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Sample records for half-metallic heusler alloys

  1. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

    SciTech Connect

    Gao, G. Y. Yao, Kai-Lun

    2013-12-02

    High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0{sub 3}-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V{sub 3}Si and V{sub 3}Ge, half-metallic antiferromagnets of Mn{sub 3}Al and Mn{sub 3}Ga, half-metallic ferrimagnets of Mn{sub 3}Si and Mn{sub 3}Ge, and a spin gapless semiconductor of Cr{sub 3}Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

  2. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys

    NASA Astrophysics Data System (ADS)

    Gao, G. Y.; Yao, Kai-Lun

    2013-12-01

    High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D03-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V3Si and V3Ge, half-metallic antiferromagnets of Mn3Al and Mn3Ga, half-metallic ferrimagnets of Mn3Si and Mn3Ge, and a spin gapless semiconductor of Cr3Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

  3. Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

    SciTech Connect

    Munira, Kamaram; Romero, Jonathon; Butler, William H.

    2014-05-07

    Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr{sub 2}MnAs-MgO system with MnAs interface layers and Co{sub 2}MnSi-MgO system with Mn{sub 2} interface layers.

  4. Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

    NASA Astrophysics Data System (ADS)

    Munira, Kamaram; Romero, Jonathon; Butler, William H.

    2014-05-01

    Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

  5. Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys.

    PubMed

    Oogane, M; Mizukami, S

    2011-08-13

    Some full-Heusler alloys, such as Co(2)MnSi and Co(2)MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co(2)MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co(2)FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

  6. First principle prediction of half-metallic ferromagnetism above room temperature in half-heusler alloys

    SciTech Connect

    Van An Dinh; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2010-01-04

    A first principle study of half-metallicity and ferromagnetism in half-heusler alloys NiMnZ (Z = Si, P, Ge, As, and Sb) is given. The half-metallicity and ferromagnetism are predicted via the calculation of electronic structure, and Curie temperature. The stability of the orthorhombic and tetragonal structures and C1{sub b} at various values of lattice parameters is also studied by means of the pseudo-potential method. All alloys exhibit the half-metallicity and ferromagnetism above room temperature.

  7. Half-metallicity and tetragonal distortion in semi-Heusler alloy FeCrSe

    SciTech Connect

    Huang, H. M. Luo, S. J.; Yao, K. L.

    2014-01-28

    Full-potential linearized augmented plane wave methods are carried out to investigate the electronic structures and magnetic properties in semi-Heusler alloy FeCrSe. Results show that FeCrSe is half-metallic ferromagnet with the half-metallic gap 0.31 eV at equilibrium lattice constant. Calculated total magnetic moment of 2.00μ{sub B} per formula unit follows the Slater-Pauling rule quite well. Two kinds of structural changes are used to investigate the sensitivity of half-metallicity. It is found that the half-metallicity can be retained when lattice constant is changed by −4.56% to 3.52%, and the results of tetragonal distortion indicate the half-metallicity can be kept at the range of c/a ratio from 0.85 to 1.20. The Curie temperature, cohesive energy, and heat of formations of FeCrSe are also discussed.

  8. Disorder dependent half-metallicity in Mn{sub 2}CoSi inverse Heusler alloy

    SciTech Connect

    Singh, Mukhtiyar; Saini, Hardev S.; Thakur, Jyoti; Reshak, Ali H.; Kashyap, Manish K.

    2013-12-15

    Heusler alloys based thin-films often exhibit a degree of atomic disorder which leads to the lowering of spin polarization in spintronic devices. We present ab-initio calculations of atomic disorder effects on spin polarization and half-metallicity of Mn{sub 2}CoSi inverse Heusler alloy. The five types of disorder in Mn{sub 2}CoSi have been proposed and investigated in detail. The A2{sub a}-type and B2-type disorders destroy the half-metallicity whereas it sustains for all disorders concentrations in DO{sub 3a}- and A2{sub b}-type disorder and for smallest disorder concentration studied in DO{sub 3b}-type disorder. Lower formation energy/atom for A2{sub b}-type disorder than other four disorders in Mn{sub 2}CoSi advocates the stability of this disorder. The total magnetic moment shows a strong dependence on the disorder and the change in chemical environment. The 100% spin polarization even in the presence of disorders explicitly supports that these disorders shall not hinder the use of Mn{sub 2}CoSi inverse Heusler alloy in device applications. - Graphical abstract: Minority-spin gap (E{sub g↓}) and HM gap (E{sub sf}) as a function of concentrations of various possible disorder in Mn{sub 2}CoSi inverse Heusler alloy. The squares with solid line (black color)/dotted line (blue color)/dashed line (red color) reperesents E{sub g↓} for DO{sub 3a}-/DO{sub 3b}-/A2{sub b}-type disorder in Mn{sub 2}CoSi and the spheres with solid line (black color)/dottedline (blue color)/dashed line (red color) represents E{sub sf} for DO{sub 3a}-/DO{sub 3b}-/A2{sub b}-type disorder in Mn{sub 2}CoSi. - Highlights: • The DO{sub 3}- and A2-type disorders do not affect the half-metallicity in Mn{sub 2}CoSi. • The B2-type disorder solely destroys half-metallicity in Mn{sub 2}CoSi. • The A2-type disorder most probable to occur out of all three types. • The total spin magnetic moment strongly depends on the disorder concentrations.

  9. Half-metallicity in Heusler-type Fe2Cr1-x Co x Si alloys

    NASA Astrophysics Data System (ADS)

    Ramudu, M.; Inamdar, Swaleha; Arout Chelvane, J.; Manivel Raja, M.; Kamat, S. V.

    2016-02-01

    The effects of the substitution of Cr with Co on microstructure, phase composition, structure, magnetic, and electrical properties in \\text{F}{{\\text{e}}2}\\text{C}{{\\text{r}}1-x}\\text{C}{{\\text{o}}x}\\text{Si} (0  ⩽  x  ⩽  1) alloys was investigated to identify the compositions with the potential to exhibit half-metallicity. The microstructural and structural studies revealed that only \\text{F}{{\\text{e}}2}\\text{C}{{\\text{r}}1-x}\\text{C}{{\\text{o}}x}\\text{Si} alloys with x  ⩾  0.5 exhibited the desired single phase L21 full Heusler alloy structure. Both the saturation magnetization (M s) and Curie temperature (T C) were found to increase with the increase in Co concentration. The experimentally measured M s values are in good agreement with the Slater-Pauling rule. The electrical resistivity measurements in the temperature range 10-300 K gives indirect evidence of half-metallic behaviour in these alloys at low temperatures. The temperature range in which the half-metallic behaviour was observed also increased with an increase in Co concentration.

  10. Evidence of half-metallic interface magnetism via local moment formation in Co based Heusler alloys

    SciTech Connect

    Telling, N. D.; Keatley, P.S.; van der Laan, G.; Hicken, R.J.; Arenholz, E.; Sakuraba, Y.; Oogane, M.; Ando, Y.; Miyazaki, T.

    2008-08-18

    In this work we use a combination of x-ray magnetic circular and linear dichroism (XMCD and XMLD) techniques to examine the formation of local moments in Heusler alloys of the composition Co{sub 2}MnX (where X=Si or Al). The existence of local moments in a half-metallic system is reliant upon the band gap in the minority-spin states. By utilizing the element-specific nature of x-ray techniques we are able to explore the origin of the minority-spin band gap in the partial density of states (PDOS), via the degree of localization of moments on Co and Mn atoms. We observe a crucial difference in the localization of the Co moment when comparing Co{sub 2}MnSi (CMS) and Co{sub 2}MnAl (CMA) films that is consistent with the predicted larger minority-spin gap in the Co PDOS for CMS. These results provide important evidence for the dominant role of the Co minority-spin states in realizing half-metallic ferromagnetism (HMF) in these Heusler alloys. They also demonstrate a direct method for measuring the degree of interfacial HMF in the raw materials without the need for fabricating spin-transport devices.

  11. Half-metallic properties of the new Ti2YPb(Y = Co, Fe) Heusler alloys

    NASA Astrophysics Data System (ADS)

    Hussain, Moaid K.; Gao, G. Y.; Yao, Kai-Lun

    2015-09-01

    The half-metallic properties of Ti2YPb(Y = Co, Fe) Heusler alloys with a CuHg2Ti-type structure were examined within the frame of the density functional theory and the Perdew-Burke-Ernzerh of generalized gradient approximation (GGA). Analysis of the electronic band structures and density of states for Ti2YPb(Y = Co, Fe) revealed that the spin-up bands are metallic, whereas the spin-down bands exhibit gaps of 0.73 and 0.70 eV, respectively. The magnetic moments calculated for the Ti2YPb(Y = Co, Fe) alloys were found to be equal to 3 μB/f.u. and 2 μB/f.u., values which both follows the Slater-Pauling rule of Mt = Zt - 18. The compounds’ negative enthalpy values should encourage their experimental realization in the future. The bandgap was elucidated to be mainly determined by the bonding and antibonding states created from the hybridizations of the d states between the Ti(1)-Ti(2) coupling and the Y = Co, Fe atom. The half-metallic properties of the Ti2YPb(Y = Co, Fe) compounds were found to be insensitive to lattice distortion, with full spin polarization achievable within a large range of lattice parameter values, making the alloys suitable for use in practical applications.

  12. Half-metallic Ni2MnSn Heusler alloy prepared by rapid quenching

    NASA Astrophysics Data System (ADS)

    Nazmunnahar, M.; Ryba, T.; del Val, J. J.; Ipatov, M.; González, J.; Hašková, V.; Szabó, P.; Samuely, P.; Kravcak, J.; Vargova, Z.; Varga, R.

    2015-07-01

    We have employed melt-spinning method to produce Ni2MnSn-based half-metallic Heusler alloy. It allows fast and simple production of large amount of materials in a single production step avoiding high temperature post-production annealing. Microstructural, magnetic and spin polarization study of Ni2MnSn ribbon is used for characterization. SEM analysis reveals the polycrystalline structure with the columnar crystals grown perpendicularly to the ribbon plane. A single-phase austenite with L21 structure was confirmed by X-ray. Magnetic measurements shows the ordinary ferromagnetic behavior with Curie temperature 344 K and magnetic moment 4.08 μB/f.u. Particular crystal structure leads to the well defined anisotropy having an easy plane in the ribbon's plane. Finally, the spin polarization parameter P0 estimated by Point-Contact Andreev-reflection Spectroscopy is varying in the range 40-70% for Ni2MnSn which is comparable with other values reported earlier for other Heusler alloys.

  13. Polarization reduction in half-metallic Heusler alloys: the effect of point defects and interfaces with semiconductors.

    PubMed

    Picozzi, Silvia; Freeman, Arthur J

    2007-08-01

    Half-metallic full-Heusler alloys represent a promising class of materials for spintronic applications. However, (i) intrinsic point defects in Heusler compounds can be detrimental with respect to their predicted 100% spin polarization at the Fermi level and (ii) when joined to mainstream semiconductors the presence of interface states-which destroys half-metallicity-can degrade their performance. Here, we present an overview of recent first-principles calculations performed to explore both these issues. In particular, we focus on ab initio FLAPW calculations performed for Co(2)MnGe and Co(2)MnSi in the presence of intrinsic defects (such as stoichiometric atomic swaps as well as non-stoichiometric antisites) and when interfaced with GaAs and Ge. Our findings show that Mn antisites, due to their low formation energies, can easily occur, in excellent consistency with experimental observations, and that they do not destroy half-metallicity. On the other hand, Co antisites, which also show a modest formation energy, give rise to defect states at the Fermi level. As for the [001]-ordered interfaces, we show that the strong hybridization in proximity to the junction gives rise to rather broad interface states that locally destroy half-metallicity. However, the bulk gaps (both in the minority spin channel for the Heusler alloy and for both spin channels in the semiconducting side) are fully recovered within a few layers away from the junction.

  14. Large half-metallic gap in ferromagnetic semi-Heusler alloys CoCrP and CoCrAs

    SciTech Connect

    Yao Zhongyu; Zhang, Y. S.; Yao, K. L.

    2012-08-06

    We investigate the electronic structure and magnetism of semi-Heusler alloys CoCrP and CoCrAs using the full-potential linearized augmented plane wave method. The calculations reveal that CoCrP and CoCrAs are half-metallic (HM) ferromagnets with the same magnetic moment of 2.00 {mu}{sub B} per formula unit. Both alloys have large half-metallic gaps (up to 0.50 eV) and wide band gaps (above 1 eV). The half-metallicity of CoCrP and CoCrAs can be retained even when their lattice constants are changed by -4.8% to 6.6% and -7.7% to 4.5%, respectively. The two alloys show great promise in the applications of spin valve and magnetic tunnel junction.

  15. First-principles studies of the Gilbert damping and exchange interactions for half-metallic Heuslers alloys

    NASA Astrophysics Data System (ADS)

    Chico, Jonathan; Keshavarz, Samara; Kvashnin, Yaroslav; Pereiro, Manuel; Di Marco, Igor; Etz, Corina; Eriksson, Olle; Bergman, Anders; Bergqvist, Lars

    2016-06-01

    Heusler alloys have been intensively studied due to the wide variety of properties that they exhibit. One of these properties is of particular interest for technological applications, i.e., the fact that some Heusler alloys are half-metallic. In the following, a systematic study of the magnetic properties of three different Heusler families Co2Mn Z ,Co2FeZ , and Mn2V Z with Z=(Al,Si,Ga,Ge) is performed. A key aspect is the determination of the Gilbert damping from first-principles calculations, with special focus on the role played by different approximations, the effect that substitutional disorder and temperature effects. Heisenberg exchange interactions and critical temperature for the alloys are also calculated as well as magnon dispersion relations for representative systems, the ferromagnetic Co2Fe Si and the ferrimagnetic Mn2V Al . Correlation effects beyond standard density-functional theory are treated using both the local spin density approximation including the Hubbard U and the local spin density approximation plus dynamical mean field theory approximation, which allows one to determine if dynamical self-energy corrections can remedy some of the inconsistencies which were previously reported for these alloys.

  16. The realization of ferro-ferrimagnetic transition and half-metallicity in half-Heusler CoMnGa alloy

    NASA Astrophysics Data System (ADS)

    Wang, L. Y.; Dai, X. F.; Wang, X. T.; Liu, X. F.; Li, P. P.; Cui, Y. T.; Liu, E. K.; Wang, W. H.; Wu, G. H.; Liu, G. D.

    2014-11-01

    We theoretically predicted that half-Heusler CoMnGa alloy to be half-metallic ferrimagnet at the equilibrium lattice parameter. With the lattice expansion, a local energy minimum occurs at a larger lattice parameter where CoMnGa alloy is in a metastable ferromagnetic state. However, a ferro-ferrimagnetic transition (Fo-Fi-T) is not observed in experiment. We found the Co-Mn antisites can induce the Fo-Fi-T by adjusting the driving force of magnetic transition and the energy barrier. The antisites are sensitive to the preparation methods and annealing temperatures. The highly ordered CoMnGa is achieved by annealing at 1073 K. The Fo-Fi-T occurs in a sample annealed at 1083 K.

  17. First principle study of a new half-metallic ferrimagnetic full-Heusler alloy Ti2VPb

    NASA Astrophysics Data System (ADS)

    Hamri, Bouabdallah; Hamri, Abdelkrim; Hamri, Aida; Hallouche, Abbes; Abbar, Boucif

    2016-04-01

    In this paper, we performed an ab initio calculation of the different properties of the full-Heusler alloy Ti2VPb which is reported for the first time using the WIEN2k implementation of the full potential linearized augmented plane wave (FPLAPW) scheme. In order to study this compound for magneto-electronic applications we used the generalized gradient approximation (GGA) approximation for its mechanical properties but the MBJ-GGA to better investigate the electronic properties. Our results show that the Ti2VPb compound exhibits half-metallicity at its equilibrium lattice 6.548 Å but a metallic character would occur with an expansion of its lattice parameters to 6.85 Å.

  18. Coherent tunnelling conductance in magnetic tunnel junctions of half-metallic full Heusler alloys with MgO barriers.

    PubMed

    Miura, Yoshio; Uchida, Hirohisa; Oba, Yoshihiro; Nagao, Kazutaka; Shirai, Masafumi

    2007-09-12

    We have carried out electronic structure and transport calculations for magnetic tunnel junctions (MTJ) composed of MgO and a half-metallic full Heusler alloy Co(2)MnSi on the basis of the density functional theory and the Landauer formula. We find that the density of states of Co atoms at the Co(2)MnSi/MgO(001) interface shifts toward the higher energy side due to the reduced symmetry, leading to a reduction of the spin polarization at the interface. Furthermore, we show that the majority-spin transmittance as a function of the in-plane wavevector [Formula: see text] has a broad peak centred at [Formula: see text] due to the tunnelling from the Δ(1) channel of Co(2)MnSi, while the transmittance from the Δ(5) channel is three orders of magnitude smaller than that of the Δ(1) channel. These results indicate that coherent tunnelling through the Δ(1) band is dominant also in an MTJ with Co(2)MnSi and an MgO barrier, like in Fe/MgO/Fe(001) MTJ and related systems.

  19. Half-metallicity at the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surface and its interface with GaAs(001).

    PubMed

    Zarei, Sareh; Javad Hashemifar, S; Akbarzadeh, Hadi; Hafari, Zohre

    2009-02-01

    Electronic and magnetic properties of the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surfaces and its interfaces with GaAs(001) are studied within the framework of density functional theory by using the plane-wave pseudopotential approach. The phase diagram obtained by ab initio atomistic thermodynamics shows that the CrAl surface is the most stable (001) termination of this Heusler alloy. We discuss that, at the ideal surfaces and interfaces with GaAs, half-metallicity of the alloy is lost, although the CrAl surface keeps high spin polarization. The energy band profile of the stable interface is investigated and a negative p Schottky barrier of -0.78 eV is obtained for this system.

