Sample records for hafnium carbides

  1. The Hot-Pressing of Hafnium Carbide (Melting Point, 7030 F)

    NASA Technical Reports Server (NTRS)

    Sanders, William A.; Grisaffe, Salvatore J.

    1960-01-01

    An investigation was undertaken to determine the effects of the hot-pressing variables (temperature, pressure, and time) on the density and grain size of hafnium carbide disks. The purpose was to provide information necessary for the production of high-density test shapes for the determination of physical and mechanical properties. Hot-pressing of -325 mesh hafnium carbide powder was accomplished with a hydraulic press and an inductively heated graphite die assembly. The ranges investigated for each variable were as follows: temperature, 3500 to 4870 F; pressure, 1000 to 6030 pounds per square inch; and time, 5 to 60 minutes. Hafnium carbide bodies of approximately 98 percent theoretical density can be produced under the following minimal conditions: 4230 F, 3500 pounds per square inch, and 15 minutes. Further increases in temperature and time resulted only in greater grain size.

  2. Tensile and stress-rupture behavior of hafnium carbide dispersed molybdenum and tungsten base alloy wires

    NASA Technical Reports Server (NTRS)

    Yun, Hee Mann; Titran, Robert H.

    1993-01-01

    The tensile strain rate sensitivity and the stress-rupture strength of Mo-base and W-base alloy wires, 380 microns in diameter, were determined over the temperature range from 1200 K to 1600 K. Three molybdenum alloy wires; Mo + 1.1w/o hafnium carbide (MoHfC), Mo + 25w/o W + 1.1w/o hafnium carbide (MoHfC+25W) and Mo + 45w/o W + 1.1w/o hafnium carbide (MoHfC+45W), and a W + 0.4w/o hafnium carbide (WHfC) tungsten alloy wire were evaluated. The tensile strength of all wires studied was found to have a positive strain rate sensitivity. The strain rate dependency increased with increasing temperature and is associated with grain broadening of the initial fibrous structures. The hafnium carbide dispersed W-base and Mo-base alloys have superior tensile and stress-rupture properties than those without HfC. On a density compensated basis the MoHfC wires exhibit superior tensile and stress-rupture strengths to the WHfC wires up to approximately 1400 K. Addition of tungsten in the Mo-alloy wires was found to increase the long-term stress rupture strength at temperatures above 1400 K. Theoretical calculations indicate that the strength and ductility advantage of the HfC dispersed alloy wires is due to the resistance to recrystallization imparted by the dispersoid.

  3. Processing and characterization of boron carbide-hafnium diboride ceramics

    NASA Astrophysics Data System (ADS)

    Brown-Shaklee, Harlan James

    Hafnium diboride based ceramics are promising candidate materials for advanced aerospace and nuclear reactor components. The effectiveness of boron carbide and carbon as HfB2 sintering additives was systematically evaluated. In the first stage of the research, boron carbide and carbon additives were found to improve the densification behavior of milled HfB2 powder in part by removing oxides at the HfB2 surface during processing. Boron carbide additives reduced the hot pressing temperature of HfB2 by 150°C compared to carbon, which reduced the hot pressing temperature by ˜50°C. Reduction of oxide impurities alone could not explain the difference in sintering enhancement, however, and other mechanisms of enhancement were evaluated. Boron carbides throughout the homogeneity range were characterized to understand other mechanisms of sintering enhancement in HfB2. Heavily faulted carbon rich and boron rich boron carbides were synthesized for addition to HfB2. The greatest enhancement to densification was observed in samples containing boron- and carbon-rich compositions whereas B6.5 C provided the least enhancement to densification. It is proposed that carbon rich and boron rich boron carbides create boron and hafnium point defects in HfB2, respectively, which facilitate densification. Evaluation of the thermal conductivity (kth) between room temperature and 2000°C suggested that the stoichiometry of the boron carbide additives did not significantly affect kth of HfB2-BxC composites. The improved sinterability and the high kth (˜110 W/m-K at 300K and ˜90 W/m-K at 1000°C ) of HfB2-BxC ceramics make them excellent candidates for isotopically enriched reactor control materials.

  4. Ablation Resistant Zirconium and Hafnium Ceramics

    NASA Technical Reports Server (NTRS)

    Bull, Jeffrey (Inventor); White, Michael J. (Inventor); Kaufman, Larry (Inventor)

    1998-01-01

    High temperature ablation resistant ceramic composites have been made. These ceramics are composites of zirconium diboride and zirconium carbide with silicon carbide, hafnium diboride and hafnium carbide with silicon carbide and ceramic composites which contain mixed diborides and/or carbides of zirconium and hafnium. along with silicon carbide.

  5. Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

    NASA Astrophysics Data System (ADS)

    Gaballa, Osama Gaballa Bahig

    Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering

  6. Silver-hafnium braze alloy

    DOEpatents

    Stephens, Jr., John J.; Hosking, F. Michael; Yost, Frederick G.

    2003-12-16

    A binary allow braze composition has been prepared and used in a bonded article of ceramic-ceramic and ceramic-metal materials. The braze composition comprises greater than approximately 95 wt % silver, greater than approximately 2 wt % hafnium and less than approximately 4.1 wt % hafnium, and less than approximately 0.2 wt % trace elements. The binary braze alloy is used to join a ceramic material to another ceramic material or a ceramic material, such as alumina, quartz, aluminum nitride, silicon nitride, silicon carbide, and mullite, to a metal material, such as iron-based metals, cobalt-based metals, nickel-based metals, molybdenum-based metals, tungsten-based metals, niobium-based metals, and tantalum-based metals. A hermetic bonded article is obtained with a strength greater than 10,000 psi.

  7. METHOD OF COATING GRAPHITE WITH STABLE METAL CARBIDES AND NITRIDES

    DOEpatents

    Gurinsky, D.H.

    1959-10-27

    A method is presented for forming protective stable nitride and carbide compounds on the surface of graphite. This is accomplished by contacting the graphite surface with a fused heavy liquid metal such as bismuth or leadbismuth containing zirconium, titanium, and hafnium dissolved or finely dispersed therein to form a carbide and nitride of at least one of the dissolved metals on the graphite surface.

  8. Hafnium radioisotope recovery from irradiated tantalum

    DOEpatents

    Taylor, Wayne A.; Jamriska, David J.

    2001-01-01

    Hafnium is recovered from irradiated tantalum by: (a) contacting the irradiated tantalum with at least one acid to obtain a solution of dissolved tantalum; (b) combining an aqueous solution of a calcium compound with the solution of dissolved tantalum to obtain a third combined solution; (c) precipitating hafnium, lanthanide, and insoluble calcium complexes from the third combined solution to obtain a first precipitate; (d) contacting the first precipitate of hafnium, lanthanide and calcium complexes with at least one fluoride ion complexing agent to form a fourth solution; (e) selectively adsorbing lanthanides and calcium from the fourth solution by cationic exchange; (f) separating fluoride ion complexing agent product from hafnium in the fourth solution by adding an aqueous solution of ferric chloride to obtain a second precipitate containing the hafnium and iron; (g) dissolving the second precipitate containing the hafnium and iron in acid to obtain an acid solution of hafnium and iron; (h) selectively adsorbing the iron from the acid solution of hafnium and iron by anionic exchange; (i) drying the ion exchanged hafnium solution to obtain hafnium isotopes. Additionally, if needed to remove residue remaining after the product is dried, dissolution in acid followed by cation exchange, then anion exchange, is performed.

  9. As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert

    2012-06-27

    In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2more » kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.« less

  10. Hafnium isotope stratigraphy of ferromanganese crusts

    PubMed

    Lee; Halliday; Hein; Burton; Christensen; Gunther

    1999-08-13

    A Cenozoic record of hafnium isotopic compositions of central Pacific deep water has been obtained from two ferromanganese crusts. The crusts are separated by more than 3000 kilometers but display similar secular variations. Significant fluctuations in hafnium isotopic composition occurred in the Eocene and Oligocene, possibly related to direct advection from the Indian and Atlantic oceans. Hafnium isotopic compositions have remained approximately uniform for the past 20 million years, probably reflecting increased isolation of the central Pacific. The mechanisms responsible for the increase in (87)Sr/(86)Sr in seawater through the Cenozoic apparently had no effect on central Pacific deep-water hafnium.

  11. SEPARATION OF HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Overholser, L.B.; Barton, C.J. Sr.; Ramsey, J.W.

    1960-05-31

    The separation of hafnium impurities from zirconium can be accomplished by means of organic solvent extraction. The hafnium-containing zirconium feed material is dissolved in an aqueous chloride solution and the resulting solution is contacted with an organic hexone phase, with at least one of the phases containing thiocyanate. The hafnium is extracted into the organic phase while zirconium remains in the aqueous phase. Further recovery of zirconium is effected by stripping the onganic phase with a hydrochloric acid solution and commingling the resulting strip solution with the aqueous feed solution. Hexone is recovered and recycled by means of scrubbing the onganic phase with a sulfuric acid solution to remove the hafnium, and thiocyanate is recovered and recycled by means of neutralizing the effluent streams to obtain ammonium thiocyanate.

  12. Zirconium and hafnium

    USGS Publications Warehouse

    Jones, James V.; Piatak, Nadine M.; Bedinger, George M.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Zirconium and hafnium are corrosion-resistant metals that are widely used in the chemical and nuclear industries. Most zirconium is consumed in the form of the main ore mineral zircon (ZrSiO4, or as zirconium oxide or other zirconium chemicals. Zirconium and hafnium are both refractory lithophile elements that have nearly identical charge, ionic radii, and ionic potentials. As a result, their geochemical behavior is generally similar. Both elements are classified as incompatible because they have physical and crystallochemical properties that exclude them from the crystal lattices of most rock-forming minerals. Zircon and another, less common, ore mineral, baddeleyite (ZrO2), form primarily as accessory minerals in igneous rocks. The presence and abundance of these ore minerals in igneous rocks are largely controlled by the element concentrations in the magma source and by the processes of melt generation and evolution. The world’s largest primary deposits of zirconium and hafnium are associated with alkaline igneous rocks, and, in one locality on the Kola Peninsula of Murmanskaya Oblast, Russia, baddeleyite is recovered as a byproduct of apatite and magnetite mining. Otherwise, there are few primary igneous deposits of zirconium- and hafnium-bearing minerals with economic value at present. The main ore deposits worldwide are heavy-mineral sands produced by the weathering and erosion of preexisting rocks and the concentration of zircon and other economically important heavy minerals, such as ilmenite and rutile (for titanium), chromite (for chromium), and monazite (for rare-earth elements) in sedimentary systems, particularly in coastal environments. In coastal deposits, heavy-mineral enrichment occurs where sediment is repeatedly reworked by wind, waves, currents, and tidal processes. The resulting heavy-mineral-sand deposits, called placers or paleoplacers, preferentially form at relatively low latitudes on passive continental margins and supply 100 percent of

  13. Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

    NASA Astrophysics Data System (ADS)

    Habuka, Hitoshi; Yamaji, Masahiko; Kobori, Yoshitsugu; Horii, Sadayoshi; Kunii, Yasuo

    2009-12-01

    Hydrogen chloride gas removes the hafnium oxide film formed by atomic layer deposition at the etch rate of about 1 nm/min. A 100 nm-thick hafnium oxide film was perfectly etched off at 1173 K for 60 min by 100% hydrogen chloride gas at 100 sccm. A weight decrease in the hafnium oxide film was observed at temperatures higher than ca. 600 K, which corresponds to the sublimation point of hafnium tetrachloride. The etching by-product is considered to be hafnium tetrachloride. The etching technique developed in this study is expected to be applicable to various processes, such as the cleaning of a hafnium oxide film deposition reactor.

  14. Composition effects on mechanical properties of tungsten-rhenium-hafnium-carbon alloys

    NASA Technical Reports Server (NTRS)

    Witzke, W. R.

    1973-01-01

    The mechanical properties of rod and sheet fabricated from arc melted W-4Re-Hf-C alloys containing up to about 0.8 mol percent hafnium carbide (HfC) were evaluated in the as-worked condition. The DBTT's of electropolished bend and tensile specimens were independent of HfC content in this range but dependent on excess Hf or C above that required for stoichiometric HfC. Low temperature ductility was a maximum at Hf contents slightly in excess of stoichiometric. Variations in high temperature strength were also dependent on excess Hf and C. Maximum creep strengthening also occurred at Hf contents in excess of stoichiometric. Analysis of extracted second phase particles indicated that creep strength was reduced by increasing WC content in the HfC particles.

  15. SEPARATING HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Lister, B.A.J.; Duncan, J.F.

    1956-08-21

    A dilute aqueous solution of zirconyl chloride which is 1N to 2N in HCl is passed through a column of a cation exchange resin in acid form thereby absorbing both zirconium and associated hafnium impurity in the mesin. The cation exchange material with the absorbate is then eluted with aqueous sulfuric acid of a O.8N to 1.2N strength. The first portion of the eluate contains the zirconium substantially free of hafnium.

  16. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOEpatents

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  17. Carbide and carbonitride surface treatment method for refractory metals

    DOEpatents

    Meyer, G.A.; Schildbach, M.A.

    1996-12-03

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system including a reaction chamber, a source of elemental carbon, a heating subassembly and a source of reaction gases. Alternative methods of providing the elemental carbon and the reaction gases are provided, as well as methods of supporting the metal part, evacuating the chamber with a vacuum subassembly and heating all of the components to the desired temperature. 5 figs.

  18. Carbide and carbonitride surface treatment method for refractory metals

    DOEpatents

    Meyer, Glenn A.; Schildbach, Marcus A.

    1996-01-01

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system (10) including a reaction chamber (14), a source of elemental carbon (17), a heating subassembly (20) and a source of reaction gases (23). Alternative methods of providing the elemental carbon (17) and the reaction gases (23) are provided, as well as methods of supporting the metal part (12), evacuating the chamber (14) with a vacuum subassembly (18) and heating all of the components to the desired temperature.

  19. Effects of anode material on arcjet performance

    NASA Technical Reports Server (NTRS)

    Sankovic, John M.; Curran, Frank M.; Larson, C. A.

    1992-01-01

    Anodes fabricated from four different materials were tested in a modular arcjet thruster at 1 kW power level on nitrogen/hydrogen mixtures. A two-percent thoriated tungsten anode served as the control. Graphite was chosen for its ease in fabrication, but experienced severe erosion in the constrictor and diverging side. Hafnium carbide and lanthanum hexaboride were chosen for their low work functions but failed due to thermal stress and reacted with the propellant. When compared to the thoriated tungsten nozzle, thruster performance was significantly lower for the lanthanum hexaboride insert and the graphite nozzle, but was slightly higher for the hafnium carbide nozzle. Both the lanthanum hexaboride and hafnium carbide nozzle operated at higher voltages. An attempt was made to duplicate higher performance hafnium carbide results, but repeated attempts at machining a second anode insert were unsuccessful. Graphite, hafnium carbide, and lanthanum hexaboride do not appear viable anode materials for low power arcjet thrusters.

  20. Square lattice honeycomb tri-carbide fuels for 50 to 250 KN variable thrust NTP design

    NASA Astrophysics Data System (ADS)

    Anghaie, Samim; Knight, Travis; Gouw, Reza; Furman, Eric

    2001-02-01

    Ultrahigh temperature solid solution of tri-carbide fuels are used to design an ultracompact nuclear thermal rocket generating 950 seconds of specific impulse with scalable thrust level in range of 50 to 250 kilo Newtons. Solid solutions of tri-carbide nuclear fuels such as uranium-zirconium-niobium carbide. UZrNbC, are processed to contain certain mixing ratio between uranium carbide and two stabilizing carbides. Zirconium or niobium in the tri-carbide could be replaced by tantalum or hafnium to provide higher chemical stability in hot hydrogen environment or to provide different nuclear design characteristics. Recent studies have demonstrated the chemical compatibility of tri-carbide fuels with hydrogen propellant for a few to tens of hours of operation at temperatures ranging from 2800 K to 3300 K, respectively. Fuel elements are fabricated from thin tri-carbide wafers that are grooved and locked into a square-lattice honeycomb (SLHC) shape. The hockey puck shaped SLHC fuel elements are stacked up in a grooved graphite tube to form a SLHC fuel assembly. A total of 18 fuel assemblies are arranged circumferentially to form two concentric rings of fuel assemblies with zirconium hydride filling the space between assemblies. For 50 to 250 kilo Newtons thrust operations, the reactor diameter and length including reflectors are 57 cm and 60 cm, respectively. Results of the nuclear design and thermal fluid analyses of the SLHC nuclear thermal propulsion system are presented. .

  1. Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

    NASA Technical Reports Server (NTRS)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2009-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  2. Methods of repairing a substrate

    NASA Technical Reports Server (NTRS)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2011-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  3. Hafnium-Based Contrast Agents for X-ray Computed Tomography.

    PubMed

    Berger, Markus; Bauser, Marcus; Frenzel, Thomas; Hilger, Christoph Stephan; Jost, Gregor; Lauria, Silvia; Morgenstern, Bernd; Neis, Christian; Pietsch, Hubertus; Sülzle, Detlev; Hegetschweiler, Kaspar

    2017-05-15

    Heavy-metal-based contrast agents (CAs) offer enhanced X-ray absorption for X-ray computed tomography (CT) compared to the currently used iodinated CAs. We report the discovery of new lanthanide and hafnium azainositol complexes and their optimization with respect to high water solubility and stability. Our efforts culminated in the synthesis of BAY-576, an uncharged hafnium complex with 3:2 stoichiometry and broken complex symmetry. The superior properties of this asymmetrically substituted hafnium CA were demonstrated by a CT angiography study in rabbits that revealed excellent signal contrast enhancement.

  4. 40 CFR 471.90 - Applicability; description of the zirconium-hafnium forming subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... zirconium-hafnium forming subcategory. 471.90 Section 471.90 Protection of Environment ENVIRONMENTAL... POINT SOURCE CATEGORY Zirconium-Hafnium Forming Subcategory § 471.90 Applicability; description of the zirconium-hafnium forming subcategory. This subpart applies to discharges of pollutants to waters of the...

  5. Composition and method for brazing graphite to graphite

    DOEpatents

    Taylor, Albert J.; Dykes, Norman L.

    1984-01-01

    The present invention is directed to a brazing material for joining graphite structures that can be used at temperatures up to about 2800.degree. C. The brazing material formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600.degree. C. with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800.degree. C. so as to provide a brazed joint consisting essentially of hafnium carbide. This brazing temperature for hafnium carbide is considerably less than the eutectic temperature of hafnium carbide of about 3150.degree. C. The brazing composition also incorporates the thermosetting resin so that during the brazing operation the graphite structures may be temporarily bonded together by thermosetting the resin so that machining of the structures to final dimensions may be completed prior to the completion of the brazing operation. The resulting brazed joint is chemically and thermally compatible with the graphite structures joined thereby and also provides a joint of sufficient integrity so as to at least correspond with the strength and other properties of the graphite.

  6. 40 CFR 421.330 - Applicability: Description of the primary zirconium and hafnium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary zirconium and hafnium subcategory. 421.330 Section 421.330 Protection of Environment ENVIRONMENTAL... CATEGORY Primary Zirconium and Hafnium Subcategory § 421.330 Applicability: Description of the primary zirconium and hafnium subcategory. The provisions of this subpart are applicable to discharges resulting...

  7. Hafnium silicate and hafnium silicon oxynitride gate dielectrics for strained Si_xGe_1-x: Interface stability

    NASA Astrophysics Data System (ADS)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    Strained Si_xGe_1-x layers have gained considerable attention due to hole mobility enhancement, and ease of integration with Si-based CMOS technology. The deposition of stable high-κ dielectrics [1] such as hafnium silicate and hafnium silicon oxynitride in direct contact with SiGe would simultaneously improve the capacitance of the gate stack and lower the leakage current for high performance SiGe devices. However, the oxidation of the Si_xGe_1-x substrate either during dielectric deposition or post-deposition processing would degrade device performance due to the thermodynamic instability of germanium oxide [2,3]. Results from XPS, HR-TEM, and C-V, and I-V analyses after various annealing treatments will be presented for hafnium silicate and hafnium silicon oxynitride films deposited on strained Si_xGe_1-x(100), and correlated with dielectric-Si_xGe_1-x(100) interface stability. Implications to the introduction of these oxides as viable gate dielectric candidates for SiGe-based CMOS technology will be discussed. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001) [2] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [3] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995)

  8. Near Net-Shape, Ultra High Melting, Erosion Resistant Carbide/Metal Composites with Tailored Fibrillar Microstructures via the Displacive Compensation of Porosity Process

    DTIC Science & Technology

    2006-11-26

    vapor species, formed over tungsten trioxide powder, is 1.25xl0Ŗ atm at 1400°C and 1 atm total pressure (assuming an oxygen partial pressure greater...with CO(g). ■19- These hollow tungsten fibers were then carburized via reaction with CO(g) to generate the polycrystalline WC-based fibers shown in...of tungsten carbide via reaction with a hafnium-copper melt," Ada Mater., 57(13), 3924-3931 (2009).) The kinetic mechanism of incongruent reduction

  9. Composition and method for brazing graphite to graphite

    DOEpatents

    Taylor, A.J.; Dykes, N.L.

    1982-08-10

    A brazing material is described for joining graphite structures that can be used up to 2800/sup 0/C. The brazing material is formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600/sup 0/C with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800/sup 0/C so as to provide a brazed joint consisting essentially of hafnium carbide. The resulting brazed joint is chemically and thermally compatible with the graphite structures.

  10. A simple spectrophotometric method for determination of zirconium or hafnium in selected molybdenum-base alloys

    NASA Technical Reports Server (NTRS)

    Dupraw, W. A.

    1972-01-01

    A simple analytical procedure is described for accurately and precisely determining the zirconium or hafnium content of molybdenum-base alloys. The procedure is based on the reaction of the reagent Arsenazo III with zirconium or hafnium in strong hydrochloric acid solution. The colored complexes of zirconium or hafnium are formed in the presence of molybdenum. Titanium or rhenium in the alloy have no adverse effect on the zirconium or hafnium complex at the following levels in the selected aliquot: Mo, 10 mg; Re, 10 mg; Ti, 1 mg. The spectrophotometric measurement of the zirconium or hafnium complex is accomplished without prior separation with a relative standard deviation of 1.3 to 2.7 percent.

  11. Hafnium(IV) chloride complexes with chelating β-ketiminate ligands: Synthesis, spectroscopic characterization and volatility study

    NASA Astrophysics Data System (ADS)

    Patil, Siddappa A.; Medina, Phillip A.; Antic, Aleks; Ziller, Joseph W.; Vohs, Jason K.; Fahlman, Bradley D.

    2015-09-01

    The synthesis and characterization of four new β-ketiminate hafnium(IV) chloride complexes dichloro-bis[4-(phenylamido)pent-3-en-2-one]-hafnium (4a), dichloro-bis[4-(4-methylphenylamido)pent-3-en-2-one]-hafnium (4b), dichloro-bis[4-(4-methoxyphenylamido)pent-3-en-2-one]-hafnium (4c), and dichloro-bis[4-(4-chlorophenylamido)pent-3-en-2-one]-hafnium (4d) are reported. All the complexes (4a-d) were characterized by spectroscopic methods (1H NMR, 13C NMR, IR), and elemental analysis while the compound 4c was further examined by single-crystal X-ray diffraction, revealing that the complex is monomer with the hafnium center in octahedral coordination environment and oxygens of the chelating N-O ligands are trans to each other and the chloride ligands are in a cis arrangement. Volatile trends are established for four new β-ketiminate hafnium(IV) chloride complexes (4a-d). Sublimation enthalpies (ΔHsub) were calculated from thermogravimetric analysis (TGA) data, which show that, the dependence of ΔHsub on the molecular weight (4a-c) and inductive effects from chlorine (4d).

  12. Hafnium transistor process design for neural interfacing.

    PubMed

    Parent, David W; Basham, Eric J

    2009-01-01

    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  13. Thermochemistry of amorphous and crystalline zirconium and hafnium silicates.

    NASA Astrophysics Data System (ADS)

    Ushakov, S.; Brown, C. E.; Navrotsky, Alexandra; Boatner, L. A.; Demkov, A. A.; Wang, C.; Nguyen, B.-Y.

    2003-03-01

    Calorimetric investigation of amorphous and crystalline zirconium and hafnium silicates was performed as part of a research program on thermochemistry of alternative gate dielectrics. Amorphous hafnium and zirconium silicates with varying SiO2 content were synthesized by a sol-gel process. Crystalline zirconium and hafnium silicates (zircon and hafnon) were synthesized by solid state reaction at 1450 °C from amorphous gels and grown as single crystals from flux. High temperature oxide melt solution calorimetry in lead borate (2PbO.B2O3) solvent at 800 oC was used to measure drop solution enthalpies for amorphous and crystalline zirconium and hafnium silicates and corresponding oxides. Applying appropriate thermochemical cycles, formation enthalpy of crystalline ZrSiO4 (zircon) from binary oxides (baddeleite and quartz) at 298 K was calculated as -23 +/-2 kJ/mol and enthalpy difference between amorphous and crystalline zirconium silicate (vitrification enthalpy) was found to be 61 +/-3 kJ/mol. Crystallization onset temperatures of amorphous zirconium and hafnium silicates, as measured by differential scanning calorimetry (DSC), increased with silica content. The resulting crystalline phases, as characterized by X-ray diffraction (XRD), were tetragonal HfO2 and ZrO2. Critical crystallite size for tetragonal to monoclinic transformation of HfO2 in the gel was estimated as 6 +/-2 nm from XRD data Crystallization enthalpies per mole of hafnia and zirconia in gels decrease slightly together with crystallite size with increasing silica content, for example from -22 to -15 +/-1 kJ per mol of HfO2 crystallized at 740 and 1006 °C from silicates with 10 and 70 mol Applications of thermal analyses and solution calorimetry techniques together with first-principles density functional calculations to estimate interface and surface energies are discussed.

  14. Simultaneous determination of tantalum and hafnium in silicates by neutron activation analysis

    USGS Publications Warehouse

    Greenland, L.P.

    1968-01-01

    A neutron activation procedure suitable for the routine determination of tantalum and hafnium in silicates is described. The irradiated sample is fused with sodium peroxide and leached, and the insoluble hydroxides are dissolved in dilute hydrofluoric acid-hydrochloric acid. After LaF3 and AgCl scavenges, tantalum and hafnium are separated by anion exchange. Tantalum is obtained radiochemically pure; 233Pa and 95Zr contaminants in the hafnium fraction are resolved by ??-ray spectrometry. The chemical yield of the procedure is detemined after counting by re-irradiation. Values for the 8 U.S. Geological Survey standard rocks are reported. ?? 1968.

  15. Preparation of refractory cermet structures for lithium compatibility testing

    NASA Technical Reports Server (NTRS)

    Heestand, R. L.; Jones, R. A.; Wright, T. R.; Kizer, D. E.

    1973-01-01

    High-purity nitride and carbide cermets were synthesized for compatability testing in liquid lithium. A process was developed for the preparation of high-purity hafnium nitride powder, which was subsequently blended with tungsten powder or tantalum nitride and tungsten powders and fabricated into 3 in diameter billets by uniaxial hot pressing. Specimens were then cut from the billets for compatability testing. Similar processing techniques were applied to produce hafnium carbide and zirconium carbide cermets for use in the testing program. All billets produced were characterized with respect to chemistry, structure, density, and strength properties.

  16. Zirconium and hafnium in the southeastern Atlantic States

    USGS Publications Warehouse

    Mertie, J.B.

    1958-01-01

    The principal source of zirconium and hafnium is zircon, though a minor source is baddeleyite, mined only in Brazil. Zircon is an accessory mineral in igneous, metamorphic, and sedimentary rocks, but rarely occurs in hardrock in minable quantities. The principal sources of zircon are therefore alluvial deposits, which are mined in many countries of five continents. The principal commercial deposits in the United States are in Florida, though others exist elsewhere in the southeastern Coastal Plain. The evidence indicates that conditions for the accumulation of workable deposits of heavy minerals were more favorable during the interglacial stages of the Pleistocene epoch than during Recent time. Therefore detrital ores of large volume and high tenor are more likely to be found in the terrace deposits than along the present beaches. Other concentrations of heavy minerals, however, are possible at favored sites close to the Fall Line where the Tuscaloosa formation rests upon the crystalline rocks of the Piedmont province. A score of heavy and semiheavy minerals occur in the detrital deposits of Florida, but the principal salable minerals are ilmenite, leucoxene, rutile, and zircon, though monazite and staurolite are saved at some mining plants. Commercial deposits of heavy minerals are generally required to have a tenor of 4 percent, though ores with a lower tenor can be mined at a profit if the content of monazite is notably high. The percentages of zircon in the concentrates ranges from 10 to 16 percent, and in eastern Florida from 13 to 15 percent. Thus the tenor in zircon of the ore-bearing sands ranges from 0.4 to 0.6 percent. The content of hafnium in zircon is immaterial for many uses, but for some purposes very high or very low tenors in hafnium are required. Alluvial zircon cannot be separated into such varieties, which, if needed, must be obtained from sources in bedrock. It thus becomes necessary to determine the Hf : Zr ratios in zircon from many kinds of

  17. Separation of Zirconium and Hafnium: A Review

    NASA Astrophysics Data System (ADS)

    Xu, L.; Xiao, Y.; van Sandwijk, A.; Xu, Q.; Yang, Y.

    Zirconium is an ideal material for nuclear reactors due to its low absorption cross-section for thermal neutrons, whereas the typically contained hafnium with strong neutron-absorption is very harmful for zirconium. This paper provides an overview of the processes for separating hafnium from zirconium. The separation processes are roughly classified into hydro- and pyrometallurgical routes. The current dominant zirconium production route involves pyrometallurgical ore cracking, multi-step hydrometallurgical liquid-liquid extraction for hafnium removal and the reduction of zirconium tetrachloride to the pure metal by the Kroll process. The lengthy hydrometallurgical Zr-Hf separation operations leads to high production cost, intensive labour and heavy environmental burden. Using a compact pyrometallurgical separation method can simplify the whole production flowsheet with a higher process efficiency. The known separation methods are discussed based on the following reaction features: redox characteristics, volatility, electrochemical properties and molten salt extraction. The commercially operating extractive distillation process is a significant advance in Zr-Hf separation technology but it suffers from high process maintenance cost. The recently developed new process based on molten salt-metal equilibrium for Zr-Hf separation shows a great potential for industrial application, which is compact for nuclear grade zirconium production starting from crude ore. In the present paper, the available separation technologies are compared. The advantages and disadvantages as well as future directions of research and development for nuclear grade zirconium production are discussed.

  18. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rodenbücher, C.; Hildebrandt, E.; Sharath, S. U.

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films providesmore » a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.« less

  19. High P-T phase transitions and P-V-T equation of state of hafnium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hrubiak, Rostislav; Drozd, Vadym; Karbasi, Ali

    2016-07-29

    We measured the volume of hafnium at several pressures up to 67 GPa and at temperatures between 300 to 780 K using a resistively heated diamond anvil cell with synchrotron x-ray diffraction at the Advanced Photon Source. The measured data allows us to determine the P-V-T equation of state of hafnium. The previously described [Xia et al., Phys. Rev. B 42, 6736-6738 (1990)] phase transition from hcp ({alpha}) to simple hexagonal ({omega}) phase at 38 GPa at room temperature was not observed even up to 51 GPa. The {omega} phase was only observed at elevated temperatures. Our measurements have alsomore » improved the experimental constraint on the high P-T phase boundary between the {omega} phase and high pressure bcc ({beta}) phase of hafnium. Isothermal room temperature bulk modulus and its pressure derivative for the {alpha}-phase of hafnium were measured to be B{sub 0} = 112.9{+-}0.5 GPa and B{sub 0}'=3.29{+-}0.05, respectively. P-V-T data for the {alpha}-phase of hafnium was used to obtain a fit to a thermodynamic P-V-T equation of state based on model by Brosh et al. [CALPHAD 31, 173-185 (2007)].« less

  20. Hafnium transistor design for neural interfacing.

    PubMed

    Parent, David W; Basham, Eric J

    2008-01-01

    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  1. Etude de la nitruration carbothermique du dioxyde de hafnium par diffraction X à haute température

    NASA Astrophysics Data System (ADS)

    Pialoux, A.

    1993-03-01

    The carbothermal reduction of hafnium dioxide under atmospheric level nitrogen pressure has been investigated using a graphite resistance high temperature X-ray diffractometer up to around 2300 K. A carbon transfer reaction through the gaseous phase (N 2, CO/CO 2) is shown to precede, then to compete the direct reduction of the hafnium oxide by the graphite in pure nitrogen. A complex mechanism has been found that accounts for the formation of hafnium dioxynitride and possibly of three other hafnium oxynitrides, then of hafnium mononitride and hafnium monocarbonitride, along two different steps between 1613 and 1923 K. An evaluation has been made concerning the composition of these γ 1- HfO 2-xN x/2□ x/2 (CaF 2-type structure), γ 2- Hf 7O 11N 2, γ 3- Hf 7O 8N 4 (rhombohedral), γ 4- Hf 2ON 2 (Mn 2O 3-type structure), HfN and HfN 1-zC z (NaCl-type structure) phases, considering the variations of their lattice parameters and the available data in the literature, especially on the isomorphous compounds of zirconium. It must be emphasized the new γ 1- HfO 2-xN x/2 phase, the dilatation of which is linear ( overlineα = 12×10 -6K -1), shows a constant composition from 2158 down to 1473 K (x ≈ 0,2). But under 1473 K, inevitably, the hafnium dioxynitride disappears, and poorly crystallized monoclinic αHfO 2 and rhombohedral γ 2- Hf 7O 11N 2 are formed.

  2. RF sputtered silicon and hafnium nitrides as applied to 440C steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1984-01-01

    Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

  3. Mineral resource of the month: zirconium and hafnium

    USGS Publications Warehouse

    Gambogi, Joseph

    2007-01-01

    Zirconium and hafnium are corrosion-resistant metals that are grouped in the same family as titanium on the periodic table. The two elements commonly occur in oxide and silicate minerals and have significant economic importance in everything from ink, ceramics and golf shoes to nuclear fuel rods.

  4. SEPARATING HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Lister, B.A.J.; Duncan, J.F.; Hutcheon, J.M.

    1956-08-21

    Substantially complete separation of zirconium from hafnium may be obtained by elution of ion exchange material, on which compounds of the elements are adsorbed, with an approximately normal solution of sulfuric acid. Preferably the acid concentration is between 0.8 N amd 1.2 N, amd should not exceed 1.5 N;. Increasing the concentration of sulfate ion in the eluting solution by addition of a soluble sulfate, such as sodium sulfate, has been found to be advantageous. The preferred ion exchange materials are sulfonated polystyrene resins such as Dowex 50,'' and are preferably arranged in a column through which the solutions are passed.

  5. Effect of cathode cooling efficiency and oxygen plasma gas pressure on the hafnium cathode wall temperature

    NASA Astrophysics Data System (ADS)

    Ashtekar, Koustubh; Diehl, Gregory; Hamer, John

    2012-10-01

    The hafnium cathode is widely used in DC plasma arc cutting (PAC) under an oxygen gas environment to cut iron and iron alloys. The hafnium erosion is always a concern which is controlled by the surface temperature. In this study, the effect of cathode cooling efficiency and oxygen gas pressure on the hafnium surface temperature are quantified. The two layer cathode sheath model is applied on the refractive hafnium surface while oxygen species (O2, O, O+, O++, e-) are considered within the thermal dis-equilibrium regime. The system of non-linear equations comprising of current density balance, heat flux balance at both the cathode surface and the sheath-ionization layer is coupled with the plasma gas composition solver. Using cooling heat flux, gas pressure and current density as inputs; the cathode wall temperature, electron temperature, and sheath voltage drop are calculated. Additionally, contribution of emitted electron current (Je) and ions current (Ji) to the total current flux are estimated. Higher gas pressure usually reduces Ji and increases Je that reduces the surface temperature by thermionic cooling.

  6. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    PubMed

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  7. Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

    NASA Astrophysics Data System (ADS)

    Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos

    2004-09-01

    In this work thin films of hafnium oxide are deposited on Si(100) substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of 250-350ºC. Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with A˚ scale resolution, and spectroscopic ellipsometry. The observed ALD rate is ~1.4 A˚ per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the HfO2 growth is investigated in detail.

  8. Compatibility of refractory materials for nuclear reactor poison control systems

    NASA Technical Reports Server (NTRS)

    Sinclair, J. H.

    1974-01-01

    Metal-clad poison rods have been considered for the control system of an advanced space power reactor concept studied at the NASA Lewis Research Center. Such control rods may be required to operate at temperatures of about 140O C. Selected poison materials (including boron carbide and the diborides of zirconium, hafnium, and tantalum) were subjected to 1000-hour screening tests in contact with candidate refractory metal cladding materials (including tungsten and alloys of tantalum, niobium, and molybdenum) to assess the compatibility of these materials combinations at the temperatures of interest. Zirconium and hafnium diborides were compatible with refractory metals at 1400 C, but boron carbide and tantalum diboride reacted with the refractory metals at this temperature. Zirconium diboride also showed promise as a reaction barrier between boron carbide and tungsten.

  9. Review of anhydrous zirconium-hafnium separation techniques. Information circular/1984

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Skaggs, R.L.; Rogers, D.T.; Hunter, D.B.

    1983-12-01

    Sixteen nonaqueous techniques conceived to replace the current aqueous scheme for separating hafnium and zirconium tetrachlorides were reviewed and evaluated by the Bureau of Mines. The methods are divided into two classes: separation by fractional volatilization of the tetrachlorides, which takes advantage of the higher volatility of hafnium tetrachloride; and separation by chemical techniques, based on differences in chemical behavior of the two tetrachlorides. The criteria used to evaluate separation methods were temperature, pressure, separation factor per equilibrium stage, complexity, compatibility with existing technology, and potential for continuous operation. Three processes were selected as being most promising: (1) high-pressure distillation,more » (2) extractive distillation from a molten salt, and (3) preferential reduction of gaseous ZrCl4. Any of the proposed nonaqueous Hf-Zr separation schemes must be supplemented with additional purification to remove trace impurities.« less

  10. Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

    NASA Astrophysics Data System (ADS)

    Li, Min

    High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a

  11. Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Starschich, S.; Böttger, U.; Menzel, S.

    The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of −160 °C to 100 °C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution ofmore » oxygen vacancies is the origin of the wake-up effect.« less

  12. Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou

    2015-11-23

    This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with themore » bias stability and thermal stability.« less

  13. Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

    NASA Astrophysics Data System (ADS)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

  14. Article having an improved platinum-aluminum-hafnium protective coating

    NASA Technical Reports Server (NTRS)

    Nagaraj, Bangalore Aswatha (Inventor); Williams, Jeffrey Lawrence (Inventor)

    2005-01-01

    An article protected by a protective coating has a substrate and a protective coating having an outer layer deposited upon the substrate surface and a diffusion zone formed by interdiffusion of the outer layer and the substrate. The protective coating includes platinum, aluminum, no more than about 2 weight percent hafnium, and substantially no silicon. The outer layer is substantially a single phase.

  15. Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

    DTIC Science & Technology

    2012-02-21

    passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

  16. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1976-01-01

    Impact energy absorbing layers (EALs) comprised of partially densified silicon carbide were formed in situ on fully sinterable silicon carbide substrates. After final sintering, duplex silicon carbide structures resulted which were comprised of a fully sintered, high density silicon carbide substrate or core, overlayed with an EAL of partially sintered silicon carbide integrally bonded to its core member. Thermal cycling tests proved such structures to be moderately resistant to oxidation and highly resistant to thermal shock stresses. The strength of the developed structures in some cases exceeded but essentially it remained the same as the fully sintered silicon carbide without the EAL. Ballistic impact tests indicated that substantial improvements in the toughness of sintered silicon carbide were achieved by the use of the partially densified silicon carbide EALs.

  17. Hafnium-Based Bulk Metallic Glasses for Kinetic Energy Penetrators

    DTIC Science & Technology

    2004-12-01

    uranium -based (DU) and tungsten- nickel -iron (W-Ni-Fe) composite kinetic energy (KE) munitions is primarily ascribed to their high densities (U: ρ...based on an invariant point identified in the hafnium- copper- nickel ternary system. They are denser than zirconium-based glass-forming compositions...depleted- uranium penetrators. 1. INTRODUCTION 1.1 Criterion for Effective Kinetic Energy Penetrator Performance The lethality of depleted

  18. Process for microwave sintering boron carbide

    DOEpatents

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  19. Process for microwave sintering boron carbide

    DOEpatents

    Holcombe, Cressie E.; Morrow, Marvin S.

    1993-01-01

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  20. Inter-diffusion of copper and hafnium as studied by x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Pearson, Justin; Chourasia, A. R.

