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Sample records for germanium sulfides

  1. Naturally occurring vapor-liquid-solid (VLS) Whisker growth of germanium sulfide

    USGS Publications Warehouse

    Finkelman, R.B.; Larson, R.R.; Dwornik, E.J.

    1974-01-01

    The first naturally occurring terrestrial example of vapor-liquid-solid (VLS) growth has been observed in condensates from gases released by burning coal in culm banks. Scanning electron microscopy, X-ray diffraction, and energy dispersive analysis indicate that the crystals consist of elongated rods (??? 100 ??m) of germanium sulfide capped by bulbs depleted in germanium. ?? 1974.

  2. Synthesis of Silicon and Germanium Containing Heteroaromatic Sulfides as Cholesterol Level Lowering and Vasodilating Agents

    PubMed Central

    Rubina, Kira; Abele, Edgars; Arsenyan, Pavel; Abele, Ramona; Veveris, Maris

    2001-01-01

    Silicon and germanium containing heteroaromatic sulfides have been prepared using phase transfer catalytic (PTC) system thiol / Si or Ge containing alkyl halide / solid KOH / 18- crown-6 / toluene. The target sulfides were isolated in yields up to 92 %. It has been found that 2-{[dimethyl (β-triethylgermylethyl)-silylmethyl]thio}-1-methylimidazole and 2-{[dimethyl(β-triphenylsilylethyl) silyl-methyl]thio}benzothiazole are the most active cholesterol level lowering and vasodilating agents. PMID:18475980

  3. Germanium

    SciTech Connect

    Major-Sosias, M.A.

    1996-01-01

    Germanium is an important semiconductor material, or metalloid which, by definition, is a material whose electrical properties are halfway between those of metallic conductors and electrical insulators. This paper describes the properties, sources, and market for germanium.

  4. Mineral commodity profiles: Germanium

    USGS Publications Warehouse

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  5. Germanium geochemistry and mineralogy

    USGS Publications Warehouse

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  6. Germanium detector passivated with hydrogenated amorphous germanium

    DOEpatents

    Hansen, William L.; Haller, Eugene E.

    1986-01-01

    Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

  7. Germanium, carbon-germanium, and silicon-germanium triangulenes.

    PubMed

    Gapurenko, Olga A; Starikov, Andrey G; Minyaev, Ruslan M; Minkin, Vladimir I

    2015-11-01

    A series of germanium-containing triangular molecules have been studied by density functional theory (DFT) calculations. The triangulene topology of the compounds provides for their high-spin ground states and strong sign alternation of spin density and atomic charge distributions. High values of the exchange coupling constants witness ferromagnetic ordering of electronic structures of all studied triangulenes. The compounds bearing more electronegative atoms in a-positions of the triangular networks possess higher aromatic character and stronger ferromagnetic ordering.

  8. Lithium drifted germanium system

    NASA Technical Reports Server (NTRS)

    Fjarlie, E. J.

    1969-01-01

    General characteristics of the lithium-drifted germanium photodiode-Dewar-preamplifier system and particular operating instructions for the device are given. Information is included on solving operational problems.

  9. Bridgman Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Cobb, S. D.; Motakef, S.

    1997-01-01

    The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.

  10. Mesostructured Metal Germanium Sulfide and Selenide Materials Based on the Tetrahedral [Ge 4S 10] 4- and [Ge 4Se 10] 4- Units: Surfactant Templated Three-Dimensional Disordered Frameworks Perforated with Worm Holes

    NASA Astrophysics Data System (ADS)

    Wachhold, Michael; Kasthuri Rangan, K.; Lei, Ming; Thorpe, M. F.; Billinge, Simon J. L.; Petkov, Valeri; Heising, Joy; Kanatzidis, Mercouri G.

    2000-06-01

    The polymerization of [Ge4S10]4- and [Ge4Se10]4- unit clusters with the divalent metal ions Zn2+, Cd2+, Hg2+, Ni2+, and Co2+ in the presence of various surfactant cations leads to novel mesostructured phases. The surfactants are the quaternary ammonium salts C12H25NMe3Br, C14H29NMe3Br, C16H33NMe3Br, and C18H37NMe3Br, which play the role of templates, helping to assemble a three-dimensional mesostructured metal-germanium chalcogenide framework. These materials are stoichiometric in nature and have the formula of (R-NMe3)2[MGe4Q10] (Q=S, Se). The local atomic structure was probed by X-ray diffuse scattering and pair distribution function analysis methods and indicates that the adamantane clusters stay intact while the linking metal atoms possess a tetrahedral coordination environment. A model can be derived, from the comparison of measured and simulated X-ray powder diffraction patterns, describing the structure as an amorphous three-dimensional framework consisting of adamantane [Ge4Q10]4- units that are bridged by tetrahedral coordinated M2+ cations. The network structures used in the simulations were derived from corresponding disordered structures developed for amorphous silicon. The frameworks in (R-NMe3)2[MGe4Q10] are perforated with worm hole-like tunnels, occupied by the surfactant cations, which show no long-range order. This motif is supported by transmission electron microscopy images of these materials. The pore sizes of these channels were estimated to lie in the range of 20-30 Å, depending on the appointed surfactant cation length. The framework wall thickness of ca. 10 Å is thereby independent from the surfactant molecules used. Up to 80% of the surfactant molecules can be removed by thermal degradation under vacuum without loss of mesostructural integrity. Physical, chemical, and spectroscopic properties of these materials are discussed.

  11. Selenium Sulfide

    MedlinePlus

    Selenium sulfide comes in a lotion and is usually applied as a shampoo. As a shampoo, selenium sulfide usually is used twice a week for the first ... it is irritating. Rinse off all of the lotion.Do not use this medication on children younger ...

  12. Germanium detector vacuum encapsulation

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

    1991-01-01

    This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

  13. Germanium: An aqueous processing review

    SciTech Connect

    Lier, R.J.M. van; Dreisinger, D.B.

    1995-08-01

    In industrial aqueous solutions, germanium generally occurs in trace amounts amid high concentrations of other metals, such as zinc, copper and iron. Separation of germanium from these metals as well as its isolation from gallium and indium pose a real challenge to the hydrometallurgist. After a brief discussion of the aqueous chemistry of germanium, this paper reviews the flowsheet of the Apex Mine in Utah. The Apex property was the only mine in the world to be operated primarily for production of gallium and germanium, but apparently closed due to great operating difficulties. Several process variants proposed for the treatment of the Apex ore, including bioleaching methods, are addressed. Following a more general description of the behavior of germanium in hydrometallurgical zinc processing streams, available technology for its recovery from aqueous solutions is summarized. Precipitation, solvent extraction, ion exchange, electrowinning, ion flotation and liquid-membrane separation are all outlined in terms of the aqueous chemistry of germanium. Finally, the production of high purity germanium dioxide and metal is briefly discussed. 61 refs.

  14. Slow Crack Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Salem, Jon

    2016-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A=1.7), it is not as anisotropic as SiC, NiAl, or Cu, as evidence by consistent fracture toughness on the 100, 110, and 111 planes. Germanium does not exhibit significant slow crack growth in distilled water. (n=100). Practical values for engineering design are a fracture toughness of 0.7 MPam and a Weibull modulus of m=6+/-2. For well ground and reasonable handled coupons, fracture strength should be greater than 30 MPa.

  15. Carbonyl sulfide

    Integrated Risk Information System (IRIS)

    Carbonyl sulfide ; CASRN 463 - 58 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic

  16. Hydrogen sulfide

    Integrated Risk Information System (IRIS)

    Hydrogen sulfide ; 7783 - 06 - 4 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Effec

  17. Selenium sulfide

    Integrated Risk Information System (IRIS)

    Selenium sulfide ; CASRN 7446 - 34 - 6 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic

  18. Electrodeposited germanium nanowires.

    PubMed

    Mahenderkar, Naveen K; Liu, Ying-Chau; Koza, Jakub A; Switzer, Jay A

    2014-09-23

    Germanium (Ge) is a group IV semiconductor with superior electronic properties compared with silicon, such as larger carrier mobilities and smaller effective masses. It is also a candidate anode material for lithium-ion batteries. Here, a simple, one-step method is introduced to electrodeposit dense arrays of Ge nanowires onto indium tin oxide (ITO) substrates from aqueous solution. The electrochemical reduction of ITO produces In nanoparticles that act as a reduction site for aqueous Ge(IV) species, and as a solvent for the crystallization of Ge nanowires. Nanowires deposited at 95 °C have an average diameter of 100 nm, whereas those deposited at room temperature have an average diameter of 35 nm. Both optical absorption and Raman spectroscopy suggest that the electrodeposited Ge is degenerate. The material has an indirect bandgap of 0.90-0.92 eV, compared with a value of 0.67 eV for bulk, intrinsic Ge. The blue shift is attributed to the Moss-Burstein effect, because the material is a p-type degenerate semiconductor. On the basis of the magnitude of the blue shift, the hole concentration is estimated to be 8 × 10(19) cm(-3). This corresponds to an In impurity concentration of about 0.2 atom %. The resistivity of the wires is estimated to be 4 × 10(-5) Ω·cm. The high conductivity of the wires should make them ideal for lithium-ion battery applications. PMID:25157832

  19. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    PubMed

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  20. Dermal absorption of inorganic germanium in rats.

    PubMed

    Yokoi, Katsuhiko; Kawaai, Takae; Konomi, Aki; Uchida, Yuka

    2008-11-01

    So-called germanium 'health' products including dietary supplements, cosmetics, accessories, and warm bath service containing germanium compounds and metalloid are popular in Japan. Subchronic and chronic oral exposure of germanium dioxide (GeO(2)), popular chemical form of inorganic germanium causes severe germanium toxicosis including death and kidney dysfunction in humans and experimental animals. Intestinal absorption of neutralized GeO(2) or germanate is almost complete in humans and animals. However, it is not known whether germanium is cutaneously absorbed. We tested dermal absorption of neutralized GeO(2) or germanate using male F344/N rats. Three groups of rats were treated with a 3-h topical application of hydrophilic ointment containing graded level of neutralized GeO(2) (pH 7.4): 0, 0.21 and 0.42 mg GeO(2)/g. Germanium concentration in blood and tissues sampled from rats after topical application of inorganic germanium was measured by inductively coupled plasma-mass spectrometry. Animals topically applied 0.42 mg GeO(2)/g ointment had significantly higher germanium concentrations in plasma, liver, and kidney than those of rats that received no topical germanium. The results indicate that skin is permeable to inorganic germanium ion or germanate and recurrent exposure of germanium compounds may pose a potential health hazard.

  1. The Germanium Dichotomy in Martian Meteorites

    NASA Technical Reports Server (NTRS)

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  2. Surface Passivation of Germanium Nanowires

    SciTech Connect

    Adhikari, Hemant; Sun, Shiyu; Pianetta, Piero; Chidsey, Chirstopher E.D.; McIntyre, Paul C.; /SLAC, SSRL

    2005-05-13

    The surface of single crystal, cold-wall CVD-grown germanium nanowires was studied by synchrotron radiation photoemission spectroscopy (SR-PES) and also by conventional XPS. The as-grown germanium nanowires seem to be hydrogen terminated. Exposure to laboratory atmosphere leads to germanium oxide growth with oxidation states of Ge{sup 1+}, Ge{sup 2+}, Ge{sup 3+}, while exposure to UV light leads to a predominance of the Ge{sup 4+} oxidation state. Most of the surface oxide could be removed readily by aqueous HF treatment which putatively leaves the nanowire surface hydrogen terminated with limited stability in air. Alternatively, chlorine termination could be achieved by aq. HCl treatment of the native oxide-coated nanowires. Chlorine termination was found to be relatively more stable than the HF-last hydrogen termination.

  3. Optical transparency of crystalline germanium

    NASA Astrophysics Data System (ADS)

    Kaplunov, I. A.; Smirnov, Yu. M.; Kolesnikov, A. I.

    2005-02-01

    This paper discusses the optical transparency of single-crystal and polycrystalline germanium. It is shown that the attenuation of IR radiation is affected by the presence of impurities (their form and concentration) and the structure of the material. The temperature dependences of the attenuation factor are obtained.

  4. Sulfide chemiluminescence detection

    DOEpatents

    Spurlin, Stanford R.; Yeung, Edward S.

    1985-01-01

    A method of chemiluminescently determining a sulfide which is either hydrogen sulfide or methyl mercaptan by reacting the sulfide with chlorine dioxide at low pressure and under conditions which allow a longer reaction time in emission of a single photon for every two sulfide containing species, and thereafter, chemiluminescently detecting and determining the sulfide. The invention also relates not only to the detection method, but the novel chemical reaction and a specifically designed chemiluminescence detection cell for the reaction.

  5. Sulfide chemiluminescence detection

    DOEpatents

    Spurlin, S.R.; Yeung, E.S.

    1985-11-26

    A method is described for chemiluminescently determining a sulfide which is either hydrogen sulfide or methyl mercaptan by reacting the sulfide with chlorine dioxide at low pressure and under conditions which allow a longer reaction time in emission of a single photon for every two sulfide containing species, and thereafter, chemiluminescently detecting and determining the sulfide. The invention also relates not only to the detection method, but the novel chemical reaction and a specifically designed chemiluminescence detection cell for the reaction. 4 figs.

  6. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  7. Calibration of Germanium Resistance Thermometers

    NASA Technical Reports Server (NTRS)

    Ladner, D.; Urban, E.; Mason, F. C.

    1987-01-01

    Largely completed thermometer-calibration cryostat and probe allows six germanium resistance thermometers to be calibrated at one time at superfluid-helium temperatures. In experiments involving several such thermometers, use of this calibration apparatus results in substantial cost savings. Cryostat maintains temperature less than 2.17 K through controlled evaporation and removal of liquid helium from Dewar. Probe holds thermometers to be calibrated and applies small amount of heat as needed to maintain precise temperature below 2.17 K.

  8. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Guberman, David

    2010-01-01

    The article provides information on germanium, an element with electrical properties between those of a metal and an insulator. Applications of germanium include its use as a component of the glass in fiber-optic cable, in infrared optics devices and as a semiconductor and substrate used in electronic and solar applications. Germanium was first isolated by German chemist Clemens Winkler in 1886 and was named after Winkler's native country. In 2008, the leading sources of primary germanium from coal or zinc include Canada, China and Russia.

  9. Germanium recycling in the United States in 2000

    USGS Publications Warehouse

    Jorgenson, John D.

    2006-01-01

    This report describes the recycling flow of germanium in the United States in 2000, as well as other germanium material flow streams. Germanium was recycled mostly from new scrap that was generated during the manufacture of germanium-containing fiber optic cables and from new and old scrap products of germanium-containing infrared imaging devices. In 2000, about 11.5 metric tons of germanium was recycled, about 40 percent of which was derived from old scrap. The germanium recycling rate was estimated to be 50 percent, and germanium scrap recycling efficiency, 76 percent.

  10. Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

    PubMed

    Qin, Jinwen; Cao, Minhua

    2016-04-20

    Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs.

  11. Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

    PubMed

    Qin, Jinwen; Cao, Minhua

    2016-04-20

    Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs. PMID:26990878

  12. Laser synthesis of germanium tin alloys on virtual germanium

    NASA Astrophysics Data System (ADS)

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  13. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Jorgenson, John D.

    2003-01-01

    Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

  14. High efficiency germanium-assisted grating coupler.

    PubMed

    Yang, Shuyu; Zhang, Yi; Baehr-Jones, Tom; Hochberg, Michael

    2014-12-15

    We propose a fiber to submicron silicon waveguide vertical coupler utilizing germanium-on-silicon gratings. The germanium is epitaxially grown on silicon in the same step for building photodetectors. Coupling efficiency based on FDTD simulation is 76% at 1.55 µm and the optical 1dB bandwidth is 40 nm.

  15. Black Germanium fabricated by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

  16. MAJORANA Collaboration's experience with germanium detectors

    SciTech Connect

    Mertens, S.; Abgrall, N.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Cuesta, C.; Detwiler, J. A.; Efremenko, Yu; Ejiri, H.; Elliott, S. R.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; MacMullin, J.; Martin, R. D.; Meijer, S. J.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Shanks, B.; Shirchenko, M.; Snyder, N.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.

    2015-05-01

    The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  17. MAJORANA Collaboration's experience with germanium detectors

    DOE PAGESBeta

    Mertens, S.; Abgrall, N.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; et al

    2015-05-01

    The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANAmore » mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.« less

  18. Cadmium sulfide membranes

    DOEpatents

    Spanhel, Lubomir; Anderson, Marc A.

    1992-07-07

    A method is described for the creation of novel q-effect cadmium sulfide membranes. The membranes are made by first creating a dilute cadmium sulfide colloid in aqueous suspension and then removing the water and excess salts therefrom. The cadmium sulfide membrane thus produced is luminescent at room temperature and may have application in laser fabrication.

  19. Cadmium sulfide membranes

    DOEpatents

    Spanhel, Lubomir; Anderson, Marc A.

    1991-10-22

    A method is described for the creation of novel q-effect cadmium sulfide membranes. The membranes are made by first creating a dilute cadmium sulfide colloid in aqueous suspension and then removing the water and excess salts therefrom. The cadmium sulfide membrane thus produced is luminescent at room temperature and may have application in laser fabrication.

  20. SULFIDE MINERALS IN SEDIMENTS

    EPA Science Inventory

    The formation processes of metal sulfides in sediments, especially iron sulfides, have been the subjects of intense scientific research because of linkages to the global biogeochemical cycles of iron, sulfur, carbon, and oxygen. Transition metal sulfides (e.g., NiS, CuS, ZnS, Cd...

  1. Germanium multiphase equation of state

    DOE PAGESBeta

    Crockett, Scott D.; Lorenzi-Venneri, Giulia De; Kress, Joel D.; Rudin, Sven P.

    2014-05-07

    A new SESAME multiphase germanium equation of state (EOS) has been developed using the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element

  2. Electronic considerations for externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Landis, D. A.; Goulding, F. S.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Malone, D. F.; Pollard, M. J.

    1991-01-01

    The dominant background source for germanium gamma ray detector spectrometers used for some astrophysics observations is internal beta decay. Externally segmented germanium gamma ray coaxial detectors can identify beta decay by localizing the event. Energetic gamma rays interact in the germanium detector by multiple Compton interactions while beta decay is a local process. In order to recognize the difference between gamma rays and beta decay events, the external electrode (outside of detector) is electrically partitioned. The instrumentation of these external segments and the consequence with respect to the spectrometer energy signal is examined.

  3. Patterning NHS-terminated SAMs on germanium.

    PubMed

    Morris, Carleen J; Shestopalov, Alexander A; Gold, Brian H; Clark, Robert L; Toone, Eric J

    2011-05-17

    Here we report a simple, robust approach to patterning functional SAMs on germanium. The protocol relies on catalytic soft-lithographic pattern transfer from an elastomeric stamp bearing pendant immobilized sulfonic acid moieties to an NHS-functionalized bilayer molecular system comprising a primary ordered alkyl monolayer and a reactive ester secondary overlayer. The catalytic polyurethane-acrylate stamp was used to form micrometer-scale features of chemically distinct SAMs on germanium. The methodology represents the first example of patterned SAMs on germanium, a semiconductor material.

  4. A review on germanium nanowires.

    PubMed

    Pei, Li Z; Cai, Zheng Y

    2012-01-01

    Ge nanowires exhibit wide application potential in the fields of nanoscale devices due to their excellently optical and electrical properties. This article reviews the recent progress and patents of Ge nanowires. The recent progress and patents for the synthesis of Ge nanowires using chemical vapor deposition, laser ablation, thermal evaporation, template method and supercritical fluid-liquid-solid method are demonstrated. Amorphous germanium oxide layer and defects existing in Ge nanowires result in poor Ohmic contact between Ge nanowires and electrodes. Therefore, Ge nanowires should be passivated in order to deposit connecting electrodes before applied in nanoelectronic devices. The experimental progress and patents on the application of Ge nanowires as field effect transistors, lithium batteries, photoresistors, memory cell and fluid sensors are discussed. Finally, the future development of Ge nanowires for the synthesis and practical application is also discussed.

  5. High Efficiency Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Little, L M; Bixler, J V

    2006-05-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 10{sup 4}. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO{sub 2} laser sets an upper bound on total integrated scatter of 0.5%.

  6. Solution synthesis of germanium nanocrystals

    DOEpatents

    Gerung, Henry; Boyle, Timothy J.; Bunge, Scott D.

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  7. Germanium: giving microelectronics an efficiency boost

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-01-01

    Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

  8. Germanium: giving microelectronics an efficiency boost

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-07-30

    Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

  9. Tough germanium nanoparticles under electrochemical cycling.

    PubMed

    Liang, Wentao; Yang, Hui; Fan, Feifei; Liu, Yang; Liu, Xiao Hua; Huang, Jian Yu; Zhu, Ting; Zhang, Sulin

    2013-04-23

    Mechanical degradation of the electrode materials during electrochemical cycling remains a serious issue that critically limits the capacity retention and cyclability of rechargeable lithium-ion batteries. Here we report the highly reversible expansion and contraction of germanium nanoparticles under lithiation-delithiation cycling with in situ transmission electron microscopy (TEM). During multiple cycles to the full capacity, the germanium nanoparticles remained robust without any visible cracking despite ∼260% volume changes, in contrast to the size-dependent fracture of silicon nanoparticles upon the first lithiation. The comparative in situ TEM study of fragile silicon nanoparticles suggests that the tough behavior of germanium nanoparticles can be attributed to the weak anisotropy of the lithiation strain at the reaction front. The tough germanium nanoparticles offer substantial potential for the development of durable, high-capacity, and high-rate anodes for advanced lithium-ion batteries.

  10. Germanium Resistance Thermometer For Subkelvin Temperatures

    NASA Technical Reports Server (NTRS)

    Castles, Stephen H.

    1993-01-01

    Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

  11. Dangling bonds and vacancies in germanium

    NASA Astrophysics Data System (ADS)

    Weber, J. R.; Janotti, A.; Van de Walle, C. G.

    2013-01-01

    The quest for metal-oxide-semiconductor field-effect transistors (MOSFETs) with higher carrier mobility has triggered great interest in germanium-based MOSFETs. Still, the performance of germanium-based devices lags significantly behind that of their silicon counterparts, possibly due to the presence of defects such as dangling bonds (DBs) and vacancies. Using screened hybrid functional calculations we investigate the role of DBs and vacancies in germanium. We find that the DB defect in germanium has no levels in the band gap; it acts as a negatively charged acceptor with the (0/-1) transition level below the valence-band maximum (VBM). This explains the absence of electron-spin-resonance observations of DBs in germanium. The vacancy in germanium has a much lower formation energy than the vacancy in silicon and is stable in a number of charge states, depending on the position of the Fermi level. We find the (0/-1) and (-1/-2) transition levels at 0.16 and 0.38 eV above the VBM; the spacing of these levels is explained based on the strength of intraorbital repulsion. We compare these results with calculations for silicon, as well as with available experimental data.

  12. The mineralogical deportment of germanium in the Clarksville Electrolytic Zinc Plant of Savage Zinc Inc.

    SciTech Connect

    Dutrizac, J.E.; Chen, T.T.; Longton, R.J.

    1996-08-01

    Germanium is a strategic element which is widely used for infrared night vision systems, fiber optics, gamma-ray detectors, semiconductors, catalysts, and phosphors. Germanium is recovered from the dusts and residues generated during the processing of certain complex Zn-Cu-Pb sulfide ores or low-temperature sphalerite ores. A mineralogical study was carried out on the neutral leach residue and weak acid leach residue generated from Gordonsville zinc concentrate at the Clarksville Electrolytic Zinc Plant of Savage Zinc Inc. The intent was to characterize the mineral forms and associations of germanium. The Gordonsville zinc concentrate consists mostly of sphalerite which has a solid solution Ge content of {approximately} 400 ppm; the sphalerite is the dominant, if not only, Ge carrier in the concentrate. The major Ge carrier in the neutral residue is the iron gel-silica gel phase, but modest amounts of Ge are present in the ZnO, ZnFe{sub 2}O{sub 4}, sphalerite, and Zn-Fe-Pb silicate phases. The major Ge carrier in the acid residue is the iron gel-silica gel phase which contains up to 1.7% Ge and accounts for {approximately} 70% of the total Ge content of this residue. The remaining Ge is carried by the Zn-Fe-Pb silicate, ZnFe{sub 2}O{sub 4}, and some of the rare Mn-Pb-Fe oxide phases.

  13. Sulfide Mineralogy and Geochemistry

    NASA Astrophysics Data System (ADS)

    Dilles, John

    2007-02-01

    Reviews in Mineralogy and Geochemistry Series, Volume 61 David J. Vaughan, Editor Geochemical Society and Mineralogical Society of America; ISBN 0-939950-73-1 xiii + 714 pp.; 2006; $40. Sulfide minerals as a class represent important minor rock-forming minerals, but they are generally known as the chief sources of many economic metallic ores. In the past two decades, sulfide research has been extended to include important roles in environmental geology of sulfide weathering and resultant acid mine drainage, as well as in geomicrobiology in which bacteria make use of sulfides for metabolic energy sources. In the latter respect, sulfides played an important role in early evolution of life on Earth and in geochemical cycling of elements in the Earth's crust and hydrosphere.

  14. Germanium-silicon solid solutions

    NASA Technical Reports Server (NTRS)

    Zemskov, V. S.; Kubasov, V. N.; Belokurova, I. N.; Titkov, A. N.; Shulpina, I. L.; Safarov, V. I.; Guseva, N. B.

    1977-01-01

    An experiment on melting and directional crystallization of an antimony (Sb) doped germanium silicon (GeSi) solid solution was designed for the Apollo-Soyuz Test Project (ASTP) to study the possibility of using zero-g conditions for obtaining solid-solution monocrystals with uniformly distributed components. Crystallization in the zero-g environment did not occur under ideal stationary growth and segregation conditions. Crystallization under zero-g conditions revealed the heterogeneous nature of Si and Sb distribution in the cross sections of crystals. The presence of the radial thermal gradient in the multipurpose furnace could be one of the reasons for such Si and Sb distribution. The structure of space-grown crystals correlates with the nature of heterogeneities of Si and Sb distribution in crystals. The type of surface morphology and the contour observed in space-grown crystals were never observed in ground-based crystals and indicate the absence of wetting of the graphitized walls of the ampoule by the melt during melting and crystallization.

  15. Recovery of germanium-68 from irradiated targets

    DOEpatents

    Phillips, Dennis R.; Jamriska, Sr., David J.; Hamilton, Virginia T.

    1993-01-01

    A process for selective separation of germanium-68 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, adjusting the pH of the second ion-containing solution to within a range of from about 0.7 to about 3.0, adjusting the soluble metal halide concentration in the second ion-containing solution to a level adapted for subsequent separation of germanium, contacting the pH-adjusted, soluble metal halide-containing second ion-containing solution with a dextran-based material whereby germanium ions are separated by the dextran-based material, and recovering the germanium from the dextran-based material, preferably by distillation.

  16. Front End Spectroscopy ASIC for Germanium Detectors

    NASA Astrophysics Data System (ADS)

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  17. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    NASA Technical Reports Server (NTRS)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  18. Chalcogenide and germanium hybrid optics

    NASA Astrophysics Data System (ADS)

    Cogburn, Gabriel

    2011-11-01

    When choosing a material to design infrared optics, an optical designer has to decide which material properties are most important to what they are trying to achieve. Factors include; cost, optical performance, index of material, sensor format, manufacturability, mechanical mounting and others. This paper will present an optical design that is made for a 640×480, 17μm sensor and is athermalized by using the material properties of chalcogenide glass and Germanium (Ge). The optical design will be a 3-element, f1.0 optic with an EFL of 20mm at 10μm. It consists of two Ge spherical lenses and a middle chalcogenide aspheric element. By using Ge and chalcogenide, this design utilizes the high index of Ge and combines it with the lower dn/dt of chalcogenide glass to provide an athermalized design without the use of additional electro-optical compensation inside the assembly. This study will start from the optical design process and explain the mechanical and optical properties of the design, then show the manufacturing process of molding an aspheric chalcogenide element. After the three elements are manufactured, they will be assembled and tested throughout the temperature range of -40 to 85°C to compare optical performance to design expectations. Ultimately, this paper will show that a high performance, athermalized optical assembly is possible to manufacture at a lower cost with the use of combining different infrared materials that allow for spherical Ge lenses and only one aspherical chalcogenide element which can be produced in higher volumes at lower costs through glass molding technology.

  19. Germanium-Based Nanomaterials for Rechargeable Batteries.

    PubMed

    Wu, Songping; Han, Cuiping; Iocozzia, James; Lu, Mingjia; Ge, Rongyun; Xu, Rui; Lin, Zhiqun

    2016-07-01

    Germanium-based nanomaterials have emerged as important candidates for next-generation energy-storage devices owing to their unique chemical and physical properties. In this Review, we provide a review of the current state-of-the-art in germanium-based materials design, synthesis, processing, and application in battery technology. The most recent advances in the area of Ge-based nanocomposite electrode materials and electrolytes for solid-state batteries are summarized. The limitations of Ge-based materials for energy-storage applications are discussed, and potential research directions are also presented with an emphasis on commercial products and theoretical investigations.

  20. Atomic scale dynamics of ultrasmall germanium clusters

    PubMed Central

    Bals, S.; Van Aert, S.; Romero, C.P.; Lauwaet, K.; Van Bael, M.J.; Schoeters, B.; Partoens, B.; Yücelen, E.; Lievens, P.; Van Tendeloo, G.

    2012-01-01

    Starting from the gas phase, small clusters can be produced and deposited with huge flexibility with regard to composition, materials choice and cluster size. Despite many advances in experimental characterization, a detailed morphology of such clusters is still lacking. Here we present an atomic scale observation as well as the dynamical behaviour of ultrasmall germanium clusters. Using quantitative scanning transmission electron microscopy in combination with ab initio calculations, we are able to characterize the transition between different equilibrium geometries of a germanium cluster consisting of less than 25 atoms. Seven-membered rings, trigonal prisms and some smaller subunits are identified as possible building blocks that stabilize the structure. PMID:22692540

  1. Neutron-transmutation-doped germanium bolometers

    NASA Technical Reports Server (NTRS)

    Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

    1983-01-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

  2. Atomic scale dynamics of ultrasmall germanium clusters.

    PubMed

    Bals, S; Van Aert, S; Romero, C P; Lauwaet, K; Van Bael, M J; Schoeters, B; Partoens, B; Yücelen, E; Lievens, P; Van Tendeloo, G

    2012-06-12

    Starting from the gas phase, small clusters can be produced and deposited with huge flexibility with regard to composition, materials choice and cluster size. Despite many advances in experimental characterization, a detailed morphology of such clusters is still lacking. Here we present an atomic scale observation as well as the dynamical behaviour of ultrasmall germanium clusters. Using quantitative scanning transmission electron microscopy in combination with ab initio calculations, we are able to characterize the transition between different equilibrium geometries of a germanium cluster consisting of less than 25 atoms. Seven-membered rings, trigonal prisms and some smaller subunits are identified as possible building blocks that stabilize the structure.

  3. Silicon and germanium nanocrystals: properties and characterization

    PubMed Central

    Carvalho, Alexandra; Coutinho, José

    2014-01-01

    Summary Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. PMID:25383290

  4. Germanium-overcoated niobium Dayem bridges

    NASA Technical Reports Server (NTRS)

    Holdeman, L. B.; Peters, P. N.

    1976-01-01

    Overcoating constriction microbridges with semiconducting germanium provides additional thermal conductivity at liquid-helium temperatures to reduce the effects of self-heating in these Josephson junctions. Microwave-induced steps were observed in the I-V characteristics of an overcoated Dayem bridge fabricated in a 15-nm-thick niobium film; at least 20 steps could be counted at 4.2 K. No steps were observed in the I-V characteristics of the bridge prior to overcoating. In addition, the germanium overcoat can protect against electrical disturbances at room temperature.

  5. Novel metastable metallic and semiconducting germaniums

    PubMed Central

    Selli, Daniele; Baburin, Igor A.; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues. PMID:23492980

  6. Improving CMOS-compatible Germanium photodetectors.

    PubMed

    Li, Guoliang; Luo, Ying; Zheng, Xuezhe; Masini, Gianlorenzo; Mekis, Attila; Sahni, Subal; Thacker, Hiren; Yao, Jin; Shubin, Ivan; Raj, Kannan; Cunningham, John E; Krishnamoorthy, Ashok V

    2012-11-19

    We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

  7. Germanium JFET for Cryogenic Readout Electronics

    NASA Technical Reports Server (NTRS)

    Das, N. C.; Monroy, C.; Jhabvala, M.; Shu, P.

    1999-01-01

    The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).

  8. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  9. Thioarsenates in sulfidic waters.

    PubMed

    Stauder, S; Raue, B; Sacher, F

    2005-08-15

    It has long been recognized that the formation of soluble arsenic sulfur complexes plays a key role for the mobility and toxicity of arsenic in sulfate-reducing environments. Knowledge of the exact arsenic species is essential to understand the behavior of arsenic in sulfidic aquifers and to develop remediation strategies. In the past, monomeric and trimeric thioarsenites were assumed to be the existing species in sulfidic systems. In this study, thioarsenates were identified by IC-ICP/MS in arsenite- and sulfide-containing solutions as well as in a reduced groundwater from a contaminated site. The unexpected finding of an oxidation of As(lll) to As(V) in thioarsenates in strongly reducing systems can be explained by the high affinity between As(Ill) and sulfur. In sulfide-containing solutions without oxidant, As(lll) therefore undergoes disproportionation to thioarsenates (As(V)) and elemental arsenic. It has previously been supposed that mobility as well as toxicity of arsenic increases if the redox state decreases. For sulfidic waters, the opposite is probably the case. Thus, the formation of thioarsenates could be used in connection with remediation strategies. Thioarsenates are highly sensitive to oxygen and pH. This is important for analytical procedures. A loss of soluble arsenic as well as a conversion to arsenite and arsenate may occur if water samples containing thioarsenates are analyzed with conventional methods.

  10. Sulfidation of silver nanoparticles

    NASA Astrophysics Data System (ADS)

    Levard, C.; Michel, F. M.; Brown, G. E.

    2010-12-01

    Rapid development of nanotechnologies that exploit the properties of silver nanoparticles (Ag-NPs) raises questions concerning the impact of Ag on the environment. Ag-NPs are currently among the most widely used in the nanotechnology industry and the amount released into the environment is expected to increase along with production (1). When present in geochemical systems, Ag-NPs may undergo a variety of changes due to varying redox, pH, and chemical conditions. Expected changes range from surface modification (e.g., oxidation, sulfidation, chloridation etc.) to complete dissolution and re-precipitation. In this context, the focus of our work is on understanding the behavior of synthetic Ag-NPs with different particle sizes under varying conditions relevant to the environment. Sulfidation of Ag-NPs is of particular interest since it among the processes most likely to occur in aqueous systems, in particular under reducing conditions. Three sizes of Ag-NPs coated with polyvinyl pyrrolidone were produced using the polyol process (2) (7 ±1; 20 ±4, and 40 ±9 nm). Batch solutions containing the different Ag-NPs were subsequently reacted with Na2S solutions of different concentrations. The sulfidation process was followed step-wise for 24 hours and the corrosion products formed were characterized by electron microscopy (TEM/SEM), diffraction (XRD), and photo-electron spectroscopy (XPS). Surface charge (pHPZC) of the products formed during this process was also measured, as were changes in solubility and reactivity. Based on experimental observations we infer that the sulfidation process is the result of dissolution-precipitation and find that: (i) acanthite (Ag2S) is formed as a corrosion product; (ii) Ag-NPs aggregation increased with sulfidation rate; (iii) pHPZC increases with the rate of sulfidation; and (iv) the solubility of the corrosion products formed from sulfidation appears lower than that of non-sulfidated Ag-NPs. We observe size-dependent differences in

  11. SULFIDE METHOD PLUTONIUM SEPARATION

    DOEpatents

    Duffield, R.B.

    1958-08-12

    A process is described for the recovery of plutonium from neutron irradiated uranium solutions. Such a solution is first treated with a soluble sullide, causing precipitation of the plutoniunn and uraniunn values present, along with those impurities which form insoluble sulfides. The precipitate is then treated with a solution of carbonate ions, which will dissolve the uranium and plutonium present while the fission product sulfides remain unaffected. After separation from the residue, this solution may then be treated by any of the usual methods, such as formation of a lanthanum fluoride precipitate, to effect separation of plutoniunn from uranium.

  12. Spin transport in p-type germanium.

    PubMed

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  13. Spin transport in p-type germanium

    NASA Astrophysics Data System (ADS)

    Rortais, F.; Oyarzún, S.; Bottegoni, F.; Rojas-Sánchez, J.-C.; Laczkowski, P.; Ferrari, A.; Vergnaud, C.; Ducruet, C.; Beigné, C.; Reyren, N.; Marty, A.; Attané, J.-P.; Vila, L.; Gambarelli, S.; Widiez, J.; Ciccacci, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2016-04-01

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle {θ\\text{SHE}} in Ge-p (6-7× {{10}-4} ) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  14. High-fidelity chemical patterning on oxide-free germanium.

    PubMed

    Hohman, J Nathan; Kim, Moonhee; Lawrence, Jeffrey A; McClanahan, Patrick D; Weiss, Paul S

    2012-04-25

    Oxide-free germanium can be chemically patterned directly with self-assembled monolayers of n-alkanethiols via submerged microcontact printing. Native germanium dioxide is water soluble; immersion activates the germanium surface for self-assembly by stripping the oxide. Water additionally provides an effective diffusion barrier that prevents undesired ink transport. Patterns are stable with respect to molecular exchange by carboxyl-functionalized thiols.

  15. Germanium films by polymer-assisted deposition

    DOEpatents

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  16. Xenon Filled Silicon Germanium Thermoelectric Generators

    NASA Technical Reports Server (NTRS)

    Dewinter, F.

    1972-01-01

    An analysis is presented that shows the desirability and feasibility of using a xenon fill in the initial stages of operation of a silicon-germanium radioisotope thermoelectric generator to be used in outer-planetary exploration. The xenon cover gas offers protection against oxidation and against material sublimation, and allows the generator to deliver required power throughout the prelaunch and launch phases. The protective mechanisms afforded by the xenon cover gas and the mechanization of a xenon supply system are also discussed.

  17. Large Cryogenic Germanium Detector. Final Report

    SciTech Connect

    Mandic, Vuk

    2013-02-13

    The goal of this project was to investigate possible ways of increasing the size of cryogenic Ge detectors. This project identified two possible approaches to increasing the individual cryogenic Ge detector size. The first approach relies on using the existing technology for growing detector-grade (high-purity) germanium crystals of dislocation density 100-7000 cm{sup -2}. The second approach is to consider dislocation-free Ge crystals.

  18. Bottom-up assembly of metallic germanium

    PubMed Central

    Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, LaReine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

    2015-01-01

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm−3) low-resistivity (10−4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory. PMID:26256239

  19. Germanium-76 Sample Analysis: Revision 3

    SciTech Connect

    Kouzes, Richard T.; Zhu, Zihua; Engelhard, Mark H.

    2011-09-19

    The MAJORANA DEMONSTRATOR is a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0{nu}{beta}{beta}). The DEMONSTRATOR will utilize 76Ge from Russia. The first one-gram sample was received from the supplier for analysis on April 24, 2011. The second one-gram sample was received from the supplier for analysis on July 12, 2011. The third sample, which came from the first large shipment of germanium from the vendor, was received from Oak Ridge National Laboratory (ORNL) on September 13, 2011. The Environmental Molecular Sciences facility, a DOE user facility at PNNL, was used to make the required isotopic and chemical purity measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR. The results of these analyses are reported here. The isotopic composition of a sample of natural germanium was also measured twice. Differences in the result between these two measurements led to a re-measurement of the second 76Ge sample.

  20. Zinc sulfide liquefaction catalyst

    DOEpatents

    Garg, Diwakar

    1984-01-01

    A process for the liquefaction of carbonaceous material, such as coal, is set forth wherein coal is liquefied in a catalytic solvent refining reaction wherein an activated zinc sulfide catalyst is utilized which is activated by hydrogenation in a coal derived process solvent in the absence of coal.

  1. Synthesis and characterization of germanium nanowires and germanium/silicon radially heterostructured nanowires

    NASA Astrophysics Data System (ADS)

    Goldthorpe, Irene Anne

    Semiconductor nanowires offer new opportunities to study physical phenomena in low-dimensional nanostructures. They also possess technologically useful properties for applications in electronics, optics, sensing, and thermoelectrics. Germanium nanowires are of particular interest, because of germanium's compatibility with standard silicon integrated circuit fabrication processes, its high electronic carrier mobilities, and the low temperature required for germanium nanowire growth. In this work, epitaxially-aligned germanium nanowires are grown on silicon substrates by chemical vapor deposition through the vapor-liquid-solid mechanism. Uniform nanowire diameters between 5 and 50 nm are obtained through the use of monodisperse gold colloids as catalysts. The crystallographic orientation of the nanowires, their strain, and their heteroepitaxial relationship with the substrate are characterized with transmission electron microscopy (TEM) and x-ray diffraction (XRD). A process for removing the gold catalysts from the tips of the germanium nanowires is demonstrated. Silicon shells are then heteroepitaxially deposited around the wires to fabricate radial heterostructures. These shells passivate the germanium nanowire surface, create electronic band offsets to confine holes away the surface where they can scatter or recombine, and induce strain which could allow for the engineering of properties such as band gap and carrier mobilities. However, analogous to planar heteroepitaxy, surface roughening and misfit dislocations can relax this strain. The effects of coaxial dimensions on strain relaxation in these structures are analyzed quantitatively by TEM and synchrotron XRD, and these results are related to continuum elasticity models. Lessons learned generated two successful strategies for synthesizing coherent core-shell nanowires with large misfit strain: chlorine surface passivation and growth of nanowires with low-energy sidewall facets. Both approaches avoid the strain

  2. Electrochemical behavior of silver sulfide

    SciTech Connect

    Drouven, B.U.E.