  20. Enhanced half-metallicity of off-stoichiometric quaternary Heusler alloy C o2(Mn ,Fe )Si investigated through saturation magnetization and tunneling magnetoresistance

    NASA Astrophysics Data System (ADS)

    Moges, Kidist; Honda, Yusuke; Liu, Hong-xi; Uemura, Tetsuya; Yamamoto, Masafumi; Miura, Yoshio; Shirai, Masafumi

    2016-04-01

    We investigated the factors that critically affect the half-metallicity of the quaternary Heusler alloy C o2(Mn ,Fe )Si (CMFS) by examining the film composition dependence of the saturation magnetization per formula unit, μs, of CMFS thin films and the tunneling magnetoresistance (TMR) ratio of CMFS/MgO/CMFS magnetic tunnel junctions (MTJs). We also investigated the origin of the giant TMR ratio of up to 2610% at 4.2 K (429% at 290 K) obtained for CMFS MTJs with Mn-rich, lightly Fe-doped CMFS electrodes. Co antisites at the nominal Mn/Fe sites (C oMn /Fe antisites) can consistently explain the μs for (Mn + Fe)-deficient CMFS thin films being lower than the half-metallic Zt-24 value and the TMR ratio for MTJs with (Mn + Fe)-deficient CMFS electrodes being lower than that for MTJs with (Mn + Fe)-rich CMFS electrodes. It was revealed that the C oMn /Fe antisite is detrimental to the half-metallicity of the CMFS quaternary alloy, as it is in the Co2MnSi (CMS) ternary alloy. It was also shown that (Mn +Fe ) -rich compositions are critical to suppressing these harmful antisites and to retaining the half-metallic electronic state. In addition, a relatively small Fe ratio, rather than a large one, in the total (Mn +Fe ) composition led to a more complete half-metallic electronic state. Half-metallicity was more strongly enhanced by increasing the Mn composition in Mn-rich, lightly Fe-doped CMFS than in Mn-rich CMS. This phenomenon is the cause of the giant TMR ratio recently reported for CMFS MTJs. Our findings indicate that the approach to controlling off-stoichiometry and film composition is promising for fully utilizing the half-metallicity of quaternary CMFS thin films as spin source materials.

  1. On the half-metallicity of Co2FeSi Heusler alloy: Point-contact Andreev reflection spectroscopy and ab initio study

    NASA Astrophysics Data System (ADS)

    Makinistian, L.; Faiz, Muhammad M.; Panguluri, Raghava P.; Balke, B.; Wurmehl, S.; Felser, C.; Albanesi, E. A.; Petukhov, A. G.; Nadgorny, B.

    2013-06-01

    Co2FeSi, a Heusler alloy with the highest magnetic moment per unit cell and the highest Curie temperature, has largely been described theoretically as a half-metal. This conclusion, however, disagrees with point contact Andreev reflection (PCAR) spectroscopy measurements, which give much lower values of spin polarization, P. Here, we present the spin polarization measurements of Co2FeSi by the PCAR technique, along with a thorough computational exploration, within the DFT and a GGA+U approach, of the Coulomb exchange U parameters for Co and Fe atoms, taking into account spin-orbit coupling. We find that the orbital contribution (mo) to the total magnetic moment (mT) is significant, since it is at least 3 times greater than the experimental uncertainty of mT. The account of mo radically affects the acceptable values of U. Specifically, we find no values of U that would simultaneously satisfy the experimental values of the magnetic moment and result in the half-metallicity of Co2FeSi. On the other hand, the ranges of U that we report as acceptable are compatible with spin polarization measurements (ours and the ones found in the literature), which all are within approximately the 40-60 % range. Thus, based on reconciling experimental and computational results, we conclude that (a) spin-orbit coupling cannot be neglected in calculating Co2FeSi magnetic properties, and (b) Co2FeSi Heusler alloy is not half-metallic. We believe that our approach can be applied to other Heusler alloys such as Co2FeAl.

  2. Role of structural defects on the half-metallic character of Heusler alloys and their junctions with Ge and GaAs

    NASA Astrophysics Data System (ADS)

    Picozzi, Silvia; Continenza, Alessandra; Freeman, Arthur J.

    2003-03-01

    Heusler-alloys, such as Co_2MnGe and Co_2MnSi, have been predicted from first-principles calculations to be half-metallic and have recently attracted great attention for spin-injection purposes. However, spin polarizations of only 50%-60% were experimentally obtained for Heusler thin films(M.P.Raphael et al.), Phys. Rev. B 66, 104429 (2002); B.Ravel et al., Appl. Phys. Lett. 81, 2812 (2002) - a decrease attributed to defects in the Mn and Co sublattices. We performed ab-initio FLAPW(E.Wimmer, H.Krakauer, M.Weinert, A.J.Freeman, Phys. Rev. B 24, 864 (1981)) calculations in order to determine the effects of several types of defects (Co and Mn antisites, vacancies, etc.) on the electronic and magnetic properties of the bulk Heusler compounds and their interfaces with Ge and GaAs. We analyze the results in terms of spatial and energy behavior of the defect- and interface-induced states. Our findings show that Co-antisites have low formation energies and locally destroy half-metallicity; the defect states are spatially localized and are screened out in a couple of atomic shells.

  3. Micromagnetic study of high-power spin-torque oscillator with perpendicular magnetization in half-metallic Heusler alloy spin valve nanopillar under external magnetic fields

    NASA Astrophysics Data System (ADS)

    Huang, H. B.; Ma, X. Q.; Zhao, C. P.; Liu, Z. H.; Chen, L. Q.

    2015-01-01

    We investigated the high-power spin-torque oscillator in a half-metallic Heusler alloy Co2MnSi spin-valve nanopillars with perpendicular magnetization under external magnetic field using micromagnetic simulations. Our simulations show that the narrow optimum current of magnetization precession in the Heusler-based spin valve is broadened by introducing the surface anisotropy. The linear decrease of frequency with the out-of-plane magnetic field is obtained in our simulation. Additionally, the in-plane magnetic field dependence of frequency shows a parabolic curve which is explained by the magnetization trajectory tilting. Furthermore, we also discussed the decrease of output power using the excitation of non-uniform magnetization precession in the in-plane magnetic fields.

  4. Prediction of metallic and half-metallic structure and elastic properties of Fe2 Ti1-x Mnx Al Heusler alloys

    NASA Astrophysics Data System (ADS)

    Adebambo, P. O.; Adetunji, B. I.; Olowofela, J. A.; Oguntuase, J. A.; Adebayo, G. A.

    2016-03-01

    Detailed studies of structural and elastic properties of Fe2 Ti1-x Mnx Al Heusler alloys were carried out using density functional theory within the generalized gradient approximations. In each Heusler alloy, calculations of lattice constants were repeatedly done for successive increases in the lattice constants and the corresponding total energies were recorded. The graphs of the total energy as a function of lattice constant yielded parabolic curves. The present calculations revealed that among the doped alloys, Fe2 TiAl and Fe2 Ti0.75 Mn0.25 Al exhibit transitions of electrons from valence to conduction bands thereby making these alloys metallic. On the other hand, the ternary and quaternary alloys (Fe2 MnAl and Fe2 Ti0.25 Mn0.75 Al respectively) possess half-metallic behavior with direct band gaps of 0.56 eV and 0.41 eV respectively at the Γ-point in the minorities states. To determine the stability of these alloys, the three independent elastic constants in cubic structures (that included C11, C12, and C44 respectively) were obtained for all the compositions that confirmed their stabilities. The structural and elastic properties calculations confirmed the stabilities of Fe2 Ti0.25 Mn0.75 Al and Fe2 MnAl as some new half-metallic materials that can be applicable in spintronic devices. This work revealed the brittleness nature of Fe2 TiAl and Fe2 MnAl alloys.

  5. Tunable magnetism and half-metallicity in bulk and (1 0 0) surface of quaternary Co2MnGe1-xGax Heusler alloy

    NASA Astrophysics Data System (ADS)

    Wu, Bo; Yuan, Hongkuan; Kuang, Anlong; Feng, Yu; Chen, Hong

    2011-10-01

    The structural, magnetic and half-metallic properties of the bulk and (1 0 0) surface of quaternary Heusler alloy Co2MnGe1-xGax are investigated from the first-principles calculations. For the bulk, the lattice constant and total magnetic moment follow the Vegard law and Slater-Pauling rule well, respectively. Except for Co2MnGa, the Co2MnGe1-xGax series are half-metallic. Because the Fermi level of Co2MnGe0.5Ga0.5 is just located at the middle of the minority-spin gap, we predict that it bears the most robust half-metallicity as against remnant doped alloys. As for the Co2MnGe1-xGax(1 0 0) surface, the analyses on relaxed atomic positions and surface energies reveal that Co-Ge and Co-Ga bonding are more favourable than Co-Mn bonding and the terminations involving surface Mn atoms are more stable than CoCo terminations. By comparing with the bulk values, the surface Co and Mn magnetic moments are enhanced obviously. The calculated PDOS of all accessible 'ideal' surfaces show that the half-metallicity observed in bulk has been destroyed by the surface states, which is a possible reason why the tunnel magnetoresistence steeply drops as temperature increases. However, in the pure atomic terminations the surface properties can be slightly adjusted by the Ga-doped concentrations in bulk through the dipolar interaction. As a result, in the MnMn termination of Co2MnGe0.5Ga0.5(1 0 0) the spin polarization of 1 0 0% is detected, indicating that in the pure Mn atomic termination the half-metallicity of the (1 0 0) surface can remain if the corresponding bulk presents excellent half-metallic stability. Thus we predict that this thin film will present a higher potential for applications in ferromagnetic electrodes.

  6. Thermodynamic stability, magnetism and half-metallicity of Heusler alloy Co2MnX(X = Si, Ge, Sn)(1 0 0) surface

    NASA Astrophysics Data System (ADS)

    Wu, Bo; Yuan, Hongkuan; Kuang, Anlong; Chen, Hong; Feng, Yu

    2012-03-01

    The thermodynamic stability, magnetism and half-metallicity of Heusler alloy Co2MnX(X = Si, Ge, Sn)(1 0 0) surface are comprehensively investigated from the first-principles calculations. The calculated phase diagram indicates that with increasing core electrons of X atoms in Co2MnX(1 0 0) the CoCo termination will be faded out of the thermodynamic equilibrium region gradually. Due to the difference of Cosbnd X bonding the surface Co and Mn atoms prefer to move towards the slab and vacuum, respectively. By comparing with the bulk, the surface Co and Mn atomic magnetic moments (AMMs) are enhanced obviously because of the significant surface d-electronic localization. Further investigations of the partial density of states (PDOS) show that the half-metallicity observed in bulk has been destroyed by the surface states in deficient-Mn atomic terminated surface, only the terminations capped pure Mn atoms in Co2MnSi(1 0 0) and Co2MnGe(1 0 0) surfaces preserve spin-polarization of 100% instead of the Co2MnSn(1 0 0) surface, which is a possible explanation for low experimental tunnel magnetoresistance (TMR) value in Co2MnSn(1 0 0)-based magnetic tunnel junctions (TMJs).

  7. Investigation of atomic anti-site disorder and ferrimagnetic order in the half-metallic Heusler alloy Mn2VGa.

    PubMed

    Ramesh Kumar, K; Harish Kumar, N; Babu, P D; Venkatesh, S; Ramakrishnan, S

    2012-08-22

    The band structure calculation for the compound Mn(2)VGa carried out using the plane wave self-consistent field package with generalized gradient approximation shows that the compound is nearly half-metallic at the equilibrium lattice parameter. However, theoretical investigations have shown that a certain percentage of atomic anti-site disorder can destroy the half-metallic nature of the sample. Hence it is important to quantify the site disorder in these systems. We have deduced the percentage of atomic anti-site disorder from the refinement of the higher angle room temperature (300 K) neutron diffraction (ND) pattern and it was observed to be roughly 8% in our sample. The field variation of resistance recorded at different temperatures shows a positive slope at low temperatures and a negative slope at higher temperatures, indicating the half-metallic character at low temperatures. The ab initio calculations predict a ferrimagnetic ground state for this system. The analysis of the magnetic structure from ND data measured at 6 K yields magnetic moment values of 1.28 μ(B) and -0.7 μ(B) for Mn and V, respectively, confirming the ferrimagnetic ordering.

  8. Investigation of electronic structure, magnetic and transport properties of half-metallic Mn2CuSi and Mn2ZnSi Heusler alloys

    NASA Astrophysics Data System (ADS)

    Bhat, Idris Hamid; Yousuf, Saleem; Mohiuddin Bhat, Tahir; Gupta, Dinesh C.

    2015-12-01

    The electronic and magnetic properties of Mn2CuSi and Mn2ZnSi Heusler alloys have been investigated using full-potential linearized augmented plane wave method. The optimized equilibrium lattice parameters in stable F-43m configuration are found to be 5.75 Å for Mn2CuSi and 5.80 Å for Mn2ZnSi. Spin-resolved calculations show that the Mn atoms at inequivalent Wyckoff positions have different contributions to the total magnetic moment in the unit cell. The anti-parallel magnetic moments of inequivalent Mn atoms sum to an integer with total magnetic moment per unit cell. The 100% spin-polarization at Fermi energy together with the total magnetic moment of 1.0 μB for Mn2CuSi and 2.0 μB for Mn2ZnSi per unit cell, predict that the materials follow MT=ZT - 28 Slater-Pauling rule. Both the materials under study exhibit half-metallicity with an energy gap in the spin-down channels. In the study, we predict a rather fine value of Seebeck coefficient. Further, the decreasing electrical conductivity with temperature shows a metallic character in spin-up configurations, while the electrical conductivity of spin-down states follows a semiconductor-like trend.

  9. First-principles study on magnetism and half-metallicity in bulk and various (001) surfaces of Heusler alloy Zr2VSn with Hg2CuTi-type structure

    NASA Astrophysics Data System (ADS)

    Deng, Zun-Yi; Zhang, Jian-Min

    2016-07-01

    Structural, electronic and magnetic properties in the bulk and five different (001) surfaces (ZrV-, ZrSn-, VV-, ZrZr- and SnSn-terminations) of Zr2 VSn Heusler alloy with Hg2 CuTi -type structure are studied by using first-principles calculations based on density-functional theory. The bulk Zr2 VSn Heusler alloy is ferrimagnetic half-metallicity with equilibrium lattice constant 6.815 Å and total magnetic moment -1.000 μB / f.u . , following the Slater-Pauling rule μt =Zt - 18 . The atoms on different surface layers exhibit different displacements, electronic and magnetic properties. All five (001) surfaces lose the half-metallicity and are not usable in spintronics devices.

  10. High TC half-metallic fully-compensated ferrimagnetic Heusler compounds

    NASA Astrophysics Data System (ADS)

    Galanakis, I.; Şaşıoǧlu, E.

    2011-08-01

    Extensive ab-initio electronic structure calculations on Heusler alloys suggest that Cr2CoGa is the alloy of choice to achieve the half-metallic fully-compensated ferrimagnetism since (1) it has been already grown experimentally [T. Graf et al., Z. Anorg. Allg. Chem. 635, 976 (2009)], (2) half-metallic XA structure is favored energetically over all the studied lattice constant range with respect to the L21 which is not half-metallic, (3) the half-metallic gap is wide and the Fermi level falls at the middle of the gap and thus, it presents high degree of spin-polarization for a wide range of lattice constants, and (4) the Curie temperature is extremely high reaching the 1520 K.

  11. Theoretical investigations of half-metallic ferromagnetism in new Half-Heusler YCrSb and YMnSb alloys using first-principle calculations

    NASA Astrophysics Data System (ADS)

    Atif Sattar, M.; Rashid, Muhammad; Hashmi, M. Raza; Ahmad, S. A.; Imran, Muhammad; Hussain, Fayyaz

    2016-10-01

    Structural, electronic, and magnetic properties of new predicted half-Heusler YCrSb and YMnSb compounds within the ordered MgAgAs C1b-type structure are investigated by employing first-principal calculations based on density functional theory. Through the calculated total energies of three possible atomic placements, we find the most stable structures regarding YCrSb and YMnSb materials, where Y, Cr(Mn), and Sb atoms occupy the (0.5, 0.5, 0.5), (0.25, 0.25, 0.25), and (0, 0, 0) positions, respectively. Furthermore, structural properties are explored for the non-magnetic and ferromagnetic and anti-ferromagnetic states and it is found that both materials prefer ferromagnetic states. The electronic band structure shows that YCrSb has a direct band gap of 0.78 eV while YMnSb has an indirect band gap of 0.40 eV in the majority spin channel. Our findings show that YCrSb and YMnSb materials exhibit half-metallic characteristics at their optimized lattice constants of 6.67 Å and 6.56 Å, respectively. The half-metallicities associated with YCrSb and YMnSb are found to be robust under large in-plane strains which make them potential contenders for spintronic applications.

  12. Stability of ferromagnetism against doping in half-metallic alloys

    NASA Astrophysics Data System (ADS)

    Galanakis, I.; Şaşıoǧlu, E.

    2011-06-01

    We use a rigid band model to simulate doping in half-metallic NiMnSb and CoMnSb semi-Heusler alloys. Using first-principles calculations we calculate the intrasublattice exchange constants and the Curie temperature for these alloys as a function of the shift of the Fermi level and compare them also with the case of half-metallic CrAs and CrSe zinc-blende alloys. We show for all four compounds that the interactions between Cr-Cr(Mn-Mn) nearest neighbors are sufficient to explain the behavior of the Curie temperature. The interplay between the ferromagnetic RKKY-like and the antiferromagnetic superexchange interactions depends strongly on the details of the density of states around the minority-spin gap and thus it is found to be alloy-dependent.

  13. Probing the possibility of coexistence of martensite transition and half-metallicity in Ni and Co-based full-Heusler alloys: An ab initio calculation

    NASA Astrophysics Data System (ADS)

    Roy, Tufan; Pandey, Dhanshree; Chakrabarti, Aparna

    2016-05-01

    Using first-principles calculations based on density functional theory, we have studied the mechanical, electronic, and magnetic properties of Heusler alloys, namely, Ni2B C and Co2B C (B = Sc, Ti, V, Cr, and Mn as well as Y, Zr, Nb, Mo, and Tc; C = Ga and Sn). On the basis of electronic structure (density of states) and mechanical properties (tetragonal shear constant), as well as magnetic interactions (Heisenberg exchange coupling parameters), we probe the properties of these materials in detail. We calculate the formation energy of these alloys in the (face-centered) cubic austenite structure to probe the stability of all these materials. From the energetic point of view, we have studied the possibility of the electronically stable alloys having a tetragonal phase lower in energy compared to the respective cubic phase. A large number of the magnetic alloys is found to have the cubic phase as their ground state. On the other hand, for another class of alloys, the tetragonal phase has been found to have lower energy compared to the cubic phase. Further, we find that the values of tetragonal shear constant show a consistent trend: a high positive value for materials not prone to tetragonal transition and low or negative for others. In the literature, materials which have been seen to undergo the martensite transition are found to be metallic in nature. We probe here if there is any Heusler alloy which has a tendency to undergo a tetragonal transition and at the same time possesses a high spin polarization at the Fermi level. From our study, it is found that out of the four materials which exhibit a martensite phase as their ground state, three of these, namely, Ni2MnGa , Ni2MoGa , and Co2NbSn have a metallic nature; on the contrary, Co2MoGa exhibits a high spin polarization.

