Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, S.; Greczynski, G.; Jensen, J.

2012-07-01

Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies.more » Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.« less

Measurements and Modelling of Sputtering Rates with Low Energy Ions

NASA Astrophysics Data System (ADS)

Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

1996-10-01

The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

Pretreatment of lubricated surfaces with sputtered cadmium oxide

NASA Technical Reports Server (NTRS)

Fusaro, Robert L. (Inventor)

1991-01-01

Cadmium oxide is used with a dry solid lubricant on a surface to improve wear resistance. The surface topography is first altered by photochemical etching to a predetermined pattern. The cadmium oxide is then sputtered onto the altered surface to form an intermediate layer to more tightly hold the dry lubricant, such as graphite.

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

NASA Astrophysics Data System (ADS)

Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

2016-10-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

Phase composition and tribomechanical properties of Ti-B-C nanocomposite coatings prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Sánchez-López, J. C.; Abad, M. D.; Justo, A.; Gago, R.; Endrino, J. L.; García-Luis, A.; Brizuela, M.

2012-09-01

Protective nanocomposite coatings based on hard ceramic phases (TiC, TiB2) combined with amorphous carbon (a-C) are of interest because of their adequate balance between mechanical and tribological performances. In this work, Ti-B-C nanocomposite coatings were prepared by co-sputtering of graphite and TiB2 targets. Varying the discharge power ratio applied to the graphite and TiB2 targets from 0 to 2, the a-C content in the coatings could be tuned from 0 to 60%, as observed by means of Raman and x-ray photoelectron spectroscopy (XPS). The microstructural characterization demonstrated a progressive decrease in crystallinity from an initial nanocrystalline (nc) TiB2-like structure to a distorted TiBxCy ternary compound with increasing C concentration. X-ray absorption near-edge structure measurements on the B K-edge helped to determine a hexagonal arrangement around the B atoms in the ternary TiBxCy phase. A fitting analysis of the C 1s XPS peak allowed us to evaluate the relative amount of a-C and TiBxCy components. A drastic change in hardness (from 52 to 13 GPa) and friction coefficient values (from 0.8 to 0.2) is noticed when moving from nc-TiB2 to TiBC/a-C nanocomposites. The fraction of a-C necessary to decrease the friction below 0.2 was found to be 45%. Raman observation of the wear tracks determined the presence of disordered sp2-bonded carbon phase associated with the diminution of the friction level.

HOPG/ZnO/HOPG pressure sensor

NASA Astrophysics Data System (ADS)

Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

2017-12-01

Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

Diagnostic evaluations of a beam-shielded 8-cm mercury ion thruster

NASA Technical Reports Server (NTRS)

Nakanishi, S.

1978-01-01

An engineering model thruster fitted with a remotely actuated graphite fiber polyimide composite beam shield was tested in a 3- by 6.5-meter vacuum facility for in-situ assessment of beam shield effects on thruster performance. Accelerator drain current neutralizer floating potential and ion beam floating potential increased slightly when the shield was moved into position. A target exposed to the low density regions of the ion beam was used to map the boundaries of energetic fringe ions capable of sputtering. The particle efflux was evaluated by measurement of film deposits on cold, heated, bare, and enclosed glass slides.

Characterization of chemical sputtering using the Mark II DiMES porous plug injector in attached and semi-detached divertor plasmas of DIII-D

NASA Astrophysics Data System (ADS)

McLean, A. G.; Davis, J. W.; Stangeby, P. C.; Allen, S. L.; Boedo, J. A.; Bray, B. D.; Brezinsek, S.; Brooks, N. H.; Fenstermacher, M. E.; Groth, M.; Haasz, A. A.; Hollmann, E. M.; Isler, R. C.; Lasnier, C. J.; Mu, Y.; Petrie, T. W.; Rudakov, D. L.; Watkins, J. G.; West, W. P.; Whyte, D. G.; Wong, C. P. C.

2009-06-01

An improved, self-contained gas injection system for the divertor material evaluation system (DiMES) on DIII-D has been employed for in situ study of chemical erosion in the tokamak divertor environment. To minimize perturbation to local plasma, the Mark II porous plug injector (PPI) releases methane through a porous graphite surface at the outer strike point at a rate precisely controlled by a micro-orifice flow restrictor to be approximately equal as that predicted for intrinsic chemical sputtering. Effective photon efficiencies resulting from CH 4 are found to be 58 ± 12 in an attached divertor ( ne ˜ 1.5 × 10 13/cm 3, Te ˜ 25 eV, Tsurf ˜ 450 K), and 94 ± 20 in a semi-detached cold divertor ( ne ˜ 6.0 × 10 13/cm 3, Te ˜ 2-3 eV, Tsurf ˜ 350 K). These values are significantly more than previous measurements in similar plasma conditions, indicating the importance of the injection rate and local re-erosion for the integrity of this analysis. The contribution of chemical versus physical sputtering to the source of C + at the target is assessed through simultaneous measurement of CII line, and CD plus CH-band emissions during release of CH 4 from the PPI, then compared with that seen in intrinsic sputtering.

Characterization of graded TiC layers deposited by HiPIMS method

NASA Astrophysics Data System (ADS)

Bohovicova, Jana; Bonova, Lucia; Halanda, Juraj; Ivan, Jozef; Mesko, Marcel; Advanced Technologies Research Institute Team; Institute of Electronic; Photonic Team

2016-09-01

An advanced yet recent development of sputter technique is high power impulse magnetron sputtering (HiPIMS), in which short, energetic pulses are applied to the target, leading to a formation of an ultra-dense plasma in front of the cathode, that provide a high degree of ionization of sputtered material, and consequently enable to control the energy and the direction of the deposition flux. This gives a possibility to alter composition and microstructure in a controlled manner, enables the optimization of TiC for tribological applications. The aim of this work is to link physical phenomena in transient HiPIMS discharges to microstructural and compositional properties of graded TiC thin films. It was found that Ti bottom layer is contamination free. Compared to the direct current magnetron sputtering films, we observed an element specific reduction of impurities measured by ERDA by a factor 3 for N, 4 for H and by a factor of 20 for O. The high purity of Ti layer is partly explained by gas rarefaction and the cleaning effect of the bombarding ions. Graphitization degree of carbon top layer was elucidated by Raman spectroscopy. The compositional effects are correlated with differences in the film microstructure revealed by SEM, XRD and TEM analysis. This work was supported by VEGA, Project No. 1/0503/15 and APVV, Project No. 15-0168.

Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz

2013-01-15

The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inertmore » gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.« less

Dual-ion-beam deposition of carbon films with diamond-like properties

NASA Technical Reports Server (NTRS)

Mirtich, M. J.; Swec, D. M.; Angus, J. C.

1985-01-01

A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

Dual ion beam deposition of carbon films with diamondlike properties

NASA Technical Reports Server (NTRS)

Mirtich, M. J.; Swec, D. M.; Angus, J. C.

1984-01-01

A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

Nanopatterning of swinging substrates by ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, whichmore » have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.« less

Direct formation of a current collector layer on a partially reduced graphite oxide film using sputter-assisted metal deposition to fabricate high-power micro-supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Byun, Segi; Yu, Jin

2016-03-01

When a reduced graphite oxide (RGO) freestanding film is fabricated on a supercapacitor cell via compression onto a current collector, there are gaps between the film and the current collector, even if the cell is carefully assembled. These gaps can induce increases in the electrical series resistance (ESR) of the cell, resulting in degradation of the cell's electrochemical performance. Here, to effectively reduce the ESR of the supercapacitor, metal sputtering deposition is introduced. This enables the direct formation of the current collector layer on a partially reduced GO (pRGO) film, the model system. Using metal sputtering, a nickel (Ni) layer with a thickness <1 μm can be created easily on one side of the pRGO film. Good electrical interconnection between the pRGO film and the current collector can be obtained using a Ni layer formed on the pRGO film. The pRGO film sustains its film form with high packing density (∼1.31 g cm-3). Furthermore, the Ni-sputtered pRGO film with optimized Ni thickness exhibits remarkable enhancement of its electrochemical performance. This includes a superior rate capability and semi-permanent cycle life compared with the untreated pRGO film. This is due to the significant decrease in the ESR of the film.

Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Three-dimensional particle simulation of back-sputtered carbon in electric propulsion test facility

NASA Astrophysics Data System (ADS)

Zheng, Hongru; Cai, Guobiao; Liu, Lihui; Shang, Shengfei; He, Bijiao

2017-03-01

The back-sputtering deposition on thruster surface caused by ion bombardment on chamber wall material affects the performance of thrusters during the ground based electric propulsion endurance tests. In order to decrease the back-sputtering deposition, most of vacuum chambers applied in electric propulsion experiments are equipped with anti-sputtering targets. In this paper, a three-dimensional model of plume experimental system (PES) including double layer anti-sputtering target is established. Simulation cases are made to simulate the plasma environment and sputtering effects when an ion thruster is working. The particle in cell (PIC) method and direct simulation Monte Carlo (DSMC) method is used to calculate the velocity and position of particles. Yamamura's model is used to simulate the sputtering process. The distribution of sputtered anti-sputtering target material is presented. The results show that the double layer anti-sputtering target can significantly reduce the deposition on thruster surface. The back-sputtering deposition rates on thruster exit surface for different cases are compared. The chevrons on the secondary target are rearranged to improve its performance. The position of secondary target has relation with the ion beam divergence angle, and the radius of the vacuum chamber. The back-sputtering deposition rate is lower when the secondary target covers the entire ion beam.

Supported plasma sputtering apparatus for high deposition rate over large area

DOEpatents

Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

1977-01-01

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

Effects of polycrystallinity in nano patterning by ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr; Yoon, D.

Employing graphites with distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam sputtering. The grains influence the growth of the ripples in a highly anisotropic fashion; both the mean uninterrupted ripple length along the ridges and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on the terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains, indicating that the mass transport across the grain boundaries should efficiently proceedmore » by both thermal diffusion and ion-induced processes.« less

Sb-Te alloy nanostructures produced on a graphite surface by a simple annealing process

NASA Astrophysics Data System (ADS)

Kuwahara, Masashi; Uratsuji, Hideaki; Abe, Maho; Sone, Hayato; Hosaka, Sumio; Sakai, Joe; Uehara, Yoichi; Endo, Rie; Tsuruoka, Tohru

2015-08-01

We have produced Sb-Te alloy nanostructures from a thin Sb2Te3 layer deposited on a highly oriented pyrolytic graphite substrate using a simple rf-magnetron sputtering and annealing technique. The size, shape, and chemical composition of the structures were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectrometry (EDX), respectively. The shape of the nanostructures was found to depend on the annealing temperature; nanoparticles appear on the substrate by annealing at 200 °C, while nanoneedles are formed at higher temperatures. Chemical composition analysis has revealed that all the structures were in the composition of Sb:Te = 1:3, Te rich compared to the target composition Sb2Te3, probably due to the higher movability of Te atoms on the substrate compared with Sb. We also tried to observe the production process of nanostructures in situ using SEM. Unfortunately, this was not possible because of evaporation in vacuum, suggesting that the formation of nanostructures is highly sensitive to the ambient pressure.

Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

PubMed

Khun, N W; Liu, E

2010-07-01

Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films.

Nanoscale multilayer Me-graphite coatings grown by combined steered cathodic arc/unbalanced magnetron sputtering

NASA Astrophysics Data System (ADS)

Kok, Yin Nan

Low friction, nanoscale multilayer carbon/chromium (C/Cr) coatings were successfully deposited by the combined steered cathodic arc/unbalanced magnetron sputtering technique (also known as Arc Bond Sputtering or ABS) using a Hauzer HTC 1000-4 PVD coater. The work described in this thesis has been directed towards understanding the effect of ion irradiation on the composition, microstructure, and functional properties of C/Cr coatings. This has been achieved by varying the bias voltage, U[B], over a wide range between -65 V and -550 V. C/Cr coatings were deposited in three major steps: (i) Cr+ ion etching using a steered cathodic arc discharge at a substrate bias voltage of -1200 V, (ii) deposition of a 0.25 mum thick CrN base layer by reactive unbalanced magnetron sputtering to enhance the adhesion, and (iii) deposition of C/Cr coatings by unbalanced magnetron sputtering from three graphite targets and one chromium target at 260°C. The coatings were deposited at different bias voltages (U[B]) from -65 V to -550 V in a non-reactive Ar atmosphere.C/Cr coatings exhibit excellent adhesion (critical load, L[C] > 70 N), with hardness ranging from 6.8 to 25.1 GPa depending on the bias voltage. The friction coefficient of C/Cr coatings was found to reduce from 0.22 to 0.16 when the bias voltage was increased from U[B] = -65 to -95 V. The relevance of C/Cr coatings for actual practical applications was demonstrated using dry high-speed milling trials on automotive aluminium alloy (Al-Si8Cu3Fe). The results showed that C/Cr coated cemented carbide ball-nose end mills prepared at U[B] = -95 V (70 at.% C, 30 at.% Cr) enhance the tool performance and the tool life compared to the uncoated tools by a factor of two, suggesting the potential for use in dry high-speed machining of "sticky" alloys such as aluminum. Different film morphologies were observed in the investigated bias voltage range between U[B] = -65 and -550 V using XTEM. With increasing bias voltage from U[B] = -65 to -95 V, the structure changed from columnar, with carbon accumulated at the column boundaries, to a dense structure which comprised randomly distributed onionlike carbon clusters. A novel nanostructure was observed within this bias voltage range, in which the basic nano-lamellae obtained as a result of substrate rotation in front of the C and Cr targets were modified by an ion-irradiation induced nanocolumnar structure. Further increases in the bias voltage to U[B] = -350 V and U[B] = -450 V led to segregation and self-organisation of the carbon atoms induced by the high energy ion bombardment and, finally, to the formation of a new type of self-organised multilayer structure. A coating growth model accounting for the influence of ion bombardment on the growing C/Cr film was introduced to explain the phase separation and formation of the selforganised layered nanostructure.A novel experimental set-up for the investigation of tribocorrosion was built based on a modification of the conventional Scanning Reference Electrode Technique (SRET). The device comprises a ball on rotating cylinder contact configuration combined with a SRET electrochemical device. This combination may contribute significantly to the understanding of wear-corrosion synergism.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

Al2O3), silicon carbide ( SiC ) and graphite (C). The significant differences being ion bombardment sputter yield and secondary electron emission...channel cross-section is radially symmetric about ( mirrored above and below) discharge channel centerline from the anode to the exit plane, whereas

Static evaluation of surface coatings for compliant gas bearings in an oxidizing atmosphere to 650 C

NASA Technical Reports Server (NTRS)

Bhushan, B.; Gray, S.

1978-01-01

Hard wear-resistant coatings and soft low shear strength coatings were developed for an air-lubricated compliant journal bearing for a future automotive gas turbine engine. The coatings were expected to function in either 540 or 650 C ambient. Soft lubricant coatings were generally limited in temperature. Therefore emphasis was on the hard wear-resistant coatings. The coating materials covered were TiC, B4C, Cr3C2, WC, SiC, CrB2, TiB2, Cr2O3, Al2O3, Si3N4, Tribaloy 800, CaF2, CaF2-BaF2 eutectic, Ni-Co, silver, CdO-graphite and proprietary compounds. The coatings on test coupons were subjected to static oven screening tests. The test consisted of exposure of material samples in an oven for 300 h at the maximum temperature (540 or 650 C) and ten temperature cycles from room temperature to the maximum service temperature. On the basis of the specimen examinations the following coatings were recommended for future wear tests: TiC (sputtered), Cr2O3 (sputtered), Si3N4 (sputtered), CdO and graphite (fused), Kaman DES (a proprietary coating), CrB2 (plasma sprayed), Cr3C2 (detonation gun) and NASA PS-106 (plasma sprayed).

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Magnetically attached sputter targets

DOEpatents

Makowiecki, D.M.; McKernan, M.A.

1994-02-15

An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

Magnetically attached sputter targets

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.

1994-01-01

An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

Magnetron sputtering source

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

1994-01-01

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, André

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.« less

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE PAGES

Anders, André

2017-03-21

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.« less

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

NASA Astrophysics Data System (ADS)

Anders, André

2017-05-01

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

Magnetron sputtering source

DOEpatents

Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

1994-08-02

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fleddermann, C.B.

The sputter deposition of high-temperature superconducting thin films was studied using optical emission spectroscopy. Argon or oxygen ions generated by a Kaufman ion gun were used to sputter material from a composite target containing yttrium, barium, and copper which had been oxygen annealed. The impact of ions onto the target generates a plume of sputtered material which includes various excited-state atoms and molecules. In these studies, optical emission is detected for all the metallic components of the film as well as for metallic oxides ejected from the target. No emission due to atomic or molecular oxygen was detected, however. Variationsmore » in sputter conditions such as changes in sputter ion energy, oxygen content of the beam, and target temperature are shown to greatly affect the emission intensity, which may correlate to the characteristics of the sputtering and the quality of the films deposited. The results suggest that optical emission from the sputtered material may be useful for real-time monitoring and control of the sputter deposition process.« less

Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Liu, Cui; Li, Guo-Qing; Gou, Wei; Mu, Zong-Xin; Zhang, Cheng-Wu

2004-11-01

Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5 μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

Optical plasma monitoring of Y-Ba-Cu-O rf sputter target transients

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1989-12-01

The plasma emission spectra resulting from rf sputtering Y-Ba-Cu-O targets were observed as a function of sputter time. Although most lines of the observed spectra are not attributable to target species, peaks associated with each of the cation elements were resolved. The Ba and Cu peaks can be used as tracking indicators of process conditions. For example, switching from an O2/Ar sputter atmosphere to pure Ar enhanced the Ba peak much more than that associated with Cu. The emission spectra from a newly fabricated target exhibited a slow first-order transient response in seeking equilibrium with the rf plasma. The transient response of a previously sputtered target is also first order but has a much shorter time constant.

Ion sputter textured graphite electrode plates

NASA Technical Reports Server (NTRS)

Curren, A. N.; Forman, R.; Sovey, J. S.; Wintucky, E. G. (Inventor)

1983-01-01

A specially textured surface of pyrolytic graphite exhibits extremely low yields of secondary electrons and reduced numbers of reflected primary electrons after impingement of high energy primary electrons. Electrode plates of this material are used in multistage depressed collectors. An ion flux having an energy between 500 iV and 1000 iV and a current density between 1.0 mA/sq cm and 6.0 mA/sq cm produces surface roughening or texturing which is in the form of needles or spires. Such textured surfaces are especially useful as anode collector plates in high tube devices.

Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

NASA Technical Reports Server (NTRS)

Sovey, J. S.

1978-01-01

Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

Studies of lithiumization and boronization of ATJ graphite PFCs for NSTX-U

NASA Astrophysics Data System (ADS)

Dominguez, Javier; Bedoya, Felipe; Krstic, Predrag; Allain, Jean Paul; Neff, Anton; Luitjohan, Kara

2016-10-01

We examine and compare the effects of boron and lithium conditioning on ATJ graphite surfaces bombarded by low-energy deuterium atoms on deuterium retention and chemical sputtering. We use atomistic simulations and compare them with experimental in-situ ex-tempore studies with X-ray photoelectron spectroscopy (XPS), to understand the effects of deuterium exposure on the chemistry in lithiated, boronized and oxidized amorphous carbon surfaces. Our results are validated qualitatively by comparison with experiments and with classical-quantum molecular dynamic simulations. We explain the important role of oxygen in D retention for lithiated surfaces and the suppression of the oxygen role by boron in boronized surfaces. The calculated increase of the oxygen role in deuterium uptake after D accumulation in a B-C-O surface configuration is discussed. The sputtering yield per low-energy D impact is significantly smaller in boronized surfaces than in lithiated surfaces. This work was supported by the USDOE Grants DE-SC0013752 (PSK), DE-SC0010717 (JPA and FB) and DE-SC0010719 (AN) and by National council for Science and Technology of Mexico (CONACyT) through postdoctoral fellowship # 267898 (JD).

Sputtered silicon nitride coatings for wear protection

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1982-01-01

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Auger Electrons as Probes for Composite Micro- and Nano- structured Materials: Application to Solid Electrolyte Interphases in Graphite and Silicon-Graphite Electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalaga, Kaushik; Shkrob, Ilya A.; Haasch, Richard T.

In this study, Auger electron spectroscopy (AES) combined with ion sputtering profilometry, Xray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) have been used in a complementary fashion to examine chemical and microstructural changes in graphite (Gr) and silicon/graphite (Si/Gr) blends contained in the negative electrodes of lithium-ion cells. We demonstrate how AES can be used to characterize morphology of the solid-electrolyte interphase (SEI) deposits in such heterogeneous media, complementing well-established methods, such as XPS and SEM. In this way we demonstrate that the SEI does not consist of uniformly thick layers on the graphite and silicon; the thickness ofmore » the SEI layers in cycle-life aged electrodes follows an exponential distribution with a mean of ca. 13 nm for the graphite and ca. 20-25 nm for the silicon nanoparticles (with a crystalline core of 50-70 nm in diameter). Furthermore, a “sticky-sphere” model, in which Si nanoparticles are covered with a layer of polymer binder (that is replaced by the SEI during cycling) of variable thickness is introduced to account for the features observed.« less

Auger Electrons as Probes for Composite Micro- and Nano- structured Materials: Application to Solid Electrolyte Interphases in Graphite and Silicon-Graphite Electrodes

DOE PAGES

Kalaga, Kaushik; Shkrob, Ilya A.; Haasch, Richard T.; ...

2017-10-05

In this study, Auger electron spectroscopy (AES) combined with ion sputtering profilometry, Xray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) have been used in a complementary fashion to examine chemical and microstructural changes in graphite (Gr) and silicon/graphite (Si/Gr) blends contained in the negative electrodes of lithium-ion cells. We demonstrate how AES can be used to characterize morphology of the solid-electrolyte interphase (SEI) deposits in such heterogeneous media, complementing well-established methods, such as XPS and SEM. In this way we demonstrate that the SEI does not consist of uniformly thick layers on the graphite and silicon; the thickness ofmore » the SEI layers in cycle-life aged electrodes follows an exponential distribution with a mean of ca. 13 nm for the graphite and ca. 20-25 nm for the silicon nanoparticles (with a crystalline core of 50-70 nm in diameter). Furthermore, a “sticky-sphere” model, in which Si nanoparticles are covered with a layer of polymer binder (that is replaced by the SEI during cycling) of variable thickness is introduced to account for the features observed.« less

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions.more » These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.« less

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Simulations of carbon sputtering in fusion reactor divertor plates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marian, J; Zepeda-Ruiz, L A; Gilmer, G H

2005-10-03

The interaction of edge plasma with material surfaces raises key issues for the viability of the International Thermonuclear Reactor (ITER) and future fusion reactors, including heat-flux limits, net material erosion, and impurity production. After exposure of the graphite divertor plate to the plasma in a fusion device, an amorphous C/H layer forms. This layer contains 20-30 atomic percent D/T bonded to C. Subsequent D/T impingement on this layer produces a variety of hydrocarbons that are sputtered back into the sheath region. We present molecular dynamics (MD) simulations of D/T impacts on amorphous carbon layer as a function of ion energymore » and orientation, using the AIREBO potential. In particular, energies are varied between 10 and 150 eV to transition from chemical to physical sputtering. These results are used to quantify yield, hydrocarbon composition and eventual plasma contamination.« less

Hierarchical structure graphitic-like/MoS2 film as superlubricity material

NASA Astrophysics Data System (ADS)

Gong, Zhenbin; Jia, Xiaolong; Ma, Wei; Zhang, Bin; Zhang, Junyan

2017-08-01

Friction and wear result in a great amount of energy loss and the invalidation of mechanical parts, thus it is necessary to minimize friction in practical application. In this study, the graphitic-like/MoS2 films with hierarchical structure were synthesized by the combination of pulse current plasma chemical-vapor deposition and medium frequency unbalanced magnetron sputtering in preheated environment. This hierarchical structure composite with multilayer nano sheets endows the films excellent tribological performance, which easily achieves macro superlubricity (friction coefficient ∼0.004) under humid air. Furthermore, it is expected that hierarchical structure of graphitic-like/MoS2 films could match the requirements of large scale, high bear-capacity and wear-resistance of actual working conditions, which could be widely used in the industrial production as a promising superlubricity material.

Magnetron-Sputtered Amorphous Metallic Coatings

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Mehra, M.; Khanna, S. K.

1985-01-01

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oya, Y.; Sato, M.; Uchimura, H.

2015-03-15

Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{submore » 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)« less

Processing of sputter targets using current activated pressure assisted densification

NASA Astrophysics Data System (ADS)

Chaney, Neil Russell

Thin Film deposition is a process that has been around since the beginning of the twentieth century and has become an integral part of the microfabrication and nanofabrication industries. Sputter deposition is a method of physical vapor deposition (PVD) in which a target is bombarded with ions and atoms are ejected and deposited as a thin film on a substrate. Despite extensive research on the direct process of sputtering thin films from targets to substrates, not much work has been done on studying the effect of processing on the microstructure of a target. In the first part of this work, the development of a PVD chamber is explored along with a few modifications and improvements developed along the way. A multiple process PVD chamber was equipped with three different types of PVD processes: sputtering, evaporation, and electron-beam deposition. In the second part of this work, the effect of processing of sputter targets on deposited films is explored. Multiple targets of Copper and yttria stabilized zirconia were produced using CAPAD. The effect of the processing on the microstructure of the targets was determined. The targets were then sputtered into films to study the effects of the target grain size on their properties. The effect of power and pressure were also measured. Increased power led to increased deposition rates while higher vacuum caused deposition rates to decrease.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

PubMed

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

Ion beam sputter target and method of manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason

A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a mainmore » tile also formed in a green state and the assembly can then be compacted and then sintered.« less

Low energy sputtering of cobalt by cesium ions

NASA Technical Reports Server (NTRS)

Handoo, A.; Ray, Pradosh K.

1989-01-01

An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, H.S., E-mail: 160184@mail.csc.com.tw; Chiu, C.H.; Hong, I.T.

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes,more » which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.« less

Sputter target

DOEpatents

Gates, Willard G.; Hale, Gerald J.

1980-01-01

The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

Fabrication and Vibration Results of 30-cm Pyrolytic Graphite Ion Optics

NASA Technical Reports Server (NTRS)

DePano, Michael K.; Hart, Stephen L.; Hanna, Andrew A.; Schneider, Analyn C.

2004-01-01

Boeing Electron Dynamic Devices, Inc. is currently developing pyrolytic graphite (PG) grids designed to operate on 30-cm NSTAR-type thrusters for the Carbon Based Ion Optics (CBIO) program. The PG technology effort of the CBIO program aims to research PG as a flightworthy material for use in dished ion optics by designing, fabricating, and performance testing 30-cm PG grids. As such, PG grid fabrication results will be discussed as will PG design considerations and how they must differ from the NSTAR molybdenum grid design. Surface characteristics and surface processing of PG will be explored relative to effects on voltage breakdown. Part of the CBIO program objectives is to understand the erosion of PG due to Xenon ion bombardment. Discussion of PG and CC sputter yields will be presented relative to molybdenum. These sputter yields will be utilized in the life modeling of carbon-based grids. Finally, vibration results of 30-cm PG grids will be presented and compared to a first-order model generated at Boeing EDD. Performance testing results of the PG grids will not be discussed in this paper as it has yet to be completed.

Modeling of surface temperature effects on mixed material migration in NSTX-U

NASA Astrophysics Data System (ADS)

Nichols, J. H.; Jaworski, M. A.; Schmid, K.

2016-10-01

NSTX-U will initially operate with graphite walls, periodically coated with thin lithium films to improve plasma performance. However, the spatial and temporal evolution of these films during and after plasma exposure is poorly understood. The WallDYN global mixed-material surface evolution model has recently been applied to the NSTX-U geometry to simulate the evolution of poloidally inhomogenous mixed C/Li/O plasma-facing surfaces. The WallDYN model couples local erosion and deposition processes with plasma impurity transport in a non-iterative, self-consistent manner that maintains overall material balance. Temperature-dependent sputtering of lithium has been added to WallDYN, utilizing an adatom sputtering model developed from test stand experimental data. Additionally, a simplified temperature-dependent diffusion model has been added to WallDYN so as to capture the intercalation of lithium into a graphite bulk matrix. The sensitivity of global lithium migration patterns to changes in surface temperature magnitude and distribution will be examined. The effect of intra-discharge increases in surface temperature due to plasma heating, such as those observed during NSTX Liquid Lithium Divertor experiments, will also be examined. Work supported by US DOE contract DE-AC02-09CH11466.

RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

DOEpatents

Jeffery, F.R.; Shanks, H.R.

1980-08-26

A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Ion beam sputtering of fluoropolymers

NASA Technical Reports Server (NTRS)

Sovey, J. S.

1978-01-01

Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

Surface Roughness of Various Diamond-Like Carbon Films

NASA Astrophysics Data System (ADS)

Liu, Dongping; Liu, Yanhong; Chen, Baoxiang

2006-11-01

Atomic force microscopy is used to estimate and compare the surface morphology of hydrogenated and hydrogen-free diamond-like carbon (DLC) films. The films were prepared by using DC magnetron sputtering of a graphite target, pulsed cathodic carbon arcs, electron cyclotron resonance (ECR), plasma source ion implantation and dielectric barrier discharge (DBD). The difference in the surface structure is presented for each method of deposition. The influences of various discharge parameters on the film surface properties are discussed based upon the experimental results. The coalescence process via the diffusion of adsorbed carbon species is responsible for the formation of hydrogen-free DLC films with rough surfaces. The films with surface roughness at an atomic level can be deposited by energetic ion impacts in a highly ionized carbon plasma. The dangling bonds created by atomic hydrogen lead to the uniform growth of hydrocarbon species at the a-C:H film surfaces of the ECR or DBD plasmas.

Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

2015-01-01

For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

High temperature self-lubricating coatings for air lubricated foil bearings for the automotive gas turbine engine

NASA Technical Reports Server (NTRS)

Bhushan, B.

1980-01-01

coating combinations were developed for compliant surface bearings and journals to be used in an automotive gas turbine engine. The coatings were able to withstand the sliding start/stops during rotor liftoff and touchdown and occasional short time, high speed rubs under representative loading of the engine. Some dozen coating variations of CdO-graphite, Cr2O3 (by sputtering) and CaF2 (plasma sprayed) were identified. The coatings were optimized and they were examined for stoichiometry, metallurgical condition, and adhesion. Sputtered Cr2O3 was most adherent when optimum parameters were used and it was applied on an annealed (soft) substrate. Metallic binders and interlayers were used to improve the ductility and the adherence.

Development of ion beam sputtering techniques for actinide target preparation

NASA Astrophysics Data System (ADS)

Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

1985-06-01

Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

Using the Multipole Resonance Probe to Stabilize the Electron Density During a Reactive Sputter Process

NASA Astrophysics Data System (ADS)

Oberberg, Moritz; Styrnoll, Tim; Ries, Stefan; Bienholz, Stefan; Awakowicz, Peter

2015-09-01

Reactive sputter processes are used for the deposition of hard, wear-resistant and non-corrosive ceramic layers such as aluminum oxide (Al2O3) . A well known problem is target poisoning at high reactive gas flows, which results from the reaction of the reactive gas with the metal target. Consequently, the sputter rate decreases and secondary electron emission increases. Both parameters show a non-linear hysteresis behavior as a function of the reactive gas flow and this leads to process instabilities. This work presents a new control method of Al2O3 deposition in a multiple frequency CCP (MFCCP) based on plasma parameters. Until today, process controls use parameters such as spectral line intensities of sputtered metal as an indicator for the sputter rate. A coupling between plasma and substrate is not considered. The control system in this work uses a new plasma diagnostic method: The multipole resonance probe (MRP) measures plasma parameters such as electron density by analyzing a typical resonance frequency of the system response. This concept combines target processes and plasma effects and directly controls the sputter source instead of the resulting target parameters.

Quality of Graphite Target for Biological/Biomedical/Environmental Applications of 14C-Accelerator Mass Spectrometry

PubMed Central

2010-01-01

Catalytic graphitization for 14C-accelerator mass spectrometry (14C-AMS) produced various forms of elemental carbon. Our high-throughput Zn reduction method (C/Fe = 1:5, 500 °C, 3 h) produced the AMS target of graphite-coated iron powder (GCIP), a mix of nongraphitic carbon and Fe3C. Crystallinity of the AMS targets of GCIP (nongraphitic carbon) was increased to turbostratic carbon by raising the C/Fe ratio from 1:5 to 1:1 and the graphitization temperature from 500 to 585 °C. The AMS target of GCIP containing turbostratic carbon had a large isotopic fractionation and a low AMS ion current. The AMS target of GCIP containing turbostratic carbon also yielded less accurate/precise 14C-AMS measurements because of the lower graphitization yield and lower thermal conductivity that were caused by the higher C/Fe ratio of 1:1. On the other hand, the AMS target of GCIP containing nongraphitic carbon had higher graphitization yield and better thermal conductivity over the AMS target of GCIP containing turbostratic carbon due to optimal surface area provided by the iron powder. Finally, graphitization yield and thermal conductivity were stronger determinants (over graphite crystallinity) for accurate/precise/high-throughput biological, biomedical, and environmental14C-AMS applications such as absorption, distribution, metabolism, elimination (ADME), and physiologically based pharmacokinetics (PBPK) of nutrients, drugs, phytochemicals, and environmental chemicals. PMID:20163100

Method of sputter etching a surface

DOEpatents

Henager, Jr., Charles H.

1984-01-01

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

Method of sputter etching a surface

DOEpatents

Henager, C.H. Jr.

1984-02-14

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

Sputtering erosion in ion and plasma thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1995-01-01

An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

Sputtering of uranium

NASA Technical Reports Server (NTRS)

Gregg, R.; Tombrello, T. A.

1978-01-01

Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Guoqiang; Bao, Wurigumula; Yuan, Yifei

To spread lithium ion batteries into large-scale energy storage technologies, high ener-gy/power densities and long cycling life of carbon-based anodes must be achieved. This re-quires revolutionary design of the anode’s architectures that can facilitate the fast electronic and ionic transport, as well as accommodate the electrode structural instability. Here we re-port a thin-film electrode design and demonstrate its use in flexible, and large-area carbon-based anode assemblies. The fabrication of electrodes is realized by sputtering a graphite tar-get in the high-purity nitrogen atmosphere, then highly-defect nitrogen-doped carbon nano-fibers are deposited vertically onto copper substrates with a thin film configuration. The high-ly-defectmore » nitrogen-doping enhances the lithium storage and transport, the orientation grown mechanism improves the charge transfer, and the compact configuration makes the high tap density possible. As a result, the thin films exhibit high specific capacities of ~ 500 mAh g-1, namely a volume capacity of ~ 100 mAh cm-3. They also exhibit stable cycle performance (400 mAh g-1 after 200 cycles) and good rate capability (450 mAh g-1 at 1 A g-1 rate). This work opens up a new carbon-based anode design by using sputtering technology for effec-tively incorporating high content nitrogen into carbon matrices. Such electrode architecture significantly improves the electrochemical performance of carbon-based materials.« less

Dianion diagnostics in DESIREE: High-sensitivity detection of Cn2 - from a sputter ion source

NASA Astrophysics Data System (ADS)

Chartkunchand, K. C.; Stockett, M. H.; Anderson, E. K.; Eklund, G.; Kristiansson, M. K.; Kamińska, M.; de Ruette, N.; Blom, M.; Björkhage, M.; Källberg, A.; Löfgren, P.; Reinhed, P.; Rosén, S.; Simonsson, A.; Zettergren, H.; Schmidt, H. T.; Cederquist, H.

2018-03-01

A sputter ion source with a solid graphite target has been used to produce dianions with a focus on carbon cluster dianions, Cn2 -, with n = 7-24. Singly and doubly charged anions from the source were accelerated together to kinetic energies of 10 keV per atomic unit of charge and injected into one of the cryogenic (13 K) ion-beam storage rings of the Double ElectroStatic Ion Ring Experiment facility at Stockholm University. Spontaneous decay of internally hot Cn2 - dianions injected into the ring yielded Cn- anions with kinetic energies of 20 keV, which were counted with a microchannel plate detector. Mass spectra produced by scanning the magnetic field of a 90° analyzing magnet on the ion injection line reflect the production of internally hot C72 - - C242 - dianions with lifetimes in the range of tens of microseconds to milliseconds. In spite of the high sensitivity of this method, no conclusive evidence of C62 - was found while there was a clear C72 - signal with the expected isotopic distribution. This is consistent with earlier experimental studies and with theoretical predictions. An upper limit is deduced for a C62 - signal that is two orders-of-magnitude smaller than that for C72 -. In addition, CnO2- and CnCu2- dianions were detected.

Late-time particle emission from laser-produced graphite plasma

NASA Astrophysics Data System (ADS)

Harilal, S. S.; Hassanein, A.; Polek, M.

2011-09-01

We report a late-time "fireworks-like" particle emission from laser-produced graphite plasma during its evolution. Plasmas were produced using graphite targets excited with 1064 nm Nd: yttrium aluminum garnet (YAG) laser in vacuum. The time evolution of graphite plasma was investigated using fast gated imaging and visible emission spectroscopy. The emission dynamics of plasma is rapidly changing with time and the delayed firework-like emission from the graphite target followed a black-body curve. Our studies indicated that such firework-like emission is strongly depended on target material properties and explained due to material spallation caused by overheating the trapped gases through thermal diffusion along the layer structures of graphite.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, D.B.; Wiley, J.D.

1989-09-12

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

Monte Carlo simulation of the influence of pressure and target-substrate distance on the sputtering process for metal and semiconductor layers

NASA Astrophysics Data System (ADS)

Bouazza, Abdelkader; Settaouti, Abderrahmane

2016-07-01

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3-1 Pa) and target-substrate distances (8-20 cm) is obtained.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, David B.; Wiley, John D.

