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Sample records for germanium ge detectors

  1. MAJORANA Collaboration's experience with germanium detectors

    SciTech Connect

    Mertens, S.; Abgrall, N.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Cuesta, C.; Detwiler, J. A.; Efremenko, Yu; Ejiri, H.; Elliott, S. R.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; MacMullin, J.; Martin, R. D.; Meijer, S. J.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Shanks, B.; Shirchenko, M.; Snyder, N.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.

    2015-05-01

    The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  2. MAJORANA Collaboration's experience with germanium detectors

    DOE PAGESBeta

    Mertens, S.; Abgrall, N.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; et al

    2015-05-01

    The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANAmore » mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.« less

  3. Large Cryogenic Germanium Detector. Final Report

    SciTech Connect

    Mandic, Vuk

    2013-02-13

    The goal of this project was to investigate possible ways of increasing the size of cryogenic Ge detectors. This project identified two possible approaches to increasing the individual cryogenic Ge detector size. The first approach relies on using the existing technology for growing detector-grade (high-purity) germanium crystals of dislocation density 100-7000 cm{sup -2}. The second approach is to consider dislocation-free Ge crystals.

  4. Germanium detector vacuum encapsulation

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

    1991-01-01

    This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

  5. RESEARCH NOTE FROM COLLABORATION: Production and decay of the 73Ge*(1/2-) metastable state in a low-background germanium detector

    NASA Astrophysics Data System (ADS)

    Liao, H. Y.; Chang, H. M.; Chou, M. H.; Deniz, M.; Huang, H. X.; Lee, F. S.; Li, H. B.; Li, J.; Lin, C. W.; Lin, F. K.; Lin, S. K.; Lin, S. T.; Singh, V.; Wong, H. T.; Wu, S. C.; TEXONO Collaboration

    2008-07-01

    The 73Ge*(1/2-) metastable state decays with a very characteristic signature which allows it to be tagged event-by-event. Studies were performed using data taken with a high-purity germanium detector in a low-background laboratory near a nuclear power reactor core where the \\rm{\\bar{\

  6. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    NASA Technical Reports Server (NTRS)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  7. Germanium detector passivated with hydrogenated amorphous germanium

    DOEpatents

    Hansen, William L.; Haller, Eugene E.

    1986-01-01

    Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

  8. The 100 micron detector development program. [gallium doped germanium photoconductors

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1976-01-01

    An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.

  9. Electronic considerations for externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Landis, D. A.; Goulding, F. S.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Malone, D. F.; Pollard, M. J.

    1991-01-01

    The dominant background source for germanium gamma ray detector spectrometers used for some astrophysics observations is internal beta decay. Externally segmented germanium gamma ray coaxial detectors can identify beta decay by localizing the event. Energetic gamma rays interact in the germanium detector by multiple Compton interactions while beta decay is a local process. In order to recognize the difference between gamma rays and beta decay events, the external electrode (outside of detector) is electrically partitioned. The instrumentation of these external segments and the consequence with respect to the spectrometer energy signal is examined.

  10. Photon Identification with Segmented Germanium Detectors in Low Radiation Environments

    SciTech Connect

    Abt, I.; Caldwell, A.; Kroeninger, K.; Liu, J.; Liu, X.; Majorovits, B.; Stelzer, F.

    2007-03-28

    Effective identification of photon-induced events is essential for a new generation of double beta-decay experiments. One such experiment is the GERmanium Detector Array, GERDA, located at the INFN Gran Sasso National Laboratory (LNGS) in Italy. It uses germanium, enriched in 76Ge, as source and detector, and aims at a background level of less than 10-3 counts/(kg {center_dot} keV {center_dot} y) in the region of the Q{beta}{beta}-value. Highly segmented detectors are being developed for this experiment. A detailed GEANT4 Monte Carlo study about the possibilities to identify photon--induced background was published previously. An 18-fold segmented prototype detector was tested and its performance compared with Monte Carlo predictions. The detector performed well and the agreement with the Monte Carlo is excellent.

  11. Front End Spectroscopy ASIC for Germanium Detectors

    NASA Astrophysics Data System (ADS)

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  12. Isotopically modified Ge detectors for GERDA: from production to operation

    NASA Astrophysics Data System (ADS)

    Budjáš, D.; Agostini, M.; Baudis, L.; Bellotti, E.; Bezrukov, L.; Brugnera, R.; Cattadori, C.; di Vacri, A.; Falkenstein, R.; Garfagnini, A.; Georgi, S.; Grabmayr, P.; Hegai, A.; Hemmer, S.; Hult, M.; Janicskó Csáthy, J.; Kornoukhov, V.; Lehnert, B.; Lubashevskiy, A.; Nisi, S.; Pivato, G.; Schönert, S.; Tarka, M.; von Sturm, K.

    2013-04-01

    The GERDA experiment searches for the neutrinoless double beta (0νββ) decay of 76Ge using high-purity germanium detectors made of material enriched in 76Ge. For Phase II of the experiment a sensitivity for the half life T1/20ν ~ 2·1026 yr is envisioned. Modified Broad Energy Germanium detectors (BEGe) with thick n+ electrodes provide the capability to efficiently identify and reject background events, while keeping a large acceptance for the 0νββ-decay signal through novel pulse-shape discrimination (PSD) techniques. The viability of producing thick-window BEGe-type detectors for the GERDA experiment is demonstrated by testing all the production steps from the procurement of isotopically modified germanium up to working BEGe detectors. Comprehensive testing of the spectroscopic as well as PSD performance of the GERDA Phase II prototype BEGe detectors proved that the properties of these detectors are identical to those produced previously from natural germanium material following the standard production line of the manufacturer. Furthermore, the production of BEGe detectors from a limited amount of isotopically modified germanium served to optimize the production, in order to maximize the overall detector mass yield. The results of this test campaign provided direct input for the subsequent production of the enriched germanium detectors.

  13. Germanium: From Its Discovery to SiGe Devices

    SciTech Connect

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  14. Proton-induced radiation damage in germanium detectors

    SciTech Connect

    Bruckner, J.; Korfer, M.; Wanke, H. , Mainz ); Schroeder, A.N.F. ); Figes, D.; Dragovitsch, P. ); Englert, P.A.J. ); Starr, R.; Trombka, J.I. . Goddard Space Flight Center); Taylor, I. ); Drake, D.M.; Shunk, E.R. )

    1991-04-01

    High-purity germanium (HPGe) detectors will be used in future space missions for gamma-ray measurements and will be subject to interactions with energetic particles. To simulate this process several large-volume n-type HPGe detectors were incrementally exposed to a particle fluence of up to 10{sub 8} protons cm{sup {minus}2} (proton energy: 1.5 GeV) at different operating temperatures (90 to 120 K) to induce radiation damage. Basic scientific as well as engineering data on detector performance were collected. During the incremental irradiation, the peak shape produced by the detectors showed a significant change from a Gaussian shape to a broad complex structure. After the irradiation all detectors were thoroughly characterized by measuring many parameters. To remove the accumulated radiation damage the detectors were stepwise annealed at temperatures T {le} 110{degrees}C while staying specially designed cryostats. This paper shows that n-type HPGe detectors can be used in charged particles environments as high-energy resolution devices until a certain level of radiation damage is accumulated and that the damage can be removed at moderate annealing temperatures and the detector returned to operating condition.

  15. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    NASA Astrophysics Data System (ADS)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  16. HEROICA: an underground facility for the fast screening of germanium detectors

    NASA Astrophysics Data System (ADS)

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  17. Germanium Detectors in Homeland Security at PNNL

    SciTech Connect

    Stave, Sean C.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADES HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.

  18. Germanium detectors in homeland security at PNNL

    DOE PAGESBeta

    Stave, S.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADESmore » HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.« less

  19. Germanium detectors in homeland security at PNNL

    SciTech Connect

    Stave, S.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADES HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.

  20. High bit rate germanium single photon detectors for 1310nm

    NASA Astrophysics Data System (ADS)

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  1. Why compton-suppressed germanium detector arrays?

    SciTech Connect

    Diamond, R.M.

    1993-10-01

    Nuclear spectroscopic studies have provided a strong incentive to obtain {gamma}-ray detectors with increasingly better energy resolution, higher full-energy peak efficiencies, and greater sensitivity or resolving power. A major step was the introduction of Ge detectors in the early 60`s. But because of the low atomic number of Ge they have a poor response function; a majority of interacting gamma rays of moderate energy Compton scatter out of the detector leaving a large low-energy background. The remedy was to add a Compton-suppression shield made of NaI around the Ge crystal, and if interactions occurred simultaneously in the NaI scintillator and in the Ge detector to veto that event. Efficiencies also increased greatly when an English-Danish collaboration assembled five Ge detectors, each with a NaI suppressor, into the first array at the end of 1980. Obviously, a system of five such detectors gave much better statistics than the usual two bare detectors used for obtaining coincidence data (by a factor of 10). A few years later, another major improvement came with replacement of the NaI suppressors with shields made of the much denser bismuth germanate (BGO) as scintillator, as these could be thinner leading to arrays with of order 20 detectors. Use of such a large number of detectors led to the realization that for cascades of coincident gamma rays, as in going down a band, the improvement in the peak/background ratio observed and already appreciated in going from singles spectra to gated (double-) coincidence spectra continued when doubly-gated triple-coincidence data were compared for the first time to singly-gated double-coincidence ones. The higher-gated spectra were much cleaner and more selective, though with poorer statistics, and the advantages of higher folds and efficiencies led to the proposals for the larger 4{pi} arrays of today, Eurogam and GASP in Europe and Gammasphere in the U.S.

  2. Germanium Detector Crystal Axis Orientation for the MAJORANA Demonstrator

    NASA Astrophysics Data System (ADS)

    Letourneau, Hannah

    2013-10-01

    The MAJORANA Demonstrator, currently being constructed at Sanford Underground Research Facility in Lead, South Dakota, is an array of germanium detectors which will be used to search for neutrinoless double beta decay, which would demonstrate that neutrinos have a Majorana mass term and lepton number is not conserved. An important characteristic of semiconductor detectors is the crystal axis orientation, because the propagation of electromagnetic signals is attenuated by the location of the interaction relative to the axis of the crystal. Conventionally, a goniometer is used to position a collimated low energy gamma source in many small increments around the detector to measure the rise time at each position. However, due to physical constraints from the casing of the Demonstrator, a different method must be developed. At the University of Washington this summer, I worked with a 76 Ge point-contact detector. I found the crystal axis orientation first with Americium 241, a lower energy gamma source. Then, I used a higher energy source, Thorium 232, in conjunction with the only a few angular reference points to also calculate rise time. Also, I wrote code to process the data. The success of this method will be evaluated and discussed. NSF

  3. Characterisation of a Broad Energy Germanium (BEGe) detector

    NASA Astrophysics Data System (ADS)

    Barrientos, D.; Boston, A. J.; Boston, H. C.; Quintana, B.; Sagrado, I. C.; Unsworth, C.; Moon, S.; Cresswell, J. R.

    2011-08-01

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of 241Am, 22Na and 137Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  4. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  5. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    NASA Astrophysics Data System (ADS)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  6. A Segmented, Enriched N-type Germanium Detector for Neutrinoless Double Beta-Decay Experiments

    SciTech Connect

    Leviner, L.; Aalseth, Craig E.; Ahmed, M. W.; Avignone, F. T.; Back, Henning O.; Barabash, Alexander S.; Boswell, M.; De Braeckeleer, L.; Brudanin, V.; Chan, Yuen-Dat; Egorov, Viatcheslav; Elliott, Steven R.; Gehman, Victor M.; Hossbach, Todd W.; Kephart, Jeremy; Kidd, M. F.; Konovalov, S.; Lesko, Kevin; Li, Jingyi; Mei, Dongming; Mikhailov, S.; Miley, Harry S.; Radford, D. C.; Reeves, James H.; Sandukovsky, Viatcheslav; Umatov, Valdimir; Underwood, T. A.; Tornow, W.; Wu, Y. K.; Young, A.

    2014-01-21

    We present data characterizing the performance of the _rst segmented, N- type Ge detector, isotopically enriched to 85% 76Ge. This detector, based on the Ortec PT6x2 design and referred to as SEGA (Segmented, Enriched Germanium Assembly), was developed as a possible prototype for neutrinoless double beta-decay measurements by the Majorana collaboration. We present some of the general characteristics (including bias potential, efficiency, leakage current, and integral cross-talk) for this detector in its temporary cryostat. We also present an analysis of the resolution of the detector, and demonstrate that for all but two segments there is at least one channel that reaches the Majorana resolution goal below 4 keV FWHM at 2039 keV, and all channels are below 4.5 keV FWHM.

  7. Active noise canceling system for mechanically cooled germanium radiation detectors

    DOEpatents

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  8. Ultra-low noise mechanically cooled germanium detector

    NASA Astrophysics Data System (ADS)

    Barton, P.; Amman, M.; Martin, R.; Vetter, K.

    2016-03-01

    Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose energy thresholds are limited by electronic noise. In this paper, methods are presented which can lower the electronic noise of these detectors. Through ultra-low vibration mechanical cooling and wire bonding of a CMOS charge sensitive preamplifier to a sub-pF p-type point contact HPGe detector, we demonstrate electronic noise levels below 40 eV-FWHM.

  9. Comparison of Germanium Telluride (GeTe) Crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Comparison of Germanium Telluride (GeTe) Crystals grown on Earth (left) and in space (right) during the Skylab SL-3 mission. These crystals were grown using a vapor transport crystal growth method in the Multipurpose Electric Furnace System (MEFS). Crystals grown on earth are needles and platelettes with distorted surfaces and hollow growth habits. The length of the ground-based needle is approximately 2 mm and the average lenth of the platelets is 1 mm. The dull appearance of the Skylab crystals resulted from condensation of the transport agent during the long cooling period dictated by the Skylab furnace. In a dedicated process, this would be prevented by removing the ampoule from the furnace and quenching the vapor source.

  10. Ge-rich silicon germanium as a new platform for optical interconnects on silicon

    NASA Astrophysics Data System (ADS)

    Vakarin, Vladyslav; Chaisakul, Papichaya; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Coudevylle, Jean Rene; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2016-05-01

    We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si1-xGex guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.

  11. Astroparticle physics with a customized low-background broad energy Germanium detector

    SciTech Connect

    Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

    2011-10-01

    The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  12. Characterisation of the SmartPET planar Germanium detectors

    NASA Astrophysics Data System (ADS)

    Boston, H. C.; Boston, A. J.; Cooper, R. J.; Cresswell, J.; Grint, A. N.; Mather, A. R.; Nolan, P. J.; Scraggs, D. P.; Turk, G.; Hall, C. J.; Lazarus, I.; Berry, A.; Beveridge, T.; Gillam, J.; Lewis, R.

    2007-08-01

    Small Animal Reconstruction PET (SmartPET) is a project funded by the UK medical research council (MRC) to demonstrate proof of principle that Germanium can be utilised in Positron Emission Tomography (PET). The SmartPET demonstrator consists of two orthogonal strip High Purity Germanium (HPGe) planar detectors manufactured by ORTEC. The aim of the project is to produce images of an internal source with sub mm 3 spatial resolution. Before this image can be achieved the detectors have to be fully characterised to understand the response at any given location to a γ-ray interaction. This has been achieved by probing the two detectors at a number of specified points with collimated sources of various energies and strengths. A 1 mm diameter collimated beam of photons was raster scanned in 1 mm steps across the detector. Digital pulse shape data were recorded from all the detector channels and the performance of the detector for energy and position determination has been assessed. Data will be presented for the first SmartPET detector.

  13. A position-sensitive germanium detector for gamma-ray astronomy

    NASA Technical Reports Server (NTRS)

    Varnell, L. S.; Ling, J. C.; Mahoney, W. A.; Jacobson, A. S.; Pehl, R. H.; Goulding, F. S.; Landis, D. A.; Luke, P. N.; Madden, N. W.

    1984-01-01

    The critical problem in high-resolution cosmic gamma-ray spectroscopy in the energy range from 0.02 to 10 MeV is the limited spectral sensitivity of the detectors used. This results from the small effective area of the detectors and the high background noise due to induced radioactivity and scattering in the detectors' high-energy particle environment. The effective area can be increased by increasing the number of detectors, but this becomes prohibitive because of the size and expense of the resulting instrument. We have taken a new approach: a segmented large-volume germanium gamma-ray detector which can effectively discriminate against internal background yet maintain the high spectral resolution and efficiency of conventional coaxial Ge detectors. To verify this concept, a planar detector divided into two segments has been fabricated and laboratory measurements agree well with Monte Carlo calculations. A large coaxial detector which will be divided into five segments is being built using the techniques developed for the planar detector. Monte Carlo calculations show that the sensitivity (minimum detectable flux) of the segmented coaxial detector is a factor of 2-3 better than conventional detectors because of the reduction in the internal background.

  14. An experimental characterisation of a Broad Energy Germanium detector

    NASA Astrophysics Data System (ADS)

    Harkness-Brennan, L. J.; Judson, D. S.; Boston, A. J.; Boston, H. C.; Colosimo, S. J.; Cresswell, J. R.; Nolan, P. J.; Adekola, A. S.; Colaresi, J.; Cocks, J. F. C.; Mueller, W. F.

    2014-10-01

    The spectroscopic and charge collection performance of a BE2825 Broad Energy Germanium (BEGe) detector has been experimentally investigated. The efficiency and energy resolution of the detector have been measured as a function of energy and the noise contributions to the preamplifier signal have been determined. Collimated gamma-ray sources mounted on an automated 3-axis scanning table have been used to study the variation in preamplifier signal shape with gamma-ray interaction position in the detector, so that the position-dependent charge collection process could be characterised. A suite of experimental measurements have also been undertaken to investigate the performance of the detector as a function of bias voltage and we report on anomalous behaviour observed when the detector was operating close to the depletion voltage.

  15. New segmented p-type germanium detector for neutrino-less double-beta decay

    NASA Astrophysics Data System (ADS)

    King, George Savage, III

    Neutrino-less double-beta decay (0nubetabetabeta - decay) has been selected by the American Physical Society Joint Study of Neutrino Physics, and by the Neutrino Science Advisory Group (NUSAG) as a top priority for consideration by the National Science Foundation and the US Department of Energy. The proposed Majorana 76Ge experiment was recommended as one of the two top projects in the US. It involves five US National Laboratories, nine universities, two Russian Institutes, and two Canadian Institutes. The experiment involves ultra-low background segmented germanium detectors of Ge enriched to 86% in 76Ge. Segmented Ge detectors have always been made from n-type germanium. Accordingly they are very expensive and have a production rate far too low to satisfy the Majorana construction schedule. This research project was successful in designing and producing the first five-segment p-type detector and test cryostat. Experiments performed in our laboratory have produced data that document that the segmentation is superior to the n-type segmented test detector specially made for the Majorana project, while the cost was lower and the production time was shorter. This type of detector is now one of several options for the Majorana experiment detector array modules. Neutrino-less double-beta decay is the only practical way to determine if neutrinos are their own anti particles, and if so the most sensitive way by far to determine the neutrino mass scale. The theoretical issues in neutrino physics and double-beta decay are discussed, the status of the experimental programs is given, as well as a description of the technology for the development of p-type segmented Ge detectors. Data documenting the efficacy of this detector in rejecting background is presented. Whether or not this option is chosen for the Majorana project, this development will be very useful in many projects in particle-astrophysics, nuclear physics, nuclear chemistry, and in national security. The detector

  16. Germanium blocked impurity band far infrared detectors

    NASA Astrophysics Data System (ADS)

    Rossington, Carolyn Sally

    1988-04-01

    The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the Star Wars nuclear defense scheme proposed by the Reagan administration.

  17. Germanium blocked impurity band far infrared detectors

    SciTech Connect

    Rossington, C.S.

    1988-04-01

    The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration.

  18. Evaluation of neutron background in cryogenic Germanium target for WIMP direct detection when using reactor neutrino detector as neutron veto

    NASA Astrophysics Data System (ADS)

    Xu, Ye; Lan, Jieqin; Bai, Ying; Gao, Weiwei

    2016-09-01

    A direct WIMP (Weakly Interacting Massive Particle) detector with a neutron veto system is designed to better reject neutrons. An experimental configuration is studied in the present paper: 984 Ge modules are placed inside a reactor neutrino detector. In order to discriminate between nuclear and electron recoil, both ionization and heat signatures are measured using cryogenic germanium detectors in this detection. The neutrino detector is used as a neutron veto device. The neutron background for the experimental design has been estimated using the Geant4 simulation. The results show that the neutron background can decrease to O(0.01) events per year per tonne of high purity Germanium. We calculate the sensitivity to spin-independent WIMP-nucleon elastic scattering. An exposure of one tonne × year could reach a cross-section of about 2×10-11 pb.

  19. An aeronomical application of a germanium near infrared (NIR) detector

    SciTech Connect

    Noto, J.; Kerr, R.B.; Rudy, R.J.; Williams, R.; Hecht, J.H.

    1994-12-31

    A collaboration between Boston University and the Aerospace corporation has resulted in a germanium based detector used in conjunction with an infrared optimized Fabry-Perot spectrometer. Gold plated mirrors were installed and the appropriate transmissive optics are used in the Fabry-Perot to optimize the NIR transmission. The detector is a germanium PIN diode coated with a layer of silicon-nitride. Current produced by the detector is measured by using a Capacitive Trans-Impedance Amplifier (CITA). An A/D converter samples the amplified capacitor voltage and outputs a 12 bit word that is then passed on to the controlling computer system. The detector, amplifier, and associated electronics are mounted inside a standard IR dewar and operated at 77 K. The authors have operated this detector and spectrometer system at Millstone Hill for about 6 months. Acceptable noise characteristics, a NEP of 10{sup {minus}17} watts, and a QE of 90% at 1.2 {micro}m, have been achieved with an amplifier gain of 200. The system is currently configured for observations of thermospheric helium, and has made the first measurement of the He 10,830 {angstrom} nightglow emission isolated from OH contamination. In an effort to both increase the sensitivity of the Fabry-Perot in the visible and to adapt it for planetary astronomy the authors have entered into a collaboration with CIDTEC. A Charge Injection Detector or CID has some unique capabilities that distinguish it from a CCD and the authors are evaluating it as a detector for the Hadinger fringe pattern produced by a Fabry-Perot. The CID allows non-destructive readout and random access of individual pixels with in the entire frame, this allows for both ``electronic masking`` of bright objects and allows each fringe to be observed without having to readout a large number of dark pixels.

  20. Characteristics of GRIFFIN high-purity germanium clover detectors

    NASA Astrophysics Data System (ADS)

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  1. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    minimizing charge injection leakage current, increasing the long-term stability of the contacts, and achieving good charge collection properties in segmented detectors. A systematic study of contact characteristics is presented where amorphous germanium (a-Ge) and amorphous silicon (a-Si) contacts are sputtered with varying sputter gas hydrogen content, sputter gas pressure, and amorphous film thickness. A set of about 45 detectors fabricated from 11 different crystal samples were analyzed for electron barrier height and effective Richardson constant. Most of these detectors were subjected to as many as 10 temperature cycles over a period of up to several months in order to assess their long-term stability. Additionally, 6 double-sided strip detectors were fabricated with a-Ge and a-Si contacts in order to study their inter-electrode charge collection properties. An attempt is made to relate fabrication process parameters such as hydrogen content, sputter pressure, and film thickness to changes observed in detector performance and assess the level of reproducibility using the current methods. Several important results and conclusions were found that enable more reliable and highly performing detectors with amorphous semiconductor contacts. Utilizing the new information should enable consistent production of finely segmented detectors with excellent energy resolution that can be operated reliably for a long period of time. The passivation process could impact planar detectors as well as other designs, such as the p-type point contact detector. It is demonstrated that the long-term stability of amorphous semiconductor contacts is primarily dependent on the time the detector is at room temperature rather than the number of temperature cycles. For a-Ge contacts, higher sputter pressure yields a more stable process that changes little with time, giving a reliable hole-blocking contact. The a-Si contacts form a good electron-blocking contact with decreasing leakage current over

  2. Intrinsic germanium detector used in borehole sonde for uranium exploration

    USGS Publications Warehouse

    Senftle, F.E.; Moxham, R.M.; Tanner, A.B.; Boynton, G.R.; Philbin, P.W.; Baicker, J.A.

    1976-01-01

    A borehole sonde (~1.7 m long; 7.3 cm diameter) using a 200 mm2 planar intrinsic germanium detector, mounted in a cryostat cooled by removable canisters of frozen propane, has been constructed and tested. The sonde is especially useful in measuring X- and low-energy gamma-ray spectra (40–400 keV). Laboratory tests in an artificial borehole facility indicate its potential for in-situ uranium analyses in boreholes irrespective of the state of equilibrium in the uranium series. Both natural gamma-ray and neutron-activation gamma-ray spectra have been measured with the sonde. Although the neutron-activation technique yields greater sensitivity, improvements being made in the resolution and efficiency of intrinsic germanium detectors suggest that it will soon be possible to use a similar sonde in the passive mode for measurement of uranium in a borehole down to about 0.1% with acceptable accuracy. Using a similar detector and neutron activation, the sonde can be used to measure uranium down to 0.01%.

  3. Evaluating a new segmented germanium detector contact technology

    NASA Astrophysics Data System (ADS)

    Jackson, E. G.; Lister, C. J.; Chowdhury, P.; Hull, E.; Pehl, R.

    2012-10-01

    New technologies for making gamma ray detectors position sensitive have many applications in space science, medical imaging, homeland security, and in nuclear structure research. One promising approach uses high-purity germanium wafers with the planar surfaces segmented into orthogonal strip patterns forming a Double-Sided Strip Detector (DSSD). The combination of data from adjoining strips, or pixels, is physics-rich for Compton image formation and polarization studies. However, sensitivity to charge loss and various kinds of cross-talk [1] have limited the usefulness of first generation devices. We are investigating new contact technologies, developed by PhDs Co [2], based on amorphous-germanium and yttrium contacts RF sputter deposited to a thickness of ˜ 1000 å. New techniques allow both physical and photolithographic segmentation of the contacts with inter-strip gap widths of 0.25 mm. These modifications should improve all aspects of charge collection. The new detector technology employs the same material and fabrication technique for both the n- and p- contacts, thus removing artificial asymmetry in the data. Results from tests of cross-talk, charge collection, and scattering asymmetry will be presented and compared with older technologies. This mechanically cooled counter, NP-7, seems to represent a breakthrough.[4pt] [1] S. Gros et al., Nucl. Inst. Meth. A 602, 467 (2009).[0pt] [2] E. Hull et al Nucl Inst Meth A 626, 39 (2011)

  4. Germanium

    SciTech Connect

    Major-Sosias, M.A.

    1996-01-01

    Germanium is an important semiconductor material, or metalloid which, by definition, is a material whose electrical properties are halfway between those of metallic conductors and electrical insulators. This paper describes the properties, sources, and market for germanium.

  5. SU-C-201-02: Quantitative Small-Animal SPECT Without Scatter Correction Using High-Purity Germanium Detectors

    SciTech Connect

    Gearhart, A; Peterson, T; Johnson, L

    2015-06-15

    Purpose: To evaluate the impact of the exceptional energy resolution of germanium detectors for preclinical SPECT in comparison to conventional detectors. Methods: A cylindrical water phantom was created in GATE with a spherical Tc-99m source in the center. Sixty-four projections over 360 degrees using a pinhole collimator were simulated. The same phantom was simulated using air instead of water to establish the true reconstructed voxel intensity without attenuation. Attenuation correction based on the Chang method was performed on MLEM reconstructed images from the water phantom to determine a quantitative measure of the effectiveness of the attenuation correction. Similarly, a NEMA phantom was simulated, and the effectiveness of the attenuation correction was evaluated. Both simulations were carried out using both NaI detectors with an energy resolution of 10% FWHM and Ge detectors with an energy resolution of 1%. Results: Analysis shows that attenuation correction without scatter correction using germanium detectors can reconstruct a small spherical source to within 3.5%. Scatter analysis showed that for standard sized objects in a preclinical scanner, a NaI detector has a scatter-to-primary ratio between 7% and 12.5% compared to between 0.8% and 1.5% for a Ge detector. Preliminary results from line profiles through the NEMA phantom suggest that applying attenuation correction without scatter correction provides acceptable results for the Ge detectors but overestimates the phantom activity using NaI detectors. Due to the decreased scatter, we believe that the spillover ratio for the air and water cylinders in the NEMA phantom will be lower using germanium detectors compared to NaI detectors. Conclusion: This work indicates that the superior energy resolution of germanium detectors allows for less scattered photons to be included within the energy window compared to traditional SPECT detectors. This may allow for quantitative SPECT without implementing scatter

  6. Automation of the Characterization of High Purity Germanium Detectors

    NASA Astrophysics Data System (ADS)

    Dugger, Charles ``Chip''

    2014-09-01

    Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of the detectors must be characterized. A robotic arm is being tested for future calibration of HPGe detectors. The arm will hold a source at locations relative to the crystal while data is acquired. Several radioactive sources of varying energy levels will be used to determine the characteristics of the crystal. In this poster, I will present our work with the robot, as well as the characterization of data we took with an underground HPGe detector at the WIPP facility in Carlsbad, NM (2013). Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of

  7. Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

    NASA Technical Reports Server (NTRS)

    Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

    1997-01-01

    A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

  8. (Data acquisition for Ge detector arrays)

    SciTech Connect

    Hensley, D.C.

    1989-10-09

    The traveler presented three invited lectures entitled An Overview of Data Acquisition for Ge Detector Arrays,'' Specialized Data Acquisition for Ge Detector Arrays,'' and Gamma-Ray Angular Correlations from Heavy-Ion Inelastic Scattering Measured in the Spin Spectrometer'' and acted as a Study Group Coordinator at the Nuclear Structure in the Era of New Spectroscopy Workshop in Copenhagen, Denmark.

  9. Mechanically Cooled Large-Volume Germanium Detector Systems for Nuclear Explosion Monitoring

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.; Bowyer, Ted W.

    2006-09-21

    Compact maintenance free mechanical cooling systems are being developed to operate large volume (~570 cm3, ~3 kg, 140% or larger) germanium detectors for field applications. We are using a new generation of Stirling-cycle mechanical coolers for operating the very largest volume germanium detectors with absolutely no maintenance or liquid nitrogen requirements. The user will be able to leave these systems unplugged on the shelf until needed. The flip of a switch will bring a system to life in ~1 hour for measurements. The maintenance-free operating lifetime of these detector systems will exceed five years. These features are necessary for remote long-duration liquid-nitrogen free deployment of large-volume germanium gamma-ray detector systems for Nuclear Explosion Monitoring (NEM). The Radionuclide Aerosol Sampler/Analyzer (RASA) will greatly benefit from the availability of such detectors by eliminating the need for liquid nitrogen at RASA sites while still allowing the very largest available germanium detectors to be utilized. These mechanically cooled germanium detector systems being developed here will provide the largest, most sensitive detectors possible for use with the RASA. To provide such systems, the appropriate technical fundamentals are being researched. Mechanical cooling of germanium detectors has historically been a difficult endeavor. The success or failure of mechanically cooled germanium detectors stems from three main technical issues: temperature, vacuum, and vibration. These factors affect one another. There is a particularly crucial relationship between vacuum and temperature. These factors will be experimentally studied both separately and together to insure a solid understanding of the physical limitations each factor places on a practical mechanically cooled germanium detector system for field use. Using this knowledge, a series of mechanically cooled germanium detector prototype systems are being designed and fabricated. Our collaborators

  10. Measurement of Compton scattering in phantoms by germanium detectors

    SciTech Connect

    Zasadny, K.R.; Koral, K.F. . Medical Center); Floyd, C.E. Jr.; Jaszczak, R.J. . Dept. of Radiology)

    1990-04-01

    Quantitative Anger-camera tomography requires correction for Compton scattering. The Anger camera spectral-fitting technique can measure scatter fractions at designated positions in an image allowing for correction. To permit verification of those measurements for {sup 131}I, the authors have determined scatter fractions with a high-purity germanium (HPGe) detector and various phantom configurations. The scatter fraction values for {sup 99m}Tc were also measured and are compared to results from Monte Carlo simulation. The phantom consisted of a 22.2 cm diameter {times} 18.6 cm high cylinder filled with water and a 6 cm diameter water-filled sphere placed at various locations inside the cylinder. Radioisotope is added to either the sphere or the cylinder. The source is collimated by an Anger camera collimator and the active area of the HPGe detector is defined by a 0.6 cm diameter hole in a lead shielding mask. Corrections include accounting for the HPGe detector efficiency as a function of gamma-ray energy, the finite energy resolution of detector and the HPGe detector energy resolution compared to that for a NaI(Tl) Anger camera.

  11. Strip interpolation in silicon and germanium strip detectors.

    SciTech Connect

    Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

    2004-01-01

    The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM.

  12. Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

    SciTech Connect

    Bandaru, Jordana

    2001-05-12

    Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 10{sup 13} cm{sup -3}) approximately 1 mm thick grown on a heavily doped active layer ({approx} 10{sup 16} cm{sup -3}) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02{sup o} and 10{sup o} from the {l_brace}111{r_brace} toward the {l_brace}100{r_brace}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained {approx}10{sup 15} cm{sup -3} phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to {approx} 10{sup 14} cm{sup -3} but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ({approx}10{sup 16} cm{sup -3}) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ({approx}6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface

  13. A repair station for HpGe detectors

    NASA Astrophysics Data System (ADS)

    Shearman, Robert; Lister, Christopher; Mitchell, A. J.; Copp, Patrick; Jepeal, Steven; Chowdhury, Partha

    2013-10-01

    Hyper-pure Germanium detectors (HpGe) offer the highest energy resolution for gamma-ray nuclear spectroscopy (about 1.5 keV @ 1 MeV), and are used in all the world's leading detector arrays such as GammaSphere, AGATA and GRETINA. The detector crystals are operated in cryostats at 100 K to reduce thermal noise. To maintain low leakage current and low operating temperatures, cryostat hygiene is very important. Detectors must be regularly maintained by using a high-vacuum, oil-free annealing station. At elevated temperatures above 373 K the process of pumping and baking can also anneal away neutron damage to the detector crystals. This poster will show the design and building of a new HpGe repair station at U. Mass Lowell, and make comparisons of results obtained from this new station to the Gammasphere annealing factory at Argonne. This research is funded by the DOE National Nuclear Safety Administration and the Office of Science.

  14. Mechanically Cooled Large-Volume Germanium Detector Systems for Nuclear Explosion Monitoring DOENA27323-1

    SciTech Connect

    Hull, E.L.

    2006-07-28

    Compact maintenance free mechanical cooling systems are being developed to operate large volume germanium detectors for field applications. To accomplish this we are utilizing a newly available generation of Stirling-cycle mechanical coolers to operate the very largest volume germanium detectors with no maintenance. The user will be able to leave these systems unplugged on the shelf until needed. The flip of a switch will bring a system to life in ~ 1 hour for measurements. The maintenance-free operating lifetime of these detector systems will exceed 5 years. These features are necessary for remote long-duration liquid-nitrogen free deployment of large-volume germanium gamma-ray detector systems for Nuclear Explosion Monitoring. The Radionuclide Aerosol Sampler/Analyzer (RASA) will greatly benefit from the availability of such detectors by eliminating the need for liquid nitrogen at RASA sites while still allowing the very largest available germanium detectors to be reliably utilized.

  15. Mechanically Cooled Large-Volume Germanium Detector Systems for Neclear Explosion Monitoring DOENA27323-2

    SciTech Connect

    Hull, E.L.

    2006-10-30

    Compact maintenance free mechanical cooling systems are being developed to operate large volume high-resolution gamma-ray detectors for field applications. To accomplish this we are utilizing a newly available generation of Stirling-cycle mechanical coolers to operate the very largest volume germanium detectors with no maintenance. The user will be able to leave these systems unplugged on the shelf until needed. The maintenance-free operating lifetime of these detector systems will exceed 5 years. Three important factors affect the operation of mechanically cooled germanium detectors: temperature, vacuum, and vibration. These factors will be studied in the laboratory at the most fundamental levels to insure a solid understanding of the physical limitations each factor places on a practical mechanically cooled germanium detector system. Using this knowledge, mechanically cooled germanium detector prototype systems will be designed and fabricated.

  16. HEROICA: A fast screening facility for the characterization of germanium detectors

    NASA Astrophysics Data System (ADS)

    Andreotti, Erica; Gerda Collaboration

    2013-08-01

    In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

  17. HEROICA: A fast screening facility for the characterization of germanium detectors

    SciTech Connect

    Andreotti, Erica; Collaboration: GERDA Collaboration

    2013-08-08

    In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

  18. Charged Particle Induced Radiation damage of Germanium Detectors in Space: Two Mars Observer Gamma-Ray Detectors

    NASA Technical Reports Server (NTRS)

    Bruekner, J.; Koenen, M.; Evans, L. G.; Starr, R.; Bailey, S. H.; Boynton W. V.

    1997-01-01

    The Mars Observer Gamma-Ray Spectrometer (MO GRS) was designed to measure gamma-rays emitted by the Martian surface. This gamma-ray emission is induced by energetic cosmic-ray particles penetrating the Martian surface and producing many secondary particles and gamma rays. The MO GRS consisted of an high-purity germanium (HPGe) detector with a passive cooler. Since radiation damage due to permanent bombardment of energetic cosmic ray particles (with energies up to several GeV) was expected for the MO GRS HPGe crystal, studies on radiation damage effects of HPGe crystals were carried on earth. One of the HPGe crystals (paradoxically called FLIGHT) was similar to the MO GRS crystal. Both detectors, MO GRS and FLIGHT, contained closed-end coaxial n-type HPGe crystals and had the same geometrical dimensions (5.6 x 5.6 cm). Many other parameters, such as HV and operation temperature, differed in space and on earth, which made it somewhat difficult to directly compare the performance of both detector systems. But among other detectors, detector FLIGHT provided many useful data to better understand radiation damage effects.

  19. High-energy proton radiation damage of high-purity germanium detectors

    NASA Technical Reports Server (NTRS)

    Pehl, R. H.; Varnell, L. S.; Metzger, A. E.

    1978-01-01

    Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

  20. Development of a new type of germanium detector for dark matter searches

    NASA Astrophysics Data System (ADS)

    Wei, Wenzhao

    Monte Carlo simulation is an important tool used to develop a better understanding of important physical processes. This thesis describes three Monte Carlo simulations used to understand germanium detector response to low energy nuclear recoils and radiogenic backgrounds for direct dark matter searches. The first simulation is the verification of Barker-Mei model, a theoretical model for calculating the ionization efficiency for germanium detector for the energy range of 1 - 100 keV. Utilizing the shape analysis, a bin-to-bin comparison between simulation and experimental data was performed for verifying the accuracy of the Barker-Mei model. A percentage difference within 4% was achieved between data and simulation, which showed the validity of the Barker-Mei model. The second simulation is the study of a new type of germanium detector for n/gamma discrimination at 77 K with plasma time difference in pulse shape. Due to the poor time resolution, conventional P-type Point Contact (PPC) and coaxial germanium detectors are not capable of discriminating nuclear recoils from electron recoils. In this thesis, a new idea of using great detector granularity and plasma time difference in pulse shape to discriminate nuclear recoils from electron recoils with planar germanium detectors in strings was discussed. The anticipated sensitivity of this new detector array is shown for detecting dark matter. The last simulation is a study of a new type of germanium-detector array serving as a PMT screening facility for ultra-low background dark matter experiments using noble liquid xenon as detector material such LUX/LZ and XENON100/XENON1T. A well-shaped germanium detector array and a PMT were simulated to study the detector response to the signal and background for a better understanding of the radiogenic gamma rays from PMTs. The detector efficiency and other detector performance were presented in this work.

  1. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    SciTech Connect

    Oshima, Yasuhiro; Sun, Yun; Kuzum, Duygu; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  2. Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

    PubMed

    Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

    2014-12-01

    Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

  3. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    NASA Astrophysics Data System (ADS)

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  4. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  5. GeGI (Germanium Gamma Imager) Performance: Maritime Interdiction Operation

    SciTech Connect

    Dreyer, Jonathan G.; Burks, Morgan T.; Trombino, Dave

    2014-09-23

    The Gamma Ray Imager (GeGI) was demonstrated during the Maritime Interdiction Operation at Point Alameda, the site of the former Naval Air Station, in Alameda, CA. During this exercise GeGI was used to localize sources within an abandoned building and a cargo ship, the Admiral Callaghan.

  6. A Germanium Detector with Optimized Compton Veto for High Sensitivity at Low Energy

    SciTech Connect

    Friedrich, S

    2011-11-30

    We have built a prototype germanium detector with a Compton veto that is optimized for high sensitivity in the low-energy range around {approx}100 keV. It is specifically designed to address the problem to directly detect plutonium gamma emissions in spent nuclear fuel by non-destructive assay. This is not possible with current detectors due to the large low-energy background of Compton-scattered high-energy radiation from the fission products, whose gamma flux is at least 6 to 7 orders of magnitude higher than the Pu signal. Our instrument is designed to assess the feasibility to selectively suppress the background in the low-energy region around {approx}100 keV with the strongest Pu X-ray and gamma emissions lines. It employs a thin Ge detector with a large Compton veto directly behind it to suppress the background from forward-scattered radiation by anti-coincidence vetoing. This report summarizes the design considerations and the performance of the instrument.

  7. Neutron energy determination with a high-purity germanium detector

    NASA Technical Reports Server (NTRS)

    Beck, Gene A.

    1992-01-01

    Two areas that are related to planetary gamma-ray spectrometry are investigated. The first task was the investigation of gamma rays produced by high-energy charged particles and their secondaries in planetary surfaces by means of thick target bombardments. The second task was the investigation of the effects of high-energy neutrons on gamma-ray spectral features obtained with high-purity Ge-detectors. For both tasks, as a function of the funding level, the experimental work was predominantly tied to that of other researchers, whenever there was an opportunity to participate in bombardment experiments at large or small accelerators for charged particles.

  8. Extrinsic germanium blocked-impurity-band detector arrays

    NASA Astrophysics Data System (ADS)

    Watson, Dan M.

    1993-07-01

    The progress of a program to develop Ge:Ga blocked-impurity-band (BIB) detector arrays for far-infrared space astronomy is reviewed. So far, the best devices, working in the 80 - 200 micrometers range, have responsive quantum efficiency better than 15%, detective quantum efficiency 10%, dark current 100 electrons s(superscript -1), and response uniformity better than a few percent. Structures with both bulk absorbers and epitaxial absorbing layers have been studied, as well as a variety of surface passivation. Front-illuminated arrays as large as 6 X 6, with 0.5 mm pixels, have been fabricated. Present performance conforms very well to the standard model of BIB detector operation. Further improvements in quantum efficiency and dark current, and larger formats, are anticipated, and the devices may play an important role in several upcoming far-infrared astronomical experiments.

  9. Radium needle used to calibrate germanium gamma-ray detector.

    PubMed

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  10. Conceptual design of a hybrid Ge:Ga detector array

    NASA Technical Reports Server (NTRS)

    Parry, C. M.

    1984-01-01

    For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

  11. Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems

    NASA Astrophysics Data System (ADS)

    Shafique, Atia; Durmaz, Emre C.; Cetindogan, Barbaros; Yazici, Melik; Kaynak, Mehmet; Kaynak, Canan B.; Gurbuz, Yasar

    2016-05-01

    This paper presents the design, modelling and simulation results of silicon/silicon-germanium (Si/SiGe) multi-quantum well based bolometer detector for uncooled infrared imaging system. The microbolometer is designed to detect light in the long wave length infrared (LWIR) range from 8 to 14 μm with pixel size of 25 x 25 μm. The design optimization strategy leads to achieve the temperature coefficient of resistance (TCR) 4.5%/K with maximum germanium (Ge) concentration of 50%. The design of microbolometer entirely relies on standard CMOS and MEMS processes which makes it suitable candidate for commercial infrared imaging systems.

  12. Segmented Monolithic Germanium Detector Arrays for X-ray Absorption Spectroscopy

    SciTech Connect

    Dr. Ethan L. Hull

    2011-03-27

    The experimental results from the Phase I effort were extremely encouraging. During Phase I PHDs Co. made the first strides toward a new detector technology that could have great impact on synchrotron x-ray absorption (XAS) measurements, and x-ray detector technology in general. Detector hardware that allowed critical demonstration measurements of our technology was designed and fabricated. This new technology allows good charge collection from many pixels on a single side of a multi-element monolithic germanium planar detector. The detector technology provides “dot-like” collection electrodes having very low capacitance. The detector technology appears to perform as anticipated in the Phase I proposal. In particular, the 7-pixel detector studied showed remarkable properties; making it an interesting example of detector physics. The technology is enabled by the use of amorphous germanium contact technology on germanium planar detectors. Because of the scalability associated with the fabrication of these technologies at PHDs Co., we anticipate being able to supply larger detector systems at significantly lower cost than systems made in the conventional manner.

  13. Recommendations for a Static Cosmic Ray Shield for Enriched Germanium Detectors

    SciTech Connect

    Aguayo Navarrete, Estanislao; Orrell, John L.; Ankney, Austin S.; Berguson, Timothy J.

    2011-09-21

    This document provides a detailed study of cost and materials that could be used to shield the detector material of the international Tonne-scale germanium neutrinoless double-beta decay experiment from hadronic particles from cosmic ray showers at the Earth's surface. This work was motivated by the need for a shield that minimizes activation of the enriched germanium during storage; in particular, when the detector material is being worked on at the detector manufacturer's facility. This work considers two options for shielding the detector material from cosmic ray particles. One option is to use a pre-existing structure already located near the detector manufacturer, such as Canberra Industries in Meriden, Connecticut. The other option is to build a shield onsite at a detector manufacturer's site. This paper presents a cost and efficiency analysis of such construction.

  14. High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

    1993-01-01

    Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

  15. Initial Field Measurements with the Multisensor Airborne Radiation Survey (MARS) High Purity Germanium (HPGe) Detector Array

    SciTech Connect

    Fast, James E.; Bonebrake, Christopher A.; Dorow, Kevin E.; Glasgow, Brian D.; Jensen, Jeffrey L.; Morris, Scott J.; Orrell, John L.; Pitts, W. Karl; Rohrer, John S.; Todd, Lindsay C.

    2010-06-29

    Abstract: The Multi-sensor Airborne Radiation Survey (MARS) project has developed a new single cryostat detector array design for high purity germanium (HPGe) gamma ray spectrometers that achieves the high detection efficiency required for stand-off detection and actionable characterization of radiological threats. This approach is necessary since a high efficiency HPGe detector can only be built as an array due to limitations in growing large germanium crystals. The system is ruggedized and shock mounted for use in a variety of field applications. This paper reports on results from initial field measurements conducted in a truck and on two different boats.

  16. Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications

    NASA Astrophysics Data System (ADS)

    Reboud, Vincent; Widiez, Julie; Hartmann, Jean Michel; Osvaldo Dias, Guilherme; Fowler, Daivid; Chelnokov, Alexei; Gassenq, Alban; Guilloy, Kevin; Pauc, Nicolas; Calvo, Vincent; Geiger, Richard; Zabel, T.; Faist, Jérôme; Sigg, Hans

    2015-02-01

    Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 µm). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.

  17. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

    NASA Astrophysics Data System (ADS)

    Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian

    2016-04-01

    In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.

  18. Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-07

    A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scaling to 0.5 nm is also demonstrated based on these understandings.

  19. A 140-element Ge detector fabricated using amorphous Ge blocking contacts

    SciTech Connect

    Luke, P.N.; Pehl, R.H.; Dilmanian, F.A.

    1993-10-01

    A 140-element position-sensitive Ge detector has been fabricated as the prototype detector for the development of a monochromatic computed tomography system using synchrotron radiation. The detector was made in very few processing steps that included the use of amorphous Ge blocking contacts. The fabrication process and the results of testing the detector are described.

  20. Charge collection performance of a segmented planar high-purity germanium detector

    NASA Astrophysics Data System (ADS)

    Cooper, R. J.; Boston, A. J.; Boston, H. C.; Cresswell, J. R.; Grint, A. N.; Harkness, L. J.; Nolan, P. J.; Oxley, D. C.; Scraggs, D. P.; Lazarus, I.; Simpson, J.; Dobson, J.