  14. The half-metallicity of LiMgPdSn-type quaternary Heusler alloys FeMnScZ (Z=Al, Ga, In): A first-principle study

    SciTech Connect

    Gao, Y. C.; Gao, X.

    2015-05-15

    Based on the first-principles calculations, quaternary Heusler alloys FeMnScZ (Z=Al, Ga, In) including its phase stability, band gap, the electronic structures and magnetic properties has been studied systematically. We have found that, in terms of the equilibrium lattice constants, FeMnScZ (Z=Al, Ga, In) are half-metallic ferrimagnets, which can sustain the high spin polarization under a very large amount of lattice distortions. The half-metallic band gap in FeMnScZ (Z=Al, Ga, In) alloys originates from the t{sub 1u}-t{sub 2g} splitting instead of the e{sub u}-t{sub 1u} splitting. The total magnetic moments are 3μB per unit cell for FeMnScZ (Z=Al, Ga, In) alloys following the Slater–Pauling rule with the total number of valence electrons minus 18 rather than 24. According to the study, the conclusion can be drawn that all of these compounds which have a negative formation energy are possible to be synthesized experimentally.

  15. EDITORIAL: New materials with high spin polarization: half-metallic Heusler compounds

    NASA Astrophysics Data System (ADS)

    Felser, Claudia; Hillebrands, Burkard

    2007-03-01

    resolution measurements of the valence band close to the Fermi energy indicate the existence of the gap in the minority states for all investigated Co2Fe1 - xMnxSi compounds. Other Co2 Heusler compounds are also possible candidates for magneto-electronic devices. Miura et al [21] have found that the disorder between Co and Y atoms correlates with the total valence electron charges around Y atom and have predicted that Ti-based compounds are better than Cr-, Mn- and Fe-based compounds in preventing the atomic disorder between Co and Y atoms. Kandpal et al have therefore investigated the electronic structure and disordering effects in Co2TiSn using local probes, 119Sn Mössbauer spectroscopy and 59Co nuclear magnetic resonance spectroscopy. They found that the sample possesses up to 10% of antisite (Co/Ti) disordering, a disorder that does not destroy the half-metallic character of this material. We hope that this Cluster of papers will help to stimulate and push forward the research of materials with high spin polarization. References [1] Sakuraba Y, Hattori M, Oogane M, Ando Y, Kato H, Sakuma A, Miyazaki T and Kubota H 2006 Giant tunneling magnetoresistance in Co2MnSi/Al-O/Co2MnSi magnetic tunnel junctions Appl. Phys. Lett. 88 192508 [2] S Wurmehl, Fecher G H, Kandpal H C, Ksenofontov V, Felser C, and Lin H-J 2006 Investigation of Co2FeSi: the Heusler compound with highest Curie temperature and magnetic moment Appl. Phys. Lett. 88 032503 [3] Tezuka N, Ikeda N, Sugimoto S and Inomata K 2006 175% TMR at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes Appl. Phys. Lett. 89 252508 [4] Block T, Felser C, Jakob G, Ensling J, Mühling B, Gütlich P, Cava R J 2003 Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al J. Solid State Chem. 176 646 [5] Marukame T, Ishikawa T, Matsuda K I, Uemura T and Yamamoto M 2006 High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al

  16. Surface half-metallicity of half-Heusler compound FeCrSe and interface half-metallicity of FeCrSe/GaP

    NASA Astrophysics Data System (ADS)

    Khalaf Al-zyadi, Jabbar M.; Jolan, Mudhahir H.; Yao, Kai-Lun

    2016-04-01

    Recent studies showed that half-Heusler FeCrSe exhibits half-metallic ferromagnetism (Huang et al. [20]). In this paper, we investigate extensively the electronic, magnetic, and half-metallic properties of the half-Heusler alloy FeCrSe (111) and (001) surfaces and the interface with GaP (111) substrate by using the first-principles calculations within the density functional theory. The atomic density of states demonstrates that the half-me tallicity verified in the bulk FeCrSe is maintained at the CrSe-terminated (001) and Se-terminated (111) surfaces, but lost at both Cr- and Fe-terminated (111) surfaces and the Fe-terminated (001) surface. Alternatively, for the interface of FeCrSe/GaP (111), the bulk half-metallicity is destroyed at Se-P configuration while Se-Ga interface and subinterface show nearly 100% spin polarization. Moreover, the calculated interfacial adhesion energies exhibit that Se-Ga shape is more stable than the Se-P one. The calculated magnetic moments of Se, Ga at the Se-Ga (111) interface and P at the Se-P (111) interface increase with respect to the corresponding bulk values while the atomic magnetic moment of Se atom at the Se-P (111) interface decreases. We also notice that the magnetic moments of subinterface Fe at both Se-Ga and Se-P (111) interfaces decrease compared to the bulk values.

  17. First-principles study on the ferrimagnetic half-metallic Mn2FeAs alloy

    NASA Astrophysics Data System (ADS)

    Qi, Santao; Zhang, Chuan-Hui; Chen, Bao; Shen, Jiang; Chen, Nanxian

    2015-05-01

    Mn-based full-Heusler alloys are kinds of promising candidates for new half-metallic materials. Basing on first principles, the electronic structures and magnetic properties of the Mn2FeAs full-Heusler alloy have been investigated in detail. The Hg2CuTi-type Mn2FeAs compound obeys the Slater-Pauling rule, while the anti-parallel alignment atomic magnetic moments of Mn locating at different sites indicate it a ferrimagnetic alloy. The calculated spin-down bands behave half-metallic character, exhibiting a direct gap of 0.46 eV with a 100% spin polarization at the Fermi level. More studies show the compound would maintain half-metallic nature in a large range of variational lattice constants. We expect that our calculated results may trigger Mn2FeAs applying in the future spintronics field.

  18. Study of Ru{sub 2}VGe and Ru{sub 2}VSb: High-spin polarized and half-metallic Heusler alloys

    SciTech Connect

    Bhat, Idris Hamid; Gupta, Dinesh C.

    2015-06-24

    Electronic and magnetic properties of Ru{sub 2}VGe and Ru{sub 2}VSb have been investigated by ab-initio. The optimized equilibrium lattice parameters were found to be 6.032 Å for Ru{sub 2}VGe and 6.272 Å for Ru{sub 2}VSb. Both the materials have ferromagnetic ground states and V mainly contributes to the magnetic properties in these materials. The highly spin-polarized half-metallic materials have integral magnetic moments of 1.0 µ{sub B} for Ru{sub 2}VGe and 2.0 µ{sub B} for Ru{sub 2}VSb with an energy gap of 0.095 eV for Ru2VGe and 0.186 eV for Ru{sub 2}VSb in the spin-down channel.

  19. First-principles study of spin-dependent thermoelectric properties of half-metallic Heusler thin films between platinum leads

    NASA Astrophysics Data System (ADS)

    Comtesse, Denis; Geisler, Benjamin; Entel, Peter; Kratzer, Peter; Szunyogh, László

    2014-03-01

    The electronic and magnetic bulk properties of half-metallic Heusler alloys such as Co2FeSi,Co2FeAl, Co2MnSi, and Co2MnAl are investigated by means of ab initio calculations in combination with Monte Carlo simulations. The electronic structure is analyzed using the plane-wave code quantum espresso and the magnetic exchange interactions are determined using the Korringa-Kohn-Rostoker (KKR) method. From the magnetic exchange interactions, the Curie temperature is obtained via Monte Carlo simulations. In addition, electronic transport properties of trilayer systems consisting of two semi-infinite platinum leads and a Heusler layer in-between are obtained from the fully relativistic screened KKR method by employing the Kubo-Greenwood formalism. The focus is on thermoelectric properties, namely, the Seebeck effect and its spin dependence. It turns out that already thin Heusler layers provide highly spin-polarized currents. This is attributed to the recovery of half-metallicity with increasing layer thickness. The absence of electronic states of spin-down electrons around the Fermi level suppresses the contribution of this spin channel to the total conductance, which strongly influences the thermoelectric properties and results in a spin polarization of thermoelectric currents.

  20. Direct observation of half-metallicity in the Heusler compound Co2MnSi.

    PubMed

    Jourdan, M; Minár, J; Braun, J; Kronenberg, A; Chadov, S; Balke, B; Gloskovskii, A; Kolbe, M; Elmers, H J; Schönhense, G; Ebert, H; Felser, C; Kläui, M

    2014-01-01

    Ferromagnetic thin films of Heusler compounds are highly relevant for spintronic applications owing to their predicted half-metallicity, that is, 100% spin polarization at the Fermi energy. However, experimental evidence for this property is scarce. Here we investigate epitaxial thin films of the compound Co2MnSi in situ by ultraviolet-photoemission spectroscopy, taking advantage of a novel multi-channel spin filter. By this surface sensitive method, an exceptionally large spin polarization of (93(-11)(+7)) % at room temperature is observed directly. As a more bulk sensitive method, additional ex situ spin-integrated high energy X-ray photoemission spectroscopy experiments are performed. All experimental results are compared with advanced band structure and photoemission calculations which include surface effects. Excellent agreement is obtained with calculations, which show a highly spin polarized bulk-like surface resonance ingrained in a half metallic bulk band structure.

  1. EDITORIAL: New materials with high spin polarization: half-metallic Heusler compounds

    NASA Astrophysics Data System (ADS)

    Felser, Claudia; Hillebrands, Burkard

    2007-03-01

    The development of magnetic Heusler compounds, specifically designed as materials for spintronic applications, has made tremendous progress in the very recent past [1-21]. Heusler compounds can be made as half-metals, showing a high spin polarization of the conduction electrons of up to 100% [1]. These materials are exceptionally well suited for applications in magnetic tunnel junctions acting, for example, as sensors for magnetic fields. The tunnelling magneto-resistance (TMR) effect is the relative change in the electrical resistance upon application of a small magnetic field. Tunnel junctions with a TMR effect of 580% at 4 K were reported by the group of Miyazaki and Ando [1], consisting of two Co2MnSi Heusler electrodes. High Curie temperatures were found in Co2 Heusler compounds with values up to 1120 K in Co2FeSi [2]. The latest results are for a TMR device made from the Co2FeAl0.5Si0.5 Heusler compound and working at room temperature with a TMR effect of 174% [3]. The first significant magneto-resistance effect was discovered in Co2Cr0.6Fe0.4Al (CCFA) in Mainz [4]. With the classical Heusler compound CCFA as one electrode, the record TMR effect at 4 K is 240% [5]. Positive and negative TMR values at room temperature utilizing magnetic tunnel junctions with one Heusler compound electrode render magnetic logic possible [6]. Research efforts exist, in particular, in Japan and in Germany. The status of research as of winter 2005 was compiled in a recent special volume of Journal of Physics D: Applied Physics [7-20]. Since then specific progress has been made on the issues of (i) new advanced Heusler materials, (ii) advanced characterization, and (iii) advanced devices using the new materials. In Germany, the Mainz and Kaiserslautern based Research Unit 559 `New Materials with High Spin Polarization', funded since 2004 by the Deutsche Forschungsgemeinschaft, is a basic science approach to Heusler compounds, and it addresses the first two topics in particular

  2. Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

    NASA Astrophysics Data System (ADS)

    Casper, Frederick; Felser, Claudia; Seshadri, Ram; Sebastian, C. Peter; Pöttgen, Rainer

    2008-02-01

    The XYZ half-Heusler crystal structure can conveniently be described as a tetrahedral zinc blende YZ structure which is stuffed by a slightly ionic X species. This description is well suited to understanding the electronic structure of semiconducting 8-electron compounds such as LiAlSi (formulated Li+[AlSi]-) or semiconducting 18-electron compounds such as TiCoSb (formulated Ti4+[CoSb]4-). The basis for this is that [AlSi]- (with the same electron count as Si2) and [CoSb]4- (the same electron count as GaSb) are both, structurally and electronically, zinc blende semiconductors. The electronic structure of half-metallic ferromagnets in this structure type can then be described as semiconductors with stuffing magnetic ions which have a local moment: for example, 22-electron MnNiSb can be written Mn3+[NiSb]3-. The tendency in the 18-electron compound for a semiconducting gap—believed to arise from strong covalency—is carried over in MnNiSb to a tendency for a gap in one-spin direction. Here we similarly propose the systematic examination of 18-electron hexagonal compounds for semiconducting gaps; these would be the 'stuffed wurtzite' analogues of the 'stuffed zinc blende' half-Heusler compounds. These semiconductors could then serve as the basis for possibly new families of half-metallic compounds, attained through appropriate replacement of non-magnetic ions by magnetic ones. These semiconductors and semimetals with tunable charge carrier concentrations could also be interesting in the context of magnetoresistive and thermoelectric materials.

  3. First-principles study on the ferrimagnetic half-metallic Mn{sub 2}FeAs alloy

    SciTech Connect

    Qi, Santao; Zhang, Chuan-Hui; Chen, Bao; Shen, Jiang; Chen, Nanxian

    2015-05-15

    Mn-based full-Heusler alloys are kinds of promising candidates for new half-metallic materials. Basing on first principles, the electronic structures and magnetic properties of the Mn{sub 2}FeAs full-Heusler alloy have been investigated in detail. The Hg{sub 2}CuTi-type Mn{sub 2}FeAs compound obeys the Slater-Pauling rule, while the anti-parallel alignment atomic magnetic moments of Mn locating at different sites indicate it a ferrimagnetic alloy. The calculated spin-down bands behave half-metallic character, exhibiting a direct gap of 0.46 eV with a 100% spin polarization at the Fermi level. More studies show the compound would maintain half-metallic nature in a large range of variational lattice constants. We expect that our calculated results may trigger Mn{sub 2}FeAs applying in the future spintronics field. - Graphical abstract: The d orbitals of Mn and Fe atoms split into multi-degenerated levels which create new bonding and nonbonding states. These exchange splitting shift the Fermi level to origin band gap.▪ - Highlights: • The electronic structure and magnetic properties of Mn{sub 2}FeAs full-Heusler alloy were studied. • A total magnetic moment of 3μ{sub B} was obtained for Mn{sub 2}FeAs alloy, following the SP rule M{sub t}=Z{sub t}−24. • The origin of ferrimagnetism and half-metallic character in Mn{sub 2}FeAs were discussed.

  4. Half-metallic ferromagnetism with unexpectedly small spin splitting in the Heusler compound Co2FeSi.

    PubMed

    Bombor, Dirk; Blum, Christian G F; Volkonskiy, Oleg; Rodan, Steven; Wurmehl, Sabine; Hess, Christian; Büchner, Bernd

    2013-02-01

    Half-metallic ferromagnetism stands for the technologically sought-after metallicity with 100% spin polarization. Electrical transport should, in principle, sensitively probe half-metallic ferromagnetism, since electron-magnon scattering processes are expected to be absent, with clear-cut consequences for the resistivity and the magnetoresistance. Here we present electrical transport data for single-crystalline Co(2)FeSi, a candidate half-metallic ferromagnet Heusler compound. The data reveal a textbooklike exponential suppression of the electron-magnon scattering rate with decreasing temperature which provides strong evidence that this material indeed possesses perfect spin polarization at low temperature. However, the energy scale for thermally activated spin-flip scattering is relatively low (activation gap Δ≈100 K) which has decisive influence on the magnetoresistance and the anomalous Hall effect, which exhibit strong qualitative changes when crossing T≈100 K.

  5. Investigating half-metallicity in PtXSb alloys (X=V, Mn, Cr, Co) at ambient and high pressure

    NASA Astrophysics Data System (ADS)

    Habbak, Enas L.; Shabara, Reham M.; Aly, Samy H.; Yehia, Sherif

    2016-08-01

    The structural, electronic, magnetic and elastic properties of half-Heusler alloys PtMnSb, PtVSb, PtCrSb and PtCoSb are investigated using first-principles calculation based on Density Functional Theory DFT. The Full Potential local Orbital (FPLO) method, within the General Gradient Approximation (GGA) and Local Spin Density Approximation (LSDA), have been used. The calculated structural, electronic and magnetic properties are in good agreement with available experimental and theoretical data. Using GGA approximation, only PtVSb shows a half-metallic behavior with a spin-down band gap and total magnetic moment of 0.802 eV and 2 μB respectively. Both of PtVSb and PtMnSb alloys are half-metallic with spin-down band gaps of 0.925 eV and 0.832 eV and magnetic moments of 2 μB and 4 μB respectively using LSDA approximation. The bulk modulus and its first pressure-derivative of these alloys are calculated using the modified Birch-Murnaghan equation of state (EOS). The effect of pressure on the lattice constant, energy gap and bulk modulus is investigated. Under pressure, PtMnSb and PtCrSb turn into half-metallic alloys at nearly 6 GPa and 27 GPa respectively using GGA approximation.

  6. Structural and Thermoelectric Properties of Ternary Full-Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Hayashi, K.; Eguchi, M.; Miyazaki, Y.

    2016-09-01

    The thermoelectric properties of ternary full-Heusler alloys, Co2 YZ, which are in a ferromagnetic state up to high temperature above 300 K, were measured and are discussed in terms of the crystal structure and electronic states. Among the full-Heusler alloys studied, the Co2MnSi sample exhibited the highest absolute value of Seebeck coefficient and also the highest electrical conductivity in the temperature range from 300 K to 1023 K. The highest power factor of 2.9 × 10-3 W/m-K2 was obtained for the Co2MnSi sample at 550 K, demonstrating the potential of half-metallic full-Heusler alloys as thermoelectric materials.

  7. Perpendicular Magnetic Anisotropy in Co-Based Full Heusler Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Xu, X. G.; Miao, J.; Jiang, Y.

    2015-12-01

    Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.

  8. The electronic and magnetic properties of quaternary Heusler alloy CoFeMnGe

    NASA Astrophysics Data System (ADS)

    Seema, K.

    2016-05-01

    We present study of quaternary Heusler alloy CoFeMnGe using density functional theory. The compound is half-metallic with half-metallic gap of 0.13 eV. The total magnetic moment of this compound is 3.96 μB which is in close agreement with Slater-Pauling rule. The effect of lattice compression and expansion shows the robustness of half-metallicity. A large value of half-metallic gap and 100% spin-polarization makes this material interesting for spin dependent applications.

