Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

NASA Astrophysics Data System (ADS)

Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

2017-06-01

The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

NASA Astrophysics Data System (ADS)

Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro

1999-11-01

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

NASA Astrophysics Data System (ADS)

Salas, R.; Guchhait, S.; Sifferman, S. D.; McNicholas, K. M.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

2017-09-01

We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ˜25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors.

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

NASA Astrophysics Data System (ADS)

Khosravi, Ava; Addou, Rafik; Smyth, Christopher M.; Yue, Ruoyu; Cormier, Christopher R.; Kim, Jiyoung; Hinkle, Christopher L.; Wallace, Robert M.

2018-02-01

Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2 lattice as well as tunable nitrogen concentration with N2 plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe2 lattice after N2 plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N2 plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates

NASA Astrophysics Data System (ADS)

Galiev, G. B.; Klimova, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Trunkin, I. N.; Vasiliev, A. L.; Maltsev, P. P.

2017-07-01

The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411) A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411) A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411) A substrates into polycrystalline ones.

Reliability testing of ultra-low noise InGaAs quad photoreceivers

NASA Astrophysics Data System (ADS)

Joshi, Abhay M.; Datta, Shubhashish; Prasad, Narasimha; Sivertz, Michael

2018-02-01

We have developed ultra-low noise quadrant InGaAs photoreceivers for multiple applications ranging from Laser Interferometric Gravitional Wave Detection, to 3D Wind Profiling. Devices with diameters of 0.5 mm, 1mm, and 2 mm were processed, with the nominal capacitance of a single quadrant of a 1 mm quad photodiode being 2.5 pF. The 1 mm diameter InGaAs quad photoreceivers, using a low-noise, bipolar-input OpAmp circuitry exhibit an equivalent input noise per quadrant of <1.7 pA/√Hz in 2 to 20 MHz frequency range. The InGaAs Quad Photoreceivers have undergone the following reliability tests: 30 MeV Proton Radiation up to a Total Ionizing Dose (TID) of 50 krad, Mechanical Shock, and Sinusoidal Vibration.

Electron and proton damage on InGaAs solar cells having an InP window layer

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Cotal, Hector L.; Walters, Robert J.; Summers, Geoffrey P.

1995-01-01

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

InGaAs detectors and FPA's for a large span of applications: design and material considerations

NASA Astrophysics Data System (ADS)

Vermeiren, J. P.; Merken, P.

2017-11-01

Compared with the other Infrared detector materials, such as HgCdTe (or MCT) and lead salts (e.g.: PbS, PbSe, PbSnTe, …), the history of InGaAs FPA's is not that old. Some 25 years ago the first linear detectors were used for space missions [1,2]. During the last 15-20 years InGaAs, grown lattice matched on InP, has become the work horse for the telecommunication industry [3] and later on for passive and active imagery in the SWIR range. For longer wavelengths than 1.7 μm, III-V materials are in strong competition with SWIR MCT and till now the performance of MCT is better than high In-content InGaAs. During the last years some alternatives based on quaternary materials [4] and on Superlattice structures [5] are making gradual progress in such a way that they can yield performing Focal planes in the (near) future. As the SWIR wavelengths range covers a large variety of applications, also the FPA characteristics and mainly the ROIC properties need to be adjusted to fulfil the mission requirements with the requested performance. Additionally one has to bear in mind that the nature of SWIR radiation is completely different from what is usually encountered in IR imaging. Whereas the signal of thermal imagery in the Middle Wavelength (MWIR: [3 - 5 μm]) or Long Wavelength (LWIR: [8 - 10 μm] or [8 - 12 μm]) band is characterized by a large DC pedestal, caused by objects at ambient temperature, and a small AC signal, due to the small temperature or emissivity variations, SWIR range imagery is characterized by a large dynamic range and almost no DC signal. In this sense the SWIR imagery is resembling more the nature of Visible and NIR imaging than that of thermal imagery.

Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

NASA Astrophysics Data System (ADS)

Wen, Hanqing; Bellotti, Enrico

2016-05-01

Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for InxGa1-xAs grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Low dark current InGaAs detector arrays for night vision and astronomy

NASA Astrophysics Data System (ADS)

MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

2009-05-01

Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

NASA Technical Reports Server (NTRS)

Tatsumi, Masami

1993-01-01

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs

Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.-Y., E-mail: cychang@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectivenessmore » of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.« less

Singlemode 1.1 μm InGaAs quantum well microstructured photonic crystal VCSEL

NASA Astrophysics Data System (ADS)

Stevens, Renaud; Gilet, Philippe; Larrue, Alexandre; Grenouillet, Laurent; Olivier, Nicolas; Grosse, Philippe; Gilbert, Karen; Teysseyre, Raphael; Chelnokov, Alexei

2008-02-01

In this article, we present our results on long wavelength (1.1 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode roomtemperature continuous-wave lasing operation was demonstrated for devices designed and processed with a number of different two-dimensional etched patterns. The conventional epitaxial structure was grown by Molecular Beam Epitaxy (MBE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. At room temperature and in continuous wave operation, micro-structured 50 µm diameter mesa VCSELs with 10 μm oxidation aperture exhibited more than 1 mW optical power, 2 to 5 mA threshold currents and more than 30 dB side mode suppression ratio at a wavelength of 1090 nm. These structures show slight power reduction but similar electrical performances than unstructured devices. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at extended wavelength range.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Hanqing; Bellotti, Enrico, E-mail: bellotti@bu.edu

2016-05-28

Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for In{sub x}Ga{submore » 1−x}As grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.« less

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors

DTIC Science & Technology

2009-03-01

metalorganic vapour phase epitaxial grown (MOVPE) InxGa1-xSb with indium mole fractions less than 0.06. [28] They observed that GaSb and InxGa1-xSb had...Treideris, A. Krotkus, and K. Grigoras, “Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour ...Time Dependent Annealing Study of Silicon Implanted Aluminum Gallium Nitride,” Master’s Thesis, Air Force Institute of Technology (AU), Wright

Metastable growth of pure wurtzite InGaAs microstructures.

PubMed

Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

2014-08-13

III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.

InGaAs focal plane array developments at III-V Lab

NASA Astrophysics Data System (ADS)

Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

2012-06-01

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

Modeling direct interband tunneling. I. Bulk semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Andrew, E-mail: pandrew@ucla.edu; Chui, Chi On; California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095

Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority ofmore » the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.« less

Evaluation of InGaAS array detector suitability to space environment

NASA Astrophysics Data System (ADS)

Tauziede, L.; Beulé, K.; Boutillier, M.; Bernard, F.; Reverchon, J.-L.; Buffaz, A.

2017-11-01

InGaAs material has a natural cutoff wavelength of 1.65µm so it is naturally suitable for detection in Short Wavelength InfraRed (SWIR) spectral range. Regarding Earth Observation Spacecraft missions this spectral range can be used for the CO2 concentration measurements in the atmosphere. CNES (French Space agency) is studying a new mission, Microcarb with a spectral band centered on 1.6µm wavelength. InGaAs detector looks attractive for space application because its low dark current allows high temperature operation, reducing by the way the needed instrument resources. The Alcatel Thales III-VLab group has developed InGaAs arrays technology (320x256 & 640x512) that has been studied by CNES, using internal facilities. Performance tests and technological evaluation were performed on a 320x256 pixels array with a pitch of 30µm. The aim of this evaluation was to assess this new technology suitability for space applications. The carried out test plan includes proton radiations with Random Telegraph Signal (RTS) study, operating lifetest and evolution of performances as a function of the operating temperature.

Bond-strength inversion in (In,Ga)As semiconductor alloys

NASA Astrophysics Data System (ADS)

Eckner, Stefanie; Ritter, Konrad; Schöppe, Philipp; Haubold, Erik; Eckner, Erich; Rensberg, Jura; Röder, Robert; Ridgway, Mark C.; Schnohr, Claudia S.

2018-05-01

The atomic-scale structure and vibrational properties of semiconductor alloys are determined by the energy required for stretching and bending the individual bonds. Using temperature-dependent extended x-ray absorption fine-structure spectroscopy, we have determined the element-specific In-As and Ga-As effective bond-stretching force constants in (In,Ga)As as a function of the alloy composition. The results reveal a striking inversion of the bond strength where the originally stiffer bond in the parent materials becomes the softer bond in the alloy and vice versa. Our findings clearly demonstrate that changes of both the individual bond length and the surrounding matrix affect the bond-stretching force constants. We thus show that the previously used common assumptions about the element-specific force constants in semiconductor alloys do not reproduce the composition dependence determined experimentally for (In,Ga)As.

High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2010-12-24

nano-thick Al2O3, HfO2, and Ga2O3 (Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron...aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE- grown Al2O3/ Ga2O3 (Gd2O3) Chips integrating high κ’s/InGaAs and /Ge onto Si substrates have...using molecular beam epitaxy (MBE)-Al2O3/ Ga2O3 (Gd2O3) [GGO] and atomic layer deposited (ALD)-Al2O3, with gate lengths (LG) of 1 μm and 0.4 μm

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

640x512 pixel InGaAs FPAs for short-wave infrared and visible light imaging

NASA Astrophysics Data System (ADS)

Shao, Xiumei; Yang, Bo; Huang, Songlei; Wei, Yang; Li, Xue; Zhu, Xianliang; Li, Tao; Chen, Yu; Gong, Haimei

2017-08-01

The spectral irradiance of moonlight and air glow is mainly in the wavelength region from visible to short-wave infrared (SWIR) band. The imaging over the wavelength range of visible to SWIR is of great significance for applications such as civil safety, night vision, and agricultural sorting. In this paper, 640×512 visible-SWIR InGaAs focal plane arrays (FPAs) were studied for night vision and SWIR imaging. A special epitaxial wafer structure with etch-stop layer was designed and developed. Planar-type 640×512 InGaAs detector arrays were fabricated. The photosensitive arrays were bonded with readout circuit through Indium bumps by flip-chip process. Then, the InP substrate was removed by mechanical thinning and chemical wet etching. The visible irradiance can reach InGaAs absorption layer and then to be detected. As a result, the detection spectrum of the InGaAs FPAs has been extended toward visible spectrum from 0.5μm to 1.7μm. The quantum efficiency is approximately 15% at 0.5μm, 30% at 0.7μm, 50% at 0.8μm, 90% at 1.55μm. The average peak detectivity is higher than 2×1012 cm·Hz1/2/W at room temperature with an integrated time of 10 ms. The Visible-SWIR InGaAs FPAs were applied to an imaging system for SWIR and visible light imaging.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes

NASA Astrophysics Data System (ADS)

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-01

Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000nm and 1600nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes.

PubMed

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-27

Quantum key distribution (QKD) at telecom wavelengths (1260 - 1625 nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, Indium Gallium Arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their Silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000 nm and 1600 nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Life test of the InGaAs focal plane arrays detector for space applications

NASA Astrophysics Data System (ADS)

Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

2017-08-01

The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

Nanophotonic integrated circuits from nanoresonators grown on silicon.

PubMed

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

InGaAs concentrator cells for laser power converters and tandem cells

NASA Technical Reports Server (NTRS)

Wojtczuk, S.; Vernon, S.; Gagnon, E.

1993-01-01

In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

NASA Astrophysics Data System (ADS)

Sugiyama, Hiroki; Kosugi, Toshihiko; Yokoyama, Haruki; Murata, Koichi; Yamane, Yasuro; Tokumitsu, Masami; Enoki, Takatomo

2008-04-01

This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on- and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ( fT) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.

Low-dark current 1024×1280 InGaAs PIN arrays

NASA Astrophysics Data System (ADS)

Yuan, Ping; Chang, James; Boisvert, Joseph C.; Karam, Nasser

2014-06-01

Photon counting imaging applications requires low noise from both detector and readout integrated circuit (ROIC) arrays. In order to retain the photon-counting-level sensitivity, a long integration time has to be employed and the dark current has to be minimized. It is well known that the PIN dark current is sensitive to temperature and a dark current density of 0.5 nA/cm2 was demonstrated at 7 °C previously. In order to restrain the size, weight, and power consumption (SWaP) of cameras for persistent large-area surveillance on small platforms, it is critical to develop large format PIN arrays with small pitch and low dark current density at higher operation temperatures. Recently Spectrolab has grown, fabricated and tested 1024x1280 InGaAs PIN arrays with 12.5 μm pitch and achieved 0.7 nA/cm2 dark current density at 15 °C. Based on our previous low-dark-current PIN designs, the improvements were focused on 1) the epitaxial material design and growth control; and 2) PIN device structure to minimize the perimeter leakage current and junction diffusion current. We will present characterization data and analyses that illustrate the contribution of various dark current mechanisms.

Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, Matthias, E-mail: m.paul@ihfg.uni-stuttgart.de; Kettler, Jan; Zeuner, Katharina

By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

2000-01-01

Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

NASA Astrophysics Data System (ADS)

Wang, Buguo; Claflin, Bruce; Look, David; Jiménez, Juan

2018-02-01

Indium-doped ZnO bulk crystals grown by the hydrothermal method are highly-conductive, with resistivity at 0.01 Ωcm at room temperature as revealed by Hall-effect measurement. In this paper we report on structural and optical properties of these crystals. The grown In:ZnO crystals have been studied by high resolution X-ray diffraction, micro-Raman scattering and low-temperature photoluminescence and cathodoluminescence. It was found that the c lattice parameter of the grown In:ZnO crystal expanded 0.06% with respect to the lithium-doped ZnO crystal seed, and the In-doped ZnO overgrew the seed crystal pseudomorphically but with high quality crystallinity; the X-ray rocking curves show the FWHM of the Zn face and O faces are only 0.05° and 0.1° ; and the indium concentration in the crystal reaches the solubility limit. Raman spectra show strain relaxation gradually from the regrowth interface as well as a weak spectral feature at 723 cm-1. The peak at 312 cm-1 noticed in hydrothermally grown In:ZnO nanostructures does not appear in our In-doped crystals, indicating that this peak may be associated with specific defects (e.g. surface related) of the nanostructures. Photoluminescence measurements show that an indium donor bound exciton peak I9 (In0X) is the dominant peak in the PL spectrum, located at 3.3586 eV on the zinc face and 3.3577 eV on the oxygen face. Both of them deviated from the consensus literature value of 3.3567 eV, probably due to strain in the crystal induced by impurities.

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

NASA Astrophysics Data System (ADS)

Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

1996-09-01

This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

WOCSDICE 94 - European Workshop on Compound Semiconductor Devices and Integrated Circuits (18th) Held in Kinsale, Ireland on 29 May-1 June 1994

DTIC Science & Technology

1994-06-01

Taskert, M. Demmiler, J. Braunsteint, B. Hughes* and E. SAnchez Dpto. Tecnologfas de las Comunicaciones , Universidad de Vigo, E-36200 Vigo, Spain. Phone...Typical Hall mobilities of MOVPE and MBE grown lattice matched HFET layers 20 InGaAs 10 nm- Vg- 0.4V 60015estimated bulk InA LAs 20 nm 15 sl’,e-rai...P measured 0.3 R measured 1-ti) Rs ~~~0.4 .. .....7. ....... -. C simulated 0.2 C measured 0.1 La ~ ~0.2

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

NASA Astrophysics Data System (ADS)

Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, Junichi

2017-12-01

Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a μm-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio.

Liquid phase electroepitaxial bulk growth of binary and ternary alloy semiconductors under external magnetic field

NASA Astrophysics Data System (ADS)

Sheibani, Hamdi

2002-01-01

Liquid Phase Electroepitaxy (LPEE) and is a relatively new, promising technique for producing high quality, thick compound semiconductors and their alloys. The main objectives are to reduce the adverse effect of natural convection and to determine the optimum growth conditions for reproducible desired crystals for the optoelectronic and electronic device industry. Among the available techniques for suppressing the adverse effect of natural convection, the application of an external magnetic field seems the most feasible one. The research work in this dissertation consists of two parts. The first part is focused on the design and development of a state of the art LPEE facility with a novel crucible design, that can produce bulk crystals of quality higher than those achieved by the existing LPEE system. A growth procedure was developed to take advantage of this novel crucible design. The research of the growth of InGaAs single crystals presented in this thesis will be a basis for the future LPEE growth of other important material and is an ideal vehicle for the development of a ternary crystal growth process. The second part of the research program is the experimental study of the LPEE growth process of high quality bulk single crystals of binary/ternary semiconductors under applied magnetic field. The compositional uniformity of grown crystals was measured by Electron Probe Micro-analysis (EPMA) and X-ray microanalysis. The state-of-the-art LPEE system developed at University of Victoria, because of its novel design features, has achieved a growth rate of about 4.5 mm/day (with the application of an external fixed magnetic field of 4.5 KGauss and 3 A/cm2 electric current density), and a growth rate of about 11 mm/day (with 4.5 KGauss magnetic field and 7 A/cm2 electric current density). This achievement is simply a breakthrough in LPEE, making this growth technique absolutely a bulk growth technique and putting it in competition with other bulk growth techniques

Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

NASA Astrophysics Data System (ADS)

Salas, R.; Guchhait, S.; Sifferman, S. D.; McNicholas, K. M.; Dasika, V. D.; Krivoy, E. M.; Jung, D.; Lee, M. L.; Bank, S. R.

2015-02-01

We explore the electrical, optical, and structural properties of fast photoconductors of In0.53Ga0.47As containing a number of different rare-earth arsenide nanostructures. The rare-earth species provides a route to tailor the properties of the photoconductive materials. LuAs, GdAs, and LaAs nanostructures were embedded into InGaAs in a superlattice structure and compared to the relatively well-studied ErAs:InGaAs system. LaAs:InGaAs was found to have the highest dark resistivities, while GdAs:InGaAs had the lowest carrier lifetimes and highest carrier mobility at moderate depositions. The quality of the InGaAs overgrowth appears to have the most significant effect on the properties of these candidate fast photoconductors.

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

NASA Technical Reports Server (NTRS)

Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

2007-01-01

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

NASA Technical Reports Server (NTRS)

Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Jain, Raj K.; Murray, Christopher S.; Riley, David R.

1997-01-01

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

PubMed

Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

2018-02-19

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

NASA Astrophysics Data System (ADS)

Lü, Hai-Yan; Mu, Qi; Zhang, Lei; Lü, Yuan-Jie; Ji, Zi-Wu; Feng, Zhi-Hong; Xu, Xian-Gang; Guo, Qi-Xin

2015-12-01

Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal. Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

Internal stress-assisted epitaxial lift-off process for flexible thin film (In)GaAs solar cells on metal foil

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Jung, Sang Hyun; Kim, Chang Zoo; Shin, Hyun-Beom; Choi, JeHyuk; Kang, Ho Kwan

2017-12-01

Flexible thin film (In)GaAs solar cells are grown by metalorganic chemical vapor deposition on GaAs substrates and transferred to 30 μm thick Au foil by internal stress-assisted epitaxial lift-off processes. The internal stress is induced by replacing the solar cell epi-layers from GaAs to In0.015Ga0.985As, which has a slightly larger lattice constant. The compressive strained layer thickness was varied from 0 to 4.5 μm to investigate the influence of the internal stress on the epitaxial lift-off time. The etching time in the epitaxial lift-off process was reduced from 36 to 4 h by employing a GaAs/In0.015Ga0.985As heterojunction structure that has a compressive film stress of -59.0 MPa. We found that the partially strained epi-structure contributed to the much faster lateral etching rate with spontaneous bending. Although an efficiency degradation problem occurred in the strained solar cell, it was solved by optimizing the epitaxial growth conditions.

Junctionless tri-gate InGaAs MOSFETs

NASA Astrophysics Data System (ADS)

Zota, Cezar B.; Borg, Mattias; Wernersson, Lars-Erik; Lind, Erik

2017-12-01

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 × 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 × 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mS/µm and I ON = 160 µA/µm (at I OFF = 100 nA/µm and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khromov, S.; Hemmingsson, C.; Monemar, B.

2014-12-14

Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits,more » quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 10{sup 17} cm{sup −3} is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission.« less

Noise characteristics analysis of short wave infrared InGaAs focal plane arrays

NASA Astrophysics Data System (ADS)

Yu, Chunlei; Li, Xue; Yang, Bo; Huang, Songlei; Shao, Xiumei; Zhang, Yaguang; Gong, Haimei

2017-09-01

The increasing application of InGaAs short wave infrared (SWIR) focal plane arrays (FPAs) in low light level imaging requires ultra-low noise FPAs. This paper presents the theoretical analysis of FPA noise, and point out that both dark current and detector capacitance strongly affect the FPA noise. The impact of dark current and detector capacitance on FPA noise is compared in different situations. In order to obtain low noise performance FPAs, the demand for reducing detector capacitance is higher especially when pixel pitch is smaller, integration time is shorter, and integration capacitance is larger. Several InGaAs FPAs were measured and analyzed, the experiments' results could be well fitted to the calculated results. The study found that the major contributor of FPA noise is coupled noise with shorter integration time. The influence of detector capacitance on FPA noise is more significant than that of dark current. To investigate the effect of detector performance on FPA noise, two kinds of photodiodes with different concentration of the absorption layer were fabricated. The detectors' performance and noise characteristics were measured and analyzed, the results are consistent with that of theoretical analysis.

Large Diameter, High Speed InGaAs Receivers for Free-Space Lasercom

DTIC Science & Technology

2007-01-01

appropriate transimpedance amplifier and limiting amplifier . Development and testing of the APD receivers will be described below. 15. SUBJECT TERMS 16...available transimpedance amplifiers (TIA) from Maxim of Dallas. There have also been several devices built in house by NRL in 8-pin TO-39 headers...manufacture a large area, high speed InGaAs APD with an effective ionization ratio of < 0.2 and by matching the APD device with an appropriate transimpedance

Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

NASA Astrophysics Data System (ADS)

Salas, R.; Guchhait, S.; McNicholas, K. M.; Sifferman, S. D.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

2016-05-01

We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In0.53Ga0.47As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to ˜15× while carrier mobility remained over 2300 cm2/V-s and carrier lifetimes were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

Polarization-dependent Rabi oscillations in single InGaAs quantum dots

NASA Astrophysics Data System (ADS)

Besombes, L.; Baumberg, J. J.; Motohisa, J.

2004-04-01

Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.

Large-format InGaAs focal plane arrays for SWIR imaging

NASA Astrophysics Data System (ADS)

Hood, Andrew D.; MacDougal, Michael H.; Manzo, Juan; Follman, David; Geske, Jonathan C.

2012-06-01

FLIR Electro Optical Components will present our latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. FLIR will present imaging from their latest small pitch (15 μm) focal plane arrays in VGA and High Definition (HD) formats. FLIR will present characterization of the FPA including dark current measurements as well as the use of correlated double sampling to reduce read noise. FLIR will show imagery as well as FPA-level characterization data.

Improvement in trapped fields by stacking bulk superconductors

NASA Astrophysics Data System (ADS)

Suzuki, A.; Wongsatanawarid, A.; Seki, H.; Murakami, M.

2009-10-01

We studied the effects of stacking several bulk superconductor blocks on the field trapping properties. In order to avoid the detrimental effects of the bottom deteriorated parts, bulk Dy-Ba-Cu-O superconductors 45 mm in diameter and 10 mm in thickness were cut from the top parts of as-grown bulk blocks of 25 mm diameter. We stacked the superconductors and measured the field distribution as a function of the gap. The trapped field measurements were performed by field-cooling the samples inserted in between two permanent magnets with liquid nitrogen. It was found that the trapped field values are almost doubled when the number of stacked bulk superconductors increased from two to three. The present results clearly show that one can expect beneficial effects of increasing the ratio of the height to the diameter even in bulk high temperature superconductors.

Interface Shape and Growth Rate Analysis of Se/GaAs Bulk Crystals Grown in the NASA Crystal Growth Furnace (CGF)

NASA Technical Reports Server (NTRS)

Bly, J. M.; Kaforey, M. L.; Matthiesen, D. H.; Chait, A.

1997-01-01

Selenium-doped gallium arsenide, Se/GaAs, bulk crystals have been grown on earth using NASA's crystal growth furnace (CGF) in preparation for microgravity experimentation on the USML-2 spacelab mission. Peltier cooling pulses of 50 ms duration, 2040 A magnitude, and 0.0033 Hz frequency were used to successfully demark the melt-solid interface at known times during the crystal growth process. Post-growth characterization included interface shape measurement, growth rate calculation, and growth rate transient determinations. It was found that the interface shapes were always slightly concave into the solid. The curvature of the seeding interfaces was typically 1.5 mm for the 15 mm diameter samples. This was in agreement with the predicted interface shapes and positions relative to the furnace determined using a numerical model of the sample/ampoule/cartridge assembly (SACA).

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

NASA Astrophysics Data System (ADS)

Su, Y. K.; Chen, W. C.; Wan, C. T.; Yu, H. C.; Chuang, R. W.; Tsai, M. C.; Cheng, K. Y.; Hu, C.; Tsau, Seth

2008-07-01

In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In 0.39Ga 0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm 2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm 2. The fitted characteristic temperature ( T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In 0.42Ga 0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bashir, Umar; Hassan, Zainuriah; Ahmed, Naser M.; Afzal, Naveed

2018-05-01

Indium nitride (InN) films were grown on Si (111), bulk GaN, quartz and sapphire substrates by radio frequency magnetron sputtering. Prior to the film deposition, a zinc oxide (ZnO) buffer layer was deposited on all the substrates. The x-ray diffraction patterns of InN films on ZnO-buffered substrates indicated c-plane-oriented films whereas the Raman spectroscopy results indicated A1 (LO) and E2 (high) modes of InN on all the substrates. The crystalline quality of InN was found to be better on sapphire and quartz than on the other substrates. The surface roughness of InN was studied using an atomic force microscope. The results indicated higher surface roughness of the film on sapphire as compared to the others; however, roughness of the film was lower than 8 nm on all the substrates. The electrical properties indicated higher electron mobility of InN (20.20 cm2/Vs) on bulk GaN than on the other substrates. The optical band gap of InN film was more than 2 eV in all the cases and was attributed to high carrier concentration in the film.

InGaAs focal plane arrays for low-light-level SWIR imaging

NASA Astrophysics Data System (ADS)

MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

2011-06-01

Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

DOE PAGES

S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

2016-04-27

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth

NASA Astrophysics Data System (ADS)

Schelhase, S.; Böttcher, J.; Gibis, R.; Künzel, H.; Paraskevopoulos, A.

1996-07-01

MOMBE selective infill growth (SIG) of silicon-doped InP and InGaAs was investigated by variation of the principal growth parameters, i.e. temperature, {V}/{III}- ratio and rate. Excellent surface morphology in conjunction with perfect selectivity and defect-free vertical interfaces between the grown layer and the etched substrate sidewall was achieved by an appropriate optimization of the selective growth conditions for InP as well as, for the first time, InGaAs. In the case of SIG of InP, smooth growth boundaries were obtained in the [01¯1] direction, whereas in the [01¯1¯] direction minor growth perturbations occur, which are related to a strong orientation dependent diffusion behavior of the growth species on the growth front. In the case of SIG of InGaAs, slight perturbations accompanied by facet formation at the edges of the selectively grown windows were observed. In the perspective of device application, homogeneous large area MOMBE InGaAs regrowth of the embedded structures was successfully achieved.

Fracture Toughness Properties of Gd123 Superconducting Bulks

NASA Astrophysics Data System (ADS)

Fujimoto, H.; Murakami, A.

Fracture toughness properties of melt growth GdBa2Cu3Ox (Gd123) large single domain superconducting bulks with Ag2O of 10 wt% and Pt of 0.5 wt%; 45 mm in diameter and 25 mm in thickness with low void density were evaluated at 77 K through flexural tests of specimens cut from the bulks, and compared to those of a conventional Gd123 with voids. The densified Gd123 bulks were prepared with a seeding and temperature gradient method; first melt processed in oxygen, then crystal growth in air; two-step regulated atmosphere heat treatment. The plane strain fracture toughness, KIC was obtained by the three point flexure test of the specimens with through precrack, referring to the single edge pre-cracked beam (SEPB) method, according to the JIS-R-1607, Testing Methods for Fracture Toughness of High Performance Ceramics. The results show that the fracture toughness of the densified Gd123 bulk with low void density was higher than that of the standard Gd123 bulk with voids, as well as the flexural strength previously reported. We also compared the fracture toughness of as-grown bulks with that of annealed bulks. The relation between the microstructure and the fracture toughness of the Gd123 bulk was clearly shown.

Low temperature performance of a commercially available InGaAs image sensor

NASA Astrophysics Data System (ADS)

Nakaya, Hidehiko; Komiyama, Yutaka; Kashikawa, Nobunari; Uchida, Tomohisa; Nagayama, Takahiro; Yoshida, Michitoshi

2016-08-01

We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e- and 20 e- /sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.

Multijunction InGaAs thermophotovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.

1998-12-31

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. MIMs were fabricated with an active area of 0.9 {times} 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55more » eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV MIMs demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. Electrical performance results for these MIMs are presented.« less

The {alpha}-particle excited scintillation response of the liquid phase epitaxy grown LuAG:Ce thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prusa, P.; Cechak, T.; Mares, J. A.

2008-01-28

Liquid phase epitaxy grown Lu{sub 3}Al{sub 5}O{sub 12}:Ce (LuAG:Ce) 20 {mu}m thick films and plate cut from the bulk Czochralski-grown LuAG:Ce crystal were prepared for comparison of photoelectron yield (PhY) and PhY dependence on shaping time (0.5-10 {mu}s). {sup 241}Am ({alpha} particles) was used for excitation. At the 0.5 {mu}s shaping time, the best film shows comparable PhY with the bulk sample. PhY of bulk material increases noticeably more with shaping time than that of the films. Energy resolution of films is better. Influence of Pb{sup 2+} contamination in the films (from the flux) and antisite Lu{sub Al} defect inmore » bulk material is discussed.« less

Defect related electrical and optical properties of AlN bulk crystals grown by physical vapor transport

NASA Astrophysics Data System (ADS)

Irmscher, Klaus

AlN crystallizes thermodynamically stable in the wurtzite structure and possesses a direct band gap of about 6 eV. It is the ideal substrate for the epitaxial growth of Al-rich AlxGa1-xN films that enable deep ultraviolet (UV) emitters. Appropriate AlN bulk crystals can be grown by physical vapor transport (PVT). Besides high structural perfection, such substrate crystals should be highly UV transparent and ideally, electrically conductive. It is well known that point defects like impurities and intrinsic defects may introduce electronic energy levels within the bandgap, which lead to additional optical absorption or electrical compensation. Among the impurities, which may be incorporated into the AlN crystals during PVT growth at well above 2000 ° C, oxygen, carbon, and silicon play the major role. Based on our own experimental data as well as on experimental and theoretical results reported in literature, we discuss energy levels, charge states and possible negative-U behavior of these impurities and of vacancy-type defects. In particular, we develop a model that explains the absorption behavior of the crystals in dependence on the Fermi level that can be controlled by the growth conditions, including intentional doping. Further, we pay attention on spectroscopic investigations giving direct evidence for the chemical nature and atomic arrangement of the involved point defects. As examples local vibrational mode (LVM) spectroscopy of carbon related defects and recent reports of electron paramagnetic resonance (EPR) spectroscopy are discussed.

Induction detection of concealed bulk banknotes

NASA Astrophysics Data System (ADS)

Fuller, Christopher; Chen, Antao

2011-10-01

Bulk cash smuggling is a serious issue that has grown in volume in recent years. By building on the magnetic characteristics of paper currency, induction sensing is found to be capable of quickly detecting large masses of banknotes. The results show that this method is effective in detecting bulk cash through concealing materials such as plastics, cardboards, fabrics and aluminum foil. The significant difference in the observed phase between the received signals caused by conducting materials and ferrite compounds, found in banknotes, provides a good indication that this process can overcome the interference by metal objects in a real sensing application. This identification strategy has the potential to not only detect the presence of banknotes, but also the number, while still eliminating false positives caused by metal objects.

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

NASA Astrophysics Data System (ADS)

Jones, Andrew Marquis

The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully

Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

PubMed

Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

2015-07-08

There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

NASA Technical Reports Server (NTRS)

Qiu, Y.; Uhl, D.

2002-01-01

InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

NASA Technical Reports Server (NTRS)

Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

2003-01-01

NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Study of CdTe quantum dots grown using a two-step annealing method

NASA Astrophysics Data System (ADS)

Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2006-02-01

High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.

Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

NASA Technical Reports Server (NTRS)

Ritter, Timothy M.; Larson, D. J.

1998-01-01

The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

NASA Astrophysics Data System (ADS)

Miyamura, Y.; Harada, H.; Nakano, S.; Nishizawa, S.; Kakimoto, K.

2018-05-01

High-performance electronics require long carrier lifetimes within their silicon crystals. This paper reports the effects of thermal donors on the lifetimes of carriers in as-grown n-type silicon crystals grown by the Czochralski method. We grew silicon crystals with two different concentrations of thermal donors using the following two cooling processes: one was cooled with a 4-h halt after detaching the crystal from the melt, and the other was cooled continuously. The crystal grown with the cooling halt contained higher concentrations of thermal donors of the order of 1 × 1013 cm-3, while the crystal without the halt had no thermal donors. The measured bulk lifetimes were in the range of 15-18 ms. We concluded that thermal donors in Czochralski-grown silicon crystals do not act to reduce their lifetimes.

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Liu, L.; Lu, H. H.; Lai, P. T.; Tang, W. M.

2015-03-01

InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm-2 eV-1 at midgap), smaller gate leakage current (9.5 × 10-5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.

Ab initio modeling of vacancies, antisites, and Si dopants in ordered InGaAs

NASA Astrophysics Data System (ADS)

Wang, Jingyang; Lukose, Binit; Thompson, Michael O.; Clancy, Paulette

2017-01-01

In0.53Ga0.47As, a III-V compound semiconductor with high electron mobility, is expected to bring better performance than silicon in next-generation n-type MOSFET devices. However, one major challenge to its wide scale adoption is the difficulty of obtaining high enough dopant activation. For Si-doped InGaAs, the best current experimental result, involving 10 min of furnace annealing at temperatures above 700 °C, yields a free electron concentration of 1.4 ×1019 cm-3, a value that still falls short of requirement for practical applications. In this paper, we investigate the origin of low dopant activation in InGaAs by calculating formation energies for a wide variety of single point defects (Si substutionals, Si tetrahedral interstitials, vacancies, and antisites) in Si-doped In0.5Ga0.5As in a CuAu-I type crystal structure. We find that (1) a high electron concentration can only be achieved under In/Ga-poor growth conditions, while As-poor conditions inhibit n-type doping; and (2) in heavily n-doped samples, cation vacancies VIn/Ga-3 contribute the most to the compensation of excess Si donors via the Si III - VIII mechanism (III = In/Ga), thus becoming the limiting factor to higher dopant activation. Under the most favorable growth conditions for n-doping, we find the maximum carrier concentration to be 5.2 ×1018 cm-3 under thermal equilibrium, within an order of magnitude of the best experimental value.

Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

NASA Astrophysics Data System (ADS)

Wu, C. H.; Zory, P. S.; Emanuel, M. A.

1994-12-01

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

PubMed

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

PubMed

Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

2012-08-13

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications

DTIC Science & Technology

1991-06-01

APLIC ( ATIO NS I:F ( 6 AUTHORiSI VI )N4Wh 7 ERFORMLNG ORGANIZATION NAME(IS) AND ADORE SCISI S Naval Ocean Systems Center San DiegEE, CA 92152-5300(0 9...electronic material for high frequency applications. In0 .5 3Ga. 4 7 As lattice matched to semi-insulating (SI) InP has higher low field mobility , peak...lattice parameter was < ±5 x 10- 4 . The InGaAs mobility at 300 K was 5500 cm 2/V sec. For the device fabrication, the samples were initially cleaned

Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

PubMed

Liu, Wei; Liang, Baolai; Huffaker, Diana; Fetterman, Harold

2013-10-15

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

Characterization of Dislocations in Semiconductor Heterostructures Using X-ray Rocking Curve Pendellösung

NASA Astrophysics Data System (ADS)

Althowibi, Fahad A.; Ayers, John E.

2018-02-01

In this work we investigated the dislocation-dependent behavior of Pendellösung fringes from two types of semiconductor heterostructures: a uniform-composition InGaAs epitaxial layer grown on a GaAs (001) substrate with an intermediate step-graded InGaAs buffer, and an InGaAs/InAlAs high electron mobility transistor grown on an InP (001) substrate. Dynamical x-ray diffraction simulations were carried out in the 004, 115,135, and 117 geometry, assuming Cu kα1 incident radiation, for both structures. The dislocation density strongly affects the intensities and widths of Pendellösung fringes, and we have established quantitative relationships which will allow characterization of the dislocation density.

Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

NASA Astrophysics Data System (ADS)

Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

2013-09-01

The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

Bulk Crystal Growth of Nonlinear Optical Organic Materials Using Inverted Vertical Gradient Freeze Method

NASA Technical Reports Server (NTRS)

Choi, J.; Cruz, Magda; Metzl, R.; Wang, W. S.; Aggarwal, M. D.; Penn, Benjamin G.; Frazier, Donald O.

1998-01-01

A new process for producing large bulk single crystals of benzil (C6H5COCOC6H5) is reported in this paper. Good quality crystals have been successfully grown using this approach to crystal growth. This method seems to be very promising for other thermally stable NLO organic materials also. The entire contents vycor crucible 1.5 inch in diameter and 2 inch deep was converted to single crystal. Purity of the starting growth material is also an important factor in the final quality of the grown crystals. The entire crystal can be very easily taken out of the crucible by simple maneuvering. Initial characterization of the grown crystals indicated that the crystals are as good as other crystals grown by conventional Bridgman Stockbarger technique.

Growth of bulk ZnO crystals by self-selecting CVT method

NASA Astrophysics Data System (ADS)

Fan, Long; Jiang, Tao; Xiao, TingTing; Chen, Jie; Peng, Liping; Wang, Xuemin; Yan, Dawei; Wu, Weidong

2018-05-01

Bulk ZnO crystals were grown by self-selecting CVT method using carbon as the transport agent. The crystal growth process took place on the top of the polycrystalline source material, and deep-red colored ZnO crystals of several millimeters were obtained. The as-grown crystals were characterized by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman scattering (RS) spectroscopy, visible-near infrared (VIS-NIR) spectrophotometer and room temperature photoluminescence (PL) spectroscopy. XRD results indicate good crystallinity of the ZnO crystal. The EDS analysis shows that the crystal has a stoichiometry ratio Zn: O = 52: 48. The results suggest the existence of native defects of oxygen vacancies (OV) in the as-grown ZnO samples, which is caused by the stoichiometry shift to Zn-rich.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method

NASA Astrophysics Data System (ADS)

Hoffman, Tim

Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200microm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched 10B and 11B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. 10B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E2g mode. Crystals with enrichment of 99% 10B and >99% 11B were achieved, with corresponding Raman shift peaks at 1392.0 cm-1 and 1356.6 cm-1, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm-1 achieved, compared to 8.0 cm-1 for natural abundance samples. Defect selective etching was

The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

PubMed Central

2012-01-01

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. PMID:22277096

Optical characteristics of novel bulk and nanoengineered laser host materials

NASA Astrophysics Data System (ADS)

Prasad, Narasimha S.; Sova, Stacey; Kelly, Lisa; Bevan, Talon; Arnold, Bradley; Cooper, Christopher; Choa, Fow-Sen; Singh, N. B.

