Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers

NASA Astrophysics Data System (ADS)

Becker, C.; Ruske, F.; Sontheimer, T.; Gorka, B.; Bloeck, U.; Gall, S.; Rech, B.

2009-10-01

Polycrystalline silicon (poly-Si) thin films have been prepared by electron-beam evaporation and thermal annealing for the development of thin-film solar cells on glass coated with ZnO:Al as a transparent, conductive layer. The poly-Si microstructure and photovoltaic performance were investigated as functions of the deposition temperature by Raman spectroscopy, scanning and transmission electron microscopies including defect analysis, x-ray diffraction, external quantum efficiency, and open circuit measurements. It is found that two temperature regimes can be distinguished: Poly-Si films fabricated by deposition at low temperatures (Tdep<400 °C) and a subsequent thermal solid phase crystallization step exhibit 1-3 μm large, randomly oriented grains, but a quite poor photovoltaic performance. However, silicon films deposited at higher temperatures (Tdep>400 °C) directly in crystalline phase reveal columnar, up to 300 nm big crystals with a strong ⟨110⟩ orientation and much better solar cell parameters. It can be concluded from the results that the electrical quality of the material, reflected by the open circuit voltage of the solar cell, only marginally depends on crystal size and shape but rather on the intragrain properties of the material. The carrier collection, described by the short circuit current of the cell, seems to be positively influenced by preferential ⟨110⟩ orientation of the grains. The correlation between experimental, microstructural, and photovoltaic parameters will be discussed in detail.

Investigation of laser-fired point contacts on KOH structured laser-crystallized silicon by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Gref, Orman; Weizman, Moshe; Rhein, Holger; Gabriel, Onno; Gernert, Ulrich; Schlatmann, Rutger; Boit, Christian; Friedrich, Felice

2016-06-01

A conductive atomic force microscope is used to study the local topography and conductivity of laser-fired aluminum contacts on KOH-structured multicrystalline silicon surfaces. A significant increase in conductivity is observed in the laser-affected area. The area size and spatial uniformity of this enhanced conductivity depends on the laser energy fluence. The laser-affected area shows three ring-shaped regimes of different conductance depending on the local aluminum and oxygen concentration. Finally, it was found that the topographic surface structure determined by the silicon grain orientation does not significantly affect the laser-firing process.

Influence of substrate microcrystallinity on the orientation of laser-induced periodic surface structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nürnberger, P.; Reinhardt, H.; Kim, H-C.

2015-10-07

The research in this paper deals with the angular dependence of the formation of laser-induced periodic surface structures (LIPSS) by linearly polarized nanosecond laser pulses on polycrystalline austenitic stainless steel. Incident angles ranging from 45° to 70° lead to the generation of superimposed merely perpendicular oriented LIPSS on steel as well as on monocrystalline (100) silicon which was used as a reference material. Additional extraordinary orientations of superimposing LIPSS along with significantly different periodicities are found on polycrystalline steel but not on (100) silicon. Electron backscatter diffraction measurements indicate that the expansion of these LIPSS is limited to the grainmore » size and affected by the crystal orientation of the individual grains. Atomic force microscopy imaging shows that LIPSS fringe heights are in good agreement with the theoretically predicted penetration depths of surface plasmon polaritons into stainless steel. These results indicate that optical anisotropies must be taken into account to fully describe the theory of light-matter interaction leading to LIPSS formation.« less

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Vernon, S. M.

1982-01-01

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

Molecular dynamic simulations of the intergranular films between alumina and silicon nitride crystal grains

NASA Astrophysics Data System (ADS)

Zhang, Shenghong

The intergranular films (IGFs) between the ceramics grains have very important effects on the structure and mechanical properties on the whole ceramics and have been studied for many decades. In the thesis, molecular dynamic (MD) computer simulations were applied to study the IGFs between the alumina and silicon nitride ceramic grains. Preferential adsorption of specific ions from the IGFs to the contacting surfaces of the alumina crystals was observed in the study of calcium-alumino-silicate glassy (CAS) IGFs formed between the combined basal and prism orientations of alpha-Al2O3 crystals. This segregation of specific ions to the interface enables formation of localized, ordered structures between the IGF and the crystals. However, the segregation behavior of the ions is anisotropic, depending on the orientation of the alpha-Al2O 3 crystals. Self-diffusion of calcium ions between these CAS IGFs was also carried out by MD simulations. The results show that the diffusion coefficients adjacent to the interfaces are smaller and the activation energies are much higher than those in the interior of the IGF and in bulk glasses. It was also suggested that Ca transport is mainly though the interior of the IGF and implies that diffusion would be significantly inhibited by sufficiently thin IGFs. The growth of the alumina ceramic grains was simulated in the contacting with IGFs containing high concentrations of aluminum ions. Five different compositions in the IGFs were studied. Results show preferential growth along the [1120] of the (1120) surface in comparison to growth along the [0001] direction on the (0001) surface for compositions near a Ca/Al ratio of 0.5. The simulations also show the mechanism by which Ca ions in the IGF inhibit growth on the basal surface. The simulations provide an atomistic view of attachment onto crystal surfaces, affecting grain growth in alumina. The dissolution of the alumina crystal grains in the silicate melts is another important issue in the application of alumina ceramics. The simulations results showed that alumina grains dissolved into the melts homogeneously at very high temperatures. The orientation of the crystals and the compositions of the melts only take effect at some intermediate temperatures, to make the alumina grains dissolution anisotropic. The fracture phenomena of the pure silica IGFs between the basal silicon nitride crystals were studied by applying the constant tensile strain on the simulated IGF system, as well as for the bulk silica glass for the comparison. The data indicated that the fracture was happened in the interior of the IGFs and the thickness of the IGFs has important effect on the fracture stress/strain relationships.

Effect of the temperature and dew point of the decarburization process on the oxide subscale of a 3% silicon steel

NASA Astrophysics Data System (ADS)

Cesar, Maria das Graças M. M.; Mantel, Marc J.

2003-01-01

The oxide subscale formed on the decarburization annealing of 3% Si-Fe was investigated using microscopy and spectroscopy techniques. It was found that the morphology as well as the molecular structure of the subscale are affected by temperature and dew point. The results suggest that there is an optimum level of internal oxidation and an optimum fayalite/silica ratio in the subscale to achieve a oriented grain silicon steel having a continuous and smooth ceramic film and low core loss.

Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

NASA Technical Reports Server (NTRS)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

Etude de la texture des rubans EPR de silicium polycristallin photovoltaïque

NASA Astrophysics Data System (ADS)

Chibani, A.; Gauthier, R.; Pinard, P.; Andonov, P.

1991-09-01

EPR polysilicon ribbons are obtained from a 5N-6N purity grade silicon powder melting followed by a recrystallization step. Being assigned to the photocell manufacture, we study the texture by X-ray diffraction method to reveal the majority of the crystal orientations and prove the eventual existence of specific orientations adapted to the best photovoltaic conversion efficiencies such as (100), (110) or (111). Moreover, we tested the possibility to induce the (111) orientation with a monocrystalline seed having this orientation. It appears that the crystal growth is essentially anisotropic and that only the orientation of the grains with their (331) planes parallel to the ribbon surface may be considered as dominant after the recrystallization step; finally, the (111) starting seed has an effect only at the recrystallization onset.

Magnetic losses reduction in grain oriented silicon steel by pulse and continuous fiber laser processing

NASA Astrophysics Data System (ADS)

Petryshynets, Ivan; Kováč, František; Puchý, Viktor; Šebek, Martin; Füzer, Ján; Kollár, Peter

2018-04-01

The present paper shows the impact of different laser scribing conditions on possible reduction of magnetic losses in grain oriented electrical steel sheets. The experimental Fe-3%Si steel was taken from industrial line after final box annealing. The surface of investigated steel was subjected to fiber laser processing using both pulse and continuous scribing regimes in order to generate residual thermal stresses inducing the magnetic domains structure refinement. The magnetic losses of experimental samples before and after individual laser scribing regimes were tested in AC magnetic field with 50Hz frequency and induction of 1.5T. The most significant magnetic losses reduction of 38% was obtained at optimized conditions of continuous laser scribing regime. A semi quantitative relationship has been found between the domain patterns and the used fiber laser processing.

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

NASA Astrophysics Data System (ADS)

Ohdaira, Keisuke; Matsumura, Hideki

2013-01-01

We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si films prepared by electron-beam (EB) evaporation. The velocity of the explosive crystallization (vEC) is estimated to be ˜14 m/s, which is close to the velocity of the liquid-phase epitaxy (LPE) of Si at a temperature around the melting point of a-Si of 1418 K. Poly-Si films formed have micrometer-order-long grains stretched along a lateral crystallization direction, and X-ray diffraction (XRD) and electron diffraction pattern measurements reveal that grains in poly-Si films tend to have a particular orientation. These features are significantly different from our previous results: the formation of poly-Si films containing randomly-oriented 10-nm-sized fine grains formed from a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) or sputtering. One possible reason for the emergence of a different EC mode in EB-evaporated a-Si films is the suppression of solid-phase nucleation (SPN) during Flash Lamp Annealing (FLA) due to tensile stress which precursor a-Si films originally hold. Poly-Si films formed from EB-evaporated a-Si films would contribute to the realization of high-efficiency thin-film poly-Si solar cells because of large and oriented grains.

The structure of 110 tilt boundaries in large area solar silicon

NASA Technical Reports Server (NTRS)

Ast, D. G.; Cunningham, B.; Vaudin, M.

1982-01-01

The models of Hornstra and their connection to the repeating group description of grain boundaries (7-10) are discussed. A model for the Sigma = 27 boundary containing a zig-zag arrangement of dislocations is constructed and it is shown that zig-zag models can account for the contrast features observed in high resolution transmission electron micrographs of second and third order twin boundaries in silicon. The boundaries discussed are symmetric with a 110 tilt axis and a (110) boundary plane in the median lattice (the median plane). The median lattice is identical in structure and halfway in orientation between the crystal lattices either side of the boundary.

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI-two types of X grains

NASA Astrophysics Data System (ADS)

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.; Pellin, Michael J.; Rost, Detlef; Savina, Michael R.; Jadhav, Manavi; Kelly, Christopher H.; Gyngard, Frank; Hoppe, Peter; Dauphas, Nicolas

2018-01-01

We used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grains was fortuitous, because only ∼1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. While one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hieu T.; Jensen, Mallory A.; Li, Li

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active sub-grain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) have distinctly different spatial distributions, and are asymmetric across the sub-grain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially-resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm thatmore » high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the sub-grain boundaries is due to their inclination below the wafer surface. Based on the luminescence asymmetries, the sub-grain boundaries are shown to share a common inclination locally, rather than be orientated randomly.« less

Controlling the opto-electronic properties of nc-SiOx:H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Samanta, Subhashis

2018-01-01

A systematic development of undoped nc-SiOx:H thin films from (SiH4 + CO2) plasma diluted by a combination of H2 and He has been investigated through structural, optical and electrical characterization and correlation. Gradual inclusion of O into a highly crystalline silicon network progressively produces a two-phase structure where Si-nanocrystals (Si-nc) are embedded into the a-SiOx:H matrix. However, at the intermediate grain boundary region the growth of ultra-nanocrystallites controls the effectiveness of the material. The ultra-nanocrystallites are the part and portion of crystallinity accommodating the dominant fraction of thermodynamically preferred 〈220〉 crystallographic orientation, most favourable for stacked layer device performance. Atomic H plays a dominant role in maintaining an improved nanocrystalliny in the network even during O inclusion, while He in its excited state (He*) maintains a good energy balance at the grain boundary and produces a significant fraction of ultra-nanocrystalline component which has been demonstrated to organize the energetically favourable 〈220〉 crystallographic orientation in the network. The nc-SiOx:H films, maintaining proportionally good electrical conductivity over an wide range of optical band gap, remarkably low microstructure factor and simultaneous high crystalline volume fraction dominantly populated by ultra-nanocrystallites of 〈220〉 crystallographic orientation mostly at the grain boundary, have been obtained in technologically most popular 13.56 MHz PECVD SiH4 plasma even at a low substrate temperature ∼250 °C, convenient for device fabrication.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meisner, L. L., E-mail: llm@ispms.tsc.ru; Meisner, S. N., E-mail: msn@ispms.tsc.ru; Poletika, T. M., E-mail: poletm@ispms.tsc.ru

Using the EBSD, SEM and TEM methods, the structure of surface layer of polycrystalline NiTi alloy samples was examined after the modification of material surface by the pulsed action of mean-energy silicon ion beam. It was found that the ion beam treatment would cause grain fragmentation of the near-surface layer to a depth 5÷50 μm; a higher extent of fragmentation was observed in grains whose close-packed planes were oriented approximately in the same direction as the ion beam was. The effect of high-intensity ion beam treatment on the anisotropic behavior of polycrystalline NiTi alloy and the mechanisms involved were alsomore » examined.« less

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI—two types of X grains

DOE PAGES

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.; ...

2017-05-10

Here, we used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grainsmore » was fortuitous, because only ~1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. And while one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.« less

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI—two types of X grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.

Here, we used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grainsmore » was fortuitous, because only ~1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. And while one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.« less

Physics of Shock Compression and Release: NEMD Simulations of Tantalum and Silicon

NASA Astrophysics Data System (ADS)

Hahn, Eric; Meyers, Marc; Zhao, Shiteng; Remington, Bruce; Bringa, Eduardo; Germann, Tim; Ravelo, Ramon; Hammerberg, James

2015-06-01

Shock compression and release allow us to evaluate physical deformation and damage mechanisms occurring in extreme environments. SPaSM and LAMMPS molecular dynamics codes were employed to simulate single and polycrystalline tantalum and silicon at strain rates above 108 s-1. Visualization and analysis was accomplished using OVITO, Crystal Analysis Tool, and a redesigned orientation imaging function implemented into SPaSM. A comparison between interatomic potentials for both Si and Ta (as pertaining to shock conditions) is conducted and the influence on phase transformation and plastic relaxation is discussed. Partial dislocations, shear induced disordering, and metastable phase changes are observed in compressed silicon. For tantalum, the role of grain boundary and twin intersections are evaluated for their role in ductile spallation. Finally, the temperature dependent response of both Ta and Si is investigated.

Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells

NASA Astrophysics Data System (ADS)

Arafune, Koji; Ohishi, Eichiro; Sai, Hitoshi; Terada, Yasuko; Ohshita, Yoshio; Yamaguchi, Masafumi

2006-08-01

To clarify the role of grain boundaries in iron sinks and carrier recombination centers, iron distributions and their chemical states were studied before and after gettering. They were measured by the X-ray microprobe fluorescence and the X-ray absorption in the near-edge structure using the beamline 37XU at the SPring-8 third-generation synchrotron facility. To determine the crystallographic orientation of the grain boundaries, electron backscatter diffraction measurements were performed. The distribution of electric active defects was characterized by electron-beam-induced current measurements. Before gettering, the iron was distributed in the small grain and its chemical state was similar to that of iron oxide. After gettering, the iron was redistributed along the small angle grain boundary, and its chemical state was similar to the iron silicide complexed with the iron oxide. Regarding the electrical activity, high carrier recombination was observed along the small-angle grain boundary. On the contrary, Σ 3 grain boundaries were relatively weak impurity sinks and showed low recombination activity.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Polycrystalline silicon semiconducting material by nuclear transmutation doping

DOEpatents

Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

1978-01-01

A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

SILICON CARBIDE GRAIN BOUNDARY DISTRIBUTIONS, IRRADIATION CONDITIONS, AND SILVER RETENTION IN IRRADIATED AGR-1 TRISO FUEL PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lillo, T. M.; Rooyen, I. J.; Aguiar, J. A.

Precession electron diffraction in the transmission electron microscope was used to map grain orientation and ultimately determine grain boundary misorientation angle distributions, relative fractions of grain boundary types (random high angle, low angle or coincident site lattice (CSL)-related boundaries) and the distributions of CSL-related grain boundaries in the SiC layer of irradiated TRISO-coated fuel particles. Two particles from the AGR-1 experiment exhibiting high Ag-110m retention (>80%) were compared to a particle exhibiting low Ag-110m retention (<19%). Irradiated particles with high Ag-110m retention exhibited a lower fraction of random, high angle grain boundaries compared to the low Ag-110m retention particle. Anmore » inverse relationship between the random, high angle grain boundary fraction and Ag-110m retention is found and is consistent with grain boundary percolation theory. Also, comparison of the grain boundary distributions with previously reported unirradiated grain boundary distributions, based on SEM-based EBSD for similarly fabricated particles, showed only small differences, i.e. a greater low angle grain boundary fraction in unirradiated SiC. It was, thus, concluded that SiC layers with grain boundary distributions susceptible to Ag-110m release were present prior to irradiation. Finally, irradiation parameters were found to have little effect on the association of fission product precipitates with specific grain boundary types.« less

Fingerprints of carbon, nitrogen, and silicon isotopes in small interstellar SiC grains from the Murchison meteorite

NASA Technical Reports Server (NTRS)

Hoppe, Peter; Geiss, Johannes; Buehler, Fritz; Neuenschwander, Juerg; Amari, Sachiko; Lewis, Roy S.

1993-01-01

We report ion microprobe determinations of the carbon, nitrogen, and silicon isotopic compositions of small SiC grains from the Murchison CM2 chondrite. Analyses were made on samples containing variable numbers of grains and on 14 individual grains. In some cases the multiple-grain sample compositions were probably dominated by only one or two grains. Total ranges observed are given. Only a few grains show values near the range limits. Both the total ranges of carbon and nitrogen isotopic compositions, and even the narrower ranges typical for the majority of the grains, are similar to those observed for larger SiC grains. Two rare components appear to be present in the smaller-size fraction, one characterized by C-12/C-13 about 12-16 and the other by very heavy nitrogen. The carbon and nitrogen isotopic compositions qualitatively may reflect hydrostatic H-burning via the CNO cycle and He-burning in red giants, as well as explosive H-burning in novae. The silicon isotopic compositions of most grains qualitatively show what is the signature of He-burning. The silicon isotopic composition of one grain, however, suggests a different process.

Effect of microstructure on the corrosion of CVD-SiC exposed to supercritical water

NASA Astrophysics Data System (ADS)

Tan, L.; Allen, T. R.; Barringer, E.

2009-10-01

Silicon carbide (SiC) is an important engineering material being studied for potential use in multiple nuclear energy systems including high-temperature gas-cooled reactors and water-cooled reactors. The corrosion behavior of SiC exposed to supercritical water (SCW) is critical for examining its applications in nuclear reactors. Although the hydrothermal corrosion of SiC has been the subject of many investigations, the study on the microstructural effects on the corrosion is limited. This paper presents the effect of residual strain, grain size, grain boundary types, and surface orientations on the corrosion of chemical vapor deposited (CVD) β-SiC exposed to SCW at 500 °C and 25 MPa. Weight loss occurred on all the samples due to localized corrosion. Residual strains associated with small grains showed the most significant effect on the corrosion compared to the other factors.

Numerical Simulation of Polysilicon Solid-liquid Interface Transmogrification in Heat Transfer Process

NASA Astrophysics Data System (ADS)

Yang, Xi; Ma, Wenhui; Lv, Guoqiang; Zhang, Mingyu

2018-01-01

The shape of solid-liquid interface during the directional solidification process, which is difficult to be observed and measured in actual processes, controls the grain orientation and grain size of polysilicon ingot. We carried out numerical calculations of the directional solidification progress of polycrystalline silicon and invested the means to deal with the latent heat of solidification in numerical simulation. The distributions of the temperature field of the melt for the crystallization progress as well as the transformation of the solid-liquid interface were obtained. The simulation results are consistent with the experimental outcomes. The results show that the curvature of solid-liquid interface is small and stability, larger grain sized columnar crystal can be grown in the laboratory-scale furnace at a solidification rate of 10 μm•s-1. It shall provide important theoretical basis for metallurgical process and polysilicon production technology.

X-ray μ-Laue diffraction analysis of Cu through-silicon vias: A two-dimensional and three-dimensional study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanchez, Dario Ferreira; Weleguela, Monica Larissa Djomeni; Audoit, Guillaume

2014-10-28

Here, white X-ray μ-beam Laue diffraction is developed and applied to investigate elastic strain distributions in three-dimensional (3D) materials, more specifically, for the study of strain in Cu 10 μm diameter–80 μm deep through-silicon vias (TSVs). Two different approaches have been applied: (i) two-dimensional μ-Laue scanning and (ii) μ-beam Laue tomography. 2D μ-Laue scans provided the maps of the deviatoric strain tensor integrated along the via length over an array of TSVs in a 100 μm thick sample prepared by Focused Ion Beam. The μ-beam Laue tomography analysis enabled to obtain the 3D grain and elemental distribution of both Cu and Si. Themore » position, size (about 3 μm), shape, and orientation of Cu grains were obtained. Radial profiles of the equivalent deviatoric strain around the TSVs have been derived through both approaches. The results from both methods are compared and discussed.« less

Silicon nitride ceramic having high fatigue life and high toughness

DOEpatents

Yeckley, Russell L.

1996-01-01

A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

NASA Astrophysics Data System (ADS)

McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

2018-03-01

Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon <100 > by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of <001 > (010)VO2||<11 ¯00 > (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

NASA Astrophysics Data System (ADS)

Mondal, Praloy; Das, Debajyoti

2017-07-01

Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

PubMed

Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

2018-09-01

In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

Abnormal grain growth in iron-silicon

NASA Astrophysics Data System (ADS)

Bennett, Tricia A.

Abnormal grain growth (AGG) was studied in an Fe-1%Si alloy using automated Electron Backscattered Diffraction (EBSD) to determine the driving force for this phenomenon. Experiments were performed with the knowledge that there are several possible driving forces and, the intent to determine the true driving force by elimination of the other potential candidates. These potential candidates include surface energy anisotropy, anisotropic grain boundary properties and the stored energy of deformation. In this work, surface energy and grain boundary anisotropies as well as the stored energy of deformation were investigated as the possible driving forces for AGG. Accordingly, industrially processed samples that were temper rolled to 1.5% and 8% were annealed in air for various times followed by quenching in water. The results obtained were compared to those from heat treatments performed in wet 15%H2-85%N2 at a US Steel facility. In addition, for a more complete study of the effect of surface energy anisotropies on AGG, the 1.5% temper-rolled material was heat-treated in other atmospheres such as 5%H2-95%Ar, 98%H2-2%He, 98%H2-2%H 2S, and 98%H2-2%N2 for 1 hour followed by quenching in water. The character of the grain boundaries in the materials was also examined for each set of experiments conducted, while the influence of stored energy was evaluated by examining intragranular orientation gradients. AGG occurred regardless of annealing atmosphere though the most rapid progression was observed in samples annealed in air. In general, grains of varying orientations grew abnormally. One consistently observed trend in all the detailed studies was that the matrix grains remained essentially static and either did not grow or only grew very slowly. On the other hand, the abnormally large grains (ALG), on average, were approximately 10 times the size of the matrix. Analysis of the grain boundary character of the interfaces between abnormal grains and the matrix showed no significant variation from the overall population of boundaries. This suggested that grain boundary character was not a factor in controlling AGG. When the effect of stored energy differences was considered, it was observed that grains that experienced AGG had low orientation gradients. Based on these results and cross comparison of all classes of experiments performed, it was determined that stored energy differences were the main driving force for AGG in this Fe-1%Si alloy.

Simultaneous iron and nickel isotopic analyses of presolar silicon carbide grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trappitsch, Reto; Stephan, Thomas; Savina, Michael R.

Aside from recording stellar nucleosynthesis, a few elements in presolar grains can also provide insights into the galactic chemical evolution (GCE) of nuclides. We have studied the carbon, silicon, iron, and nickel isotopic compositions of presolar silicon carbide (SiC) grains from asymptotic giant branch (AGB) stars to better understand GCE. Since only the neutron-rich nuclides in these grains have been heavily in uenced by the parent star, the neutron-poor nuclides serve as GCE proxies. Using CHILI, a new resonance ionization mass spectrometry (RIMS) instrument, we measured 74 presolar SiC grains for all iron and nickel isotopes. With the CHARISMA instrument,more » 13 presolar SiC grains were analyzed for iron isotopes. All grains were also measured by NanoSIMS for their carbon and silicon isotopic compositions. A comparison of the measured neutron-rich isotopes with models for AGB star nucleosynthesis shows that our measurements are consistent with AGB star predictions for low-mass stars between half-solar and solar metallicity. Furthermore, our measurements give an indication on the 22Ne( ,n) 25Mg reaction rate. In terms of GCE, we nd that the GCE-dominated iron and nickel isotope ratios, 54Fe/56Fe and 60Ni/ 58Ni, correlate with their GCE-dominated counterpart in silicon, 29Si/ 28Si. The measured GCE trends include the Solar System composition, showing that the Solar System is not a special case. However, as seen in silicon and titanium, many presolar SiC grains are more evolved for iron and nickel than the Solar System. This con rms prior ndings and agrees with observations of large stellar samples that a simple age-metallicity relationship for GCE cannot explain the composition of the solar neighborhood.« less

Simultaneous iron and nickel isotopic analyses of presolar silicon carbide grains

DOE PAGES

Trappitsch, Reto; Stephan, Thomas; Savina, Michael R.; ...

