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Sample records for grown nio thin

  1. Chemical and Magnetic Properties of NiO Thin Films Epitaxially Grown on Fe(001)

    NASA Astrophysics Data System (ADS)

    Brambilla, Alberto

    2008-01-01

    Very high quality NiO films have been grown on Fe(001) by means of Molecular Beam Epitaxy. The chemical and magnetic properties of the NiO/Fe(001) interface have been evaluated by means of X-ray Absorption Spectroscopy and X-ray Magnetic Circular Dichroism. Furthermore, combined use of X-ray Magnetic Linear Dichroism and PhotoElectron Emission Microscopy allowed to observe an in-plane uniaxial magnetic anisotropy in very thin NiO films. For NiO films thinner than about 9 atomic layers the NiO magnetic moments align in-plane perpendicular to the Fe substrate magnetization. Above such critical thickness the coupling turns out to be collinear. The effects of thermal treatments, fundamental to produce exchange-biased structures, have also been considered.

  2. Continuous spin reorientation transition in epitaxially grown antiferromagnetic NiO thin films

    SciTech Connect

    Li, J.; Arenholz, E.; Meng, Y.; Tan, A.; Park, J.; Jin, E.; Son, H.; Wu, J.; Jenkins, C. A.; Scholl, A.; Hwang, Chanyong; Qiu, Z. Q.

    2011-03-01

    Fe/NiO/MgO/Ag(001) films were grown epitaxially, and the Fe and NiO spin orientations were determined using x-ray magnetic dichroism. We find that the NiO spins are aligned perpendicularly to the in-plane Fe spins. Analyzing both the in-plane and out-of-plane spin components of the NiO layer, we demonstrate unambiguously that the antiferromagnetic NiO spins undergo a continuous spin reorientation transition from the in-plane to out-of-plane directions with increasing of the MgO thickness.

  3. Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Roffi, Teuku Muhammad; Nozaki, Shinji; Uchida, Kazuo

    2016-10-01

    Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O2/Ni) ratio, and the type of substrate material. Effects of the growth parameters on the structural and electrical properties of the films were investigated. X-ray diffraction analysis revealed that the crystal structure and quality were strongly affected by the growth temperature and the type of substrate material. At an optimized growth temperature, single-crystalline NiO films were grown on MgO(100) and MgO(111) substrates in a cube-on-cube orientation relationship, while on an Al2O3(001) substrate, the film was grown in the NiO[111] direction. The use of MgO substrates successfully suppressed the formation of twin defects, which have been frequently reported in the growth of NiO. The difference in the formation of the twin defects on MgO and Al2O3 substrates was discussed. It was observed that the resistivity dependence on crystal quality was affected by the choice of substrate material. The effects of the precursor ratio on the transmittance and resistivity of the films were also investigated. Improved transparency in the visible wavelength region and higher conductivity were found in films grown with higher O2/Ni ratios.

  4. Surface electronic structure of polar NiO thin film grown on Ag(111)

    SciTech Connect

    Das, Jayanta; Menon, Krishnakumar S. R.

    2015-06-24

    The growth and structure of NiO thin films on top of Ag(111) substrate were studied where the formation of faceted surface was confirmed by Low Energy Electron Diffraction. The electronic structure of polar NiO(111) surface has been probed using photoemission techniques. The core energy levels and the valence band electronic structure were excited by x-ray and ultraviolet photons respectively. The modifications in physical structure and valence band electronic structure of the film under vacuum annealing have also been enlightened.

  5. An analysis of the x-ray linear dichroism spectrum for NiO thin films grown on vicinal Ag(001)

    SciTech Connect

    Wu, Y.Z.; Zhao, Y.; Arenholz, E.; Young, A.T.; Sinkovic, B.; Qiu, Z.Q.

    2008-05-10

    Antiferromagnetic (AFM) NiO thin films are grown epitaxially on vicinal Ag(118) substrate and investigated by x-ray linear dichroism (XLD). We find that the NiO AFM spin exhibits an in-plane spin reorientation transition from parallel to perpendicular to the step edges with increasing the NiO film thickness. In addition to the conventional L{sub 2} adsorption edge, x-ray linear dichroism (XLD) effect at the Ni L{sub 3} adsorption edge is also measured and analyzed. The result identifies a small energy shift of the L{sub 3} peak. Temperature-dependent measurement confirms that the observed XLD effect in this system at the normal incidence of the x-rays originates entirely from the NiO magnetic ordering.

  6. Properties of NiO thin films deposited by intermittent spray pyrolysis process

    NASA Astrophysics Data System (ADS)

    Reguig, B. A.; Khelil, A.; Cattin, L.; Morsli, M.; Bernède, J. C.

    2007-02-01

    NiO thin films have been grown on glass substrates by intermittent spray pyrolysis deposition of NiCl 2·6H 2O diluted in distilled water, using a simple "perfume atomizer". The effect of the solution molarity on their properties was studied and compared to those of NiO thin films deposited with a classical spray system. It is shown that NiO thin films crystallized in the NiO structure are achieved after deposition. Whatever the precursor molarity, the grain size is around 25-30 nm. The crystallites are preferentially oriented along the (1 1 1) direction. All the films are p-type. However, the thickness and the conductivity of the NiO films depend on the precursor contraction. By comparison with the properties of films deposited by classical spray technique, it is shown that the critical precursor concentration, which induces strong thin films properties perturbations, is higher when a perfume atomizer is used. This broader stability domain can be attributed to better chlorides decomposition during the rest time used in the perfume atomizer technique.

  7. Electrochromic NiO thin films prepared by spin coating

    NASA Astrophysics Data System (ADS)

    Özütok, F.; Demiri, S.; Özbek, E.

    2017-02-01

    Recently, smart windows are very important because they are often being used in smart buildings and car glasses (windows). At this point, producing effective electrochromic materials is so necessary. In this study, we produced NiO thin films by using spin coating technique on In-doped SnO2 (ITO) substrate. Nickel proportions of these nickel oxide (NiO) films are 3, 5 and 7 %. Nickel acetate tetrahydrate is the initial solution and solvents are ethylene gl ycol and n-hexzane. Structural properties and surface images are investigated by using x-ray diffactometer (XRD) and scanning electron microscope (SEM) device, respectively. In addition, electrochemical behavior is investigated by cyclic voltammetry. A correlation between surface morphology and electrochromic performance was observed as well.

  8. Evolution of Crystallinity and Texturing on 120 MeV Au Ion Irradiation on NiO Thin Films

    SciTech Connect

    Mallick, P.; Rath, Chandana; Agarwal, D. C.; Avasthi, D. K.; Kanjilal, D.; Biswal, R.; Mishra, N. C.; Behera, D.; Satyam, P. V.

    2008-10-23

    NiO thin films grown on Si(100) substrate by electron beam evaporation and sintered at 500 deg. C and 700 deg. C were irradiated with 120 MeV {sup 197}Au{sup 9+} ions. The FCC structure of the sintered films was retained up to the highest fluence (3 x l0{sup 13} ions.cm{sup -2}) of irradiation. As against the expected amorphization due to ion irradiation when electronic energy loss exceeds certain threshold value, we observe an improvement of crystallinity and grain orientation at certain fluences of irradiation.

  9. Characterization of crystalline structure and morphology of NiO thin films.

    PubMed

    Shin, Hyemin; Choi, Soo-Bin; Yu, Chung-Jong; Kim, Jae-Yong

    2011-05-01

    We investigated the relation of sputtering powers with structural and morphological properties of nickel oxide (NiO) thin films. NiO thin films were fabricated by using an rf-reactive sputtering method on Si(100) substrates with a Ni target in a partial pressure of oxygen and argon. The films were deposited by various rf-sputtering powers from 100 to 200 W at room temperature. The phases and crystalline structures of the deposited films were investigated by using grazing incident X-ray diffraction (XRD). The thickness and surface morphology of the films were investigated by using a field emission-scanning electron microscopy (FE-SEM). The different sputtering conditions drastically affected the crystallinity and the surface morphology of NiO thin films. A combined analysis of the data obtained from X-ray diffraction and SEM images demonstrates that the preferred orientation of NiO films tends to grow from (111) to (200) direction as increasing the sputtering power, which can be explained by in terms of the surface energy along the indexing plane in an fcc structure. As increasing the rf power, lattice constants decreased from 4.26 to 4.20 angstroms and samples became high-quality crystals. Under our experimental condition, NiO films prepared at 150 W with 20% partial pressure of oxygen and 7 cm distance from the sample to the target show the best quality of the crystal.

  10. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    NASA Astrophysics Data System (ADS)

    Cattin, L.; Reguig, B. A.; Khelil, A.; Morsli, M.; Benchouk, K.; Bernède, J. C.

    2008-07-01

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl 2·6H 2O), nickel nitrate hexahydrate (Ni(NO 3) 2·6H 2O), nickel hydroxide hexahydrate (Ni(OH) 2·6H 2O), nickel sulfate tetrahydrate (NiSO 4·4H 2O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl 2 and Ni(NO 3) 2 precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10 -2 Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  11. Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)

    SciTech Connect

    Warren, Oden L.

    1993-07-01

    This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1x1) and (1x2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

  12. Structural, optical and photo-catalytic activity of nanocrystalline NiO thin films

    SciTech Connect

    Al-Ghamdi, Attieh A.; Abdel-wahab, M. Sh.; Farghali, A.A.; Hasan, P.M.Z.

    2016-03-15

    Highlights: • Synthesis of nanocrystalline NiO thin films with different thicknesses using DC magnetron sputtering technique. • Effect of film thickness and particle size on photo-catalytic degradation of methyl green dye under UV light was studied. • The deposited NiO thin films are efficient, stable and possess high photo-catalytic activity upon reuse. - Abstract: Physical deposition of nanocrystalline nickel oxide (NiO) thin films with different thickness 30, 50 and 80 nm have been done on glass substrate by DC magnetron sputtering technique and varying the deposition time from 600, 900 to 1200 s. The results of surface morphology and optical characterization of these films obtained using different characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), photoluminescence (PL) and UV–vis spectrophotometry provide important information like formation of distinct nanostructures in different films and its effect on their optical band gap which has decreased from 3.74 to 3.37 eV as the film thickness increases. Most importantly these films have shown very high stability and a specialty to be recycled without much loss of their photo-catalytic activity, when tested as photo-catalysts for the degradation of methyl green dye (MG) from the wastewater under the exposure of 18 W energy of UV lamp.

  13. Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Çorlu, Tugba; Yıldırım, M. Ali; Ateş, Aytunç; Acar, Selim

    2017-03-01

    Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H2 gas with high response. The maximum response was 75% at operating temperature of 200°C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.

  14. Effect of different nickel precursors on capacitive behavior of electrodeposited NiO thin films

    NASA Astrophysics Data System (ADS)

    Kore, R. M.; Ghadge, T. S.; Ambare, R. C.; Lokhande, B. J.

    2016-04-01

    In the present study, the effect of nickel precursors containing different anions like nitrate, chloride and sulphate on the morphology and pseudocapacitance behavior of NiO is investigated. The NiO samples were prepared by using a potentiondynamic electrodeposition technique in the three electrode cell. Cyclic voltammetry technique was exploited for potentiodynamic deposition of the films. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), etc. The XRD reveals the cubic crystal structure for all samples. The SEM micrograph shows nanoflakelike, up grown nanoflakes and honeycomb like nanostructured morphologies for nitrate, chloride and sulphate precursors respectively. The capacitive behavior of these samples was recorded using cyclic voltammetry (CV), charge-discharge and electrochemical impedance spectroscopy (EIS) in 1 M KOH electrolyte. The specific capacitance values of NiO samples obtained using CV for nitrate, chloride and sulphate precursors were 136, 214 and 893 Fg-1 respectively, at the scan rate of 5 mVs-1. The charge discharge study shows high specific energy for the sample obtained from sulphate (23.98 Whkg-1) as compared to chloride (9.67 Whkg-1) and nitrate (4.9 Whkg-1), whereas samples of cholride (13.9 kWkg-1 and nitrate (10.5 kWkg-1) shows comparatively more specific power than samples obtained from sulphate (7.6 kWkg-1). The equivalent series resistance of NiO samples observed from EIS study are 1.34, 1.29 and 1.27 Ω respectively for nitrate, chloride and sulphate precursors. These results emphasizes that the samples obtained from sulphate precursors provides very low impedance through honeycomb like nanostructured morphology which supports good capacitive behavior of NiO.

  15. Electronic and magnetic structure of epitaxial Fe3O4(001 ) /NiO heterostructures grown on MgO(001) and Nb-doped SrTiO3(001 )

    NASA Astrophysics Data System (ADS)

    Kuepper, K.; Kuschel, O.; Pathé, N.; Schemme, T.; Schmalhorst, J.; Thomas, A.; Arenholz, E.; Gorgoi, M.; Ovsyannikov, R.; Bartkowski, S.; Reiss, G.; Wollschläger, J.

    2016-07-01

    We study the underlying chemical, electronic, and magnetic properties of a number of magnetite-based thin films. The main focus is placed onto Fe3O4 (001)/NiO bilayers grown on MgO(001) and Nb-SrTiO3(001) substrates. We compare the results with those obtained on pure Fe3O4 (001) thin films. It is found that the magnetite layers are oxidized and Fe3 + dominates at the surfaces due to maghemite (γ -Fe2O3 ) formation, which decreases with increasing magnetite layer thickness. For layer thicknesses of around 20 nm and above, the cationic distribution is close to that of stoichiometric Fe3O4 . At the interface between NiO and Fe3O4 we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2 p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe2O4 interlayer can be excluded by means of x-ray magnetic circular dichroism. Magneto-optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and an altered in-plane easy axis pointing in the <100 > direction. We discuss the spin magnetic moments of the magnetite layers and find that a thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.

  16. Thin-walled NiO tubes functionalized with catalytic Pt for highly selective C2H5OH sensors using electrospun fibers as a sacrificial template.

    PubMed

    Cho, Nam Gyu; Woo, Hyung-Sik; Lee, Jong-Heun; Kim, Il-Doo

    2011-10-28

    Hollow thin walled NiO tubes functionalized by catalytic Pt were synthesized via nanofiber templating and multilayered sputter-coating of Pt and NiO thin overlayers followed by heat-treatment at 600 °C. Sandwich Pt-NiO-Pt tube networks exhibited superior C(2)H(5)OH sensing response and remarkable selectivity against CO and H(2) gases.

  17. Fabrication of NiO thin film electrode for supercapacitor applications

    SciTech Connect

    Mali, V. V.; Navale, S. T.; Chougule, M. A.; Khuspe, G. D.; Godse, P. R.; Patil, V. B.; Pawar, S. A.

    2014-04-24

    Nanocrystalline NiO electrode is successfully electrosynthesized for supercapacitor application. The nanocrystalline NiO electrode is characterized using scanning electron microscope (SEM). Nickel oxide is a highly porous and the film surface looked smooth and composed of fine elongated particles. The supercapacitive performance of NiO electrode is tested using cyclic voltammetry (C-V) technique in 0.5M Na{sub 2}S{sub 2}O{sub 3} electrolyte within potential range of −1.2 to +1.2 V. The effect of scan rate on the capacitance of NiO electrode is studied. The highest specific capacitance of 439 Fg{sup −1} at the voltage scan rate of 50mVs{sup −1} is achieved. Additionally stability and charging–discharging of NiO electrode are studied.

  18. EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E.; Bellarmine, F.; Ramanjaneyulu, M.; Lamberti, Carlo; Ramachandra Rao, M. S.

    2013-09-01

    Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni0 nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

  19. Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

    NASA Astrophysics Data System (ADS)

    Sugiyama, Mutsumi; Nakai, Hiroshi; Sugimoto, Gaku; Yamada, Aika; Chichibu, Shigefusa F.

    2016-08-01

    The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2 V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.

  20. Fabrication of hetero-junction diode using NiO thin film on ITO/glass substrate

    NASA Astrophysics Data System (ADS)

    Soni, Sonali; Sharma, Vinay; Kuanr, Bijoy K.

    2016-05-01

    Fabrication, characterization and testing of hetero-junctions of NiO thin films were done. Nickel films were evaporated on polished ITO coated glass substrates using thermal deposition. The films were annealed at high temperatures in the presence of oxygen to obtain NiO films. The rectifying current-voltage (I-V) properties confirmed that a hetero-junction diode was successfully formed. The AC and DC behavior of hetero-junction using DC silver-probes were determined. The threshold voltage, ideality factor and reverse saturation current of hetero junction were determined. We have compared these I-V characteristics with semiconducting PN junction diode. To test the device characteristics, we used the structure as a diode clipper at various frequencies. It is showed that our device is a better high-frequency junction-device than a normal PN junction diode.

  1. Tuning the metal-insulator transition temperature of Sm0.5Nd0.5NiO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gardner, H. Jeffrey; Singh, Vijay; Zhang, Le; Hong, Xia

    2014-03-01

    We have investigated the effect of substrate induced strain and film thickness on the metal-insulator transition of the correlated oxide Sm0.5Nd0.5NiO3 (SNNO). We have fabricated epitaxial 3 - 40 nm thick SNNO films on (001) LaAlO3 (LAO), (001) SrTiO3 (STO), and (110) NdGaO3 (NGO) via off-axis RF magnetron sputtering. The SNNO films are atomically smooth with (001) orientation as determined by atomic force microscopy and x-ray diffraction. SNNO films grown on LAO, subject to compressive strain, exhibit a sharp metal-insulator transition at lower temperatures. Conversely, films grown on STO and NGO, subject to tensile strain, exhibit a smeared albeit above room temperature metal-insulator transition. For all substrates, we have observed that the metal-insulator transition temperature (TMI) increases monotonically with decreasing film thickness until the electrically dead layer is reached (below 4 nm). We discuss the effect of strain and oxygen deficiencies on the TMI of SNNO thin films.

  2. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    NASA Astrophysics Data System (ADS)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  3. Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction

    SciTech Connect

    Aydogdu, Gulgun H.; Ruzmetov, Dmitry; Ramanathan, Shriram

    2010-12-01

    The ability to controllably tune cation valence state and resulting electrical conductivity of transition metal-oxides such as NiO is of great interest for a range of solid state electronic and energy devices and more recently in understanding electron correlation phenomena at complex oxide interfaces. Here, we demonstrate that it is possible to enhance electrical conductivity of NiO thin films by one order of magnitude by photoexcitation and three orders of magnitude by ozone treatment at as low as 310 K. The change occurs within nearly 2000 s and, thereafter, reaches a self-limiting value. A surprising difference is seen at 400 K: ultraviolet photon and ozone treatments cause only a marginal reduction in resistance in the first few minutes and, then, the resistance begins to increase and recovers its original value. This unusual reversal is explained by considering metastable incorporation of oxygen in NiO and oxygen equilibration with the environment. Variation in nickel valence state prior to and after photoexcitation and ozone treatment, investigated by x-ray photoelectron spectroscopy, provides mechanistic insights into resistance trends. This study demonstrates photon-assisted and ozone oxidation as effective low temperature routes to tune the electrical properties as well as metastably incorporate oxygen into oxides with direct influence on electrical conduction properties.

  4. NiO nanosheets grown on graphene nanosheets as superior anode materials for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Zou, Yuqin; Wang, Yong

    2011-06-01

    This paper reports a hydrothermal preparation of NiO-graphene sheet-on-sheet and nanoparticle-on-sheet nanostructures. The sheet-on-sheet nanocomposite showed highly reversible large capacities at a common current of 0.1 C and good rate capabilities. A large initial charge capacity of 1056 mAh/g was observed for the sheet-on-sheet composite at 0.1 C, which decreased by only 2.4% to 1031 mAh/g after 40 cycles of discharge and charge. This cycling performance is better than that of NiO nanosheets, graphene nanosheets, NiO-graphene nanoparticle-on-sheet, and previous carbon/carbon nanotube supported NiO composites. It is believed that the mechanical stability and electrical conductivity of NiO nanosheets are increased by graphene nanosheets (GNS), the aggregation or restacking of which to graphite platelets are, on the other hand, effectively prevented by NiO nanosheets.

  5. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01601d

  6. Effects of anode materials on resistive characteristics of NiO thin films

    SciTech Connect

    Jia, Ze; Wang, Linkai; Zhang, Naiwen; Ren, Tianling; Liou, Juin J.

    2013-01-28

    This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.

  7. Surface-phonon dispersion of a NiO(100) thin film

    NASA Astrophysics Data System (ADS)

    Kostov, K. L.; Polzin, S.; Saha, S. K.; Brovko, O.; Stepanyuk, V.; Widdra, W.

    2013-06-01

    A well-ordered 25 ML epitaxial NiO(100) film on Ag(100) as prepared by layer-by-layer growth has been characterized by high-resolution electron energy loss spectroscopy. Six different phonon branches have been identified in the Γ¯X¯ direction of the surface Brillouin zone and are compared with first-principles phonon calculations. Whereas the surface Rayleigh mode shows a strong upward dispersion of 173 cm-1 in agreement with observations for the NiO(100) single crystal, the other surface phonons and surface resonances show only smaller dispersion widths in Γ¯X¯ direction. The Wallis and the Lucas phonons are localized at 425 and 367 cm-1 at the Γ¯ point, respectively. Additionally, two phonons are identified that have stronger weight at the zone boundary at 194 and 285 cm-1 and that become surface resonances at the zone center. The dominant spectral feature is the Fuchs-Kliewer (FK) phonon polariton at 559 cm-1, which is excited by dipole scattering and exhibits a rather broad non-Lorentzian lineshape. The lineshape is explained by a FK splitting resulting from the splitting of bulk optical phonons due to antiferromagnetic order. This view is supported by calculations of the surface-loss function from bulk reflectivity data.

  8. Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

    NASA Astrophysics Data System (ADS)

    Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

    2016-01-01

    Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

  9. Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

    PubMed Central

    Yamauchi, Ryosuke; Hamasaki, Yosuke; Shibuya, Takuto; Saito, Akira; Tsuchimine, Nobuo; Koyama, Koji; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-01-01

    Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline α-Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates. PMID:26402241

  10. Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

    NASA Astrophysics Data System (ADS)

    Yamauchi, Ryosuke; Hamasaki, Yosuke; Shibuya, Takuto; Saito, Akira; Tsuchimine, Nobuo; Koyama, Koji; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-09-01

    Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline α-Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates.

  11. Effect of Sputtering Temperature on Structure and Optical Properties of NiO Films Fabricated by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Zhao, Yang; Li, Xinzhong; Zhen, Zhiqiang; Li, Hehe; Wang, Jingge; Tang, Miaomiao

    2017-03-01

    NiO thin films were deposited on sapphire and Corning 1737 glass substrates using the radio frequency magnetron sputtering system. The structures, optical and electrical properties of NiO films grown under different sputtering temperatures were thoroughly studied. The NiO films were composed of different-size NiO nano-grains with a strong (111) preferred orientation. The NiO grain size increased with the sputtering temperature increase. The band gap values decreased from 3.69 eV to 3.38 eV on the sputtering temperature increase from 30°C to 450°C. Moreover, the electrical property variations of the NiO samples were studied by the Hall effect in detail.

  12. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

    SciTech Connect

    Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish

    2012-01-01

    We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

  13. Creatinine biomaterial thin films grown by laser techniques.

    PubMed

    György, E; Axente, E; Mihailescu, I N; Predoi, D; Ciuca, S; Neamtu, J

    2008-03-01

    Creatinine thin films were synthesised by matrix assisted pulsed laser deposition (PLD) techniques for enzyme-based biosensor applications. An UV KrF* (lambda=248 nm, tau approximately 10 ns) excimer laser source was used for the irradiation of the targets at incident fluence values in the 0.3-0.5 J/cm2 range. For the matrix assisted PLD the targets consisted on a frozen composite obtained by dissolving the biomaterials in distilled water. The surface morphology, chemical composition and structure of the obtained biomaterial thin films were investigated by scanning electron microscopy, Fourier transform infrared spectroscopy, and electron dispersive X-ray spectroscopy as a function of the target preparation procedure and incident laser fluence.

  14. BiVO4 thin film photoanodes grown by chemical vapor deposition.

    PubMed

    Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

    2014-01-28

    BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

  15. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

    SciTech Connect

    Pathan, H.M.; Lokhande, C.D. . E-mail: l_chandrakant@yahoo.com; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan . E-mail: shhan@hanyang.ac.kr

    2005-06-15

    Indium sulphide (In{sub 2}S{sub 3}) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In{sub 2}S{sub 3} thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study.

  16. Thin YBCO films on ? (001) substrates grown by injection MOCVD

    NASA Astrophysics Data System (ADS)

    Abrutis, A.; Sénateur, J. P.; Weiss, F.; Kubilius, V.; Bigelyte, V.; Saltyte, Z.; Vengalis, B.; Jukna, A.

    1997-12-01

    YBCO thin (about 0953-2048/10/12/021/img10) films were deposited at 0953-2048/10/12/021/img11 on 0953-2048/10/12/021/img12 (001) by single-source injection CVD. Precisely controlled microamounts of organometallic 0953-2048/10/12/021/img13-diketonates dissolved in an organic solvent were injected sequentially into the evaporator by means of a computer-driven injector and the resultant vapour was transported into the deposition zone. The influence of the vapour phase composition on films' properties was investigated. A mixture of 0953-2048/10/12/021/img14 and 0953-2048/10/12/021/img15-oriented YBCO crystallites exists in all deposited films and its ratio depends on the vapour phase composition. For both a and c perpendicular crystallites only 0953-2048/10/12/021/img16 in-plane orientation with respect to substrate axes was found. Bidirectional twinning was established in the crystallites of both types. 0953-2048/10/12/021/img17 of the films (about 90 K) was almost independent of the vapour phase composition in the studied range. However, the critical current density 0953-2048/10/12/021/img18 depended clearly on the vapour phase composition in relation to the 0953-2048/10/12/021/img19 ratio variation. 0953-2048/10/12/021/img18 of the films varied in the range 0953-2048/10/12/021/img21.

  17. Anomalous capacitance change in low-temperature grown ZnO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Seo, O.; Kim, H.; Jo, J.

    2010-10-01

    We studied capacitance-voltage characteristics of ZnO thin-film transistors (TFT's), grown by metalorganic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at 450 °C and the other at 350 °C. ZnO grown at 450 °C showed smooth capacitance profile with electron density of 1.5×1020 cm-3. In contrast, ZnO grown at 350 °C showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the SiO2 interface. Current-voltage and capacitance-voltage data support that our ZnO films have anisotropic conductivity.

  18. Polarity and microstructure in InN thin layers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Kuwano, N.; Nakahara, Y.; Amano, H.

    2006-06-01

    Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed

  19. Effect of NiO spin orientation on the magnetic anisotropy of the Fe film in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001)

    SciTech Connect

    Kim, W.; Jin, E.; Wu, J.; Park, J.; Arenholz, E.; Scholl, A.; Hwang, C.; Qiu, Z.

    2010-02-10

    Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichroism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spin orientation changes from in-plane direction in Fe/NiO/Ag(001) to out-of-plane direction in Fe/NiO/MgO(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90{sup o}-coupling between the in-plane NiO spins and the in-plane Fe spins.

  20. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  1. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  2. Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

    SciTech Connect

    Nag, Joyeeta; Payzant, E Andrew; More, Karren Leslie; HaglundJr., Richard F

    2011-01-01

    Stoichiometric vanadium dioxide in bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by a structural phase transformation, induced by temperature, light, electric fields, doping or strain. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving (1) room temperature growth followed by annealing and (2) direct high temperature growth. Strain at the film-substrate interface due to growth at different temperatures leads to interesting differences in morphologies and phase transition characteristics. Comparison of the morphologies and switching characteristics of the two films shows that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance, consistent with the behavior of epitaxially grown semiconductors.

  3. Y1Ba2Cu3O7-δ thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takano, Satoshi; Hayashi, Noriki; Okuda, Shigeru; Hitosuyanagi, Hajime

    1989-12-01

    Y1Ba2Cu3O7-δ thin films were grown on (100)MgO and polycrystalline YSZ substrates by RF magnetron sputtering. We measured the magnetic field dependence of Jc of these films. The films grown on MgO with Jc of 4.0x106, 2.9 x106 and 1.5x104 A/cm2 at OT showed 7.1x105 A/cm2 at 8T, 1x104 A/cm2 at 20T and 1.1x103 A/cm2 at 5 T, respectively . We could attain a c-axis oriented film with a Jc of 1.2x104 A/cm2 on YSZ polycrystalline substrate, however, it showed greater degradation than the films grown on MgO in Jc with magnetic field.

  4. Y 1Ba 2Cu 3O 7-δ thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takano, Satoshi; Hayashi, Noriki; Okuda, Shigeru; Hitosuyanagi, Hajime

    1989-12-01

    Y 1Ba 2Cu 3O 7-δ thin films were grown on (100)MgO and polycrystalline YSZ substrates by RF magnetron sputtering. We measured the magnetic field dependence of Jc of these films. The films grown on MgO with Jc of 4.0x10 6, 2.9 x10 6 and 1.5x10 4 A/cm 2 at OT showed 7.1x10 5 A/cm 2 at 8T, 1x10 4 A/cm 2 at 20T and 1.1x10 3 A/cm 2 at 5 T, respectively . We could attain a c-axis oriented film with a Jc of 1.2x10 4 A/cm 2 on YSZ polycrystalline substrate, however, it showed greater degradation than the films grown on MgO in Jc with magnetic field.

  5. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  6. Characterization of nanostructured iron selenide thin films grown by chemical route at room temperature

    SciTech Connect

    Ubale, A.U.; Sakhare, Y.S.; Belkedkar, M.R.; Singh, Arvind

    2013-02-15

    Highlights: ► Nanostructured FeSe thin films were successfully synthesized at room temperature by CBD method. ► The XRD and EDAX characterization confirms nanocrystalline nature of FeSe. ► The SEM and AFM show microporous morphology with nanorods and nanoplates of FeSe. -- Abstract: Iron selenide thin films have been deposited onto glass substrates by using chemical bath deposition technique. Structural characterization of iron selenide thin films was carried out by means of X-ray diffraction and Fourier transforms infrared spectrum. The morphological characterization of FeSe thin film was carried out using scanning electron microscopy and atomic force microscopy, which revealed porous grain morphology of FeSe with some nano rectangular rods and plates grown on it. The as-deposited thin films exhibited optical band gap energy 2.60 eV. The as deposited FeSe thin films are semiconducting in nature with p-type electrical conductivity. The room temperature electrical resistivity is of the order of 1.1 × 10{sup 5} Ω-cm with activation energy 0.26 and 0.95 eV, respectively, in low and high temperature region.

  7. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  8. Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, M.; Ray, S. K.; Ghosh, T. B.; Sreemany, M.; Maiti, C. K.

    1996-03-01

    The chemical state and the electrical properties of the interfaces of thin oxide films grown on strained 0268-1242/11/3/014/img8 layers using plasma and thermal oxidation have been studied in detail. X-ray photoelectron spectroscopy studies show no Ge pile-up at the oxide/substrate interface. In the case of plasma oxidation, Ge at the oxide surface is found to be in a fully oxidized state, while the formation of an intermediate oxidized state is observed in the case of low-temperature thermal oxidation. High-frequency (1 MHz) capacitance - voltage (C - V) and conductance - voltage (G - V) measurements have indicated the growth of good quality gate oxides. The fixed oxide charge and interface state densities are comparable to those of low-temperature-grown metal - oxide - semiconductor capacitors on Si with aluminium gates.

  9. Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

    NASA Technical Reports Server (NTRS)

    Lieneweg, U.; Bean, J. C.

    1984-01-01

    Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

  10. Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

    SciTech Connect

    Gago, R.; Abrasonis, G.; Muecklich, A.; Moeller, W.; Czigany, Zs.; Radnoczi, G.

    2005-08-15

    Carbon nitride (CN{sub x}) thin films were grown by direct N{sub 2}/Ar ion beam sputtering of a graphite target at moderate substrate temperatures (300-750 K). The resulting microstructure of the films was studied by high-resolution transmission electron microscopy. The images showed the presence of curved basal planes in fullerenelike arrangements. The achievement and evolution of these microstructural features are discussed in terms of nitrogen incorporation, film-forming flux, and ion bombardment effects, thus adding to the understanding of the formation mechanisms of curved graphitic structures in CN{sub x} materials.

  11. Growth and atomic structure of tellurium thin films grown on Bi2Te3

    NASA Astrophysics Data System (ADS)

    Okuyama, Yuma; Sugiyama, Yuya; Ideta, Shin-ichiro; Tanaka, Kiyohisa; Hirahara, Toru

    2017-03-01

    We have grown tellurium (Te) thin films on Bi2Te3 and investigated the atomic structure. From low-energy electron diffraction (LEED) measurements, we found that the Te films are [10 1 bar0]-oriented with six domains. A detailed analysis of the reflection high-energy electron diffraction (RHEED) pattern revealed that the films are strained with the in-plane lattice constant compressed by ∼1.5% compared to the bulk value due to the epitaxy between Te and Bi2Te3. These films will be interesting systems to investigate the predicted topological phases that occur in strained Te.

  12. Synthesis and characterization of TiO2 nanostructure thin films grown by thermal CVD

    NASA Astrophysics Data System (ADS)

    Rizal, Umesh; Das, Soham; Kumar, Dhruva; Swain, Bhabani S.; Swain, Bibhu P.

    2016-04-01

    Thermal Chemical Vapor Deposition (CVD) deposited Titanium dioxide nanostructures (TiO2-NSs) were grown by using Ti powder and O2 precursors on Si/SiO2 (100) substrate. The microstructure and vibration properties of TiO2-NSs were characterized by Fourier transform infrared (FTIR), SEM, and photoluminescence (PL) spectroscopy. The role of O2 flow rate on TiO2-NSs revealed decreased deposition rate, however, surface roughness has been increased resulted into formation of nanostructure thin films.

  13. One-dimensional edge state of Bi thin film grown on Si(111)

    SciTech Connect

    Kawakami, Naoya; Lin, Chun-Liang; Kawai, Maki; Takagi, Noriaki; Arafune, Ryuichi

    2015-07-20

    The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

  14. Preparation of AgInSe2 thin films grown by vacuum evaporation method

    NASA Astrophysics Data System (ADS)

    Matsuo, H.; Yoshino, K.; Ikari, T.

    2006-09-01

    Polycrystalline AgInSe2 thin films were successfully grown on glass substrates by an evaporation method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. X-ray diffraction revealed that the sample annealed at 600 °C consisted of AgInSe2 single phase, with (112) orientation and a large grain size. The lattice constant (a axis) was close to JCPDS values. From optical transmittance and reflectance measurements, the bandgap energy was estimated to be 1.17 eV.

  15. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    NASA Astrophysics Data System (ADS)

    El-Atab, Nazek; Alqatari, Samar; Oruc, Feyza B.; Souier, Tewfic; Chiesa, Matteo; Okyay, Ali K.; Nayfeh, Ammar

    2013-10-01

    A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ˜3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

  16. Properties of boron-doped ZnO thin films grown by using MOCVD

    NASA Astrophysics Data System (ADS)

    Choi, In-Hwan

    2013-11-01

    Boron-doped ZnO thin films were prepared by using metal organic chemical-vapor deposition (MOCVD) with diethyl zinc and water as precursors and B2H6 as the dopant gas. The effects of the flow rates of H2O and B2H6 on the growth and the electrical properties of boron-doped ZnO thin film were investigated. The maximum carrier concentration and mobility and the minimum resistivity obtained under these experimental conditions were 7 × 1020 /cm3, 42 cm2 /V·sec and 4 × 10-4 Ω·cm, respectively, at room temperature. The electrical properties, growth rates, transmittances, and surface morphologies of the ZnO:B films grown using MOCVD are strongly affected by growth conditions such as the relative flow rates of the precursors and dopant gases and the chamber pressure, and these effects are discussed in detail in this article.

  17. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  18. A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Cheng; Chen, Yu-Sung; Lee, Chao-Chun; Wu, Jen-Kai; Lee, Hsin-Yen; Liang, Chi-Te; Chang, Yuan Huei

    2016-06-01

    We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm-3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

  19. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  20. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  1. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    NASA Astrophysics Data System (ADS)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  2. Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Calka, P.; Martinez, E.; Lafond, D.; Minoret, S.; Tirano, S.; Detlefs, B.; Roy, J.; Zegenhagen, J.; Guedj, C.

    2011-06-01

    We investigated origins of the resistivity change during the forming of NiO based resistive random access memories in a nondestructive way using hard x-ray photoelectron spectroscopy. Energy shifts and bandgap states observed after switching suggest that oxygen vacancies are created in the low resistive state. As a result conduction may occur via defects such as electrons traps and metallic nickel impurities. Migration of oxygen atoms seems to be the driving mechanism. This provides concrete evidence of the major role played by oxygen defects in decreasing resistivity. This is a key point since oxygen vacancies are particularly unstable and thus difficult to identify by physico-chemical analyses.

  3. From Fe3O4 /NiO bilayers to NiFe2O4 -like thin films through Ni interdiffusion

    NASA Astrophysics Data System (ADS)

    Kuschel, O.; Buß, R.; Spiess, W.; Schemme, T.; Wöllermann, J.; Balinski, K.; N'Diaye, A. T.; Kuschel, T.; Wollschläger, J.; Kuepper, K.

    2016-09-01

    Ferrites with (inverse) spinel structure display a large variety of electronic and magnetic properties, making some of them interesting for potential applications in spintronics. We investigate the thermally induced interdiffusion of Ni2 + ions out of NiO into Fe3O4 ultrathin films, resulting in off-stoichiometric nickel ferrite-like thin layers. We synthesized epitaxial Fe3O4 /NiO bilayers on Nb-doped SrTiO3(001) substrates by means of reactive molecular beam epitaxy. Subsequently, we performed an annealing cycle comprising three steps at temperatures of 400 ∘C , 600 ∘C , and 800 ∘C under an oxygen background atmosphere. We studied the changes of the chemical and electronic properties as result of each annealing step with help of hard x-ray photoelectron spectroscopy and found a rather homogeneous distribution of Ni and Fe cations throughout the entire film after the overall annealing cycle. For one sample we observed a cationic distribution close to that of the spinel ferrite NiFe2O4 . Further evidence comes from low-energy electron diffraction patterns indicating a spinel-type structure at the surface after annealing. Site- and element-specific hysteresis loops performed by x-ray magnetic circular dichroism uncovered the antiferrimagnetic alignment between the octahedral coordinated Ni2 + and Fe3 + ions and the Fe3 + ion in tetrahedral coordination. We find a quite low coercive field of 0.02 T, indicating a rather low defect concentration within the thin ferrite films.

  4. Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Mukherjee, Joynarayan; Mannam, Ramanjaneyulu; Ramachandra Rao, M. S.

    2017-04-01

    We report on the variable range hopping (VRH) crossover in the electrical transport of Sb doped ZnO (SZO) thin film. Structural, chemical, electrical and magnetotransport properties were carried out on SZO thin film grown by pulsed laser deposition. X-photoelectron spectroscopy study confirms the presence of both Sb3+(33%) and Sb5+(67%) states. Sb doped ZnO thin film shows n-type behavior which is attributed to the formation of SbZn and/or SbZn–VZn defect complex. Temperature dependent resistivity measurement showed that in a low temperature regime (< 90 K) transport is governed by the 3D-VRH mechanism. A crossover from 3D-VRH to Efros–Shklovoski VRH was observed around 12 K. Negative magnetoresistance (MR) is observed in the entire temperature range (300–5 K), however, there is an upturn in the MR behavior at 5 K suggesting the existence of a positive component. The MR behavior of Sb doped ZnO thin films is explained by the Khosla and Fischer model.

  5. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  6. Strain induced modulation of the correlated transport in epitaxial Sm0.5Nd0.5NiO3 thin films.

    PubMed

    Zhang, L; Gardner, H J; Chen, X G; Singh, V R; Hong, X

    2015-04-10

    We report a study of the effect of epitaxial strain on the correlated transport properties of 2-40 nm Sm0.5Nd0.5NiO3 (SNNO) films grown on different substrates. The metal-insulator transition (MIT) temperature T(MI) of the SNNO films increases with increasing tensile strain. While films on (0 0 1) LaAlO3 and (1 1 0) NdGaO3 substrates exhibit a sharp MIT and thermal hysteresis in the cooling-heating cycle, signaling a first-order transition, films on (0 0 1) SrTiO3 show a broad, second-order MIT. Hall effect measurements reveal hole-type charge carriers and thermally activated temperature dependence of the carrier density below T(MI). The corresponding activation energy is ∼80 meV for films on LaAlO3 and NdGaO3, and is suppressed to 25 meV for films on SrTiO3. The carrier mobility in the metallic state and variable range hopping (VRH) transport at a low temperature point significantly enhanced electron localization in SNNO on STO, which we believe is not simply driven by extrinsic effects such as oxygen vacancies, but rather is an intrinsic characteristic for films subject to tensile strain due to the elongated Ni-O bond and hence enhanced dynamic Jahn-Teller distortion. In ultrathin films above the electrical dead layer thickness (2-3 nm), we observe a more than 100 K increase of T(MI) for films on LaAlO3, which has been correlated with a crossover from 3D to 2D transport as revealed from VRH. We attribute the distinct transport characteristics to strain induced modulation of various energy scales associated with the Ni-O-Ni bond angle and Ni-O bond length, which collectively determine the delocalization bandwidth of the system.

  7. Induced polarized state in intentionally grown oxygen deficient KTaO{sub 3} thin films

    SciTech Connect

    Mota, D. A.; Romaguera-Barcelay, Y.; Tkach, A.; Agostinho Moreira, J.; Almeida, A.; Perez de la Cruz, J.; Vilarinho, P. M.; Tavares, P. B.

    2013-07-21

    Deliberately oxygen deficient potassium tantalate thin films were grown by RF magnetron sputtering on Si/SiO{sub 2}/Ti/Pt substrates. Once they were structurally characterized, the effect of oxygen vacancies on their electric properties was addressed by measuring leakage currents, dielectric constant, electric polarization, and thermally stimulated depolarization currents. By using K{sub 2}O rich KTaO{sub 3} targets and specific deposition conditions, KTaO{sub 3-{delta}} oxygen deficient thin films with a K/Ta = 1 ratio were obtained. Room temperature X-ray diffraction patterns show that KTaO{sub 3-{delta}} thin films are under a compressive strain of 2.3% relative to KTaO{sub 3} crystals. Leakage current results reveal the presence of a conductive mechanism, following the Poole-Frenkel formalism. Furthermore, dielectric, polarization, and depolarization current measurements yield the existence of a polarized state below T{sub pol} {approx} 367 Degree-Sign C. A Cole-Cole dipolar relaxation was also ascertained apparently due to oxygen vacancies induced dipoles. After thermal annealing the films in an oxygen atmosphere at a temperature above T{sub pol}, the aforementioned polarized state is suppressed, associated with a drastic oxygen vacancies reduction emerging from annealing process.