    1982-01-01

    The electrochemical behavior of silver sulfide in sulfuric acid as well as in nitric acid was studied using electrodes made from synthetic silver sulfide. The primary techniques used were potentiostatic, potentiodynamic, galvanostatic and corrosion cell experiments. The cathodic reaction of silver sulfide produces silver and hydrogen sulfide. This reaction mechanism is a sequential two step charge transfer involving a single electron in each step. Silver ions are produced from silver sulfide upon applying an anodic potential. The dissolution rate of silver sulfide can be so high that the formation of silver sulfate occurs which partially covers the silver sulfide surface and inhibits a further rate increase. The sulfur from the silver sulfide will be oxidized at low overpotentials to elemental sulfur; at high overpotentials, the oxidation to sulfate or bisulfate is observed. The results suggest that the catalysis of chalcopyrite by the addition of silver ions is caused by the formation and subsequent dissolution of silver sulfide leaving a porous layer behind. The understanding of the reaction mechanism of silver sulfide dissolution and its optimization will significantly improve the economic evaluation of industrial processes using the catalyzed leaching of chalcopyrite. The present knowledge of the catalysis indicates that other ions may be substituted for silver ions which would increase the feasibility of hydrometallurgical processes.

  3. Sulfide detoxification in plant mitochondria.

    PubMed

    Birke, Hannah; Hildebrandt, Tatjana M; Wirtz, Markus; Hell, Rüdiger

    2015-01-01

    In contrast to animals, which release the signal molecule sulfide in small amounts from cysteine and its derivates, phototrophic eukaryotes generate sulfide as an essential intermediate of the sulfur assimilation pathway. Additionally, iron-sulfur cluster turnover and cyanide detoxification might contribute to the release of sulfide in mitochondria. However, sulfide is a potent inhibitor of cytochrome c oxidase in mitochondria. Thus, efficient sulfide detoxification mechanisms are required in mitochondria to ensure adequate energy production and consequently survival of the plant cell. Two enzymes have been recently described to catalyze sulfide detoxification in mitochondria of Arabidopsis thaliana, O-acetylserine(thiol)lyase C (OAS-TL C), and the sulfur dioxygenase (SDO) ethylmalonic encephalopathy protein 1 (ETHE1). Biochemical characterization of sulfide producing and consuming enzymes in mitochondria of plants is fundamental to understand the regulatory network that enables mitochondrial sulfide homeostasis under nonstressed and stressed conditions. In this chapter, we provide established protocols to determine the activity of the sulfide releasing enzyme β-cyanoalanine synthase as well as sulfide-consuming enzymes OAS-TL and SDO. Additionally, we describe a reliable and efficient method to purify OAS-TL proteins from plant material.

  4. Geothermal hydrogen sulfide removal

    SciTech Connect

    Urban, P.

    1981-04-01

    UOP Sulfox technology successfully removed 500 ppM hydrogen sulfide from simulated mixed phase geothermal waters. The Sulfox process involves air oxidation of hydrogen sulfide using a fixed catalyst bed. The catalyst activity remained stable throughout the life of the program. The product stream composition was selected by controlling pH; low pH favored elemental sulfur, while high pH favored water soluble sulfate and thiosulfate. Operation with liquid water present assured full catalytic activity. Dissolved salts reduced catalyst activity somewhat. Application of Sulfox technology to geothermal waters resulted in a straightforward process. There were no requirements for auxiliary processes such as a chemical plant. Application of the process to various types of geothermal waters is discussed and plans for a field test pilot plant and a schedule for commercialization are outlined.

  5. Germanium: From Its Discovery to SiGe Devices

    SciTech Connect

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  6. Long-term behavior of silicon germanium thermoelectric generators

    SciTech Connect

    Shields, V.

    1981-01-01

    Problems regarding the use of silicon germanium technology for Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generators (RTG) have been investigated at JPL. The practicability of storage and the subsequent handling of silicon germanium thermoelectric materials for future use has been addressed. 4 refs.

  7. All-Inorganic Germanium Nanocrystal Films by Cationic Ligand Exchange.

    PubMed

    Wheeler, Lance M; Nichols, Asa W; Chernomordik, Boris D; Anderson, Nicholas C; Beard, Matthew C; Neale, Nathan R

    2016-03-01

    We introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and (1)H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport in germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.

  8. Germanium resistance thermometer calibration at superfluid helium temperatures

    NASA Technical Reports Server (NTRS)

    Mason, F. C.

    1985-01-01

    The rapid increase in resistance of high purity semi-conducting germanium with decreasing temperature in the superfluid helium range of temperatures makes this material highly adaptable as a very sensitive thermometer. Also, a germanium thermometer exhibits a highly reproducible resistance versus temperature characteristic curve upon cycling between liquid helium temperatures and room temperature. These two factors combine to make germanium thermometers ideally suited for measuring temperatures in many cryogenic studies at superfluid helium temperatures. One disadvantage, however, is the relatively high cost of calibrated germanium thermometers. In space helium cryogenic systems, many such thermometers are often required, leading to a high cost for calibrated thermometers. The construction of a thermometer calibration cryostat and probe which will allow for calibrating six germanium thermometers at one time, thus effecting substantial savings in the purchase of thermometers is considered.

  9. All-inorganic Germanium nanocrystal films by cationic ligand exchange

    DOE PAGESBeta

    Wheeler, Lance M.; Nichols, Asa W.; Chernomordik, Boris D.; Anderson, Nicholas C.; Beard, Matthew C.; Neale, Nathan R.

    2016-01-21

    In this study, we introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport inmore » germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.« less

  10. Germanium implanted with high dose oxygen and its optical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu; Kelly, J. C.; Kenny, M. J.

    1990-05-01

    Single crystal n-type Ge samples are implanted with 1 × 10 17 to 1.5 × 10 18 cm -2 oxygen ions at 45 keV. Infrared and Rutherford backscattering measurements indicate that germanium dioxide is formed. The atomic ratio of oxygen to germanium is near the GeO 2 stoichiometric value of 2.0 from the surface down to a depth of 550 Å for germanium samples implanted to 1.5 × 10 18 cm -2. The excess oxygen is redistributed during the implantation. The results of optical reflectivity measurements indicate that the reflectivity of germanium in the 0.2-1.4 μm wavelength region is greatly reduced after high dose oxygen ion implantation. The reflectivity value at about 0.7 μm is near zero for germanium implanted to a dose of 1.5 × 10 18 cm -2.

  11. Tensile strain mapping in flat germanium membranes

    SciTech Connect

    Rhead, S. D. Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R.; Shah, V. A.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.; Sotomayor Torres, C. M.

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  12. Analog/Digital System for Germanium Thermometer

    NASA Technical Reports Server (NTRS)

    Woodhouse, Christopher

    1988-01-01

    Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

  13. High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors

    NASA Astrophysics Data System (ADS)

    Ulaganathan, Rajesh Kumar; Lu, Yi-Ying; Kuo, Chia-Jung; Tamalampudi, Srinivasa Reddy; Sankar, Raman; Boopathi, Karunakara Moorthy; Anand, Ankur; Yadav, Kanchan; Mathew, Roshan Jesus; Liu, Chia-Rung; Chou, Fang Cheng; Chen, Yit-Tsong

    2016-01-01

    In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 A W-1 under 1.5 μW cm-2 illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 A W-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 A W-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104%) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 A W-1 under 1.5 μW cm-2 illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 A W-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 A W-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104%) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05988g

  14. An estimate of the Germanium isotopic composition of the Ocean.

    NASA Astrophysics Data System (ADS)

    Galy, A.; Rouxel, O.; Mantoura, S.; Elderfield, H.; de La Rocha, C.

    2004-12-01

    Ge is a trace element in seawater whose biogeochemistry is dominated by its Si-like behaviour. Its residence time is poorly constrained but could be close to the mixing time of the ocean. In addition, hydrothermal vents are enriched in Ge (relative to Si) and this excess has been witnessed in the water column. Moreover, Si isotopic variations have been reported in the ocean, related to the precipitation of biogenic opal, while the Si residence time is slightly higher than the Ge residence time. Therefore, variations in the isotopic composition of dissolved Ge in the ocean are expected provided that at least one of the major input or output of Ge has a different isotopic composition. Given the low Ge concentration (around 40 picomol/kg) and the state-of-the art analytical facilities, a direct measurement of the isotopic composition of the seawater is barely conceivable. The major input of Ge into the ocean are the rivers and the hydrothermal vents, while the removal of Ge occurs through the precipitation of biogenic opal and the early diagenesis of passive margins. The mechanism of the later is, however, not well established but could be related to the precipitation of Fe-oxyhydroxide. So the measurement of marine authigenic minerals, biogenic silica and the comparison with an estimate of the bulk silicate Earth (BSE) composition will give some constraints on the Germanium isotopic composition of the ocean. A new technique for the precise and accurate determination of Ge stable isotope compositions has been developed and applied to silicate, sulfide, and biogenic material. The analyses were performed using a continuous flow hydride generation system coupled to a Nu Instrument MC-ICPMS. Samples have been purified through anion and cation exchange resins to separate Ge from matrix elements and potential interferences. Deep sea clays have a similar isotopic composition that MORBs or granites, suggesting that isotopic composition of the dissolved Ge in rivers might not

  15. Hydrogen sulfide intoxication.

    PubMed

    Guidotti, Tee L

    2015-01-01

    Hydrogen sulfide (H2S) is a hazard primarily in the oil and gas industry, agriculture, sewage and animal waste handling, construction (asphalt operations and disturbing marshy terrain), and other settings where organic material decomposes under reducing conditions, and in geothermal operations. It is an insoluble gas, heavier than air, with a very low odor threshold and high toxicity, driven by concentration more than duration of exposure. Toxicity presents in a unique, reliable, and characteristic toxidrome consisting, in ascending order of exposure, of mucosal irritation, especially of the eye ("gas eye"), olfactory paralysis (not to be confused with olfactory fatigue), sudden but reversible loss of consciousness ("knockdown"), pulmonary edema (with an unusually favorable prognosis), and death (probably with apnea contributing). The risk of chronic neurcognitive changes is controversial, with the best evidence at high exposure levels and after knockdowns, which are frequently accompanied by head injury or oxygen deprivation. Treatment cannot be initiated promptly in the prehospital phase, and currently rests primarily on supportive care, hyperbaric oxygen, and nitrite administration. The mechanism of action for sublethal neurotoxicity and knockdown is clearly not inhibition of cytochrome oxidase c, as generally assumed, although this may play a role in overwhelming exposures. High levels of endogenous sulfide are found in the brain, presumably relating to the function of hydrogen sulfide as a gaseous neurotransmitter and immunomodulator. Prevention requires control of exposure and rigorous training to stop doomed rescue attempts attempted without self-contained breathing apparatus, especially in confined spaces, and in sudden release in the oil and gas sector, which result in multiple avoidable deaths. PMID:26563786

  16. Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

    NASA Astrophysics Data System (ADS)

    Nam, Ju Hyung; Alkis, Sabri; Nam, Donguk; Afshinmanesh, Farzaneh; Shim, Jaewoo; Park, Jin-Hong; Brongersma, Mark; Okyay, Ali Kemal; Kamins, Theodore I.; Saraswat, Krishna

    2015-04-01

    A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

  17. Temperature-dependant study of phosphorus ion implantation in germanium

    NASA Astrophysics Data System (ADS)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  18. Oxygen defect processes in silicon and silicon germanium

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  19. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  20. Ultra High-Rate Germanium (UHRGe) Modeling Status Report

    SciTech Connect

    Warren, Glen A.; Rodriguez, Douglas C.

    2012-06-07

    The Ultra-High Rate Germanium (UHRGe) project at Pacific Northwest National Laboratory (PNNL) is conducting research to develop a high-purity germanium (HPGe) detector that can provide both the high resolution typical of germanium and high signal throughput. Such detectors may be beneficial for a variety of potential applications ranging from safeguards measurements of used fuel to material detection and verification using active interrogation techniques. This report describes some of the initial radiation transport modeling efforts that have been conducted to help guide the design of the detector as well as a description of the process used to generate the source spectrum for the used fuel application evaluation.

  1. Field method for sulfide determination

    SciTech Connect

    Wilson, B L; Schwarser, R R; Chukwuenye, C O

    1982-01-01

    A simple and rapid method was developed for determining the total sulfide concentration in water in the field. Direct measurements were made using a silver/sulfide ion selective electrode in conjunction with a double junction reference electrode connected to an Orion Model 407A/F Specific Ion Meter. The method also made use of a sulfide anti-oxidant buffer (SAOB II) which consists of ascorbic acid, sodium hydroxide, and disodium EDTA. Preweighed sodium sulfide crystals were sealed in air tight plastic volumetric flasks which were used in standardization process in the field. Field standards were prepared by adding SAOB II to the flask containing the sulfide crystals and diluting it to the mark with deionized deaerated water. Serial dilutions of the standards were used to prepare standards of lower concentrations. Concentrations as low as 6 ppB were obtained on lake samples with a reproducibility better than +- 10%.

  2. Germanium Detectors in Homeland Security at PNNL

    SciTech Connect

    Stave, Sean C.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADES HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.

  3. Germanium detectors in homeland security at PNNL

    DOE PAGESBeta

    Stave, S.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADESmore » HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.« less

  4. Germanium detectors in homeland security at PNNL

    SciTech Connect

    Stave, S.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADES HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.

  5. Electron paramagnetic resonance at dislocations in germanium

    SciTech Connect

    Pakulis, E.J.

    1982-06-01

    The first observation of the paramagnetic resonance of electrons at dislocations in germanium single crystals is reported. Under subband gap optical excitation, two sets of lines are detected: four lines about the <111> axes with g/sub perpendicular to/ = 0.34 and g/sub parallel/ = 1.94, and 24 lines with g/sub perpendicular to/ = 0.73 and g/sub parallel/ = 1.89 about <111> axes with the six-fold 1.2/sup 0/ distortion. This represents the first measurement of the disortion angle of a dislocation dangling bond. The possibility that the distortion results from a Peierls transition along the dislocation line is discussed.

  6. Synthesis of silicon and germanium nanowires.

    SciTech Connect

    Clement, Teresa J.; Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  7. Reduction of Defects in Germanium-Silicon

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a

  8. Na-doped optical Germanium bulk crystals

    NASA Astrophysics Data System (ADS)

    Pekar, G. S.; Singaevsky, A. F.

    2012-09-01

    In an effort to develop a material for infrared (IR) optics with improved parameters, bulk crystals of optical germanium doped with Na have been first grown and studied. Single-crystalline and coarse-crystalline Ge:Na boules of different shapes and dimensions, up to 10 kg by weight, have been grown. Sodium was incorporated into the Ge crystal during the crystal growing from the melt. Despite the fact that Na contamination in the source material was not strictly controlled, the density of Na in the grown crystals determined by the neutron activation analysis as well as by the glow discharge mass spectrometry did not exceed 1015 cm-3. Just this value may be supposed to be close to the solubility limit of Na incorporated in Ge in the course of bulk crystal growth. A first demonstration of donor behavior of Na in bulk Ge crystals is made by means of a thermoelectric type of testing. An interstitial location of Na impurity has been verified by experiments on donor drift in the dc electric field. The crystals are grown with free electron density in the range from 5ṡ1013 to 4ṡ1014 cm-3 which is optimal for using Ge crystals as an optical material for fabricating passive elements of the IR technique. A comparison between the properties of Ge:Na crystals and Ge crystals doped with Sb, a conventional impurity in optical germanium, grown under the same technological conditions and from the same intrinsic Ge as a source material, revealed a number of advantages of Ge:Na crystals; among them, the higher transparency in the IR region, smaller radiation scattering and higher regular optical transmission, lower dislocation density, more uniform distribution of electrical and optical characteristics over the crystal volume, the identity of optical parameters in the single-crystalline, and coarse-crystalline boules. No degradation of optical elements fabricated from Ge:Na crystals was detected in the course of their commercial application, starting from 1998.

  9. Ultraprecision Machining Characteristics of Poly-Crystalline Germanium

    NASA Astrophysics Data System (ADS)

    Yan, Jiwang; Takahashi, Yasunori; Tamaki, Jun'Ichi; Kubo, Akihiko; Kuriyagawa, Tsunemoto; Sato, Yutaka

    Germanium is an excellent infrared optical material. On most occasions, single-crystalline germanium is used as optical lens substrate because its homogeneous structure is beneficial for fabricating uniform optical surfaces. In this work, we attempt to use poly crystals as lens substrates instead of single crystals, which may lead to a significant reduction in production cost. We conducted ultraprecision cutting experiments on poly-crystalline germanium to examine the microscopic machinability. The crystal orientations of specific crystal grains were characterized, and the machining characteristics of these crystal grains including surface textures, cutting forces, and grain boundary steps were investigated under various machining conditions. It was possible to produce uniformly ductile-cut surfaces cross all crystal grains by using an extremely small undeformed chip thickness (˜ 80nm) under negative tool rake angles (˜ -45°). This work indicates the possibility of fabricating high-quality infrared optical components from poly-crystalline germanium.

  10. Near-infrared emission from mesoporous crystalline germanium

    NASA Astrophysics Data System (ADS)

    Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

    2014-10-01

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  11. Near-infrared emission from mesoporous crystalline germanium

    SciTech Connect

    Boucherif, Abderraouf; Aimez, Vincent; Arès, Richard; Korinek, Andreas

    2014-10-15

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  12. Volcanogenic Massive Sulfide Deposit Density

    USGS Publications Warehouse

    Mosier, Dan L.; Singer, Donald A.; Berger, Vladimir I.

    2007-01-01

    A mineral-deposit density model for volcanogenic massive sulfide deposits was constructed from 38 well-explored control areas from around the world. Control areas contain at least one exposed volcanogenic massive sulfide deposit. The control areas used in this study contain 150 kuroko, 14 Urals, and 25 Cyprus massive sulfide subtypes of volcanogenic massive sulfide deposits. For each control area, extent of permissive rock, number of exposed volcanogenic massive sulfide deposits, map scale, deposit age, and deposit density were determined. The frequency distribution of deposit densities in these 38 control areas provides probabilistic estimates of the number of deposits for tracts that are permissive for volcanogenic massive sulfide deposits-90 percent of the control areas have densities of 100 or more deposits per 100,000 square kilometers, 50 percent of the control areas have densities of 700 or more deposits per 100,000 square kilometers, and 10 percent of the control areas have densities of 3,700 or more deposits per 100,000 square kilometers. Both map scale and the size of the control area are shown to be predictors of deposit density. Probabilistic estimates of the number of volcanogenic massive sulfide deposits can be made by conditioning the estimates on sizes of permissive area. The model constructed for this study provides a powerful tool for estimating the number of undiscovered volcanogenic massive sulfide deposits when conducting resource assessments. The value of these deposit densities is due to the consistency of these models with the grade and tonnage and the descriptive models. Mineral-deposit density models combined with grade and tonnage models allow reasonable estimates of the number, size, and grades of volcanogenic massive sulfide deposits to be made.

  13. Mimicking high-silica zeolites: highly stable germanium- and tin-rich zeolite-type chalcogenides.

    PubMed

    Lin, Qipu; Bu, Xianhui; Mao, Chengyu; Zhao, Xiang; Sasan, Koroush; Feng, Pingyun

    2015-05-20

    High-silica zeolites, as exemplified by ZSM-5, with excellent chemical and thermal stability, have generated a revolution in industrial catalysis. In contrast, prior to this work, high-silica-zeolite-like chalcogenides based on germanium/tin remained unknown, even after decades of research. Here six crystalline high-germanium or high-tin zeolite-type sulfides and selenides with four different topologies are reported. Their unprecedented framework compositions give these materials much improved thermal and chemical stability with high surface area (Langmuir surface area of 782 m(2)/g(-1)) comparable to or better than zeolites. Among them, highly stable CPM-120-ZnGeS allows for ion exchange with diverse metal or complex cations, resulting in fine-tuning in porosity, fast ion conductivity, and photoelectric response. Being among the most porous crystalline chalcogenides, CPM-120-ZnGeS (exchanged with Cs(+) ions) also shows reversible adsorption with high capacity and affinity for CO2 (98 and 73 cm(3) g(-1) at 273 and 298 K, respectively, isosteric heat of adsorption = 40.05 kJ mol(-1)). Moreover, CPM-120-ZnGeS could also function as a robust photocatalyst for water reduction to generate H2. The overall activity of H2 production from water, in the presence of Na2S-Na2SO3 as a hole scavenger, was 200 μmol h(-1)/(0.10 g). Such catalytic activity remained undiminished under illumination by UV light for as long as measured (200 h), demonstrating excellent resistance to photocorrosion even under intense UV radiation.

  14. Promoting Cell Proliferation Using Water Dispersible Germanium Nanowires

    PubMed Central

    Bezuidenhout, Michael; Liu, Pai; Singh, Shalini; Kiely, Maeve

    2014-01-01

    Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM), High resolution-TEM, and scanning electron microscope (SEM). Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence) which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth. PMID:25237816

  15. Modified silicon-germanium alloys with improved performance. [thermoelectric material

    NASA Technical Reports Server (NTRS)

    Pisharody, R. K.; Garvey, L. P.

    1978-01-01

    This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

  16. Protective infrared antireflection coating based on sputtered germanium carbide

    NASA Astrophysics Data System (ADS)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  17. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  18. Promoting cell proliferation using water dispersible germanium nanowires.

    PubMed

    Bezuidenhout, Michael; Liu, Pai; Singh, Shalini; Kiely, Maeve; Ryan, Kevin M; Kiely, Patrick A

    2014-01-01

    Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM), High resolution-TEM, and scanning electron microscope (SEM). Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence) which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

  19. A novel method for improving cerussite sulfidization

    NASA Astrophysics Data System (ADS)

    Feng, Qi-cheng; Wen, Shu-ming; Zhao, Wen-juan; Cao, Qin-bo; Lü, Chao

    2016-06-01

    Evaluation of flotation behavior, solution measurements, and surface analyses were performed to investigate the effects of chloride ion addition on the sulfidization of cerussite in this study. Micro-flotation tests indicate that the addition of chloride ions prior to sulfidization can significantly increase the flotation recovery of cerussite, which is attributed to the formation of more lead sulfide species on the mineral surface. Solution measurement results suggest that the addition of chloride ions prior to sulfidization induces the transformation of more sulfide ions from pulp solution onto the mineral surface by the formation of more lead sulfide species. X-ray diffraction and energy-dispersive spectroscopy indicate that more lead sulfide species form on the mineral surface when chloride ions are added prior to sulfidization. These results demonstrate that the addition of chloride ions prior to sulfidization can significantly improve the sulfidization of cerussite, thereby enhancing the flotation performance.

  20. Prevention of sulfide oxidation in sulfide-rich waste rock

    NASA Astrophysics Data System (ADS)

    Nyström, Elsa; Alakangas, Lena

    2015-04-01

    The ability to reduce sulfide oxidation in waste rock after mine closure is a widely researched area, but to reduce and/or inhibit the oxidation during operation is less common. Sulfide-rich (ca 30 % sulfur) waste rock, partially oxidized, was leached during unsaturated laboratory condition. Trace elements such as As and Sb were relatively high in the waste rock while other sulfide-associated elements such as Cu, Pb and Zn were low compared to common sulfide-rich waste rock. Leaching of unsaturated waste rock lowered the pH, from around six down to two, resulting in continuously increasing element concentrations during the leaching period of 272 days. The concentrations of As (65 mg/L), Cu (6.9 mg/L), Sb (1.2 mg/L), Zn (149 mg/L) and S (43 g/L) were strongly elevated at the end of the leaching period. Different alkaline industrial residues such as slag, lime kiln dust and cement kiln dust were added as solid or as liquid to the waste rock in an attempt to inhibit sulfide oxidation through neo-formed phases on sulfide surfaces in order to decrease the mobility of metals and metalloids over longer time scale. This will result in a lower cost and efforts of measures after mine closure. Results from the experiments will be presented.

  1. Apparatus for use in sulfide chemiluminescence detection

    DOEpatents

    Spurlin, S.R.; Yeung, E.S.

    1987-01-06

    A method is described for chemiluminescently determining a sulfide which is either hydrogen sulfide or methyl mercaptan by reacting the sulfide with chlorine dioxide at low pressure and under conditions which allow a longer reaction time in emission of a single photon for every two sulfide containing species, and thereafter, chemiluminescently detecting and determining the sulfide. The invention also relates not only to the detection method, but the novel chemical reaction and a specifically designed chemiluminescence detection cell for the reaction. 4 figs.

  2. Apparatus for use in sulfide chemiluminescence detection

    DOEpatents

    Spurlin, Stanford R.; Yeung, Edward S.

    1987-01-01

    A method of chemiluminescently determining a sulfide which is either hydrogen sulfide or methyl mercaptan by reacting the sulfide with chlorine dioxide at low pressure and under conditions which allow a longer reaction time in emission of a single photon for every two sulfide containing species, and thereafter, chemiluminescently detecting and determining the sulfide. The invention also relates not only to the detection method, but the novel chemical reaction and a specifically designed chemiluminescence detection cell for the reaction.

  3. Platinum metals magmatic sulfide ores.

    PubMed

    Naldrett, A J; Duke, J M

    1980-06-27

    Platinum-group elements (PGE) are mined predominantly from deposits that have formed by the segregation of molten iron-nickel-copper sulfides from silicate magmas. The absolute concentrations of PGE in sulfides from different deposits vary over a range of five orders of magnitude, whereas those of other chalcophile elements vary by factors of only 2 to 100. However, the relative proportions of the different PGE in a given deposit are systematically related to the nature of the parent magma. The absolute and relative concentrations of PGE in magmatic sulfides are explained in terms of the degree of partial melting of mantle peridotite required to produce the parent magma and the processes of batch equilibration and fractional segregation of sulfides. The Republic of South Africa and the U.S.S.R. together possess more than 97 percent of the world PGE reserves, but significant undeveloped resources occur in North America. The Stillwater complex in Montana is perhaps the most important example.

  4. Sulfide-mediated dehydrative glycosylation.

    PubMed

    Nguyen, H M; Chen, Y; Duron, S G; Gin, D Y

    2001-09-12

    The development of a new method for glycosylation with 1-hydroxy glycosyl donors employing dialkyl sulfonium reagents is described. The process employs the reagent combination of a dialkyl sulfide and triflic anhydride to effect anomeric bond constructions. This controlled dehydrative coupling of various C(1)-hemiacetal glycosyl donors and nucleophilic acceptors proceeds by way of a sulfide-to-sulfoxide oxidation process in which triflic anhydride serves as the oxidant.

  5. Chemical Bonding in Sulfide Minerals

    SciTech Connect

    Vaughan, David J.; Rosso, Kevin M.

    2006-08-01

    An understanding of chemical bonding and electronic structure in sulfide minerals is central to any attempt at understanding their crystal structures, stabilities and physical properties. It is also an essential precursor to understanding reactivity through modeling surface structure at the molecular scale. In recent decades, there have been remarkable advances in first principles (ab initio) methods for the quantitative calculation of electronic structure. These advances have been made possible by the very rapid development of high performance computers. Several review volumes that chart the applications of these developments in mineralogy and geochemistry are available (Tossell and Vaughan, 1992; Cygan and Kubicki, 2001). An important feature of the sulfide minerals is the diversity of their electronic structures, as evidenced by their electrical and magnetic properties (see Pearce et al. 2006, this volume). Thus, sulfide minerals range from insulators through semiconductors to metals, and exhibit every type of magnetic behavior. This has presented problems for those attempting to develop bonding models for sulfides, and also led to certain misconceptions regarding the kinds of models that may be appropriate. In this chapter, chemical bonding and electronic structure models for sulfides are reviewed with emphasis on more recent developments. Although the fully ab initio quantitative methods are now capable of a remarkable degree of sophistication in terms of agreement with experiment and potential to interpret and predict behavior with varying conditions, both qualitative and more simplistic quantitative approaches will also be briefly discussed. This is because we believe that the insights which they provide are still helpful to those studying sulfide minerals. In addition to the application of electronic structure models and calculations to solid sulfides, work on sulfide mineral surfaces (Rosso and Vaughan 2006a,b) and solution complexes and clusters (Rickard

  6. Hydrogen Sulfide Oxidation by Myoglobin.

    PubMed

    Bostelaar, Trever; Vitvitsky, Victor; Kumutima, Jacques; Lewis, Brianne E; Yadav, Pramod K; Brunold, Thomas C; Filipovic, Milos; Lehnert, Nicolai; Stemmler, Timothy L; Banerjee, Ruma

    2016-07-13

    Enzymes in the sulfur network generate the signaling molecule, hydrogen sulfide (H2S), from the amino acids cysteine and homocysteine. Since it is toxic at elevated concentrations, cells are equipped to clear H2S. A canonical sulfide oxidation pathway operates in mitochondria, converting H2S to thiosulfate and sulfate. We have recently discovered the ability of ferric hemoglobin to oxidize sulfide to thiosulfate and iron-bound hydropolysulfides. In this study, we report that myoglobin exhibits a similar capacity for sulfide oxidation. We have trapped and characterized iron-bound sulfur intermediates using cryo-mass spectrometry and X-ray absorption spectroscopy. Further support for the postulated intermediates in the chemically challenging conversion of H2S to thiosulfate and iron-bound catenated sulfur products is provided by EPR and resonance Raman spectroscopy in addition to density functional theory computational results. We speculate that the unusual sensitivity of skeletal muscle cytochrome c oxidase to sulfide poisoning in ethylmalonic encephalopathy, resulting from the deficiency in a mitochondrial sulfide oxidation enzyme, might be due to the concentration of H2S by myoglobin in this tissue. PMID:27310035

  7. Strained-germanium nanostructures for infrared photonics.

    PubMed

    Boztug, Cicek; Sánchez-Pérez, José R; Cavallo, Francesca; Lagally, Max G; Paiella, Roberto

    2014-04-22

    The controlled application of strain in crystalline semiconductors can be used to modify their basic physical properties to enhance performance in electronic and photonic device applications. In germanium, tensile strain can even be used to change the nature of the fundamental energy band gap from indirect to direct, thereby dramatically increasing the interband radiative efficiency and allowing population inversion and optical gain. For biaxial tension, the required strain levels (around 2%) are physically accessible but necessitate the use of very thin crystals. A particularly promising materials platform in this respect is provided by Ge nanomembranes, that is, single-crystal sheets with nanoscale thicknesses that are either completely released from or partially suspended over their native substrates. Using this approach, Ge tensilely strained beyond the expected threshold for direct-band gap behavior has recently been demonstrated, together with strong strain-enhanced photoluminescence and evidence of population inversion. We review the basic properties, state of the art, and prospects of tensilely strained Ge for infrared photonic applications.

  8. High Performance AR Coatings For Germanium

    NASA Astrophysics Data System (ADS)

    Willey, Ronald R.

    1989-02-01

    The theoretical design of a high efficiency antireflection coating on germanium for the 8 to 11.5 micrometer band is a relatively simple matter, but the reduction to practice of a high durability version of such a coating is not as easy. The first requirement is to reduce the reflection losses due to the very high index of refraction without adding significant absorptance or scattering. The second is to provide resistance to the environmental conditions which might be encountered by the product. The practical problems of stress and adhesion, hardness and abrasion resistance, and salt fog and humidity resistance pose some major challenges to the transformation from a design to a successful coating process. We describe some of our experiences with the evolution of the process from theory to practice, some of the problems encountered, and what we believe we have learned. Due to the extensive number of variables and the constraint on time and resources, the development could not be totally rigorous or exhaustive. The judgement and experience of the development staff was exercised to focus the resources on areas which were perceived to offer the best possibility of a solution to the requirements. The net result of the work described here was a process with considerably improved properties over the starting point of the development.

  9. Growth and properties of nanocrystalline germanium films

    SciTech Connect

    Niu Xuejun; Dalal, Vikram L.

    2005-11-01

    We report on the growth characteristics and structure of nanocrystalline germanium films using low-pressure plasma-assisted chemical vapor deposition process in a remote electron-cyclotron-resonance reactor. The films were grown from mixtures of germane and hydrogen at deposition temperatures varying between 130 deg. C and 310 deg. C. The films were measured for structure using Raman and x-ray spectroscopy. It is shown that the orientation of the film depends strongly upon the deposition conditions. Low-temperature growth leads to both <111> and <220> orientations, whereas at higher temperatures, the <220> grain strongly dominates. The Raman spectrum reveals a sharp crystalline peak at 300 cm{sup -1} and a high ratio between crystalline and amorphous peak that is at 285 cm{sup -1}. The grain size in the films is a strong function of hydrogen dilution, with higher dilutions leading to smaller grain sizes. Growth temperature also has a strong influence on grain size, with higher temperatures yielding larger grain sizes. From these results, which are seen to be compatible with the growth of nanocrystalline Si films, it is seen that the natural growth direction for the film is <220>, and that bonded hydrogen interferes with the growth of <220> grains. High hydrogen dilutions lead to more random nucleation.

  10. Optical properties of colloidal germanium nanocrystals

    SciTech Connect

    WILCOXON,JESS P.; PROVENCIO,PAULA P.; SAMARA,GEORGE A.

    2000-05-01

    Highly crystalline germanium (Ge) nanocrystals in the size range 2--10 nm were grown in inverse micelles and purified and size-separated by high pressure liquid chromatography with on-line optical and electrical diagnostics. The nanocrystals retain the diamond structure of bulk Ge down to at least 2.0 nm (containing about 150 Ge atoms). The background- and impurity-free extinction and photoluminescence (PL) spectra of these nanocrystals revealed rich structure which was interpreted in terms of the bandstructure of Ge shifted to higher energies by quantum confinement. The shifts ranged from {minus}0.1 eV to over 1 eV for the various transitions. PL in the range 350--700 nm was observed from nanocrystals 2--5 nm in size. The 2.0 nm nanocrystals yielded the most intense PL (at 420 nm) which is believed to be intrinsic and attributed to direct recombination at {Gamma}. Excitation at high energy (250 nm) populates most of the conduction bands resulting in competing recombination channels and the observed broad PL spectra.

  11. Detached Growth of Germanium and Germaniumsilicon

    NASA Technical Reports Server (NTRS)

    Dold, P.; Schweizer, M.; Szofran, F.; Benz, K. W.

    1999-01-01

    Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

  12. Tunnel current across linear homocatenated germanium chains

    SciTech Connect

    Matsuura, Yukihito

    2014-01-28

    The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e{sup −βL}, of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge–Ge bond length is longer than the Si–Si bond length.

  13. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    NASA Technical Reports Server (NTRS)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  14. The role of oxidized germanium in the growth of germanium nanoparticles on hafnia

    NASA Astrophysics Data System (ADS)

    Winkenwerder, Wyatt A.; Ekerdt, John G.

    2008-08-01

    The role oxidized germanium (GeO x) plays in germanium (Ge) nanoparticle growth on hafnia is reported. Oxide islands, in the form of hafnium germinate, form on hafnia during the initial stages of growth. The Ge adatoms are oxidized by background oxidants, such as water, only when they are in contact with the hafnia surface. Once a sufficient amount of hafnium germinate has formed, Ge nanoparticles nucleate such that nanoparticle growth proceeds by Ge growth on GeO x. Nanoparticles are not deposited on the hafnia but only on the interfacial oxide islands formed early in the growth process. Annealing hafnia in a silane ambient after Ge nanoparticle growth reduces the amount of GeO x and appears to transform it into a hafnium silicate. Furthermore, the electronic and/or chemical interaction between the Ge nanoparticles and the hafnia substrate is changed by the silane annealing step as reflected in the binding energy shift in the Ge 2p signal and the increased retention time of metal-oxide-semiconductor capacitors made from Ge nanoparticles and hafnia. Pretreating hafnia in silane leads to hafnium silicate islands and subsequent Ge nanoparticle growth proceeds on the silicate islands.

  15. Investigation of germanium Raman lasers for the mid-infrared.

    PubMed

    De Leonardis, Francesco; Troia, Benedetto; Soref, Richard A; Passaro, Vittorio M N

    2015-06-29

    In this paper we present a detailed theoretical investigation of integrated racetrack Raman lasers based on the germanium material system operating in the mid-infrared beyond the germanium two-photon absorption cut-off wavelength of 3.17 μm. The effective Raman gain has been estimated in waveguides based on germanium-on-silicon, germanium-on-SOI and germanium-on-Si3N4 technology platforms as a function of their crystallographic orientations. Furthermore, general design guidelines have been determined by means of a comparative analysis of Raman laser performance, i.e. the threshold power, polarization and directionality of the excited Stokes signals as a function of racetrack cavity length and directional-coupler dimensions. Finally, the emitted Raman laser power has been evaluated as a function of overall propagation losses and operative wavelengths up to 3.8 μm, while the time dynamics of Raman lasers has been simulated assuming continuous and pulse waves as input pump signals.

  16. Single-molecule conductance in atomically precise germanium wires.

    PubMed

    Su, Timothy A; Li, Haixing; Zhang, Vivian; Neupane, Madhav; Batra, Arunabh; Klausen, Rebekka S; Kumar, Bharat; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

    2015-09-30

    While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather than extended solids. Here we unveil a new approach for synthesizing atomically discrete wires of germanium and present the first conductance measurements of molecular germanium using a scanning tunneling microscope-based break-junction (STM-BJ) technique. Our findings show that germanium and silicon wires are nearly identical in conductivity at the molecular scale, and that both are much more conductive than aliphatic carbon. We demonstrate that the strong donor ability of C-Ge σ-bonds can be used to raise the energy of the anchor lone pair and increase conductance. Furthermore, the oligogermane wires behave as conductance switches that function through stereoelectronic logic. These devices can be trained to operate with a higher switching factor by repeatedly compressing and elongating the molecular junction.

  17. Resolving the germanium atomic weight disparity using multicollector ICPMS.

    PubMed

    Yang, Lu; Meija, Juris

    2010-05-15

    Two most recent mass spectrometric measurements of natural isotopic composition germanium gave discordant Ge atomic weight values of 72.6276(64)(k=2) and 72.6390(69)(k=2), respectively, a decade ago. Each measurement was performed with a different mass spectrometry platform, gas source isotope ratio mass spectrometry and thermal ionization mass spectrometry, respectively. Herein we report results obtained by multicollector inductively coupled plasma mass spectrometry yielding an atomic weight of germanium 72.6296(19)(k=2) which is in support of the upcoming 2009 Standard Atomic Weight adjustment by IUPAC. Germanium isotope ratios were calibrated using a regression mass bias correction model and NIST SRM 994 gallium isotopic reference material. In this model, no assumptions are made regarding the mass bias differences between gallium and germanium or between the isotopes of germanium. Isotope ratios of 0.5620(21), 0.7515(16), 0.2125(7), and 0.2121(12) were obtained for n((70)Ge)/n((74)Ge), n((72)Ge)/n((74)Ge), n((73)Ge)/n((74)Ge), and n((76)Ge)/n((74)Ge), respectively, with expanded uncertainties (k = 2) estimated in accordance with the ISO/BIPM Guide to the Expression of Uncertainty in Measurements.

  18. Single-molecule conductance in atomically precise germanium wires.

    PubMed

    Su, Timothy A; Li, Haixing; Zhang, Vivian; Neupane, Madhav; Batra, Arunabh; Klausen, Rebekka S; Kumar, Bharat; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

    2015-09-30

    While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather than extended solids. Here we unveil a new approach for synthesizing atomically discrete wires of germanium and present the first conductance measurements of molecular germanium using a scanning tunneling microscope-based break-junction (STM-BJ) technique. Our findings show that germanium and silicon wires are nearly identical in conductivity at the molecular scale, and that both are much more conductive than aliphatic carbon. We demonstrate that the strong donor ability of C-Ge σ-bonds can be used to raise the energy of the anchor lone pair and increase conductance. Furthermore, the oligogermane wires behave as conductance switches that function through stereoelectronic logic. These devices can be trained to operate with a higher switching factor by repeatedly compressing and elongating the molecular junction. PMID:26373928

  19. Reactivity of Sulfide Mineral Surfaces

    SciTech Connect

    Rosso, Kevin M.; Vaughan, David J.