2018-01-01

Aside from recording stellar nucleosynthesis, a few elements in presolar grains can also provide insights into the galactic chemical evolution (GCE) of nuclides. We have studied the carbon, silicon, iron, and nickel isotopic compositions of presolar silicon carbide (SiC) grains from asymptotic giant branch (AGB) stars to better understand GCE. Since only the neutron-rich nuclides in these grains have been heavily in uenced by the parent star, the neutron-poor nuclides serve as GCE proxies. Using CHILI, a new resonance ionization mass spectrometry (RIMS) instrument, we measured 74 presolar SiC grains for all iron and nickel isotopes. With the CHARISMA instrument,more » 13 presolar SiC grains were analyzed for iron isotopes. All grains were also measured by NanoSIMS for their carbon and silicon isotopic compositions. A comparison of the measured neutron-rich isotopes with models for AGB star nucleosynthesis shows that our measurements are consistent with AGB star predictions for low-mass stars between half-solar and solar metallicity. Furthermore, our measurements give an indication on the 22Ne( ,n) 25Mg reaction rate. In terms of GCE, we nd that the GCE-dominated iron and nickel isotope ratios, 54Fe/56Fe and 60Ni/ 58Ni, correlate with their GCE-dominated counterpart in silicon, 29Si/ 28Si. The measured GCE trends include the Solar System composition, showing that the Solar System is not a special case. However, as seen in silicon and titanium, many presolar SiC grains are more evolved for iron and nickel than the Solar System. This con rms prior ndings and agrees with observations of large stellar samples that a simple age-metallicity relationship for GCE cannot explain the composition of the solar neighborhood.« less

Process Research On Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.; Wohlgemuth, J. H.

1982-01-01

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth

2014-01-01

Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallizationmore » behavior was correlated with dislocation slip activities.« less

Textured silicon nitride: processing and anisotropic properties

PubMed Central

Zhu, Xinwen; Sakka, Yoshio

2008-01-01

Textured silicon nitride (Si3N4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured α-Sialon using the same methods as those used for textured β-Si3N4 and β-Sialon. PMID:27877995

The Role of Grain Orientation and Grain Boundary Characteristics in the Mechanical Twinning Formation in a High Manganese Twinning-Induced Plasticity Steel

NASA Astrophysics Data System (ADS)

Shterner, Vadim; Timokhina, Ilana B.; Rollett, Anthony D.; Beladi, Hossein

2018-04-01

In the current study, the dependence of mechanical twinning on grain orientation and grain boundary characteristics was investigated using quasi in-situ tensile testing. The grains of three main orientations (i.e., <111>, <110>, and <100> parallel to the tensile axis (TA)) and certain characteristics of grain boundaries (i.e., the misorientation angle and the inclination angle between the grain boundary plane normal and the TA) were examined. Among the different orientations, <111> and <100> were the most and the least favored orientations for the formation of mechanical twins, respectively. The <110> orientation was intermediate for twinning. The annealing twin boundaries appeared to be the most favorable grain boundaries for the nucleation of mechanical twinning. No dependence was found for the inclination angle of annealing twin boundaries, but the orientation of grains on either side of the annealing twin boundary exhibited a pronounced effect on the propensity for mechanical twinning. Annealing twin boundaries adjacent to high Taylor factor grains exhibited a pronounced tendency for twinning regardless of their inclination angle. In general, grain orientation has a significant influence on twinning on a specific grain boundary.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

NASA Astrophysics Data System (ADS)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Sub-grain induced crack deviation in multi-crystalline silicon

NASA Astrophysics Data System (ADS)

Zhao, Lv; Nelias, Daniel; Bardel, Didier; Wang, Meng; Marie, Benoit

2017-06-01

The fracture process in crystalline silicon is dictated by energy dissipation. Here, we show that sub-grains can deviate the crack path from the most energetically favorable ( 111) plane. Albeit a small misorientation across the sub-grain boundary is identified, upon entering into the sub-grain region, the crack either slightly deviates from the ideal ( 111) plane or directly chooses the secondly most favorable ( 110) one. We propose that the deviation is related to the dislocation core in the ( 111) crystal plane, which leads to a discontinuous atom debonding process and consequently a pronounced lattice trapping. In this circumstance, localized crystal defects prevail in the fracture process of silicon, while energetical criterion fails to interpret the crack path.

Process for preparing fine grain silicon carbide powder

DOEpatents

Wei, G.C.

Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Formation of intra-island grain boundaries in pentacene monolayers.

PubMed

Zhang, Jian; Wu, Yu; Duhm, Steffen; Rabe, Jürgen P; Rudolf, Petra; Koch, Norbert

2011-12-21

To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O(3) treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O(3)-treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island- and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.

{l_angle}110{r_angle} dendrite growth in aluminum feathery grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, S.; Rappaz, M.; Jarry, P.

1998-11-01

Automatic indexing of electron backscattered diffraction patterns, scanning electron microscopy, and optical microscopy observations have been carried out on aluminum-magnesium-silicon, aluminum-copper, and aluminum-silicon alloys directionally solidified or semicontinuously cast using the direct chill casting process. From these combined observations, it is shown that the feathery grains are made of {l_angle}110{r_angle} primary dendrite trunks (e.g., [011{bar 1}]) split in their centers by a coherent (111) twin plane. The average spacing of the dendrite trunks in the twin plane (about 10 to 20 {micro}m) is typically one order of magnitude smaller than that separating successive rows of trunks (or twin planes). Themore » [011{bar 1}] orientation of these trunks is close to the thermal gradient direction (typically within 15 deg)--a feature probably resulting from a growth competition mechanism similar to that occurring during normal <100> columnar dendrite growth. On both sides of these trunks, secondary dendrite arms also grow along {l_angle}110{r_angle} directions. Their impingement creates wavy noncoherent twin boundaries between the coherent twin planes. In the twin plane, evidence is shown that {l_angle}110{r_angle} branching mechanisms lead to the propagation of the twinned regions, to the regular arrangement of the primary dendrite trunks along a [{bar 2}11] direction, and to coherent planar twin boundaries. From these observations, it is concluded that the feathery grains are probably the result of a change from a normal <100> to a {l_angle}110{r_angle} surface tension/attachment kinetics anisotropy growth mode. Finally, the proposed mechanisms of leathery grain growth are further supported by the observation of {l_angle}110{r_angle} dendrite growth morphologies in thin aluminum-zinc coatings.« less

Analysis of defect structure in silicon. Silicon sheet growth development for the large area silicon sheet task of the Low-Cost Solar array Project

NASA Technical Reports Server (NTRS)

Natesh, R.; Mena, M.; Plichta, M.; Smith, J. M.; Sellani, M. A.

1982-01-01

One hundred ninety-three silicon sheet samples, approximately 880 square centimeters, were analyzed for twin boundary density, dislocation pit density, and grain boundary length. One hundred fifteen of these samples were manufactured by a heat exchanger method, thirty-eight by edge defined film fed growth, twenty-three by the silicon on ceramics process, and ten by the dendritic web process. Seven solar cells were also step-etched to determine the internal defect distribution on these samples. Procedures were developed or the quantitative characterization of structural defects such as dislocation pits, precipitates, twin & grain boundaries using a QTM 720 quantitative image analyzing system interfaced with a PDP 11/03 mini computer. Characterization of the grain boundary length per unit area for polycrystalline samples was done by using the intercept method on an Olympus HBM Microscope.

Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jugdersuren, B.; Kearney, B. T.; Queen, D. R.

We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline siliconmore » is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.« less

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Optimization of strength and ductility in nanotwinned ultrafine grained Ag: twin density and grain orientations

DOE PAGES

Ott, R. T.; Geng, J.; Besser, M. F.; ...

2015-06-27

Nanotwinned ultrafine grained Ag thick films with different twin densities and orientations have been synthesized by magnetron sputtering with a wide-range of deposition rates. The twin boundary (TB) spacings and orientations as well as the grain size for the different deposition conditions have been characterized by both synchrotron X-ray scattering and transmission electron microscopy (TEM). Structural characterization combined with uniaxial tensile tests of the free-standing films reveals a large increase in the yield strength for films deposited at high deposition rates without any accompanying change in the TB spacing – a behavior that is in contrast with what has beenmore » reported in the literature. We find that films deposited at lower deposition rates exhibit more randomly oriented grains with a lower overall twin density (averaged over all the grains) than the more heavily twinned grains with strong <111> fiber texture in the films deposited at higher deposition rates. The TB spacing in the twinned grains, however, does not show any significant dependence on the deposition rate. The dependence of the strength and ductility on the twin density and orientations can be described by two different soft deformation modes: 1) untwinned grains and 2) nanowinned grains that are not oriented with <111> along the growth direction. The untwinned grains provide relatively low resistance to slip, and thus decreased strength, while the nanotwinned grains that are not oriented with <111> along the growth direction are softer than nanotwinned grains that are oriented with <111> along the growth direction. We reveal that an ultrafine-grained (150-200 nm) structure consisting of a mixture of nanotwinned (~ 8-12 nm spacing) and untwined grains yields the best combination of high strength and uniform tensile ductility.« less

The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Li, Qing-Shan; Hu, Bo; Li, Wei-Bing

2009-06-01

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

NASA Technical Reports Server (NTRS)

Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

PubMed Central

Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

2012-01-01

The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations. PMID:23230505

Formation of highly preferred orientation of β-Sn grains in solidified Cu/SnAgCu/Cu micro interconnects under temperature gradient effect

NASA Astrophysics Data System (ADS)

Zhao, N.; Zhong, Y.; Dong, W.; Huang, M. L.; Ma, H. T.; Wong, C. P.

2017-02-01

β-Sn grain orientation and configuration are becoming crucial factors to dominate the lifetime of solder interconnects in three-dimensional integrated circuit packaging. In this paper, we found that a temperature gradient during solidification significantly dominated the orientation and configuration of the final β-Sn grains in Cu/SnAgCu/Cu micro interconnects. Being different from the random orientations and growth fronts meeting or cyclic twin boundary forming near the center after homogeneous temperature bonding, the β-Sn grains solidified under a certain temperature gradient were observed to follow a highly preferred orientation with their c-axis departing from the direction of temperature gradient by about 45°-88°. Meanwhile, these preferred oriented β-Sn grains consisted of low angle grain boundary structures with misorientation in the range of 0°-15°. The mechanism was explained in terms of the anisotropy and directional growth of β-Sn grains. The results pave the way for grain orientation control in 3D packaging technology.

Microstructure study of ZnO thin films on Si substrate grown by MOCVD

NASA Astrophysics Data System (ADS)

Huang, Jingyun; Ye, Zhizhen; Lu, Huanming; Wang, Lei; Zhao, Binghui; Li, Xianhang

2007-08-01

The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0 0 0 1) direction with respect to the growth direction of Si (1 0 0) was no more than 5°. The [0 0 0 1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with (1\\,0\\,\\bar{1}\\,0) facet structures and large-angle boundaries with symmetric structure which could be explained by a low Σ coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jinlong, Lv, E-mail: ljlbuaa@126.com; State Key Lab of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084; Tongxiang, Liang, E-mail: ljltsinghua@126.com

The nanocrystalline pure nickels with different grain orientations were fabricated by direct current electrodeposition process. The grain size slightly decreased with the increasing of electrodeposition solution temperature. However, grain orientation was affected significantly. Comparing with samples obtained at 50 °C and 80 °C, sample obtained at 20 °C had the strongest (111) orientation plane which increased electrochemical corrosion resistance of this sample. At the same time, the lowest (111) orientation plane deteriorated electrochemical corrosion resistance of sample obtained at 50 °C. - Graphical abstract: The increased electrodeposition temperature promoted slightly grain refinement. The grain orientation was affected significantly by electrodepositionmore » solution temperature. The (111) orientation plane of sample increased significantly corrosion resistance. Display Omitted.« less

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor-liquid-solid technique

NASA Astrophysics Data System (ADS)

LeBoeuf, J. L.; Brodusch, N.; Gauvin, R.; Quitoriano, N. J.

2014-12-01

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor-liquid-solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the {1 0 0} surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries.

PubMed

Stoffers, Andreas; Barthel, Juri; Liebscher, Christian H; Gault, Baptiste; Cojocaru-Mirédin, Oana; Scheu, Christina; Raabe, Dierk

2017-04-01

In the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.

A multichip aVLSI system emulating orientation selectivity of primary visual cortical cells.

PubMed

Shimonomura, Kazuhiro; Yagi, Tetsuya

2005-07-01

In this paper, we designed and fabricated a multichip neuromorphic analog very large scale integrated (aVLSI) system, which emulates the orientation selective response of the simple cell in the primary visual cortex. The system consists of a silicon retina and an orientation chip. An image, which is filtered by a concentric center-surround (CS) antagonistic receptive field of the silicon retina, is transferred to the orientation chip. The image transfer from the silicon retina to the orientation chip is carried out with analog signals. The orientation chip selectively aggregates multiple pixels of the silicon retina, mimicking the feedforward model proposed by Hubel and Wiesel. The chip provides the orientation-selective (OS) outputs which are tuned to 0 degrees, 60 degrees, and 120 degrees. The feed-forward aggregation reduces the fixed pattern noise that is due to the mismatch of the transistors in the orientation chip. The spatial properties of the orientation selective response were examined in terms of the adjustable parameters of the chip, i.e., the number of aggregated pixels and size of the receptive field of the silicon retina. The multichip aVLSI architecture used in the present study can be applied to implement higher order cells such as the complex cell of the primary visual cortex.

Influence of grain orientation on the incipient oxidation behavior of Haynes 230 at 900 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xu, E-mail: xuw388@mail.usask.ca; Fan, Fan; Szpunar, Jerzy A.

Ni-based superalloy Haynes 230 is used in many applications such as very high temperature reactor (VHTR) or solid oxide fuel cells (SOFCs) where it is exposed to high temperature service environment. In order to improve the resistance for high temperature oxidation, the effect of crystallographic orientation on the early stage oxidation was investigated. It was demonstrated that different oxide thicknesses are formed on grains having different orientations. Comparison of electron backscatter diffraction (EBSD) orientation maps before and after oxidation at 900 °C indicates that grains near (111) orientation, especially with the deviation angle from <111> that is smaller than 20°,more » are more oxidation resistant than grains of other orientations. Correlation between the results of electron backscatter diffraction (EBSD) and atomic force microscopy (AFM) was used to compare the oxidation rate of grains having different crystallographic orientation. The oxidation rate was found to change with the crystallographic orientation as follows (111) < (110) < (100), also it was demonstrated that the oxidation rate changes are a nearly linear function of the angle of deviation from <111> direction. The morphology of surface oxide also depends on the orientation of grains. - Highlights: • Comparison of EBSD maps before and after oxidation allows to investigate the effect of orientation on oxidation in a more direct way; • Effect of crystallographic orientation on oxidation behavior of alloy 230 is studied by combination of EBSD and AFM; • Different thickness of oxide is formed on grain with different orientation and dependence of anisotropic oxidation behavior is discussed; • The morphology of grains is also orientation dependence.« less

Solid-phase crystallization of amorphous Si films on glass and Si wafer

NASA Astrophysics Data System (ADS)

Lee, Dong Nyung

2011-11-01

When amorphous silicon films deposited on glass by physical or chemical vapor deposition are annealed, they undergo crystallization by nucleation and growth. The growth rate of Si crystallites is the highest in their <111> directions along or nearly along the film surface. The directed crystallization is likely to develop the <110>//ND or <111>//ND oriented Si crystallites. As the annealing temperature increases, the equiaxed crystallization increases, which in turn increases the random orientation. When amorphous Si is under a stress of the order of 0.1 GPa at about 540 °C, the tensile stress increases the growth rate of Si grains, whereas the compressive stress decreases the growth rate. However, the crystal growth rate increases with the increasing hydrostatic pressure, when the pressure is of the order of GPa at 530-540 °C. These phenomena have been discussed based on the directed crystallization model advanced before, which has been further elaborated.

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Simon, P.; Sontheimer, T.; Leendertz, C.; Gorka, B.; Schnegg, A.; Rech, B.; Lips, K.

2012-09-01

Employing quantitative electron-paramagnetic resonance analysis and numerical simulations, we investigate the performance of thin-film polycrystalline silicon solar cells as a function of defect density. We find that the open-circuit voltage is correlated to the density of defects, which we assign to coordination defects at grain boundaries and in dislocation cores. Numerical device simulations confirm the observed correlation and indicate that the device performance is limited by deep defects in the absorber bulk. Analyzing the defect density as a function of grain size indicates a high concentration of intra-grain defects. For large grains (>2 μm), we find that intra-grain defects dominate over grain boundary defects and limit the solar cell performance.

Crystallization of the glassy phase of grain boundaries in silicon nitride

NASA Technical Reports Server (NTRS)

Jefferson, D. A.; Thomas, J. M.; Wen, S.

1984-01-01

Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Grung, B. L.; Heaps, J. D.; Schmit, F. M.; Schuldt, S. B.; Zook, J. D.

1981-01-01

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Influence of SiC grain boundary character on fission product transport in irradiated TRISO fuel

NASA Astrophysics Data System (ADS)

Lillo, T. M.; van Rooyen, I. J.

2016-05-01

In this study, the fission product precipitates at silicon carbide grain boundaries from an irradiated TRISO particle were identified and correlated with the associated grain boundary characteristics. Precession electron diffraction in the transmission electron microscope provided the crystallographic information needed to identify grain boundary misorientation and boundary type (i.e., low angle, random high angle or coincident site lattice (CSL)-related). The silicon carbide layer was found to be composed mainly of twin boundaries and small fractions of random high angle and low angle grain boundaries. Most fission products were found at random, high-angle grain boundaries, with small fractions at low-angle and CSL-related grain boundaries. Palladium (Pd) was found at all types of grain boundaries while Pd-uranium and Pd-silver precipitates were only associated with CSL-related and random, high-angle grain boundaries. Precipitates containing only Ag were found only at random, high-angle grain boundaries, but not at low angle or CSL-related grain boundaries.

Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novak, A. V., E-mail: novak-andrei@mail.ru

2014-12-15

The effect of formation conditions on the morphology of silicon films with hemispherical grains (HSG-Si) obtained by the method of low-pressure chemical vapor deposition (LPCVD) is investigated by atomic-force microscopy. The formation conditions for HSG-Si films with a large surface area are found. The obtained HSG-Si films make it possible to fabricate capacitor structures, the electric capacitance of which is twice as large in comparison to that of capacitors with “smooth” electrodes from polycrystalline silicon.

The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

NASA Technical Reports Server (NTRS)

Fripp, A. L., Jr.

1974-01-01

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomai, S.; Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192; Terai, K.

We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the differencemore » of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.« less

Preparation and Characterization of RF Sputtered BARIUM(2) SILICON(2) Titanium OXYGEN(8) Thin Films

NASA Astrophysics Data System (ADS)

Li, Yi.

Thin films of barium titanium silicate ( Ba_2Si_2TiO_8) are grown on crystalline (100) Si at substrate temperatures raging from 750 to 955^circC by the radio-frequency triode sputtering technique. The chemical composition, microstructure, physical properties, and growth conditions of the deposited films are investigated by dc and high-frequency dielectric measurements, wavelength dispersive and energy dispersive x-ray spectrometries, x-ray diffraction spectrometry, and optical and scanning electron microscopies. The results of the x-ray diffraction analysis show that the Ba_2Si_2TiO _8 films deposited at the optimum condition of substrate temperature of 845^circ C, 4 cm source-substance distance, 50 W rf power, and 1.2 times 10^ {-3} torr pressure of Ar, are highly c -axis oriented. The as-deposited films are smooth, glossy, polycrystalline films, exhibiting a bulk resistivity range of 10^6 Omegacdotcm, and an isotropic surface resistivity of 1.5 times 10^3 Omegacdot cm. The relative dielectric constant is 0.05, and the dielectric loss is lower than 1.0, in the frequency band 9 ~ 1000 MHz. The high-frequency impedance of BST films, which is typical for piezoelectric materials, gives a minimum impedance frequency of 9.0 MHz and a series resonant frequency of 9.5 MHz. Optical and SEM observations show that the film texture is dependent on the substrate conditions. The non-liquid-like grain coalescence of the Ba_2Si_2TiO _8 grains is characteristic of a strong film -substrate interaction. The grain growth kinetics obtained from "short-time" sputtering gives an initial lateral grain growth rate of 770 nm/min at 845^circ C, which decreases with the grain size. The initial film growth rate in the direction of thickness, measured from SEM micrographs, is 1.95 nm/min, and decreases with sputtering time. The activation free energy for grain growth is 359 +/- 30 KJ/mol for the initial stage, decreasing to 148 +/- 20 KJ/mol for the final stage. The variation of the grain growth rate and the activation energy with grain size is the result of a combined nucleation and growth mechanism in the initial stage of the film growth, and a coalescence -dominated growth mechanism at longer sputtering time and at higher temperature. Film orientation is sensitive to the supersaturation adjacent to the film surface, which depends on the source-substrate distance and substrate temperature. The effect of the substrate temperature on the orientation of the film is investigated over a wide temperature range using (100) and (111) Si substrates. Several orientations for the BST films, including an amorphous state, are obtained with increasing substrate temperature. This is discussed in relation to the atomic plane density and the energetics for the deposition process.

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Natesh, R.; Stringfellow, G. B.; Virkar, A. V.; Dunn, J.; Guyer, T.

1983-01-01

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Mechanical behavior and failure phenomenon of an in situ-toughened silicon nitride

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Choi, Sung R.; Freedman, Marc R.; Jenkins, Michael G.

1990-01-01

The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS and NEMS

DTIC Science & Technology

2012-09-03

described in previous reports [32]. In this experimental technique, the specimen ends are gripped to loadcell and PZT actuator mounted on three dimensional...shown in Figure 3. This was due to the random distribution of columnar grains with different texture where KIC was dependent on one particular grain...Engineering: A, 268 (1-2), pp. 116-126, 1999 [19] C.P. Chen, and M.H. Leipold, "Fracture toughness of silicon", American Ceramics Society Bulletin

Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

PubMed Central

Sun, Fu-Long; Li, Cai-Fu; Zhu, Qing-Sheng; Zhang, Hao; Suganuma, Katsuaki

2018-01-01

This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process. PMID:29473865

Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via.

PubMed

Sun, Fu-Long; Liu, Zhi-Quan; Li, Cai-Fu; Zhu, Qing-Sheng; Zhang, Hao; Suganuma, Katsuaki

2018-02-23

This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm²) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Processing and properties of SiC whisker reinforced Si sub 3 N sub 4 ceramic matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nunn, S.D.

1991-01-01

Silicon carbide whiskers reinforced silicon nitride ceramic matrix composites were pressureless sintered to high density by liquid phase sintering. Important processing parameters included: whisker dispersion by ultrasonic shear homogenization, particle refinement by attrition milling, pressure slip casting to obtain high greed densities, and sintering in a protective powder bed to limit decomposition. Composites with a {beta}20-Si{sub 3}N{sub 4} solid solution matrix containing 20 vol.% SiC whiskers were sintered to 98-100% theoretical density; composites having a Si{sub 3}N{sub 4} matrix containing YAG sintering aid were sintered to 98% of the theoretical density with 20 vol.% SiC whiskers, and 94% density withmore » 30 vol.% SiC whiskers. Analysis of the pressureless sintered composites revealed orientation of the SiC whiskers and the Si{sub 3}N{sub 4} matrix grains. The mechanical properties of hot pressed Si{sub 3}N{sub 4} composites reinforced with 20 vol.% SiC whiskers were shown to depend on the characteristics of the intergranular phase. Variations in the properties of the composites were analyzed in terms of the amount and morphology of the secondary phase, and the development of internal residual stresses due to the thermal expansion mismatch between the sintering aid phase at the grain boundaries.« less

Automated array assembly task development of low-cost polysilicon solar cells

NASA Technical Reports Server (NTRS)

Jones, G. T.

