Sample records for hafnium compounds

  1. Hafnium radioisotope recovery from irradiated tantalum

    DOEpatents

    Taylor, Wayne A.; Jamriska, David J.

    2001-01-01

    Hafnium is recovered from irradiated tantalum by: (a) contacting the irradiated tantalum with at least one acid to obtain a solution of dissolved tantalum; (b) combining an aqueous solution of a calcium compound with the solution of dissolved tantalum to obtain a third combined solution; (c) precipitating hafnium, lanthanide, and insoluble calcium complexes from the third combined solution to obtain a first precipitate; (d) contacting the first precipitate of hafnium, lanthanide and calcium complexes with at least one fluoride ion complexing agent to form a fourth solution; (e) selectively adsorbing lanthanides and calcium from the fourth solution by cationic exchange; (f) separating fluoride ion complexing agent product from hafnium in the fourth solution by adding an aqueous solution of ferric chloride to obtain a second precipitate containing the hafnium and iron; (g) dissolving the second precipitate containing the hafnium and iron in acid to obtain an acid solution of hafnium and iron; (h) selectively adsorbing the iron from the acid solution of hafnium and iron by anionic exchange; (i) drying the ion exchanged hafnium solution to obtain hafnium isotopes. Additionally, if needed to remove residue remaining after the product is dried, dissolution in acid followed by cation exchange, then anion exchange, is performed.

  2. PRODUCTION OF METALS AND THEIR COMPOUNDS

    DOEpatents

    Arden, T.V.; Burstall, F.H.; Davies, G.R.; Linstead, R.P.; Wells, R.A.

    1958-11-18

    Zirconium nitrate can be separated from hafnium nitrate by mixing the nitrates with ethyl cellulose pulp, eluting the mass with diethyl ether containing nitric acid, and passing the eluent through a column of cellulose pulp the outflow of which is substantially free of hafnium.

  3. Hafnium(IV) chloride complexes with chelating β-ketiminate ligands: Synthesis, spectroscopic characterization and volatility study

    NASA Astrophysics Data System (ADS)

    Patil, Siddappa A.; Medina, Phillip A.; Antic, Aleks; Ziller, Joseph W.; Vohs, Jason K.; Fahlman, Bradley D.

    2015-09-01

    The synthesis and characterization of four new β-ketiminate hafnium(IV) chloride complexes dichloro-bis[4-(phenylamido)pent-3-en-2-one]-hafnium (4a), dichloro-bis[4-(4-methylphenylamido)pent-3-en-2-one]-hafnium (4b), dichloro-bis[4-(4-methoxyphenylamido)pent-3-en-2-one]-hafnium (4c), and dichloro-bis[4-(4-chlorophenylamido)pent-3-en-2-one]-hafnium (4d) are reported. All the complexes (4a-d) were characterized by spectroscopic methods (1H NMR, 13C NMR, IR), and elemental analysis while the compound 4c was further examined by single-crystal X-ray diffraction, revealing that the complex is monomer with the hafnium center in octahedral coordination environment and oxygens of the chelating N-O ligands are trans to each other and the chloride ligands are in a cis arrangement. Volatile trends are established for four new β-ketiminate hafnium(IV) chloride complexes (4a-d). Sublimation enthalpies (ΔHsub) were calculated from thermogravimetric analysis (TGA) data, which show that, the dependence of ΔHsub on the molecular weight (4a-c) and inductive effects from chlorine (4d).

  4. Etude de la nitruration carbothermique du dioxyde de hafnium par diffraction X à haute température

    NASA Astrophysics Data System (ADS)

    Pialoux, A.

    1993-03-01

    The carbothermal reduction of hafnium dioxide under atmospheric level nitrogen pressure has been investigated using a graphite resistance high temperature X-ray diffractometer up to around 2300 K. A carbon transfer reaction through the gaseous phase (N 2, CO/CO 2) is shown to precede, then to compete the direct reduction of the hafnium oxide by the graphite in pure nitrogen. A complex mechanism has been found that accounts for the formation of hafnium dioxynitride and possibly of three other hafnium oxynitrides, then of hafnium mononitride and hafnium monocarbonitride, along two different steps between 1613 and 1923 K. An evaluation has been made concerning the composition of these γ 1- HfO 2-xN x/2□ x/2 (CaF 2-type structure), γ 2- Hf 7O 11N 2, γ 3- Hf 7O 8N 4 (rhombohedral), γ 4- Hf 2ON 2 (Mn 2O 3-type structure), HfN and HfN 1-zC z (NaCl-type structure) phases, considering the variations of their lattice parameters and the available data in the literature, especially on the isomorphous compounds of zirconium. It must be emphasized the new γ 1- HfO 2-xN x/2 phase, the dilatation of which is linear ( overlineα = 12×10 -6K -1), shows a constant composition from 2158 down to 1473 K (x ≈ 0,2). But under 1473 K, inevitably, the hafnium dioxynitride disappears, and poorly crystallized monoclinic αHfO 2 and rhombohedral γ 2- Hf 7O 11N 2 are formed.

  5. Design of thermoelectrically highly efficient Heusler compounds using phase separations and nano-composites under an economic point of view

    NASA Astrophysics Data System (ADS)

    Balke, Benjamin

    Half-Heusler (HH) compounds are one of the most promising candidates for thermoelectric materials for automotive and industrial waste heat recovery applications. In this talk, I will give an overview about our recent investigations of phase separations in HH thermoelectrics, focusing on the ternary system TiNiSn-ZrNiSn-HfNiSn. I will show how we adapted this knowledge to design a p-type HH compound which exhibits a ZT that is increased by 130% compared to the best published bulk p-type Heusler. I will also present how we used the phase separation to design thermoelectric highly efficient nano-composites of different single-phase materials. Since the price for Hafnium doubled within the last year, our research focused on the design of HH compounds without Hafnium. I will present a very recent calculation on ZT per Euro and efficiency per Euro for various materials followed by our latest very promising results for n-type Heusler compunds without Hafnium resulting in 20 times higher ZT/Euro values. These results strongly underline the importance of phase separations as a powerful tool for designing highly efficient materials for thermoelectric applications that fulfill the industrial demands for a thermoelectric converter. The author gratefully acknowledges financial support by the thermoHEUSLER2 Project (Project No. 19U15006F) of the German Federal Ministry of Economics and Technology (BMWi).

  6. Metal-Element Compounds of Titanium, Zirconium, and Hafnium as Pyrotechnic Fuels

    DTIC Science & Technology

    2015-05-04

    including ceramic materials in this role has been far less common. Following the development of boron carbide-based pyrotechnics in our laboratories, we...ameliorate these problems. Commercially available group 4 compounds containing hydrogen, boron , carbon, nitrogen, silicon, and phosphorus were obtained for...predicted behavior suggests that these compounds may be useful for a variety of pyrotechnic applications. 1. INTRODUCTION The recent use of boron

  7. SEPARATING HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Lister, B.A.J.; Duncan, J.F.; Hutcheon, J.M.

    1956-08-21

    Substantially complete separation of zirconium from hafnium may be obtained by elution of ion exchange material, on which compounds of the elements are adsorbed, with an approximately normal solution of sulfuric acid. Preferably the acid concentration is between 0.8 N amd 1.2 N, amd should not exceed 1.5 N;. Increasing the concentration of sulfate ion in the eluting solution by addition of a soluble sulfate, such as sodium sulfate, has been found to be advantageous. The preferred ion exchange materials are sulfonated polystyrene resins such as Dowex 50,'' and are preferably arranged in a column through which the solutions are passed.

  8. Structural stability and electronic structure of transition metal compound: HfN

    NASA Astrophysics Data System (ADS)

    Sarwan, Madhu; Shukoor, V. Abdul; Singh, Sadhna

    2018-05-01

    The structural stability of transition metal nitride (HfN) has been investigated using density functional theory (DFT) with the help of Quantum-espresso codes. Our calculations confirm that the hafnium nitride (HfN) is stable in zinc-blende (B3) and rock-salt (B1) type structure. We have also reported the structural and electronic properties of HfN compound. These structural properties have been compared with experimental and theoretical data available on this compound.

  9. Metal alkoxides and methods of making same

    DOEpatents

    Hentges, Patrick J.; Greene, Laura H.; Pafford, Margaret Mary; Westwood, Glenn; Klemperer, Walter G.

    2005-01-04

    A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor. The metal alkoxide may be a compound of formula (I): where M is zirconium or hafnium, and the purity of the compound is at least 97% as measured by NMR spectroscopy.

  10. Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

    NASA Astrophysics Data System (ADS)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

  11. Method for locating metallic nitride inclusions in metallic alloy ingots

    DOEpatents

    White, Jack C.; Traut, Davis E.; Oden, Laurance L.; Schmitt, Roman A.

    1992-01-01

    A method of determining the location and history of metallic nitride and/or oxynitride inclusions in metallic melts. The method includes the steps of labeling metallic nitride and/or oxynitride inclusions by making a coreduced metallic-hafnium sponge from a mixture of hafnium chloride and the chloride of a metal, reducing the mixed chlorides with magnesium, nitriding the hafnium-labeled metallic-hafnium sponge, and seeding the sponge to be melted with hafnium-labeled nitride inclusions. The ingots are neutron activated and the hafnium is located by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

  12. Neutron absorbers and methods of forming at least a portion of a neutron absorber

    DOEpatents

    Guillen, Donna P; Porter, Douglas L; Swank, W David; Erickson, Arnold W

    2014-12-02

    Methods of forming at least a portion of a neutron absorber include combining a first material and a second material to form a compound, reducing the compound into a plurality of particles, mixing the plurality of particles with a third material, and pressing the mixture of the plurality of particles and the third material. One or more components of neutron absorbers may be formed by such methods. Neutron absorbers may include a composite material including an intermetallic compound comprising hafnium aluminide and a matrix material comprising pure aluminum.

  13. Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

    NASA Astrophysics Data System (ADS)

    Habuka, Hitoshi; Yamaji, Masahiko; Kobori, Yoshitsugu; Horii, Sadayoshi; Kunii, Yasuo

    2009-12-01

    Hydrogen chloride gas removes the hafnium oxide film formed by atomic layer deposition at the etch rate of about 1 nm/min. A 100 nm-thick hafnium oxide film was perfectly etched off at 1173 K for 60 min by 100% hydrogen chloride gas at 100 sccm. A weight decrease in the hafnium oxide film was observed at temperatures higher than ca. 600 K, which corresponds to the sublimation point of hafnium tetrachloride. The etching by-product is considered to be hafnium tetrachloride. The etching technique developed in this study is expected to be applicable to various processes, such as the cleaning of a hafnium oxide film deposition reactor.

  14. PRODUCTION OF METALS

    DOEpatents

    Spedding, F.H.; Wilhelm, H.A.; Keller, W.H.

    1961-09-19

    A process is described producing metallic thorium, titanium, zirconium, or hafnium from the fluoride. In the process, the fluoride is reduced with alkali or alkaline earth metal and a booster compound (e.g. iodine or a decomposable oxysalt) in a sealed bomb at superatmospheric pressure and a temperature above the melting point of the metal to be produced.

  15. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOEpatents

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  16. The formation and study of titanium, zirconium, and hafnium complexes

    NASA Technical Reports Server (NTRS)

    Wilson, Bobby; Sarin, Sam; Smith, Laverne; Wilson, Melanie

    1989-01-01

    Research involves the preparation and characterization of a series of Ti, Zr, Hf, TiO, and HfO complexes using the poly(pyrazole) borates as ligands. The study will provide increased understanding of the decomposition of these coordination compounds which may lead to the production of molecular oxygen on the Moon from lunar materials such as ilmenite and rutile. The model compounds are investigated under reducing conditions of molecular hydrogen by use of a high temperature/pressure stainless steel autoclave reactor and by thermogravimetric analysis.

  17. 40 CFR 471.90 - Applicability; description of the zirconium-hafnium forming subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... zirconium-hafnium forming subcategory. 471.90 Section 471.90 Protection of Environment ENVIRONMENTAL... POINT SOURCE CATEGORY Zirconium-Hafnium Forming Subcategory § 471.90 Applicability; description of the zirconium-hafnium forming subcategory. This subpart applies to discharges of pollutants to waters of the...

  18. 40 CFR 421.330 - Applicability: Description of the primary zirconium and hafnium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary zirconium and hafnium subcategory. 421.330 Section 421.330 Protection of Environment ENVIRONMENTAL... CATEGORY Primary Zirconium and Hafnium Subcategory § 421.330 Applicability: Description of the primary zirconium and hafnium subcategory. The provisions of this subpart are applicable to discharges resulting...

  19. Ablation Resistant Zirconium and Hafnium Ceramics

    NASA Technical Reports Server (NTRS)

    Bull, Jeffrey (Inventor); White, Michael J. (Inventor); Kaufman, Larry (Inventor)

    1998-01-01

    High temperature ablation resistant ceramic composites have been made. These ceramics are composites of zirconium diboride and zirconium carbide with silicon carbide, hafnium diboride and hafnium carbide with silicon carbide and ceramic composites which contain mixed diborides and/or carbides of zirconium and hafnium. along with silicon carbide.

  20. Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

    NASA Astrophysics Data System (ADS)

    Li, Min

    High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a negative flat band voltage shift and larger hysteresis relative to the HF-dipped samples. The IL EOT reduction by mtridation increases with increasing HE Surface nitridation also induces extra charge, more considerable at the Si/IL interface. The leakage current is reduced in the Hf-rich samples with a nitride layer. Electron mobility degradation by surface nitridation was also observed.

  1. Efficient UV-emitting X-ray phosphors: octahedral Zr(PO 4) 6 luminescence centers in potassium hafnium-zirconium phosphates K 2Hf 1- xZr x(PO 4) 2 and KHf 2(1- x) Zr 2 x(PO 4) 3

    NASA Astrophysics Data System (ADS)

    Torardi, C. C.; Miao, C. R.; Li, J.

    2003-02-01

    Potassium hafnium-zirconium phosphates, K 2Hf 1- xZr x(PO 4) 2 and KHf 2(1- x) Zr 2 x(PO 4) 3, are broad-band UV-emitting phosphors. At room temperature, they have emission peak maxima at approximately 322 and 305 nm, respectively, under 30 kV peak molybdenum X-ray excitation. Both phosphors demonstrate luminescence efficiencies that make them up to ˜60% as bright as commercially available CaWO 4 Hi-Plus. The solid-state and flux synthesis conditions, and X-ray excited UV luminescence of these two phosphors are discussed. Even though the two compounds have different atomic structures, they contain zirconium in the same active luminescence environment as that found in highly efficient UV-emitting BaHf 1- xZr x(PO 4) 2. All the three materials have hafnium and zirconium in octahedral coordination via oxygen-atom corner sharing with six separate PO 4 tetrahedra. This octahedral Zr(PO 4) 6 moiety appears to be an important structural element for efficient X-ray excited luminescence, as are the edge-sharing octahedral TaO 6 chains for tantalate emission.

  2. PRODUCTION OF HAFNIUM METAL

    DOEpatents

    Elger, G.W.; Boubel, R.W.

    1963-01-01

    This patent deals with a process of producing pure Hf metal from oxygen- contaminated gaseous Hf chloride. The oxygen compounds in the chioride gas are halogenated by contacting the gas at elevated temperature with Cl/sub 2/ in the presence of C. The Hf chloride, still in gaseous form, is contacted with molten Mg whereby Hf metal is formed and condensed on the Mg. (AEC)

  3. A simple spectrophotometric method for determination of zirconium or hafnium in selected molybdenum-base alloys

    NASA Technical Reports Server (NTRS)

    Dupraw, W. A.

    1972-01-01

    A simple analytical procedure is described for accurately and precisely determining the zirconium or hafnium content of molybdenum-base alloys. The procedure is based on the reaction of the reagent Arsenazo III with zirconium or hafnium in strong hydrochloric acid solution. The colored complexes of zirconium or hafnium are formed in the presence of molybdenum. Titanium or rhenium in the alloy have no adverse effect on the zirconium or hafnium complex at the following levels in the selected aliquot: Mo, 10 mg; Re, 10 mg; Ti, 1 mg. The spectrophotometric measurement of the zirconium or hafnium complex is accomplished without prior separation with a relative standard deviation of 1.3 to 2.7 percent.

  4. Cesium hafnium chloride: A high light yield, non-hygroscopic cubic crystal scintillator for gamma spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Burger, Arnold, E-mail: aburger@fisk.edu; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235; Rowe, Emmanuel

    We report on the scintillation properties of Cs{sub 2}HfCl{sub 6} (cesium hafnium chloride or CHC) as an example of a little-known class of non-hygroscopic compounds having the generic cubic crystal structure of K{sub 2}PtCl{sub 6}. The crystals are easily growable from the melt using the Bridgman method with minimal precursor treatments or purification. CHC scintillation is centered at 400 nm, with a principal decay time of 4.37 μs and a light yield of up to 54 000 photons/MeV when measured using a silicon CCD photodetector. The light yield is the highest ever reported for an undoped crystal, and CHC also exhibits excellent lightmore » yield nonproportionality. These desirable properties allowed us to build and test CHC gamma-ray spectrometers providing energy resolution of 3.3% at 662 keV.« less

  5. Hafnium isotope stratigraphy of ferromanganese crusts

    PubMed

    Lee; Halliday; Hein; Burton; Christensen; Gunther

    1999-08-13

    A Cenozoic record of hafnium isotopic compositions of central Pacific deep water has been obtained from two ferromanganese crusts. The crusts are separated by more than 3000 kilometers but display similar secular variations. Significant fluctuations in hafnium isotopic composition occurred in the Eocene and Oligocene, possibly related to direct advection from the Indian and Atlantic oceans. Hafnium isotopic compositions have remained approximately uniform for the past 20 million years, probably reflecting increased isolation of the central Pacific. The mechanisms responsible for the increase in (87)Sr/(86)Sr in seawater through the Cenozoic apparently had no effect on central Pacific deep-water hafnium.

  6. METHOD OF COATING GRAPHITE WITH STABLE METAL CARBIDES AND NITRIDES

    DOEpatents

    Gurinsky, D.H.

    1959-10-27

    A method is presented for forming protective stable nitride and carbide compounds on the surface of graphite. This is accomplished by contacting the graphite surface with a fused heavy liquid metal such as bismuth or leadbismuth containing zirconium, titanium, and hafnium dissolved or finely dispersed therein to form a carbide and nitride of at least one of the dissolved metals on the graphite surface.

  7. High rate buffer layer for IBAD MgO coated conductors

    DOEpatents

    Foltyn, Stephen R [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  8. SEPARATION OF HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Overholser, L.B.; Barton, C.J. Sr.; Ramsey, J.W.

    1960-05-31

    The separation of hafnium impurities from zirconium can be accomplished by means of organic solvent extraction. The hafnium-containing zirconium feed material is dissolved in an aqueous chloride solution and the resulting solution is contacted with an organic hexone phase, with at least one of the phases containing thiocyanate. The hafnium is extracted into the organic phase while zirconium remains in the aqueous phase. Further recovery of zirconium is effected by stripping the onganic phase with a hydrochloric acid solution and commingling the resulting strip solution with the aqueous feed solution. Hexone is recovered and recycled by means of scrubbing the onganic phase with a sulfuric acid solution to remove the hafnium, and thiocyanate is recovered and recycled by means of neutralizing the effluent streams to obtain ammonium thiocyanate.

  9. Hafnium-Based Contrast Agents for X-ray Computed Tomography.

    PubMed

    Berger, Markus; Bauser, Marcus; Frenzel, Thomas; Hilger, Christoph Stephan; Jost, Gregor; Lauria, Silvia; Morgenstern, Bernd; Neis, Christian; Pietsch, Hubertus; Sülzle, Detlev; Hegetschweiler, Kaspar

    2017-05-15

    Heavy-metal-based contrast agents (CAs) offer enhanced X-ray absorption for X-ray computed tomography (CT) compared to the currently used iodinated CAs. We report the discovery of new lanthanide and hafnium azainositol complexes and their optimization with respect to high water solubility and stability. Our efforts culminated in the synthesis of BAY-576, an uncharged hafnium complex with 3:2 stoichiometry and broken complex symmetry. The superior properties of this asymmetrically substituted hafnium CA were demonstrated by a CT angiography study in rabbits that revealed excellent signal contrast enhancement.

  10. Process for production of a metal hydride

    DOEpatents

    Allen, Nathan Tait; Butterick, III, Robert; Chin, Arthur Achhing; Millar, Dean Michael; Molzahn, David Craig

    2014-08-12

    A process for production of a metal hydride compound MH.sub.x, wherein x is one or two and M is an alkali metal, Be or Mg. The process comprises combining a compound of formula (R.sup.1O).sub.xM with aluminum, hydrogen and at least one metal selected from among titanium, zirconium, hafnium, niobium, vanadium, tantalum and iron to produce a compound of formula MH.sub.x. R.sup.1 is phenyl or phenyl substituted by at least one alkyl or alkoxy group. A mole ratio of aluminum to (R.sup.1O).sub.xM is from 0.1:1 to 1:1. The catalyst is present at a level of at least 200 ppm based on weight of aluminum.

  11. Method for the melting of metals

    DOEpatents

    White, Jack C.; Traut, Davis E.

    1992-01-01

    A method of quantitatively determining the molten pool configuration in melting of metals. The method includes the steps of introducing hafnium metal seeds into a molten metal pool at intervals to form ingots, neutron activating the ingots and determining the hafnium location by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

  12. Process for the manufacture of an attrition resistant sorbent used for gas desulfurization

    DOEpatents

    Venkataramani, Venkat S.; Ayala, Raul E.

    2003-09-16

    This process produces a sorbent for use in desulfurization of coal gas. A zinc titanate compound and a metal oxide are mixed by milling the compounds in an aqueous medium, the resulting mixture is dried and then calcined, crushed, sleved and formed into pellets for use in a moving-bed reactor. Metal oxides suitable for use as an additive in this process include: magnesium oxide, magnesium oxide plus molybdenum oxide, calcium oxide, yttrium oxide, hafnium oxide, zirconium oxide, cupric oxide, and tin oxide. The resulting sorbent has a percentage of the original zinc or titanium ions substituted for the oxide metal of the chosen additive.

  13. Hardness and Microstructure of Binary and Ternary Nitinol Compounds

    NASA Technical Reports Server (NTRS)

    Stanford, Malcolm K.

    2016-01-01

    The hardness and microstructure of twenty-six binary and ternary Nitinol (nickel titanium, nickel titanium hafnium, nickel titanium zirconium and nickel titanium tantalum) compounds were studied. A small (50g) ingot of each compound was produced by vacuum arc remelting. Each ingot was homogenized in vacuum for 48 hr followed by furnace cooling. Specimens from the ingots were then heat treated at 800, 900, 1000 or 1100 degree C for 2 hr followed by water quenching. The hardness and microstructure of each specimen was compared to the baseline material (55-Nitinol, 55 at.% nickel - 45 at.% titanium, after heat treatment at 900 degC). The results show that eleven of the studied compounds had higher hardness values than the baseline material. Moreover, twelve of the studied compounds had measured hardness values greater 600HV at heat treatments from 800 to 900 degree C.

  14. Effects of anode material on arcjet performance

    NASA Technical Reports Server (NTRS)

    Sankovic, John M.; Curran, Frank M.; Larson, C. A.

    1992-01-01

    Anodes fabricated from four different materials were tested in a modular arcjet thruster at 1 kW power level on nitrogen/hydrogen mixtures. A two-percent thoriated tungsten anode served as the control. Graphite was chosen for its ease in fabrication, but experienced severe erosion in the constrictor and diverging side. Hafnium carbide and lanthanum hexaboride were chosen for their low work functions but failed due to thermal stress and reacted with the propellant. When compared to the thoriated tungsten nozzle, thruster performance was significantly lower for the lanthanum hexaboride insert and the graphite nozzle, but was slightly higher for the hafnium carbide nozzle. Both the lanthanum hexaboride and hafnium carbide nozzle operated at higher voltages. An attempt was made to duplicate higher performance hafnium carbide results, but repeated attempts at machining a second anode insert were unsuccessful. Graphite, hafnium carbide, and lanthanum hexaboride do not appear viable anode materials for low power arcjet thrusters.

  15. Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou

    2015-11-23

    This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with themore » bias stability and thermal stability.« less

  16. Simultaneous determination of tantalum and hafnium in silicates by neutron activation analysis

    USGS Publications Warehouse

    Greenland, L.P.

    1968-01-01

    A neutron activation procedure suitable for the routine determination of tantalum and hafnium in silicates is described. The irradiated sample is fused with sodium peroxide and leached, and the insoluble hydroxides are dissolved in dilute hydrofluoric acid-hydrochloric acid. After LaF3 and AgCl scavenges, tantalum and hafnium are separated by anion exchange. Tantalum is obtained radiochemically pure; 233Pa and 95Zr contaminants in the hafnium fraction are resolved by ??-ray spectrometry. The chemical yield of the procedure is detemined after counting by re-irradiation. Values for the 8 U.S. Geological Survey standard rocks are reported. ?? 1968.

  17. Vibrational spectra of cyclopentadienyl chlorides of titanium, zirconium and hafnium. internal rotation and thermodynamic functions

    NASA Astrophysics Data System (ADS)

    Balducci, G.; Bencivenni, L.; De Rosa, G.; Gigli, R.; Martine, B.; Cesaro, S. Nunziante

    1980-05-01

    The infrared and Raman spectra of some cyclopentadienyl compounds of the transition metals, namely Ti(C 5H 5)Cl 3 and M(C 5H 5) 2Cl 2 (M = Ti, Zr and Hf), are reported and discussed. The infrared spectra of the gaseous species isolated in argon matrices at 10 K provide structural information about the single molecules. Particular attention has been paid to the low-frequency region in order to achieve more reliable assignments for the internal-rotation modes. The structural data and the fundamental frequencies derived from the spectra are employed in a calculation of the thermodynamic functions for these compounds in the ideal gas state.

  18. The interfacial orientation relationship of oxide nanoparticles in a hafnium-containing oxide dispersion-strengthened austenitic stainless steel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Miao, Yinbin, E-mail: miao2@illinois.edu; Mo, Kun; Cui, Bai

    2015-03-15

    This work reports comprehensive investigations on the orientation relationship of the oxide nanoparticles in a hafnium-containing austenitic oxide dispersion-strengthened 316 stainless steel. The phases of the oxide nanoparticles were determined by a combination of scanning transmission electron microscopy–electron dispersive X-ray spectroscopy, atom probe tomography and synchrotron X-ray diffraction to be complex Y–Ti–Hf–O compounds with similar crystal structures, including bixbyite Y{sub 2}O{sub 3}, fluorite Y{sub 2}O{sub 3}–HfO{sub 2} solid solution and pyrochlore (or fluorite) Y{sub 2}(Ti,Hf){sub 2−x}O{sub 7−x}. High resolution transmission electron microscopy was used to characterize the particle–matrix interfaces. Two different coherency relationships along with one axis-parallel relation between themore » oxide nanoparticles and the steel matrix were found. The size of the nanoparticles significantly influences the orientation relationship. The results provide insight into the relationship of these nanoparticles with the matrix, which has implications for interpreting material properties as well as responses to radiation. - Highlights: • The oxide nanoparticles in a hafnium-containing austenitic ODS were characterized. • The nanoparticles are Y–Hf–Ti–O enriched phases according to APT and STEM–EDS. • Two coherency and an axis-parallel orientation relationships were found by HR-TEM. • Particle size has a prominent effect on the orientation relationship (OR). • Formation mechanism of the oxide nanoparticles was discussed based on the ORs.« less

  19. 40 CFR 471.91 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... million off-pounds) of zirconium-hafnium extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0... million off-pounds) of zirconium-hafnium heat treated Chromium 0.151 0.062 Cyanide 0.100 0.041 Nickel 0...-hafnium surface treated Chromium 0.150 0.61 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20...

  20. 40 CFR 471.91 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... million off-pounds) of zirconium-hafnium extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0... million off-pounds) of zirconium-hafnium heat treated Chromium 0.151 0.062 Cyanide 0.100 0.041 Nickel 0...-hafnium surface treated Chromium 0.150 0.61 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20...

  1. High P-T phase transitions and P-V-T equation of state of hafnium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hrubiak, Rostislav; Drozd, Vadym; Karbasi, Ali

    2016-07-29

    We measured the volume of hafnium at several pressures up to 67 GPa and at temperatures between 300 to 780 K using a resistively heated diamond anvil cell with synchrotron x-ray diffraction at the Advanced Photon Source. The measured data allows us to determine the P-V-T equation of state of hafnium. The previously described [Xia et al., Phys. Rev. B 42, 6736-6738 (1990)] phase transition from hcp ({alpha}) to simple hexagonal ({omega}) phase at 38 GPa at room temperature was not observed even up to 51 GPa. The {omega} phase was only observed at elevated temperatures. Our measurements have alsomore » improved the experimental constraint on the high P-T phase boundary between the {omega} phase and high pressure bcc ({beta}) phase of hafnium. Isothermal room temperature bulk modulus and its pressure derivative for the {alpha}-phase of hafnium were measured to be B{sub 0} = 112.9{+-}0.5 GPa and B{sub 0}'=3.29{+-}0.05, respectively. P-V-T data for the {alpha}-phase of hafnium was used to obtain a fit to a thermodynamic P-V-T equation of state based on model by Brosh et al. [CALPHAD 31, 173-185 (2007)].« less

  2. 40 CFR 471.94 - Pretreatment standards for existing sources (PSES).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...-hafnium extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14...-hafnium heat treated Chromium 0.015 0.006 Cyanide 0.010 0.004 Nickel 0.066 0.044 Ammonia 4.57 2.01...-hafnium surface treated Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20.0...

  3. 40 CFR 471.94 - Pretreatment standards for existing sources (PSES).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...-hafnium extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14...-hafnium heat treated Chromium 0.015 0.006 Cyanide 0.010 0.004 Nickel 0.066 0.044 Ammonia 4.57 2.01...-hafnium surface treated Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20.0...

  4. SEPARATING HAFNIUM FROM ZIRCONIUM

    DOEpatents

    Lister, B.A.J.; Duncan, J.F.

    1956-08-21

    A dilute aqueous solution of zirconyl chloride which is 1N to 2N in HCl is passed through a column of a cation exchange resin in acid form thereby absorbing both zirconium and associated hafnium impurity in the mesin. The cation exchange material with the absorbate is then eluted with aqueous sulfuric acid of a O.8N to 1.2N strength. The first portion of the eluate contains the zirconium substantially free of hafnium.

  5. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    PubMed

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  6. Tensile and stress-rupture behavior of hafnium carbide dispersed molybdenum and tungsten base alloy wires

    NASA Technical Reports Server (NTRS)

    Yun, Hee Mann; Titran, Robert H.

    1993-01-01

    The tensile strain rate sensitivity and the stress-rupture strength of Mo-base and W-base alloy wires, 380 microns in diameter, were determined over the temperature range from 1200 K to 1600 K. Three molybdenum alloy wires; Mo + 1.1w/o hafnium carbide (MoHfC), Mo + 25w/o W + 1.1w/o hafnium carbide (MoHfC+25W) and Mo + 45w/o W + 1.1w/o hafnium carbide (MoHfC+45W), and a W + 0.4w/o hafnium carbide (WHfC) tungsten alloy wire were evaluated. The tensile strength of all wires studied was found to have a positive strain rate sensitivity. The strain rate dependency increased with increasing temperature and is associated with grain broadening of the initial fibrous structures. The hafnium carbide dispersed W-base and Mo-base alloys have superior tensile and stress-rupture properties than those without HfC. On a density compensated basis the MoHfC wires exhibit superior tensile and stress-rupture strengths to the WHfC wires up to approximately 1400 K. Addition of tungsten in the Mo-alloy wires was found to increase the long-term stress rupture strength at temperatures above 1400 K. Theoretical calculations indicate that the strength and ductility advantage of the HfC dispersed alloy wires is due to the resistance to recrystallization imparted by the dispersoid.

  7. Effect of cathode cooling efficiency and oxygen plasma gas pressure on the hafnium cathode wall temperature

    NASA Astrophysics Data System (ADS)

    Ashtekar, Koustubh; Diehl, Gregory; Hamer, John

    2012-10-01

    The hafnium cathode is widely used in DC plasma arc cutting (PAC) under an oxygen gas environment to cut iron and iron alloys. The hafnium erosion is always a concern which is controlled by the surface temperature. In this study, the effect of cathode cooling efficiency and oxygen gas pressure on the hafnium surface temperature are quantified. The two layer cathode sheath model is applied on the refractive hafnium surface while oxygen species (O2, O, O+, O++, e-) are considered within the thermal dis-equilibrium regime. The system of non-linear equations comprising of current density balance, heat flux balance at both the cathode surface and the sheath-ionization layer is coupled with the plasma gas composition solver. Using cooling heat flux, gas pressure and current density as inputs; the cathode wall temperature, electron temperature, and sheath voltage drop are calculated. Additionally, contribution of emitted electron current (Je) and ions current (Ji) to the total current flux are estimated. Higher gas pressure usually reduces Ji and increases Je that reduces the surface temperature by thermionic cooling.

  8. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

    PubMed Central

    Borowicz, P.; Taube, A.; Rzodkiewicz, W.; Latek, M.; Gierałtowska, S.

    2013-01-01

    Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide. PMID:24072982

  9. Nuclear-grade zirconium prepared by combining combustion synthesis with molten-salt electrorefining technique

    NASA Astrophysics Data System (ADS)

    Li, Hui; Nersisyan, Hayk H.; Park, Kyung-Tae; Park, Sung-Bin; Kim, Jeong-Guk; Lee, Jeong-Min; Lee, Jong-Hyeon

    2011-06-01

    Zirconium has a low absorption cross-section for neutrons, which makes it an ideal material for use in nuclear reactor applications. However, hafnium typically contained in zirconium causes it to be far less useful for nuclear reactor materials because of its high neutron-absorbing properties. In the present study, a novel effective method has been developed for the production of hafnium-free zirconium. The process includes two main stages: magnesio-thermic reduction of ZrSiO 4 under a combustion mode, to produce zirconium silicide (ZrSi), and recovery of hafnium-free zirconium by molten-salt electrorefining. It was found that, depending on the electrorefining procedure, it is possible to produce zirconium powder with a low hafnium content: 70 ppm, determined by ICP-AES analysis.

  10. New rare earth hafnium oxynitride perovskites with photocatalytic activity in water oxidation and reduction.

    PubMed

    Black, Ashley P; Suzuki, Hajime; Higashi, Masanobu; Frontera, Carlos; Ritter, Clemens; De, Chandan; Sundaresan, A; Abe, Ryu; Fuertes, Amparo

    2018-02-06

    RHfO 2 N perovskites with R = La, Nd and Sm show a GdFeO 3 -type structure and are semiconductors with band gaps of 3.35, 3.40 and 2.85 eV and relative dielectric constants of 30, 16 and 28 respectively. These compounds have adequate reduction and oxidation potentials to conduct the overall water splitting reaction, and the analogous perovskite LaZrO 2 N with a band gap of 2.8 eV shows photocatalytic activity under visible light irradiation for O 2 evolution.

  11. Process for production of a borohydride compound

    DOEpatents

    Allen, Nathan Tait; Butterick, III, Robert; Chin, Arthur Achhing; Millar, Dean Michael; Molzahn, David Craig

    2014-08-19

    A process for production of a borohydride compound M(BH.sub.4).sub.y. The process has three steps. The first step combines a compound of formula (R.sup.1O).sub.yM with aluminum, hydrogen and a metallic catalyst containing at least one metal selected from the group consisting of titanium, zirconium, hafnium, niobium, vanadium, tantalum and iron to produce a compound of formula M(AlH.sub.3OR.sup.1).sub.y, wherein R.sup.1 is phenyl or phenyl substituted by at least one alkyl or alkoxy group; M is an alkali metal, Be or Mg; and y is one or two; wherein the catalyst is present at a level of at least 200 ppm based on weight of aluminum. The second step combines the compound of formula M(AlH.sub.3OR.sup.1).sub.y with a borate, boroxine or borazine compound to produce M(BH.sub.4).sub.y and a byproduct mixture containing alkali metal and aluminum aryloxides. The third step separates M(BH.sub.4).sub.y from the byproduct mixture.

  12. The Hot-Pressing of Hafnium Carbide (Melting Point, 7030 F)

    NASA Technical Reports Server (NTRS)

    Sanders, William A.; Grisaffe, Salvatore J.

    1960-01-01

    An investigation was undertaken to determine the effects of the hot-pressing variables (temperature, pressure, and time) on the density and grain size of hafnium carbide disks. The purpose was to provide information necessary for the production of high-density test shapes for the determination of physical and mechanical properties. Hot-pressing of -325 mesh hafnium carbide powder was accomplished with a hydraulic press and an inductively heated graphite die assembly. The ranges investigated for each variable were as follows: temperature, 3500 to 4870 F; pressure, 1000 to 6030 pounds per square inch; and time, 5 to 60 minutes. Hafnium carbide bodies of approximately 98 percent theoretical density can be produced under the following minimal conditions: 4230 F, 3500 pounds per square inch, and 15 minutes. Further increases in temperature and time resulted only in greater grain size.

  13. PROCESS OF RECOVERING ZIRCONIUM VALUES FROM HAFNIUM VALUES BY SOLVENT EXTRACTION WITH AN ALKYL PHOSPHATE

    DOEpatents

    Peppard, D.F.

    1960-02-01

    A process of separating hafnium nitrate from zirconium nitrate contained in a nitric acid solution by selectively. extracting the zirconium nitrate with a water-immiscible alkyl phosphate is reported.

  14. CVD aluminiding process for producing a modified platinum aluminide bond coat for improved high temperature performance

    NASA Technical Reports Server (NTRS)

    Nagaraj, Bangalore A. (Inventor); Williams, Jeffrey L. (Inventor)

    2003-01-01

    A method of depositing by chemical vapor deposition a modified platinum aluminide diffusion coating onto a superalloy substrate comprising the steps of applying a layer of a platinum group metal to the superalloy substrate; passing an externally generated aluminum halide gas through an internal gas generator which is integral with a retort, the internal gas generator generating a modified halide gas; and co-depositing aluminum and modifier onto the superalloy substrate. In one form, the modified halide gas is hafnium chloride and the modifier is hafnium with the modified platinum aluminum bond coat comprising a single phase additive layer of platinum aluminide with at least about 0.5 percent hafnium by weight percent and about 1 to about 15 weight percent of hafnium in the boundary between a diffusion layer and the additive layer. The bond coat produced by this method is also claimed.

  15. Method for fabricating hafnia films

    DOEpatents

    Hu, Michael Z [Knoxville, TN

    2007-08-21

    The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution for a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.

  16. Hafnium silicate and hafnium silicon oxynitride gate dielectrics for strained Si_xGe_1-x: Interface stability

    NASA Astrophysics Data System (ADS)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    Strained Si_xGe_1-x layers have gained considerable attention due to hole mobility enhancement, and ease of integration with Si-based CMOS technology. The deposition of stable high-κ dielectrics [1] such as hafnium silicate and hafnium silicon oxynitride in direct contact with SiGe would simultaneously improve the capacitance of the gate stack and lower the leakage current for high performance SiGe devices. However, the oxidation of the Si_xGe_1-x substrate either during dielectric deposition or post-deposition processing would degrade device performance due to the thermodynamic instability of germanium oxide [2,3]. Results from XPS, HR-TEM, and C-V, and I-V analyses after various annealing treatments will be presented for hafnium silicate and hafnium silicon oxynitride films deposited on strained Si_xGe_1-x(100), and correlated with dielectric-Si_xGe_1-x(100) interface stability. Implications to the introduction of these oxides as viable gate dielectric candidates for SiGe-based CMOS technology will be discussed. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001) [2] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [3] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995)

  17. Composition and method for brazing graphite to graphite

    DOEpatents

    Taylor, Albert J.; Dykes, Norman L.

    1984-01-01

    The present invention is directed to a brazing material for joining graphite structures that can be used at temperatures up to about 2800.degree. C. The brazing material formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600.degree. C. with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800.degree. C. so as to provide a brazed joint consisting essentially of hafnium carbide. This brazing temperature for hafnium carbide is considerably less than the eutectic temperature of hafnium carbide of about 3150.degree. C. The brazing composition also incorporates the thermosetting resin so that during the brazing operation the graphite structures may be temporarily bonded together by thermosetting the resin so that machining of the structures to final dimensions may be completed prior to the completion of the brazing operation. The resulting brazed joint is chemically and thermally compatible with the graphite structures joined thereby and also provides a joint of sufficient integrity so as to at least correspond with the strength and other properties of the graphite.

  18. Transition metal complexes supported on metal-organic frameworks for heterogeneous catalysts

    DOEpatents

    Farha, Omar K.; Hupp, Joseph T.; Delferro, Massimiliano; Klet, Rachel C.

    2017-02-07

    A robust mesoporous metal-organic framework comprising a hafnium-based metal-organic framework and a single-site zirconium-benzyl species is provided. The hafnium, zirconium-benzyl metal-organic framework is useful as a catalyst for the polymerization of an alkene.

  19. Thermochemistry of amorphous and crystalline zirconium and hafnium silicates.

    NASA Astrophysics Data System (ADS)

    Ushakov, S.; Brown, C. E.; Navrotsky, Alexandra; Boatner, L. A.; Demkov, A. A.; Wang, C.; Nguyen, B.-Y.

    2003-03-01

    Calorimetric investigation of amorphous and crystalline zirconium and hafnium silicates was performed as part of a research program on thermochemistry of alternative gate dielectrics. Amorphous hafnium and zirconium silicates with varying SiO2 content were synthesized by a sol-gel process. Crystalline zirconium and hafnium silicates (zircon and hafnon) were synthesized by solid state reaction at 1450 °C from amorphous gels and grown as single crystals from flux. High temperature oxide melt solution calorimetry in lead borate (2PbO.B2O3) solvent at 800 oC was used to measure drop solution enthalpies for amorphous and crystalline zirconium and hafnium silicates and corresponding oxides. Applying appropriate thermochemical cycles, formation enthalpy of crystalline ZrSiO4 (zircon) from binary oxides (baddeleite and quartz) at 298 K was calculated as -23 +/-2 kJ/mol and enthalpy difference between amorphous and crystalline zirconium silicate (vitrification enthalpy) was found to be 61 +/-3 kJ/mol. Crystallization onset temperatures of amorphous zirconium and hafnium silicates, as measured by differential scanning calorimetry (DSC), increased with silica content. The resulting crystalline phases, as characterized by X-ray diffraction (XRD), were tetragonal HfO2 and ZrO2. Critical crystallite size for tetragonal to monoclinic transformation of HfO2 in the gel was estimated as 6 +/-2 nm from XRD data Crystallization enthalpies per mole of hafnia and zirconia in gels decrease slightly together with crystallite size with increasing silica content, for example from -22 to -15 +/-1 kJ per mol of HfO2 crystallized at 740 and 1006 °C from silicates with 10 and 70 mol Applications of thermal analyses and solution calorimetry techniques together with first-principles density functional calculations to estimate interface and surface energies are discussed.

  20. Grindability of cast Ti-Hf alloys.

    PubMed

    Kikuchi, Masafumi; Takahashi, Masatoshi; Sato, Hideki; Okuno, Osamu; Nunn, Martha E; Okabe, Toru

    2006-04-01

    As part of our systematic studies characterizing the properties of titanium alloys, we investigated the grindability of a series of cast Ti-Hf alloys. Alloy buttons with hafnium concentrations up to 40 mass% were made using an argon-arc melting furnace. Each button was cast into a magnesia-based mold using a dental titanium casting machine; three specimens were made for each metal. Prior to testing, the hardened surface layer was removed. The specimens were ground at five different speeds for 1 min at 0.98 N using a carborundum wheel on an electric dental handpiece. Grindability was evaluated as the volume of metal removed per minute (grinding rate) and the volume ratio of metal removed compared to the wheel material lost (grinding ratio). The data were analyzed using ANOVA. A trend of increasing grindability was found with increasing amounts of hafnium, although there was no statistical difference in the grindability with increasing hafnium contents. We also found that hafnium may be used to harden or strengthen titanium without deteriorating the grindability.

  1. RF sputtered silicon and hafnium nitrides as applied to 440C steel

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1984-01-01

    Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

  2. Hafnium transistor process design for neural interfacing.

    PubMed

    Parent, David W; Basham, Eric J

    2009-01-01

    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  3. Effects of alloy composition in alleviating embrittlement problems associated with the tantalum alloy T-111

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.

    1975-01-01

    The causes of aging embrittlement in T-111 (Ta-8W-2Hf) and the effect of alloy modification were investigated. Results show that T-111 possesses a critical combination of tungsten and hafnium that leads to loss in ductility at -196 C after aging near 1040 C. It was found that this occurs because tungsten enhances hafnium segregation to grain boundaries, which also leads to increased susceptibility to hydrogen embrittlement. Aging embrittlement was not observed in tantalum alloys with reduced tungsten or hafnium contents; most of the alloys studied have lower strengths than T-111 and exhibit susceptibility to hydrogen embrittlement.

  4. "Decarbonization" of an imino N-heterocyclic carbene via triple benzyl migration from hafnium

    USDA-ARS?s Scientific Manuscript database

    An imino N-heterocyclic carbene underwent three sequential benzyl migrations upon reaction with tetrabenzylhafnium, resulting in complete removal of the carbene carbon from the ligand. The resulting eneamido-amidinato hafnium complex showed alkene polymerization activity comparable to that of a prec...

  5. Mineral resource of the month: zirconium and hafnium

    USGS Publications Warehouse

    Gambogi, Joseph

    2007-01-01

    Zirconium and hafnium are corrosion-resistant metals that are grouped in the same family as titanium on the periodic table. The two elements commonly occur in oxide and silicate minerals and have significant economic importance in everything from ink, ceramics and golf shoes to nuclear fuel rods.

  6. Interfacial phenomena in high-kappa dielectrics

    NASA Astrophysics Data System (ADS)

    Mathew, Anoop

    The introduction of novel high-kappa dielectric materials to replace the traditional SiO2 insulating layer in CMOS transistors is a watershed event in the history of transistor development. Further, replacement of the traditional highly-doped polycrystalline silicon gate electrode with a new set of materials for metal gates complicates the transition and introduces further integration challenges. A whole variety of new material surfaces and interfaces are thus introduced that merit close investigation to determine parameters for optimal device performance. Nitrogen is a key component that improves the performance of a variety of materials for the next generation of these CMOS transistors. Nitrogen is introduced into new gate dielectric materials such as hafnium silicates as well as in potential metal gate materials such as hafnium nitride. A photoemission study of the binding energies of the various atoms in these systems using photoemission reveals the nature of the atomic bonding. The current study compares hafnium silicates of various compositions which were thermally nitrided at different temperatures in ammonia, hafnium nitrides, and thin HfO2 films using photoelectron spectroscopy. A recurring theme that is explored is the competition between oxygen and nitrogen atoms in bonding with hafnium and other atoms. The N 1s photoemission peak is seen to have contributions from its bonding with hafnium, oxygen, and silicon atoms. The Hf 4f and O 1s spectra similarly exhibit signatures of their bonding environment with their neighboring atoms. Angle resolved photoemission and in-situ annealing/argon sputtering experiments are used to elucidate the nature of the bonding and its evolution with processing. A nondestructive profilitng of nitrogen distribution as a function of composition in nitrided hafnium silicates is also constructed using angle resolved photoemission as a function of the take-off angle. These results are corroborated with depth reconstruction obtained using medium energy ion scattering (MEIS). A comparison of samples nitrided at progressively increasing temperatures in an ammonia environment shows substitution of oxygen with nitrogen atoms and increasing penetration of nitrogen into the gate stack. Trends in the binding energy of the the as-prepared hafnium silicates suggest that they are non-phase separated, and the binding energy of the hafnium and silicon track the relative composition. Upon being subject to rapid thermal annealing, the samples are observed to show behavior consistent with phase separation. There is also the evidence of charges at the oxide/Si interface that modify the expected behavior of the shifts in binding energy. In another set of experiments, a one-cycle atomic layer deposition (ALD) growth reaction on the water terminated Si(100) -- (2x1) surface is shown to lead to successful nucleation, high metal oxide coverage, and an abrupt metal-oxide/silicon interface as confirmed by photoemission, reflection high energy electron diffraction (RHEED), and Rutherford back scattering (RBS) measurements. Photoemission results confirm the coordination states of the hafnium and oxygen atoms. A Hf 4f core level shift is observed and assigned to the presence of the Si-O-Hf bonding environment with the more electronegative Si atom inducing the binding energy shift. This Hf 4f shift is smaller than that reported previously for silicates because of the difference of the semiconductor bonding environment. The subspecies *(O)2HfCl2 and *OHfCl3 are seen to be the predominant intermediate species in these reactions and photoemission results provide corroborative evidence for their presence. Experiments indicate that the hydroxyl sites bound to Si(100) are active for adsorption. The abrupt interface could be useful for aggressive Effective Oxide Thickness (EOT) scaling.

  7. Multilayer article having stabilized zirconia outer layer and chemical barrier layer

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P. (Inventor); Lee, Kang N. (Inventor)

    2004-01-01

    A multilayer article includes a substrate that includes at least one of a ceramic compound and a Si-containing metal alloy. An outer layer includes stabilized zirconia. Intermediate layers are located between the outer layer and the substrate and include a mullite-containing layer and a chemical barrier layer. The mullite-containing layer includes 1) mullite or 2) mullite and an alkaline earth metal aluminosilicate. The chemical barrier layer is located between the mullite-containing layer and the outer layer. The chemical barrier layer includes at least one of mullite, hafnia, hafnium silicate and rare earth silicate (e.g., at least one of RE.sub.2 SiO.sub.5 and RE.sub.2 Si.sub.2 O.sub.7 where RE is Sc or Yb). The multilayer article is characterized by the combination of the chemical barrier layer and by its lack of a layer consisting essentially of barium strontium aluminosilicate between the mullite-containing layer and the chemical barrier layer. Such a barium strontium aluminosilicate layer may undesirably lead to the formation of a low melting glass or unnecessarily increase the layer thickness with concomitant reduced durability of the multilayer article. In particular, the chemical barrier layer may include at least one of hafnia, hafnium silicate and rare earth silicate.

  8. Composition and method for brazing graphite to graphite

    DOEpatents

    Taylor, A.J.; Dykes, N.L.

    1982-08-10

    A brazing material is described for joining graphite structures that can be used up to 2800/sup 0/C. The brazing material is formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600/sup 0/C with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800/sup 0/C so as to provide a brazed joint consisting essentially of hafnium carbide. The resulting brazed joint is chemically and thermally compatible with the graphite structures.

  9. Radioisotopic heat source

    DOEpatents

    Jones, G.J.; Selle, J.E.; Teaney, P.E.

    1975-09-30

    Disclosed is a radioisotopic heat source and method for a long life electrical generator. The source includes plutonium dioxide shards and yttrium or hafnium in a container of tantalum-tungsten-hafnium alloy, all being in a nickel alloy outer container, and subjected to heat treatment of from about 1570$sup 0$F to about 1720$sup 0$F for about one h. (auth)

  10. Silver-hafnium braze alloy

    DOEpatents

    Stephens, Jr., John J.; Hosking, F. Michael; Yost, Frederick G.