    The Cu/Hf interface has been characterized by x-ray photoelectron spectroscopy. Thin films (thicknesses ranging from 100 nm to 150 nm) of hafnium were deposited on a silicon substrate. About 80 nm of copper was then deposited on such samples. The e-beam method was used for the deposition. The samples were annealed for 30 min at temperatures of 100, 200, 300, 400, and 500°C. The inter-diffusion of copper and hafnium was investigated by sequential sputter depth profiling and x-ray photoelectron spectroscopy. The interdiffusion in each case was analyzed by the Matano-Boltzmann's procedure using the Fick's second law. The interdiffusion coefficients and the width of the interface as determined from the data have been correlated with the annealing temperature. Supported by Organized Research, TAMU-Commerce.

  1. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1975-01-01

    Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

  2. Microwave sintering of boron carbide

    DOEpatents

    Blake, R.D.; Katz, J.D.; Petrovic, J.J.; Sheinberg, H.

    1988-06-10

    A method for forming boron carbide into a particular shape and densifying the green boron carbide shape. Boron carbide in powder form is pressed into a green shape and then sintered, using a microwave oven, to obtain a dense boron carbide body. Densities of greater than 95% of theoretical density have been obtained. 1 tab.

  3. The performance of hafnium and gadolinium self powered neutron detectors in the TREAT reactor

    NASA Astrophysics Data System (ADS)

    Imel, G. R.; Hart, P. R.

    1996-05-01

    The use of gadolinium and hafnium self powered neutron detectors in a transient reactor is described in this paper. The detectors were calibrated to the fission rate of U-235 using calibrated fission chambers; the calibration factors were tested in two reactors in steady state and found to be consistent. Calibration of the detectors in transient reactor conditions was done by using uranium wires that were analyzed by radiochemistry techniques to determine total fissions during the transient. This was correlated to the time-integrated current of the detectors during the transient. A temperature correction factor was derived to account for self-shielding effects in the hafnium and gadolinium detectors. The dynamic response of the detectors under transient conditions was studied, and found to be excellent.

  4. "Decarbonization" of an imino N-heterocyclic carbene via triple benzyl migration from hafnium

    USDA-ARS?s Scientific Manuscript database

    An imino N-heterocyclic carbene underwent three sequential benzyl migrations upon reaction with tetrabenzylhafnium, resulting in complete removal of the carbene carbon from the ligand. The resulting eneamido-amidinato hafnium complex showed alkene polymerization activity comparable to that of a prec...

  5. Chemical precursors to non-oxide ceramics: Macro to nanoscale materials

    NASA Astrophysics Data System (ADS)

    Forsthoefel, Kersten M.

    Non-oxide ceramics exhibit a number of important properties that make them ideal for technologically important applications (thermal and chemical stability, high strength and hardness, wear-resistance, light weight, and a range of electronic and optical properties). Unfortunately, traditional methodologies to these types of materials are limited to fairly simple shapes and complex processed forms cannot be attained through these methods. The establishment of the polymeric precursor approach has allowed for the generation of advanced materials, such as refractory non-oxide ceramics, with controlled compositions, under moderate conditions, and in processed forms. The goal of the work described in this dissertation was both to develop new processible precursors to technologically important ceramics and to achieve the formation of advanced materials in processed forms. One aspect of this research exploited previously developed preceramic precursors to boron carbide, boron nitride and silicon carbide for the generation of a wide variety of advanced materials: (1) ultra-high temperature ceramic (UHTC) structural materials composed of hafnium boride and related composite materials, (2) the quaternary borocarbide superconductors, and (3) on the nanoscale, non-oxide ceramic nanotubules. The generation of the UHTC and the quaternary borocarbide materials was achieved through a method that employs a processible polymer/metal(s) dispersion followed by subsequent pyrolyses. In the case of the UHTC, hafnium oxide, hafnium, or hafnium boride powders were dispersed in a suitable precursor to afford hafnium borides or related composite materials (HfB2/HfC, HfB2/HfN, HfB2/SiC) in high yields and purities. The quaternary borocarbide superconducting materials were produced from pyrolyses of dispersions containing appropriate stoichiometric amounts of transition metal, lanthanide metal, and the polyhexenyldecaborane polymer. Both chemical vapor deposition (CVD) based routes employing a

  6. Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

    2018-01-01

    Low concentrations (<1 at%) of hafnium doped into diamond-like thin films (Hf-DLC) were deposited on 316L stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

  7. Novel Routes for Sintering of Ultra-high Temperature Ceramics and their Properties

    DTIC Science & Technology

    2014-10-31

    UHTCs charge (zirconium and hafnium borides , SiC) with additives (chromium carbide, nickel, chromium, etc.), which activate sintering process, is...temperature phases in a form of carboborides of zirconium and bi borides of zirconium or chromium. Elevation of densification rate of sintered borides is...superplasticity under the slip mechanism of zirconium boride and silica carbide grains on grain boundary interlayers with nanocrystalline grains of carbon

  8. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  9. PROCESS OF RECOVERING ZIRCONIUM VALUES FROM HAFNIUM VALUES BY SOLVENT EXTRACTION WITH AN ALKYL PHOSPHATE

    DOEpatents

    Peppard, D.F.

    1960-02-01

    A process of separating hafnium nitrate from zirconium nitrate contained in a nitric acid solution by selectively. extracting the zirconium nitrate with a water-immiscible alkyl phosphate is reported.

  10. Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

    NASA Astrophysics Data System (ADS)

    Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

    Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

  11. Boron-carbide-aluminum and boron-carbide-reactive metal cermets

    DOEpatents

    Halverson, Danny C.; Pyzik, Aleksander J.; Aksay, Ilhan A.

    1986-01-01

    Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

  12. Fabrication of cermet bearings for the control system of a high temperature lithium cooled nuclear reactor

    NASA Technical Reports Server (NTRS)

    Yacobucci, H. G.; Heestand, R. L.; Kizer, D. E.

    1973-01-01

    The techniques used to fabricate cermet bearings for the fueled control drums of a liquid metal cooled reference-design reactor concept are presented. The bearings were designed for operation in lithium for as long as 5 years at temperatures to 1205 C. Two sets of bearings were fabricated from a hafnium carbide - 8-wt. % molybdenum - 2-wt. % niobium carbide cermet, and two sets were fabricated from a hafnium nitride - 10-wt. % tungsten cermet. Procedures were developed for synthesizing the material in high purity inert-atmosphere glove boxes to minimize oxygen content in order to enhance corrosion resistance. Techniques were developed for pressing cylindrical billets to conserve materials and to reduce machining requirements. Finishing was accomplished by a combination of diamond grinding, electrodischarge machining, and diamond lapping. Samples were characterized in respect to composition, impurity level, lattice parameter, microstructure and density.

  13. Anisotropic Tribological Properties of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

  14. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  15. Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

    2017-07-01

    In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

  16. Hafnium isotope evidence for a transition in the dynamics of continental growth 3.2 Gyr ago.

    PubMed

    Næraa, T; Scherstén, A; Rosing, M T; Kemp, A I S; Hoffmann, J E; Kokfelt, T F; Whitehouse, M J

    2012-05-30

    Earth's lithosphere probably experienced an evolution towards the modern plate tectonic regime, owing to secular changes in mantle temperature. Radiogenic isotope variations are interpreted as evidence for the declining rates of continental crustal growth over time, with some estimates suggesting that over 70% of the present continental crustal reservoir was extracted by the end of the Archaean eon. Patterns of crustal growth and reworking in rocks younger than three billion years (Gyr) are thought to reflect the assembly and break-up of supercontinents by Wilson cycle processes and mark an important change in lithosphere dynamics. In southern West Greenland numerous studies have, however, argued for subduction settings and crust growth by arc accretion back to 3.8 Gyr ago, suggesting that modern-day tectonic regimes operated during the formation of the earliest crustal rock record. Here we report in situ uranium-lead, hafnium and oxygen isotope data from zircons of basement rocks in southern West Greenland across the critical time period during which modern-like tectonic regimes could have initiated. Our data show pronounced differences in the hafnium isotope-time patterns across this interval, requiring changes in the characteristics of the magmatic protolith. The observations suggest that 3.9-3.5-Gyr-old rocks differentiated from a >3.9-Gyr-old source reservoir with a chondritic to slightly depleted hafnium isotope composition. In contrast, rocks formed after 3.2 Gyr ago register the first additions of juvenile depleted material (that is, new mantle-derived crust) since 3.9 Gyr ago, and are characterized by striking shifts in hafnium isotope ratios similar to those shown by Phanerozoic subduction-related orogens. These data suggest a transitional period 3.5-3.2 Gyr ago from an ancient (3.9-3.5 Gyr old) crustal evolutionary regime unlike that of modern plate tectonics to a geodynamic setting after 3.2 Gyr ago that involved juvenile crust generation by plate

  17. Silicon carbide ceramic production

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

  18. Methods of producing continuous boron carbide fibers

    DOEpatents

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  19. Methods for producing silicon carbide fibers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Garnier, John E.; Griffith, George W.

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  20. Slow DNA Transport through Nanopores in Hafnium Oxide Membranes

    PubMed Central

    Bell, David C.; Cohen-Karni, Tzahi; Rosenstein, Jacob K.; Wanunu, Meni

    2016-01-01

    We present a study of double- and single-stranded DNA transport through nanopores fabricated in ultrathin (2–7 nm thick) free-standing hafnium oxide (HfO2) membranes. The high chemical stability of ultrathin HfO2 enables long-lived experiments with <2 nm diameter pores that last several hours, in which we observe >50 000 DNA translocations with no detectable pore expansion. Mean DNA velocities are slower than velocities through comparable silicon nitride pores, providing evidence that HfO2 nanopores have favorable physicochemical interactions with nucleic acids that can be leveraged to slow down DNA in a nanopore. PMID:24083444

  1. Defeating Hard and Deeply Buried Targets in 2035

    DTIC Science & Technology

    2012-02-15

    Hafnium Carbide 12.2 33 722 120 3000 Tantalum 16.4 24 680 113 3017 Tantalum Carbide 14.3 28 746 124 3880 Tungsten 19.3 21 550 92 3422 Tungsten ...lethality. Concepts for employing the weapon included “vertical delivery with the bomb detonated at or just outside portal, skip bomb with short fuse (first...or second contact), skip bomb with long fuse (penetrate door, maximize distance down adits [underground facility entrances or passages]), and

  2. Carbide coated fibers in graphite-aluminum composites

    NASA Technical Reports Server (NTRS)

    Imprescia, R. J.; Levinson, L. S.; Reiswig, R. D.; Wallace, T. C.; Williams, J. M.

    1975-01-01

    The study of protective-coupling layers of refractory metal carbides on the graphite fibers prior to their incorporation into composites is presented. Such layers should be directly wettable by liquid aluminum and should act as diffusion barriers to prevent the formation of aluminum carbide. Chemical vapor deposition was used to uniformly deposit thin, smooth, continuous coats of ZrC on the carbon fibers of tows derived from both rayon and polyacrylonitrile. A wet chemical coating of the fibers, followed by high-temperature treatment, was used, and showed promise as an alternative coating method. Experiments were performed to demonstrate the ability of aluminum alloys to wet carbide surfaces. Titanium carbide, zirconium carbide and carbide-coated graphite surfaces were successfully wetted. Results indicate that initial attempts to wet surfaces of ZrC-coated carbon fibers appear successful.

  3. Cathodoluminescence Study of Hafnium Oxide

    NASA Astrophysics Data System (ADS)

    Purcell, Emily; Hengehold, Robert; McClory, John

    2011-10-01

    Hafnium dioxide (HfO2) is increasingly being used in place of silicon oxide as a gate insulator in field effect transistors. This is primarily due to its high dielectric constant, κ, of 25. Samples of HfO2 were grown by either atomic layer deposition (ALD) or pulsed laser deposition (PLD), with the PLD samples having assorted substrate temperatures during deposition (300 C, 500 C, and 750 C). Cathodoluminescence (CL) was chosen as the technique used for studying these HfO2 samples. The CL system used was capable of beam energies ranging from 1 keV to 20 keV and beam currents ranging from 10 μA to 50 μA. A Monte Carlo calculation using CASINO software was performed in order to determine the beam energy for the desired depth of penetration. Measurements were taken at sample temperatures ranging from 7K (closed cycled cryostat) to 300K (room temperature), as well as at various beam energies and beam currents. Comparison will be made between the PLD and ALD spectra.

  4. Method of fabricating porous silicon carbide (SiC)

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  5. Silicon carbide thyristor

    NASA Technical Reports Server (NTRS)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  6. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    PubMed

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  7. Method for preparing boron-carbide articles

    DOEpatents

    Benton, S.T.; Masters, D.R.

    1975-10-21

    The invention is directed to the preparation of boron carbide articles of various configurations. A stoichiometric mixture of particulate boron and carbon is confined in a suitable mold, heated to a temperature in the range of about 1250 to 1500$sup 0$C for effecting a solid state diffusion reaction between the boron and carbon for forming the boron carbide (B$sub 4$C), and thereafter the resulting boron-carbide particles are hot-pressed at a temperature in the range of about 1800 to 2200$sup 0$C and a pressure in the range of about 1000 to 4000 psi for densifying and sintering the boron carbide into the desired article.

  8. New Icosahedral Boron Carbide Semiconductors

    NASA Astrophysics Data System (ADS)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  9. Formation of dysprosium carbide on the graphite (0001) surface

    DOE PAGES

    Lii-Rosales, Ann; Zhou, Yinghui; Wallingford, Mark; ...

    2017-07-12

    When using scanning tunneling microscopy, we characterize a surface carbide that forms such that Dy is deposited on the basal plane of graphite. In order to form carbide islands on terraces, Dy is first deposited at 650–800 K, which forms large metallic islands. Upon annealing at 1000 K, these clusters convert to carbide. Deposition directly at 1000 K is ineffective because nucleation on terraces is inhibited. Reaction is signaled by the fact that each carbide cluster is partially or totally surrounded by an etch pit. The etch pit is one carbon layer deep for most carbide clusters. Carbide clusters aremore » also identifiable by striations on their surfaces. Based on mass balance, and assuming that only the surface layer of carbon is involved in the reaction, the carbide has stoichiometry D y 2 C . This is Dy-rich compared with the most common bulk carbide Dy C 2 , which may reflect limited surface carbon transport to the carbide.« less

  10. Aminopyridinate-FI hybrids, their hafnium and titanium complexes, and their application in the living polymerization of 1-hexene.

    PubMed

    Haas, Isabelle; Dietel, Thomas; Press, Konstantin; Kol, Moshe; Kempe, Rhett

    2013-10-11

    Based on two well-established ligand systems, the aminopyridinato (Ap) and the phenoxyimine (FI) ligand systems, new Ap-FI hybrid ligands were developed. Four different Ap-FI hybrid ligands were synthesized through a simple condensation reaction and fully characterized. The reaction of hafnium tetrabenzyl with all four Ap-FI hybrid ligands exclusively led to mono(Ap-FI) complexes of the type [(Ap-FI)HfBn2 ]. The ligands acted as tetradentate dianionic chelates. Upon activation with tris(pentafluorophenyl)borane, the hafnium-dibenzyl complexes led to highly active catalysts for the polymerization of 1-hexene. Ultrahigh molecular weights and extremely narrow polydispersities support the living nature of this polymerization process. A possible deactivation product of the hafnium catalysts was characterized by single-crystal X-ray analysis and is discussed. The coordination modes of these new ligands were studied with the help of model titanium complexes. The reaction of titanium(IV) isopropoxide with ligand 1 led to a mono(Ap-FI) complex, which showed the desired fac-mer coordination mode. Titanium (IV) isopropoxide reacted with ligand 4 to give a complex of the type [(ApH-FI)2 Ti(OiPr)2 ], which featured the ligand in its monoanionic form. The two titanium complexes were characterized by X-ray crystal-structure analysis. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Silicon carbide fibers and articles including same

    DOEpatents

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  12. Compatibility of buffered uranium carbides with tungsten.

    NASA Technical Reports Server (NTRS)

    Phillips, W. M.

    1971-01-01

    Results of compatibility tests between tungsten and hyperstoichiometric uranium carbide alloys run at 1800 C for 1000 and 2500 hours. These tests compared tungsten-buffered uranium carbide with tungsten-buffered uranium-zirconium carbide. The zirconium carbide addition appeared to widen the homogeneity range of the uranium carbide, making additional carbon available for reaction. Reaction layers could be formed by either of two diffusion paths, one producing UWC2, while the second resulted in the formation of W2C. UWC2 acts as a diffusion barrier for carbon and slows the growth of the reaction layer with time, while carbon diffusion is relatively rapid in W2C, allowing equilibrium to be reached in less than 2500 hours at a temperature of 1800 C.

  13. METHOD OF JOINING CARBIDES TO BASE METALS

    DOEpatents

    Krikorian, N.H.; Farr, J.D.; Witteman, W.G.

    1962-02-13

    A method is described for joining a refractory metal carbide such as UC or ZrC to a refractory metal base such as Ta or Nb. The method comprises carburizing the surface of the metal base and then sintering the base and carbide at temperatures of about 2000 deg C in a non-oxidizing atmosphere, the base and carbide being held in contact during the sintering step. To reduce the sintering temperature and time, a sintering aid such as iron, nickel, or cobait is added to the carbide, not to exceed 5 wt%. (AEC)

  14. Silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  15. Surface and Bulk Carbide Transformations in High-Speed Steel

    PubMed Central

    Godec, M.; Večko Pirtovšek, T.; Šetina Batič, B.; McGuiness, P.; Burja, J.; Podgornik, B.

    2015-01-01

    We have studied the transformation of carbides in AISI M42 high-speed steels in the temperature window used for forging. The annealing was found to result in the partial transformation of the large, metastable M2C carbides into small, more stable grains of M6C, with an associated change in the crystal orientation. In addition, MC carbides form during the transformation of M2C to M6C. From the high-speed-steel production point of view, it is beneficial to have large, metastable carbides in the cast structure, which later during annealing, before the forging, transform into a structure of polycrystalline carbides. Such carbides can be easily decomposed into several small carbides, which are then randomly distributed in the microstructure. The results also show an interesting difference in the carbide-transformation reactions on the surface versus the bulk of the alloy, which has implications for in-situ studies of bulk phenomena that are based on surface observations. PMID:26537780

  16. Metal–Organic Nanosheets Formed via Defect-Mediated Transformation of a Hafnium Metal–Organic Framework

    PubMed Central

    2017-01-01

    We report a hafnium-containing MOF, hcp UiO-67(Hf), which is a ligand-deficient layered analogue of the face-centered cubic fcu UiO-67(Hf). hcp UiO-67 accommodates its lower ligand:metal ratio compared to fcu UiO-67 through a new structural mechanism: the formation of a condensed “double cluster” (Hf12O8(OH)14), analogous to the condensation of coordination polyhedra in oxide frameworks. In oxide frameworks, variable stoichiometry can lead to more complex defect structures, e.g., crystallographic shear planes or modules with differing compositions, which can be the source of further chemical reactivity; likewise, the layered hcp UiO-67 can react further to reversibly form a two-dimensional metal–organic framework, hxl UiO-67. Both three-dimensional hcp UiO-67 and two-dimensional hxl UiO-67 can be delaminated to form metal–organic nanosheets. Delamination of hcp UiO-67 occurs through the cleavage of strong hafnium-carboxylate bonds and is effected under mild conditions, suggesting that defect-ordered MOFs could be a productive route to porous two-dimensional materials. PMID:28343394

  17. Metal-Organic Nanosheets Formed via Defect-Mediated Transformation of a Hafnium Metal-Organic Framework.

    PubMed

    Cliffe, Matthew J; Castillo-Martínez, Elizabeth; Wu, Yue; Lee, Jeongjae; Forse, Alexander C; Firth, Francesca C N; Moghadam, Peyman Z; Fairen-Jimenez, David; Gaultois, Michael W; Hill, Joshua A; Magdysyuk, Oxana V; Slater, Ben; Goodwin, Andrew L; Grey, Clare P

    2017-04-19

    We report a hafnium-containing MOF, hcp UiO-67(Hf), which is a ligand-deficient layered analogue of the face-centered cubic fcu UiO-67(Hf). hcp UiO-67 accommodates its lower ligand:metal ratio compared to fcu UiO-67 through a new structural mechanism: the formation of a condensed "double cluster" (Hf 12 O 8 (OH) 14 ), analogous to the condensation of coordination polyhedra in oxide frameworks. In oxide frameworks, variable stoichiometry can lead to more complex defect structures, e.g., crystallographic shear planes or modules with differing compositions, which can be the source of further chemical reactivity; likewise, the layered hcp UiO-67 can react further to reversibly form a two-dimensional metal-organic framework, hxl UiO-67. Both three-dimensional hcp UiO-67 and two-dimensional hxl UiO-67 can be delaminated to form metal-organic nanosheets. Delamination of hcp UiO-67 occurs through the cleavage of strong hafnium-carboxylate bonds and is effected under mild conditions, suggesting that defect-ordered MOFs could be a productive route to porous two-dimensional materials.

  18. Silicon Carbide Integrated Circuit Chip

    NASA Image and Video Library

    2015-02-17

    A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

  19. Silicon carbide semiconductor technology for high temperature and radiation environments

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.

    1993-01-01

    Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

  20. Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

    DTIC Science & Technology

    2007-03-01

    COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Lonnie Carlson, Major...DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Presented to the Faculty Department of Engineering Physics Graduate School...DISTRIBUTION UNLIMITED AFIT/GNE/ENP/07-01 COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE Lonnie

  1. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    NASA Technical Reports Server (NTRS)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  2. Low-temperature electrical resistivity of transition-metal carbides

    NASA Astrophysics Data System (ADS)

    Allison, C. Y.; Finch, C. B.; Foegelle, M. D.; Modine, F. A.

    1988-10-01

    The electrical resistivities of single crystals of ZrC 0.93, VC 0.88, NbC 0.95, and TaC 0.99 were measured from liquid helium temperature to 350 K. The Bloch-Gruneisen theory of electrical resistivity gives a good fit to the zirconium carbide and the vanadium carbide measurements. In contrast, the resistivities of the two superconducting crystals, tantalum carbide and niobium carbide, show excellent agreement with the Wilson model. The appropriate model appears to depend upon the superconducting properties of the crystals.

  3. Breaking the icosahedra in boron carbide

    PubMed Central

    Xie, Kelvin Y.; An, Qi; Sato, Takanori; Breen, Andrew J.; Ringer, Simon P.; Goddard, William A.; Cairney, Julie M.; Hemker, Kevin J.

    2016-01-01

    Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials. PMID:27790982

  4. Direct Electrochemical Preparation of Cobalt, Tungsten, and Tungsten Carbide from Cemented Carbide Scrap

    NASA Astrophysics Data System (ADS)

    Xiao, Xiangjun; Xi, Xiaoli; Nie, Zuoren; Zhang, Liwen; Ma, Liwen

    2017-02-01

    A novel process of preparing cobalt, tungsten, and tungsten carbide powders from cemented carbide scrap by molten salt electrolysis has been investigated in this paper. In this experiment, WC-6Co and NaCl-KCl salt were used as sacrificial anode and electrolyte, respectively. The dissolution potential of cobalt and WC was determined by linear sweep voltammetry to be 0 and 0.6 V ( vs Ag/AgCl), respectively. Furthermore, the electrochemical behavior of cobalt and tungsten ions was investigated by a variety of electrochemical techniques. Results of cyclic voltammetry (CV) and square-wave voltammetry show that the cobalt and tungsten ions existed as Co2+ and W2+ on melts, respectively. The effect of applied voltage, electrolysis current, and electrolysis times on the composition of the product was studied. Results showed that pure cobalt powder can be obtained when the electrolysis potential is lower than 0.6 V or during low current and short times. Double-cathode and two-stage electrolysis was utilized for the preparation of cobalt, tungsten carbide, and tungsten powders. Additionally, X-ray diffraction results confirm that the product collected at cathodes 1 and 2 is pure Co and WC, respectively. Pure tungsten powder was obtained after electrolysis of the second part. Scanning electron microscope results show that the diameters of tungsten, tungsten carbide, and cobalt powder are smaller than 100, 200, and 200 nm, respectively.

  5. LIQUID PHASE SINTERING OF METALLIC CARBIDES

    DOEpatents

    Hammond, J.; Sease, J.D.

    1964-01-21

    An improved method is given for fabricating uranium carbide composites, The method comprises forming a homogeneous mixture of powdered uranium carbide, a uranium intermetallic compound which wets and forms a eutectic with said carbide and has a non-uranium component which has a relatively high vapor pressure at a temperature in the range 1200 to 1500 deg C, and an organic binder, pressing said mixture to a composite of desired green strength, and then vacuum sintering said composite at the eutectic forming temperature for a period sufficient to remove at least a portion of the non-uranium containing component of said eutectic. (AEC)

  6. Electrocatalysis using transition metal carbide and oxide nanocrystals

    NASA Astrophysics Data System (ADS)

    Regmi, Yagya N.

    Carbides are one of the several families of transition metal compounds that are considered economic alternatives to catalysts based on noble metals and their compounds. Phase pure transition metal carbides of group 4-6 metals, in the first three periods, were synthesized using a common eutectic salt flux synthesis method, and their electrocatalytic activities compared under uniform electrochemical conditions. Mo2C showed highest hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR) activities among the nine metal carbides investigated, but all other metal carbides also showed substantial activities. All the metal carbides showed remarkable enhancement in catalytic activities as supports, when compared to traditional graphitic carbon as platinum support. Mo2C, the most active transition metal carbide electrocatalyst, was prepared using four different synthesis routes, and the synthesis route dependent activities compared. Bifunctional Mo 2C that is HER as well as oxygen evolution reaction (OER) active, was achieved when the carbide was templated on a multiwalled carbon nanotube using carbothermic reduction method. Bimetallic carbides of Fe, Co, and Ni with Mo or W were prepared using a common carbothermic reduction method. Two different stoichiometries of bimetallic carbides were obtained for each system within a 60 °C temperature window. While the bimetallic carbides showed relatively lower electrocatalytic activities towards HER and ORR in comparison to Mo2C and WC, they revealed remarkably higher OER activities than IrO2 and RuO2, the state-of-the-art OER catalysts. Bimetallic oxides of Fe, Co, and Ni with Mo and W were also prepared using a hydrothermal synthesis method and they also revealed OER activities that are much higher than RuO2 and IrO2. Additionally, the OER activities were dependent on the degree and nature of hydration in the bimetallic oxide crystal lattice, with the completely hydrated, as synthesized, cobalt molybdate and nickel

  7. Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

    DOEpatents

    Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

    1985-05-06

    Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

  8. Deposition method for producing silicon carbide high-temperature semiconductors

    DOEpatents

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  9. Carbide fuels for nuclear thermal propulsion

    NASA Astrophysics Data System (ADS)

    Matthews, R. B.; Blair, H. T.; Chidester, K. M.; Davidson, K. V.; Stark, W. E.; Storms, E. K.

    1991-09-01

    A renewed interest in manned exploration of space has revitalized interest in the potential for advancing nuclear rocket technology developed during the 1960's. Carbide fuel performance, melting point, stability, fabricability and compatibility are key technology issues for advanced Nuclear Thermal Propulsion reactors. The Rover fuels development ended with proven carbide fuel forms with demonstrated operating temperatures up to 2700 K for over 100 minutes. The next generation of nuclear rockets will start where the Rover technology ended, but with a more rigorous set of operating requirements including operating lifetime to 10 hours, operating temperatures greater that 3000 K, low fission product release, and compatibility. A brief overview of Rover/NERVA carbide fuel development is presented. A new fuel form with the highest potential combination of operating temperature and lifetime is proposed that consists of a coated uranium carbide fuel sphere with built-in porosity to contain fission products. The particles are dispersed in a fiber reinforced ZrC matrix to increase thermal shock resistance.

  10. Abrasive slurry composition for machining boron carbide

    DOEpatents

    Duran, E.L.

    1984-11-29

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  11. Abrasive slurry composition for machining boron carbide

    DOEpatents

    Duran, Edward L.

    1985-01-01

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  12. Tungsten carbide encapsulated in nitrogen-doped carbon with iron/cobalt carbides electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Jie; Chen, Jinwei; Jiang, Yiwu; Zhou, Feilong; Wang, Gang; Wang, Ruilin

    2016-12-01

    This work presents a type of hybrid catalyst prepared through an environmental and simple method, combining a pyrolysis of transition metal precursors, a nitrogen-containing material, and a tungsten source to achieve a one-pot synthesis of N-doping carbon, tungsten carbides, and iron/cobalt carbides (Fe/Co/WC@NC). The obtained Fe/Co/WC@NC consists of uniform Fe3C and Co3C nanoparticles encapsulated in graphitized carbon with surface nitrogen doping, closely wrapped around a plate-like tungsten carbide (WC) that functions as an efficient oxygen reduction reaction (ORR) catalyst. The introduction of WC is found to promote the ORR activity of Fe/Co-based carbide electrocatalysts, which is attributed to the synergistic catalysts of WC, Fe3C, and Co3C. Results suggest that the composite exhibits comparable electrocatalytic activity, higher durability, and ability for methanol tolerance compared with commercial Pt/C for ORR in alkaline electrolyte. These advantages make Fe/Co/WC@NC a promising ORR electrocatalyst and a cost-effective alternative to Pt/C for practical application as fuel cell.

  13. Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Semaltianos, N. G., E-mail: nsemaltianos@yahoo.com; Friedt, J.-M.; Blondeau-Patissier, V.

    2016-05-28

    Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO{sub 2}) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter inmore » the range of 4.3–5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74–8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.« less

  14. Three-dimensional studies of intergranular carbides in austenitic stainless steel.

    PubMed

    Ochi, Minoru; Kawano, Rika; Maeda, Takuya; Sato, Yukio; Teranishi, Ryo; Hara, Toru; Kikuchi, Masao; Kaneko, Kenji

    2017-04-01

    A large number of morphological studies of intergranular carbides in steels have always been carried out in two dimensions without considering their dispersion manners. In this article, focused ion beam serial-sectioning tomography was carried out to study the correlation among the grain boundary characteristics, the morphologies and the dispersions of intergranular carbides in 347 austenitic stainless steel. More than hundred intergranular carbides were characterized in three dimensions and finally classified into three different types, two types of carbides probably semi-coherent to one of the neighboring grains with plate-type morphology, and one type of carbides incoherent to both grains with rod-type morphology. In addition, the rod-type carbide was found as the largest number of carbides among three types. Since large numbers of defects, such as misfit dislocations, may be present at the grain boundaries, which can be ideal nucleation sites for intergranular rod-type carbide precipitation. © The Author 2016. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved.For permissions, please e-mail: journals.permissions@oup.com.

  15. Silicon Carbide Capacitive High Temperature MEMS Strain Transducer

    DTIC Science & Technology

    2012-03-22

    SILICON CARBIDE CAPACITIVE HIGH TEMPURATURE MEMS STRAIN TRANSDUCER THESIS Richard P. Weisenberger, DR01, USAF AFIT/GE/ENG...declared a work of the U.S. Government and is not subject to copyright protection in the United States AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE...STATEMENT A. APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE IDGH TEMPURATURE MEMS STRAIN TRANSDUCER

  16. Characterization of boron carbide with an electron microprobe

    NASA Technical Reports Server (NTRS)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  17. Preparation and electrocatalytic activity of tungsten carbide and titania nanocomposite

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hu, Sujuan; Shi, Binbin; Yao, Guoxing

    2011-10-15

    Graphical abstract: The electrocatalytic activity of tungsten carbide and titania nanocomposite is related to the structure, crystal phase and chemical components of the nanocomposite, and is also affected by the property of electrolyte. A synergistic effect exists between tungsten carbide and titania of the composite. Highlights: {yields} Electrocatalytic activity of tungsten carbide and titania nanocomposite with core-shell structure. {yields} Activity is related to the structure, crystal phase and chemical component of the nanocomposite. {yields} The property of electrolyte affects the electrocatalytic activity. {yields} A synergistic effect exists between tungsten carbide and titania of the composite. -- Abstract: Tungsten carbide andmore » titania nanocomposite was prepared by combining a reduced-carbonized approach with a mechanochemical approach. The samples were characterized by X-ray diffraction, transmission electron microscope under scanning mode and X-ray energy dispersion spectrum. The results show that the crystal phases of the samples are composed of anatase, rutile, nonstoichiometry titanium oxide, monotungsten carbide, bitungsten carbide and nonstoichiometry tungsten carbide, and they can be controlled by adjusting the parameters of the reduced-carbonized approach; tungsten carbide particles decorate on the surface of titania support, the diameter of tungsten carbide particle is smaller than 20 nm and that of titania is around 100 nm; the chemical components of the samples are Ti, O, W and C. The electrocatalytic activity of the samples was measured by a cyclic voltammetry with three electrodes. The results indicate that the electrocatalytic activities of the samples are related to their crystal phases and the property of electrolyte in aqueous solution. A synergistic effect between titania and tungsten carbide is reported for the first time.« less

  18. Boron carbide nanowires: Synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  19. Tungsten carbide: Crystals by the ton

    NASA Astrophysics Data System (ADS)

    Smith, E. N.

    1988-06-01

    A comparison is made of the conventional process of making tungsten carbide by carburizing tungsten powder and the Macro Process wherein the tungsten carbide is formed directly from the ore concentrate by an exothermic reaction of ingredients causing a simultaneous reduction and carburization. Tons of tungsten monocarbide crystals are formed in a very rapid reaction. The process is unique in that it is self regulating and produces a tungsten carbide compound with the correct stoichiometry. The high purity with respect to oxygen and nitrogen is achieved because the reactions occur beneath the molten metal. The morphology and hardness of these crystals has been studied by various investigators and reported in the listed references.

  20. Fabrication of thorium bearing carbide fuels

    DOEpatents

    Gutierrez, Rueben L.; Herbst, Richard J.; Johnson, Karl W. R.

    1981-01-01

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750.degree. C. and 2000.degree. C. were used during the reduction cycle. Sintering temperatures of 1800.degree. C. and 2000.degree. C. were used to prepare fuel pellet densities of 87% and >94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproducibility of chemicals and phase composition. Methods employing liquid techniques that form carbide microspheres or alloying-techniques which form alloys of thorium-uranium or thorium-plutonium suffer from limitation on the quantities processed of because of criticality concerns and lack of precise control of process conditions, respectively.

  1. Manufacture of silicon carbide using solar energy

    DOEpatents

    Glatzmaier, Gregory C.

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  2. Mechanical Testing of Silicon Carbide on MISSE-7

    DTIC Science & Technology

    2012-07-15

    JS) ii Abstract Silicon carbide ( SiC ) mechanical test specimens were included on the second Optical and Reflector Materials Experiment (ORMatE II...2. Vendor 2 EFS Weibull Results (normalized to Extra Disks Weibull parameters) 12 1. Introduction Silicon carbide ( SiC ) mechanical test...AEROSPACE REPORT NO ATR-2012(8921)-5 Mechanical Testing of Silicon Carbide on MISSE-7 Jul> 15. 2012 David B. Witkin Space Materials Laboratory

  3. Titanium Carbide Bipolar Plate for Electrochemical Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    LaConti, Anthony B.; Griffith, Arthur E.; Cropley, Cecelia C.

    Titanium carbide comprises a corrosion resistant, electrically conductive, non-porous bipolar plate for use in an electrochemical device. The process involves blending titanium carbide powder with a suitable binder material, and molding the mixture, at an elevated temperature and pressure.

  4. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  5. Tribology of carbide derived carbon films synthesized on tungsten carbide

    NASA Astrophysics Data System (ADS)

    Tlustochowicz, Marcin

    Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

  6. Process for making silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    1998-01-01

    A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  7. Hybrid nuclear reactor grey rod to obtain required reactivity worth

    DOEpatents

    Miller, John V.; Carlson, William R.; Yarbrough, Michael B.

    1991-01-01

    Hybrid nuclear reactor grey rods are described, wherein geometric combinations of relatively weak neutron absorber materials such as stainless steel, zirconium or INCONEL, and relatively strong neutron absorber materials, such as hafnium, silver-indium cadmium and boron carbide, are used to obtain the reactivity worths required to reach zero boron change load follow. One embodiment includes a grey rod which has combinations of weak and strong neutron absorber pellets in a stainless steel cladding. The respective pellets can be of differing heights. A second embodiment includes a grey rod with a relatively thick stainless steel cladding receiving relatively strong neutron absorber pellets only. A third embodiment includes annular relatively weak netron absorber pellets with a smaller diameter pellet of relatively strong absorber material contained within the aperture of each relatively weak absorber pellet. The fourth embodiment includes pellets made of a homogeneous alloy of hafnium and a relatively weak absorber material, with the percentage of hafnium chosen to obtain the desired reactivity worth.

  8. Titanium carbide bipolar plate for electrochemical devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    LaConti, Anthony B.; Griffith, Arthur E.; Cropley, Cecelia C.

    A corrosion resistant, electrically conductive, non-porous bipolar plate is made from titanium carbide for use in an eletrochemical device. The process involves blending titanium carbide powder with a suitable binder material, and molding the mixture, at an elevated temperature and pressure.

  9. Natural precursor based hydrothermal synthesis of sodium carbide for reactor applications

    NASA Astrophysics Data System (ADS)

    Swapna, M. S.; Saritha Devi, H. V.; Sebastian, Riya; Ambadas, G.; Sankararaman, S.

    2017-12-01

    Carbides are a class of materials with high mechanical strength and refractory nature which finds a wide range of applications in industries and nuclear reactors. The existing synthesis methods of all types of carbides have problems in terms of use of toxic chemical precursors, high-cost, etc. Sodium carbide (Na2C2) which is an alkali metal carbide is the least explored one and also that there is no report of low-cost and low-temperature synthesis of sodium carbide using the eco-friendly, easily available natural precursors. In the present work, we report a simple low-cost, non-toxic hydrothermal synthesis of refractory sodium carbide using the natural precursor—Pandanus. The formation of sodium carbide along with boron carbide is evidenced by the structural and morphological characterizations. The sample thus synthesized is subjected to field emission scanning electron microscopy (FESEM), x-ray powder diffraction (XRD), ultraviolet (UV)—visible spectroscopy, Fourier transform infrared spectroscopy (FTIR), Raman, and photoluminescent (PL) spectroscopic techniques.

  10. New Polymeric Precursors of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Litt, M.; Kumar, K.

    1987-01-01

    Silicon carbide made by pyrolizing polymers. Method conceived for preparation of poly(decamethylcyclohexasilanes) as precursors for preparation of silicon carbide at high yield. Technical potential of polysilanes as precursors of SiC ceramics being explored. Potential limited by intractability of some polysilanes; formation of small, cyclic polycarbosilane fragments during pyrolysis; and overall low char yield and large shrinkage in conversion to ceramics.

  11. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  12. Joining of porous silicon carbide bodies

    DOEpatents

    Bates, Carl H.; Couhig, John T.; Pelletier, Paul J.

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  13. Plasma Enabled Fabrication of Silicon Carbide Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya (Ken)

    Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

  14. Creep behavior of uranium carbide-based alloys

    NASA Technical Reports Server (NTRS)

    Seltzer, M. S.; Wright, T. R.; Moak, D. P.

    1975-01-01

    The present work gives the results of experiments on the influence of zirconium carbide and tungsten on the creep properties of uranium carbide. The creep behavior of high-density UC samples follows the classical time-dependence pattern of (1) an instantaneous deformation, (2) a primary creep region, and (3) a period of steady-state creep. Creep rates for unalloyed UC-1.01 and UC-1.05 are several orders of magnitude greater than those measured for carbide alloys containing a Zr-C and/or W dispersoid. The difference in creep strength between alloyed and unalloyed materials varies with temperature and applied stress.

  15. Electroextraction of boron from boron carbide scrap

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jain, Ashish; Anthonysamy, S., E-mail: sas@igcar.gov.in; Ghosh, C.

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction processmore » developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.« less

  16. Magneto-Resistance in thin film boron carbides

    NASA Astrophysics Data System (ADS)

    Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

    2013-03-01

    Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

  17. Nanocrystalline ordered vanadium carbide: Superlattice and nanostructure

    NASA Astrophysics Data System (ADS)

    Kurlov, A. S.; Gusev, A. I.; Gerasimov, E. Yu.; Bobrikov, I. A.; Balagurov, A. M.; Rempel, A. A.

    2016-02-01

    The crystal structure, micro- and nanostructure of coarse- and nanocrystalline powders of ordered vanadium carbide V8C7 have been examined by X-ray and neutron diffraction and electron microscopy methods. The synthesized coarse-crystalline powder of ordered vanadium carbide has flower-like morphology. It was established that the real ordered phase has the composition V8C7-δ (δ ≅ 0.03) deviating from perfect stoichiometric composition V8C7. The vanadium atoms forming the octahedral environment □V6 of vacant sites in V8C7-δ are displaced towards the vacancy □. The presence of carbon onion-like structures was found in the vanadium carbide powders with a small content of free (uncombined) carbon. The nanopowders of V8C7-δ carbide with average particle size of 20-30 nm produced by high-energy milling of coarse-crystalline powder retain the crystal structure of the initial powder, but differ in the lattice deformation distortion anisotropy.