    2006-08-01

    In the preceding chapter, the fundamental nature of sulfide mineral surfaces has been discussed, and the understanding we have of the ways in which the surface differs from a simple truncation of the bulk crystal structure reviewed. This naturally leads on to considering our understanding of sulfide surface chemistry, in the sense of how sulfide surfaces interact and react, particularly with gases and liquids. As noted elsewhere in this volume, research on sulfide mineral surfaces and surface reactivity is a relatively recent concern of mineralogists and geochemists, partly prompted by the availability of new imaging and spectroscopic methods, powerful computers and new computer algorithms. There has been a significantly longer history of sulfide mineral surface research associated with technologists working with, or within, the mining industry. Here, electrochemical methods, sometimes combined with analytical and spectroscopic techniques, have been used to probe surface chemistry. The motivation for this work has been to gain a better understanding of the controls of leaching reactions used to dissolve out metals from ores, or to understand the chemistry of the froth flotation systems used in concentrating the valuable (usually sulfide) minerals prior to metal extraction. The need for improved metal extraction technologies is still a major motivation for research on sulfide surfaces, but in the last couple of decades, new concerns have become important drivers for such work. In particular, much greater awareness of the negative environmental impact of acid and toxic metal-bearing waters derived from breakdown of sulfide minerals at former mining operations has prompted research on oxidation reactions, and on sorption of metals at sulfide surfaces. At the interface between fundamental geochemistry and industrial chemistry, the role of sulfide substrates in catalysis, and in the self-assembly and functionalization of organic molecules, has become an area of

  20. Sulfur and sulfides in chondrules

    NASA Astrophysics Data System (ADS)

    Marrocchi, Yves; Libourel, Guy

    2013-10-01

    The nature and distribution of sulfides within type I PO, POP and PP chondrules of the carbonaceous chondrite Vigarano (CV3) have been studied by secondary electron microscopy and electron microprobe. They occur predominantly as spheroidal blebs composed entirely of low-Ni iron sulfide (troilite, FeS) or troilite + magnetite but in less abundance in association with metallic Fe-Ni beads in opaque assemblages. Troilites are mainly located within the low-Ca pyroxene outer zone and their amounts increase with the abundance of low-Ca pyroxene within chondrules, suggesting co-crystallization of troilite and low-Ca pyroxene during high-temperature events. We show that sulfur concentration and sulfide occurrence in chondrules obey high temperature sulfur solubility and saturation laws. Depending on the fS2 and fO2 of the surrounding gas and on the melt composition, mainly the FeO content, sulfur dissolved in chondrule melts may eventually reach a concentration limit, the sulfur content at sulfide saturation (SCSS), at which an immiscible iron sulfide liquid separates from the silicate melt. The occurrence of both a silicate melt and an immiscible iron sulfide liquid is further supported by the non-wetting behavior of sulfides on silicate phases in chondrules due to the high interfacial tension between their precursor iron-sulfide liquid droplets and the surrounding silicate melt during the high temperature chondrule-forming event. The evolution of chondrule melts from PO to PP towards more silicic compositions, very likely due to high PSiO(g) of the surrounding nebular gas, induces saturation of FeS at much lower S content in PP than in PO chondrules, leading to the co-crystallization of iron sulfides and low-Ca pyroxenes. Conditions of co-saturation of low-Ca pyroxene and FeS are only achieved in non canonical environments characterized by high partial pressures of sulfur and SiO and redox conditions more oxidizing than IW-3. Fe and S mass balance calculations also

  1. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  2. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  3. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  4. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  5. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  6. Silicon-germanium technology program of the Jet Propulsion Laboratory.

    NASA Technical Reports Server (NTRS)

    De Winter, F.; Stapfer, G.

    1972-01-01

    The outer planetary exploration missions studied by the Jet Propulsion Laboratory require silicon-germanium radioisotope thermoelectric generators (RTGs) in which the factors of safety are as low as is compatible with the reliable satisfaction of the power needs. Work on silicon germanium sublimation performed at the Jet Propulsion Laboratory is presented. Analytical modeling work on the solid-diffusion process involved in the steady-state (free) sublimation of silicon germanium is described. Analytical predictions are made of the sublimation suppression which can be achieved by using a cover gas. A series of accelerated (high-temperature) tests which were performed on simulated hardware (using four SiGe couples) to study long-term sublimation and reaction mechanisms are also discussed.

  7. Germanium FCC structure from a colloidal crystal template

    SciTech Connect

    Miguez, H.; Meseguer, F.; Lopez, C.; Holgado, M.; Andreasen, G.; Mifsud, A.; Fornes, V.

    2000-05-16

    Here, the authors show a method to fabricate a macroporous structure in which the pores, essentially identical, arrange regularly in a face-centered cubic (FCC) lattice. The result is a network of air spheres in a germanium medium. This structure presents the highest dielectric contrast ({epsilon}{sub Ge}/{epsilon}{sub air} = 16) ever achieved in the optical regime in such periodic structures, which could result in important applications in photonics. The authors employ solid silica colloidal crystals (opals) as templates within which a cyclic germanium growth process is carried out. Thus, the three-dimensional periodicity of the host is inherited by the guest. Afterward, the silica is removed and a germanium opal replica is obtained.

  8. Moth's eye anti-reflection gratings on germanium freeform surfaces

    NASA Astrophysics Data System (ADS)

    Liu, Meng; Shultz, Jason A.; Owen, Joseph D.; Davies, Matthew A.; Suleski, Thomas J.

    2014-09-01

    Germanium is commonly used for optical components in the infrared, but the high refractive index of germanium causes significant losses due to Fresnel reflections. Anti-reflection (AR) surfaces based on subwavelength "moth's eye" gratings provide one means to significantly increase optical transmission. As found in nature, these gratings are conformal to the curved surfaces of lenslets in the eye of the moth. Engineered optical systems inspired by biological examples offer possibilities for increased performance and system miniaturization, but also introduce significant challenges to both design and fabrication. In this paper, we consider the design and fabrication of conformal moth's eye AR structures on germanium freeform optical surfaces, including lens arrays and Alvarez lenses. Fabrication approaches and limitations based on both lithography and multi-axis diamond machining are considered. Rigorous simulations of grating performance and approaches for simulation of conformal, multi-scale optical systems are discussed.

  9. Study on nanometric cutting of germanium by molecular dynamics simulation

    PubMed Central

    2013-01-01

    Three-dimensional molecular dynamics simulations are conducted to study the nanometric cutting of germanium. The phenomena of extrusion, ploughing, and stagnation region are observed from the material flow. The uncut thickness which is defined as the depth from bottom of the tool to the stagnation region is in proportion to the undeformed chip thickness on the scale of our simulation and is almost independent of the machined crystal plane. The cutting resistance on (111) face is greater than that on (010) face due to anisotropy of germanium. During nanometric cutting, both phase transformation from diamond cubic structure to β-Sn phase and direct amorphization of germanium occur. The machined surface presents amorphous structure. PMID:23289482

  10. Germanium based electrostatic quantum dots: design and characterization.

    NASA Astrophysics Data System (ADS)

    Mazzeo, Giovanni; Yablonovitch, Eli; Jiang, Hong-Wen

    2010-03-01

    While the less mature Germanium technology requires an extra effort for the realization of single electron quantum dots, unique properties of Germanium rich heterostructures together with spin coherence times comparable to Silicon, can justify the development of such new technology. We report our progresses on the formation of electrostatic quantum dots in Germanium. We employ an MOS-like structure with no modulation doping already successfully proven in Silicon devices. A two level gate stack is used: the top gate is positively biased to attract electrons while the lowers gates are negatively biased to form the quantum dot and attract holes in a transistor channel, used to detect the electrons in the adjacent quantum dot. Finite Element Method simulations are used to prove the concept of this hybrid holes-transistor/electron-QD device and estimate the sensitivity of the charge detection. Preliminary characterizations of quantum dot devices built with this structure are reported.

  11. Characterisation of a Broad Energy Germanium (BEGe) detector

    NASA Astrophysics Data System (ADS)

    Barrientos, D.; Boston, A. J.; Boston, H. C.; Quintana, B.; Sagrado, I. C.; Unsworth, C.; Moon, S.; Cresswell, J. R.

    2011-08-01

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of 241Am, 22Na and 137Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  12. Simulations for Tracking Cosmogenic Activation in Germanium and Copper

    SciTech Connect

    Aguayo, Estanislao; Kouzes, Richard T.; Orrell, John L.

    2011-11-01

    High-purity germanium (HPGe) detectors housed in copper cryostats and shielding materials are used in measurements of the extraordinarily rare nuclear decay process, neutrinoless double-beta decay (0νββ), and for dark matter searches. Cosmogenic production of 68Ge and 60Co in the germanium and copper represent an irreducible background to these experiments as the subsequent decays of these isotopes can mimic the signals of interest. These radioactive isotopes can be removed by chemical and/or isotopic separation, but begin to grow-in to the material after separation until the material is moved deep underground. This work is motivated by the need to have a reliable, experimentally benchmarked simulation tool for evaluating shielding materials used during transportation and near-surface manufacturing of experiment components. The resulting simulations tool has been used to enhance the effectiveness of an existing transport shield used to ship enriched germanium from the separations facility to the detector manufacturing facility.

  13. Next Generation Device Grade Silicon-Germanium on Insulator

    PubMed Central

    Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F.; Watts, John F.; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2015-01-01

    High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment. PMID:25656076

  14. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Vujisic, L.; Szofran, F. R.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years, especially under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 micrometers, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5 mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 micrometers. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  15. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Motakef, S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years especially, under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 microns, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 microns. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  16. Sulfide Stability of Planetary Basalts

    NASA Technical Reports Server (NTRS)

    Caiazza, C. M.; Righter, K.; Gibson, E. K., Jr.; Chesley, J. T.; Ruiz, J.

    2004-01-01

    The isotopic system, 187Re 187Os, can be used to determine the role of crust and mantle in magma genesis. In order to apply the system to natural samples, we must understand variations in Re/Os concentrations. It is thought that low [Os] and [Re] in basalts can be attributed to sulfide (FeS) saturation, as Re behaves incompatibly to high degrees of evolution until sulfide saturation occurs [1]. Previous work has shown that lunar basalts are sulfide under-saturated, and mid-ocean ridge, ocean-island and Martian (shergottites) basalts are saturated [2,3]. However, little is known about arc basalts. In this study, basaltic rocks were analyzed across the Trans-Mexican Volcanic Belt.

  17. Imaging germanium telescope array for gamma-rays (IGETAGRAY)

    SciTech Connect

    Hailey, C.J.; Ziock, K.P. ); Harrison, F.A. Space Sciences Laboratory, University of California, Berkeley, CA ); Fleischmann, J. )

    1990-08-10

    The Germanium Drift Chamber (GDC) is a gamma-ray detector with excellent energy and one-dimensional spatial resolution. Due to recent developments in coded aperture optics, it is feasible to couple one-dimensional coded apertures and GDCs in a special array geometry producing a telescope with true two-dimensional imaging. This Imaging Germanium Telescope Array for Gamma-rays (IGETAGRAY) has made a comparable field of view and sensitivity to true two-dimensional systems, but simplified engineering requirements. IGETAGRAY will make possible high sensitivity spectroscopy of the gamma-ray sky.

  18. Imaging Germanium Telescope Array for Gamma-Rays (IGETAGRAY)

    SciTech Connect

    Hailey, C.J.; Ziock, K.P. ); Harrison, F.A. . Dept. of Physics California Univ., Berkeley, CA . Space Sciences Lab.); Fleischmann, J. )

    1990-01-01

    The Germanium Drift Chamber (GDC) is a gamma-ray detector with excellent energy and one-dimensional spatial resolution. Due to recent developments in coded aperture optics, it is feasible to couple one-dimensional coded apertures and GDCs in a special array geometry producing a telescope with true two-dimensional imaging. This Imaging Germanium Telescope Array for Gamma-Rays (IGETAGRAY) has made a comparable field of view and sensitivity to true two-dimensional systems, but simplified engineering requirements. IGETAGRAY will make possible high sensitivity spectroscopy of the gamma-ray sky. 5 refs., 1 fig.

  19. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  20. The Novel Synthesis of Silicon and Germanium Nanocrystallites

    SciTech Connect

    Kauzlarich, S M; Liu, Q; Yin, S C; Lee, W H; Taylor, B

    2001-04-03

    Interest in the synthesis of semiconductor nanoparticles has been generated by their unusual optical and electronic properties arising from quantum confinement effects. We have synthesized silicon and germanium nanoclusters by reacting Zintl phase precursors with either silicon or germanium tetrachloride in various solvents. Strategies have been investigated to stabilize the surface, including reactions with RLi and MgBrR (R = alkyl). This synthetic method produces group IV nanocrystals with passivated surfaces. These nanoparticle emit over a very large range in the visible region. These particles have been characterized using HRTEM, FTIR, UV-Vis, solid state NMR, and fluorescence. The synthesis and characterization of these nanoclusters will be presented.

  1. Characterisation of two AGATA asymmetric high purity germanium capsules

    NASA Astrophysics Data System (ADS)

    Colosimo, S. J.; Moon, S.; Boston, A. J.; Boston, H. C.; Cresswell, J. R.; Harkness-Brennan, L.; Judson, D. S.; Lazarus, I. H.; Nolan, P. J.; Simpson, J.; Unsworth, C.

    2015-02-01

    The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

  2. A Reaction Involving Oxygen and Metal Sulfides.

    ERIC Educational Resources Information Center

    Hill, William D. Jr.

    1986-01-01

    Describes a procedure for oxygen generation by thermal decomposition of potassium chlorate in presence of manganese dioxide, reacted with various sulfides. Provides a table of sample product yields for various sulfides. (JM)

  3. Nickel sulfide hollow whisker formation

    SciTech Connect

    Holcomb, G.R.; Cramer, S.D.

    1997-02-01

    Hollow, high-aspect-ratio nickel sulfide whiskers were formed during aqueous corrosion experiments at 250 C by the US Department of Energy. The whiskers grew radially from Teflon thread at the waterline in acidic sodium sulfate solutions containing chloride additions. The hollow morphology is consistent with that reported for the mineral millerite found in nature in hematite cavities. The data suggest that iron and chloride impurities are necessary for the observed whisker structure. Hollow nickel sulfide whiskers were observed only in high-temperature corrosion experiments conducted on stainless steels; they were not observed in similar experiments on nickel-base alloys.

  4. Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals.

    PubMed

    Wang, Wenzhong; Wang, Keda; Han, Daxing; Poudel, Bed; Wang, Xiaowei; Wang, D Z; Zeng, Baoqing; Ren, Z F

    2007-02-21

    We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 µm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (I(PL)) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the I(PL) is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO(2) layer and the bulk crystal Ge is responsible for the near-infrared PL.

  5. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

  6. 30 CFR 250.604 - Hydrogen sulfide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 2 2010-07-01 2010-07-01 false Hydrogen sulfide. 250.604 Section 250.604... OPERATIONS IN THE OUTER CONTINENTAL SHELF Oil and Gas Well-Workover Operations § 250.604 Hydrogen sulfide. When a well-workover operation is conducted in zones known to contain hydrogen sulfide (H2S) or...

  7. 30 CFR 250.504 - Hydrogen sulfide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 2 2010-07-01 2010-07-01 false Hydrogen sulfide. 250.504 Section 250.504... OPERATIONS IN THE OUTER CONTINENTAL SHELF Oil and Gas Well-Completion Operations § 250.504 Hydrogen sulfide. When a well-completion operation is conducted in zones known to contain hydrogen sulfide (H2S) or...

  8. 30 CFR 250.808 - Hydrogen sulfide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 2 2010-07-01 2010-07-01 false Hydrogen sulfide. 250.808 Section 250.808... OPERATIONS IN THE OUTER CONTINENTAL SHELF Oil and Gas Production Safety Systems § 250.808 Hydrogen sulfide. Production operations in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of...

  9. Nanostructured metal sulfides for energy storage.

    PubMed

    Rui, Xianhong; Tan, Huiteng; Yan, Qingyu

    2014-09-01

    Advanced electrodes with a high energy density at high power are urgently needed for high-performance energy storage devices, including lithium-ion batteries (LIBs) and supercapacitors (SCs), to fulfil the requirements of future electrochemical power sources for applications such as in hybrid electric/plug-in-hybrid (HEV/PHEV) vehicles. Metal sulfides with unique physical and chemical properties, as well as high specific capacity/capacitance, which are typically multiple times higher than that of the carbon/graphite-based materials, are currently studied as promising electrode materials. However, the implementation of these sulfide electrodes in practical applications is hindered by their inferior rate performance and cycling stability. Nanostructures offering the advantages of high surface-to-volume ratios, favourable transport properties, and high freedom for the volume change upon ion insertion/extraction and other reactions, present an opportunity to build next-generation LIBs and SCs. Thus, the development of novel concepts in material research to achieve new nanostructures paves the way for improved electrochemical performance. Herein, we summarize recent advances in nanostructured metal sulfides, such as iron sulfides, copper sulfides, cobalt sulfides, nickel sulfides, manganese sulfides, molybdenum sulfides, tin sulfides, with zero-, one-, two-, and three-dimensional morphologies for LIB and SC applications. In addition, the recently emerged concept of incorporating conductive matrices, especially graphene, with metal sulfide nanomaterials will also be highlighted. Finally, some remarks are made on the challenges and perspectives for the future development of metal sulfide-based LIB and SC devices. PMID:25073046

  10. Nanostructured metal sulfides for energy storage.

    PubMed

    Rui, Xianhong; Tan, Huiteng; Yan, Qingyu

    2014-09-01

    Advanced electrodes with a high energy density at high power are urgently needed for high-performance energy storage devices, including lithium-ion batteries (LIBs) and supercapacitors (SCs), to fulfil the requirements of future electrochemical power sources for applications such as in hybrid electric/plug-in-hybrid (HEV/PHEV) vehicles. Metal sulfides with unique physical and chemical properties, as well as high specific capacity/capacitance, which are typically multiple times higher than that of the carbon/graphite-based materials, are currently studied as promising electrode materials. However, the implementation of these sulfide electrodes in practical applications is hindered by their inferior rate performance and cycling stability. Nanostructures offering the advantages of high surface-to-volume ratios, favourable transport properties, and high freedom for the volume change upon ion insertion/extraction and other reactions, present an opportunity to build next-generation LIBs and SCs. Thus, the development of novel concepts in material research to achieve new nanostructures paves the way for improved electrochemical performance. Herein, we summarize recent advances in nanostructured metal sulfides, such as iron sulfides, copper sulfides, cobalt sulfides, nickel sulfides, manganese sulfides, molybdenum sulfides, tin sulfides, with zero-, one-, two-, and three-dimensional morphologies for LIB and SC applications. In addition, the recently emerged concept of incorporating conductive matrices, especially graphene, with metal sulfide nanomaterials will also be highlighted. Finally, some remarks are made on the challenges and perspectives for the future development of metal sulfide-based LIB and SC devices.

  11. 30 CFR 250.808 - Hydrogen sulfide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 2 2012-07-01 2012-07-01 false Hydrogen sulfide. 250.808 Section 250.808 Mineral Resources BUREAU OF SAFETY AND ENVIRONMENTAL ENFORCEMENT, DEPARTMENT OF THE INTERIOR OFFSHORE OIL... § 250.808 Hydrogen sulfide. Production operations in zones known to contain hydrogen sulfide (H2S) or...

  12. 30 CFR 250.604 - Hydrogen sulfide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 2 2011-07-01 2011-07-01 false Hydrogen sulfide. 250.604 Section 250.604...-Workover Operations § 250.604 Hydrogen sulfide. When a well-workover operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined...

  13. 30 CFR 250.504 - Hydrogen sulfide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 2 2011-07-01 2011-07-01 false Hydrogen sulfide. 250.504 Section 250.504...-Completion Operations § 250.504 Hydrogen sulfide. When a well-completion operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined...

  14. 30 CFR 250.808 - Hydrogen sulfide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 2 2014-07-01 2014-07-01 false Hydrogen sulfide. 250.808 Section 250.808 Mineral Resources BUREAU OF SAFETY AND ENVIRONMENTAL ENFORCEMENT, DEPARTMENT OF THE INTERIOR OFFSHORE OIL... § 250.808 Hydrogen sulfide. Production operations in zones known to contain hydrogen sulfide (H2S) or...

  15. 30 CFR 250.808 - Hydrogen sulfide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 2 2013-07-01 2013-07-01 false Hydrogen sulfide. 250.808 Section 250.808 Mineral Resources BUREAU OF SAFETY AND ENVIRONMENTAL ENFORCEMENT, DEPARTMENT OF THE INTERIOR OFFSHORE OIL... § 250.808 Hydrogen sulfide. Production operations in zones known to contain hydrogen sulfide (H2S) or...

  16. Nanostructured metal sulfides for energy storage

    NASA Astrophysics Data System (ADS)

    Rui, Xianhong; Tan, Huiteng; Yan, Qingyu

    2014-08-01

    Advanced electrodes with a high energy density at high power are urgently needed for high-performance energy storage devices, including lithium-ion batteries (LIBs) and supercapacitors (SCs), to fulfil the requirements of future electrochemical power sources for applications such as in hybrid electric/plug-in-hybrid (HEV/PHEV) vehicles. Metal sulfides with unique physical and chemical properties, as well as high specific capacity/capacitance, which are typically multiple times higher than that of the carbon/graphite-based materials, are currently studied as promising electrode materials. However, the implementation of these sulfide electrodes in practical applications is hindered by their inferior rate performance and cycling stability. Nanostructures offering the advantages of high surface-to-volume ratios, favourable transport properties, and high freedom for the volume change upon ion insertion/extraction and other reactions, present an opportunity to build next-generation LIBs and SCs. Thus, the development of novel concepts in material research to achieve new nanostructures paves the way for improved electrochemical performance. Herein, we summarize recent advances in nanostructured metal sulfides, such as iron sulfides, copper sulfides, cobalt sulfides, nickel sulfides, manganese sulfides, molybdenum sulfides, tin sulfides, with zero-, one-, two-, and three-dimensional morphologies for LIB and SC applications. In addition, the recently emerged concept of incorporating conductive matrices, especially graphene, with metal sulfide nanomaterials will also be highlighted. Finally, some remarks are made on the challenges and perspectives for the future development of metal sulfide-based LIB and SC devices.

  17. Novel approach for n-type doping of HVPE gallium nitride with germanium

    NASA Astrophysics Data System (ADS)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  18. Platinum metals magmatic sulfide ores.

    PubMed

    Naldrett, A J; Duke, J M

    1980-06-27

    Platinum-group elements (PGE) are mined predominantly from deposits that have formed by the segregation of molten iron-nickel-copper sulfides from silicate magmas. The absolute concentrations of PGE in sulfides from different deposits vary over a range of five orders of magnitude, whereas those of other chalcophile elements vary by factors of only 2 to 100. However, the relative proportions of the different PGE in a given deposit are systematically related to the nature of the parent magma. The absolute and relative concentrations of PGE in magmatic sulfides are explained in terms of the degree of partial melting of mantle peridotite required to produce the parent magma and the processes of batch equilibration and fractional segregation of sulfides. The Republic of South Africa and the U.S.S.R. together possess more than 97 percent of the world PGE reserves, but significant undeveloped resources occur in North America. The Stillwater complex in Montana is perhaps the most important example. PMID:17796685

  19. p-Chlorophenyl methyl sulfide

    Integrated Risk Information System (IRIS)

    p - Chlorophenyl methyl sulfide ; CASRN 123 - 09 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for N

  20. Transition metal sulfide loaded catalyst

    DOEpatents

    Maroni, V.A.; Iton, L.E.; Pasterczyk, J.W.; Winterer, M.; Krause, T.R.

    1994-04-26

    A zeolite-based catalyst is described for activation and conversion of methane. A zeolite support includes a transition metal (Mo, Cr or W) sulfide disposed within the micropores of the zeolite. The catalyst allows activation and conversion of methane to C[sub 2]+ hydrocarbons in a reducing atmosphere, thereby avoiding formation of oxides of carbon.

  1. Transition metal sulfide loaded catalyst

    DOEpatents

    Maroni, Victor A.; Iton, Lennox E.; Pasterczyk, James W.; Winterer, Markus; Krause, Theodore R.

    1994-01-01

    A zeolite based catalyst for activation and conversion of methane. A zeolite support includes a transition metal (Mo, Cr or W) sulfide disposed within the micropores of the zeolite. The catalyst allows activation and conversion of methane to C.sub.2 + hydrocarbons in a reducing atmosphere, thereby avoiding formation of oxides of carbon.

  2. Modified matrix volatilization setup for characterization of high purity germanium.

    PubMed

    Meruva, Adisesha Reddy; Raparthi, Shekhar; Kumar, Sunil Jai

    2016-01-01

    Modified matrix volatilization (MV) method has been described to characterize high purity germanium material of 7 N (99.99999%) purity. Transport of both, the chlorine gas generated in-situ in this method and the argon gas (carrier) is fine controlled by means of a mass flow controller. This enabled both uniform reaction of chlorine gas with the germanium matrix and smooth removal of germanium matrix as its chloride. This resulted in improvement in the reproducibility of the analytical results. The use of quartz reaction vessel has lead to the reduction in the process blank levels. The combined effect of these modifications in the MV setup has resulted in very consistent and low process blanks and hence improved detection limits of this method. Applicability of the method has been expanded to rare earth elements and other elements after examining their recoveries. The quantification is done by using inductively coupled plasma quadrupole mass spectrometer (ICP-QMS) and continuum source graphite furnace atomic absorption spectrometry (CS-GFAAS). In the absence of certified reference materials for high pure germanium, the accuracy of the method is established by spike recovery tests. The precision of the method has been found to vary from 1 to 30% for concentrations between 1 and 30 ng g(-1). The limits of detection (LOD) for the target analytes are found to be between 18 and 0.033 ng g(-1). PMID:26695261

  3. Discovery of gallium, germanium, lutetium, and hafnium isotopes

    SciTech Connect

    Gross, J.L.; Thoennessen, M.

    2012-09-15

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is described here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  4. Active noise canceling system for mechanically cooled germanium radiation detectors

    DOEpatents

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  5. Modified matrix volatilization setup for characterization of high purity germanium.

    PubMed

    Meruva, Adisesha Reddy; Raparthi, Shekhar; Kumar, Sunil Jai

    2016-01-01

    Modified matrix volatilization (MV) method has been described to characterize high purity germanium material of 7 N (99.99999%) purity. Transport of both, the chlorine gas generated in-situ in this method and the argon gas (carrier) is fine controlled by means of a mass flow controller. This enabled both uniform reaction of chlorine gas with the germanium matrix and smooth removal of germanium matrix as its chloride. This resulted in improvement in the reproducibility of the analytical results. The use of quartz reaction vessel has lead to the reduction in the process blank levels. The combined effect of these modifications in the MV setup has resulted in very consistent and low process blanks and hence improved detection limits of this method. Applicability of the method has been expanded to rare earth elements and other elements after examining their recoveries. The quantification is done by using inductively coupled plasma quadrupole mass spectrometer (ICP-QMS) and continuum source graphite furnace atomic absorption spectrometry (CS-GFAAS). In the absence of certified reference materials for high pure germanium, the accuracy of the method is established by spike recovery tests. The precision of the method has been found to vary from 1 to 30% for concentrations between 1 and 30 ng g(-1). The limits of detection (LOD) for the target analytes are found to be between 18 and 0.033 ng g(-1).

  6. Solution-processable white-light-emitting germanium nanocrystals

    SciTech Connect

    Shirahata, Naoto

    2014-06-01

    This paper describes an efficient chemical route for the synthesis of visible light emitting nanocrystals of germanium (ncGe). The synthesis started by heating Ge(II) iodide at 300 °C in argon atmosphere. Spectroscopic characterizations confirmed the formation of diamond cubic lattice structures of ncGe. By grafting hydrophobic chains on the ncGe surface, the dispersions in nonpolar solvents of the ncGe became very stable. The as-synthesized ncGe showed the bluish white photoluminescence (PL) feature, but it was found that the PL spectrum is composed of many different emission spectra. Therefore, the color-tuning of white light emission is demonstrated through the witting removal of extra ncGe with unfavorable emission feature by making full use of column chromatographic techniques. - Highlights: • Visible light emitting nanocrystals of germanium was synthesized by chemical reduction of germanium iodide. • White light emission was achieved by control over size distribution of germanium nanocrystals. • Tuning the color of white light was achieved by separation of nanocrystals by emission.

  7. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  8. Substitution of Germanium for Boron in Plant Growth 1

    PubMed Central

    McIlrath, Wayne J.; Skok, John

    1966-01-01

    The observation was confirmed that the addition of germanium dioxide (soluble form) to the nutrient solution can delay for a short time the appearance of boron deficiency symptoms on the shoots of sunflower plants (Helianthus annuus L.). This appeared to be true, however, only under growing conditions in which the plants had a low boron requirement. The delay in the appearance of boron deficiency symptoms by administering germanium was demonstrated in sunflower plants ranging in age from 7 to 20 days. This effect was noted whether the germanium was administered prior to or at the time the plants were transferred to minus-boron nutrient solution. It is proposed that germanium does not truly substitute for boron in metabolic processes of the plant but rather functions through increasing the mobility of soluble boron within the plant and in binding nonmetabolic polyhydroxyl sites thus serving in a sparing role for the limited quantity of soluble boron in the growth centers. Images Fig. 1 PMID:16656385

  9. The 100 micron detector development program. [gallium doped germanium photoconductors

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1976-01-01

    An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.

  10. Large diameter germanium single crystals for infrared optics.

    NASA Astrophysics Data System (ADS)

    Gafni, G.; Azoulay, M.; Shiloh, C.; Noter, Y.; Saya, A.; Galron, H.; Roth, M.

    1989-09-01

    Large single crystals, up to 200 mm in diameter, of high optical quality germanium have been grown by the Czochralski technique. Postgrowth thermal treatment improves the optical homogeneity and reduces optical losses, as shown by measurements of refractive index gradients and modulation transfer function (MTF). A new approach for the piecewise combination of interferograms, as well as a polychromatic treatment of MTF, is presented.

  11. Dangling-bond defects and hydrogen passivation in germanium

    NASA Astrophysics Data System (ADS)

    Weber, Justin R.

    2008-03-01

    The application of germanium in complementary metal-oxide semiconductor (CMOS) technology is hampered by high interface-state densities, the microscopic origin of which has remained elusive. Using first-principles calculations, we have investigated the atomic and electronic structure of prototype germanium dangling-bond defects [1]. The computational approach is based on density functional theory, and in order to overcome band-gap problems we have also performed quasiparticle calculations based on the GW approach. Surprisingly, the germanium dangling bonds give rise to electronic levels below the valence-band maximum. They therefore occur exclusively in the negative charge state, explaining why they have eluded observation with electron spin resonance. The associated fixed charge is likely responsible for threshold-voltage shifts and poor performance of n-channel transistors. At silicon/silicon dioxide interfaces, hydrogen is successfully used to passivate dangling-bond defects. We have therefore also investigated the interaction of hydrogen with germanium. In contrast to silicon and other semiconductors in which hydrogen behaves as an amphoteric impurity, interstitial hydrogen in germanium is stable only in the negative charge state, i.e., it behaves exclusively as an acceptor. Passivation of dangling bonds by hydrogen will therefore be ineffective, again explaining experimental observations. Other cases where unusual interfacial defects and problems with hydrogen passivation may occur will be discussed. Work performed in collaboration with A. Janotti, P. Rinke, and C. G. Van de Walle, and supported by the Semiconductor Research Corporation. 1. J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 91, 142101 (2007).

  12. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Motakef, S.; Vujisic, L. J.; Croell, A.; Dold, P.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have

  13. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash.

    PubMed

    Zhang, Lingen; Xu, Zhenming

    2016-07-15

    The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173K and 10Pa with 10wt% coke addition for 40min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473K, 1-10Pa and heating time 40min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes.

  14. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash.

    PubMed

    Zhang, Lingen; Xu, Zhenming

    2016-07-15

    The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173K and 10Pa with 10wt% coke addition for 40min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473K, 1-10Pa and heating time 40min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes. PMID:27015376

  15. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    PubMed

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content. PMID:27483856

  16. Marine diagenesis of hydrothermal sulfide

    SciTech Connect

    Moammar, M.O.

    1985-01-01

    An attempt is made to discuss the artificial and natural oxidation and hydrolysis of hydrothermal sulfide upon interaction with normal seawater. Synthetic and natural ferrosphalerite particles used in kinetic oxidation and hydrolysis studies in seawater develop dense, crystalline coatings consisting of ordered and ferrimagnetic delta-(Fe, Zn)OOH. Due to the formation of this reactive diffusion barrier, the release of Zn into solution decreases rapidly, and sulfide oxidation is reduced to a low rate determined by the diffusion of oxygen through the oxyhydroxide film. This also acts as an efficient solvent for ions such as Zn/sup 2 +/, Ca/sup 2 +/, and possibly Cd/sup 2 +/, which contribute to the stabilization of the delta-FeOOH structure. The oxidation of sulfide occurs in many seafloor spreading areas, such as 21/sup 0/N on the East Pacific Ridge. In these areas the old surface of the sulfide chimneys are found to be covered by an orange stain, and sediment near the base of nonactive vents is also found to consist of what has been referred to as amorphous iron oxide and hydroxide. This thesis also discusses the exceedingly low solubility of zinc in seawater, from delta-(Fe, Zn)OOH and the analogous phase (zinc-ferrihydroxide) and the zinc exchange minerals, 10-A manganate and montmorillonite. The concentrations of all four are of the same magnitude (16, 36.4, and 12 nM, respectively) as the zinc concentration in deep ocean water (approx. 10 nM), which suggests that manganates and montmorillonite with iron oxyhydroxides control zinc concentration in the deep ocean.

  17. Sulfide smelting using Ausmelt technology

    NASA Astrophysics Data System (ADS)

    Mounsey, Edward N.; Robilliard, Ken R.

    1994-08-01

    Over the past decade, Ausmelt has been developing the top submerged lancing process for the smelting of sulfidic ores to recover such metals as copper, lead, silver, tin, antimony, and nickel as well as for separation of minor elements such as arsenic, antimony, and bismuth. Development has taken place in Ausmelt's pilot plant in Dandenong, near Melbourne, Australia. A number of projects have proceeded to commercial-scale operation. This paper reviews developments at both the pilot and commercial scales.

  18. Metal sulfide for battery applications

    SciTech Connect

    Guidotti, R.A.

    1988-01-01

    A number of metal sulfides can be used in batteries as a cathode (reducible) material as part of an electrochemical couple to provide energy. There are a number of physical and chemical characteristics that can be evaluated for screening potential candidates for use in batteries. These include: cell potential vs. Li, thermal and chemical stability, electrical conductivity, allotropic form (phase), reaction kinetics during discharge, type of discharge mechanism, and material rechargeability. These are reviewed in general, with emphasis on sulfides of copper, iron, and molybdenum which are currently being used as cathodes in Li and Li-alloy batteries. The presence of impurities can adversely impact performance when naturally occurring sulfide minerals are used for battery applications. Sandia National Laboratories uses natural pyrite (FeS2) for its high-temperature, thermally activated Li(Si)/FeS2 batteries. The purification and processing procedures for the FeS2 involves both chemical and physical methods. Flotation was found to yield comparable results as HF leaching for removal of silica, but without the negative health and environmental concerns associated with this technique. 11 refs., 5 figs., 6 tabs.

  19. Chemical dissolution of sulfide minerals

    USGS Publications Warehouse

    Chao, T.T.; Sanzolone, R.F.

    1977-01-01

    Chemical dissolution treatments involving the use of aqua regia, 4 N HNO3, H2O2-ascorbic acid, oxalic acid, KClO3+HCl, and KClO3+HCl followed by 4 N HNO3 were applied to specimens of nine common sulfide minerals (galena, chalcopyrite, cinnabar, molybdenite, orpiment, pyrite, stibnite, sphalerite, and tetrahedrite) mixed individually with a clay loam soil. The resultant decrease in the total sulfur content of the mixture, as determined by using the Leco induction furnace, was used to evaluate the effectiveness of each chemical treatment. A combination of KClO3+HCl followed by 4 N HNO3 boiling gently for 20 min has been shown to be very effective in dissolving all the sulfide minerals. This treatment is recommended to dissolve metals residing in sulfide minerals admixed with secondary weathering products, as one step in a fractionation scheme whereby metals in soluble and adsorbed forms, and those associated with organic materials and secondary oxides, are first removed by other chemical extractants.

  20. Sulfide-Driven Microbial Electrosynthesis

    SciTech Connect

    Gong, YM; Ebrahim, A; Feist, AM; Embree, M; Zhang, T; Lovley, D; Zengler, K

    2013-01-01

    Microbial electrosynthesis, the conversion of carbon dioxide to organic molecules using electricity, has recently been demonstrated for acetogenic microorganisms, such as Sporomusa ovata. The energy for reduction of carbon dioxide originates from the hydrolysis of water on the anode, requiring a sufficiently low potential. Here we evaluate the use of sulfide as an electron source for microbial electrosynthesis. Abiotically oxidation of sulfide on the anode yields two electrons. The oxidation product, elemental sulfur, can be further oxidized to sulfate by Desulfobulbus propionicus, generating six additional electrons in the process. The eight electrons generated from the combined abiotic and biotic steps were used to reduce carbon dioxide to acetate on a graphite cathode by Sporomusa ovata at a rate of 24.8 mmol/day.m(2). Using a strain of Desulfuromonas as biocatalyst on the anode resulted in an acetate production rate of 49.9 mmol/day.m(2), with a Coulombic efficiency of over 90%. These results demonstrate that sulfide can serve effectively as an alternative electron donor for microbial electrosynthesis.

  1. Ionization efficiency study for low energy nuclear recoils in germanium

    NASA Astrophysics Data System (ADS)

    Barker, D.; Wei, W.-Z.; Mei, D.-M.; Zhang, C.

    2013-08-01

    We used the internal conversion (E0 transition) of germanium-72 to indirectly measure the low energy nuclear recoils of germanium. Together with a reliable Monte Carlo package, in which we implement the internal conversion process, the data was compared to the Lindhard (k = 0.159) and Barker-Mei models. A shape analysis indicates that both models agree well with data in the region of interest within 4%. The most probable value (MPV) of the nuclear recoils obtained from the shape analysis is 17.5 ± 0.12 (sys) ±0.035 (stat) keV with an average path-length of 0.014 μm.

  2. High temperature material interactions of thermoelectric systems using silicon germanium.

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1973-01-01

    The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

  3. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    SciTech Connect

    Nathan Robert Classen

    2002-12-31

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular {beta} C-H insertion mechanism.

  4. Germanium as negative electrode material for sodium-ion batteries

    SciTech Connect

    Baggetto, Loic; Keum, Jong Kahk; Browning, Jim; Veith, Gabriel M

    2013-01-01

    Germanium electrodes show a reversible Na-ion reaction at potentials of 0.15 and 0.6 V during discharge and charge, respectively. The reaction is accompanied with a reversible capacity close to 350 mAh g-1, which matches the value expected for the formation of NaGe. The electrode capacity retention is stable over 15 cycles but declines somewhat rapidly afterwards. This decline is typical for alloying systems undergoing large volume expansion, and calls for engineering solutions to confine the mechanical stress and control the electrolyte decomposition reactions that are likely to be the main sources of degradations. The rate performance results highlight the huge potential of nanosized germanium as a potential Na-ion anode. The reaction kinetics is found to be very good with about 220 mAh g-1 delivered at 170 C. Finally, the preliminary XRD results do not reveal the formation of crystalline phases at full (dis)charge.

  5. Photon Identification with Segmented Germanium Detectors in Low Radiation Environments

    SciTech Connect

    Abt, I.; Caldwell, A.; Kroeninger, K.; Liu, J.; Liu, X.; Majorovits, B.; Stelzer, F.

    2007-03-28

    Effective identification of photon-induced events is essential for a new generation of double beta-decay experiments. One such experiment is the GERmanium Detector Array, GERDA, located at the INFN Gran Sasso National Laboratory (LNGS) in Italy. It uses germanium, enriched in 76Ge, as source and detector, and aims at a background level of less than 10-3 counts/(kg {center_dot} keV {center_dot} y) in the region of the Q{beta}{beta}-value. Highly segmented detectors are being developed for this experiment. A detailed GEANT4 Monte Carlo study about the possibilities to identify photon--induced background was published previously. An 18-fold segmented prototype detector was tested and its performance compared with Monte Carlo predictions. The detector performed well and the agreement with the Monte Carlo is excellent.

  6. Characterization of the impurities in tungsten/silicon-germanium contacts

    SciTech Connect

    Gregg, H.A. Sr.

    1986-03-26

    Secondary ion mass spectrometry and Auger electron spectrometry depth profiling were used to determine impurity distributions in sputter deposited tungsten films over N-type and P-type 80/20 silicon-germanium elements of thermoelectric devices. These analyses showed that silicon, oxygen, sodium, boron, and phosphorous were present as impurities in the tungsten film. All these impurities except oxygen and sodium came from the substrate. Oxygen was gettered by the tungsten films, while sodium was possibly the result of sample handling. Further, the results from this study indicate that an oxide build-up, primarily at the tungsten/silicon-germanium interface of the N-type materials, is the major contributor to contact resistance in thermoelectric devices.

  7. Synthesis and photoluminescence of ultra-pure germanium nanoparticles

    NASA Astrophysics Data System (ADS)

    Chivas, R.; Yerci, S.; Li, R.; Dal Negro, L.; Morse, T. F.

    2011-09-01

    We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core-shell configuration with highly crystalline core material. Powder X-ray diffraction measurements verify the presence of highly pure, nano-scale germanium with average crystallite size of 30 nm and micro-strain of 0.058%. X-ray photoelectron spectroscopy demonstrates that GeO x ( x ⩽ 2) shells cover the surfaces of the nanoparticles. Under optical excitation, these nanoparticles exhibit two separate emission bands at room temperature: a visible emission at 500 nm with 0.5-1 ns decay times and an intense near-infrared emission at 1575 nm with up to ˜20 μs lifetime.