  9. Half-metallic magnetism of Co 2CrX (X=As, Sb) Heusler compounds: An ab initio study

    NASA Astrophysics Data System (ADS)

    Kanbur, Ulvi; Gökoğlu, Gökhan

    2011-05-01

    In this study, we present the electronic, magnetic, and structural properties of two novel half-metallic full-Heusler compounds, Co 2CrAs and Co 2CrSb, in cubic L2 1 geometry. The calculations are based on the density functional theory within plane-wave pseudopotential method and spin-polarized generalized gradient approximation of the exchange-correlation functional. The electronic band structures and density of states of the systems indicate half-metallic behavior with vanishing electronic density of states of minority spins at Fermi level, which yields perfect spin polarization. The calculated magnetic moments of both systems in L2 1 structure are 5.00 μB, which are largely localized on the chromium site. The energy gaps in minority spin states are restricted by the 3d-states of cobalt atoms on two different sublattices. The formation enthalpies for both structures are negative indicating stability of these systems against decomposition into stable solid compounds.

  10. Effects of Ga substitution on the structural and magnetic properties of half metallic Fe{sub 2}MnSi Heusler compound

    SciTech Connect

    Pedro, S. S. Caraballo Vivas, R. J.; Andrade, V. M.; Cruz, C.; Paixão, L. S.; Contreras, C.; Costa-Soares, T.; Rocco, D. L.; Reis, M. S.; Caldeira, L.; Coelho, A. A.; Carvalho, A. Magnus G.

    2015-01-07

    The so-called half-metallic magnets have been proposed as good candidates for spintronic applications due to the feature of exhibiting a hundred percent spin polarization at the Fermi level. Such materials follow the Slater-Pauling rule, which relates the magnetic moment with the valence electrons in the system. In this paper, we study the bulk polycrystalline half-metallic Fe{sub 2}MnSi Heusler compound replacing Si by Ga to determine how the Ga addition changes the magnetic, the structural, and the half-metal properties of this compound. The material does not follow the Slater-Pauling rule, probably due to a minor structural disorder degree in the system, but a linear dependence on the magnetic transition temperature with the valence electron number points to the half-metallic behavior of this compound.

  11. Evidence of Fermi level control in a half-metallic Heusler compound Co2MnSi by Al-doping: Comparison of measurements with first-principles calculations

    NASA Astrophysics Data System (ADS)

    Sakuraba, Y.; Takanashi, K.; Kota, Y.; Kubota, T.; Oogane, M.; Sakuma, A.; Ando, Y.

    2010-04-01

    The Fermi level (EF) control of half-metallic Heusler alloy Co2MnSi by Al-doping was challenged in magnetic tunnel junctions with a Co2MnAlxSi1-x (CMAS) electrode. The observed bias voltage dependence on tunneling conductance ( G-V curves) clearly shows a shift in EF toward the center of the half-metallic gap with x , which showed excellent agreement with our first-principles calculations. However, the ratio of tunnel magnetoresistance (TMR) at 10 K to that at room temperature does not exhibit a remarkable change with x . The weak exchange energy at the CMAS interface may be the origin for the large temperature dependence of the TMR ratio.

  12. Ground state properties and thermoelectric behavior of Ru2VZ (Z=Si, ge, sn) half-metallic ferromagnetic full-Heusler compounds

    NASA Astrophysics Data System (ADS)

    Yalcin, Battal Gazi

    2016-06-01

    The ground state properties namely structural, mechanical, electronic and magnetic properties and thermoelectric behavior of Ru2VZ (Z=Si, Ge and Sn) half-metallic ferromagnetic full-Heusler compounds are systematically investigated. These compounds are ferromagnetic and crystallize in the Heusler type L21 structure (prototype: Cu2MnAl, Fm-3m 225). This result is confirmed for Ru2VSi and Ru2VSn by experimental work reported by Yin and Nash using high temperature direct reaction calorimetry. The studied materials are half-metallic ferromagnets with a narrow direct band gap in the minority spin channel that amounts to 31 meV, 66 meV and 14 meV for Ru2VSi, Ru2VGe, and Ru2VSn, respectively. The total spin magnetic moment (Mtot) of the considered compounds satisfies a Slater-Pauling type rule for localized magnetic moment systems (Mtot=(NV-24)μB), where NV=25 is the number of valence electrons in the primitive cell. The Curie temperature within the random phase approximation (RPA) is found to be 23 K, 126 K and 447 K for Ru2VSi, Ru2VGe and Ru2VSn, respectively. Semi-classical Boltzmann transport theories have been used to obtain thermoelectric constants, such as Seebeck coefficient (S), electrical (σ/τ) and thermal conductivity (κ/τ), power factor (PF) and the Pauli magnetic susceptibility (χ). ZTMAX values of 0.016 (350 K), 0.033 (380 K) and 0.063 (315 K) are achieved for Ru2VSi, Ru2VGe and Ru2VSn, respectively. It is expected that the obtained results might be a trigger in future experimentally interest in this type of full-Heusler compounds.

  13. Effect of disorder on electronic and magnetic properties of Co{sub 2}VGa Heusler alloy

    SciTech Connect

    Seema, K.; Kumar, Ranjan

    2015-08-28

    This paper presents the effect of disorder on electronic, magnetic and half-metallic properties of Co{sub 2}VGa Heusler alloy using density functional theory. Binary mixing is the most common form of atomic disorder in these compounds. We have considered three types of disorders: DO{sub 3}, A2 and B2 disorder which corresponds to X-Y, X-Z and Y-Z mixing respectively. After structural optimization, we found that A2 disorder has high formation energy and is most unlikely to occur. The half-metallic nature of the alloy is destroyed in presence of DO{sub 3} and A2 disorder. The destruction of half-metallicity is due to reconstruction of energy states. Also the loss of half-metallicity is accompanied by reversal of spin-polarization at the Fermi level. B2 disorder retains the half-metallic nature of the alloy but spin-polarization value is reduced as compared to the ordered alloy.

  14. Half-metallic ferromagnetism in full-Heusler compounds ACaX{sub 2} (A = K and Rb; X = N and O)

    SciTech Connect

    Umamaheswari, R. Vijayalakshmi, D. Yogeswari, M. Kalpana, G.

    2014-04-24

    Electronic structure and magnetic properties of hypothetical ACaX{sub 2} (A = K and Rb; X= N and O) compounds in full-Heusler phase have been investigated based on density functional theory (DFT) within the local density approximation (LDA). The electronic band structures and density of states of these compounds show that the spin-down electrons have metallic, and the spin-up electrons have a semi conducting gap resulting in stable half-metallic ferromagnetic behaviour. The strong spin polarization of 2p states of N and O atoms is found to be the origin of ferromagnetism which results in a total magnetic moment of 3{sub μB} and 1{sub μB} respectively.

  15. Fermi level tuning of highly spin-polarized complex Heusler alloys via materials genome

    NASA Astrophysics Data System (ADS)

    Pandey, Sudip; Quetz, Abdiel; Aryal, Anil; Fralaide, Michael; Samanta, Tapas; Munira, Kamran; Butler, William; Dubenko, Igor; Mazumdar, Dipanjan; Stadler, Shane; Ali, Naushad

    2015-03-01

    Heusler alloys are the largest family of half-metals (100% spin polarized at the Fermi level) and most promising for spintronic device applications. Many half-metallic full-Huesler alloys are predicted from ab-initio calculations, but may or may not be experimentally realizable. Here, we present a novel strategy to utilize these predicted materials to tune the Fermi level of well-known, highly spin-polarized Heusler alloys. We start with the test sample of [Co2MnSi]1-x[Co2CrGe]x, and, by controlling the ratio of these materials, we were able to shift the Fermi level of Co2MnSi. Experimentally, we study the structural and magnetic properties of such Heusler alloys by room temperature X-ray diffraction (XRD) and taking magnetization measurements; It was found that these complex combinations of materials are single phase even though some components (Co2CrGe for example) might not be stable in bulk form alone. This work was supported by the Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy (DOE Grant No. DE-FG02-06ER46291 and DE-FG02-13ER46946).

  16. Room-temperature half-metallicity in La(Mn,Zn)AsO alloy via element substitutions.

    PubMed

    Li, Xingxing; Wu, Xiaojun; Yang, Jinlong

    2014-04-16

    Exploring half-metallic materials with high Curie temperature, wide half-metallic gap, and large magnetic anisotropy energy is one of the effective solutions to develop high-performance spintronic devices. Using first-principles calculations, we design a practicable half-metal based on a layered La(Mn0.5Zn0.5)AsO alloy via element substitutions. At its ground state, the pristine La(Mn0.5Zn0.5)AsO alloy is an antiferromagnetic semiconductor. Either hole doping via (Ca(2+)/Sr(2+),La(3+)) substitutions or electron doping via (H(-)/F(-),O(2-)) substitutions in the [LaO](+) layer induce half-metallicity in the La(Mn0.5Zn0.5)AsO alloy. The half-metallic gap is as large as 0.74 eV. Monte Carlo simulations based on the Ising model predict a Curie temperature of 475 K for 25% Ca doping and 600 K for 50% H doping, respectively. Moreover, the quasi two-dimensional structure endows the doped La(Mn,Zn)AsO alloy a sizable magnetic anisotropy energy with the magnitude of at least one order larger than those of Fe, Co, and Ni bulks.

  17. Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

    NASA Astrophysics Data System (ADS)

    Bainsla, Lakhan; Suresh, K. G.

    2016-09-01

    Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (TC) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X2YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L21 structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX'YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A special class of HMF materials identified recently is known as spin gapless semiconductors (SGS). The difference in this case, compared with HMFs, is that the density of states for one spin band is just zero at the Fermi level, while the other has a gap as in the case of HMFs. Some of the reported SGS materials belong to EQHAs family. This review is dedicated to almost all reported materials belonging to EQHAs family. The electronic structure and hence the physical properties of Heusler alloys strongly depend on the degree of structural order and distribution of the atoms in the crystal lattice. A variety of experimental techniques has been used to probe the structural parameters and degree of order in these alloys. Their magnetic properties have been investigated using the conventional methods, while the spin polarization has been probed by point contact Andreev reflection technique. The experimentally obtained values of saturation magnetization are found to be in

  18. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750 K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 ± 0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300 K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  19. Fe{sub 2-x}Co{sub x}MnSi (x = 0, 1 and 2) Heusler alloys: Structural, magnetic and atomic site disorder properties

    SciTech Connect

    Bhatt, Harsh; Mukadam, M. D.; Meena, S. S.; Yusuf, S. M.

    2015-06-24

    The Heusler alloy series Fe{sub 2-x}Co{sub x}MnSi (x = 0, 1 and 2) is theoretically predicted to be half metallic. We prepared the sample series and determined the structural and magnetic properties to check if these materials are suitable for spintronics applications. The Curie temperatures of two of the alloys have been found to be well above the room temperature. But the presence of elements with atoms of similar size leads to atomic site disorder in these alloys, which may destroy the half metallic nature. The atomic site disorder has been confirmed by Mössbauer spectroscopy.

  20. Magnetic and anomalous electronic transport properties of the quaternary Heusler alloys Co2Ti1-xFexGe

    NASA Astrophysics Data System (ADS)

    Venkateswarlu, B.; Midhunlal, P. V.; Babu, P. D.; Kumar, N. Harish

    2016-06-01

    The half-metallic Heusler alloy Co2TiGe has a ferromagnetic ground state with a low magnetic moment (2 μB). It is free of atomic antisite disorder but has low Curie temperature (~390 K). In contrast the other cobalt based Heusler alloy Co2FeGe has high Curie temperature (~980 K) and high magnetic moment (5.6 μB) while exhibiting antisite disorder and lack of half-metallicity. Hence it is of interest to investigate the magnetic and transport properties of solid solutions of these two materials with contrasting characteristics. We report the structural, magnetic and electronic transport properties of quaternary Co2Ti1-x FexGe (x=0.2, 0.4, 0.6, 0.8) Heusler alloys. The alloys crystallize in L21 structure but with antisite disorder. The magnetization measurements revealed that the alloys were of soft ferromagnetic type with high Curie temperatures. Deviation from Slater-Pauling behavior and drastic change in electronic transport properties with some anomalous features were observed.The complex electronic transport properties have been explained using different scattering mechanisms.

  1. Application of the exact exchange potential method for half metallic intermediate band alloy semiconductor.

    PubMed

    Fernández, J J; Tablero, C; Wahnón, P

    2004-06-01

    In this paper we present an analysis of the convergence of the band structure properties, particularly the influence on the modification of the bandgap and bandwidth values in half metallic compounds by the use of the exact exchange formalism. This formalism for general solids has been implemented using a localized basis set of numerical functions to represent the exchange density. The implementation has been carried out using a code which uses a linear combination of confined numerical pseudoatomic functions to represent the Kohn-Sham orbitals. The application of this exact exchange scheme to a half-metallic semiconductor compound, in particular to Ga(4)P(3)Ti, a promising material in the field of high efficiency solar cells, confirms the existence of the isolated intermediate band in this compound. PMID:15268104

  2. Quantitative analysis of anisotropic magnetoresistance in Co{sub 2}MnZ and Co{sub 2}FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds

    SciTech Connect

    Sakuraba, Y. Hirayama, Y.; Furubayashi, T.; Sukegawa, H.; Li, S.; Takahashi, Y. K.; Hono, K.; Kokado, S.

    2014-04-28

    Anisotropic magnetoresistance (AMR) effect has been systematically investigated in various Heusler compounds Co{sub 2}MnZ and Co{sub 2}FeZ (Z = Al, Si, Ge, and Ga) epitaxial films and quantitatively summarized against the total valence electron number N{sub V}. It was found that the sign of AMR ratio is negative when N{sub V} is between 28.2 and 30.3, and turns positive when N{sub V} becomes below 28.2 and above 30.3, indicating that the Fermi level (E{sub F}) overlaps with the valence or conduction band edges of half-metallic gap at N{sub V} ∼ 28.2 or 30.3, respectively. We also find out that the magnitude of negative AMR ratio gradually increases with shifting of E{sub F} away from the gap edges, and there is a clear positive correlation between the magnitude of negative AMR ratio and magnetoresistive output of the giant magnetoresistive devices using the Heusler compounds. This indicates that AMR can be used as a facile way to optimize a composition of half-metallic Heusler compounds having a high spin-polarization at room temperature.

  3. Effect of atomic disorder on magnetization and half-metallic character of Cr2CoGa alloy

    NASA Astrophysics Data System (ADS)

    Deka, Bhargab; Modak, Rajkumar; Paul, Pralay; Srinivasan, A.

    2016-11-01

    Crystallographic, magnetic and transport properties of bulk Cr2CoGa alloy are reported in this work. The alloy exhibits inverse Heusler (or XA) structure. Analysis of XRD pattern reveals the presence of 10% Cr(B)-Ga disorder in the alloy. Lattice constant of the alloy was found to be 5.80 Å. The alloy exhibits ferrimagnetic behavior with Curie temperature (TC) of 320 K as obtained from the thermo-magnetic measurement and temperature dependent inverse susceptibility for the alloy. The saturation magnetization Ms for the alloy was found to be 0.26 μB/f.u. at 25 K against the value of 0 μB/f.u. predicted by Slater-Pauling rule. This deviation is attributed to the presence of Cr(B)-Ga disorder along with a small amount of Cr(B)-Co disorder in the alloy. The temperature dependent resistivity data shows a T2 dependency in low temperature region predicting that the charge carriers are not completely spin polarized at Fermi level due to the presence of sub-lattice disorder. Linear variation of resistivity above 100 K indicates the main contribution is from scattering of electrons by phonons. The effective anisotropy of the alloy was low (1.2×104 Jm-3 at 25 K) mainly due to its low Ms.

  4. Ab initio study of 59Co NMR spectra in Co2FeAl1-xSix Heusler alloys

    NASA Astrophysics Data System (ADS)

    Nishihara, H.; Sato, K.; Akai, H.; Takiguchi, C.; Geshi, M.; Kanomata, T.; Sakon, T.; Wada, T.

    2015-05-01

    Ab initio electronic structure calculation of a series of Co2FeAl1-xSix Heusler alloys has been performed, using the Korringa-Kohn-Rostoker-coherent potential approximation method to explain experimental 59Co NMR spectra. Two prominent features are explained semi-quantitatively-a global shift of the 59Co resonance line due to alloying with Al and Si atoms in Co2FeAl1-xSix, and the effect of local disorder in creating distinct satellite lines of 59Co NMR in Co2FeAl. The importance is stressed of the positive contribution to the 59Co hyperfine field from valence electron polarization, which emerges from the half-metallic band structure inherent in Co-based Heusler alloys.

  5. Half-metallicity and optoelectronic properties of V-doped zincblende ZnS and CdS alloys

    NASA Astrophysics Data System (ADS)

    El Amine Monir, Mohammed; Baltache, H.; Khenata, R.; Murtaza, G.; Ahmed, R.; Ahmed, Waleed. K.; Omran, S. Bin; Bouhemadou, A.

    2016-02-01

    In this paper, spin-polarized density functional calculations on the structural, electronic, optical and magnetic properties of the zincblende structure of the Zn1-xVxS and Cd1-xVxS alloys at x = 0.25 in the ferromagnetic (FM) ordering has been investigated. The study is accomplished using the full-potential (FP) linearized augmented plane wave plus local orbital (LAPW+lo) self-consistent scheme of calculations. To incorporate the exchange correlation component in the total energy calculations of the crystal, Perdew-Burke and Ernzerhof (PBE) parameterization for the generalized gradient approximation (GGA) and GGA+U are employed. Basically, for both alloys, to address their structural properties, we calculated their equilibrium lattice constants, bulk moduli as well as pressure derivatives. In general, from the analysis of the obtained electronic band structure of these alloys, the half-metallic nature of Zn0.75V0.25S and nearly half-metallic nature of the Cd0.75V0.25S alloy are demonstrated. The plotted density of states (DOS) curves project spin-exchange splitting energy Δx(d) and Δx(pd) as generated by V-3d states. It has been clearly evident that the effective potential results for the spin-down case are more striking than for the spin-up case. In order to describe the magnetic behavior of these alloys, the exchange constants N0α (valence band) and N0β (conduction band) as well as the magnetic moment values are estimated. The calculated results of the magnetic moment show that the main source in the reduction of the local magnetic moment of V in the alloys in comparison with its free value is a p-d orbital hybridization and partial transfer to nonmagnetic sites of (Zn, S) and (Cd, S) in Zn0.75V0.25S and Cd0.75V0.25S alloys. In addition, a study concerning optical properties, such as the refractive index, reflectivity and absorption coefficients is performed to determine their potential for optical and optoelectronic devices.