  18. Salt flux synthesis of single and bimetallic carbide nanowires

    NASA Astrophysics Data System (ADS)

    Leonard, Brian M.; Waetzig, Gregory R.; Clouser, Dale A.; Schmuecker, Samantha M.; Harris, Daniel P.; Stacy, John M.; Duffee, Kyle D.; Wan, Cheng

    2016-07-01

    Metal carbide compounds have a broad range of interesting properties and are some of the hardest and highest melting point compounds known. However, their high melting points force very high reaction temperatures and thus limit the formation of high surface area nanomaterials. To avoid the extreme synthesis temperatures commonly associated with these materials, a new salt flux technique has been employed to reduce reaction temperatures and form these materials in the nanometer regime. Additionally, the use of multiwall carbon nanotubes as a reactant further reduces the diffusion distance and provides a template for the final carbide materials. The metal carbide compounds produced through this low temperature salt flux technique maintain the nanowire morphology of the carbon nanotubes but increase in size to ˜15-20 nm diameter due to the incorporation of metal in the carbon lattice. These nano-carbides not only have nanowire like shape but also have much higher surface areas than traditionally prepared metal carbides. Finally, bimetallic carbides with composition control can be produced with this method by simply using two metal precursors in the reaction. This method provides the ability to produce nano sized metal carbide materials with size, morphology, and composition control and will allow for these compounds to be synthesized and studied in a whole new size and temperature regime.

  19. A silicon carbide array for electrocorticography and peripheral nerve recording.

    PubMed

    Diaz-Botia, C A; Luna, L E; Neely, R M; Chamanzar, M; Carraro, C; Carmena, J M; Sabes, P N; Maboudian, R; Maharbiz, M M

    2017-10-01

    Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

  20. A silicon carbide array for electrocorticography and peripheral nerve recording

    NASA Astrophysics Data System (ADS)

    Diaz-Botia, C. A.; Luna, L. E.; Neely, R. M.; Chamanzar, M.; Carraro, C.; Carmena, J. M.; Sabes, P. N.; Maboudian, R.; Maharbiz, M. M.

    2017-10-01

    Objective. Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. Approach. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. Main results. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Significance. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

  1. Chemical state of fission products in irradiated uranium carbide fuel

    NASA Astrophysics Data System (ADS)

    Arai, Yasuo; Iwai, Takashi; Ohmichi, Toshihiko

    1987-12-01

    The chemical state of fission products in irradiated uranium carbide fuel has been estimated by equilibrium calculation using the SOLGASMIX-PV program. Solid state fission products are distributed to the fuel matrix, ternary compounds, carbides of fission products and intermetallic compounds among the condensed phases appearing in the irradiated uranium carbide fuel. The chemical forms are influenced by burnup as well as stoichiometry of the fuel. The results of the present study almost agree with the experimental ones reported for burnup simulated carbides.

  2. Chemical-Vapor Deposition Of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Cagliostro, D. E.; Riccitiello, S. R.; Ren, J.; Zaghi, F.

    1993-01-01

    Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

  3. Hafnium, Tungsten, and the Differentiation of the Moon and Mars

    NASA Astrophysics Data System (ADS)

    Taylor, G. J.

    2003-11-01

    Measurements of the isotopic composition of tungsten (W) show that lunar samples and Martian meteorites have an excess of W-182. This was produced by the decay of hafnium-182 (Hf-182), an isotope with a half-life of only 9 million years. Because tungsten dissolves enthusiastically in metallic iron and hafnium does not, it is possible to use the abundance of W-182 in rocks formed by melting of the silicate mantle as an indicator of the timing of core formation. However, the concentrations of Hf and W in rocky material can be affected by melting and crystallization, so we also need to know how each element concentrates in common minerals in the mantles of the Moon and Mars. The behavior of Hf has been studied experimentally, but this is not true of W. Kevin Righter (Johnson Space Center) and Charles (Chip) Shearer (University of New Mexico) have filled this knowledge void by determining how W partitions between olivine, high- and low-calcium pyroxene, plagioclase feldspar, and garnet. The new data allowed Righter and Shearer to reexamine available measurements of the isotopic composition of W in lunar samples and Martian meteorites. Their analysis suggests that the lunar magma ocean, a huge magma system that surrounded the Moon when it formed, solidified in less than 30 million years. This is shorter than many theoretical calculations suggest. Pathfinder data and chemical data from Martian meteorites suggest that the core of Mars makes up about 20% of the planet. Core formation and subsequent melting of a region of the mantle containing garnet and high-calcium pyroxene took place less than 20-30 million years after the formation of the first solids in the solar system. This type of research shows the importance of measurements of isotopic compositions of radioactive elements or their decay products and laboratory experiments on the geochemical behavior of those elements.

  4. Diamond-silicon carbide composite

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  5. Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xia, Min; Guo, Hongyan; Ge, Changchun

    2014-05-14

    A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (α-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, α-CNTs/amorphous tungsten carbide, α-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

  6. Modified silicon carbide whiskers

    DOEpatents

    Tiegs, Terry N.; Lindemer, Terrence B.

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  7. Modified silicon carbide whiskers

    DOEpatents

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  8. Researches on tungsten carbide

    NASA Astrophysics Data System (ADS)

    1994-11-01

    This paper summarizes results of the researches on tungsten carbide (WC), carried out in the 5-year period starting 1989 by the Science and Technology Agency's National Institute for Researches in Inorganic Materials. The high-frequency heating, floating zone technique, generally suited for growth of large-size, single crystals of high melting materials, is inapplicable to the hexagonal WC system, which is decomposed. This problem has been solved by adding boron to the system, to allow it to exist with the W-C-B melt at an equilibrium. The computer-aided control techniques have enabled automatic growth of the single crystals of carbides and borides. The de Haas-Van Alphen effect of the single WC crystals has been observed, to establish the Fermi surface model. The single crystals of transition metal carbides, such as WC, have been coated with the monolayer of graphite at high repeatability, to create the surface layer materials. An attempt has been done to produce the halite type structure by substituting Ti as the atom in the outermost layer of TiC by W. The new method, based on the low-speed deuterium ion scattering, has been developed to analyze the surface bonding conditions, clarifying the conditions of alkalis adsorbed on and bonded to metallic surfaces, and their surface reactivities.

  9. Study of bulk Hafnium oxide (HfO2) under compression

    NASA Astrophysics Data System (ADS)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  10. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    NASA Technical Reports Server (NTRS)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  11. Development and Performance of Boron Carbide-Based Smoke Compositions

    DTIC Science & Technology

    2013-03-06

    DOI: 10.1002/prep.201200166 Development and Performance of Boron Carbide -Based Smoke Compositions Anthony P. Shaw,*[a] Jay C. Poret,[a] Robert A...volatilized and recondense to give smoke. Boron carbide was recognized as a pyrotechnic fuel many years ago, but it has since been overlooked. A 1961...Abstract : Pyrotechnic smoke compositions for visual ob- scuration containing boron carbide , potassium nitrate, po- tassium chloride, and various lubricants

  12. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  13. Friction and wear behavior of single-crystal silicon carbide in contact with titanium

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

  14. XPS, AES and friction studies of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1982-01-01

    The surface chemistry and friction behavior of a single crystal silicon carbide surface parallel to the 0001 plane in sliding contact with iron at various temperatures to 1500 C in a vacuum of 3 x 10 nPa are investigated using X-ray photoelectron and Auger electron spectroscopy. Results show that graphite and carbide-type carbon are seen primarily on the silicon carbide surface in addition to silicon at temperatures to 800 C by both types of spectroscopy. The coefficients of friction for iron sliding against a silicon carbide surface parallel to the 0001 plane surface are found to be high at temperatures up to 800 C, with the silicon and carbide-type carbon at maximum intensity in the X-ray photoelectron spectroscopy at 800 C. The concentration of the graphite increases rapidly on the surface as the temperature is increased above 800 C, while the concentrations of the carbide-type carbon and silicon decrease rapidly and this presence of graphite is accompanied by a significant decrease in friction. Preheating the surfaces to 1500 C also gives dramatically lower coefficients of friction when reheating in the sliding temperature range of from room temperature to 1200 C, with this reduction in friction due to the graphite layer on the silicon carbide surface.

  15. Process for preparing metal-carbide-containing microspheres from metal-loaded resin beads

    DOEpatents

    Beatty, Ronald L.

    1976-01-01

    An improved method for treating metal-loaded resin microspheres is described which comprises heating a metal-loaded resin charge in an inert atmosphere at a pre-carbide-forming temperature under such conditions as to produce a microsphere composition having sufficient carbon as to create a substantially continuous carbon matrix and a metal-carbide or an oxide-carbide mixture as a dispersed phase(s) during carbide-forming conditions, and then heating the thus treated charge to a carbide-forming temperature.

  16. Tribological properties of silicon carbide in metal removal process

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Material properties are considered as they relate to adhesion, friction, and wear of single crystal silicon carbide in contact with metals and alloys that are likely to be involved in a metal removal process such as grinding. Metal removal from adhesion between sliding surfaces in contact and metal removal as a result of the silicon carbide sliding against a metal, indenting into it, and plowing a series of grooves or furrows are discussed. Fracture and deformation characteristics of the silicon carbide surface are also covered. The adhesion, friction, and metal transfer to silicon carbide is related to the relative chemical activity of the metals. The more active the metal, the higher the adhesion and friction, and the greater the metal transfer to silicon carbide. Atomic size and content of alloying elements play a dominant role in controlling adhesion, friction, and abrasive wear properties of alloys. The friction and abrasive wear (metal removal) decrease linearly as the shear strength of the bulk metal increases. They decrease as the solute to solvent atomic radius ratio increases or decreases linearly from unity, and with an increase of solute content. The surface fracture of silicon carbide is due to cleavages of 0001, 10(-1)0, and/or 11(-2)0 planes.

  17. Iron Carbides in Fischer–Tropsch Synthesis: Theoretical and Experimental Understanding in Epsilon-Iron Carbide Phase Assignment

    DOE PAGES

    Liu, Xing-Wu; Cao, Zhi; Zhao, Shu; ...

    2017-09-11

    As active phases in low-temperature Fischer–Tropsch synthesis for liquid fuel production, epsilon iron carbides are critically important industrial materials. However, the precise atomic structure of epsilon iron carbides remains unclear, leading to a half-century of debate on the phase assignment of the ε-Fe 2C and ε’-Fe 2.2C. Here, we resolve this decades-long question by a combining theoretical and experimental investigation to assign the phases unambiguously. First, we have investigated the equilibrium structures and thermal stabilities of ε-Fe xC, (x = 1, 2, 2.2, 3, 4, 6, 8) by first-principles calculations. We have also acquired X-ray diffraction patterns and Mössbauer spectramore » for these epsilon iron carbides, and compared them with the simulated results. These analyses indicate that the unit cell of ε-Fe 2C contains only one type of chemical environment for Fe atoms, while ε’-Fe 2.2C has six sets of chemically distinct Fe atoms.« less

  18. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  19. Silicon Carbide Metallization

    NASA Astrophysics Data System (ADS)

    Lescoat, F.; Tanguy, F.; Durand, P.

    2016-05-01

    A study has been done to assess the feasibility of metallization of Silicon Carbide (SiC) in order to simplify design and mounting of one or more ground reference rail needed to provide an electrical reference for electronics mounted on an SiC structure.

  20. Investigation to develop a method to apply diffusion barrier to high strength fibers

    NASA Technical Reports Server (NTRS)

    Veltri, R. D.; Paradis, R. D.; Douglas, F. C.

    1975-01-01

    A radio frequency powered ion plating process was used to apply the diffusion barriers of aluminum oxide, yttrium oxide, hafnium oxide and titanium carbide to a substrate tungsten fiber. Each of the coatings was examined as to its effect on both room temperature strength and tensile strength of the base tungsten fiber. The coated fibers were then overcoated with a nickel alloy to become single cell diffusion couples. These diffusion couples were exposed to 1093 C for 24 hours, cycled between room temperature and 1093 C, and given a thermal anneal for 100 hours at 1200 C. Tensile testing and metallographic examinations determined that the hafnium oxide coating produced the best high temperature diffusion barrier for tungsten of the four coatings.

  1. Fabrication of thorium bearing carbide fuels

    DOEpatents

    Gutierrez, R.L.; Herbst, R.J.; Johnson, K.W.R.

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750/sup 0/C and 2000/sup 0/C were used during the reduction cycle. Sintering temperatures of 1800/sup 0/C and 2000/sup 0/C were used to prepare fuel pellet densities of 87% and > 94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproductibility of chemical and phase composition.

  2. Varying potential silicon carbide gas sensor

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B. (Inventor); Ryan, Margaret A. (Inventor); Williams, Roger M. (Inventor)

    1997-01-01

    A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

  3. Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

    2016-07-11

    The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

  4. Chemical vapour deposition: Transition metal carbides go 2D

    DOE PAGES

    Gogotsi, Yury

    2015-08-17

    Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties 1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family 3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity 4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour depositionmore » with a high crystallinity and very low defect concentration.« less

  5. Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

    PubMed

    Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

    2018-02-07

    Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Hugoniot equation of state and dynamic strength of boron carbide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Grady, Dennis E.

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Losmore » Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  7. METHOD FOR COATING GRAPHITE WITH METALLIC CARBIDES

    DOEpatents

    Steinberg, M.A.

    1960-03-22

    A method for producing refractory coatings of metallic carbides on graphite was developed. In particular, the graphite piece to be coated is immersed in a molten solution of 4 to 5% by weight of zirconium, titanium, or niobium dissolved in tin. The solution is heated in an argon atmosphere to above 1400 deg C, whereby the refractory metal reacts with the surface of the graphite to form a layer of metalic carbide. The molten solution is cooled to 300 to 400 deg C, and the graphite piece is removed. Excess tin is wiped from the graphite, which is then heated in vacuum to above 2300 deg C. The tin vaporizes from the graphite surface, leaving the surface coated with a tenacious layer of refractory metallic carbide.

  8. Carbide factor predicts rolling-element bearing fatigue life

    NASA Technical Reports Server (NTRS)

    Chevalier, J. L.; Zaretsky, E. V.

    1973-01-01

    Analysis was made to determine correlation between number and size of carbide particles and rolling-element fatigue. Correlation was established, and carbide factor was derived that can be used to predict fatigue life more effectively than such variables as heat treatment, chemical composition, and hardening mechanism.

  9. Method for making hot-pressed fiber-reinforced carbide-graphite composite

    DOEpatents

    Riley, Robert E.; Wallace Sr., Terry C.

    1979-01-01

    A method for the chemical vapor deposition of a uniform coating of tantalum metal on fibers of a woven graphite cloth is described. Several layers of the coated cloth are hot pressed to produce a tantalum carbide-graphite composite having a uniformly dispersed, fine grained tantalum carbide in graphite with compositions in the range of 15 to 40 volume percent tantalum carbide.

  10. Flexural strength of proof-tested and neutron-irradiated silicon carbide

    NASA Astrophysics Data System (ADS)

    Price, R. J.; Hopkins, G. R.

    1982-08-01

    Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

  11. MC Carbide Characterization in High Refractory Content Powder-Processed Ni-Based Superalloys

    NASA Astrophysics Data System (ADS)

    Antonov, Stoichko; Chen, Wei; Huo, Jiajie; Feng, Qiang; Isheim, Dieter; Seidman, David N.; Sun, Eugene; Tin, Sammy

    2018-04-01

    Carbide precipitates in Ni-based superalloys are considered to be desirable phases that can contribute to improving high-temperature properties as well as aid in microstructural refinement of the material; however, they can also serve as crack initiation sites during fatigue. To date, most of the knowledge pertaining to carbide formation has originated from assessments of cast and wrought Ni-based superalloys. As powder-processed Ni-based superalloys are becoming increasingly widespread, understanding the different mechanisms by which they form becomes increasingly important. Detailed characterization of MC carbides present in two experimental high Nb-content powder-processed Ni-based superalloys revealed that Hf additions affect the resultant carbide morphologies. This morphology difference was attributed to a higher magnitude of elastic strain energy along the interface associated with Hf being soluble in the MC carbide lattice. The composition of the MC carbides was studied through atom probe tomography and consisted of a complex carbonitride core, which was rich in Nb and with slight Hf segregation, surrounded by an Nb carbide shell. The characterization results of the segregation behavior of Hf in the MC carbides and the subsequent influence on their morphology were compared to density functional theory calculations and found to be in good agreement, suggesting that computational modeling can successfully be used to tailor carbide features.

  12. MC Carbide Characterization in High Refractory Content Powder-Processed Ni-Based Superalloys

    NASA Astrophysics Data System (ADS)

    Antonov, Stoichko; Chen, Wei; Huo, Jiajie; Feng, Qiang; Isheim, Dieter; Seidman, David N.; Sun, Eugene; Tin, Sammy

    2018-06-01

    Carbide precipitates in Ni-based superalloys are considered to be desirable phases that can contribute to improving high-temperature properties as well as aid in microstructural refinement of the material; however, they can also serve as crack initiation sites during fatigue. To date, most of the knowledge pertaining to carbide formation has originated from assessments of cast and wrought Ni-based superalloys. As powder-processed Ni-based superalloys are becoming increasingly widespread, understanding the different mechanisms by which they form becomes increasingly important. Detailed characterization of MC carbides present in two experimental high Nb-content powder-processed Ni-based superalloys revealed that Hf additions affect the resultant carbide morphologies. This morphology difference was attributed to a higher magnitude of elastic strain energy along the interface associated with Hf being soluble in the MC carbide lattice. The composition of the MC carbides was studied through atom probe tomography and consisted of a complex carbonitride core, which was rich in Nb and with slight Hf segregation, surrounded by an Nb carbide shell. The characterization results of the segregation behavior of Hf in the MC carbides and the subsequent influence on their morphology were compared to density functional theory calculations and found to be in good agreement, suggesting that computational modeling can successfully be used to tailor carbide features.

  13. Versatile Boron Carbide-Based Visual Obscurant Compositions for Smoke Munitions

    DTIC Science & Technology

    2015-04-17

    Versatile Boron Carbide-Based Visual Obscurant Compositions for Smoke Munitions Anthony P. Shaw,*,† Giancarlo Diviacchi,‡ Ernest L. Black,‡ Jared D...have been demonstrated to produce thick white smoke clouds upon combustion. These compositions use powdered boron carbide (B4C) as a pyrotechnic...ignition and are safe to handle. KEYWORDS: Smoke, Obscurants, Pyrotechnics, Boron carbide, Sustainable chemistry ■ INTRODUCTION Visible obscuration

  14. New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

    NASA Astrophysics Data System (ADS)

    Guron, Marta

    (methylcarbosilane) converted into boron-carbide/silicon-carbide ceramics with high char yields. These polymer blends were also shown to be useful as reagents for synthesis of hafnium-boride/hafnium-carbide/silicon carbide and zirconium-boride/zirconium-carbide/silicon carbide composites.

  15. Plasma metallurgical production of nanocrystalline borides and carbides

    NASA Astrophysics Data System (ADS)

    Galevsky, G. V.; Rudneva, V. V.; Cherepanov, A. N.; Galevsky, S. G.; Efimova, K. A.

    2016-09-01

    he experience in production and study of properties of nanocrystalline borides and chromium carbides, titanium, silicon was summarized. The design and features of the vertical three-jet once-through reactor with power 150 kW, used in the plasma metallurgical production, was described. The technological, thermotechnical and resource characteristics of the reactor were identified. The parameters of borides and carbides synthesis, their main characteristics in the nanodispersed state and equipment-technological scheme of production were provided. Evaluation of engineering-and-economical performance of the laboratory and industrial levels of borides and carbides production and the state corresponding to the segment of the world market was carried out.

  16. On carbide dissolution in an as-cast ASTM F-75 alloy.

    PubMed

    Caudillo, M; Herrera-Trejo, M; Castro, M R; Ramírez, E; González, C R; Juárez, J I

    2002-02-01

    The solution treatment of an as-cast ASTM F-75 alloy was investigated. Microstructural evolution was followed during thermal processing, in particular with regard to the content and type of carbides formed. To evidence any probable carbide transformations occurring during the heating stage, as well as to clarify their effect on the carbide dissolution kinetics, three heating rates were studied. Image analysis and scanning electron microscopy techniques were used for microstructural characterization. For the identification of precipitates, these were electrolytically extracted from the matrix and then analyzed by X-ray diffraction. It was found that the precipitates in the as-cast alloy were constituted by both a M(23)C(6) carbide and a sigma intermetallic phase. The M(23)C(6) carbide was the only phase identified in solution-treated specimens, regardless of the heating rate employed, which indicated that this carbide dissolved directly into the matrix without being transformed first into an M(6)C carbide, as reported in the literature. It was found that the kinetics of dissolution for the M(23)C(6) carbide decreased progressively during the solution treatment, and that it was sensitive to the heating rate, decreasing whenever the latter was decreased. Because the M(23)C(6) carbide was not observed to suffer a phase transformation prior to its dissolution into the matrix, the effect of the heating rate was associated to the morphological change occurred as the specimens were heated. The occurrence of the observed phases was analyzed with the aid of phase diagrams computed for the system Co-Cr-Mo-C. Copyright 2001 John Wiley & Sons, Inc. J Biomed Mater Res 59: 378-385, 2002

  17. Thermal conductivity behavior of boron carbides

    NASA Technical Reports Server (NTRS)

    Wood, C.; Zoltan, A.; Emin, D.; Gray, P. E.

    1983-01-01

    Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

  18. Chemical and structural characterization of boron carbide powders and ceramics

    NASA Astrophysics Data System (ADS)

    Kuwelkar, Kanak Anant

    Boron carbide is the material of choice for lightweight armor applications due to its extreme hardness, high Young's modulus and low specific weight. The homogeneity range in boron carbide extends from 9 to 20 at% carbon with the solubility limits not uniquely defined in literature. Over the homogeneity range, the exact lattice positions of boron and carbon atoms have not been unambiguously established, and this topic has been the consideration of significant debate over the last 60 years. The atomic configuration and positions of the boron and carbon atoms play a key role in the crystal structure of the boron carbide phases. Depending on the atomic structure, boron carbide exhibits different mechanical properties which may alter its ballistic performance under extreme dynamic conditions. This work focusses on refinement and development of analytical and chemical methods for an accurate determination of the boron carbide stoichiometry. These methods were then utilized to link structural changes of boron carbide across the solubility range to variations in mechanical properties. After an extensive assessment of the currently employed characterization techniques, it was discerned that the largest source of uncertainty in the determination of the boron carbide stoichiometry was found to arise from the method utilized to evaluate the free carbon concentration. To this end, a modified spiking technique was introduced for free carbon determination where curve fitting techniques were employed to model the asymmetry of the 002 free carbon diffraction peak based on the amorphous, disordered and graphitic nature of carbon. A relationship was then established between the relative intensities of the carbon and boron carbide peaks to the percentage of added carbon and the free-carbon content was obtained by extrapolation. Samples with varying chemistry and high purity were synthesized across the solubility range by hot pressing mixtures of amorphous boron and boron carbide

  19. 40 CFR 415.30 - Applicability; description of the calcium carbide production subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... calcium carbide production subcategory. 415.30 Section 415.30 Protection of Environment ENVIRONMENTAL... SOURCE CATEGORY Calcium Carbide Production Subcategory § 415.30 Applicability; description of the calcium... the production of calcium carbide in uncovered furnaces. ...

  20. 40 CFR 415.30 - Applicability; description of the calcium carbide production subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... calcium carbide production subcategory. 415.30 Section 415.30 Protection of Environment ENVIRONMENTAL... SOURCE CATEGORY Calcium Carbide Production Subcategory § 415.30 Applicability; description of the calcium... the production of calcium carbide in uncovered furnaces. ...

  1. 40 CFR 415.30 - Applicability; description of the calcium carbide production subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... calcium carbide production subcategory. 415.30 Section 415.30 Protection of Environment ENVIRONMENTAL... SOURCE CATEGORY Calcium Carbide Production Subcategory § 415.30 Applicability; description of the calcium... the production of calcium carbide in uncovered furnaces. ...

  2. 40 CFR 415.30 - Applicability; description of the calcium carbide production subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... calcium carbide production subcategory. 415.30 Section 415.30 Protection of Environment ENVIRONMENTAL... SOURCE CATEGORY Calcium Carbide Production Subcategory § 415.30 Applicability; description of the calcium... the production of calcium carbide in uncovered furnaces. ...

  3. 40 CFR 415.30 - Applicability; description of the calcium carbide production subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... calcium carbide production subcategory. 415.30 Section 415.30 Protection of Environment ENVIRONMENTAL... SOURCE CATEGORY Calcium Carbide Production Subcategory § 415.30 Applicability; description of the calcium... the production of calcium carbide in uncovered furnaces. ...

  4. Feasibility study of fluxless brazing cemented carbides to steel

    NASA Astrophysics Data System (ADS)

    Tillmann, W.; Sievers, N.

    2017-03-01

    One of the most important brazing processes is the joints between cemented carbides and steel for the tool industry such as in rotary drill hammers or saw blades. Even though this technique has already been used for several decades, defects in the joint can still occur and lead to quality loss. Mostly, the joining process is facilitated by induction heating and the use of a flux to enhance the wetting of the filler alloy on the surface of the steel and cemented carbide in an ambient atmosphere. However, although the use of flux enables successful joining, it also generates voids within the joint, which reduces the strength of the connection while the chemicals within the flux are toxic and polluting. In this feasibility study, a fluxless brazing process is used to examine the joint between cemented carbides and steel for the first time. For this, ultrasound is applied during induction heating to enable the wetting between the liquid filler metal and the surfaces of the cemented carbide and steel. The ultrasound generates cavitations within the liquid filler metal, which remove the oxides from the surface. Several filler metals such as a silver based alloy Ag449, pure Zn, and an AlSi-alloy were used to reduce the brazing temperature and to lower the thermal residual stresses within the joint. As a result, every filler metal successfully wetted both materials and led to a dense connection. The ultrasound has to be applied carefully to prevent a damage of the cemented carbide. In this regard, it was observed that single grains of the cemented carbide broke out and remained in the joint. This positive result of brazing cemented carbides to steel without a flux but using ultrasound, allows future studies to focus on the shear strength of these joints as well as the behavior of the thermally induced residual stresses.

  5. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOEpatents

    Petrovic, John J.

    1995-01-01

    Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  6. Characterization of individual straight and kinked boron carbide nanowires

    NASA Astrophysics Data System (ADS)

    Cui, Zhiguang

    Boron carbides represent a class of ceramic materials with p-type semiconductor natures, complex structures and a wide homogeneous range of carbon compositions. Bulk boron carbides have long been projected as promising high temperature thermoelectric materials, but with limited performance. Bringing the bulk boron carbides to low dimensions (e.g., nanowires) is believed to be an option to enhance their thermoelectric performance because of the quantum size effects. However, the fundamental studies on the microstructure-thermal property relation of boron carbide nanowires are elusive. In this dissertation work, systematic structural characterization and thermal conductivity measurement of individual straight and kinked boron carbide nanowires were carried out to establish the true structure-thermal transport relation. In addition, a preliminary Raman spectroscopy study on identifying the defects in individual boron carbide nanowires was conducted. After the synthesis of single crystalline boron carbide nanowires, straight nanowires accompanied by the kinked ones were observed. Detailed structures of straight boron carbide nanowires have been reported, but not the kinked ones. After carefully examining tens of kinked nanowires utilizing Transmission Electron Microscopy (TEM), it was found that they could be categorized into five cases depending on the stacking faults orientations in the two arms of the kink: TF-TF, AF-TF, AF-AF, TF-IF and AF-IF kinks, in which TF, AF and IF denotes transverse faults (preferred growth direction perpendicular to the stacking fault planes), axial faults (preferred growth direction in parallel with the stacking fault planes) and inclined faults (preferred growth direction neither perpendicular to nor in parallel with the stacking fault planes). Simple structure models describing the characteristics of TF-TF, AF-TF, AF-AF kinked nanowires are constructed in SolidWorks, which help to differentiate the kinked nanowires viewed from the zone

  7. Silicon carbide, an emerging high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  8. Semiconducting boron carbide polymers devices for neutron detection

    NASA Astrophysics Data System (ADS)

    Echeverria, Elena; Pasquale, Frank L.; James, Robinson; Colón Santana, Juan A.; Adenwalla, Shireen; Kelber, Jeffry A.; Dowben, Peter A.

    2014-03-01

    Boron carbide materials, with aromatic compounds included, prove to be effective materials as solid state neutron detector detectors. The I-V characteristic curves for these heterojunction diodes with silicon show that these modified boron carbides, in the presence of these linking groups such as 1,4-diaminobenzene (DAB) and pyridine, are p-type. Cadmium was used as shield to discriminate between neutron-induced signals and thermal neutrons, and thermal neutron capture is evident, while gamma detection was not realized. Neutron detection signals for these heterojunction diode were observed, a measurable zero bias current noted, even without complete electron-hole collection. This again illustrates that boron carbide devices can be considered a neutron voltaic.

  9. Evaluation of titanium carbide metal matrix composites deposited via laser cladding

    NASA Astrophysics Data System (ADS)

    Cavanaugh, Daniel Thomas

    Metal matrix composites have been widely studied in terms of abrasion resistance, but a particular material system may behave differently as particle size, morphology, composition, and distribution of the hardening phase varies. The purpose of this thesis was to understand the mechanical and microstructural effects of combining titanium carbide with 431 series stainless steel to create a unique composite via laser cladding, particularly regarding wear properties. The most predominant effect in increasing abrasion resistance, measured via ASTM G65, was confirmed to be volume fraction of titanium carbide addition. Macrohardness was directly proportional to the amount of carbide, though there was an overall reduction in individual particle microhardness after cladding. The reduction in particle hardness was obscured by the effect of volume fraction carbide and did not substantially contribute to the wear resistance changes. A model evaluating effective mean free path of the titanium carbide particles was created and correlated to the measured data. The model proved successful in linking theoretical mean free path to overall abrasion resistance. The effects of the titanium carbide particle distributions were limited, while differences in particle size were noticeable. The mean free path model did not correlate well with the particle size, but it was shown that the fine carbides were completely removed by the coarse abrasive particles in the ASTM G65 test. The particle morphology showed indications of influencing the wear mode, but no statistical reduction was observed in the volume loss figures. Future studies may more specifically focus on particle morphology or compositional effects of the carbide particles.

  10. Size dependence of nanoscale wear of silicon carbide

    Treesearch

    Chaiyapat Tangpatjaroen; David Grierson; Steve Shannon; Joseph E. Jakes; Izabela Szlufarska

    2017-01-01

    Nanoscale, single-asperity wear of single-crystal silicon carbide (sc- SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native...

  11. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOEpatents

    Petrovic, J.J.

    1995-01-17

    Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  12. Dilatometry Analysis of Dissolution of Cr-Rich Carbides in Martensitic Stainless Steels

    NASA Astrophysics Data System (ADS)

    Huang, Qiuliang; Volkova, Olena; Biermann, Horst; Mola, Javad

    2017-12-01

    The dissolution of Cr-rich carbides formed in the martensitic constituent of a 13 pct Cr stainless steel was studied by dilatometry and correlative electron channeling contrast examinations. The dissolution of carbides subsequent to the martensite reversion to austenite was associated with a net volume expansion which in turn increased the dilatometry-based apparent coefficient of thermal expansion (CTEa) during continuous heating. The effects of carbides fraction and size on the CTEa variations during carbides dissolution are discussed.

  13. Carbide-reinforced metal matrix composite by direct metal deposition

    NASA Astrophysics Data System (ADS)

    Novichenko, D.; Thivillon, L.; Bertrand, Ph.; Smurov, I.

    Direct metal deposition (DMD) is an automated 3D laser cladding technology with co-axial powder injection for industrial applications. The actual objective is to demonstrate the possibility to produce metal matrix composite objects in a single-step process. Powders of Fe-based alloy (16NCD13) and titanium carbide (TiC) are premixed before cladding. Volume content of the carbide-reinforced phase is varied. Relationships between the main laser cladding parameters and the geometry of the built-up objects (single track, 2D coating) are discussed. On the base of parametric study, a laser cladding process map for the deposition of individual tracks was established. Microstructure and composition of the laser-fabricated metal matrix composite objects are examined. Two different types of structures: (a) with the presence of undissolved and (b) precipitated titanium carbides are observed. Mechanism of formation of diverse precipitated titanium carbides is studied.

  14. Development of refractory armored silicon carbide by infrared transient liquid phase processing

    NASA Astrophysics Data System (ADS)

    Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

    2005-12-01

    Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

  15. SOLID SOLUTION CARBIDES ARE THE KEY FUELS FOR FUTURE NUCLEAR THERMAL PROPULSION

    NASA Technical Reports Server (NTRS)

    Panda, Binayak; Hickman, Robert R.; Shah, Sandeep

    2005-01-01

    Nuclear thermal propulsion uses nuclear energy to directly heat a propellant (such as liquid hydrogen) to generate thrust for space transportation. In the 1960 s, the early Rover/Nuclear Engine for Rocket Propulsion Application (NERVA) program showed very encouraging test results for space nuclear propulsion but, in recent years, fuel research has been dismal. With NASA s renewed interest in long-term space exploration, fuel researchers are now revisiting the RoverMERVA findings, which indicated several problems with such fuels (such as erosion, chemical reaction of the fuel with propellant, fuel cracking, and cladding issues) that must be addressed. It is also well known that the higher the temperature reached by a propellant, the larger the thrust generated from the same weight of propellant. Better use of fuel and propellant requires development of fuels capable of reaching very high temperatures. Carbides have the highest melting points of any known material. Efforts are underway to develop carbide mixtures and solid solutions that contain uranium carbide, in order to achieve very high fuel temperatures. Binary solid solution carbides (U, Zr)C have proven to be very effective in this regard. Ternary carbides such as (U, Zr, X) carbides (where X represents Nb, Ta, W, and Hf) also hold great promise as fuel material, since the carbide mixtures in solid solution generate a very hard and tough compact material. This paper highlights past experience with early fuel materials and bi-carbides, technical problems associated with consolidation of the ingredients, and current techniques being developed to consolidate ternary carbides as fuel materials.

  16. High Temperature Oxidation-Resistant Thruster Research

    DTIC Science & Technology

    1990-02-01

    substrates: Refractory metals, ! Ceramics, Composites and I Carbon - carbon . Rhenium and hafnium carbide were selected based on their properties I and... carbon . Rhenium was selected as the primary refractory metal candidate because of its high melting point, no ductile-to- brittle transition in the...of rhenium (Re) with those of other refractory metals. Rhenium has the second highest melting point of the elements, 3013 C, second only to tungsten

  17. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  18. Silicon Carbide Etching Using Chlorine Trifluoride Gas

    NASA Astrophysics Data System (ADS)

    Habuka, Hitoshi; Oda, Satoko; Fukai, Yasushi; Fukae, Katsuya; Takeuchi, Takashi; Aihara, Masahiko

    2005-03-01

    The etch rate, chemical reactions and etched surface of β-silicon carbide are studied in detail using chlorine trifluoride gas. The etch rate is greater than 10 μm min-1 at 723 K with a flow rate of 0.1 \\ell min-1 at atmospheric pressure in a horizontal reactor. The maximum etch rate at a substrate temperature of 773 K is 40 μm min-1 with a flow rate of 0.25 \\ell min-1. The step-like pattern that initially exists on the β-silicon carbide surface tends to be smoothed; the root-mean-square surface roughness decreases from its initial value of 5 μm to 1 μm within 15 min; this minimum value is maintained for more than 15 min. Therefore, chlorine trifluoride gas is considered to have a large etch rate for β-silicon carbide associated with making a rough surface smooth.

  19. Pyroelectricity of silicon-doped hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  20. Method of forming impermeable carbide coats on graphite

    DOEpatents

    Wohlberg, C.

    1973-12-11

    A method of forming an impermeable refractory metal carbide coating on graphite is described in which a metal containing oxidant and a carbide former are applied to the surface of the graphite, heated to a temperature of between 1200 and 1500 deg C in an inert gas, under a vacuum and continuing to heat to about 2300 deg C. (Official Gazette)

  1. The development of silicon carbide-based power electronics devices

    NASA Astrophysics Data System (ADS)

    Hopkins, Richard H.; Perkins, John F.

    1995-01-01

    In 1989 Westinghouse created an internally funded initiative to develop silicon carbide materials and device technology for a variety of potential commercial and military applications. Westinghouse saw silicon carbide as having the potential for dual use. For space applications, size and weight reductions could be achieved, together with increased reliability. Terrestrially, uses in harsh-temperature environments would be enabled. Theoretically, the physical and electrical properties of silicon carbide were highly promising for high-power, high-temperature, radiation-hardened electronics. However, bulk material with the requisite electronic qualities was not available, and the methods needed to produce a silicon carbide wafer—to fabricate high-quality devices—and to transition these technologies into a commercial product were considered to be a high-risk investment. It was recognized that through a collaborative effort, the CCDS could provide scientific expertise in several areas, thus reducing this risk. These included modeling of structures, electrical contacts, dielectrics, and epitaxial growth. This collaboration has been very successful, with developed technologies being transferred to Westinghouse.

  2. Carbide derived carbon from MAX-phases and their separation applications

    NASA Astrophysics Data System (ADS)

    Hoffman, Elizabeth N.

    Improved sorbents with increased selectivity and permeability are needed to meet growing energy and environmental needs. New forms of carbon based sorbents have been discovered recently, including carbons produced by etching metals from metal carbides, known as carbide derived carbons (CDCs). A common method for the synthesis of CDC is by chlorination at elevated temperatures. The goal of this work is to synthesize CDC from ternary carbides and to explore the links between the initial carbide chemistry and structure with the resulting CDCs properties, including porosity. CDC was produced from MAX-phase carbides, in particular Ti3SiC 2, Ti3AlC2, Ti2AlC, and Ta2AlC. Additionally, CDC was produced from Ta-based binary carbides, TaC and Ta 2C, and one carbo-nitride Ti2AlC0.5N0.5. The CDC structure was characterized using XRD, Raman microspectroscopy, and HRTEM. Porosity characterization was performed using sorption analysis with both Ar and N2 as adsorbates. It was determined the microporosity of CDC is related to the density of the initial carbide. The layered structure of the MAX-phase carbides lent toward the formation of larger mesopores within the resulting CDCs, while the amount of mesopores was dependent on the chemistry of the carbide. Furthermore, CDC produced from carbides with extremely high theoretical porosity resulted in small specific surface areas due to a collapse of the carbon structure. To expand the potential applications for CDC beyond powder and bulk forms, CDC membranes were produced from a thin film of TiC deposited by magnetron sputtering onto porous ceramic substrates. The TiC thin film was subsequently chlorinated to produce a bilayer membrane with CDC as the active layer. Both gases and liquids are capable of passing the membrane. The membrane separates based on selective adsorption, rather than a size separation molecular sieving effect. Two applications for CDC produced from MAX-phases were investigated: protein adsorption and gas

  3. Zirconium and hafnium fractionation in differentiation of alkali carbonatite magmatic systems

    NASA Astrophysics Data System (ADS)

    Kogarko, L. N.

    2016-05-01

    Zirconium and hafnium are valuable strategic metals which are in high demand in industry. The Zr and Hf contents are elevated in the final products of magmatic differentiation of alkali carbonatite rocks in the Polar Siberia region (Guli Complex) and Ukraine (Chernigov Massif). Early pyroxene fractionation led to an increase in the Zr/Hf ratio in the evolution of the ultramafic-alkali magmatic system due to a higher distribution coefficient of Hf in pyroxene with respect to Zr. The Rayleigh equation was used to calculate a quantitative model of variation in the Zr/Hf ratio in the development of the Guli magmatic system. Alkali carbonatite rocks originated from rare element-rich mantle reservoirs, in particular, the metasomatized mantle. Carbonated mantle xenoliths are characterized by a high Zr/Hf ratio due to clinopyroxene development during metasomatic replacement of orthopyroxene by carbonate fluid melt.

  4. Whatever happened to silicon carbide. [semiconductor devices

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1981-01-01

    The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

  5. Single-Event Effects in Silicon Carbide Power Devices

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  6. Process for preparing fine-grain metal carbide powder

    DOEpatents

    Kennedy, C.R.; Jeffers, F.P.

    Fine-grain metal carbide powder suitable for use in the fabrication of heat resistant products is prepared by coating bituminous pitch on SiO/sub 2/ or Ta/sub 2/O/sub 5/ particles, heating the coated particles to convert the bituminous pitch to coke, and then heating the particles to a higher temperature to convert the particles to a carbide by reaction of said coke therewith.