  8. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  9. Two-dimensional Covalent Organic Framework Thin Films Grown in Flow.

    PubMed

    Bisbey, Ryan P; DeBlase, Catherine R; Smith, Brian J; Dichtel, William R

    2016-09-14

    Two-dimensional covalent organic frameworks (2D COFs) are crystalline polymer networks whose modular 2D structures and permanent porosity motivate efforts to integrate them into sensing, energy storage, and optoelectronic devices. These applications require forming the material as a thin film instead of a microcrystalline powder, which has been achieved previously by including a substrate in the reaction mixture. This approach suffers from two key drawbacks: COF precipitates form concurrently and contaminate the film, and variable monomer and oligomer concentrations during the polymerization provide poor control over film thickness. Here we address these challenges by growing 2D COF thin films under continuous flow conditions. Initially homogeneous monomer solutions polymerize while pumped through heated tubing for a given residence time, after which they pass over a substrate. When the residence time and conditions are chosen judiciously, 2D COF powders form downstream of the substrate, and the chemical composition of the solution at the substrate remains constant. COF films grown in flow exhibit constant rates of mass deposition, enabling thickness control as well as access to thicker films than are available from previous static growth procedures. Notably, the crystallinity of COF films is observed only at longer residence times, suggesting that oligomeric and polymeric species play an important role in forming the 2D COF lattice. This approach, which we demonstrate for four different frameworks, is both a simple and powerful method to control the formation of COF thin films.

  10. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  11. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  12. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  13. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.

    PubMed

    Gu, Yi; Wang, Kai; Zhou, Haifei; Li, Yaoyao; Cao, Chunfang; Zhang, Liyao; Zhang, Yonggang; Gong, Qian; Wang, Shumin

    2014-01-13

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

  14. Electronic and magnetic structure of ultra-thin Ni films grown on W(110)

    NASA Astrophysics Data System (ADS)

    Calloni, A.; Bussetti, G.; Berti, G.; Yivlialin, R.; Camera, A.; Finazzi, M.; Duò, L.; Ciccacci, F.

    2016-12-01

    We studied the electronic structure of thin Ni films grown on a W(110) single crystal, as a function of the Ni thickness, by means of angle-resolved photoemission and inverse photoemission spectroscopy, also with spin resolution. The results are discussed in the light of the different stages characterizing the transition from the pseudomorphic bcc to the fully relaxed fcc phase. A clear spin polarization is detected as soon as a bulk-like electronic structure is observed. In these conditions, we characterized the exchange splitting of the occupied bands at the Γbar and Mbar points of the surface Brillouin zone, providing further experimental support to previous interpretations of photoemission spectra from bulk Ni.

  15. 90{degree} Magnetization Switching in Thin Fe Films Grown on Stepped Cr(001)

    SciTech Connect

    Escorcia-Aparicio, E.J.; Choi, H.J.; Ling, W.L.; Kawakami, R.K.; Qiu, Z.Q.

    1998-09-01

    The ferromagnetic/antiferromagnetic interfacial interaction was investigated in thin Fe films grown on stepped Cr(001) with the steps parallel to the [100] direction. Above the N{acute e}el temperature of the Cr, the atomic steps induce a uniaxial magnetic anisotropy with the easy axis parallel to the step edges. Below the N{acute e}el temperature, the Fe-Cr interfacial interaction favors the Fe magnetization perpendicular to the step edges. The competition between the Fe-Cr interaction and the step-induced magnetic anisotropy results in an in-plane 90{degree} magnetization switching from perpendicular to the step edges at low step-density to parallel to the step edges at high step density. {copyright} {ital 1998} {ital The American Physical Society }

  16. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGES

    Craciun, D.; Socol, G.; Lambers, E.; ...

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  17. Effects of Growth Temperature on Epitaxial Thin Films of Vanadium Dioxide Grown by Pulsed Laser Deposition

    SciTech Connect

    Nag, Joyeeta; HaglundJr., Richard F; Payzant, E Andrew

    2011-01-01

    Stoichiometric vanadium dioxide in all of its bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by structural change, induced by various physical and chemical stimuli such as temperature, ultrashort light pulses, electric field, doping or strain. In these applications, the optical qualities of the films are of paramount importance, but are often highly variable depending on fabrication procedure. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving room temperature growth followed by annealing and direct high temperature growth. Strain at the interface of the substrate and the film due to growth at different temperatures leads to significant differences in morphologies and phase transition characteristics. We present a comparative study of the morphologies and switching characteristics of the two films and conclude that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance. Our observation is supported by theoretical and experimental studies of epitaxial growth of semiconductors.

  18. Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

    PubMed Central

    Jung, Chulseung; Kim, Seung Min; Moon, Hyunseong; Han, Gyuchull; Kwon, Junyeon; Hong, Young Ki; Omkaram, Inturu; Yoon, Youngki; Kim, Sunkook; Park, Jozeph

    2015-01-01

    Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications. PMID:26477744

  19. Martensite transformations in Mn2NiGa thin films grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Schaefer, D. M.; Neckel, I. T.; Mazzaro, I.; Graff, I. L.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

    2016-11-01

    The purpose of this work is to investigate the correlation between magnetism and crystallographic structures of Mn2NiGa thin films grown by molecular beam epitaxy on GaAs(1 1 1) and GaAs(0 0 1) surfaces. The films present themselves with thermoelastic martensitic transformations upon cooling, and heating with high-temperature leads to austenite structures exhibiting a preferable (1 1 0) texture. X-ray diffraction measurements performed as a function of temperature reveal three different types of domain variants in the films within a large interval of temperatures. The austenite structures with lattice parameters ranging from 0.574 nm to 0.601 nm undergo volume conserving structural transitions to martensite with a c/a ratio of 1.2. The coexistence of variants with different domain configurations is induced on each GaAs substrate. Although the Curie temperatures (~360 K) are similar for films grown on GaAs(1 1 1) and GaAs (0 0 1) substrates, their saturation magnetizations are respectively 18 kA m-1 and 8 kA m-1 at room temperature and exhibit quite different magnetic irreversibility behaviors. Our results indicate that a multiplicity of possible equivalent variant domains on the GaAs surfaces makes it difficult to stabilize epitaxial films on these substrates.

  20. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  1. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    NASA Astrophysics Data System (ADS)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  2. Phase and disorder investigations in boron nitride thin films grown by PECVD

    SciTech Connect

    Depero, L.E.; Sangaletti, L.; Schaffnit, C.; Rossi, F.; Gibson, P.N.

    1996-12-31

    Based on X-ray diffraction and infrared spectroscopy measurements, BN thin films grown by PECVD on silicon substrates have been studied with the aim of identifying the thin film phase. In a set of samples, while the infrared spectra showed characteristic bands of the hexagonal phase, X-ray diffraction patterns only displayed reflections belonging to the cubic BN phase. Therefore, structural models have been developed to explain the apparent inconsistency between the two sets of experimental data. In particular, static disorder effects--which have been introduced in the model starting from the sp{sup 2} hybridization of the ordered hexagonal phase, as suggested by the infra-red spectroscopy results--allowed a consistent interpretation of the X-ray diffraction patterns. For another set of samples, which also showed a characteristic hexagonal signal in the IR data, the XRD pattern could not be indexed with any of the BN phases. In this case, the presence of molecular and ionic phases, associated with impurities, was considered in structural modeling studies.

  3. Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

    NASA Astrophysics Data System (ADS)

    Götsch, Thomas; Mayr, Lukas; Stöger-Pollach, Michael; Klötzer, Bernhard; Penner, Simon

    2015-03-01

    Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films ("YSZ", 8 mol% Y2O3) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

  4. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  5. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2015-12-01

    Titanium doped tungsten oxide (Ti:WO3) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O2 atmosphere. Ti:WO3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10-3-5.0 × 10-3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm2) and tungsten (3 W/cm2) were kept constant. Ti:WO3 films deposited at an oxygen pressure of 5 × 10-3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm2/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: -22.01 mC/cm2, Qa: 17.72 mC/cm2), reversibility (80%) and methylene blue decomposition rate (-1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO3 films.

  6. The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kudryashov, D.; Gudovskikh, A.; Zelentsov, K.; Mozharov, A.; Babichev, A.; Filimonov, A.

    2016-08-01

    The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering at room temperature under different rf-power was investigated. Calculated activation energy of the conductivity for copper oxide (I) films linearly increases with increase in sputtering power reflecting an increasing in concentration of gap states.

  7. Optical and electrical properties of Titania thin films doped with In3+ and grown by sol-gel process.

    NASA Astrophysics Data System (ADS)

    Rodolfo Palomino Merino, Martín; Lozada Morales, Rosendo; Xoxocotzi Aguilar, Reyna; Díaz Furlong, Alfonso

    2004-03-01

    Using the sol-gel process were prepared Titania (TiO2) thin films formed on glass substrates by dip-coating method. The samples were grown starting from Titanium Isopropoxide and changing the concentration of In3+ ions from Indium Nitrate. The results of the characterization of the samples by UV-VIS spectroscopy , IR , thermopotency and conductivity will be reported.

  8. Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jo, Jungyol; Seo, Ogweon; Jeong, Euihyuk; Seo, Hyunseok; Lee, Byeongon; Choi, Yearn-Ik

    2007-04-01

    We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 °C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFT) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 °C showed good electrical characteristics, with a 13 cm2 V-1 s-1 mobility and a 103 on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.

  9. Direct synthesis of porous NiO nanowall arrays on conductive substrates for supercapacitor application

    SciTech Connect

    Zhu, Jianhui; Jiang, Jian; Liu, Jingping; Ding, Ruimin; Ding, Hao; Feng, Yamin; Wei, Guangming; Huang, Xintang

    2011-03-15

    Porous NiO nanowall arrays (NWAs) grown on flexible Fe-Co-Ni alloy have been successfully synthesized by using nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) as precursor and investigated as supercapacitor electrodes. In details, we adopted a simple hydrothermal method to realize Ni{sub 2}(OH){sub 2}CO{sub 3} NWAs and examined their robust mechanical adhesion to substrate via a long-time ultrasonication test. Porous NiO NWAs were then obtained by a post-calcination towards precursors at 500 {sup o}C in nitrogen atmosphere. Electrochemical properties of as-synthesized NiO NWAs were evaluated by cyclic voltammetry and galvanostatic charge/discharge; porous NiO NWAs electrode delivered a specific capacitance of 270 F/g (0.67 A/g); even at high current densities, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Meanwhile, it exhibited excellent cycle lifetime with {approx}93% specific capacitance kept after 4000 cycles. These results suggest that as-made porous NiO NWAs electrode is a promising candidate for future thin-film supercapacitors and other microelectronic systems. -- Graphical abstract: Porous NiO nanowall arrays (NWAs) grown on alloy substrate have been made using nullaginite as precursor and studied as supercapacitor electrodes. Porous nanowalls interconnected with each other resulting in the formation of extended-network architectures and exhibited excellent capacitor properties. NiO NWAs electrode delivered a capacitance of 270 F/g (0.67 A/g); even at high current density, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Besides, it exhibited excellent cycle lifetime with {approx}93% capacitance kept after 4000 cycles. These remarkable results made it possible for mass production of NiO NWAs and future thin-film microelectronic applications. Display Omitted Research highlights: {yields} Large-scale nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) nanowall arrays (NWAs) have been synthesized on

  10. Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire

    NASA Astrophysics Data System (ADS)

    Douglass, K.; Hunt, S.; Teplyakov, A.; Opila, R. L.

    2010-12-01

    Surface preparation procedures for indium gallium nitride (InGaN) thin films were analyzed for their effectiveness for carbon and oxide removal as well as for the resulting surface roughness. Aqua regia (3:1 mixture of concentrated hydrochloric acid and concentrated nitric acid, AR), hydrofluoric acid (HF), hydrochloric acid (HCl), piranha solution (1:1 mixture of sulfuric acid and 30% H 2O 2) and 1:9 ammonium sulfide:tert-butanol were all used along with high temperature anneals to remove surface contamination. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were utilized to study the extent of surface contamination and surface roughness, respectively. The ammonium sulfide treatment provided the best overall removal of oxygen and carbon. Annealing over 700 °C after a treatment showed an even further improvement in surface contamination removal. The piranha treatment resulted in the lowest residual carbon, while the ammonium sulfide treatment leads to the lowest residual oxygen. AFM data showed that all the treatments decreased the surface roughness (with respect to as-grown specimens) with HCl, HF, (NH 4) 2S and RCA procedures giving the best RMS values (˜0.5-0.8 nm).

  11. Growth and characterization of polymer thin films grown using molecular layer deposition with heterobifunctional precursors

    NASA Astrophysics Data System (ADS)

    Gibbs, Zachary Michael Conway

    In this work, growth of thin polymer films using molecular layer deposition with heterobifunctional precursors is investigated. Several growth phenomena are observed including: loss or gain of reactive sites as a result of precursor reactivity or vapor pressure; precursor diffusion and reaction within the porous polymer film; and crosslinking. Reactions were investigated using quartz crystal microbalance, Fourier transform infrared spectroscopy, and various ex situ techniques. Reactions involving 4-azidophenylisothiocyanate and 4-aminobenzonitrile were shown to stop growth after only a few cycles which is attributed to a loss in reactive sites which was modeled by an exponentially decaying growth rate. Growth of 4-carboxyphenylisothiocyanate with TMA and water was investigated as well. Active site multiplication as a result of the trifunctionality of the TMA molecule was proposed to explain the significantly higher growth rate for TMA/CI films. TMA/H2O/CI films showed the ability to crosslink through aluminum hydroxyl condensation reactions. Upon increasing the reaction temperature, reactant diffusion was observed in the form of mass removal upon TMA exposure. This same phenomena is thought to be occurring in films grown using Diels-Alder reactions in the third section of this thesis. These films showed a strong growth rate dependence upon reactant purge time and growth temperature. FTIR seems to weakly support Diels-Alder reaction, but it appears that the primary film growth mechanism is through CVD-like diffusion and condensation reactions.

  12. Neutron Depth Profiling (NDP) of boron thin films in epitaxially grown silicon

    NASA Astrophysics Data System (ADS)

    Chen-Mayer, H. Heather; Lamaze, George P.; Simons, David S.

    2001-03-01

    Neutron Depth Profiling is a technique for the determination of concentration and distribution of certain light elements in the region of about 1 µm below a solid surface. An incident neutron beam activates the nucleus of interest and causes the emission of reaction products in the form of charged particles which carry information of the reaction origin. The eligible elements include boron, lithium, and nitrogen. The most common substrate measured at NIST is silicon. We have studied a calibration sample for the purpose of inter-comparison between NDP and SIMS. The sample is a multilayer consisting of a 1 µm-thick epitaxially grown silicon film with four thin layers of boron about 0.25 micrometers apart. A previous study on the mathematical modeling of the NDP data indicates a discrepancy between the NDP and the SIMS data, either due to the uncertainty of the density of the film or of the stopping power of the alpha particle in silicon. The density has been verified by x-ray reflectivity to be that of the bulk. To understand this discrepancy, we have measured the angular dependence of the charged-particle emission which provides an experimentally determined relation between the energy loss and the depth. The result is compared with the stopping power obtained from TRIM to determine whether the discrepancy can be resolved with a modified stopping power.

  13. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Preziosi, Daniele; Sander, Anke; Barthélémy, Agnès; Bibes, Manuel

    2017-01-01

    Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  14. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  15. Dynamics of surface evolution in semiconductor thin films grown from a chemical bath

    PubMed Central

    Gupta, Indu; Mohanty, Bhaskar Chandra

    2016-01-01

    Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability. PMID:27615367

  16. Comparative study of ITO and FTO thin films grown by spray pyrolysis

    SciTech Connect

    Ait Aouaj, M.; Diaz, R.; Belayachi, A.; Rueda, F.; Abd-Lefdil, M.

    2009-07-01

    Tin doped indium oxide (ITO) and fluorine doped tin oxide (FTO) thin films have been prepared by one step spray pyrolysis. Both film types grown at 400 deg. C present a single phase, ITO has cubic structure and preferred orientation (4 0 0) while FTO exhibits a tetragonal structure. Scanning electron micrographs showed homogeneous surfaces with average grain size around 257 and 190 nm for ITO and FTO respectively. The optical properties have been studied in several ITO and FTO samples by transmittance and reflectance measurements. The transmittance in the visible zone is higher in ITO than in FTO layers with a comparable thickness, while the reflectance in the infrared zone is higher in FTO in comparison with ITO. The best electrical resistivity values, deduced from optical measurements, were 8 x 10{sup -4} and 6 x 10{sup -4} {Omega} cm for ITO (6% of Sn) and FTO (2.5% of F) respectively. The figure of merit reached a maximum value of 2.15 x 10{sup -3} {Omega}{sup -1} for ITO higher than 0.55 x 10{sup -3} {Omega}{sup -1} for FTO.

  17. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  18. P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Man, Hamdi

    Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

  19. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect

    Roberts, Joel Glenn

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  20. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  1. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    SciTech Connect

    Hansen, Per-Anders Fjellvåg, Helmer; Nilsen, Ola; Finstad, Terje G.

    2016-01-15

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO{sub 2} as the UV-absorbing host material and investigated the energy transfer between TiO{sub 2} and 11 different lanthanide ions, Ln{sup 3+} (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO{sub 2} to Yb{sup 3+} with a second Ln{sup 3+}, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd){sub 3}/O{sub 3} (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl{sub 4}/H{sub 2}O precursor pairs. The focus of the work is to explore the energy transfer from TiO{sub 2} to Ln{sup 3+} ions, and the energy transfer between Ln{sup 3+} and Yb{sup 3+} ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO{sub 2} to Ln{sup 3+} in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln{sub 2}Ti{sub 2}O{sub 7}. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger

  2. UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Alkis, Sabri; Tekcan, Burak; Nayfeh, Ammar; Kemal Okyay, Ali

    2013-10-01

    We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

  3. Defect-free thin InAs nanowires grown using molecular beam epitaxy.

    PubMed

    Zhang, Zhi; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2016-01-21

    In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.

  4. Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, J. F.; Thibado, P. M.; Awo-Affouda, C.; Ramos, F.; Labella, V. P.

    Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 {\\deg}C, the Mn distributes uniformly. For the samples grown at a high substrate temperature of 580 {\\deg}C, the concentration depth profiles are easily fitted with a temperature-dependent Fermi function only if the Mn concentration is above the solubility limit. However, when the Mn concentration is below the solubility limit, unexpected peaks are observed in the concentration depth profiles.

  5. Evidence of rhombohedral structure within BiFeO3 thin film grown on SrTiO3

    NASA Astrophysics Data System (ADS)

    Bae, In-Tae; Naganuma, Hiroshi

    2015-03-01

    Comprehensive crystal structure analysis was performed for a BiFeO3 thin layer (∼30 nm) grown on a SrTiO3 substrate using cross-sectional transmission electron microscopy along three different zone axes. Nano-beam electron diffraction patterns combined with structure factor calculations and high-resolution transmission electron microscopy images unambiguously revealed that the BiFeO3 thin layer grew with a rhombohedral structure identical to its bulk form. No evidence of monoclinic and/or tetragonal distortion was found. The rhombohedral BiFeO3 thin layer was found to grow onto SrTiO3 by maintaining an epitaxial relationship in a manner minimizing the lattice mismatch at the BiFeO3/SrTiO3 interface.

  6. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cui, J. B.; Thomas, M. A.; Soo, Y. C.; Kandel, H.; Chen, T. P.

    2009-08-01

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O2 and N2. The presence of N2 during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N2 concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N2 concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  7. On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition

    SciTech Connect

    Schmidt, Florian; Wenckstern, Holger von; Spemann, Daniel; Grundmann, Marius

    2012-07-02

    We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited Mg{sub x}Zn{sub 1-x}O thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate {eta}, is for binary ZnO thin films about 40 cm{sup -1}, a factor of 3 higher than in melt-grown single crystals, and increases to about 100 cm{sup -1} for the Mg-alloyed thin films.

  8. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    SciTech Connect

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  9. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  10. Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

    NASA Astrophysics Data System (ADS)

    Yoshida, T.; Tachibana, T.; Maemoto, T.; Sasa, S.; Inoue, M.

    2010-12-01

    We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm2/V s. By using the ZnO thin film grown by two-step PLD and a HfO2 high- k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×106 and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.

  11. X-ray diffraction and ellipsometric studies of zinc sulfide thin films grown by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Oikkonen, Markku

    1988-05-01

    The microstructure of ZnS thin films grown by atomic layer epitaxy (ALE) is investigated using X-ray diffraction and a single-line technique. Crystal structure, preferred orientation, crystallinity, crystallite size, crystallite size distribution, and microstrain are determined. Complex refractive indexes of the films are determined in the wavelength range 400 to 600 nm using spectroscopic ellipsometry. A two-layer model is employed, where the uppermost layer takes into account the surface roughness. Density of ZnS thin films is determined using ellipsometry and He(+)-ion backscattering spectrometry. In the first tens of nanometers of an ALE ZnS thin film the crystallinity and void content strongly depend on the substrate properties. Most of the films were grown on soda glass. It is found that after the bottom layer, at the distances from 50 to 100 nm to 300 to 400 nm from the substrate the crystallinity is good, crystallites are large, the specific orientation is strong, the void content is low, and the optical properties resemble those of bulk ZnS. At distances larger than 300 to 400 nm the surface roughness and the void content in the upper parts of the film increase because of the more and more randomly packed large crystallites. Substrate temperature and source materials affect the growth of all parts of the films.

  12. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    SciTech Connect

    Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

  13. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    SciTech Connect

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-10

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm{sup 2} has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  14. Spin-dependent Fabry-Pérot interference from a Cu thin film grown on fcc Co(001).

    PubMed

    Wu, Y Z; Schmid, A K; Altman, M S; Jin, X F; Qiu, Z Q

    2005-01-21

    Spin-dependent electron reflection from a Cu thin film grown on Co/Cu(001) was investigated using spin-polarized low-energy electron microscopy (SPLEEM). Fabry-Pe rot type interference was observed and is explained using the phase accumulation model. SPLEEM images of the Cu overlayer reveal magnetic domains in the Co underlayer, with the domain contrast oscillating with electron energy and Cu film thickness. This behavior is attributed to the spin-dependent electron reflectivity at the Cu/Co interface which leads to spin-dependent Fabry-Pe rot electron interference in the Cu film.

  15. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    NASA Astrophysics Data System (ADS)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  16. Superconducting YBa 2Cu 3O 7- δ thin film grown on metallic film evaporated on MgO

    NASA Astrophysics Data System (ADS)

    Verdyan, A.; Azoulay, J.; Lapsker, I.

    2001-03-01

    At present it is commonly accepted that thin film formation of YBa 2Cu 3O 7- δ (YBCO) on conducting substrate is one of the keys to further development of advanced devices in the microelectronic and other applications. We have grown YBCO thin films by resistive evaporation technique on MgO coated with metallic layers (Ni or Ag). A simple inexpensive vacuum system equipped with resistively heated boats for metal and precursor mixture of yttrium, copper and barium fluoride powders was used. X-ray diffraction (XRD) and scanning electron microscopy techniques were used for texture, morphology and surface analyses respectively. Electrical and magnetical properties were determined by a standard dc four-probe method. The way of heating process is shown to be critical parameter in the film quality. The physical and electrical properties of the YBCO films are discussed in light of the fact that XRD measurements done on the metallic buffer layers have revealed a multicrystalline structure.

  17. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-10-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ({T}{{c}}˜ 16.5 {{K}}) and largest gap among conventional superconductors. In its thin-film form, the T c of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high T c. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel parameter ({k}{{F}}{\\ell }) ˜ 12. Accordingly we observe {T}{{c}}˜ 17.06 {{K}} (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

  18. Optical parameters of Al-doped ZnO nanorod array thin films grown via the hydrothermal method.

    PubMed

    Kim, Soaram; Kim, Min Su; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jae-Young

    2013-09-01

    ZnO seed layers were deposited onto a quartz substrate using the sol--gel method, and Al-doped ZnO (AZO) nanorod array thin films with different Al concentrations that ranged from 0 to 2.0 at. % were grown on the ZnO seed layers via the hydrothermal method. Optical parameters, including the optical band gap, the absorption coefficient, the Urbach energy, the refractive index, the dispersion parameter, and the optical conductivity, were studied to investigate the effects of Al doping on the optical properties of AZO nanorod array thin films. The optical band gaps of the ZnO and AZO nanorod array thin films were 3.206 at 0 at.%, 3.214 at 0.5 at.%, 3.226 at 1.5 at.%, and 3.268 at 2.0 at.%. The Urbach energy gradually decreased from 126 meV (0 at.%) to 70 meV (2.0 at.%) as the Al concentration was increased. The dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the AZO nanorod array thin films were all affected by Al doping.

  19. Post-annealing effects on ZnS thin films grown by using the CBD method

    NASA Astrophysics Data System (ADS)

    Ahn, Heejin; Um, Youngho

    2015-09-01

    Herein, the structural, morphological, and optical properties of zinc sulfide (ZnS) thin films deposited via the chemical bath deposition method are reported. These films were deposited on soda-lime glass (SLG) substrates by using ZnSO4, thiourea, and 25% ammonia at 90 °C. The effect of changing the annealing temperature from 100 °C to 300 °C on the properties of the ZnS thin films was investigated. X-ray diffraction (XRD) patterns showed that the ZnS thin film annealed at 100 °C had an amorphous structure; however, as the annealing temperature was increased, the crystalline quality of the thin film was enhanced. Moreover, transmission measurements showed that the optical transmittance was about 80% for wavelengths above 500 nm. The band gap energy (E g ) value of the film annealed at 300 °C was decreased to about 3.82 eV.

  20. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  1. Theoretical studies of epitaxially grown Co and Ni thin films on (111) metallic substrates

    NASA Astrophysics Data System (ADS)

    Zelený, M.; Šob, M.

    2008-04-01

    Total energies of hcp and trigonally distorted fcc Co and Ni are studied from first principles. Regions of stability of these structures are found and the behavior of the total energies is used to explain and predict the lattice parameters and magnetic states of Co and Ni thin films on various (111) substrates. The stresses needed to keep the thin films coherent with the substrates are also determined. The theoretical results agree surprisingly well with available experimental data.

  2. Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

    SciTech Connect

    Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy; Fernández, Félix E.

    2015-09-28

    Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between room temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.

  3. Crystallinity of Li-doped Gd2O3:Eu3+ thin-film phosphors grown on Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Yi, Soung Soo; Bae, Jong Seong; Moon, Byung Kee; Jeong, Jung Hyun; Kim, Jung Hwan

    2005-02-01

    Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ luminescent thin films have been grown on Si (100) substrates using pulsed-laser deposition. The films grown at different deposition conditions show different microstructural and luminescent characteristics. Both cubic and monoclinic crystalline structures were observed in both Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ films, but the cubic phase becomes more dominant and the ratio of peak values IC(222)/IM(-402) increases rapidly for Li-doped Gd2O3:Eu3+ films. The photoluminescence brightness data obtained from Li-doped Gd2O3:Eu3+ films indicate that Si (100) is a promising substrate for growth of high-quality Li-doped Gd2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li + ions into the Gd2O3 lattice induced changes of crystallinity, surface roughness, and photoluminescence. The highest emission intensity was observed with Gd1.84Li0.08Eu0.08O3, whose brightness was a factor of 2.1 larger than that from Gd2O3:Eu3+ films. This phosphor is promising for applications in flat-panel displays.

  4. KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

    PubMed Central

    Beinik, Igor; Barth, Clemens; Hanbücken, Margrit; Masson, Laurence

    2015-01-01

    The growth of ultra-thin KCl films on the Si(111)7 × 7 reconstructed surface has been investigated as a function of KCl coverage and substrate temperature. The structure and morphology of the films were characterized by means of scanning tunneling microscopy (STM) under ultra-high vacuum (UHV) conditions. Detailed analysis of the atomically resolved STM images of islands grown at room and high temperatures (400 K–430 K) revealed the presence of KCl(001) and KCl(111) islands with the ratio between both structures depending on the growth temperature. At room temperature, the growth of the first layer, which covers the initial Si(111)7 × 7 surface, contains double/triple atomic layers of KCl(001) with a small fraction of KCl(111) islands. The high temperature growth promotes the appearance of large KCl(111) areas, which are built up by three atomic layers. At room and high temperatures, flat and atomically well-defined ultra-thin KCl films can be grown on the Si(111)7 × 7 substrate. The formation of the above mentioned (111) polar films is interpreted as a result of the thermally activated dissociative adsorption of KCl molecules on Si(111)7 × 7, which produces an excess of potassium on the Si surface. PMID:25650038

  5. Photoluminescence Characteristics of Pulsed Laser Deposited ZnO Thin Films Grown in Nitrogen/Oxygen Ambients

    NASA Astrophysics Data System (ADS)

    Thomas, M. A.; Cui, J. B.; Soo, Y. C.; Kandel, H.; Chen, T. P.; Daghlian, C. P.

    2009-03-01

    ZnO thin films were grown by pulsed laser deposition using a Zn target in different atmospheres. The samples were characterized by SEM, XRD, EDX, and temperature dependent photoluminescence (PL) measurements. The growth conditions were varied sequentially from a pure oxygen to a pure nitrogen atmosphere, and the resulting changes of the material properties were investigated. The presence of nitrogen during growth was found to have a strong impact on the materials. Samples grown with higher nitrogen concentrations showed weak PL characteristics at room temperature as well as a small temperature dependence of the near band edge emission. At temperatures below 40 K, a sharp and pronounced emission peak was present at 3.362 eV. In an attempt to understand the PL characteristics, the samples were annealed in both pure oxygen and pure nitrogen environments at 600 C. The samples grown with large nitrogen ratios exhibited a strong dependence on the annealing atmosphere; those annealed in nitrogen showed a strong increase in emissions in the 3.362 eV range compared to the same samples annealed in oxygen. In addition, the defect emissions of the samples were strongly affected by the presence of nitrogen during annealing. The possible role of nitrogen in ZnO growth and annealing is discussed.

  6. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    NASA Astrophysics Data System (ADS)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  7. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    SciTech Connect

    Chebil, W.; Fouzri, A.; Fargi, A.; Azeza, B.; Zaaboub, Z.; and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  8. Fractal features of CdTe thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  9. Properties of SnS thin films grown by physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Ganchev, M.; Vitanov, P.; Sendova-Vassileva, M.; Popkirov, G.; Dikov, H.

    2016-02-01

    Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates and on n-type Si substrate and their physical properties were studied. The phase of the obtained thin films before and after thermal treatment was confirmed by X-ray diffraction analysis and Raman spectra. Optical transmission and reflection spectra were measured in the wavelength range 300-1800 nm, and the data were used to determine the direct and indirect optical band gaps. Four-point measurements have revealed that SnS thin film exhibits p-type conduction. Current-voltage characteristics of the SnS/ n-Si structures demonstrate strong photosensitivity and photovoltaic effect. However, in order to be able to evaluate the potential applicability of this heterojunction for photovoltaic or electronic devices, further study and technological optimization has to be conducted.

  10. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  11. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    NASA Astrophysics Data System (ADS)

    McLeod, K.; Kumar, S.; Dutta, N. K.; Smart, R. St. C.; Voelcker, N. H.; Anderson, G. I.

    2010-09-01

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  12. Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates.

    PubMed

    Bae, Eun Ju; Min, Yo-Sep; Kim, Un Jeong; Park, Wanjun

    2007-12-12

    We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 microm(-2), which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics.

  13. Band dispersion near the Fermi level for VO2 thin films grown on TiO2 (001) substrates

    NASA Astrophysics Data System (ADS)

    Saeki, K.; Wakita, T.; Muraoka, Y.; Hirai, M.; Yokoya, T.; Eguchi, R.; Shin, S.

    2009-09-01

    We have performed angle-resolved photoemission spectroscopy (ARPES) measurements of VO2 using epitaxial thin films and observed the band dispersion near the Fermi level (EF) for this compound. The VO2 thin films have been grown on TiO2 (001) single-crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O2p band shows highly dispersive features in the binding-energy range of 3-8 eV along the Γ-Z direction. Also, the V3d state shows two dispersive bands around the Γ point near EF , indicative of two electron pockets centered at the Γ point. Both electron pockets have an occupied bandwidth of about 0.4 eV. Assuming the parabolic energy bands around the Γ point, the effective-mass ratios of the two electron pockets are estimated to be about 0.2 and 1. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2 and thus would play a crucial role to elucidate the mechanism of the MIT in VO2 .

  14. Thickness-Dependent Permanent Magnet Properties of Zr2 Co_{11} Thin Films Grown on Si with Pt Underlayer

    NASA Astrophysics Data System (ADS)

    Yüzüak, Gizem Durak; Yüzüak, Ercüment; Teichert, Niclas; Hütten, Andreas; Elerman, Yalçın

    2017-03-01

    Zr-Co is one of the essential magnetic materials due to its interesting magnetic and structural properties. In this work, we studied the magnetic and structural properties of Zr2 Co_{11} thin films of different thicknesses grown on Si substrate with Pt underlayer. The structural properties and chemical composition of the Zr2 Co_{11} films were investigated by X-ray diffraction analysis, scanning electron microscopy (SEM) with energy-dispersive X-ray (EDX) analysis, and atomic force microscopy-magnetic force microscopy measurements. The saturation magnetization, M(H) characteristic, and Henkel plots of the Zr-Co films were obtained by vibrating-sample magnetometry. The results show that H_{c} and (BH)_{\\max } were enhanced with decreasing layer thickness of Zr-Co. For 10-nm Zr2 Co_{11} with 20-nm Pt underlayer thin film, we observed coercive field of 2 kOe with energy product of 0.7 MGOe. Our results may be valuable for use of Zr2 Co_{11} thin films in nanomagnet applications.

  15. Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok K.; Kumar, Vinod; Purohit, L. P.; Swart, H. C.; Kroon, R. E.

    2016-10-01

    Zinc sulphide (ZnS) films are of great importance for applications in various optoelectronic devices. ZnS thin films were grown on glass, indium tin oxide (ITO) and Corning glass substrates by radio-frequency magnetron sputtering at a temperature of 373 K and a comparative study of the structural, optical and electrical properties was performed using X-ray diffraction (XRD), scanning electron microscopy, optical and current-voltage (I-V) measurements. The XRD patterns showed that the sputtered thin films exhibited good crystallinity with the (111) peak around 2θ=28.3° indicating preferential orientation of the cubic structure. The maximum strain and most densely packed grains were obtained for the Corning glass substrate. The transmittance spectra of the films were measured in the wavelength range from 200 to 800 nm, showing that the films are about 77% transparent in the visible region. A slight change of 3.50 eV to 3.54 eV was found for the bandgap of the films deposited on different substrates. The ZnS thin films deposited on Corning glass show better crystallinity, morphology and I-V characteristics than that deposited on ordinary glass and ITO substrates.

  16. Roughness of CdTe thin films grown on glass by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Leal, F. F.; Ferreira, S. O.; Menezes-Sobrinho, I. L.; Faria, T. E.

    2005-01-01

    Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

  17. Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Tavares, C. J.; Marques, S. M.; Viseu, T.; Teixeira, V.; Carneiro, J. O.; Alves, E.; Barradas, N. P.; Munnik, F.; Girardeau, T.; Rivière, J.-P.

    2009-12-01

    Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N2:O2 during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 °C the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and visible light.

  18. Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

    SciTech Connect

    Tavares, C. J.; Marques, S. M.; Viseu, T.; Teixeira, V.; Carneiro, J. O.; Alves, E.; Barradas, N. P.; Munnik, F.; Girardeau, T.; Riviere, J.-P.

    2009-12-01

    Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N{sub 2}:O{sub 2} during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 deg. C the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and

  19. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  20. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    PubMed

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  1. On the wetting behavior of ceria thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Fu, Sin-Pui; Rossero, Jorge; Chen, Chen; Li, Daniel; Takoudis, Christos G.; Abiade, Jeremiah T.

    2017-02-01

    Polymers are most widely used in the production of water-repellant coatings. However, their use in applications requiring wear resistance or high-temperature stability is extremely limited. A recent report suggests that wear resistant, thermally stable rare earth oxide materials like cerium dioxide (ceria) are intrinsically water repellant. We have studied this intriguing finding for ceria thin films fabricated by pulsed laser deposition (PLD) at different oxygen pressures and different substrate temperatures. We used a custom apparatus for measuring water contact angles on ceria films deposited by PLD. X-ray photoelectron spectroscopy was used to determine the relationship between the ceria wetting behavior and ceria surface chemistry. Our results show that ceria thin films are intrinsically hydrophilic and that hydrophobicity arises due to adsorption of hydrocarbon species after ˜24 h.

  2. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

    2012-01-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  3. Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2

    DOE PAGES

    Gill, Tobias; Fleurence, Antoine; Warner, Ben; ...

    2017-01-19

    We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting to themore » silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.« less

  4. Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

    DOE PAGES

    Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; ...

    2017-02-17

    We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting to themore » silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.« less

  5. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    PubMed Central

    Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

    2014-01-01

    A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

  6. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  7. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Lo, Fang-Yuh; Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Chern, Ming-Yau; Liu, Hsiang-Lin

    2015-06-01

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  8. Structural, optical and electrical properties of Sn x S y thin films grown by spray ultrasonic

    NASA Astrophysics Data System (ADS)

    Kherchachi, I. B.; Attaf, A.; Saidi, H.; Bouhdjer, A.; Bendjedidi, H.; Benkhetta, Y.; Azizi, R.

    2016-03-01

    Tin sulfide (Sn x S y ) thin films were prepared by a spray ultrasonic technique on glass substrate at 300 °C. The influence of deposition time t = 2, 4, 6, 8 and 10 min on different properties of thin films, such as (XRD), photoluminescence (PL) and (UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS2. The results of the (UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity (ρ) values of Sn x S y films have changed from 8.1 × 10-4 to 1.62 Ω·cm with deposition time.

  9. X-ray reflectivity analysis of titanium dioxide thin films grown by cathodic arc deposition.

    PubMed

    Kleiman, A; Lamas, D G; Craievich, A F; Márquez, A

    2014-05-01

    TiO2 thin films deposited by a vacuum arc on a glass substrate were characterized by X-ray reflectivity (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Several thin films with different amounts of deposited TiO2 mass and different deposition and annealing temperatures were studied. A qualitative analysis of the XRD patterns indicated the presence of the anatase and/or rutile crystalline phases in most of the studied samples. From the analysis of the experimental XRR curves--which exhibited a wide angular range of oscillatory behavior--the thickness, mass density and interface roughness were determined. All XRR patterns were well fitted by modeled curves that assume the presence of a single and homogeneous TiO2 layer over which a very thin H2O layer is adsorbed. The thickest H2O adsorption layers were developed in films with the highest anatase content. Our overall results of the XRR analyses are consistent with those derived from the imaging techniques (SEM and AFM).

  10. Spin-resolved photoemission study of epitaxially grown MoSe 2 and WSe 2 thin films

    DOE PAGES

    Mo, Sung-Kwan; Hwang, Choongyu; Zhang, Yi; ...

    2016-09-12

    Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin–orbit coupling. Here, we report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. Furthermore, we only found spin polarization in the single- and trilayer samples—not in the bilayer sample—mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spinmore » and orbital degrees of freedom in this class of material.« less

  11. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Chandel, Tarun; Singh, Joginder; Rajaram, P.

    2015-08-01

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  12. Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-24

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  13. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  14. Reliable thin film encapsulation for organic light emitting diodes grown by low-temperature atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schneidenbach, D.; Winkler, T.; Hamwi, S.; Weimann, T.; Hinze, P.; Ammermann, S.; Johannes, H.-H.; Riedl, T.; Kowalsky, W.

    2009-06-01

    We report on highly efficient gas diffusion barriers for organic light emitting diodes (OLEDs). Nanolaminate (NL) structures composed of alternating Al2O3 and ZrO2 sublayers grown by atomic layer deposition at 80 °C are used to realize long-term stable OLED devices. While the brightness of phosphorescent p-i-n OLEDs sealed by a single Al2O3 layer drops to 85% of the initial luminance of 1000 cd/m2 after 1000 h of continuous operation, OLEDs encapsulated with the NL retain more than 95% of their brightness. An extrapolated device lifetime substantially in excess of 10 000 h can be achieved, clearly proving the suitability of the NLs as highly dense and reliable thin film encapsulation of sensitive organic electronic devices.

  15. Morphology of TiN thin films grown on MgO(001) by reactive dc magnetron sputtering

    SciTech Connect

    Ingason, A. S.; Magnus, F.; Olafsson, S.; Gudmundsson, J. T.

    2010-07-15

    Thin TiN films were grown by reactive dc magnetron sputtering on single-crystalline MgO(001) substrates at a range of temperatures from room temperature to 600 deg. C. Structural characterization was carried out using x-ray diffraction and reflection methods. TiN films grow epitaxially on the MgO substrates at growth temperatures of 200 deg. C and above. The crystal coherence length determined from Laue oscillations and the Scherrer method agrees with x-ray reflection thickness measurements to 6% and within 3% for growth temperatures of 200 and 600 deg. C, respectively. For lower growth temperatures the films are polycrystalline but highly textured and porous.

  16. Thermal and irradiation induced interdiffusion in magnetite thin films grown on magnesium oxide (0 0 1) substrates

    NASA Astrophysics Data System (ADS)

    Kim-Ngan, N.-T. H.; Balogh, A. G.; Meyer, J. D.; Brötz, J.; Zając, M.; Ślęzak, T.; Korecki, J.

    2009-05-01

    Epitaxial Fe 3O 4(0 0 1) thin films (with a thickness in the range of 10-20 nm) grown on MgO substrates were characterized using low-energy electron diffraction (LEED), conversion electron Mössbauer spectroscopy (CEMS) and investigated using Rutherford backscattering spectrometry (RBS), channeling (RBS-C) experiments and X-ray reflectometry (XRR). The Mg out-diffusion from the MgO substrate into the film was observed for the directly-deposited Fe 3O 4/MgO(0 0 1) films. For the Fe 3O 4/Fe/MgO(0 0 1) films, the Mg diffusion was prevented by the Fe layer and the surface layer is always a pure Fe 3O 4 layer. Annealing and ion beam mixing induced a very large interface zone having a spinel and/or wustite formula in the Fe 3O 4-on-Fe film system.

  17. Study of optical and structural properties of CZTS thin films grown by co-evaporation and spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Moreno, R.; Ramirez, E. A.; Gordillo Guzmán, G.

    2016-02-01

    Results regarding optical and structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation using a novel procedure are compared with those obtained with CZTS films grown using a solution based route. The lattice strain ε and crystallite size D of CZTS films prepared by co-evaporation and by spray pyrolysis were estimated through X-ray diffraction (XRD) measurements using Williamson-Hall-isotropic strain model. The results of estimated average crystallite size of CZTS films by Scherrer and Williamson-Hall plot methods were compared with AFM (atomic force microscopy) measurements. It was found that the average crystallite size measured by Williamson-Hall plot methods agree quite well with AFM results. Further, information regarding the influence of preparation method on both, crystalline phases and the formation of structural defects was achieved through Raman and Urbach energy measurements.