    2008-10-01

    High-precision scans of a segmented planar high-purity germanium (HPGe) detector have been performed with a range of finely collimated gamma ray beams allowing the response as a function of gamma ray interaction position to be quantified. This has allowed the development of parametric pulse shape analysis (PSA) techniques and algorithms for the correction of imperfections in performance. In this paper we report on the performance of this detector, designed for use in a positron emission tomography (PET) development system.

  1. Analytical response function for planar Ge detectors

    NASA Astrophysics Data System (ADS)

    García-Alvarez, Juan A.; Maidana, Nora L.; Vanin, Vito R.; Fernández-Varea, José M.

    2016-04-01

    We model the response function (RF) of planar HPGe x-ray spectrometers for photon energies between around 10 keV and 100 keV. The RF is based on the proposal of Seltzer [1981. Nucl. Instrum. Methods 188, 133-151] and takes into account the full-energy absorption in the Ge active volume, the escape of Ge Kα and Kβ x-rays and the escape of photons after one Compton interaction. The relativistic impulse approximation is employed instead of the Klein-Nishina formula to describe incoherent photon scattering in the Ge crystal. We also incorporate a simple model for the continuous component of the spectrum produced by the escape of photo-electrons from the active volume. In our calculations we include external interaction contributions to the RF: (i) the incoherent scattering effects caused by the detector's Be window and (ii) the spectrum produced by photo-electrons emitted in the Ge dead layer that reach the active volume. The analytical RF model is compared with pulse-height spectra simulated using the PENELOPE Monte Carlo code.

  2. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    SciTech Connect

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

  3. Resonance-enhanced waveguide-coupled silicon-germanium detector

    NASA Astrophysics Data System (ADS)

    Alloatti, L.; Ram, R. J.

    2016-02-01

    A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  4. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  5. Deflection of 200 GeV/c and 450 GeV/c positively charged particles in a bent germanium crystal

    NASA Astrophysics Data System (ADS)

    Biino, C.; Clement, M.; Doble, N.; Elsener, K.; Freund, A.; Gatignon, L.; Grafström, P.; Kirsebom, K.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.

    1997-02-01

    Experimental results on high-energy beam deflection by means of a bent germanium crystal are presented. Record deflection efficiencies of 60% have been found for 450 GeV/c protons at small angles. The results obtained with 200 and 450 GeV/c positively charged particles are well described by a classical model, giving confidence in predictions for other crystals and different beam momenta.

  6. Search for global minimum geometries for medium sized germanium clusters: Ge12-Ge20

    NASA Astrophysics Data System (ADS)

    Bulusu, S.; Yoo, S.; Zeng, X. C.

    2005-04-01

    We have performed an unbiased search for the global minimum geometries of small-to-medium sized germanium clusters Gen(12⩽n⩽18) as well as a biased search (using seeding method) for Gen(17⩽n⩽20). We employed the basin-hopping algorithm coupled with the plane-wave pseudopotential density functional calculations. For each size, we started the unbiased search with using several structurally very different initial clusters, or we started the biased search with three different seeds. Irrespective of the initial structures of clusters we found that the obtained lowest-energy clusters of the size n =12-16 and 18 are the same. Among them, the predicted global minima of Gen(12⩽n⩽16) are identical to those reported previously [Shvartsburg et al., Phys. Rev. Lett. 83, 167 (1999)]. For n =17-20, we have identified two or three nearly isoenergetic low-lying isomers (for each size) that compete for the global minimum. Nearly all the low-lying clusters in the size range of 12⩽n⩽20 contain the tri-caped trigonal prism motif and are all prolate in geometry, in agreement with the experiment.

  7. Search for global minimum geometries for medium sized germanium clusters: Ge12-Ge20.

    PubMed

    Bulusu, S; Yoo, S; Zeng, X C

    2005-04-22

    We have performed an unbiased search for the global minimum geometries of small-to-medium sized germanium clusters Gen(12< or =n< or =18) as well as a biased search (using seeding method) for Gen(17< or =n< or =20). We employed the basin-hopping algorithm coupled with the plane-wave pseudopotential density functional calculations. For each size, we started the unbiased search with using several structurally very different initial clusters, or we started the biased search with three different seeds. Irrespective of the initial structures of clusters we found that the obtained lowest-energy clusters of the size n=12-16 and 18 are the same. Among them, the predicted global minima of Gen(12< or =n< or =16) are identical to those reported previously [Shvartsburg et al., Phys. Rev. Lett. 83, 167 (1999)]. For n=17-20, we have identified two or three nearly isoenergetic low-lying isomers (for each size) that compete for the global minimum. Nearly all the low-lying clusters in the size range of 12< or =n< or =20 contain the tri-caped trigonal prism motif and are all prolate in geometry, in agreement with the experiment.

  8. Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

    NASA Astrophysics Data System (ADS)

    Yoo, S.; Zeng, X. C.

    2006-05-01

    We performed a constrained search for the geometries of low-lying neutral germanium clusters GeN in the size range of 21⩽N⩽29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N ˜65.

  9. Electronic control of germanium telluride (GeTe) phase transition for electronic memory applications

    NASA Astrophysics Data System (ADS)

    Gwin, Alex H.; Coutu, Ronald A.

    2014-03-01

    Germanium telluride (GeTe) is a phase change material (PCM) that undergoes an exponential decrease in resistance from room temperature to its transition temperature at approximately 200 °C. Its resistivity decreases by as much as six orders of magnitude between amorphous and crystalline phases as it is heated. Chalcogenides such as GeTe have been utilized typically in nonvolatile optical memories such as CDs, DVDs, and Blu-ray discs, where the change in reflectivity between phases gives enough contrast for ON and OFF bits. Research over the past several years has begun to characterize the electronic control of PCM thin films for advanced electronic memory applications. By applying a voltage to control its resistance and crystallinity, GeTe has become a candidate for ultra-fast switching electronic memory, perhaps as an alternative to Flash memory. In this research, micro-scale PCM cells were fabricated using RF sputtering of a GeTe target and electron-beam evaporation on c-Si, SiO2/Si, Si3N4/Si, and Al2O3. Characterizations of the crystallization process were completed with spectroscopic ellipsometry (SE), varied voltage, and varied temperature in order to draw a comparison of the switching mechanism between thermally and electronically induced transition. The results show an optical contrast of Δn + iΔk = -0.858 + i1.056. Heat conduction experiments prove a growthdominated crystallization and fracturing of conductive crystallites when deposited on Al2O3. PCM cells exhibit memory-like I-V curves for smaller cell dimensions according to the trap-limited conduction model in chalcogenides. RF structures show the capability of being utilized as improved RF switches.

  10. A Compton-Vetoed Germanium Detector with Increased Sensitivity at Low Energies

    SciTech Connect

    Friedrich, S; Bates, C; Drury, O B; Burks, M; DiPrete, D

    2012-03-29

    The difficulty to directly detect plutonium in spent nuclear fuel due to the high Compton background of the fission products motivates the design of a Gamma detector with improved sensitivity at low energies. We have built such a detector by operating a thin high-purity Ge detector with a large scintillator Compton veto directly behind it. The Ge detector is thin to absorb just the low-energy Pu radiation of interest while minimizing Compton scattering of high energy radiation from the fission products. The subsequent scintillator is large so that forward scattered photons from the Ge detector interact in it at least once to provide an anti-coincidence veto for the Ge detector. For highest sensitivity, additional material in the line-of-sight is minimized, the radioactive sample is kept thin, and its radiation is collimated. We will discuss the instrument design, and demonstrate the feasibility of the approach with a prototype that employs two large CsI scintillator vetoes. Initial spectra of a thin Cs-137 calibration source show a background suppression of a factor of {approx}2.5 at {approx}100 keV, limited by an unexpectedly thick 4 mm dead layer in the Ge detector.

  11. How Processing Atmosphere Influences the Evolution of GeO[subscript 2]-Embedded Germanium Nanocrystals Obtained from the Thermolysis of Phenyl Trichlorogermane-Derived Polymers

    SciTech Connect

    Henderson, Eric J.; Hessel, Colin M.; Cavell, Ronald G.; Veinot, Jonathan G.C.

    2010-06-22

    We report the influence of processing atmosphere on the evolution of oxide-embedded germanium nanocrystals (Ge-NCs) formed by the thermal processing of (C{sub 6}H{sub 5}GeO{sub 1.5}){sub n} sol-gel polymers. In an inert processing atmosphere (100% Ar), the generation of elemental Ge from thermally induced disproportionation of the germanium rich oxide (GRO) leads to GeO{sub 2}-embedded Ge-NCs whose size is independent of peak processing temperature and time. Processing in a slightly reducing atmosphere (5% H{sub 2}/95% Ar) activates a second Ge-NC formation and growth pathway, involving the reduction of Ge oxide species. Here, we report that the processing atmosphere governs the distribution of Ge species. By modifying the contributions from redistribution and reduction reactions within the GRO, diffusion of Ge atoms throughout the oxide matrix and formation and growth of Ge-NCs are impacted.

  12. Characterization of a high-purity germanium detector for small-animal SPECT.

    PubMed

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-09-21

    We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

  13. Characterization of a high-purity germanium detector for small-animal SPECT

    PubMed Central

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-01-01

    We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

  14. Some gamma-ray shielding measurements made at altitudes greater than 115000 feet using large Ge(Li) detectors

    NASA Technical Reports Server (NTRS)

    Chapman, G. T.; Cumby, R. P.; Gibbons, J. H.; Macklin, R. L.; Parker, H. W.

    1972-01-01

    A series of balloon-flight experiments at altitudes greater than 115,000 feet were conducted to gain information relative to the use of composite shields (passive and/or active) for shielding large-volume, lithium-drifted, germanium (Ge(Li)) detectors used in gamma-ray spectrometers. Data showing the pulse-height spectra of the environmental gamma radiation as measured at 5.3 and 3.8 gms sq cm residual atmosphere with an unshielded diode detector are also presented.

  15. High Purity Germanium Detectors and Angular Distribution of 2Al(p,g)28Si

    NASA Astrophysics Data System (ADS)

    Wilson, Andre

    2014-09-01

    The purpose of this research was to study high purity germanium detector systems, and to calculate and compare absorption ratios of 27Al(p,g)28Si. Work with the germanium detector online array for gamma ray spectroscopy in nuclear astrophysics in the Nuclear Science Laboratory at the University of Notre Dame, also known as Georgina, including energy calibrations and work with software and hardware logic, provided the necessary background and experience with high purity germanium detectors and angular distribution of gamma rays. The knowledge taken from work with the Georgina detectors was then applied to the analysis of 27Al(p,g)28Si. Previous experimental data of 27Al(p,g)28Si was analyzed using the Ep = 1778.9 keV resonance. The data used was taken from a 2010 experiment completed in the Nuclear Science Laboratory at the University of Notre Dame using the 4MV KN particle accelerator. A 1977 paper by A. Anttila and J. Keinonen with analysis of the same reaction using the Ep = 992 keV resonance was used for the energy calibration and gamma energies. Peak fitting and background reduction of the spectra were completed using analysis software, jtek. Angular distribution ratios from a 56Co source were used for the normalization of the 27Al data. Angular dependent absorption factors were used to analyze the angular distribution of γ-rays from the 27Al beam target. With these absorption factors, relative gamma intensity measurements of 27Al(p,g)28Si were calculated.

  16. Evaluation of Segmented Amorphous-Contact Planar Germanium Detectors for Heavy-Element Research

    NASA Astrophysics Data System (ADS)

    Jackson, Emily G.

    The challenge of improving our understanding of the very heaviest nuclei is at the forefront of contemporary low-energy nuclear physics. In the last two decades, "in-beam" spectroscopy experiments have advanced from Z=98 to Z=104, Rutherfordium, allowing insights into the dynamics of the fission barrier, high-order deformations, and pairing correlations. However, new detector technologies are needed to advance to even heavier nuclei. This dissertation is aimed at evaluating one promising new technology; large segmented planar germanium wafers for this area of research. The current frontier in gamma-ray spectroscopy involves large-volume (>9 cm thick) coaxial detectors that are position sensitive and employ gamma-ray "tracking". In contrast, the detectors assessed in this dissertation are relatively thin (~1 cm) segmented planar wafers with amorphous-germanium strip contacts that can tolerate extremely high gamma-ray count rates, and can accommodate hostile neutron fluxes. They may be the only path to heavier "in-beam" spectroscopy with production rates below 1 nanobarn. The resiliency of these detectors against neutron-induced damage is examined. Two detectors were deliberately subjected to a non-uniform neutron fluence leading to considerable degradation of performance. The neutrons were produced using the 7Li(p, n)7Be reaction at the UMass Lowell Van-de-Graaff accelerator with a 3.7-MeV proton beam incident on a natural Li target. The energy of the neutrons emitted at zero degrees was 2.0 MeV, close to the mean energy of the fission neutron spectrum, and each detector was exposed to a fluence >3.6 x109 n/cm2. A 3-D software "trap-corrector" gain-matching algorithm considerably restored the overall performance. Other neutron damage mitigation tactics were explored including over biasing the detector and flooding the detector with a high gamma-ray count rate. Various annealing processes to remove neutron damage were investigated. An array of very large diameter

  17. Measurement of the dead layer thickness in a p-type point contact germanium detector

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  18. A precise method to determine the activity of a weak neutron source using a germanium detector.

    PubMed

    Duke, M J M; Hallin, A L; Krauss, C B; Mekarski, P; Sibley, L

    2016-10-01

    A standard high purity germanium (HPGe) detector was used to determine the previously unknown neutron activity of a weak americium-beryllium (AmBe) neutron source. γ rays were created through (27)Al(n,n'), (27)Al(n,γ) and (1)H(n,γ) reactions induced by the neutrons on aluminum and acrylic disks, respectively. These γ rays were measured using the HPGe detector. Given the unorthodox experimental arrangement, a Monte Carlo simulation was developed to model the efficiency of the detector system to determine the neutron activity from the measured γ rays. The activity of our neutron source was determined to be 307.4±5.0n/s and is consistent for the different neutron-induced γ rays.

  19. A precise method to determine the activity of a weak neutron source using a germanium detector.

    PubMed

    Duke, M J M; Hallin, A L; Krauss, C B; Mekarski, P; Sibley, L

    2016-10-01

    A standard high purity germanium (HPGe) detector was used to determine the previously unknown neutron activity of a weak americium-beryllium (AmBe) neutron source. γ rays were created through (27)Al(n,n'), (27)Al(n,γ) and (1)H(n,γ) reactions induced by the neutrons on aluminum and acrylic disks, respectively. These γ rays were measured using the HPGe detector. Given the unorthodox experimental arrangement, a Monte Carlo simulation was developed to model the efficiency of the detector system to determine the neutron activity from the measured γ rays. The activity of our neutron source was determined to be 307.4±5.0n/s and is consistent for the different neutron-induced γ rays. PMID:27474906

  20. High-Resolution Gamma-Ray Imaging Measurements Using Externally Segmented Germanium Detectors

    NASA Technical Reports Server (NTRS)

    Callas, J.; Mahoney, W.; Skelton, R.; Varnell, L.; Wheaton, W.

    1994-01-01

    Fully two-dimensional gamma-ray imaging with simultaneous high-resolution spectroscopy has been demonstrated using an externally segmented germanium sensor. The system employs a single high-purity coaxial detector with its outer electrode segmented into 5 distinct charge collection regions and a lead coded aperture with a uniformly redundant array (URA) pattern. A series of one-dimensional responses was collected around 511 keV while the system was rotated in steps through 180 degrees. A non-negative, linear least-squares algorithm was then employed to reconstruct a 2-dimensional image. Corrections for multiple scattering in the detector, and the finite distance of source and detector are made in the reconstruction process.

  1. Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers

    NASA Astrophysics Data System (ADS)

    Reboud, V.; Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Escalante, J. M.; Tardif, S.; Pauc, N.; Hartmann, J. M.; Widiez, J.; Gomez, E.; Bellet Amalric, E.; Fowler, D.; Rouchon, D.; Duchemin, I.; Niquet, Y. M.; Rieutord, F.; Faist, J.; Geiger, R.; Zabel, T.; Marin, E.; Sigg, H.; Chelnokov, A.; Calvo, V.

    2016-03-01

    Currently, one of the main challenges in the field of silicon photonics is the fabrication of efficient laser sources compatible with the microelectronic fabrication technology. An alternative to the complexity of integration of group III-V laser compounds is advancing from high tensile strains applied to germanium leading to improved emission properties by transforming the material from an indirect to a direct bandgap semiconductor. Theory predicts this transformation occurs at around 4.7% uniaxial tensile strain or 2.0% bi-axial tensile strain. Here, we report on ultrahigh strains obtained by amplifying the residual strain from novel optical Germanium-On-Insulator (GeOI) substrates fabricated by Smart CutTM technology and patterned with micro-bridges and micro-crosses. The high crystalline quality of the GeOI layers dramatically declined the mechanical failure limits when liberating the Ge microbridges. Record level Raman shift of 8.1 cm-1 for biaxial (micro-crosses) and 8.7 cm-1 for uniaxial stress (micro-bridges) were reached by carefully designing the geometry of the micro-structures. The photoluminescence (PL) evolution is compared to theoretical calculations based on the tight-binding model revealing a detailed understanding of the influence of strain on the germanium optical properties.

  2. Luminescence and structural properties of germanium nanocrystals formed by annealing multilayer GeOx/Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Grachev, D. A.; Garakhin, S. A.; Belolipetsky, A. V.; Nezhdanov, A. V.; Ershov, A. V.

    2016-08-01

    By Raman scattering, luminescence, and IR-absorption spectroscopy multilayer nanoperiodic structures Ge/Al2O3 & GeOx/Al2O3 have been investigated. The samples have been obtained by the physical evaporation; their properties have been varied by changing the layer thicknesses (2-20 nm) and annealing temperature (500-1000 °C). It is found that germanium nanocrystals are formed in the temperature range of 500-800 °C and exhibit intense size-depend photoluminescence at 1.2 eV and 1.8-2.0 eV.

  3. Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

    NASA Technical Reports Server (NTRS)

    Gehrels, N.; Cline, T. L.; Teegarden, B. J.; Tueller, J.; Leventhal, M.; Maccallum, C. J.; Ryge, P.

    1983-01-01

    Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

  4. Gamma background studies for the XENON experiment using a High Purity Germanium Detector

    NASA Astrophysics Data System (ADS)

    Angle, Jesse Isaac

    The XENON Dark Matter Experiment, deployed at the Gran Sasso National Laboratory in Italy on March 2006, is a liquid noble gas detector designed to directly detect dark matter. The detector uses a dual-phase (gas/liquid) Xenon target to search for nuclear recoils associated with nucleus-WIMP interactions. Due to the high sensitivity needed in such an experiment, it is vital to not only reduce the background but to also understand the remaining background so as to aid in the understanding of the data as well as to facilitate upgrades beyond the early Research and Development phases. Many of the components of the XENON10 detector have been screened using a High Purity Germanium Detector known as the GATOR detector. Full analysis of the screening data requires Monte Carlo simulations of the GATOR detector and the sample. Results from this screening will be presented. Using the information obtained from the screening operation, Monte Carlo simulations of the XENON10 electron recoil background will be examined and compared to the actual detector data. The success of this simulation to data comparison indicates that we have a good understanding of the XENON10 gamma background and will be able to make more informed decisions regarding the next stage of detector development. This type of analysis has aided in the selection and design of many of the materials and components being incorporated into the new XENON100 detector, the next generation detector which will be capable of improving the limit set by XENON10 by at least an order of magnitude. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http:/ /www.uflib.ufl.edu/etd.html)

  5. Pulse shape discrimination for background rejection in germanium gamma-ray detectors

    NASA Technical Reports Server (NTRS)

    Feffer, P. T.; Smith, D. M.; Campbell, R. D.; Primbsch, J. H.; Lin, R. P.

    1989-01-01

    A pulse-shape discrimination (PSD) technique is developed to reject the beta-decay background resulting from activation of Ge gamma-ray detectors by cosmic-ray secondaries. These beta decays are a major source of background at 0.2-2 MeV energies in well shielded Ge detector systems. The technique exploits the difference between the detected current pulse shapes of single- and multiple-site energy depositions within the detector: beta decays are primarily single-site events, while photons at these energies typically Compton scatter before being photoelectrically absorbed to produce multiple-site events. Depending upon the amount of background due to sources other than beta decay, PSD can more than double the detector sensitivity.

  6. Exploration Of Activity Measurements And Equilibrium Checks For Sediment Dating Using Thick-Window Germanium Detectors

    SciTech Connect

    Warner, Jacob A.; Gladkis, Laura G.; Timmers, Heiko; Fitzsimmons, Kathryn E.; Reynolds, Eva M.

    2011-06-01

    Activity measurements on sediment samples for trapped-charge geological dating using gamma-ray spectroscopy are an important verification of the field-site dose rate determination. Furthermore gamma-ray spectroscopy can check if the natural decay series are in secular equilibrium which is a crucial assumption in such dating. Typically the activities of leading members of the Thorium and Uranium decay series are measured, which requires Germanium detectors with thin windows and good energy resolution in order to effectively detect the associated low energy gamma-rays. Such equipment is not always readily available. The potential of conventional Germanium detectors with thick entrance window has been explored towards routine gamma-ray spectroscopy of sediment samples using higher energy gamma-rays. Alternative isotopes, such as Ac-228 and Pb-212 for the Thorium series, and Pa-234m, Ra-226 and Bi-214 for the Uranium series, have been measured in order to determine the mass-specific activity for the respective series and possibly provide a check of secular equilibrium. In addition to measurements of the K-40 activity, with the alternative approach, the activities of both decay series can be accurately determined. The secular equilibrium condition may be tested for the Thorium series. Measurement accuracy for Pa-234m is, however, not sufficient to permit also a reliable check of equilibrium for the Uranium series.

  7. Canister cryogenic system for cooling germanium semiconductor detectors in borehole and marine probes

    USGS Publications Warehouse

    Boynton, G.R.

    1975-01-01

    High resolution intrinsic and lithium-drifted germanium gamma-ray detectors operate at about 77-90 K. A cryostat for borehole and marine applications has been designed that makes use of prefrozen propane canisters. Uses of such canisters simplifies cryostat construction, and the rapid exchange of canisters greatly reduces the time required to restore the detector to full holding-time capability and enhances the safety of a field operation where high-intensity 252Cf or other isotopic sources are used. A holding time of 6 h at 86 K was achieved in the laboratory in a simulated borehole probe in which a canister 3.7 cm diameter by 57 cm long was used. Longer holding times can be achieved by larger volume canisters in marine probes. ?? 1975.

  8. The position response of a large-volume segmented germanium detector

    NASA Astrophysics Data System (ADS)

    Descovich, M.; Nolan, P. J.; Boston, A. J.; Dobson, J.; Gros, S.; Cresswell, J. R.; Simpson, J.; Lazarus, I.; Regan, P. H.; Valiente-Dobon, J. J.; Sellin, P.; Pearson, C. J.

    2005-11-01

    The position response of a large-volume segmented coaxial germanium detector is reported. The detector has 24-fold segmentation on its outer contact. The output from each contact was sampled with fast digital signal processing electronics in order to determine the position of the γ-ray interaction from the signal pulse shape. The interaction position was reconstructed in a polar coordinate system by combining the radial information, contained in the rise-time of the pulse leading edge, with the azimuthal information, obtained from the magnitude of the transient charge signals induced on the neighbouring segments. With this method, a position resolution of 3-7 mm is achieved in both the radial and the azimuthal directions.

  9. Performance of a Ge-microstrip imaging detector and polarimeter.

    PubMed

    Spillmann, U; Bräuning, H; Hess, S; Beyer, H; Stöhlker, Th; Dousse, J-Cl; Protic, D; Krings, T

    2008-08-01

    Using 98% linearly polarized radiation at the European Synchrotron Radiation Facility in Grenoble, the performance of a prototype two-dimensional microstrip Ge(i) detector for x-ray imaging and as a Compton polarimeter has been evaluated. Using the energy and position sensitivity of the detector, the ability to obtain a complete reconstruction of the Compton event has been demonstrated. The modulation coefficient of the polarimeter is in good agreement with the theoretical limit of a perfect detector. PMID:19044330

  10. Performance of a Ge-microstrip imaging detector and polarimeter

    SciTech Connect

    Spillmann, U.; Braeuning, H.; Hess, S.; Beyer, H.; Stoehlker, Th.; Dousse, J.-Cl.; Protic, D.; Krings, T.

    2008-08-15

    Using 98% linearly polarized radiation at the European Synchrotron Radiation Facility in Grenoble, the performance of a prototype two-dimensional microstrip Ge(i) detector for x-ray imaging and as a Compton polarimeter has been evaluated. Using the energy and position sensitivity of the detector, the ability to obtain a complete reconstruction of the Compton event has been demonstrated. The modulation coefficient of the polarimeter is in good agreement with the theoretical limit of a perfect detector.

  11. Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

    SciTech Connect

    Olsen, C S

    1998-05-01

    This research has shown that epilayers with residual impurity concentrations of 5 x 10{sup 13} cm{sup {minus}3} can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at proper wavelengths when reversed biased even though the response did not quite reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm{sup {minus}1} with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

  12. Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Olsen, C. S.

    1998-01-01

    This research has shown that epilayers with residual impurity concentrations of 5 x 10(sup 13) cm(exp -3) can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm(exp -1) with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

  13. Inelasticity and precipitation of germanium from a solid solution in Al-Ge binary alloys

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.

    2015-08-01

    The influence of precipitation of germanium atoms in a solid solution on the dependence of the inelasticity characteristics on the germanium content in aluminum-germanium alloys prepared by directional crystallization has been studied. It has been shown that the Young's modulus defect, the amplitude-dependent decrement, and the microplastic flow stress at a specified cyclic strain amplitude have extreme values at the eutectic germanium content in the alloy. The eutectic composition of the alloy undergoes a ductilebrittle transition. It has been found that there is a correlation between the dependences of the Young's modulus defect, amplitude-dependent decrement, microplastic flow stress, and specific entropy of the exothermal process of germanium precipitation on the germanium content in the hypoeutectic alloy. The concentration dependences of the inelasticity characteristics and their changes after annealing have been explained by the change in the resistance to the motion of intragrain dislocations due to different structures of the Guinier-Preston zones formed during the precipitation of germanium atoms.

  14. The Largest Metalloid Group 14 Cluster, Ge18[Si(SiMe3)3]6 : An Intermediate on the Way to Elemental Germanium.

    PubMed

    Kysliak, Oleksandr; Schrenk, Claudio; Schnepf, Andreas

    2016-02-24

    The oxidation of [Ge9(Hyp)3](-) (Hyp=Si(SiMe3 )3) with an Fe(II) salt leads to Ge18 (Hyp)6 (1), the largest Group 14 metalloid cluster that has been structurally characterized to date. The arrangement of the 18 germanium atoms in 1 shows similarities to that found in the solid-state structure Ge(cF136). Furthermore, 1 can be described as a macropolyhedral cluster of two Ge9 units. Quantum-chemical calculations further hint at a strained arrangement so that 1 can be considered as a first trapped intermediate on the way from Ge9 units to elemental germanium with the clathrate-II structure (Ge(cF136)).

  15. Measurement of 238U muonic x-rays with a germanium detector setup

    SciTech Connect

    Esch, Ernst I; Jason, Andrew; Miyadera, Haruo; Hoteling, Nathan J; Heffner, Robert H; Adelmann, Andreas; Stocki, Trevor; Mitchell, Lee

    2009-01-01

    In the field of nuclear non-proliferation muon interactions with materials are of great interest. This paper describes an experiment conducted at the Paul Scherrer Institut (PSI) in Switzerland where a muon beam is stopped in a uranium target. The muons produce characteristic muonic x-rays. Muons will penetrate shielding easily and the produced characteristic x-rays can be used for positive isotope identification. Furthermore, the x-rays for uranium isotopes lie in the energy range of 6-7 MeV, which allows them to have an almost optimal mean free path in heavy shielding such as lead or steel. A measurement was conducted at PSI to prove the feasibility of detecting muonic x-rays from a large sample of depleted uranium (several kilograms) with a germanium detector. In this paper, the experimental setup and analysis of the measurement itself is presented.

  16. Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches

    SciTech Connect

    Agnese, R.; Balakishiyeva, D.; Saab, T.; Welliver, B.; Anderson, A. J.; Figueroa-Feliciano, E.; Hertel, S. A.; McCarthy, K. A.; Basu Thakur, R.; Bauer, D. A.; Holmgren, D.; Hsu, L.; Loer, B.; Schmitt, R.; Borgland, A.; Brandt, D.; Brink, P. L.; Do Couto E Silva, E.; Godfrey, G. L.; Hasi, J. [SLAC National Accelerator Laboratory Collaboration: The SuperCDMS Collaboration; and others

    2013-10-14

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were tested with two {sup 210}Pb sources producing ∼130 beta decays/hr. In ∼800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 × 10{sup −5} at 90% C.L., corresponding to < 0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  17. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Searches

    SciTech Connect

    Agnese, R.; Anderson, A. J.; Balakishiyeva, D.; Basu Thakur, R.; Bauer, D. A.; Borgland, A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Cerdeno, D. G.; Chagani, H.; Cherry, M.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Do Couto E Silva, E.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Fox, J.; Fritts, M.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hasi, J.; Hertel, S. A.; Hines, B. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kenany, S.; Kennedy, A.; Kenney, C. J.; Kiveni, M.; Koch, K.; Loer, B.; Lopez Asamar, E.; Mahapatra, R.; Mandic, V.; Martinez, C.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Moore, D. C.; Nadeau, P.; Nelson, R. H.; Novak, L.; Page, K.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Radpour, R.; Rau, W.; Redl, P.; Reisetter, A.; Resch, R. W.; Ricci, Y.; Saab, T.; Sadoulet, B.; Sander, J.; Schmitt, R.; Schneck, K.; Schnee, Richard; Scorza, S.; Seitz, D.; Serfass, B.; Shank, B.; Speller, D.; Tomada, A.; Villano, A. N.; Welliver, B.; Wright, D. H.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2013-10-17

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Furthermore, surface event rejection capabilities were tested with two 210Pb sources producing ~130 beta decays/hr. We found that in ~800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 x 10-5 at 90% C.L., corresponding to<0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  18. Testing the Ge detectors for the MAJORANA DEMONSTRATOR

    SciTech Connect

    Xu, W.; Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W.P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G.H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Yakushev, E.; Young, A. R.; Yu, C. -H.; Yumatov, V.

    2015-03-24

    High purity germanium (HPGe) crystals will be used for the MAJORANA DEMONSTRATOR, where they serve as both the source and the detector for neutrinoless double beta decay. It is crucial for the experiment to understand the performance of the HPGe crystals. A variety of crystal properties are being investigated, including basic properties such as energy resolution, efficiency, uniformity, capacitance, leakage current and crystal axis orientation, as well as more sophisticated properties, e.g. pulse shapes and dead layer and transition layer distributions. In this talk, we will present our measurements that characterize the HPGe crystals. We will also discuss the our simulation package for the detector characterization setup, and show that additional information can be extracted from data-simulation comparisons.

  19. Testing the Ge detectors for the MAJORANA DEMONSTRATOR

    DOE PAGESBeta

    Xu, W.; Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; et al

    2015-03-24

    High purity germanium (HPGe) crystals will be used for the MAJORANA DEMONSTRATOR, where they serve as both the source and the detector for neutrinoless double beta decay. It is crucial for the experiment to understand the performance of the HPGe crystals. A variety of crystal properties are being investigated, including basic properties such as energy resolution, efficiency, uniformity, capacitance, leakage current and crystal axis orientation, as well as more sophisticated properties, e.g. pulse shapes and dead layer and transition layer distributions. In this talk, we will present our measurements that characterize the HPGe crystals. We will also discuss the ourmore » simulation package for the detector characterization setup, and show that additional information can be extracted from data-simulation comparisons.« less

  20. Thermoelectric properties of polycrystalline type-I germanium clathrates Ba8Ga16-xGe30+x

    NASA Astrophysics Data System (ADS)

    Leszczynski, J.; Kolezynski, A.; Wojciechowski, K. T.

    2012-06-01

    Samples of germanium clathrates A8Ga16-xGe30+x (A=Ba, K) filled with Ba and K were prepared using standard powder metallurgy methods. The structure and phase composition of the prepared samples were analyzed by powder x-ray diffraction XRD. Due to experimental problems we were unable to synthesize K containing samples with the desired quality. Preliminary electronic band structure calculations were performed for two compositions of Ba8Ga16-xGe30+x (x=0; 10) based on the DTF theory. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range 20 - 450°C. The observed properties were compared with the electronic band structure calculations, showing good qualitative correlation between measured transport properties and theoretical predictions.

  1. Simulation results of Pulse Shape Discrimination (PSD) for background reduction in INTEGRAL Spectrometer (SPI) germanium detectors

    NASA Technical Reports Server (NTRS)

    Slassi-Sennou, S. A.; Boggs, S. E.; Feffer, P. T.; Lin, R. P.

    1997-01-01

    Pulse Shape Discrimination (PSD) for background reduction will be used in the INTErnational Gamma Ray Astrophysics Laboratory (INTEGRAL) imaging spectrometer (SPI) to improve the sensitivity from 200 keV to 2 MeV. The observation of significant astrophysical gamma ray lines in this energy range is expected, where the dominant component of the background is the beta(sup -) decay in the Ge detectors due to the activation of Ge nuclei by cosmic rays. The sensitivity of the SPI will be improved by rejecting beta(sup -) decay events while retaining photon events. The PSD technique will distinguish between single and multiple site events. Simulation results of PSD for INTEGRAL-type Ge detectors using a numerical model for pulse shape generation are presented. The model was shown to agree with the experimental results for a narrow inner bore closed end cylindrical detector. Using PSD, a sensitivity improvement factor of the order of 2.4 at 0.8 MeV is expected.

  2. Characterization and performance of germanium detectors with sub-keV sensitivities for neutrino and dark matter experiments

    NASA Astrophysics Data System (ADS)

    Soma, A. K.; Singh, M. K.; Singh, L.; Kumar, G. Kiran; Lin, F. K.; Du, Q.; Jiang, H.; Liu, S. K.; Ma, J. L.; Sharma, V.; Wang, L.; Wu, Y. C.; Yang, L. T.; Zhao, W.; Agartioglu, M.; Asryan, G.; Chang, Y. Y.; Chen, J. H.; Chuang, Y. C.; Deniz, M.; Hsu, C. L.; Hsu, Y. H.; Huang, T. R.; Jia, L. P.; Kerman, S.; Li, H. B.; Li, J.; Liao, F. T.; Liao, H. Y.; Lin, C. W.; Lin, S. T.; Marian, V.; Ruan, X. C.; Sevda, B.; Shen, Y. T.; Singh, M. K.; Singh, V.; Sonay, A.; Su, J.; Subrahmanyam, V. S.; Tseng, C. H.; Wang, J. J.; Wong, H. T.; Xu, Y.; Yang, S. W.; Yu, C. X.; Yue, Q.; Zeyrek, M.

    2016-11-01

    Germanium ionization detectors with sensitivities as low as 100 eVee (electron-equivalent energy) open new windows for studies on neutrino and dark matter physics. The relevant physics subjects are summarized. The detectors have to measure physics signals whose amplitude is comparable to that of pedestal electronic noise. To fully exploit this new detector technique, various experimental issues including quenching factors, energy reconstruction and calibration, signal triggering and selection as well as evaluation of their associated efficiencies have to be attended. The efforts and results of a research program to address these challenges are presented.

  3. Detection of gamma rays using a coupled array of high-purity germanium detectors

    NASA Astrophysics Data System (ADS)

    Debiak, T. W.; Bocskor, S. J.; D'Agostino, M. D.; Schneid, E. J.; Hughlock, B. W.

    1990-12-01

    The characteristics of a seven-element hexagonal close-packed array of high-purity germanium detectors were measured. The energy resolution or full width at half maximum (FWHM) and full width at 10 percent maximum (FW.1M) were measured in both the uncoupled mode and the sum-coincidence mode between 333 keV and 2.612 MeV. The fractional peak efficiency improvement obtained in sum-coincidence mode compared with the uncoupled mode increased from 0 percent at 80 keV to 19.7 percent at 2.612 MeV. A Monte Carlo code developed to compare these results with theoretical models shows substantial agreement with experiments from 80 keV to 1.332 MeV. A description of the detector, signal processing electronics, data acquisition system, and software is given. A technique based on real-time compensation of gain and offset drift is developed to minimize the peak broadening in real-time sum-coincidence spectra. This technique allows data acquisition to commence shortly after turn-on while the system approaches temperature stabilization.

  4. 12 GeV detector technology at Jefferson Lab

    SciTech Connect

    Leckey, John P.; Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  5. 12 GeV detector technology at Jefferson Lab

    SciTech Connect

    Leckey, John P.

    2013-04-01

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  6. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  7. Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.

    PubMed

    Cho, Seongjae; Park, Byung-Gook; Yang, Changjae; Cheung, Stanley; Yoon, Euijoon; Kamins, Theodore I; Yoo, S J Ben; Harris, James S

    2012-07-01

    Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.

  8. Characteristics of Signals Originating near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    SciTech Connect

    Aguayo, E.; Amman, M.; Avignone, F. T.; Barton, P. J.; Beene, James R; Bertrand Jr, Fred E; Boswell, M.; Brudanin, V.; Busch, M.; Chan, Y-D; Christofferson, C. D.; Collar, Juan I.; Combs, D. C.; Detwiler, J.A.; Doe, P. J.; Efremenko, Yuri; Egorov, V.; Ejiri, H.; Elliott, S. R.; Esterline, J.; Fast, J.E.; Fields, N.; Finnerty, P.; Gehman, V. M.; Giovanetti, G. K.; Green, M. P.; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, R.; Hoppe, E.W.; Horton, M.; Howard, S.; Howe, M. A.; Keeter, K.J.; Kidd, M. F.; Knecht, A.; Kochetov, O.; Konovalov, S.I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Looker, Q.; Luke, P.N.; MacMullin, S.; Martin, R.D.; Merriman, J. H.; Miller, M. L.; Mizouni, L.; Orrell, John L.; Overman, N. R.; Perumpilly, G.; Phillips II, D. G.; et al.

    2013-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  9. Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

    NASA Astrophysics Data System (ADS)

    Balakumar, S.; Buddharaju, K. D.; Tan, B.; Rustagi, S. C.; Singh, N.; Kumar, R.; Lo, G. Q.; Tripathy, S.; Kwong, D. L.

    2009-03-01

    In this study, the authors report on the fabrication of Ge-rich SiGe nanowires (SGNWs) by oxidation of SiGe fins on insulator. Nanowires of different shapes and size are obtained by varying the initial fin shape, Ge content, oxidation process temperature, and oxidation time. Transmission electron microscopy observations revealed nanowires with rectangular, square, elliptical, circular, octagonal, and hexagonal cross-sections, with different Ge content. The elliptical, octagonal, and hexagonal facets are unique shapes formed with low-index faces belonging to (110) groups. These possess very high Ge content up to 95%, and were obtained in the samples oxidized from 850°C to 875°C. In␣addition, the in-plane strain in the fabricated SGNWs is evaluated using micro-Raman spectroscopy. The possible mechanism behind the formation and transformation of different nanowire shapes is discussed.

  10. Advanced Ge detectors for gamma-ray astronomy

    NASA Technical Reports Server (NTRS)

    Varnell, Larry S.

    1991-01-01

    Externally segmented coaxial detectors are fabricated for high efficiency in detecting gamma rays from cosmic sources with good sensitivities. The external background is reduced by enclosing the Ge detector array inside a thick active shield. The outer electrode of the coaxial detectors is subdivided into five segments, and internal beta activity is rejected by operating the segmented detector in a multisegment mode. The multisegment mode requires that events be detected in two or more segments before they are recorded. The full-energy-peak (FEP) efficiency of the unit is tested as a function of the incident gamma-ray energy and of the discriminator threshold of the segments. Measurements of beta-rejection and FEP efficiency are compared with Monte Carlo calculations, and good agreement is noted.

  11. Evaluation of New Contact Technology for A Planar High-Purity Germanium Double-Sided Strip Detector

    NASA Astrophysics Data System (ADS)

    Jackson, E.; Chowdhury, P.; Lister, C. J.; Diaz, C.; Skinner, M.; Hull, E.; Pehl, R.

    2013-10-01

    New technologies for making position sensitive γ-ray detectors have applications in space science, medical imaging, homeland security, and nuclear structure research. One promising approach uses high-purity germanium wafers in Low Energy Photon Spectrometer (LEPS) geometry, where segmentation of the electrodes into strips forms a Double-Sided Strip Detector (DSSD). The position-sensitivity afforded by the many strips is ideal for the study of Compton scattering and polarization. However, challenges with the manufacture and performance of the rectifying contacts continue to plague the advancement of planar DSSDs. The data gathered from the combination of multiple strips' signals suffers from cross-talk between the strips and charge loss due to wide inter-strip gaps. A planar, high-purity DSSD has been developed by PHDs Co. with an alternative electrode material, amorphous germanium, that can be placed such that the gaps between the strips are half the width required by other contact material. This research seeks to quantify the performance gains of the amorphous germanium contacts and smaller inter-strip gaps while exploring the possibilities for this DSSD as an imager and polarization detector. Research supported by the U.S. Department of Energy (DE-FG02-94ER40848).

  12. A germanium hybrid pixel detector with 55μm pixel size and 65,000 channels

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Struth, B.; Hirsemann, H.; Sarajlic, M.; Smoljanin, S.; Zuvic, M.; Lampert, M. O.; Fritzsch, T.; Rothermund, M.; Graafsma, H.

    2014-12-01

    Hybrid pixel semiconductor detectors provide high performance through a combination of direct detection, a relatively small pixel size, fast readout and sophisticated signal processing circuitry in each pixel. For X-ray detection above 20 keV, high-Z sensor layers rather than silicon are needed to achieve high quantum efficiency, but many high-Z materials such as GaAs and CdTe often suffer from poor material properties or nonuniformities. Germanium is available in large wafers of extremely high quality, making it an appealing option for high-performance hybrid pixel X-ray detectors, but suitable technologies for finely pixelating and bump-bonding germanium have not previously been available. A finely-pixelated germanium photodiode sensor with a 256 by 256 array of 55μm pixels has been produced. The sensor has an n-on-p structure, with 700μm thickness. Using a low-temperature indium bump process, this sensor has been bonded to the Medipix3RX photoncounting readout chip. Tests with the LAMBDA readout system have shown that the detector works successfully, with a high bond yield and higher image uniformity than comparable high-Z systems. During cooling, the system is functional around -80°C (with warmer temperatures resulting in excessive leakage current), with -100°C sufficient for good performance.

  13. Full Range MGA Plutonium Isotopic Analysis using Single Ge Detector

    SciTech Connect

    Buckley, W.M.; Wang, T.F.; Friensehner, A.; Kreek, S.A.; Lanier, R.G.; Parker, W.E.; Ruhter, W.; Twomey, T.; Martinez, D.; Keyser, R.; Sangsingkeow, P.

    2000-06-26

    The Gamma-Ray multi-group analysis code MGA developed at Lawrence Livermore National Laboratory has been widely used in the area of gamma-ray non-destructive plutonium assay. This plutonium isotopic analysis code de-convolutes the complicated, 100-keV x-ray and gamma-ray region to obtain the ratio of Pu isotopes. Calibration of the detector efficiency is not required, but is determined intrinsically from the measured spectra. The code can either analyze low-energy gamma-ray spectrum taken using a high-resolution HPGe detector for energies below 300 keV, or analyze the low-energy spectrum combined with a high-energy spectrum (up to 1 MeV) in the two-detector analysis mode. In the latter case, the use of two detectors has been mandated by the conflicting requirements: excellent resolution at low energies (characteristic of small planar detectors) with good high-energy efficiency (characteristic of coaxial detectors). Usually, a high-energy spectrum taken using a coaxial Ge detector will not provide sufficient energy resolution for 100-keV plutonium isotopic analysis, while the small planar used at low energies has inadequate high-energy efficiency. An optimized-geometry ORTEC HPGe detector has been developed which combines good energy resolution at 100 keV combined with acceptable high-energy ({approx} 1 MeV) efficiency in a single detector. It has been used to gather spectra of both low- and high-energy regions of plutonium spectra simultaneously, for analysis by MGA in the two-detector mode. Five Pu gamma-ray calibration standard sources were used in this study of this special detector.

  14. Performance of A Compact Multi-crystal High-purity Germanium Detector Array for Measuring Coincident Gamma-ray Emissions

    SciTech Connect

    Howard, Chris; Daigle, Stephen; Buckner, Matt; Erikson, Luke E.; Runkle, Robert C.; Stave, Sean C.; Champagne, Art; Cooper, Andrew; Downen, Lori; Glasgow, Brian D.; Kelly, Keegan; Sallaska, Anne

    2015-02-18

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ)15O* reaction for several transition energies at an effective center of mass energy of 163 keV. Owing to the segmented nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within the uncertainties with the past measurements. Details of the analysis and detector performance will be presented.

  15. Performance of a compact multi-crystal high-purity germanium detector array for measuring coincident gamma-ray emissions

    NASA Astrophysics Data System (ADS)

    Howard, Chris; Daigle, Stephen; Buckner, Matt; Erikson, Luke E.; Runkle, Robert C.; Stave, Sean C.; Champagne, Arthur E.; Cooper, Andrew; Downen, Lori; Glasgow, Brian D.; Kelly, Keegan; Sallaska, Anne

    2015-05-01

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ)15O* reaction for several transition energies at an effective center-of-mass energy of 163 keV. Owing to the granular nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within their uncertainties with the past measurements. Details of the analysis and detector performance are presented.

  16. New techniques and results in {sup 76}Ge double-beta decay

    SciTech Connect

    Miley, H.S.; Brodzinski, R.L.; Hensley, W.K.; Reeves, J.H.; Avignone, F.T.

    1991-09-01

    Several methods of lowering the background in germanium double-beta decay experiments are discusses. A technique for increasing confidence in double-beta decay measurements by variation of detector enrichment is demonstrated in the case of two-neutrino decay mode of {sup 76}Ge. The impact of cosmic ray spallation in low-background isotopically enriched germanium detectors is examined.

  17. New techniques and results in sup 76 Ge double-beta decay

    SciTech Connect

    Miley, H.S.; Brodzinski, R.L.; Hensley, W.K.; Reeves, J.H. ); Avignone, F.T. . Dept. of Physics)

    1991-09-01

    Several methods of lowering the background in germanium double-beta decay experiments are discusses. A technique for increasing confidence in double-beta decay measurements by variation of detector enrichment is demonstrated in the case of two-neutrino decay mode of {sup 76}Ge. The impact of cosmic ray spallation in low-background isotopically enriched germanium detectors is examined.

  18. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    NASA Astrophysics Data System (ADS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-12-01

    The thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18O-tracers composing the GeO2 underlayers diffuse within the HfO2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlOx interlayers between the HfO2 and GeO2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

  19. Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

    SciTech Connect

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

    2015-12-21

    The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

  20. Pulse shape discrimination studies with a Broad-Energy Germanium detector for signal identification and background suppression in the GERDA double beta decay experiment

    NASA Astrophysics Data System (ADS)

    Budjáš, Dušan; Barnabé Heider, Marik; Chkvorets, Oleg; Khanbekov, Nikita; Schönert, Stefan

    2009-10-01

    First studies of event discrimination with a Broad-Energy Germanium (BEGe) detector are presented. A novel pulse shape method, exploiting the characteristic electrical field distribution inside BEGe detectors, allows to identify efficiently single-site events and to reject multi-site events. The first are typical for neutrinoless double beta decays (0νββ) and the latter for backgrounds from gamma-ray interactions. The obtained survival probabilities of backgrounds at energies close to Qββ(76Ge) = 2039 keV are (0.93 ± 0.08)% for events from 60Co, (21 ± 3)% from 226Ra and (40 ± 2)% from 228Th. This background suppression is achieved with (89 ± 1)% acceptance of 228Th double escape events, which are dominated by single site interactions. Approximately equal acceptance is expected for 0νββ-decay events. Collimated beam and Compton coincidence measurements demonstrate that the discrimination is largely independent of the interaction location inside the crystal and validate the pulse-shape cut in the energy range of Qββ. The application of BEGe detectors in the GERDA and the Majorana double beta decay experiments is under study.