  7. Thermal shock and erosion resistant tantalum carbide ceramic material

    NASA Technical Reports Server (NTRS)

    Honeycutt, L., III; Manning, C. R. (Inventor)

    1978-01-01

    Ceramic tantalum carbide artifacts with high thermal shock and mechanical erosion resistance are provided by incorporating tungsten-rhenium and carbon particles in a tantalum carbide matrix. The mix is sintered by hot pressing to form the ceramic article which has a high fracture strength relative to its elastic modulus and thus has an improved thermal shock and mechanical erosion resistance. The tantalum carbide is preferable less than minus 100 mesh, the carbon particles are preferable less than minus 100 mesh, and the tungsten-rhenium particles are preferable elongate, having a length to thickness ratio of at least 2/1. Tungsten-rhenium wire pieces are suitable as well as graphite particles.

  8. 64. INTERIOR VIEW OF THE CARBIDE COOLING SHED. VIEW IS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    64. INTERIOR VIEW OF THE CARBIDE COOLING SHED. VIEW IS SHOWING CALCIUM CARBIDE IN COOLING CARS ON THE FLOOR. DECEMBER 26, 1918. - United States Nitrate Plant No. 2, Reservation Road, Muscle Shoals, Muscle Shoals, Colbert County, AL

  9. Carbide coated fibers in graphite-aluminum composites

    NASA Technical Reports Server (NTRS)

    Imprescia, R. J.; Levinson, L. S.; Reiswig, R. D.; Wallace, T. C.; Williams, J. M.

    1975-01-01

    The NASA-supported program at the Los Alamos Scientific Laboratory (LASL) to develop carbon fiber-aluminum matrix composites is described. Chemical vapor deposition (CVD) was used to uniformly deposit thin, smooth, continuous coats of TiC on the fibers of graphite tows. Wet chemical coating of fibers, followed by high-temperature treatment, was also used, but showed little promise as an alternative coating method. Strength measurements on CVD coated fiber tows showed that thin carbide coats can add to fiber strength. The ability of aluminum alloys to wet TiC was successfully demonstrated using TiC-coated graphite surfaces. Pressure-infiltration of TiC- and ZrC-coated fiber tows with aluminum alloys was only partially successful. Experiments were performed to evaluate the effectiveness of carbide coats on carbon as barriers to prevent reaction between alluminum alloys and carbon. Initial results indicate that composites of aluminum and carbide-coated graphite are stable for long periods of time at temperatures near the alloy solidus.

  10. Experimental and first-principles studies on the elastic properties of α-hafnium metal under pressure

    DOE PAGES

    Qi, Xintong; Wang, Xuebing; Chen, Ting; ...

    2016-03-30

    Compressional and shear wave velocities of the α phase of hafnium have been measured up to 10.4 GPa at room temperature using ultrasonic interferometry in a multi-anvil apparatus. A finite strain equation of state analysis yielded K s0 = 110.4 (5) GPa, G 0 = 54.7(5) GPa,K s0' = 3.7 and G 0' = 0.6 for the elastic bulk and shear moduli and their pressure derivatives at ambient conditions. Complementary to the experimental data, the single crystal elastic constants, elastic anisotropy and the unit cell axial ratio c/a of α-hafnium at high pressures were investigated by Density Functional Theory (DFT)more » based first principles calculations. A c/a value of 1.605 is predicted for α-Hf at 40 GPa, which is in excellent agreement with previous experimental results. The low-pressure derivative of the shear modulus observed in our experimental data up to 10 GPa was found to originate from the elastic constant C44 which exhibits negligible pressure dependence within the current experimental pressure range. At higher pressures (>10 GPa), C 44 was predicted to soften and the shear wave velocity ν S trended to decrease with pressure, which can be interpreted as a precursor to the α-ω transition similar to that observed in other group IV elements (titanium and zirconium). Here, the acoustic velocities, bulk and shear moduli, and the acoustic Debye temperature (θ D = 240.1 K) determined from the current experiments were all compared well with those predicted by our theoretical DFT calculations.« less

  11. Some observations on uranium carbide alloy/tungsten compatibility

    NASA Technical Reports Server (NTRS)

    Phillips, W. M.

    1972-01-01

    Chemical compatibility between both pure and thoriated tungsten and uranium carbide alloys was studied at 1800 C for up to 3300 hours. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, dependent upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. The presence of a thermal gradient had no effect on the reactions observed nor did the presence of thoria in the tungsten clad.

  12. Some observations on uranium carbide alloy/tungsten compatibility.

    NASA Technical Reports Server (NTRS)

    Phillips, W. M.

    1972-01-01

    Results of chemical compatibility tests between both pure tungsten and thoriated tungsten run at 1800 C for up to 3300 hours with uranium carbide alloys. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, depending upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. Neither the presence of a thermal gradient nor the presence of thoria in the tungsten clad affect the reactions observed.

  13. Stress-rupture strength and microstructural stability of tungsten-hafnium-carbon-wire reinforced superalloy composites

    NASA Technical Reports Server (NTRS)

    Petrasek, D. W.; Signorelli, R. A.

    1974-01-01

    Tungsten-hafnium-carbon - superalloy composites were found to be potentially useful for turbine blade applications on the basis of stress-rupture strength. The 100- and 1000-hr rupture strengths calculated for 70 vol. % fiber composites based on test data at 1090C (2000F) were 420 and 280 MN/m2 (61,000 and 41,000 psi, respectively). The investigation indicated that, with better quality fibers, composites having 100- and 1000-hr rupture strengths of 570 and 370 MN/m2 (82,000 and 54,000 psi, respectively), may be obtained. Metallographic studies indicated sufficient fiber-matrix compatibility for 1000 hr or more at 1090C (2000F).

  14. Converting a carbon preform object to a silicon carbide object

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  15. 40 CFR 424.50 - Applicability; description of the other calcium carbide furnaces subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... calcium carbide furnaces subcategory. 424.50 Section 424.50 Protection of Environment ENVIRONMENTAL... CATEGORY Other Calcium Carbide Furnaces Subcategory § 424.50 Applicability; description of the other calcium carbide furnaces subcategory. The provisions of this subpart are applicable to discharges...

  16. 40 CFR 424.50 - Applicability; description of the other calcium carbide furnaces subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... calcium carbide furnaces subcategory. 424.50 Section 424.50 Protection of Environment ENVIRONMENTAL... CATEGORY Other Calcium Carbide Furnaces Subcategory § 424.50 Applicability; description of the other calcium carbide furnaces subcategory. The provisions of this subpart are applicable to discharges...

  17. 40 CFR 424.50 - Applicability; description of the other calcium carbide furnaces subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... calcium carbide furnaces subcategory. 424.50 Section 424.50 Protection of Environment ENVIRONMENTAL... CATEGORY Other Calcium Carbide Furnaces Subcategory § 424.50 Applicability; description of the other calcium carbide furnaces subcategory. The provisions of this subpart are applicable to discharges...

  18. 40 CFR 424.50 - Applicability; description of the other calcium carbide furnaces subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... calcium carbide furnaces subcategory. 424.50 Section 424.50 Protection of Environment ENVIRONMENTAL... CATEGORY Other Calcium Carbide Furnaces Subcategory § 424.50 Applicability; description of the other calcium carbide furnaces subcategory. The provisions of this subpart are applicable to discharges...

  19. 40 CFR 424.50 - Applicability; description of the other calcium carbide furnaces subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... other calcium carbide furnaces subcategory. 424.50 Section 424.50 Protection of Environment... SOURCE CATEGORY Other Calcium Carbide Furnaces Subcategory § 424.50 Applicability; description of the other calcium carbide furnaces subcategory. The provisions of this subpart are applicable to discharges...

  20. Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

    NASA Technical Reports Server (NTRS)

    Singh, M.; Levine, S. R.

    1995-01-01

    A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

  1. Growth characteristics of primary M7C3 carbide in hypereutectic Fe-Cr-C alloy.

    PubMed

    Liu, Sha; Zhou, Yefei; Xing, Xiaolei; Wang, Jibo; Ren, Xuejun; Yang, Qingxiang

    2016-09-06

    The microstructure of the hypereutectic Fe-Cr-C alloy is observed by optical microscopy (OM). The initial growth morphology, the crystallographic structure, the semi-molten morphology and the stacking faults of the primary M7C3 carbide are observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The in-suit growth process of the primary M7C3 carbide was observed by confocal laser microscope (CLM). It is found that the primary M7C3 carbide in hypereutectic Fe-Cr-C alloy is irregular polygonal shape with several hollows in the center and gaps on the edge. Some primary M7C3 carbides are formed by layers of shell or/and consist of multiple parts. In the initial growth period, the primary M7C3 carbide forms protrusion parallel to {} crystal planes. The extending and revolving protrusion forms the carbide shell. The electron backscattered diffraction (EBSD) maps show that the primary M7C3 carbide consists of multiple parts. The semi-molten M7C3 carbide contains unmelted shell and several small-scale carbides inside, which further proves that the primary M7C3 carbide is not an overall block. It is believed that the coalescence of the primary M7C3 carbides is ascribed to the growing condition of the protrusion and the gap filling process.

  2. Growth characteristics of primary M7C3 carbide in hypereutectic Fe-Cr-C alloy

    PubMed Central

    Liu, Sha; Zhou, Yefei; Xing, Xiaolei; Wang, Jibo; Ren, Xuejun; Yang, Qingxiang

    2016-01-01

    The microstructure of the hypereutectic Fe-Cr-C alloy is observed by optical microscopy (OM). The initial growth morphology, the crystallographic structure, the semi-molten morphology and the stacking faults of the primary M7C3 carbide are observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The in-suit growth process of the primary M7C3 carbide was observed by confocal laser microscope (CLM). It is found that the primary M7C3 carbide in hypereutectic Fe-Cr-C alloy is irregular polygonal shape with several hollows in the center and gaps on the edge. Some primary M7C3 carbides are formed by layers of shell or/and consist of multiple parts. In the initial growth period, the primary M7C3 carbide forms protrusion parallel to {} crystal planes. The extending and revolving protrusion forms the carbide shell. The electron backscattered diffraction (EBSD) maps show that the primary M7C3 carbide consists of multiple parts. The semi-molten M7C3 carbide contains unmelted shell and several small-scale carbides inside, which further proves that the primary M7C3 carbide is not an overall block. It is believed that the coalescence of the primary M7C3 carbides is ascribed to the growing condition of the protrusion and the gap filling process. PMID:27596718

  3. Friction-induced structural transformations of the carbide phase in Hadfield steel

    NASA Astrophysics Data System (ADS)

    Korshunov, L. G.; Sagaradze, V. V.; Chernenko, N. L.; Shabashov, V. A.

    2015-08-01

    Structural transformations of the carbide phase in Hadfield steel (110G13) that occur upon plastic deformation by dry sliding friction have been studied by methods of optical metallography, X-ray diffraction, and transmission electron microscopy. Deformation is shown to lead to the refinement of the particles of the carbide phase (Fe, Mn)3C to a nanosized level. The effect of the deformation-induced dissolution of (Fe, Mn)3C carbides in austenite of 110G13 (Hadfield) steel has been revealed, which manifests in the appearance of new lines belonging to austenite with an unusually large lattice parameter ( a = 0.3660-0.3680 nm) in the X-ray diffraction patterns of steel tempered to obtain a fine-lamellar carbide phase after deformation. This austenite is the result of the deformation-induced dissolution of disperse (Fe, Mn)3C particles, which leads to the local enrichment of austenite with carbon and manganese. The tempering that leads to the formation of carbide particles in 110G13 steel exerts a negative influence on the strain hardening of the steel, despite the increase in the hardness of steel upon tempering and the development of the processes of the deformation-induced dissolution of the carbide phase, which leads to the strengthening of the γ solid solution.

  4. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  5. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  6. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

    1989-01-01

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

  7. Carbides Evolution in a Ni-16Mo-7Cr Base Superalloy during Long-Term Thermal Exposure

    PubMed Central

    Han, Fenfen; Jiang, Li; Ye, Xiangxi; Lu, Yanling; Li, Zhijun; Zhou, Xingtai

    2017-01-01

    The effect of long-term thermal exposure on the carbide evolution in a Ni-16Mo-7Cr base superalloy was investigated. The results show that M12C carbides are mainly precipitated on the grain boundaries during thermal exposure, and the primary massive M6C carbides can be completely transformed to M12C carbides in situ at temperatures above 750 °C for long-term thermal exposure. The transformation from M6C carbides to M12C carbides is attributed to the release of C atoms from M6C, which results in the morphology changes of massive carbides, and stabilization of the sizes of M12C carbides precipitated on the grain boundaries. PMID:28772881

  8. Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

    NASA Astrophysics Data System (ADS)

    Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.

    2018-05-01

    The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

  9. Characterization of the carbides and the martensite phase in powder-metallurgy high-speed steel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Godec, Matjaz, E-mail: matjaz.godec@imt.si; Batic, Barbara Setina; Mandrino, Djordje

    2010-04-15

    A microstructural characterization of the powder-metallurgy high-speed-steel S390 Microclean was performed based on an elemental distribution of the carbide phase as well as crystallographic analyses. The results showed that there were two types of carbides present: vanadium-rich carbides, which were not chemically homogeneous and exhibited a tungsten-enriched or tungsten-depleted central area; and chemically homogeneous tungsten-rich M{sub 6}C-type carbides. Despite the possibility of chemical inhomogenities, the crystallographic orientation of each of the carbides was shown to be uniform. Using electron backscatter diffraction the vanadium-rich carbides were determined to be either cubic VC or hexagonal V{sub 6}C{sub 5}, while the tungsten-rich carbidesmore » were M{sub 6}C. The electron backscatter diffraction results were also verified using X-ray diffraction. Several electron backscatter diffraction pattern maps were acquired in order to define the fraction of each carbide phase as well as the amount of martensite phase. The fraction of martensite was estimated using band-contrast images, while the fraction of carbides was calculated using the crystallographic data.« less

  10. Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.; Williams, W.

    1980-01-01

    The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

  11. Preliminary study of neutron absorption by concrete with boron carbide addition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat

    2014-02-12

    Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates themore » most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.« less

  12. Preliminary study of neutron absorption by concrete with boron carbide addition

    NASA Astrophysics Data System (ADS)

    Abdullah, Yusof; Ariffin, Fatin Nabilah Tajul; Hamid, Roszilah; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat; Ahmad, Megat Harun Al Rashid Megat; Yazid, Hafizal; Ahmad, Sahrim; Mohamed, Abdul Aziz

    2014-02-01

    Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates the most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.

  13. Method of coating graphite tubes with refractory metal carbides

    DOEpatents

    Wohlberg, C.

    1973-12-11

    A method of coating graphite tubes with a refractory metal carbide is described. An alkali halide is reacted with a metallic oxide, the metallic portion being selected from the IVth or Vth group of the Periodic Table, the resulting salt reacting in turn with the carbon to give the desired refractory metal carbide coating. (Official Gazette)

  14. M(2)C Carbide Precipitation in Martensitic Cobalt - Steels.

    NASA Astrophysics Data System (ADS)

    Montgomery, Jonathan Scott

    1990-01-01

    M_2C carbide precipitation was investigated in martensitic Co-Ni steels, including the commercial AF1410 steel and a series of higher-strength model alloys. Results of TEM (from both thin foils and extraction replicas) and X-ray diffraction were combined with results of collaborative SANS and APFIM studies to determine phase fractions, compositions, and lattice parameters throughout precipitation, including estimation of carbide initial critical nucleus properties. The composition dependence of the M_2C lattice parameters was modelled to predict the composition-dependent transformation eigen-strains for coherent precipitation; this was input into collaborative numerical calculations of both the coherent carbide elastic self energy and the dislocation interaction energy during heterogeneous precipitation. The observed overall precipitation behavior is consistent with theoretically-predicted behavior at high supersaturations where nucleation and coarsening compete such that the average particle size remains close to the critical size as supersaturation drops. However, the coarsening in this system follows a t^{1over 5} rate law consistent with heterogeneous precipitation on dislocations. Initial precipitation appears to be coherent, the carbides tending toward a rod shape with major axis oriented along the minimum principal strain direction. At initial nucleation, particles are Fe-rich and C-deficient, diminishing the transformation eigenstrains to a near invariant-line strain condition. The observed relation between carbide volume fraction and the shape -dependent capillarity parameter partialS/ partialV implies a coherency loss transition in AF1410 reached at 8hr tempering at 510 ^circC. The precipitation in AF1410 at 510^ circC exhibits a "renucleation" phenomenon in which a second stage of nucleation occurs beyond the precipitation half-completion time (1-2hrs). It appears that the carbide composition during precipitation follows a trajectory of increasing

  15. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  16. Boron carbide nanostructures: A prospective material as an additive in concrete

    NASA Astrophysics Data System (ADS)

    Singh, Paviter; Kaur, Gurpreet; Kumar, Rohit; Kumar, Umesh; Singh, Kulwinder; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Kumar, Akshay

    2018-05-01

    In recent decades, manufacture and ingestion of concrete have increased particularly in developing countries. Due to its low cost, safety and strength, concrete have become an economical choice for protection of radiation shielding material in nuclear reactors. As boron carbide has been known as a neutron absorber material makes it a great candidate as an additive in concrete for shielding radiation. This paper presents the synthesis of boron carbide nanostructures by using ball milling method. The X-ray diffraction pattern, Fourier Transform Infrared Spectroscopy (FTIR) and Scanning Electron Microscope analysis confirms the formation of boron carbide nanostructures. The effect of boron carbide nanostructures on the strength of concrete samples was demonstrated. The compressive strength tests of concrete cube B4C powder additives for 0 % and 5 % of total weight of cement was compared for different curing time period such as 7, 14, 21 and 28 days. The high compressive strength was observed when 5 wt % boron carbide nanostructures were used as an additive in concrete samples after 28 days curing time and showed significant improvement in strength.

  17. The structure and function of supported molybdenum nitride and molybdenum carbide hydrotreating catalysts

    NASA Astrophysics Data System (ADS)

    Dolce, Gregory Martin

    1997-11-01

    A series of gamma-Alsb2Osb3 supported molybdenum nitrides and carbides were prepared by the temperature programmed reaction of supported molybdates with ammonia and methane/hydrogen mixtures, respectively. In the first part of this research, the effects of synthesis heating rates and molybdenum loading on the catalytic properties of the materials were examined. A significant amount of excess carbon was deposited on the surface of the carbides during synthesis. The materials consisted of small particles which were very highly dispersed. Oxygen chemisorption indicated that the nitride particles may have been two-dimensional. The dispersion of the carbides, however, appeared to decrease as the loading increased. The catalysts were evaluated for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). The molybdenum loading had the largest effect on the activity of the materials. For the nitrides, the HDN and HDS activities were inverse functions of the loading. This suggested that the most active HDN and HDS sites were located at the perimeter of the two-dimensional particles. The HDN and HDS activities of the carbides followed the same trend as the oxygen uptake. This result suggested that oxygen titrated the active sites on the supported carbides. Selected catalysts were evaluated for methylcarbazole HDN, dibenzothiophene HDS, and dibenzofuran HDO. The activity and selectivity of the nitrides and carbides were competitive with a presulfided commercial catalyst. In the second part of this work, a series of supported nitrides and carbides were prepared using a wider range of loadings (5-30 wt% Mo). Thermogravimetric analysis was used to determine the temperature at which excess carbon was deposited on the carbides. By modifying the synthesis parameters, the deposition of excess carbon was effectively inhibited. The dispersions of the supported nitrides and carbides were constant and suggested that the materials consisted of two

  18. Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles

    NASA Astrophysics Data System (ADS)

    Widjaja, Yuniarto; Musgrave, Charles B.

    2002-08-01

    Atomic layer deposition (ALD) of hafnium oxide (HfO2) using HfCl4 and H2O as precursors is studied using density functional theory. The mechanism consists of two deposition half-reactions: (1) HfCl4 with Hf-OH sites, and (2) H2O with Hf-Cl sites. Both half-reactions exhibit stable intermediates with energies lower than those of the final products. We show that increasing the temperature reduces the stability of the complex. However, increasing temperature also increases the dissociation free-energy barrier, which in turn results in increased desorption of adsorbed precursors. Both half-reactions are qualitatively similar to the corresponding reactions of ZrO2 ALD using ZrCl4 and H2O.

  19. Intrinsic Defect Ferromagnetism: The case of Hafnium Oxide

    NASA Astrophysics Data System (ADS)

    Das Pemmaraju, Chaitanya

    2005-03-01

    In view of the recent experimental reports of intrinsic ferromagnetism in Hafnium Oxide (HfO2) thin film systems ootnotetextM. Venkatesan, C. B. Fitzgerald, J. M. D. Coey Nature 430, 630 (2004) Brief Communications, we carried out first principles investigations to look for magnetic structure in HfO2 possibly brought about by the presence of small concentrations of intrinsic point defects. Ab initio electronic structure calculations using Density Functional Theory (DFT) show that isolated cation vacancy sites in HfO2 lead to the formation of high spin defect states which couple ferromagnetically to each other. Interestingly, these high spin states are observed in the low symmetry monoclinic and tetragonal phases while the highly symmetric cubic flourite phase exhibits a non-magnetic ground state. Detailed studies of the electronic structure of cation vacancies in the three crystalline phases of Hafnia show that symmetry leading to orbitally degenerate defect levels is not a pre-requsite for ferromagnetism and that the interplay between Kinetic, Coulomb and Exchange energy together with favourable coupling to the Crystalline environment can lead to high spin ferromagnetic ground states even in extreme low symmetry systems like monoclinic HfO2. These findings open up a much wider class of systems to the possibility of intrinsic defect ferromagnetism.

  20. Work functions of hafnium nitride thin films as emitter material for field emitter arrays

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gotoh, Yasuhito, E-mail: gotoh.yasuhito.5w@kyoto-u.ac.jp; Fujiwara, Sho; Tsuji, Hiroshi

    The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. Amore » little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.« less

  1. Solid oxide membrane-assisted controllable electrolytic fabrication of metal carbides in molten salt.

    PubMed

    Zou, Xingli; Zheng, Kai; Lu, Xionggang; Xu, Qian; Zhou, Zhongfu

    2016-08-15

    Silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), and tantalum carbide (TaC) have been electrochemically produced directly from their corresponding stoichiometric metal oxides/carbon (MOx/C) precursors by electrodeoxidation in molten calcium chloride (CaCl2). An assembled yttria stabilized zirconia solid oxide membrane (SOM)-based anode was employed to control the electrodeoxidation process. The SOM-assisted controllable electrochemical process was carried out in molten CaCl2 at 1000 °C with a potential of 3.5 to 4.0 V. The reaction mechanism of the electrochemical production process and the characteristics of these produced metal carbides (MCs) were systematically investigated. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy analyses clearly identify that SiC, TiC, ZrC, and TaC carbides can be facilely fabricated. SiC carbide can be controlled to form a homogeneous nanowire structure, while the morphologies of TiC, ZrC, and TaC carbides exhibit porous nodular structures with micro/nanoscale particles. The complex chemical/electrochemical reaction processes including the compounding, electrodeoxidation, dissolution-electrodeposition, and in situ carbonization processes in molten CaCl2 are also discussed. The present results preliminarily demonstrate that the molten salt-based SOM-assisted electrodeoxidation process has the potential to be used for the facile and controllable electrodeoxidation of MOx/C precursors to micro/nanostructured MCs, which can potentially be used for various applications.

  2. Carbide-derived carbons - From porous networks to nanotubes and graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Presser, V.; Heon, M.; Gogotsi, Y.

    2011-02-09

    Carbide-derived carbons (CDCs) are a large family of carbon materials derived from carbide precursors that are transformed into pure carbon via physical (e.g., thermal decomposition) or chemical (e.g., halogenation) processes. Structurally, CDC ranges from amorphous carbon to graphite, carbon nanotubes or graphene. For halogenated carbides, a high level of control over the resulting amorphous porous carbon structure is possible by changing the synthesis conditions and carbide precursor. The large number of resulting carbon structures and their tunability enables a wide range of applications, from tribological coatings for ceramics, or selective sorbents, to gas and electrical energy storage. In particular, themore » application of CDC in supercapacitors has recently attracted much attention. This review paper summarizes key aspects of CDC synthesis, properties, and applications. It is shown that the CDC structure and properties are sensitive to changes of the synthesis parameters. Understanding of processing–structure–properties relationships facilitates tuning of the carbon material to the requirements of a certain application.« less

  3. Development and Processing of Nickel Aluminide-Carbide Alloys

    NASA Technical Reports Server (NTRS)

    Newport, Timothy Scott

    1996-01-01

    With the upper temperature limit of the Ni-based superalloys attained, a new class of materials is required. Intermetallics appear as likely candidates because of their attractive physical properties. With a relatively low density, high thermal conductivity, excellent oxidation resistance, high melting point, and simple crystal structure, nickel aluminide (NiAl) appears to be a potential candidate. However, NiAl is limited in structural applications due to its low room temperature fracture toughness and poor elevated temperature strength. One approach to improving these properties has been through the application of eutectic composites. Researchers have shown that containerless directional solidification of NiAl-based eutectic alloys can provide improvement in both the creep strength and fracture toughness. Although these systems have shown improvements in the mechanical properties, the presence of refractory metals increases the density significantly in some alloys. Lower density systems, such as the carbides, nitrides, and borides, may provide NiAl-based eutectic structure. With little or no information available on these systems, experimental investigation is required. The objective of this research was to locate and develop NiAl-carbide eutectic alloys. Exploratory arc-melts were performed in NiAl-refractory metal-C systems. Refractory metal systems investigated included Co, Cr, Fe, Hf, Mo, Nb, Ta, Ti, W, and Zr. Systems containing carbides with excellent stability (i.e.,HfC, NbC, TaC, TiC, and ZrC) produced large blocky cubic carbides in an NiAl matrix. The carbides appeared to have formed in the liquid state and were randomly distributed throughout the polycrystalline NiAl. The Co, Cr, Fe, Mo, and W systems contained NiAl dendrites with a two-phase interdendritic microconstituent present. Of these systems, the NiAl-Mo-C system had the most promising microstructure for in-situ composites. Three processing techniques were used to evaluate the NiAl-Mo-C system

  4. Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

    DOEpatents

    Peng, Yu-Min; Wang, Jih-Wen; Liue, Chun-Ying; Yeh, Shinn-Horng

    1994-01-01

    A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

  5. Formation Energies and Electronic Properties of Vanadium Carbides Found in High Strength Steel Alloys

    NASA Astrophysics Data System (ADS)

    Limmer, Krista; Medvedeva, Julia

    2013-03-01

    Carbide formation and stabilization in steels is of great interest owing to its effect on the microstructure and properties of the Fe-based alloys. The appearance of carbides with different metal/C ratios strongly depends on the carbon concentration, alloy composition as well as the heat treatment. Strong carbide-forming elements such as Ti, V, and Nb have been used in microalloyed steels; with VC showing an increased solubility in the iron matrix as compared with TiC and NbC. This allows for dissolution of the VC into the steel during heating and fine precipitation during cooling. In addition to VC, the primary vanadium carbide with cubic structure, a wide range of non-stoichiometric compositions VCy with y varying from 0.72 to 0.88, has been observed. This range includes two ordered compounds, V8C7 and V6C5. In this study, first-principles density functional theory (DFT) is employed to examine the stability of the binary carbides by calculating their formation energies. We compare the local structures (atomic coordination, bond distances and angles) and the density of states in optimized geometries of the carbides. Further, the effect of alloying additions, such as niobium and titanium, on the carbide stabilization is investigated. We determine the energetically preferable substitutional atom location in each carbide and study the impurity distribution as well as its role in the carbide formation energy and electronic structure.

  6. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  7. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  8. The interfacial orientation relationship of oxide nanoparticles in a hafnium-containing oxide dispersion-strengthened austenitic stainless steel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Miao, Yinbin, E-mail: miao2@illinois.edu; Mo, Kun; Cui, Bai

    2015-03-15

    This work reports comprehensive investigations on the orientation relationship of the oxide nanoparticles in a hafnium-containing austenitic oxide dispersion-strengthened 316 stainless steel. The phases of the oxide nanoparticles were determined by a combination of scanning transmission electron microscopy–electron dispersive X-ray spectroscopy, atom probe tomography and synchrotron X-ray diffraction to be complex Y–Ti–Hf–O compounds with similar crystal structures, including bixbyite Y{sub 2}O{sub 3}, fluorite Y{sub 2}O{sub 3}–HfO{sub 2} solid solution and pyrochlore (or fluorite) Y{sub 2}(Ti,Hf){sub 2−x}O{sub 7−x}. High resolution transmission electron microscopy was used to characterize the particle–matrix interfaces. Two different coherency relationships along with one axis-parallel relation between themore » oxide nanoparticles and the steel matrix were found. The size of the nanoparticles significantly influences the orientation relationship. The results provide insight into the relationship of these nanoparticles with the matrix, which has implications for interpreting material properties as well as responses to radiation. - Highlights: • The oxide nanoparticles in a hafnium-containing austenitic ODS were characterized. • The nanoparticles are Y–Hf–Ti–O enriched phases according to APT and STEM–EDS. • Two coherency and an axis-parallel orientation relationships were found by HR-TEM. • Particle size has a prominent effect on the orientation relationship (OR). • Formation mechanism of the oxide nanoparticles was discussed based on the ORs.« less

  9. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  10. Influence of oxygen on the carbide formation on tungsten

    NASA Astrophysics Data System (ADS)

    Luthin, J.; Linsmeier, Ch.

    2001-03-01

    As a first wall material in nuclear fusion devices, tungsten will interact with carbon and oxygen from the plasma. In this study, we report on the process of thermally induced carbide formation of thin carbon films on polycrystalline tungsten and the influence of oxygen on this process. All investigations are performed using X-ray photoelectron spectroscopy (XPS). Carbon films are supplied through electron beam evaporation of graphite. The carbidization process, monitored during increased substrate temperature, can be divided into four phases. In phase I disordered carbon converts into graphite-like carbon. In phase II significant diffusion and the reaction to W 2C is observed, followed by phase III which is dominated by the presence of W 2C and the beginning reaction to WC. Finally in phase IV only WC is present, but the total carbon amount has strongly decreased. Different mechanisms of oxygen influence on the carbide formation are proposed and measurements of the reaction of carbon on tungsten with intermediate oxide layers are presented in detail. A WO 2+ x intermediate layer completely inhibits the carbide formation, while a WO 2 layer leads to WC formation at temperatures above 1270 K.

  11. Digital image analysis to quantify carbide networks in ultrahigh carbon steels

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hecht, Matthew D.; Webler, Bryan A.; Picard, Yoosuf N., E-mail: ypicard@cmu.edu

    A method has been developed and demonstrated to quantify the degree of carbide network connectivity in ultrahigh carbon steels through digital image processing and analysis of experimental micrographs. It was shown that the network connectivity and carbon content can be correlated to toughness for various ultrahigh carbon steel specimens. The image analysis approach first involved segmenting the carbide network and pearlite matrix into binary contrast representations via a grayscale intensity thresholding operation. Next, the carbide network pixels were skeletonized and parceled into braches and nodes, allowing the determination of a connectivity index for the carbide network. Intermediate image processing stepsmore » to remove noise and fill voids in the network are also detailed. The connectivity indexes of scanning electron micrographs were consistent in both secondary and backscattered electron imaging modes, as well as across two different (50 × and 100 ×) magnifications. Results from ultrahigh carbon steels reported here along with other results from the literature generally showed lower connectivity indexes correlated with higher Charpy impact energy (toughness). A deviation from this trend was observed at higher connectivity indexes, consistent with a percolation threshold for crack propagation across the carbide network. - Highlights: • A method for carbide network analysis in steels is proposed and demonstrated. • ImageJ method extracts a network connectivity index from micrographs. • Connectivity index consistent in different imaging conditions and magnifications. • Impact energy may plateau when a critical network connectivity is exceeded.« less

  12. Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

    NASA Astrophysics Data System (ADS)

    Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

    2013-12-01

    An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

  13. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vargas, Mirella; Murphy, N. R.; Ramana, C. V., E-mail: rvchintalapalle@utep.edu

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s} = 25–700 °C). HfO{sub 2} films grown at T{sub s} < 200 °C were amorphous, while those grown at T{sub s} ≥ 200 °C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (ρ) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-ρ-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and themore » microstructure of HfO{sub 2} films.« less

  14. Method for homogenizing alloys susceptible to the formation of carbide stringers and alloys prepared thereby

    DOEpatents

    Braski, David N.; Leitnaker, James M.

    1980-01-01

    A novel fabrication procedure prevents or eliminates the reprecipitation of segregated metal carbides such as stringers in Ti-modified Hastelloy N and stainless steels to provide a novel alloy having carbides uniformly dispersed throughout the matrix. The fabrication procedure is applicable to other alloys prone to the formation of carbide stringers. The process comprises first annealing the alloy at a temperature above the single phase temperature for sufficient time to completely dissolve carbides and then annealing the single phase alloy for an additional time to prevent the formation of carbide stringers upon subsequent aging or thermomechanical treatment.

  15. Austenite decomposition to carbide-rich products in Fe-0.30C-6.3W

    NASA Astrophysics Data System (ADS)

    Hackenberg, R. E.; Granada, D. G.; Shiflet, G. J.

    2002-12-01

    The kinetics, morphology, and elemental distributions associated with the decomposition of austenite in Fe-0.30C-6.3W were surveyed, especially in the bay region of the time-temperature-transformation (TTT) diagram. Carbide precipitation characteristics were of particular interest. Similar to Fe-C-Mo and Fe-C-Cr alloys, grain- and twin-boundary bainite containing sheets of alloy carbides dominated the microstructure at and above the bay, while popcorn-like bainite was observed immediately below the bay. Nonequilibrium carbide-phase combinations were obtained both above and below the bay, although W partitioning to the alloy carbides was always observed. The carbon level in the remaining austenite increased with reaction time at a given temperature, which, at the later stages of reaction, helped trigger the growth of a constituent containing a high density of nonlamellar carbides. These nonequilibrium reaction-path characteristics are considered to originate from crystallographic and interfacial structure constraints affecting the nucleation of carbides at ferrite-austenite interfaces.

  16. The growth mechanism of grain boundary carbide in Alloy 690

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Hui, E-mail: huili@shu.edu.cn; Institute of Materials, Shanghai University, Shanghai 200072; Xia, Shuang

    2013-07-15

    The growth mechanism of grain boundary M{sub 23}C{sub 6} carbides in nickel base Alloy 690 after aging at 715 °C was investigated by high resolution transmission electron microscopy. The grain boundary carbides have coherent orientation relationship with only one side of the matrix. The incoherent phase interface between M{sub 23}C{sub 6} and matrix was curved, and did not lie on any specific crystal plane. The M{sub 23}C{sub 6} carbide transforms from the matrix phase directly at the incoherent interface. The flat coherent phase interface generally lies on low index crystal planes, such as (011) and (111) planes. The M{sub 23}C{submore » 6} carbide transforms from a transition phase found at curved coherent phase interface. The transition phase has a complex hexagonal crystal structure, and has coherent orientation relationship with matrix and M{sub 23}C{sub 6}: (111){sub matrix}//(0001){sub transition}//(111){sub carbide}, <112{sup ¯}>{sub matrix}//<21{sup ¯}10>{sub transition}//<112{sup ¯}>{sub carbide}. The crystal lattice constants of transition phase are c{sub transition}=√(3)×a{sub matrix} and a{sub transition}=√(6)/2×a{sub matrix}. Based on the experimental results, the growth mechanism of M{sub 23}C{sub 6} and the formation mechanism of transition phase are discussed. - Highlights: • A transition phase was observed at the coherent interfaces of M{sub 23}C{sub 6} and matrix. • The transition phase has hexagonal structure, and is coherent with matrix and M{sub 23}C{sub 6}. • The M{sub 23}C{sub 6} transforms from the matrix directly at the incoherent phase interface.« less

  17. Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

    DTIC Science & Technology

    2013-06-01

    ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

  18. Process for preparing fine grain titanium carbide powder

    DOEpatents

    Janney, M.A.

    1985-03-12

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  19. Process for preparing fine grain titanium carbide powder

    DOEpatents

    Janey, Mark A.

    1986-01-01

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular-level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  20. Effect of carbide distribution on rolling-element fatigue life of AMS 5749

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Bamberger, E. N.

    1983-01-01

    Endurance tests with ball bearings made of corrosion resistant bearing steel which resulted in fatigue lives much lower than were predicted are discussed. Metallurgical analysis revealed an undesirable carbide distribution in the races. It was shown in accelerated fatigue tests in the RC rig that large, banded carbides can reduce rolling element fatigue life by a factor of approximately four. The early spalling failures on the bearing raceways are attributed to the large carbide size and banded distribution.

  1. Catalytic carbide formation at aluminium-carbon interfaces

    NASA Technical Reports Server (NTRS)

    Maruyama, B.; Rabenberg, L.; Ohuchi, F. S.

    1990-01-01

    X-ray photoelectron spectroscopy investigations of the reaction of several monolayer-thick films of aluminum with glassy carbon substrates are presented. The influence of molecular oxygen and water vapor on the rate of reaction is examined. It is concluded that water vapor catalyzed the formation of aluminum carbide from aluminum and carbon by forming active sites which weakened carbon-carbon bonds at the glassy carbon surface, thus assisting their cleavage. The rate of carbide formation for undosed and molecular oxygen-dosed examples was less as neither metallic aluminum nor oxygen-formed alumina could bond to the carbon atom with sufficient strength to dissociate it quickly.

  2. Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures

    DTIC Science & Technology

    1997-12-15

    TITLE AND SUBTITLE Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures 6. AUTHOR(S) Kristen J. Law...project has developed a low temperature polymer ceramic composite consisting of boron carbide layers bonded by cement, laminated with polymer...composite have been shown to compare favorably to those of partially sintered boron carbide. Applications for this material have been identified in

  3. Tribochemistry of contact interfaces of nanocrystalline molybdenum carbide films

    NASA Astrophysics Data System (ADS)

    Kumar, D. Dinesh; Kumar, N.; Panda, Kalpataru; Kamalan Kirubaharan, A. M.; Kuppusami, P.

    2018-07-01

    Transition metal carbides (TMC) are known for their improved tribological properties and are sensitive to the tribo-atmospheric environment. Nanocrystalline molybdenum carbide (MoC) thin films were deposited by DC magnetron sputtering technique using reactive CH4 gas. The friction and wear resistance properties of MoC thin films were significantly improved in humid-atmospheric condition as compared to high-vacuum tribo-condition. A comprehensive chemical analysis of deformed contact interfaces was carried out by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. XPS and Raman spectroscopy showed the formation of stable molybdenum-oxide (MoO), molybdenum carbide (MoC) and amorphous carbon (a-C) tribo-phases. Moreover, during the sliding in humid-atmospheric condition, these phases were extensively deposited on the sliding steel ball counter body which significantly protected against undesirable friction and wear.

  4. Effect of electroslag remelting on carbides in 8Cr13MoV martensitic stainless steel

    NASA Astrophysics Data System (ADS)

    Zhu, Qin-tian; Li, Jing; Shi, Cheng-bin; Yu, Wen-tao

    2015-11-01

    The effect of electroslag remelting (ESR) on carbides in 8Cr13MoV martensitic stainless steel was experimentally studied. Phases precipitated from liquid steel during solidification were calculated using the Thermo-Calc software. The carbon segregation was analyzed by original position analysis (OPA), and the carbides were analyzed by optical microscopy (OM), scanning electron microscopy (SEM), energy- dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). The results indicated that more uniform carbon distribution and less segregation were obtained in the case of samples subjected to the ESR process. After ESR, the amount of netty carbides decreased significantly, and the chromium and vanadium contents in the grain-boundary carbides was reduced. The total area and average size of carbides were obviously smaller after the ESR process. In the sample subjected to ESR, the morphology of carbides changed from lamellar and angular to globular or lump, whereas the types of carbides did not change; both M23C6 and M7C3 were present before and after the ESR process.

  5. Radiographic and ultrasonic characterization of sintered silicon carbide

    NASA Technical Reports Server (NTRS)

    Baaklini, G. Y.; Abel, P. B.

    1988-01-01

    The capabilities were investigated of projection microfocus X-radiography, ultrasonic velocity and attenuation, and reflection scanning acoustic microscopy for characterizing silicon carbide specimens. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room temperature, four point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography and acoustic microscopy for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined.

  6. Process for forming silicon carbide films and microcomponents

    DOEpatents

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  7. Process for forming silicon carbide films and microcomponents

    DOEpatents

    Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  8. The effect of carbide precipitation on the hydrogen-enhanced fracture behavior of alloy 690

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Symons, D.M.