1989-01-01

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1998-01-01

An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

PECVD Growth of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

McAninch, Ian; Arnold, James O. (Technical Monitor)

2001-01-01

Plasma enhanced chemical vapor deposition (PECVD), using inductively coupled plasma, has been used to grow carbon nanotubes (CNTs) and graphitic carbon fibers (GCF) on substrates sputtered with aluminum and iron catalyst. The capacitive plasma's power has been shown to cause a transition from nanotubes to nanofibers, depending on the strength of the plasma. The temperature, placement, and other factors have been shown to affect the height and density of the tube and fiber growth.

Erosion and re-deposition of lithium and boron coatings under high-flux plasma bombardment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrams, Tyler Wayne

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Electromagnetic Torque in Tokamaks with Toroidal Asymmetries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Logan, Nikolas Christopher

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Mixed composition materials suitable for vacuum web sputter coating

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

1996-01-01

Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

Simple model of surface roughness for binary collision sputtering simulations

NASA Astrophysics Data System (ADS)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-02-01

It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

Very low pressure high power impulse triggered magnetron sputtering

DOEpatents

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Phase separation in NiCrN coatings induced by N2 addition in the gas phase: A way to generate magnetic thin films by reactive sputtering of a non-magnetic NiCr target

NASA Astrophysics Data System (ADS)

Luciu, I.; Duday, D.; Choquet, P.; Perigo, E. A.; Michels, A.; Wirtz, T.

2016-12-01

Magnetic coatings are used for a lot of applications from data storage in hard discs, spintronics and sensors. Meanwhile, magnetron sputtering is a process largely used in industry for the deposition of thin films. Unfortunately, deposition of magnetic coatings by magnetron sputtering is a difficult task due to the screening effect of the magnetic target lowering the magnetic field strength of the magnet positioned below the target, which is used to generate and trap ions in the vicinity of the target surface to be sputtered. In this work we present an efficient method to obtain soft magnetic thin films by reactive sputtering of a non-magnetic target. The aim is to recover the magnetic properties of Ni after dealloying of Ni and Cr due to the selective reactivity of Cr with the reactive nitrogen species generated during the deposition process. The effects of nitrogen content on the dealloying and DC magnetron sputtering (DCMS) deposition processes are studied here. The different chemical compositions, microstructures and magnetic properties of DCMS thin films obtained by sputtering in reactive gas mixtures with different ratios of Ar/N2 from a non-magnetic Ni-20Cr target have been determined. XPS data indicate that the increase of nitrogen content in the films has a strong influence on the NiCr phase decomposition into Ni and CrN, leading to ferromagnetic coatings due to the Ni phase. XRD results show that the obtained Ni-CrN films consist of a metallic fcc cubic Ni phase mixed with fcc cubic CrN. The lattice parameter decreases with the N2 content and reaches the theoretical value of the pure fcc-Ni, when Cr is mostly removed from the Ni-Cr phase. Dealloying of Cr from a Ni80-Cr20 solid solution is achieved in our experimental conditions and the deposition of Ni ferromagnetic coatings embedding CrN from a non-magnetic target is possible with reactive DC magnetron sputtering.

Sputtering. [as deposition technique in mechanical engineering

NASA Technical Reports Server (NTRS)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Radionuclide measurements by accelerator mass spectrometry at Arizona

NASA Technical Reports Server (NTRS)

Jull, A. J. T.; Donahue, D. J.; Zabel, T. H.

1986-01-01

Over the past years, Tandem Accelerator Mass Spectrometry (TAMS) has become established as an important method for radionuclide analysis. In the Arizona system the accelerator is operated at a thermal voltage of 1.8MV for C-14 analysis, and 1.6 to 2MV for Be-10. Samples are inserted into a cesium sputter ion source in solid form. Negative ions sputtered from the target are accelerated to about 25kV, and the injection magnet selects ions of a particular mass. Ions of the 3+ charge state, having an energy of about 9MeV are selected by an electrostatic deflector, surviving ions pass through two magnets, where only ions of the desired mass-energy product are selected. The final detector is a combination ionization chamber to measure energy loss (and hence, Z), and a silicon surface-barrier detector which measures residual energy. After counting the trace iosotope for a fixed time, the injected ions are switched to the major isotope used for normalization. These ions are deflected into a Faraday cup after the first high-energy magnet. Repeated measurements of the isotope ratio of both sample and standards results in a measurement of the concentration of the radionuclide. Recent improvements in sample preparation for C-14 make preparation of high-beam current graphite targets directly from CO2 feasible. Except for some measurements of standards and backgrounds for Be-10 measurements to date have been on C-14. Although most results have been in archaeology and quaternary geology, studies have been expanded to include cosmogenic C-14 in meteorites. The data obtained so far tend to confirm the antiquity of Antarctic meteorites from the Allan Hills site. Data on three samples of Yamato meteorites gave terrestrial ages of between about 3 and 22 thousand years.

Characterization of diamond thin films and related materials

NASA Astrophysics Data System (ADS)

McKindra, Travis Kyle

Thin carbon films including sputtered deposited graphite and CO 2 laser-assisted combustion-flame deposited graphite and diamond thin films were characterized using optical and electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Amorphous carbon thin films were deposited by DC magnetron sputtering using Ar/O2 gases. The film morphology changed with the oxygen content. The deposition rate decreased as the amount of oxygen increased due to oxygen reacting with the growing film. The use of oxygen in the working gas enhanced the crystalline nature of the films. Graphite was deposited on WC substrates by a CO2 laser-assisted O2/C2H2 combustion-flame method. Two distinct microstructural areas were observed; an inner core of dense material surrounded by an outer shell of lamellar-like material. The deposits were crystalline regardless of the laser power and deposition times of a few minutes. Diamond films were deposited by a CO2 laser-assisted O 2/C2H2/C2H4 combustion-flame method with the laser focused parallel to the substrate surface. The laser enhanced diamond growth was most pronounced when deposited with a 10.532 microm CO2 laser wavelength tuned to the CH2-wagging vibrational mode of the C2H4 molecule. Nucleation of diamond thin films deposited with and without using a CO 2 laser-assisted combustion-flame process was investigated. With no laser there was nucleation of a sub-layer of grains followed by irregular grain growth. An untuned laser wavelength yielded nucleation of a sub-layer then columnar grain growth. The 10.532 microm tuned laser wavelength caused growth of columnar grains.

A new setup for experimental investigations of solar wind sputtering

NASA Astrophysics Data System (ADS)

Szabo, Paul S.; Berger, Bernhard M.; Chiba, Rimpei; Stadlmayr, Reinhard; Aumayr, Friedrich

2017-04-01

The surfaces of Mercury and Moon are not shielded by a thick atmosphere and therefore they are exposed to bombardment by charged particles, ultraviolet photons and micrometeorites. These influences lead to an alteration and erosion of the surface, and the emitted atoms and molecules form a thin atmosphere, an exosphere, around these celestial bodies [1]. The composition of these exospheres is connected to the surface composition and has been subject to flyby measurements by satellites. Model calculations which include the erosion mechanisms can be used as a method of comparison for such exosphere measurements and allow conclusions about the surface composition. Surface sputtering induced by solar wind ions hereby represents a major contribution to the erosion of the surfaces of Mercury and Moon [1]. However, the experimental database for sputtering of respective analogue materials by solar wind ions, which would be necessary for exact modelling of the space weathering process, is still in its early stages. Sputtering experiments have been performed at TU Wien during the past years using a quartz crystal microbalance (QCM) technique [2]. Target material is deposited on the quartz surface as a thin layer and the quartz's resonance frequency is measured under ion bombardment. The sputter yield can then be calculated from the frequency change and the ion current [2]. In order to remove the restrictions of a thin layer QCM target and simplify experiments with composite targets, a new QCM catcher setup was developed. In the new design, the QCM is placed beside the target holder and acts as a catcher for material that is sputtered from the target surface. By comparing the catcher signal to reference measurements and SDTrimSP simulations [3], the target sputter yield can be determined. In order to test the setup, we have performed experiments with a Au-coated QCM target under 2 keV Ar+ bombardment so that both the mass changes at the target and at the catcher could be obtained simultaneously. The results coincide very well with SDTrimSP predictions showing the feasibility of the new design [4]. Furthermore, Fe-coated QCM targets with different surface roughness were investigated in the new setup. The surface roughness represents a key factor for the solar wind induced erosion of planetary or lunar rocks. It has a strong influence on the absolute sputtering yield as well as on the spatial distribution of sputtered particles and was therefore investigated. As a next step, sputtering experiments with Mercury or Moon analogues will be conducted. Knowledge gained in the course of this research will enhance the understanding of surface sputtering by solar wind ions and used to improve theoretical models of the Mercury's and Moon's exosphere formation. References: [1] E. Kallio, et al., Planetary and Space Science, 56, 1506 (2008). [2] G. Hayderer, et al., Review of Scientific Instruments, 70, 3696 (1999). [3] A. Mutzke, R. Schneider, W. Eckstein, R. Dohmen, SDTrimSP: Version 5.00, IPP Report, 12/8, (2011). [4] B. M. Berger, P. S. Szabo, R. Stadlmayr, F. Aumayr, Nucl. Instrum. Meth. Phys. Res. B, doi: 10.1016/j.nimb.2016.11.039

Sputter deposition for multi-component thin films

DOEpatents

Krauss, A.R.; Auciello, O.

1990-05-08

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, Alan R.; Auciello, Orlando

1990-01-01

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Development of RF sputtered chromium oxide coating for wear application

NASA Technical Reports Server (NTRS)

Bhushan, B.

1979-01-01

The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

X-ray photoelectron spectroscopy study of radiofrequency sputtered chromium bromide, molybdenum disilicide, and molybdenum disulfide coatings and their friction properties

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1977-01-01

Radiofrequency sputtered coatings of CRB2, MOSI2, and MOS2 were examined by X-ray photoelectron spectroscopy. The effects of sputtering target history, deposition time, RF power level, and substrate bias on film composition were studied. Friction tests were run on RF sputtered surfaces of 440-C steel to correlate XPS data with lubricating properties. Significant deviations from stoichiometry and high oxide levels for all three compounds were related to target outgassing. The effect of biasing on these two factors depended on the compound. Improved stoichiometry correlated well with good friction and wear properties.

High rate DC-reactive sputter deposition of Y 2O 3 film on the textured metal substrate for the superconducting coated conductor

NASA Astrophysics Data System (ADS)

Kim, Ho-Sup; Park, Chan; Ko, Rock-Kil; Shi, Dongqui; Chung, Jun-Ki; Ha, Hong-Soo; Park, Yu-Mi; Song, Kyu-Jeong; Youm, Do-Jun

2005-10-01

Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77 K, self field), and Jc (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm2, respectively.

Recent advances in graphite powder-based electrodes.

PubMed

Bellido-Milla, Dolores; Cubillana-Aguilera, Laura Ma; El Kaoutit, Mohammed; Hernández-Artiga, Ma Purificación; Hidalgo-Hidalgo de Cisneros, José Luis; Naranjo-Rodríguez, Ignacio; Palacios-Santander, José Ma

2013-04-01

Graphite powder-based electrodes have the electrochemical performance of quasi-noble metal electrodes with intrinsic advantages related to the possibility of modification to enhance selectivity and their easily renewable surface, with no need for hazardous acids or bases for their cleaning. In contrast with commercial electrodes, for example screen-printed or sputtered-chip electrodes, graphite powder-based electrodes can also be fabricated in any laboratory with the form and characteristics desired. They are also readily modified with advanced materials, with relatively high reproducibility. All these characteristics make them a very interesting option for obtaining a large variety of electrodes to resolve different kinds of analytical problems. This review summarizes the state-of-the-art, advantages, and disadvantages of graphite powder-based electrodes in electrochemical analysis in the 21st century. It includes recent trends in carbon paste electrodes, devoting special attention to the use of emergent materials as new binders and to the development of other composite electrodes. The most recent advances in the use of graphite powder-modified sol-gel electrodes are also described. The development of sonogel-carbon electrodes and their use in electrochemical sensors and biosensors is included. These materials extend the possibilities of applications, especially for industrial technology-transfer purposes, and their development could affect not only electroanalytical green chemistry but other interesting areas also, for example catalysis and energy conversion and storage.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

High-density convergent plasma sputtering device for a liquid metal target using an unheated glass plate

NASA Astrophysics Data System (ADS)

Motomura, T.; Tabaru, T.

2018-06-01

A high-density convergent plasma sputtering device has been developed for a liquid metal target, using an unheated glass plate. The convergent magnetic field lines, which are produced by an external solenoid coil and a permanent magnet positioned behind the liquid metal target, effectively transport high-density plasmas near the target. In this study, a liquid gallium target was sputtered with nitrogen plasmas, without additive gas required for depositing gallium nitride films on the unheated substrates. The deposition rate of the GaN film was estimated at ˜13 nm/min at a gas pressure of 0.2 Pa. A strong diffraction peak was observed along the GaN (002) axis, with the use of an unheated glass plate and a target-substrate distance of ˜45 mm.

The effect of C content on the mechanical properties of Ti-Zr coatings.

PubMed

Rodríguez-Hernández, M G; Jiménez, O; Alvarado-Hernández, F; Flores, M; Andrade, E; Canto, C E; Ávila, C; Espinoza-Beltrán, F

2015-09-01

In this study, Ti-Zr and Ti-Zr-C coatings were deposited at room temperature via pulsed-DC magnetron sputtering. A 70Ti-30Zr at% target and a 99.99% graphite plate were used to deposit samples. In order to modify C content, coatings were deposited at different target powers such as 50, 75 and 100 W. Changes on the structure, microstructure and mechanical properties due to C addition were studied. Results indicate that the as-deposited coatings were partly crystalline and that an increment on C content stabilized α' phase and inhibited the appearance of ω precipitates. Therefore, Ti-Zr-C alloys with C>1.9 at% showed only α' phase whereas the others alloys exhibited α'+ω structures. Hardness values from 12.94 to 34.31 GPa were obtained, whereas the elastic modulus was found between 181.84 and 298 GPa. Finally, a high elastic recovery ratio (0.69-0.87) was observed as a function of composition. The overall properties of these coatings were improved due to C content increment, martensitic α' phase and nanocrystalline grain size (10-16 nm). Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of copper-free back contacts to thin film cadmium telluride solar cells

NASA Astrophysics Data System (ADS)

Viswanathan, Vijay

The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

2017-03-01

Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

Composition of RF-sputtered refractory compounds determined by X-ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1978-01-01

RF-sputtered coatings of CrB2, MoSi2, Mo2C, TiC, and MoS2 were examined by X-ray photoelectron spectroscopy (XPS). Data on stoichiometry, impurity content, and chemical bonding were obtained. The influences of sputtering target history, deposition time, RF power level, and substrate bias were studied. Significant deviations from stoichiometry and high oxide levels were related to target outgassing. The effect of substrate bias depended on the particular coating material studied.

Discharge current modes of high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Zhongzhen, E-mail: wuzz@pkusz.edu.cn; Xiao, Shu; Ma, Zhengyong

2015-09-15

Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Graettinger, T.M.

Ion beam sputtering is presently used to deposit films from single phase YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} targets. Generally, Ar+ ion beams ({approx}1500 eV) produced by Kaufman-type ion sources are used for this purpose. It has been observed that these ion beams induce compositional and morphological changes on the polycrystalline ceramic target surface, which results in the composition of sputtered flux displaying a time-dependent behavior. This in turn may lead to undesirably long times for reaching steady state conditions in the sputtering process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Graettinger, T.

Ion beam sputtering is presently used to deposit films from single phase YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} targets. Generally, Ar{sup +} ion beams ({similar to}1500 eV) produced by Kaufman-type ion sources are used for this purpose. It has been observed that these ion beams induce compositional and morphological changes on the polycrystalline ceramic target surface, which results in the composition of sputtered flux displaying a time-dependent behavior. This in turn may lead to undesirably long times for reaching steady state conditions in the sputtering process.

Development of a Muon Rotating Target for J-PARC/MUSE

NASA Astrophysics Data System (ADS)

Makimura, Shunsuke; Kobayashi, Yasuo; Miyake, Yasuhiro; Kawamura, Naritoshi; Strasser, Patrick; Koda, Akihiro; Shimomura, Koichiro; Fujimori, Hiroshi; Nishiyama, Kusuo; Kato, Mineo; Kojima, Kenji; Higemoto, Wataru; Ito, Takashi; Shimizu, Ryou; Kadono, Ryosuke

At the J-PARC muon science facility (J-PARC/MUSE), a graphite target with a thickness of 20 mm has been used in vacuum to obtain an intense pulsed muon beam from the RCS 3-GeV proton beam [1], [2]. In the current design, the target frame is constructed using copper with a stainless steel tube embedded for water cooling. The energy deposited by the proton beam at 1 MW is evaluated to be 3.3 kW on the graphite target and 600 W on the copper frame by a Monte-Carlo simulation code, PHITS [3]. Graphite materials are known to lose their crystal structure and can be shrunk under intense proton beam irradiation. Consequently, the lifetime of the muon target is essentially determined by the radiation damage in graphite, and is evaluated to be half a year [4]. Hence, we are planning to distribute the radiation damage by rotating a graphite wheel. Although the lifetime of graphite in this case will be more than 10 years, the design of the bearing must be carefully considered. Because the bearing in JPARC/MUSE is utilized in vacuum, under high radiation, and at high temperature, an inorganic and solid lubricant must be applied to the bearing. Simultaneously, the temperature of the bearing must also be decreased to extend the lifetime. In 2009, a mock-up of the Muon Rotating Target, which could heat up and rotate a graphite wheel, was fabricated. Then several tests were started to select the lubricant and to determine the structure of the Muon Rotating Target, the control system and so on. In this report, the present status of the Muon Rotating Target for J-PARC/MUSE, especially the development of a rotation system in vacuum, is described.

Particle-in-Cell Modeling of Magnetron Sputtering Devices

NASA Astrophysics Data System (ADS)

Cary, John R.; Jenkins, T. G.; Crossette, N.; Stoltz, Peter H.; McGugan, J. M.

2017-10-01

In magnetron sputtering devices, ions arising from the interaction of magnetically trapped electrons with neutral background gas are accelerated via a negative voltage bias to strike a target cathode. Neutral atoms ejected from the target by such collisions then condense on neighboring material surfaces to form a thin coating of target material; a variety of industrial applications which require thin surface coatings are enabled by this plasma vapor deposition technique. In this poster we discuss efforts to simulate various magnetron sputtering devices using the Vorpal PIC code in 2D axisymmetric cylindrical geometry. Field solves are fully self-consistent, and discrete models for sputtering, secondary electron emission, and Monte Carlo collisions are included in the simulations. In addition, the simulated device can be coupled to an external feedback circuit. Erosion/deposition profiles and steady-state plasma parameters are obtained, and modifications due to self consistency are seen. Computational performance issues are also discussed. and Tech-X Corporation.

Evolution of the secondary electron emission during the graphitization of thin C films

NASA Astrophysics Data System (ADS)

Larciprete, Rosanna; Grosso, Davide Remo; Di Trolio, Antonio; Cimino, Roberto

2015-02-01

The relation between the atomic hybridization and the secondary electron emission yield (SEY) in carbon materials has been investigated during the thermal graphitization of thin amorphous carbon layers deposited by magnetron sputtering on Cu substrates. C1s core level, valence band and Raman spectroscopy were used to follow the sp3→sp2 structural reorganization while the SEY curves as a function of the kinetic energy of the incident electron beam were measured in parallel. We found that an amorphous C layer with a thickness of a few tens of nanometers is capable to modify the secondary emission properties of the clean copper surface, reducing the maximum yield from 1.4 to 1.2. A further SEY decrease observed with the progressive conversion of sp3 hybrids into six-fold aromatic domains was related to the electronic structure close to the Fermi level of the C-films. We found that a moderate structural quality of the C layer is sufficient to notably decrease the SEY as aromatic clusters of limited size approach the secondary emission properties of graphite.

Assessing Reliability of Cold Spray Sputter Targets in Photovoltaic Manufacturing

NASA Astrophysics Data System (ADS)

Hardikar, Kedar; Vlcek, Johannes; Bheemreddy, Venkata; Juliano, Daniel

2017-10-01

Cold spray has been used to manufacture more than 800 Cu-In-Ga (CIG) sputter targets for deposition of high-efficiency photovoltaic thin films. It is a preferred technique since it enables high deposit purity and transfer of non-equilibrium alloy states to the target material. In this work, an integrated approach to reliability assessment of such targets with deposit weight in excess of 50 lb. is undertaken, involving thermal-mechanical characterization of the material in as-deposited condition, characterization of the interface adhesion on cylindrical substrate in as-deposited condition, and developing means to assess target integrity under thermal-mechanical loads during the physical vapor deposition (PVD) sputtering process. Mechanical characterization of cold spray deposited CIG alloy is accomplished through the use of indentation testing and adaptation of Brazilian disk test. A custom lever test was developed to characterize adhesion along the cylindrical interface between the CIG deposit and cylindrical substrate, overcoming limitations of current standards. A cohesive zone model for crack initiation and propagation at the deposit interface is developed and validated using the lever test and later used to simulate the potential catastrophic target failure in the PVD process. It is shown that this approach enables reliability assessment of sputter targets and improves robustness.

Small gas-phase dianions produced by sputtering and gas flooding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franzreb, Klaus; Williams, Peter

2005-12-08

We have extended our previous experiment [Schauer et al., Phys. Rev. Lett. 65, 625 (1990)] where we had produced small gas-phase dianion clusters of C{sub n}{sup 2-}(n{>=}7) by means of sputtering a graphite surface by Cs{sup +} ion bombardment. Our detection sensitivity for small C{sub n}{sup 2-} could now be increased by a factor of about 50 for odd n. Nevertheless, a search for the elusive pentamer dianion of C{sub 5}{sup 2-} was not successful. As an upper limit, the sputtered flux of C{sub 5}{sup 2-} must be at least a factor of 5000 lower than that of C{sub 7}{supmore » 2-}, provided that the lifetime of C{sub 5}{sup 2-} is sufficiently long to allow its detection by mass spectrometry. When oxygen gas (flooding with either O{sub 2} or with N{sub 2}O) was supplied to the Cs{sup +}-bombarded graphite surface, small dianions of OC{sub n}{sup 2-}(5{<=}n{<=}14) and O{sub 2}C{sub 7}{sup 2-} were observed in addition to C{sub n}{sup 2-}(n{>=}7). Similarly, Cs{sup +} sputtering of graphite with simultaneous SF{sub 6} gas flooding produced SC{sub n}{sup 2-}(6{<=}n{<=}18). Mixed nitrogen-carbon or fluorine-carbon dianion clusters could not be observed by these means. Attempts to detect mixed metal-fluoride dianions for SF{sub 6} gas flooding of various Cs{sup +}-bombarded metal surfaces were successful for the case of Zr, where metastable ZrF{sub 6}{sup 2-} was observed. Cs{sup +} bombardment of a silicon carbide (SiC) wafer produced SiC{sub n}{sup 2-} (n=6,8,10). When oxygen gas was supplied to the Cs{sup +}-bombarded SiC surface, small dianions of SiOC{sub n}{sup 2-} (n=4,6,8) and of SiO{sub 2}C{sub n}{sup 2-} (n=4,6) as well as a heavier unidentified dianion (at m/z=98.5) were observed. For toluene (C{sub 7}H{sub 8}) vapor flooding of a Cs{sup +}-bombarded graphite surface, several hydrocarbon dianion clusters of C{sub n}H{sub m}{sup 2-}(n{>=}7) were produced in addition to C{sub n}{sup 2-}(n{>=}7), while smaller C{sub n}H{sub m}{sup 2-} with n{<=}6 could not be observed. BeC{sub n}{sup 2-} (n=4,6,8,10), Be{sub 2}C{sub 6}{sup 2-}, as well as BeC{sub 8}H{sub m}{sup 2-} (with m=2 and/or m=1) were observed for toluene vapor flooding of a Cs{sup +}-bombarded beryllium metal foil. The metastable pentamer {sup 9}Be{sup 12}C{sub 4}{sup 2-} at m/z=28.5 was the smallest and lightest dianion molecule that we could detect. The small dianion clusters of SC{sub n}{sup 2-}, OC{sub n}{sup 2-}, BeC{sub n}{sup 2-}, and SiO{sub m}C{sub n}{sup 2-} (m=0,1,2) have different abundance patterns. A resemblance exists between the abundance patterns of BeC{sub n}{sup 2-} and SiC{sub n}{sup 2-}, even though calculated molecular structures of BeC{sub 6}{sup 2-} and SiC{sub 6}{sup 2-} are different. The abundance pattern of SC{sub n}{sup 2-} is fairly similar to that of C{sub n}{sup 2-}.« less

Deposition of reactively ion beam sputtered silicon nitride coatings

NASA Technical Reports Server (NTRS)

Grill, A.

1982-01-01

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

Coating multilayer material with improved tribological properties obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

2017-02-01

This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

A model for sputtering from solid surfaces bombarded by energetic clusters

NASA Astrophysics Data System (ADS)

Benguerba, Messaoud

2018-04-01

A model is developed to explain and predict the sputtering from solid surfaces bombarded by energetic clusters, on the basis of shock wave generated at the impact of cluster. Under the shock compression the temperature increases causing the vaporization of material that requires an internal energy behind the shock, at least, of about twice the cohesive energy of target. The sputtering is treated as a gas of vaporized particles from a hemispherical volume behind the shock front. The sputter yield per cluster atoms is given as a universal function depending on the ratio of target to cluster atomic density and the ratio of cluster velocity to the velocity calculated on the basis of an internal energy equals about twice cohesive energy. The predictions of the model for self sputter yield of copper, gold, tungsten and of silver bombarded by C60 clusters agree well, with the corresponding data simulated by molecular dynamics.

The target material influence on the current pulse during high power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Moens, Filip; Konstantinidis, Stéphanos; Depla, Diederik

2017-10-01

The current-time characteristic during high power pulsed magnetron sputtering is measured under identical conditions for seventeen different target materials. Based on physical processes such as gas rarefaction, ion-induced electron emission, and electron impact ionization, two test parameters were derived that significantly correlate with specific features of the current-time characteristic: i) the peak current is correlated to the momentum transfer between the sputtered material and the argon gas, ii) while the observed current plateau after the peak is connected to the metal ionization rate.

An experimental investigation of fractionation by sputter deposition. [application to solar wind irradiation of lunar soil

NASA Technical Reports Server (NTRS)

Paruso, D. M.; Cassidy, W. A.; Hapke, B. W.

1978-01-01

Artificial glass targets composed of elements varying widely in atomic weight were irradiated at an angle of incidence of 45 deg by 2-keV hydrogen ions at a current density of .33 mA/sq cm, and sputtered atoms were caught on a molybdenum film. Analyses of the sputter-deposited films and unsputtered target glasses were carried out by electron microprobe. The backward-sputtered component was found to be enriched in elements of low atomic weight, while the forward-sputtered component was enriched in heavy atoms. These results indicate that at the lunar surface lighter elements and isotopes would tend to be ejected in backward directions, escaping directly through the openings which admit bombarding ions without first striking an adjacent grain surface; heavy elements and isotopes would be forward-sputtered deeper into the soil and be preferentially retained, contributing to the reported enrichments of heavy elements and isotopes. Additional results show that the binding energy of an element in its oxide form influences the sticking coefficient of a sputtered atom; elements of low binding energy are likely to desorb, while elements of high binding energy tend to stick to the first bounce surface.

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Advanced electric propulsion research, 1991

NASA Technical Reports Server (NTRS)

Monheiser, Jeffery M.

1992-01-01

A simple model for the production of ions that impinge on and sputter erode the accelerator grid of an ion thruster is presented. Charge-exchange and electron-impact ion production processes are considered, but initial experimental results suggest the charge-exchange process dominates. Additional experimental results show the effects of changes in thruster operating conditions on the length of the region from which these ions are drawn upstream into the grid. Results which show erosion patterns and indicate molybdenum accelerator grids erode more rapidly than graphite ones are also presented.

Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

NASA Astrophysics Data System (ADS)

Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

2013-12-01

Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

Linear facing target sputtering of the epitaxial Ga-doped ZnO transparent contact layer on GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Shin, Hyun-Su; Lee, Ju-Hyun; Kwak, Joon-Seop; Lee, Hyun Hwi; Kim, Han-Ki

2013-10-01

In this study, we reported on the plasma damage-free sputtering of epitaxial Ga-doped ZnO (GZO) films on the p-GaN layer for use as a transparent contact layer (TCL) for GaN-based light-emitting diodes (LEDs) using linear facing target sputtering (LFTS). Effective confinement of high-density plasma between faced GZO targets and the substrate position located outside of the plasma region led to the deposition of the epitaxial GZO TCL with a low sheet resistance of 25.7 Ω/s and a high transmittance of 84.6% on a p-GaN layer without severe plasma damage, which was found using the conventional dc sputtering process. The low turn-on voltage of the GaN-based LEDs with an LFTS-grown GZO TCL layer that was grown at a longer target-to-substrate distance (TSD) indicates that the plasma damage of the GaN-LED could be effectively reduced by adjusting the TSD during the LFTS process.

Modeling of beryllium sputtering and re-deposition in fusion reactor plasma facing components

NASA Astrophysics Data System (ADS)

Zimin, A. M.; Danelyan, L. S.; Elistratov, N. G.; Gureev, V. M.; Guseva, M. I.; Kolbasov, B. N.; Kulikauskas, V. S.; Stolyarova, V. G.; Vasiliev, N. N.; Zatekin, V. V.

2004-08-01

Quantitative characteristics of Be-sputtering by hydrogen isotope ions in a magnetron sputtering system, the microstructure and composition of the sputtered and re-deposited layers were studied. The energies of H + and D + ions varied from 200 to 300 eV. The ion flux density was ˜3 × 10 21 m -2 s -1. The irradiation doses were up to 4 × 10 25 m -2. For modeling of the sputtered Be-atom re-deposition at increased deuterium pressures (up to 0.07 torr), a mode of operation with their effective return to the Be-target surface was implemented. An atomic ratio O/Be ≅ 0.8 was measured in the re-deposited layers. A ratio D/Be decreases from 0.15 at 375 K to 0.05 at 575 K and slightly grows in the presence of carbon and tungsten. The oxygen concentration in the sputtered layers does not exceed 3 at.%. The atomic ratio D/Be decreases there from 0.07 to 0.03 at target temperatures increase from 350 to 420 K.

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

NASA Astrophysics Data System (ADS)

Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

1992-03-01

A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

Modeling of life limiting phenomena in the discharge chamber of an electron bombardment ion thruster

NASA Technical Reports Server (NTRS)

Handoo, Arvind K.; Ray, Pradosh K.

1991-01-01

An experimental facility to study the low energy sputtering of metal surfaces with ions produced by an ion gun is described. The energy of the ions ranged from 10 to 500 eV. Cesium ions with energies from 100 to 500 eV were used initially to characterize the operation of the ion gun. Next, argon and xenon ions were used to measure the sputtering yields of cobalt (Co), Cadmium (Cd), and Chromium (Cr) at an operating temperature of 2x10(exp -5) Torr. The ion current ranged from 0.0135 micro-A at 500 eV. The targets were electroplated on a copper substrate. The surface density of the electroplated material was approx. 50 micro-g/sq cm. The sputtered atoms were collected on an aluminum foil surrounding the target. Radioactive tracers were used to measure the sputtering yields. The sputtering yields of Cr were found to be much higher than those of Co and Cd. The yields of Co and Cd were comparable, with Co providing the higher yields. Co and Cd targets were observed to sputter at energies as low as 10 eV for both argon and xenon ions. The Cr yields could not be measured below 20 eV for argon ions and 15 eV for xenon ions. On a linear scale the yield energy curves near the threshold energies exhibit a concave nature.

Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas

2014-07-01

This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition ratemore » from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.« less

Soft Landing of Bare Nanoparticles with Controlled Size, Composition, and Morphology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Grant E.; Colby, Robert J.; Laskin, Julia

2015-01-01

A kinetically-limited physical synthesis method based on magnetron sputtering and gas aggregation has been coupled with size-selection and ion soft landing to prepare bare metal nanoparticles on surfaces with controlled coverage, size, composition, and morphology. Employing atomic force microscopy (AFM) and scanning electron microscopy (SEM), it is demonstrated that the size and coverage of bare nanoparticles soft landed onto flat glassy carbon and silicon as well as stepped graphite surfaces may be controlled through size-selection with a quadrupole mass filter and the length of deposition, respectively. The bare nanoparticles are observed with AFM to bind randomly to the flat glassymore » carbon surface when soft landed at relatively low coverage (1012 ions). In contrast, on stepped graphite surfaces at intermediate coverage (1013 ions) the soft landed nanoparticles are shown to bind preferentially along step edges forming extended linear chains of particles. At the highest coverage (5 x 1013 ions) examined in this study the nanoparticles are demonstrated with both AFM and SEM to form a continuous film on flat glassy carbon and silicon surfaces. On a graphite surface with defects, however, it is shown with SEM that the presence of localized surface imperfections results in agglomeration of nanoparticles onto these features and the formation of neighboring depletion zones that are devoid of particles. Employing high resolution scanning transmission electron microscopy in the high angular annular dark field imaging mode (STEM-HAADF) and electron energy loss spectroscopy (EELS) it is demonstrated that the magnetron sputtering/gas aggregation synthesis technique produces single metal particles with controlled morphology as well as bimetallic alloy nanoparticles with clearly defined core-shell structure. Therefore, this kinetically-limited physical synthesis technique, when combined with ion soft landing, is a versatile complementary method for preparing a wide range of bare supported nanoparticles with selected properties that are free of the solvent, organic capping agents, and residual reactants present with nanoparticles synthesized in solution.« less

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

PubMed

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-01-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

NASA Astrophysics Data System (ADS)

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-09-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials

PubMed Central

Baszczuk, A.; Rutkowska-Gorczyca, M.; Jasiorski, M.; Małachowska, A.; Posadowski, W.; Znamirowski, Z.

2017-01-01

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In2O3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In2O3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions. PMID:29109810

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials.

PubMed

Winnicki, M; Baszczuk, A; Rutkowska-Gorczyca, M; Jasiorski, M; Małachowska, A; Posadowski, W; Znamirowski, Z; Ambroziak, A

2017-01-01

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In 2 O 3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In 2 O 3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions.

Note on the artefacts in SRIM simulation of sputtering

NASA Astrophysics Data System (ADS)

Shulga, V. I.

2018-05-01

The computer simulation program SRIM, unlike other well-known programs (MARLOWE, TRIM.SP, etc.), predicts non-zero values of the sputter yield at glancing ion bombardment of smooth amorphous targets and, for heavy ions, greatly underestimates the sputter yield at normal incidence. To understand the reasons for this, the sputtering of amorphous silicon bombarded with different ions was modeled here using the author's program OKSANA. Most simulations refer to 1 keV Xe ions, and angles of incidence cover range from 0 (normal incidence) to almost 90°. It has been shown that SRIM improperly simulates the initial stage of the sputtering process. Some other artefacts in SRIM calculations of sputtering are also revealed and discussed.

Dedicated Co-deposition System for Metallic Paramagnetic Films

DOE PAGES

Jaeckel, F.; Kotsubo, V.; Hall, J. A.; ...

2012-01-27

Here, we describe a dedicated co-sputtering/ion-mill system developed to study metallic paramagnetic films for use in magnetic microcalorimetry. Small-diameter sputtering guns allow study of several precious-metal-based paramagnetic alloy systems within a reasonable budget. We demonstrated safe operation of a 1" sputtering gun at >5x the rated maximum power, achieving deposition rates up to ~900 Å/min/gun (Cu) in our co-sputtering geometry. Demonstrated co-sputtering deposition ratios up to 100:1 allow accurate tuning of magnetic dopant concentration and eliminate the difficulty of preparing homogeneous alloy targets of extreme dilution.

Deposition of adherent Ag-Ti duplex films on ceramics in a multiple-cathode sputter deposition system

NASA Technical Reports Server (NTRS)

Honecy, Frank S.

1992-01-01

The adhesion of Ag films deposited on oxide ceramics can be increased by first depositing intermediate films of active metals such as Ti. Such duplex coatings can be fabricated in a widely used three target sputter deposition system. It is shown here that the beneficial effect of the intermediate Ti film can be defeated by commonly used in situ target and substrate sputter cleaning procedures which result in Ag under the Ti. Auger electron spectroscopy and wear testing of the coatings are used to develop a cleaning strategy resulting in an adherent film system.

Arcing and its role in PFC erosion and dust production in DIII-D

NASA Astrophysics Data System (ADS)

Rudakov, D. L.; Chrobak, C. P.; Doerner, R. P.; Krasheninnikov, S. I.; Moyer, R. A.; Umstadter, K. R.; Wampler, W. R.; Wong, C. P. C.

2013-07-01

Two types of arc tracks are observed on the plasma-facing components (PFCs) in DIII-D. "Unmagnetized" random walk tracks are produced during glow discharges; they are rare and have no importance for PFC erosion but may degrade diagnostic mirrors. "Magnetized" scratch-like type II tracks are produced by unipolar arcs during plasma operations; they are formed by "retrograde BxJ" motion of the cathode spot and are roughly perpendicular to the local magnetic field. Type II arcs cause measurable erosion of graphite, but based on the evidence available they are relatively small contributors to the total erosion of carbon in DIII-D compared to other mechanisms such as physical and chemical sputtering and ablation from leading edges. Erosion by arcing of tungsten films deposited on graphite samples was observed in Divertor Material Evaluation System (DiMES) experiments. New DiMES experiments aimed at time-resolved arc measurements are proposed.

Copper deposition on fabrics by rf plasma sputtering for medical applications

NASA Astrophysics Data System (ADS)

Segura, G.; Guzmán, P.; Zuñiga, P.; Chaves, S.; Barrantes, Y.; Navarro, G.; Asenjo, J.; Guadamuz Vargas, S., VI; Chaves, J.

2015-03-01

The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10-2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms.

Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

Sodium-22 In Supernovae

NASA Astrophysics Data System (ADS)

Amari, Sachiko

2008-05-01

There are several isotopically distinct noble gas components in meteorites. Of them, Ne-E(L), heavily enriched in 22Ne, is carried by graphite with a range of density (1.6 - 2.2 g/cm3). Bulk (=aggregates) noble gas analysis of graphite separates from the Murchison meteorite indicate that a dominant source of 22Ne is 22Na (T1/2 = 2.6 a) with varying proportions of 22Ne via 14N(α,γ)18F(e+ν)18O(α,γ)22Ne with density. Low-density graphite grains, from their isotopic signatures, are believed to have formed in supernovae. Examinations of both bulk and single-grain analyses of low-density graphite grains (Amari et al., 1995; Nichols et al., 1994) indicate that all 22Ne in low-density graphite grains is from the decay of 22Na that was produced in the O/Ne zone in supernovae. One may argue why implanted 20,22Ne was not observed in the grains, considering the fact that the mass fraction of 20Ne is 5 orders of magnitude larger than that of 22Na. Croat et al. (2003) observed TiC subgrains inside low-density graphite grains have amorphous rims with the thickness of 3 to 15 nm, indicating atom bombardment from the surrounding gas. Assuming the gas is He, they estimated the velocity is 50 km/s or less. If the relative velocities between the Ne and the graphite grains are in that range, the penetration depth into the graphite grains is 2nm. Such shallow surface layers would be sputtered once the grains hit the reverse shock and keep traveling into the hot H-rich region (Nozawa et al, 2007). It remains to be seen whether or not 22Na in higher-density graphite is from supernovae or novae, or both. Amari, S. et al. 1995, Geochim. Cosmochim. Acta, 59, 1411 Croat, T.K. et al. 2003, Geochim. Cosmochim. Acta, 67, 4705 Nichols R.H. et al. 1994, Meteoritics, 29, 510 Nozawa, T. et al. 2007 ApJ, 666, 955

Atomic intercalation to measure adhesion of graphene on graphite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun; Sorescu, Dan C.; Jeon, Seokmin

The interest in mechanical properties of layered and 2D materials has reemerged in light of device concepts that take advantage of flexing, adhesion and friction in such systems. Here we provide an effective measurement of the nanoscale elastic adhesion of a graphene sheet atop highly ordered pyrolytic graphite (HOPG) based on the analysis of atomic intercalates in graphite. Atomic intercalation is carried out using conventional ion sputtering, creating blisters in the top-most layer of the HOPG surface. Scanning tunneling microscopy coupled with image analysis and density functional theory are used to reconstruct the atomic positions and the strain map withinmore » the deformed graphene sheet, as well as to demonstrate subsurface diffusion of the ions creating such blisters. To estimate the adhesion energy we invoke an analytical model originally devised for macroscopic deformations of graphene. This model yields a value of 0.221 ± 0.011 J/m -2 for the adhesion energy of graphite, which is in surprisingly good agreement with reported experimental and theoretical values. This implies that macroscopic mechanical properties of graphene scale down to at least a few nanometers length. The simplicity of our method, compared to the macroscale characterization, enables analysis of elastic mechanical properties in two-dimensional layered materials and provides a unique opportunity to investigate the local variability of mechanical properties on the nanoscale.« less

Atomic intercalation to measure adhesion of graphene on graphite

DOE PAGES

Wang, Jun; Sorescu, Dan C.; Jeon, Seokmin; ...

2016-10-31

The interest in mechanical properties of layered and 2D materials has reemerged in light of device concepts that take advantage of flexing, adhesion and friction in such systems. Here we provide an effective measurement of the nanoscale elastic adhesion of a graphene sheet atop highly ordered pyrolytic graphite (HOPG) based on the analysis of atomic intercalates in graphite. Atomic intercalation is carried out using conventional ion sputtering, creating blisters in the top-most layer of the HOPG surface. Scanning tunneling microscopy coupled with image analysis and density functional theory are used to reconstruct the atomic positions and the strain map withinmore » the deformed graphene sheet, as well as to demonstrate subsurface diffusion of the ions creating such blisters. To estimate the adhesion energy we invoke an analytical model originally devised for macroscopic deformations of graphene. This model yields a value of 0.221 ± 0.011 J/m -2 for the adhesion energy of graphite, which is in surprisingly good agreement with reported experimental and theoretical values. This implies that macroscopic mechanical properties of graphene scale down to at least a few nanometers length. The simplicity of our method, compared to the macroscale characterization, enables analysis of elastic mechanical properties in two-dimensional layered materials and provides a unique opportunity to investigate the local variability of mechanical properties on the nanoscale.« less

Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuschel, Thomas; Keudell, Achim von

2010-05-15

Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with thismore » microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.« less

Fine-Grained Targets for Laser Synthesis of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Smith, Michael W. (Inventor); Park, Cheol (Inventor)

2017-01-01

A mechanically robust, binder-free, inexpensive target for laser synthesis of carbon nanotubes and a method for making same, comprising the steps of mixing prismatic edge natural flake graphite with a metal powder catalyst and pressing the graphite and metal powder mixture into a mold having a desired target shape.

Fine-Grained Targets for Laser Synthesis of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Smith, Michael W. (Inventor); Park, Cheol (Inventor)

2015-01-01

A mechanically robust, binder-free, inexpensive target for laser synthesis of carbon nanotubes and a method for making same, comprising the steps of mixing prismatic edge natural flake graphite with a metal powder catalyst and pressing the graphite and metal powder mixture into a mold having a desired target shape.

Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefacts

NASA Astrophysics Data System (ADS)

Greczynski, G.; Primetzhofer, D.; Hultman, L.

2018-04-01

We report x-ray photoelectron spectroscopy (XPS) core level binding energies (BE's) for the widely-applicable groups IVb-VIb transition metal carbides (TMCs) TiC, VC, CrC, ZrC, NbC, MoC, HfC, TaC, and WC. Thin film samples are grown in the same deposition system, by dc magnetron co-sputtering from graphite and respective elemental metal targets in Ar atmosphere. To remove surface contaminations resulting from exposure to air during sample transfer from the growth chamber into the XPS system, layers are either (i) Ar+ ion-etched or (ii) UHV-annealed in situ prior to XPS analyses. High resolution XPS spectra reveal that even gentle etching affects the shape of core level signals, as well as BE values, which are systematically offset by 0.2-0.5 eV towards lower BE. These destructive effects of Ar+ ion etch become more pronounced with increasing the metal atom mass due to an increasing carbon-to-metal sputter yield ratio. Systematic analysis reveals that for each row in the periodic table (3d, 4d, and 5d) C 1s BE increases from left to right indicative of a decreased charge transfer from TM to C atoms, hence bond weakening. Moreover, C 1s BE decreases linearly with increasing carbide/metal melting point ratio. Spectra reported here, acquired from a consistent set of samples in the same instrument, should serve as a reference for true deconvolution of complex XPS cases, including multinary carbides, nitrides, and carbonitrides.

Pulsed-DC selfsputtering of copper

NASA Astrophysics Data System (ADS)

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

2008-03-01

At standard magnetron sputtering conditions (argon pressure ~0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (~550W/cm2). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%.

Estimating carbon cluster binding energies from measured Cn distributions, n <= 10

NASA Astrophysics Data System (ADS)

Pargellis, A. N.

1990-08-01

Experimental data are presented for the cluster distribution of sputtered negative carbon clusters, C-n, with n≤10. Additionally, clusters have been observed with masses indicating they are CsC-2n, with n≤4. The C-n data are compared with the data obtained by other groups, for neutral and charged clusters, using a variety of sources such as evaporation, sputtering, and laser ablation. The data are used to estimate the cluster binding energies En, using the universal relation, En=(n-1)ΔHn+RTe [ln(Jn/J1)+0.5 ln(n)-α-(ΔSn-ΔS1)/R], derived from basic kinetic and thermodynamic relations. The estimated values agree astonishingly well with values from the literature, varying from published values by at most a few percent. In this equation, Jn is the observed current of n-atom clusters, ΔHn is the heat of vaporization, ΔH1=7.41 eV, and Te ≊0.25 eV (2900 K) is the effective source temperature. The relative change in cluster entropy during sublimation from the solid to vapor phase is approximated to first order by the relation (ΔSn-ΔS1)/R =3.1+0.9(n-2), and is fit to published data for n between 2 and 5 and temperatures between 2000 and 4000 K. The parameter α is empirical, obtained by fitting the data to known binding energies for Cn≤5 clusters. For evaporation sources, α must be zero, but α˜7 when sputtering with Cs+ ions, indicating the sputtered clusters appear to be in thermodynamic equilibrium, but not the atoms. Several possible mechanisms for the formation of clusters during sputtering are examined. One plausible mechanism is that atoms diffuse on the graphite surface to form clusters which are then desorbed by energetic, recoil atoms created in subsequent sputtering events.

Modelling of pulsed electron beam induced graphite ablation: Sublimation versus melting

NASA Astrophysics Data System (ADS)

Ali, Muddassir; Henda, Redhouane

2017-12-01

Pulsed electron beam ablation (PEBA) has recently emerged as a very promising technique for the deposition of thin films with superior properties. Interaction of the pulsed electron beam with the target material is a complex process, which consists of heating, phase transition, and erosion of a small portion from the target surface. Ablation can be significantly affected by the nature of thermal phenomena taking place at the target surface, with subsequent bearing on the properties, stoichiometry and structure of deposited thin films. A two stage, one-dimensional heat conduction model is presented to describe two different thermal phenomena accounting for interaction of a graphite target with a polyenergetic electron beam. In the first instance, the thermal phenomena are comprised of heating, melting and vaporization of the target surface, while in the second instance the thermal phenomena are described in terms of heating and sublimation of the graphite surface. In this work, the electron beam delivers intense electron pulses of ∼100 ns with energies up to 16 keV and an electric current of ∼400 A to a graphite target. The temperature distribution, surface recession velocity, ablated mass per unit area, and ablation depth for the graphite target are numerically simulated by the finite element method for each case. Based on calculation findings and available experimental data, ablation appears to occur mainly in the regime of melting and vaporization from the surface.

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Shinde, D. D.; Misal, J. S.; Kamble, N. M.; Tokas, R. B.; Biswas, A.; Poswal, A. K.; Thakur, S.; Bhattacharyya, D.; Sahoo, N. K.; Sabharwal, S. C.

2010-02-01

Titania-silica (TiO2/SiO2) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, John R.

1996-01-01

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, J.R.

1996-04-30

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

Properties of barium strontium titanate and niobate nanoparticles produced in gas discharge

NASA Astrophysics Data System (ADS)

Plyaka, Pavel; Kazaryan, Mishik; Pavlenko, Anatoly

2018-03-01

Dust particles produced in the gas-discharge plasma by barium-strontium titanate and niobate targets sputtering have been investigated in the paper. Particles shape, size and chemical composition were identified. It have been established by Raman scattering investigation and X-ray structure analysis that a part of the collected dust particles retained original crystal structure of the sputtering target. For electro-physical investigations two discs were formed by pressuring from produced particles, and electrodes were deposited on disc flat surface. Capacitance and dielectric loss temperature dependences measurement resulted in the frequency range proving the ferroelectric properties of assembled nanoparticles, similar to the sputtered material.

Preliminary Results of IS Plasma Focus as a Breeder of Short-Lived Radioisotopes 12C(d,n)13N

NASA Astrophysics Data System (ADS)

Sadat Kiai, S. M.; Elahi, M.; Adlparvar, S.; Shahhoseini, E.; Sheibani, S.; Ranjber akivaj, H.; Alhooie, S.; Safarien, A.; Farhangi, S.; Aghaei, N.; Amini, S.; Khalaj, M. M.; Zirak, A. R.; Dabirzadeh, A. A.; Soleimani, J.; Torkzadeh, F.; Mousazadeh, M. M.; Moradi, K.; Abdollahzadeh, M.; Talaei, A.; Zaeem, A. A.; Moslehi, A.; Kashani, A.; Babazadeh, A. R.; Bagiyan, F.; Ardestani, M.; Roozbahani, A.; Pourbeigi, H.; Tajik Ahmadi, H.; Ahmadifaghih, M. A.; Mahlooji, M. S.; Mortazavi, B. N.; Zahedi, F.

2011-04-01

Modified IS (Iranian Sun) plasma focus (10 kJ,15 kV, 94 μF, 0.1 Hz) has been used to produce the short-lived radioisotope 13N (half-life of 9.97 min) through 12C(d,n)13N nuclear reaction. The filling gas was 1.5-3 torr of hydrogen (60%) deuterium (40%) mixture. The target was solid nuclear grade graphite with 5 mm thick, 9 cm width and 13 in length. The activations of the exogenous target on average of 20 shots (only one-third acceptable) through 10-13 kV produced the 511 keV gamma rays. Another peak found at the 570 keV gamma of which both was measured by a NaI portable gamma spectrometer calibrated by a 137Cs 0.25 μCi sealed reference source with its single line at 661.65 keV and 22Na 0.1 μCi at 511 keV. To measure the gamma rays, the graphite target converts to three different phases; solid graphite, powder graphite, and powder graphite in water solution. The later phase approximately has a doubled activity with respect to the solid graphite target up to 0.5 μCi of 511 keV and 1.1 μCi of 570 keV gamma lines were produced. This increment in activity was perhaps due to structural transformation of graphite powder to nano-particles characteristic in liquid water.

The effect of graphitic target density on carbon nanotube synthesis by pulsed laser ablation method

NASA Astrophysics Data System (ADS)

Kazeimzadeh, Fatemeh; Malekfar, Rasoul; Houshiar, Mahboubeh

2018-01-01

Carbon nanotube (CNT) was synthesized by pulsed laser ablation (PLA) of a graphitic target in vacuum chamber filled by argon gas. The effect of different condition of target preparation on the amount and quality of carbon nanotube generation was investigated. The graphite powder with 2 at% micrometer nickel (Ni) powder was mixed and packed in to a mold using a hydraulic press device at a pressure of 1000 kg/cm3. The obtained pellet which contained the mixture powder provided the carbon source for CNTs formation in PLA method. Two pellets with the pressure time of 15 and 200 min was prepared. It has been shown that the time which graphitic target is under pressure is an effective parameter that can increase the amount of produced CNTs. Field emission scanning electron microscopy (FESEM) images show that if the density of graphitic target is increased by raising up the pressure time, CNTs can grow even under the condition in which usually no nanotube can be formed. It can be due to the elimination of the distances between the graphite and catalyst grains that causes the catalysis performance improvement. The experiment was performed for nanometer cobalt ferrite (CoFe2O4) together with Ni catalyst particles too. The diameter of synthesized CNPs was larger in the case of pure nickel that is related to the size of catalysts. Moreover, it was also observed that the production rate of the nanotubes increased for high density targets. This shows that the results are independent of the type of catalyst.

Studies on RF sputtered (WO3)1-x (V2O5)x thin films for smart window applications

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Sivakumar, R.; Perumal, P.; Sanjeeviraja, C.

2016-05-01

V2O5 doped WO3 targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO3)1-x (V2O5)x were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Installation of hybrid ion source on the 1-MV LLNL BioAMS spectrometer

PubMed Central

Ognibene, T. J.; Salazar, G. A.

2012-01-01

A second ion source was recently installed onto the LLNL 1-MV AMS spectrometer, which is dedicated to the quantification of 14C and 3H within biochemical samples. This source is unique among the other LLNL cesium sputter ion sources in that it can ionize both gaseous and solid samples. Also, the injection beam line has been designed to directly measure 14C/12C isotope ratios without the need for electrostatic bouncing. Preliminary tests show that this source can ionize transient CO2 gas pulses containing less than 1 ug carbon with approximately 1.5% efficiency. We demonstrate that the measured 14C/12C isotope ratio is largely unaffected by small drifts in the argon stripper gas density. We also determine that a tandem accelerating voltage of 670 kV enables the highest 14C transmission through the system. Finally, we describe a series of performance tests using solid graphite targets spanning nearly 3 orders in magnitude dynamic range and compare the results to our other ion source. PMID:23467295

On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

NASA Astrophysics Data System (ADS)

Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

2014-04-01

The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps: process gas sputtering, gas-sustained SS, self-sustained SS and SS runaway. At the highest voltage, 1000 V, the discharge is very close to, but does not go into, the SS runaway mode. This absence of runaway is proposed to be connected to an unexpected finding: that twice ionized ions of the target species play almost no role in this discharge, not even at the highest powers. This reduces ionization by secondary-emitted energetic electrons almost to zero in the highest power range of the discharge.

Negative pressure and spallation in graphite targets under nano- and picosecond laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belikov, R S; Khishchenko, K V; Krasyuk, I K

We present the results of experiments on the spallation phenomena in graphite targets under shock-wave nano- and picosecond irradiation, which have been performed on Kamerton-T (GPI, Moscow, Russia) and PHELIX (GSI, Darmstadt, Germany) laser facilities. In the range of the strain rates of 10{sup 6} – 10{sup 7} s{sup -1}, the data on the dynamic mechanical strength of the material at rapure (spallation) have been for the first time obtained. With a maximal strain rate of 1.4 × 10{sup 7} s{sup -1}, the spall strength of 2.1 GPa is obtained, which constitutes 64% of the theoretical ultimate tensile strength ofmore » graphite. The effect of spallation is observed not only on the rear side of the target, but also on its irradiated (front) surface. With the use of optical and scanning electron microscopes, the morphology of the front and rear surfaces of the targets is studied. By means of Raman scattering of light, the graphite structure both on the target front surface under laser exposure and on its rear side in the spall zone is investigated. A comparison of the dynamic strength of graphite and synthetic diamond is performed. (extreme light fields and their applications)« less

MgAl{sub 2}O{sub 4}(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmoubarik, Mohamed; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu

We developed a fabrication process of an epitaxial MgAl{sub 2}O{sub 4} barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl{sub 2}O{sub 4} spinel sintered target. Annealing the sputter-deposited MgAl{sub 2}O{sub 4} layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl{sub 2}O{sub 4}/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative methodmore » for the realization of high performance MTJs with a spinel-based tunnel barrier.« less

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

NASA Astrophysics Data System (ADS)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

Heavy particle transport in sputtering systems

NASA Astrophysics Data System (ADS)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Collision-spike sputtering of Au nanoparticles

DOE PAGES

Sandoval, Luis; Urbassek, Herbert M.

2015-08-06

Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; themore » remainder is transported away by the transmitted projectile and the ejecta. As a result, the sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering.« less

Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, Fred W; Harris, Peter R; Taylor, C. N.

2011-01-01

We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have highermore » physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.« less

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

DOE PAGES

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

2017-02-01

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grainsmore » and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.« less

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se; Sterner, Jan; Platzer-Björkman, Charlotte

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device.more » Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.« less

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

On Both Spatial And Velocity Distribution Of Sputtered Particles In Magnetron Discharge

NASA Astrophysics Data System (ADS)

Vitelaru, C.; Pohoata, V.; Tiron, V.; Costin, C.; Popa, G.

2012-12-01

The kinetics of the sputtered atoms from the metallic target as well as the time-space distribution of the argon metastable atoms have been investigated for DC and high power pulse magnetron discharge by means of Tunable Diode - Laser Absorption Spectroscopy (TD-LAS) and Tunable Diode - Laser Induced Fluorescence (TD-LIF). The discharge was operated in argon (5-30 mTorr) with two different targets, tungsten and aluminum, for pulses of 1 to 20 μs, at frequencies of 0.2 to 1 kHz. Peak current intensity of ~100 A has been attained at cathode peak voltage of ~1 kV. The mean velocity distribution functions and particle fluxes of the sputtered metal atoms, in parallel and perpendicular direction to the target, have been obtained and compared for DC and pulse mode.

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

NASA Astrophysics Data System (ADS)

Tucker, Mark D.; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna

2014-04-01

Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A "fullerene-like" (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

NASA Astrophysics Data System (ADS)

Lackner, Peter; Choi, Joong Il Jake; Diebold, Ulrike; Schmid, Michael

2017-10-01

A sputter deposition source for the use in ultrahigh vacuum (UHV) is described, and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas and the Ar+ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar+ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for the deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of 9 ×1 0-6 mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of ≈1 ML in 250 s was achieved at the substrate (at a distance of ≈50 mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar+ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.

1995-01-01

A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

Production of Zr-89 using sputtered yttrium coin targets 89Zr using sputtered yttrium coin targets.

PubMed

Queern, Stacy Lee; Aweda, Tolulope Aramide; Massicano, Adriana Vidal Fernandes; Clanton, Nicholas Ashby; El Sayed, Retta; Sader, Jayden Andrew; Zyuzin, Alexander; Lapi, Suzanne Elizabeth

2017-07-01

An increasing interest in zirconium-89 ( 89 Zr) can be attributed to the isotope's half-life which is compatible with antibody imaging using positron emission tomography (PET). The goal of this work was to develop an efficient means of production for 89 Zr that provides this isotope with high radionuclidic purity and specific activity. We investigated the irradiation of yttrium sputtered niobium coins and compared the yields and separation efficiency to solid yttrium coins. The sputtered coins were irradiated with an incident beam energy of 17.5MeV or 17.8MeV providing a degraded transmitted energy through an aluminum degrader of 12.5MeV or 12.8MeV, respectively, with various currents to determine optimal cyclotron conditions for 89 Zr production. Dissolution of the solid yttrium coin took 2h with 50mL of 2M HCl and dissolution of the sputtered coin took 15-30min with 4mL of 2M HCl. During the separation of 89 Zr from the solid yttrium coins, 77.9 ± 11.2% of the activity was eluted off in an average of 7.3mL of 1M oxalic acid whereas for the sputtered coins, 91 ± 6% was eluted off in an average of 1.2mL of 1M oxalic acid with 100% radionuclidic purity. The effective specific activity determined via DFO-SCN titration from the sputtered coins was 108±7mCi/μmol as compared to 20.3mCi/μmol for the solid yttrium coin production. ICP-MS analysis of the yttrium coin and the sputtered coins showed 99.99% yttrium removed with 178μg of yttrium in the final solution and 99.93-100% of yttrium removed with remaining range of 0-42μg of yttrium in the final solution, respectively. The specific activity calculated for the solid coin and 3 different sputtered coins using the concentration of Zr found via ICP-MS was 140±2mCi/μmol, 300±30mCi/μmol, 410±60mCi/μmol and 1719±5mCi/μmol, respectively. Labeling yields of the 89 Zr produced via sputtered targets for 89 Zr- DFO-trastuzumab were >98%. Overall, these results show the irradiation of yttrium sputtered niobium coins is a highly effective means for the production of 89 Zr. Copyright © 2017 Elsevier Inc. All rights reserved.

Wear Testing of the HERMeS Thruster

NASA Technical Reports Server (NTRS)

Williams, George J., Jr.; Gilland, James H.; Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Ahern, Drew M.; Yim, John; Herman, Daniel A.; Hofer, Richard R.; Sekerak, Michael

2016-01-01

The Hall-Effect Rocket with Magnetic Shielding (HERMeS) thruster is being developed and tested at NASA GRC and NASA JPL through support of the Space Technology Mission Directorate (STMD) as primary propulsion for the Asteroid Redirect Robotic Mission (ARRM). This thruster is advancing the state-of-the-art of Hall-effect thrusters and is intended to serve as a precursor to higher power systems for human interplanetary exploration. A 2000-hour wear test has been initiated at NASA GRC with the HERMeS Technology Demonstration Unit One and three of four test segments have been completed totaling 728 h of operation. This is the first test of a NASA-designed magnetically shielded thruster to extend beyond 300 hr of continuous operation. Trends in performance, component wear, thermal design, plume properties, and back-sputtered deposition are discussed for two wear-test segments of 246 h and 360 h. The first incorporated graphite pole covers in an electrical configuration where cathode was electrically connected to thruster body. The second utilized traditional alumina pole covers with the thruster body floating. It was shown that the magnetic shielding in both configurations completely eliminated erosion of the boron nitride discharge channel but resulted in erosion of the inner pole cover. The volumetric erosion rate of the graphite pole covers was roughly 2/3 that of the alumina pole covers and the thruster exhibited slightly better performance. Buildup of back-sputtered carbon on the BN channel at a rate of roughly 1.5 µm/kh is shown to have negligible impact on the performance.

Low-Energy Sputtering Research

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

Proton irradiated graphite grades for a long baseline neutrino facility experiment

NASA Astrophysics Data System (ADS)

Simos, N.; Nocera, P.; Zhong, Z.; Zwaska, R.; Mokhov, N.; Misek, J.; Ammigan, K.; Hurh, P.; Kotsina, Z.

2017-07-01

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140-180 MeV, to peak fluence of ˜6.1 ×1020 p /cm2 and irradiation temperatures between 120 - 200 °C . The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young's modulus. The proton fluence level of ˜1020 cm-2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ˜5 ×1020 cm-2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.

Proton irradiated graphite grades for a long baseline neutrino facility experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simos, N.; Nocera, P.; Zhong, Z.

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10 20 p/cm 2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use asmore » a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10 20 cm -2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ~5×10 20 cm -2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.« less

Proton irradiated graphite grades for a long baseline neutrino facility experiment

DOE PAGES

Simos, N.; Nocera, P.; Zhong, Z.; ...

2017-07-24

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10 20 p/cm 2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use asmore » a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10 20 cm -2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ~5×10 20 cm -2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.« less

Studies on RF sputtered (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} thin films for smart window applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meenakshi, M.; Perumal, P.; Sivakumar, R.

2016-05-23

V{sub 2}O{sub 5} doped WO{sub 3} targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

NASA Astrophysics Data System (ADS)

He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

1998-02-01

Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

Sputtering of cobalt and chromium by argon and xenon ions near the threshold energy region

NASA Technical Reports Server (NTRS)

Handoo, A. K.; Ray, P. K.

1993-01-01

Sputtering yields of cobalt and chromium by argon and xenon ions with energies below 50 eV are reported. The targets were electroplated on copper substrates. Measurable sputtering yields were obtained from cobalt with ion energies as low as 10 eV. The ion beams were produced by an ion gun. A radioactive tracer technique was used for the quantitative measurement of the sputtering yield. Co-57 and Cr-51 were used as tracers. The yield-energy curves are observed to be concave, which brings into question the practice of finding threshold energies by linear extrapolation.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

NASA Astrophysics Data System (ADS)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

A thermalized ion explosion model for high energy sputtering and track registration

NASA Technical Reports Server (NTRS)

Seiberling, L. E.; Griffith, J. E.; Tombrello, T. A.

1980-01-01

A velocity spectrum of neutral sputtered particles as well as a low resolution mass spectrum of sputtered molecular ions was measured for 4.74 MeV F-19(+2) incident of UF4. The velocity spectrum is dramatically different from spectra taken with low energy (keV) bombarding ions, and is shown to be consistent with a hot plasma of atoms in thermal equilibrium inside the target. A thermalized ion explosion model is proposed for high energy sputtering which is expected to describe track formation in dielectric materials. The model is shown to be consistent with the observed total sputtering yield and the dependence of the yield on the primary ionization rate of the incident ion.

Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

NASA Astrophysics Data System (ADS)

Jeong, Jin-A.; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

2010-11-01

We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/squ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

Hydrocarbon deposition in gaps of tungsten and graphite tiles in Experimental Advanced Superconducting Tokamak edge plasma parameters

NASA Astrophysics Data System (ADS)

Xu, Qian; Yang, Zhongshi; Luo, Guang-Nan

2015-09-01

The three-dimensional (3D) Monte Carlo code PIC-EDDY has been utilized to investigate the mechanism of hydrocarbon deposition in gaps of tungsten tiles in the Experimental Advanced Superconducting Tokamak (EAST), where the sheath potential is calculated by the 2D in space and 3D in velocity particle-in-cell method. The calculated results for graphite tiles using the same method are also presented for comparison. Calculation results show that the amount of carbon deposited in the gaps of carbon tiles is three times larger than that in the gaps of tungsten tiles when the carbon particles from re-erosion on the top surface of monoblocks are taken into account. However, the deposition amount is found to be larger in the gaps of tungsten tiles at the same CH4 flux. When chemical sputtering becomes significant as carbon coverage on tungsten increases with exposure time, the deposition inside the gaps of tungsten tiles would be considerable.

Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

NASA Astrophysics Data System (ADS)

Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

2016-03-01

Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

Electronic sputtering of LiF, CaF2, LaF3 and UF4 with 197 MeV Au ions. Is the stoichiometry of atom emission preserved?

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Muller, D.; Trautmann, C.

2017-09-01

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. Four different fluoride targets, LiF, CaF2, LaF3 and UF4 were irradiated in the electronic energy loss regime using 197 MeV Au ions. The angular distribution of particles sputtered from the surface of freshly cleaved LiF and CaF2 single crystals is composed of a broad cosine distribution superimposed by a jet-like peak that appears perpendicular to the surface independent of the angle of beam incidence. For LiF, the particle emission in the entire angular distribution (jet plus broad cosine component) is stoichiometric, whereas for CaF2 the ratio of the sputtered F to Ca particles is at large angles by a factor of two smaller than the stoichiometry of the crystal. For single crystalline LaF3 no jet component is observed and the angular distribution is non-stoichiometric with the number of sputtered F particles being slightly larger than the number of sputtered La particles. In the case of UF4, the target was polycrystalline and had a much rougher surface compared to cleaved crystals. This destroys the appearance of a possible jet component leading to a broad angular distribution. The ratio of sputtered U atoms compared to F atoms is in the order of 1-2, i.e. the number of collected particles on the catcher is also non-stoichiometric. Such unlike behavior of particles sputtered from different fluoride crystals creates new questions.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

NASA Astrophysics Data System (ADS)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Growth of oxide exchange bias layers

DOEpatents

Chaiken, Alison; Michel, Richard P.

1998-01-01

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, D.M.; McKernan, M.A.

1995-02-28

A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

Growth of oxide exchange bias layers

DOEpatents

Chaiken, A.; Michel, R.P.

1998-07-21

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

Concept for a beryllium divertor with in-situ plasma spray surface regeneration

NASA Astrophysics Data System (ADS)

Smith, M. F.; Watson, R. D.; McGrath, R. T.; Croessmann, C. D.; Whitley, J. B.; Causey, R. A.

1990-04-01

Two serious problems with the use of graphite tiles on the ITER divertor are the limited lifetime due to erosion and the difficulty of replacing broken tiles inside the machine. Beryllium is proposed as an alternative low-Z armor material because the plasma spray process can be used to make in-situ repairs of eroded or damaged surfaces. Recent advances in plasma spray technology have produced beryllium coatings of 98% density with a 95% deposition efficiency and strong adhesion to the substrate. With existing technology, the entire active region of the ITER divertor surface could be coated with 2 mm of beryllium in less than 15 h using four small plasma spray guns. Beryllium also has other potential advantages over graphite, e.g., efficient gettering of oxygen, ten times less tritium inventory, reduced problems of transient fueling from D/T exchange and release, no runaway erosion cascades from self-sputtering, better adhesion of redeposited material, as well as higher strength, ductility, and fracture toughness than graphite. A 2-D finite element stress analysis was performed on a 3 mm thick Be tile brazed to an OFHC soft-copper saddle block, which was brazed to a high-strength copper tube. Peak stresses remained 50% below the ultimate strength for both brazing and in-service thermal stresses.

Transmission sputtering under diatomic molecule bombardment. Model calculations

NASA Astrophysics Data System (ADS)

Bitensky, I. S.

1996-04-01

Transmission sputtering means that emission of secondary particles is studied from the downstream side of a bombarded foil. Nonlinear effects in sputtering manifest themselves as a deviation of sputtering yield under molecular ion bombardment from the sum of the yields induced by the constituents at the same velocity. In the reflection geometry the overlap of the spike regions reaches maximum, while in transmission the degree of overlap depends on the projectile and on the foil thickness. It has been shown that the transmission sputtering yield can be described by a function of a scaling parameter determined by beam-foil characteristics and a mechanism of nonlinear sputtering. Calculations of the transmission yield have been made in the thermal spike and shock wave models. The results of calculations are compared with experimental data on phenylalanine molecular ion desorption from organic targets induced by Au + and Au 2+ impact. Suggestions for further experimental study are made.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Huge increase in gas phase nanoparticle generation by pulsed direct current sputtering in a reactive gas admixture

NASA Astrophysics Data System (ADS)

Polonskyi, Oleksandr; Peter, Tilo; Mohammad Ahadi, Amir; Hinz, Alexander; Strunskus, Thomas; Zaporojtchenko, Vladimir; Biederman, Hynek; Faupel, Franz

2013-07-01

Using reactive DC sputtering in a gas aggregation cluster source, we show that pulsed discharge gives rise to a huge increase in deposition rate of nanoparticles by more than one order of magnitude compared to continuous operation. We suggest that this effect is caused by an equilibrium between slight target oxidation (during "time-off") and subsequent sputtering of Ti oxides (sub-oxides) at "time-on" with high power impulse.

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

NASA Astrophysics Data System (ADS)

Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Rei; Suda, Yoshiaki

2017-06-01

Tris(8-hydroxyquinolinato)aluminum (Alq3) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

Sputter deposition of MgxAlyOz thin films in a dual-magnetron device: a multi-species Monte Carlo model

NASA Astrophysics Data System (ADS)

Yusupov, M.; Saraiva, M.; Depla, D.; Bogaerts, A.

2012-07-01

A multi-species Monte Carlo (MC) model, combined with an analytical surface model, has been developed in order to investigate the general plasma processes occurring during the sputter deposition of complex oxide films in a dual-magnetron sputter deposition system. The important plasma species, such as electrons, Ar+ ions, fast Ar atoms and sputtered metal atoms (i.e. Mg and Al atoms) are described with the so-called multi-species MC model, whereas the deposition of MgxAlyOz films is treated by an analytical surface model. Target-substrate distances for both magnetrons in the dual-magnetron setup are varied for the purpose of growing stoichiometric complex oxide thin films. The metal atoms are sputtered from pure metallic targets, whereas the oxygen flux is only directed toward the substrate and is high enough to obtain fully oxidized thin films but low enough to avoid target poisoning. The calculations correspond to typical experimental conditions applied to grow these complex oxide films. In this paper, some calculation results are shown, such as the densities of various plasma species, their fluxes toward the targets and substrate, the deposition rates, as well as the film stoichiometry. Moreover, some results of the combined model are compared with experimental observations. Note that this is the first complete model, which can be applied for large and complicated magnetron reactor geometries, such as dual-magnetron configurations. With this model, we are able to describe all important plasma species as well as the deposition process. It can also be used to predict film stoichiometries of complex oxide films on the substrate.

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

NASA Astrophysics Data System (ADS)

Vašina, P; Hytková, T; Eliáš, M

2009-05-01

The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

Surface acoustic wave/silicon monolithic sensor/processor

NASA Technical Reports Server (NTRS)

Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

1983-01-01

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System

PubMed Central

Liu, Fang-Cheng; Li, Jyun-Yong; Chen, Tai-Hong; Chang, Chun-How; Lee, Ching-Ting; Hsiao, Wei-Hua; Liu, Day-Shan

2017-01-01

Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. PMID:28773159

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Sputtering Erosion in the Ion Thruster

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.; Mantenieks, Maris A. (Technical Monitor)

2000-01-01

During the first phase of this research, the sputtering yields of molybdenum by low energy (100 eV and higher) xenon ions were measured by using the methods of secondary neutral mass spectrometry (SNMS) and Rutherford backscattering spectrometry (RBS). However, the measured sputtering yields were found to be far too low to explain the sputtering erosions observed in the long-duration tests of ion thrusters. The only difference between the sputtering yield measurement experiments and the ion thruster tests was that the later are conducted at high ion fluences. Hence, a study was initiated to investigate if any linkage exists between high ion fluence and an enhanced sputtering yield. The objective of this research is to gain an understanding of the causes of the discrepancies between the sputtering rates of molybdenum grids in an ion thruster and those measured from our experiments. We are developing a molecular dynamics simulation technique for studying low-energy xenon ion interactions with molybdenum. It is difficult to determine collision sequences analytically for primary ions below the 200 eV energy range where the ion energy is too low to be able to employ a random cascade model with confidence and it is too high to have to consider only single collision at or near the surface. At these low energies, the range of primary ions is about 1 to 2 nm from the surface and it takes less than 4 collisions on the average to get an ion to degrade to such an energy that it can no longer migrate. The fine details of atomic motion during the sputtering process are revealed through computer simulation schemes. By using an appropriate interatomic potential, the positions and velocities of the incident ion together with a sufficient number of target atoms are determined in small time steps. Hence, it allows one to study the evolution of damages in the target and its effect on the sputtering yield. We are at the preliminary stages of setting up the simulation program.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersson, Joakim; Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Wear Behavior of Low-Cost, Lightweight TiC/Ti-6Al-4V Composite Under Fretting: Effectiveness of Solid-Film Lubricant Counterparts

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Street, Kenneth W., Jr.; Sanders, Jeffrey H.; Hager, Carl H., Jr.; Zabinski, Jeffrey S.; VanderWal, Randall L.; Andrews, Rodney; Lerch, Bradley A.

2007-01-01

The wear behavior of low-cost, lightweight 10-wt% TiC-particulate-reinforced Ti-6Al-4V matrix composite (TiC/Ti- 6Al-4V) was examined under fretting at 296, 423, and 523 K in air. Bare 10-wt% TiC/Ti-6Al-4V hemispherical pins were used in contact with dispersed multiwalled carbon nanotubes (MWNTs), magnetron-sputtered diamondlike carbon/chromium (DLC/Cr), magnetron-sputtered graphite-like carbon/chromium (GLC/Cr), and magnetron-sputtered molybdenum disulphide/titanium (MoS2/Ti) deposited on Ti-6Al-4V, Ti-48Al-2Cr-2Nb, and nickel-based superalloy 718. When TiC/Ti-6Al-4V was brought into contact with bare Ti-6Al-4V, bare Ti-48Al-2Cr-2Nb, and bare nickel-based superalloy 718, strong adhesion, severe galling, and severe wear occurred. However, when TiC/Ti-6Al-4V was brought into contact with MWNT, DLC/Cr, GLC/Cr, and MoS2/Ti coatings, no galling occurred in the contact, and relatively minor wear was observed regardless of the coating. All the solid-film lubricants were effective from 296 to 523 K, but the effectiveness of the MWNT, DLC/Cr, GLC/Cr, and MoS2/Ti coatings decreased as temperature increased.