  1. Energy dependent chest wall thickness equations for male lung monitoring with germanium detectors.

    PubMed

    Broggio, D; Lechaftois, X; Abline, O; Fleury, B; Vial, A; Corrèze, P; Franck, D; Merzoug, V

    2014-03-01

    The thickness and fat fraction of the chest wall are important parameters for in vivo lung monitoring. They have been measured from ultrasonic images on 374 male workers of the French nuclear industry using four measurement locations, as dictated by the size and position of the germanium detectors used for monitoring. The plastic muscle equivalent chest wall thickness (PMECWT) and the plastic 50% muscle-50% adipose equivalent chest wall thickness (X5050) have been calculated for each worker at 17, 59.5, and 185.7 keV, respectively. Multi-linear regression models have been tested to predict PMECWT and X5050 as a function of anthropometric measurements. Finally, it was considered whether the average chest wall thickness could be used instead of the material equivalent chest wall thickness. It was found that the mean chest wall thickness was (27 ± 5) mm and the mean fat fraction was (25 ± 8)%. The best and more convenient model for material equivalent chest wall thickness is a linear function of the body mass index. Depending on the energy, the standard errors of estimate for this model range between 3.2-3.4 mm for PMECWT and between 3.2-3.7 mm for X5050. At 59.5 and 185.7 keV, it was determined, to an excellent approximation, that the fat fraction and consideration of an equivalent material are unnecessary, contrary to the case at 17 keV.

  2. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging.

    PubMed

    Campbell, D L; Peterson, T E

    2014-11-21

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  3. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    PubMed Central

    Campbell, DL; Peterson, TE

    2014-01-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140-keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a −5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time. PMID:25360792

  4. Features of the stress-strain state of Si/SiO{sub 2}/Ge heterostructures with germanium nanoislands of a limited density

    SciTech Connect

    Kuryliuk, V. V. Korotchenkov, O. A.

    2013-08-15

    Within the elastic continuum model, with the use of the finite-element method, the stress-strain state of silicon-germanium heterostructures with semispherical germanium islands grown on an oxidized silicon surface is calculated. It is shown that as the density of islands is increased to limiting values, in the SiGe structure with open quantum dots the value and spatial distribution of the elastic-strain fields significantly change. The results of theoretical calculation allow the heterostructure portions with the maximum variation in the stress-strain state to be determined. The position of such a portions can be controlled by changing the density of islands.

  5. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  6. Detector development for Jefferson Lab's 12 GeV Upgrade

    NASA Astrophysics Data System (ADS)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab's Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  7. Detector development for Jefferson Lab's 12GeV Upgrade

    SciTech Connect

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  8. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE PAGESBeta

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  9. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  10. Mechanisms of Si and Ge diffusion on surfactant terminated (111) silicon and germanium surfaces

    NASA Astrophysics Data System (ADS)

    Zhachuk, R.; Coutinho, J.

    2016-05-01

    Surfactant mediated growth of Ge layers and formation of small Ge clusters on Si(111) are promising assemblage processes with envisioned applications in areas such as nanoelectronics or photovoltaics. They critically depend on migration of Si and Ge adatoms on surfactant terminated Si(111) and Ge(111) surfaces. We address Si and Ge adsorption and migration on surfactant (Bi, Sb) terminated (111) surfaces of Si and strained Ge by comprehensively mapping potential energy surfaces using density functional calculations. The main migration paths are identified and corresponding energy barriers are reported. It is shown that the energy barrier for adatom migration through Bi or Sb surfactant trimers (by actually breaking the trimers) is virtually degenerate to the mechanism involving traveling of the adatom around the same surfactant structures. We also find a low-energy anchoring site that is suggested to act as a nucleation structure and to trigger the clustering process. These results suggest a fundamentally new picture for the whole Si(111)sbnd Bi(Sb) epitaxial process.

  11. Development of ultra pure germanium epi layers for blocked impurity band far infrared detectors

    SciTech Connect

    Lutz, M.P.

    1991-05-01

    The main goals of this paper are: (1) To develop a low-pressure CVD (LPCVD) process that allows epitaxial growth at lower temperatures. Lower temperatures will allow the achievement of a sharp dopant profile at the substrate/epi-layer interface. Less out-diffusion from the substrate would allow the use of thinner epitaxial layers, which would lead to a larger depletion width in the photoactive region. LPCVD also avoids, to a great extent, gas-phase nucleation, which would cause Ge particulates to fall onto the wafer surface during growth. (2) To reduce high levels of oxygen and copper present at the wafer interface, as observed by secondary ion mass spectroscopy (SIMS). In order to achieve high-quality epitaxial layers, it is imperative that the substrate surface be of excellent quality. (3) To make and test detectors, after satisfactory epitaxial layers have been made.

  12. A search for particle dark matter using cryogenic germanium and silicon detectors in the one- and two- tower runs of CDMS-II at Soudan

    SciTech Connect

    Reuben Walter Ogburn, IV

    2008-06-01

    Images of the Bullet Cluster of galaxies in visible light, X-rays, and through gravitational lensing confirm that most of the matter in the universe is not composed of any known form of matter. The combined evidence from the dynamics of galaxies and clusters of galaxies, the cosmic microwave background, big bang nucleosynthesis, and other observations indicates that 80% of the universe's matter is dark, nearly collisionless, and cold. The identify of the dar, matter remains unknown, but weakly interacting massive particles (WIMPs) are a very good candidate. They are a natural part of many supersymmetric extensions to the standard model, and could be produced as a nonrelativistic, thermal relic in the early universe with about the right density to account for the missing mass. The dark matter of a galaxy should exist as a spherical or ellipsoidal cloud, called a 'halo' because it extends well past the edge of the visible galaxy. The Cryogenic Dark Matter Search (CDMS) seeks to directly detect interactions between WIMPs in the Milky Way's galactic dark matter halo using crystals of germanium and silicon. Our Z-sensitive ionization and phonon ('ZIP') detectors simultaneously measure both phonons and ionization produced by particle interactions. In order to find very rare, low-energy WIMP interactions, they must identify and reject background events caused by environmental radioactivity, radioactive contaminants on the detector,s and cosmic rays. In particular, sophisticated analysis of the timing of phonon signals is needed to eliminate signals caused by beta decays at the detector surfaces. This thesis presents the firs two dark matter data sets from the deep underground experimental site at the Soudan Underground Laboratory in Minnesota. These are known as 'Run 118', with six detectors (1 kg Ge, 65.2 live days before cuts) and 'Run 119', with twelve detectors (1.5 kg Ge, 74.5 live days before cuts). They have analyzed all data from the two runs together in a single

  13. Results from a search for light-mass dark matter with a p-type point contact germanium detector.

    PubMed

    Aalseth, C E; Barbeau, P S; Bowden, N S; Cabrera-Palmer, B; Colaresi, J; Collar, J I; Dazeley, S; de Lurgio, P; Fast, J E; Fields, N; Greenberg, C H; Hossbach, T W; Keillor, M E; Kephart, J D; Marino, M G; Miley, H S; Miller, M L; Orrell, J L; Radford, D C; Reyna, D; Tench, O; Van Wechel, T D; Wilkerson, J F; Yocum, K M

    2011-04-01

    We report on several features in the energy spectrum from an ultralow-noise germanium detector operated deep underground. By implementing a new technique able to reject surface events, a number of cosmogenic peaks can be observed for the first time. We discuss an irreducible excess of bulklike events below 3 keV in ionization energy. These could be caused by unknown backgrounds, but also dark matter interactions consistent with DAMA/LIBRA. It is not yet possible to determine their origin. Improved constraints are placed on a cosmological origin for the DAMA/LIBRA effect.

  14. Rapid thermal annealing of Si 1- xGe x layers formed by germanium ion implantation

    NASA Astrophysics Data System (ADS)

    Xia, Z.; Saarilahti, J.; Ronkainen, H.; Eränen, S.; Suni, I.; Molarius, J.; Kuivalainen, P.; Ristolainen, E.; Tuomi, T.

    1994-05-01

    (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge + ions at doses of the order of 1 × 10 16cm -2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time ( T- t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16O(α,α) 16O RBS resonance channeling and SIMS.

  15. Metastable crystalline AuGe catalysts formed during isothermal germanium nanowire growth.

    PubMed

    Gamalski, A D; Tersoff, J; Sharma, R; Ducati, C; Hofmann, S

    2012-06-22

    We observe the formation of metastable AuGe phases without quenching, during strictly isothermal nucleation and growth of Ge nanowires, using video-rate lattice-resolved environmental transmission electron microscopy. We explain the unexpected formation of these phases through a novel pathway involving changes in composition rather than temperature. The metastable catalyst has important implications for nanowire growth, and more broadly, the isothermal process provides both a new approach to growing and studying metastable phases, and a new perspective on their formation.

  16. A search for particle dark matter using cryogenic germanium and silicon detectors in the one- and two-tower runs of CDMS-II at Soudan

    NASA Astrophysics Data System (ADS)

    Ogburn, Reuben Walter, IV

    Images of the Bullet Cluster of galaxies in visible light, X-rays, and through gravitational lensing confirm that most of the matter in the universe is not composed of any known form of matter. The combined evidence from the dynamics of galaxies and clusters of galaxies, the cosmic microwave background, big bang nucleosynthesis, and other observations indicates that 80% of the universe's matter is dark, nearly collisionless, and cold. The identity of the dark matter remains unknown, but weakly interacting massive particles (WIMPs) are a very good candidate. They are a natural part of many supersymmetric extensions to the standard model, and could be produced as a nonrelativistic, thermal relic in the early universe with about the right density to account for the missing mass. The dark matter of a galaxy should exist as a spherical or ellipsoidal cloud, called a "halo" because it extends well past the edge of the visible galaxy. The Cryogenic Dark Matter Search (CDMS) seeks to directly detect interactions between WIMPs in the Milky Way's galactic dark matter halo using crystals of germanium and silicon. Our Z-sensitive ionization and phonon ("ZIP") detectors simultaneously measure both phonons and ionization produced by particle interactions. In order to find very rare, low-energy WIMP interactions, we must identify and reject background events caused by environmental radioactivity, radioactive contaminants on the detectors, and cosmic rays. In particular, sophisticated analysis of the timing of phonon signals is needed to eliminate signals caused by beta decays at the detector surfaces. This thesis presents the first two dark matter data sets from the deep underground experimental site at the Soudan Underground Laboratory in Minnesota. These are known as "Run 118," with six detectors (1 kg Ge, 65.2 live days before cuts) and "Run 119," with twelve detectors (1.5 kg Ge, 74.5 live days before cuts). We have analyzed all data from the two runs together in a single

  17. Synthesis and the crystal and molecular structure of the germanium(IV) complex with propylene-1,3-diaminetetraacetic acid [Ge( Pdta)

    NASA Astrophysics Data System (ADS)

    Sergienko, V. S.; Martsinko, E. E.; Seifullina, I. I.; Churakov, A. V.; Chebanenko, E. A.

    2015-09-01

    The germanium(IV) complex with propylene-1,3-diaminetetraacetic acid (H4 Pdta) is studied by elemental analysis, X-ray diffraction, thermogravimetry, and IR spectroscopy. The X-ray diffraction study reveals two crystallographically independent [Ge( Pdta)] molecules of similar structure. Both Ge atoms are octahedrally coordinated by four O atoms and two N atoms (at the cis positions) of the hexadentate pentachelate Pdta 4- ligand. An extended system of weak С—Н···О hydrogen bonds connects complex molecules into a supramolecular 3D framework.

  18. Synthesis and the crystal and molecular structure of the germanium(IV) complex with propylene-1,3-diaminetetraacetic acid [Ge(Pdta)

    SciTech Connect

    Sergienko, V. S.; Martsinko, E. E.; Seifullina, I. I.; Churakov, A. V.; Chebanenko, E. A.

    2015-09-15

    The germanium(IV) complex with propylene-1,3-diaminetetraacetic acid (H{sub 4}Pdta) is studied by elemental analysis, X-ray diffraction, thermogravimetry, and IR spectroscopy. The X-ray diffraction study reveals two crystallographically independent [Ge(Pdta)] molecules of similar structure. Both Ge atoms are octahedrally coordinated by four O atoms and two N atoms (at the cis positions) of the hexadentate pentachelate Pdta{sup 4–} ligand. An extended system of weak C—H···O hydrogen bonds connects complex molecules into a supramolecular 3D framework.

  19. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    NASA Astrophysics Data System (ADS)

    Heusser, G.; Weber, M.; Hakenmüller, J.; Laubenstein, M.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H.

    2015-11-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100 \\upmu Bq kg^{-1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  20. Syntheses, structures, and optical properties of the indium/germanium selenides Cs{sub 4}In{sub 8}GeSe{sub 16}, CsInSe{sub 2}, and CsInGeSe{sub 4}

    SciTech Connect

    Ward, Matthew D.; Pozzi, Eric A.; Van Duyne, Richard P.; Ibers, James A.

    2014-04-01

    The three solid-state indium/germanium selenides Cs{sub 4}In{sub 8}GeSe{sub 16}, CsInSe{sub 2}, and CsInGeSe{sub 4} have been synthesized at 1173 K. The structure of Cs{sub 4}In{sub 8}GeSe{sub 16} is a three-dimensional framework whereas those of CsInSe{sub 2} and CsInGeSe{sub 4} comprise sheets separated by Cs cations. Both Cs{sub 4}In{sub 8}GeSe{sub 16} and CsInGeSe{sub 4} display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced. - Graphical abstract: Structure of Cs{sub 4}In{sub 8}GeSe{sub 16}. - Highlights: • The solid-state In/Ge selenides Cs{sub 4}In{sub 8}GeSe{sub 16}, CsInSe{sub 2}, and CsInGeSe{sub 4} have been synthesized. • Both Cs{sub 4}In{sub 8}GeSe{sub 16} and CsInGeSe{sub 4} display In/Ge disorder. • Cs{sub 4}In{sub 8}GeSe{sub 16} and CsInGeSe{sub 4} have band gaps of 2.20 eV and 2.32 eV, respectively.

  1. Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

    NASA Astrophysics Data System (ADS)

    Shih, Grace Hwei-Pyng

    Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

  2. Experimental study of the complexation of silicon and germanium with aqueous organic species: Implications for germanium and silicon transport and Ge/Si ratio in natural waters

    SciTech Connect

    Pokrovski, G.S.; Schott, J.

    1998-11-01

    The stability of aqueous complexes formed by Si and Ge with carboxylic acids (acetic, salicyclic, oxalic, citric, tartaric) and phenols (phenol and catechol) has been investigated from 25 to 90 C via solubility and potentiometric measurements. Results show that Ge forms stable complexes with the di- and tricarboxylic acids and catechol, but that Si forms much weaker complexes with these ligands. Analysis of results and of available literature data on Ge complexes formed with other types of aqueous organic species demonstrates that Ge forms complexes of chelate type with the following functional groups: (1) carboxylic in acid solutions (1 {le} pH {le} 6), (2) di-phenolic hydroxyls in neutral and basic solutions (pH {ge} 6), and (3) alcoholic hydroxyls in very basic solutions (pH {ge} 10). Conversely, Si forms very weak complexes with these compounds. Stability constants generated in this study for Ge- and Si-organic species have been used to approximate Ge and Si complexing with humic acids which possess the same organic functional groups as those used in this study. Calculations show that Si-humic acid complexes are negligible in most natural waters. In contrast, the presence of humic acids can considerably affect Ge speciation in aqueous solution. For example, at pH {ge} 6 in a solution containing 0.1 {micro}g/L of Ge and 20 mg/L of dissolved organic carbon (DOC), Ge-humic acid complexes account for more than 95% of total aqueous Ge. These results can explain the increase of the Ge/Si ratio in organic-rich surficial waters Ge-organic matter complexation should be thus taken into account when using Ge/Si ratios measured in surface waters and biogenic opals to estimate chemical-weathering intensity and Ge and Si global fluxes.

  3. Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

    DOE PAGESBeta

    Aguayo, E.; Amman, M.; Avignone, F. T.; Barabash, A. S.; Barton, P. J.; Beene, J. R.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; et al

    2012-11-09

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Furthermore, experiments that operate germanium detectors with a verymore » low energy threshold may benefit from the methods presented herein.« less

  4. Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

    SciTech Connect

    Aguayo, E.; Amman, M.; Avignone, F. T.; Barabash, A. S.; Barton, P. J.; Beene, J. R.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Chan, Y. -D.; Christofferson, C. D.; Collar, J. I.; Combs, D. C.; Cooper, R. J.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Esterline, J.; Fast, J. E.; Fields, N.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Gehman, V. M.; Giovanetti, G. K.; Green, M. P.; Guiseppe, V. E.; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, R.; Hoppe, E. W.; Horton, M.; Howard, S.; Howe, M. A.; Johnson, R. A.; Keeter, K. J.; Kidd, M. F.; Knecht, A.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; Looker, Q.; Luke, P. N.; MacMullin, S.; Marino, M. G.; Martin, R. D.; Merriman, J. H.; Miller, M. L.; Mizouni, L.; Nomachi, M.; Orrell, J. L.; Overman, N. R.; Perumpilly, G.; Phillips, D. G.; Poon, A. W. P.; Radford, D. C.; Rielage, K.; Robertson, R. G. H.; Ronquest, M. C.; Schubert, A. G.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Steele, D.; Strain, J.; Timkin, V.; Tornow, W.; Varner, R. L.; Vetter, K.; Vorren, K.; Wilkerson, J. F.; Yakushev, E.; Yaver, H.; Young, A. R.; Yu, C. -H.; Yumatov, V.

    2012-11-09

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Furthermore, experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  5. Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

    NASA Technical Reports Server (NTRS)

    Bratt, P. R.; Lewis, N. N.; Long, L. E.

    1978-01-01

    The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

  6. Experimental study of the complexation of silicon and germanium with aqueous organic species: implications for germanium and silicon transport and Ge/Si ratio in natural waters

    NASA Astrophysics Data System (ADS)

    Pokrovski, Gleb S.; Schott, Jacques

    1998-11-01

    The stability of aqueous complexes formed by Si and Ge with carboxylic acids (acetic, salicylic, oxalic, citric, tartaric) and phenols (phenol and catechol) has been investigated from 25 to 90°C via solubility and potentiometric measurements. Results show that Ge forms stable complexes with the di- and tricarboxylic acids and catechol, but that Si forms much weaker complexes with these ligands. Analysis of our results and of available literature data on Ge complexes formed with other types of aqueous organic species demonstrates that Ge forms complexes of chelate type with the following functional groups: (1) carboxylic in acid solutions (1 ≤ pH ≤ 6), (2) di-phenolic hydroxyls in neutral and basic solutions (pH ≥ 6), and (3) alcoholic hydroxyls in very basic solutions (pH ≥ 10). Conversely, Si forms very weak complexes with these compounds. Stability constants generated in this study for Ge- and Si-organic species have been used to approximate Ge and Si complexing with humic acids which possess the same organic functional groups as those used in this study. Our calculations show that Si-humic acid complexes are negligible in most natural waters. In contrast, the presence of humic acids can considerably affect Ge speciation in aqueous solution. For example, at pH ≥ 6 in a solution containing and 0.1 μg/L of Ge and 20 mg/L of dissolved organic carbon (DOC), Ge-humic acid complexes account for more than 95% of total aqueous Ge. These results can explain the increase of the Ge/Si ratio in organic-rich surficial waters. Ge-organic matter complexation should be thus taken into account when using Ge/Si ratios measured in surface waters and biogenic opals to estimate chemical-weathering intensity and Ge and Si global fluxes.

  7. Progress report on the search for cold dark matter using ultralow-background germanium detectors at homestake

    NASA Astrophysics Data System (ADS)

    Drukier, A. K.; Avignone, F. T.; Brodzinski, R. L.; Collar, J. I.; Gelmini, G.; Miley, H. S.; Morales, A.; Reeves, J. H.; Spergel, D.

    1992-07-01

    Counting rates from the two 1-kg PNL/USC ultralow-background germanium detectors are ≤0.3 counts keV -1 kg -1 d -1 between 6 and 9 keV and ˜ 2 counts keV -1 kg -1 d -1 between 4 and 6 keV. These data show a significant short-time rate dependence due to blasting and other mining operations in the Homestake good mine. The mean shift in the centroid of the gallium x-ray peak was about 50 eV over a total period of about 500 days, indicating adequate stability for a search for annual modulation of Cold Dark Matter (CDM) particles.

  8. The use of a high-purity germanium detector for routine measurements of {sup 125}I in radiation workers

    SciTech Connect

    Kopp, P.; Bergmann, H.; Havlik, E.; Aiginger, H.; Unfried, E.; Riedlmayer, L.

    1994-12-01

    A high-purity germanium detector was calibrated for the assessment of {sup 125}I uptake in the thyroid gland of radiation workers. A cylindrical water phantom (perspex walls) with high flexibility for position and size of the thyroid was constructed. Within a massive shielding chamber built for a whole-body counter, an activity of 2.2 Bq was detectable (MDA). This is well below the very restrictive limiting value of 20 Bq for inhalation specified by Austrian law. An activity of 128 Bq was measured with a statistical uncertainty of 5% in a counting period of 10 min. Various parameters influencing the result are investigated as well as the performance of two other measurement geometries outside the shielding chamber. 13 refs., 4 figs., 2 tabs.

  9. Atomic ionization by sterile-to-active neutrino conversion and constraints on dark matter sterile neutrinos with germanium detectors

    NASA Astrophysics Data System (ADS)

    Chen, Jiunn-Wei; Chi, Hsin-Chang; Lin, Shin-Ted; Liu, C.-P.; Singh, Lakhwinder; Wong, Henry T.; Wu, Chih-Liang; Wu, Chih-Pan

    2016-05-01

    The transition magnetic moment of a sterile neutrino can give rise to its conversion to an active neutrino through radiative decay or nonstandard interaction (NSI) with matter. For sterile neutrinos of keV-mass as dark matter candidates, their decay signals are actively searched for in cosmic x-ray spectra. In this work, we consider the NSI that leads to atomic ionization, which can be detected by direct dark matter experiments. It is found that this inelastic scattering process for a nonrelativistic sterile neutrino has a pronounced enhancement in the differential cross section at energy transfer about half of its mass, manifesting experimentally as peaks in the measurable energy spectra. The enhancement effects gradually smear out as the sterile neutrino becomes relativistic. Using data taken with low-threshold low-background germanium detectors, constraints on sterile neutrino mass and its transition magnetic moment are derived and compared with those from astrophysical observations.

  10. Final Report for Monitoring of Reactor Antineutrinos with Compact Germanium Detectors

    SciTech Connect

    Orrell, John L.; Collar, J. I.

    2009-07-01

    This 2008 NCMR project has pursued measurement of the antineutrino-nucleus coherent scattering interaction using a low-energy threshold germanium gamma-ray spectrometer of roughly one-half kilogram total mass. These efforts support development of a compact system for monitoring the antineutrino emission from nuclear reactor cores. Such a monitoring system is relevant to nuclear safeguards and nuclear non-proliferation in general by adding a strong method for assuring quantitative material balance of special nuclear material in the nuclear fuel cycle used in electricity generation.

  11. Modeling of neutron spectrum in the gamma spectroscopy measurements with Ge-detectors

    NASA Astrophysics Data System (ADS)

    Knežević, D.; Jovančević, N.; Krmar, M.; Petrović, J.

    2016-10-01

    In this study, we present a novel approach for estimation of neutron spectra that are present during gamma spectroscopy measurements performed by a Ge detector. This method is based on the calculation of the neutron spectra by using an unfolding procedure, where the activity of the Ge isotopes, produced by the neutron reactions, and the available cross section data for those reactions are the input parameters. This new approach was tested by background gamma spectroscopy measurements with a HPGe detector. Obtained results show that this method can provide useful information about the neutron spectra at the position of the Ge detectors.

  12. Dermal absorption of inorganic germanium in rats.

    PubMed

    Yokoi, Katsuhiko; Kawaai, Takae; Konomi, Aki; Uchida, Yuka

    2008-11-01

    So-called germanium 'health' products including dietary supplements, cosmetics, accessories, and warm bath service containing germanium compounds and metalloid are popular in Japan. Subchronic and chronic oral exposure of germanium dioxide (GeO(2)), popular chemical form of inorganic germanium causes severe germanium toxicosis including death and kidney dysfunction in humans and experimental animals. Intestinal absorption of neutralized GeO(2) or germanate is almost complete in humans and animals. However, it is not known whether germanium is cutaneously absorbed. We tested dermal absorption of neutralized GeO(2) or germanate using male F344/N rats. Three groups of rats were treated with a 3-h topical application of hydrophilic ointment containing graded level of neutralized GeO(2) (pH 7.4): 0, 0.21 and 0.42 mg GeO(2)/g. Germanium concentration in blood and tissues sampled from rats after topical application of inorganic germanium was measured by inductively coupled plasma-mass spectrometry. Animals topically applied 0.42 mg GeO(2)/g ointment had significantly higher germanium concentrations in plasma, liver, and kidney than those of rats that received no topical germanium. The results indicate that skin is permeable to inorganic germanium ion or germanate and recurrent exposure of germanium compounds may pose a potential health hazard.

  13. Measurement of the cross sections for the production of the isotopes {sup 74}As, {sup 68}Ge, {sup 65}Zn, and {sup 60}Co from natural and enriched germanium irradiated with 100-MeV protons

    SciTech Connect

    Barabanov, I. R.; Bezrukov, L. B.; Gurentsov, V. I.; Zhuykov, B. L.; Kianovsky, S. V.; Kornoukhov, V. N.; Kohanuk, V. M.; Yanovich, E. A.

    2010-07-15

    The cross sections for the production of the radioactive isotopes {sup 74}As, {sup 68}Ge, {sup 65}Zn, and {sup 60}Co in metallic germanium irradiated with 100-MeV protons were measured, the experiments being performed both with germanium of natural isotopic composition and germanium enriched in the isotope {sup 76}Ge. The targets were irradiated with a proton beam at the facility for the production of radionuclides at the accelerator of the Institute for Nuclear Research (INR, Moscow). The data obtained will further be used to calculate the background of radioactive isotopes formed by nuclear cascades of cosmic-ray muons in new-generation experiments devoted to searches for the neutrinoless double-beta decay of {sup 76}Ge at underground laboratories.

  14. Simulations for Tracking Cosmogenic Activation in Germanium and Copper

    SciTech Connect

    Aguayo, Estanislao; Kouzes, Richard T.; Orrell, John L.

    2011-11-01

    High-purity germanium (HPGe) detectors housed in copper cryostats and shielding materials are used in measurements of the extraordinarily rare nuclear decay process, neutrinoless double-beta decay (0νββ), and for dark matter searches. Cosmogenic production of 68Ge and 60Co in the germanium and copper represent an irreducible background to these experiments as the subsequent decays of these isotopes can mimic the signals of interest. These radioactive isotopes can be removed by chemical and/or isotopic separation, but begin to grow-in to the material after separation until the material is moved deep underground. This work is motivated by the need to have a reliable, experimentally benchmarked simulation tool for evaluating shielding materials used during transportation and near-surface manufacturing of experiment components. The resulting simulations tool has been used to enhance the effectiveness of an existing transport shield used to ship enriched germanium from the separations facility to the detector manufacturing facility.

  15. Development of a hemispheric p-type point-contact Ge detector to verify hole drifting models in arbitrary direction

    NASA Astrophysics Data System (ADS)

    Liu, Jing; Mei, Dongming

    2016-03-01

    We propose to develop a hemispheric p-type point-contact high-purity germanium detector to verify experimentally hole drifting models in an arbitrary direction in the germanium crystal. It would be the first of its kind in the world with such a unique geometry. Calibrated low energy gamma ray sources will be used to deposit energy close to the outer surface of the detector. Electron-hole pairs will be created there. Holes will be drifted from the surface all the way to the point contact along any chosen direction. Amorphous germanium will be used to replace commonly used Lithium-diffused surface to remove the surface effect on the measurements. Such a detector would provide direct measurements of hole drift mobilities in all directions, which can be used to verify current hole drifting models. Those models are heavily used in pulse-shape simulations for neutrinoless double beta experiments using germanium detector arrays. The verification of them would significantly improve the understanding of the behavior of holes in germanium detectors and reduce the uncertainty of detection efficiency estimated by the pulse-shape simulation packages.

  16. The effects of exogenous antioxidant germanium (Ge) on seed germination and growth of Lycium ruthenicum Murr subjected to NaCl stress.

    PubMed

    Liu, Yan; Hou, Long-yu; Li, Qing-mei; Jiang, Ze-ping; Liu, Duo; Zhu, Yan

    2016-01-01

    In this paper, we present the results of a study on the effects of exogenous antioxidant germanium (Ge) on seed germination and seedling growth, and its role as a radical scavenger that regulates related enzymes, including superoxide dismutase (SOD), peroxidase (POD) and catalase (CAT), under salt stress. Seeds were incubated in 0, 50, 100, 150, 200, 250 and 300 mM NaCl to determine the salt tolerance of the Lycium ruthenicum Murr seedlings and from the results, the critical and ultimate salt concentrations were chosen for the next experiment. Subsequently, two treatments (seeds soaked in Ge and Ge added to salt) with four concentrations of GeO2 (0, 5, 10 and 20 μM) were used with the critical (150 mM) and ultimate salt concentrations (250 mM). The results demonstrated that salt alone inhibited seed germination significantly (≥150 mM) and reduced seedling growth (≥200 mM). The addition of exogenous Ge to the salt solution, as well as soaking the seeds in Ge, attenuated the salt stress effects in a manner dependent on the dose of Ge, as indicated by the increased percentage of seeds that germinated and improved seedling growth. The addition of Ge also showed a significant reversal of salt stress on the activities of antioxidant enzymes, with a decrease in SOD and POD activity, but an increase in CAT activity with 150 mM NaCl, and enhancement of SOD, POD and CAT with 250 mM NaCl. Correspondingly, the level of malondialdehyde was decreased significantly by each Ge treatment under salt stress. Further, for L. ruthenicum, adding 10 Ge and seeds soaked in 5 Ge were the most effective treatments. To our knowledge, this is the first report to show the protective effects of exogenous Ge against salt-induced oxidative damage in L. ruthenicum seed germination and seedling growth. Thus, L. ruthenicum can be used in areas with salty soil and Ge can promote the plants' salt tolerance. PMID:26360466

  17. Segmented Ge detectors and mechanical coolers for future gamma-ray astronomy instruments

    NASA Technical Reports Server (NTRS)

    Varnell, Larry S.

    1990-01-01

    The effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity is demonstrated by a laboratory experiment in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 in the detector itself, Ge-75, which decays by beta emission with a maximum energy of 1188 keV. Simultaneous spectra are taken of the activity in the detector under two conditions: a free spectrum in which all events in the detector are accumulated, and a gated spectrum in which events are accumulated only if they deposit energy in two or more segments. A comparison of the spectra shows that over 85 percent of the beta events are rejected, which is in good agreement with predictions.

  18. Mineral commodity profiles: Germanium

    USGS Publications Warehouse

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  19. Germanium-76 Sample Analysis: Revision 3

    SciTech Connect

    Kouzes, Richard T.; Zhu, Zihua; Engelhard, Mark H.

    2011-09-19

    The MAJORANA DEMONSTRATOR is a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0{nu}{beta}{beta}). The DEMONSTRATOR will utilize 76Ge from Russia. The first one-gram sample was received from the supplier for analysis on April 24, 2011. The second one-gram sample was received from the supplier for analysis on July 12, 2011. The third sample, which came from the first large shipment of germanium from the vendor, was received from Oak Ridge National Laboratory (ORNL) on September 13, 2011. The Environmental Molecular Sciences facility, a DOE user facility at PNNL, was used to make the required isotopic and chemical purity measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR. The results of these analyses are reported here. The isotopic composition of a sample of natural germanium was also measured twice. Differences in the result between these two measurements led to a re-measurement of the second 76Ge sample.

  20. Limits on Spin-independent Couplings of Light Dark Matter WIMPs with a p-type Point-contact Germanium Detector

    NASA Astrophysics Data System (ADS)

    Lin, S. T.; Wong, H. T.

    New limits on spin-independent WIMP-nucleon coupling using 39.5 kg-days of data taken with a p-type point-contact germanium detector with fiducial mass of 840 g at the Kuo-Sheng Reactor Neutrino Laboratory (KSNL) is presented. Charactering and understanding the anomalous surface behaviour is of particular significance to this study. The slow rise-time of surface events is identified via software pulse shape analysis techniques. In addition, the signal-retaining and background-rejecting efficiencies are implied to clarify the actual bulk and surface events in the mixed regime at sub-keV range. Both efficiencies are evaluated with calibration sources and a novel n-type point-contact germanium detector. Efficiencies-corrected background spectra from the low-background facility at KSNL are derived. Part of the parameter space in cross-section versus WIMP-mass is probed and excluded.

  1. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    SciTech Connect

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  2. Neutron Damage in Mechanically-Cooled High-Purity Germanium Detectors for Field-Portable Prompt Gamma Neutron Activation Analysis (PGNAA) Systems

    SciTech Connect

    E.H. Seabury; C.J. Wharton; A.J. Caffrey; J.B. McCabe; C. DeW. Van Siclen

    2013-10-01

    Prompt Gamma Neutron Activation (PGNAA) systems require the use of a gamma-ray spectrometer to record the gamma-ray spectrum of an object under test and allow the determination of the object’s composition. Field-portable systems, such as Idaho National Laboratory’s PINS system, have used standard liquid-nitrogen-cooled high-purity germanium (HPGe) detectors to perform this function. These detectors have performed very well in the past, but the requirement of liquid-nitrogen cooling limits their use to areas where liquid nitrogen is readily available or produced on-site. Also, having a relatively large volume of liquid nitrogen close to the detector can impact some assessments, possibly leading to a false detection of explosives or other nitrogen-containing chemical. Use of a mechanically-cooled HPGe detector is therefore very attractive for PGNAA applications where nitrogen detection is critical or where liquid-nitrogen logistics are problematic. Mechanically-cooled HPGe detectors constructed from p-type germanium, such as Ortec’s trans-SPEC, have been commercially available for several years. In order to assess whether these detectors would be suitable for use in a fielded PGNAA system, Idaho National Laboratory (INL) has been performing a number of tests of the resistance of mechanically-cooled HPGe detectors to neutron damage. These detectors have been standard commercially-available p-type HPGe detectors as well as prototype n-type HPGe detectors. These tests compare the performance of these different detector types as a function of crystal temperature and incident neutron fluence on the crystal.

  3. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    SciTech Connect

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  4. Final Technical Report for DUSEL Research and Development on Sub-Kelvin Germanium Detectors for Ton Scale Dark Matter Search

    SciTech Connect

    Cabrera, Blas

    2012-09-10

    We have supported one graduate student and a small percentage of fabrication staff on $135k per year for three years plus one no cost extension year on this DUSEL R&D grant. There were three themes within our research program: (1) how to improve the radial sensitivity for single sided phonon readout with four equal area sensors of which three form a central circle and fourth a surrounding ring; (2) how to instrument double sided phonon readouts which will give us better surface event rejection and increased fiducial volume for future CDMS style detectors; and (3) can we manufacture much larger Ge detectors using six inch diameter material which is not suitable for standard gamma ray spectroscopy.

  5. The {sup 14}N(p,{gamma}){sup 15}O reaction studied with a composite germanium detector

    SciTech Connect

    Marta, M.; Bemmerer, D.; Formicola, A.; Gustavino, C.; Junker, M.; Broggini, C.; Menegazzo, R.; Rossi Alvarez, C.; Caciolli, A.; Corvisiero, P.; Costantini, H.; Lemut, A.; Prati, P.; Elekes, Z.; Fueloep, Zs.; Gyuerky, Gy.; Somorjai, E.; Gervino, G.; Guglielmetti, A.; Mazzocchi, C.

    2011-04-15

    The rate of the carbon-nitrogen-oxygen (CNO) cycle of hydrogen burning is controlled by the {sup 14}N(p,{gamma}){sup 15}O reaction. The reaction proceeds by capture to the ground states and several excited states in {sup 15}O. In order to obtain a reliable extrapolation of the excitation curve to astrophysical energy, fits in the R-matrix framework are needed. In an energy range that sensitively tests such fits, new cross-section data are reported here for the four major transitions in the {sup 14}N(p,{gamma}){sup 15}O reaction. The experiment has been performed at the Laboratory for Underground Nuclear Astrophysics (LUNA) 400-kV accelerator placed deep underground in the Gran Sasso facility in Italy. Using a composite germanium detector, summing corrections have been considerably reduced with respect to previous studies. The cross sections for capture to the ground state and to the 5181, 6172, and 6792 keV excited states in {sup 15}O have been determined at 359, 380, and 399 keV beam energy. In addition, the branching ratios for the decay of the 278-keV resonance have been remeasured.

  6. New approach to calculate the true-coincidence effect of HpGe detector

    NASA Astrophysics Data System (ADS)

    Alnour, I. A.; Wagiran, H.; Ibrahim, N.; Hamzah, S.; Siong, W. B.; Elias, M. S.

    2016-01-01

    The corrections for true-coincidence effects in HpGe detector are important, especially at low source-to-detector distances. This work established an approach to calculate the true-coincidence effects experimentally for HpGe detectors of type Canberra GC3018 and Ortec GEM25-76-XLB-C, which are in operation at neutron activation analysis lab in Malaysian Nuclear Agency (NM). The correction for true-coincidence effects was performed close to detector at distances 2 and 5 cm using 57Co, 60Co, 133Ba and 137Cs as standard point sources. The correction factors were ranged between 0.93-1.10 at 2 cm and 0.97-1.00 at 5 cm for Canberra HpGe detector; whereas for Ortec HpGe detector ranged between 0.92-1.13 and 0.95-100 at 2 and 5 cm respectively. The change in efficiency calibration curve of the detector at 2 and 5 cm after correction was found to be less than 1%. Moreover, the polynomial parameters functions were simulated through a computer program, MATLAB in order to find an accurate fit to the experimental data points.

  7. An Experimental Study of Germanium Sorption on Organic Matter and its Implications for Ge/Si Ratios in Natural Waters

    NASA Astrophysics Data System (ADS)

    Parsons, R. L.; Galy, A.

    2010-12-01

    The behavior of Ge in natural systems has received significant attention owing to the fact that while it behaves similarly to Si, Ge/Si ratios are fractionated by several processes in continental and marine environments. Ge/Si ratios can thus be used as a tracer of silicate weathering processes and of silica cycling. Ge/Si fractionation is thought to result from inorganic processes driven by enrichment of Ge in secondary clay minerals and/or iron oxy-hydroxides, and by biogenic silica cycling. Effective use of the Ge/Si tracer depends on how well we can constrain Ge cycling relative to Si in natural systems. Ge is notably more organophilic than Si, and, despite pervasive interest in the Ge/Si tracer, little is known about the role of naturally-occurring OM in Ge cycling. To gain more insight into the controls on Ge-OM interactions and their role in Ge/Si fractionation, we conducted batch experiments focused on Ge and Si sorption on the marine macroalga Ulva lactuca. Solutions containing Ge and/or Si were reacted with a powdered U. lactuca BCR Certified Reference Material. Sorption experiments were carried out as a function of initial Ge concentration (1-150 μM), pH (4-10), salinity (achieved by varying the volume fraction of artificially prepared seawater) and reaction time (7 min-72 hrs). In all experiments, Ge sorption increased with reaction time attaining “steady-state” after ~24 hrs. Changes in Ge sorption were most significant with changes in pH and salinity. The percentage of Ge sorbed increased with pH from pH 5-9, reached a maximum at pH 9 and slightly decreased as pH increased to 10. Experiments run at varying salinities generally show decreased Ge sorption at high salinity. This salinity dependence of Ge sorption is much less prominent when pH and salinity are varied concurrently. We examined Ge sorption as a function of both pH and salinity using seawater-freshwater mixing experiments designed to approximate chemical conditions in estuarine and

  8. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas

  9. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge-sink

    NASA Astrophysics Data System (ADS)

    King, S. L.; Froelich, P. N.; Jahnke, R. A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41°S and 53°S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with "classic" vs. "burn-down" behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that authigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO 2 and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pore water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from ˜1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire "missing" Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si ratio released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si ≈ 0.7 × 10 -6). In contrast, Ge/Si flux ratios in areas with low silicate fluxes are Ge

  10. Germanium isotope fractionation during Ge adsorption on goethite and its coprecipitation with Fe oxy(hydr)oxides

    NASA Astrophysics Data System (ADS)

    Pokrovsky, Oleg S.; Galy, Albert; Schott, Jacques; Pokrovski, Gleb S.; Mantoura, Samia

    2014-04-01

    Isotopic fractionation of Ge was studied during Ge adsorption on goethite and its coprecipitation with amorphous Fe oxy(hydr)oxides. Regardless of the pH, surface concentration of adsorbed Ge or exposure time, the solution-solid enrichment factor for adsorption (Δ74/70Gesolution-solid) was 1.7 ± 0.1‰. The value of the Δ74Gesolution-solid in Fe-Ge coprecipitates having molar ratio 0.1 < (Ge/Fe)solid < 0.5 remained constant at 2.0 ± 0.4‰. For (Ge/Fe)solid ratio < 0.1, the Δ74Gesolution-solid increased with the decrease of Ge concentration in the solid phase, with the value as high as 4.4 ± 0.2‰ at (Ge/Fe)solid < 0.001, corresponding to the majority of natural settings. These results can be interpreted based on available structural data for adsorbed and coprecipitated Ge. It follows that Ge(OH)4° adsorption occurring as bidentate binuclear complexes at the goethite surface is characterised by an enrichment factor of ∼1.7‰, likely related to the distortion of the GeO4 tetrahedron and the formation of Ge-O-Fe bonds at the goethite surface as compared to aqueous solution. In contrast, coprecipitation yields more distorted edge-sharing GeO4 tetrahedra and, in the case of the most diluted samples, part of the Ge is found in coordination 6, replacing Fe(III) in octahedral positions. This produces a greater enrichment of the solid phase in lighter isotopes, mostly due to the increase in Ge-O bond distances and coordination number compared to aqueous solution, which is in line with the basic principles of isotope fractionation. Discharge of hydrothermal fluids, leading to massive Fe(OH)3 precipitation in the vicinity of the springs should, therefore, represent an isotopically-heavy source of dissolved Ge to the ocean. Similarly, groundwater discharge and Fe(OH)3 precipitation at the Earth’s surface, Fe oxy(hydr)oxide formation in soils and riverine organo-ferric colloids coagulation, leading to iron hydroxide precipitation in estuaries, should produce an

  11. Cross sections for {sup 68}Ge production in natural- and enriched-germanium targets irradiated with protons of energy 100 MeV and background in experiments devoted to searches for the 2{beta}0{nu} decay of {sup 76}Ge

    SciTech Connect

    Barabanov, I. R. Bezrukov, L. B.; Kianovsky, S. V.; Kornoukhov, V. N.

    2010-11-15

    The rate of {sup 68}Ge production at sea level under the effect of the nuclear component of cosmic rays is calculated. The calculation is based on the experimental values of the cross sections for {sup 68}Ge production in natural- and enriched-germanium targets (enrichment in {sup 76}Ge) irradiated with high-energy protons. The background from the decays of {sup 68}Ge can be a serious problem in new-generation experiments devoted to searches for the 2{beta}0{nu} decay of {sup 76}Ge.

  12. Advanced far infrared detector and double donor studies in Ge

    SciTech Connect

    Olsen, C.S.

    1994-12-01

    This has application to astronomy and astrophysics. Selenium in Ge has been studied with a doping technique which limits complex formation. Only one ionization level has been found to correspond to selenium, which presumably occupies a substitutional site. This level is extremely unstable and its concentration decreases after annealing at 400C. Future work is planned to anneal the fast neutron damage before much selenium has formed in the {sup 74/76}Ge samples. It is expected that the observed selenium level can be better characterized and the missing selenium level is more likely to be discovered if other defects are removed before {sup 77}Se formation.

  13. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  14. Voltage-Assisted Calorimetric Detection of Gamma Interactions in a Prototype Cryogenic Ge Detector of the EDELWEISS Collaboration for Dark Matter Search

    NASA Astrophysics Data System (ADS)

    Broniatowski, A.; Piro, M.-C.; Marnieros, S.; Bergé, L.; Dumoulin, L.; Chapellier, M.

    2016-07-01

    As a part of an R&D program to improve the sensitivity of its detectors to low-mass (<10 GeV) weakly interacting massive particles, the Edelweiss dark matter collaboration is developing cryogenic ionization-and-heat coplanar grid germanium detectors, operated in a high-bias mode where advantage is taken of the voltage-assisted amplification of the ionization signals for enhanced sensitivity to low-energy (detector, capable of sustaining collection voltages up to 180 V with a corresponding gain of 60 in the heat measurement channel for electron recoil interactions. Event populations are analyzed based on ionization and heat data and on computer modeling of the detector signals, and a tentative interpretation of the results for the heat resolution is presented, involving athermal ballistic phonon losses in the device with consequent fluctuations in the thermometer response to the energy deposit of a particle.

  15. 226Ra as a standard source for efficiency calibration of Ge(Li) detectors

    NASA Astrophysics Data System (ADS)

    Farouk, M. A.; Al-Soraya, A. M.

    1982-09-01

    The relative intensities of gamma-rays resulting from the decay of 226Ra in equilibrium with its short-lived daughters have been measured using two different high resolution Ge(Li) detectors. The accuracy of the measurements does not exceed 2.5%. The most intense components of gamma-rays from thin 226Ra are recommended for use as a calibration standard Ge(Li) detectors in the energy range from 186 keV to 3.050 MeV.

  16. Pulse-Shape Analysis of Ionization Signals in Cryogenic Ge Detectors for Dark Matter

    NASA Astrophysics Data System (ADS)

    Foerster, N.; Broniatowski, A.; Eitel, K.; Marnieros, S.; Paul, B.; Piro, M.-C.; Siebenborn, B.

    2016-08-01

    The detectors of the direct dark matter search experiment EDELWEISS consist of high-purity germanium crystals operated at cryogenic temperatures (mathrm {{<}20 mK}) and low electric fields (mathrm {{<}1 V/cm}). The surface discrimination is based on the simultaneous measurement of the charge amplitudes on different sets of electrodes. As the rise time of a charge signal strongly depends on the location of an interaction in the crystal, a time-resolved measurement can also be used to identify surface interactions. This contribution presents the results of a study of the discrimination power of the rise time parameter from a hot carrier transport simulation in combination with time-resolved measurements using an EDELWEISS-type detector in a test cryostat at ground level. We show the setup for the time-resolved ionization signal read-out in the EDELWEISS-III experiment and first results from data taking in the underground laboratory of Modane.

  17. The mineralogical deportment of germanium in the Clarksville Electrolytic Zinc Plant of Savage Zinc Inc.

    SciTech Connect

    Dutrizac, J.E.; Chen, T.T.; Longton, R.J.

    1996-08-01

    Germanium is a strategic element which is widely used for infrared night vision systems, fiber optics, gamma-ray detectors, semiconductors, catalysts, and phosphors. Germanium is recovered from the dusts and residues generated during the processing of certain complex Zn-Cu-Pb sulfide ores or low-temperature sphalerite ores. A mineralogical study was carried out on the neutral leach residue and weak acid leach residue generated from Gordonsville zinc concentrate at the Clarksville Electrolytic Zinc Plant of Savage Zinc Inc. The intent was to characterize the mineral forms and associations of germanium. The Gordonsville zinc concentrate consists mostly of sphalerite which has a solid solution Ge content of {approximately} 400 ppm; the sphalerite is the dominant, if not only, Ge carrier in the concentrate. The major Ge carrier in the neutral residue is the iron gel-silica gel phase, but modest amounts of Ge are present in the ZnO, ZnFe{sub 2}O{sub 4}, sphalerite, and Zn-Fe-Pb silicate phases. The major Ge carrier in the acid residue is the iron gel-silica gel phase which contains up to 1.7% Ge and accounts for {approximately} 70% of the total Ge content of this residue. The remaining Ge is carried by the Zn-Fe-Pb silicate, ZnFe{sub 2}O{sub 4}, and some of the rare Mn-Pb-Fe oxide phases.