  18. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  19. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  20. Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Jermain, C. L.; Paik, H.; Aradhya, S. V.; Buhrman, R. A.; Schlom, D. G.; Ralph, D. C.

    2016-11-01

    We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu3Fe5O12) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of 11.1 (9 )×10-4 for 5.3 nm films and 32 (3 )×10-4 for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.

  1. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  2. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  3. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  4. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

    PubMed

    Singh, Shaivalini; Chakrabarti, P

    2012-03-01

    We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

  5. Mechanism of Charge Transport in Cobalt and Iron Phthalocyanine Thin Films Grown by Molecular Beam Epitaxy

    SciTech Connect

    Kumar, Arvind; Samanta, Soumen; Singh, Ajay; Debnath, A. K.; Aswal, D. K.; Gupta, S. K.

    2011-12-12

    Cobalt phthalocyanine (CoPc), iron phthalocyanine (FePc) and their composite (CoPc-FePc) films have been grown by molecular beam epitaxy (MBE). Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscope (SEM) studies showed that composite films has better structural ordering compared to individual CoPc and FePc films. The temperature dependence of resistivity (in the temperature range 25 K- 100 K) showed that composite films are metallic, while individual CoPc and FePc films are in the critical regime of metal-to-insulator (M-I) transition The composite films show very high mobility of 110 cm{sup 2} V{sup -1} s{sup -1} at room temperature i.e. nearly two order of magnitude higher compared to pure CoPc and FePc films.

  6. Enhanced photocatalytic performance in atomic layer deposition grown TiO{sub 2} thin films via hydrogen plasma treatment

    SciTech Connect

    Sasinska, Alexander; Singh, Trilok; Wang, Shuangzhou; Mathur, Sanjay; Kraehnert, Ralph

    2015-01-15

    The authors report the effect of hydrogen plasma treatment on TiO{sub 2} thin films grown by atomic layer deposition as an effective approach for modifying the photoanode materials in order to enhance their photoelectrochemical performance. Hydrogen plasma treated TiO{sub 2} thin films showed an improved absorption in the visible spectrum probably due to surface reduction. XPS analysis confirmed the formation of Ti{sup 3+} states upon plasma treatment. Hydrogen plasma treatment of TiO{sub 2} films enhanced the measured photocurrent densities by a factor of 8 (1 mA/cm{sup 2} at 0.8 V versus normal hydrogen electrode) when compared to untreated TiO{sub 2} (0.12 mA/cm{sup 2}). The enhancement in photocurrent is attributed to the formation of localized electronic states in mid band-gap region, which facilitate efficient separation and transportation of photo excited charge carriers in the UV region of electromagnetic spectrum.

  7. Anomalous thickness-dependent optical energy gap of ALD-grown ultra-thin CuO films

    NASA Astrophysics Data System (ADS)

    Tripathi, T. S.; Terasaki, I.; Karppinen, M.

    2016-11-01

    Usually an inverse square relation between the optical energy gap and the size of crystallites is observed for semiconducting materials due to the strong quantum localization effect. Coulomb attraction that may lead to a proportional dependence is often ignored or considered less important to the optical energy gap when the crystallite size or the thickness of a thin film changes. Here we report a proportional dependence between the optical energy gap and the thickness of ALD-grown CuO thin films due to a strong Coulomb attraction. The ultrathin films deposited in the thickness range of 9-81 nm show a p-type semiconducting behavior when analyzed by Seebeck coefficient and electrical resistivity measurements. The indirect optical energy gap nature of the films is verified from UV-vis spectrophotometric measurements. A progressive increase in the indirect optical energy gap from 1.06 to 1.24 eV is observed with the increase in the thickness of the films. The data are analyzed in the presence of Coulomb attractions using the Brus model. The optical energy gap when plotted against the cubic root of the thickness of the films shows a linear dependence.

  8. Magnetorefractive effect in the La1-xKxMnO3 thin films grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Bessonov, V. D.; Gan'shina, E. A.; Kaul', A. R.; Korsakov, I. E.; Perov, N. S.; Fetisov, L. Yu.; Yurasov, A. N.

    2014-10-01

    Thin epitaxial La1-хKхMnO3 films were grown using two-stage procedure. Influence of substitution of La3+ ions with K+ ions on the optical and electrical properties of La1-xKxMnO3 films (х=0.05, 0.10, 0.15 и 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La1-xKxMnO3 with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range.

  9. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    SciTech Connect

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y.; Amin, N.

    2015-05-15

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

  10. Random lasing of ZnO thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Cachoncinlle, C.; Hebert, C.; Perrière, J.; Nistor, M.; Petit, A.; Millon, E.

    2015-05-01

    Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10-2 oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm-2, a value lower than those classically reported for pulsed-laser deposition thin films.

  11. Biocompatible Mn2+-doped carbonated hydroxyapatite thin films grown by pulsed laser deposition.

    PubMed

    György, E; Toricelli, P; Socol, G; Iliescu, M; Mayer, I; Mihailescu, I N; Bigi, A; Werckman, J

    2004-11-01

    Mn(2+)-doped carbonated hydroxyapatite (Mn-CHA) thin films were obtained by pulsed laser deposition on Ti substrates. The results of the performed complementary diagnostic techniques, X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy investigations indicate that the films are crystalline with a Ca/P ratio of about 1.64-1.66. The optimum conditions, when nearly stoichiometric crystalline thin films were deposited, were found to be 10 Pa oxygen pressure, 400 degrees C substrate temperature, and postdeposition heat treatment in water vapors at the same substrate temperature. The films were seeded with L929 fibroblast and hFOB1.19 osteoblast cells and subjected to in vitro tests. Both fibroblast and osteoblast cells have a good adherence on the Mn-CHA film and on the Ti or polystyrene references. Proliferation and viability tests showed that osteoblast cells growth on Mn-CHA-coated Ti was enhanced as compared to uncoated pure Ti surfaces. Caspase-1 activity was not affected significantly by the material, showing that Mn-CHA does not induce apoptosis of cultured cells. These results demonstrate that Mn-CHA films on Ti should provoke a faster osteointegration of the coated implants as compared to pure Ti. (c) 2004 Wiley Periodicals, Inc. J Biomed Mater Res 71A: 353-358, 2004.

  12. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  13. Reduced Cu concentration in CuAl-LPE-grown thin Si layers

    SciTech Connect

    Wang, T.H.; Ciszek, T.F.; Asher, S.; Reedy, R.

    1995-08-01

    Cu-Al has been found to be a good solvent system to grow macroscopically smooth Si layers with thicknesses in tens of microns on cast MG-Si substrates by liquid phase epitaxy (LPE) at temperatures near 900{degrees}C. This solvent system utilizes Al to ensure good wetting between the solution and substrate by removing silicon native oxides, and employs Cu to control Al doping into the layers. Isotropic growth is achieved because of a high concentration of solute silicon in the solution and the resulting microscopically rough interface. The incorporation of Cu in the Si layers, however, was a concern since Cu is a major solution component and is generally regarded as a bad impurity for silicon devices due to its fast diffusivity and deep energy levels in the band gap. A study by Davis shows that Cu will nonetheless not degrade solar cell performance until above a level of 10{sup 17} cm{sup -3}. This threshold is expected to be even higher for thin layer silicon solar cells owing to the less stringent requirement on minority carrier diffusion length. But to ensure long term stability of solar cells, lower Cu concentrations in the thin layers are still preferred.

  14. Advanced APCVD-processes for high-temperature grown crystalline silicon thin film solar cells.

    PubMed

    Driessen, Marion; Merkel, Benjamin; Reber, Stefan

    2011-09-01

    Crystalline silicon thin film (cSiTF) solar cells based on the epitaxial wafer-equivalent (EpiWE) concept combine advantages of wafer-based and thin film silicon solar cells. In this paper two processes beyond the standard process sequence for cSiTF cell fabrication are described. The first provides an alternative to wet chemical saw damage removal by chemical vapor etching (CVE) with hydrogen chloride in-situ prior to epitaxial deposition. This application decreases the number of process and handling steps. Solar cells fabricated with different etching processes achieved efficiencies up to 14.7%. 1300 degrees C etching temperature led to better cell results than 1200 degrees C. The second investigated process aims for an improvement of cell efficiency by implementation of a reflecting interlayer between substrate and active solar cell. Some characteristics of epitaxial lateral overgrowth (ELO) of a patterned silicon dioxide film in a lab-type reactor constructed at Fraunhofer ISE are described and first solar cell results are presented.

  15. Properties of ZrB2 Thin Films Grown by E-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Lad, Robert; Stewart, David; Sell, Julia; Bernhardt, George; Frankel, David; University of Maine Team

    2014-03-01

    Zirconium diboride (ZrB2) is a candidate material for many high temperature applications because it has a high melting point, high hardness, thermal shock resistance, and metallic conductivity. However, very little work has been reported concerning growth of ZrB2 thin films and high temperature oxidation behavior. In this study, ZrB2 films with nominal thickness of 200 nm have been deposited using electron-beam evaporation of either ZrB2 pellets or elemental B and Zr sources. The ZrB2 source yields a film that has a 1:1 Zr:B average composition as measured by X-ray photoelectron spectroscopy, consisting of ZrB2 precipitates within an amorphous Zr matrix as determined by X-ray diffraction. Use of elemental B and Zr sources allows precise control of film growth over a range of stoichiometries and yields ZrB2 films with much lower oxygen contamination. After annealing ZrB2 films to 1200°C in air, oxidation leads to a loss of B and formation of a textured monoclinic ZrO2 phase. Several strategies, including deposition of a thin Al2O3 capping layer over the ZrB2 film are being pursued in an attempt to stabilize the electrically conductive ZrB2 phase at high temperature, where it can be used for high temperature electronic devices in harsh environments. Supported by NSF grant # 1309983.

  16. Effects of Precursor Concentration on Structural and Optical Properties of ZnO Thin Films Grown on Muscovite Mica Substrates by Sol-Gel Spin-Coating.

    PubMed

    Kim, Younggyu; Leem, Jae-Young

    2016-05-01

    The structural and optical properties of the ZnO thin films grown on mica substrates for different precursor concentrations were investigated. The surface morphologies of all the samples indicated that they consisted of granular structures with spherical nano-sized crystallites. The thickness of the ZnO thin films increased significantly and the optical band gap exhibited a blue shift with an increase in the precursor concentration. It is remarkable that the highest I(NBE)/I(DLE) ratio was observed for the ZnO thin film with 0.8 M precursor concentration, even though cracks formed on the surface of this film.

  17. Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

    PubMed Central

    Blumenstein, Nina J; Streb, Fabian; Walheim, Stefan; Schimmel, Thomas; Bill, Joachim

    2017-01-01

    Biomaterials are used as model systems for the deposition of functional inorganic materials under mild reaction conditions where organic templates direct the deposition process. In this study, this principle was adapted for the formation of piezoelectric ZnO thin films. The influence of two different organic templates (namely, a carboxylate-terminated self-assembled monolayer and a sulfonate-terminated polyelectrolyte multilayer) on the deposition and therefore on the piezoelectric performance was investigated. While the low negative charge of the COOH-SAM is not able to support oriented attachment of the particles, the strongly negatively charged sulfonated polyelectrolyte leads to texturing of the ZnO film. This texture enables a piezoelectric performance of the material which was measured by piezoresponse force microscopy. This study shows that it is possible to tune the piezoelectric properties of ZnO by applying templates with different functionalities. PMID:28243568

  18. Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges

    NASA Astrophysics Data System (ADS)

    Andújar, J. L.; Bertran, E.; Canillas, A.; Campmany, J.; Serra, J.; Roch, C.; Lloret, A.

    1992-02-01

    Hydrogenated amorphous silicon (a-Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a-Si:H from SQWM rf discharges through their influence on powder particle formation.

  19. STM studies of GeSi thin layers epitaxially grown on Si(111)

    NASA Astrophysics Data System (ADS)

    Motta, N.; Sgarlata, A.; De Crescenzi, M.; Derrien, J.

    1996-08-01

    Ge/Si alloys were prepared in UHV by solid phase epitaxy on Si(111) substrates. The alloy formation, as a function of the evaporation rate and the Ge layer thickness has been followed in situ by RHEED and scanning tunneling microscopy. The 5 × 5 surface reconstruction appeared after annealing at 450°C Ge layers (up to 10 Å thick), obtained from a low rate Knudsen cell evaporator. In this case a nearly flat and uniform layer of reconstructed alloy was observed. When using an e-gun high rate evaporator we needed to anneal the Ge layer up to 780°C to obtain a 5 × 5 reconstruction. The grown layer was not flat, with many steps and Ge clusters; at high coverages (10 Å and more) large Ge islands appeared. Moreover, we then succeeded in visualizing at atomic resolution the top of some of these Ge islands which displayed a 2 × 1 reconstruction, probably induced from the high compressive strain due to the lattice mismatch with the substrate. We suggest that this unusual behavior could be connected to the high evaporation rate, which helped the direct formation of Ge microcrystals on the Si substrate during the deposition process.

  20. Magnetic phases of thin Fe films grown on stepped Cr(001)

    SciTech Connect

    Escorcia-Aparicio, E.J.; Wolfe, J.H.; Choi, H.J.; Ling, W.L.; Kawakami, R.K.; Qiu, Z.Q.

    1999-05-01

    Magnetic phases of Fe films grown on curved Cr(001) with steps parallel to [100] are studied using the surface magneto-optic Kerr effect (SMOKE). We found that the atomic steps (1) induce an in-plane uniaxial magnetic anisotropy with the easy magnetization axis parallel to the step edges, and (2) generate magnetic frustration either inside the Fe film or at the Fe-Cr interface, depending on the Fe film thickness and the vicinal angle. For thickness greater than 35 {Angstrom}, the Fe film forms a single magnetic domain and undergoes an in-plane magnetization switching due to the competition of the step-induced anisotropy and the Fe-Cr interfacial frustration. For thickness less than 35 {Angstrom}, the Fe film forms multiple magnetic domains at low vicinal angle, and transforms into a single domain at high vicinal angle. A magnetic phase diagram in the 30{endash}45 {Angstrom} thickness range was obtained using a wedge-shaped Fe film. {copyright} {ital 1999} {ital The American Physical Society}

  1. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    NASA Astrophysics Data System (ADS)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  2. Thermally driven stability of octadecylphosphonic acid thin films grown on SS316L.

    PubMed

    Lim, Min Soo; Smiley, Katelyn J; Gawalt, Ellen S

    2010-01-01

    Stainless steel 316L is widely used as a biomedical implant material; however, there is concern about the corrosion of metallic implants in the physiological environment. The corrosion process can cause mechanical failure due to resulting cracks and cavities in the implant. Alkyl phosphonic acid forms a thin film by self-assembly on the stainless steel surface and this report conclusively shows that thermal treatment of the octadecylphosphonic acid (ODPA) film greatly enhances the stability of the ODPA molecules on the substrate surface. AFM images taken from the modified substrates revealed that thermally treated films remain intact after methanol, THF, and water flushes, whereas untreated films suffer substantial loss. Water contact angles also show that the hydrophobicity of thermally treated films does not diminish after being incubated in a dynamic flow of water for a 3-hour period, whereas the untreated film becomes increasingly hydrophilic due to loss of ODPA. IR spectra taken of both treated and untreated films after water and THF flushes show that the remaining film retains its initial crystallinity. A model is suggested to explain the stability of ODPA film enhanced by thermal treatment. An ODPA molecule is physisorbed to the surface weakly by hydrogen bonding. Heating drives away water molecules leading to the formation of strong monodentate or mixed mono/bi-dentate bonds of ODPA molecule to the surface.

  3. Structural Characteristics of La2O3 Thin Film Grown on LaB6

    NASA Astrophysics Data System (ADS)

    Kafadaryan, Y. A.; Petrosyan, S. I.; Badalyan, G. R.; Lazaryan, V. G.; Shirinyan, G. H.; Aghamalyan, N. R.; Hovsepyan, R. K.; Semerjian, H. S.; Igityan, A. S.; Kuzanyan, A. M.

    Within the framework of hexagonal lanthanum oxide (h-La2O3) formation, lanthanum hexaboride film on sapphire substrate (LaB6/Al2O3) was oxidized at different temperatures (700-1000 °C) under reduced atmospheric pressure (1·10-2,1.5·10-1Torr) during 30 min. The composition evolution of La2O3/LaB6 structure versus annealing temperature has been studied using XRD, FIR reflectivity spectroscopy, SEM and electron probe X-ray microanalysis (EDS). The annealing of the LaB6 film at T=700 °C under air pressure of 1·10-2 Torr generates thin La2O3 layer which exhibits as inferred from XRD the hexagonal phase. The hydratation of La2O3/LaB6/Al2O3 in distilled water for 30 min and postannealing at 900 °C under air pressure of 1.5·10-1 Torr transform h-La2O3 into hexagonal La(OH)3 phase accompanied monoclinic LaO(OH) and lanthanum oxide carbonate hydrate species.

  4. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  5. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  6. Thermally Driven Stability of Octadecylphosphonic Acid Thin Films Grown on SS316L

    PubMed Central

    Lim, Min Soo; Smiley, Katelyn J.; Gawalt, Ellen S.

    2010-01-01

    Stainless steel 316L is widely used as a biomedical implant material; however, there is concern about the corrosion of metallic implants in the physiological environment. The corrosion process can cause mechanical failure due to resulting cracks and cavities in the implant. Alkyl phosphonic acid forms a thin film by self-assembly on the stainless steel surface and this report conclusively shows that thermal treatment of the octadecylphosphonic acid (ODPA) film greatly enhances the stability of the ODPA molecules on the substrate surface. AFM images taken from the modified substrates revealed that thermally treated films remain intact after methanol, THF and water flushes while untreated films suffer substantial loss. Water contact angles also show that the hydrophobicity of thermally treated films does not diminish after being incubated in a dynamic flow of water for a three hour period while the untreated film becomes increasingly hydrophilic due to loss of ODPA. IR spectra taken of both treated and untreated films after water and THF flushes show that the remaining film retains its initial crystallinity. A model is suggested to explain the stability of ODPA film enhanced by thermal treatment. An ODPA molecule is physisorbed to the surface weakly by hydrogen bonding. Heating drives away water molecules leading to the formation of strong monodentate or mixed mono/bi-dentate bonds of ODPA molecule to the surface. PMID:20648546

  7. Resistive switching characteristics and mechanism of thermally grown WOx thin films

    NASA Astrophysics Data System (ADS)

    Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar; Kim, Seonghyun; Shin, Jungho; Kim, Insung; Ignatiev, Alex; Hwang, Hyunsang

    2011-09-01

    Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W memory devices. Thinner film (t ≤ 15 nm) exhibits clockwise switching (CWS) with filamentary characteristics, whereas thicker film (t ≥ 25 nm) exhibits counter-clockwise switching (CCWS) with more homogeneous conduction. Both switching modes are highly reliable and show good cycling endurance. The conduction phenomena in two different switching modes were examined. In the case of CWS, the conduction mechanism changes from Schottky emission to ohmic conduction due to the local bypass of Schottky barrier formed at Pt/WOx interface by oxygen vacancies. Contrary to CWS, CCWS showed a completely different conduction mechanism. The high resistance state is dominated by the Schottky emission at low electric field and by Poole-Frenkel emission at high electric field, whereas the low resistance state exhibits the Schottky emission. Different types of switching behavior might be attributed to the non-homogenous defect distribution across the active layer. A possible conduction sketch for two types switching behaviors is also discussed.

  8. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  9. Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Neha; Rath, Martando; Ilango, S.; Ravindran, T. R.; Ramachandra Rao, M. S.; Dash, S.; Tyagi, A. K.

    2017-01-01

    Piezoelectric response of AlN thin films was investigated in a AlN/Ti/Si(1 0 0) layer structure prepared by ion beam sputter deposition (IBSD) in reactive assistance of N+/\\text{N}2+ ions. The samples were characterized for their microstructure, piezoelectric response and charged defects using high resolution x-ray diffraction (HR-XRD), piezo force microscopy (PFM) and photoluminescence (PL) spectroscopy respectively. Our results show that the films are highly textured along the a-axis and charged native point defects are present in the microstructure. Phase images of these samples obtained from PFM show that the films are predominantly N-polar. The measured values of piezoelectric coefficient d 33(eff) for these samples are as high as 206  ±  20 pm V-1 and 668  ±  60 pm V-1 calculated by piezo response loop for AlN films of a thickness of 235 nm and 294 nm respectively. A mechanism for high d 33(eff) values is proposed with a suitable model based on the charged defects induced enhanced polarization in the dielectric continuum of AlN.

  10. Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

    NASA Astrophysics Data System (ADS)

    Machain, P.; Condó, A. M.; Domenichini, P.; Pozo López, G.; Sirena, M.; Correa, V. F.; Haberkorn, N.

    2015-08-01

    Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni47Mn24Ga29 films grown by sputtering on (0 0 1) MgO using a stoichiometric Ni2MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni2MnGa bulk reference change their chemical composition to Ni49Mn26Ga25. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni-Mn-Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.

  11. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition

    NASA Technical Reports Server (NTRS)

    Fernandez, Felix E.

    1995-01-01

    A peculiarity of the pulsed laser deposition technique of thin-film growth which limits its applicability is the very rapid drop of resulting film thickness as a function of distance from the deposition axis. This is due to the narrow forward peaking of the emission plume characteristic of the laser ablation process. The plume is usually modeled by a cos(sup n) theta function with n greater, and in some cases, much higher, than 1. Based on this behavior, a method is presented to substantially enhance coverage uniformity in substrate zones of the order of the target-substrate distance h, and to within a specified thickness tolerance. Essentially, target irradiation is caused to form an annular emission source instead of the usual spot. By calculating the resulting thickness profiles, an optimum radius s is found for the annular source, corresponding to a given power in the emission characteristic and a given value of h. The radius of this annulus scales with h. Calculated numerical results for optimal s/h ratios corresponding to a wide range of values for n are provided for the case of +/- 1% tolerance in deviation from the thickness at deposition axis. Manners of producing annular illumination of the target by means of conic optics are presented for the case of a laser beam with radially symmetric profile. The region of uniform coverage at the substrate can be further augmented by extension of the method to multiple concentric annular sources. By using a conic optic of novel design, it is shown also how a single-laser beam can be focused onto a target in the required manner. Applicability of the method would be limited in practice by the available laser power. On the other hand, the effective emitting area can be large, which favors extremely high growth rates, and since growth can occur uniformly over the whole substrate for each laser pulse, single-shot depositions with substantial thicknesses are possible. In addition, the simultaneity of growth over the

  12. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  13. Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering

    PubMed Central

    Wang, Wen Jie; Gao, Kuang Hong; Li, Zhi Qing

    2016-01-01

    We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) effect is observed at low temperatures. The observed WAL effect is two dimensional in nature. Applying the Hikami-Larkin-Nagaoka theory, we have obtained the dephasing length. It is found that the temperature dependence of the dephasing length cannot be described only by the Nyquist electron-electron dephasing, in conflict with prevailing experimental results. From the WAL effect, we extract the number of the transport channels, which is found to increase with increasing the thickness of the films, reflecting the thickness-dependent coupling between the top and bottom surface states in topological insulator. On the other hand, the electron-electron interaction (EEI) effect is observed in temperature-dependent conductivity. From the EEI effect, we also extract the number of the transport channel, which shows similar thickness dependence with that obtained from the analysis of the WAL effect. The EEI effect, therefore, can be used to analyze the coupling effect between the top and bottom surface states in topological insulator like the WAL effect. PMID:27142578

  14. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    SciTech Connect

    Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van; Aarts, J.

    2014-08-07

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  15. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Roro, K. T.; Kassier, G. H.; Dangbegnon, J. K.; Sivaraya, S.; Westraadt, J. E.; Neethling, J. H.; Leitch, A. W. R.; Botha, J. R.

    2008-05-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3-4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18-300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V-1 s-1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33-41 meV range and concentration of the order of 1017 cm-3, as well as a total acceptor concentration of mid-1015 cm-3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered.

  16. Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

    NASA Astrophysics Data System (ADS)

    Mesa, F.; Arredondo, C. A.; Vallejo, W.

    2016-03-01

    This work presents the results of synthesis and characterization of polycrystalline n-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

  17. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    SciTech Connect

    Sokolov, N. S. Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  18. Superexchange and iron valence control by off-stoichiometry in yttrium iron garnet thin films grown by pulsed laser deposition

    SciTech Connect

    Dumont, Y.; Keller, N.; Popova, E.; Schmool, D.S.; Bhattacharya, S.; Stahl, B.; Tessier, M.; Guyot, M.

    2005-05-15

    Controlled off-stoichiometric single phase polycrystalline yttrium iron garnet (YIG) thin films have been grown by pulsed laser deposition, adjusting the oxygen partial pressure P{sub O2} between 5 and 400 mTorr. Atomic stoichiometry by RBS shows an oxygen deficiency for P{sub O2}P{sub stoich}. P{sub stoich}=30 mTorr refers to films showing magnetic and structural properties of the bulk stoichiometric YIG. Curie temperature T{sub c} and saturation magnetization 4{pi}Ms decreased for P{sub O2}P{sub stoich}: Increase of Tc (up to +10%) and of 4{pi}Ms (up to +20%) and lattice parameter compression. Microscopic interpretation is given in terms of superexchange interaction and creation and site selectivity of iron vacancies.

  19. Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

    NASA Astrophysics Data System (ADS)

    Gunji, Marika; Marshall, Ann F.; McIntyre, Paul C.

    2011-01-01

    We report on strain relaxation mechanisms in highly compressive-strained (0.67%-2.33% biaxial strain), thin SiGe-on-insulator (SGOI) structures with Ge atomic fraction ranging from 0.18 to 0.81. SGOI layers (8.7-75 nm thickness) were fabricated by selective oxidization of Si from compressively strained SiGe films epitaxially grown on single crystalline Si-on-insulator (SOI) layers. During high temperature oxidation annealing, strain relaxation occurred due to both intrinsic stacking fault (SF) formation and biaxial stress-driven buckling of the SiGe layers through viscous flow of the overlying and underlying SiO2 layers. Transmission electron microscopy (TEM) and x-ray diffraction were performed to confirm the simultaneous occurrence of these two strain relaxation mechanisms. The results indicate that ˜30 % of the observed strain relaxation can be attributed to formation of intrinsic SFs and the remaining strain relaxation to stress-driven buckling of the SiGe layers. In addition, cross-sectional TEM images show that some of the SFs and layer buckling roughness appears to be spatially correlated.

  20. Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Queralt, I.; Ibañez, J.; Marguí, E.; Pujol, J.

    2010-07-01

    The importance of thin films in modern high technology products, such as semiconductors, requires fast and non-destructive analysis. A methodology to determine the thickness of single layers with benchtop energy dispersive X-ray fluorescence (EDXRF) instrumentation is described and tested following analytical validation criteria. The experimental work was carried out on gallium nitride thin films epitaxially grown on sapphire substrate. The results of samples with layers in the range from 400 to 1000 nm exhibit a good correlation with the layer thickness determined by optical reflectance. Spectral data obtained using thin layered samples indicate the possibility to precisely evaluate layer thickness from 5 nm, with a low relative standard deviation (RSD < 2%) of the results. In view of the limits of optical reflectance for very thin layer determination, EDXRF analysis offers the potential for the thickness determination of such kind of samples.

  1. Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process

    PubMed Central

    2014-01-01

    Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2. PACS number: 08.37.-d; 61.72.Mm; 71.35.-y PMID:24397924

  2. Rapid-melt-mediated recrystallization of ZnO thin films grown at low temperature by using KrF excimer laser irradiation

    NASA Astrophysics Data System (ADS)

    Oh, Min-Suk; Seo, Inseok

    2015-11-01

    ZnO thin films with thickness of 150 nm were grown on ITO/glass (ITO-coated glass) substrates by using the radio-frequency (RF) sputtering technique at 400 °C in an Ar atmosphere. An excimer laser irradiation (ELI) treatment was performed on the surface of ZnO thin films at different excimer laser energy densities of 150, 200, and 250 mJ/cm2 in a N2 atmosphere. The ELI treatment promoted the lateral recystallization of the surface area of the ZnO, resulting in a significant improvement of the crystallinity of the ZnO thin films without substrate damage. As-grown ZnO and ELI-treated ZnO thin films were characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). The analyses showed that the ZnO thin film treated with ELI at an excimer laser energy density of 150 mJ/cm2 exhibited the best structural properties.

  3. Ferromagnetism and Ru-Ru distance in SrRuO3 thin film grown on SrTiO3 (111) substrate

    PubMed Central

    2014-01-01

    Epitaxial SrRuO3 thin films were grown on both (100) and (111) SrTiO3 substrates with atomically flat surfaces that are required to grow high-quality films of materials under debate. The following notable differences were observed in the (111)-oriented SrRuO3 films: (1) slightly different growth mode, (2) approximately 10 K higher ferromagnetic transition temperature, and (3) better conducting behavior with higher relative resistivity ratio, than (100)c-oriented SrRuO3 films. Together with the reported results on SrRuO3 thin films grown on (110) SrTiO3 substrate, the different physical properties were discussed newly in terms of the Ru-Ru nearest neighbor distance instead of the famous tolerance factor. PACS 75.70.Ak; 75.60.Ej; 81.15.Fg PMID:24393495

  4. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  5. The Seebeck Coefficient in Oxygen Enriched La2NiO4

    NASA Astrophysics Data System (ADS)

    Bach, Paul; Leboran, Victor; Rivadulla, Francisco

    2013-03-01

    Oxide-based devices show promise for themoelectric applications due to their chemical stability and straightforward fabrication. The La2NiO4+δ system has been predicted to show an increased thermopower coupled with an increased electrical conductivity around δ = 0 . 05 [Pardo et al. PRB 86, 165114 (2012)] that could lead to a large thermoelectric figure of merit (ZT). We investigate the suitability of lanthanum nickelate as a candidate material for high-ZT devices through a systematic study of oxygenated thin films grown by pulsed laser deposition. We report the electrical conductivity, Seebeck coefficient, and structural morphology of La2NiO4 grown in a range of oxidizing atmospheres and discuss their implications for controlled engineering of thermoelectric properties. We have explored the possibility of gate-tuning these systems in order to fabricate single-oxide based devices. This work was supported by the Ministerio de Ciencia e Innovación (Spain), grant MAT2010-16157, and the European Research Council, grant ERC-2010-StG 259082 2D THERMS.

  6. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

    NASA Astrophysics Data System (ADS)

    Martínez, F. L.; Toledano-Luque, M.; Gandía, J. J.; Cárabe, J.; Bohne, W.; Röhrich, J.; Strub, E.; Mártil, I.

    2007-09-01

    Thin films of hafnium oxide (HfO2) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  7. NiO(s) (Bunsenite) is not Available to Alyssum species

    Technology Transfer Automated Retrieval System (TEKTRAN)

    AIMS: To determine if the Ni-hyperaccumulator Alyssum corsicum can absorb Ni from the kinetically inert crystalline mineral NiO(s) (bunsenite). METHODS: A. corsicum and A. montanum plants were grown for 30 days in a serpentine Hoagland solution. NiO was provided at 0 or 0.1 g L-1 (1.34 mmol L-1) ...

  8. Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

    NASA Technical Reports Server (NTRS)

    Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

    1990-01-01

    The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

  9. Thickness dependence of magnetic anisotropy and domains in amorphous Co40Fe40B20 thin films grown on PET flexible substrates

    NASA Astrophysics Data System (ADS)

    Tang, Zhenhua; Ni, Hao; Lu, Biao; Zheng, Ming; Huang, Yong-An; Lu, Sheng-Guo; Tang, Minghua; Gao, Ju

    2017-03-01

    The amorphous Co40Fe40B20 (CoFeB) films (5-200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of 150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film.

  10. MOF-on-MOF heteroepitaxy: perfectly oriented [Zn2(ndc)2(dabco)]n grown on [Cu2(ndc)2(dabco)]n thin films.

    PubMed

    Shekhah, O; Hirai, K; Wang, H; Uehara, H; Kondo, M; Diring, S; Zacher, D; Fischer, R A; Sakata, O; Kitagawa, S; Furukawa, S; Wöll, C

    2011-05-14

    We report the successful heteroepitaxial growth of perfectly oriented hybrid MOF thin films. By employing step-by-step liquid-phase epitaxy (LPE), [Zn(2)(ndc)(2)(dabco)](n) was grown on [Cu(2)(ndc)(2)(dabco)](n), thus demonstrating that the MOF-on-MOF deposition scheme developed for powdered microcrystalline MOF materials can also be applied in connection with LPE for MOF thin films or multilayers. The deposition was monitored by surface plasmon resonance (SPR) spectroscopy, the resulting MOF heterostructures were characterized using IR spectroscopy and different types of X-ray diffraction (XRD)-based techniques. The results suggest that the LPE method is a promising way to fabricate and grow MOF heterostructures, and also demonstrates the potential of [Cu(2)(ndc)(2)(dabco)](n) MOF thin films as substrates for the LPE-based growth of different MOFs on top.

  11. X-ray analysis of strain distribution in two-step grown epitaxial SrTiO{sub 3} thin films

    SciTech Connect

    Panomsuwan, Gasidit E-mail: g.panomsuwan@gmail.com; Takai, Osamu; Saito, Nagahiro

    2014-08-04

    Epitaxial SrTiO{sub 3} (STO) thin films were grown on (001)-oriented LaAlO{sub 3} (LAO) substrates using a two-step growth method by ion beam sputter deposition. An STO buffer layer was initially grown on the LAO substrate at a low temperature of 150 °C prior to growing the STO main layer at 750 °C. The thickness of the STO buffer layer was varied at 3, 6, and 10 nm, while the total film thickness was kept constant at approximately 110 nm. According to x-ray structural analysis, we show that the STO buffer layer plays an essential role in controlling the strain in the STO layer grown subsequently. It is found that the strains in the STO films are more relaxed with an increase in buffer layer thickness. Moreover, the strain distribution in two-step grown STO films becomes more homogeneous across the film thickness when compared to that in directly grown STO film.

  12. Synthesis and frequency-dependent dielectric properties of epitaxial La1.875Sr0.125NiO4 thin films

    SciTech Connect

    Podpirka, Adrian; Tselev, Alexander; Ramanathan, Shriram

    2012-01-01

    Epitaxial thin films of La{sub 1.875}Sr{sub 0.125}NiO{sub 4} (lanthanum strontium nickelate, LSNO) have been synthesized by sputtering onto single crystal oxide substrates and their structural and dielectric properties are reported. High dielectric constants on the order of 10{sup 7} have been measured up to 1 MHz in interdigitated capacitors with a frequency dependence that correlates with substrate imposed strain and texture. The observation of a high dielectric constant albeit with moderate loss tangent at high frequencies motivates further explorations of charge ordering phenomena in such complex oxides and serves to examine size effects on dielectric response by comparison with studies on bulk single crystal LSNO.

  13. Surface oxygen exchange properties of Sr doped La2NiO4+δ as SOFC cathode: Thin-film electrical conductivity relaxation investigation

    DOE PAGES

    Guan, Bo; Li, Wenyuan; Zhang, Xinxin; ...

    2015-06-02

    La2-xSrxNiO4+δ dense films are prepared by a novel spray-modified pressing method. The surface reaction kinetics is investigated via electrical conductivity relaxation (ECR). The layer thickness, 5~10 μm, is much less than the characteristic length of lanthanum nickelates, resulting in surface-controlled situation and allowing more accurate fitting than the traditional pellets ECR on the surface exchange coefficient (k). k for LNO is 1.6×10-5 cm/s in 0.2 atm at 700°C. Sr doping impairs the exchange kinetics, and k of Sr40 is about one order of magnitude smaller than undoped one. Interstitial oxygen and Ni oxidation state are suggested the predominant roles inmore » determining surface kinetics. In conclusion, given the properties of the thin-film herein developed by spray-modified pressing is closer to those in practical porous electrode compared to pulsed laser deposited film in terms of preferential orientation and strain, it warrants the use of such a method in a variety of pertinent investigations.« less

  14. O impurity chemistry in CdS thin-films grown by chemical bath deposition: An investigation with x-ray photoelectron spectroscopy

    SciTech Connect

    Niles, D.W.; Herdt, G.; Al-Jassim, M.

    1997-02-01

    We used x-ray photoelectron spectroscopy to investigate the chemistry of O impurity atoms in CdS thin-films grown for photovoltaic purposes by chemical-bath deposition (CBD). We compared the Cd 3d photoline, O 1s photoline, Cd MNN Auger line, and O KLL Auger line taken from a CBD CdS thin-film, CdS single-crystal reference, Cd metal reference, CdO reference, and Cd(OH){sub 2} reference. This comparison showed that the O present in thin-film CBD CdS is a manifestation of H{sub 2}O incorporated into the film during the CBD growth. Ar{sup +} ion sputtering{emdash}a technique frequently used in thin-film analyses{emdash}preferentially removed S from the CBD CdS thin-film and created CdS{sub 1{minus}x}O{sub x} (x{approximately}0.04) in the surface region from the incorporated O impurity. {copyright} {ital 1997 American Institute of Physics.}

  15. An x-ray photoelectron spectroscopy investigation of O impurity chemistry in CdS thin films grown by chemical bath deposition

    SciTech Connect

    Niles, D.W.; Herdt, G.; Al-Jassim, M.

    1997-02-01

    We used x-ray photoelectron spectroscopy to investigate the chemistry of O impurity atoms in CdS thin films grown for photovoltaic purposes by chemical-bath deposition (CBD). We compared the Cd 3d photoline, O 1s photoline, Cd MNN Auger line, and O KLL Auger line taken from a CBD CdS thin film, CdS single-crystal reference, Cd metal reference, CdO reference, and Cd(OH){sub 2} reference. This comparison showed that the O present in thin-film CBD CdS is a manifestation of H{sub 2}O incorporated into the film during the CBD growth. Ar{sup +} ion sputtering, a technique frequently used in thin-film analyses, preferentially removed S from the CBD CdS thin film and created CdS{sub 1{minus}x}O{sub x} ({ital x}{approximately}0.04) in the surface region from the incorporated O impurity. {copyright} {ital 1997 American Institute of Physics.}

  16. Cation Off-Stoichiometry Leads to High p-Type Conductivity and Enhanced Transparency in Co2ZnO4 and Co2NiO4 Thin Films

    SciTech Connect

    Zakutayev, A.; Paudel, T. R.; Ndione, P. F.; Perkins, J. D.; Lany, S.; Zunger, A.; Ginley, D. S.

    2012-02-15

    We explore the effects of cation off-stoichiometry on structural, electrical, optical, and electronic properties of Co{sub 2}ZnO{sub 4} normal spinel and Co{sub 2}NiO{sub 4} inverse spinel using theoretic and experimental (combinatorial and conventional) techniques, both at thermodynamic equilibrium and in the metastable regime. Theory predicts that nonequilibrium substitution of divalent Zn on nominally trivalent octahedral sites increases net hole density in Co{sub 2}ZnO{sub 4}. Experiment confirms high conductivity and high work function in Co{sub 2}NiO{sub 4} and Zn-rich Co{sub 2}ZnO{sub 4} thin films grown by nonequilibrium physical vapor deposition techniques. High p-type conductivities of Co{sub 2}ZnO{sub 4} (up to 5 S/cm) and Co{sub 2}NiO{sub 4} (up to 204 S/cm) are found over a broad compositional range, they are only weakly sensitive to oxygen partial pressure and quite tolerant to a wide range of processing temperatures. In addition, off-stoichiometry caused by nonequilibrium growth decreases the optical absorption of Co{sub 2}ZnO{sub 4} and Co{sub 2}NiO{sub 4} thin films, although the 500-nm thin films still have rather limited transparency. All these properties as well as high work functions make Co{sub 2}ZnO{sub 4} and Co{sub 2}NiO{sub 4} thin films attractive for technological applications, such as hole transport layers in organic photovoltaic devices or p-type buffer layers in inorganic solar cells.

  17. XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Haider, M. Baseer

    2017-01-01

    Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N2/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn3N2 samples grown at lower N2/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N2/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N2/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N2/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn-N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies.

  18. XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering.

    PubMed

    Haider, M Baseer

    2017-12-01

    Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N2/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn3N2 samples grown at lower N2/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N2/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N2/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N2/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn-N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies.

  19. Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fleischmann, C.; Lieten, R. R.; Hermann, P.; Hönicke, P.; Beckhoff, B.; Seidel, F.; Richard, O.; Bender, H.; Shimura, Y.; Zaima, S.; Uchida, N.; Temst, K.; Vandervorst, W.; Vantomme, A.

    2016-08-01

    Strained Ge1-xSnx thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with high crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated the evolution (and the interplay) of composition, strain, and morphology of strained Ge0.94Sn0.06 films with temperature. We observed a diffusion-driven formation of Sn-enriched islands (and their self-organization) as well as surface depressions (pits), resulting in phase separation and (local) reduction in strain energy, respectively. Remarkably, these compositional and morphological instabilities were found to be the dominating mechanisms to relieve energy, implying that the relaxation via misfit generation and propagation is not intrinsic to compressively strained Ge0.94Sn0.06 films grown by molecular beam epitaxy.

  20. Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy

    SciTech Connect

    Wang, X. Q.; Sun, H. P.; Pan, X. Q.

    2010-10-11

    Epitaxial ZnO thin films were grown on nitrided (0001) sapphire substrates with an intervening GaN layer by rf-plasma-assisted molecular beam epitaxy. It was found that polarity of the ZnO epilayer could be controlled by modifying the GaN interlayer. ZnO grown on a distorted 3-nm-thick GaN interlayer has Zn-polarity while ZnO on a 20-nm-thick GaN interlayer with a high structural quality has O-polarity. High resolution transmission electron microscopy analysis indicates that the polarity of ZnO epilayer is controlled by the atomic structure of the interface between the ZnO buffer layer and the intervening GaN layer.

  1. High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures

    SciTech Connect

    Thomas, Stuart R. E-mail: thomas.anthopoulos@imperial.ac.uk; Lin, Yen-Hung; Faber, Hendrik; Anthopoulos, Thomas D. E-mail: thomas.anthopoulos@imperial.ac.uk; Adamopoulos, George; Sygellou, Labrini; Stratakis, Emmanuel; Pliatsikas, Nikos; Patsalas, Panos A.

    2014-09-01

    We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ∼2 cm{sup 2}/V s.