1980-01-01

Development of low cost, large area polysilicon solar cells was conducted in this program. Three types of polysilicon materialk were investigated. A theoretical and experimenal comparison between single crystal silicon and polysilicon solar cell efficiency was performed. Significant electrical performance differences were observed between types of wafer material, i.e. fine grain and coarse grain polysilicon and single crystal silicon. Efficiency degradation due to grain boundaries in fin grain and coarse grain polysilicon was shown to be small. It was demonstrated that 10 percent efficient polysilicon solar cells can be produced with spray on n+ dopants. This result fulfills an important goal of this project, which is the production of batch quantity of 10 percent efficient polysilicon solar cells.

Improved toughness of refractory compounds. [with elimination of the grain boundary phase

NASA Technical Reports Server (NTRS)

Wright, T. R.; Niesz, D. E.

1974-01-01

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Stardust from Supernovae and Its Isotopes

NASA Astrophysics Data System (ADS)

Hoppe, Peter

Primitive solar system materials, namely, meteorites, interplanetary dust particles, and cometary matter contain small quantities of nanometer- to micrometer-sized refractory dust grains that exhibit large isotopic abundance anomalies. These grains are older than our solar system and have been named "presolar grains." They formed in the winds of red giant and asymptotic giant stars and in the ejecta of stellar explosions, i.e., represent a sample of stardust that can be analyzed in terrestrial laboratories for isotopic compositions and other properties. The inventory of presolar grains is dominated by grains from red giant and asymptotic giant branch stars. Presolar grains from supernovae form a minor but important subpopulation. Supernova (SN) minerals identified to date include silicon carbide, graphite, silicon nitride, oxides, and silicates. Isotopic studies of major, minor, and trace elements in these dust grains have provided detailed insights into nucleosynthetic and mixing processes in supernovae and how dust forms in these violent environments.

Interstellar Silicon Depletion and the Ultraviolet Extinction

NASA Astrophysics Data System (ADS)

Mishra, Ajay; Li, Aigen

2018-01-01

Spinning small silicate grains were recently invoked to account for the Galactic foreground anomalous microwave emission. These grains, if present, will absorb starlight in the far ultraviolet (UV). There is also renewed interest in attributing the enigmatic 2175 Å interstellar extinction bump to small silicates. To probe the role of silicon in the UV extinction, we explore the relations between the amount of silicon required to be locked up in silicates [Si/H]dust and the 2175 Å bump or the far-UV extinction rise, based on an analysis of the extinction curves along 46 Galactic sightlines for which the gas-phase silicon abundance [Si/H]gas is known. We derive [Si/H]dust either from [Si/H]ISM - [Si/H]gas or from the Kramers- Kronig relation which relates the wavelength-integrated extinction to the total dust volume, where [Si/H]ISM is the interstellar silicon reference abundance and taken to be that of proto-Sun or B stars. We also derive [Si/H]dust from fi�tting the observed extinction curves with a mixture of amorphous silicates and graphitic grains. We fi�nd that in all three cases [Si/H]dust shows no correlation with the 2175 Å bump, while the carbon depletion [C/H]dust tends to correlate with the 2175 Å bump. This supports carbon grains instead of silicates as the possible carrier of the 2175 Å bump. We also �find that neither [Si/H]dust nor [C/H]dust alone correlates with the far-UV extinction, suggesting that the far-UV extinction is a combined effect of small carbon grains and silicates.

Interstellar Silicon Depletion and the Ultraviolet Extinction

NASA Astrophysics Data System (ADS)

Mishra, Ajay; Li, Aigen

2017-12-01

Spinning small silicate grains were recently invoked to account for the Galactic foreground anomalous microwave emission. These grains, if present, will absorb starlight in the far-ultraviolet (UV). There is also renewed interest in attributing the enigmatic 2175 \\mathringA interstellar extinction bump to small silicates. To probe the role of silicon in the UV extinction, we explore the relations between the amount of silicon required to be locked up in silicates {[{Si}/{{H}}]}{dust} and the 2175 \\mathringA bump or the far-UV extinction rise, based on an analysis of the extinction curves along 46 Galactic sightlines for which the gas-phase silicon abundance {[{Si}/{{H}}]}{gas} is known. We derive {[{Si}/{{H}}]}{dust} either from {[{Si}/{{H}}]}{ISM}‑{[{Si}/{{H}}]}{gas} or from the Kramers–Kronig relation, which relates the wavelength-integrated extinction to the total dust volume, where {[{Si}/{{H}}]}{ISM} is the interstellar silicon reference abundance and taken to be that of proto-Sun or B stars. We also derive {[{Si}/{{H}}]}{dust} from fitting the observed extinction curves with a mixture of amorphous silicates and graphitic grains. We find that in all three cases {[{Si}/{{H}}]}{dust} shows no correlation with the 2175 \\mathringA bump, while the carbon depletion {[{{C}}/{{H}}]}{dust} tends to correlate with the 2175 \\mathringA bump. This supports carbon grains instead of silicates as the possible carriers of the 2175 \\mathringA bump. We also find that neither {[{Si}/{{H}}]}{dust} nor {[{{C}}/{{H}}]}{dust} alone correlates with the far-UV extinction, suggesting that the far-UV extinction is a combined effect of small carbon grains and silicates.

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

1981-01-01

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Grain Boundary Plane Orientation Fundamental Zones and Structure-Property Relationships

PubMed Central

Homer, Eric R.; Patala, Srikanth; Priedeman, Jonathan L.

2015-01-01

Grain boundary plane orientation is a profoundly important determinant of character in polycrystalline materials that is not well understood. This work demonstrates how boundary plane orientation fundamental zones, which capture the natural crystallographic symmetries of a grain boundary, can be used to establish structure-property relationships. Using the fundamental zone representation, trends in computed energy, excess volume at the grain boundary, and temperature-dependent mobility naturally emerge and show a strong dependence on the boundary plane orientation. Analysis of common misorientation axes even suggests broader trends of grain boundary energy as a function of misorientation angle and plane orientation. Due to the strong structure-property relationships that naturally emerge from this work, boundary plane fundamental zones are expected to simplify analysis of both computational and experimental data. This standardized representation has the potential to significantly accelerate research in the topologically complex and vast five-dimensional phase space of grain boundaries. PMID:26498715

Grain boundary plane orientation fundamental zones and structure-property relationships

DOE Office of Scientific and Technical Information (OSTI.GOV)

Homer, Eric R.; Patala, Srikanth; Priedeman, Jonathan L.

2015-10-26

Grain boundary plane orientation is a profoundly important determinant of character in polycrystalline materials that is not well understood. This work demonstrates how boundary plane orientation fundamental zones, which capture the natural crystallographic symmetries of a grain boundary, can be used to establish structure-property relationships. Using the fundamental zone representation, trends in computed energy, excess volume at the grain boundary, and temperature-dependent mobility naturally emerge and show a strong dependence on the boundary plane orientation. Analysis of common misorientation axes even suggests broader trends of grain boundary energy as a function of misorientation angle and plane orientation. Due to themore » strong structure-property relationships that naturally emerge from this work, boundary plane fundamental zones are expected to simplify analysis of both computational and experimental data. This standardized representation has the potential to significantly accelerate research in the topologically complex and vast five-dimensional phase space of grain boundaries.« less

Small, highly oriented Ru grains in intermediate layer realized through suppressing relaxation of low-angle grain boundaries for perpendicular recording media

NASA Astrophysics Data System (ADS)

Itagaki, Norikazu; Saito, Shin; Takahashi, Migaku

2009-04-01

Through analyzing the growth mechanism of the Ru layer in a nonmagnetic intermediate layer (NMIL) for perpendicular magnetic recording media, a concept for the NMIL is proposed in order to realize a recording layer of small, highly c-plane oriented grains with no intergranular exchange coupling. It was found that (1) fast Fourier transform analysis of plan-view transmission electron microscopy lattice images of Ru layers revealed that hexagonal close packed Ru grains in a c-plane oriented film readily coalesce with each other due to the disappearance of low-angle tilt boundaries. (2) A promising candidate for a NMIL consists of three individual epitaxially grown functional layers: a large-grain seed layer with a highly oriented sheet texture, a first interlayer of small grains, and a second interlayer of nonmagnetic grains isolated by a segregated oxide. (3) The Ru-SiO2/Ru/Mg NMIL based on the proposed concept exhibited small (diameter: 4.8 nm) Ru grains while retaining a narrow orientation distribution of 4.1°.

Silicon on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Pickering, C.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

LeBoeuf, J. L., E-mail: jerome.leboeuf@mail.mcgill.ca; Brodusch, N.; Gauvin, R.

2014-12-28

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30%more » single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.« less

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

NASA Astrophysics Data System (ADS)

Lee, Ji-hyun; Chae, Byeong-Kyu; Kim, Joong-Jeong; Lee, Sun Young; Park, Chan Gyung

2015-01-01

Dopant control becomes more difficult and critical as silicon devices become smaller. We observed the dopant distribution in a thermally annealed polysilicon gate using Transmission Electron Microscopy (TEM) and Atom probe tomography (APT). Phosphorus was doped at the silicon-nitride-diffusion-barrier-layer-covered polycrystalline silicon gate. Carbon also incorporated at the gate for the enhancement of operation uniformity. The impurity distribution was observed using atom probe tomography. The carbon atoms had segregated at grain boundaries and suppressed silicon grain growth. Phosphorus atoms, on the other hand, tended to pile-up at the interface. A 1-nm-thick diffusion barrier effectively blocked P atom out-diffusion. [Figure not available: see fulltext.

Quantitative analysis of defects in silicon: Silicon sheet growth development for the large area silicon sheet task of the low cost solar array project

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Qidwai, H. A.

1978-01-01

The various steps involved in the chemical polishing and etching of silicon samples are described and the data on twins, grain boundaries and dislocation pits from fifty-three (53) samples are discussed.

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

NASA Astrophysics Data System (ADS)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

NASA Astrophysics Data System (ADS)

Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

2016-04-01

This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of -1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 °C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

78 FR 70574 - Grain-Oriented Electrical Steel From China, Czech Republic, Germany, Japan, Korea, Poland, and...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-26

...)] Grain-Oriented Electrical Steel From China, Czech Republic, Germany, Japan, Korea, Poland, and Russia..., Germany, Japan, Korea, Poland, and Russia of grain-oriented electrical steel, provided for in subheadings... Republic, Germany, Japan, Korea, Poland, and Russia. Accordingly, effective September 18, 2013, the...

Quantitative Analysis of Defects in Silicon. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Qidwai, H. A.

1979-01-01

The various steps involved in the chemical polishing and etching of silicon samples are described. Data on twins, dislocation pits, and grain boundaries from thirty-one (31) silicon sample are also discussed. A brief review of the changes made to upgrade the image analysis system is included.

Effect of Grain Boundary Misorientation on Electromigration in Lead-Free Solder Joints

NASA Astrophysics Data System (ADS)

Tasooji, Amaneh; Lara, Leticia; Lee, Kyuoh

2014-12-01

Reduction in microelectronic interconnect size gives rise to solder bumps consisting of few grains, approaching a single- or bicrystal grain morphology in C4 bumps. Single grain anisotropy, individual grain orientation, presence of easy diffusion paths along grain boundaries, and the increased current density in these small solder bumps aggravate electromigration. This reduces the reliability of the entire microelectronic system. This paper focuses on electromigration behavior in Pb-free solder, specifically the Sn-0.7 wt.%Cu alloy. We discuss the effects of texture, grain orientation, and grain boundary misorientation angle on electromigration (EM) and intermetallic compound formation in EM-tested C4 bumps. The detailed electron backscatter diffraction (EBSD) analysis used in this study reveals the greater influence of grain boundary misorientation on solder bump electromigration compared with the effect associated with individual grain orientation.

Iron and nickel isotope compositions of presolar silicon carbide grains from supernovae

NASA Astrophysics Data System (ADS)

Kodolányi, János; Stephan, Thomas; Trappitsch, Reto; Hoppe, Peter; Pignatari, Marco; Davis, Andrew M.; Pellin, Michael J.

2018-01-01

We report the carbon, silicon, iron, and nickel isotope compositions of twenty-five presolar SiC grains of mostly supernova (SN) origin. The iron and nickel isotope compositions were measured with the new Chicago Instrument for Laser Ionization, CHILI, which allows the analysis of all iron and nickel isotopes without the isobaric interferences that plagued previous measurements with the NanoSIMS. Despite terrestrial iron and nickel contamination, significant isotopic anomalies in 54Fe/56Fe, 57Fe/56Fe, 60Ni/58Ni, 61Ni/58Ni, 62Ni/58Ni, and 64Ni/58Ni were detected in nine SN grains (of type X). Combined multi-isotope data of three grains with the largest nickel isotope anomalies (>100‰ or <-100‰ in at least one isotope ratio, when expressed as deviation from the solar value) are compared with the predictions of two SN models, one with and one without hydrogen ingestion in the He shell prior to SN explosion. One grain's carbon-silicon-iron-nickel isotope composition is consistent with the prediction of the model without hydrogen ingestion, whereas the other two grains' isotope anomalies could not be reproduced using either SN models. The discrepancies between the measured isotope compositions and model predictions may indicate element fractionation in the SN ejecta prior to or during grain condensation, and reiterate the need for three-dimensional SN models.

A Crystal Plasticity Model of Fatigue of Dissimilar Magnesium Alloy Bi-Crystals

NASA Astrophysics Data System (ADS)

Knight, Simon

A crystal plasticity finite element (CPFE) model was applied to the fatigue deformation of dissimilar Mg alloy bi-crystals. The mesoscopic stress-strain and microscopic slip and twinning behaviour of the model were first validated with experimental tension and compression data of pure Mg single crystals. High-cycle fatigue (HCF) simulations up to 1000 cycles were then used to systematically examine the effect of different textures on the cyclic deformation behavior of Mg AZ31-AZ80 bi-crystals at room-temperature. Fatigue behaviour was characterized in terms of the mesoscopic average stress-strain response and the evolution of the microscopic deformation (slip/twin activity). The model captures load asymmetry, cyclic hardening/softening and ratcheting. However, the model did not capture stress concentrations at the grain boundary (GB) for the grain shapes considered. Either basal slip or tensile twinning was activated for any given orientation. When the soft AZ31 grain is oriented for basal slip almost all the shear strain is contained in that grain and has approximately ten times more accumulated shear strain than the other orientations. The results reveal there is a strong effect from orientation combinations on the cyclic deformation wherein a "hard" orientation shields a "soft" orientation from strain. When the AZ80 grain is oriented for basal slip and the AZ31 grain is oriented for tensile twinning the bi-crystal is soft, but only in one direction since twinning is a polar mechanism. Approximately half as much accumulated shear strain occurs when both grains are oriented for twinning. The slip and twinning systems quickly harden in AZ31 in the first few hundred cycles and the shear strain amplitudes quickly devolve from values between 10-6 - 10-4 to around 10-7; values which would be difficult to resolve experimentally. The results were then extended to the possible effects on the fatigue behaviour of an AZ31-AZ80 dissimilar weld idealized as an AZ31-AZ80 bi-crystal. It is predicted that the worst fatigue behaviour would occur when one grain is oriented for basal slip: AZ31 grain, results in strain localization; AZ80 grain, results in an increase in twin boundaries and irreversible deformation in an AZ31 grain.

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

NASA Astrophysics Data System (ADS)

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

2017-09-01

We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Liu, Yao; Li, Beizhi; Kong, Lingfei

2018-03-01

The precision and crack-free surface of brittle silicon carbide (SiC) ceramic was achieved in the nanoscale ductile grinding. However, the nanoscale scratching mechanism and the root causes of SiC ductile response, especially in the atomistic aspects, have not been fully understood yet. In this study, the SiC atomistic scale scratching mechanism was investigated by single diamond grain scratching simulation based on molecular dynamics. The results indicated that the ductile scratching process of SiC could be achieved in the nanoscale depth of cut through the phase transition to an amorphous structure with few hexagonal diamond structure. Furthermore, the silicon atoms in SiC could penetrate into diamond grain which may cause wear of diamond grain. It was further found out that the chip material in the front of grain flowed along the grain side surface to form the groove protrusion as the scratching speed increases. The higher scratching speed promoted more atoms to transfer into the amorphous structure and reduced the hexagonal diamond and dislocation atoms number, which resulted in higher temperature, smaller scratching force, smaller normal stress, and thinner subsurface damage thickness, due to larger speed impaction causing more bonds broken which makes the SiC more ductile.

Physical and Tribological Characteristics of Ion-Implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

1994-01-01

Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

Anisotropic Tribological Properties of Silicon Carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Analysis of defect structure in silicon. Effect of grain boundary density on carrier mobility in UCP material

NASA Technical Reports Server (NTRS)

Dunn, J.; Stringfellow, G. B.; Natesh, R.

1982-01-01

The relationships between hole mobility and grain boundary density were studied. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using a quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Toxic Compounds in Our Food: Arsenic Uptake By Rice and Potential Mitigation By Silicon

NASA Astrophysics Data System (ADS)

Seyfferth, A.; Gill, R.; Penido, E.

2014-12-01

Arsenic is a ubiquitous element in soils worldwide and has the potential to negatively impact human and ecosystem health under certain biogeochemical conditions. While arsenic is relatively immobile in most oxidized soils due to a high affinity for soil solids, arsenic becomes mobilized under reduced soil conditions due to the reductive dissolution of iron(III) oxides thereby releasing soil-bound arsenic. Since arsenic is a well-known carcinogen, this plant-soil process has the potential to negatively impact the lives of billions of rice consumers worldwide upon plant uptake and grain storage of released arsenic. Moreover, arsenic uptake by rice is excacerbated by the use of As-laden groundwater for rice irrigation. One proposed strategy to decrease arsenic uptake by rice plants is via an increase in dissolved silicon in paddy soil solution (pore-water), since silicic acid and arsenous acid share an uptake pathway. However, several soil processes that influence arsenic cycling may be affected by silicon including desorption from bulk soil, formation and mineralogy of iron(III) oxide plaque, and adsorption/desorption onto/from iron plaque; the effect of silicon on these soil processes will ultimately dictate the effectiveness of altered dissolved silicon in decreasing arsenic uptake at the root, which in turn dictates the concentration of arsenic found in grains. Furthermore, the source of silicon may impact carbon cycling and, in particular, methane emissions. Here, impacts of altered dissolved silicon on processes that affect rhizospheric biogeochemical cycling of arsenic and subsequent plant-uptake, and how it influences other biogeochemical cycles such as carbon and iron are investigated. We show that silicon can decrease arsenic uptake and grain storage under certain conditions, and that altered silicon affects the type of iron (III) oxide that comprises iron plaque.

Orientational anisotropy and interfacial transport in polycrystals

NASA Astrophysics Data System (ADS)

Moghadam, M. M.; Rickman, J. M.; Harmer, M. P.; Chan, H. M.

2016-04-01

Interfacial diffusion is governed to a large degree by geometric parameters that are determined by crystallographic orientation. In this study, we assess the impact of orientational anisotropy on mass transport at internal interfaces, focusing on the role of preferred crystallographic orientation (i.e., texture) on mass diffusion in a polycrystal. More specifically, we perform both numerical and analytical studies of steady-state diffusion for polycrystals having various grain-orientation distributions. By relating grain misorientation to grain-boundary energies and, via the Borisov relation, to the diffusivity, we link microstructure variability to kinetics. Our aim is to correlate shape features of the orientation distribution, such as the location and shapes of peaks, with the calculated effective diffusivity. Finally, we discuss the role of crystallographic constraints, such as those associated with grain junctions, in determining the effective diffusivity of a polycrystal.

Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon

NASA Astrophysics Data System (ADS)

Oriwol, Daniel; Trempa, Matthias; Sylla, Lamine; Leipner, Hartmut S.

2017-04-01

Dislocation clusters are the main crystal defects in multicrystalline silicon and are detrimental for solar cell efficiency. They were formed during the silicon ingot casting due to the relaxation of strain energy. The evolution of the dislocation clusters was studied by means of automated analysing tools of the standard wafer and cell production giving information about the cluster development as a function of the ingot height. Due to the observation of the whole wafer surface the point of view is of macroscopic nature. It was found that the dislocations tend to build clusters of high density which usually expand in diameter as a function of ingot height. According to their structure the dislocation clusters can be divided into light and dense clusters. The appearance of both types shows a clear dependence on the orientation of the grain growth direction. Additionally, a process of annihilation of dislocation clusters during the crystallization has been observed. To complement the macroscopic description, the dislocation clusters were also investigates by TEM. It is shown that the dislocations within the subgrain boundaries are closely arranged. Distances of 40-30 nm were found. These results lead to the conclusion that the dislocation density within the cluster structure is impossible to quantify by means of etch pit counting.

Commercial scale production of Fe-6.5 wt. % Si sheet and its magnetic properties

NASA Astrophysics Data System (ADS)

Takada, Y.; Abe, M.; Masuda, S.; Inagaki, J.

1988-11-01

Commercial scale production of a Fe-6.5 wt. % Si sheet has been successfully developed. Presently manufactured sheets are in coil form, whose thickness ranges from 0.1 to 0.5 mm with a maximum width of 400 mm. Magnetic properties of the manufactured sheet have been investigated. The permeability of Fe-6.5 wt. % Si sheet is about 10 times higher than the conventional nonoriented silicon steel sheet. The core losses are less than half the conventional, and even less than that of the grain-oriented silicon steel sheet at frequencies over 400 Hz. Superior soft magnetic properties are attributed to the low magnetostriction and high electric resistivity of this alloy. It is well known that the Fe-6.5 wt. % Si alloy has poor ductility in conventional mechanical work. But investigation of the forming conditions has enabled the stamping and bending of alloy sheets. Low core losses and high permeability make Fe-6.5 wt. % Si sheet adequate for motor cores, transformer cores operating at high frequencies, and magnetic shielding. Application to the micromotor core shows that Fe-6.5 wt. % Si sheet reduces the consumption of no-load electric current by 25% in comparison with the conventional silicon steel.

Three-dimensional full-field X-ray orientation microscopy

PubMed Central

Viganò, Nicola; Tanguy, Alexandre; Hallais, Simon; Dimanov, Alexandre; Bornert, Michel; Batenburg, Kees Joost; Ludwig, Wolfgang

2016-01-01

A previously introduced mathematical framework for full-field X-ray orientation microscopy is for the first time applied to experimental near-field diffraction data acquired from a polycrystalline sample. Grain by grain tomographic reconstructions using convex optimization and prior knowledge are carried out in a six-dimensional representation of position-orientation space, used for modelling the inverse problem of X-ray orientation imaging. From the 6D reconstruction output we derive 3D orientation maps, which are then assembled into a common sample volume. The obtained 3D orientation map is compared to an EBSD surface map and local misorientations, as well as remaining discrepancies in grain boundary positions are quantified. The new approach replaces the single orientation reconstruction scheme behind X-ray diffraction contrast tomography and extends the applicability of this diffraction imaging technique to material micro-structures exhibiting sub-grains and/or intra-granular orientation spreads of up to a few degrees. As demonstrated on textured sub-regions of the sample, the new framework can be extended to operate on experimental raw data, thereby bypassing the concept of orientation indexation based on diffraction spot peak positions. This new method enables fast, three-dimensional characterization with isotropic spatial resolution, suitable for time-lapse observations of grain microstructures evolving as a function of applied strain or temperature. PMID:26868303

The U.S. and Japanese amorphous silicon technology programs A comparison

NASA Technical Reports Server (NTRS)

Shimada, K.

1984-01-01

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

Impacts of Steel-Slag-Based Silicate Fertilizer on Soil Acidity and Silicon Availability and Metals-Immobilization in a Paddy Soil

PubMed Central

Ning, Dongfeng; Liang, Yongchao; Liu, Zhandong; Xiao, Junfu; Duan, Aiwang

2016-01-01

Slag-based silicate fertilizer has been widely used to improve soil silicon- availability and crop productivity. A consecutive early rice-late rice rotation experiment was conducted to test the impacts of steel slag on soil pH, silicon availability, rice growth and metals-immobilization in paddy soil. Our results show that application of slag at a rate above higher or equal to 1 600 mg plant-available SiO2 per kg soil increased soil pH, dry weight of rice straw and grain, plant-available Si concentration and Si concentration in rice shoots compared with the control treatment. No significant accumulation of total cadmium (Cd) and lead (Pb) was noted in soil; rather, the exchangeable fraction of Cd significantly decreased. The cadmium concentrations in rice grains decreased significantly compared with the control treatment. In conclusion, application of steel slag reduced soil acidity, increased plant–availability of silicon, promoted rice growth and inhibited Cd transport to rice grain in the soil-plant system. PMID:27973585

The effect of preparation conditions on the structure and mechanical properties of reaction-sintered silicon nitride

NASA Technical Reports Server (NTRS)

Heinrich, J.