  8. Diffusion of n-type dopants in germanium

    SciTech Connect

    Chroneos, A.; Bracht, H.

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  9. Beta-nitro derivatives of germanium(IV) corrolates.

    PubMed

    Mastroianni, Marco; Zhu, Weihua; Stefanelli, Manuela; Nardis, Sara; Fronczek, Frank R; Smith, Kevin M; Ou, Zhongping; Kadish, Karl M; Paolesse, Roberto

    2008-12-15

    The reaction between germanium(IV) meso-triphenylcorrolates and nitrate salts affords the corresponding beta-nitro substituted corroles in good yield. Chromatographic separation of the crude reaction mixtures enables isolation of a mu-oxo dimer along with the corresponding monomers bearing a hydroxy or methoxy group at an axial position of the germanium central metal ion. Depending on the reaction conditions, mono- or dinitro substituted complexes can be obtained. The substitution is highly regioselective in each case, giving only the 3-nitro or 3,17-dinitro derivative among the different possible isomers. Five of the synthesized complexes were examined by cyclic voltammetry and UV-visible spectroelectrochemistry in dichloromethane, and the dinitro mu-oxo dimer is structurally characterized.

  10. 30 CFR 250.604 - Hydrogen sulfide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 2 2014-07-01 2014-07-01 false Hydrogen sulfide. 250.604 Section 250.604... § 250.604 Hydrogen sulfide. When a well-workover operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  11. 30 CFR 250.504 - Hydrogen sulfide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 2 2014-07-01 2014-07-01 false Hydrogen sulfide. 250.504 Section 250.504... § 250.504 Hydrogen sulfide. When a well-completion operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  12. 30 CFR 250.604 - Hydrogen sulfide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 2 2013-07-01 2013-07-01 false Hydrogen sulfide. 250.604 Section 250.604... § 250.604 Hydrogen sulfide. When a well-workover operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  13. 30 CFR 250.504 - Hydrogen sulfide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 2 2012-07-01 2012-07-01 false Hydrogen sulfide. 250.504 Section 250.504... § 250.504 Hydrogen sulfide. When a well-completion operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  14. 30 CFR 250.604 - Hydrogen sulfide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 2 2012-07-01 2012-07-01 false Hydrogen sulfide. 250.604 Section 250.604... § 250.604 Hydrogen sulfide. When a well-workover operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  15. 30 CFR 250.504 - Hydrogen sulfide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 2 2013-07-01 2013-07-01 false Hydrogen sulfide. 250.504 Section 250.504... § 250.504 Hydrogen sulfide. When a well-completion operation is conducted in zones known to contain hydrogen sulfide (H2S) or in zones where the presence of H2S is unknown (as defined in § 250.490 of...

  16. Surface events identification in the EDELWEISS germanium bolometers

    SciTech Connect

    Navick, X.-F.

    2007-03-28

    In the first phase of the EDELWEISS-II Dark Matter search, 23 germanium detectors with NTD thermal sensors and 7 detectors with NbSi thin films are going to be used at 20mK for the direct detection of WIMPs. In this paper, we are describing the different techniques of identification of surface events that might improve strongly the physics results of this experiment.

  17. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    SciTech Connect

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  18. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    PubMed

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  19. Bandwidth improvement for germanium photodetector using wire bonding technology.

    PubMed

    Chen, Guanyu; Yu, Yu; Deng, Shupeng; Liu, Lei; Zhang, Xinliang

    2015-10-01

    We demonstrate an ultrahigh speed germanium photodetector by introducing gold wires into the discrete ground electrodes with standard wire bonding technology. To engineer the parasitic parameter, the physical dimension of the gold wire used for wire bonding is specially designed with an inductance of about 450 pH. Simulation and experimental results show that the bandwidth of the photodetector can be effectively extended from less than 30 GHz to over 60 GHz.

  20. Long-Term Stability of Germanium Resistance Thermometers

    NASA Astrophysics Data System (ADS)

    Courts, S. Scott; Yeager, C. Joseph

    2003-09-01

    Doped germanium resistance thermometers (GRTs) have been used as cryogenic thermometers for forty years. GRTs exhibit a negative temperature coefficient of resistance and possess a high sensitivity that allows for sub-millikelvin control at lower temperatures. These devices also exhibit excellent short- and long-term stability and were used to maintain national temperature scales below 30 K until the advent of the rhodium-iron thermometer. Lake Shore Cryotronics uses GRTs, model GR-200A-1000, as the transfer thermometer for temperature calibration below 30 K. A typical GRT working standard is thermally cycled from 1.4 K to 330 K once a week on average. Every six months, to ensure stability and traceability, these working standard GRTs are compared against a set of standards-grade germanium, platinum, and rhodium-iron resistance thermometers calibrated by the National Institute of Standards and Technology in the US and/or the National Physical Laboratory in the UK. These comparisons yield a measure of the long-term stability of these GRTs over a period of years. This paper reports the long-term stability from 1.4 K to 30 K of eleven germanium resistance thermometers as a function of time and thermal cycling during their use as working standard thermometers.

  1. Tin-germanium alloys as anode materials for sodium-ion batteries.

    PubMed

    Abel, Paul R; Fields, Meredith G; Heller, Adam; Mullins, C Buddie

    2014-09-24

    The sodium electrochemistry of evaporatively deposited tin, germanium, and alloys of the two elements is reported. Limiting the sodium stripping voltage window to 0.75 V versus Na/Na+ improves the stability of the tin and tin-rich compositions on repeated sodiation/desodiation cycles, whereas the germanium and germanium-rich alloys were stable up to 1.5 V. The stability of the electrodes could be correlated to the surface mobility of the alloy species during deposition suggesting that tin must be effectively immobilized in order to be successfully utilized as a stable electrode. While the stability of the alloys is greatly increased by the presence of germanium, the specific Coulombic capacity of the alloy decreases with increasing germanium content due to the lower Coulombic capacity of germanium. Additionally, the presence of germanium in the alloy suppresses the formation of intermediate phases present in the electrochemical sodiation of tin. Four-point probe resistivity measurements of the different compositions show that electrical resistivity increases with germanium content. Pure germanium is the most resistive yet exhibited the best electrochemical performance at high current densities which indicates that electrical resistivity is not rate limiting for any of the tested compositions.

  2. Synthesis and characterization of silicon and germanium nanowires, silica nanotubes, and germanium telluride/tellurium nanostructures

    NASA Astrophysics Data System (ADS)

    Tuan, Hsing-Yu

    A supercritical fluid-liquid solid (SFLS) nanowire growth process using alkanethiol-coated Au nanoparticles to seed silicon nanowires was developed for synthesizing silicon nanowires in solution. The organic solvent was found to significantly influence the silicon precursor decomposition in solution. 46.8 mg of silicon nanowires with 63% yield of silicon nanowire synthesis were achieved while using benzene as a solvent. The most widely used metal for seeding Si and Ge nanowires is Au. However, Au forms deep trap in both Si and Ge and alternative metal seeds are more desirable for electronic applications. Different metal nanocrystals were studied for Si and Ge nanowire synthesis, including Co, Ni, CuS, Mn, Ir, MnPt 3, Fe2O3, and FePt. All eight metals have eutectic temperatures with Si and Ge that are well above the nanowire growth temperature. Unlike Au nanocrystals, which seed nanowire growth through the formation of a liquid Au:Si (Au:Ge) alloy, these other metals seed nanowires by forming solid silicide alloys, a process we have called "supercritical fluid-solid-solid" (SFSS) growth. Moreover, Co and Ni nanoparticles were found to catalyze the decomposition of various silane reactants that do not work well to make Si nanowires using Au seeds. In addition to seeding solid nanowires, CuS nanoparticles were found to seed silica nanotubes via a SFSS like mechanism. 5% of synthesized silica nanotubes were coiled. Heterostructured nanomaterials are interesting since they merge the properties of the individual materials and can be used in diverse applications. GeTe/Te heterostructures were synthesized by reacting diphenylgermane (DPG) and TOP-Te in the presence of organic surfactants. Aligned Te nanorods were grown on the surface facets of micrometer-size germanium telluride particles.

  3. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    NASA Astrophysics Data System (ADS)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  4. The mixed glass former effect in 0.5(Sodium Sulfide) + 0.5[x(Germanium Sulfide) + (1-x)PS5/2] glasses

    NASA Astrophysics Data System (ADS)

    Bischoff, Christian Michael

    The rapidly growing global energy demand, especially for energy from renewable sources, requires development of longer-lasting, safer, and smaller batteries. Ion-conducting glasses are of particular interest as candidates for solid electrolyte materials in next-generation batteries. Commercial solid-state electrolytes require an ionic conductivity of at least 10-3 S/cm. In order to meet this design constraint, development of new ion-conducting glasses is required. An increase or decrease in the ionic conductivity of glasses can be achieved by mixing two glass former cations at constant fraction of the mobile cation, known as the mixed glass former effect (MGFE). This enhancement or depression of the ionic conductivity is non-linear and non-additive, and its cause is currently unknown. The 0.5Na2S + 0.5[xGeS 2 + (1-x)PS5/2] glasses exhibit a negative MGFE in Na + ion conductivity. If the cause of this depression in the Na + ion conductivity is better understood, it may enable the design of mixed glass former systems that will exhibit enhancement of the ionic conductivity. We hypothesis that changes in short range order structures occur when the thio-phosphate and thio-germanate glass networks are mixed, causing the negative MGFE. Our comprehensive study of the glass structure and physical properties of the 0.5Na2S + 0.5[xGeS2 + (1-x)PS5/2] glasses shows that structural changes in the ternary glasses strongly correlate with the decrease in the ionic conductivity.

  5. Lithium-cupric sulfide cell

    SciTech Connect

    Cuesta, A.J.; Bump, D.D.

    1980-01-01

    Lithium cells have become the primary power source for cardiac pacemakers due to their reliability and longevity at low current drain rates. A lithium-cupric sulfide cell was developed which makes maximum use of the shape of a pacemaker's battery compartment. The cell has a stable voltage throughout 90% of its lifetime. It then drops to a second stable voltage before depletion. The voltage drop creates a small decrease in pacemaker rate, which alerts the physician to replace the pacemaker. No loss of capacity due to self-discharge as been seen to date, and cells have proven to be safe under extreme conditions. 2 refs.

  6. Molybdenum sulfide/carbide catalysts

    DOEpatents

    Alonso, Gabriel; Chianelli, Russell R.; Fuentes, Sergio; Torres, Brenda

    2007-05-29

    The present invention provides methods of synthesizing molybdenum disulfide (MoS.sub.2) and carbon-containing molybdenum disulfide (MoS.sub.2-xC.sub.x) catalysts that exhibit improved catalytic activity for hydrotreating reactions involving hydrodesulfurization, hydrodenitrogenation, and hydrogenation. The present invention also concerns the resulting catalysts. Furthermore, the invention concerns the promotion of these catalysts with Co, Ni, Fe, and/or Ru sulfides to create catalysts with greater activity, for hydrotreating reactions, than conventional catalysts such as cobalt molybdate on alumina support.

  7. Preparation of amorphous sulfide sieves

    DOEpatents

    Siadati, Mohammad H.; Alonso, Gabriel; Chianelli, Russell R.

    2006-11-07

    The present invention involves methods and compositions for synthesizing catalysts/porous materials. In some embodiments, the resulting materials are amorphous sulfide sieves that can be mass-produced for a variety of uses. In some embodiments, methods of the invention concern any suitable precursor (such as thiomolybdate salt) that is exposed to a high pressure pre-compaction, if need be. For instance, in some cases the final bulk shape (but highly porous) may be same as the original bulk shape. The compacted/uncompacted precursor is then subjected to an open-flow hot isostatic pressing, which causes the precursor to decompose and convert to a highly porous material/catalyst.

  8. Synthesis and optical properties of sulfide nanoparticles prepared in dimethylsulfoxide.

    PubMed

    Li, Yuebin; Ma, Lun; Zhang, Xing; Joly, Alan G; Liu, Zuli; Chen, Wei

    2008-11-01

    Many methods have been reported for the formation of sulfide nanoparticles by the reaction of metallic salts with sulfide chemical sources in aqueous solutions or organic solvents. Here, we report the formation of sulfide nanoparticles in dimethylsulfoxide (DMSO) by boiling metallic salts without sulfide sources. The sulfide sources are generated from the boiling of DMSO and react with metallic salts to form sulfide nanoparticles. In this method DMSO functions as a solvent and a sulfide source as well as a stabilizer for the formation of the nanoparticles. The recipe is simple and economical making sulfide nanoparticles formed in this way readily available for many potential applications.

  9. 40 CFR 425.03 - Sulfide analytical methods and applicability.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... Provisions § 425.03 Sulfide analytical methods and applicability. (a) The potassium ferricyanide titration... the potassium ferricyanide titration method for the determination of sulfide in wastewaters...

  10. 40 CFR 425.03 - Sulfide analytical methods and applicability.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... Provisions § 425.03 Sulfide analytical methods and applicability. (a) The potassium ferricyanide titration... the potassium ferricyanide titration method for the determination of sulfide in wastewaters...

  11. 40 CFR 425.03 - Sulfide analytical methods and applicability.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... Provisions § 425.03 Sulfide analytical methods and applicability. (a) The potassium ferricyanide titration... the potassium ferricyanide titration method for the determination of sulfide in wastewaters...

  12. Synthesis and Optical Properties of Sulfide Nanoparticles Prepared in Dimethylsulfoxide

    SciTech Connect

    Li, Yuebin; Ma, Lun; Zhang, Xing; Joly, Alan G.; Liu, Zuli; Chen, Wei

    2008-11-01

    Many methods have been reported for the formation of sulfide nanoparticles by the reaction of metallic salts with sulfide chemical sources in aqueous solutions or organic solvents. Here, we report the formation of sulfide nanoparticles in dimethylsulfoxide (DMSO) by boiling metallic salts without sulfide sources. The sulfide sources are generated from the boiling of DMSO and react with metallic salts to form sulfide nanoparticles. In this method DMSO functions as a solvent and a sulfide source as well as a stabilizer for the formation of the nanoparticles. The recipe is simple and economical making sulfide nanoparticles formed in this way readily available for many potential applications.

  13. Variation in sulfide tolerance of photosystem II in phylogenetically diverse cyanobacteria from sulfidic habitats

    NASA Technical Reports Server (NTRS)

    Miller, Scott R.; Bebout, Brad M.

    2004-01-01

    Physiological and molecular phylogenetic approaches were used to investigate variation among 12 cyanobacterial strains in their tolerance of sulfide, an inhibitor of oxygenic photosynthesis. Cyanobacteria from sulfidic habitats were found to be phylogenetically diverse and exhibited an approximately 50-fold variation in photosystem II performance in the presence of sulfide. Whereas the degree of tolerance was positively correlated with sulfide levels in the environment, a strain's phenotype could not be predicted from the tolerance of its closest relatives. These observations suggest that sulfide tolerance is a dynamic trait primarily shaped by environmental variation. Despite differences in absolute tolerance, similarities among strains in the effects of sulfide on chlorophyll fluorescence induction indicated a common mode of toxicity. Based on similarities with treatments known to disrupt the oxygen-evolving complex, it was concluded that sulfide toxicity resulted from inhibition of the donor side of photosystem II.

  14. Ammonia and hydrogen sulfide removal using biochar

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Reducing ammonia and hydrogen sulfide emissions from livestock facilities is an important issue for many communities and livestock producers. Ammonia has been regarded as odorous, precursor for particulate matter (PM), and contributed to livestock mortality. Hydrogen sulfide is highly toxic at elev...

  15. Sulfide oxidation under chemolithoautotrophic denitrifying conditions.

    PubMed

    Cardoso, Ricardo Beristain; Sierra-Alvarez, Reyes; Rowlette, Pieter; Flores, Elias Razo; Gómez, Jorge; Field, Jim A

    2006-12-20

    Chemolithoautotrophic denitrifying microorganisms oxidize reduced inorganic sulfur compounds coupled to the reduction of nitrate as an electron acceptor. These denitrifiers can be applied to the removal of nitrogen and/or sulfur contamination from wastewater, groundwater, and gaseous streams. This study investigated the physiology and kinetics of chemolithotrophic denitrification by an enrichment culture utilizing hydrogen sulfide, elemental sulfur, or thiosulfate as electron donor. Complete oxidation of sulfide to sulfate was observed when nitrate was supplemented at concentrations equal or exceeding the stoichiometric requirement. In contrast, sulfide was only partially oxidized to elemental sulfur when nitrate concentrations were limiting. Sulfide was found to inhibit chemolithotrophic sulfoxidation, decreasing rates by approximately 21-fold when the sulfide concentration increased from 2.5 to 10.0 mM, respectively. Addition of low levels of acetate (0.5 mM) enhanced denitrification and sulfate formation, suggesting that acetate was utilized as a carbon source by chemolithotrophic denitrifiers. The results of this study indicate the potential of chemolithotrophic denitrification for the removal of hydrogen sulfide. The sulfide/nitrate ratio can be used to control the fate of sulfide oxidation to either elemental sulfur or sulfate.

  16. 30 CFR 250.808 - Hydrogen sulfide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 2 2011-07-01 2011-07-01 false Hydrogen sulfide. 250.808 Section 250.808 Mineral Resources BUREAU OF OCEAN ENERGY MANAGEMENT, REGULATION, AND ENFORCEMENT, DEPARTMENT OF THE... Safety Systems § 250.808 Hydrogen sulfide. Production operations in zones known to contain...

  17. Weathering of sulfides on Mars

    NASA Technical Reports Server (NTRS)

    Burns, Roger G.; Fisher, Duncan S.

    1987-01-01

    Pyrrhotite-pentlandite assemblages in mafic and ultramafic igneous rocks may have contributed significantly to the chemical weathering reactions that produce degradation products in the Martian regolith. By analogy and terrestrial processes, a model is proposed whereby supergene alteration of these primary Fe-Ni sulfides on Mars has generated secondary sulfides (e.g., pyrite) below the water table and produced acidic groundwater containing high concentrations of dissolved Fe, Ni, and sulfate ions. The low pH solutions also initiated weathering reactions of igneous feldspars and ferromagnesian silicates to form clay silicate and ferric oxyhydroxide phases. Near-surface oxidation and hydrolysis of ferric sulfato-and hydroxo-complex ions and sols formed gossan above the water table consisting of poorly crystalline hydrated ferric sulfates (e.g., jarosite), oxides (ferrihydrite, goethite), and silica (opal). Underlying groundwater, now permafrost contains hydroxo sulfato complexes of Fe, Al, Mg, Ni, which may be stabilized in frozen acidic solutions beneath the surface of Mars. Sublimation of permafrost may replenish colloidal ferric oxides, sulfates, and phyllosilicates during dust storms on Mars.

  18. Percutaneous absorption of selenium sulfide

    SciTech Connect

    Farley, J.; Skelly, E.M.; Weber, C.B.

    1986-01-01

    The purpose of this study was to determine selenium levels in the urine of Tinea patients before and after overnight application of a 2.5% selenium sulfide lotion. Selenium was measured by atomic absorption spectroscopy (AAS). Hydride generation and carbon rod atomization were studied. It was concluded from this study that selenium is absorbed through intact skin. Selenium is then excreted, at least partially, in urine, for at least a week following treatment. The data show that absorption and excretion of selenium vary on an individual basis. Selenium levels in urine following a single application of selenium sulfide lotion do not indicate that toxic amounts of selenium are being absorbed. Repeated treatments with SeS/sub 2/ result in selenium concentrations in urine which are significantly higher than normal. Significant matrix effects are observed in the carbon rod atomization of urine samples for selenium determinations, even in the presence of a matrix modifier such as nickel. The method of standard additions is required to obtain accurate results in the direct determination of selenium in urine by carbon rod AAS.

  19. Hydrogen sulfide pollution in wastewater treatment facilities

    SciTech Connect

    AlDhowalia, K.H. )

    1987-01-01

    The hydrogen sulfide (H{sub 2}S) found in wastewater collection systems and wastewater treatment facilities results from the bacterial reduction of the sulfate ion (SO{sub 4}). Hydrogen sulfide is a gas that occurs both in the sewer atmosphere and as a dissolved gas in the wastewater. When raw wastewater first enters the wastewater treatment facility by gravity most of the hydrogen sulfide is in the gaseous phase and will escape into the atmosphere at the inlet structures. Also some of the dissolved hydrogen sulfide will be released at points of turbulance such as at drops in flow, flumes, or aeration chambers. Several factors can cause excessive hydrogen sulfide concentrations in a sewerage system. These include septic sewage, long flow times in the sewerage system, high temperatures, flat sewer grades, and poor ventilation. These factors are discussed in this paper.

  20. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    DOEpatents

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  1. Oligogermanes as molecular precursors for germanium(0) nanoparticles: Size control and size-dependent fluorescence

    SciTech Connect

    Schrick, Aaron C.; Weinert, Charles S.

    2013-10-15

    Graphical abstract: Catenated germanium compounds are employed as molecular precursors for germanium(0) nanoparticles. The size of the nanoparticles, and their fluorescence spectra, depend on the number of catenated germanium atoms present in the precursor. - Highlights: • We have used oligogermanes for the size-specific synthesis of germanium(0) nanoparticles. • The size of the nanomaterials obtained depends directly on the degree of catenation present in the oligogermane precursor. • The nanoparticles are shown to exhibit size-dependent fluorescence. • Oligogermanes will function as useful precursors for the synthesis of a variety of nanomaterials. - Abstract: Germanium nanoparticles were synthesized in solution from novel oligogermane molecular precursors. The size of the nanoparticles obtained is directly related to the number of catenated germanium atoms present in the oligogermane precursor and the nanoparticles exhibit size-dependent fluorescence. The germanium nanoparticles were also characterized by TEM, powder XRD, FTIR, EDS and XPS methods. This method appears to be a promising new route for the synthesis of germanium nanoparticles since the size of the materials obtained can be controlled by the choice of the oligogermane used as the precursor.

  2. Internal stresses and dislocation structure of large single crystals of germanium for IR optics

    NASA Astrophysics Data System (ADS)

    Kaplunov, I. A.

    2006-02-01

    The thermoelastic stresses that appear during crystallization have been theoretically estimated for single crystals of germanium grown in the shape of a disk. It is shown that there is a correlation between the stress distribution and the dislocation structure of large single crystals of germanium obtained by the Stepanov method and by directed crystallization.

  3. Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

    PubMed

    Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-29

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

  4. Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.

    PubMed

    Petykiewicz, Jan; Nam, Donguk; Sukhdeo, David S; Gupta, Shashank; Buckley, Sonia; Piggott, Alexander Y; Vučković, Jelena; Saraswat, Krishna C

    2016-04-13

    A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium-based lasers for on-chip optical interconnects.

  5. Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1975-01-01

    Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

  6. Nanoindentation-induced phase transformation and structural deformation of monocrystalline germanium: a molecular dynamics simulation investigation

    PubMed Central

    2013-01-01

    Molecular dynamics simulations were conducted to study the nanoindentation of monocrystalline germanium. The path of phase transformation and distribution of transformed region on different crystallographic orientations were investigated. The results indicate the anisotropic behavior of monocrystalline germanium. The nanoindentation-induced phase transformation from diamond cubic structure to β-tin-Ge was found in the subsurface region beneath the tool when indented on the (010) plane, while direct amorphization was observed in the region right under the indenter when the germanium was loaded along the [101] and [111] directions. The transformed phases extend along the < 110 > slip direction of germanium. The depth and shape of the deformed layers after unloading are quite different according to the crystal orientation of the indentation plane. The study results suggest that phase transformation is the dominant mechanism of deformation of monocrystalline germanium film in nanoindentation. PMID:23947487

  7. Suspended germanium cross-shaped microstructures for enhancing biaxial tensile strain

    NASA Astrophysics Data System (ADS)

    Ishida, Satomi; Kako, Satoshi; Oda, Katsuya; Ido, Tatemi; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-01

    We fabricate a suspended germanium cross-shaped microstructure to biaxially enhance residual tensile strain using a germanium epilayer directly grown on a silicon-on-insulator substrate. Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. We demonstrate systematic control over biaxial tensile strain and photoluminescence peaks by changing structural geometry. The photoluminescence peaks corresponding to the direct recombination between the conduction Γ valley and two strain-induced separated valence bands have been clearly assigned. A maximum biaxial strain of 0.8% has been achieved, which is almost half of that required to transform germanium into a direct band-gap semiconductor.

  8. Germanium Lift-Off Masks for Thin Metal Film Patterning

    NASA Technical Reports Server (NTRS)

    Brown, Ari

    2012-01-01

    A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

  9. Temperature-dependent Refractive Index of Silicon and Germanium

    NASA Technical Reports Server (NTRS)

    Frey, Bradley J.; Leviton, Douglas B.; Madison, Timothy J.

    2006-01-01

    Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than k5 x 10" is desired.

  10. Gallium-doped germanium, evaluation of photoconductors, part 1

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1979-01-01

    Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

  11. Effect on magnetic properties of germanium encapsulated C60 fullerene

    NASA Astrophysics Data System (ADS)

    Umran, Nibras Mossa; Kumar, Ranjan

    2013-02-01

    Structural and electronic properties of Gen(n = 1-4) doped C60 fullerene are investigated with ab initio density functional theory calculations by using an efficient computer code, known as SIESTA. The pseudopotentials are constructed using a Trouiller-Martins scheme, to describe the interaction of valence electrons with the atomic cores. In endohedral doped embedding of more germanium atoms complexes we have seen that complexes are stable and thereafter cage break down. We have also investigated that binding energy, electronic affinity increases and magnetic moment oscillating behavior as the number of semiconductor atoms in C60 fullerene goes on increasing.

  12. Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

    NASA Astrophysics Data System (ADS)

    Bracht, H.; Schneider, S.; Klug, J. N.; Liao, C. Y.; Hansen, J. Lundsgaard; Haller, E. E.; Larsen, A. Nylandsted; Bougeard, D.; Posselt, M.; Wündisch, C.

    2009-12-01

    We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.

  13. A miniature temperature high germanium doped PCF interferometer sensor.

    PubMed

    Favero, F C; Spittel, R; Just, F; Kobelke, J; Rothhardt, M; Bartelt, H

    2013-12-16

    We report in this paper a high thermal sensitivity (78 pm/°C) modal interferometer using a very short Photonic Crystal Fiber stub with a shaped Germanium doped core. The Photonic Crystal Fiber is spliced between two standard fibers. The splice regions allow the excitation of the core and cladding modes in the PCF and perform an interferometric interaction of such modes. The device is proposed for sensitive temperature measurements in transmission, as well as in reflection operation mode with the same high temperature sensitivity.

  14. Ultra-low noise mechanically cooled germanium detector

    NASA Astrophysics Data System (ADS)

    Barton, P.; Amman, M.; Martin, R.; Vetter, K.

    2016-03-01

    Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose energy thresholds are limited by electronic noise. In this paper, methods are presented which can lower the electronic noise of these detectors. Through ultra-low vibration mechanical cooling and wire bonding of a CMOS charge sensitive preamplifier to a sub-pF p-type point contact HPGe detector, we demonstrate electronic noise levels below 40 eV-FWHM.

  15. Resonance-enhanced waveguide-coupled silicon-germanium detector

    NASA Astrophysics Data System (ADS)

    Alloatti, L.; Ram, R. J.

    2016-02-01

    A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  16. Three holes bound to a double acceptor - Be(+) in germanium

    NASA Technical Reports Server (NTRS)

    Haller, E. E.; Mcmurray, R. E., Jr.; Falicov, L. M.; Haegel, N. M.; Hansen, W. L.

    1983-01-01

    A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

  17. Germanium nanowire growth controlled by surface diffusion effects

    SciTech Connect

    Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert; Teubner, Thomas; Boeck, Torsten; Fornari, Roberto

    2012-07-23

    Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

  18. Preparation of freestanding germanium nanocrystals by ultrasonic aerosol pyrolysis

    NASA Astrophysics Data System (ADS)

    Stoldt, Conrad R.; Haag, Michael A.; Larsen, Brian A.

    2008-07-01

    This letter reports a synthetic route adaptable for the continuous, large-scale production of germanium (Ge) nanocrystals for emerging electronic and optoelectronic applications. Using an ultrasonic aerosol pyrolysis approach, diamond cubic Ge nanocrystals with dense, spherical morphologies and sizes ranging from 3to14nm are synthesized at 700°C from an ultrasonically generated aerosol of tetrapropylgermane (TPG) precursor and toluene solvent. The ultimate crystal size demonstrates a near linear relationship within the range of TPG concentrations investigated, while the shape of the measured size distributions predicts multiple particle formation mechanisms during aerosol decomposition and condensation.

  19. Infrared absorption study of neutron-transmutation-doped germanium

    NASA Technical Reports Server (NTRS)

    Park, I. S.; Haller, E. E.

    1988-01-01

    Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

  20. Germanium wrap-around photodetectors on Silicon photonics.

    PubMed

    Going, Ryan; Seok, Tae Joon; Loo, Jodi; Hsu, Kyle; Wu, Ming C

    2015-05-01

    We present a novel waveguide coupling scheme where a germanium diode grown via rapid melt growth is wrapped around a silicon waveguide. A 4 fF PIN photodiode is demonstrated with 0.95 A/W responsivity at 1550 nm, 6 nA dark current, and nearly 9 GHz bandwidth. Devices with shorter intrinsic region exhibit higher bandwidth (30 GHz) and slightly lower responsivity (0.7 A/W). An NPN phototransistor is also demonstrated using the same design with 14 GHz f(T). PMID:25969287

  1. Sulfiding of hydrogel derived catalysts

    SciTech Connect

    Kemp, R.A.

    1991-11-05

    This patent describes a process for hydrotreating hydrocarbon feeds. It comprises contacting the feeds at a temperature in the range of from about 400{degrees} F. to about 850{degrees} F. and a pressure in the range of from about 400 psig to about 2500 psig with a catalyst having improved desulfurization activity prepared by incorporating an element selected from the group consisting of nickel, cobalt and mixtures thereof, and a heavy metal selected from the group consisting of molybdenum, tungsten and mixtures thereof, into an alumina hydrogel containing a phosphorous-containing compound, and sulfiding the catalyst with a gaseous sulfur compound at a temperature of at least about 900{degrees} F. for at least one hour.

  2. Pelletizing of sulfide molybdenite concentrates

    NASA Astrophysics Data System (ADS)

    Palant, A. A.

    2007-04-01

    The results of a pelletizing investigation using various binding components (water, syrup, sulfite-alcohol distillery grains, and bentonite) of the flotation sulfide molybdenite concentrate (˜84% MoS2) from the Mongolian deposit are discussed. The use of syrup provides rather high-strength pellets (>3 N/pellet or >300 g/pellet) of the required size (2 3 mm) for the consumption of 1 kg binder per 100 kg concentrate. The main advantage of the use of syrup instead of bentonite is that the molybdenum cinder produced by oxidizing roasting of raw ore materials is not impoverished due to complete burning out of the syrup. This fact exerts a positive effect on the subsequent hydrometallurgical process, decreasing molybdenum losses related to dump cakes.

  3. [Hydrogen sulfide and penile erection].

    PubMed

    Huang, Yi-Ming; Cheng, Yong; Jiang, Rui

    2012-09-01

    Hydrogen sulfide (H2S) is the third type of active endogenous gaseous signal molecule following nitric oxide (NO) and carbon monoxide (CO). In mammalians, H2S is mainly synthesized by two proteases, cystathionine-beta-synthase (CBS) and cystathionine-gamma-lyase (CSE). H2S plays an essential function of physiological regulation in vivo, and promotes penile erection by acting on the ATP-sensitive potassium channels to relax the vascular smooth muscle as well as by the synergistic effect with testosterone and NO to relax the corpus cavernosum smooth muscle (CCSM). At present, the selective phosphodiesterase type 5 (PDE5) inhibitor is mainly used for the treatment of erectile dysfunction (ED), but some ED patients fail to respond. Therefore, further studies on the mechanism of H2S regulating penile erection may provide a new way for the management of erectile dysfunction.

  4. Structural studies in limestone sulfidation

    SciTech Connect

    Fenouil, L.A.; Lynn, S.

    1993-05-01

    This study investigates the sulfidation of limestone at high temperatures (700--900{degree}C) as the first step in the design of a High-Temperature Coal-Gas Clean-Up system using millimeter-size limestone particles. Several workers have found that the rate of this reaction significantly decreases after an initial 10 to 15% conversion of CaCO{sub 3} to CaS. The present work attempts to explain this feature. It is first established that millimeter-size limestone particles do not sinter at temperatures up to the CaCO{sub 3} calcination point (899{degree}C at 1.03 bar CO{sub 2} partial pressure). It is then shown that CaS sinters rapidly at 750 to 900{degree}C if CO{sub 2} is present in the gas phase. Scanning Electron Microscope (SEM) photographs and Electron Dispersive Spectroscopy (EDS) data reveal that the CaS product layer sinters and forms a quasi-impermeable coating around the CaCO{sub 3} grains that greatly hinders more H{sub 2}S from reaching the still unreacted parts of the stone. Moreover, most of the pores initially present within the limestone structure begin to disappear or, at least, are significantly reduced in size. From then on, subsequent conversion is limited by diffusion of H{sub 2}S through the CaS layer, possibly by S{sup 2{minus}} ionic diffusion. The kinetics is then adequately described by a shrinking-core model, in which a sharp front of completely converted limestone is assumed to progress toward the center of the pellet. Finally, experimental evidence and computer simulations using simple sintering models suggest that the CaS sintering, responsible for the sharp decrease in the sulfidation rate, is surface-diffusion controlled.

  5. 21 CFR 73.2995 - Luminescent zinc sulfide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Luminescent zinc sulfide. 73.2995 Section 73.2995... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2995 Luminescent zinc sulfide. (a) Identity. The color additive luminescent zinc sulfide is zinc sulfide containing a copper activator....

  6. 21 CFR 73.2995 - Luminescent zinc sulfide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Luminescent zinc sulfide. 73.2995 Section 73.2995... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2995 Luminescent zinc sulfide. (a) Identity. The color additive luminescent zinc sulfide is zinc sulfide containing a copper activator....

  7. 21 CFR 73.2995 - Luminescent zinc sulfide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Luminescent zinc sulfide. 73.2995 Section 73.2995... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2995 Luminescent zinc sulfide. (a) Identity. The color additive luminescent zinc sulfide is zinc sulfide containing a copper activator....

  8. 21 CFR 73.2995 - Luminescent zinc sulfide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Luminescent zinc sulfide. 73.2995 Section 73.2995... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2995 Luminescent zinc sulfide. (a) Identity. The color additive luminescent zinc sulfide is zinc sulfide containing a copper activator....

  9. 21 CFR 177.2490 - Polyphenylene sulfide resins.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Polyphenylene sulfide resins. 177.2490 Section 177... Components of Articles Intended for Repeated Use § 177.2490 Polyphenylene sulfide resins. Polyphenylene sulfide resins (poly(1,4-phenylene sulfide) resins) may be safely used as coatings or components...

  10. Nanostructured lead sulfide: synthesis, structure and properties

    NASA Astrophysics Data System (ADS)

    Sadovnikov, S. I.; Gusev, A. I.; Rempel, A. A.

    2016-07-01

    The theoretical and experimental results of recent studies dealing with nanostructured lead sulfide are summarized and analyzed. The key methods for the synthesis of nanostructured lead sulfide are described. The crystal structure of PbS in nanopowders and nanofilms is discussed. The influence of the size of nanostructure elements on the optical and thermal properties of lead sulfide is considered. The dependence of the band gap of PbS on the nanoparticle (crystallite) size for powders and films is illustrated. The bibliography includes 222 references.

  11. Microbial control of hydrogen sulfide production

    SciTech Connect

    Montgomery, A.D.; Bhupathiraju, V.K.; Wofford, N.; McInerney, M.J.

    1995-12-31

    A sulfide-resistant strain of Thiobacillus denitrificans, strain F, prevented the accumulation of sulfide by Desulfovibrio desulfuricans when both organisms were grown in liquid medium. The wild-type strain of T. denitrificans did not prevent the accumulation of sulfide produced by D. desulfuricans. Strain F also prevented the accumulation of sulfide by a mixed population of sulfate-reducing bacteria enriched from an oil field brine. Fermentation balances showed that strain F stoichiometrically oxidized the sulfide produced by D. desulfuricans and the oil field brine enrichment to sulfate. The ability of a strain F to control sulfide production in an experimental system of cores and formation water from the Redfield, Iowa, natural gas storage facility was also investigated. A stable, sulfide-producing biofilm was established in two separate core systems, one of which was inoculated with strain F while the other core system (control) was treated in an identical manner, but was not inoculated with strain F. When formation water with 10 mM acetate and 5 mM nitrate was injected into both core systems, the effluent sulfide concentrations in the control core system ranged from 200 to 460 {mu}M. In the test core system inoculated with strain F, the effluent sulfide concentrations were lower, ranging from 70 to 110 {mu}M. In order to determine whether strain F could control sulfide production under optimal conditions for sulfate-reducing bacteria, the electron donor was changed to lactate and inorganic nutrients (nitrogen and phosphate sources) were added to the formation water. When nutrient-supplemented formation water with 3.1 mM lactate and 10 mM nitrate was used, the effluent sulfide concentrations of the control core system initially increased to about 3,800 {mu}M, and then decreased to about 1,100 {mu}M after 5 weeks. However, in the test core system inoculated with strain F, the effluent sulfide concentrations were much lower, 160 to 330 {mu}M.

  12. Investigation on laboratory and pilot-scale airlift sulfide oxidation reactor under varying sulfide loading rate.

    PubMed

    Pokasoowan, Chanya; Kanitchaidecha, Wilawan; K C, Bal Krishna; Annachhatre, Ajit P

    2009-01-01

    Airlift bioreactor was established for recovering sulfur from synthetic sulfide wastewater under controlled dissolved oxygen condition. The maximum recovered sulfur was 14.49 g/day when sulfide loading rate, dissolved oxygen (DO) and pH values were 2.97 kgHS(-)/m(3)-day, 0.2-1.0 mg/L and 7.2-7.8, respectively. On the other hand, the increase in recovered sulfur reduced the contact surface of sulfide oxidizing bacteria which affects the recovery process. This effect caused to reduce the conversion of sulfide to sulfur. More recovered sulfur was produced at high sulfide loading rate due to the change of metabolic pathway of sulfide-oxidizing bacteria which prevented the toxicity of sulfide in the culture. The maximum activity in this system was recorded to be about 3.28 kgS/kgVSS-day. The recovered sulfur contained organic compounds which were confirmed by the results from XRD and CHN analyzer. Afterwards, by annealing the recovered sulfur at 120 degrees C for 24 hrs under ambient Argon, the percentage of carbon reduced from 4.44% to 0.30%. Furthermore, the percentage of nitrogen and hydrogen decreased from 0.79% and 0.48% to 0.00% and 0.14%, respectively. This result showed the success in increasing the purity of recovered sulfur by using the annealing technique. The pilot-scale biological sulfide oxidation process was carried out using real wastewater from Thai Rayon Industry in Thailand. The airlift reactor successfully removed sulfide more than 90% of the influent sulfide at DO concentration of less than 0.1 mg/L, whereas the elementary sulfur production was 2.37 kgS/m(3)-day at sulfide loading rate of 2.14 kgHS(-)/m(3)-day. The sulfur production was still increasing as the reactor had not yet reached its maximum sulfide loading rate. PMID:19085599

  13. Intrinsic germanium detector used in borehole sonde for uranium exploration

    USGS Publications Warehouse

    Senftle, F.E.; Moxham, R.M.; Tanner, A.B.; Boynton, G.R.; Philbin, P.W.; Baicker, J.A.

    1976-01-01

    A borehole sonde (~1.7 m long; 7.3 cm diameter) using a 200 mm2 planar intrinsic germanium detector, mounted in a cryostat cooled by removable canisters of frozen propane, has been constructed and tested. The sonde is especially useful in measuring X- and low-energy gamma-ray spectra (40–400 keV). Laboratory tests in an artificial borehole facility indicate its potential for in-situ uranium analyses in boreholes irrespective of the state of equilibrium in the uranium series. Both natural gamma-ray and neutron-activation gamma-ray spectra have been measured with the sonde. Although the neutron-activation technique yields greater sensitivity, improvements being made in the resolution and efficiency of intrinsic germanium detectors suggest that it will soon be possible to use a similar sonde in the passive mode for measurement of uranium in a borehole down to about 0.1% with acceptable accuracy. Using a similar detector and neutron activation, the sonde can be used to measure uranium down to 0.01%.

  14. Reduction of phosphorus diffusion in germanium by fluorine implantation

    NASA Astrophysics Data System (ADS)

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  15. Materials and Fabrication Issues for Large Machined Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Hale, L C

    2006-05-22

    LLNL has successfully fabricated small (1.5 cm{sup 2} area) germanium immersion gratings. We studied the feasibility of producing a large germanium immersion grating by means of single point diamond flycutting. Our baseline design is a 63.4o blaze echelle with a 6 cm beam diameter. Birefringence and refractive index inhomogeneity due to stresses produced by the crystal growth process are of concern. Careful selection of the grating blank and possibly additional annealing to relieve stress will be required. The Large Optics Diamond Turning Machine (LODTM) at LLNL is a good choice for the fabrication. It can handle parts up to 1.5 meter in diameter and 0.5 meter in length and is capable of a surface figure accuracy of better than 28 nm rms. We will describe the machine modifications and the machining process for a large grating. A next generation machine, the Precision Optical Grinder and Lathe (POGAL), currently under development has tighter specifications and could produce large gratings with higher precision.