  2. High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Ito, Toshihide; Okada, Aoi; Uesugi, Kenjiro; Nunoue, Shinya

    2016-02-01

    We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency (EQE) ηEQE of 82% at room temperature and the hot/cold factor (HCF) of 94% have been obtained by using the functional thin AlGaN interlayers in the MQWs in addition to reducing threading dislocation densities (TDDs) in the blue LEDs. An HCF is defined as ηEQE(85°C)/ηEQE(25°C). The blue LED structures were grown by metal-organic chemical vapor deposition on Si (111) substrates. The MQWs applied as an active layer have 8- pairs of InGaN/AlyGa1-yN/GaN (0<=y<=1) heterostructures. Thinfilm LEDs were fabricated by removing the Si (111) substrates from the grown layers. It is observed by high-resolution transmission electron microscopy and three-dimensional atom probe analysis that the 1 nm-thick AlyGa1-yN interlayers, whose Al content is y=0.3 or less, are continuously formed. EQE and the HCFs of the LEDs with thin Al0.15Ga0.85N interlayers are enhanced compared with those of the samples without the interlayers in the low-current-density region. We consider that the enhancement is due to both the reduction of the nonradiative recombination centers and the increase of the radiative recombination rate mediated by the strain-induced hole carriers indicated by the simulation of the energy band diagram.

  3. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    PubMed

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.

  4. High hole concentration Li-doped NiZnO thin films grown by photo-assisted metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Y. D.; Dong, X.; Ma, Z. Z.; Zhang, Y. T.; Wu, B.; Zhuang, S. W.; Zhang, B. L.; Li, W. C.; Du, G. T.

    2016-11-01

    High hole concentration Li-doped NiZnO thin films were grown by metal-organic chemical vapor deposition (MOCVD). The crystalline, optical, electrical, and morphological characteristics of the NiZnO films were studied as a function of lithium content. The resistance of the films decreased and the hole concentration greatly increased with increasing lithium content. However, the crystalline and optical properties were observed to degrade as the lithium content was increased. To relieve the degradation, a photo-assisted MOCVD method was used in order to restrict this degradation and this represents a new way to obtain stable high hole concentration NiZnO films.

  5. Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition.

    PubMed

    Koehl, Annemarie; Kajewski, Dariusz; Kubacki, Jerzy; Lenser, Christian; Dittmann, Regina; Meuffels, Paul; Szot, Kristof; Waser, Rainer; Szade, Jacek

    2013-06-07

    We present an X-ray absorption spectroscopy study on Fe-doped SrTiO3 thin films grown by pulsed laser deposition. The Fe L2,3 edge spectra are recorded for doping concentrations from 0-5% after several annealing steps at moderate temperatures. The Fe valence state is determined by comparison with an ilmenite reference sample and calculations according to the charge transfer multiplet model. We found clear evidence of Fe(2+) and Fe(3+) oxidation states independently of the doping concentration. The Fe(2+) signal is enhanced at the surface and increases after annealing. The Fe(2+) configuration is in contrast to the mixed Fe(3+)/Fe(4+) valence state in bulk material and must be explained by the specific defect structure of the thin films due to the kinetically limited growth which induces a high concentration of oxygen vacancies.

  6. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  7. Direct observation of fatigue in epitaxially grown Pb(Zr,Ti)O3 thin films using second harmonic piezoresponse force microscopy

    SciTech Connect

    Murari, Nishit M; Hong, Seungbum; Lee, Ho Nyung; Katiyar, Ram S.

    2011-01-01

    Here, we present a direct observation of fatigue phenomena in epitaxially grown Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} (PZT) thin films using second harmonic piezoresponse force microscopy (SH-PFM). We observed strong correlation between the SH-PFM amplitude and phase signals with the remnant piezoresponse at different switching cycles. The SH-PFM results indicate that the average fraction of switchable domains decreases globally and the phase delays of polarization switching differ locally. In addition, we found that the fatigue developed uniformly over the whole area without developing region-by-region suppression of switchable polarization as in polycrystalline PZT thin films.

  8. Positive magnetoresistance in ferromagnetic Nd-doped In{sub 2}O{sub 3} thin films grown by pulse laser deposition

    SciTech Connect

    Xing, G. Z. Yi, J. B.; Li, S.; Yan, F.; Wu, T.

    2014-05-19

    We report the magnetic and magnetotransport properties of (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In{sub 0.985}Nd{sub 0.015}){sub 2}O{sub 2.89} thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe.

  9. Thin films of metal oxides grown by chemical vapor deposition from volatile transition metal and lanthanide metal complexes

    NASA Astrophysics Data System (ADS)

    Pollard, Kimberly Dona

    1998-08-01

    This thesis describes the synthesis and characterization of novel volatile metal-organic complexes for the chemical vapor deposition (CVD) of metal oxides. Monomeric tantalum complexes, lbrack Ta(OEt)sb4(beta-diketonate)) are prepared by the acid-base reaction of lbrack Tasb2(OEt)sb{10}rbrack with a beta-diketone, (RC(O)CHsb2C(O)Rsp' for R = CHsb3, Rsp' = CFsb3; R = Rsp'=C(CHsb3)sb3; R = Csb3Fsb7,\\ Rsp'=C(CHsb3)sb3;\\ R=Rsp'=CFsb3; and R = Rsp' = CHsb3). The products are characterized spectroscopically. Thermal CVD using these complexes as precursors gave good quality Tasb2Osb5 thin films which are characterized by XPS, SEM, electrical measurements, and XRD. Factors affecting the film deposition such as the type of carrier gas and the temperature of the substrate were considered. Catalyst-enhanced CVD reactions with each of the precursors and a palladium catalyst, ((2-methylallyl)Pd(acac)), were studied as a lower temperature route to good quality Tasb2Osb5 films. The decomposition mechanism at the hot substrate surface was studied. Precursors for the formation of yttria by CVD were examined. New complexes of the form (Y(hfac)sb3(glyme)), (hfac = \\{CFsb3C(O)CHC(O)CFsb3\\}sp-,\\ glyme=CHsb3O(CHsb2CHsb2O)sb{n}CHsb3 for n = 1-4) were synthesized and characterized spectroscopically. X-ray structural determinations of three new complexes were obtained. CVD reaction conditions were determined which give YOF films and, with catalyst-enhanced CVD, reaction conditions which give selective formation of Ysb2Osb3, YOF, or YFsb3. The films were studied by XPS, SEM, and XRD. Decomposition mechanisms which lead to film formation, together with a possible route for fluorine atom transfer from the ligand to the metal resulting in fluorine incorporation, were studied by analysis of exhaust products using GC-MS. Novel precursors of the form lbrack Ce(hfac)sb3(glyme)rbrack,\\ (hfac=\\{CFsb3C(O)CHC(O)CFsb3\\}sp-,\\ glyme=CHsb3O(CHsb2CHsb2O)sb{n}CHsb3, n = 1-4) for CVD of ceria were

  10. Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    SciTech Connect

    Belmeguenai, M. Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2014-01-28

    10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  11. Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate.

    PubMed

    Xu, Ji-Ping; Zhang, Rong-Jun; Chen, Zhi-Hui; Wang, Zi-Yi; Zhang, Fan; Yu, Xiang; Jiang, An-Quan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

    2014-01-01

    The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured, respectively, in the photon energy range 1.55 to 5.40 eV. Following the dielectric functions of STO and SRO, the ones of BFO described by the Lorentz model are received by fitting the spectra data to a five-medium optical model consisting of a semi-infinite STO substrate/SRO layer/BFO film/surface roughness/air ambient structure. The thickness and the optical constants of the BFO film are obtained. Then a direct bandgap is calculated at 2.68 eV, which is believed to be influenced by near-bandgap transitions. Compared to BFO films on other substrates, the dependence of the bandgap for the BFO thin film on in-plane compressive strain from epitaxial structure is received. Moreover, the bandgap and the transition revealed by the Lorentz model also provide a ground for the assessment of the bandgap for BFO single crystals.

  12. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  13. Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

    PubMed

    Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

    2009-12-21

    By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

  14. Structural, electrical and optical properties of Dy doped ZnO thin films grown by buffer assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ajimsha, R. S.; Das, A. K.; Singh, B. N.; Misra, P.; Kukreja, L. M.

    2010-04-01

    Transparent conductive dysprosium doped ZnO (Dy:ZnO) thin films with preferential orientation in the (0 0 0 2) direction were deposited on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The experimental results show that the resistivity of Dy:ZnO thin films decreased to a minimum value of ∼7.6×10 -4 Ω cm with increasing Dy concentration up to ∼0.45 at%, then increased with the further increase of Dy concentration. On the contrary, the band gap and carrier concentration of Dy:ZnO thin films initially increased, then decreased with increase of Dy concentration. The blue shift of band gap of Dy:ZnO thin films with increasing carrier concentration was attributed to the competing effects of Burstein-Moss shift and band gap narrowing. A bright room temperature photoluminescence observed at ∼575 nm in all the Dy:ZnO thin films, with maximum intensity at ∼0.45 at% of Dy doping, was attributed to be due to intra-band transitions of Dy 3+ in ZnO. Near band edge photoluminescence of ZnO was observed at ∼380 nm with photoluminescence intensity decreasing with increase of Dy concentration. Such Dy:ZnO thin films are found to be suitable candidate for luminescent device applications.

  15. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    NASA Astrophysics Data System (ADS)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  16. Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95 O thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mavlonov, Abdurashid; Richter, Steffen; von Wenckstern, Holger; Schmidt-Grund, Rüdiger; Lorenz, Michael; Grundmann, Marius

    2016-11-01

    We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8 ×10-4 Ω cm for Mg0.05 Zn0.95 O:Al thin films grown on glass at 300 °C . Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating defects in thermodynamic equilibrium.

  17. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    SciTech Connect

    Hardy, Matthew T. Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.; McConkie, Thomas O.; Smith, David J.; Nepal, Neeraj

    2016-03-15

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

  18. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  19. Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers.

    PubMed

    Tupala, Jere; Kemell, Marianna; Härkönen, Emma; Ritala, Mikko; Leskelä, Markku

    2012-03-30

    Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.

  20. Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers

    NASA Astrophysics Data System (ADS)

    Tupala, Jere; Kemell, Marianna; Härkönen, Emma; Ritala, Mikko; Leskelä, Markku

    2012-03-01

    Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.

  1. NIO1 diagnostics

    NASA Astrophysics Data System (ADS)

    Zaniol, B.; Barbisan, M.; Cavenago, M.; De Muri, M.; Mimo, A.; Pasqualotto, R.; Serianni, G.

    2015-04-01

    The radio frequency ion source NIO1, jointly developed by Consorzio RFX and INFN-LNL, will generate a 60kV-135mA hydrogen negative ion beam, composed of 9 beamlets over an area of about 40 × 40 mm2. This experiment will operate in continuous mode and in conditions similar to those foreseen for the larger ion sources of the Neutral Beam Injectors for ITER. The modular design of NIO1 is convenient to address the several still open important issues related to beam extraction, optics, and performance optimization. To this purpose a set of diagnostics is being implemented. Electric and water cooling plant related measurements will allow monitoring current, pressure, flow, and temperature. The plasma in the source will be characterized by emission spectroscopy, cavity ring-down and laser absorption spectroscopy. The accelerated beam will be analyzed with a fast emittance scanner, its intensity profile and divergence with beam emission spectroscopy and visible tomography. The power distribution of the beam on the calorimeter will be monitored by thermocouples and by an infrared camera. This contribution presents the implementation and initial operation of some of these diagnostics in the commissioning phase of the experiment, in particular the cooling water calorimetry and emission spectroscopy.

  2. NIO1 diagnostics

    SciTech Connect

    Zaniol, B. Barbisan, M.; Pasqualotto, R.; Serianni, G.; Cavenago, M.; De Muri, M.; Mimo, A.

    2015-04-08

    The radio frequency ion source NIO1, jointly developed by Consorzio RFX and INFN-LNL, will generate a 60kV-135mA hydrogen negative ion beam, composed of 9 beamlets over an area of about 40 × 40 mm{sup 2}. This experiment will operate in continuous mode and in conditions similar to those foreseen for the larger ion sources of the Neutral Beam Injectors for ITER. The modular design of NIO1 is convenient to address the several still open important issues related to beam extraction, optics, and performance optimization. To this purpose a set of diagnostics is being implemented. Electric and water cooling plant related measurements will allow monitoring current, pressure, flow, and temperature. The plasma in the source will be characterized by emission spectroscopy, cavity ring-down and laser absorption spectroscopy. The accelerated beam will be analyzed with a fast emittance scanner, its intensity profile and divergence with beam emission spectroscopy and visible tomography. The power distribution of the beam on the calorimeter will be monitored by thermocouples and by an infrared camera. This contribution presents the implementation and initial operation of some of these diagnostics in the commissioning phase of the experiment, in particular the cooling water calorimetry and emission spectroscopy.

  3. High quality nitrogen-doped zinc oxide thin films grown on ITO by sol-gel method

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, Vinod; Purohit, L. P.

    2015-11-01

    Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol-gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×1017 cm-3 and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.

  4. Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

    NASA Astrophysics Data System (ADS)

    Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy

    2014-03-01

    ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800-1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the other hand that silicon acts as a donor in ZnO and not as an amphoteric impurity. In addition, photoluminescence spectra exhibit excitonic recombinations at the same energy for aluminum and silicon, indicating that silicon behaves as an hydrogenic donor in ZnO. Based on these experimental observations, ZnO thin films with a controlled n-type doping in the 1016-1019cm-3 range have been carried out. These results show that MOVPE growth is fully compatible with the achievement of highly Al-doped n-type thin films, but also with the growth of materials with low residual doping, which is a crucial parameter to address ZnO p-type doping issues.

  5. Preparation and structure characterization of SmCo{sub 5}(0001) epitaxial thin films grown on Cu(111) underlayers

    SciTech Connect

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    SmCo{sub 5}(0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al{sub 2}O{sub 3}(0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo{sub 5} crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo{sub 5} epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo{sub 5}(0001) single-crystal thin film is successfully obtained. Nucleation of SmCo{sub 5} crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo{sub 5} layer.

  6. Azo-derivatives thin films grown by matrix-assisted pulsed laser evaporation for non-linear optical applications

    NASA Astrophysics Data System (ADS)

    Constantinescu, C.; Matei, A.; Ionita, I.; Ion, V.; Marascu, V.; Dinescu, M.; Vasiliu, C.; Emandi, A.

    2014-05-01

    Azo-dye compounds, in bulk or as thin films, are extensively studied due to their particular optical properties. These properties include non-linear interaction, e.g. two-photon absorption, optical limiting and all-optical poling, with potential applications in optoelectronics and sensors development. Herein, we report on the deposition of pyrazolone derivatives, namely 1-phenyl-3-methyl-4-(1‧-azo-2‧-sodium carboxylate)-pyrazole-5-one thin films, for applications in second harmonic generation. Matrix-assisted pulsed laser evaporation was employed for layers growth, using a Nd:YAG device operating at 266 nm (4ω). The structure and surface morphology of the deposited films were examined by Fourier transform infrared spectroscopy, atomic force microscopy, and scanning electron microscopy. Spectroscopic-ellipsometry was employed to investigate thin film optical properties. Significant second harmonic generation capabilities of the compound were pointed out by using a femtosecond Ti:sapphire laser.

  7. On the dielectric and optical properties of surface-anchored metal-organic frameworks: A study on epitaxially grown thin films

    NASA Astrophysics Data System (ADS)

    Redel, Engelbert; Wang, Zhengbang; Walheim, Stefan; Liu, Jinxuan; Gliemann, Hartmut; Wöll, Christof

    2013-08-01

    We determine the optical constants of two highly porous, crystalline metal-organic frameworks (MOFs). Since it is problematic to determine the optical constants for the standard powder modification of these porous solids, we instead use surface-anchored metal-organic frameworks (SURMOFs). These MOF thin films are grown using liquid phase epitaxy (LPE) on modified silicon substrates. The produced SURMOF thin films exhibit good optical properties; these porous coatings are smooth as well as crack-free, they do not scatter visible light, and they have a homogenous interference color over the entire sample. Therefore, spectroscopic ellipsometry (SE) can be used in a straightforward fashion to determine the corresponding SURMOF optical properties. After careful removal of the solvent molecules used in the fabrication process as well as the residual water adsorbed in the voids of this highly porous solid, we determine an optical constant of n = 1.39 at a wavelength of 750 nm for HKUST-1 (stands for Hong Kong University of Science and Technology-1; and was first discovered there) or [Cu3(BTC)2]. After exposing these SURMOF thin films to moisture/EtOH atmosphere, the refractive index (n) increases to n = 1.55-1.6. This dependence of the optical properties on water/EtOH adsorption demonstrates the potential of such SURMOF materials for optical sensing.

  8. High performance FeSe0.5Te0.5 thin films grown at low temperature by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yuan, Pusheng; Xu, Zhongtang; Zhang, Haitao; Wang, Dongliang; Ma, Yanwei; Zhang, Ming; Li, Jianqi

    2015-06-01

    We report on fully epitaxial FeSe0.5Te0.5 (FST) thin films of high quality grown on CaF2 (00l) substrate at a low temperature of 300 °C by pulsed laser deposition. The transport Jc of thin films is up to 1.36 MA cm-2 in self-field and 0.97 MA cm-2 in 9 T at 4.2 K, indicating very weak field dependence. A near isotropy of Jc (γ = JcH//ab/JcH//c) as low as 1.09 at 9 T is achieved in the FST thin films. Moreover, there is no clear amorphous interfacial layer between the film and the substrate, probably due to low temperature and low laser repetition rate, while the thickness of the reaction layer is approximate 5 nm in many other works. The transmission electron microscopy evidence shows that some lattices with lateral size <5 nm × 20 nm seem to be disturbed. These location defects are thought to be responsible for the nearly isotropic behavior of the superconductivity.

  9. Magnetotransport phenomena in Bi{sub 2}Se{sub 3} thin film topological insulators grown by hybrid physical chemical vapor deposition

    SciTech Connect

    Kumar, Raj; Hunte, Frank; Brom, Joseph E.; Redwing, Joan M.

    2015-02-14

    Intrinsic defects in Bi{sub 2}Se{sub 3} topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi{sub 2}Se{sub 3} thin films were grown by hybrid physical chemical vapor deposition on (0001) Al{sub 2}O{sub 3} substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to ∼5.75 × 10{sup 18} cm{sup −3} comparable to reported carrier concentration in Bi{sub 2}Se{sub 3} thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated α and l{sub ϕ} values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi{sub 2}Se{sub 3} thin film.

  10. Electron microscopy study of MOCVD-grown TiO sub 2 thin films and TiO sub 2 /Al sub 2 O sub 3 interfaces

    SciTech Connect

    Gao, Y.; Merkle, K.L.; Chang, H.L.M.; Zhang, T.J.; Lam, D. J.

    1990-11-01

    TiO{sub 2} thin films grown on (11{bar 2}0) sapphire at 800{degree}C by the MOCVD technique have been characterized by transmission electron microscopy. The TiO{sub 2} thin films are single crystalline and have the rutile structure. The epitaxial orientation relationship between the TiO{sub 2} thin films (R) and the substrate (S) has been found to be: (101)(0{bar 1}0){sub R}{parallel}(11{bar 2}0)(0001){sub S}. Growth twins in the films are commonly observed with the twin plane {l brace}101{r brace} and twinning direction {l angle}011{r angle}. Detailed atomic structures of the twin boundaries and TiO{sub 2}/{alpha}-Al{sub 2}O{sub 3} interfaces have been investigated by high-resolution electron microscopy (HREM). When the interfaces are viewed in the direction of (0{bar 1}0){sub R}/(0001){sub S}, the interfaces are found to be structurally coherent in the direction of ({bar 1}01){sub R}/(1{bar 1}00){sub S}, in which the lattice mismatch at the interfaces is about 0.5%. 8 refs., 4 figs.

  11. Interaction of oxygen with samarium on Al{sub 2}O{sub 3} thin film grown on Ni{sub 3}Al(111)

    SciTech Connect

    Cheng, Dingling; Xu, Qian E-mail: jfzhu@ustc.edu.cn; Han, Yong; Ye, Yifan; Pan, Haibin; Zhu, Junfa E-mail: jfzhu@ustc.edu.cn

    2014-03-07

    The interaction between oxygen and samarium (Sm) on the well-ordered thin Al{sub 2}O{sub 3} film grown on Ni{sub 3}Al(111) has been investigated by X-ray photoelectron spectroscopy and synchrotron radiation photoemission spectroscopy. At Sm coverage higher than one monolayer, exposure of oxygen to the Sm films at room temperature leads to the formation of both samarium peroxide (O{sub 2}{sup 2−}) states and regular samarium oxide (O{sup 2−}) states. By contrast, when exposing O{sub 2} to Sm film less than one monolayer on Al{sub 2}O{sub 3}, no O{sub 2}{sup 2−} can be observed. Upon heating to higher temperatures, these metastable O{sub 2}{sup 2−} states dissociate, supplying active O atoms which can diffuse through the Al{sub 2}O{sub 3} thin film to further oxidize the underlying Ni{sub 3}Al(111) substrate, leading to the significant increase of the Al{sub 2}O{sub 3} thin film thickness. Therefore, it can be concluded that Sm, presumably in its peroxide form, acts as a catalyst for the further oxidation of the Ni{sub 3}Al substrate by supplying the active oxygen species at elevated temperatures.

  12. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  13. Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

    DOE PAGES

    Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

    2016-11-18

    In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

  14. Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

    SciTech Connect

    Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; Eres, Gyula

    2016-11-18

    In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substrate temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.

  15. Oxygen partial pressure influence on the character of InGaZnO thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Wang, Li

    2012-11-01

    The amorphous oxide semiconductors (AOSs) are promising for emerging large-area optoelectronic applications because of capability of large-area, uniform deposition at low temperatures such as room temperature (RT). Indium-gallium-zinc oxide (InGaZnO) thin film is a promising amorphous semiconductors material in thin film transistors (TFT) for its excellent electrical properties. In our work, the InGaZnO thin films are fabricated on the SiO2 glass using pulsed laser deposition (PLD) in the oxygen partial pressure altered from 1 to 10 Pa at RT. The targets were prepared by mixing Ga2O3, In2O3, and ZnO powder at a mol ratio of 1: 7: 2 before the solid-state reactions in a tube furnace at the atmospheric pressure. The targets were irradiated by an Nd:YAG laser(355nm). Finally, we have three films of 270nm, 230nm, 190nm thick for 1Pa, 5Pa, 10Pa oxygen partial pressure. The product thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall-effect investigation. The comparative study demonstrated the character changes of the structure and electronic transport properties, which is probably occurred as a fact of the different oxygen partial pressure used in the PLD.

  16. Effects of pH on the characteristics of ZnS thin films grown by using the CBD method

    NASA Astrophysics Data System (ADS)

    Ahn, Heejin; Lee, Dongchan; Park, Sujung; Um, Youngho

    In CIGS-based thin film solar cells, a chemically deposited ZnS buffer layer with high resistivity is generally used between the absorber layer and transparent conducting oxide layer. In this work, we report a chemical process to prepare ZnS films by the CBD technique based on the typical bath deposition. The influences of ammonia (NH4OH) and Na2EDTA (Na2C10H16N2O8) as complexing agents on structural, morphological, and optical properties of ZnS thin films are investigated ranging pH concentration from 5 to 10. To investigate effects of pH on the characteristics of ZnS thin films, by using UV-visible transmittance, atomic force microscopy, and optical absorption were investigated. With changing the pH range, the ZnS thin films demonstrate high transmittance of 75~80% in the visible region, indicating the films are potentially useful in photovoltaic applications. The results will be presented in detail. This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education (2011-0024709).

  17. Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    James, K. K.; Krishnaprasad, P. S.; Hasna, K.; Jayaraj, M. K.

    2015-01-01

    In this study the structural and optical properties of lanthanum-doped BaSnO3 powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10-4 mbar, phase pure BaSnO3 films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO3 doped with 0~7 at% of La. The highest conductivity, 9 Scm-1, was obtained for 7 at% La-doped BaSnO3. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO3 thin films.

  18. Control of Phase, Structural and Optical Properties of Tin Sulfide Nanostructured Thin Films Grown via Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Mahdi, Mohamed S.; Ibrahim, K.; Hmood, Arshad; Ahmed, Naser M.; Mustafa, Falah I.

    2017-02-01

    In this study, nanostructured tin sulfide (SnS) thin films were synthesized on glass substrates by means of low-cost chemical bath deposition using non-toxic trisodium citrate (TSC) as complexing agent. The influence of varying molar concentration of TSC (0.15-0.21 M) on the tin sulfide phases was investigated. The structural, morphological and optical properties of the films were studied using x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption spectroscopy. The XRD patterns confirmed an orthorhombic polycrystalline structure of the as-prepared SnS thin films. The values of average crystalline size and texture coefficient of the major XRD peak increased with increasing TSC concentration. The FESEM micrographs revealed that the synthesized thin films are characterized by a flake-stack structure. The Raman spectra of the films showed the presence of a Sn2S3 peak, which gradually declined in intensity until almost disappearing as the TSC concentration increased from 0.15 M to 0.21 M. The direct energy band gaps estimated from ultraviolet-visible-near-infrared absorption spectra also varied between 1.64 eV to 1.1 eV with increasing TSC concentration from 0.15 M to 0.21 M. The results indicate the crucial role of TSC in the synthesis of SnS nanostructured thin films.

  19. Roughness analysis applied to niobium thin films grown on MgO(001) surfaces for superconducting radio frequency cavity applications

    SciTech Connect

    Beringer, D. B.; Roach, W. M.; Clavero, C.; Reece, C. E.; Lukaszew, R. A.

    2013-02-05

    This paper describes surface studies to address roughness issues inherent to thin film coatings deposited onto superconducting radio frequency (SRF) cavities. This is particularly relevant for multilayered thin film coatings that are being considered as a possible scheme to overcome technical issues and to surpass the fundamental limit of ~500 MV/m accelerating gradient achievable with bulk niobium. In 2006, a model by Gurevich [ Appl. Phys. Lett. 88 012511 (2006)] was proposed to overcome this limit that involves coating superconducting layers separated by insulating ones onto the inner walls of the cavities. Thus, we have undertaken a systematic effort to understand the dynamic evolution of the Nb surface under specific deposition thin film conditions onto an insulating surface in order to explore the feasibility of the proposed model. We examine and compare the morphology from two distinct Nb/MgO series, each with its own epitaxial registry, at very low growth rates and closely examine the dynamical scaling of the surface features during growth. Further, we apply analysis techniques such as power spectral density to the specific problem of thin film growth and roughness evolution to qualify the set of deposition conditions that lead to successful SRF coatings.

  20. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  1. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wei, Yaowei; Liu, Hao; Sheng, Ouyang; Liu, Zhichao; Chen, Songlin; Yang, Liming

    2011-08-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO2/Al2O3 films at 110° C and 280° C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100mm Φ samples, and the transmission is more than 99.8% at 1064nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO2/Al2O3 films, the LIDTs were 6.73±0.47J/cm2 and 6.5±0.46J/cm2 at 110° C on fused silica and BK7 substrates, respectively. The LIDTs at 110° C are notably better than 280° C.

  2. Optical and electrical characterization of CdS-Glycine thin films with ammonia free buffer grown at different temperatures for solar cells applications

    NASA Astrophysics Data System (ADS)

    Berman-Mendoza, D.; Quiñones-Urías, D.; Ferra-González, S.; Vera-Marquina, A.; Rojas-Hernández, A.; Gómez Fuentes, R.; García-Juárez, A.; Leal-Cruz, A. L.; Ramos-Carrasco, A.

    2013-11-01

    In this work we report the fabrication and electro-optical characterization of CdS thin films using glycine as complexing agent with ammonia and ammonia free buffer by the Chemical Bath Deposition (CBD) method. The CdS thin films were grown at different temperatures of 50, 60, 70 and 80 °C in a thermal water bath. The morphology of these films was determined using atomic force microscopy; the resultant films were homogeneous, well adhered to the substrate, and specularly reflecting with a varying color depending on the deposition temperature. Transmittance and reflectance measurements of thermally treated CdS films were carried to study the effect of the ammonia buffer on its optical properties and bandgap. The crystallinity of the CdS thin films was determined by means of X Ray diffraction measurements. Therefore, for this study, an ammonia-free complexing agent has been taken for the deposition of CdS. Among different methods, which are being used for the preparation of CdS films, Chemical Bath Deposition (CBD) is the most attractive due to its low cost, easy to handle and large possibilities regarding doping and deposition on various substrates. In particular it can be used to easily obtain field effect devices by depositing CdS thin films over a SiO2/Si substrate. Heterostructures with interesting physical properties can be imagined, realized and tested in this way.. Structures CdS/PbS also were realized and have shown good solar cell characteristics.

  3. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition

    SciTech Connect

    Yao, Dan; Shi, Lei Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-21

    The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  4. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  5. H2 S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode.

    PubMed

    Yassine, Omar; Shekhah, Osama; Assen, Ayalew H; Belmabkhout, Youssef; Salama, Khaled N; Eddaoudi, Mohamed

    2016-12-19

    Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2 S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the in situ growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2 S at concentrations down to 100 ppb, with the lower detection limit around 5 ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2 S vs. CH4 , NO2 , H2 , and C7 H8 as well as an outstanding H2 S sensing stability as compared to other reported MOFs.

  6. Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique

    NASA Astrophysics Data System (ADS)

    Chen, Jiangbo; Wang, Li; Wan, Xiaojing; Su, Xueqiong; Kong, Le

    2010-10-01

    In this paper, the effects of substrate temperature during film growth at relative high temperature have been reported. The IGZO thin films were fabricated by means of pulse laser deposition (PLD) with the InGaZnO (In2O3: Ga2O3: ZnO=1: 1: 8 mol %) target. The substrate temperature altered from room temperature (RT) to 800 °C. The product thin films were characterized rigorously by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-VIS spectrometer, Halleffect investigation and X-ray photoelectron spectroscopy (XPS). The IGZO films was with smooth surface, high transmission in the visible spectral range (about 75-92 %), carrier mobility > 8.0 cm2/(V.s) and carrier concentration at about 1018 cm-3. Finally, the character changes influenced by temperature were obtained from analysis results. This task may benefit to a flat panel display in the process of thin film transistors(TFT) fabrications and improvements.

  7. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

    2017-03-01

    High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

  8. Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

    SciTech Connect

    Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D.; Luysberg, M.

    2013-08-19

    The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

  9. REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

    NASA Astrophysics Data System (ADS)

    Ma, C. B.; Tang, X. G.; Chen, D. G.; Liu, Q. X.; Jiang, Y. P.; Xiong, D. P.; Zhou, Y. C.

    2012-09-01

    A multiferroic heterostructure composed of (Bi0.875Nd0.125)FeO3 (BNF) are grown on (Ba0.65Sr0.35)TiO3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

  10. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V

    2014-11-12

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics.

  11. Spin-resolved photoemission study of epitaxially grown MoSe 2 and WSe 2 thin films

    SciTech Connect

    Mo, Sung-Kwan; Hwang, Choongyu; Zhang, Yi; Fanciulli, Mauro; Muff, Stefan; Hugo Dil, J.; Shen, Zhi-Xun; Hussain, Zahid

    2016-09-12

    Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin–orbit coupling. Here, we report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. Furthermore, we only found spin polarization in the single- and trilayer samples—not in the bilayer sample—mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spin and orbital degrees of freedom in this class of material.

  12. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

    NASA Astrophysics Data System (ADS)

    Sun, Zheng; Ohta, Akio; Miyazaki, Seiichi; Nagamatsu, Kentaro; Lee, Hojun; Olsson, Marc; Ye, Zheng; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-01-01

    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two-dimensional growth step, resulting in 1.2-µm crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices.

  13. Electron spin resonance of Zn{sub 1-x}Mg{sub x}O thin films grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Wassner, T. A.; Stutzmann, M.; Brandt, M. S.; Laumer, B.; Althammer, M.; Goennenwein, S. T. B.; Eickhoff, M.

    2010-08-30

    Zn{sub 1-x}Mg{sub x}O thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn{sub 1-x}Mg{sub x}O epitaxial layers and their anisotropy were determined experimentally and an increase from g{sub ||}=1.957 for x=0 to g{sub ||}=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the Al{sub x}Ga{sub 1-x}N system is also given.

  14. Synthesis of nanocrystalline Cu{sub 2}ZnSnS{sub 4} thin films grown by the spray-pyrolysis technique

    SciTech Connect

    Chandel, Tarun Singh, Joginder; Rajaram, P.

    2015-08-28

    Spray pyrolysis was used to deposit Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  15. Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

    SciTech Connect

    Sengupta, S.; Halder, N.; Chakrabarti, S.

    2010-11-15

    We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 {sup o}C.

  16. Influence of La and Mn vacancies on the electronic and magnetic properties of LaMnO3 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Marozau, Ivan; Das, Proloy T.; Döbeli, Max; Storey, James G.; Uribe-Laverde, Miguel A.; Das, Saikat; Wang, Chennan; Rössle, Matthias; Bernhard, Christian

    2014-05-01

    With pulsed laser deposition, we have grown c axis oriented thin films of the nominal composition LaMnO3 (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain sizeable amounts of La and/or Mn vacancies that strongly influence their electronic and magnetic properties. Specifically, we show that the Mn/La ratio can be systematically varied from 0.92 at 0.11 mbar to 1.09 at 0.30 mbar of oxygen. The cationic vacancies have markedly different effects that become most pronounced once the samples are fully oxygenated and thus strongly hole doped. All as-grown and thus slightly oxygen-deficient LMO films are ferromagnetic insulators with saturation moments in excess of 2.5 μB per Mn ion, their transport and optical properties can be understood in terms of trapped ferromagnetic polarons. Upon oxygen annealing, the most La-deficient films develop a metallic response with an even larger ferromagnetic saturation moment of 3.8 μB per Mn ion. In contrast, in the oxygenated Mn-deficient films, the ferromagnetic order is strongly suppressed to less than 0.5 μB per Mn ion, and the transport remains insulatorlike. We compare our results with the ones that were previously obtained on bulk samples and present an interpretation in terms of the much stronger disruption of the electronic and magnetic structure by the Mn vacancies as compared to the La vacancies. We also discuss the implications for the growth of LMO thin films with well-defined physical properties that are a prerequisite for the study of interface effects in multilayers.

  17. Atomic structure relaxation in nanocrystalline NiO studied by EXAFS spectroscopy: Role of nickel vacancies

    NASA Astrophysics Data System (ADS)

    Anspoks, A.; Kalinko, A.; Kalendarev, R.; Kuzmin, A.

    2012-11-01

    Nanocrystalline NiO samples have been studied using the Ni K-edge extended x-ray absorption fine structure (EXAFS) spectroscopy and recently developed modeling technique, combining classical molecular dynamics with ab initio multiple-scattering EXAFS calculations (MD-EXAFS). Conventional analysis of the EXAFS signals from the first two coordination shells of nickel revealed that (i) the second shell average distance R(Ni-Ni2) expands in nanocrystalline NiO compared to microcrystalline NiO, in agreement with overall unit cell volume expansion observed by x-ray diffraction; (ii) on the contrary, the first shell average distance R(Ni-O1) in nanocrystalline NiO shrinks compared to microcrystalline NiO; (iii) the thermal contribution into the mean-square relative displacement σ2 is close in both microcrystalline and nanocrystalline NiO and can be described by the Debye model; (iv) the static disorder is additionally present in nanocrystalline NiO in both the first Ni-O1 and second Ni-Ni2 shells due to nanocrystal structure relaxation. Within the MD-EXAFS method, the force-field potential models have been developed for nanosized NiO using as a criterion the agreement between the experimental and theoretical EXAFS spectra. The best solutions have been obtained for the 3D cubic-shaped nanoparticle models with nonzero Ni vacancy concentration Cvac: Cvac≈0.4-1.2% for NiO nanoparticles having the cube size of L≈3.6-4.2 nm and Cvac≈1.6-2.0% for NiO thin film composed of cubic nanograins with a size of L≈1.3-2.1 nm. Thus our results show that the Ni vacancies in nanosized NiO play important role in its atomic structure relaxation along with the size reduction effect.

  18. Characteristics of quenched Y-Ba-Cu-O thin films on SrTiO/sub 3/ (100),(110) grown by organometallic chemical vapor deposition

    SciTech Connect

    Tsuruoka, T.; Takahashi, H.; Kawasaki, R.; Kanamori, T.

    1989-05-01

    A thin Y-Ba-Cu-O film was formed by the organometallic chemical vapor deposition (OMCVD) method. The substrates used were (100) and (110) SrTiO/sub 3/. After forming Y-Ba-Cu-O at 800 /sup 0/C, it was cooled at a rate of 100 /sup 0/C/min in O/sub 2/ under 1 atm. This film was c-axis oriented, with its (001) surface grown in parallel to the (100) surface of SrTiO/sub 3/ and T/sub c/ = 88 K. The (110) surface of Y-Ba-Cu-O was grown in parallel to the substrate crystal and T/sub c/ = 84 K on the (110) surface of SrTiO/sub 3/. After forming, these films were quenched in air from 800 /sup 0/C to room temperature. The change in resistance of the quenched sample with temperature was metallic, T/sub onset/ = 75 K, and T/sub c/ = 60 K.

  19. Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

    NASA Astrophysics Data System (ADS)

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Karako, Christine M.; Bruley, John; Frank, Martin M.; Narayanan, Vijay; Demkov, Alexander A.; Ekerdt, John G.

    2014-06-01

    Strontium titanate, SrTiO3 (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5-25 nm. Atomic layer deposition (ALD) is used to grow the LaxSr1-xTiO3 (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (˜225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ˜2.0 × 10-2 Ω cm for 20-nm-thick La:STO (x ˜ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO3 integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

  20. IR emission and electrical conductivity of Nd/Nb-codoped TiOx (1.5 < x < 2) thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Tchiffo-Tameko, C.; Cachoncinlle, C.; Perriere, J.; Nistor, M.; Petit, A.; Aubry, O.; Pérez Casero, R.; Millon, E.

    2016-12-01

    The effect of the co-doping with Nd and Nb on electrical and optical properties of TiOx films is reported. The role of oxygen vacancies on the physical properties is also evidenced. The films are grown by pulsed-laser deposition onto (001) sapphire and (100) silicon substrates. The substrate temperature was fixed at 700 °C. To obtain either stoichiometric (TiO2) or highly oxygen deficient (TiOx with x < 1.6) thin films, the oxygen partial pressure was adjusted at 10-1 and 10-6 mbar, respectively. 1%Nd-1%Nb, 1%Nd-5%Nb and 5%Nd-1%Nb co-doped TiO2 were used as bulk ceramic target. Composition, structural and morphological properties of films determined by Rutherford backscattering spectroscopy, X-ray diffraction and scanning electron microscopy, are correlated to their optical (UV-vis transmission and photoluminescence) and electrical properties (resistivity at room temperature). The most intense Nd3+ emission in the IR domain is obtained for stoichiometric films. Codoping Nd-TiOx films by Nb5+ ions is found to decrease the photoluminescence efficiency. The oxygen pressure during the growth allows to tune the optical and electrical properties: insulating and highly transparent (80% in the visible range) Nd/Nb codoped TiO2 films are obtained at high oxygen pressure, while conductive and absorbent films are grown under low oxygen pressure (10-6 mbar).

  1. Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

    NASA Astrophysics Data System (ADS)

    Fornari, Celso I.; Rappl, Paulo H. O.; Morelhão, Sérgio L.; Abramof, Eduardo

    2016-04-01

    Structural properties of topological insulator bismuth telluride films grown epitaxially on (111) BaF2 with a fixed Bi2Te3 beam flux were systematically investigated as a function of substrate temperature and additional Te flux. A layer-by-layer growth mode is observed since the early stages of epitaxy and remains throughout the whole deposition. Composition of the epitaxial films produced here stays between Bi2Te3 and Bi4Te5, as determined from the comparison of the measured x-ray diffraction curves with calculations. The substrate temperature region, where the growth rate remains constant, is found to be the most appropriate to obtain ordered Bi2Te3 films. Line width of the L = 18 Bi2Te3 diffraction peaks as low as 140 arcsec was obtained, indicating high crystalline quality. Twinning domains density rises with increasing growth temperature and reducing Te extra flux. X-ray reflectivity curves of pure Bi2Te3 films with thickness from 165 to 8 nm exhibited well defined interference fringes, evidencing homogeneous layers with smooth surface. Our results demonstrate that Bi2Te3 films with very well controlled structural parameters can be obtained. High structural quality Bi2Te3 films as thin as only eight quintuple layers grown here are promising candidates for intrinsic topological insulator.

  2. AnGa{sub 2}O{sub 4} Thin-Film Phosphors Grown by Pulsed Laser Ablation

    SciTech Connect

    Lee, Y.E.; Rouleau, C.M.; Park, C.; Norton, D.P.

    1999-04-05

    The growth and properties of undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors on (100) MgO and glass substrates using pulsed laser ablation were investigated. Blue-white and green emission were observed for as-deposited undoped and Mn-doped films, respectively. Luminescent properties as well as crystallinity were considerably affected by processing conditions and film stoichiometry. Films with enhanced luminescent characteristics were obtained on single crystal substrates without post-annealing.

  3. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  4. AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices

    SciTech Connect

    Lin, Chih-Ming; Senesky, Debbie G.; Pisano, Albert P.; Lien, Wei-Cheng; Felmetsger, Valery V.; Hopcroft, Matthew A.

    2010-10-04

    Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 deg. C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices.

  5. Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films

    SciTech Connect

    Noh, J. H.; Jung, H. S.; Lee, J. K.; Kim, J. Y; Cho, C. M.; An, J.; Hong, K. S.

    2008-01-01

    Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

  6. Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

    PubMed Central

    Bai, Gongxun; Zhang, Yang; Hao, Jianhua

    2014-01-01

    We report the tunable near-infrared luminescence of Ni2+ doped SrTiO3 (STO:Ni) thin film grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrate via strain engineering differing from conventional chemical approach. Through controlling the thickness of STO:Ni film, the luminescent properties of the films including emission wavelength and bandwidth, as well as lifetime can be effectively tuned. The observed phenomena can be explained by the variation in the crystal field around Ni2+ ions caused by strain due to the lattice mismatch. Moreover, the modulation of strain can be controlled under an external electric field via converse piezoelectric effect of PMN-PT used in this work. Consequently, controllable emission of the STO:Ni thin film is demonstrated in a reversible and real-time way, arising from the biaxial strain produced by piezoelectric PMN-PT. Physical mechanism behind the observation is discussed. This work will open a door for not only investigating the luminescent properties of the phosphors via piezoelectric platform, but also potentially developing novel planar light sources. PMID:25030046

  7. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  8. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    NASA Astrophysics Data System (ADS)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  9. Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering.