2018-02-01

The hexagonal apatite single crystals have been investigated for their applications as laser host materials. Czochralksi and flux growth methods have been utilized to obtain single crystals. For low temperature processing (<100 0C), several techniques for crystal growth have been developed. The hexagonal apatite structure (space group P63/m) is characteristic of several compounds, some of which have extremely interesting and useful properties as laser hosts and bone materials. Calcium lanthanum silicate (Nd-doped) and lanthanum aluminate material systems were studied in detail. Nanoengineered calcium and lanthanum based silicates were synthesized by a solution method and their optical and morphological characteristics were compared with Czochralski grown bulk hydroxyapatite single crystals. Materials were evaluated by absorbance, fluorescence and Raman characteristics. Neodymium, iron and chromium doped crystals grown by a solution method showed weak but similar optical properties to that of Czochralski grown single crystals.

Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique

NASA Astrophysics Data System (ADS)

Blumenschein, N.; Slomski, M.; Paskov, P. P.; Kaess, F.; Breckenridge, M. H.; Muth, J. F.; Paskova, T.

2018-02-01

Thermal conductivity of undoped and Sn-doped β-Ga2O3 bulk and single-crystalline thin films have been measured by the 3ω technique. The bulk samples were grown by edge-defined film-field growth (EFG) method, while the thin films were grown on c-plane sapphire by pulsed-laser deposition (PLD). All samples were with (-201) surface orientation. Thermal conductivity of bulk samples was calculated along the in-plane and cross-plane crystallographic directions, yielding a maximum value of 29 W/m-K in the [010] direction at room temperature. A slight thermal conductivity decrease was observed in the Sn-doped bulk samples, which was attributed to enhanced phonon-impurity scattering. The differential 3ω method was used for β-Ga2O3 thin film samples due to the small film thickness. Results show that both undoped and Sndoped films have a much lower thermal conductivity than that of the bulk samples, which is consistent with previous reports in the literature showing a linear relationship between thermal conductivity and film thickness. Similarly to bulk samples, Sn-doped thin films have exhibited a thermal conductivity decrease. However, this decrease was found to be much greater in thin film samples, and increased with Sn doping concentration. A correlation between thermal conductivity and defect/dislocation density was made for the undoped thin films.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

A low-noise 15-μm pixel-pitch 640×512 hybrid InGaAs image sensor for night vision

NASA Astrophysics Data System (ADS)

Guellec, Fabrice; Dubois, Sébastien; de Borniol, Eric; Castelein, Pierre; Martin, Sébastien; Guiguet, Romain; Tchagaspanian, Micha"l.; Rouvié, Anne; Bois, Philippe

2012-03-01

Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71dB in high-gain mode and 108 electrons for 79dB in low-gain mode.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Improved performance of high indium InGaAs photodetectors with InAlAs barrier

NASA Astrophysics Data System (ADS)

Du, Ben; Gu, Yi; Chen, Xing-You; Ma, Ying-Jie; Shi, Yan-Hui; Zhang, Jian; Zhang, Yong-Gang

2018-06-01

We report on the demonstration of an InP-based In0.83Ga0.17As photodetector with an In0.83Al0.17As barrier, which is lattice-matched to the absorption layer. According to the comprehensive comparison with the photodetector without the barrier, the dark current is markedly reduced by inserting the InAlAs barrier. Although the photoresponse slightly decreases for the device with the InAlAs barrier, the detectivity remains higher than that of the reference device at room temperature and significantly increases at lower temperatures. These results indicate that InAlAs is a promising barrier layer in high-indium InGaAs photodetectors.

Bulk crystal growth of Ga2O3

NASA Astrophysics Data System (ADS)

Kuramata, Akito; Koshi, Kimiyoshi; Watanabe, Shinya; Yamaoka, Yu; Masui, Takekazu; Yamakoshi, Shigenobu

2018-02-01

This paper describes the bulk crystal growth of β-Ga2O3 using edge-defined film-fed growth (EFG) process. We first describe the method of the crystal growth and show that large-size crystal with width of up to 6 inch can be grown. Then, we discuss the way to control electrical properties. In the discussion, we give some experimental results of residual impurity measurement, intentional doping using Si and Sn for n-type doping and Fe for insulating doping.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown tomore » be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.« less

Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.

PubMed

Shchurova, L Yu; Kulbachinskii, V A

2011-03-01

We investigate energy levels, thermodynamic, transport and magnetotransport properties of holes in GaAs structure with quantum well InGaAs delta-doped by C and Mn. We present self-consistent calculations for energy levels in the quantum well for different degrees of ionization of Mn impurity. The magnetoresistance of holes in the quantum well is calculated. We explain observed negative magnetoresistance by the reduction of spin-flip scattering on magnetic ions due to aligning of spins with magnetic field.

Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.

Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance ofmore » the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.« less

InGaAs monolithic interconnected modules (MIM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.

1997-12-31

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs withmore » an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.« less

Spectral imaging of chemical compounds using multivariate optically enhanced filters integrated with InGaAs VGA cameras

NASA Astrophysics Data System (ADS)

Priore, Ryan J.; Jacksen, Niels

2016-05-01

Infrared hyperspectral imagers (HSI) have been fielded for the detection of hazardous chemical and biological compounds, tag detection (friend versus foe detection) and other defense critical sensing missions over the last two decades. Low Size/Weight/Power/Cost (SWaPc) methods of identification of chemical compounds spectroscopy has been a long term goal for hand held applications. We describe a new HSI concept for low cost / high performance InGaAs SWIR camera chemical identification for military, security, industrial and commercial end user applications. Multivariate Optical Elements (MOEs) are thin-film devices that encode a broadband, spectroscopic pattern allowing a simple broadband detector to generate a highly sensitive and specific detection for a target analyte. MOEs can be matched 1:1 to a discrete analyte or class prediction. Additionally, MOE filter sets are capable of sensing an orthogonal projection of the original sparse spectroscopic space enabling a small set of MOEs to discriminate a multitude of target analytes. This paper identifies algorithms and broadband optical filter designs that have been demonstrated to identify chemical compounds using high performance InGaAs VGA detectors. It shows how some of the initial models have been reduced to simple spectral designs and tested to produce positive identification of such chemicals. We also are developing pixilated MOE compressed detection sensors for the detection of a multitude of chemical targets in challenging backgrounds/environments for both commercial and defense/security applications. This MOE based, real-time HSI sensor will exhibit superior sensitivity and specificity as compared to currently fielded HSI systems.

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

NASA Astrophysics Data System (ADS)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

NASA Technical Reports Server (NTRS)

Becker, Heidi N.; Johnston, Allan H.

2004-01-01

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

Bulk nucleation and growth of inorganic nanowires and nanotubes

NASA Astrophysics Data System (ADS)

Sharma, Shashank

The nanometer scale materials such as nanowires and nanotubes will be of particular interest as building blocks for designing novel sensors, catalysts, electronic, optical, and optoelectronic devices. However, in order to realize these applications, bulk amounts of nanowires and nanotubes need to be synthesized with precise control over the nanostructure characteristics. In addition, the structure-property relationships for one-dimensional structures are expected to be different than their bulk when their diameters are less than a characteristic Bohr exciton radius. This fundamental curiosity also necessitates bulk synthesis of nanostructures. The current bulk nanowire synthesis methods utilize either nanometer scale porous molds or nanometer scale transition metal clusters to template one-dimensional growth. All these techniques have inherent limitations in terms of control over the nanowire diameter distribution, composition, the growth direction, and the ability to generate abrupt interfaces within individual nanowires. In this dissertation, a new concept for bulk nucleation and growth of one-dimensional nanostructures is proposed and demonstrated for a variety of inorganic material systems. In this technique, multiple nanowires nucleate and grow from pools of low-melting metal melts when exposed to an activated gas phase containing the necessary precursors. This concept, hereby termed Low Melting Metals and Activated Gas phase (LMAG) mediated method, is specifically demonstrated for the synthesis of, (a) silicon nanowires grown using molten gallium and silane precursors; (b) silicon compound nanowires using solution of molten gallium and appropriate gas phase precursors, and (c) metal-oxide nanostructures grown using direct reaction of the respective metal melts and oxygen precursors. Nanowires resulted from the same molten gallium pool at high densities (>1011/cm2) and with narrow diameter distribution. The silicon nanowires synthesized using the LMAG

Growth of high quality bulk size single crystals of inverted solubility lithium sulphate monohydrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silambarasan, A.; Rajesh, P., E-mail: rajeshp@ssn.edu.in; Ramasamy, P.

2015-06-24

The paper summarizes the processes of growing large lithium sulfate monohydrate (LSMH) single crystals. We have established a procedure to grow high quality bulk size single crystals of inverted solubility LSMH by a newly developed unidirectional crystallization technique called the Sankeranarayenan - Ramasamy (SR) method. The convective flow of crystal growth processes from solution and the conditions of growing crystals of various aspects were discussed. Good quality LSMH single crystal is grown of the size 20 mmX80 mm without cracks, localized-defects and inclusions. The as-grown crystals are suitable for piezoelectric and nonlinear optical applications.

High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

NASA Astrophysics Data System (ADS)

Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

2004-08-01

We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cilibrizzi, Pasquale; Askitopoulos, Alexis, E-mail: Alexis.Askitopoulos@soton.ac.uk; Silva, Matteo

2014-11-10

The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates,more » providing a platform for on chip quantum simulations.« less

InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure.

PubMed

Nozaki, Kengo; Matsuo, Shinji; Takeda, Koji; Sato, Tomonari; Kuramochi, Eiichi; Notomi, Masaya

2013-08-12

Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

InGaAs monolithic interconnected modules (MIMs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.

1997-12-31

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. Also, the use of a BSR reduces the requirements imposed on a front surface interference filter and may lead to using only an anti-reflection coating. As a result, MIMs are exposed to themore » entire radiator output, and with increasing output power density. MIMs were fabricated with an active area of 0.9 x 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV modules demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. The near IR reflectance (2--4 {micro}m) for both lattice-matched and lattice-mismatched structures was measured to be in the range of 80--85%. Latest electrical and optical performance results for these MIMs is presented.« less

Low-Light-Level InGaAs focal plane arrays with and without illumination

NASA Astrophysics Data System (ADS)

Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

2010-04-01

Short wavelength IR imaging using InGaAs-based FPAs is shown. Aerius demonstrates low dark current in InGaAs detector arrays with 15 μm pixel pitch. The same material is mated with a 640x 512 CTIA-based readout integrated circuit. The resulting FPA is capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The mean dark current density on the FPAs is extremely low at 0.64 nA/cm2 at 10°C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling (CDS). In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide speckle-free illumination, provide artifact-free imagery versus conventional laser illuminators.

Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

NASA Astrophysics Data System (ADS)

Skromme, B. J.; Palle, K. C.; Poweleit, C. D.; Yamane, H.; Aoki, M.; DiSalvo, F. J.

2002-11-01

Colorless transparent platelet and prismatic GaN crystals up to 3-4 mm, grown from a Na-Ga melt (0.6-0.7 mol fraction of Na) at temperatures of 700-800 °C in a modest (5 MPa) pressure of N2, are characterized using Raman scattering, room and low temperature photoluminescence, and reflectance. They exhibit sharp free and bound exciton luminescence features (down to 0.22 meV full width at half maximum), including multiple excited states. Residual Mg and Zn acceptors and a 33.6 meV donor (possibly ON) are identified. Raman spectra suggest free carrier concentrations down to the low to mid 1016 cm-3 range.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications

NASA Astrophysics Data System (ADS)

Ziegler, Volker; Berg, Michael; Tobler, Hans; Woelk, Claus; Deufel, Reinhard; Trasser, Andreas; Schumacher, Hermann; Alekseev, Egor; Pavlidis, Dimitris; Dickmann, Juergen

1999-02-01

In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V.

Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shafi, M.; Mari, R. H.; Khatab, A.; Henini, M.; Polimeni, A.; Capizzi, M.; Hopkinson, M.

2011-12-01

Dilute nitride GaAs1-xNx layers have been grown by molecular beam epitaxy with nitrogen concentration ranging from 0.2% to 0.8%. These samples have been studied before and after hydrogen irradiation by using standard deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS techniques. The activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs.

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

NASA Astrophysics Data System (ADS)

Roque, J.; Haas, B.; David, S.; Rochat, N.; Bernier, N.; Rouvière, J. L.; Salem, B.; Gergaud, P.; Moeyaert, J.; Martin, M.; Bertin, F.; Baron, T.

2018-05-01

In 0.3 Ga 0.7 As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor deposition using the aspect ratio trapping method are studied. An appropriate method combining cathodoluminescence and high resolution scanning transmission electron microscopy characterization is performed to spatially correlate the optical and structural properties of the QW. A triple period (TP) ordering along the ⟨111⟩ direction induced by the temperature decrease during the growth to favor indium incorporation and aligned along the oxidized patterns is observed in the QW. Local ordering affects the band gap and contributes to the decrease of the optical emission efficiency. Using thermal annealing, we were able to remove the TP ordering and improve the QW optical emission by two orders of magnitude.

Effect of the soil type on the microbiome in the rhizosphere of field-grown lettuce.

PubMed

Schreiter, Susanne; Ding, Guo-Chun; Heuer, Holger; Neumann, Günter; Sandmann, Martin; Grosch, Rita; Kropf, Siegfried; Smalla, Kornelia

2014-01-01

The complex and enormous diversity of microorganisms associated with plant roots is important for plant health and growth and is shaped by numerous factors. This study aimed to unravel the effects of the soil type on bacterial communities in the rhizosphere of field-grown lettuce. We used an experimental plot system with three different soil types that were stored at the same site for 10 years under the same agricultural management to reveal differences directly linked to the soil type and not influenced by other factors such as climate or cropping history. Bulk soil and rhizosphere samples were collected 3 and 7 weeks after planting. The analysis of 16S rRNA gene fragments amplified from total community DNA by denaturing gradient gel electrophoresis and pyrosequencing revealed soil type dependent differences in the bacterial community structure of the bulk soils and the corresponding rhizospheres. The rhizosphere effect differed depending on the soil type and the plant growth developmental stage. Despite the soil type dependent differences in the bacterial community composition several genera such as Sphingomonas, Rhizobium, Pseudomonas, and Variovorax were significantly increased in the rhizosphere of lettuce grown in all three soils. The number of rhizosphere responders was highest 3 weeks after planting. Interestingly, in the soil with the highest numbers of responders the highest shoot dry weights were observed. Heatmap analysis revealed that many dominant operational taxonomic units were shared among rhizosphere samples of lettuce grown in diluvial sand, alluvial loam, and loess loam and that only a subset was increased in relative abundance in the rhizosphere compared to the corresponding bulk soil. The findings of the study provide insights into the effect of soil types on the rhizosphere microbiome of lettuce.

Effect of the soil type on the microbiome in the rhizosphere of field-grown lettuce

PubMed Central

Schreiter, Susanne; Ding, Guo-Chun; Heuer, Holger; Neumann, Günter; Sandmann, Martin; Grosch, Rita; Kropf, Siegfried; Smalla, Kornelia

2014-01-01

The complex and enormous diversity of microorganisms associated with plant roots is important for plant health and growth and is shaped by numerous factors. This study aimed to unravel the effects of the soil type on bacterial communities in the rhizosphere of field-grown lettuce. We used an experimental plot system with three different soil types that were stored at the same site for 10 years under the same agricultural management to reveal differences directly linked to the soil type and not influenced by other factors such as climate or cropping history. Bulk soil and rhizosphere samples were collected 3 and 7 weeks after planting. The analysis of 16S rRNA gene fragments amplified from total community DNA by denaturing gradient gel electrophoresis and pyrosequencing revealed soil type dependent differences in the bacterial community structure of the bulk soils and the corresponding rhizospheres. The rhizosphere effect differed depending on the soil type and the plant growth developmental stage. Despite the soil type dependent differences in the bacterial community composition several genera such as Sphingomonas, Rhizobium, Pseudomonas, and Variovorax were significantly increased in the rhizosphere of lettuce grown in all three soils. The number of rhizosphere responders was highest 3 weeks after planting. Interestingly, in the soil with the highest numbers of responders the highest shoot dry weights were observed. Heatmap analysis revealed that many dominant operational taxonomic units were shared among rhizosphere samples of lettuce grown in diluvial sand, alluvial loam, and loess loam and that only a subset was increased in relative abundance in the rhizosphere compared to the corresponding bulk soil. The findings of the study provide insights into the effect of soil types on the rhizosphere microbiome of lettuce. PMID:24782839

Electronic and magnetic structure of ultra-thin Ni films grown on W(110)

NASA Astrophysics Data System (ADS)

Calloni, A.; Bussetti, G.; Berti, G.; Yivlialin, R.; Camera, A.; Finazzi, M.; Duò, L.; Ciccacci, F.

2016-12-01

We studied the electronic structure of thin Ni films grown on a W(110) single crystal, as a function of the Ni thickness, by means of angle-resolved photoemission and inverse photoemission spectroscopy, also with spin resolution. The results are discussed in the light of the different stages characterizing the transition from the pseudomorphic bcc to the fully relaxed fcc phase. A clear spin polarization is detected as soon as a bulk-like electronic structure is observed. In these conditions, we characterized the exchange splitting of the occupied bands at the Γbar and Mbar points of the surface Brillouin zone, providing further experimental support to previous interpretations of photoemission spectra from bulk Ni.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Exceptional gettering response of epitaxially grown kerfless silicon

DOE PAGES

Powell, D. M.; Markevich, V. P.; Hofstetter, J.; ...

2016-02-08

The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

Shape dependent electronic structure and exciton dynamics in small In(Ga)As quantum dots

NASA Astrophysics Data System (ADS)

Gomis, J.; Martínez-Pastor, J.; Alén, B.; Granados, D.; García, J. M.; Roussignol, P.

2006-12-01

We present a study of the primary optical transitions and recombination dynamics in InGaAs self-assembled quantum nanostructures with different shape. Starting from the same quantum dot seeding layer, and depending on the overgrowth conditions, these new nanostructures can be tailored in shape and are characterized by heights lower than 2 nm and base lengths around 100 nm. The geometrical shape strongly influences the electronic and optical properties of these nanostructuctures. We measure for them ground state optical transitions in the range 1.25 1.35 eV and varying energy splitting between their excited states. The temperature dependence of the exciton recombination dynamics is reported focusing on the intermediate temperature regime (before thermal escape begins to be important). In this range, an important increase of the effective photoluminescence decay time is observed and attributed to the state filling and exciton thermalization between excited and ground states. A rate equation model is also developed reproducing quite well the observed exciton dynamics.

InGaAs multiple quantum well modulating retro-reflector for free-space optical communications

NASA Astrophysics Data System (ADS)

Rabinovich, William S.; Gilbreath, G. Charmaine; Goetz, Peter G.; Mahon, Rita; Katzer, D. Scott; Ikossi-Anastasiou, Kiki; Binari, Steven C.; Meehan, Timothy J.; Stell, Mena F.; Sokolsky, Ilene; Vasquez, John A.; Vilcheck, Michael J.

2002-01-01

Modulating retro-reflectors provide means for free space optical communication without the need for a laser, telescope or pointer tracker on one end of the link. These systems work by coupling a retro-reflector with an electro- optic shutter. The modulating retro-reflector is then interrogated by a cw laser beam from a conventional optical communications system and returns a modulated signal beam to the interrogator. Over the last few years the Naval Research Laboratory has developed modulating retro-reflector based on corner cubes and large area Transmissive InGaAs multiple quantum well modulators. These devices can allow optical links at speeds up to about 10 Mbps. We will discuss the critical performance characteristics of such systems including modulating rate, power consumption, optical contrast ratio and operating wavelength. In addition a new modulating retro-reflector architecture based upon cat s eye retroreflectors will be discussed. This architecture has the possibility for data rates of hundreds of megabits per second at power consumptions below 100 mW.

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

NASA Astrophysics Data System (ADS)

Gogova, D.; Kasic, A.; Larsson, H.; Hemmingsson, C.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Dobos, L.; Pécz, B.; Gibart, P.; Beaumont, B.

2004-07-01

Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy (HVPE) growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-μm-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopy images show the dislocation density of the free-standing HVPE-GaN to be ˜2.5×107 cm-2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8×1015 cm-3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 (3.4712) eV and 3.4721 (3.4718) eV for the Ga- (N-) polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E1(TO) phonon mode position measured at 558.52 cm-1 (Ga face) by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.

Fabrication of optical element from unidirectional grown imidazole-imidazolium picrate monohydrate (IIP) organic crystals for nonlinear optical applications

NASA Astrophysics Data System (ADS)

Vivek, P.; Murugakoothan, P.

2014-12-01

Nonlinear optical bulk single crystal of Imidazole-imidazolium picrate monohydrate (IIP) has been grown by Sankaranarayanan-Ramasamy (SR) method using acetonitrile as solvent. First time we report the bulk growth of IIP crystal by SR method. The transparent IIP single crystal of maximum diameter 21 mm and length 46 mm was obtained by employing SR method. The grown crystal was subjected to high resolution X-ray diffraction, UV-vis-NIR transmittance, refractive index, hardness, dielectric and laser damage threshold studies. The crystalline perfection of the grown crystal was analyzed using HRXRD. Cut off wavelength and optical transmission window of the crystal was assessed by UV-vis-NIR and the refractive index of the crystal was found. The mechanical property of the crystal was estimated by Vicker's hardness test. The dielectric property of the crystal was measured as a function of frequency. The laser damage threshold value was determined. The particle size dependent second harmonic generation efficiency for IIP was evaluated with standard reference material potassium dihydrogen phosphate (KDP) by Kurtz-Perry powder method using Nd:YAG laser, which established the existence of phase matching. The second harmonic generation (SHG) of IIP crystal was investigated by the SHG Maker fringes technique. The mechanism of growth is revealed by carrying out chemical etching using acetonitrile as etchant.

Magnetic anisotropy and transport properties of 70 nm SrRuO3 films grown on different substrates

NASA Astrophysics Data System (ADS)

Wang, X. W.; Zhang, Y. Q.; Meng, H.; Wang, Z. J.; Li, D.; Zhang, Z. D.

2011-04-01

Magnetic and transport properties of 70 nm SrRuO3 films grown on (001) SrTiO3, (001) LaAlO3 and (001) MgO have been investigated. A perpendicular magnetic anisotropy is observed in compressive strained films grown on SrTiO3. A weaker perpendicular magnetic anisotropy and a weak in-plane magnetic anisotropy are found in strain-free films grown on MgO and LAO, respectively, possibly due to different growth mechanisms. In addition, metallic behavior is observed in all the as-grown films and the resistivity of the film grown on MgO is lowest (230 μΩ cm at 300 K), which is close to that of bulk single crystal SrRuO3 (about 195 μΩ cm). The relation between structure and properties indicates that the magnetic anisotropy, as well as the magnitude of resistivity of SrRuO3 films, can be effectively tailored by taking advantage of different strains and growth mechanisms induced by growth on different substrates.

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Hassayoun, Latifa Slimen; Maaref, Hassen; Panczer, Gerard; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle

2017-12-01

Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 °C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature >600 °C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III-V/Si solar cells.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of

Catastrophic optical bulk degradation in high-power single- and multi-mode InGaAs-AlGaAs strained QW lasers: part II

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Ayvazian, Talin; Brodie, Miles; Lingley, Zachary

2018-03-01

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to catastrophic optical damage (COD), it is especially crucial for space satellite applications to investigate reliability, failure modes, precursor signatures of failure, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we continued our physics of failure investigation by performing long-term life-tests followed by failure mode analysis (FMA) using nondestructive and destructive micro-analytical techniques. We performed long-term accelerated life-tests on state-of-the-art SM and MM InGaAs- AlGaAs strained QW lasers under ACC mode. Our life-tests have accumulated over 25,000 test hours for SM lasers and over 35,000 test hours for MM lasers. We first employed electron beam induced current (EBIC) technique to identify failure modes of degraded SM lasers by observing dark line defects. All the SM failures that we studied showed catastrophic and sudden degradation and all of these failures were bulk failures. Since degradation mechanisms responsible for COBD are still not well understood, we also employed other techniques including focused ion beam (FIB) and high-resolution TEM to further study dark line defects and dislocations in post-aged lasers. Keywor

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

NASA Technical Reports Server (NTRS)

Ho, C. T.; Mathias, J. D.

1981-01-01

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Enhanced spin-ordering temperature in ultrathin FeTe films grown on a topological insulator

NASA Astrophysics Data System (ADS)

Singh, Udai Raj; Warmuth, Jonas; Kamlapure, Anand; Cornils, Lasse; Bremholm, Martin; Hofmann, Philip; Wiebe, Jens; Wiesendanger, Roland

2018-04-01

We studied the temperature dependence of the diagonal double-stripe spin order in 1 and 2 unit cell thick layers of FeTe grown on the topological insulator B i2T e3 via spin-polarized scanning tunneling microscopy. The spin order persists up to temperatures which are higher than the transition temperature reported for bulk F e1 +yTe with lowest possible excess Fe content y . The enhanced spin order stability is assigned to a strongly decreased y with respect to the lowest values achievable in bulk crystal growth, and effects due to the interface between the FeTe and the topological insulator. The result is relevant for understanding the recent observation of a coexistence of superconducting correlations and spin order in this system.

Strain transfer across grain boundaries in MoS2 monolayers grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Niehues, Iris; Blob, Anna; Stiehm, Torsten; Schmidt, Robert; Jadriško, Valentino; Radatović, Borna; Čapeta, Davor; Kralj, Marko; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

2018-07-01

Monolayers of transition metal dichalcogenides (TMDC) mechanically exfoliated from bulk crystals have exceptional mechanical and optical properties. They are extremely flexible, sustaining mechanical strain of about 10% without breaking. Their optical properties dramatically change with applied strain. However, the fabrication of a large number of mechanical devices is tedious due to the micromechanical exfoliation process. Alternatively, monolayers can be grown by chemical vapor deposition (CVD) on the wafer scale, with the drawback of cracks and grain boundaries in the material. Therefore, it is important to investigate the mechanical properties of CVD-grown material and its potential as a material for mass production of nanomechanical devices. Here, we measure the optical absorption of CVD-grown MoS2 monolayers with applied uniaxial tensile strain. We derive a strain-dependent shift for the A exciton of  ‑42 meV/%. This value is identical to MoS2 monolayers, which are mechanically exfoliated from natural molybdenite crystals. Using angle-resolved second-harmonic generation spectroscopy, we find that the applied uniaxial tensile strain is fully transferred across grain boundaries of the CVD-grown monolayer. Our work demonstrates that large-area artificially grown MoS2 monolayers are promising for mass-produced nanomechanical devices.

Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction

NASA Astrophysics Data System (ADS)

Sasaki, Takuo; Takahasi, Masamitu

2017-06-01

In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A high In/Ga supply ratio results in strong size inhomogeneity of Au particles and interrupts the nanowire growth at a certain point of time. Based on the experimental results, we discussed the state of Au catalysts with high indium content during the nanowire growth. We found that a growth temperature below the eutectic temperature is essential to avoid the growth interruption and maintain the nanowire growth. The high In/Ga ratio necessitates accurate size control of Au particles before growth for further improvement of the nanowire growth.

High kappa Dielectrics on InGaAs and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2011-04-20

ALD-Al2O3 and in-situ MBE-Al2O3/ Ga2O3 (Gd2O3) [GGO] as the gate dielectrics. The advances of the InGaAs MOSFETs achieved will enable future CMOS...and GaN MOSFETs:  High-performance self-aligned inversion-channel In0.53Ga0.47As and In0.75Ga0.25As MOSFET’s with Al2O3/ Ga2O3 (Gd2O3) as gate... Ga2O3 (Gd2O3) as gate dielectrics Key accomplishments in devices of 1m gate length: High drain current of 1.23 mA/m High transcoductance of 714

Synthesis of carbon nanofibers by catalytic CVD of chlorobenzene over bulk nickel alloy

NASA Astrophysics Data System (ADS)

Kenzhin, Roman M.; Bauman, Yuri I.; Volodin, Alexander M.; Mishakov, Ilya V.; Vedyagin, Aleksey A.

2018-01-01

Catalytic chemical vapor deposition (CCVD) of chlorobenzene over bulk nickel alloy (nichrome) was studied. The bulk Ni-containing samples being exposed to a contact with aggressive reaction medium undergo self-disintegration followed by growth of carbon nanofibers. This process, also known as a metal dusting, requires the simultaneous presence of chlorine and hydrogen sources in the reaction mixture. Molecule of chlorobenzene complies with these requirements. The experiments on CCVD were performed in a flow-through reactor system. The initial stages of nickel disintegration process were investigated in a closed system under Autogenic Pressure at Elevated Temperature (RAPET) conditions. Scanning and transmission electron microscopies and ferromagnetic resonance spectroscopy were applied to examine the samples after their interaction with chlorobenzene. Introduction of additional hydrogen into the flow-through system was shown to affect the morphology of grown carbon nanofibers.

Optical properties of bulk gallium nitride single crystals grown by chloride-hydride vapor-phase epitaxy

NASA Astrophysics Data System (ADS)

Agyekyan, V. F.; Borisov, E. V.; Serov, A. Yu.; Filosofov, N. G.

2017-12-01

A gallium nitride crystal 5 mm in thickness was grown by chloride-hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

Bulk unipolar diodes formed in GaAs by ion implantation

NASA Astrophysics Data System (ADS)

Hutchinson, S.; Kelly, M. J.; Gwilliam, R.; Sealy, B. J.; Carr, M.

1999-01-01

In an attempt to emulate epitaxially manufactured semiconductor multilayers for microwave device applications, we have produced a camel diode structure in GaAs for the first time, using the tail of a Mg + implant into a molecular beam epitaxially grown n +-n --n + structure. Using a range of ion energies and doses, samples are observed to exhibit bulk unipolar diode characteristics. With low dose and energy, a diode with barrier height of ˜0.8 V and ideality factor ˜1.25 is achieved. 'Punch through' diode characteristics are obtained at high ion dose and energy, some with knee voltages in excess of 7 V.

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.; Chen, Yuanping; Brill, Gregory; Dhar, Nibir K.; Carmody, Michael; Bailey, Robert; Arias, Jose

2006-05-01

At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSe xTe 1-x/Si(211) is being investigated as an alternative substrate to bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect density less than 400 cm -2 and full width at half maximum of X-ray double crystal rocking curve as low as 100 arc-sec with excellent uniformity over 3 inch area. LW-HgCdTe layers on these compliant substrates exhibit comparable electrical properties to those grown on bulk CZT substrates. Photovoltaic devices fabricated on these LWIR material shows diffusion limited performance at 78K indicating high quality material. Measured R °A at 78K on λ co = 10 μm material is on the order of 340 Ω-cm II. In addition to single devices, we have fabricated 256x256 2-D arrays with 40 μm pixel pitch on LW-HgCdTe grown on Si compliant substrates. Data shows excellent QE operability of 99% at 78K under a tactical background flux of 6.7x10 15 ph/cm2sec. Most probable dark current at the peak distribution is 5.5 x 10 9 e-/sec and is very much consistent with the measured R °A values from single devices. Initial results indicate NETD of 33 mK for a cut-off wavelength of 10 μm with 40 micron pixels size. This work demonstrates CdSe xTe 1-x/Si(211) substrates provides a potential road map to more affordable, robust 3 rd generation FPAs.

17 CFR 5.23 - Notice of bulk transfers and bulk liquidations.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 17 Commodity and Securities Exchanges 1 2011-04-01 2011-04-01 false Notice of bulk transfers and bulk liquidations. 5.23 Section 5.23 Commodity and Securities Exchanges COMMODITY FUTURES TRADING COMMISSION OFF-EXCHANGE FOREIGN CURRENCY TRANSACTIONS § 5.23 Notice of bulk transfers and bulk liquidations...

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Turski, Henryk; Muzioł, Grzegorz; Siekacz, Marcin; Wolny, Pawel; Szkudlarek, Krzesimir; Feduniewicz-Żmuda, Anna; Dybko, Krzysztof; Skierbiszewski, Czeslaw

2018-01-01

Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.

Effect of solvents on the bulk growth of 4-aminobenzophenone single crystals: A potential material for blue and green lasers

NASA Astrophysics Data System (ADS)

Natarajan, V.; Usharani, S.; Arivanandhan, M.; Anandan, P.; Hayakawa, Y.

2015-06-01

Although 4-aminobenzophenone (4-ABP) is the best derivative of benzophenone with 260 times higher second harmonic generation (SHG) efficiency than potassium dihydrogen phosphate (KDP), growth of high quality bulk crystal still remains a difficult task. In the present work, the effect of solvents on solubility and growth aspects of 4-ABP was investigated to grow inclusion free 4-ABP crystals. The growth processes were discussed based on solute-solvent interaction in two different growth media of ethyl acetate and ethanol. The growth rate and thereby solvent inclusions are relatively higher in ethyl acetate grown crystal than the crystal grown from ethanol. The structural, thermal and optical properties of 4-ABP crystals were studied. The enthalpy of 4-ABP melting process was estimated from differential thermal analysis. The optical transmission study shows that 4-ABP crystals grown from ethanol has high transparency compared to ethyl acetate grown sample due to solvent inclusion in the later crystal.

High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish

2012-06-01

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

Bulk Growth of 2-6 Crystals in the Microgravity Environment of USML-1

NASA Technical Reports Server (NTRS)

Gillies, Donald C.; Lehoczky, Sandor L.; Szofran, Frank R.; Larson, David J.; Su, Ching-Hua; Sha, Yi-Gao; Alexander, Helga A.

1993-01-01

The first United States Microgravity Laboratory Mission (USML- 1) flew in June 1992 on the Space Shuttle Columbia. An important part of this SpaceLab mission was the debut of the Crystal Growth Furnace (CGF). Of the seven samples grown in the furnace, three were bulk grown 2-6 compounds, two of a cadmium zinc telluride alloy, and one of a mercury zinc telluride alloy. Ground based results are presented, together with the results of computer simulated growths of these experimental conditions. Preliminary characterization results for the three USML-1 growth runs are also presented and the flight sample characteristics are compared to the equivalent ground truth samples. Of particular interest are the effect of the containment vessel on surface features, and especially on the nucleation, and the effect of the gravity vector on radial and axial compositional variations and stress and defect levels.

Synthesis and Secretion of Isoflavones by Field-Grown Soybean.

PubMed

Sugiyama, Akifumi; Yamazaki, Yumi; Hamamoto, Shoichiro; Takase, Hisabumi; Yazaki, Kazufumi

2017-09-01

Isoflavones play important roles in rhizosphere plant-microbe interactions. Daidzein and genistein secreted by soybean roots induce the symbiotic interaction with rhizobia and may modulate rhizosphere interactions with microbes. Yet despite their important roles, little is known about the biosynthesis, secretion and fate of isoflavones in field-grown soybeans. Here, we analyzed isoflavone contents and the expression of isoflavone biosynthesis genes in field-grown soybeans. In roots, isoflavone contents and composition did not change with crop growth, but the expression of UGT4, an isoflavone-specific 7-O-glucosyltransferase, and of ICHG (isoflavone conjugates hydrolyzing beta-glucosidase) was decreased during the reproductive stages. Isoflavone contents were higher in rhizosphere soil than in bulk soil during both vegetative and reproductive stages, and were comparable in the rhizosphere soil between these two stages. We analyzed the degradation dynamics of daidzein and its glucosides to develop a model for predicting rhizosphere isoflavone contents from the amount of isoflavones secreted in hydroponic culture. Conjugates of daidzein were degraded much faster than daidzein, with degradation rate constants of 8.51 d-1 for malonyldaidzin and 11.6 d-1 for daidzin, vs. 9.15 × 10-2 d-1 for daidzein. The model suggested that secretion of isoflavones into the rhizosphere is higher during vegetative stages than during reproductive stages in field-grown soybean. © The Author 2017. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

NASA Technical Reports Server (NTRS)

Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

2002-01-01

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Curvature and bow of bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foronda, Humberto M.; Young, Erin C.; Robertson, Christian A.

2016-07-21

We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substratesmore » as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE PAGES

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse; ...

2017-01-06

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

New materials and techniques for improved mm wave devices

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.

1991-01-01

Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

PubMed Central

Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

2014-01-01

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

Preparation of Transparent Bulk TiO2/PMMA Hybrids with Improved Refractive Indices via an in Situ Polymerization Process Using TiO2 Nanoparticles Bearing PMMA Chains Grown by Surface-Initiated Atom Transfer Radical Polymerization.

PubMed

Maeda, Satoshi; Fujita, Masato; Idota, Naokazu; Matsukawa, Kimihiro; Sugahara, Yoshiyuki

2016-12-21

Transparent TiO 2 /PMMA hybrids with a thickness of 5 mm and improved refractive indices were prepared by in situ polymerization of methyl methacrylate (MMA) in the presence of TiO 2 nanoparticles bearing poly(methyl methacrylate) (PMMA) chains grown using surface-initiated atom transfer radical polymerization (SI-ATRP), and the effect of the chain length of modified PMMA on the dispersibility of modified TiO 2 nanoparticles in the bulk hybrids was investigated. The surfaces of TiO 2 nanoparticles were modified with both m-(chloromethyl)phenylmethanoyloxymethylphosphonic acid bearing a terminal ATRP initiator and isodecyl phosphate with a high affinity for common organic solvents, leading to sufficient dispersibility of the surface-modified particles in toluene. Subsequently, SI-ATRP of MMA was achieved from the modified surfaces of the TiO 2 nanoparticles without aggregation of the nanoparticles in toluene. The molecular weights of the PMMA chains cleaved from the modified TiO 2 nanoparticles increased with increases in the prolonging of the polymerization period, and these exhibited a narrow distribution, indicating chain growth controlled by SI-ATRP. The nanoparticles bearing PMMA chains were well-dispersed in MMA regardless of the polymerization period. Bulk PMMA hybrids containing modified TiO 2 nanoparticles with a thickness of 5 mm were prepared by in situ polymerization of the MMA dispersion. The transparency of the hybrids depended significantly on the chain length of the modified PMMA on the nanoparticles, because the modified PMMA of low molecular weight induced aggregation of the TiO 2 nanoparticles during the in situ polymerization process. The refractive indices of the bulk hybrids could be controlled by adjusting the TiO 2 content and could be increased up to 1.566 for 6.3 vol % TiO 2 content (1.492 for pristine PMMA).