Impact of electrode preparation on the bending of asymmetric planar electro-active polymer microstructures

NASA Astrophysics Data System (ADS)

Weiss, Florian M.; Töpper, Tino; Osmani, Bekim; Winterhalter, Carla; Müller, Bert

2014-03-01

Compliant electrodes of microstructures have been a research topic for many years because of the increasing interest in consumer electronics, robotics, and medical applications. This interest includes electrically activated polymers (EAP), mainly applied in robotics, lens systems, haptics and foreseen in a variety of medical devices. Here, the electrodes consist of metals such as gold, graphite, conductive polymers or certain composites. The common metal electrodes have been magnetron sputtered, thermally evaporated or prepared using ion implantation. In order to compare the functionality of planar metal electrodes in EAP microstructures, we have investigated the mechanical properties of magnetron sputtered and thermally evaporated electrodes taking advantage of cantilever bending of the asymmetric, rectangular microstructures. We demonstrate that the deflection of the sputtered electrodes is up to 39 % larger than that of thermally evaporated nanometer-thin film on a single silicone film. This difference has even more impact on nanometer-thin, multi-stack, low-voltage EAP actuators. The stiffening effect of many metallic electrode layers is expected to be one of the greatest drawbacks in the multi-stack approaches, which will be even more pronounced if the elastomer layer thickness will be in the sub-micrometer range. Additionally, an improvement in voltage and strain resolution is presented, which is as low as 2 V or 5 × 10-5 above 10 V applied.

Optical monitoring of ion beam Y-Ba-Cu-O sputtering

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1990-11-01

The emission spectra resulting from ion beam sputtering a Y-Ba-Cu-O target were observed as a function of beam voltage and beam current. The spectra were relatively clean with several peaks readily attributed to each of Y, Ba, and Ar. Monitoring of copper and oxygen was more difficult with a single CuO peak and one O peak evident. The intensities of the cation peaks were linear with respect to beam voltage above 400 V. Since target current was found not to be directly proportional to beam current, target power was defined as the product of beam voltage and target current. The response of cation peak height to changes in target power was linear and similar for variations of either beam voltage or target current.

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be unsuitable as a barrier layer for the growth of rm YBa _2Cu_3O_{7-x}, on Si since Ba reacted with the si after migrating through the SrTiO_3 layer. For sapphire, no textured growth of SrTiO_3 was observed but it was found to be a suitable barrier layer since it prevented any interaction between Y-Ba-Cu-O films and sapphire substrates.

Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

DTIC Science & Technology

2015-03-01

AFRL-RX-WP-JA-2015-0185 MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (POSTPRINT) A. N. Reed...COVERED (From – To) 29 January 2013 – 16 February 2015 4. TITLE AND SUBTITLE MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON...ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

NASA Astrophysics Data System (ADS)

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

2016-06-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

In-situ sputtering apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.

A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and amore » cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.« less

Single-crystal and polycrystalline diamond erosion studies in Pilot-PSI

NASA Astrophysics Data System (ADS)

Kogut, D.; Aussems, D.; Ning, N.; Bystrov, K.; Gicquel, A.; Achard, J.; Brinza, O.; Addab, Y.; Martin, C.; Pardanaud, C.; Khrapak, S.; Cartry, G.

2018-03-01

Diamond is a promising candidate for enhancing the negative-ion surface production in the ion sources for neutral injection in fusion reactors; hence evaluation of its reactivity towards hydrogen plasma is of high importance. Single crystal and polycrystalline diamond samples were exposed in Pilot-PSI with the D+ flux of (4‒7)·1024 m-2s-1 and the impact energy of 7-9 eV per deuteron at different surface temperatures; under such conditions physical sputtering is negligible, however chemical sputtering is important. Net chemical sputtering yield Y = 9.7·10-3 at/ion at 800 °C was precisely measured ex-situ using a protective platinum mask (5 × 10 × 2 μm) deposited beforehand on a single crystal followed by the post-mortem analysis using Transmission Electron Microscopy (TEM). The structural properties of the exposed diamond surface were analyzed by Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Gross chemical sputtering yields were determined in-situ by means of optical emission spectroscopy of the molecular CH A-X band for several surface temperatures. A bell-shaped dependence of the erosion yield versus temperature between 400 °C and 1200 °C was observed, with a maximum yield of ∼1.5·10-2 at/ion attained at 900 °C. The yields obtained for diamond are relatively high (0.5-1.5)·10-2 at/ion, comparable with those of graphite. XPS analysis shows amorphization of diamond surface within 1 nm depth, in a good agreement with molecular dynamics (MD) simulation. MD was also applied to study the hydrogen impact energy threshold for erosion of [100] diamond surface at different temperatures.

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE PAGES

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann; ...

2018-05-11

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationshipmore » between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Furthermore, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Correlation of process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target

NASA Astrophysics Data System (ADS)

Bundesmann, Carsten; Lautenschläge, Thomas; Spemann, Daniel; Finzel, Annemarie; Mensing, Michael; Frost, Frank

2017-10-01

The correlation between process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target was investigated. TiO2 films were grown under systematic variation of ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, polar emission angle) and characterized with respect to film thickness, growth rate, structural properties, surface topography, composition, optical properties, and mass density. Systematic variations of film properties with the scattering geometry, namely the scattering angle, have been revealed. There are also considerable differences in film properties when changing the process gas from Ar to Xe. Similar systematics were reported for TiO2 films grown by reactive ion beam sputter deposition from a metal target [C. Bundesmann et al., Appl. Surf. Sci. 421, 331 (2017)]. However, there are some deviations from the previously reported data, for instance, in growth rate, mass density and optical properties.

Magnetron sputtered boron films for increasing hardness of a metal surface

DOEpatents

Makowiecki, Daniel M [Livermore, CA; Jankowski, Alan F [Livermore, CA

2003-05-27

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2 plasma

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Ries, Stefan; Bibinov, Nikita; Awakowicz, Peter; Mráz, Stanislav; Schneider, Jochen M.; Mussenbrock, Thomas

2018-05-01

Direct current magnetron sputtering of Al by Ar and Ar/N2 low pressure plasmas was characterized by experimental and theoretical means in a unified consideration. Experimentally, the plasmas were analyzed by optical emission spectroscopy, while the film deposition rate was determined by weight measurements and laser optical microscopy, and the film composition by energy dispersive x-ray spectroscopy. Theoretically, a global particle and power balance model was used to estimate the electron temperature T e and the electron density n e of the plasma at constant discharge power. In addition, the sputtering process and the transport of the sputtered atoms were described using Monte Carlo models—TRIDYN and dsmcFoam, respectively. Initially, the non-reactive situation is characterized based on deposition experiment results, which are in agreement with predictions from simulations. Subsequently, a similar study is presented for the reactive case. The influence of the N2 addition is found to be twofold, in terms of (i) the target and substrate surface conditions (e.g., sputtering, secondary electron emission, particle sticking) and (ii) the volumetric changes of the plasma density n e governing the ion flux to the surfaces (e.g., due to additional energy conversion channels). It is shown that a combined experimental/simulation approach reveals a physically coherent and, in particular, quantitative understanding of the properties (e.g., electron density and temperature, target surface nitrogen content, sputtered Al density, deposited mass) involved in the deposition process.

Reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

2012-10-01

Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

Post Irradiation Examination Results of the NT-02 Graphite Fins NUMI Target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ammigan, K.; Hurh, P.; Sidorov, V.

2017-02-10

The NT-02 neutrino target in the NuMI beamline at Fermilab is a 95 cm long target made up of segmented graphite fins. It is the longest running NuMI target, which operated with a 120 GeV proton beam with maximum power of 340 kW, and saw an integrated total proton on target of 6.1 1020. Over the last half of its life, gradual degradation of neutrino yield was observed until the target was replaced. The probable causes for the target performance degradation are attributed to radiation damage, possibly including cracking caused by reduction in thermal shock resistance, as well as potentialmore » localized oxidation in the heated region of the target. Understanding the long-termstructural response of target materials exposed to proton irradiation is critical as future proton accelerator sources are becoming increasingly more powerful. As a result, an autopsy of the target was carried out to facilitate post-irradiation examination of selected graphite fins. Advanced microstructural imaging and surface elemental analysis techniques were used to characterize the condition of the fins in an effort to identify degradation mechanisms, and the relevant findings are presented in this paper.« less

Ion beam and plasma methods of producing diamondlike carbon films

NASA Technical Reports Server (NTRS)

Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

1988-01-01

A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, Mark D., E-mail: martu@ifm.liu.se; Broitman, Esteban; Näslund, Lars-Åke

Carbon and carbon nitride films (CN{sub x}, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CN{sub x} films, was observed in films deposited at 175 °C and above, with N{sub 2} pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradualmore » transition from majority sp{sup 3}-hybridized films to sp{sup 2} films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CN{sub x} films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.« less

Simulation of Carbon Production from Material Surfaces in Fusion Devices

NASA Astrophysics Data System (ADS)

Marian, J.; Verboncoeur, J.

2005-10-01

Impurity production at carbon surfaces by plasma bombardment is a key issue for fusion devices as modest amounts can lead to excessive radiative power loss and/or hydrogenic D-T fuel dilution. Here results of molecular dynamics (MD) simulations of physical and chemical sputtering of hydrocarbons are presented for models of graphite and amorphous carbon, the latter formed by continuous D-T impingement in conditions that mimic fusion devices. The results represent more extensive simulations than we reported last year, including incident energies in the 30-300 eV range for a variety of incident angles that yield a number of different hydrocarbon molecules. The calculated low-energy yields clarify the uncertainty in the complex chemical sputtering rate since chemical bonding and hard-core repulsion are both included in the interatomic potential. Also modeled is hydrocarbon break-up by electron-impact collisions and transport near the surface. Finally, edge transport simulations illustrate the sensitivity of the edge plasma properties arising from moderate changes in the carbon content. The models will provide the impurity background for the TEMPEST kinetic edge code.

The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

NASA Astrophysics Data System (ADS)

Tidrow, Steven Clay

Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films for systematic investigations into the nature of these materials.

An exploratory study of recycled sputtering and CsF2- current enhancement for AMS

NASA Astrophysics Data System (ADS)

Zhao, X.-L.; Charles, C. R. J.; Cornett, R. J.; Kieser, W. E.; MacDonald, C.; Kazi, Z.; St-Jean, N.

2016-01-01

The analysis of 135Cs/Cs ratios at levels below 10-12 by accelerator mass spectrometry (AMS) would preferably use commonly available negative ion injection systems. The sputter ion sources in these injectors should ideally produce currents of Cs- or Cs-containing molecular anions approaching μA levels from targets containing mg quantities of Cs. However, since Cs is the most electro-positive stable element in nature with a low electron affinity, the generation of large negative atomic, or molecular beams containing Cs, has been very challenging. In addition, the reduction of the interferences from the 135Ba isobar and the primary 133Cs+ beam used for sputtering are also necessary. The measurement of a wide range of the isotope ratios also requires the ion source memory of previous samples be minimized. This paper describes some progresses towards a potential solution of all these problems by recycled sputtering using fluorinating targets of PbF2 with mg CsF mixed in. The problems encountered indicate that considerable further studies and some redesign of the present ion sources will be desirable.

Direct current sputtering of boron from boron/coron mixtures

DOEpatents

Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

1994-01-01

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

Scale-up of high specific activity 186gRe production using graphite-encased thick 186W targets and demonstration of an efficient target recycling process

DOE PAGES

Balkin, Ethan R.; Gagnon, Katherine; Dorman, Eric; ...

2017-08-18

Production of high specific activity 186gRe is of interest for development of theranostic radiopharmaceuticals. Previous studies have shown that high specific activity 186gRe can be obtained by cyclotron irradiation of enriched 186W via the 186W(d,2n) 186gRe reaction, but most irradiations were conducted at low beam currents and for short durations. In this paper, enriched 186W metal targets were irradiated at high incident deuteron beam currents to demonstrate production rates and contaminants produced when using thick targets. Full-stopping thick targets, as determined using SRIM, were prepared by uniaxial pressing of powdered natural abundance W metal or 96.86% enriched 186W metal encasedmore » between two layers of graphite flakes for target material stabilization. An assessment of structural integrity was made on each target preparation. To assess the performance of graphite-encased thick 186W metal targets, along with the impact of encasing on the separation chemistry, targets were first irradiated using a 22 MeV deuteron beam for 10 min at 10, 20, and 27 μA, with an estimated nominal deuteron energy of 18.7 MeV on the 186W target material (after energy degradation correction from top graphite layer). Gamma-ray spectrometry was performed post EOB on all targets to assess production yields and radionuclidic byproducts. The investigation also evaluated a method to recover and recycle enriched target material from a column isolation procedure. Material composition analyses of target materials, pass-through/wash solutions and recycling process isolates were conducted with SEM, FTIR, XRD, EDS and ICP-MS spectrometry. Finally, to demonstrate scaled-up production, a graphite-encased 186W target made from recycled 186W was irradiated for ~2 h with 18.7 MeV deuterons at a beam current of 27 μA to provide 0.90 GBq (24.3 mCi) of 186gRe, decay-corrected to the end of bombardment. ICP-MS analysis of the isolated 186gRe solution provided data that indicated the specific activity of 186gRe in this scaled-up production run was 2.6±0.5 GBq/μg (70±10 Ci/mg).« less

Scale-up of high specific activity 186gRe production using graphite-encased thick 186W targets and demonstration of an efficient target recycling process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balkin, Ethan R.; Gagnon, Katherine; Dorman, Eric

Production of high specific activity 186gRe is of interest for development of theranostic radiopharmaceuticals. Previous studies have shown that high specific activity 186gRe can be obtained by cyclotron irradiation of enriched 186W via the 186W(d,2n) 186gRe reaction, but most irradiations were conducted at low beam currents and for short durations. In this paper, enriched 186W metal targets were irradiated at high incident deuteron beam currents to demonstrate production rates and contaminants produced when using thick targets. Full-stopping thick targets, as determined using SRIM, were prepared by uniaxial pressing of powdered natural abundance W metal or 96.86% enriched 186W metal encasedmore » between two layers of graphite flakes for target material stabilization. An assessment of structural integrity was made on each target preparation. To assess the performance of graphite-encased thick 186W metal targets, along with the impact of encasing on the separation chemistry, targets were first irradiated using a 22 MeV deuteron beam for 10 min at 10, 20, and 27 μA, with an estimated nominal deuteron energy of 18.7 MeV on the 186W target material (after energy degradation correction from top graphite layer). Gamma-ray spectrometry was performed post EOB on all targets to assess production yields and radionuclidic byproducts. The investigation also evaluated a method to recover and recycle enriched target material from a column isolation procedure. Material composition analyses of target materials, pass-through/wash solutions and recycling process isolates were conducted with SEM, FTIR, XRD, EDS and ICP-MS spectrometry. Finally, to demonstrate scaled-up production, a graphite-encased 186W target made from recycled 186W was irradiated for ~2 h with 18.7 MeV deuterons at a beam current of 27 μA to provide 0.90 GBq (24.3 mCi) of 186gRe, decay-corrected to the end of bombardment. ICP-MS analysis of the isolated 186gRe solution provided data that indicated the specific activity of 186gRe in this scaled-up production run was 2.6±0.5 GBq/μg (70±10 Ci/mg).« less

The first laboratory measurements of sulfur ions sputtering water ice

NASA Astrophysics Data System (ADS)

Galli, André; Pommerol, Antoine; Vorburger, Audrey; Wurz, Peter; Tulej, Marek; Scheer, Jürgen; Thomas, Nicolas; Wieser, Martin; Barabash, Stas

2015-04-01

The upcoming JUpiter ICy moons Explorer mission to Europa, Ganymede, and Callisto has renewed the interest in the interaction of plasma with an icy surface. In particular, the surface release processes on which exosphere models of icy moons rely should be tested with realistic laboratory experiments. We therefore use an existing laboratory facility for space hardware calibration in vacuum to measure the sputtering of water ice due to hydrogen, oxygen, and sulfur ions at energies from 1 keV to 100 keV. Pressure and temperature are comparable to surface conditions encountered on Jupiter's icy moons. The sputter target is a 1cm deep layer of porous, salty water ice. Our results confirm theoretical predictions that the sputter yield from oxygen and sulfur ions should be similar. Thanks to the modular set-up of our experiment we can add further surface processes relevant for icy moons, such as electron sputtering, sublimation, and photodesorption due to UV light.

Carbon Radiation Studies in the DIII-D Divertor with the Monte Carlo Impurity (MCI) Code

NASA Astrophysics Data System (ADS)

Evans, T. E.; Leonard, A. W.; West, W. P.; Finkenthal, D. F.; Fenstermacher, M. E.; Porter, G. D.; Chu, Y.

1998-11-01

Carbon sputtering and transport are modeled in the DIII--D divertor with the MCI code. Calculated 2-D radiation patterns are compared with measured radiation distributions. The results are particularly sensitive to Ti near the divertor target plates. For example, increasing the ion temperature from 8 eV to 20 eV in MCI raises P_rad^div from 1626 to 2862 kW. Although this presents difficulties in assessing which sputtering model best describes the plasma-surface interaction physics (because of experimental uncertainties in T_i), processes which either produce too much or too little radiated power compared to the measured value of 1718 kW can be eliminated. Based on this, the number of viable sputtering options has been reduced from 12 to 4. For the conditions studied, three of these options involve both physical and chemical sputtering, and one requires only physical sputtering.

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

NASA Astrophysics Data System (ADS)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Erosion and Surface Morphology of Silicon Carbide Under Variable DIII-D Divertor Heat Fluxes

NASA Astrophysics Data System (ADS)

Bringuier, Stefan; Abrams, Tyler; Khalifa, Hesham; Thomas, Dan; Holland, Leo; Rudakov, Dmitry; Briesemeister, Alexis

2017-10-01

A SiC coating of 250 μm, deposited onto a graphite DiMES cap via chemical vapor deposition, was exposed to 80 s of H-mode plasma bombardment in the DIII-D outer divertor with steady-state heat fluxes up to 3 MW m-2 and transient loads due to ELMs typically peaking at 10 MW m-2. In-situ monitoring of Si I and Si II atomic spectral lines revealed the presence of significant neutral Si and Si+ impurity influx, which are used to determine quantitative erosion rates via the S/XB method. No visual macroscopic flaking or delamination of the SiC coating was observed, supporting the notion that SiC is thermal-mechanically robust and compatible with graphite substrates at elevated temperatures. Post-mortem profilometric analysis also indicates no pronounced change in surface roughness after plasma exposure. Finally, we investigate aspects of preferential sputtering and changes to surface composition exposure using scanning electron microscopy and Auger electron spectroscopy. Work supported under USDOE Cooperative Agreement DE-FC02-04ER54698.

Monte Carlo simulations of secondary electron emission due to ion beam milling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahady, Kyle; Tan, Shida; Greenzweig, Yuval

We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes thismore » study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.« less

Defects, stoichiometry, and electronic transport in SrTiO{sub 3-δ} epilayers: A high pressure oxygen sputter deposition study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ambwani, P.; Xu, P.; Jeong, J. S.

SrTiO{sub 3} is not only of enduring interest due to its unique dielectric, structural, and lattice dynamical properties, but is also the archetypal perovskite oxide semiconductor and a foundational material in oxide heterostructures and electronics. This has naturally focused attention on growth, stoichiometry, and defects in SrTiO{sub 3}, one exciting recent development being such precisely stoichiometric defect-managed thin films that electron mobilities have finally exceeded bulk crystals. This has been achieved only by molecular beam epitaxy, however (and to a somewhat lesser extent pulsed laser deposition (PLD)), and numerous open questions remain. Here, we present a study of the stoichiometry,more » defects, and structure in SrTiO{sub 3} synthesized by a different method, high pressure oxygen sputtering, relating the results to electronic transport. We find that this form of sputter deposition is also capable of homoepitaxy of precisely stoichiometric SrTiO{sub 3}, but only provided that substrate and target preparation, temperature, pressure, and deposition rate are carefully controlled. Even under these conditions, oxygen-vacancy-doped heteroepitaxial SrTiO{sub 3} films are found to have carrier density, mobility, and conductivity significantly lower than bulk. While surface depletion plays a role, it is argued from particle-induced X-ray emission (PIXE) measurements of trace impurities in commercial sputtering targets that this is also due to deep acceptors such as Fe at 100's of parts-per-million levels. Comparisons of PIXE from SrTiO{sub 3} crystals and polycrystalline targets are shown to be of general interest, with clear implications for sputter and PLD deposition of this important material.« less

Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.

2015-11-15

This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasmamore » in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.« less

Fabrication of electrocatalytic Ta nanoparticles by reactive sputtering and ion soft landing.

PubMed

Johnson, Grant E; Moser, Trevor; Engelhard, Mark; Browning, Nigel D; Laskin, Julia

2016-11-07

About 40 years ago, it was shown that tungsten carbide exhibits similar catalytic behavior to Pt for certain commercially relevant reactions, thereby suggesting the possibility of cheaper and earth-abundant substitutes for costly and rare precious metal catalysts. In this work, reactive magnetron sputtering of Ta in the presence of three model hydrocarbons (2-butanol, heptane, and m-xylene) combined with gas aggregation and ion soft landing was employed to prepare organic-inorganic hybrid nanoparticles (NPs) on surfaces for evaluation of catalytic activity and durability. The electrocatalytic behavior of the NPs supported on glassy carbon was evaluated in acidic aqueous solution by cyclic voltammetry. The Ta-heptane and Ta-xylene NPs were revealed to be active and robust toward promotion of the oxygen reduction reaction, an important process occurring at the cathode in fuel cells. In comparison, pure Ta and Ta-butanol NPs were essentially unreactive. Characterization techniques including atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) were applied to probe how different sputtering conditions such as the flow rates of gases, sputtering current, and aggregation length affect the properties of the NPs. AFM images reveal the focused size of the NPs as well as their preferential binding along the step edges of graphite surfaces. In comparison, TEM images of the same NPs on carbon grids show that they bind randomly to the surface with some agglomeration but little coalescence. The TEM images also reveal morphologies with crystalline cores surrounded by amorphous regions for NPs formed in the presence of 2-butanol and heptane. In contrast, NPs formed in the presence of m-xylene are amorphous throughout. XPS spectra indicate that while the percentage of Ta, C, and O in the NPs varies depending on the sputtering conditions and hydrocarbon employed, the electron binding energies of the elements are similar for all of the NPs. The difference in reactivity between the NPs is attributed to their Ta/C ratios. Collectively, the findings presented herein indicate that reactive magnetron sputtering and gas aggregation combined with ion soft landing offer a promising physical approach for the synthesis of organic-inorganic hybrid NPs that have potential as low-cost durable substitutes for precious metals in catalysis.

Tribo-mechanical and electrical properties of boron-containing coatings

NASA Astrophysics Data System (ADS)

Qian, Jincheng

The development of new hard protective coatings with advanced performance is very important for progress in a variety of scientific and industrial fields. Application of hard protective coatings can significantly improve the performance of parts and components, extend their service life, and save energy in many industrial applications including aerospace, automotive, manufacturing, and other industries. In addition, the multifunctionality of protective coatings is also required in many other application fields such as optics, microelectronics, biomedical, magnetic storage media, etc. Therefore, protective coatings with enhanced tribo-mechanical and corrosion properties as well as other functions are in demand. The coating characteristics can be adjusted by controlling the microstructure at different scales. For example, films with nanostructures, such as superlattice, nanocolumn, and nanocomposite systems, exhibit distinctive characteristics compared to single-phase materials. They show superior tribo-mechanical properties due to the presence of strong interfaces, and different functions can be achieved due to the multi-phase characteristics. Boron-containing materials with their excellent mechanical properties and interesting electronic characteristics are good candidates for functional hard protective coatings. For instance, cubic boron nitride (c-BN), boron carbide (B1-xCx), and titanium diboride (TiB 2) are well known for their high hardness, high thermal stability, and high chemical inertness. An interesting example is the boron carbon nitride (BCN) compound that possesses many attractive properties because its structure is similar to that of carbon (graphite and diamond) and of boron nitride (BN in hexagonal and cubic phases). The main goal of this work is to further develop the family of Boron-containing films including B1-xCx, Ti-B-C, and BCN films fabricated by magnetron sputtering, and to enhance their performance by controlling their microstructure on the nanoscale. Their tribo-mechanical, corrosion, and electrical properties are studied in relation to the composition and microstructure, aiming at enhancing their performance for multi-functional protective coating applications via microstructural design. First, B1-xCx (0 < x < 1) films with tailored tribo-mechanical properties were deposited by magnetron sputtering using one graphite and two boron targets. The hardness of the B1-xC x films was found to reach 25 GPa both for boron-rich and carbon-rich films, and the friction coefficient and wear rate can be adjusted from 0.66 to 0.13 and from 6.4x10-5 mm3/Nm to 1.3x10 -7 mm3/Nm, respectively, by changing the carbon content from 19 to 76 at.%. The hardness variation is closely related to the microstructure, and the low friction and wear rate of the B0.24C0.76 film are due to the high portion of an amorphous carbon phase. Moreover, application of the B0.81C0.19 film improves the corrosion resistance of the M2 steel substrate significantly, indicated by the decrease of the corrosion current by almost four orders of magnitude. Based on the optimization of the B1-xCx films, nanostructured Ti-B-C films with different compositions were deposited by adding titanium by simultaneously sputtering a titanium diboride target. We found that the film microstructure features TiB2 nanocrystallites embedded in an amorphous boron carbide matrix. The film hardness varies from 33 to 42 GPa with different titanium contents, which is related to the changes in microstructure, namely, the size and concentration of the TiB2 nanocrystallites. The friction coefficient and wear rate are in the ranges of 0.37-0.73 and of 3.3x10-6-5.7x10-5 mm3/Nm, respectively, which are affected by the mechanical properties and the surface chemical states of the films. By applying the Ti-B-C films, the corrosion resistance of the M2 steel substrate is significantly enhanced as documented by a reduction of the corrosion current density by two orders of magnitude. BCN films were synthesized by magnetron sputtering using a single B 4C target in an N2: Ar gas mixture. The BCN films exhibit an amorphous structure and contain a mixture of B-C, B-N, and C-N bonds. The films show p-type conductivity with an optical band gap of 1.0 eV. Subsequently, ZnO nanorods were grown on the BCN films using hydrothermal synthesis to form BCN/ZnO nanorods p-n heterojunctions. The performance of the junctions is evaluated by the I-V characterization, which shows a rectification behavior with a rectification ratio of 1500 at the bias voltages of +/-5 V.

Molecular dynamics study of Al and Ni 3Al sputtering by Al clusters bombardment

NASA Astrophysics Data System (ADS)

Zhurkin, Eugeni E.; Kolesnikov, Anton S.

2002-06-01

The sputtering of Al and Ni 3Al (1 0 0) surfaces induced by impact of Al ions and Al N clusters ( N=2,4,6,9,13,55) with energies of 100 and 500 eV/atom is studied at atomic scale by means of classical molecular dynamics (MD). The MD code we used implements many-body tight binding potential splined to ZBL at short distances. Special attention has been paid to model dense cascades: we used quite big computation cells with lateral periodic and damped boundary conditions. In addition, long simulation times (10-25 ps) and representative statistics (up to 1000 runs per each case) were considered. The total sputtering yields, energy and time spectrums of sputtered particles, as well as preferential sputtering of compound target were analyzed, both in the linear and non-linear regimes. The significant "cluster enhancement" of sputtering yield was found for cluster sizes N⩾13. In parallel, we estimated collision cascade features depending on cluster size in order to interpret the nature of observed non-linear effects.

Rarefaction windows in a high-power impulse magnetron sputtering plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos

2013-09-21

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point outmore » on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)« less

A high yield neutron target

NASA Technical Reports Server (NTRS)

Alger, D. L.; Steinberg, R.; Weisenbach, P.

1974-01-01

Target, in cylinder form, rotates rapidly in front of beam. Titanium tritide film is much thicker than range of accelerated deutron. Sputtering electrode permits full use of thick film. Stream of high-velocity coolant provides efficient transfer of heat from target.

Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-01-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.

Direct current sputtering of boron from boron/boron mixtures

DOEpatents

Timberlake, J.R.; Manos, D.; Nartowitz, E.

1994-12-13

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

Self-organization and self-limitation in high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, Andre

The plasma over the racetrack in high power impulse magnetron sputtering develops in traveling ionization zones. Power densities can locally reach 10{sup 9} W/m{sup 2}, which is much higher than usually reported. Ionization zones move because ions are 'evacuated' by the electric field, exposing neutrals to magnetically confined, drifting electrons. Drifting secondary electrons amplify ionization of the same ionization zone where the primary ions came from, while sputtered and outgassing atoms are supplied to the following zone(s). Strong density gradients parallel to the target disrupt electron confinement: a negative feedback mechanism that stabilizes ionization runaway.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

NASA Astrophysics Data System (ADS)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

2013-10-01

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

NASA Technical Reports Server (NTRS)

Topich, J. A.

1977-01-01

It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

NSTAR Extended Life Test Discharge Chamber Flake Analysis

NASA Technical Reports Server (NTRS)

deGroh, Kim K.; Banks, Bruce A.; Karniotis, Christina A.

2005-01-01

The Extended Life Test (ELT) of the NASA Solar Electric Propulsion Technology Readiness (NSTAR) ion thruster was concluded after 30,352 hours of operation. The ELT was conducted using the Deep Space 1 (DS1) back-up flight engine, a 30 cm diameter xenon ion thruster. Post-test inspection of the ELT engine revealed numerous contaminant flakes distributed over the bottom of the cylindrical section of the anode within the discharge chamber (DC). Extensive analyses were conducted to determine the source of the particles, which is critical to the understanding of degradation mechanisms of long life ion thruster operation. Analyses included: optical microscopy (OM) and particle length histograms, field emission scanning electron microscopy (FESEM) combined with energy dispersive spectroscopy (EDS), and atomic oxygen plasma exposure tests. Analyses of the particles indicate that the majority of the DC flakes consist of a layered structure, typically with either two or three layers. The flakes comprising two layers were typically found to have a molybdenum-rich (Mo-rich) layer on one side and a carbon-rich (C-rich) layer on the other side. The flakes comprising three layers were found to be sandwich-like structures with Mo-rich exterior layers and a C-rich interior layer. The presence of the C-rich layers indicates that these particles were produced by sputter deposition build-up on a surface external to the discharge chamber from ion sputter erosion of the graphite target in the test chamber. This contaminant layer became thick enough that particles spalled off, and then were electro-statically attracted into the ion thruster interior, where they were coated with Mo from internal sputter erosion of the screen grid and cathode components. Atomic oxygen tests provided evidence that the DC chamber flakes are composed of a significant fraction of carbon. Particle size histograms further indicated that the source of the particles was spalling of carbon flakes from downstream surfaces. Analyses of flakes taken from the downstream surface of the accelerator grid provided additional supportive information. The production of the downstream carbon flakes, and hence the potential problems associated with the flake particles in the ELT ion thruster engine is a facility induced effect and would not occur in the space environment.

Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

2010-01-01

Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Analyse de l'interface cuivre/Teflon AF1600 par spectroscopie des photoelectrons rayons x

NASA Astrophysics Data System (ADS)

Popovici, Dan

The speed of electrical signals through the microelectronic multilevel interconnects depends of the delay time R x C. In order to improve the transmission speed of future microdevices, the microelectronics industry requires the use of metals having lower resistivities and insulators having lower permittivities. Copper and fluoropolymers are interesting candidates for the replacement of the presently used Al/polyimide technology. This thesis presents an X-ray photoelectron spectroscopy (XPS) analysis of the Cu/Teflon AF1600 interface, in order to have a better understanding of those interfacial interactions leading to improved adhesion. Several deposition methods, such as evaporation, sputtering and laser-induced chemical deposition were analyzed and compared. X-ray photoelectron spectroscopy (XPS) was used as the primary characterization technique of the different surfaces and interfaces. In the case of evaporation and sputtering, the loss of fluorine and oxygen atoms leads to graphitization and the crosslinking of carbon chains. The extent of damage caused by copper deposition is higher for sputter deposition because of the higher energies of the incidents atoms. This energy (two orders of magnitude higher than the energy involved in the evaporation) is also responsible for the total reaction of Cu with F and C. For the physical depositions (sputtering and evaporation), an angle-resolved XPS diffusion study showed the copper distribution as a function of depth. (i) For sputter deposition, this distribution is uniform. (ii) In the case of evaporation, we computed the concentration profile using the inverse Laplace transform. Several samples, annealed at different temperatures, were used to calculate the diffusion coefficients for the Cu/Teflon AF1600 interface. The study of interactions at the interface between Teflon AF1600 and copper deposited by different metallization techniques permitted us to elucidate some aspects related to the chemistry and structure of the interface. The presence of the strong Cu-C bond may lead to an enhanced adhesion but a pretreatment (plasma RF, X-ray or excimer laser) is necessary to increase the surface concentration of reactive groups. (Abstract shortened by UMI.)

Deuterium Retention and Physical Sputtering of Low Activation Ferritic Steel

NASA Astrophysics Data System (ADS)

T, Hino; K, Yamaguchi; Y, Yamauchi; Y, Hirohata; K, Tsuzuki; Y, Kusama

2005-04-01

Low activation materials have to be developed toward fusion demonstration reactors. Ferritic steel, vanadium alloy and SiC/SiC composite are candidate materials of the first wall, vacuum vessel and blanket components, respectively. Although changes of mechanical-thermal properties owing to neutron irradiation have been investigated so far, there is little data for the plasma material interactions, such as fuel hydrogen retention and erosion. In the present study, deuterium retention and physical sputtering of low activation ferritic steel, F82H, were investigated by using deuterium ion irradiation apparatus. After a ferritic steel sample was irradiated by 1.7 keV D+ ions, the weight loss was measured to obtain the physical sputtering yield. The sputtering yield was 0.04, comparable to that of stainless steel. In order to obtain the retained amount of deuterium, technique of thermal desorption spectroscopy (TDS) was employed to the irradiated sample. The retained deuterium desorbed at temperature ranging from 450 K to 700 K, in the forms of DHO, D2, D2O and hydrocarbons. Hence, the deuterium retained can be reduced by baking with a relatively low temperature. The fluence dependence of retained amount of deuterium was measured by changing the ion fluence. In the ferritic steel without mechanical polish, the retained amount was large even when the fluence was low. In such a case, a large amount of deuterium was trapped in the surface oxide layer containing O and C. When the fluence was large, the thickness of surface oxide layer was reduced by the ion sputtering, and then the retained amount in the oxide layer decreased. In the case of a high fluence, the retained amount of deuterium became comparable to that of ferritic steel with mechanical polish or SS 316L, and one order of magnitude smaller than that of graphite. When the ferritic steel is used, it is required to remove the surface oxide layer for reduction of fuel hydrogen retention. Ferritic steel sample was exposed to the environment of JFT-2M tokamak in JAERI and after that the deuterium retention was examined. The result was roughly the same as the case of deuterium ion irradiation experiment.

10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

NASA Astrophysics Data System (ADS)

Peng, Xiao; Zhao, Ming; Zhuang, Daming; Sun, Rujun; Zhang, Leng; Wei, Yaowei; Lv, Xunyan; Wu, Yixuan; Ren, Guoan

2018-06-01

We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

NASA Astrophysics Data System (ADS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

Preparation of multilayered nanocrystalline thin films with composition-modulated interfaces

NASA Astrophysics Data System (ADS)

Biro, D.; Barna, P. B.; Székely, L.; Geszti, O.; Hattori, T.; Devenyi, A.

2008-06-01

The properties of multilayer thin film structures depend on the morphology and structure of interfaces. A broad interface, in which the composition is varying, can enhance, e.g., the hardness of multilayer thin films. In the present experiments multilayers of TiAlN and CrN as well as TiAlN, CrN and MoS 2 were studied by using unbalanced magnetron sputter sources. The sputter sources were arranged side by side on an arc. This arrangement permits development of a transition zone between the layers, where the composition changes continuously. The multilayer system was deposited by one-fold oscillating movement of substrates in front of sputter sources. Thicknesses of layers could be changed both by oscillation frequency and by the power applied to sputter sources. Ti/Al: 50/50 at%, pure chromium and MoS 2 targets were used in the sputter sources. The depositions were performed in an Ar-N 2 mixture at 0.22 Pa working pressure. The sputtering power of the TiAl source was feed-back adjusted in fuzzy-logic mode in order to avoid fluctuation of the TiAl target sputter rate due to poisoning of the target surface. Structure characterization of films deposited on <1 0 0> Si wafers covered by thermally grown SiO 2 was performed by cross-sectional transmission electron microscopy. At first a 100 nm thick Cr base layer was deposited on the substrate to improve adhesion, which was followed by a CrN transition layer. The CrN transition layer was followed by a 100 nm thick TiAlN/CrN multilayer system. The TiAlN/CrN/MoS 2 multilayer system was deposited on the surface of this underlayer system. The underlayer systems Cr, CrN and TiAlN/CrN were crystalline with columnar structure according to the morphology of zone T of the structure zone models. The column boundaries contained segregated phases showing up in the under-focused TEM images. The surface of the underlayer system was wavy due to dome-shaped columns. The nanometer-scaled TiAlN/CrN/MoS 2 multilayer system followed this waviness. Crystallinity of the TiAlN and CrN layers in the multilayer system decreases with increasing thickness of the MoS 2 layer.

A comparative study on NbOx films reactively sputtered from sintered and cold gas sprayed targets

NASA Astrophysics Data System (ADS)

Lorenz, Roland; O'Sullivan, Michael; Fian, Alexander; Sprenger, Dietmar; Lang, Bernhard; Mitterer, Christian

2018-04-01

The aim of this work is to evaluate novel cold gas sprayed Nb targets in a reactive sputter deposition process of thin films with respect to the widely used sintered Nb targets. With the exception of a higher target discharge voltage of ∼100 V for the cold gas sprayed targets and the thus higher film growth rate compared to sintered targets, NbOx films with comparable microstructure and properties were obtained for both target variants. The amorphous films with thicknesses between 2.9 and 4.9 μm present an optical shift from dark and non-transparent towards transparent properties, as the oxygen partial pressure increases. X-ray photoelectron spectroscopy confirms the occurrence of the Nb5+ oxidation state for the highest oxygen partial pressure, while Nb4+ is additionally present at lower oxygen partial pressure settings. With a maximal transparency of ∼80% and a refractive index of ∼2.5, the transparent films show characteristics similar to Nb2O5.

Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets

NASA Astrophysics Data System (ADS)

Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi

2000-10-01

Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.

The production and sputtering of S2 by keV ion bombardment

NASA Technical Reports Server (NTRS)

Boring, J. W.; Chrisey, D. B.; Oshaughnessy, D. J.; Phipps, J. A.; Zhao, N.

1986-01-01

The ion bombardment of S-containing molecules in comets is simulated experimentally. Mass-analyzed 30-keV beams of Ar(+) and He(+) are directed at solid S, H2S, and CS2 targets at temperatures 15 K, and the neutral molecular species produced are ionized and analyzed using a quadrupole mass spectrometer. The dominant species detected are S1 and S2 for the S target, H2S and S2 for the H2S target, and S, CS, S2, and CS2 for the CS2 target. In the latter case, it is found that after about 10 to the 14th He(+) ions/sq cm have struck the target, further sputtering is prevented by formation of a dark brown deposit which is stable at room temperature; the residue forms more slowly when Ar(+) ions are used. These results, indicating relatively efficient S2 production by ion bombardment, are applied to theoretical models of S2 production and/or ejection by solar-wind, solar-flare, or cosmic-ray ions striking comets. It is found that direct solar-wind production of S2 by sputtering is unlikely at realistic bombardment rates, but that H2S-S2 conversion by energetic ions could be significant, with less stringent ice-temperature and irradiation-flux constraints than in the case of S2 production by photons.

Are the argon metastables important in high power impulse magnetron sputtering discharges?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gudmundsson, J. T., E-mail: tumi@hi.is; Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik; Lundin, D.

2015-11-15

We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization ismore » always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.« less

Radiofrequency-sputtered coatings for lubrication system components and other complex surfaces

NASA Technical Reports Server (NTRS)

Spalvins, T.

1972-01-01

Irregularly shaped surfaces, such as lubrication system components (ball bearings, seals, gears, etc.), can be coated on all surfaces, including irregular shapes, when radiofrequency sputtering is used. When the specimen is properly located with respect to the sputtering target, the sputtered material covers the entire surface of the object irrespective of its geometrical configuration. An adherent, dense film is formed. The film thickness varies from 20 to 50 percent on, for example, a hearing cage or race depending on its geometry. When sputtered solid film lubricants such as molybdenum disulfide are used, a film thickness only of the order of 10 to the minus 7th power m (thousands of angstroms) is required at the contacting areas. It is only essential to determine the required film thickness at the critical areas in need of lubrication. The sections outside the areas to be lubricated fall within the thickness deviation range of 20 to 50 percent, which still constitutes a negligible change respect to tolerance requirements.

Effects of sputtering mode on the microstructure and ionic conductivity of yttria-stabilized zirconia films

NASA Astrophysics Data System (ADS)

Yeh, Tsung-Her; Lin, Ruei-De; Cherng, Bo-Ruei; Cherng, Jyh-Shiarn

2018-05-01

The microstructure and ionic conductivity of reactively sputtered yttria-stabilized zirconia (YSZ) films are systematically studied. Those films were reactively sputtered in various sputtering modes using a closed-loop controlled system with plasma emission monitoring. A transition-mode sputtering corresponding to 45% of target poisoning produces a microstructure with ultrafine crystallites embedded in an amorphous matrix, which undergoes an abnormal grain growth upon annealing at 800 °C. At 500 °C, the measured ionic conductivity of this annealed film is higher, by about a half order of magnitude, than those of its poisoned-mode counterparts, which are in turn significantly higher than that of the YSZ bulk by about two orders of magnitude. The abnormally-grown ultra-large grain size of the film deposited in the transition mode and then annealed is believed to be responsible for the former comparison due to the suppression of the grain boundary blocking effect, while the latter comparison can be attributed to the interface effect.

Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com; Pandey, Nidhi; Behera, Layanta

2016-05-23

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films.more » In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.« less

Industrial ion source technology

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1978-01-01

An analytical model was developed to describe the development of a coned surface texture with ion bombardment and simultaneous deposition of an impurity. A mathematical model of sputter deposition rate from a beveled target was developed in conjuction with the texturing models to provide an important input to that model. The establishment of a general procedure that will allow the treatment of manay different sputtering configurations is outlined. Calculation of cross sections for energetic binary collisions was extened to Ar, Kr.. and Xe with total cross sections for viscosity and diffusion calculated for the interaction energy range from leV to 1000eV. Physical sputtering and reactive ion etching experiments provided experimental data on the operating limits of a broad beam ion source using CF4 as a working gas to produce reactive species in a sputtering beam. Magnetic clustering effects are observed when Al is seeded with Fe and sputtered with Ar(?) ions. Silicon was textured at a micron scale by using a substrate temperature of 600 C.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

PubMed Central

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Sputtering Erosion in Ion and Plasma Thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1996-01-01

Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

Growth and characterization of high quality ZnS thin films by RF sputtering

NASA Astrophysics Data System (ADS)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Effect of filler content on the properties of expanded- graphite-based composite bipolar plates for application in polymer electrolyte membrane fuel cells

NASA Astrophysics Data System (ADS)

Masand, Aakash; Borah, Munu; Pathak, Abhishek K.; Dhakate, Sanjay R.

2017-09-01

Minimization of the weight and volume of a hydrogen-based PEM fuel cell stack is an essential area of research for the development and commercialization of PEMFCs for various applications. Graphite-based composite bipolar plates have significant advantages over conventional metallic bipolar plates due to their corrosion resistivity and low cost. On the other hand, expanded graphite is seen to be a potential candidate for facilitating the required electrical, thermal and mechanical properties of bipolar plates with a low density. Therefore, in the present study, the focus is on minimization of the high loading of graphite and optimizes its composition to meet the target properties of bipolar plates as per the USDOE target. Three types of expanded graphite (EG)-phenolic-resin-based composite bipolar plates were developed by partially replacing the expanded graphite content with natural graphite (NG) and carbon black as an additional filler. The three types of composite plate with the reinforcing constituent ratio EG:NG:R (25:25:50) give a bending strength of 49 MPa, a modulus of ~6 GPa, electrical conductivity  >100 S cm-1, a shore hardness of 55 and a bulk density of 1.55 g/cc. The 50 wt% loading of resin is sufficient to wet the 50 wt% filler content in the composite plate. This study gives an insight into using hybrid reinforcements in order to achieve the desired properties of bipolar plates.

Surface science approach to Pt/carbon model catalysts: XPS, STM and microreactor studies

NASA Astrophysics Data System (ADS)

Motin, Abdul Md.; Haunold, Thomas; Bukhtiyarov, Andrey V.; Bera, Abhijit; Rameshan, Christoph; Rupprechter, Günther

2018-05-01

Pt nanoparticles supported on carbon are an important technological catalyst. A corresponding model catalyst was prepared by physical vapor deposition (PVD) of Pt on sputtered HOPG (highly oriented pyrolytic graphite). The carbon substrate before and after sputtering as well as the Pt/HOPG system before and after Pt deposition and annealing were examined by XPS and STM. This yielded information on the surface density of defects, which serve as nucleation centres for Pt, and on the size distribution (mean size/height) of the Pt nanoparticles. Two different model catalysts were prepared with mean sizes of 2.0 and 3.6 nm, both turned out to be stable upon UHV-annealing to 300 °C. After transfer into a UHV-compatible flow microreactor and subsequent cleaning in UHV and under mbar pressure, the catalytic activity of the Pt/HOPG model system for ethylene hydrogenation was examined under atmospheric pressure flow conditions. This enabled to determine temperature-dependent conversion rates, turnover frequencies (TOFs) and activation energies. The catalytic results obtained are in line with the characteristics of technological Pt/C, demonstrating the validity of the current surface science based model catalyst approach.

Effect of post-annealing on sputtered MoS2 films

NASA Astrophysics Data System (ADS)

Wong, W. C.; Ng, S. M.; Wong, H. F.; Cheng, W. F.; Mak, C. L.; Leung, C. W.

2017-12-01

Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantationmore » and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.« less

Application of optical broadband monitoring to quasi-rugate filters by ion-beam sputtering

NASA Astrophysics Data System (ADS)

Lappschies, Marc; Görtz, Björn; Ristau, Detlev

2006-03-01

Methods for the manufacture of rugate filters by the ion-beam-sputtering process are presented. The first approach gives an example of a digitized version of a continuous-layer notch filter. This method allows the comparison of the basic theory of interference coatings containing thin layers with practical results. For the other methods, a movable zone target is employed to fabricate graded and gradual rugate filters. The examples demonstrate the potential of broadband optical monitoring in conjunction with the ion-beam-sputtering process. First-characterization results indicate that these types of filter may exhibit higher laser-induced damage-threshold values than those of classical filters.

Tailored synthesis of TiC/a-C nanocomposite tribological coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Martinez, D.; Lopez-Cartes, C.; Justo, A.

2005-11-15

Composite coatings made of nanocrystalline TiC (nc-TiC) particles and amorphous carbon (a-C) have been prepared in a double magnetron sputtering system using graphite and titanium targets under Ar bombardment. Chemical composition and microstructure of coatings were studied by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and x-ray diffraction (XRD) for a set of samples prepared varying the ratio and intensity of power applied to each magnetron. Changes in coatings microstructure, from a quasipolycrystalline TiC to a nanocomposite formed by nanocrystals of TiC embedded in an amorphous matrix of carbon (nc-TiC/a-C), are observed depending on the synthesis conditions. Tribologicalmore » and mechanical properties of coatings were tested using a pin-on-disk tribometer and an ultramicrohardness indenter, respectively. Coatings with moderate hardness (7-27 GPa), low friction (0.1-0.2), and low wear rates (k{approx}10{sup -7} mm{sup 3}/N m) were obtained. A percentage between 15% and 30% of TiC is found as an optimum value to get a good compromise between good mechanical and tribological properties. Finally, a mapping of the mechanical and tribological properties of the nc-TiC/a-C system is presented for the synthesis conditions employed.« less

Carbon nanotubes and methods of forming same at low temperature

DOEpatents

Biris, Alexandru S.; Dervishi, Enkeleda

2017-05-02

In one aspect of the invention, a method for growth of carbon nanotubes includes providing a graphitic composite, decorating the graphitic composite with metal nanostructures to form graphene-contained powders, and heating the graphene-contained powders at a target temperature to form the carbon nanotubes in an argon/hydrogen environment that is devoid of a hydrocarbon source. In one embodiment, the target temperature can be as low as about 150.degree. C. (.+-.5.degree. C.).

Graphitic and oxidised high pressure high temperature (HPHT) nanodiamonds induce differential biological responses in breast cancer cell lines.

PubMed

Woodhams, Benjamin; Ansel-Bollepalli, Laura; Surmacki, Jakub; Knowles, Helena; Maggini, Laura; de Volder, Michael; Atatüre, Mete; Bohndiek, Sarah

2018-06-19

Nanodiamonds have demonstrated potential as powerful sensors in biomedicine, however, their translation into routine use requires a comprehensive understanding of their effect on the biological system being interrogated. Under normal fabrication processes, nanodiamonds are produced with a graphitic carbon shell, but are often oxidized in order to modify their surface chemistry for targeting to specific cellular compartments. Here, we assessed the biological impact of this purification process, considering cellular proliferation, uptake, and oxidative stress for graphitic and oxidized nanodiamond surfaces. We show for the first time that oxidized nanodiamonds possess improved biocompatibility compared to graphitic nanodiamonds in breast cancer cell lines, with graphitic nanodiamonds inducing higher levels of oxidative stress despite lower uptake.

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitelaru, Catalin; National Institute for Optoelectronics, Magurele-Bucharest, RO 077125; Lundin, Daniel

2013-09-02

The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuchen; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Tanaka, Koichi

2015-03-23

High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures.

PubMed

Saito, Yuta; Fons, Paul; Makino, Kotaro; Mitrofanov, Kirill V; Uesugi, Fumihiko; Takeguchi, Masaki; Kolobov, Alexander V; Tominaga, Junji

2017-10-12

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi 55 Te 45 to Bi 43 Te 57 when a Bi 2 Te 3 alloy target is used, and from Bi 42 Te 58 to Bi 40 Te 60 (Bi 2 Te 3 ) for a Te-rich Bi 30 Te 70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi 2 Te 3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi 4 Te 3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Characterization of high power impulse magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Hala, Matej

Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and ionized oxygen, since the monitored discharge is operated above a fully poisoned (oxidized) target from which only a minimum of Cr is sputtered. No signs of self-sputtering have been detected, in contrast to the discharges in Ar, N2 and N2/Ar mixtures previously investigated. Paper IV: In the fourth paper, we study different power management approaches in HiPIMS and MPPMS and their effects on the pulsed discharge evolution, plasma composition, and metal ionization estimated by OES. It is shown that HiPIMS is the only technique that enables the discharge operation in self-sputtering mode within the investigated range of applied powers, resulting in a significantly higher ionization of the sputtered metal than that reached with MPPMS. In contrast to HiPIMS, MPPMS provides a higher versatility in adjusting the pulse shape and pulse length. This feature can be particularly beneficial, for instance, in the discharge ignition. Nb coatings prepared by HiPIMS and MPPMS have very similar deposition rates that are lower than in DCMS. All films prepared at p = 1Pa possess a dense columnar structure. Coatings deposited by the two high power pulsed discharges exhibit higher compressive stress and larger out-of-plane lattice spacing than those prepared by DC sputtering under comparable conditions. At higher pressure, p = 2Pa, DCMS-grown films show a tensile stress due to a porous microstructure, while films prepared by HiPIMS and MPPMS are dense and in compression, most probably due to the substantial ion bombardment. Paper V: In the last paper, we analyze the behavior of the HiPIMS, MPPMS and DCMS discharges in reactive O2/Ar gas mixtures and evaluate the characteristics of the fabricated NbOx films. We demonstrate that the surface metal oxides can be effectively sputter-eroded from the target during both HiPIMS and MPPMS pulses, and that sputtering from a partially oxide-free target is possible even at high oxygen concentrations. This results in a hysteresisfree deposition process which allows one to prepare optically transparent b2O5 coatings at a high growth rate without the need of feedback control commonly used in reactive DCMS. Nb2O 5 coatings prepared by both reactive high power pulsed discharges exhibited a high index of refraction, a low extinction coefficient, a near-zero internal stress, and high hardness and Young's modulus. The HiPIMS-deposited coatings showed the highest deposition rate and the highest index of refraction. The latter observation was related to the higher film density. In comparison, MPPMS exhibited the highest power-normalized deposition rate among the three investigated deposition techniques, possibly due to the longer period that is available for the gradual target cleaning. (Abstract shortened by UMI.).

Molybdenum and carbon atom and carbon cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, Eider

Exit-angle resolved Mo atom sputtering yield under Xe ion bombardment and carbon atom and cluster (C2 and C3) sputtering yields under Xe, Kr, Ar, Ne and He ion bombardment from a plasma are measured for low incident energies (75--225 eV). An energy-resolved quadrupole mass spectrometer (QMS) is used to detect the fraction of un-scattered sputtered neutrals that become ionized in the plasma; the angular distribution is obtained by changing the angle between the target and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles between the sample and the QMS. The elastic scattering cross-sections of C, C2 and C3 with the different bombarding gas neutrals is obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. Because the results obtained with the QMS are relative, the Mo atom sputtering results are normalized to the existing data in the literature and the total sputtering yield for carbon (C+C 2+C3) for each bombarding gas is obtained from weight loss measurements. The absolute sputtering yield for C, C2 and C 3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. The angular sputtering distribution for Mo has a maximum at theta=60°, and this maximum becomes less pronounced as the incident ion energy increases. The results of the Monte Carlo TRIDYN code simulation for the angular distribution of Mo atoms sputtered by Xe bombardment are in agreement with the experiments. For carbon sputtering under-cosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases are also observed. The C, C2 and C3 sputtering yield data shows a clear decrease of the atom to cluster (C/C2 and C/C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

NASA Astrophysics Data System (ADS)

Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

2016-01-01

As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10⿿xAgx(PO4)6(OH)2⿿x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

Electric Propulsion Induced Secondary Mass Spectroscopy

NASA Technical Reports Server (NTRS)

Amini, Rashied; Landis, Geoffrey

2012-01-01

A document highlights a means to complement remote spectroscopy while also providing in situ surface samples without a landed system. Historically, most compositional analysis of small body surfaces has been done remotely by analyzing reflection or nuclear spectra. However, neither provides direct measurement that can unambiguously constrain the global surface composition and most importantly, the nature of trace composition and second-phase impurities. Recently, missions such as Deep Space 1 and Dawn have utilized electric propulsion (EP) accelerated, high-energy collimated beam of Xe+ ions to propel deep space missions to their target bodies. The energies of the Xe+ are sufficient to cause sputtering interactions, which eject material from the top microns of a targeted surface. Using a mass spectrometer, the sputtered material can be determined. The sputtering properties of EP exhaust can be used to determine detailed surface composition of atmosphereless bodies by electric propulsion induced secondary mass spectroscopy (EPI-SMS). EPI-SMS operation has three high-level requirements: EP system, mass spectrometer, and altitude of about 10 km. Approximately 1 keV Xe+ has been studied and proven to generate high sputtering yields in metallic substrates. Using these yields, first-order calculations predict that EPI-SMS will yield high signal-to-noise at altitudes greater than 10 km with both electrostatic and Hall thrusters.

Interaction of the high energy deuterons with the graphite target in the plasma focus devices based on Lee model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akel, M., E-mail: pscientific2@aec.org.sy; Alsheikh Salo, S.; Ismael, Sh.

2014-07-15

Numerical experiments are systematically carried out using the Lee model code extended to compute the ion beams on various plasma focus devices operated with Deuterium gas. The deuteron beam properties of the plasma focus are studied for low and high energy plasma focus device. The energy spectral distribution for deuteron ions ejected from the pinch plasma is calculated and the ion numbers with energy around 1 MeV is then determined. The deuteron–graphite target interaction is studied for different conditions. The yield of the reaction {sup 12}C(d,n){sup 13}N and the induced radioactivity for one and multi shots plasma focus devices in themore » graphite solid target is investigated. Our results present the optimized high energy repetitive plasma focus devices as an alternative to accelerators for the production of {sup 13}N short lived radioisotopes. However, technical challenges await solutions on two fronts: (a) operation of plasma focus machines at high rep rates for a sufficient period of time (b) design of durable targets that can take the thermal load.« less

Evaluation of selected thermal control coatings for long-life space structures

NASA Technical Reports Server (NTRS)

Teichman, Louis A.; Slemp, Wayne S.; Witte, William G., Jr.

1992-01-01

Graphite-reinforced resin matrix composites are being considered for spacecraft structural applications because of their light weight, high stiffness, and lower thermal expansion. Thin protective coatings with stable optical properties and the proper ratio of solar absorption (alpha sub s) to thermal emittance (epsilon) minimize orbital thermal extremes and protect these materials against space environment degradation. Sputtered coatings applied directly to graphite/epoxy composite surfaces and anodized coatings applied to thin aluminum foil were studied for use both as an atomic oxygen barrier and as thermal control coatings. Additional effort was made to develop nickel-based coatings which could be applied directly to composites. These coating systems were selected because their inherent tenacity made them potentially more reliable than commercial white paints for long-life space missions. Results indicate that anodized aluminum foil coatings are suitable for tubular and flat composite structures on large platforms in low Earth orbit. Anodized foil provides protection against some elements of the natural space environment (atomic oxygen, ultraviolet, and particulate radiation) and offers a broad range of tailored alpha sub s/epsilon. The foil is readily available and can be produced in large quantities, while the anodizing process is a routine commercial technique.

In situ oxygen plasma cleaning of microswitch surfaces—comparison of Ti and graphite electrodes

NASA Astrophysics Data System (ADS)

Oh, Changho; Streller, Frank; Ashurst, W. Robert; Carpick, Robert W.; de Boer, Maarten P.

2016-11-01

Ohmic micro- and nanoswitches are of interest for a wide variety of applications including radio frequency communications and as low power complements to transistors. In these switches, it is of paramount importance to maintain surface cleanliness in order to prevent frequent failure by tribopolymer growth. To prepare surfaces, an oxygen plasma clean is expected to be beneficial compared to a high temperature vacuum bakeout because of shorter cleaning time (<5 min compared to ~24 h) and active removal of organic contaminants. We demonstrate that sputtering of the electrode material during oxygen plasma cleaning is a critical consideration for effective cleaning of switch surfaces. With Ti electrodes, a TiO x layer forms that increases electrical contact resistance. When plasma-cleaned using graphite electrodes, the resistance of Pt-coated microswitches exhibit a long lifetime with consistently low resistance (<0.5 Ω variation over 300 million cycles) if the test chamber is refilled with ultra-high purity nitrogen and if the devices are not exposed to laboratory air. Their current-voltage characteristic is also linear at the millivolt level. This is important for nanoswitches which will be operated in that range.

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

NASA Astrophysics Data System (ADS)

Komlev, Anton A.; Minzhulina, Ekaterina A.; Smirnov, Vladislav V.; Shapovalov, Viktor I.

2018-01-01

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm2 and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process.

Optical and hydrophobic properties of co-sputtered chromium and titanium oxynitride films

NASA Astrophysics Data System (ADS)

Rawal, Sushant K.; Chawla, Amit Kumar; Jayaganthan, R.; Chandra, Ramesh

2011-08-01

The chromium and titanium oxynitride films on glass substrate were deposited by using reactive RF magnetron sputtering in the present work. The structural and optical properties of the chromium and titanium oxynitride films as a function of power variations are investigated. The chromium oxynitride films are crystalline even at low power of Cr target (≥60 W) but the titanium oxynitride films are amorphous at low target power of Ti target (≤90 W) as observed from glancing incidence X-ray diffraction (GIXRD) patterns. The residual stress and strain of the chromium oxynitride films are calculated by sin 2 ψ method, as the average crystallite size decreases with the increase in sputtering power of the Cr target, higher stress and strain values are observed. The chromium oxynitride films changes from hydrophilic to hydrophobic with the increase of contact angle value from 86.4° to 94.1°, but the deposited titanium oxynitride films are hydrophilic as observed from contact angle measurements. The changes in surface energy were calculated using contact angle measurements to substantiate the hydrophobic properties of the films. UV-vis and NIR spectrophotometer were used to obtain the transmission and absorption spectra, and the later was used for determining band gap values of the films, respectively. The refractive index of chromium and titanium oxynitride films increases with film packing density due to formation of crystalline chromium and titanium oxynitride films with the gradual rise in deposition rate as a result of increase in target powers.

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

NASA Astrophysics Data System (ADS)

Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

2016-06-01

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav; University of South Bohemia, Institute of Physics and Biophysics, Branisovska 31, 370 05 Ceske Budejovice; Herrendorf, Ann-Pierra

2012-11-01

This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a highmore » concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.« less

Synthesis and Characterization of Molybdenum (Mo) Thin Films Using DC-Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Pandharkar, Subhash M.; Rondiya, Sachin R.; Rokade, Avinash V.; Gabhale, Bharat B.; Pathan, Habib M.; Jadkar, Sandesh R.

2018-03-01

In present work, we report synthesis of Mo thin films by DC-magnetron sputtering method. The structural, optical, morphological and electrical properties were investigated as a function of target-to-substrate distance. From the results, it is evident that with increase in target-to-substrate distance the thickness of films decreases while its sheet resistance and electrical resistivity increases, which is confirmed by van der Pauw method. Low angle XRD analysis revealed that with increase in target-to-substrate distance preferred orientation of Mo crystallites changes from (211) to (110) and its size decreases. The FE-SEM analysis revealed a significant change in surface morphology with increase in target-to-substrate distance. UV-Visible spectroscopy analysis showed that Mo films deposited at high target-to-substrate distance have more reflection than those deposited at lower target-to-substrate. Finally, adhesion test was performed using scotch hatch tape adhesion test which show all Mo films have excellent adhesion over the entire range of target-to-substrate distance studied. The employment of such Mo films as back contact can be useful to improve efficiency of CZTS solar cells.

Carbon atom and cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, E.; Doerner, R. P.; Shimada, M.; Tynan, G. R.

2008-08-01

Exit-angle resolved carbon atom and cluster (C2 and C3) sputtering yields are measured during different noble gas (Xe, Kr, Ar, Ne, and He) ion bombardments from a plasma, for low incident energies (75-225 eV). A quadrupole mass spectrometer (QMS) is used to detect the fraction of sputtered neutrals that is ionized in the plasma and to obtain the angular distribution by changing the angle between the target normal and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles in the region between the sample and the QMS. The effective elastic scattering cross sections of C, C2, and C3 with the different bombarding gas neutrals are obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. The total sputtering yield (C+C2+C3) for each bombarding gas is obtained from weight-loss measurements and the sputtering yield for C, C2, and C3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. We observe undercosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases and a clear decrease of the atom to cluster (C2 and C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne, and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-04-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-06-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Physical Vapor Deposition of Thin Films

NASA Astrophysics Data System (ADS)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Foundations of DC plasma sources

NASA Astrophysics Data System (ADS)

Tomas Gudmundsson, Jon; Hecimovic, Ante

2017-12-01

A typical dc discharge is configured with the negative cathode at one end and a positive anode at the other end, separated by a gas filled gap, placed inside a long glass cylinder. A few hundred volts between the cathode and anode is required to maintain the discharge. The type of discharge that is formed between the two electrodes depends upon the pressure of the working gas, the nature of the working gas, the applied voltage and the geometry of the discharge. We discuss the current-voltage characteristics of the discharge as well as the distinct structure that develops in the glow discharge region. The dc glow discharge appears in the discharge current range from μA to mA at 0.5-300 Pa pressure. We discuss the various phenomena observed in the dc glow discharge, including the cathode region, the positive column, and striations. The dc glow discharge is maintained by the emission of secondary electrons from the cathode target due to the bombardment of ions. For decades, the dc glow discharge has been used as a sputter source. Then it is often operated as an obstructed abnormal glow discharge and the required applied voltage is in the range 2-5 kV. Typically, the cathode target (the material to be deposited) is connected to a negative voltage supply (dc or rf) and the substrate holder faces the target. The relatively high operating pressure, in the range from 2 to 4 Pa, high applied voltages, and the necessity to have a conductive target limit the application of dc glow discharge as a sputter source. In order to lower the discharge voltage and expand the operation pressure range, the lifetime of the electrons in target vicinity is increased through applying magnetic field, by adding permanent magnets behind the cathode target. This arrangement is coined the magnetron sputtering discharge. The various configurations of the magnetron sputtering discharge and its applications are described. Furthermore, the use of dc discharges for chemical analysis, the Penning discharge and the hollow cathode discharges and some of its applications are briefly discussed.

Proton induced activity in graphite - comparison between measurement and simulation

NASA Astrophysics Data System (ADS)

Kiselev, Daniela; Bergmann, Ryan; Schumann, Dorothea; Talanov, Vadim; Wohlmuther, Michael

2018-06-01

The Paul Scherrer Institut (PSI) operates the Meson production target stations E and M with 590 MeV protons at currents of up to 2.4 mA. Both targets consist of polycrystalline graphite and rotate with 1 Hz due to the high power deposition (40 kW at 2 mA) in Target E. The graphite wheel is regularly exchanged and disposed as radioactive waste after a maximum of 3 to 4 years in operation, which corresponds to about 30 to 40 Ah of proton fluence. For disposal, the nuclide inventory of the long-lived isotopes (T1/2 > 60 d) has to be calculated and reported to the authorities. Measurements of gamma emitters, as well as 3H, 10Be and 14C, were carried out using different techniques. The measured specific activities are compared to Monte Carlo particle transport simulations performed with MCNPX2.7.0 using the BERTINI-DRESNER-RAL (default model in MCNPX2.7.0) and INCL4.6/ABLA07 as nuclear reaction models.

Textured carbon surfaces on copper by sputtering

NASA Technical Reports Server (NTRS)

Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

1986-01-01

A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

MEMS Gate Structures for Electric Propulsion Applications

DTIC Science & Technology

2006-07-12

distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es...minutes. A hot pressed boron nitride target (4N) in the hexagonal phase (h- BN) was sputtered in a RF magnetron sputtering gun. To promote the nucleation...and nanoFETs. This paper concludes with a discussion on using MEMS gates for dual -grid electron field emission applications. II. Gate Design I I

Growth of fullerene-like carbon nitride thin solid films consisting of cross-linked nano-onions

NASA Astrophysics Data System (ADS)

Czigány, Zs.; Brunell, I. F.; Neidhardt, J.; Hultman, L.; Suenaga, K.

2001-10-01

Fullerene-like CNx (x≈0.12) thin solid films were deposited by reactive magnetron sputtering of graphite in a nitrogen and argon discharge on cleaved NaCl and Si(001) substrates at 450 °C. As-deposited films consist of 5 nm diam CNx nano-onions with shell sizes corresponding to Goldberg polyhedra determined by high-resolution transmission electron microscopy. Electron energy loss spectroscopy revealed that N incorporation is higher in the core of the onions than at the perimeter. N incorporation promotes pentagon formation and provides reactive sites for interlinks between shells of the onions. A model is proposed for the formation of CNx nano-onions by continuous surface nucleation and growth of hemispherical shells.

Modeling carbonaceous particle formation in an argon graphite cathode dc discharge

NASA Astrophysics Data System (ADS)

Michau, A.; Lombardi, G.; Colina Delacqua, L.; Redolfi, M.; Arnas, C.; Bonnin, X.; Hassouni, K.

2010-12-01

We develop a model for the nucleation, growth and transport of carbonaceous dust particles in a non-reactive gas dc discharge where the carbon source is provided by cathode sputtering. We consider only the initial phase of the discharge when the dust charge density remains small with respect to the electron density. We find that an electric field reversal at the entrance of the negative glow region promotes trapping of negatively charged clusters and dust particles, confining them for long times in the plasma and favoring molecular growth. An essential ingredient for this process is electron attachment, which negatively charges the initially neutral clusters. We perform sensitivity studies on several number parameters: size of the largest molecular edifice, sticking coefficient, etc.

Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C; Gilmer, G; Zepeda-Ruiz, L

2007-05-04

The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, wemore » have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.« less

Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

NASA Astrophysics Data System (ADS)

Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

2015-04-01

The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

Microsputterer with integrated ion-drag focusing for additive manufacturing of thin, narrow conductive lines

NASA Astrophysics Data System (ADS)

Kornbluth, Y. S.; Mathews, R. H.; Parameswaran, L.; Racz, L. M.; Velásquez-García, L. F.

2018-04-01

We report the design, modelling, and proof-of-concept demonstration of a continuously fed, atmospheric-pressure microplasma metal sputterer that is capable of printing conductive lines narrower than the width of the target without the need for post-processing or lithographic patterning. Ion drag-induced focusing is harnessed to print narrow lines; the focusing mechanism is modelled via COMSOL Multiphysics simulations and validated with experiments. A microplasma sputter head with gold target is constructed and used to deposit imprints with minimum feature sizes as narrow as 9 µm, roughness as small as 55 nm, and electrical resistivity as low as 1.1 µΩ · m.

Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Takechi, Kazushige; Nakata, Mitsuru; Eguchi, Toshimasa; Otsuki, Shigeyoshi; Yamaguchi, Hirotaka; Kaneko, Setsuo

2008-09-01

We report on the effect of zinc oxide (ZnO) film deposition position on the characteristics of ZnO thin-film transistors (TFTs) fabricated by magnetron sputtering with no intentional heating of the substrate. We evaluate the properties of ZnO (channel semiconductor) films deposited at various positions with respect to the target position. We show that the film deposition at a position off-centered from the target results in good TFT characteristics. This might be due to the fact that the off-centered deposition position is effective for suppressing the effect of energetic negative ions in the plasma.

DLC coating on a micro-trench by bipolar PBII&D and analysis of plasma behaviour

NASA Astrophysics Data System (ADS)

Park, Wonsoon; Tokioka, Hideyuki; Tanaka, Masaaki; Choi, Junho

2014-08-01

Bipolar plasma-based ion implantation and deposition (bipolar PBII&D) has been recognized as a promising technique for coating deposition on complex three-dimensional targets. As the target is fully immersed in the plasma throughout the process, the plasma sheath can be formed with quite high conformability around the target. In this study, diamond-like carbon (DLC) coating was deposited on a micro-trench pattern by using bipolar PBII&D, and the structure of the DLC film across the overall surface region of the trench was examined by making use of their corresponding Raman spectra. The two types of negative high voltage pulses were applied to the targets for comparison: -0.5 and -15 kV. The scale of the micro-trench used in the study is much smaller than that of the plasma sheath produced under these negative voltages (about 1 cm and 14 cm for -0.5 kV and -15 kV, respectively). The plasma behaviour (i.e., ion flux, impact angle and energy) in the surrounding of the micro-trench was calculated with the particle-in-cell Monte Carlo collision method (PIC-MCCM). As a result, DLC film was successfully coated on the overall surface of the trench. When the applied negative voltage was -0.5 kV, the structure of DLC film coated on the sidewall of the trench became a more polymer-like carbon (PLC) than those of the top and bottom surfaces. This, as indicated by the simulation results, is because the ions, which strike the sidewall, tend to have less incident energy. Whereas in the case of -15 kV, the DLC film on the sidewall was a more graphite-like carbon (GLC) film, despite its smaller incident ion energy in comparison to those of the top and bottom surfaces. This phenomenon is attributed to the sputtering effect from the bottom surface of the trench, as evidenced by the plasma simulation.

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Purity of targets prepared on Cu substrates

NASA Astrophysics Data System (ADS)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Preparation and study of Titanium Nitride films by reactive sputtering and an investigation of target poisoning during the process

NASA Astrophysics Data System (ADS)

Aziz, Tareque; Rumaiz, Abdul

Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Grant E.; Moser, Trevor; Engelhard, Mark

About 40 years ago, it was shown that tungsten carbide exhibits similar catalytic behavior to Pt for certain commercially relevant reactions, thereby suggesting the possibility of cheaper and earth-abundant substitutes for costly and rare precious metal catalysts. In this work, reactive magnetron sputtering of Ta in the presence of three model hydrocarbons (2-butanol, heptane, and m-xylene) combined with gas aggregation and ion soft landing was employed to prepare organic-inorganic hybrid nanoparticles (NPs) on surfaces for evaluation of catalytic activity and durability. The electro-catalytic behavior of the NPs supported on glassy carbon was evaluated in acidic aqueous solution by cyclic voltammetry.more » The Ta-heptane and Ta-xylene NPs were revealed to be active and robust toward promotion of the oxygen reduction reaction, an important process occurring at the cathode in fuel cells. In comparison, pure Ta and Ta-butanol NPs were essentially unreactive. Characterization techniques including atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) were applied to probe how different sputtering conditions such as the flow rates of gases, sputtering current, and aggregation length affect the properties of the NPs. AFM images reveal the focused size of the NPs as well as their preferential binding along the step edges of graphite surfaces. In comparison, TEM images of the same NPs on carbon grids show that they bind randomly to the surface with some agglomeration but little coalescence. The TEM images also reveal morphologies with crystalline cores surrounded by amorphous regions for NPs formed in the presence of 2-butanol and heptane. In contrast, NPs formed in the presence of m-xylene are amorphous throughout. XPS spectra indicate that while the percentage of Ta, C, and O in the NPs varies depending on the sputtering conditions and hydrocarbon employed, the electron binding energies of the elements are similar for all of the NPs. The difference in reactivity between the NPs is attributed to their Ta/C ratios. Collectively, the findings presented herein indicate that reactive magnetron sputtering and gas aggregation combined with ion soft landing offer a promising physical approach for the synthesis of organic-inorganic hybrid NPs that have potential as low-cost durable substitutes for precious metals in catalysis« less

RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

NASA Astrophysics Data System (ADS)

Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

2017-08-01

A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

Particle-in-cell/Monte Carlo collisions treatment of an Ar/O2 magnetron discharge used for the reactive sputter deposition of TiOx films

NASA Astrophysics Data System (ADS)

Bultinck, E.; Bogaerts, A.

2009-10-01

The physical processes in an Ar/O2 magnetron discharge used for the reactive sputter deposition of TiOx thin films were simulated with a 2d3v particle-in-cell/Monte Carlo collisions (PIC/MCC) model. The plasma species taken into account are electrons, Ar+ ions, fast Arf atoms, metastable Arm* atoms, Ti+ ions, Ti atoms, O+ ions, O2+ ions, O- ions and O atoms. This model accounts for plasma-target interactions, such as secondary electron emission and target sputtering, and the effects of target poisoning. Furthermore, the deposition process is described by an analytical surface model. The influence of the O2/Ar gas ratio on the plasma potential and on the species densities and fluxes is investigated. Among others, it is shown that a higher O2 pressure causes the region of positive plasma potential and the O- density to be more spread, and the latter to decrease. On the other hand, the deposition rates of Ti and O are not much affected by the O2/Ar proportion. Indeed, the predicted stoichiometry of the deposited TiOx film approaches x=2 for nearly all the investigated O2/Ar proportions.

Electrical properties of thin film transistors with zinc tin oxide channel layer

NASA Astrophysics Data System (ADS)

Hong, Seunghwan; Oh, Gyujin; Kim, Eun Kyu

2017-10-01

We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 °C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm2/V·s, specific resistivity of about 2 × 102 Ω·cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm2/V·s and on-off ratio ( I on / I off ) of 104 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 °C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.

Texturing effects in molybdenum and aluminum nitride films correlated to energetic bombardment during sputter deposition

NASA Astrophysics Data System (ADS)

Drüsedau, T. P.; Koppenhagen, K.; Bläsing, J.; John, T.-M.