    PubMed

    Bai, Gongxun; Zhang, Yang; Hao, Jianhua

    2014-07-17

    We report the tunable near-infrared luminescence of Ni(2+) doped SrTiO3 (STO:Ni) thin film grown on piezoelectric Pb(Mg(1/3)Nb(2/3))(0.7)Ti(0.3)O3 (PMN-PT) substrate via strain engineering differing from conventional chemical approach. Through controlling the thickness of STO:Ni film, the luminescent properties of the films including emission wavelength and bandwidth, as well as lifetime can be effectively tuned. The observed phenomena can be explained by the variation in the crystal field around Ni(2+) ions caused by strain due to the lattice mismatch. Moreover, the modulation of strain can be controlled under an external electric field via converse piezoelectric effect of PMN-PT used in this work. Consequently, controllable emission of the STO:Ni thin film is demonstrated in a reversible and real-time way, arising from the biaxial strain produced by piezoelectric PMN-PT. Physical mechanism behind the observation is discussed. This work will open a door for not only investigating the luminescent properties of the phosphors via piezoelectric platform, but also potentially developing novel planar light sources.

  10. XPS analysis and structural and morphological characterization of Cu2ZnSnS4 thin films grown by sequential evaporation

    NASA Astrophysics Data System (ADS)

    Gordillo, G.; Calderón, C.; Bartolo-Pérez, P.

    2014-06-01

    This work describes a procedure to grow single phase Cu2ZnSnS4 (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu2SnS3 (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  11. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  12. Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature

    NASA Astrophysics Data System (ADS)

    Park, M. G.; Choi, W. S.; Boo, J.-H.; Kim, Y. T.; Yoon, D. H.; Hong, B.

    2002-06-01

    n this work, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiCa:H) films on annealing temperature (T_a) and radio frquency (RF) power. The substrate temperature (T_s was 250 °C, the RF power was varied from 30 W to 400 W, and the range of T_s, was from 400 °C to 600 °C. The a-SiC:H films were deposited by using PECVD (plasma enhanced chemical vapor deposition) system on Coming glass and p-type Si (100) wafer with a SiH4+CH4 gas tnudiue. The experimental results have shown that the optical band gap energy (E_g) of the aSiC:H thin films changed little with the annealing temperature while Eg increased with the RF power. The Raman spectnrn of the thin films annealed at high temperatures showed that graphitization of carbon clusters and rnicrocrystalline silicon occurs. The current voltage characteristics have shown good electrical properties in relation to the annealed films.

  13. Anisotropic spin structure along the easy axis of magnetization in epitaxially grown MnAs/GaAs(100) thin films

    SciTech Connect

    Song, J. H.; Cui, Y.; Lee, J. J.; Ketterson, J. B.

    2014-05-07

    We grew epitaxial MnAs thin films on GaAs(100) substrates using molecular-beam epitaxy and investigated their magnetic properties. The crystal orientation of the film was type-B. Measurements of the film's magnetization revealed two-fold symmetric magnetic anisotropy on its surface, with the easy and hard directions of magnetization along GaAs[1{sup ¯}10](MnAs[1{sup ¯}1{sup ¯}20]) and GaAs[110](MnAs[11{sup ¯}02]), respectively. We found breakage of the uniaxial anisotropy in magnetization along the easy direction of magnetization for both the magnetization versus magnetic field and magnetization versus temperature measurements. We suggest that the origin of this peculiar pinned ferromagnetism in the MnAs layer is the spin-exchange interaction between the MnAs film and the ultra-thin Mn layer formed at the interface of MnAs film and GaAs(100) substrate.

  14. Characterization of two different orientations of epitaxial niobium thin films grown on MgO(001) surfaces

    SciTech Connect

    Beringer, D. B.; Lukaszew, R. A.; Roach, W. M.; Clavero, C.; Reece, C. E.

    2013-12-14

    Epitaxial Nb thin films deposited onto the same crystalline insulating surface can evolve in very different fashions depending on specific deposition conditions, thereby affecting their microstructure, surface morphology and superconducting properties. Here, we examine and compare the microstructure and ensuing surface morphology from two distinct Nb/MgO series each with its own epitaxial registry—namely Nb(001)/MgO(001) and Nb(110)/MgO(001)—leading to distinct surface anisotropy and we closely examine the dynamical scaling of the surface features during growth. We compare our findings with those in other metal/MgO epitaxial systems and for the first time, general scaling formalism is applied to analyze anisotropic surfaces exhibiting biaxial symmetry. Further, Power Spectral Density is applied to the specific problem of thin film growth and surface evolution to qualify the set of deposition conditions leading to smoother surfaces. We find good correlation between the surface morphology and microstructure of the various Nb films with superconducting properties such as their residual resistance ratio and lower critical field.

  15. Characterization of two different orientations of epitaxial niobium thin films grown on MgO(001) surfaces

    SciTech Connect

    Beringer, Douglas B.; Roach, William M.; Clavero Perez, Cesar; Reece, Charles E.; Lukaszew, Rosa

    2013-12-01

    Epitaxial Nb thin films deposited onto the same crystalline insulating surface can evolve in very different fashions depending on specific deposition conditions, thereby affecting their microstructure, surface morphology and superconducting properties. Here, we examine and compare the microstructure and ensuing surface morphology from two distinct Nb/MgO series each with its own epitaxial registry?namely Nb(001)/MgO(001) and Nb(110)/MgO(001)?leading to distinct surface anisotropy and we closely examine the dynamical scaling of the surface features during growth. We compare our findings with those in other metal/MgO epitaxial systems and for the first time, general scaling formalism is applied to analyze anisotropic surfaces exhibiting biaxial symmetry. Further, Power Spectral Density is applied to the specific problem of thin film growth and surface evolution to qualify the set of deposition conditions leading to smoother surfaces. We find good correlation between the surface morphology and microstructure of the various Nb films with superconducting properties such as their residual resistance ratio and lower critical field.

  16. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  17. Effect of substrate temperature on structure and luminescence properties of YVO4:Eu3+ thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Foka, K. E.; Dejene, B. F.; Swart, H. C.

    2016-03-01

    YVO4:Eu3+ thin films were deposited by pulse laser deposition at substrate temperatures of 200, 300 and 400 °C. The oxygen deposition background pressure was also changed from 20 to 85 mTorr at a substrate temperature of 400 °C. The films deposited at the higher temperatures showed a tetragonal phase in consistent with the standard JCPDS card 17-0341. The X-ray diffraction patterns obtained from the 200 °C sample showed only a very small peak at the (200) orientation. The other phosphor thin film showed an improved crystalline structure when the temperature was increased. Scanning electron microscope images indicated larger particles on the surface at the higher temperatures. Atomic force microscopy results showed smooth surfaces with small particles at lower temperatures and an increase in surface roughness at higher temperatures due to the improvement in crystallinity. The photoluminescence showed the typical emission peaks of Eu3+ in the red region at 594 and 618 nm attributed to the 5D0-7F1 and 5D0-7F2 transitions. The peaks at 652 and 699 nm corresponding to the 5D0-7F3 and 5D0-7F4 transitions were also observed. The spectra showed an increase in PL intensity when the deposition temperature and oxygen pressure were increased.

  18. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  19. Effects of Concentration and Substrate Type on Structure and Conductivity of p-Type CuS Thin Films Grown by Spray Pyrolysis Deposition

    NASA Astrophysics Data System (ADS)

    Sabah, Fayroz A.; Ahmed, Naser M.; Hassan, Z.

    2017-01-01

    Copper sulphide (CuS) thin films were grown upon Ti, indium tin oxide (ITO), and glass substrates by using spray pyrolysis deposition at 200°C. The films exhibited good adhesion compared to chemical bath deposition. CuCl2·2H2O and Na2S2O3·5H2O precursors were used as Cu2+ and S2- sources, respectively. Two concentrations (i.e., 0.2 M and 0.4 M) were selected in this study. X-ray diffraction analysis reveals that the films with 0.2 M showed only the formation of a covellite CuS phase having a hexagonal crystal structure with diffraction peaks of low intensity. For 0.4 M concentration, in addition to the covellite CuS phase, chalcocite Cu2S phase having a hexagonal crystal structure also appeared with relatively higher intensity peaks for all thin films. Field-emission scanning electron microscopy observations showed the formation of small grains for 0.2 M, whereas a mixture of grains with square-like shape and nanoplates were formed for 0.4 M. Depending on the 0.2 M and 0.4 M thin films thicknesses (3.2 μm and 4 μm, respectively), the band gap energy was obtained from optical measurements to be approximately 2.64 eV for 0.2 M (pure CuS phase), which slightly decreased up to 2.56 eV for 0.4 M concentration. Hall effect measurements showed that all grown films are p-type. The 0.2 M film exhibited much lower sheet resistance ( R sh = 33.96 Ω/Sq-55.70 Ω/Sq) compared to 0.4 M film ( R sh = 104.33 Ω/Sq-466.6 Ω/Sq). Moreover, for both concentrations, the films deposited onto ITO substrate showed the lowest sheet resistance ( R sh = 33.96 Ω/Sq-104.33 Ω/Sq).

  20. Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Brockman, J.; Samant, M. G.; Roche, K. P.; Parkin, S. S. P.

    2012-07-01

    We investigate the structural and electronic properties of V2O3 thin films deposited by oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane sapphire substrates. Annealing the substrates before growth to produce ultra-smooth surfaces improved initial epitaxy, according to in situ reflection high-energy electron diffraction. Surprisingly, films deposited on annealed substrates had a more island-like surface, broader x-ray diffraction peaks, and an increased resistivity of V2O3's normally metallic high-temperature phase. We attribute these results to enhanced strain coupling at the interface between the substrate and film, highlighting the vulnerability of V2O3's strongly correlated metallic phase to crystalline defects and structural disorder.

  1. Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Akaiwa, Kazuaki; Kaneko, Kentaro; Ichino, Kunio; Fujita, Shizuo

    2016-12-01

    We achieved the successful fabrication of Sn-doped α-Ga2O3 thin films with higher electron mobility and wider conductivity controls by improving the crystal quality. α-Ga2O3 films showed n-type conductivity with a maximum electron mobility of 24 cm2 V-1 s-1. The carrier concentration was successfully controlled in the range of 1017-1019 cm-3. Crystal defects such as dislocations severely compensate the free carriers in α-Ga2O3 films and restrict the mobility at low carrier concentrations. Therefore, to achieve further conductivity control and higher mobility, improving the crystallinity of α-Ga2O3 films is necessary.

  2. Bias-assisted atomic force microscope nanolithography on NbS2 thin films grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Bark, Hunyoung; Kwon, Sanghyuk; Lee, Changgu

    2016-12-01

    Niobium disulfide, one of the metallic transition metal dichalcogenides, has a high potential as an electrode material for electronic devices made of 2D materials. Here, we investigated the bias-assisted atomic force microscope nanolithography of NbS2 thin films synthesized by chemical vapor deposition. We analyzed the lithographed pattern using Raman spectroscopy, transmission electron microscopy and friction force microscopy. These analyses showed that lines having various widths and thicknesses could be generated using the lithography technique by simply varying the scan speed and applied voltage. These analyses also revealed that the NbS2 film transformed from a layered crystalline structure into an amorphous structure upon being lithographed. By generating four line segments forming a square and measuring I/V curves inside and outside of the square, the electrical properties of the lithographed material were characterized. These analyses indicate that NbS2 became hydrogenated and an insulator upon being lithographed.

  3. Study of high {Tc} superconducting thin films grown by MOCVD. Final report, July 1, 1986--April 30, 1990

    SciTech Connect

    Erbil, A.

    1990-12-31

    Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi{sub 2}Te{sub 3} were deposited, mostly on GaAs. Several YBa{sub 2}Cu{sub 3}O{sub 7} compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10{sup 4}). YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} and Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub y} thin films were deposited by MOCVD on common substrates such as glass.

  4. Solution-grown small-molecule organic semiconductor with enhanced crystal alignment and areal coverage for organic thin film transistors

    DOE PAGES

    Bi, Sheng; He, Zhengran; Chen, Jihua; ...

    2015-07-24

    Drop casting of small-molecule organic semiconductors typically forms crystals with random orientation and poor areal coverage, which leads to significant performance variations of organic thin-film transistors (OTFTs). In this study, we utilize the controlled evaporative self-assembly (CESA) method combined with binary solvent system to control the crystal growth. A small-molecule organic semiconductor,2,5-Di-(2-ethylhexyl)-3,6-bis(5"-n-hexyl-2,2',5',2"]terthiophen-5-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione (SMDPPEH), is used as an example to demonstrate the effectiveness of our approach. By optimizing the double solvent ratios, well-aligned SMDPPEH crystals with significantly improved areal coverage were achieved. As a result, the SMDPPEH based OTFTs exhibit a mobility of 1.6 × 10-2 cm2/V s, which is themore » highest mobility from SMDPPEH ever reported.« less

  5. Solution-grown small-molecule organic semiconductor with enhanced crystal alignment and areal coverage for organic thin film transistors

    SciTech Connect

    Bi, Sheng; He, Zhengran; Chen, Jihua; Li, Dawen

    2015-07-24

    Drop casting of small-molecule organic semiconductors typically forms crystals with random orientation and poor areal coverage, which leads to significant performance variations of organic thin-film transistors (OTFTs). In this study, we utilize the controlled evaporative self-assembly (CESA) method combined with binary solvent system to control the crystal growth. A small-molecule organic semiconductor,2,5-Di-(2-ethylhexyl)-3,6-bis(5"-n-hexyl-2,2',5',2"]terthiophen-5-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione (SMDPPEH), is used as an example to demonstrate the effectiveness of our approach. By optimizing the double solvent ratios, well-aligned SMDPPEH crystals with significantly improved areal coverage were achieved. As a result, the SMDPPEH based OTFTs exhibit a mobility of 1.6 × 10-2 cm2/V s, which is the highest mobility from SMDPPEH ever reported.

  6. Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy

    SciTech Connect

    Monirul Islam, Muhammad; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka

    2013-02-18

    Defects in undoped GaInNAsSb thin film (i-GaInNAsSb) were investigated by junction-capacitance technique using admittance and transient photocapacitance (TPC) spectroscopy. An electron trap D2 was identified at 0.34 eV below the conduction band (E{sub C}) of i-GaInNAsSb using admittance spectroscopy. Optical transition of valance band (E{sub V}) electrons to a localized state OH1 (E{sub V} + 0.75 eV) was manifested in negative TPC signal. Combined activation energy of OH1 and D2 defect corresponds to the band-gap of i-GaInNAsSb, suggesting that OH1/D2 acts as an efficient recombination center. TPC signal at {approx}1.59 eV above E{sub V} was attributed to the nitrogen-induced localized state in GaInNAsSb.

  7. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    NASA Astrophysics Data System (ADS)

    Singh, Amol; Modi, Mohammed H.; Dhawan, Rajnish; Lodha, G. S.

    2014-04-01

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10-5 Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm3, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  8. Influence of flow rate on different properties of diamond-like nanocomposite thin films grown by PECVD

    NASA Astrophysics Data System (ADS)

    Santra, T. S.; Bhattacharyya, T. K.; Tseng, F. G.; Barik, T. K.

    2012-06-01

    Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass substrate using different flow rate of haxamethyldisiloxane (HMDSO) based liquid precursor with nitrogen gas as a glow discharged decomposition by plasma enhanced chemical vapor deposition (PECVD) technique. The significant influence of different precursor flow rates on refractive index and thickness of the DLN films was measured by using spectroscopic filmatrics and DEKTAK profilometer. Optical transparency of the DLN thin films was analyzed by UV-VIS-NIR spectrometer. FTIR spectroscopy, provides the information about shifted bonds like SiC2, Si-C, Si-O, C-C, Si-H, C-H, N-H, and O-H with different precursor flow rate. We have estimated the hardness of the DLN films from Raman spectroscopy using Gaussian deconvolution method and tried to investigate the correlation between hardness, refractive index and thickness of the films with different precursor flow rates. The composition and surface morphology of the DLN films were investigated by X-ray photo electron spectroscopy (XPS) and atomic force microscopy (AFM) respectively. We have analyzed the hardness by intensity ratio (ID/IG) of D and G peaks and correlates with hardness measurement by nanoindentation test where hardness increases from 27.8 μl/min to 80.6μl/min and then decreases with increase of flow rate from 80.6μl/min to 149.5μl/min. Finally, we correlates different parameters of structural, optical and tribological properties like film-thickness, refractive index, light transmission, hardness, surface roughness, modulus of elasticity, contact angle etc. with different precursor flow rates of DLN films.

  9. Boron nitride phosphide thin films grown on quartz substrate by hot-filament and plasma-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Xu, S. Y.; Han, G. R.

    2004-10-01

    Boron nitride phosphide films are, for the first time, grown on transparent quartz substrate by hot filament and radio-frequency plasma co-assisted chemical vapor deposition technique. XPS, XRD, SEM, and UV measurements are performed to study the chemical composition, crystallization, microstructure, and optical absorption, respectively. A centipede-like microstructure and undulating ground morphology on the film surface are observed, and their growth mechanism is speculated upon. The chemical composition is determined as BN1-xPx, whose characteristic XRD peak is preliminarily identified. The optical band gap can be modulated between 5.52 eV and 3.74 eV, simply by adjusting the phosphorus content in BN1-xPx through modifying the PH3 flux during the film-deposition process. The merits of the BN1-xPx film, such as high ultraviolet photoelectric sensitivity with negligible sensitivity in the visible region, modifiable wide optical band gap, and good adhesion on transparent substrate, suggest potential applications for ultraviolet photo-electronics.

  10. Effect of defects on reaction of NiO surface with Pb-contained solution

    NASA Astrophysics Data System (ADS)

    Kim, Jongjin; Hou, Binyang; Park, Changyong; Bahn, Chi Bum; Hoffman, Jason; Black, Jennifer; Bhattacharya, Anand; Balke, Nina; Hong, Hawoong; Kim, Ji Hyun; Hong, Seungbum

    2017-03-01

    In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case of native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution.

  11. Effect of defects on reaction of NiO surface with Pb-contained solution

    PubMed Central

    Kim, Jongjin; Hou, Binyang; Park, Changyong; Bahn, Chi Bum; Hoffman, Jason; Black, Jennifer; Bhattacharya, Anand; Balke, Nina; Hong, Hawoong; Kim, Ji Hyun; Hong, Seungbum

    2017-01-01

    In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case of native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution. PMID:28317881

  12. The effects of oxygen pressure on disordering and magneto-transport properties of Ba{sub 2}FeMoO{sub 6} thin films grown via pulsed laser deposition

    SciTech Connect

    Kim, Kyeong-Won; Mhin, Sungwook; Jones, Jacob L.; Norton, David P.; Ghosh, Siddhartha Buvaev, Sanal; Hebard, Arthur F.

    2015-07-21

    Epitaxial Ba{sub 2}FeMoO{sub 6} thin films were grown via pulsed laser deposition under low oxygen pressure and their structural, chemical, and magnetic properties were examined, focusing on the effects of oxygen pressure. The chemical disorder, off-stoichiometry in B site cations (Fe and Mo) increased with increasing oxygen pressure and thus magnetic properties were degraded. Interestingly, in contrast, negative magneto-resistance, which is the characteristics of this double perovskite material, was enhanced with increasing oxygen pressure. It is believed that phase segregation of highly disordered thin films is responsible for the increased magneto-resistance of thin films grown at high oxygen pressure. The anomalous Hall effect, which behaves hole-like, was also observed due to spin-polarized itinerant electrons under low magnetic field below 1 T and the ordinary electron-like Hall effect was dominant at higher magnetic fields.

  13. Investigation of NbNx thin films and nanoparticles grown by pulsed laser deposition and thermal diffusion

    NASA Astrophysics Data System (ADS)

    Hassan Farha, Ashraf

    Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (lambda = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films. When the fabrication parameters are fixed, except for laser fluence, surface roughness, deposition rate, nitrogen content, and grain size increases with increasing laser fluence. Increasing nitrogen background pressure leads to change in the phase structure of the NbNx films from mixed -Nb 2N and cubic delta-NbN phases to single hexagonal beta- Nb 2N. A change in substrate temperature led to a pronounced change in the preferred orientation of the crystal structure, the phase transformation, surface roughness, and composition of the films. The structural, electronic, and nanomechanical properties of niobium nitride PLD deposited at different nitrogen pressures (26.7-66.7 Pa) on Si(100) were investigated. The NbNx, films exhibited a cubic delta-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The highly-textured delta-NbN films have a Tc up to 15.07 K. The film was deposited at a nitrogen background pressure of 66.7 Pa exhibited improved superconducting properties and showed higher hardness values as compared to films deposited at lower nitrogen pressures. NbN nanoclusters that were deposited on carbon coated Cu-grids using PLD at laser fluence of 8 J/cm2 were observed. Niobium nitride is prepared by heating of Nb sample in a reactive nitrogen atmosphere (133 Pa

  14. Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Bilevych, Ye.; Soshnikov, A.; Darchuk, L.; Apatskaya, M.; Tsybrii, Z.; Vuychik, M.; Boka, A.; Sizov, F.; Boelling, O.; Sulkio-Cleff, B.

    2005-02-01

    Growth of high-quality CdTe thin films by hot-wall epitaxy (HWE) under different temperature conditions and the control of their physical, electrical and structural properties have been examined by various ways. CdTe (1 1 0), Zn 0.04Cd 0.96Te (1 1 1), Hg 0.2Cd 0.8Te (1 1 1), Si (1 1 1) and BaF 2 (1 1 1) were used as substrates. The obtained films have the cut-off wavelength at 0.84-0.85 μm and the transmission of about 55-60% out of the fundamental absorption domain. The current-voltage investigations have shown that the contact properties strongly depend on the contact material and contact fabrication method and less depend on substrate materials. The film-specific resistances (4-7)×10 4 Ω cm were determined. The CdTe deposition (layer thickness about 1000 Å) on Cd xHg 1-xTe resulted in significant increase in photodiodes electrical parameters. All samples showed the crystalline structure according to the XRD data with strong influence on lattice mismatch between CdTe and substrate materials. Atomic force microscope (AFM) investigations have shown a smooth and defect-free surface with a roughness range of 15-100 nm for 50 μm of basic length.

  15. Reaction kinetics of CuInSe2 thin films grown from bilayer InSe/CuSe precursors

    NASA Astrophysics Data System (ADS)

    Kim, S.; Kim, W. K.; Kaczynski, R. M.; Acher, R. D.; Yoon, S.; Anderson, T. J.; Crisalle, O. D.; Payzant, E. A.; Li, S. S.

    2005-03-01

    The reaction kinetics for the formation of CuInSe2 thin films from a stacked bilayer precursor consisting of InSe and CuSe was studied by means of in situ high-temperature x-ray diffraction. In particular, the isothermal phase evolution of the glass/InSe/CuSe precursor was observed at different temperatures. The pathway produces a CuInSe2 diffusion barrier layer that also functions as a nucleation barrier. Hence, amorphous and crystalline phases simultaneously grow during isothermal processing. The shape of the time-resolved fractional reaction curve exhibits a deceleratory behavior, consistent with the presence of a diffusion-controlled reaction mechanism. Analyses based on Avrami and parabolic-rate laws were conducted. The Avrami exponent for each isothermal reaction is in the range 0.5-0.8, which indicates that the growth reaction is dominantly one-dimensional diffusion controlled. The estimated apparent activation energy for this reaction is 66.0 kJ/mol. The results based on the parabolic rate model are consistent with the Avrami analysis, yielding a similar apparent activation energy value, and thus supporting the conclusion that the process is one-dimensional diffusion controlled.

  16. Morphology, composition and electrical properties of SnO{sub 2}:Cl thin films grown by atomic layer deposition

    SciTech Connect

    Cheng, Hsyi-En Wen, Chia-Hui; Hsu, Ching-Ming

    2016-01-15

    Chlorine doped SnO{sub 2} thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl{sub 4} and H{sub 2}O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO{sub 2} films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300 °C-deposited film performed a higher electrical conductivity of 315 S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn{sup 2+} oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.

  17. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition.

    PubMed

    Aldalbahi, Ali; Mkawi, E M; Ibrahim, K; Farrukh, M A

    2016-09-07

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37-1.47 eV.

  18. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-09-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV.

  19. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

    PubMed

    Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

    2014-01-01

    Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

  20. Cu-dependent phase transition in polycrystalline CuGaSe2 thin films grown by three-stage process

    NASA Astrophysics Data System (ADS)

    Islam, M. M.; Yamada, A.; Sakurai, T.; Kubota, M.; Ishizuka, S.; Matsubara, K.; Niki, S.; Akimoto, K.

    2011-07-01

    The Cu-dependent phase transition in polycrystalline CuGaSe2 thin films has been studied by an electron probe micro-analyzer (EPMA) and the synchrotron x-ray diffraction method. A Cu-deficiency parameter, Z, defined as (1 - Cu/Ga) was used to study the phase transition. Upon increasing the Z-value, the composition of the films on the Cu2Se-Ga2Se3 pseudo binary tie line was found to shift from the stoichiometric CuGaSe2 (1:1:2) (Z = 0) to the Ga-rich composition through the formation of several ordered defect compounds.The structural modification in the Cu-poor CuGaSe2 film has been investigated by the synchrotron x-ray diffraction method. The existence of the Cu-poor surface phase over the near-stoichiometric bulk CuGaSe2 film was confirmed by the fitting of the accelerated voltage dependent EPMA data.

  1. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    PubMed Central

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-01-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV. PMID:27600023

  2. Role of surface-electrical properties on the cell-viability of carbon thin films grown in nanodomain morphology

    NASA Astrophysics Data System (ADS)

    Javid, Amjed; Kumar, Manish; Yoon, Seokyoung; Lee, Jung Heon; Tajima, Satomi; Hori, Masaru; Geon Han, Jeon

    2016-07-01

    Carbon thin films, having a combination of unique physical and chemical properties, exhibit an interesting biocompatibility and biological response to living entities. Here, the carbon films are developed in the morphology form of nano-domains with nanoscale inter-domain separations, tuned by plasma conditions in the facing target magnetron sputtering process. The wettability and surface energy are found to have a close relation to the inter-domain separations. The chemical structure of carbon films exhibited the relative enhancement of sp3 in comparison to sp2 with the increase of domain separations. The cell-viability of these films shows promising results for L929 mouse fibroblast and Saos-2 bone cells, when inter-domain separation is increased. Electrical conductivity and surface energy are identified to play the key role in different time-scales during the cell-proliferation process. The contribution from electrical conductivity is dominant in the beginning of the cultivation, whereas with the passage of time (~3-5 d) the surface energy takes control over conductivity to enhance the cell proliferation.

  3. Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

    NASA Astrophysics Data System (ADS)

    Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

    2016-09-01

    Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

  4. Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates

    NASA Astrophysics Data System (ADS)

    Laughlin, Ryan P.; Currie, Daniel A.; Contreras-Guererro, Rocio; Dedigama, Aruna; Priyantha, Weerasinghe; Droopad, Ravindranath; Theodoropoulou, Nikoleta; Gao, Peng; Pan, Xiaoqing

    2013-05-01

    The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10-8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

  5. UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

    2016-08-01

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent

  6. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M.; Das, Gangadhar

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  7. Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

    NASA Astrophysics Data System (ADS)

    Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

    2016-11-01

    Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

  8. Surface phonons of thin GaSe and InSe films epitaxially grown on the Si(111)(1×1)-H surface

    NASA Astrophysics Data System (ADS)

    Panella, V.; Glebov, A. L.; Toennies, J. P.; Sébenne, C.; Eckl, C.; Adler, C.; Pavone, P.; Schröder, U.

    1999-06-01

    Surface-phonon-dispersion curves of the (001) surfaces of the GaSe and InSe films epitaxially grown on the hydrogen-terminated Si(111)(1×1) surface have been investigated by high-resolution inelastic helium-atom scattering. The phonon-dispersion curves of the GaSe(001) thin epitaxial films are very similar to those of the single crystals investigated previously. For comparison with the experiments, density-functional theory based on the plane-wave pseudopotential method has been used to determine the phonon-dispersion curves of bulk GaSe and InSe in a consistent formalism. No difference is found between the surface and bulk phonons of these two layered compounds, as expected due to weak interlayer interaction forces. The high quality of the time-of-flight spectra presented here together with the ab initio calculations provide insight into the phonon dynamics of GaSe(001), and a characterization of the phonon modes of InSe(001).

  9. Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient

    NASA Astrophysics Data System (ADS)

    Kaya, Ahmet; Cansizoglu, Hilal; Mamtaz, Hasina H.; Mayet, Ahmed S.; Islam, M. Saif

    2016-09-01

    In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si) with (100) orientated surface by sol-gel method, and were characterized for comparing their electrical characteristics. The heterojunction parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics at room temperature. The ideality factor (n), saturation current (Io) and junction resistance of ZnO/p-Si heterojunction for both pure and doped (with Al or In) cases were determined by using different methods at room ambient. Other electrical parameters such as Fermi energy level (EF), barrier height (ΦB), acceptor concentration (Na), built-in potential (Φi) and voltage dependence of surface states (Nss) profile were obtained from the C-V measurements. The results reveal that doping ZnO with IIIA (Al or In) elements to fabricate n-ZnO/p-Si heterojunction can result in high performance diode characteristics.

  10. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tian, Li-Xin; Zhang, Feng; Shen, Zhan-Wei; Yan, Guo-Guo; Liu, Xing-Fang; Zhao, Wan-Shun; Wang, Lei; Sun, Guo-Sheng; Zeng, Yi-Ping

    2016-12-01

    Annealing effects on structural and compositional performances of Al2O3 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

  11. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  12. Pressure effect on the magnetization of Sr{sub 2}FeMoO{sub 6} thin films grown by pulsed laser deposition

    SciTech Connect

    Fix, T.; Versini, G.; Loison, J.L.; Colis, S.; Schmerber, G.; Pourroy, G.; Dinia, A.

    2005-01-15

    Thin films of Sr{sub 2}FeMoO{sub 6} (SFMO) are grown on SrTiO{sub 3} (001) substrates by pulsed laser deposition. The best films provide 3.2{mu}{sub B}/f.u. at 5 K, a Curie temperature above 400 K, low roughness, high crystallinity, and low splashing. Therefore, the use of such SFMO electrodes in magnetic tunnel junctions patterned with conventional lithography is promising. Pseudomorphic epitaxial growth is obtained for thicknesses under 50 nm. Above this thickness the films do not relax homogeneously. A coherent and systematic variation of the magnetization with the deposition conditions is obtained, which highlights a high reproducibility. Under a reasonable O{sub 2} partial pressure to avoid parasite phases, the limiting factor for high magnetization is the total pressure or the deposition rate. Therefore, the deposition rate is suspected to have a strong influence on the Fe/Mo ordering. Highly magnetic samples are obtained under a low gas flow of either a 20% O{sub 2}+N{sub 2} or a 0.3% O{sub 2}+Ar.

  13. Three-dimensional Monte Carlo simulation of nanorod self-organization in REBa2Cu3O y thin films grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Ichino, Yusuke; Yoshida, Yutaka; Miura, Shun

    2017-01-01

    Some metal-complex oxides (MCOs) self-organize within REBa2Cu3O y (REBCO: RE = rare earth) superconducting thin films grown by vapor phase epitaxy. To clarify the self-organization mechanism, we developed a three-dimensional Monte Carlo (3D-MC) simulation code using a simple model and simulated nanorod growth under various growth conditions. As a result, the self-organization of nanorods was reproduced by 3D-MC simulations and we clarified the nanorod growth mechanism as follows. The growth mode of MCO particles was 3D island growth due to the instability of the interface of the MCO and the substrate. On the other hand, that of REBCO particles was 2D island growth. There were diverse nanostructures, which were strongly affected by substrate temperature (T s) and deposition rate (v dep). We constructed a contour plot of the nanorod number density and a phase diagram of the nanostructures depending on T s and v dep.

  14. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

    PubMed Central

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V.

    2014-01-01

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics. PMID:25388355

  15. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    SciTech Connect

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David; Marcus, Matthew A.; Tarafder, Kartick

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  16. Atomic disorder of Li0.5Ni0.5O thin films caused by Li doping: estimation from X-ray Debye–Waller factors

    PubMed Central

    Yang, Anli; Sakata, Osami; Yamauchi, Ryosuke; Kumara, L. S. R.; Song, Chulho; Katsuya, Yoshio; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-01-01

    Cubic type room-temperature (RT) epitaxial Li0.5Ni0.5O and NiO thin films with [111] orientation grown on ultra-smooth sapphire (0001) substrates were examined using synchrotron-based thin-film X-ray diffraction. The 11 and 22 rocking curves including six respective equivalent reflections of the Li0.5Ni0.5O and NiO thin films were recorded. The RT B 1 factor, which appears in the Debye–Waller factor, of a cubic Li0.5Ni0.5O thin film was estimated to be 1.8 (4) Å2 from its 11 and 22 reflections, even though the Debye model was originally derived on the basis of one cubic element. The corresponding Debye temperature is 281 (39) K. Furthermore, the B 2 factor in the pseudo-Debye–Waller factor is proposed. This parameter, which is evaluated using one reflection, was also determined for the Li0.5Ni0.5O thin film by treating Li0.5Ni0.5O and NiO as ideal NaCl crystal structures. A structural parameter for the atomic disorder is introduced and evaluated. This parameter includes the combined effects of thermal vibration, interstitial atoms and defects caused by Li doping using the two Debye–Waller factors. PMID:26664345

  17. Temperature-induced changes in optical properties of thin film TiO2-Al2O3 bi-layer structures grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Rizwan; Saleem, Muhammad Rizwan; Honkanen, Seppo

    2016-02-01

    We investigate the optical properties and corresponding temperature-induced changes in highly uniform thin amorphous films and their bi-layer stacks grown by Atomic Layer Deposition (ALD). The environmentally driven conditions such as temperature, humidity and pressure have a significant influence on optical properties of homogeneous and heterogeneous bi-layer stacked structures of TiO2-Al2O3 and subsequently affect the specific sensitive nature of optical signals from nano-optical devices. Owing to the super hydrophilic behavior and inhibited surface defects in the form of hydrogenated species, the thermo-optic coefficient (TOC) of ~ 100 nm thick ALD-TiO2 films vary significantly with temperature, which can be used for sensing applications. On the other hand, the TOC of ~ 100 nm thick ALD-Al2O3 amorphous films show a differing behavior with temperature. In this work, we report on reduction of surface defects in ALD-TiO2 films by depositing a number of ultra-thin ALD-Al2O3 films to act as impermeable barrier layers. The designed and fabricated heterostructures of ALD-TiO2/Al2O3 films with varying ALD-Al2O3 thicknesses are exploited to stabilize the central resonance peak of Resonant Waveguide Gratings (RWGs) in thermal environments. The temperature-dependent optical constants of ALD-TiO2/Al2O3 bi-layer films are measured by a variable angle spectroscopic ellipsometer (VASE), covering a wide spectral range 380 <= λ <= 1800 nm at a temperature range from 25 to 105 °C. The Cauchy model is used to design and retrieve refractive indices at these temperatures, measured with three angles of incidence (59°, 67°, and 75°). The optical constants of 100 nm thick ALD-TiO2 and various combinational thicknesses of ALD-Al2O3 films are used to predict TOCs using a polynomial fitting algorithm.

  18. Angular properties of pure and Ca-substituted YBa2Cu3O7-δ superconducting thin films grown on SrTiO3 and CeO2 buffered Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Augieri, A.; Celentano, G.; Ciontea, L.; Galluzzi, V.; Gambardella, U.; Halbritter, J.; Petrisor, T.; Rufoloni, A.; Vannozzi, A.

    2007-09-01

    In this work transport properties of superconducting 10 at.% Ca-substituted YBCO thin films grown on (1 0 0)-SrTiO 3 single crystal substrate (STO) and superconducting pure and 10 at.% Ca-substituted YBCO thin films grown on CeO 2 buffered Al 2O 3 substrates (CAO) have been analyzed as a function of the temperature, applied magnetic field and angle between magnetic field direction and the direction normal to the film surfaces. Particularly, the angular analysis provides an easy way to discriminate between isotropic point defects and correlated pinning sites. Despite the intragrain pinning mechanisms remained unaffected by Ca substitution, a detrimental effect on grain boundary properties clearly emerged for 10 at.% Ca concentration. This effect is enhanced in sample grown on CeO 2 buffered sapphire where a more disturbed grain boundary is expected resulting in an enhancement of the correlated pinning, already observed in pure YBCO films grown on CAO, and in a reduction of the intrinsic pinning efficiency.

  19. Nanostructured light-absorbing crystalline CuIn(1-x)GaxSe2 thin films grown through high flux, low energy ion irradiation

    NASA Astrophysics Data System (ADS)

    Hall, Allen J.; Hebert, Damon; Shah, Amish B.; Bettge, Martin; Rockett, Angus A.

    2013-10-01

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn1-xGaxSe2 thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620-740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600-670 °C) and high rf power (80-400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by {112}T facets. At 80-400 W rf power and 640-740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong {112}T texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0-50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of {112}T planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  20. Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

    NASA Astrophysics Data System (ADS)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2015-09-01

    Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition at room temperature in oxygen ambient pressures of 75, 150 and 300 mTorr. The growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of as-grown films with thicknesses ˜65-420 nm were recorded for the three oxygen pressures. The growth rates were found to be highly linear both as a function of film thickness and oxygen pressure, indicating high reproducibility. All the films were optically smooth, hydrophobic and nanostructured with lateral grain shapes of ˜150 nm wide. This was found compatible with the deposition of condensed nanoclusters, formed in the ablation plume, on a cold and amorphous substrate. Films were nanocrystalline (wurtzite structure), c-axis oriented, with average crystallite size ˜22 nm for ZnO and ˜16 nm for AZO. In-plane compressive stress values of 2-3 GPa for ZnO films and 0.5 GPa for AZO films were found. Films also displayed high transmission greater than 95% in some cases, in the 400-800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to n-type conductive was observed for the films, with resistivity ˜103 Ω cm and Hall mobility in 4-14 cm2 V-1 s-1 range, showing marked dependences on film thickness and oxygen pressure. Applications in the fields of microfluidic devices and flexible electronics for these ZnO and AZO films are suggested.

  1. Highly textured Sr, Nb co-doped BiFeO{sub 3} thin films grown on SrRuO{sub 3}/Si substrates by rf- sputtering

    SciTech Connect

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-07-15

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO{sub 3} (BFO) thin films were successfully grown on SrRuO{sub 3}/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of {approx_equal}5.3 nm and average grain sizes of {approx_equal}65-70 nm for samples with different thicknesses. Remanent polarization values (2P{sub r}) of 54 {mu}C cm{sup -2} at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe{sup 3+}/Fe{sup 2+} trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO{sub 3}/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  2. Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE

    SciTech Connect

    Aabdin, Z.; Peranio, N.; Winkler, M.; Bessas, D.; König, J.; Hermann, R.P.; Böttner, H.; Eibl, O.

    2012-10-23

    Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.

  3. Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

    SciTech Connect

    Gálvez, S.; Rubio-Zuazo, J. Salas-Colera, E.; Muñoz-Noval, A.; Castro, G. R.

    2014-12-15

    Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

  4. Converse magnetoelectric coupling in NiFe/Pb(Mg1/3Nb2/3)O3-PbTiO3 nanocomposite thin films grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Feng, Ming; Hu, Jiamian; Wang, Jianjun; Li, Zheng; Shu, Li; Nan, C. W.

    2013-11-01

    Multiferroic NiFe (˜30 nm)/Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT, ˜220 nm) bilayered thin films were grown on common Pt/Ti/SiO2/Si substrates by a combination of off-axis magnetron sputtering and sol-gel spin-coating technique. By using AC-mode magneto-optical Kerr effect technique, the change in the Kerr signal (magnetization) of the NiFe upon applying a low-frequency AC voltage to the PMN-PT film was in situ acquired at zero magnetic field. The obtained Kerr signal versus voltage loop essentially tracks the electromechanical strain curve of the PMN-PT thin film, clearly demonstrating a strain-mediated converse magnetoelectric coupling, i.e., voltage-modulated magnetization, in the NiFe/PMN-PT nanocomposite thin films.

  5. Potentiometric Zinc Ion Sensor Based on Honeycomb-Like NiO Nanostructures

    PubMed Central

    Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Hussain, Mushtaque; Khan, Yaqoob; Khan, Azam; Nur, Omer; Willander, Magnus

    2012-01-01

    In this study honeycomb-like NiO nanostructures were grown on nickel foam by a simple hydrothermal growth method. The NiO nanostructures were characterized by field emission electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The characterized NiO nanostructures were uniform, dense and polycrystalline in the crystal phase. In addition to this, the NiO nanostructures were used in the development of a zinc ion sensor electrode by functionalization with the highly selective zinc ion ionophore 12-crown-4. The developed zinc ion sensor electrode has shown a good linear potentiometric response for a wide range of zinc ion concentrations, ranging from 0.001 mM to 100 mM, with sensitivity of 36 mV/decade. The detection limit of the present zinc ion sensor was found to be 0.0005 mM and it also displays a fast response time of less than 10 s. The proposed zinc ion sensor electrode has also shown good reproducibility, repeatability, storage stability and selectivity. The zinc ion sensor based on the functionalized NiO nanostructures was also used as indicator electrode in potentiometric titrations and it has demonstrated an acceptable stoichiometric relationship for the determination of zinc ion in unknown samples. The NiO nanostructures-based zinc ion sensor has potential for analysing zinc ion in various industrial, clinical and other real samples. PMID:23202217

  6. Measuring relative performance of an EDS detector using a NiO standard.

    SciTech Connect

    Sugar, Joshua Daniel; Kotula, Paul Gabriel

    2013-09-01

    A method for measuring the relative performance of energy dispersive spectrometers (EDS) on a TEM is discussed. A NiO thin-film standard fabricated at Sandia CA is used. A performance parameter,, is measured and compared to values on several TEM systems.

  7. Atomic layer deposition of NiO hole-transporting layers for polymer solar cells

    NASA Astrophysics Data System (ADS)

    Hsu, Che-Chen; Su, Heng-Wei; Hou, Cheng-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

    2015-09-01

    NiO is an attractive hole-transporting material for polymer solar cells (PSCs) owing to its excellent stability and electrical/optical properties. This study demonstrates, for the first time, fabrication of uniform, defect-free, and conformal NiO ultra-thin films for use as hole-transporting layers (HTLs) in PSCs by atomic layer deposition (ALD) through optimization of the ALD processing parameters. The morphological, optical, and electrical properties of ALD NiO films were determined to be favorable for their HTL application. As a result, PSCs containing an ALD NiO HTL with an optimized thickness of 4 nm achieved a power conversion efficiency (PCE) of 3.4%, which was comparable to that of a control device with a poly(3,4-ethylenedioxy-thiophene):poly(styrene-sulfonate) HTL. The high quality and manufacturing scalability of ALD NiO films demonstrated here will facilitate the adoption of NiO HTLs in PSCs.