    2003-12-16

    A binary allow braze composition has been prepared and used in a bonded article of ceramic-ceramic and ceramic-metal materials. The braze composition comprises greater than approximately 95 wt % silver, greater than approximately 2 wt % hafnium and less than approximately 4.1 wt % hafnium, and less than approximately 0.2 wt % trace elements. The binary braze alloy is used to join a ceramic material to another ceramic material or a ceramic material, such as alumina, quartz, aluminum nitride, silicon nitride, silicon carbide, and mullite, to a metal material, such as iron-based metals, cobalt-based metals, nickel-based metals, molybdenum-based metals, tungsten-based metals, niobium-based metals, and tantalum-based metals. A hermetic bonded article is obtained with a strength greater than 10,000 psi.

  11. Methods of repairing a substrate

    NASA Technical Reports Server (NTRS)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2011-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  12. Zirconium and hafnium

    USGS Publications Warehouse

    Jones, James V.; Piatak, Nadine M.; Bedinger, George M.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Zirconium and hafnium are corrosion-resistant metals that are widely used in the chemical and nuclear industries. Most zirconium is consumed in the form of the main ore mineral zircon (ZrSiO4, or as zirconium oxide or other zirconium chemicals. Zirconium and hafnium are both refractory lithophile elements that have nearly identical charge, ionic radii, and ionic potentials. As a result, their geochemical behavior is generally similar. Both elements are classified as incompatible because they have physical and crystallochemical properties that exclude them from the crystal lattices of most rock-forming minerals. Zircon and another, less common, ore mineral, baddeleyite (ZrO2), form primarily as accessory minerals in igneous rocks. The presence and abundance of these ore minerals in igneous rocks are largely controlled by the element concentrations in the magma source and by the processes of melt generation and evolution. The world’s largest primary deposits of zirconium and hafnium are associated with alkaline igneous rocks, and, in one locality on the Kola Peninsula of Murmanskaya Oblast, Russia, baddeleyite is recovered as a byproduct of apatite and magnetite mining. Otherwise, there are few primary igneous deposits of zirconium- and hafnium-bearing minerals with economic value at present. The main ore deposits worldwide are heavy-mineral sands produced by the weathering and erosion of preexisting rocks and the concentration of zircon and other economically important heavy minerals, such as ilmenite and rutile (for titanium), chromite (for chromium), and monazite (for rare-earth elements) in sedimentary systems, particularly in coastal environments. In coastal deposits, heavy-mineral enrichment occurs where sediment is repeatedly reworked by wind, waves, currents, and tidal processes. The resulting heavy-mineral-sand deposits, called placers or paleoplacers, preferentially form at relatively low latitudes on passive continental margins and supply 100 percent of the world’s zircon. Zircon makes up a relatively small percentage of the economic heavy minerals in most deposits and is produced primarily as a byproduct of heavy-mineral-sand mining for titanium minerals.From 2003 to 2012, world zirconium mineral concentrates production increased by more than 40 percent, and Australia and South Africa were the leading producers. Global consumption of zirconium mineral concentrates generally increased during the same time period, largely as a result of increased demand in developing economies in Asia and the Middle East. Global demand weakened in 2012, causing a decrease in world production of zirconium mineral concentrates and delaying the development of several new mining projects. Global consumption is expected to increase in the future, however, as demand from the ceramics, chemicals, and metals industries increases (driven by renewed growth in developing economies) and demand for zirconium and hafnium metal increases (driven by the construction and operation of new nuclear powerplants).The behaviors of zirconium and hafnium in the environment are very similar to one another in that most zirconium- and hafnium-bearing minerals have limited solubility and reactivity. Anthropogenic sources of zirconium, and likely hafnium, are from industrial zirconium-containing byproducts and emissions from the processing of sponge zirconium, and exposure to the general population from these sources is small. Zirconium and hafnium are likely not essential to human health and generally are considered to be of low toxicity to humans. The main exposure risks are associated with industrial inhalation and dermal exposure. Because of the low solubility of zirconium and hafnium, ecological health concerns in the aquatic environment and in soils are minimal. Heavy-mineral-sand mining may lead to increased erosion rates when the mining is managed improperly. In addition, surface mining requires removal of the overlying organic soil layer and produces waste material that includes tailings and slimes. The soil removal and mining activity disturbs the surrounding ecosystem and alters the character of the landscape. Dry mineral separation processes create high amounts of airborne dust, whereas wet mineral separation processes do not. In operations that restore the landscape to pre-mining conditions, the volume of waste and the impact on the landscape may be relatively temporary.

  13. Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Starschich, S.; Böttger, U.; Menzel, S.

    The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of −160 °C to 100 °C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution ofmore » oxygen vacancies is the origin of the wake-up effect.« less

  14. The performance of hafnium and gadolinium self powered neutron detectors in the TREAT reactor

    NASA Astrophysics Data System (ADS)

    Imel, G. R.; Hart, P. R.

    1996-05-01

    The use of gadolinium and hafnium self powered neutron detectors in a transient reactor is described in this paper. The detectors were calibrated to the fission rate of U-235 using calibrated fission chambers; the calibration factors were tested in two reactors in steady state and found to be consistent. Calibration of the detectors in transient reactor conditions was done by using uranium wires that were analyzed by radiochemistry techniques to determine total fissions during the transient. This was correlated to the time-integrated current of the detectors during the transient. A temperature correction factor was derived to account for self-shielding effects in the hafnium and gadolinium detectors. The dynamic response of the detectors under transient conditions was studied, and found to be excellent.

  15. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    NASA Astrophysics Data System (ADS)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources. The second objective of this study is to develop new rinse methods to reduce water and energy usage during rinsing and cleaning of hafnium based high-κ materials in single wafer-cleaning tools. It is necessary to have a metrology method which can study the effect of all process parameters that affect the rinsing by knowing surface concentration of contaminants in patterned hafnium based oxides and silicate wafers. This has been achieved by the introduction of a metrology method at The University of Arizona which monitors the transport of contaminant concentrations inside micro- and nano- structures. This is the only metrology which will be able to provide surface concentration of contaminants inside hafnium based oxides and silicate micro-structures while the rinsing process is taking place. The goal of this research is to study the effect of various process parameters on rinsing of patterned hafnium based oxides and silicate wafers, and modify a metrology method for end point detection.

  16. Article having an improved platinum-aluminum-hafnium protective coating

    NASA Technical Reports Server (NTRS)

    Nagaraj, Bangalore Aswatha (Inventor); Williams, Jeffrey Lawrence (Inventor)

    2005-01-01

    An article protected by a protective coating has a substrate and a protective coating having an outer layer deposited upon the substrate surface and a diffusion zone formed by interdiffusion of the outer layer and the substrate. The protective coating includes platinum, aluminum, no more than about 2 weight percent hafnium, and substantially no silicon. The outer layer is substantially a single phase.

  17. 40 CFR 471.93 - New source performance standards (NSPS).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium extruded Chromium 0.104 0... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium heat treated Chromium 0.015... Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20.0 Fluoride 20.0 8.98 Oil and...

  18. 40 CFR 471.93 - New source performance standards (NSPS).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium extruded Chromium 0.104 0... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium heat treated Chromium 0.015... Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20.0 Fluoride 20.0 8.98 Oil and...

  19. Hafnium-Based Bulk Metallic Glasses for Kinetic Energy Penetrators

    DTIC Science & Technology

    2004-12-01

    uranium -based (DU) and tungsten- nickel -iron (W-Ni-Fe) composite kinetic energy (KE) munitions is primarily ascribed to their high densities (U: ρ...based on an invariant point identified in the hafnium- copper- nickel ternary system. They are denser than zirconium-based glass-forming compositions...depleted- uranium penetrators. 1. INTRODUCTION 1.1 Criterion for Effective Kinetic Energy Penetrator Performance The lethality of depleted

  20. Precipitation hardening austenitic superalloys

    DOEpatents

    Korenko, Michael K.

    1985-01-01

    Precipitation hardening, austenitic type superalloys are described. These alloys contain 0.5 to 1.5 weight percent silicon in combination with about 0.05 to 0.5 weight percent of a post irradiation ductility enhancing agent selected from the group of hafnium, yttrium, lanthanum and scandium, alone or in combination with each other. In addition, when hafnium or yttrium are selected, reductions in irradiation induced swelling have been noted.

  1. Composite catalyst for carbon monoxide and hydrocarbon oxidation

    DOEpatents

    Liu, W.; Flytzani-Stephanopoulos, M.

    1996-03-19

    A method and composition are disclosed for the complete oxidation of carbon monoxide and/or hydrocarbon compounds. The method involves reacting the carbon monoxide and/or hydrocarbons with an oxidizing agent in the presence of a metal oxide composite catalyst. The catalyst is prepared by combining fluorite-type oxygen ion conductors with active transition metals. The fluorite oxide, selected from the group consisting of cerium oxide, zirconium oxide, thorium oxide, hafnium oxide, and uranium oxide, and may be doped by alkaline earth and rare earth oxides. The transition metals, selected from the group consisting of molybdenum, copper, cobalt, manganese, nickel, and silver, are used as additives. The atomic ratio of transition metal to fluorite oxide is less than one.

  2. Composite catalyst for carbon monoxide and hydrocarbon oxidation

    DOEpatents

    Liu, Wei; Flytzani-Stephanopoulos, Maria

    1996-01-01

    A method and composition for the complete oxidation of carbon monoxide and/or hydrocarbon compounds. The method involves reacting the carbon monoxide and/or hydrocarbons with an oxidizing agent in the presence of a metal oxide composite catalyst. The catalyst is prepared by combining fluorite-type oxygen ion conductors with active transition metals. The fluorite oxide, selected from the group consisting of cerium oxide, zirconium oxide, thorium oxide, hafnium oxide, and uranium oxide, and may be doped by alkaline earth and rare earth oxides. The transition metals, selected from the group consisting of molybdnum, copper, cobalt, maganese, nickel, and silver, are used as additives. The atomic ratio of transition metal to fluorite oxide is less than one.

  3. Inter-diffusion of copper and hafnium as studied by x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Pearson, Justin; Chourasia, A. R.

    The Cu/Hf interface has been characterized by x-ray photoelectron spectroscopy. Thin films (thicknesses ranging from 100 nm to 150 nm) of hafnium were deposited on a silicon substrate. About 80 nm of copper was then deposited on such samples. The e-beam method was used for the deposition. The samples were annealed for 30 min at temperatures of 100, 200, 300, 400, and 500°C. The inter-diffusion of copper and hafnium was investigated by sequential sputter depth profiling and x-ray photoelectron spectroscopy. The interdiffusion in each case was analyzed by the Matano-Boltzmann's procedure using the Fick's second law. The interdiffusion coefficients and the width of the interface as determined from the data have been correlated with the annealing temperature. Supported by Organized Research, TAMU-Commerce.

  4. Synthesis of transparent nanocomposite monoliths for gamma scintillation

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Hajagos, Tibor J.; Kishpaugh, David; Jin, Yunxia; Hu, Wei; Chen, Qi; Pei, Qibing

    2015-08-01

    During the past decade, inorganic nanoparticles/polymer nanocomposites have been intensively studied to provide a low cost, high performance alternative for gamma scintillation. However, the aggregation of nanoparticles often occurs even at low nanoparticle concentrations and thus deteriorates the transparency and performance of these nanocomposite scintillators. Here we report an efficient fabrication protocol of transparent nanocomposite monoliths based on surface modified hafnium oxide nanoparticles. Using hafnium oxide nanoparticles with surface-grafted methacrylate groups, highly transparent bulk-size nanocomposite monoliths (2 mm thick, transmittance at 550 nm >75%) are fabricated with nanoparticle loadings up to 40 wt% (net hafnium wt% up to 28.5%). These nanocomposite monoliths of 1 cm diameter and 2 mm thickness are capable of producing a full energy photopeak for 662 keV gamma rays, with the best deconvoluted photopeak energy resolution reaching 8%.

  5. Ternary boride product and process

    NASA Technical Reports Server (NTRS)

    Clougherty, Edward V. (Inventor)

    1976-01-01

    A hard, tough, strong ceramic body is formed by hot pressing a mixture of a powdered metal and a powdered metal diboride. The metal employed is zirconium, titanium or hafnium and the diboride is the diboride of a different member of the same group of zirconium, titanium or hafnium to form a ternary composition. During hot pressing at temperatures above about 2,000.degree.F., a substantial proportion of acicular ternary monoboride is formed.

  6. Investigation of gamma radiation induced changes in local structure of borosilicate glass by TDPAC and EXAFS

    NASA Astrophysics Data System (ADS)

    Kumar, Ashwani; Nayak, C.; Rajput, P.; Mishra, R. K.; Bhattacharyya, D.; Kaushik, C. P.; Tomar, B. S.

    2016-12-01

    Gamma radiation induced changes in local structure around the probe atom (Hafnium) were investigated in sodium barium borosilicate (NBS) glass, used for immobilization of high level liquid waste generated from the reprocessing plant at Trombay, Mumbai. The (NBS) glass was doped with 181Hf as a probe for time differential perturbed angular correlation (TDPAC) spectroscopy studies, while for studies using extended X-ray absorption fine structure (EXAFS) spectroscopy, the same was doped with 0.5 and 2 % (mole %) hafnium oxide. The irradiated as well as un-irradiated glass samples were studied by TDPAC and EXAFS techniques to obtain information about the changes (if any) around the probe atom due to gamma irradiation. TDPAC spectra of unirradiated and irradiated glasses were similar and reminescent of amorphous materials, indicating negligible effect of gamma radiation on the microstructure around Hafnium probe atom, though the quaqdrupole interaction frequency ( ω Q) and asymmetry parameter ( η) did show a marginal decrease in the irradiated glass compared to that in the unirradiated glass. EXAFS measurements showed a slight decrease in the Hf-O bond distance upon gamma irradiation of Hf doped NBS glass indicating densification of the glass matrix, while the cordination number around hafnium remains unchanged.

  7. Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

    NASA Astrophysics Data System (ADS)

    Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos

    2004-09-01

    In this work thin films of hafnium oxide are deposited on Si(100) substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of 250-350ºC. Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with A˚ scale resolution, and spectroscopic ellipsometry. The observed ALD rate is ~1.4 A˚ per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the HfO2 growth is investigated in detail.

  8. Zirconium and hafnium in the southeastern Atlantic States

    USGS Publications Warehouse

    Mertie, J.B.

    1958-01-01

    The principal source of zirconium and hafnium is zircon, though a minor source is baddeleyite, mined only in Brazil. Zircon is an accessory mineral in igneous, metamorphic, and sedimentary rocks, but rarely occurs in hardrock in minable quantities. The principal sources of zircon are therefore alluvial deposits, which are mined in many countries of five continents. The principal commercial deposits in the United States are in Florida, though others exist elsewhere in the southeastern Coastal Plain. The evidence indicates that conditions for the accumulation of workable deposits of heavy minerals were more favorable during the interglacial stages of the Pleistocene epoch than during Recent time. Therefore detrital ores of large volume and high tenor are more likely to be found in the terrace deposits than along the present beaches. Other concentrations of heavy minerals, however, are possible at favored sites close to the Fall Line where the Tuscaloosa formation rests upon the crystalline rocks of the Piedmont province. A score of heavy and semiheavy minerals occur in the detrital deposits of Florida, but the principal salable minerals are ilmenite, leucoxene, rutile, and zircon, though monazite and staurolite are saved at some mining plants. Commercial deposits of heavy minerals are generally required to have a tenor of 4 percent, though ores with a lower tenor can be mined at a profit if the content of monazite is notably high. The percentages of zircon in the concentrates ranges from 10 to 16 percent, and in eastern Florida from 13 to 15 percent. Thus the tenor in zircon of the ore-bearing sands ranges from 0.4 to 0.6 percent. The content of hafnium in zircon is immaterial for many uses, but for some purposes very high or very low tenors in hafnium are required. Alluvial zircon cannot be separated into such varieties, which, if needed, must be obtained from sources in bedrock. It thus becomes necessary to determine the Hf : Zr ratios in zircon from many kinds of bedrock.Granitic rocks are the principal sources of zircon, though not the best sources of zircon with a high tenor in hafnium. A general study by the Geological Survey of the granitic rocks of the Southeastern Atlantic States has been in progress for 10 years, and hundreds of samples of granitic accessory minerals have been acquired. Thirty samples of zircon from these collections were selected for spectrographic and X-ray determinations of their tenors in hafnium. Nine other samples of alluvial zircon were included, of which three are from Florida and six from foreign countries. No domestic zircon was discovered with very high or very low tenors in hafnium.The volume of zircon in the southeastern Coastal Plain is enormous, but most of it is not recoverable. The minable reserves of heavy minerals, however, are very large, and from these it is estimated conservatively that 10 million short tons of zircon can be obtained. The corresponding amounts of zirconium and hafnium, using the mean Hf:Zr ratio of the deposits in Florida, are 4,868,000 and 112,000 tons, respectively. These reserves could be delivered, if needed, at the rate of 100,000 tons a year.

  9. 40 CFR 471.95 - Pretreatment standards for new sources (PSNS).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14.1 6.26...-hafnium heat treated Chromium 0.015 0.006 Cyanide 0.010 0.004 Nickel 0.066 0.044 Ammonia 4.57 2.01...-hafnium surface treated Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20...

  10. 40 CFR 471.95 - Pretreatment standards for new sources (PSNS).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... extruded Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14.1 6.26...-hafnium heat treated Chromium 0.015 0.006 Cyanide 0.010 0.004 Nickel 0.066 0.044 Ammonia 4.57 2.01...-hafnium surface treated Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20...

  11. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  12. Studies of Ultra High Temperature Ceramic Composite Components: Synthesis and Characterization of HfOxCy and Si Oxidation in Atomic Oxygen Containing Environments

    DTIC Science & Technology

    2008-08-01

    Andrea Hafeman and Dr Scott Guelcher for the use of the SDT analysis software. I would like to thank my committee members: Dr Clare McCabe, Dr Sharon...76 4.2: Thermogravimetric curves obtained during oxidation of hafnium...77 4.3: The thermogravimetric curves for hafnia and hafnium oxycarbide (28 mTorr) oxidized at 600°C

  13. Review of anhydrous zirconium-hafnium separation techniques. Information circular/1984

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Skaggs, R.L.; Rogers, D.T.; Hunter, D.B.

    1983-12-01

    Sixteen nonaqueous techniques conceived to replace the current aqueous scheme for separating hafnium and zirconium tetrachlorides were reviewed and evaluated by the Bureau of Mines. The methods are divided into two classes: separation by fractional volatilization of the tetrachlorides, which takes advantage of the higher volatility of hafnium tetrachloride; and separation by chemical techniques, based on differences in chemical behavior of the two tetrachlorides. The criteria used to evaluate separation methods were temperature, pressure, separation factor per equilibrium stage, complexity, compatibility with existing technology, and potential for continuous operation. Three processes were selected as being most promising: (1) high-pressure distillation,more » (2) extractive distillation from a molten salt, and (3) preferential reduction of gaseous ZrCl4. Any of the proposed nonaqueous Hf-Zr separation schemes must be supplemented with additional purification to remove trace impurities.« less

  14. Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

    NASA Technical Reports Server (NTRS)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2009-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  15. Separation of Zirconium and Hafnium: A Review

    NASA Astrophysics Data System (ADS)

    Xu, L.; Xiao, Y.; van Sandwijk, A.; Xu, Q.; Yang, Y.

    Zirconium is an ideal material for nuclear reactors due to its low absorption cross-section for thermal neutrons, whereas the typically contained hafnium with strong neutron-absorption is very harmful for zirconium. This paper provides an overview of the processes for separating hafnium from zirconium. The separation processes are roughly classified into hydro- and pyrometallurgical routes. The current dominant zirconium production route involves pyrometallurgical ore cracking, multi-step hydrometallurgical liquid-liquid extraction for hafnium removal and the reduction of zirconium tetrachloride to the pure metal by the Kroll process. The lengthy hydrometallurgical Zr-Hf separation operations leads to high production cost, intensive labour and heavy environmental burden. Using a compact pyrometallurgical separation method can simplify the whole production flowsheet with a higher process efficiency. The known separation methods are discussed based on the following reaction features: redox characteristics, volatility, electrochemical properties and molten salt extraction. The commercially operating extractive distillation process is a significant advance in Zr-Hf separation technology but it suffers from high process maintenance cost. The recently developed new process based on molten salt-metal equilibrium for Zr-Hf separation shows a great potential for industrial application, which is compact for nuclear grade zirconium production starting from crude ore. In the present paper, the available separation technologies are compared. The advantages and disadvantages as well as future directions of research and development for nuclear grade zirconium production are discussed.

  16. Aminopyridinate-FI hybrids, their hafnium and titanium complexes, and their application in the living polymerization of 1-hexene.

    PubMed

    Haas, Isabelle; Dietel, Thomas; Press, Konstantin; Kol, Moshe; Kempe, Rhett

    2013-10-11

    Based on two well-established ligand systems, the aminopyridinato (Ap) and the phenoxyimine (FI) ligand systems, new Ap-FI hybrid ligands were developed. Four different Ap-FI hybrid ligands were synthesized through a simple condensation reaction and fully characterized. The reaction of hafnium tetrabenzyl with all four Ap-FI hybrid ligands exclusively led to mono(Ap-FI) complexes of the type [(Ap-FI)HfBn2 ]. The ligands acted as tetradentate dianionic chelates. Upon activation with tris(pentafluorophenyl)borane, the hafnium-dibenzyl complexes led to highly active catalysts for the polymerization of 1-hexene. Ultrahigh molecular weights and extremely narrow polydispersities support the living nature of this polymerization process. A possible deactivation product of the hafnium catalysts was characterized by single-crystal X-ray analysis and is discussed. The coordination modes of these new ligands were studied with the help of model titanium complexes. The reaction of titanium(IV) isopropoxide with ligand 1 led to a mono(Ap-FI) complex, which showed the desired fac-mer coordination mode. Titanium (IV) isopropoxide reacted with ligand 4 to give a complex of the type [(ApH-FI)2 Ti(OiPr)2 ], which featured the ligand in its monoanionic form. The two titanium complexes were characterized by X-ray crystal-structure analysis. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Tetra­kis(1,1,1-trifluoro­acetyl­acetonato-κ2 O,O′)hafnium(IV) toluene disolvate

    PubMed Central

    Viljoen, J. Augustinus; Muller, Alfred; Roodt, Andreas

    2008-01-01

    In the title compound, [Hf(C5H4F3O2)4]·2C7H8, the HfIV atom, lying on a twofold rotation axis, is coordinated by eight O atoms from four 1,1,1-trifluoro­acetyl­acetonate ligands with an average Hf—O distance of 2.173 (1) Å and O—Hf—O bite angles of 75.69 (5) and 75.54 (5)°. The coordination polyhedron shows a slightly distorted Archimedean square antiprismatic geometry. The asymmetric unit contains a toluene solvent mol­ecule. The crystal structure involves C—H⋯.F hydrogen bonds. PMID:21202519

  18. High Atomic Number Contrast Media Offer Potential for Radiation Dose Reduction in Contrast-Enhanced Computed Tomography.

    PubMed

    Roessler, Ann-Christin; Hupfer, Martin; Kolditz, Daniel; Jost, Gregor; Pietsch, Hubertus; Kalender, Willi A

    2016-04-01

    Spectral optimization of x-ray computed tomography (CT) has led to substantial radiation dose reduction in contrast-enhanced CT studies using standard iodinated contrast media. The purpose of this study was to analyze the potential for further dose reduction using high-atomic-number elements such as hafnium and tungsten. As in previous studies, spectra were determined for which the patient dose necessary to provide a given contrast-to-noise ratio (CNR) is minimized. We used 2 different quasi-anthropomorphic phantoms representing the liver cross-section of a normal adult and an obese adult patient with the lateral widths of 360 and 460 mm and anterior-posterior heights of 200 and 300 mm, respectively. We simulated and measured on 2 different scanners with x-ray spectra from 80 to 140 kV and from 70 to 150 kV, respectively. We determined the contrast for iodine-, hafnium-, and tungsten-based contrast media, the noise, and 3-dimensional dose distributions at all available tube voltages by measurements and by simulations. The dose-weighted CNR was determined as optimization parameter. Simulations and measurements were in good agreement regarding their dependence on energy for all parameters investigated. Hafnium provided the best performance for normal and for obese patient phantoms, indicating a dose reduction potential of 30% for normal and 50% for obese patients at 120 kV compared with iodine; this advantage increased further with higher kV values. Dose-weighted CNR values for tungsten were always slightly below the hafnium results. Iodine proved to be the superior choice at voltage values of 80 kV and below. Hafnium and tungsten both seem to be candidates for contrast-medium-enhanced CT of normal and obese adult patients with strongly reduced radiation dose at unimpaired image quality. Computed tomography examinations of obese patients will decrease in dose for higher kV values.

  19. Hafnium isotope evidence for a transition in the dynamics of continental growth 3.2 Gyr ago.

    PubMed

    Næraa, T; Scherstén, A; Rosing, M T; Kemp, A I S; Hoffmann, J E; Kokfelt, T F; Whitehouse, M J

    2012-05-30

    Earth's lithosphere probably experienced an evolution towards the modern plate tectonic regime, owing to secular changes in mantle temperature. Radiogenic isotope variations are interpreted as evidence for the declining rates of continental crustal growth over time, with some estimates suggesting that over 70% of the present continental crustal reservoir was extracted by the end of the Archaean eon. Patterns of crustal growth and reworking in rocks younger than three billion years (Gyr) are thought to reflect the assembly and break-up of supercontinents by Wilson cycle processes and mark an important change in lithosphere dynamics. In southern West Greenland numerous studies have, however, argued for subduction settings and crust growth by arc accretion back to 3.8 Gyr ago, suggesting that modern-day tectonic regimes operated during the formation of the earliest crustal rock record. Here we report in situ uranium-lead, hafnium and oxygen isotope data from zircons of basement rocks in southern West Greenland across the critical time period during which modern-like tectonic regimes could have initiated. Our data show pronounced differences in the hafnium isotope-time patterns across this interval, requiring changes in the characteristics of the magmatic protolith. The observations suggest that 3.9-3.5-Gyr-old rocks differentiated from a >3.9-Gyr-old source reservoir with a chondritic to slightly depleted hafnium isotope composition. In contrast, rocks formed after 3.2 Gyr ago register the first additions of juvenile depleted material (that is, new mantle-derived crust) since 3.9 Gyr ago, and are characterized by striking shifts in hafnium isotope ratios similar to those shown by Phanerozoic subduction-related orogens. These data suggest a transitional period 3.5-3.2 Gyr ago from an ancient (3.9-3.5 Gyr old) crustal evolutionary regime unlike that of modern plate tectonics to a geodynamic setting after 3.2 Gyr ago that involved juvenile crust generation by plate tectonic processes.

  20. Hybrid nuclear reactor grey rod to obtain required reactivity worth

    DOEpatents

    Miller, John V.; Carlson, William R.; Yarbrough, Michael B.

    1991-01-01

    Hybrid nuclear reactor grey rods are described, wherein geometric combinations of relatively weak neutron absorber materials such as stainless steel, zirconium or INCONEL, and relatively strong neutron absorber materials, such as hafnium, silver-indium cadmium and boron carbide, are used to obtain the reactivity worths required to reach zero boron change load follow. One embodiment includes a grey rod which has combinations of weak and strong neutron absorber pellets in a stainless steel cladding. The respective pellets can be of differing heights. A second embodiment includes a grey rod with a relatively thick stainless steel cladding receiving relatively strong neutron absorber pellets only. A third embodiment includes annular relatively weak netron absorber pellets with a smaller diameter pellet of relatively strong absorber material contained within the aperture of each relatively weak absorber pellet. The fourth embodiment includes pellets made of a homogeneous alloy of hafnium and a relatively weak absorber material, with the percentage of hafnium chosen to obtain the desired reactivity worth.

  1. Evaluation of T-111 forced-convection loop tested with lithium at 1370 C. [free convection

    NASA Technical Reports Server (NTRS)

    Devan, J. H.; Long, E. L., Jr.

    1975-01-01

    A T-111 alloy (Ta-8% W-2% Hf) forced-convection loop containing molten lithium was operated 3000 hr at a maximum temperature of 1370 C. Flow velocities up to 6.3 m/sec were used, and the results of this forced-convection loop are very similar to those observed in lower velocity thermal-convection loops of T-111 containing lithium. Weight changes were determined at 93 positions around the loop. The maximum dissolution rate occurred at the maximum wall temperature of the loop and was less than 1.3 microns/year. Mass transfer of hafnium, nitrogen, and, to a lesser extent, carbon occurred from the hotter to cooler regions. Exposed surfaces in the highest temperature region were found to be depleted in hafnium to a depth of 60 microns with no detectable change in tungsten content. There was some loss in room-temperature tensile strength for specimens exposed to lithium at 1370 C, attributable to depletion of hafnium and nitrogen and to attendant grain growth.

  2. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    PubMed

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  3. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rodenbücher, C.; Hildebrandt, E.; Sharath, S. U.

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films providesmore » a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.« less

  4. Experimental Observations of Nuclear Activity in Deuterated Materials Subjected to a Low-Energy Photon Beam

    NASA Technical Reports Server (NTRS)

    Steinetz, Bruce M.; Benyo, Theresa L.; Pines, Vladimir; Pines, Marianna; Forsley, Lawrence P.; Westmeyer, Paul A.; Chait, Arnon; Becks, Michael D.; Martin, Richard E.; Hendricks, Robert C.; hide

    2017-01-01

    Exposure of highly deuterated materials to a low-energy (nom. 2 MeV) photon beam resulted in nuclear activity of both the parent metals of hafnium and erbium and a witness material (molybdenum) mixed with the reactants. Gamma spectral analysis of all deuterated materials, ErD2.8+C36D74+Mo and HfD2+C36D74+Mo, showed that nuclear processes had occurred as shown by unique gamma signatures. For the deuterated erbium specimens, posttest gamma spectra showed evidence of radioisotopes of erbium ((163)Er and (171)Er) and of molybdenum ((99)Mo and (101)Mo) and by beta decay, technetium (99mTc and 101Tc). For the deuterated hafnium specimens, posttest gamma spectra showed evidence of radioisotopes of hafnium (180mHf and 181Hf) and molybdenum ((99)Mo and (101)Mo), and by beta decay, technetium ((99m)Tc and (101)Tc). In contrast, when either the hydrogenated or non-gas-loaded erbium or hafnium materials were exposed to the gamma flux, the gamma spectra revealed no new isotopes. Neutron activation materials showed evidence of thermal and epithermal neutrons. CR-39 solid-state nuclear track detectors showed evidence of fast neutrons with energies between 1.4 and 2.5 MeV and several instances of triple tracks, indicating (is) greater than 10 MeV neutrons. Further study is required to determine the mechanism causing the nuclear activity.

  5. Preparation of refractory cermet structures for lithium compatibility testing

    NASA Technical Reports Server (NTRS)

    Heestand, R. L.; Jones, R. A.; Wright, T. R.; Kizer, D. E.

    1973-01-01

    High-purity nitride and carbide cermets were synthesized for compatability testing in liquid lithium. A process was developed for the preparation of high-purity hafnium nitride powder, which was subsequently blended with tungsten powder or tantalum nitride and tungsten powders and fabricated into 3 in diameter billets by uniaxial hot pressing. Specimens were then cut from the billets for compatability testing. Similar processing techniques were applied to produce hafnium carbide and zirconium carbide cermets for use in the testing program. All billets produced were characterized with respect to chemistry, structure, density, and strength properties.

  6. Sol-gel-derived double-layered nanocrystal memory

    NASA Astrophysics Data System (ADS)

    Ko, Fu-Hsiang; You, Hsin-Chiang; Lei, Tan-Fu

    2006-12-01

    The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900°C for 1min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior Vth shifting because of the higher probability for trapping the charge carrier.

  7. Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

    2016-07-11

    The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

  8. As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert

    2012-06-27

    In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2more » kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.« less

  9. Hafnium transistor design for neural interfacing.

    PubMed

    Parent, David W; Basham, Eric J

    2008-01-01

    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  10. Metal-Organic Nanosheets Formed via Defect-Mediated Transformation of a Hafnium Metal-Organic Framework.

    PubMed

    Cliffe, Matthew J; Castillo-Martínez, Elizabeth; Wu, Yue; Lee, Jeongjae; Forse, Alexander C; Firth, Francesca C N; Moghadam, Peyman Z; Fairen-Jimenez, David; Gaultois, Michael W; Hill, Joshua A; Magdysyuk, Oxana V; Slater, Ben; Goodwin, Andrew L; Grey, Clare P

    2017-04-19

    We report a hafnium-containing MOF, hcp UiO-67(Hf), which is a ligand-deficient layered analogue of the face-centered cubic fcu UiO-67(Hf). hcp UiO-67 accommodates its lower ligand:metal ratio compared to fcu UiO-67 through a new structural mechanism: the formation of a condensed "double cluster" (Hf 12 O 8 (OH) 14 ), analogous to the condensation of coordination polyhedra in oxide frameworks. In oxide frameworks, variable stoichiometry can lead to more complex defect structures, e.g., crystallographic shear planes or modules with differing compositions, which can be the source of further chemical reactivity; likewise, the layered hcp UiO-67 can react further to reversibly form a two-dimensional metal-organic framework, hxl UiO-67. Both three-dimensional hcp UiO-67 and two-dimensional hxl UiO-67 can be delaminated to form metal-organic nanosheets. Delamination of hcp UiO-67 occurs through the cleavage of strong hafnium-carboxylate bonds and is effected under mild conditions, suggesting that defect-ordered MOFs could be a productive route to porous two-dimensional materials.

  11. Effect of nitrogen on tensile properties and structures of T-111 (tantalum, 8 percent tungsten, 2 percent hafnium) tubing

    NASA Technical Reports Server (NTRS)

    Buzzard, R. J.; Metroka, R. R.

    1973-01-01

    The effect of controlled nitrogen additions was evaluated on the mechanical properties of T-111 (Ta-8W-2Hf) fuel pin cladding material proposed for use in a lithium-cooled nuclear reactor concept. Additions of 80 to 1125 ppm nitrogen resulted in increased strengthening of T-111 tubular section test specimens at temperatures of 25 to 1200 C. Homogeneous distributions of up to 500 ppm nitrogen did not seriously decrease tensile ductility. Both single and two-phase microstructures, with hafnium nitride as the second phase, were evaluated in this study.

  12. Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aguirre, B.; Vemuri, R. S.; Zubia, David

    2011-01-01

    Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO₂ ceramic target has been employed for sputtering while varying the Ts from room temperature to 500⁰C during deposition. The effect of Ts on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition ofmore » the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at Ts<200 ⁰C are amorphous while films grown at Ts>200 ⁰C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ⁰C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO₂ films. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at Ts>200 ⁰C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO₂-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.« less

  13. A STUDY OF THE STABILITY OF ZIRCONIUM AND HAFNIUM TETRAHALIDES ON HITTING A HOT SURFACE IN VACUUM (in Russian)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tsirel'nikov, V.I.; Komissarova, L.N.; Spitsyn, V.I.

    1962-09-01

    The decomposition coefficients of the chlorides, bromides, and iodides of Zr and Hf were determined as a function of the temperature of a hot surface. The tetrahalides were carefully purified in an inert atmosphere of argon. The halide compound in a quartz ampoule was heated by a removable heater. The vapors passed through a capillary opening and struck a tungsten foil 0.5 mm thick and 12 to 15 mm wide. The Mo foil was heated electrically to control the surface temperature which was measured by an optical pyrometer. The tetrahalide decomposed according to the following reaction: Me(Hal)/sub 4/ yields Memore » + 2(Hal)/sub 2/. The lower halides dissociated completely to metal and free halides, since the temperature was >600 deg C. The Mo backing was dissolved in nitric acid, and the unsupported metal deposit of Zr or Hf was weighed, The decomposition coefficient was calcuweight of metal evaporated. Zrl/sub 4/ decomposed completely (100%) at 1500 deg C, while only 96% of the HfI/sub 4/ was decomposed at this temperature. The ZrBr/sub 4/ and HfBr/sub 4/ were decomposed by 68 and 61% respectively. The ZrCl/sub 4/ and HfCl/sub 4/ were stable at l500 deg C (5% of the ZrCl/sub 4/ was decomposed at l500 deg C). In all cases, the hafnium halide was more stable than the zirconium halide, especially in the case of the iodides. The decomposition was directly proportional to the temperature of the molybdenum target. (TTT)« less

  14. Slow DNA Transport through Nanopores in Hafnium Oxide Membranes

    PubMed Central

    Bell, David C.; Cohen-Karni, Tzahi; Rosenstein, Jacob K.; Wanunu, Meni

    2016-01-01

    We present a study of double- and single-stranded DNA transport through nanopores fabricated in ultrathin (2–7 nm thick) free-standing hafnium oxide (HfO2) membranes. The high chemical stability of ultrathin HfO2 enables long-lived experiments with <2 nm diameter pores that last several hours, in which we observe >50 000 DNA translocations with no detectable pore expansion. Mean DNA velocities are slower than velocities through comparable silicon nitride pores, providing evidence that HfO2 nanopores have favorable physicochemical interactions with nucleic acids that can be leveraged to slow down DNA in a nanopore. PMID:24083444

  15. Metal–Organic Nanosheets Formed via Defect-Mediated Transformation of a Hafnium Metal–Organic Framework

    PubMed Central

    2017-01-01

    We report a hafnium-containing MOF, hcp UiO-67(Hf), which is a ligand-deficient layered analogue of the face-centered cubic fcu UiO-67(Hf). hcp UiO-67 accommodates its lower ligand:metal ratio compared to fcu UiO-67 through a new structural mechanism: the formation of a condensed “double cluster” (Hf12O8(OH)14), analogous to the condensation of coordination polyhedra in oxide frameworks. In oxide frameworks, variable stoichiometry can lead to more complex defect structures, e.g., crystallographic shear planes or modules with differing compositions, which can be the source of further chemical reactivity; likewise, the layered hcp UiO-67 can react further to reversibly form a two-dimensional metal–organic framework, hxl UiO-67. Both three-dimensional hcp UiO-67 and two-dimensional hxl UiO-67 can be delaminated to form metal–organic nanosheets. Delamination of hcp UiO-67 occurs through the cleavage of strong hafnium-carboxylate bonds and is effected under mild conditions, suggesting that defect-ordered MOFs could be a productive route to porous two-dimensional materials. PMID:28343394

  16. Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

    NASA Astrophysics Data System (ADS)

    Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

    Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

  17. Study of gas tungsten arc welding procedures for tantalum alloy T-111 (Ta-8 W-2Hf) plate

    NASA Technical Reports Server (NTRS)

    Gold, R. E.; Kesterson, R. L.

    1973-01-01

    Methods of eliminating or reducing underbread cracking in multipass GTA welds in thick T-111 plate were studied. Single V butt welds prepared using experimental filler metal compositions and standard weld procedures resulted in only moderate success in reducing underbread cracking. Subsequent procedural changes incorporating manual welding, slower weld speeds, and three or fewer fill passes resulted in crack-free single V welds only when the filler metal was free of hafnium. The double V joint design with successive fill passes on opposite sides of the joint produced excellent welds. The quality of each weld was determined metallographically since the cracking, when present, was very slight and undetectable using standard NDT techniques. Tensile and bend tests were performed on selected weldments. The inherent filler metal strength and the joint geometry determined the strength of the weldment. Hardness and electron beam microprobe traverses were made on selected specimens with the result that significant filler metal-base metal dilution as well as hafnium segregation was detected. A tentative explanation of T-111 plate underbread cracking is presented based on the intrinsic effects of hafnium in the weldment.

  18. Method and apparatus for studying high-temperature properties of conductive materials in the interests of nuclear power engineering

    NASA Astrophysics Data System (ADS)

    Savvatimskiy, A. I.; Onufriev, S. V.

    2016-12-01

    Physical processes during a rapid (microsecond) heating of metals, carbon, and their compounds by a single pulse of electric current are discussed. Effects arising in such short-term heating near the melting point are noted: the electron emission and heat capacity anomalies and the possible occurrence of Frenkel pair (interstitial atom and vacancy). The problem of measuring the temperature using optical methods under pulse heating is considered, including the use of a specimen in the form of a blackbody model. The melting temperature of carbon (4800-4900 K) is measured at increased pulse pressure. The results of studying the properties of metals (by example of zirconium and hafnium) and of zirconium carbide at high temperatures are discussed. The schematics of the pulse setups and the instrumentation, as well as specimens for a pulse experiment, are presented.

  19. Stress-rupture strength and microstructural stability of tungsten-hafnium-carbon-wire reinforced superalloy composites

    NASA Technical Reports Server (NTRS)

    Petrasek, D. W.; Signorelli, R. A.

    1974-01-01

    Tungsten-hafnium-carbon - superalloy composites were found to be potentially useful for turbine blade applications on the basis of stress-rupture strength. The 100- and 1000-hr rupture strengths calculated for 70 vol. % fiber composites based on test data at 1090C (2000F) were 420 and 280 MN/m2 (61,000 and 41,000 psi, respectively). The investigation indicated that, with better quality fibers, composites having 100- and 1000-hr rupture strengths of 570 and 370 MN/m2 (82,000 and 54,000 psi, respectively), may be obtained. Metallographic studies indicated sufficient fiber-matrix compatibility for 1000 hr or more at 1090C (2000F).

  20. Preservation of Earth-forming events in the tungsten isotopic composition of modern flood basalts.

    PubMed

    Rizo, Hanika; Walker, Richard J; Carlson, Richard W; Horan, Mary F; Mukhopadhyay, Sujoy; Manthos, Vicky; Francis, Don; Jackson, Matthew G

    2016-05-13

    How much of Earth's compositional variation dates to processes that occurred during planet formation remains an unanswered question. High-precision tungsten isotopic data from rocks from two large igneous provinces, the North Atlantic Igneous Province and the Ontong Java Plateau, reveal preservation to the Phanerozoic of tungsten isotopic heterogeneities in the mantle. These heterogeneities, caused by the decay of hafnium-182 in mantle domains with high hafnium/tungsten ratios, were created during the first ~50 million years of solar system history, indicating that portions of the mantle that formed during Earth's primary accretionary period have survived to the present. Copyright © 2016, American Association for the Advancement of Science.

  1. STEM and APT characterization of scale formation on a La,Hf,Ti-doped NiCrAl model alloy.

    PubMed

    Unocic, Kinga A; Chen, Yimeng; Shin, Dongwon; Pint, Bruce A; Marquis, Emmanuelle A

    2018-06-01

    A thermally grown scale formed on a cast NiCrAl model alloy doped with lanthanum, hafnium, and titanium was examined after isothermal exposure at 1100 °C for 100 h in dry flowing O 2 to understand the dopant segregation along scale grain boundaries. The complex scale formed on the alloy surface was composed of two types of substrates: phase-dependent, thin (<250 nm) outer layers and a columnar-grained ∼3.5 μm inner alumina layer. Two types of oxides formed between the inner and outer scale layers: small (3-15 nm) La 2 O 3 and larger (≤50 nm) HfO 2 oxide precipitates. Nonuniform distributions of the hafnium, lanthanum, and titanium dopants were observed along the inner scale grain boundaries, with hafnium dominating in most of the grain boundaries of α-Al 2 O 3. The concentration of reactive elements (RE) seemed to strongly depend on the grain boundary structure. The level of titanium grain boundary segregation in the inner scale decreased toward the model alloy (substrate), confirming the fast outward diffusion of titanium. Hafnium was also observed at the metal-scale interface and in the γ' (Ni 3 Al) phase of the alloy. High-resolution scanning transmission electron microscopy (STEM) confirmed the substitution of REs for aluminum atoms at the scale grain boundaries, consistent with both the semiconducting band structure and the site-blocking models. Both STEM and atom probe tomography allowed quantification of REs along the scale grain boundaries across the scale thickness. Analysis of the scale morphology after isothermal exposure in flowing oxygen revealed a myriad of new precipitate phases, RE segregation dependence on grain boundary type, and atomic arrangement along scale grain boundaries, which is expected to influence the scale growth rate, stability, and mechanical properties. Copyright © 2018 Elsevier Ltd. All rights reserved.

  2. Chemical precursors to non-oxide ceramics: Macro to nanoscale materials

    NASA Astrophysics Data System (ADS)

    Forsthoefel, Kersten M.

    Non-oxide ceramics exhibit a number of important properties that make them ideal for technologically important applications (thermal and chemical stability, high strength and hardness, wear-resistance, light weight, and a range of electronic and optical properties). Unfortunately, traditional methodologies to these types of materials are limited to fairly simple shapes and complex processed forms cannot be attained through these methods. The establishment of the polymeric precursor approach has allowed for the generation of advanced materials, such as refractory non-oxide ceramics, with controlled compositions, under moderate conditions, and in processed forms. The goal of the work described in this dissertation was both to develop new processible precursors to technologically important ceramics and to achieve the formation of advanced materials in processed forms. One aspect of this research exploited previously developed preceramic precursors to boron carbide, boron nitride and silicon carbide for the generation of a wide variety of advanced materials: (1) ultra-high temperature ceramic (UHTC) structural materials composed of hafnium boride and related composite materials, (2) the quaternary borocarbide superconductors, and (3) on the nanoscale, non-oxide ceramic nanotubules. The generation of the UHTC and the quaternary borocarbide materials was achieved through a method that employs a processible polymer/metal(s) dispersion followed by subsequent pyrolyses. In the case of the UHTC, hafnium oxide, hafnium, or hafnium boride powders were dispersed in a suitable precursor to afford hafnium borides or related composite materials (HfB2/HfC, HfB2/HfN, HfB2/SiC) in high yields and purities. The quaternary borocarbide superconducting materials were produced from pyrolyses of dispersions containing appropriate stoichiometric amounts of transition metal, lanthanide metal, and the polyhexenyldecaborane polymer. Both chemical vapor deposition (CVD) based routes employing a molecular precursor and porous alumina templating routes paired with solution-based methodologies are shown to generate non-oxide ceramic nanotubules of boron carbide, boron nitride and silicon carbide compositions. In the final phase of this work, a new metal-catalyzed route to poly(1-alkenyl- o-carborane) homopolymers and related copolymers was developed. Both homopolymers of 1-alkenyl-o-carboranes (1-vinyl-, 1-butenyl-, 1-hexenyl-) and copolymers of 1-hexenyl-o-carborane and allyltrimethylsilane or 1-hexenyl-o-carborane and 6-hexenyldecaborane were synthesized via the Cp2ZrMe2/B(C6F5) 3 catalyst system. A copolymer containing 1-hexenyl-o-carborane and the cross-linking agent, 6-hexenyldecaborane, was synthetically designed which exhibits initial cross-linking at ˜250°C and then converts in 75% yields to boron carbide at 1250°C.

  3. Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

    NASA Astrophysics Data System (ADS)

    Gaballa, Osama Gaballa Bahig

    Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering temperature, and hot-pressing pressure. Also, WC additions to Ta4HfC5 were found to improve densification and increase microhardness. The ability to process these materials at relatively low temperature would save energy and reduce cost. Boron-based hard materials are used in numerous applications such as industrial machining, armor plating, and wear-resistant coatings. It was often thought that in addition to strong bonding, super-hard materials must also possess simple crystallographic unit cells with high symmetry and a minimum number of crystal defects (e.g., diamond and cubic boron nitride (cBN)). However, one ternary boride, AlMgB14, deviates from this paradigm; AlMgB 14 has a large, orthorhombic unit cell (oI64) with multiple icosahedral boron units. TiB2 has been shown to be an effective reinforcing phase in AlMgB 14, raising hardness, wear resistance, and corrosion resistance. Thus, it was thought that adding other, similar phases (i.e., ZrB2 and HfB2) to AlMgB14 could lead to useful improvements in properties vis-à-vis pure AlMgB14. Group IV metal diborides (XB2, where X = Ti, Zr, or Hf) are hard, ultra-high temperature ceramics. These compounds have a primitive hexagonal crystal structure (hP3) with planes of graphite-like boride rings above and below planes of metal atoms. Unlike graphite, there is strong bonding between the planes, resulting in high hardness. For this study two-phase composites of 60 vol. % metal diborides with 40 vol. % AlMgB14 were produced and characterized.

  4. A COMPARISON OF EXPERIMENTS AND THREE-DIMENSIONAL ANALYSIS TECHNIQUES. PART I. UNPOISONED UNIFORM SLAB CORE WITH A PARTIALLY INSERTED HAFNIUM ROD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Renzi, N.E.; Roseberry, R.J.

    >The experimental measurements and nuclear analysis of a uniformly loaded, unpoisoned slab core with a partially insented hafnium rod are described. Comparisons of experimental data with calculated results of the UFO code and flux synthesis techniques are given. It was concluded that one of the flux synthesis techniques and the UFO code are able to predict flux distributions to within approximately 5% of experiment for most cases. An error of approximately 10% was found in the synthesis technique for a channel near the partially inserted rod. The various calculations were able to predict neutron pulsed shutdowns to only approximately 30%.more » (auth)« less

  5. Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles

    NASA Astrophysics Data System (ADS)

    Widjaja, Yuniarto; Musgrave, Charles B.

    2002-08-01

    Atomic layer deposition (ALD) of hafnium oxide (HfO2) using HfCl4 and H2O as precursors is studied using density functional theory. The mechanism consists of two deposition half-reactions: (1) HfCl4 with Hf-OH sites, and (2) H2O with Hf-Cl sites. Both half-reactions exhibit stable intermediates with energies lower than those of the final products. We show that increasing the temperature reduces the stability of the complex. However, increasing temperature also increases the dissociation free-energy barrier, which in turn results in increased desorption of adsorbed precursors. Both half-reactions are qualitatively similar to the corresponding reactions of ZrO2 ALD using ZrCl4 and H2O.

  6. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

    DOE PAGES

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; ...

    2017-02-13

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf 1-xZr xO 2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm -2K -1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarizationmore » (x = 0, 0.91, 1).« less

  7. A change in the geodynamics of continental growth 3 billion years ago.

    PubMed

    Dhuime, Bruno; Hawkesworth, Chris J; Cawood, Peter A; Storey, Craig D

    2012-03-16

    Models for the growth of continental crust rely on knowing the balance between the generation of new crust and the reworking of old crust throughout Earth's history. The oxygen isotopic composition of zircons, for which uranium-lead and hafnium isotopic data provide age constraints, is a key archive of crustal reworking. We identified systematic variations in hafnium and oxygen isotopes in zircons of different ages that reveal the relative proportions of reworked crust and of new crust through time. Growth of continental crust appears to have been a continuous process, albeit at variable rates. A marked decrease in the rate of crustal growth at ~3 billion years ago may be linked to the onset of subduction-driven plate tectonics.

  8. [Immobilization of pectawamorine G10x on silichromes].

    PubMed

    Bogatskiĭ, A V; Davidenko, T I; Gren', T A

    1980-01-01

    Immobilization of pectawamorine G10x on silochromes, using cyanuric chloride, 2,4-toluylene diisocyanate, glutaric dialdehyde, thionyl chloride, phosphorus tribromide, titanium tetrachloride, zirconium oxychloride and hafnium oxychloride was studied. The use of glutaric dialdehyde assured the strongest binding and the preatest stability of activity. Properties of the native pectawamorine G10x and immobilized preparations were studied on a comparative basis. Pectawamorine G10x immobilized by means of hafnium oxychloride showed increased stability when stored at 5 degrees C and used repeatedly. In every case, except for cyanuric chloride and glutaric dialdehyde, maximum activity was at a temperature 10 degrees C higher than for the native enzyme, and optimum pH varied for the preparations with different binding reagents.

  9. Investigation to develop a method to apply diffusion barrier to high strength fibers

    NASA Technical Reports Server (NTRS)

    Veltri, R. D.; Paradis, R. D.; Douglas, F. C.