1980-01-01

The microstructure of reaction sintered silicon nitride (RSSN) was changed over a wide range by varying the grain density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behavior, and resistance to thermal shock was investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of alpha and beta Si3N4. In view of high temperature engineering applications of RSSN, potentials for optimizing the material's properties by controlled processing are discussed.

Surface and Internal Structure of Pristine Presolar Silicon Carbide

NASA Astrophysics Data System (ADS)

Stroud, R. M.; Bernatowicz, T. J.

2005-03-01

We report results from transmission electron microcopy studies of the surface and internal structure of two pristine presolar SiC grains, including definitive evidence of an oxide rim on one grain, and the presence of internal TiC and AlN grains.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Junfeng, E-mail: chenjunfeng@fzu.edu.cn; Zou, Linchi, E-mail: zoulinchi1201@163.com; Li, Qiang

The microstructure evolution of the 7050 Al alloy treated by age-forming was studied using a designed device which can simulate the age-forming process. The grain shape, grain boundary misorientation and grain orientation evolution of 7050 Al alloy during age-forming have been quantitatively characterized by electron backscattering diffraction technique. The results show that age-forming produced abundant low-angle boundaries and elongated grains, which attributed to stress induced dislocation movement and grain boundary migration during the age-forming process. On the other side, the stress along rolling direction caused some unstable orientation grains to rotate towards the Brass and S orientations during the age-formingmore » process. Hence, the intensity of the rolling texture orientation in age-formed samples is enhanced. But this effect decays gradually with increasing aging time, since stress decreases and precipitation hardening occurs during the age-forming process. - Highlights: • Quantitative analysis of grain evolution of 7050 Al alloys during age-forming • Stress induces some grain rotation of 7050 Al alloys during age-forming. • Creep leads to elongate grain of 7050 Al alloys during age-forming. • Obtains a trend on texture evolution during age-forming applied stress.« less

Potential variation around grain boundaries in BaSi{sub 2} films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baba, Masakazu; Tsukahara, Daichi; Toko, Kaoru

2014-12-21

Potential variations across the grain boundaries (GBs) in a 100 nm thick undoped n-BaSi{sub 2} film on a cast-grown multicrystalline Si (mc-Si) substrate are evaluated using Kelvin probe force microscopy (KFM). The θ-2θ X-ray diffraction pattern reveals diffraction peaks, such as (201), (301), (410), and (411) of BaSi{sub 2}. Local-area electron backscatter diffraction reveals that the a-axis of BaSi{sub 2} is tilted slightly from the surface normal, depending on the local crystal plane of the mc-Si. KFM measurements show that the potentials are not significantly disordered in the grown BaSi{sub 2}, even around the GBs of mc-Si. The potentials are highermore » at GBs of BaSi{sub 2} around Si GBs that are formed by grains with a Si(111) face and those with faces that deviate slightly from Si(111). Thus, downward band bending occurs at these BaSi{sub 2} GBs. Minority carriers (holes) undergo a repelling force near the GBs, which may suppress recombination as in the case of undoped n-BaSi{sub 2} epitaxial films on a single crystal Si(111) substrate. The barrier height for hole transport across the GBs varies in the range from 10 to 55 meV. The potentials are also higher at the BaSi{sub 2} GBs grown around Si GBs composed of grains with Si(001) and Si(111) faces. The barrier height for hole transport ranges from 5 to 55 meV. These results indicate that BaSi{sub 2} GBs formed on (111)-dominant Si surfaces do not have a negative influence on the minority-carrier properties, and thus BaSi{sub 2} formed on underlayers, such as (111)-oriented Si or Ge and on (111)-oriented mc-Si, can be utilized as a solar cell active layer.« less

Identification of a cast iron alloy containing nonstrategic elements

NASA Technical Reports Server (NTRS)

Cooper, C. V.; Anton, D. L.; Lemkey, F. D.; Nowotny, H.; Bailey, R. S.; Favrow, L. H.; Smeggil, J. G.; Snow, D. B.

1989-01-01

A program was performed to address the mechanical and environmental needs of Stirling engine heater head and regenerator housing components, while reducing the dependence on strategic materials. An alloy was developed which contained no strategic elemental additions per se. The base is iron with additions of manganese, molybdenum, carbon, silicon, niobium, and ferro-chromium. Such an alloy should be producible on a large scale at very low cost. The resulting alloy, designated as NASAUT 4G-Al, contained 15 Mn, 15 Cr, 2 Mo, 1.5 C, 1.0 Si, 1.0 Nb (in weight percent) with a balance of Fe. This alloy was optimized for chemistry, based upon tensile strength, creep-rupture strength, fracture behavior, and fatigue resistance up to 800 C. Alloys were also tested for environmental compatibility. The microstructure and mechanic properties (including hardness) were assessed in the as-cast condition and following several heat treatments, including one designed to simulate a required braze cycle. The alloy was fabricated and characterized in the form of both equiaxed and columnar-grained castings. The columnar grains were produced by directional solidification, and the properties were characterized in both the longitudinal and transverse orientations. The NASAUT 4G-Al alloy was found to be good in cyclic-oxidation resistance and excellent in both hydrogen and hot-corrosion resistance, especially in comparison to the baseline XF-818 alloy. The mechanical properties of yield strength, stress-rupture life, high-cycle-fatigue resistance, and low-cycle-fatigue resistance were good to excellent in comparison to the current alloy for this application, HS-31 (X-40), with precise results depending in a complex manner on grain orientation and temperature. If required, the ductility could be improved by lowering the carbon content.

Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

NASA Astrophysics Data System (ADS)

Bandarenka, Hanna; Prischepa, Sergey L.; Fittipaldi, Rosalba; Vecchione, Antonio; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

2013-02-01

Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.

Low cost silicon-on-ceramic photovoltaic solar cells

NASA Technical Reports Server (NTRS)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Effects of a high-gradient magnetic field on the migratory behavior of primary crystal silicon in hypereutectic Al–Si alloy

PubMed Central

Jin, Fangwei; Ren, Zhongming; Ren, Weili; Deng, Kang; Zhong, Yunbo; Yu, Jianbo

2008-01-01

The migration of primary Si grains during the solidification of Al–18 wt%Si alloy under a high-gradient magnetic field has been investigated experimentally. It was found that under a gradient magnetic field, the primary Si grains migrated toward one end of the specimen, forming a Si-rich layer, and the thickness of the Si-rich layer increased with increasing magnetic flux density. No movement of Si grains was apparent under a magnetic field below 2.3 T. For magnetic fields above 6.6 T, however, the thickness of the Si-rich layer was almost constant. It was shown that the static field also played a role in impeding the movement of the grains. The primary Si grains were refined in the Si layer, even though the primary silicon grains were very dense. The effect of the magnetic flux density on the migratory behavior is discussed. PMID:27877953

Control of Heat and Charge Transport in Nanostructured Hybrid Materials

DTIC Science & Technology

2015-07-21

measurements in our groups have yielded device ZT values of 0.4 on thermoelectric modules consisting of vertically oriented silicon nanowires . This is... nanowires with aspect ratio’s exceeding 10,000. Temperature differences as high as 800 °C are achievable for both types. The bulk nanostructured...thermal conductivity of the silicon nanostructures. Specifically, experiments on an array of 20 nm diameter vertically oriented silicon nanowires have

Sintered rare earth-iron Laves phase magnetostrictive alloy product and preparation thereof

DOEpatents

Malekzadeh, Manoochehr; Pickus, Milton R.

1979-01-01

A sintered rare earth-iron Laves phase magnetostrictive alloy product characterized by a grain oriented morphology. The grain oriented morphology is obtained by magnetically aligning powder particles of the magnetostrictive alloy prior to sintering. Specifically disclosed are grain oriented sintered compacts of Tb.sub.x Dy.sub.1-x Fe.sub.2 and their method of preparation. The present sintered products have enhanced magnetostrictive properties.

Low-temperature silicon thin films for large-area electronics: Device fabrication using soft lithography and laser-crystallization by sequential lateral solidification

NASA Astrophysics Data System (ADS)

Jin, Hyun-Chul

This work demonstrates possible routes for fabricating large-area electronic devices on glass or plastic substrates using low-temperature materials deposition and soft lithographic device patterning. Hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively studied as the semiconducting material for flat panel displays and solar cells. On glass substrates, we have deposited a-Si:H films at a temperature lower than 125°C, and we have used pulsed excimer laser crystallization in the sequential lateral solidification (SLS) regime to fabricate poly-Si films. We use micromolding in capillaries (MIMIC), a form of soft lithography involving micrometer-scale polymer molding, as a means to fabricate amorphous silicon thin-film transistors (TFTs), and photoconductive sensor arrays on both planar and curved substrates. The use of non-planar substrates has captured considerable attention in the field because it would open up new applications and new designs. Field-effect transistors made by SLS poly-Si show excellent mobility and on/off current ratio; however, the microstructure of the material had never been well documented. We determined the microtexture using electron backscattering diffraction (EBSD): the first crystallites formed in the a-Si layer are random; along the direction of the solidification, a strong <100> in-plane orientation quickly develops due to competitive growth and occlusion. The misorientation angle between neighboring grains is also analyzed. A large fraction of the boundaries within the material are low-angle and coincidence site lattice (CSL) types. We discuss the implications of the findings on the defect generation mechanism and on the electrical properties of the films. We have analyzed the electrical properties of SLS poly-Si films on oxidized Si wafer using the pseudo-MOSFET geometry; the majority carrier mobility is extracted from the transconductance. However, the data are non-ideal due to large contact resistance and current spreading. We discuss the future use of these electrical characterization techniques to analyze the properties of individual grain boundaries in thin film Si bicrystals formed by SLS.

Finite-element modelling of thermal micracking in fresh and consolidated marbles

NASA Astrophysics Data System (ADS)

Weiss, T.; Fuller, E.; Siegesmund, S.

2003-04-01

The initial stage of marble weathering is supposed to be controlled by thermal microcracking. Due to the anisotropy of the thermal expansion coefficients of calcite, the main rock forming mineral in marble, stresses are caused which lead to thermally-induced microcracking, especially along the grain boundaries. The so-called "granular disintegration" is a frequent weathering phenomenon observed for marbles. The controlling parameters are the grain size, grain shape and grain orientation. We use a finite-element approach to constrain magnitude and directional dependence of thermal degradation. Therefore, different assumptions are validated including the fracture toughness of the grain boundaries, the effects of the grain-to-grain orientation and bulk lattice preferred orientation (here referred to as texture). The resulting thermal microcracking and bulk rock thermal expansion anisotropy are validated. It is evident that thermal degradation depends on the texture. Strongly textured marbles exhibit a clear directional dependence of thermal degradation and a smaller bulk thermal degradation than randomly oriented ones. The effect of different stone consolidants in the pore space of degraded marble is simulated and its influence on mechanical properties such as tensile strength are evaluated.

Grain orientation in lunar soil

NASA Technical Reports Server (NTRS)

Mahmood, A.; Mitchell, J. K.; Carrier, W. D., III

1974-01-01

Orientation of lunar soil particles in a vertical plane, as seen in the radiographs of core tubes was characterized by preparing orientation diagrams for the different stratigraphic units. Radiographs of double-core drive tubes 64001/64002, 60009/60010, and 60013/60014 were used. The orientation results reinforced the stratigraphic differences. Another source of fabric data was the laboratory-deposited sample 14163,148. The artificial deposition results showed that the grain arrangements were dependent upon the method of deposition. These results from lunar soil and other data from a crushed basalt simulant can be a basis for the inference that lunar soil grain orientation and properties are useful in interpreting lunar surface history.

Combined Near and Far Field High Energy Diffraction Microscopy Dataset for Ti-7Al Tensile Specimen Elastically Loaded In Situ

DOE Data Explorer

Turner, Todd J.; Shade, Paul A; Bernier, Joel V.; Li, Shiu Fai; Schuren, Jay C.; Lind, Jonathan F.; Lienert, Ulrich; Kenesei, Peter; Suter, Robert; Blank, Basil; Almer, Jonathan

2016-01-01

We present both near-field HEDM data that maps out the grain morphology and intragranular crystallographic orientations and far-field HEDM data that provides the grain centroid, grain average crystallographic orientation, and grain average elastic strain tensor for each grain. Finally, we provide a finite element mesh that can be utilized to simulate deformation in the volume of this Ti-7Al specimen.

Mechanism of secondary recrystallization of Goss grains in grain-oriented electrical steel

NASA Astrophysics Data System (ADS)

Hayakawa, Yasuyuki

2017-12-01

Since its invention by Goss in 1934, grain-oriented (GO) electrical steel has been widely used as a core material in transformers. GO exhibits a grain size of over several millimeters attained by secondary recrystallization during high-temperature final batch annealing. In addition to the unusually large grain size, the crystal direction in the rolling direction is aligned with <001>, which is the easy magnetization axis of α-iron. Secondary recrystallization is the phenomenon in which a certain very small number of {110}<001> (Goss) grains grow selectively (about one in 106 primary grains) at the expense of many other primary recrystallized grains. The question of why the Goss orientation is exclusively selected during secondary recrystallization has long been a main research subject in this field. The general criterion for secondary recrystallization is a small and uniform primary grain size, which is achieved through the inhibition of normal grain growth by fine precipitates called inhibitors. This paper describes several conceivable mechanisms of secondary recrystallization of Goss grains mainly based on the selective growth model.

Mechanism of secondary recrystallization of Goss grains in grain-oriented electrical steel

PubMed Central

Hayakawa, Yasuyuki

2017-01-01

Abstract Since its invention by Goss in 1934, grain-oriented (GO) electrical steel has been widely used as a core material in transformers. GO exhibits a grain size of over several millimeters attained by secondary recrystallization during high-temperature final batch annealing. In addition to the unusually large grain size, the crystal direction in the rolling direction is aligned with <001>, which is the easy magnetization axis of α-iron. Secondary recrystallization is the phenomenon in which a certain very small number of {110}<001> (Goss) grains grow selectively (about one in 106 primary grains) at the expense of many other primary recrystallized grains. The question of why the Goss orientation is exclusively selected during secondary recrystallization has long been a main research subject in this field. The general criterion for secondary recrystallization is a small and uniform primary grain size, which is achieved through the inhibition of normal grain growth by fine precipitates called inhibitors. This paper describes several conceivable mechanisms of secondary recrystallization of Goss grains mainly based on the selective growth model. PMID:28804524

Mechanism of secondary recrystallization of Goss grains in grain-oriented electrical steel.

PubMed

Hayakawa, Yasuyuki

2017-01-01

Since its invention by Goss in 1934, grain-oriented (GO) electrical steel has been widely used as a core material in transformers. GO exhibits a grain size of over several millimeters attained by secondary recrystallization during high-temperature final batch annealing. In addition to the unusually large grain size, the crystal direction in the rolling direction is aligned with <001>, which is the easy magnetization axis of α-iron. Secondary recrystallization is the phenomenon in which a certain very small number of {110}<001> (Goss) grains grow selectively (about one in 10 6 primary grains) at the expense of many other primary recrystallized grains. The question of why the Goss orientation is exclusively selected during secondary recrystallization has long been a main research subject in this field. The general criterion for secondary recrystallization is a small and uniform primary grain size, which is achieved through the inhibition of normal grain growth by fine precipitates called inhibitors. This paper describes several conceivable mechanisms of secondary recrystallization of Goss grains mainly based on the selective growth model.

The role of grain size in He bubble formation: Implications for swelling resistance

DOE PAGES

El-Atwani, Osman; Nathaniel, II, James E.; Leff, Asher C.; ...

2016-12-07

Here, nanocrystalline metals are postulated as radiation resistant materials due to their high defect and particle (e.g. Helium) sink density. Here, the performance of nanocrystalline iron films is investigated in-situ in a transmission electron microscope (TEM) using He irradiation at 700 K. Automated crystal orientation mapping is used in concert with in-situ TEM to explore the role of grain orientation and grain boundary character on bubble density trends. Bubble density as a function of three key grain size regimes is demonstrated. While the overall trend revealed an increase in bubble density up to a saturation value, grains with areas rangingmore » from 3000 to 7500 nm 2 show a scattered distribution. An extrapolated swelling resistance based on bubble size and areal density indicated that grains with sizes less than 2000 nm 2 possess the greatest apparent resistance. Moreover, denuded zones are found to be independent of grain size, grain orientation, and grain boundary misorientation angle.« less

Silicon Nanowire Growth at Chosen Positions and Orientations

NASA Technical Reports Server (NTRS)

Getty, Stephanie A.

2009-01-01

It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays. Nanowires made from silicon and perhaps other semiconductors hold substantial promise for integration into highly miniaturized sensors, field-effect transistors, optoelectronic devices, and other electronic devices. Like bulk semiconductors, inorganic semiconducting nanowires are characterized by electronic energy bandgaps that render them suitable as means of modulating or controlling electronic signals through electrostatic gating, in response to incident light, or in response to molecules of interest close to their surfaces. There is now potential for fabricating arrays of uniform, individually electronically addressable nanowires tailored to specific applications. The method involves formation of metal catalytic particles at the desired positions on a substrate, followed by heating the substrate in the presence of silane gas. The figure illustrates an example in which a substrate includes a silicon dioxide surface layer that has been etched into an array of pillars and the catalytic (in this case, gold) particles have been placed on the right-facing sides of the pillars. The catalytic thermal decomposition of the silane to silicon and hydrogen causes silicon columns (the desired nanowires) to grow outward from the originally catalyzed spots on the substrate, carrying the catalytic particles at their tips. Thus, the position and orientation of each silicon nanowire is determined by the position of its originally catalyzed spot on the substrate surface, and the orientation of the nanowire is perpendicular to the substrate surface at the originally catalyzed spot.

Subsurface Grain Morphology Reconstruction by Differential Aperture X-ray Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eisenlohr, Philip; Shanthraj, Pratheek; Vande Kieft, Brendan R.

A multistep, non-destructive grain morphology reconstruction methodology that is applicable to near-surface volumes is developed and tested on synthetic grain structures. This approach probes the subsurface crystal orientation using differential aperture x-ray microscopy on a sparse grid across the microstructure volume of interest. Resulting orientation data are clustered according to proximity in physical and orientation space and used as seed points for an initial Voronoi tessellation to (crudely) approximate the grain morphology. Curvature-driven grain boundary relaxation, simulated by means of the Voronoi implicit interface method, progressively improves the reconstruction accuracy. The similarity between bulk and readily accessible surface reconstruction errormore » provides an objective termination criterion for boundary relaxation.« less

The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

NASA Technical Reports Server (NTRS)

Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

2003-01-01

CuInS2 was deposited by spray pyrolysis using single-source precursors synthesized in-house. Films with either (112) or (204/220) preferred orientation always showed Cu-rich and In-rich composition respectively. The In-rich (204/220)-oriented films always contained a secondary phase evaluated as an In-rich compound, and the hindrance of (112)-oriented grain growth was confirmed by glancing angle X-ray diffraction. In conclusion, only the Cu-rich (112)-oriented films with dense columnar grains can be prepared without the secondary In-rich compound. The effect of extra Cu on the grain size and the solar cell results will be also presented.

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

Analyzing Dirac Cone and Phonon Dispersion in Highly Oriented Nanocrystalline Graphene.

PubMed

Nai, Chang Tai; Xu, Hai; Tan, Sherman J R; Loh, Kian Ping

2016-01-26

Chemical vapor deposition (CVD) is one of the most promising growth techniques to scale up the production of monolayer graphene. At present, there are intense efforts to control the orientation of graphene grains during CVD, motivated by the fact that there is a higher probability for oriented grains to achieve seamless merging, forming a large single crystal. However, it is still challenging to produce single-crystal graphene with no grain boundaries over macroscopic length scales, especially when the nucleation density of graphene nuclei is high. Nonetheless, nanocrystalline graphene with highly oriented grains may exhibit single-crystal-like properties. Herein, we investigate the spectroscopic signatures of graphene film containing highly oriented, nanosized grains (20-150 nm) using angle-resolved photoemission spectroscopy (ARPES) and high-resolution electron energy loss spectroscopy (HREELS). The robustness of the Dirac cone, as well as dispersion of its phonons, as a function of graphene's grain size and before and after film coalescence, was investigated. In view of the sensitivity of atomically thin graphene to atmospheric adsorbates and intercalants, ARPES and HREELS were also used to monitor the changes in spectroscopic signatures of the graphene film following exposure to the ambient atmosphere.

Isotopic Composition of Barium in Single Presolar Silicon Carbide Grains

NASA Technical Reports Server (NTRS)

Savina, M. R.; Tripa, C. E.; Pellin, M. J.; Davis, A. M.; Clayton, R. N.; Lewis, R. S.; Amari, S.

2002-01-01

We have measured Ba isotope distributions in individual presolar SiC grains. We find that the Ba isotopic composition in mainstream SiC grains is consistent with models of nucleosynthesis in low to intermediate mass asymptotic giant branch (AGB) stars. Additional information is contained in the original extended abstract.

Processing and testing of high toughness silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Tikare, Veena; Sanders, William A.; Choi, Sung R.

1993-01-01

High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Strain hardening and fracture behavior during tension of directionally solidified high-nitrogen austenitic steel

NASA Astrophysics Data System (ADS)

Maier, Galina; Astafurova, Elena; Melnikov, Eugene; Moskvina, Valentina; Galchenko, Nina

2017-12-01

The effect of grain orientation relative to tensile load on the strain hardening behavior and fracture mechanism of directionally solidified high-nitrogen steel Fe-20Cr-22Mn-1.5V-0.2C-0.6N (in wt %) was studied. The tensile samples oriented along the longitudinal direction of columnar grains demonstrated the improved mechanical properties compared to specimens with the transversal directions of columnar grains: the values of tensile strength and strain-to-fracture were as high as 1080 MPa and 22%, respectively, for tension along the columnar grains and 870 MPa and 11%, respectively, for the tension transversal to the columnar grains. The change in the grain orientation relative to the tensile load varies a fracture mode of the steel. The fraction of the transgranular fracture was higher in the samples with longitudinal directions of the columnar grains compared to the transversal ones.

The relevance of grain dissection for grain size reduction in polar ice: insights from numerical models and ice core microstructure analysis

NASA Astrophysics Data System (ADS)

Steinbach, Florian; Kuiper, Ernst-Jan N.; Eichler, Jan; Bons, Paul D.; Drury, Martyn R.; Griera, Albert; Pennock, Gill M.; Weikusat, Ilka

2017-09-01

The flow of ice depends on the properties of the aggregate of individual ice crystals, such as grain size or lattice orientation distributions. Therefore, an understanding of the processes controlling ice micro-dynamics is needed to ultimately develop a physically based macroscopic ice flow law. We investigated the relevance of the process of grain dissection as a grain-size-modifying process in natural ice. For that purpose, we performed numerical multi-process microstructure modelling and analysed microstructure and crystallographic orientation maps from natural deep ice-core samples from the North Greenland Eemian Ice Drilling (NEEM) project. Full crystallographic orientations measured by electron backscatter diffraction (EBSD) have been used together with c-axis orientations using an optical technique (Fabric Analyser). Grain dissection is a feature of strain-induced grain boundary migration. During grain dissection, grain boundaries bulge into a neighbouring grain in an area of high dislocation energy and merge with the opposite grain boundary. This splits the high dislocation-energy grain into two parts, effectively decreasing the local grain size. Currently, grain size reduction in ice is thought to be achieved by either the progressive transformation from dislocation walls into new high-angle grain boundaries, called subgrain rotation or polygonisation, or bulging nucleation that is assisted by subgrain rotation. Both our time-resolved numerical modelling and NEEM ice core samples show that grain dissection is a common mechanism during ice deformation and can provide an efficient process to reduce grain sizes and counter-act dynamic grain-growth in addition to polygonisation or bulging nucleation. Thus, our results show that solely strain-induced boundary migration, in absence of subgrain rotation, can reduce grain sizes in polar ice, in particular if strain energy gradients are high. We describe the microstructural characteristics that can be used to identify grain dissection in natural microstructures.