  8. NiO nanoparticle-based urea biosensor.

    PubMed

    Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

    2013-03-15

    NiO nanoparticles (NiO-NPs) have been exploited successfully for the fabrication of a urea biosensor. A thin film of NiO nanoparticles deposited on an indium tin oxide (ITO) coated glass substrate serves as an efficient matrix for the immobilisation of urease (Ur), the specific enzyme for urea detection. The prepared bioelectrode (Ur/NiO-NP/ITO/glass) is utilised for urea sensing using cyclic voltammetry and UV-visible spectroscopy. NiO nanoparticles act as electro-catalytic species that are based on the shuttling of electrons between Ni(2+) and Ni(3+) in the octahedral site and result in an enhanced electrochemical current response. The prepared bioelectrode (Ur/NiO-NPs/ITO/glass) exhibits a high sensitivity of 21.3 μA/(mM (*) cm(2)) and a good linearity in a wide range (0.83-16.65 Mm) of urea concentrations with fast response time of 5s. The low value of the Michaelis-Menten constant (K(m)=0.34 mM) indicates the high affinity of Ur towards the analyte (urea). The high catalytic activity, along with the redox behaviour of NiO-NPs, makes it an efficient matrix for the realisation of a urea biosensor.

  9. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

    SciTech Connect

    Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.; Ghosh, Arindam; Birajadar, Ravikiran B.; Ghule, Anil V.; Sharma, Ramphal

    2012-11-15

    Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

  10. Preparation and characterization of Cu2ZnSnSe4 thin films grown from ZnSe and Cu2SnS3 precursors in a two stage process

    NASA Astrophysics Data System (ADS)

    Moreno, R.; Leguizamon, A.; Hurtado, M.; Guzmán, F.; Gordillo, G.

    2014-04-01

    Compound of the kesterite familie has been considered as an alternative absorber layer in the manufacture of thin film solar cells due to its earth abundant and environmental friendly constituents and high absorption coefficient. In this work we propose a new route to grow single phase Cu2ZnSnSe4 (CZTSe) thin films with tetragonal-kesterite type structure; this consist in sequential evaporation of thin films of CuSe, SnSe and ZnSe in a two stage process. Measurements of X-ray diffraction (XRD) revealed the formation of the Cu2ZnSnSe4 compound, grown with tetragonal Kësterite type structure. Optical characterization performed through spectral transmittance measurements established that this compound has high absorption (absorption coefficient > 104 cm-1) and a forbidden energy gap of 1.46 eV; these results indicate that the CZTSe thin films we have prepared has properties suitable for later use as absorber layer in solar cells. Results regarding electrical transport properties determined from temperature dependent conductivity measurements are also reported.

  11. Epitaxial Ba{sub 2}IrO{sub 4} thin-films grown on SrTiO{sub 3} substrates by pulsed laser deposition

    SciTech Connect

    Nichols, J. Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-03-24

    We have synthesized epitaxial Ba{sub 2}IrO{sub 4} (BIO) thin-films on SrTiO{sub 3} (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr{sub 2}IrO{sub 4}. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

  12. Room temperature tunable blue-green luminescence in nanocrystalline (Pb1-xSrx)TiO3 thin film grown on yttrium-doped zirconia substrate

    NASA Astrophysics Data System (ADS)

    Luo, L.; Ren, H. Z.; Tang, X. G.; Ding, C. R.; Wang, H. Z.; Chen, X. M.; Jia, J. K.; Hu, Z. F.

    2008-08-01

    Room temperature tunable blue-green photoluminescence was observed in nanocrystalline (Pb1-xSrx)TiO3 thin film under UV excitation. Its emission energy increases from 2.42 (at x =0.6) to 2.76 eV (at x =0.4), while the band gap decreases from 3.6 to 3.3 eV. Thin films of (Pb1-xSrx)TiO3 were prepared on yttrium-doped zirconia substrate by a simple sol-gel technique with spinning-coating process. Atom force microscope micrographs and crystallographic studies revealed the polycrystalline perovskite-type structure of the thin films. The observed optical properties are attributed to distorted octahedral due to different cation substitutions. The work shows that this kind of wide band gap and low cost nanocrystalline thin films is a very promising material for flat panel display applications and integrated light emission devices.

  13. Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

    SciTech Connect

    Danyluk, S.; Ostapenka, S.

    2008-11-01

    This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.

  14. Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition.

    PubMed

    Ahn, Jun-Ku; Park, Kyoung-Woo; Hur, Sung-Gi; Kim, Chung-Soo; Lee, Jeong-Yong; Yoon, Soon-Gil

    2011-01-01

    The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.

  15. Very High Surface Area Mesoporous Thin Films of SrTiO3 Grown by Pulsed Laser Deposition and Application to Efficient Photoelectrochemical Water Splitting.

    PubMed

    Sangle, Abhijeet L; Singh, Simrjit; Jian, Jie; Bajpe, Sneha R; Wang, Haiyan; Khare, Neeraj; MacManus-Driscoll, Judith L

    2016-12-14

    Very high surface area, self-assembled, highly crystalline mesoporous SrTiO3 (STO) thin films were developed for photoelectrochemical water splitting. Much improved performance of these mesoporous films compared to planar STO thin films and any other form of STO such as single crystal samples and nanostructures was demonstrated. The high performance resulted from very large surface area films and optimization of carrier concentration.

  16. Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition

    SciTech Connect

    Yang, Hyun Kyoung; Moon, Byung Kee; Choi, Byung Chun; Jeong, Jung Hyun; Kim, Kwang Ho

    2012-10-15

    Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films were deposited on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The films were grown at various oxygen pressures ranging from 100 to 400 mTorr. The crystallinity and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD and AFM respectively showed that the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films had a zircon structure and consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The radiation emitted was dominated by a red emission peak at 620 nm. The maximum PL intensity of the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 300 mTorr was increased by a factor of 1.3 compared to that of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 100 mTorr. The crystallinity, surface roughness and photoluminescence of the thin-film phosphors were strongly dependent on the deposition conditions, in particular, the oxygen partial pressure.

  17. Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films

    PubMed Central

    Choi, Won Jin; Jung, Jongjin; Lee, Sujin; Chung, Yoon Jang; Yang, Cheol-Soo; Lee, Young Kuk; Lee, You-Seop; Park, Joung Kyu; Ko, Hyuk Wan; Lee, Jeong-O

    2015-01-01

    We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity. PMID:25897486

  18. Structural optical and electronic properties of Fe and Ga doped ZnO thin films grown using pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Singh, Karmvir; Shukla, D. K.; Majid, S.; Dhar, R.; Choudhary, R. J.; Phase, D. M.

    2016-10-01

    Band gap engineering in ZnO thin films have been subject of intensive studies. The thin films of 2 wt % Fe and 2 wt % Ga doped ZnO and undoped ZnO were deposited on glass substrate by pulse laser deposition technique. Structural, optical and electronic structure properties of these thin films were investigated by X- Ray diffraction (XRD), UV-Vis spectroscopy and X-ray absorption spectroscopy (XAS), respectively. XRD studies show that all the thin films are highly oriented along the c-axis and maintain the wurtzite structure. Out of plane lattice parameter in Ga doped is smaller while in Fe doped is larger, compared to undoped ZnO. The band gaps of doped films have been found to increase due to doping of the Ga and Fe ions. XAS studies across O K edges of doped thin films show that the conduction band edge structure probed via oxygen 1s to 2p transitions have modified significantly in Ga doped sample.

  19. Effects of confinements on morphology of In{sub x}Ga{sub 1–x}As thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model

    SciTech Connect

    Arjmand, M.; Deng, J.; Swaminathan, N.; Morgan, D.; Szlufarska, I.

    2014-09-21

    An elastoplastic phase field model is developed to investigate the role of lateral confinement on morphology of thin films grown heteroepitaxially on patterned substrates. Parameters of the model are chosen to represent In{sub x}Ga{sub 1-x}As thin films growing on GaAs patterned with SiO₂. We determined the effect of misfit strain on morphology of thin films grown in 0.5 μm patterns with non-uniform deposition flux. Growth of islands inside patterns can be controlled by non-uniformity of deposition flux, misfit strain between film and the substrate, and also strain energy relaxation due to plastic deformation. Our results show that the evolution of island morphology depends non-monotonically on indium content and associated misfit strain due to coupling between the plastic relaxation and the confinements effects. Low indium concentration (0%–40%) causes formation of instabilities with relatively long wavelengths across the width of the pattern. Low surface diffusion (due to low indium concentration) and fewer islands across the pattern (due to small misfit strain) lead to formation and growth of islands near the walls driven by overflow flux. Further increase in indium concentration (40%–75%) increases the lattice mismatch and surface diffusivity of the film, and also activates plastic deformation mechanism, which leads to coalescence of islands usually away from the edges. By further increasing the indium concentration (up to 100%), plastic deformation relaxes most of the strain energy density of the film, which prevents formation of instabilities in the film. Hence, in this case, islands are only formed near the walls.

  20. Design of a compact waveguide optical isolator based on multimode interferometers using magneto-optical oxide thin films grown on silicon-on-insulator substrates.

    PubMed

    Shui, Keyi; Nie, Lixia; Zhang, Yan; Peng, Bo; Xie, Jianliang; Deng, Longjiang; Bi, Lei

    2016-06-13

    We report the design of a waveguide optical isolator based on multimode interferometer (MMI) structure using silicon on insulator (SOI) and deposited magneto-optical (MO) thin films. The optical isolator is based on a vertical 1 × 2 SOI MMI utilizing the nonreciprocal phase shift (NRPS) difference of different TM modes of the MO garnet thin film/SOI waveguide. By constructing a silicon/MO thin film/silicon structure, we demonstrate that the NRPS of the fundamental and first order TM modes can show opposite signs for certain device dimensions, therefore significantly reduce the device length. For a 310.42 μm long device, 20 dB isolation bandwidth larger than 1.6 nm with total insertion loss of 0.817 dB is achieved at 1550 nm wavelength. The fabrication tolerances and materials losses are also discussed to satisfy the state-of-the-art fabrication technology and material properties.

  1. Electrical Characterization of Zn and ZnO Nanowires Grown on PEDOT:PSS Conductive Polymer Thin Films by Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Chamberlin, Matthew; Constantin, Costel

    2011-10-01

    Physical vapor deposition (PVD) techniques offer tremendous possibilities for easy fabrication of nanostructure arrays for use in thin film electronics. In this study we examine inorganic/organic heterojunctions produced by growing conductive Zn and semiconductive ZnO nanowire arrays on organic conductive PEDOT:PSS polymer thin films using simple and cost-effective PVD methods. Understanding the electrical properties of these hybrid films are of particular interest for applications in organic electronics. However, traditional systems for measuring conductivity and resistivity of thin films by the Van Der Pauw method prove problematic when dealing with soft polymeric surfaces. We present here electrical studies of ZnO- and Zn-nanowire/PEDOT:PSS heterojunctions using a modified 2-point probe method constructed from inexpensive and easily available materials.

  2. Structural, magnetic and magnetodielectric properties of the Mn3O4 thin films epitaxially grown on SrTiO3 (001) substrates

    NASA Astrophysics Data System (ADS)

    Huang, Siyu; Wang, Yuhang; Wang, Zongchi; Zhao, Kehan; Shi, Xiaolan; Lai, Xubo; Zhang, Liuwan

    2015-06-01

    The (001)-orientated Mn3O4 thin films were fabricated on Nb-doped SrTiO3 (001) substrates by a pulsed laser deposition method, and the structural, magnetic, and magnetodielectric properties were investigated. We found that the as-prepared thin film is tetragonal with biaxial compressive strain in the film plane. The orientation relationship in the film plane is Mn3O4 [100] || SrTiO3 [110]. Compared with the single crystals, the paramagnetic-ferrimagnetic transition temperature TN is greatly increased due to the in-plane compressive strain. At TN, a sharp drop in the dielectric constant was observed. Under a magnetic field, the dielectric constant shows a negative field-direction dependent response around TN. Our experiments indicated the strong coupling between the strain, lattice, spin, and orbital degrees of freedom in the epitaxial Mn3O4 thin films.

  3. Lattice spacings and domain sizes of room-temperature epitaxial LixNi1-xO (0 ≤ x ≤ 0.48) thin films grown on ultra-smooth sapphire substrates

    NASA Astrophysics Data System (ADS)

    Yang, Anli; Sakata, Osami; Yamauchi, Ryosuke; Katsuya, Yoshio; Kumara, L. S. R.; Shimada, Yoshitomo; Matsuda, Akifumi; Yoshimoto, Mamoru

    2014-11-01

    The effects of heavy Li doping on lattice spacings, out-of-plane, and in-plane domain sizes of room-temperature epitaxial LixNi1-xO (0 ≤ x ≤ 0.48) thin films on ultra-smooth sapphire (0 0 0 1) substrates were investigated. The pseudocubic-on-hexagonal epitaxial relationship between the LixNi1-xO epitaxial thin films and the sapphire substrates was verified. The (1 1 1) lattice spacing of the film was larger than the (1 1 bar 1) lattice spacing of the film regardless of the Li content. It indicated that all the crystal structures deviated from the ideal cubic structure and elongated along the [1 1 1] out-of-plane growth direction. The crystal domain sizes of LixNi1-xO thin films in the in-plane direction were found to be very similar, while the out-of-plane domain size increased with a Li content up to 48 mol%. It suggested that the out-of-plane growth can be improved by heavy Li doping. Moreover, the crystal quality of the films was compared with that grown by high temperature pulse laser deposition in view of the domain size information.

  4. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method

    NASA Astrophysics Data System (ADS)

    Thi Kieu Lien, Mai; Horita, Susumu

    2016-03-01

    Amorphous Si thin films on yttria-stabilized zirconia (YSZ) layers were crystallized widely in solid phase by the two-step method with a pulsed laser, moving the sample stage. The crystalline quality, impurity diffusion, and electrical properties of the crystallized Si films were investigated. It was found that the crystallinity of the Si thin films was improved and their surface was smooth without an incubation layer at the interface, indicating the uniform crystallinity of Si on YSZ. The diffusion of Zr and Y into the Si thin films was as small as or smaller than the order of 1017 atoms/cm3. We evaluated the electrical properties of carrier concentration and Hall mobility of the Si thin films with/without YSZ layers by using the resistivity and AC Hall effect measurements. The temperature and doping concentration dependences were measured for both undoped and P-doped films. It was found that both the undoped and P-doped Si/YSZ/glass films showed higher mobilities and carrier concentrations (and therefore higher conductivities), which indicate a smaller number of defects, than the Si/glass films. This suggested that the Si film crystallized on the YSZ layer is more suitable for application to electronic devices than the Si film on glass.

  5. Highly transparent and lower resistivity of yttrium doped ZnO thin films grown on quartz glass by sol-gel method

    NASA Astrophysics Data System (ADS)

    Kaur, Narinder; Sharma, Sanjeev K.; Kim, Deuk Young; Singh, Narinder

    2016-11-01

    We prepared highly transparent yttrium-doped ZnO (YZO) thin films on quartz glass by a sol-gel method, and then annealed them at 600 °C in vacuum. All samples showed hexagonal wurtzite structure with a preferential orientation along the (002) direction. We observed the average grain size of Y: 2 at% thin film to be in the range of 15-20 nm. We observed blue shift in the optical bandgap (3.29 eV→3.32 eV) by increasing the Y concentration (0-2 at%), due to increasing the number of electrons, and replacing the di-valent (Zn2+) with tri-valent (Y3+) dopants. Replacing the higher ionic radii (Y3+) with smaller ionic radii (Zn2+) expanded the local volume of the lattice, which reduced the lattice defects, and increased the intensity ratio of NBE/DLE emission (INBE/IDLE). We also observed the lowest (172 meV) Urbach energy of Y: 2 at% thin film, and confirmed the high structural quality. Incorporation of the appropriate Y concentration (2 at%) improved the crystallinity of YZO thin films, which led to less carrier scattering and lower resistivity.

  6. Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

    SciTech Connect

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-08-20

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  7. Physical properties of MgSe thin films grown by chemical bath deposition method: effect of molar concentration of MgCl2

    NASA Astrophysics Data System (ADS)

    Ubale, A. U.; Sakhare, Y. S.

    2013-12-01

    In the present paper, we have reported the effect of molar concentration of Mg salt on physical properties of MgSe thin films deposited by chemical bath deposition process. The MgSe thin films have been characterized for their structural, morphological and optical studies. We have observed that the films are nanocrystalline in nature with cubic lattice. The optical band gap energy of MgSe is changed from 2.82 to 2.65 eV depending on Mg ion concentration in deposition bath. The electrical resistivity of MgSe film varies from 56 × 102 to 41 × 102 Ω cm depending on Mg ion concentration in reaction bath. The thermo-emf measurement has confirmed p-type conductivity of MgSe.

  8. Piezoelectric force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction.

    SciTech Connect

    Park, M.; Hong, S.; Kim, J.; Kim, Y.; Buehlmann, S.; Kim, Y. K.; No, K.; Materials Science Division; Korea Advanced Inst. of Science and Technology; Imperial Col.; Samsung Electronics

    2009-01-01

    We fabricated 20 nm thick PbTiO{sub 3} films via reactive magnetron sputtering and studied the domain switching phenomena and retention properties using piezoresponse force microscopy. We found that multistep deposited PbTiO{sub 3} thin films showed 29% smaller rms roughness (2.5 versus 3.5 nm), 28% smaller coercive voltage (1.68 versus 2.32 V), 100% higher d{sub 33} value, and improved retention characteristic (89% versus 52% of remained poled domain area in 1280 min after poling) than single-step deposited PbTiO{sub 3} thin films. We attribute the improvement to the more complete chemical reaction between PbO and TiO{sub 2} during the film growth.

  9. Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

    SciTech Connect

    Muret, Pierre; Tainoff, Dimitri; Morhain, Christian; Chauveau, Jean-Michel

    2012-09-17

    Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole traps with largest capture cross sections are likely acceptors, 0.19 and 0.48 eV from the valence band edge, able to be ionized below room temperature. These results are compared with theoretical predictions and other experimental data.

  10. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    NASA Astrophysics Data System (ADS)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  11. pH dependent studies of chemical bath deposition grown ZnO-SiO2 core-shell thin films

    NASA Astrophysics Data System (ADS)

    Seth, Rajni; Panwar, Sanjay; Kumar, Sunil; Kang, T. W.; Jeon, H. C.

    2017-01-01

    ZnO-SiO2 core-shell thin films were synthesized using chemical-bath deposition at different pH. Optical studies were done to optimize the thin films to find suitable parameters for solar cell buffer layers. These studies were done by measuring the transmission at 500 nm, which is the peak of the solar spectrum. All the parameters were seen to be highly pH dependent. The transmittance for a sample synthesized with a pH of 10.8 reached 85%. The transmittance was found not to depend on the bandgap values, but it was found possibly to depend on the fewer defect states created at a particular pH, as shown by Urbach energy and scanning electron microscopy (SEM) surface structure. An appreciable transmittance was observed in the blue region of the spectrum which had been missing until now in commercial CdS-based buffer layers. The Fourier-transform infrared and the energy dispersive X-ray spectra confirmed that the films were composed of only ZnO and silica only: no impurities were found. The urbach energy values and the SEM image of sample S3 clearly indicate the creation of fewer of defects, leading to higher crystallintiy and higher transmittance. Therefore, this shortcoming can be resolved by the substituted buffer layer of ZnO:SiO2 nano-composite thin film, which can enhance the blue response of the photovoltaic cells.

  12. In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

    SciTech Connect

    Yang Zhibin; Hao Jianhua

    2012-09-01

    We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.

  13. Photo-induced valence change of the sulfur atom in an L-cysteine thin film grown on a silver metal substrate in a saliva-emulated aqueous solution

    NASA Astrophysics Data System (ADS)

    Tsujibayashi, Toru; Azuma, Junpei; Yamamoto, Isamu; Takahashi, Kazutoshi; Kamada, Masao

    2015-04-01

    A thin film of L-cysteine (HSCH2CH(NH2)COOH) is grown on a silver substrate in saliva-emulated aqueous solution. X-ray photoemission spectroscopic measurements have revealed that the sulfur atom shows valence change under IR laser irradiation at 825 nm. The valence change maintains for about a minute at room temperature and more than an hour between 110 and 250 K after stopping the laser irradiation. It is not observed at all at temperatures lower than 110 K. This temperature-dependent behavior indicates that the photo-excited electronic change should be accompanied by a conformational change in the L-cysteine molecule. It is strongly suggested that the reversible valence change of the sulfur atom is applicable to a memory used around room temperature.

  14. Angular-dependent vortex pinning mechanism and magneto-optical characterizations of FeSe0.5Te0.5 thin films grown on CaF2 substrates

    NASA Astrophysics Data System (ADS)

    Yuan, Pusheng; Xu, Zhongtang; Ma, Yanwei; Sun, Yue; Tamegai, Tsuyoshi

    2016-03-01

    Magneto-optical (MO) characterizations and the angular-dependent critical current density (J c(Θ)) of epitaxial FeSe0.5Te0.5 (FST) thin films grown on CaF2 single-crystalline substrates were performed. The MO images show typical rooftop patterns in the remanent state from which a large, homogeneous, and almost isotropic self-field J c over 2 × 106 A cm-2 at 8 K was obtained. The vortex pinning mechanism is investigated measuring the magnetic field and angular-dependent critical current density J c. The FST films exhibit small anisotropy of J c in the whole applied magnetic field range below 15 K. The Dew-Hughes model and angular scaling analyses prove that pointlike normal cores, which are distributed randomly in the FST film, dominate the pinning in the FST films on CaF2 substrates.

  15. Photo-induced valence change of the sulfur atom in an L-cysteine thin film grown on a silver metal substrate in a saliva-emulated aqueous solution

    SciTech Connect

    Tsujibayashi, Toru; Azuma, Junpei; Yamamoto, Isamu; Takahashi, Kazutoshi; Kamada, Masao

    2015-04-27

    A thin film of L-cysteine (HSCH{sub 2}CH(NH{sub 2})COOH) is grown on a silver substrate in saliva-emulated aqueous solution. X-ray photoemission spectroscopic measurements have revealed that the sulfur atom shows valence change under IR laser irradiation at 825 nm. The valence change maintains for about a minute at room temperature and more than an hour between 110 and 250 K after stopping the laser irradiation. It is not observed at all at temperatures lower than 110 K. This temperature-dependent behavior indicates that the photo-excited electronic change should be accompanied by a conformational change in the L-cysteine molecule. It is strongly suggested that the reversible valence change of the sulfur atom is applicable to a memory used around room temperature.

  16. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ficek, Mateusz; Sankaran, Kamatchi J.; Ryl, Jacek; Bogdanowicz, Robert; Lin, I.-Nan; Haenen, Ken; Darowicki, Kazimierz

    2016-06-01

    The influence of N2 concentration (1%-8%) in CH4/H2/N2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS-NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH4/H2 plasma contained micron-sized diamond grains, the films grown using CH4/H2/(4%)N2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

  17. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    SciTech Connect

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G.; Pizzoferrato, R.; Orsini, A.; Falconi, C.

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  18. Epitaxial single-crystal thin films of MnxTi1 - xO2 - δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1 - xO2 - δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400 °C and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways for surface oxide formation.

  19. Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    SciTech Connect

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  20. Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

    SciTech Connect

    Shen, X. Q. Takahashi, T.; Ide, T.; Shimizu, M.

    2015-09-28

    We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the different growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.

  1. Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films

    NASA Astrophysics Data System (ADS)

    Wang, Le; Chang, Lei; Yin, Xinmao; Rusydi, Andrivo; You, Lu; Zhou, Yang; Fang, Liang; Wang, Junling

    2017-01-01

    Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristics of high-quality ultrathin Nd0.9Sr0.1NiO3 (Sr-NNO) films, which were grown on LaAlO3 (0 0 1) single-crystal substrates by using pulsed laser deposition method. Thick Sr-NNO films (25 unit cells) exhibit metallic behavior with the electrical resistivity following the T  n (n  <  2) law corresponding to a non-Fermi liquid system, while a temperature driven metal-insulator transition (MIT) is observed with films of less than 15 unit cells. The transition temperature increases with reducing film thickness, until the insulating characteristic is observed even at room temperature. The emergence of the insulator ground state can be attributed to weak localization driven MIT expected by considering Mott-Ioffe-Regel limit. Furthermore, the magneto-transport study of Sr-NNO ultrathin films also confirms that the observed MIT is due to the disorder-induced localization rather than the electron-electron interactions.

  2. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    PubMed

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  3. IR and electrochemical synthesis and characterization of thin films of PEDOT grown on platinum single crystal electrodes in [EMMIM]Tf2N ionic liquid.

    PubMed

    Sandoval, Andrea P; Suárez-Herrera, Marco F; Feliu, Juan M

    2015-01-01

    Thin films of PEDOT synthesized on platinum single electrodes in contact with the ionic liquid 1-ethyl-2,3-dimethylimidazolium triflimide ([EMMIM]Tf2N) were studied by cyclic voltammetry, chronoamperometry, infrared spectroscopy and atomic force microscopy. It was found that the polymer grows faster on Pt(111) than on Pt(110) or Pt(100) and that the redox reactions associated with the PEDOT p-doping process are much more reversible in [EMMIM]Tf2N than in acetonitrile. Finally, the ion exchange and charge carriers' formation during the p-doping reaction of PEDOT were studied using in situ FTIR spectroscopy.

  4. IR and electrochemical synthesis and characterization of thin films of PEDOT grown on platinum single crystal electrodes in [EMMIM]Tf2N ionic liquid

    PubMed Central

    Sandoval, Andrea P; Suárez-Herrera, Marco F

    2015-01-01

    Summary Thin films of PEDOT synthesized on platinum single electrodes in contact with the ionic liquid 1-ethyl-2,3-dimethylimidazolium triflimide ([EMMIM]Tf2N) were studied by cyclic voltammetry, chronoamperometry, infrared spectroscopy and atomic force microscopy. It was found that the polymer grows faster on Pt(111) than on Pt(110) or Pt(100) and that the redox reactions associated with the PEDOT p-doping process are much more reversible in [EMMIM]Tf2N than in acetonitrile. Finally, the ion exchange and charge carriers’ formation during the p-doping reaction of PEDOT were studied using in situ FTIR spectroscopy. PMID:25815089

  5. Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy.

    PubMed

    Vasconcelos, Hugo Menezes do Nascimento; Eddrief, Mahmoud; Zheng, Yunlin; Demaille, Dominique; Hidki, Sarah; Fonda, Emiliano; Novikova, Anastasiia; Fujii, Jun; Torelli, Piero; Salles, Benjamin Rache; Vobornik, Ivana; Panaccione, Giancarlo; de Oliveira, Adilson Jesus Aparecido; Marangolo, Massimiliano; Vidal, Franck

    2016-01-26

    We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3. Monoclinic Fe3Se4 is identified as the main secondary phase through detailed structural measurements. Due to the presence of the hard ferrimagnetic Fe3Se4 inclusions, the system exhibits a very large coercive field at low temperature and room temperature magnetic ordering. Despite this composite structure and the proximity of a magnetic phase, the surface electronic structure of Bi2Se3 is preserved, as shown by the persistence of a gapless Dirac cone at Γ.

  6. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Martínez-Tomás, M. C.; Zúñiga-Pérez, J.; Vennéguès, P.; Tottereau, O.; Muñoz-Sanjosé, V.

    2007-07-01

    In the frame of studying II VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature.

  7. Thin Film Ba(x)Sr(1-x)TiO3 Ku- and K-Band Phase Shifters Grown on MgO Substrates

    NASA Technical Reports Server (NTRS)

    VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Horwitz, J. S.; Chang, W.; Kim, W. J.

    1999-01-01

    We report measurements of gold circuits fabricated on four Ba(x)Sr(1-x)TiO3 films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency measurements of epsilon(sub r) and tan(delta) on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters done on the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4 C/dB at 18 GHz and 400 V dc bias were measured.

  8. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    SciTech Connect

    Alevli, Mustafa Gungor, Neşe; Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi

    2016-01-15

    Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.

  9. Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In ,Ga)Se2 thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Lei, C. H.; Rockett, A. A.; Robertson, I. M.; Papathanasiou, N.; Siebentritt, S.

    2006-12-01

    Cu(In1-xGax)Se2 (CIGS) films were grown on (001) GaAs at 570 or 500°C by means of metal organic vapor-phase epitaxy. All films were Cu-rich [Cu /(In+Ga)>1] with pseudomorphic Cu2Se second phase particles found only on the growth surface. During growth, diffusion of Ga from the substrate and vacancies generated by the formation of CIGS from Cu2Se at the surface occurred. The diffusion processes lead to the formation of Kirkendall voids at the GaAs/CIGS interface. Transmission electron microscopy and nanoprobe energy dispersive spectroscopy were used to analyze the diffusion and void formation processes. The diffusivity of Ga in CIGS was found to be relatively low. This is postulated to be due to a comparatively low concentration of point defects in the epitaxial films. A reaction model explaining the observed profiles and voids is proposed.

  10. High oxidation state at the epitaxial interface of {gamma}-Al{sub 2}O{sub 3} thin films grown on Si(111) and Si(001)

    SciTech Connect

    El Kazzi, M.; Silly, M.; Sirotti, F.; Merckling, C.; Saint-Girons, G.; Grenet, G.; Hollinger, G.

    2010-10-11

    High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial {gamma}-Al{sub 2}O{sub 3} and Si substrate. The experiments were performed on 1 nm thick epitaxial {gamma}-Al{sub 2}O{sub 3} layers grown on both Si(111) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si{sup 2+} and Si{sup 3+} species and the presence of two different Si{sup 4+} species. A microscopic model is proposed for the interface obtained with two incomplete SiO{sub 2} planes based on the Si 2p{sub 3/2} line shape.

  11. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zandian, Majid

    Doped layer semiconductor structures provide possibilities for novel electronic devices. Growth of Hg1-xCdxTe by molecular beam epitaxy (MBE) allows precise control over the doping profile and position of heterojunctions as well as structural properties of this ternary alloy. Even though n-type doping using indium is well established, little is known about p-type doping in this material system by MBE. Several elements such as Ag, Au, Sb, Bi and P have been previously used, however high diffusion coefficient and amphoteric behavior of these atoms in HgCdTe has restricted their use in heterojunction devices where control over doping profiles and concentrations is needed. We investigated arsenic incorporation efficiency as a function of As 4 flux and growth temperature. The sticking coefficient of As is substantially higher at lower growth temperature compared to growth at 190°C. For samples grown at 170°C, the etch pit density (EPD) is higher compared to p-type As doped samples grown at 190°C. Higher EPD is associated with columnar twin defects observed in transmission electron microscopy (TEM) studies of low growth temperature samples. Growth at low temperature of 170°C causes Hg rich condition promoting twin formation. Therefore, growth of p-type layers doped with As at low temperatures require optimization of II/VI flux ratio to eliminate columnar twin defects. It is possible to incorporate As at normal MBE growth temperature of 190°C but very high flux of As has to used to overcome low sticking coefficient of As at these temperatures. We proposed a mechanism for the activation of As involving Hg vacancies (VHg··) where Te is moved to a Hg vacancy, leaving behind a Te vacancy, which is then filled by an As atom. The Te that is now on a Hg site (i.e., Te antisite) migrates to the surface and leaves the crystal.

  12. Bandgap tuning and spectroscopy analysis of In x Ga (1‑x) N thin films grown by RF sputtering method

    NASA Astrophysics Data System (ADS)

    Jakkala, Pratheesh; Kordesch, Martin E.

    2017-01-01

    In this study, we present a simple and novel method for optical bandgap tuning of indium gallium nitride (InGaN) thin films by controlling the growth conditions in magnetron RF sputtering. Thin films with different indium (In) atomic compositions, x = 0.02 to 0.57 are deposited on high temperature aluminosilicate glass and silicon (111) substrates. Substrate temperature is varied from 35 °C to 450 °C. The gas mixture for sputtering is inert argon (Ar) and reactive nitrogen (N2). Total pressure of sputtering gas mixture is kept constant at 12 mTorr but partial pressures of Ar and N2 are varied. Ar partial pressure to total pressure ratio is varied from 0 to 0.75. Optical bandgap values from 1.4 eV to 3.15 eV, absorption coefficient values of ∼104 cm‑1 to ∼7 × 105 cm‑1 and critical film thickness values of 0.04 μm to 4 μm are measured. UV–visible spectroscopy method and Tauc plots are used. Bandgap tuning with Ar partial pressure ratio and substrate temperature is presented.

  13. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

    PubMed Central

    Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

    2012-01-01

    The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations. PMID:23230505

  14. Electrical properties of InGaN thin films grown by RF sputtering at different temperatures, varying nitrogen and argon partial pressure ratios

    NASA Astrophysics Data System (ADS)

    Jakkala, Pratheesh; Kordesch, Martin E.

    2016-10-01

    Indium gallium nitride (InGaN) thin films of varying indium (In) and gallium (Ga) compositions have been fabricated on aluminosilicate glass and silicon (111) substrates using RF magnetron sputtering method at different growth temperatures, varied from 35 °C to 450 °C. Argon (Ar) and nitrogen (N2) are used as Inert and reactive gases respectively. Keeping the total pressure of gas mixture constant, partial pressures of N2 and Ar gases are varied. Ratio of Ar partial pressure to total pressure in the gas mixture is varied from 0 to 0.75. In this study, we present electrical properties of these InGaN thin films. Resistivity values of 2.6 × 10-5 to 1.68 × 10-2 Ω.cm, mobility values of 0.119 to 45.2 cm2/V.s, conductivity values of 0.595 × 103 to 37.3 × 103 mho/cm and bulk carrier concentration values -1020 to -1022/m3 are recorded that are measured through Hall-effect measurement technique.

  15. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 < y < 0.3) interlayers on Si(111) substrates. It was found by high-resolution transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  16. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    SciTech Connect

    James, K. K.; Satish, B.; Jayaraj, M. K.

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

  17. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

    SciTech Connect

    Skuza, J. R. E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K. E-mail: apradhan@nsu.edu

    2015-11-21

    We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

  18. Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

    SciTech Connect

    Shan, Rong; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia; Gao, Li; Kellock, Andrew; Roche, Kevin P.; Samant, Mahesh G.; Parkin, Stuart S. P.; Ikenaga, Eiji

    2013-04-29

    Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

  19. Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Razeghi, M.

    2010-03-01

    Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

  20. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  1. ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

    NASA Astrophysics Data System (ADS)

    Zhao, Wang; Dong, Xin; Zhao, Long; Shi, Zhi-Feng; Wang, Jin; Wang, Hui; Xia, Xiao-Chuan; Chang, Yu-Chun; Zhang, Bao-Lin; Du, Guo-Tong

    2010-12-01

    ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7.7eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69 cm2 V-1s-1 and ~ 1 × 104, respectively.

  2. Electronic excitations and structure of Li{sub 2}IrO{sub 3} thin films grown on ZrO{sub 2}:Y (001) substrates

    SciTech Connect

    Jenderka, Marcus Schmidt-Grund, Rüdiger; Grundmann, Marius; Lorenz, Michael

    2015-01-14

    Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of Li{sub 2}IrO{sub 3} films on ZrO{sub 2}:Y (001) single crystalline substrates. X-ray diffraction confirms preferential (001) and (10-1) out-of-plane crystalline orientations with well defined in-plane orientation. Resistivity between 35 and 300 K is dominated by a three-dimensional variable range hopping mechanism. The dielectric function is determined by means of spectroscopic ellipsometry and, complemented by Fourier transform infrared transmission spectroscopy, reveals a small optical gap of ≈300 meV, a splitting of the 5d-t{sub 2g} manifold, and several in-gap excitations attributed to phonons and possibly magnons.

  3. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M.; Zhao, H. J.; Chen, X. M.; Bellaiche, L.

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C} = 31.8 K with a saturation magnetization of 4.2 μ{sub B} per formula unit at 10 K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ∼0.7 eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  4. Microstructure study of pinning sites of highly (0001) textured Sm(Co,Cu){sub 5} thin films grown on Ru underlayer

    SciTech Connect

    Zhao Haibao; Wang Hao; Liu Xiaoqi; Wang Jianping

    2012-04-01

    In this paper, microstructure study of pinning sites of highly (0001) textured Sm(Co,Cu){sub 5} thin films was presented. Various types of pinning sites were identified, such as voids, grain/matrix boundaries (or crystalline/amorphous boundaries), grain boundaries between crystalline grains, and composition inhomogeneity in grains. One key finding of TEM elemental mapping was that Cu atoms were rich in the inner part of Sm(Co,Cu){sub 5} grains (defined by Sm and Co concentrations), instead of the outer part of grains, such as grain boundaries. Cu served as an alloying element in Sm(Co,Cu){sub 5} grains, not as a doping element to form Cu-rich grain boundaries. A model of Sm(Co,Cu){sub 5} films with lateral graded anisotropy due to composition/crystallization variation can explain the huge difference between the H{sub C} and H{sub K}.

  5. Superior dielectric properties for template assisted grown (100) oriented Gd{sub 2}O{sub 3} thin films on Si(100)

    SciTech Connect

    Roy Chaudhuri, Ayan Osten, H. J.; Fissel, A.

    2014-01-06

    We report about the single crystalline growth and dielectric properties of Gd{sub 2}O{sub 3}(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd{sub 2}O{sub 3}. Unusually, high dielectric constant values (∼23–27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd{sub 2}O{sub 3}/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance.

  6. Transport properties of ultra-thin VO{sub 2} films on (001) TiO{sub 2} grown by reactive molecular-beam epitaxy

    SciTech Connect

    Paik, Hanjong; Tashman, Joshua W.; Moyer, Jarrett A.; Schiffer, Peter; Spila, Timothy; Mundy, Julia A.; Freeman, Eugene; Shukla, Nikhil; Datta, Suman; Lapano, Jason M.; Engel-Herbert, Roman; Zander, Willi; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.

    2015-10-19

    We report the growth of (001)-oriented VO{sub 2} films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO{sub 2} surface. Another key limitation is interdiffusion with the (001) TiO{sub 2} substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO{sub 2} films with abrupt MIT behavior.

  7. Improved electrical, optical, and structural properties of undoped ZnO thin films grown by water-mist-assisted spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Martínez Pérez, L.; Aguilar-Frutis, M.; Zelaya-Angel, O.; Muñoz Aguirre, N.

    2006-08-01

    Undoped ZnO thin films were prepared using the ultrasonic spray pyrolysis deposition technique with zinc acetylacetonate dissolved in N,N-dimethylformamide as the source materials solution. The addition of water mist in a parallel flux to the spray solution stream was also used during deposition of the films. The addition of water mist improved the electrical characteristics of the ZnO films. Fresh ZnO samples were then thermally annealed in a H2 reducing atmosphere. X-ray diffraction patterns show mainly the wurzite crystalline ZnO phase in the films. An electrical resistivity ( ) of around 2.7 × 10-2 cm was measured at room temperature for the best undoped ZnO film. is approximately one order of magnitude lower than the resistivities found in undoped ZnO films obtained by means of similar non-vacuum deposition techniques.

  8. Densitometric validation and analysis of biomarker β-amyrin in different Acacia species (leaves) grown in Kingdom of Saudi Arabia by high performance thin-layer chromatography.

    PubMed

    Alam, Perwez; Alajmi, Mohamed Fahad; Siddiqui, Nasir Ali; Al-Rehaily, Adnan Jathlan; Alharbi, Hattan; Basudan, Omer Ahmed; Hussain, Afzal

    2015-07-01

    Biomarker β-amyrin was analyzed in the leaves of four different Acacia species (A. salicina, A. loreta, A. hamulosa and A. tortilis) grown in Kingdom of Saudi Arabia by a validated HPTLC method. The chromatography was performed on glass-backed silica gel 60 F254 HPTLC plates using solvents toluene: methanol (9:1, v/v) as mobile phase. The developed TLC plate was derivatized with anisaldehyde and scanned at 520 nm. A sharp peak of β-amyrin was found at Rf=0.58±0.01. The r2 and the linear regression equation for β-amyrin was found to be 0.991 and 19.913X+107.803, respectively in the concentration range of 100-800 ng. The percentage of β-amyrin was found to be maximum 2.70% w/w in A. tortilis, 1.85% w/w in A. loreta and 1.80% w/w in A. hamulosa while it was totally absent in A. salicina. This study conceives maiden reporting of quantification of β-amyrin in four different species of Acacia by validated HPTLC method. The developed method for the analysis of β-amyrin was proved to be reproducible by statistical analysis hence it can be employed for further analysis of β-amyrin in plasma, other biological fluids and in finished products available in the market.

  9. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    SciTech Connect

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes; Mukhopadhyay, Partha

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  10. Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

    SciTech Connect

    Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D.

    1996-05-01

    The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

  11. Transport properties of SrTiO3-δ thin films grown by Molecular Beam Epitaxy on p-Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Theodoropoulou, Nikoleta; Currie, Daniel; Cottier, Ryan; Ponce-Pedraza, Arturo; Cantu, Jesus; Villarreal, Oscar

    2015-03-01

    SrTiO3 (STO) films were grown on p-Si(001) and STO(001) bulk substrates using molecular beam epitaxy (MBE). Oxygen vacancies were introduced by controlling the Oxygen pressure during growth (P(O2) : 4 × 10-8 - 8 × 10-7) resulting in SrTiO3-δ with δ ~ 0.02% for the lowest P(O2) . The single-phase STO/Si films were of high crystalline quality as verified by x-ray diffraction, transmission electron microscopy, and atomically flat. Transport measurements were performed on the STO/Si structures in a Van der Pauw configuration. The P(O2) during growth determines the conduction behavior which changes from strongly localized transport that fits a Variable Range Hopping (VRH) model (low P(O2) -high disorder) to thermally activated transport (high P(O2) -low disorder). The resistivity of the strongly disordered STO/Si films decreased from 1 Ohm .cm to 3x10-2 Ohm .cm as the film thickness increased (3nm-60nm). The perpendicular magnetoresistance (MR) is positive at 300K and becomes negative at T =3-20K. We consider competing effects on the STO/Si heterostructure such as 1.7% compressive strain induced by lattice mismatch to Si, defects due to oxygen vacancies, the bulk STO antiferrodistortive phase transition at 105K, and structural dislocations. Funded by NSF Career Award DMR-1255629.

  12. Enhancement of the luminescent characteristics of Li-doped CaTiO3 : Pr3+ thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Hyun Kyoung; Chung, Jong Won; Moon, Byung Kee; Choi, Byung Chun; Jeong, Jung Hyun; Kim, Kwang Ho

    2009-04-01

    The influence of Li doping on the crystallization, surface morphology and luminescent properties of CaTiO3 : Pr3+ films has been investigated. The films were grown on Al2O3 (0 0 0 1) substrates using the pulsed laser deposition method under different oxygen pressures. The substrate temperature was fixed at 700 °C and the range of oxygen pressure was 100-400 mTorr. The crystallinity and surface morphology of the films were investigated using x-ray diffraction and atomic force microscopy, respectively. The emitted radiation at 322 nm excitation was dominated by a red emission peak at 613 nm radiated from the transition of 1D2 → 3H4 of Pr3+ ions. In particular, the incorporation of Li+ ions into the CaTiO3 lattice could induce the increase in the intensity of the photoluminescence. The enhanced luminescence may result not only from the improved crystallinity but also from the reduced internal reflections caused by rougher surfaces. The luminescent intensity and surface roughness exhibited similar behaviour as a function of the oxygen pressure.