    1975-01-01

    A radio frequency powered ion plating process was used to apply the diffusion barriers of aluminum oxide, yttrium oxide, hafnium oxide and titanium carbide to a substrate tungsten fiber. Each of the coatings was examined as to its effect on both room temperature strength and tensile strength of the base tungsten fiber. The coated fibers were then overcoated with a nickel alloy to become single cell diffusion couples. These diffusion couples were exposed to 1093 C for 24 hours, cycled between room temperature and 1093 C, and given a thermal anneal for 100 hours at 1200 C. Tensile testing and metallographic examinations determined that the hafnium oxide coating produced the best high temperature diffusion barrier for tungsten of the four coatings.

  10. Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

    2017-07-01

    In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

  11. Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

    NASA Astrophysics Data System (ADS)

    Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.

    2018-05-01

    The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

  12. Tracing the history of submarine hydrothermal inputs and the significance of hydrothermal hafnium for the seawater budget - A combined Pb-Hf-Nd isotope approach

    USGS Publications Warehouse

    van de Flierdt, T.; Frank, M.; Halliday, A.N.; Hein, J.R.; Hattendorf, B.; Gunther, D.; Kubik, P.W.

    2004-01-01

    Secular variations in the Pb isotopic composition of a mixed hydrogenous-hydrothermal ferromanganese crust from the Bauer Basin in the eastern Equatorial Pacific provide clear evidence for changes in hydrothermal contributions during the past 7 Myr. The nearby Galapagos Rise spreading center provided a strong hydrothermal flux prior to 6.5 Ma. After 6.5 Ma, the Pb became stepwise more radiogenic and more similar to Equatorial Pacific seawater, reflecting the westward shift of spreading to the presently active East Pacific Rise (EPR). A second, previously unrecognized enhanced hydrothermal period occurred between 4.4 and 2.9 Ma, which reflects either off-axis hydrothermal activity in the Bauer Basin or a late-stage pulse of hydrothermal Pb from the then active, but waning Galapagos Rise spreading center. Hafnium isotope time-series of the same mixed hydrogenous-hydrothermal crust show invariant values over the past 7 Myr. Hafnium isotope ratios, as well as Nd isotope ratios obtained for this crust, are identical to that of hydrogenous Equatorial Pacific deep water crusts and clearly indicate that hydrothermal Hf, similar to Nd, does not travel far from submarine vents. Therefore, we suggest that hydrothermal Hf fluxes do not contribute significantly to the global marine Hf budget. ?? 2004 Elsevier B.V. All rights reserved.

  13. Composition effects on mechanical properties of tungsten-rhenium-hafnium-carbon alloys

    NASA Technical Reports Server (NTRS)

    Witzke, W. R.

    1973-01-01

    The mechanical properties of rod and sheet fabricated from arc melted W-4Re-Hf-C alloys containing up to about 0.8 mol percent hafnium carbide (HfC) were evaluated in the as-worked condition. The DBTT's of electropolished bend and tensile specimens were independent of HfC content in this range but dependent on excess Hf or C above that required for stoichiometric HfC. Low temperature ductility was a maximum at Hf contents slightly in excess of stoichiometric. Variations in high temperature strength were also dependent on excess Hf and C. Maximum creep strengthening also occurred at Hf contents in excess of stoichiometric. Analysis of extracted second phase particles indicated that creep strength was reduced by increasing WC content in the HfC particles.

  14. Compatibility of refractory materials for nuclear reactor poison control systems

    NASA Technical Reports Server (NTRS)

    Sinclair, J. H.

    1974-01-01

    Metal-clad poison rods have been considered for the control system of an advanced space power reactor concept studied at the NASA Lewis Research Center. Such control rods may be required to operate at temperatures of about 140O C. Selected poison materials (including boron carbide and the diborides of zirconium, hafnium, and tantalum) were subjected to 1000-hour screening tests in contact with candidate refractory metal cladding materials (including tungsten and alloys of tantalum, niobium, and molybdenum) to assess the compatibility of these materials combinations at the temperatures of interest. Zirconium and hafnium diborides were compatible with refractory metals at 1400 C, but boron carbide and tantalum diboride reacted with the refractory metals at this temperature. Zirconium diboride also showed promise as a reaction barrier between boron carbide and tungsten.

  15. Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

    NASA Astrophysics Data System (ADS)

    Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

    2012-01-01

    We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

  16. Study of bulk Hafnium oxide (HfO2) under compression

    NASA Astrophysics Data System (ADS)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  17. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    NASA Astrophysics Data System (ADS)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  18. Sol-gel Technology and Advanced Electrochemical Energy Storage Materials

    NASA Technical Reports Server (NTRS)

    Chu, Chung-tse; Zheng, Haixing

    1996-01-01

    Advanced materials play an important role in the development of electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. The sol-gel process is a versatile solution for use in the fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. This processing technique is particularly useful in producing porous materials with high surface area and low density, two of the most desirable characteristics for electrode materials. In addition,the porous surface of gels can be modified chemically to create tailored surface properties, and inorganic/organic micro-composites can be prepared for improved material performance device fabrication. Applications of several sol-gel derived electrode materials in different energy storage devices are illustrated in this paper. V2O5 gels are shown to be a promising cathode material for solid state lithium batteries. Carbon aerogels, amorphous RuO2 gels and sol-gel derived hafnium compounds have been studied as electrode materials for high energy density and high power density electrochemical capacitors.

  19. Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates

    NASA Astrophysics Data System (ADS)

    Zhu, Shiyang; Nakajima, Anri

    2007-12-01

    Hafnium oxide (HfO2) thin films were deposited on Ge substrates at 300 °C using atomic layer deposition (ALD) with tetrakis(diethylamino)hafnium (termed as TDEAH) as a precursor and water as an oxidant. The deposition rate was estimated to be 0.09 nm/cycle and the deposited HfO2 films have a smooth surface and an almost stoichiometric composition, indicating that the growth follows a layer-by-layer kinetics, similarly to that on Si substrates. Si nitride thin films were also deposited on Ge by ALD using SiCl4 as a precursor and NH3 as an oxidant. Si nitride has a smaller deposition rate of about 0.055 nm/cycle and a larger gate leakage current than HfO2 deposited on Ge by ALD.

  20. Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

    NASA Astrophysics Data System (ADS)

    Mora, M.; Vera, E.; Aperador, W.

    2016-02-01

    In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

  1. Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

    2009-12-01

    Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

  2. 40 CFR 471.95 - Pretreatment standards for new sources (PSNS).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... I—PSNS. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium rinsed following molten salt treatment Chromium 0.333...

  3. 40 CFR 471.95 - Pretreatment standards for new sources (PSNS).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... I—PSNS. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium rinsed following molten salt treatment Chromium 0.333...

  4. 40 CFR 471.95 - Pretreatment standards for new sources (PSNS).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... I—PSNS. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium rinsed following molten salt treatment Chromium 0.333...

  5. Nickel aluminides and nickel-iron aluminides for use in oxidizing environments

    DOEpatents

    Liu, Chain T.

    1988-03-15

    Nickel aluminides and nickel-iron aluminides treated with hafnium or zirconium, boron and cerium to which have been added chromium to significantly improve high temperature ductility, creep resistance and oxidation properties in oxidizing environments.

  6. 40 CFR 471.94 - Pretreatment standards for existing sources (PSES).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... I—PSES. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide...

  7. 40 CFR 471.93 - New source performance standards (NSPS).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... of process wastewater pollutants (p) Molten salt rinse. Subpart I—NSPS Pollutant or pollutant... zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide 0.220 0.091 Nickel 1.45 0.960...

  8. 40 CFR 471.94 - Pretreatment standards for existing sources (PSES).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... I—PSES. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide...

  9. 40 CFR 471.93 - New source performance standards (NSPS).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... of process wastewater pollutants (p) Molten salt rinse. Subpart I—NSPS Pollutant or pollutant... zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide 0.220 0.091 Nickel 1.45 0.960...

  10. 40 CFR 471.94 - Pretreatment standards for existing sources (PSES).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... I—PSES. There shall be no discharge of process wastewater pollutants. (p) Molten salt rinse. Subpart... (pounds per million off-pounds) of zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide...

  11. 40 CFR 471.93 - New source performance standards (NSPS).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... of process wastewater pollutants (p) Molten salt rinse. Subpart I—NSPS Pollutant or pollutant... zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide 0.220 0.091 Nickel 1.45 0.960...

  12. High-energy X-ray detection by hafnium-doped organic-inorganic hybrid scintillators prepared by sol-gel method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, Yan; Koshimizu, Masanori, E-mail: koshi@qpc.che.tohoku.ac.jp; Yahaba, Natsuna

    2014-04-28

    With the aim of enhancing the efficiency with which plastic scintillators detect high-energy X-rays, hafnium-doped organic-inorganic hybrid scintillators were fabricated via a sol-gel method. Transmission electron microscopy of sampled material reveals the presence of Hf{sub x}Si{sub 1−x}O{sub 2} nanoparticles, dispersed in a polymer matrix that constitutes the active material of the X-ray detector. With Hf{sub x}Si{sub 1−x}O{sub 2} nanoparticles incorporated in the polymer matrix, the absorption edge and the luminescence wavelength is shifted, which we attribute to Mie scattering. The detection efficiency for 67.4-keV X-rays in a 0.6-mm-thick piece of this material is two times better than the same thicknessmore » of a commercial plastic scintillator-NE142.« less

  13. Hafnium—an optical hydrogen sensor spanning six orders in pressure

    PubMed Central

    Boelsma, C.; Bannenberg, L. J.; van Setten, M. J.; Steinke, N.-J.; van Well, A. A.; Dam, B.

    2017-01-01

    Hydrogen detection is essential for its implementation as an energy vector. So far, palladium is considered to be the most effective hydrogen sensing material. Here we show that palladium-capped hafnium thin films show a highly reproducible change in optical transmission in response to a hydrogen exposure ranging over six orders of magnitude in pressure. The optical signal is hysteresis-free within this range, which includes a transition between two structural phases. A temperature change results in a uniform shift of the optical signal. This, to our knowledge unique, feature facilitates the sensor calibration and suggests a constant hydrogenation enthalpy. In addition, it suggests an anomalously steep increase of the entropy with the hydrogen/metal ratio that cannot be explained on the basis of a classical solid solution model. The optical behaviour as a function of its hydrogen content makes hafnium well-suited for use as a hydrogen detection material. PMID:28580959

  14. Zirconium and hafnium fractionation in differentiation of alkali carbonatite magmatic systems

    NASA Astrophysics Data System (ADS)

    Kogarko, L. N.

    2016-05-01

    Zirconium and hafnium are valuable strategic metals which are in high demand in industry. The Zr and Hf contents are elevated in the final products of magmatic differentiation of alkali carbonatite rocks in the Polar Siberia region (Guli Complex) and Ukraine (Chernigov Massif). Early pyroxene fractionation led to an increase in the Zr/Hf ratio in the evolution of the ultramafic-alkali magmatic system due to a higher distribution coefficient of Hf in pyroxene with respect to Zr. The Rayleigh equation was used to calculate a quantitative model of variation in the Zr/Hf ratio in the development of the Guli magmatic system. Alkali carbonatite rocks originated from rare element-rich mantle reservoirs, in particular, the metasomatized mantle. Carbonated mantle xenoliths are characterized by a high Zr/Hf ratio due to clinopyroxene development during metasomatic replacement of orthopyroxene by carbonate fluid melt.

  15. Development of Advanced Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Path Toward 2700 F Temperature Capability and Beyond

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Good, Brian; Costa, Gustavo; Bhatt, Ramakrishna T.; Fox, Dennis S.

    2017-01-01

    Advanced environmental barrier coating systems for SiC-SiC Ceramic Matrix Composite (CMC) turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant coating development challenges is to achieve prime-reliant environmental barrier coating systems to meet the future 2700F EBC-CMC temperature stability and environmental durability requirements. This presentation will emphasize recent NASA environmental barrier coating system testing and down-selects, particularly the development path and properties towards 2700-3000F durability goals by using NASA hafnium-hafnia-rare earth-silicon-silicate composition EBC systems for the SiC-SiC CMC turbine component applications. Advanced hafnium-based compositions for enabling next generation EBC and CMCs capabilities towards ultra-high temperature ceramic coating systems will also be briefly mentioned.

  16. Fabrication of cermet bearings for the control system of a high temperature lithium cooled nuclear reactor

    NASA Technical Reports Server (NTRS)

    Yacobucci, H. G.; Heestand, R. L.; Kizer, D. E.

    1973-01-01

    The techniques used to fabricate cermet bearings for the fueled control drums of a liquid metal cooled reference-design reactor concept are presented. The bearings were designed for operation in lithium for as long as 5 years at temperatures to 1205 C. Two sets of bearings were fabricated from a hafnium carbide - 8-wt. % molybdenum - 2-wt. % niobium carbide cermet, and two sets were fabricated from a hafnium nitride - 10-wt. % tungsten cermet. Procedures were developed for synthesizing the material in high purity inert-atmosphere glove boxes to minimize oxygen content in order to enhance corrosion resistance. Techniques were developed for pressing cylindrical billets to conserve materials and to reduce machining requirements. Finishing was accomplished by a combination of diamond grinding, electrodischarge machining, and diamond lapping. Samples were characterized in respect to composition, impurity level, lattice parameter, microstructure and density.

  17. Experimental and first-principles studies on the elastic properties of α-hafnium metal under pressure

    DOE PAGES

    Qi, Xintong; Wang, Xuebing; Chen, Ting; ...

    2016-03-30

    Compressional and shear wave velocities of the α phase of hafnium have been measured up to 10.4 GPa at room temperature using ultrasonic interferometry in a multi-anvil apparatus. A finite strain equation of state analysis yielded K s0 = 110.4 (5) GPa, G 0 = 54.7(5) GPa,K s0' = 3.7 and G 0' = 0.6 for the elastic bulk and shear moduli and their pressure derivatives at ambient conditions. Complementary to the experimental data, the single crystal elastic constants, elastic anisotropy and the unit cell axial ratio c/a of α-hafnium at high pressures were investigated by Density Functional Theory (DFT)more » based first principles calculations. A c/a value of 1.605 is predicted for α-Hf at 40 GPa, which is in excellent agreement with previous experimental results. The low-pressure derivative of the shear modulus observed in our experimental data up to 10 GPa was found to originate from the elastic constant C44 which exhibits negligible pressure dependence within the current experimental pressure range. At higher pressures (>10 GPa), C 44 was predicted to soften and the shear wave velocity ν S trended to decrease with pressure, which can be interpreted as a precursor to the α-ω transition similar to that observed in other group IV elements (titanium and zirconium). Here, the acoustic velocities, bulk and shear moduli, and the acoustic Debye temperature (θ D = 240.1 K) determined from the current experiments were all compared well with those predicted by our theoretical DFT calculations.« less

  18. 40 CFR 421.331 - Specialized definitions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 28 2010-07-01 2010-07-01 true Specialized definitions. 421.331 Section 421.331 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Primary Zirconium and Hafnium...

  19. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of the properties of conductive HfN grown via plasma-assisted atomic layer deposition (PA-ALD) using tetrakis(ethylmethylamido)hafnium on a modified commercially available wafer processing tool. Key properties of these materials for use as gate stack replacement materials are addressed and future directions for further characterization and novel material investigations are proposed.

  20. 40 CFR 421.337 - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 28 2010-07-01 2010-07-01 true [Reserved] 421.337 Section 421.337 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Primary Zirconium and Hafnium Subcategory § 421.337...

  1. 40 CFR 421.335 - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 28 2010-07-01 2010-07-01 true [Reserved] 421.335 Section 421.335 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Primary Zirconium and Hafnium Subcategory § 421.335...

  2. High-strength tungsten alloy with improved ductility

    NASA Technical Reports Server (NTRS)

    Klopp, W. D.; Raffo, P. L.; Rubenstein, L. S.; Witzke, W. R.

    1967-01-01

    Alloy combines superior strength at elevated temperatures with improved ductility at lower temperatures relative to unalloyed tungsten. Composed of tungsten, rhenium, hafnium, and carbon, the alloy is prepared by consumable electrode vacuum arc-melting and can be fabricated into rod, plate, and sheet.

  3. 40 CFR 471.92 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... of process wastewater pollutants. (p) Molten salt rinse. Subpart I—BAT Pollutant or pollutant... zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide 0.220 0.091 Nickel 1.45 0.960...

  4. 40 CFR 471.92 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... of process wastewater pollutants. (p) Molten salt rinse. Subpart I—BAT Pollutant or pollutant... zirconium-hafnium treated with molten salt Chromium 0.333 0.136 Cyanide 0.220 0.091 Nickel 1.45 0.960...

  5. 40 CFR 471.91 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...) Degreasing rinse—subpart I—BPT. There shall be no discharge or process wastewater pollutants. (p) Molten salt.../off-kg (pounds per million off pounds) of zirconium-hafnium treated with molten salt Chromium 3.33 1...

  6. 40 CFR 471.91 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...) Degreasing rinse—subpart I—BPT. There shall be no discharge or process wastewater pollutants. (p) Molten salt.../off-kg (pounds per million off pounds) of zirconium-hafnium treated with molten salt Chromium 3.33 1...

  7. Creep and Oxidation of Hafnium Diboride Based Ultra High Temperature Ceramics at 1500C

    DTIC Science & Technology

    2015-12-01

    through experimentation. Although the Literature Review showed that some theories and models have been developed based on extensive experimental results...of Some Refractory Metals & Ceramics [Fahrenholtz] ........... 14 Figure 4: Creep Strain vs Time Based on Burgers Model ...

  8. New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

    NASA Astrophysics Data System (ADS)

    Guron, Marta

    There is a need for new synthetic routes to high boron content materials for applications as polymeric precursors to ceramics, as well as in neutron shielding and potential medical applications. To this end, new ruthenium-catalyzed olefin metathesis routes have been devised to form new complex polyboranes and polymeric species. Metathesis of di-alkenyl substituted o-carboranes allowed the synthesis of ring-closed products fused to the carborane cage, many of which are new compounds and one that offers a superior synthetic method to one previously published. Acyclic diene metathesis of di-alkenyl substituted m-carboranes resulted in the formation of new main-chain carborane-containing polymers of modest molecular weights. Due to their extremely low char yields, and in order to explore other metathesis routes, ring opening metathesis polymerization (ROMP) was used to generate the first examples of poly(norbornenyl- o-carboranes). Monomer synthesis was achieved via a two-step process, incorporating Ti-catalyzed hydroboration to make 6-(5-norbornenyl)-decaborane, followed by alkyne insertion in ionic liquid media to achieve 1,2-R2 -3-norbornenyl o-carborane species. The monomers were then polymerized using ROMP to afford several examples of poly(norbornenyl- o-carboranes) with relatively high molecular weights. One such polymer, [1-Ph, 3-(=CH2-C5H7-CH2=)-1,2-C 2B10H10]n, had a char yield very close to the theoretical char yield of 44%. Upon random copolymerization with poly(6-(5-norbornenyl) decaborane), char yields significantly increased to 80%, but this number was well above the theoretical value implicating the formation of a boron-carbide/carbon ceramic. Finally, applications of polyboranes were explored via polymer blends toward the synthesis of ceramic composites and the use of polymer precursors as reagents for potential ultra high temperature ceramic applications. Upon pyrolysis, polymer blends of poly(6-(5-norbornenyl)-decaborane) and poly(methylcarbosilane) converted into boron-carbide/silicon-carbide ceramics with high char yields. These polymer blends were also shown to be useful as reagents for synthesis of hafnium-boride/hafnium-carbide/silicon carbide and zirconium-boride/zirconium-carbide/silicon carbide composites.

  9. Characterization of the superconducting state in hafnium hydride under high pressure

    NASA Astrophysics Data System (ADS)

    Duda, A. M.; Szewczyk, K. A.; Jarosik, M. W.; Szcześniak, K. M.; Sowińska, M. A.; Szcześniak, D.

    2018-05-01

    The hydrogen-rich compounds at high pressure may exhibit notably high superconducting transition temperatures. In the paper, we have calculated the basic thermodynamic parameters of the superconducting state in two selected phases of HfH2 hydride under high-pressure respectively at 180 GPa for Cmma and 260 GPa for P21 / m . Calculations has been conducted in the framework of the Eliashberg formalism. In particular, we have determined the values of the critical temperature (TC) to be equal to 8 K and 13 K for the Cmma and P21 / m phases, respectively. Moreover, we have estimated other thermodynamic properties such as the order parameter (Δ (T)) , the thermodynamic critical field (HC (T)) , and the specific heat for the normal (CN) and superconducting (CS) state. Finally, we have shown that the characteristic ratios: RΔ = 2 Δ (0) /kBTC and RC = ΔC (TC) /CN (TC) , which are related to the above thermodynamic functions, slightly differ from the predictions of the Bardeen-Cooper-Schrieffer theory due to the strong-coupling and retardation effects.

  10. Work functions of hafnium nitride thin films as emitter material for field emitter arrays

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gotoh, Yasuhito, E-mail: gotoh.yasuhito.5w@kyoto-u.ac.jp; Fujiwara, Sho; Tsuji, Hiroshi

    The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. Amore » little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.« less

  11. Synthesis of High Symmetry Phase of Hafnium Dioxide Thin Films and Nickel Ferrite's Effect on Microstructure in Composite Heterostructure

    NASA Astrophysics Data System (ADS)

    Straka, Weston J.

    Hafnium dioxide has attracted a great deal of attention recently due to its potential use in two different electronic applications: CMOS and FeRAM. In CMOS, the usefulness of hafnia comes in due to its high dielectric constant and compatibility with current IC processing parameters. For FeRAM, hafnia's recent discovery to exhibit ferroelectricity in an orthorhombic phase makes this material attractive for replacement of the ferroelectric material in FeRAM. This study shows the feasibility of depositing thin films of hafnium oxide via chemical solution deposition for integration into these devices. The processing parameters necessary to produce this phase show how non-equilibrium processing plays a role in its synthesis. The temperature necessary to achieve the high symmetry phase was at 725 °C for 3 minutes on sapphire, silicon, and coated silicon substrates. The thermal conductivity of each was viewed as the property that allowed the hafnia formation. The dielectric constant of the hafnia films were between 30 and 32 with low dissipation factors and up to 47 with a poor dissipation factor all at 1 kHz. The formation of this phase was shown to be thickness independent with the high symmetry phase existing up to 300 nm film thickness. Interfacing the hafnia film with nickel ferrite was also studied to identify the possibility of using this composite for non-destructive reading of FeRAM. The magnetic properties showed an unchanged nickel ferrite film but the interface between the two was poor leading to the conclusion that more work must be done to successfully integrate these two films.

  12. Processing and characterization of boron carbide-hafnium diboride ceramics

    NASA Astrophysics Data System (ADS)

    Brown-Shaklee, Harlan James

    Hafnium diboride based ceramics are promising candidate materials for advanced aerospace and nuclear reactor components. The effectiveness of boron carbide and carbon as HfB2 sintering additives was systematically evaluated. In the first stage of the research, boron carbide and carbon additives were found to improve the densification behavior of milled HfB2 powder in part by removing oxides at the HfB2 surface during processing. Boron carbide additives reduced the hot pressing temperature of HfB2 by 150°C compared to carbon, which reduced the hot pressing temperature by ˜50°C. Reduction of oxide impurities alone could not explain the difference in sintering enhancement, however, and other mechanisms of enhancement were evaluated. Boron carbides throughout the homogeneity range were characterized to understand other mechanisms of sintering enhancement in HfB2. Heavily faulted carbon rich and boron rich boron carbides were synthesized for addition to HfB2. The greatest enhancement to densification was observed in samples containing boron- and carbon-rich compositions whereas B6.5 C provided the least enhancement to densification. It is proposed that carbon rich and boron rich boron carbides create boron and hafnium point defects in HfB2, respectively, which facilitate densification. Evaluation of the thermal conductivity (kth) between room temperature and 2000°C suggested that the stoichiometry of the boron carbide additives did not significantly affect kth of HfB2-BxC composites. The improved sinterability and the high kth (˜110 W/m-K at 300K and ˜90 W/m-K at 1000°C ) of HfB2-BxC ceramics make them excellent candidates for isotopically enriched reactor control materials.

  13. A COMPARISON OF EXPERIMENTS AND THREE-DIMENSIONAL ANALYSIS TECHNIQUES. PART II. UNPOISONED UNIFORM SLAB CORE WITH A PARTIALLY INSERTED HAFNIUM ROD AND A PARTIALLY INSERTED WATER GAP

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Roseberry, R.J.

    The experimental measurements and nuclear analysis of a uniformly loaded, unpoisoned slab core with a partially inserted hafnium rod and/or a partially inserted water gap are described. Comparisons of experimental data with calculated results of the UFO core and flux synthesis techniques are given. It is concluded that one of the flux synthesis techniques and the UFO code are able to predict flux distributions to within approximately -5% of experiment for most cases, with a maximum error of approximately -10% for a channel at the core- reflector boundary. The second synthesis technique failed to give comparable agreement with experiment evenmore » when various refinements were used, e.g. increasing the number of mesh points, performing the flux synthesis technique of iteration, and spectrum-weighting the appropriate calculated fluxes through the use of the SWAKRAUM code. These results are comparable to those reported in Part I of this study. (auth)« less

  14. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vargas, Mirella; Murphy, N. R.; Ramana, C. V., E-mail: rvchintalapalle@utep.edu

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s} = 25–700 °C). HfO{sub 2} films grown at T{sub s} < 200 °C were amorphous, while those grown at T{sub s} ≥ 200 °C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (ρ) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-ρ-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and themore » microstructure of HfO{sub 2} films.« less

  15. Cathodoluminescence Study of Hafnium Oxide

    NASA Astrophysics Data System (ADS)

    Purcell, Emily; Hengehold, Robert; McClory, John

    2011-10-01

    Hafnium dioxide (HfO2) is increasingly being used in place of silicon oxide as a gate insulator in field effect transistors. This is primarily due to its high dielectric constant, κ, of 25. Samples of HfO2 were grown by either atomic layer deposition (ALD) or pulsed laser deposition (PLD), with the PLD samples having assorted substrate temperatures during deposition (300 C, 500 C, and 750 C). Cathodoluminescence (CL) was chosen as the technique used for studying these HfO2 samples. The CL system used was capable of beam energies ranging from 1 keV to 20 keV and beam currents ranging from 10 μA to 50 μA. A Monte Carlo calculation using CASINO software was performed in order to determine the beam energy for the desired depth of penetration. Measurements were taken at sample temperatures ranging from 7K (closed cycled cryostat) to 300K (room temperature), as well as at various beam energies and beam currents. Comparison will be made between the PLD and ALD spectra.

  16. Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

    PubMed

    Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

    2017-11-24

    We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

  17. Thermomechanical and Thermochemical Behavior of a Hafnium-20 Percent Tantalum Alloy. Ph.D. Thesis - North Carolina State Univ., Raleigh

    NASA Technical Reports Server (NTRS)

    Howell, J. P.

    1971-01-01

    An investigation was conducted to determine the thermomechanical and thermochemical behavior of a high temperature, oxidation resistant, hafnium-20 percent tantalum alloy. The elastic and shear moduli of this alloy were determined in air up to 1000 C and in vacuum up to 2000 C using a mechanical resonance technique. The internal friction of the alloy was measured up to temperatures greater than 1400 C. Room temperature stress-strain behavior of the oxidized and unoxidized alloy was established. The effect of annealing on the elastic and shear moduli of the extruded rod material was investigated. The martensitic-type phase transformation occurring in the alloy was studied using hot stage metallography and electron microscopy. Static oxidation tests were conducted on the alloy at temperatures from 1000 C to 1700 C with weight gain measurements made as a function of time and temperatures. Surface morphology studies were conducted on the oxide coatings formed at the different temperatures using scanning electron microscopy and X-ray diffraction techniques.

  18. IER-297 CED-2: Final Design for Thermal/Epithermal eXperiments with Jemima Plates with Polyethylene and Hafnium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nelson, A. J.; Percher, C. M.; Zywiec, W. J.

    This report presents the final design (CED-2) for IER-297, and focuses on 15 critical configurations using highly enriched uranium (HEU) Jemima plates moderated by polyethylene with and without hafnium diluent. The goal of the U.S. Nuclear Criticality Safety Program’s Thermal/Epithermal eXperiments (TEX) is to design and conduct new critical experiments to address high priority nuclear data needs from the nuclear criticality safety and nuclear data communities, with special emphasis on intermediate energy (0.625 eV – 100 keV) assemblies that can be easily modified to include various high priority diluent materials. The TEX (IER 184) CED-1 Report [1], completed in 2012,more » demonstrated the feasibility of meeting the TEX goals with two existing NCSP fissile assets, plutonium Zero Power Physics Reactor (ZPPR) plates and highly enriched uranium (HEU) Jemima plates. The first set of TEX experiments will focus on using the plutonium ZPPR plates with polyethylene moderator and tantalum diluents.« less

  19. Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

    DOE PAGES

    Hudak, Bethany M.; Depner, Sean W.; Waetzig, Gregory R.; ...

    2017-05-12

    High-temperature phases of hafnium dioxide have exceptionally high dielectric constants and large bandgaps, but quenching them to room temperature remains a challenge. Scaling the bulk form to nanocrystals, while successful in stabilizing the tetragonal phase of isomorphous ZrO 2, has produced nanorods with a twinned version of the room temperature monoclinic phase in HfO 2. Here we use in situ heating in a scanning transmission electron microscope to observe the transformation of an HfO 2 nanorod from monoclinic to tetragonal, with a transformation temperature suppressed by over 1000°C from bulk. When the nanorod is annealed, we observe with atomic-scale resolutionmore » the transformation from twinned-monoclinic to tetragonal, starting at a twin boundary and propagating via coherent transformation dislocation; the nanorod is reduced to hafnium on cooling. Unlike the bulk displacive transition, nanoscale size-confinement enables us to manipulate the transformation mechanism, and we observe discrete nucleation events and sigmoidal nucleation and growth kinetics.« less

  20. 6-Peroxo-6-zirconium crown and its hafnium analogue embedded in a triangular polyanion: [M6(O2)6(OH)6(gamma-SiW10O36)3]18- (M = Zr, Hf).

    PubMed

    Bassil, Bassem S; Mal, Sib Sankar; Dickman, Michael H; Kortz, Ulrich; Oelrich, Holger; Walder, Lorenz

    2008-05-28

    We have synthesized and structurally characterized the unprecedented peroxo-zirconium(IV) containing [Zr6(O2)6(OH)6(gamma-SiW10O36)3]18- (1). Polyanion 1 comprises a cyclic 6-peroxo-6-zirconium core stabilized by three decatungstosilicate units. We have also prepared the isostructural hafnium(IV) analogue [Hf6(O2)6(OH)6(gamma-SiW10O36)3]18- (2). We investigated the acid/base and redox properties of 1 by UV-vis spectroscopy and electrochemistry studies. Polyanion 1 represents the first structurally characterized Zr-peroxo POM with side-on, bridging peroxo units. The simple, one-pot synthesis of 1 and 2 involving dropwise addition of aqueous hydrogen peroxide could represent a general procedure for incorporating peroxo groups into a large variety of transition metal and lanthanide containing POMs.

  1. Isolation of tungsten and tantalum isotopes without supports from. cap alpha. -particle-irradiated hafnium targets

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gasita, S.M.; Iota, B.Z.; Malachkov, A.G.

    1985-11-01

    An extraction procedure has been developed for successive isolation of tungsten (/sup 178/W and /sup 181/W) and tantalum (/sup 179/Ta and /sup 182/Ta) isotopes without supports from ..cap alpha..particle-irradiated hafnium targets. The target, irradiated on a cyclotron, is dissolved in hydrofluoric acid. Tantalum isotopes are extracted with tributyl phosphate (TBP) from 1-5 M HF and are then reextracted with a 1:1 ammonia solution, and hydrofluoric acid is removed by heating. Tungsten isotopes are extracted with a chloroform solution or N-benzoyl-N-phenylhydroxylamine (BPHA) from 11-12 M H/sub 2/SO/sub 4/ or ..cap alpha..-benzoin oxime from 4.5-5.5 M H/sub 2/SO/sub 4/ and are thenmore » reextracted with a l:l ammonia solution. The yield of tungsten isotopes is not less than 95%, and the content of radioactive impurities of other isotopes is not more than 0.1%.« less

  2. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE PAGES

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

  3. Oxidation resistant iron and nickel alloys for high temperature use

    NASA Technical Reports Server (NTRS)

    Hill, V. L.; Misra, S. K.; Wheaton, H. L.

    1970-01-01

    Iron-base and nickel-base alloys exhibit good oxidation resistance and improved ductility with addition of small amounts of yttrium, tantalum /or hafnium/, and thorium. They can be used in applications above the operating temperatures of the superalloys, if high strength materials are not required.

  4. Fractionation of Zr and Hf during the differentiation of peralkaline magmatic system (Lovozero rare metal deposit, Kola Peninsula)

    NASA Astrophysics Data System (ADS)

    Kogarko, Liya

    2016-04-01

    Zirconium and hafnium are valuable strategic metals. We assessed principal features of the distribution of these elements in peralkaline rocks, ores and rock-forming and accessory minerals of Lovozero complex. The accumulation of these elements during the evolution of alkaline magma of Lovozero deposit up to extremely high concentrations in eudialyte ores (5-8% ZrO2 and 1200-1800 ppm Hf) has been established. These ores represent valuable complex raw material not only for Zr and Hf, but for REE as well. We evaluated partition coefficients of these elements in alkaline pyroxenes (aegirines) from porphyry-like agpaitic lujavrites of Lovozero massif which are 0.40 for zirconium and 0.58 for hafnium. We assessed variations of Zr/Hf ratio for all the rocks of Lovozero alkaline massif. The growth of this ratio in the course of the evolution of alkaline magma has been observed from 38 in the earliest magmatic phase, to 44 in the second phase and to 51-53 in the latest manifestation of alkaline magmatsm. On the basis of the obtained data and equations of equilibrium and fractional crystallization the model of the fractionation of zirconium and hafnium during the evolution of Lovozero intrusion has been constructed. We have demonstrated that the source of strongly enriched magmatic systems similar to Lovozero rare metal deposit is short-lived enriched reservoir - metasomatized and carbonatized mantle substrate. We investigated the fractionation of zirconium and hafnium in carbonatized mantle xenoliths from East Antarctica. The elevated Zr/Hf ratios (up to 125) in metasomatized xenoliths by comparison with the chondritic value have been found. The main reactions of carbonate metasomatism lead to the replacement of primary orthopyroxene by clinopyroxene 2Mg2Si2O6 + CaMg(CO3)2 = 2Mg2SiO4 + CaMgSi2O6 + 2CO2 3CaMg(CO3)2 + CaMgSi2O6 = 4CaCO3 + 2Mg2SiO4 + 2CO2 The substantial expansion of the clinopyroxene crystallization field results in increase of Zr/Hf ratio in equilibrium melt due to the higher value of Hf partition coefficient by comparison with Zr. The migration of active carbonate and carbonate-silicate melts equilibrated with the metasomatic wehrlites leads to the increase in Zr/Hf ratio in carbonatized mantle substrate. This work has been financially supported by the grant 15-17-30019 of the Russian Science Foundation.

  5. Gadolinium: Central Metal of the Lanthanoids

    ERIC Educational Resources Information Center

    Laing, Michael

    2009-01-01

    The physical and chemical properties of gadolinium are compared with those of the other lanthanoids. Some properties are intermediate between those of lanthanum and lutetium; some between those of barium and hafnium; and others (unexpectedly) between those of ytterbium and lutetium. Both the remarkably high molar heat capacity of the metal and the…

  6. Quality Control for Ordnance

    DTIC Science & Technology

    1957-01-01

    Hafnium 181. . . . . . . . . . . . . . . . . . . . . . . . . Mercury 204.. Chromium 51...43 days I Mercury 197 . . . . . . . . . . . . . . . . . . . . . . . . . 64 hr R u t h i m 103...desfrzlclive T e s i i g , Vol. VI, No. 1, Sum" mer 1947, pp. 9-20. (72) K. Frerichs, "The Cadmium Sulphide X-ray Detector," J o w n d o/ Applied Pkys- its

  7. Standard specification for nuclear grade hafnium oxide pellets. ASTM standard

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    NONE

    This specification is under the jurisdiction of ASTM Committee C-26 on Nuclear Fuel Cycle and is the direct responsibility of Subcommittee C26.03 on Neutron Absorber Materials Specifications. Current edition approved May 10, 1997. Published May 1998. Originally published as C 1076-87. Last previous edition C 1076-92.

  8. The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Perevalov, T. V., E-mail: timson@isp.nsc.ru; Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk; Aliev, V. Sh.

    2014-02-17

    The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2 eV of hafnia has been studied in stoichiometric and non-stoichiometric hafnium oxide films. Experimental and calculated results from the first principles valence band spectra showed that the stoichiometry violation leads to the formation of the peak density of states in the band gap caused by oxygen vacancies. Cathodoluminescence in the non-stoichiometric film exhibits a band at 2.65 eV that is excited at the energy of 5.2 eV. The optical absorption spectrum calculated for the cubic phase of HfO{sub 2} with oxygen vacancies showsmore » a peak at 5.3 eV. Thus, it could be concluded that the blue luminescence band at 2.7 eV and HfO{sub x} excitation peak at 5.2 eV are due to oxygen vacancies. The thermal trap energy in hafnia was estimated.« less

  9. Hafnium Films and Magnetic Shielding for TIME, A mm-Wavelength Spectrometer Array

    NASA Astrophysics Data System (ADS)

    Hunacek, J.; Bock, J.; Bradford, C. M.; Butler, V.; Chang, T.-C.; Cheng, Y.-T.; Cooray, A.; Crites, A.; Frez, C.; Hailey-Dunsheath, S.; Hoscheit, B.; Kim, D. W.; Li, C.-T.; Marrone, D.; Moncelsi, L.; Shirokoff, E.; Steinbach, B.; Sun, G.; Trumper, I.; Turner, A.; Uzgil, B.; Weber, A.; Zemcov, M.

    2018-04-01

    TIME is a mm-wavelength grating spectrometer array that will map fluctuations of the 157.7-μm emission line of singly ionized carbon ([CII]) during the epoch of reionization (redshift z ˜ 5-9). Sixty transition-edge sensor (TES) bolometers populate the output arc of each of the 32 spectrometers, for a total of 1920 detectors. Each bolometer consists of gold absorber on a ˜ 3 × 3 mm silicon nitride micro-mesh suspended near the corners by 1 × 1 × 500 μm silicon nitride legs targeting a photon-noise-dominated NEP ˜ 1 × 10^{-17} W/√{Hz} . Hafnium films are explored as a lower-T_c alternative to Ti (500 mK) for TIME TESs, allowing thicker support legs for improved yield. Hf T_c is shown to vary between 250 and 450 mK when varying the resident Ar pressure during deposition. Magnetic shielding designs and simulations are presented for the TIME first-stage SQUIDs. Total axial field suppression is predicted to be 5 × 10^7.

  10. Dissolution kinetics of small amounts of oxygen in tantalum alloy T-111 and internal oxide displacement reactions during annealing

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1976-01-01

    Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.

  11. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

    2018-05-01

    The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

  12. The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

    2016-05-01

    Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

  13. Photoluminescence properties of Eu3+ doped HfO2 coatings formed by plasma electrolytic oxidation of hafnium

    NASA Astrophysics Data System (ADS)

    Stojadinović, Stevan; Tadić, Nenad; Ćirić, Aleksandar; Vasilić, Rastko

    2018-03-01

    Plasma electrolytic oxidation was used for synthesis of Eu3+ doped monoclinic HfO2 coatings on hafnium substrate. Results of photoluminescence (PL) measurements show the existence of two distinct regions: one that is related to the blue emission originating from oxygen vacancy defects in HfO2 and the other one characterized with a series of sharp orange-red emission peaks related to f-f transitions of Eu3+ from excited level 5D0 to lower levels 7FJ (J = 0, 1, 2, 3, and 4). PL peaks appearing in excitation spectra of obtained coatings are attributed either to charge transfer state of Eu3+ or to direct excitation of the Eu3+ ground state 7F0 into higher levels of the 4f-manifold. PL of formed coatings increases with PEO time due to an increase of oxygen vacancy defects and the content of Eu3+. Acquired experimental data suggest that hypersensitive electrical dipole transition is much more intense than the magnetic dipole transition, indicating that Eu3+ ions occupy a non-inversion symmetry sites.

  14. Pyroelectricity of silicon-doped hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  15. Spark ablation-inductively coupled plasma spectrometry for analysis of geologic materials

    USGS Publications Warehouse

    Golightly, D.W.; Montaser, A.; Smith, B.L.; Dorrzapf, A.F.

    1989-01-01

    Spark ablation-inductively coupled plasma (SA-ICP) spectrometry is applied to the measurement of hafnium-zirconium ratios in zircons and to the determination of cerium, cobalt, iron, lead, nickel and phosphorus in ferromanganese nodules. Six operating parameters used for the high-voltage spark and argon-ICP combination are established by sequential simplex optimization of both signal-to-background ratio and signal-to-noise ratio. The time-dependences of the atomic emission signals of analytes and matrix elements ablated from a finely pulverized sample embedded in a pressed disk of copper demonstrate selective sampling by the spark. Concentration ratios of hafnium to zirconium in zircons are measured with a precision of 4% (relative standard deviation, RSD). For ferromanganese nodules, spectral measurements based on intensity ratios of analyte line to the Mn(II) 257.610 nm line provide precisions of analysis in the range from 7 to 14% RSD. The accuracy of analysis depends on use of standard additions of the reference material USGS Nod P-1, and an independent measurement of the Mn concentration. ?? 1989.

  16. Addition of oxygen to and distribution of oxides in tantalum alloy T-111 at low concentrations

    NASA Technical Reports Server (NTRS)

    Stecura, S.

    1975-01-01

    Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.

  17. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng

    Due to the favorable operating power, endurance, speed, and density., transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physiocochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resettingmore » the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.« less

  18. Hafnium, Tungsten, and the Differentiation of the Moon and Mars

    NASA Astrophysics Data System (ADS)

    Taylor, G. J.

    2003-11-01

    Measurements of the isotopic composition of tungsten (W) show that lunar samples and Martian meteorites have an excess of W-182. This was produced by the decay of hafnium-182 (Hf-182), an isotope with a half-life of only 9 million years. Because tungsten dissolves enthusiastically in metallic iron and hafnium does not, it is possible to use the abundance of W-182 in rocks formed by melting of the silicate mantle as an indicator of the timing of core formation. However, the concentrations of Hf and W in rocky material can be affected by melting and crystallization, so we also need to know how each element concentrates in common minerals in the mantles of the Moon and Mars. The behavior of Hf has been studied experimentally, but this is not true of W. Kevin Righter (Johnson Space Center) and Charles (Chip) Shearer (University of New Mexico) have filled this knowledge void by determining how W partitions between olivine, high- and low-calcium pyroxene, plagioclase feldspar, and garnet. The new data allowed Righter and Shearer to reexamine available measurements of the isotopic composition of W in lunar samples and Martian meteorites. Their analysis suggests that the lunar magma ocean, a huge magma system that surrounded the Moon when it formed, solidified in less than 30 million years. This is shorter than many theoretical calculations suggest. Pathfinder data and chemical data from Martian meteorites suggest that the core of Mars makes up about 20% of the planet. Core formation and subsequent melting of a region of the mantle containing garnet and high-calcium pyroxene took place less than 20-30 million years after the formation of the first solids in the solar system. This type of research shows the importance of measurements of isotopic compositions of radioactive elements or their decay products and laboratory experiments on the geochemical behavior of those elements.

  19. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  20. Gas Tungsten Arc Welding and Plasma Arc Cutting. Teacher Edition.

    ERIC Educational Resources Information Center

    Fortney, Clarence; And Others

    This welding curriculum guide treats two topics in detail: the care of tungsten electrodes and the entire concept of contamination control and the hafnium electrode and its importance in dual-air cutting systems that use compressed shop air for plasma arc cutting activities. The guide contains three units of instruction that cover the following…

  1. National Defense Stockpile Program. Phase 1. Development and Analyses

    DTIC Science & Technology

    1990-03-01

    G- 12 G-4. Wartime Essential Civilian Tellurium Requirements .......................... G-19 G-5. Estimated Wartime Tellurium Supply and...Order Processing Flowchart for Tellurium .................................. 1-9 1-4. Structure of World Tellurium Production and U.S. Imports, 1983...hafnium, rhenium, tellurium , yttrium and zirconium. Most of the stockpile candidates considered in this report already have significant applications in the

  2. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Treesearch

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  3. Nanotechnology Support for Memristor Nanoelectronics

    DTIC Science & Technology

    2012-03-01

    hafnium oxide; 2) investigation of a conductive atomic force microscopy (cAFM) approach for measuring nanoparticle electrical properties , which was...films; and 4) successful measurement of memristive properties of nanoparticle -loaded insulating films. These results lay the groundwork for follow-on...a cAFM strategy for measuring nanoparticle electrical properties . Our initial approach to measuring nanoparticles was to attempt electrical

  4. Neutron Detection Utilizing Gadolinium Doped Hafnium Oxide Films

    DTIC Science & Technology

    2008-03-01

    2.2. Charge Carriers ................................................................................................ 2-2 2.3. Dopants and Impurities...the movement of the charge carries can be assumed to be at this drift velocity and in the direction of the electric field. 2.3. Dopants and...present even with the best purification processes. However, a material, or dopant , can be intentionally added to vary the electrical

  5. Cryogenic Research

    DTIC Science & Technology

    1952-05-01

    needed work lies in the ultra low- temperature range available only through use of the demagnetization cycle. SUPERCONDUCTIVITY BELOW 10 ABSOLUTE In...In Figure 1 is plotted, as a function of temperature, the magnetic field required to change hafnium from the superconducting to the normal state. For...fields of crystal physics, properties of metals, and magnetism and magnetic resonance. This article discusses the work of one group, the Cryogenics

  6. Insulator Charging in RF MEMS Capacitive Switches

    DTIC Science & Technology

    2005-06-01

    and Simulations,” Journal of Microelectromechanical Systems, 8: 208-217 (June 1999). 5. Neaman , Donald. Semiconductor Physics & Devices. Boston...227-230 (2001). 5. Sze, S.M. Semiconductor Devices: Physics and Technology. New York: Wiley, 1985. 6. Neaman , Donald A. Semiconductor Physics...Radiation Response of Hafnium-Silicate Capacitors,” IEEE Transactions on Nuclear Science, 49: 3191-3196 (December 2002). 3. Neaman , D.A

  7. Amorphous metal alloy and composite

    DOEpatents

    Wang, Rong; Merz, Martin D.

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  8. L2₁ and XA Ordering Competition in Hafnium-Based Full-Heusler Alloys Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb).

    PubMed

    Wang, Xiaotian; Cheng, Zhenxiang; Wang, Wenhong

    2017-10-20

    For theoretical designing of full-Heusler based spintroinc materials, people have long believed in the so-called Site Preference Rule (SPR). Very recently, according to the SPR, there are several studies on XA-type Hafnium-based Heusler alloys X₂YZ, i.e., Hf₂VAl, Hf₂CoZ (Z = Ga, In) and Hf₂CrZ (Z = Al, Ga, In). In this work, a series of Hf₂-based Heusler alloys, Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb), were selected as targets to study the site preferences of their atoms by first-principle calculations. It has been found that all of them are likely to exhibit the L2₁-type structure instead of the XA one. Furthermore, we reveal that the high values of spin-polarization of XA-type Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb) alloys have dropped dramatically when they form the L2₁-type structure. Also, we prove that the electronic, magnetic, and physics nature of these alloys are quite different, depending on the L2₁-type or XA-type structures.

  9. Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

    PubMed

    Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

    2016-01-13

    The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

  10. Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

    2016-05-01

    Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

  11. Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

    PubMed

    Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

    2016-05-27

    Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

  12. Study of the effects of gaseous environmental on the hot corrosion of superalloy materials

    NASA Technical Reports Server (NTRS)

    Smeggil, J. G.

    1981-01-01

    Studies have been conducted to examine the effect of low concentrations of NaCl(g) on the high temperature oxidation behavior of complex superalloys and potential coating formulations modified by silicon and reactive element (i.e., yttrium and hafnium) additions. Depending on alloy composition, a variety of effects were thermogravimetrically produced. Aluminum free alloys such as MAR-M509 and Hastelloy X with molybdenum and tungsten in solid solution showed accelerated (or breakaway) kinetics similar to that observed for Ni-Cr alloys. For IN-792, an alloy high in chromium and low in aluminum, molybdenum and tungsten present in solid solution does not adversely affect oxidation kinetics in the presence of NaCl(g). On the other hand, nickel-base alloys high in aluminum and molybdenum are catastrophically attacked by NaCl-bearing atmospheres. Silicon additions were, in general, observed to slightly improve the oxidation resistance of Ni, Ni-40Cr and CoCrAlY compositions in NaCl(g)-bearing atmospheres. To the degree that processes responsible for Al2O3 whisker formation deleteriously affect protective scale adherence, the addition of yttrium or hafnium can inhibit such whisker growth.

  13. Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

    2017-01-01

    This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

  14. Oxide Protective Coats for Ir/Re Rocket Combustion Chambers

    NASA Technical Reports Server (NTRS)

    Fortini, Arthur; Tuffias, Robert H.

    2003-01-01

    An improved material system has been developed for rocket engine combustion chambers for burning oxygen/ hydrogen mixtures or novel monopropellants, which are highly oxidizing at operating temperatures. The baseline for developing the improved material system is a prior iridium/rhenium system for chambers burning nitrogen tetroxide/monomethyl hydrazine mixtures, which are less oxidizing. The baseline combustion chamber comprises an outer layer of rhenium that provides structural support, plus an inner layer of iridium that acts as a barrier to oxidation of the rhenium. In the improved material system, the layer of iridium is thin and is coated with a thermal fatigue-resistant refractory oxide (specifically, hafnium oxide) that serves partly as a thermal barrier to decrease the temperature and thus the rate of oxidation of the rhenium. The oxide layer also acts as a barrier against the transport of oxidizing species to the surface of the iridium. Tests in which various oxygen/hydrogen mixtures were burned in iridium/rhenium combustion chambers lined with hafnium oxide showed that the operational lifetimes of combustion chambers of the improved material system are an order of magnitude greater than those of the baseline combustion chambers.

  15. High Temperature Oxidation-Resistant Thruster Research

    DTIC Science & Technology

    1990-02-01

    substrates: Refractory metals, ! Ceramics, Composites and I Carbon - carbon . Rhenium and hafnium carbide were selected based on their properties I and... carbon . Rhenium was selected as the primary refractory metal candidate because of its high melting point, no ductile-to- brittle transition in the...of rhenium (Re) with those of other refractory metals. Rhenium has the second highest melting point of the elements, 3013 C, second only to tungsten

  16. Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors

    DTIC Science & Technology

    2011-03-01

    Figures Figure Page 1. Conceptual illustration of the creation of electron-hole pairs and displacement damage in a n -type silicon metal-oxide-silicon...Illustration of the effect, in a CV plot, of oxide trapped charge for a hypothetical n -type device...8 5. Illustration of the effect, in a CV plot, of interface trapped charge for a hypothetical n -type device

  17. What can hafnium isotope ratios arrays tell us about orogenic processes? An insight into geodynamic processes operating in the Alpine/Mediterranean region

    NASA Astrophysics Data System (ADS)

    Henderson, B.; Murphy, J.; Collins, W. J.; Hand, M. P.