  18. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    SciTech Connect

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  19. Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires

    NASA Astrophysics Data System (ADS)

    Biswas, Subhajit; Doherty, Jessica; Saladukha, Dzianis; Ramasse, Quentin; Majumdar, Dipanwita; Upmanyu, Moneesh; Singha, Achintya; Ochalski, Tomasz; Morris, Michael A.; Holmes, Justin D.

    2016-04-01

    The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour-liquid-solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230 °C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth.

  20. Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

    PubMed Central

    Biswas, Subhajit; Doherty, Jessica; Saladukha, Dzianis; Ramasse, Quentin; Majumdar, Dipanwita; Upmanyu, Moneesh; Singha, Achintya; Ochalski, Tomasz; Morris, Michael A.; Holmes, Justin D.

    2016-01-01

    The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1−xSnx alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour–liquid–solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230 °C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth. PMID:27095012

  1. Low energy x-ray response of Ge detectors with amorphous Ge entrance contacts

    SciTech Connect

    Luke, P.N.; Rossington, C.S.; Wesela, M.F.

    1993-10-01

    The low energy x-ray response of GI detectors with amorphous GI entrance contacts has been evaluated. The spectral background due to near contact incomplete charge collection was found to consist of two components: a low level component which is insensitive to applied voltage and a high level step-like component which is voltage dependent. At high operating voltages, the high level component can be completely suppressed, resulting in background levels which are much lower than those previously observed using GI detectors with Pd surface barrier or B ion implanted contacts, and which also compare favorably to those obtained with Si(Li) x-ray detectors. The response of these detectors to {sup 55}Fe and 1.77 keV x-rays is shown. A qualitative explanation of the origins of the observed background components is presented.

  2. Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples. [for Radioisotope Thermoelectric Generators

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1975-01-01

    For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

  3. Radiotherapy dosimetry and the thermoluminescence characteristics of Ge-doped fibres of differing germanium dopant concentration and outer diameter

    NASA Astrophysics Data System (ADS)

    Noor, N. Mohd; Fadzil, M. S. Ahmad; Ung, N. M.; Maah, M. J.; Mahdiraji, G. A.; Abdul-Rashid, H. A.; Bradley, D. A.

    2016-09-01

    We examine the influence of elevated dopant concentration on the thermoluminescence characteristics of novel Ge-doped silica fibres. Basic dosimetric characteristics of the TL media were obtained, including linearity, reproducibility, energy dependence, fading, minimum detectable dose and glow curve analysis, use being made of a 60Co gamma irradiation facility (mean energy 1.25 MeV) and an electron linear accelerator producing photons at an accelerating potential of 6 and 10 MV. The 6 mol% Ge-doped fibres were found to provide TL response superior to that of 8- and 10 mol% Ge-doped fibres, both for fibres with outer diameter of 241 μm and 604 μm. Concerning reproducibility, obtained under three different test conditions, at <10% the 6 mol% Ge dopant concentration was observed to provide the superior coefficient of variation (CV). In regard to energy dependence, the 10 mol% Ge doped cylindrical fibres produced the largest gradient values at 0.364 and 0.327 for the 241 μm and 604 μm diameter cylindrical fibres respectively and thus the greatest energy dependency. Measured 33 days post irradiation; the 6 mol% Ge doped cylindrical fibres showed the least TL signal loss, at 21% for the 241 μm cylindrical fibre and <40% for the 604 μm cylindrical fibres. The results also revealed that the 6 mol% optical fibres provided the lowest minimum detectable dose, at 0.027 Gy for 6 MV photon beams. Evaluations of these characteristics are supporting development of novel Ge-doped optical fibres for dosimetry in radiotherapy.

  4. Monte Carlo simulation of gamma-ray interactions in an over-square high-purity germanium detector for in-vivo measurements

    NASA Astrophysics Data System (ADS)

    Saizu, Mirela Angela

    2016-09-01

    The developments of high-purity germanium detectors match very well the requirements of the in-vivo human body measurements regarding the gamma energy ranges of the radionuclides intended to be measured, the shape of the extended radioactive sources, and the measurement geometries. The Whole Body Counter (WBC) from IFIN-HH is based on an “over-square” high-purity germanium detector (HPGe) to perform accurate measurements of the incorporated radionuclides emitting X and gamma rays in the energy range of 10 keV-1500 keV, under conditions of good shielding, suitable collimation, and calibration. As an alternative to the experimental efficiency calibration method consisting of using reference calibration sources with gamma energy lines that cover all the considered energy range, it is proposed to use the Monte Carlo method for the efficiency calibration of the WBC using the radiation transport code MCNP5. The HPGe detector was modelled and the gamma energy lines of 241Am, 57Co, 133Ba, 137Cs, 60Co, and 152Eu were simulated in order to obtain the virtual efficiency calibration curve of the WBC. The Monte Carlo method was validated by comparing the simulated results with the experimental measurements using point-like sources. For their optimum matching, the impact of the variation of the front dead layer thickness and of the detector photon absorbing layers materials on the HPGe detector efficiency was studied, and the detector’s model was refined. In order to perform the WBC efficiency calibration for realistic people monitoring, more numerical calculations were generated simulating extended sources of specific shape according to the standard man characteristics.

  5. Surface Passivation of Germanium Nanowires

    SciTech Connect

    Adhikari, Hemant; Sun, Shiyu; Pianetta, Piero; Chidsey, Chirstopher E.D.; McIntyre, Paul C.; /SLAC, SSRL

    2005-05-13

    The surface of single crystal, cold-wall CVD-grown germanium nanowires was studied by synchrotron radiation photoemission spectroscopy (SR-PES) and also by conventional XPS. The as-grown germanium nanowires seem to be hydrogen terminated. Exposure to laboratory atmosphere leads to germanium oxide growth with oxidation states of Ge{sup 1+}, Ge{sup 2+}, Ge{sup 3+}, while exposure to UV light leads to a predominance of the Ge{sup 4+} oxidation state. Most of the surface oxide could be removed readily by aqueous HF treatment which putatively leaves the nanowire surface hydrogen terminated with limited stability in air. Alternatively, chlorine termination could be achieved by aq. HCl treatment of the native oxide-coated nanowires. Chlorine termination was found to be relatively more stable than the HF-last hydrogen termination.

  6. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    SciTech Connect

    Kang, Dong-Ho; Park, Jin-Hong

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  7. On the structural landscape in endohedral silicon and germanium clusters, M@Si12 and M@Ge12.

    PubMed

    Goicoechea, José M; McGrady, John E

    2015-04-21

    Amongst the endohedral clusters of the tetrel elements, M@En, the 12-vertex species are unique in that three completely different geometries, the icosahedron (Ih, [Ni@Pb12](2-)), the hexagonal prism (HP, Cr@Si12) and the bicapped pentagonal prism (BPP, [Ru@Ge12](3-)) have been identified in stable molecules. We explore here the origins of this structural diversity by comparing stability patterns across isovalent and isoelectronic series, M@Si12, M@Ge12 and [M@Ge12](3-). The BPP structure dominates the structural landscape for high valence electron counts (57-60) while the HP has a rather narrower window of stability around the 54-56 count. Moreover the preference for an HP structure is unique to silicon: in no case is a rigorously D6h-symmetric structure the global minimum for M@Ge12. Distortions from the high-symmetry limits, where present, can be traced to degeneracies or near-degeneracies in the frontier orbital domains. In all cases the structure adopted is that which maximizes the delocalization of electron density between the metal and the cluster cage, such that both components attain stable electronic configurations. PMID:25636138

  8. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Ksendzov, A.; Dejewski, Suzan M.; Jones, Eric W.; Fathauer, Robert W.; Krabach, Timothy N.; Maserjian, Joseph

    1991-01-01

    A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

  9. Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

    SciTech Connect

    Smagina, J. V. Zinovyev, V. A.; Nenashev, A. V.; Dvurechenskii, A. V.; Armbrister, V. A.; Teys, S. A.

    2008-03-15

    The effect of pulsed irradiation by a low-energy (50-250 eV) ion beam with a pulse duration of 0.5 s on the nucleation and growth of three-dimensional germanium islands during molecular-beam heteroepitaxy of Ge/Si(100) structures is investigated experimentally. It is revealed that, at specific values of the integrated ion flux (less than 10{sup 12} cm{sup -2}), pulsed ion irradiation leads to an increase in the density of islands and a decrease in their mean size and size dispersion as compared to those obtained in the case of heteroepitaxy without ion irradiation. The observed phenomena are explained in the framework of the proposed model based on the concept of a change in the diffusion mobility of adatoms due to the instantaneous generation of interstitial atoms and vacancies under pulsed ion irradiation. It is assumed that the vacancies and interstitial atoms give rise to an additional surface strain responsible for the change in the binding energy of the adatoms. Under certain conditions, these processes bring about the formation of centers of preferential nucleation of three-dimensional islands at the places where the ions impinge on the surface. The model accounts for the possibility of annihilating vacancies and interstitial atoms on the surface of the growing layer. It is demonstrated that the results obtained from the Monte Carlo calculations based on the proposed model are in good agreement with the experimental data.

  10. Pair production by 5-150 GeV photons in the strong crystalline fields of germanium, tungsten and iridium

    NASA Astrophysics Data System (ADS)

    Kirsebom, K.; Kononets, Yu. V.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Biino, C.; Elsener, K.; Ballestrero, S.; Sona, P.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K.

    1998-02-01

    Experimental results for pair production by 20-150 GeV photons in a Ge crystal cooled to 100 K are presented. The results include total and differential enhancements for incidence of the photons along the (1 1 0) plane with angles 0-4.5 mrad to the <1 1 0> axis. For the first time, a comparison can be made with theoretical results which for incidence along the plane predict pronounced structural changes of a resonance type in the pair production yield as a function of angle to the axis. These changes originate from the coherent interaction with the strong field of the atomic strings in the crystal. Furthermore, results for pair production by 5-55 GeV photons in W and Ir crystals at temperatures between 100 and 300 K are presented. These results are for total enhancements with photons incident along the strongest axes in these materials, i.e. the <1 1 1> axis in W and the <1 1 0> axis in Ir. A clear disagreement with theoretical curves calls for improved calculations.

  11. Interactive Analysis of Gamm-ray Spectra from GE Semiconductor Detectors

    1997-09-25

    GAUSS IX is a tool to interactively analyze gamma-ray spectra from Ge Semicondutor detectors. The user has full control over the view of the spectrum being analyzed and the location of the peaks and peak regions. Analysis is performed at user request to the requested peak regions. The fit of a peak region can be previewed before archival or deletion. An iterative procedure is available for calibrating the energy and width equations.

  12. Monte Carlo analysis of the influence of germanium dead layer thickness on the HPGe gamma detector experimental efficiency measured by use of extended sources.

    PubMed

    Chham, E; García, F Piñero; El Bardouni, T; Ferro-García, M Angeles; Azahra, M; Benaalilou, K; Krikiz, M; Elyaakoubi, H; El Bakkali, J; Kaddour, M

    2014-09-22

    We have carried out a study to figure out the influence of crystal inactive-layer thickness on gamma spectra measured by an HPGe detector. The thickness of this dead layer (DL) is not known (no information about it was delivered by the manufacturer) due to the existence of a transition zone where photons are increasingly absorbed. To perform this analyses a virtual model of a Canberra HPGe detector was produced with the aid of MCNPX 2.7 code. The main objective of this work is to produce an optimal modeling for our GPGe detector. To this end, the study included the analysis of the total inactive germanium layer thickness and the active volume that are needed in order to obtain the smallest discrepancy between calculated and experimental efficiencies. Calculations and measurements were performed for all of the radionuclides included in a standard calibration gamma cocktail solution. Different geometry sources were used: a Marinelli and two other new sources represented as S(1) and S(2). The former was used for the determination of the active volume, whereas the two latter were used for the determination of the face and lateral DL, respectively. The model was validated by comparing calculated and experimental full energy peak efficiencies in the 50-1900keV energy range. the results show that the insertion of the DL parameter in the modeling is absolutely essential to reproduce the experimental results, and that the thickness of this DL varies from one position to the other on the detector surface.

  13. Development of silicon-germanium visible-near infrared arrays

    NASA Astrophysics Data System (ADS)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  14. Gamma-ray pulse height spectrum analysis on systems with multiple Ge detectors using spectrum summing

    SciTech Connect

    Killian, E.W.

    1997-11-01

    A technique has been developed at the Idaho National Engineering Laboratory to sum high resolution gamma-ray pulse spectra from systems with multiple Ge detectors. Lockheed Martin Idaho Technologies Company operates a multi-detector spectrometer configuration at the Stored Waste Examination Pilot Plant facility which is used to characterize the radionuclide contents in waste drums destined for shipment to Waste Isolation Pilot Plant. This summing technique was developed to increase the sensitivity of the system, reduce the count times required to properly quantify the radio-nuclides and provide a more consistent methodology for combining data collected from multiple detectors. In spectrometer systems with multiple detectors looking at non homogeneous waste forms it is often difficult to combine individual spectrum analysis results from each detector to obtain a meaningful result for the total waste container. This is particularly true when the counting statistics in each individual spectrum are poor. The spectrum summing technique adds the spectra collected by each detector into a single spectrum which has better counting statistics than each individual spectrum. A normal spectral analysis program can then be used to analyze the sum spectrum to obtain radio-nuclide values which have smaller errors and do not have to be further manipulated to obtain results for the total waste container. 2 refs., 2 figs.

  15. Elucidation of complex decay schemes using on-line mass separated sources and a large array of Compton-suppressed germanium detectors

    NASA Astrophysics Data System (ADS)

    Brown, N.; Wood, J. L.; Kulp, W. D.; Furse, D.; Demand, G. A.; Garrett, P. E.; Green, K. L.; Grinyer, G. F.; Leach, K. G.; Phillips, A. A.; Schumaker, M. A.; Svensson, C. E.; Wong, J.; Ball, G. C.; Bandyopadhyay, D. S.; Hackman, G.; Morton, A. C.; Pearson, C. J.; Austin, R. A. E.; Colosimo, S.; Yates, S. W.; Cross, D.

    2008-10-01

    Complex decay scheme construction using beta decay of isotopes produced by spallation and mass separation on-line at TRIUMF-ISAC and studied with the 8π array of 20 Compton-suppressed germanium detectors is described. Results from the analysis of the ^160Yb -> ^160Tm decay will be presented. Emphasis will be placed on the sensitivity to weak decay branches, assignment of γ-ray lines to isobars, and the use of conversion electron coincidences to observe low-energy transitions. The goal of this work is to achieve detailed decay scheme spectroscopy far from stability with the same level of detail as obtained with the 8π array near stabilty in earlier N=90 studies [1] [2]. [1] W.D. Kulp et al., Phys. Rev. C 69, 064309 (2004). [2] W.D. Kulp et al., Phys. Rev. C 76, 034319 (2007).

  16. Germanium geochemistry and mineralogy

    USGS Publications Warehouse

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  17. The Oral Intake of Organic Germanium, Ge-132, Elevates α-Tocopherol Levels in the Plas-ma and Modulates Hepatic Gene Expression Profiles to Promote Immune Activation in Mice.

    PubMed

    Nakamura, Takashi; Takeda, Tomoya; Tokuji, Yoshihiko

    2014-01-01

    The common water-soluble organic germanium compound poly-trans-[(2-carboxyethyl) germasesquioxane] (Ge-132) exhibits activities related to immune responses and antioxidant induction. In this study, we evaluated the antioxidative effect of dietary Ge-132 in the plasma of mice. Male ICR mice (seven mice per group) received an AIN-76 diet with 0.05% Ge-132; three groups received the Ge-132-containing diet for 0, 1 or 4 days. The plasma alpha-tocopherol (α-tocopherol) concentration increased from 6.85 to 9.60 μg/ml after 4 days of Ge-132 intake (p<0.05). We evaluated the changes in hepatic gene expression related to antioxidative activity as well as in the entire expression profile after one day of Ge-132 intake, using DNA microarray technology. We identified 1,220 genes with altered expression levels greater than 1.5-fold (increased or decreased) as a result of Ge-132 intake, and α-tocopherol transfer protein (Ttpa) gene expression was increased 1.62-fold. Immune activation was identified as the category with the most changes (containing 60 Gene Ontology (GO) term biological processes (BPs), 41 genes) via functional clustering analysis of altered gene expression. Ge-132 affected genes in clusters related to ATP production (22 GO term BPs, 21 genes), lipid metabolism (4 GO term BPs, 38 genes) and apoptosis (5 GO term BPs). Many GO term BPs containing these categories were significantly affected by the Ge-132 intake. Oral Ge-132 intake may therefore have increased plasma α-tocopherol levels by up-regulating α-tocopherol transfer protein (Ttpa) gene expression.

  18. Laser synthesis of germanium tin alloys on virtual germanium

    NASA Astrophysics Data System (ADS)

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  19. A review on germanium nanowires.

    PubMed

    Pei, Li Z; Cai, Zheng Y

    2012-01-01

    Ge nanowires exhibit wide application potential in the fields of nanoscale devices due to their excellently optical and electrical properties. This article reviews the recent progress and patents of Ge nanowires. The recent progress and patents for the synthesis of Ge nanowires using chemical vapor deposition, laser ablation, thermal evaporation, template method and supercritical fluid-liquid-solid method are demonstrated. Amorphous germanium oxide layer and defects existing in Ge nanowires result in poor Ohmic contact between Ge nanowires and electrodes. Therefore, Ge nanowires should be passivated in order to deposit connecting electrodes before applied in nanoelectronic devices. The experimental progress and patents on the application of Ge nanowires as field effect transistors, lithium batteries, photoresistors, memory cell and fluid sensors are discussed. Finally, the future development of Ge nanowires for the synthesis and practical application is also discussed.

  20. Solution synthesis of germanium nanocrystals

    DOEpatents

    Gerung, Henry; Boyle, Timothy J.; Bunge, Scott D.

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  1. Mesostructured Metal Germanium Sulfide and Selenide Materials Based on the Tetrahedral [Ge 4S 10] 4- and [Ge 4Se 10] 4- Units: Surfactant Templated Three-Dimensional Disordered Frameworks Perforated with Worm Holes

    NASA Astrophysics Data System (ADS)

    Wachhold, Michael; Kasthuri Rangan, K.; Lei, Ming; Thorpe, M. F.; Billinge, Simon J. L.; Petkov, Valeri; Heising, Joy; Kanatzidis, Mercouri G.

    2000-06-01

    The polymerization of [Ge4S10]4- and [Ge4Se10]4- unit clusters with the divalent metal ions Zn2+, Cd2+, Hg2+, Ni2+, and Co2+ in the presence of various surfactant cations leads to novel mesostructured phases. The surfactants are the quaternary ammonium salts C12H25NMe3Br, C14H29NMe3Br, C16H33NMe3Br, and C18H37NMe3Br, which play the role of templates, helping to assemble a three-dimensional mesostructured metal-germanium chalcogenide framework. These materials are stoichiometric in nature and have the formula of (R-NMe3)2[MGe4Q10] (Q=S, Se). The local atomic structure was probed by X-ray diffuse scattering and pair distribution function analysis methods and indicates that the adamantane clusters stay intact while the linking metal atoms possess a tetrahedral coordination environment. A model can be derived, from the comparison of measured and simulated X-ray powder diffraction patterns, describing the structure as an amorphous three-dimensional framework consisting of adamantane [Ge4Q10]4- units that are bridged by tetrahedral coordinated M2+ cations. The network structures used in the simulations were derived from corresponding disordered structures developed for amorphous silicon. The frameworks in (R-NMe3)2[MGe4Q10] are perforated with worm hole-like tunnels, occupied by the surfactant cations, which show no long-range order. This motif is supported by transmission electron microscopy images of these materials. The pore sizes of these channels were estimated to lie in the range of 20-30 Å, depending on the appointed surfactant cation length. The framework wall thickness of ca. 10 Å is thereby independent from the surfactant molecules used. Up to 80% of the surfactant molecules can be removed by thermal degradation under vacuum without loss of mesostructural integrity. Physical, chemical, and spectroscopic properties of these materials are discussed.

  2. Monte-Carlo calculations of Ge detector escape-peak efficiencies

    NASA Technical Reports Server (NTRS)

    Owens, Alan; Gehrels, Neil; Pascarelle, Sebastian M.; Teegarden, Bonnard J.

    1991-01-01

    The authors present calculated first and second escape peak efficiencies for a variety of n-type coaxial Ge detectors using the Monte Carlo method. The results are given for right-circular cylindrical geometries of size ranging from 3-cm diameter x 3-cm thick to 8-cm diameter x 8-cm thick. For completeness, the intrinsic interaction and photopeak efficiencies for energies ranging from 20 keV to 20 MeV are listed. The calculations have been tested against experimental measurement and found to be in agreement to within the quoted errors (typically 10 percent). It is found that the ratio of the second escape peak efficiency to the first escape peak efficiency, R, is approximately independent of energy for small detector volumes but has a weak power law energy dependence for large volumes. It is shown that R also varies as an inverse power law of the active volume.

  3. The SNAP 27 gamma radiation spectrum obtained with a Ge/Li/ detector

    NASA Technical Reports Server (NTRS)

    Taherzadeh, M.

    1976-01-01

    The pulse height distribution, obtained experimentally using a Ge(Li) detector, was employed to determine the photon emission rate characteristic of a PuO2 fuel source known as the SNAP 27 heat source. The selfshielding parameters of the photon emitter, the efficiency of the detector and the geometry of the experiment were utilized to determine the unscattered photon emission rate of the source and the unscattered flux spectrum at a certain specified distance from the source. For the scattered part of the flux spectrum a Monte Carlo technique was employed so that the total flux spectrum could be determined at any point in the radiation field. As a result of this work, a technique was developed to obtain the unfolded radiation spectrum of the SNAP 27 heat source.

  4. Prototype Ge:Ga detectors for the NASA-Ames cooled grating spectrometer

    NASA Astrophysics Data System (ADS)

    Houck, J. R.

    1981-07-01

    The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistivity of approx. 12ohms cm. The wafer is approximately 2 inches in diameter and 0.061 inches thick. The contact material was ion implanted with Boron using 10 to the 14th power ions/sq cm at 25 Kev and 2 x10 to the 14th power ions/sq cm at 50 Kev. The crystal was then sputter-cleaned and metallized first with sputtered Ti and then sputter Au. In addition to the usual infrared measurements of responsivity and noise, measurements were made of the detectors' response to ionizing radiation.

  5. Code System for Analyzing Ge and Alpha-Particle Detector Spectra.

    1992-06-29

    Version 00 GRPANL (GRouP ANaLysis) is a suite of programs which analyzes and interprets regions of germanium and alpha-particle detector pulse-height spectra. GRPANL is the main peak-fitting program; the other programs included are used in conjunction with GRPANL. GRPANL is particularly useful for accurately deconvoluting and interpreting complex clusters of peaks in a spectrum. GRPANL fits peaks in specified regions of a gamma-ray, x-ray, or alpha-particle spectrum, calculates their energies and intensities, and optionally calculatesmore » the photon emission rates for the sample from which they were emitted. It can also identify and measure isotopes in a sample. GRPANL output can be immediately analyzed for quantitative isotopic assays or stored in an intermediate data file. The other programs are EDIGRP, LIBRY, and GEVAL. EDISRP (EDIt GRouP) creates and edits an analysis control file that contains input parameters and analysis options for spectral regions analyzed by GRPANL; users can repeat or modify an analysis without retyping input. LIBRY (LIBRarY) assembles and cross references selected nuclear decay scheme data and stores it in decay scheme data files for use by GRPANL and GEVAL. GEVAL (Gamma ray EVALuation) uses these data files along with GRPANL intermediate results to identify isotopes, calculate their abundance in a sample, and print the corresponding disintegration rates and abundances at counting and zero times.« less

  6. A multi-channel monolithic Ge detector system for fluorescence x-ray absorption spectroscopy

    SciTech Connect

    Bucher, J.J.; Allen, P.G.; Edelstein, N.M.; Shuh, D.K.; Madden, N.W.; Cork, C.; Luke, P.; Pehl, D.; Malone, D.

    1995-03-01

    Construction and performance of a monolithic quad-pixel Ge detector for fluorescence x-ray absorption spectroscopy (XAS) at synchrotron radiation sources are described. The detector semiconductor element has an active surface area of 4.0 cm{sup 2} which is electrically separated into four 1.0 cm{sup 2} pixels, with little interfacial dead volume. Spatial response of the array shows that cross-talk between adjacent pixels is < 10% for 5.9 keV photons that fall within 0.5 mm of the pixel boundaries. The detector electronics system uses pre-amplifiers built at LBNL with commercial Tennelec Model TC 244 amplifiers. Using an {sup 55}Fe test source (MnK{sub {alpha}}, 5.9 keV), energy resolution of better than 200 eV is achieved with a 4 {mu}sec peaking time. At 0.5 {mu}sec peaking time, pulse pileup results in a 75% throughput efficiency for an incoming count rate of 100 kHz. Initial XAS fluoresncece measurements at the beamline 4 wiggler end stations at SSRL show that the detector system has several advantages over commercial x-ray spectrometers for low-concentration counting.

  7. Simulations for Light Collection Efficiency (Jlab Hall C 12 GeV Kaon Aerogel Detector)

    NASA Astrophysics Data System (ADS)

    Rothgeb, Laura

    2011-10-01

    Studying the additional flavor degree of freedom in charged kaon production allows for an unexampled insight into the transition from hadronic to partonic degrees of freedom in exclusive processes and specifically the reaction mechanism underlying strangeness production. This unique opportunity has gone greatly unexplored, however, because of the challenges posed by the experimental factors. One of these challenges is determining a method of separation for kaons from pion and proton backgrounds at high momenta. The simplest and most cost-effective solution is the implementation of a kaon aerogel Cherenkov detector. At the Catholic University of America, we are building such a detector for use in the 12GeV Hall C Super High Momentum Spectrometer at Jefferson Lab. The detector will use photo multiplier tubes to collect the Cherenkov radiation given off by the aerogel and convert that signal into analyzable data that will be used to determine the form factor of the kaon, which will yield a greater understanding of the internal structure of the proton. In this presentation I will present the results from the simulations carried out to optimize the aerogel coverage and study the effect of light guides on the efficiency of the detector. Supported in part by NSF grants PHY 1019521 and 1039446.

  8. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  9. A direct comparison of Ge and Si(Li) detectors in the 2--20 keV range

    SciTech Connect

    Rossington, C.S.; Giauque, R.D.; Jaklevic, J.M.

    1991-10-01

    The spectral response of high purity Ge (HPGe) and lithium-drifted Si (Si(Li)) surface barrier detectors of similar geometry has been measured over a range of x-ray energies under identical experimental conditions. Detector characteristics such as spectral background, escape peak intensity, entrance window absorption, and energy resolution are presented and compared. Although these characteristic have been discussed in the literature previously, this paper represents an attempt to consolidate the information by making comparisons under equivalent experimental conditions for the two types of detectors. A primary goal of the study is a comparison of the two types of detectors for use in x-ray fluorescence applications.

  10. Electrodeposited germanium nanowires.

    PubMed

    Mahenderkar, Naveen K; Liu, Ying-Chau; Koza, Jakub A; Switzer, Jay A

    2014-09-23

    Germanium (Ge) is a group IV semiconductor with superior electronic properties compared with silicon, such as larger carrier mobilities and smaller effective masses. It is also a candidate anode material for lithium-ion batteries. Here, a simple, one-step method is introduced to electrodeposit dense arrays of Ge nanowires onto indium tin oxide (ITO) substrates from aqueous solution. The electrochemical reduction of ITO produces In nanoparticles that act as a reduction site for aqueous Ge(IV) species, and as a solvent for the crystallization of Ge nanowires. Nanowires deposited at 95 °C have an average diameter of 100 nm, whereas those deposited at room temperature have an average diameter of 35 nm. Both optical absorption and Raman spectroscopy suggest that the electrodeposited Ge is degenerate. The material has an indirect bandgap of 0.90-0.92 eV, compared with a value of 0.67 eV for bulk, intrinsic Ge. The blue shift is attributed to the Moss-Burstein effect, because the material is a p-type degenerate semiconductor. On the basis of the magnitude of the blue shift, the hole concentration is estimated to be 8 × 10(19) cm(-3). This corresponds to an In impurity concentration of about 0.2 atom %. The resistivity of the wires is estimated to be 4 × 10(-5) Ω·cm. The high conductivity of the wires should make them ideal for lithium-ion battery applications. PMID:25157832

  11. Background rejection capabilities of a Compton imaging telescope setup with a DSSD Ge planar detector and AGATA

    NASA Astrophysics Data System (ADS)

    Doncel, M.; Quintana, B.; Gadea, A.; Recchia, F.; Farnea, E.

    2011-08-01

    In this work, we show the first Monte Carlo results about the performance of the Ge array which we propose for the DESPEC experiment at FAIR, when the background algorithm developed for AGATA is applied. The main objective of our study is to characterize the capabilities of the γ-spectroscopy system, made up of AGATA detectors in a semi-spherical distribution covering a 1π solid angle and a set of planar Ge detectors in a daisy configuration, to discriminate between γ sources placed at different locations.

  12. Silicon germanium (SiGe) radioisotope thermoelectric generator (RTG) program for space missions. Nineteenth technical progress report, December 1980-January 1981

    SciTech Connect

    Whitmore, C. W.; Silverman, G.

    1981-01-01

    Work accomplished during the reporting period on the DOE Silicon Germanium RTG Program, Contract DE-AC01-79ET-32043 is described. This program consists of the following three tasks: multi-hundred watt RTG for the Galileo probe mission; reestablishment of silicon germanium unicouple capability; and general purpose heat source RTG for the international solar polar and Galileo orbiter missions. Details of program progress for each task, including a milestone schedule and a discussion of current problem areas (if any) are presented.

  13. Background Reduction For Germanium Double Beta Decay Experiments

    SciTech Connect

    Gomez, H.; Cebrian, S.; Morales, J.; Villar, J. A.

    2007-03-28

    The new generation experiments to search for the neutrinoless double beta decay of 76Ge (Q{beta}{beta}=2039keV) using enriched germanium detectors, need to reach a background level of {approx}10-3 c keV-1 kg-1 y-1 in the Region of Interest (RoI: 2-2.1 MeV) that would have, for 70 kg of germanium enriched to 86% in 76Ge, 3 keV of FWHM and 5 years of measuring time, a sensitivity on the effective neutrino mass of {<=} 40 meV. To reduce the background level close to the value needed, we have to combine several techniques. Three of the most important points to study are: segmentation and granularity of the crystal and spatial resolution of the detector directly correlated with an offline Pulse Shape Analysis (PSA). Preliminary studies about these strategies for background reduction were developed during last months, obtaining some promising results.

  14. Germanium JFET for Cryogenic Readout Electronics

    NASA Technical Reports Server (NTRS)

    Das, N. C.; Monroy, C.; Jhabvala, M.; Shu, P.

    1999-01-01

    The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).

  15. A simple methodology for characterization of germanium coaxial detectors by using Monte Carlo simulation and evolutionary algorithms.

    PubMed

    Guerra, J G; Rubiano, J G; Winter, G; Guerra, A G; Alonso, H; Arnedo, M A; Tejera, A; Gil, J M; Rodríguez, R; Martel, P; Bolivar, J P

    2015-11-01

    The determination in a sample of the activity concentration of a specific radionuclide by gamma spectrometry needs to know the full energy peak efficiency (FEPE) for the energy of interest. The difficulties related to the experimental calibration make it advisable to have alternative methods for FEPE determination, such as the simulation of the transport of photons in the crystal by the Monte Carlo method, which requires an accurate knowledge of the characteristics and geometry of the detector. The characterization process is mainly carried out by Canberra Industries Inc. using proprietary techniques and methodologies developed by that company. It is a costly procedure (due to shipping and to the cost of the process itself) and for some research laboratories an alternative in situ procedure can be very useful. The main goal of this paper is to find an alternative to this costly characterization process, by establishing a method for optimizing the parameters of characterizing the detector, through a computational procedure which could be reproduced at a standard research lab. This method consists in the determination of the detector geometric parameters by using Monte Carlo simulation in parallel with an optimization process, based on evolutionary algorithms, starting from a set of reference FEPEs determined experimentally or computationally. The proposed method has proven to be effective and simple to implement. It provides a set of characterization parameters which it has been successfully validated for different source-detector geometries, and also for a wide range of environmental samples and certified materials.

  16. A simple methodology for characterization of germanium coaxial detectors by using Monte Carlo simulation and evolutionary algorithms.

    PubMed

    Guerra, J G; Rubiano, J G; Winter, G; Guerra, A G; Alonso, H; Arnedo, M A; Tejera, A; Gil, J M; Rodríguez, R; Martel, P; Bolivar, J P

    2015-11-01

    The determination in a sample of the activity concentration of a specific radionuclide by gamma spectrometry needs to know the full energy peak efficiency (FEPE) for the energy of interest. The difficulties related to the experimental calibration make it advisable to have alternative methods for FEPE determination, such as the simulation of the transport of photons in the crystal by the Monte Carlo method, which requires an accurate knowledge of the characteristics and geometry of the detector. The characterization process is mainly carried out by Canberra Industries Inc. using proprietary techniques and methodologies developed by that company. It is a costly procedure (due to shipping and to the cost of the process itself) and for some research laboratories an alternative in situ procedure can be very useful. The main goal of this paper is to find an alternative to this costly characterization process, by establishing a method for optimizing the parameters of characterizing the detector, through a computational procedure which could be reproduced at a standard research lab. This method consists in the determination of the detector geometric parameters by using Monte Carlo simulation in parallel with an optimization process, based on evolutionary algorithms, starting from a set of reference FEPEs determined experimentally or computationally. The proposed method has proven to be effective and simple to implement. It provides a set of characterization parameters which it has been successfully validated for different source-detector geometries, and also for a wide range of environmental samples and certified materials. PMID:26188622

  17. Silicon Germanium (SiGe) Radioisotope Thermoelectric Generator (RTG) Program for space missions. Fifteenth technical progress report, August 1-31, 1980

    SciTech Connect

    Whitmore, C. W.; Silverman, G.

    1980-01-01

    This program consists of the following three tasks: Multi-Hundred Watt RTG for the Galileo Probe Mission; Reestablishment of Silicon Germanium Unicouple Capability; and General Purpose Heat Source RTG for the International Solar Polar and Galileo Orbiter Missions. Details of program progress for each task, including a milestone schedule and a discussion of current problem areas (if any) are presented.

  18. Performance of multiplexed Ge:Ga detector arrays in the far infrared

    NASA Technical Reports Server (NTRS)

    Farhoomand, Jam; Mccreight, Craig

    1990-01-01

    The performance of two multi-element, multiplexed Ge:Ga linear arrays under low-background conditions was investigated. The on-focal switching is accomplished by MOSFET switches, and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns, and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the highest responsivity was 584 A/W, the noise equivalent power was 1.0 x 10(exp -16) W/square root of Hz, and the read noise was 6100 electrons/sample. A detailed description of the test setup and procedure is presented.

  19. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  20. Mathematical calibration of Ge detectors, and the instruments that use them

    SciTech Connect

    Bronson, F.L.; Young, B.

    1997-11-01

    Efficiency calibrations for Ge detectors are typically done with the use of multiple energy calibrations sources which are added to a bulk matrix intended to simulate the measurement sample, and then deposited in the sample container. This is rather easy for common laboratory samples. Bu, even there, for many environmental samples, waste assay samples, and operational health physics samples, accurate calibrations are difficult. For these situations, various mathematical corrections or direct calibration techniques are used at Canberra. EML has pioneered the use of mathematical calibrations following source-based detector characterization measurements for in situ measurements of environmental fallout. Canberra has expanded this by the use of MCNP for the source measurements required in EML. For other calibration situations, MCNP was used directly, as the primary calibration method. This is demonstrated to be at least as accurate as source based measurements, and probably better. Recently, a new method [ISOCS] has been developed and is nearing completion. This promises to be an easy to use calibration software that can be used by the customer for in situ gamma spectroscopy to accurately measure many large sized samples, such as boxes, drums, pipes, or to calibrate small laboratory-type samples. 8 refs., 8 figs., 5 tabs.

  1. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  2. Results from a Search for Light-Mass Dark Matter with a P-type Point Contact Germanium Detector

    SciTech Connect

    Aalseth, Craig E.; Barbeau, Phil; Bowden, N. S.; Cabrera-Palmer, B.; Colaresi, J.; Collar, J. I.; Dazeley, S.; de Lurgio, P.; Fast, James E.; Fields, N.; Greenberg, C.; Hossbach, Todd W.; Keillor, Martin E.; Kephart, Jeremy D.; Marino, Michael G.; Miley, Harry S.; Miller, M. L.; Orrell, John L.; Radford, D. C.; Reyna, D.; Tench, O.; Van Wechel, T. D.; Wilkerson, J.; Yocum, K. M.

    2011-03-01

    We report on several features present in the energy spectrum from an ultra low-noise geranium detector operated at 2,100 m.w.e. By implementing a new technique able to reject surface events, a number of cosmogenic peaks can be observed for the first time. We discuss several possible causes for an irreducible excess of bulk-like events below 3 keVee, including a dark matter candidate common to the DAMA/LIBRA annual modulation effect, the hint of a signal in CDMS, and phenomenological predictions. Improved constraints are placed on a cosmological origin for the DAMA/LIBRA effect.

  3. Characterization of naturally occurring radioactive materials in Libyan oil pipe scale using a germanium detector and Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Habib, A. S.; Shutt, A. L.; Regan, P. H.; Matthews, M. C.; Alsulaiti, H.; Bradley, D. A.

    2014-02-01

    Radioactive scale formation in various oil production facilities is acknowledged to pose a potential significant health and environmental issue. The presence of such an issue in Libyan oil fields was recognized as early as 1998. The naturally occurring radioactive materials (NORM) involved in this matter are radium isotopes (226Ra and 228Ra) and their decay products, precipitating into scales formed on the surfaces of production equipment. A field trip to a number of onshore Libyan oil fields has indicated the existence of elevated levels of specific activity in a number of locations in some of the more mature oil fields. In this study, oil scale samples collected from different parts of Libya have been characterized using gamma spectroscopy through use of a well shielded HPGe spectrometer. To avoid potential alpha-bearing dust inhalation and in accord with safe working practices at this University, the samples, contained in plastic bags and existing in different geometries, are not permitted to be opened. MCNP, a Monte Carlo simulation code, is being used to simulate the spectrometer and the scale samples in order to obtain the system absolute efficiency and then to calculate sample specific activities. The samples are assumed to have uniform densities and homogeneously distributed activity. Present results are compared to two extreme situations that were assumed in a previous study: (i) with the entire activity concentrated at a point on the sample surface proximal to the detector, simulating the sample lowest activity, and; (ii) with the entire activity concentrated at a point on the sample surface distal to the detector, simulating the sample highest activity.

  4. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  5. Germanium multiphase equation of state

    DOE PAGESBeta

    Crockett, Scott D.; Lorenzi-Venneri, Giulia De; Kress, Joel D.; Rudin, Sven P.

    2014-05-07

    A new SESAME multiphase germanium equation of state (EOS) has been developed using the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element

  6. Germanium-Based Nanomaterials for Rechargeable Batteries.

    PubMed

    Wu, Songping; Han, Cuiping; Iocozzia, James; Lu, Mingjia; Ge, Rongyun; Xu, Rui; Lin, Zhiqun

    2016-07-01

    Germanium-based nanomaterials have emerged as important candidates for next-generation energy-storage devices owing to their unique chemical and physical properties. In this Review, we provide a review of the current state-of-the-art in germanium-based materials design, synthesis, processing, and application in battery technology. The most recent advances in the area of Ge-based nanocomposite electrode materials and electrolytes for solid-state batteries are summarized. The limitations of Ge-based materials for energy-storage applications are discussed, and potential research directions are also presented with an emphasis on commercial products and theoretical investigations.

  7. Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

    SciTech Connect

    Gupta, Suyog Chen, Robert; Harris, James S.; Saraswat, Krishna C.

    2013-12-09

    GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12} cm{sup −2} has been achieved.

  8. SuperTIGER scintillator detector calibration with 30 GeV/nucleon Pb and its fragments

    NASA Astrophysics Data System (ADS)

    Sasaki, Makoto

    2016-07-01

    The SuperTIGER (Super Trans-Iron Galactic Element Recorder) long-duration balloon instrument has measured the abundances of galactic cosmic-ray elements to provide sensitive tests and clarification of the OB-association model of Galactic cosmic-ray origins. More than 600 nuclei with atomic number Z > 30 were observed on its first flight and the abundances of nuclei have been determined with clear individual element resolution and high statistical precision for 30 <= Z <= 40. From November 25 to December 01, 2015, a beamtest was carried out at CERN with fixed energy 30 GeV/nucleon Pb and its fragments to measure the saturation response of the scintillator detectors, which are essential to determine the abundances of nuclei with atomic number Z > 40. The beamtest results have been used to optimize the Geant4 simulation to represent the flight data, and will be used to interpret the flight data to extend the abundance determination to about _{60}Nd. SuperTIGER was developed by Washington University in St. Louis, NASA Goddard Flight Center, the California Institute of Technology, Jet Propulsion Laboratory, and the University of Minnesota.

  9. Transition radiation detectors for electron identification beyond 1 GeV/ c

    NASA Astrophysics Data System (ADS)

    Appuhn, R. D.; Heinloth, K.; Lange, E.; Oedingen, R.; Schlösser, A.

    1988-01-01

    Transition radiation detectors (TRDs) have been tested for the separation of electrons from pions in the momentum range between 1 and 6 GeV/ c. Foams as well as fibres and foils served as radiator materials while two types of chambers, a longitudinal drift chamber (DC) and a multiwire proportional chamber (MWPC), both of 16 mm depth and dominantly filled with xenon, were used for detecting the transition radiation photons with a setup of four chambers. Analyzing the data we compared the methods of mean, truncated mean and of maximum likelihood of the total charge measurements and several methods of cluster analysis. As a result of the total charge measurements performed at test beams at CERN and DESY we obtained about 1% pion contamination at 90% electron efficiency for the polypropylene materials in the configuration of four modules with a total length of 40 cm. An improvement by a factor of about two for the electron/pion discrimination can be obtained in the case of a detailed analysis of the clusters.

  10. Final results of the EDELWEISS-I dark matter search with cryogenic heat-and-ionization Ge detectors

    SciTech Connect

    Sanglard, V.; Chabert, L.; Jesus, M. de; Di Stefano, P.; Drain, D.; Gascon, J.; Gerlic, E.; Goyot, M.; Luca, M.; Stern, M.; Vagneron, L.; Benoit, A.; Berge, L.; Broniatowski, A.; Censier, B.; Collin, S.; Dolgorouky, Y.; Dumoulin, L.; Juillard, A.; Kikuchi, C.

    2005-06-15

    The final results of the EDELWEISS-I dark matter search using cryogenic heat-and-ionization Ge detectors are presented. The final data sample corresponds to an increase by a factor 5 in exposure relative to the previously published results. A recoil energy threshold of 13 keV or better was achieved with three 320 g detectors working simultaneously over four months of stable operation. Limits on the spin-independent cross section for the scattering of a weakly interacting massive particle on a nucleon are derived from an accumulated fiducial exposure of 62 kg d.

  11. Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

    PubMed

    Balram, Krishna C; Audet, Ross M; Miller, David A B

    2013-04-22

    We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

  12. Resolving the germanium atomic weight disparity using multicollector ICPMS.

    PubMed

    Yang, Lu; Meija, Juris

    2010-05-15

    Two most recent mass spectrometric measurements of natural isotopic composition germanium gave discordant Ge atomic weight values of 72.6276(64)(k=2) and 72.6390(69)(k=2), respectively, a decade ago. Each measurement was performed with a different mass spectrometry platform, gas source isotope ratio mass spectrometry and thermal ionization mass spectrometry, respectively. Herein we report results obtained by multicollector inductively coupled plasma mass spectrometry yielding an atomic weight of germanium 72.6296(19)(k=2) which is in support of the upcoming 2009 Standard Atomic Weight adjustment by IUPAC. Germanium isotope ratios were calibrated using a regression mass bias correction model and NIST SRM 994 gallium isotopic reference material. In this model, no assumptions are made regarding the mass bias differences between gallium and germanium or between the isotopes of germanium. Isotope ratios of 0.5620(21), 0.7515(16), 0.2125(7), and 0.2121(12) were obtained for n((70)Ge)/n((74)Ge), n((72)Ge)/n((74)Ge), n((73)Ge)/n((74)Ge), and n((76)Ge)/n((74)Ge), respectively, with expanded uncertainties (k = 2) estimated in accordance with the ISO/BIPM Guide to the Expression of Uncertainty in Measurements.

  13. Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

    NASA Astrophysics Data System (ADS)

    Nam, Ju Hyung; Alkis, Sabri; Nam, Donguk; Afshinmanesh, Farzaneh; Shim, Jaewoo; Park, Jin-Hong; Brongersma, Mark; Okyay, Ali Kemal; Kamins, Theodore I.; Saraswat, Krishna

    2015-04-01

    A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

  14. Near-infrared emission from mesoporous crystalline germanium

    NASA Astrophysics Data System (ADS)

    Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

    2014-10-01

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  15. Near-infrared emission from mesoporous crystalline germanium

    SciTech Connect

    Boucherif, Abderraouf; Aimez, Vincent; Arès, Richard; Korinek, Andreas

    2014-10-15

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  16. Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector.

    PubMed

    Zeng, Long-Hui; Wang, Ming-Zheng; Hu, Han; Nie, Biao; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Hu, Ji-Gang; Xie, Chao; Liang, Feng-Xia; Luo, Lin-Bao

    2013-10-01

    We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that the as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and is sensitive to IR light with high Ilight/Idark ratio of 2 × 10(4) at zero bias voltage. The responsivity and detectivity are as high as 51.8 mA W(-1) and 1.38 × 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals that the photovoltaic IR detector displays excellent spectral selectivity with peak sensitivity at 1400 nm, and a fast light response speed of microsecond rise/fall time with good reproducibility and long-term stability. The generality of the above results suggests that the present MLG/Ge IR photodetector would have great potential for future optoelectronic device applications.

  17. Enhancement of electromagnetic showers initiated by ultrarelativistic electrons in aligned thick germanium crystals

    NASA Astrophysics Data System (ADS)

    Baurichter, A.; Mikkelsen, U.; Kirsebom, K.; Medenwaldt, R.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Biino, C.; Moore, R.; Vilakazi, Z. Z.

    1996-10-01

    The distribution of the energy deposited in thin silicon detectors placed on the downstream side of a thick germanium single crystal bombarded with a 70, 150 and 250 GeV electron beam along directions close to the <110> axis or {110} and {100} planes has been measured. The enhancement of the shower with respect to random incidence, as reflected in the higher value of the centroid of the distribution, is studied as a function of the incidence angle to the axis or plane.

  18. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    NASA Astrophysics Data System (ADS)

    Baurichter, A.; Kirsebom, K.; Medewaldt, R.; Mikkelsen, U.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the <110> axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold.

  19. The Constellation-X Focal Plane Microcalorimeter Array: An NTD-Germanium Solution

    NASA Technical Reports Server (NTRS)

    Beeman, J.; Silver, E.; Bandler, S.; Schnopper, H.; Murray, S.; Madden, N.; Landis, D.; Haller, E. E.; Barbera, M.

    2001-01-01

    The hallmarks of Neutron Transmutation Doped (NTD) germanium cryogenic thermistors include high reliability, reproducibility, and long term stability of bulk carrier transport properties. Using micro-machined NTD Ge thermistors with integral 'flying' leads, we can now fabricate two-dimensional arrays that are built up from a series of stacked linear arrays. We believe that this modular approach of building, assembling, and perhaps replacing individual modules of detectors is essential to the successful fabrication and testing of large multi-element instruments. Details of construction are presented.