  6. First-principles study of the Gilbert damping constants of Heusler alloys based on the torque correlation model

    NASA Astrophysics Data System (ADS)

    Sakuma, Akimasa

    2015-04-01

    On the basis of the torque correlation model for the Gilbert damping constant α, we perform the first principles calculation for α for Co-based Heusler alloys, Co2MnAl (CMA), Co2MnSi (CMS), and Co2FeSi (CFS). In the ordered (L21) and partially disordered (B2) structures, the calculated values of α reflect half-metallicity or the gap structure around the Fermi level, EF, i.e. CMS with 100% spin-polarization has the smallest value. The valence electron number dependence of α follows the experimental trend. However, the calculated values are almost a factor of ten smaller than the measured ones. Although the α values are larger in the completely disordered (A2) structure, they are not as large as the experimental results. Therefore, the decreasing degree of order or the breakdown of the half-metallicity is not responsible for the discrepancy.

  7. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  8. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.

    PubMed

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M; Hirohata, Atsufumi; Lazarov, Vlado K

    2016-10-01

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  9. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

    NASA Astrophysics Data System (ADS)

    Nedelkoski, Zlatko; Kepaptsoglou, Demie; Ghasemi, Arsham; Kuerbanjiang, Balati; Hasnip, Philip J.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hirohata, Atsufumi; Lazarov, Vlado K.

    2016-10-01

    By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

  10. The band structure-matched and highly spin-polarized Co{sub 2}CrZ/Cu{sub 2}CrAl Heusler alloys interface

    SciTech Connect

    Ko, V.; Han, G.; Qiu, J.; Feng, Y. P.

    2009-11-16

    Here we present a lattice- and band-matched nonmagnetic L21 Heusler alloy spacer for Co{sub 2}CrZ Heusler alloys where Z=Si or Al. By first principle calculations, we find that the band structure matching is almost perfectly satisfied when they are interfaced with Cu{sub 2}CrAl. Despite the loss of half-metallicity due to interface states, our calculations show that the spin polarization at these band-matched (001) interfaces is higher than 80%. These lattice-matched Co{sub 2}CrZ/Cu{sub 2}CrAl interfaces with excellent band matching and enhanced spin scattering asymmetry are promising for all-metallic current-perpendicular-to-plane giant magnetoresistance device applications.

  11. Bulk and surface half-metallicity: The case of D03-type Mn3Ge

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Gao, G. Y.; Hu, Lei; Ni, Yun; Zu, Fengxia; Zhu, Sicong; Wang, Shuling; Yao, K. L.

    2014-01-01

    Motivated by the experimental realization of D022-type Mn3Ge (001) films [Kurt et al. Appl. Phys. Lett. 101, 132410 (2012)] and the structural stability of D03-type Heusler alloy Mn3Ge [Zhang et al. J. Phys.: Condens. Matter 25, 206006 (2013)], we use the first-principles calculations based on the full potential linearized augmented plane-wave method to investigate the electronic and magnetic properties of D03-type Heusler alloy Mn3Ge and its (001) surface. We show that bulk D03-Mn3Ge is a half-metallic ferromagnet with the minority-spin energy gap of 0.52 eV and the magnetic moment of 1.00 μB per formula unit. The bulk half-metallicity is preserved at the pure Mn-terminated (001) surface due to the large exchange split, but the MnGe-terminated (001) surface destroys the bulk half-metallicity. We also reveal that the surface stabilities are comparable between the D03-Mn3Ge (001) and the experimental D022-Mn3Ge (001), which indicates the feasibility to grow the Mn3Ge (001) films with D03 phase other than D022 one. The surface half-metallicity and stability make D03-Mn3Ge a promising candidate for spintronic applications.

  12. The electronic structure and spin polarization of Co2Mn0.75(Gd, Eu)0.25Z (Z=Si, Ge, Ga, Al) quaternary Heusler alloys

    NASA Astrophysics Data System (ADS)

    Berri, Saadi

    2016-03-01

    A first-principles approach is used to study the electronic and magnetic properties of Co2Mn0.75(Gd, Eu)0.25Z(Z=Si, Ge, Ga, Al) quaternary Heusler alloys. The investigation was done using the (FP-LAPW) method where the exchange-correlation potential was calculated with the frame of GGA-WC. At ambient conditions our calculated results of band structures reveal that for Co2Mn0.75(Gd, Eu)0.25Z(Z=Si, Ge) has a half-metallic (HM) band structure profile showing 100% spin polarization at the Fermi level. In contrast, Co2Mn0.75(Gd, Eu)0.25Z(Z=Ga, Al) alloys are found to be metallic. Finally, the half metallic compounds found in some structures of this series might be useful in spintronic devices.

  13. Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

    NASA Astrophysics Data System (ADS)

    Jin, Y.; Kharel, P.; Lukashev, P.; Valloppilly, S.; Staten, B.; Herran, J.; Tutic, I.; Mitrakumar, M.; Bhusal, B.; O'Connell, A.; Yang, K.; Huh, Y.; Skomski, R.; Sellmyer, D. J.

    2016-08-01

    The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L21 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (TC) significantly above room temperature. The measured TC for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μB/f.u. and 2.78 μB/f.u., respectively, which are close to the theoretically predicted value of 3 μB/f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.

  14. Fabrication of highly ordered Co2Fe0.4Mn0.6Si Heusler alloy films on Si substrates

    NASA Astrophysics Data System (ADS)

    Koike, Takeo; Oogane, Mikihiko; Ono, Atsuo; Ando, Yasuo

    2016-08-01

    The structural and magnetic properties of Si(100)/MgO/Co2Fe0.4Mn0.6Si (CFMS) Heusler alloy thin films were systematically investigated. Highly B2-ordered CFMS Heusler films with an ordering parameter of ca. 70-80% were obtained by both the insertion of a very thin Mg layer into the Si/MgO interfaces to prevent oxidation of the Si surface and the optimization of the annealing temperature for the CFMS films. The prepared CFMS films exhibited high magnetization close to that of the CFMS bulk. Such highly B2-ordered CFMS films are very useful for realizing high spin injection efficiency in Si because of the half-metallicity of the CFMS films.

  15. Point contact Andreev spectroscopy of epitaxial Co{sub 2}FeSi Heusler alloys on GaAs (001)

    SciTech Connect

    Lehmann, Hauke; Merkt, Ulrich; Meier, Guido; Scholtyssek, Jan M.; Herrmann, Claudia; Herfort, Jens

    2011-09-15

    The predicted half-metallicity of Co{sub 2}FeSi in combination with its high Curie temperature of above 980 K makes this Heusler alloy interesting for spinelectronics. Thin Co{sub 2}FeSi films are grown by molecular-beam epitaxy on GaAs (001) with a close lattice match. We present a study of point-contact measurements on different films, varying in thickness between 18 nm and 48 nm and in substrate temperature during deposition between 100 deg. C and 300 deg. C. Transport spin polarizations at the Fermi level are determined from differential conductance curves obtained by point-contact Andreev-reflection spectroscopy. A maximum transport spin polarization of about 60% is measured for a 18 nm thin Co{sub 2}FeSi film grown at 200 deg. C.

  16. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Liu, Hong-xi; Kawami, Takeshi; Moges, Kidist; Uemura, Tetsuya; Yamamoto, Masafumi; Shi, Fengyuan; Voyles, Paul M.

    2015-04-01

    The influence of off-stoichiometry on the half-metallic character of quaternary Heusler alloy thin films of Co2(Mn,Fe)Si (CMFS) was investigated by studying the composition dependence of the tunnelling magnetoresistance (TMR) ratio of fully epitaxial CMFS/MgO/CMFS magnetic tunnel junctions (CMFS MTJs) having Co2(Mnα‧Feβ‧)Si0.84 electrodes with various Mn and Fe compositions. It was found that with (Mn + Fe)-rich electrodes had higher TMR ratios than ones with (Mn + Fe)-deficient electrodes at 4.2 and 290 K. These results indicate that the suppression of Co antisites at nominal Mn/Fe sites is critical to obtaining half-metallic quaternary Co2(Mn,Fe)Si in a similar way as in ternary alloy Co2MnSi. CMFS MTJs with Mn-rich and lightly Fe-doped CMFS electrodes showed giant TMR ratios of 2610% at 4.2 K and 429% at 290 K. These results suggest that Co-based Heusler alloy thin films would be highly applicable to spintronic devices because of their half-metallicity and material diversity arising from not only ternary alloy but also quaternary alloy systems.

  17. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

    PubMed

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  18. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    PubMed Central

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

  19. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-12-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  20. Electronic structures and the spin polarization of Heusler alloy Co2FeAl surface

    NASA Astrophysics Data System (ADS)

    Xu, Xiaoguang; Wang, Yankai; Zhang, Delin; Jiang, Yong

    2011-01-01

    The electronic structures of the Heusler alloy Co2FeAl surface are studied theoretically via first-principles calculations. The space localization of the surface states is the key effect on the electronic structures of the Co2FeAl surface. At the surface, the lattice parameter shrinks to minimize the total energy, and the minority spin gap disappears and shows a metallic band gap character. However, with the depth increasing, the lattice parameter equals to that of bulk phase, and there shows an energy gap opening at the Fermi level in the minority spin states. As a result, the spin polarization at the surface is lower than that of the bulk Co2FeAl, while it is close to that of bulk phase beneath the surface. According to the calculations, it is clear that the half-metallic property fading of the Co2FeAl films is caused by the surface states. Therefore, it is important to minimize the lattice mismatch at the interface of Co2FeAl in order to obtain a high tunneling magnetoresistance.

  1. Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Dwivedi, Kshitij

    2015-07-01

    We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. For the material used in free layers, we use two different Cobalt-based Heusler alloys and compare their performance on the basis of switching speed, thermal stability and Tunnel magnetoresistance. We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability.

  2. Effect of substitution of Co with Fe on the structural, electronic and magnetic properties of Heusler alloy Co2CrAl

    NASA Astrophysics Data System (ADS)

    Nehra, Jagdish; Lakshmi, N.; Venugopalan, K.

    2015-02-01

    We investigate the effect of the substitution of Co with Fe on the structural, electronic and magnetic properties of a series of quaternary Co2-xFexCrAl Heusler alloys. The alloy orders in the B2 structure for composition of x≥0.4. The half metallicity in the parent Co2CrAl is retained in the whole series of alloys on partial substitution of Co with Fe atoms. DC magnetization studies evidence a linear increase in saturation magnetization and Curie temperature increase in Fe content. Mössbauer spectra show that along the series the average hyperfine field and combined relative area under the curve of sextets increase linearly with increase in Fe content corroborating results obtained from DC magnetization studies.

  3. Variation of magnetism and half-metallicity in Ru{sub 2}VSi with lattice expansion

    SciTech Connect

    Bhat, Idris Hamid; Gupta, Dinesh C.

    2015-06-24

    Full-potential linearized augmented plane wave method has been employed to investigate the electronic and magnetic properties of Ru{sub 2}VSi Heusler alloy at optimized lattice parameter and in expanded lattice. Present computations predict that Ru{sub 2}VSi has a ferromagnetic ground state with an optimized lattice constant 5.952 Å. The compound in ambient conditions was found to have metallic character. However, increased value of lattice parameter induces 100% spin-polarization in the material at Fermi energy. Further, the band gap tends to increase and the material behaves as pure half-metallic at an increased value of lattice constant.

  4. The defect-induced changes of the electronic and magnetic properties in the inverse Heusler alloy Ti{sub 2}CoAl

    SciTech Connect

    Chen, Ying; Wu, Bo; Yuan, Hongkuan; Feng, Yu; Chen, Hong

    2015-01-15

    The first-principles calculations are performed to investigate the effect of swap, antisite and vacancy defects of three classes on the electronic and magnetic properties in the inverse Heusler alloy Ti{sub 2}CoAl of half-metallicity. Our calculations reveal that Ti(A/B)–Co and Co–Al swaps, Ti(A/B) and Al vacancy defects as well as Co{sub Ti(A)/Al} and Al{sub Ti(A)/Ti(B)} antisite defects are likely to form in a concentration as high as 12.5%. Among them, Co{sub Ti(A)} antisite is detected to be the most probable defect. It is shown that the spin polarizations of Ti{sub 2}CoAl are considerably reduced by the Ti(A/B)–Co swap and Ti(B)/Al vacancy defects, while a quite high spin polarization around 95% is observed in Co–Al swap as well as Ti(A) vacancy. Remarkably, all the likely antisite defects almost retain the half-metallic character in a concentration of 12.5% even if they have the possibility to form. However, induced by antisites, the Fermi levels shift to the edge of band gap with small peaks arising just above the Fermi level, which may destroy the half-metallicity by spin-flip excitation. - Graphical abstract: The spin polarization and formation energy of various possible defects in inverse Heusler alloy Ti{sub 2}CoAl. The triangle, star and square represent the swap, antisite and vacancy defects, respectively. - Highlights: • The swap, antisite, and vacancy defects are studied in half-metallic Ti{sub 2}CoAl. • The Co{sub Ti(A)} antisite is the most probable among the studied defects. • The antisite defects almost retain the half-metallicity. • Most of swap and vacancy defects have degraded the half-metallicity. • High spin polarizations are detected in Co–Al swap and Ti(A) vacancy defects.

  5. Large anisotropic magnetoresistance of ruthenium-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Mizusaki, S.; Ohnishi, T.; Douzono, A.; Nagata, Y.; Ozawa, T. C.; Samata, H.; Noro, Y.

    2009-04-01

    Anomalous magnetic behavior was found in the polycrystalline Heusler alloy system Ru2Mn1-xFexGe. Samples of x =0 and 1.0 show no magnetoresistance (MR); however, the anisotropic MR effect is observed for x =0.5 (MR ratios of -4% and +2% are observed under parallel and perpendicular configurations of applied field and applied current, respectively). Moreover, magnetic measurement revealed that the sample of x =0 is antiferromagnetic, whereas the samples of x =0.5 and 1.0 are ferromagnetic with Curie temperatures of 270 and 490 K, respectively. The saturation magnetization and coercivity at 5 K are 3.1μB/f.u. and negligibly small for x =1.0 and 1.8μB/f.u. and 0.1 T for x =0.5, respectively. The MR effect is explained by a model in which antiferromagnetic and ferromagnetic domains coexist.

  6. Local formation of a Heusler structure in CoFe-Al alloys

    NASA Astrophysics Data System (ADS)

    Wurmehl, S.; Jacobs, P. J.; Kohlhepp, J. T.; Swagten, H. J. M.; Koopmans, B.; Maat, S.; Carey, M. J.; Childress, J. R.

    2011-01-01

    We systematically study the changes in the local atomic environments of Co in CoFe-Al alloys as a function of Al content by means of nuclear magnetic resonance. We find that a Co2FeAl Heusler type structure is formed on a local scale. The observed formation of a highly spin-polarized Heusler compound may explain the improved magnetotransport properties in CoFe-Al based current-perpendicular-to-the-plane spin-valves.

  7. PREFACE: Half Metallic Ferromagnets

    NASA Astrophysics Data System (ADS)

    Dowben, Peter

    2007-08-01

    Since its introduction by de Groot and colleagues in the early 1980s [1], the concept of half metallic ferromagnetism has attracted great interest. Idealized, half-metals have only one spin channel for conduction: the spin-polarized band structure exhibits metallic behavior for one spin channel, while the other spin band structure exhibits a gap at the Fermi level. Due to the gap for one spin direction, the density of states at the Fermi level has, theoretically, 100 & spin polarization. This gap in the density of states in one spin at the Fermi level, for example ↓ so N↓ (EF) = 0, also causes the resistance of that channel to go to infinity. At zero or low temperatures, the nonquasiparticle density of states (electron correlation effects), magnons and spin disorder reduce the polarization from the idealized 100 & polarization. At higher temperatures magnon-phonon coupling and irreversible compositional changes affect polarization further. Strategies for assessing and reducing the effects of finite temperatures on the polarization are now gaining attention. The controversies surrounding the polarization stability of half metallic ferromagnets are not, however, limited to the consideration of finite temperature effects alone. While many novel half metallic materials have been predicted, materials fabrication can be challenging. Defects, surface and interface segregation, and structural stability can lead to profound decreases in polarization, but can also suppress long period magnons. There is a 'delicate balance of energies required to obtain half metallic behaviour: to avoid spin flip scattering, tiny adjustments in atomic positions might occur so that a gap opens up in the other spin channel' [2]. When considering 'spintronics' devices, a common alibi for the study of half metallic systems, surfaces and interfaces become important. Free enthalpy differences between the surface and the bulk will lead to spin minority surface and interface states, as well as

  8. Half metallic ferromagnets.

    PubMed

    Dowben, Peter

    2007-08-01

    Since its introduction by de Groot and colleagues in the early 1980s [1], the concept of half metallic ferromagnetism has attracted great interest. Idealized, half-metals have only one spin channel for conduction: the spin-polarized band structure exhibits metallic behavior for one spin channel, while the other spin band structure exhibits a gap at the Fermi level. Due to the gap for one spin direction, the density of states at the Fermi level has, theoretically, 100 & spin polarization. This gap in the density of states in one spin at the Fermi level, for example ↓ so N(↓) (E(F)) = 0, also causes the resistance of that channel to go to infinity. At zero or low temperatures, the nonquasiparticle density of states (electron correlation effects), magnons and spin disorder reduce the polarization from the idealized 100 & polarization. At higher temperatures magnon-phonon coupling and irreversible compositional changes affect polarization further. Strategies for assessing and reducing the effects of finite temperatures on the polarization are now gaining attention. The controversies surrounding the polarization stability of half metallic ferromagnets are not, however, limited to the consideration of finite temperature effects alone. While many novel half metallic materials have been predicted, materials fabrication can be challenging. Defects, surface and interface segregation, and structural stability can lead to profound decreases in polarization, but can also suppress long period magnons. There is a 'delicate balance of energies required to obtain half metallic behaviour: to avoid spin flip scattering, tiny adjustments in atomic positions might occur so that a gap opens up in the other spin channel' [2]. When considering 'spintronics' devices, a common alibi for the study of half metallic systems, surfaces and interfaces become important. Free enthalpy differences between the surface and the bulk will lead to spin minority surface and interface states, as well

  9. The half-metallic ferromagnetism character in Be1-xVxY (Y=Se and Te) alloys: An ab-initio study

    NASA Astrophysics Data System (ADS)

    Sajjad, M.; Manzoor, Sadia; Zhang, H. X.; Noor, N. A.; Alay-e-Abbas, S. M.; Shaukat, A.; Khenata, R.

    2015-04-01

    Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p-d hybridization which yields small magnetic moments on the Be, Se and Te sites.