    2013-12-01

    Over the last decade, technological advances in laser-ablation sampling techniques have resulted in an increase in the number of combined U-Pb-Hf zircon isotope studies used to investigate crustal evolution on a local, regional and global scale. Hafnium isotope arrays over large time scales (>500 myr) have been interpreted to track evolving plate tectonic configurations, and the geological outputs associated with changing plate boundaries. We use the Alpine-Mediterranean region as an example of how hafnium isotope arrays record the geodynamic processes associated with the complex geological evolution of a region. The geology of Alpine-Mediterranean region preserves a complex, semi-continuous tectonic history that extends from the Neoproterozoic to the present day. Major components of the Variscan and Alpine orogens are microcontinental ribbons derived from the northern Gondwanan margin, which were transferred to the Eurasian plate during the opening and closing of the Rheic and Paleo-Tethys Oceans. Convergence of the Eurasian and African plates commenced in the Mid-Late Cretaceous, following the destruction of the Alpine-Tethys Ocean during the terminal breakup of Pangea. In general, convergence occurred slowly and is characterised by northward accretion of Gondwanan fragments, interspersed with subduction of African lithosphere and intermittent roll-back events. A consequence of this geodynamic scenario was periods of granite-dominated magmatism in an arc-backarc setting. New Hf isotope data from the peri-Gondwanan terranes (Iberia, Meguma and Avalonia) and a compilation of existing Phanerozoic data from the Alpine-Mediterranean region, indicate ~500 myr (Cambrian-Recent) of reworking of peri-Gondwanan crust. The eHf array follows a typical crustal evolution pattern (Lu/Hf=0.015) and is considered to reflect reworking of juvenile peri-Gondwanan (Neoproterozoic) crust variably mixed with an older (~1.8-2.0 Ga) source component, probably Eburnian crust from the West Africa Craton. The Phanerozoic Hf isotopic data from Variscan and Alpine Europe suggest that slow translation of continental fragments from one continent to another produces a characteristic, long-term crustal reworking eHf array, which strongly contrasts with the Hf array defined by Phanerozoic circum-Pacific orogens.

  18. Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition

    Treesearch

    K. Tapily; Joseph E. Jakes; D. S. Stone; P. Shrestha; D. Gu; H. Baumgart; A. A. Elmustafa

    2008-01-01

    The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node have shifted engineers’ attention from the traditional and proven dielectric SiO2 to materials of higher dielectric constant also known as high-k materials such as hafnium oxide (HfO2) and aluminum oxide (Al2O3). These high-k materials are projected to...

  19. High-temperature fabricable nickel-iron aluminides

    DOEpatents

    Liu, Chain T.

    1988-02-02

    Nickel-iron aluminides are described that are based on Ni.sub.3 Al, and have significant iron content, to which additions of hafnium, boron, carbon and cerium are made resulting in Ni.sub.3 Al base alloys that can be fabricated at higher temperatures than similar alloys previously developed. Further addition of molybdenum improves oxidation and cracking resistance. These alloys possess the advantages of ductility, hot fabricability, strength, and oxidation resistance.

  20. Novel Routes for Sintering of Ultra-high Temperature Ceramics and their Properties

    DTIC Science & Technology

    2014-10-31

    UHTCs charge (zirconium and hafnium borides , SiC) with additives (chromium carbide, nickel, chromium, etc.), which activate sintering process, is...temperature phases in a form of carboborides of zirconium and bi borides of zirconium or chromium. Elevation of densification rate of sintered borides is...superplasticity under the slip mechanism of zirconium boride and silica carbide grains on grain boundary interlayers with nanocrystalline grains of carbon

  1. Alkali metal hafnium oxide scintillators

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bourret-Courchesne, Edith; Derenzo, Stephen E.; Taylor, Scott Edward

    The present invention provides for a composition comprising an inorganic scintillator comprising an alkali metal hafnate, optionally cerium-doped, having the formula A 2HfO 3:Ce; wherein A is an alkali metal having a valence of 1, such as Li or Na; and the molar percent of cerium is 0% to 100%. The alkali metal hafnate are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.

  2. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    PubMed

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  3. Biologically Self-Assembled Memristive Circuit Elements

    DTIC Science & Technology

    2010-01-01

    hydrothermal approach, TiO2 nanoparticles were synthesized by slowly stirring a 1:3 volumetric ratio mixture of titanium isopropoxide (TTIP) and isopropyl...Synthesis of TiO2 nanoparticles by hydrolysis and peptization of titanium isopropoxide solution. Journal of Materials Processing Technology 2007, 189...important role interfacing with group IV metal oxides such as hafnium, providing a stable linkage to the surface [3]. Titanium dioxide (TiO2), which is

  4. Mechanistic Studies of Hafnium-Pyridyl Amido-Catalyzed 1-Octene Polymerization and Chain Transfer Using Quench-Labeling Methods.

    PubMed

    Cueny, Eric S; Johnson, Heather C; Anding, Bernie J; Landis, Clark R

    2017-08-30

    Chromophore quench-labeling applied to 1-octene polymerization as catalyzed by hafnium-pyridyl amido precursors enables quantification of the amount of active catalyst and observation of the molecular weight distribution (MWD) of Hf-bound polymers via UV-GPC analysis. Comparison of the UV-detected MWD with the MWD of the "bulk" (all polymers, from RI-GPC analysis) provides important mechanistic information. The time evolution of the dual-detection GPC data, concentration of active catalyst, and monomer consumption suggests optimal activation conditions for the Hf pre-catalyst in the presence of the activator [Ph 3 C][B(C 6 F 5 ) 4 ]. The chromophore quench-labeling agents do not react with the chain-transfer agent ZnEt 2 under the reaction conditions. Thus, Hf-bound polymeryls are selectively labeled in the presence of zinc-polymeryls. Quench-labeling studies in the presence of ZnEt 2 reveal that ZnEt 2 does not influence the rate of propagation at the Hf center, and chain transfer of Hf-bound polymers to ZnEt 2 is fast and quasi-irreversible. The quench-label techniques represent a means to study commercial polymerization catalysts that operate with high efficiency at low catalyst concentrations without the need for specialized equipment.

  5. Measurement and Simulation of Thermal Conductivity of Hafnium-Aluminum Thermal Neutron Absorber Material

    DOE PAGES

    Guillen, Donna Post; Harris, William H.

    2016-05-11

    A metal matrix composite (MMC) material comprised of hafnium aluminide (Al3Hf) intermetallic particles in an aluminum matrix has been identified as a promising material for fast-flux irradiation testing applications. This material can filter thermal neutrons while simultaneously providing high rates of conductive cooling for experiment capsules. Our purpose is to investigate effects of Hf-Al material composition and neutron irradiation on thermophysical properties, which were measured before and after irradiation. When performing differential scanning calorimetry (DSC) on the irradiated specimens, a large exotherm corresponding to material annealment was observed. Thus, a test procedure was developed to perform DSC and laser flashmore » analysis (LFA) to obtain the specific heat and thermal diffusivity of pre- and post-annealment specimens. This paper presents the thermal properties for three states of the MMC material: (1) unirradiated, (2) as-irradiated, and (3) irradiated and annealed. Microstructure-property relationships were obtained for the thermal conductivity. These relationships are useful for designing components from this material to operate in irradiation environments. Furthermore, the ability of this material to effectively conduct heat as a function of temperature, volume fraction Al 3Hf, radiation damage and annealing is assessed using the MOOSE suite of computational tools.« less

  6. Intrinsic Defect Ferromagnetism: The case of Hafnium Oxide

    NASA Astrophysics Data System (ADS)

    Das Pemmaraju, Chaitanya

    2005-03-01

    In view of the recent experimental reports of intrinsic ferromagnetism in Hafnium Oxide (HfO2) thin film systems ootnotetextM. Venkatesan, C. B. Fitzgerald, J. M. D. Coey Nature 430, 630 (2004) Brief Communications, we carried out first principles investigations to look for magnetic structure in HfO2 possibly brought about by the presence of small concentrations of intrinsic point defects. Ab initio electronic structure calculations using Density Functional Theory (DFT) show that isolated cation vacancy sites in HfO2 lead to the formation of high spin defect states which couple ferromagnetically to each other. Interestingly, these high spin states are observed in the low symmetry monoclinic and tetragonal phases while the highly symmetric cubic flourite phase exhibits a non-magnetic ground state. Detailed studies of the electronic structure of cation vacancies in the three crystalline phases of Hafnia show that symmetry leading to orbitally degenerate defect levels is not a pre-requsite for ferromagnetism and that the interplay between Kinetic, Coulomb and Exchange energy together with favourable coupling to the Crystalline environment can lead to high spin ferromagnetic ground states even in extreme low symmetry systems like monoclinic HfO2. These findings open up a much wider class of systems to the possibility of intrinsic defect ferromagnetism.

  7. Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Sarkar, Pranab Kumar; Roy, Asim

    2015-08-01

    The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

  8. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  9. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Joshi, Giri; Dahal, Tulashi; Chen, Shuo

    The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75-xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01 samples at eachmore » temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.« less

  10. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Joshi, Giri; Dahal, Tulashi; Chen, Shuo

    The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf 0.75-xTi xZr 0.25NiSn 0.99Sb 0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf 0.5Zr 0.25Ti 0.25NiSn 0.99Sb 0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. TheZT values below 500 °C of hot pressed Hf 0.5Zr 0.25Ti 0.25NiSn 0.99Sb 0.01 samplesmore » are significantly higher than those of the same way prepared Hf 0.75Zr 0.25NiSn 0.99Sb 0.01samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.« less

  11. Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

    2018-01-01

    Low concentrations (<1 at%) of hafnium doped into diamond-like thin films (Hf-DLC) were deposited on 316L stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

  12. Platinum and palladium incorporation into phosphate/viologen-phosphonates of zirconium and hafnium: synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Dokoutchaev, Alexandre; Krishnan, Venkatesan V.; Thompson, Mark E.; Balasubramanian, Mahalingam

    1998-10-01

    We have continued previous efforts to synthesize and characterize a microporous metal phosphate/viologen-phosphonate compound, [(ZrF) 2(PO 4)(O 3PCH 2CH 2-4,4'-bipyridinium-CH 2CH 2PO 3)] ṡF·2H 2O, ZrPO PV. A derivative of this material has been shown to be an efficient catalyst for the production of hydrogen peroxide from hydrogen and oxygen. This paper has two objectives—one is to optimize the synthetic routes leading to the preparation of MPO PV (M=zirconium or hafnium) and the second is to characterize MPO PV and the derivatives formed by Pt or Pd incorporation by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray powder diffraction (XRD), inductively coupled plasma-mass spectrometry (ICP-MS) and X-ray absorption fine structure analysis (XAFS). Powder XRD data have shown much higher crystallinity in MPO PV samples prepared by hydrothermal methods than those prepared by reflux methods. In the hydrothermal synthesis, the amount of mineralizer (HF) present controlled the crystallite size (as determined from TEM micrographs). The larger the quantity of HF in the bomb, the larger the size of the crystals but the lower the yield of the MPO PV material. Crystal sizes of about 2.5 μm in length and 0.15 μm in diameter have been made with very large quantities of HF as mineralizer (10 times the required stoichiometric amount). Ion exchange of the material by PdCl 42- has resulted in the incorporation of the PdCl 42- ions in place of X - in the material. This has been confirmed by XAFS studies that demonstrate the oxidation state of Pd is 2+ and show four Cl atoms bound to Pd. Upon reduction it has been confirmed (by XAFS) that the palladium exists as metal with oxidation state of zero. Ion exchange by PdCl 42- and PtCl 42- and subsequent reduction of the material suspension by hydrogen result in the formation of separate Pt and Pd colloids in the close vicinity of the crystallites. TEM micrographs show clearly that the Pt metal obtained after reduction forms much smaller particles in comparison to Pd. These exchanged and reduced materials have also been investigated as catalysts for production of hydrogen peroxide in mixed acetone/water medium. The production of hydrogen peroxide is enhanced by increasing amounts of Pd in the catalyst. Hydrogen peroxide yields are the highest for catalysts containing only Pd as opposed to a mixture of Pt and Pd.

  13. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  14. 40 CFR 471.91 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 107 TSS 364 173 pH (1) (1) 1 Within the range of 7.5 to 10.0 at all times. (j) Alkaline cleaning spent... mg/off-kg (pounds per million off-pounds) of zirconium-hafnium alkaline cleaned Chromium 0.704 0.288... 31.2 pH (1) (1) 1 Within the range of 7.5 to 10.0 at all times. (k) Alkaline cleaning rinse. Subpart...

  15. Creep and Fatigue Interaction Characteristics of PWA1484

    DTIC Science & Technology

    2009-03-01

    Tungsten) , 5.6% Al (aluminum) , 9% Ta (tantalum) , 3% Re (rhenium) , .1% Hf (hafnium) , and 59.3% Ni (nickel) by weight [1]. The alloy was invented...Work by Hael Mughrabi sought to determine the effect that the rafting behavior of the gamma prime precipitates had on the creep performance of...inclusions and in-homogeneities in 1961 [6]. Mughrabi further states that there is a tensile stress present in the gamma prime phase and a compressive

  16. 40 CFR 471.92 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14.1 6.26 (e... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium heat treated Chromium 0.015... Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20 Fluoride 20.3 8.98 (i) Surface...

  17. 40 CFR 471.92 - Effluent limitations representing the degree of effluent reduction attainable by the application...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Chromium 0.104 0.043 Cyanide 0.069 0.029 Nickel 0.455 0.301 Ammonia 31.6 13.9 Fluoride 14.1 6.26 (e... monthly average mg/off-kg (pounds per million off-pounds) of zirconium-hafnium heat treated Chromium 0.015... Chromium 0.150 0.061 Cyanide 0.099 0.041 Nickel 0.653 0.432 Ammonia 45.3 20 Fluoride 20.3 8.98 (i) Surface...

  18. Low-Voltage Electrowetting on a Lipid Bilayer Formed on Hafnium Oxide

    DTIC Science & Technology

    2011-06-01

    currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 2. REPORT TYPE 3. DATES...exceeding 10 V [9-10]. Here we report the development of electrowetting systems that do not contain solid organic dielectrics such as fluoropolymers, but...and the effective thickness ( T 𔃺 : :) of the bilayer in response to applied voltage are plotted in Fig. 3(b). The capacitance per area increased with

  19. METAL PHTHALOCYANINES

    DOEpatents

    Frigerio, N.A.

    1962-03-27

    A process is given for preparing heavy metal phthalocyanines, sulfonated or not. The process comprises mixing an inorganic metal salt with dimethyl formamide or methyl sulfoxide; separating the metal complex formed from the solution; mixing the complex with an equimolar amount of sodium, potassium, lithium, magnesium, or beryllium sulfonated or unsulfonated phthalocyanine whereby heavy-metal phthalocyanine crystals are formed; and separating the crystals from the solution. Uranyl, thorium, lead, hafnium, and lanthanide rare earth phthalocyanines can be produced by the process. (AEC)

  20. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    DTIC Science & Technology

    2014-09-01

    sputter-deposition. A large band gap coupled with low absorption provide optical transparency over a broad range in the electromagnetic spectrum; HfO2...k) in the middle of the visible spec- trum, and C influences n(k) to a greater extent in shorter wave - lengths [31]. Note that this principle behind...Approved for publicnanocrystalline HfO2 films crystallize in monoclinic structure. Fur - thermore, increasing Ts results in improved structural order and

  1. Defeating Hard and Deeply Buried Targets in 2035

    DTIC Science & Technology

    2012-02-15

    Hafnium Carbide 12.2 33 722 120 3000 Tantalum 16.4 24 680 113 3017 Tantalum Carbide 14.3 28 746 124 3880 Tungsten 19.3 21 550 92 3422 Tungsten ...lethality. Concepts for employing the weapon included “vertical delivery with the bomb detonated at or just outside portal, skip bomb with short fuse (first...or second contact), skip bomb with long fuse (penetrate door, maximize distance down adits [underground facility entrances or passages]), and

  2. Cathodoluminescence of Irradiated Hafnium Dioxide

    DTIC Science & Technology

    2011-03-01

    d allows for a smaller A for a given C, but the insulator can only become so thin before tunneling occurs, which causes high power consumption and... coefficient is given by 4 Inπα λ = , (2.7) where λ is the vacuum wavelength of the light [11]. Luminescence is the general term for the...between localized states in the band tails, while the 4.2 eV feature is excited due to the interband absorption. Strzhemechny et al., 2008, studied

  3. Three dimensional graphene transistor for ultra-sensitive pH sensing directly in biological media.

    PubMed

    Ameri, Shideh Kabiri; Singh, Pramod K; Sonkusale, Sameer R

    2016-08-31

    In this work, pH sensing directly in biological media using three dimensional liquid gated graphene transistors is presented. The sensor is made of suspended network of graphene coated all around with thin layer of hafnium oxide (HfO2), showing high sensitivity and sensing beyond the Debye-screening limit. The performance of the pH sensor is validated by measuring the pH of isotonic buffered, Dulbecco's phosphate buffered saline (DPBS) solution, and of blood serum derived from Sprague-Dawley rat. The pH sensor shows high sensitivity of 71 ± 7 mV/pH even in high ionic strength media with molarities as high as 289 ± 1 mM. High sensitivity of this device is owing to suspension of three dimensional graphene in electrolyte which provides all around liquid gating of graphene, leading to higher electrostatic coupling efficiency of electrolyte to the channel and higher gating control of transistor channel by ions in the electrolyte. Coating graphene with hafnium oxide film (HfO2) provides binding sites for hydrogen ions, which results in higher sensitivity and sensing beyond the Debye-screening limit. The 3D graphene transistor offers the possibility of real-time pH measurement in biological media without the need for desaltation or sample preparation. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. Mechanical Testing of Ultra-High Temperature Ceramics at 1500 C in Air - Development of an Experimental Facility and Test Method

    DTIC Science & Technology

    2015-03-26

    SiC. TEM micrograph courtesy of R. S . Hay (AFRL/RXCC). ...................33 Fig. 5. Schematic of HfB2-based UHTC test specimen...the early work performed by the U. S . Air force and NASA was the identification of hafnium diboride (HfB2) and zirconium diboride (ZrB2) as good high...sintering, reactive routes, and spark plasma sintering. ~ 14 ~ Because diborides exhibit strong covalent bonding and low self-diffusion, high

  5. Advanced High Temperature Coating Systems Beyond Current State of the Art Systems.

    DTIC Science & Technology

    1986-04-15

    cobalt and chromium rich oxides. The A120 3 scales developed on the NiCrAl and CoCrAI alloys doped with yttrium or hafnium were relatively flat and...third element such as Cr is present in the alloy. Chromium acts as a getter which prevents oxygen from entering the alloy, so A12 0 3 tends to develop...or Cr doped alumina. Yttrium is isovalent with aluminum so it is not expected to alter the intrinsic defect structure of alumina, however

  6. Metal alloy coatings and methods for applying

    DOEpatents

    Merz, Martin D.; Knoll, Robert W.

    1991-01-01

    A method of coating a substrate comprises plasma spraying a prealloyed feed powder onto a substrate, where the prealloyed feed powder comprises a significant amount of an alloy of stainless steel and at least one refractory element selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The plasma spraying of such a feed powder is conducted in an oxygen containing atmosphere and forms an adherent, corrosion resistant, and substantially homogenous metallic refractory alloy coating on the substrate.

  7. Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

    DTIC Science & Technology

    2012-02-21

    passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

  8. High Temperature Monotonic and Cyclic Deformation in a Directionally Solidified Nickel-Base Superalloy.

    DTIC Science & Technology

    1986-05-01

    was conducted in air, using a SATEC Systems computer-controlled servohydraulic testing machine. This machine uses a minicomputer (Digital PDP 11/34...overall test program) was run. This test was performed using a feature of the SATEC machine called combinatorial feedback, which allowed a user-defined...Rn) l/T + (in Es /A)/n (4.3) Q can be calculated from 0*: b Q=n (4.4) Creep data for DS MAR-M246, containing no Hafnium, from Reference 99 was used to

  9. Effect of Atomic Layer Deposition on the Quality Factor of Silicon Nanobeam Cavities

    DTIC Science & Technology

    2012-01-25

    Additionally, tuning of 2D photonic crystal systems has been shown using atomic layer deposition (ALD) of hafnium oxide [5] and titanium oxide [6] and plasma...μm. This region of the fiber is then carefully positioned across the nanobeam cavity. A tunable narrowband laser source is coupled into one end of the...fiber, and the trans- mitted power is detected at the other end. As the laser source is tuned into resonance with the cavity, some of the power is

  10. Fiber-Reinforced Superalloys For Rocket Engines

    NASA Technical Reports Server (NTRS)

    Lewis, Jack R.; Yuen, Jim L.; Petrasek, Donald W.; Stephens, Joseph R.

    1990-01-01

    Report discusses experimental studies of fiber-reinforced superalloy (FRS) composite materials for use in turbine blades in rocket engines. Intended to withstand extreme conditions of high temperature, thermal shock, atmospheres containing hydrogen, high cycle fatigue loading, and thermal fatigue, which tax capabilities of even most-advanced current blade material - directionally-solidified, hafnium-modified MAR M-246 {MAR M-246 (Hf) (DS)}. FRS composites attractive combination of properties for use in turbopump blades of advanced rocket engines at temperatures from 870 to 1,100 degrees C.

  11. Hardness behavior of binary and ternary niobium alloys at 77 and 300 K

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1974-01-01

    The effects of alloy additions of zirconium, hafnium, molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium, and iridium on the hardness of niobium was determined. Both binary and ternary alloys were investigated by means of hardness tests at 77 K and 300 K. Results showed that atomic size misfit plays a dominant role in controlling hardness of binary niobium alloys. Alloy softening, which occurred at dilute solute additions, is most likely due to an extrinsic mechanism involving interaction between solute elements and interstitial impurities.

  12. Kinetic and mechanistic aspects of propene oligomerization with ionic organozirconium and -hafnium compounds: Crystal structures of [Cp* {sub 2}MMe(THT)]{sup +}[BPh{sub 4}]{sup {minus}} (M=Zr, Hf)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Eshuis, J.J.W.; Tan, Y.Y.; Meetsma, A.

    1992-01-01

    In N,N-dimethylaniline the ionic complexes [Cp{sup *}{sub 2}MMe(THT)]{sup +}[BPh{sub 4}]{sup {minus}}(M=Zr,Hf) oligomerize propene to low molecular weight oligomers. At room temperature for M = Zr a rather broad molecular weight distribution is obtained (C{sub 6} to C{sub 24}), whereas for M = Hf only one dimer (4-methyl-1-pentene) and one trimer (4,6-dimethyl-1-heptene) are formed. With an increase in temperature the product composition shifts to lower molecular weights, but the specific formation of head-to-tail oligomers is retained. The oligomers are formed by {beta}-Me transfer from the growing oligopropene alkyl chain to the metal center. The molecular weight distributions of the oligomers producedmore » at temperature between 5 and 45 {degrees}C are satisfactorily described by the Flory-Schulz theory. This allows the calculation of ratios of rate coefficients for propagation (k{sub p}) and termination (k{sub t}). Inactivation of the catalysts is caused by two different mechanisms. At room temperature allylic C-H activation of monomer and isobutene (formed by a minor {beta}-H transfer termination) gives inactive (meth) allyl compounds, [Cp{sup *} {sub 2}M({eta}{sup 3}-C{sub 3}H{sub 5})]{sup +} and [Cp{sup *}{sub 2}M({eta}{sup 3}-C{sub 4}H{sub 7})]{sup +} (M = Zr, Hf). At elevated temperatures (>45 {degrees}C) catalytically inactive zwitterionic complexes Cp{sup *}{sub M}{sup +}-m-C{sub 6}H{sub 4}-BPh{sub 3}{sup {minus}}(M = Zr, Hf) are formed through aromatic C-H activation. Reactivation of the inactive (meth)allyl complexes can be achieved by addition of hydrogen to the oligomerization mixtures. 38 refs., 4 figs., 7 tabs.« less

  13. Characteristics of laser produced plasmas of hafnium and tantalum in the 1-7 nm region

    NASA Astrophysics Data System (ADS)

    Li, Bowen; Otsuka, Takamitsu; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry; Hara, Hiroyuki; Arai, Goki; Tamura, Toshiki; Ono, Yuichi; Dinh, Thanh-Hung; Higashiguchi, Takeshi

    2017-11-01

    Soft X-ray (SXR) spectra from hafnium and tantalum laser produced plasmas were recorded in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 170 ps and 10 ns, respectively, operating at a range of power densities. The maximum focused peak power density was 2. 3 × 1014 W cm-2 for 170 ps pulses and 1. 8 × 1012 W cm-2 for 10 ns pulses, respectively. Two intense quasicontinuous intensity bands resulting from n = 4 - n = 4 and n = 4 - n = 5 unresolved transition arrays (UTAs) dominate both sets of experimental spectra. Comparison with calculations performed with the Cowan suite of atomic structure codes as well as consideration of previous experimental and theoretical results aided identification of the most prominent features in the spectra. For the 10 ns spectrum, the highest ion stage that could be identified from the n = 4 - n = 5 arrays were lower than silver-like Hf25+ and Ta26+ (which has a 4 d 104 f ground configuration) indicating that the plasma temperature attained was too low to produce ions with an outermost 4 d subshell, while for the 170 ps plasmas the presence of significantly higher stages was deduced and lines due to 4 d-5 p transitions were clearly evident. Furthermore, we show an enhancement of emission from tantalum using dual laser irradiation, and the effect of pre-pulse durations and delay times between two pulses are demonstrated.

  14. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

    PubMed Central

    Lu, Qifeng; Mu, Yifei; Roberts, Joseph W.; Althobaiti, Mohammed; Dhanak, Vinod R.; Wu, Jingjin; Zhao, Chun; Zhao, Ce Zhou; Zhang, Qian; Yang, Li; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2015-01-01

    In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS) indicates the formation of GeOx and germanate at the interface. X-ray diffraction (XRD) indicates that all the thin films remain amorphous for this deposition condition. The surface roughness was analyzed using an atomic force microscope (AFM) for each sample. The electrical characterization shows very low hysteresis between ramp up and ramp down of the Capacitance-Voltage (CV) and the curves are indicative of low trap densities. A relatively large leakage current is observed and the lowest leakage current among the four samples is about 1 mA/cm2 at a bias of 0.5 V for a Ti0.9Hf0.1O2 sample. The large leakage current is partially attributed to the deterioration of the interface between Ge and TixHf1–xO2 caused by the oxidation source from HfO2. Consideration of the energy band diagrams for the different materials systems also provides a possible explanation for the observed leakage current behavior. PMID:28793705

  15. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  16. Hafnium-doped hydroxyapatite nanoparticles with ionizing radiation for lung cancer treatment.

    PubMed

    Chen, Min-Hua; Hanagata, Nobutaka; Ikoma, Toshiyuki; Huang, Jian-Yuan; Li, Keng-Yuan; Lin, Chun-Pin; Lin, Feng-Huei

    2016-06-01

    Recently, photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. However, the optical approach of PDT is limited by tissue penetration depth of visible light. In this study, we propose that a ROS-enhanced nanoparticle, hafnium-doped hydroxyapatite (Hf:HAp), which is a material to yield large quantities of ROS inside the cells when the nanoparticles are bombarded with high penetrating power of ionizing radiation. Hf:HAp nanoparticles are generated by wet chemical precipitation with total doping concentration of 15mol% Hf(4+) relative to Ca(2+) in HAp host material. The results show that the HAp particles could be successfully doped with Hf ions, resulted in the formation of nano-sized rod-like shape and with pH-dependent solubility. The impact of ionizing radiation on Hf:HAp nanoparticles is assessed by using in-vitro and in-vivo model using A549 cell line. The 2',7'-dichlorofluorescein diacetate (DCFH-DA) results reveal that after being exposed to gamma rays, Hf:HAp could significantly lead to the formation of ROS in cells. Both cell viability (WST-1) and cytotoxicity (LDH) assay show the consistent results that A549 lung cancer cell lines are damaged with changes in the cells' ROS level. The in-vivo studies further demonstrate that the tumor growth is inhibited owing to the cells apoptosis when Hf:HAp nanoparticles are bombarded with ionizing radiation. This finding offer a new therapeutic method of interacting with ionizing radiation and demonstrate the potential of Hf:HAp nanoparticles in tumor treatment, such as being used in a palliative treatment after lung surgical procedure. Photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. Unfortunately, the approach of PDT is usually limited to the treatment of systemic disease and deeper tumor, due to the limited tissue penetration depth of visible light (620-690nm). Here we report a ROS-enhanced nanoparticle, hafnium-doped hydroxyapatite (Hf:HAp), which can trigger ROS when particles are irradiated with high penetrating power of ionizing radiation. The present study provides quantitative data relating ROS generation and the therapeutic effect of Hf:HAp nanoparticles in lung cancer cells. As such, this material has opened an innovative window for deeper tumor and systemic disease treatment. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  17. Near Net-Shape, Ultra High Melting, Erosion Resistant Carbide/Metal Composites with Tailored Fibrillar Microstructures via the Displacive Compensation of Porosity Process

    DTIC Science & Technology

    2006-11-26

    vapor species, formed over tungsten trioxide powder, is 1.25xl0Ŗ atm at 1400°C and 1 atm total pressure (assuming an oxygen partial pressure greater...with CO(g). ■19- These hollow tungsten fibers were then carburized via reaction with CO(g) to generate the polycrystalline WC-based fibers shown in...of tungsten carbide via reaction with a hafnium-copper melt," Ada Mater., 57(13), 3924-3931 (2009).) The kinetic mechanism of incongruent reduction

  18. The distribution of zirconium and hafnium in terrestrial rocks, meteorites and the moon

    NASA Technical Reports Server (NTRS)

    Ehmann, W. D.; Chyi, L. L.; Garg, A. N.; Ali, M. Z.

    1979-01-01

    It is shown that Zr and Hf are not always fractionated in terrestrial igneous differentiation or regional metamorphism. Data do support a Zr-Hf fractionation in the differentiation of the alkali olivine magma at St. Helena Island. A strong Zr-Hf fractionation exists among lunar rocks and minerals. Ilmenite is an excellent concentrator of Zr and Hf and always exhibits high Zr/Hf ratios. Chondritic meteorites exhibit rather uniform Zr abundances and Zr/Hf ratios but a distinct Zr-Hf fractionation is observed among the eucrite and diogenite achondrites.

  19. All-alkoxide synthesis of strontium-containing metal oxides

    DOEpatents

    Boyle, Timothy J.

    2001-01-01

    A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

  20. Materials Substitution and Recycling. Proceedings of the Meeting of the Structures and Materials Panel (57th) Held at Vimeiro, Portugal on 14-19 October 1983.

    DTIC Science & Technology

    1984-04-01

    34Substitution et Recyclage die Mattrisux Hautes Tinpiraturic- Ar. r T~I __ T-71 01t -Jo PREFACE IM Rdeence SESSION I - INTRODUCTION THE NATURE OF THE...hafnium, manganese, niobium, titanium, tungsten and vanadium are all considered to a degree a! risk. 1. INTRODUCTION Much simplistic polemic has...action is improved scrap separation at all steps of the material cycle. The influence of no-scrap-technologies is discussed. 1. INTRODUCTION The

  1. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

    PubMed

    Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2003-05-23

    We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

  2. X-ray detection capabilities of plastic scintillators incorporated with hafnium oxide nanoparticles surface-modified with phenyl propionic acid

    NASA Astrophysics Data System (ADS)

    Hiyama, Fumiyuki; Noguchi, Takio; Koshimizu, Masanori; Kishimoto, Shunji; Haruki, Rie; Nishikido, Fumihiko; Yanagida, Takayuki; Fujimoto, Yutaka; Aida, Tsutomu; Takami, Seiichi; Adschiri, Tadafumi; Asai, Keisuke

    2018-01-01

    We synthesized plastic scintillators incorporated with HfO2 nanoparticles as detectors for X-ray synchrotron radiation. Nanoparticles with sizes of less than 10 nm were synthesized with the subcritical hydrothermal method. The detection efficiency of high-energy X-ray photons improved by up to 3.3 times because of the addition of the nanoparticles. Nanosecond time resolution was successfully achieved for all the scintillators. These results indicate that this method is applicable for the preparation of plastic scintillators to detect X-ray synchrotron radiation.

  3. Thin Films of Reduced Hafnium Oxide with Excess Carbon for High-Temperature Oxidation Protection

    DTIC Science & Technology

    2010-02-01

    Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein, B . H. Lee, and J. C. Lee, "Spectroscopic Ellipsometry Characterization of High- k Dielectric Hf02...34 Canadian Journal of Chemistry, 61 850-55 (1983). I6D. B . Chrisey and G. K . Hubler (Eds.), "Pulsed Laser Deposition of Thin Films." John Wiley...smaller than b rim. It was shown that high carbon content in the films inhibits crystaliization of HtO( at temperatures at least up to 333 C. Study ot

  4. Infrared Optics Hot Pressed From Fluoride Glass

    NASA Astrophysics Data System (ADS)

    Turk, R. R.

    1982-02-01

    Optical figured surfaces were formed directly by hot pressing a fluoride glass in a closed die of tungsten carbide. Microduplication of the surface finish was also obtained. A glass composed of the fluorides of barium, thorium and zirconium or hafnium, and transmitting into the infrared out to 8 microns was press formed into an optical flat above its softening temperature and below its crystallization temperature. Also, small vitreous pieces were consolidated into larger pieces under moderate heat and pressure, thus avoiding the crystallization which occurs in large batches cooled from the melt.

  5. Role of electron concentration in softening and hardening of ternary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1975-01-01

    Effects of various combinations of hafnium, tantalum, rhenium, osmium, iridium, and platinum in ternary molybdenum alloys on alloy softening and hardening were determined. Hardness tests were conducted at four test temperatures over the temperature range 77 to 411 K. Results showed that hardness data for ternary molybdenum alloys could be correlated with anticipated results from binary data based upon expressions involving the number of s and d electrons contributed by the solute elements. The correlation indicated that electron concentration plays a dominant role in controlling the hardness of ternary molybdenum alloys.

  6. Mass transfer in a 1370 C (2500 F) lithium thermal convection loop

    NASA Technical Reports Server (NTRS)

    Scheuermann, C. M.

    1974-01-01

    Experimental results from a test to evaluate interstitial element mass transfer effects on T-111, ASTAR 811C, and ASTAR 1211C after 5000 hours in flowing lithium at 1370 C (2500 F) are presented. No gross corrosion effects were observed. However, hafnium and nitrogen transfer to cooler regions within the loop were noted. Oxygen was in general removed from test specimens, but there was no evidence to indicate that it was a major factor in the mass transfer process. Carbon and hydrogen transfer were not detected.

  7. Steps Towards Large Scale Production of High-Spin Hafnium Isomers by Spallation Reactions

    DTIC Science & Technology

    2008-02-25

    and 22Na radionuclides are schematically shown in Fig. 6. The 511 keV γ–ray line correspond to the positron annihilation peak. A large Compton...The annihilation of the positron emitted following the β+–decay of 22Na leads to the 511 keV peak in the γ–ray spectra. Gamma–ray activity spectra...figure. Gamma–rays are labeled with the radionuclide to which they belong. The 511 keV γ–ray line is the positron annihilation peak and correspond to

  8. Assessing the impact of atomic oxygen in the damage threshold and stress of Hafnia films grown by ion beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Patel, D.; Wang, Y.; Larotonda, M.; Lovewell, J.; Jensen, J.; Hsiao, K. J.; Krous, E.; Rocca, J. J.; Menoni, C. S.; Tomasel, F.; Kholi, S.; McCurdy, P.

    2007-01-01

    Hafnium oxide (HfO II) is undoubtedly one of the most desirable high-index optical coatings for high power laser applications. One of the key goals in the fabrication of oxide films with high Laser Induced Damage Threshold (LIDT) is to minimize the number of film imperfections, in particular stoichiometric defects. For HfO II films deposited by ion beam (reactive) sputtering (IBS) of a hafnium metal target, stoichiometry is controlled by the injection of molecular oxygen, either close to the substrate or mixed with the sputtering gas or some other combination. Good stoichiometry is important to reduce the density of unoxidized particles buried in the coatings, which affect the LIDT. This work evaluates the potential advantages of using pre-activation of oxygen in the IBS of HfO II, with special emphasis on its impact on LIDT and film stress. For the experiments, oxygen was activated by an independent plasma source and then introduced into a commercial IBS chamber. The optical properties of the films were characterized using spectrophotometry and ellipsometry. Their structural quality and composition were determined from x-ray diffraction and x-ray photoelectron emission spectroscopy. The stress was determined from interferometer measurements. For optimized conditions, 2.5 J/cm2 LIDT was measured on HfO II films at λ=800 nm with 1 ps and 25 mJ pulses from a chirped amplification Ti:Sapphire laser. In the range of oxygen variations under consideration the effects on LIDT are shown to be minimal.

  9. Technical Note: A simulation study on the feasibility of radiotherapy dose enhancement with calcium tungstate and hafnium oxide nano- and microparticles.

    PubMed

    Sherck, Nicholas J; Won, You-Yeon

    2017-12-01

    To assess the radiotherapy dose enhancement (RDE) potential of calcium tungstate (CaWO 4 ) and hafnium oxide (HfO 2 ) nano- and microparticles (NPs). A Monte Carlo simulation study was conducted to gauge their respective RDE potentials relative to that of the broadly studied gold (Au) NP. The study was warranted due to the promising clinical and preclinical studies involving both CaWO 4 and HfO 2 NPs as RDE agents in the treatment of various types of cancers. The study provides a baseline RDE to which future experimental RDE trends can be compared to. All three materials were investigated in silico with the software Penetration and Energy Loss of Positrons and Electrons (PENELOPE 2014) developed by Francesc Salvat and distributed in the United States by the Radiation Safety Information Computational Center (RSICC) at Oak Ridge National Laboratory. The work utilizes the extensively studied Au NP as the "gold standard" for a baseline. The key metric used in the evaluation of the materials was the local dose enhancement factor (DEF loc ). An additional metric used, termed the relative enhancement ratio (RER), evaluates material performance at the same mass concentrations. The results of the study indicate that Au has the strongest RDE potential using the DEF loc metric. HfO 2 and CaWO 4 both underperformed relative to Au with lower DEF loc of 2-3 × and 4-100 ×, respectively. The computational investigation predicts the RDE performance ranking to be: Au > HfO 2 > CaWO 4 . © 2017 American Association of Physicists in Medicine.

  10. Interplay between ferroelectric and resistive switching in doped crystalline HfO2

    NASA Astrophysics Data System (ADS)

    Max, Benjamin; Pešić, Milan; Slesazeck, Stefan; Mikolajick, Thomas

    2018-04-01

    Hafnium oxide is widely used for resistive switching devices, and recently it has been discovered that ferroelectricity can be established in (un-)doped hafnium oxide as well. Previous studies showed that both switching mechanisms are influenced by oxygen vacancies. For resistive switching, typically amorphous oxide layers with an asymmetric electrode configuration are used to create a gradient of oxygen vacancies. On the other hand, ferroelectric switching is performed by having symmetric electrodes and requires crystalline structures. The coexistence of both effects has recently been demonstrated. In this work, a detailed analysis of the reversible interplay of both switching mechanisms within a single capacitor cell is investigated. First, ferroelectric switching cycles were applied in order to drive the sample into the fatigued stage characterized by increased concentration of oxygen vacancies in the oxide layer. Afterwards, a forming step that is typical for the resistive switching devices was utilized to achieve a soft breakdown. In the next step, twofold alternation between the high and low resistance state is applied to demonstrate the resistive switching behavior of the device. Having the sample in the high resistance state with a ruptured filament, ferroelectric switching behavior is again shown within the same stack. Interestingly, the same endurance as before was observed without a hard breakdown of the device. Therefore, an effective sequence of ferroelectric—resistive—ferroelectric switching is realized. Additionally, the dependence of the forming, set, and reset voltage on the ferroelectric cycling stage (pristine, woken-up and fatigued) is analyzed giving insight into the physical device operation.

  11. Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

    2018-02-01

    Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

  12. FORMING PROTECTIVE FILMS ON METAL

    DOEpatents

    Gurinsky, D.H.; Kammerer, O.F.; Sadofsky, J.; Weeks, J.R.

    1958-12-16

    Methods are described of inhibiting the corrosion of ferrous metal by contact with heavy liquid metals such as bismuth and gallium at temperatures above 500 icient laborato C generally by bringing nltrogen and either the metal zirconium, hafnium, or titanium into reactlve contact with the ferrous metal to form a thin adherent layer of the nitride of the metal and thereafter maintaining a fractional percentage of the metal absorbed in the heavy liquid metal in contact with the ferrous metal container. The general purpose for uslng such high boiling liquid metals in ferrous contalners would be as heat transfer agents in liquid-metal-fueled nuclear reactors.

  13. Simplified thermochemistry of oxygen in lithium and sodium for liquid metal cooling systems

    NASA Technical Reports Server (NTRS)

    Tower, L. K.

    1972-01-01

    Plots of oxygen chemical potential against composition of lithium-oxygen solutions and sodium-oxygen solutions for a range of temperature were constructed. For each liquid metal two such plots were prepared. For one plot ideal solution behavior was assumed. For the other plot, existing solubility limit data for oxygen in the liquid metal were used to determine a first-order term for departure from ideality. The use of the plots in evaluating the oxygen gettering capability of refractory metals in liquid metal cooling systems is illustrated by a simple example involving lithium, oxygen, and hafnium.

  14. Development of Matrix Microstructures in UHTC Composites

    NASA Technical Reports Server (NTRS)

    Johnson, Sylvia; Stackpoole, Margaret; Gusman, Michael

    2012-01-01

    One of the major issues hindering the use of ultra high temperature ceramics for aerospace applications is low fracture toughness. There is considerable interest in developing fiber-reinforced composites to improve fracture toughness. Considerable knowledge has been gained in controlling and improving the microstructure of monolithic UHTCs, and this paper addresses the question of transferring that knowledge to composites. Some model composites have been made and the microstructures of the matrix developed has been explored and compared to the microstructure of monolithic materials in the hafnium diboride/silicon carbide family. Both 2D and 3D weaves have been impregnated and processed.

  15. Alloy hardening and softening in binary molybdenum alloys as related to electron concentration

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of hafnium, tantalum, tungsten, rhenium, osmium, iridium, and platinum on hardness of molybdenum. Special emphasis was placed on alloy softening in these binary molybdenum alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to molybdenum, while those elements having an equal number or fewer s+d electrons that molybdenum failed to produce alloy softening. Alloy softening and alloy hardening can be correlated with the difference in number of s+d electrons of the solute element and molybdenum.

  16. Mixed oxide solid solutions

    DOEpatents

    Magno, Scott; Wang, Ruiping; Derouane, Eric

    2003-01-01

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  17. PROCESS OF REMOVING PLUTONIUM VALUES FROM SOLUTION WITH GROUP IVB METAL PHOSPHO-SILICATE COMPOSITIONS

    DOEpatents

    Russell, E.R.; Adamson, A.W.; Schubert, J.; Boyd, G.E.

    1957-10-29

    A process for separating plutonium values from aqueous solutions which contain the plutonium in minute concentrations is described. These values can be removed from an aqueous solution by taking an aqueous solution containing a salt of zirconium, titanium, hafnium or thorium, adding an aqueous solution of silicate and phosphoric acid anions to the metal salt solution, and separating, washing and drying the precipitate which forms when the two solutions are mixed. The aqueous plutonium containing solution is then acidified and passed over the above described precipi-tate causing the plutonium values to be adsorbed by the precipitate.

  18. Silicon/HfO{sub 2} interface: Effects of gamma irradiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Maurya, Savita

    2016-05-23

    Quality of MOS devices is a strong function of substrate and oxide interface. In this work we have studied how gamma photon irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide deposited on silicon wafer. CV and GV measurements have been done for pristine and irradiated samples to quantify the effect of gamma photon irradiation. Gamma photon irradiation not only introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface but also induce phase change of oxide layer. Maximum oxide capacitances are affected by gamma photon irradiation.

  19. Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

    NASA Astrophysics Data System (ADS)

    Quevedo Lopez, Manuel Angel

    Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

  20. Oxidation Characterization of Hafnium-Based Ceramics Fabricated by Hot Pressing and Electric Field-Assisted Sintering

    NASA Technical Reports Server (NTRS)

    Gasch, Matt; Johnson, Sylvia; Marschall, Jochen

    2010-01-01

    Ceramic borides, such as hafnium diboride (HfB2) and zirconium diboride (ZrB2), are members of a family of materials with extremely high melting temperatures referred to as Ultra High Temperature Ceramics (UHTCs). UHTCs constitute a class of promising materials for use in high temperature applications, such as sharp leading edges on future-generation hypersonic flight vehicles, because of their high melting points. The controlled development of microstructure has become important to the processing of UHTCs, with the prospect of improving their mechanical and thermal properties. The improved oxidation resistance of HfB2 has also become important if this material is to be successfully used at temperatures above 2000 C. Furthermore, the use of UHTCs on the leading edges of vehicles traveling at hypersonic speeds will mean exposure to a mixed oxidation environment comprised of both molecular and atomic oxygen. The current study has investigated the high-temperature oxidation behavior of HfB2-based materials in a pure O2 environment, as well as in environments containing different levels of dissociated oxygen (O/O2). Materials were processed by two techniques: conventional hot pressing (HP) and electric field-assisted sintering (FAS). Their oxidation behavior was evaluated in both a tube furnace at 1250 C for 3 hours and in a simulated re-entry environment in the Advanced Heating Facility (AHF) arcjet at NASA Ames Research Center, during a 10-minute exposure to a cold wall heat flux of 250W/sq cm and stagnation pressure of 0.1-0.2 atm. The microstructure of the different materials was characterized before and after oxidation using scanning electron microscopy (SEM).

  1. Methods for Melting Temperature Calculation

    NASA Astrophysics Data System (ADS)

    Hong, Qi-Jun

    Melting temperature calculation has important applications in the theoretical study of phase diagrams and computational materials screenings. In this thesis, we present two new methods, i.e., the improved Widom's particle insertion method and the small-cell coexistence method, which we developed in order to capture melting temperatures both accurately and quickly. We propose a scheme that drastically improves the efficiency of Widom's particle insertion method by efficiently sampling cavities while calculating the integrals providing the chemical potentials of a physical system. This idea enables us to calculate chemical potentials of liquids directly from first-principles without the help of any reference system, which is necessary in the commonly used thermodynamic integration method. As an example, we apply our scheme, combined with the density functional formalism, to the calculation of the chemical potential of liquid copper. The calculated chemical potential is further used to locate the melting temperature. The calculated results closely agree with experiments. We propose the small-cell coexistence method based on the statistical analysis of small-size coexistence MD simulations. It eliminates the risk of a metastable superheated solid in the fast-heating method, while also significantly reducing the computer cost relative to the traditional large-scale coexistence method. Using empirical potentials, we validate the method and systematically study the finite-size effect on the calculated melting points. The method converges to the exact result in the limit of a large system size. An accuracy within 100 K in melting temperature is usually achieved when the simulation contains more than 100 atoms. DFT examples of Tantalum, high-pressure Sodium, and ionic material NaCl are shown to demonstrate the accuracy and flexibility of the method in its practical applications. The method serves as a promising approach for large-scale automated material screening in which the melting temperature is a design criterion. We present in detail two examples of refractory materials. First, we demonstrate how key material properties that provide guidance in the design of refractory materials can be accurately determined via ab initio thermodynamic calculations in conjunction with experimental techniques based on synchrotron X-ray diffraction and thermal analysis under laser-heated aerodynamic levitation. The properties considered include melting point, heat of fusion, heat capacity, thermal expansion coefficients, thermal stability, and sublattice disordering, as illustrated in a motivating example of lanthanum zirconate (La2Zr2O7). The close agreement with experiment in the known but structurally complex compound La2Zr 2O7 provides good indication that the computation methods described can be used within a computational screening framework to identify novel refractory materials. Second, we report an extensive investigation into the melting temperatures of the Hf-C and Hf-Ta-C systems using ab initio calculations. With melting points above 4000 K, hafnium carbide (HfC) and tantalum carbide (TaC) are among the most refractory binary compounds known to date. Their mixture, with a general formula TaxHf 1-xCy, is known to have a melting point of 4215 K at the composition Ta4HfC 5, which has long been considered as the highest melting temperature for any solid. Very few measurements of melting point in tantalum and hafnium carbides have been documented, because of the obvious experimental difficulties at extreme temperatures. The investigation lets us identify three major chemical factors that contribute to the high melting temperatures. Based on these three factors, we propose and explore a new class of materials, which, according to our ab initio calculations, may possess even higher melting temperatures than Ta-Hf-C. This example also demonstrates the feasibility of materials screening and discovery via ab initio calculations for the optimization of "higher-level" properties whose determination requires extensive sampling of atomic configuration space.

  2. Hydrogen doping in HfO{sub 2} resistance change random access memory

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

    2016-01-25

    The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

  3. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    NASA Astrophysics Data System (ADS)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  4. PLUTONIUM ALLOYS CONTAINING CONTROLLED AMOUNTS OF PLUTONIUM ALLOTROPES OBTAINED BY APPLICATION OF HIGH PRESSURES

    DOEpatents

    Elliott, R.O.; Gschneidner, K.A. Jr.

    1962-07-10

    A method of making stabilized plutonium alloys which are free of voids and cracks and have a controlled amount of plutonium allotropes is described. The steps include adding at least 4.5 at.% of hafnium, indium, or erbium to the melted plutonium metal, homogenizing the resulting alloy at a temperature of 450 deg C, cooling to room temperature, and subjecting the alloy to a pressure which produces a rapid increase in density with a negligible increase in pressure. The pressure required to cause this rapid change in density or transformation ranges from about 800 to 2400 atmospheres, and is dependent on the alloying element. (AEC)

  5. Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

    2007-12-01

    Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

  6. Thermal expansion method for lining tantalum alloy tubing with tungsten

    NASA Technical Reports Server (NTRS)

    Watson, G. K.; Whittenberger, J. D.; Mattson, W. F.

    1973-01-01

    A differential-thermal expansion method was developed to line T-111 (tantalum - 8 percent tungsten - 2 percent hafnium) tubing with a tungsten diffusion barrier as part of a fuel element fabrication study for a space power nuclear reactor concept. This method uses a steel mandrel, which has a larger thermal expansion than T-111, to force the tungsten against the inside of the T-111 tube. Variables investigated include lining temperature, initial assembly gas size, and tube length. Linear integrity increased with increasing lining temperature and decreasing gap size. The method should have more general applicability where cylinders must be lined with a thin layer of a second material.

  7. Effects of Hafnium Additions on the Solidification Behavior of Directionally Solidified Superalloys.

    DTIC Science & Technology

    1981-10-01

    h t (3-1) : where R is the instantaneous rate and h is the transient height. This transient was computed ahead of time on an IBM 370 interactive...form of thermocouple EMF output vs. time, taken at various positions serve as input parameters for the TCTEMP deck for the IBM 370. In its present...iuDv oWIiCNA u 41 S~Q 0 01 0, 0 0 0 % 00 .0 C) 1 0o u- I 0 o0 N 0N Itp 0 0 oitoain3 iuOOJ~d aflOA oian WUOied awnlOA S 1241 - 5 .A - _ A A - S

  8. Bonded ultrasonic transducer and method for making

    DOEpatents

    Dixon, Raymond D.; Roe, Lawrence H.; Migliori, Albert

    1995-01-01

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

  9. Effect of solutes in binary columbium /Nb/ alloys on creep strength

    NASA Technical Reports Server (NTRS)

    Klein, M. J.; Metcalfe, A. G.