  20. Results from a Low-Energy Analysis of the CDMS II Germanium Data

    SciTech Connect

    Ahmed, Z.; Akerib, D.S.; Arrenberg, S.; Bailey, C.N.; Balakishiyeva, D.; Baudis, L.; Bauer, D.A.; Brink, P.L.; Bruch, T.; Bunker, R.; Cabrera, B.; /Stanford U., Phys. Dept. /UC, Santa Barbara

    2010-11-01

    We report results from a reanalysis of data from the Cryogenic Dark Matter Search (CDMS II) experiment at the Soudan Underground Laboratory. Data taken between October 2006 and September 2008 using eight germanium detectors are reanalyzed with a lowered, 2 keV recoil-energy threshold, to give increased sensitivity to interactions from Weakly Interacting Massive Particles (WIMPs) with masses below {approx}10 GeV/c{sup 2}. This analysis provides stronger constraints than previous CDMS II results for WIMP masses below 9 GeV/c{sup 2} and excludes parameter space associated with possible low-mass WIMP signals from the DAMA/LIBRA and CoGeNT experiments.

  1. Assembly of Multi-Element, Ultra Low Background, Germanium Spectrometer for Two Neutrino Double Beta Decay to the Excited State and Materials Assay

    NASA Astrophysics Data System (ADS)

    Kephart, Jeremy

    2003-10-01

    Envisioned array of 16 70 percent, plus two, Germanium detectors with one being a 85 percent ^76Ge enriched detector. Efforts over the past ten to fifteen years in radio purity, shielding, and pulse shape discrimination come to bear. Technology and experience from previous experiments like the International Germanium Experiment (IGEX). This array will explore excited state double beta decay, in addition to segmented detector operation. As well as materials screening for future zero neutrino double beta decay effective mass. This is a summary of progress in construction. Acknowledgments: SEGA constructed by Triangle Universities Nuclear Laboratory, support by DOE. Pacific Northwest National Laboratory is operated by Battelle for the U.S. Department of Energy under Contract DE-AC06-76RL01830.

  2. Electron stimulated desorption of cesium atoms from germanium-covered tungsten

    NASA Astrophysics Data System (ADS)

    Ageev, V. N.; Kuznetsov, Yu. A.; Madey, T. E.

    2006-05-01

    The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.

  3. Diversity of Functionalized Germanium Zintl Clusters: Syntheses and Theoretical Studies of [Ge9PdPPh3]3- and [Ni@(Ge9PdPPh3)]2-

    SciTech Connect

    Sun, Zhong-Ming; Zhao, Ya-Fan; Li, Jun; Wang, Lai S.

    2009-09-10

    A new Zintl cluster [Ge9PdPPh3]3- has been isolated as (2,2,2-crypt)K+ salt through the reaction of K4Ge9 and Pd[PPh3]4 in ethylenediamine solutions and characterized via single-crystal X-ray crystallography. The as-prepared bimetallic [Ge9PdPPh3]3- cluster could successfully trap a nickel atom to form a trimetallic cluster [Ni@(Ge9PdPPh3)]2-. The coordination of Ge94- by PdPPh3 induces a one-electron oxidation and encapsulation of the Ni atom into the Ge93- cage leads to a further one-electron oxidation and a geometry transformation from C4v (nido) to C3v (closo).

  4. Gamma-ray pulse height spectrum analysis on systems with multiple Ge detectors using a spectrum summing

    SciTech Connect

    Killian, E.W.

    1997-05-01

    A technique has been developed at the Idaho National Engineering Laboratory to sum high resolution gamma-ray pulse spectra from systems with multiple Ge detectors. Lockheed Martin Idaho Technologies Company operates a multi-detector spectrometer configuration at the Stored Waste Examination Pilot Plant facility which is used to characterize the radio nuclide contents in waste drums destined for shipment to Waste Isolation Pilot Plant. This summing technique was developed to increase the sensitivity of the system, reduce the count times required to properly quantify the radionuclides and provide a more consistent methodology for combining data collected from multiple detectors. In spectrometer systems with multiple detectors looking at non homogenous waste forms it is often difficult to combine individual spectrum analysis results from each detector to obtain a meaningful result for the total waste container. This is particularly true when the counting statistics in each individual spectrum are poor. The spectrum summing technique adds the spectra collected by each detector into a single spectrum which has better counting statistics than each individual spectrum. A normal spectral analysis program can then be used to analyze the sum spectrum to obtain radio nuclide values which have smaller errors and do not have to be further manipulated to obtain results for the total waste container.

  5. Germanium implanted with high dose oxygen and its optical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu; Kelly, J. C.; Kenny, M. J.

    1990-05-01

    Single crystal n-type Ge samples are implanted with 1 × 10 17 to 1.5 × 10 18 cm -2 oxygen ions at 45 keV. Infrared and Rutherford backscattering measurements indicate that germanium dioxide is formed. The atomic ratio of oxygen to germanium is near the GeO 2 stoichiometric value of 2.0 from the surface down to a depth of 550 Å for germanium samples implanted to 1.5 × 10 18 cm -2. The excess oxygen is redistributed during the implantation. The results of optical reflectivity measurements indicate that the reflectivity of germanium in the 0.2-1.4 μm wavelength region is greatly reduced after high dose oxygen ion implantation. The reflectivity value at about 0.7 μm is near zero for germanium implanted to a dose of 1.5 × 10 18 cm -2.

  6. Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

    SciTech Connect

    Yang, Xu; Zeng, Zhen-Hua; Wang, Sheng-Kai E-mail: xzhang62@aliyun.com Sun, Bing; Zhao, Wei; Chang, Hu-Dong; Liu, Honggang E-mail: xzhang62@aliyun.com; Zhang, Xiong E-mail: xzhang62@aliyun.com

    2014-09-01

    Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9 × 10{sup 11 }cm{sup −2 }eV{sup −1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

  7. Research on uncooled CdTe gamma detectors as substitutes for ultrapure Ge. Final report 1 Aug 77-31 Jan 80

    SciTech Connect

    Lis, S.A.; Serreze, H.B.; Rusinek, H.; Reich, T.; Youdin, M.

    1980-06-01

    The physics and chemistry of cadmium telluride (CdTe) crystal growth and detector structures were investigated to provide the technological basis for reproducible fabrication of these devices. These gamma ray detectors can provide a unique combination of energy resolution, sensitivity, compactness, and economy (all with room temperature operation)--factors of prime importance for modern nuclear instrumentation. Topics investigated include the THM crystal growth process, mechanisms of metal-semiconductor and metal-electrolyte-semiconductor contact behavior, polarization phenomena, and advanced PIN device structures. Detectors developed under this program were examined for potential use in cerebral blood flow monitors. They were found to possess a number of features which make them appear attractive as substitutes for cryogenically cooled high purity germanium detectors.

  8. Germanium films by polymer-assisted deposition

    DOEpatents

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  9. Ultra High-Rate Germanium (UHRGe) Modeling Status Report

    SciTech Connect

    Warren, Glen A.; Rodriguez, Douglas C.

    2012-06-07

    The Ultra-High Rate Germanium (UHRGe) project at Pacific Northwest National Laboratory (PNNL) is conducting research to develop a high-purity germanium (HPGe) detector that can provide both the high resolution typical of germanium and high signal throughput. Such detectors may be beneficial for a variety of potential applications ranging from safeguards measurements of used fuel to material detection and verification using active interrogation techniques. This report describes some of the initial radiation transport modeling efforts that have been conducted to help guide the design of the detector as well as a description of the process used to generate the source spectrum for the used fuel application evaluation.

  10. Improving CMOS-compatible Germanium photodetectors.

    PubMed

    Li, Guoliang; Luo, Ying; Zheng, Xuezhe; Masini, Gianlorenzo; Mekis, Attila; Sahni, Subal; Thacker, Hiren; Yao, Jin; Shubin, Ivan; Raj, Kannan; Cunningham, John E; Krishnamoorthy, Ashok V

    2012-11-19

    We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

  11. Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

    NASA Astrophysics Data System (ADS)

    Hosoi, Takuji; Minoura, Yuya; Asahara, Ryohei; Oka, Hiroshi; Shimura, Takayoshi; Watanabe, Heiji

    2015-12-01

    Schottky source/drain (S/D) Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated by combining high permittivity (high-k) gate stacks with ultrathin AlOx interlayers and Fermi level depinning process by means of phosphorous ion implantation into NiGe/Ge contacts. Improved thermal stability of the metal/high-k/Ge stacks enabled self-aligned integration scheme for Schottky S/D complementary MOS applications. Significantly reduced parasitic resistance and aggressively scaled high-k gate stacks with sub-1-nm equivalent oxide thickness were demonstrated for both p- and n-channel Schottky Ge-FETs with the proposed combined technology.

  12. The role of oxidized germanium in the growth of germanium nanoparticles on hafnia

    NASA Astrophysics Data System (ADS)

    Winkenwerder, Wyatt A.; Ekerdt, John G.

    2008-08-01

    The role oxidized germanium (GeO x) plays in germanium (Ge) nanoparticle growth on hafnia is reported. Oxide islands, in the form of hafnium germinate, form on hafnia during the initial stages of growth. The Ge adatoms are oxidized by background oxidants, such as water, only when they are in contact with the hafnia surface. Once a sufficient amount of hafnium germinate has formed, Ge nanoparticles nucleate such that nanoparticle growth proceeds by Ge growth on GeO x. Nanoparticles are not deposited on the hafnia but only on the interfacial oxide islands formed early in the growth process. Annealing hafnia in a silane ambient after Ge nanoparticle growth reduces the amount of GeO x and appears to transform it into a hafnium silicate. Furthermore, the electronic and/or chemical interaction between the Ge nanoparticles and the hafnia substrate is changed by the silane annealing step as reflected in the binding energy shift in the Ge 2p signal and the increased retention time of metal-oxide-semiconductor capacitors made from Ge nanoparticles and hafnia. Pretreating hafnia in silane leads to hafnium silicate islands and subsequent Ge nanoparticle growth proceeds on the silicate islands.

  13. Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

    NASA Astrophysics Data System (ADS)

    Hanaoka, M.; Kaneda, H.; Oyabu, S.; Yamagishi, M.; Hattori, Y.; Ukai, S.; Shichi, K.; Wada, T.; Suzuki, T.; Watanabe, K.; Nagase, K.; Baba, S.; Kochi, C.

    2016-07-01

    We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 \\upmu m. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ˜ 200 \\upmu m with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.

  14. A new reaction mode of germanium-silicon bond formation: insertion reactions of H₂GeLiF with SiH₃X (X = F, Cl, Br).

    PubMed

    Yan, Bingfei; Li, Wenzuo; Xiao, Cuiping; Li, Qingzhong; Cheng, Jianbo

    2013-10-01

    A combined density functional and ab initio quantum chemical study of the insertion reactions of the germylenoid H2GeLiF with SiH3X (X = F, Cl, Br) was carried out. The geometries of all the stationary points of the reactions were optimized using the DFT B3LYP method and then the QCISD method was used to calculate the single-point energies. The theoretical calculations indicated that along the potential energy surface, there were one precursor complex (Q), one transition state (TS), and one intermediate (IM) which connected the reactants and the products. The calculated barrier heights relative to the respective precursors are 102.26 (X = F), 95.28 (X = Cl), and 84.42 (X = Br) kJ mol(-1) for the three different insertion reactions, respectively, indicating the insertion reactions should occur easily according to the following order: SiH3-Br > SiH3-Cl > SiH3-F under the same situation. The solvent effects on the insertion reactions were also calculated and it was found that the larger the dielectric constant, the easier the insertion reactions. The elucidations of the mechanism of these insertion reactions provided a new reaction model of germanium-silicon bond formation.

  15. Novel approach for n-type doping of HVPE gallium nitride with germanium

    NASA Astrophysics Data System (ADS)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  16. Wilcoxon signed-rank-based technique for the pulse-shape analysis of HPGe detectors

    NASA Astrophysics Data System (ADS)

    Martín, S.; Quintana, B.; Barrientos, D.

    2016-07-01

    The characterization of the electric response of segmented-contact high-purity germanium detectors requires scanning systems capable of accurately associating each pulse with the position of the interaction that generated it. This process requires an algorithm sensitive to changes above the electronic noise in the pulse shapes produced at different positions, depending on the resolution of the Ge crystal. In this work, a pulse-shape comparison technique based on the Wilcoxon signed-rank test has been developed. It provides a method to distinguish pulses coming from different interaction points in the germanium crystal. Therefore, this technique is a necessary step for building a reliable pulse-shape database that can be used later for the determination of the position of interaction for γ-ray tracking spectrometry devices such as AGATA, GRETA or GERDA. The method was validated by comparison with a χ2 test using simulated and experimental pulses corresponding to a Broad Energy germanium detector (BEGe).

  17. Spin transport in p-type germanium.

    PubMed

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  18. Spin transport in p-type germanium

    NASA Astrophysics Data System (ADS)

    Rortais, F.; Oyarzún, S.; Bottegoni, F.; Rojas-Sánchez, J.-C.; Laczkowski, P.; Ferrari, A.; Vergnaud, C.; Ducruet, C.; Beigné, C.; Reyren, N.; Marty, A.; Attané, J.-P.; Vila, L.; Gambarelli, S.; Widiez, J.; Ciccacci, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2016-04-01

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle {θ\\text{SHE}} in Ge-p (6-7× {{10}-4} ) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  19. A search for GeV-TeV emission from Gamma-ray Bursts using the Milagro detector

    SciTech Connect

    Saz Parkinson, P. M.

    2009-04-08

    The Milagro detector surveyed the sky continuously in the Very High Energy regime from January 2000 through March 2008. During that time, over 130 GRBs were detected and well localized by satellites within its 2 sr field of view. We have used Milagro data to search for >1 GeV emission from these bursts. Milagro is a water Cerenkov detector designed primarily for observations in the 0.1-100 TeV energy range. In the standard mode of operation, Milagro data is used to reconstruct the direction of an incoming high energy particle by analyzing the timing information of a large number of photomultiplier tubes that are triggered in coincidence by the air shower generated when such a particle interacts with the Earth's atmosphere. Milagro data, however, can also be analyzed in 'scaler mode', where the rates of individual photomultiplier tubes can be used to detect emission above 1 GeV (albeit with no directional information). Here we present results from both techniques for all known GRBs detected by BATSE, BeppoSax, HETE-2, INTEGRAL, Swift, and the IPN, within the field of view of Milagro in its 8 years of operation.

  20. Heterojunction Internal Photoemission SiO.7GeO.3/Si Infrared Detector

    NASA Technical Reports Server (NTRS)

    Lin, True Lon

    1994-01-01

    Silicon-compatible detectors are amoung the most promising infrared sensors for large focal plane array applications due to their advantages of uniformity, reliability, and easy integration with low-noise Si readout circuitry.

  1. Nucleon-gold collisions at 200 A GeV using tagged d + Au interactions in the PHOBOS detector

    NASA Astrophysics Data System (ADS)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.; Phobos Collaboration

    2015-09-01

    Forward calorimetry in the PHOBOS detector has been used to study charged hadron production in d +Au , p +Au , and n +Au collisions at √{sN N}=200 GeV . The forward proton calorimeter detectors are described and a procedure for determining collision centrality with these detectors is detailed. The deposition of energy by deuteron spectator nucleons in the forward calorimeters is used to identify p +Au and n +Au collisions in the data. A weighted combination of the yield of p +Au and n +Au is constructed to build a reference for Au +Au collisions that better matches the isospin composition of the gold nucleus. The pT and centrality dependence of the yield of this improved reference system is found to match that of d +Au . The shape of the charged-particle transverse momentum distribution is observed to extrapolate smoothly from p +p ¯ to central d +Au as a function of the charged-particle pseudorapidity density. The asymmetry of positively and negatively charged hadron production in p +Au is compared to that of n +Au . No significant asymmetry is observed at midrapidity. These studies augment recent results from experiments at the CERN Large Hadron Collider and BNL Relativistic Heavy Ion Collider facilities to give a more complete description of particle production in p +A and d +A collisions, essential for the understanding the medium produced in high-energy nucleus-nucleus collisions.

  2. A multielement Ge detector with complete spectrum readout for x-ray fluorescence microprobe and microspectroscopy (abstract)

    NASA Astrophysics Data System (ADS)

    Rivers, Mark L.; Sutton, Stephen R.; Rarback, Harvey

    1995-02-01

    Multielement Ge and Si(Li) detectors have been used in recent years to improve the increase count rate capability and to improve the solid-angle efficiency in fluorescence x-ray absorption spectroscopy (XAS). Such systems have typically been equipped with one or more single-channel analyzers (SCAs) for each detector element. Such SCA-based electronics are sufficient when only the counts in one or two well-resolved peaks are of interest. For the fluorescence (XRF) microprobe at beamline X-26A at the NSLS, SCA-based electronics were not a satisfactory solution for two reasons: (1) for XRF experiments, the entire fluorescence spectrum is required; (2) for micro-XAS studies of trace elements in complex systems, the fluorescence peak often sits on a significant background or partially overlaps another fluorescence peak, requiring software background subtraction or peak deconvolution. An electronics system which permits collection of the entire fluorescence spectrum from each detector element has been designed. The system is made cost-effective by the use of analog multiplexors, reducing the number of analog-to-digital converters (ADCs) and multichannel analyzers (MCAs) required. The system was manufactured by Canberra Industries and consists of: (1) a 13 element Ge detector (11 mm diameter detector elements), (2) 13 NIM spectroscopy amplifiers with programmable gains, (3) four analog multiplexors with maximum of eight inputs each, (4) four ADCs with programmable offsets and gains and 800 ns conversion time, and (5) two MCAs with Ethernet communications ports and two ADC inputs each. The amplifiers have shaping times which are adjustable from 0.5 to 12 μs. The analog multiplexors were modified to perform pileup rejection. The analog multiplexing does not significantly reduce the count rate capability of the system, even at the shortest amplifier shaping times. The average detector resolution is 170 eV at 12 μs shaping time and 200 eV at 4 μs shaping time. The maximum

  3. Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.

    PubMed

    Zhang, Qingfang; Liu, Yan; Yan, Jing; Zhang, Chunfu; Hao, Yue; Han, Genquan

    2015-03-23

    We theoretically investigate a tensile strained GeSn waveguide integrated with Si₃N₄ liner stressor for the applications in mid-infrared (MIR) detector and modulator. A substantial tensile strain is induced in a 1 × 1 μm² GeSn waveguide by the expansion of 500 nm Si₃N₄ liner stressor and the contour plots of strain are simulated by the finite element simulation. Under the tensile strain, the direct bandgap E(G,Γ) of GeSn is significantly reduced by lowering the Γ conduction valley in energy and lifting of degeneracy of valence bands. Absorption coefficients of tensile strained GeSn waveguides with different Sn compositions are calculated. As the Si₃N₄ liner stressor expands by 1%, the cut-off wavelengths of tensile strained Ge(0.97)Sn(0.03), Ge(0.95)Sn(0.05), and Ge(0.90)Sn(0.10) waveguide photodetectors are extended to 2.32, 2.69, and 4.06 μm, respectively. Tensile strained Ge(0.90)Sn(0.10) waveguide electro-absorption modulator based on Franz-Keldysh (FK) effect is demonstrated in theory. External electric field dependence of cut-off wavelength and propagation loss of tensile strained Ge(0.90)Sn(0.10) waveguide is observed, due to the FK effect.

  4. Reducing multiplexing artifacts in multi-pinhole SPECT with a stacked silicon-germanium system: a simulation study.

    PubMed

    Johnson, Lindsay C; Shokouhi, Sepideh; Peterson, Todd E

    2014-12-01

    In pinhole single photon emission computed tomography (SPECT), multi-pinhole collimators can increase sensitivity but may lead to projection overlap, or multiplexing, which can cause image artifacts. In this work, we explore whether a stacked-detector configuration with a germanium and a silicon detector, used with 123I (27-32, 159 keV), where little multiplexing occurs in the Si projections, can reduce image artifacts caused by highly-multiplexed Ge projections. Simulations are first used to determine a reconstruction method that combines the Si and Ge projections to maximize image quality. Next, simulations of different pinhole configurations (varying projection multiplexing) in conjunction with digital phantoms are used to examine whether additional Si projections mitigate artifacts from the multiplexing in the Ge projections. Reconstructed images using both Si and Ge data are compared to those using Ge data alone. Normalized mean-square error and normalized standard deviation provide a quantitative evaluation of reconstructed images' error and noise, respectively, and are used to evaluate the impact of the additional nonmultiplexed data on image quality. For a qualitative comparison, the differential point response function is used to examine multiplexing artifacts. Results show that in cases of highly-multiplexed Ge projections, the addition of low-multiplexed Si projections helps to reduce image artifacts both quantitatively and qualitatively.

  5. Solution-processable white-light-emitting germanium nanocrystals

    SciTech Connect

    Shirahata, Naoto

    2014-06-01

    This paper describes an efficient chemical route for the synthesis of visible light emitting nanocrystals of germanium (ncGe). The synthesis started by heating Ge(II) iodide at 300 °C in argon atmosphere. Spectroscopic characterizations confirmed the formation of diamond cubic lattice structures of ncGe. By grafting hydrophobic chains on the ncGe surface, the dispersions in nonpolar solvents of the ncGe became very stable. The as-synthesized ncGe showed the bluish white photoluminescence (PL) feature, but it was found that the PL spectrum is composed of many different emission spectra. Therefore, the color-tuning of white light emission is demonstrated through the witting removal of extra ncGe with unfavorable emission feature by making full use of column chromatographic techniques. - Highlights: • Visible light emitting nanocrystals of germanium was synthesized by chemical reduction of germanium iodide. • White light emission was achieved by control over size distribution of germanium nanocrystals. • Tuning the color of white light was achieved by separation of nanocrystals by emission.

  6. Ion Implanted Ge:B Far Infrard Blocked Impurity BandDetectors

    SciTech Connect

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2006-06-12

    Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be {approx} 4 x 10{sup 16} cm{sup -3}. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to {approx} 45 cm{sup -1}, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 x 10{sup -15} W/Hz{sup -1/2}.

  7. A maximum likelihood analysis of the CoGeNT public dataset

    NASA Astrophysics Data System (ADS)

    Kelso, Chris

    2016-06-01

    The CoGeNT detector, located in the Soudan Underground Laboratory in Northern Minnesota, consists of a 475 grams (fiducial mass of 330 grams) target mass of p-type point contact germanium detector that measures the ionization charge created by nuclear recoils. This detector has searched for recoils created by dark matter since December of 2009. We analyze the public dataset from the CoGeNT experiment to search for evidence of dark matter interactions with the detector. We perform an unbinned maximum likelihood fit to the data and compare the significance of different WIMP hypotheses relative to each other and the null hypothesis of no WIMP interactions. This work presents the current status of the analysis.

  8. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    PubMed

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  9. Na-doped optical Germanium bulk crystals

    NASA Astrophysics Data System (ADS)

    Pekar, G. S.; Singaevsky, A. F.

    2012-09-01

    In an effort to develop a material for infrared (IR) optics with improved parameters, bulk crystals of optical germanium doped with Na have been first grown and studied. Single-crystalline and coarse-crystalline Ge:Na boules of different shapes and dimensions, up to 10 kg by weight, have been grown. Sodium was incorporated into the Ge crystal during the crystal growing from the melt. Despite the fact that Na contamination in the source material was not strictly controlled, the density of Na in the grown crystals determined by the neutron activation analysis as well as by the glow discharge mass spectrometry did not exceed 1015 cm-3. Just this value may be supposed to be close to the solubility limit of Na incorporated in Ge in the course of bulk crystal growth. A first demonstration of donor behavior of Na in bulk Ge crystals is made by means of a thermoelectric type of testing. An interstitial location of Na impurity has been verified by experiments on donor drift in the dc electric field. The crystals are grown with free electron density in the range from 5ṡ1013 to 4ṡ1014 cm-3 which is optimal for using Ge crystals as an optical material for fabricating passive elements of the IR technique. A comparison between the properties of Ge:Na crystals and Ge crystals doped with Sb, a conventional impurity in optical germanium, grown under the same technological conditions and from the same intrinsic Ge as a source material, revealed a number of advantages of Ge:Na crystals; among them, the higher transparency in the IR region, smaller radiation scattering and higher regular optical transmission, lower dislocation density, more uniform distribution of electrical and optical characteristics over the crystal volume, the identity of optical parameters in the single-crystalline, and coarse-crystalline boules. No degradation of optical elements fabricated from Ge:Na crystals was detected in the course of their commercial application, starting from 1998.

  10. On-line neutron capture gamma analysis with a Ge detector

    NASA Astrophysics Data System (ADS)

    Uusitalo, Seppo; Lukander, Tuula

    Semiconductor gamma detectors are practicable in on-line neutron capture gamma ray analysis of ore concentrates, when heavy water and graphite are used as moderators. A suitable moderator geometry was found using Monte Carlo simulation. An experimental system was constructed and used to measure copper and nickel concentrate samples taken from the feed of a flash smelting furnace.

  11. Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

    NASA Astrophysics Data System (ADS)

    Bracht, H.; Schneider, S.; Klug, J. N.; Liao, C. Y.; Hansen, J. Lundsgaard; Haller, E. E.; Larsen, A. Nylandsted; Bougeard, D.; Posselt, M.; Wündisch, C.

    2009-12-01

    We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.

  12. Ionizing Radiation Detectors Based on Ge-Doped Optical Fibers Inserted in Resonant Cavities

    PubMed Central

    Avino, Saverio; D’Avino, Vittoria; Giorgini, Antonio; Pacelli, Roberto; Liuzzi, Raffaele; Cella, Laura; De Natale, Paolo; Gagliardi, Gianluca

    2015-01-01

    The measurement of ionizing radiation (IR) is a crucial issue in different areas of interest, from environmental safety and industrial monitoring to aerospace and medicine. Optical fiber sensors have recently proven good candidates as radiation dosimeters. Here we investigate the effect of IR on germanosilicate optical fibers. A piece of Ge-doped fiber enclosed between two fiber Bragg gratings (FBGs) is irradiated with gamma radiation generated by a 6 MV medical linear accelerator. With respect to other FBG-based IR dosimeters, here the sensor is only the bare fiber without any special internal structure. A near infrared laser is frequency locked to the cavity modes for high resolution measurement of radiation induced effects on the fiber optical parameters. In particular, we observe a variation of the fiber thermo-optic response with the radiation dose delivered, as expected from the interaction with Ge defect centers, and demonstrate a detection limit of 360 mGy. This method can have an impact in those contexts where low radiation doses have to be measured both in small volumes or over large areas, such as radiation therapy and radiation protection, while bare optical fibers are cheap and disposable. PMID:25686311

  13. Enhanced performance of Si opto-devices by SiGe nanostructures

    NASA Astrophysics Data System (ADS)

    Presting, Hartmut; Konle, Johannes; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf

    2001-05-01

    Ultrathin silicon/germanium (SiGe) quantum well (QW) and short-period SimGen superlattice structures have been grown by molecular beam epitaxy (MBE) on <100$GTR Si substrates. Si/SiGe detectors in the near infrared (IR; 1.3(mu) ) for optical communication and mid-infrared (3(mu) -5(mu) ; 8(mu) -12(mu) ) regime for heat sensing applications have been fabricated and characterized. The SiGe detectors for the mid IR are based on hetero-internal photoemission (HIP) from a highly p-doped SiGe quantum well into an undoped Si layer. These SiGe HIP-heterostructures allow the possibility to tailor the photoresponse and cut-off wavelength for IR-detectors by changing the Ge-content and QW width of the active layers. External quantum efficiencies up to 0.6% at 77K have been achieved from HIP-detectors and detectivities in excess of 8x1011cmHz0.5/W at 77 Kelvin have been obtained for Si/SiGe multiple quantum well (MQW) detectors. We have also studied nano-scaled, three dimensional Ge islands grown by self-organized Stranski-Krastanov growth. The Ge-islands are deposited in the base of a Si solar cell to increase the quantum efficiency and are investigated by atomic force microscopy (AFM), photoluminescence and photocurrent measurements. They have been grown with varying conditions and exhibit three dimensional growth in a small temperature regime between 500 degree(s)C and 700 degree(s)C for Ge-thicknesses above 4ML.

  14. Nucleon-gold collisions at 200A GeV using tagged d + Au interactions in the PHOBOS detector

    DOE PAGESBeta

    Back, B. B.; Nouicer, R.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A; Stienberg, P.; Ioradnova, A.; et al

    2015-09-23

    Forward calorimetry in the PHOBOS detector has been used to study charged hadron production in d+Au, p+Au, and n+Au collisions at √sNN =200GeV. The forward proton calorimeter detectors are described and a procedure for determining collision centrality with these detectors is detailed. The deposition of energy by deuteron spectator nucleons in the forward calorimeters is used to identify p+Au and n+Au collisions in the data. A weighted combination of the yield of p+Au and n+Au is constructed to build a reference for Au+Au collisions that better matches the isospin composition of the gold nucleus. The pT and centrality dependence ofmore » the yield of this improved reference system is found to match that of d+Au. The shape of the charged-particle transverse momentum distribution is observed to extrapolate smoothly from p+p¯ to central d+Au as a function of the charged-particle pseudorapidity density. The asymmetry of positively and negatively charged hadron production in p+Au is compared to that of n+Au. No significant asymmetry is observed at midrapidity. In conclusion, these studies augment recent results from experiments at the CERN Large Hadron Collider and BNL Relativistic Heavy Ion Collider facilities to give a more complete description of particle production in p+A and d+A collisions, essential for the understanding the medium produced in high-energy nucleus-nucleus collisions.« less

  15. Nucleon-gold collisions at 200A GeV using tagged d + Au interactions in the PHOBOS detector

    SciTech Connect

    Back, B. B.; Nouicer, R.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A; Stienberg, P.; Ioradnova, A.; Pak, R.; Sukhanov, A.

    2015-09-23

    Forward calorimetry in the PHOBOS detector has been used to study charged hadron production in d+Au, p+Au, and n+Au collisions at √sNN =200GeV. The forward proton calorimeter detectors are described and a procedure for determining collision centrality with these detectors is detailed. The deposition of energy by deuteron spectator nucleons in the forward calorimeters is used to identify p+Au and n+Au collisions in the data. A weighted combination of the yield of p+Au and n+Au is constructed to build a reference for Au+Au collisions that better matches the isospin composition of the gold nucleus. The pT and centrality dependence of the yield of this improved reference system is found to match that of d+Au. The shape of the charged-particle transverse momentum distribution is observed to extrapolate smoothly from p+p¯ to central d+Au as a function of the charged-particle pseudorapidity density. The asymmetry of positively and negatively charged hadron production in p+Au is compared to that of n+Au. No significant asymmetry is observed at midrapidity. In conclusion, these studies augment recent results from experiments at the CERN Large Hadron Collider and BNL Relativistic Heavy Ion Collider facilities to give a more complete description of particle production in p+A and d+A collisions, essential for the understanding the medium produced in high-energy nucleus-nucleus collisions.

  16. Tensile strain mapping in flat germanium membranes

    SciTech Connect

    Rhead, S. D. Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R.; Shah, V. A.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.; Sotomayor Torres, C. M.

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  17. Application of epithermal neutron activation in multielement analysis of silicate rocks employing both coaxial Ge(Li) and low energy photon detector systems

    USGS Publications Warehouse

    Baedecker, P.A.; Rowe, J.J.; Steinnes, E.

    1977-01-01

    The instrumental activation analysis of silicate rocks using epithermal neutrons has been studied using both high resolution coaxial Ge(Li) detectors and low energy photon detectors, and applied to the determination of 23 elements in eight new U.S.G.S. standard rocks. The analytical use X-ray peaks associated with electron capture or internal conversion processes has been evaluated. Of 28 elements which can be considered to be determinable by instrumental means, the epithermal activation approach is capable of giving improved sensitivity and precision in 16 cases, over the normal INAA procedure. In eleven cases the use of the low energy photon detector is thought to show advantages over convertional coaxial Ge(Li) spectroscopy. ?? 1977 Akade??miai Kiado??.

  18. GERDA phase II detectors: Behind the production and characterisation at low background conditions

    SciTech Connect

    Maneschg, Werner; Collaboration: GERDA Collaboration; and others

    2013-08-08

    The low background GERmanium Detector Array (GERDA) at Laboratori Nazionali del Gran Sasso (LNGS) is designed to search for the rare neutrinoless double beta decay (0νββ) in {sup 76}Ge. Bare germanium diodes are operated in liquid argon which is used as coolant, as passive and soon active as well shield against external radiation. Currently, Phase I of the experiment is running using ∼15 kg of co-axial High Purity Germanium diodes. In order to increase the sensitivity of the experiment 30 Broad Energy Germanium (BEGe) diodes will be added within 2013. This presentation reviews the production chain of the new BEGe detectors from isotopic enrichment to diode production and testing. As demonstrated all steps were carefully planned in order to minimize the exposure of the enriched germanium to cosmic radiation. Following this premise, acceptance and characterisation measurement of the newly produced diodes have been performed within the HEROICA project in the Belgian underground laboratory HADES close to the diode manufacturer. The test program and the results from a subset of the recently terminated GERDA Phase II BEGe survey will be presented.

  19. Development of a Germanium Small-Animal SPECT System

    PubMed Central

    Johnson, Lindsay C.; Ovchinnikov, Oleg; Shokouhi, Sepideh; Peterson, Todd E.

    2015-01-01

    Advances in fabrication techniques, electronics, and mechanical cooling systems have given rise to germanium detectors suitable for biomedical imaging. We are developing a small-animal SPECT system that uses a double-sided Ge strip detector. The detector’s excellent energy resolution may help to reduce scatter and simplify processing of multi-isotope imaging, while its ability to measure depth of interaction has the potential to mitigate parallax error in pinhole imaging. The detector’s energy resolution is <1% FWHM at 140 keV and its spatial resolution is approximately 1.5 mm FWHM. The prototype system described has a single-pinhole collimator with a 1-mm diameter and a 70-degree opening angle with a focal length variable between 4.5 and 9 cm. Phantom images from the gantry-mounted system are presented, including the NEMA NU-2008 phantom and a hot-rod phantom. Additionally, the benefit of energy resolution is demonstrated by imaging a dual-isotope phantom with 99mTc and 123I without cross-talk correction. PMID:26755832

  20. Germanium, carbon-germanium, and silicon-germanium triangulenes.

    PubMed

    Gapurenko, Olga A; Starikov, Andrey G; Minyaev, Ruslan M; Minkin, Vladimir I

    2015-11-01

    A series of germanium-containing triangular molecules have been studied by density functional theory (DFT) calculations. The triangulene topology of the compounds provides for their high-spin ground states and strong sign alternation of spin density and atomic charge distributions. High values of the exchange coupling constants witness ferromagnetic ordering of electronic structures of all studied triangulenes. The compounds bearing more electronegative atoms in a-positions of the triangular networks possess higher aromatic character and stronger ferromagnetic ordering.

  1. Development of a gallium-doped germanium far-infrared photoconductor direct hybrid two-dimensional array.

    PubMed

    Fujiwara, Mikio; Hirao, Takanori; Kawada, Mitsunobu; Shibai, Hiroshi; Matsuura, Shuji; Kaneda, Hidehiro; Patrashin, Mikhail; Nakagawa, Takao

    2003-04-20

    To our knowledge, we are the first to successfully report a direct hybrid two-dimensional (2D) detector array in the far-infrared region. Gallium-doped germanium (Ge:Ga) has been used extensively to produce sensitive far-infrared detectors with a cutoff wavelength of approximately equal to 110 microm (2.7 THz). It is widely used in the fields of astronomy and molecular and solid spectroscopy. However, Ge:Ga photoconductors must be cooled below 4.2 K to reduce thermal noise, and this operating condition makes it difficult to develop a large format array because of the need for a warm amplifier. Development of Ge:Ga photoconductor arrays to take 2D terahertz images is now an important target in such research fields as space astronomy. We present the design of a 20 x 3 Ge:Ga far-infrared photoconductor array directly hybridized to a Si p-type metal-oxide-semiconductor readout integrated circuit using indium-bump technology. The main obstacles in creating this 2D array were (1) fabricating a monolithic Ge:Ga 2D array with a longitudinal configuration, (2) developing a cryogenic capacitive transimpedance amplifer, and (3) developing a technology for connecting the detector to the electronics. With this technology, a prototype Ge:Ga photoconductor with a direct hybrid structure has shown a responsivity as high as 14.6 A/W and a minimum detectable power of 5.6 x 10(-17) W for an integration time of 0.14 s when it was cooled to 2.1 K. Its noise is limited by the readout circuit with 20 microV/Hz(1/2) at 1 Hz. Vibration and cooling tests demonstrated that this direct hybrid structure is strong enough for spaceborne instruments. This detector array will be installed on the Japanese infrared satellite ASTRO-F. PMID:12716158

  2. Chalcogenide and germanium hybrid optics

    NASA Astrophysics Data System (ADS)

    Cogburn, Gabriel

    2011-11-01

    When choosing a material to design infrared optics, an optical designer has to decide which material properties are most important to what they are trying to achieve. Factors include; cost, optical performance, index of material, sensor format, manufacturability, mechanical mounting and others. This paper will present an optical design that is made for a 640×480, 17μm sensor and is athermalized by using the material properties of chalcogenide glass and Germanium (Ge). The optical design will be a 3-element, f1.0 optic with an EFL of 20mm at 10μm. It consists of two Ge spherical lenses and a middle chalcogenide aspheric element. By using Ge and chalcogenide, this design utilizes the high index of Ge and combines it with the lower dn/dt of chalcogenide glass to provide an athermalized design without the use of additional electro-optical compensation inside the assembly. This study will start from the optical design process and explain the mechanical and optical properties of the design, then show the manufacturing process of molding an aspheric chalcogenide element. After the three elements are manufactured, they will be assembled and tested throughout the temperature range of -40 to 85°C to compare optical performance to design expectations. Ultimately, this paper will show that a high performance, athermalized optical assembly is possible to manufacture at a lower cost with the use of combining different infrared materials that allow for spherical Ge lenses and only one aspherical chalcogenide element which can be produced in higher volumes at lower costs through glass molding technology.

  3. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress

    NASA Astrophysics Data System (ADS)

    Carroll, M. S.; Verley, J. C.; Sheng, J. J.; Banks, J.

    2007-03-01

    Hydrogenated amorphous germanium (a-Ge:H) is a material of interest for optoelectronic applications such as solar cells and radiation detectors because of the material's potential to extend the wavelength sensitivity of hydrogenated amorphous silicon (a-Si:H). An increase in porosity is observed in amorphous germanium compared to a-Si :H, and this increase in porosity has been correlated with a degradation of the electrical performance. Improved understanding of the mechanisms of porous formation in a-Ge :H films is therefore desirable in order to better control it. In this paper we describe a correlation between film stress and surface roughness, which evolves with increasing thickness of a-Ge :H. A roughening transition from planar two-dimensional growth to three-dimensional growth at a critical thickness less than 800Å results in a network of needlelike nanotrench cavities which stretch from the transition thickness to the surface in films up to 4000Å thick. Surface roughness measurements by atomic force microscope and transmission electron microscopy indicate that the transition is abrupt and that the roughness increases linearly after the transition thickness. The roughening transition thickness is, furthermore, found to correlate with the maxima of the integrated compressive stress. The compressive stress is reduced after this transition thickness due to the incorporation of nanovoids into the film that introduce tensile stress as the islands coalesce together. The roughening transition behavior is similar to that found in a general class of Volmer-Weber mode thin film deposition (e.g., Cu, Ag, and nonhydrogenated amorphous silicon), which offers additional insight into the underlying mechanisms of the stress and roughening in these a-Ge :H films. The suppression of the roughening transition by changing the kinetics of the deposition rates (e.g., slowing the deposition rate with a weak sputtering bias) is also observed and discussed.

  4. Novel metastable metallic and semiconducting germaniums

    PubMed Central

    Selli, Daniele; Baburin, Igor A.; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues. PMID:23492980

  5. Research progress of Si-based germanium materials and devices

    NASA Astrophysics Data System (ADS)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  6. Lithium drifted germanium system

    NASA Technical Reports Server (NTRS)

    Fjarlie, E. J.

    1969-01-01

    General characteristics of the lithium-drifted germanium photodiode-Dewar-preamplifier system and particular operating instructions for the device are given. Information is included on solving operational problems.

  7. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    NASA Astrophysics Data System (ADS)

    Karacheban, O.; Afanaciev, K.; Hempel, M.; Henschel, H.; Lange, W.; Leonard, J. L.; Levy, I.; Lohmann, W.; Schuwalow, S.

    2015-08-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond sensors are widely used. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm2 size and 525 μ m thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency measured as a function of the bias voltage rises with the voltage, reaching about 10% at 095 V. The signal size obtained from electrons crossing the stack at this voltage is about 02200 e, where e is the unit charge. The signal size is measured as a function of the hit position, showing variations of up to 20% in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarisation field was observed.

  8. Tunnel current across linear homocatenated germanium chains

    SciTech Connect

    Matsuura, Yukihito

    2014-01-28

    The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e{sup −βL}, of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge–Ge bond length is longer than the Si–Si bond length.

  9. Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

    SciTech Connect

    Bandaru, Jordana; Beeman, Jeffrey W.; Haller, Eugene E.; Samperi, Stacy; Haegel, Nancy M.

    2002-02-06

    Extended long wavelength response to {approx}200 {micro}m (50 cm{sup -1}) has been observed in Ge:Sb Blocked Impurity Band (BIB) detectors with N{sub D} {approx} 1 x 10{sup 16} cm{sup -3}. The cut-off wavelength increases from 150 {micro}m (65 cm{sup -1}) to 200 {micro}m (50 cm{sup -1}) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected.

  10. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

  11. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    PubMed

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content. PMID:27483856

  12. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

    SciTech Connect

    Wang, Dong Maekura, Takayuki; Kamezawa, Sho; Yamamoto, Keisuke; Nakashima, Hiroshi

    2015-02-16

    We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified.

  13. Next Generation Device Grade Silicon-Germanium on Insulator

    PubMed Central

    Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F.; Watts, John F.; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2015-01-01

    High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment. PMID:25656076

  14. Reduction of phosphorus diffusion in germanium by fluorine implantation

    NASA Astrophysics Data System (ADS)

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  15. Reduction of phosphorus diffusion in germanium by fluorine implantation

    SciTech Connect

    El Mubarek, H. A. W.

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  16. Study of the process e+e-→ω η π0 in the energy range √{s }<2 GeV with the SND detector

    NASA Astrophysics Data System (ADS)

    Achasov, M. N.; Aulchenko, V. M.; Barnyakov, A. Yu.; Beloborodov, K. I.; Berdyugin, A. V.; Berkaev, D. E.; Bogdanchikov, A. G.; Botov, A. A.; Dimova, T. V.; Druzhinin, V. P.; Golubev, V. B.; Kardapoltsev, L. V.; Kharlamov, A. G.; Koop, I. A.; Korol, A. A.; Kovrizhin, D. P.; Koshuba, S. V.; Kupich, A. S.; Lysenko, A. P.; Melnikova, N. A.; Martin, K. A.; Pakhtusova, E. V.; Obrazovsky, A. E.; Perevedentsev, E. A.; Rogovsky, Yu. A.; Serednyakov, S. I.; Silagadze, Z. K.; Shatunov, Yu. M.; Shatunov, P. Yu.; Shtol, D. A.; Skrinsky, A. N.; Surin, I. K.; Tikhonov, Yu. A.; Usov, Yu. V.; Vasiljev, A. V.; Zemlyansky, I. M.

    2016-08-01

    The process e+e-→ω η π0 is studied in the energy range 1.45-2.00 GeV using data with an integrated luminosity of 33 pb-1 accumulated by the SND detector at the e+e- collider VEPP-2000. The e+e-→ω η π0 cross section is measured for the first time. The cross section has a threshold near 1.75 GeV. Its value is about 2 nb in the energy range 1.8-2.0 GeV. The dominant intermediate state for the process e+e-→ω η π0 is found to be ω a0(980 ).

  17. Search for the Top Quark in e+e- Annihilation at \\sqrt{s}{=}50 GeV: The First Result from the VENUS Detector at TRISTAN

    NASA Astrophysics Data System (ADS)

    Abe, Koya; Amako, Katsuya; Arai, Yasuo; Asano, Yuzo; Boerner, Herbert; Chiba, Masami; Chiba, Yasuo; Daigo, Motomasa; Emura, Tsuneo; Endo, Ichita; Fukawa, Mineo; Fukui, Toru; Fukushima, Yasutaka; Haba, Junji; Hayashibara, Izumi; Hemmi, Yasuo; Higuchi, Masato; Hirose, Tachishige; Hojyo, Yoshifumi; Homma, Yasuhiro; Hoshi, Yoshimoto; Ikegami, Yoichi; Ishihara, Nobuhiro; Kamitani, Takuya; Kanematsu, Nobuyuki; Kanzaki, Junichi; Kikuchi, Ryusaburo; Kondo, Takahiko; Koseki, Tadashi; Kubo, Kiyoshi; Kurashige, Hisaya; Maehata, Keisuke; Matsui, Takayuki; Minami, Masayuki; Miyake, Kozo; Mori, Shigeki; Nagashima, Yorikiyo; Nakagawa, Yuji; Nakamura, Teruo; Nakano, Itsuo; Noguchi, Yoshiei; Odaka, Shigeru; Ogawa, Kazuo; Ohama, Taro; Ohsugi, Takashi; Ono, Atsuo; Osabe, Hitoshi; Saito, Hitoshi; Sakae, Hisaharu; Sakamoto, Hiroshi; Sakamoto, Shizuo; Sakano, Misao; Sakuda, Makoto; Sasao, Noboru; Sato, Minoru; Shioden, Masaomi; Shirai, Junpei; Suekane, Fumihiko; Sugimoto, Shojiro; Sumiyoshi, Takayuki; Suzuki, Yoichiro; Takada, Yoshihisa; Takasaki, Fumihiko; Taketani, Atsushi; Tamura, Norio; Tanaka, Reisaburo; Teramoto, Yoshiki; Tobimatsu, Keijiro; Tsuboyama, Toru; Tsukamoto, Akira; Uehara, Sadaharu; Unno, Yoshinobu; Wakai, Mikio; Wake, Masayoshi; Watanabe, Takashi; Watase, Yoshiyuki; Yamada, Yoshikazu; Yamagata, Taketora; Yamashita, Toshihiro; Yoshida, Hajime

    1987-11-01

    A result of the search for the top quark in e+e- annihilation into hadrons at \\sqrt{s}{=}50 GeV is presented. The experiment has been performed using the VENUS detector at TRISTAN. No evidence has been found for the production of the top quark. From the study using the event shape of the multihadron events, the upper limit of the production cross section is found to be 16 pb at the 95% confidence level.

  18. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    NASA Astrophysics Data System (ADS)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  19. A measurement method of a detector response function for monochromatic electrons based on the Compton scattering

    NASA Astrophysics Data System (ADS)

    Bakhlanov, S. V.; Bazlov, N. V.; Derbin, A. V.; Drachnev, I. S.; Kayunov, A. S.; Muratova, V. N.; Semenov, D. A.; Unzhakov, E. V.

    2016-06-01

    In this paper we present a method of scintillation detector energy calibration using the gamma-rays. The technique is based on the Compton scattering of gamma-rays in a scintillation detector and subsequent photoelectric absorption of the scattered photon in the Ge-detector. The novelty of this method is that the source of gamma rays, the germanium and scintillation detectors are immediately arranged adjacent to each other. The method presents an effective solution for the detectors consisting of a low atomic number materials, when the ratio between Compton effect and photoelectric absorption is large and the mean path of gamma-rays is comparable to the size of the detector. The technique can be used for the precision measurements of the scintillator light yield dependence on the electron energy.

  20. Characterisation of two AGATA asymmetric high purity germanium capsules

    NASA Astrophysics Data System (ADS)

    Colosimo, S. J.; Moon, S.; Boston, A. J.; Boston, H. C.; Cresswell, J. R.; Harkness-Brennan, L.; Judson, D. S.; Lazarus, I. H.; Nolan, P. J.; Simpson, J.; Unsworth, C.