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bellotti, Enrico; Wen, Hanqing; Dominici, Stefano; Glasmann, Andreu L.

2017-02-01

HgCdTe has been the material of choice for MWIR, and LWIR infrared sensing due to its highly tunable band gap and favorable material properties. However, HgCdTe growth and processing for the ESWIR spectral region is less developed, so alternative materials are actively researched. It is important to compare the fundamental limitations of each material to determine which offers optimal device performance. In this article, we investigate the intrinsic recombination mechanisms of ESWIR materials—InGaAs, GeSn, and HgCdTe—with cutoff wavelength near 2.5μm, and MWIR with cutoff of 5μm. First, using an empirical pseudo-potential model, we calculate the full band structure of each alloy using the virtual crystal approximation, modified to include disorder effects and spin-orbit coupling. We then evaluate the Auger and radiative recombination rates using a Green's function based model, applied to the full material band structure, yielding intrinsic carrier lifetimes for each given temperature, carrier injection, doping density, and cutoff wavelength. For example, we show that ESWIR HgCdTe has longer carrier lifetimes than InGaAs when strained or relaxed near room temperature, which is advantageous for high operating temperature photodetectors. We perform similar analyses for varying composition GeSn by comparing the calculated lifetimes with InGaAs and HgCdTe. Finally, we compare HgCdTe, InAsSb and GeSn with a cutoff in the MWIR spectral band.

Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method

NASA Astrophysics Data System (ADS)

He, Nuotian; Tang, Huili; Liu, Bo; Zhu, Zhichao; Li, Qiu; Guo, Chao; Gu, Mu; Xu, Jun; Liu, Jinliang; Xu, Mengxuan; Chen, Liang; Ouyang, Xiaoping

2018-04-01

In this investigation, β-Ga2O3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, β-Ga2O3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production.

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

2016-08-01

Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.

Heterostructures with CdTe and CdTe 1-xSex (x ~ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ~ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects havemore » a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 um, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 us with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 us.« less

Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation

NASA Astrophysics Data System (ADS)

Li, Guangji; Zhang, Hongchao; Zhou, Guanglong; Lu, Jian; Zhou, Dayong

2017-06-01

InGaAs solar cells were irradiated by 1060-1080nm continuous wave (CW) laser, and studied the laser-electrical conversion and damage experiment with the power density as 97mW/cm2 and 507W/cm2 respectively. The result indicated that there is no obvious damage phenomenon but air layer appeared in the damaged region, and there is no direct relationship between the area and the extent of damage. Moreover, the p-n junction in the damage zone was destroyed, lost the ability of photoelectric conversion. The region acts as a resistance between the two electrodes, resulting in an increase in the leakage current of the solar cells and a decrease in the parallel resistance, which is the main reason leading to the decline of open circuit voltage, short circuit current and conversion efficiency. This paper would provide a reference for wireless energy transmission and the subsequent laser damage of solar cells.

Synthetic mimicking of plant oils and comparison with naturally grown products in polyurethane synthesis.

PubMed

Coles, Stuart R; Barker, Guy; Clark, Andrew J; Kirwan, Kerry; Jacobs, Daniel; Makenji, Kylash; Pink, David

2008-06-11

The use of plant oils as industrial feedstocks can often be hampered by their lack of optimization towards a particular process, as well as their development being risky; growing suitable volumes of crops to test can take up to five years. To circumvent this, we aimed to discover a method that would mimic plant oil profiles in the laboratory, and show that they exhibited similar properties to the naturally grown plant oils in a given process. Using the synthesis of polyurethanes as an example, we have synthesized six different polymers and demonstrated that plant oils will produce polymers with similar physical properties to those oils mimicked in the laboratory. The use of this mimicking process can be extended to other types of polymers to obtain a method for predicting the properties of a given material based on the plant oil composition of a crop before it is grown in bulk.

Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

NASA Astrophysics Data System (ADS)

Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

NASA Astrophysics Data System (ADS)

Bryan, Zachary A.

defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

NASA Technical Reports Server (NTRS)

Woodworth, Andrew, A; Sayir, Ali; Neudeck, Philip, G; Raghothamachar, Balaji; Dudley, Michael

2012-01-01

Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

Determination of indium content of GaAs/(In,Ga)As/(GaAs) core-shell(-shell) nanowires by x-ray diffraction and nano x-ray fluorescence

NASA Astrophysics Data System (ADS)

Al Hassan, Ali; Lewis, R. B.; Küpers, H.; Lin, W.-H.; Bahrami, D.; Krause, T.; Salomon, D.; Tahraoui, A.; Hanke, M.; Geelhaar, L.; Pietsch, U.

2018-01-01

We present two complementary approaches to investigate the In content in GaAs/(In,Ga)As/(GaAs) core-shell-(shell) nanowire (NW) heterostructures using synchrotron radiation. The key advantage of our methodology is that NWs are characterized in their as-grown configuration, i.e., perpendicularly standing on a substrate. First, we determine the mean In content of the (In,Ga)As shell by high-resolution x-ray diffraction (XRD) from NW ensembles. In particular, we disentangle the influence of In content and shell thickness on XRD by measuring and analyzing two reflections with diffraction vector parallel and perpendicular to the growth axis, respectively. Second, we study the In distribution within individual NWs by nano x-ray fluorescence. Both the NW (111) basal plane, that is parallel to the surface of the substrate, and the {10-1} sidewall plane were scanned with an incident nanobeam of 50 nm width. We investigate three samples with different nominal In content of the (In,Ga)As shell. In all samples, the average In content of the shell determined by XRD is in good agreement with the nominal value. For a nominal In content of 15%, the In distribution is fairly uniform between all six sidewall facets. In contrast, in NWs with nominally 25% In content, different sidewall facets of the same NW exhibit different In contents. This effect is attributed to shadowing during growth by molecular beam epitaxy. At the same time, along the NW axis the In distribution is still fairly homogeneous. In NWs with 60% nominal In content and no outer GaAs shell, the In content varies significantly both between different sidewall facets and along the NW axis. This fluctuation is explained by the formation of (In,Ga)As mounds that grow simultaneously with a thinner (In,Ga)As shell. The methodology presented here may be applied also to other core-shell NWs with a ternary shell and paves the way to correlating NW structure with functional properties that depend on the as-grown configuration

The design of high precision temperature control system for InGaAs short-wave infrared detector

NASA Astrophysics Data System (ADS)

Wang, Zheng-yun; Hu, Yadong; Ni, Chen; Huang, Lin; Zhang, Aiwen; Sun, Xiao-bing; Hong, Jin

2018-02-01

The InGaAs Short-wave infrared detector is a temperature-sensitive device. Accurate temperature control can effectively reduce the background signal and improve detection accuracy, detection sensitivity, and the SNR of the detection system. Firstly, the relationship between temperature and detection background, NEP is analyzed, the principle of TEC and formula between cooling power, cooling current and hot-cold interface temperature difference are introduced. Then, the high precision constant current drive circuit based on triode voltage control current, and an incremental algorithm model based on deviation tracking compensation and PID control are proposed, which effectively suppresses the temperature overshoot, overcomes the temperature inertia, and has strong robustness. Finally, the detector and temperature control system are tested. Results show that: the lower of detector temperature, the smaller the temperature fluctuation, the higher the detection accuracy and the detection sensitivity. The temperature control system achieves the high temperature control with the temperature control rate is 7 8°C/min and the temperature fluctuation is better than +/-0. 04°C.

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study

NASA Astrophysics Data System (ADS)

Khomyakov, Petr A.; Luisier, Mathieu; Schenk, Andreas

2015-08-01

Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The electronic structure of these compounds has been calculated within the framework of local density approximation and hybrid functional approach for large cubic supercells and special quasi-random structures, which represent two kinds of model structures for random alloys. We find that the predicted bowing effect for the band energy deformation potentials is rather insensitive to the choice of the functional and alloy structural model. The direction of bowing is determined by In cations that give a stronger contribution to the formation of the InxGa1-xAs valence band states with x ≳ 0.5, compared to Ga cations.

Photo-conductive detection of continuous THz waves via manipulated ultrafast process in nanostructures

NASA Astrophysics Data System (ADS)

Moon, Kiwon; Lee, Eui Su; Lee, Il-Min; Park, Dong Woo; Park, Kyung Hyun

2018-01-01

Time-domain and frequency-domain terahertz (THz) spectroscopy systems often use materials fabricated with exotic and expensive methods that intentionally introduce defects to meet short carrier lifetime requirements. In this study, we demonstrate the development of a nano-photomixer that meets response speed requirements without using defect-incorporated, low-temperature-grown (LTG) semiconductors. Instead, we utilized a thin InGaAs layer grown on a semi-insulating InP substrate by metal-organic chemical vapor deposition (MOCVD) combined with nano-electrodes to manipulate local ultrafast photo-carrier dynamics via a carefully designed field-enhancement and plasmon effect. The developed nano-structured photomixer can detect continuous-wave THz radiation up to a frequency of 2 THz with a peak carrier collection efficiency of 5%, which is approximately 10 times better than the reference efficiency of 0.4%. The better efficiency results from the high carrier mobility of the MOCVD-grown InGaAs thin layer with the coincidence of near-field and plasmon-field distributions in the nano-structure. Our result not only provides a generally applicable methodology for manipulating ultrafast carrier dynamics by means of nano-photonic techniques to break the trade-off relation between the carrier lifetime and mobility in typical LTG semiconductors but also contributes to mass-producible photo-conductive THz detectors to facilitate the widespread application of THz technology.

Surface and bulk effects of K in Cu 1-xK xIn 1-yGa ySe 2 solar cells

DOE PAGES

Muzzillo, Christopher P.; Anderson, Timothy J.

2017-12-29

Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu 1-xK xIn 1-yGa ySe 2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn 1-yGa ySe 2 absorbers with KIn 1-yGa ySe 2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn 1-yGa ySe 2 and bulk x ~ 0.07 Cu 1-xK xIn 1-yGa ySe 2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improvedmore » efficiency, VOC, and FF, relative to CuIn 1-yGa ySe 2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu 1-xK xInSe 2, the formation of Cu 1-xK xGaSe 2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe 2 + KGaSe 2. KIn 1-yGa ySe 2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn 1-yGa ySe 2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn 1-yGa ySe 2 passivates the surface of CuIn 1-yGa ySe 2 to increase efficiency, VOC, and FF, while bulk Cu 1-xK xIn 1-yGa ySe 2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.« less

Surface and bulk effects of K in Cu 1-xK xIn 1-yGa ySe 2 solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Anderson, Timothy J.

Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu 1-xK xIn 1-yGa ySe 2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn 1-yGa ySe 2 absorbers with KIn 1-yGa ySe 2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn 1-yGa ySe 2 and bulk x ~ 0.07 Cu 1-xK xIn 1-yGa ySe 2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improvedmore » efficiency, VOC, and FF, relative to CuIn 1-yGa ySe 2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu 1-xK xInSe 2, the formation of Cu 1-xK xGaSe 2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe 2 + KGaSe 2. KIn 1-yGa ySe 2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn 1-yGa ySe 2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn 1-yGa ySe 2 passivates the surface of CuIn 1-yGa ySe 2 to increase efficiency, VOC, and FF, while bulk Cu 1-xK xIn 1-yGa ySe 2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.« less

Gd Ba Cu O bulk superconductors fabricated by a seeded infiltration growth technique under reduced oxygen partial pressure

NASA Astrophysics Data System (ADS)

Iida, K.; Babu, N. H.; Shi, Y. H.; Cardwell, D. A.; Murakami, M.

2006-06-01

Single-grain Gd-Ba-Cu-O (GdBCO) bulk superconductors have been grown by a seeded infiltration and growth (SIG) technique under a 1% O2+N2 atmosphere using a generic MgO-doped Nd-Ba-Cu-O (MgO-NdBCO) seed placed on the sample surface at room temperature (the so-called the cold-seeding method). Partial melting of the MgO-NdBCO seeds fabricated in air under notionally identical thermal processing conditions, however, limited the reliability of this bulk GdBCO single-grain process. The observed seed decomposition is attributed to the dependence of the peritectic temperature Tp of MgO-doped Nd1+xBa2-xCu3Oy solid solution (MgO-doped Nd-123ss, where ss indicates solid solution) compounds on both oxygen partial pressure during the melt process and the level of solid solution (x). The peritectic decomposition temperature of MgO-doped Nd-123ss, with x ranging from 0 to 0.5 under p(O2) = 1.00 atm, was observed to remain constant at 1120 °C. Tp was observed to decrease linearly as a function of solid solution level, on the other hand, under oxygen partial pressures of both p(O2) = 0.21 and 0.01 atm. Based on these results, MgO-doped NdBCO seed crystals should be grown under reduced oxygen partial pressure in order to obtain a stable MgO-doped NdBCO seed crystal suitable for cold-seeding processes of large-grain (RE)BCO bulk superconductors (where RE is a rare earth element).

Structural and optical characterization of ZnO nanowires grown on alumina by thermal evaporation method.

PubMed

Mute, A; Peres, M; Peiris, T C; Lourenço, A C; Jensen, Lars R; Monteiro, T

2010-04-01

Zinc oxide nanowires have been grown on alumina substrate by thermal evaporation of zinc nanopowder in the presence of oxygen flow. The growth was performed under ambient pressure and without the use of foreign catalyst. Scanning electron microscopy (SEM) observation showed that the as-grown sample consists of bulk ZnO crystal on the substrate surface with nanowires growing from this base. Growth mechanism of the observed morphology is suggested to be governed by the change of zinc vapour supersaturation during the growth process. X-ray diffraction (XRD) measurement was used to identify the crystalline phase of the nanowires. Optical properties of the nanowires were investigated using Raman scattering and photoluminescence (PL). The appearance of dominant, Raman active E2 (high) phonon mode in the Raman spectrum has confirmed the wurtzite hexagonal phase of the nanowires. With above bandgap excitation the low temperature PL recombination is dominated by donor bound exciton luminescence at -3.37 eV with a narrow full width at half maximum. Free exciton emission is also seen at low temperature and can be observed up to room temperature. The optical data indicates that the grown nanowires have high optical quality.

Rotary bulk solids divider

DOEpatents

Maronde, Carl P.; Killmeyer, Jr., Richard P.

1992-01-01

An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

ROTARY BULK SOLIDS DIVIDER

DOEpatents

Maronde, Carl P.; Killmeyer JR., Richard P.

1992-03-03

An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Desrat, W.; Moret, M.; Briot, O.; Ngo, T.-H.; Piot, B. A.; Jabakhanji, B.; Gil, B.

2018-04-01

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaunbrecher, Katherine N.; National Renewable Energy Laboratory, Golden, Colorado 80401; Kuciauskas, Darius

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have amore » zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.« less

High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2010-02-19

UHV- deposited Al2O3(3nm)/ Ga2O3 (Gd2O3)(8.5nm) on n- and p-In0.2Ga0.8As/GaAs. The results exhibit very high-quality interface and free-moving Fermi...κ Ga2O3 (Gd2O3) [GGO] and Gd2O3 on InGaAs, without an interfacial layer. InxGa1−xAs MOSFETs have been successfully demonstrated with excellent device... Ga2O3 (Gd2O3)/In0.2Ga0.8As and high temperature (850°C) stability Scaling high κ oxides to nanometer range as well as unpinning surface Fermi level

Continuum modelling of silicon diffusion in indium gallium arsenide

NASA Astrophysics Data System (ADS)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

75 FR 34682 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-18

...] RIN 1625-AB47 Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk... on June 17, 2010, entitled ``Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes (IMSBC) Code.'' This correction provides correct information with regard to the...

Development of a Miniature Snapshot Multispectral Imager

DTIC Science & Technology

2010-09-01

ZnS ) and SiO2, however since ITC had no prior experience with ZnS , the next best choice of TiO2 and SiO2 was selected for fabrication of dielectric...Bass, S. J.; Apsley, N. High Quality InP /InGaAs Fabry-Perrot Etalons Grown by AP MOCVD. Semicon. Sci. Technol. 1987, 2, 466–467. 13. Szipocs, R

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Asoka-Kumar, P.; Gossmann, H.-J.; Unterwald, F. C.; Feldman, L. C.; Leung, T. C.; Au, H. L.; Talyanski, V.; Nielsen, B.; Lynn, K. G.

1993-08-01

Positron annihilation in Si is a quantitaive, depth-sensitive technique for the detection of vacancylike defects or voids. A sensitivity of 5×1015 cm-3 for voidlike defects is easily achieved. The technique has been applied to a study of point-defect distributions in thin films of Si grown by molecular-beam epitaxy. A special procedure was developed to remove the influence of the native oxide on the positron measurement. 200-nm-thick films grown at temperatures between 475 and 560 °C show no defects below the sensitivity limit and are indistinguishable from the bulk substrate. So are films grown at 220 °C, provided a 2-min high-temperature anneal to a peak temperature of >=500 °C is executed every ~=30 nm during growth. If TRTA=450 °C, part of the film contains vacancylike defects to a concentration of ~=1018 cm-3. These results correlate well with current-voltage characteristics of p-n junctions grown with different rapid thermal anneal (RTA) temperatures. Ion scattering, with a defect sensitivity of ~=1%, shows no difference between films grown with different TRTA. Recrystallization of amorphous films, deposited at room temperature and annealed in situ at 550 °C, always leaves a significant defect concentration of ~=2×1018 cm-3; those defects are reduced but still present even after a 2-h 800 °C furnace anneal.

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature.

PubMed

Feng, Jiagui; Wagner, Sean R; Zhang, Pengpeng

2015-06-18

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the (√3 x √3) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown (√3 x √3) phase is identical to that of the (√3 x √3)R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.

7 CFR 201.40 - Bulk.

Code of Federal Regulations, 2011 CFR

2011-01-01

... Sampling in the Administration of the Act § 201.40 Bulk. Bulk seeds or screenings shall be sampled by inserting a long probe or thrusting the hand into the bulk as circumstances require in at least seven... 7 Agriculture 3 2011-01-01 2011-01-01 false Bulk. 201.40 Section 201.40 Agriculture Regulations of...

7 CFR 201.40 - Bulk.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Sampling in the Administration of the Act § 201.40 Bulk. Bulk seeds or screenings shall be sampled by inserting a long probe or thrusting the hand into the bulk as circumstances require in at least seven... 7 Agriculture 3 2010-01-01 2010-01-01 false Bulk. 201.40 Section 201.40 Agriculture Regulations of...

Microtube-Czochralski technique (μT-CZ):. a novel way of seeding the melt to grow bulk single crystal

NASA Astrophysics Data System (ADS)

Sankaranarayanan, K.; Ramasamy, P.

1998-09-01

A novel microtube seeding has been proposed in the conventional Czochralski pulling technique to grow a bulk single crystal. The versatility of the technique has been shown by adopting this method for the growth of benzil. Benzil single crystals having hexagonal facets are grown by this technique called the microtube-Czochralski technique (μT-CZ). Due to capillary rise, a fine column of melt was crystallized inside the microtube, which leads to the formation of the single crystal nucleation and ends up with hexagonal morphology. The reproducibility for getting single crystal is about 80%. It is evident that this technique is more viable to grow a bulk single crystal from the melt without a pregrown-seed. Further, the proposed μT-CZ technique can also be extended to other newer materials with the proper choice of the microtube.

Material and detector properties of cadmium manganese telluride (Cd 1-xMn xTe) crystals grown by the modified floating-zone method

DOE PAGES

Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; ...

2014-12-24

We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd 1-xMn xTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd 1-xMn xTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are freemore » from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

GaSb and Ga1-xInxSb Thermophotovoltaic Cells using Diffused Junction Technology in Bulk Substrates

NASA Astrophysics Data System (ADS)

Dutta, P. S.; Borrego, J. M.; Ehsani, H.; Rajagopalan, G.; Bhat, I. B.; Gutmann, R. J.; Nichols, G.; Baldasaro, P. F.

2003-01-01

This paper presents results of experimental and theoretical research on antimonide- based thermophotovoltaic (TPV) materials and cells. The topics discussed include: growth of large diameter ternary GaInSb bulk crystals, substrate preparation, diffused junction processes, cell fabrication and characterization, and, cell modeling. Ternary GaInSb boules up to 2 inches in diameter have been grown using the vertical Bridgman technique with a novel self solute feeding technique. A single step diffusion process followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency, p-n junction GaSb and GaInSb thermophotovoltaic cells. The optimum junction depth to obtain the highest quantum efficiency and open circuit voltage has been identified based on diffusion lengths (or minority carrier lifetimes), carrier mobility and experimental diffused impurity profiles. Theoretical assessment of the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion in bulk substrates has been performed using PC-1D one-dimensional computer simulations. Several factors affecting the cell performances such as the effects of emitter doping profile, emitter thickness and recombination mechanisms (Auger, radiative and Shockley-Read-Hall), the advantages of surface passivation and the impact of dark current due to the metallic grid will be discussed. The conditions needed for diffused junction cells on ternary and binary substrates to achieve similar performance to the epitaxially grown lattice- matched quaternary cells are identified.

Low temperature growth of Ga 1- xIn xP bulk crystals from InSb-rich melt

NASA Astrophysics Data System (ADS)

Gennett, A.; Lewis, D.; Dutta, P. S.

2010-04-01

Bulk growth of phosphorus and arsenic based ternary III-V semiconductor crystals using pseudo-binary melts such as GaP-InP, GaP-GaAs, AlAs-GaAs, etc. is significantly challenging due to the high vapor pressures of group V species in conjunction with slow growth rates and the need for melt replenishment and mixing during growth. Lowering the growth temperature is desirable such that the vapor pressures of P and As can be easily handled. Low growth temperatures could be achieved by using Ga or In rich solutions. However, this approach is less attractive for growing bulk crystals due to several experimental difficulties including sticking of the growth solution to the crucible wall and to the grown crystal, making it challenging for crystal extraction. Growth of ternary crystals from low temperature quaternary melts has been found to be attractive. In this paper, we will present a new method for the growth of Ga 1- xIn xP from InSb rich Ga 1- xIn xP ySb 1- y melts at low growth temperatures in the range of 800-1050 °C. Thermodynamic phase diagrams calculated at various temperatures using a Gibbs free energy minimization software and materials databases commercially available from Thermo-Calc software will be presented along with experimental validation for Ga 1- xIn xP crystals grown at 1000 °C.

Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangla, O., E-mail: onkarmangla@gmail.com; Physics Department, Hindu College, University of Delhi, Delhi, 110007; Roy, S.

2016-05-23

In the present work, gallium nitride (GaN) nanoneedles are grown on quartz substrates using the high fluence ions of GaN produced by hot, dense and extremely non-equlibrium nitrogen plasma in a modified dense plasma focus device. The formation of nanoneedles is obtained from the scanning electron microscopy with mean size of the head of nanoneedles ~ 70 nm. The nanoneedles are found to be poly-crystalline when studied structurally through the X-ray diffraction. The optical properties of nanoneedles studied using absorption spectra which show more absorption for nanoneedles depsoited one shot of ions irradiation. In addition, the band gap of nanoneedles ismore » found to be increased as compared to bulk GaN. The obtained nanoneedles with increased band gap have potential applications in detector systems.« less

Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

DTIC Science & Technology

2013-03-08

tions in the studied SLS structures . The fit of the dependence of the valence- band energy of unstrained InAs1!xSbx on the composition x with a... band . STRUCTURES Bulk InAsSb epilayers on metamorphic buffers and InAsSb/InAs strained-layer superlattices (SLS) were grown on GaSb substrates by solid...meV in InAs and Ev = 0 meV in InSb. For InAsSb with 22.5% Sb grown on GaSb , an unstrained valence- band energy of Ev = !457 meV was obtained. For the

Crystal growth and characterization of bulk Sb2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

2018-04-01

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

High-speed spectral domain polarization-sensitive OCT using a single InGaAs line-scan camera and an optical switch

NASA Astrophysics Data System (ADS)

Lee, Sang-Won; Jeong, Hyun-Woo; Kim, Beop-Min

2010-02-01

We demonstrated high-speed spectral domain polarization-sensitive optical coherence tomography (SD-PSOCT) using a single InGaAs line-scan camera and an optical switch at 1.3-μm region. The polarization-sensitive low coherence interferometer in the system was based on the original free-space PS-OCT system published by Hee et al. The horizontal and vertical polarization light rays split by polarization beam splitter were delivered and detected via an optical switch to a single spectrometer by turns instead of dual spectrometers. The SD-PSOCT system had an axial resolution of 8.2 μm, a sensitivity of 101.5 dB, and an acquisition speed of 23,496 Alines/s. We obtained the intensity, phase retardation, and fast axis orientation images of a biological tissue. In addition, we calculated the averaged axial profiles of the phase retardation in human skin.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-04-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10-9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

PubMed Central

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-01-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

Infrared Photodiodes Made by Low Energy Ion Etching of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy

NASA Astrophysics Data System (ADS)

Yoo, Sung-Shik

Ion etching was used to form junctions on the p-type (111)B Hg_{1-x}Cd_ {x}Te grown by Molecular Beam Epitaxy(MBE). When Hg_{1-x}Cd_{x}Te layers are etched by Ar ions at energies ranging between 300 and 450eV, the top Hg_{1 -x}Cd_{x}Te layer is converted to n-type. The converted region is electrically characterized as a defective n^+-region near the surface, and a low doped n^--region exist below the damaged region. The total thickness of the converted n-type layer was found to be considerable. These results suggest that the creation of the n-type layer is due to the filling of mercury vacancies by mercury atoms displaced by the Ar ion irradiation on the surface. For the performance of the resulting photodiodes on MBE grown (111)B Hg_{1-x}Cd _{x}Te using this technique, the dynamic resistances at 80K are one order of magnitude less than those of junctions made on Liquid Phase Epitaxially and Bulk grown Hg_{1 -x}Cd_{x}Te. The ion etching technique was compared with ion implantation technique by fabricating diodes on the same MBE grown (111)B Hg _{1-x}Cd_{x}Te layers. The result of the comparison illustrates that ion etching technique is as good as ion implantation technique for the fabrication of Hg_{1-x}Cd _{x}Te photodiodes. Also it is believed that the performance of the diodes is limited by a relatively large density of twin defects usually found in MBE grown (111)B Hg_{1-x}Cd _{x}Te.

Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals

PubMed Central

Rodenbücher, C.; Luysberg, M.; Schwedt, A.; Havel, V.; Gunkel, F.; Mayer, J.; Waser, R.

2016-01-01

The homogeneity of Verneuil-grown SrTiO3:Nb crystals was investigated. Due to the fast crystal growth process, inhomogeneities in the donor dopant distribution and variation in the dislocation density are expected to occur. In fact, for some crystals optical studies show variations in the density of Ti3+ states on the microscale and a cluster-like surface conductivity was reported in tip-induced resistive switching studies. However, our investigations by TEM, EDX mapping, and 3D atom probe reveal that the Nb donors are distributed in a statistically random manner, indicating that there is clearly no inhomogeneity on the macro-, micro-, and nanoscale in high quality Verneuil-grown crystals. In consequence, the electronic transport in the bulk of donor-doped crystals is homogeneous and it is not significantly channelled by extended defects such as dislocations which justifies using this material, for example, as electronically conducting substrate for epitaxial oxide film growth. PMID:27577508

Development of low-SWaP and low-noise InGaAs detectors

NASA Astrophysics Data System (ADS)

Fraenkel, R.; Berkowicz, E.; Bikov, L.; Elishkov, R.; Giladi, A.; Hirsh, I.; Ilan, E.; Jakobson, C.; Kondrashov, P.; Louzon, E.; Nevo, I.; Pivnik, I.; Tuito, A.; Vasserman, S.

2017-02-01

In recent years SCD has developed InGaAs/InP technology for Short-Wave Infrared (SWIR) imaging. The first product, Cardinal 640, has a 640×512 (VGA) format at 15μm pitch, and more than two thousand units have already been delivered to customers. Recently we have also introduced Cardinal 1280 which is an SXGA array with 10μm pitch aimed for long-range high end platforms [1]. One of the big challenges facing the SWIR technology is its proliferation to widespread low cost and low SWaP applications, specifically Low Light Level (LLL) and Image Intensifier (II) replacements. In order to achieve this goal we have invested and combined efforts in several design and development directions: 1. Optimization of the InGaAs pixel array, reducing the dark current below 2fA at 20° C in order to save TEC cooling power under harsh light and environmental conditions. 2. Design of a new "Low Noise" ROIC targeting 15e noise floor and improved active imaging capabilities 3. Design of compact, low SWaP and low cost packages. In this context we have developed 2 types of packages: a non-hermetic package with thermo-electric cooler (TEC) and a hermetic TEC-Less ceramic package. 4. Development of efficient TEC-Less algorithms for optimal imaging at both day-light and low light level conditions. The result of these combined efforts is a compact low SWaP detector that provides equivalent performance to Gen III image intensifier under starlight conditions. In this paper we will present results from lab and field experiments that will support this claim.

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jiagui; Wagner, Sean R.; Zhang, Pengpeng

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the (√3 x √3) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelasticmore » inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown (√3 x √3) phase is identical to that of the (√3 x √3) R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. Lastly, these findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.« less

76 FR 8658 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-15

... Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes (IMSBC) Code..., the Coast Guard amended its regulations governing the carriage of solid hazardous materials in bulk to... hazardous bulk solid materials not addressed in the amended regulations. This notice announces that the...

MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

NASA Astrophysics Data System (ADS)

Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

2018-06-01

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

NASA Astrophysics Data System (ADS)

Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael

2014-07-01

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ˜ 10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ˜ 25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μ m to 1 μ m, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L i is varied. A splitting ratio of 50:50 is observed for L i ˜ 9 ± 1 μ m and 1 μ m wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

Pure single-photon emission from In(Ga)As QDs in a tunable fiber-based external mirror microcavity

NASA Astrophysics Data System (ADS)

Herzog, T.; Sartison, M.; Kolatschek, S.; Hepp, S.; Bommer, A.; Pauly, C.; Mücklich, F.; Becher, C.; Jetter, M.; Portalupi, S. L.; Michler, P.

2018-07-01

Cavity quantum electrodynamics is widely used in many solid-state systems for improving quantum emitter performances or accessing specific physical regimes. For these purposes it is fundamental that the non-classical emitter, like a quantum dot or an NV center, matches the cavity mode, both spatially and spectrally. In the present work, we couple single photons stemming from In(Ga)As quantum dots into an open fiber-based Fabry–Pérot cavity. Such a system allows for reaching an optimal spatial and spectral matching for every present emitter and every optical transition, by precisely tuning the cavity geometry. In addition to that, the capability of deterministically and repeatedly locating a single quantum dot enables to compare the behavior of the quantum emitter inside the cavity with respect to before it is placed inside. The presented open-cavity system shows full flexibility by precisely tuning in resonance different QD transitions, namely excitons, biexcitons and trions. A measured Purcell enhancement of 4.4 ± 0.5 is obtained with a cavity finesse of about 140, while still demonstrating a single-photon source with vanishing multi-photon emission probability.

Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

NASA Astrophysics Data System (ADS)

Ni, Kai; Sternberg, Andrew L.; Zhang, En Xia; Kozub, John A.; Jiang, Rong; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M.; Alles, Michael L.; McMorrow, Dale; Lin, Jianqiang; Vardi, Alon; del Alamo, Jesús

2017-08-01

A tunable wavelength laser system and high-resolution transient capture system are introduced to characterize transients in high-mobility MOSFETs. The experimental configuration enables resolution of fast transient signals and new understanding of charge collection mechanisms. The channel layer is critical in the charge collection process for the InGaAs FinFETs examined here. The transient current mainly comes from the channel current, due to shunt effects and parasitic bipolar effects, instead of the junction collection. The charge amplification factor is found to be as high as 14, which makes this technology relatively sensitive to transient radiation. The peak current is inversely proportional to the device gate length. Simulations show that the parasitic bipolar effect is due to source-to-channel barrier lowering caused by hole accumulation in the source and channel. Charge deposited in the channel causes prompt current, while charge deposited below the channel causes delayed and slow current.

A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

NASA Astrophysics Data System (ADS)

Lin, Jianqiang; Kim, Tae-Woo; Antoniadis, Dimitri A.; del Alamo, Jesús A.

2012-06-01

We present a novel n-type InGaAs quantum-well metal-oxide-semiconductor field-effect transistor (QW-MOSFET) fabricated by a self-aligned gate-last process and investigate relevant Si-like manufacturing issues in future III-V MOSFETs. The device structure features a composite InP/Al2O3 gate barrier with a capacitance equivalent thickness (CET) of 3 nm and non alloyed Mo ohmic contacts. We have found that RIE introduces significant damage to the intrinsic device resulting in poor current drive and subthreshold swing. The effect is largely removed through a thermal annealing step. Thermally annealed QW-MOSFETs exhibit a subthreshold swing of 95 mV/dec, indicative of excellent interfacial characteristics. The peak mobility of the MOSFET is 2780 cm2 V-1 s-1.

Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5:Ce single crystalline films

NASA Astrophysics Data System (ADS)

Wantong, Kriangkrai; Yawai, Nattasuda; Chewpraditkul, Weerapong; Kucera, Miroslav; Hanus, Martin; Nikl, Martin

2017-06-01

Luminescence and scintillation properties of Y2SiO5:Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with α - and γ- rays. At 662 keV γ- rays, the LY value of 12,410 ph/MeV obtained for YSO:Ce -LPE is lower than that of 20,150 ph/MeV for YSO:Ce -SC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV α- rays. The ratio of LY under excitation with α- and γ- rays (α/γ ratio) is determined. Dependence of LY on an amplifier shaping time (0.5-12 μs) is also measured.

Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector.

PubMed

Han, Sang-Pil; Ko, Hyunsung; Kim, Namje; Lee, Won-Hui; Moon, Kiwon; Lee, Il-Min; Lee, Eui Su; Lee, Dong Hun; Lee, Wangjoo; Han, Seong-Tae; Choi, Sung-Wook; Park, Kyung Hyun

2014-11-17

We demonstrate real-time continuous-wave terahertz (THz) line-scanned imaging based on a 1 × 240 InGaAs Schottky barrier diode (SBD) array detector with a scan velocity of 25 cm/s, a scan line length of 12 cm, and a pixel size of 0.5 × 0.5 mm². Foreign substances, such as a paper clip with a spatial resolution of approximately 1 mm that is hidden under a cracker, are clearly detected by this THz line-scanning system. The system consists of the SBD array detector, a 200-GHz gyrotron source, a conveyor system, and several optical components such as a high-density polyethylene cylindrical lens, metal cylindrical mirror, and THz wire-grid polarizer. Using the THz polarizer, the signal-to-noise ratio of the SBD array detector improves because the quality of the source beam is enhanced.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

NASA Astrophysics Data System (ADS)

Deshpande, Manisha; Maske, Dilip; Choudhari, Rashmi; Arora, Brij Mohan; Gadkari, Dattatray

2016-05-01

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

NASA Astrophysics Data System (ADS)

Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

Large area bulk superconductors

DOEpatents

Miller, Dean J.; Field, Michael B.

2002-01-01

A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

Arrhenius Behavior of the Bulk Na-Ion Conductivity in Na3Sc2(PO4)3 Single Crystals Observed by Microcontact Impedance Spectroscopy.

PubMed

Rettenwander, Daniel; Redhammer, Günther J; Guin, Marie; Benisek, Artur; Krüger, Hannes; Guillon, Olivier; Wilkening, Martin; Tietz, Frank; Fleig, Jürgen

2018-03-13

NASICON-based solid electrolytes with exceptionally high Na-ion conductivities are considered to enable future all solid-state Na-ion battery technologies. Despite 40 years of research the interrelation between crystal structure and Na-ion conduction is still controversially discussed and far from being fully understood. In this study, microcontact impedance spectroscopy combined with single crystal X-ray diffraction, and differential scanning calorimetry is applied to tackle the question how bulk Na-ion conductivity σ bulk of sub-mm-sized flux grown Na 3 Sc 2 (PO 4 ) 3 (NSP) single crystals is influenced by supposed phase changes (α, β, and γ phase) discussed in literature. Although we found a smooth structural change at around 140 °C, which we assign to the β → γ phase transition, our conductivity data follow a single Arrhenius law from room temperature (RT) up to 220 °C. Obviously, the structural change, being mainly related to decreasing Na-ion ordering with increasing temperature, does not cause any jumps in Na-ion conductivity or any discontinuities in activation energies E a . Bulk ion dynamics in NSP have so far rarely been documented; here, under ambient conditions, σ bulk turned out to be as high as 3 × 10 -4 S cm -1  at RT ( E a, bulk = 0.39 eV) when directly measured with microcontacts for individual small single crystals.

Arrhenius Behavior of the Bulk Na-Ion Conductivity in Na3Sc2(PO4)3 Single Crystals Observed by Microcontact Impedance Spectroscopy

PubMed Central

2018-01-01

NASICON-based solid electrolytes with exceptionally high Na-ion conductivities are considered to enable future all solid-state Na-ion battery technologies. Despite 40 years of research the interrelation between crystal structure and Na-ion conduction is still controversially discussed and far from being fully understood. In this study, microcontact impedance spectroscopy combined with single crystal X-ray diffraction, and differential scanning calorimetry is applied to tackle the question how bulk Na-ion conductivity σbulk of sub-mm-sized flux grown Na3Sc2(PO4)3 (NSP) single crystals is influenced by supposed phase changes (α, β, and γ phase) discussed in literature. Although we found a smooth structural change at around 140 °C, which we assign to the β → γ phase transition, our conductivity data follow a single Arrhenius law from room temperature (RT) up to 220 °C. Obviously, the structural change, being mainly related to decreasing Na-ion ordering with increasing temperature, does not cause any jumps in Na-ion conductivity or any discontinuities in activation energies Ea. Bulk ion dynamics in NSP have so far rarely been documented; here, under ambient conditions, σbulk turned out to be as high as 3 × 10–4 S cm–1 at RT (Ea, bulk = 0.39 eV) when directly measured with microcontacts for individual small single crystals. PMID:29606799

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

NASA Astrophysics Data System (ADS)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Optical properties of single ZnTe nanowires grown at low temperature

NASA Astrophysics Data System (ADS)

Artioli, A.; Rueda-Fonseca, P.; Stepanov, P.; Bellet-Amalric, E.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Kheng, K.; Tatarenko, S.; Ferrand, D.; Cibert, J.

2013-11-01

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm2). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are ⟨111⟩ oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

Food potentials of some unconventional oilseeds grown in Nigeria--a brief review.