  16. Initial Component Testing for a Germanium Array Cryostat

    SciTech Connect

    Keillor, Martin E.; Aalseth, Craig E.; Day, Anthony R.; Fast, James E.; Hoppe, Eric W.; Hyronimus, Brian J.; Hossbach, Todd W.; Seifert, Allen

    2009-06-01

    This report describes progress on the construction of two ultra-low-background cryostats that are part of the NA-22 funded “Radionuclide Laboratories” (RN Labs) project. Each cryostat will house seven high-purity germanium crystals (HPGe). These cryostats are being built from a limited set of materials that are known to have very low levels of radioactive impurities. The RN Labs instrument is designed to take advantage of low background performance, high detection efficiency, and γ-γ coincidence signatures to provide unprecedented gamma spectroscopy sensitivity. The project is focused on improving gamma analysis capabilities for nuclear detonation detection (NDD) applications. The instrument also has the potential for basic nuclear physics research. Section 1 provides the background for the project. Section 2 discusses germanium crystal acceptance testing. Design problems were found after the first delivery of new detectors from the vendor, Canberra Semiconductors. The first four crystals were returned for repair, resulting in a delay in crystal procurement. Section 3 provides an update on copper electroforming. In general, electroforming parts for RN Labs has proceeded smoothly, but there have been recent problems in electroforming three large copper parts necessary for the project. Section 4 describes the first round of testing for the instrument: anti-cosmic scintillator testing, electronics testing, and initial vacuum testing. Section 5 concludes with an overall description of the state of the project and challenges that remain.

  17. Background Reduction For Germanium Double Beta Decay Experiments

    SciTech Connect

    Gomez, H.; Cebrian, S.; Morales, J.; Villar, J. A.

    2007-03-28

    The new generation experiments to search for the neutrinoless double beta decay of 76Ge (Q{beta}{beta}=2039keV) using enriched germanium detectors, need to reach a background level of {approx}10-3 c keV-1 kg-1 y-1 in the Region of Interest (RoI: 2-2.1 MeV) that would have, for 70 kg of germanium enriched to 86% in 76Ge, 3 keV of FWHM and 5 years of measuring time, a sensitivity on the effective neutrino mass of {<=} 40 meV. To reduce the background level close to the value needed, we have to combine several techniques. Three of the most important points to study are: segmentation and granularity of the crystal and spatial resolution of the detector directly correlated with an offline Pulse Shape Analysis (PSA). Preliminary studies about these strategies for background reduction were developed during last months, obtaining some promising results.

  18. Evaluating a new segmented germanium detector contact technology

    NASA Astrophysics Data System (ADS)

    Jackson, E. G.; Lister, C. J.; Chowdhury, P.; Hull, E.; Pehl, R.

    2012-10-01

    New technologies for making gamma ray detectors position sensitive have many applications in space science, medical imaging, homeland security, and in nuclear structure research. One promising approach uses high-purity germanium wafers with the planar surfaces segmented into orthogonal strip patterns forming a Double-Sided Strip Detector (DSSD). The combination of data from adjoining strips, or pixels, is physics-rich for Compton image formation and polarization studies. However, sensitivity to charge loss and various kinds of cross-talk [1] have limited the usefulness of first generation devices. We are investigating new contact technologies, developed by PhDs Co [2], based on amorphous-germanium and yttrium contacts RF sputter deposited to a thickness of ˜ 1000 å. New techniques allow both physical and photolithographic segmentation of the contacts with inter-strip gap widths of 0.25 mm. These modifications should improve all aspects of charge collection. The new detector technology employs the same material and fabrication technique for both the n- and p- contacts, thus removing artificial asymmetry in the data. Results from tests of cross-talk, charge collection, and scattering asymmetry will be presented and compared with older technologies. This mechanically cooled counter, NP-7, seems to represent a breakthrough.[4pt] [1] S. Gros et al., Nucl. Inst. Meth. A 602, 467 (2009).[0pt] [2] E. Hull et al Nucl Inst Meth A 626, 39 (2011)

  19. Reduction of phosphorus diffusion in germanium by fluorine implantation

    SciTech Connect

    El Mubarek, H. A. W.

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  20. Crystal Growth of Germanium-Silicon Alloys on the ISS

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2015-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The experiments are part of the investigation "Influence of Containment on the Growth of Silicon-Germanium" (ICESAGE). The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. This meniscus can exist over a much larger range of processing parameters in microgravity and the meniscus is more stable under microgravity conditions. The plans for the flight experiments will be described.

  1. Germanium as an integrated resistor material in RF MEMS switches

    NASA Astrophysics Data System (ADS)

    Grenier, K.; Bordas, C.; Pinaud, S.; Salvagnac, L.; Dubuc, D.

    2007-05-01

    This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS switches, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a great electrical characteristic with a very high resistivity value. This property is particularly interesting for the elaboration of integrated resistors for RF components as it assures miniaturised resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in the entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors, without any RF perturbations.

  2. Characterisation of the SmartPET planar Germanium detectors

    NASA Astrophysics Data System (ADS)

    Boston, H. C.; Boston, A. J.; Cooper, R. J.; Cresswell, J.; Grint, A. N.; Mather, A. R.; Nolan, P. J.; Scraggs, D. P.; Turk, G.; Hall, C. J.; Lazarus, I.; Berry, A.; Beveridge, T.; Gillam, J.; Lewis, R.

    2007-08-01

    Small Animal Reconstruction PET (SmartPET) is a project funded by the UK medical research council (MRC) to demonstrate proof of principle that Germanium can be utilised in Positron Emission Tomography (PET). The SmartPET demonstrator consists of two orthogonal strip High Purity Germanium (HPGe) planar detectors manufactured by ORTEC. The aim of the project is to produce images of an internal source with sub mm 3 spatial resolution. Before this image can be achieved the detectors have to be fully characterised to understand the response at any given location to a γ-ray interaction. This has been achieved by probing the two detectors at a number of specified points with collimated sources of various energies and strengths. A 1 mm diameter collimated beam of photons was raster scanned in 1 mm steps across the detector. Digital pulse shape data were recorded from all the detector channels and the performance of the detector for energy and position determination has been assessed. Data will be presented for the first SmartPET detector.

  3. Sulfidation of iron at high temperatures and diffusion kinetics in ferrous sulfide

    SciTech Connect

    Danielewski, M.; Mrowec, S.; Stoklosa, A.

    1982-02-01

    The kinetics and mechanism of iron sulfidation have been studied as a function of temperature (950-1200 K) and sulfur pressure (10/sup -3/ 0.065 atm). It has been stated that a compact Fe/sub 1-y/ S scale on iron grows according to the parabolic rate law as a result of outward lattice diffusion of metal ions through cation vacancies. The activation energy of sulfidation increases with sulfur pressure and the 1/n exponent increases with temperature. This nontypical dependence of iron sulfidation kinetics on temperature and pressure results from the analogous effect of both these parameters on defect concentration in ferrous sulfide. The chemical diffusion coefficients, D/sub FeS/ , and diffusion coefficients of defects, D/sub d/ , in ferrous sulfide have been calculated on the basis of parabolic rate contacts of iron sulfidation and deviations from stoichiometry in ferrous sulfide. It has been shown that D/sub FeS/ is practically independent of cation vacancy concentration whereas the diffusion coefficient of defects depends strongly on that parameter. A comparison of self-diffusion coefficients of iron in Fe/sub 1-y/ S calculated from the kinetics of iron sulfidation to those obtained from radioisotopic studies indicates that within the range studied of temperatures and sulfur vapor pressures the outward diffusion of iron across the scale occurs preferentially along the c axis of columnar ferrous sulfide crystals.

  4. Ridding Groundwater of Hydrogen Sulfide. Part 1.

    ERIC Educational Resources Information Center

    Lochrane, Thomas G.

    1979-01-01

    This article is the first in a series reviewing the problems associated with hydrogen sulfide in drinking water sources. Discussion centers on identification of a cost-effective balance between aeration and chlorination treatment operations. (AS)

  5. Selenium sulfide: adjunctive therapy for tinea capitis.

    PubMed

    Allen, H B; Honig, P J; Leyden, J J; McGinley, K J

    1982-01-01

    Selenium sulfide lotion used as a shampoo has been shown to be an effective adjunctive agent to griseofulvin in the treatment of tinea capitis. Of 16 children with Trichophyton tonsurans infections 15 had negative fungal cultures at two weeks following a regimen of daily oral griseofulvin and selenium sulfide shampooing twice weekly. All patients treated with griseofulvin alone or in combination with either a bland shampoo or topical clotrimazole had positive cultures not only at the two-week interval but also as long as eight weeks later. In vitro analysis shows selenium sulfide to be sporicidal, correlating well with the in vivo observations. It is postulated that selenium sulfide usage may lessen the chances for spreading of infectious spores to other individuals.

  6. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    NASA Astrophysics Data System (ADS)

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of <100> signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  7. Advances in fractal germanium micro/nanoclusters induced by gold: microstructures and properties.

    PubMed

    Chen, Zhiwen; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

    2014-02-01

    Germanium materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, electrical, optical, and thermoelectric power properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the microstructures and various properties of the fractal germanium micro/nanoclusters induced by gold prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the integer and non-integer dimensional germanium micro/nanoclusters such as nanoparticles, nanorings, and nanofractals induced by gold and annealing. In particular, the nonlinear electrical behavior of a gold/germanium bilayer film with the interesting nanofractal is discussed in detail. In addition, the third-order optical nonlinearities of the fractal germanium nanocrystals embedded in gold matrix will be summarized by using the sensitive and reliable Z-scan techniques aimed to determine the nonlinear absorption coefficient and nonlinear refractive index. Finally, we emphasize the thermoelectric power properties of the gold/germanium bilayer films. The thermoelectric power measurement is considered to be a more effective method than the conductivity for investigating superlocalization in a percolating system. This research may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, germanium thin films with a variety of fascinating micro/nanoclusters will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.

  8. Inelasticity and precipitation of germanium from a solid solution in Al-Ge binary alloys

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.

    2015-08-01

    The influence of precipitation of germanium atoms in a solid solution on the dependence of the inelasticity characteristics on the germanium content in aluminum-germanium alloys prepared by directional crystallization has been studied. It has been shown that the Young's modulus defect, the amplitude-dependent decrement, and the microplastic flow stress at a specified cyclic strain amplitude have extreme values at the eutectic germanium content in the alloy. The eutectic composition of the alloy undergoes a ductilebrittle transition. It has been found that there is a correlation between the dependences of the Young's modulus defect, amplitude-dependent decrement, microplastic flow stress, and specific entropy of the exothermal process of germanium precipitation on the germanium content in the hypoeutectic alloy. The concentration dependences of the inelasticity characteristics and their changes after annealing have been explained by the change in the resistance to the motion of intragrain dislocations due to different structures of the Guinier-Preston zones formed during the precipitation of germanium atoms.

  9. The Search for Interstellar Sulfide Grains

    NASA Technical Reports Server (NTRS)

    Keller, Lindsay P.; Messenger, Scott

    2010-01-01

    The lifecycle of sulfur in the galaxy is poorly understood. Fe-sulfide grains are abundant in early solar system materials (e.g. meteorites and comets) and S is highly depleted from the gas phase in cold, dense molecular cloud environments. In stark contrast, sulfur is essentially undepleted from the gas phase in the diffuse interstellar medium, indicating that little sulfur is incorporated into solid grains in this environment. It is widely believed that sulfur is not a component of interstellar dust grains. This is a rather puzzling observation unless Fe-sulfides are not produced in significant quantities in stellar outflows, or their lifetime in the ISM is very short due to rapid destruction. Fe sulfide grains are ubiquitous in cometary samples where they are the dominant host of sulfur. The Fe-sulfides (primarily pyrrhotite; Fe(1-x)S) are common, both as discrete 0.5-10 micron-sized grains and as fine (5-10 nm) nanophase inclusions within amorphous silicate grains. Cometary dust particles contain high abundances of well-preserved presolar silicates and organic matter and we have suggested that they should contain presolar sulfides as well. This hypothesis is supported by the observation of abundant Fe-sulfides grains in dust around pre- and post-main sequence stars inferred from astronomical spectra showing a broad 23 micron IR feature due to FeS. Fe-sulfide grains also occur as inclusions in bona fide circumstellar amorphous silicate grains and as inclusions within deuterium-rich organic matter in cometary dust samples. Our irradiation experiments show that FeS is far more resistant to radiation damage than silicates. Consequently, we expect that Fe sulfide stardust should be as abundant as silicate stardust in solar system materials.

  10. Upper critical field of copper molybdenum sulfide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Woollam, J. A.

    1978-01-01

    The upper critical field of sintered and sputtered copper molybdenum sulfide Cu(x)Mo6S8 was measured and found to exceed the Werthamer, Helfand, and Hohenberg (1966) value for a type II superconductor characterized by dirty limit, weak isotropic electron phonon coupling, and no paramagnetic limiting. It is suggested that the enhancement results from anisotropy or clean limit or both. Other ternary molybdenum sulfides appear to show similar anomalies.

  11. Mechanically Cooled Large-Volume Germanium Detector Systems for Nuclear Explosion Monitoring

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.; Bowyer, Ted W.

    2006-09-21

    Compact maintenance free mechanical cooling systems are being developed to operate large volume (~570 cm3, ~3 kg, 140% or larger) germanium detectors for field applications. We are using a new generation of Stirling-cycle mechanical coolers for operating the very largest volume germanium detectors with absolutely no maintenance or liquid nitrogen requirements. The user will be able to leave these systems unplugged on the shelf until needed. The flip of a switch will bring a system to life in ~1 hour for measurements. The maintenance-free operating lifetime of these detector systems will exceed five years. These features are necessary for remote long-duration liquid-nitrogen free deployment of large-volume germanium gamma-ray detector systems for Nuclear Explosion Monitoring (NEM). The Radionuclide Aerosol Sampler/Analyzer (RASA) will greatly benefit from the availability of such detectors by eliminating the need for liquid nitrogen at RASA sites while still allowing the very largest available germanium detectors to be utilized. These mechanically cooled germanium detector systems being developed here will provide the largest, most sensitive detectors possible for use with the RASA. To provide such systems, the appropriate technical fundamentals are being researched. Mechanical cooling of germanium detectors has historically been a difficult endeavor. The success or failure of mechanically cooled germanium detectors stems from three main technical issues: temperature, vacuum, and vibration. These factors affect one another. There is a particularly crucial relationship between vacuum and temperature. These factors will be experimentally studied both separately and together to insure a solid understanding of the physical limitations each factor places on a practical mechanically cooled germanium detector system for field use. Using this knowledge, a series of mechanically cooled germanium detector prototype systems are being designed and fabricated. Our collaborators

  12. Synthesis and characterization of germanium nanoparticles for flexible thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Chiu, Hsiang Wei (Ivy)

    Photovoltaic cells based on low-cost polycrystalline and nanocrystalline materials are of great interest for both scientific and industrial purposes because of their intriguing properties found in semiconductor nanoparticles as well as the need to make high-energy conversion photovoltaics. The main theme of this dissertation is the synthesis of such nanoparticles of elemental germanium. Butyl-capped crystalline germanium nanoparticles were synthesized at room temperature in dimethoxymethane via the reduction of germanium tetrachloride with sodium naphthalide and the subsequent reaction with n-butyl Grignard. The nanoparticles were isolated in hexane and characterized by transmission electron microscopy, selected area electron diffraction, energy-dispersive X-ray spectroscopy, elemental analysis, X-ray powder diffraction, ultraviolet-visible spectroscopy, and photoluminescence spectroscopy. When heated under vacuum between 300--550°C, the as prepared nanoparticles become amorphous and grow in size. At 561°C, a phase change is observed which is associated with the change from the amorphous to crystalline. Numerous exothermic peaks were found in between 900--950°C under thermogravimetric analysis. Detailed studies of this reduction synthesis have been performed to optimize the synthetic route. The germanium nanoparticle nucleation is influenced by variations of reductant, concentration, temperature, and synthesis. Results indicate that the reduction route of germanium nanoparticles follows similar kinetics at room temperature, as does the related II-VI nanoparticle synthetic route. The reduction route was also found to produce a polymeric side product that can be removed at 300°C under vacuum. Under an in-situ heating experiment, this germanium containing polymer acts as a germanium source for the formation of small germanium nanoparticles at temperatures above 300°C. At temperatures above 400°C the polymer further acts to build germanium films. The metathesis

  13. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

  14. Influence of germanium on the formation of thermal donors in silicon

    SciTech Connect

    Dashevskii, M.Ya.; Dokuchaeva, A.A.; Anisimov K.I.

    1987-03-01

    In silicon samples doped with germanium to a concentration 5 x 10/sup 19/-10/sup 20/ cm/sup -3/ after heat treatment at 450/sup 0/C the breakdown of the thermal donors and restoration of the electrical resistivity to a value close to the resistivity of the unannealed samples, proceed faster, than in samples not doped with germanium. It is indirectly confirmed by the assumption that the oxygen solubility in germanium-doped silicon samples is higher at 450/sup 0/C than in the undoped samples.

  15. Hydrogen sulfide and translational medicine

    PubMed Central

    Guo, Wei; Cheng, Ze-yu; Zhu, Yi-zhun

    2013-01-01

    Hydrogen sulfide (H2S) along with carbon monoxide and nitric oxide is an important signaling molecule that has undergone large numbers of fundamental investigations. H2S is involved in various physiological activities associated with the regulation of homeostasis, vascular contractility, pro- and anti-inflammatory activities, as well as pro- and anti-apoptotic activities etc. However, the actions of H2S are influenced by its concentration, reaction time, and cell/disease types. Therefore, H2S is a signaling molecule without definite effect. The use of existing H2S donors is limited because of the instant release and short lifetime of H2S. Thus, translational medicine involving the sustained and controlled release of H2S is of great value for both scientific and clinical uses. H2S donation can be manipulated by different ways, including where H2S is given, how H2S is donated, or the specific structures of H2S-releasing drugs and H2S donor molecules. This review briefly summarizes recent progress in research on the physiological and pathological functions of H2S and H2S-releasing drugs, and suggests hope for future investigations. PMID:24096643

  16. Hydrogen Sulfide as a Gasotransmitter

    PubMed Central

    Gadalla, Moataz M.; Snyder, Solomon H.

    2010-01-01

    Nitric oxide (NO) and carbon monoxide (CO) are well established as messenger molecules throughout the body, gasotransmitters, based on striking alterations in mice lacking the appropriate biosynthetic enzymes. Hydrogen sulfide (H2S) is even more chemically reactive, but till recently there was little definitive evidence for its physiologic formation. Cystathionine β-synthase (CBS, EC 4.2.1.22), and Cystathionine γ-lyase (CSE; EC 4.4.1.1), also known as cytathionase, can generate H2S from cyst(e)ine. Very recent studies with mice lacking these enzymes have established that CSE is responsible for H2S formation in the periphery, while in the brain CBS is the biosynthetic enzyme. Endothelial-derived relaxing factor (EDRF) activity is reduced 80% in the mesenteric artery of mice with deletion of CSE, establishing H2S as a major physiologic EDRF. H2S appears to signal predominantly by S-sulfhydrating cysteines in its target proteins, analogous to S-nitrosylation by NO. Whereas S-nitrosylation typically inhibits enzymes, S-sulfhydration activates them. S-nitrosylation basally affects 1–2% of its target proteins, while 10–25% of H2S target proteins are S-sulfhydrated. In summary, H2S appears to be a physiologic gasotransmitter of comparable importance to NO and CO. PMID:20067586

  17. NEAR-CONTINUOUS MEASUREMENT OF HYDROGEN SULFIDE AND CARBONYL SULFIDE BY AN AUTOMATIC GAS CHROMATOGRAPH

    EPA Science Inventory

    An automatic gas chromatograph with a flame photometric detector that samples and analyzes hydrogen sulfide and carbonyl sulfide at 30-s intervals is described. Temperature programming was used to elute trace amounts of carbon disulfide present in each injection from a Supelpak-S...

  18. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  19. Electron temperature and density measurements of laser induced germanium plasma

    NASA Astrophysics Data System (ADS)

    Shakeel, Hira; Arshad, Saboohi; Haq, S. U.; Nadeem, Ali

    2016-05-01

    The germanium plasma produced by the fundamental harmonics (1064 nm) of Nd:YAG laser in single and double pulse configurations have been studied spectroscopically. The plasma is characterized by measuring the electron temperature using the Boltzmann plot method for neutral and ionized species and electron number density as a function of laser irradiance, ambient pressure, and distance from the target surface. It is observed that the plasma parameters have an increasing trend with laser irradiance (9-33 GW/cm2) and with ambient pressure (8-250 mbar). However, a decreasing trend is observed along the plume length up to 4.5 mm. The electron temperature and electron number density are also determined using a double pulse configuration, and their behavior at fixed energy ratio and different interpulse delays is discussed.

  20. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  1. Reliability assessment of germanium gate stacks with promising initial characteristics

    NASA Astrophysics Data System (ADS)

    Lu, Cimang; Lee, Choong Hyun; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2015-02-01

    This work reports on the reliability assessment of germanium (Ge) gate stacks with promising initial electrical properties, with focus on trap generation under a constant electric stress field (Estress). Initial Ge gate stack properties do not necessarily mean highly robust reliability when it is considered that traps are newly generated under high Estress. A small amount of yttrium- or scandium oxide-doped GeO2 (Y-GeO2 or Sc-GeO2, respectively) significantly reduces trap generation in Ge gate stacks without deterioration of the interface. This is explained by the increase in the average coordination number (Nav) of the modified GeO2 network that results from the doping.

  2. A pseudo-single-crystalline germanium film for flexible electronics

    SciTech Connect

    Higashi, H.; Yamada, S.; Kanashima, T.; Hamaya, K.; Kasahara, K.; Park, J.-H.; Miyao, M.; Kudo, K.; Okamoto, H.; Moto, K.; Tsunoda, I.

    2015-01-26

    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

  3. Anomalous compression behavior of germanium during phase transformation

    SciTech Connect

    Yan, Xiaozhi; Tan, Dayong; Ren, Xiangting; Yang, Wenge E-mail: duanweihe@scu.edu.cn; He, Duanwei E-mail: duanweihe@scu.edu.cn; Mao, Ho-Kwang

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  4. Noise performance of high-efficiency germanium quantum dot photodetectors

    NASA Astrophysics Data System (ADS)

    Siontas, Stylianos; Liu, Pei; Zaslavsky, Alexander; Pacifici, Domenico

    2016-08-01

    We report on the noise analysis of high performance germanium quantum dot (Ge QD) photodetectors with responsivity up to ˜2 A/W and internal quantum efficiency up to ˜400%, over the 400-1100 nm wavelength range and at a reverse bias of -10 V. Photolithography was performed to define variable active-area devices that show suppressed dark current, leading to a higher signal-to-noise ratio, up to 105, and specific detectivity D * ≃ 6 × 10 12 cm Hz 1 / 2 W-1. These figures of merit suggest Ge QDs as a promising alternative material for high-performance photodetectors working in the visible to near-infrared spectral range.

  5. Giant pop-ins and amorphization in germanium during indentation

    NASA Astrophysics Data System (ADS)

    Oliver, David J.; Bradby, Jodie E.; Williams, Jim S.; Swain, Michael V.; Munroe, Paul

    2007-02-01

    Sudden excursions of unusually large magnitude (>1 μm), "giant pop-ins," have been observed in the force-displacement curve for high load indentation of crystalline germanium (Ge). A range of techniques including Raman microspectroscopy, focused ion-beam cross sectioning, and transmission electron microscopy, are applied to study this phenomenon. Amorphous material is observed in residual indents following the giant pop-in. The giant pop-in is shown to be a material removal event, triggered by the development of shallow lateral cracks adjacent to the indent. Enhanced depth recovery, or "elbowing," observed in the force-displacement curve following the giant pop-in is explained in terms of a compliant response of plates of material around the indent detached by lateral cracking. The possible causes of amorphization are discussed, and the implications in light of earlier indentation studies of Ge are considered.

  6. FTIR and DFT studies of Novel Germanium-Carbon Clusters

    NASA Astrophysics Data System (ADS)

    Robbins, D. L.; Rittby, C. M. L.; Graham, W. R. M.

    2001-10-01

    The vibrational fundamentals and structures of germanium-carbon clusters formed by laser ablation and trapped in solid Ar are currently under investigation. The determination of the ground state geometries and vibrational fundamentals are facilitated by the comparison of frequencies and ^13C isotopic shifts measured by Fourier transform infrared spectroscopy with the predictions of density functional theory. The identification of the ν3 mode of linear GeC_3Ge (observed at 1920.7 cm-1 ) has been made.(D.L.Robbins, C.M.L. Rittby, and W.R.M. Graham J. Chem. Phys. 114, 3570 (2001).) The results of further calculations and assignments on larger species such as GeC4 and GeC9 will be reported.

  7. Germanium-Vacancy Single Color Centers in Diamond.

    PubMed

    Iwasaki, Takayuki; Ishibashi, Fumitaka; Miyamoto, Yoshiyuki; Doi, Yuki; Kobayashi, Satoshi; Miyazaki, Takehide; Tahara, Kosuke; Jahnke, Kay D; Rogers, Lachlan J; Naydenov, Boris; Jelezko, Fedor; Yamasaki, Satoshi; Nagamachi, Shinji; Inubushi, Toshiro; Mizuochi, Norikazu; Hatano, Mutsuko

    2015-01-01

    Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center. PMID:26250337

  8. Proton irradiation of germanium isotope multilayer structures at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Schneider, S.; Bracht, H.; Petersen, M. C.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted

    2008-02-01

    Irradiation of germanium (Ge) isotope heterostructures with 2.5 MeV protons have been performed at 550 °C. The applied proton flux was varied between 1.0 and 1.5 μA leading to various rates of Frenkel pair production. After irradiation, concentration profiles of the Ge isotopes were recorded by means of secondary ion mass spectrometry (SIMS). An inhomogeneous broadening of the isotope structure was observed. In addition to the effect of irradiation enhanced self-diffusion, an influence of the formation of microscopic defects on the detected broadening was ascertained. Atomic force and scanning electron microscopy show that the microscopic defects are most probably resulting from an aggregation of vacancies formed during irradiation. Numerical analysis of Ge profiles not disturbed by microdefect formation indicates a significant contribution of self-interstitials to self-diffusion under irradiation.

  9. Hydrogen concentration and distribution in high-purity germanium crystals

    SciTech Connect

    Hansen, W.L.; Haller, E.E.; Luke, P.N.

    1981-10-01

    High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10/sup 15/cm/sup -3/ has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium ..beta..-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H/sub 2/ with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10/sup 7/ cm/sup -3/ and are estimated to contain 10/sup 8/ H atoms each.

  10. Tunable split-ring resonators using germanium telluride

    NASA Astrophysics Data System (ADS)

    Kodama, C. H.; Coutu, R. A.

    2016-06-01

    We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.

  11. Method of manufacturing a niobium-aluminum-germanium superconductive material

    DOEpatents

    Wang, John L.; Pickus, Milton R.; Douglas, Kent E.

    1980-01-01

    A method for manufacturing flexible Nb.sub.3 (Al,Ge) multifilamentary superconductive material in which a sintered porous niobium compact is infiltrated with an aluminum-germanium alloy and thereafter deformed and heat treated in a series of steps at different successively higher temperatures preferably below 1000.degree. C. to produce filaments composed of Nb.sub.3 (Al,G3) within the compact. By avoiding temperatures in excess of 1000.degree. C. during the heat treatment, cladding material such as copper can be applied to facilitate a deformation step preceding the heat treatment and can remain in place through the heat treatment to also serve as a temperature stabilizer for supeconductive material produced. Further, these lower heat treatment temperatures favor formation of filaments with reduced grain size and, hence with more grain boundaries which in turn increase the current-carrying capacity of the superconductive material.

  12. Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel.

    PubMed

    Lambert, P. M.

    1998-03-23

    The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation. The precursor gel is shown by FT-IR to be a diphasic mixture of hydrous hafnia and an ammonium germanate gel. Thermal treatment drives the crystallization of a hafnium-rich, simple tetragonal Hf(1)(-)(x)()Ge(x)()O(2) structure at 893 degrees C, that upon further heating to 1200 degrees C yields scheelite HfGeO(4).

  13. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Szofran, F. R.; Cobb, S. D.; Schweizer, M.; Walker, J. S.

    2005-01-01

    A series of (100)-oriented gallium-doped germanium crystals has been grown by the vertical Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c)) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. Tm(sup c) decreases as the aspect ratio of the melt increases, and approaches the theoretical limit expected for an infinite cylinder. Intentional interface demarcations are introduced by pulsing the RMF on and off The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased.

  14. Comparison of Germanium Telluride (GeTe) Crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Comparison of Germanium Telluride (GeTe) Crystals grown on Earth (left) and in space (right) during the Skylab SL-3 mission. These crystals were grown using a vapor transport crystal growth method in the Multipurpose Electric Furnace System (MEFS). Crystals grown on earth are needles and platelettes with distorted surfaces and hollow growth habits. The length of the ground-based needle is approximately 2 mm and the average lenth of the platelets is 1 mm. The dull appearance of the Skylab crystals resulted from condensation of the transport agent during the long cooling period dictated by the Skylab furnace. In a dedicated process, this would be prevented by removing the ampoule from the furnace and quenching the vapor source.

  15. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Walker, J. S.; Schweizer, M.; Cobb, S. D.; Szofran, F. R.

    2004-01-01

    A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The experimental data indicate that Tm(sup c) increases as the aspect ratio of the melt decreases. Modeling calculations predicting Tm(sup c) as a function of aspect ratio are in reasonable agreement with the experimental data. The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

  16. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Cobb, S. D.; Walker, J. S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). The RMF has a marked affect on the interface shape, changing it from concave to nearly flat. The onset of time-dependent flow instabilities occurs when the critical magnetic Taylor number is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The critical magnetic Taylor number is a sensitive function of the aspect ratio and, as the crystal grows under a constant applied magnetic field, the induced striations change from nonperiodic to periodic, undergo a period-doubling transition, and then cease to exist. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

  17. Young’s modulus of [111] germanium nanowires

    SciTech Connect

    Maksud, M.; Yoo, J.; Harris, C. T.; Palapati, N. K. R.; Subramanian, A.

    2015-11-02

    Our paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ~75%. Furthermore, with increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  18. Young’s modulus of [111] germanium nanowires

    SciTech Connect

    Maksud, M.; Palapati, N. K. R.; Subramanian, A.; Yoo, J.; Harris, C. T.

    2015-11-01

    This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  19. Characteristics of GRIFFIN high-purity germanium clover detectors

    NASA Astrophysics Data System (ADS)

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  20. An experimental characterisation of a Broad Energy Germanium detector

    NASA Astrophysics Data System (ADS)

    Harkness-Brennan, L. J.; Judson, D. S.; Boston, A. J.; Boston, H. C.; Colosimo, S. J.; Cresswell, J. R.; Nolan, P. J.; Adekola, A. S.; Colaresi, J.; Cocks, J. F. C.; Mueller, W. F.

    2014-10-01

    The spectroscopic and charge collection performance of a BE2825 Broad Energy Germanium (BEGe) detector has been experimentally investigated. The efficiency and energy resolution of the detector have been measured as a function of energy and the noise contributions to the preamplifier signal have been determined. Collimated gamma-ray sources mounted on an automated 3-axis scanning table have been used to study the variation in preamplifier signal shape with gamma-ray interaction position in the detector, so that the position-dependent charge collection process could be characterised. A suite of experimental measurements have also been undertaken to investigate the performance of the detector as a function of bias voltage and we report on anomalous behaviour observed when the detector was operating close to the depletion voltage.

  1. Towards monolithic integration of germanium light sources on silicon chips

    NASA Astrophysics Data System (ADS)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  2. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    NASA Astrophysics Data System (ADS)

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  3. Development of silicon-germanium visible-near infrared arrays

    NASA Astrophysics Data System (ADS)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  4. An aeronomical application of a germanium near infrared (NIR) detector

    SciTech Connect

    Noto, J.; Kerr, R.B.; Rudy, R.J.; Williams, R.; Hecht, J.H.

    1994-12-31

    A collaboration between Boston University and the Aerospace corporation has resulted in a germanium based detector used in conjunction with an infrared optimized Fabry-Perot spectrometer. Gold plated mirrors were installed and the appropriate transmissive optics are used in the Fabry-Perot to optimize the NIR transmission. The detector is a germanium PIN diode coated with a layer of silicon-nitride. Current produced by the detector is measured by using a Capacitive Trans-Impedance Amplifier (CITA). An A/D converter samples the amplified capacitor voltage and outputs a 12 bit word that is then passed on to the controlling computer system. The detector, amplifier, and associated electronics are mounted inside a standard IR dewar and operated at 77 K. The authors have operated this detector and spectrometer system at Millstone Hill for about 6 months. Acceptable noise characteristics, a NEP of 10{sup {minus}17} watts, and a QE of 90% at 1.2 {micro}m, have been achieved with an amplifier gain of 200. The system is currently configured for observations of thermospheric helium, and has made the first measurement of the He 10,830 {angstrom} nightglow emission isolated from OH contamination. In an effort to both increase the sensitivity of the Fabry-Perot in the visible and to adapt it for planetary astronomy the authors have entered into a collaboration with CIDTEC. A Charge Injection Detector or CID has some unique capabilities that distinguish it from a CCD and the authors are evaluating it as a detector for the Hadinger fringe pattern produced by a Fabry-Perot. The CID allows non-destructive readout and random access of individual pixels with in the entire frame, this allows for both ``electronic masking`` of bright objects and allows each fringe to be observed without having to readout a large number of dark pixels.

  5. Epidemiological survey of workers exposed to inorganic germanium compounds

    PubMed Central

    Swennen, B; Mallants, A; Roels, H; Buchet, J; Bernard, A; Lauwerys, R; Lison, D

    2000-01-01

    OBJECTIVES—To assess occupational exposure to inorganic germanium (Ge) in workers from a producing plant, and to assess the health of these workers, with a special focus on respiratory, kidney, and liver functions.
METHODS—Cross sectional study of 75 workers exposed to Ge and 79 matched referents. Exposure was characterised by measuring air and urine concentrations of the element during a typical working week, and health was assessed by a questionnaire, clinical examination, lung function testing, chest radiography, and clinical chemistry in serum and urine, including high and low molecular weight urinary proteins.
RESULTS—Airborne concentrations of Ge (inhalable fraction) ranged from 0.03 to 300 µg/m, which was reflected by increased urinary excretion of Ge (0.12-200 µg/g creatinine, after the shift at the end of the working week). Lung, liver, and haematological variables were not significantly different between referents and workers exposed to Ge. A slightly higher urinary concentration of high molecular weight proteins (albumin and transferrin) was found in workers exposed to Ge, possibly reflecting subclinical glomerular changes. No relation was found between the intensity or duration of exposure and the urinary concentration of albumin. No difference between referents and workers exposed to Ge was found for other renal variables.
CONCLUSIONS—Measurement of urinary Ge can detect occupational exposure to inorganic Ge and its compounds. It is prudent to recommend the monitoring of renal variables in workers exposed to Ge.


Keywords: inorganic germanium; occupational exposure; biological monitoring PMID:10810110

  6. Research progress of Si-based germanium materials and devices

    NASA Astrophysics Data System (ADS)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  7. Continuous measurement of dissolved sulfide in sewer systems.

    PubMed

    Sutherland-Stacey, L; Corrie, S; Neethling, A; Johnson, I; Gutierrez, O; Dexter, R; Yuan, Z; Keller, J; Hamilton, G

    2008-01-01

    Sulfides are particularly problematic in the sewage industry. Hydrogen sulfide causes corrosion of concrete infrastructure, is dangerous at high concentrations and is foul smelling at low concentrations. Despite the importance of sulfide monitoring there is no commercially available system to quantify sulfide in waste water. In this article we report on our use of an in situ spectrometer to quantify bisulfide in waste water and additional analysis with a pH probe to calculate total dissolved sulfide. Our results show it is possible to use existing commercially available and field proven sensors to measure sulfide to mg/l levels continuously with little operator intervention and no sample preparation. PMID:18309215

  8. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

    1996-01-01

    A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

  9. Animal adaptations for tolerance and exploitation of poisonous sulfide.

    PubMed

    Grieshaber, M K; Völkel, S

    1998-01-01

    Many aquatic animal species can survive sulfide exposure to some extent through oxidation of the sulfide, which results mainly in thiosulfate. In several species, sulfide oxidation is localized in the mitochondria and is accompanied by ATP synthesis. In addition, blood-based and intracellular compounds can augment sulfide oxidation. The formation of thiosulfate requires oxygen, which results in an increase in oxygen consumption of some species. If not all sulfide is detoxified, cytochrome C oxidase is inhibited. Under these conditions, a sulfide-dependent anaerobic energy metabolism commences. PMID:9558453

  10. Ge-rich silicon germanium as a new platform for optical interconnects on silicon

    NASA Astrophysics Data System (ADS)

    Vakarin, Vladyslav; Chaisakul, Papichaya; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Coudevylle, Jean Rene; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2016-05-01

    We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si1-xGex guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.

  11. Mechanically Cooled Large-Volume Germanium Detector Systems for Nuclear Explosion Monitoring DOENA27323-1

    SciTech Connect

    Hull, E.L.

    2006-07-28

    Compact maintenance free mechanical cooling systems are being developed to operate large volume germanium detectors for field applications. To accomplish this we are utilizing a newly available generation of Stirling-cycle mechanical coolers to operate the very largest volume germanium detectors with no maintenance. The user will be able to leave these systems unplugged on the shelf until needed. The flip of a switch will bring a system to life in ~ 1 hour for measurements. The maintenance-free operating lifetime of these detector systems will exceed 5 years. These features are necessary for remote long-duration liquid-nitrogen free deployment of large-volume germanium gamma-ray detector systems for Nuclear Explosion Monitoring. The Radionuclide Aerosol Sampler/Analyzer (RASA) will greatly benefit from the availability of such detectors by eliminating the need for liquid nitrogen at RASA sites while still allowing the very largest available germanium detectors to be reliably utilized.

  12. Mechanically Cooled Large-Volume Germanium Detector Systems for Neclear Explosion Monitoring DOENA27323-2

    SciTech Connect

    Hull, E.L.

    2006-10-30

    Compact maintenance free mechanical cooling systems are being developed to operate large volume high-resolution gamma-ray detectors for field applications. To accomplish this we are utilizing a newly available generation of Stirling-cycle mechanical coolers to operate the very largest volume germanium detectors with no maintenance. The user will be able to leave these systems unplugged on the shelf until needed. The maintenance-free operating lifetime of these detector systems will exceed 5 years. Three important factors affect the operation of mechanically cooled germanium detectors: temperature, vacuum, and vibration. These factors will be studied in the laboratory at the most fundamental levels to insure a solid understanding of the physical limitations each factor places on a practical mechanically cooled germanium detector system. Using this knowledge, mechanically cooled germanium detector prototype systems will be designed and fabricated.

  13. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

    DOE PAGESBeta

    Byrd, Ian; Chen, Hao; Webber, Theron; Li, Jianlin; Wu, Ji

    2015-10-23

    We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g-1 capacity (70%) can be retained at a current density of 600 mA g-1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structure can efficientlymore » accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.« less

  14. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

    SciTech Connect

    Byrd, Ian; Chen, Hao; Webber, Theron; Li, Jianlin; Wu, Ji

    2015-10-23

    We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g-1 capacity (70%) can be retained at a current density of 600 mA g-1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structure can efficiently accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.

  15. Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

    NASA Technical Reports Server (NTRS)

    Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

    1997-01-01

    A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

  16. Replacing tin in lactide polymerization: design of highly active germanium-based catalysts.

    PubMed

    Guo, Jia; Haquette, Pierre; Martin, Juliette; Salim, Karine; Thomas, Christophe M

    2013-12-16

    Most germane: Hexacoordinate germanium(IV) species exhibit unprecedented activities, yet controlled behavior, as initiators for the ring-opening polymerization of rac-lactide to form polylactide polymers.

  17. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    SciTech Connect

    Soni, Himadri R. Jha, Prafulla K.