    1973-01-01

    The effect of seven different solutes in binary columbium (Nb) alloys on creep strength was determined from 1400 to 3400 F for solute concentrations to 20 at.%, using a new method of creep-strength measurement. The technique permits rapid determination of approximate creep strength over a large temperature span. All of the elements were found to increase the creep strength of columbium except tantalum. This element did not strengthen columbium until the concentration exceeded 10 at.%. Hafnium, zirconium, and vanadium strengthed columbium most at low temperatures and concentrations, whereas tungsten, molybdenum, and rhenium contributed more to creep strength at high temperatures and concentrations.

  10. Magmatic and Crustal Differentiation History of Granitic Rocks from Hf-O Isotopes in Zircon

    NASA Astrophysics Data System (ADS)

    Kemp, , A. I. S.; Hawkesworth, , C. J.; Foster, , G. L.; Paterson, , B. A.; Woodhead, , J. D.; Hergt, , J. M.; Gray, , C. M.; Whitehouse, M. J.

    2007-02-01

    Granitic plutonism is the principal agent of crustal differentiation, but linking granite emplacement to crust formation requires knowledge of the magmatic evolution, which is notoriously difficult to reconstruct from bulk rock compositions. We unlocked the plutonic archive through hafnium (Hf) and oxygen (O) isotope analysis of zoned zircon crystals from the classic hornblende-bearing (I-type) granites of eastern Australia. This granite type forms by the reworking of sedimentary materials by mantle-like magmas instead of by remelting ancient metamorphosed igneous rocks as widely believed. I-type magmatism thus drives the coupled growth and differentiation of continental crust.

  11. Theoretical and experimental investigations of the thermoelectric properties of Bi{sub 2}S{sub 3}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chmielowski, Radoslaw, E-mail: chmielowski@imra-europe.com; Péré, Daniel; Jacob, Stéphane

    2015-03-28

    Electronic and transport properties of Bi{sub 2}S{sub 3} with various dopants are studied using density functional theory and experimental characterizations. First, principle calculations of thermoelectric properties are used to evaluate the thermoelectric potential of the orthorhombic Bi{sub 2}S{sub 3} structure. The computational screening of extrinsic defects is used to select the most favorable n-type dopants. Among all the dopants considered, hafnium and chlorine are identified as prospective dopants, whereas, e.g., germanium is found to be unfavorable. This is confirmed by experiment. Seebeck coefficient (S) and electrical conductivity (σ) measurements are performed at room temperature on pellets obtained by spark plasmamore » sintering. An increase of power factors (S{sup 2}·σ) from around 50 up to 500 μW K{sup −2} m{sup −1} is observed for differently doped compounds. In several series of samples, we observed an optimum of power factor above 500 μW K{sup −2} m{sup −1} at room temperature for a chlorine equivalence of 0.25 mol. % BiCl{sub 3}. The obtained results are plotted on a semilogarithmic log (σ) versus S graph to demonstrate that a very strong linear trend that limits the power factor around 500 μW K{sup −2} m{sup −1} exists. Further improvement of Bi{sub 2}S{sub 3} as thermoelectric material will require finding new doping modes that will break through the observed trend. The results of stability tests demonstrate that properties of optimally doped Bi{sub 2}S{sub 3} are stable.« less

  12. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cho, H; Ding, H; Ziemer, B

    Purpose: To investigate the feasibility of energy calibration and energy response characterization of a photon counting detector using x-ray fluorescence. Methods: A comprehensive Monte Carlo simulation study was done to investigate the influence of various geometric components on the x-ray fluorescence measurement. Different materials, sizes, and detection angles were simulated using Geant4 Application for Tomographic Emission (GATE) Monte Carlo package. Simulations were conducted using 100 kVp tungsten-anode spectra with 2 mm Al filter for a single pixel cadmium telluride (CdTe) detector with 3 × 3 mm2 in detection area. The fluorescence material was placed 300 mm away from both themore » x-ray source and the detector. For angular dependence measurement, the distance was decreased to 30 mm to reduce the simulation time. Compound materials, containing silver, barium, gadolinium, hafnium, and gold in cylindrical shape, were simulated. The object size varied from 5 to 100 mm in diameter. The angular dependence of fluorescence and scatter were simulated from 20° to 170° with an incremental step of 10° to optimize the fluorescence to scatter ratio. Furthermore, the angular dependence was also experimentally measured using a spectrometer (X-123CdTe, Amptek Inc., MA) to validate the simulation results. Results: The detection angle between 120° to 160° resulted in more optimal x-ray fluorescence to scatter ratio. At a detection angle of 120°, the object size did not have a significant effect on the fluorescence to scatter ratio. The experimental results of fluorescence angular dependence are in good agreement with the simulation results. The Kα and Kβ peaks of five materials could be identified. Conclusion: The simulation results show that the x-ray fluorescence procedure has the potential to be used for detector energy calibration and detector response characteristics by using the optimal system geometry.« less

  13. Nickel aluminide alloy suitable for structural applications

    DOEpatents

    Liu, Chain T.

    1998-01-01

    Alloys for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1.+-.0.8%)Al--(1.0.+-.0.8%)Mo--(0.7.+-.0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques.

  14. Effects of carbon and hafnium concentrations in wrought powder-metallurgy superalloys based on NASA 2B-11 alloy

    NASA Technical Reports Server (NTRS)

    Miner, R. V., Jr.

    1976-01-01

    A candidate alloy for advanced-temperature turbine engine disks, and four modifications of that alloy with various C and Hf concentrations were produced as cross-rolled disks from prealloyed powder that was hot isostatically compacted. The mechanical properties, microstructures, and phase relations of the alloys are discussed in terms of their C and Hf concentrations. A low-C and high-Hf modification of IIB-11 had the best balance of mechanical properties for service below about 750 C. Because of their finer grain sizes, none of the powder-metallurgy alloys produced had the high-temperature rupture strength of conventionally cast and wrought IIB-11.

  15. Assessment of the State of the Art of Ultra High Temperature Ceramics

    NASA Technical Reports Server (NTRS)

    Johnson, Sylvia; Gasch, Matt; Stackpoole, Mairead

    2009-01-01

    Ultra High Temperature Ceramics (UHTCs) are a family of materials that includes the borides, carbides and nitrides of hafnium-, zirconium- and titanium-based systems. UHTCs are famous for possessing some of the highest melting points of known materials. In addition, they are very hard, have good wear resistance, mechanical strength, and relatively high thermal conductivities (compared to other ceramic materials). Because of these attributes, UHTCs are ideal for thermal protection systems, especially those that require chemical and structural stability at extremely high operating temperatures. UHTCs have the potential to revolutionize the aerospace industry by enabling the development of sharp hypersonic vehicles or atmospheric entry probes capable of the most extreme entry conditions.

  16. Refined separation of combined Fe–Hf from rock matrices for isotope analyses using AG-MP-1M and Ln-Spec chromatographic extraction resins

    PubMed Central

    Cheng, Ting; Nebel, Oliver; Sossi, Paolo A.; Chen, Fukun

    2014-01-01

    A combined procedure for separating Fe and Hf from a single rock digestion is presented. In a two-stage chromatographic extraction process, a purified Fe fraction is first quantitatively separated from the rock matrix using AG-MP-1M resin in HCl. Hafnium is subsequently isolated using a modified version of a commonly applied method using Eichrom LN-Spec resin. Our combined method includes:•Purification of Fe from the rock matrix using HCl, ready for mass spectrometric analysis.•Direct loading of the matrix onto the resin that is used for Hf purification.•Collection of a Fe-free Hf fraction. PMID:26150946

  17. Effect of native defects and Co doping on ferromagnetism in HfO2: first-principles calculations.

    PubMed

    Han, Chong; Yan, Shi-Shen; Lin, Xue-Ling; Hu, Shu-Jun; Zhao, Ming-Wen; Yao, Xin-Xin; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2011-05-01

    First-principles calculations of undoped HfO(2) and cobalt-doped HfO(2) have been carried out to study the magnetic properties of the dielectric material. In contrast to previous reports, it was found that the native defects in HfO(2) could not induce strong ferromagnetism. However, the cobalt substituting hafnium is the most stable defect under oxidation condition, and the ferromagnetic (FM) coupling between the cobalt substitutions is favorable in various configurations. We found that the FM coupling is mediated by the threefold-coordinated oxygen atoms in monoclinic HfO(2) and could be further enhanced in electron-rich condition. Copyright © 2010 Wiley Periodicals, Inc.

  18. Bonded ultrasonic transducer and method for making

    DOEpatents

    Dixon, R.D.; Roe, L.H.; Migliori, A.

    1995-11-14

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements. 12 figs.

  19. Effect of aging at 1040 C (1900 F) on the ductility and structure of a tantalum alloy, T-111

    NASA Technical Reports Server (NTRS)

    Watson, G. K.; Stephens, J. R.

    1972-01-01

    The post-aging embrittlement of T-111 (tantalum - 8-percent tungsten - 2-percent hafnium) following exposure for up to about 10,000 hours at 1040 C in either vacuum or liquid lithium was investigated for sheet and tubing samples. This thermal aging was shown to greatly increase the sensitivity of T-111 to hydrogen embrittlement during subsequent room temperature specimen processing or testing. The hydrogen embrittlement problem can be avoided by preventing exposure to the T-111 to moisture during post-aging processing or testing. Aging at 1040 C also resulted in formation of HfO2 particles at grain boundaries, which may contribute to the observed embrittlement.

  20. The solar photospheric abundance of hafnium and thorium. Results from CO5BOLD 3D hydrodynamic model atmospheres

    NASA Astrophysics Data System (ADS)

    Caffau, E.; Sbordone, L.; Ludwig, H.-G.; Bonifacio, P.; Steffen, M.; Behara, N. T.

    2008-05-01

    Context: The stable element hafnium (Hf) and the radioactive element thorium (Th) were recently suggested as a suitable pair for radioactive dating of stars. The applicability of this elemental pair needs to be established for stellar spectroscopy. Aims: We aim at a spectroscopic determination of the abundance of Hf and Th in the solar photosphere based on a CO5BOLD 3D hydrodynamical model atmosphere. We put this into a wider context by investigating 3D abundance corrections for a set of G- and F-type dwarfs. Methods: High-resolution, high signal-to-noise solar spectra were compared to line synthesis calculations performed on a solar CO5BOLD model. For the other atmospheres, we compared synthetic spectra of CO5BOLD 3D and associated 1D models. Results: For Hf we find a photospheric abundance A(Hf) = 0.87 ± 0.04, in good agreement with a previous analysis, based on 1D model atmospheres. The weak Th II 401.9 nm line constitutes the only Th abundance indicator available in the solar spectrum. It lies in the red wing of a Ni-Fe blend exhibiting a non-negligible convective asymmetry. Accounting for the asymmetry-related additional absorption, we obtain A(Th) = 0.08 ± 0.03, consistent with the meteoritic abundance, and about 0.1 dex lower than obtained in previous photospheric abundance determinations. Conclusions: Only for the second time, to our knowledge, has a non-negligible effect of convective line asymmetries on an abundance derivation been highlighted. Three-dimensional hydrodynamical simulations should be employed to measure Th abundances in dwarfs if similar blending is present, as in the solar case. In contrast, 3D effects on Hf abundances are small in G- to mid F-type dwarfs and sub-giants, and 1D model atmospheres can be conveniently used.

  1. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers

    PubMed Central

    Dorvel, Brian R.; Reddy, Bobby; Go, Jonghyun; Guevara, Carlos Duarte; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-01-01

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in Point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFET’s has been small oligonucleotides, more specifically microRNA (miRNA). MicroRNA’s are small RNA oligonucleotides which bind to messenger RNA’s, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO2 dielectric based silicon nanowires for biosensing applications. Here we demonstrate sensing of single stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100fM detection levels of miR-10b DNA analogue, with a theoretical limit of detection of 1fM. Moreover, the non-complementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform. PMID:22695179

  2. The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

    NASA Astrophysics Data System (ADS)

    Nguyen, Duc; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Girolami, Gregory S.; Lyding, Joseph; Gruebele, Martin

    2014-11-01

    Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB2 glass surface, two-state hopping of 1-2 nm diameter cooperatively rearranging regions or "clusters" occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (<0.5 nm) imaging, scanning tunneling spectroscopy and voltage modulation, ruling out individual atoms, diffusing adsorbates, or pinned charges as the origin of the observed two-state hopping. Smaller clusters are more likely to hop, larger ones are more likely to be immobile. HfB2 has a very high bulk glass transition temperature Tg, and we observe no three-state hopping or sequential two-state hopping previously seen on lower Tg glass surfaces. The electronic density of states of clusters does not change when they hop up or down, allowing us to calibrate an accurate relative z-axis scale. By directly measuring and histogramming single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how "mixed" features can show up in surface dynamics of glasses.

  3. Configuration-constrained cranking Hartree-Fock pairing calculations for sidebands of nuclei

    NASA Astrophysics Data System (ADS)

    Liang, W. Y.; Jiao, C. F.; Wu, Q.; Fu, X. M.; Xu, F. R.

    2015-12-01

    Background: Nuclear collective rotations have been successfully described by the cranking Hartree-Fock-Bogoliubov (HFB) model. However, for rotational sidebands which are built on intrinsic excited configurations, it may not be easy to find converged cranking HFB solutions. The nonconservation of the particle number in the BCS pairing is another shortcoming. To improve the pairing treatment, a particle-number-conserving (PNC) pairing method was suggested. But the existing PNC calculations were performed within a phenomenological one-body potential (e.g., Nilsson or Woods-Saxon) in which one has to deal the double-counting problem. Purpose: The present work aims at an improved description of nuclear rotations, particularly for the rotations of excited configurations, i.e., sidebands. Methods: We developed a configuration-constrained cranking Skyrme Hartree-Fock (SHF) calculation with the pairing correlation treated by the PNC method. The PNC pairing takes the philosophy of the shell model which diagonalizes the Hamiltonian in a truncated model space. The cranked deformed SHF basis provides a small but efficient model space for the PNC diagonalization. Results: We have applied the present method to the calculations of collective rotations of hafnium isotopes for both ground-state bands and sidebands, reproducing well experimental observations. The first up-bendings observed in the yrast bands of the hafnium isotopes are reproduced, and the second up-bendings are predicted. Calculations for rotational bands built on broken-pair excited configurations agree well with experimental data. The band-mixing between two Kπ=6+ bands observed in 176Hf and the K purity of the 178Hf rotational state built on the famous 31 yr Kπ=16+ isomer are discussed. Conclusions: The developed configuration-constrained cranking calculation has been proved to be a powerful tool to describe both the yrast bands and sidebands of deformed nuclei. The analyses of rotational moments of inertia help to understand the structures of nuclei, including rotational alignments, configurations, and competitions between collective and single-particle excitations.

  4. Electrical characterization of doped strontium titanate thin films for semiconductor memories

    NASA Astrophysics Data System (ADS)

    Han, Jeong Hee

    2002-08-01

    Doped strontium titanate (ST) thin films were investigated for high-density memory applications. ST has become a promising candidate to replace conventional silicon oxide due to its high inherent dielectric constant, superior leakage characteristics, and good chemical stability. However, oxygen vacancies and the problems that arise as a result are one of the main drawbacks against this material. Resistance degradation is a serious reliability issue in perovskite titanate films and may be a result of oxygen vacancies. In this dissertation, an attempt to reduce the resistance degradation was made by doping the ST films with both niobium and lanthanum. Niobium is a B-site donor in the perovskite, whereas lanthanum is an A-site donor. Both have an extra valence charge than the atom which it replaces in the crystal structure. With a higher valence charge, the number of oxygen vacancies is hoped to be reduced and result in better electrical performance. Experimental results showed that the degradation rate is reduced by doping with either niobium or lanthanum. A bi-layer study was also performed to optimize the dielectric with the strengths of both doped and undoped strontium titanate and to distinguish the source of the oxygen vacancies. A study on the conduction mechanisms and dielectric dispersion was also performed. An additional study was made on the effect of iridium as a possible gate electrode for a MOS capacitor. Hafnium oxide was used as the high-permittivity oxide. The results observed showed that the capacitance was higher for iridium electrodes than those for platinum electrodes. However, both electrodes showed unacceptable frequency dispersion which may be caused by crude patterning techniques. A hysteresis review was also done for hafnium and zirconium oxides. It was observed that the hysteresis measured in the high-permittivity oxides are dependent on the accumulation sweep voltage due to the trapping and de-trapping of charge at the dielectric-silicon interface.

  5. Glass-water interactions: Effect of high-valence cations on glass structure and chemical durability

    DOE PAGES

    Pierce, Eric M.; Kerisit, Sebastien N.; Charpentier, Thibault; ...

    2016-02-27

    Spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), with the addition of the HVC element hafnium in the Na 2O Al 2O 3 B 2O 3 HfO 2 SiO 2 system (e.g., Na/(Al+B) = 1.0 and HfO 2/SiO 2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N 4 and increasesmore » the amount of Si–O–Hf moieties in the glass. Results from flow through experiments conducted under dilute and near saturated conditions show a decrease of approximately 100 or more in the dissolution rate over the series from 0 to 20 mol% HfO 2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveal a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the formation of a low coordination Si sites when Si from the saturated solution adsorbs to Hf on the glass surface. The residence time of the newly formed low coordination Si sites is longer at the glass surface and increases the density of anchor sites from which altered layers with higher Si densities can form than in the absence of Hf. These results illustrate the importance of understanding solid water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.« less

  6. Production of nuclear grade zirconium: A review

    NASA Astrophysics Data System (ADS)

    Xu, L.; Xiao, Y.; van Sandwijk, A.; Xu, Q.; Yang, Y.

    2015-11-01

    Zirconium is an ideal material for nuclear reactors due to its low absorption cross-section for thermal neutrons, whereas the typically contained hafnium with strong neutron-absorption is very harmful for zirconium as a fuel cladding material. This paper provides an overview of the processes for nuclear grade zirconium production with emphasis on the methods of Zr-Hf separation. The separation processes are roughly classified into hydro- and pyrometallurgical routes. The known pyrometallurgical Zr-Hf separation methods are discussed based on the following reaction features: redox characteristics, volatility, electrochemical properties and molten salt-metal equilibrium. In the present paper, the available Zr-Hf separation technologies are compared. The advantages and disadvantages as well as future directions of research and development for nuclear grade zirconium production are discussed.

  7. Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

    NASA Astrophysics Data System (ADS)

    Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

    2013-12-01

    An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

  8. Nickel aluminide alloy suitable for structural applications

    DOEpatents

    Liu, C.T.

    1998-03-10

    Alloys are disclosed for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1{+-}0.8%)Al--(1.0{+-}0.8%)Mo--(0.7 + 0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques. 4 figs.

  9. Deep-ocean ferromanganese crusts and nodules

    USGS Publications Warehouse

    Hein, James R.; Koschinsky, Andrea

    2014-01-01

    Ferromanganese crusts and nodules may provide a future resource for a large variety of metals, including many that are essential for emerging high- and green-technology applications. A brief review of nodules and crusts provides a setting for a discussion on the latest (past 10 years) research related to the geochemistry of sequestration of metals from seawater. Special attention is given to cobalt, nickel, titanium, rare earth elements and yttrium, bismuth, platinum, tungsten, tantalum, hafnium, tellurium, molybdenum, niobium, zirconium, and lithium. Sequestration from seawater by sorption, surface oxidation, substitution, and precipitation of discrete phases is discussed. Mechanisms of metal enrichment reflect modes of formation of the crusts and nodules, such as hydrogenetic (from seawater), diagenetic (from porewaters), and mixed diagenetic–hydrogenetic processes.

  10. Early formation of the Moon 4.51 billion years ago

    PubMed Central

    Barboni, Melanie; Boehnke, Patrick; Keller, Brenhin; Kohl, Issaku E.; Schoene, Blair; Young, Edward D.; McKeegan, Kevin D.

    2017-01-01

    Establishing the age of the Moon is critical to understanding solar system evolution and the formation of rocky planets, including Earth. However, despite its importance, the age of the Moon has never been accurately determined. We present uranium-lead dating of Apollo 14 zircon fragments that yield highly precise, concordant ages, demonstrating that they are robust against postcrystallization isotopic disturbances. Hafnium isotopic analyses of the same fragments show extremely low initial 176Hf/177Hf ratios corrected for cosmic ray exposure that are near the solar system initial value. Our data indicate differentiation of the lunar crust by 4.51 billion years, indicating the formation of the Moon within the first ~60 million years after the birth of the solar system. PMID:28097222

  11. Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

    2010-11-01

    A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.

  12. Diagnostics of cathode material loss in cutting plasma torch

    NASA Astrophysics Data System (ADS)

    Gruber, J.; Šonský, J.; Hlína, J.

    2014-07-01

    A cutting plasma torch was observed in several ways by a high-speed camera with a focus on the cathode area. In the first experiment, the plasma arc between the nozzle tip and anode was recorded in a series of duty cycles ranging from new unworn cathodes to cathode failure due to wear and material loss. In the second experiment, we used a specially modified nozzle to observe the inside area between the cathode and the nozzle exit through a fused silica window. Finally, using tilted view, we observed a pool of molten hafnium at the cathode tip during the plasma torch operation. The process of cathode material melting, droplet formation, their expulsion and rate of cathode material loss was examined.

  13. Magnesium fluoride as energy storage medium for spacecraft solar thermal power systems

    NASA Technical Reports Server (NTRS)

    Lurio, Charles A.

    1992-01-01

    MgF2 was investigated as a phase-change energy-storage material for LEO power systems using solar heat to run thermal cycles. It provides a high heat of fusion per unit mass at a high melting point (1536 K). Theoretical evaluation showed the basic chemical compatibility of liquid MgF2 with refractory metals at 1600 K, though transient high pressures of H2 can occur in a closed container due to reaction with residual moisture. The compatibility was tested in two refractory metal containers for over 2000 h. Some showed no deterioration, while there was evidence that the fluoride reacted with hafnium in others. Corollary tests showed that the MgF2 supercooled by 10-30 K and 50-90 K.

  14. Efficient and self-adaptive in-situ learning in multilayer memristor neural networks.

    PubMed

    Li, Can; Belkin, Daniel; Li, Yunning; Yan, Peng; Hu, Miao; Ge, Ning; Jiang, Hao; Montgomery, Eric; Lin, Peng; Wang, Zhongrui; Song, Wenhao; Strachan, John Paul; Barnell, Mark; Wu, Qing; Williams, R Stanley; Yang, J Joshua; Xia, Qiangfei

    2018-06-19

    Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.

  15. Stabilized tin-oxide-based oxidation/reduction catalysts

    NASA Technical Reports Server (NTRS)

    Watkins, Anthony Neal (Inventor); Oglesby, Donald M. (Inventor); Gulati, Suresh T. (Inventor); Summers, Jerry C. (Inventor); Schryer, David R. (Inventor); Davis, Patricia P. (Inventor); Leighty, Bradley D. (Inventor); Jordan, Jeffrey D. (Inventor); Schryer, Jacqueline L. (Inventor)

    2008-01-01

    The invention described herein involves a novel approach to the production of oxidation/reduction catalytic systems. The present invention serves to stabilize the tin oxide reducible metal-oxide coating by co-incorporating at least another metal-oxide species, such as zirconium. In one embodiment, a third metal-oxide species is incorporated, selected from the group consisting of cerium, lanthanum, hafnium, and ruthenium. The incorporation of the additional metal oxide components serves to stabilize the active tin-oxide layer in the catalytic process during high-temperature operation in a reducing environment (e.g., automobile exhaust). Moreover, the additional metal oxides are active components due to their oxygen-retention capabilities. Together, these features provide a mechanism to extend the range of operation of the tin-oxide-based catalyst system for automotive applications, while maintaining the existing advantages.

  16. Processing of Ni30Pt20Ti50 High-Temperature Shape-Memory Alloy Into Thin Rod Demonstrated

    NASA Technical Reports Server (NTRS)

    Noebe, Ronald D.; Draper, Susan L.; Biles, Tiffany A.; Leonhardt, Todd

    2005-01-01

    High-temperature shape-memory alloys (HTSMAs) based on nickel-titanium (NiTi) with significant ternary additions of palladium (Pd), platinum (Pt), gold (Au), or hafnium (Hf) have been identified as potential high-temperature actuator materials for use up to 500 C. These materials provide an enabling technology for the development of "smart structures" used to control the noise, emissions, or efficiency of gas turbine engines. The demand for these high-temperature versions of conventional shape-memory alloys also has been growing in the automotive, process control, and energy industries. However these materials, including the NiPtTi alloys being developed at the NASA Glenn Research Center, will never find widespread acceptance unless they can be readily processed into useable forms.

  17. Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

    2016-05-23

    Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less

  18. Highly stable thin film transistors using multilayer channel structure

    NASA Astrophysics Data System (ADS)

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.; Hedhili, M. N.; Alshareef, H. N.

    2015-03-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  19. Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Soares, G. V.; Krug, C.; Miotti, L.

    2011-03-28

    Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

  20. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO{sub 2}) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO{sub 2} layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO{sub 2} layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnOmore » layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.« less

  1. Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2016-01-01

    This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over 1-m scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

  2. Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liang-Yu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2016-01-01

    This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over approximately 1-micrometer scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

  3. Magnesium fluoride as energy storage medium for spacecraft solar thermal power systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lurio, C.A.

    1992-10-01

    MgF2 was investigated as a phase-change energy-storage material for LEO power systems using solar heat to run thermal cycles. It provides a high heat of fusion per unit mass at a high melting point (1536 K). Theoretical evaluation showed the basic chemical compatibility of liquid MgF2 with refractory metals at 1600 K, though transient high pressures of H2 can occur in a closed container due to reaction with residual moisture. The compatibility was tested in two refractory metal containers for over 2000 h. Some showed no deterioration, while there was evidence that the fluoride reacted with hafnium in others. Corollarymore » tests showed that the MgF2 supercooled by 10-30 K and 50-90 K. 24 refs.« less

  4. Glass-water interaction: Effect of high-valence cations on glass structure and chemical durability

    NASA Astrophysics Data System (ADS)

    Hopf, J.; Kerisit, S. N.; Angeli, F.; Charpentier, T.; Icenhower, J. P.; McGrail, B. P.; Windisch, C. F.; Burton, S. D.; Pierce, E. M.

    2016-05-01

    Borosilicate glass is a durable solid, but it dissolves when in contact with aqueous fluids. The dissolution mechanism, which involves a variety of sequential reactions that occur at the solid-fluid interface, has important implications for the corrosion resistance of industrial and nuclear waste glasses. In this study, spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high-valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), with the addition of the HVC element hafnium in the Na2O-Al2O3-B2O3-HfO2-SiO2 system (e.g., Na/[Al + B] = 1.0 and HfO2/SiO2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N4 (tetrahedral boron/total boron) and increases the amount of Si-O-Hf moieties in the glass. Results from flow-through experiments conducted under dilute and near-saturated conditions show a decrease of approximately 100× or more in the dissolution rate over the series from 0 to 20 mol% HfO2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveals a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the stronger binding of Si sites that deposit on the surface from the influent when Hf is present in the glass. As a result, the residence time at the glass surface of these newly-formed Si sites is longer in the presence of Hf, which increases the density of anchor sites from which altered layers with higher Si densities can form. These results illustrate the importance of understanding solid-water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.

  5. Evolution of E 2 transition strength in deformed hafnium isotopes from new measurements on 172Hf,174Hf, and 176Hf

    NASA Astrophysics Data System (ADS)

    Rudigier, M.; Nomura, K.; Dannhoff, M.; Gerst, R.-B.; Jolie, J.; Saed-Samii, N.; Stegemann, S.; Régis, J.-M.; Robledo, L. M.; Rodríguez-Guzmán, R.; Blazhev, A.; Fransen, Ch.; Warr, N.; Zell, K. O.

    2015-04-01

    Background: The available data for E 2 transition strengths in the region between neutron-deficient hafnium and platinum isotopes are far from complete. More and precise data are needed to enhance the picture of structure evolution in this region and to test state-of-the-art nuclear models. In a simple model, the maximum collectivity is expected at the middle of the major shell. However, for actual nuclei, particularly in heavy-mass regions, which should be highly complex, this picture may no longer be the case, and one should use a more realistic nuclear-structure model. We address this point by studying the spectroscopy of Hf as a representative case. Purpose: We remeasure the 21+ half-lives of 172,174,176Hf, for which there is some disagreement in the literature. The main goal is to measure, for the first time, the half-lives of higher-lying states of the rotational band. The new results are compared to a theoretical calculation for absolute transition strengths. Method: The half-lives were measured using γ -γ and conversion-electron-γ delayed coincidences with the fast timing method. For the determination of half-lives in the picosecond region, the generalized centroid difference method was applied. For the theoretical calculation of the spectroscopic properties, the interacting boson model is employed, whose Hamiltonian is determined based on microscopic energy-density functional calculations. Results: The measured 21+ half-lives disagree with results from earlier γ -γ fast timing measurements, but are in agreement with data from Coulomb excitation experiments and other methods. Half-lives of the 41+ and 61+ states were measured, as well as a lower limit for the 81+ states. Conclusions: This work shows the importance of a mass-dependent effective boson charge in the interacting boson model for the description of E 2 transition rates in chains of nuclei. It encourages further studies of the microscopic origin of this mass dependence. New experimental values on transition rates in nuclei from neighboring isotopic chains could support these studies.

  6. Characterization, shaping, and joining of SiC/superalloy sheet for exhaust system components

    NASA Technical Reports Server (NTRS)

    Cornie, J. A.

    1977-01-01

    Hafnium carbide was shown to be virtually inert when in contact with silicon carbide and Waspaloy for at least 200 hr at 1093 C (2000 F). Extensive interaction was noted with other superalloys such as HA-188. A continuous CVD HfC deposition process was developed for deposition of up to 8 microns on .14 mm (.0056 in.) SiC tungsten core filament at rates as high as .6 m/min. The rate can be increased by increasing the length of the reactor and the output of the power supply used in resistive heating of the filament substrate. The strength of HfC coated filament varies with thickness in a Griffith-like manner. This strength reduction was greater for HfC coatings than for tungsten coatings, presumably because of the greater ductility of tungsten.

  7. Methodology for the effective stabilization of tin-oxide-based oxidation/reduction catalysts

    NASA Technical Reports Server (NTRS)

    Jordan, Jeffrey D. (Inventor); Schryer, David R. (Inventor); Leighty, Bradley D. (Inventor); Watkins, Anthony N. (Inventor); Summers, Jerry C. (Inventor); Davis, Patricia P. (Inventor); Oglesby, Donald M. (Inventor); Schryer, Jacqueline L. (Inventor); Gulati, Suresh T. (Inventor)

    2011-01-01

    The invention described herein involves a novel approach to the production of oxidation/reduction catalytic systems. The present invention serves to stabilize the tin oxide reducible metal-oxide coating by co-incorporating at least another metal-oxide species, such as zirconium. In one embodiment, a third metal-oxide species is incorporated, selected from the group consisting of cerium, lanthanum, hafnium, and ruthenium. The incorporation of the additional metal oxide components serves to stabilize the active tin-oxide layer in the catalytic process during high-temperature operation in a reducing environment (e.g., automobile exhaust). Moreover, the additional metal oxides are active components due to their oxygen-retention capabilities. Together, these features provide a mechanism to extend the range of operation of the tin-oxide-based catalyst system for automotive applications, while maintaining the existing advantages.

  8. Specimen-thickness effects on transmission Kikuchi patterns in the scanning electron microscope.

    PubMed

    Rice, K P; Keller, R R; Stoykovich, M P

    2014-06-01

    We report the effects of varying specimen thickness on the generation of transmission Kikuchi patterns in the scanning electron microscope. Diffraction patterns sufficient for automated indexing were observed from films spanning nearly three orders of magnitude in thickness in several materials, from 5 nm of hafnium dioxide to 3 μm of aluminum, corresponding to a mass-thickness range of ~5 to 810 μg cm(-2) . The scattering events that are most likely to be detected in transmission are shown to be very near the exit surface of the films. The energies, spatial distribution and trajectories of the electrons that are transmitted through the film and are collected by the detector are predicted using Monte Carlo simulations. Published 2014. This article is a U.S. Government work and is in the public domain in the USA.

  9. Oxygen migration during resistance switching and failure of hafnium oxide memristors

    DOE PAGES

    Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; ...

    2017-03-06

    While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Furthermore, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfO x memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information,more » we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.« less

  10. Nanoparticle radio-enhancement: principles, progress and application to cancer treatment

    NASA Astrophysics Data System (ADS)

    Kuncic, Zdenka; Lacombe, Sandrine

    2018-01-01

    Enhancement of radiation effects by high-atomic number nanoparticles (NPs) has been increasingly studied for its potential to improve radiotherapeutic efficacy. The underlying principle of NP radio-enhancement is the potential to release copious electrons into a nanoscale volume, thereby amplifying radiation-induced biological damage. While the vast majority of studies to date have focused on gold nanoparticles with photon radiation, an increasing number of experimental, theoretical and simulation studies have explored opportunities offered by other NPs (e.g. gadolinium, platinum, iron oxide, hafnium) and other therapeutic radiation sources such as ion beams. It is thus of interest to the research community to consolidate findings from the different studies and summarise progress to date, as well as to identify strategies that offer promising opportunities for clinical translation. This is the purpose of this Topical Review.

  11. Coordination Chemistry of Disilylated Germylenes with Group 4 Metallocenes

    PubMed Central

    2013-01-01

    Reaction of the PEt3 adduct of a disilylated five-membered cyclic germylene with group 4 metallocene dichlorides in the presence of magnesium led to the formation of the respective germylene metallocene phosphine complexes of titanium, zirconium, and hafnium. Attempts to react the related NHC adduct of a disilylated four-membered cyclic germylene under the same conditions with Cp2TiCl2 did not give the expected germylene NHC titanocene complex. This complex was, however, obtained in the reaction of Cp2Ti(btmsa) with the NHC germylene adduct. A computational analysis of the structure of the group 4 metallocene germylene complexes revealed the multiple-bond character of the M–Ge(II) linkage, which can be rationalized with the classical σ-donor/π-acceptor interaction. The strength of the M–Ge(II) bond increases descending group 4. PMID:23874053

  12. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

    2017-05-01

    In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

  13. Light Water Breeder Reactor fuel rod design and performance characteristics (LWBR Development Program)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Campbell, W.R.; Giovengo, J.F.

    1987-10-01

    Light Water Breeder Reactor (LWBR) fuel rods were designed to provide a reliable fuel system utilizing thorium/uranium-233 mixed-oxide fuel while simultaneously minimizing structural material to enhance fuel breeding. The fuel system was designed to be capable of operating successfully under both load follow and base load conditions. The breeding objective required thin-walled, low hafnium content Zircaloy cladding, tightly spaced fuel rods with a minimum number of support grid levels, and movable fuel rod bundles to supplant control rods. Specific fuel rod design considerations and their effects on performance capability are described. Successful completion of power operations to over 160 percentmore » of design lifetime including over 200 daily load follow cycles has proven the performance capability of the fuel system. 68 refs., 19 figs., 44 tabs.« less

  14. Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

    NASA Astrophysics Data System (ADS)

    Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

    2013-01-01

    The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

  15. Discharge Characteristics of DC Arc Water Plasma for Environmental Applications

    NASA Astrophysics Data System (ADS)

    Li, Tianming; Sooseok, Choi; Takayuki, Watanabe

    2012-12-01

    A water plasma was generated by DC arc discharge with a hafnium embedded rod-type cathode and a nozzle-type anode. The discharge characteristics were examined by changing the operation parameter of the arc current. The dynamic behavior of the arc discharge led to significant fluctuations in the arc voltage and its frequency. Analyses of the high speed image and the arc voltage waveform showed that the arc discharge was in the restrike mode and its frequency varied within several tens of kilohertz according to the operating conditions. The larger thermal plasma volume was generated by the higher flow from the forming steam with a higher restrike frequency in the higher arc current conditions. In addition, the characteristics of the water plasma jet were investigated by means of optical emission spectroscopy to identify the abundant radicals required in an efficient waste treatment process.

  16. Nanocontainers made of Various Materials with Tunable Shape and Size

    NASA Astrophysics Data System (ADS)

    Zhao, Xianglong; Meng, Guowen; Han, Fangming; Li, Xiangdong; Chen, Bensong; Xu, Qiaoling; Zhu, Xiaoguang; Chu, Zhaoqin; Kong, Mingguang; Huang, Qing

    2013-07-01

    Nanocontainers have great potentials in targeted drug delivery and nanospace-confined reactions. However, the previous synthetic approaches exhibited limited control over the morphology, size and materials of the nanocontainers, which are crucial in practical applications. Here, we present a synthetic approach to multi-segment linear-shaped nanopores with pre-designed morphologies inside anodic aluminium oxide (AAO), by tailoring the anodizing duration after a rational increase of the applied anodizing voltage and the number of voltage increase during Al foil anodization. Then, we achieve nanocontainers with designed morphologies, such as nanofunnels, nanobottles, nano-separating-funnels and nanodroppers, with tunable sizes and diverse materials of carbon, silicon, germanium, hafnium oxide, silica and nickel/carbon magnetic composite, by depositing a thin layer of materials on the inner walls of the pre-designed AAO nanopores. The strategy has far-reaching implications in the designing and large-scale fabrication of nanocontainers, opening up new opportunities in nanotechnology applications.

  17. Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces

    NASA Astrophysics Data System (ADS)

    Lahti, A.; Levämäki, H.; Mäkelä, J.; Tuominen, M.; Yasir, M.; Dahl, J.; Kuzmin, M.; Laukkanen, P.; Kokko, K.; Punkkinen, M. P. J.

    2018-01-01

    III-V semiconductors are prominent alternatives to silicon in metal oxide semiconductor devices. Hafnium dioxide (HfO2) is a promising oxide with a high dielectric constant to replace silicon dioxide (SiO2). The potentiality of the oxide/III-V semiconductor interfaces is diminished due to high density of defects leading to the Fermi level pinning. The character of the harmful defects has been intensively debated. It is very important to understand thermodynamics and atomic structures of the interfaces to interpret experiments and design methods to reduce the defect density. Various realistic gap defect state free models for the HfO2/III-V(100) interfaces are presented. Relative energies of several coherent and semi-coherent oxide/III-V semiconductor interfaces are determined for the first time. The coherent and semi-coherent interfaces represent the main interface types, based on the Ga-O bridges and As (P) dimers, respectively.

  18. Fractographic Analysis of HfB2-SiC and ZrB2-SiC Composites

    NASA Technical Reports Server (NTRS)

    Mecholsky, J.J., Jr.; Ellerby, D. T.; Johnson, S. M.; Stackpoole, M. M.; Loehman, R. E.; Arnold, Jim (Technical Monitor)

    2001-01-01

    Hafnium diboride-silicon carbide and zirconium diboride-silicon carbide composites are potential materials for high temperature leading edge applications on reusable launch vehicles. In order to establish material constants necessary for evaluation of in-situ fracture, bars fractured in four point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values, and the crack branching constants were established to use in forensic fractography of materials for future flight applications. The fracture toughnesses range from about 13 MPam (sup 1/2) at room temperature to about 6 MPam (sup 1/2) at 1400 C for ZrB2-SiC composites and from about 11 MPam (sup 1/2) at room temperature to about 4 MPam (sup 1/2) at 1400 C for HfB2-SiC composites.

  19. Influence of dielectric protective layer on laser damage resistance of gold coated gratings

    NASA Astrophysics Data System (ADS)

    Wu, Kepeng; Ma, Ping; Pu, Yunti; Xia, Zhilin

    2016-03-01

    Aiming at the problem that the damage threshold of gold coated grating is relatively low, a dielectric film is considered on the gold coated gratings as a protective layer. The thickness range of the protective layer is determined under the prerequisite that the diffraction efficiency of the gold coated grating is reduced to an acceptable degree. In this paper, the electromagnetic field, the temperature field and the stress field distribution in the grating are calculated when the silica and hafnium oxide are used as protective layers, under the preconditions of the electromagnetic field distribution of the gratings known. The results show that the addition of the protective layer changes the distribution of the electromagnetic field, temperature field and stress field in the grating, and the protective layer with an appropriate thickness can improve the laser damage resistance of the grating.

  20. Carbide and carbonitride surface treatment method for refractory metals

    DOEpatents

    Meyer, G.A.; Schildbach, M.A.

    1996-12-03

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system including a reaction chamber, a source of elemental carbon, a heating subassembly and a source of reaction gases. Alternative methods of providing the elemental carbon and the reaction gases are provided, as well as methods of supporting the metal part, evacuating the chamber with a vacuum subassembly and heating all of the components to the desired temperature. 5 figs.

  1. Development study of compositions for advanced wrought nickel-base superalloys

    NASA Technical Reports Server (NTRS)

    Kent, W. B.

    1972-01-01

    Using NASA IIb as a base composition, the effects of five key elements (carbon, tungsten, tantalum, aluminum, and hafnium) on resultant properties were investigated in an effort to optimize the composition and derive new wrought high temperature alloys with improved strength characteristics. A total of nineteen compositions were melted, extruded, and rolled to bar stock using thermomechanical processing. Both full and partial solution heat treatments were developed for the compositions. Tensile properties from room temperature to 1800 deg F, stress and creep rupture properties to 1800 deg F, and thermal stability characteristics were evaluated. NASA IIb-7 exhibited the best response to the partial solution heat treatment for optimum properties up to 1200 deg F. The alloy contained 0.13C, 9.0 Cr, 9.0 Co, 2.0 Mo, 7.5 W, 10.0 Ta, 3.5 Al, 0.75 Ti, 0.02 B, 0.10 Zr, 0.50 V, 1.0 Hf, and balance nickel.

  2. Nanocontainers made of Various Materials with Tunable Shape and Size

    PubMed Central

    Zhao, Xianglong; Meng, Guowen; Han, Fangming; Li, Xiangdong; Chen, Bensong; Xu, Qiaoling; Zhu, Xiaoguang; Chu, Zhaoqin; Kong, Mingguang; Huang, Qing

    2013-01-01

    Nanocontainers have great potentials in targeted drug delivery and nanospace-confined reactions. However, the previous synthetic approaches exhibited limited control over the morphology, size and materials of the nanocontainers, which are crucial in practical applications. Here, we present a synthetic approach to multi-segment linear-shaped nanopores with pre-designed morphologies inside anodic aluminium oxide (AAO), by tailoring the anodizing duration after a rational increase of the applied anodizing voltage and the number of voltage increase during Al foil anodization. Then, we achieve nanocontainers with designed morphologies, such as nanofunnels, nanobottles, nano-separating-funnels and nanodroppers, with tunable sizes and diverse materials of carbon, silicon, germanium, hafnium oxide, silica and nickel/carbon magnetic composite, by depositing a thin layer of materials on the inner walls of the pre-designed AAO nanopores. The strategy has far-reaching implications in the designing and large-scale fabrication of nanocontainers, opening up new opportunities in nanotechnology applications. PMID:23867836

  3. Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

    NASA Astrophysics Data System (ADS)

    Hu, Ai-Bin; Xu, Qiu-Xia

    2010-05-01

    Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

  4. Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun

    2015-03-01

    Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

  5. Improved spatial resolution and lower-dose pediatric CT imaging: a feasibility study to evaluate narrowing the X-ray photon energy spectrum.

    PubMed

    Benz, Mark G; Benz, Matthew W; Birnbaum, Steven B; Chason, Eric; Sheldon, Brian W; McGuire, Dale

    2014-08-01

    This feasibility study has shown that improved spatial resolution and reduced radiation dose can be achieved in pediatric CT by narrowing the X-ray photon energy spectrum. This is done by placing a hafnium filter between the X-ray generator and a pediatric abdominal phantom. A CT system manufactured in 1999 that was in the process of being remanufactured was used as the platform for this study. This system had the advantage of easy access to the X-ray generator for modifications to change the X-ray photon energy spectrum; it also had the disadvantage of not employing the latest post-imaging noise reduction iterative reconstruction technology. Because we observed improvements after changing the X-ray photon energy spectrum, we recommend a future study combining this change with an optimized iterative reconstruction noise reduction technique.

  6. Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

    PubMed

    Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

    2011-05-13

    The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

  7. METHOD OF PRODUCING HAFNIUM-FREE "CRYSTAL-BAR" ZIRCONIUM FROM A CRUDE SOURCE OF ZIRCONIUM

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Newnham, I.E.

    1959-05-01

    Production of Hf-free crystal-bar Zr is described. The crude source of Zr is carbided with carbon in a graphite resistance furnace, then treated with iodide to form ZrI/sub 4/. The ZrI/sub 4/ plus iodide impurities is heated with Zr powder in an evacuated vessel to 500 C. This causes ZrI/sub 3/ to form and be separated from the more volatile HfI/sub 4/ and AlI/sub 3/ which deposit on the condenserlid. The ZrI/sub 3/ is further separated from iodides of Fe, and V by heating to 350 C to re-form ZrI/sub 4/. The morevolatile ZrI/sub 4/ then is collected in puremore » form on another condenser-lid from which it can be removed and reduced to Zr. (T.R.H.)« less

  8. Laser megajoule 1.06-μm mirror production with very high laser damage threshold

    NASA Astrophysics Data System (ADS)

    Pinot, B.; Leplan, Herve; Houbre, Francois; Lavastre, Eric; Poncetta, Jean-Christophe; Chabassier, Genevieve

    2002-03-01

    As part of the LMJ (Laser Megajoule) program, CEA is building the LIL laser with full size optics and LMJ requirements. SAGEM has been selected as the supplier of large optical components and coatings with very high laser- induced damage threshold. Including spare parts, about 100 mirrors 610*430 mm2 with LIDT-3ns>25 J/cm2 have to be produced. Using a 5 m3 vacuum chamber and the 100 J/cm2 mirror coating process developed at CEA-LETI, with Hafnium and SiO2 materials, we are now typically in a serial production phase. To date, about thirty mirrors have been delivered. This paper focuses on the acceptance tests performed after coating, at SAGEM then CEA: LIDT measurement and Raster-Scan on samples; reflectance mapping on CEA automatic photometer; reflected wavefront deformation with \

  9. Plastic flow and microstructure of cast nickel aluminides at 1273 K

    NASA Astrophysics Data System (ADS)

    Schneibel, J. H.; Porter, W. D.; Horton, J. A.

    1987-12-01

    Chill-cast nickel aluminides based on Ni3Al were compression-tested in vacuum at 1273 K at strain rates ranging from 10-5 s-1 to 10-1 s-1. As the strain rate increases, the propensity for intergranular cracking increases. The ductile-to-brittle transition strain rate (DBTS) of as-cast Ni-22.5Al-0.5Hf-0.1B (at. pct) is approximately 10-1 s-1. Homogenization lowers this value by three orders of magnitude, to 10-4 s-1 (a homogenized specimen disintegrated completely at a rate of 10-3 s-1). The fine-grained structure of the as-cast alloy plays an important role in its relatively high DBTS. A hafnium-free alloy, Ni-24A1-0.1B, on the other hand, shows only a weak dependence of the DBTS on prior homogenization, and possible reasons for this finding are discussed.

  10. Corrosion resistant surface for vanadium nitride and hafnium nitride layers as function of grain size

    NASA Astrophysics Data System (ADS)

    Escobar, C. A.; Caicedo, J. C.; Aperador, W.

    2014-01-01

    In this research it was studied vanadium nitride (VN) and hafnium nitride (HfN) film, which were deposited onto silicon (Si (100)) and AISI 4140 steel substrates via r.f. magnetron sputtering technique in Ar/N2 atmosphere with purity at 99.99% for both V and Hf metallic targets. Both films were approximately 1.2±0.1 μm thick. The crystallography structures that were evaluated via X-ray diffraction analysis (XRD) showed preferential orientations in the Bragg planes VN (200) and HfN (111). The chemical compositions for both films were characterized by EDX. Atomic Force Microscopy (AFM) was used to study the morphology; the results reveal grain sizes of 78±2 nm for VN and 58±2 nm for HfN and roughness values of 4.2±0.1 nm for VN and 1.5±0.1 nm for HfN films. The electrochemical performance in VN and HfN films deposited onto steel 4140 were studied by Tafel polarization curves and impedance spectroscopy methods (EIS) under contact with sodium chloride at 3.5 wt% solution, therefore, it was found that the corrosion rate decreased about 95% in VN and 99% for HfN films in relation to uncoated 4140 steel, thus demonstrating, the protecting effect of VN and HfN films under a corrosive environment as function of morphological characteristics (grain size). VN(grain size)=78±2.0 nm, VN(roughness)=4.2±0.1 nm, VN(corrosion rate)=40.87 μmy. HfN(grain size)=58±2.0 nm, HfN(roughness)=1.5±0.1 nm, HfN(corrosion rate)=0.205 μmy. It was possible to analyze that films with larger grain size, can be observed smaller grain boundary thus generating a higher corrosion rate, therefore, in this work it was found that the HfN layer has better corrosion resistance (low corrosion rate) in relation to VN film which presents a larger grain size, indicating that the low grain boundary in (VN films) does not restrict movement of the Cl- ion and in this way the corrosion rate increases dramatically.

  11. Glass–water interaction: Effect of high-valence cations on glass structure and chemical durability

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hopf, J.; Kerisit, Sebastien N.; Angeli, F.

    2016-05-15

    Borosilicate glass is a durable solid, but it dissolves when in contact with aqueous fluids. The dissolution mechanism, which involves a variety of sequential reactions that occur at the solid-fluid interface, has important implications for the corrosion resistance of industrial and nuclear waste glasses. In this study, spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high–valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), withmore » the addition of the HVC element hafnium in the Na2O–Al2O3–B2O3–HfO2–SiO2 system (e.g., Na/[Al+B] = 1.0 and HfO2/SiO2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N4 (tetrahedral boron/total boron) and increases the amount of Si—O—Hf moieties in the glass. Results from flow–through experiments conducted under dilute and near–saturated conditions show a decrease of approximately 100× or more in the dissolution rate over the series from 0 to 20 mol% HfO2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveals a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the stronger binding of Si sites that deposit on the surface from the influent when Hf is present in the glass. As a result, the residence time at the glass surface of these newly-formed Si sites is longer in the presence of Hf, which increases the density of anchor sites from which altered layers with higher Si densities can form. These results illustrate the importance of understanding solid–water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.« less

  12. Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

    NASA Astrophysics Data System (ADS)

    Lowhorn, Nathan Dane

    The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

  13. Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer

    NASA Astrophysics Data System (ADS)

    Mroczyński, R.; Wachnicki, Ł.; Gierałtowska, S.

    2016-12-01

    In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≍ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≍ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

  14. Tensile behavior of tungsten and tungsten-alloy wires from 1300 to 1600 K

    NASA Technical Reports Server (NTRS)

    Hee, Man Yun

    1988-01-01

    The tensile behavior of a 200-micrometer-diameter tungsten lamp (218CS-W), tungsten + 1.0 atomic percent (a/o) thoria (ST300-W), and tungsten + 0.4 a/o hafnium carbide (WHfC) wires was determined over the temperature range 1300 t0 1600 K at strain rates of 3.3 X 10 to the -2 to 3.3 X 10 to the -5/sec. Although most tests were conducted on as-drawn materials, one series of tests was undertaken on ST300-W wires in four different conditions: as-drawn and vacuum-annealed at 1535 K for 1 hr, with and without electroplating. Whereas heat treatment had no effect on tensile properties, electropolishing significantly increased both the proportional limit and ductility, but not the ultimate tensile strength. Comparison of the behavior of the three alloys indicates that the HfC-dispersed material possesses superior tensile properties. Theoretical calculations indicate that the strength/ductility advantage of WHfC is due to the resistance to recrystallization imparted by the dispersoid.