  13. Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

    NASA Astrophysics Data System (ADS)

    Kumagai, Yoshinao; Enatsu, Yuuki; Ishizuki, Masanari; Kubota, Yuki; Tajima, Jumpei; Nagashima, Toru; Murakami, Hisashi; Takada, Kazuya; Koukitu, Akinori

    2010-09-01

    Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50-200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H 2 and NH 3, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10 8 cm -2.

  14. NiO Nanofibers as a Candidate for a Nanophotocathode

    PubMed Central

    Macdonald, Thomas J.; Xu, Jie; Elmas, Sait; Mange, Yatin J.; Skinner, William M.; Xu, Haolan; Nann, Thomas

    2014-01-01

    p-type NiO nanofibers have been synthesized from a simple electrospinning and sintering procedure. For the first time, p-type nanofibers have been electrospun onto a conductive fluorine doped tin oxide (FTO) surface. The properties of the NiO nanofibers have been directly compared to that of bulk NiO nanopowder. We have observed a p-type photocurrent for a NiO photocathode fabricated on an FTO substrate.

  15. Surface atomic structure of epitaxial LaNiO3 thin films studied by in situ LEED-I (V )

    NASA Astrophysics Data System (ADS)

    Ruf, J. P.; King, P. D. C.; Nascimento, V. B.; Schlom, D. G.; Shen, K. M.

    2017-03-01

    We report in situ low-energy electron diffraction intensity versus voltage [LEED-I (V )] studies of the surface atomic structure of epitaxially grown (001) pc-oriented (pc=pseudocubic ) thin films of the correlated 3 d transition-metal oxide LaNiO3. Our analysis indicates the presence of large out-of-plane bucklings of the topmost LaO layers but only minor bucklings of the topmost NiO2 layers, in close agreement with earlier surface x-ray diffraction data. In view of materials design approaches that have suggested using atomic-scale polar structural distortions to produce designer electronic structures in artificial nickelate heterostructures, we propose that the broken inversion symmetry inherent to the surface of rare-earth nickelate thin films offers a similar opportunity to study the coupling between atomic structure and electronic properties in this family of materials.

  16. Effect of Ga+ irradiation in molecular-beam epitaxy grown Pt/Co/Pt thin films studied by magneto-optic spectroscopy

    NASA Astrophysics Data System (ADS)

    Jakubisova-Liskova, E.; Visnovsky, S.; Wawro, A.; Baczewski, L. T.; Mazalski, P.; Maziewski, A.; Liedke, M. O.; McCord, J.; Fassbender, J.

    2014-05-01

    In-depth profile changes induced by Ga+ ion irradiation in Pt(5 nm)/Co(3.3 nm)/Pt(20 nm)/Mo(20 nm) sandwiches MBE grown on Al2O3 substrates are deduced from complex magneto-optic polar Kerr effect (PMOKE) measurements at photon energies between 1 and 5 eV. The Ga+ irradiation stimulates a redistribution of Pt and Co and leads to broadening of alloyed regions at Pt-Co and Co-Pt interfaces, which is evaluated using PMOKE spectra. The effect of four Ga+ fluences D between zero and 6 × 1015 Ga+/cm2 was studied. The observed PMOKE azimuth rotation peak centered at 4.5 eV reaches the maximum of 0.42° at D = 1 × 1015 Ga+/cm2 and becomes thus enhanced by a factor of 3.2 with respect to that in the non-irradiated sample. At D = 6 × 1015 Ga+/cm2 the peak amplitude falls to 0.05°. To find the in-depth profile of Co concentration s in the sandwiches as a function of D, the PMOKE azimuth rotation and ellipticity spectra are compared with a multilayer model, where ideal flat interfaces are replaced by sequences of CosPt1-s layers. The dependence on D is compared with that evaluated by simulations of the structural effects of ion irradiation. At the highest D, the irradiation produces an almost complete erosion of the top Pt and Co accompanied by mixing at the Pt-Mo interface.

  17. Tuning of the surface plasmon resonance in TiO{sub 2}/Au thin films grown by magnetron sputtering: The effect of thermal annealing

    SciTech Connect

    Torrell, M.; Kabir, R.; Cunha, L.; Vasilevskiy, M. I.; Vaz, F.; Cavaleiro, A.; Alves, E.; Barradas, N. P.

    2011-04-01

    Nanocomposites consisting of a dielectric matrix, such as TiO{sub 2}, with embedded noble metal nanoparticles (NPs) possess specific optical properties due to the surface plasmon resonance (SPR) effect, interesting for several applications. The aim of this work is to demonstrate that these properties are sensitive to the nanostructure of magnetron-sputtered TiO{sub 2}/Au thin films, which can be tuned by annealing. We study the role of the shape and size distribution of the NPs, as well as the influence of the crystallinity and phase composition of the host matrix on the optical response of the films. All these characteristics can be modified by vacuum annealing treatments of the deposited films. A theoretical interpretation and modeling of the experimental results obtained is presented. The model involves a modified Maxwell-Garnett approach for the effective dielectric function of the composite (describing the SPR effect) and the transfer matrix formalism for multilayer optics. Input data are based on the experimental information obtained from the detailed structural characterization of the films. It is shown that the annealing treatments can be used for controlling the optical properties of the composite films, making them attractive for decorative coatings.

  18. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  19. Photovoltaic properties of Aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} thin films grown by pulsed laser deposition

    SciTech Connect

    Kooriyattil, Sudheendran; Katiyar, Rajesh K.; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Morell, Gerardo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-08-18

    We report a remarkable photovoltaic effect in pulsed laser deposited multiferroic aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} (BFTO) thin films sandwiched between ZnO:Al transparent conductive oxide top electrode and SrRuO{sub 3} bottom electrode fabricated on amorphous fused silica substrates. The structural and micro structural properties of these films were analysed by X-ray diffraction and atomic force microscopy techniques. The films were showing a photo sensitive ferroelectric behaviour with a notable apparent polarization in the range of 10–15 μC/cm{sup 2}. These films also exhibited a switchable photo-response and this parameter was observed to be sensitive to polarisation field and the polarization direction. The device shows a large ON/OFF photo current ratio with an open circuit voltage of 0.14 V. The photo response at zero bias of this BFTO based heterostructures showed rapid increase to a saturation value of 6 μA at zero bias.

  20. Optical, vibrational and compositional study of amorphous silicon oxynitride thin films grown by an RF plasma using N 2O + SiH 4 gas mixtures

    NASA Astrophysics Data System (ADS)

    Campmany, J.; Andújar, J. L.; Canillas, A.; Costa, J.; Bertran, E.

    1993-06-01

    Highly transparent hydrogenated amorphous silicon oxynitride (a-Si xO y:H) thin films were obtained in an RF plasma reactor from SiH 4 and N 2O gases at 300°C of substrate temperature. This paper presents a comparative study of the optical, vibrational and compositional properties of the a-SiN xO y:H films through spectroscopic ellipsometry, FT-IR and XPS techniques. Ellipsometric results are modeled assuming a simple structure air/film/substrate and applying the Bruggeman effective medium approximation for a mixture of stoichiometric Si 3N 4, SiO 2 and SiO materials. These results are interpreted in terms of the chemical reactions taking place in the plasma and the microstructure of the films. Those obtained from N 2O/SiH 4 ≥ 20 can be interpreted as a mixture of phases. Below this ratio, the films obtained can be interpreted in terms of random models.

  1. Toward DNA electrochemical sensing by free-standing ZnO nanosheets grown on 2D thin-layered MoS2.

    PubMed

    Yang, Tao; Chen, Meijing; Kong, Qianqian; Luo, Xiliang; Jiao, Kui

    2017-03-15

    Very recently, the 2-dimensional MoS2 layer as base substrate integrated with other materials has caused people's emerging attention. In this paper, a thin-layered MoS2 was prepared through an ultrasonic exfoliation method from bulk MoS2 and then the free-standing ZnO nanosheet was electrodeposited on the MoS2 scaffold for DNA sensing. The ZnO/MoS2 nanocomposite revealed smooth and vertical nanosheets morphology by scanning electron microscopy, compared with the sole MoS2 and sole ZnO. Importantly, the partially negative charged MoS2 layer is beneficial to the nucleation and growth of ZnO nanosheets under the effect of electrostatic interactions. Classic methylene blue, which possesses different affinities to dsDNA and ssDNA, was adopted as the measure signal to confirm the immobilization and hybridization of DNA on ZnO nanosheets and pursue the optimal synthetic conditions. And the results demonstrated that the free-standing ZnO/MoS2 nanosheets had low detection limit (6.6×10(-16)M) and has a positive influence on DNA immobilization and hybridization.

  2. Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

    SciTech Connect

    Liu, S.; Ma, B.; Narayanan, M.; Balachandran, U.

    2012-01-01

    Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 x 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.

  3. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial NiTiO3 Thin Films Grown On Different Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Kovarik, Libor; Hu, Dehong; Chambers, Scott A.

    2015-08-14

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on different substrates, and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO3 films were deposited on Al2O3, Fe2O3, and LiNbO3 substrates by pulsed laser deposition, and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO3 is polarization-induced. From the substrates studied here, the perovskite substrate LiNbO3 proved to be the most promising one for strong multiferroism.

  4. Strain-Dependence of the Structure and Ferroic Properties of Epitaxial NiTiO 3 Thin Films Grown on Different Substrates

    DOE PAGES

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; ...

    2015-01-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO 3 (M = Fe, Mn, and Ni). We set out to stabilize this metastable perovskite structure by growing NiTiO 3 epitaxially on different substrates and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO 3 films were deposited on Al 2 O 3 , Fe 2 O 3 , and LiNbO 3 substrates by pulsed laser deposition and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from X-raymore » diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain and highlight our ability to control the ferroic properties in NiTiO 3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO 3 is polarization induced. From the substrates studied here, the perovskite substrate LiNbO 3 proved to be the most promising one for strong multiferroism.« less

  5. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial Ni-1 (-) Ti-x(1) (-) O-y(3) Thin Films Grown On Sapphire Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Stephens, Sean A.; Manandhar, Sandeep; Shutthanandan, V.; Colby, Robert J.; Hu, Dehong; Shelton, William A.; Chambers, Scott A.

    2015-03-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on sapphire Al2O3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni1-xTi1-yO3 films of different Ni/Ti ratios and thicknesses were deposited on Al2O3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Néel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by film stoichiometry and thickness.

  6. rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

    SciTech Connect

    Hoey, Megan L.; Carlson, J. B.; Osgood, R. M. III; Kimball, B.; Buchwald, W.

    2010-10-11

    Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.

  7. Atomically-Resolved In-Situ Studies of Surface Structure Evolution of PLD-Grown La5/8Ca3/8MnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Tselev, Alexander; Vasudevan, Rama; Qiao, Liang; Biegalski, Michael; Baddorf, Arthur; Kalinin, Sergei

    2014-03-01

    Here, we report atomically resolved in-situ Scanning Tunneling Microscopy (STM) studies of La5/8Ca3/8MnO3 (LCMO) thin films grown by RHEED-assisted PLD. Films were grown on TiO2-terminated (001) SrTiO3 substrates at a substrate temperature of 750 °C and O2 pressure of 50 mTorr. In-situ UHV STM was performed at room temperature. LCMO is known to grow in layer-by layer (LBL) mode. We find that the initial growth does not follow the best physically possible LBL growth (with only three u.c. layers exposed). RHEED oscillations decay during deposition of the first 10-15th unit cells. Subsequently, the RHEED intensity oscillations grow and remain persistent. STM images of 16 u.c.-thick films revealed surfaces with up to five u.c. layers being exposed in a stepped island-like morphology with 1/2 u.c. step heights. Such morphology allowed studies of atomic surface structure of both terminations. 25 u.c.-thick samples were found to be almost single-terminated. The minor termination is ordered and exhibits (1x1) reconstructions; RHEED suggests that this termination is the La/Ca-O termination. A 250 u.c.-thick film was found to be single-terminated with only three u.c. layers exposed. This research was sponsored by DMSE (AT, RV, SVK) and by SUFD (LQ, MDB, APB) of BES, DOE. Research was conducted at the CNMS, which is sponsored at ORNL by SUFD, BES, DOE.

  8. High transmittance cadmium oxysulfide Cd(S,O) buffer layer grown by triton X-100 mediated chemical bath deposition for thin-film heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ballipinar, Faruk; Rastogi, A. C.

    2017-01-01

    Polycrystalline 100-190 nm Cd(S,O) n-type semiconductor thin films of high transparency in the visible range are deposited by a surfactant Triton X-100 mediated chemical bath deposition process. The crystalline structure of the films revealed by X-ray diffraction data shows a cubic-CdO phase signified by (111) and (200) planes alongside the (002), (220), and (110) planes from hexagonal-CdS. The invariance of the 2θ position of the (002) CdS diffraction is interpreted in terms of the growth of the composite film essentially by the formation of a dilute interstitial alloy of CdO and CdS. This is confirmed by Raman spectra which, besides the CdS 1LO and 2LO modes at 300 and 600 cm-1, also show Raman lines from CdO at 1098 cm-1 and 952 cm-1 assigned as overtone of 2LO phonon modes and 556 cm-1 due to band crossing between LO and TO modes of CdO. Optical spectra of Cd(S,O) films show a median transmittance of >85% compared to ˜70% for CdS films in the 550-1000 nm wavelength range. The Cd(S,O) films show optical bandgap varying from 2.34 to 2.26 eV with increasing CdO fraction but retain high sub-bandgap transmission and sharp band edge threshold. The Cd(S,O) films thus offer an alternative to the CdS buffer layer in the heterojunction solar cells, which has major shortcoming of poor stability and high sub-bandgap absorption. The photoluminescence spectra of Cd(S,O) films show three green bands, of which one is the near band edge transition at 511.5 nm, the same as in CdS, the second band at 526.0 nm that red shifted from the CdS position is due to shallow donor-acceptor defects arising from structural change due to CdO, and the third band at 543.6 nm (2.28 eV) originates from direct band transition in CdO. The growth mechanism of Cd(S,O) films is described, which invokes that the Triton X-100 molecule modifies the microenvironment around adsorbed [Cd(NH3)4]2+ species, thereby inducing two concurrent reactions, one with SH- species that cause CdS formation and the

  9. Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond

    NASA Astrophysics Data System (ADS)

    Kaliginedi, Veerabhadrarao; Ozawa, Hiroaki; Kuzume, Akiyoshi; Maharajan, Sivarajakumar; Pobelov, Ilya V.; Kwon, Nam Hee; Mohos, Miklos; Broekmann, Peter; Fromm, Katharina M.; Haga, Masa-Aki; Wandlowski, Thomas

    2015-10-01

    Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge-discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g-1 at a current density of 10 μA cm-2 and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications

  10. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ghazai, Alaa Jabbar; Hassan, Haslan Abu; Hassan, Zanuri Bint

    2016-07-01

    The objective of the current study is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via molecular beam epitaxy (MBE) on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications. Due to mismatch problems between the epilayer and substrates, the AlN buffer layer was inserted at low temperature to reduce the lattice mismatch to approximately 4% for the samples, to produce high-quality epitaxy films. Defect-free films with high structural, optical and electrical qualities were obtained. Their small full width at half maximum, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any separation phases or cracks were characterized using X-ray diffraction analysis. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using photoluminescence and UV-VIS spectroscopy; however, a red shift was observed in the PL peak of the near band edge of 3.158 eV of the sample on Si substrate compared with 3.37 eV for the sample on sapphire substrate which is attributed to the compressive strain and occurrence of the quantum confined Stark effect.

  11. Synthesis and characterization of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} thin film grown on LaAlO{sub 3} substrate by pulsed laser deposition technique

    SciTech Connect

    Bhat, Irshad Husain, Shahid; Patil, S. I.; Khan, Wasi; Ali, S. Asad

    2015-06-24

    We report the structural, morphological and magneto-transport properties of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} (LTMO) thin film grown on (001) LaAlO{sub 3} single crystal substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) results confirm that the film has good crystalline quality, single phase, and c-axis orientation. The atomic force microscopy (AFM) results have revealed that the film consists of grains with the average size in a range of 20–30 nm and root-mean square (rms) roughness of 0.27nm. The resistivity versus temperature measurement exhibits an insulator to metal transition (MIT). We have noticed a huge value of magnetoresistance (∼93%) close to MIT in presence of 8T field. X-ray photoemission spectroscopy confirms the electron doping and suggests that Te ions could be in the Te{sup 4+} state, while the Mn ions stay in the Mn{sup 2+} and Mn{sup 3+} valence state.

  12. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Ganesh, V.; Goh, B. T.; Dee, C. F.; Mohmad, A. R.; Rahman, S. A.

    2016-08-01

    In-rich InxAl1-xN thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV-vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the InxAl1-xN films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the InxAl1-xN films showed that by increasing the N2 flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich InxAl1-xN films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90-1.17 eV which is desirable for the application of full spectra solar cells.

  13. Substrate-induced dielectric polarization in thin films of lead-free (Sr0.5Bi0.5)2Mn2-xTixO6-δ perovskites grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Álvarez-Serrano, I.; Ruiz de Larramendi, I.; López, M. L.; Veiga, M. L.

    2017-03-01

    Thin films of SrBiMn2-xTixO6-δ have been fabricated by Pulsed Laser Deposition on SrTiO3 [100] and [111] substrates. Their texture, width, homogeneity and morphology are evaluated by means of XRD, SEM, XPS, whereas complex impedance spectroscopy is employed to analyze their electrical response. The thickness values range between 80 and 900 nm depending on the experimental conditions. The epitaxial growing could be interpreted in terms of two contributions of microstructural origin: a matrix part and some polycrystalline surface formations (hemi-spheres). Texture studies suggest a fiber-type orientated morphology coherently with the Scanning Electron Microscopy images. XPS analyses indicate a segregation regarding A-sublattice cations, which features depend on the substrate orientation. This segregation could be connected to the development of nanopolar regions. Impedance data show the electrical polarization in the samples to be enhanced compared to bulk response of corresponding powdered samples. A relaxor behavior which fits a Vogel-Fulcher law is obtained for x = 0.50 whereas an almost frequency-independent relaxor ferroelectric behavior is registered for the thinnest film of x = 0.25 composition grown on SrTiO3 [111] substrate. The influence of compositional and structural aspects in the obtained dielectric response is analyzed.

  14. Band Diagram and Rate Analysis of Thin Film Spinel LiMn 2 O 4 Formed by Electrochemical Conversion of ALD-Grown MnO

    SciTech Connect

    Young, Matthias J.; Schnabel, Hans-Dieter; Holder, Aaron M.; George, Steven M.; Musgrave, Charles B.

    2016-09-22

    Nanoscale spinel lithium manganese oxide is of interest as a high-rate cathode material for advanced battery technologies among other electrochemical applications. In this work, the synthesis of ultrathin films of spinel lithium manganese oxide (LiMn2O4) between 20 and 200 nm in thickness by room-temperature electrochemical conversion of MnO grown by atomic layer deposition (ALD) is demonstrated. The charge storage properties of LiMn2O4 thin films in electrolytes containing Li+, Na+, K+, and Mg2+ are investigated. A unified electrochemical band-diagram (UEB) analysis of LiMn2O4 informed by screened hybrid density functional theory calculations is also employed to expand on existing understanding of the underpinnings of charge storage and stability in LiMn2O4. It is shown that the incorporation of Li+ or other cations into the host manganese dioxide spinel structure (..lambda..-MnO2) stabilizes electronic states from the conduction band which align with the known redox potentials of LiMn2O4. Furthermore, the cyclic voltammetry experiments demonstrate that up to 30% of the capacity of LiMn2O4 arises from bulk electronic charge-switching which does not require compensating cation mass transport. The hybrid ALD-electrochemical synthesis, UEB analysis, and unique charge storage mechanism described here provide a fundamental framework to guide the development of future nanoscale electrode materials for ion-incorporation charge storage.

  15. Transparent Conducting ZnO:B Thin Films Grown by Ultraviolet Light Assisted Metal Organic Chemical Vapor Deposition Using Triethylboron for Cu(In,Ga)Se2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Kobayashi, Taizo; Yamauchi, Kotaro; Mise, Takahiro; Nakada, Tokio

    2012-10-01

    High-efficiency cadmium-free Cu(In,Ga)Se2 (CIGS) thin-film solar cells have been fabricated using a zinc compound buffer layer deposited by the chemical bath deposition (CBD) process. However, the zinc compound buffer layers such as ZnS(O,OH) are prone to plasma-induced damage during the subsequent ZnO sputtering process. A process causing less damage such as metal-organic chemical vapor deposition (MOCVD) is thus required for ZnO-based transparent conducting oxide (TCO) layers. In the present work, the boron-doped zinc oxide (ZnO:B) films were grown by MOCVD using diethyl zinc (DEZ), H2O, and low-toxicity triethylboron (TEB). An UV-assisted MOCVD process was developed in order to reduce the resistivity of ZnO:B films. As a result, the resisitivity significantly decreased together with the increased electron mobility and carrier concentration. The comparison of performance was also carried out for the ZnS(O,OH)/CIGS solar cells with MOCVD-deposited ZnO:B and sputter-deposited ZnO:Al window layers.

  16. Process modeling and analysis of structure and stoichiometry of magnesium oxide nano thin films grown by molecular beam epitaxy on 6 hydrogen-silicon carbide substrates

    NASA Astrophysics Data System (ADS)

    Uddin, Ghulam Moeen

    In recent years there has been an increasing interest in effective integration of nano scale functional oxides with semiconductors for third and fourth generation nano devices including high-K dielectrics based electronic devices and paradigm-shifting spintronics-based circuits. In this research we investigate the growth of MgO nano thin films on 6H-SiC substrate in a molecular beam epitaxy process. Here MgO serves as a template layer to minimize the mismatch with both substrate and a functional oxide films such as BTO and BaM. In this research we constructed neural network based process models using historical experimental data. Based on these process models we performed structural and stoichiometric analyses through both design of experiments and Monte Carlo simulation. We found that the percentage starting oxygen on the substrate is the most critical variable that promotes the undesired bonding states, i.e., Mg-OH and excessive strain in film crystalline structure. In addition the impact of percentage of starting oxygen on structure and stoichiometry is affected by the film thickness. The interaction between substrate temperature and oxygen on the starting substrate surface is the critical pair that affects the dynamics of Mg-OH bonding state. This study helped us analyze the process behavior and gain process knowledge to conduct systematic experimentation. After conducting the systematic experiments we quantitatively studied the causal relationship the undesired bonding states and the percentage starting oxygen at 3 levels of film thickness. Moreover, the cleaning of silicon carbide (6H-SiC) substrate surface is an essential and important step to grow MgO films with minimum undesired bonding states. We investigated high temperature hydrogen etching process to clean the substrate surface. In this research we studied the impact of cleaning time and cleaning temperature by analyzing the reflection high energy electron diffraction (RHEED) structural performance

  17. Facile synthesis of a mechanically robust and highly porous NiO film with excellent electrocatalytic activity towards methanol oxidation

    NASA Astrophysics Data System (ADS)

    Wang, Luoyuan; Zhang, Guoge; Liu, Yan; Li, Wenfang; Lu, Wei; Huang, Haitao

    2016-05-01

    Considerable research is being conducted in searching for effective anode catalysts in alkaline direct methanol fuel cells (DMFCs). Although significant progress has been achieved, it is still challenging to prepare non-Pt catalysts with both excellent activity and good durability. Herein, a highly porous NiO film is developed by a facile and fast anodization approach. The anodic NiO film demonstrates a high surface area, large mesopore volume and small crystallite size, leading to facilitated adsorption of reaction species, easy electrolyte penetration and fast reaction kinetics. Furthermore, as anodic NiO is grown in situ on a metallic substrate with strong adhesion strength and good electrical contact, it can be used directly as an anode catalyst for methanol oxidation without the need to add any binder or conducting agent. Such an additive-free approach greatly expedites the catalyst preparation process. The anodic NiO shows lower methanol oxidation potential, higher oxidation current and better catalytic durability than most of the state-of-the-art Ni-based catalysts reported elsewhere. As anodization is a simple, low cost and easily scaled up method, the work described here provides an exciting direction to speed up the practical application of alkaline DMFCs.Considerable research is being conducted in searching for effective anode catalysts in alkaline direct methanol fuel cells (DMFCs). Although significant progress has been achieved, it is still challenging to prepare non-Pt catalysts with both excellent activity and good durability. Herein, a highly porous NiO film is developed by a facile and fast anodization approach. The anodic NiO film demonstrates a high surface area, large mesopore volume and small crystallite size, leading to facilitated adsorption of reaction species, easy electrolyte penetration and fast reaction kinetics. Furthermore, as anodic NiO is grown in situ on a metallic substrate with strong adhesion strength and good electrical contact

  18. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  19. Pulse sharpening effects of thin film ferroelectric transmission lines

    NASA Astrophysics Data System (ADS)

    Sleezer, Robert J.

    Advances in material science have resulted in the development of electrically nonlinear high dielectric thin film ferroelectrics, which have led to new opportunities for the creation of novel devices. This dissertation investigated one such device: a low voltage nonlinear transmission line (NLTL). A finite element simulation of ferroelectric transmission lines showed that NLTLs are capable of creating shockwaves. Additionally, if the losses are kept sufficiently low, it was shown that voltage gain should be possible. Furthermore, a method of accounting for material dispersion was developed. Results from simulations including material dispersion showed that temporal solitons might be possible from a continuous ferroelectric based nonlinear transmission line. Fabrication of a thin film ferroelectric NLTL required the growth of a ferroelectric material on a conductive substrate. Barium titanate (BTO), which has been gaining popularity due to its high dielectric constant, strong nonlinearity, and lack of lead, was grown. Molecular beam epitaxy and sol-gel growth were both explored and sol-gel was chosen as the growth method for the final device, in part due to its ability to grow BTO thin films on highly conductive nickel substrates. Samples approximately 330 nm thick were grown by this method. Oxygen vacancies in the as grown BTO films were filled by annealing in low pressure oxygen environments. X-ray diffraction measurements were used to determine an O2 pressure for oxidation that was slightly less than the pressure at which NiO forms to ensure maximum filling of the vacancies in the BTO. Grown samples were successfully shown to have ferroelectric properties. A lumped element transmission line was fabricated using discrete capacitors and inductors with a sample as described above. Test capacitors were fabricated and used to determine the dielectric constant of the BTO thin film. This was used to select capacitor pad sizes and inductor values to create a 50 Ohm line

  20. Nanostructured light-absorbing crystalline CuIn{sub (1–x)}Ga{sub x}Se{sub 2} thin films grown through high flux, low energy ion irradiation

    SciTech Connect

    Hall, Allen J.; Hebert, Damon; Rockett, Angus A.; Shah, Amish B.; Bettge, Martin

    2013-10-21

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620–740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600–670 °C) and high rf power (80–400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by (112){sub T} facets. At 80–400 W rf power and 640–740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong (112){sub T} texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0–50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of (112){sub T} planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  1. Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories

    NASA Astrophysics Data System (ADS)

    Nishi, Yusuke; Kimoto, Tsunenobu

    2016-09-01

    Resistive switching (RS) in metal/oxide/metal stack structures plays a key role in resistive RAM. The formation and rupture of conductive filaments have been widely accepted as an origin of RS mechanism especially in binary transition metal oxides. Forming exhibits some analogies with a dielectric breakdown of SiO2 thin films. In this study, Time-Dependent Forming (TDF) characteristics of Pt/NiO/Pt stack structures have been investigated. The results revealed that the formation of conductive filaments at the forming process by applying constant voltage followed a weakest-link theory and that the weakest spots were almost randomly distributed in NiO thin films according to the Poisson statistics. Furthermore, the distribution of TDF characteristics depends on NiO crystallinity. A small variation of initial resistance tends to result in a large variation of time to forming and vice versa.

  2. Enhancement of crystallographic and electrical properties in 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 thin films grown on Pb(Zr,Ti)O3-buffered platinized silicon substrates by sol-gel process

    NASA Astrophysics Data System (ADS)

    Zhu, X. H.; Le Rhun, G.; Defaÿ, E.; Aïd, M.

    2010-02-01

    We present here a comparative study of sol-gel-derived 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 (PMNT) thin films about 120 nm in thickness that were, respectively, deposited directly on a platinized Si substrate and on a Pb(Zr,Ti)O3 (PZT)-buffered one, but were both annealed at 750 °C in ambient air. It was found that the PZT buffer layer plays an important role in the enhancement of crystallographic and electrical properties of PMNT thin films. The PMNT film grown on PZT-buffered platinized Si substrate showed a nearly pure perovskite structure, while the film without buffer layer contained a big amount of pyrochlore phase. Also, the PZT buffer layer changed the preferred orientation of PMNT thin films from (111) to mainly (110) orientation, and helped to improve the films' densification and microstructural evolution. Coherent with what was observed comparatively in structural characterization, enhanced dielectric and leakage current characteristics were observed in the film with buffer layer. For the PMNT film grown directly on Pt-coated Si substrate, the dielectric permittivity is as low as 570, whereas the value is enhanced to 1200 for the PMNT film with PZT buffer layer. Moreover, the leakage current density of PMNT thin films is reduced remarkably, roughly 4-5 orders of magnitude lower, by introducing the PZT buffer layer.

  3. Solution-Processible Crystalline NiO Nanoparticles for High-Performance Planar Perovskite Photovoltaic Cells

    PubMed Central

    Kwon, Uisik; Kim, Bong-Gi; Nguyen, Duc Cuong; Park, Jong-Hyeon; Ha, Na Young; Kim, Seung-Joo; Ko, Seung Hwan; Lee, Soonil; Lee, Daeho; Park, Hui Joon

    2016-01-01

    In this work, we report on solution-based p-i-n-type planar-structured CH3NH3PbI3 perovskite photovoltaic (PV) cells, in which precrystallized NiO nanoparticles (NPs) without post-treatment are used to form a hole transport layer (HTL). X-ray diffraction and high-resolution transmission electron microscopy showed the crystallinity of the NPs, and atomic force microscopy and scanning electron microscopy confirmed the uniform surfaces of the resultant NiO thin film and the subsequent perovskite photoactive layer. Compared to the conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, the NiO HTL had excellent energy-level alignment with that of CH3NH3PbI3 and improved electron-blocking capability, as analyzed by photoelectron spectroscopy and diode modeling, resulting in Voc ~0.13 V higher than conventional PEDOT:PSS-based devices. Consequently, a power conversion efficiency (PCE) of 15.4% with a high fill factor (FF, 0.74), short-circuit current density (Jsc, 20.2 mA·cm−2), and open circuit voltage (Voc, 1.04 V) having negligible hysteresis and superior air stability has been achieved. PMID:27465263

  4. Solution-Processible Crystalline NiO Nanoparticles for High-Performance Planar Perovskite Photovoltaic Cells

    NASA Astrophysics Data System (ADS)

    Kwon, Uisik; Kim, Bong-Gi; Nguyen, Duc Cuong; Park, Jong-Hyeon; Ha, Na Young; Kim, Seung-Joo; Ko, Seung Hwan; Lee, Soonil; Lee, Daeho; Park, Hui Joon

    2016-07-01

    In this work, we report on solution-based p-i-n-type planar-structured CH3NH3PbI3 perovskite photovoltaic (PV) cells, in which precrystallized NiO nanoparticles (NPs) without post-treatment are used to form a hole transport layer (HTL). X-ray diffraction and high-resolution transmission electron microscopy showed the crystallinity of the NPs, and atomic force microscopy and scanning electron microscopy confirmed the uniform surfaces of the resultant NiO thin film and the subsequent perovskite photoactive layer. Compared to the conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, the NiO HTL had excellent energy-level alignment with that of CH3NH3PbI3 and improved electron-blocking capability, as analyzed by photoelectron spectroscopy and diode modeling, resulting in Voc ~0.13 V higher than conventional PEDOT:PSS-based devices. Consequently, a power conversion efficiency (PCE) of 15.4% with a high fill factor (FF, 0.74), short-circuit current density (Jsc, 20.2 mA·cm‑2), and open circuit voltage (Voc, 1.04 V) having negligible hysteresis and superior air stability has been achieved.

  5. Synthesis and electrochemical properties of NiO nanospindles

    SciTech Connect

    Zhou, Hai; Lv, Baoliang; Xu, Yao; Wu, Dong

    2014-02-01

    Graphical abstract: NiO nanospindles with a different electrochemical activity as compared to those previous reports were synthesized via an agglomeration–dissolution–recrystallization growth process without the addition of any surfactant. - Highlights: • NiO nanospindles were synthesized without the addition of any surfactant. • The agglomeration–dissolution–recrystallization growth process was used to explain the precursors’ formation process of the spindle-like NiO. • As-obtained spindle-like NiO showed a different electrochemical activity as compared to those previous reports. - Abstract: NiO nanospindles were successfully synthesized via a hydrothermal and post-treatment method. The as-synthesized nanospindles were about several hundred nanometers in width and about one micrometer in length. X-ray diffraction (XRD) analysis revealed that the spindle-like structure was cubic NiO phase crystalline. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) analysis indicated that these NiO nanospindles were of single crystal nature. On the basis of time-dependent experiments, a possible agglomeration–dissolution–recrystallization growth process was proposed to explain the formation process of the spindle-like precursors. The cyclic voltammetry (CV) measurement showed that the as-prepared spindle-like NiO exhibited a pseudo-capacitance behavior.

  6. Antiferromagnetic domains in epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Scholl, Andreas

    2002-03-01

    Interface and surface effects play a central role in modern magnet structures. Magnetic exchange coupling and bias, spin injection across the boundary between magnetic and non-magnetic layers, and the surface and interface anisotropy in multilayers are examples for interface phenomena that are utilized in magneto-electronics. In particular, the microscopic origin of exchange bias at ferromagnet/antiferromagnet interfaces is still an unsolved problem despite of intense research, driven by the important application of exchange bias in hard disk read-heads and magnetic RAM. Knowledge of the microscopic magnetic structure in antiferromagnetic thin films and surfaces is of crucial importance for a better understanding of the exchange bias effect. Microscopic experiments on magnetically coupled ferromagnet/antiferromagnet layers using X-ray Photoemission Electron Microscopy (X-PEEM) now provide a new insight into the microscopic processes at this important interface. Using a combination of x-ray magnetic dichroism (XMD) contrast and microscopic electron yield detection we have resolved the magnetic domain structure in LaFeO3 and NiO thin films and crystals. The antiferromagnetic domain structure is linked to the crystallographic structure of the material and vanishes approaching the magnetic ordering temperature. Ferromagnetic films grown on the antiferromagnetic substrate show a corresponding ferromagnetic domain structure, an uniaxial exchange anistropy and a local bias which increases with decreasing domain size, suggesting a statistical origin of the bias effect. The role of uncompensated interface spins will also be discussed. We will present first experiments on magnetic interlayer coupling across metallic antiferromagnets, which suggest a similar origin of bias in full-metallic exchange bias system. A. Scholl et al., Science 287, 1014 (2000), F. Nolting et al., Nature 405, 767 (2000), H. Ohldag et al., Phys. Rev. Lett. 86, 2878 (2001)

  7. Ni3Si2 nanowires grown in situ on Ni foam for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Jiang, Yizhe; Li, Zhihui; Li, Beibei; Zhang, Jinying; Niu, Chunming

    2016-07-01

    Ni3Si2 nanowires and nanoawls have grown in situ on the surface of Ni foams by a controlled low pressure chemical vapor deposition process. Structural characterization shows that the individual Ni3Si2 nanowire is single crystal covered with a thin layer (1-2 nm) of SiO2 with a diameter of ∼20-30 nm and length of ten's micrometers. Individual nanoawl with a circular cone shape is polycrystalline. Both Ni3Si2 nanowire and nanoawl samples are evaluated as potential electrode materials for supercapacitors. The nanowire electrode delivers a very high specific capacitance and excellent rate capability. A specific capacitance of 760 F g-1 is measured at current density of 0.5 A g-1, which decreases to 518 F g-1 when the current density increases to 10 A g-1. The capacitance is dominated by pseudocapacitance with a mechanism similar to that of NiO or Ni(OH)2 widely studied in the literature. An asymmetric supercapacitor fabricated by pairing Ni3Si2 nanowire electrode with an activated carbon electrode exhibits energy densities of 17.5 Wh kg-1 and 8.8 Wh kg-1 at power densites of 301 W kg-1 and 3000 W kg-1.

  8. Synthesis and microwave absorption enhancement of graphene@Fe3O4@SiO2@NiO nanosheet hierarchical structures.

    PubMed

    Wang, Lei; Huang, Ying; Sun, Xu; Huang, Haijian; Liu, Panbo; Zong, Meng; Wang, Yan

    2014-03-21

    Hierarchical structures of graphene@Fe3O4@SiO2@NiO nanosheets were prepared by combining the versatile sol-gel process with a hydrothermal reaction. Graphene@Fe3O4 composites were first synthesized by the reduction reaction between FeCl3 and diethylene glycol (DEG) in the presence of GO. Then, graphene@Fe3O4 was coated with SiO2 to obtain graphene@Fe3O4@SiO2. Finally, NiO nanosheets were grown perpendicularly on the surface of graphene@Fe3O4@SiO2 and graphene@Fe3O4@SiO2@NiO nanosheet hierarchical structures were formed. Moreover, the microwave absorption properties of both graphene@Fe3O4 and graphene@Fe3O4@SiO2@NiO nanosheets were investigated between 2 and 18 GHz microwave frequency bands. The electromagnetic data demonstrate that graphene@Fe3O4@SiO2@NiO nanosheet hierarchical structures exhibit significantly enhanced microwave absorption properties compared with graphene@Fe3O4, which probably originate from the unique hierarchical structure with a large surface area and high porosity.

  9. Structural, morphological, optical and electrical properties of NiO films prepared on Si (100) and glass substrates at different thicknesses

    NASA Astrophysics Data System (ADS)

    Ahmed, Anas A.; Afzal, Naveed; Devarajan, Mutharasu; Subramani, Shanmugan

    2016-11-01

    In this work, structural, surface, optical and electrical properties of NiO films were studied at different film thicknesses. The NiO films of different thicknesses in the range 330-920 nm were prepared on Si (100) and glass substrates by using radiofrequency magnetron sputtering of NiO target at 100 °C. The structural study through XRD indicated polycrystalline NiO films with preferred orientation along (200) plane. The crystalline quality of the films was improved with increase of the film thickness on both substrates, however, the films prepared on Si (100) displayed better crystallinity as compared to the films prepared on the glass. The morphological features of the film as studied through FE-SEM displayed an increase of grain size with increase of its thickness, however, the grain size of the film on Si (100) was found to be slightly larger than that of the glass. The band gap of NiO film was decreased with increase of the film thickness on both the substrates. The films grown on Si (100) exhibited superior electrical properties as compared to the films prepared on glass at all film thicknesses.

  10. Spin Seebeck effect through antiferromagnetic NiO

    NASA Astrophysics Data System (ADS)

    Prakash, Arati; Brangham, Jack; Yang, Fengyuan; Heremans, Joseph P.

    2016-07-01

    We report temperature-dependent spin Seebeck measurements on Pt/YIG bilayers and Pt/NiO/YIG trilayers, where YIG (yttrium iron garnet, Y3F e5O12 ) is an insulating ferrimagnet and NiO is an antiferromagnet at low temperatures. The thickness of the NiO layer is varied from 0 to 10 nm. In the Pt/YIG bilayers, the temperature gradient applied to the YIG stimulates dynamic spin injection into the Pt, which generates an inverse spin Hall voltage in the Pt. The presence of a NiO layer dampens the spin injection exponentially with a decay length of 2 ± 0.6 nm at 180 K. The decay length increases with temperature and shows a maximum of 5.5 ± 0.8 nm at 360 K. The temperature dependence of the amplitude of the spin Seebeck signal without NiO shows a broad maximum of 6.5 ± 0.5 μV/K at 20 K. In the presence of NiO, the maximum shifts sharply to higher temperatures, likely correlated to the increase in decay length. This implies that NiO is most transparent to magnon propagation near the paramagnet-antiferromagnet transition. We do not see the enhancement in spin current driven into Pt reported in other papers when 1-2 nm NiO layers are sandwiched between Pt and YIG.

  11. Mesoscale assembly of NiO nanosheets into spheres

    SciTech Connect

    Zhang Meng; Yan Guojin; Hou Yonggai; Wang Chunhua

    2009-05-15

    NiO solid/hollow spheres with diameters about 100 nm have been successfully synthesized through thermal decomposition of nickel acetate in ethylene glycol at 200 deg. C. These spheres are composed of nanosheets about 3-5 nm thick. Introducing poly(vinyl pyrrolidone) (PVP) surfactant to reaction system can effectively control the products' morphology. By adjusting the quantity of PVP, we accomplish surface areas-tunable NiO assembled spheres from {approx}70 to {approx}200 m{sup 2} g{sup -1}. Electrochemical tests show that NiO hollow spheres deliver a large discharge capacity of 823 mA h g{sup -1}. Furthermore, these hollow spheres also display a slow capacity-fading rate. A series of contrastive experiments demonstrate that the surface area of NiO assembled spheres has a noticeable influence on their discharge capacity. - Graphical abstract: The mesoscale assembly of NiO nanosheets into spheres have been achieved by a solvothermal method. N{sub 2} adsorption/desorption isotherms show the S{sub BET} of NiO is tunable. NiO spheres show large discharge capacity and slow capacity-fading rate.

  12. Magnetic field effects on the NiO magnon spectra.

    SciTech Connect

    Milano, J.; Grimsditch, M.; Materials Science Division; Centro Atomico Bariloche; CIC Nanogune

    2010-03-15

    The effect of an external magnetic field on the eight antiferromagnetic resonance (AFMR) modes of NiO has been studied experimentally using Brillouin light scattering. The results are reproduced by a model that includes the effects of exchange, dipolar coupling, a small cubic anisotropy, and Zeeman terms. Magnetic fields up to 7 T were applied along several NiO crystalline directions. The agreement between theory and experiment provides additional proof that the model, recently introduced to explain the existence of the AFMR multiplet, is indeed valid. Deviations between simulations and experiments, together with a review of previously published results, indicate that large magnetostrictive effects are present in NiO.