    1998-04-01

    Alloy 690 is susceptible to hydrogen embrittlement where hydrogen reduces the ductility and causes the fracture morphology to change to predominantly intergranular. The role of carbide precipitation in the embrittlement behavior is not well defined. The objective of this work is to understand the effect of intergranular carbide precipitation on the hydrogen embrittlement of alloy 690. The work reported herein used tensile and compact-tension specimens in both the solution-annealed condition (minimal grain-boundary carbide precipitation) and in the solution-annealed condition followed by an aging treatment to precipitate grain-boundary carbides. By performing the mechanical tests on materials in both uncharged and hydrogen-chargedmore » conditions, it was possible to evaluate the degree of embrittlement as a function of the carbide precipitation. It is shown that the embrittlement due to hydrogen increased as the material was aged to allow grain-boundary carbide precipitation. It is proposed that the increase in embrittlement was caused by increased hydrogen at the carbide/matrix interface due to the trapping and increased stresses at the precipitate interface, which developed from strain incompatibility of the precipitate with the matrix. It is further shown that increasing the hydrostatic stress increased the tendency for intergranular fracture, as is consistent with other nickel-base alloys.« less

  9. Method for fabricating boron carbide articles

    DOEpatents

    Ardary, Zane L.; Reynolds, Carl D.

    1980-01-01

    The present invention is directed to the fabrication of boron carbide articles having length-to-diameter or width ratios greater than 2 to 1. The process of the present invention is practiced by the steps comprising hot pressing boron carbide powder into article segments or portions in which the segments have a length-to-diameter or width ratio less than 1.5, aligning a plurality of the initially hot-pressed segments in a hot-pressing die with the end surfaces of the segments placed in intimate contact with one another, and then hot pressing the aligned segments into an article of the desired configuration. The resulting article exhibits essentially uniform density throughout the structure with the bonds between the segments being equivalent in hardness, strength, and density to the remainder of the article.

  10. Hafnium-doped hydroxyapatite nanoparticles with ionizing radiation for lung cancer treatment.

    PubMed

    Chen, Min-Hua; Hanagata, Nobutaka; Ikoma, Toshiyuki; Huang, Jian-Yuan; Li, Keng-Yuan; Lin, Chun-Pin; Lin, Feng-Huei

    2016-06-01

    Recently, photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. However, the optical approach of PDT is limited by tissue penetration depth of visible light. In this study, we propose that a ROS-enhanced nanoparticle, hafnium-doped hydroxyapatite (Hf:HAp), which is a material to yield large quantities of ROS inside the cells when the nanoparticles are bombarded with high penetrating power of ionizing radiation. Hf:HAp nanoparticles are generated by wet chemical precipitation with total doping concentration of 15mol% Hf(4+) relative to Ca(2+) in HAp host material. The results show that the HAp particles could be successfully doped with Hf ions, resulted in the formation of nano-sized rod-like shape and with pH-dependent solubility. The impact of ionizing radiation on Hf:HAp nanoparticles is assessed by using in-vitro and in-vivo model using A549 cell line. The 2',7'-dichlorofluorescein diacetate (DCFH-DA) results reveal that after being exposed to gamma rays, Hf:HAp could significantly lead to the formation of ROS in cells. Both cell viability (WST-1) and cytotoxicity (LDH) assay show the consistent results that A549 lung cancer cell lines are damaged with changes in the cells' ROS level. The in-vivo studies further demonstrate that the tumor growth is inhibited owing to the cells apoptosis when Hf:HAp nanoparticles are bombarded with ionizing radiation. This finding offer a new therapeutic method of interacting with ionizing radiation and demonstrate the potential of Hf:HAp nanoparticles in tumor treatment, such as being used in a palliative treatment after lung surgical procedure. Photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. Unfortunately, the approach of PDT is usually limited to the treatment of systemic disease and deeper tumor, due to the limited tissue penetration depth of visible

  11. Interface reactions between silicon carbide and interlayers in silicon carbide copper metal matrix composites

    NASA Astrophysics Data System (ADS)

    Köck, T.; Brendel, A.; Bolt, H.

    2007-05-01

    Novel copper matrix composites reinforced with silicon carbide fibres are considered as a new generation of heat sink materials for the divertor of future fusion reactors. The divertor is exposed to intense particle bombardment and heat loads of up to 15 MW m-2. This component consists of the plasma-facing material which is bonded to the actively cooled heat sink. Due to its high thermal conductivity of about 400 W m-1 K-1 copper is a promising material for the heat sink. To increase the mechanical properties of copper at working temperature (823 K), silicon carbide fibres with a diameter of 140 μm are used to reinforce the interface area between the plasma-facing material and the heat sink. Push-out tests show that the adhesion between SiC fibre and Cu matrix without any interlayer is very low. To increase the fibre-matrix bonding the fibres are coated with Cr and W with a thickness of 300-400 nm before Cu deposition by magnetron sputtering. Push-out tests on these modified fibres show a significant increase in adhesion compared to the fibres without interlayer. XRD investigations after a heat treatment at 923 K show a chromium carbide (Cr23C6, Cr3C2) formation and the absence of chromium silicides. In the case of a W interlayer a W2C formation is detected and also no tungsten silicides. Single-fibre tensile tests were performed to investigate the influence of the reaction zone on the ultimate tensile strength of the fibres. The ultimate tensile strength for fibres without interlayer remains constant at about 2200 MPa after annealing at 923 K. The fibres with chromium and tungsten interlayers, respectively, show a decrease of about 30% of the ultimate tensile strength after the heat treatment at 923 K.

  12. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOEpatents

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  13. Reliable Breakdown Obtained in Silicon Carbide Rectifiers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1997-01-01

    The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

  14. Zirconium carbide as an electrocatalyst for the chromous-chromic redox couple

    NASA Technical Reports Server (NTRS)

    Gahn, R. F.; Reid, M. A.; Yang, C. Y. (Inventor)

    1981-01-01

    Zirconium carbide is used as a catalyst in a REDOX cell for the oxidation of chromous ions to chromic ions and for the reduction of chromic ions to chromous ions. The zirconium carbide is coated on an inert electronically conductive electrode which is present in the anode fluid of the cell.

  15. Structural evolution of molybdenum carbides in hot aqueous environments and impact on low-temperature hydroprocessing of acetic acid

    DOE PAGES

    Choi, Jae -Soon; Schwartz, Viviane; Santillan-Jimenez, Eduardo; ...

    2015-03-13

    In this paper, we investigated the structural evolution of molybdenum carbides subjected to hot aqueous environments and their catalytic performance in low-temperature hydroprocessing of acetic acid. While bulk structures of Mo carbides were maintained after aging in hot liquid water, a portion of carbidic Mo sites were converted to oxidic sites. Water aging also induced changes to the non-carbidic carbon deposited during carbide synthesis and increased surface roughness, which in turn affected carbide pore volume and surface area. The extent of these structural changes was sensitive to the initial carbide structure and was lower under actual hydroprocessing conditions indicating themore » possibility of further improving the hydrothermal stability of Mo carbides by optimizing catalyst structure and operating conditions. Mo carbides were active in acetic acid conversion in the presence of liquid water, their activity being comparable to that of Ru/C. Finally, the results suggest that effective and inexpensive bio-oil hydroprocessing catalysts could be designed based on Mo carbides, although a more detailed understanding of the structure-performance relationships is needed, especially in upgrading of more complex reaction mixtures or real bio-oils.« less

  16. Evaluation of urethane and carbide-tipped blades on wheel-supported snow plows.

    DOT National Transportation Integrated Search

    1997-01-01

    The objective of this study was to evaluate the performance of urethane and carbide-tipped snow plow blades on wheel supported plows. Their performance was compared to that of VDOT's standard blade arrangement: carbide-tipped blades on plows without ...

  17. Toxicity of tungsten carbide and cobalt-doped tungsten carbide nanoparticles in mammalian cells in vitro.

    PubMed

    Bastian, Susanne; Busch, Wibke; Kühnel, Dana; Springer, Armin; Meissner, Tobias; Holke, Roland; Scholz, Stefan; Iwe, Maria; Pompe, Wolfgang; Gelinsky, Michael; Potthoff, Annegret; Richter, Volkmar; Ikonomidou, Chrysanthy; Schirmer, Kristin

    2009-04-01

    Tungsten carbide nanoparticles are being explored for their use in the manufacture of hard metals. To develop nanoparticles for broad applications, potential risks to human health and the environment should be evaluated and taken into consideration. We aimed to assess the toxicity of well-characterized tungsten carbide (WC) and cobalt-doped tungsten carbide (WC-Co) nanoparticle suspensions in an array of mammalian cells. We examined acute toxicity of WC and of WC-Co (10% weight content Co) nanoparticles in different human cell lines (lung, skin, and colon) as well as in rat neuronal and glial cells (i.e., primary neuronal and astroglial cultures and the oligodendrocyte precursor cell line OLN-93). Furthermore, using electron microscopy, we assessed whether nanoparticles can be taken up by living cells. We chose these in vitro systems in order to evaluate for potential toxicity of the nanoparticles in different mammalian organs (i.e., lung, skin, intestine, and brain). Chemical-physical characterization confirmed that WC as well as WC-Co nanoparticles with a mean particle size of 145 nm form stable suspensions in serum-containing cell culture media. WC nanoparticles were not acutely toxic to the studied cell lines. However, cytotoxicity became apparent when particles were doped with Co. The most sensitive were astrocytes and colon epithelial cells. Cytotoxicity of WC-Co nanoparticles was higher than expected based on the ionic Co content of the particles. Analysis by electron microscopy demonstrated presence of WC nanoparticles within mammalian cells. Our findings demonstrate that doping of WC nanoparticles with Co markedly increases their cytotoxic effect and that the presence of WC-Co in particulate form is essential to elicit this combinatorial effect.

  18. The effects of carbide column to swelling potential and Atterberg limit on expansive soil with column to soil drainage

    NASA Astrophysics Data System (ADS)

    Muamar Rifa'i, Alfian; Setiawan, Bambang; Djarwanti, Noegroho

    2017-12-01

    The expansive soil is soil that has a potential for swelling-shrinking due to changes in water content. Such behavior can exert enough force on building above to cause damage. The use of columns filled with additives such as Calcium Carbide is done to reduce the negative impact of expansive soil behavior. This study aims to determine the effect of carbide columns on expansive soil. Observations were made on swelling and spreading of carbides in the soil. 7 Carbide columns with 5 cm diameter and 20 cm height were installed into the soil with an inter-column spacing of 8.75 cm. Wetting is done through a pipe at the center of the carbide column for 20 days. Observations were conducted on expansive soil without carbide columns and expansive soil with carbide columns. The results showed that the addition of carbide column could reduce the percentage of swelling by 4.42%. Wetting through the center of the carbide column can help spread the carbide into the soil. The use of carbide columns can also decrease the rate of soil expansivity. After the addition of carbide column, the plasticity index value decreased from 71.76% to 4.3% and the shrinkage index decreased from 95.72% to 9.2%.

  19. METHOD FOR PRODUCING CEMENTED CARBIDE ARTICLES

    DOEpatents

    Onstott, E.I.; Cremer, G.D.

    1959-07-14

    A method is described for making molded materials of intricate shape where the materials consist of mixtures of one or more hard metal carbides or oxides and matrix metals or binder metals thereof. In one embodiment of the invention 90% of finely comminuted tungsten carbide powder together with finely comminuted cobalt bonding agent is incorporated at 60 deg C into a slurry with methyl alcohol containing 1.5% paraffin, 3% camphor, 3.5% naphthalene, and 1.8% toluene. The compact is formed by the steps of placing the slurry in a mold at least one surface of which is porous to the fluid organic system, compacting the slurry, removing a portion of the mold from contact with the formed object and heating the formed object to remove the remaining organic matter and to sinter the compact.

  20. Novel fabrication of silicon carbide based ceramics for nuclear applications

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  1. Union Carbide's PECOP cops $500,000 fuel cut

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Crawford, E.

    1979-10-29

    Union Carbide's Plant Energy Cost Optimization Program (POCOP) is saving $500,000 a year at a Taft, Louisiana chemical complex. Day-to-day decisions affecting fuel costs and plant operations are based on a system of computerized data-gathering and processing. Although Carbide's system is not unique, it is more extensive and more comprehensive than the systems used by other chemical companies. The plant has decreased its energy consumption 12% below the 1972 level while increasing production by 30%. The system was initiated in response to the shift from raw materials to energy as the major production cost.

  2. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  3. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, George C.

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  4. Investigation of Carbide Precipitation Process and Chromium Depletion during Thermal Treatment of Alloy 690

    NASA Astrophysics Data System (ADS)

    Jiao, S. Y.; Zhang, M. C.; Zheng, L.; Dong, J. X.

    2010-01-01

    For the purpose of studying the effect of heat treatment on carbide morphology and chromium concentration distribution, which are critical to the resistance of alloy 690 to stress corrosion cracking (SCC), a series of thermal treatments was performed. A model taking into account the intercorrelated dynamic process between the carbide precipitation and chemical diffusion of the chromium atom from matrix to grain boundary (GB) was constructed on the basis of classical nucleation theory, Kolmogorov-Johnson-Mehl-Avrami law, and diffusion theory. The validity of this model was evaluated by comparing the simulated results of the carbide average size and chromium concentration near the GB with the corresponding measured results. A discontinuous factor was introduced based on the relation linking the interdistance between the carbides and the carbide average size; thus, the carbide morphology and chromium concentration could be predicted by this model. According to the results of the experiments and simulations, a carbide discontinuous factor smaller than 2.2 together with the chromium concentration at the GB higher than a critical value (21 wt pct) were essential for the corrosion resistance ability of the alloy, and then some proper heat-treatment conditions were obtained through predicting the value of the two variables. In addition, the effects of the grain size and composition variation on the carbide discontinuous factor and chromium concentration profile were simulated. The results indicated that an intermediate grain size of approximately 31.8 to ~63.5 μm was beneficial for effectively improving the resistance of the alloy to SCC. Simultaneously, the carbon content should be adjusted near 0.02 pct, and the chromium content should be the highest possible in its chemical composition scale.

  5. Carbide/fluoride/silver self-lubricating composite

    NASA Technical Reports Server (NTRS)

    Sliney, Harold E. (Inventor)

    1988-01-01

    A self-lubricating, friction and wear reducing composite material for use over a wide temperature spectrum from cryogenic temperature to about 900.degree. C. in a chemically reactive environment comprising silver, barium fluoride/calcium fluoride eutectic, and metal bonded chromium carbide.

  6. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE PAGES

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

  7. Characterization, shaping, and joining of SiC/superalloy sheet for exhaust system components

    NASA Technical Reports Server (NTRS)

    Cornie, J. A.

    1977-01-01

    Hafnium carbide was shown to be virtually inert when in contact with silicon carbide and Waspaloy for at least 200 hr at 1093 C (2000 F). Extensive interaction was noted with other superalloys such as HA-188. A continuous CVD HfC deposition process was developed for deposition of up to 8 microns on .14 mm (.0056 in.) SiC tungsten core filament at rates as high as .6 m/min. The rate can be increased by increasing the length of the reactor and the output of the power supply used in resistive heating of the filament substrate. The strength of HfC coated filament varies with thickness in a Griffith-like manner. This strength reduction was greater for HfC coatings than for tungsten coatings, presumably because of the greater ductility of tungsten.

  8. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOEpatents

    Glatzmaier, Gregory C.

    1994-01-01

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  9. Carbide coated fibers in graphite-aluminum composites

    NASA Technical Reports Server (NTRS)

    Imprescia, R. J.; Levinson, L. S.; Reiswig, R. D.; Wallace, T. C.; Williams, J. M.

    1975-01-01

    Thin, uniform coats of titanium carbide, deposited on graphite fibers by chemical vapor deposition with thicknesses up to approximately 0.1 microns were shown to improve fiber strength significantly. For greater thicknesses, strength was degraded. The coats promote wetting of the fibers and infiltration of the fiber yarns with aluminum alloys, and act as protective barriers to inhibit reaction between the fibers and the alloys. Chemical vapor deposition was used to produce silicon carbide coats on graphite fibers. In general, the coats were nonuniform and were characterized by numerous surface irregularities. Despite these irregularities, infiltration of these fibers with aluminum alloys was good. Small graphite-aluminum composite samples were produced by vacuum hot-pressing of aluminum-infiltrated graphite yarn at temperatures above the metal liquidus.

  10. Measurements and simulations of boron carbide as degrader material for proton therapy.

    PubMed

    Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

    2016-07-21

    We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute(1). The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

  11. Carbide-fluoride-silver self-lubricating composite

    NASA Technical Reports Server (NTRS)

    Sliney, Harold E. (Inventor)

    1987-01-01

    A self-lubricating, friction and wear reducing composite material is described for use over a wide temperature spectrum from cryogenic temperature to about 900 C in a chemically reactive environment comprising silver, barium fluoride/calcium fluoride eutectic, and metal bonded chromium carbide.

  12. Carbide Precipitation in 2.25 Cr-1 Mo Bainitic Steel: Effect of Heating and Isothermal Tempering Conditions

    NASA Astrophysics Data System (ADS)

    Dépinoy, Sylvain; Toffolon-Masclet, Caroline; Urvoy, Stéphane; Roubaud, Justine; Marini, Bernard; Roch, François; Kozeschnik, Ernst; Gourgues-Lorenzon, Anne-Françoise

    2017-05-01

    The effect of the tempering heat treatment, including heating prior to the isothermal step, on carbide precipitation has been determined in a 2.25 Cr-1 Mo bainitic steel for thick-walled applications. The carbides were identified using their amount of metallic elements, morphology, nucleation sites, and diffraction patterns. The evolution of carbide phase fraction, morphology, and composition was investigated using transmission electron microscopy, X-ray diffraction, as well as thermodynamic calculations. Upon heating, retained austenite into the as-quenched material decomposes into ferrite and cementite. M7C3 carbides then nucleate at the interface between the cementite and the matrix, triggering the dissolution of cementite. M2C carbides precipitate separately within the bainitic laths during slow heating. M23C6 carbides precipitate at the interfaces (lath boundaries or prior austenite grain boundaries) and grow by attracting nearby chromium atoms, which results in the dissolution of M7C3 and, depending on the temperature, coarsening, or dissolution of M2C carbides, respectively.

  13. Controlling the Morphology and Oxidation Resistance of Boron Carbide Synthesized Via Carbothermic Reduction Reaction

    NASA Astrophysics Data System (ADS)

    Ahmed, Yasser M. Z.; El-Sheikh, Said M.; Ewais, Emad M. M.; Abd-Allah, Asmaa A.; Sayed, Said A.

    2017-03-01

    Boron carbide powder was synthesized from boric acid and lactose mixtures via easy procedure. Boric acid and lactose solution mixtures were roasted in stainless steel pot at 280 °C for 24 h. Boron carbide was obtained by heating the roasted samples under flowing of industrial argon gas at 1500 °C for 3 h. The amount of borate ester compound in the roasted samples was highly influenced by the boron/carbon ratio in the starting mixtures and plays a versatile role in the produced boron carbide. The high-purity boron carbide powder was produced with a sample composed of lowest boron/carbon ratio of 1:1 without calcination step. Particle morphology was changed from nano-needles like structure of 8-10 nm size with highest carbon ratio mixture to spherical shape of >150 nm size with lowest one. The oxidation resistance performance of boron carbide is highly dependent on the morphology and grain size of the synthesized powder.

  14. Toxicity of Tungsten Carbide and Cobalt-Doped Tungsten Carbide Nanoparticles in Mammalian Cells in Vitro

    PubMed Central

    Bastian, Susanne; Busch, Wibke; Kühnel, Dana; Springer, Armin; Meißner, Tobias; Holke, Roland; Scholz, Stefan; Iwe, Maria; Pompe, Wolfgang; Gelinsky, Michael; Potthoff, Annegret; Richter, Volkmar; Ikonomidou, Chrysanthy; Schirmer, Kristin

    2009-01-01

    Background Tungsten carbide nanoparticles are being explored for their use in the manufacture of hard metals. To develop nanoparticles for broad applications, potential risks to human health and the environment should be evaluated and taken into consideration. Objective We aimed to assess the toxicity of well-characterized tungsten carbide (WC) and cobaltdoped tungsten carbide (WC-Co) nanoparticle suspensions in an array of mammalian cells. Methods We examined acute toxicity of WC and of WC-Co (10% weight content Co) nanoparticles in different human cell lines (lung, skin, and colon) as well as in rat neuronal and glial cells (i.e., primary neuronal and astroglial cultures and the oligodendro cyte precursor cell line OLN-93). Furthermore, using electron microscopy, we assessed whether nanoparticles can be taken up by living cells. We chose these in vitro systems in order to evaluate for potential toxicity of the nanoparticles in different mammalian organs (i.e., lung, skin, intestine, and brain). Results Chemical–physical characterization confirmed that WC as well as WC-Co nanoparticles with a mean particle size of 145 nm form stable suspensions in serum-containing cell culture media. WC nanoparticles were not acutely toxic to the studied cell lines. However, cytotoxicity became apparent when particles were doped with Co. The most sensitive were astrocytes and colon epithelial cells. Cytotoxicity of WC-Co nanoparticles was higher than expected based on the ionic Co content of the particles. Analysis by electron microscopy demonstrated presence of WC nanoparticles within mammalian cells. Conclusions Our findings demonstrate that doping of WC nanoparticles with Co markedly increases their cytotoxic effect and that the presence of WC-Co in particulate form is essential to elicit this combinatorial effect. PMID:19440490

  15. Effect of nitrogen on tensile properties and structures of T-111 (tantalum, 8 percent tungsten, 2 percent hafnium) tubing

    NASA Technical Reports Server (NTRS)

    Buzzard, R. J.; Metroka, R. R.

    1973-01-01

    The effect of controlled nitrogen additions was evaluated on the mechanical properties of T-111 (Ta-8W-2Hf) fuel pin cladding material proposed for use in a lithium-cooled nuclear reactor concept. Additions of 80 to 1125 ppm nitrogen resulted in increased strengthening of T-111 tubular section test specimens at temperatures of 25 to 1200 C. Homogeneous distributions of up to 500 ppm nitrogen did not seriously decrease tensile ductility. Both single and two-phase microstructures, with hafnium nitride as the second phase, were evaluated in this study.

  16. Study of the Effect of Trace Mg Additions on Carbides in Die Steel H13

    NASA Astrophysics Data System (ADS)

    Li, Ji; Li, Jing; Wang, Liang-liang; Zhu, Qin-tian

    2016-09-01

    Carbides in annealed steel H13 without magnesium and with a micro-addition of magnesium (0.0010%) are studied. Trace amounts of magnesium strengthen carbide segregation and reduce their size. Carbides phases M7C3, M6 C, and M(C, N) are detected in steel H13, and this agrees with results of thermodynamic calculations.

  17. Molybdenum carbides, active and in situ regenerable catalysts in hydroprocessing of fast pyrolysis bio-oil

    DOE PAGES

    Choi, Jae -Soon; Zacher, Alan; Wang, Huamin; ...

    2016-05-19

    This paper describes properties of molybdenum carbides as a potential catalyst for fast pyrolysis bio-oil hydroprocessing. Currently, high catalyst cost, short catalyst lifetime, and lack of effective regeneration methods are hampering the development of this otherwise attractive renewable hydrocarbon technology. A series of metal-doped bulk Mo carbides were synthesized, characterized, and evaluated in sequential low-temperature stabilization and high-temperature deoxygenation of a pine-derived bio-oil. During a typical 60 h run, Mo carbides were capable of upgrading raw bio-oil to a level suitable for direct insertion into the current hydrocarbon infrastructure with residual oxygen content and total acid number of upgraded oilsmore » below 2 wt % and 0.01 mg KOH g –1, respectively. The performance was shown to be sensitive to the type of metal dopant, Ni-doped Mo carbides outperforming Co-, Cu-, or Ca-doped counterparts; a higher Ni loading led to a superior catalytic performance. No bulk oxidation or other significant structural changes were observed. Besides the structural robustness, another attractive property of Mo carbides was in situ regenerability. The effectiveness of regeneration was demonstrated by successfully carrying out four consecutive 60 h runs with a reductive decoking between two adjacent runs. These results strongly suggest that Mo carbides are a good catalyst candidate which could lead to a significant cost reduction in hydroprocessing bio-oils. Furthermore, we highlight areas for future research which will be needed to further understand carbide structure–function relationships and help design practical bio-oil upgrading catalysts based on Mo carbides.« less

  18. Molybdenum Carbides, Active and In Situ Regenerable Catalysts in Hydroprocessing of Fast Pyrolysis Bio-Oil

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Choi, Jae-Soon; Zacher, Alan H.; Wang, Huamin

    We assessed molybdenum carbides as a potential catalyst for fast pyrolysis bio-oil hydroprocessing. Currently, high catalyst cost, short catalyst lifetime, and lack of effective regeneration methods are hampering the development of this otherwise attractive renewable hydrocarbon technology. A series of metal-doped bulk Mo carbides were synthesized, characterized and evaluated in sequential low-temperature stabilization and high-temperature deoxygenation of a pine-derived bio-oil. During a typical 60-h run, Mo carbides were capable of upgrading raw bio-oil to a level suitable for direct insertion into the current hydrocarbon infrastructure with residual oxygen content and total acid number of upgraded oils below 2 wt% andmore » 0.01 mg KOH g-1, respectively. The performance was shown to be sensitive to the type of metal dopant, Ni-doped Mo carbides outperforming Co-, Cu-, or Ca-doped counterparts; a higher Ni loading led to a superior catalytic performance. No bulk oxidation or other significant structural changes were observed. Besides the structural robustness, another attractive property of Mo carbides was in situ regenerability. The effectiveness of regeneration was demonstrated by successfully carrying out four consecutive 60-h runs with a reductive decoking between two adjacent runs. These results strongly suggest that Mo carbides are promising catalytic materials which could lead to a significant cost reduction in hydroprocessing bio-oils. This paper highlights areas for future research which will be needed to further understand carbide structure-function relationships and help design practical bio-oil upgrading catalysts based on Mo carbides.« less

  19. Molybdenum carbides, active and in situ regenerable catalysts in hydroprocessing of fast pyrolysis bio-oil

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Choi, Jae -Soon; Zacher, Alan; Wang, Huamin

    This paper describes properties of molybdenum carbides as a potential catalyst for fast pyrolysis bio-oil hydroprocessing. Currently, high catalyst cost, short catalyst lifetime, and lack of effective regeneration methods are hampering the development of this otherwise attractive renewable hydrocarbon technology. A series of metal-doped bulk Mo carbides were synthesized, characterized, and evaluated in sequential low-temperature stabilization and high-temperature deoxygenation of a pine-derived bio-oil. During a typical 60 h run, Mo carbides were capable of upgrading raw bio-oil to a level suitable for direct insertion into the current hydrocarbon infrastructure with residual oxygen content and total acid number of upgraded oilsmore » below 2 wt % and 0.01 mg KOH g –1, respectively. The performance was shown to be sensitive to the type of metal dopant, Ni-doped Mo carbides outperforming Co-, Cu-, or Ca-doped counterparts; a higher Ni loading led to a superior catalytic performance. No bulk oxidation or other significant structural changes were observed. Besides the structural robustness, another attractive property of Mo carbides was in situ regenerability. The effectiveness of regeneration was demonstrated by successfully carrying out four consecutive 60 h runs with a reductive decoking between two adjacent runs. These results strongly suggest that Mo carbides are a good catalyst candidate which could lead to a significant cost reduction in hydroprocessing bio-oils. Furthermore, we highlight areas for future research which will be needed to further understand carbide structure–function relationships and help design practical bio-oil upgrading catalysts based on Mo carbides.« less

  20. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    PubMed Central

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-01-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air. PMID:26831205

  1. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    PubMed

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-02

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  2. Reactions of water and C1 molecules on carbide and metal-modified carbide surfaces

    DOE PAGES

    Wan, Weiming; Tackett, Brian M.; Chen, Jingguang G.

    2017-02-23

    The formation of carbides can significantly modify the physical and chemical properties of the parent metals. In the current review, we summarize the general trends in the reactions of water and C1 molecules over transition metal carbide (TMC) and metal-modified TMC surfaces and thin films. Although the primary focus of the current review is on the theoretical and experimental studies of reactions of C1 molecules (CO, CO 2, CH 3OH, etc.), the reactions of water will also be reviewed because water plays an important role in many of the C1 transformation reactions. This review is organized by discussing separately thermalmore » reactions and electrochemical reactions, which provides insights into the application of TMCs in heterogeneous catalysis and electrocatalysis, respectively. In thermal reactions, we discuss the thermal decomposition of water and methanol, as well as the reactions of CO and CO 2 over TMC surfaces. In electrochemical reactions, we summarize recent studies in the hydrogen evolution reaction, electrooxidation of methanol and CO, and electroreduction of CO 2. Lastly, future research opportunities and challenges associated with using TMCs as catalysts and electrocatalysts are also discussed.« less

  3. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

    DOE PAGES

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; ...

    2017-02-13

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf 1-xZr xO 2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm -2K -1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarizationmore » (x = 0, 0.91, 1).« less

  4. The dependence of carbide morphology on grain boundary character in the highly twinned Alloy 690

    NASA Astrophysics Data System (ADS)

    Li, Hui; Xia, Shuang; Zhou, Bangxin; Chen, Wenjue; Hu, Changliang

    2010-04-01

    The dependence of morphology of grain boundary carbides on grain boundary character in Alloy 690 (Ni-30Cr-10Fe, mass fraction, %) with high fraction of low Σ coincidence site lattice (CSL) grain boundaries was investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Some of the surface grains were removed by means of deep etching. It was observed that carbides grow dendritically at grain boundaries. The carbide bars observed near incoherent twin boundaries and twin related Σ9 grain boundaries are actually secondary dendrites of the carbides on these boundaries. Higher order dendrites could be observed on random grain boundaries, however, no bar-like dendrites were observed near Σ27 grain boundaries and random grain boundaries. The morphology difference of carbides precipitated at grain boundaries with different characters is discussed based on the experimental results in this paper.

  5. Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

    DTIC Science & Technology

    2017-03-01

    Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed- Energy Capability Damian Urciuoli, Miguel Hinojosa, and Ronald Green US...were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed- energy dissipation was kept nearly the same among the...voltages about which design provides the highest pulsed- energy capability. Keywords: Avalanche; Breakdown; Diode; Silicon Carbide Introduction

  6. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  7. SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

    DTIC Science & Technology

    2010-06-08

    DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES Presented at Mirror Technology Days, Boulder...coatings. 15. SUBJECT TERMS Mirrors , structures, silicon carbide, design, inserts, coatings, pockets, ribs, bonding, threads 16. SECURITY...Prescribed by ANSI Std. 239.18 purify protect transport SiC Design Guide Manufacture of Silicon Carbide Products Mirror Technology Days June 7 to 9, 2010

  8. Silicon Carbide Transistor For Detecting Hydrocarbon Gases

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B.; Ryan, Margaret A.; Williams, Roger M.

    1996-01-01

    Proposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.

  9. Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

    NASA Astrophysics Data System (ADS)

    Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

    2015-09-01

    Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

  10. Metal-Element Compounds of Titanium, Zirconium, and Hafnium as Pyrotechnic Fuels

    DTIC Science & Technology

    2015-05-04

    including ceramic materials in this role has been far less common. Following the development of boron carbide-based pyrotechnics in our laboratories, we...ameliorate these problems. Commercially available group 4 compounds containing hydrogen, boron , carbon, nitrogen, silicon, and phosphorus were obtained for...predicted behavior suggests that these compounds may be useful for a variety of pyrotechnic applications. 1. INTRODUCTION The recent use of boron

  11. Titanium carbide particles as pre-solar grains

    NASA Astrophysics Data System (ADS)

    Kimura, Y.; Kaito, C.

    2003-08-01

    Focusing on the growth of metal carbide particles and the formation of pre-solar grains, a new attempt has been made for titanium carbide (TiC) systems. Using the noble gas evaporation method, we succeeded in producing TiC core (50-nm) carbon mantle (2-nm) grains of the same core size as pre-solar grains. The infrared spectrum has broad absorption features at 9.5 and 12.5 μm. It was also found that these absorption peaks became weaker by an increase to 15 nm of carbon mantle layer. The determination method of the contact angle of carbon on the TiC grain has been developed using a high-resolution electron microscopic technique. The contact angles between TiC and carbon were and on the (111) and (100) TiC grain surfaces, respectively.

  12. First principles study of intrinsic defects in hexagonal tungsten carbide

    NASA Astrophysics Data System (ADS)

    Kong, Xiang-Shan; You, Yu-Wei; Xia, J. H.; Liu, C. S.; Fang, Q. F.; Luo, G.-N.; Huang, Qun-Ying

    2010-11-01

    The characteristics of intrinsic defects are important for the understanding of self-diffusion processes, mechanical strength, brittleness, and plasticity of tungsten carbide, which are present in the divertor of fusion reactors. Here, we use first-principles calculations to investigate the stability of point defects and their complexes in tungsten carbide. Our results confirm that the defect formation energies of carbon are much lower than that of tungsten and reveal the carbon vacancy to be the dominant defect in tungsten carbide. The C sbnd C dimer configuration along the dense a direction is the most stable configuration of carbon interstitial defect. The results of carbon defect diffusion show that the carbon vacancy stay for a wide range of temperature because of extremely high diffusion barriers, while carbon interstitial migration is activated at lower temperatures for its considerably lower activation energy. Both of them prefer to diffusion in carbon basal plane.

  13. Surface Figure Measurement of Silicon Carbide Mirrors at Cryogenic Temperatures

    NASA Technical Reports Server (NTRS)

    Blake, Peter; Mink, Ronald G.; Chambers, John; Robinson, F. David; Content, David; Davila, Pamela

    2005-01-01

    The surface figure of a developmental silicon carbide mirror, cooled to 87 K and then 20 K within a cryostat, was measured with unusually high precision at the Goddard Space Flight Center (GSFC). The concave spherical mirror, with a radius of 600 mm and a clear aperture of 150 mm, was fabricated of sintered silicon carbide. The mirror was mounted to an interface plate representative of an optical bench, made of the material Cesic@, a composite of silicon, carbon, and silicon carbide. The change in optical surface figure as the mirror and interface plate cooled from room temperature to 20 K was 3.7 nm rms, with a standard uncertainty of 0.23 nm in the rms statistic. Both the cryo-change figure and the uncertainty are among the lowest such figures yet published. This report describes the facilities, experimental methods, and uncertainty analysis of the measurements.

  14. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Boccard, Mathieu; Holman, Zachary C.

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  15. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Boccard, Mathieu; Holman, Zachary C.

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  16. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE PAGES

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  17. Barrier properties of nano silicon carbide designed chitosan nanocomposites.

    PubMed

    Pradhan, Gopal C; Dash, Satyabrata; Swain, Sarat K

    2015-12-10

    Nano silicon carbide (SiC) designed chitosan nanocomposites were prepared by solution technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were used for studying structural interaction of nano silicon carbide (SiC) with chitosan. The morphology of chitosan/SiC nanocomposites was investigated by field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). The thermal stability of chitosan was substantially increased due to incorporation of stable silicon carbide nanopowder. The oxygen permeability of chitosan/SiC nanocomposites was reduced by three folds as compared to the virgin chitosan. The chemical resistance properties of chitosan were enhanced due to the incorporation of nano SiC. The biodegradability was investigated using sludge water. The tensile strength of chitosan/SiC nanocomposites was increased with increasing percentage of SiC. The substantial reduction in oxygen barrier properties in combination with increased thermal stability, tensile strength and chemical resistance properties; the synthesized nanocomposite may be suitable for packaging applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

  18. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  19. Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

    2013-06-01

    Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

  20. Porosity control in nanoporous carbide-derived carbon by oxidation in air and carbon dioxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Osswald, S.; Portet, C.; Gogotsi, Y., E-mail: gogotsi@drexel.ed

    2009-07-15

    Carbide-derived carbons (CDC) allow a precise control over the pore size through the selection of the carbide precursor and varying of the synthesis conditions. However, their pore volume is limited by the carbide stoichiometry. While activation of carbons derived from various organic precursors has been widely studied, this process may similarly be able to increase the pore volume and specific surface area of CDC. Oxidation of carbide-derived carbon in air and CO{sub 2} at different temperatures and times allows for significant increase in pore volume and specific surface area as well as control over average pore size with subnanometer accuracy.more » The effect of activation and associated changes in the pore volume and surface area on the hydrogen uptake are also discussed. - Graphical abstract: Carbide-derived carbons (CDC) provide great potential for sorption of toxicants and gas storage applications. Activation of CDC in air and CO{sub 2} at different temperatures and times is applied in order to maximize pore volume and specific surface area, and control the average pore size with subnanometer accuracy.« less

  1. Amorphous silicon carbide coatings for extreme ultraviolet optics

    NASA Technical Reports Server (NTRS)

    Kortright, J. B.; Windt, David L.

    1988-01-01

    Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

  2. Effect of carbide precipitation on the corrosion behavior of Inconel alloy 690

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sarver, J.M.; Crum, J.R.; Mankins, W.L.

    1987-01-01

    Intergranular carbide precipitation reactions have been shown to affect the stress corrosion cracking (SCC) resistance of nickel-chromium-iron alloys in environments relative to nuclear steam generators. Carbon solubility curves, time-temperature-sensitization plots and other carbide precipitation data are presented for alloy 690 as an aid in developing heat treatments for improved SCC resistance.

  3. Ultrathin fiber poly-3-hydroxybutyrate, modified by silicon carbide nanoparticles

    NASA Astrophysics Data System (ADS)

    Olkhov, A. A.; Krutikova, A. A.; Goldshtrakh, M. A.; Staroverova, O. V.; Iordanskii, A. L.; Ischenko, A. A.

    2016-11-01

    The article presents the results of studies the composite fibrous material based on poly-3-hydroxybutyrate (PHB) and nano-size silicon carbide obtained by the electrospinning method. Size distribution of the silicon carbide nanoparticles in the fiber was estimated by X-ray diffraction technique. It is shown that immobilization of the SiC nanoparticles to the PHB fibers contributes to obtaining essentially smaller diameter of fibers, high physical-mechanical characteristics and increasing resistance to degradation in comparison with the fibers of PHB.

  4. Wear and corrosion behaviour of tungsten carbide based coatings with different metallic binder

    NASA Astrophysics Data System (ADS)

    Kamdi, Z.; Apandi, M. N. M.; Ibrahim, M. D.

    2017-12-01

    Tungsten carbide based coating has been well known as wear and corrosion resistance materials. However, less study is done on comparing the coating with different binder. Thus, in this work the wear and corrosion behaviour of high velocity oxy-fuel (HVOF) coatings, namely (i) tungsten carbide cobalt and (ii) tungsten carbide nickel will be evaluated. Both coatings were characterised using X-ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The wear behaviour has been examined using the modified grinder machine by weight loss measurement. Two types of abrasive have been used that include 3 g by weight alumina and silica. While for the corrosion behaviour, it is monitored by three electrodes of electrochemical test and immersion test for 30 days in an acidic environment. The electrolyte used was 0.5 M sulphuric acids (H2SO4). It was found that the cobalt binder shows higher wear resistance compares to the nickel binder for both slurry types. The harder alumina compared to silica results in higher wear rate with removal of carbide and binder is about the same rate. For silica abrasive, due to slightly lower hardness compared to the carbide, the wear is dominated by binder removal followed by carbide detachment. For corrosion, the nickel binder shows four times higher wear resistance compared to the cobalt binder as expected due to its natural behaviour. These finding demonstrate that the selection of coating to be used in different application in this case, wear and corrosion shall be chosen carefully to maximize the usage of the coating.

  5. Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

    NASA Astrophysics Data System (ADS)

    Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

    2018-05-01

    Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

  6. Wear particles of single-crystal silicon carbide in vacuum

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

  7. Ceramic composites reinforced with modified silicon carbide whiskers

    DOEpatents

    Tiegs, Terry N.; Lindemer, Terrence B.

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  8. Characterization of transition carbides in quench and partitioned steel microstructures by Mössbauer spectroscopy and complementary techniques

    DOE PAGES

    Pierce, D. T.; Coughlin, D. R.; Williamson, D. L.; ...