  10. Half-Heusler Alloys for Efficient Thermoelectric Power Conversion

    NASA Astrophysics Data System (ADS)

    Chen, Long; Zeng, Xiaoyu; Tritt, Terry M.; Poon, S. Joseph

    2016-07-01

    Half-Heusler (HH) phases (space group F43m, Clb) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability and environmental benignity as well as efficient power output. Until recently, the verifiable dimensionless figure of merit (ZT) of HH phases has remained moderate near 1, which limits the power conversion efficiency of these materials. We report herein ZT ˜ 1.3 in n-type (Hf,Zr)NiSn alloys near 850 K developed through elemental substitution and simultaneous embedment of nanoparticles in the HH matrix, obtained by annealing the samples close to their melting temperatures. Introduction of mass fluctuation and scattering centers play a key role in the high ZT measured, as shown by the reduction of thermal conductivity and increase of thermopower. Based on computation, the power conversion efficiency of a n-p couple module based on the new n-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recently reported high-ZT p-type HH phases is expected to reach 13%, comparable to that of state-of-the-art materials, but with the mentioned additional materials and environmental attributes. Since the high efficiency is obtained without tuning the microstructure of the HH phases, it leaves room for further optimization.

  11. Half-Heusler Alloys for Efficient Thermoelectric Power Conversion

    NASA Astrophysics Data System (ADS)

    Chen, Long; Zeng, Xiaoyu; Tritt, Terry M.; Poon, S. Joseph

    2016-11-01

    Half-Heusler (HH) phases (space group F43m, Clb) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability and environmental benignity as well as efficient power output. Until recently, the verifiable dimensionless figure of merit ( ZT) of HH phases has remained moderate near 1, which limits the power conversion efficiency of these materials. We report herein ZT ˜ 1.3 in n-type (Hf,Zr)NiSn alloys near 850 K developed through elemental substitution and simultaneous embedment of nanoparticles in the HH matrix, obtained by annealing the samples close to their melting temperatures. Introduction of mass fluctuation and scattering centers play a key role in the high ZT measured, as shown by the reduction of thermal conductivity and increase of thermopower. Based on computation, the power conversion efficiency of a n-p couple module based on the new n-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recently reported high- ZT p-type HH phases is expected to reach 13%, comparable to that of state-of-the-art materials, but with the mentioned additional materials and environmental attributes. Since the high efficiency is obtained without tuning the microstructure of the HH phases, it leaves room for further optimization.

  12. Emergence of spin spiral magnetic order in Mn based inverse Heusler alloys.

    PubMed

    Paul, S; Ghosh, S; Sanyal, B

    2014-05-14

    In this article we demonstrate, by first principles density functional calculations, the emergence of spin-spiral magnetic order in Mn₂NiX(X=Al,Ga,In,Sn) inverse Heusler alloys with the application of pressure. This noncollinearity originates from the features in the band structures and the nesting of fermi surfaces of collinear spin bands. The calculated interatomic magnetic exchange parameters suggest that the frustrations in the Mn sublattice with octahedral symmetry are responsible for the stabilization of a noncollinear state. We propose that the pressure induced stabilization of spin-spiral magnetic order is a general feature of magnetic alloys crystallizing in inverse Heusler structures.

  13. Magnetic Properties of MnFe2Ga Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Elgendy, Ahmed A.; Salehi-Fashami, Mohammad; Sellmyer, David; Hadjipanayis, George

    2015-03-01

    Recently, MnFe2Ga Heusler alloys have attracted significant attention due to their interesting physical properties such as large magnetic-field-induced strain, giant magnetocaloric effects,large magnetoresistance, and exchange bias behavior. These properties make them promising candidates for various practical applications in the field of smart materials, magnetic refrigeration and spintronics. In this work, we prepared MnFe2Ga alloys by melt-spinning and sputtering and studied the structural and magnetic properties. The melt-spun ribbons were prepared with a wheel speed of 30 m/s. The ribbons were annealed at different temperatures for 1 hour and grinded to make fine powders. The grinded powders were also used to make the target that is used in the cluster gun for the fabrication of MnFe2Ga nanoparticles. The structure of the as made, annealed ribbons, and powders displayed a face-centered-cubic structure. The microstructure of the as-made ribbons showed equiaxed grains with an average size of 3-5 μm while the annealed ribbons showed bigger grains with small particles covering homogeneously their surface. The magnetic properties show an enhancement of magnetization while coercivity remains the same with values M(3T) and HC of 85 emu/g and 150 Oe, respectively Transmission electron microscopy with elemental mapping is currently underway to determine the structure and composition of the surface nanoparticles. The work was supported by DOE-BES-DMSE (Grant No. DE-FG02-04ER4612).

  14. Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys

    DOE PAGESBeta

    Enamullah, .; Venkateswara, Y.; Gupta, Sachin; Varma, Manoj Raama; Singh, Prashant; Suresh, K. G.; Alam, Aftab

    2015-12-10

    In this study, we present a combined theoretical and experimental study of two quaternary Heusler alloys CoFeCrGe (CFCG) and CoMnCrAl (CMCA), promising candidates for spintronics applications. Magnetization measurement shows the saturation magnetization and transition temperature to be 3 μB, 866 K and 0.9 μB, 358 K for CFCG and CMCA respectively. The magnetization values agree fairly well with our theoretical results and also obey the Slater-Pauling rule, a prerequisite for half metallicity. A striking difference between the two systems is their structure; CFCG crystallizes in fully ordered Y-type structure while CMCA has L21 disordered structure. The antisite disorder adds amore » somewhat unique property to the second compound, which arises due to the probabilistic mutual exchange of Al positions with Cr/Mn and such an effect is possibly expected due to comparable electronegativities of Al and Cr/Mn. Ab initio simulation predicted a unique transition from half metallic ferromagnet to metallic antiferromagnet beyond a critical excess concentration of Al in the alloy.« less

  15. Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys

    SciTech Connect

    Enamullah, .; Venkateswara, Y.; Gupta, Sachin; Varma, Manoj Raama; Singh, Prashant; Suresh, K. G.; Alam, Aftab

    2015-12-10

    In this study, we present a combined theoretical and experimental study of two quaternary Heusler alloys CoFeCrGe (CFCG) and CoMnCrAl (CMCA), promising candidates for spintronics applications. Magnetization measurement shows the saturation magnetization and transition temperature to be 3 μB, 866 K and 0.9 μB, 358 K for CFCG and CMCA respectively. The magnetization values agree fairly well with our theoretical results and also obey the Slater-Pauling rule, a prerequisite for half metallicity. A striking difference between the two systems is their structure; CFCG crystallizes in fully ordered Y-type structure while CMCA has L21 disordered structure. The antisite disorder adds a somewhat unique property to the second compound, which arises due to the probabilistic mutual exchange of Al positions with Cr/Mn and such an effect is possibly expected due to comparable electronegativities of Al and Cr/Mn. Ab initio simulation predicted a unique transition from half metallic ferromagnet to metallic antiferromagnet beyond a critical excess concentration of Al in the alloy.

  16. Structural and magnetic properties of Co 2CrAl Heusler alloys prepared by mechanical alloying

    NASA Astrophysics Data System (ADS)

    Hakimi, M.; Kameli, P.; Salamati, H.

    2010-11-01

    Mechanical alloying has been used to produce nanocrystalline samples of Co 2CrAl Heusler alloys. The samples were characterized by using different methods. The results indicate that, it is possible to produce L2 1-Co 2CrAl powders after 15 h of ball-milling. The grain size of 15 h ball milled L2 1-Co 2CrAl Heusler phase, calculated by analyzing the XRD peak broadening using Williamson and Hall approach was 14 nm. The estimated magnetic moment per formula unit is ˜2 μ B. The obtained magnetic moment is significantly smaller than the theoretical value of 2.96 μ B for L2 1 structure. It seems that an atomic disorder from the crystalline L2 1-type ordered state and two-phase separation depresses the ferromagnetic ordering in alloy. Also, the effect of annealing on the structural and magnetic properties of ball milled powders was investigated. Two structures were identified for annealed sample, namely L2 1 and B2. The obtained value for magnetic moment of annealed sample is smaller than the as-milled sample due to the presence of disordered B2 phase and improvement of phase separation.

  17. Epitaxial growth of Heusler alloy Co{sub 2}MnSi/MgO heterostructures on Ge(001) substrates

    SciTech Connect

    Li Guifang; Taira, Tomoyuki; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, Masafumi

    2011-06-27

    We prepared Heusler alloy Co{sub 2}MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co{sub 2}MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co{sub 2}MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L2{sub 1} structure for the Co{sub 2}MnSi film. Furthermore, a sufficiently high saturation magnetization ({mu}{sub s}) value of 5.1 {mu}{sub B}/f.u. at 10 K, which is close to the theoretically predicted {mu}{sub s} of 5.0 {mu}{sub B}/f.u. for half-metallic Co{sub 2}MnSi, was obtained for prepared Co{sub 2}MnSi films.

  18. Temperature dependence of tunneling magnetoresistance in epitaxial magnetic tunnel junctions using a Co2FeAl Heusler alloy electrode

    NASA Astrophysics Data System (ADS)

    Wang, Wenhong; Sukegawa, Hiroaki; Inomata, Koichiro

    2010-09-01

    Spin-valve-type epitaxial magnetic tunnel junctions (MTJs) consisting of a full-Heusler alloy Co2FeAl (CFA) and a MgO tunnel barrier were fabricated on a single-crystal MgO(001) substrate using sputtering method for all the layers. Experimental temperature-dependent tunnel magnetoresistance in the MTJs was revealed to be fitted well using spin wave excitation model for tunneling spin polarization, P(T)=P0(1-αT3/2) up to room temperature, where P0 is the spin polarization at 0 K and α is a fitting parameter. The determined P and α are shown to be significantly different between bottom and top CFA electrodes facing a MgO barrier. It is demonstrated that the bottom CFA deposited on a Cr buffer has a low α and behaves as a half-metal with P˜1 in terms of the Δ1 symmetry due to the coherent tunneling through a MgO barrier.

  19. Half-metallicity in highly L21-ordered CoFeCrAl thin films

    NASA Astrophysics Data System (ADS)

    Jin, Y.; Kharel, P.; Valloppilly, S. R.; Li, X.-Z.; Kim, D. R.; Zhao, G. J.; Chen, T. Y.; Choudhary, R.; Kashyap, A.; Skomski, R.; Sellmyer, D. J.

    2016-10-01

    The structural, magnetic, and electron-transport properties of Heusler-ordered CoFeCrAl thin films are investigated experimentally and theoretically. The films, sputtered onto MgO and having thicknesses of about 100 nm, exhibit virtually perfect single-crystalline epitaxy and a high degree of L21 chemical order. X-ray diffraction and transmission-electron microscopy show that the structure of the films is essentially of the L21 Heusler type. The films are ferrimagnetic, with a Curie temperature of about 390 K, and a net moment of 2 μB per formula unit. The room temperature resistivity is 175 μΩ cm; the carrier concentration and mobility determined from the low temperature (5 K) measurement are 1.2 × 1018 cm-3 and 33 cm2/V s, respectively. In contrast to the well-investigated Heusler alloys such as Co2(Cr1-xFex)Al, the CoFeCrAl system exhibits two main types of weak residual A2 disorder, namely, Co-Cr disorder and Fe-Cr disorder, the latter conserving half-metallicity. Point-contact Andreev reflection yields a lower bound for the spin polarization, 68% at 1.85 K, but our structural and magnetization analyses suggest that the spin polarization at the Fermi level is probably higher than 90%. The high resistivity, spin polarization, and Curie temperature are encouraging in the context of spin electronics.

  20. Bulk and surface half-metallicity: The case of D0{sub 3}-type Mn{sub 3}Ge

    SciTech Connect

    Liu, Hao; Gao, G. Y. Hu, Lei; Ni, Yun; Zu, Fengxia; Zhu, Sicong; Wang, Shuling; Yao, K. L.

    2014-01-21

    Motivated by the experimental realization of D0{sub 22}-type Mn{sub 3}Ge (001) films [Kurt et al. Appl. Phys. Lett. 101, 132410 (2012)] and the structural stability of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge [Zhang et al. J. Phys.: Condens. Matter 25, 206006 (2013)], we use the first-principles calculations based on the full potential linearized augmented plane-wave method to investigate the electronic and magnetic properties of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge and its (001) surface. We show that bulk D0{sub 3}-Mn{sub 3}Ge is a half-metallic ferromagnet with the minority-spin energy gap of 0.52 eV and the magnetic moment of 1.00 μ{sub B} per formula unit. The bulk half-metallicity is preserved at the pure Mn-terminated (001) surface due to the large exchange split, but the MnGe-terminated (001) surface destroys the bulk half-metallicity. We also reveal that the surface stabilities are comparable between the D0{sub 3}-Mn{sub 3}Ge (001) and the experimental D0{sub 22}-Mn{sub 3}Ge (001), which indicates the feasibility to grow the Mn{sub 3}Ge (001) films with D0{sub 3} phase other than D0{sub 22} one. The surface half-metallicity and stability make D0{sub 3}-Mn{sub 3}Ge a promising candidate for spintronic applications.

  1. Engineering phase transitions in Heusler alloys: Towards better magnetic refrigerants

    NASA Astrophysics Data System (ADS)

    Shamberger, Patrick Jacob

    The central question investigated in this dissertation is whether, through appropriate materials design, a martensitic transformation (MT) can enhance the magnetocaloric effect (MCE) of a material and improve its performance as a magnetic refrigerant. Very large magnetocaloric effects have been demonstrated near first-order magneto-structural phase transitions where there is a large difference in magnetization between parent and daughter phases. Despite this potential, first-order phase transitions are typically associated with hysteresis losses and kinetic limitations that may detract from the performance of magnetic refrigerants. The role of these factors in material performance is generally underappreciated. Here, we evaluate different aspects of the overall performance of one model material system, Ni-Mn-Sn Heusler alloys. Our aim is to establish key limitations that may exist in this model system, and to identify potential approaches to reducing these limitations. This dissertation is divided into four principle sections: 1) Alloy Structure. Here, we report phase stability, lattice parameters, and atomic ordering across various sections in the Ni-Mn-Sn ternary. Furthermore, we calculate the Bain strain associated with the phase transformation, and observe no evidence for intermediate phases in the phase transformation. 2) MT Kinetics. Isothermal and constant cooling rate transformations behave consistently with a nucleation-limited MT. We demonstrate that nucleation is distributed over a range of temperatures due to compositional and elastic strain energy heterogeneities in the system. 3) MT Hysteresis. We quantify the hysteresis loss associated with the temperature- and magnetic field-induced MT, and demonstrate the limitations that hysteresis exerts on the extent of transformation (and thus, on the MCE). Furthermore, we consider the role of transformation strain on the hysteresis associated with the first-order phase transition. 4) Low field magnetic anomaly

  2. Specific features of the electrical resistivity of half-metallic ferromagnets Co2 MeAl ( Me = Ti, V, Cr, Mn, Fe)

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Perevozchikova, Yu. A.; Weber, H. W.; Marchenkov, V. V.

    2016-07-01

    The transport properties of half-metallic ferromagnetic Heusler alloys Co2 MeAl ( Me = Ti, V, Cr, Mn, Fe are transition 3 d metals) have been measured in the temperature range of 4-900 K. The specific features of the behavior of the resistivity have been considered in the framework of the two-current model of conductivity that takes into account the existence of the energy gap in the electronic spectra of the alloys near the Fermi level of one of electron subbands that differs in the spin direction.

  3. Specific features of the electrical resistivity of half-metallic ferromagnets Fe2MeAl (Me = Ti, V, Cr, Mn, Fe, Ni)

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Marchenkov, V. V.; Belozerova, K. A.; Weber, H. W.

    2014-03-01

    The transport properties of half-metallic ferromagnetic Heusler alloys Fe2MeAl (where Me = Ti, V, Cr, Mn, Fe, and Ni are 3 d transition elements) have been measured in the temperature range of 4-900 K. The specific features in the behavior of the electrical resistivity have been considered in terms of the two-current conduction model, which takes into account the presence of an energy gap in the electron spectrum of the alloys near the Fermi level.

  4. Spin Transfer Torque Switching and Perpendicular Magnetic Anisotropy in Full Heusler Alloy Co2FeAl-BASED Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Sukegawa, H.; Wen, Z. C.; Kasai, S.; Inomata, K.; Mitani, S.

    2014-12-01

    Some of Co-based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co-based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co2FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

  5. Martensite Transformation and Magnetic Properties of Ni-Fe-Ga Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Nath, Hrusikesh; Phanikumar, Gandham

    2015-11-01

    Compositional instability and phase formation in Ni-Fe-Ga Heusler alloys are investigated. The alloys are synthesized into two-phase microstructure. Their structures are identified as fcc and L 21, respectively. The γ-phase formation could be suppressed with higher Ga-content in the alloy as Ga stabilizes austenite phase, but Ga lowers the martensite transformation temperature. The increase of Fe content improves the magnetization value and the increase of Ni from 52 to 55 at. pct raises the martensite transformation temperature from 216 K to 357 K (-57 °C to 84 °C). Magnetic properties and martensitic transformation behavior in Ni-Fe-Ga Heusler alloys follow opposite trends, while Ni replaces either Fe or Ga, whereas they follow similar trends, while Fe replaces Ga. Modulated martensite structure has low twinning stress and high magneto crystalline anisotropic properties. Thus, the observation of 10- and 14 M-modulated martensite structures in the studied Ni-Fe-Ga Heusler alloys is beneficial for shape memory applications. The interdependency of alloy composition, phase formation, magnetic properties, and martensite transformation are discussed.

  6. A comparison of surface segregation for two semi-Heusler alloys: TiCoSb and NiMnSb

    NASA Astrophysics Data System (ADS)

    Caruso, A. N.; Borca, C. N.; Ristoiu, D.; Nozières, J. P.; Dowben, P. A.

    2003-02-01

    Very different types of surface segregation are found for very similar Heusler alloy materials. We observed significant manganese and antimony segregation to the surfaces and near surface regions of the semi-Heusler alloys NiMnSb and TiCoSb respectively. The Mn and Sb surface enrichment was characterized by angle resolved core level photoemission. Indications of surface disorder from low energy electron diffraction provide complimentary evidence of segregation.

  7. Ab initio ground state and L{sub 2,3} x-ray magnetic circular dichroism of Mn-based Heusler alloys

    SciTech Connect

    Galanakis, I.; Ostanin, S.; Alouani, M.; Dreysse, H.; Wills, J. M.