PubMed

Badifu, G I

1993-05-01

A brief review of literature on kernels of Citrullus and Cucumeropsis ('egusi' melon) species, Telfairia occidentalis (fluted pumpkin), Lagenaria (gourd) species of all of Cucurbitaceae family and other oilseeds such as Pentaclethra macrophylla (African oil bean), Parkia spp. (African locust bean) both of Mimosaceae family and Butyrospermum paradoxum (shea butter) of Sapotaceae family which are grown and widely used as food in Nigeria is presented. The kernels of species of Cucurbitaceae form the bulk of unconventional oilseeds used for food in Nigeria. The nutritional value of some of the kernels and the physicochemical properties and storage stability of the oils obtained from them are discussed. The various consumable forms in which they exist are also described. The problems and prospects of these neglected oilseeds in Nigeria are highlighted.

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bracher, Gregor; Schraml, Konrad; Blauth, Mäx

2014-07-21

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured bymore » the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.« less

Biocompatibility Study of Zirconium-Based Bulk Metallic Glasses for Orthopedic Applications

NASA Astrophysics Data System (ADS)

He, Wei; Chuang, Andrew; Cao, Zheng; Liaw, Peter K.

2010-07-01

Bulk metallic glasses (BMGs) represent an emerging class of materials that offer an attractive combination of properties, such as high strength, low modulus, good fatigue limit, and near-net-shape formability. The BMGs have been explored in mechanical, chemical, and magnetic applications. However, little research has been attracted in the biomedical field. In this work, we study the potential of BMGs for the orthopedic repair and replacement. We report the biocompatibility study of zirconium (Zr)-based solid BMGs using mouse osteoblast cells. Cell attachment, proliferation, and differentiation are compared to Ti-6Al-4V, a well-studied alloy biomaterial. Our in-vitro study has demonstrated that cells cultured on the Zr-based BMG substrate showed higher attachment, alkaline phosphatase activity, and bone matrix deposition compared to those grown on the control Ti alloy substrate. Cytotoxicity staining also revealed the remarkable viability of cells growing on the BMG substrates.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

PubMed

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

2018-01-01

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructure and trapped field of YBCO bulk single-grain superconductors prepared by interior seeding

NASA Astrophysics Data System (ADS)

Radusovska, M.; Diko, P.; Piovarci, S.; Park, S.-D.; Jun, B.-H.; Kim, C.-J.

2017-10-01

The microstructural analyses of YBCO bulk single-grain superconductors grown by interior seeding with taller and shorter upper pellets have shown that a suitable upper pellet height can lower the porosity in the upper part of the sample, produce a more appropriate distribution of pinning centres in the form of Y-211 particles and suppress subgrain formation with a higher crystal misalignment in the c-growth sector (c-GS), which can lead to a higher measured trapped magnetic field and a more uniform cone of the trapped-field profile. The observed bulging of the sample surface at the c-GS can be explained by the edge melt distribution model, which shows that macroscopic mass transport to the growth sector occurs with higher growth rates.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshpande, Manisha, E-mail: manishauj@gmail.com; Department of Physics, Mithibai College, Vile Parle; Maske, Dilip

2016-05-06

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS.more » The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.« less

Spatial variation of deuterium enrichment in bulk water of snowgum leaves.

PubMed

Santrucek, Jirí; Kveton, Jirí; Setlík, Jirí; Bulícková, Lenka

2007-01-01

Deuterium enrichment of bulk water was measured and modeled in snowgum (Eucalyptus pauciflora Sieber ex Sprengel) leaves grown under contrasting air and soil humidity in arid and wet conditions in a glasshouse. A map of the enrichment was constructed with a resolution of 4 mm by using a newly designed cryodistillation method. There was progressively increasing enrichment in both longitudinal (along the leaf midrib) and transversal (perpendicular to the midrib) directions, most pronounced in the arid-grown leaf. The whole-leaf average of the enrichment was well below the value estimated by the Craig-Gordon model. The discrepancy between model and measurements persisted when the estimates were carried out separately for the leaf base and tip, which differed in temperature and stomatal conductance. The discrepancy was proportional to the transpiration rate, indicating the significance of diffusion-advection interplay (Péclet effect) of deuterium-containing water molecules in small veins close to the evaporating sites in the leaf. Combined Craig-Gordon and desert-river models, with or without the Péclet number, P, were used for predicting the leaf longitudinal enrichment. The predictions without P overestimated the measured values of deltadeuterium. Fixed P value partially improved the coincidence. We suggest that P should vary along the leaf length l to reconcile the modeled data with observations of longitudinal enrichment. Local values of P, P(l), integrating the upstream fraction of water used or the leaf area, substantially improved the model predictions.

Bulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries.

PubMed

Singh, Amit V; Khodadadi, Behrouz; Mohammadi, Jamileh Beik; Keshavarz, Sahar; Mewes, Tim; Negi, Devendra Singh; Datta, Ranjan; Galazka, Zbigniew; Uecker, Reinhard; Gupta, Arunava

2017-08-01

Spinel ferrite NiFe 2 O 4 thin films have been grown on three isostructural substrates, MgAl 2 O 4 , MgGa 2 O 4 , and CoGa 2 O 4 using pulsed laser deposition. These substrates have lattice mismatches of 3.1%, 0.8%, and 0.2%, respectively, with NiFe 2 O 4 . As expected, the films grown on MgAl 2 O 4 substrate show the presence of the antiphase boundary defects. However, no antiphase boundaries (APBs) are observed for films grown on near-lattice-matched substrates MgGa 2 O 4 and CoGa 2 O 4 . This demonstrates that by using isostructural and lattice-matched substrates, the formation of APBs can be avoided in NiFe 2 O 4 thin films. Consequently, static and dynamic magnetic properties comparable with the bulk can be realized. Initial results indicate similar improvements in film quality and magnetic properties due to the elimination of APBs in other members of the spinel ferrite family, such as Fe 3 O 4 and CoFe 2 O 4 , which have similar crystallographic structure and lattice constants as NiFe 2 O 4 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

49 CFR 172.514 - Bulk packagings.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Bulk packagings. 172.514 Section 172.514... SECURITY PLANS Placarding § 172.514 Bulk packagings. (a) Except as provided in paragraph (c) of this section, each person who offers for transportation a bulk packaging which contains a hazardous material...

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Ishizawa, Mamoru; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

2018-02-01

We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s, and Bi and Cu deficiencies in the films.

Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

1997-01-01

The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

Fiber Treatment Effects on Bioreactor Bulk Fluid Trends

NASA Technical Reports Server (NTRS)

Ellis, Ronald II

2013-01-01

In order to facilitate the exploration of worlds beyond the borders of our planet, it is necessary to maintain sustainable levels of clean water. The remediation of water via Membrane Aerated Bioreactors (MABRs) is one such method, and the focus of this study. MARRs rely on healthy biofilms grown on hollow fiber membranes to clean non-potable water. These biofilms can take weeks to months to establish. Therefore, various fiber treatments and two inoculums were evaluated for their effect on rapid biofilm formation. Fiber treatments are as follows: sanding of the fibers with 1500 and 8000 grit sandpaper, immersion of the fibers in a 1% hydrofluoric acid solution for 12 seconds and 15 minutes, and the immersion of the fibers in a Fluoroetch® solution for 18 seconds and 5 minutes. The two inoculums utilized were sourced from healthy, established MARRs; Texas Tech University (TTU) MABR "TRL5" and Kennedy Space Center (KSC) MABR "R3". Data attained from direct bacterial cell counts of the reactor bulk fluids via fluorescent microscopy, suggests that the fluoroetching treatment combined with the TTU inoculum show the greatest biofilm creation.

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Novikov, S. V.; Powell, R. E. L.; Staddon, C. R.; Kent, A. J.; Foxon, C. T.

2014-10-01

Currently there is high level of interest in developing of vertical device structures based on the group III nitrides. We have studied n- and p-doping of free-standing zinc-blende GaN grown by plasma-assisted molecular beam epitaxy (PA-MBE). Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN. Controllable levels of doping with Si and Mg in free-standing zinc-blende GaN have been achieved by PA-MBE. The Si and Mg doping depth uniformity through the zinc-blende GaN layers have been confirmed by secondary ion mass spectrometry (SIMS). Controllable Si and Mg doping makes PA-MBE a promising method for the growth of conducting group III-nitrides bulk crystals.

Stress-induced magnetic properties of PLD-grown high-quality ultrathin YIG films

NASA Astrophysics Data System (ADS)

Bhoi, Biswanath; Kim, Bosung; Kim, Yongsub; Kim, Min-Kwan; Lee, Jae-Hyeok; Kim, Sang-Koog

2018-05-01

Yttrium iron garnet (YIG:Y3Fe5O12) thin films were grown on (111) gadolinium gallium garnet (Gd3Ga5O12, GGG) substrates using pulsed-laser deposition under several different deposition and annealing conditions. X-ray diffraction measurements revealed that the crystallographical orientation of the YIG films is pseudomorphic to and the same as that of the GGG substrate, with a slight rhombohedral distortion along the surface normal. Furthermore, X-ray reciprocal space mapping evidenced that in-situ annealed YIG films during film growth are under compressive strain, whereas ex-situ annealed films have two different regions under compressive and tensile strain. The saturation magnetization ( 4 π M S ) of the films was found to vary, according to the deposition conditions, within the range of 1350 to 1740 G, with a very low coercivity of H C < 5 Oe. From ferromagnetic resonance (FMR) measurements, we estimated the effective saturation magnetization ( 4 π M e f f ) to be 1810 to 2530 G, which are larger than that of single crystalline bulk YIG (˜1750 G). Such high values of 4 π M e f f are attributable to the negative anisotropy field ( H U ) that increases in size with increasing compressive in-plane strain induced in YIG films. The damping constant ( α G ) of the grown YIG films was found to be quite sensitive to the strain employed. The lowest value of α G obtained was 2.8 × 10-4 for the case of negligible strain. These results suggest a means of tailoring H U and α G in the grown YIG films by the engineering of strain for applications in spintronics and magneto-optical devices.

Defect engineering and luminescence characterization in bulk and thin film polycrystalline silicon

NASA Astrophysics Data System (ADS)

Koshka, Yaroslav

The passivation of recombination centers and the monitoring of passivation efficiency are critical for successful utilization of polycrystalline silicon (poly-Si) in solar cells and in thin-film transistors. Two important classes of poly-Si-thin films and bulk wafers-can respond differently to passivation processes (hydrogenation efficiency, possibilities of extrinsic and intrinsic gettering, etc.) and demand different approaches to their characterization. The effect of photoluminescence (PL) enhancement using ultrasound treatment (UST) was studied in poly-Si and amorphous-Si films on glass. In addition to the previously documented growth of the 0.7 eV oxygen related band in poly-Si films, generation and dramatic enhancement of a new luminescence maximum at about 0.98 eV occurs in films containing a superposition of poly-Si and alpha-Si phases. A model of ultrasound stimulated hydrogen detrapping followed by hydrogen diffusion and passivation of non-radiative centers was developed. Room temperature photoluminescence (PL) mapping was used to monitor improvement of recombination properties in bulk photovoltaic poly-Si during solar cell fabrication. Analysis of the statistical distribution of the values of PL enhancement shows that the contribution of individual processing steps to the increasing PL are different in nature. A correlation between PL mapping and minority carrier diffusion length was performed and quantitatively described. A method of obtaining separate information about the recombination properties of the bulk and the p/n junction regions of solar cells was developed. The method is based on measurements of PL distribution under different biases applied to solar cells and under different intensities of the excitation light. A PL study at 0.8 eV spectral maximum and comparison with the band-to-band PL was performed. Influence of the defects responsible for the 0.8 eV defect band was insignificant in as-grown wafers. It was revealed, however, that these

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, S.; Ghosh, K.; Jejurikar, S.

Graphical abstract: - Highlights: • Investigation of ground state energy in single and multi-layered InAs/GaAs QD. • Strain reducing layer (InGaAs) prevents the formation of non-radiative. • Strain reducing layer (InGaAs) is responsible for high activation energy. • Significant deviation from the Varshni model, E(T) = E − αT{sup 2}/T + β. - Abstract: Vertically coupled, multilayered InAs/GaAs quantum dots (QDs) covered with thin InGaAs strain-reducing layers (SRLs) are in demand for various technological applications. We investigated low temperature photoluminescence of single and multilayered structures in which the SRL thickness was varied. The SRL layer was responsible for high activationmore » energies. Deviation of experimental data from the Varshni (1967) model, E(T) = E − ∞ T{sup 2}/T + β, suggests that the InAs-layered QDs have properties different from those in bulk material. Anomalous ground-state peak linewidths (FWHM), especially for annealed multilayer structures, were observed. A ground-state peak blue-shift with a broadened linewidth was also observed. Loss of intensity was detected in samples annealed at 800 °C. Presence of SRLs prevents formation of non-radiative centers under high temperature annealing. The results indicate the potential importance of such structures in optoelectronic applications.« less

Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

1992-01-01

An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

A novel multi-detection technique for three-dimensional reciprocal-space mapping in grazing-incidence X-ray diffraction.

PubMed

Schmidbauer, M; Schäfer, P; Besedin, S; Grigoriev, D; Köhler, R; Hanke, M

2008-11-01

A new scattering technique in grazing-incidence X-ray diffraction geometry is described which enables three-dimensional mapping of reciprocal space by a single rocking scan of the sample. This is achieved by using a two-dimensional detector. The new set-up is discussed in terms of angular resolution and dynamic range of scattered intensity. As an example the diffuse scattering from a strained multilayer of self-assembled (In,Ga)As quantum dots grown on GaAs substrate is presented.

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Bulk undercooling

NASA Technical Reports Server (NTRS)

Kattamis, T. Z.

1984-01-01

Bulk undercooling methods and procedures will first be reviewed. Measurement of various parameters which are necessary to understand the solidification mechanism during and after recalescence will be discussed. During recalescence of levitated, glass-encased large droplets (5 to 8 mm diam) high speed temperature sensing devices coupled with a rapid response oscilloscope are now being used at MIT to measure local thermal behavior in hypoeutectic and eutectic binary Ni-Sn alloys. Dendrite tip velocities were measured by various investigators using thermal sensors or high speed cinematography. The confirmation of the validity of solidification models of bulk-undercooled melts is made difficult by the fineness of the final microstructure, the ultra-rapid evolution of the solidifying system which makes measurements very awkward, and the continuous modification of the microstructure which formed during recalescence because of precipitation, remelting and rapid coarsening.

2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers

NASA Astrophysics Data System (ADS)

Deninger, Anselm J.; Roggenbuck, A.; Schindler, S.; Preu, S.

2015-03-01

To date, exploiting the full bandwidth of state-of-the-art InGaAs photomixers for generation and detection of continuous-wave (CW) THz radiation (typ. ~50 GHz to ~3 THz) required complex and costly external-cavity diode lasers with motorized resonator control. Distributed feedback (DFB) lasers, by contrast, are compact and inexpensive, but the tuning range per diode is limited to ~600 GHz at 1.5 μm. In this paper, we show that a combination of three DFB diodes covers the complete frequency range from 0 - 2750 GHz without any gaps. In combination with InGaAs-based photomixers for terahertz generation and detection, the system achieves a dynamic range of > 100 dB at 56 GHz, 64 dB at 1000 GHz, and 26 dB at 2500 GHz. A field-programmable gate array (FPGA)-based lock-in amplifier permits a flexible adjustment of the integration time from 0.5 ms to 600 ms. Employing an optimized "fast scan" mode, a spectrum of ~1200 GHz - the bandwidth of each subset of two lasers - and 40 MHz steps is acquired in less than one minute, still maintaining a reasonable dynamic range. To the best of our knowledge, the bandwidth of 2.75 THz presents a new record for DFB-based CW-terahertz systems.

Tunneling Spectroscopy of MoN and NbxTi1-xN Thin Films Grown by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Chaoyue; Groll, Nickolas; Klug, Jeffrey; Becker, Nicholas; Altin, Serdar; Proslier, Thomas; Zasadzinski, John

2014-03-01

Tunneling I(V) and dI/dV vs. V are reported on superconducting thin films of MoN and NbxTi1-xN using a point contact method with a Au tip. The films are grown by the chemical process of atomic layer deposition (ALD) onto various substrates (Si, quartz, sapphire) held at 450 C. Resistively measured superconducting Tc values up to 12K and 13K are found for the MoN and NbxTi1-xN respectively. Artificial tunnel barriers (1-3 nm thick) of Al2O3, also grown by ALD, are shown to provide much improved tunneling characteristics compared to the native oxides. Relatively high quality gap features are observed with zero-bias conductance values as low as ~ 10% of the high bias values. Gap parameters Δ ~ 2.0meV are found for the MoN and Δ ~ 2.0-2.4 meV for the NbxTi1-xN which follow the BCS temperature dependence and close near the measured film Tc indicating bulk superconductivity at the surface. The suitability of such conformal ALD grown films for potential superconducting devices is discussed. This work was supported by the U.S. Department of Energy, Office of Science under contract No. DE-AC02-06CH11357.

Bulk crystalline optomechanics

NASA Astrophysics Data System (ADS)

Renninger, W. H.; Kharel, P.; Behunin, R. O.; Rakich, P. T.

2018-06-01

Control of long-lived, high-frequency phonons using light offers a path towards creating robust quantum links, and could lead to tools for precision metrology with applications to quantum information processing. Optomechanical systems based on bulk acoustic-wave resonators are well suited for this goal in light of their high quality factors, and because they do not suffer from surface interactions as much as their microscale counterparts. However, so far these phonons have been accessible only electromechanically, using piezoelectric interactions. Here, we demonstrate customizable optomechanical coupling to macroscopic phonon modes of a bulk acoustic-wave resonator at cryogenic temperatures. These phonon modes, which are formed by shaping the surfaces of a crystal into a plano-convex phononic resonator, yield appreciable optomechanical coupling rates, providing access to high acoustic quality factors (4.2 × 107) at high phonon frequencies (13 GHz). This simple approach, which uses bulk properties rather than nanostructural control, is appealing for the ability to engineer optomechanical systems at high frequencies that are robust against thermal decoherence. Moreover, we show that this optomechanical system yields a unique form of dispersive symmetry-breaking that enables phonon heating or cooling without an optical cavity.

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Positron Spectroscopy of Hydrothermally Grown Actinide Oxides

DTIC Science & Technology

2014-03-27

POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES THESIS Edward C. Schneider...United States Government. AFIT-ENP-14-M-33 POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES THESIS...33 POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES Edward C. Schneider, BS Captain, USAF Approved

Relative entropy equals bulk relative entropy

DOE PAGES

Jafferis, Daniel L.; Lewkowycz, Aitor; Maldacena, Juan; ...

2016-06-01

We consider the gravity dual of the modular Hamiltonian associated to a general subregion of a boundary theory. We use it to argue that the relative entropy of nearby states is given by the relative entropy in the bulk, to leading order in the bulk gravitational coupling. We also argue that the boundary modular flow is dual to the bulk modular flow in the entanglement wedge, with implications for entanglement wedge reconstruction.

Magnetic properties of single-phase MnBi grown from MnBi{sub 49} melt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, X. F.; Si, P. Z., E-mail: pzsi@cjlu.edu.cn; Feng, H.

2014-05-07

The single-phase NiAs-type MnBi, embedded in Bi matrix, was grown from homogeneous MnBi{sub 49} melt at low temperatures to prevent the formation of Mn{sub 1.08}Bi. An abrupt magnetization change was observed at ∼240 K. The origin of this change was ascribed to the movement of the Mn atoms between the regular sites and the interstitial sites in the MnBi lattices. The splitting of the x-ray photoelectron lines of MnBi indicates the presence of two binding states of Mn atoms, one of which was ascribed to interstitial Mn atoms. A large coercivity up to 1.79 T at 400 K was observed in the as-grownmore » bulk isotropic MnBi alloys.« less

Anomalous three-dimensional bulk ac conduction within the Kondo gap of SmB 6 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laurita, N. J.; Morris, C. M.; Koohpayeh, S. M.

The Kondo insulator SmB 6 has long been known to display anomalous transport behavior at low temperatures, T < 5 K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gapped system. Some recent theoretical calculations suggest that SmB 6 may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. We investigate themore » low energy optical conductivity within the hybridization gap of single crystals of SmB 6 via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant three-dimensional bulk conduction originating within the Kondo gap. Although SmB 6 may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB 6 is discussed. In addition, the well-defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R / square ≥ 1000 Ω .« less

Anomalous three-dimensional bulk ac conduction within the Kondo gap of SmB 6 single crystals

DOE PAGES

Laurita, N. J.; Morris, C. M.; Koohpayeh, S. M.; ...

2016-10-21

The Kondo insulator SmB 6 has long been known to display anomalous transport behavior at low temperatures, T < 5 K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gapped system. Some recent theoretical calculations suggest that SmB 6 may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. We investigate themore » low energy optical conductivity within the hybridization gap of single crystals of SmB 6 via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant three-dimensional bulk conduction originating within the Kondo gap. Although SmB 6 may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB 6 is discussed. In addition, the well-defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R / square ≥ 1000 Ω .« less

Scanning tunneling spectroscopic (STS) studies of magnetically doped MBE-grown topological insulators (TIs)

NASA Astrophysics Data System (ADS)

Chu, Hao; Teague, Marcus; Chen, Chien-Chang; Woodward, Nicholas; Yeh, Nai-Chang; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Kang; Caltech Collaboration; UCLA Collaboration

2013-03-01

We conduct STS studies on MBE-grown heterostructures of non-magnetic TI (Bi2Se3) with a range of thicknesses (d = 1, 3, 5, 7 quintuple layers, QL) on top of 7-QL magnetically doped TI (Cr-doped Bi2Se3) . For d = 1 and 3-QL, a spatially homogeneous magnetism-induced surface gap (as large as about 150 meV for d = 1-QL) is observed at 77 K, whereas gapless Dirac spectra are found for d = 5 and 7-QL, suggesting that the effective magnetic length for Cr-doped Bi2Se3 is approximately 4 ~ 5-QL. These findings are further corroborated by ARPES and bulk electrical transport measurements. The magnetism-induced surface gap differs from those found in pure Bi2Se3 and (Bi0.5Sb0.5)2 Te3 films of thicknesses smaller than 6-QL, because the latter are due to overlaps of wave functions between the surface and interface layers, which lead to Rashba-like spin-orbit splitting and spin-preserving quasiparticle interference wave-vectors. In contrast, STS studies of TIs with magnetism-induced surface gap do not yield any quasiparticle interferences for energies within the bulk Bi2Se3 gap. Finally, comparative STS studies of pure and magnetically doped TIs in high magnetic fields will be discussed. This work was supported by DARPA.

Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

NASA Astrophysics Data System (ADS)

Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

2011-06-01

We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

Meteoroid Bulk Density and Ceplecha Types

NASA Technical Reports Server (NTRS)

Blaauw, R. C.; Moser, D. E.; Moorhead, A. V.

2017-01-01

The determination of asteroid bulk density is an important aspect of Near Earth Object (NEO) characterization. A fraction of meteoroids originate from asteroids (including some NEOs), thus in lieu of mutual perturbations, satellites, or expensive spacecraft missions, a study of meteoroid bulk densities can potentially provide useful insights into the densities of NEOs and PHOs (Potentially Hazardous Objects). Meteoroid bulk density is still inherently difficult to measure, and is most often determined by modeling the ablation of the meteoroid. One approach towards determining a meteoroid density distribution entails using a more easily measured proxy for the densities, then calibrating the proxy with known densities from meteorite falls, ablation modelling, and other sources. An obvious proxy choice is the Ceplecha type, KB (Ceplecha, 1958), which is thought to indicate the strength of a meteoroid and often correlated to different bulk densities in literature. KB is calculated using the air density at the beginning height of the meteor, the initial velocity, and the zenith angle of the radiant; quantities more readily determined than meteoroid bulk density itself. Numerical values of K(sub B) are sorted into groups (A, B, C, etc.), which have been matched to meteorite falls or meteor showers with known composition such as the porous Draconids. An extensive survey was conducted to establish the strength of the relationship between bulk density and K(sub B), specifically looking at those that additionally determined K(sub B) for the meteors. In examining the modeling of high-resolution meteor data from Kikwaya et al. (2011), the correlation between K(sub B) and bulk density was not as strong as hoped. However, a distinct split by dynamical type was seen with Jovian Tisserand parameter (T(sub J)), with meteoroids from Halley Type comets (T(sub J) < 2) exhibiting much lower bulk densities than those originating from Jupiter Family comets and asteroids (T(sub J) > 2

Stability domain of alumina thermally grown on Fe-Cr-Al-based model alloys and modified surface layers exposed to oxygen-containing molten Pb

NASA Astrophysics Data System (ADS)

Jianu, A.; Fetzer, R.; Weisenburger, A.; Doyle, S.; Bruns, M.; Heinzel, A.; Hosemann, P.; Mueller, G.

2016-03-01

The paper gives experimental results concerning the morphology, composition, structure and thickness of the oxide scales grown on Fe-Cr-Al-based bulk alloys during exposure to oxygen-containing molten lead. The results are discussed and compared with former results obtained on Al-containing surface layers, modified by melting with intense pulsed electron beam and exposed to similar conditions. The present and previous results provide the alumina stability domain and also the criterion of the Al/Cr ratio for the formation of a highly protective alumina layer on the surface of Fe-Cr-Al-based alloys and on modified surface layers exposed to molten lead with 10-6 wt.% oxygen at 400-600 °C. The protective oxide scales, grown on alumina-forming Fe-Cr-Al alloys under the given experimental conditions, were transient aluminas, namely, kappa-Al2O3 and theta-Al2O3.

Bulk-wave ultrasonic propagation imagers

NASA Astrophysics Data System (ADS)

Abbas, Syed Haider; Lee, Jung-Ryul

2018-03-01

Laser-based ultrasound systems are described that utilize the ultrasonic bulk-wave sensing to detect the damages and flaws in the aerospace structures. These systems apply pulse-echo or through transmission methods to detect longitudinal through-the-thickness bulk-waves. These thermoelastic waves are generated using Q-switched laser and non-contact sensing is performed using a laser Doppler vibrometer (LDV). Laser-based raster scanning is performed by either twoaxis translation stage for linear-scanning or galvanometer-based laser mirror scanner for angular-scanning. In all ultrasonic propagation imagers, the ultrasonic data is captured and processed in real-time and the ultrasonic propagation can be visualized during scanning. The scanning speed can go up to 1.8 kHz for two-axis linear translation stage based B-UPIs and 10 kHz for galvanometer-based laser mirror scanners. In contrast with the other available ultrasound systems, these systems have the advantage of high-speed, non-contact, real-time, and non-destructive inspection. In this paper, the description of all bulk-wave ultrasonic imagers (B-UPIs) are presented and their advantages are discussed. Experiments are performed with these system on various structures to proof the integrity of their results. The C-scan results produced from non-dispersive, through-the-thickness, bulk-wave detection show good agreement in detection of structural variances and damage location in all inspected structures. These results show that bulk-wave UPIs can be used for in-situ NDE of engineering structures.

COUGAR: a liquid nitrogen cooled InGaAs camera for astronomy and electro-luminescence

NASA Astrophysics Data System (ADS)

Van Bogget, Urbain; Vervenne, Vincent; Vinella, Rosa Maria; van der Zanden, Koen; Merken, Patrick; Vermeiren, Jan

2014-06-01

A SWIR FPA was designed and manufactured with 640*512 pixels, 20 μm pitch and InGaAs detectors for electroluminescence characterization and astronomical applications in the [0.9 - 1.55 μm] range. The FPA is mounted in a liquid nitrogen dewar and is operated by a low noise frontend electronics. One of the biggest problem in designing sensors and cameras for electro-luminescence measurements is the autoillumination of the detectors by the readout circuit. Besides of proper shielding of the detectors, the ROIC shall be optimized for minimal electrical activity during the integration time of the very-weak signals coming from the circuit under test. For this reason a SFD (or Source Follower per Detector) architecture (like in the Hawaii sensor) was selected, resulting in a background limited performance of the detector. The pixel has a (somewhat arbitrary) full well capacity of 400 000 e- and a sensitivity of 2.17 μV/e-. The dark signal is app. 1 e-/pixel/sec and with the appropriate Fowler sampling the dark noise lowers below 5 e-rms. The power consumption of the circuit is limited 2 mW, allowing more than 24 hours of operation on less than 1 l of liquid nitrogen. The FPA is equipped with 4 outputs (optional readout on one single channel) and is capable of achieving 3 frames per second. Due to the non-destructive readout it is possible to determine in a dynamic way the optimal integration time for each observation. The Cougar camera is equipped with ultra-low noise power supply and bias lines; the electronics contain also a 24 bit AD converter to fully exploit the sensitivity of the FPA and the camera.

Influence of Hydroponically Grown Hoyt Soybeans and Radiation Encountered on Mars Missions on the Yield and Quality of Soymilk and Tofu

NASA Technical Reports Server (NTRS)

Wilson, Lester A.

2005-01-01

Soybeans were chosen for hmar and planetary missions due to their nutritive value and ability to produce oil and protein for further food applications. However, soybeans must be processed into foods prior to crew consumption. Wilson et al. (2003) raised questions about (1) the influence of radiation (on germination and functional properties) that the soybeans would be exposed to during bulk storage for a Mars mission, and (2) the impact of using hydroponically grown versus field grown soybeans on the yield and quality of soyfoods. The influence of radiation can be broken down into two components: (A) affect of surface pasteurization to ensure the astronauts safety from food-borne illnesses (a Hazard Analysis Critical Control Point), and (B) affect of the amount of radiation the soybeans receive during a Mars mission. Decreases in the amount of natural antioxidants and free radical formation and oxidation induced changes in the soybean (lipid, protein, etc.) will influence the nutritional value, texture, quality, and safety of soyfoods made from them. The objectives of this project are to (1) evaluate the influence of gamma and electron beam radiation on bulk soybeans (HACCP, CCP) on the microbial load, germination, ease of processing, and quality of soymilk and tofu; (2) provide scale up and mass balance data for Advanced Life Support subsystems including Biomass, Solid Waste Processing, and Water Recovery Systems; and (3) to compare Hoyt field grown to hydroponically grown Hoyt soybeans for soymilk and tofu production. The soybean cultivar Hoyt, a small standing, high protein cultivar that could grow hydroponically in the AIMS facility on Mars) was evaluated for the production of soymilk and tofu. The quality and yield of the soymilk and tofu from hydroponic Hoyt, was compared to Vinton 81 (a soyfood industry standard), field Hoyt, IA 2032LS (lipoxygenase-free), and Proto (high protein and antioxidant potential). Soymilk and tofu were produced using the Japanese

Looking for a bulk point

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maldacena, Juan; Simmons-Duffin, David; Zhiboedov, Alexander

Here, we consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We also argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at thesemore » locations. Finally, we prove this statement in 1+1 dimensions by CFT methods.« less

Looking for a bulk point

DOE PAGES

Maldacena, Juan; Simmons-Duffin, David; Zhiboedov, Alexander

2017-01-03

Here, we consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We also argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at thesemore » locations. Finally, we prove this statement in 1+1 dimensions by CFT methods.« less

Extended hot carrier lifetimes observed in bulk In{sub 0.265±0.02}Ga{sub 0.735}N under high-density photoexcitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yi; Tayebjee, Murad J. Y.; Smyth, Suntrana

2016-03-28

We have investigated the ultrafast carrier dynamics in a 1 μm bulk In{sub 0.265}Ga{sub 0.735}N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 10{sup 16 }cm{sup −3}. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 10{sup 18 }cm{sup −3}. Thismore » is the longest carrier thermalization time observed in bulk InGaN alloys to date.« less

Irrigation frequency alters nutrient uptake in container-grown Rhododendron plants grown with different rates of nitrogen

USDA-ARS?s Scientific Manuscript database

The influence of irrigation frequency (same amount of water per day given at different times) on nutrient uptake of container-grown evergreen Rhododendron ‘P.J.M. Compact’ (PJM) and ‘English Roseum’ (ER) and deciduous Rhododendron ‘Gibraltar’ (AZ) grown with different rates of nitrogen (N) fertilize...

A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions.

PubMed

Zhu, Chunhui; Wang, Fengqiu; Meng, Yafei; Yuan, Xiang; Xiu, Faxian; Luo, Hongyu; Wang, Yazhou; Li, Jianfeng; Lv, Xinjie; He, Liang; Xu, Yongbing; Liu, Junfeng; Zhang, Chao; Shi, Yi; Zhang, Rong; Zhu, Shining

2017-01-20

Pulsed lasers operating in the mid-infrared (3-20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd 3 As 2 , a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd 3 As 2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

NASA Astrophysics Data System (ADS)

Zhu, Chunhui; Wang, Fengqiu; Meng, Yafei; Yuan, Xiang; Xiu, Faxian; Luo, Hongyu; Wang, Yazhou; Li, Jianfeng; Lv, Xinjie; He, Liang; Xu, Yongbing; Liu, Junfeng; Zhang, Chao; Shi, Yi; Zhang, Rong; Zhu, Shining

2017-01-01

Pulsed lasers operating in the mid-infrared (3-20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd3As2, a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd3As2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

Magnetization behavior of RE123 bulk magnets bearing twin seed-crystals in pulsed field magnetization processes

NASA Astrophysics Data System (ADS)

Oka, T.; Miyazaki, T.; Ogawa, J.; Fukui, S.; Sato, T.; Yokoyama, K.; Langer, M.

2016-02-01

Melt-textured Y-Ba-Cu-O high temperature superconducting bulk magnets were fabricated by the cold seeding method with using single or twin-seed crystals composed of Nd-Ba-Cu-O thin films on MgO substrates. The behavior of the magnetic flux penetration into anisotropic-grown bulk magnets thus fabricated was precisely evaluated during and after the pulsed field magnetization operated at 35 K. These seed crystals were put on the top surfaces of the precursors to grow large grains during the melt-processes. Although we know the magnetic flux motion is restricted by the enhanced pinning effect in temperature ranges lower than 77 K, we observed that flux invasion occurred at applied fields of 3.3 T when the twin seeds were used. This is definitely lower than those of 3.7 T when the single-seeds were employed. This means that the magnetic fluxes are capable of invading into twin-seeded bulk magnets more easily than single-seeded ones. The twin seeds form the different grain growth regions, the narrow-GSR (growth sector region) and wide-GSR, according to the different grain growth directions which are parallel and normal to the rows of seed crystals, respectively. The invading flux measurements revealed that the magnetic flux invades the sample from the wide-GSR prior to the narrow-GSR. It suggests that such anisotropic grain growth leads to different distributions of pinning centers, variations of J c values, and the formation of preferential paths for the invading magnetic fluxes. Using lower applied fields definitely contributed to lowering the heat generation during the PFM process, which, in turn, led to enhanced trapped magnetic fluxes.

20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications

NASA Astrophysics Data System (ADS)

Ajayan, J.; Nirmal, D.

2017-03-01

In this article, the DC and RF performance of a SiN passivated 20-nm gate length metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped InGaAs source/drain (S/D) regions have investigated using the Synopsys TCAD tool. The 20-nm enhancement-mode (E-mode) MHEMT device also features δ-doped sheets on either side of the In0.53Ga0.47As/InAs/In0.53Ga0.47As channel which exhibits a transconductance of 3100 mS/mm, cut-off frequency (fT) of 740 GHz and a maximum oscillation frequency (fmax) of 1040 GHz. The threshold voltage of the device is found to be 0.07 V. The room temperature Hall mobilities of the 2-dimensional sheet charge density are measured to be over 12,600 cm2/Vs with a sheet charge density larger than 3.6 × 1012 cm-2. These high-performance E-mode MHEMTs are attractive candidates for sub-millimetre wave applications such as high-resolution radars for space research, remote atmospheric sensing, imaging systems and also for low noise wide bandwidth amplifier for future communication systems.

Faecal bulking efficacy of Australasian breakfast cereals.

PubMed

Monro, John A

2002-01-01

Faecal bulk may play an important role in preventing a range of disorders of the large bowel, but as yet there is little information available on the relative faecal bulking capacities of various foods. Breakfast cereals are often promoted as a good source of potential bulk for 'inner health' because they provide dietary fibre, but their relative abilities to provide faecal bulk per se have not been described. The faecal bulking efficacy of 28 representative Australasian breakfast cereals was therefore measured. A rat model developed for the purpose, and shown to give similar responses as humans to cereal fibres, was used to measure faecal bulking efficacy as increases in fully hydrated faecal weight/100 g diet, based on precise measurements of food intake, faecal dry matter output and faecal water-holding capacity (g water held without stress/g faecal dry matter). Compared to a baseline diet containing 50% sucrose, increments in hydrated faecal weight due to 50% breakfast cereal ranged from slightly negative (Cornflakes, -2 g/100 g diet) to about 80 g/100 g diet (San Bran). Most breakfast cereals increased hydrated faecal weight by between 10 and 20 g/100 g diet from a baseline of 21 +/- 1.5 g/100 g diet, but four products containing high levels of wheat bran had an exceptionally large impact on hydrated faecal weight (increment > 20 g/100 g diet), and the changes resulted more from relative changes in dry matter output than in faecal water retention/gram. However, as faecal water retention was about 2.5 g water/g faecal dry matter on average, increases in dry matter represented large increases in faecal water load. Faecal bulking indices (FBI) for most of the breakfast cereals were less than 20 (wheat bran = 100). The content of wheat bran equivalents for faecal bulk (WBE(fb)) in the breakfast cereals was calculated from FBI. Most breakfast cereals contributed, per serve, less than 10% of a theoretical daily reference value for faecal bulk (DRV(fb) = 63 WBE

33 CFR 127.313 - Bulk storage.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Bulk storage. 127.313 Section 127.313 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...

33 CFR 127.313 - Bulk storage.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Bulk storage. 127.313 Section 127.313 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...

33 CFR 127.313 - Bulk storage.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Bulk storage. 127.313 Section 127.313 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...

33 CFR 127.313 - Bulk storage.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Bulk storage. 127.313 Section 127.313 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...

33 CFR 127.313 - Bulk storage.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Bulk storage. 127.313 Section 127.313 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...

Phototransistors Development and their Applications to Lidar

NASA Technical Reports Server (NTRS)

Abedin, M. N.; Refaat, Tamer F.; Ismail, Syed; Singh, Upendra N.

2007-01-01

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

Bulk viscosity of molecular fluids

NASA Astrophysics Data System (ADS)

Jaeger, Frederike; Matar, Omar K.; Müller, Erich A.

2018-05-01

The bulk viscosity of molecular models of gases and liquids is determined by molecular simulations as a combination of a dilute gas contribution, arising due to the relaxation of internal degrees of freedom, and a configurational contribution, due to the presence of intermolecular interactions. The dilute gas contribution is evaluated using experimental data for the relaxation times of vibrational and rotational degrees of freedom. The configurational part is calculated using Green-Kubo relations for the fluctuations of the pressure tensor obtained from equilibrium microcanonical molecular dynamics simulations. As a benchmark, the Lennard-Jones fluid is studied. Both atomistic and coarse-grained force fields for water, CO2, and n-decane are considered and tested for their accuracy, and where possible, compared to experimental data. The dilute gas contribution to the bulk viscosity is seen to be significant only in the cases when intramolecular relaxation times are in the μs range, and for low vibrational wave numbers (<1000 cm-1); This explains the abnormally high values of bulk viscosity reported for CO2. In all other cases studied, the dilute gas contribution is negligible and the configurational contribution dominates the overall behavior. In particular, the configurational term is responsible for the enhancement of the bulk viscosity near the critical point.