    2015-02-01

    The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

  1. Reliability assessment of germanium gate stacks with promising initial characteristics

    NASA Astrophysics Data System (ADS)

    Lu, Cimang; Lee, Choong Hyun; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2015-02-01

    This work reports on the reliability assessment of germanium (Ge) gate stacks with promising initial electrical properties, with focus on trap generation under a constant electric stress field (Estress). Initial Ge gate stack properties do not necessarily mean highly robust reliability when it is considered that traps are newly generated under high Estress. A small amount of yttrium- or scandium oxide-doped GeO2 (Y-GeO2 or Sc-GeO2, respectively) significantly reduces trap generation in Ge gate stacks without deterioration of the interface. This is explained by the increase in the average coordination number (Nav) of the modified GeO2 network that results from the doping.

  2. Towards monolithic integration of germanium light sources on silicon chips

    NASA Astrophysics Data System (ADS)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  3. Conduction band discontinuity and electron confinement at the SixGe1-x/Ge interface

    NASA Astrophysics Data System (ADS)

    Mazzeo, G.; Yablonovitch, E.; Jiang, H. W.; Bai, Y.; Fitzgerald, E. A.

    2010-05-01

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the conduction band profile of germanium rich heterostructures allow the implementation of g-factor modulation devices not possible in Silicon. We here prove that electrons can indeed be trapped at the Si0.1Ge0.9/Ge interface and we measure the height of the energy barrier to 0.55±0.05 eV by measuring the tunneling time of electrons as a function of the electric field.

  4. A probe for neutron activation analysis in a drill hole using 252Cf, and a Ge(Li) detector cooled by a melting cryogen

    USGS Publications Warehouse

    Tanner, A.B.; Moxham, R.M.; Senftle, F.E.; Baicker, J.A.

    1972-01-01

    A sonde has been built for high-resolution measurement of natural or neutron-induced gamma rays in boreholes. The sonde is 7.3 cm in diameter and about 2.2 m in length and weighs about 16 kg. The lithium-compensated germanium semiconductor detector is stabilized at -185 to -188??C for as much as ten hours by a cryostatic reservoir containing melting propane. During periods when the sonde is not in use the propane is kept frozen by a gravity-fed trickle of liquid nitrogen from a reservoir temporarily attached to the cryostat section. A 252Cf source, shielded from the detector, may be placed in the bottom section of the sonde for anlysis by measurement of neutron-activation or neutron-capture gamma rays. Stability of the cryostat with changing hydrostatic pressure, absence of vibration, lack of need for power to the cryostat during operation, and freedom of orientation make the method desirable for borehole, undersea, space, and some laboratory applications. ?? 1972.

  5. Determination of Barium and selected rare-earth elements in geological materials employing a HpGe detector by radioisotope excited x-ray fluorescence

    SciTech Connect

    LaBrecque, J.J.; Preiss, I.L.

    1984-01-01

    The laterite material (geological) from Cerro Impacto was first studied by air radiometric techniques in the 1970's and was found to have an abnormally high radioactive background. Further studies showed this deposit to be rich in thorium, columbium, barium and rare-earth elements (mostly La, Ce, Pr and Nd). A similar work has been reported for the analysis of Brazil's lateritic material from Morro do Ferro to determine elemental compositions (including barium and rare-earth elements) and its relationship to the mobilization of thorium from the deposit using a Co-57 radioisotope source. The objective of this work was to develop an analytical method to determine barium and rare-earth element present in Venezuelan lateritic material from Cerro Impacto. We have employed a method before, employing a Si(Li) detector, but due to the low detection efficiencies in the rare-earth K-lines region (about 30 KeV - 40 KeV), we have decided to study the improvement in sensitivities and detection limits using an hyperpure germanium detector.

  6. Effects of a lactobacilli, oligosaccharide and organic germanium intake on the immune responses of mice.

    PubMed

    Nakamura, Takashi; Saito, Miki; Aso, Hisashi

    2012-01-01

    The organic germanium compound, Ge-132, has immune-modulating effects. We evaluated the symbiotic effects of Ge-132 with lactobacilli and oligosaccharide (LB/OS) on the immune responses of mice. The highest fecal IgA levels were observed in the mice receiving a low concentration of Ge-132 with LB/OS for 8 weeks. Our data suggest that LB/OS with a low concentration of Ge-132 stimulated the intestinal immunity.

  7. Protective infrared antireflection coating based on sputtered germanium carbide

    NASA Astrophysics Data System (ADS)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  8. Evaluation of the neutron background in an HPGe target for WIMP direct detection when using a reactor neutrino detector as a neutron veto system

    SciTech Connect

    Ji, Xiangpan; Xu, Ye Lin, Junsong; Feng, Yulong; Li, Haolin

    2013-11-15

    A direct WIMP (weakly interacting massive particle) detector with a neutron veto system is designed to better reject neutrons. The experimental configuration is studied in this paper involves 984 Ge modules placed inside a reactor-neutrino detector. The neutrino detector is used as a neutron veto device. The neutron background for the experimental design is estimated using the Geant4 simulation. The results show that the neutron background can decrease to O(0.01) events per year per tonne of high-purity germanium and it can be ignored in comparison with electron recoils.

  9. Measurements of gamma (γ)-emitting radionuclides with a high-purity germanium detector: the methods and reliability of our environmental assessments on the Fukushima 1 Nuclear Power Plant accident.

    PubMed

    Mimura, Tetsuro; Mimura, Mari; Komiyama, Chiyo; Miyamoto, Masaaki; Kitamura, Akira

    2014-01-01

    The severe accident of Fukushima 1 Nuclear Power Plant due to the Tohoku Region Pacific Coast Earthquake in 11 March 2011 caused wide contamination and pollution by radionuclides in Fukushima and surrounding prefectures. In the current JPR symposium, a group of plant scientists attempted to examine the impact of the radioactive contamination on wild and cultivated plants. Measurements of gamma (γ) radiation from radionuclides in "Fukushima samples", which we called and collected from natural and agricultural areas in Fukushima prefecture were mostly done with a high-purity Ge detector in the Graduate School of Maritime Sciences, Kobe University. In this technical note, we describe the methods of sample preparation and measurements of radioactivity of the samples and discuss the reliability of our data in regards to the International Atomic Energy Agency (IAEA) Interlaboratory comparisons and proficiency test (IAEA proficiency test).

  10. Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

    NASA Astrophysics Data System (ADS)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Cabie, Martiane; Ronda, Antoine; Berbezier, Isabelle; Abbarchi, Marco

    2016-07-01

    We report on a novel method for the implementation of core-shell SiGe-based nanocrystals combining silicon on insulator dewetting in a molecular beam epitaxy reactor with an ex situ Ge condensation process. With an in situ two-step process (annealing and Ge deposition) we produce two families of islands on the same sample: Si-rich, formed during the first step and, all around them, Ge-rich formed after Ge deposition. By increasing the amount of Ge deposited on the annealed samples from 0 to 18 monolayers, the islands’ shape in the Si-rich zones can be tuned from elongated and flat to more symmetric and with a larger vertical aspect ratio. At the same time, the spatial extension of the Ge-rich zones is progressively increased as well as the Ge content in the islands. Further processing by ex situ rapid thermal oxidation results in the formation of a core-shell composition profile in both Si and Ge-rich zones with atomically sharp heterointerfaces. The Ge condensation induces a Ge enrichment of the islands’ shell of up to 50% while keeping a pure Si core in the Si-rich zones and a ˜25% SiGe alloy in the Ge-rich ones. The large lattice mismatch between core and shell, the absence of dislocations and the islands’ monocrystalline nature render this novel class of nanostructures a promising device platform for strain-based band-gap engineering. Finally, this method can be used for the implementation of ultralarge scale meta-surfaces with dielectric Mie resonators for light manipulation at the nanoscale.

  11. Bridgman Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Cobb, S. D.; Motakef, S.

    1997-01-01

    The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.

  12. The Majorana Demonstrator: A search for neutrinoless double-beta decay of germanium-76

    SciTech Connect

    Elliott, S. R.; Boswell, M.; Goett, J.; Rielage, K.; Ronquest, M. C.; Xu, W.; Abgrall, N.; Chan, Y-D.; Hegai, A.; Martin, R. D.; Mertens, S.; Poon, A. W. P.; Aguayo, E.; Fast, J. E.; Hoppe, E. W.; Kouzes, R. T.; LaFerriere, B. D.; Orrell, J. L.; Overman, N. R.; Soin, A.; and others

    2013-12-30

    The MAJORANA collaboration is searching for neutrinoless double beta decay using {sup 76}Ge, which has been shown to have a number of advantages in terms of sensitivities and backgrounds. The observation of neutrinoless double-beta decay would show that lepton number is violated and that neutrinos are Majorana particles and would simultaneously provide information on neutrino mass. Attaining sensitivities for neutrino masses in the inverted hierarchy region, 15 - 50 meV, will require large, tonne-scale detectors with extremely low backgrounds, at the level of ∼1 count/t-y or lower in the region of the signal. The MAJORANA collaboration, with funding support from DOE Office of Nuclear Physics and NSF Particle Astrophysics, is constructing the DEMONSTRATOR, an array consisting of 40 kg of p-type point-contact high-purity germanium (HPGe) detectors, of which ∼30 kg will be enriched to 87% in {sup 76}Ge. The DEMONSTRATOR is being constructed in a clean room laboratory facility at the 4850' level (4300 m.w.e.) of the Sanford Underground Research Facility (SURF) in Lead, SD. It utilizes a compact graded shield approach with the inner portion consisting of ultra-clean Cu that is being electroformed and machined underground. The primary aim of the DEMONSTRATOR is to show the feasibility of a future tonne-scale measurement in terms of backgrounds and scalability.

  13. High efficiency antireflection coating in MWIR region (3.6-4.9 μm) simultaneously effective for Germanium and Silicon optics

    NASA Astrophysics Data System (ADS)

    Bhatt, Meenakshi; Nautiyal, B. B.; Bandyopadhyay, P. K.

    2010-01-01

    Antireflection coatings have critical importance in thermal imaging system working in MWIR region (3-5 μm) since optics of high refractive index materials are used. Germanium (Ge) and Silicon (Si) optics are used extensively in the MWIR thermal systems. In this paper a study has been carried out on the design and fabrication of multi-substrate antireflection coating effective for Germanium and Silicon optics in MWIR (3.6-4.9 μm) region. The wave band 3.6-4.9 μm is chosen for the reported work because detector system used in MWIR region has a band selection filter effective in the same wavelength region and atmospheric transmission window in MWIR region is effective in 3-5 μm spectral band. Comprehensive search method was used to design the multilayer stack on the substrate. The coating materials used in the design were Germanium (Ge), Hafnium oxide (HfO 2) and Y-Ba-Fluoride (IR-F625). The fabrication of coating was made in a coating plant fitted with Cryo pump system and residual gas analyzer (RGA). The evaporation was carried out at high vacuum (2-6 × 10 -6 mbar) with the help of electron beam gun system and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 98.5% average transmission in 3.6-4.9 μm band for Germanium and Silicon optics. This work will be helpful in reducing the plant operation time, material and power consumption, as two different kinds of optics are simultaneously coated in a single coating cycle.

  14. Improved WIMP-search reach of the CDMS II germanium data

    SciTech Connect

    Agnese, R.; Anderson, A. J.; Asai, M.; Balakishiyeva, D.; Barker, D.; Basu Thakur, R.; Bauer, D. A.; Billard, J.; Borgland, A.; Bowles, M. A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Calkins, R.; Cerdeno, D. G.; Chagani, H.; Chen, Y.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hertel, S. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jardin, D. M.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kennedy, A.; Kiveni, M.; Koch, K.; Leder, A.; Loer, B.; Lopez Asamar, E.; Lukens, P.; Mahapatra, R.; Mandic, V.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Oser, S. M.; Page, K.; Page, W. A.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Rau, W.; Redl, P.; Reisetter, A.; Ricci, Y.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Schneck, K.; Schnee, R. W.; Scorza, S.; Serfass, B.; Shank, B.; Speller, D.; Toback, D.; Upadhyayula, S.; Villano, A. N.; Welliver, B.; Wilson, J. S.; Wright, D. H.; Yang, X.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2015-10-31

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10-44 and 1.18×10-41 at 90% confidence for 60 and 8.6 GeV/c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c2 WIMPs.

  15. Improved WIMP-search reach of the CDMS II germanium data

    DOE PAGESBeta

    Agnese, R.

    2015-10-12

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10–44 andmore » 1.18×10–41 at 90% confidence for 60 and 8.6 GeV/c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c2 WIMPs.« less

  16. Improved WIMP-search reach of the CDMS II germanium data

    SciTech Connect

    Agnese, R.

    2015-10-12

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10–44 and 1.18×10–41 at 90% confidence for 60 and 8.6 GeV/c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c2 WIMPs.

  17. Improved WIMP-search reach of the CDMS II germanium data

    NASA Astrophysics Data System (ADS)

    Agnese, R.; Anderson, A. J.; Asai, M.; Balakishiyeva, D.; Barker, D.; Basu Thakur, R.; Bauer, D. A.; Billard, J.; Borgland, A.; Bowles, M. A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Calkins, R.; Cerdeño, D. G.; Chagani, H.; Chen, Y.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, P.; Daal, M.; Di Stefano, P. C. F.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Godfrey, G. L.; Golwala, S. R.; Hall, J.; Harris, H. R.; Hertel, S. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jardin, D.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kennedy, A.; Kiveni, M.; Koch, K.; Leder, A.; Loer, B.; Lopez Asamar, E.; Lukens, P.; Mahapatra, R.; Mandic, V.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Oser, S. M.; Page, K.; Page, W. A.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Rau, W.; Redl, P.; Reisetter, A.; Ricci, Y.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Schneck, K.; Schnee, R. W.; Scorza, S.; Serfass, B.; Shank, B.; Speller, D.; Toback, D.; Upadhyayula, S.; Villano, A. N.; Welliver, B.; Wilson, J. S.; Wright, D. H.; Yang, X.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.; SuperCDMS Collaboration

    2015-10-01

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ˜5 keV , to increase sensitivity near a WIMP mass of 8 GeV /c2 . After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8 ×10-44 and 1.18 ×10-41 at 90% confidence for 60 and 8.6 GeV /c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6 ) GeV /c2 WIMPs.

  18. Measurement of K+ production cross section by 8 GeV protons using high energy neutrino interactions in the SciBooNE detector

    SciTech Connect

    Cheng, G.

    2011-07-28

    The SciBooNE Collaboration reports K+ production cross section and rate measurements using high energy daughter muon neutrino scattering data off the SciBar polystyrene (C8H8) target in the SciBooNE detector. The K+ mesons are produced by 8 GeV protons striking a beryllium target in Fermilab Booster Neutrino Beam line (BNB). Using observed neutrino and antineutrino events in SciBooNE, we measure d2σ/dpdΩ = (5.34 ±0.76) mb/(GeV/c x sr) for p + Be =K+ + X at mean K+ energy of 3.9 GeV and angle (with respect to the proton beam direction) of 3.7 degrees, corresponding to the selected K+ sample. Compared to Monte Carlo predictions using previous higher energy K+ production measurements, this measurement, which uses the NUANCE neutrino interaction generator, is consistent with a normalization factor of 0.85 ± 0.12. This agreement is evidence that the extrapolation of the higher energy K+ measurements to an 8 GeV beam energy using Feynman scaling is valid. This measurement reduces the error on the K+ production cross section from 40% to 14%.

  19. Measurement of K+ production cross section by 8 GeV protons using high-energy neutrino interactions in the SciBooNE detector

    NASA Astrophysics Data System (ADS)

    Cheng, G.; Mariani, C.; Alcaraz-Aunion, J. L.; Brice, S. J.; Bugel, L.; Catala-Perez, J.; Conrad, J. M.; Djurcic, Z.; Dore, U.; Finley, D. A.; Franke, A. J.; Giganti, C.; Gomez-Cadenas, J. J.; Guzowski, P.; Hanson, A.; Hayato, Y.; Hiraide, K.; Jover-Manas, G.; Karagiorgi, G.; Katori, T.; Kobayashi, Y. K.; Kobilarcik, T.; Kubo, H.; Kurimoto, Y.; Louis, W. C.; Loverre, P. F.; Ludovici, L.; Mahn, K. B. M.; Masuike, S.; Matsuoka, K.; McGary, V. T.; Metcalf, W.; Mills, G. B.; Mitsuka, G.; Miyachi, Y.; Mizugashira, S.; Moore, C. D.; Nakajima, Y.; Nakaya, T.; Napora, R.; Nienaber, P.; Orme, D.; Otani, M.; Russell, A. D.; Sanchez, F.; Shaevitz, M. H.; Shibata, T.-A.; Sorel, M.; Stefanski, R. J.; Takei, H.; Tanaka, H.-K.; Tanaka, M.; Tayloe, R.; Taylor, I. J.; Tesarek, R. J.; Uchida, Y.; van de Water, R.; Walding, J. J.; Wascko, M. O.; White, H. B.; Yokoyama, M.; Zeller, G. P.; Zimmerman, E. D.

    2011-07-01

    The SciBooNE Collaboration reports K+ production cross section and rate measurements using high-energy daughter muon neutrino scattering data off the SciBar polystyrene (C8H8) target in the SciBooNE detector. The K+ mesons are produced by 8 GeV protons striking a beryllium target in Fermilab Booster Neutrino Beam line (BNB). Using observed neutrino and antineutrino events in SciBooNE, we measure (d2σ)/(dpdΩ)=(5.34±0.76)mb/(GeV/c×sr) for p+Be→K++X at mean K+ energy of 3.9 GeV and angle (with respect to the proton beam direction) of 3.7 degrees, corresponding to the selected K+ sample. Compared to Monte Carlo predictions using previous higher energy K+ production measurements, this measurement, which uses the NUANCE neutrino interaction generator, is consistent with a normalization factor of 0.85±0.12. This agreement is evidence that the extrapolation of the higher energy K+ measurements to an 8 GeV beam energy using Feynman scaling is valid. This measurement reduces the error on the K+ production cross section from 40% to 14%.

  20. Measurement of K+ production cross section by 8 GeV protons using high energy neutrino interactions in the SciBooNE detector

    DOE PAGESBeta

    Cheng, G.

    2011-07-28

    The SciBooNE Collaboration reports K+ production cross section and rate measurements using high energy daughter muon neutrino scattering data off the SciBar polystyrene (C8H8) target in the SciBooNE detector. The K+ mesons are produced by 8 GeV protons striking a beryllium target in Fermilab Booster Neutrino Beam line (BNB). Using observed neutrino and antineutrino events in SciBooNE, we measure d2σ/dpdΩ = (5.34 ±0.76) mb/(GeV/c x sr) for p + Be =K+ + X at mean K+ energy of 3.9 GeV and angle (with respect to the proton beam direction) of 3.7 degrees, corresponding to the selected K+ sample. Compared tomore » Monte Carlo predictions using previous higher energy K+ production measurements, this measurement, which uses the NUANCE neutrino interaction generator, is consistent with a normalization factor of 0.85 ± 0.12. This agreement is evidence that the extrapolation of the higher energy K+ measurements to an 8 GeV beam energy using Feynman scaling is valid. This measurement reduces the error on the K+ production cross section from 40% to 14%.« less

  1. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    PubMed

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  2. Measurement of non-photonic electrons in p+p collisions at sNN = 200 GeV with reduced detector material in STAR

    SciTech Connect

    Jin,F.; Hallman,T.; et al.

    2009-05-13

    In this paper, we present our analysis of mid rapidity non-photonic electron (NPE) production at pT > 0.2 GeV/c in p+p collisions at √sNN = 200 GeV. The data set is ∼78 M TOF-triggered events taken from RHIC year 2008runs. Through the measurement of the e/π ratio, we find that the photonic background electrons from γ conversions are reduced by about a factor of 10 compared with those in STAR previous runs due to the absence of inner tracking detectors and the supporting materials. The dramatic increase of the signal-to-background ratio will allow us to improve the precision on extracting the charm cross section via its semi-leptonic decays to electrons.

  3. Search for GeV gamma-ray bursts with the ARGO-YBJ detector: summary of eight years of observations

    SciTech Connect

    Bartoli, B.; Catalanotti, S.; Piazzoli, B. D'Ettorre; Di Girolamo, T.; Bernardini, P.; D'Amone, A.; De Mitri, I.; Bi, X. J.; Cao, Z.; Chen, S. Z.; Branchini, P.; Budano, A.; Camarri, P.; Cardarelli, R.; Sciascio, G. Di; Chen, T. L.; Danzengluobu; Creti, P.; Cui, S. W.; Dai, B. Z. E-mail: Piero.Vallania@to.infn.it; Collaboration: ARGO-YBJ Collaboration; and others

    2014-10-10

    The search for gamma-ray burst (GRB) emission in the energy range of 1-100 GeV in coincidence with the satellite detection has been carried out using the Astrophysical Radiation with Ground-based Observatory at YangBaJing (ARGO-YBJ) experiment. The high-altitude location (4300 m a.s.l.), the large active surface (∼6700 m{sup 2} of Resistive Plate Chambers), the wide field of view (∼2 sr, limited only by the atmospheric absorption), and the high duty cycle (>86%) make the ARGO-YBJ experiment particularly suitable to detect short and unexpected events like GRBs. With the scaler mode technique, i.e., counting all the particles hitting the detector with no measurement of the primary energy and arrival direction, the minimum threshold of ∼1 GeV can be reached, overlapping the direct measurements carried out by satellites. During the experiment lifetime from 2004 December 17 to 2013 February 7, a total of 206 GRBs occurring within the ARGO-YBJ field of view (zenith angle θ ≤ 45°) have been analyzed. This is the largest sample of GRBs investigated with a ground-based detector. Two light curve models have been assumed and since in both cases no significant excess has been found, the corresponding fluence upper limits in the 1-100 GeV energy region have been derived, with values as low as 10{sup –5} erg cm{sup –2}. The analysis of a subset of 24 GRBs with known redshift has been used to constrain the fluence extrapolation to the GeV region together with possible cutoffs under different assumptions on the spectrum.

  4. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  5. Silicon-germanium technology program of the Jet Propulsion Laboratory.

    NASA Technical Reports Server (NTRS)

    De Winter, F.; Stapfer, G.

    1972-01-01

    The outer planetary exploration missions studied by the Jet Propulsion Laboratory require silicon-germanium radioisotope thermoelectric generators (RTGs) in which the factors of safety are as low as is compatible with the reliable satisfaction of the power needs. Work on silicon germanium sublimation performed at the Jet Propulsion Laboratory is presented. Analytical modeling work on the solid-diffusion process involved in the steady-state (free) sublimation of silicon germanium is described. Analytical predictions are made of the sublimation suppression which can be achieved by using a cover gas. A series of accelerated (high-temperature) tests which were performed on simulated hardware (using four SiGe couples) to study long-term sublimation and reaction mechanisms are also discussed.

  6. Germanium FCC structure from a colloidal crystal template

    SciTech Connect

    Miguez, H.; Meseguer, F.; Lopez, C.; Holgado, M.; Andreasen, G.; Mifsud, A.; Fornes, V.

    2000-05-16

    Here, the authors show a method to fabricate a macroporous structure in which the pores, essentially identical, arrange regularly in a face-centered cubic (FCC) lattice. The result is a network of air spheres in a germanium medium. This structure presents the highest dielectric contrast ({epsilon}{sub Ge}/{epsilon}{sub air} = 16) ever achieved in the optical regime in such periodic structures, which could result in important applications in photonics. The authors employ solid silica colloidal crystals (opals) as templates within which a cyclic germanium growth process is carried out. Thus, the three-dimensional periodicity of the host is inherited by the guest. Afterward, the silica is removed and a germanium opal replica is obtained.

  7. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

    SciTech Connect

    Filatov, D. O.; Gorshkov, A. P.; Volkova, N. S.; Guseinov, D. V.; Alyabina, N. A.; Ivanova, M. M.; Chalkov, V. Yu.; Denisov, S. A.; Shengurov, V. G.

    2015-03-15

    We investigate the photosensitivity spectra of photodiodes based on Si p-i-n structures with single-layered and multilayer self-assembled GeSi/Si(001) nanoisland arrays in the i region, which are grown using a technique combining Si molecular-beam epitaxy and Ge vapor-phase epitaxy, in dependence on the temperature, diode bias, and GeSi nanoisland parameters. We show that the temperature and field dependences of the diode photosensitivity in the spectral range of the interband optical absorption in GeSi nanoislands are determined by the ratio between the rate of emission of photoexcited holes from the nanoislands and the rate of the recombination of excess carriers in them. We demonstrate the possibility of determination of the hole recombination lifetime in GeSi nanoislands from the temperature and field dependences of the photosensitivity.

  8. Nanoindentation-induced phase transformation and structural deformation of monocrystalline germanium: a molecular dynamics simulation investigation

    PubMed Central

    2013-01-01

    Molecular dynamics simulations were conducted to study the nanoindentation of monocrystalline germanium. The path of phase transformation and distribution of transformed region on different crystallographic orientations were investigated. The results indicate the anisotropic behavior of monocrystalline germanium. The nanoindentation-induced phase transformation from diamond cubic structure to β-tin-Ge was found in the subsurface region beneath the tool when indented on the (010) plane, while direct amorphization was observed in the region right under the indenter when the germanium was loaded along the [101] and [111] directions. The transformed phases extend along the < 110 > slip direction of germanium. The depth and shape of the deformed layers after unloading are quite different according to the crystal orientation of the indentation plane. The study results suggest that phase transformation is the dominant mechanism of deformation of monocrystalline germanium film in nanoindentation. PMID:23947487

  9. Metrological Determination of Natural Radioactive Isotopes {sup 226}Ra, {sup 228}Ra and {sup 210}Pb by Means of Ge Detector

    SciTech Connect

    Almeida, Maria Candida M. de; Delgado, Jose U.; Poledna, Roberto; Oliveira, Estela Maria de; Silva, Ronaldo L. da

    2008-08-07

    A metrological method to determine the activity per mass unity (activity concentration) of {sup 226}Ra and {sup 210}Pb ({sup 238}U decay series) and {sup 228}Ra ({sup 232}Th series) by gamma-ray spectrometers based on hyper-pure coaxial germanium detector was developed. In the soil the {sup 22}Ra (half-life = 1600 years) exhibits the same level of radioactivity as {sup 238}U (half-life 4.5x10{sup 9} years) because of a natural phenomenon called secular equilibrium. {sup 226}Ra decays into {sup 222}Rn (half-life = 3.8 days), a radioactive inert gas. After several days, the {sup 222}Rn naturally decays to {sup 218}Po (half-life = 3 minutes), where finally {sup 210}Pb (half-life = 22 years) is produced. The metrological capability of high-resolution gamma-ray spectrometry for naturally occurring radionuclides at environmental levels is showed, with emphasis on the use of 2 mL standard sources volume in a glass ampoule. Source preparation and calibration procedures are described. Radionuclide standards in an activity range of 10 to 250 Bq/g were produced which can be applied in a variety of environmental sample analysis (water, plant material, sediment, etc.). Uncertainties for {sup 226}Ra and {sup 210}Pb around 3% (k = 1) were obtained.

  10. Surface events identification in the EDELWEISS germanium bolometers

    SciTech Connect

    Navick, X.-F.

    2007-03-28

    In the first phase of the EDELWEISS-II Dark Matter search, 23 germanium detectors with NTD thermal sensors and 7 detectors with NbSi thin films are going to be used at 20mK for the direct detection of WIMPs. In this paper, we are describing the different techniques of identification of surface events that might improve strongly the physics results of this experiment.

  11. Germanium-silicon solid solutions

    NASA Technical Reports Server (NTRS)

    Zemskov, V. S.; Kubasov, V. N.; Belokurova, I. N.; Titkov, A. N.; Shulpina, I. L.; Safarov, V. I.; Guseva, N. B.

    1977-01-01

    An experiment on melting and directional crystallization of an antimony (Sb) doped germanium silicon (GeSi) solid solution was designed for the Apollo-Soyuz Test Project (ASTP) to study the possibility of using zero-g conditions for obtaining solid-solution monocrystals with uniformly distributed components. Crystallization in the zero-g environment did not occur under ideal stationary growth and segregation conditions. Crystallization under zero-g conditions revealed the heterogeneous nature of Si and Sb distribution in the cross sections of crystals. The presence of the radial thermal gradient in the multipurpose furnace could be one of the reasons for such Si and Sb distribution. The structure of space-grown crystals correlates with the nature of heterogeneities of Si and Sb distribution in crystals. The type of surface morphology and the contour observed in space-grown crystals were never observed in ground-based crystals and indicate the absence of wetting of the graphitized walls of the ampoule by the melt during melting and crystallization.

  12. SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

    SciTech Connect

    Reedy, R. C.; Mason, A. R.; Nelson, B. P.; Xu, Y.

    1998-10-16

    In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.

  13. Production of pristine, sulfur-coated and silicon-alloyed germanium nanoparticles via laser pyrolysis

    NASA Astrophysics Data System (ADS)

    Kim, Seongbeom; Park, Song Yi; Jeong, Jaeki; Kim, Gi-Hwan; Rohani, Parham; Kim, Dong Suk; Swihart, Mark T.; Kim, Jin Young

    2015-07-01

    Here we demonstrate production of three types of germanium containing nanoparticles (NPs) by laser pyrolysis of GeH4 and characterize their sizes, structures and composition. Pristine Ge NPs were fabricated with 50 standard cubic centimeter per minute (sccm) of GeH4 and 25 sccm of SF6 as a photosensitizer gas, while sulfur-coated Ge NPs were produced with 25 sccm of GeH4 and 50 sccm of SF6. The laser pyrolysis of SiH4/GeH4 mixtures produced Si1-xGex alloy NPs. Effects of key process parameters including laser intensity and gas flow rates on NP properties have been investigated. The ability of the laser pyrolysis technique to flexibly produce a variety of germanium-containing NPs, as illustrated in this study shows promise for commercial-scale production of new nanomaterials as high purity dry powders.

  14. Single-molecule conductance in atomically precise germanium wires.

    PubMed

    Su, Timothy A; Li, Haixing; Zhang, Vivian; Neupane, Madhav; Batra, Arunabh; Klausen, Rebekka S; Kumar, Bharat; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

    2015-09-30

    While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather than extended solids. Here we unveil a new approach for synthesizing atomically discrete wires of germanium and present the first conductance measurements of molecular germanium using a scanning tunneling microscope-based break-junction (STM-BJ) technique. Our findings show that germanium and silicon wires are nearly identical in conductivity at the molecular scale, and that both are much more conductive than aliphatic carbon. We demonstrate that the strong donor ability of C-Ge σ-bonds can be used to raise the energy of the anchor lone pair and increase conductance. Furthermore, the oligogermane wires behave as conductance switches that function through stereoelectronic logic. These devices can be trained to operate with a higher switching factor by repeatedly compressing and elongating the molecular junction.

  15. Single-molecule conductance in atomically precise germanium wires.

    PubMed

    Su, Timothy A; Li, Haixing; Zhang, Vivian; Neupane, Madhav; Batra, Arunabh; Klausen, Rebekka S; Kumar, Bharat; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

    2015-09-30

    While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather than extended solids. Here we unveil a new approach for synthesizing atomically discrete wires of germanium and present the first conductance measurements of molecular germanium using a scanning tunneling microscope-based break-junction (STM-BJ) technique. Our findings show that germanium and silicon wires are nearly identical in conductivity at the molecular scale, and that both are much more conductive than aliphatic carbon. We demonstrate that the strong donor ability of C-Ge σ-bonds can be used to raise the energy of the anchor lone pair and increase conductance. Furthermore, the oligogermane wires behave as conductance switches that function through stereoelectronic logic. These devices can be trained to operate with a higher switching factor by repeatedly compressing and elongating the molecular junction. PMID:26373928

  16. Imaging germanium telescope array for gamma-rays (IGETAGRAY)

    SciTech Connect

    Hailey, C.J.; Ziock, K.P. ); Harrison, F.A. Space Sciences Laboratory, University of California, Berkeley, CA ); Fleischmann, J. )

    1990-08-10

    The Germanium Drift Chamber (GDC) is a gamma-ray detector with excellent energy and one-dimensional spatial resolution. Due to recent developments in coded aperture optics, it is feasible to couple one-dimensional coded apertures and GDCs in a special array geometry producing a telescope with true two-dimensional imaging. This Imaging Germanium Telescope Array for Gamma-rays (IGETAGRAY) has made a comparable field of view and sensitivity to true two-dimensional systems, but simplified engineering requirements. IGETAGRAY will make possible high sensitivity spectroscopy of the gamma-ray sky.

  17. Imaging Germanium Telescope Array for Gamma-Rays (IGETAGRAY)

    SciTech Connect

    Hailey, C.J.; Ziock, K.P. ); Harrison, F.A. . Dept. of Physics California Univ., Berkeley, CA . Space Sciences Lab.); Fleischmann, J. )

    1990-01-01

    The Germanium Drift Chamber (GDC) is a gamma-ray detector with excellent energy and one-dimensional spatial resolution. Due to recent developments in coded aperture optics, it is feasible to couple one-dimensional coded apertures and GDCs in a special array geometry producing a telescope with true two-dimensional imaging. This Imaging Germanium Telescope Array for Gamma-Rays (IGETAGRAY) has made a comparable field of view and sensitivity to true two-dimensional systems, but simplified engineering requirements. IGETAGRAY will make possible high sensitivity spectroscopy of the gamma-ray sky. 5 refs., 1 fig.

  18. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

  19. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    NASA Technical Reports Server (NTRS)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  20. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  1. Synthesis and the crystal and molecular structure of the silver(I)-germanium(IV) polymeric complex with citrate anions {[Ag2Ge(H Cit)2(H2O)2] • 2H2O} n

    NASA Astrophysics Data System (ADS)

    Sergienko, V. S.; Martsinko, E. E.; Seifullina, I. I.; Churakov, A. V.; Chebanenko, E. A.

    2016-03-01

    The synthesis and X-ray diffraction study of compound {[Ag2Ge(H Cit)2(H2O)2] • 2H2O} n , where H4 Cit is the citric acid, are performed. In the polymeric structure, the H Cit 3- ligand fulfils the tetradentate chelate-μ4-bridging (3Ag, Ge) function (tridentate with respect to Ge and Ag atoms). The Ge atom is octahedrally coordinated by six O atoms of two H Cit 3-ligands. The coordination polyhedron of the Ag atom is an irregular five-vertex polyhedron [four O atoms of four H Cit 3- ligands and the O(H2O) atom]. An extended system of O-H···O hydrogen bonds connects complex molecules into a supramolecular 3D-framework.

  2. Experimental limits on extra-Z bosons from e+e- annihilation data with the VENUS detector at sqrt(s)=50-64 GeV

    NASA Astrophysics Data System (ADS)

    Abe, K.; Amako, K.; Arai, Y.; Asano, Y.; Chiba, M.; Chiba, Y.; Daigo, M.; Emura, T.; Endo, I.; Fukawa, M.; Fukui, T.; Fukushima, Y.; Haba, J.; Hayashibara, I.; Hemmi, Y.; Higuchi, M.; Hirose, T.; Hojyo, Y.; Homma, Y.; Hoshi, Y.; Ikegami, Y.; Ishihara, N.; Kamitani, T.; Kanematsu, N.; Kanzaki, J.; Kikuchi, R.; Kondo, T.; Koseki, T.; Kubo, K.; Kurashige, H.; Matsui, T.; Minami, M.; Miyake, K.; Mori, S.; Nagashima, Y.; Nakamura, T.; Nakano, I.; Narita, Y.; Odaka, S.; Ogawa, K.; Ohama, T.; Ohsugi, T.; Okamoto, A.; Ono, A.; Osabe, H.; Oyama, T.; Saito, H.; Sakae, H.; Sakamoto, H.; Sakamoto, S.; Sakano, M.; Sakuda, M.; Sasao, N.; Sato, M.; Shioden, M.; Shirai, J.; Shirakata, M.; Suekane, F.; Sugimoto, S.; Sumiyoshi, T.; Suzuki, A.; Suzuki, Y.; Takada, Y.; Takasaki, F.; Taketani, A.; Takita, M.; Tamura, N.; Tanaka, R.; Terunuma, N.; Tobimatsu, K.; Tsuboyama, T.; Tsukamoto, A.; Uehara, S.; Unno, Y.; Utsumi, M.; Wakai, M.; Watanabe, T.; Watase, Y.; Yabuki, F.; Yamada, Y.; Yamagata, T.; Yamashita, T.; Yonezawa, Y.; Yoshida, H.

    1990-08-01

    We have tested extra Z models in the reactions e+e--->μ+μ-, τ+τ- and hadrons in the energy range 50GeV using the VENUS detector at the TRISTAN e+e- storage ring. Our data are in good agreement with the standard model prediction (χ2/NDf=2.9/31)). We have obtained 90% confidence-level lower limits of 105, 125 and 231 GeV for the masses of ZΨ, Zη and Zχ bosons which are expected from the E6 grand unified theory. We also place a 90% confidence-level lower limit of 426 GeV for the mass of an extra-Z boson whose couplings to quarks and leptons are assumed to be the same as those for the standard Z boson. Our results exceed the previous experimental limits from the pp collider experiments, although there have been some combined analyses reporting the limits better than those obtained in the present analysis.

  3. Tunable split-ring resonators using germanium telluride

    NASA Astrophysics Data System (ADS)

    Kodama, C. H.; Coutu, R. A.

    2016-06-01

    We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.

  4. Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel.

    PubMed

    Lambert, P. M.

    1998-03-23

    The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation. The precursor gel is shown by FT-IR to be a diphasic mixture of hydrous hafnia and an ammonium germanate gel. Thermal treatment drives the crystallization of a hafnium-rich, simple tetragonal Hf(1)(-)(x)()Ge(x)()O(2) structure at 893 degrees C, that upon further heating to 1200 degrees C yields scheelite HfGeO(4).

  5. Nanorods of Silicon and Germanium with Well-Defined Shapes and Sizes

    SciTech Connect

    Slavi C. Sevov

    2012-05-03

    We have made number of important discoveries along the major goals of the project, namely i) electrodeposition of germanium thin films from clusters, ii) synthesis of cluster-based surfactants with long hydrocarbon chains and micelles made of them, iii) grafting of Ge{sub 9}-clusters onto self assembled films of siloxanes attached to glass substrates, iv) doping of Ge{sub 9}-clusters, and v) expanding the clusters to ten-atom cages of Ge{sub 10}{sup 2-}.

  6. Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography

    SciTech Connect

    Shimizu, Y.; Takamizawa, H.; Toyama, T.; Inoue, K.; Nagai, Y.; Kawamura, Y.; Uematsu, M.; Itoh, K. M.; Haller, E. E.

    2013-01-14

    We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched {sup 70}Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes ({sup 70}Ge, {sup 72}Ge, {sup 73}Ge, {sup 74}Ge, and {sup 76}Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 {+-} 0.1 nm which was much sharper than that obtained by SIMS.

  7. Epidemiological survey of workers exposed to inorganic germanium compounds

    PubMed Central

    Swennen, B; Mallants, A; Roels, H; Buchet, J; Bernard, A; Lauwerys, R; Lison, D

    2000-01-01

    OBJECTIVES—To assess occupational exposure to inorganic germanium (Ge) in workers from a producing plant, and to assess the health of these workers, with a special focus on respiratory, kidney, and liver functions.
METHODS—Cross sectional study of 75 workers exposed to Ge and 79 matched referents. Exposure was characterised by measuring air and urine concentrations of the element during a typical working week, and health was assessed by a questionnaire, clinical examination, lung function testing, chest radiography, and clinical chemistry in serum and urine, including high and low molecular weight urinary proteins.
RESULTS—Airborne concentrations of Ge (inhalable fraction) ranged from 0.03 to 300 µg/m, which was reflected by increased urinary excretion of Ge (0.12-200 µg/g creatinine, after the shift at the end of the working week). Lung, liver, and haematological variables were not significantly different between referents and workers exposed to Ge. A slightly higher urinary concentration of high molecular weight proteins (albumin and transferrin) was found in workers exposed to Ge, possibly reflecting subclinical glomerular changes. No relation was found between the intensity or duration of exposure and the urinary concentration of albumin. No difference between referents and workers exposed to Ge was found for other renal variables.
CONCLUSIONS—Measurement of urinary Ge can detect occupational exposure to inorganic Ge and its compounds. It is prudent to recommend the monitoring of renal variables in workers exposed to Ge.


Keywords: inorganic germanium; occupational exposure; biological monitoring PMID:10810110

  8. Space Detectors for Gamma Rays (100 MeV-100 GeV): from Egret to Fermi LAT

    NASA Technical Reports Server (NTRS)

    Thompson, David J.

    2015-01-01

    The design of spaceborne high-energy (E is greater than 100 MeV) gamma-ray detectors depends on two principal factors: (1) the basic physics of detecting and measuring the properties of the gamma rays; and (2) the constraints of operating such a detector in space for an extended period. Improvements in technology have enabled major advances in detector performance, as illustrated by two successful instruments, EGRET on the Compton Gamma Ray Observatory and LAT on the Fermi Gamma-ray Space Telescope.

  9. Optical properties of colloidal germanium nanocrystals

    SciTech Connect

    WILCOXON,JESS P.; PROVENCIO,PAULA P.; SAMARA,GEORGE A.

    2000-05-01

    Highly crystalline germanium (Ge) nanocrystals in the size range 2--10 nm were grown in inverse micelles and purified and size-separated by high pressure liquid chromatography with on-line optical and electrical diagnostics. The nanocrystals retain the diamond structure of bulk Ge down to at least 2.0 nm (containing about 150 Ge atoms). The background- and impurity-free extinction and photoluminescence (PL) spectra of these nanocrystals revealed rich structure which was interpreted in terms of the bandstructure of Ge shifted to higher energies by quantum confinement. The shifts ranged from {minus}0.1 eV to over 1 eV for the various transitions. PL in the range 350--700 nm was observed from nanocrystals 2--5 nm in size. The 2.0 nm nanocrystals yielded the most intense PL (at 420 nm) which is believed to be intrinsic and attributed to direct recombination at {Gamma}. Excitation at high energy (250 nm) populates most of the conduction bands resulting in competing recombination channels and the observed broad PL spectra.

  10. Reduction of Defects in Germanium-Silicon

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a

  11. Syntheses and spectroscopy of germanium and tin compounds with biorelevant ligands

    NASA Astrophysics Data System (ADS)

    Breitinger, D. K.; Grützner, T.; Wick, H.; Schimmer, O.; Eschelbach, H.

    1997-06-01

    The germanium and tin compounds diaquabis(glycolato)germanium(IV) Ge(OCH 2COO) 2(H 2O) 2 ( 1), bis(thioglycolato)-, bis(thiolactato)-, and bis(thiohydracrylato)-germanium(IV) Ge(SJCOO) 2 (J = CH 2 ( 2), CH(CH 3) ( 3), CH 2CH 2 ( 4)), as well as the tetrakis(alkylthioglycolato)tetrels Tt(SCH 2COOR) 4 (Tt = Ge ( 5, 6) and Sn ( 7, 8); R = Me, i-Pr, respectively), under study for their antimutagenic properties, were studied by vibrational spectrometry. Some of the skeletal vibrations of the octahedral 1 and otherwise tetrahedral compounds were assigned. Data from 1H- and 13C- NMR spectra and from mass spectra are also reported.

  12. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  13. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    SciTech Connect

    Wang, X.; Tsybeskov, L.; Kamins, T. I.; Wu, X.; Lockwood, D. J.

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  14. Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

    PubMed

    Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

    2010-06-15

    The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metalGeO(2)Ge capacitors fabricated by thermal oxidation has been investigated. In the metalGeO(2)Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metalGeO(2)Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO(2)Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface.

  15. Preparation of freestanding germanium nanocrystals by ultrasonic aerosol pyrolysis

    NASA Astrophysics Data System (ADS)

    Stoldt, Conrad R.; Haag, Michael A.; Larsen, Brian A.

    2008-07-01

    This letter reports a synthetic route adaptable for the continuous, large-scale production of germanium (Ge) nanocrystals for emerging electronic and optoelectronic applications. Using an ultrasonic aerosol pyrolysis approach, diamond cubic Ge nanocrystals with dense, spherical morphologies and sizes ranging from 3to14nm are synthesized at 700°C from an ultrasonically generated aerosol of tetrapropylgermane (TPG) precursor and toluene solvent. The ultimate crystal size demonstrates a near linear relationship within the range of TPG concentrations investigated, while the shape of the measured size distributions predicts multiple particle formation mechanisms during aerosol decomposition and condensation.

  16. Germanium as a Material to Enable Silicon Photonics

    NASA Astrophysics Data System (ADS)

    Ichikawa, R.; Takita, S.; Ishikawa, Y.; Wada, K.

    Germanium has been an enabler of the information age. Ge on Si nucleates Si photonics as well as high-speed CMOS electronics. Recently, Ge has played a significant role in integrating materials such as III-Vs on Si. The structure of GaAs on a thick Ge layer on Si has been studied for many years to expand its device application menu such as lasers, high-performance transistors, and tandem solar cells on Si. However, an ultra-thin Ge buffer layer (referred to as (Ge) hereafter) technology described in this chapter has created new fields for applications. One of the emerging fields is the structure and properties of AlGaAs/GaAs/(Ge)/Si/Ge, which has been impossible to create previously using the thick Ge buffer on Si technology. Here, we demonstrate an application as a new green power generation platform, i.e., high-efficiency cost-effective tandem solar cells using Si as a cell as well as the mechanical substrate. The (Ge) thickness has not been fully optimized yet, but is in the range 10-20 nm. Our design for a tandem solar cell shows that its theoretical efficiency reaches 43%. The key attributes are the crystalline quality and surface roughness of ultrathin (Ge). We have experimentally optimized the (Ge) buffer thickness to achieve both requirements and prototyped Ge solar cells on Si. The Ge solar cells have successfully reproduced their ideal external quantum efficiency. This is the proof of concept of the success of the Ge challenge as the material enabler to integrate Si and GaAs.

  17. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    NASA Astrophysics Data System (ADS)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  18. Reductant-free colloidal synthesis of near-IR emitting germanium nanocrystals: role of primary amine.

    PubMed

    Ghosh, Batu; Ogawara, Makoto; Sakka, Yoshio; Shirahata, Naoto

    2014-03-01

    High temperature colloidal synthesis without using hazardous reducing agent is demonstrated here to develop a straight forward pathway for synthesizing near-IR (NIR) light emitting germanium nanocrystals (Ge NCs). The NCs were prepared by heating a mixture of germanium (II) iodide and organoamine. This article presents an important role of the primary amine which serves as a reducing agent as well as an inhibitor against oxidation by comparing with the tertiary amine. Interestingly, the difference in chemical reactivity between each amine causes the difference in major structural phase of the products. An efficient route to produce NIR light emitting Ge NCs is demonstrated.

  19. Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals.

    PubMed

    Wang, Wenzhong; Wang, Keda; Han, Daxing; Poudel, Bed; Wang, Xiaowei; Wang, D Z; Zeng, Baoqing; Ren, Z F

    2007-02-21

    We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 µm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (I(PL)) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the I(PL) is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO(2) layer and the bulk crystal Ge is responsible for the near-infrared PL.

  20. Etching of germanium-tin using ammonia peroxide mixture

    SciTech Connect

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia; Zhang, Zheng; Pan, Jisheng; Tok, Eng-Soon

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  1. Superconducting nanowire single photon detectors fabricated from an amorphous Mo{sub 0.75}Ge{sub 0.25} thin film

    SciTech Connect

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W.

    2014-07-14

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo{sub 0.75}Ge{sub 0.25} thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  2. Germanium: An aqueous processing review

    SciTech Connect

    Lier, R.J.M. van; Dreisinger, D.B.

    1995-08-01

    In industrial aqueous solutions, germanium generally occurs in trace amounts amid high concentrations of other metals, such as zinc, copper and iron. Separation of germanium from these metals as well as its isolation from gallium and indium pose a real challenge to the hydrometallurgist. After a brief discussion of the aqueous chemistry of germanium, this paper reviews the flowsheet of the Apex Mine in Utah. The Apex property was the only mine in the world to be operated primarily for production of gallium and germanium, but apparently closed due to great operating difficulties. Several process variants proposed for the treatment of the Apex ore, including bioleaching methods, are addressed. Following a more general description of the behavior of germanium in hydrometallurgical zinc processing streams, available technology for its recovery from aqueous solutions is summarized. Precipitation, solvent extraction, ion exchange, electrowinning, ion flotation and liquid-membrane separation are all outlined in terms of the aqueous chemistry of germanium. Finally, the production of high purity germanium dioxide and metal is briefly discussed. 61 refs.