    2000-02-01

    Relativistic full-potential calculations within the generalized gradient approximation (GGA) for a series of Mn-based Heusler alloys are presented. Calculated equilibrium lattice parameters deviate less than 1.2% from the experimental values. The main features of a half metallic system are present in the density of states for the PtMnSb and NiMnSb. We predict that PdMnSb shows half metallic character under hydrostatic pressure. The substitution of Sb in PtMnSb by Sn or Te destroys the minority spin band gap. Spin and orbital magnetic moments for all the systems are in good agreement with previous calculations and experimental data. L{sub 2,3} x-ray absorption and x-ray magnetic circular dichroism (XMCD) spectra are calculated for all the five compounds. Pt spectra present big deviations from system to system in the PtMnY (Y=Sn,Sb,Te) compounds while Mn spectra show only small deviations. For all these spectra GGA underestimates the L{sub 3}/L{sub 2} integrated branching ratio and produces a much smaller L{sub 2} peak intensity for the Ni site in NiMnSb. The XMCD sum rules are used to compute the spin and orbital magnetic moments and the results are compared to the direct calculations. (c) 2000 The American Physical Society.

  8. Tetragonal Heusler-Like Mn-Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Ma, Qinli; Sugihara, Atsushi; Suzuki, Kazuya; Zhang, Xianmin; Miyazaki, Terunobu; Mizukami, Shigemi

    2014-10-01

    Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

  9. Half-metallic ferromagnets: From band structure to many-body effects

    NASA Astrophysics Data System (ADS)

    Katsnelson, M. I.; Irkhin, V. Yu.; Chioncel, L.; Lichtenstein, A. I.; de Groot, R. A.

    2008-04-01

    A review of new developments in theoretical and experimental electronic-structure investigations of half-metallic ferromagnets (HMFs) is presented. Being semiconductors for one spin projection and metals for another, these substances are promising magnetic materials for applications in spintronics (i.e., spin-dependent electronics). Classification of HMFs by the peculiarities of their electronic structure and chemical bonding is discussed. The effects of electron-magnon interaction in HMFs and their manifestations in magnetic, spectral, thermodynamic, and transport properties are considered. Special attention is paid to the appearance of nonquasiparticle states in the energy gap, which provide an instructive example of essentially many-body features in the electronic structure. State-of-the-art electronic calculations for correlated d -systems are discussed, and results for specific HMFs (Heusler alloys, zinc-blende structure compounds, CrO2 , and Fe3O4 ) are reviewed.

  10. Phase separation and antisite defects in the thermoelectric TiNiSn half-Heusler alloys

    SciTech Connect

    Kirievsky, K.; Gelbstein, Y. Fuks, D.

    2013-07-15

    The half-Heusler TiNiSn alloys have recently gained an attention as promising candidates for thermoelectric applications. Improvement of these alloys for such applications can be obtained by both electronic and compositional optimizations. The latter can result in a miscibility gap, allowing a phase separation in the nano-scale and consequently a thermal conductivity reduction. Combination of ab initio calculations and statistical thermodynamics was applied for studying the relative stability of a number of superstructures in TiNiSn based alloys. The quasi-binary phase diagram beyond T=0 K for TiNiSn–TiNi{sub 2}Sn solid solutions was calculated using energy parameters extracted from the total energy calculations for ordered structures in the Ni sublattice. We demonstrated that a decomposition of the off-stoichiometric Ni-rich half-Heusler alloy into the stoichiometric TiNiSn phase and into Ni deficient Heusler TiNi{sub 2}Sn phase occurs at elevated temperatures—an effect which recently had been observed experimentally. Furthermore, favorable energetic conditions for antisite defects formation were deduced, based on calculations of the energy of formation, an effect which was explained as a cooperative process of partial disordering on the Ni sublattice. The influence of these two effects on improvement of the thermoelectric performance of TiNiSn based half Heusler compounds is discussed. - Graphical abstract: Phase separation and antisite defects in the thermoelectric TiNiSn alloy, are covered as methods for nanostructuring and thereby enhancement of the thermoelectric potential. - Highlights: • Ab initio calculations/statistical thermodynamics was applied for studying the TiNiSn system. • The phase diagram for TiNiSn–TiNi{sub 2}Sn solid solutions was calculated. • Decomposition of the Ni-rich HH into TiNiSn and Ni deficient TiNi{sub 2}Sn phases was observed. • Favorable energetic conditions for antisite defects formation were deduced.

  11. Lateral spin valves with two-different Heusler-alloy electrodes on the same platform

    SciTech Connect

    Oki, S.; Yamada, S.; Tanikawa, K.; Yamasaki, K.; Miyao, M.; Hamaya, K.

    2013-11-18

    Using room-temperature molecular beam epitaxy on Si(111), we demonstrate Heusler-alloy bilayers consisting of L2{sub 1}-Co{sub 2}FeSi (CFS) and D0{sub 3}-Fe{sub 3}Si (FS). By fabricating lateral spin valves with L2{sub 1}-CFS and D0{sub 3}-FS electrodes, we can see ideal spin signals even though we use one L2{sub 1}-CFS as a spin injector and another D0{sub 3}-FS as a spin detector. The difference in the spin absorption between L2{sub 1}-CFS and D0{sub 3}-FS can also be examined, and we find that the spin resistance of D0{sub 3}-FS is larger than that of L2{sub 1}-CFS. This work will be useful for understanding spin transport in lateral spin-valve devices with different Heusler-alloy electrodes.

  12. Magnetocaloric effect and its relation to shape-memory properties in ferromagnetic Heusler alloys.

    PubMed

    Planes, Antoni; Mañosa, Lluís; Acet, Mehmet

    2009-06-10

    Magnetic Heusler alloys which undergo a martensitic transition display interesting functional properties. In the present review, we survey the magnetocaloric effects of Ni-Mn-based Heusler alloys and discuss their relation with the magnetic shape-memory and magnetic superelasticity reported in these materials. We show that all these effects are a consequence of a strong coupling between structure and magnetism which enables a magnetic field to rearrange martensitic variants as well as to provide the possibility to induce the martensitic transition. These two features are respectively controlled by the magnetic anisotropy of the martensitic phase and by the difference in magnetic moments between the structural phases. The relevance of each of these contributions to the magnetocaloric properties is analysed.

  13. Premartensite transition in Ni{sub 2}FeGa Heusler alloy

    SciTech Connect

    Nath, Hrusikesh; Phanikumar, G.

    2015-04-15

    Martensitic phase transformation of Ni{sub 2}FeGa Heusler alloy was studied by differential scanning calorimetry. Atomic ordering induced in the austenite structure by quenching from high temperature plays a significant role on martensitic phase transformation. Higher magnetization and larger magneto-crystalline anisotropy of martensite phase than that of austenite phase are noticed. Tweed contrast regions observed in the transmission electron microscopy were correlated to premartensite phenomena. A shift in premartensitic transition temperature prior to martensitic transformation as measured by differential scanning calorimetry is being reported for the first time in this system. - Highlights: • Atomic ordering influences martensitic transformation in Ni{sub 2}FeGa Heusler alloy. • Observation of tweed contrast in TEM was correlated to premartensite phenomena. • For the first time the shift in premartensite peak was observed in DSC.

  14. Investigations of the electronic and magnetic structures of Co{sub 2}YGa (Y=Cr, Mn) Heusler alloys and their (100) surfaces

    SciTech Connect

    Hamad, Bothina

    2014-03-21

    Density functional theory calculations are performed to investigate the structural, electronic, and magnetic properties of bulk structures of Co{sub 2}YGa (Y = Cr, Mn) Heusler alloys and the surfaces along the (100) orientation. The bulk structures of both alloys show a ferromagnetic behavior with total magnetic moments of 3.03μ{sub B} and 4.09μ{sub B} and high spin polarizations of 99% and 67% for Co{sub 2}CrGa and Co{sub 2}MnGa, respectively. The surfaces are found to exhibit corrugations due to different relaxations of the surface atoms. For the case of Co{sub 2}CrGa, two surfaces preserve the half metallicity, namely those with Cr-Ga and Ga– terminations with high spin polarizations above 90%, whereas it dropped to about 50% for the other surfaces. However, the spin polarizations of Co-Co and Mn-Ga terminated surfaces remain close to that of bulk Co{sub 2}MnGa alloy, whereas it is suppressed down to 17% for Co– termination. The highest local magnetic moments are found to be 3.26 μ{sub B} and 4.11 μ{sub B} for Cr and Mn surface atoms in Cr-Ga and Mn– terminated surfaces, respectively.

  15. The intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials.

    PubMed

    Xie, Hanhui; Wang, Heng; Fu, Chenguang; Liu, Yintu; Snyder, G Jeffrey; Zhao, Xinbing; Zhu, Tiejun

    2014-01-01

    The intrinsic structural disorder dramatically affects the thermal and electronic transport in semiconductors. Although normally considered an ordered compound, the half-Heusler ZrNiSn displays many transport characteristics of a disordered alloy. Similar to the (Zr,Hf)NiSn based solid solutions, the unsubstituted ZrNiSn compound also exhibits charge transport dominated by alloy scattering, as demonstrated in this work. The unexpected charge transport, even in ZrNiSn which is normally considered fully ordered, can be explained by the Ni partially filling interstitial sites in this half-Heusler system. The influence of the disordering and defects in crystal structure on the electron transport process has also been quantitatively analyzed in ZrNiSn1-xSbx with carrier concentration nH ranging from 5.0 × 10(19) to 2.3 × 10(21) cm(-3) by changing Sb dopant content. The optimized carrier concentration nH ≈ 3-4 × 10(20) cm(-2) results in ZT ≈ 0.8 at 875K. This work suggests that MNiSn (M = Hf, Zr, Ti) and perhaps most other half-Heusler thermoelectric materials should be considered highly disordered especially when trying to understand the electronic and phonon structure and transport features.

  16. The intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials

    PubMed Central

    Xie, Hanhui; Wang, Heng; Fu, Chenguang; Liu, Yintu; Snyder, G. Jeffrey; Zhao, Xinbing; Zhu, Tiejun

    2014-01-01

    The intrinsic structural disorder dramatically affects the thermal and electronic transport in semiconductors. Although normally considered an ordered compound, the half-Heusler ZrNiSn displays many transport characteristics of a disordered alloy. Similar to the (Zr,Hf)NiSn based solid solutions, the unsubstituted ZrNiSn compound also exhibits charge transport dominated by alloy scattering, as demonstrated in this work. The unexpected charge transport, even in ZrNiSn which is normally considered fully ordered, can be explained by the Ni partially filling interstitial sites in this half-Heusler system. The influence of the disordering and defects in crystal structure on the electron transport process has also been quantitatively analyzed in ZrNiSn1-xSbx with carrier concentration nH ranging from 5.0×1019 to 2.3×1021 cm−3 by changing Sb dopant content. The optimized carrier concentration nH ≈ 3–4×1020 cm−2 results in ZT ≈ 0.8 at 875K. This work suggests that MNiSn (M = Hf, Zr, Ti) and perhaps most other half-Heusler thermoelectric materials should be considered highly disordered especially when trying to understand the electronic and phonon structure and transport features. PMID:25363573

  17. Electronic, magnetic and thermal properties of Co2CrxFe1-xX (X=Al, Si) Heusler alloys: First-principles calculations

    NASA Astrophysics Data System (ADS)

    Guezlane, M.; Baaziz, H.; El Haj Hassan, F.; Charifi, Z.; Djaballah, Y.

    2016-09-01

    Density functional theory (DFT) based on the full-potential linearized augmented plane wave (FP-LAPW) method is used to investigate the structural, electronic, magnetic and thermal properties of Co2CrxFe1-xX (X=Al, Si) full Heusler alloys, with L21 structure. The structural properties and spin magnetic moments are investigated by the generalized gradient approximations (GGA) minimizing the total energy. For band structure calculations, GGA, the Engel-Vosko generalized gradient approximation (EVGGA) and modified Becke-Johnson (mBJ) schemes are used. Results of density of states (DOS) and band structures show that these alloys are half-metallic ferromagnets (HMFS). A regular-solution model has been used to investigate the thermodynamic stability of the compounds Co2CrxFe1-xX that indicates a phase miscibility gap. The thermal effects using the quasi-harmonic Debye model are investigated within the lattice vibrations. The temperature and pressure effects on the heat capacities, Debye temperatures and entropy are determined from the non-equilibrium Gibbs functions.

  18. Insights into Ultrafast Demagnetization in Pseudogap Half-Metals

    NASA Astrophysics Data System (ADS)

    Mann, Andreas; Walowski, Jakob; Münzenberg, Markus; Maat, Stefan; Carey, Matthew J.; Childress, Jeffrey R.; Mewes, Claudia; Ebke, Daniel; Drewello, Volker; Reiss, Günter; Thomas, Andy

    2012-10-01

    Interest in femtosecond demagnetization dynamics was sparked by Bigot’s experiment in 1996, which unveiled the elementary mechanisms that relate the electrons’ temperature to their spin order. Simultaneously, the application of fast demagnetization experiments has been demonstrated to provide key insight into technologically important systems such as high-spin-polarization metals, and consequently there is broad interest in further understanding the physics of these phenomena. To gain new and relevant insights, we performed ultrafast optical pump-probe experiments to characterize the demagnetization processes of highly spin-polarized magnetic thin films on a femtosecond time scale. Full spin polarization is obtained in half-metallic ferro- or ferrimagnets, where only one spin channel is populated at the Fermi level, whereas the other one exhibits a gap. In these materials, the spin-scattering processes is controlled via the electronic structure, and thus their ultrafast demagnetization is solely related to the spin polarization via a Fermi golden-rule model. Accordingly, a long demagnetization time correlates with a high spin polarization due to the suppression of the spin-flip scattering at around the Fermi level. Here we show that isoelectronic Heusler compounds (Co2MnSi, Co2MnGe, and Co2FeAl) exhibit a degree of spin polarization between 59% and 86%. We explain this behavior by considering the robustness of the gap against structural disorder. Moreover, we observe that CoFe-based pseudogap materials, such as partially ordered Co-Fe-Ge and Co-Fe-B alloys, can reach similar values of the spin polarization. By using the unique features of these metals we vary the number of possible spin-flip channels, which allows us to pinpoint and control the half-metals’ electronic structure and its influence on the elementary mechanisms of ultrafast demagnetization.

  19. A Comparison of Surface Segregation for two semi-Heusler alloys: TiCoSb and NiMnSb

    NASA Astrophysics Data System (ADS)

    Caruso, A. N.; Borca, C. N.; Dowben, P. A.; Ristoiu, D.; Nozieres, J. P.

    2002-03-01

    Very different types of surface segregation are found for very similar Heusler alloy materials. We observed significant manganese and antimony segregation to the surfaces of the semi-Heusler alloys NiMnSb and TiCoSb respectively. The Mn and Sb surface enrichment was characterized by angle-resolved core level photoemission. Indications of surface disorder from low energy electron diffraction provide complimentary evidence of segregation. It has been established [1,2] that segregation will significantly affect polarization so surface/interface segregation of the types observed for the half Heusler alloys will have substantial implications for spin-electronic devices made from these nominally high polarization materials. [1] D. Ristoiu, et al., Europhysics Letters 49 (2000) 624-630 [2] C. N. Borca, et al., Europhysics Letters 56 (2001) 722-728

  20. Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by MgO interface

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-06-01

    The perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (KU) of 2-3×106 erg/cm3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of KU was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.

  1. Evolution of the electronic structure and optical properties of iron-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Shreder, E. I.; Svyazhin, A. D.; Makhnev, A. A.

    2015-12-01

    The optical properties of Heusler alloys Fe2 MeAl ( Me = Ti, V, Cr, Mn, Fe, Co, or Ni) and Fe2MnSi have been studied, and their optical spectra have been calculated. Substitution for the Me atom is found to cause significant changes in the band-energy spectrum, especially in the vicinity of the Fermi level. These changes are accompanied by considerable variations in the optical characteristics of alloys. The optical properties of Fe2 MeAl alloys ( Me = Ti, Fe, Co, or Ni) are typical of metals. The anomalous behavior of the optical properties of alloys with Me = V, Cr, or Mn is determined by the electronic states at the Fermi level.

  2. Enhancement of ferromagnetism by Ag doping in Ni-Mn-In-Ag Heusler alloys

    NASA Astrophysics Data System (ADS)

    Pandey, Sudip; Quetz, Abdiel; Aryal, Anil; Dubenko, Igor; Mazumdar, Dipanjan; Stadler, Shane; Ali, Naushad

    The effect of Ag on the structural, magnetocaloric, and thermomagnetic properties of Ni50Mn35In15-xAgx (x = 0.1, 0.2, 0.5, and 1) Heusler alloys was studied. The magnitude of the magnetization change at martensitic transition temperature (TM) decreases with increasing Ag concentration A smaller magnetic entropy changes (ΔSM) for the alloys with higher Ag concentration is observed. A shift of TM by about 25 K to a higher temperature was detected for P = 6.6 kbar with respect to ambient pressure. Large drop of resistivity is observed with the increase of Ag concentration. The magnetoresistance is dramatically suppressed with increasing Ag concentration due to the weakening of the antiferromagnetic interactions in the martensitic phase. The experimental results demonstrate that Ag substitution in Ni50Mn35In15-xAgx Heusler alloys suppresses the AFM interactions and enhances the FM interactions in the alloys. The possible mechanisms responsible for the observed behavior are discussed. Acknowledgement: This work was supported by the Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy (DOE Grant No. DE-FG02-06ER46291 and DE-FG02-13ER46946).

  3. Curie temperatures of zinc-blende half-metallic ferromagnets

    NASA Astrophysics Data System (ADS)

    Kübler, J.

    2003-06-01

    Using density-functional theory in the local-density approximation and spin-fluctuation theory, the Curie temperatures of the zinc-blende half-metallic ferromagnets VAs, CrAs, MnAs and the Heusler compound NiMnSb have been estimated, the lower bounds obtained being ab initio. The orders of magnitude are the same as the Curie temperature of the half-metallic ferromagnet NiMnSb with Tc=701 K. Of the three compounds VAs, CrAs, and MnAs, the highest Tc is calculated for CrAs, for which the Fermi energy is in the middle of the minority-spin electron gap; its Curie temperature might be as high as 1000 K. The Curie temperature drops sharply when the Fermi energy moves into the minority-electron conduction band as in the case of MnAs.