Photodetector with absorbing region having resonant periodic absorption between reflectors

DOEpatents

Bryan, R.P.; Olbright, G.R.; Brennan, T.M.; Tsao, J.Y.

1995-02-14

A photodetector is disclosed that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer. 11 figs.

Photodetector with absorbing region having resonant periodic absorption between reflectors

DOEpatents

Bryan, Robert P.; Olbright, Gregory R.; Brennan, Thomas M.; Tsao, Jeffrey Y.

1995-02-14

A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.

Gravitational potential wells and the cosmic bulk flow

NASA Astrophysics Data System (ADS)

Wang, Yuyu; Kumar, Abhinav; Feldman, Hume; Watkins, Richard

2016-03-01

The bulk flow is a volume average of the peculiar velocities and a useful probe of the mass distribution on large scales. The gravitational instability model views the bulk flow as a potential flow that obeys a Maxwellian Distribution. We use two N-body simulations, the LasDamas Carmen and the Horizon Run, to calculate the bulk flows of various sized volumes in the simulation boxes. Once we have the bulk flow velocities as a function of scale, we investigate the mass and gravitational potential distribution around the volume. We found that matter densities can be asymmetrical and difficult to detect in real surveys, however, the gravitational potential and its gradient may provide better tools to investigate the underlying matter distribution. This study shows that bulk flows are indeed potential flows and thus provides information on the flow sources. We also show that bulk flow magnitudes follow a Maxwellian distribution on scales > 10h-1 Mpc.

Unified bulk-boundary correspondence for band insulators

NASA Astrophysics Data System (ADS)

Rhim, Jun-Won; Bardarson, Jens H.; Slager, Robert-Jan

2018-03-01

The bulk-boundary correspondence, a topic of intensive research interest over the past decades, is one of the quintessential ideas in the physics of topological quantum matter. Nevertheless, it has not been proven in all generality and has in certain scenarios even been shown to fail, depending on the boundary profiles of the terminated system. Here, we introduce bulk numbers that capture the exact number of in-gap modes, without any such subtleties in one spatial dimension. Similarly, based on these 1D bulk numbers, we define a new 2D winding number, which we call the pole winding number, that specifies the number of robust metallic surface bands in the gap as well as their topological character. The underlying general methodology relies on a simple continuous extrapolation from the bulk to the boundary, while tracking the evolution of Green's function's poles in the vicinity of the bulk band edges. As a main result we find that all the obtained numbers can be applied to the known insulating phases in a unified manner regardless of the specific symmetries. Additionally, from a computational point of view, these numbers can be effectively evaluated without any gauge fixing problems. In particular, we directly apply our bulk-boundary correspondence construction to various systems, including 1D examples without a traditional bulk-boundary correspondence, and predict the existence of boundary modes on various experimentally studied graphene edges, such as open boundaries and grain boundaries. Finally, we sketch the 3D generalization of the pole winding number by in the context of topological insulators.

46 CFR 148.04-23 - Unslaked lime in bulk.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 5 2010-10-01 2010-10-01 false Unslaked lime in bulk. 148.04-23 Section 148.04-23... HAZARDOUS MATERIALS IN BULK Special Additional Requirements for Certain Material § 148.04-23 Unslaked lime in bulk. (a) Unslaked lime in bulk must be transported in unmanned, all steel, double-hulled barges...

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Imura, Masataka; Tsuda, Shunsuke; Takeda, Hiroyuki; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

2018-03-01

The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3N:Mg, respectively) epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. Here three samples with different Mg concentrations ([Mg] = 0, 7 × 1019, and 4 × 1020 cm-3) are chosen for comparison. It is found that a large downward energy band bending exists in all samples due to the formation of a surface electron accumulation (SEA) layer. For u-In0.7Ga0.3N epilayer, band bending as large as 0.8 ± 0.05 eV occurs from bulk to surface. Judged from the valence band spectral edge and numerical analysis of energy band with a surface quantum well, the valence band maximum (VBM) with respect to Fermi energy (EF) level in the bulk is determined to be 1.22 ± 0.05 eV. In contrast, for In0.7Ga0.3N:Mg epilayers, the band bending increases and the VBM only in the bulk tends to shift toward the EF level owing to the Mg acceptor doping. Hence, the energy band is considered to exhibit a downward bending structure due to the coexistence of the n+ SEA layer and Mg-doped p layer formed in the bulk. When [Mg] changes from 7 × 1019 to 4 × 1020 cm-3, the peak split occurs in HX-PES spectra under the bulk sensitive condition. This result indicates that the energy band forms an anomalous downward bending structure with a singular point due to the generation of a thin depleted region at the n+ p interface. For In0.7Ga0.3N:Mg epilayers, the VBM in the bulk is assumed to be slightly lower than EF level within 0.1 eV.

Temporal soil bulk density following tillage

USDA-ARS?s Scientific Manuscript database

Soil is the medium for air, energy, water, and chemical transport between the atmosphere and the solid earth. Soil bulk density is a key variable impacting the rate at which this transport occurs. Typically, soil bulk density is measured by the gravimetric method, where a sample of known volume is t...

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses andmore » compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.« less

Bulk solitary waves in elastic solids

NASA Astrophysics Data System (ADS)

Samsonov, A. M.; Dreiden, G. V.; Semenova, I. V.; Shvartz, A. G.

2015-10-01

A short and object oriented conspectus of bulk solitary wave theory, numerical simulations and real experiments in condensed matter is given. Upon a brief description of the soliton history and development we focus on bulk solitary waves of strain, also known as waves of density and, sometimes, as elastic and/or acoustic solitons. We consider the problem of nonlinear bulk wave generation and detection in basic structural elements, rods, plates and shells, that are exhaustively studied and widely used in physics and engineering. However, it is mostly valid for linear elasticity, whereas dynamic nonlinear theory of these elements is still far from being completed. In order to show how the nonlinear waves can be used in various applications, we studied the solitary elastic wave propagation along lengthy wave guides, and remarkably small attenuation of elastic solitons was proven in physical experiments. Both theory and generation for strain soliton in a shell, however, remained unsolved problems until recently, and we consider in more details the nonlinear bulk wave propagation in a shell. We studied an axially symmetric deformation of an infinite nonlinearly elastic cylindrical shell without torsion. The problem for bulk longitudinal waves is shown to be reducible to the one equation, if a relation between transversal displacement and the longitudinal strain is found. It is found that both the 1+1D and even the 1+2D problems for long travelling waves in nonlinear solids can be reduced to the Weierstrass equation for elliptic functions, which provide the solitary wave solutions as appropriate limits. We show that the accuracy in the boundary conditions on free lateral surfaces is of crucial importance for solution, derive the only equation for longitudinal nonlinear strain wave and show, that the equation has, amongst others, a bidirectional solitary wave solution, which lead us to successful physical experiments. We observed first the compression solitary wave in the

Spatial Distribution of Photosynthesis during Drought in Field-Grown and Acclimated and Nonacclimated Growth Chamber-Grown Cotton 1

PubMed Central

Wise, Robert R.; Ortiz-Lopez, Adriana; Ort, Donald R.

1992-01-01

Inhomogeneous photosynthetic activity has been reported to occur in drought-stressed leaves. In addition, it has been suggested that these water stress-induced nonuniformities in photosynthesis are caused by “patchy” stomatal closure and that the phenomenon may have created the illusion of a nonstomatal component to the inhibition of photosynthesis. Because these earlier studies were performed with nonacclimated growth chamber-grown plants, we sought to determine whether such “patches” existed in drought-treated, field-grown plants or in chamber-grown plants that had been acclimated to low leaf water potentials (ψleaf). Cotton (Gossypium hirsutum L.) was grown in the field and subjected to drought by withholding irrigation and rain from 24 d after planting. The distribution of photosynthesis, which may reflect the stomatal aperture distribution in a heterobaric species such as cotton, was assayed by autoradiography after briefly exposing attached leaves of field-grown plants to 14CO2. A homogeneous distribution of radioactive photosynthate was evident even at the lowest ψleaf of −1.34 MPa. “Patchiness” could, however, be induced by uprooting the plant and allowing the shoot to air dry for 6 to 8 min. In parallel studies, growth chamber-grown plants were acclimated to drought by withholding irrigation for three 5-d drought cycles interspersed with irrigation. This drought acclimation lowered the ψleaf value at which control rates of photosynthesis could be sustained by approximately 0.7 MPa and was accompanied by a similar decline in the ψleaf at which patchiness first appeared. Photosynthetic inhomogeneities in chamber-grown plants that were visible during moderate water stress and ambient levels of CO2 could be largely removed with elevated CO2 levels (3000 μL L−1), suggesting that they were stomatal in nature. However, advanced dehydration (less than approximately 2.0 MPa) resulted in “patches” that could not be so removed and were

27 CFR 20.191 - Bulk articles.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

27 CFR 20.191 - Bulk articles.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

27 CFR 20.191 - Bulk articles.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

27 CFR 20.191 - Bulk articles.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

27 CFR 20.191 - Bulk articles.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

Technical issues of a high-Tc superconducting bulk magnet

NASA Astrophysics Data System (ADS)

Fujimoto, Hiroyuki

2000-06-01

Superconducting magnets made of high-Tc superconductors are promising for industrial applications. It is well known that REBa2Cu3O7-x superconductors prepared by melt processes have a high critical current density, Jc, at 77 K and high magnetic fields. The materials are very promising for high magnetic field applications as a superconducting permanent/bulk magnet with liquid-nitrogen refrigeration. Light rare-earth (LRE) BaCuO bulks, compared with REBaCuO bulks, exhibit a larger Jc in high magnetic fields and a much improved irreversibility field, Hirr, at 77 K. In this study, we discuss technical issues of a high-Tc superconducting bulk magnet, namely the aspects of the melt processing for bulk superconductors, their characteristic superconducting properties and mechanical properties, and trapped field properties of a superconducting bulk magnet. One of the possible applications is a superconducting bulk magnet for the magnetically levitated (Maglev) train in the future.

AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

NASA Technical Reports Server (NTRS)

Yngvesson, K. S.; Yang, J.-X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K. M.

1992-01-01

The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Efficiency of bulk-heterojunction organic solar cells

PubMed Central

Scharber, M.C.; Sariciftci, N.S.

2013-01-01

During the last years the performance of bulk heterojunction solar cells has been improved significantly. For a large-scale application of this technology further improvements are required. This article reviews the basic working principles and the state of the art device design of bulk heterojunction solar cells. The importance of high power conversion efficiencies for the commercial exploitation is outlined and different efficiency models for bulk heterojunction solar cells are discussed. Assuming state of the art materials and device architectures several models predict power conversion efficiencies in the range of 10–15%. A more general approach assuming device operation close to the Shockley–Queisser-limit leads to even higher efficiencies. Bulk heterojunction devices exhibiting only radiative recombination of charge carriers could be as efficient as ideal inorganic photovoltaic devices. PMID:24302787

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

Large area planar stanene epitaxially grown on Ag(1 1 1)

NASA Astrophysics Data System (ADS)

Yuhara, Junji; Fujii, Yuya; Nishino, Kazuki; Isobe, Naoki; Nakatake, Masashi; Xian, Lede; Rubio, Angel; Le Lay, Guy

2018-04-01

Artificial post-graphene elemental 2D materials have received much attention recently. Especially, stanene, the tin analogue of graphene, is expected to be a robust 2D topological insulator, even above room temperature. We have grown epitaxial 2D stanene on a Ag(1 1 1) single crystal template and determined its crystalline structure synergetically by scanning tunneling microscopy, high-resolution synchrotron radiation photoemission spectroscopy, and advanced first principles calculations. From the STM images, we show that stanene forms a nearly planar structure in large domains. A detailed core-level spectroscopy analysis as well as DFT calculations reveal that the stanene sheet lays over an ordered 2D Ag2Sn surface alloy, but not directly on a bulk-terminated Ag(1 1 1) surface. The electronic structure exhibits a characteristic 2D band with parabolic dispersion due to the non-negligible interaction with the underlying surface alloy.

Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Orozco, S.; Riascos, H.; Duque, S.

2016-02-01

ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

Container-Grown Longleaf Pine Seedling Quality

Treesearch

Mark J. Hainds; James P. Barnett

2004-01-01

This study examines the comparative hardiness of various classes or grades of container-grown longleaf pine (Pinus palustris Mill.) seedlings. Most container longleaf seedlings are grown in small ribbed containers averaging 5 to 7 cubic inches in volume and 3 to 6 inches in depth. Great variability is often exhibited in typical lots of container-...

Preliminary study of superconducting bulk magnets for Maglev

NASA Astrophysics Data System (ADS)

Fujimoto, Hiroyuki; Kamijo, Hiroki

Recent development shows that melt-processed YBaCuO (Y123) or Rare Earth (RE)123 superconductors have a high Jc at 77 K and high magnetic field, leading to high field application as a superconducting quasi-permanent bulk magnet with the liquid nitrogen refrigeration. One of the promising applications is a superconducting magnet for the magnetically levitated (Maglev) train. We discuss a superconducting bulk magnet for the Maglev train in the aspect of a preliminary design of the bulk magnet and also processing for (L)REBaCuO bulk superconductors and their characteristic superconducting properties.

30 CFR 56.6802 - Bulk delivery vehicles.

Code of Federal Regulations, 2010 CFR

2010-07-01

... § 56.6802 Bulk delivery vehicles. No welding or cutting shall be performed on a bulk delivery vehicle... cutting on a hollow shaft, the shaft shall be thoroughly cleaned inside and out and vented with a minimum...

Ultra-low noise large-area InGaAs quad photoreceiver with low crosstalk for laser interferometry space antenna

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish; Rue, Jim; Livas, Jeffrey; Silverberg, Robert; Guzman Cervantes, Felipe

2012-07-01

Quad photoreceivers, namely a 2 x 2 array of p-i-n photodiodes followed by a transimpedance amplifier (TIA) per diode, are required as the front-end photonic sensors in several applications relying on free-space propagation with position and direction sensing capability, such as long baseline interferometry, free-space optical communication, and biomedical imaging. It is desirable to increase the active area of quad photoreceivers (and photodiodes) to enhance the link gain, and therefore sensitivity, of the system. However, the resulting increase in the photodiode capacitance reduces the photoreceiver's bandwidth and adds to the excess system noise. As a result, the noise performance of the front-end quad photoreceiver has a direct impact on the sensitivity of the overall system. One such particularly challenging application is the space-based detection of gravitational waves by measuring distance at 1064 nm wavelength with ~ 10 pm/√Hz accuracy over a baseline of millions of kilometers. We present a 1 mm diameter quad photoreceiver having an equivalent input current noise density of < 1.7 pA/√Hz per quadrant in 2 MHz to 20 MHz frequency range. This performance is primarily enabled by a rad-hard-by-design dualdepletion region InGaAs quad photodiode having 2.5 pF capacitance per quadrant. Moreover, the quad photoreceiver demonstrates a crosstalk of < -45 dB between the neighboring quadrants, which ensures an uncorrected direction sensing resolution of < 50 nrad. The sources of this primarily capacitive crosstalk are presented.

Large-scale HTS bulks for magnetic application

NASA Astrophysics Data System (ADS)

Werfel, Frank N.; Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter

2013-01-01

ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN2 and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500-3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN2 allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.

Bulk density of small meteoroids

NASA Astrophysics Data System (ADS)

Kikwaya, J.-B.; Campbell-Brown, M.; Brown, P. G.

2011-06-01

Aims: Here we report on precise metric and photometric observations of 107 optical meteors, which were simultaneously recorded at multiple stations using three different intensified video camera systems. The purpose is to estimate bulk meteoroid density, link small meteoroids to their parent bodies based on dynamical and physical density values expected for different small body populations, to better understand and explain the dynamical evolution of meteoroids after release from their parent bodies. Methods: The video systems used had image sizes ranging from 640 × 480 to 1360 × 1036 pixels, with pixel scales from 0.01° per pixel to 0.05° per pixel, and limiting meteor magnitudes ranging from Mv = +2.5 to +6.0. We find that 78% of our sample show noticeable deceleration, allowing more robust constraints to be placed on density estimates. The density of each meteoroid is estimated by simultaneously fitting the observed deceleration and lightcurve using a model based on thermal fragmentation, conservation of energy and momentum. The entire phase space of the model free parameters is explored for each event to find ranges of parameters which fit the observations within the measurement uncertainty. Results: (a) We have analysed our data by first associating each of our events with one of the five meteoroid classes. The average density of meteoroids whose orbits are asteroidal and chondritic (AC) is 4200 kg m-3 suggesting an asteroidal parentage, possibly related to the high-iron content population. Meteoroids with orbits belonging to Jupiter family comets (JFCs) have an average density of 3100 ± 300 kg m-3. This high density is found for all meteoroids with JFC-like orbits and supports the notion that the refractory material reported from the Stardust measurements of 81P/Wild 2 dust is common among the broader JFC population. This high density is also the average bulk density for the 4 meteoroids with orbits belonging to the Ecliptic shower-type class (ES) also

Compound-Specific δ¹⁵N and δ¹³C Analyses of Amino Acids for Potential Discrimination between Organically and Conventionally Grown Wheat.

PubMed

Paolini, Mauro; Ziller, Luca; Laursen, Kristian Holst; Husted, Søren; Camin, Federica

2015-07-01

We present a study deploying compound-specific nitrogen and carbon isotope analysis of amino acids to discriminate between organically and conventionally grown plants. We focused on grain samples of common wheat and durum wheat grown using synthetic nitrogen fertilizers, animal manures, or green manures from nitrogen-fixing legumes. The measurement of amino acid δ(15)N and δ(13)C values, after protein hydrolysis and derivatization, was carried out using gas chromatography-combustion-isotope ratio mass spectrometry (GC-C-IRMS). Our results demonstrated that δ(13)C of glutamic acid and glutamine in particular, but also the combination of δ(15)N and δ(13)C of 10 amino acids, can improve the discrimination between conventional and organic wheat compared to stable isotope bulk tissue analysis. We concluded that compound-specific stable isotope analysis of amino acids represents a novel analytical tool with the potential to support and improve the certification and control procedures in the organic sector.

Irradiating of Bulk Soybeans: Influence on Their Functional and Sensory Properties for Soyfood Processing

NASA Technical Reports Server (NTRS)

Chia, Chiew-Ling; Wilson, Lester A.; Boylston, Terri; Perchonok, Michele; French, Stephen

2006-01-01

Soybeans were chosen for lunar and planetary missions, where soybeans will be supplied in bulk or grown locally, due to their nutritive value and ability to produce oil and protein for further food applications. However, soybeans must be processed into foods prior to consumption. Radiation that soybeans would be exposed to during bulk storage prior to and during a Mars mission may influence their germination and functional properties. The influence of radiation includes the affect of surface pasteurization to ensure the astronauts safety from food-borne illnesses (HACCP, CCP), and the affect of the amount of radiation the soybeans receive during a Mars mission. Decreases in the amount of natural antioxidants free radical formation, and oxidation-induced changes in the soybean will influence the nutritional value, texture, color, and aroma of soyfoods. The objective of this study was to determine the influence of pasteurization and sterilization surface radiation on whole soybeans using gamma and electron beam radiation. The influence of 0, 1, 5, 10, and 30kGy on microbial load, germination rate, ease of processing, and quality of soymilk and tofu were determined. Surface radiation of whole dry soybeans using electron beam or gamma rays from 1-30kGy did provide microbial safety for the astronauts. However, the lower dose levels had surviving yeasts and molds. These doses caused oxidative changes that resulted in soymilk and tofu with rancid aromas. GC-MS of the aroma compounds using SPME Headspace confirmed the presence of lipid oxidation compounds. Soybean germination ability was reduced as radiation dosage increased. While lower doses may reduce these problems, the ability to insure microbial safety of bulk soybeans will be lost. Counter measures could include vacuum packaging, nitrogen flushing, added antioxidants, and radiating under freezing conditions. Doses below 1kGy need to be investigated further to determine the influence of the radiation encountered

Ultraviolet photoelectron spectroscopy reveals energy-band dispersion for π-stacked 7,8,15,16-tetraazaterrylene thin films in a donor-acceptor bulk heterojunction.

PubMed

Aghdassi, Nabi; Wang, Qi; Ji, Ru-Ru; Wang, Bin; Fan, Jian; Duhm, Steffen

2018-05-11

7,8,15,16-tetraazaterrylene (TAT) thin films grown on highly oriented pyrolytic graphite (HOPG) substrates were studied extensively with regard to their intrinsic and interfacial electronic properties by means of ultraviolet photoelectron spectroscopy (UPS). Merely weak substrate-adsorbate interaction occurs at the TAT/HOPG interface, with interface energetics being only little affected by the nominal film thickness. Photon energy-dependent UPS performed perpendicular to the molecular planes of TAT multilayer films at room temperature clearly reveals band-like intermolecular dispersion of the TAT highest occupied molecular orbital (HOMO) energy. Based on a comparison with a tight-binding model, a relatively narrow bandwidth of 54 meV is derived, which points to the presence of an intermediate regime between hopping and band-like hole transport. Upon additional deposition of 2,2':5',2″:5″,2″'-quaterthiophene (4T), a 4T:TAT donor-acceptor bulk heterojunction with a considerable HOMO-level offset at the donor-acceptor interface is formed. The 4T:TAT bulk heterojunction likewise exhibits intermolecular dispersion of the TAT HOMO energy, yet with a significant decreased bandwidth.

Bulk Crystal Growth of Piezoelectric PMN-PT Crystals Using Gradient Freeze Technique for Improved SHM Sensors

NASA Technical Reports Server (NTRS)

Aggarwal, Mohan D.; Kochary, F.; Penn, Benjamin G.; Miller, Jim

2007-01-01

There has been a growing interest in recent years in lead based perovskite ferroelectric and relaxor ferroelectric solid solutions because of their excellent dielectric, piezoelectric and electrostrictive properties that make them very attractive for various sensing, actuating and structural health monitoring (SHM) applications. We are interested in the development of highly sensitive and efficient PMN-PT sensors based on large single crystals for the structural health monitoring of composite materials that may be used in future spacecrafts. Highly sensitive sensors are needed for detection of defects in these materials because they often tend to fail by distributed and interacting damage modes and much of the damage occurs beneath the top surface of the laminate and not detectable by visual inspection. Research is being carried out for various combinations of solid solutions for PMN-PT piezoelectric materials and bigger size crystals are being sought for improved sensor applications. Single crystals of this material are of interest for sensor applications because of their high piezoelectric coefficient (d33 greater than 1700 pC/N) and electromechanical coefficients (k33 greater than 0.90). For comparison, the commonly used piezoelectric ceramic lead zirconate titanate (PZT) has a d33 of about 600 pC/N and electromechanical coefficients k33 of about 0.75. At the present time, these piezoelectric relaxor crystals are grown by high temperature flux growth method and the size of these crystals are rather small (3x4x5 mm(exp 3). In the present paper, we have attempted to grow bulk single crystals of PMN-PT in a 2 inch diameter platinum crucible and successfully grown a large size crystal of 67%PMN-33%PT using the vertical gradient freeze technique with no flux. Piezoelectric properties of the grown crystals are investigated. PMN-PT plates show excellent piezoelectric properties. Samples were poled under an applied electric field of 5 kV/cm. Dielectric properties at a

Meteoroid Bulk Density and Ceplecha Types

NASA Technical Reports Server (NTRS)

Blaauw, R. C.; Moser, D. E.; Moorhead, A. V.

2017-01-01

Determination of asteroid bulk density is an important aspect of NEO characterization, yet difficult to measure. As a fraction of meteoroids originate from asteroids (including some NEOs), a study of meteoroid bulk densities can potentially provide useful insights into the densities of NEOs and PHOs in lieu of mutual perturbations, satellite, or expensive spacecraft missions. NASA's Meteoroid Environment Office characterizes the meteoroid environment for the purpose of spacecraft risk and operations. To accurately determine the risk, a distribution of meteoroid bulk densities are needed. This is not trivial to determine. If the particle survives to the ground the bulk density can be directly measured, however only the most dense particles land on the Earth. The next best approach is to model the meteor's ablation, which is not straightforward. Clear deceleration is necessary to do this and there are discrepancies in results between models. One approach to a distribution of bulk density is to use a measured proxy for the densities, then calibrate the proxy with known densities from meteorite falls, ablation modelling, and other sources. An obvious proxy choice is the Ceplecha type, K(sub B), thought to indicate the strength of a meteoroid. KB is frequented cited as a good proxy for meteoroid densities, but we find it is poorly correlated with density. However, a distinct split by dynamical type was seen with Jovian Tisserand parameter, T(sub J), with meteoroids from Halley Type comets (T(sub J less than 2 ) exhibiting much lower densities than those originating from Jupiter and asteroids (T(sub J greater than 2).

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Bulk-edge correspondence in topological transport and pumping

NASA Astrophysics Data System (ADS)

Imura, Ken-Ichiro; Yoshimura, Yukinori; Fukui, Takahiro; Hatsugai, Yasuhiro

2018-03-01

The bulk-edge correspondence (BEC) refers to a one-to-one relation between the bulk and edge properties ubiquitous in topologically nontrivial systems. Depending on the setup, BEC manifests in different forms and govern the spectral and transport properties of topological insulators and semimetals. Although the topological pump is theoretically old, BEC in the pump has been established just recently [1] motivated by the state-of-the-art experiments using cold atoms [2, 3]. The center of mass (CM) of a system with boundaries shows a sequence of quantized jumps in the adiabatic limit associated with the edge states. Despite that the bulk is adiabatic, the edge is inevitably non-adiabatic in the experimental setup or in any numerical simulations. Still the pumped charge is quantized and carried by the bulk. Its quantization is guaranteed by a compensation between the bulk and edges. We show that in the presence of disorder the pumped charge continues to be quantized despite the appearance of non-quantized jumps.

29 CFR 794.131 - “Customer * * * engaged in bulk distribution”.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 3 2010-07-01 2010-07-01 false âCustomer * * * engaged in bulk distributionâ. 794.131... Sales Made to Other Bulk Distributors § 794.131 “Customer * * * engaged in bulk distribution”. A sale to a customer of an enterprise engaged in the wholesale or bulk distribution of petroleum products will...

Proposal of a Bulk HTSC Staggered Array Undulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kii, Toshiteru; Kinjo, Ryota; Bakr, Mahmoud A.

We proposed a new type of undulator based on bulk high-T{sub c} superconductors (HTSC) which consists of a single solenoid and a stacked array of bulk HTSC. The main advantage of this configuration is that a mechanical structure is not required to produce and control the undulator field. In order to perform a proof of principle experiment, we have developed a prototype of bulk HTSC staggered array undulator using 11 pairs of DyBaCuO bulk superconductors and a normal conducting solenoid. Experimental results obtained by using the prototype undulator and numerical results obtained by a loop current model based on themore » Bean mode for a type-II superconductor were compared.« less

Recent developments of film bulk acoustic resonators

NASA Astrophysics Data System (ADS)

Gao, Junning; Liu, Guorong; Li, Jie; Li, Guoqiang

2016-06-01

Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs are also promising sensors because of the high sensitivity and readily integration ability to miniaturize circuits. On the ground of summarizing FBAR’s application in wireless communication as filters and in sensors including electronic nose, bio field, and pressure sensing, this paper review the main challenges of each application faced. The number of filters installed in the mobile phone has being grown explosively, which leads to overcrowded bands and put harsh requirements on component size and power consumption control for each unit. Data flow and rate are becoming increasingly demanding as well. This paper discusses three promising technical strategies addressing these issues. Among which coupled resonator filter is given intense attention because it is able to vigorously reduce the filter size by stacking two or more resonators together, and it is a great technique to increase data flow and rate. Temperature compensation methods are discussed considering their vital influence on frequency stability. Finally, materials improvement and novel materials exploration for band width modulation, tunable band acquisition, and quality factor improvement are discussed. The authors appeal attention of the academic society to bring AlN epitaxial thin film into the FBAR fabrication and have proposed a configuration to implement this idea.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

δ18O of apatite phosphate in small pelagic fish: insights from wild-caught and tank-grown specimens

NASA Astrophysics Data System (ADS)

Lambert, T.; Javor, B.; Paytan, A.

2011-12-01

Oxygen isotope ratios of mineralized structures in fish reflect the temperature and isotopic composition of the water in which they grow. For bulk samples (e.g., whole scales, bones, and otoliths), understanding how this signal is integrated across time and space is critical, especially for organisms exposed to high variability in growth conditions. Here, we assess the response of fish scale δ18O (from apatite phosphate) to experimentally manipulated water conditions. Wild-caught sardines were grown at controlled temperatures (13°C, 17°C, and 21°C) for 11 months. Higher growth temperatures correlated to lower δ18O values, representing a combination of scale apatite deposited before and after the temperature manipulation. Models that account for both biomineral allometry and exposure to varying water properties (e.g., by overlaying migration routes, isoscapes, and temperature maps) have the potential to quantify the varying contributions of minerals grown under different conditions. We use this method to predict δ18O of apatite phosphate for small pelagic fish found in California coastal waters, then compare expected values to those obtained from collected samples. Since phosphate oxygen is relatively resistant to diagenesis, this modern calibration establishes a framework for paleo studies.

Microtensile bond strength of bulk-fill restorative composites to dentin.

PubMed

Mandava, Jyothi; Vegesna, Divya-Prasanna; Ravi, Ravichandra; Boddeda, Mohan-Rao; Uppalapati, Lakshman-Varma; Ghazanfaruddin, M D

2017-08-01

To facilitate the easier placement of direct resin composite in deeper cavities, bulk fill composites have been introduced. The Mechanical stability of fillings in stress bearing areas restored with bulk-fill resin composites is still open to question, since long term clinical studies are not available so far. Thus, the objective of the study was to evaluate and compare the microtensile bond strength of three bulk-fill restorative composites with a nanohybrid composite. Class I cavities were prepared on sixty extracted mandibular molars. Teeth were divided into 4 groups (n= 15 each) and in group I, the prepared cavities were restored with nanohybrid (Filtek Z250 XT) restorative composite in an incremental manner. In group II, III and IV, the bulk-fill composites (Filtek, Tetric EvoCeram, X-tra fil bulk-fill restoratives) were placed as a 4 mm single increment and light cured. The restored teeth were subjected to thermocycling and bond strength testing was done using instron testing machine. The mode of failure was assessed by scanning electron microscope (SEM). The bond strength values obtained in megapascals (MPa) were subjected to statistical analysis, using SPSS/PC version 20 software.One-way ANOVA was used for groupwise comparison of the bond strength. Tukey's Post Hoc test was used for pairwise comparisons among the groups. The highest mean bond strength was achieved with Filtek bulk-fill restorative showing statistically significant difference with Tetric EvoCeram bulk-fill ( p < 0.003) and X-tra fil bulk-fill ( p <0.001) composites. Adhesive failures are mostly observed with X-tra fil bulk fill composites, whereas mixed failures are more common with other bulk fill composites. Bulk-fill composites exhibited adequate bond strength to dentin and can be considered as restorative material of choice in posterior stress bearing areas. Key words: Bond strength, Bulk-fill restoratives, Configuration factor, Polymerization shrinkage.

Bulk Superconductors in Mobile Application

NASA Astrophysics Data System (ADS)

Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onbasli, M. C., E-mail: onbasli@mit.edu; Kim, D. H.; Ross, C. A.

2014-10-01

Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm{sup −3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup −4}. These high quality YIG thin films are useful in the investigation ofmore » the origins of novel magnetic phenomena and magnetization dynamics.« less

Imprinting bulk amorphous alloy at room temperature

DOE PAGES

Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; ...

2015-11-13

We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the abilitymore » of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.« less

High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seacrist, Michael

The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of highmore » quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template

17 CFR 5.23 - Notice of bulk transfers and bulk liquidations.

Code of Federal Regulations, 2014 CFR

2014-04-01

.... (a) Notice and disclosure to retail forex customers of a bulk transfer. (1) A retail foreign exchange... consent of its retail forex customer to the assignment of any position or transfer of any account of the retail forex customer to another retail foreign exchange dealer, futures commission merchant or...

17 CFR 5.23 - Notice of bulk transfers and bulk liquidations.

Code of Federal Regulations, 2013 CFR

2013-04-01

.... (a) Notice and disclosure to retail forex customers of a bulk transfer. (1) A retail foreign exchange... consent of its retail forex customer to the assignment of any position or transfer of any account of the retail forex customer to another retail foreign exchange dealer, futures commission merchant or...

17 CFR 5.23 - Notice of bulk transfers and bulk liquidations.

Code of Federal Regulations, 2012 CFR

2012-04-01

.... (a) Notice and disclosure to retail forex customers of a bulk transfer. (1) A retail foreign exchange... consent of its retail forex customer to the assignment of any position or transfer of any account of the retail forex customer to another retail foreign exchange dealer, futures commission merchant or...

Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths

NASA Astrophysics Data System (ADS)

Han, Yu; Li, Qiang; Zhu, Si; Ng, Kar Wei; Lau, Kei May

2017-11-01

We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate by aspect ratio trapping. Multi-InGaAs ridge quantum wells inside InP nanoridges are designed as active gain materials for emission in the 1500 nm band. The good crystalline quality and optical property of the InGaAs quantum wells are attested by transmission electron microscopy and microphotoluminescence measurements. After transfer of the InP/InGaAs nanoridges onto a SiO2/Si substrate, amplified Fabry-Perot resonant modes at room temperature and multi-mode lasing behavior in the 1400 nm band under continuous-wave optical pumping at 4.5 K are observed. This result thus marks an important step towards integrating InP/InGaAs nanolasers directly grown on microelectronic standard (001) Si substrates.

A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

PubMed Central

Zhu, Chunhui; Wang, Fengqiu; Meng, Yafei; Yuan, Xiang; Xiu, Faxian; Luo, Hongyu; Wang, Yazhou; Li, Jianfeng; Lv, Xinjie; He, Liang; Xu, Yongbing; Liu, Junfeng; Zhang, Chao; Shi, Yi; Zhang, Rong; Zhu, Shining

2017-01-01

Pulsed lasers operating in the mid-infrared (3–20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd3As2, a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd3As2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources. PMID:28106037

46 CFR 97.12-1 - Definition of a bulk solid cargo.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Definition of a bulk solid cargo. 97.12-1 Section 97.12... OPERATIONS Bulk Solid Cargoes § 97.12-1 Definition of a bulk solid cargo. (a) A bulk solid cargo— (1.... (b) Additional requirements for bulk solid materials needing special handling are contained in Part...

Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

NASA Astrophysics Data System (ADS)

Burnham, Shawn D.; Thomas, Edward W.; Doolittle, W. Alan

2006-12-01

A characterization technique is discussed that allows quantitative optimization of doping in epitaxially grown semiconductors. This technique uses relative changes in the host atom secondary ion (HASI) energy distribution from secondary ion mass spectroscopy (SIMS) to indicate relative changes in conductivity of the material. Since SIMS is a destructive process due to sputtering through a film, a depth profile of the energy distribution of sputtered HASIs in a matrix will contain information on the conductivity of the layers of the film as a function of depth. This process is demonstrated with Mg-doped GaN, with the Mg flux slowly increased through the film. Three distinct regions of conductivity were observed: one with Mg concentration high enough to cause compensation and thus high resistivity, a second with moderate Mg concentration and low resistivity, and a third with little to no Mg doping, causing high resistivity due to the lack of free carriers. During SIMS analysis of the first region, the energy distributions of sputtered Ga HASIs were fairly uniform and unchanging for a Mg flux above the saturation, or compensation, limit. For the second region, the Ga HASI energy distributions shifted and went through a region of inconsistent energy distributions for Mg flux slightly below the critical flux for saturation, or compensation. Finally, for the third region, the Ga HASI energy distributions then settled back into another fairly unchanging, uniform pattern. These three distinct regions were analyzed further through growth of Mg-doped step profiles and bulk growth of material at representative Mg fluxes. The materials grown at the two unchanging, uniform regions of the energy distributions yielded highly resistive material due to too high of Mg concentration and low to no Mg concentration, respectively. However, material grown in the transient energy distribution region with Mg concentration between that of the two highly resistive regions yielded low

A stereoscopic look into the bulk

DOE PAGES

Czech, Bartlomiej; Lamprou, Lampros; McCandlish, Samuel; ...

2016-07-26

Here, we present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the “OPE blocks,” contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimalmore » surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space — the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow for conceptually clean and technically simple derivations of many results known in the literature, including linearized Einstein’s equations and the relation between conformal blocks and geodesic Witten diagrams.« less

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

Holographic bulk reconstruction with α' corrections

NASA Astrophysics Data System (ADS)

Roy, Shubho R.; Sarkar, Debajyoti

2017-10-01

We outline a holographic recipe to reconstruct α' corrections to anti-de Sitter (AdS) (quantum) gravity from an underlying CFT in the strictly planar limit (N →∞ ). Assuming that the boundary CFT can be solved in principle to all orders of the 't Hooft coupling λ , for scalar primary operators, the λ-1 expansion of the conformal dimensions can be mapped to higher curvature corrections of the dual bulk scalar field action. Furthermore, for the metric perturbations in the bulk, the AdS /CFT operator-field isomorphism forces these corrections to be of the Lovelock type. We demonstrate this by reconstructing the coefficient of the leading Lovelock correction, also known as the Gauss-Bonnet term in a bulk AdS gravity action using the expression of stress-tensor two-point function up to subleading order in λ-1.

A Compact Bulk Acousto-Optic Time Integrating Correlator.

DTIC Science & Technology

1984-11-01

AD-A156 668 A COMPACT BULK ACOUSTO - OPTIC TIME INTEGRATING 1/1 CORRELATOR(U) ELECTRONICS RESEARCH LAB ADELAIDE (AUSTRALIA) D A FOGG NOV 84 ERL-9323-TR...DEFENCE RESEARCH CENTRE SALISBURY SOUTH AUSTRALIA TECHNICAL REPORT ER L-0323-TR A COMPACT BULK ACOUSTO - OPTIC TIME INTEGRATING CORRELATOR D.A.B. FOGG...LABORATORY TECHNICAL REPORT ERL-0323-TR A COMPACT BULK ACOUSTO - OPTIC TIME INTEGRATING CORRELATOR D.A.B. Fogg SUMMARY This report describes the design and

19 CFR 151.24 - Unlading facilities for bulk sugar.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 19 Customs Duties 2 2014-04-01 2014-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

19 CFR 151.24 - Unlading facilities for bulk sugar.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 19 Customs Duties 2 2012-04-01 2012-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

19 CFR 151.24 - Unlading facilities for bulk sugar.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 19 Customs Duties 2 2013-04-01 2013-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

19 CFR 151.24 - Unlading facilities for bulk sugar.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

19 CFR 151.24 - Unlading facilities for bulk sugar.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 19 Customs Duties 2 2011-04-01 2011-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovalskiy, V. A., E-mail: kovalva@iptm.ru; Vergeles, P. S.; Eremenko, V. G.