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  18. Hydrogen Sulfide Inhibits Amyloid Formation

    PubMed Central

    2015-01-01

    Amyloid fibrils are large aggregates of misfolded proteins, which are often associated with various neurodegenerative diseases such as Alzheimer’s, Parkinson’s, Huntington’s, and vascular dementia. The amount of hydrogen sulfide (H2S) is known to be significantly reduced in the brain tissue of people diagnosed with Alzheimer’s disease relative to that of healthy individuals. These findings prompted us to investigate the effects of H2S on the formation of amyloids in vitro using a model fibrillogenic protein hen egg white lysozyme (HEWL). HEWL forms typical β-sheet rich fibrils during the course of 70 min at low pH and high temperatures. The addition of H2S completely inhibits the formation of β-sheet and amyloid fibrils, as revealed by deep UV resonance Raman (DUVRR) spectroscopy and ThT fluorescence. Nonresonance Raman spectroscopy shows that disulfide bonds undergo significant rearrangements in the presence of H2S. Raman bands corresponding to disulfide (RSSR) vibrational modes in the 550–500 cm–1 spectral range decrease in intensity and are accompanied by the appearance of a new 490 cm–1 band assigned to the trisulfide group (RSSSR) based on the comparison with model compounds. The formation of RSSSR was proven further using a reaction with TCEP reduction agent and LC-MS analysis of the products. Intrinsic tryptophan fluorescence study shows a strong denaturation of HEWL containing trisulfide bonds. The presented evidence indicates that H2S causes the formation of trisulfide bridges, which destabilizes HEWL structure, preventing protein fibrillation. As a result, small spherical aggregates of unordered protein form, which exhibit no cytotoxicity by contrast with HEWL fibrils. PMID:25545790

  19. Hydrogen Sulfide and Urogenital Tract.

    PubMed

    di Villa Bianca, Roberta d'Emmanuele; Cirino, Giuseppe; Sorrentino, Raffaella

    2015-01-01

    In this chapter the role played by H2S in the physiopathology of urogenital tract revising animal and human data available in the current relevant literature is discussed. H2S pathway has been demonstrated to be involved in the mechanism underlying penile erection in human and experimental animal. Both cystathionine-β synthase (CBS) and cystathionine-γ lyase (CSE) are expressed in the human corpus cavernosum and exogenous H2S relaxes isolated human corpus cavernosum strips in an endothelium-independent manner. Hydrogen sulfide pathway also accounts for the direct vasodilatory effect operated by testosterone on isolated vessels. Convincing evidence suggests that H2S can influence the cGMP pathway by inhibiting the phosphodiesterase 5 (PDE-5) activity. All these findings taken together suggest an important role for the H2S pathway in human corpus cavernosum homeostasis. However, H2S effect is not confined to human corpus cavernosum but also plays an important role in human bladder. Human bladder expresses mainly CBS and generates in vitro detectable amount of H2S. In addition the bladder relaxant effect of the PDE-5 inhibitor sildenafil involves H2S as mediator. In conclusion the H2S pathway is not only involved in penile erection but also plays a role in bladder homeostasis. In addition the finding that it involved in the mechanism of action of PDE-5 inhibitors strongly suggests that modulation of this pathway can represent a therapeutic target for the treatment of erectile dysfunction and bladder diseases. PMID:26162831

  20. SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

    SciTech Connect

    Reedy, R. C.; Mason, A. R.; Nelson, B. P.; Xu, Y.

    1998-10-16

    In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.

  1. HEROICA: A fast screening facility for the characterization of germanium detectors

    NASA Astrophysics Data System (ADS)

    Andreotti, Erica; Gerda Collaboration

    2013-08-01

    In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

  2. HEROICA: A fast screening facility for the characterization of germanium detectors

    SciTech Connect

    Andreotti, Erica; Collaboration: GERDA Collaboration

    2013-08-08

    In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

  3. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

    SciTech Connect

    Wang, Dong Maekura, Takayuki; Kamezawa, Sho; Yamamoto, Keisuke; Nakashima, Hiroshi

    2015-02-16

    We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified.

  4. Sulfide capacities of fayalite-base slags

    NASA Astrophysics Data System (ADS)

    Simeonov, S. R.; Sridhar, R.; Toguri, J. M.

    1995-04-01

    The sulfide capacities of fayalite-base slags were measured by a gas-slag equilibration technique under controlled oxygen and sulfur potentials similar to those encountered in the pyrometallurgical processing of nonferrous metals. The oxygen pressure range was from 10-9.5 to 10-11 MPa and the sulfur pressure range from 10-3 to 10-4.5 MPa, over a temperature range of 1473 to 1623 K. The slags studied were FeO-SiO2 at silica saturation and those with addition of CaO, MgO, and Al2O3 to determine their effect on sulfide capacities. For these slags, the sulfide capacities were found to vary from 10-3.3 to 10-5. The sulfide capacities increased with increasing temperature from 1473 to 1623 K. A comparison of the reported plant data on sulfur content of industrial slags shows good agreement with the present experimental results. The present data will be useful in estimating metal losses in slag due to metal sulfide entrainment in nonferrous smelters.

  5. Phase Engineering of 2D Tin Sulfides.

    PubMed

    Mutlu, Zafer; Wu, Ryan J; Wickramaratne, Darshana; Shahrezaei, Sina; Liu, Chueh; Temiz, Selcuk; Patalano, Andrew; Ozkan, Mihrimah; Lake, Roger K; Mkhoyan, K A; Ozkan, Cengiz S

    2016-06-01

    Tin sulfides can exist in a variety of phases and polytypes due to the different oxidation states of Sn. A subset of these phases and polytypes take the form of layered 2D structures that give rise to a wide host of electronic and optical properties. Hence, achieving control over the phase, polytype, and thickness of tin sulfides is necessary to utilize this wide range of properties exhibited by the compound. This study reports on phase-selective growth of both hexagonal tin (IV) sulfide SnS2 and orthorhombic tin (II) sulfide SnS crystals with diameters of over tens of microns on SiO2 substrates through atmospheric pressure vapor-phase method in a conventional horizontal quartz tube furnace with SnO2 and S powders as the source materials. Detailed characterization of each phase of tin sulfide crystals is performed using various microscopy and spectroscopy methods, and the results are corroborated by ab initio density functional theory calculations. PMID:27099950

  6. Phase Engineering of 2D Tin Sulfides.

    PubMed

    Mutlu, Zafer; Wu, Ryan J; Wickramaratne, Darshana; Shahrezaei, Sina; Liu, Chueh; Temiz, Selcuk; Patalano, Andrew; Ozkan, Mihrimah; Lake, Roger K; Mkhoyan, K A; Ozkan, Cengiz S

    2016-06-01

    Tin sulfides can exist in a variety of phases and polytypes due to the different oxidation states of Sn. A subset of these phases and polytypes take the form of layered 2D structures that give rise to a wide host of electronic and optical properties. Hence, achieving control over the phase, polytype, and thickness of tin sulfides is necessary to utilize this wide range of properties exhibited by the compound. This study reports on phase-selective growth of both hexagonal tin (IV) sulfide SnS2 and orthorhombic tin (II) sulfide SnS crystals with diameters of over tens of microns on SiO2 substrates through atmospheric pressure vapor-phase method in a conventional horizontal quartz tube furnace with SnO2 and S powders as the source materials. Detailed characterization of each phase of tin sulfide crystals is performed using various microscopy and spectroscopy methods, and the results are corroborated by ab initio density functional theory calculations.

  7. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    NASA Astrophysics Data System (ADS)

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  8. Epitaxial growth of nanostructured gold films on germanium via galvanic displacement.

    PubMed

    Sayed, Sayed Y; Buriak, Jillian M

    2010-12-01

    This work focuses on the synthesis and characterization of gold films grown via galvanic displacement on Ge(111) substrates. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous, room temperature conditions. Investigations involving X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques were performed to study the crystallinity and orientation of the resulting gold-on-germanium films. A profound effect of HF(aq) concentration was noted, and although the SEM images did not show significant differences in the resulting gold films, a host of X-ray diffraction studies demonstrated that higher concentrations of HF(aq) led to epitaxial gold-on-germanium, whereas in the absence of HF(aq), lower degrees of order (fiber texture) resulted. Cross-sectional nanobeam diffraction analyses of the Au-Ge interface confirmed the epitaxial nature of the gold-on-germanium film. This epitaxial behavior can be attributed to the simultaneous etching of the germanium oxides, formed during the galvanic displacement process, in the presence of HF. High-resolution TEM analyses showed the coincident site lattice (CSL) interface of gold-on-germanium, which results in a small 3.8% lattice mismatch due to the coincidence of four gold lattices with three of germanium.

  9. Labile sulfide and sulfite in phytochelatin complexes

    SciTech Connect

    Eannetta, N.T.; Steffens, J.C. )

    1989-04-01

    Heavy metals such as cadmium induce tomato cell cultures to synthesize the metal binding polypeptides ({gamma}-Glu-Cys){sub 3} and ({gamma}-Glu-Cys){sub 4}-Gly (phytochelatins). Tomato cells selected for growth on normally lethal concentrations of CdCl{sub 2} synthesize higher quantities of these polypeptides. Cd{sup r} cells are not cross-resistant to other heavy metals, and recent work suggests that metal detoxification by these peptides may be Cd-specific. The occurrence of labile sulfur as a component of the metal complex raises questions concerning possible functions of phytochelatins besides that of Cd binding. The presence of acid-labile sulfide ion in phytochelatin complexes has been reported by several groups. We report the additional finding that labile sulfite is also present in these complexes and in higher amounts than sulfide. Sulfide and sulfite are both released from the metal binding complex by acidification or by treatment with EDTA.

  10. 40 CFR 425.03 - Sulfide analytical methods and applicability.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... § 425.03 Sulfide analytical methods and applicability. (a) The potassium ferricyanide titration method... ferricyanide titration method for the determination of sulfide in wastewaters discharged by plants operating...

  11. 40 CFR 425.03 - Sulfide analytical methods and applicability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... § 425.03 Sulfide analytical methods and applicability. (a) The potassium ferricyanide titration method... ferricyanide titration method for the determination of sulfide in wastewaters discharged by plants operating...

  12. Preparation of silver-activated zinc sulfide thin films

    NASA Technical Reports Server (NTRS)

    Feldman, C.; Swindells, F. E.

    1968-01-01

    Silver improves luminescence and reduces contamination of zinc sulfide phosphors. The silver is added after the zinc sulfide phosphors are deposited in thin films by vapor evaporation, but before calcining, by immersion in a solution of silver salt.

  13. Mechanisms of hydrogen sulfide removal with steel making slag.

    PubMed

    Kim, Kyunghoi; Asaoka, Satoshi; Yamamoto, Tamiji; Hayakawa, Shinjiro; Takeda, Kazuhiko; Katayama, Misaki; Onoue, Takasumi

    2012-09-18

    In the present study, we experimentally investigated the removal of hydrogen sulfide using steel-making slag (SMS) and clarified the mechanism of hydrogen sulfide removal with the SMS. The results proved that SMS is able to remove hydrogen sulfide dissolved in water, and the maximum removal amount of hydrogen sulfide per unit weight of the SMS for 8 days was estimated to be 37.5 mg S/g. The removal processes of hydrogen sulfide were not only adsorption onto the SMS, but oxidation and precipitation as sulfur. The chemical forms of sulfide adsorbed onto the SMS were estimated to be sulfur and manganese sulfide in the ratio of 81% and 19%, respectively. It is demonstrated here that the SMS is a promising material to remediate organically enriched coastal sediments in terms of removal of hydrogen sulfide. Furthermore, using SMS is expected to contribute to development of a recycling-oriented society.

  14. Sulfide and methane production in sewer sediments.

    PubMed

    Liu, Yiwen; Ni, Bing-Jie; Ganigué, Ramon; Werner, Ursula; Sharma, Keshab R; Yuan, Zhiguo

    2015-03-01

    Recent studies have demonstrated significant sulfide and methane production by sewer biofilms, particularly in rising mains. Sewer sediments in gravity sewers are also biologically active; however, their contribution to biological transformations in sewers is poorly understood at present. In this study, sediments collected from a gravity sewer were cultivated in a laboratory reactor fed with real wastewater for more than one year to obtain intact sediments. Batch test results show significant sulfide production with an average rate of 9.20 ± 0.39 g S/m(2)·d from the sediments, which is significantly higher than the areal rate of sewer biofilms. In contrast, the average methane production rate is 1.56 ± 0.14 g CH4/m(2)·d at 20 °C, which is comparable to the areal rate of sewer biofilms. These results clearly show that the contributions of sewer sediments to sulfide and methane production cannot be ignored when evaluating sewer emissions. Microsensor and pore water measurements of sulfide, sulfate and methane in the sediments, microbial profiling along the depth of the sediments and mathematical modelling reveal that sulfide production takes place near the sediment surface due to the limited penetration of sulfate. In comparison, methane production occurs in a much deeper zone below the surface likely due to the better penetration of soluble organic carbon. Modelling results illustrate the dependency of sulfide and methane productions on the bulk sulfate and soluble organic carbon concentrations can be well described with half-order kinetics.

  15. Classification of polytype structures of zinc sulfide

    SciTech Connect

    Laptev, V.I.

    1994-12-31

    It is suggested that the existing classification of polytype structures of zinc sulfide be supplemented with an additional criterion: the characteristic of regular point systems (Wyckoff positions) including their type, number, and multiplicity. The consideration of the Wyckoff positions allowed the establishment of construction principles of known polytype series of different symmetries and the systematization (for the first time) of the polytypes with the same number of differently packed layers. the classification suggested for polytype structures of zinc sulfide is compact and provides a basis for creating search systems. The classification table obtained can also be used for numerous silicon carbide polytypes. 8 refs., 4 tabs.

  16. Modeling of Sulfide Microenvironments on Mars

    NASA Technical Reports Server (NTRS)

    Schwenzer, S. P.; Bridges, J. C.; McAdam, A.; Steer, E. D.; Conrad, P. G.; Kelley, S. P.; Wiens, R. C.; Mangold, N.; Grotzinger, J.; Eigenbrode, J. L.; Franz, H. B.; Sutter, B.

    2016-01-01

    Yellowknife Bay (YKB; sol 124-198) is the second site that the Mars Science Laboratory Rover Curiosity investigated in detail on its mission in Gale Crater. YKB represents lake bed sediments from an overall neutral pH, low salinity environment, with a mineralogical composition which includes Ca-sulfates, Fe oxide/hydroxides, Fe-sulfides, amorphous material, and trioctahedral phyllosilicates. We investigate whether sulfide alteration could be associated with ancient habitable microenvironments in the Gale mudstones. Some textural evidence for such alteration may be pre-sent in the nodules present in the mudstone.

  17. Acute inhalation toxicity of carbonyl sulfide

    SciTech Connect

    Benson, J.M.; Hahn, F.F.; Barr, E.B.

    1995-12-01

    Carbonyl sulfide (COS), a colorless gas, is a side product of industrial procedures sure as coal hydrogenation and gasification. It is structurally related to and is a metabolite of carbon disulfide. COS is metabolized in the body by carbonic anhydrase to hydrogen sulfide (H{sub 2}S), which is thought to be responsible for COS toxicity. No threshold limit value for COS has been established. Results of these studies indicate COS (with an LC{sub 50} of 590 ppm) is slightly less acutely toxic than H{sub 2}S (LC{sub 50} of 440 ppm).

  18. Aromatic sulfide/sulfone polymer production

    SciTech Connect

    Scoggins, L.E.; Hoover, K.C.; Shang, W.W.

    1991-05-14

    This patent describes a process for the production of aromatic sulfide/sulfone polymer. It comprises: contacting at least one lactam, at least one alkali metal hydrosulfide, water, and at least one base selected from the group consisting of alkali metal hydroxides and mixtures of alkali metal hydroxides with alkali metal carbonates under reaction conditions of time and temperature sufficient to produce a mixture containing a complex which comprises the at least one alkali metal hydrosulfide and contacting the mixture produced with a least one dihaloaromatic sulfone under polymerization conditions for a period of time sufficient to form an aromatic sulfide/sulfone polymer.

  19. Evolution of sulfide mineralization on Mars

    NASA Technical Reports Server (NTRS)

    Burns, Roger G.; Fisher, Duncan S.

    1990-01-01

    It has been previously suggested, on the basis of compositional and petrographic similarities noted between komatites, SNC meteorites, and the silicate portion of the Martian regolith fines, that iron-sulfide ore deposites may exist on Mars. This paper examines the possible locations of Archean-type sulfide and related ore deposits on Mars, their evolution, and the emplacement mechanisms for the ore deposit. The clues to these questions are deduced by applying to Mars the temporal patterns of ore distribution on earth and the experimental observations on sulfur solubility in basaltic melts.

  20. Membrane for hydrogen recovery from streams containing hydrogen sulfide

    DOEpatents

    Agarwal, Pradeep K.

    2007-01-16

    A membrane for hydrogen recovery from streams containing hydrogen sulfide is provided. The membrane comprises a substrate, a hydrogen permeable first membrane layer deposited on the substrate, and a second membrane layer deposited on the first layer. The second layer contains sulfides of transition metals and positioned on the on a feed side of the hydrogen sulfide stream. The present invention also includes a method for the direct decomposition of hydrogen sulfide to hydrogen and sulfur.

  1. Method for inhibiting oxidation of metal sulfide-containing material

    DOEpatents

    Elsetinow, Alicia; Borda, Michael J.; Schoonen, Martin A.; Strongin, Daniel R.

    2006-12-26

    The present invention provides means for inhibiting the oxidation of a metal sulfide-containing material, such as ore mine waste rock or metal sulfide taiulings, by coating the metal sulfide-containing material with an oxidation-inhibiting two-tail lipid coating (12) thereon, thereby inhibiting oxidation of the metal sulfide-containing material in acid mine drainage conditions. The lipids may be selected from phospholipids, sphingolipids, glycolipids and combinations thereof.

  2. Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Sanchez Perez, Jose Roberto

    Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant

  3. Automation of the Characterization of High Purity Germanium Detectors

    NASA Astrophysics Data System (ADS)

    Dugger, Charles ``Chip''

    2014-09-01

    Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of the detectors must be characterized. A robotic arm is being tested for future calibration of HPGe detectors. The arm will hold a source at locations relative to the crystal while data is acquired. Several radioactive sources of varying energy levels will be used to determine the characteristics of the crystal. In this poster, I will present our work with the robot, as well as the characterization of data we took with an underground HPGe detector at the WIPP facility in Carlsbad, NM (2013). Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of

  4. Development of a new type of germanium detector for dark matter searches

    NASA Astrophysics Data System (ADS)

    Wei, Wenzhao

    Monte Carlo simulation is an important tool used to develop a better understanding of important physical processes. This thesis describes three Monte Carlo simulations used to understand germanium detector response to low energy nuclear recoils and radiogenic backgrounds for direct dark matter searches. The first simulation is the verification of Barker-Mei model, a theoretical model for calculating the ionization efficiency for germanium detector for the energy range of 1 - 100 keV. Utilizing the shape analysis, a bin-to-bin comparison between simulation and experimental data was performed for verifying the accuracy of the Barker-Mei model. A percentage difference within 4% was achieved between data and simulation, which showed the validity of the Barker-Mei model. The second simulation is the study of a new type of germanium detector for n/gamma discrimination at 77 K with plasma time difference in pulse shape. Due to the poor time resolution, conventional P-type Point Contact (PPC) and coaxial germanium detectors are not capable of discriminating nuclear recoils from electron recoils. In this thesis, a new idea of using great detector granularity and plasma time difference in pulse shape to discriminate nuclear recoils from electron recoils with planar germanium detectors in strings was discussed. The anticipated sensitivity of this new detector array is shown for detecting dark matter. The last simulation is a study of a new type of germanium-detector array serving as a PMT screening facility for ultra-low background dark matter experiments using noble liquid xenon as detector material such LUX/LZ and XENON100/XENON1T. A well-shaped germanium detector array and a PMT were simulated to study the detector response to the signal and background for a better understanding of the radiogenic gamma rays from PMTs. The detector efficiency and other detector performance were presented in this work.

  5. HEROICA: an underground facility for the fast screening of germanium detectors

    NASA Astrophysics Data System (ADS)

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  6. Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates

    DOEpatents

    Eser, Erten; Fields, Shannon

    2012-05-01

    A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

  7. New Sulfide Derivatives of Vegetable Oils

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Vegetable oils containing sulfide group were synthesized using a UV initiated thiol-ene reaction. The reaction involved addition of butyl thiol to the double bonds of the vegetable oil without the presence of a solvent. The effects of temperature, reaction time, type of vegetable oil, thiol to veg...

  8. 30 CFR 250.490 - Hydrogen sulfide.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... black lettering as follows: Letter height Wording 12 inches Danger. Poisonous Gas. Hydrogen Sulfide. 7... well-control techniques to prevent formation fracturing in an open hole within the pressure limits of... designed consistent with the anticipated depth, conditions of the hole, and reservoir environment to...

  9. 30 CFR 250.490 - Hydrogen sulfide.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... black lettering as follows: Letter height Wording 12 inches Danger. Poisonous Gas. Hydrogen Sulfide. 7... well-control techniques to prevent formation fracturing in an open hole within the pressure limits of... designed consistent with the anticipated depth, conditions of the hole, and reservoir environment to...

  10. Sulfide as a signaling molecule in autophagy

    PubMed Central

    Gotor, Cecilia; García, Irene; Crespo, José L.; Romero, Luis C.

    2013-01-01

    Hydrogen sulfide is already recognized as an important signaling molecule in mammalian systems, and emerging data suggest that H2S is a signaling molecule just as important as nitric oxide (NO) and H2O2 in plants. Although sulfide is generated in chloroplasts and mitochondria, it is present predominantly in the charged HS- form due to the basic pH inside both organelles, thus requiring an active transporter, which is yet to be identified, to be released. In Arabidopsis, we found that the cytosolic L-cysteine desulfhydrase DES1 is involved in the degradation of cysteine, and therefore responsible for the generation of H2S in this cellular compartment. DES1 deficiency leads to the induction of autophagy. Moreover, we have demonstrated that sulfide in particular exerts a general effect on autophagy through negative regulation, in a way unrelated to nutrient deficiency. The mechanisms of H2S action and its molecular targets are largely unknown, although in animal systems, protein S-sulfhydration has been proposed as a mechanism for sulfide-mediated signaling. PMID:23328265

  11. Comparison of Hydrogen Sulfide Analysis Techniques

    ERIC Educational Resources Information Center

    Bethea, Robert M.

    1973-01-01

    A summary and critique of common methods of hydrogen sulfide analysis is presented. Procedures described are: reflectance from silver plates and lead acetate-coated tiles, lead acetate and mercuric chloride paper tapes, sodium nitroprusside and methylene blue wet chemical methods, infrared spectrophotometry, and gas chromatography. (BL)

  12. REACTION PROCESSES OF ARSENIC IN SULFIDIC SOLUTIONS

    EPA Science Inventory

    The fate of arsenic in the environment is fundamentally linked to its speciation. Arsenic in aerobic environments is predominantly arsenate, however under reducing conditions arsenite species dominate. In anoxic or sulfidic environments thioarsenite ((As(OH)x(SH)yz-) species alon...

  13. Monitoring sulfide and sulfate-reducing bacteria

    SciTech Connect

    Tanner, R.S.

    1995-12-31

    Simple yet precise and accurate methods for monitoring sulfate-reducing bacteria (SRB) and sulfide remain useful for the study of bacterial souring and corrosion. Test kits are available to measure sulfide in field samples. A more precise methylene blue sulfide assay for both field and laboratory studies is described here. Improved media, compared to that in API RP-38, for enumeration of SRB have been formulated. One of these, API-RST, contained cysteine (1.1 mM) as a reducing agent, which may be a confounding source of sulfide. While cysteine was required for rapid enumeration of SRB from environmental samples, the concentration of cysteine in medium could be reduced to 0.4 mM. It was also determined that elevated levels of yeast extract (>1 g/liter) could interfere with enumeration of SRB from environmental samples. The API-RST medium was modified to a RST-11 medium. Other changes in medium composition, in addition to reduction of cysteine, included reduction of the concentration of phosphate from 3.4 mM to 2.2 mM, reduction of the concentration of ferrous iron from 0.8 mM to 0.5 mM and preparation of a stock mineral solution to ease medium preparation. SRB from environmental samples could be enumerated in a week in this medium.

  14. Platinum metals in magmatic sulfide ores

    USGS Publications Warehouse

    Naldrett, A.J.; Duke, J.M.

    1980-01-01

    Platinum-group elements (PGE) are mined predominantly from deposits that have formed by the segregation of molten iron-nickel-copper sulfides from silicate magmas. The absolute concentrations of PGE in sulfides from different deposits vary over a range of five orders of magnitude, whereas those of other chalcophile elements vary by factors of only 2 to 100. However, the relative proportions of the different PGE in a given deposit are systematically related to the nature of the parent magma. The absolute and relative concentrations of PGE in magmatic sulfides are explained in terms of the degree of partial melting of mantle peridotite required to produce the parent magma and the processes of batch equilibration and fractional segregation of sulfides. The Republic of South Africa and the U.S.S.R. together possess more than 97 percent of the world PGE reserves, but significant undeveloped resources occur in North America. The Stillwater complex in Montana is perhaps the most important example. Copyright ?? 1980 AAAS.

  15. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  16. Radium needle used to calibrate germanium gamma-ray detector.

    PubMed

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  17. Synthesis of germanium nanocrystals in high temperature supercritical CO(2).

    PubMed

    Lu, Xianmao; Korgel, Brian A; Johnston, Keith P

    2005-07-01

    Germanium nanocrystals were synthesized in supercritical (sc) CO(2) by thermolysis of diphenylgermane (DPG) or tetraethylgermane (TEG) with octanol as a capping ligand at 500 °C and 27.6 MPa. The Ge nanocrystals were characterized with high resolution transmission electron microscopy (HRTEM), energy-dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD). On the basis of TEM, the mean diameters of the nanocrystals made from DPG and TEG were 10.1 and 5.6 nm, respectively. The synthesis in sc-CO(2) produced much less organic contamination compared with similar reactions in organic supercritical fluids. When the same reaction of DPG with octanol was performed in the gas phase without CO(2) present, bulk Ge crystals were formed instead of nanocrystals. Thus, the solvation of the hydrocarbon ligands by CO(2) was sufficient to provide steric stabilization. The presence of steric stabilization in CO(2) at a reduced temperature of 2.5, with a reduced solvent density of only 0.4, may be attributed to a reduction in the differences between ligand-ligand interactions and ligand-CO(2) interactions relative to thermal energy.

  18. Proton-induced radiation damage in germanium detectors

    SciTech Connect

    Bruckner, J.; Korfer, M.; Wanke, H. , Mainz ); Schroeder, A.N.F. ); Figes, D.; Dragovitsch, P. ); Englert, P.A.J. ); Starr, R.; Trombka, J.I. . Goddard Space Flight Center); Taylor, I. ); Drake, D.M.; Shunk, E.R. )

    1991-04-01

    High-purity germanium (HPGe) detectors will be used in future space missions for gamma-ray measurements and will be subject to interactions with energetic particles. To simulate this process several large-volume n-type HPGe detectors were incrementally exposed to a particle fluence of up to 10{sub 8} protons cm{sup {minus}2} (proton energy: 1.5 GeV) at different operating temperatures (90 to 120 K) to induce radiation damage. Basic scientific as well as engineering data on detector performance were collected. During the incremental irradiation, the peak shape produced by the detectors showed a significant change from a Gaussian shape to a broad complex structure. After the irradiation all detectors were thoroughly characterized by measuring many parameters. To remove the accumulated radiation damage the detectors were stepwise annealed at temperatures T {le} 110{degrees}C while staying specially designed cryostats. This paper shows that n-type HPGe detectors can be used in charged particles environments as high-energy resolution devices until a certain level of radiation damage is accumulated and that the damage can be removed at moderate annealing temperatures and the detector returned to operating condition.

  19. Germanium Detector Crystal Axis Orientation for the MAJORANA Demonstrator

    NASA Astrophysics Data System (ADS)

    Letourneau, Hannah

    2013-10-01

    The MAJORANA Demonstrator, currently being constructed at Sanford Underground Research Facility in Lead, South Dakota, is an array of germanium detectors which will be used to search for neutrinoless double beta decay, which would demonstrate that neutrinos have a Majorana mass term and lepton number is not conserved. An important characteristic of semiconductor detectors is the crystal axis orientation, because the propagation of electromagnetic signals is attenuated by the location of the interaction relative to the axis of the crystal. Conventionally, a goniometer is used to position a collimated low energy gamma source in many small increments around the detector to measure the rise time at each position. However, due to physical constraints from the casing of the Demonstrator, a different method must be developed. At the University of Washington this summer, I worked with a 76 Ge point-contact detector. I found the crystal axis orientation first with Americium 241, a lower energy gamma source. Then, I used a higher energy source, Thorium 232, in conjunction with the only a few angular reference points to also calculate rise time. Also, I wrote code to process the data. The success of this method will be evaluated and discussed. NSF

  20. Photothermal ionization spectroscopy of donors in high-purity germanium

    SciTech Connect

    Darken, L.S.

    1989-02-01

    The results of narrow linewidth (0.10 cm/sup -1/ FWHM) photothermal ionization spectroscopy (PTIS) investigations of shallow donors in high-purity germanium are reported. The donors observed include phosphorus, arsenic, lithium, a hydrogen-oxygen complex, and three lithium-related complexes. One lithium-related complex designated D(Li,Y) is reported here for the first time. Within experimental accuracy, energies of the excited states with respect to the conduction band are the same for all donors. Fourteen different 1S..-->..excited state transitions (five previously unreported, two others seen for the first time in PTIS from the ground state) have been observed. The Zeeman effect was used to help identify these levels. PTIS lines from the ground state to 2P/sub 0/ and 3P/sub 0/ were found to be relatively weak but their intensity was in good agreement with the intensity calculated by means of the Cascade theory. In as-grown samples, linewidth broadening of group V donors was observed that depended on the square root of the dislocation density (etch pit density) and with features expected from deformation potential theory.

  1. Etching of germanium-tin using ammonia peroxide mixture

    SciTech Connect

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia; Zhang, Zheng; Pan, Jisheng; Tok, Eng-Soon

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  2. Isotopic germanium targets for high beam current applications at GAMMASPHERE.

    SciTech Connect

    Greene, J. P.; Lauritsen, T.

    2000-11-29

    The creation of a specific heavy ion residue via heavy ion fusion can usually be achieved through a number of beam and target combinations. Sometimes it is necessary to choose combinations with rare beams and/or difficult targets in order to achieve the physics goals of an experiment. A case in point was a recent experiment to produce {sup 152}Dy at very high spins and low excitation energy with detection of the residue in a recoil mass analyzer. Both to create the nucleus cold and with a small recoil-cone so that the efficiency of the mass analyzer would be high, it was necessary to use the {sup 80}Se on {sup 76}Ge reaction rather than the standard {sup 48}Ca on {sup 108}Pd reaction. Because the recoil velocity of the {sup 152}Dy residues was very high using this symmetric reaction (5% v/c), it was furthermore necessary to use a stack of two thin targets to reduce the Doppler broadening. Germanium targets are fragile and do not withstand high beam currents, therefore the {sup 76}Ge target stacks were mounted on a rotating target wheel. A description of the {sup 76}Ge target stack preparation will be presented and the target performance described.

  3. Measurement of Compton scattering in phantoms by germanium detectors

    SciTech Connect

    Zasadny, K.R.; Koral, K.F. . Medical Center); Floyd, C.E. Jr.; Jaszczak, R.J. . Dept. of Radiology)

    1990-04-01

    Quantitative Anger-camera tomography requires correction for Compton scattering. The Anger camera spectral-fitting technique can measure scatter fractions at designated positions in an image allowing for correction. To permit verification of those measurements for {sup 131}I, the authors have determined scatter fractions with a high-purity germanium (HPGe) detector and various phantom configurations. The scatter fraction values for {sup 99m}Tc were also measured and are compared to results from Monte Carlo simulation. The phantom consisted of a 22.2 cm diameter {times} 18.6 cm high cylinder filled with water and a 6 cm diameter water-filled sphere placed at various locations inside the cylinder. Radioisotope is added to either the sphere or the cylinder. The source is collimated by an Anger camera collimator and the active area of the HPGe detector is defined by a 0.6 cm diameter hole in a lead shielding mask. Corrections include accounting for the HPGe detector efficiency as a function of gamma-ray energy, the finite energy resolution of detector and the HPGe detector energy resolution compared to that for a NaI(Tl) Anger camera.

  4. Point defect states in Sb-doped germanium

    SciTech Connect

    Patel, Neil S. Monmeyran, Corentin; Agarwal, Anuradha; Kimerling, Lionel C.

    2015-10-21

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

  5. Size-dependent color tuning of efficiently luminescent germanium nanoparticles.

    PubMed

    Shirahata, Naoto; Hirakawa, Daigo; Masuda, Yoshitake; Sakka, Yoshio

    2013-06-18

    It is revealed that rigorous control of the size and surface of germanium nanoparticles allows fine color tuning of efficient fluorescence emission in the visible region. The spectral line widths of each emission were very narrow (<500 meV). Furthermore, the absolute fluorescence quantum yields of each emission were estimated to be 4-15%, which are high enough to be used as fluorescent labeling tags. In this study, a violet-light-emitting nanoparticle is demonstrated to be a new family of luminescent Ge. Such superior properties of fluorescence were observed from the fractions separated from one mother Ge nanoparticle sample by the fluorescent color using our developed combinatorial column technique. It is commonly believed that a broad spectral line width frequently observed from Ge nanoparticle appears because of an indirect band gap nature inherited even in nanostructures, but the present study argues that such a broad luminescence spectrum is expressed as an ensemble of different spectral lines and can be separated into the fractions emitting light in each wavelength region by the appropriate postsynthesis process.

  6. Stability and exfoliation of germanane: a germanium graphane analogue.

    PubMed

    Bianco, Elisabeth; Butler, Sheneve; Jiang, Shishi; Restrepo, Oscar D; Windl, Wolfgang; Goldberger, Joshua E

    2013-05-28

    Graphene's success has shown not only that it is possible to create stable, single-atom-thick sheets from a crystalline solid but that these materials have fundamentally different properties than the parent material. We have synthesized for the first time, millimeter-scale crystals of a hydrogen-terminated germanium multilayered graphane analogue (germanane, GeH) from the topochemical deintercalation of CaGe2. This layered van der Waals solid is analogous to multilayered graphane (CH). The surface layer of GeH only slowly oxidizes in air over the span of 5 months, while the underlying layers are resilient to oxidation based on X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements. The GeH is thermally stable up to 75 °C; however, above this temperature amorphization and dehydrogenation begin to occur. These sheets can be mechanically exfoliated as single and few layers onto SiO2/Si surfaces. This material represents a new class of covalently terminated graphane analogues and has great potential for a wide range of optoelectronic and sensing applications, especially since theory predicts a direct band gap of 1.53 eV and an electron mobility ca. five times higher than that of bulk Ge.

  7. Defect Density Characterization of Detached-Grown Germanium Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Cobb, S. D.; Volz, M. P.; Szoke, J.; Szofran, F. R.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Several (111)-oriented, Ga-doped germanium crystals were grown in pyrolytic boron nitride (pBN) containers by the Bridgman and the detached Bridgman growth techniques. Growth experiments in closed-bottom pBN containers resulted in nearly completely detached-grown crystals, because the gas pressure below the melt can build up to a higher pressure than above the melt. With open-bottom tubes the gas pressure above and below the melt is balanced during the experiment, and thus no additional force supports the detachment. In this case the crystals grew attached to the wall. Etch pit density (EPD) measurements along the axial growth direction indicated a strong improvement of the crystal quality of the detached-grown samples compared to the attached samples. Starting in the seed with an EPD of 6-8 x 10(exp 3)/square cm it decreased in the detached-grown crystals continuously to about 200-500/square cm . No significant radial difference between the EPD on the edge and the middle of the crystal exists. In the attached grown samples the EPD increases up to a value of about 2-4 x 10(exp 4)/square cm (near the edge) and up to 1 x 10(exp 4)/square cm in the middle of the sample. Thus the difference between the detached- and the attached-grown crystals with respect to the EPD is approximately two orders of magnitude.

  8. Spin Qubits in Germanium Structures with Phononic Gap

    NASA Technical Reports Server (NTRS)

    Smelyanskiy, V. N.; Vasko, F. T.; Hafiychuk, V. V.; Dykman, M. I.; Petukhov, A. G.

    2014-01-01

    We propose qubits based on shallow donor electron spins in germanium structures with phononic gap. We consider a phononic crystal formed by periodic holes in Ge plate or a rigid cover / Ge layer / rigid substrate structure with gaps approximately a few GHz. The spin relaxation is suppressed dramatically, if the Zeeman frequency omegaZ is in the phononic gap, but an effective coupling between the spins of remote donors via exchange of virtual phonons remains essential. If omegaZ approaches to a gap edge in these structures, a long-range (limited by detuning of omegaZ) resonant exchange interaction takes place. We estimate that ratio of the exchange integral to the longitudinal relaxation rate exceeds 10(exp 5) and lateral scale of resonant exchange 0.1 mm. The exchange contribution can be verified under microwave pumping through oscillations of spin echo signal or through the differential absorption measurements. Efficient manipulation of spins due to the Rabi oscillations opens a new way for quantum information applications.

  9. X-ray Characterization of Detached-Grown Germanium Crystals

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Cobb, S. D.; Szofran, F. R.

    2005-01-01

    Germanium (111)-oriented crystals have been grown by the vertical Bridgman technique, in both detached and attached configurations. Microstructural characterization of these crystals has been performed using synchrotron white beam x-ray topography (SWBXT) and double axis x-ray diffraction. Dislocation densities were measured from x-ray topographs obtained using the reflection geometry. For detached-grown crystals, the dislocation density is 4-6 x 10(exp 4) per square centimeter in the seed region, and decreases in the direction of growth to less than 10(exp 3) per square centimeter, and in some crystals reaches less than 10(exp 2) per square centimeter. For crystals grown in the attached configuration, dislocation densities were on the order of 10(exp 4) per square centimeter in the middle of the crystals, increasing to greater than 10(exp 5) per square centimeter near the edge. The measured dislocation densities are in excellent agreement with etch pit density results. The rocking curve linewidths were relatively insensitive to the dislocation densities. However, broadening and splitting of the rocking curves were observed in the vicinity of subgrain boundaries identified by x-ray topography in some of the attached-grown crystals.

  10. Strip interpolation in silicon and germanium strip detectors.

    SciTech Connect

    Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

    2004-01-01

    The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM.

  11. Development of a Germanium Small-Animal SPECT System

    PubMed Central

    Johnson, Lindsay C.; Ovchinnikov, Oleg; Shokouhi, Sepideh; Peterson, Todd E.

    2015-01-01

    Advances in fabrication techniques, electronics, and mechanical cooling systems have given rise to germanium detectors suitable for biomedical imaging. We are developing a small-animal SPECT system that uses a double-sided Ge strip detector. The detector’s excellent energy resolution may help to reduce scatter and simplify processing of multi-isotope imaging, while its ability to measure depth of interaction has the potential to mitigate parallax error in pinhole imaging. The detector’s energy resolution is <1% FWHM at 140 keV and its spatial resolution is approximately 1.5 mm FWHM. The prototype system described has a single-pinhole collimator with a 1-mm diameter and a 70-degree opening angle with a focal length variable between 4.5 and 9 cm. Phantom images from the gantry-mounted system are presented, including the NEMA NU-2008 phantom and a hot-rod phantom. Additionally, the benefit of energy resolution is demonstrated by imaging a dual-isotope phantom with 99mTc and 123I without cross-talk correction. PMID:26755832

  12. Bending-induced Symmetry Breaking of Lithiation in Germanium Nanowires

    SciTech Connect

    Gu, Meng; Yang, Hui; Perea, Daniel E.; Zhang, Jiguang; Zhang, Sulin; Wang, Chong M.

    2014-08-01

    From signal transduction of living cells to oxidation and corrosion of metals, mechanical stress intimately couples with chemical reactions, regulating these biological and physiochemical processes. The coupled effect is particularly evident in electrochemical lithiation/delithiation cycling of high-capacity electrodes, such as silicon (Si), where on one hand lithiation-generated stress mediates lithiation kinetics, and on the other electrochemical reaction rate regulates stress generation and mechanical failure of the electrodes. Here we report for the first time the evidence on the controlled lithiation in germanium nanowires (GeNWs) through external bending. Contrary to the symmetric core-shell lithiation in free-standing GeNWs, we show bending GeNWs breaks the lithiation symmetry, speeding up lithaition at the tensile side while slowing down at the compressive side of the GeNWs. The bending-induced symmetry breaking of lithiation in GeNWs is further corroborated by chemomechanical modeling. In the light of the coupled effect between lithiation kinetics and mechanical stress in the electrochemical cycling, our findings shed light on strain/stress engineering of durable high-rate electrodes and energy harvesting through mechanical motion.

  13. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    NASA Astrophysics Data System (ADS)

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  14. Oxygen Demand of Fresh and Stored Sulfide Solutions and Sulfide-Rich Constructed Wetland Effluent.

    PubMed

    Chan, Carolyn; Farahbakhsh, Khosrow

    2015-08-01

    This study investigated the contribution of hydrogen sulfide to biological oxygen demand (BOD5) and chemical oxygen demand (COD) in wastewater effluents, and documented the effect of storage times and conditions on the BOD5 and COD of pH-adjusted sodium sulfide solutions as well as graywater wetland effluent. Initial COD measurements of sulfide solutions were 84-89% of the theoretical oxygen demand (ThOD), 1.996 mg O2/mg S, whereas unseeded BOD5 measurements were 55-77%. For sulfide solutions, all storage conditions led to declines of >15% (COD, BOD5), and >31% (sulfide). For wetland effluent, storage without headspace was effective in reducing COD losses (3.7%), compared to storage with headspace (17%), and affected changes in turbidity, UVA-254 and pH. The results suggest that storage times and conditions should be controlled and reported when reporting BOD5 and COD of sulfide-rich samples. Wetland models representing sulfate reduction as a method of COD removal may need to be reconsidered. PMID:26237688

  15. Sulfide-oxidizing bacteria: Their role during air-stripping

    SciTech Connect

    Dell`Orco, M.J.; Chadik, P.A.; Bitton, G.; Neumann, R.P.