  15. Surface plasmon-enhanced optical absorption in monolayer MoS2 with one-dimensional Au grating

    NASA Astrophysics Data System (ADS)

    Song, Jinlin; Lu, Lu; Cheng, Qiang; Luo, Zixue

    2018-05-01

    The optical absorption of a composite photonic structure, namely monolayer molybdenum disulfide (MoS2)-covered Au grating, is theoretically investigated using a rigorous coupled-wave analysis algorithm. The enhancement of localized electromagnetic field due to surface plasmon polaritons supported by Au grating can be utilized to enhance the absorption of MoS2. The remarkable enhancement of absorption due to exciton transition can also be realized. When the period of grating is 600 nm, the local absorption of the monolayer MoS2 on Au grating is nearly 7 times higher than the intrinsic absorption due to B exciton transition. A further study reveals that the absorption properties of Au grating can be tailored by altering number of MoS2 layers, changing to a MoS2 nanoribbon array, and inserting a hafnium dioxide (HfO2) spacer. This work will contribute to the design of MoS2-based optical and optoelectronic devices.

  16. Influence of Deformation Mechanisms on the Mechanical Behavior of Metals and Alloys: Experiments, Constitutive Modeling, and Validation

    NASA Astrophysics Data System (ADS)

    Gray, G. T.; Cerreta, E.; Chen, Shuh Rong; Maudlin, P. J.

    2004-06-01

    Jim Williams has made seminal contributions to the field of structure / property relations and its controlling effects on the mechanical behavior of metals and alloys. This talk will discuss experimental results illustrating the role of interstitial content, grain size, texture, temperature, and strain rate on the operative deformation mechanisms, mechanical behavior, and substructure evolution in titanium, zirconium, hafnium, and rhenium. Increasing grain size is shown to significantly decrease the dynamic flow strength of Ti and Zr while increasing work-hardening rates due to an increased incidence of deformation twinning. Increasing oxygen interstitial content is shown to significantly alter both the constitutive response and α-ω shock-induced phase transition in Zr. The influence of crystallographic texture on the mechanical behavior in Ti, Zr, and Hf is discussed in terms of slip system and deformation twinning activity. An example of the utility of incorporation of operative deformation mechanisms into a polycrystalline plasticity constitutive model and validation using Taylor cylinder impact testing is presented.

  17. Unusual hafnium-pyridylamido/ER(n) heterobimetallic adducts (ER(n) = ZnR2 or AlR3).

    PubMed

    Rocchigiani, Luca; Busico, Vincenzo; Pastore, Antonello; Talarico, Giovanni; Macchioni, Alceo

    2014-02-17

    NMR spectroscopy and DFT studies indicate that the Symyx/Dow Hf(IV)-pyridylamido catalytic system for olefin polymerization, [{N(-),N,CNph(-)}HfMe][B(C6F5)4] (1, Nph = naphthyl), interacts with ER(n) (E = Al or Zn, R = alkyl group) to afford unusual heterobimetallic adducts [{N(-),N}HfMe(μ-CNph)(μ-R)ER(n-1)][B(C6F5)4 in which the cyclometalated Nph acts as a bridge between Hf and E. (1)H VT (variable-temperature) EXSY NMR spectroscopy provides direct evidence of reversible alkyl exchanges in heterobimetallic adducts, with ZnR2 showing a higher tendency to participate in this exchange than AlR3. 1-Hexene/ERn competitive reactions with 1 at 240 K reveal that the formation of adducts is strongly favored over 1-hexene polymerization. Nevertheless, a slight increase in the temperature (to >265 K) initiates 1-hexene polymerization. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Chemical compatibility of cartridge materials

    NASA Technical Reports Server (NTRS)

    Wilcox, Roy C.; Zee, R. H.

    1991-01-01

    This twelve month progress report deals with the chemical compatibility of semiconductor crystals grown in zero gravity. Specifically, it studies the chemical compatibility between TZM, a molybdenum alloy containing titanium and zirconium, and WC 103, a titanium alloy containing Niobium and Hafnium, and Gallium arsenide (GaAs) and Cadmium Zinc Tellurite (CdZnTe). Due to the health hazards involved, three approaches were used to study the chemical compatibility between the semiconductor and cartridge materials: reaction retort, thermogravimetric analysis, and bulk cylindrical cartridge containers. A scanning electron microscope with an energy dispersive X-ray analyzer was used to examine all samples after testing. The first conclusion drawn is that reaction rates with TZM were not nearly as great as they were with WC 103. Second, the total reaction between GaAs and WC 103 was almost twice that with TZM. Therefore, even though WC 103 is easier to fabricate, at least half of the cartridge thickness will be degraded if contact is made with one of the semiconductor materials leading to a loss of strength properties.

  19. Calculations with the quasirelativistic local-spin-density-functional theory for high-Z atoms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Guo, Y.; Whitehead, M.A.

    1988-10-01

    The generalized-exchange local-spin-density-functional theory (LSD-GX) with relativistic corrections of the mass velocity and Darwin terms has been used to calculate statistical total energies for the neutral atoms, the positive ions, and the negative ions for high-Z elements. The effect of the correlation and relaxation correction on the statistical total energy is discussed. Comparing the calculated results for the ionization potentials and electron affinities for the atoms (atomic number Z from 37 to 56 and 72 to 80) with experiment, shows that for the atoms rubidium to barium both the LSD-GX and the quasirelativistic LSD-GX, with self-interaction correction, Gopinathan, Whitehead, andmore » Bogdanovic's Fermi-hole parameters (Phys. Rev. A 14, 1 (1976)), and Vosko, Wilk, and Nusair's correlation correction (Can. J. Phys. 58, 1200 (1980)), are very good methods for calculating ionization potentials and electron affinities. For the atoms hafnium to mercury the relativistic effect has to be considered.« less

  20. Elevated-Temperature Deformation Properties of a HfC Modified Ti-48Al-2Mn-2Nb Matrix Particulate Composite

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Farmer, S. C.; Bors, D. A.; Ray, R.; Lee, D. S.

    1994-01-01

    Rapid solidification techniques in combination with HIPing have been used to produce Ti-48Al-2Mn-2Nb and a Ti-48Al-2Mn-2Nb+15 wt% HfC composite. While the composite does contain several second phases within the gamma + alpha(sub 2) matrix, none was identified to be HfC. The elevated-temperature properties were determined by constant velocity compression and constant load tensile testing in air between 1000 and 1173 K. Such testing indicated that the elevated temperature strengths of the HfC-modified aluminide was superior to those of the unreinforced matrix with the best 1100 K temperature slow strain rate properties for both materials being achieved after high-temperature annealing prior to testing. Examination of the microstructures after deformation in combination with the measured stress exponents and activation energies suggest that creep resistance of the HfC-modified form is due to solid-solution strengthening from carbon and hafnium rather than the presence of second phases.

  1. Preparation of plutonium-bearing ceramics via mechanically activated precursor

    NASA Astrophysics Data System (ADS)

    Chizhevskaya, S. V.; Stefanovsky, S. V.

    2000-07-01

    The problem of excess weapons plutonium disposition is suggested to be solved by means of its incorporation in stable ceramics with high chemical durability and radiation resistivity. The most promising host phases for plutonium as well as uranium and neutron poisons (gadolinium, hafnium) are zirconolite, pyrochlore, zircon, zirconia [1,2], and murataite [3]. Their production requires high temperatures and a fine-grained homogeneous precursor to reach final waste form with high quality and low leachability. Currently various routes to homogeneous products preparation such as sol-gel technology, wet-milling, and grinding in a ball or planetary mill are used. The best result demonstrates sol-gel technology but this route is very complicated. An alternative technology for preparation of ceramic precursors is the treatment of the oxide batch with high mechanical energy [4]. Such a treatment produces combination of mechanical (fine milling with formation of various defects, homogenization) and chemical (split bonds with formation of active centers—free radicals, ion-radicals, etc.) effects resulting in higher reactivity of the activated batch.

  2. Directional Emission from Dielectric Leaky-Wave Nanoantennas

    NASA Astrophysics Data System (ADS)

    Peter, Manuel; Hildebrandt, Andre; Schlickriede, Christian; Gharib, Kimia; Zentgraf, Thomas; Förstner, Jens; Linden, Stefan

    2017-07-01

    An important source of innovation in nanophotonics is the idea to scale down known radio wave technologies to the optical regime. One thoroughly investigated example of this approach are metallic nanoantennas which employ plasmonic resonances to couple localized emitters to selected far-field modes. While metals can be treated as perfect conductors in the microwave regime, their response becomes Drude-like at optical frequencies. Thus, plasmonic nanoantennas are inherently lossy. Moreover, their resonant nature requires precise control of the antenna geometry. A promising way to circumvent these problems is the use of broadband nanoantennas made from low-loss dielectric materials. Here, we report on highly directional emission from active dielectric leaky-wave nanoantennas made of Hafnium dioxide. Colloidal semiconductor quantum dots deposited in the nanoantenna feed gap serve as a local light source. The emission patterns of active nanoantennas with different sizes are measured by Fourier imaging. We find for all antenna sizes a highly directional emission, underlining the broadband operation of our design.

  3. Oxidation Behavior of HfB2-SiC Materials in Dissociated Environments

    NASA Technical Reports Server (NTRS)

    Ellerby, Don; Irby, Edward; Johnson, Sylvia M.; Beckman, Sarah; Gusman, Michael; Gasch, Matthew

    2002-01-01

    Hafnium diboride based materials have shown promise for use in extremely high temperature applications, such as sharp leading edges on future reentry vehicles. During reentry, the oxygen and nitrogen in the atmosphere are dissociated by the shock layer ahead of the sharp leading edge such that surface reactions are determined by reactions of monatomic oxygen and nitrogen rather than O2, and N2. Simulation of the reentry environment on the ground requires the use of arc jet (plasma jet) facilities that provide monatomic species and are the closest approximation to actual flight conditions. Simple static or flowing oxidation studies under ambient pressures and atmospheres are not adequate to develop an understanding of a materials behavior in flight. Arc jet testing is required to provide the appropriate stagnation pressures, heat fluxes, enthalpies, heat loads and atmospheres encountered during flight. This work looks at the response of HfB2/SiC materials exposed to various simulated reentry environments.

  4. Pressure-dependence of the phase transitions and thermal expansion in zirconium and hafnium pyrovanadate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gallington, Leighanne C.; Hester, Brett R.; Kaplan, Benjamin S.

    Low or negative thermal expansion (NTE) has been previously observed in members of the ZrP 2O 7 family at temperatures higher than their order-disorder phase transitions. The thermoelastic properties and phase behavior of the low temperature superstructure and high temperature negative thermal expansion phases of ZrV 2O 7 and HfV 2O 7 were explored via in situ variable temperature/pressure powder x-ray diffraction measurements. The phase transition temperatures of ZrV 2O 7 and HfV 2O 7 exhibited a very strong dependence on pressure (~700 K GPa), with moderate compression suppressing the formation of their NTE phases below 513 K. Compression alsomore » reduced the magnitude of the coefficients of thermal expansion in both the positive and negative thermal expansion phases. Additionally, the high temperature NTE phase of ZrV 2O 7 was found to be twice as stiff as the low temperature positive thermal expansion superstructure (24 and 12 GPa respectively).« less

  5. Zirconium, hafnium, and rare earth element partition coefficients for ilmenite and other minerals in high-Ti lunar mare basalts - An experimental study

    NASA Technical Reports Server (NTRS)

    Mckay, G.; Wagstaff, J.; Yang, S.-R.

    1986-01-01

    Partition coefficients were determined for Gd, Lu, Hf and Zr among ilmenite, armalcolite, and synthetic high-Ti mare basaltic melts at temperatures from 1122 deg to 1150 deg, and at oxygen fugacities of IW x 10 exp 0.5, by in situ analysis with an electron microprobe, using samples doped to present concentration levels. Coefficients for Zr were also measured for samples containing 600-1600 ppm Zr using this microprobe. In addition, coefficients were determined for Hf and Zr between chromian ulvospinel and melt, for Hf between pigeonite and melt, and for Lu between olivine and melt by microprobe analysis of samples doped to present levels. Values measured using the microprobe were in agreement with the values measured by analyzing mineral separates from the same run products by isotope dilution. Coefficient values for ilmenite are less than 0.01 for the LREE, are around 0.1 for the HREE, and are several times greater than this for Zr and Hf.

  6. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.

    PubMed

    Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

    2017-12-01

    Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al 2 O 3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a , which can explain the experimental observation. A high-field effect mobility of 9.4 cm 2 /Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10 7 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

  7. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

    2017-01-01

    Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

  8. Electric field cycling behavior of ferroelectric hafnium oxide.

    PubMed

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  9. Fluorometric determination of zirconium in minerals

    USGS Publications Warehouse

    Alford, W.C.; Shapiro, L.; White, C.E.

    1951-01-01

    The increasing use of zirconium in alloys and in the ceramics industry has created renewed interest in methods for its determination. It is a common constituent of many minerals, but is usually present in very small amounts. Published methods tend to be tedious, time-consuming, and uncertain as to accuracy. A new fluorometric procedure, which overcomes these objections to a large extent, is based on the blue fluorescence given by zirconium and flavonol in sulfuric acid solution. Hafnium is the only element that interferes. The sample is fused with borax glass and sodium carbonate and extracted with water. The residue is dissolved in sulfuric acid, made alkaline with sodium hydroxide to separate aluminum, and filtered. The precipitate is dissolved in sulfuric acid and electrolysed in a Melaven cell to remove iron. Flavonol is then added and the fluorescence intensity is measured with a photo-fluorometer. Analysis of seven standard mineral samples shows excellent results. The method is especially useful for minerals containing less than 0.25% zirconium oxide.

  10. Carbide and carbonitride surface treatment method for refractory metals

    DOEpatents

    Meyer, Glenn A.; Schildbach, Marcus A.

    1996-01-01

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system (10) including a reaction chamber (14), a source of elemental carbon (17), a heating subassembly (20) and a source of reaction gases (23). Alternative methods of providing the elemental carbon (17) and the reaction gases (23) are provided, as well as methods of supporting the metal part (12), evacuating the chamber (14) with a vacuum subassembly (18) and heating all of the components to the desired temperature.

  11. Measurement of the natHf(d,x)177Ta cross section and impact of erroneous gamma-ray intensities

    NASA Astrophysics Data System (ADS)

    Simonelli, F.; Abbas, K.; Bulgheroni, A.; Pommé, S.; Altzitzoglou, T.; Suliman, G.

    2012-08-01

    In this work, excitation functions for deuteron-induced reactions on natural hafnium have been measured in the energy range 7-17 MeV, using the stacked-foil technique. Particular attention has been paid to the reaction natHf(d,x)177Ta, because reported γ-ray intensities have been found to be in disagreement with previously published data. This discrepancy is due to an error in the 2003 ENSDF absolute γ-ray intensities of 177Hf following the decay of 177Ta, which are about a factor of three higher compared to other available data. As a consquence, some peer reviewed papers reporting on natHf(d,x)177Ta, and also on natHf(p,x) 177Ta and natW(p,x) 177Ta, need to be reviewed. An upcoming re-evaluation of the 177Ta decay data shows new significant changes in the absolute γ-ray intensities, which in turn will affect again the 177Ta producing cross sections.

  12. Single Crystal Fibers of Yttria-Stabilized Cubic Zirconia with Ternary Oxide Additions

    NASA Technical Reports Server (NTRS)

    Ritzert, F. J.; Yun, H. M.; Miner, R. V.

    1997-01-01

    Single crystal fibers of yttria (Y2O3)-stabilized cubic zirconia, (ZrO2) with ternary oxide additions were grown using the laser float zone fiber processing technique. Ternary additions to the ZrO2-Y2O3 binary system were studied aimed at increasing strength while maintaining the high coefficient of thermal expansion of the binary system. Statistical methods aided in identifying the most promising ternary oxide candidate (Ta2O5, Sc2O3, and HfO2) and optimum composition. The yttria, range investigated was 14 to 24 mol % and the ternary oxide component ranged from 1 to 5 mol %. Hafnium oxide was the most promising ternary oxide component based on 816 C tensile strength results and ease of fabrication. The optimum composition for development was 81 ZrO2-14 Y203-5 HfO2 based upon the same elevated temperature strength tests. Preliminary results indicate process improvements could improve the fiber performance. We also investigated the effect of crystal orientation on strength.

  13. Pulse-shape discrimination with Cs2HfCl6 crystal scintillator

    NASA Astrophysics Data System (ADS)

    Cardenas, C.; Burger, A.; Goodwin, B.; Groza, M.; Laubenstein, M.; Nagorny, S.; Rowe, E.

    2017-10-01

    The results of investigation into cesium hafnium chloride (Cs2HfCl6) scintillating crystals as a promising detector to search for rare nuclear processes occurring in Hf isotopes is reported. The light output, quenching factor, and pulse-shape characteristics have been investigated at room temperature. The scintillation response of the crystal induced by α-particles and γ-quanta were studied to determine possibility of particle discrimination. Using the optimal filter method we obtained clear separation between signals with a factor of merit (FOM) = 9.3. This indicates that we are able to fully separate signals originating from α-particles and γ-quanta. Similar fruitful discrimination power was obtained by applying the mean time method (FOM = 7) and charge integration method (FOM = 7.5). The quenching factor for collimated 4 MeV α-particles is found to be 0.36, showing that α-particles generate more than a third of the light compared to γ-quanta at the same energy.

  14. Activation cross-sections of proton induced reactions on natHf in the 38-65 MeV energy range: Production of 172Lu and of 169Yb

    NASA Astrophysics Data System (ADS)

    Tárkányi, F.; Hermanne, A.; Ditrói, F.; Takács, S.; Ignatyuk, A. V.

    2018-07-01

    In the frame of a systematical study of light ion induced nuclear reactions on hafnium, activation cross sections for proton induced reactions were investigated. Excitation functions were measured in the 38-65 MeV energy range for the natHf(p,xn)180g,177,176,175,173Ta, natHf(p,x)180m,179m,175,173,172,171Hf, 177g,173,172,171,170,169Lu and natHf(p,x)169Yb reactions by using the activation method, combining stacked foil irradiation and off line gamma ray spectroscopy. The experimental results are compared with earlier results in the overlapping energy range, and with the theoretical predictions of the ALICE IPPE and EMPIRE theoretical codes and of the TALYS code reported in the TENDL-2015 and TENDL-2017 libraries. The production routes of 172Lu (and its parent 172Hf) and of 169Yb are reviewed.

  15. Hafnium isotope results from mid-ocean ridges and Kerguelen.

    USGS Publications Warehouse

    Patchett, P.J.

    1983-01-01

    176Hf/177Hf ratios are presented for oceanic volcanic rocks representing both extremes of the range of mantle Hf-Nd-Sr isotopic variation. Hf from critical mid-ocean ridge basalts shows that 176Hf/177Hf does indeed have a greater variability than 143Nd/144Nd and 87Sr/86Sr in the depleted mantle. This extra variation is essentially of a random nature, and can perhaps be understood in terms of known Rb/Sr-Sm/Nd-Lu/Hf fractionation relationships. At the other extreme of mantle isotopic compositions, 176Hf/177Hf ratios for igneous rocks from the Indian Ocean island of Kerguelen show a closely similar variation to published 143Nd/144Nd ratios for the same samples. Comparison of Hf-Nd-Sr isotopic relatonships for Tristan da Cunha, Kerguelen and Samoa reveals divergences in the mantle array for ocean-island magma sources, and perhaps suggests that these irregularities are largely the result of an extra component of 87Sr/86Sr variation.-G.R.

  16. Hafnium isotope results from mid-ocean ridges and Kerguelen

    USGS Publications Warehouse

    Jonathan, Patchett P.

    1983-01-01

    176Hf/177Hf ratios are presented for oceanic volcanics representing both extremes of the range of mantle HfNdSr isotopic variation. Hf from critical mid-ocean ridgebasalts shows that 176Hf/177Hf does indeed have a greater variability than 143Nd/144Nd and 87Sr/86Sr in the depleted mantle. This extra variation is essentially of a random nature, and can perhaps be understood in terms of known Rb/SrSm/NdLu/Hf fractionation relationships. At the other extreme of mantle isotopic composition, 176Hf/177Hf ratios for igneous rocks from the Indian Ocean island of Kerguelen show a closely similar variation to published 143Nd/144Nd ratios for the same samples. Comparison of HfNdSr c relationships for Tristan da Cunha, Kerguelen and Samoa reveals divergences in the mantle array for ocean island magma sources, and perhaps suggests that these irregularities are largely the result of an extra component of 87Sr/86Sr variation. ?? 1983.

  17. Hf-Nd Isotopic Correlation in the Deccan Flood Basalt Province

    NASA Astrophysics Data System (ADS)

    Saha, A.; Basu, A. R.; Barling, J.; Anbar, A. D.; Hooper, P. R.

    2001-12-01

    Hafnium isotopes along with other isotopic and geochemical characteristics, including incompatible trace elements, of several of the lower formations of the Deccan Flood Basalt Province were analyzed to characterize petrogenesis of different tholeiitic lava suites, especially with respect to potential mantle and crustal sources. The rare earth elements of the different formations (from top to bottom- Mahabaleshwar, Ambenali, Bushe, Khandala and Neral) all show an LREE-enriched signature, concentrations varying between 30 to 60 times chondrite for La. (La/Lu)n values range from 4.1 to above 8 with the exception of Ambenali, which has a less LREE-enriched signature with (La/Lu)n values ranging between 3.6 to 5.3. Hafnium isotopic data of the lower formations of the Deccan show initial \\epsilonHf(T) values covering a range from -3 to -28. 176Lu/177Hf varies between 0.20 to 0.70. f(Lu/Hf) varies within a narrow range, between -0.90 to -0.97 while f(Sm/Nd) ranges from -0.84 to -0.86. Bushe gives the lowest range of \\epsilonHf(T) from -21 to -28 with the corresponding \\epsilonNd(T) varying between -4.0 and -16.9, while Khandala for almost the same range of neodymium isotopic values has \\epsilonHf(T) between -11 and -15. The \\epsilonHf(T) values of Neral is in between those of Khandala and Bushe, around -19. Ambenali, has the narrowest range with \\epsilonHf(T) of -3 and \\epsilonNd(T) between 3 and 5. The Ambenali suite reflects the least contaminated of the Deccan suite of lavas as analyzed here and previously confirmed by other isotopic studies. In Hf-Nd isotope correlation plot, the lower Deccan formations of Neral, Khandala and Bushe define individual subparallel arrays that are shallower than the oceanic basalt array and the overall terrestrial array, including the crustal array, although the bulk of the lower formation data fall within the crustal array of Vervoort et al (1999). From these subparallel Hf-Nd arrays, it is evident that the other end-members contributing to the Ambenali-type source magmas are distinctly different for each of these lava suites, and can be characterized by their \\epsilonHf(T) values as mentioned above. Although these end-members are discernible in \\epsilonNd vs \\epsilonSr plot (e.g., Peng et al, 1994) of previous studies, our new Hf-isotopic data provide clear evidence of major contributions from the ancient Indian continental crustal reservoirs in the petrogenesis of the lower lava formations of the Deccan Flood Basalt Province.

  18. Continental sedimentary processes decouple Nd and Hf isotopes

    NASA Astrophysics Data System (ADS)

    Garçon, Marion; Chauvel, Catherine; France-Lanord, Christian; Huyghe, Pascale; Lavé, Jérôme

    2013-11-01

    The neodymium and hafnium isotopic compositions of most crustal and mantle rocks correlate to form the "Terrestrial Array". However, it is now well established that whereas coarse detrital sediments follow this trend, fine-grained oceanic sediments have high Hf ratios relative to their Nd isotopic ratios. It remains uncertain whether this "decoupling" of the two isotopic systems only occurs in the oceanic environment or if it is induced by sedimentary processes in continental settings. In this study, the hafnium and neodymium isotopic compositions of sediments in large rivers is expressly used to constrain the behavior of the two isotopic systems during erosion and sediment transport from continent to ocean. We report major and trace element concentrations together with Nd and Hf isotopic compositions of bedloads, suspended loads and river banks from the Ganges River and its tributaries draining the Himalayan Range i.e. the Karnali, the Narayani, the Kosi and the Marsyandi Rivers. The sample set includes sediments sampled within the Himalayan Range in Nepal, at the Himalayan mountain front, and also downstream on the floodplain and at the outflow of the Ganges in Bangladesh. Results show that hydrodynamic sorting of minerals explains the entire Hf isotopic range, i.e. more than 10 εHf units, observed in the river sediments but does not affect the Nd isotopic composition. Bedloads and bank sediments have systematically lower εHf values than suspended loads sampled at the same location. Coarse-grained sediments lie below or on the Terrestrial Array in an εHf vs. εNd diagram. In contrast, fine-grained sediments, including most of the suspended loads, deviate from the Terrestrial Array toward higher εHf relative to their εNd, as is the case for oceanic terrigenous clays. The observed Nd-Hf decoupling is explained by mineralogical sorting processes that enrich bottom sediments in coarse and dense minerals, including unradiogenic zircons, while surface sediments are enriched in fine material with radiogenic Hf signatures. The data also show that Nd-Hf isotopic decoupling increases with sediment transport in the floodplain to reach its maximum at the river mouth. This implies that the Nd-Hf isotopic decoupling observed in worldwide oceanic clays and river sediments is likely to have the same origin. Finally, we estimated the Nd-Hf isotopic composition of the present-day mantle if oceanic sediments had never been subducted and conclude that the addition of oceanic sediments with their anomalous Nd-Hf isotopic compositions has slowly shifted the composition of the Earth's mantle towards more radiogenic Hf values through time.

  19. Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

    NASA Astrophysics Data System (ADS)

    Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

    2018-04-01

    This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical fiber. Thanks to such an overlay the sensor proved to be long-lasting resistant when exposed to alkaline environment with a pH 9. Thereby, it also proved that it has a potential to be repeatedly reused as a regenerable optical fiber biosensor.

  20. Synthesis of Hf 8O 7, a new binary hafnium oxide, at high pressures and high temperatures

    DOE PAGES

    Bayarjargal, L.; Morgenroth, W.; Schrodt, N.; ...

    2017-01-23

    In this paper, two binary phases in the system Hf-O have been synthesized at pressures between 12 and 34 GPa and at temperatures up to 3000 K by reacting Hf with HfO 2 using a laser-heated diamond anvil cell. In situ X-ray diffraction in conjunction with density functional theory calculations has been employed to characterize a previously unreported tetragonal Hf 8O 7 phase. This phase has a structure which is based on an fcc Hf packing with oxygen atoms occupying octahedral interstitial positions. Its predicted bulk modulus is 223(1) GPa. The second phase has a composition close to Hf 6O,more » where oxygen atoms occupy octahedral interstitial sites in an hcp Hf packing. Its experimentally determined bulk modulus is 128(30) GPa. Finally, the phase diagram of Hf metal was further constrained at high pressures and temperatures, where we show that α-Hf transforms to β-Hf around 2160(150) K and 18.2 GPa and β-Hf remains stable up to at least 2800 K at this pressure.« less

  1. Single-source-precursor synthesis of hafnium-containing ultrahigh-temperature ceramic nanocomposites (UHTC-NCs).

    PubMed

    Yuan, Jia; Hapis, Stefania; Breitzke, Hergen; Xu, Yeping; Fasel, Claudia; Kleebe, Hans-Joachim; Buntkowsky, Gerd; Riedel, Ralf; Ionescu, Emanuel

    2014-10-06

    Amorphous SiHfBCN ceramics were prepared from a commercial polysilazane (HTT 1800, AZ-EM), which was modified upon reactions with Hf(NEt2)4 and BH3·SMe2, and subsequently cross-linked and pyrolyzed. The prepared materials were investigated with respect to their chemical and phase composition, by means of spectroscopy techniques (Fourier transform infrared (FTIR), Raman, magic-angle spinning nuclear magnetic resonance (MAS NMR)), as well as X-ray diffraction (XRD) and transmission electron microscopy (TEM). Annealing experiments of the SiHfBCN samples in an inert gas atmosphere (Ar, N2) at temperatures in the range of 1300-1700 °C showed the conversion of the amorphous materials into nanostructured UHTC-NCs. Depending on the annealing atmosphere, HfC/HfB2/SiC (annealing in argon) and HfN/Si3N4/SiBCN (annealing in nitrogen) nanocomposites were obtained. The results emphasize that the conversion of the single-phase SiHfBCN into UHTC-NCs is thermodynamically controlled, thus allowing for a knowledge-based preparative path toward nanostructured ultrahigh-temperature stable materials with adjusted compositions.

  2. Interactions of hydrogen with amorphous hafnium oxide

    NASA Astrophysics Data System (ADS)

    Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

    2017-02-01

    We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

  3. Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

    NASA Astrophysics Data System (ADS)

    Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

    2007-12-01

    We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

  4. Raman scattering in HfxZr1-xO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Robinson, Richard D.; Tang, Jing; Steigerwald, Michael L.; Brus, Louis E.; Herman, Irving P.

    2005-03-01

    Raman spectroscopy demonstrates that ˜5nm dimension HfxZr1-xO2 nanocrystals prepared by a nonhydrolytic sol-gel synthesis method are solid solutions of hafnia and zirconia, with no discernable segregation within the individual nanoparticles. Zirconia-rich particles are tetragonal and ensembles of hafnia-rich particles show mixed tetragonal/monoclinic phases. Sintering at 1200 °C produces larger particles (20-30 nm) that are monoclinic. A simple lattice dynamics model with composition-averaged cation mass and scaled force constants is used to understand how the Raman mode frequencies vary with composition in the tetragonal HfxZr1-xO2 nanoparticles. Background luminescence from these particles is minimized after oxygen treatment, suggesting possible oxygen defects in the as-prepared particles. Raman scattering is also used to estimate composition and the relative fractions of tetragonal and monoclinic phases. In some regimes there are mixed phases, and Raman analysis suggests that in these regimes the tetragonal phase particles are relatively rich in zirconium and the monoclinic phase particles are relatively rich in hafnium.

  5. Electrical conductivity and Hf 4+ ion substitution range in NaSICON system

    NASA Astrophysics Data System (ADS)

    Essoumhi, A.; Favotto, C.; Mansori, M.; Ouzaouit, K.; Satre, P.

    2007-03-01

    In this paper, we present the synthesis and characterizations of NaSICON-type ionic conducting ceramics of the general formula Na 1+ xM 1.775Si x-0.9P 3.9- xO 12 with 1.8 ≤ x ≤ 2.2 and M = Zr or Hf. The effect of the total substitution of zirconium by hafnium on electric properties has been studied. The various compositions were prepared by using the sol-gel method and the synthesized precursors were characterized by coupled DTA-TG. The oxides obtained after pyrolysis of the precursors were identified by X-ray diffraction. A sintering study by thermodilatometry permits to select the best thermal cycle adapted to our ceramics. Furthermore, the electric conductivity of the sintered ceramic samples was characterized by complex impedance spectroscopy. These results show that ceramics containing Zr synthesized by soft method, present a higher total conductivity than those obtained in literature (to be around 10 -4 S cm -1). The total substitution of Zr by Hf still improves this conductivity for some compositions.

  6. Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

    2015-10-15

    Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

  7. Characterization of a SiC MIS Schottky diode as RBS particle detector

    NASA Astrophysics Data System (ADS)

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  8. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    NASA Astrophysics Data System (ADS)

    Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

    2015-08-01

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

  9. Finite element analysis of hollow out-of-plane HfO2 microneedles for transdermal drug delivery applications.

    PubMed

    Zhang, Yong-Hua; A Campbell, Stephen; Karthikeyan, Sreejith

    2018-02-17

    Transdermal drug delivery (TDD) based on microneedles is an excellent approach due to its advantages of both traditional transdermal patch and hypodermic syringes. In this paper, the fabrication method of hollow out-of-layer hafnium oxide (HfO 2 ) microneedles mainly based on deep reactive ion etching of silicon and atomic layer deposition of HfO 2  is described, and the finite element analysis of the microneedles based on ANSYS software is also presented. The fabrication process is simplified by using a single mask. The finite element analysis of a single microneedle shows that the flexibility of the microneedles can be easily adjusted for various applications. The finite element analysis of a 3 × 3 HfO 2 microneedle array applied on the skin well explains the "bed of nail" effect, i.e., the skin is not liable to be pierced when the density of microneedles in array increases. The presented research work here provides useful information for design optimization of HfO 2 microneedles used for TDD applications.

  10. Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

    2018-06-01

    The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

  11. The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing.

    PubMed

    Willinger, Marc-Georg; Neri, Giovanni; Bonavita, Anna; Micali, Giuseppe; Rauwel, Erwan; Herntrich, Tobias; Pinna, Nicola

    2009-05-21

    A new atomic layer deposition (ALD) process was applied for the uniform coating of carbon nanotubes with a number of transition-metal oxide thin films (vanadium, titanium, and hafnium oxide). The presented approach is adapted from non-aqueous sol-gel chemistry and utilizes metal alkoxides and carboxylic acids as precursors. It allows the coating of the inner and outer surface of the tubes with a highly conformal film of controllable thickness and hence, the production of high surface area hybrid materials. The morphology and the chemical composition as well as the high purity of the films are evidenced through a combination of electron microscopic and electron-energy-loss spectrometric techniques. Furthermore, in order to highlight a possible application of the obtained hybrids, the electrical and sensing properties of resistive gas sensors based on hybrid vanadium oxide-coated carbon nanotubes (V2O4-CNTs) are reported and the effect of thermal treatment on the gas sensing properties is studied.

  12. Isospecific propylene polymerization with in situ generated bis(phenoxy-amine)zirconium and hafnium single site catalysts.

    PubMed

    Makio, Haruyuki; Prasad, Aitha Vishwa; Terao, Hiroshi; Saito, Junji; Fujita, Terunori

    2013-07-07

    Bis(phenoxy-imine) Zr and Hf complexes were activated with (i)Bu3Al or (i)Bu2AlH in conjunction with Ph3CB(C6F5)4 and tested as catalysts for propylene polymerization with emphasis on the enantioselectivity of the isospecific species and the single site polymerization characteristics. The isoselective species was identified as the in situ generated bis(phenoxy-amine) complex whose isoselectivity was sensitive to subtle changes in ligand structure. By employing specific substituents at certain key positions the isotacticity reached an extremely high level comparable to high-end commercial isotactic polypropylenes (Tm > 160 °C). Single site polymerization characteristics depended upon the efficiency and selectivity of the in situ imine reduction which is sensitive to the substituent on the imine nitrogen and the reaction conditions. By using (i)Bu2AlH as a reducing agent, quantitative imine reduction can be achieved with a stoichiometric amount of the reducing agent. This lower alkylaluminum loading is beneficial for the catalyst and significantly enhances the polymerization activity and the molecular weight of the resultant polymer.

  13. High resolution laser spectroscopy of the [13.8]0.5 - X2Δ3/2 and [14.2]1.5 - X2Δ3/2 transitions of hafnium monofluoride (HfF)

    NASA Astrophysics Data System (ADS)

    Adam, A. G.; Esson, L. M.; Linton, C.; Smith, A. M.; Tokaryk, D. W.

    2018-07-01

    Laser-induced fluorescence (LIF) spectra of the (0, 0) and (1, 0) bands of the [13.8]0.5 - X2Δ3/2 and [14.2]1.5 - X2Δ3/2 transitions of HfF have been obtained at high resolution (∼120 MHz) using a laser ablation source. Spectra of all five isotopologues, from 180HfF to 176HfF have been clearly resolved and the two most abundant, 180HfF and 178HfF, were chosen for analysis. The rotational levels of the [13.8]0.5 state showed clear Ω - doubling closely resembling that of a 2Σ state in the v = 0 level. Irregularity in the doubling in the v = 1 level and in the isotope shift indicated a strong perturbation affecting this level. The final fit included all the previously analysed bands in the visible region and the doubling of all the Ω = 0.5 states and the isotope effect are examined and discussed.

  14. Advances in Ultra High Temperature Ceramics for Hot Structures

    NASA Astrophysics Data System (ADS)

    Scatteia, Luigi; Monteverde, Federico; Alfano, Davide; Cantoni, Stefania

    The objective of this paper is to describe the current state of the art of the research on Ultra High Temperature Ceramic materials with particular reference to their space applications, and also to report on the activities performed on UHTC in the past decade by the Italian Aerospace Research Centre in the specific technological field of structural thermal protection systems. Within several internal research project, various UHTC composition, mainly based upon Zirconium Diboride and Hafnium Diboride with added secondary phases and sintering aid were examined characterized in their mechanical properties and oxidation resistance. Two main composition were selected as the most promising for hot structure manufacturing: these materials were extensively characterized in order to obtain a comprehensive database of properties to feed the thermomechanical design of prototype hot structures. Technological demonstrators were manufactured by hot pressing followed by further fine machining with Electrical Discharge methods, and then tested at high temperature for long times in a plasma torch facility. The main outstanding results obtained are discussed in this paper. Future outlooks related to the UHTC technology and its further development are also provided.

  15. Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

    NASA Astrophysics Data System (ADS)

    Shishodia, Manmohan Singh; Pathania, Pankaj

    2018-04-01

    Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

  16. Octahedral deformations and cationic displacements in the ferroelectric PbHf(0.8)Ti(0.2)O(3): a neutron powder diffraction study from 10 to 770 K

    PubMed

    Muller; Baudour; Bedoya; Bouree; Soubeyroux; Roubin

    2000-02-01

    Neutron powder diffraction data, collected over the temperature range 10-770 K, have been analysed in order to make a detailed characterization of the sequence of phase transitions occurring in the Hf-rich ferroelectric PbHf(0.8)Ti(0.2)O3, titanium hafnium lead oxide. Over the whole temperature range this compound undergoes two phase transitions, which involve cationic displacements and octahedral deformations (tilt and/or distortion) leading to strongly distorted perovskite-type structures. The first transition appears around 415 K between two ferroelectric rhombohedral phases: a low-temperature nonzero-tilt phase F(RL) (space group R3c) and an intermediate zero-tilt phase FRH (space group R3m). The second one, detected around 520 K, is associated with a ferroelectric to-paraelectric transition between the FRH phase and the Pc cubic phase (space group Pm3m). From high-resolution neutron powder diffraction data (diffractometer 3T2-LLB, Saclay, France, lambda = 1.2251 A), the crystallographic structure of the three successive phases has been accurately determined at the following temperatures: T = 10 K (FRL): space group R3c, Z = 6, a(hex) = 5.7827 (1), c(hex) = 14.2702 (4) A, V(hex) = 413.26 (2) A3; T = 150 K (F(RL)): space group R3c, Z = 6, a(hex) = 5.7871 (1), C(hex) = 14.2735 (4) A, V(hex) = 413.98 (3) A3; T = 290 K (FRL): space group R3c, Z = 6, a(hex) = 5.7943 (1), C(hex) = 14.2742 (5) A, V(hex) = 415.04 (3) A3; T = 440 K (F(RH)): space group R3c, Z = 6, a(hex) = 5.8025 (1), c(hex) = 14.2648 (4) A, V(hex) = 415.94 (3) A3; T = 520 K (Pc): space group Pm3m, Z = 1, a(cub) = 4.1072 (2) A, V(cub) = 69.29 (1) A3. In addition, a neutron powder thermodiffractometry experiment, performed between 290 and 770 K (diffractometer D1B-ILL, Grenoble, France, lambda = 2.533 A), has been used to study in situ the temperature-induced phase transitions. From sequential Rietveld refinements, the temperature dependence of the cation displacements and the rotation and/or distortion of oxygen octahedra was derived.

  17. Hybrid molecular dynamics simulation for plasma induced damage analysis

    NASA Astrophysics Data System (ADS)

    Matsukuma, Masaaki

    2016-09-01

    In order to enable further device size reduction (also known as Moore's law) and improved power performance, the semiconductor industry is introducing new materials and device structures into the semiconductor fabrication process. Materials now include III-V compounds, germanium, cobalt, ruthenium, hafnium, and others. The device structure in both memory and logic has been evolving from planar to three dimensional (3D). One such device is the FinFET, where the transistor gate is a vertical fin made either of silicon, silicon-germanium or germanium. These changes have brought renewed interests in the structural damages caused by energetic ion bombardment of the fin sidewalls which are exposed to the ion flux from the plasma during the fin-strip off step. Better control of the physical damage of the 3D devices requires a better understanding of the damage formation mechanisms on such new materials and structures. In this study, the damage formation processes by ion bombardment have been simulated for Si and Ge substrate by Quantum Mechanics/Molecular Mechanics (QM/MM) hybrid simulations and compared to the results from the classical molecular dynamics (MD) simulations. In our QM/MM simulations, the highly reactive region in which the structural damage is created is simulated with the Density Functional based Tight Binding (DFTB) method and the region remote from the primary region is simulated using classical MD with the Stillinger-Weber and Moliere potentials. The learn on the fly method is also used to reduce the computational load. Hence our QM/MM simulation is much faster than the full QC-MD simulations and the original QM/MM simulations. The amorphous layers profile simulated with QM/MM have obvious differences in their thickness for silicon and germanium substrate. The profile of damaged structure in the germanium substrate is characterized by a deeper tail then in silicon. These traits are also observed in the results from the mass selected ion beam experiments. This observed damage profile dependence on species and substrate cannot be reproduced using classical MD simulations. While the Moliere potential is convenient to describe the interactions between halogens and other atoms, more accurate interatomic modeling such as DFTB method which takes the molecular orbitals into account should be utilized to make the simulations more realistic. Based on the simulations results, the damage formation scenario will be discussed.

  18. Draft critical mineral list—Summary of methodology and background information—U.S. Geological Survey technical input document in response to Secretarial Order No. 3359

    USGS Publications Warehouse

    Fortier, Steven M.; Nassar, Nedal T.; Lederer, Graham W.; Brainard, Jamie; Gambogi, Joseph; McCullough, Erin A.

    2018-02-16

    Pursuant to the Presidential Executive Order (EO) No. 13817, “A Federal Strategy to Ensure Secure and Reliable Supplies of Critical Minerals,” the Secretary of the Interior, in coordination with the Secretary of Defense, and in consultation with the heads of other relevant executive departments and agencies, was tasked with developing and submitting a draft list of minerals defined as “critical minerals” to the Federal Register within 60 days of the issue of the EO (December 20, 2017).Based on an analysis by the U.S. Geological Survey and other U.S. Government agencies, using multiple criteria, 35 minerals or mineral material groups have been identified that are currently (February 2018) considered critical. These include the following: aluminum (bauxite), antimony, arsenic, barite, beryllium, bismuth, cesium, chromium, cobalt, fluorspar, gallium, germanium, graphite (natural), hafnium, helium, indium, lithium, magnesium, manganese, niobium, platinum group metals, potash, rare earth elements group, rhenium, rubidium, scandium, strontium, tantalum, tellurium, tin, titanium, tungsten, uranium, vanadium, and zirconium. The categorization of minerals as critical may change during the course of the review process and is thus provisional.

  19. Quinary metallic glass alloys

    DOEpatents

    Lin, Xianghong; Johnson, William L.

    1998-01-01

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf).sub.a (Al,Zn).sub.b (Ti,Nb).sub.c (Cu.sub.x Fe.sub.y (Ni,Co).sub.z).sub.d wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d.multidot.y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  20. Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

    NASA Astrophysics Data System (ADS)

    Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

    2018-04-01

    Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

  1. CHARACTERISTICS OF ANODIC AND CORROSION FILMS ON ZIRCONIUM

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Misch, R.D.

    1960-05-01

    Zirconium anodizes similarly to tungsten in respect to the change of interference colors with applied voltage. However, the oxide layer on tungsten cannot reach as great a thickness. Hafnium does not anodize in the same way as zirconium but is similar to tantalum. By measuring the interference color and capacitative thicknesses on zirconium (Grades I and III) and a 2.5 wt.% tin ailoy, the film was found to grow less rapidly in terms of capacitance than in terms of iaterference colors. This was interpreted to mean that cracks develop in the oxide as it thickens. The effect was most pronouncedmore » on Grade III zirconium and least pronounced on the tin alloy. The reduction in capacitative thickness was especially noticeable when white oxide appeared. Comparative measurements on Grade I zirconium and 2.5 wt.% tin alloy indicated that the thickness of the oxide film on the tin alloy (after 16 hours in water) increased more rapidly with temperature than the film on zirconium. Tin is believed to act in ways to counteract the tendency of the oxide to form cracks, and to produce vacancies which promote ionic diffusion. (auth)« less

  2. X-ray Photoelectron Spectroscopy of High-κ Dielectrics

    NASA Astrophysics Data System (ADS)

    Mathew, A.; Demirkan, K.; Wang, C.-G.; Wilk, G. D.; Watson, D. G.; Opila, R. L.

    2005-09-01

    Photoelectron spectroscopy is a powerful technique for the analysis of gate dielectrics because it can determine the elemental composition, the chemical states, and the compositional depth profiles non-destructively. The sampling depth, determined by the escape depth of the photoelectrons, is comparable to the thickness of current gate oxides. A maximum entropy algorithm was used to convert photoelectron collection angle dependence of the spectra to compositional depth profiles. A nitrided hafnium silicate film is used to demonstrate the utility of the technique. The algorithm balances deviations from a simple assumed depth profile against a calculated depth profile that best fits the angular dependence of the photoelectron spectra. A flow chart of the program is included in this paper. The development of the profile is also shown as the program is iterated. Limitations of the technique include the electron escape depths and elemental sensitivity factors used to calculate the profile. The technique is also limited to profiles that extend to the depth of approximately twice the escape depth. These limitations restrict conclusions to comparison among a family of similar samples. Absolute conclusions about depths and concentrations must be used cautiously. Current work to improve the algorithm is also described.

  3. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO{sub 2}/TiN stacks

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.

    2016-06-13

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO{sub 2}-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550–750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature,more » with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 10{sup 8} switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.« less

  4. The Juvenile Hafnium Isotope Signal as a Record of Supercontinent Cycles.

    PubMed

    Gardiner, Nicholas J; Kirkland, Christopher L; Van Kranendonk, Martin J

    2016-12-07

    Hf isotope ratios measured in igneous zircon are controlled by magmatic source, which may be linked to tectonic setting. Over the 200-500 Myr periodicity of the supercontinent cycle - the principal geological phenomenon controlling prevailing global tectonic style - juvenile Hf signals, i.e. most radiogenic, are typically measured in zircon from granites formed in arc settings (crustal growth), and evolved zircon Hf signals in granites formed in continent-collision settings (crustal reworking). Interrogations of Hf datasets for excursions related to Earth events commonly use the median value, however this may be equivocal due to magma mixing. The most juvenile part of the Hf signal is less influenced by crustal in-mixing, and arguably a more sensitive archive of Earth's geodynamic state. We analyze the global Hf dataset for this juvenile signal, statistically correlating supercontinent amalgamation intervals with evolved Hf episodes, and breakup leading to re-assembly with juvenile Hf episodes. The juvenile Hf signal is more sensitive to Pangaea and Rodinia assembly, its amplitude increasing with successive cycles to a maximum with Gondwana assembly which may reflect enhanced subduction-erosion. We demonstrate that the juvenile Hf signal carries important information on prevailing global magmatic style, and thus tectonic processes.

  5. The Juvenile Hafnium Isotope Signal as a Record of Supercontinent Cycles

    NASA Astrophysics Data System (ADS)

    Gardiner, Nicholas J.; Kirkland, Christopher L.; van Kranendonk, Martin J.

    2016-12-01

    Hf isotope ratios measured in igneous zircon are controlled by magmatic source, which may be linked to tectonic setting. Over the 200-500 Myr periodicity of the supercontinent cycle - the principal geological phenomenon controlling prevailing global tectonic style - juvenile Hf signals, i.e. most radiogenic, are typically measured in zircon from granites formed in arc settings (crustal growth), and evolved zircon Hf signals in granites formed in continent-collision settings (crustal reworking). Interrogations of Hf datasets for excursions related to Earth events commonly use the median value, however this may be equivocal due to magma mixing. The most juvenile part of the Hf signal is less influenced by crustal in-mixing, and arguably a more sensitive archive of Earth’s geodynamic state. We analyze the global Hf dataset for this juvenile signal, statistically correlating supercontinent amalgamation intervals with evolved Hf episodes, and breakup leading to re-assembly with juvenile Hf episodes. The juvenile Hf signal is more sensitive to Pangaea and Rodinia assembly, its amplitude increasing with successive cycles to a maximum with Gondwana assembly which may reflect enhanced subduction-erosion. We demonstrate that the juvenile Hf signal carries important information on prevailing global magmatic style, and thus tectonic processes.

  6. Application of hard coatings to substrates at low temperatures

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1993-01-01

    BIRL, the industrial research laboratory of Northwestern University, has conducted unique and innovative research, under sponsorship from the NASA Marshall Space Flight Center (MSFC), in the application of hard, wear resistant coatings to bearing steels using the high-rate reactive sputtering (HRRS) process that was pioneered by Dr. William Sproul, the principal investigator on this program. Prior to this program, Dr. Sproul had demonstrated that it is possible to apply hard coatings such as titanium nitride (TiN) to alloy steels at low temperatures via the HRRS process without changing the metallurgical properties of the steel. The NASA MSFC program at BIRL had the specific objectives to: apply TiN to 440C stainless steel without changing the metallurgical properties of the steel; prepare rolling contact fatigue (RCF) test samples coated with binary hard coatings of TiN, zirconium nitride (ZrN), hafnium nitride (HfN), chromium nitride (CrN), and molybdenum nitride (MoN), and metal coatings of copper (Cu) and gold (Au); and develop new alloyed hard coatings of titanium aluminum nitride (Ti(0.5)Al(0.5)N), titanium zirconium nitride (Ti(0.5)Zr(0.5)N), and titanium aluminum vanadium nitride.

  7. Advanced materials for radiation-cooled rockets

    NASA Technical Reports Server (NTRS)

    Reed, Brian; Biaglow, James; Schneider, Steven

    1993-01-01

    The most common material system currently used for low thrust, radiation-cooled rockets is a niobium alloy (C-103) with a fused silica coating (R-512A or R-512E) for oxidation protection. However, significant amounts of fuel film cooling are usually required to keep the material below its maximum operating temperature of 1370 C, degrading engine performance. Also the R-512 coating is subject to cracking and eventual spalling after repeated thermal cycling. A new class of high-temperature, oxidation-resistant materials are being developed for radiation-cooled rockets, with the thermal margin to reduce or eliminate fuel film cooling, while still exceeding the life of silicide-coated niobium. Rhenium coated with iridium is the most developed of these high-temperature materials. Efforts are on-going to develop 22 N, 62 N, and 440 N engines composed of these materials for apogee insertion, attitude control, and other functions. There is also a complimentary NASA and industry effort to determine the life limiting mechanisms and characterize the thermomechanical properties of these materials. Other material systems are also being studied which may offer more thermal margin and/or oxidation resistance, such as hafnium carbide/tantalum carbide matrix composites and ceramic oxide-coated iridium/rhenium chambers.

  8. Heterojunction fully depleted SOI-TFET with oxide/source overlap

    NASA Astrophysics Data System (ADS)

    Chander, Sweta; Bhowmick, B.; Baishya, S.

    2015-10-01

    In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device.

  9. Interfacial structure and electrical properties of ultrathin HfO2 dielectric films on Si substrates by surface sol-gel method

    NASA Astrophysics Data System (ADS)

    Gong, You-Pin; Li, Ai-Dong; Qian, Xu; Zhao, Chao; Wu, Di

    2009-01-01

    Ultrathin HfO2 films with about ~3 nm thickness were deposited on n-type (1 0 0) silicon substrates using hafnium chloride (HfCl4) source by the surface sol-gel method and post-deposition annealing (PDA). The interfacial structure and electrical properties of ultrathin HfO2 films were investigated. The HfO2 films show amorphous structures and smooth surface morphologies with a very thin interfacial oxide layer of ~0.5 nm and small surface roughness (~0.45 nm). The 500 °C PDA treatment forms stronger Hf-O bonds, leading to passivated traps, and the interfacial layer is mainly Hf silicate (HfxSiyOz). Equivalent oxide thickness of around 0.84 nm of HfO2/Si has been obtained with a leakage current density of 0.7 A cm-2 at Vfb + 1 V after 500 °C PDA. It was found that the current conduction mechanism of HfO2/Si varied from Schottky-Richardson emission to Fowler-Nordheim tunnelling at an applied higher positive voltage due to the activated partial traps remaining in the ultrathin HfO2 films.