    2015-05-01

    Quenching and partitioning (Q&P) produces steel microstructures with martensite and austenite that exhibit promising property combinations for third generation advanced high strength steels. Understanding the kinetics of reactions that compete for available carbon, such as carbide formation, is critical for alloying and processing design and achieving austenite enrichment and retention during Q&P. Mössbauer effect spectroscopy (MES) was used to characterize Q&P microstructures in a 0.38C-1.54Mn-1.48Si wt.% steel after quenching to 225 °C and partitioning at 400 °C for 10 or 300 s, with an emphasis on transition carbides. The recoilless fraction for η-carbide was calculated and a correction for saturationmore » of the MES absorption spectrum was applied, making quantitative measurements of small amounts of η-carbide, including non-stoichiometric η-carbide, possible in Q&P microstructures. Complementary transmission electron microscopy confirmed the presence of η-carbides, and MES and X-ray diffraction were used to characterize the austenite. The amount of η-carbide formed during Q&P ranged from 1.4 to 2.4 at.%, accounting for a substantial portion (~24% to 41%) of the bulk carbon content of the steel. The amount (5.0 at.%) of η-carbide that formed after quenching and tempering (Q&T) at 400 °C for 300 s was significantly greater than after partitioning at 400 °C for 300 s (2.4 at.%), suggesting that carbon partitioning from martensite to austenite occurs in conjunction with η-carbide formation during Q&P in these specimens.« less

  9. Elevated Temperature Properties of Titanium Carbide Base Ceramals Containing Nickel or Iron

    NASA Technical Reports Server (NTRS)

    Cooper, A L; Colteryahn, L E

    1951-01-01

    Elevated-temperature properties of titanium carbide base ceramals containing nickel or iron were determined in oxidation, modulus of rupture, tensile strength, and thermal-shock resistance. These materials followed the general growth law and exhibited two stages in oxidation. The following tensile strengths were found at 2000 degrees F: 13.3 weight percent nickel, 16, 150 pounds per square inch; 11.8 weight percent iron, 12,500 pounds per square inch; unalloyed titanium carbide, 16,450 pounds per square inch. Nickel or iron additions to titanium carbide improved the thermal-shock resistance, nickel more. The path of fracture in tensile and thermal-shock specimens was found to progress approximately 50 percent intergranularly and 50 percent transgranularly.

  10. MC carbide structures in M(lc2)ar-M247. M.S. Thesis - Final Report

    NASA Technical Reports Server (NTRS)

    Wawro, S. W.

    1982-01-01

    The morphologies and distribution of the MC carbides in Mar-M247 ingot stock and castings were investigated using metallographic, X-ray diffraction and energy-dispersive X-ray analysis techniques. The MC carbides were found to form script structures during solidification. The script structures were composed of three distinct parts. The central cores and elongated arms of the MC carbide script structures had compositions (Ti, Cr, Hf, Ta, W)C and lattice parameters of 4.39 A. The elongated script arms terminated in enlarged, angular "heads". The heads had compositions (Ti, Hf, Ta, W)C and lattice parameters of approximately 4.50 A. The heads had a higher Hf content than the cores and arms. The size of the script structures, as well as the relative amount of head-type to core and arm-type MC carbide, was found to be determined by solidification conditions. No carryover of the MC carbides from the ingot stock to the remelted and cast material was observed.

  11. Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

    NASA Astrophysics Data System (ADS)

    Mora, M.; Vera, E.; Aperador, W.

    2016-02-01

    In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

  12. Silicon carbide nanomaterial as a coating for solid-phase microextraction.

    PubMed

    Tian, Yu; Feng, Juanjuan; Wang, Xiuqin; Sun, Min; Luo, Chuannan

    2018-01-26

    Silicon carbide has excellent properties, such as corrosion resistance, high strength, oxidation resistance, high temperature, and so on. Based on these properties, silicon carbide was coated on stainless-steel wire and used as a solid-phase microextraction coating, and polycyclic aromatic hydrocarbons were employed as model analytes. Using gas chromatography, some important factors that affect the extraction efficiency were optimized one by one, and an analytical method was established. The analytical method showed wide linear ranges (0.1-30, 0.03-30, and 0.01-30 μg/L) with satisfactory correlation coefficients (0.9922-0.9966) and low detection limits (0.003-0.03 μg/L). To investigate the practical application of the method, rainwater and cigarette ash aqueous solution were collected as real samples for extraction and detection. The results indicate that silicon carbide has excellent application in the field of solid-phase microextraction. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Synthesis of High Symmetry Phase of Hafnium Dioxide Thin Films and Nickel Ferrite's Effect on Microstructure in Composite Heterostructure

    NASA Astrophysics Data System (ADS)

    Straka, Weston J.

    Hafnium dioxide has attracted a great deal of attention recently due to its potential use in two different electronic applications: CMOS and FeRAM. In CMOS, the usefulness of hafnia comes in due to its high dielectric constant and compatibility with current IC processing parameters. For FeRAM, hafnia's recent discovery to exhibit ferroelectricity in an orthorhombic phase makes this material attractive for replacement of the ferroelectric material in FeRAM. This study shows the feasibility of depositing thin films of hafnium oxide via chemical solution deposition for integration into these devices. The processing parameters necessary to produce this phase show how non-equilibrium processing plays a role in its synthesis. The temperature necessary to achieve the high symmetry phase was at 725 °C for 3 minutes on sapphire, silicon, and coated silicon substrates. The thermal conductivity of each was viewed as the property that allowed the hafnia formation. The dielectric constant of the hafnia films were between 30 and 32 with low dissipation factors and up to 47 with a poor dissipation factor all at 1 kHz. The formation of this phase was shown to be thickness independent with the high symmetry phase existing up to 300 nm film thickness. Interfacing the hafnia film with nickel ferrite was also studied to identify the possibility of using this composite for non-destructive reading of FeRAM. The magnetic properties showed an unchanged nickel ferrite film but the interface between the two was poor leading to the conclusion that more work must be done to successfully integrate these two films.

  14. Progress in silicon carbide semiconductor technology

    NASA Technical Reports Server (NTRS)

    Powell, J. A.; Neudeck, P. G.; Matus, L. G.; Petit, J. B.

    1992-01-01

    Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.

  15. Ultrasonic ranking of toughness of tungsten carbide

    NASA Technical Reports Server (NTRS)

    Vary, A.; Hull, D. R.

    1983-01-01

    The feasibility of using ultrasonic attenuation measurements to rank tungsten carbide alloys according to their fracture toughness was demonstrated. Six samples of cobalt-cemented tungsten carbide (WC-Co) were examined. These varied in cobalt content from approximately 2 to 16 weight percent. The toughness generally increased with increasing cobalt content. Toughness was first determined by the Palmqvist and short rod fracture toughness tests. Subsequently, ultrasonic attenuation measurements were correlated with both these mechanical test methods. It is shown that there is a strong increase in ultrasonic attenuation corresponding to increased toughness of the WC-Co alloys. A correlation between attenuation and toughness exists for a wide range of ultrasonic frequencies. However, the best correlation for the WC-Co alloys occurs when the attenuation coefficient measured in the vicinity of 100 megahertz is compared with toughness as determined by the Palmqvist technique.

  16. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    NASA Technical Reports Server (NTRS)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  17. Electrons, phonons and superconductivity in rocksalt and tungsten-carbide phases of CrC.

    PubMed

    Tütüncü, H M; Baǧcı, S; Srivastava, G P; Akbulut, A

    2012-11-14

    We present results of ab initio theoretical investigations of the electronic structure, phonon dispersion relations, electron-phonon interaction and superconductivity in the rocksalt and tungsten-carbide phases of CrC. It is found that, compared to the stable tungsten-carbide phase, the metastable rocksalt phase is characterized by a much larger electronic density of states at the Fermi level. The phonon spectra of the rocksalt phase exhibit anomalies in the dispersion curves of both the transverse and longitudinal acoustic branches along the main symmetry directions. A combination of these characteristic electronic and phonon properties leads to an order of magnitude larger value of the electron-phonon coupling constant (λ = 2.66) for the rocksalt phase compared to that for the tungsten-carbide phase (λ = 0.24). Our calculations suggest that superconducting transition temperature values of 0.01 K and 25-35 K may be expected for the tungsten-carbide and rocksalt phases, respectively.

  18. Fractographic Analysis of HfB2-SiC and ZrB2-SiC Composites

    NASA Technical Reports Server (NTRS)

    Mecholsky, J.J., Jr.; Ellerby, D. T.; Johnson, S. M.; Stackpoole, M. M.; Loehman, R. E.; Arnold, Jim (Technical Monitor)

    2001-01-01

    Hafnium diboride-silicon carbide and zirconium diboride-silicon carbide composites are potential materials for high temperature leading edge applications on reusable launch vehicles. In order to establish material constants necessary for evaluation of in-situ fracture, bars fractured in four point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values, and the crack branching constants were established to use in forensic fractography of materials for future flight applications. The fracture toughnesses range from about 13 MPam (sup 1/2) at room temperature to about 6 MPam (sup 1/2) at 1400 C for ZrB2-SiC composites and from about 11 MPam (sup 1/2) at room temperature to about 4 MPam (sup 1/2) at 1400 C for HfB2-SiC composites.

  19. Hafnium Films and Magnetic Shielding for TIME, A mm-Wavelength Spectrometer Array

    NASA Astrophysics Data System (ADS)

    Hunacek, J.; Bock, J.; Bradford, C. M.; Butler, V.; Chang, T.-C.; Cheng, Y.-T.; Cooray, A.; Crites, A.; Frez, C.; Hailey-Dunsheath, S.; Hoscheit, B.; Kim, D. W.; Li, C.-T.; Marrone, D.; Moncelsi, L.; Shirokoff, E.; Steinbach, B.; Sun, G.; Trumper, I.; Turner, A.; Uzgil, B.; Weber, A.; Zemcov, M.

    2018-04-01

    TIME is a mm-wavelength grating spectrometer array that will map fluctuations of the 157.7-μm emission line of singly ionized carbon ([CII]) during the epoch of reionization (redshift z ˜ 5-9). Sixty transition-edge sensor (TES) bolometers populate the output arc of each of the 32 spectrometers, for a total of 1920 detectors. Each bolometer consists of gold absorber on a ˜ 3 × 3 mm silicon nitride micro-mesh suspended near the corners by 1 × 1 × 500 μm silicon nitride legs targeting a photon-noise-dominated NEP ˜ 1 × 10^{-17} W/√{Hz} . Hafnium films are explored as a lower-T_c alternative to Ti (500 mK) for TIME TESs, allowing thicker support legs for improved yield. Hf T_c is shown to vary between 250 and 450 mK when varying the resident Ar pressure during deposition. Magnetic shielding designs and simulations are presented for the TIME first-stage SQUIDs. Total axial field suppression is predicted to be 5 × 10^7.

  20. Two-Dimensional Titanium Carbide (MXene) as Surface-Enhanced Raman Scattering Substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sarycheva, Asia; Makaryan, Taron; Maleski, Kathleen

    Here, noble metal (gold or silver) nanoparticles or patterned films are typically used as substrates for surface-enhanced Raman spectroscopy (SERS). Two-dimensional (2D) carbides and nitrides (MXenes) exhibit unique electronic and optical properties, including metallic conductivity and plasmon resonance in the visible or near-infrared range, making them promising candidates for a wide variety of applications. Herein, we show that 2D titanium carbide, Ti 3C 2T x, enhances Raman signal from organic dyes on a substrate and in solution. As a proof of concept, MXene SERS substrates were manufactured by spray-coating and used to detect several common dyes, with calculated enhancement factorsmore » reaching ~10 6. Titanium carbide MXene demonstrates SERS effect in aqueous colloidal solutions, suggesting the potential for biomedical or environmental applications, where MXene can selectively enhance positively charged molecules.« less

  1. Silicon Carbide Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2006-01-01

    Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

  2. Infrared Optics Hot Pressed From Fluoride Glass

    NASA Astrophysics Data System (ADS)

    Turk, R. R.

    1982-02-01

    Optical figured surfaces were formed directly by hot pressing a fluoride glass in a closed die of tungsten carbide. Microduplication of the surface finish was also obtained. A glass composed of the fluorides of barium, thorium and zirconium or hafnium, and transmitting into the infrared out to 8 microns was press formed into an optical flat above its softening temperature and below its crystallization temperature. Also, small vitreous pieces were consolidated into larger pieces under moderate heat and pressure, thus avoiding the crystallization which occurs in large batches cooled from the melt.

  3. Sulfur-Tolerant Molybdenum Carbide Catalysts Enabling Low-Temperature Stabilization of Fast Pyrolysis Bio-oil

    DOE PAGES

    Li, Zhenglong; Choi, Jae-Soon; Wang, Huamin; ...

    2017-08-18

    Low-temperature hydrogenation of carbonyl fractions can greatly improve the thermal stability of fast pyrolysis bio-oil which is crucial to achieve long-term operation of high-temperature upgrading reactors. The current state of the art, precious metals such as ruthenium, although highly effective in carbonyl hydrogenation, rapidly loses performance due to sulfur sensitivity. The present work showed that molybdenum carbides were active and sulfur-tolerant in low-temperature conversion carbonyl compounds. Furthermore, due to surface bifunctionality (presence of both metallic and acid sites), carbides catalyzed both C=O bond hydrogenation and C-C coupling reactions retaining most of carbon atoms in liquid products as more stable andmore » higher molecular weight oligomeric compounds while consuming less hydrogen than ruthenium. The carbides proved to be resistant to other deactivation mechanisms including hydrothermal aging, oxidation, coking and leaching. These properties enabled carbides to achieve and maintain good catalytic performance in both aqueous-phase furfural conversion and real bio-oil stabilization with sulfur present. This finding strongly suggests that molybdenum carbides can provide a catalyst solution necessary for the development of commercially viable bio-oil stabilization technology.« less

  4. Sulfur-Tolerant Molybdenum Carbide Catalysts Enabling Low-Temperature Stabilization of Fast Pyrolysis Bio-oil

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Zhenglong; Choi, Jae-Soon; Wang, Huamin

    Low-temperature hydrogenation of carbonyl fractions can greatly improve the thermal stability of fast pyrolysis bio-oil which is crucial to achieve long-term operation of high-temperature upgrading reactors. The current state of the art, precious metals such as ruthenium, although highly effective in carbonyl hydrogenation, rapidly loses performance due to sulfur sensitivity. The present work showed that molybdenum carbides were active and sulfur-tolerant in low-temperature conversion carbonyl compounds. Furthermore, due to surface bifunctionality (presence of both metallic and acid sites), carbides catalyzed both C=O bond hydrogenation and C-C coupling reactions retaining most of carbon atoms in liquid products as more stable andmore » higher molecular weight oligomeric compounds while consuming less hydrogen than ruthenium. The carbides proved to be resistant to other deactivation mechanisms including hydrothermal aging, oxidation, coking and leaching. These properties enabled carbides to achieve and maintain good catalytic performance in both aqueous-phase furfural conversion and real bio-oil stabilization with sulfur present. This finding strongly suggests that molybdenum carbides can provide a catalyst solution necessary for the development of commercially viable bio-oil stabilization technology.« less

  5. Protective coating for alumina-silicon carbide whisker composites

    DOEpatents

    Tiegs, Terry N.

    1989-01-01

    Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

  6. X-Ray photoelectron spectroscopy study of radiofrequency-sputtered titanium, carbide, molybdenum carbide, and titanium boride coatings and their friction properties

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1977-01-01

    Radiofrequency sputtered coatings of titanium carbide, molybdenum carbide and titanium boride were tested as wear resistant coatings on stainless steel in a pin on disk apparatus. X-ray photoelectron spectroscopy (XPS) was used to analyze the sputtered films with regard to both bulk and interface composition in order to obtain maximum film performance. Significant improvements in friction behavior were obtained when properly biased films were deposited on deliberately preoxidized substrates. XPS depth profile data showed thick graded interfaces for bias deposited films even when adherence was poor. The addition of 10 percent hydrogen to the sputtering gas produced coatings with thin poorly adherent interfaces. Results suggest that some of the common practices in the field of sputtering may be detrimental to achieving maximum adherence and optimum composition for these refractory compounds.

  7. Emission of blue light from hydrogenated amorphous silicon carbide

    NASA Astrophysics Data System (ADS)

    Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

    1994-04-01

    THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

  8. Disorder and defects are not intrinsic to boron carbide

    NASA Astrophysics Data System (ADS)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  9. Flaw imaging and ultrasonic techniques for characterizing sintered silicon carbide

    NASA Technical Reports Server (NTRS)

    Baaklini, George Y.; Abel, Phillip B.

    1987-01-01

    The capabilities were investigated of projection microfocus x-radiography, ultrasonic velocity and attenuation, and reflection scanning acoustic microscopy for characterizing silicon carbide specimens. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room temperature, four point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography and acoustic microscopy for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined.

  10. Precipitation of Carbides in Early Aging Stages and Their Crystallographic Orientations in Hadfield Steel Mn13

    NASA Astrophysics Data System (ADS)

    Ding, Zhimin; Liang, Bo; Zhao, Ruirong; Chen, Chunhuan

    2015-05-01

    The methods of transmission electron microscopy (TEM) and electron diffraction are used to study the carbides precipitated in Hadfield steel Mn13 during 2-h aging at 475°C. It is shown that carbides of types (Fe, Mn, Cr)23C6 and mixed (Fe, Mn, Cr)7C3 + (Fe, Mn, Cr)3C precipitate simultaneously over austenite grain boundaries. The data on precipitation of M23C- and M7C3-type carbides in a Hadfield steel after water quenching and aging are pioneer ones. Strict orientation relations of the M23C6 carbides and of the austenite matrix are determined.

  11. Electrodeposition of Refractory Carbide Coatings.

    DTIC Science & Technology

    1982-12-30

    refractory carbide coatings from molten salts is described. It consists of the simultaneous reduction of the appropriate metal species dissolved in the...Electrodeposition Molden salts 20. ASSTRACT (Continue an reve.e. 0g.. It necooom wed identify bp block nu.be) A novel method for electrodepositing...respectively. Electrolysis resulted in the formation of millimeter-size crystals on the walls of the graphite crucible which served as the cathode. Analysis of

  12. Evaluation of silicon carbide fiber/titanium composites

    NASA Technical Reports Server (NTRS)

    Jech, R. W.; Signorelli, R. A.

    1979-01-01

    Izod impact, tensile, and modulus of elasticity were determined for silicon carbide fiber/titanium composites to evaluate their potential usefulness as substitutes for titanium alloys or stainless steel in stiffness critical applications for aircraft turbine engines. Variations in processing conditions and matrix ductility were examined to produce composites having good impact strength in both the as-fabricated condition and after air exposure at elevated temperature. The impact strengths of composites containing 36 volume percent silicon carbide (SiC) fiber in an unalloyed (A-40) titanium matrix were found to be equal to unreinforced titanium-6 aluminum-4 vanadium alloy; the tensile strengths of the composites were marginally better than the unreinforced unalloyed (A-70) matrix at elevated temperature, though not at room temperature. At room temperature the modulus of elasticity of the composites was 48 percent higher than titanium or its alloys and 40 percent higher than that of stainless steel.

  13. Laser-induced phase separation of silicon carbide

    PubMed Central

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-01-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

  14. Modeling of point defects and rare gas incorporation in uranium mono-carbide

    NASA Astrophysics Data System (ADS)

    Chartier, A.; Van Brutzel, L.

    2007-02-01

    An embedded atom method (EAM) potential has been established for uranium mono-carbide. This EAM potential was fitted on structural properties of metallic uranium and uranium mono-carbide. The formation energies of point defects, as well as activation energies for self migration, have been evaluated in order to cross-check the suitability of the potential. Assuming that the carbon vacancies are the main defects in uranium mono-carbide compounds, the migration paths and energies are consistent with experimental data selected by Catlow[C.R.A. Catlow, J. Nucl. Mater. 60 (1976) 151]. The insertion and migration energies for He, Kr and Xe have also been evaluated with available inter-atomic potentials [H.H. Andersen, P. Sigmund, Nucl. Instr. and Meth. B 38 (1965) 238]. Results show that the most stable defect configuration for rare gases is within uranium vacancies. The migration energy of an interstitial Xe is 0.5 eV, in agreement with the experimental value of 0.5 eV [Hj. Matzke, Science of advanced LMFBR fuels, Solid State Physics, Chemistry and Technology of Carbides, Nitrides and Carbonitrides of Uranium and Plutonium, North-Holland, 1986].

  15. Tracing the history of submarine hydrothermal inputs and the significance of hydrothermal hafnium for the seawater budget - A combined Pb-Hf-Nd isotope approach

    USGS Publications Warehouse

    van de Flierdt, T.; Frank, M.; Halliday, A.N.; Hein, J.R.; Hattendorf, B.; Gunther, D.; Kubik, P.W.

    2004-01-01

    Secular variations in the Pb isotopic composition of a mixed hydrogenous-hydrothermal ferromanganese crust from the Bauer Basin in the eastern Equatorial Pacific provide clear evidence for changes in hydrothermal contributions during the past 7 Myr. The nearby Galapagos Rise spreading center provided a strong hydrothermal flux prior to 6.5 Ma. After 6.5 Ma, the Pb became stepwise more radiogenic and more similar to Equatorial Pacific seawater, reflecting the westward shift of spreading to the presently active East Pacific Rise (EPR). A second, previously unrecognized enhanced hydrothermal period occurred between 4.4 and 2.9 Ma, which reflects either off-axis hydrothermal activity in the Bauer Basin or a late-stage pulse of hydrothermal Pb from the then active, but waning Galapagos Rise spreading center. Hafnium isotope time-series of the same mixed hydrogenous-hydrothermal crust show invariant values over the past 7 Myr. Hafnium isotope ratios, as well as Nd isotope ratios obtained for this crust, are identical to that of hydrogenous Equatorial Pacific deep water crusts and clearly indicate that hydrothermal Hf, similar to Nd, does not travel far from submarine vents. Therefore, we suggest that hydrothermal Hf fluxes do not contribute significantly to the global marine Hf budget. ?? 2004 Elsevier B.V. All rights reserved.

  16. Mechanical Property Evaluation at Elevated Temperatures of Sintered Beta Silicon Carbide.

    DTIC Science & Technology

    1986-03-01

    a co mercial- sintered product. 1-7 It is fabricated from a submicron (beta) silicon carbide powder with small additions (f-0.5 wtZ each) of goron and...majority of the material-is beta silicon carbide with a small percentage of the alpha phase and a small amount of graphite. In a parallel study being...surface-connected porosity (Figures 12 and 13). This porosity was often an area of small interconnected porosity and not necessarily a discrete void

  17. Synergistic methods for the production of high-strength and low-cost boron carbide

    NASA Astrophysics Data System (ADS)

    Wiley, Charles Schenck

    2011-12-01

    Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of

  18. A Novel Method to Calculate the Carbides Fraction from Dilatometric Measurements During Cooling in Hot-Work Tool Steel

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaoli; Li, Chuanwei; Han, Lizhan; Gu, Jianfeng

    2018-06-01

    Dilatometry is a useful technique to obtain experimental data concerning transformation. In this paper, a dilation conversional model was established to calculate carbides fraction in AISI H13 hot-work tool steel based on the measured length changes. After carbides precipitation, the alloy contents in the matrix changed. In the usual models, the content of carbon atoms after precipitation is considered as the only element that affects the lattice constant and the content of the alloy elements such as Cr, Mo, Mn, V are often ignored. In the model introduced in this paper, the alloying elements (Cr, Mo, Mn, V) changes caused by carbides precipitation are incorporated. The carbides were identified using scanning electron microscope and transmission electron microscope. The relationship between lattice constant of carbides and temperature are measured by high-temperature X-ray diffraction. The results indicate that the carbides observed in all specimens cooled at different rates are V-rich MC and Cr-rich M23C6, and most of them are V-rich MC, only very few are Cr-rich M23C6. The model including the effects of substitutional alloying elements shows a good improvement on carbides fraction predictions. In addition, lower cooling rate advances the carbides precipitation for AISI H13 specimens. The results between experiments and mathematical model agree well.

  19. Silicon Carbide Power Devices and Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  20. Tungsten-yttria carbide coating for conveying copper

    DOEpatents

    Rothman, Albert J.

    1993-01-01

    A method is provided for providing a carbided-tungsten-yttria coating on the interior surface of a copper vapor laser. The surface serves as a wick for the condensation of liquid copper to return the condensate to the interior of the laser for revolatilization.

  1. Frictional Performance Assessment of Cemented Carbide Surfaces Textured by Laser

    NASA Astrophysics Data System (ADS)

    Fang, S.; Llanes, L.; Klein, S.; Gachot, C.; Rosenkranz, A.; Bähre, D.; Mücklich, F.

    2017-10-01

    Cemented carbides are advanced engineering materials often used in industry for manufacturing cutting tools or supporting parts in tribological system. In order to improve service life, special attention has been paid to change surface conditions by means of different methods, since surface modification can be beneficial to reduce the friction between the contact surfaces as well as to avoid unintended damage. Laser surface texturing is one of the newly developed surface modification methods. It has been successfully introduced to fabricate some basic patterns on cemented carbide surfaces. In this work, Direct Laser Interference Patterning Technique (DLIP) is implemented to produce special line-like patterns on a cobalt (Co) and nickel (Ni) based cemented tungsten carbide grade. It is proven that the laser-produced patterns have high geometrical precision and quality stability. Furthermore, tribology testing using a nano-tribometer unit shows that friction is reduced by the line-like patterns, as compared to the polished one, under both lubricated and dry testing regimes, and the reduction is more pronounced in the latter case.

  2. Silicon carbide sewing thread

    NASA Technical Reports Server (NTRS)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  3. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  4. Mechanical Properties and Microstructure of Biomorphic Silicon Carbide Ceramics Fabricated from Wood Precursors

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay; Salem, J. A.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide based, environment friendly, biomorphic ceramics have been fabricated by the pyrolysis and infiltration of natural wood (maple and mahogany) precursors. This technology provides an eco-friendly route to advanced ceramic materials. These biomorphic silicon carbide ceramics have tailorable properties and behave like silicon carbide based materials manufactured by conventional approaches. The elastic moduli and fracture toughness of biomorphic ceramics strongly depend on the properties of starting wood preforms and the degree of molten silicon infiltration. Mechanical properties of silicon carbide ceramics fabricated from maple wood precursors indicate the flexural strengths of 3441+/-58 MPa at room temperature and 230136 MPa at 1350C. Room temperature fracture toughness of the maple based material is 2.6 +/- 0.2 MPa(square root of)m while the mahogany precursor derived ceramics show a fracture toughness of 2.0 +/- 0.2 Mpa(square root of)m. The fracture toughness and the strength increase as the density of final material increases. Fractographic characterization indicates the failure origins to be pores and chipped pockets of silicon.

  5. Electrochemical synthesis of nanoporous tungsten carbide and its application as electrocatalysts for photoelectrochemical cells.

    PubMed

    Kang, Jin Soo; Kim, Jin; Lee, Myeong Jae; Son, Yoon Jun; Jeong, Juwon; Chung, Dong Young; Lim, Ahyoun; Choe, Heeman; Park, Hyun S; Sung, Yung-Eun

    2017-05-04

    Photoelectrochemical (PEC) cells are promising tools for renewable and sustainable solar energy conversion. Currently, their inadequate performance and high cost of the noble metals used in the electrocatalytic counter electrode have postponed the practical use of PEC cells. In this study, we report the electrochemical synthesis of nanoporous tungsten carbide and its application as a reduction catalyst in PEC cells, namely, dye-sensitized solar cells (DSCs) and PEC water splitting cells, for the first time. The method employed in this study involves the anodization of tungsten foil followed by post heat treatment in a CO atmosphere to produce highly crystalline tungsten carbide film with an interconnected nanostructure. This exhibited high catalytic activity for the reduction of cobalt bipyridine species, which represent state-of-the-art redox couples for DSCs. The performance of tungsten carbide even surpassed that of Pt, and a substantial increase (∼25%) in energy conversion efficiency was achieved when Pt was substituted by tungsten carbide film as the counter electrode. In addition, tungsten carbide displayed decent activity as a catalyst for the hydrogen evolution reaction, suggesting the high feasibility for its utilization as a cathode material for PEC water splitting cells, which was also verified in a two-electrode water photoelectrolyzer.

  6. Processing of solid solution, mixed uranium/refractory metal carbides for advanced space nuclear power and propulsion systems

    NASA Astrophysics Data System (ADS)

    Knight, Travis Warren

    Nuclear thermal propulsion (NTP) and space nuclear power are two enabling technologies for the manned exploration of space and the development of research outposts in space and on other planets such as Mars. Advanced carbide nuclear fuels have been proposed for application in space nuclear power and propulsion systems. This study examined the processing technologies and optimal parameters necessary to fabricate samples of single phase, solid solution, mixed uranium/refractory metal carbides. In particular, the pseudo-ternary carbide, UC-ZrC-NbC, system was examined with uranium metal mole fractions of 5% and 10% and corresponding uranium densities of 0.8 to 1.8 gU/cc. Efforts were directed to those methods that could produce simple geometry fuel elements or wafers such as those used to fabricate a Square Lattice Honeycomb (SLHC) fuel element and reactor core. Methods of cold uniaxial pressing, sintering by induction heating, and hot pressing by self-resistance heating were investigated. Solid solution, high density (low porosity) samples greater than 95% TD were processed by cold pressing at 150 MPa and sintering above 2600 K for times longer than 90 min. Some impurity oxide phases were noted in some samples attributed to residual gases in the furnace during processing. Also, some samples noted secondary phases of carbon and UC2 due to some hyperstoichiometric powder mixtures having carbon-to-metal ratios greater than one. In all, 33 mixed carbide samples were processed and analyzed with half bearing uranium as ternary carbides of UC-ZrC-NbC. Scanning electron microscopy, x-ray diffraction, and density measurements were used to characterize samples. Samples were processed from powders of the refractory mono-carbides and UC/UC 2 or from powders of uranium hydride (UH3), graphite, and refractory metal carbides to produce hypostoichiometric mixed carbides. Samples processed from the constituent carbide powders and sintered at temperatures above the melting point of UC

  7. Study on Surface Roughness of Modified Silicon Carbide Mirrors polished by Magnetorheological Finishing

    NASA Astrophysics Data System (ADS)

    Du, Hang; Song, Ci; Li, Shengyi

    2018-01-01

    In order to obtain high precision and high surface quality silicon carbide mirrors, the silicon carbide mirror substrate is subjected to surface modification treatment. In this paper, the problem of Silicon Carbide (SiC) mirror surface roughness deterioration by MRF is studied. The reasons of surface flaws of “Comet tail” are analyzed. Influence principle of MRF polishing depth and the surface roughness of modified SiC mirrors is obtained by experiments. On this basis, the united process of modified SiC mirrors is proposed which is combined MRF with the small grinding head CCOS. The united process makes improvement in the surface accuracy and surface roughness of modified SiC mirrors.

  8. The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

    DTIC Science & Technology

    1990-01-01

    and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

  9. Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

    2009-12-01

    Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

  10. Diamond-Silicon Carbide Composite And Method For Preparation Thereof

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2005-09-06

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  11. A study on the production of titanium carbide nano-powder in the nanostate and its properties

    NASA Astrophysics Data System (ADS)

    Shiryaeva, L. S.; Rudneva, S. V.; Galevsky, G. V.; Garbuzova, A. K.

    2016-09-01

    The plasma synthesis of titanium carbide nano-powder in the conditions close to industrial was studied. Titanium carbide TiC is a wear- and corrosion-resistant, hard, chemically inert material, demanded in various fields for the production of hard alloys, metal- ceramic tools, heat-resistant products, protective metal coatings. New perspectives for application titanium carbide in the nanostate can be found in the field of alloys modification with different composition and destination.

  12. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOEpatents

    Koc, Rasit; Glatzmaier, Gregory C.

    1995-01-01

    A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  13. Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

    PubMed

    Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-08-01

    Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Process for preparing fine grain silicon carbide powder

    DOEpatents

    Wei, G.C.

    Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

  15. Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

    NASA Astrophysics Data System (ADS)

    Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

    2012-01-01

    We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

  16. Semi-solid processing of high-chromium tool steel to obtain microstructures without carbide network

    NASA Astrophysics Data System (ADS)

    Jirková, H.; Aišman, D.; Rubešová, K.; Opatová, K.; Mašek, B.

    2017-02-01

    Treatment of high-alloy tool steels that involves transition to the semi-solid state can transform the sharp-edged primary carbides which usually form during solidification. These carbides severely impair toughness and are virtually impossible to eliminate by conventional treatment routes. Upon classical semi-solid processing which dissolves these carbides, the resulting microstructure consists of polyhedral and super-saturated austenite embedded in lamellar austenite-carbide network. This type of microstructure reflects in the mechanical properties, predominantly in material behaviour under tensile loading. Such a network, however, can be removed by appropriate thermomechanical treatment. In the present experiment, various procedures involving heating to the semi-solid state were tested on X210Cr12 tool steel. The feedstock was heated to the temperature range of 1220 - 1280 °C. The heating was followed by procedures involving either water quenching to the forming temperature, room temperature or temperature from the range from 500 °C to 1000 °C followed by reheating to the forming temperature. It was found that the development of the lamellar network strongly depends on the temperature of heating to semi-solid state. Thermomechanical treatment produced microstructures in which the matrix consisted of a mixture of polyhedral austenite grains and the M-A constituent. In addition, the initial lamellar eutectic network was partially or even completely melted and substituted with a mixture of very fine recrystallized austenite grains and precipitates of chromium carbides. Some fine M7C3 carbides were present in the austenitic-martensitic matrix as well. When appropriate processing parameters were chosen, very good mechanical properties were obtained, among them a hardness of 860 HV10.

  17. Strengthening silicon carbide by quenching

    NASA Technical Reports Server (NTRS)

    Gruver, R. M.; Platts, D. R.; Kirchner, H. P.

    1974-01-01

    Quenching was used to form compressive surface layers in hot-pressed silicon carbide. The presence of the compressive stresses was verified by slotted rod tests. The slotted rod tip deflection was retained at temperatures to at least 1380 C, showing that the stresses are not relieved immediately at elevated temperatures. The flexural strength and impact resistance of specimens quenched from moderate temperatures (2000 C) were increased. Frequently, specimens quenched from higher temperatures were weakened by thermal shock damage.

  18. The antifungal efficiency of carbide lime slurry compared with the commercial lime efficiency

    NASA Astrophysics Data System (ADS)

    Strigac, J.; Mikusinec, J.; Strigacova, J.; Stevulova, N.

    2017-10-01

    The article deals with studying the antifungal efficiency of carbide lime slurry compared to industrially manufactured commercial lime. Antifungal efficiency expressed as mould proofness properties was tested on the fungi using the procedure given in standard CSN 72 4310. A mixture of fungi Aspergillus niger, Chaetomium globosum, Penicillium funiculosum, Paecilomyces variotii and Gliocladium virens was utilized for testing. The scale for evaluating mould proofness properties according to CSN 72 4310 is from 0 to 5 in degree of fungi growth, where 0 means that no fungi growth occurs and the building products and materials possess fungistatic properties. The study confirms the fungistatic propeties of carbide lime slurry as well as industrially manufactured commercial lime. However, carbide lime slurry and industrially manufactured commercial lime possess no fungicidal effect.

  19. Co-precipitated and collocated carbides and Cu-rich precipitates in a Fe-Cu steel characterized by atom-probe tomography.

    PubMed

    Kolli, R Prakash; Seidman, David N

    2014-12-01

    The composition of co-precipitated and collocated NbC carbide precipitates, Fe3C iron carbide (cementite), and Cu-rich precipitates are studied experimentally by atom-probe tomography (APT). The Cu-rich precipitates located at a grain boundary (GB) are also studied. The APT results for the carbides are supplemented with computational thermodynamics predictions of composition at thermodynamic equilibrium. Two types of NbC carbide precipitates are distinguished based on their stoichiometric ratio and size. The Cu-rich precipitates at the periphery of the iron carbide and at the GB are larger than those distributed in the α-Fe (body-centered cubic) matrix, which is attributed to short-circuit diffusion of Cu along the GB. Manganese segregation is not observed at the heterophase interfaces of the Cu-rich precipitates that are located at the periphery of the iron carbide or at the GB, which is unlike those located at the edge of the NbC carbide precipitates or distributed in the α-Fe matrix. This suggests the presence of two populations of NiAl-type (B2 structure) phases at the heterophase interfaces in multicomponent Fe-Cu steels.

  20. Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.

  1. Cesium hafnium chloride: A high light yield, non-hygroscopic cubic crystal scintillator for gamma spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Burger, Arnold, E-mail: aburger@fisk.edu; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235; Rowe, Emmanuel

    We report on the scintillation properties of Cs{sub 2}HfCl{sub 6} (cesium hafnium chloride or CHC) as an example of a little-known class of non-hygroscopic compounds having the generic cubic crystal structure of K{sub 2}PtCl{sub 6}. The crystals are easily growable from the melt using the Bridgman method with minimal precursor treatments or purification. CHC scintillation is centered at 400 nm, with a principal decay time of 4.37 μs and a light yield of up to 54 000 photons/MeV when measured using a silicon CCD photodetector. The light yield is the highest ever reported for an undoped crystal, and CHC also exhibits excellent lightmore » yield nonproportionality. These desirable properties allowed us to build and test CHC gamma-ray spectrometers providing energy resolution of 3.3% at 662 keV.« less

  2. Durable and self-hydrating tungsten carbide-based composite polymer electrolyte membrane fuel cells.

    PubMed

    Zheng, Weiqing; Wang, Liang; Deng, Fei; Giles, Stephen A; Prasad, Ajay K; Advani, Suresh G; Yan, Yushan; Vlachos, Dionisios G

    2017-09-04

    Proton conductivity of the polymer electrolyte membranes in fuel cells dictates their performance and requires sufficient water management. Here, we report a simple, scalable method to produce well-dispersed transition metal carbide nanoparticles. We demonstrate that these, when added as an additive to the proton exchange Nafion membrane, provide significant enhancement in power density and durability over 100 hours, surpassing both the baseline Nafion and platinum-containing recast Nafion membranes. Focused ion beam/scanning electron microscope tomography reveals the key membrane degradation mechanism. Density functional theory exposes that OH• and H• radicals adsorb more strongly from solution and reactions producing OH• are significantly more endergonic on tungsten carbide than on platinum. Consequently, tungsten carbide may be a promising catalyst in self-hydrating crossover gases while retarding desorption of and capturing free radicals formed at the cathode, resulting in enhanced membrane durability.The proton conductivity of polymer electrolyte membranes in fuel cells dictates their performance, but requires sufficient water management. Here, the authors report a simple method to produce well-dispersed transition metal carbide nanoparticles as additives to enhance the performance of Nafion membranes in fuel cells.

  3. Chemical and mechanical analysis of boron-rich boron carbide processed via spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Munhollon, Tyler Lee

    Boron carbide is a material of choice for many industrial and specialty applications due to the exceptional properties it exhibits such as high hardness, chemical inertness, low specific gravity, high neutron cross section and more. The combination of high hardness and low specific gravity makes it especially attractive for high pressure/high strain rate applications. However, boron carbide exhibits anomalous behavior when high pressures are applied. Impact pressures over the Hugoniot elastic limit result in catastrophic failure of the material. This failure has been linked to amorphization in cleavage planes and loss of shear strength. Atomistic modeling has suggested boron-rich boron carbide (B13C2) may be a better performing material than the commonly used B4C due to the elimination of amorphization and an increase in shear strength. Therefore, a clear experimental understanding of the factors that lead to the degradation of mechanical properties as well as the effects of chemistry changes in boron carbide is needed. For this reason, the goal of this thesis was to produce high purity boron carbide with varying stoichiometries for chemical and mechanical property characterization. Utilizing rapid carbothermal reduction and pressure assisted sintering, dense boron carbides with varying stoichiometries were produced. Microstructural characteristics such as impurity inclusions, porosity and grain size were controlled. The chemistry and common static mechanical properties that are of importance to superhard materials including elastic moduli, hardness and fracture toughness of the resulting boron-rich boron carbides were characterized. A series of six boron carbide samples were processed with varying amounts of amorphous boron (up to 45 wt. % amorphous boron). Samples with greater than 40 wt.% boron additions were shown to exhibit abnormal sintering behavior, making it difficult to characterize these samples. Near theoretical densities were achieved in samples with

  4. Effective load transfer by a chromium carbide nanostructure in a multi-walled carbon nanotube/copper matrix composite

    NASA Astrophysics Data System (ADS)

    Cho, Seungchan; Kikuchi, Keiko; Kawasaki, Akira; Kwon, Hansang; Kim, Yangdo

    2012-08-01

    Multi-walled carbon nanotube (MWCNT) reinforced copper (Cu) matrix composites, which exhibit chromium (Cr) carbide nanostructures at the MWCNT/Cu interface, were prepared through a carbide formation using CuCr alloy powder. The fully densified and oriented MWCNTs dispersed throughout the composites were prepared using spark plasma sintering (SPS) followed by hot extrusion. The tensile strengths of the MWCNT/CuCr composites increased with increasing MWCNTs content, while the tensile strength of MWCNT/Cu composite decreased from that of monolithic Cu. The enhanced tensile strength of the MWCNT/CuCr composites is a result of possible load-transfer mechanisms of the interfacial Cr carbide nanostructures. The multi-wall failure of MWCNTs observed in the fracture surface of the MWCNT/CuCr composites indicates an improvement in the load-bearing capacity of the MWCNTs. This result shows that the Cr carbide nanostructures effectively transferred the tensile load to the MWCNTs during fracture through carbide nanostructure formation in the MWCNT/Cu composite.