Microstructure characterization based on the type of deformed grains in cold-rolled, Cu-added, bake-hardenable steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, J.S.; Kim, S.I.; Choi, S.-H., E-mail: shihoon@sunchon.ac.kr

2014-06-01

The electron backscatter diffraction technique has been used to characterize the microstructure of deformed grains in cold-rolled, Cu-added, bake-hardenable steel. A new scheme based on the kind and number of average orientations, as determined from a unique grain map of the deformed grains, was developed in order to classify deformed grains by type. The α-fiber components, γ-fiber components and random orientations, those which could not be assigned to either γ-fiber or α-fiber components, were used to define the average orientation of unique grains within individual deformed grains. The microstructures of deformed grains in as-rolled specimens were analyzed based on themore » Taylor factor, stored energy, and misorientation. The relative levels and distributions of the Taylor factor, the stored energy and the misorientation were examined in terms of the types of deformed grains. - Highlights: • We characterized the microstructure of Cu-added BH steel using EBSD. • A new scheme was developed in order to classify deformed grains by type. • Stored energy and misorientation are strongly dependent on the type of deformed grains. • Microstructure was examined in terms of the types of deformed grains.« less

Pure s-Process Molybdenum Found in PreSolar Silicon Carbide Grains

NASA Astrophysics Data System (ADS)

Stephan, T.; Trappitsch, R.; Boehnke, P.; Davis, A. M.; Pellin, M. J.; Pardo, O. S.

2017-07-01

Molybdenum isotopes analyzed with high precision in 18 presolar SiC grains using CHILI (Chicago Instrument for Laser Ionization) reflect variability of conditions in stellar environments during s-process nucleosynthesis.

{1 1 1} facet growth laws and grain competition during silicon crystallization

NASA Astrophysics Data System (ADS)

Stamelou, V.; Tsoutsouva, M. G.; Riberi-Béridot, T.; Reinhart, G.; Regula, G.; Baruchel, J.; Mangelinck-Noël, N.

2017-12-01

Directional solidification from mono-crystalline Si seeds having different orientations along the growth direction is studied. Due to the frequent twinning phenomenon, new grains soon nucleate during growth. The grain competition is then characterized in situ by imaging the dynamic evolution of the grain boundaries and of the corresponding grain boundary grooves that are formed at the solid-liquid interface. To perform this study, an experimental investigation based on Bridgman solidification technique coupled with in situ X-ray imaging is conducted in an original device: GaTSBI (Growth at high Temperature observed by X-ray Synchrotron Beam Imaging). Imaging characterisation techniques using X-ray synchrotron radiation at ESRF (European Synchrotron Radiation Facility, Grenoble, France) are applied during the solidification to study the growth dynamics. Facetted/facetted grain boundary grooves only are studied due to their importance in the grain competition because of their implication in the twinning mechanism. The maximum undercooling inside the groove is calculated from the groove depth knowing the local temperature gradient. Additionally, thanks to dynamic X-ray images, the global solid-liquid interface growth rate and the normal growth rate of the {1 1 1} facets existing at the grooves and at the edges are measured. From these measurements, experimental growth laws that correlate the normal velocity of the {1 1 1} facets with the maximum undercooling of the groove are extracted and compared to existing theoretical models. Finally, the experimental laws found for the contribution to the undercooling of the {1 1 1} facets are in good agreement with the theoretical model implying nucleation and growth eased by the presence of dislocations. Moreover, it is shown that, for the same growth parameters, the undercooling at the level of the facets (always lower than 1 K) is higher at the edges so that there is a higher probability of twin nucleation at the edges which is in agreement with the grain structure development characterised in the present experiments as well as in the literature.

Depth profiling of high energy nitrogen ions implanted in the <1 0 0>, <1 1 0> and randomly oriented silicon crystals

NASA Astrophysics Data System (ADS)

Erić, M.; Petrović, S.; Kokkoris, M.; Lagoyannis, A.; Paneta, V.; Harissopulos, S.; Telečki, I.

2012-03-01

This work reports on the experimentally obtained depth profiles of 4 MeV 14N2+ ions implanted in the <1 0 0>, <1 1 0> and randomly oriented silicon crystals. The ion fluence was 1017 particles/cm2. The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of 14N(d,α0)12C and 14N(d,α1)12C nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen "bubble" formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.

Different slip systems controlling crystallographic preferred orientation and intracrystalline deformation of amphibole in mylonites from the Neyriz mantle diapir, Iran

NASA Astrophysics Data System (ADS)

Elyaszadeh, Ramin; Prior, David J.; Sarkarinejad, Khalil; Mansouri, Hadiseh

2018-02-01

A deformed layered gabbro and a mylonitic gabbro sample from the marginal shear zone of the Neyriz mantle diapir in Iran were analyzed using electron backscatter diffraction (EBSD). Both samples have the common amphibole crystallographic preferred orientation (CPO) in which (100) lies perpendicular to foliation and <001> parallel to lineation. Amphibole grains in the layered gabbro sample have little internal deformation, whereas in the mylonitic gabbro sample the amphibole grains are strongly distorted and contain low angle grain boundaries. There is a subtle change in CPO as a function of grain size in the mylonitic gabbro. Coarse grains (porphyroclasts) have a (100) <001> CPO oriented with the main foliation reference frame whilst fine grains have a (100) <001> CPO oriented with the C‧ shear bands. Detailed analysis of porphyroclast distortions and subgrain boundary trace analysis suggests that hard slip systems, most particularly (110) <1-10> control intracrystalline deformation. Schmid factor analysis suggest that these slip systems are not involved in foliation formation but are linked kinematically to C‧ shear bands. It is unlikely that the slip systems that control intracrystalline deformation are important in CPO formation. We interpret that subgrain rotation recrystallization lead to grain size reduction and the elongate recrystallized grains were rotated towards the C‧ shear bands by grain boundary sliding. This rigid body rotation, possibly in combination with easy slip on (100) <001> are considered the main cause of CPO formation. Amphibole zonation patterns in the layered gabbro sample suggest that oriented growth of amphibole may have contributed to CPO.

Anisotropy model for modern grain oriented electrical steel based on orientation distribution function

NASA Astrophysics Data System (ADS)

Jiang, Fan; Rossi, Mathieu; Parent, Guillaume

2018-05-01

Accurately modeling the anisotropic behavior of electrical steel is mandatory in order to perform good end simulations. Several approaches can be found in the literature for that purpose but the more often those methods are not able to deal with grain oriented electrical steel. In this paper, a method based on orientation distribution function is applied to modern grain oriented laminations. In particular, two solutions are proposed in order to increase the results accuracy. The first one consists in increasing the decomposition number of the cosine series on which the method is based. The second one consists in modifying the determination method of the terms belonging to this cosine series.

Theoretical and experimental analyses to determine the effects of crystal orientation and grain size on the thermoelectric properties of oblique deposited bismuth telluride thin films

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Satake, Yuji; Takashiri, Masayuki

2018-06-01

The effects of crystal orientation and grain size on the thermoelectric properties of Bi2Te3 thin films were investigated by conducting experimental and theoretical analyses. To vary the crystal orientation and grain size, we performed oblique deposition, followed by thermal annealing treatment. The crystal orientation decreased as the oblique angle was increased, while the grain size was not changed significantly. The thermoelectric properties were measured at room temperature. A theoretical analysis was performed using a first principles method based on density functional theory. Then the semi-classical Boltzmann transport equation was used in the relaxation time approximation, with the effect of grain size included. Furthermore, the effect of crystal orientation was included in the calculation based on a simple semi-experimental model. A maximum power factor of 11.6 µW/(cm·K2) was obtained at an oblique angle of 40°. The calculated thermoelectric properties were in very good agreement with the experimentally measured values.

Optical method for the determination of grain orientation in films

DOEpatents

Maris, Humphrey J.

2001-01-01

A method for the determination of grain orientation in a film sample is provided comprising the steps of measuring a first transient optical response of the film and determining the contribution to the transient optical response arising from a change in the energy distribution of the electrons in the sample, determining the contribution to the transient optical response arising from a propagating strain pulse within the sample, and determining the contribution to the transient optical response arising from a change in sample temperature of the sample. The grain orientation of the sample may be determined using the contributions to the transient optical response arising from the change in the energy distribution of the electrons, the propagating strain pulse, and the change in sample temperature. Additionally, a method for determination of the thickness of a film sample is provided. The grain orientation of the sample is first determined. The grain orientation, together with the velocity of sound and a propagation time of a strain pulse through the sample are then used to determine the thickness of the film sample.

Optical method for the determination of grain orientation in films

DOEpatents

Maris, Humphrey J.

2003-05-13

A method for the determination of grain orientation in a film sample is provided comprising the steps of measuring a first transient optical response of the film and determining the contribution to the transient optical response arising from a change in the energy distribution of the electrons in the sample, determining the contribution to the transient optical response arising from a propagating strain pulse within the sample, and determining the contribution to the transient optical response arising from a change in sample temperature of the sample. The grain orientation of the sample may be determined using the contributions to the transient optical response arising from the change in the energy distribution of the electrons, the propagating strain pulse, and the change in sample temperature. Additionally, a method for determination of the thickness of a film sample is provided. The grain orientation of the sample is first determined. The grain orientation, together with the velocity of sound and a propagation time of a strain pulse through the sample are then used to determine the thickness of the film sample.

Crystal regularity with high-resolution synchrotron X-radiation diffraction imaging

NASA Technical Reports Server (NTRS)

Steiner, Bruce; Dobbyn, Ronald C.

1991-01-01

New, high-resolution sources of X-radiation such as monochromatic synchrotron radiation beams with subarcsec divergence allow observation of regularities in a range of crystals with sufficient clarity for comprehensive analyses, whose results can deepen understanding of the nature of various crystal irregularities, their sources, and their effects on device performance. An account is presented of the results thus achievable with irregularities encountered in lattice orientation and strain, grain and subgrain boundaries, dislocations, domain boundaries, additional phases, and surface scratches. Significant achievements to date encompass the observation of critical anomalies in lead tin telluride, the reconciliation of disparate observations of GaAs, the determination of the performance effects of irregularities in mercuric iodide, and the characterization of the origins of crystal growth in bismuth silicon oxide.

Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

de Dieu Mugiraneza, Jean; Miyahira, Tomoyuki; Sakamoto, Akinori; Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Itoh, Taketsugu

2010-12-01

The microcrystalline phase obtained by adopting a two-step rapid thermal annealing (RTA) process for rf-sputtered silicon films deposited on thermally durable glass was characterized. The optical properties, surface morphology, and internal stress of the annealed Si films are investigated. As the thermally durable glass substrate allows heating of the deposited films at high temperatures, micro-polycrystalline silicon (micro-poly-Si) films of uniform grain size with a smooth surface and a low internal stress could be obtained after annealing at 750 °C. The thermal stress in the Si films was 100 times lower than that found in the films deposited on conventional glass. Uniform grains with an average grain size of 30 nm were observed by transmission electron microscopy (TEM) in the films annealed at 800 °C. These micro-poly-Si films have potential application for fabrication of uniform and reliable thin film transistors (TFTs) for large scale active-matrix organic light emitting diode (AMOLED) displays.

Subsurface Grain Morphology Reconstruction by Differential Aperture X-ray Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eisenlohr, Philip; Shanthraj, Pratheek; Vande Kieft, Brendan R.

A multistep, non-destructive grain morphology reconstruction methodology that is applicable to near-surface volumes is developed and tested on synthetic grain structures. This approach probes the subsurface crystal orientation using differential aperture X-ray microscopy (DAXM) on a sparse grid across the microstructure volume of interest. Resulting orientation data is clustered according to proximity in physical and orientation space and used as seed points for an initial Voronoi tessellation to (crudely) approximate the grain morphology. Curvature-driven grain boundary relaxation, simulated by means of the Voronoi Implicit Interface Method (VIIM), progressively improves the reconstruction accuracy. The similarity between bulk and readily accessible surfacemore » reconstruction error provides an objective termination criterion for boundary relaxation.« less

SULFUR ISOTOPIC COMPOSITIONS OF SUBMICROMETER SiC GRAINS FROM THE MURCHISON METEORITE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Yuchen; Zinner, Ernst; Gallino, Roberto

2015-02-01

We report C, Si, N, S, Mg-Al, and Ca-Ti isotopic compositions of presolar silicon carbide (SiC) grains from the SiC-rich KJE size fraction (0.5-0.8 μm) of the Murchison meteorite. One thousand one hundred thirteen SiC grains were identified based on their C and Si isotopic ratios. Mainstream, AB, C, X, Y, and Z subtypes of SiC, and X-type silicon nitride (Si{sub 3}N{sub 4}) account for 81.4%, 5.7%, 0.1%, 1.5%, 5.8%, 4.9%, and 0.4%, respectively. Twenty-five grains with unusual Si isotopic ratios, including one C grain, 16 X grains, 1 Y grain, 5 Z grains, and 2 X-type Si{sub 3}N{sub 4} grainsmore » were selected for N, S, Mg-Al, and Ca-Ti isotopic analysis. The C grain is highly enriched in {sup 29}Si and {sup 30}Si (δ{sup 29}Si = 1345‰ ± 19‰, δ{sup 30}Si = 1272‰ ± 19‰). It has a huge {sup 32}S excess, larger than any seen before, and larger than that predicted for the Si/S supernova (SN) zone, providing evidence against the elemental fractionation model by Hoppe et al. Two SN models investigated here present a more satisfying explanation in terms of a radiogenic origin of {sup 32}S from the decay of short-lived {sup 32}Si (τ{sub 1/2} = 153 yr). Silicon-32 as well as {sup 29}Si and {sup 30}Si can be produced in SNe by short neutron bursts; evidence for initial {sup 44}Ti (τ{sub 1/2} = 60 yr) in the C grain is additional evidence for an SN origin. The X grains have marginal {sup 32}S excesses, much smaller than expected from their large {sup 28}Si excesses. Similarly, the Y and Z grains do not show the S-isotopic anomalies expected from their large Si isotopic anomalies. Low intrinsic S contents and contamination with isotopically normal S are the most likely explanations.« less

Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian

2014-07-21

Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. Itmore » is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.« less

Fabrication of MEMS components using ultrafine-grained aluminium alloys

NASA Astrophysics Data System (ADS)

Qiao, Xiao Guang; Gao, Nong; Moktadir, Zakaria; Kraft, Michael; Starink, Marco J.

2010-04-01

A novel process for the fabrication of a microelectromechanical systems (MEMS) metallic component with features smaller than 10 µm and high thermal conductivity was investigated. This may be applied to new or improved microscale components, such as (micro-) heat exchangers. In the first stage of processing, equal channel angular pressing (ECAP) was employed to refine the grain size of commercial purity aluminium (Al-1050) to the ultrafine-grained (UFG) material. Embossing was conducted using a micro silicon mould fabricated by deep reactive ion etching (DRIE). Both cold embossing and hot embossing were performed on the coarse-grained and UFG Al-1050. Cold embossing on UFG Al-1050 led to a partially transferred pattern from the micro silicon mould and high failure rate of the mould. Hot embossing on UFG Al-1050 provided a smooth embossed surface with a fully transferred pattern and a low failure rate of the mould, while hot embossing on the coarse-grained Al-1050 resulted in a rougher surface with shear bands.

The grain size(s) of Black Hills Quartzite deformed in the dislocation creep regime

NASA Astrophysics Data System (ADS)

Heilbronner, Renée; Kilian, Rüdiger

2017-10-01

General shear experiments on Black Hills Quartzite (BHQ) deformed in the dislocation creep regimes 1 to 3 have been previously analyzed using the CIP method (Heilbronner and Tullis, 2002, 2006). They are reexamined using the higher spatial and orientational resolution of EBSD. Criteria for coherent segmentations based on c-axis orientation and on full crystallographic orientations are determined. Texture domains of preferred c-axis orientation (Y and B domains) are extracted and analyzed separately. Subdomains are recognized, and their shape and size are related to the kinematic framework and the original grains in the BHQ. Grain size analysis is carried out for all samples, high- and low-strain samples, and separately for a number of texture domains. When comparing the results to the recrystallized quartz piezometer of Stipp and Tullis (2003), it is found that grain sizes are consistently larger for a given flow stress. It is therefore suggested that the recrystallized grain size also depends on texture, grain-scale deformation intensity, and the kinematic framework (of axial vs. general shear experiments).

Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

NASA Technical Reports Server (NTRS)

Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

1984-01-01

Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

Thermal conductivity of nanocrystalline silicon: importance of grain size and frequency-dependent mean free paths.

PubMed

Wang, Zhaojie; Alaniz, Joseph E; Jang, Wanyoung; Garay, Javier E; Dames, Chris

2011-06-08

The thermal conductivity reduction due to grain boundary scattering is widely interpreted using a scattering length assumed equal to the grain size and independent of the phonon frequency (gray). To assess these assumptions and decouple the contributions of porosity and grain size, five samples of undoped nanocrystalline silicon have been measured with average grain sizes ranging from 550 to 64 nm and porosities from 17% to less than 1%, at temperatures from 310 to 16 K. The samples were prepared using current activated, pressure assisted densification (CAPAD). At low temperature the thermal conductivities of all samples show a T(2) dependence which cannot be explained by any traditional gray model. The measurements are explained over the entire temperature range by a new frequency-dependent model in which the mean free path for grain boundary scattering is inversely proportional to the phonon frequency, which is shown to be consistent with asymptotic analysis of atomistic simulations from the literature. In all cases the recommended boundary scattering length is smaller than the average grain size. These results should prove useful for the integration of nanocrystalline materials in devices such as advanced thermoelectrics.

Micromachined cutting blade formed from {211}-oriented silicon

DOEpatents

Fleming, James G.; Sniegowski, Jeffry J.; Montague, Stephen

2003-09-09

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

Micromachined cutting blade formed from {211}-oriented silicon

DOEpatents

Fleming, James G [Albuquerque, NM; Fleming, legal representative, Carol; Sniegowski, Jeffry J [Tijeras, NM; Montague, Stephen [Albuquerque, NM

2011-08-09

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

High-temperature effect of hydrogen on sintered alpha-silicon carbide

NASA Technical Reports Server (NTRS)

Hallum, G. W.; Herbell, T. P.

1986-01-01

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrision at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

Determination and controlling of grain structure of metals after laser incidence: Theoretical approach

PubMed Central

Dezfoli, Amir Reza Ansari; Hwang, Weng-Sing; Huang, Wei-Chin; Tsai, Tsung-Wen

2017-01-01

There are serious questions about the grain structure of metals after laser melting and the ways that it can be controlled. In this regard, the current paper explains the grain structure of metals after laser melting using a new model based on combination of 3D finite element (FE) and cellular automaton (CA) models validated by experimental observation. Competitive grain growth, relation between heat flows and grain orientation and the effect of laser scanning speed on final micro structure are discussed with details. Grains structure after laser melting is founded to be columnar with a tilt angle toward the direction of the laser movement. Furthermore, this investigation shows that the grain orientation is a function of conduction heat flux at molten pool boundary. Moreover, using the secondary laser heat source (SLHS) as a new approach to control the grain structure during the laser melting is presented. The results proved that the grain structure can be controlled and improved significantly using SLHS. Using SLHS, the grain orientation and uniformity can be change easily. In fact, this method can help us to produce materials with different local mechanical properties during laser processing according to their application requirements. PMID:28134347

Grain orientations and grain boundaries in tungsten nonotendril fuzz grown under divertor-like conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parish, Chad M.; Wang, Kun; Doerner, Russel P.

2016-09-19

We grew nanotendril “fuzz” on tungsten via plasma exposure and performed transmission Kikuchi diffraction (tKD) in scanning electron microscopy of isolated nanotendrils. 900 °C, 10 23 He/m 2sec, 4 × 10 26 He/m 2 exposure of tungsten produced a deep and fully developed nanotendril mat. tKD of isolated nanotendrils indicated that there was no preferred crystallographic direction oriented along the long axes of the tendrils, and the grain boundary character showed slightly preferential orientations. In conclusion, tendril growth is sufficiently non-equilibrium to prevent any preference of growth direction to manifest measurably, and that new high-angle boundaries (with new grains andmore » grain-growth axes) nucleate randomly along the tendrils during growth.« less

Transmutation doping of silicon solar cells

NASA Technical Reports Server (NTRS)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

1991-01-01

A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

Etching process for improving the strength of a laser-machined silicon-based ceramic article

DOEpatents

Copley, S.M.; Tao, H.; Todd-Copley, J.A.

1991-06-11

A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

In Situ Characterization of Twin Nucleation in Pure Ti Using 3D-XRD

NASA Astrophysics Data System (ADS)

Bieler, Thomas R.; Wang, Leyun; Beaudoin, Armand J.; Kenesei, Peter; Lienert, Ulrich

2014-01-01

A small tensile specimen of grade 1 commercially pure titanium was deformed to a few percent strain with concurrent synchrotron X-ray diffraction measurements to identify subsurface {102} twin nucleation events. This sample was from the same piece of material in which a prior study showed that twin nucleation stimulated by slip transfer across a grain boundary accounted for many instances of twin nucleation. The sample had a strong c-axis texture of about eight times random aligned with the tensile axis. After 1.5 pct tensile strain, three twin nucleation events were observed in grains where the c-axis was nearly parallel to the tensile direction. Far-field 3-D X-ray diffraction data were analyzed to obtain the positional center of mass, the average lattice strain, and stress tensors in each grain and twin. In one case where the parent grain was mostly surrounded by hard grain orientations, the twin system with the highest resolved shear stress (RSS) among the six {102} twin variants was activated and the stress in the parent grain decreased after twin nucleation. In two other parent grains with a majority of softer neighboring grain orientations, the observed twins did not occur on the twin system with the highest RSS. Their nucleation could be geometrically attributed to slip transfer from neighboring grains with geometrically favorable basal slip systems, and the stress in the parent grain increased after twin nucleation. In all three twin events, the stress in the twin was 10 to 30 pct lower than the stress in the parent grain, indicating load partitioning between the hard-oriented parent grain and the soft-oriented twin.

Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K0.5Bi0.5TiO3-BaTiO3-Na0.5Bi0.5TiO3 piezoelectric materials

PubMed Central

Maurya, Deepam; Zhou, Yuan; Wang, Yaojin; Yan, Yongke; Li, Jiefang; Viehland, Dwight; Priya, Shashank

2015-01-01

We synthesized grain-oriented lead-free piezoelectric materials in (K0.5Bi0.5TiO3-BaTiO3-xNa0.5Bi0.5TiO3 (KBT-BT-NBT) system with high degree of texturing along the [001]c (c-cubic) crystallographic orientation. We demonstrate giant field induced strain (~0.48%) with an ultra-low hysteresis along with enhanced piezoelectric response (d33 ~ 190pC/N) and high temperature stability (~160°C). Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) results demonstrate smaller size highly ordered domain structure in grain-oriented specimen relative to the conventional polycrystalline ceramics. The grain oriented specimens exhibited a high degree of non-180° domain switching, in comparison to the randomly axed ones. These results indicate the effective solution to the lead-free piezoelectric materials. PMID:25716551

Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K₀̣₅Bi₀̣₅TiO₃-BaTiO₃-Na₀̣₅Bi₀̣₅TiO₃ piezoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, Deepam; Zhou, Yuan; Wang, Yaojin

2015-02-26

We synthesized grain-oriented lead-free piezoelectric materials in (K₀̣₅Bi₀̣₅TiO₃-BaTiO₃-xNa₀̣₅Bi₀̣₅TiO₃ (KBT-BT-NBT) system with high degree of texturing along the [001]c (c-cubic) crystallographic orientation. We demonstrate giant field induced strain (~0.48%) with an ultra-low hysteresis along with enhanced piezoelectric response (d₃₃ ~ 190pC/N) and high temperature stability (~160°C). Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) results demonstrate smaller size highly ordered domain structure in grain-oriented specimen relative to the conventional polycrystalline ceramics. The grain oriented specimens exhibited a high degree of non-180° domain switching, in comparison to the randomly axed ones. These results indicate the effective solution to the lead-free piezoelectricmore » materials.« less

Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Sabrina N.; Zhai, Yao; van der Zande, Arend M.

Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentallymore » demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.« less

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Continuous method for manufacturing grain-oriented magnetostrictive bodies

DOEpatents

Gibson, Edwin D.; Verhoeven, John D.; Schmidt, Frederick A.; McMasters, O. Dale

1988-01-01

The invention comprises a continuous casting and crystallization method for manufacturing grain-oriented magnetostrictive bodies. A magnetostrictive alloy is melted in a crucible having a bottom outlet. The melt is discharged through the bottom of the crucible and deposited in an elongated mold. Heat is removed from the deposited melt through the lower end portion of the mold to progressively solidify the melt. The solid-liquid interface of the melt moves directionally upwardly from the bottom to the top of the mold, to produce the axial grain orientation.