  10. Evaluation of thermal stability in spectrally selective few-layer metallo-dielectric structures for solar thermophotovoltaics

    NASA Astrophysics Data System (ADS)

    Shimizu, Makoto; Kohiyama, Asaka; Yugami, Hiroo

    2018-06-01

    The thermal stability of spectrally selective few-layer metallo-dielectric structures is evaluated to analyze their potential as absorber and emitter materials in solar thermophotovoltaic (STPV) systems. High-efficiency (e.g., STPV) systems require materials with spectrally selective properties, especially at high temperatures (>1273 K). Aiming to develop such materials for high-temperature applications, we propose a few-layer structure composed of a refractory metal (i.e., Mo) nanometric film sandwiched between the layers of a dielectric material (i.e., hafnium oxide, HfO2) deposited on a Mo bulk substrate. In vacuum conditions (<5 × 10-2 Pa), the few-layer structure shows thermal stability at 1423 K for at least 1 h. At 1473 K, the spectral selectivity was degraded. This could have been caused by the oxidation of the Mo thin film by the residual oxygen through the grain boundaries of the upper HfO2 layer. This experiment showed the potential stability of few-layer structures for applications working at temperatures greater than 1273 K as well as the degradation mechanism of the few-layer structure. This characteristic is expected to help improve the thermal stability in few-layer structures further.

  11. Facility for assessing spectral normal emittance of solid materials at high temperature.

    PubMed

    Mercatelli, Luca; Meucci, Marco; Sani, Elisa

    2015-10-10

    Spectral emittance is a key topic in the study of new compositions, depositions, and mechanical machining of materials for solar absorption and for renewable energies in general. The present work reports on the realization and testing of a new experimental facility for the measurement of directional spectral emittance in the range of 2.5-20 μm. Our setup provides emittance spectral information in a completely controlled environment at medium-high temperatures up to 1200 K. We describe the layout and first tests on the device, comparing the results obtained for hafnium carbide and tantalum diboride ultrarefractory ceramic samples to previous quasi-monochromatic measurements carried out in the PROMES-CNRS (PROcedes, Materiaux et Energie Solaire- Centre National de la Recherche Scientifique, France) solar furnace, obtaining a good agreement. Finally, to assess the reliability of the widely used approach of estimating the spectral emittance from room-temperature reflectance spectrum, we compared the calculation in the 2.5-17 μm spectral range to the experimental high-temperature spectral emittance, obtaining that the spectral trend of calculated and measured curves is similar but the calculated emittance underestimates the measured value.

  12. Effects of oversized solutes on radiation-induced segregation in austenitic stainless steels

    NASA Astrophysics Data System (ADS)

    Hackett, M. J.; Busby, J. T.; Miller, M. K.; Was, G. S.

    2009-06-01

    Zirconium or hafnium additions to austenitic stainless steels caused a reduction in grain boundary Cr depletion after proton irradiations for up to 3 dpa at 400 °C and 1 dpa at 500 °C. The predictions of a radiation-induced segregation (RIS) model were also consistent with experiments in showing greater effectiveness of Zr relative to Hf due to a larger binding energy. However, the experiments showed that the effectiveness of the solute additions disappeared above 3 dpa at 400 °C and above 1 dpa at 500 °C. The loss of solute effectiveness with increasing dose is attributed to a reduction in the amount of oversized solute from the matrix due to growth of carbide precipitates. Atom probe tomography measurements indicated a reduction in amount of oversized solute in solution as a function of irradiation dose. The observations were supported by diffusion analysis suggesting that significant solute diffusion by the vacancy flux to precipitate surfaces occurs on the time scales of proton irradiations. With a decrease in available solute in solution, improved agreement between the predictions of the RIS model and measurements were consistent with the solute-vacancy trapping process, as the mechanism for enhanced recombination and suppression of RIS.

  13. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

  14. Quinary metallic glass alloys

    DOEpatents

    Lin, X.; Johnson, W.L.

    1998-04-07

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10{sup 3}K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf){sub a}(Al,Zn){sub b}(Ti,Nb){sub c}(Cu{sub x}Fe{sub y}(Ni,Co){sub z}){sub d} wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d{hor_ellipsis}y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  15. Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

    2016-01-01

    Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

  16. Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dhanunjaya, M.; Khan, S. A.; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

    2017-12-01

    We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of HfO2 nanoparticles (NPs) within the HfO2 thin-films deposited by radio frequency (RF) magnetron sputtering technique. As grown films consisted of amorphous clusters of non-spherical HfO2 NPs. These amorphous clusters are transformed to crystalline grains under 100 MeV Ag ion irradiation. These crystallites are found to be spherical in shape and are well dispersed within the films. The average size of these crystallites is found to increase with fluence. Pristine and irradiated films have been characterized by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), grazing incident x-ray diffraction (GIXRD) and photo luminescence (PL) measurements. The PL measurements suggested the existence of different types of oxygen related defects in pristine and irradiated samples. The observed results on crystallization and grain growth under the influence of SHI are explained within the framework of thermal spike model. The results are expected to provide useful information for understanding the electronic excitation induced crystallization of nanoparticles and can lead to useful applications in electronic and photonic devices.

  17. Lunar and Planetary Science XXXV: Terrestrial Planets: Building Blocks and Differentiation

    NASA Technical Reports Server (NTRS)

    2004-01-01

    The session "Terrestrial Planets: Building Blocks and Differentiation: included the following topics:Magnesium Isotopes in the Earth, Moon, Mars, and Pallasite Parent Body: High-Precision Analysis of Olivine by Laser-Ablation Multi-Collector ICPMS; Meteoritic Constraints on Collision Rates in the Primordial Asteroid Belt and Its Origin; New Constraints on the Origin of the Highly Siderophile Elements in the Earth's Upper Mantle; Further Lu-Hf and Sm-Nd Isotopic Data on Planetary Materials and Consequences for Planetary Differentiation; A Deep Lunar Magma Ocean Based on Neodymium, Strontium and Hafnium Isotope Mass Balance Partial Resetting on Hf-W System by Giant Impacts; On the Problem of Metal-Silicate Equilibration During Planet Formation: Significance for Hf-W Chronometry ; Solid Metal-Liquid Metal Partitioning of Pt, Re, and Os: The Effect of Carbon; Siderophile Element Abundances in Fe-S-Ni-O Melts Segregated from Partially Molten Ordinary Chondrite Under Dynamic Conditions; Activity Coefficients of Silicon in Iron-Nickel Alloys: Experimental Determination and Relevance for Planetary Differentiation; Reinvestigation of the Ni and Co Metal-Silicate Partitioning; Metal/Silicate Paritioning of P, Ga, and W at High Pressures and Temperatures: Dependence on Silicate Melt Composition; and Closure of the Fe-S-Si Liquid Miscibility Gap at High Pressure and Its Implications for Planetary Core Formation.

  18. Rapid heterogeneous assembly of multiple magma reservoirs prior to Yellowstone supereruptions.

    PubMed

    Wotzlaw, Jörn-Frederik; Bindeman, Ilya N; Stern, Richard A; D'Abzac, Francois-Xavier; Schaltegger, Urs

    2015-09-10

    Large-volume caldera-forming eruptions of silicic magmas are an important feature of continental volcanism. The timescales and mechanisms of assembly of the magma reservoirs that feed such eruptions as well as the durations and physical conditions of upper-crustal storage remain highly debated topics in volcanology. Here we explore a comprehensive data set of isotopic (O, Hf) and chemical proxies in precisely U-Pb dated zircon crystals from all caldera-forming eruptions of Yellowstone supervolcano. Analysed zircons record rapid assembly of multiple magma reservoirs by repeated injections of isotopically heterogeneous magma batches and short pre-eruption storage times of 10(3) to 10(4) years. Decoupled oxygen-hafnium isotope systematics suggest a complex source for these magmas involving variable amounts of differentiated mantle-derived melt, Archean crust and hydrothermally altered shallow-crustal rocks. These data demonstrate that complex magma reservoirs with multiple sub-chambers are a common feature of rift- and hotspot related supervolcanoes. The short duration of reservoir assembly documents rapid crustal remelting and two to three orders of magnitude higher magma production rates beneath Yellowstone compared to continental arc volcanoes. The short pre-eruption storage times further suggest that the detection of voluminous reservoirs of eruptible magma beneath active supervolcanoes may only be possible prior to an impending eruption.

  19. Rapid heterogeneous assembly of multiple magma reservoirs prior to Yellowstone supereruptions

    PubMed Central

    Wotzlaw, Jörn-Frederik; Bindeman, Ilya N.; Stern, Richard A.; D’Abzac, Francois-Xavier; Schaltegger, Urs

    2015-01-01

    Large-volume caldera-forming eruptions of silicic magmas are an important feature of continental volcanism. The timescales and mechanisms of assembly of the magma reservoirs that feed such eruptions as well as the durations and physical conditions of upper-crustal storage remain highly debated topics in volcanology. Here we explore a comprehensive data set of isotopic (O, Hf) and chemical proxies in precisely U-Pb dated zircon crystals from all caldera-forming eruptions of Yellowstone supervolcano. Analysed zircons record rapid assembly of multiple magma reservoirs by repeated injections of isotopically heterogeneous magma batches and short pre-eruption storage times of 103 to 104 years. Decoupled oxygen-hafnium isotope systematics suggest a complex source for these magmas involving variable amounts of differentiated mantle-derived melt, Archean crust and hydrothermally altered shallow-crustal rocks. These data demonstrate that complex magma reservoirs with multiple sub-chambers are a common feature of rift- and hotspot related supervolcanoes. The short duration of reservoir assembly documents rapid crustal remelting and two to three orders of magnitude higher magma production rates beneath Yellowstone compared to continental arc volcanoes. The short pre-eruption storage times further suggest that the detection of voluminous reservoirs of eruptible magma beneath active supervolcanoes may only be possible prior to an impending eruption. PMID:26356304

  20. HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

    2007-09-28

    The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

  1. Method of improving fatigue life of cast nickel based superalloys and composition

    DOEpatents

    Denzine, Allen F.; Kolakowski, Thomas A.; Wallace, John F.

    1978-03-14

    The invention consists of a method of producing a fine equiaxed grain structure (ASTM 2-4) in cast nickel-base superalloys which increases low cycle fatigue lives without detrimental effects on stress rupture properties to temperatures as high as 1800.degree. F. These superalloys are variations of the basic nickel-chromium matrix, hardened by gamma prime [Ni.sub.3 (Al, Ti)] but with optional additions of cobalt, tungsten, molybdenum, vanadium, columbium, tantalum, boron, zirconium, carbon and hafnium. The invention grain refines these alloys to ASTM 2 to 4 increasing low cycle fatigue life by a factor of 2 to 5 (i.e. life of 700 hours would be increased to 1400 to 3500 hours for a given stress) as a result of the addition of 0.01% to 0.2% of a member of the group consisting of boron, zirconium and mixtures thereof to aid heterogeneous nucleation. The alloy is vacuum melted and heated to 250.degree.-400.degree. F. above the melting temperature, cooled to partial solidification, thus resulting in said heterogeneous nucleation and fine grains, then reheated and cast at about 50.degree.-100.degree. F. of superheat. Additions of 0.1% boron and 0.1% zirconium (optional) are the preferred nucleating agents.

  2. CMUTs with high-K atomic layer deposition dielectric material insulation layer.

    PubMed

    Xu, Toby; Tekes, Coskun; Degertekin, F

    2014-12-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

  3. Nanostructured microtubes based on TiO2 doped by Zr and Hf oxides with the anatase structure

    NASA Astrophysics Data System (ADS)

    Zheleznov, VV; Voit, EI; Sushkov, YV; Sarin, SA; Kuryavyi, VG; Opra, DP; Gnedenkov, SV; Sinebryukhov, SL; Sokolov, AA

    2016-01-01

    The nanostructured microtubes based on TiO2 have been prepared on the carbon fiber template using the sol-gel method. The microtubes consist of nanoparticles of metal oxides: TiO2/ZrO2 and TiO2/HfO2. The dependence of microtubes morphology and nanoparticles structure on the synthesis conditions has been studied using the methods of SEM, SAXS, and Raman spectroscopy. It has been demonstrated that at the stoichiometric ratio of up to 0.04 for Zr/Ti and up to 0.06 for Hf/Ti microtubes consist of uniform nanoparticles with the anatase structure. Along with further increase of the dopants content in the microtubes composition, nanoparticles acquire the core-shell structure. It has been suggested that nanoparticles have a core composed of the solid solutions Ti1-xZrxO2 or Ti1-xHfxO2 and a shell consisting of zirconium or hafnium titanate. The fabricated Zr- and Hf-doped TiO2 materials were investigated in view of their possible use as anode materials for Li-ion batteries. Charge- discharge measurements showed that the doped samples manifested significantly higher reversibility in comparison with the undoped TiO2. The method opens new prospects in synthesis of nanostructured materials for Li-ion batteries application.

  4. Effect of the annealing temperature and ion-beam bombardment on the properties of solution-derived HfYGaO films as liquid crystal alignment layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Park, Hong-Gyu; Lee, Yun-Gun; Jang, Sang Bok

    2015-11-15

    Hafnium yttrium gallium oxide (HfYGaO) films were applied to liquid crystal displays (LCDs) as liquid crystal (LC) alignment layers, replacing conventional polyimide (PI) layers. The HfYGaO alignment layers were prepared by fabricating solution-processed HfYGaO films, annealing them, and treating them with ion-beam (IB) irradiation. The authors studied the effects of annealing temperature and IB irradiation of the solution-derived HfYGaO films on the orientation of LC molecules. The LC molecules on the solution-derived HfYGaO films were homogeneously and uniformly aligned by IB irradiation, irrespective of the annealing temperature. Atomic force microscopy analyses revealed that the surface reformation of the HfYGaO filmsmore » induced by IB irradiation strengthened the van der Waals force between the LC molecules and the HfYGaO films, leading to uniform LC alignment. Enhanced electro-optical characteristics were observed in the twisted-nematic (TN) LCDs based on IB-irradiated HfYGaO films compared with those of TN-LCDs based on PI layers, demonstrating the high application potential of the proposed solution-derived HfYGaO films as LC alignment layers.« less

  5. Development of tungsten-tantalum generator

    NASA Technical Reports Server (NTRS)

    Leblanc, A.; Babich, J.; Jhingran, S. G.

    1985-01-01

    The purpose of this project was to develop a useable tungsten (W)/tantalum (Ta) generator. Ta-178 is formed following the decay of its parent, W-178 (half-life: 21.7d) and has a half life of 9.3 minutes in turn yielding stable Hf-178. The decay of the parent isotope (W-178) occurs entirely by electron capture to the 9.3 minute Ta-178 state, without feeding the high spin Ta-178 isomer (half life 2.2 hours). In Ta-178 decay, 99.2% of the disintegrations proceed by electron capture and 0.18% by positron emission. Electron capture results in a 61.2% branch to the ground state of Hf-178 and 33.7% to the first excited state at 93 1KeV. The most prominent features of the radionuclide's energy spectrum are the hafnium characteristic radiation peaks with energies between 54.6 and 65.0 KeV. The radiation exposure dose of Ta-118 was calculated to be approximately one-twentieth that of Tc-99m on a per millicurie basis. A twenty-fold reduction in radiation exposure from Ta-178 compared with Tc-99m means that the usual administered dose can be increased three or four times, greatly increasing statistical accuracy while reducing radiation exposure by a factor of five.

  6. Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Semaltianos, N. G., E-mail: nsemaltianos@yahoo.com; Friedt, J.-M.; Blondeau-Patissier, V.

    2016-05-28

    Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO{sub 2}) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter inmore » the range of 4.3–5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74–8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.« less

  7. Steep-slope hysteresis-free negative capacitance MoS2 transistors

    NASA Astrophysics Data System (ADS)

    Si, Mengwei; Su, Chun-Jung; Jiang, Chunsheng; Conrad, Nathan J.; Zhou, Hong; Maize, Kerry D.; Qiu, Gang; Wu, Chien-Ting; Shakouri, Ali; Alam, Muhammad A.; Ye, Peide D.

    2018-01-01

    The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec-1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption1,2. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier3. Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel4-12. Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm-1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied.

  8. CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates

    NASA Astrophysics Data System (ADS)

    Zheng, Binjie; Wang, Zegao; Qi, Fei; Wang, Xinqiang; Yu, Bo; Zhang, Wanli; Chen, Yuanfu

    2018-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) have attracted burgeoning attention due to their various properties and wide potential applications. As a new TMD, hafnium disulfide (HfS2) is theoretically predicted to have better electrical performance than widely studied MoS2. The experimental researches also confirmed the extraordinary feature in electronics and optoelectronics. However, the maximal device performance may not be achieved due to its own limitation of planar structure and challenge of transfer without contamination. Here, through the chemical vapor deposition (CVD) technique, inch-size HfS2 nanoforest has been directly grown on diverse objective substrates covering insulating, semiconducting and conducting substrates. This direct CVD growth without conventional transfer process avoids contamination and degradation in quality, suggesting its promising and wide applications in high-quality and multifarious devices. It is noted that all the HfS2 nanoforests grown on diverse substrates are constructed with vertically aligned few-layered HfS2 nanosheets with high crystalline quality and edge orientation. Moreover, due to its unique structure, the HfS2 nanoforest owns abundant exposed edge sites and large active surface area, which is essential to apply in high-performance catalyst, sensor, and energy storage or field emitter.

  9. The Juvenile Hafnium Isotope Signal as a Record of Supercontinent Cycles

    PubMed Central

    Gardiner, Nicholas J.; Kirkland, Christopher L.; Van Kranendonk, Martin J.

    2016-01-01

    Hf isotope ratios measured in igneous zircon are controlled by magmatic source, which may be linked to tectonic setting. Over the 200–500 Myr periodicity of the supercontinent cycle - the principal geological phenomenon controlling prevailing global tectonic style - juvenile Hf signals, i.e. most radiogenic, are typically measured in zircon from granites formed in arc settings (crustal growth), and evolved zircon Hf signals in granites formed in continent-collision settings (crustal reworking). Interrogations of Hf datasets for excursions related to Earth events commonly use the median value, however this may be equivocal due to magma mixing. The most juvenile part of the Hf signal is less influenced by crustal in-mixing, and arguably a more sensitive archive of Earth’s geodynamic state. We analyze the global Hf dataset for this juvenile signal, statistically correlating supercontinent amalgamation intervals with evolved Hf episodes, and breakup leading to re-assembly with juvenile Hf episodes. The juvenile Hf signal is more sensitive to Pangaea and Rodinia assembly, its amplitude increasing with successive cycles to a maximum with Gondwana assembly which may reflect enhanced subduction-erosion. We demonstrate that the juvenile Hf signal carries important information on prevailing global magmatic style, and thus tectonic processes. PMID:27924946

  10. High-Melt Carbon-Carbon Coating for Nozzle Extensions

    NASA Technical Reports Server (NTRS)

    Thompson, James

    2015-01-01

    Carbon-Carbon Advanced Technologies, Inc. (C-CAT), has developed a high-melt coating for use in nozzle extensions in next-generation spacecraft. The coating is composed primarily of carbon-carbon, a carbon-fiber and carbon-matrix composite material that has gained a spaceworthy reputation due to its ability to withstand ultrahigh temperatures. C-CAT's high-melt coating embeds hafnium carbide (HfC) and zirconium diboride (ZrB2) within the outer layers of a carbon-carbon structure. The coating demonstrated enhanced high-temperature durability and suffered no erosion during a test in NASA's Arc Jet Complex. (Test parameters: stagnation heat flux=198 BTD/sq ft-sec; pressure=.265 atm; temperature=3,100 F; four cycles totaling 28 minutes) In Phase I of the project, C-CAT successfully demonstrated large-scale manufacturability with a 40-inch cylinder representing the end of a nozzle extension and a 16-inch flanged cylinder representing the attach flange of a nozzle extension. These demonstrators were manufactured without spalling or delaminations. In Phase II, C-CAT worked with engine designers to develop a nozzle extension stub skirt interfaced with an Aerojet Rocketdyne RL10 engine. All objectives for Phase II were successfully met. Additional nonengine applications for the coating include thermal protection systems (TPS) for next-generation spacecraft and hypersonic aircraft.

  11. Capabilities of laser ablation mass spectrometry in the differentiation of natural and artificial opal gemstones.

    PubMed

    Erel, Eric; Aubriet, Frédéric; Finqueneisel, Gisèle; Muller, Jean-François

    2003-12-01

    The potentialities of laser ablation coupled to ion cyclotron resonance Fourier transform mass spectrometry are evaluated to distinguish natural and artificial opals. The detection of specific species in both ion detection modes leads us to obtain relevant criteria of differentiation. In positive ions, species including hafnium and large amounts of zirconium atoms are found to be specific for artificial opal. In contrast, aluminum, titanium, iron, and rubidium are systematically detected in the study of natural opals. Moreover, some ions allow us to distinguish between natural opal from Australia and from Mexico. Australian gemstone includes specifically strontium, cesium, and barium. Moreover, it is also found that the yield of (H2O)0-1(SiO2)nX- (X- = O-, OH-, KO-, NaO-, SiO2-, AlO1-2-, FeO2-, ZrO2-, and ZrO3-) and (Al2O3)(SiO2)nAlO2- ions depends on the composition of the sample when opals are laser ablated. Ions, which include zirconium oxide species, are characteristics of artificial gem. In contrast, natural opals lead us, after laser ablation, to the production of ions including H2O, Al2O3 motifs and AlO-, KO-, NaO-, and FeO2- species.

  12. Effective Enrichment and Mass Spectrometry Analysis of Phosphopeptides Using Mesoporous Metal Oxide Nanomaterials

    PubMed Central

    Nelson, Cory A.; Szczech, Jeannine R.; Dooley, Chad J.; Xu, Qingge; Lawrence, Matthew J.; Zhu, Haoyue; Jin, Song; Ge, Ying

    2010-01-01

    Mass spectrometry (MS)-based phosphoproteomics remains challenging due to the low abundance of phosphoproteins and substoichiometric phosphorylation. This demands better methods to effectively enrich phosphoproteins/peptides prior to MS analysis. We have previously communicated the first use of mesoporous zirconium oxide (ZrO2) nanomaterials for effective phosphopeptide enrichment. Here we present the full report including the synthesis, characterization, and application of mesoporous titanium dioxide (TiO2), ZrO2, and hafnium oxide (HfO2) in phosphopeptide enrichment and MS analysis. Mesoporous ZrO2 and HfO2 are demonstrated to be superior to TiO2 for phosphopeptide enrichment from a complex mixture with high specificity (>99%), which could almost be considered as “a purification”, mainly because of the extremely large active surface area of mesoporous nanomaterials. A single enrichment and Fourier transform MS analysis of phosphopeptides digested from a complex mixture containing 7% of α-casein identified 21 out of 22 phosphorylation sites for α-casein. Moreover, the mesoporous ZrO2 and HfO2 can be reused after a simple solution regeneration procedure with comparable enrichment performance to that of fresh materials. Mesoporous ZrO2 and HfO2 nanomaterials hold great promise for applications in MS-based phosphoproteomics. PMID:20704311

  13. Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

    NASA Astrophysics Data System (ADS)

    Zhou, Y.; Ang, D. S.; Kalaga, P. S.

    2018-04-01

    In an earlier work, we found that an electrical soft-breakdown region in wide-bandgap oxides, such as hafnium dioxide, silicon dioxide, etc., could be reversed when illuminated by white light. The effect is evidenced by a decrease in the breakdown leakage current, termed as a negative photoconductivity response. This finding raises the prospect for optical sensing applications based on these traditionally non-photo-responsive but ubiquitous oxide materials. In this study, we examine the statistical distribution for the rate of breakdown reversal as well as the influence of factors such as wavelength, light intensity, oxide stoichiometry (or oxygen content) and temperature on the reversal rate. The rate of breakdown reversal is shown to be best described by the lognormal distribution. Light in the range of ˜400-700 nm is found to have relatively little influence on the reversal rate. On the other hand, light intensity, oxygen content and temperature, each of them has a clear impact; a stronger light intensity, an oxide that is richer in oxygen content and a reduced temperature all speed up the reversal process substantially. These experimental results are consistent with the proposed phenomenological redox model involving photo-assisted recombination of the surrounding oxygen interstitials with vacancy defects in the breakdown path.

  14. Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

    NASA Astrophysics Data System (ADS)

    Kale, Sumit; Kondekar, Pravin N.

    2018-01-01

    This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

  15. Photovoltaic Enhancement with Ferroelectric HfO2Embedded in the Structure of Solar Cells

    NASA Astrophysics Data System (ADS)

    Eskandari, Rahmatollah; Malkinski, Leszek

    Enhancing total efficiency of the solar cells is focused on the improving one or all of the three main stages of the photovoltaic effect: absorption of the light, generation of the carriers and finally separation of the carriers. Ferroelectric photovoltaic designs target the last stage with large electric forces from polarized ferroelectric films that can be larger than band gap of the material and the built-in electric fields in semiconductor bipolar junctions. In this project we have fabricated very thin ferroelectric HfO2 films ( 10nm) doped with silicon using RF sputtering method. Doped HfO2 films were capped between two TiN layers ( 20nm) and annealed at temperatures of 800ºC and 1000ºC and Si content was varied between 6-10 mol. % using different size of mounted Si chip on hafnium target. Piezoforce microscopy (PFM) method proved clear ferroelectric properties in samples with 6 mol. % of Si that were annealed at 800ºC. Ferroelectric samples were poled in opposite directions and embedded in the structure of a cell and an enhancement in photovoltaic properties were observed on the poled samples vs unpoled ones with KPFM and I-V measurements. The current work is funded by the NSF EPSCoR LA-SiGMA project under award #EPS-1003897.

  16. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  17. Arcjet Cathode Phenomena

    NASA Technical Reports Server (NTRS)

    Curran, Francis M.; Haag, Thomas W.; Raquet, John F.

    1989-01-01

    Cathode tips made from a number of different materials were tested in a modular arcjet thruster in order to examine cathode phenomena. Periodic disassembly and examination, along with the data collected during testing, indicated that all of the tungsten-based materials behaved similarly despite the fact that in one of these samples the percentage of thorium oxide was doubled and another was 25 percent rhenium. The mass loss rate from a 2 percent thoriated rhenium cathode was found to be an order of magnitude greater than that observed using 2 percent thoriated tungsten. Detailed analysis of one of these cathode tips showed that the molten crater contained pure tungsten to a depth of about 150 microns. Problems with thermal stress cracking were encountered in the testing of a hafnium carbide tip. Post test analysis showed that the active area of the tip had chemically reacted with the propellant. A 100 hour continuous test was run at about 1 kW. Post test analysis revealed no dendrite formation, such as observed in a 30 kW arcjet lifetest, near the cathode crater. The cathodes from both this test and a previously run 1000 hour cycled test displayed nearly identical arc craters. Data and calculations indicate that the mass losses observed in testing can be explained by evaporation.

  18. Arcjet cathode phenomena

    NASA Technical Reports Server (NTRS)

    Curran, Francis M.; Haag, Thomas W.; Raquet, John F.

    1989-01-01

    Cathode tips made from a number of different materials were tested in a modular arcjet thruster in order to examine cathode phenomena. Periodic disassembly and examination, along with the data collected during testing, indicated that all of the tungsten-based materials behaved similarly despite the fact that in one of these samples the percentage of thorium oxide was doubled and another was 25 percent rhenium. The mass loss rate from a 2 percent thoriated rhenium cathode was found to be an order of magnitude greater than that observed using 2 percent thoriated tungsten. Detailed analysis of one of these cathode tips showed that the molten crater contained pure tungsten to a depth of about 150 microns. Problems with thermal stress cracking were encountered in the testing of a hafnium carbide tip. Post test analysis showed that the active area of the tip had chemically reacted with the propellant. A 100 hour continuous test was run at about 1 kW. Post test analysis revealed no dendrite formation, such as observed in a 30 kW arcjet lifetest, near the cathode crater. The cathodes from both this test and a previously run 1000 hour cycled test displayed nearly identical arc craters. Data and calculations indicate that the mass losses observed in testing can be explained by evaporation.

  19. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    PubMed

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  20. Hafnium and neodymium isotopes and REY distribution in the truly dissolved, nanoparticulate/colloidal and suspended loads of rivers in the Amazon Basin, Brazil

    NASA Astrophysics Data System (ADS)

    Merschel, Gila; Bau, Michael; Schmidt, Katja; Münker, Carsten; Dantas, Elton L.

    2017-09-01

    Radiogenic isotopes in river sediments and river waters have been widely used in provenance studies, as these samples naturally integrate the geology/chemistry of the entire catchment. While the Hf and Nd isotope systems are coupled during igneous processes, they are decoupled during supergene processes at the Earth's surface, which is reflected by the isotope composition of riverine sediments. We present the first data for both Hf and Nd isotope compositions of the dissolved (0.2 μm-filtrates rich in nanoparticles and colloids, NPCs) and the truly dissolved (1 kDa-ultrafiltrates) load of rivers. Hafnium and Nd isotope compositions and concentrations of the Rare Earths and Yttrium (REY) and Hf were determined for suspended particles (>0.2 μm) as well as for the dissolved and the truly dissolved load of the Rio Solimões, the Amazon's largest tributary draining the Andes, and of the Rio Negro, an organic NPC- and particle-rich river draining the rainforest of northern Amazonia. We also analyzed the Nd isotope compositions of suspended sediments and 0.2 μm-filtered water samples from the Amazon River and its tributaries Rio Tapajos, Rio Xingu and Rio Jari. Our novel results clearly show that the decoupling of the Hf and Nd isotope systems is related to incongruent weathering processes on the continent, as this decoupling can already be observed in the different Hf and Nd pools, i.e. in the particulate, the NPC-dominated dissolved and the truly dissolved load of rivers. In the Rio Negro and Rio Solimões, a strong particle size-dependent difference in Hf isotope composition is observed. Values of εHf become more radiogenic as filter poresize decreases, which can be related to the density- and size-dependent distribution of Hf-rich minerals, e.g. zircons, and their absence from the truly dissolved pool. In contrast, the Nd isotope composition of Amazonian river waters reflects that of their catchment geology. Tributaries draining the Precambrian Brazilian and Guyana shields show very unradiogenic εNd values of -19 to -25 in their dissolved load, whereas the Rio Solimões draining the Andes yields a more radiogenic εNd signal of only -7. The dissolved Nd isotope composition of the Amazon is dominated by its Andean tributaries and averages at -8. Although Nd isotope compositions are thought to not being fractionated by Earth surface processes, significant differences of 1.3-1.9 ε-units can be observed between the dissolved and suspended loads in the Amazon River and its main tributary, the Rio Solimões. In these rivers, the dissolved load is more radiogenic than the suspended sediment, which is likely due to incongruent weathering and related mineral sorting in the Andean headwaters. In contrast, the organic-rich and mineral-poor shield rivers do not show a difference between the truly dissolved, dissolved and suspended load, as the Nd in all these pools is controlled by surface- and solution-complexation and hence isotopically homogenized by continuous exchange and re-equilibration.

  1. Synthesis and characterisation of ionic liquids based on 1-butyl-3-methylimidazolium chloride and MCl(4), M = Hf and Zr.

    PubMed

    Campbell, Paul S; Santini, Catherine C; Bouchu, Denis; Fenet, Bernard; Rycerz, Leszek; Chauvin, Yves; Gaune-Escard, Marcelle; Bessada, Catherine; Rollet, Anne-Laure

    2010-02-07

    Dialkylimidazolium chlorometallate molten salts resulting from the combination of zirconium or hafnium tetrachloride and 1-butyl-3-methylimidazolium chloride, [C(1)C(4)Im][Cl], have been prepared with a molar fraction of MCl(4), R = n(MCl4)/n(MCl4) + n([C1C4IM][Cl]) equal to 0, 0.1, 0.2, 0.33, 0.5, 0.67. The structure and composition were studied by Differential Scanning Calorimetry (DSC), (35)Cl (263 to 333 K), (1)H and (13)C solid state and solution NMR spectroscopy, and electrospray ionisation (ESI) mass spectrometry. The primary anions of the MCl(4)-based ILs were [MCl(5)], [MCl(6)] and [M(2)Cl(9)], whose relative abundances varied with R. For R = 0.33, pure solid [C(1)C(4)Im](2)[MCl(6)], for both M = Zr and Hf are formed (m.p. = 366 and 385 K, respectively). For R = 0.67 pure ionic liquids [C(1)C(4)Im][M(2)Cl(9)] for both M = Zr and Hf are formed (T(g) = 224 and 220 K, respectively). The thermal dissociation has been attempted of [C(1)C(4)Im](2)[HfCl(6)], and [C(1)C(4)Im](2)[ZrCl(6)] monitored by (35)Cl and (91)Zr solid NMR (high temperature up to 551 K).

  2. Light-controlled drug release from singlet-oxygen sensitive nanoscale coordination polymers enabling cancer combination therapy.

    PubMed

    Liu, Jingjing; Yang, Guangbao; Zhu, Wenwen; Dong, Ziliang; Yang, Yu; Chao, Yu; Liu, Zhuang

    2017-11-01

    The development of smart drug delivery systems to realize controlled drug release for highly specific cancer treatment has attracted tremendous attention. Herein, nanoscale coordination polymers (NCPs) constructed from hafnium ions and bis-(alkylthio) alkene (BATA), a singlet-oxygen responsive linker, are fabricated and applied as nanocarriers to realize light-controlled drug release under a rather low optical power density. In this system, NCPs synthesized through a solvothermal method are sequentially loaded with chlorin e6 (Ce6), a photosensitizer, and doxorubicin (DOX), a chemotherapeutic drug, and then coated with lipid bilayer to allow modification with polyethylene glycol (PEG) to acquire excellent colloidal stability. The singlet oxygen produced by such NCP-Ce6-DOX-PEG nanocomposite can be used not only for photodynamic therapy, but also to induce the break of BATA linker and thus the destruction of nanoparticle structures under light exposure, thereby triggering effective drug release. Notably, with efficient tumor accumulation after intravenous injection as revealed by CT imaging, those NCP-Ce6-DOX-PEG nanoparticles could be utilized for combined chemo-photodynamic therapy with great antitumor efficacy. Thus, this work presents a unique type of NCP-based drug delivery system with biodegradability, sensitive responses to light, as well as highly efficient tumor retention for effective cancer combinational treatment. Copyright © 2017 Elsevier Ltd. All rights reserved.

  3. Cubic phase stabilization in nanoparticles of hafnia-zirconia oxides: Particle-size and annealing environment effects

    NASA Astrophysics Data System (ADS)

    Lu, Chih-Hsin; Raitano, Joan M.; Khalid, Syed; Zhang, Lihua; Chan, Siu-Wai

    2008-06-01

    Amorphous hafnia (HfO2-y), zirconia (ZrO2-y), and hafnia-zirconia (xHfO2-y-(1-x)(ZrO2-y)) nanoparticles were prepared by combining aqueous solutions of hexamethylenetetramine (HMT) with hafnium dichloride oxide (HfOCl2ṡ8H2O), zirconium dichloride oxide (ZrOCl2ṡ8H2O), or a mixture of these two salts at room temperature. For pure hafnia, transmission electron microscopy showed that the lower cation concentration (0.01M) resulted in the precipitation of smaller amorphous nanoparticles relative to higher concentrations (0.015M-0.04M). Consequently, the lower concentration preparation route coupled with a reducing environment (H2:N2=9:91) during annealing at temperatures between 650 and 850°C allowed for nanoparticles with a cubic structure to be prepared as determined by x-ray diffraction. The structurally cubic hafnia nanoparticles were 6nm or less in diameter and equiaxed. Using the same method (0.01M total metal cation concentration and reducing environment during annealing), nanoparticles of cubic structure were prepared across the entire hafnia-zirconia compositional spectrum, with a critical particle size for the cubic structure of about 6nm. Nanoparticles of tetragonal and monoclinic structure were prepared by increasing the annealing temperature and/or using a less reducing environment. The unique role of HMT in sample preparation is discussed as well.

  4. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    PubMed Central

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  5. Multi-spectral antireflection coating on zinc sulphide simultaneously effective in visible, eye safe laser wave length and MWIR region

    NASA Astrophysics Data System (ADS)

    Awasthi, Suman; Nautiyal, B. B.; Kumar, Rajiv; Bandyopadhyay, P. K.

    2012-09-01

    In recent years multi-spectral device is steadily growing popularity. Multi-spectral antireflection coating effective in visible region for sighting system, laser wavelength for ranging and MWIR region for thermal system can use common objective/receiver optics highly useful for state of art thermal instrumentation. In this paper, design and fabrication of antireflection coating simultaneously effective in visible region (450-650 nm), Eye safe laser wave length (1540 nm) and MWIR region (3.6-4.9 μm) has been reported. Comprehensive search method of design was used and the number of layers in the design was optimised with lowest evaluated merit function studied with respect to various layers. Finally eight-layer design stack was established using hafnium oxide as high index layer and silicon-di-oxide as low index coating material combination. The multilayer stack had been fabricated by using electron beam gun evaporation system in Symphony 9 vacuum coating unit. During layer deposition the substrate was irradiated with End-Hall ion gun. The evaporation was carried out in presence of oxygen and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 85% average transmission from 450 to 650 nm in visible region, 95% transmission at 1540 nm and 96% average transmission from 3.6 to 4.9 μm in MWIR region.

  6. Advanced Environmental Barrier Coating and SA Tyrannohex SiC Composites Integration for Improved Thermomechanical and Environmental Durability

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Halbig, Michael; Singh, Mrityunjay

    2018-01-01

    The development of 2700 degF capable environmental barrier coating (EBC) systems, particularly, the Rare Earth "Hafnium" Silicon bond coat systems, have significantly improved the temperature capability and environmental stability of SiC/SiC Ceramic Matrix Composite Systems. We have specifically developed the advanced 2700 degF EBC systems, integrating the EBC to the high temperature SA Tyrannohex SiC fiber composites, for comprehensive performance and durability evaluations for potential turbine engine airfoil component applications. The fundamental mechanical properties, environmental stability and thermal gradient cyclic durability performance of the EBC - SA Tyrannohex composites were investigated. The paper will particularly emphasize the high pressure combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue testing of uncoated and environmental barrier coated Tyrannohex SiC SA composites in these simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. We have also investigated high heat flux and flexural fatigue degradation mechanisms, determined the upper limits of operating temperature conditions for the coated SA composite material systems in thermomechanical fatigue conditions. Recent progress has also been made by using the self-healing rare earth-silicon based EBCs, thus enhancing the SA composite hexagonal fiber columns bonding for improved thermomechanical and environmental durability in turbine engine operation environments. More advanced EBC- composite systems based on the new EBC-Fiber Interphases will also be discussed.

  7. Growth and luminescent properties of Ce and Eu doped Cesium Hafnium Iodide single crystalline scintillators

    NASA Astrophysics Data System (ADS)

    Kodama, Shohei; Kurosawa, Shunsuke; Yamaji, Akihiro; Pejchal, Jan; Král, Robert; Ohashi, Yuji; Kamada, Kei; Yokota, Yuui; Nikl, Martin; Yoshikawa, Akira

    2018-06-01

    In order to obtain new scintillators with high light output and high effective atomic number (Zeff), we performed anion-substitution for Cs2HfCl6 (CHC) scintillator, and then, we succeeded in growing Cs2HfI6 (CHI) single crystalline scintillator. It had Zeff of 58, which is the same as that of CHC, and had high light output of ∼70,000 photons/MeV with 700 nm emission. However, its scintillation decay time of ∼2.5 μs was slow for practical use as gamma-ray monitor. In this study, we performed Ce3+/Eu2+ doping to Hf4+ site to improve decay time of CHI, introducing the fast 5d-4f luminescence. Ce:CHI and Eu:CHI single crystals were finally obtained by the vertical Bridgman-Stockbarger method. The luminescence spectra of the Ce:CHI and Eu:CHI were very similar to that of the non-doped CHI, which would mean that no 5d-4f luminescence of Ce3+/Eu2+ was observed. The measured light output and decay time of Ce:CHI were ∼48,000 photon/MeV and 2.3 ± 0.1 μs, respectively. As for Eu:CHI, light output and decay time were ∼69,000 photon/MeV and 2.8 ± 0.1 μs, respectively.

  8. Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Jiang, Shu-Ye; Zhang, Min; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2018-03-01

    A negative capacitance field-effect transistor (NCFET) built with hafnium-based oxide is one of the most promising candidates for low power-density devices due to the extremely steep subthreshold swing (SS) and high on-state current induced by incorporating the ferroelectric material in the gate stack. Here, we demonstrated a two-dimensional (2D) back-gate NCFET with the integration of ferroelectric HfZrOx in the gate stack and few-layer MoS2 as the channel. Instead of using the conventional TiN capping metal to form ferroelectricity in HfZrOx, the NCFET was fabricated on a thickness-optimized Al2O3/indium tin oxide (ITO)/HfZrOx/ITO/SiO2/Si stack, in which the two ITO layers sandwiching the HfZrOx film acted as the control back gate and ferroelectric gate, respectively. The thickness of each layer in the stack was engineered for distinguishable optical identification of the exfoliated 2D flakes on the surface. The NCFET exhibited small off-state current and steep switching behavior with minimum SS as low as 47 mV/dec. Such a steep-slope transistor is compatible with the standard CMOS fabrication process and is very attractive for 2D logic and sensor applications and future energy-efficient nanoelectronic devices with scaling power supply.

  9. Processing, Structure and High Temperature Oxidation Properties of Polymer-Derived and Hafnium Oxide Based Ceramic Systems

    NASA Astrophysics Data System (ADS)

    Terauds, Kalvis

    Demands for hypersonic aircraft are driving the development of ultra-high temperature structural materials. These aircraft, envisioned to sustain Mach 5+, are expected to experience continuous temperatures of 1200--1800°C on the aircraft surface and temperatures as high as 2800°C in combustion zones. Breakthroughs in the development of fiber based ceramic matrix composites (CMCs) are opening the door to a new class of high-tech UHT structures for aerospace applications. One limitation with current carbon fiber or silicon carbide fiber based CMC technology is the inherent problem of material oxidation, requiring new approaches for protective environmental barrier coatings (EBC) in extreme environments. This thesis focuses on the development and characterization of SiCN-HfO2 based ceramic composite EBC systems to be used as a protective layer for silicon carbide fiber based CMCs. The presented work covers three main architectures for protection (i) multilayer films, (ii) polymer-derived HfSiCNO, and (iii) composite SiCN-HfO 2 infiltration. The scope of this thesis covers processing development, material characterization, and high temperature oxidation behavior of these three SiCN-HfO2 based systems. This work shows that the SiCN-HfO 2 composite materials react upon oxidation to form HfSiO4, offering a stable EBC in streaming air and water vapor at 1600°C.

  10. Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

    PubMed

    Kim, Hyun-Suk; Park, Joon Seok; Jeong, Hyun-Kwang; Son, Kyoung Seok; Kim, Tae Sang; Seon, Jong-Baek; Lee, Eunha; Chung, Jae Gwan; Kim, Dae Hwan; Ryu, Myungkwan; Lee, Sang Yoon

    2012-10-24

    A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.

  11. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.

  12. Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

    PubMed

    Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

    2018-01-01

    Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Extraction chromatographic separations of tantalum and tungsten from hafnium and complex matrix constituents

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Snow, Mathew S.; Finck, Martha R.; Carney, Kevin P.

    2017-02-01

    Ta, Hf, and W analyses from complex matrices (including environmental samples) require high purification of these analytes from each other and major/trace matrix constituents, however, current state-of-the-art Ta/Hf/W separations rely on traditional anion exchange approaches that suffer from relatively similar distribution coefficient (Kd) values for these analytes. This work reports assessment of three commercially available extraction chromatographic resins (TEVA, TRU, and UTEVA) for Ta/Hf/W separations. Batch contact studies show differences in Ta/W,Hf Kd values of up to 106, representing an improvement of a factor of 100 and 300 in Ta/Hf and Ta/W Kd values (respectively) over AG1x4 resin. Variations inmore » the Kd values as a function of HCl concentration for TRU resin show that this resin is well suited for Ta/Hf/W separations, with Ta/Hf, Ta/W, and W/Hf Kd value improvements of 10, 200, and 30 (respectively) over AG1x4 resin. Finally, analyses of digested soil samples (NIST 2710a) using TRU resin and tandem TEVA-TRU columns demonstrate the ability to achieve extremely high purification (>99%) of Ta and W from each other and Hf, as well as enabling very high purification of Ta and W from the major and trace elemental constituents present in soils, using a single chromatographic step.« less

  14. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cao, Lingyun; Lin, Zekai; Shi, Wenjie

    The dimensionality dependency of resonance energy transfer is of great interest due to its importance in understanding energy transfer on cell membranes and in low-dimension nanostructures. Light harvesting two-dimensional metal–organic layers (2D-MOLs) and three-dimensional metal–organic frameworks (3D-MOFs) provide comparative models to study such dimensionality dependence with molecular accuracy. Here we report the construction of 2D-MOLs and 3D-MOFs from a donor ligand 4,4',4''-(benzene-1,3,5-triyl-tris(ethyne-2,1-diyl))tribenzoate (BTE) and a doped acceptor ligand 3,3',3''-nitro-4,4',4''-(benzene-1,3,5-triyl-tris(ethyne-2,1-diyl))tribenzoate (BTE-NO2). These 2D-MOLs and 3D-MOFs are connected by similar hafnium clusters, with key differences in the topology and dimensionality of the metal–ligand connection. Energy transfer from donors to acceptors through themore » 2D-MOL or 3D-MOF skeletons is revealed by measuring and modeling the fluorescence quenching of the donors. We found that energy transfer in 3D-MOFs is more efficient than that in 2D-MOLs, but excitons on 2D-MOLs are more accessible to external quenchers as compared with those in 3D-MOFs. These results not only provide support to theoretical analysis of energy transfer in low dimensions, but also present opportunities to use efficient exciton migration in 2D materials for light-harvesting and fluorescence sensing.« less

  15. Modeling of thermo-mechanical fatigue and damage in shape memory alloy axial actuators

    NASA Astrophysics Data System (ADS)

    Wheeler, Robert W.; Hartl, Darren J.; Chemisky, Yves; Lagoudas, Dimitris C.

    2015-04-01

    The aerospace, automotive, and energy industries have seen the potential benefits of using shape memory alloys (SMAs) as solid state actuators. Thus far, however, these actuators are generally limited to non-critical components or over-designed due to a lack of understanding regarding how SMAs undergo thermomechanical or actuation fatigue and the inability to accurately predict failure in an actuator during use. The purpose of this study was to characterize the actuation fatigue response of Nickel-Titanium-Hafnium (NiTiHf) axial actuators and, in turn, use this characterization to predict failure and monitor damage in dogbone actuators undergoing various thermomechanical loading paths. Calibration data was collected from constant load, full cycle tests ranging from 200-600MPa. Subsequently, actuator lifetimes were predicted for four additional loading paths. These loading paths consisted of linearly varying load with full transformation (300-500MPa) and step loads which transition from zero stress to 300-400MPa at various martensitic volume fractions. Thermal cycling was achieved via resistive heating and convective cooling and was controlled via a state machine developed in LabVIEW. A previously developed fatigue damage model, which is formulated such that the damage accumulation rate is general in terms of its dependence on current and local stress and actuation strain states, was utilized. This form allows the model to be utilized for specimens undergoing complex loading paths. Agreement between experiments and simulations is discussed.

  16. High Temperature Materials for Chemical Propulsion Applications

    NASA Technical Reports Server (NTRS)

    Elam, Sandra; Hickman, Robert; O'Dell, Scott

    2007-01-01

    Radiation or passively cooled thrust chambers are used for a variety of chemical propulsion functions including apogee insertion, reaction control for launch vehicles, and primary propulsion for planetary spacecraft. The performance of these thrust chambers is limited by the operating temperature of available materials. Improved oxidation resistance and increased operating temperatures can be achieved with the use of thermal barrier coatings such as zirconium oxide (ZrO2) and hafnium oxide (HfO2). However, previous attempts to include these materials showed cracking and spalling of the oxide layer due to poor bonding. Current research at NASA's Marshall Space Flight Center (MSFC) has generated unique, high temperature material options for in-space thruster designs that are capable of up to 2500 C operating temperatures. The research is focused on fabrication technologies to form low cost Iridium,qF_.henium (Ir/Re) components with a ceramic hot wall created as an integral, functionally graded material (FGM). The goal of this effort is to further de?celop proven technologies for embedding a protective ceramic coating within the Ir/Re liner to form a robust functional gradient material. Current work includes the fabrication and testing of subscale samples to evaluate tensile, creep, thermal cyclic/oxidation, and thermophysical material properties. Larger test articles have also being fabricated and hot-fire tested to demonstrate the materials in prototype thrusters at 1O0 lbf thrust levels.

  17. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    NASA Astrophysics Data System (ADS)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type <1 0 0> Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  18. Extraction chromatographic separations of tantalum and tungsten from hafnium and complex matrix constituents

    DOE PAGES

    Snow, Mathew S.; Finck, Martha R.; Carney, Kevin P.; ...

    2017-01-08

    Ta, Hf, and W analyses from complex matrices (including environmental samples) require high purification of these analytes from each other and major/trace matrix constituents, but, current state-of-the-art Ta/Hf/W separations rely on traditional anion exchange approaches that suffer from relatively similar distribution coefficient (Kd) values for these analytes. Our work reports assessment of three commercially available extraction chromatographic resins (TEVA, TRU, and UTEVA) for Ta/Hf/W separations. Batch contact studies show differences in Ta/W,Hf Kd values of up to 10 6, representing an improvement of a factor of 100 and 300 in Ta/Hf and Ta/W Kd values (respectively) over AG1x4 resin. Furthermore,more » variations in the Kd values as a function of HCl concentration for TRU resin show that this resin is well suited for Ta/Hf/W separations, with Ta/Hf, Ta/W, and W/Hf Kd value improvements of 10, 200, and 30 (respectively) over AG1x4 resin. Finally, analyses of digested soil samples (NIST 2710a) using TRU resin and tandem TEVA-TRU columns demonstrate the ability to achieve extremely high purification (>99%) of Ta and W from each other and Hf, as well as enabling very high purification of Ta and W from the major and trace elemental constituents present in soils, using a single chromatographic step.« less

  19. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.

    PubMed

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K; Venkatesan, T; Ang, Kah-Wee

    2015-12-15

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec).