  3. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

  4. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  5. A pseudo-single-crystalline germanium film for flexible electronics

    SciTech Connect

    Higashi, H.; Yamada, S.; Kanashima, T.; Hamaya, K.; Kasahara, K.; Park, J.-H.; Miyao, M.; Kudo, K.; Okamoto, H.; Moto, K.; Tsunoda, I.

    2015-01-26

    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

  6. FTIR and DFT studies of Novel Germanium-Carbon Clusters

    NASA Astrophysics Data System (ADS)

    Robbins, D. L.; Rittby, C. M. L.; Graham, W. R. M.

    2001-10-01

    The vibrational fundamentals and structures of germanium-carbon clusters formed by laser ablation and trapped in solid Ar are currently under investigation. The determination of the ground state geometries and vibrational fundamentals are facilitated by the comparison of frequencies and ^13C isotopic shifts measured by Fourier transform infrared spectroscopy with the predictions of density functional theory. The identification of the ν3 mode of linear GeC_3Ge (observed at 1920.7 cm-1 ) has been made.(D.L.Robbins, C.M.L. Rittby, and W.R.M. Graham J. Chem. Phys. 114, 3570 (2001).) The results of further calculations and assignments on larger species such as GeC4 and GeC9 will be reported.

  7. Germanium-Vacancy Single Color Centers in Diamond.

    PubMed

    Iwasaki, Takayuki; Ishibashi, Fumitaka; Miyamoto, Yoshiyuki; Doi, Yuki; Kobayashi, Satoshi; Miyazaki, Takehide; Tahara, Kosuke; Jahnke, Kay D; Rogers, Lachlan J; Naydenov, Boris; Jelezko, Fedor; Yamasaki, Satoshi; Nagamachi, Shinji; Inubushi, Toshiro; Mizuochi, Norikazu; Hatano, Mutsuko

    2015-01-01

    Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center. PMID:26250337

  8. Slow Crack Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Salem, Jon

    2016-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A=1.7), it is not as anisotropic as SiC, NiAl, or Cu, as evidence by consistent fracture toughness on the 100, 110, and 111 planes. Germanium does not exhibit significant slow crack growth in distilled water. (n=100). Practical values for engineering design are a fracture toughness of 0.7 MPam and a Weibull modulus of m=6+/-2. For well ground and reasonable handled coupons, fracture strength should be greater than 30 MPa.

  9. Epitaxial growth of nanostructured gold films on germanium via galvanic displacement.

    PubMed

    Sayed, Sayed Y; Buriak, Jillian M

    2010-12-01

    This work focuses on the synthesis and characterization of gold films grown via galvanic displacement on Ge(111) substrates. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous, room temperature conditions. Investigations involving X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques were performed to study the crystallinity and orientation of the resulting gold-on-germanium films. A profound effect of HF(aq) concentration was noted, and although the SEM images did not show significant differences in the resulting gold films, a host of X-ray diffraction studies demonstrated that higher concentrations of HF(aq) led to epitaxial gold-on-germanium, whereas in the absence of HF(aq), lower degrees of order (fiber texture) resulted. Cross-sectional nanobeam diffraction analyses of the Au-Ge interface confirmed the epitaxial nature of the gold-on-germanium film. This epitaxial behavior can be attributed to the simultaneous etching of the germanium oxides, formed during the galvanic displacement process, in the presence of HF. High-resolution TEM analyses showed the coincident site lattice (CSL) interface of gold-on-germanium, which results in a small 3.8% lattice mismatch due to the coincidence of four gold lattices with three of germanium.

  10. Strained-germanium nanostructures for infrared photonics.

    PubMed

    Boztug, Cicek; Sánchez-Pérez, José R; Cavallo, Francesca; Lagally, Max G; Paiella, Roberto

    2014-04-22

    The controlled application of strain in crystalline semiconductors can be used to modify their basic physical properties to enhance performance in electronic and photonic device applications. In germanium, tensile strain can even be used to change the nature of the fundamental energy band gap from indirect to direct, thereby dramatically increasing the interband radiative efficiency and allowing population inversion and optical gain. For biaxial tension, the required strain levels (around 2%) are physically accessible but necessitate the use of very thin crystals. A particularly promising materials platform in this respect is provided by Ge nanomembranes, that is, single-crystal sheets with nanoscale thicknesses that are either completely released from or partially suspended over their native substrates. Using this approach, Ge tensilely strained beyond the expected threshold for direct-band gap behavior has recently been demonstrated, together with strong strain-enhanced photoluminescence and evidence of population inversion. We review the basic properties, state of the art, and prospects of tensilely strained Ge for infrared photonic applications.

  11. Simulation and verification of the cosmogenic background at the shallow depth GIOVE detector

    NASA Astrophysics Data System (ADS)

    Hakenmüller, J.; Maneschg, W.; Heusser, G.

    2016-05-01

    The GIOVE (Germanium Inner Outer VEto) detector setup is a low level Germanium spectrometer for material screening with elaborated shield located at the shallow depth underground laboratory of the Max-Planck-Institut für Kernphysik in Heidelberg. It is equipped with a double active muon veto with a total muon rejection efficiency of ~99% and there are also passive layers to moderate and capture neutrons. With this setup an integral count rate is achieved comparable to detectors far deeper underground. The detector and shield geometry has been implemented into a Monte Carlo simulation, using the simulation framework MaGe based on Geant4. The Monte Carlo simulation is employed to determine sample efficiencies for γ ray screening measurements as well as to reproduce the remaining detector background from cosmic ray muon-induced secondaries. In terms of the background modeling of the unvetoed γ ray spectrum an excellent agreement better than 10% in the integral count rate in (40, 2700) keV as well as for the 511 keV line has been found. However, concerning the expected number of neutrons at the diode, the simulation outcome lays 40-80% below the measurement results. Being able to reproduce the detector background in the simulation, the simulation can be used to further optimize the shield design.

  12. Simultaneous determination of tin, germanium and molybdenum by diode array detection-flow injection analysis with partial least squares calibration model.

    PubMed

    Zou, Xiaoli; Li, Yuanqian; Li, Menglong; Zheng, Bo; Yang, Jingguo

    2004-03-10

    Simultaneous determination of tin, germanium and molybdenum in food samples has been established by flow injection-charge coupled detector (CCD) diode array detection spectrophotometry with partial least squares (PLS) algorithm. The method was based on the chromogenic reaction of metal ions and salicylflurone in the presence of cetyltrimethyl ammonium bromide. The overlapping spectra of these complexes are collected by CCD diode array detector and the multi-wavelength absorbance data are processed using partial least squares algorithm. The reaction conditions and analytical parameters of flow injection analysis have been investigated. The method was applied to directly determine Ge, Mo and Sn in several food samples after digestion with satisfactory results. The recoveries of spiked samples were 80.0-102.0% for tin, 86.3-92.0% for germanium and 83.2-95.2% for molybdenum, and the relative standard deviations for samples were 4.4-7.8%. Molybdenum in certified reference material of cattle liver was determined by the proposed method (n=8). The differential values between determined and guarantee values were within the given uncertain value ranges (t=1.687, P>0.05 for t-test). The samples of mung bean, kelp and pork liver were analyzed by the proposed method and inductively couple plasma-atomic emission spectroscopy (ICP-AES) method. The determination results of the two methods are in good agreement. The sampling rate is 30 samplesh(-1). PMID:18969354

  13. Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

    PubMed

    Qin, Jinwen; Cao, Minhua

    2016-04-20

    Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs.

  14. Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

    PubMed

    Qin, Jinwen; Cao, Minhua

    2016-04-20

    Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs. PMID:26990878

  15. A model for the effects of germanium on silica biomineralization in choanoflagellates

    PubMed Central

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  16. Cosmic-ray Electrons and Atmospheric Gamma-rays in 1-30 GeV observed with Balloon-borne CALET prototype detector

    NASA Astrophysics Data System (ADS)

    Niita, Tae; Fuke, Hideyuki; Yoshida, Kenji; Katayose, Yusaku; Torii, Shoji; Akaike, Yosui; Katsuaki Kasahara, ., , prof.; Tamura, Tadahisa; Ueyama, Yoshitaka; Ozawa, Shunsuke; Shimizu, Yuki; Kyutan, Marie; Murakami, Hiroyuki; Ito, Daijiro; Karube, Mikihiko; Kondo, Keinosuke

    2012-07-01

    We carried out the balloon experiments using CALET (CALorimetric Electron Telescope) proto-type detectors in May 2006 (bCALET-1) and in August 2009 (bCALET-2) for verification of the detector performance and of the capability of measuring cosmic rays at high altitude. The bCALET-2 instrument for observing electrons and gamma-rays is composed of an imaging calorimeter, consisting of 4096 scintillating fibers and 7 tungsten plates of 3.6 radiation lengths depth in total, and a total absorption calorimeter, consisting of 60 BGO logs of 13.4 radiation lengths depth. The bCALET-2 was launched at the Taiki Aerospace Research Field, Japan Aerospace Exploration Agency, in Hokkaido, and flew successfully for 2.5 hours at a level altitude of 35 km. We will present energy spectra of the 1ry and 2ry electrons and the atmospheric gamma-rays in the energy range of 1-30 GeV observed by bCALET-2. The results will be compared with our previous observations, bCALET-1 and BETS.

  17. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  18. Anomalous small angle x-ray scattering studies of amorphous metal-germanium alloys

    SciTech Connect

    Rice, M.

    1993-12-01

    This dissertation addresses the issue of composition modulation in sputtered amorphous metal-germanium thin films with the aim of understanding the intermediate range structure of these films as a function of composition. The investigative tool used in this work is anomalous small-angle X-ray scattering (ASAXS). The primary focus of this investigation is the amorphous iron-germanium (a-Fe{sub x}Ge{sub 100-x}) system with particular emphasis on the semiconductor-rich regime. Brief excursions are made into the amorphous tungsten-germanium (a-W{sub x}Ge{sub 100-x}) and the amorphous molybdenum-germanium (a-Mo{sub x}Ge{sub 100-x}) systems. All three systems exhibit an amorphous structure over a broad composition range extending from pure amorphous germanium to approximately 70 atomic percent metal when prepared as sputtered films. Across this composition range the structures change from the open, covalently bonded, tetrahedral network of pure a-Ge to densely packed metals. The structural changes are accompanied by a semiconductor-metal transition in all three systems as well as a ferromagnetic transition in the a-Fe{sub x}Ge{sub 100-x} system and a superconducting transition in the a-Mo{sub x}Ge{sub 100-x} system. A long standing question, particularly in the a-Fe{sub x}Ge{sub 100-x} and the a-Mo{sub x}Ge{sub 100-x} systems, has been whether the structural changes (and therefore the accompanying electrical and magnetic transitions) are accomplished by homogeneous alloy formation or phase separation. The application of ASAXS to this problem proves unambiguously that fine scale composition modulations, as distinct from the simple density fluctuations that arise from cracks and voids, are present in the a-Fe{sub x}Ge{sub 100-x}, a-W{sub x}Ge{sub 100-x}, and a-Mo{sub x}Ge{sub 100-x} systems in the semiconductor-metal transition region. Furthermore, ASAXS shows that germanium is distributed uniformly throughout each sample in the x<25 regime of all three systems.

  19. Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

    NASA Astrophysics Data System (ADS)

    Wada, T.; Arai, Y.; Baba, S.; Hanaoka, M.; Hattori, Y.; Ikeda, H.; Kaneda, H.; Kochi, C.; Miyachi, A.; Nagase, K.; Nakaya, H.; Ohno, M.; Oyabu, S.; Suzuki, T.; Ukai, S.; Watanabe, K.; Yamamoto, K.

    2016-07-01

    We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 \\upmu m), (2) large power consumption (10 \\upmu W/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface- activated bond technology, whose cut-off wavelength is longer than 160 \\upmu m, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 \\upmu W/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to thermal cycling down to 3 K. With these new techniques, we are now developing a 32 × 32 FIR imaging sensor.

  20. Electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide.

    PubMed

    Wu, Minxian; Brooks, Neil R; Schaltin, Stijn; Binnemans, Koen; Fransaer, Jan

    2013-04-14

    The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as germanium source as it has a solubility of 0.47 M, up to 13 times the solubility of GeCl4 in [BMP][DCA]. Cyclic voltammograms show an irreversible electrochemical behavior and two reduction waves were observed. The wave at the more positive potential was assigned to the reduction of Ge(4+) to Ge(2+). The wave at the more negative potential was attributed to the formation of Ge(0). The diffusion coefficient of Ge(4+) in [BMP][DCA] containing 0.1 M [GeCl4(BuIm)2] is 1.1 × 10(-12) m(2) s(-1), and the exchange current density is 2 × 10(-4) A m(-2) at 50 °C. Polymerization of dicyanamide anions took place at the anode in the solution of [BMP][DCA]. The polymerization reaction could be avoided by using an equimolar [BMP]Cl-[BMP][DCA] mixture as electrolyte. Smooth, porous germanium films were electrodeposited on both copper and silicon substrates.

  1. Germanium gamma-ray spectrometer PGS for the MARS-96 mission

    NASA Astrophysics Data System (ADS)

    Mitrofanov, Igor G.; Anfimov, D. S.; Chernenko, A. M.; Dolidze, V. S.; Kostenko, V. I.; Isupov, O. E.; Pozanenko, A. S.; Ton'shev, A. K.; Ushakov, D. A.; Bobrovnitsky, Yu. I.; Tomilina, T. M.; Auchampaugh, George F.; Cafferty, Maureen M.; Drake, D. M.; Fenimore, Edward E.; Klebesadel, R. W.; Longmire, J. L.; Moss, Calvin E.; Reedy, R. C.; Valencia, J. E.

    1996-10-01

    The precision gamma-ray spectrometer (PGS) on the Russian MARS-96 spacecraft is designed to measure 0.1-8 MeV gamma rays in order to determine the elemental composition of the Martian surface, to study solar flares, and to determine energy spectra and times of arrival of gamma-ray bursts. The PGS instrument contains two high-purity, n-type germanium crystals, each similar to the one used on the Mars observer mission. Each crystal is contained in a titanium can with helicoflex cryogenic metal seals. An annealing capability allows repair of radiation damage. The detectors are cooled via nitrogen heat pipes attached to a passive radiator mounted on the back side of a solar panel. The radiators are designed to keep the Ge detectors below 100 K during the interplanetary flight. The electronics include first-stage electronics mounted on each crystal can and 4096-channel pulse height analyzers. Two parallel channels of electronics are provided and can be cross-switched by telecommands. In November 1995 integration of the flight detectors with flight electronics and testing of the complete system cooled by the passive radiator were successfully completed. The energy resolution degrades to about 3 keV in the flight configuration. Warming the radiators indicated that for the worst case when the radiator views Mars at the equator the maximum temperature of the detectors will be limited by the diode action of the heat pipes to 118 K. Extensive calibrations with radioactive sources are in progress. We conclude that we have an improved design for planetary and gamma-ray burst studies and the PGS instrument is ready for launch in November 1996.

  2. Germanium gamma-ray spectrometer PGS for the MARS-96 mission

    SciTech Connect

    Mitrofanov, I.G.; Anfimov, D.S.; Chernenko, A.M.

    1996-09-01

    The Precision Gamma-ray Spectrometer (PGS) on the Russian MARS-96 spacecraft is designed to measure 0.1--8 MeV gamma rays in order to determine the elemental composition of the Martian surface, to study solar flares, and to determine energy spectra and times of arrival of gamma-ray bursts. The PGS instrument contains two high-purity, n-type germanium crystals, each similar to the one used on the Mars Observer mission. Each crystal is contained in a titanium can with Helicoflex cryogenic metal seals. An annealing capability allows repair of radiation damage. The detectors are cooled via nitrogen heat pipes attached to a passive radiator mounted on the back side of a solar panel. The radiators are designed to keep the Ge detectors below 100 K during the interplanetary flight. The electronics include first-stage electronics mounted on each crystal can and 4096-channel pulse height analyzers. Two parallel channels of electronics are provided and can be cross-switched by telecommands. In November 1995 integration of the flight detectors with flight electronics and testing of the complete system cooled by the passive radiator were successfully completed. The energy resolution degrades to about 3 keV in the flight configuration. Warming the radiators indicated that for the worst case when the radiator views Mars at the equator the maximum temperature of the detectors will be limited by the diode action of the heat pipes to 118 K. Extensive calibrations with radioactive sources are in progress. The authors conclude that they have an improved design for planetary and gamma-ray burst studies and the PGS instrument is ready for launch in November 1996.

  3. High responsivity near-infrared photodetectors in evaporated Ge-on-Si

    NASA Astrophysics Data System (ADS)

    Sorianello, V.; De Iacovo, A.; Colace, L.; Fabbri, A.; Tortora, L.; Buffagni, E.; Assanto, G.

    2012-08-01

    Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 μm responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics.

  4. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  5. Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation.

    PubMed

    Gunji, M; Thombare, S V; Hu, S; McIntyre, P C

    2012-09-28

    We report on the directed synthesis of germanium oxide (GeO(x)) nanowires (NWs) by locally catalyzed thermal oxidation of aligned arrays of gold catalyst-tipped germanium NWs. During oxygen anneals conducted above the Au-Ge binary eutectic temperature (T > 361 °C), one-dimensional oxidation of as-grown Ge NWs occurs by diffusion of Ge through the Au-Ge catalyst droplet, in the presence of an oxygen containing ambient. Elongated GeO(x) wires grow from the liquid catalyst tip, consuming the adjoining Ge NWs as they grow. The oxide NWs' diameter is dictated by the catalyst diameter and their alignment generally parallels that of the growth direction of the initial Ge NWs. Growth rate comparisons reveal a substantial oxidation rate enhancement in the presence of the Au catalyst. Statistical analysis of GeO(x) nanowire growth by ex situ transmission electron microscopy and scanning electron microscopy suggests a transition from an initial, diameter-dependent kinetic regime, to diameter-independent wire growth. This behavior suggests the existence of an incubation time for GeO(x) NW nucleation at the start of vapor-liquid-solid oxidation.

  6. Crystalline silicon germanium films grown on crystalline silicon substrates by solid phase crystallization

    NASA Astrophysics Data System (ADS)

    Kojima, Yuji; Isomura, Masao

    2015-08-01

    We researched on crystalline silicon-germanium films (c-SiGe) for bottom cells of silicon-based multijunction solar cells. We conducted the epitaxial crystal growth of SiGe with approximately 75% Ge fraction due to solid phase crystallization (SPC) from amorphous silicon-germanium (a-SiGe) precursors on n-type (100) Si substrates. We evaluated the preparation conditions of a-SiGe precursors for the SPC epitaxial growth. The epitaxial growth was successfully conducted and (100)-oriented c-SiGe films were formed. The epitaxial growth was effectively promoted in the a-SiGe precursors prepared at the substrate temperature from 250 to 300 °C, but is not sufficiently promoted in the a-SiGe precursors prepared below 250 °C. The density of a-SiGe precursors is relatively low at the substrate temperature below 250 °C, and the low-density structures cause the impurity incorporation from the air-exposed surface. The impurities are probably the main cause of disturbance of the epitaxial growth. On the other hand, the random crystallization occurred in the SPC of the a-SiGe precursors prepared at 350 °C. The precursors have the slightly crystallized structure and are not suitable for the SPC.

  7. Simulation and Analysis of Large-Scale Compton Imaging Detectors

    SciTech Connect

    Manini, H A; Lange, D J; Wright, D M

    2006-12-27

    We perform simulations of two types of large-scale Compton imaging detectors. The first type uses silicon and germanium detector crystals, and the second type uses silicon and CdZnTe (CZT) detector crystals. The simulations use realistic detector geometry and parameters. We analyze the performance of each type of detector, and we present results using receiver operating characteristics (ROC) curves.

  8. Detector Arrays For Infrared Astronomy

    NASA Technical Reports Server (NTRS)

    Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

    1988-01-01

    Paper describes status of program for developing integrated infrared detectors for astronomy. Program covers variety of detectors, including extrinsic silicon, extrinsic germanium, and indium antimonide devices with hybrid silicon multiplexers. Paper notes for arrays to reach background noise limit in cryogenic telescope, continued reductions in readout noise and dark current needed.

  9. Synthesis and characterization of silicon and germanium nanowires, silica nanotubes, and germanium telluride/tellurium nanostructures

    NASA Astrophysics Data System (ADS)

    Tuan, Hsing-Yu

    A supercritical fluid-liquid solid (SFLS) nanowire growth process using alkanethiol-coated Au nanoparticles to seed silicon nanowires was developed for synthesizing silicon nanowires in solution. The organic solvent was found to significantly influence the silicon precursor decomposition in solution. 46.8 mg of silicon nanowires with 63% yield of silicon nanowire synthesis were achieved while using benzene as a solvent. The most widely used metal for seeding Si and Ge nanowires is Au. However, Au forms deep trap in both Si and Ge and alternative metal seeds are more desirable for electronic applications. Different metal nanocrystals were studied for Si and Ge nanowire synthesis, including Co, Ni, CuS, Mn, Ir, MnPt 3, Fe2O3, and FePt. All eight metals have eutectic temperatures with Si and Ge that are well above the nanowire growth temperature. Unlike Au nanocrystals, which seed nanowire growth through the formation of a liquid Au:Si (Au:Ge) alloy, these other metals seed nanowires by forming solid silicide alloys, a process we have called "supercritical fluid-solid-solid" (SFSS) growth. Moreover, Co and Ni nanoparticles were found to catalyze the decomposition of various silane reactants that do not work well to make Si nanowires using Au seeds. In addition to seeding solid nanowires, CuS nanoparticles were found to seed silica nanotubes via a SFSS like mechanism. 5% of synthesized silica nanotubes were coiled. Heterostructured nanomaterials are interesting since they merge the properties of the individual materials and can be used in diverse applications. GeTe/Te heterostructures were synthesized by reacting diphenylgermane (DPG) and TOP-Te in the presence of organic surfactants. Aligned Te nanorods were grown on the surface facets of micrometer-size germanium telluride particles.

  10. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect

    Lu, Cimang Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  11. A first-principles core-level XPS study on the boron impurities in germanium crystal

    SciTech Connect

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2013-12-04

    We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

  12. High-capacity nanostructured germanium-containing materials and lithium alloys thereof

    DOEpatents

    Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

    2010-08-24

    Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0Ge.sub.(z-1), where 0germanium exhibit a combination of improved capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

  13. The first ionothermal synthesis of a germanium phosphate with one-dimensional chain-like structure.

    PubMed

    Wang, Wei; Li, Yang; Liu, Lei; Dong, Jinxiang

    2012-09-21

    A novel germanium phosphate with a chain-like framework constructed from GeO(4)N(2) octahedra and PO(4) tetrahedra, [NH(4)](2)[Ge(NH(3))(2)(PO(4))(2)]·0.38H(2)O, was first synthesized via in situ decomposition of urea from ionic eutectic mixtures comprising urea and quaternary ammonium salts. PMID:22847659

  14. Germanium as negative electrode material for sodium-ion batteries

    SciTech Connect

    Baggetto, Loic; Keum, Jong Kahk; Browning, Jim; Veith, Gabriel M

    2013-01-01

    Germanium electrodes show a reversible Na-ion reaction at potentials of 0.15 and 0.6 V during discharge and charge, respectively. The reaction is accompanied with a reversible capacity close to 350 mAh g-1, which matches the value expected for the formation of NaGe. The electrode capacity retention is stable over 15 cycles but declines somewhat rapidly afterwards. This decline is typical for alloying systems undergoing large volume expansion, and calls for engineering solutions to confine the mechanical stress and control the electrolyte decomposition reactions that are likely to be the main sources of degradations. The rate performance results highlight the huge potential of nanosized germanium as a potential Na-ion anode. The reaction kinetics is found to be very good with about 220 mAh g-1 delivered at 170 C. Finally, the preliminary XRD results do not reveal the formation of crystalline phases at full (dis)charge.

  15. Synthesis and photoluminescence of ultra-pure germanium nanoparticles

    NASA Astrophysics Data System (ADS)

    Chivas, R.; Yerci, S.; Li, R.; Dal Negro, L.; Morse, T. F.

    2011-09-01

    We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core-shell configuration with highly crystalline core material. Powder X-ray diffraction measurements verify the presence of highly pure, nano-scale germanium with average crystallite size of 30 nm and micro-strain of 0.058%. X-ray photoelectron spectroscopy demonstrates that GeO x ( x ⩽ 2) shells cover the surfaces of the nanoparticles. Under optical excitation, these nanoparticles exhibit two separate emission bands at room temperature: a visible emission at 500 nm with 0.5-1 ns decay times and an intense near-infrared emission at 1575 nm with up to ˜20 μs lifetime.

  16. Femtosecond third-order nonlinear spectra of lead-germanium oxide glasses containing silver nanoparticles.

    PubMed

    De Boni, Leonardo; Barbano, Emerson C; de Assumpção, Thiago A; Misoguti, Lino; Kassab, Luciana R P; Zilio, Sergio C

    2012-03-12

    This work reports on the spectral dependence of both nonlinear refraction and absorption in lead-germanium oxide glasses (PbO-GeO₂) containing silver nanoparticles. We have found that this material is suitable for all-optical switching at telecom wavelengths but at the visible range it behaves either as a saturable absorber or as an optical limiter.

  17. The Majorana Demonstrator: Progress towards showing the feasibility of a 76Ge neutrinoless double-beta decay experiment

    SciTech Connect

    Finnerty, P.; Aguayo, Estanislao; Amman, M.; Avignone, Frank T.; Barabash, Alexander S.; Barton, P. J.; Beene, Jim; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Doe, P. J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Fraenkle, Florian; Galindo-Uribarri, A.; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, M. A.; Johnson, R. A.; Keeter, K.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; Leon, Jonathan D.; Leviner, L.; Loach, J. C.; Looker, Q.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Perumpilly, Gopakumar; Phillips, David; Poon, Alan; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Steele, David; Strain, J.; Timkin, V.; Tornow, Werner; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2014-03-24

    The Majorana Demonstrator will search for the neutrinoless double-beta decay (0*) of the 76Ge isotope with a mixed array of enriched and natural germanium detectors. The observation of this rare decay would indicate the neutrino is its own anti-particle, demonstrate that lepton number is not conserved, and provide information on the absolute mass-scale of the neutrino. The Demonstrator is being assembled at the 4850 foot level of the Sanford Underground Research Facility in Lead, South Dakota. The array will be contained in a lowbackground environment and surrounded by passive and active shielding. The goals for the Demonstrator are: demonstrating a background rate less than 3 counts tonne -1 year-1 in the 4 keV region of interest (ROI) surrounding the 2039 keV 76Ge endpoint energy; establishing the technology required to build a tonne-scale germanium based double-beta decay experiment; testing the recent claim of observation of 0; and performing a direct search for lightWIMPs (3-10 GeV/c2).

  18. [Si(SiMe3)3]6Ge18M (M = Zn, Cd, Hg): neutral metalloid cluster compounds of germanium as highly soluble building blocks for supramolecular chemistry.

    PubMed

    Henke, Florian; Schenk, Christian; Schnepf, Andreas

    2009-11-14

    Very recently it was shown that the metalloid cluster compound {Ge(9)[Si(SiMe(3))(3)](3)}(-) can be used for subsequent reactions as the shielding of the cluster core is rather incomplete. So the reaction of with M(+) sources of group 11 metals gives metalloid cluster compounds of the formulae {MGe(18)[Si(SiMe(3))(3)](6)}(-) (M = Au, Ag, Cu). These reactions can be seen as first steps into a supramolecular chemistry with metalloid cluster compounds. However, further build-up reactions lead to insoluble products, thus better soluble starting materials are needed for further build-up reactions. Here the first neutral MGe(18)[Si(SiMe(3))(3)](6) (M = Hg, Cd, Zn) compounds are described, exhibiting a strongly enhanced solubility in inert solvents. Beside the synthesis, the structural properties as well as the bonding situations in these cluster compounds are discussed. PMID:20449189

  19. Gallium-doped germanium, evaluation of photoconductors, part 1

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1979-01-01

    Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

  20. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  1. Proton irradiation of germanium isotope multilayer structures at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Schneider, S.; Bracht, H.; Petersen, M. C.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted

    2008-02-01

    Irradiation of germanium (Ge) isotope heterostructures with 2.5 MeV protons have been performed at 550 °C. The applied proton flux was varied between 1.0 and 1.5 μA leading to various rates of Frenkel pair production. After irradiation, concentration profiles of the Ge isotopes were recorded by means of secondary ion mass spectrometry (SIMS). An inhomogeneous broadening of the isotope structure was observed. In addition to the effect of irradiation enhanced self-diffusion, an influence of the formation of microscopic defects on the detected broadening was ascertained. Atomic force and scanning electron microscopy show that the microscopic defects are most probably resulting from an aggregation of vacancies formed during irradiation. Numerical analysis of Ge profiles not disturbed by microdefect formation indicates a significant contribution of self-interstitials to self-diffusion under irradiation.

  2. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    NASA Astrophysics Data System (ADS)

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  3. Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector

    NASA Astrophysics Data System (ADS)

    Ang, Kah-Wee; Ng, Joseph Weisheng; Lo, Guo-Qiang; Kwong, Dim-Lee

    2009-06-01

    This letter investigates the impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium (Ge) p-i-n photodetector. We show that the existence of defect-induced traps within the forbidden gap forms the underlying leakage mechanism. Enhancing the electric field intensity is found to reduce the activation energy that governs the leakage generation rates. In the presence of enlarged band-bending, the dark current generation is further aggravated by the enhancement in electrons and holes tunneling from the resulting deep levels into the conduction and valence bands, respectively. Such field-enhanced band tunneling effect becomes increasingly prominent with a downsizing of the detector's depletion width, which imposes a design trade-off between leakage generation and bandwidth enhancement.

  4. Detached Growth of Germanium and Germaniumsilicon

    NASA Technical Reports Server (NTRS)

    Dold, P.; Schweizer, M.; Szofran, F.; Benz, K. W.

    1999-01-01

    Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

  5. Ionization Measurements of SuperCDMS SNOLAB 100 mm Diameter Germanium Crystals

    SciTech Connect

    Chagani, H.; Bauer, D.A.; Brandt, D.; Brink, P.L.; Cabrera, B.; Cherry, M.; Silva, E.Do Couto e; Godfrey, G.G.; Hall, J.; Hansen, S.; Hasi, J.; Kelsey, M.; Kenney, C.J.; Mandic, V.; Nagasawa, D.; Novak, L.; Mirabolfathi, N.; Partridge, R.; Radpour, R.; Resch, R.; Sadoulet, B.; /UC, Berkeley /Stanford U. /SLAC /Stanford U. /Santa Clara U. /Minnesota U.

    2012-06-12

    Scaling cryogenic Germanium-based dark matter detectors to probe smaller WIMP-nucleon cross-sections poses significant challenges in the forms of increased labor, cold hardware, warm electronics and heat load. The development of larger crystals alleviates these issues. The results of ionization tests with two 100 mm diameter, 33 mm thick cylindrical detector-grade Germanium crystals are presented here. Through these results the potential of using such crystals in the Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment is demonstrated.

  6. Synthesis and biological evaluation of Germanium(IV)-polyphenol complexes as potential anti-cancer agents.

    PubMed

    Pi, Jiang; Zeng, Jing; Luo, Jian-Jun; Yang, Pei-Hui; Cai, Ji-Ye

    2013-05-15

    Germanium (Ge) is considered to play a key role in the pharmacological effects of some medicinal plants. Here, two new Ge(IV)-polyphenol complexes were synthesized and measured for their potential biological activities. The results indicated that these Ge(IV)-polyphenol complexes possessed great anti-oxidative activities, both showing stronger hydroxyl scavenging effects than their corresponding ligands. We also demonstrated the strong intercalating abilities of Ge(IV)-polyphenol complexes into calf thymus-DNA molecules. In addition, these two Ge(IV)-polyphenol complexes showed strong proliferative inhibition effect on HepG2 cancer cells. Moreover, the morphological changes in HepG2 cells induced by Ge(IV)-polyphenol complexes were detected by atomic force microscopy. All these results collectively suggested that Ge(IV)-polyphenol complexes could be served as promising pharmacologically active substances against cancer treatment.

  7. Aqueous solution synthesis of reduced graphene oxide-germanium nanoparticles and their electrical property testing

    NASA Astrophysics Data System (ADS)

    Yin, Huabin; Luo, Jinmei; Yang, Peihui; Yin, Pinghe

    2013-10-01

    Aqueous solution synthesis of reduced graphene oxide-germanium nanoparticles (RGO-GeNPs) was developed using graphene oxide (GO) as stabilizer, which could be conducive to obtain better excellent electrical properties. The information about morphology and chemical composition of the nanomaterials were obtained by TEM, FTIR, EDS, and XRD measurements. Stable aqueous dispersibility of RGO-GeNPs was further improved by poly(sodium 4-styrenesulfonate) (PSS) to obtain amphiphilic polymer-coated RGO-GeNPs (PSS-RGO-GeNPs). A possible mechanism to interpret the formation of RGO-GeNPs was proposed. The as-synthesized RGO-GeNPs showed excellent battery performance when used as an anode material for Li ion batteries. The resulting nanocomposites exhibited high specific capacity and good cycling stability after 80 cycles. This study showed a facile strategy to synthetize graphene and Ge nanocomposites which can be a hopeful anode material with excellent electrical properties for lithium ion batteries.

  8. Experimental study of germanium adsorption on goethite and germanium coprecipitation with iron hydroxide: X-ray absorption fine structure and macroscopic characterization

    NASA Astrophysics Data System (ADS)

    Pokrovsky, O. S.; Pokrovski, G. S.; Schott, J.; Galy, A.

    2006-07-01

    Adsorption of germanium on goethite was studied at 25 °C in batch reactors as a function of pH (1-12), germanium concentration in solution (10 -7 to 0.002 M) and solid/solution ratio (1.8-17 g/L). The maximal surface site density determined via Ge adsorption experiments at pH from 6 to 10 is equal to 2.5 ± 0.1 μmol/m 2. The percentage of adsorbed Ge increases with pH at pH < 9, reaches a maximum at pH ˜ 9 and slightly decreases when pH is further increased to 11. These results allowed generation of a 2-p K Surface Complexation Model (SCM) which implies a constant capacitance of the electric double layer and postulates the presence of two Ge complexes, >FeO-Ge(OH)30 and >FeO-GeO(OH)2-, at the goethite-solution interface. Coprecipitation of Ge with iron oxy(hydr)oxides formed during Fe(II) oxidation by atmospheric oxygen or by Fe(III) hydrolysis in neutral solutions led to high Ge incorporations in solid with maximal Ge/Fe molar ratio close to 0.5. The molar Ge/Fe ratio in precipitated solid is proportional to that in the initial solution according to the equation (Ge/Fe) solid = k × (Ge/Fe) solution with 0.7 ⩽ k ⩽ 1.0. The structure of adsorbed and coprecipitated Ge complexes was further characterized using XAFS spectroscopy. In agreement with previous data on oxyanions adsorption on goethite, bi-dentate bi-nuclear surface complexes composed of tetrahedrally coordinated Ge attached to the corners of two adjacent Fe octahedra represent the dominant contribution to the EXAFS signal. Coprecipitated samples with Ge/Fe molar ratios >0.1, and samples not aged in solution (<1 day) having intermediate Ge/Fe ratios (0.01-0.1) show 4 ± 0.3 oxygen atoms at 1.76 ± 0.01 Å around Ge. Samples less concentrated in Ge (0.001 < Ge/Fe < 0.10) and aged longer times in solution (up to 280 days) exhibit a splitting of the first atomic shell with Ge in both tetrahedral ( R = 1.77 ± 0.02 Å) and octahedral ( R = 1.92 ± 0.03 Å) coordination with oxygen. In these samples

  9. The Germanium Dichotomy in Martian Meteorites

    NASA Technical Reports Server (NTRS)

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  10. Concentrations and their ratio of (222)Rn decay products in rainwater measured by gamma-ray spectrometry using a low-background Ge detector.

    PubMed

    Takeyasu, Masanori; Iida, Takao; Tsujimoto, Tadashi; Yamasaki, Keizo; Ogawa, Yoshihiro

    2006-01-01

    The concentrations and the concentration ratios of individual short-lived (222)Rn decay products ((214)Pb and (214)Bi) in rainwater were measured at Kumatori village (34.39 degrees N, 135.35 degrees E, approximately 70 m above sea level) in Osaka, Japan, by gamma-ray spectrometry using a low-background Ge detector. The dependence of the time variations of the concentrations and their ratios on rainfall rate was investigated. It was observed that the concentrations were negatively correlated with the rainfall rate in some rainfall events, and that there was no clear correlation in other rainfall events. The changes in the dependence of the concentration on the rainfall rate occurred after the passage of a cold front during a single rainfall event. The concentration ratios showed a weak negative correlation with the rainfall rate for most of the observed rainfall events. A scavenging model was designed in this study in order to explain the observation results. Based on the relationship between the concentrations of (214)Pb and (214)Bi in the rainwater and the rainfall rate for an individual rainfall event, the increase in the environmental gamma-ray dose rate from (214)Pb and (214)Bi deposited on the ground was calculated, and the calculated increase agreed well with that observed by the in situ measurement on flat ground. PMID:16530896

  11. Measurement of Di-electron Continuum in p+p at √s=200 GeV collisions by PHENIX using the Hadron Blind Detector

    NASA Astrophysics Data System (ADS)

    Rolnick, Sky

    2012-10-01

    Dielectrons provide a very important probe for studying the hot dense nuclear matter created in heavy ion collisions at RHIC. Since dielectrons are color neutral and produced during all stages of the collision, they provide access to an abundance of information including thermal sources, Dalitz decays, vector meson resonances, correlated open charm and bottom decay, and Drell-Yan processes. Previous measurements from PHENIX have indicated an unexpectedly large enhancement of dielectrons in Au+Au collisions in the low mass region (0.3-0.8 GeV/c^2), a possible signal of chiral symmetry restoration.footnotetextS. Afanasiev et al. [PHENIX Collaboration], arXiv:0706.3034 [nucl-ex]. These measurements were limited by large systematic uncertainties, primarily from a poor S/B ratio. In 2009 the PHENIX experiment was upgraded with the addition of the Hadron Blind Detector which will improve the background rejection by allowing removal of pairs from both partially reconstructed Dalitz decays and photon conversions. In this talk, we will report on the results obtained from 2009 data in p+p using the HBD which will serve as a baseline for the Au+Au results obtained in 2010.

  12. Electrodeposition of germanium at elevated temperatures and pressures from ionic liquids.

    PubMed

    Wu, Minxian; Vanhoutte, Gijs; Brooks, Neil R; Binnemans, Koen; Fransaer, Jan

    2015-05-14

    The electrodeposition of germanium at elevated temperatures up to 180 °C and pressures was studied from the ionic liquids 1-butyl-1-methylpyrrolidinium dicyanamide and 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide containing [GeCl4(BuIm)2] (where BuIm = 1-butylimidazole) or GeCl4. Cyclic voltammetry (CV), electrochemical quartz crystal microbalance (EQCM), rotating ring-disk electrode (RRDE), scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), electron backscatter diffraction (EBSD) and Auger electron spectroscopy (AES) were used to investigate the electrochemical behavior and the properties of the electrodeposited germanium. Electrodeposition at elevated temperatures leads to higher deposition rates due to: (1) increase in the diffusion rate of the electroactive germanium compounds; (2) faster electrochemical kinetics in the electrolyte; and (3) higher electrical conductivity of the electrodeposited germanium film. Moreover, the morphology of the germanium film is also of a better quality at higher electrodeposition temperatures due to an increase in adatom mobility.

  13. Reactivity of divalent germanium alkoxide complexes is in sharp contrast to the heavier tin and lead analogues.

    PubMed

    Ferro, Lorenzo; Hitchcock, Peter B; Coles, Martyn P; Fulton, J Robin

    2012-02-01

    The chemistry of β-diketiminate germanium alkoxide complexes has been examined and shown to be in sharp contrast to its heavier congeners. For instance, (BDI)GeOR (BDI = [{N(2,6-(i)Pr(2)C(6)H(3))C(Me)}(2)CH], R = (i)Pr, (s)Bu, (t)Bu) does not react with carbon dioxide to form a metal carbonate complex. Addition of aliphatic electrophiles, such as methyl iodide or methyl triflate, results in the net oxidative addition to the germanium, giving cationic tetravalent germanium complexes, [(BDI)Ge(Me)OR][X] (X = I, OTf). An examination of the contrasting reactivities of the alkoxide ligand and the germanium loan pair with Lewis acids yielded the unusual germanium(II)-copper(I) adduct, {μ(2)-Cu(2)I(2)}[(BDI)GeO(t)Bu](2). This complex not only displays a rare example of a divalent Ge-Cu bond, but is the first example in which a planar Cu(2)I(2) diamond core possesses a three-coordinate copper bound to another metal center. PMID:22242862

  14. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    NASA Astrophysics Data System (ADS)

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  15. Study of the process e+e- → p p bar in the c.m. energy range from threshold to 2 GeV with the CMD-3 detector

    NASA Astrophysics Data System (ADS)

    Akhmetshin, R. R.; Amirkhanov, A. N.; Anisenkov, A. V.; Aulchenko, V. M.; Banzarov, V. Sh.; Bashtovoy, N. S.; Berkaev, D. E.; Bondar, A. E.; Bragin, A. V.; Eidelman, S. I.; Epifanov, D. A.; Epshteyn, L. B.; Erofeev, A. L.; Fedotovich, G. V.; Gayazov, S. E.; Grebenuk, A. A.; Gribanov, S. S.; Grigoriev, D. N.; Gromov, E. M.; Ignatov, F. V.; Ivanov, V. L.; Karpov, S. V.; Kasaev, A. S.; Kazanin, V. F.; Khazin, B. I.; Kirpotin, A. N.; Koop, I. A.; Kovalenko, O. A.; Kozyrev, A. N.; Kozyrev, E. A.; Krokovny, P. P.; Kuzmenko, A. E.; Kuzmin, A. S.; Logashenko, I. B.; Lukin, P. A.; Mikhailov, K. Yu.; Okhapkin, V. S.; Otboev, A. V.; Pestov, Yu. N.; Pivovarov, S. G.; Popov, A. S.; Razuvaev, G. P.; Romanov, A. L.; Ruban, A. A.; Ryskulov, N. M.; Ryzhenenkov, A. E.; Shebalin, V. E.; Shemyakin, D. N.; Shwartz, B. A.; Shwartz, D. B.; Sibidanov, A. L.; Shatunov, P. Yu.; Shatunov, Yu. M.; Solodov, E. P.; Titov, V. M.; Talyshev, A. A.; Vorobiov, A. I.; Yudin, Yu. V.; Zharinov, Yu. M.

    2016-08-01

    Using a data sample of 7.7 pb-1 collected with the CMD-3 detector at the VEPP-2000 e+e- collider we select about 2900 events of the process e+e- → p p bar and measure its cross section at 12 energy points with about 6% systematic uncertainty. From the angular distribution of produced nucleons we obtain the ratio GE /GM.

  16. Measurement of the muon neutrino inclusive charged-current cross section in the energy range of 1-3 GeV with the T2K INGRID detector

    NASA Astrophysics Data System (ADS)

    Abe, K.; Andreopoulos, C.; Antonova, M.; Aoki, S.; Ariga, A.; Assylbekov, S.; Autiero, D.; Barbi, M.; Barker, G. J.; Barr, G.; Bartet-Friburg, P.; Batkiewicz, M.; Bay, F.; Berardi, V.; Berkman, S.; Bhadra, S.; Blondel, A.; Bolognesi, S.; Bordoni, S.; Boyd, S. B.; Brailsford, D.; Bravar, A.; Bronner, C.; Calland, R. G.; Cao, S.; Caravaca Rodríguez, J.; Cartwright, S. L.; Castillo, R.; Catanesi, M. G.; Cervera, A.; Cherdack, D.; Chikuma, N.; Christodoulou, G.; Clifton, A.; Coleman, J.; Collazuol, G.; Cremonesi, L.; Dabrowska, A.; De Rosa, G.; Dealtry, T.; Dennis, S. R.; Densham, C.; Dewhurst, D.; Di Lodovico, F.; Di Luise, S.; Dolan, S.; Drapier, O.; Duffy, K.; Dumarchez, J.; Dytman, S.; Dziewiecki, M.; Emery-Schrenk, S.; Ereditato, A.; Feusels, T.; Finch, A. J.; Fiorentini, G. A.; Friend, M.; Fujii, Y.; Fukuda, D.; Fukuda, Y.; Furmanski, A. P.; Galymov, V.; Garcia, A.; Giffin, S.; Giganti, C.; Gilje, K.; Gonin, M.; Grant, N.; Hadley, D. R.; Haegel, L.; Haigh, M. D.; Hamilton, P.; Hansen, D.; Hara, T.; Hartz, M.; Hasegawa, T.; Hastings, N. C.; Hayashino, T.; Hayato, Y.; Helmer, R. L.; Hierholzer, M.; Hillairet, A.; Himmel, A.; Hiraki, T.; Hirota, S.; Holeczek, J.; Horikawa, S.; Hosomi, F.; Huang, K.; Ichikawa, A. K.; Ieki, K.; Ikeda, M.; Imber, J.; Insler, J.; Intonti, R. A.; Irvine, T. J.; Ishida, T.; Ishii, T.; Iwai, E.; Iwamoto, K.; Izmaylov, A.; Jacob, A.; Jamieson, B.; Jiang, M.; Johnson, S.; Jo, J. H.; Jonsson, P.; Jung, C. K.; Kabirnezhad, M.; Kaboth, A. C.; Kajita, T.; Kakuno, H.; Kameda, J.; Karlen, D.; Karpikov, I.; Katori, T.; Kearns, E.; Khabibullin, M.; Khotjantsev, A.; Kielczewska, D.; Kikawa, T.; Kim, H.; Kim, J.; King, S.; Kisiel, J.; Kobayashi, T.; Koch, L.; Koga, T.; Konaka, A.; Kondo, K.; Kopylov, A.; Kormos, L. L.; Korzenev, A.; Koshio, Y.; Kropp, W.; Kudenko, Y.; Kurjata, R.; Kutter, T.; Lagoda, J.; Lamont, I.; Larkin, E.; Laveder, M.; Lawe, M.; Lazos, M.; Lindner, T.; Liptak, Z. J.; Litchfield, R. P.; Longhin, A.; Lopez, J. P.; Ludovici, L.; Lu, X.; Magaletti, L.; Mahn, K.; Malek, M.; Manly, S.; Marino, A. D.; Marteau, J.; Martin, J. F.; Martins, P.; Martynenko, S.; Maruyama, T.; Matveev, V.; Mavrokoridis, K.; Ma, W. Y.; Mazzucato, E.; McCarthy, M.; McCauley, N.; McFarland, K. S.; McGrew, C.; Mefodiev, A.; Mezzetto, M.; Mijakowski, P.; Miller, C. A.; Minamino, A.; Mineev, O.; Mine, S.; Missert, A.; Miura, M.; Moriyama, S.; Mueller, Th. A.; Murphy, S.; Myslik, J.; Nakadaira, T.; Nakahata, M.; Nakamura, K. G.; Nakamura, K.; Nakamura, K. D.; Nakayama, S.; Nakaya, T.; Nakayoshi, K.; Nantais, C.; Nielsen, C.; Nirkko, M.; Nishikawa, K.; Nishimura, Y.; Nowak, J.; O'Keeffe, H. M.; Ohta, R.; Okumura, K.; Okusawa, T.; Oryszczak, W.; Oser, S. M.; Ovsyannikova, T.; Owen, R. A.; Oyama, Y.; Palladino, V.; Palomino, J. L.; Paolone, V.; Payne, D.; Perkin, J. D.; Petrov, Y.; Pickard, L.; Pickering, L.; Pinzon Guerra, E. S.; Pistillo, C.; Popov, B.; Posiadala-Zezula, M.; Poutissou, J.-M.; Poutissou, R.; Przewlocki, P.; Quilain, B.; Radicioni, E.; Ratoff, P. N.; Ravonel, M.; Rayner, M. A. M.; Redij, A.; Reinherz-Aronis, E.; Riccio, C.; Rojas, P.; Rondio, E.; Roth, S.; Rubbia, A.; Rychter, A.; Sacco, R.; Sakashita, K.; Sánchez, F.; Sato, F.; Scantamburlo, E.; Scholberg, K.; Schoppmann, S.; Schwehr, J. D.; Scott, M.; Seiya, Y.; Sekiguchi, T.; Sekiya, H.; Sgalaberna, D.; Shah, R.; Shaikhiev, A.; Shaker, F.; Shaw, D.; Shiozawa, M.; Shirahige, T.; Short, S.; Smy, M.; Sobczyk, J. T.; Sorel, M.; Southwell, L.; Stamoulis, P.; Steinmann, J.; Stewart, T.; Suda, Y.; Suvorov, S.; Suzuki, A.; Suzuki, K.; Suzuki, S. Y.; Suzuki, Y.; Tacik, R.; Tada, M.; Takahashi, S.; Takeda, A.; Takeuchi, Y.; Tanaka, H. K.; Tanaka, H. A.; Terhorst, D.; Terri, R.; Thompson, L. F.; Tobayama, S.; Toki, W.; Tomura, T.; Touramanis, C.; Tsukamoto, T.; Tzanov, M.; Uchida, Y.; Vacheret, A.; Vagins, M.; Vallari, Z.; Vasseur, G.; Wachala, T.; Wakamatsu, K.; Walter, C. W.; Wark, D.; Warzycha, W.; Wascko, M. O.; Weber, A.; Wendell, R.; Wilkes, R. J.; Wilking, M. J.; Wilkinson, C.; Wilson, J. R.; Wilson, R. J.; Yamada, Y.; Yamamoto, K.; Yamamoto, M.; Yanagisawa, C.; Yano, T.; Yen, S.; Yershov, N.; Yokoyama, M.; Yoo, J.; Yoshida, K.; Yuan, T.; Yu, M.; Zalewska, A.; Zalipska, J.; Zambelli, L.; Zaremba, K.; Ziembicki, M.; Zimmerman, E. D.; Zito, M.; Żmuda, J.; T2K Collaboration

    2016-04-01

    We report a measurement of the νμ-nucleus inclusive charged-current cross section (=σc c ) on iron using data from the INGRID detector exposed to the J-PARC neutrino beam. The detector consists of 14 modules in total, which are spread over a range of off-axis angles from 0° to 1.1°. The variation in the neutrino energy spectrum as a function of the off-axis angle, combined with event topology information, is used to calculate this cross section as a function of neutrino energy. The cross section is measured to be σc c(1.1 GeV )=1.10 ±0.15 (1 0-38 cm2/nucleon) , σc c(2.0 GeV )=2.07 ±0.27 (1 0-38 cm2/nucleon) , and σc c(3.3 GeV )=2.29 ±0.45 (1 0-38 cm2/nucleon), at energies of 1.1, 2.0, and 3.3 GeV, respectively. These results are consistent with the cross section calculated by the neutrino interaction generators currently used by T2K. More importantly, the method described here opens up a new way to determine the energy dependence of neutrino-nucleus cross sections.