Experimental study of grain interactions on rolling texture development in face-centered cubic metals

NASA Astrophysics Data System (ADS)

Kumar Ray, Atish

There exists considerable debate in the texture community about whether grain interactions are a necessary factor to explain the development of deformation textures in polycrystalline metals. Computer simulations indicate that grain interactions play a significant role, while experimental evidence shows that the material type and starting orientation are more important in the development of texture and microstructure. A balanced review of the literature on face-centered cubic metals shows that the opposing viewpoints have developed due to the lack of any complete experimental study which considers both the intrinsic (material type and starting orientation) and extrinsic (grain interaction) factors. In this study, a novel method was developed to assemble ideally orientated crystalline aggregates in 99.99% aluminum (Al) or copper (Cu) to experimentally evaluate the effect of grain interactions on room temperature deformation texture. Ideal orientations relevant to face-centered cubic rolling textures, Cube {100} <001>, Goss {110} <001>, Brass {110} <11¯2> and Copper {112} <111¯> were paired in different combinations and deformed by plane strain compression to moderate strain levels of 1.0 to 1.5. Orientation dependent mechanical behavior was distinguishable from that of the neighbor-influenced behavior. In interacting crystals the constraint on the rolling direction shear strains (gammaXY , gammaXZ) was found to be most critical to show the effect of interactions via the evolution of local microstructure and microtexture. Interacting crystals with increasing deformations were observed to gradually rotate towards the S-component, {123} <634>. Apart from the average lattice reorientations, the interacting crystals also developed strong long-range orientation gradients inside the bulk of the crystal, which were identified as accumulating misorientations across the deformation boundaries. Based on a statistical procedure using quaternions, the orientation and interaction related heterogeneous deformations were characterized by three principal component vectors and their respective eigenvalues for both the orientation and misorientation distributions. For the case of a medium stacking fault energy metal like Cu, the texture and microstructure development depends wholly on the starting orientations. Microstructural instabilities in Cu are explained through a local slip clustering process, and the possible role of grain interactions on such instabilities is proposed. In contrast, the texture and microstructure development in a high stacking fault energy metal like Al is found to be dependent on the grain interactions. In general, orientation, grain interaction and material type were found to be key factors in the development of rolling textures in face-centered cubic metals and alloys. Moreso, in the texture development not any single parameter can be held responsible, rather, the interdependency of each of the three parameters must be considered. In this frame-work polycrystalline grains can be classified into four types according to their stability and susceptibility during deformation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghamarian, I.; Samani, P.; Rohrer, G. S.

Grain boundary engineering and other fundamental materials science problems (e.g., phase transformations and physical properties) require an improvement in the understanding of the type and population of grain boundaries in a given system – yet, databases are limited in number and spare in detail, including for hcp crystals such as zirconium. One way to rapidly obtain databases to analyze is to use small-grained materials and high spatial resolution orientation microscopy techniques, such as ASTAR™/precession electron diffraction. To demonstrate this, a study of grain boundary character distributions was conducted for α-zirconium deposited at room temperature on fused silica substrates using physicalmore » vapor deposition. The orientation maps of the nanocrystalline thin films were acquired by the ASTARα/precession electron diffraction technique, a new transmission electron microscope based orientation microscopy method. The reconstructed grain boundaries were classified as pure tilt, pure twist, 180°-twist and 180°-tilt grain boundaries based on the distribution of grain boundary planes with respect to the angle/axis of misorientation associated with grain boundaries. The results of the current study were compared to the results of a similar study on α-titanium and the molecular dynamics results of grain boundary energy for α-titanium.« less

In situ grain fracture mechanics during uniaxial compaction of granular solids

NASA Astrophysics Data System (ADS)

Hurley, R. C.; Lind, J.; Pagan, D. C.; Akin, M. C.; Herbold, E. B.

2018-03-01

Grain fracture and crushing are known to influence the macroscopic mechanical behavior of granular materials and be influenced by factors such as grain composition, morphology, and microstructure. In this paper, we investigate grain fracture and crushing by combining synchrotron x-ray computed tomography and three-dimensional x-ray diffraction to study two granular samples undergoing uniaxial compaction. Our measurements provide details of grain kinematics, contacts, average intra-granular stresses, inter-particle forces, and intra-grain crystal and fracture plane orientations. Our analyses elucidate the complex nature of fracture and crushing, showing that: (1) the average stress states of grains prior to fracture vary widely in their relation to global and local trends; (2) fractured grains experience inter-particle forces and stored energies that are statistically higher than intact grains prior to fracture; (3) fracture plane orientations are primarily controlled by average intra-granular stress and contact fabric rather than the orientation of the crystal lattice; (4) the creation of new surfaces during fracture accounts for a very small portion of the energy dissipated during compaction; (5) mixing brittle and ductile grain materials alters the grain-scale fracture response. The results highlight an application of combined x-ray measurements for non-destructive in situ analysis of granular solids and provide details about grain fracture that have important implications for theory and modeling.

Recrystallization of polycrystalline silicon

NASA Technical Reports Server (NTRS)

Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

1981-01-01

Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, H.G., E-mail: helen.jones@npl.co.uk

A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beammore » exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.« less

Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon

NASA Astrophysics Data System (ADS)

Jain, T.; Lin, H. K.; Lan, C. W.

2018-03-01

The development of grain structures during directional solidification of multi-crystalline silicon (mc-Si) plays a crucial role in the materials quality for silicon solar cells. Three dimensional (3D) modelling of the grain boundary (GB) interaction and evolution based on phase fields by considering anisotropic GB energy and mobility for mc-Si is carried out for the first time to elucidate the process. The energy and mobility of GBs are allowed to depend on misorientation and the GB plane. To examine the correctness of our method, the known the coincident site lattice (CSL) combinations such as (∑ a + ∑ b → ∑ a × b) or (∑ a + ∑ b → ∑ a / b) are verified. We frther discuss how to use the GB normal to characterize a ∑ 3 twin GB into a tilt or a twist one, and show the interaction between tilt and twist ∑ 3 twin GBs. Two experimental scenarios are considered for comparison and the results are in good agreement with the experiments as well as the theoretical predictions.

Distribution of trace elements in a modified and grain refined aluminium-silicon hypoeutectic alloy.

PubMed

Faraji, M; Katgerman, L

2010-08-01

The influence of modifier and grain refiner on the nucleation process of a commercial hypoeutectic Al-Si foundry alloy (A356) was investigated using optical microscopy, scanning electron microscopy (SEM) and electron probe microanalysis technique (EPMA). Filtering was used to improve the casting quality; however, it compromised the modification of silicon. Effect of filtering on strontium loss was also studied using the afore-mentioned techniques. EPMA was used to trace the modifying and grain refining agents inside matrix and eutectic Si. This was to help understanding mechanisms of nucleation and modification in this alloy. Using EPMA, the negative interaction of Sr and Al3TiB was closely examined. In modified structure, it was found that the maximum point of Sr concentration was in line with peak of silicon; however, in case of just 0.1wt% added Ti, the peak of Ti concentration was not in line with aluminium, (but it was close to Si peak). Furthermore, EPMA results showed that using filter during casting process lowered the strontium content, although produced a cleaner melt. (c) 2010 Elsevier Ltd. All rights reserved.

Determination of the five parameter grain boundary character distribution of nanocrystalline alpha-zirconium thin films using transmission electron microscopy

DOE PAGES

Ghamarian, I.; Samani, P.; Rohrer, G. S.; ...

2017-03-24

Grain boundary engineering and other fundamental materials science problems (e.g., phase transformations and physical properties) require an improvement in the understanding of the type and population of grain boundaries in a given system – yet, databases are limited in number and spare in detail, including for hcp crystals such as zirconium. One way to rapidly obtain databases to analyze is to use small-grained materials and high spatial resolution orientation microscopy techniques, such as ASTAR™/precession electron diffraction. To demonstrate this, a study of grain boundary character distributions was conducted for α-zirconium deposited at room temperature on fused silica substrates using physicalmore » vapor deposition. The orientation maps of the nanocrystalline thin films were acquired by the ASTARα/precession electron diffraction technique, a new transmission electron microscope based orientation microscopy method. The reconstructed grain boundaries were classified as pure tilt, pure twist, 180°-twist and 180°-tilt grain boundaries based on the distribution of grain boundary planes with respect to the angle/axis of misorientation associated with grain boundaries. The results of the current study were compared to the results of a similar study on α-titanium and the molecular dynamics results of grain boundary energy for α-titanium.« less

TEM and SEM (EBIC) investigations of silicon bicrystals

NASA Technical Reports Server (NTRS)

Gleichmann, R.; Ast, D. G.

1983-01-01

The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.

Late formation of silicon carbide in type II supernovae

PubMed Central

Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua

2018-01-01

We have found that individual presolar silicon carbide (SiC) dust grains from supernovae show a positive correlation between 49Ti and 28Si excesses, which is attributed to the radioactive decay of the short-lived (t½ = 330 days) 49V to 49Ti in the inner highly 28Si-rich Si/S zone. The 49V-49Ti chronometer shows that these supernova SiC dust grains formed at least 2 years after their parent stars exploded. This result supports recent dust condensation calculations that predict a delayed formation of carbonaceous and SiC grains in supernovae. The astronomical observation of continuous buildup of dust in supernovae over several years can, therefore, be interpreted as a growing addition of C-rich dust to the dust reservoir in supernovae. PMID:29376119

Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng

2009-03-01

The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.

Detail Extraction from Electron Backscatter Diffraction Patterns

NASA Astrophysics Data System (ADS)

Basinger, Jay

Cross-correlation based analysis of electron backscatter diffraction (EBSD) patterns and the use of simulated reference patterns has opened up entirely new avenues of insight into local lattice properties within EBSD scans. The benefits of accessing new levels of orientation resolution and multiple types of previously inaccessible data measures are accompanied with new challenges in characterizing microscope geometry and other error previously ignored in EBSD systems. The foremost of these challenges, when using simulated patterns in high resolution EBSD (HR-EBSD), is the determination of pattern center (the location on the sample from which the EBSD pattern originated) with sufficient accuracy to avoid the introduction of phantom lattice rotations and elastic strain into these highly sensitive measures. This dissertation demonstrates how to greatly improve pattern center determination. It also presents a method for the extraction of grain boundary plane information from single two-dimensional surface scans. These are accomplished through the use of previously un-accessed detail within EBSD images, coupled with physical models of the backscattering phenomena. A software algorithm is detailed and applied for the determination of pattern center with an accuracy of ˜0.03% of the phosphor screen width, or ˜10μm. This resolution makes it possible to apply a simulated pattern method (developed at BYU) in HR-EBSD, with several important benefits over the original HR-EBSD approach developed by Angus Wilkinson. Experimental work is done on epitaxially-grown silicon and germanium in order to gauge the precision of HR-EBSD with simulated reference patterns using the new pattern center calibration approach. It is found that strain resolution with a calibrated pattern center and simulated reference patterns can be as low as 7x10-4. Finally, Monte Carlo-based models of the electron interaction volume are used in conjunction with pattern-mixing-strength curves of line scans crossing grain boundaries in order to recover 3D grain boundary plane information. Validation of the approach is done using 3D serial scan data and coherent twin boundaries in tantalum and copper. The proposed method for recovery of grain boundary plane orientation exhibits an average error of 3 degrees.

BHQ revisited (1) - Looking at grain size

NASA Astrophysics Data System (ADS)

Heilbronner, Renée; Kilian, Rüdiger; Tullis, Jan

2016-04-01

Black Hills Quartzite (BHQ) has been used extensively in experimental rock deformation for numerous studies. Coaxial and general shear experiments have been carried out, for example, to define the dislocation creep regimes of quartz (Hirth & Tullis, 1992), to determine the effect of annealing (Heilbronner & Tullis, 2002) or to study the development of texture and microstructure with strain (Heilbronner & Tullis, 2006). BHQ was also used to determine the widely used quartz piezometer by Stipp & Tullis (2003). Among the microstructure analyses that were performed in those original papers, grain size was usually determined using CIP misorientation images. However, the CIP method (= computer-integrated polarization microscopy, details in Heilbronner and Barrett, 2014) is only capable of detecting the c-axis orientation of optically uniaxial materials and hence is only capable of detecting grain boundaries between grains that differ in c-axis orientation. One of the puzzling results we found (Heilbronner & Tullis, 2006) was that the recrystallized grain size seemed to depend on the crystallographic preferred orientation of the domain. In other words the grain size did not only depend on the flow stress but also on the orientation of the c-axis w/r to the shear direction. At the time, no EBSD analysis (electron back scatter diffraction) was carried out and hence the full crystallographic orientation was not known. In principle it is therefore possible that we missed some grain boundaries (between grains with parallel c-axes) and miscalculated our grain sizes. In the context of recent shear experiments on quartz gouge at the brittle-viscous transition (see Richter et al., this conference), where EBSD is used to measure the recrystallized grain size, we wanted to re-measure the CIP grain sizes of our 2006 samples (deformed in regime 1, 2 and 3 of dislocation) in exactly the same way. In two companion posters we use EBSD orientation imaging to repeat, refine and expand the microstructure and texture analysis of Heilbronner & Tullis (2006). Here, in poster (1), we focus on the recrystallized grain size with the aim of (a) comparing CIP- and EBSD derived grain size measurements, (b) of comparing the recrystallized grain size of coaxially deformed and sheared BHQ and (c) in order to confirm that the quartz piezometer indeed depends on texture, and (d) to test if it also depends on the type of deformation (irrotational versus rotational deformation). References cited: Heilbronner, R., and S.D. Barrett (2014) Image Analysis in Earth Sciences, Springer. Heilbronner, R., and J. Tullis (2002), The effect of static annealing on micro- structure and crystallographic preferred orientations of quartzites experimentally deformed in axial compression and shear, Geol. Soc. Spec. Publ., 200, 191 - 218. Heilbronner, R., and J. Tullis (2006), Evolution of c axis pole figures and grain size during dynamic recrystallization: Results from experimentally sheared quartzite. JGR, 111, B10202, doi:10.1029/2005JB004194, 2006 Hirth, G., and J. Tullis (1992), Dislocation creep regimes in quartz aggregates, JSG, 14, 145-159. Stipp, M., and J. Tullis (2003), The recrystallized grain size piezometer for quartz, Geophys. Res. Lett., 30(21), 2088, doi:10.1029/2003GL018444.

Rough SERS substrate based on gold coated porous silicon layer prepared on the silicon backside surface

NASA Astrophysics Data System (ADS)

Dridi, H.; Haji, L.; Moadhen, A.

2017-04-01

We report in this paper a novel method to elaborate rough Surface Enhanced Raman Scattering (SERS) substrate. A single layer of porous silicon was formed on the silicon backside surface. Morphological characteristics of the porous silicon layer before and after gold deposition were influenced by the rough character (gold size). The reflectance measurements showed a dependence of the gold nano-grains size on the surface nature, through the Localized Surface Plasmon (LSP) band properties. SERS signal of Rhodamine 6G used as a model analyte, adsorbed on the rough porous silicon layer revealed a marked enhancement of its vibrational modes intensities.

Structure of deformed silicon and implications for low cost solar cells

NASA Technical Reports Server (NTRS)

Mardesich, N.; Leipold, M. H.; Turner, G. B.; Digges, T. G., Jr.

1978-01-01

The microstructure and minority carrier lifetime of silicon were investigated in uniaxially compressed silicon samples. The objective of the investigation was to determine if it is feasible to produce silicon solar cells from sheet formed by high temperature rolling. The initial structure of the silicon samples ranged from single crystal to fine-grained polycrystals. The samples had been deformed at strain rates of 0.1 to 8.5/sec and temperatures of 1270-1380 C with subsequent annealing at 1270-1380 C. The results suggest that high temperature rolling of silicon to produce sheet for cells of high efficiency is not practical.

Quantitative Analysis of Defects in Silicon. [to predict energy conversion efficiency of silicon samples for solar cells

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Qidwai, H. A.; Bruce, T.

1979-01-01

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.

1996-01-01

Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

Experimental investigation into the coupling effects of magnetic field, temperature and pressure on electrical resistivity of non-oriented silicon steel sheet

NASA Astrophysics Data System (ADS)

Xiao, Lijun; Yu, Guodong; Zou, Jibin; Xu, Yongxiang

2018-05-01

In order to analyze the performance of magnetic device which operate at high temperature and high pressure, such as submersible motor, oil well transformer, the electrical resistivity of non-oriented silicon steel sheets is necessary for precise analysis. But the reports of the examination of the measuring method suitable for high temperature up to 180 °C and high pressure up to 140 MPa are few. In this paper, a measurement system based on four-probe method and Archimedes spiral shape measurement specimens is proposed. The measurement system is suitable for measuring the electrical resistivity of unconventional specimens under high temperature and high pressure and can simultaneously consider the influence of the magnetic field on the electrical resistivity. It can be seen that the electrical resistivity of the non-oriented silicon steel sheets will fluctuate instantaneously when the magnetic field perpendicular to the conductive path of the specimens is loaded or removed. The amplitude and direction of the fluctuation are not constant. Without considering the effects of fluctuations, the electrical resistivity of the non-oriented silicon steel sheets is the same when the magnetic field is loaded or removed. And the influence of temperature on the electrical resistivity of the non-oriented silicon steel sheet is still the greatest even though the temperature and the pressure are coupled together. The measurement results also show that the electrical resistivity varies linearly with temperature, so the temperature coefficient of resistivity is given in the paper.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Leung, D. C.; Iles, P. A.

1983-01-01

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

Shock fabrics in fine-grained micrometeorites

NASA Astrophysics Data System (ADS)

Suttle, M. D.; Genge, M. J.; Russell, S. S.

2017-10-01

The orientations of dehydration cracks and fracture networks in fine-grained, unmelted micrometeorites were analyzed using rose diagrams and entropy calculations. As cracks exploit pre-existing anisotropies, analysis of their orientation provides a mechanism with which to study the subtle petrofabrics preserved within fine-grained and amorphous materials. Both uniaxial and biaxial fabrics are discovered, often with a relatively wide spread in orientations (40°-60°). Brittle deformation cataclasis and rotated olivine grains are reported from a single micrometeorite. This paper provides the first evidence for impact-induced shock deformation in fine-grained micrometeorites. The presence of pervasive, low-grade shock features in CM chondrites and CM-like dust, anomalously low-density measurements for C-type asteroids, and impact experiments which suggest CM chondrites are highly prone to disruption all imply that CM parent bodies are unlikely to have remained intact and instead exist as a collection of loosely aggregated rubble-pile asteroids, composed of primitive shocked clasts.

Effect of specimen size and grain orientation on the mechanical and physical properties of NBG-18 nuclear graphite

DOE PAGES

Vasudevamurthy, G.; Byun, T. S.; Pappano, Pete; ...

2015-03-13

Here we present a comparison of the measured baseline mechanical and physical properties of with grain (WG) and against grain (AG) non-ASTM size NBG-18 graphite. The objectives of the experiments were twofold: (1) assess the variation in properties with grain orientation; (2) establish a correlation between specimen tensile strength and size. The tensile strength of the smallest sized (4 mm diameter) specimens were about 5% higher than the standard specimens (12 mm diameter) but still within one standard deviation of the ASTM specimen size indicating no significant dependence of strength on specimen size. The thermal expansion coefficient and elastic constantsmore » did not show significant dependence on specimen size. Lastly, experimental data indicated that the variation of thermal expansion coefficient and elastic constants were still within 5% between the different grain orientations, confirming the isotropic nature of NBG-18 graphite in physical properties.« less

Presolar stardust in meteorites: recent advances and scientific frontiers

NASA Astrophysics Data System (ADS)

Nittler, Larry R.

2003-04-01

Grains of stardust that formed in stellar outflows prior to the formation of the solar system survive intact as trace constituents of primitive meteorites. The presolar origin of the grains is indicated by enormous isotopic ratio variations compared to solar system materials. Identified presolar phases include diamond, silicon carbide, graphite, silicon nitride, corundum, spinel, hibonite, titanium oxide, and, most recently, silicates. Sub-grains of refractory carbides (e.g. TiC), and Fe-Ni metal have also been observed within individual presolar graphite grains. Isotopic compositions indicate that the grains formed in red giants, asymptotic giant branch (AGB) stars, supernovae and novae; thus they provide unique insights into the evolution of and nucleosynthesis within these environments. Some of the isotopic variations also reflect the chemical evolution of the galaxy and can be used to constrain corresponding models. Presolar grain microstructures provide information about physical and chemical conditions of dust formation in stellar environments; recent studies have focused on graphite grains from supernovae as well as SiC and corundum from AGB stars. The survival of presolar grains in different classes of meteorites has important implications for early solar system evolution. Recent analytical developments, including resonance ionization mass spectrometry, high spatial resolution secondary ion mass spectrometry and site-selective ion milling, should help solve many outstanding problems but are likely to also introduce new surprises.

Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

NASA Astrophysics Data System (ADS)

Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

2015-08-01

Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

Bed structure and bedload transport: Sediment grain reorientation in response to high and low flows in an experimental flume

NASA Astrophysics Data System (ADS)

Gurer, M.; Sullivan, S.; Masteller, C.

2016-12-01

Bedload is a regime of sediment transport that occurs when particles roll, hop, or bounce downstream. This mode of transport represents an important portion of the sediment load in a gravel river. Despite numerous studies focused on bedload transport, it still remains difficult to predict accurately due to the complex arrangement of riverbed particles. The formation of gravel clusters, stones being imbricated, or streamlined, and other interlocked arrangements, as well as grains armoring the bed, all tend to stabilize gravel channels and decrease bed mobility. Typically, the development of bed structure usually occurs as sediment moves downstream. However, it is unclear that gravel bed structure can be developed during weaker flows that do not generate significant sediment transport. We examine how individual sediment grains reorient themselves during low flow conditions, in the absence of sediment transport, and during high flow conditions, as bedload transport occurs. We then perform flume experiments where we expose a gravel bed to varying durations of low flow and raise the water level, simulating a flood and transporting sediment. We also compare the long-axis orientations of grains before and after each low flow period and transport. We find that sediment grains reorient themselves differently during low and high flows. During low flow, grains appear to reorient themselves with the long-axes towards cross-stream direction, or perpendicular to the flow, with longer duration flows resulting in more pronounced cross-stream orientation. During high flow, grains orient themselves with their long-axes facing downstream or parallel to the flow, similar to imbricated grains observed in the sedimentary record. Further, when transport occurs, we find that median grain orientation is strongly correlated with bedload transport rates (R^2 = 0.98). We also observe that median grain orientations more perpendicular to downstream flow result in reduced transport rates. This new result suggests that the low flow reorientation of grains perpendicular to downstream flow drives observed differences in bedload transport during high flows. We conclude that low flow periods are important for the creation of bed structure and the stabilization of gravel river channels.