  20. Water mass circulation and weathering inputs in the Labrador Sea based on coupled Hf-Nd isotope compositions and rare earth element distributions

    NASA Astrophysics Data System (ADS)

    Filippova, Alexandra; Frank, Martin; Kienast, Markus; Rickli, Jörg; Hathorne, Ed; Yashayaev, Igor M.; Pahnke, Katharina

    2017-02-01

    The Labrador Sea is one of the key areas for deep water formation driving the Atlantic thermohaline circulation and thus plays an important role in Northern Hemisphere climatic fluctuations. In order to better constrain the overturning processes and the origins of the distinct water masses, combined dissolved Hf-Nd isotopic compositions and rare earth element (REE) distribution patterns were obtained from four water depth profiles along a section across the Labrador Sea. These were complemented by one surface sample off the southern tip of Greenland, three shallow water samples off the coast of Newfoundland, and two deep water samples off Nova Scotia. Although light REEs are markedly enriched in the surface waters off the coast of Newfoundland compared to north Atlantic waters, the REE concentration profiles are essentially invariant throughout the water column across the Labrador Sea. The hafnium concentrations of surface waters exhibit a narrow range between 0.6 and 1 pmol/kg but are not significantly higher than at depth. Neodymium isotope signatures (ɛNd) vary from unradiogenic values between -16.8 and -14.9 at the surface to more radiogenic values near -11.0 at the bottom of the Labrador Sea mainly reflecting the advection of the Denmark Strait Overflow Water and North East Atlantic Deep Water, the signatures of which are influenced by weathering contributions from Icelandic basalts. Unlike Nd, water column radiogenic Hf isotope signatures (ɛHf) are more variable representing diverse weathering inputs from the surrounding landmasses. The least radiogenic seawater ɛHf signatures (up to -11.7) are found in surface waters close to Greenland and near the Canadian margin. This reflects the influence of recirculating Irminger Current Waters, which are affected by highly unradiogenic inputs from Greenland. A three to four ɛHf unit difference is observed between Denmark Strait Overflow Water (ɛHf ∼ -4) and North East Atlantic Deep Water (ɛHf ∼ -0.1), although their source waters have essentially the same ɛNd signature. This most likely reflects different weathering signals of hafnium delivered to Denmark Strait Overflow Water and North East Atlantic Deep Water (incongruent weathering of old rocks from Greenland versus basaltic rocks from Iceland). In addition, the ɛHf data resolve two layers within the main body of Labrador Sea Water not visible in the ɛNd distribution, which are shallow Labrador Sea Water (ɛHf ∼ -2) and deep Labrador Sea Water (ɛHf ∼ -4.5). The latter layer was formed between the late 1980's and mid 1990's during the last cold state of the Labrador Sea and underwent substantial modification since its formation through the admixture of Irminger Water, Iceland Slope Water and North East Atlantic Deep Water, which is reflected in its less radiogenic ɛHf signature. The overall behavior of Hf in the water column suggests its higher sensitivity to local changes in weathering inputs on annual to decadal timescales. Although application of Hf isotopes as a tracer for global water mass mixing is complicated by their susceptibility to incongruent weathering inputs they are a promising tracer of local processes in restricted basins such as the Labrador Sea.

  1. International strategic minerals inventory summary report; zirconium

    USGS Publications Warehouse

    Towner, R.R.

    1992-01-01

    Zircon, a zirconium silicate, is currently the most important commercial zirconium-bearing mineral. Baddeleyite, a natural form of zirconia, is less important but has some specific end uses. Both zircon and baddeleyite occur in hard-rock and placer deposits, but at present all zircon production is from placer deposits. Most baddeleyite production is from hard-rock deposits, principally as a byproduct of copper and phosphate-rock mining. World zirconium resources in identified, economically exploitable deposits are about 46 times current production rates. Of these resources, some 71 percent are in South Africa, Australia, and the United States. The principal end uses of zirconium minerals are in ceramic applications and as refractories, abrasives, and mold linings in foundries. A minor amount, mainly of zircon, is used for the production of hafnium-free zirconium metal, which is used principally for sheathing fuel elements in nuclear reactors and in the chemical-processing industry, aerospace engineering, and electronics. Australia and South Africa are the largest zircon producers and account for more than 70 percent of world output; the United States and the Soviet Union account for another 20 percent. South Africa accounts for almost all the world's production of baddeleyite, which is about 2 percent of world production of contained zirconia. Australia and South Africa are the largest exporters of zircon. Unless major new deposits are developed in countries that have not traditionally produced zircon, the pattern of world production is unlikely to change by 2020. The proportions, however, of production that come from existing producing countries may change somewhat.

  2. Validation of updated neutronic calculation models proposed for Atucha-II PHWR. Part I: Benchmark comparisons of WIMS-D5 and DRAGON cell and control rod parameters with MCNP5

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mollerach, R.; Leszczynski, F.; Fink, J.

    2006-07-01

    In 2005 the Argentine Government took the decision to complete the construction of the Atucha-II nuclear power plant, which has been progressing slowly during the last ten years. Atucha-II is a 745 MWe nuclear station moderated and cooled with heavy water, of German (Siemens) design located in Argentina. It has a pressure-vessel design with 451 vertical coolant channels, and the fuel assemblies (FA) are clusters of 37 natural UO{sub 2} rods with an active length of 530 cm. For the reactor physics area, a revision and update calculation methods and models (cell, supercell and reactor) was recently carried out coveringmore » cell, supercell (control rod) and core calculations. As a validation of the new models some benchmark comparisons were done with Monte Carlo calculations with MCNP5. This paper presents comparisons of cell and supercell benchmark problems based on a slightly idealized model of the Atucha-I core obtained with the WIMS-D5 and DRAGON codes with MCNP5 results. The Atucha-I core was selected because it is smaller, similar from a neutronic point of view, and more symmetric than Atucha-II Cell parameters compared include cell k-infinity, relative power levels of the different rings of fuel rods, and some two-group macroscopic cross sections. Supercell comparisons include supercell k-infinity changes due to the control rods (tubes) of steel and hafnium. (authors)« less

  3. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  4. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    NASA Astrophysics Data System (ADS)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  5. ON THE GEOCHEMISTRY OF NIOBIUM AND TANTALUM IN CLAYS (in Russian)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pachadzhanov, D.N.

    1963-10-01

    With the aid of the spectral method with a preliminary enrichment in tannin, the niobium and tantalum content was determined in some humid and arid clays of the Russian platform. The investigated samples were composed of 354 specimens. The average content of niobium in humid clays is 0.0020%, of tantalum 0.00024% (the Nb/Ta ratio is 8.4) and in arid clays is respectively the content of niobium 0.00133% and the content of tantalum 0.00009% (the Nb/Ta ratio is 14.8). The average value of the content of niobium content for all studied clays is 0.00183% and of the tantalum content 0.00020%, themore » Nb/Ta ratio being 9.1. In clays an interconnection of niobium with tantalum, as well as with aluminium, titanium, zirconium, and hafnium was observed. However, on the background of this connection some separation of the named elements is noted. A tendency for the Nb/Ta ratio shift from the region of matter removal towards the center of the marine basin was observed. The study of niobium and tantalum distribution over different clay fractions showed that one part of elements is connected with zircon and titanium minerals in aleuosand fraction (0.1-- 0.01 mm). Another, approximately similar part is contained in the proper clay fraction (<0. 01 mm), the tantalum somewhat more concentrating in the aleurosand fraction and niobium in the clay fraction. (P.C.H.)« less

  6. Dielectric Studies on Binary Mixtures of Diethyl Ether (DEE) in Polar Solvents

    NASA Astrophysics Data System (ADS)

    Pradhan, S. K.; Dash, S. K.; Swain, M. D.; Swain, B. B.

    2011-11-01

    Dielectric constant (ɛ) of diethylether (DEE) in binary mixtures with four polar solvents such as n-butanl, i-butanol, t-butanol and tolune has been measured at 455 kHz and at a temperature 303.15 K. The refractive indices were measured at a regulated temperature by Pulfrich refractometer at sodium D-line. The data is used to evaluate mutual correlation factor gab, excess molar polarization and excess free energy of mixing ΔGab by using Winkelmann-Quitzsch equation for binary mixtures to asses the suitability of the polar solvents as modifiers. The trend of variation for these parameters exhibit marked dependence on the nature of alcohols. Diethylether is one of the solvent extractant used for the extraction and separation of zirconium and hafnium in reactor technology. The extractant is blended with appropriate polar modifiers for greater dispersal and more rapid phase disengagement. This facilitates in the elimination of the third organo-aqueous phase containing some of the metal ions. As such the study of molecular interaction among the component molecules has been undertaken in these binary mixtures using the dielectric route. The interaction parameters such as mutual correlation factor gab is found to be less than one in all alcohols, while it is negative in toluene upto 0.7 DEE molefraction and thereafter becoming positive. The nature of variation of the excess miolar polarization ΔP and excess free energy of mixing Gab tends to support the assessment of gab to choose a suitable polar modifier.

  7. Final Technical Report for DE-SC0001878 [Theory and Simulation of Defects in Oxide Materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chelikowsky, James R.

    2014-04-14

    We explored a wide variety of oxide materials and related problems, including materials at the nanoscale and generic problems associated with oxide materials such as the development of more efficient computational tools to examine these materials. We developed and implemented methods to understand the optical and structural properties of oxides. For ground state properties, our work is predominantly based on pseudopotentials and density functional theory (DFT), including new functionals and going beyond the local density approximation (LDA): LDA+U. To study excited state properties (quasiparticle and optical excitations), we use time dependent density functional theory, the GW approach, and GW plusmore » Bethe-Salpeter equation (GW-BSE) methods based on a many-body Green function approaches. Our work focused on the structural, electronic, optical and magnetic properties of defects (such as oxygen vacancies) in hafnium oxide, titanium oxide (both bulk and clusters) and related materials. We calculated the quasiparticle defect states and charge transition levels of oxygen vacancies in monoclinic hafnia. we presented a milestone G0W0 study of two of the crystalline phases of dye-sensitized TiO{sub 2} clusters. We employed hybrid density functional theory to examine the electronic structure of sexithiophene/ZnO interfaces. To identify the possible effect of epitaxial strain on stabilization of the ferromagnetic state of LaCoO{sub 3} (LCO), we compare the total energy of the magnetic and nonmagnetic states of the strained theoretical bulk structure.« less

  8. Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics

    DOE PAGES

    Bulusu, Anuradha; Singh, Ankit K.; Wang, Cheng-Yin; ...

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion (CTE) mismatch, elastic mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition.more » We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50{degree sign}C/85% RH. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.« less

  9. ANSL-V: ENDF/B-V based multigroup cross-section libraries for Advanced Neutron Source (ANS) reactor studies. Supplement 1

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wright, R.Q.; Renier, J.P.; Bucholz, J.A.

    1995-08-01

    The original ANSL-V cross-section libraries (ORNL-6618) were developed over a period of several years for the physics analysis of the ANS reactor, with little thought toward including the materials commonly needed for shielding applications. Materials commonly used for shielding applications include calcium barium, sulfur, phosphorous, and bismuth. These materials, as well as {sup 6}Li, {sup 7}Li, and the naturally occurring isotopes of hafnium, have been added to the ANSL-V libraries. The gamma-ray production and gamma-ray interaction cross sections were completely regenerated for the ANSL-V 99n/44g library which did not exist previously. The MALOCS module was used to collapse the 99n/44gmore » coupled library to the 39n/44g broad- group library. COMET was used to renormalize the two-dimensional (2- D) neutron matrix sums to agree with the one-dimensional (1-D) averaged values. The FRESH module was used to adjust the thermal scattering matrices on the 99n/44g and 39n/44g ANSL-V libraries. PERFUME was used to correct the original XLACS Legendre polynomial fits to produce acceptable distributions. The final ANSL-V 99n/44g and 39n/44g cross-section libraries were both checked by running RADE. The AIM module was used to convert the master cross-section libraries from binary coded decimal to binary format (or vice versa).« less

  10. Radiative engineering with refractory epsilon-near-zero metamaterials (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dyachenko, Pavel N.; Molesky, Sean; Petrov, Alexander Y.; Störmer, Michael; Krekeler, Tobias; Lang, Slawa; Ritter, Martin; Jacob, Zubin; Eich, Manfred

    2016-04-01

    Improvement in high-temperature stable spectrally selective absorbers and emitters is integral for the further development of thermophotovoltaic (TPV), lighting and solar thermal applications. However, the high operational temperatures (T>1000oC) required for efficient energy conversion, along with application specific criteria such as the operational range of low bandgap semiconductors, greatly restrict what can be accomplished with natural materials. Motivated by this challenge, we demonstrate the first example of high temperature thermal radiation engineering with metamaterials. By employing the naturally selective thermal excitation of radiative modes that occurs near topological transitions, we show that thermally stable highly selective emissivity features are achieved for temperatures up to 1000°C with low angular dependence in a sub-micron thick refractory tungsten/hafnium dioxide epsilon-near-zero (ENZ) metamaterial. We also investigate the main mechanisms of thermal degradation of the fabricated refractory metamaterial both in terms of optical performance and structural stability using spectral analysis and energy-dispersive X-ray spectroscopy (EDS) techniques. Importantly, we observe chemical stability of the constituent materials for temperatures up to 1000°C and structural stability beyond 1100°C. The scalable fabrication, requiring magnetron sputtering, and thermally robust optical properties of this metamaterial approach are ideally suited to high temperature emitter applications such as lighting or TPV. Our findings provide a first concrete proof of radiative engineering with high temperature topological transition in ENZ metamaterials, and establish a clear path for implementation in TPV energy harvesting applications.

  11. The Role of Citric Acid in the Stabilization of Nanoparticles and Colloidal Particles in the Environment: Measurement of Surface Forces between Hafnium Oxide Surfaces in the Presence of Citric Acid.

    PubMed

    Shinohara, Shuhei; Eom, Namsoon; Teh, E-Jen; Tamada, Kaoru; Parsons, Drew; Craig, Vincent S J

    2018-02-27

    The interactions between colloidal particles and nanoparticles determine solution stability and the structures formed when the particles are unstable to flocculation. Therefore, knowledge of the interparticle interactions is important for understanding the transport, dissolution, and fate of particles in the environment. The interactions between particles are governed by the surface properties of the particles, which are altered when species adsorb to the surface. The important interactions in the environment are almost never those between the bare particles but rather those between particles that have been modified by the adsorption of natural organic materials. Citric acid is important in this regard not only because it is present in soil but also as a model of humic and fulvic acids. Here we have studied the surface forces between the model metal oxide surface hafnia in the presence of citric acid in order to understand the stability of colloidal particles and nanoparticles. We find that citric acid stabilizes the particles over a wide range of pH at low to moderate ionic strength. At high ionic strength, colloidal particles will flocculate due to a secondary minimum, resulting in aggregates that are dense and easily redispersed. In contrast, nanoparticles stabilized by citric acid remain stable at high ionic strengths and therefore exist in solution as individual particles; this will contribute to their dispersion in the environment and the uptake of nanoparticles by mammalian cells.

  12. A review of refractory materials for vapor-anode AMTEC cells

    NASA Astrophysics Data System (ADS)

    King, Jeffrey C.; El-Genk, M. S.

    2000-01-01

    Recently, refractory alloys have been considered as structural materials for vapor-anode Alkali Metal Thermal-to-Electric Conversion (AMTEC) cells, for extended (7-15 years) space missions. This paper reviewed the existing database for refractory metals and alloys of potential use as structural materials for vapor-anode sodium AMTEC cells. In addition to requiring that the vapor pressure of the material be below 10-9 torr (133 nPa) at a typical hot side temperature of 1200 K, other screening considerations were: (a) low thermal conductivity, low thermal radiation emissivity, and low linear thermal expansion coefficient; (b) low ductile-to-brittle transition temperature, high yield and rupture strengths and high strength-to-density ratio; and (c) good compatibility with the sodium AMTEC operating environment, including high corrosion resistance to sodium in both the liquid and vapor phases. Nb-1Zr (niobium-1% zirconium) alloy is recommended for the hot end structures of the cell. The niobium alloy C-103, which contains the oxygen gettering elements zirconium and hafnium as well as titanium, is recommended for the colder cell structure. This alloy is stronger and less thermally conductive than Nb-1Zr, and its use in the cell wall reduces parasitic heat losses by conduction to the condenser. The molybdenum alloy Mo-44.5Re (molybdenum-44.5% rhenium) is also recommended as a possible alternative for both structures if known problems with oxygen pick up and embrittlement of the niobium alloys proves to be intractable. .

  13. Metallic glass alloys of Zr, Ti, Cu and Ni

    DOEpatents

    Lin, X.; Peker, A.; Johnson, W.L.

    1997-04-08

    At least quaternary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10{sup 3} K/s. Such alloys comprise titanium from 19 to 41 atomic percent, an early transition metal (ETM) from 4 to 21 atomic percent and copper plus a late transition metal (LTM) from 49 to 64 atomic percent. The ETM comprises zirconium and/or hafnium. The LTM comprises cobalt and/or nickel. The composition is further constrained such that the product of the copper plus LTM times the atomic proportion of LTM relative to the copper is from 2 to 14. The atomic percentage of ETM is less than 10 when the atomic percentage of titanium is as high as 41, and may be as large as 21 when the atomic percentage of titanium is as low as 24. Furthermore, when the total of copper and LTM are low, the amount of LTM present must be further limited. Another group of glass forming alloys has the formula (ETM{sub 1{minus}x}Ti{sub x}){sub a} Cu{sub b} (Ni{sub 1{minus}y}Co{sub y}){sub c} wherein x is from 0.1 to 0.3, y{center_dot}c is from 0 to 18, a is from 47 to 67, b is from 8 to 42, and c is from 4 to 37. This definition of the alloys has additional constraints on the range of copper content, b. 2 figs.

  14. Isoelectronic substitutions and aluminium alloying in the Ta-Nb-Hf-Zr-Ti high-entropy alloy superconductor

    NASA Astrophysics Data System (ADS)

    von Rohr, Fabian O.; Cava, Robert J.

    2018-03-01

    High-entropy alloys (HEAs) are a new class of materials constructed from multiple principal elements statistically arranged on simple crystallographic lattices. Due to the large amount of disorder present, they are excellent model systems for investigating the properties of materials intermediate between crystalline and amorphous states. Here we report the effects of systematic isoelectronic replacements, using Mo-Y, Mo-Sc, and Cr-Sc mixtures, for the valence electron count 4 and 5 elements in the body-centered cubic (BCC) Ta-Nb-Zr-Hf-Ti high-entropy alloy (HEA) superconductor. We find that the superconducting transition temperature Tc strongly depends on the elemental makeup of the alloy, and not exclusively its electron count. The replacement of niobium or tantalum by an isoelectronic mixture lowers the transition temperature by more than 60%, while the isoelectronic replacement of hafnium, zirconium, or titanium has a limited impact on Tc. We further explore the alloying of aluminium into the nearly optimal electron count [TaNb] 0.67(ZrHfTi) 0.33 HEA superconductor. The electron count dependence of the superconducting Tc for (HEA)Al x is found to be more crystallinelike than for the [TaNb] 1 -x(ZrHfTi) x HEA solid solution. For an aluminum content of x =0.4 the high-entropy stabilization of the simple BCC lattice breaks down. This material crystallizes in the tetragonal β -uranium structure type and superconductivity is not observed above 1.8 K.

  15. Square lattice honeycomb tri-carbide fuels for 50 to 250 KN variable thrust NTP design

    NASA Astrophysics Data System (ADS)

    Anghaie, Samim; Knight, Travis; Gouw, Reza; Furman, Eric

    2001-02-01

    Ultrahigh temperature solid solution of tri-carbide fuels are used to design an ultracompact nuclear thermal rocket generating 950 seconds of specific impulse with scalable thrust level in range of 50 to 250 kilo Newtons. Solid solutions of tri-carbide nuclear fuels such as uranium-zirconium-niobium carbide. UZrNbC, are processed to contain certain mixing ratio between uranium carbide and two stabilizing carbides. Zirconium or niobium in the tri-carbide could be replaced by tantalum or hafnium to provide higher chemical stability in hot hydrogen environment or to provide different nuclear design characteristics. Recent studies have demonstrated the chemical compatibility of tri-carbide fuels with hydrogen propellant for a few to tens of hours of operation at temperatures ranging from 2800 K to 3300 K, respectively. Fuel elements are fabricated from thin tri-carbide wafers that are grooved and locked into a square-lattice honeycomb (SLHC) shape. The hockey puck shaped SLHC fuel elements are stacked up in a grooved graphite tube to form a SLHC fuel assembly. A total of 18 fuel assemblies are arranged circumferentially to form two concentric rings of fuel assemblies with zirconium hydride filling the space between assemblies. For 50 to 250 kilo Newtons thrust operations, the reactor diameter and length including reflectors are 57 cm and 60 cm, respectively. Results of the nuclear design and thermal fluid analyses of the SLHC nuclear thermal propulsion system are presented. .

  16. Metallic glass alloys of Zr, Ti, Cu and Ni

    DOEpatents

    Lin, Xianghong; Peker, Atakan; Johnson, William L.

    1997-01-01

    At least quaternary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise titanium from 19 to 41 atomic percent, an early transition metal (ETM) from 4 to 21 atomic percent and copper plus a late transition metal (LTM) from 49 to 64 atomic percent. The ETM comprises zirconium and/or hafnium. The LTM comprises cobalt and/or nickel. The composition is further constrained such that the product of the copper plus LTM times the atomic proportion of LTM relative to the copper is from 2 to 14. The atomic percentage of ETM is less than 10 when the atomic percentage of titanium is as high as 41, and may be as large as 21 when the atomic percentage of titanium is as low as 24. Furthermore, when the total of copper and LTM are low, the amount of LTM present must be further limited. Another group of glass forming alloys has the formula (ETM.sub.1-x Ti.sub.x).sub.a Cu.sub.b (Ni.sub.1-y Co.sub.y).sub.c wherein x is from 0.1 to 0.3, y.cndot.c is from 0 to 18, a is from 47 to 67, b is from 8 to 42, and c is from 4 to 37. This definition of the alloys has additional constraints on the range of copper content, b.

  17. Qualification of APOLLO2 BWR calculation scheme on the BASALA mock-up

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vaglio-Gaudard, C.; Santamarina, A.; Sargeni, A.

    2006-07-01

    A new neutronic APOLLO2/MOC/SHEM/CEA2005 calculation scheme for BWR applications has been developed by the French 'Commissariat a l'Energie Atomique'. This scheme is based on the latest calculation methodology (accurate mutual and self-shielding formalism, MOC treatment of the transport equation) and the recent JEFF3.1 nuclear data library. This paper presents the experimental validation of this new calculation scheme on the BASALA BWR mock-up The BASALA programme is devoted to the measurements of the physical parameters of high moderation 100% MOX BWR cores, in hot and cold conditions. The experimental validation of the calculation scheme deals with core reactivity, fission rate maps,more » reactivity worth of void and absorbers (cruciform control blades and Gd pins), as well as temperature coefficient. Results of the analysis using APOLLO2/MOC/SHEM/CEA2005 show an overestimation of the core reactivity by 600 pcm for BASALA-Hot and 750 pcm for BASALA-Cold. Reactivity worth of gadolinium poison pins and hafnium or B{sub 4}C control blades are predicted by APOLLO2 calculation within 2% accuracy. Furthermore, the radial power map is well predicted for every core configuration, including Void configuration and Hf / B{sub 4}C configurations: fission rates in the central assembly are calculated within the {+-}2% experimental uncertainty for the reference cores. The C/E bias on the isothermal Moderator Temperature Coefficient, using the CEA2005 library based on JEFF3.1 file, amounts to -1.7{+-}03 pcm/ deg. C on the range 10 deg. C-80 deg. C. (authors)« less

  18. Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.

    PubMed

    Fu, Lei; Wang, Feng; Wu, Bin; Wu, Nian; Huang, Wei; Wang, Hanlin; Jin, Chuanhong; Zhuang, Lin; He, Jun; Fu, Lei; Liu, Yunqi

    2017-08-01

    As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS 2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS 2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS 2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS 2 back-gate field-effect transistors display a competitive mobility of 7.6 cm 2 V -1 s -1 and an ultrahigh on/off ratio exceeding 10 8 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS 2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10 5 A W -1 , which is 10 9 -fold higher than 9 × 10 -5 A W -1 obtained from the multilayer MoS 2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10 5 and an ultrahigh detectivity exceeding 4.01 × 10 12 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Effect of Brownian motion on reduced agglomeration of nanostructured metal oxide towards development of efficient cancer biosensor.

    PubMed

    Kumar, Suveen; Ashish; Kumar, Saurabh; Augustine, Shine; Yadav, Santosh; Yadav, Birendra Kumar; Chauhan, Rishi Pal; Dewan, Ajay Kumar; Malhotra, Bansi Dhar

    2018-04-15

    We report results of the studies relating to fabrication of nanostructured metal oxide (NMO) based cancer biosensor. With the help of 2D electroactive reduced graphene oxide (RGO), we successfully inhibited the Brownian motion of NMO that led to reduced agglomeration of NMO. The nanostructured hafnium oxide (nHfO 2 ) was used as a model NMO. The reduced agglomeration of nHfO 2 was achieved through controlled hydrothermal synthesis and investigated via nanoparticles tracking analysis (NTA). X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM) techniques were used for phase identification as well as morphological analysis of the synthesized nanohybrid (nHfO 2 @RGO) material. The 3-aminopropyl triethoxysilane (APTES) was used for the functionalization of nHfO 2 @RGO and electrophoretic deposition (EPD) technique was used for its deposition onto ITO coated glass electrode. Further, antibodies of cancer biomarker (anti-CYFRA-21-1) were immobilized via EDC-NHS chemistry and Bovine serum albumin (BSA) was used for blocking of the non-specific binding sites. The electrochemical response studies of fabricated immunoelectrode (BSA/anti-CYFRA-21-1/APTES/nHfO 2 @RGO/ITO) revealed higher sensitivity (18.24µAmLng -1 ), wide linear detection range (0 to 30ngmL -1 ), with remarkable lower detection limit (0.16ngmL -1 ). The obtained results showed good agreement with the concentration of CYFRA-21-1 obtained through enzyme linked immunosorbent assay (ELISA) in saliva samples of oral cancer patients. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

    2015-11-01

    We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

  1. The effect of tantalum on the structure/properties of two polycrystalline nickel-base superalloys: B-1900 + Hf MAR-M247. M.S. Thesis, Final Report

    NASA Technical Reports Server (NTRS)

    Janowski, G. M.

    1985-01-01

    The microstructure, phase compositions, and phase fractions were studied in conventionally cast B-1900 + Hf and both conventionally cast and directionally solidified MAR-M247 as a function of tantalum concentration. The hot tensile and creep rupture properties of the solutionized and aged MAR-M247-type alloys were also determined as a function of tantalum level. The effects of tantalum on the microstructure and phase compositions of B-1900 + Hf and MAR-M247 (conventionally cast and directionally solidified) were found to be very similar. The addition of tantalum to the as cast and heat treated alloys was shown to cause the partial replacement of the Hf in the MC carbides by Ta, although the degree of replacement was decreased by the solutionizing and aging heat treatment. The gamma prime and minor phase fractions (primarily MC type carbides) both increased approximately linearly with tantalum concentration. The gamma prime phase compositions were relatively insensitive to tantalum variations with the exception of the tantalum and/or hafnium levels. Bulk tantalum additions increased the tantalum, chromium, and cobalt levels of the gamma phase in both alloy series. The increase in the concentrations of the latter two elements in the gamma phase was a result of the decrease in the gamma phase fraction with increasing bulk tantalum concentration and constant gamma/gamma prime partitioning ratio. Tantalum additions increased the yield stress and ultimate tensile strength of the directionally solidified MAR-M247 type alloys and had no significant effect on ductility.

  2. Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate.

    PubMed

    Meena, Jagan Singh; Chu, Min-Ching; Kuo, Shiao-Wei; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-03-20

    We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free film growth had occurred on the film surface. After oxygen (O(2)) plasma pretreatment and subsequent annealing at 250 degrees C, the film on the PI substrate exhibited a low leakage current density of 3.64 x 10(-9) A cm(-2) at 5 V and a maximum capacitance density of 10.35 fF microm(-2) at 1 MHz. The as-deposited sol-gel film was completely oxidized when employing O(2) plasma at a relatively low temperature (ca. 250 degrees C), thereby enhancing the electrical performance. We employed X-ray photoelectron spectroscopy (XPS) at both high and low resolution to examine the chemical composition of the film subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy, revealed that O(2) plasma treatment was the most effective process for the complete oxidation of hafnium atoms at low temperature. A study of the insulator properties indicated the excellent bendability of our MIM capacitor; the flexible PI substrate could be bent up to 10(5) times and folded to near 360 degrees without any deterioration in its electrical performance.

  3. Ultrahigh-Temperature Ceramics

    NASA Technical Reports Server (NTRS)

    Johnson, Sylvia M.; Ellerby, Donald T.; Beckman, Sarah E.; Irby, Edward; Gasch, Matthew J.; Gusman, Michael I.

    2007-01-01

    Ultrahigh temperature ceramics (UHTCs) are a class of materials that include the diborides of metals such as hafnium and zirconium. The materials are of interest to NASA for their potential utility as sharp leading edges for hypersonic vehicles. Such an application requires that the materials be capable of operating at temperatures, often in excess of 2,000 C. UHTCs are highly refractory and have high thermal conductivity, an advantage for this application. UHTCs are potentially applicable for other high-temperature processing applications, such as crucibles for molten-metal processing and high-temperature electrodes. UHTCs were first studied in the 1960 s by the U.S. Air Force. NASA s Ames Research Center concentrated on developing materials in the HfB2/SiC family for a leading-edge application. The work focused on developing a process to make uniform monolithic (2-phase) materials, and on the testing and design of these materials. Figure 1 shows arc-jet models made from UHTC materials fabricated at Ames. Figure 2 shows a cone being tested in the arc-jet. Other variations of these materials being investigated elsewhere include zirconium based materials and fiber-reinforced composites. Current UHTC work at Ames covers four broad topics: monoliths, coatings, composites, and processing. The goals include improving the fracture toughness, thermal conductivity and oxidation resistance of monolithic UHTCs and developing oxidation-resistant UHTC coatings for thermal-protection-system substrates through novel coating methods. As part of this effort, researchers are exploring compositions and processing changes that have yielded improvements in properties. Computational materials science and nanotechnology are being explored as approaches to reduce materials development time and improve and tailor properties.

  4. Self-organized porphyrin nanomaterials for solar energy harvesting

    NASA Astrophysics Data System (ADS)

    Radivojevic, Ivana

    New concepts in the design and function of organic dyes as sensitizers for solar energy harvesting are needed. Commercial viability constrains these designs: (a) cost effective synthesis, (b) long-term stability, and (c) an important goal is to reduce the environmental impact of the product at the end of its life cycle. Simple porphyrinoid dyes meet these constraints, but new modes of incorporation into devices are needed to increase the efficiency of charge separation that drives any photonic device designed to harvest light. In this thesis, we will show how complex material architectures on surfaces need not to be the result of complex molecular structures or strong intermolecular forces that form in solution and deposit intact onto surfaces. Varying environmental conditions we can dictate morphology of self-organized structures on surfaces. These studies provide further insights into the design principles, processing, and extent of electron and energy transfer in supramolecular porphyrin materials. We are also developing a new strategy to couple porphyrinoid dyes to oxide surfaces using hafnium and zirconium metalloporphyrins and metallophthalocyanines.The mode of dye attachment to oxide surfaces is a key parameter for the construction of efficient dye sensitized solar cells. Porphyrinoid dyes containing oxophylic group (IV) metal ions that protrude from on face of the macrocycle allow connections directly to oxide surfaces, wherein the metal ion serves as the conduit. Since the charge transport efficiency is mediated by appropriate matching of molecular HOMO-LUMO gaps to semiconductor band gaps, we will show characterized solution phase ground and excited redox potentials of these dyes, and also photophysical properties of dye excited state using transient absorbance spectroscopy.

  5. Continental igneous rock composition: A major control of past global chemical weathering

    PubMed Central

    Bataille, Clément P.; Willis, Amy; Yang, Xiao; Liu, Xiao-Ming

    2017-01-01

    The composition of igneous rocks in the continental crust has changed throughout Earth’s history. However, the impact of these compositional variations on chemical weathering, and by extension on seawater and atmosphere evolution, is largely unknown. We use the strontium isotope ratio in seawater [(87Sr/86Sr)seawater] as a proxy for chemical weathering, and we test the sensitivity of (87Sr/86Sr)seawater variations to the strontium isotopic composition (87Sr/86Sr) in igneous rocks generated through time. We demonstrate that the 87Sr/86Sr ratio in igneous rocks is correlated to the epsilon hafnium (εHf) of their hosted zircon grains, and we use the detrital zircon record to reconstruct the evolution of the 87Sr/86Sr ratio in zircon-bearing igneous rocks. The reconstructed 87Sr/86Sr variations in igneous rocks are strongly correlated with the (87Sr/86Sr)seawater variations over the last 1000 million years, suggesting a direct control of the isotopic composition of silicic magmatism on (87Sr/86Sr)seawater variations. The correlation decreases during several time periods, likely reflecting changes in the chemical weathering rate associated with paleogeographic, climatic, or tectonic events. We argue that for most of the last 1000 million years, the (87Sr/86Sr)seawater variations are responding to changes in the isotopic composition of silicic magmatism rather than to changes in the global chemical weathering rate. We conclude that the (87Sr/86Sr)seawater variations are of limited utility to reconstruct changes in the global chemical weathering rate in deep times. PMID:28345044

  6. Electromagnetic characterization of advanced nanostructured materials and multilayer design optimization for metrological and low radar observability applications

    NASA Astrophysics Data System (ADS)

    Micheli, Davide; Pastore, Roberto; Delfini, Andrea; Giusti, Alfonso; Vricella, Antonio; Santoni, Fabio; Marchetti, Mario; Tolochko, Oleg; Vasilyeva, Ekaterina

    2017-05-01

    In this work the electromagnetic characterization of composite materials reinforced with carbon and metallic nanoparticles is presented. In particular, the electric permittivity and the magnetic permeability as a function of the frequency are used to evaluate the electromagnetic absorption capability of the nanocomposites. The aim is the study of possible applications in advanced coating able to tune the electromagnetic reflectivity of satellite surfaces in specific frequency ranges, in a special way for those surfaces that for some reason could be exposed to the antenna radiation pattern. In fact, the interference caused by the spurious electromagnetic multipath due to good electric conductive satellite surface components could in turn affect the main radiation lobe of TLC and Telemetry antennas, thus modifying its main propagation directions and finally increasing the microwave channel pathloss. The work reports the analysis of different nanostructured materials in the 2-10 GHz frequency range. The employed nanopowders are of carbon nanotubes, cobalt, argent, titanium, nickel, zinc, copper, iron, boron, bismuth, hafnium, in different weight percentages versus the hosting polymeric matrix. The materials are classified as a function of their electromagnetic losses capability by taking into account of both electric and magnetic properties. The possibility to design multi-layered structures optimized to provide specific microwave response is finally analyzed by the aid of swam intelligence algorithm. This novel technique is in general interesting for metrological purpose and remote sensing purposes, and can be effectively used in aerospace field for frequency selective materials design, in order to reduce the aircraft/spacecraft radar observability at certain frequencies.

  7. Recycle of Zirconium from Used Nuclear Fuel Cladding: A Major Element of Waste Reduction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Collins, Emory D; DelCul, Guillermo D; Terekhov, Dmitri

    2011-01-01

    Feasibility tests were initiated to determine if the zirconium in commercial used nuclear fuel (UNF) cladding can be recovered in sufficient purity to permit re-use, and if the recovery process can be operated economically. Initial tests are being performed with unirradiated, non-radioactive samples of various types of Zircaloy materials that are used in UNF cladding to develop the recovery process and determine the degree of purification that can be obtained. Early results indicate that quantitative recovery can be accomplished and product contamination with alloy constituents can be controlled sufficiently to meet purification requirements. Future tests with actual radioactive UNF claddingmore » are planned. The objective of current research is to determine the feasibility of recovery and recycle of zirconium from used fuel cladding wastes. Zircaloy cladding, which contains 98+% of hafnium-free zirconium, is the second largest mass, on average {approx}25 wt %, of the components in used U.S. light-water-reactor fuel assemblies. Therefore, recovery and recycle of the zirconium would enable a large reduction in geologic waste disposal for advanced fuel cycles. Current practice is to compact or grout the cladding waste and store it for subsequent disposal in a geologic repository. This paper describes results of initial tests being performed with unirradiated, non-radioactive samples of various types of Zircaloy materials that are used in UNF cladding to develop the recovery process and determine the degree of purification that can be obtained. Future tests with actual radioactive UNF cladding are planned.« less

  8. TUNGSTEN BRONZE RELATED NON-NOBLE ELECTROCATALYSTS.

    DTIC Science & Technology

    FUEL CELLS, *CATALYSTS), (*OXYGEN, *ELECTRODES), (* SILICIDES , ELECTRODES), (*CARBIDES, ELECTRODES), (*TUNGSTEN COMPOUNDS, *ELECTROCHEMISTRY...CATALYSTS, TITANIUM COMPOUNDS, ZIRCONIUM COMPOUNDS, VANADIUM COMPOUNDS, NIOBIUM COMPOUNDS, TUNGSTEN COMPOUNDS, TANTALUM COMPOUNDS, MOLYBDENUM COMPOUNDS, SULFURIC ACID, CRYSTAL GROWTH, SODIUM COMPOUNDS

  9. Pharmacists' Perceptions of the Economic Value of Compounded Pharmaceuticals: A Comparison of Compounded and Commercial Pharmaceuticals in Select Disease States.

    PubMed

    Lobb, William B; Wilkin, Noel E; Holmes, Erin R

    2015-01-01

    Studies have been conducted to assess patient satisfaction with compounded pharmaceuticals and to directly compare compounded pharmaceuticals with their comparable commercial pharmaceuticals. Yet, the economic value of or potential for economic value derived from compounded pharmaceuticals relative to commercial pharmaceuticals is still not known. Therefore, the purpose of this study was to assess and compare compounding and non-compounding pharmacists' perceptions of the economic value of compounded preparations relative to commercial products. In-depth interviews with 10 compounding pharmacists and physicians who prescribe compounded prescription pharmaceutical preparations were conducted to help develop a self-administered questionnaire distributed to 50 compounding and 50 non-compounding pharmacists. Compounding and non-compounding pharmacists' perceptions differed most often in the context of compounded pharmaceuticals for pediatric patients. However, both groups responded with moderate agreement that compounded prescription treatments are more profitable for the pharmacy than commercial prescription treatments in most therapeutic areas. This research sought to understand the perception of pharmacists of areas for potential direct and indirect economic cost savings as a result of compounding. For all items whereby compounding and non-compounding pharmacists' ratings were significantly different, compounding pharmacists more strongly believed that compounding pharmaceuticals offered benefit and vice versa. The differences in ratings that were most common were those that directly compared the economic value of compounding and commercial pharmaceuticals, with compounding pharmacists more strongly agreeing with the potential cost savings associated with compounded pharmaceuticals. Based on these findings, prescription compounds are believed to have a benefit to the health system by those who provide them. Future research should proactively explore the economic benefit of compounded preparations compared to conventionally manufactured products to determine the economic value of compounded pharmaceuticals for patients, pharmacies, physicians, and the healthcare system.

  10. Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

    NASA Astrophysics Data System (ADS)

    Kast, Matthew G.

    Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

  11. Microstructure and Phase Stability of Single Crystal NiAl Alloyed with Hf and Zr

    NASA Technical Reports Server (NTRS)

    Locci, I. E.; Dickerson, R. M.; Garg, A.; Noebe, R. D.; Whittenberger, J. D.; Nathal, M. V.; Darolia, R.

    1996-01-01

    Six near stoichiometric, NiAl single-crystal alloys, with 0.05-1.5 at.% of Hf and Zr additions plus Si impurities, were microstructurally analyzed in the as-cast, homogenized, and aged conditions. Hafnium-rich interdendritic regions, containing the Heusler phase (Ni2AlHf), were found in all the as-cast alloys containing Hf. Homogenization heat treatments partially reduced these interdendritic segregated regions. Transmission electron microscopy (TEM) observations of the as-cast and homogenized microstructures revealed the presence of a high density of fine Hf (or Zr) and Si-rich precipitates. These were identified as G-phase, Nil6X6Si7, or as an orthorhombic NiXSi phase, where X is Hf or Zr. Under these conditions the expected Heusler phase (beta') was almost completely absent. The Si responsible for the formation of the G and NiHfSi phases is the result of molten metal reacting with the Si-containing crucible used during the casting process. Varying the cooling rates after homogenization resulted in the refinement or complete suppression of the G and NiHfSi phases. In some of the alloys studied, long-term aging heat treatments resulted in the formation of Heusler precipitates, which were more stable at the aging temperature and coarsened at the expense of the G-phase. In other alloys, long-term aging resulted in the formation of the NiXSi phase. The stability of the Heusler or NiXSi phases can be traced to the reactive element (Hf or Zr) to silicon ratio. If the ratio is high, then the Heusler phase appears stable after long time aging. If the ratio is low, then the NiHfSi phase appears to be the stable phase.

  12. Small rocket research and technology

    NASA Technical Reports Server (NTRS)

    Schneider, Steven; Biaglow, James

    1993-01-01

    Small chemical rockets are used on nearly all space missions. The small rocket program provides propulsion technology for civil and government space systems. Small rocket concepts are developed for systems which encompass reaction control for launch and orbit transfer systems, as well as on-board propulsion for large space systems and earth orbit and planetary spacecraft. Major roles for on-board propulsion include apogee kick, delta-V, de-orbit, drag makeup, final insertions, north-south stationkeeping, orbit change/trim, perigee kick, and reboost. The program encompasses efforts on earth-storable, space storable, and cryogenic propellants. The earth-storable propellants include nitrogen tetroxide (NTO) as an oxidizer with monomethylhydrazine (MMH) or anhydrous hydrazine (AH) as fuels. The space storable propellants include liquid oxygen (LOX) as an oxidizer with hydrazine or hydrocarbons such as liquid methane, ethane, and ethanol as fuels. Cryogenic propellants are LOX or gaseous oxygen (GOX) as oxidizers and liquid or gaseous hydrogen as fuels. Improved performance and lifetime for small chemical rockets are sought through the development of new predictive tools to understand the combustion and flow physics, the introduction of high temperature materials to eliminate fuel film cooling and its associated combustion inefficiency, and improved component designs to optimize performance. Improved predictive technology is sought through the comparison of both local and global predictions with experimental data. Results indicate that modeling of the injector and combustion process in small rockets needs improvement. High temperature materials require the development of fabrication processes, a durability data base in both laboratory and rocket environments, and basic engineering property data such as strength, creep, fatigue, and work hardening properties at both room and elevated temperature. Promising materials under development include iridium-coated rhenium and a ceramic composite of mixed hafnium carbide and tantalum carbide reinforced with graphite fibers.

  13. Surface and Interface Chemistry for Gate Stacks on Silicon

    NASA Astrophysics Data System (ADS)

    Frank, M. M.; Chabal, Y. J.

    This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

  14. Fulvene to cyclopentadienyl conversion with homoleptic complexes of zirconium and hafnium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rogers, J.S.; Lachicotte, R.J.; Bazan, G.C.

    1999-09-27

    The reaction of 6,6-dimethylfulvene with M(CH{sub 2}Ph){sub 4} (M = Zr, Hf) in benzene gives [{eta}{sup 5}-C{sub 5}H{sub 4}(CMe{sub 2}CH{sub 2}Ph)]M(CH{sub 2}Ph){sub 3} (1, M = Zr; 2, M = Hf) without any observable byproducts. A similar reaction for M = Ti is not observed. The single-crystal X-ray study of 1 shows a three-legged piano-stool geometry with an {eta}{sup 2}-bound benzyl ligand. A second equivalent of 6,6-dimethylfulvene does not react with either 1 or 2. The bulkier 6,6-diphenyfulvene only reacts cleanly with the more Lewis acidic Hf(CH{sub 2}Ph){sub 4} to give [{eta}{sup 5}-C{sub 5}H{sub 4}(CPh{sub 2}CH{sub 2}Ph)]Hf(CH{sub 2}Ph){sub 3} (3).more » Using the tetraamido complexes M(NMe{sub 2}Ph){sub 4} and 6,6-dimethylfulvene, one obtains dimethylamine and [{eta}{sup 5}-C{sub 5}H{sub 4}(CMeCH{sub 2})]M(NMe{sub 2}){sub 3} (4 for M = Zr) in good yield. These products are formally derived from the deprotonation of a fulvene methyl group and subsequent coordination of the resulting 2-propenylcyclopentadienyl fragment. Reaction of 4 and 6,6-dimethylfulvene affords the bent metallocene [{eta}{sup 5}-C{sub 5}H{sub 4}(CMeCH{sub 2})]{sub 2}Zr(NMe{sub 2}){sub 2} (5). Excess 8,8-dimethylbenzofulvene and M(NMe{sub 2}){sub 4} provides exclusively the product with only one coordinated indene.« less

  15. Monoclinic to cubic phase transformation and photoluminescence properties in Hf1-xSmxO2 (x = 0-0.12) nanoparticles

    NASA Astrophysics Data System (ADS)

    Kumar, Sandeep; Rai, S. B.; Rath, Chandana

    2018-02-01

    Bulk hafnium oxide (HfO2) exhibits the monoclinic phase at room temperature which transforms to tetragonal and cubic phases at 1700 and 2600 °C, respectively, under ambient conditions. For the first time, we observe a monoclinic to stable cubic phase transformation at room temperature in nanoparticles of HfO2 by incorporating Sm3+ ions up to 12 at. %. Although the monoclinic structure is retained at 1 at. % of Sm, a mixed phase of monoclinic and cubic is observed at intermediate Sm concentration (5-11 at. %). Le-Bail profile refinement of X-ray diffraction patterns confirms the monoclinic to cubic phase transformation with increasing Sm3+ ion concentration. While the significant difference in ionic radii of Sm3+ and Hf4+ ion induces strain in the lattice above 9 at. %, a lower valency of Sm produces oxygen vacancy leading to 8-fold coordination with Sm3+ ion and stabilizes the cubic phase at room temperature. Not only the particle size obtained from transmission electron micrograph (TEM) matches well with the size calculated from the Williamson-Hall plot, the lattice spacing estimated from high resolution TEM also confirms the monoclinic and cubic phases in HfO2 and Hf0.88Sm0.12O2, respectively. Apart from phase transformation induced by Sm3+ ions, photoluminescence studies demonstrate an excellent emission in near green and red regions in Hf1-xSmxO2 nanoparticles. A schematic energy band diagram has been proposed based on the excitation and emission processes involved in HfO2 and Hf0.99Sm0.01O2 nanoparticles.

  16. In search of the Earth-forming reservoir: Mineralogical, chemical, and isotopic characterizations of the ungrouped achondrite NWA 5363/NWA 5400 and selected chondrites

    NASA Astrophysics Data System (ADS)

    Burkhardt, Christoph; Dauphas, Nicolas; Tang, Haolan; Fischer-GöDde, Mario; Qin, Liping; Chen, James H.; Rout, Surya S.; Pack, Andreas; Heck, Philipp R.; Papanastassiou, Dimitri A.

    2017-05-01

    High-precision isotope data of meteorites show that the long-standing notion of a "chondritic uniform reservoir" is not always applicable for describing the isotopic composition of the bulk Earth and other planetary bodies. To mitigate the effects of this "isotopic crisis" and to better understand the genetic relations of meteorites and the Earth-forming reservoir, we performed a comprehensive petrographic, elemental, and multi-isotopic (O, Ca, Ti, Cr, Ni, Mo, Ru, and W) study of the ungrouped achondrites NWA 5363 and NWA 5400, for both of which terrestrial O isotope signatures were previously reported. Also, we obtained isotope data for the chondrites Pillistfer (EL6), Allegan (H6), and Allende (CV3), and compiled available anomaly data for undifferentiated and differentiated meteorites. The chemical compositions of NWA 5363 and NWA 5400 are strikingly similar, except for fluid mobile elements tracing desert weathering. We show that NWA 5363 and NWA 5400 are paired samples from a primitive achondrite parent-body and interpret these rocks as restite assemblages after silicate melt extraction and siderophile element addition. Hafnium-tungsten chronology yields a model age of 2.2 ± 0.8 Myr after CAI, which probably dates both of these events within uncertainty. We confirm the terrestrial O isotope signature of NWA 5363/NWA 5400; however, the discovery of nucleosynthetic anomalies in Ca, Ti, Cr, Mo, and Ru reveals that the NWA5363/NWA 5400 parent-body is not the "missing link" that could explain the composition of the Earth by the mixing of known meteorites. Until this "missing link" or a direct sample of the terrestrial reservoir is identified, guidelines are provided of how to use chondrites for estimating the isotopic composition of the bulk Earth.

  17. Hafnium influence on the microstructure of FeCrAl alloys

    NASA Astrophysics Data System (ADS)

    Geanta, V.; Voiculescu, I.; Stanciu, E.-M.

    2016-06-01

    Due to their special properties at high temperatures, FeCrAl alloys micro-alloyed with Zr can be regarded as potential materials for use at nuclear power plants, generation 4R. These materials are resistant to oxidation at high temperatures, to corrosion, erosion and to the penetrating radiations in liquid metal environments. Also, these are able to form continuously, by the self-generation process of an oxide coating with high adhesive strength. The protective oxide layers must be textured and regenerable, with a good mechanical strength, so that crack and peeling can not appear. To improve the mechanical and chemical characteristics of the oxide layer, we introduced limited quantities of Zr, Ti, Y, Hf, Ce in the range of 1-3%wt in the FeCrAl alloy. These elements, with very high affinity to the oxygen, are capable to stabilize the alumina structure and to improve the oxide adherence to the metallic substrate. FeCrAl alloys microalloyed with Hf were prepared using VAR (Vacuum Arc Remelting) unit, under high argon purity atmosphere. Three different experimental alloys have been prepared using the same metallic matrix of Fe-14Cr-5Al, by adding of 0.5%wt Hf, 1.0%wt Hf and respectively 1.5%wt Hf. The microhardness values for the experimental alloys have been in the range 154 ... 157 HV0.2. EDAX analyses have been performed to determine chemical composition on the oxide layer and in the bulk of sample and SEM analyze has been done to determine the microstructural features. The results have shown the capacity of FeCrAl alloy to form oxide layers, with different texture and rich in elements such as Al and Hf.

  18. Quasiparticle energies, excitonic effects, and dielectric screening in transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Schleife, André

    Using the power of high-performance super computers, computational materials scientists nowadays employ highly accurate quantum-mechanical approaches to reliably predict materials properties. In particular, many-body perturbation theory is an excellent framework for performing theoretical spectroscopy on novel materials including transparent conducting oxides, since this framework accurately describes quasiparticle and excitonic effects.We recently used hybrid exchange-correlation functionals and an efficient implementation of the Bethe-Salpeter approach to investigate several important transparent conducting oxides. Despite their exceptional potential for applications in photovoltaics and optoelectronics their optical properties oftentimes remain poorly understood: Our calculations explain the optical spectrum of bixbyite indium oxide over a very large photon energy range, which allows us to discuss the importance of quasiparticle and excitonic effects at low photon energies around the absorption onset, but also for excitations up to 40 eV. We show that in this regime the energy dependence of the electronic self energy cannot be neglected. Furthermore, we investigated the influence of excitonic effects on optical absorption for lanthanum-aluminum oxide and hafnium oxide. Their complicated conduction band structures require an accurate description of quasiparticle energies and we find that for these strongly polar materials, a contribution of the lattice polarizability to dielectric screening needs to be taken into account. We discuss how this affects the electron-hole interaction and find a strong influence on excitonic effects.The deep understanding of electronic excitations that can be obtained using these modern first-principles techniques, eventually will allow for computational materials design, e.g. of band gaps, densities of states, and optical properties of transparent conducting oxides and other materials with societally important applications.

  19. Long term stability of nanowire nanoelectronics in physiological environments.

    PubMed

    Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

    2014-03-12

    Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

  20. Long Term Stability of Nanowire Nanoelectronics in Physiological Environments

    PubMed Central

    2015-01-01

    Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease. PMID:24479700

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