  17. Germanium nanowire growth controlled by surface diffusion effects

    SciTech Connect

    Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert; Teubner, Thomas; Boeck, Torsten; Fornari, Roberto

    2012-07-23

    Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

  18. Infrared absorption study of neutron-transmutation-doped germanium

    NASA Technical Reports Server (NTRS)

    Park, I. S.; Haller, E. E.

    1988-01-01

    Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

  19. Aqueous electrodeposition of Ge monolayers.

    PubMed

    Liang, Xuehai; Kim, Youn-Geun; Gebergziabiher, Daniel K; Stickney, John L

    2010-02-16

    The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

  20. Investigation into Methods to Improve Ion Source Life for Germanium Implantation

    NASA Astrophysics Data System (ADS)

    Sweeney, Joseph; Sergi, Steven; Tang, Ying; Byl, Oleg; Yedave, Sharad; Kaim, Robert; Bishop, Steve

    2011-01-01

    Germanium tetrafluoride has long been the standard dopant gas of choice for germanium implantation processes. While this material maintains several positive attributes (e.g., it is a nonflammable gas that is easily delivered to an ion source), its use can result in extremely short ion source lifetimes. This is especially the case for the situation when an ion implanter runs solely or predominantly GeF4. Presented here is an examination of various potential solutions to the short source life problem, some of which enable significant improvement.

  1. Microstructures of niobium-germanium alloys processed in inert gas in the 100 meter drop tube

    NASA Technical Reports Server (NTRS)

    Bayuzick, R. J.; Robinson, M. B.; Hofmeister, W. H.; Evans, N. D.

    1986-01-01

    The 100 meter drop tube at NASA's Marshall Space Flight Center has been used for a series of experiments with niobium-germanium alloys. These experiments were conducted with electromagnetic levitation melting in a 200 torr helium environment. Liquid alloys experienced large degrees of undercooling prior to solidification in the drop tube. Several interesting metastable structures were observed. However, the recalescence event prevented extended solid solubility of germanium in the A-15 beta phase. Liquids of eutectic composition were found to undercool in the presence of solid alpha and solid Nb5Ge3.

  2. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Motakef, S.; Vujisic, L. J.; Croell, A.; Dold, P.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have

  3. Applicability of the Ge(n,γ) Reaction for Estimating Thermal Neutron Flux

    NASA Astrophysics Data System (ADS)

    Nikolov, J.; Medić, Ž.; Jovančević, N.; Hansman, J.; Todorović, N.; Krmar, M.

    A simple experimental setup was used to measure gamma lines appearing in spectra after interactions of neutrons with Ge in the active volume of a high-purity germanium detector placed in a low-background shield. As source of neutrons a 252Cf spontaneous fission source and different thicknesses of PVC plates were used to slow down neutrons. A cadmiumenvelope was placed over the detector dipstick to identify the effect from slow and fast neutrons. Intensities of several characteristic γ-lines were measured, including intensity of the 139.9 keV γ-line from the reaction 74Ge(n,γ)75mGe, usually used for estimation of thermal neutron flux. Obtained results signify that only a part of the detected 139.9 keV γ-rays originate from thermal neutron capture. Some preliminary results indicate that in our detection setup thermal neutron capture contributes with 30% to 50% to the total intensity of the 139.9 keV γ-line, depending on the thickness of the PVC plates.

  4. The ternary germanides UMnGe and U2Mn3Ge

    NASA Astrophysics Data System (ADS)

    Hoffmann, Rolf-Dieter; Pöttgen, Rainer; Chevalier, Bernard; Gaudin, Etienne; Matar, Samir F.

    2013-07-01

    The title compounds were prepared by induction levitation melting of the elemental components and subsequent annealing. UMnGe (Pnma, a = 686.12(9), b = 425.49(6) and c = 736.5(1) pm) adopts the orthorhombic structure of TiNiSi and U2Mn3Ge (P63/mmc, a = 524.3(2) and c = 799.2(3) pm) possesses the hexagonal Mg2Cu3Si-type structure (ordered variant of the hexagonal Laves phase MgZn2). Both structures were refined from X-ray powder data to residuals of RI = 0.021 and 0.014 for UMnGe and U2Mn3Ge, respectively. The manganese and germanium atoms in UMnGe build up a three-dimensional [MnGe] network of ordered Mn3Ge3 hexagons with Mn-Ge distances ranging from 248 to 259 pm. The uranium atoms are coordinated by two tilted Mn3Ge3 hexagons. The manganese atoms in U2Mn3Ge build up Kagomé networks with 252 and 272 pm Mn-Mn distances which are connected via the germanium atoms (254 pm Mn-Ge) to a three-dimensional network. A remarkable feature of the U2Mn3Ge structure is a short U-U distance of 278 pm between adjacent cavities of the [Mn3Ge] network. From DFT based electronic structure calculations both germanides are found more cohesive than the Laves phase UMn2, thus underpinning the substantial role of Mn-Ge bonding. Calculations for both germanides show ferrimagnetic ground states with antiparallel spin alignments between U and Mn. The valence bands show bonding characteristics for interactions of atoms of different chemical natures and significant Mn-Mn bonding in U2Mn3Ge. Preliminary investigation of UMnGe by magnetization measurements confirms an antiferromagnetic arrangement below TN = 240 K.

  5. The influence of phosphorus nutritional status on the uptake of germanium in Panicum miliaceum and Brassica alba

    NASA Astrophysics Data System (ADS)

    Kaden, Ute Susanne; Székely, Balázs; Wiche, Oliver

    2015-04-01

    In order to investigate the influence of the phosphorus nutritional status on the uptake of germanium (Ge) in biomass two species, white millet (Panicum miliaceum) and white mustard (Brassica alba) were grown and sampled in a greenhouse experiment. The cultivation took place on two different substrates. The plants were fertilized with different nutrient solutions which differed in their phosphate content, and artificial addition of Ge was held via the casting solution. During the test period, measurements of the pH value, electric conductivity, and phosphate content of the soil solution were conducted. To transfer germanium from soil and plant material in solution, melting and microwave digestion processes were done. The experiment showed that in both species the additional Ge supply also leads to an increasing germanium content in the aboveground plant material. The two species, however, behave differently in response to this Ge supply. Panicum miliaceum accumulates Ge in the above-ground parts of plants stem, leaf and fruit to a much greater extent than Brassica alba. On the other hand the Ge accumulation in the roots of both B. alba and P. miliaceum was very high. In case of B. alba the root content was found by far higher as compared to the other parts of the plant. The addition of phosphate in the system changes the behavior. Without additional Ge its natural uptake from soil decreases in both species but in B. alba it is more characteristic. Increasing Ge supply (for both species) leads to an increased Ge uptake, until it reaches a maximum, regardless of the presence of phosphate addition. Phosphate, on the other hand, has positive effects on Ge uptake only in the case of B. alba roots, and to a limited extent in roots of P. miliaceum. In addition, for Panicum miliaceum an increase of germanium mainly in the underground parts was achieved. A further addition of phosphate did not have a positive effect on a greater enrichment of germanium. Whereas in Brassica

  6. Optical transparency of crystalline germanium

    NASA Astrophysics Data System (ADS)

    Kaplunov, I. A.; Smirnov, Yu. M.; Kolesnikov, A. I.

    2005-02-01

    This paper discusses the optical transparency of single-crystal and polycrystalline germanium. It is shown that the attenuation of IR radiation is affected by the presence of impurities (their form and concentration) and the structure of the material. The temperature dependences of the attenuation factor are obtained.

  7. Magnetic Microcalorimeter Gamma Detectors for High-Precision Non-Destructive Analysis, FY14 Extended Annual Report

    SciTech Connect

    Friedrich, S.

    2015-02-06

    Cryogenic gamma (γ) detectors with operating temperatures of ~0.1 K or below offer 10× better energy resolution than conventional high-purity germanium detectors that are currently used for non-destructive analysis (NDA) of nuclear materials. This can greatly increase the accuracy of NDA, especially at low-energies where gamma rays often have similar energies and cannot be resolved by Ge detectors. We are developing cryogenic γ–detectors based on metallic magnetic calorimeters (MMCs), which have the potential of higher resolution, faster count rates and better linearity than other cryogenic detector technologies. High linearity is essential to add spectra from different pixels in detector arrays that are needed for high sensitivity. Here we discuss the fabrication of a new generation of MMC γ–detectors in FY2014, and the resulting improvements in energy resolution and linearity of the new design. As an example of the type of NDA that cryogenic detectors enable, we demonstrate the direct detection of Pu-242 emissions with our MMC γ–detectors in the presence of Pu-240, and show that a quantitative NDA analysis agrees with the mass spectrometry

  8. Germanium-catalyzed growth of single-crystal GaN nanowires

    NASA Astrophysics Data System (ADS)

    Saleem, Umar; Wang, Hong; Peyrot, David; Olivier, Aurélien; Zhang, Jun; Coquet, Philippe; Ng, Serene Lay Geok

    2016-04-01

    We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor-Liquid-Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.

  9. Structural, elastic and thermodynamic properties of the tetragonal structure of germanium carbonitride

    NASA Astrophysics Data System (ADS)

    Xing, Mengjiang; Li, Binhua; Yu, Zhengtao; Chen, Qi

    2016-04-01

    The structural, mechanical, electronic and thermodynamic properties of the tetragonal structure germanium carbonitride (t-GeCN) were first investigated using the density function theory with the ultrasoft psedopotential scheme in the frame of the generalized gradient approximation and the local density approximation. The elastic constants have confirmed that the t-GeCN is mechanically stable and phonon spectra have confirmed that the t-GeCN is dynamically stable. The anisotropy studies show that t-GeCN exhibits a larger anisotropy in its Poisson's ratio, Young's modulus, shear modulus, sound velocities and universal elastic anisotropy index. Electronic structure study shows that t-GeCN is an indirect semiconductor with band gap of 0.628 eV. The thermodynamic properties of t-GeCN, including Debye temperature, heat capacity, Grüneisen parameter and thermal expansion coefficient are investigated utilizing the quasi-harmonic Debye model.

  10. Stable functionalization of germanium surface and its application in biomolecules immobilization

    NASA Astrophysics Data System (ADS)

    Cai, Qi; Xu, Baojian; Ye, Lin; Tang, Teng; Huang, Shanluo; Du, Xiaowei; Bian, Xiaojun; Zhang, Jishen; Di, Zengfeng; Jin, Qinghui; Zhao, Jianlong

    2014-10-01

    As a typical semiconductor material, germanium (Ge) has the potential to be utilized in microelectronics and bioelectronics. Herein, we present a simple and effective method to immobilize biomolecules on the surface of functionalized Ge. The surface oxide of Ge was removed with the pretreatment of hydrochloric acid and the Cl-terminated Ge reacted with 11-Mercaptoundecanoic acid (11-MUA). The surface of Ge was coated with 11-MUA self-assembled monolayers (SAMs) due to the bonding reaction between the sulfhydryl group of 11-MUA and Cl-terminated Ge. Furthermore, typical biomolecule, a green fluorescent protein was chosen to be immobilized on the surface of the functionalized Ge. Contact angle analysis, atomic force microscopy and X-ray photoelectron spectroscopy were used to study the characteristics including wettability, stability, roughness and component of the functionalized Ge, respectively. Fluorescence microscopy was utilized to indicate the efficiency of protein immobilization on the surface of the functionalized Ge. With these studies, stable and uniform functionalized monolayer was obtained on the surface of Ge after 11-MUA treatment and the functionalized Ge was effectively applied in protein immobilization. Furthermore, this study may pave the way for further applications such as the integration of bioelectronics and biosensors with the attractive semiconductor material-Ge in future work.

  11. Stability and exfoliation of germanane: a germanium graphane analogue.

    PubMed

    Bianco, Elisabeth; Butler, Sheneve; Jiang, Shishi; Restrepo, Oscar D; Windl, Wolfgang; Goldberger, Joshua E

    2013-05-28

    Graphene's success has shown not only that it is possible to create stable, single-atom-thick sheets from a crystalline solid but that these materials have fundamentally different properties than the parent material. We have synthesized for the first time, millimeter-scale crystals of a hydrogen-terminated germanium multilayered graphane analogue (germanane, GeH) from the topochemical deintercalation of CaGe2. This layered van der Waals solid is analogous to multilayered graphane (CH). The surface layer of GeH only slowly oxidizes in air over the span of 5 months, while the underlying layers are resilient to oxidation based on X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements. The GeH is thermally stable up to 75 °C; however, above this temperature amorphization and dehydrogenation begin to occur. These sheets can be mechanically exfoliated as single and few layers onto SiO2/Si surfaces. This material represents a new class of covalently terminated graphane analogues and has great potential for a wide range of optoelectronic and sensing applications, especially since theory predicts a direct band gap of 1.53 eV and an electron mobility ca. five times higher than that of bulk Ge.

  12. Bending-induced Symmetry Breaking of Lithiation in Germanium Nanowires

    SciTech Connect

    Gu, Meng; Yang, Hui; Perea, Daniel E.; Zhang, Jiguang; Zhang, Sulin; Wang, Chong M.

    2014-08-01

    From signal transduction of living cells to oxidation and corrosion of metals, mechanical stress intimately couples with chemical reactions, regulating these biological and physiochemical processes. The coupled effect is particularly evident in electrochemical lithiation/delithiation cycling of high-capacity electrodes, such as silicon (Si), where on one hand lithiation-generated stress mediates lithiation kinetics, and on the other electrochemical reaction rate regulates stress generation and mechanical failure of the electrodes. Here we report for the first time the evidence on the controlled lithiation in germanium nanowires (GeNWs) through external bending. Contrary to the symmetric core-shell lithiation in free-standing GeNWs, we show bending GeNWs breaks the lithiation symmetry, speeding up lithaition at the tensile side while slowing down at the compressive side of the GeNWs. The bending-induced symmetry breaking of lithiation in GeNWs is further corroborated by chemomechanical modeling. In the light of the coupled effect between lithiation kinetics and mechanical stress in the electrochemical cycling, our findings shed light on strain/stress engineering of durable high-rate electrodes and energy harvesting through mechanical motion.

  13. Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Sanchez Perez, Jose Roberto

    Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant

  14. Noise performance of high-efficiency germanium quantum dot photodetectors

    NASA Astrophysics Data System (ADS)

    Siontas, Stylianos; Liu, Pei; Zaslavsky, Alexander; Pacifici, Domenico

    2016-08-01

    We report on the noise analysis of high performance germanium quantum dot (Ge QD) photodetectors with responsivity up to ˜2 A/W and internal quantum efficiency up to ˜400%, over the 400-1100 nm wavelength range and at a reverse bias of -10 V. Photolithography was performed to define variable active-area devices that show suppressed dark current, leading to a higher signal-to-noise ratio, up to 105, and specific detectivity D * ≃ 6 × 10 12 cm Hz 1 / 2 W-1. These figures of merit suggest Ge QDs as a promising alternative material for high-performance photodetectors working in the visible to near-infrared spectral range.

  15. Giant pop-ins and amorphization in germanium during indentation

    NASA Astrophysics Data System (ADS)

    Oliver, David J.; Bradby, Jodie E.; Williams, Jim S.; Swain, Michael V.; Munroe, Paul

    2007-02-01

    Sudden excursions of unusually large magnitude (>1 μm), "giant pop-ins," have been observed in the force-displacement curve for high load indentation of crystalline germanium (Ge). A range of techniques including Raman microspectroscopy, focused ion-beam cross sectioning, and transmission electron microscopy, are applied to study this phenomenon. Amorphous material is observed in residual indents following the giant pop-in. The giant pop-in is shown to be a material removal event, triggered by the development of shallow lateral cracks adjacent to the indent. Enhanced depth recovery, or "elbowing," observed in the force-displacement curve following the giant pop-in is explained in terms of a compliant response of plates of material around the indent detached by lateral cracking. The possible causes of amorphization are discussed, and the implications in light of earlier indentation studies of Ge are considered.

  16. Young’s modulus of [111] germanium nanowires

    SciTech Connect

    Maksud, M.; Yoo, J.; Harris, C. T.; Palapati, N. K. R.; Subramanian, A.

    2015-11-02

    Our paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ~75%. Furthermore, with increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  17. Young’s modulus of [111] germanium nanowires

    SciTech Connect

    Maksud, M.; Palapati, N. K. R.; Subramanian, A.; Yoo, J.; Harris, C. T.

    2015-11-01

    This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  18. σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes

    PubMed Central

    Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph

    2014-01-01

    In order to evaluate the influence of germanium atoms in oligo- and polysilanes, a number of oligosilane compounds were prepared where two or more silicon atoms were replaced by germanium. While it can be expected that the structural features of thus altered molecules do not change much, the more interesting question is, whether this modification would have a profound influence on the electronic structure, in particular on the property of σ-bond electron delocalization. The UV-spectroscopic comparison of the oligosilanes with germanium enriched oligosilanes and also with oligogermanes showed a remarkable uniform picture. The expected bathochromic shift for oligogermanes and Ge-enriched oligosilanes was observed but its extent was very small. For the low energy absorption band the bathochromic shift from a hexasilane chain (256 nm) to a hexagermane chain with identical substituent patterns (259 nm) amounts to a mere 3 nm. PMID:25431502

  19. Chromatographic separation of germanium and arsenic for the production of high purity (77)As.

    PubMed

    Gott, Matthew D; DeGraffenreid, Anthony J; Feng, Yutian; Phipps, Michael D; Wycoff, Donald E; Embree, Mary F; Cutler, Cathy S; Ketring, Alan R; Jurisson, Silvia S

    2016-04-01

    A simple column chromatographic method was developed to isolate (77)As (94±6% (EtOH/HCl); 74±11 (MeOH)) from germanium for potential use in radioimmunotherapy. The separation of arsenic from germanium was based on their relative affinities for different chromatographic materials in aqueous and organic environments. Using an organic or mixed mobile phase, germanium was selectively retained on a silica gel column as germanate, while arsenic was eluted from the column as arsenate. Subsequently, enriched (76)Ge (98±2) was recovered for reuse by elution with aqueous solution (neutral to basic). Greater than 98% radiolabeling yield of a (77)As-trithiol was observed from methanol separated [(77)As]arsenate [17].

  20. Elasticity, anelasticity, and microplasticity of directionally crystallized aluminum-germanium alloys

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.; Fedorov, V. Yu.

    2014-07-01

    The structure, Young's modulus defect, and internal friction in aluminum-germanium alloys have been studied under conditions of longitudinal elastic vibrations with a strain amplitude in the range of 10-6-3 × 10-4 at frequencies about 100 kHz. The ribbon-shaped samples of the alloys with the germanium content from 35 to 64 wt % have been produced by drawing from the melt by the Stepanov method at a rate of 0.1 mm/s. It has been shown that the dependences of the Young's modulus defect, logarithmic decrement, and vibration stress amplitude on the germanium content in the alloy at a constant strain amplitude have an extremum at 53 wt % Ge. This composition corresponds to the eutectic composition. The dependences of the Young's modulus defect, the decrement, and vibration stress amplitude at a constant microstrain amplitude have been explained by the vibrational displacements of dislocations, which depend on the alloy structure.

  1. Facile synthesis of multifunctional germanium nanoparticles as a carrier of quercetin to achieve enhanced biological activity.

    PubMed

    Guo, Yan-Jie; Yang, Fen; Zhang, Lu; Pi, Jiang; Cai, Ji-Ye; Yang, Pei-Hui

    2014-08-01

    A simple method for preparing quercetin surface-functionalized germanium nanoparticles (Qu-GeNPs) with enhanced antioxidant and anticancer activity is reported. Spherical germanium nanoparticles (GeNPs) were capped by quercetin (Qu) with a mean particle size of approximately 33 nm and were characterized by TEM, AFM, UV-visible absorption spectroscopy, FTIR, and XRD measurements. The in vitro drug release of Qu from the Qu-GeNPs indicated that Qu could principally be distributed around tumor tissues rather than in the normal section and Qu-GeNPs were internalized by MCF-7 cells. Their biological activity test results indicated that these Qu-GeNPs possessed stronger hydroxyl-scavenging effects and proliferative inhibition effect on MCF-7 cancer cells than quercetin, thus suggesting that the strategy to use GeNPs as a carrier of Qu could be an efficient way to achieve enhanced antioxidant and anticancer activity. In addition, Qu-GeNPs possessed a high apoptotic induction effect in cancer cells, especially in high dosages, and could arrest MCF-7 cells in the S phase.

  2. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V.; Averyanov, D. V.; Vasil’evskii, I. S.

    2015-01-15

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

  3. An estimate of the Germanium isotopic composition of the Ocean.

    NASA Astrophysics Data System (ADS)

    Galy, A.; Rouxel, O.; Mantoura, S.; Elderfield, H.; de La Rocha, C.

    2004-12-01

    Ge is a trace element in seawater whose biogeochemistry is dominated by its Si-like behaviour. Its residence time is poorly constrained but could be close to the mixing time of the ocean. In addition, hydrothermal vents are enriched in Ge (relative to Si) and this excess has been witnessed in the water column. Moreover, Si isotopic variations have been reported in the ocean, related to the precipitation of biogenic opal, while the Si residence time is slightly higher than the Ge residence time. Therefore, variations in the isotopic composition of dissolved Ge in the ocean are expected provided that at least one of the major input or output of Ge has a different isotopic composition. Given the low Ge concentration (around 40 picomol/kg) and the state-of-the art analytical facilities, a direct measurement of the isotopic composition of the seawater is barely conceivable. The major input of Ge into the ocean are the rivers and the hydrothermal vents, while the removal of Ge occurs through the precipitation of biogenic opal and the early diagenesis of passive margins. The mechanism of the later is, however, not well established but could be related to the precipitation of Fe-oxyhydroxide. So the measurement of marine authigenic minerals, biogenic silica and the comparison with an estimate of the bulk silicate Earth (BSE) composition will give some constraints on the Germanium isotopic composition of the ocean. A new technique for the precise and accurate determination of Ge stable isotope compositions has been developed and applied to silicate, sulfide, and biogenic material. The analyses were performed using a continuous flow hydride generation system coupled to a Nu Instrument MC-ICPMS. Samples have been purified through anion and cation exchange resins to separate Ge from matrix elements and potential interferences. Deep sea clays have a similar isotopic composition that MORBs or granites, suggesting that isotopic composition of the dissolved Ge in rivers might not

  4. Germanium as an integrated resistor material in RF MEMS switches

    NASA Astrophysics Data System (ADS)

    Grenier, K.; Bordas, C.; Pinaud, S.; Salvagnac, L.; Dubuc, D.

    2007-05-01

    This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS switches, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a great electrical characteristic with a very high resistivity value. This property is particularly interesting for the elaboration of integrated resistors for RF components as it assures miniaturised resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in the entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors, without any RF perturbations.

  5. Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

    SciTech Connect

    Lim, Phyllis S. Y.; Yeo, Yee-Chia; Chi, Dong Zhi; Lim, Poh Chong; Wang, Xin Cai; Chan, Taw Kuei; Osipowicz, Thomas

    2010-11-01

    Epitaxial nickel digermanide (NiGe{sub 2}), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe{sub 2} formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and first-principles calculations. The formation mechanism of NiGe{sub 2} is discussed and is attributed to both the reduced interfacial energy at the NiGe{sub 2}/Ge(100) interface and the kinetic aspects of the laser annealing reaction associated with phase transformation and film agglomeration.

  6. Novel Germanium/Polypyrrole Composite for High Power Lithium-ion Batteries

    PubMed Central

    Gao, Xuanwen; Luo, Wenbin; Zhong, Chao; Wexler, David; Chou, Shu-Lei; Liu, Hua-Kun; Shi, Zhicong; Chen, Guohua; Ozawa, Kiyoshi; Wang, Jia-Zhao

    2014-01-01

    Nano-Germanium/polypyrrole composite has been synthesized by chemical reduction method in aqueous solution. The Ge nanoparticles were directly coated on the surface of the polypyrrole. The morphology and structural properties of samples were determined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Thermogravimetric analysis was carried out to determine the polypyrrole content. The electrochemical properties of the samples have been investigated and their suitability as anode materials for the lithium-ion battery was examined. The discharge capacity of the Ge nanoparticles calculated in the Ge-polypyrrole composite is 1014 mAh g−1 after 50 cycles at 0.2 C rate, which is much higher than that of pristine germanium (439 mAh g−1). The composite also demonstrates high specific discharge capacities at different current rates (1318, 1032, 661, and 460 mAh g−1 at 0.5, 1.0, 2.0, and 4.0 C, respectively). The superior electrochemical performance of Ge-polypyrrole composite could be attributed to the polypyrrole core, which provides an efficient transport pathway for electrons. SEM images of the electrodes have demonstrated that polypyrrole can also act as a conductive binder and alleviate the pulverization of electrode caused by the huge volume changes of the nanosized germanium particles during Li+ intercalation/de-intercalation. PMID:25168783

  7. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium.

    PubMed

    Sigillito, A J; Jock, R M; Tyryshkin, A M; Beeman, J W; Haller, E E; Itoh, K M; Lyon, S A

    2015-12-11

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T_{2}) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T_{2}'s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T_{2} and the spin-lattice relaxation (T_{1}) times for ^{75}As and ^{31}P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to ^{73}Ge nuclear spins limits the coherence in samples with significant amounts of ^{73}Ge. For the most highly enriched samples, we find that T_{1} limits T_{2} to T_{2}=2T_{1}. We report an anisotropy in T_{1} and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T_{2} in samples with ^{73}Ge. PMID:26705654

  8. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

    NASA Astrophysics Data System (ADS)

    Sigillito, A. J.; Jock, R. M.; Tyryshkin, A. M.; Beeman, J. W.; Haller, E. E.; Itoh, K. M.; Lyon, S. A.

    2015-12-01

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2 ) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T2's while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T2 and the spin-lattice relaxation (T1) times for 75As and 31P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73Ge nuclear spins limits the coherence in samples with significant amounts of 73Ge. For the most highly enriched samples, we find that T1 limits T2 to T2=2 T1. We report an anisotropy in T1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2 in samples with 73Ge.

  9. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect

    Geiger, R. E-mail: hans.sigg@psi.ch; Sigg, H. E-mail: hans.sigg@psi.ch; Frigerio, J.; Chrastina, D.; Isella, G.; Süess, M. J.; Spolenak, R.; Faist, J.

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  10. In situ encapsulation of germanium clusters in carbon nanofibers: high-performance anodes for lithium-ion batteries.

    PubMed

    Wang, Wei; Xiao, Ying; Wang, Xia; Liu, Bing; Cao, Minhua

    2014-10-01

    Alloyed anode materials for lithium-ion batteries (LIBs) usually suffer from considerable capacity losses during charge-discharge process. Herein, in situ-grown germanium clusters are homogeneously encapsulated into porous nitrogen-doped carbon nanofibers (N-CNFs) to form Ge/N-CNFs hybrids, using a facile electrospinning method followed by thermal treatment. When used as anode in LIBs, the Ge/N-CNFs hybrids exhibit excellent lithium storage performance in terms of specific capacity, cycling stability, and rate capability. The excellent electrochemical properties can be attributed to the unique structural features: the distribution of the germanium clusters, porous carbon nanofibers, and GeN chemical bonds all contribute to alleviating the large volume changes of germanium during the discharge-charge process, while at same time the unique porous N-CNFs not only increase the contact area between the electrode and the electrolyte, but also the conductivity of the hybrid.

  11. Calibration of Germanium Resistance Thermometers

    NASA Technical Reports Server (NTRS)

    Ladner, D.; Urban, E.; Mason, F. C.

    1987-01-01

    Largely completed thermometer-calibration cryostat and probe allows six germanium resistance thermometers to be calibrated at one time at superfluid-helium temperatures. In experiments involving several such thermometers, use of this calibration apparatus results in substantial cost savings. Cryostat maintains temperature less than 2.17 K through controlled evaporation and removal of liquid helium from Dewar. Probe holds thermometers to be calibrated and applies small amount of heat as needed to maintain precise temperature below 2.17 K.

  12. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Guberman, David

    2010-01-01

    The article provides information on germanium, an element with electrical properties between those of a metal and an insulator. Applications of germanium include its use as a component of the glass in fiber-optic cable, in infrared optics devices and as a semiconductor and substrate used in electronic and solar applications. Germanium was first isolated by German chemist Clemens Winkler in 1886 and was named after Winkler's native country. In 2008, the leading sources of primary germanium from coal or zinc include Canada, China and Russia.

  13. Germanium recycling in the United States in 2000

    USGS Publications Warehouse

    Jorgenson, John D.

    2006-01-01

    This report describes the recycling flow of germanium in the United States in 2000, as well as other germanium material flow streams. Germanium was recycled mostly from new scrap that was generated during the manufacture of germanium-containing fiber optic cables and from new and old scrap products of germanium-containing infrared imaging devices. In 2000, about 11.5 metric tons of germanium was recycled, about 40 percent of which was derived from old scrap. The germanium recycling rate was estimated to be 50 percent, and germanium scrap recycling efficiency, 76 percent.

  14. Intrinsically germanium-69-labeled iron oxide nanoparticles: synthesis and in-vivo dual-modality PET/MR imaging.

    PubMed

    Chakravarty, Rubel; Valdovinos, Hector F; Chen, Feng; Lewis, Christina M; Ellison, Paul A; Luo, Haiming; Meyerand, M Elizabeth; Nickles, Robert J; Cai, Weibo

    2014-08-13

    Intrinsically germanium-69-labeled super-paramagnetic iron oxide nanoparticles are synthesized via a newly developed, fast and highly specific chelator-free approach. The biodistribution pattern and the feasibility of (69) Ge-SPION@PEG for in vivo dual-modality positron emission tomography/magnetic resonance (PET/MR) imaging and lymph-node mapping are investigated, which represents the first example of the successful utilization of a (69) Ge-based agent for PET/MR imaging.

  15. Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

    SciTech Connect

    Meaudre, M.; Gueunier-Farret, M.E.; Meaudre, R.; Kleider, J.P.; Vignoli, S.; Canut, B.

    2005-08-01

    Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si{sub 1-x}Ge{sub x}:H. Studies of space-charge-limited currents and space-charge relaxation allow to get information on midgap states originating from Ge. It is observed that the electron-capture cross section of states at the Fermi level increases linearly with their concentration. This is supported by modulated photocurrent experiments. Finally, it is shown that the variations of both the Ge dangling bond concentration and their electron-capture cross section with Ge content account for the photoresponse in these materials.

  16. A novel tip-induced local electrical decomposition method for thin GeO films nanostructuring.

    PubMed

    Sheglov, D V; Gorokhov, E B; Volodin, V A; Astankova, K N; Latyshev, A V

    2008-06-18

    Decomposition of germanium monoxide (GeO) films under the impact of an atomic force microscope (AFM) tip was observed for the first time. It is known that GeO is metastable in the solid phase and decomposes into Ge and GeO(2) under thermal annealing or radiation impact. AFM tip treatments allow us to carry out local decomposition. A novel tip-induced local electrical decomposition (TILED) method of metastable GeO films has been developed. Using TILED of 10 nm thin GeO film, Ge nanowires on silicon substrates were obtained.

  17. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    PubMed Central

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  18. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    NASA Astrophysics Data System (ADS)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  19. BaTiO3 integration with nanostructured epitaxial (100), (110), and (111) germanium for multifunctional devices.

    PubMed

    Hudait, Mantu K; Zhu, Yan; Jain, Nikhil; Maurya, Deepam; Zhou, Yuan; Varghese, Ron; Priya, Shashank

    2013-11-13

    Ferroelectric-germanium heterostructures have a strong potential for multifunctional devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while ferroelectric BaTiO3 is promising due to its high relative permittivity, which can make next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. Here, we investigate the growth, structural, chemical, and band alignment properties of pulsed laser deposited BaTiO3 on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Cross-sectional transmission electron microscopy micrographs show the amorphous nature of the BaTiO3 layer and also show a sharp heterointerface between BaTiO3 and Ge. The appearance of strong Pendellösung oscillation fringes from high-resolution X-ray diffraction implies the presence of parallel and sharp heterointerfaces. The valence band offset relation of ΔEV(100) ≥ ΔEV(111) > ΔEV(110) and the conduction band offset relation of ΔE(C)(110) > ΔE(C)(111) ≥ ΔE(C)(100) on crystallographically oriented Ge offer significant advancement for designing new-generation ferroelectric-germanium-based multifunctional devices.

  20. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    SciTech Connect

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-14

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  1. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Li, Lingzi; Tok, Eng Soon; Yeo, Yee-Chia

    2015-06-01

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge0.83Sn0.17-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge0.83Sn0.17) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge0.83Sn0.17 during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge0.83Sn0.17 layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal ⟨100⟩ azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge0.83Sn0.17 thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (Ec) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to "cellular precipitation." This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  2. Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

    NASA Astrophysics Data System (ADS)

    Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

    2012-06-01

    Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

  3. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    SciTech Connect

    Rowe, David J. E-mail: kortshagen@umn.edu; Kortshagen, Uwe R. E-mail: kortshagen@umn.edu

    2014-02-01

    Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1−x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  4. On the origin of anisotropic lithiation in crystalline silicon over germanium: A first principles study

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Yun; Hwang, Gyeong S.

    2014-12-01

    Silicon (Si) and germanium (Ge) are both recognized as a promising anode material for high-energy lithium-ion batteries. Si is abundant and best known for its superior gravimetric energy storage capacity, while Ge exhibits faster charge/discharge rates and better capacity retention. Recently, it was discovered that Si lithiation exhibits strong orientation dependence while Ge lithiation proceeds isotropically, although they have the same crystalline structure. To better understand the underlying reasons behind these distinctive differences, we examine and compare the lithiation behaviors at the Li4Si/c-Si(1 1 0) and Li4Ge/c-Ge(1 1 0) model systems using ab initio molecular dynamics simulations. In comparison to lithiated c-Si, where a sharp amorphous-crystalline interface remains and advances rather slowly, lithiated c-Ge tends to loose its crystallinity rapidly, resulting in a graded lithiation front of fast propagation speed. Analysis of the elastic responses and dynamics of the host Si and Ge lattices clearly demonstrate that from the beginning of the lithiation process, Ge lattice responds with more significant weakening as compared to the rigid Si lattice. Moreover, the more flexible Ge lattice is found to undergo facile atomic rearrangements during lithiation, overshadowing the original crystallographic characteristic. These unique properties of Ge thereby contribute synergistically to the rapid and isotropic lithiation.

  5. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Jorgenson, John D.

    2003-01-01

    Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

  6. High efficiency germanium-assisted grating coupler.

    PubMed

    Yang, Shuyu; Zhang, Yi; Baehr-Jones, Tom; Hochberg, Michael

    2014-12-15

    We propose a fiber to submicron silicon waveguide vertical coupler utilizing germanium-on-silicon gratings. The germanium is epitaxially grown on silicon in the same step for building photodetectors. Coupling efficiency based on FDTD simulation is 76% at 1.55 µm and the optical 1dB bandwidth is 40 nm.

  7. Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

    NASA Technical Reports Server (NTRS)

    Haller, E. E.; Itoh, K. M.; Beeman, J. W.

    1996-01-01

    Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

  8. Synthesis of Silicon and Germanium Containing Heteroaromatic Sulfides as Cholesterol Level Lowering and Vasodilating Agents

    PubMed Central

    Rubina, Kira; Abele, Edgars; Arsenyan, Pavel; Abele, Ramona; Veveris, Maris

    2001-01-01

    Silicon and germanium containing heteroaromatic sulfides have been prepared using phase transfer catalytic (PTC) system thiol / Si or Ge containing alkyl halide / solid KOH / 18- crown-6 / toluene. The target sulfides were isolated in yields up to 92 %. It has been found that 2-{[dimethyl (β-triethylgermylethyl)-silylmethyl]thio}-1-methylimidazole and 2-{[dimethyl(β-triphenylsilylethyl) silyl-methyl]thio}benzothiazole are the most active cholesterol level lowering and vasodilating agents. PMID:18475980

  9. Germanium Lift-Off Masks for Thin Metal Film Patterning

    NASA Technical Reports Server (NTRS)

    Brown, Ari

    2012-01-01

    A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

  10. Germanium anode with excellent lithium storage performance in a germanium/lithium-cobalt oxide lithium-ion battery.

    PubMed

    Li, Xiuwan; Yang, Zhibo; Fu, Yujun; Qiao, Li; Li, Dan; Yue, Hongwei; He, Deyan

    2015-02-24

    Germanium is a highly promising anode material for lithium-ion batteries as a consequence of its large theoretical specific capacity, good electrical conductivity, and fast lithium ion diffusivity. In this work, Co3O4 nanowire array fabricated on nickel foam was designed as a nanostructured current collector for Ge anode. By limiting the voltage cutoff window in an appropriate range, the obtained Ge anode exhibits excellent lithium storage performance in half- and full-cells, which can be mainly attributed to the designed nanostructured current collector with good conductivity, enough buffering space for the volume change, and shortened ionic transport length. More importantly, the assembled Ge/LiCoO2 full-cell shows a high energy density of 475 Wh/kg and a high power density of 6587 W/kg. A high capacity of 1184 mA h g(-1) for Ge anode was maintained at a current density of 5000 mA g(-1) after 150 cycles.

  11. Black Germanium fabricated by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

  12. Electronic processes in uniaxially stressed p-type germanium

    SciTech Connect

    Dubon, O.D. Jr.

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  13. Nanoscale morphology and photoemission of arsenic implanted germanium films

    NASA Astrophysics Data System (ADS)

    Petö, G.; Khanh, N. Q.; Horváth, Z. E.; Molnár, G.; Gyulai, J.; Kótai, E.; Guczi, L.; Frey, L.

    2006-04-01

    Germanium films of 140 nm thickness deposited onto Si substrate were implanted with 70 keV arsenic ions with a dose of 2.5×1014 cm-2. The morphology of the implanted films was determined by Rutherford backscattering and cross-sectional transmission electron microscopy. Concentration of oxygen and carbon impurities and their distribution in the implanted layer were detected by secondary-ion-mass spectroscopy and nuclear reaction analysis using the O16(He4,He4)O16 reaction. The depth dependence of the valence band density of states was investigated by measuring the energy distribution curve of photoelectrons using Ar ion etching for profiling. The morphology of As implanted film was dominated by nanosized (10-100 nm) Ge islands separated by empty bubbles at a depth of 20-50 nm under the surface. At depth ranges of 0-20 and 70 to a measured depth of 140 nm, however, morphology of the as-evaporated Ge film was not modified. At a depth of 20-50 nm, photoelectron spectra were similar to those obtained for Ge amorphized with heavy ion (Sb) implantation [implantation induced (I.I.) a-Ge]. The depth profile of the morphology and the photoemission data indicate correlation between the morphology and valence band density of states of the ion I.I. a-Ge. As this regime was formed deep in the evaporated film, i.e., isolated from the environment, any contamination, etc., effect can be excluded. The depth distribution of this I.I. a-Ge layer shows that the atomic displacement process cannot account for its formation.

  14. Contribution of the electron-phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications

    NASA Astrophysics Data System (ADS)

    Lazanu, Ionel; Lazanu, Sorina

    2016-02-01

    The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron-phonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model.

  15. Hydrogen concentration and distribution in high-purity germanium crystals

    SciTech Connect

    Hansen, W.L.; Haller, E.E.; Luke, P.N.

    1981-10-01

    High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10/sup 15/cm/sup -3/ has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium ..beta..-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H/sub 2/ with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10/sup 7/ cm/sup -3/ and are estimated to contain 10/sup 8/ H atoms each.

  16. Erbium Doping Effects on the Conduction Band Edge in Germanium Nanocrystals

    SciTech Connect

    Meulenberg, Robert W.; Willey, Trevor M.; Lee, Jonathan R.; Terminello, Louis J.; Van Buren, T.

    2011-05-16

    We have produced erbium-doped germanium nanocrystals (NCs) using a new two cell physical vapor deposition system. Using element specific x-ray techniques (absorption and photoemission), we are able to probe the chemical environment of Er in the Ge NCs. Evidence for the optically active Er3+ state is seen at low Er concentrations, with a disruption of NC formation at high Er concentrations. The x-ray absorption measurements suggest that the Er occupies lattice sites near the surface of the NC. Analysis of the quantum confinement effect with Er doping suggests that the native quantum properties of the Ge NC are maintained at low Er concentrations.

  17. n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level

    NASA Astrophysics Data System (ADS)

    Scappucci, G.; Warschkow, O.; Capellini, G.; Klesse, W. M.; McKenzie, D. R.; Simmons, M. Y.

    2012-08-01

    To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH2+H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH2+H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.

  18. Synthesis and structural characterization of the new clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    DOE PAGESBeta

    Schafer, Marion; Bobev, Svilen

    2016-03-25

    This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. Furthermore, this and several other details of the crystal chemistry are elaborated.

  19. Inclusive D meson production with the Mark II detector at SPEAR. [3. 9 to 7. 4 GeV (c. m. )

    SciTech Connect

    Coles, M.W.

    1980-09-01

    Neutral and charged D meson production cross sections were measured at center-of-mass energies between 3.9 GeV and 7.4 GeV. The quantity R/sub D/(=(sigma/sub D/sup +/+D/sup -// + sigma/sub D/sup 0/+ anti D/sup 0//)/2 sigma/sub ..mu../sup +/..mu../sup -//) is equal to 2 at 4 GeV and 4.4 GeV and about equal to 1 elsewhere. R/sub D/ + 2.5 approximately equals R (sigma/sub hadrons//sigma/sub ..mu../sup +/..mu../sup -//) at all energies. The exclusive cross sections for e/sup +/e/sup -/ annihilation into D anti D, D* anti D, and D* anti D* were measured at center-of-mass energies between 3.9 GeV and 4.3 GeV. sigma/sub D* anti D*/ decreases with increasing center-of-mass energy from 6.6 +- 1.3 nb near 4 GeV to 3.6 +- .9 nb near 4.3 GeV. sigma/sub D* anti D/ also decreases from 4.2 +- .9 nb to 1.8 +- .6 nb over the same energy region. sigma/sub D anti D/ is less than 0.5 +- .3 nb at all energies. The branching fractions for D*/sup +/ and D* decay were measured. B/sub D*/sup 0/..-->..D/sup 0/..pi../sup 0// = 0.5 +- .09, B/sub D*/sup +/..-->..D/sup 0/..pi../sup +// = 0.44 +- .10, and B/sub D*/sup +/..-->..D/sup +/..pi../sup 0// = 0.31 +- .07. At 5.2 GeV, the D meson differential cross section is well described by phase space for e/sup +/e/sup -/ ..-->.. D anti D..pi pi.. or D* anti D*..pi pi... Sd sigma/dz was parameterized as A(1-z)/sup n/ with n = 0.9 +- .4. Quasi-two-body production accounts for less than 20% of the total D cross section. No evidence was found for associated charmed baryon-D meson production. An upper limit of 0.4 nb (90% confidence level) was determined for associated production. 41 figures, 12 tables.

  20. Electro-magnetic physics studies at RHIC: Neutral pion production, direct photon HBT, photon elliptic flow in gold-gold collisions at sqrt(s_NN) = 200 GeV and the Muon Telescope Detector simulation

    NASA Astrophysics Data System (ADS)

    Lin, Guoji

    Electro-magnetic (E&M) probes such as direct photons and muons (mu) are important tools to study the properties of the extremely hot and dense matter created in heavy ion collisions at the Relativistic Heavy Ion Collider (RHIC). In this thesis, several topics of E&M physics will be addressed, including neutral pion (pi0) production, direct photon HBT, and photon elliptic flow (v2) in Au+Au collisions at sNN = 200 GeV. A discussion on the simulation study of the new Muon Telescope Detector (MTD) will also be presented. The pi0 production is a fundamental measurement of hadron production and prerequisite for the background study of direct photons. Neutral pions are reconstructed using the photons detected by the STAR Barrel Electro-magnetic Calorimeter (BEMC) and the Time Projection Chamber (TPC). Spectra of pi 0 are measured at transverse momentum 1 < pT < 12 GeV/c near mid-rapidity (0 < eta < 0.8) in 200 GeV Au+Au collisions. The spectra and nuclear modification factors RCP and RAA are compared to earlier pi+/- and pi0 results. Direct photon Hanbury-Brown and Twiss (HBT) correlations can reveal information of the system size throughout the whole collision. A first attempt of direct photon HBT study at RHIC in 200 GeV Au+Au collisions is done using photons detected by the STAR BEMC and TPC. All unknown correlation at small Qinv is observed, whose magnitude is much larger than the expected HBT signal, and possible causes of the correlation will be discussed. Direct photon elliptic flow (v2) at intermediate to high pT is sensitive to the source of direct photon production. Results of inclusive photon v2 in 200 GeV Au+Au collisions are presented. The v2 of pi0 decay photons is calculated from the previously published pi results. The comparison between inclusive and decay photon v 2 indicates that direct photon v2 is small. A new large-area Muon Telescope Detector at mid-rapidity at RHIC is proposed and under investigation, using the Long-strip Multi-Gap Resistive Plate