Pulsed-Laser-Induced Melting and Solidification of Thin Metallic Films

NASA Astrophysics Data System (ADS)

Choi, Min Hwan

This thesis focused on investigating excimer-laser induced melting and solidification of thin metallic films on SiO2. Two distinct topics were pursued: (1) microstructural manipulation and optimization of Cu films via SLS of as-deposited Cu films on SiO2, and (2) investigation of oriented heterogeneous nucleation via complete melting and subsequent nucleation-initated solidification of Ni films on SiO2. Close examination of laterally grown grains, which quickly develop rolling direction crystallographic orientation texture due to occlusion of differently oriented grains, reveal, furthermore, that low-angle grain boundaries as well as twins can be generated during the growth. These intra-grain defects are found to appear in a systematic manner (as they are located at specific regions and observed under specific incident energy densities). Significantly longer lateral growth distances observed in Cu films (compared to that of Si films) was attributed to the fact that substantially higher growth rates are expected with simple metallic films at a given interfacial undercooling. The implementation of SLS using Cu films was accomplished quite effectively, as can be expected from the above lateral-growth-related results involving single-shot expeirments. We were able to achieve a variety of large-grained, grain-boundary location and grain-orientation controlled Cu films via various SLS techniques. When performed optimally in accordance with the findings made in chapter 2, the resulting microstructure exhibits large grains, which are primarily devoid of intra-grain defects. For example, 2-shot SLS processed Cu films led to strong rolling direction orientation, while avoiding the formation of low-angle grain boundaries and twin-boundaries. The highlight of SLS on Cu films correspond to a version of SLS (referred to as "2-Shot plus 2-Shot" SLS) in which the second 2-shot SLS is performed in the direction perpendicular to the first one. Through this approach, we were able to achieve grain-boundary-location controlled microstructure with a strong orientation texture in all three dimensions (forming, effectively, an ultra-large quasi-single crystal material). Nucleation of solids in laser-quenched Ni films was investigated using EBSD analysis. The surface orientation analysis of nucleated grains obtained within the complete melting regime reveal a clear sign of texture. From these and additional findings from previous work involving Al films, we were able to conclude that systematic heterogeneous nucleation has taken place, and, furthermore, that oriented nucleation of the solids must have taken place. Although always suspected to be the case, it is typically extremely challenging to prove with certainty, in conventional nucleation experiments, that the mechanism of nucleation corresponds to that of a heterogeneous one. Furthermore, although it has been suspected theoretically for over 50 years, experimental results that clearly show that oriented nucleation actually transpires have not been obtained until our work involving Al films; the present findings involving Ni films further strengthen this conclusion as the Ni system removes some of the experimental uncertainties that are associated with Al films, and, furthermore, suggests that the process of oriented nucleation is a general and rather pervasive phenomenon. Additionally, it was observed that the selected orientation changed as a function of incident energy density; in the low energy density regime (above the completed melting threshold) {110}-surface texture was observed, while {111}-surface texture became more dominent at higher densities. Motivated by our experimental work involving Al and Ni that clearly indicates that oriented heterogeneous nucleation is a major path through which heterogeneous nucleation of solids occurs, we have also carried out a 2-dimensional Winterbottom-type thermodynamic analysis that can be used to obtain a better understanding of the phenomenon. In contrast to the previous work on the subject, we consider in our modelling the anisotropic nature of both the solid-liquid and solid-substrate interfacial energy; we advocate that this is the only physically consistent combination. The results show that oriented nucleation can be systematically accounted for as stemming from the expected anisotropic nature of the involved interfacial energies. Furthermore, the analysis also suggests possible reasons for observing a transition in surface texture from one orientation to another. (Abstract shortened by UMI.).

On the role of grain boundary character distribution in grain growth of Al-Mg alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumoto, K.; Shibayanagi, T.; Umakoshi, Y.

1997-02-01

Grain growth behavior of recrystallized Al-Mg alloys containing 0.3 and 2.7 mass% Mg was investigated, focusing on the interconnection between development of the texture and grain boundary character distribution. An Al-0.3 mass% Mg alloy showed two stages in the change of microstructure during grain growth: the frequency of cube oriented grains and the {Sigma}1 boundary significantly increased at an early stage and then decreased. In the second stage a small amount of isolated large grains with the non-cube component grew and consumed the surrounding cube grains. In contrast, the frequency of cube oriented grains and the grain boundary character distributionmore » showed no significant change during grain growth of Al-2.7 mass% Mg. Small clusters composed of several cube grains containing {Sigma}1 boundaries were formed and their spatial distribution played an important role in the change of microstructure during grain growth. The effect of the spatial distribution on the grain growth behavior was discussed considering the energy balance at triple junctions of grain boundaries.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghamarian, Iman, E-mail: imanghamarian@yahoo.com; Department of Materials Science and Engineering, University of North Texas, Denton, TX 76203; Samimi, Peyman

The presence and interaction of nanotwins, geometrically necessary dislocations, and grain boundaries play a key role in the mechanical properties of nanostructured crystalline materials. Therefore, it is vital to determine the orientation, width and distance of nanotwins, the angle and axis of grain boundary misorientations as well as the type and the distributions of dislocations in an automatic and statistically meaningful fashion in a relatively large area. In this paper, such details are provided using a transmission electron microscope-based orientation microscopy technique called ASTAR™/precession electron diffraction. The remarkable spatial resolution of this technique (~ 2 nm) enables highly detailed characterizationmore » of nanotwins, grain boundaries and the configuration of dislocations. This orientation microscopy technique provides the raw data required for the determination of these parameters. The procedures to post-process the ASTAR™/PED datasets in order to obtain the important (and currently largely hidden) details of nanotwins as well as quantifications of dislocation density distributions are described in this study. - Highlights: • EBSD cannot characterize defects such as dislocations, grain boundaries and nanotwins in severely deformed metals. • TEM based orientation microscopy technique called ASTAR™/PED was used to resolve the problem. • Locations and orientations of nanotwins, dislocation density distribution and grain boundary characters can be resolved. • This work provides the bases for further studies on the interactions between dislocations, grain boundaries and nanotwins. • The computation part is explained sufficiently which helps the readers to post process their own data.« less

Fabrication of Ti substrate grain dependent C/TiO2 composites through carbothermal treatment of anodic TiO2.

PubMed

Rüdiger, Celine; Favaro, Marco; Valero-Vidal, Carlos; Calvillo, Laura; Bozzolo, Nathalie; Jacomet, Suzanne; Hejny, Clivia; Gregoratti, Luca; Amati, Matteo; Agnoli, Stefano; Granozzi, Gaetano; Kunze-Liebhäuser, Julia

2016-04-07

Composite materials of titania and graphitic carbon, and their optimized synthesis are highly interesting for application in sustainable energy conversion and storage. We report on planar C/TiO2 composite films that are prepared on a polycrystalline titanium substrate by carbothermal treatment of compact anodic TiO2 with acetylene. This thin film material allows for the study of functional properties of C/TiO2 as a function of chemical composition and structure. The chemical and structural properties of the composite on top of individual Ti substrate grains are examined by scanning photoelectron microscopy and micro-Raman spectroscopy. Through comparison of these data with electron backscatter diffraction, it is found that the amount of generated carbon and the grade of anodic film crystallinity correlate with the crystallographic orientation of the Ti substrate grains. On top of Ti grains with ∼(0001) orientations the anodic TiO2 exhibits the highest grade of crystallinity, and the composite contains the highest fraction of graphitic carbon compared to Ti grains with other orientations. This indirect effect of the Ti substrate grain orientation yields new insights into the activity of TiO2 towards the decomposition of carbon precursors.

Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

1996-01-01

Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

Grain orientation effects on dynamic strength of FCC multicrystals at low shock pressures: a hydrodynamic instability study

DOE PAGES

Peralta, P.; Loomis, E.; Chen, Y.; ...

2015-04-09

Variability in local dynamic plasticity due to material anisotropy in polycrystalline metals is likely to be important on damage nucleation and growth at low pressures. Hydrodynamic instabilities could be used to study these plasticity effects by correlating measured changes in perturbation amplitudes at free surfaces to local plastic behaviour and grain orientation, but amplitude changes are typically too small to be measured reliably at low pressures using conventional diagnostics. Correlations between strength at low shock pressures and grain orientation were studied in copper (grain size ≈ 800 μm) using the Richtmyer–Meshkov instability with a square-wave surface perturbation (wavelength = 150 μm, amplitude = 5 μm), shocked at 2.7 GPa using symmetric plate impacts. A Plexiglas window was pressed against the peaks of the perturbation, keeping valleys as free surfaces. This produced perturbation amplitude changes much larger than those predicted without the window. Amplitude reductions from 64 to 88% were measured in recovered samples and grains oriented close tomore » $$\\langle$$0 0 1$$\\rangle$$ parallel to the shock had the largest final amplitude, whereas grains with shocks directions close to $$\\langle$$1 0 1$$\\rangle$$ had the lowest. Finite element simulations were performed with elastic-perfectly plastic models to estimate yield strengths leading lead to those final amplitudes. Anisotropic elasticity and these yield strengths were used to calculate the resolved shear stresses at yielding for the two orientations. In conclusion, results are compared with reports on orientation dependence of dynamic yielding in Cu single crystals and the higher values obtained suggest that strength estimations via hydrodynamic instabilities are sensitive to strain hardening and strain rate effects.« less

Investigation of aluminosilicate as a solid oxide fuel cell refractory

NASA Astrophysics Data System (ADS)

Gentile, Paul S.; Sofie, Stephen W.

2011-05-01

Aluminosilicate represents a potential low cost alternative to alumina for solid oxide fuel cell (SOFC) refractory applications. The objectives of this investigation are to study: (1) changes of aluminosilicate chemistry and morphology under SOFC conditions, (2) deposition of aluminosilicate vapors on yttria stabilized zirconia (YSZ) and nickel, and (3) effects of aluminosilicate vapors on SOFC electrochemical performance. Thermal treatment of aluminosilicate under high temperature SOFC conditions is shown to result in increased mullite concentrations at the surface due to diffusion of silicon from the bulk. Water vapor accelerates the rate of surface diffusion resulting in a more uniform distribution of silicon. The high temperature condensation of volatile gases released from aluminosilicate preferentially deposit on YSZ rather than nickel. Silicon vapor deposited on YSZ consists primarily of aluminum rich clusters enclosed in an amorphous siliceous layer. Increased concentrations of silicon are observed in enlarged grain boundaries indicating separation of YSZ grains by insulating glassy phase. The presence of aluminosilicate powder in the hot zone of a fuel line supplying humidified hydrogen to an SOFC anode impeded peak performance and accelerated degradation. Energy dispersive X-ray spectroscopy detected concentrations of silicon at the interface between the electrolyte and anode interlayer above impurity levels.

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1977-01-01

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Dickerson, Robert M.

1995-01-01

Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

Highly oriented diamond films on Si: growth, characterization, and devices

NASA Astrophysics Data System (ADS)

Stoner, Brian R.; Malta, D. M.; Tessmer, A. J.; Holmes, J.; Dreifus, David L.; Glass, R. C.; Sowers, A.; Nemanich, Robert J.

1994-04-01

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

The eight micron band of silicon monoxide in the expanding cloud around VY Canis Majoris

NASA Technical Reports Server (NTRS)

Geballe, T. R.; Lacy, J. H.; Beck, S. C.

1978-01-01

Observations of vibration-rotation transitions of silicon monoxide in VY CMa show that the lines originate in accelerating, expanding, and cool (600 K) layers of a circumstellar cloud at a distance of roughly 0.15 minutes from the central star. The central stellar velocity, as estimated from observed SiO P Cygni line profiles, is somewhat redshifted from the midpoint of the maser emission features. Most of the silicon is probably in the form of dust grains. The isotopic ratios of silicon are nearly terrestrial.

The 8 micron band of silicon monoxide in the expanding cloud around VY Canis Majoris

NASA Technical Reports Server (NTRS)

Geballe, T. R.; Lacy, J. H.; Beck, S. C.

1979-01-01

Observations of vibration-rotation transitions of silicon monoxide in VY CMa show that the lines originate in accelerating, expanding, and cool (about 600 K) layers of a circumstellar cloud at a distance of approximately 0.15 arcsec from the central star. The central stellar velocity, as estimated from observed SiO P Cygni line profiles, is somewhat redshifted from the midpoint of the maser emission features. Most of the silicon is probably in the form of dust grains. The isotopic ratios of silicon are nearly terrestrial.

Crystallization of the glassy grain boundary phase in silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Drummond, Charles H., III

1991-01-01

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

The effect of SiO2, Pt, and Pt /Au templates on the microstructure and permittivity of BaxSr1-xTiO3 films

NASA Astrophysics Data System (ADS)

Rundqvist, Pär; Liljenfors, Tomas; Vorobiev, Andrei; Olsson, Eva; Gevorgian, Spartak

2006-12-01

Ba0.25Sr0.75TiO3 (BSTO) and SrTiO3 (STO) ferroelectric thin films were grown on templates of SiO2/Si, Pt /TiO2/SiO2/Si, and Pt /Au/Pt/TiO2/SiO2/Si using pulsed laser deposition. The microstructure and surface morphology of the multilayer stacks were studied using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The microstructural analysis shows that the ferroelectric films are polycrystalline textured with a columnar structure where the grain size is 50-100nm. The BSTO films deposited at 800°C on an amorphous SiO2/Si template reveal a textured structure with a dominant (110) orientation, which is explained by a dominant growth of BSTO (110) grains due to the lower surface energy of the (110) phase. The STO and BSTO films deposited at 650°C on the Pt /TiO2/SiO2/Si and Pt /Au/Pt/TiO2/SiO2/Si templates, respectively, reveal a structure with a dominant (111) orientation, which is explained by the dominant growth of BSTO (STO) (111) grains imposed by the underlying Pt (111) texture. In all cases the ferroelectric films are subject to compressive in-plane strain which is different for different grain orientations. Strain modified permittivities of ferroelectric films grown on different templates are calculated from first principles for different orientations and compared with measured results. The correlations between grain orientations, grain sizes, grain boundaries, strain, and dielectric permittivity of ferroelectric films on different templates are discussed.

The effect of grain orientation on nanoindentation behavior of model austenitic alloy Fe-20Cr-25Ni

DOE PAGES

Chen, Tianyi; Tan, Lizhen; Lu, Zizhe; ...

2017-07-26

Instrumented nanoindentation was used in this paper to investigate the hardness, elastic modulus, and creep behavior of an austenitic Fe-20Cr-25Ni model alloy at room temperature, with the indented grain orientation being the variant. The samples indented close to the {111} surfaces exhibited the highest hardness and modulus. However, nanoindentation creep tests showed the greatest tendency for creep in the {111} indented samples, compared with the samples indented close to the {001} and {101} surfaces. Scanning electron microscopy and cross-sectional transmission electron microscopy revealed slip bands and dislocations in all samples. The slip band patterns on the indented surfaces were influencedmore » by the grain orientations. Deformation twinning was observed only under the {001} indented surfaces. Finally, microstructural analysis and molecular dynamics modeling correlated the anisotropic nanoindentation-creep behavior with the different dislocation substructures formed during indentation, which resulted from the dislocation reactions of certain active slip systems that are determined by the indented grain orientations.« less

Two-dimensional mapping of triaxial strain fields in a multiferroic BiFeO3 thin film using scanning x-ray microdiffraction

NASA Astrophysics Data System (ADS)

Bark, Chung W.; Cho, Kyung C.; Koo, Yang M.; Tamura, Nobumichi; Ryu, Sangwoo; Jang, Hyun M.

2007-03-01

The dramatically enhanced polarizations and saturation magnetizations observed in the epitaxially constrained BiFeO3 (BFO) thin films with their pronounced grain-orientation dependence have attracted much attention and are attributed largely to the constrained in-plane strain. Thus, it is highly desirable to directly obtain information on the two-dimensional (2D) distribution of the in-plane strain and its correlation with the grain orientation of each corresponding microregion. Here the authors report a 2D quantitative mapping of the grain orientation and the local triaxial strain field in a 250nm thick multiferroic BFO film using a synchrotron x-ray microdiffraction technique. This direct scanning measurement demonstrates that the deviatoric component of the in-plane strain tensor is between 5×10-3 and 6×10-3 and that the local triaxial strain is fairly well correlated with the grain orientation in that particular region.

Effect of surface crystallographic orientation on the oxidation behavior of Ni-based alloy

NASA Astrophysics Data System (ADS)

Wang, Xu; Szpunar, J. A.; Zhang, Lina

2015-02-01

Dependence of initial oxidation behavior on crystalline orientation of Haynes 230 at 900 °C was investigated by a novel method. Analysis of oxidation rate reveals that the oxide thicknesses are different for grains having different orientations. Orientation mapping was performed on oxidized specimen and grains having near {1 1 1} were easily indexed by electron backscattered diffraction. We determined that planes with deviation angle lower than 20° were all well indexed after oxidation. Results demonstrate that substrate orientation plays an important role on oxidation rate during the initial stage.

[Effects of Rice Cultivar and Typical Soil Improvement Measures on the Uptake of Cd in Rice Grains].

PubMed

Wang, Mei-e; Peng, Chi; Chen, Wei-ping

2015-11-01

Cadmium pollution of rice is a big problem in agricultural food safety. The accident "Cd rice" occurred last year in Youxian County, Hunan Province caused serious social panic. In this study, trials on "Cd rice" controlling techniques specific to the Cd pollution in paddy soil in Youxian were investigated. It was suggested that the average Cd contents in rice grains of the rice variety "Zhu Liang You 06" in Datongqiao and Wangling were 0.167 and 0.127 mg x kg(-1), respectively, which were only equal to 20% of the contents of other varieties. The trials for stabilizing agents revealed that treatments of lime and mineral fertilizer decreased Cd contents in rice grains to 20-30% of the control. Plastic film-mulched treatment decreased the rice grain Cd to 50%. And combined treatment of plastic film-mulched and biochar and silicon foliar-fertilizer decreased 80% of rice Cd content. Single treatments of silicon foliar-fertilizer and combined treatment of silicon foliar-fertilizer and topdressing fertilizer decreased more than 90% of Cd content. Results of BCR revealed that the percentage of cationic exchangeable and/or carbonate associated Cd fraction was more than 55% for most of the soil samples. Lime treatment significantly decreased the percentage of cationic exchangeable and/or carbonate and oxides of Fe and Mn associated Cd and increased the crystalline structure of clay minerals associated Cd. The change rate reached about 20%. Our results suggested concentration of soil Cd and pH were the two significant factors impacting the uptake of Cd by rice grains.

Backscattered Diffraction | Materials Science | NREL

Science.gov Websites

crystalline orientation (left) and grain distribution (right). EBSD images showing properties of crystalline investigate misorientation between grain boundaries, texture, grain distribution, deformation, strain, and

A laboratory based system for laue micro x-ray diffraction.

PubMed

Lynch, P A; Stevenson, A W; Liang, D; Parry, D; Wilkins, S; Tamura, N

2007-02-01

A laboratory diffraction system capable of illuminating individual grains in a polycrystalline matrix is described. Using a microfocus x-ray source equipped with a tungsten anode and prefigured monocapillary optic, a micro-x-ray diffraction system with a 10 microm beam was developed. The beam profile generated by the ellipsoidal capillary was determined using the "knife edge" approach. Measurement of the capillary performance, indicated a beam divergence of 14 mrad and a useable energy bandpass from 5.5 to 19 keV. Utilizing the polychromatic nature of the incident x-ray beam and application of the Laue indexing software package X-Ray Micro-Diffraction Analysis Software, the orientation and deviatoric strain of single grains in a polycrystalline material can be studied. To highlight the system potential the grain orientation and strain distribution of individual grains in a polycrystalline magnesium alloy (Mg 0.2 wt % Nd) was mapped before and after tensile loading. A basal (0002) orientation was identified in the as-rolled annealed alloy; after tensile loading some grains were observed to undergo an orientation change of 30 degrees with respect to (0002). The applied uniaxial load was measured as an increase in the deviatoric tensile strain parallel to the load axis.

Effect of Strain Restored Energy on Abnormal Grain Growth in Mg Alloy Simulated by Phase Field Methods

NASA Astrophysics Data System (ADS)

Wu, Yan; Huang, Yuan-yuan

2018-03-01

Abnormal grain growth of single phase AZ31 Mg alloy in the spatio-temporal process has been simulated by phase field models, and the influencing factors of abnormal grain growth are studied in order to find the ways to control secondary recrystallization in the microstructure. The study aims to find out the mechanisms for abnormal grain growth in real alloys. It is shown from the simulated results that the abnormal grain growth can be controlled by the strain restored energy. Secondary recrystallization after an annealing treatment can be induced if there are grains of a certain orientation in the microstructure with local high restored energy. However, if the value of the local restored energy at a certain grain orientation is not greater than 1.1E 0, there may be no abnormal grain growth in the microstructure.

ORIGIN OF QUARTZ IN COAL.

USGS Publications Warehouse

Ruppert, Leslie F.; Cecil, C. Blaine; Stanton, Ronald W.

1984-01-01

Both a scanning electron microscope and an electron microprobe (EMP) were used in this study to analyze the cathodoluminescence properties of quartz grains in samples of the Upper Freeport coal bed because quartz grains in coal are small (silt sized) and below the resolution capabilities of a standard luminoscope. Quartz grains were identified by the detection of silicon alone with energy dispersive X-ray units attached to both the SEM and the EMP.

Epitaxial Growth of YBa2Cu3O7 Films onto LaAlO3 (100) by Using Oxalates

NASA Astrophysics Data System (ADS)

Dominguez, A. Bustamante; Felix, L. León; Garcia, J.; Santibañez, J. Flores; Valladares, L. De Los Santos; Gonzalez, J. C.; Anaya, A. Osorio; Pillaca, M.

Due to the current necessity to obtain epitaxial superconductor films at low cost, we report the growth of YBa2Cu3O7 (Y123) films by chemical deposition. The procedure involved simple steps such as precipitation of stoichiometric amounts of yttrium, barium and copper acetates in oxalic acid (H2C2O4). The precursor solution was dripped onto LaAlO3 (100) substrates with the help of a Fisher pipette. The films were annealed in oxygen atmosphere during 12 h at three different temperatures: 820 °C, 840 °C and 860 °C. After 820 °C and 860 °C annealing, X-ray diffraction (XRD) analysis revealed high intensity of the (00l) reflections denoting that most of the Y123 grains were c-axis oriented. In addition, we also observed a-axis oriented grains ((h00) reflexion), minor randomly oriented grains and other phases (such as Y2BaCuO5 and CuO). In contrast, the sample treated at 840 °C, we noticed c - and a-axis oriented grains, very small amounts of randomly oriented grains without formation of other phases. From the magnetization versus temperature measurements, the critical temperatures were estimated at 70K and 90K for the samples annealed at 820 °C and 860 °C respectively.

Impact of laser anneal on NiPt silicide texture and chemical composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less

Impact of laser anneal on NiPt silicide texture and chemical composition

NASA Astrophysics Data System (ADS)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

2017-06-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

Thermoelectric properties of highly doped n-type polysilicon inverse opals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, J; Sinha, S

Nanostructured single-crystal silicon exhibits a remarkable increase in the figure of merit for thermoelectric energy conversion. Here we theoretically investigate a similar enhancement for polycrystalline silicon inverse opals. An inverse opal provides nanoscale grains and a thin-film like geometry to scatter phonons preferentially over electrons. Using solutions to the Boltzmann transport equation for electrons and phonons, we show that the figure of merit at 300 K is fifteen times that of bulk single-crystal silicon. Our models predict that grain boundaries are more effective than surfaces in enhancing the figure of merit. We provide insight into this effect and show thatmore » preserving a grain size smaller than the shell thickness of the inverse opal increases the figure of merit by as much as 50% when the ratio between the two features is a third. At 600 K, the figure of merit is as high as 0.6 for a shell thickness of 10 nm. This work advances the fundamental understanding of charge and heat transport in nanostructured inverse opals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758382]« less

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radnóczi, G. Z.; Battistig, G.; Pécz, B., E-mail: pecz.bela@ttk.mta.hu

2015-02-17

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a secondmore » region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.« less

Photo-thermal processing of semiconductor fibers and thin films

NASA Astrophysics Data System (ADS)

Gupta, Nishant

Furnace processing and rapid thermal processing (RTP) have been an integral part of several processing steps in semiconductor manufacturing. The performance of RTP techniques can be improved many times by exploiting quantum photo-effects of UV and vacuum ultraviolet (VUV) photons in thermal processing and this technique is known as rapid photo-thermal processing (RPP). As compared to furnace processing and RTP, RPP provides higher diffusion coefficient, lower stress and lower microscopic defects. In this work, a custom designed automated photo assisted processing system was built from individual parts and an incoherent light source. This photo-assisted processing system is used to anneal silica clad silicon fibers and deposit thin-films. To the best of our knowledge, incoherent light source based rapid photo-thermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination, Raman spectroscopy and electrical measurements showed a considerable enhancement of structural and crystalline properties of RPP treated silicon fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers. To explore further applications of RPP, thin-films of Calcium Copper Titanate (CaCu3Ti4O12) or CCTO and Copper (I) Oxide (Cu2O) were also deposited using photo-assisted metal-organic chemical vapor deposition (MOCVD) on Si/SiO2 and n-Si substrate respectively. CCTO is one of the most researched giant dielectric constant materials in recent years. The given photo-assisted MOCVD approach provided polycrystalline CCTO growth on a SiO2 surface with grain sizes as large as 410 nm. Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. X-ray diffraction study revealed a preferred orientation, as (200) oriented crystals of Cu2O are grown on both substrates. Also, electrical characterization of Cu2O/n-Si devices showed the lowest saturation current density of 1.5x10-12 A/cm 2 at zero bias. As a result, photo-assisted thermal processing has the potential of making the process more effective with enhanced device performance.

Mitigation of cadmium and arsenic in rice grain by applying different silicon fertilizers in contaminated fields.