Molybdenum films sputter-deposited at low pressure show a (110) to (211) texture turnover with increasing film thickness, which is accompanied by a transition from a fiber texture to a mosaic-like texture. The degree of (002) texturing of sputtered aluminum nitride (AlN) films strongly depends on nitrogen pressure in Ar/N2 or in a pure N2 atmosphere. For the understanding of these phenomena, the power density at the substrate during sputter deposition was measured by a calorimetric method and normalized to the flux of deposited atoms. For the deposition of Mo films and various other elemental films, the results of the calorimetric measurements are well described by a model. This model takes into account the contributions of plasma irradiation, the heat of condensation and the kinetic energy of sputtered atoms and reflected Ar neutrals. The latter two were calculated by TRIM.SP Monte Carlo simulations. An empirical rule is established showing that the total energy input during sputter deposition is proportional to the ratio of target atomic mass to sputtering yield. For the special case of a circular planar magnetron the radial dependence of the Mo and Ar fluxes and related momentum components at the substrate were calculated. It is concluded that mainly the lateral inhomogeneous radial momentum component of the Mo atoms is the cause of the in-plane texturing. For AlN films, maximum (002) texturing appears at about 250 eV per atom energy input.

Graphite sample preparation for AMS in a high pressure and temperature press

USGS Publications Warehouse

Rubin, M.; Mysen, B.O.; Polach, H.

1984-01-01

A high pressure-high temperature press is used to make target material for accelerator mass spectrometry. Graphite was produced from typical 14C samples including oxalic acid and carbonates. Beam strength of 12C was generally adequate, but random radioactive contamination by 14C made age measurements impractical. ?? 1984.

Graphite sample preparation for AMS in a high pressure and temperature press

USGS Publications Warehouse

Rubin, Meyer; Mysen, Bjorn O.; Polach, Henry

1984-01-01

A high pressure-temperature press is used to make target material for accelerator mass spectrometry. Graphite was produced from typical **1**4C samples including oxalic acid and carbonates. Beam strength of **1**2C was generally adequate, but random radioactive contamination by **1**4C made age measurements impractical.

Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides

NASA Astrophysics Data System (ADS)

Spassov, D.; Paskaleva, A.; Fröhlich, K.; Ivanov, Tz

2017-01-01

The influence of the oxygen content in the dielectric layer and the effect of the bottom electrode on the resistive switching in Au/Pt/TaOx/TiN and Au/Pt/TaOx/Ta structures have been studied. The sputtered TaOx layers have been prepared by using oxygen concentrations of 10 or 7% O 2 in the Ar+O2 working ambient as well as by a gradual variation of the O2 content in the deposition process from 5 to 10%. Two deposition regimes for TiN electrodes have been investigated: reactive sputtering of Ti target in Ar+N2 ambient, and sputtering of TiN target in pure Ar. Bipolar resistive switching behavior is observed in all examined structures. It is demonstrated that the resistive switching effect is affected by the oxygen content in the working ambient as well as by the type and the deposition conditions of the bottom electrodes. Most stable effect, with ON/OFF ratio above 100 is obtained in TaOx deposited with variable O2 content in the ambient. The obtained switching voltage between the high resistive and low resistive state (SET) is about -1.5 V and the reverse changeover (RESET) is ∼2 V. A well pronounced resistive switching is achieved with reactively sputtered TiN while for the other bottom electrodes the effect is negligible.

Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

DOEpatents

Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

1997-12-02

Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

Research on laser-removal of a deuterium deposit from a graphite sample

NASA Astrophysics Data System (ADS)

Kubkowska, M.; Skladnik-Sadowska, E.; Malinowski, K.; Sadowski, M. J.; Rosinski, M.; Gasior, P.

2014-04-01

The paper presents experimental results of investigation of a removal of deuterium deposits from a graphite target by means of pulsed laser beams. The sample was a part of the TEXTOR limiter with a deuterium-deposited layer. That target was located in the vacuum chamber, pumped out to 5×10-5 Torr, and it was irradiated with a Nd:YAG laser, which generated 3.5-ns pulses of energy of 0.5 J at λ1 = 1063 nm, or 0.1 J at λ3 = 355 nm.

Effect of the target power density on high-power impulse magnetron sputtering of copper

NASA Astrophysics Data System (ADS)

Kozák, Tomáš

2012-04-01

We present a model analysis of high-power impulse magnetron sputtering of copper. We use a non-stationary global model based on the particle and energy conservation equations in two zones (the high density plasma ring above the target racetrack and the bulk plasma region), which makes it possible to calculate time evolutions of the averaged process gas and target material neutral and ion densities, as well as the fluxes of these particles to the target and substrate during a pulse period. We study the effect of the increasing target power density under conditions corresponding to a real experimental system. The calculated target current waveforms show a long steady state and are in good agreement with the experimental results. For an increasing target power density, an analysis of the particle densities shows a gradual transition to a metal dominated discharge plasma with an increasing degree of ionization of the depositing flux. The average fraction of target material ions in the total ion flux onto the substrate is more than 90% for average target power densities higher than 500 W cm-2 in a pulse. The average ionized fraction of target material atoms in the flux onto the substrate reaches 80% for a maximum average target power density of 3 kW cm-2 in a pulse.

Processing and property evaluation of tungsten-based mixed oxides for photovoltaics and optoelectronics

NASA Astrophysics Data System (ADS)

Vargas, Mirella

Tungsten Oxide (WO3) films and low-dimensional structures have proven to be promising candidates in the fields of photonics and electronics. WO3 is a well-established n-type semiconductor characterized by unique electrochromic behavior, an ideal optical band gap that permits transparency over a wide spectral range, and high chemical integrity. The plethora of diverse properties endow WO3 to be highly effective in applications related to electrochromism, gas sensing, and deriving economical energy. Compared to the bulk films, a materials system involving WO3 and a related species (elements or metal oxides) offer the opportunity to tailor the electrochromic response, and an overall enhancement of the physio-chemical and optical properties. In the present case, WO3 and TiO2 composite films have been fabricated by reactive magnetron sputtering employing W/Ti alloy targets, and individual W and Ti targets for co-sputtering. Composite WO3-TiO2 films were fabricated with variable chemical composition and the effect of variable bulk chemistry on film structure, surface/interface chemistry and chemical valence state of the W and Ti cations was investigated in detail. The process-property relationships between composition and physical properties for the films deposited by using W/Ti alloy targets of variable Ti content are associated with decreases in the deposition rate of the WO3-TiO2 films due to the lower sputter yield of the strongly bonded TiO2 formed on the target surface. Additionally, for the co-sputtered films using variable tungsten power, the optical properties demonstrate unique optical modulation. The changes associated with the physical color of the films demonstrate the potential to tailor the optical behavior for the design and fabrication of multilayer photovoltaic and catalytic devices. The process-structure-property correlation derived in this work will provide a road-map to optimize and produce W-Ti-O thin films with desired properties for a given technological application.

Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

NASA Astrophysics Data System (ADS)

Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

2016-10-01

Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goto, Tetsuya; Matsuoka, Takaaki; Ohmi, Tadahiro

Novel magnetron-sputtering equipment, called rotation magnet sputtering (ROT-MS), was developed to overcome various disadvantages of current magnetron-sputtering equipment. Disadvantages include (1) very low target utilization of less than 20%, (2) difficulty in obtaining uniform deposition on the substrate, and (3) charge-up damages and ion-bombardment-induced damages resulting from very high electron temperature (>3 eV) and that the substrate is set at the plasma excitation region. In ROT-MS, a number of moving high-density plasma loops are excited on the target surface by rotating helical magnets, resulting in very high target utilization with uniform target erosion and uniform deposition on the substrate. Thismore » excellent performance can be principally maintained even if equipment size increases for very large-substrate deposition. Because strong horizontal magnetic fields (>0.05 T) are produced within a very limited region just at the target surface, very low electron-temperature plasmas (<2.5 eV for Ar plasma and <1 eV for direct-current-excited Xe plasma) are excited at the very limited region adjacent to the target surface with a combination of grounded plate closely mounted on the strong magnetic field region. Consequently, the authors can establish charge-up damage-free and ion-bombardment-induced damage-free processes. ROT-MS has been applied for thin-film formation of LaB{sub 6}, which is well known as a stable, low-work-function bulk-crystal material for electron emissions. The work function of the LaB{sub 6} film decreased to 2.8 eV due to enhanced (100)-orientation crystallinity and reduced resistivity realized by adjusting the flux of low-energy bombarding ions impinging on the depositing surface, which work very efficiently, improving the performance of the electron emission devices.« less

Neutral beam dose and sputtering characteristics in an ion implantation system

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

1973-01-01

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Sputtering and detection of large organic molecules from Europa

NASA Astrophysics Data System (ADS)

Johnson, R. E.; Sundqvist, B. U. R.

2018-07-01

Mass spectroscopy of bio-molecules by heavy ion induced sputtering, which became a practical laboratory procedure, was also suggested as a potential tool for spacecraft studies of targets of interest in astrobiology. With the planning of new missions to Europa, there is renewed interest in the possibility of detecting organic molecules that might have originated in its subsurface ocean and can be sputtered from its surface often intact by impacting energetic heavy ions trapped in Jupiter's magnetosphere. Here we review the laboratory data and modeling bearing on this issue. We then give estimates of the ejection into the gas-phase of trace organic species embedded in an ice matrix on Europa's surface and their possible detection during a flyby mission.

Effect of sputtering power on MgF2 thin films deposited by sputtering technique under fluorine trapping

NASA Astrophysics Data System (ADS)

De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Prathap, C.; Rao, K. Divakar; Sahoo, N. K.

2016-05-01

A non-conventional magnetron sputtering technique was explored to deposit magnesium fluoride thin films using the concept of fluorine gas trapping without the introduction of additional fluorine gas flow inside the chamber. The effect of magnetron power from 50 W to 250 W has been explored on structural, optical and physical properties of the samples. Polycrystalline nature with tetragonal crystallinity of the films has been confirmed by GIXRD measurements along with thickness dependency. Monotonic increase of attenuation coefficient (k) with RF power has been explained in terms of target compound dissociation probability. In conclusion, with fluorine trapping method, the samples deposited at lower RF powers (<100 W) are found to be more suitable for optical applications.

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

PubMed Central

Wang, Qun; Jin, Xin

2018-01-01

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency. PMID:29562603

Effect of post annealing on structural, optical and dielectric properties of MgTiO3 thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Santhosh Kumar, T.; Bhuyan, R. K.; Pamu, D.

2013-01-01

MgTiO3 (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO2/SiO2/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3bar space group with lattice parameters a = b = 5.0557(12) Å, c = 13.9003(9) Å. The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 °C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the refractive index and bandgap upon annealing can be attributed to the improvement in packing density, crystallinity, and decrease in porosity ratio. Both the dielectric constant and tan δ decrease with the increase in frequency and were in the range of 13.7-31.11 and 0.006-0.124, respectively. The improvement in dielectric properties with the increase in OMP has been correlated to the reduction in oxygen vacancies, increase in crystallinity and grain size of the films.

A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1- x O2 Gate dielectric and improved electrical and hysteresis performance

NASA Astrophysics Data System (ADS)

Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

2017-04-01

The use of co-sputtered zirconium silicon oxide (Zr x Si1- x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0-150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1- x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V-1 s-1).

Frictional and morphological properties of Au-MoS2 films sputtered from a compact target

NASA Technical Reports Server (NTRS)

Spalvins, T.

1984-01-01

AuMoS2 films 0.02 to 1.2 microns thick were sputtered from target compacted from 5 wt % Au + 95 wt % MoS2, to investigate the frictional and morphological film growth characteristics. The gold dispersion effects in MoS2 films are of interest to increase the densitification and strengthening of the film structure. Three microstructural growth stages were identified on the nano-micro-macrostructural level. During sliding both sputtered Au-MoS2 and MoS2 films have a tendency to break within the columner region. The remaining or effective film, about 0.2 microns thick, performs the lubrication. The Au-MoS2 films displayed a lower friction coefficient with a high degree of frictional stability and less wear debris generation as compared to pure MoS2 films. The more favorable frictional characteristics of the Au-MoS2 films are attributed to the effective film thickness and the high density packed columner zone which has a reduced effect on the fragmentation of the tapered crystallites during fracture.

Heated probe diagnostic inside of the gas aggregation nanocluster source

NASA Astrophysics Data System (ADS)

Kolpakova, Anna; Shelemin, Artem; Kousal, Jaroslav; Kudrna, Pavel; Tichy, Milan; Biederman, Hynek; Surface; Plasma Science Team

2016-09-01

Gas aggregation cluster sources (GAS) usually operate outside common working conditions of most magnetrons and the size of nanoparticles created in GAS is below that commonly studied in dusty plasmas. Therefore, experimental data obtained inside the GAS are important for better understanding of process of nanoparticles formation. In order to study the conditions inside the gas aggregation chamber, special ``diagnostic GAS'' has been constructed. It allows simultaneous monitoring (or spatial profiling) by means of optical emission spectroscopy, mass spectrometry and probe diagnostic. Data obtained from Langmuir and heated probes map the plasma parameters in two dimensions - radial and axial. Titanium has been studied as an example of metal for which the reactive gas in the chamber starts nanoparticles production. Three basic situations were investigated: sputtering from clean titanium target in argon, sputtering from partially pre-oxidized target and sputtering with oxygen introduced into the discharge. It was found that during formation of nanoparticles the plasma parameters differ strongly from the situation without nanoparticles. These experimental data will support the efforts of more realistic modeling of the process. Czech Science Foundation 15-00863S.

Beneficial effect of Cu on Ti-Nb-Ta-Zr sputtered uniform/adhesive gum films accelerating bacterial inactivation under indoor visible light.

PubMed

Alhussein, Akram; Achache, Sofiane; Deturche, Regis; Sanchette, Frederic; Pulgarin, Cesar; Kiwi, John; Rtimi, Sami

2017-04-01

This article presents the evidence for the significant effect of copper accelerating the bacterial inactivation on Ti-Nb-Ta-Zr (TNTZ) sputtered films on glass up to a Cu content of 8.3 at.%. These films were deposited by dc magnetron co-sputtering of an alloy target Ti-23Nb-0.7Ta-2Zr (at.%) and a Cu target. The fastest bacterial inactivation of E. coli on this later TNTZ-Cu surface proceeded within ∼75min. The films deposited by magnetron sputtering are chemically homogenous. The film roughness evaluated by atomic force spectroscopy (AFM) on the TNTZ-Cu 8.3 at.% Cu sample presented an RMS-value of 20.1nm being the highest RMS of any Cu-sputtered TNTZ sample. The implication of the RMS value found for this sample leading to the fastest interfacial bacterial inactivation kinetics is also discussed. Values for the Young's modulus and hardness are reported for the TNTZ films in the presence of various Cu-contents. Evaluation of the bacterial inactivation kinetics of E. coli under low intensity actinic hospital light and in the dark was carried out. The stable repetitive bacterial inactivation was consistent with the extremely low Cu-ion release from the samples of 0.4 ppb. Evidence is presented by the bacterial inactivation dependence on the applied light intensity for the intervention of Cu as semiconductor CuO during the bacterial inactivation at the TNTZ-Cu interface. The mechanism of CuO-intervention under light is suggested based on the pH/and potential changes registered during bacterial disinfection. Copyright © 2017 Elsevier B.V. All rights reserved.

Global modelling of plasma-wall interaction in reversed field pinches

NASA Astrophysics Data System (ADS)

Bagatin, M.; Costa, S.; Ortolani, S.

1989-04-01

The impurity production and deuterium recycling mechanisms in ETA—BETA II and RFX are firstly discussed by means of a simple model applicable to a stationary plasma interacting with the wall. This gives the time constant and the saturation values of the impurity concentration as a function of the boundary temperature and density. If the latter is sufficiently high, the impurity buildup in the main plasma becomes to some extent stabilized by the shielding effect of the edge. A self-consistent global model of the time evolution of an RFP plasma interacting with the wall is then described. The bulk and edge parameters are derived by solving the energy and particle balance equations incorporating some of the basic plasma-surface processes, such as sputtering, backscattering and desorption. The application of the model to ETA-BETA II confirms the impurity concentrations of the light and metal impurities as well as the time evolution of the average electron density found experimentally under different conditions. The model is then applied to RFX, a larger RFP experiment under construction, whose wall will be protected by a full graphite armour. The time evolution of the discharge shows that carbon sputtering could increase Zeff to ~ 4, but without affecting significantly the plasma performance.

Characteristic of the carbon-tungsten co-deposition layers prepared by RF magnetron sputtering in a D2/Ar plasma

NASA Astrophysics Data System (ADS)

Tang, X. H.; Zhang, W. Z.; Shi, L. Q.; Qi, Q.; Zhang, B.; Zhang, W. Y.; Wang, K.; Hu, J. S.

2013-06-01

A C-W co-deposition layer, formed by radio frequency magnetron sputtering, was investigated to identify the characteristics of C-W mixed layers in fusion experimental reactors. The layers were characterized by ion beam analysis, Raman spectroscopy, X-ray diffraction and scanning electron microscopy. It was found that D atoms in C-W layers were mainly trapped by the C atoms. The ratio of C/W and D concentrations in the C-W layers deposited at a pressure of 5.0 Pa and a fixed flow rate ratio were 54/31 and 5%, respectively. They all increased significantly with increased flow rate of D2 but decreased with temperature at a relatively low level. The pressure dependence of the D concentration showed a maximum value around 5 Pa and it decreased with rising or decreasing pressure. Both Raman and X-ray analysis revealed that the structure of the C-W layers became more graphite-like with increasing temperature. Moreover, deuterium introduction made the tungsten carbide phase disappear in the deuterated C-W layers. Only erosion caves on the surface of the sample prepared at 300 K were observed by SEM. When the temperature increased, they disappeared, and convex bodies appeared.

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1986-01-01

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics

NASA Astrophysics Data System (ADS)

Layes, Vincent; Monje, Sascha; Corbella, Carles; Schulz-von der Gathen, Volker; von Keudell, Achim; de los Arcos, Teresa

2017-05-01

In-vacuum characterization of magnetron targets after High Power Impulse Magnetron Sputtering (HiPIMS) has been performed by X-ray photoelectron spectroscopy (XPS). Al-Cr composite targets (circular, 50 mm diameter) mounted in two different geometries were investigated: an Al target with a small Cr disk embedded at the racetrack position and a Cr target with a small Al disk embedded at the racetrack position. The HiPIMS discharge and the target surface composition were characterized in parallel for low, intermediate, and high power conditions, thus covering both the Ar-dominated and the metal-dominated HiPIMS regimes. The HiPIMS plasma was investigated using optical emission spectroscopy and fast imaging using a CCD camera; the spatially resolved XPS surface characterization was performed after in-vacuum transfer of the magnetron target to the XPS chamber. This parallel evaluation showed that (i) target redeposition of sputtered species was markedly more effective for Cr atoms than for Al atoms; (ii) oxidation at the target racetrack was observed even though the discharge ran in pure Ar gas without O2 admixture, the oxidation depended on the discharge power and target composition; and (iii) a bright emission spot fixed on top of the inserted Cr disk appeared for high power conditions.

Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-10-01

We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Deposition and characterization of vanadium oxide based thin films for MOS device applications

NASA Astrophysics Data System (ADS)

Rakshit, Abhishek; Biswas, Debaleen; Chakraborty, Supratic

2018-04-01

Vanadium Oxide films are deposited on Si (100) substrate by reactive RF-sputtering of a pure Vanadium metallic target in an Argon-Oxygen plasma environment. The ratio of partial pressures of Argon to Oxygen in the sputtering-chamber is varied by controlling their respective flow rates and the resultant oxide films are obtained. MOS Capacitor based devices are then fabricated using the deposited oxide films. High frequency Capacitance-Voltage (C-V) and gate current-gate voltage (I-V) measurements reveal a significant dependence of electrical characteristics of the deposited films on their sputtering deposition parameters mainly, the relative content of Argon/Oxygen in the plasma chamber. A noteworthy change in the electrical properties is observed for the films deposited under higher relative oxygen content in the plasma atmosphere. Our results show that reactive sputtering serves as an indispensable deposition-setup for fabricating vanadium oxide based MOS devices tailor-made for Non-Volatile Memory (NVM) applications.

Effect of rapid thermal annealing on the electrical, optical and structural properties of ZnO-doped In2O3 films grown by linear facing target sputtering.

PubMed

Cho, Chung-Ki; Kim, Han-Ki

2012-04-01

We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2, flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.

JPRS Report, Science & Technology, Japan, SOR Technology Update

DTIC Science & Technology

1990-12-18

GUN Electron gun c3 GV Gate valve R- ± HL Helmholtz coil IG Ion vacuum gauge IP Ion pump KFC Klystron focusing coil KLY Klystron PB Pre-buncher Q...Therefore, we started studying the manufacture of this kind of film. Recently, such films have been placed on the market as test samples by some foreign... Mixing of sputtered particles from the two targets can also be prevented by making the structure of the bulkhead in the sputtering chamber most

Effect of structure and deposition technology on tribological properties of DLC coatings alloyed with VIA group metals

NASA Astrophysics Data System (ADS)

Khrushchov, M.; Levin, I.; Marchenko, E.; Avdyukhina, V.; Petrzhik, M.

2016-07-01

The results of a comprehensive research on atomic structure, phase composition, micromechanical and tribological characteristics of alloyed DLC coatings have been presented. The coatings have been deposited by reactive magnetron sputtering in acetylene-nitrogen gas mixtures of different compositions (a-C:H:Cr), by plasma-assisted chemical vapor deposition in atmospheres of silicone-organic precursor gases (a-C:H:Mo:Si), and by nonreactive magnetron sputtering of a composite target (a-C:H:W).

Enhanced saturation of sputtered amorphous SiN film frameworks using He- and Ne-Penning effects

NASA Astrophysics Data System (ADS)

Sugimoto, Iwao; Nakano, Satoko; Kuwano, Hiroki

1994-06-01

Optical emission spectroscopy reveals that helium and neon gases enhance the nitridation reactivity of the nitrogen plasma by Penning effects during magnetron sputtering of the silicon target. These excited nitrogen plasmas promote the saturation of frameworks of the resultant silicon nitride films. X-ray photoelectron spectroscopy, electron spin resonance, and x-ray diffraction analyses provide insight into the structure of these films, and thermal desorption mass spectroscopy reveals the behavior of volatile species in these films.

Rapid evaluation of ion thruster lifetime using optical emission spectroscopy

NASA Technical Reports Server (NTRS)

Rock, B. A.; Mantenieks, M. A.; Parsons, M. L.

1985-01-01

A major life-limiting phenomenon of electric thrusters is the sputter erosion of discharge chamber components. Thrusters for space propulsion are required to operate for extended periods of time, usually in excess of 10,000 hr. Lengthy and very costly life-tests in high-vacuum facilities have been required in the past to determine the erosion rates of thruster components. Alternative methods for determining erosion rates which can be performed in relatively short periods of time at considerably lower costs are studied. An attempt to relate optical emission intensity from an ion bombarded surface (screen grid) to the sputtering rate of that surface is made. The model used a kinetic steady-state (KSS) approach, balancing the rates of population and depopulation of ten low-lying excited states of the sputtered molybdenum atom (MoI) with those of the ground state to relate the spectral intensities of the various transitions of the MoI to the population densities. Once this is accomplished, the population density can be related to the sputtering rate of the target. Radiative and collisional modes of excitation and decay are considered. Since actual data has not been published for MoI excitation rate and decay constants, semiempirical equations are used. The calculated sputtering rate and intensity is compared to the measured intensity and sputtering rates of the 8 and 30 cm ion thrusters.

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications.

PubMed

Vijayaraghavan, Rajani K; Gaman, Cezar; Jose, Bincy; McCoy, Anthony P; Cafolla, Tony; McNally, Patrick J; Daniels, Stephen

2016-02-01

We demonstrate the growth of multilayer and single-layer graphene on copper foil using bipolar pulsed direct current (DC) magnetron sputtering of a graphite target in pure argon atmosphere. Single-layer graphene (SG) and few-layer graphene (FLG) films are deposited at temperatures ranging from 700 °C to 920 °C within <30 min. We find that the deposition and post-deposition annealing temperatures influence the layer thickness and quality of the graphene films formed. The films were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical transmission spectroscopy techniques. Based on the above studies, a diffusion-controlled mechanism was proposed for the graphene growth. A single-step whole blood assay was used to investigate the anticoagulant activity of graphene surfaces. Platelet adhesion, activation, and morphological changes on the graphene/glass surfaces, compared to bare glass, were analyzed using fluorescence microscopy and SEM techniques. We have found significant suppression of the platelet adhesion, activation, and aggregation on the graphene-covered surfaces, compared to the bare glass, indicating the anticoagulant activity of the deposited graphene films. Our production technique represents an industrially relevant method for the growth of SG and FLG for various applications including the biomedical field.

Enhanced Tribocorrosion Performance of Cr/GLC Multilayered Films for Marine Protective Application.

PubMed

Li, Lei; Liu, Lin-Lin; Li, Xiaowei; Guo, Peng; Ke, Peiling; Wang, Aiying

2018-04-18

The corrosion and tribology are all closely related to the interface/surface of materials, which are extremely important for the mechanical components used in harsh marine environments. In this work, we fabricated Cr/graphite-like carbon (GLC) multilayered films with different modulation periods on the 316L stainless steels by direct current magnetron sputtering. Tribocorrosion tests in artificial seawater show that the tribocorrosion resistance of the Cr/GLC films is improved as the modulation period decreases from 1000 to 333 nm and then drastically drops with further decreasing to 250 nm. By taking a top-layer thickening strategy for the Cr/GLC film with 250 nm modulation period, the tribocorrosion performance is significantly enhanced. The corresponded mechanisms are discussed in terms of the film structure and electrochemical corrosion behavior.

Angular distribution of hybridization in sputtered carbon thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Wang, H.; Wei, Z. C.

2017-08-01

The sp3/sp2 ratio of sputtered carbon thin film depends on the ion bombardment process and tailors the physical properties of carbon thin film. In present work, we report the angular distribution of hybridization in magnetron sputtered carbon thin film for the first time. By x-ray photoelectron spectra analyses, it is found that the sp3/sp2 ratio increases linearly with increasing the deposition angle from 0 to 90 degree, which could be attributed to the enhancement of direct knocking-out of near-surface target atoms. In addition, we also derive the sp3/sp2 ratio by simulation on complex permittivity in terahertz frequency using a modified percolation approximation tunneling model. Those derived data consist with the results from x-ray photoelectron spectroscopy.

Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Dissanayake, A.; AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Taibu, R.; Tecos, G.; Hamdan, N. M.; Kayani, A.

2011-06-01

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 °C in vacuum.

Application of ESCA to the determination of stoichiometry in sputtered coatings and interface regions

NASA Technical Reports Server (NTRS)

Wheeler, D. R.

1978-01-01

X-ray photoelectron spectroscopy was used to characterize radiofrequency sputter deposited films of several refractory compounds. Both the bulk film properties such as purity and stoichiometry and the character of the interfacial region between the film and substrate were examined. The materials were CrB2, MoS2, Mo2C, and Mo2B5 deposited on 440C steel. It was found that oxygen from the sputtering target was the primary impurity in all cases. Biasing improves the film purity. The effect of biasing on film stoichiometry is different for each compound. Comparison of the interfacial composition with friction data suggests that adhesion of these films is improved if a region of mixed film and iron oxides can be formed.

Microstructures and properties of superconducting Y-ErBaCuO thin films obtained from disordered Y-ErBaF2Cu films

NASA Technical Reports Server (NTRS)

Cikmach, P.; Diociaiuti, M.; Fontana, A.; Giovannella, C.; Iannuzzi, M.; Lucchini, C.; Merlo, V.; Messi, R.; Paoluzi, L.; Scopa, L.

1991-01-01

The preparation procedure used to obtain superconducting thin films by radio frequency magnetron sputtering of a single mosaic target is described in detail. The single mosaic target is composed of (Y-Er), BaF2, and Cu.

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

NASA Astrophysics Data System (ADS)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

Co-sputtered amorphous Ge-Sb-Se thin films: optical properties and structure

NASA Astrophysics Data System (ADS)

Halenkovič, Tomáš; Němec, Petr; Gutwirth, Jan; Baudet, Emeline; Specht, Marion; Gueguen, Yann; Sangleboeuf, J.-C.; Nazabal, Virginie

2017-05-01

The unique properties of amorphous chalcogenides such as wide transparency in the infrared region, low phonon energy, photosensitivity and high linear and nonlinear refractive index, make them prospective materials for photonics devices. The important question is whether the chalcogenides are stable enough or how the photosensitivity could be exacerbated for demanded applications. Of this view, the Ge-Sb-Se system is undoubtedly an interesting glassy system given the antinomic behavior of germanium and antimony with respect to photosensitivity. The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. Radio-frequency sputtering is widely used for film fabrication due to its relative simplicity, easy control, and often stoichiometric material transfer from target to substrate. The advantage of this technique is the ability to explore a wide range of chalcogenide film composition by means of adjusting the contribution of each target. This makes the technique considerably effective for the exploration of properties mentioned above. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy Egopt was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy. The films structure was determined using Raman scattering spectroscopy.

Integrated arc suppression unit for defect reduction in PVD applications

NASA Astrophysics Data System (ADS)

Li, Jason; Narasimhan, Murali K.; Pavate, Vikram; Loo, David; Rosenblum, Steve; Trubell, Larry; Scholl, Richard; Seamons, Scott; Hagerty, Chris; Ramaswami, Sesh

1997-09-01

Arcing between the target and plasma during PVD deposition causes substantial damage to the target and splats and other contamination on the deposited films. Arc-related damages and defects are frequently encountered in microelectronics manufacturing and contributes largely to reduced wafer yields. Arcing is caused largely by the charge buildup at the contaminated sites on the target surface that contains either nonconducting inclusions or nodules. Arc suppression is a key issue for defect reduction, yield improvement and for reliable high quality metallization. An Integrated Arc Suppression Unit (IASU) has been designed for Endura HP PVDTM sputtering sources. The integrated design reduces cable length from unit to source and reduces electrical energy stored in the cable. Active arc handling mode, proactive arc prevention mode, and passive by-pass arc counting mode are incorporated into the same unit. The active mode is designed to quickly respond to chamber conditions, like a large chamber voltage drop, that signals a arc. The self run mode is designed to proactively prevent arc formation by pulsing and reversing target voltage at 50 kHz. The design of the IASU, also called mini small package arc repression circuit--low energy unit (mini Sparc-le), has been optimized for various DC magnetron sources, plasma stability, chamber impedance, power matching, CE MARK test, and power dissipation. Process characterization with Ti, TiN and Al sputtering indicates that the unit has little adverse impact on film properties. Mini Sparc-le unit has been shown here to significantly reduce splats occurrence in Al sputtering. Marathon test of the unit with Ti/TiN test demonstrated the unit's reliability and its ability to reduce sensitivity of defects to target characteristics.

CIGS thin film solar cell prepared by reactive co-sputtering

NASA Astrophysics Data System (ADS)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Particle production of a graphite target system for the intensity frontier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, X.; Kirk, H.; McDonald, K. T.

2015-05-03

A solid graphite target system is considered for an intense muon and/or neutrino source in support of physics at the intensity frontier. We previously optimized the geometric parameters of the beam and target to maximize particle production at low energies by incoming protons with kinetic energy of 6.75 GeV and an rms geometric emittance of 5 mm-mrad using the MARS15(2014) code. In this study, we ran MARS15 with ROOT-based geometry and also considered a mercury-jet target as an upgrade option. The optimization was extended to focused proton beams with transverse emittances from 5 to 50 mm-mrad, showing that the particlemore » production decreases slowly with increasing emittance. We also studied beam-dump configurations to suppress the rate of undesirable high-energy secondary particles in the beam.« less

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

NASA Astrophysics Data System (ADS)

Feder, R.; Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B.

2013-12-01

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done.A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the high-energetic maxima in the energy distribution of the backscattered primary ions, a deviation between simulated and measured data was found, most likely originating in a higher energy loss under experimental conditions than considered in the simulation.

Origin of the butterfly-shaped magnetoresistance in reactive sputtered epitaxial Fe{sub 3}O{sub 4} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, P.; Zhang, L. T.; Mi, W. B.

2009-08-01

Epitaxial Fe{sub 3}O{sub 4} thin films were synthesized by facing-target reactive sputtering Fe targets. The epitaxy of the Fe{sub 3}O{sub 4} film on MgO (100) was examined macroscopically using x-ray diffraction, including conventional theta-2theta scan, tilting 2theta scan, phi scan, and pole figure. The observed low-field butterfly-shaped magnetoresistance (MR) are explained by the primary fast rotation of the spins far away from antiphase boundaries and the high-field MR changing linearly with magnetic field can be understood by the gradual rotation of the spins near the antiphase boundaries. It is magnetocrystalline anisotropy that causes an increase in MR below Verwey transitionmore » temperature.« less

Optimization of process parameters for RF sputter deposition of tin-nitride thin-films

NASA Astrophysics Data System (ADS)

Jangid, Teena; Rao, G. Mohan

2018-05-01

Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

2011-11-01

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Quantitative comparisons between experimentally measured 2D carbon radiation and Monte Carlo impurity (MCI) code simulations

NASA Astrophysics Data System (ADS)

Evans, T. E.; Finkenthal, D. F.; Fenstermacher, M. E.; Leonard, A. W.; Porter, G. D.; West, W. P.

Experimentally measured carbon line emissions and total radiated power distributions from the DIII-D divertor and scrape-off layer (SOL) are compared to those calculated with the Monte Carlo impurity (MCI) model. A UEDGE [T.D. Rognlien et al., J. Nucl. Mater. 196-198 (1992) 347] background plasma is used in MCI with the Roth and Garcia-Rosales (RG-R) chemical sputtering model [J. Roth, C. García-Rosales, Nucl. Fusion 36 (1992) 196] and/or one of six physical sputtering models. While results from these simulations do not reproduce all of the features seen in the experimentally measured radiation patterns, the total radiated power calculated in MCI is in relatively good agreement with that measured by the DIII-D bolometric system when the Smith78 [D.L. Smith, J. Nucl. Mater. 75 (1978) 20] physical sputtering model is coupled to RG-R chemical sputtering in an unaltered UEDGE plasma. Alternatively, MCI simulations done with UEDGE background ion temperatures along the divertor target plates adjusted to better match those measured in the experiment resulted in three physical sputtering models which when coupled to the RG-R model gave a total radiated power that was within 10% of measured value.

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications.

PubMed

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-22

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

NASA Astrophysics Data System (ADS)

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.

Here, we demonstrate mobilities of >45 cm 2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2, instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2O 3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discoveredmore » for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO 2. The addition of ZrO 2 yielded the highest mobilities at >55 cm 2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

PubMed Central

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-01-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows. PMID:27653830

Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

DOE PAGES

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; ...

2016-01-19

Here, we demonstrate mobilities of >45 cm 2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2, instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2O 3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discoveredmore » for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO 2. The addition of ZrO 2 yielded the highest mobilities at >55 cm 2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

NASA Astrophysics Data System (ADS)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

NASA Astrophysics Data System (ADS)

Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

2014-08-01

Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

Computer simulation of sputtering induced by swift heavy ions

NASA Astrophysics Data System (ADS)

Kucharczyk, P.; Füngerlings, A.; Weidtmann, B.; Wucher, A.

2018-07-01

New experimental results regarding the mass and charge state distribution of material sputtered under irradiation with swift heavy ions suggest fundamental differences between the ejection mechanisms under electronic and nuclear sputtering conditions. In order to illustrate the difference, computer simulations based on molecular dynamics were performed to model the surface ejection process of atoms and molecules induced by a swift heavy ion track. In a first approach, the track is homogeneously energized by assigning a fixed energy to each atom with randomly oriented direction of motion within a cylinder of a given radius around the projectile ion trace. The remainder of the target crystal is assumed to be at rest, and the resulting lattice dynamics is followed by molecular dynamics. The resulting sputter yield is calculated as a function of track radius and energy and compared to corresponding experimental data in order to find realistic values for the effective deposited lattice energy density. The sputtered material is analyzed with respect to emission angle and energy as well as depth of origin. The results are compared to corresponding data from keV sputter simulations. As a second step of complexity, the homogeneous and monoenergetic lattice energization is replaced by a starting energy distribution described by a local lattice temperature. As a first attempt, the respective temperature is assumed constant within the track, and the results are compared with those obtained from monoenergetic energization with the same average energy per atom.

Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

NASA Astrophysics Data System (ADS)

Greczynski, Grzegorz

2016-09-01

High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic heavy-metal ions to densify the dilute TiTaN and/or TiAlTaN alloys. No external heating is used and the substrate temperature does not exceed 120 °C. This development allows for widening the application range of hard TM nitride coatings to new classes of technologically-relevant temperature-sensitive substrates, such as components made by plastics, glasses, aluminum alloys, and tempered steels. Author wants to acknowledge the financial support from VINN Excellence Center Functional Nanoscale Materials (FunMat) Grant 2005 02666.

Sputter deposited titanium disilicide at high substrate temperatures

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.; Lajos, R.

1984-08-01

Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on <111> bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

Synthesis and characterization of SiC based composite materials for immobilizing radioactive graphite

NASA Astrophysics Data System (ADS)

Wang, Qing; Teng, Yuancheng; Wu, Lang; Zhang, Kuibao; Zhao, Xiaofeng; Hu, Zhuang

2018-06-01

In order to immobilize high-level radioactive graphite, silicon carbide based composite materials{ (1-x) SiC· x MgAl2O4 (0.1 ≤ x≤0.4) } were fabricated by solid-state reaction at 1370 °C for 2 h in vacuum. Residual graphite and precipitated corundum were observed in the as-synthesized product, which attributed to the interface reaction of element silicon and magnesium compounds. To further understand the reasons for the presence of graphite and corundum, the effects of mole ratio of Si/C, MgAl2O4 content and non-stoichiometry of MgAl2O4 on the synthesis were investigated. To immobilize graphite better, residual graphite should be eliminated. The target product was obtained when the mole ratio of Si/C was 1.3:1, MgAl2O4 content was x = 0.2, and the mole ratio of Al to Mg in non-stoichiometric MgAl2O4 was 1.7:1. In addition, the interface reaction between magnesium compounds and silicon not graphite was displayed by conducting a series of comparative experiments. The key factor for the occurrence of interface reaction is that oxygen atom is transferred from magnesium compound to SiO gas. Infrared and Raman spectrum revealed the increased disorders of graphite after being synthesized.