  5. The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun

    1994-01-01

    Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

  6. High temperature radiance spectroscopy measurements of solid and liquid uranium and plutonium carbides

    NASA Astrophysics Data System (ADS)

    Manara, D.; De Bruycker, F.; Boboridis, K.; Tougait, O.; Eloirdi, R.; Malki, M.

    2012-07-01

    In this work, an experimental study of the radiance of liquid and solid uranium and plutonium carbides at wavelengths 550 nm ⩽ λ ⩽ 920 nm is reported. A fast multi-channel spectro-pyrometer has been employed for the radiance measurements of samples heated up to and beyond their melting point by laser irradiation. The melting temperature of uranium monocarbide, soundly established at 2780 K, has been taken as a radiance reference. Based on it, a wavelength-dependence has been obtained for the high-temperature spectral emissivity of some uranium carbides (1 ⩽ C/U ⩽ 2). Similarly, the peritectic temperature of plutonium monocarbide (1900 K) has been used as a reference for plutonium monocarbide and sesquicarbide. The present spectral emissivities of solid uranium and plutonium carbides are close to 0.5 at 650 nm, in agreement with previous literature values. However, their high temperature behaviour, values in the liquid, and carbon-content and wavelength dependencies in the visible-near infrared range have been determined here for the first time. Liquid uranium carbide seems to interact with electromagnetic radiation in a more metallic way than does the solid, whereas a similar effect has not been observed for plutonium carbides. The current emissivity values have also been used to convert the measured radiance spectra into real temperature, and thus perform a thermal analysis of the laser heated samples. Some high-temperature phase boundaries in the systems U-C and Pu-C are shortly discussed on the basis of the current results.

  7. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOEpatents

    Koc, R.; Glatzmaier, G.C.

    1995-05-23

    A process is disclosed for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  8. R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

    ScienceCinema

    Dries, Chris; Hostetler, John; Atcitty, Stan

    2018-06-12

    Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.

  9. Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors

    NASA Technical Reports Server (NTRS)

    Goodman, William

    2012-01-01

    Honeycomb silicon carbide composite mirrors are made from a carbon fiber preform that is molded into a honeycomb shape using a rigid mold. The carbon fiber honeycomb is densified by using polymer infiltration pyrolysis, or through a reaction with liquid silicon. A chemical vapor deposit, or chemical vapor composite (CVC), process is used to deposit a polishable silicon or silicon carbide cladding on the honeycomb structure. Alternatively, the cladding may be replaced by a freestanding, replicated CVC SiC facesheet that is bonded to the honeycomb. The resulting carbon fiber-reinforced silicon carbide honeycomb structure is a ceramic matrix composite material with high stiffness and mechanical strength, high thermal conductivity, and low CTE (coefficient of thermal expansion). This innovation enables rapid, inexpensive manufacturing. The web thickness of the new material is less than 1 millimeter, and core geometries tailored. These parameters are based on precursor carbon-carbon honeycomb material made and patented by Ultracor. It is estimated at the time of this reporting that the HoneySiC(Trademark) will have a net production cost on the order of $38,000 per square meter. This includes an Ultracor raw material cost of about $97,000 per square meter, and a Trex silicon carbide deposition cost of $27,000 per square meter. Even at double this price, HoneySiC would beat NASA's goal of $100,000 per square meter. Cost savings are estimated to be 40 to 100 times that of current mirror technologies. The organic, rich prepreg material has a density of 56 kilograms per cubic meter. A charred carbon-carbon panel (volatile organics burnt off) has a density of 270 kilograms per cubic meter. Therefore, it is estimated that a HoneySiC panel would have a density of no more than 900 kilograms per cubic meter, which is about half that of beryllium and about onethird the density of bulk silicon carbide. It is also estimated that larger mirrors could be produced in a matter of weeks

  10. Nano-Disperse Borides and Carbides: Plasma Technology Production, Specific Properties, Economic Evaluation

    NASA Astrophysics Data System (ADS)

    Galevskii, G. V.; Rudneva, V. V.; Galevskii, S. G.; Tomas, K. I.; Zubkov, M. S.

    2016-04-01

    The experience of production and study on properties of nano-disperse chromium and titanium borides and carbides, and silicon carbide has been generalized. The structure and special service aspects of utilized plasma-metallurgical complex equipped with a three-jet direct-flow reactor with a capacity of 150 kW have been outlined. Processing, heat engineering and service life characteristics of the reactor are specified. The synthesis parameters of borides and carbides, as well as their basic characteristics in nano-disperse condition and their production flow diagram are outlined. Engineering and economic performance of synthesizing borides in laboratory and industrial conditions is assessed, and the respective segment of the international market as well. The work is performed at State Siberian Industrial University as a project part of the State Order of Ministry of Science and Education of the Russian Federation No. 11.1531/2014/K.

  11. Unintentional carbide formation evidenced during high-vacuum magnetron sputtering of transition metal nitride thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-11-01

    Carbide signatures are ubiquitous in the surface analyses of industrially sputter-deposited transition metal nitride thin films grown with carbon-less source materials in typical high-vacuum systems. We use high-energy-resolution photoelectron spectroscopy to reveal details of carbon temporal chemical state evolution, from carbide formed during film growth to adventitious carbon adsorbed upon contact with air. Using in-situ grown Al capping layers that protect the as-deposited transition metal nitride surfaces from oxidation, it is shown that the carbide forms during film growth rather than as a result of post deposition atmosphere exposure. The XPS signature of carbides is masked by the presence of adventitious carbon contamination, appearing as soon as samples are exposed to atmosphere, and eventually disappears after one week-long storage in lab atmosphere. The concentration of carbon assigned to carbide species varies from 0.28 at% for ZrN sample, to 0.25 and 0.11 at% for TiN and HfN, respectively. These findings are relevant for numerous applications, as unintentionally formed impurity phases may dramatically alter catalytic activity, charge transport and mechanical properties by offsetting the onset of thermally-induced phase transitions. Therefore, the chemical state of C impurities in PVD-grown films should be carefully investigated.

  12. Experimental evaluation of chromium-carbide-based solid lubricant coatings for use to 760 C

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher

    1987-01-01

    A research program is described which further developed and investigated chromium carbide based self-lubricating coatings for use to 760 C. A bonded chromium carbide was used as the base stock because of the known excellent wear resistance and the chemical stability of chromium carbide. Additives were silver and barium fluoride/calcium fluoride eutectic. The three coating components were blended in powder form, applied to stainless steel substrates by plasma spraying and then diamond ground to the desired coating thickness. A variety of coating compositions was tested to determine the coating composition which gave optimum tribological results. Coatings were tested in air, helium, and hydrogen at temperatures from 25 to 760 C. Several counterface materials were evaluated with the objective of discovering a satisfactory metal/coating sliding combination for potential applications, such as piston ring/cylinder liner couples for Stirling engines. In general, silver and fluoride additions to chromium carbide reduced the friction coefficient and increased the wear resistance relative to the unmodified coating. The lubricant additives acted synergistically in reducing friction and wear.

  13. Electrochemical synthesis of binary molybdenum-tungsten carbides (Mo,W)2C from tungstate-molybdate-carbonate melts

    NASA Astrophysics Data System (ADS)

    Kushkhov, Kh. B.; Kardanov, A. L.; Adamokova, M. N.

    2013-02-01

    Nanopowders of binary tungsten-molybdenum carbide are fabricated by high-temperature electrochemical synthesis. The optimum concentration relations between electrolyte components, the current density, and the quantity of electricity are determined to synthesize binary tungsten-molybdenum carbides.

  14. Role of precursor crystal structure on electrochemical performance of carbide-derived carbon electrodes

    NASA Astrophysics Data System (ADS)

    Palazzo, Benjamin; Norris, Zach; Taylor, Greg; Yu, Lei; Lofland, Samuel; Hettinger, Jeffrey

    2015-03-01

    Binary carbides with hexagonal and cubic crystal structures have been synthesized by reactive magnetron sputtering of vanadium and other transition metals in acetylene or methane gas mixed with argon. The binary carbides are converted to carbide-derived carbon (CDC) films using chlorine gas in a post-deposition process in an external vacuum reaction furnace. Residual chlorine has been removed using an annealing step in a hydrogen atmosphere. The CDC materials have been characterized by x-ray diffraction, x-ray fluorescence, and scanning electron microscopy. The performance of the CDC materials in electrochemical device applications has been measured with the hexagonal phase precursor demonstrating a significantly higher specific capacitance in comparison to that of the cubic phase. We report these results and pore-size distributions of these and similar materials.

  15. Thermal radiative and thermodynamic properties of solid and liquid uranium and plutonium carbides in the visible-near-infrared range

    NASA Astrophysics Data System (ADS)

    Fisenko, Anatoliy I.; Lemberg, Vladimir F.

    2016-09-01

    The knowledge of thermal radiative and thermodynamic properties of uranium and plutonium carbides under extreme conditions is essential for designing a new metallic fuel materials for next generation of a nuclear reactor. The present work is devoted to the study of the thermal radiative and thermodynamic properties of liquid and solid uranium and plutonium carbides at their melting/freezing temperatures. The Stefan-Boltzmann law, total energy density, number density of photons, Helmholtz free energy density, internal energy density, enthalpy density, entropy density, heat capacity at constant volume, pressure, and normal total emissivity are calculated using experimental data for the frequency dependence of the normal spectral emissivity of liquid and solid uranium and plutonium carbides in the visible-near infrared range. It is shown that the thermal radiative and thermodynamic functions of uranium carbide have a slight difference during liquid-to-solid transition. Unlike UC, such a difference between these functions have not been established for plutonium carbide. The calculated values for the normal total emissivity of uranium and plutonium carbides at their melting temperatures is in good agreement with experimental data. The obtained results allow to calculate the thermal radiative and thermodynamic properties of liquid and solid uranium and plutonium carbides for any size of samples. Based on the model of Hagen-Rubens and the Wiedemann-Franz law, a new method to determine the thermal conductivity of metals and carbides at the melting points is proposed.

  16. Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

    NASA Technical Reports Server (NTRS)

    Singh, M.; Dickerson, R. M.

    1996-01-01

    Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

  17. Neutron Detection using Amorphous Boron-Carbide Hetero-Junction Diodes

    DTIC Science & Technology

    2012-03-22

    Parameter Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 B.1.1 UMKC Built-in Voltage...Electronic properties of boron carbide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2. Diode Material/Geometric Parameters ...42 6. Material parameters for Davinci model . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 x List of

  18. Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

    NASA Astrophysics Data System (ADS)

    Peterson, George Glenn

    Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

  19. Process for coating an object with silicon carbide

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1989-01-01

    A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

  20. High-pressure phase transition makes B 4.3 C boron carbide a wide-gap semiconductor

    DOE PAGES

    Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut; ...

    2016-01-11

    Single-crystal B4.3C boron carbide is investigated concerning the pressure-dependence of optical properties and of Raman-active phonons up to ~70 GPa. The high concentration of structural defects determining the electronic properties of boron carbide at ambient conditions initially decrease and finally vanish with pressure increasing. We obtain this immediately from transparency photos, allowing to estimate the pressure-dependent variation of the absorption edge rapidly increasing around 55 GPa. Glass-like transparency at pressures exceeding 60 GPa indicate that the width of the band exceeds ~3.1 eV thus making boron carbide a wide-gap semiconductor. Furthermore, the spectra of Raman–active phonons indicate a pressure-dependent phasemore » transition in single-crystal natB4.3C boron carbide near 35 GPa., particularly related to structural changes in connection with the C-B-C chains, while the basic icosahedral structure remains largely unaffected.« less

  1. Composition optimization of self-lubricating chromium-carbide-based composite coatings for use to 760 C

    NASA Technical Reports Server (NTRS)

    Dellacorte, Chris; Sliney, Harold E.

    1987-01-01

    This paper describes new compositions of self-lubricating coatings that contain chromium carbide. A bonded chromium carbide was used as the base stock because of the known excellent wear resistance and the chemical stability of chromium carbide. Additives were silver and barium fluoride/calcium fluoride eutectic. The coating constituents were treated as a ternary system consisting of: (1) the bonded carbide base material, (2) silver, and (3) the eutectic. A study to determine the optimum amounts of each constituent was performed. The various compositions were prepared by powder blending. The blended powders were then plasma sprayed onto superalloy substrates and diamond ground to the desired coating thickness. Friction and wear studies were performed at temperatures from 25 to 760 C in helium and hydrogen. A variety of counterface materials were evaluated with the objective of discovering a satisfactory metal/coating sliding combination for potential applications such as piston ring/cylinder liner couples for Stirling engines.

  2. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, T. J.; Winterbottom, W. L.

    1986-01-01

    Work performed to develop silicon carbide materials of high strength and to form components of complex shape and high reliability is described. A beta-SiC powder and binder system was adapted to the injection molding process and procedures and process parameters developed capable of providing a sintered silicon carbide material with improved properties. The initial effort has been to characterize the baseline precursor materials (beta silicon carbide powder and boron and carbon sintering aids), develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures have been carried out in order to distinguish process routes for improving material properties. A total of 276 MOR bars of the baseline material have been molded, and 122 bars have been fully processed to a sinter density of approximately 95 percent. The material has a mean MOR room temperature strength of 43.31 ksi (299 MPa), a Weibull characteristic strength of 45.8 ksi (315 MPa), and a Weibull modulus of 8.0. Mean values of the MOR strengths at 1000, 1200, and 14000 C are 41.4, 43.2, and 47.2 ksi, respectively. Strength controlling flaws in this material were found to consist of regions of high porosity and were attributed to agglomerates originating in the initial mixing procedures. The mean stress rupture lift at 1400 C of five samples tested at 172 MPa (25 ksi) stress was 62 hours and at 207 MPa (30 ksi) stress was 14 hours. New fluid mixing techniques have been developed which significantly reduce flaw size and improve the strength of the material. Initial MOR tests indicate the strength of the fluid-mixed material exceeds the baseline property by more than 33 percent.

  3. Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

    NASA Technical Reports Server (NTRS)

    Scheick, Leif; Selva, Luis; Selva, Luis

    2004-01-01

    A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

  4. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, Thomas J.; Mangels, J. A.

    1986-01-01

    The development of silicon carbide materials of high strength was initiated and components of complex shape and high reliability were formed. The approach was to adapt a beta-SiC powder and binder system to the injection molding process and to develop procedures and process parameters capable of providing a sintered silicon carbide material with improved properties. The initial effort was to characterize the baseline precursor materials, develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures were performed in order to distinguish process routes for improving material properties. A total of 276 modulus-of-rupture (MOR) bars of the baseline material was molded, and 122 bars were fully processed to a sinter density of approximately 95 percent. Fluid mixing techniques were developed which significantly reduced flaw size and improved the strength of the material. Initial MOR tests indicated that strength of the fluid-mixed material exceeds the baseline property by more than 33 percent. the baseline property by more than 33 percent.

  5. Development of Matrix Microstructures in UHTC Composites

    NASA Technical Reports Server (NTRS)

    Johnson, Sylvia; Stackpoole, Margaret; Gusman, Michael

    2012-01-01

    One of the major issues hindering the use of ultra high temperature ceramics for aerospace applications is low fracture toughness. There is considerable interest in developing fiber-reinforced composites to improve fracture toughness. Considerable knowledge has been gained in controlling and improving the microstructure of monolithic UHTCs, and this paper addresses the question of transferring that knowledge to composites. Some model composites have been made and the microstructures of the matrix developed has been explored and compared to the microstructure of monolithic materials in the hafnium diboride/silicon carbide family. Both 2D and 3D weaves have been impregnated and processed.

  6. Diamond-silicon carbide composite and method

    DOEpatents

    Zhao, Yusheng [Los Alamos, NM

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  7. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    DOEpatents

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  8. Infrared absorption spectra of metal carbides, nitrides and sulfides

    NASA Technical Reports Server (NTRS)

    Kammori, O.; Sato, K.; Kurosawa, F.

    1981-01-01

    The infrared absorption spectra of 12 kinds of metal carbides, 11 kinds of nitrides, and 7 kinds of sulfides, a total of 30 materials, were measured and the application of the infrared spectra of these materials to analytical chemistry was discussed. The measurements were done in the frequency (wave length) range of (1400 to 400/cm (7 to 25 mu). The carbides Al4C3, B4C, the nitrides AlN, BN, Si3N4, WB, and the sulfides Al2S3, FeS2, MnS, NiS and PbS were noted to have specific absorptions in the measured region. The sensitivity of Boron nitride was especially good and could be detected at 2 to 3 micrograms in 300 mg of potassium bromide.

  9. Thermodynamic Analysis and Growth of Zirconium Carbide by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wei, Sun; Hua, Hao Zheng; Xiang, Xiong

    Equilibrium calculations were used to optimize conditions for the chemical vapor deposition of zirconium carbide from zirconium halide + CxHy+H2+Ar system. The results show the CVD-ZrC phase diagram is divided into ZrC+C, ZrC and ZrC+Zr zones by C, Zr generating lines. For the same mole of ZrCl4 reactant, it needs higher concentration of CH4 to generate single ZrC phase than that of C3H6. Using these calculations as a guide, single-phase cubic zirconium carbide coatings were deposited onto graphite substrate.

  10. Carbide fuel pin and capsule design for irradiations at thermionic temperatures

    NASA Technical Reports Server (NTRS)

    Siegel, B. L.; Slaby, J. G.; Mattson, W. F.; Dilanni, D. C.

    1973-01-01

    The design of a capsule assembly to evaluate tungsten-emitter - carbide-fuel combinations for thermionic fuel elements is presented. An inpile fuel pin evaluation program concerned with clad temperture, neutron spectrum, carbide fuel composition, fuel geometry,fuel density, and clad thickness is discussed. The capsule design was a compromise involving considerations between heat transfer, instrumentation, materials compatibility, and test location. Heat-transfer calculations were instrumental in determining the method of support of the fuel pin to minimize axial temperature variations. The capsule design was easily fabricable and utilized existing state-of-the-art experience from previous programs.

  11. Process of making titanium carbide (TiC) nano-fibrous felts

    DOEpatents

    Fong, Hao; Zhang, Lifeng; Zhao, Yong; Zhu, Zhengtao

    2015-01-13

    A method of synthesizing mechanically resilient titanium carbide (TiC) nanofibrous felts comprising continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix, comprising: (a) electrospinning a spin dope for making precursor nanofibers with diameters less than 0.5 J.Lm; (b) overlaying the nanofibers to produce a nanofibrous mat (felt); and then (c) heating the nano-felts first at a low temperature, and then at a high temperature for making electrospun continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix; and (d) chlorinating the above electrospun nano-felts at an elevated temperature to remove titanium for producing carbide derived carbon (CDC) nano-fibrous felt with high specific surface areas.

  12. Isolation of tungsten and tantalum isotopes without supports from. cap alpha. -particle-irradiated hafnium targets

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gasita, S.M.; Iota, B.Z.; Malachkov, A.G.

    1985-11-01

    An extraction procedure has been developed for successive isolation of tungsten (/sup 178/W and /sup 181/W) and tantalum (/sup 179/Ta and /sup 182/Ta) isotopes without supports from ..cap alpha..particle-irradiated hafnium targets. The target, irradiated on a cyclotron, is dissolved in hydrofluoric acid. Tantalum isotopes are extracted with tributyl phosphate (TBP) from 1-5 M HF and are then reextracted with a 1:1 ammonia solution, and hydrofluoric acid is removed by heating. Tungsten isotopes are extracted with a chloroform solution or N-benzoyl-N-phenylhydroxylamine (BPHA) from 11-12 M H/sub 2/SO/sub 4/ or ..cap alpha..-benzoin oxime from 4.5-5.5 M H/sub 2/SO/sub 4/ and are thenmore » reextracted with a l:l ammonia solution. The yield of tungsten isotopes is not less than 95%, and the content of radioactive impurities of other isotopes is not more than 0.1%.« less

  13. Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay; Dickerson, Robert M.

    1995-01-01

    Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

  14. A review of nuclear thermal propulsion carbide fuel corrosion and key issues

    NASA Technical Reports Server (NTRS)

    Pelaccio, Dennis G.; El-Genk, Mohamed S.

    1994-01-01

    Corrosion (mass loss) of carbide nuclear fuels due to their exposure to hot hydrogen in nuclear thermal propulsion engine systems greatly impacts the performance, thrust-to-weight and life of such systems. This report provides an overview of key issues and processes associated with the corrosion of carbide materials. Additionally, past pertinent development reactor test observations, as well as related experimental work and analysis modeling efforts are reviewed. At the conclusion, recommendations are presented, which provide the foundation for future corrosion modeling and verification efforts.

  15. Fabrication of Carbon Nanotube - Chromium Carbide Composite Through Laser Sintering

    NASA Astrophysics Data System (ADS)

    Liu, Ze; Gao, Yibo; Liang, Fei; Wu, Benxin; Gou, Jihua; Detrois, Martin; Tin, Sammy; Yin, Ming; Nash, Philip; Tang, Xiaoduan; Wang, Xinwei

    2016-03-01

    Ceramics often have high hardness and strength, and good wear and corrosion resistance, and hence have many important applications, which, however, are often limited by their poor fracture toughness. Carbon nanotubes (CNTs) may enhance ceramic fracture toughness, but hot pressing (which is one typical approach of fabricating CNT-ceramic composites) is difficult to apply for applications that require localized heat input, such as fabricating composites as surface coatings. Laser beam may realize localized material sintering with little thermal effect on the surrounding regions. However, for the typical ceramics for hard coating applications (as listed in Ref.[1]), previous work on laser sintering of CNT-ceramic composites with mechanical property characterizations has been very limited. In this paper, research work has been reported on the fabrication and characterization of CNT-ceramic composites through laser sintering of mixtures of CNTs and chromium carbide powders. Under the studied conditions, it has been found that laser-sintered composites have a much higher hardness than that for plasma-sprayed composites reported in the literature. It has also been found that the composites obtained by laser sintering of CNTs and chromium carbide powder mixtures have a fracture toughness that is ~23 % higher than the material obtained by laser sintering of chromium carbide powders without CNTs.

  16. Crystallography of in-situ transformations of the M 7C3 carbide in the cast Fe-Cr-Ni alloy

    NASA Astrophysics Data System (ADS)

    Kraposhin, V. S.; Kondrat'ev, S. Yu.; Talis, A. L.; Anastasiadi, G. P.

    2017-03-01

    In the process of holding of the cast heat-resistant Fe-Cr-Ni (0.45C-25Cr-35Ni) alloy at 1150°C, the eutectic chromium carbide present in its structure undergoes a gradual transition M 7C3 → M 23C6. The gradual formation of domains of the M 23C6 carbide inside the particles of the M 7C3 carbide makes it possible to assume that the observed phase transition is the well-known carbide transformation of the in situ type. The mechanism of the in situ transformation of the crystal structure of the carbide from M 7C3 into M 23C6 with a change in the number of nearest metal neighbors of carbon atoms is explained within the previously developed combinatory model of polymorphic transitions in the metals.

  17. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  18. Influence of coolant on ductile mode processing of binderless nanocrystalline tungsten carbide through ultraprecision diamond turning

    NASA Astrophysics Data System (ADS)

    Doetz, Marius; Dambon, Olaf; Klocke, Fritz; Fähnle, Oliver

    2015-08-01

    Molds made of tungsten carbide are typically used for the replicative mass production of glass lenses by precision glass molding. Consequently an ultra-precision grinding process with a subsequent fresh-feed polishing operation is conventionally applied. These processes are time consuming and have a relatively low reproducibility. An alternative manufacturing technology, with a high predictability and efficiency, which additionally allows a higher geometrical flexibility, is the single point diamond turning technique (SPDT). However, the extreme hardness and the chemical properties of tungsten carbide lead to significant tool wear and therefore the impossibility of machining the work pieces in an economical way. One approach to enlarge the tool life is to affect the contact zone between tool and work piece by the use of special cutting fluids. This publication emphasizes on the most recent investigations and results in direct machining of nano-grained tungsten carbide with mono crystal diamonds under the influence of various kinds of cutting fluids. Therefore basic ruling experiments on binderless nano grained tungsten carbide were performed, where the tool performed a linear movement with a steadily increasing depth of cut. As the ductile cutting mechanism is a prerequisite for the optical manufacturing of tungsten carbide these experiments serve the purpose for establish the influence of different cutting fluid characteristics on the cutting performance of mono crystal diamonds. Eventually it is shown that by adjusting the coolant fluid it is possible to significantly shift the transition point from ductile to brittle removal to larger depths of cut eventually enabling a SPDT of binderless tungsten carbide molds.

  19. Producing Silicon Carbide for Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Rohatgi, N. K.

    1986-01-01

    Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

  20. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  1. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng

    Due to the favorable operating power, endurance, speed, and density., transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physiocochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resettingmore » the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.« less

  2. Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

    NASA Astrophysics Data System (ADS)

    Diaz-Cano, Andres

    Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

  3. Silicon Carbide Technologies for Lightweighted Aerospace Mirrors

    DTIC Science & Technology

    2008-09-01

    Silicon Carbide Technologies for Lightweighted Aerospace Mirrors Lawrence E. Matson (1) Ming Y. Chen (1) Brett deBlonk (2) Iwona A...glass and beryllium to produce lightweighted aerospace mirror systems has reached its limits due to the long lead times, high processing costs...for making mirror structural substrates, figuring and finishing technologies being investigated to reduce cost time and cost, and non-destructive

  4. Diffusion Bonding of Silicon Carbide Ceramics using Titanium Interlayers

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, James D.

    2006-01-01

    Robust joining approaches for silicon carbide ceramics are critically needed to fabricate leak free joints with high temperature mechanical capability. In this study, titanium foils and physical vapor deposited (PVD) titanium coatings were used to form diffusion bonds between SiC ceramics using hot pressing. Silicon carbide substrate materials used for bonding include sintered SiC and two types of CVD SiC. Microscopy results show the formation of well adhered diffusion bonds. The bond strengths as determined from pull tests are on the order of several ksi, which is much higher than required for a proposed application. Microprobe results show the distribution of silicon, carbon, titanium, and other minor elements across the diffusion bond. Compositions of several phases formed in the joint region were identified. Potential issues of material compatibility and optimal bond formation will also be discussed.

  5. Local Atomic Arrangements and Band Structure of Boron Carbide.

    PubMed

    Rasim, Karsten; Ramlau, Reiner; Leithe-Jasper, Andreas; Mori, Takao; Burkhardt, Ulrich; Borrmann, Horst; Schnelle, Walter; Carbogno, Christian; Scheffler, Matthias; Grin, Yuri

    2018-05-22

    Boron carbide, the simple chemical combination of boron and carbon, is one of the best-known binary ceramic materials. Despite that, a coherent description of its crystal structure and physical properties resembles one of the most challenging problems in materials science. By combining ab initio computational studies, precise crystal structure determination from diffraction experiments, and state-of-the-art high-resolution transmission electron microscopy imaging, this concerted investigation reveals hitherto unknown local structure modifications together with the known structural alterations. The mixture of different local atomic arrangements within the real crystal structure reduces the electron deficiency of the pristine structure CBC+B 12 , answering the question about electron precise character of boron carbide and introducing new electronic states within the band gap, which allow a better understanding of physical properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Durable and self-hydrating tungsten carbide-based composite polymer electrolyte membrane fuel cells

    DOE PAGES

    Zheng, Weiqing; Wang, Liang; Deng, Fei; ...

    2017-09-04

    Proton conductivity of the polymer electrolyte membranes in fuel cells dictates their performance and requires sufficient water management. Here, we report a simple, scalable method to produce well-dispersed transition metal carbide nanoparticles. We demonstrate that these, when added as an additive to the proton exchange Nafion membrane, provide significant enhancement in power density and durability over 100 hours, surpassing both the baseline Nafion and platinum-containing recast Nafion membranes. Using focused ion beam/scanning electron microscope tomography reveals the key membrane degradation mechanism. Density functional theory exposes that OH• and H• radicals adsorb more strongly from solution and reactions producing OH• aremore » significantly more endergonic on tungsten carbide than on platinum. Consequently, tungsten carbide may be a promising catalyst in self-hydrating crossover gases while retarding desorption of and capturing free radicals formed at the cathode, resulting in enhanced membrane durability.« less

  7. Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

    NASA Astrophysics Data System (ADS)

    Coscia, U.; Ambrosone, G.; Basa, D. K.

    2008-03-01

    The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

  8. Pressure-induced structural phase transition in transition metal carbides TMC (TM = Ru, Rh, Pd, Os, Ir, Pt): a DFT study

    NASA Astrophysics Data System (ADS)

    Manikandan, M.; Rajeswarapalanichamy, R.; Iyakutti, K.

    2018-03-01

    First-principles calculations based on density functional theory was performed to analyse the structural stability of transition metal carbides TMC (TM = Ru, Rh, Pd, Os, Ir, Pt). It is observed that zinc-blende phase is the most stable one for these carbides. Pressure-induced structural phase transition from zinc blende to NiAs phase is predicted at the pressures of 248.5 GPa, 127 GPa and 142 GPa for OsC, IrC and PtC, respectively. The electronic structure reveals that RuC exhibits a semiconducting behaviour with an energy gap of 0.7056 eV. The high bulk modulus values of these carbides indicate that these metal carbides are super hard materials. The high B/G value predicts that the carbides are ductile in their most stable phase.

  9. Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

    2017-01-01

    This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

  10. Composition optimization of self-lubricating chromium carbide-based composite coatings for use to 760 deg C

    NASA Technical Reports Server (NTRS)

    Dellacorte, C.; Sliney, H. E.

    1986-01-01

    This paper describes new compositions of self-lubricating coatings that contain chromium carbide. A bonded chromium carbide was used as the base stock because of the known excellent wear resistance and the chemical stability of chromium carbide. Additives were silver and barium fluoride/calcium fluoride eutectic. The coating constituents were treated as a ternary system consisting of: (1) the bonded carbide base material, (2) silver, and (3) the eutectic. A study to determine the optimum amounts of each constituent was performed. The various compositions were prepared by powder blending. The blended powders were then plasma sprayed onto superalloy substrates and diamond ground to the desired coating thickness. Friction and wear studies were performed at temperatures from 25 to 760 C in helium and hydrogen. A variety of counterface materials were evaluated with the objective of discovering a satisfactory metal/coating sliding combination for potential applications such as piston ring/cylinder liner couples for Stirling engines.

  11. A COMPARISON OF EXPERIMENTS AND THREE-DIMENSIONAL ANALYSIS TECHNIQUES. PART I. UNPOISONED UNIFORM SLAB CORE WITH A PARTIALLY INSERTED HAFNIUM ROD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Renzi, N.E.; Roseberry, R.J.

    >The experimental measurements and nuclear analysis of a uniformly loaded, unpoisoned slab core with a partially insented hafnium rod are described. Comparisons of experimental data with calculated results of the UFO code and flux synthesis techniques are given. It was concluded that one of the flux synthesis techniques and the UFO code are able to predict flux distributions to within approximately 5% of experiment for most cases. An error of approximately 10% was found in the synthesis technique for a channel near the partially inserted rod. The various calculations were able to predict neutron pulsed shutdowns to only approximately 30%.more » (auth)« less

  12. High-energy X-ray detection by hafnium-doped organic-inorganic hybrid scintillators prepared by sol-gel method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, Yan; Koshimizu, Masanori, E-mail: koshi@qpc.che.tohoku.ac.jp; Yahaba, Natsuna

    2014-04-28

    With the aim of enhancing the efficiency with which plastic scintillators detect high-energy X-rays, hafnium-doped organic-inorganic hybrid scintillators were fabricated via a sol-gel method. Transmission electron microscopy of sampled material reveals the presence of Hf{sub x}Si{sub 1−x}O{sub 2} nanoparticles, dispersed in a polymer matrix that constitutes the active material of the X-ray detector. With Hf{sub x}Si{sub 1−x}O{sub 2} nanoparticles incorporated in the polymer matrix, the absorption edge and the luminescence wavelength is shifted, which we attribute to Mie scattering. The detection efficiency for 67.4-keV X-rays in a 0.6-mm-thick piece of this material is two times better than the same thicknessmore » of a commercial plastic scintillator-NE142.« less

  13. Observations on infiltration of silicon carbide compacts with an aluminium alloy

    NASA Technical Reports Server (NTRS)

    Asthana, R.; Rohatgi, P. K.

    1992-01-01

    The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

  14. Base-metal saturation of refractory carbide coatings produced by enhanced ceramic jets in electrothermally exploded powder spray

    NASA Astrophysics Data System (ADS)

    Tamura, Hideki; Itaya, Masanobu

    2000-09-01

    Tungsten carbide and tantalum carbide were sprayed onto substrates of mild steel by the electrothermally exploded powder spray (ELTEPS) process. High-speed x-ray radiography revealed that tungsten-carbide jets of molten particles guided inside a nozzle exhibited denser flow than unguided jets at the substrate. The velocity of the jet was approximately 800 m/s at the early stage of jetting. The ceramic coatings obtained from the guided spray consisted of carbides of a few to tens of micrometers in size, which were saturated by the base metal up to the top of the coating. The coatings exhibited diffusion of the sprayed ceramics and base metal at the interface of the deposit and substrate. The enhancement of the jet flow formed a microstructure of the ceramic coating, which was saturated by the base metal even without post heat treatment.

  15. Carbide Coatings for Nickel Alloys, Graphite and Carbon/Carbon Composites to be used in Fluoride Salt Valves

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nagle, Denis; Zhang, Dajie

    2015-10-22

    The focus of this research was concerned with developing materials technology that supports the evolution of Generation IV Advanced High Temperature Reactor (AHTR) concepts. Specifically, we investigate refractory carbide coatings for 1) nickel alloys, and 2) commercial carbon-carbon composites (CCCs). Numerous compelling reasons have driven us to focus on carbon and carbide materials. First, unlike metals, the strength and modulus of CCCs increase with rising temperature. Secondly, graphite and carbon composites have been proven effective for resisting highly corrosive fluoride melts such as molten cryolite [Na₃AlF₆] at ~1000°C in aluminum reduction cells. Thirdly, graphite and carbide materials exhibit extraordinary radiationmore » damage tolerance and stability up to 2000°C. Finally, carbides are thermodynamically more stable in liquid fluoride salt than the corresponding metals (i.e. Cr and Zr) found in nickel based alloys.« less

  16. Computational-Experimental Processing of Boride/Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C

    DTIC Science & Technology

    2015-09-16

    AFRL-AFOSR-VA-TR-2015-0314 Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C...Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C 5a.  CONTRACT NUMBER 5b.  GRANT...with a packed bed of B4C to form boride - carbide precipitates. Although the ultimate goal of the research endeavor is to enhance significantly the

  17. Equations of state and melting curve of boron carbide in the high-pressure range of shock compression

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Molodets, A. M., E-mail: molodets@icp.ac.ru; Golyshev, A. A.; Shakhrai, D. V.

    We have constructed the equations of state for crystalline boron carbide B{sub 11}C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.

  18. High Chromium Cast Irons: Destabilized-Subcritical Secondary Carbide Precipitation and Its Effect on Hardness and Wear Properties

    NASA Astrophysics Data System (ADS)

    Guitar, María Agustina; Suárez, Sebastián; Prat, Orlando; Duarte Guigou, Martín; Gari, Valentina; Pereira, Gastón; Mücklich, Frank

    2018-05-01

    This work evaluates the effect of a destabilization treatment combined with a subcritical diffusion (SCD) and a subsequent quenching (Q) steps on precipitation of secondary carbides and their influence on the wear properties of HCCI (16%Cr). The destabilization of the austenite at high temperature leads to a final microstructure composed of eutectic and secondary carbides, with an M7C3 nature, embedded in a martensitic matrix. An improved wear resistance was observed in the SCD + Q samples in comparison with the Q one, which was attributed to the size of secondary carbides.

  19. RESEARCH ON PHYSICAL AND CHEMICAL PRINCIPLES AFFECTING HIGH TEMPERATURE MATERIALS FOR ROCKET NOZZLES. Quarterly Progress Report, April 1, 1963-June 30, 1963

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lowrie, R.

    1963-10-31

    The development and properties of refractory materials are described. Corrosion of zirconium carbide, niobium carbide, and niobium carbide-zirconium carbide systems by carbon dioxide and hydrochloric acid at 2250 deg C is reported. Corrosion of silver-tungsten alloys by carbon dioxide and oxygen at 2150 to 2440 deg K is summarized. Measurements of pyrolytic and ZTA graphite corrosion by carbon dioxide and oxygen at 2100 to 2800 deg K are shown. At 2300 deg C the rate of formation of methane from graphite and hydrogen is greatly reduced by the addition of helium, at constant hydrogen pressure. Up to 2000 deg Cmore » the effect of helium is small. The pyrolysis of methane on graphite at 2000 deg C is tabulated. Oxidation of tungsten to form WO/sub 2/ and WO/sub 3/ is reported. Vaporization of hafnium borides at 2297 to 2538 deg K is analyzed. The lattice parameters of ZrB/sub 2/ at of TiN/sub 0.6/ and TiN/sub 0.75/ are discussed. Powder metallurgical techniques are used to prepare TiB/sub 2/, ZrB/sub 2/, HfB/ sub 2/, NbB/sub 2/, a nd TaB/sub 2/ for detailed x-ray characterization. The electric conductivity of NbC-ZrC systems is reported. General descriptions are given of analytical techniques for free carbon in carbides and spectrographic methods for metallic impurities in carbides and borides. Preliminary roomtemperature measurements are reported of the elastic properties of polycrystalline ZrB/sub 2/. Titanium carbide is brazed to tungsten with a platinum-boron system. A largegrained polycrystalline specimen of ZrC is plastically deformed in creep at 2134 deg C. Metallographic and x-ray examinations of polycrystalline TiC specimens deformed in creep reveal an increasing development with deformation of subgrains having preferred orientation. (N.W.R.)« less

  20. Detonation Synthesis of Alpha-Variant Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Langenderfer, Martin; Johnson, Catherine; Fahrenholtz, William; Mochalin, Vadym

    2017-06-01

    A recent research study has been undertaken to develop facilities for conducting detonation synthesis of nanomaterials. This process involves a familiar technique that has been utilized for the industrial synthesis of nanodiamonds. Developments through this study have allowed for experimentation with the concept of modifying explosive compositions to induce synthesis of new nanomaterials. Initial experimentation has been conducted with the end goal being synthesis of alpha variant silicon carbide (α-SiC) in the nano-scale. The α-SiC that can be produced through detonation synthesis methods is critical to the ceramics industry because of a number of unique properties of the material. Conventional synthesis of α-SiC results in formation of crystals greater than 100 nm in diameter, outside nano-scale. It has been theorized that the high temperature and pressure of an explosive detonation can be used for the formation of α-SiC in the sub 100 nm range. This paper will discuss in detail the process development for detonation nanomaterial synthesis facilities, optimization of explosive charge parameters to maximize nanomaterial yield, and introduction of silicon to the detonation reaction environment to achieve first synthesis of nano-sized alpha variant silicon carbide.

  1. Synthesis of molybdenum carbide superconducting compounds by microwave-plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Hongyang; Cai, Kang; Ma, Zhibin; Cheng, Zhenxiang; Jia, Tingting; Kimura, Hideo; Fu, Qiuming; Tao, Hong; Xiong, Liwei

    2018-02-01

    A method to synthesize molybdenum carbides has been developed based on microwave plasma treatment with methane and hydrogen mixed gases, using a microwave-plasma chemical vapor deposition device. The device framework and its mechanism are described in detail. Two-dimensional α-Mo2C has been directly synthesized by a plate-to-plate substrate holder structure with a microwave power of 920 W and a partial pressure of 20 kPa. In-situ optical emission spectroscopy was used to measure the radical types in the plasma ball during glow discharge. The as-grown α-Mo2C samples were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy to determine their phases, purity and chemical groups. The superconducting transition temperature was measured, and the transition temperatures of the relevant phases are discussed in detail. The results confirmed that this method is an efficient way to obtain molybdenum carbides and inspire new research interest in transition metal carbides, which have many intrinsic local properties and applications.

  2. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    NASA Astrophysics Data System (ADS)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  3. Effect of carbide additions on grain growth in TiC-Ni cermets

    NASA Astrophysics Data System (ADS)

    Shin, Soon-Gi; Lee, Jun-Hee

    2006-02-01

    The growth of carbide particles in TiC-XC-2 vol.% Ni and TiC-XC-30 vol.% Ni alloys, where X=Zr, Cr, W, Ta and Mo, was fitted to an equation of the form d3-do 3=Kt. The grain growth behavior during liquid phase sintering at 1673K decreased markedly with the addition of Mo2C or WC, changed little for TaC, and increased with the addition of ZrC or Cr3C2. The grain contiguity decreased with increasing Ni content in the TiC-Mo2C-Ni alloy and was greater in the alloys with smaller growth rate constant. Consequently, the effect of carbide addition on the grain growth of 2 vol.% Ni alloys was found to be similar to that of 30 vol.% Ni alloys. The grain growth mechanism could be explained by the effect of contiguous carbide grain boundaries in restricting the overall grain growth, as well as the area of the solid/liquid interfaces in the alloy by the usual solution/reprecipitation model.