PubMed

Wang, Hong-Yan; Wen, Shi-Lin; Chen, Peng; Zhang, Lu; Cen, Kuang; Sun, Guo-Xin

2016-02-01

A field experiment was established to support the hypothesis that application of different silicon (Si) fertilizers can simultaneously reduce cadmium (Cd) and arsenic (As) concentration in rice grain. The "semi-finished product of Si-potash fertilizer" treatment at the high application of 9000 kg/ha (NP+S-KSi9000) significantly reduced the As concentration in rice grain by up to 20.1%, compared with the control. Si fertilization reduces the Cd concentration in rice considerably more than the As concentration. All Si fertilizers apart from sodium metasilicate (Na2SiO3) exhibited a high ability to reduce Cd concentration in rice grain. The Si-calcium (CaSi) fertilizer is the most effective in the mitigation of Cd concentration in rice grain. The CaSi fertilizer applied at 9000 kg/ha (NPK+CaSi9000) and 900 kg/ha (NPK+CaSi900) reduced the Cd concentration in rice grain about 71.5 and 48.0%, respectively, while the Si-potash fertilizer at 900 kg/ha (NP+KSi900), the semi-finished product of Si-potash fertilizer at both 900 kg/ha (NP+S-KSi900) and 9000 kg/ha (NP+S-KSi9000), and the rice straw (NPK+RS) treatments reduced the Cd concentration in rice grain about 42, 26.5, 40.7, and 23.1%, respectively. The results of this investigation demonstrated the potential effects of Si fertilizers in reducing Cd and As concentrations in rice grain.

Growth kinetics of white graphene (h-BN) on a planarised Ni foil surface

PubMed Central

Cho, Hyunjin; Park, Sungchan; Won, Dong-Il; Kang, Sang Ook; Pyo, Seong-Soo; Kim, Dong-Ik; Kim, Soo Min; Kim, Hwan Chul; Kim, Myung Jong

2015-01-01

The morphology of the surface and the grain orientation of metal catalysts have been considered to be two important factors for the growth of white graphene (h-BN) by chemical vapour deposition (CVD). We report a correlation between the growth rate of h-BN and the orientation of the nickel grains. The surface of the nickel (Ni) foil was first polished by electrochemical polishing (ECP) and subsequently annealed in hydrogen at atmospheric pressure to suppress the effect of the surface morphology. Atmospheric annealing with hydrogen reduced the nucleation sites of h-BN, which induced a large crystal size mainly grown from the grain boundary with few other nucleation sites in the Ni foil. A higher growth rate was observed from the Ni grains that had the {110} or {100} orientation due to their higher surface energy. PMID:26156068

High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration

NASA Astrophysics Data System (ADS)

Ma, Qing; Chiras, S.; Clarke, D. R.; Suo, Z.

1995-08-01

Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (˜2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm-1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line.

Deposition and characterization of silicon thin-films by aluminum-induced crystallization

NASA Astrophysics Data System (ADS)

Ebil, Ozgenc

Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined to be 0.9 eV and depended on the nature of the interfacial oxide layer. Poly-Si layers prepared by AIC technique can be used as seed layers for epitaxial growth of bulk Si layer or as back contacts in c-Si based solar cells.

Theoretical-Experimental Analysis of the Effects of Grain Boundaries on the Electrical Properties of SOI (Silicon-on-Insulator) MOSFETS.

DTIC Science & Technology

1983-11-01

work on recrystallization of polycrystalline silicon ( polysilicon ) films deposited on silicon-dioxide has demonstrated remarkable improvement in film...quality, and thus has identified another possibly viable 1SO technology for ICs. The polysilicon -on-S10 2 technology not only has the advantages alluded...and consequently higher areal device densities. Virtually all the research to date on polysilicon -on-SiO 2 has concentrated on the

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Hong, E-mail: h-yu@seu.edu.cn; Chen, Hong-Bo

In this article, a new semi-continuum model is built to describe the fundamental vibration frequency of the silicon nanowires in <111> orientation. The Keating potential model and the discrete nature in the width and the thickness direction of the silicon nanowires in <111> orientation are applied in the new semi-continuum model. Based on the Keating model and the principle of conservation of energy, the vibration frequency of the silicon nanowires with the triangle, the rhombus, and the hexagon cross sections are derived. It is indicated that the calculation results based on this new model are accordant with the simulation resultsmore » of the software based on molecular dynamics (MD).« less

Guided ultrasonic wave beam skew in silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okoro, Chukwudi, E-mail: chukwudi.okoro@nist.gov; Obeng, Yaw; Levine, Lyle E.

2014-06-28

One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-silicon via (TSV) interconnects, “as-received” and after 1000 thermal cycles. For both test conditions, significant fluctuations in the measured normal and shear stresses with depth are attributed to variations in the Cu grain orientation. Nevertheless, the mean hydrostatic stresses in the “as-received” Cu TSV were very low, at (16 ± 44) MPa, most likely due to room temperature stress relaxation. In contrast, the mean hydrostatic stresses alongmore » the entire length of the Cu TSV that had undergone 1000 thermal cycles (123 ± 37) MPa were found to be eight times greater, which was attributed to increased strain-hardening. The evolution in stresses with thermal cycling is a clear indication that the impact of Cu TSVs on front-end-of-line (FEOL) device performance will change through the lifetime of the 3D stacked dies, and ought to be accounted for during FEOL keep-out-zone design rules development.« less

Neutron-irradiation creep of silicon carbide materials beyond the initial transient

DOE PAGES

Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; ...

2016-06-04

Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10 –7 [dpa –1 MPa –1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

Nanostructure size determination in p-type porous silicon by the use of transmission electron diffraction image processing

NASA Astrophysics Data System (ADS)

Ramirez-Porras, A.

2005-06-01

The structure of p-type porous silicon (PS) has been investigated by the use of transmission electron diffraction (TED) microscopy and image processing. The results suggest the presence of well oriented crystalline phases and polycrystalline phases characterized by random orientation. These phases are believed to be formed by spheres with a mean diameter of 4.3 nm and a standard deviation of 1.3 nm.

Modeling and Studying the Effect of Texture and Elastic Anisotropy of Copper Microstructure in Nanoscale Interconnects on Reliability in Integrated Circuits

NASA Astrophysics Data System (ADS)

Basavalingappa, Adarsh

Copper interconnects are typically polycrystalline and follow a lognormal grain size distribution. Polycrystalline copper interconnect microstructures with a lognormal grain size distribution were obtained with a Voronoi tessellation approach. The interconnect structures thus obtained were used to study grain growth mechanisms, grain boundary scattering, scattering dependent resistance of interconnects, stress evolution, vacancy migration, reliability life times, impact of orientation dependent anisotropy on various mechanisms, etc. In this work, the microstructures were used to study the impact of microstructure and elastic anisotropy of copper on thermal and electromigration induced failure. A test structure with copper and bulk moduli values was modeled to do a comparative study with the test structures with textured microstructure and elastic anisotropy. By subjecting the modeled test structure to a thermal stress by ramping temperature down from 400 °C to 100 °C, a significant variation in normal stresses and pressure were observed at the grain boundaries. This variation in normal stresses and hydrostatic stresses at the grain boundaries was found to be dependent on the orientation, dimensions, surroundings, and location of the grains. This may introduce new weak points within the metal line where normal stresses can be very high depending on the orientation of the grains leading to delamination and accumulation sites for vacancies. Further, the hydrostatic stress gradients act as a driving force for vacancy migration. The normal stresses can exceed certain grain orientation dependent critical threshold values and induce delamination at the copper and cap material interface, thereby leading to void nucleation and growth. Modeled test structures were subjected to a series of copper depositions at 250 °C followed by copper etch at 25 °C to obtain initial stress conditions. Then the modeled test structures were subjected to 100,000 hours ( 11.4 years) of simulated thermal stress at an elevated temperature of 150 °C. Vacancy migration due to concentration gradients, thermal gradients, and mechanical stress gradients were considered under the applied thermal stress. As a result, relatively high concentrations of vacancies were observed in the test structure due to a driving force caused by the pressure gradients resulting from the elastic anisotropy of copper. The grain growth mechanism was not considered in these simulations. Studies with two grain analysis demonstrated that the stress gradients developed will be severe when (100) grains are adjacent to (111) grains, therefore making them the weak points for potentially reliability failures. Ilan Blech discovered that electromigration occurs above a critical product of the current density and metal length, commonly referred as Blech condition. Electromigration stress simulations in this work were carried out by subjecting test structures to scaled current densities to overcome the Blech condition of (jL)crit for small dimensions of test structure and the low temperature stress condition used. Vacancy migration under the electromigration stress conditions was considered along with the vacancy migration induced stress evolution. A simple void growth model was used which assumes voids start to form when vacancies reach a critical level. Increase of vacancies in a localized region increases the resistance of the metal line. Considering a 10% increase in resistance as a failure criterion, the distributions of failure times were obtained for given electromigration stress conditions. Bimodal/multimodal failure distributions were obtained as a result. The sigma values were slightly lower than the ones commonly observed from experiments. The anisotropy of the elastic moduli of copper leads to the development of significantly different stress values which are dependent on the orientation of the grains. This results in some grains having higher normal stress than the others. This grain orientation dependent normal stress can reach a critical stress necessary to induce delamination at the copper and cap interface. Time taken to reach critical stress was considered as time to fail and distributions of failure times were obtained for structures with different grain orientations in the microstructure for different critical stress values. The sigma values of the failure distributions thus obtained for different constant critical stress values had a strong dependence of on the critical stress. It is therefore critical to use the appropriate critical stress value for the delamination of copper and cap interface. The critical stress necessary to overcome the local adhesion of the copper and the cap material interface is dependent on grain orientation of the copper. Simulations were carried out by considering grain orientation dependent critical normal stress values as failure criteria. The sigma value thus obtained with selected critical stress values were comparable to sigma values commonly observed from experiments.

Evidence for interstellar SiC in the Murray carbonaceous meteorite

NASA Technical Reports Server (NTRS)

Bernatowicz, Thomas; Wopenka, Brigitte; Fraundorf, Gail; Ming, Tang; Anders, Edward

1987-01-01

Silicon carbide has been identified in two separates from the Murray carbonaceous chondrite that are enriched 20,000-fold in isotopically anomalous neon and xenon. The SiC is present in the form of crystalline grains 0.1-1 micron in size. Cubic and 111-plane-twinned cubic are the most common ordered polytypes observed so far. The anomalous isotopic composition of its carbon, nitrogen, and silicon indicates a presolar origin, probably in the atmospheres of red giants. An additional silicon- and oxygen-rich phase shows large isotropic anomalies in nitrogen and silicon, also associated with a presolar origin.

Method for forming metallic silicide films on silicon substrates by ion beam deposition

DOEpatents

Zuhr, Raymond A.; Holland, Orin W.

1990-01-01

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Surface and Internal Structure of Pristine Presolar Silicon Carbide

NASA Technical Reports Server (NTRS)

Stroud, Rhonda, M.; Bernatowicz, Thomas J.

2005-01-01

Silicon carbide is the most well-studied type of presolar grain. Isotope measurements of thousands [1,2] and structural data from over 500 individual grains have been reported [3]. The isotope data indicate that approximately 98% originated in asymptotic giant branch stars and 2% in supernovae. Although tens of different polytypes of SiC are known to form synthetically, only two polytypes have been reported for presolar grains. Daulton et al. [3] found that for SiC grains isolated from Murchison by acid treatments, 79.4% are 3C cubic beta-SiC, 2.7% are 2H hexagonal alpha-SiC, 17.1% are intergrowths of and , and 0.9% are heavily disordered. They report that the occurrence of only the and polytypes is consistent with the observed range of condensation temperatures of circumstellar dust for carbon stars. Further constraint on the formation and subsequent alteration of the grains can be obtained from studies of the surfaces and interior structure of grains in pristine form, i.e., prepared without acid treatments [4,5]. The acid treatments remove surface coatings, produce etch pits around defect sites and could remove some subgrains. Surface oxides have been predicted by theoretical modeling as a survival mechanism for SiC grains exposed to the hot oxidizing solar nebula [6]. Scanning electron microscopy studies of pristine SiC shows some evidence for the existence of oxide and organic coatings [4]. We report herein on transmission electron microscopy studies of the surface and internal structure of two pristine SiC grains, including definitive evidence of an oxide rim on one grain, and the presence of internal TiC and AlN grains.

78 FR 59059 - Grain-Oriented Electrical Steel From China, Czech Republic, Germany, Japan, Korea, Poland, and...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-25

... INTERNATIONAL TRADE COMMISSION [Investigation Nos. 701-TA-505 and 731-TA-1231-1237 (Preliminary)] Grain-Oriented Electrical Steel From China, Czech Republic, Germany, Japan, Korea, Poland, and Russia... Republic, Germany, Japan, Korea, Poland, and Russia that are alleged to be sold in the United States at...

Advances in ultrasonic testing of austenitic stainless steel welds. Towards a 3D description of the material including attenuation and optimisation by inversion

NASA Astrophysics Data System (ADS)

Moysan, J.; Gueudré, C.; Ploix, M.-A.; Corneloup, G.; Guy, Ph.; Guerjouma, R. El; Chassignole, B.

In the case of multi-pass welds, the material is very difficult to describe due to its anisotropic and heterogeneous properties. Anisotropy results from the metal solidification and is correlated with the grain orientation. A precise description of the material is one of the key points to obtain reliable results with wave propagation codes. A first advance is the model MINA which predicts the grain orientations in multi-pass 316-L steel welds. For flat position welding, good predictions of the grains orientations were obtained using 2D modelling. In case of welding in position the resulting grain structure may be 3D oriented. We indicate how the MINA model can be improved for 3D description. A second advance is a good quantification of the attenuation. Precise measurements are obtained using plane waves angular spectrum method together with the computation of the transmission coefficients for triclinic material. With these two first advances, the third one is now possible: developing an inverse method to obtain the material description through ultrasonic measurements at different positions.

The effect of silicon on iron plaque formation and arsenic accumulation in rice genotypes with different radial oxygen loss (ROL).

PubMed

Wu, Chuan; Zou, Qi; Xue, Sheng-Guo; Pan, Wei-Song; Huang, Liu; Hartley, William; Mo, Jing-Yu; Wong, Ming-Hung

2016-05-01

Rice is one of the major pathways of arsenic (As) exposure in human food chain, threatening over half of the global population. Greenhouse pot experiments were conducted to examine the effects of Si application on iron (Fe) plaque formation, As uptake and rice grain As speciation in indica and hybrid rice genotypes with different radial oxygen loss (ROL) ability. The results demonstrated that Si significantly increased root and grain biomass. Indica genotypes with higher ROL induced greater Fe plaque formation, compared to hybrid genotypes and sequestered more As in Fe plaque. Silicon applications significantly increased Fe concentrations in iron plaque of different genotypes, but it decreased As concentrations in the roots, straws and husks by 28-35%, 15-35% and 32-57% respectively. In addition, it significantly reduced DMA accumulation in rice grains but not inorganic As accumulation. Rice of indica genotypes with higher ROL accumulated lower concentrations of inorganic As in grains than hybrid genotypes with lower ROL. Copyright © 2016 Elsevier Ltd. All rights reserved.

Mechanism of competitive grain growth in a curvilinear channel of crystal-sorter during the orientational solidification of nickel-based heat-resistant alloy

NASA Astrophysics Data System (ADS)

Monastyrskiy, V. P.; Pozdnyakov, A. N.; Ershov, M. Yu.; Monastyrskiy, A. V.

2017-07-01

Using numerical simulation in the ProCAST program complex, the conditions of the solidification of heat-resistant nickel alloy in curvilinear channels of a ceramic mold have been investigated. It has been shown that, in practically important cases, the vector of the temperature gradient is oriented along the axis of the curvilinear channel. In a spiral crystal selector, a cyclic change in the preferred direction of growth occurs because of the cyclic change in the direction of the vector of the temperature gradient. The fact that the vector of the temperature gradient is almost always directed along the axis of the curvilinear channel makes it possible to govern the orientation of the vector of the temperature gradient in space and, therefore, to obtain a grain with the preferred crystallographic orientation. Based on the results of this investigation, a method of the grain selection with a desired azimuthal orientation is proposed.

Deformation-Induced Recrystallization of Magnesium Single Crystals at Ambient Temperature

NASA Astrophysics Data System (ADS)

Molodov, K. D.; Al-Samman, T.; Molodov, D. A.

2015-04-01

Specially oriented magnesium single crystals were subjected to plane strain compression along the <112¯0> direction in c-axis extension at ambient temperature. The samples exhibited outstanding formability deforming up to a logarithmic final strain of -1. Investigations by optical and orientation imaging microscopy revealed that massive {101¯2} extension twinning at low strains consumed the whole sample and resulted in new soft orientations for slip. Observations also indicated that additional twinning took place in the completely twinned matrix by secondary and tertiary twinning events. At advanced stages of deformation newly formed, equiaxed small grains were observed within numerous bands related to former deformation twins. These “recrystallized” grains characterized by a low grain orientation spread of less than 1° generated new orientations, which led to a substantial weakening and randomization of the texture during deformation up to very large strains. The reported results in this paper are discussed with regard to the microstructure evolution arising from multiple twinning and continuous dynamic recrystallization at room temperature.

Twin related domains in 3D microstructures of conventionally processed and grain boundary engineered materials

DOE PAGES

Lind, Jonathan; Li, Shiu Fai; Kumar, Mukul

2016-05-20

The concept of twin-limited microstructures has been explored in the literature as a crystallographically constrained grain boundary network connected via only coincident site lattice (CSL) boundaries. The advent of orientation imaging has made classification of twin-related domains (TRD) or any other orientation cluster experimentally accessible in 2D using EBSD. With the emergence of 3D orientation mapping, a comparison of TRDs in measured 3D microstructures is performed in this paper and compared against their 2D counterparts. The TRD analysis is performed on a conventionally processed (CP) and a grain boundary engineered (EM) high purity copper sample that have been subjected tomore » successive anneal procedures to promote grain growth. Finally, the EM sample shows extremely large TRDs which begin to approach that of a twin-limited microstructure, while the TRDs in the CP sample remain relatively small and remote.« less

Growth mechanism of extension twin variants during annealing of pure magnesium: An ‘ex situ’ electron backscattered diffraction investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabat, R.K.

Pure magnesium was subjected to plastic deformation through CSM (continuous stiffness measurement) indentation followed by annealing at 200 °C for 30 min. Nucleation of no new grains was observed neither at the twin–twin intersections nor at the multiple twin variants of a grain after annealing. Significant growth of off-basal twin orientation compared to basal twin orientation was observed in the sample after annealing and is attributed to the partial coherent nature of twin boundary in the later case. Further, growth of twins was independent of the strain distribution between parent and twinned grains. - Highlights: • An ‘ex situ’ EBSDmore » of pure Mg during annealing was investigated. • Nucleation of no new grains was observed. • Significant growth of off-basal twin orientation was observed. • Growth of twins may be attributed to the partial coherent nature of twin boundary.« less

The Evolution of In-Grain Misorientation Axes (IGMA) During Deformation of Wrought Magnesium Alloy AZ31

NASA Astrophysics Data System (ADS)

Chun, Y. B.; Davies, C. H. J.

Understanding deformation mechanisms is a prerequisite for the development of more formable magnesium alloys. We have developed a novel approach based on analysis of in-grain misorientation axes which allows identification of the dominant slip system for a large number of grains. We investigated the effects of orientations and temperatures on active deformation mechanisms during the rolling of AZ31, including slip, deformation twinning and deformation banding. The IGMA analysis suggests that increasing rolling temperature promotes activation of prism slip which enhances the rollability of the plate favorably oriented for this slip mode. The approach also reveals an orientation-dependent occurrence of deformation banding and its crystallographic relationship with parent grain. It is concluded that IGMA analysis can be effectively used to study deformation mechanism in hcp metals, and can be used as a criterion for validating some crystal plasticity models.

Observations of Fabric Development in Polycrystalline Ice at Basal Pressures: Methods and Initial Results

NASA Astrophysics Data System (ADS)

Breton, D. J.; Baker, I.; Cole, D. M.

2012-12-01

Understanding and predicting the flow of polycrystalline ice is crucial to ice sheet modeling and paleoclimate reconstruction from ice cores. Ice flow rates depend strongly on the fabric (i.e. the distribution of grain sizes and crystallographic orientations) which evolves over time and enhances the flow rate in the direction of applied stress. The mechanisms for fabric evolution in ice have been extensively studied at atmospheric pressures, but little work has been done to observe these processes at the high pressures experienced deep within ice sheets where long-term changes in ice rheology are expected to have significance. We conducted compressive creep tests on a 917 kg m-3 polycrystalline ice specimen at 20 MPa hydrostatic pressure, thus simulating ~2,000 m depth. Initial specimen grain orientations were random, typical grain diameters were 1.2 mm, and the applied creep stress was 0.3 MPa. Subsequent microstructural analyses on the deformed specimen and a similarly prepared, undeformed specimen allowed characterization of crystal fabric evolution under pressure. Our microstructural analysis technique simultaneously collected grain shape and size data from Scanning Electron Microscope (SEM) micrographs and obtained crystallographic orientation data via Electron BackScatter Diffraction (EBSD). Combining these measurements allows rapid analysis of the ice fabric over large numbers of grains, yielding statistically useful numbers of grain size and full c- and a-axis grain orientation data. The combined creep and microstructural data demonstrate pressure-dependent effects on the mechanical and microstructural evolution of polycrystalline ice. We discuss possible mechanisms for the observed phenomena, and future directions for hydrostatic creep testing.

Adhesion and friction of iron and gold in contact with elemental semiconductors

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Brainard, W. A.

1977-01-01

Adhesion and friction experiments were conducted with single crystals of iron and gold in contact with single crystals of germanium and silicon. Surfaces were examined in the sputter cleaned state and in the presence of oxygen and a lubricant. All experiments were conducted at room temperature with loads of 1 to 50 grams, and sliding friction was at a sliding velocity of 0.7 mm/min. Results indicate that the friction nature of metals in contact with semiconductors is sensitive to orientation, that strong adhesion of metals to both germanium and silicon occurs, and that friction is lower with silicon than with germanium for the same orientation. Surface effects are highly sensitive to environment. Silicon, for example, behaves in an entirely brittle manner in the clean state, but in the presence of a lubricant the surface deforms plastically.

Olivine and spinel fabric development in lineated peridotites

NASA Astrophysics Data System (ADS)

German, Lindsey; Newman, Julie; Chatzaras, Vasileios; Kruckenberg, Seth; Stewart, Eric; Tikoff, Basil

2016-04-01

Investigation of olivine and spinel fabrics in lineated harzburgites from the Red Hills peridotite massif, New Zealand, reveals that the spinel grain population records the same orientation of the principal finite strain axes as olivine grains, however, olivine grains generally record stronger fabric anisotropy. Further, olivine crystallographic preferred orientation (CPO) reflects the constrictional kinematic context of these rocks. In these harzburgites, deformed at ~1200 °C and >6 kbar, spinel grains are variably oriented and display weak to no CPO. Shape fabric in spinels, determined using X-ray computed tomography (XRCT) indicates a range of geometries (L>S, L=S and LS tectonites) for olivine in all samples. CPO, plotted with respect to lineation and foliation as defined by XRCT analyses of spinel grains, is characterized by [100] maxima parallel or subparallel to the lineation; [010] and [001] form girdles perpendicular to the lineation, consistent with the D-type CPO for olivine. Olivine CPO is typically interpreted in the context of deformation conditions (e.g., temperature, stress) based on experimental studies. However, the D-type CPO for olivine is generally associated with deformation at relatively lower temperatures than suggested by the mineral compositions in these rocks. Our data suggest that olivine CPO may not only respond to deformation conditions, but may be controlled by the geometry of the finite strain ellipsoid. These texture and fabric data suggest that spinel is stronger than olivine at these deformation conditions. The olivine CPO and SPO are consistent with the lineations and foliations as defined by spinel grain geometries, indicating that spinel grains deformed concurrently with the olivine. That the aggregate shape fabric of the spinel grains is consistent with the SPO of the olivine suggests that spinel deformation may be dominated by passive rotation in a weaker matrix. These data indicate that the aggregates of spinel grains do record the orientation of the principal finite strain axes; however, spinel fabric geometry (e.g., prolate vs. oblate fabrics) may deviate from the fabric geometry recorded by the olivine, the dominant mineral in peridotites. Further investigation of the deformation and reaction history of the Red Hills lineated harzburgites may provide further insights into the observed deviation between the spinel and olivine fabric geometries.