2014-12-08

An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the (111) slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at themore » buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.« less

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Use of containers to carry bulk and break bulk commodities and its impact on gulf region ports and international trade.

DOT National Transportation Integrated Search

2014-08-01

The University of New Orleans Transportation Institute was tasked by the Louisiana Transportation Research Center (LTRC) in mid-2012 to assess the use of containers to transport bulk and break bulk commodities and to determine what their impact would...

Economic manufacturing of bulk metallic glass compositions by microalloying

DOEpatents

Liu, Chain T.

2003-05-13

A method of making a bulk metallic glass composition includes the steps of:a. providing a starting material suitable for making a bulk metallic glass composition, for example, BAM-11; b. adding at least one impurity-mitigating dopant, for example, Pb, Si, B, Sn, P, to the starting material to form a doped starting material; and c. converting the doped starting material to a bulk metallic glass composition so that the impurity-mitigating dopant reacts with impurities in the starting material to neutralize deleterious effects of the impurities on the formation of the bulk metallic glass composition.

Piezoelectric coefficients of bulk 3R transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Konabe, Satoru; Yamamoto, Takahiro

2017-09-01

The piezoelectric properties of bulk transition metal dichalcogenides (TMDCs) with a 3R structure were investigated using first-principles calculations based on density functional theory combined with the Berry phase treatment. Values for the elastic constant Cijkl , the piezoelectric coefficient eijk , and the piezoelectric coefficient dijk are given for bulk 3R-TMDCs (MoS2, MoSe2, WS2, and WSe2). The piezoelectric coefficients of bulk 3R-TMDCs are shown to be sufficiently large or comparable to those of conventional bulk piezoelectric materials such as α-quartz, wurtzite GaN, and wurtzite AlN.

On the Chemistry and Physical Properties of Flux and Floating Zone Grown SmB6 Single Crystals

PubMed Central

Phelan, W. A.; Koohpayeh, S. M.; Cottingham, P.; Tutmaher, J. A.; Leiner, J. C.; Lumsden, M. D.; Lavelle, C. M.; Wang, X. P.; Hoffmann, C.; Siegler, M. A.; Haldolaarachchige, N.; Young, D. P.; McQueen, T. M.

2016-01-01

Recent theoretical and experimental findings suggest the long-known but not well understood low temperature resistance plateau of SmB6 may originate from protected surface states arising from a topologically non-trivial bulk band structure having strong Kondo hybridization. Yet others have ascribed this feature to impurities, vacancies, and surface reconstructions. Given the typical methods used to prepare SmB6 single crystals, flux and floating-zone procedures, such ascriptions should not be taken lightly. We demonstrate how compositional variations and/or observable amounts of impurities in SmB6 crystals grown using both procedures affect the physical properties. From X-ray diffraction, neutron diffraction, and X-ray computed tomography experiments we observe that natural isotope containing (SmB6) and doubly isotope enriched (154Sm11B6) crystals prepared using aluminum flux contain co-crystallized, epitaxial aluminum. Further, a large, nearly stoichiometric crystal of SmB6 was successfully grown using the float-zone technique; upon continuing the zone melting, samarium vacancies were introduced. These samarium vacancies drastically alter the resistance and plateauing magnitude of the low temperature resistance compared to stoichiometric SmB6. These results highlight that impurities and compositional variations, even at low concentrations, must be considered when collecting/analyzing physical property data of SmB6. Finally, a more accurate samarium-154 coherent neutron scattering length, 8.9(1) fm, is reported. PMID:26892648

GaN grown on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

2015-04-01

High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

Hexaferrite multiferroics: from bulk to thick films

NASA Astrophysics Data System (ADS)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Carboxylate metabolism in sugar beet plants grown with excess Zn.

PubMed

Sagardoy, R; Morales, F; Rellán-Álvarez, R; Abadía, A; Abadía, J; López-Millán, A F

2011-05-01

The effects of Zn excess on carboxylate metabolism were investigated in sugar beet (Beta vulgaris L.) plants grown hydroponically in a growth chamber. Root extracts of plants grown with 50 or 100μM Zn in the nutrient solution showed increases in several enzymatic activities related to organic acid metabolism, including citrate synthase and phosphoenolpyruvate carboxylase, when compared to activities in control root extracts. Root citric and malic acid concentrations increased in plants grown with 100μM Zn, but not in plants grown with 50μM Zn. In the xylem sap, plants grown with 50 and 100μM Zn showed increases in the concentrations of citrate and malate compared to the controls. Leaves of plants grown with 50 or 100μM Zn showed increases in the concentrations of citric and malic acid and in the activities of citrate synthase and fumarase. Leaf isocitrate dehydrogenase increased only in plants grown with 50μM Zn when compared to the controls. In plants grown with 300μM Zn, the only enzyme showing activity increases in root extracts was citrate synthase, whereas the activities of other enzymes decreased compared to the controls, and root citrate concentrations increased. In the 300μM Zn-grown plants, the xylem concentrations of citric and malic acids were higher than those of controls, whereas in leaf extracts the activity of fumarase increased markedly, and the leaf citric acid concentration was higher than in the controls. Based on our data, a metabolic model of the carboxylate metabolism in sugar beet plants grown under Zn excess is proposed. Copyright © 2010 Elsevier GmbH. All rights reserved.

CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

NASA Astrophysics Data System (ADS)

Dimkpa, Christian O.; McLean, Joan E.; Latta, Drew E.; Manangón, Eliana; Britt, David W.; Johnson, William P.; Boyanov, Maxim I.; Anderson, Anne J.

2012-09-01

Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (<50 nm) and ZnO (<100 nm) NPs on wheat ( Triticum aestivum) grown in a solid matrix, sand. The NPs contained both metallic and non-metallic impurities to different extents. Dynamic light scattering and atomic force microscopy (AFM) assessments confirmed aggregation of the NPs to submicron sizes. AFM showed transformation of ZnO NPs from initial rhomboid shapes in water to elongated rods in the aqueous phase of the sand matrix. Solubilization of metals occurred in the sand at similar rates from CuO or ZnO NPs as their bulk equivalents. Amendment of the sand with 500 mg Cu and Zn/kg sand from the NPs significantly ( p = 0.05) reduced root growth, but only CuO NPs impaired shoot growth; growth reductions were less with the bulk amendments. Dissolved Cu from CuO NPs contributed to their phytotoxicity but Zn release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

Synthesis and structural characterization of bulk Sb2Te3 single crystal

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

Efficient bulk-loading of gridfiles

NASA Technical Reports Server (NTRS)

Leutenegger, Scott T.; Nicol, David M.

1994-01-01

This paper considers the problem of bulk-loading large data sets for the gridfile multiattribute indexing technique. We propose a rectilinear partitioning algorithm that heuristically seeks to minimize the size of the gridfile needed to ensure no bucket overflows. Empirical studies on both synthetic data sets and on data sets drawn from computational fluid dynamics applications demonstrate that our algorithm is very efficient, and is able to handle large data sets. In addition, we present an algorithm for bulk-loading data sets too large to fit in main memory. Utilizing a sort of the entire data set it creates a gridfile without incurring any overflows.

Longitudinal and bulk viscosities of Lennard-Jones fluids

NASA Astrophysics Data System (ADS)

Tankeshwar, K.; Pathak, K. N.; Ranganathan, S.

1996-12-01

Expressions for the longitudinal and bulk viscosities have been derived using Green Kubo formulae involving the time integral of the longitudinal and bulk stress autocorrelation functions. The time evolution of stress autocorrelation functions are determined using the Mori formalism and a memory function which is obtained from the Mori equation of motion. The memory function is of hyperbolic secant form and involves two parameters which are related to the microscopic sum rules of the respective autocorrelation function. We have derived expressions for the zeroth-, second-and fourth- order sum rules of the longitudinal and bulk stress autocorrelation functions. These involve static correlation functions up to four particles. The final expressions for these have been put in a form suitable for numerical calculations using low- order decoupling approximations. The numerical results have been obtained for the sum rules of longitudinal and bulk stress autocorrelation functions. These have been used to calculate the longitudinal and bulk viscosities and time evolution of the longitudinal stress autocorrelation function of the Lennard-Jones fluids over wide ranges of densities and temperatures. We have compared our results with the available computer simulation data and found reasonable agreement.

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

Multijunction (MJ) photovoltaics are the most efficient solar cells today. Under sufficient solar concentration, these devices can achieve over 44% efficiency, roughly twenty percentage points higher than single crystal silicon based solar cells. Current records for triple junction (3J) multijunction cells are being challenged and broken regularly. However, it is unclear at this time which method of device growth will ultimately produce an efficiency that approaches the Shockley-Queisser limit. Lattice-matched (LM) MJ cells offer benefits over metamorphic and/or inverted metamorphic cells in that the device can be grown continuously, require no extra fabrication steps, and will ultimate produce the highest material quality throughout all junctions. The efficiency of current 3JMJ cells composed of GaInP(1.8eV)/(In)GaAs(1.4eV)/Ge(0.7eV) is limited by the bandgap combination used in the structure. The low energy bandgap bottom Ge cell produces roughly twice as much current as the middle GaAs cell and results in a current mismatch that limits the total current and thus total efficiency. By replacing the middle GaAs subcell with a 1-1.2eV subcell, the current mismatch could be alleviated and the efficiency enhanced. Unfortunately, there are no semiconductors lattice-matched to GaAs/Ge with this bandgap. InGaAs, which has a larger lattice constant than GaAs/Ge, can be grown with the appropriate bandgap, but due to compressive stresses introduced during growth the thickness that can be grown is limited to tens of nanometers, thus limiting absorption and current production. However, by growing layers of tensile strained GaAsP with appropriate thickness and composition, the stresses introduced by the InGaAs can be balanced. By repeating this process and inserting these layers into the intrinsic region of the GaAs middle subcell, a low bandgap material with an effective lattice constant equal to that of GaAs is introduced while maintaining lattice-matching conditions. The InGaAs

Relaxor properties of barium titanate crystals grown by Remeika method

NASA Astrophysics Data System (ADS)

Roth, Michel; Tiagunov, Jenia; Dul'kin, Evgeniy; Mojaev, Evgeny

2017-06-01

Barium titanate (BaTiO3, BT) crystals have been grown by the Remeika method using both the regular KF and mixed KF-NaF (0.6-0.4) solvents. Typical acute angle "butterfly wing" BT crystals have been obtained, and they were characterized using x-ray diffraction, scanning electron microscopy (including energy dispersive spectroscopy), conventional dielectric and acoustic emission methods. A typical wing has a triangular plate shape which is up to 0.5 mm thick with a 10-15 mm2 area. The plate has a (001) habit and an atomically smooth outer surface. Both K+ and F- solvent ions are incorporated as dopants into the crystal lattice during growth substituting for Ba2+ and O2- ions respectively. The dopants' distribution is found to be inhomogeneous, their content being almost an order of magnitude higher (up to 2 mol%) at out surface of the plate relatively to the bulk. A few μm thick surface layer is formed where a multidomain ferroelectric net is confined between two≤1 μm thick dopant-rich surfaces. The layer as a whole possess relaxor ferroelectric properties, which is apparent from the appearance of additional broad maxima, Tm, in the temperature dependence of the dielectric permittivity around the ferroelectric phase transition. Intense acoustic emission responses detected at temperatures corresponding to the Tm values allow to observe the Tm shift to lower temperatures at higher frequencies, or dispersion, typical for relaxor ferroelectrics. The outer surface of the BT wing can thus serve as a relaxor thin film for various electronic application, such as capacitors, or as a substrate for BT-based multiferroic structure. Crystals grown from KF-NaF fluxes contain sodium atoms as an additional impurity, but the crystal yield is much smaller, and while the ferroelectric transition peak is diffuse it does not show any sign of dispersion typical for relaxor behavior.

Onset of bulk pinning in BSCCO single crystals

NASA Astrophysics Data System (ADS)

van der Beek, C. J.; Indenbom, M. V.; Berseth, V.; Li, T. W.; Benoit, W.

1996-11-01

The long growth defects often found in Bi2Sr2CaCu2O8, “single” crystals effectively weaken the geometrical barrier and lower the field of first flux penetration. This means that the intrinsic (bulk) magnetic properties can be more easily accessed using magnetic measurements. Thus, the onset of strong bulk flux pinning in the sample bulk is determined to lie at T ≈ 40 K, indepedent of whether the field strength is above or below the field of the second peak in the magnetisation.

Phenomenological constraints on the bulk viscosity of QCD

NASA Astrophysics Data System (ADS)

Paquet, Jean-François; Shen, Chun; Denicol, Gabriel; Jeon, Sangyong; Gale, Charles

2017-11-01

While small at very high temperature, the bulk viscosity of Quantum Chromodynamics is expected to grow in the confinement region. Although its precise magnitude and temperature-dependence in the cross-over region is not fully understood, recent theoretical and phenomenological studies provided evidence that the bulk viscosity can be sufficiently large to have measurable consequences on the evolution of the quark-gluon plasma. In this work, a Bayesian statistical analysis is used to establish probabilistic constraints on the temperature-dependence of bulk viscosity using hadronic measurements from RHIC and LHC.

Protein Crystals Grown in Space

NASA Technical Reports Server (NTRS)

2000-01-01

A collage of protein and virus crystals, many of which were grown on the U.S. Space Shuttle or Russian Space Station, Mir. The crystals include the proteins canavalin; mouse monoclonal antibody; a sweet protein, thaumatin; and a fungal protease. Viruses are represented here by crystals of turnip yellow mosaic virus and satellite tobacco mosaic virus. The crystals are photographed under polarized light (thus causing the colors) and range in size from a few hundred microns in edge length up to more than a millimeter. All the crystals are grown from aqueous solutions and are useful for X-ray diffraction analysis. Credit: Dr. Alex McPherson, University of California, Irvine.

Micro benchtop optics by bulk silicon micromachining

DOEpatents

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

PubMed Central

Rowell, N L; Benkouider, A; Ronda, A; Favre, L; Berbezier, I

2014-01-01

Summary We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning for the preferential nucleation and growth of these well-organized NWs. The NWs thus produced have a diameter of 200 nm, a length of 200 nm, and a Ge concentration x = 0.15. Their photoluminescence (PL) spectra were measured at low temperatures (from 6 to 25 K) with excitation at 405 and 458 nm. There are four major features in the energy range of interest (980–1120 meV) at energies of 1040.7, 1082.8, 1092.5, and 1098.5 meV, which are assigned to the NW-transverse optic (TO) Si–Si mode, NW-transverse acoustic (TA), Si–substrate–TO and NW-no-phonon (NP) lines, respectively. From these results the NW TA and TO phonon energies are found to be 15.7 and 57.8 meV, respectively, which agree very well with the values expected for bulk Si1− xGex with x = 0.15, while the measured NW NP energy of 1099 meV would indicate a bulk-like Ge concentration of x = 0.14. Both of these concentrations values, as determined from PL, are in agreement with the target value. The NWs are too large in diameter for a quantum confinement induced energy shift in the band gap. Nevertheless, NW PL is readily observed, indicating that efficient carrier recombination is occurring within the NWs. PMID:25671145

49 CFR 173.37 - Hazardous Materials in Flexible Bulk Containers.

Code of Federal Regulations, 2013 CFR

2013-10-01

... an external visual inspection by the person filling the Flexible Bulk Container to ensure: (1) The... transported in cargo transport units when offered for transportation by vessel. (7) Flexible Bulk Containers... 49 Transportation 2 2013-10-01 2013-10-01 false Hazardous Materials in Flexible Bulk Containers...

49 CFR 173.37 - Hazardous Materials in Flexible Bulk Containers.

Code of Federal Regulations, 2014 CFR

2014-10-01

... an external visual inspection by the person filling the Flexible Bulk Container to ensure: (1) The... transported in cargo transport units when offered for transportation by vessel. (7) Flexible Bulk Containers... 49 Transportation 2 2014-10-01 2014-10-01 false Hazardous Materials in Flexible Bulk Containers...

Ultraviolet photoelectron spectroscopy reveals energy-band dispersion for π-stacked 7,8,15,16-tetraazaterrylene thin films in a donor–acceptor bulk heterojunction

NASA Astrophysics Data System (ADS)

Aghdassi, Nabi; Wang, Qi; Ji, Ru-Ru; Wang, Bin; Fan, Jian; Duhm, Steffen

2018-05-01

7,8,15,16-tetraazaterrylene (TAT) thin films grown on highly oriented pyrolytic graphite (HOPG) substrates were studied extensively with regard to their intrinsic and interfacial electronic properties by means of ultraviolet photoelectron spectroscopy (UPS). Merely weak substrate–adsorbate interaction occurs at the TAT/HOPG interface, with interface energetics being only little affected by the nominal film thickness. Photon energy-dependent UPS performed perpendicular to the molecular planes of TAT multilayer films at room temperature clearly reveals band-like intermolecular dispersion of the TAT highest occupied molecular orbital (HOMO) energy. Based on a comparison with a tight-binding model, a relatively narrow bandwidth of 54 meV is derived, which points to the presence of an intermediate regime between hopping and band-like hole transport. Upon additional deposition of 2,2‧:5‧,2″:5″,2″‧-quaterthiophene (4T), a 4T:TAT donor–acceptor bulk heterojunction with a considerable HOMO-level offset at the donor–acceptor interface is formed. The 4T:TAT bulk heterojunction likewise exhibits intermolecular dispersion of the TAT HOMO energy, yet with a significant decreased bandwidth.

The impact of compaction, moisture content, particle size and type of bulking agent on initial physical properties of sludge-bulking agent mixtures before composting.

PubMed

Huet, J; Druilhe, C; Trémier, A; Benoist, J C; Debenest, G

2012-06-01

This study aimed to experimentally acquire evolution profiles between depth, bulk density, Free Air Space (FAS), air permeability and thermal conductivity in initial composting materials. The impact of two different moisture content, two particle size and two types of bulking agent on these four parameters was also evaluated. Bulk density and thermal conductivity both increased with depth while FAS and air permeability both decreased with it. Moreover, depth and moisture content had a significant impact on almost all the four physical parameters contrary to particle size and the type of bulking agent. Copyright © 2012 Elsevier Ltd. All rights reserved.

46 CFR 97.12-5 - Bulk solid cargoes that may liquefy.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Bulk solid cargoes that may liquefy. 97.12-5 Section 97... VESSELS OPERATIONS Bulk Solid Cargoes § 97.12-5 Bulk solid cargoes that may liquefy. If the information provided in § 97.12-3(a) or (b) indicates that the bulk solid cargo to be carried is prone to liquefy...

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe, and ZnSe(1-x)Te(x)(0 less than x less than 0.4) grown by physical vapor transport. Energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. A best fit curve to the band gap versus composition x data gives a bowing parameter of 1.45. This number lies between the value of 1.23 determined previously on ZnSeTe bulk crystals and the value of 1.621 reported on ZnSeTe epilayers. Low-temperature photoluminescence (PL) spectra were measured on six samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe(1-x)Te(x) samples, 0.09 less than x less than 0.39. For x=0.09, this emission energy is about 0.2 eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x=0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples.

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Graphic Grown Up

ERIC Educational Resources Information Center

Kim, Ann

2009-01-01

It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

Occurrence of squalene in methanol-grown bacteria.

PubMed Central

Goldberg, I; Shechter, I

1978-01-01

The nonpolar lipids of methanol-grown bacteria which utilize one-carbon (C1) compounds via the RMP pathway (Pseudomonas C, Pseudomonas methylotropha, and Methylomonas methanolica) were found to contain squalene in concentrations between 0.1 to 1.16 mg/g of cell (dry weight). Squalene could not be detected in lipid extracts of methanol-grown bacteria which utilize C1 compounds via the serine pathway. PMID:98521

Response of sun-grown and shade-grown northern red oak seedlings to outplanting in clearcuts and shelterwoods in North Alabama

Treesearch

Callie Jo Schweitzer; Emile S. Gardiner; David L. Loftis

2006-01-01

The primary objective of this study was to determine if greenhouse light environment would affect outplanting success for northern red oak (Quercus rubra L.) in clearcuts and shelterwoods. In 2002, northern red oak seedlings were grown from acorns under full-ambient (sun) and half-ambient (shade) light conditions in a greenhouse. Seedlings grown...

Atmospheric CH 4 and H 2 O Monitoring With Near-Infrared InGaAs Laser Diodes by the SDLA, a Balloonborne Spectrometer for Tropospheric and Stratospheric In Situ Measurements

NASA Astrophysics Data System (ADS)

Durry, Georges; Megie, Gerard

1999-12-01

The Spectrom tre Diodes Laser Accordables (SDLA), a balloonborne spectrometer devoted to the in situ measurement of CH 4 and H 2 O in the atmosphere that uses commercial distributed-feedback InGaAs laser diodes in combination with differential absorption spectroscopy, is described. Absorption spectra of CH 4 (in the 1.653- m region) and H 2 O (in the 1.393- m region) are simultaneously sampled at 1-s intervals by coupling with optical fibers of two near-infrared laser diodes to a Herriott multipass cell open to the atmosphere. Spectra of methane and water vapor in an altitude range of 1 to 31 km recorded during the recent balloon flights of the SDLA are presented. Mixing ratios with a precision error ranging from 5% to 10% are retrieved from the atmospheric spectra by a nonlinear least-squares fit to the spectral line shape in conjunction with in situ simultaneous pressure and temperature measurements.

Bulk and edge spin transport in topological magnon insulators

NASA Astrophysics Data System (ADS)

Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

2018-02-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

Nucleolus in clinostat-grown plants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen-Miller, J.; Dannenhoffer, J.; Hinchman, R.

1991-05-01

The clinostat is an apparatus that is used to mimic zero gravity in studies of plant growth in the absence of gravitropic response. Clinostat-grown tissue cultures of carrot exhibit significant increases both in the number of nuclei containing more than one nucleolus and in nucleolar volume. Oat seedlings germinated and grown on clinostats exhibit a decreased rate of shoot elongation, increased tissue sensitivity to applied auxin, and an increased response to gravitropic stimulation. Clinostat treatment clearly affects plant metabolism. The nucleolus is the region in the nucleus where ribosome synthesis and assembly take place. The 18S, 5.8S, and 25S ribosomalmore » genes, in tandem units, are located in the nucleolus. Ribosomes orchestrate the production of all proteins that are necessary for the maintenance of cell growth, development, and survival. A full study of the effects of nullification of gravitropism, by clinostat rotation, on nucleolar development in barley has been initiated. The authors study developmental changes of nucleolar number and diameter in clinostat-grown root tissues. Preliminary results show that barley roots exhibit changes in nucleolar number and diameter. Growth rates of barley root and shoot also appear to be reduced, in measurements of both length and weight.« less

Video of Tissue Grown in Space in NASA Bioreactor

NASA Technical Reports Server (NTRS)

2003-01-01

Principal investigator Leland Chung grew prostate cancer and bone stromal cells aboard the Space Shuttle Columbia during the STS-107 mission. Although the experiment samples were lost along with the ill-fated spacecraft and crew, he did obtain downlinked video of the experiment that indicates the enormous potential of growing tissues in microgravity. Cells grown aboard Columbia had grown far larger tissue aggregates at day 5 than did the cells grown in a NASA bioreactor on the ground.

Increased occurrence of pesticide residues on crops grown in protected environments compared to crops grown in open field conditions.

PubMed

Allen, Gina; Halsall, Crispin J; Ukpebor, Justina; Paul, Nigel D; Ridall, Gareth; Wargent, Jason J

2015-01-01

Crops grown under plastic-clad structures or in greenhouses may be prone to an increased frequency of pesticide residue detections and higher concentrations of pesticides relative to equivalent crops grown in the open field. To test this we examined pesticide data for crops selected from the quarterly reports (2004-2009) of the UK's Pesticide Residue Committee. Five comparison crop pairs were identified whereby one crop of each pair was assumed to have been grown primarily under some form of physical protection ('protected') and the other grown primarily in open field conditions ('open'). For each pair, the number of detectable pesticide residues and the proportion of crop samples containing pesticides were statistically compared (n=100 s samples for each crop). The mean concentrations of selected photolabile pesticides were also compared. For the crop pairings of cabbage ('open') vs. lettuce ('protected') and 'berries' ('open') vs. strawberries ('protected') there was a significantly higher number of pesticides and proportion of samples with multiple residues for the protected crops. Statistically higher concentrations of pesticides, including cypermethrin, cyprodinil, fenhexamid, boscalid and iprodione were also found in the protected crops compared to the open crops. The evidence here demonstrates that, in general, the protected crops possess a higher number of detectable pesticides compared to analogous crops grown in the open. This may be due to different pesticide-use regimes, but also due to slower rates of pesticide removal in protected systems. The findings of this study raise implications for pesticide management in protected-crop systems. Copyright © 2014 Elsevier Ltd. All rights reserved.

Does boundary quantum mechanics imply quantum mechanics in the bulk?

NASA Astrophysics Data System (ADS)

Kabat, Daniel; Lifschytz, Gilad

2018-03-01

Perturbative bulk reconstruction in AdS/CFT starts by representing a free bulk field ϕ (0) as a smeared operator in the CFT. A series of 1 /N corrections must be added to ϕ (0) to represent an interacting bulk field ϕ. These corrections have been determined in the literature from several points of view. Here we develop a new perspective. We show that correlation functions involving ϕ (0) suffer from ambiguities due to analytic continuation. As a result ϕ (0) fails to be a well-defined linear operator in the CFT. This means bulk reconstruction can be understood as a procedure for building up well-defined operators in the CFT which thereby singles out the interacting field ϕ. We further propose that the difficulty with defining ϕ (0) as a linear operator can be re-interpreted as a breakdown of associativity. Presumably ϕ (0) can only be corrected to become an associative operator in perturbation theory. This suggests that quantum mechanics in the bulk is only valid in perturbation theory around a semiclassical bulk geometry.

Evaluation and remediation of bulk soap dispensers for biofilm.

PubMed

Lorenz, Lindsey A; Ramsay, Bradley D; Goeres, Darla M; Fields, Matthew W; Zapka, Carrie A; Macinga, David R

2012-01-01

Recent studies evaluating bulk soap in public restroom soap dispensers have demonstrated up to 25% of open refillable bulk-soap dispensers were contaminated with ~ 6 log(10)(CFU ml(-1)) heterotrophic bacteria. In this study, plastic counter-mounted, plastic wall-mounted and stainless steel wall-mounted dispensers were analyzed for suspended and biofilm bacteria using total cell and viable plate counts. Independent of dispenser type or construction material, the bulk soap was contaminated with 4-7 log(10)(CFU ml(-1)) bacteria, while 4-6 log(10)(CFU cm(-2)) biofilm bacteria were isolated from the inside surfaces of the dispensers (n = 6). Dispenser remediation studies, including a 10 min soak with 5000 mg l(-1) sodium hypochlorite, were then conducted to determine the efficacy of cleaning and disinfectant procedures against established biofilms. The testing showed that contamination of the bulk soap returned to pre-test levels within 7-14 days. These results demonstrate biofilm is present in contaminated bulk-soap dispensers and remediation studies to clean and sanitize the dispensers are temporary.

Influence of shading on container-grown flowering dogwoods

USDA-ARS?s Scientific Manuscript database

Bare root dogwoods can be successfully grown when transplanted into a container production system. Shade treatments regardless of color or density did have an effect on the plant growth of Cherokee Brave™ and Cherokee Princess dogwood. Plants grown under 50% black and 50% white shade had more heigh...

7 CFR 51.1356 - Pears grown from late blooms.

Code of Federal Regulations, 2014 CFR

2014-01-01

... (INSPECTION, CERTIFICATION, AND STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems...

7 CFR 51.1356 - Pears grown from late blooms.

Code of Federal Regulations, 2013 CFR

2013-01-01

... (INSPECTION, CERTIFICATION, AND STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems...

Bulk local states and crosscaps in holographic CFT

DOE PAGES

Nakayama, Yu; Ooguri, Hirosi

2016-10-17

In a weakly coupled gravity theory in the anti-de Sitter space, local states in the bulk are linear superpositions of Ishibashi states for a crosscap in the dual conformal field theory. The superposition structure can be constrained either by the microscopic causality in the bulk gravity or the bootstrap condition in the boundary conformal field theory. We show, contrary to some expectation, that these two conditions are not compatible to each other in the weak gravity regime. As a result, we also present an evidence to show that bulk local states in three dimensions are not organized by the Virasoromore » symmetry.« less

Comparative Floral Development of Mir-Grown and Ethylene-Treated, Earth-Grown Super Dwarf Wheat

NASA Technical Reports Server (NTRS)

Campbell, William F.; Salisbury, Frank B.; Bugbee, Bruce; Klassen, Steven; Naegle, Erin; Strickland, Darren T.; Bingham, Gail E.; Levinskikh, Margarita; Iljina, Galena M.; Veselova, Tatjana D.

2001-01-01

To study plant growth in microgravity, we grew Super Dwarf wheat (Triticum aestivum L.) in the Svet growth chamber onboard the orbiting Russian space station, Mir, and in identical ground control units at the Institute of BioMedical Problems in Moscow, Russia. Seedling emergence was 56% and 73% in the two root-module compartments on Mir and 75% and 90% on Earth. Growth was vigorous (produced ca. 1 kg dry mass), and individual plants produced 5 to 8 tillers on Mir compared with 3 to 5 on Earth-grown controls. Upon harvest in space and return to Earth, however, all inflorescences of the flight-grown plants were sterile. To ascertain if Super Dwarf wheat responded to the 1.1 to 1.7 micromol/mol atmospheric levels of ethylene measured on the Mir prior to and during flowering, plants on earth were exposed to 0, 1, 3, 10, and 20 micromol/mol of ethylene gas and 1200 micromol/mol CO2 from 7d after emergence to maturity. As in our Mir wheat, plant height, awn length, and the flag leaf were significantly shorter in the ethylene-exposed plants than in controls; inflorescences also exhibited 100% sterility. Scanning electron microscopic (SEM) examination of florets from Mir-grown and ethylene-treated, earth-grown plants showed that development ceased prior to anthesis, and the anthers did not dehisce. Laser scanning confocal microscopic (LSCM) examination of pollen grains from Mir and ethylene-treated plants on earth exhibited zero, one, and occasionally two, but rarely three nuclei; pollen produced in the absence of ethylene was always trinucleate, the normal condition. The scarcity of trinucleate pollen, abrupt cessation of floret development prior to anthesis, and excess tillering in wheat plants on Mir and in ethylene-containing atmospheres on earth build a strong case for the ethylene on Mir as the agent for the induced male sterility and other symptoms, rather than microgravity.

Physical and mechanical properties of saligna eucalyptus grown in Hawaii

Treesearch

C.C. Gerhards

1965-01-01

Physical and mechanical properties were determined for saligna eucalyptus (Eucalyptus saligna, Smith) grown in Hawaii. In comparison with wood of the same species grown in Australia, saligna eucalyptus grown in Hawaii was lower in density, shrinkage, and compressive strength parallel to grain; it was about equal in strength in bending and shear; and it was stiffer....

Accidental SUSY: enhanced bulk supersymmetry from brane back-reaction

NASA Astrophysics Data System (ADS)

Burgess, C. P.; van Nierop, L.; Parameswaran, S.; Salvio, A.; Williams, M.

2013-02-01

We compute how bulk loops renormalize both bulk and brane effective interactions for codimension-two branes in 6D gauged chiral supergravity, as functions of the brane tension and brane-localized flux. We do so by explicitly integrating out hyper- and gauge-multiplets in 6D gauged chiral supergravity compactified to 4D on a flux-stabilized 2D rugby-ball geometry, specializing the results of a companion paper, arXiv:1210.3753, to the supersymmetric case. While the brane back-reaction generically breaks supersymmetry, we show that the bulk supersymmetry can be preserved if the amount of brane- localized flux is related in a specific BPS-like way to the brane tension, and verify that the loop corrections to the brane curvature vanish in this special case. In these systems it is the brane-bulk couplings that fix the size of the extra dimensions, and we show that in some circumstances the bulk geometry dynamically adjusts to ensure the supersymmetric BPS-like condition is automatically satisfied. We investigate the robustness of this residual supersymmetry to loops of non-supersymmetric matter on the branes, and show that supersymmetry-breaking effects can enter only through effective brane-bulk interactions involving at least two derivatives. We comment on the relevance of this calculation to proposed applications of codimension-two 6D models to solutions of the hierarchy and cosmological constant problems.

Dirac Fermions without bulk backscattering in rhombohedral topological insulators

NASA Astrophysics Data System (ADS)

Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto

2015-03-01

The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).

46 CFR 97.12-1 - Bulk ores and similar cargoes.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Bulk ores and similar cargoes. 97.12-1 Section 97.12-1... OPERATIONS Cargo Stowage § 97.12-1 Bulk ores and similar cargoes. (a) The owners or operators of general cargo vessels which carry bulk cargoes such as ore, ore concentrates, and similar cargoes shall furnish...

Palm-size miniature superconducting bulk magnet

NASA Astrophysics Data System (ADS)

Saho, Norihide; Matsuda, Kazuya; Nishijima, Noriyo

The development of a small, light, powerful and energy-efficient superconducting magnet has been desired in order to realize better efficiency and manipulability in guiding magnetic nano-particles, magnetic organic cells and other items to the right place. This study focuses on the development of a high-temperature superconducting (HTS) bulk magnet characterized by comparatively low leak magnetism despite a relatively high magnetic field. On this basis, the authors developed a palm-sized superconducting bulk magnet, which is the world's smallest, lightest, and lowest power consuming, as well as a new technology to effectively magnetize such a bulk magnet in a compact Stirling-cycle cryocooler (magnet C) with a pre-magnetized HTS bulk magnet (magnet B) in a compact cryocooler. This technology is demonstrated in two steps. In the first step, magnet B is magnetized using a superconducting solenoid magnet with a high magnetic field (magnet A) via the field cooling method. In the second step, magnet C is magnetized in the high magnetic field of magnet B. The prototype magnet C weighs 1.8 kg, and measures 235 × 65 × 115 mm (L × W × H). Magnet B was magnetized to 4.9 T using a 5 T magnet, and the target, magnet C, was magnetized using magnet B so that its maximum trapped magnetic flux density reached the value of 3.15 T. The net power consumption in a steady cooling state was 23 W, which is very low and comparable to that of a laptop computer.

Orchestrating Bulk Data Movement in Grid Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vazhkudai, SS

2005-01-25

Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralizedmore » data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.« less

The Ties That Bind: Midlife Parents' Daily Experiences With Grown Children.

PubMed

Fingerman, Karen L; Kim, Kyungmin; Birditt, Kira S; Zarit, Steven H

2016-04-01

Daily pleasant or stressful experiences with grown children may contribute to parental well-being. This diary study focused on midlife parents' ( N = 247) reports regarding grown children for 7 days. Nearly all parents (96%) had contact with a child that week via phone, text, or in person. Nearly all parents shared laughter or enjoyable interactions with grown children during the study week. More than half of parents experienced stressful encounters (e.g., child got on nerves) or stressful thoughts about grown children (e.g., worrying, fretting about a problem). Pleasant and stressful experiences with grown children were associated with parents' positive and negative daily moods. A pleasant experience with a grown child the same day as a stressful experience mitigated effects of those stressful experiences on negative mood, however. The findings have implications for understanding intergenerational ambivalence and stress buffering in this tie.

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Amin, M., E-mail: m.al-amin@warwick.ac.uk; Murphy, J. D., E-mail: john.d.murphy@warwick.ac.uk

2016-06-21

We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poormore » wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.« less

Selenium biofortification of broccoli and carrots grown in soil amended with Se-enriched hyperaccumulator Stanleya pinnata.

PubMed

Bañuelos, Gary S; Arroyo, Irvin; Pickering, Ingrid J; Yang, Soo In; Freeman, John L

2015-01-01

Amending soils with Se-hyperaccumulator plant derived sources of selenium (Se) may be useful for increasing the Se content in food crops in Se-deficient regions of the world. In this study we evaluated total Se and the different chemical species of Se in broccoli and carrots grown in soils amended with ground shoots of the Se-hyperaccumulator Stanleyapinnata. With increasing application rates of S. pinnata, total plant Se concentrations increased to nutritionally ideal levels inside edible parts. Selenium compounds in aqueous extracts were analyzed by SAX-HPLC-ICPMS and identified as a variety of mainly organic-Se forms. Together with bulk Se K-edge X-ray absorption near-edge structure (XANES) analysis performed on broccoli florets, carrot roots and shoots, dried ground S. pinnata, and the amended soil at post-plant, we demonstrate that Se-enriched S. pinnata is valuable as a soil amendment for enriching broccoli and carrots with healthful forms of organic-Se. Published by Elsevier Ltd.

7 CFR 51.1356 - Pears grown from late blooms.

Code of Federal Regulations, 2012 CFR

2012-01-01

... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat tails...

7 CFR 51.1356 - Pears grown from late blooms.

Code of Federal Regulations, 2010 CFR

2010-01-01

... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat tails...

7 CFR 51.1356 - Pears grown from late blooms.

Code of Federal Regulations, 2011 CFR

2011-01-01

... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat tails...

Are randomly grown graphs really random?

PubMed

Callaway, D S; Hopcroft, J E; Kleinberg, J M; Newman, M E; Strogatz, S H

2001-10-01

We analyze a minimal model of a growing network. At each time step, a new vertex is added; then, with probability delta, two vertices are chosen uniformly at random and joined by an undirected edge. This process is repeated for t time steps. In the limit of large t, the resulting graph displays surprisingly rich characteristics. In particular, a giant component emerges in an infinite-order phase transition at delta=1/8. At the transition, the average component size jumps discontinuously but remains finite. In contrast, a static random graph with the same degree distribution exhibits a second-order phase transition at delta=1/4, and the average component size diverges there. These dramatic differences between grown and static random graphs stem from a positive correlation between the degrees of connected vertices in the grown graph-older vertices tend to have higher degree, and to link with other high-degree vertices, merely by virtue of their age. We conclude that grown graphs, however randomly they are constructed, are fundamentally different from their static random graph counterparts.

The bulk composition of Titan's atmosphere.

NASA Technical Reports Server (NTRS)

Trafton, L.