  13. The Evolution of Total Phenolic Compounds and Antioxidant Activities during Ripening of Grapes (Vitis vinifera L., cv. Tempranillo) Grown in Semiarid Region: Effects of Cluster Thinning and Water Deficit

    PubMed Central

    Garrido, Inmaculada; Uriarte, David; Hernández, Marcos; Llerena, José Luis; Valdés, María Esperanza; Espinosa, Francisco

    2016-01-01

    A study was made of how water status (rainfed vs. irrigated) and crop load (no cluster thinning vs. cluster thinning) can together affect the grapes of Vitis vinifera cv. Tempranillo vines growing in a semiarid zone of Extremadura (Spain). The grapes were monitored at different stages of ripening, measuring the peroxidase (POX) and superoxide dismutase (SOD) antioxidant activities and the phenolic content (flavonoids and phenylpropanoids), together with other parameters. The irrigation regime was adjusted to provide 100% of crop evapotranspiration (ETc). The findings confirmed previous results that both thinning and water deficit advance ripening, while irrigation and high crop load (no thinning) lengthen the growth cycle. The SOD activity remained practically constant throughout ripening in the thinned treatments and was always lower than in the unthinned treatments, an aspect which could have been the cause of the observed greater level of lipid peroxidation in the water deficit, thinned treatment. The nonspecific peroxidase activity was very low, especially in the thinned treatments. The effect of thinning was enhanced when combined with water deficit, inducing increases in phenylpropanoids and, above all, flavonoids at the harvest stage of ripening, while leaving the polyphenol oxidase activity (PPO) unaffected. PMID:27869671

  14. The Evolution of Total Phenolic Compounds and Antioxidant Activities during Ripening of Grapes (Vitis vinifera L., cv. Tempranillo) Grown in Semiarid Region: Effects of Cluster Thinning and Water Deficit.

    PubMed

    Garrido, Inmaculada; Uriarte, David; Hernández, Marcos; Llerena, José Luis; Valdés, María Esperanza; Espinosa, Francisco

    2016-11-17

    A study was made of how water status (rainfed vs. irrigated) and crop load (no cluster thinning vs. cluster thinning) can together affect the grapes of Vitis vinifera cv. Tempranillo vines growing in a semiarid zone of Extremadura (Spain). The grapes were monitored at different stages of ripening, measuring the peroxidase (POX) and superoxide dismutase (SOD) antioxidant activities and the phenolic content (flavonoids and phenylpropanoids), together with other parameters. The irrigation regime was adjusted to provide 100% of crop evapotranspiration (ETc). The findings confirmed previous results that both thinning and water deficit advance ripening, while irrigation and high crop load (no thinning) lengthen the growth cycle. The SOD activity remained practically constant throughout ripening in the thinned treatments and was always lower than in the unthinned treatments, an aspect which could have been the cause of the observed greater level of lipid peroxidation in the water deficit, thinned treatment. The nonspecific peroxidase activity was very low, especially in the thinned treatments. The effect of thinning was enhanced when combined with water deficit, inducing increases in phenylpropanoids and, above all, flavonoids at the harvest stage of ripening, while leaving the polyphenol oxidase activity (PPO) unaffected.

  15. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  16. Magnetic interactions in NiO at ultrahigh pressure

    DOE PAGES

    Potapkin, Vasily; Dubrovinsky, Leonid; Sergueev, I.; ...

    2016-05-24

    Here, magnetic properties of NiO have been studied in the multimegabar pressure range by nuclear forward scattering of synchrotron radiation using the 67.4 keV M ssbauer transition of 61Ni. The observed magnetic hyperfine splitting confirms the antiferromagnetic state of NiO up to 280 GPa, the highest pressure where magnetism has been observed so far, in any material. Remarkably, the hyperfine field increases from 8.47 T at ambient pressure to ~24 T at the highest pressure, ruling out the possibility of a magnetic collapse. A joint x-ray diffraction and extended x-ray-absorption fine structure investigation reveals that NiO remains in a distortedmore » sodium chloride structure in the entire studied pressure range. Ab initio calculations support the experimental observations, and further indicate a complete absence of Mott transition in NiO up to at least 280 GPa.« less

  17. Magnetic interactions in NiO at ultrahigh pressure

    SciTech Connect

    Potapkin, Vasily; Dubrovinsky, Leonid; Sergueev, I.; Ekholm, M.; Kantor, Innokenty; Bessas, D.; Bykova, E.; Prakapenka, V.; Hermann, Raphael P.; Rueffer, Rudolf; Cerantola, V.; Jonsson, H. J. M.; Olovsson, W.; Mankovsky, S.; Ebert, H.; Abrikosov, I. A.

    2016-05-24

    Here, magnetic properties of NiO have been studied in the multimegabar pressure range by nuclear forward scattering of synchrotron radiation using the 67.4 keV M ssbauer transition of 61Ni. The observed magnetic hyperfine splitting confirms the antiferromagnetic state of NiO up to 280 GPa, the highest pressure where magnetism has been observed so far, in any material. Remarkably, the hyperfine field increases from 8.47 T at ambient pressure to ~24 T at the highest pressure, ruling out the possibility of a magnetic collapse. A joint x-ray diffraction and extended x-ray-absorption fine structure investigation reveals that NiO remains in a distorted sodium chloride structure in the entire studied pressure range. Ab initio calculations support the experimental observations, and further indicate a complete absence of Mott transition in NiO up to at least 280 GPa.

  18. Room temperature ferromagnetic properties of epitaxial (111) Y0.225Sr0.775CoO3-δ thin film grown on single crystalline (111) MgO substrate

    NASA Astrophysics Data System (ADS)

    Seo, Jeongdae; Ahn, Yoonho; Yeog Son, Jong

    2015-08-01

    Epitaxial (111) Y0.225Sr0.775CoO3-δ (YSCO) thin films were deposited on single crystalline (111) MgO substrates by a pulsed laser deposition method. The YSCO thin film exhibited room temperature ferromagnetism with a remanent magnetization of 1.5×10-5 emu. The magnetic force microscopy (MFM) study revealed that the YSCO thin film had a mosaic MFM domain structure. The comparison of domain wall energy for the YSCO and PZT indicates that the large domain wall energy induce the large domain size, though the large magnetization value reduce the magnetic domain size in the case of Co. According to the optical conductivity analysis by spectroscopic ellipsometry, it is inferred that the transition from the intermediate spin state to the high spin state of the YSCO thin film is attributed to the ferromagnetism of the Co4+ ion.

  19. Comment on: "Characterization of Microroughness Parameters in Titanium Nitride Thin Films Grown by DC Magnetron Sputtering" [J Fusion Energ DOI 10.1007/s10894-012-9510-z

    NASA Astrophysics Data System (ADS)

    Solaymani, Shahram; Ghaderi, Atefeh; Nezafat, Negin Beryani

    2012-12-01

    In recent article [Ali Gelali. Azin Ahmadpourian. Reza Bavadi. M. R. Hantehzadeh. Arman Ahmadpourian. J Fusion Energ DOI 10.1007/s10894-012-9510-z], Ali Geleli et al. studied the PSD and RMS Roughness parameters in Titanium Nitride thin films by AFM data and used the computed fractal dimension value of micrographs to describe the surface morphology of thin films. Here, the correct form of equations and relationship between PSD and RMS will be discussed.

  20. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. NiO Test Specimens for Analytical Electron Microscopy: Round-Robin Results

    NASA Astrophysics Data System (ADS)

    Bennett, J. C.; Egerton, R. F.

    1995-08-01

    Improvements in instrumentation for energy-dispersive X-ray microanalysis (EDX) and electron energy-loss spectroscopy (EELS) have underlined the need for suitable standards for measuring performance. We report the results from several laboratories that were supplied with a test specimen consisting of a thin film of nickel oxide supported on a molybdenum grid. The Ni-K[alpha]/Mo-K[alpha] count ratio was used as an indication of number of stray electrons and/or X-rays in the TEM column; the Ni-K[alpha] peak/background ratio provided a measure of the total background in the EDX spectrum, including bremsstrahlung contributions and the effect of detector electronics. By providing values typical of current instrumentation, the results illustrate how the test specimen can be used to evaluate TEM/EDX systems prior to purchase, during installation, and (periodically) during operation. The NiO films were also used to test EELS acquisition and quantification procedures: measured Ni/O elemental ratios were all within 10% of stoichiometry.

  2. Investigation of YBa2Cu3O7-δ growth mode effect on the dielectric properties of BaxSr1-xTiO3 for BaxSr1-xTiO3/YBa2Cu3O7-δ bilayered thin films epitaxially grown on vicinal LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Zhu, X. H.; Peng, W.; Tian, H. F.; Yong, L. P.; Li, J.; Li, J. Q.; Zheng, D. N.

    2006-10-01

    Epitaxial bilayered thin films of BaxSr1-xTiO3 (BSTO, x = 0.1 and 0.5)/YBa2Cu3O7-δ (YBCO), with different YBCO film thicknesses, have been grown in situ by pulsed-laser deposition on 1.2° vicinal LaAlO3 substrates. The critical thickness for the transformation of the growth mode in YBCO between two-dimensional (2D) step flow and three-dimensional island is experimentally confirmed to be around 180 nm. As the YBCO-film thickness increases from 145 to 250 nm, the tremendous degradation of the film quality, due to the growth-mode change in YBCO, leads to drastic deterioration in the dielectric properties of BSTO thin films, with severe decrease in the figure of merit factor from 148 to 10 in Ba0.1Sr0.9TiO3/YBCO (at 77 K and 100 kHz) and from 56 to 6 in Ba0.5Sr0.5TiO3/YBCO (at 300 K and 100 kHz). As a result, the dielectric properties of BSTO thin films could be significantly enhanced by strictly tailoring the growth mode in YBCO as a 2D step flow for this kind of BSTO/YBCO bilayers.

  3. NiO as a peculiar support for metal nanoparticles in polyols oxidation

    SciTech Connect

    Villa, Alberto; Veith, Gabriel M; Ferri, Davide; Weidenkaff, Anke; Perry, Kelly A; Campisi, Sebastiano; Prati, Laura

    2013-01-01

    The peculiar influence of a NiO support was studied by preparing gold catalysts supported on NiO(1-x) TiO2(x) mixed oxides. PVA protected Au nanoparticles showed high activity when supported on NiO for the selective oxidation of glycerol and ethan-1,2-diol. A detailed characterization of the resulting Au catalysts revealed a preferential deposition of the metal nanoparticles on the NiO phase. However, the activity of Au on NiO(1-x)-TiO2(x) decreased with respect to pure NiO and the selectivity evolved with changes to the support.

  4. Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2

    NASA Astrophysics Data System (ADS)

    Kumagai, Hiroshi; Toyoda, Koichi; Matsumoto, Masahiko; Obara, Minoru

    1993-12-01

    We compared the use of nitrous oxide (N2O) and hydrogen peroxide (H2O2) as the oxidant in digital chemical vapor deposition to obtain high-quality optical crystalline thin films of Al2O3. Optical constants and thicknesses of these films were investigated in terms of growth temperature, by using variable-angle spectroscopic ellipsometry.

  5. Magnetic skin layer of NiO(100) probed by polarization-dependent spectromicroscopy

    SciTech Connect

    Mandal, Suman Menon, Krishnakumar S. R.; Maccherozzi, Francesco

    2014-06-16

    Using polarization-dependent x-ray photoemission electron microscopy, we have investigated the surface effects on antiferromagnetic (AFM) domain formation. Depth-resolved information obtained from our study indicates the presence of strain-induced surface AFM domains on some of the cleaved NiO(100) crystals, which are unusually thinner than bulk AFM domain wall widths (∼150 nm). Existence of such magnetic skin layer is substantiated by exchange-coupled ferromagnetic Fe domains in Fe/NiO(100), thereby evidencing the influence of this surface AFM domains on interfacial magnetic coupling. Our observations demonstrate a depth evolution of AFM structure in presence of induced surface strain, while the surface symmetry-breaking in absence of induced strain does not modify the bulk AFM domain structure. Realization of such thin surface AFM layer will provide better microscopic understanding of the exchange bias phenomena.

  6. Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

    SciTech Connect

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, A.

    2015-08-15

    We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO) band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μ{sub B}/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (T{sub C}) around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR) studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high T{sub C} and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

  7. Electrical behaviors of c-axis textured 0.975Bi0.5Na0.5TiO3-0.025BiCoO3 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Guo, Feifei; Yang, Bin; Zhang, Shantao; Liu, Danqing; Wu, Fengmin; Wang, Dali; Cao, Wenwu

    2013-10-01

    The thin films of 0.975Bi0.5Na0.5TiO3-0.025BiCoO3 (BNT-BC) have been successfully deposited on (1 1 1) Pt/Ti/SiO2/Si (1 0 0) substrates by pulse laser deposition and their ferroelectric, dielectric, local piezoelectric properties and temperature dependent leakage current behaviors have been investigated systematically. X-ray diffraction indicates the films are single phased and c-axis oriented. The thin films exhibit ferroelectric polarization-electric field (P-E) hysteresis loop with a remnant polarization (Pr) of 10.0 μC/cm2 and an excellent fatigue resistance property up to 5 × 109 switching cycles. The dielectric constant and dielectric loss are 500 and 0.22 at 1 kHz, respectively. The tunability of the dielectric constant is about 12% at 20 kV/mm. The piezo-phase response hysteresis loop and piezo-amplitude response butterfly curve are observed by switching spectroscopy mode of piezoelectric force microscope (SS-PFM) and the piezoelectric coefficient d33 is about 19-63 pm/V, which is comparable to other reports. The dominant leakage current conduction mechanisms are ohmic conduction at low electric field and Schottky emission at high electric field, respectively. Our results may be helpful for further work on BNT-based thin films with improved electric properties.

  8. Giant magnetoelectric coefficient of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 thin film grown on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal assisted by metglas

    NASA Astrophysics Data System (ADS)

    Zhou, Peng; Yang, Chao; Li, Junyu; Liu, Xiangli; Mei, Zhiheng; Ye, Ang; Liang, Kun; Ma, Zhijun; Qi, Yajun; Yang, Xiaofei; Zhang, Tianjin

    2017-02-01

    Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 heterostructures grown on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single-crystal substrates with (001), (110), and (111) crystallographic orientations were fabricated. Their structural and ferroelectric properties were studied in detail, and their magnetoelectric properties assisted by metglas were also investigated. The results show that the maximum magnetoelectric coefficient of 17 V/(cm·Oe) can be achieved at a very low dc bias magnetic field of 14 Oe for the (001)-oriented heterostructure, which is related to the magnetic-mechanical-electric interaction between the magnetic and ferroelectric phases. This work provides a new route for realizing an extremely high magnetoelectric coefficient in a thin-film heterostructure at a low dc bias magnetic field.

  9. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-05-15

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

  10. Effect of postdeposition annealing on the electrical properties of β-Ga{sub 2}O{sub 3} thin films grown on p-Si by plasma-enhanced atomic layer deposition

    SciTech Connect

    Altuntas, Halit; Donmez, Inci; Ozgit-Akgun, Cagla; Biyikli, Necmi

    2014-07-01

    Ga{sub 2}O{sub 3} dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga{sub 2}O{sub 3} thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900 °C for 30 min under N{sub 2} ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga{sub 2}O{sub 3} thin films were then investigated by fabricating and characterizing Al/β-Ga{sub 2}O{sub 3}/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Q{sub eff}) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6 × 10{sup 12}, 1.9 × 10{sup 12}, and 2.5 × 10{sup 12} cm{sup −2} for samples annealed at 700, 800, and 900 °C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO{sub 2} layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900 °C, and by the Frenkel–Poole emission model for film annealed at 800 °C. Leakage current density was found to improve with annealing temperature. β-Ga{sub 2}O{sub 3} thin film annealed at 800 °C exhibited the highest reverse breakdown field value.

  11. The influence of strain on the dielectric behavior of (Ba, Sr) Ti{sub 1+x}O{sub 3} thin films grown by LS-MOCVD on Pt/SiO{sub 2}/Si.

    SciTech Connect

    Streiffer, S. K.

    1998-10-14

    The strain state and its coupling to dielectric behavior have been investigated for (100) BST thin films deposited on Pt/SiO{sub 2}/Si at 640 C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.

  12. Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

    NASA Astrophysics Data System (ADS)

    Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

    2016-12-01

    Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  13. The interfacial and surface properties of thin Fe and Gd films grown on W(110) as studied by scanning tunneling microscopy, site-resolved photoelectron diffraction, and spin polarized photoelectron diffraction

    SciTech Connect

    Tober, Eric D.

    1997-06-01

    Combined scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) measurements from Gd films grown on W(110) prepared with and without annealing have been used to provide a detailed picture of the growth of such films, permitting a quantitative structural explanation for previously-measured magnetic properties and the identification of a new two-dimensional structure for the first monolayer. The analysis of the film roughness of room-temperature-grown films as a function of coverage and lateral length scale reveals that the growing Gd surface follows scaling laws for a self-affine surface. Annealing these as-deposited films at elevated temperatures is found to drastically alter the morphology of the films, as seen by both STM and LEED. Nanometer-scale islands of relatively well-defined size and shape are observed under certain conditions. Finally, the first monolayer of Gd is observed to form a (7x14) superstructure with pseudo-(7x7) symmetry that is consistent with a minimally-distorted hexagonal two-dimensional Gd(0001) film. Furthermore, a new beamline and photoelectron spectrometer/diffractometer at the Advanced Light Source have been used to obtain full-solid-angle and site-specific photoelectron diffraction (PD) data from interface W atoms just beneath (1x1) Fe and (7x14) Gd monolayers on W(110) by utilizing the core level shift in the W 4f7/2 spectrum. A comparison of experiment with multiple scattering calculations permits determining the Fe adsorption site and the relative interlayer spacing to the first and second W layers. These Fe results are also compared to those from the very different Gd overlayer and from the clean W(110) surface. Such interface PD measurements show considerable promise for future studies. Finally, the rare-earth ferromagnetic system of Gd(0001) has been examined through the use of spin polarized photoelectron diffraction from the Gd 4s and 5s photoelectron multiplets.

  14. Ferroelectric dielectric properties of Ba{sub 0.5}Sr{sub 0.5}(Ti{sub 0.80}Sn{sub 0.20})O{sub 3} thin films grown by the soft chemical method

    SciTech Connect

    Souza, I.A.; Cavalcante, L.S.; Cilense, M.

    2006-10-15

    Polycrystalline Ba{sub 0.5}Sr{sub 0.5}(Ti{sub 0.80}Sn{sub 0.20})O{sub 3} (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniforain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14{mu}C/cm{sup 2} and coercive field of 74kV/cm at frequency of 1MHz. At the same frequency, the leakage current density at 1.0V is equal to 1.5x10{sup -7}A/cm{sup 2}. This work clearly reveals the highly promising potential of BST:Sn for application in memory devices.

  15. Electrical and optical properties of copper and nickel molecular materials with tetrabenzo [b,f,j,n] [1,5,9,13] tetraazacyclohexadecine thin films grown by the vacuum thermal evaporation technique.

    PubMed

    Rodriguez, A; Sánchez-Vergara, M E; García-Montalvo, V; Ortiz-Rebollo, A; Alvarez-Bada, J R; Alvarez-Toledano, C

    2010-01-01

    Semiconducting molecular-material thin-films of tetrabenzo (b,f,j,n) [1,5,9,13] tetraazacyclohexadecine copper(II) and nickel(II) bisanthraflavates have been prepared by using vacuum thermal evaporation on Corning glass substrates and crystalline silicon wafers. The films thus obtained were characterized by infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) spectroscopy and ellipsometry. IR spectroscopy showed that the molecular-material thin-films exhibit the same intra-molecular bonds as the original compounds, which suggests that the thermal evaporation process does not significantly alter their bonds. The optical band-gap values calculated from the absorption coefficient may be related to non-direct electronic interband transitions. The effect of temperature on conductivity was also measured in these samples. It was found that the temperature-dependent electric current is always higher for the nickel-based material and suggests a semiconductor-like behavior with conductivities in the order of 10(-8)Omega(-1)cm(-1).

  16. Nickel oxide thin film from electrodeposited nickel sulfide thin film: peroxide sensing and photo-decomposition of phenol.

    PubMed

    Jana, Sumanta; Samai, Subhasis; Mitra, Bibhas C; Bera, Pulakesh; Mondal, Anup

    2014-09-14

    A novel non-enzymatic peroxide sensor has been constructed by using nickel oxide (NiO) thin films as sensing material, which were prepared by a two-step process: (i) electrodeposition of nickel sulfide (NiS) and (ii) thermal air oxidation of as-deposited NiS to NiO. The resultant material is highly porous and comprises interconnected nanofibers. UV-Vis spectroscopy, FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used for a complete characterization of nanostructured NiO thin films. Cyclic voltammetry study shows that NiO/ITO electrode facilitates the oxidation of hydrogen peroxide and exhibits excellent catalytic activity towards its sensing. The amperometric study of NiO/ITO was carried out to determine the sensitivity, linear range, detection limit of the proposed sensor. The sensor exhibits prominent electrocatalytic activity toward the oxidation of H2O2 with a wide linear range and a low detection limit. The possible use of the synthesized NiO thin films as an effective photocatalyst for the decomposition of phenol is also discussed.

  17. Self-organization processes in highly epitaxial La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films grown on SrTiO{sub 3} (001) substrates

    SciTech Connect

    Konstantinovic, Z.; Balcells, Ll.; Martinez, B.; Santiso, J.; Colson, D.; Forget, A.

    2009-03-15

    We report on the growth of highly epitaxial La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films on SrTiO{sub 3} (001) oriented substrates by rf magnetron sputtering. It is shown that structural strain caused by lattice mismatch between film and substrate and kinetics growing instabilities may offer unique opportunities to control the film morphologies. By increasing growth rate, the surface morphology undergoes a dramatic transformation: from very smooth surface through arrays of mounds or antidots to hatched morphology. All nano-objects form long-range ordered arrays running in the steps direction defined by the miscut angle of underlying substrate. These self-assembled structures are of high interest envisaging a new route for the fabrication of oxide-based magnetoelectronic devices by using a bottom-up approach.

  18. Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111).

    PubMed

    Zhang, K H L; Lazarov, V K; Veal, T D; Oropeza, F E; McConville, C F; Egdell, R G; Walsh, A

    2011-08-24

    Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm(2) V(-1) s(-1). The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

  19. Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Senba, Shinya; Matsumoto, Naoki; Jomura, Mitsuhiro; Asada, Hironori; Koyanagi, Tsuyoshi; Kishimoto, Kengo; Fukuma, Yasuhiro

    2013-06-01

    We have successfully grown EuS (111) epitaxial films on BaF2 (111) and SrF2 (111) substrates by using molecular beam epitaxy at substrate temperatures ( T S 's) between 100 and 500 °C. Pole figures of X-ray diffraction indicate a high degree of in-plane orientation, and all of the samplesshow very high resistivity. The surface roughness for 10-nm-thick EuS films on BaF2 (111) and SrF2 (111) substrates measured by using atomic force microscopy (AFM) are 0.122 and 0.092 nm, respectively. The Curie temperature of the EuS films increases up to ˜16 K with increasing T S . We also try to manipulate the coercive force, which is an important magnetic property, by Te-doping to achieve an anti-parallel magnetization state between two ferromagnetic layers in spin devices. The obtained coercive force for the Te-doped film (110 Oe) is large compared with that for the undoped one (20 Oe).

  20. BaFe2(As1‑x P x )2 (x = 0.22‑0.42) thin films grown on practical metal–tape substrates and their critical current densities

    NASA Astrophysics Data System (ADS)

    Hiramatsu, Hidenori; Sato, Hikaru; Kamiya, Toshio; Hosono, Hideo

    2017-04-01

    We optimized the substrate temperature (T s) and phosphorus concentration (x) of BaFe2(As1‑x P x )2 films on practical metal–tape substrates for pulsed laser deposition from the viewpoints of crystallinity, superconductor critical temperature (T c), and critical current density (J c). It was found that the optimum T s and x values are 1050 °C and x = 0.28, respectively. The optimized film exhibits {{T}{{c}}}{{onset}}=26.6 and {{T}{{c}}}{{zero}}=22.4 {{K}} along with a high self-field J c at 4 K (∼1 MA cm‑2) and relatively isotropic J c under magnetic fields up to 9 T. Unexpectedly, we found that lower crystallinity samples, which were grown at a higher T s of 1250 °C than the optimized T s = 1050 °C, exhibit higher J c along the ab plane under high magnetic fields than the optimized samples. The presence of horizontal defects that act as strong vortex pinning centers, such as stacking faults, are a possible origin of the high J c values in the poor crystallinity samples.

  1. Methods for making thin layers of crystalline materials

    SciTech Connect

    Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

    2013-07-23

    Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

  2. Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti /SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Parui, Jayanta; Krupanidhi, S. B.

    2006-08-01

    Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt /Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ˜ 17°C per 1mol% of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193kV/cm at 80°C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2mol% La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

  3. L10 ordered phase formation in FePt, FePd, CoPt, and CoPd alloy thin films epitaxially grown on MgO(001) single-crystal substrates

    NASA Astrophysics Data System (ADS)

    Ohtake, Mitsuru; Ouchi, Shouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2012-04-01

    The FePt, FePd, CoPt, and CoPd epitaxial thin films are prepared on MgO(001) single-crystal substrates by ultrahigh vacuum RF magnetron sputtering. The effects of the magnetic material and the substrate temperature on the film growth, the film structure, and the magnetic properties are investigated. The L10 ordered phase formation is observed for FePt, FePd, and CoPt films prepared at temperatures higher than 200, 400, and 600 °C, respectively, whereas that is not recognized for CoPd films. The L10-FePd(001) single-crystal films with the c-axis normal to the substrate surface are formed, whereas the FePt and CoPt epitaxial films include L10(100) crystals whose c-axis is parallel to the substrate surface, in addition to the L10(001) crystals. Upon increasing the substrate temperature, the ordering degree increases. A higher ordering parameter is observed in the order of FePd > FePt > CoPt. The magnetic properties are influenced by the crystal structure, the crystallographic orientation of the L10 crystal, and the ordering degree.

  4. Properties of Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) thin films grown on SrRuO(3) buffered nickel and silicon substrates by chemical solution deposition

    SciTech Connect

    Narayanan, M.; Ma, B.; Tong, S.; Koritala, R.; Balachandran, U.

    2012-01-01

    Ferroelectric film-on-foil capacitors are suitable to replace discrete passive components in the quest to develop electronic devices that show superior performance and are smaller in size. The film-on-foil approach is the most practical method to fabricate such components. Films of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) were deposited on SrRuO{sub 3} (SRO) buffer films over nickel and silicon substrates. High-quality polycrystalline SRO thin-film electrodes were first deposited by chemical solution deposition. A phase pure, dense, uniform microstructure with grain size <100 nm was obtained in films crystallized at 700 C. The room-temperature resistivity of the SRO films crystallized at 700 C was {approx}800-900 {mu}{Omega}-cm. The dielectric properties of sol-gel derived PLZT capacitors on SRO-buffered nickel were evaluated as a function of temperature, bias field, and frequency, and the results were compared to those of the same films on silicon substrates. The comparison demonstrated the integrity of the buffer layer and its compatibility with nickel substrates. Device-quality dielectric properties were measured on PLZT films deposited on SRO-buffered nickel foils and found to be superior to those for PLZT on SRO-buffered silicon and expensive platinized silicon. These results suggest that SRO films can act as an effective barrier layer on nickel substrates suitable for embedded capacitor applications.

  5. Growth of Hierarchal Mesoporous NiO Nanosheets on Carbon Cloth as Binder-free Anodes for High-performance Flexible Lithium-ion Batteries

    PubMed Central

    Long, Hu; Shi, Tielin; Hu, Hao; Jiang, Shulan; Xi, Shuang; Tang, Zirong

    2014-01-01

    Mesoporous NiO nanosheets were directly grown on three-dimensional (3D) carbon cloth substrate, which can be used as binder-free anode for lithium-ion batteries (LIBs). These mesoporous nanosheets were interconnected with each other and forming a network with interval voids, which give rise to large surface area and efficient buffering of the volume change. The integrated hierarchical electrode maintains all the advantageous features of directly building two-dimensional (2D) nanostructues on 3D conductive substrate, such as short diffusion length, strain relaxation and fast electron transport. As the LIB anode, it presents a high reversible capacity of 892.6 mAh g−1 after 120 cycles at a current density of 100 mA g−1 and 758.1 mAh g−1 at a high charging rate of 700 mA g−1 after 150 cycles. As demonstrated in this work, the hierarchical NiO nanosheets/carbon cloth also shows high flexibility, which can be directly used as the anode to build flexible LIBs. The introduced facile and low-cost method to prepare NiO nanosheets on flexible and conductive carbon cloth substrate is promising for the fabrication of high performance energy storage devices, especially for next-generation wearable electronic devices. PMID:25491432

  6. Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO{sub 3}

    SciTech Connect

    Cheng, Xuan; Sullaphen, Jivika; Valanoor, Nagarajan; Weyland, Matthew; Liu, Hongwei

    2014-03-01

    Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO{sub 3}) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO{sub 3} substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L{sub 2,3} peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface. This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

  7. Graphic Grown Up

    ERIC Educational Resources Information Center

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  8. Influence of hole mobility on the response characteristics of p-type nickel oxide thin film based glucose biosensor.

    PubMed

    Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

    2012-05-13

    RF sputtered p-type nickel oxide (NiO) thin film exhibiting tunable semiconductor character which in turns enhanced its functional properties. NiO thin film with high hole mobility is developed as a potential matrix for the realization of glucose biosensor. NiO thin film prepared under the optimized deposition conditions offer good electrical conductivity (1.5×10(-3) Ω(-1)-cm(-1)) with high hole mobility (2.8 cm(2) V(-1) s(-1)). The bioelectrode (GO(x)/NiO/ITO/glass) exhibits a low value of Michaelis-Menten constant (K(m)=1.05 mM), indicating high affinity of the immobilized GO(x) toward the analyte (glucose). Due to the high surface coverage (2.32×10(-7) mol cm(-2)) of the immobilized enzyme on to the NiO matrix and its high electrocatalytic activity, the prepared biosensor exhibits a high sensitivity of 0.1 mA(mM(-1)-cm(-2)) and a good linearity from 25 to 300 mg dL(-1) of glucose concentration with fast response time of 5 s. Various functional properties of the material (mobility, crystallinity and stress) are found to influence the charge communication feature of NiO thin film matrix to a great extent, resulting in enhanced sensing response characteristics.

  9. Photoacoustic determination of thermal and electron transport properties of single crystal NiO

    NASA Astrophysics Data System (ADS)

    Nikolic, P. M.; Lukovic, D.; Savic, S.; Vasiljevic Radovic, D.; Radulovic, K.; Vujatovic, S.; Lukic, L.; Nikolic, M. V.; Bojicic, A.; Djuric, S.

    2005-06-01

    Thermal and electron transport properties of single crystal NiO were determined using the photoacoustic technique. NiO single crystals were prepared using the Verneuil method and were easily cleaved parallel to the (100) plane. All samples were of the p type. Atomic force microscopy images of cleaved NiO samples were made enabling a view of steps along the (001) direction and terraces, which were between 20 nm and 100 nm thick.

  10. Femtosecond excitonic relaxation dynamics of perovskite on mesoporous films of Al₂O₃ and NiO nanoparticles.

    PubMed

    Hsu, Hung-Yu; Wang, Chi-Yung; Fathi, Amir; Shiu, Jia-Wei; Chung, Chih-Chun; Shen, Po-Shen; Guo, Tzung-Fang; Chen, Peter; Lee, Yuan-Pern; Diau, Eric Wei-Guang

    2014-08-25

    The excitonic relaxation dynamics of perovskite adsorbed on mesoporous thin films of Al2O3 and NiO upon excitation at 450 nm were investigated with femtosecond optical gating of photoluminescence (PL) via up-conversion. The temporal profiles of emission observed in spectral region 670-810 nm were described satisfactorily with a composite consecutive kinetic model and three transient components representing one hot and two cold excitonic relaxations. All observed relaxation dynamics depend on the emission wavelength, showing a systematic time-amplitude correlation for all three components. When the NiO film was employed, we observed an extent of relaxation proceeding through the non-emissive surface state larger than through the direct electronic relaxation channel, which quenches the PL intensity more effectively than on the Al2O3 film. We conclude that perovskite is an effective hole carrier in a p-type electrode for NiO-based perovskite solar cells showing great performance.

  11. Novel combustion method to prepare octahedral NiO nanoparticles and its photocatalytic activity

    SciTech Connect

    Jegatha Christy, A.; Umadevi, M.

    2013-10-15

    Graphical abstract: - Highlights: • NiO nanoparticles were synthesized by solution combustion method. • Prepared NiO nanoparticles are fcc structure. • Synthesized NiO nanoparticles are octahedral shape. • Shows good photocatalytic activity. - Abstract: Nickel oxide nanoparticles (NiO NPs) were synthesized by solution combustion method using glycine and citric acid as fuels. The X-ray diffraction (XRD) result confirms the face centered cubic (fcc) structure of NiO. The octahedral shape of NiO NPs was confirmed by field emission scanning electron microscope (FESEM) and high resolution transmission electron microscopy (HRTEM). It is possible to suggest that the organic fuel (citric acid/glycine) is responsible for the formation of the octahedral shape due to the easier complex formation. Photocatalytic activity of NiO NPs also evaluated and found that the prepared NiO NPs have high photocatalytic degradation. In the present study, the crystalline nature and shape of the NiO nanoparticles plays a vital role in determining the photocatalytic activity.

  12. Facile approach to prepare hollow core–shell NiO microspherers for supercapacitor electrodes

    SciTech Connect

    Han, Dandan; Xu, Pengcheng; Jing, Xiaoyan; Wang, Jun; Song, Dalei; Liu, Jingyuan; Zhang, Milin

    2013-07-15

    A facile lamellar template method (see image) has been developed for the preparation of uniform hollow core–shell structure NiO (HCS–NiO) with a nanoarchitectured wall structure. The prepared NiO was found to be highly crystalline in uniform microstructures with high specific surface area and pore volume. The results indicated that ethanol interacted with trisodium citrate played an important role for the formation of hollow core–shell spheres. On the basis of the analysis of the composition and the morphology, a possible formation mechanism was investigated. NiO microspheres with hollow core–shell showed excellent capacitive properties. The exceptional cyclic, structural and electrochemical stability with ∼95% coulombic efficiency, and very low ESR value from impedance measurements promised good utility value of hollow core–shell NiO material in fabricating a wide range of high-performance electrochemical supercapacitors. - The hollow core–shell NiO was prepared with a facile lamellar template method. The prepared NiO show higher capacitance, lower ion diffusion resistance and better electroactive surface utilization for Faradaic reactions. - Highlights: • Formation of hollow core–shell NiO via a novel and facile precipitation route. • Exhibited uniform feature sizes and high surface area of hollow core–shell NiO. • Synthesized NiO has high specific capacitance ( 448 F g{sup 1}) and very low ESR value. • Increased 20% of long life cycles capability after 500 charge–discharge cycles.

  13. Impact of Nanosize on Supercapacitance: Study of 1D Nanorods and 2D Thin-Films of Nickel Oxide.

    PubMed

    Patil, Ranjit A; Chang, Cheng-Ping; Devan, Rupesh S; Liou, Yung; Ma, Yuan-Ron

    2016-04-20

    We synthesized unique one-dimensional (1D) nanorods and two-dimensional (2D) thin-films of NiO on indium-tin-oxide thin-films using a hot-filament metal-oxide vapor deposition technique. The 1D nanorods have an average width and length of ∼100 and ∼500 nm, respectively, and the densely packed 2D thin-films have an average thickness of ∼500 nm. The 1D nanorods perform as parallel units for charge storing. However, the 2D thin-films act as one single unit for charge storing. The 2D thin-films possess a high specific capacitance of ∼746 F/g compared to 1D nanorods (∼230 F/g) using galvanostatic charge-discharge measurements at a current density of 3 A/g. Because the 1D NiO nanorods provide more plentiful surface areas than those of the 2D thin-films, they are fully active at the first few cycles. However, the capacitance retention of the 1D nanorods decays faster than that of the 2D thin-films. Also, the 1D NiO nanorods suffer from instability due to the fast electrochemical dissolution and high nanocontact resistance. Electrochemical impedance spectroscopy verifies that the low dimensionality of the 1D NiO nanorods induces the unavoidable effects that lead them to have poor supercapacitive performances. On the other hand, the slow electrochemical dissolution and small contact resistance in the 2D NiO thin-films favor to achieve high specific capacitance and great stability.

  14. Hierarchically porous nickel oxide nanosheets grown on nickel foam prepared by one-step in situ anodization for high-performance supercapacitors.

    PubMed

    Yang, Li; Qian, Lei; Tian, Xianqing; Li, Jing; Dai, Jianyuan; Guo, Yong; Xiao, Dan

    2014-06-01

    Porous NiO nanosheets are successfully grown on nickel foam substrate through an in situ anodization by using molten KOH as the electrolyte. High-purity NiO is directly obtained by this one-step method without any subsequent treatment. The obtained NiO supported on nickel foam is used as a binder-free electrode for a supercapacitor and its pseudocapacitive behavior has been investigated by cyclic voltammetry and galvanostatic charge-discharge tests in a 6 M aqueous solution of KOH. Electrochemical data demonstrates that this binder-free electrode possesses ultrahigh capacitance (4.74 F cm(-2) at 4 mA cm(-2)), excellent rate capability, and cycling stability. After 1000 cycles, the areal capacitance value is 9.4 % lower than the initial value and maintains 85.4 % of the maximum capacitance value.

  15. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  16. Semi-analytical modeling of the NIO1 source

    SciTech Connect

    Cazzador, M.; Cavenago, M.; Serianni, G.; Veltri, P.

    2015-04-08

    NIO1 is a compact and versatile negative ion source, with a total current of 130 mA accelerated to 60 keV. Negative ions are created inside the plasma, which is inductively coupled to an external rf cylindrical coil operating in the range of 2 ± 0.2 MHz. The plasma is confined in the source chamber (a 50 mm radius cylinder) by a multipole magnetic field and the ions are extracted through a 3x3 matrix of apertures. The use of cesium, to enhance the negative ion production by H{sub 0} bombardment of the surfaces, is foreseen in a second stage of the operation, so that at present time the source is operating in pure volume configuration. This paper presents a model aimed to describe the main physical phenomena occurring in the source, focusing on the rf coupling with the plasma and the evolution of plasma parameters in the source. With respect to more sophisticated models of negative ion sources here we aimed to develop a fast tool capable of qualitatively describing the response of the system to variations in the basic operating parameters. The findings of this models is finally compared with the first experimental results of NIO1.

  17. Custom instruction set NIOS-based OFDM processor for FPGAs

    NASA Astrophysics Data System (ADS)

    Meyer-Bäse, Uwe; Sunkara, Divya; Castillo, Encarnacion; Garcia, Antonio

    2006-05-01

    Orthogonal Frequency division multiplexing (OFDM) spread spectrum technique, sometimes also called multi-carrier or discrete multi-tone modulation, are used in bandwidth-efficient communication systems in the presence of channel distortion. The benefits of OFDM are high spectral efficiency, resiliency to RF interference, and lower multi-path distortion. OFDM is the basis for the European digital audio broadcasting (DAB) standard, the global asymmetric digital subscriber line (ADSL) standard, in the IEEE 802.11 5.8 GHz band standard, and ongoing development in wireless local area networks. The modulator and demodulator in an OFDM system can be implemented by use of a parallel bank of filters based on the discrete Fourier transform (DFT), in case the number of subchannels is large (e.g. K > 25), the OFDM system are efficiently implemented by use of the fast Fourier transform (FFT) to compute the DFT. We have developed a custom FPGA-based Altera NIOS system to increase the performance, programmability, and low power in mobil wireless systems. The overall gain observed for a 1024-point FFT ranges depending on the multiplier used by the NIOS processor between a factor of 3 and 16. A careful optimization described in the appendix yield a performance gain of up to 77% when compared with our preliminary results.

  18. Effects of Co2+ doping on physicochemical behaviors of hierarchical NiO nanostructure

    NASA Astrophysics Data System (ADS)

    Ding, Caihua; Gao, WenChao; Zhao, Yongjie; Zhao, Yuzhen; Zhou, Heping; Li, Jingbo; Jin, Haibo

    2016-12-01

    A series of Co2+ doped NiO materials (Ni1-xCoxO with x = 0, 0.125, 0.25 and 0.5) were synthesized using a facile hydrothermal method followed by a calcination process. The effects of Co2+ doping on the structural, morphological, magnetic and catalytic properties of NiO were systematically investigated. The results indicated that Co2+ doping would bring about a series influence to the as-obtained NiO product. The XRD results indicated that within the region of 0 ≤ x ≤ 0.25 the doped products revealed a pure NiO phase. The elementary unit for the hierarchy NiO gradually transformed from nanosheets to nanoneedles with the increase of Co2+ doping content. As-obtained Co2+ doped NiO products showed ferromagnetism at room temperature and the magnetization value was increased with the increase of Co2+ doping content. The catalytic properties of NiO concerning the thermal decomposition of ammonium perchlorate (AP) were significantly improved via the introduction of Co2+. The Ni1-xCoxO products with x = 0.25 showed the best catalytic performance to AP, which could decrease the beginning and ending decomposition temperature of AP by 44 and 108 °C. The change of morphology, enhancement of electrical conductivity and the synergistic effect between Co2+ and NiO were the main factors responsible for the improvement of physicochemical behaviors.

  19. Effect of Cu doping on the resistive switching of NiO thin films

    SciTech Connect

    Li, Jian-Chang Hou, Xue-Yan; Cao, Qing

    2014-04-28

    Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.

  20. Flower-like NiO structures: Controlled hydrothermal synthesis and electrochemical characteristic

    SciTech Connect

    Chai, Hui; Chen, Xuan; Jia, Dianzeng; Bao, Shujuan; Zhou, Wanyong

    2012-12-15

    Graphical abstract: Flower-like porous NiO was obtained via thermal decomposition of the precursor prepared by a hydrothermal process using hexamethylenetetramine and polyethylene glycol as hydrolysis-controlling agent and surfactant, respectively. The morphology and microstructure of as-synthesized NiO were characterized by X-ray diffraction (XRD), Brunauer–Emmett–Teller (BET), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results of electrochemical measurements demonstrated that the flower-like porous NiO has high capacity (340 F g{sup −1}) with excellent cycling performance as electrode materials of electrochemical capacitors (ECs), which may be attributed to the unique microstrcture of NiO. Data analyses indicated that NiO with novel porous structure attractive for practical and large-scale applications in electrochemical capacitors. Display Omitted Highlights: ► Synthesis and characterization of NiO with novel porous structure is presented in this work. ► The electrochemical performance of product was examined. ► NiO with excellent performance as electrode materials may be due to the unique microstrcture. ► NiO with novel porous structure attractive for practical with high capacity (340 F g{sup −1}). -- Abstract: Flower-like porous NiO was obtained by thermal decomposition of the precursor prepared by a hydrothermal process with hexamethylenetetramine and polyethylene glycol as hydrolysis-controlling agent and surfactant, respectively. The morphology and microstructure of as-synthesized NiO were characterized by X-ray diffraction (XRD), Brunauer–Emmett–Teller (BET), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The resulting structures of NiO exhibited porous like petal building blocks. The electrochemical measurements’ results demonstrated that flower-like porous NiO has high capacity (340 F g{sup −1}) with excellent cycling performance as electrode materials for