  4. Results from Mechanical Testing of Silicon Carbide for Space Applications: Non-Destructive Evalution Samples and MISSE-6 Experiment Samples

    DTIC Science & Technology

    2010-06-07

    the materials properties of silicon carbide plates”, S. Kenderian et al., 2009 SPIE Proceedings, vol. 7425 • Materials – 10” x 16” SiC plates...CONFERENCE PROCEEDING 3. DATES COVERED (From - To) 2008-2010 4. TITLE AND SUBTITLE Results from Mechanical Testing of Silicon Carbide for Space...for silicon carbide optical systems that covers material verification through system development. Recent laboratory results for testing of materials

  5. Method of deposition of silicon carbide layers on substrates

    DOEpatents

    Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

    1982-03-19

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

  6. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  7. 44. NORTHEAST VIEW OF IRON DESULPHERIZATION BUILDING, WITH CALCIUM CARBIDE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    44. NORTHEAST VIEW OF IRON DESULPHERIZATION BUILDING, WITH CALCIUM CARBIDE SILO ADJACENT TO BUILDING ON RIGHT. (Jet Lowe) - U.S. Steel Duquesne Works, Blast Furnace Plant, Along Monongahela River, Duquesne, Allegheny County, PA

  8. Hollow spheres of iron carbide nanoparticles encased in graphitic layers as oxygen reduction catalysts.

    PubMed

    Hu, Yang; Jensen, Jens Oluf; Zhang, Wei; Cleemann, Lars N; Xing, Wei; Bjerrum, Niels J; Li, Qingfeng

    2014-04-01

    Nonprecious metal catalysts for the oxygen reduction reaction are the ultimate materials and the foremost subject for low-temperature fuel cells. A novel type of catalysts prepared by high-pressure pyrolysis is reported. The catalyst is featured by hollow spherical morphologies consisting of uniform iron carbide (Fe3 C) nanoparticles encased by graphitic layers, with little surface nitrogen or metallic functionalities. In acidic media the outer graphitic layers stabilize the carbide nanoparticles without depriving them of their catalytic activity towards the oxygen reduction reaction (ORR). As a result the catalyst is highly active and stable in both acid and alkaline electrolytes. The synthetic approach, the carbide-based catalyst, the structure of the catalysts, and the proposed mechanism open new avenues for the development of ORR catalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Performance of biomorphic Silicon Carbide as particulate filter in diesel boilers.

    PubMed

    Orihuela, M Pilar; Gómez-Martín, Aurora; Becerra, José A; Chacartegui, Ricardo; Ramírez-Rico, Joaquín

    2017-12-01

    Biomorphic Silicon Carbide (bioSiC) is a novel porous ceramic material with excellent mechanical and thermal properties. Previous studies have demonstrated that it may be a good candidate for its use as particle filter media of exhaust gases at medium or high temperature. In order to determine the filtration efficiency of biomorphic Silicon Carbide, and its adequacy as substrate for diesel particulate filters, different bioSiC-samples have been tested in the flue gases of a diesel boiler. For this purpose, an experimental facility to extract a fraction of the boiler exhaust flow and filter it under controlled conditions has been designed and built. Several filter samples with different microstructures, obtained from different precursors, have been tested in this bench. The experimental campaign was focused on the measurement of the number and size of particles before and after placing the samples. Results show that the initial efficiency of filters made from natural precursors is severely determined by the cutting direction and associated microstructure. In biomorphic Silicon Carbide derived from radially cut wood, the initial efficiency of the filter is higher than 95%. Nevertheless, when the cut of the wood is axial, the efficiency depends on the pore size and the permeability, reaching in some cases values in the range 70-90%. In this case, the presence of macropores in some of the samples reduces their efficiency as particle traps. In continuous operation, the accumulation of particles within the porous media leads to the formation of a soot cake, which improves the efficiency except in the case when extra-large pores exist. For all the samples, after a few operation cycles, capture efficiency was higher than 95%. These experimental results show the potential for developing filters for diesel boilers based on biomorphic Silicon Carbide. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  11. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  12. 40 CFR 424.40 - Applicability; description of the covered calcium carbide furnaces with wet air pollution control...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... covered calcium carbide furnaces with wet air pollution control devices subcategory. 424.40 Section 424.40... FERROALLOY MANUFACTURING POINT SOURCE CATEGORY Covered Calcium Carbide Furnaces With Wet Air Pollution... with wet air pollution control devices subcategory. The provisions of this subpart are applicable to...

  13. 40 CFR 424.40 - Applicability; description of the covered calcium carbide furnaces with wet air pollution control...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... covered calcium carbide furnaces with wet air pollution control devices subcategory. 424.40 Section 424.40... FERROALLOY MANUFACTURING POINT SOURCE CATEGORY Covered Calcium Carbide Furnaces With Wet Air Pollution... with wet air pollution control devices subcategory. The provisions of this subpart are applicable to...

  14. 40 CFR 424.40 - Applicability; description of the covered calcium carbide furnaces with wet air pollution control...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... covered calcium carbide furnaces with wet air pollution control devices subcategory. 424.40 Section 424.40... FERROALLOY MANUFACTURING POINT SOURCE CATEGORY Covered Calcium Carbide Furnaces With Wet Air Pollution... with wet air pollution control devices subcategory. The provisions of this subpart are applicable to...

  15. 40 CFR 424.40 - Applicability; description of the covered calcium carbide furnaces with wet air pollution control...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... covered calcium carbide furnaces with wet air pollution control devices subcategory. 424.40 Section 424.40... FERROALLOY MANUFACTURING POINT SOURCE CATEGORY Covered Calcium Carbide Furnaces With Wet Air Pollution... with wet air pollution control devices subcategory. The provisions of this subpart are applicable to...

  16. 40 CFR 424.40 - Applicability; description of the covered calcium carbide furnaces with wet air pollution control...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... covered calcium carbide furnaces with wet air pollution control devices subcategory. 424.40 Section 424.40... FERROALLOY MANUFACTURING POINT SOURCE CATEGORY Covered Calcium Carbide Furnaces With Wet Air Pollution... with wet air pollution control devices subcategory. The provisions of this subpart are applicable to...

  17. Investigation of iron adsorption on composite transition metal carbides in steel by first-principles calculation

    NASA Astrophysics Data System (ADS)

    Xiong, Hui-Hui; Gan, Lei; Tong, Zhi-Fang; Zhang, Heng-Hua; Zhou, Yang

    2018-05-01

    The nucleation potential of transition metal (TM) carbides formed in steel can be predicted by the behavior of iron adsorption on their surface. Therefore, Fe adsorption on the (001) surface of (A1-xmx)C (A = Nb, Ti, m = Mo, V) was investigated by the first-principles method to reveal the initialization of Fe nucleation. The Mulliken population and partial density of state (PDOS) were also calculated and analyzed in this work. The results show that Fe adsorption depends on the composition and configuration of the composite carbides. The adsorption energy (Wads) of Fe on most of (A1-xmx)C is larger than that of Fe on pure TiC or NbC. The maximum Wads is found for Fe on (Nb0.5Mo0.5)C complex carbide, indicating that this carbide has the high nucleation capacity at early stage. The Fe adsorption could be improved by the segregation of Cr and Mn atoms on the surfaces of (Nb0.5Mo0.5)C and (Ti0.5Mo0.5)C. The PDOS analysis of (Cr, Mn)-doped systems further explains the strong interactions between Fe and Cr or Mn atoms.

  18. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1978-01-01

    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  19. Analysis of the pyrolysis products of dimethyldichlorosilane in the chemical vapor deposition of silicon carbide in argon

    NASA Technical Reports Server (NTRS)

    Cagliostro, Domenick E.; Riccitiello, Salvatore R.; Carswell, Marty G.

    1990-01-01

    A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyldichlorosilane in argon is presented. Reaction conditions were as follows: 700 to 1100 C, a contact time of about 1 min, and a pressure of 1 atm. At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. The silicon carbide solid that formed showed the presence of hydrogen and chloride as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100 C, forming hydrogen, trichlorosilane, and silicon tetrachloride.

  20. Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

    DOEpatents

    Halverson, Danny C.; Landingham, Richard L.

    1988-01-01

    A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

  1. Thermal conductivity and emissivity measurements of uranium carbides

    NASA Astrophysics Data System (ADS)

    Corradetti, S.; Manzolaro, M.; Andrighetto, A.; Zanonato, P.; Tusseau-Nenez, S.

    2015-10-01

    Thermal conductivity and emissivity measurements on different types of uranium carbide are presented, in the context of the ActiLab Work Package in ENSAR, a project within the 7th Framework Program of the European Commission. Two specific techniques were used to carry out the measurements, both taking place in a laboratory dedicated to the research and development of materials for the SPES (Selective Production of Exotic Species) target. In the case of thermal conductivity, estimation of the dependence of this property on temperature was obtained using the inverse parameter estimation method, taking as a reference temperature and emissivity measurements. Emissivity at different temperatures was obtained for several types of uranium carbide using a dual frequency infrared pyrometer. Differences between the analyzed materials are discussed according to their compositional and microstructural properties. The obtainment of this type of information can help to carefully design materials to be capable of working under extreme conditions in next-generation ISOL (Isotope Separation On-Line) facilities for the generation of radioactive ion beams.

  2. Room-temperature Electrochemical Synthesis of Carbide-derived Carbons and Related Materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gogotsi, Yury

    2015-02-28

    This project addresses room-temperature electrochemical etching as an energy-efficient route to synthesis of 3D nanoporous carbon networks and layered 2D carbons and related structures, as well as provides fundamental understanding of structure and properties of materials produced by this method. Carbide-derived-carbons (CDCs) are a growing class of nanostructured carbon materials with properties that are desirable for many applications, such as electrical energy and gas storage. The structure of these functional materials is tunable by the choice of the starting carbide precursor, synthesis method, and process parameters. Moving from high-temperature synthesis of CDCs through vacuum decomposition above 1400°C and chlorination abovemore » 400°C, our studies under the previous DOE BES support led to identification of precursor materials and processing conditions for CDC synthesis at temperatures as low as 200°C, resulting in amorphous and highly reactive porous carbons. We also investigated synthesis of monolithic CDC films from carbide films at 250-1200°C. The results of our early studies provided new insights into CDC formation, led to development of materials for capacitive energy storage, and enabled fundamental understanding of the electrolyte ions confinement in nanoporous carbons.« less

  3. Highly Dispersed Metal Carbide on ZIF-Derived Pyridinic-N-Doped Carbon for CO2 Enrichment and Selective Hydrogenation.

    PubMed

    Li, Yunhua; Cai, Xiaohu; Chen, Sijing; Zhang, Hua; Zhang, Kevin H L; Hong, Jinqing; Chen, Binghui; Kuo, Dong-Hau; Wang, Wenju

    2018-03-22

    Catalytic conversion of CO 2 into chemicals is a critical issue for energy and environmental research. Among such reactions, converting CO 2 into CO has been regarded as a significant foundation to generate a liquid fuels and chemicals on a large scale. In this work, zeolitic imidazolate framework-derived N-doped carbon-supported metal carbide catalysts (M/ZIF-8-C; M=Ni, Fe, Co and Cu) with highly dispersed metal carbide were prepared for selective CO 2 hydrogenation. Under the same metal loadings, catalytic activity for CO 2 hydrogenation to CO follows the order: Ni/ZIF-8-C≈Fe/ZIF-8-C>Co/ZIF-8-C>Cu/ZIF-8-C. These catalysts are composed of carbide or metal supported on pyridinic N sites within the N-doped carbon structure. ZIF-8-derived pyridinic nitrogen and carbide effect CO 2 adsorption, whereas dispersed Ni or Fe carbide and metal species serve as an active site for CO 2 hydrogenation. The supported Ni catalyst exhibits extraordinary catalytic performance, which results from high dispersion of the metal and exposure of the carbide. Based on high-sensitivity low-energy ion scattering (HS-LEIS) and line scan results, density functional theory (DFT) was used to understand reaction mechanism of selective CO 2 hydrogenation over Ni/ZIF-8-C. The product CO is derived mainly from the direct cleavage of C-O bonds in CO 2 * rather than decomposition of COOH*. The CO* desorption energy on Ni/ZIF-8-C is lower than that for further hydrogenation and dissociation. Comparison of Ni/ZIF-8-C with ZIF-8-C indicates that the combined effects of the highly dispersed metal or carbide and weak CO adsorption result in high CO selectivity for CO 2 hydrogenation. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Method of making carbide/fluoride/silver composites

    NASA Technical Reports Server (NTRS)

    Sliney, Harold E. (Inventor); Dellacorte, Christopher (Inventor)

    1991-01-01

    A composition containing 30 to 70 percent chromium carbide, 5 to 20 percent soft noble metal, 5 to 20 percent metal fluorides, and 20 to 60 percent metal binder is used in a powdered metallurgy process for the production of self-lubricating components, such as bearings. The use of the material allows the self-lubricating bearing to maintain its low friction properties over an extended range of operating temperatures.

  5. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  6. Synthesis of thermal and chemical resistant oxygen barrier starch with reinforcement of nano silicon carbide.

    PubMed

    Dash, Satyabrata; Swain, Sarat K

    2013-09-12

    Starch/silicon carbide (starch/SiC) bionanocomposites were synthesized by solution method using different wt% of silicon carbide with starch matrix. The interaction between starch and silicon carbide was studied by Fourier transform infrared (FTIR) spectroscopy. The structure of the bionanocomposites was investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Thermal property of starch/SiC bionanocomposites was measured and a significant enhancement of thermal resistance was noticed. The oxygen barrier property of the composites was studied and a substantial reduction in permeability was observed as compared to the virgin starch. The reduction of oxygen permeability with enhancement of thermal stability of prepared bionanocomposites may enable the materials suitable for thermal resistant packaging and adhesive applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

  7. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  8. Maintenance of stellite and tungsten carbide saw tips: respiratory health and exposure-response evaluations.

    PubMed Central

    Kennedy, S M; Chan-Yeung, M; Marion, S; Lea, J; Teschke, K

    1995-01-01

    OBJECTIVE--To study exposure to cobalt and chromium in saw maintenance rooms and test respiratory health among saw filers at lumber mills. Hard-metal lung disease is associated with cobalt in the manufacture of tungsten carbide tools; recently it has also been reported among tool maintenance workers. Lumber mills often use saws tipped with tungsten carbide or with a newer alloy, stellite (containing more cobalt, as well as chromium). METHODS--A cross sectional study of 118 saw filers at eight lumber mills was carried out that included a standardised questionnaire, spirometry, personal air sampling, and examination of tasks every 10 minutes (by observation). Comparison data were from a study of bus mechanics tested with similar methods. RESULTS AND CONCLUSION--Cobalt exposure was associated with tungsten carbide grinding but not with stellite grinding. Chromium exposure was associated mainly with stellite welding. Saw filers had a twofold increase in phlegm and wheeze (P < 0.01) and a threefold increase in cough, phlegm, and wheeze related to work (P < 0.001), but no increase in breathlessness. Stellite welding was associated with a significant increase in nasal symptoms and cough related to work and a small decrease in airflow (forced expiratory volume in one second/forced vital capacity (FEV1/FVC%), P < 0.05). Saw filers wet grinding with tungsten carbide had significant reductions in forced expiratory lung volumes (FEV1 and FVC, P < 0.05) and were significantly more likely to have FEV1 and FVC values in the abnormal range. Cobalt exposure (in wet grinding) and duration of work that involved tungsten carbide grinding were both associated with significant reductions in FEV1 and FVC. Average cobalt exposures in this study were about 5 micrograms/m3, well below the currently accepted permissible concentration, which suggests that the current workplace limit for cobalt may be too high. PMID:7735392

  9. Crystallographic characterizations of eutectic and secondary carbides in a Fe-12Cr-2.5Mo-1.5W-3V-1.25C alloy

    NASA Astrophysics Data System (ADS)

    Guo, Jing; Liu, Ligang; Feng, Yunli; Liu, Sha; Ren, Xuejun; Yang, Qingxiang

    2017-03-01

    In this work, the morphology and structures of the eutectic and secondary carbides in a new high chromium Fe-12Cr-2.5Mo-1.5W-3V-1.25C designed for cold-rolling work roll were systematically studied. The precipitated carbides inside the grains and along the grain boundaries were investigated with optical microscope, scanning electron microscopy with energy dispersive spectroscopy, transmission electron microscopy and X-Ray diffraction. Selected area diffraction patterns have been successfully used to identify the crystal formation and lattice constants of the carbides with different alloying elements. The results show that the eutectic carbides precipitated contain MC and M2C distributed along the grain boundaries with dendrite feature. The composition and crystal structure analysis shows that the eutectic MC carbides contain VC and WC with a cubic and hexagonal crystal lattice structures respectively, while the eutectic M2C carbides predominantly contain V2C and Mo2C with orthorhombic and hexagonal crystal lattices respectively. The secondary carbides contain MC, M2C, M7C3 formed along the grain boundaries and their sizes are much larger than the eutectic carbides ones. The secondary M23C6 is much small (0.3-0.5μm) and is distributed dispersively inside the grain. Similar to the eutectic carbides, the secondary carbides also contain VC, WC, V2C, and Mo2C. M7C3 is hexagonal (Fe,Cr)7C3, while M23C6 is indexed to be in a cubic crystal form.

  10. Conventional and Microwave Joining of Silicon Carbide Using Displacement Reactions

    NASA Technical Reports Server (NTRS)

    Kingsley, J.; Yiin, T.; Barmatz, M.

    1995-01-01

    Microwave heating was used to join Silicon Carbide rods using a thin TiC /Si tape interlayer . Microwaves quickly heated the rods and tape to temperatures where solid-state displacement reactions between TiC and Si occurred.

  11. Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

    2007-01-01

    A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

  12. The stability of clay using Portland cement and calsium carbide residue with California bearing ratio (cbr) value

    NASA Astrophysics Data System (ADS)

    Puji Hastuty, Ika; Roesyanto; Novia Sari, Intan; Simanjuntak, Oberlyn

    2018-03-01

    Clay is a type of soil which is often used for stabilization. This is caused by its properties which are very hard in dry conditions and plastic in the medium content of water. However, at a higher level of water, clay will be cohesive and very lenient causing a large volume change due to the influence of water and also causing the soil to expand and shrink for a short period of time. These are the reasons why stabilization is needed in order to increase bearing capacity value of the clay. Stabilization is one of the ways to the conditon of soil that has the poor index properties, for example by adding chemical material to the soil. One of the chemical materials than can be added to the soil is calsium carbide residue. The purpose of this research is to know the fixation of index properties as the effect of adding 2% PC and calsium carbide residue to the clay, and to know the bearing capacity value of CBR (California Bearing Ratio) as the effect of adding the stabilization agent and to know the optimum content of adding calsium carbide residue. The result of the research shows that the usage of 2% cement in the soil that has CBR value 5,76%, and adding 2% cement and 9% calsium carbide residue with a period of curing 14 days has the lagerst of CBR value that is 9,95%. The unsoaked CBR value shows the increase of CBR value upto the mixture content of calsium carbide residue 9% and, decreases at the mixture content of calsium carbide residue 10% and 11%.

  13. Bonding and Integration Technologies for Silicon Carbide Based Injector Components

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay

    2008-01-01

    Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

  14. Crack Free Tungsten Carbide Reinforced Ni(Cr) Layers obtained by Laser Cladding

    NASA Astrophysics Data System (ADS)

    Amado, J. M.; Tobar, M. J.; Yáñez, A.; Amigó, V.; Candel, J. J.

    The development of hardfacing coatings has become technologically significant in many industries A common approach is the production of metal matrix composites (MMC) layers. In this work NiCr-WC MMC hardfacing layers are deposited on C25 steel by means of laser cladding. Spheroidal fused tungsten carbides is used as reinforcement phase. Three different NiCr alloys with different Cr content were tested. Optimum conditions to obtain dense, uniform carbide distribution and hardness close to nominal values were defined. The effect of Cr content respect to the microstructure, susceptibility for cracking and the wear rate of the resulting coating will also be discussed.

  15. Design of boron carbide-shielded irradiation channel of the outer irradiation channel of the Ghana Research Reactor-1 using MCNP.

    PubMed

    Abrefah, R G; Sogbadji, R B M; Ampomah-Amoako, E; Birikorang, S A; Odoi, H C; Nyarko, B J B

    2011-01-01

    The MCNP model for the Ghana Research Reactor-1 was redesigned to incorporate a boron carbide-shielded irradiation channel in one of the outer irradiation channels. Extensive investigations were made before arriving at the final design of only one boron carbide covered outer irradiation channel; as all the other designs that were considered did not give desirable results of neutronic performance. The concept of redesigning a new MCNP model, which has a boron carbide-shielded channel is to equip the Ghana Research Reactor-1 with the means of performing efficient epithermal neutron activation analysis. After the simulation, a comparison of the results from the original MCNP model for the Ghana Research Reactor-1 and the new redesigned model of the boron carbide shielded channel was made. The final effective criticality of the original MCNP model for the GHARR-1 was recorded as 1.00402 while that of the new boron carbide designed model was recorded as 1.00282. Also, a final prompt neutron lifetime of 1.5245 × 10(-4)s was recorded for the new boron carbide designed model while a value of 1.5571 × 10(-7)s was recorded for the original MCNP design of the GHARR-1. Copyright © 2010 Elsevier Ltd. All rights reserved.

  16. Lateral power MOSFETs in silicon carbide

    NASA Astrophysics Data System (ADS)

    Spitz, Jan

    2001-07-01

    Because of its large bandgap, its high critical electric field, and its high quality native SiO2, silicon carbide is considered to be the material of choice for power switching electronics in the future. Until 1997 the maximum thickness of commercially available epilayers serving as the drift region for power devices has been limited to 10--15 mum, limiting the maximum blocking voltage to 1500 V for vertical power devices in silicon carbide. In this study, we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV---more than twice what was previously reported for any SiC MOSFETs---but suffered from low MOS channel mobility caused by the high anneal temperatures (≥1600°C) required to activate the p-type ion-implant. Combining the high blocking-voltage of the vanadium-doped substrate with the higher MOS mobility previously achieved by an epitaxially-grown accumulation channel leads us to the LACCUFET device: No p-type implant is necessary. This device shows a blocking voltage of 2.7 kV unmatched by any SiC transistor until February 2000 combined with a much lower specific on-resistance of 3.6 O•cm2. The ability to combine long-channel test MOSFETs with high channel mobility of 27 cm2/(volt·sec) in 4H-SiC with power devices of 13 cm2/(volt·sec) on the same chip has been demonstrated. The Figure of Merit Vblock 2/Ron,sp for this new NON-RESURF LDMOSFET in 4H-SiC is close to the theoretical limit for vertical power devices made of silicon. The specific on-resistance can be reduced by factor 2.5 by forward-biasing the p-base to source junction by 2 to 3 volts. Basic operation in Static Induction Injection Accumulation FET (SIAFET) mode has been demonstrated. Lateral (Non-Punch-Through) Insulated Gate Bipolar Transistors (LIGBT) have been presented for the first time showing similar on-resistance and blocking voltages but

  17. Method of synthesizing bulk transition metal carbide, nitride and phosphide catalysts

    DOEpatents

    Choi, Jae Soon; Armstrong, Beth L; Schwartz, Viviane

    2015-04-21

    A method for synthesizing catalyst beads of bulk transmission metal carbides, nitrides and phosphides is provided. The method includes providing an aqueous suspension of transition metal oxide particles in a gel forming base, dropping the suspension into an aqueous solution to form a gel bead matrix, heating the bead to remove the binder, and carburizing, nitriding or phosphiding the bead to form a transition metal carbide, nitride, or phosphide catalyst bead. The method can be tuned for control of porosity, mechanical strength, and dopant content of the beads. The produced catalyst beads are catalytically active, mechanically robust, and suitable for packed-bed reactor applications. The produced catalyst beads are suitable for biomass conversion, petrochemistry, petroleum refining, electrocatalysis, and other applications.

  18. Development and characterization of (Ti, Mo)C carbides reinforced Fe-based surface composite coating produced by laser cladding

    NASA Astrophysics Data System (ADS)

    Wang, Xinhong; Zhang, Min; Qu, Shiyao

    2010-09-01

    In this study, in situ multiple carbides reinforced Fe-based surface composite coatings were fabricated successfully by laser cladding a precursor mixture of graphite, ferrotitanium (Fe-Ti) and ferromolybdenum (Fe-Mo) powders. The results showed that (Ti, Mo)C particles with flower-like and cuboidal shapes were in situ formed during the solidification and most shapes of (Ti, Mo)C particles were diversiform according to different contents of Fe-Mo powder in the Fe-Ti-Mo-C system. The growth morphology of the reinforcing (Ti, Mo)C carbide has typically faceted features, indicating that the lateral growth mechanism is still predominant growth mode under rapid solidification conditions. Increasing the amount of Fe-Mo in the reactants led to a decrease of carbide size and an increase of volume fraction of carbides. The coatings had good cracking resistance when the amounts of Fe-Mo were controlled within a range of 15 wt%.

  19. Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

    PubMed

    Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2011-12-01

    Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

  20. Numerical simulation and experiment on split tungsten carbide cylinder of high pressure apparatus

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Yunfei; Li, Mingzhe, E-mail: limz@jlu.edu.cn; Wang, Bolong

    2015-12-15

    A new high pressure device with a split cylinder was investigated on the basis of the belt-type apparatus. The belt-type die is subjected to excessive tangential tensile stress and the tungsten carbide cylinder is easily damaged in the running process. Taking into account the operating conditions and material properties of the tungsten carbide cylinder, it is divided into 6 blocks to eliminate the tangential tensile stress. We studied two forms of the split type: radial split and tangential split. Simulation results indicate that the split cylinder has more uniform stress distribution and smaller equivalent stress compared with the belt-type cylinder.more » The inner wall of the tangential split cylinder is in the situation that compressive stress is distributed in the axial, radial, and tangential directions. It is similar to the condition of hydrostatic pressure, and it is the best condition for tungsten carbide materials. The experimental results also verify that the tangential split die can bear the highest chamber pressure. Therefore, the tangential split structure can increase the pressure bearing capacity significantly.« less

  1. Tribological properties and surface chemistry of silicon carbide at temperatures to 1500 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1981-01-01

    Silicon carbide surfaces were heated to 1500 C in a vacuum and analyzed at room temperature with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The basic unit of the surfaces was considered as a plane of a tetrahedron of either SiC4 and CSi4 composition. AES spectra were obtained from 250-1500 C, with an analysis depth of 1 nm revealed the presence of little Si and mostly graphite. XPS analysis depth was 2 nm or less, and Si was found in the second 1 nm. Sliding friction tests with single-crystal silicon carbide in contact with iron in a vacuum were characterized by a stock-slip value. The coefficient of friction increased with increasing temperature up to 400 C, then decreased with increasing temperature from 400-600 C. Reheating surfaces to 800 C after preheating them to that temperature produced no changes in AES readings. It is concluded that the maximum density of silicon and silicon-carbide is at 800 C, and the higher the sliding temperature, the more metal that is transferred.

  2. Powder Processing of High Temperature Cermets and Carbides at Marshall Space Flight Center

    NASA Technical Reports Server (NTRS)

    Salvail, Pat; Panda, Binayak; Hickman, Robert R.

    2007-01-01

    The Materials and Processing Laboratory at NASA Marshall Space Flight Center is developing Powder Metallurgy (PM) processing techniques for high temperature cermet and carbide material consolidation. These new group of materials would be utilized in the nuclear core for Nuclear Thermal Rockets (NTR). Cermet materials offer several advantages for NTR such as retention of fission products and fuels, better thermal shock resistance, hydrogen compatibility, high thermal conductivity, and high strength. Carbide materials offer the highest operating temperatures but are sensitive to thermal stresses and are difficult to process. To support the effort, a new facility has been setup to process refractory metal, ceramic, carbides and depleted uranium-based powders. The facility inciudes inert atmosphere glove boxes for the handling of reactive powders, a high temperature furnace, and powder processing equipment used for blending, milling, and sieving. The effort is focused on basic research to identify the most promising compositions and processing techniques. Several PM processing methods including Cold and Hot Isostatic Pressing are being evaluated to fabricate samples for characterization and hot hydrogen testing.

  3. Measurement and Simulation of Thermal Conductivity of Hafnium-Aluminum Thermal Neutron Absorber Material

    DOE PAGES

    Guillen, Donna Post; Harris, William H.

    2016-05-11

    A metal matrix composite (MMC) material comprised of hafnium aluminide (Al3Hf) intermetallic particles in an aluminum matrix has been identified as a promising material for fast-flux irradiation testing applications. This material can filter thermal neutrons while simultaneously providing high rates of conductive cooling for experiment capsules. Our purpose is to investigate effects of Hf-Al material composition and neutron irradiation on thermophysical properties, which were measured before and after irradiation. When performing differential scanning calorimetry (DSC) on the irradiated specimens, a large exotherm corresponding to material annealment was observed. Thus, a test procedure was developed to perform DSC and laser flashmore » analysis (LFA) to obtain the specific heat and thermal diffusivity of pre- and post-annealment specimens. This paper presents the thermal properties for three states of the MMC material: (1) unirradiated, (2) as-irradiated, and (3) irradiated and annealed. Microstructure-property relationships were obtained for the thermal conductivity. These relationships are useful for designing components from this material to operate in irradiation environments. Furthermore, the ability of this material to effectively conduct heat as a function of temperature, volume fraction Al 3Hf, radiation damage and annealing is assessed using the MOOSE suite of computational tools.« less

  4. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  5. Low blow Charpy impact of silicon carbides

    NASA Technical Reports Server (NTRS)

    Abe, H.; Chandan, H. C.; Bradt, R. C.

    1978-01-01

    The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

  6. Preparation of silicon carbide fibers

    DOEpatents

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  7. Processing and fabrication of mixed uranium/refractory metal carbide fuels with liquid-phase sintering

    NASA Astrophysics Data System (ADS)

    Knight, Travis W.; Anghaie, Samim

    2002-11-01

    Optimization of powder processing techniques were sought for the fabrication of single-phase, solid-solution mixed uranium/refractory metal carbide nuclear fuels - namely (U, Zr, Nb)C. These advanced, ultra-high temperature nuclear fuels have great potential for improved performance over graphite matrix, dispersed fuels tested in the Rover/NERVA program of the 1960s and early 1970s. Hypostoichiometric fuel samples with carbon-to-metal ratios of 0.98, uranium metal mole fractions of 5% and 10%, and porosities less than 5% were fabricated. These qualities should provide for the longest life and highest performance capability for these fuels. Study and optimization of processing methods were necessary to provide the quality assurance of samples for meaningful testing and assessment of performance for nuclear thermal propulsion applications. The processing parameters and benefits of enhanced sintering by uranium carbide liquid-phase sintering were established for the rapid and effective consolidation and formation of a solid-solution mixed carbide nuclear fuel.

  8. Grain boundary character, and carbide size and spatial distribution in a ternary nickel alloy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, H.; Gao, M.; Harlow, D.G.

    1995-06-01

    A preliminary investigation of the grain boundary character and its relationship to carbide distribution in a Ni-18Cr-18Fe ternary alloy was conducted. The results showed that there was a strong preference for the formation of {Sigma}3 (44.6%) and twin-related {Sigma}9 and {Sigma}27 CSL boundaries. If the coherent {Sigma}3{sub c} twin and the twin-related boundaries are excluded, then the distribution would consist of nearly 80% random (high angle) boundaries and about 20% CSL (with {Sigma} {<=} 49) boundaries. The size and spacing of grain boundary carbides were influenced by grain boundary {Sigma}; the carbides being smaller and more closely spaced on themore » {Sigma}1, {Sigma}9 and {Sigma}27 boundaries, and none could be resolved on the coherent {Sigma}3 twin boundaries. The results could be understood, in part, in terms of the influence of grain boundary energy, but the understanding is incomplete. Further studies are in progress and will be reported.« less

  9. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOEpatents

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  10. Experimental investigation of in-situ transformations of the M 7C3 carbide in the cast Fe-Cr-Ni alloy

    NASA Astrophysics Data System (ADS)

    Kraposhin, V. S.; Kondrat'ev, S. Yu.; Talis, A. L.; Anastasiadi, G. P.

    2017-03-01

    The microstructure and the phase composition of a heat-resistant Fe-Cr-Ni alloy (0. 45C-25Cr-35Ni) has been investigated in the cast state and after annealing at 1150°C for 2-100 h. After a 2-h high-temperature annealing, the fragmentation of the crystal structure of the eutectic M 7C3 carbides into domains of 500 nm in size with a partial transition into M 23C6 carbides is observed. After a 100-h holding, the complete transition of the hexagonal M 7C3 carbides into M 23C6 with a face-centered cubic structure occurs. The carbide transition M 7C3 → M 23 can be considered to be an in situ transformation.

  11. A Review of Metal Injection Molding- Process, Optimization, Defects and Microwave Sintering on WC-Co Cemented Carbide

    NASA Astrophysics Data System (ADS)

    Shahbudin, S. N. A.; Othman, M. H.; Amin, Sri Yulis M.; Ibrahim, M. H. I.

    2017-08-01

    This article is about a review of optimization of metal injection molding and microwave sintering process on tungsten cemented carbide produce by metal injection molding process. In this study, the process parameters for the metal injection molding were optimized using Taguchi method. Taguchi methods have been used widely in engineering analysis to optimize the performance characteristics through the setting of design parameters. Microwave sintering is a process generally being used in powder metallurgy over the conventional method. It has typical characteristics such as accelerated heating rate, shortened processing cycle, high energy efficiency, fine and homogeneous microstructure, and enhanced mechanical performance, which is beneficial to prepare nanostructured cemented carbides in metal injection molding. Besides that, with an advanced and promising technology, metal injection molding has proven that can produce cemented carbides. Cemented tungsten carbide hard metal has been used widely in various applications due to its desirable combination of mechanical, physical, and chemical properties. Moreover, areas of study include common defects in metal injection molding and application of microwave sintering itself has been discussed in this paper.

  12. Hydrogen adsorption in metal-decorated silicon carbide nanotubes

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-09-01

    Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

  13. Two-Dimensional, Ordered, Double Transition Metals Carbides (MXenes)

    DOE PAGES

    Anasori, Babak; Xie, Yu; Beidaghi, Majid; ...

    2015-07-24

    The higher the chemical diversity and structural complexity of two-dimensional (2D) materials, the higher the likelihood they possess unique and useful properties. In this paper, density functional theory (DFT) is used to predict the existence of two new families of 2D ordered, carbides (MXenes), M' 2M"C 2 and M' 2M" 2C 3, where M' and M" are two different early transition metals. In these solids, M' layers sandwich M" carbide layers. By synthesizing Mo 2TiC 2T x, Mo 2Ti 2C 3T x, and Cr 2TiC 2T x (where T is a surface termination), we validated the DFT predictions. Since themore » Mo and Cr atoms are on the outside, they control the 2D flakes’ chemical and electrochemical properties. The latter was proven by showing quite different electrochemical behavior of Mo 2TiC 2T x and Ti 3C 2T x. Finally, this work further expands the family of 2D materials, offering additional choices of structures, chemistries, and ultimately useful properties.« less

  14. Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study

    NASA Astrophysics Data System (ADS)

    Somogyi, Bálint; Zólyomi, Viktor; Gali, Adam

    2012-11-01

    Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the near-infrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

  15. On the genesis of molybdenum carbide phases during reduction-carburization reactions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Guil-Lopez, R., E-mail: rut.guil@icp.csic.es; Nieto, E.; Departamento de Tecnologia Quimica y Energetica, ESCET, Universidad Rey Juan Carlos, C/Tulipan s/n, 28933-Mostoles

    2012-06-15

    Molybdenum carbide has been prepared according to the carbothermal reduction method. Carbon black substrate was used as C-source whereas a H{sub 2}-flow was the reducing agent. Two different H{sub 2} consumption steps were identified during the carburization treatment. The low temperature step is related to the reduction of Mo{sup 6+}-to-Mo{sup 4+}, the higher temperature process accounts for the deep reduction of Mo{sup 4+}-to-metal Mo{sup 0} and its subsequent reaction with C to form the Mo-carbide. The influences of the maximum carburization temperature, carburization time, gas hourly space velocity regarding Mo-loading, heating rate and temperature of Ar pre-treatment were analyzed. Allmore » these conditions are interrelated to each other. Thus, the carburization process ends at 700 Degree-Sign C when Mo-loading is 10 wt%, however Mo-loading higher than 10 wt% requires higher temperatures. Carburization temperatures up to 800 Degree-Sign C are needed to fulfill Mo-carbide formation with samples containing 50 wt% Mo. Nevertheless, Ar pre-treatment at 550 Degree-Sign C and slow heating rates favor the carburization, thus requiring lower carburization temperatures to reach the same carburization level. - Graphical Abstract: H{sub 2}-consumption profile (TPR) during the molybdenum carburization process, XRD patterns of the reduced Mo-samples after carburization and TEM-micrographs with two different enlargement of the samples with 5, 20 and 50 wt% Mo. Highlights: Black-Right-Pointing-Pointer Control of carburization variables: tailor the reduced/carbide Mo-phases (single/mixture). Black-Right-Pointing-Pointer Mo carburization in two stages: (1) Mo{sup 6+}-Mo{sup 4+}; (2) Mo{sup 4+}-Mo{sup 0} and, at once, MoC. Black-Right-Pointing-Pointer The carburization process is faster than Mo{sup 4+} reduction. Black-Right-Pointing-Pointer XPS probed: reduced Mo particles show core-shell structure. Black-Right-Pointing-Pointer Core: reduced Mo (Mo{sub 2}C, MoO{sub 2} and

  16. Abrasive wear behavior of heat-treated ABC-silicon carbide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da

    2002-06-17

    Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

  17. Nuclear breeder reactor fuel element with silicon carbide getter

    DOEpatents

    Christiansen, David W.; Karnesky, Richard A.

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  18. Uranium carbide fission target R&D for RIA - an update

    NASA Astrophysics Data System (ADS)

    Greene, J. P.; Levand, A.; Nolen, J.; Burtseva, T.

    2004-12-01

    For the Rare Isotope Accelerator (RIA) facility, ISOL targets employing refractory compounds of uranium are being developed to produce radioactive ions for post-acceleration. The availability of refractory uranium compounds in forms that have good thermal conductivity, relatively high density, and adequate release properties for short-lived isotopes remains an important issue. Investigations using commercially obtained uranium carbide material and prepared into targets involving various binder materials have been carried out at ANL. Thin sample pellets have been produced for measurements of thermal conductivity using a new method based on electron bombardment with the thermal radiation observed using a two-color optical pyrometer and performed on samples as a function of grain size, pressing pressure and sintering temperature. Manufacture of uranium carbide powder has now been achieved at ANL. Simulations have been carried out on the thermal behavior of the secondary target assembly incorporating various heat shield configurations.

  19. Coarsening behaviour of M23C6 carbides in creep-resistant steel exposed to high temperatures

    NASA Astrophysics Data System (ADS)

    Godec, M.; Skobir Balantič, D. A.

    2016-07-01

    High operating temperatures can have very deleterious effects on the long-term performance of high-Cr, creep-resistant steels used, for example, in the structural components of power plants. For the popular creep-resistant steel X20CrMoV12.1 we analysed the processes of carbide growth using a variety of analytical techniques: transmission electron microscopy (TEM) and diffraction (TED), scanning electron microscopy (SEM), and electron backscatter diffraction (EBSD). The evolution of the microstructure after different aging times was the basis for a much better understanding of the boundary-migration processes and the growth of the carbides. We present an explanation as to why some locations are preferential for this growth, and using EBSD we were able to define the proper orientational relationship between the carbides and the matrix.

  20. Tribological evaluation of high-speed steels with a regulated carbide phase

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Richter, Janusz

    2003-06-15

    Wear resistance of a commercial steel and titanium-niobium high-speed steels with a regulated carbide phase was evaluated by employing a micro-scale abrasive wear test with alumina particles. The worn volumes and corresponding wear coefficients were the lowest for the new non-ledeburitic grades containing titanium, then the two niobium grades, the conventional (both wrought and by powder metallurgy) steels exhibited the worse wear resistance. Fractography SEM observations together with energy-dispersive X-ray (EDX) chemical analysis revealed the decisive role of the steels' MC particles in the wear process. These carbides influenced the abrasion by stoppage of the wear scars and/or changing theirmore » trajectories. Directional and nondirectional abrasion modes in the steels tested using alumina and carborundum abrasives were found and are discussed.« less