1972-01-01

Consideration of the physical constraints for Titan's atmosphere leads to a model which describes the bulk composition of the atmosphere in terms of observable parameters. Intermediate-resolution photometric scans of both Saturn and Titan, including scans of the Q branch of Titan's methane band, constrain these parameters in such a way that the model indicates the presence of another important atmospheric gas, namely, another bulk constituent or a significant thermal opacity. Further progress in determining the composition and state of Titan's atmosphere requires additional observations to eliminate present ambiguities. For this purpose, particular observational targets are suggested.

On the Chemistry and Physical Properties of Flux and Floating Zone Grown SmB 6 Single Crystals

DOE PAGES

Phelan, W. A.; Koohpayeh, S. M.; Cottingham, P.; ...

2016-02-19

Recent theoretical and experimental findings suggest the long-known but not well understood low temperature resistance plateau of SmB 6 may originate from protected surface states arising from a topologically non-trivial bulk band structure having strong Kondo hybridization. Yet others have ascribed this feature to impurities, vacancies, and surface reconstructions. Given the typical methods used to prepare SmB 6 single crystals, flux and floating-zone procedures, such ascriptions should not be taken lightly. We demonstrate how compositional variations and/or observable amounts of impurities in SmB 6 crystals grown using both procedures affect the physical properties. From X-ray diffraction, neutron diffraction, and X-raymore » computed tomography experiments we observe that natural isotope containing (SmB 6) and doubly isotope enriched ( 154Sm 11B 6) crystals prepared using aluminum flux contain co-crystallized, epitaxial aluminum. Further, a large, nearly stoichiometric crystal of SmB 6 was successfully grown using the float-zone technique; upon continuing the zone melting, samarium vacancies were introduced. These samarium vacancies drastically alter the resistance and plateauing magnitude of the low temperature resistance compared to stoichiometric SmB 6. Finally, these results highlight that impurities and compositional variations, even at low concentrations, must be considered when collecting/analyzing physical property data of SmB 6. Finally, a more accurate samarium-154 coherent neutron scattering length, 8.9(1) fm, is reported.« less

Bulk Leisure--Problem or Blessing?

ERIC Educational Resources Information Center

Beland, Robert M.

1983-01-01

With an increasing number of the nation's work force experiencing "bulk leisure" time because of new work scheduling procedures, parks and recreation offices are encouraged to examine their program scheduling and content. (JM)

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Ming, E-mail: ming.xu@lgep.supelec.fr; Jaffré, Alexandre, E-mail: ming.xu@lgep.supelec.fr; Alvarez, José, E-mail: ming.xu@lgep.supelec.fr

2015-02-27

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gauthier, J.-P.; Almosni, S.; Léger, Y.

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

Novel Approach in the Use of Plasma Spray: Preparation of Bulk Titanium for Bone Augmentations

PubMed Central

Fousova, Michaela; Vojtech, Dalibor; Jablonska, Eva; Fojt, Jaroslav; Lipov, Jan

2017-01-01

Thermal plasma spray is a common, well-established technology used in various application fields. Nevertheless, in our work, this technology was employed in a completely new way; for the preparation of bulk titanium. The aim was to produce titanium with properties similar to human bone to be used for bone augmentations. Titanium rods sprayed on a thin substrate wire exerted a porosity of about 15%, which yielded a significant decrease of Young′s modulus to the bone range and provided rugged topography for enhanced biological fixation. For the first verification of the suitability of the selected approach, tests of the mechanical properties in terms of compression, bending, and impact were carried out, the surface was characterized, and its compatibility with bone cells was studied. While preserving a high enough compressive strength of 628 MPa, the elastic modulus reached 11.6 GPa, thus preventing a stress-shielding effect, a generally known problem of implantable metals. U-2 OS and Saos-2 cells derived from bone osteosarcoma grown on the plasma-sprayed surface showed good viability. PMID:28837101

Numerical modelling of iron-pnictide bulk superconductor magnetization

NASA Astrophysics Data System (ADS)

Ainslie, Mark D.; Yamamoto, Akiyasu; Fujishiro, Hiroyuki; Weiss, Jeremy D.; Hellstrom, Eric E.

2017-10-01

Iron-based superconductors exhibit a number of properties attractive for applications, including low anisotropy, high upper critical magnetic fields (H c2) in excess of 90 T and intrinsic critical current densities above 1 MA cm-2 (0 T, 4.2 K). It was shown recently that bulk iron-pnictide superconducting magnets capable of trapping over 1 T (5 K) and 0.5 T (20 K) can be fabricated with fine-grain polycrystalline Ba0.6K0.4Fe2As2 (Ba122). These Ba122 magnets were processed by a scalable, versatile and low-cost method using common industrial ceramic processing techniques. In this paper, a standard numerical modelling technique, based on a 2D axisymmetric finite-element model implementing the H -formulation, is used to investigate the magnetisation properties of such iron-pnictide bulk superconductors. Using the measured J c(B, T) characteristics of a small specimen taken from a bulk Ba122 sample, experimentally measured trapped fields are reproduced well for a single bulk, as well as a stack of bulks. Additionally, the influence of the geometric dimensions (thickness and diameter) on the trapped field is analysed, with a view of fabricating larger samples to increase the magnetic field available from such trapped field magnets. It is shown that, with current state-of-the-art superconducting properties, surface trapped fields >2 T could readily be achieved at 5 K (and >1 T at 20 K) with a sample of diameter 50 mm. Finally, an aspect ratio of between 1 and 1.5 for R/H (radius/thickness) would be an appropriate compromise between the accessible, surface trapped field and volume of superconducting material for bulk Ba122 magnets.

The Ties That Bind: Midlife Parents’ Daily Experiences With Grown Children

PubMed Central

Fingerman, Karen L.; Kim, Kyungmin; Birditt, Kira S.; Zarit, Steven H.

2015-01-01

Daily pleasant or stressful experiences with grown children may contribute to parental well-being. This diary study focused on midlife parents’ (N = 247) reports regarding grown children for 7 days. Nearly all parents (96%) had contact with a child that week via phone, text, or in person. Nearly all parents shared laughter or enjoyable interactions with grown children during the study week. More than half of parents experienced stressful encounters (e.g., child got on nerves) or stressful thoughts about grown children (e.g., worrying, fretting about a problem). Pleasant and stressful experiences with grown children were associated with parents’ positive and negative daily moods. A pleasant experience with a grown child the same day as a stressful experience mitigated effects of those stressful experiences on negative mood, however. The findings have implications for understanding intergenerational ambivalence and stress buffering in this tie. PMID:27022198

Synaptotagmin-11 inhibits clathrin-mediated and bulk endocytosis.

PubMed

Wang, Changhe; Wang, Yeshi; Hu, Meiqin; Chai, Zuying; Wu, Qihui; Huang, Rong; Han, Weiping; Zhang, Claire Xi; Zhou, Zhuan

2016-01-01

Precise and efficient endocytosis is essential for vesicle recycling during a sustained neurotransmission. The regulation of endocytosis has been extensively studied, but inhibitors have rarely been found. Here, we show that synaptotagmin-11 (Syt11), a non-Ca(2+)-binding Syt implicated in schizophrenia and Parkinson's disease, inhibits clathrin-mediated endocytosis (CME) and bulk endocytosis in dorsal root ganglion neurons. The frequency of both types of endocytic event increases in Syt11 knockdown neurons, while the sizes of endocytosed vesicles and the kinetics of individual bulk endocytotic events remain unaffected. Specifically, clathrin-coated pits and bulk endocytosis-like structures increase on the plasma membrane in Syt11-knockdown neurons. Structural-functional analysis reveals distinct domain requirements for Syt11 function in CME and bulk endocytosis. Importantly, Syt11 also inhibits endocytosis in hippocampal neurons, implying a general role of Syt11 in neurons. Taken together, we propose that Syt11 functions to ensure precision in vesicle retrieval, mainly by limiting the sites of membrane invagination at the early stage of endocytosis. © 2015 The Authors.

Developmental morphology of cover crop species exhibit contrasting behaviour to changes in soil bulk density, revealed by X-ray computed tomography

PubMed Central

Burr-Hersey, Jasmine E.; Mooney, Sacha J.; Bengough, A. Glyn; Mairhofer, Stefan

2017-01-01

Plant roots growing through soil typically encounter considerable structural heterogeneity, and local variations in soil dry bulk density. The way the in situ architecture of root systems of different species respond to such heterogeneity is poorly understood due to challenges in visualising roots growing in soil. The objective of this study was to visualise and quantify the impact of abrupt changes in soil bulk density on the roots of three cover crop species with contrasting inherent root morphologies, viz. tillage radish (Raphanus sativus), vetch (Vicia sativa) and black oat (Avena strigosa). The species were grown in soil columns containing a two-layer compaction treatment featuring a 1.2 g cm-3 (uncompacted) zone overlaying a 1.4 g cm-3 (compacted) zone. Three-dimensional visualisations of the root architecture were generated via X-ray computed tomography, and an automated root-segmentation imaging algorithm. Three classes of behaviour were manifest as a result of roots encountering the compacted interface, directly related to the species. For radish, there was switch from a single tap-root to multiple perpendicular roots which penetrated the compacted zone, whilst for vetch primary roots were diverted more horizontally with limited lateral growth at less acute angles. Black oat roots penetrated the compacted zone with no apparent deviation. Smaller root volume, surface area and lateral growth were consistently observed in the compacted zone in comparison to the uncompacted zone across all species. The rapid transition in soil bulk density had a large effect on root morphology that differed greatly between species, with major implications for how these cover crops will modify and interact with soil structure. PMID:28753645

Developmental morphology of cover crop species exhibit contrasting behaviour to changes in soil bulk density, revealed by X-ray computed tomography.

PubMed

Burr-Hersey, Jasmine E; Mooney, Sacha J; Bengough, A Glyn; Mairhofer, Stefan; Ritz, Karl

2017-01-01

Plant roots growing through soil typically encounter considerable structural heterogeneity, and local variations in soil dry bulk density. The way the in situ architecture of root systems of different species respond to such heterogeneity is poorly understood due to challenges in visualising roots growing in soil. The objective of this study was to visualise and quantify the impact of abrupt changes in soil bulk density on the roots of three cover crop species with contrasting inherent root morphologies, viz. tillage radish (Raphanus sativus), vetch (Vicia sativa) and black oat (Avena strigosa). The species were grown in soil columns containing a two-layer compaction treatment featuring a 1.2 g cm-3 (uncompacted) zone overlaying a 1.4 g cm-3 (compacted) zone. Three-dimensional visualisations of the root architecture were generated via X-ray computed tomography, and an automated root-segmentation imaging algorithm. Three classes of behaviour were manifest as a result of roots encountering the compacted interface, directly related to the species. For radish, there was switch from a single tap-root to multiple perpendicular roots which penetrated the compacted zone, whilst for vetch primary roots were diverted more horizontally with limited lateral growth at less acute angles. Black oat roots penetrated the compacted zone with no apparent deviation. Smaller root volume, surface area and lateral growth were consistently observed in the compacted zone in comparison to the uncompacted zone across all species. The rapid transition in soil bulk density had a large effect on root morphology that differed greatly between species, with major implications for how these cover crops will modify and interact with soil structure.

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

DOE PAGES

Hill, Megan O.; Calvo-Almazan, Irene; Allain, Marc; ...

2018-01-08

III - As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 2110 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largelymore » unaffected, leaving the band structure unperturbed. Diffraction patterns from the 0110 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the in operando imaging of nanowire devices.« less

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hill, Megan O.; Calvo-Almazan, Irene; Allain, Marc

III - As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 2110 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largelymore » unaffected, leaving the band structure unperturbed. Diffraction patterns from the 0110 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the in operando imaging of nanowire devices.« less

Cellular Lipids of a Nocardia Grown on Propane and n-Butane

PubMed Central

Davis, J. B.

1964-01-01

Lipid fractions of propane- and n-butane-grown nocardial cells each contain a chloroform-soluble, ether-insoluble polymer not observed previously in liquid n-alkane-grown cells. The polymer in propane-grown cells is poly-β-hydroxybutyrate. The polymer in n-butane-grown cells apparently contains unsaturation in the molecule, and is identified tentatively as a co-polymer of β-hydroxybutyric and β-hydroxybutenoic (specifically 3-hydroxy 2-butenoic) acids. The other major component of the lipid fraction consists of triglycerides containing principally palmitic and stearic acids. There seems to be little qualitative distinction in the glycerides of propane- or n-butane-grown cells. Oxidative assimilation of n-butane is described. PMID:14199017

Physico-mechanical characteristics of commercially available bulk-fill composites.

PubMed

Leprince, Julian G; Palin, William M; Vanacker, Julie; Sabbagh, Joseph; Devaux, Jacques; Leloup, Gaetane

2014-08-01

Bulk-fill composites have emerged, arguably, as a new "class" of resin-based composites, which are claimed to enable restoration in thick layers, up to 4mm. The objective of this work was to compare, under optimal curing conditions, the physico-mechanical properties of most currently available bulk-fill composites to those of two conventional composite materials chosen as references, one highly filled and one flowable "nano-hybrid" composite. Tetric EvoCeram Bulk Fill (Ivoclar-Vivadent), Venus Bulk Fill (Heraeus-Kulzer), SDR (Dentsply), X-tra Fil (VOCO), X-tra Base (VOCO), Sonic Fill (Kerr), Filtek Bulk Fill (3M-Espe), Xenius (GC) were compared to the two reference materials. The materials were light-cured for 40s in a 2mm×2mm×25mm Teflon mould. Degree of conversion was measured by Raman spectroscopy, Elastic modulus and flexural strength were evaluated by three point bending, surface hardness using Vickers microindentation before and after 24h ethanol storage, and filler weight content by thermogravimetric analysis. The ratio of surface hardness before and after ethanol storage was considered as an evaluation of polymer softening. Data were analyzed by one-way ANOVA and post hoc Tukey's test (p=0.05). The mechanical properties of the bulk-fill composites were mostly lower compared with the conventional high viscosity material, and, at best, comparable to the conventional flowable composite. Linear correlations of the mechanical properties investigated were poor with degree of conversion (0.090.8). Softening in ethanol revealed differences in polymer network density between material types. The reduction of time and improvement of convenience associated with bulk-fill materials is a clear advantage of this particular material class. However, a compromise with mechanical properties compared with more conventional commercially-available nano-hybrid materials was demonstrated by the present work. Given the lower mechanical

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

NASA Astrophysics Data System (ADS)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

Utilization of Tabula Rasa to Stabilize Bulk Lifetimes in n-Cz Silicon for High-Performance Solar Cell Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaSalvia, Vincenzo; Jensen, Mallory Ann; Youssef, Amanda

2016-11-21

We investigate a high temperature, high cooling-rate anneal Tabula Rasa (TR) and report its implications on n-type Czochralski-grown silicon (n-Cz Si) for photovoltaic fabrication. Tabula Rasa aims at dissolving and homogenizing oxygen precipitate nuclei that can grow during the cell process steps and degrade the cell performance due to their high internal gettering and recombination activity. The Tabula Rasa thermal treatment is performed in a clean tube furnace with cooling rates >100 degrees C/s. We characterize the bulk lifetime by Sinton lifetime and photoluminescence mapping just after Tabula Rasa, and after the subsequent cell processing. After TR, the bulk lifetimemore » surprisingly degrades to <; 0.1ms, only to recover to values equal or higher than the initial non-treated wafer (several ms), after typical high temperature cell process steps. Those include boron diffusion and oxidation; phosphorus diffusion/oxidation; ambient annealing at 850 degrees C; and crystallization annealing of tunneling-passivating contacts (doped polycrystalline silicon on 1.5 nm thermal oxide). The drastic lifetime improvement during high temperature cell processing is attributed to improved external gettering of metal impurities and annealing of intrinsic point defects. Time and injection dependent lifetime spectroscopy further reveals the mechanisms of lifetime improvement after Tabula Rasa treatment. Additionally, we report the efficacy of Tabula Rasa on n-type Cz-Si wafers and its dependence on oxygen concentration, correlated to position within the ingot.« less

Iron and zinc isotope fractionation during uptake and translocation in rice (Oryza sativa) grown in oxic and anoxic soils

NASA Astrophysics Data System (ADS)

Arnold, Tim; Markovic, Tamara; Kirk, Guy J. D.; Schönbächler, Maria; Rehkämper, Mark; Zhao, Fangjie J.; Weiss, Dominik J.

2015-11-01

Stable isotope fractionation is emerging quickly as a powerful novel technique to study metal uptake and translocation in plants. Fundamental to this development is a thorough understanding of the processes that lead to isotope fractionation under differing environmental conditions. In this study, we investigated Zn and Fe isotope fractionation in rice grown to maturity in anaerobic and aerobic soils under greenhouse conditions. The overall Zn isotope fractionation between the soil and above ground plant material was negligible in aerobic soil but significant in anaerobic soil with isotopically lighter Zn in the rice plant. The observed range of fractionation is in line with previously determined fractionations of Zn in rice grown in hydroponic solutions and submerged soils and emphasizes the effect of taking up different chemical forms of Zn, most likely free and organically complexed Zn. The Zn in the grain was isotopically lighter than in the rest of the above ground plant in rice grown in aerobic and anaerobic soils alike. This suggests that in the course of the grain loading and during the translocation within the plant important biochemical and/or biophysical processes occur. The isotope fractionation observed in the grains would be consistent with an unidirectional controlled transport from shoot to grain with a fractionation factor of α ≈ 0.9994. Iron isotopes showed an isotopic lighter signature in shoot and grain compared to the bulk soil or the leachate in aerobic and anaerobic soils alike. The negative direction of isotopic fractionation is consistent with possible changes in the redox state of Fe occurring during the uptake and translocation processes. The isotope fractionation pattern between shoots and grain material are different for Zn and Fe which finally suggests that different mechanisms operate during translocation and grain-loading in rice for these two key micronutrients.

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

PubMed

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

An overview of rotating machine systems with high-temperature bulk superconductors

NASA Astrophysics Data System (ADS)

Zhou, Difan; Izumi, Mitsuru; Miki, Motohiro; Felder, Brice; Ida, Tetsuya; Kitano, Masahiro

2012-10-01

The paper contains a review of recent advancements in rotating machines with bulk high-temperature superconductors (HTS). The high critical current density of bulk HTS enables us to design rotating machines with a compact configuration in a practical scheme. The development of an axial-gap-type trapped flux synchronous rotating machine together with the systematic research works at the Tokyo University of Marine Science and Technology since 2001 are briefly introduced. Developments in bulk HTS rotating machines in other research groups are also summarized. The key issues of bulk HTS machines, including material progress of bulk HTS, in situ magnetization, and cooling together with AC loss at low-temperature operation are discussed.

InGaAs Multiple Quantum Well Modulating Retro-reflector for Free Space Optical Communications

DTIC Science & Technology

2002-01-01

PIN optical modulators grown on GaAs substrates by molecular beam epitaxy ,J. Vac Sci. B 18, 1609-16 13 (2000). Peter G. Goetz, W. S. Rabinovich...reflector is then interrogated by a cw laser beam from a conventional optical communications system and returns a modulated signal beam to the...optical communication systems. By mounting an electro-optic shutter in front of the corner- cube, the retro-reflected beam can be turned on or off (or at

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi

Bulk renormalization and particle spectrum in codimension-two brane worlds

NASA Astrophysics Data System (ADS)

Salvio, Alberto

2013-04-01

We study the Casimir energy due to bulk loops of matter fields in codimension-two brane worlds and discuss how effective field theory methods allow us to use this result to renormalize the bulk and brane operators. In the calculation we explicitly sum over the Kaluza-Klein (KK) states with a new convenient method, which is based on a combined use of zeta function and dimensional regularization. Among the general class of models we consider we include a supersymmetric example, 6D gauged chiral supergravity. Although much of our discussion is more general, we treat in some detail a class of compactifications, where the extra dimensions parametrize a rugby ball shaped space with size stabilized by a bulk magnetic flux. The rugby ball geometry requires two branes, which can host the Standard Model fields and carry both tension and magnetic flux (of the bulk gauge field), the leading terms in a derivative expansion. The brane properties have an impact on the KK spectrum and therefore on the Casimir energy as well as on the renormalization of the brane operators. A very interesting feature is that when the two branes carry exactly the same amount of flux, one half of the bulk supersymmetries survives after the compactification, even if the brane tensions are large. We also discuss the implications of these calculations for the natural value of the cosmological constant when the bulk has two large extra dimensions and the bulk supersymmetry is partially preserved (or completely broken).

Solute redistribution and constitutional supercooling effects in vertical Bridgman grown indium gallium antimonide by accelerated crucible rotation technique

NASA Astrophysics Data System (ADS)

Vogel, K. Juliet

The ternary alloy, InxGa1- xSb, is a compound semiconducting material of compositionally tunable bandgap (0.18 - 0.72 eV), making it desirable for use in photovoltaic, photodetector, and other opto-electronic devices in the infra-red regime. In the past, this material has proven to be difficult to synthesize in bulk due to the large phase separation between the constituent binaries. In this work, InxGa1-xSb has been grown in a state-of-the-art, computer-controlled system based on vertical Bridgman technique designed to allow crucible rotation during solidification of the material to reincorporate excess solute and improve material quality. Independent thermocouples allow for in situ monitoring and maintenance of the temperature to 0.2°C precision during crystal growth, reducing compositional inhomogeneities caused by temperature fluctuations. A series of experiments has been performed to evaluate the effect of accelerated crucible rotation technique (ACRT) on the structural quality and compositional homogeneity of bulk-grown InxGa 1-xSb for a starting melt composition of x = 0.25. A lowering rate of 3 mm/hr has been employed, for an overall cooling rate of 5.1°C/hr, which deliberately exceeds the threshold for constitutional supercooling. Scanning electron microscopy (SEM) has been performed on samples of In0.18Ga0.82Sb revealing a 92% percent reduction in micro-cracking with the application of ACRT when compared to synthesis performed without rotation. Furthermore; electron probe microscopy (EPMA) indicates an order of magnitude improvement in compositional homogeneity in the direction of growth with the use of ACRT. Micro-cracking and compositional homogeneity throughout cross-sections of InxGa1-xSb material also indicate areas of improved mixing during solidification, which can be compared to existing models of fluid flow exhibited in ACRT. The boule synthesized with ACRT shows a decrease in compositional deviation of 62% in the first-to-freeze areas of the

7 CFR 58.317 - Bulk butter trucks, boats, texturizers, and packers.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 3 2013-01-01 2013-01-01 false Bulk butter trucks, boats, texturizers, and packers... and Grading Service 1 Equipment and Utensils § 58.317 Bulk butter trucks, boats, texturizers, and packers. Bulk butter trucks, boats, texturizers, and packers shall be constructed of aluminum, stainless...

7 CFR 58.317 - Bulk butter trucks, boats, texturizers, and packers.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 3 2014-01-01 2014-01-01 false Bulk butter trucks, boats, texturizers, and packers... and Grading Service 1 Equipment and Utensils § 58.317 Bulk butter trucks, boats, texturizers, and packers. Bulk butter trucks, boats, texturizers, and packers shall be constructed of aluminum, stainless...

7 CFR 58.317 - Bulk butter trucks, boats, texturizers, and packers.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 3 2011-01-01 2011-01-01 false Bulk butter trucks, boats, texturizers, and packers... and Grading Service 1 Equipment and Utensils § 58.317 Bulk butter trucks, boats, texturizers, and packers. Bulk butter trucks, boats, texturizers, and packers shall be constructed of aluminum, stainless...

7 CFR 58.317 - Bulk butter trucks, boats, texturizers, and packers.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 3 2012-01-01 2012-01-01 false Bulk butter trucks, boats, texturizers, and packers... and Grading Service 1 Equipment and Utensils § 58.317 Bulk butter trucks, boats, texturizers, and packers. Bulk butter trucks, boats, texturizers, and packers shall be constructed of aluminum, stainless...

7 CFR 58.317 - Bulk butter trucks, boats, texturizers, and packers.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 3 2010-01-01 2010-01-01 false Bulk butter trucks, boats, texturizers, and packers... and Grading Service 1 Equipment and Utensils § 58.317 Bulk butter trucks, boats, texturizers, and packers. Bulk butter trucks, boats, texturizers, and packers shall be constructed of aluminum, stainless...

Glycemic index of American-grown jasmine rice classified as high.

PubMed

Truong, Teresa H; Yuet, Wei Cheng; Hall, Micki D

2014-06-01

The primary objective was to determine the glycemic index (GI) of jasmine rice grown in the United States (US). Secondary objective was to compare the GI of US grown jasmine rice to those grown in Thailand. Twelve healthy subjects were served all four brands of jasmine rice and a reference food (glucose), each containing 50 g of available carbohydrate. Fingerstick blood glucose was measured at 0, 15, 30, 45, 60, 90, and 120 min after consumption following a fasting state. The GI was calculated using the standard equation. The GI values for test foods ranged from 96 to 116 and were all classified as high GI foods. No difference in GI was found between American-grown and Thailand-grown jasmine rice. Although not statistically significant, observations show glycemic response among Asian American participants may be different. GI should be considered when planning meals with jasmine rice as the main source carbohydrate.

Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

NASA Astrophysics Data System (ADS)

Machain, P.; Condó, A. M.; Domenichini, P.; Pozo López, G.; Sirena, M.; Correa, V. F.; Haberkorn, N.

2015-08-01

Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni47Mn24Ga29 films grown by sputtering on (0 0 1) MgO using a stoichiometric Ni2MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni2MnGa bulk reference change their chemical composition to Ni49Mn26Ga25. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni-Mn-Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.

Bulk chemical compositions of Antarctic meteorites in the NIPR collection

NASA Astrophysics Data System (ADS)

Kimura, M.; Imae, N.; Yamaguchi, A.; Haramura, H.; Kojima, H.

2018-03-01

Bulk chemical compositions of meteorites were traditionally analyzed by wet chemical analysis, and NIPR has data for 1162 meteorites as of September 2017. We discuss the classification of meteorites on the basis of these data. Chondrite data are distributed in an anomalously wide range of compositions on the Urey-Craig diagram. One of the reasons for such wide distribution is terrestrial weathering producing Fe2O3-bearing phases from Fe-Ni metal and sulfides. Another important factor affecting the bulk compositional data is brecciation. Our observations indicate that many brecciated chondrites contain anomalously abundant opaque minerals, or are depleted in them, resulting in unusual compositions. In case of enstatite and some carbonaceous chondrites, the bulk compositions are distributed in wider ranges than reported before. The bulk compositions of HED meteorites are consistent with their mineralogy and classification. Our study suggests that wet chemical data are still significant for the meteorite classification. However, petrographic observation is indispensable for evaluating the bulk chemistry and classification of meteorites.

Comparison of hydrocarbon yields in cotton from field grown vs. greenhouse grown plants

USDA-ARS?s Scientific Manuscript database

Four accession of cotton (SA-1181, 1403, 1419, and 2269) were grown both in field conditions and a greenhouse to compare the environmental effects on leaf biomass, % yield of hydrocarbons (HC), and total HC (g HC /g leaves) under natural and controlled (protected) conditions. Leaf biomass was simi...

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

A Nanowire-Based Plasmonic Quantum Dot Laser.

PubMed

Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2016-04-13

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

The fertilization ability and developmental competence of bovine oocytes grown in vitro

PubMed Central

MAKITA, Miho; UEDA, Mayuko; MIYANO, Takashi

2016-01-01

In vitro growth culture systems for oocytes are being developed in several mammalian species. In these growth culture systems, in vitro grown oocytes usually have lower blastocyst formation than in vivo grown oocytes after in vitro fertilization. Furthermore, there have been a few reports that investigated the fertilization ability of in vitro grown oocytes in large animals. The purpose of this study was to investigate the fertilization process and developmental competence of bovine oocytes grown in vitro. Oocyte-granulosa cell complexes collected from bovine early antral follicles (0.4−0.7 mm in diameter) were cultured for growth with 17β-estradiol and androstenedione for 14 days and matured in vitro. These oocytes were then inseminated for 6 or 12 h, and further cultured for development up to 8 days in vitro. After growth culture, oocytes grew from 95 µm to around 120 µm and acquired maturation competence (79%). Although fertilization rates of in vitro grown oocytes were low after 6 h of insemination, 34% of in vitro grown oocytes fertilized normally after 12 h of insemination, having two polar bodies and two pronuclei with a sperm tail, and 22% of these oocytes developed into blastocysts after 8 days of culture. The fertilization and blastocyst formation rates were similar to those of in vivo grown oocytes. In addition, blastocyst cell numbers were also similar between in vitro and in vivo grown oocytes. In conclusion, in vitro grown bovine oocytes are similar to in vivo grown oocytes in fertilization ability and can develop into blastocysts. PMID:27151093

The fertilization ability and developmental competence of bovine oocytes grown in vitro.

PubMed

Makita, Miho; Ueda, Mayuko; Miyano, Takashi

2016-08-25

In vitro growth culture systems for oocytes are being developed in several mammalian species. In these growth culture systems, in vitro grown oocytes usually have lower blastocyst formation than in vivo grown oocytes after in vitro fertilization. Furthermore, there have been a few reports that investigated the fertilization ability of in vitro grown oocytes in large animals. The purpose of this study was to investigate the fertilization process and developmental competence of bovine oocytes grown in vitro. Oocyte-granulosa cell complexes collected from bovine early antral follicles (0.4-0.7 mm in diameter) were cultured for growth with 17β-estradiol and androstenedione for 14 days and matured in vitro. These oocytes were then inseminated for 6 or 12 h, and further cultured for development up to 8 days in vitro. After growth culture, oocytes grew from 95 µm to around 120 µm and acquired maturation competence (79%). Although fertilization rates of in vitro grown oocytes were low after 6 h of insemination, 34% of in vitro grown oocytes fertilized normally after 12 h of insemination, having two polar bodies and two pronuclei with a sperm tail, and 22% of these oocytes developed into blastocysts after 8 days of culture. The fertilization and blastocyst formation rates were similar to those of in vivo grown oocytes. In addition, blastocyst cell numbers were also similar between in vitro and in vivo grown oocytes. In conclusion, in vitro grown bovine oocytes are similar to in vivo grown oocytes in fertilization ability and can develop into blastocysts.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Quality and Quantity Evaluations of Shade Grown Forages

Treesearch

K. P. Ladyman; M. S. Kerley; R. L. Kallenbach; H. E. Garrett; J. W. Van Sambeek; N. E. Navarrete-Tindall

2003-01-01

Seven legumes were grown during the summer-fall of 2000, at the Horticulture and Agroforestry Research Center (39? 01 ' N, 92? 46' W) near New Franklin, MO. The forages were grown in 7.5L white pots placed on light-colored gravel either under full sunlight, 45% sunlight, or 20% sunlight created by a shade cloth over a rectangular frame. Drip irrigation was...

Cuspal Deflection of Premolars Restored with Bulk-Fill Composite Resins.

PubMed

Behery, Haytham; El-Mowafy, Omar; El-Badrawy, Wafa; Saleh, Belal; Nabih, Sameh

2016-01-01

This in vitro study compared cuspal deflection of premolars restored with three bulk-fill composite resins to that of incrementally-restored ones with a low-shrinkage silorane-based restorative material. Forty freshly-extracted intact human upper premolars were used. Reference points at buccal and palatal cusp tips were acid-etched and composite rods were horizontally bonded to them (TPH-Spectra-HV, Dentsply). Two acrylic resin guiding paths were made for each premolar to guide beaks of a digital micrometer used for cuspal deflection measurements. Standardized MOD cavities, 3 mm wide bucco-lingually and 3.5 mm deep, were prepared on each premolar. Prepared teeth were then equally divided into four groups (n = 10) and each group was assigned to one of four composite resin (QuiXX, Dentsply; X-tra fil, Voco; Tetric EvoCeram Bulk Fill, Ivoclar Vivadent; low-shrinkage Filtek LS, 3M/ESPE). Adper Single Bond-Plus, 3M/ESPE was used with all bulk-fill restoratives. LS-System Adhesive, 3M/ESPE was used with Filtek LS. For each prepared premolar, cuspal deflection was measured in microns as the difference between two readings between reference points before and after restoration completion. Means and SDs were calculated and data statistically-analyzed using One-way ANOVA and Tukey's test. Filtek LS showed the lowest mean cuspal deflection value 6.4(0.84)μm followed by Tetric EvoCeram Bulk Fill 10.1(1.2) μm and X-tra fil 12.4(1.35)μm, while QuiXX showed the highest mean 13(1.05)μm. ANOVA indicated significant difference among mean values of groups (p < 0.001). Tukey's test indicated no significant difference in mean values between QuiXX and X-tra fil (p = 0.637). Tetric EvoCeram Bulk Fill had significantly lower mean cuspal deflection compared with the two other bulk-fill composite resins tested. Filtek LS had the lowest significant mean cuspal deflection in comparison to all tested bulk-fill restoratives. The use of Tetric EvoCeram Bulk fill composite resin

77 FR 12293 - PCBs Bulk Product v. Remediation Waste

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-29

.... Remediation Waste AGENCY: Environmental Protection Agency (EPA). ACTION: Request for Public Comment. SUMMARY... biphenyl (PCB) disposal regulations regarding PCB bulk product and PCB remediation waste. The proposed... regarding PCB bulk product and PCB remediation waste under regulations promulgated at 40 CFR part 761. The...

History of the "Detector Materials Engineering" Crystal Growth Process for Bulk Hg1- x Cd x Te

NASA Astrophysics Data System (ADS)

Higgins, W. M.; Nelson, D. A.; Roy, R. G.; Murosako, R. P.; Lancaster, R. A.; Tower, J.; Norton, P.

2013-11-01

This paper reviews the history and technology of a bulk Hg1- x Cd x Te crystal growth process that was developed in the early 1980s at Honeywell Electro-Optics Division (presently BAE Systems, Electronic Solutions). The crystal growth process name, DME, was an acronym for the department name: Detector Materials Engineering. This was an accelerated crucible rotation technique (ACRT) vertical traveling heater method growth process. Crystal growth occurred in the pseudobinary Hg1- x Cd x Te system. ACRT mixing allowed the lower-density, higher- x-value Hg1- x Cd x Te growth nutrient in the upper region of the ampoule to replenish the depleted melt and allowed the growth of constant- x-value, higher-density Hg1- x Cd x Te. The material grown by this research and production growth process yielded single crystals that had improved purity, compositional uniformity, precipitate density, and reproducibility in comparison with solid-state recrystallization and other bulk Hg1- x Cd x Te growth techniques. Radial and longitudinal nonuniformities in x-value for Hg1- x Cd x Te were reduced to <0.0008/cm. The net electrically active background impurities did not exceed 1 × 1014 cm-3. Electron mobilities in excess of 1.5 × 106 cm2/V-s were observed at 77 K. Structural defects of less than 104 cm-2 were measured. Te precipitates were not observed. As a result of these material improvements, long-wavelength infrared (LWIR) photoconductive devices fabricated from DME material had highly desired performance characteristics.

Electro-optical modeling of bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Kirchartz, Thomas; Pieters, Bart E.; Taretto, Kurt; Rau, Uwe

2008-11-01

We introduce a model for charge separation in bulk heterojunction solar cells that combines exciton transport to the interface between donor and acceptor phases with the dissociation of the bound electron/hole pair. We implement this model into a standard semiconductor device simulator, thereby creating a convenient method to simulate the optical and electrical characteristics of a bulk heterojunction solar cell with a commercially available program. By taking into account different collection probabilities for the excitons in the polymer and the fullerene, we are able to reproduce absorptance, internal and external quantum efficiency, as well as current/voltage curves of bulk heterojunction solar cells. We further investigate the influence of mobilities of the free excitons as well as the mobilities of the free charge carriers on the performance of bulk heterojunction solar cells. We find that, in general, the highest efficiencies are achieved with the highest mobilities. However, an optimum finite mobility of free charge carriers can result from a large recombination velocity at the contacts. In contrast, Langevin-type of recombination cannot lead to finite optimum mobilities even though this mechanism has a strong dependence on the free carrier mobilities.

Critical soil bulk density for soybean growth in Oxisols

NASA Astrophysics Data System (ADS)

Keisuke Sato, Michel; Veras de Lima, Herdjania; Oliveira, Pedro Daniel de; Rodrigues, Sueli

2015-10-01

The aim of this study was to evaluate the critical soil bulk density from the soil penetration resistance measurements for soybean root growth in Brazilian Amazon Oxisols. The experiment was carried out in a greenhouse using disturbed soil samples collected from the northwest of Para characterized by different texture. The treatments consisted of a range of soil bulk densities for each soil textural class. Three pots were used for soybean growth of and two for the soil penetration resistance curve. From the fitted model, the critical soil bulk density was determined considering the penetration resistance values of 2 and 3 MPa. After sixty days, plants were cut and root length, dry mass of root, and dry mass of shoots were determined. At higher bulk densities, the increase in soil water content decreased the penetration resistance, allowing unrestricted growth of soybean roots. Regardless of soil texture, the penetration resistance of 2 and 3 MPa had a slight effect on root growth in soil moisture at field capacity and a reduction of 50% in the soybean root growth was achieved at critical soil bulk density of 1.82, 1.75, 1.51, and 1.45 Mg m-3 for the sandy loam, sandy clay loam, clayey, and very clayey soil.

Geochemically distinct carbon isotope distributions in Allochromatium vinosum DSM 180T grown photoautotrophically and photoheterotrophically.

PubMed

Tang, T; Mohr, W; Sattin, S R; Rogers, D R; Girguis, P R; Pearson, A

2017-03-01

Anoxygenic, photosynthetic bacteria are common at redox boundaries. They are of interest in microbial ecology and geosciences through their role in linking the carbon, sulfur, and iron cycles, yet much remains unknown about how their flexible carbon metabolism-permitting either autotrophic or heterotrophic growth-is recorded in the bulk sedimentary and lipid biomarker records. Here, we investigated patterns of carbon isotope fractionation in a model photosynthetic sulfur-oxidizing bacterium, Allochromatium vinosum DSM180 T . In one treatment, A. vinosum was grown with CO 2 as the sole carbon source, while in a second treatment, it was grown on acetate. Different intracellular isotope patterns were observed for fatty acids, phytol, individual amino acids, intact proteins, and total RNA between the two experiments. Photoautotrophic CO 2 fixation yielded typical isotopic ordering for the lipid biomarkers: δ 13 C values of phytol > n-alkyl lipids. In contrast, growth on acetate greatly suppressed intracellular isotopic heterogeneity across all molecular classes, except for a marked 13 C-depletion in phytol. This caused isotopic "inversion" in the lipids (δ 13 C values of phytol < n-alkyl lipids). The finding suggests that inverse δ 13 C patterns of n-alkanes and pristane/phytane in the geologic record may be at least in part a signal for photoheterotrophy. In both experimental scenarios, the relative isotope distributions could be predicted from an isotope flux-balance model, demonstrating that microbial carbon metabolisms can be interrogated by combining compound-specific stable isotope analysis with metabolic modeling. Isotopic differences among molecular classes may be a means of fingerprinting microbial carbon metabolism, both in the modern environment and the geologic record. © 2017 John Wiley & Sons Ltd.