Reduced atomic shadowing in HiPIMS: Role of the thermalized metal ions

NASA Astrophysics Data System (ADS)

Oliveira, João Carlos; Ferreira, Fábio; Anders, André; Cavaleiro, Albano

2018-03-01

In magnetron sputtering, the ability to tailor film properties depends primarily on the control of the flux of particles impinging on the growing film. Among deposition mechanisms, the shadowing effect leads to the formation of a rough surface and a porous, columnar microstructure. Re-sputtered species may be re-deposited in the valleys of the films surface and thereby contribute to a reduction of roughness and to fill the underdense regions. Both effects are non-local and they directly compete to shape the final properties of the deposited films. Additional control of the bombarding flux can be obtained by ionizing the sputtered flux, because ions can be controlled with respect to their energy and impinging direction, such as in High-Power Impulse Magnetron Sputtering (HiPIMS). In this work, the relation between ionization of the sputtered species and thin film properties is investigated in order to identify the mechanisms which effectively influence the shadowing effect in Deep Oscillation Magnetron Sputtering (DOMS), a variant of HiPIMS. The properties of two Cr films deposited using the same averaged target power by d.c. magnetron sputtering and DOMS have been compared. Additionally, the angle distribution of the Cr species impinging on the substrate was simulated using Monte Carlo-based programs while the energy distribution of the energetic particles bombarding the substrate was evaluated by energy-resolved mass analysis. It was found that the acceleration of the thermalized chromium ions at the substrate sheath in DOMS significantly reduces the high angle component of their impinging angle distribution and, thus, efficiently reduces atomic shadowing. Therefore, a high degree of ionization in HiPIMS results in almost shadowing effect-free film deposition and allows us to deposit dense and compact films without the need of high energy particle bombardment during growth.

The effects of changing deposition conditions on the similarity of sputter-deposited fluorocarbon thin films to bulk PTFE

NASA Astrophysics Data System (ADS)

Zandona, Philip

Solid lubrication of space-borne mechanical components is essential to their survival and the continued human exploration of space. Recent discoveries have shown that PTFE when blended with alumina nanofillers exhibits greatly improved physical performance properties, with wear rates being reduced by several orders of magnitude. The bulk processes used to produce the PTFE-alumina blends are limiting. Co-sputter deposition of PTFE and a filler material overcomes several of these limitations by enabling the reduction of particle size to the atomic level and also by allowing for the even coating of the solid lubricant on relatively large areas and components. The goal of this study was to establish a baseline performance of the sputtered PTFE films as compared to the bulk material, and to establish deposition conditions that would result in the most bulk-like film possible. In order to coax change in the structure of the sputtered films, sputtering power and deposition temperature were increased independently. Further, post-deposition annealing was applied to half of the deposited film in an attempt to affect change in the film structure. Complications in the characterization process due to increasing film thickness were also examined. Bulk-like metrics for characterization processes the included Fourier transform infrared spectroscopy (FTIR), X-ray spectroscopy (XPS), nanoindentation via atomic force microscopy, and contact angle of water on surface measurements were established. The results of the study revealed that increasing sputtering power and deposition temperature resulted in an increase in the similarity between the fluorocarbon films and the bulk PTFE, at a cost of affecting the potential of the film thicknesses, either by affecting the deposition process directly, or by decreasing the longevity of the sputtering targets.

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

NASA Astrophysics Data System (ADS)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

2013-10-01

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

Dynamics of nanoparticle morphology under low energy ion irradiation.

PubMed

Holland-Moritz, Henry; Graupner, Julia; Möller, Wolfhard; Pacholski, Claudia; Ronning, Carsten

2018-08-03

If nanostructures are irradiated with energetic ions, the mechanism of sputtering becomes important when the ion range matches about the size of the nanoparticle. Gold nanoparticles with diameters of ∼50 nm on top of silicon substrates with a native oxide layer were irradiated by gallium ions with energies ranging from 1 to 30 keV in a focused ion beam system. High resolution in situ scanning electron microscopy imaging permits detailed insights in the dynamics of the morphology change and sputter yield. Compared to bulk-like structures or thin films, a pronounced shaping and enhanced sputtering in the nanostructures occurs, which enables a specific shaping of these structures using ion beams. This effect depends on the ratio of nanoparticle size and ion energy. In the investigated energy regime, the sputter yield increases at increasing ion energy and shows a distinct dependence on the nanoparticle size. The experimental findings are directly compared to Monte Carlo simulations obtained from iradina and TRI3DYN, where the latter takes into account dynamic morphological and compositional changes of the target.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

NASA Astrophysics Data System (ADS)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Deuterium sputtering of Li and Li-O films

NASA Astrophysics Data System (ADS)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Lead-Tin Telluride Sputtered Thin Films for Infrared Sensors

DTIC Science & Technology

1975-06-01

Concentrations in Pfa .78Sn,22Te Fllms " Tar8et *10 Effect of Substrate Bias Voltage on As-Deposited Carrier Concentration - Target #12 Effect of...be laid down in one deposition run with one target by simple bias voltage control. 3252 Sorption Coef"^^ *"* Energy Gaps. Typical plots

The behaviour of arcs in carbon mixed-mode high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Tucker, M. D.; Putman, K. J.; Ganesan, R.; Lattemann, M.; Stueber, M.; Ulrich, S.; Bilek, M. M. M.; McKenzie, D. R.; Marks, N. A.

2017-04-01

Mixed-mode deposition of carbon is an extension of high-power impulse magnetron sputtering in which a short-lived arc is deliberately allowed to ignite on the target surface to increase the ionised fraction of carbon in the deposition flux. Here we investigate the ignition and evolution of these arcs and examine their behaviour for different conditions of argon pressure, power supply voltage, and current. We find that mixed-mode deposition is sensitive to the condition of the target surface, and changing the operating parameters causes changes in the target surface condition which themselves affect the discharge in a process of negative feedback. Initially the arcs are evenly distributed on the target racetrack, but after a long period of operation the mode of erosion changes and arcs become localised in a small region, resulting in a pronounced nodular structure. We also quantify macroparticle generation and observe a power-law size distribution typical of arc discharges. Fewer particles are generated for operation at lower Ar pressure when the arc spot velocity is higher.

Student research with 400keV beams: {sup 13}N radioisotope production target development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fru, L. Che; Clymer, J.; Compton, N.

2013-04-19

The AN400 Van de Graaff accelerator at the Minnesota State University, Mankato, Applied Nuclear Science Lab has demonstrated utility as an accessible and versatile platform for student research. Despite the limits of low energy, the research team successfully developed projects with applications to the wider radioisotope production community. A target system has been developed for producing and extracting {sup 13}N by the {sup 12}C(d,n){sup 13}N reaction below 400keV. The system is both reusable and robust, with future applications to higher energy machines producing this important radioisotope for physiological imaging studies with Positron Emission Tomography. Up to 36({+-}1)% of the {supmore » 13}N was extracted from the graphite matrix when 35 A current was externally applied to the graphite target while simultaneously flushing the target chamber with CO{sub 2} gas.« less

Structure, mechanical and tribological properties of TiSiC films deposited by magnetron sputtering segment target

NASA Astrophysics Data System (ADS)

Jiang, Jinlong; He, Kaichen; He, XingXing; Huang, Hao; Pang, Xianjuan; Wei, Zhiqiang

2017-12-01

In this work, the TiSiC films were deposited by magnetron sputtering segment target with various areal ratio of Ti80Si20 to C. The effects of segment target component on the structure, mechanical and tribological properties of the films were investigated. The results revealed that the deposited films exhibited a structural transform from a cubic TiC structure to a nanocomposite structure with nanocrystalline TiC in a-C:Si matrix, and finally x-ray amorphous structures with decreasing areal ratio of Ti80Si20 to C. The TiSiC film deposited at the Ti80Si20:C areal ratio of 7:7 showed superior mechanical and tribological properties such as high hardness (18.6 Gpa), good scratch resistant (46 N), low friction coefficient (0.2) and low wear rate (8.6  ×  10-7 mm3 Nm-1), which suggests that it is a promising candidate for the protective films.

Numerical simulations of energy deposition caused by 50 MeV—50 TeV proton beams in copper and graphite targets

NASA Astrophysics Data System (ADS)

Nie, Y.; Schmidt, R.; Chetvertkova, V.; Rosell-Tarragó, G.; Burkart, F.; Wollmann, D.

2017-08-01

The conceptual design of the Future Circular Collider (FCC) is being carried out actively in an international collaboration hosted by CERN, for the post-Large Hadron Collider (LHC) era. The target center-of-mass energy of proton-proton collisions for the FCC is 100 TeV, nearly an order of magnitude higher than for LHC. The existing CERN accelerators will be used to prepare the beams for FCC. Concerning beam-related machine protection of the whole accelerator chain, it is critical to assess the consequences of beam impact on various accelerator components in the cases of controlled and uncontrolled beam losses. In this paper, we study the energy deposition of protons in solid copper and graphite targets, since the two materials are widely used in magnets, beam screens, collimators, and beam absorbers. Nominal injection and extraction energies in the hadron accelerator complex at CERN were selected in the range of 50 MeV-50 TeV. Three beam sizes were studied for each energy, corresponding to typical values of the betatron function. Specifically for thin targets, comparisons between fluka simulations and analytical Bethe equation calculations were carried out, which showed that the damage potential of a few-millimeter-thick graphite target and submillimeter-thick copper foil can be well estimated directly by the Bethe equation. The paper provides a valuable reference for the quick evaluation of potential damage to accelerator elements over a large range of beam parameters when beam loss occurs.

Ultrasonic Remove of Particle Aggregation in Carbon Based Counter Electrodes for Dye-Sensitized Solar Cells.

PubMed

Yang, Pan; Hu, Zi-Jun; Lin, Hong; Lai, Xin-Chun; Zhao, Xiao-Chong; Yang, Li-Jun

2018-06-01

Low-cost carbon materials (carbon black and graphite power) were applied as substitution of platinum (Pt) in counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). Three fabrication methods, such as ball-milled, pulp-refined, and ultrasonic-crushed, were applied to remove the particle aggregation in the carbon pastes. Then the carbon based pastes were printed on fluorine-doped transparent conducting oxide (FTO) glasses, used as the CEs for DSSCs. Under illumination of 100 mW/cm2, DSSCs with ultrasonic-crushed CEs (U-CEs) show an energy conversion efficiency of 3.57%, which reach to 65.38% of that with conventional sputtered platinum CEs (5.46%). In addition, U-CEs exhibit a higher catalytic activity and a faster charge transfer rate toward the reduction of I-3 to I-.

Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

NASA Astrophysics Data System (ADS)

Delahoy, A. E.; Guo, S. Y.

2005-07-01

Highly transparent and conductive In2O3 and ZnO films containing different doping elements such as Ti, Mo, Zr, Nb, Ta, W (for In2O3), and B (for ZnO) have been prepared by reactive-environment, hollow cathode sputtering (RE-HCS). The use of Nb and W as effective dopants is reported for the first time. Metallic targets were used exclusively, and the dopant concentration was easily controlled using a second sputtering power supply. As a result of the cathode and gas flow geometry, the sputtering is conducted in metal mode, and the target and doping materials are free from oxidation during the deposition process. Film resistivities achieved with the various dopants are reported. For In2O3:Mo (IMO), a resistivity of 1.6×10-4Ω cm and a mobility of 80 cm2/Vs were achieved for Mo concentrations in the range 0.5-5.0% as measured by inductively coupled plasma (ICP). X-ray photoelectron spectroscopy (XPS) analysis indicates Mo with a +6 valence state and that the film is stoichiometric. For In2O3:Ti (ITiO), a superior optical transmission is achieved relative to IMO, while carrier mobility and conductivity were similar. Remarkably, semitransparent films of InN:O having sheet resistances of 9.5 Ω/square have also been prepared. ZnO:B films deposited by RE-HCS exhibit superior optical properties relative to ZnO:Al, and when applied as a window layer to CIGS solar cells yield higher quantum efficiencies.

Ion plasma deposition of oxide films with graded-stoichiometry composition: Experiment and simulation

NASA Astrophysics Data System (ADS)

Volpyas, V. A.; Tumarkin, A. V.; Mikhailov, A. K.; Kozyrev, A. B.; Platonov, R. A.

2016-07-01

A method of ion plasma deposition is proposed for obtaining thin multicomponent films with continuously graded composition in depth of the film. The desired composition-depth profile is obtained by varying the working gas pressure during deposition in the presence of an additional adsorbing screen in the drift space between a sputtered target and substrate. Efficiency of the proposed method is confirmed by Monte Carlo simulation of the deposition of thin films of Ba x Sr1- x TiO3 (BSTO) solid solution. It is demonstrated that, during sputtering of a Ba0.3Sr0.7TiO3 target, the parameter of composition stoichiometry in the growing BSTO film varies in the interval of x = 0.3-0.65 when the gas pressure is changed within 2-60 Pa.

Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

1998-01-01

The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-09-01

Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Modeling of beam-target interaction during pulsed electron beam ablation of graphite: Case of melting

NASA Astrophysics Data System (ADS)

Ali, Muddassir; Henda, Redhouane

2017-02-01

A one-dimensional thermal model based on a two-stage heat conduction equation is employed to investigate the ablation of graphite target during nanosecond pulsed electron beam ablation. This comprehensive model accounts for the complex physical phenomena comprised of target heating, melting and vaporization upon irradiation with a polyenergetic electron beam. Melting and vaporization effects induced during ablation are taken into account by introducing moving phase boundaries. Phase transition induced during ablation is considered through the temperature dependent thermodynamic properties of graphite. The effect of electron beam efficiency, power density, and accelerating voltage on ablation is analyzed. For an electron beam operating at an accelerating voltage of 15 kV and efficiency of 0.6, the model findings show that the target surface temperature can reach up to 7500 K at the end of the pulse. The surface begins to melt within 25 ns from the pulse start. For the same process conditions, the estimated ablation depth and ablated mass per unit area are about 0.60 μm and 1.05 μg/mm2, respectively. Model results indicate that ablation takes place primarily in the regime of normal vaporization from the surface. The results obtained at an accelerating voltage of 15 kV and efficiency factor of 0.6 are satisfactorily in good accordance with available experimental data in the literature.

Retention of neon in graphite after ion beam implantation or exposures to the scrape-off layer plasma in the TEXTOR tokamak

NASA Astrophysics Data System (ADS)

Kim, Y. M.; Philipps, V.; Rubel, M.; Vietzke, E.; Pospieszczyk, A.; Unterberg, B.; Jaspers, R.

2002-01-01

The interaction of neon ions with graphite was investigated for targets either irradiated with ion beams (2-10 keV range) or exposed to the scrape-off layer plasma in the TEXTOR tokamak during discharges with neon edge cooling. The emphasis was on the influence of the target temperature (300-1200 K) and the implantation dose on the neon retention and reemission. The influence of deuterium impact on the retention of neon implanted into graphite has also been addressed. In ion beam experiments saturation is observed above a certain ion dose with a saturation level, which decreases with increasing target temperature. The temperature dependence of the thermal desorption corresponds to an apparent binding energy of about 2.06 eV. The retention of neon (CNe/CC) decreases with increasing ion energy with values from 0.55 to 0.15 following irradiation with 2 and 10 keV ions, respectively. The reemission yield during the irradiation increases with target temperature and above 1200 K all impinging ions are reemitted instantaneously. The retention densities measured using the sniffer probe at the TEXTOR tokamak are less than 1% of the total neon fluence and are over one order of magnitude smaller than those observed in ion beam experiments. The results are discussed in terms of different process decisive for ion deposition and release under the two experimental conditions.

Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

2015-04-01

In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

PubMed Central

Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

2016-01-01

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE PAGES

Gaowei, M.; Ding, Z.; Schubert, S.; ...

2017-11-10

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaowei, M.; Ding, Z.; Schubert, S.

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

Raman and PEELS studies of magnetron sputtered a-C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.; Jen, T.M.; Zeng, X.

Amorphous carbon coatings (a-C, a-C:H) of less than 100 nm thick were deposited on KBr pellets and silicon wafer substrate via magnetron sputtering of graphic target in argon, argon/hydrogen and argon/nitrogen atmosphere. Parallel electron energy loss spectroscopy (PEELS) analysis was used to quantify the sp{sup 2}/sp{sup 3} bonding in carbon films. Stand-alone films of amorphous carbon were produced by sputtering onto compressed KBr pellets and then floating off in distilled water for PEELS study. Raman spectroscopy was used to measure the peak intensity ratio of D-band to that of the G-band (I{sub d}/I{sub g}). It shows that higher sp{sup 3}more » fraction often associates with Raman peak ratio I{sub d}/I{sub g}. At the same time, G-band peak position P{sub g} decreases while sp{sup 3} fraction increases.« less

Characterization of polycrystalline nickel cobaltite nanostructures prepared by DC plasma magnetron co-sputtering for gas sensing applications

NASA Astrophysics Data System (ADS)

Hammadi, Oday A.; Naji, Noor E.

2018-03-01

In this work, a gas sensor is fabricated from polycrystalline nickel cobaltite nano films deposited on transparent substrates by closed-field unbalanced dual-magnetrons (CFUBDM) co-sputtering technique. Two targets of nickel and cobalt are mounted on the cathode of discharge system and co-sputtered by direct current (DC) argon discharge plasma in presence of oxygen as a reactive gas. The total gas pressure is 0.5 mbar and the mixing ratio of Ar:O2 gases is 5:1. The characterization measurements performed on the prepared films show that their transmittance increases with the incident wavelength, the polycrystalline structure includes 5 crystallographic planes, the average particle size is about 35 nm, the electrical conductivity is linearly increasing with increasing temperature, and the activation energy is about 0.41 eV. These films show high sensitivity to ethanol vapor.

Rapid evaluation of ion thruster lifetime using optical emission spectroscopy

NASA Technical Reports Server (NTRS)

Rock, B. A.; Parsons, M. L.; Mantenieks, M. A.

1985-01-01

A major life-limiting phenomenon of electric thrusters is the sputter erosion of discharge chamber components. Thrusters for space propulsion are required to operate for extended periods of time, usually in excess of 10,000 hr. Lengthy and very costly life-tests in high-vacuum facilities have been required in the past to determine the erosion rates of thruster components. Alternative methods for determining erosion rates which can be performed in relatively short periods of time at considerably lower costs are studied. An attempt to relate optical emission intensity from an ion bombarded surface (screen grid) to the sputtering rate of that surface is made. The model used a kinetic steady-state (KSS) approach, balancing the rates of population and depopulation of ten low-lying excited states of the sputtered molybdenum atom (MoI) with those of the ground state to relate the spectral intensities of the various transitions of the MoI to the population densities. Once this is accomplished, the population density can be related to the sputting rate of the target. Radiative and collisional modes of excitation and decay are considered. Since actual data has not been published for MoI excitation rate and decay constants, semiempirical equations are used. The calculated sputtering rate and intensity is compared to the measured intensity and sputtering rates of the 8 and 30 cm ion thrusters.

Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.

The authors demonstrate mobilities of >45 cm{sup 2}/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO{sub 2}, instead of the more conventional 8–10 wt. %, and had varying ZrO{sub 2} content from 0 to 3 wt. %, with a subsequent reduction in In{sub 2}O{sub 3} content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions.more » However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO{sub 2}. The addition of ZrO{sub 2} yielded the highest mobilities at >55 cm{sup 2}/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Characterizations of the Core-Shell Structured MgB2/CARBON Fiber Synthesis by Rf-Sputtering and Thermal Evaporation

NASA Astrophysics Data System (ADS)

Park, Sung Chang; Lim, Yeong Jin; Lee, Tae-Keun; Kim, Cheol Jin

MgB2/carbon fibers have been synthesized by the combination of RF-sputtering of B and thermal evaporation of Mg, followed by co-evaporation. First, boron layer was deposited by RF-sputtering on the carbon fiber with average diameter of 7.1 μm. Later this coated layer of B was reacted with Mg vapor to transform into MgB2. Since the MgB2 reaction proceed with Mg diffusion into the boron layer, Mg vapor pressure and the diffusion time had to be controlled precisely to secure the complete reaction. Also the deposition rate of each element was controlled separately to obtain stoichiometric MgB2, since Mg was evaporated by thermal heating and B by sputtering system. The sintered B target was magnetron sputtered at the RF-power of ~200 W, which corresponded to the deposition rate of ~3.6 Å/s. With the deposition rate of B fixed, the vapor pressure of Mg was controlled by varying the temperature of tungsten boat with heating element control unit between 100 and 900°C. The MgB2 layers with the thickness of 200-950 nm could be obtained and occasionally MgO appeared as a second phase. Superconducting transition temperatures were measured around ~38 K depending on the deposition condition.

Dust Detection by Curiosity ChemCam

NASA Image and Video Library

2013-04-08

The ChemCam instrument on NASA Curiosity Mars rover fired its laser 50 times at its onboard graphite target showing spectral measurements from the first shot, which hit dust on the target, compared to spectral measurements of from the 50th shot.

Crater function moments: Role of implanted noble gas atoms

NASA Astrophysics Data System (ADS)

Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2018-04-01

Spontaneous pattern formation by energetic ion beams is usually explained in terms of surface-curvature dependent sputtering and atom redistribution in the target. Recently, the effect of ion implantation on surface stability has been studied for nonvolatile ion species, but for the case of noble gas ion beams it has always been assumed that the implanted atoms can be neglected. In this work, we show by molecular dynamics (MD) and Monte Carlo (MC) simulations that this assumption is not valid in a wide range of implant conditions. Sequential-impact MD simulations are performed for 1-keV Ar, 2-keV Kr, and 2-keV Xe bombardments of Si, starting with a pure single-crystalline Si target and running impacts until sputtering equilibrium has been reached. The simulations demonstrate the importance of the implanted ions for crater-function estimates. The atomic volumes of Ar, Kr, and Xe in Si are found to be a factor of two larger than in the solid state. To extend the study to a wider range of energies, MC simulations are performed. We find that the role of the implanted ions increases with the ion energy although the increase is attenuated for the heavier ions. The analysis uses the crater function formalism specialized to the case of sputtering equilibrium.

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

NASA Astrophysics Data System (ADS)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Sputtered superconducting films of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x made by low-temperature, in-situ growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kampwirth, R.T.; Gray, K.E.; Andersen, P.H.

1989-01-01

Composite target rf magnetron sputtering has previously been successfully employed to make superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} in-situ at substrate temperatures T{sub s} < 700{degree}C. We report the successful growth of superconducting films of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub x} on single crystal MgO substrates by a low-temperature process using dc magnetron sputtering from a Bi-enriched composite target. Using a substrate temperature T{sub s} {approx} 645{degree}C, metallic films with a superconducting onset of 90--100K and an extrapolated T{sub c0} = 56K have been obtained. X-ray diffraction shows the films to be c-axis oriented. Electron microscopy reveals that the filmsmore » are not significantly smoother than films which were post-annealed at 865{degree}C, and that some segregation into nonsuperconducting phases had occurred. The exact mechanism by which crystallization and superconductivity occurs at such low temperatures is not yet known, but it can be speculated that the surface atoms are less constrained and thus have a smaller energy barrier to overcome in forming a crystal structure. 9 refs., 4 figs., 1 tab.« less

An X-ray monitor for measurement of a titanium tritide target thickness

NASA Technical Reports Server (NTRS)

Alger, D. L.; Steinberg, R.

1972-01-01

An X-ray device capable of measuring titanium tritide film thickness from 0.1 to 30 micrometers has been built and tested. The monitor was designed for use in a rotating target system which used thick targets and incorporated a sputtering electrode to remove depleted layers from the target surface. The thickness measurement can be done in the presence of an intense background of bremsstrahlung and characteristic titanium X-radiation. A measurement can be accomplished in situ in two hours with reasonable accuracy.

Microstructure characterization of advanced protective Cr/CrN+a-C:H/a-C:H:Cr multilayer coatings on carbon fibre composite (CFC).

PubMed

Major, L; Janusz, M; Lackner, J M; Kot, M; Major, B

2016-06-01

Studies of advanced protective chromium-based coatings on the carbon fibre composite (CFC) were performed. Multidisciplinary examinations were carried out comprising: microstructure transmission electron microscopy (TEM, HREM) studies, micromechanical analysis and wear resistance. Coatings were prepared using a magnetron sputtering technique with application of high-purity chromium and carbon (graphite) targets deposited on the CFC substrate. Selection of the CFC for surface modification in respect to irregularities on the surface making the CFC surface more smooth was performed. Deposited coatings consisted of two parts. The inner part was responsible for the residual stress compensation and cracking initiation as well as resistance at elevated temperatures occurring namely during surgical tools sterilization process. The outer part was responsible for wear resistance properties and biocompatibility. Experimental studies revealed that irregularities on the substrate surface had a negative influence on the crystallites growth direction. Chromium implanted into the a-C:H structure reacted with carbon forming the cubic nanocrystal chromium carbides of the Cr23 C6 type. The cracking was initiated at the coating/substrate interface and the energy of brittle cracking was reduced because of the plastic deformation at each Cr interlayer interface. The wear mechanism and cracking process was described in micro- and nanoscale by means of transmission electron microscope studies. Examined materials of coated CFC type would find applications in advanced surgical tools. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

2013-06-01

Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si withoutmore » HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.« less

Spectroscopic determinations of carbon fluxes, sources, and shielding in the DIII-D divertors

NASA Astrophysics Data System (ADS)

Isler, R. C.; Colchin, R. J.; Brooks, N. H.; Evans, T. E.; West, W. P.; Whyte, D. G.

2001-10-01

The most important mechanisms for eroding plasma-facing components (PFCs) and introducing carbon into tokamak divertors are believed to be physical sputtering, chemical sputtering, sublimation, and radiation enhance sublimation (RES). The relative importance of these processes has been investigated by analyzing the spectral emission rates and the effective temperatures of CI, CD, and C2 under several operating conditions in the DIII-D tokamak [Plasma Physics Controlled Nuclear Fusion Research, 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. I, p. 159; Proceedings of the 18th IEEE/NPSS Symposium on Fusion Engineering, Albuquerque (Institute of Electrical and Electronic Engineers, Piscataway, 1999), p. 515]. Discrimination of chemical sputtering from physical sputtering is accomplished by quantitatively relating the fraction of CI influxes expected from dissociation of hydrocarbons to the measured CD and C2 influxes. Characteristics of sublimation are studied from carbon test samples heated to surface temperatures exceeding 2000 K. The shielding efficiency of carbon produced at the divertor target is assessed from comparison of fluxes of neutral atoms and ions; approximately 95% of the primary influx appears to be redeposited before being transported far enough upstream to fuel the core plasma.

Spectroscopic determinations of carbon fluxes, sources, and shielding in the DIII-D divertors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isler, R. C.; Colchin, R. J.; Brooks, N. H.

2001-10-01

The most important mechanisms for eroding plasma-facing components (PFCs) and introducing carbon into tokamak divertors are believed to be physical sputtering, chemical sputtering, sublimation, and radiation enhance sublimation (RES). The relative importance of these processes has been investigated by analyzing the spectral emission rates and the effective temperatures of CI, CD, and C{sub 2} under several operating conditions in the DIII-D tokamak [Plasma Physics Controlled Nuclear Fusion Research, 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. I, p. 159; Proceedings of the 18th IEEE/NPSS Symposium on Fusion Engineering, Albuquerque (Institute of Electrical and Electronic Engineers, Piscataway, 1999), p. 515]. Discriminationmore » of chemical sputtering from physical sputtering is accomplished by quantitatively relating the fraction of CI influxes expected from dissociation of hydrocarbons to the measured CD and C{sub 2} influxes. Characteristics of sublimation are studied from carbon test samples heated to surface temperatures exceeding 2000 K. The shielding efficiency of carbon produced at the divertor target is assessed from comparison of fluxes of neutral atoms and ions; approximately 95% of the primary influx appears to be redeposited before being transported far enough upstream to fuel the core plasma.« less

Near-Infrared Spectroscopy for Zeeman Spectra of Ti I in Plasma Using a Facing Target Sputtering System

NASA Astrophysics Data System (ADS)

Kobayashi, Shinji; Nishimiya, Nobuo; Suzuki, Masao

2017-10-01

The saturated absorption lines of neutral titanium were measured in the region of 9950-14380 cm-1 using a Ti:sapphire ring laser. A facing target sputtering system was used to obtain the gaseous state of a Ti I atom. The Zeeman splitting of 38 transitions was observed under the condition that the electric field component of a linearly polarized laser beam was parallel to the magnetic field. The gJ factors of the odd parity states were determined for 28 states belonging to 3d24s4p and 3d34p using those of the even parity states reported by Stachowska in 1997. The gJ factors of z5P1,2,3 levels were newly determined. gJ of y3F2, y3D2, z3P2, and z5S2 levels were refined.

Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

NASA Astrophysics Data System (ADS)

Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

1981-02-01

An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

High performance ZnO:Al films deposited on PET substrates using facing target sputtering

NASA Astrophysics Data System (ADS)

Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

2013-10-01

ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou

2015-11-23

This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with themore » bias stability and thermal stability.« less

Full-Process Computer Model of Magnetron Sputter, Part I: Test Existing State-of-Art Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C C; Gilmer, G H; Wemhoff, A P

2007-09-26

This work is part of a larger project to develop a modeling capability for magnetron sputter deposition. The process is divided into four steps: plasma transport, target sputter, neutral gas and sputtered atom transport, and film growth, shown schematically in Fig. 1. Each of these is simulated separately in this Part 1 of the project, which is jointly funded between CMLS and Engineering. The Engineering portion is the plasma modeling, in step 1. The plasma modeling was performed using the Object-Oriented Particle-In-Cell code (OOPIC) from UC Berkeley [1]. Figure 2 shows the electron density in the simulated region, using magneticmore » field strength input from experiments by Bohlmark [2], where a scale of 1% is used. Figures 3 and 4 depict the magnetic field components that were generated using two-dimensional linear interpolation of Bohlmark's experimental data. The goal of the overall modeling tool is to understand, and later predict, relationships between parameters of film deposition we can change (such as gas pressure, gun voltage, and target-substrate distance) and key properties of the results (such as film stress, density, and stoichiometry.) The simulation must use existing codes, either open-source or low-cost, not develop new codes. In part 1 (FY07) we identified and tested the best available code for each process step, then determined if it can cover the size and time scales we need in reasonable computation times. We also had to determine if the process steps are sufficiently decoupled that they can be treated separately, and identify any research-level issues preventing practical use of these codes. Part 2 will consider whether the codes can be (or need to be) made to talk to each other and integrated into a whole.« less

An ionization region model of the reactive Ar/O2 high power impulse magnetron sputtering discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Lundin, D.; Brenning, N.; Raadu, M. A.; Huo, Chunqing; Minea, T. M.

2016-12-01

A new reactive ionization region model (R-IRM) is developed to describe the reactive Ar/O2 high power impulse magnetron sputtering (HiPIMS) discharge with a titanium target. It is then applied to study the temporal behavior of the discharge plasma parameters such as electron density, the neutral and ion composition, the ionization fraction of the sputtered vapor, the oxygen dissociation fraction, and the composition of the discharge current. We study and compare the discharge properties when the discharge is operated in the two well established operating modes, the metal mode and the poisoned mode. Experimentally, it is found that in the metal mode the discharge current waveform displays a typical non-reactive evolution, while in the poisoned mode the discharge current waveform becomes distinctly triangular and the current increases significantly. Using the R-IRM we explore the current increase and find that when the discharge is operated in the metal mode Ar+ and Ti+ -ions contribute most significantly (roughly equal amounts) to the discharge current while in the poisoned mode the Ar+ -ions contribute most significantly to the discharge current and the contribution of O+ -ions, Ti+ -ions, and secondary electron emission is much smaller. Furthermore, we find that recycling of atoms coming from the target, that are subsequently ionized, is required for the current generation in both modes of operation. From the R-IRM results it is found that in the metal mode self-sputter recycling dominates and in the poisoned mode working gas recycling dominates. We also show that working gas recycling can lead to very high discharge currents but never to a runaway. It is concluded that the dominating type of recycling determines the discharge current waveform.

Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

NASA Astrophysics Data System (ADS)

Hecimovic, Ante

2012-10-01

High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrasonis, G.; Gago, R.; Jimenez, I.

2005-10-01

Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas.more » The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.« less

Selected fretting-wear-resistant coatings for titanium - 6-percent-aluminum - 4-percent-vanadium alloy

NASA Technical Reports Server (NTRS)

Bill, R. C.

1976-01-01

A titanium - 6-percent-aluminum - 4-percent-vanadium alloy (Ti-6Al-4V) was subjected to fretting-wear exposures against uncoated Ti-6Al-4V as a baseline and against various coatings and surface treatments applied to Ti-6Al-4V. The coatings evaluated included plasma-sprayed tungsten carbide with 12 percent cobalt, aluminum oxide with 13 percent titanium oxide, chromium oxide, and aluminum bronze with 10 percent aromatic polyester; polymer-bonded polyimide, polyimide with graphite fluoride, polyimide with molybdenum disulfide (MoS2), and methyl phenyl silicone bonded MoS2, preoxidation surface treatment, a nitride surface treatment, and a sputtered MoS2 coating. Results of wear measurements on both the coated and uncoated surfaces after 300,000 fretting cycles indicated that the polyimide coating was the most wear resistant and caused the least wear to the uncoated mating surface.

Solid-state reaction of iron on β-SiC

NASA Astrophysics Data System (ADS)

Kaplan, R.; Klein, P. H.; Addamiano, A.

1985-07-01

The solid-state reaction between Fe and β-SiC has been studied using Auger-electron and electron-energy-loss spectroscopies and ion sputter profiling. Fe films from submonolayer coverage to 1000 Å thickness were grown in ultrahigh vacuum, and annealed at temperatures up to 550 °C. Auger line-shape changes occurred even for initial Fe coverage at 190 °C, indicating substantial bond alteration in the SiC substrate. A 1000-Å film was largely consumed by reaction with Si and C diffused from the substrate during a 500 °C anneal, and exhibited both Fe silicide and carbide throughout most of its original volume and free C present as graphite primarily at the surface. As an aid in identifying the reaction products studied in this work, Auger line shapes were first determined for the SiLVV peak in Fe silicide and for the CKLL transition in Fe carbide.

Wear Trends of the HERMeS Thruster as a Function of Throttle Point

NASA Technical Reports Server (NTRS)

Williams, George J., Jr.; Kamhawi, Hani; Choi, Maria; Haag, Thomas; Huang, Wensheng; Herman, Daniel A.; Gilland, James H.; Peterson, Peter Y.

2017-01-01

A series of short-duration (200 hour) wear tests were conducted with two Hall Effect Rocket with Magnetic Shielding (HERMeS) technology demonstration units (TDU). Front pole covers, cathode keeper, and discharge channel wear were characterized as a function of discharge voltage, magnetic field strength, and chamber pressure. No discharge channel erosion was observed. Inner pole cover erosion was shown to be a weak function of discharge voltage with most erosion occurring at the lowest value, 300 volts. The TDU-3 keeper electrode eroded with each operating condition, with high magnetic field yielding the greatest erosion rate. The TDU-1 keeper electrode exhibited net deposition suggesting its configuration is more consistent with meeting overall HERMeS service life requirements. Ratios of molybdenum to graphite erosion rates suggests, with high uncertainty, that the sputtering ions are originating downstream of the thruster exit plane, striking the surface with small angles of incidence.

Laser ablation of a silicon target in chloroform: formation of multilayer graphite nanostructures

NASA Astrophysics Data System (ADS)

Abderrafi, Kamal; García-Calzada, Raúl; Sanchez-Royo, Juan F.; Chirvony, Vladimir S.; Agouram, Saïd; Abargues, Rafael; Ibáñez, Rafael; Martínez-Pastor, Juan P.

2013-04-01

With the use of high-resolution transmission electron microscopy, selected area electron diffraction and x-ray photoelectron spectroscopy methods of analysis we show that the laser ablation of a Si target in chloroform (CHCl3) by nanosecond UV pulses (40 ns, 355 nm) results in the formation of about 50-80 nm core-shell nanoparticles with a polycrystalline core composed of small (5-10 nm) Si and SiC mono-crystallites, the core being coated by several layers of carbon with the structure of graphite (the shell). In addition, free carbon multilayer nanostructures (carbon nano-onions) are also found in the suspension. On the basis of a comparison with similar laser ablation experiments implemented in carbon tetrachloride (CCl4), where only bare (uncoated) Si nanoparticles are produced, we suggest that a chemical (solvent decomposition giving rise to highly reactive CH-containing radicals) rather than a physical (solvent atomization followed by carbon nanostructure formation) mechanism is responsible for the formation of graphitic shells. The silicon carbonization process found for the case of laser ablation in chloroform may be promising for silicon surface protection and functionalization.