    1998-10-01

    Air-stripping, used to remove hydrogen sulfide naturally present in many groundwater supplies, commonly causes sulfide-oxidizing bacteria to proliferate. The role of sulfide-oxidizing bacteria during air-stripping was investigated in a diffused-air pilot reactor modeled after an existing treatment facility. Visible bacterial filaments and biofilm developed within a few days and increased both the sulfide removed from and turbidity in the effluent. Total sulfide, dissolved oxygen, pH, and electrode potential were monitored at eight locations in the reactor to characterize the process.

  16. Analog Experiments on Sulfide Foams in Magmatic Ore Deposits

    NASA Astrophysics Data System (ADS)

    Leitch, A. M.; Dahn, D.; Zavala, K.

    2009-05-01

    Metal sulfides form as an immiscible phase from silicate magmas. Dynamic mingling and unmingling of the two phases is important for the development of economic deposits: mingling promotes enrichment of the sulfide in valuable metals, and subsequent unmingling generates massive sulfide. Analog experiments were carried out to investigate mingling processes in immiscible systems, using oil, water and small beads to represent magma, sulfide liquid and silicate crystals. Stirring or injection led to the formation of a foam of analog sulfide droplets within an analog silicate framework. We propose that the partial collapse of such a foam explains massive sulfide lenses at the Voisey's Bay magmatic sulfide deposit, and that crystallization of silicate crystals in the remaining foam walls generates 'net-textured' ores. In the experiments, solid particles had a profound effect on unmingling: analog sulfide droplets were stably contained within analog crystal-rich magma and did not coalesce. We therefore suggest that 'net' and 'leopard' textures in disseminated sulfides indicate mingling of sulfide with crystal-poor magma, whereas isolated disseminated patches of sulfide indicate mingling with a crystal-rich magma.

  17. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L.)

    PubMed Central

    Talukdar, Partha; Douglas, Alex; Price, Adam H.; Norton, Gareth J.

    2015-01-01

    Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population) and a genome wide association (GWA) study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL) for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP) was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity). However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed. PMID:26356220

  18. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L.).

    PubMed

    Talukdar, Partha; Douglas, Alex; Price, Adam H; Norton, Gareth J

    2015-01-01

    Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population) and a genome wide association (GWA) study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL) for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP) was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity). However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  19. Electrodeposition of germanium at elevated temperatures and pressures from ionic liquids.

    PubMed

    Wu, Minxian; Vanhoutte, Gijs; Brooks, Neil R; Binnemans, Koen; Fransaer, Jan

    2015-05-14

    The electrodeposition of germanium at elevated temperatures up to 180 °C and pressures was studied from the ionic liquids 1-butyl-1-methylpyrrolidinium dicyanamide and 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide containing [GeCl4(BuIm)2] (where BuIm = 1-butylimidazole) or GeCl4. Cyclic voltammetry (CV), electrochemical quartz crystal microbalance (EQCM), rotating ring-disk electrode (RRDE), scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), electron backscatter diffraction (EBSD) and Auger electron spectroscopy (AES) were used to investigate the electrochemical behavior and the properties of the electrodeposited germanium. Electrodeposition at elevated temperatures leads to higher deposition rates due to: (1) increase in the diffusion rate of the electroactive germanium compounds; (2) faster electrochemical kinetics in the electrolyte; and (3) higher electrical conductivity of the electrodeposited germanium film. Moreover, the morphology of the germanium film is also of a better quality at higher electrodeposition temperatures due to an increase in adatom mobility.

  20. Germanium anode with excellent lithium storage performance in a germanium/lithium-cobalt oxide lithium-ion battery.

    PubMed

    Li, Xiuwan; Yang, Zhibo; Fu, Yujun; Qiao, Li; Li, Dan; Yue, Hongwei; He, Deyan

    2015-02-24

    Germanium is a highly promising anode material for lithium-ion batteries as a consequence of its large theoretical specific capacity, good electrical conductivity, and fast lithium ion diffusivity. In this work, Co3O4 nanowire array fabricated on nickel foam was designed as a nanostructured current collector for Ge anode. By limiting the voltage cutoff window in an appropriate range, the obtained Ge anode exhibits excellent lithium storage performance in half- and full-cells, which can be mainly attributed to the designed nanostructured current collector with good conductivity, enough buffering space for the volume change, and shortened ionic transport length. More importantly, the assembled Ge/LiCoO2 full-cell shows a high energy density of 475 Wh/kg and a high power density of 6587 W/kg. A high capacity of 1184 mA h g(-1) for Ge anode was maintained at a current density of 5000 mA g(-1) after 150 cycles.

  1. Competition for Dimethyl Sulfide and Hydrogen Sulfide by Methylophaga sulfidovorans and Thiobacillus thioparus T5 in Continuous Cultures

    PubMed Central

    De Zwart, J.; Sluis, J.; Kuenen, J. G.

    1997-01-01

    Pure and mixed cultures of Methylophaga sulfidovorans and Thiobacillus thioparus T5 were grown in continuous cultures on either dimethyl sulfide, dimethyl sulfide and H(inf2)S, or H(inf2)S and methanol. In pure cultures, M. sulfidovorans showed a lower affinity for sulfide than T. thioparus T5. Mixed cultures, grown on dimethyl sulfide, showed coexistence of both species. M. sulfidovorans fully converted dimethyl sulfide to thiosulfate, which was subsequently further oxidized to sulfate by T. thioparus T5. Mixed cultures supplied with sulfide and methanol showed that nearly all the sulfide was used by T. thioparus T5, as expected on the basis of the affinities for sulfide. The sulfide in mixed cultures supplied with dimethyl sulfide and H(inf2)S, however, was used by both bacteria. This result may be explained by the fact that the H(inf2)S-oxidizing capacity of M. sulfidovorans remains fully induced by intracellular H(inf2)S originating from dimethyl sulfide metabolism. PMID:16535680

  2. 25 Gbps silicon photonics multi-mode fiber link with highly alignment tolerant vertically illuminated germanium photodiode

    NASA Astrophysics Data System (ADS)

    Okumura, Tadashi; Wakayama, Yuki; Matsuoka, Yasunobu; Oda, Katsuya; Sagawa, Misuzu; Takemoto, Takashi; Nomoto, Etsuko; Arimoto, Hideo; Tanaka, Shigehisa

    2015-02-01

    For a multi mode fiber optical link, a high speed silicon photonics receiver based on a highly alignment tolerant vertically illuminated germanium photodiode was developed. The germanium photodiode has 20 GHz bandwidth and responsivity of 0.5 A/W with highly alignment tolerance for passive optical assembly. The receiver achieves 25 Gbps error free operation after 100 m multi mode fiber transmission.

  3. Selective chemical dissolution of sulfides: An evaluation of six methods applicable to assaying sulfide-bound nickel

    USGS Publications Warehouse

    Klock, P.R.; Czamanske, G.K.; Foose, M.; Pesek, J.

    1986-01-01

    Six analytical techniques for the selective chemical dissolution of sulfides are compared with the purpose of defining the best method for accurately determining the concentration of sulfide-bound nickel. Synthesized sulfide phases of known elemental content, mixed with well-analyzed silicates, were used to determine the relative and absolute efficiency, based on Ni and Mg recovery, of the techniques. Tested leach-methods purported to dissolve sulfide from silicate phases include: brominated water, brominated water-carbon tetrachloride, nitric-hydrochloric acid, hydrogen peroxide-ammonium citrate, bromine-methanol and hydrogen peroxide-ascorbic acid. Only the hydrogen peroxide-ammonium citrate method did not prove adequate in dissolving the sulfide phases. The remaining five methods dissolved the sulfide phases, but the indicated amount of attack on the silicate portion ranged from 3% to 100%. The bromine-methanol method is recommended for assaying sulfide-Ni deposits when Ni is also present in silicate phases. ?? 1986.

  4. Arsenic speciation in natural sulfidic geothermal waters

    NASA Astrophysics Data System (ADS)

    Keller, Nicole S.; Stefánsson, Andri; Sigfússon, Bergur

    2014-10-01

    The speciation of arsenic in natural sulfidic geothermal waters was studied using chemical analyses and thermodynamic aqueous speciation calculations. Samples were collected in three geothermal systems in Iceland, having contrasting H2S concentrations in the reservoir (high vs. low). The sampled waters contained 7-116 ppb As and <0.01-77.6 ppm H2S with pH of 8.56-9.60. The analytical setup used for the determination of arsenic species (Ion Chromatography-Hydride Generation Atomic Fluorescence Spectrometry, IC-HG-AFS) was field-deployed and the samples analyzed within ∼5 min of sampling in order to prevent changes upon storage, which were shown to be considerable regardless of the sample storage method used. Nine aqueous arsenic species were detected, among others arsenite (HnAsO3n-3), thioarsenite (HnAsS3n-3), arsenate (HnAsO4n-3), monothioarsenate (HnAsSO3n-3), dithioarsenate (HnAsS2O2n-3), trithioarsenate (HnAsS3O) and tetrathioarsenate (HnAsS4n-3). The results of the measured aqueous arsenic speciation in the natural geothermal waters and comparison with thermodynamic calculations reveal that the predominant factors determining the species distribution are sulfide concentration and pH. In alkaline waters with low sulfide concentrations the predominant species are AsIII oxyanions. This can be seen in samples from a liquid-only well, tapping water that is H2S-poor and free of oxygen. At intermediate sulfide concentration AsIII and AsV thio species become important and predominate at high sulfide concentration, as seen in two-phase well waters, which have high H2S concentrations in the reservoir. Upon oxidation, for instance due to mixing of the reservoir fluid with oxygenated water upon ascent to the surface, AsV oxyanions form, as well as AsV thio complexes if the sulfide concentration is intermediate to high. This oxidation process can be seen in samples from hot springs in the Geysir geothermal area. While the thermodynamic modeling allows for a first

  5. Multiphysical simulation analysis of the dislocation structure in germanium single crystals

    NASA Astrophysics Data System (ADS)

    Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

    2016-09-01

    To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

  6. Syntheses and spectroscopy of germanium and tin compounds with biorelevant ligands

    NASA Astrophysics Data System (ADS)

    Breitinger, D. K.; Grützner, T.; Wick, H.; Schimmer, O.; Eschelbach, H.

    1997-06-01

    The germanium and tin compounds diaquabis(glycolato)germanium(IV) Ge(OCH 2COO) 2(H 2O) 2 ( 1), bis(thioglycolato)-, bis(thiolactato)-, and bis(thiohydracrylato)-germanium(IV) Ge(SJCOO) 2 (J = CH 2 ( 2), CH(CH 3) ( 3), CH 2CH 2 ( 4)), as well as the tetrakis(alkylthioglycolato)tetrels Tt(SCH 2COOR) 4 (Tt = Ge ( 5, 6) and Sn ( 7, 8); R = Me, i-Pr, respectively), under study for their antimutagenic properties, were studied by vibrational spectrometry. Some of the skeletal vibrations of the octahedral 1 and otherwise tetrahedral compounds were assigned. Data from 1H- and 13C- NMR spectra and from mass spectra are also reported.

  7. σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes

    PubMed Central

    Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph

    2014-01-01

    In order to evaluate the influence of germanium atoms in oligo- and polysilanes, a number of oligosilane compounds were prepared where two or more silicon atoms were replaced by germanium. While it can be expected that the structural features of thus altered molecules do not change much, the more interesting question is, whether this modification would have a profound influence on the electronic structure, in particular on the property of σ-bond electron delocalization. The UV-spectroscopic comparison of the oligosilanes with germanium enriched oligosilanes and also with oligogermanes showed a remarkable uniform picture. The expected bathochromic shift for oligogermanes and Ge-enriched oligosilanes was observed but its extent was very small. For the low energy absorption band the bathochromic shift from a hexasilane chain (256 nm) to a hexagermane chain with identical substituent patterns (259 nm) amounts to a mere 3 nm. PMID:25431502

  8. Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

    SciTech Connect

    Holman, Zachary C.; Liu, Chin-Yi; Kortshagen, Uwe R.

    2010-07-09

    Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

  9. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    SciTech Connect

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  10. Chromatographic separation of germanium and arsenic for the production of high purity (77)As.

    PubMed

    Gott, Matthew D; DeGraffenreid, Anthony J; Feng, Yutian; Phipps, Michael D; Wycoff, Donald E; Embree, Mary F; Cutler, Cathy S; Ketring, Alan R; Jurisson, Silvia S

    2016-04-01

    A simple column chromatographic method was developed to isolate (77)As (94±6% (EtOH/HCl); 74±11 (MeOH)) from germanium for potential use in radioimmunotherapy. The separation of arsenic from germanium was based on their relative affinities for different chromatographic materials in aqueous and organic environments. Using an organic or mixed mobile phase, germanium was selectively retained on a silica gel column as germanate, while arsenic was eluted from the column as arsenate. Subsequently, enriched (76)Ge (98±2) was recovered for reuse by elution with aqueous solution (neutral to basic). Greater than 98% radiolabeling yield of a (77)As-trithiol was observed from methanol separated [(77)As]arsenate [17].

  11. Operando X-ray scattering and spectroscopic analysis of germanium nanowire anodes in lithium ion batteries.

    PubMed

    Silberstein, Katharine E; Lowe, Michael A; Richards, Benjamin; Gao, Jie; Hanrath, Tobias; Abruña, Héctor D

    2015-02-17

    X-ray diffraction (XRD) and Fourier transform extended X-ray absorption fine structure (EXAFS) analysis of X-ray absorption spectroscopy (XAS) measurements have been employed to determine structural and bonding changes, as a function of the lithium content/state of charge, of germanium nanowires used as the active anode material within lithium ion batteries (LIBs). Our data, collected throughout the course of battery cycling (operando), indicate that lithium incorporation within the nanostructured germanium occurs heterogeneously, preferentially into amorphous regions over crystalline domains. Maintenance of the molecular structural integrity within the germanium nanowire is dependent on the depth of discharge. Discharging to a shallower cutoff voltage preserves partial crystallinity for several cycles.

  12. Elasticity, anelasticity, and microplasticity of directionally crystallized aluminum-germanium alloys

    NASA Astrophysics Data System (ADS)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.; Fedorov, V. Yu.

    2014-07-01

    The structure, Young's modulus defect, and internal friction in aluminum-germanium alloys have been studied under conditions of longitudinal elastic vibrations with a strain amplitude in the range of 10-6-3 × 10-4 at frequencies about 100 kHz. The ribbon-shaped samples of the alloys with the germanium content from 35 to 64 wt % have been produced by drawing from the melt by the Stepanov method at a rate of 0.1 mm/s. It has been shown that the dependences of the Young's modulus defect, logarithmic decrement, and vibration stress amplitude on the germanium content in the alloy at a constant strain amplitude have an extremum at 53 wt % Ge. This composition corresponds to the eutectic composition. The dependences of the Young's modulus defect, the decrement, and vibration stress amplitude at a constant microstrain amplitude have been explained by the vibrational displacements of dislocations, which depend on the alloy structure.

  13. Cloud point preconcentration of germanium and determination by hydride generation atomic absorption spectrometry

    NASA Astrophysics Data System (ADS)

    Böyükbayram, A. Elif; Volkan, Mürvet

    2000-07-01

    Cloud point methodology has been successfully employed for the preconcentration of germanium at trace levels from aqueous samples prior to hydride generation flame atomic absorption spectrometry (HGAAS). Germanium was taken into complex with quercetin in aqueous non-ionic surfactant (Triton X-114) medium and concentrated in the surfactant rich phase by bringing the solution to the cloud point temperature (19°C). The preconcentration of only 50 ml of solution with 0.1% Triton X-114 and 2×10 -5 M quercetin at pH 6.4 gives a preconcentration factor of 200. Under these conditions, the detection limit (3 s) and the sensitivity of the cloud-point extraction-HGAAS system were 0.59 and 0.0620 μg l -1, respectively. The extraction efficiency was investigated at low germanium concentrations (10-30 μg l -1) and satisfactory recoveries (93-105%) were obtained.

  14. Micro grooving on single-crystal germanium for infrared Fresnel lenses

    NASA Astrophysics Data System (ADS)

    Yan, Jiwang; Maekawa, Kouki; Tamaki, Jun'ichi; Kuriyagawa, Tsunemoto

    2005-10-01

    Single-crystal germanium is an excellent optical material in the infrared wavelength range. The development of germanium Fresnel lenses not only improves the optical imaging quality but also enables the miniaturization of optical systems. In the present work, we developed a ductile-mode micro grooving process for fabricating Fresnel lenses on germanium. We used a sharply pointed diamond tool to generate the micro Fresnel structures under three-axis ultraprecision numerical control. By adopting a small angle between the cutting edge and the tangent of the objective surface, this method enables the uniform thinning of the undeformed chip thickness to the nanometric range, and thus provides complete ductile regime machining of brittle materials. Under the present conditions, a Fresnel lens which has a form error of 0.5 µm and surface roughness of 20-50 nm Ry (peak-to-valley) was fabricated successfully during a single tool pass.

  15. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    NASA Astrophysics Data System (ADS)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  16. Germanium as a Material to Enable Silicon Photonics

    NASA Astrophysics Data System (ADS)

    Ichikawa, R.; Takita, S.; Ishikawa, Y.; Wada, K.

    Germanium has been an enabler of the information age. Ge on Si nucleates Si photonics as well as high-speed CMOS electronics. Recently, Ge has played a significant role in integrating materials such as III-Vs on Si. The structure of GaAs on a thick Ge layer on Si has been studied for many years to expand its device application menu such as lasers, high-performance transistors, and tandem solar cells on Si. However, an ultra-thin Ge buffer layer (referred to as (Ge) hereafter) technology described in this chapter has created new fields for applications. One of the emerging fields is the structure and properties of AlGaAs/GaAs/(Ge)/Si/Ge, which has been impossible to create previously using the thick Ge buffer on Si technology. Here, we demonstrate an application as a new green power generation platform, i.e., high-efficiency cost-effective tandem solar cells using Si as a cell as well as the mechanical substrate. The (Ge) thickness has not been fully optimized yet, but is in the range 10-20 nm. Our design for a tandem solar cell shows that its theoretical efficiency reaches 43%. The key attributes are the crystalline quality and surface roughness of ultrathin (Ge). We have experimentally optimized the (Ge) buffer thickness to achieve both requirements and prototyped Ge solar cells on Si. The Ge solar cells have successfully reproduced their ideal external quantum efficiency. This is the proof of concept of the success of the Ge challenge as the material enabler to integrate Si and GaAs.

  17. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    NASA Astrophysics Data System (ADS)

    Mujica, Andrés; Pickard, Chris J.; Needs, Richard J.

    2015-06-01

    Searches for low-energy tetrahedral polymorphs of carbon and silicon have been performed using density functional theory computations and the ab initio random structure searching approach. Several of the hypothetical phases obtained in our searches have enthalpies that are lower or comparable to those of other polymorphs of group 14 elements that have either been experimentally synthesized or recently proposed as the structure of unknown phases obtained in experiments, and should thus be considered as particularly interesting candidates. A structure of P b a m symmetry with 24 atoms in the unit cell was found to be a low-energy, low-density metastable polymorph in carbon, silicon, and germanium. In silicon, P b a m is found to have a direct band gap at the zone center with an estimated value of 1.4 eV, which suggests applications as a photovoltaic material. We have also found a low-energy chiral framework structure of P 41212 symmetry with 20 atoms per cell containing fivefold spirals of atoms, whose projected topology is that of the so-called Cairo-type two-dimensional pentagonal tiling. We suggest that P 41212 is a likely candidate for the structure of the unknown phase XIII of silicon. We discuss P b a m and P 41212 in detail, contrasting their energetics and structures with those of other group 14 elements, particularly the recently proposed P 42/n c m structure, for which we also provide a detailed interpretation as a network of tilted diamondlike tetrahedra.

  18. Nanoscale morphology and photoemission of arsenic implanted germanium films

    NASA Astrophysics Data System (ADS)

    Petö, G.; Khanh, N. Q.; Horváth, Z. E.; Molnár, G.; Gyulai, J.; Kótai, E.; Guczi, L.; Frey, L.

    2006-04-01

    Germanium films of 140 nm thickness deposited onto Si substrate were implanted with 70 keV arsenic ions with a dose of 2.5×1014 cm-2. The morphology of the implanted films was determined by Rutherford backscattering and cross-sectional transmission electron microscopy. Concentration of oxygen and carbon impurities and their distribution in the implanted layer were detected by secondary-ion-mass spectroscopy and nuclear reaction analysis using the O16(He4,He4)O16 reaction. The depth dependence of the valence band density of states was investigated by measuring the energy distribution curve of photoelectrons using Ar ion etching for profiling. The morphology of As implanted film was dominated by nanosized (10-100 nm) Ge islands separated by empty bubbles at a depth of 20-50 nm under the surface. At depth ranges of 0-20 and 70 to a measured depth of 140 nm, however, morphology of the as-evaporated Ge film was not modified. At a depth of 20-50 nm, photoelectron spectra were similar to those obtained for Ge amorphized with heavy ion (Sb) implantation [implantation induced (I.I.) a-Ge]. The depth profile of the morphology and the photoemission data indicate correlation between the morphology and valence band density of states of the ion I.I. a-Ge. As this regime was formed deep in the evaporated film, i.e., isolated from the environment, any contamination, etc., effect can be excluded. The depth distribution of this I.I. a-Ge layer shows that the atomic displacement process cannot account for its formation.

  19. Low Power Silicon Germanium Electronics for Microwave Radiometers

    NASA Technical Reports Server (NTRS)

    Doiron, Terence A.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

  20. Detached Solidification of Germanium-Silicon Crystals on the ISS

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  1. Sulfide Intrusion and Detoxification in the Seagrass Zostera marina

    PubMed Central

    Hasler-Sheetal, Harald; Holmer, Marianne

    2015-01-01

    Gaseous sulfide intrusion into seagrasses growing in sulfidic sediments causes little or no harm to the plant, indicating the presence of an unknown sulfide tolerance or detoxification mechanism. We assessed such mechanism in the seagrass Zostera marina in the laboratory and in the field with scanning electron microscopy coupled to energy dispersive X-ray spectroscopy, chromatographic and spectrophotometric methods, and stable isotope tracing coupled with a mass balance of sulfur compounds. We found that Z. marina detoxified gaseous sediment-derived sulfide through incorporation and that most of the detoxification occurred in underground tissues, where sulfide intrusion was greatest. Elemental sulfur was a major detoxification compound, precipitating on the inner wall of the aerenchyma of underground tissues. Sulfide was metabolized into thiols and entered the plant sulfur metabolism as well as being stored as sulfate throughout the plant. We conclude that avoidance of sulfide exposure by reoxidation of sulfide in the rhizosphere or aerenchyma and tolerance of sulfide intrusion by incorporation of sulfur in the plant are likely major survival strategies of seagrasses in sulfidic sediments. PMID:26030258

  2. The Evolution of Sulfide Tolerance in the Cyanobacteria

    NASA Technical Reports Server (NTRS)

    Miller, Scott R.; Bebout, Brad M.; DeVincenzi, Donald L. (Technical Monitor)

    2000-01-01

    Understanding how the function of extant microorganisms has recorded both their evolutionary histories and their past interactions with the environment is a stated goal of astrobiology. We are taking a multidisciplinary approach to investigate the diversification of sulfide tolerance mechanisms in the cyanobacteria, which vary both in their degree of exposure to sulfide and in their capacity to tolerate this inhibitor of photosynthetic electron transport. Since conditions were very reducing during the first part of Earth's history and detrital sulfides have been found in Archean sediments, mechanisms conferring sulfide tolerance may have been important for the evolutionary success of the ancestors of extant cyanobacteria. Two tolerance mechanisms have been identified in this group: (1) resistance of photosystem II, the principal target of sulfide toxicity; and (2) maintenance of the ability to fix carbon despite photosystem II inhibition by utilizing sulfide as an electron donor in photosystem I - dependent, anoxygenic photosynthesis. We are presently collecting comparative data on aspects of sulfide physiology for laboratory clones isolated from a variety of habitats. These data will be analyzed within a phylogenetic framework inferred from molecular sequence data collected for these clones to test how frequently different mechanisms of tolerance have evolved and which tolerance mechanism evolved first. In addition, by analyzing these physiological data together with environmental sulfide data collected from our research sites using microelectrodes, we can also test whether the breadth of an organism's sulfide tolerance can be predicted from the magnitude of variation in environmental sulfide concentration it has experienced in its recent evolutionary past and whether greater average sulfide concentration and/or temporal variability in sulfide favors the evolution of a particular mechanism of sulfide tolerance.

  3. Enhanced reductive dechlorination of trichloroethylene by sulfidated nanoscale zerovalent iron.

    PubMed

    Rajajayavel, Sai Rajasekar C; Ghoshal, Subhasis

    2015-07-01

    Direct injection of reactive nanoscale zerovalent iron particles (NZVI) is considered to be a promising approach for remediation of aquifers contaminated by chlorinated organic pollutants. In this study we show that the extent of sulfidation of NZVI enhances the rate of dechlorination of trichloroethylene (TCE) compared to that by unamended NZVI, and the enhancement depends on the Fe/S molar ratio. Experiments where TCE was reacted with NZVI sulfidated to different extents (Fe/S molar ratios 0.62-66) showed that the surface-area normalized first-order TCE degradation rate constant increased up to 40 folds compared to non-sulfidated NZVI. Fe/S ratios in the range of 12-25 provided the highest TCE dechlorination rates, and rates decreased at both higher and lower Fe/S. In contrast, sulfidated NZVI exposed to water in the absence of TCE showed significantly lower hydrogen evolution rate (2.75 μmol L(-1) h(-1)) compared to that by an unamended NZVI (6.92 μmol L(-1) h(-1)), indicating that sulfidation of NZVI suppressed corrosion reactions with water. Sulfide (HS(-)) ions reacted rapidly with NZVI and X-ray photoelectron spectroscopy analyses showed formation of a surface layer of FeS and FeS2. We propose that more electrons are preferentially conducted from sulfidated NZVI than from unamended NZVI to TCE, likely because of greater binding of TCE on the reactive sites of the iron sulfide outer layer. Resuspending sulfidated NZVI in sulfide-free or sulfide containing solutions altered the TCE degradation rate constants because of changes in the FeS layer thickness. Sulfidated NZVI maintained its high reactivity in the presence of multiple mono and divalent ions and with polyelectrolyte coatings. Thus, sulfide ions in groundwater can significantly alter NZVI reactivity.

  4. Cadmium zinc sulfide by solution growth

    DOEpatents

    Chen, Wen S.

    1992-05-12

    A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

  5. Iron-sulfide redox flow batteries

    SciTech Connect

    Xia, Guan-Guang; Yang, Zhenguo; Li, Liyu; Kim, Soowhan; Liu, Jun; Graff, Gordon L

    2013-12-17

    Iron-sulfide redox flow battery (RFB) systems can be advantageous for energy storage, particularly when the electrolytes have pH values greater than 6. Such systems can exhibit excellent energy conversion efficiency and stability and can utilize low-cost materials that are relatively safer and more environmentally friendly. One example of an iron-sulfide RFB is characterized by a positive electrolyte that comprises Fe(III) and/or Fe(II) in a positive electrolyte supporting solution, a negative electrolyte that comprises S.sup.2- and/or S in a negative electrolyte supporting solution, and a membrane, or a separator, that separates the positive electrolyte and electrode from the negative electrolyte and electrode.

  6. Iron-sulfide redox flow batteries

    DOEpatents

    Xia, Guanguang; Yang, Zhenguo; Li, Liyu; Kim, Soowhan; Liu, Jun; Graff, Gordon L

    2016-06-14

    Iron-sulfide redox flow battery (RFB) systems can be advantageous for energy storage, particularly when the electrolytes have pH values greater than 6. Such systems can exhibit excellent energy conversion efficiency and stability and can utilize low-cost materials that are relatively safer and more environmentally friendly. One example of an iron-sulfide RFB is characterized by a positive electrolyte that comprises Fe(III) and/or Fe(II) in a positive electrolyte supporting solution, a negative electrolyte that comprises S.sup.2- and/or S in a negative electrolyte supporting solution, and a membrane, or a separator, that separates the positive electrolyte and electrode from the negative electrolyte and electrode.

  7. Removal of the long-lived {sup 222}Rn daughters from steel and germanium surfaces

    SciTech Connect

    Wojcik, Marcin; Zuzel, Grzegorz; Majorovits, Bela

    2011-04-27

    Removal of the long-lived {sup 222}Rn daughters ({sup 210}Pb, {sup 210}Bi and {sup 210}Po) from stainless steel and germanium surfaces was investigated. As cleaning technique etching was applied to samples in a form of discs exposed earlier to a strong radon source. Reduction of the {sup 210}Pb activity was tested using a HPGe spectrometer, for {sup 210}Bi a beta spectrometer and for {sup 210}Po an alpha spectrometer was used. According to the conducted measurements all the isotopes were removed very efficiently from germanium. Results obtained for stainless steel were worse but still better than those achieved for copper.

  8. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  9. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    NASA Astrophysics Data System (ADS)

    Heusser, G.; Weber, M.; Hakenmüller, J.; Laubenstein, M.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H.

    2015-11-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100 \\upmu Bq kg^{-1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  10. Initial Field Measurements with the Multisensor Airborne Radiation Survey (MARS) High Purity Germanium (HPGe) Detector Array

    SciTech Connect

    Fast, James E.; Bonebrake, Christopher A.; Dorow, Kevin E.; Glasgow, Brian D.; Jensen, Jeffrey L.; Morris, Scott J.; Orrell, John L.; Pitts, W. Karl; Rohrer, John S.; Todd, Lindsay C.

    2010-06-29

    Abstract: The Multi-sensor Airborne Radiation Survey (MARS) project has developed a new single cryostat detector array design for high purity germanium (HPGe) gamma ray spectrometers that achieves the high detection efficiency required for stand-off detection and actionable characterization of radiological threats. This approach is necessary since a high efficiency HPGe detector can only be built as an array due to limitations in growing large germanium crystals. The system is ruggedized and shock mounted for use in a variety of field applications. This paper reports on results from initial field measurements conducted in a truck and on two different boats.

  11. Temperature-dependent hyperfine interactions at 111Cd-C complex in germanium

    NASA Astrophysics Data System (ADS)

    Mola, Genene Tessema

    2013-09-01

    The temperature dependent nuclear hyperfine interaction of 111Cd-carbon complex in germanium has been studied using the perturbed γ- γ angular correlation (PAC) method. The parameters of the hyperfine interaction representing substitutional carbon-cadmium complex in germanium ( ν Q1=207(1) MHz ( η=0.16)) shows dependence on temperature. The formation and thermal stability of the complex has been reported by the same author earlier. It was found in this study that the quadrupole coupling constant of the interaction increases at sample temperature below 293 K. The results are encouraging toward better understanding of the complex in the host matrix.

  12. Ionization Measurements of SuperCDMS SNOLAB 100 mm Diameter Germanium Crystals

    SciTech Connect

    Chagani, H.; Bauer, D.A.; Brandt, D.; Brink, P.L.; Cabrera, B.; Cherry, M.; Silva, E.Do Couto e; Godfrey, G.G.; Hall, J.; Hansen, S.; Hasi, J.; Kelsey, M.; Kenney, C.J.; Mandic, V.; Nagasawa, D.; Novak, L.; Mirabolfathi, N.; Partridge, R.; Radpour, R.; Resch, R.; Sadoulet, B.; /UC, Berkeley /Stanford U. /SLAC /Stanford U. /Santa Clara U. /Minnesota U.

    2012-06-12

    Scaling cryogenic Germanium-based dark matter detectors to probe smaller WIMP-nucleon cross-sections poses significant challenges in the forms of increased labor, cold hardware, warm electronics and heat load. The development of larger crystals alleviates these issues. The results of ionization tests with two 100 mm diameter, 33 mm thick cylindrical detector-grade Germanium crystals are presented here. Through these results the potential of using such crystals in the Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment is demonstrated.

  13. Investigation into Methods to Improve Ion Source Life for Germanium Implantation

    NASA Astrophysics Data System (ADS)

    Sweeney, Joseph; Sergi, Steven; Tang, Ying; Byl, Oleg; Yedave, Sharad; Kaim, Robert; Bishop, Steve

    2011-01-01

    Germanium tetrafluoride has long been the standard dopant gas of choice for germanium implantation processes. While this material maintains several positive attributes (e.g., it is a nonflammable gas that is easily delivered to an ion source), its use can result in extremely short ion source lifetimes. This is especially the case for the situation when an ion implanter runs solely or predominantly GeF4. Presented here is an examination of various potential solutions to the short source life problem, some of which enable significant improvement.

  14. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  15. Reductant-free colloidal synthesis of near-IR emitting germanium nanocrystals: role of primary amine.

    PubMed

    Ghosh, Batu; Ogawara, Makoto; Sakka, Yoshio; Shirahata, Naoto

    2014-03-01

    High temperature colloidal synthesis without using hazardous reducing agent is demonstrated here to develop a straight forward pathway for synthesizing near-IR (NIR) light emitting germanium nanocrystals (Ge NCs). The NCs were prepared by heating a mixture of germanium (II) iodide and organoamine. This article presents an important role of the primary amine which serves as a reducing agent as well as an inhibitor against oxidation by comparing with the tertiary amine. Interestingly, the difference in chemical reactivity between each amine causes the difference in major structural phase of the products. An efficient route to produce NIR light emitting Ge NCs is demonstrated.

  16. Probing the Electronic Density of States of Germanium Nanoparticles: A Method for Determining Atomic Structure

    SciTech Connect

    Williamson, A; Bostedt, C; van Buuren, T; Willey, T; Terminello, L; Galli, G; Pizzagalli, L

    2004-03-31

    We present first principles electronic structure calculations and photoemission measurements of the change in the valence band DOS of germanium as its dimensions are reduced from the bulk to the nanoscale. By comparing the calculated broadening of the s and s--p band peaks and the energy of surface dangling bonds to the measured DOS we identify the most likely structure of these nanoparticles. We propose that, in contrast to recent interpretations, small 2-3 nm germanium nanoparticles prepared by gas phase aggregation have a distorted diamond structure core and a thermally disordered surface.

  17. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    SciTech Connect

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  18. Microstructures of niobium-germanium alloys processed in inert gas in the 100 meter drop tube

    NASA Technical Reports Server (NTRS)

    Bayuzick, R. J.; Robinson, M. B.; Hofmeister, W. H.; Evans, N. D.

    1986-01-01

    The 100 meter drop tube at NASA's Marshall Space Flight Center has been used for a series of experiments with niobium-germanium alloys. These experiments were conducted with electromagnetic levitation melting in a 200 torr helium environment. Liquid alloys experienced large degrees of undercooling prior to solidification in the drop tube. Several interesting metastable structures were observed. However, the recalescence event prevented extended solid solubility of germanium in the A-15 beta phase. Liquids of eutectic composition were found to undercool in the presence of solid alpha and solid Nb5Ge3.

  19. Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction.

    PubMed

    Cavalleri, A; Siders, C W; Brown, F L; Leitner, D M; Tóth, C; Squier, J A; Barty, C P; Wilson, K R; Sokolowski-Tinten, K; Horn Von Hoegen, M; von der Linde, D; Kammler, M

    2000-07-17

    Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium.

  20. Subsurface heaters with low sulfidation rates

    SciTech Connect

    John, Randy Carl; Vinegar, Harold J

    2013-12-10

    A system for heating a hydrocarbon containing formation includes a heater having an elongated ferromagnetic metal heater section. The heater is located in an opening in a formation. The heater section is configured to heat the hydrocarbon containing formation. The exposed ferromagnetic metal has a sulfidation rate that goes down with increasing temperature of the heater, when the heater is in a selected temperature range.

  1. Hydrogen sulfide prodrugs—a review

    PubMed Central

    Zheng, Yueqin; Ji, Xingyue; Ji, Kaili; Wang, Binghe

    2015-01-01

    Hydrogen sulfide (H2S) is recognized as one of three gasotransmitters together with nitric oxide (NO) and carbon monoxide (CO). As a signaling molecule, H2S plays an important role in physiology and shows great potential in pharmaceutical applications. Along this line, there is a need for the development of H2S prodrugs for various reasons. In this review, we summarize different H2S prodrugs, their chemical properties, and some of their potential therapeutic applications. PMID:26579468

  2. Single-layer transition metal sulfide catalysts

    SciTech Connect

    Thoma, Steven G.

    2011-05-31

    Transition Metal Sulfides (TMS), such as molybdenum disulfide (MoS.sub.2), are the petroleum industry's "workhorse" catalysts for upgrading heavy petroleum feedstocks and removing sulfur, nitrogen and other pollutants from fuels. We have developed an improved synthesis technique to produce SLTMS catalysts, such as molybdenum disulfide, with potentially greater activity and specificity than those currently available. Applications for this technology include heavy feed upgrading, in-situ catalysis, bio-fuel conversion and coal liquefaction.

  3. Redetermination of piperidinium hydrogen sulfide structure

    NASA Technical Reports Server (NTRS)

    Andras, Maria T.; Hepp, Aloysius F.; Fanwick, Phillip E.; Duraj, Stan A.; Gordon, Edward M.

    1994-01-01

    The presence of adventitious water in a reaction between dicyclopentamethylene thiuram-disulfide (C5H10NCS2)(sub 2) and a picoline solution of tricyclopentadienyl indium(III) (C5H5)(sub 3). It resulted in the formation of piperidinium hydrogen sulfide (C5H13NS). The piperidinium hydrogen sulfide produced in this way was unambiguously characterized by X-ray crystallography. The structure determination showed that the piperidinium hydrogen sulfide crystal (MW = 119.23 g/mol) has an orthorhombic (Pbcm) unit cell whose parameters are: a = 9.818(2), b = 7.3720(1), c = 9.754(1) A, V = 706.0(3) A(exp 3), Z=4. D(sub chi) = 1.122 g cm(exp -3), Mo K(alpha) (lamda = 0.71073), mu= 3.36 cm(exp -1), F(000) = 264.0, T =293 K, R = 0.036 for 343 reflections with F(sub O)(sup 2) greater than 3 sigma (F(sub O)(sup 2)) and 65 variables. The compound consists of (C5H10NH2)(+) cations and (SH)(-) anions with both species residing on crystallographic mirror planes. N-H -- S hydrogen bonding contributes to the interconnection of neighboring piperidinium components of the compound.

  4. Hydrocracking of n-decane over zeolite-supported metal sulfide catalysts. 2: Zeolite Y-supported Ni and Ni-Mo sulfides

    SciTech Connect

    Welters, W.J.J.; Waerden, O.H. van der; Beer, V.H.J. de; Santen, R.A. van

    1995-04-01

    For zeolite Y-supported nickel sulfide catalysts the influence of the metal sulfide dispersion on the hydrocracking properties for n-decane is examined. In order to obtain different nickel sulfide distributions (inside or outside the zeolite structure) and dispersions, the preparation method (impregnation of CaY or ion exchange of NaY), sulfidation procedure (direct sulfidation or sulfidation after drying), and metal loading are varied. A higher nickel sulfide surface (as measured by dynamic oxygen chemisorption) results in a strong increase of the n-decane conversion, but this is not accompanied by an improvement of the catalytic properties toward ideal hydrocracking. Additionally, some zeolite Y-supported Ni-Mo sulfide catalysts (varying in preparation method and sulfidation procedure) are tested for the hydroconversion of it-decane. However, no promoter effect could be observed. The activity of the bimetallic sulfide catalysts is always almost equal to that of the most active monometallic sulfide constituent.

  5. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    SciTech Connect

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-14

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  6. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Li, Lingzi; Tok, Eng Soon; Yeo, Yee-Chia

    2015-06-01

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge0.83Sn0.17-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge0.83Sn0.17) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge0.83Sn0.17 during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge0.83Sn0.17 layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal ⟨100⟩ azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge0.83Sn0.17 thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (Ec) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to "cellular precipitation." This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  7. Microaeration for hydrogen sulfide removal in UASB reactor.

    PubMed

    Krayzelova, Lucie; Bartacek, Jan; Kolesarova, Nina; Jenicek, Pavel

    2014-11-01

    The removal of hydrogen sulfide from biogas by microaeration was studied in Up-flow Anaerobic Sludge Blanket (UASB) reactors treating synthetic brewery wastewater. A fully anaerobic UASB reactor served as a control while air was dosed into a microaerobic UASB reactor (UMSB). After a year of operation, sulfur balance was described in both reactors. In UASB, sulfur was mainly presented in the effluent as sulfide (49%) and in biogas as hydrogen sulfide (34%). In UMSB, 74% of sulfur was detected in the effluent (41% being sulfide and 33% being elemental sulfur), 10% accumulated in headspace as elemental sulfur and 9% escaped in biogas as hydrogen sulfide. The efficiency of hydrogen sulfide removal in UMSB was on average 73%. Microaeration did not cause any decrease in COD removal or methanogenic activity in UMSB and the elemental sulfur produced by microaeration did not accumulate in granular sludge. PMID:25270045

  8. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, B.S.; Gupta, R.P.

    1999-06-22

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream. 1 fig.