Bulk Extractor 1.4 User’s Manual

DTIC Science & Technology

2013-08-01

optimistically decompresses data in ZIP, GZIP, RAR, and Mi- crosoft’s Hibernation files. This has proven useful, for example, in recovering email...command line. Java 7 or above must be installed on the machine for the Bulk Extractor Viewer to run. Instructions on running bulk_extractor from the... Hibernation File Fragments (decompressed and processed, not carved) Subsection 4.6 winprefetch Windows Prefetch files, file fragments (processed

Gifted Children Grown Up.

ERIC Educational Resources Information Center

Freeman, Joan

This book describes the outcomes of a longitudinal study of 210 British children that compared the recognized and the unrecognized gifted with their classmates. It describes what has happened to them and their families as they have grown up in very different circumstances, in poverty or wealth, through many types of schooling and life…

A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.

PubMed

García Núñez, Carlos; Braña, Alejandro F; López, Nair; García, Basilio J

2018-06-13

The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. Vertically aligned GaAs NWs have been extensively grown by Ga-assisted vapor-liquid-solid (VLS) mechanism on Si(111) substrates, and they have been used as building blocks in photovoltaics, optoelectronics, electronics, and so forth. However, the nucleation of parasitic species such as traces and nanocrystals on the Si substrate surface during the NW growth could affect significantly the controlled nucleation of those NWs, and therefore the resulting performance of NW-based devices. Preventing the nucleation of parasitic species on the Si substrate is a matter of interest, because they could act as traps for gaseous precursors and/or chemical elements during VLS growth, drastically reducing the maximum length of grown NWs, affecting their morphology and structure, and reducing the NW density along the Si substrate surface. This work presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. GaAs NWs are grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates using triethylgallium and tertiarybutylarsine precursors by a two-step-based growth method presented here; this method includes a growth interruption for an oxidation on air between both steps of growth, reducing the nucleation of parasitic crystals on the thicker SiO x capping layer during the second and longer growth step. VLS conditions are preserved overtime, resulting in a stable NW growth rate of around 6 μm/h for growth times up to 1 h. Resulting GaAs NWs have a high aspect ratio of 85 and average radius of 35 nm. We also report on the existence of characteristic reflection high

Evaluation of Radiopacity of Bulk-fill Flowable Composites Using Digital Radiography.

PubMed

Tarcin, B; Gumru, B; Peker, S; Ovecoglu, H S

2016-01-01

New flowable composites that may be bulk-filled in layers up to 4 mm are indicated as a base beneath posterior composite restorations. Sufficient radiopacity is one of the several important requirements such materials should meet. The aim of this study was to evaluate the radiopacity of bulk-fill flowable composites and to provide a comparison with conventional flowable composites using digital imaging. Ten standard specimens (5 mm in diameter, 1 mm in thickness) were prepared from each of four different bulk-fill flowable composites and nine different conventional flowable composites. Radiographs of the specimens were taken together with 1-mm-thick tooth slices and an aluminum step wedge using a digital imaging system. For the radiographic exposures, a storage phosphor plate and a dental x-ray unit at 70 kVp and 8 mA were used. The object-to-focus distance was 30 cm, and the exposure time was 0.2 seconds. The gray values of the materials were measured using the histogram function of the software available with the system, and radiopacity was calculated as the equivalent thickness of aluminum. The data were analyzed statistically (p<0.05). All of the tested bulk-fill flowable composites showed significantly higher radiopacity values in comparison with those of enamel, dentin, and most of the conventional flowable composites (p<0.05). Venus Bulk Fill (Heraeus Kulzer) provided the highest radiopacity value, whereas Arabesk Flow (Voco) showed the lowest. The order of the radiopacity values for the bulk-fill flowable composites was as follows: Venus Bulk Fill (Heraeus Kulzer) ≥ X-tra Base (Voco) > SDR (Dentsply DeTrey) ≥ Filtek Bulk Fill (3M ESPE). To conclude, the bulk-fill flowable restorative materials, which were tested in this study using digital radiography, met the minimum standard of radiopacity specified by the International Standards Organization.

Should bulk cloudwater or fogwater samples obey Henry's law?

NASA Astrophysics Data System (ADS)

Pandis, Spyros N.; Seinfeld, John H.

1991-06-01

Mixing of droplets with different pH that are individually in Henry's law equilibrium with the surrounding atmosphere always results in a bulk mixture that is supersaturated with weak acids like S(IV) and HCOOH, and bases like NH3 with respect to the original atmosphere. High supersaturations result only when the pH of the bulk droplet mixture exceeds the pKa of the species, in which pH range large pH differences among droplets of different sizes lead to large deviations from Henry's law for the bulk mixture. The deviation is shown to depend on the ratio of the arithmetic mean to the harmonic mean of the hydrogen ion concentrations of the droplets with the liquid water content used as weighting factor in the calculation of the means. The theory developed can explain observed discrepancies from Henry's law in atmospheric samples and also other observed phenomena like the reported increase of pH values of bulk aqueous samples during storage.

High-Oriented Thermoelectric Nano-Bulk Fabricated from Thermoelectric Ink

NASA Astrophysics Data System (ADS)

Koyano, M.; Mizutani, S.; Hayashi, Y.; Nishino, S.; Miyata, M.; Tanaka, T.; Fukuda, K.

2017-05-01

Printing technology is expected to provide innovative and environmentally friendly processes for thermoelectric (TE) module fabrication. As described in this paper, we propose an orientation control process using plastic deformation at high temperatures and present high-oriented TE nano-bulks fabricated from bismuth telluride (Bi-Te) TE inks using this process. In the case of n-type Bi-Te, surface x-ray diffraction reveals that crystalline grains in the plastic-deformed nano-bulk demonstrate a c-plane orientation parallel to the pressed face. According to the high orientation, electrical resistivity ρ, thermal conductivity κ, and figure of merit ZT show anisotropic behavior. It is noteworthy that ( ZT)// almost reaches unity ( ZT)// ˜1 at 340 K, even at low temperatures of the plastic deformation process. In contrast, the ZT of plastic-deformed p-type nano-bulk indicates isotropic behavior. The difference in the process temperature dependence of ZT suggests that n-type and p-type nano-bulk orientation mechanisms mutually differ.

Relaxation of the bulk modulus in partially molten dunite?

NASA Astrophysics Data System (ADS)

Cline, C. J.; Jackson, I.

2016-11-01

To address the possibility of melt-related bulk modulus relaxation, a forced oscillation experiment was conducted at seismic frequencies on a partially molten synthetic dunite specimen (melt fraction = 0.026) utilizing the enhanced capacity of the Australian National University attenuation apparatus to operate in both torsional and flexural oscillation modes. Shear modulus and dissipation data are consistent with those for melt-bearing olivine specimens previously tested in torsion, with a pronounced dissipation peak superimposed on high-temperature background. Flexural data exhibit a monotonic decrease in complex Young's modulus with increasing temperature under transsolidus temperatures. The observed variation of Young's modulus is well described by the relationship 1/E 1/3G, without requiring relaxation of the bulk modulus. At high homologous temperatures, when shear modulus is low, extensional and flexural oscillation measurements have little resolution of bulk modulus, and thus, only pressure oscillation measurements can definitively constrain bulk properties at these conditions.

Surface Premelting Coupled with Bulk Phase Transitions in Colloidal Crystals

NASA Astrophysics Data System (ADS)

Li, Bo; Wang, Feng; Zhou, Di; Cao, Xin; Peng, Yi; Ni, Ran; Liao, Maijia; Han, Yilong

2015-03-01

Colloids have been used as outstanding model systems for the studies of various phase transitions in bulk, but not at interface yet. Here we obtained equilibrium crystal-vapor interfaces using tunable attractive colloidal spheres and studied the surface premelting at the single-particle level by video microscopy. We found that monolayer crystals exhibit a bulk isostructural solid-solid transition which triggers the surface premelting. The premelting is incomplete due to the interruption of a mechanical-instability-induced bulk melting. By contrast, two- or multilayer crystals do not have the solid-solid transition and the mechanical instability, hence they exhibit complete premelting with divergent surface-liquid thickness. These novel interplays between bulk and surface phase transitions cast new lights for both types of transitions.

Visible and near-infrared bulk optical properties of raw milk.

PubMed

Aernouts, B; Van Beers, R; Watté, R; Huybrechts, T; Lammertyn, J; Saeys, W

2015-10-01

The implementation of optical sensor technology to monitor the milk quality on dairy farms and milk processing plants would support the early detection of altering production processes. Basic visible and near-infrared spectroscopy is already widely used to measure the composition of agricultural and food products. However, to obtain maximal performance, the design of such optical sensors should be optimized with regard to the optical properties of the samples to be measured. Therefore, the aim of this study was to determine the visible and near-infrared bulk absorption coefficient, bulk scattering coefficient, and scattering anisotropy spectra for a diverse set of raw milk samples originating from individual cow milkings, representing the milk variability present on dairy farms. Accordingly, this database of bulk optical properties can be used in future simulation studies to efficiently optimize and validate the design of an optical milk quality sensor. In a next step of the current study, the relation between the obtained bulk optical properties and milk quality properties was analyzed in detail. The bulk absorption coefficient spectra were found to mainly contain information on the water, fat, and casein content, whereas the bulk scattering coefficient spectra were found to be primarily influenced by the quantity and the size of the fat globules. Moreover, a strong positive correlation (r ≥ 0.975) was found between the fat content in raw milk and the measured bulk scattering coefficients in the 1,300 to 1,400 nm wavelength range. Relative to the bulk scattering coefficient, the variability on the scattering anisotropy factor was found to be limited. This is because the milk scattering anisotropy is nearly independent of the fat globule and casein micelle quantity, while it is mainly determined by the size of the fat globules. As this study shows high correlations between the sample's bulk optical properties and the milk composition and fat globule size, a

78 FR 77367 - Almonds Grown in California; Continuance Referendum

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-23

... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 981 [Doc. No. AMS-FV-13-0082; FV14-981-1 CR] Almonds Grown in California; Continuance Referendum AGENCY: Agricultural Marketing... marketing order that regulates the handling of almonds grown in California. DATES: The referendum will be...

Evaluation of bulk heat fluxes from atmospheric datasets

NASA Astrophysics Data System (ADS)

Farmer, Benton

Heat fluxes at the air-sea interface are an important component of the Earth's heat budget. In addition, they are an integral factor in determining the sea surface temperature (SST) evolution of the oceans. Different representations of these fluxes are used in both the atmospheric and oceanic communities for the purpose of heat budget studies and, in particular, for forcing oceanic models. It is currently difficult to quantify the potential impact varying heat flux representations have on the ocean response. In this study, a diagnostic tool is presented that allows for a straightforward comparison of surface heat flux formulations and atmospheric data sets. Two variables, relaxation time (RT) and the apparent temperature (T*), are derived from the linearization of the bulk formulas. They are then calculated to compare three bulk formulae and five atmospheric datasets. Additionally, the linearization is expanded to the second order to compare the amount of residual flux present. It is found that the use of a bulk formula employing a constant heat transfer coefficient produces longer relaxation times and contains a greater amount of residual flux in the higher order terms of the linearization. Depending on the temperature difference, the residual flux remaining in the second order and above terms can reach as much as 40--50% of the total residual on a monthly time scale. This is certainly a non-negligible residual flux. In contrast, a bulk formula using a stability and wind dependent transfer coefficient retains much of the total flux in the first order term, as only a few percent remain in the residual flux. Most of the difference displayed among the bulk formulas stems from the sensitivity to wind speed and the choice of a constant or spatially varying transfer coefficient. Comparing the representation of RT and T* provides insight into the differences among various atmospheric datasets. In particular, the representations of the western boundary current, upwelling

Seedborne fungal contamination: consequences in space-grown wheat

NASA Technical Reports Server (NTRS)

Bishop, D. L.; Levine, H. G.; Kropp, B. R.; Anderson, A. J.; Hood, E. E. (Principal Investigator)

1997-01-01

Plants grown in microgravity are subject to many environmental stresses that may promote microbial growth and result in disease symptoms. Wheat (cv. Super Dwarf) recovered from an 8-day mission aboard a NASA (National Aeronautics and Space Administration) space shuttle showed disease symptoms, including girdling of leaf sheaths and chlorosis and necrosis of leaf and root tissues. A Neotyphodium species was isolated from the seed and leaf sheaths of symptomatic wheat used in the spaceflight mission. Certain isozymes of a peroxidase unique to extracts from the microgravity-grown plants were observed in extracts from earth-grown Neotyphodium-infected plants but were not present in noninfected wheat. The endophytic fungus was eliminated from the wheat seed by prolonged heat treatment at 50 degrees C followed by washes with water at 50 degrees C. Plants from wheat seed infected with the Neotyphodium endophyte were symptomless when grown under greenhouse conditions, whereas symptoms appeared after only 4 days of growth in closed containers. Disease spread from an infected plant to noninfected plants in closed containers. Dispersion via spores was found on asymptomatic plants at distances of 7 to 18 cm from infected plants. The size and shape of the conidia, mycelia, and phialide-bearing structures and the ability to grow rapidly on carbohydrates, especially xylose, resembled the characteristics of N. chilense, which is pathogenic on orchard grass, Doctylis glomerati. The Neotyphodium wheat isolate caused disease symptoms on other cereals (wheat cv. Malcolm, orchard grass, barley, and maize) grown in closed containers.

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Luminescence and Scintillation Properties of Czochralski Grown LYGBO Crystals

NASA Astrophysics Data System (ADS)

Fawad, U.; Kim, Hong Joo; Park, H.; Kim, Sunghwan; Khan, Sajid

2016-06-01

Mixed crystals Li6YxGd1-x(BO3)3:Ce3+ (LYGBO) (where, x = 0.0, 0.2, 0.5, 0.8, 1.0) are grown by using Czochralski method with different proportions of Li6Y(BO3)3 and Li6Gd(BO3)3. All crystals are doped with 3 mole% optimized concentrations of Ce3+ ions. The grown crystals are 20-70 mm in length and 5-10 mm in diameter. Detailed sintering and crystal growth procedure is presented in this study. The required phase of the grown crystals is confirmed by powder X-ray diffraction (XRD) analysis. Ultraviolet (UV) photoluminescence and X-ray induced luminescence of the grown crystals at room temperature are measured. Various scintillation properties such as energy resolution, light yield, α/β ratio and fluorescence decay time under the excitation by 137Cs γ-ray and 241Am particles are also presented.

Dielectric Spectroscopy Study of ZnSe Grown by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Kokan, J.; Gerhardt, R.; Su, Ching-Hua

1997-01-01

The dielectric properties of ZnSe samples grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions. The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.

29 CFR 780.813 - “County where cotton is grown.”

Code of Federal Regulations, 2012 CFR

2012-07-01

... 29 Labor 3 2012-07-01 2012-07-01 false âCounty where cotton is grown.â 780.813 Section 780.813... Employment in Ginning of Cotton and Processing of Sugar Beets, Sugar-Beet Molasses, Sugarcane, or Maple Sap... Cotton Is Grown in Commercial Quantities § 780.813 “County where cotton is grown.” For the exemption to...

29 CFR 780.813 - “County where cotton is grown.”

Code of Federal Regulations, 2014 CFR

2014-07-01

... 29 Labor 3 2014-07-01 2014-07-01 false âCounty where cotton is grown.â 780.813 Section 780.813... Employment in Ginning of Cotton and Processing of Sugar Beets, Sugar-Beet Molasses, Sugarcane, or Maple Sap... Cotton Is Grown in Commercial Quantities § 780.813 “County where cotton is grown.” For the exemption to...

29 CFR 780.813 - “County where cotton is grown.”

Code of Federal Regulations, 2013 CFR

2013-07-01

... 29 Labor 3 2013-07-01 2013-07-01 false âCounty where cotton is grown.â 780.813 Section 780.813... Employment in Ginning of Cotton and Processing of Sugar Beets, Sugar-Beet Molasses, Sugarcane, or Maple Sap... Cotton Is Grown in Commercial Quantities § 780.813 “County where cotton is grown.” For the exemption to...

29 CFR 780.813 - “County where cotton is grown.”

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 3 2010-07-01 2010-07-01 false âCounty where cotton is grown.â 780.813 Section 780.813... Employment in Ginning of Cotton and Processing of Sugar Beets, Sugar-Beet Molasses, Sugarcane, or Maple Sap... Cotton Is Grown in Commercial Quantities § 780.813 “County where cotton is grown.” For the exemption to...

29 CFR 780.813 - “County where cotton is grown.”

Code of Federal Regulations, 2011 CFR

2011-07-01

... 29 Labor 3 2011-07-01 2011-07-01 false âCounty where cotton is grown.â 780.813 Section 780.813... Employment in Ginning of Cotton and Processing of Sugar Beets, Sugar-Beet Molasses, Sugarcane, or Maple Sap... Cotton Is Grown in Commercial Quantities § 780.813 “County where cotton is grown.” For the exemption to...

Law Enforcement Efforts to Control Domestically Grown Marijuana.

DTIC Science & Technology

1984-05-25

mari- juana grown indoors , the involvement of large criminal organizations, and the patterns of domestic marijuana distribution. In response to a GAO...information is particularly important if the amount of marijuana grown indoors and the number of large-scale cultiva- tion and distribution organizations... marijuana indoors is becoming increasingly popular. A 1982 narcotics assessment by the Western States Information Network (WSIN)2 of marijuana

Growth and photosynthetic responses of wheat plants grown in space

NASA Technical Reports Server (NTRS)

Tripathy, B. C.; Brown, C. S.; Levine, H. G.; Krikorian, A. D.

1996-01-01

Growth and photosynthesis of wheat (Triticum aestivum L. cv Super Dwarf) plants grown onboard the space shuttle Discovery for 10 d were examined. Compared to ground control plants, the shoot fresh weight of space-grown seedlings decreased by 25%. Postflight measurements of the O2 evolution/photosynthetic photon flux density response curves of leaf samples revealed that the CO2-saturated photosynthetic rate at saturating light intensities in space-grown plants declined 25% relative to the rate in ground control plants. The relative quantum yield of CO2-saturated photosynthetic O2 evolution measured at limiting light intensities was not significantly affected. In space-grown plants, the light compensation point of the leaves increased by 33%, which likely was due to an increase (27%) in leaf dark-respiration rates. Related experiments with thylakoids isolated from space-grown plants showed that the light-saturated photosynthetic electron transport rate from H2O through photosystems II and I was reduced by 28%. These results demonstrate that photosynthetic functions are affected by the microgravity environment.

Near-infrared bulk optical properties of goat wound tissue and human serum: consequences for an implantable optical glucose sensor.

PubMed

Aernouts, Ben; Sharma, Sandeep; Gellynck, Karolien; Vlaminck, Lieven; Cornelissen, Maria; Saeys, Wouter

2016-10-01

Near-infrared (NIR) spectroscopy offers a promising technological platform for continuous glucose monitoring in the human body. Moreover, these measurements could be performed in vivo with an implantable single-chip based optical sensor. However, a thin tissue layer may grow in the optical path of the sensor. As most biological tissues are highly scattering, they only allow a small fraction of the collimated light to pass, significantly reducing the light throughput. To quantify the effect of a thin tissue layer in the optical path, the bulk optical properties of serum and tissue samples grown on implanted dummy sensors were characterized using double integrating sphere and unscattered transmittance measurements. The estimated bulk optical properties were then used to calculate the light attenuation through a thin tissue layer. The combination band of glucose was found to be the better option, relative to the first overtone band, as the absorptivity of glucose molecules is higher, while the reduction in unscattered transmittance due to tissue growth is less. Additionally, as the wound tissue was found to be highly scattering, the unscattered transmittance of the tissue layer is expected to be very low. Therefore, a sensor configuration which measures the diffuse transmittance and/or reflectance instead was recommended. (a) Dummy sensor; (b) explanted dummy sensor in tissue lump; (c) removal of dummy sensor from tissue lump; and (d) 900 µm slices of tissue lump. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Exploring the bulk in AdS /CFT : A covariant approach

NASA Astrophysics Data System (ADS)

Engelhardt, Netta

2017-03-01

I propose a general, covariant way of defining when one region is "deeper in the bulk" than another. This definition is formulated outside of an event horizon (or in the absence thereof) in generic geometries; it may be applied to both points and surfaces, and it may be used to compare the depth of bulk points or surfaces relative to a particular boundary subregion or relative to the entire boundary. Using the recently proposed "light-cone cut" formalism, the comparative depth between two bulk points can be determined from the singularity structure of Lorentzian correlators in the dual field theory. I prove that, by this definition, causal wedges of progressively larger regions probe monotonically deeper in the bulk. The definition furthermore matches expectations in pure AdS and in static AdS black holes with isotropic spatial slices, where a well-defined holographic coordinate exists. In terms of holographic renormalization group flow, this new definition of bulk depth makes contact with coarse graining over both large distances and long time scales.

Quantification of confocal images of biofilms grown on irregular surfaces

PubMed Central

Ross, Stacy Sommerfeld; Tu, Mai Han; Falsetta, Megan L.; Ketterer, Margaret R.; Kiedrowski, Megan R.; Horswill, Alexander R.; Apicella, Michael A.; Reinhardt, Joseph M.; Fiegel, Jennifer

2014-01-01

Bacterial biofilms grow on many types of surfaces, including flat surfaces such as glass and metal and irregular surfaces such as rocks, biological tissues and polymers. While laser scanning confocal microscopy can provide high-resolution images of biofilms grown on any surface, quantification of biofilm-associated bacteria is currently limited to bacteria grown on flat surfaces. This can limit researchers studying irregular surfaces to qualitative analysis or quantification of only the total bacteria in an image. In this work, we introduce a new algorithm called modified connected volume filtration (MCVF) to quantify bacteria grown on top of an irregular surface that is fluorescently labeled or reflective. Using the MCVF algorithm, two new quantification parameters are introduced. The modified substratum coverage parameter enables quantification of the connected-biofilm bacteria on top of the surface and on the imaging substratum. The utility of MCVF and the modified substratum coverage parameter were shown with Pseudomonas aeruginosa and Staphylococcus aureus biofilms grown on human airway epithelial cells. A second parameter, the percent association, provides quantified data on the colocalization of the bacteria with a labeled component, including bacteria within a labeled tissue. The utility of quantifying the bacteria associated with the cell cytoplasm was demonstrated with Neisseria gonorrhoeae biofilms grown on cervical epithelial cells. This algorithm provides more flexibility and quantitative ability to researchers studying biofilms grown on a variety of irregular substrata. PMID:24632515

Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

DOE PAGES

Pino, M.; Tsvelik, A.; Ioffe, L. B.

2015-11-06

In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

Tailoring Magnetic Properties in Bulk Nanostructured Solids

NASA Astrophysics Data System (ADS)

Morales, Jason Rolando

Important magnetic properties and behaviors such as coercivity, remanence, susceptibility, energy product, and exchange coupling can be tailored by controlling the grain size, composition, and density of bulk magnetic materials. At nanometric length scales the grain size plays an increasingly important role since magnetic domain behavior and grain boundary concentration determine bulk magnetic behavior. This has spurred a significant amount of work devoted to developing magnetic materials with nanometric features (thickness, grain/crystallite size, inclusions or shells) in 0D (powder), 1D (wires), and 2D (thin films) materials. Large 3D nanocrystalline materials are more suitable for many applications such as permanent magnets, magneto-optical Faraday isolators etc. Yet there are relatively few successful demonstrations of 3D magnetic materials with nanoscale influenced properties available in the literature. Making dense 3D bulk materials with magnetic nanocrystalline microstructures is a challenge because many traditional densification techniques (HIP, pressureless sintering, etc.) move the microstructure out of the "nano" regime during densification. This dissertation shows that the Current Activated Pressure Assisted Densification (CAPAD) method, also known as spark plasma sintering, can be used to create dense, bulk, magnetic, nanocrystalline solids with varied compositions suited to fit many applications. The results of my research will first show important implications for the use of CAPAD for the production of exchange-coupled nanocomposite magnets. Decreases in grain size were shown to have a significant role in increasing the magnitude of exchange bias. Second, preferentially ordered bulk magnetic materials were produced with highly anisotropic material properties. The ordered microstructure resulted in changing magnetic property magnitudes (ex. change in coercivity by almost 10x) depending on the relative orientation (0° vs. 90°) of an externally

The role of bulk viscosity on the decay of compressible, homogeneous, isotropic turbulence

NASA Astrophysics Data System (ADS)

Johnsen, Eric; Pan, Shaowu

2016-11-01

The practice of neglecting bulk viscosity in studies of compressible turbulence is widespread. While exact for monatomic gases and unlikely to strongly affect the dynamics of fluids whose bulk-to-shear viscosity ratio is small and/or of weakly compressible turbulence, this assumption is not justifiable for compressible, turbulent flows of gases whose bulk viscosity is orders of magnitude larger than their shear viscosities (e.g., CO2). To understand the mechanisms by which bulk viscosity and the associated phenomena affect compressible turbulence, we conduct DNS of freely decaying compressible, homogeneous, isotropic turbulence for ratios of bulk-to-shear viscosity ranging from 0-1000. Our simulations demonstrate that bulk viscosity increases the decay rate of turbulent kinetic energy; while enstrophy exhibits little sensitivity to bulk viscosity, dilatation is reduced by an order of magnitude within the two eddy turnover time. Via a Helmholtz decomposition of the flow, we determined that bulk viscosity damps the dilatational velocity and reduces dilatational-solenoidal exchanges, as well as pressure-dilatation coupling. In short, bulk viscosity renders compressible turbulence incompressible by reducing energy transfer between translational and internal modes.

Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Muret, P.; Pernot, J.; Azize, M.; Bougrioua, Z.

2007-09-01

Electrical transport and deep levels are investigated in GaN:Fe layers epitaxially grown on sapphire by low pressure metalorganic vapor phase epitaxy. Photoinduced current transient spectroscopy and current detected deep level spectroscopy are performed between 200 and 650 K on three Fe-doped samples and an undoped sample. A detailed study of the detected deep levels assigns dominant centers to a deep donor 1.39 eV below the conduction band edge EC and to a deep acceptor 0.75 eV above the valence band edge EV at low electric field. A strong Poole-Frenkel effect is evidenced for the donor. Schottky diodes characteristics and transport properties in the bulk GaN:Fe layer containing a homogenous concentration of 1019 Fe/cm3 are typical of a compensated semiconductor. They both indicate that the bulk Fermi level is located typically 1.4 eV below EC, in agreement with the neutrality equation and dominance of the deep donor concentration. This set of results demonstrates unambiguously that electrical transport in GaN:Fe is governed by both types, either donor or acceptor, of the iron impurity, either substitutional in gallium sites or associated with other defects.

Process audits versus product quality monitoring of bulk milk.

PubMed

Velthuis, A G J; van Asseldonk, M A P M

2011-01-01

Assessment of milk quality is based on bulk milk testing and farm certification on process quality audits. It is unknown to what extent dairy farm audits improve milk quality. A statistical analysis was conducted to quantify possible associations between bulk milk testing and dairy farm audits. The analysis comprised 64.373 audit outcomes on 26,953 dairy farms, which were merged with all conducted laboratory tests of bulk milk samples 12 mo before the audit. Each farm audit record included 271 binary checklist items and 52 attention point variables (given to farmers if serious deviations were observed), both indicating possible deviations from the desired farm situation. Test results included somatic cell count (SCC), total bacterial count (TBC), antimicrobial drug residues (ADR), level of butyric acid spores (BAB), freezing point depression (FPD), level of free fatty acid (FFA), and milk sediment (SED). Results show that numerous audit variables were related to bulk milk test results, although the goodness of fit of the models was generally low. Cow hygiene, clean cubicles, hygiene of milking parlor, and utility room were positively correlated with superior product quality, mainly with respect to SCC, TBC, BAB, FPD, FFA, and SED. Animal health or veterinary drugs management (i.e., drug treatment recording, marking of treated animals, and storage of veterinary drugs) related to SCC, FPD, FFA, and SED. The availability of drinking water was related to TBC, BAB, FFA, and SED, whereas maintenance of the milking equipment was related mainly to SCC, FPD, and FFA. In summary, bulk milk quality and farm audit outcomes are, to some degree, associated: if dairy farms are assessed negatively on specific audit aspects, the bulk milk quality is more likely to be inferior. However, the proportion of the total variance in milk test results explained by audits ranged between 4 and 13% (depending on the specific bulk milk test), showing that auditing dairy farms provides

Selenium in pollen gathered by bees foraging on fly ash-grown plants

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Jong, D.; Morse, R.A.; Gutenmann, W.H.

1977-10-01

Fly ash is the material collected in the stacks of coal burning electric power-generating plants by electrostatic precipitators. About 26 million metric tons of fly ash was estimated to have been produced in 1975 (BRACKETT, 1970). Aside from a small percentage of the material which is used as a base material for roads and in concrete, the bulk of it is deposited in landfills. It was first reported by Gutenmann et al. (1976) that sweet clover, found voluntarily growing on a fly ash landfill site, contained up to 200 ppM of selenium. Fly ashes from 21 states were found tomore » contain the element. Cabbage grown on each of these fly ashes added (7 percent w/w) to soil was shown to absorb selenium in proportion to its concentration in the particular ash (GUTENMANN et al., 1976). The percentage of fly ash in soil was also shown to dictate the extent of selenium absorption by a variety of plants (FURR et al., 1976). In the work reported, pollen collected by honey bees foraging on plants growing on a fly ash landfill was analyzed for selenium and compared with that collected by bees from the same plants growing on soil.« less

1. Bulk fuel tanks and pump station. East side of ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

1. Bulk fuel tanks and pump station. East side of tanks. View to northwest. - Conrad Refining Company Oil Refinery, Bulk Tanks & Pump Station, 90 feet northeast of Office & Warehouse Building, Conrad, Pondera County, MT

3. Bulk fuel tanks and pump station. West side of ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. Bulk fuel tanks and pump station. West side of tanks. View to southeast. - Conrad Refining Company Oil Refinery, Bulk Tanks & Pump Station, 90 feet northeast of Office & Warehouse Building, Conrad, Pondera County, MT

2. Bulk fuel tanks and pump station. North side of ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. Bulk fuel tanks and pump station. North side of tanks. View to southwest. - Conrad Refining Company Oil Refinery, Bulk Tanks & Pump Station, 90 feet northeast of Office & Warehouse Building, Conrad, Pondera County, MT

Site preparation effects on soil bulk density and pine seedling growth

Treesearch

John J. Stransky

1981-01-01

Soil bulk density was sampled the first and third growing seasons after site preparation and pine planting on three clearcut pine-hardwood forest sites in eastern Texas. Bulk density was measured 10 cm below the surface of mineral soil using a surface moisture-density probe. Plots that had been KG-bladed and chopped had significanlty higher bulk density than those that...

Bulk viscous quintessential inflation

NASA Astrophysics Data System (ADS)

Haro, Jaume; Pan, Supriya

In a spatially-flat Friedmann-Lemaître-Robertson-Walker universe, the incorporation of bulk viscous process in general relativity leads to an appearance of a nonsingular background of the universe that both at early and late times depicts an accelerated universe. These early and late scenarios of the universe can be analytically calculated and mimicked, in the context of general relativity, by a single scalar field whose potential could also be obtained analytically where the early inflationary phase is described by a one-dimensional Higgs potential and the current acceleration is realized by an exponential potential. We show that the early inflationary universe leads to a power spectrum of the cosmological perturbations which match with current observational data, and after leaving the inflationary phase, the universe suffers a phase transition needed to explain the reheating of the universe via gravitational particle production. Furthermore, we find that at late times, the universe enters into the de Sitter phase that can explain the current cosmic acceleration. Finally, we also find that such bulk viscous-dominated universe attains the thermodynamical equilibrium, but in an asymptotic manner.

4. Bulk fuel tanks and pump station. Detail of a ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. Bulk fuel tanks and pump station. Detail of a vertical tank. View to southeast. - Conrad Refining Company Oil Refinery, Bulk Tanks & Pump Station, 90 feet northeast of Office & Warehouse Building, Conrad, Pondera County, MT

Promising Thermoelectric Bulk Materials with 2D Structures.

PubMed

Zhou, Yiming; Zhao, Li-Dong

2017-12-01

Given that more than two thirds of all energy is lost, mostly as waste heat, in utilization processes worldwide, thermoelectric materials, which can directly convert waste heat to electricity, provide an alternative option for optimizing energy utilization processes. After the prediction that superlattices may show high thermoelectric performance, various methods based on quantum effects and superlattice theory have been adopted to analyze bulk materials, leading to the rapid development of thermoelectric materials. Bulk materials with two-dimensional (2D) structures show outstanding properties, and their high performance originates from both their low thermal conductivity and high Seebeck coefficient due to their strong anisotropic features. Here, the advantages of superlattices for enhancing the thermoelectric performance, the transport mechanism in bulk materials with 2D structures, and optimization methods are discussed. The phenomenological transport mechanism in these materials indicates that thermal conductivities are reduced in 2D materials with intrinsically short mean free paths. Recent progress in the transport mechanisms of Bi 2 Te 3 -, SnSe-, and BiCuSeO-based systems is summarized. Finally, possible research directions to enhance the thermoelectric performance of bulk materials with 2D structures are briefly considered. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bulk assembly of organic metal halide nanotubes

DOE PAGES

Lin, Haoran; Zhou, Chenkun; Tian, Yu; ...

2017-10-16

The organic metal halide hybrids welcome a new member with a one-dimensional (1D) tubular structure. Herein we report the synthesis and characterization of a single crystalline bulk assembly of organic metal halide nanotubes, (C 6H 13N 4) 3Pb 2Br 7. In a metal halide nanotube, six face-sharing metal halide dimers (Pb 2Br 9 5–) connect at the corners to form rings that extend in one dimension, of which the inside and outside surfaces are coated with protonated hexamethylenetetramine (HMTA) cations (C 6H 13N 4 +). This unique 1D tubular structure possesses highly localized electronic states with strong quantum confinement, resultingmore » in the formation of self-trapped excitons that give strongly Stokes shifted broadband yellowish-white emission with a photoluminescence quantum efficiency (PLQE) of ~7%. Finally, having realized single crystalline bulk assemblies of two-dimensional (2D) wells, 1D wires, and now 1D tubes using organic metal halide hybrids, our work significantly advances the research on bulk assemblies of quantum-confined materials.« less

Effect of layer thickness on the elution of bulk-fill composite components.

PubMed

Rothmund, Lena; Reichl, Franz-Xaver; Hickel, Reinhard; Styllou, Panorea; Styllou, Marianthi; Kehe, Kai; Yang, Yang; Högg, Christof

2017-01-01

An increment layering technique in a thickness of 2mm or less has been the standard to sufficiently convert (co)monomers. Bulk fill resin composites were developed to accelerate the restoration process by enabling up to 4mm thick increments to be cured in a single step. The aim of the present study is to investigate the effect of layer thickness on the elution of components from bulk fill composites. The composites ELS Bulk fill, SDR Bulk fill and Venus Bulkfill were polymerized according to the instruction of the manufacturers. For each composite three groups with four samples each (n=4) were prepared: (1) samples with a layer thickness of 2mm; (2) samples with a layer thickness of 4mm and (3) samples with a layer thickness of 6mm. The samples were eluted in methanol and water for 24h and 7 d. The eluates were analyzed by gas chromatography/mass spectrometry (GC/MS). A total of 11 different elutable substances have been identified from the investigated composites. Following methacrylates showed an increase of elution at a higher layer thickness: TEGDMA (SDR Bulk fill, Venus Bulk fill), EGDMA (Venus Bulk fill). There was no significant difference in the elution of HEMA regarding the layer thickness. The highest concentration of TEGDMA was 146μg/mL for SDR Bulk fill at a layer thickness of 6mm after 7 d in water. The highest HEMA concentration measured at 108μg/mL was detected in the methanol eluate of Venus Bulk fill after 7 d with a layer thickness of 6mm. A layer thickness of 4mm or more can lead to an increased elution of some bulk fill components, compared to the elution at a layer thickness of 2mm. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

A new system for sodium flux growth of bulk GaN. Part I: System development

NASA Astrophysics Data System (ADS)

Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.

2016-12-01

Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.

Formation and Stability of Bulk Nanobubbles Generated by Ethanol-Water Exchange.

PubMed

Qiu, Jie; Zou, Zhenglei; Wang, Shuo; Wang, Xingya; Wang, Lei; Dong, Yaming; Zhao, Hongwei; Zhang, Lijuan; Hu, Jun

2017-05-19

Bulk nanobubbles have unique properties and find potential applications in many important processes. However, their stability or long lifetime still needs to be understood and has attracted much attention from researchers. Bulk nanobubbles are generated based on ethanol-water exchange, a method that is generally used in the study of surface nanobubbles. Their formation and stability is further studied by using a new type of dynamic light scattering known as NanoSight. The results show that the concentration of the bulk nanobubbles produced by this method is about five times greater than that in the degassed group, which indicates the existence of bulk gas nanobubbles. The effects of ethanol/water ratios and temperature on the stability of the bulk nanobubbles have also been studied and their numbers reach a maximum at a ratio of about 1:10 (v/v). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Human Resource Management in Dry-Bulk Shipping

NASA Astrophysics Data System (ADS)

Konstantopoulos, Nikolaos; Alexopoulos, Aristotelis B.

2007-12-01

This article investigates some positions and human resource management practices in dry-bulk shipping. The particularity of the human resource management field, as well as the crews' nationality change that has occurred over the last years, underpin the configuration of the hypothesis of this present research. The results demonstrate that the Greek dry-bulk shipping is going through a transition phase regarding the sector of the ships' human resource management by the captains.

Bulk locality and boundary creating operators

DOE PAGES

Nakayama, Yu; Ooguri, Hirosi

2015-10-19

Here, we formulate a minimum requirement for CFT operators to be localized in the dual AdS. In any spacetime dimensions, we show that a general solution to the requirement is a linear superposition of operators creating spherical boundaries in CFT, with the dilatation by the imaginary unit from their centers. This generalizes the recent proposal by Miyaji et al. for bulk local operators in the three dimensional AdS. We show that Ishibashi states for the global conformal symmetry in any dimensions and with the imaginary di-latation obey free field equations in AdS and that incorporating bulk interactions require their superpositions.more » We also comment on the recent proposals by Kabat et al., and by H. Verlinde.« less

7 CFR 989.157 - Raisins produced from grapes grown outside of California.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 8 2013-01-01 2013-01-01 false Raisins produced from grapes grown outside of... AGRICULTURE RAISINS PRODUCED FROM GRAPES GROWN IN CALIFORNIA Administrative Rules and Regulations Quality Control § 989.157 Raisins produced from grapes grown outside of California. (a) Any raisins produced from...