Perspective of Muon Production Target at J-PARC MLF MUSE

NASA Astrophysics Data System (ADS)

Makimura, Shunsuke; Matoba, Shiro; Kawamura, Naritoshi; Matsuzawa, Yukihiro; Tabe, Masato; Aoyagi, Hiroyuki; Kondo, Hiroto; Kobayashi, Yasuo; Fujimori, Hiroshi; Ikedo, Yutaka; Kadono, Ryosuke; Koda, Akihiro; Kojima, Kenji M.; Miyake, Yasuhiro; Nakamura, Jumpei G.; Oishi, Yu; Okabe, Hirotaka; Shimomura, Koichiro; Strasser, Patrick

A pulsed muon beam with unprecedented intensity will be generated by a 3-GeV 333-microA proton beam on a muon target made of 20-mm thick isotropic graphite at J-PARC MLF MUSE (Muon Science Establishment). The first muon beam was successfully generated on September 26th, 2008. Gradually upgrading the beam intensity, continuous 300-kW proton beam has been operated by a fixed target method without replacements till June of 2014. However, the lifetime of the fixed target was anticipated to be less than 1 year by the proton-irradiation damage of the graphite through 1-MW beam operation. To extend the lifetime, a muon rotating target, in which the radiation damage is distributed to a wider area, was installed in September of 2014, and continuous and stable operation has been successfully performed. Because the muon target becomes highly radioactive by the proton irradiation, the maintenance is conducted by remote handling in the Hot cell. In September of 2015, a scraper No. 1 to collimate the proton beam scattered by the target was replaced for further high-power beam operation. Recently, new developments on monitoring and maintenance of the muon target for higher power operation are in progress. In this article, perspective of muon production target at J-PARC MLF MUSE will be described.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

NASA Astrophysics Data System (ADS)

Lin, Jianliang; Chistyakov, Roman

2017-02-01

Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

The effect of oxidant on resputtering of Bi from Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-09-01

The type and partial pressure of oxidant mixed with argon can affect the selective resputtering of Bi in composite-target, magnetron-sputtered Bi-Sr-Ca-Cu-O films. Comparative studies using oxygen and ozone show that ozone is a more potent oxidant, as well as a more potent source of resputterers, than is oxygen. Severe resputtering from ozone is significantly reduced by a -40 V potential on the sample block. We suggest that oxygen causes resputtering by forming O2(+)p , which interacts with the target to produce energetic O(-). In contrast, ozone may form lower-energy O(-) by electron impact in the dark space. Negative oxygen ions from the target itself may be responsible for a background resputtering effect. Our results and those found for Y-Ba-Cu-O by others are comparable. Bi in Bi-Sr-Ca-Cu-O behaves as Ba in Y-Ba-Cu-O, with regard to selective resputtering; furthermore, the response of Sr, Ca, and Cu to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for Cu in Y-Ba-Cu-O.

Solid State Research

DTIC Science & Technology

1990-02-15

the magnetic field configuration to obtain a more uniforml sputtering of the target. Substrates of lanthanium aluniinate (LaAIO 3 ), lanthanum gallate ...technologies, we have fabricated all-gold and all-niobium versions of the microstrip filters in order to verify device performance. Lanthanum

High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, J. C.; Department of Engineering Physics, Polytechnique Montréal, Montreal, Quebec H3A 3A7; Jha, S. K., E-mail: skylec@gmail.com, E-mail: apwjzh@cityu.edu.hk

2014-11-10

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

Superconductivity in BiPbCaSrCuO thin films

NASA Astrophysics Data System (ADS)

Fu, S. M.; Yang, H. C.; Chen, F. C.; Horng, H. E.; Jao, J. C.

1989-12-01

Thin films of BiPbCaSrCuO sample were prepared by RF sputtering from sintered ceramic targets. Single crystal of MgO(100) was selected as substrate. The sputtering was held at room temperature. Different annealing conditions were carried out to obtain optimum conditions. High temperature resistivity was measured in air to study the thermodynamic reaction of the sintered films. An resistivity anomaly was found in the first heating cycle which suggests a thermodynamic reaction. A temperature dependence of I c was measured to study the coupling of grains in the granular films in different temperature ranges and the results will be discussed.

Shape-memory properties in Ni-Ti sputter-deposited film

NASA Technical Reports Server (NTRS)

Busch, J. D.; Johnson, A. D.; Lee, C. H.; Stevenson, D. A.

1990-01-01

A Ni-Ti alloy, generically called nitinol, was prepared from sputtering targets of two different compositions on glass substrates using a dc magnetron source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.

Synthesis and properties of nanocrystalline copper indium oxide thin films deposited by Rf magnetron sputtering.

PubMed

Singh, Mandeep; Singh, V N; Mehta, B R

2008-08-01

Nanocrystalline copper indium oxide (CuInO2) thin films with particle size ranging from 25 nm to 71 nm have been synthesized from a composite target using reactive Rf magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) combined with glancing angle X-ray diffraction (GAXRD) analysis confirmed the presence of delafossite CuInO2 phase in these films. The optical absorption studies show the presence of two direct band gaps at 3.3 and 4.3 eV, respectively. The resistance versus temperature measurements show thermally activated hopping with activation energy of 0.84 eV to be the conduction mechanism.

Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling.

PubMed

Czigány, Zs; Neidhardt, J; Brunell, I F; Hultman, L

2003-04-01

The microstructure of CN(x) thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN(x) surfaces. The thickness of the damaged surface layer at 5 degrees grazing incidence was 13 and 10nm at 3 and 0.8keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25keV, was less than 1nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN(x) films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN(x) was observed at 200kV.

Emergent magnetism at transition-metal–nanocarbon interfaces

PubMed Central

Al Ma’Mari, Fatma; Rogers, Matthew; Alghamdi, Shoug; Moorsom, Timothy; Lee, Stephen; Prokscha, Thomas; Luetkens, Hubertus; Valvidares, Manuel; Flokstra, Machiel; Stewart, Rhea; Ali, Mannan; Burnell, Gavin; Hickey, B. J.

2017-01-01

Charge transfer at metallo–molecular interfaces may be used to design multifunctional hybrids with an emergent magnetization that may offer an eco-friendly and tunable alternative to conventional magnets and devices. Here, we investigate the origin of the magnetism arising at these interfaces by using different techniques to probe 3d and 5d metal films such as Sc, Mn, Cu, and Pt in contact with fullerenes and rf-sputtered carbon layers. These systems exhibit small anisotropy and coercivity together with a high Curie point. Low-energy muon spin spectroscopy in Cu and Sc–C60 multilayers show a quick spin depolarization and oscillations attributed to nonuniform local magnetic fields close to the metallo–carbon interface. The hybridization state of the carbon layers plays a crucial role, and we observe an increased magnetization as sp3 orbitals are annealed into sp2−π graphitic states in sputtered carbon/copper multilayers. X-ray magnetic circular dichroism (XMCD) measurements at the carbon K edge of C60 layers in contact with Sc films show spin polarization in the lowest unoccupied molecular orbital (LUMO) and higher π*-molecular levels, whereas the dichroism in the σ*-resonances is small or nonexistent. These results support the idea of an interaction mediated via charge transfer from the metal and dz–π hybridization. Thin-film carbon-based magnets may allow for the manipulation of spin ordering at metallic surfaces using electrooptical signals, with potential applications in computing, sensors, and other multifunctional magnetic devices. PMID:28507160

Magnetron sputtered diamond-like carbon microelectrodes for on-chip measurement of quantal catecholamine release from cells

PubMed Central

Gao, Yuanfang; Chen, Xiaohui; Gupta, Sanju; Gillis, Kevin D.; Gangopadhyay, Shubhra

2008-01-01

Carbon electrodes are widely used in electrochemistry due to their low cost, wide potential window, and low and stable background noise. Carbon-fiber electrodes (CFE) are commonly used to electrochemically measure “quantal” catecholamine release via exocytosis from individual cells, but it is difficult to integrate CFEs into lab-on-a-chip devices. Here we report the development of nitrogen doped diamond-like carbon (DLC:N) microelectrodes on a chip to monitor quantal release of catecholamines from cells. Advantages of DLC:N microelectrodes are that they are batch producible at low cost, and are harder and more durable than graphite films. The DLC:N microelectrodes were prepared by a magnetron sputtering process with nitrogen doping. The 30 μm by 40 μm DLC:N microelectrodes were patterned onto microscope glass slides by photolithography and lift-off technology. The properties of the DLC:N microelectrodes were characterized by AFM, Raman spectroscopy and cyclic voltammetry. Quantal catecholamine release was recorded amperometrically from bovine adrenal chromaffin cells on the DLC:N microelectrodes. Amperometric spikes due to quantal release of catecholamines were similar in amplitude and area as those recorded using CFEs and the background current and noise levels of microchip DLC:N electrodes were also comparable to CFEs. Therefore, DLC:N microelectrodes are suitable for microchip-based high-throughput measurement of quantal exocytosis with applications in basic research, drug discovery and cell-based biosensors. PMID:18493856

Surface and material analytics based on Dresden-EBIS platform technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, M., E-mail: mike.schmidt@dreebit.com; König, J., E-mail: mike.schmidt@dreebit.com; Bischoff, L.

2015-01-09

Nowadays widely used mass spectrometry systems utilize energetic ions hitting a sample and sputter material from the surface of a specimen. The generated secondary ions are separated and detected with high mass resolution to determine the target materials constitution. Based on this principle, we present an alternative approach implementing a compact Electron Beam Ion Source (EBIS) in combination with a Liquid Metal Ion Source (LMIS). An LMIS can deliver heavy elements which generate high sputter yields on a target surface. More than 90% of this sputtered material consists of mono- and polyatomic neutrals. These particles are able to penetrate themore » magnetic field of an EBIS and they will be ionized within the electron beam. A broad spectrum of singly up to highly charged ions can be extracted depending on the operation conditions. Polyatomic ions will decay during the charge-up process. A standard bending magnet or a Wien filter is used to separate the different ion species due to their mass-to-charge ratio. Using different charge states of ions as it is common with EBIS it is also possible to resolve interfering charge-to-mass ratios of only singly charged ions. Different setups for the realization of feeding the electron beam with sputtered atoms of solids will be presented and discussed. As an example the analysis of a copper surface is used to show high-resolution spectra with low background noise. Individual copper isotopes and clusters with different isotope compositions can be resolved at equal atomic numbers. These results are a first step for the development of a new compact low-cost and high-resolution mass spectrometry system. In a more general context, the described technique demonstrates an efficient method for feeding an EBIS with atoms of nearly all solid elements from various solid target materials. The new straightforward design of the presented setup should be of high interest for a broad range of applications in materials research as well as for applications connected to analyzing the biosphere, hydrosphere, lithosphere, cosmosphere and technosphere.« less

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

NASA Astrophysics Data System (ADS)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

Varying Radii of On-Axis Anode Hollows For kJ-Class Dense Plasma Focus

NASA Astrophysics Data System (ADS)

Shaw, Brian; Chapman, Steven; Falabella, Steven; Pankin, Alexei; Liu, Jason; Link, Anthony; Schmidt, Andréa

2017-10-01

A dense plasma focus (DPF) is a compact plasma gun that produces high energy ion beams, up to several MeV, through strong potential gradients. Motivated by particle-in-cell simulations, we have tried a series of hollow anodes on our kJ-class DPF. Each anode has varying hollow sizes, and has been studied to optimize ion beam production in Helium, reduce anode sputter, and increase neutron yields in deuterium. We diagnose the rate at which electrode material is ablated and deposited onto nearby surfaces. This is of interest in the case of solid targets, which perform poorly in the presence of sputter. We have found that the larger the hollow radius produces more energetic ion beams, higher neutron yield, and sputter less than a flat top anode. A complete comparison is presented. This work was prepared by LLNL under Contract DE-AC52-07NA27344 and supported by Office of Defense Nuclear Nonproliferation Research and Development within U.S. Department of Energy's National Nuclear Security Administration.

Boron-rich plasma by high power impulse magnetron sputtering of lanthanum hexaboride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oks, Efim M.; Anders, Andre

2012-10-15

Boron-rich plasmas have been obtained using a LaB{sub 6} target in a high power impulse sputtering (HiPIMS) system. The presence of {sup 10}B{sup +}, {sup 11}B{sup +}, Ar{sup 2+}, Ar{sup +}, La{sup 2+}, and La{sup +} and traces of La{sup 3+}, {sup 12}C{sup +}, {sup 14}N{sup +}, and {sup 16}O{sup +} have been detected using an integrated mass and energy spectrometer. Peak currents as low as 20 A were sufficient to obtain plasma dominated by {sup 11}B{sup +} from a 5 cm planar magnetron. The ion energy distribution function for boron exhibits an energetic tail extending over several 10 eV,more » while argon shows a pronounced peak at low energy (some eV). This is in agreement with models that consider sputtering (B, La) and gas supply (from background and 'recycling'). Strong voltage oscillations develop at high current, greatly affecting power dissipation and plasma properties.« less

Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dildar, I. M.; Neklyudova, M.; Xu, Q.

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter windowmore » exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balkin, Ethan R.; Gagnon, Katherine; Strong, Kevin T.

This investigation evaluated target fabrication and beam parameters for scale-up production of high specific activity 186Re using deuteron irradiation of enriched 186W via the 186W(d,2n) 186Re reaction. Thick W and WO 3 targets were prepared, characterized and evaluated in deuteron irradiations. Full-thickness targets, as determined using SRIM, were prepared by uniaxi-ally pressing powdered natural abundance W and WO 3, or 96.86% enriched 186W, into Al target supports. Alternatively, thick targets were prepared by pressing 186W between two layers of graphite powder or by placing pre-sintered (1105°C, 12 hours) natural abundance WO 3 pellets into an Al target support. Assessments ofmore » structural integrity were made on each target pre-pared. Prior to irradiation, material composition analyses were conducted using SEM, XRD, and Raman spectroscopy. With-in a minimum of 24 hours post irradiation, gamma-ray spectroscopy was performed on all targets to assess production yields and radionuclidic byproducts. Problems were encountered with the structural integrity of some pressed W and WO 3 pellets before and during irradiation, and target material characterization results could be correlated with the structural integrity of the pressed target pellets. Under the conditions studied, the findings suggest that all WO 3 targets prepared and studied were unacceptable. By contrast, 186W metal was found to be a viable target material for 186Re production. Lastly, thick targets prepared with powdered 186W pressed between layers of graphite provided a particularly robust target configuration.« less

Label-Free Electrochemical Detection of the Specific Oligonucleotide Sequence of Dengue Virus Type 1 on Pencil Graphite Electrodes

PubMed Central

Souza, Elaine; Nascimento, Gustavo; Santana, Nataly; Ferreira, Danielly; Lima, Manoel; Natividade, Edna; Martins, Danyelly; Lima-Filho, José

2011-01-01

A biosensor that relies on the adsorption immobilization of the 18-mer single-stranded nucleic acid related to dengue virus gene 1 on activated pencil graphite was developed. Hybridization between the probe and its complementary oligonucleotides (the target) was investigated by monitoring guanine oxidation by differential pulse voltammetry (DPV). The pencil graphite electrode was made of ordinary pencil lead (type 4B). The polished surface of the working electrode was activated by applying a potential of 1.8 V for 5 min. Afterward, the dengue oligonucleotides probe was immobilized on the activated electrode by applying 0.5 V to the electrode in 0.5 M acetate buffer (pH 5.0) for 5 min. The hybridization process was carried out by incubating at the annealing temperature of the oligonucleotides. A time of five minutes and concentration of 1 μM were found to be the optimal conditions for probe immobilization. The electrochemical detection of annealing between the DNA probe (TS-1P) immobilized on the modified electrode, and the target (TS-1T) was achieved. The target could be quantified in a range from 1 to 40 nM with good linearity and a detection limit of 0.92 nM. The specificity of the electrochemical biosensor was tested using non-complementary sequences of dengue virus 2 and 3. PMID:22163916

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

NASA Astrophysics Data System (ADS)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 < x < 0.92) thin films made by radiofrequency (13.56 MHz) cathodic magnetron sputtering from composite Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less

Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

NASA Astrophysics Data System (ADS)

Tseng, Kun-San; Lo, Yu-Lung

2013-11-01

The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target-substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target-substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target-substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target-substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target-substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

PubMed Central

Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

2015-01-01

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van

2014-08-07

We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can bemore » expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.« less

Characterization of SrTiO3 target doped with Co ions, SrCoxTi1-xO3-δ, and their thin films prepared by pulsed laser ablation (PLA) in water for visible light response

NASA Astrophysics Data System (ADS)

Ichihara, Fumihiko; Murata, Yuma; Ono, Hiroshi; Choo, Cheow-keong; Tanaka, Katsumi

2017-10-01

SrTiO3 (STO) and Co-doped SrTiO3 (Co-STO) sintered targets were synthesized and were Ar+ sputtered to elucidate the charge compensation effect between Sr, Ti and Co cations following the reduction by oxygen desorption. Following exposure of the Ar+-sputtered target to the air, charge transfer reactions occurred among Co2+, Ti3+, O2- and Sr2+ species which were studied by their XPS spectra. Pulsed laser ablation (PLA) of these targets was carried out in water to prepare the nanoparticles which could be supplied to the thin films with much higher surface reactivity expected for photocatalytic reactions. The roles of Co ions were studied for the stoichiometry and crystallinity of the nanoparticles which constituted the thin films. Photo-degradation of methylene blue was carried out on the PLA thin films under very weak visible light at 460 nm. The PLA thin films showed the photocatalytic activities, which were enhanced by the presence of Co ions. Such the effect of Co ions was considered from viewpoint of the d-d transition and the charge-transfer between Co ions and the ligand oxygen.

Enhanced tunability of the composition in silicon oxynitride thin films by the reactive gas pulsing process

NASA Astrophysics Data System (ADS)

Aubry, Eric; Weber, Sylvain; Billard, Alain; Martin, Nicolas

2014-01-01

Silicon oxynitride thin films were sputter deposited by the reactive gas pulsing process. Pure silicon target was sputtered in Ar, N2 and O2 mixture atmosphere. Oxygen gas was periodically and solely introduced using exponential signals. In order to vary the injected O2 quantity in the deposition chamber during one pulse at constant injection time (TON), the tau mounting time τmou of the exponential signals was systematically changed for each deposition. Taking into account the real-time measurements of the discharge voltage and the I(O*)/I(Ar*) emission lines ratio, it is shown that the oscillations of the discharge voltage during the TON and TOFF times (injection of O2 stopped) are attributed to the preferential adsorption of the oxygen compared to that of the nitrogen. The sputtering mode alternates from a fully nitrided mode (TOFF time) to a mixed mode (nitrided and oxidized mode) during the TON time. For the highest injected O2 quantities, the mixed mode tends toward a fully oxidized mode due to an increase of the trapped oxygen on the target. The oxygen (nitrogen) concentration in the SiOxNy films similarly (inversely) varies as the oxygen is trapped. Moreover, measurements of the contamination speed of the Si target surface are connected to different behaviors of the process. At low injected O2 quantities, the nitrided mode predominates over the oxidized one during the TON time. It leads to the formation of Si3N4-yOy-like films. Inversely, the mixed mode takes place for high injected O2 quantities and the oxidized mode prevails against the nitrided one producing SiO2-xNx-like films.

Raman studies of single-walled carbon nanotubes synthesized by pulsed laser ablation at room temperature

NASA Astrophysics Data System (ADS)

Dixit, Saurabh; Shukla, A. K.

2018-06-01

In this article, single-walled carbon nanotubes (SWCNTs) are synthesized at room temperature using pulsed laser ablation of ferrocene mixed graphitic target. Radial breathing mode (RBM) reveals the presence of semiconducting SWCNTs of multiple diameters. Quantum confinement model is developed for Raman line-shape of G - feature. It is invoked here that G-feature is the manifestation of TO phonons in the semiconducting SWCNTs. Disorder in the SWCNTs is studied here as a function of the concentration of ferrocene in the graphitic target using X-ray diffraction analysis, oscillator strength of G - feature and D mode and Raman line-shape model of G - feature. Furthermore, phonon softening of G - feature of semiconducting SWCNTs is observed as a function of the diameter of nanotube.

Structure of the metallic films deposited on small spheres trapped in the rf magnetron plasma

NASA Astrophysics Data System (ADS)

Filippov, A. V.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

2016-11-01

Metallic coatings were deposited onto glass spheres having diameters from several to one hundred micrometers by the magnetron sputtering. Two different experimental schemes were exploited. One of them had the traditional configuration where a magnetron sputter was placed at one hundred millimeters from particles. In this scheme, continuous mechanical agitation in a fluidized bed was used to achieve uniformity of coatings. In the second scheme the treated particles (substrates) levitated in a magnetron rf plasma over a sputtered rf electrode (target) at the distance d of few mm from it and at gas pressure p values of 30-100 mTorr. These parameters are essentially different from those in the traditional sputtering. Agitation due to the features of a particle confinement in dusty plasma was used here to obtain uniform coatings. Thickness and morphology of the obtained coatings were studied. As it is known, film growth rate and structure are determined by the substrate temperature, the densities of ion and neutral atom fluxes to the substrate surface, the radiation flux density, and the heat energy produced due to the surface condensation of atoms and recombination of electrons and ions. These parameters particularly depend on the product of p and d. In the case of magnetron rf dusty plasma, it is possible to achieve the pd value several times lower than the lowest value proper to the first traditional case. Completely different dependencies of the film growth rate and structure on the pd value in these sputtering processes were observed and qualitatively explained.

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

Effects on crystal structure of CZTS thin films owing to deionized water and sulfurization treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nadi, Samia Ahmed; Chelvanathan, Puvaneswaran; Islam, M. A.

2015-05-15

To condense the cost and increase the production, using abundantly obtainable non-toxic elements, Cu{sub 2}ZnSnS{sub 4} (CZTS) seem to be a strong contender among the photovoltaic thin film technologies. Cu{sub 2}ZnSnS{sub 4} thin films were fabricated by RF magnetron sputtering system. CZTS were sputtered on Molybdenum (Mo) coated soda lime glass (SLG) using a single target sputtering technique. The sputtering parameters (base pressure, working pressure, Argon (Ar) flow rate, RF power and sputtering time) were kept same for all three types of films. For sulfurization, the temperature used was 500 °C. Finally, As-deposited film was immersed in DIW before undergoingmore » identical sulfurization profile. As-deposited film (Sample A), sulfurized films (Sample B) and sulfurized plus DIW treated (Sample C) were compared in terms of their structural properties by means of X-Ray Diffraction (XRD) measurement and Atomic Force Microscopy (AFM). Sample B and C showed peak of (1 1 2) planes of CZTS which are characteristics of stannite structure. Post deposition treatment on CZTS films proved to be beneficial as evident from the observed enhancement in the crystallinity and grain growth. Significant difference on grain size and area roughness could be observed from the AFM measurement. The roughness of Sample A, B and C increased from 5.007 nm to 20.509 nm and 14.183 nm accordingly. From XRD data secondary phases of Cu{sub x}MoS{sub x} could be observed.« less

Tin Sulfide Phase Exploration: Dependence of Optoelectronic Properties on Microstructural Growth and Chemical Variations in Thin Film Material

NASA Astrophysics Data System (ADS)

Banai, Rona Elinor

Herzenbergite tin (II) monosulfide (alpha-SnS) is of growing interest as a photovoltaic material because of its interesting optoelectronic properties and Earth abundance. It has several stable phases due to the dual valency of tin. As a layered material, alpha-SnS has the ability to form varying microstructure with differing properties. For this dissertation, films were RF sputtered from a SnS and SnS2 target to produce films with varying microstructure. Growth of high energy phases includin beta-SnS and amorphous SnS2 were possible through sputtering. Films of mixed or strained phase resulted from both targets. Pure phase alpha-SnS was made by annealing amorphous SnS2 films. Microstructure was measured using grazing incidence XRD and field emission SEM. The impact of microstructure was seen for both optical and electronic properties. Films were evaluated using spectroscopic ellipsometry as well as unpolarized UV-Vis transmission and reflection measurements. Optical modeling of the films is sufficient for developing models corresponding to specific microstructure, enabling it to be an inexpensive tool for studying the material. Absorption coefficient and band gap were also derived for these films. Films deposited with the SnS target had resistivity values up to 20,000 O-cm. Annealing of amorphous films deposited from the SnS2 target resulted in alpha-SnS films with much lower resistivity (<50 O-cm) values. This method for producing alpha-SnS offered better control of the phase, microstructure and therefore optoelectronic properties. While SnS films made from either target were typically p-type, sputtering of the SnS2 target with substrate heating resulted in n-type SnSx of a potentially new phase similar to SnS2 but with a 2:3 tin-to-sulfur ratio. Resistivity of those films typically ranged from 1 to 40 O-cm. Both p- and n-type films made from the SnS2 target had high carrier concentration of 10 17 to 1020 cm-3, but films had low Hall mobility such that conductivity type was not determined. Titanium, molybdenum, and aluminum contacts were tested for Ohmic and Schottky behavior using transmission line measurements. The complexity of its microstructure and flexibility in formation of varying phase and altered phase presents challenges to its use as a PV absorber.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro

Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related tomore » the interfacial stress developed on cooling from deposition temperature.« less

Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery

NASA Astrophysics Data System (ADS)

Akazawa, Housei

2016-06-01

The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery.

PubMed

Akazawa, Housei

2016-06-01

The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

High-acoustic-impedance tantalum oxide layers for insulating acoustic reflectors.

PubMed

Capilla, Jose; Olivares, Jimena; Clement, Marta; Sangrador, Jesús; Iborra, Enrique; Devos, Arnaud

2012-03-01

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended for use as high-impedance films of acoustic reflectors for solidly mounted resonators operating in the gigahertz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed dc powers, and substrate biases. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is assessed by deriving the mass density from X-ray reflectometry measurements and the acoustic velocity from picosecond acoustic spectroscopy and the analysis of the frequency response of the test resonators.

Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp

2016-06-15

The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

NASA Astrophysics Data System (ADS)

Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

2009-07-01

RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

Mechanical properties and biocompatibility of the sputtered Ti doped hydroxyapatite.

PubMed

Vladescu, A; Padmanabhan, S C; Ak Azem, F; Braic, M; Titorencu, I; Birlik, I; Morris, M A; Braic, V

2016-10-01

The hydroxyapatite enriched with Ti were prepared as possible candidates for biomedical applications especially for implantable devices that are in direct contact to the bone. The hydroxyapatites with different Ti content were prepared by RF magnetron sputtering on Ti-6Al-4V alloy using pure hydroxyapatite and TiO2 targets. The content of Ti was modified by changing the RF power fed on TiO2 target. The XPS and FTIR analyses revealed the presence of hydroxyapatite structure. The hardness and elastic modulus of the hydroxyapatite were increased by Ti addition. After 5 days of culture, the cell viability of the Ti-6Al-4V was enhanced by depositing with undoped or doped hydroxyapatite. The Ti additions led to an increase in cell viability of hydroxyapatite, after 5 days of culture. The electron microscopy showed the presence of more cells on the surface of Ti-enriched hydroxyapatite than those observed on the surface of the uncoated alloys or undoped hydroxyapatite. Copyright © 2016 Elsevier Ltd. All rights reserved.

Molecular dynamics of single-particle impacts predicts phase diagrams for large scale pattern formation.

PubMed

Norris, Scott A; Samela, Juha; Bukonte, Laura; Backman, Marie; Djurabekova, Flyura; Nordlund, Kai; Madi, Charbel S; Brenner, Michael P; Aziz, Michael J

2011-01-01

Energetic particle irradiation can cause surface ultra-smoothening, self-organized nanoscale pattern formation or degradation of the structural integrity of nuclear reactor components. A fundamental understanding of the mechanisms governing the selection among these outcomes has been elusive. Here we predict the mechanism governing the transition from pattern formation to flatness using only parameter-free molecular dynamics simulations of single-ion impacts as input into a multiscale analysis, obtaining good agreement with experiment. Our results overturn the paradigm attributing these phenomena to the removal of target atoms via sputter erosion: the mechanism dominating both stability and instability is the impact-induced redistribution of target atoms that are not sputtered away, with erosive effects being essentially irrelevant. We discuss the potential implications for the formation of a mysterious nanoscale topography, leading to surface degradation, of tungsten plasma-facing fusion reactor walls. Consideration of impact-induced redistribution processes may lead to a new design criterion for stability under irradiation.

Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusaka, Kazuya, E-mail: kusaka@tokushima-u.ac.jp; Maruoka, Yutaka, E-mail: ymaruoka1116@gmail.com; Matsue, Tatsuya, E-mail: tmatsue@mat.niihama-nct.ac.jp

2016-05-15

Zinc oxide (ZnO) films were deposited on a soft polyimide sheet substrate by radio frequency sputtering with a ZnO powder target, and the films' crystal orientations and residual stress were investigated using x-ray diffraction as a function of substrate temperature. C-axis oriented ZnO films were achieved using this ZnO powder target method. The ZnO films exhibited high compressive residual stresses between −0.7 and −1.4 GPa. Finally, the authors examined the strength of the obtained film by applying tensile bending loads. No cracks were observed on the surfaces of the ZnO films after a bending test using cylinders with diameters >25 mm. Aftermore » a bending test using a cylinder with a diameter of 19 mm, large cracks were formed on the films. Therefore, the authors concluded that the tensile bending strength of the obtained films was greater than ∼420 MPa.« less

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

NASA Astrophysics Data System (ADS)

Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

2018-04-01

Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

PubMed

Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

2018-02-15

ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

DOEpatents

Ruffner, Judith Alison

1999-01-01

A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate material can have a significant effect on adhesion and the mechanical response between the coating and substrate. Depending on deposition parameters and the selected material MPPMS and DOMS are promising alternatives to DCMS, PMS, and CAD.

Effect of deposition temperature on thermal stabilities of copper-carbon films in barrier-less Cu metallization

NASA Astrophysics Data System (ADS)

Zhu, Huan; Fu, Zhiqiang; Xie, Qi; Yue, Wen; Wang, Chengbiao; Kang, Jiajie; Zhu, Lina

2018-01-01

Copper-carbon alloy films have been applied in barrier-less Cu metallization as seed layers for improving the thermal stabilities. The effect of the deposition temperature on the microstructure and properties of C-doped Cu films on Si substrates was investigated. The films were prepared by ion beam-assisted deposition at various deposition temperatures by co-sputtering of Cu and graphite targets. No inter-diffusion between Cu and Si was observed in Cu(C) films throughout this experiment, because XRD patterns corresponding to their deep-level reaction product, namely, Cu3Si, were not observed in XRD patterns and EDS results of Cu(C) films. Amorphous carbon layer and SiC layer were found in the interface of Cu(C) as-deposited films when deposition temperature rose to 100 °C by TEM, high-resolution image and Fourier transformation pattern. The Cu(C) films deposited at 100 °C had the best thermal stabilities and the lowest electrical resistivity of 4.44 μW cm after annealing at 400 °C for 1 h. Cu agglomeration was observed in Cu(C) alloy films with deposition temperatures of 200, 300 and 400 °C, and the most serious agglomeration occurred in Cu(C) films deposited at 200 °C. Undesired Cu agglomeration resulted in a sharp increase in the resistivity after annealing at 300 °C for 1 h. The deposition temperature of 100 °C reflected the superior thermal stabilities of Cu(C) seed layers compared with those of other layers.

The current-density distribution in a pulsed dc magnetron deposition discharge

NASA Astrophysics Data System (ADS)

Vetushka, Alena; Bradley, James W.

2007-04-01

Using a carefully constructed magnetic probe (a B-dot probe) the spatial and temporal evolution of the perturbation in the magnetic field ΔB in an unbalanced pulsed dc magnetron has been determined. The plasma was run in argon at a pressure of 0.74 Pa and the plasma ions sputtered a pure graphite target. The pulse frequency and duty were set at 100 kHz and 55%, respectively. From the ΔB measurements (measured with magnitudes up to about 0.01 mT) the axial, azimuthal and radial components of the total current density j in the plasma bulk were determined. In the plasma 'on' phase, the axial current density jz has a maximum value of approximately 200 A m-2 above the racetrack region, while high values in the azimuthal current density jΦ are distributed in a region from 1 to 3 cm into the bulk plasma with jΦ exceeding 350 A m-2. In the 'off' phase of the plasma, jz decays almost instantaneously (at least within the 100 ns time-resolution of the ΔB measurements) as the electric field collapses; however, jΦ decays with a characteristic time constant of about 1 µs. This slow decay can be attributed to the presence of decaying Grad-B and curvature drifts, with their rates controlled by the decay in the plasma density. A comparison between axial and azimuthal current densities in the plasma 'on' time, when the plasma is being driven, strongly indicates that classical transport does not operate in the magnetron discharge.

Development of a Scanning Microscale Fast Neutron Irradiation Platform for Examining the Correlation Between Local Neutron Damage and Graphite Microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pinhero, Patrick; Windes, William

2015-03-10

The fast particle radiation damage effect of graphite, a main material in current and future nuclear reactors, has significant influence on the utilization of this material in fission and fusion plants. Atoms on graphite crystals can be easily replaced or dislocated by fast protons and result in interstitials and vacancies. The currently accepted model indicates that after most of the interstitials recombine with vacancies, surviving interstitials form clusters and furthermore gather to create loops with each other between layers. Meanwhile, surviving vacancies and interstitials form dislocation loops on the layers. The growth of these inserted layers cause the dimensional increase,more » i.e. swelling, of graphite. Interstitial and vacancy dislocation loops have been reported and they can easily been observed by electron microscope. However, observation of the intermediate atom clusters becomes is paramount in helping prove this model. We utilize fast protons generated from the University of Missouri Research Reactor (MURR) cyclotron to irradiate highly- oriented pyrolytic graphite (HOPG) as target for this research. Post-irradiation examination (PIE) of dosed targets with high-resolution transmission electron microscopy (HRTEM) has permit observation and analysis of clusters and dislocation loops to support the proposed theory. Another part of the research is to validate M.I. Heggie’s Ruck and Tuck model, which introduced graphite layers may fold under fast particle irradiation. Again, we employed microscopy to image irradiated specimens to determine how the extent of Ruck and Tuck by calculating the number of folds as a function of dose. Our most significant accomplishment is the invention of a novel class of high-intensity pure beta-emitters for long-term lightweight batteries. We have filed four invention disclosure records based on the research conducted in this project. These batteries are lightweight because they consist of carbon and tritium and can be fabricated to conform to many geometric shapes. In addition, we have published eight peer-reviewed American Nuclear Society (ANS) transactions, and presented our findings at ANS National Meetings, and several universities.« less

Deuteron irradiation of W and WO 3 for production of high specific activity 186Re: Challenges associated with thick target preparation

DOE PAGES

Balkin, Ethan R.; Gagnon, Katherine; Strong, Kevin T.; ...

2016-06-28

This investigation evaluated target fabrication and beam parameters for scale-up production of high specific activity 186Re using deuteron irradiation of enriched 186W via the 186W(d,2n) 186Re reaction. Thick W and WO 3 targets were prepared, characterized and evaluated in deuteron irradiations. Full-thickness targets, as determined using SRIM, were prepared by uniaxi-ally pressing powdered natural abundance W and WO 3, or 96.86% enriched 186W, into Al target supports. Alternatively, thick targets were prepared by pressing 186W between two layers of graphite powder or by placing pre-sintered (1105°C, 12 hours) natural abundance WO 3 pellets into an Al target support. Assessments ofmore » structural integrity were made on each target pre-pared. Prior to irradiation, material composition analyses were conducted using SEM, XRD, and Raman spectroscopy. With-in a minimum of 24 hours post irradiation, gamma-ray spectroscopy was performed on all targets to assess production yields and radionuclidic byproducts. Problems were encountered with the structural integrity of some pressed W and WO 3 pellets before and during irradiation, and target material characterization results could be correlated with the structural integrity of the pressed target pellets. Under the conditions studied, the findings suggest that all WO 3 targets prepared and studied were unacceptable. By contrast, 186W metal was found to be a viable target material for 186Re production. Lastly, thick targets prepared with powdered 186W pressed between layers of graphite provided a particularly robust target configuration.« less

Deuteron irradiation of W and WO3 for production of high specific activity (186)Re: Challenges associated with thick target preparation.

PubMed

Balkin, Ethan R; Gagnon, Katherine; Strong, Kevin T; Smith, Bennett E; Dorman, Eric F; Emery, Robert C; Pauzauskie, Peter J; Fassbender, Michael E; Cutler, Cathy S; Ketring, Alan R; Jurisson, Silvia S; Wilbur, D Scott

2016-09-01

This investigation evaluated target fabrication and beam parameters for scale-up production of high specific activity (186)Re using deuteron irradiation of enriched (186)W via the (186)W(d,2n)(186)Re reaction. Thick W and WO3 targets were prepared, characterized and evaluated in deuteron irradiations. Full-thickness targets, as determined using SRIM, were prepared by uniaxially pressing powdered natural abundance W and WO3, or 96.86% enriched (186)W, into Al target supports. Alternatively, thick targets were prepared by pressing (186)W between two layers of graphite powder or by placing pre-sintered (1105°C, 12h) natural abundance WO3 pellets into an Al target support. Assessments of structural integrity were made on each target prepared. Prior to irradiation, material composition analyses were conducted using SEM, XRD, and Raman spectroscopy. Within a minimum of 24h post irradiation, gamma-ray spectroscopy was performed on all targets to assess production yields and radionuclidic byproducts. Problems were encountered with the structural integrity of some pressed W and WO3 pellets before and during irradiation, and target material characterization results could be correlated with the structural integrity of the pressed target pellets. Under the conditions studied, the findings suggest that all WO3 targets prepared and studied were unacceptable. By contrast, (186)W metal was found to be a viable target material for (186)Re production. Thick targets prepared with powdered (186)W pressed between layers of graphite provided a particularly robust target configuration. Copyright © 2016 Elsevier Ltd. All rights reserved.

High rate reactive sputtering of MoN(x) coatings

NASA Technical Reports Server (NTRS)

Rudnik, Paul J.; Graham, Michael E.; Sproul, William D.

1991-01-01

High rate reactive sputtering of MoN(x) films was performed using feedback control of the nitorgen partial pressure. Coatings were made at four different target powers: 2.5, 5.0, 7.5 and 10 kW. No hysteresis was observed in the nitrogen partial pressure vs. flow plot, as is typically seen for the Ti-N system. Four phases were determined by X-ray diffraction: molybdenum, Mo-N solid solution, Beta-Mo2N and gamma-Mo2N. The hardness of the coatings depended upon composition, substrate bias, and target power. The phases present in the hardest films differed depending upon deposition parameters. For example, the Beta-Mo2N phase was hardest (load 25 gf) at 5.0 kW with a value of 3200 kgf/sq mm, whereas the hardest coatings at 10 kW were the gamma-Mo2N phase (3000 kgf/sq mm). The deposition rate generally decreased with increasing nitrogen partial pressure, but there was a range of partial pressures where the rate was relatively constant. At a target power of 5.0 kW, for example, the deposition rates were 3300 A/min for a N2 partial pressure of 0.05 - 1.0 mTorr.

Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

NASA Astrophysics Data System (ADS)

Sumiyama, Takashi; Fukumoto, Takaya; Ohtsu, Yasunori; Tabaru, Tatsuo

2017-05-01

Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 - 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002) axis.