  9. Sensitive sulfide sensor with a trypsin-stabilized gold nanocluster.

    PubMed

    Fan, Jun; Li, Ruiping; Xu, Pingping; Di, Junwei; Tu, Yifeng; Yan, Jilin

    2014-01-01

    In this work, we synthesized a trypsin-stabilized fluorescent gold nanocluster. It was found that sulfide interacted with the nanocluster, which could result in significant fluorescence quenching. With this quenching effect, a fluorescence sulfide sensor was developed. This sensor responded linearly to sulfide in the range of 50 nM to 8 μM, and was capable of detecting sulfide as low as 5.5 nM. This provided a facile and sensitive scheme for sulfide analysis; the mechanism of the sensor was also provided. The sensor was then tested for real sample analysis, and good recoveries were obtained. Furthermore, persulfate was found to be effective to remove the quenching of sulfide, and this interaction was adopted for an indirect analysis of persulfate.

  10. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

    1996-07-30

    A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

  11. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    1999-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  12. Metal sulfide initiators for metal oxide sorbent regeneration

    DOEpatents

    Turk, Brian S.; Gupta, Raghubir P.

    2001-01-01

    A process of regenerating a sulfided sorbent is provided. According to the process of the invention, a substantial portion of the energy necessary to initiate the regeneration reaction is provided by the combustion of a particulate metal sulfide additive. In using the particulate metal sulfide additive, the oxygen-containing gas used to regenerate the sulfided sorbent can be fed to the regeneration zone without heating or at a lower temperature than used in conventional processes wherein the regeneration reaction is initiated only by heating the oxygen-containing gas. The particulate metal sulfide additive is preferably an inexpensive mineral ore such as iron pyrite which does not adversely affect the regeneration or corresponding desulfurization reactions. The invention further includes a sorbent composition comprising the particulate metal sulfide additive in admixture with an active metal oxide sorbent capable of removing one or more sulfur compounds from a sulfur-containing gas stream.

  13. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    NASA Astrophysics Data System (ADS)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg‑1 (Ge 1.6 mgṡkg‑1, Nd 25 mgṡkg‑1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg‑1Nd) were several times higher than in herbaceous species (0.05 mgṡkg‑1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within

  14. Deposition and Examination of Glow Discharge Produced Amorphous Hydrogenated Germanium

    NASA Astrophysics Data System (ADS)

    Wickboldt, Paul

    1993-01-01

    This thesis presents the results of extensive studies of the deposition and examination of amorphous hydrogenated germanium (a-Ge:H) thin films deposited from an rf glow discharge of GeH_4 and H_2 gases. For the purpose of these studies, a diode-type capacitively coupled glow discharge system was constructed. Results are presented of the measurements of film stress for a large number of a-Ge:H films. The stress is found to vary from high tensile (+6.6 kbar) to high compressive (-7.8 kbar), and correlates with total hydrogen content, microstructure and photoconductivity. The origin of these stresses is considered and discussed in the context of other measurements. The effects of air exposure and annealing are demonstrated. Two examples are given of the effects of varying a deposition parameter on the film properties; the effects of varying the electrode gap and the power. By piecing together extensive measurements of optical, electronic and structural properties, the electrode gap study is used to demonstrate the link between structure and electronic transport, and to clarify an earlier model of a-Ge:H film structure. The results suggest a strategy for further optimization of a-Ge:H optoelectronic properties by adjusting growth conditions to reduce the formation of columnar-type microstructure. Finally, a basic examination of the GeH _4 + H_2 glow discharge is presented. Using measurements of the DC and rf cathode potentials, it is determined that the discharges used to deposit a-Ge:H are in the so called gamma mode in which the discharge characteristics are dominated by ion-induced electron emission (gamma electrons) from the cathode. The, using a residual gas analyzer (RGA), an examination is made of discharge chemistry which centers around a comparison of SiH _{rm 4} + H_2 chemistry. Significant differences between SiH _{rm 4} + H _2 and GeH_4 + H _2 chemistry are demonstrated, and possible explanations are discussed. Measurements were then made to determine the

  15. High bit rate germanium single photon detectors for 1310nm

    NASA Astrophysics Data System (ADS)

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  16. High duty cycle far-infrared germanium lasers

    NASA Astrophysics Data System (ADS)

    Chamberlin, Danielle Russell

    The effects of crystal geometry, heat transport, and optics on high duty cycle germanium hole population inversion lasers are investigated. Currently the laser's low duty cycle limits its utility for many applications. This low duty cycle is a result of the combination of the large electrical input power necessary and insufficient heat extraction. In order to achieve a continuous-wave device, the input power must be decreased and the cooling power increased. In order to improve laser efficiency and lower the input power, the effect of laser crystal geometry on the electric field uniformity is considered. Geometries with d/L>>1 or <<1 are shown to have improved electric field uniformity, where d is the distance between electrical contacts and L is the length in the direction of the Hall electric field. A geometry with d/L>>1 is shown to decrease the threshold voltage for lasing. Laser crystals with the traditional contact geometry have been compared to a new, planar contact design with both electrical contacts on the same side of the laser crystal. This new geometry provides a large d/L ratio while also allowing effective heat sinking. A pure, single-crystal silicon heat sink is developed for planar contact design lasers, which improves the duty cycle tenfold. For the traditional contact design, copper heat sinks are developed that demonstrate cooling powers up to 10 Watts. The effects of thermal conductivity, surface area, and interfacial thermal resistance on the heat transport are compared. To improve the cavity quality, thereby allowing for smaller crystal volumes, new optical designs are investigated. A vertical cavity structure is demonstrated for the planar contact structure using strontium titanate single crystals as mirrors. A mode-selecting cavity is implemented for the traditional contact design. The spectra of small-volume, near-threshold lasers are measured. In contrast to the emission of larger lasers, these lasers emit within narrow frequency peaks

  17. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    NASA Astrophysics Data System (ADS)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  18. Limitation of Sulfide Capacity Concept for Molten Slags

    NASA Astrophysics Data System (ADS)

    Jung, In-Ho; Moosavi-Khoonsari, Elmira

    2016-04-01

    The sulfide capacity concept has been widely used in pyrometallurgy to define sulfur removal capacities of slags. Typically, the sulfide capacity is considered to be a unique slag property depending only on temperature regardless of partial pressures of oxygen and sulfur. In the present study, it is demonstrated that sulfide capacities of slags in particular those of Na2O-containing slags can vary with partial pressures of oxygen and sulfur due to large solubility of sulfide in Na2O-containing slag systems.

  19. Influence of iron on sulfide inhibition in dark biohydrogen fermentation.

    PubMed

    Dhar, Bipro Ranjan; Elbeshbishy, Elsayed; Nakhla, George

    2012-12-01

    Sulfide impact on biohydrogen production using dark fermentation of glucose at 37 °C was investigated. Dissolved sulfide (S(2-)) at a low concentration (25mg/L) increased biohydrogen production by 54% relative to the control (without iron addition). Whereas on initial dissolved S(2-) concentration of 500 mg/L significantly inhibited the biohydrogen production with total cumulative biohydrogen decreasing by 90% compared to the control (without iron addition). At sulfide concentrations of 500 mg S(2-)/L, addition of Fe(2+) at 3-4 times the theoretical requirement to precipitate 100% of the dissolved S(2-) entirely eliminated the inhibitory effect of sulfide.

  20. Germanium determination by flame atomic absorption spectrometry: an increased vapor pressure-chloride generation system.

    PubMed

    Kaya, Murat; Volkan, Mürvet

    2011-03-15

    A new chloride generation system was designed for the direct, sensitive, rapid and accurate determination of the total germanium in complex matrices. It was aimed to improve the detection limit of chloride generation technique by increasing the vapor pressure of germanium tetrachloride (GeCl(4)). In order to do so, a novel joint vapor production and gas-liquid separation unit equipped with a home-made oven was incorporated to an ordinary nitrous oxide-acetylene flame atomic absorption spectrometer. Several variables such as reaction time, temperature and acid concentration have been investigated. The linear range for germanium determination was 0.1-10 ng mL(-1) for 1 mL sampling volume with a detection limit (3s) of 0.01 ng mL(-1). The relative standard deviation (RSD) was 2.4% for nine replicates of a 1 ng mL(-1) germanium solution. The method was validated by the analysis of one non-certified and two certified geochemical reference materials, respectively, CRM GSJ-JR-2 (Rhyolite), and GSJ-JR-1 (Rhyolite), and GBW 07107 (Chinese Rock). Selectivity of the method was investigated for Cd(2+), Co(2+), Cu(2+), Fe(3+), Ga(3+), Hg(2+), Ni(2+), Pb(2+), Sn(2+), and Zn(2+) ions and ionic species of As(III), Sb(III), Te(IV), and Se(IV). PMID:21315908

  1. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-07-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen‑ (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen‑ clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen‑/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

  2. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations.

    PubMed

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-07-21

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen(-) clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen(-/0) clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

  3. Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode.

    PubMed

    Grinblat, Gustavo; Li, Yi; Nielsen, Michael P; Oulton, Rupert F; Maier, Stefan A

    2016-07-13

    We present an all-dielectric germanium nanosystem exhibiting a strong third order nonlinear response and efficient third harmonic generation in the optical regime. A thin germanium nanodisk shows a pronounced valley in its scattering cross section at the dark anapole mode, while the electric field energy inside the disk is maximized due to high confinement within the dielectric. We investigate the dependence of the third harmonic signal on disk size and pump wavelength to reveal the nature of the anapole mode. Each germanium nanodisk generates a high effective third order susceptibility of χ((3)) = 4.3 × 10(-9) esu, corresponding to an associated third harmonic conversion efficiency of 0.0001% at an excitation wavelength of 1650 nm, which is 4 orders of magnitude greater than the case of an unstructured germanium reference film. Furthermore, the nonlinear conversion via the anapole mode outperforms that via the radiative dipolar resonances by about 1 order of magnitude, which is consistent with our numerical simulations. These findings open new possibilities for the optimization of upconversion processes on the nanoscale through the appropriate engineering of suitable dielectric materials.

  4. Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

    NASA Astrophysics Data System (ADS)

    Liu, J. P.; Li, K.; Pandey, S. M.; Benistant, F. L.; See, A.; Zhou, M. S.; Hsia, L. C.; Schampers, Ruud; Klenov, Dmitri O.

    2008-12-01

    We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

  5. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    PubMed Central

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-01-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

  6. Germanium determination by flame atomic absorption spectrometry: an increased vapor pressure-chloride generation system.

    PubMed

    Kaya, Murat; Volkan, Mürvet

    2011-03-15

    A new chloride generation system was designed for the direct, sensitive, rapid and accurate determination of the total germanium in complex matrices. It was aimed to improve the detection limit of chloride generation technique by increasing the vapor pressure of germanium tetrachloride (GeCl(4)). In order to do so, a novel joint vapor production and gas-liquid separation unit equipped with a home-made oven was incorporated to an ordinary nitrous oxide-acetylene flame atomic absorption spectrometer. Several variables such as reaction time, temperature and acid concentration have been investigated. The linear range for germanium determination was 0.1-10 ng mL(-1) for 1 mL sampling volume with a detection limit (3s) of 0.01 ng mL(-1). The relative standard deviation (RSD) was 2.4% for nine replicates of a 1 ng mL(-1) germanium solution. The method was validated by the analysis of one non-certified and two certified geochemical reference materials, respectively, CRM GSJ-JR-2 (Rhyolite), and GSJ-JR-1 (Rhyolite), and GBW 07107 (Chinese Rock). Selectivity of the method was investigated for Cd(2+), Co(2+), Cu(2+), Fe(3+), Ga(3+), Hg(2+), Ni(2+), Pb(2+), Sn(2+), and Zn(2+) ions and ionic species of As(III), Sb(III), Te(IV), and Se(IV).

  7. Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode.

    PubMed

    Grinblat, Gustavo; Li, Yi; Nielsen, Michael P; Oulton, Rupert F; Maier, Stefan A

    2016-07-13

    We present an all-dielectric germanium nanosystem exhibiting a strong third order nonlinear response and efficient third harmonic generation in the optical regime. A thin germanium nanodisk shows a pronounced valley in its scattering cross section at the dark anapole mode, while the electric field energy inside the disk is maximized due to high confinement within the dielectric. We investigate the dependence of the third harmonic signal on disk size and pump wavelength to reveal the nature of the anapole mode. Each germanium nanodisk generates a high effective third order susceptibility of χ((3)) = 4.3 × 10(-9) esu, corresponding to an associated third harmonic conversion efficiency of 0.0001% at an excitation wavelength of 1650 nm, which is 4 orders of magnitude greater than the case of an unstructured germanium reference film. Furthermore, the nonlinear conversion via the anapole mode outperforms that via the radiative dipolar resonances by about 1 order of magnitude, which is consistent with our numerical simulations. These findings open new possibilities for the optimization of upconversion processes on the nanoscale through the appropriate engineering of suitable dielectric materials. PMID:27331867

  8. Femtosecond third-order nonlinear spectra of lead-germanium oxide glasses containing silver nanoparticles.

    PubMed

    De Boni, Leonardo; Barbano, Emerson C; de Assumpção, Thiago A; Misoguti, Lino; Kassab, Luciana R P; Zilio, Sergio C

    2012-03-12

    This work reports on the spectral dependence of both nonlinear refraction and absorption in lead-germanium oxide glasses (PbO-GeO₂) containing silver nanoparticles. We have found that this material is suitable for all-optical switching at telecom wavelengths but at the visible range it behaves either as a saturable absorber or as an optical limiter.

  9. Thermophysical Properties of Molten Germanium Measured by the High Temperature Electrostatic Levitator

    NASA Technical Reports Server (NTRS)

    Rhim, W. K.; Ishikawa, T.

    1998-01-01

    Thermophysical properties of molten germanium such as the density, the thermal expansion coefficient, the hemisphereical total emissivity, the constant pressure specific heat capacity, the surface tension, and the electrical resistivity have been measured using the High Temperature Electrostatic Levitator at JPL.

  10. High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

    1993-01-01

    Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

  11. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations.

    PubMed

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-01-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen(-) clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen(-/0) clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

  12. Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Burt, Daniel; Aldeek, Waseem; Aldaghri, Osamah A.; Ikonic, Zoran; Querin, Oswaldo M.; Kelsall, Robert W.

    2016-05-01

    The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium

  13. Evidence supporting biologically mediated sulfide oxidation in hot spring ecosystems

    NASA Astrophysics Data System (ADS)

    Cox, A. D.; Shock, E.

    2011-12-01

    The sulfide concentration of fluids in hydrothermal ecosystems is one of several factors determining the transition to microbial photosynthesis (Cox et al., 2011, Chem. Geol. 280, 344-351). To investigate the loss of sulfide in Yellowstone hot spring systems, measurements of total dissolved sulfide with respect to time were made in incubation experiments conducted on 0.2-micron filtered (killed controls) vs. unfiltered hot spring water at locations with three different pH:sulfide combinations (pH 2.5 with 50 μM sulfide, 5.2 with 5.6 μM sulfide, and 8.3 with 86 μM sulfide). At the higher pH values, the experiments yielded similar rates of sulfide loss in filtered and unfiltered water of approximately 0.8 (pH 5.2) and 7.6 nmol sulfide L-1s-1 (pH 8.3). At the acidic spring, the unfiltered water lost sulfide at a rate 1.6 times that of the filtered water (8.2 vs. 5 nmol sulfide L-1s-1). These results suggest that the pelagic biomass at the pH 5.2 and 8.3 springs may not affect sulfide loss, whereas in the pH 2.5 spring there appears to be an effect. In addition, the incubation of filamentous biomass with unfiltered water increased the rate of sulfide loss by approximately two-fold at a pH of 2.5 (59 vs. 31 nmol L-1s-1; Cox et al., 2011), five-fold at a pH of 5.2 (3.9 vs. 0.8 nmol sulfide L-1s-1), and barely increased the rate of sulfide loss at a pH of 8.3 (9.1 vs. 8.4 nmol sulfide L-1s-1). Sulfide is predominately present as HS- at a pH of 8.3, which may not be taken up as easily by microorganisms as the H2S (aq) that dominates sulfide speciation at pH 2.5 and 5.2. That the loss of sulfide at acidic pH is due to biotic rather than abiotic factors is further supported by studies with whole mat samples that show greater sulfide consumption than killed controls (D'Imperio et al., 2008, AEM 74, 5802-5808). Taken together, the results of these experiments suggest that the majority of sulfide oxidation occurs in the filamentous biomass of hot spring ecosystems, although

  14. The Construction and Characterization of Native Insulators on Gallium-Arsenide and Germanium

    NASA Astrophysics Data System (ADS)

    Crisman, Everett Earle

    Because of the excellent electrical properties that are obtained at the interfaces between silicon and thermally grown "native" oxides and nitrides, metal-insulator -semiconductor field effect transistors (MISFET's) have become the basic elements in fast high density computer memories as well as a primary structure for probing semiconductor surface charge transport phenomena. As silicon surface mobilities approach the bulk mobility a physical constraint is also being approached with respect to speed and density. Other semiconductors with higher bulk mobilities have, therefore, been suggested as replacements for silicon: gallium arsenide because of its very high room temperature electron mobility and germanium because it is one of the few well studied semiconductors with electron and hole mobilities of nearly the same magnitude. Unlike silicon, Ge and GaAs do not react readily wit oxygen or nitrogen to form uniform layers of interface passivating "native" insulators. In this study, techniques are reported for making native insulators on gallium arsenide and germanium. On gallium arsenide, the insulator is an oxide formed by a plasma oxidation technique (POX). On germanium, oxides have been formed by a high pressure oxidation technique (HPO) and these subsequently have been converted to nitrides (or oxynitride) by reaction with ammonia gas. Details of the formation techniques and basic characterization of the insulators and insulator/semiconductor interface electrical properties are present. Surface mobilities of about 20% of the bulk values were measured for MISFET's constructed on both GaAs and Ge using native oxides as the insulator. Fixed interface charge density in the low to mid 10('11)/cm('2) and midgap densities of states in the high 10('11)/cm('2)-eV range were also measured on similar MIS capacitors. On germanium nitride structures fixed surface charge density and interface density of states were both measured to be on the order of 10('10). Characterization

  15. Removal of copper from carbon-saturated steel with an aluminum sulfide/iron sulfide slag

    SciTech Connect

    Cohen, A.; Blander, M.

    1995-12-01

    Scrap iron and steel has long been considered a resource in the steel-making industry, and its value is largely determined by its impurity content. As the mini-mills, the major consumers of scrap iron and steel, expand into producing flat-rolled sheet, the demand for high-quality scrap will increase. Of the impurities present in scrap, copper is particularly troublesome because of its role in causing hot shortness. Therefore, the copper content of scrap should be kept below {approx} 0.1 wt%. A method for removing copper from steel could be used to improve the quality of scrap and make it more available for use by mini-mills. To determine the effectiveness of a binary slag consisting of aluminum sulfide and iron sulfide on the removal of copper from steel and iron, the distribution coefficient of copper between the slag and a carbon-saturated iron melt was investigated at 1,365 C. The composition of the slag was varied from nearly pure aluminum sulfide to pure iron sulfide. A maximum distribution coefficient of 30 was found, and the copper level in the iron melt was reduced to as low as 0.07 wt.% with a 4:1 ratio of iron to slag.

  16. Mitochondrial adaptations to utilize hydrogen sulfide for energy and signaling.

    PubMed

    Olson, Kenneth R

    2012-10-01

    Sulfur is a versatile molecule with oxidation states ranging from -2 to +6. From the beginning, sulfur has been inexorably entwined with the evolution of organisms. Reduced sulfur, prevalent in the prebiotic Earth and supplied from interstellar sources, was an integral component of early life as it could provide energy through oxidization, even in a weakly oxidizing environment, and it spontaneously reacted with iron to form iron-sulfur clusters that became the earliest biological catalysts and structural components of cells. The ability to cycle sulfur between reduced and oxidized states may have been key in the great endosymbiotic event that incorporated a sulfide-oxidizing α-protobacteria into a host sulfide-reducing Archea, resulting in the eukaryotic cell. As eukaryotes slowly adapted from a sulfidic and anoxic (euxinic) world to one that was highly oxidizing, numerous mechanisms developed to deal with increasing oxidants; namely, oxygen, and decreasing sulfide. Because there is rarely any reduced sulfur in the present-day environment, sulfur was historically ignored by biologists, except for an occasional report of sulfide toxicity. Twenty-five years ago, it became evident that the organisms in sulfide-rich environments could synthesize ATP from sulfide, 10 years later came the realization that animals might use sulfide as a signaling molecule, and only within the last 4 years did it become apparent that even mammals could derive energy from sulfide generated in the gastrointestinal tract. It has also become evident that, even in the present-day oxic environment, cells can exploit the redox chemistry of sulfide, most notably as a physiological transducer of oxygen availability. This review will examine how the legacy of sulfide metabolism has shaped natural selection and how some of these ancient biochemical pathways are still employed by modern-day eukaryotes. PMID:22430869

  17. Effect of sulfide ions on complement factor C3.

    PubMed Central

    Granlund-Edstedt, M; Johansson, E; Claesson, R; Carlsson, J

    1991-01-01

    In infected sites such as the gingival pockets of patients with periodontal disease, sulfide levels up to 1 mmol/liter may be reached. There is little information, however, on how sulfide may interact with the host defense. In a previous study (R. Claesson, M. Granlund-Edstedt, S. Persson, and J. Carlsson, Infect. Immun. 57:2776-2781, 1989), it was shown that polymorphonuclear leukocytes were able to kill bacteria in the presence of 1 mM sulfide. However, sulfide seemed to interfere with the opsonization of the bacteria. It has been claimed that sulfide may be toxic by splitting disulfide bonds of proteins. In the present study, serum was exposed to 2 mM sulfide under anaerobic conditions, and the capacity of sulfide to split disulfide bonds of 10 serum proteins involved in opsonization was evaluated by sodium dodecyl sulfate-polyacrylamide gel electrophoresis and immunodetection of the proteins after blotting. Sulfide had a low capacity to split the disulfide bonds of most proteins. Sulfide had, however, a pronounced effect on the complement component C3 in the form of C3bi. Sulfide released the C-terminal region of the alpha chain from C3bi. When C3 opsonizes bacteria, it is this region of C3bi which binds to complement receptor 3 (CR3) of the polymorphonuclear leukocytes. If sulfide has the same effect on C3bi deposited on the bacterial surface as it has on C3bi in solution, it will annihilate the very important contribution of C3bi to opsonization. Images PMID:1987085

  18. High temperature regenerable hydrogen sulfide removal agents

    DOEpatents

    Copeland, Robert J.

    1993-01-01

    A system for high temperature desulfurization of coal-derived gases using regenerable sorbents. One sorbent is stannic oxide (tin oxide, SnO.sub.2), the other sorbent is a metal oxide or mixed metal oxide such as zinc ferrite (ZnFe.sub.2 O.sub.4). Certain otherwise undesirable by-products, including hydrogen sulfide (H.sub.2 S) and sulfur dioxide (SO.sub.2) are reused by the system, and elemental sulfur is produced in the regeneration reaction. A system for refabricating the sorbent pellets is also described.

  19. Biogenic production of dimethyl sulfide: Krill grazing

    SciTech Connect

    Daly, K.L.; DiTullio, G.R. )

    1993-01-01

    Dimethyl sulfide (DMS), a dominant sulfur compound in sea water, is a possible precursor for cloud condensation nuclei in the atmosphere and may influence global climate. The primary source of DMS is phytoplankton, but the mechanisms remain uncertain, and concentrations of DMS in the ocean vary spatially and temporally. Laboratory studies suggest zooplankton grazing may be an important process leading to the formation of DMS in the ocean. This paper describes ocean studies which examine the suggestion that grazing by krill may be a significant source for DMS production in the antarctic coastal region. 11 refs., 2 figs.

  20. Hydrogen sulfide: physiological properties and therapeutic potential in ischaemia.

    PubMed

    Bos, Eelke M; van Goor, Harry; Joles, Jaap A; Whiteman, Matthew; Leuvenink, Henri G D

    2015-03-01

    Hydrogen sulfide (H2 S) has become a molecule of high interest in recent years, and it is now recognized as the third gasotransmitter in addition to nitric oxide and carbon monoxide. In this review, we discuss the recent literature on the physiology of endogenous and exogenous H2 S, focusing upon the protective effects of hydrogen sulfide in models of hypoxia and ischaemia.

  1. Normal state properties of the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Alterovitz, S. A.

    1978-01-01

    By making a large number of normal state and superconducting properties measurements, all on the same ternary molybdenum sulfide samples, we obtain values for Fermi surface and superconducting parameters. From these we conclude that sputtered ternary molybdenum sulfides are not completely in the dirty superconductor limit, and that they are d-band metals with a high electron carrier density.

  2. 46 CFR 148.285 - Metal sulfide concentrates.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 5 2011-10-01 2011-10-01 false Metal sulfide concentrates. 148.285 Section 148.285... MATERIALS THAT REQUIRE SPECIAL HANDLING Special Requirements for Certain Materials § 148.285 Metal sulfide concentrates. (a) When information given by the shipper under § 148.60 of this part indicates that the...

  3. 46 CFR 148.285 - Metal sulfide concentrates.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 5 2014-10-01 2014-10-01 false Metal sulfide concentrates. 148.285 Section 148.285... MATERIALS THAT REQUIRE SPECIAL HANDLING Special Requirements for Certain Materials § 148.285 Metal sulfide concentrates. (a) When information given by the shipper under § 148.60 of this part indicates that the...

  4. 46 CFR 148.285 - Metal sulfide concentrates.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 5 2013-10-01 2013-10-01 false Metal sulfide concentrates. 148.285 Section 148.285... MATERIALS THAT REQUIRE SPECIAL HANDLING Special Requirements for Certain Materials § 148.285 Metal sulfide concentrates. (a) When information given by the shipper under § 148.60 of this part indicates that the...

  5. Protection of steel from hydrogen sulfide corrosion by bactericides

    SciTech Connect

    Abbasov, V.M.; Mamedov, I.A.; Abdullaev, E.Sh.

    1995-03-01

    Modern effective inhibitors, Araz-1 and INFKh-4, are recommended for preventing the corrosion of oilfield equipment affected by hydrogen sulfide and sulfate-reducing bacteria. Both inhibitors have undergone full-scale field tests and have shown highly effective inhibition of corrosion in two-phase hydrocarbon-electrolyte media saturated with hydrogen sulfide.

  6. 21 CFR 872.1870 - Sulfide detection device.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Sulfide detection device. 872.1870 Section 872.1870 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Diagnostic Devices § 872.1870 Sulfide detection device. (a)...

  7. 40 CFR 721.5075 - Mixed methyltin mercaptoester sulfides.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed methyltin mercaptoester sulfides... Substances § 721.5075 Mixed methyltin mercaptoester sulfides. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance generically identified as mixed methyltin...

  8. Temperature-programmed sulfiding of precursor cobalt oxide genesis of highly active sites on sulfided cobalt catalyst for hydrogenation and isomerization

    SciTech Connect

    Inamura, Kazuhiro; Takyu, Toshiyuki ); Okamoto, Yasuaki; Nagata, Kozo; Imanaka, Toshinobu )

    1992-02-01

    It was found that the method of sulfidation of cobalt oxide strongly affects the catalytic activities and selectivities of the resultant cobalt sulfide catalyst, as well as the calcination temperature of the cobalt oxide. When cobalt oxide was sulfided at 673 K by a temperature-programmed sulfiding method (a heating rate of 6 K/min), catalytic activities for the hydrogenation of butadiene and the isomerization of 1-butene were considerably enhanced compared with those for cobalt sulfide prepared by isothermal sulfidation at 673 K. Results of temperature-programmed sulfiding (TPS), temperature-programmed reduction (TPR), and X-ray diffraction (XRD) suggest that the catalysts showing high catalytic activities after sulfidation are partially sulfided at 673 K and consist of the unsulfided cobalt core phases (CoO or metallic Co). The sulfidation property of precursor cobalt oxides has been studied using TPS, simulating the sulfidation process of the cobalt sulfide catalysts. Two distinctly different kinds of sulfidation process are estimated by TPS measurements of the cobalt oxides. The calcination temperature of the precursor cobalt oxides strongly affects the sulfidation paths. They are differentiated in terms of the presence of a metallic Co intermediate. The relationship of the mechanism of sulfidation of the cobalt oxides to the generation of highly active sites is discussed.

  9. Calculation of sulfide capacities of multicomponent slags

    NASA Astrophysics Data System (ADS)

    Pelton, Arthur D.; Eriksson, Gunnar; Romero-Serrano, Antonio

    1993-10-01

    The Reddy-Blander model for the sulfide capacities of slags has been modified for the case of acid slags and to include A12O3 and TiO2 as components. The model has been extended to calculate a priori sulfide capacities of multicomponent slags, from a knowledge of the thermodynamic activities of the component oxides, with no adjustable parameters. Agreement with measurements is obtained within experimental uncertainty for binary, ternary, and quinary slags involving the components SiO2-Al2O3-TiO2-CaO-MgO-FeO-MnO over wide ranges of composition. The oxide activities used in the computations are calculated from a database of model parameters obtained by optimizing thermodynamic and phase equilibrium data for oxide systems. Sulfur has now been included in this database. A computing system with automatic access to this and other databases has been developed to permit the calculation of the sulfur content of slags in multicomponent slag/metal/gas/solid equilibria.

  10. Effect of palladium on sulfide tarnishing of noble metal alloys.

    PubMed

    Suoninen, E; Herø, H; Minni, E

    1985-10-01

    Electron spectroscopic studies of Au-Ag-Cu alloys of the type used for dental castings show that small additions (less than or equal to 3 wt%) of palladium reduce essentially the thickness of the sulfide layer formed on surfaces of samples treated in aqueous Na2S solutions. Relative to silver, palladium does not enrich in the sulfide, but statistically significant enrichment is found immediately below the sulfide layer. This enrichment probably takes place during the exposure of the substrate surface to atmosphere before the sulfiding treatment. The mechanism of the impeding effect of palladium on sulfiding is assumed to be a decrease in diffusion from the bulk alloy to the surface due to the enriched layer. The effect cannot be explained by changes in the electronic structure of the alloy due to palladium alloying.

  11. Physical and microstructural aspects of iron sulfide degradation in concrete

    SciTech Connect

    Schmidt, Thomas; Gallucci, Emanuel; Scrivener, Karen

    2011-03-15

    The microstructural aspects of iron sulfide degradation in dam concrete were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) in both dam concrete samples and laboratory concrete. The results show that iron sulfide inclusions with a diameter of a few micrometers in the aggregates are reactive and appear to generate expansion first in the aggregates and consequently in the cement paste. The expansion from the iron sulfides is a consequence of the increase in volume of the reaction products formed. The types of iron sulfide present in the aggregate, mainly pyrrhotite (FeS) and pyrite (FeS{sub 2}), show similar reaction behavior in the aggregates. The released sulfate can lead to a secondary ettringite formation in the concrete matrix, but the degradation associated with this appears to be minor. The reaction of the iron sulfides was found to be very slow even when laboratory samples were exposed to elevated temperatures.

  12. The Hydrolysis of Carbonyl Sulfide at Low Temperature: A Review

    PubMed Central

    Zhao, Shunzheng; Yi, Honghong; Tang, Xiaolong; Jiang, Shanxue; Gao, Fengyu; Zhang, Bowen; Zuo, Yanran; Wang, Zhixiang

    2013-01-01

    Catalytic hydrolysis technology of carbonyl sulfide (COS) at low temperature was reviewed, including the development of catalysts, reaction kinetics, and reaction mechanism of COS hydrolysis. It was indicated that the catalysts are mainly involved metal oxide and activated carbon. The active ingredients which can load on COS hydrolysis catalyst include alkali metal, alkaline earth metal, transition metal oxides, rare earth metal oxides, mixed metal oxides, and nanometal oxides. The catalytic hydrolysis of COS is a first-order reaction with respect to carbonyl sulfide, while the reaction order of water changes as the reaction conditions change. The controlling steps are also different because the reaction conditions such as concentration of carbonyl sulfide, reaction temperature, water-air ratio, and reaction atmosphere are different. The hydrolysis of carbonyl sulfide is base-catalyzed reaction, and the force of the base site has an important effect on the hydrolysis of carbonyl sulfide. PMID:23956697

  13. Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

    NASA Astrophysics Data System (ADS)

    Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

    2012-06-01

    Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

  14. Luminal sulfide and large intestine mucosa: friend or foe?

    PubMed

    Blachier, François; Davila, Anne-Marie; Mimoun, Sabria; Benetti, Pierre-Henri; Atanasiu, Calina; Andriamihaja, Mireille; Benamouzig, Robert; Bouillaud, Frédéric; Tomé, Daniel

    2010-07-01

    Hydrogen sulfide (H(2)S) is present in the lumen of the human large intestine at millimolar concentrations. However, the concentration of free (unbound) sulfide is in the micromolar range due to a large capacity of fecal components to bind the sulfide. H(2)S can be produced by the intestinal microbiota from alimentary and endogenous sulfur-containing compounds including amino acids. At excessive concentration, H(2)S is known to severely inhibit cytochrome c oxidase, the terminal oxidase of the mitochondrial electron transport chain, and thus mitochondrial oxygen (O(2)) consumption. However, the concept that sulfide is simply a metabolic troublemaker toward colonic epithelial cells has been challenged by the discovery that micromolar concentration of H(2)S is able to increase the cell respiration and to energize mitochondria allowing these cells to detoxify and to recover energy from luminal sulfide. The main product of H(2)S metabolism by the colonic mucosa is thiosulfate. The enzymatic activities involved in sulfide oxidation by the colonic epithelial cells appear to be sulfide quinone oxidoreductase considered as the first and rate-limiting step followed presumably by the action of sulfur dioxygenase and rhodanese. From clinical studies with human volunteers and experimental works with rodents, it appears that H(2)S can exert mostly pro- but also anti-inflammatory effects on the colonic mucosa. From the available data, it is tempting to propose that imbalance between the luminal concentration of free sulfide and the capacity of colonic epithelial cells to metabolize this compound will result in an impairment of the colonic epithelial cell O(2) consumption with consequences on the process of mucosal inflammation. In addition, endogenously produced sulfide is emerging as a prosecretory neuromodulator and as a relaxant agent toward the intestinal contractibility. Lastly, sulfide has been recently described as an agent involved in nociception in the large intestine

  15. Measurement and biological significance of the volatile sulfur compounds hydrogen sulfide, methanethiol and dimethyl sulfide in various biological matrices.

    PubMed

    Tangerman, Albert

    2009-10-15

    This review deals with the measurement of the volatile sulfur compounds hydrogen sulfide, methanethiol and dimethyl sulfide in various biological matrices of rats and humans (blood, serum, tissues, urine, breath, feces and flatus). Hydrogen sulfide and methanethiol both contain the active thiol (-SH) group and appear in the free gaseous form, in the acid-labile form and in the dithiothreitol-labile form. Dimethyl sulfide is a neutral molecule and exists only in the free form. The foul odor of these sulfur volatiles is a striking characteristic and plays a major role in bad breath, feces and flatus. Because sulfur is a biologically active element, the biological significance of the sulfur volatiles are also highlighted. Despite its highly toxic properties, hydrogen sulfide has been lately recommended to become the third gasotransmitter, next to nitric oxide and carbon monoxide, based on high concentration found in healthy tissues, such as blood and brain. However, there is much doubt about the reliability of the assay methods used. Many artifacts in the sulfide assays exist. The methods to detect the various forms of hydrogen sulfide are critically reviewed and compared with findings of our group. Recent findings that free gaseous hydrogen sulfide is absent in whole blood urged the need to revisit its role as a blood-borne signaling molecule.

  16. DISSOLUTION OF PLUTONIUM CONTAINING CARRIER PRECIPITATE BY CARBONATE METATHESIS AND SEPARATION OF SULFIDE IMPURITIES THEREFROM BY SULFIDE PRECIPITATION

    DOEpatents

    Duffield, R.B.

    1959-07-14

    A process is described for recovering plutonium from foreign products wherein a carrier precipitate of lanthanum fluoride containing plutonium is obtained and includes the steps of dissolving the carrier precipitate in an alkali metal carbonate solution, adding a soluble sulfide, separating the sulfide precipitate, adding an alkali metal hydroxide, separating the resulting precipitate, washing, and dissolving in a strong acid.

  17. Anomalous small angle x-ray scattering studies of amorphous metal-germanium alloys

    SciTech Connect

    Rice, M.

    1993-12-01

    This dissertation addresses the issue of composition modulation in sputtered amorphous metal-germanium thin films with the aim of understanding the intermediate range structure of these films as a function of composition. The investigative tool used in this work is anomalous small-angle X-ray scattering (ASAXS). The primary focus of this investigation is the amorphous iron-germanium (a-Fe{sub x}Ge{sub 100-x}) system with particular emphasis on the semiconductor-rich regime. Brief excursions are made into the amorphous tungsten-germanium (a-W{sub x}Ge{sub 100-x}) and the amorphous molybdenum-germanium (a-Mo{sub x}Ge{sub 100-x}) systems. All three systems exhibit an amorphous structure over a broad composition range extending from pure amorphous germanium to approximately 70 atomic percent metal when prepared as sputtered films. Across this composition range the structures change from the open, covalently bonded, tetrahedral network of pure a-Ge to densely packed metals. The structural changes are accompanied by a semiconductor-metal transition in all three systems as well as a ferromagnetic transition in the a-Fe{sub x}Ge{sub 100-x} system and a superconducting transition in the a-Mo{sub x}Ge{sub 100-x} system. A long standing question, particularly in the a-Fe{sub x}Ge{sub 100-x} and the a-Mo{sub x}Ge{sub 100-x} systems, has been whether the structural changes (and therefore the accompanying electrical and magnetic transitions) are accomplished by homogeneous alloy formation or phase separation. The application of ASAXS to this problem proves unambiguously that fine scale composition modulations, as distinct from the simple density fluctuations that arise from cracks and voids, are present in the a-Fe{sub x}Ge{sub 100-x}, a-W{sub x}Ge{sub 100-x}, and a-Mo{sub x}Ge{sub 100-x} systems in the semiconductor-metal transition region. Furthermore, ASAXS shows that germanium is distributed uniformly throughout each sample in the x<25 regime of all three systems.

  18. Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hwang, Sung-Bo

    Rapid thermal chemical vapor deposition (RTCVD) is an emerging technology to utilize low thermal budgets required to grow silicon-germanium alloys in a coherent way. However, the current state-of-the-art in RTCVD technique lacks some key elements required for acceptance of RTCVD in mainstream IC fabrication. These shortcomings include adequate control of wafer temperature during processing, and sufficient understanding of the growth kinetics. This dissertation describes and discusses the temperature control in RTCVD, the growth, and characterization of silicon-germanium alloys. The RTCVD system provides very reliable temperature-measurements, for a range of 480˜820°C, based on infrared-light (1.3 or 1.55mum) absorption in the silicon wafer during the growth of silicon-germanium alloys. A wafer heat transfer model developed using the view-factor analysis is used to investigate temperature distributions with respect to lamp configurations in RTCVD system. For a precise temperature control, a neural model-based controller in single-input-single-output (SISO) system is proposed, and compared with other controllers. Silicon-germanium alloys, in various semiconductor structures including dots, have been grown by RTCVD where temperature is well-controlled by the model-based controller. The structural and chemical properties of silicon-germanium alloys are characterized by X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The different growth characteristics dominated by a silicon-source gas are exploited, and their process models are developed with the experimental data utilizing neural networks employed the Bayesian framework to accurately describe the process behaviors such as growth rate and Ge fraction in alloys with respect to process variables (to capture the process nonlinearity). By controlling growth rate and Ge fraction, a uniform and a grading Ge profile in silicon-germanium

  19. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    NASA Astrophysics Data System (ADS)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  20. Amorphous molybdenum sulfides as hydrogen evolution catalysts.

    PubMed

    Morales-Guio, Carlos G; Hu, Xile

    2014-08-19

    Providing energy for a population projected to reach 9 billion people within the middle of this century is one of the most pressing societal issues. Burning fossil fuels at a rate and scale that satisfy our near-term demand will irreversibly damage the living environment. Among the various sources of alternative and CO2-emission-free energies, the sun is the only source that is capable of providing enough energy for the whole world. Sunlight energy, however, is intermittent and requires an efficient storage mechanism. Sunlight-driven water splitting to make hydrogen is widely considered as one of the most attractive methods for solar energy storage. Water splitting needs a hydrogen evolution catalyst to accelerate the rate of hydrogen production and to lower the energy loss in this process. Precious metals such as Pt are superior catalysts, but they are too expensive and scarce for large-scale applications. In this Account, we summarize our recent research on the preparation, characterization, and application of amorphous molybdenum sulfide catalysts for the hydrogen evolution reaction. The catalysts can be synthesized by electrochemical deposition under ambient conditions from readily available and inexpensive precursors. The catalytic activity is among the highest for nonprecious catalysts. For example, at a loading of 0.2 mg/cm(2), the optimal catalyst delivers a current density of 10 mA/cm(2) at an overpotential of 160 mV. The growth mechanism of the electrochemically deposited film catalysts was revealed by an electrochemical quartz microcrystal balance study. While different electrochemical deposition methods produce films with different initial compositions, the active catalysts are the same and are identified as a "MoS(2+x)" species. The activity of the film catalysts can be further promoted by divalent Fe, Co, and Ni ions, and the origins of the promotional effects have been probed. Highly active amorphous molybdenum sulfide particles can also be prepared