  4. Diffusion-driven crystal structure transformation: synthesis of Heusler alloy Fe3Si nanowires.

    PubMed

    Seo, Kwanyong; Bagkar, Nitin; Kim, Si-in; In, Juneho; Yoon, Hana; Jo, Younghun; Kim, Bongsoo

    2010-09-01

    We report fabrication of Heusler alloy Fe(3)Si nanowires by a diffusion-driven crystal structure transformation method from paramagnetic FeSi nanowires. Magnetic measurements of the Fe(3)Si nanowire ensemble show high-temperature ferromagnetic properties with T(c) > 370 K. This methodology is also successfully applied to Co(2)Si nanowires in order to obtain metal-rich nanowires (Co) as another evidence of the structural transformation process. Our newly developed nanowire crystal transformation method would be valuable as a general method to fabricate metal-rich silicide nanowires that are otherwise difficult to synthesize.

  5. Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys.

    PubMed

    Gandi, Appala Naidu; Schwingenschlögl, Udo

    2016-05-18

    We solve the transport equations of the electrons and phonons to understand the thermoelectric behaviour of the technologically important half-Heusler alloys MNiSn (M: Ti, Zr, Hf). Doping is simulated within the rigid band approximation. We clarify the origin of the electron dominated thermoelectric response and determine the carrier concentrations with maximal figures of merit. The phonon mean free path is studied to calculate the grain size below which grain refinement methods can enforce ballistic heat conduction to enhance the figure of merit.

  6. Magnetocaloric effect in ribbon samples of Heusler alloys Ni-Mn-M (M=In,Sn)

    NASA Astrophysics Data System (ADS)

    Aliev, A. M.; Batdalov, A. B.; Kamilov, I. K.; Koledov, V. V.; Shavrov, V. G.; Buchelnikov, V. D.; García, J.; Prida, V. M.; Hernando, B.

    2010-11-01

    Direct measurements of the magnetocaloric effect in samples of rapidly quenched ribbons of Mn50Ni40In10 and Ni50Mn37Sn13 Heusler alloys with potential applications in magnetic refrigeration technology are carried out. The measurements were made by a precise method based on the measurement of the oscillation amplitude of the temperature in the sample while is subjected to a modulated magnetic field. In the studied compositions both direct and inverse magnetocaloric effects associated with magnetic (paramagnet-ferromagnet-antiferromagnet) and structural (austenite-martensite) phase transitions are found. Additional inverse magnetocaloric effects of small value are observed around the ferromagnetic transitions.

  7. Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys.

    PubMed

    Gandi, Appala Naidu; Schwingenschlögl, Udo

    2016-05-18

    We solve the transport equations of the electrons and phonons to understand the thermoelectric behaviour of the technologically important half-Heusler alloys MNiSn (M: Ti, Zr, Hf). Doping is simulated within the rigid band approximation. We clarify the origin of the electron dominated thermoelectric response and determine the carrier concentrations with maximal figures of merit. The phonon mean free path is studied to calculate the grain size below which grain refinement methods can enforce ballistic heat conduction to enhance the figure of merit. PMID:27156360

  8. Evidence for ferromagnetic strain glass in Ni-Co-Mn-Ga Heusler alloy system

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Huang, Chonghui; Gao, Jinghui; Yang, Sen; Ding, Xiangdong; Song, Xiaoping; Ren, Xiaobing

    2012-09-01

    We report that both a strain glass transition and a ferromagnetic transition take place in a Ni43Co12Mn20Ga25 Heusler alloy. This results in a ferromagnetic strain glass with coexisting short range strain ordering and long range magnetic moment ordering. The phase diagram of the Ni-Co-Mn-Ga system shows that the substitutional point defect Co in the Ni-site plays the following roles: (i) suppressing the long range strain ordering of martensite, (ii) promoting local strain ordering of strain glass by producing random local stresses, and (iii) enhancing the ferromagnetic exchange interaction, which leads to the formation of ferromagnetic strain glass.

  9. Progress Report 2011: Understanding compound phase transitions in Heusler alloy giant magnetocaloric materials

    SciTech Connect

    Stadler, Shane

    2011-12-13

    Our goal is to gain insight into the fundamental physics that is responsible for magnetocaloric effects (MCE) and related properties at the atomic level. We are currently conducting a systematic study on the effects of atomic substitutions in Ni2MnGa-based alloys, and also exploring related full- and half-Heusler alloys, for example Ni-Mn-X (X=In, Sn, Sb), that exhibit a wide variety of interesting and potentially useful physical phenomena. It is already known that the magnetocaloric effect in the Heusler alloys is fundamentally connected to other interesting phenomena such as shape-memory properties. And the large magnetic entropy change in Ni2Mn0.75Cu0.25Ga has been attributed to the coupling of the first-order, martensitic transition with the second-order ferromagnetic paramagnetic (FM-PM) transition. Our research to this point has focused on understanding the fundamental physics at the origin of these complex, compound phase transitions, and the novel properties that emerge. We synthesize the materials using a variety of techniques, and explore their material properties through structural, magnetic, transport, and thermo-magnetic measurements.

  10. Ab initio studies of Co2FeAl1-xSix Heusler alloys

    NASA Astrophysics Data System (ADS)

    Szwacki, N. Gonzalez; Majewski, Jacek A.

    2016-07-01

    We present results of extensive theoretical studies of Co2FeAl1-xSix Heusler alloys, which have been performed in the framework of density functional theory employing the all-electron full-potential linearized augmented plane-wave scheme. It is shown that the Si-rich alloys are more resistive to structural disorder and as a consequence Si stabilizes the L21 structure. Si alloying changes position of the Fermi level, pushing it into the gap of the minority spin-band. It is also shown that the hyperfine field on Co nuclei increases with the Si concentration, and this increase originates mostly from the changes in the electronic density of the valence electrons.

  11. Structural and magnetic properties of quaternary Co{sub 2}Mn{sub 1-x}Cr{sub x}Si Heusler alloy thin films

    SciTech Connect

    Aftab, M.; Hassnain Jaffari, G.; Hasanain, S. K.; Ismat Shah, S.

    2011-09-01

    We present the structural, magnetic, and transport properties of quaternary Co{sub 2}Mn{sub 1-x}Cr{sub x}Si (0 {<=} x {<=} 1) Heusler alloy thin films prepared by DC magnetron sputtering on commercially available glass substrates without any buffer layer. Recent theoretical calculations have shown the compositions to be half-metallic. XRD patterns show the presence of L2{sub 1} structure in the films for x = 0, however, the peaks intensities are not in accordance with the literature. High resolution transmission electron microscopy images of films show granular morphologies, crystalline growth, and an ordered L2{sub 1} structure for x {<=} 0.6. For higher Cr concentrations, secondary phases start to appear in the films. Magnetization measurements as a function of applied magnetic field show that the saturation moments for x {<=} 0.2 follow the Slater-Pauling rule, however, for 0.2 < x {<=} 0.6 the saturation moments fall short of the theoretically predicted values. Transport measurements at room temperature show a monotonic increase in resistivity with increasing Cr concentration. These results are explained in terms of texturing effects, Co-Cr antisite disorder, presence of secondary phases, and the amount of disorder present in the films.

  12. Structural, electronic and magnetic properties of Fe2-based full Heusler alloys: A first principle study

    NASA Astrophysics Data System (ADS)

    Dahmane, F.; Mogulkoc, Y.; Doumi, B.; Tadjer, A.; Khenata, R.; Bin Omran, S.; Rai, D. P.; Murtaza, G.; Varshney, Dinesh

    2016-06-01

    Using the first-principles density functional calculations, the structural, electronic and magnetic properties of the Fe2XAl (X=Cr, Mn, Ni) compounds in both the Hg2CuTi and Cu2MnAl-type structures were studied by the full-potential linearized augmented plane waves (FP-LAPW) method. The exchange and correlation potential is treated by the generalized-gradient approximation (GGA) where the results show that the Cu2MnAl-type structure is energetically more stable than the Hg2CuTi-type structure for the Fe2CrAl and Fe2MnAl compounds at the equilibrium volume. The full Heusler compounds Fe2XAl (X=Cr, Mn) are half-metallic in the Cu2MnAl-type structure. Fe2NiAl has a metallic character in both CuHg2Ti and AlCu2Mn-type structures. The total magnetic moments of the Fe2CrAl and Fe2MnAl compounds are 1.0 and 2.0 μB, respectively, which are in agreement with the Slater-Pauling rule Mtot=Ztot- 24.

  13. Hyperfine magnetic field on Cd-111 in Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn)

    NASA Technical Reports Server (NTRS)

    Jha, S.; Mitros, C.; Lahamer, Amer; Yehia, Sherif; Julian, Glenn M.

    1989-01-01

    The time differential perturbed angular correlation method has been used to measure, as a function of temperature, the hyperfine magnetic field at Cd sites in the Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn). The hyperfine fields, normalized to the total magnetic moment per formula unit, show an approximately linear trend toward more positive values with increasing lattice parameter.

  14. Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets

    NASA Astrophysics Data System (ADS)

    Kokado, Satoshi; Sakuraba, Yuya; Tsunoda, Masakiyo

    2016-10-01

    We derive a simple relational expression between the spin polarization ratio of resistivity, $P_\\rho$, and the anisotropic magnetoresistance ratio $\\Delta \\rho/\\rho$, and that between the spin polarization ratio of the density of states at the Fermi energy, $P_{\\rm DOS}$, and $\\Delta \\rho/\\rho$ for nearly half-metallic ferromagnets. We find that $P_\\rho$ and $P_{\\rm DOS}$ increase with increasing $|\\Delta \\rho/\\rho|$ from 0 to a maximum value. In addition, we roughly estimate $P_\\rho$ and $P_{\\rm DOS}$ for a Co$_2$FeGa$_{0.5}$Ge$_{0.5}$ Heusler alloy by substituting its experimentally observed $\\Delta \\rho/\\rho$ into the respective expressions.

  15. Thermoelectric properties of ultra-low thermal conductivity half-Heusler alloy

    NASA Astrophysics Data System (ADS)

    Mallick, Md. Mofasser; Vitta, Satish

    2016-05-01

    The half-Heusler alloy HfNiGe has been synthesized by arc melting from high purity elements followed by annealing at 1000 K for 6 days to homogenize completely. The X-ray diffraction pattern indicates the presence of mainly an orthorhombic phase with small amount of other binary phases. The electrical resistivity is found to be low and increases slightly with temperature from 14 µΩ-m to 24 µΩ-m, indicating a semi metallic behavior. As a result the Seebeck coefficient is found to be low and also increases with temperature from -11 µV K-1 to -19.5 µV K-1. The thermal conductivity has been determined using a combination of heat capacity and thermal diffusivity. It decreases from ~ 1.9 Wm-1K-1 at room temperature to ~ 0.007 Wm-1K-1 at 843 K, an extremely low value for a half-Heusler alloy. The thermal conductivity reduction is found to be mainly due to a sharp decrease in heat capacity for T> 650 K. This leads to a divergence of figure of merit at high temperatures, >800K, from ~0.05 to 2 at 843 K.

  16. Correlation between processing conditions, microstructure and charge transport in half-Heusler alloys

    SciTech Connect

    Makongo, Julien P.A.; Zhou, Xiaoyuan; Misra, Dinesh K.; Uher, Ctirad; Poudeu, Pierre F.P.

    2013-05-01

    Five bulk samples of n-type Zr₀.₂₅Hf₀.₇₅NiSn₀.₉₇₅Sb₀.₀₂₅ half-Heusler (HH) alloy were fabricated by reacting elemental powders via (1) high temperature solid state (SS) reaction and (2) mechanical alloying (MA), followed by densification using spark plasma sintering (SPS) and/or hot pressing (HP). A portion of the sample obtained by SS reaction was mechanically alloyed before consolidation by hot pressing (SS–MA–HP). X-ray powder diffraction and transmission electron microscopy studies revealed that all SS specimen (SS–SPS, SS–HP, SS–MA–HP) are single phase HH alloys, whereas the MA sample (MA–SPS) contains metallic nanoprecipitates. Electronic and thermal transport measurements showed that the embedded nanoprecipitates induce a drastic increase in the carrier concentration (n), a large decrease in the Seebeck coefficient (S) and a marginal decrease in the lattice thermal conductivity (κl) of the MA–SPS sample leading to lower ZT values when compared to the SS–HP samples. Constant values of S are observed for the SS series regardless of the processing method. However, a strong dependence of the carrier mobility (μ), electrical conductivity (σ) and κl on the processing and consolidation method is observed. For instance, mechanical alloying introduces additional structural defects which enhance electron and phonon scattering leading to moderately low values of μ and large reduction in κl. This results in a net 20% enhancement in the figure of merit (ZT=0.6 at 775 K). HH specimen of the same nominal composition with higher ZT is anticipated from a combination of SS reaction, MA and SPS (SS–MA–SPS). - Graphical abstract: In half-Heusler alloys, thermopower values are insensitive to processing method, whereas carrier mobility (μ), electrical conductivity (σ), and κl strongly dependent on the microstructure which in turn is altered by the synthesis, processing and

  17. Anti-site disorder and improved functionality of Mn₂NiX (X = Al, Ga, In, Sn) inverse Heusler alloys

    SciTech Connect

    Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip; Sanyal, Biplab

    2014-10-07

    Recent first-principles calculations have predicted Mn₂NiX (X = Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn₂NiGa and Mn₂NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn₂NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

  18. Unusual electronic transport properties in doped TiCoSb Half-Heusler Alloys*

    NASA Astrophysics Data System (ADS)

    Xia, Y.; Bhattacharya, S.; Ponnambalam, V.; Poon, S. J.; Pope, A. L.; Tritt, T. M.

    1999-11-01

    The sublattices of semiconducting TiCoSb Half-Heusler alloys are systematically doped and the resulting electrical transport properties are investigated. While all three sites can be doped to result in semimetallic behavior, transport behavior that can be ascribed to the presence of mobility edge and impurity band are observed in the vanadium- and manganese- doped alloys. Resistivity values reaching several W-cm and several hundred W-cm at 295K and 4.2K, respectively, are observed. Properties such as these have not been reported previously for a metal-rich bandgap compound. Specific heat measurements also indicate anomalous results at low temperature. Hall effect and thermopower measurements will be discussed.

  19. Ferromagnetic exchange interaction between Co and Mn in the Heusler alloy CuCoMnAl

    SciTech Connect

    Feng, L.; Ma, L.; Zhu, Z. Y.; Zhu, W.; Liu, E. K.; Chen, J. L.; Wu, G. H.; Meng, F. B.; Liu, H. Y.; Luo, H. Z.; Li, Y. X.

    2010-01-15

    The ferromagnetic exchange interaction between Co and Mn in Heusler alloys has been phenomenologically investigated by analyzing the composition dependence of the magnetic moment and the Curie temperature in a series of quaternary CuCoMnAl alloys. The curves of the composition dependence of the magnetic moment show an interesting valleylike profile and their minima are positioned at different Co contents for different Mn concentrations. The ferromagnetic Co-Mn exchange interaction is a short-range effect which is only effective at the nearest-neighbor distance. At this distance, the exchange interaction can be further enhanced by a Mn-rich composition, but it might be destroyed by the lattice distortion due to the martensitic transformation.

  20. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  1. Effect of isoelectronic substitution on magnetic properties of Ni(2)Mn(GaB) Heusler alloys.

    PubMed

    Gautam, Bhoj Raj; Dubenko, Igor; Pathak, Arjun Kumar; Stadler, Shane; Ali, Naushad

    2008-11-19

    We have studied the structural and magnetic properties of Ni(2)MnGa(1-x)B(x) Heusler alloys with 0≤x≤0.25 using x-ray diffraction, thermal expansion, electrical resistivity, and magnetization measurements. The magnetization measurements were made within the temperature interval of 5-400 K and at applied magnetic field of 0-5 T. The samples with low B concentrations (x<0.05) were found to be of the cubic L2(1) phase at 300 K. A martensitic phase along with the cubic L2(1) phase appears for x≥0.05, and the amount of the martensitic phase was found to increase with increasing x. The critical concentration of the boron substitution (within which Heusler phases exist) was found to be around x = 0.1. The cubic cell parameter was observed to decrease with increasing x in the interval 0≤x≤0.1. The alloys were ferromagnetically ordered at 5 K and the saturation magnetization (M(S)) was found to decrease with increasing boron concentration. The Curie temperatures (T(C)) and martensitic transition temperatures (T(M)) for the alloys with 0≤x≤0.25 have been determined and a phase (T-x) diagram has been constructed. T(M) increases rapidly and T(C) decreases slowly with increasing B concentration in the interval 0≤x≤0.1. The dependence of the phase transition temperatures and magnetization on B concentration is discussed.

  2. Phase Stability of L21 Phase in Co-BASED Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Umetsu, Rie Y.; Okubo, Akinari; Nagasako, Makoto; Ohtsuka, Makoto; Kainuma, Ryosuke; Ishida, Kiyohito

    2014-10-01

    Order-disorder phase transition temperature from L21 to B2 phase, TtL21/B2, in Co-based Heusler alloys was systematically investigated based on the Braggs-Williams-Gorsky (BWG) approximation. Because height of TtL21/B2 closely correlates to phase stability of the L21 phase, confirmation of TtL21/B2 would be a key to obtain a highly ordered L21 phase. From modification with the BWG approximation it was shown that the degree of order indicated temperature dependence, namely, the degree of order decreased above around 0.6 TtL21/B2 and reached zero at TtL21/B2. Therefore, it should be better to select the Co-based Heusler alloys with a higher value of TtL21/B2 if the higher degree of order in the L21 phase is desired by thermal annealing at as low temperature as possible. From powder neutron diffraction (ND) studies of Co2YGa (Y = Ti, V, Cr, Mn and Fe) alloys it was actually confirmed that materials with higher value of TtL21/B2 indicated higher degree of order even in the same annealing temperature. Studies for the phase state in Co-Ti-Fe-Ga films also showed that a height of TtL21/B2 concretely correlated to the phase stability of the L21 phases, that is, the specimen with higher value of TtL21/B2 was easy to obtain with a higher degree of order.

  3. Electronic and Magneto-Transport Across the Heusler Alloy (Co2FeAl)/ p-Si Interfacial Structure

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Srivastava, P. C.

    2014-02-01

    Electronic and magneto-transport across the Heusler alloy Co2FeAl (CFA)/ p-Si structure have been studied. The morphology of the Heusler alloy film surface has also been characterized by atomic force microscopy and magnetic force microscopy (MFM). X-ray diffraction data revealed formation of the CFA alloy phase with the L21 structure. MFM results revealed formation of a fine domain structure of average size ˜10 nm and magnetic signal strength 0.23°. The I- V characteristics are strongly temperature-dependent between ˜80 K and 300 K for forward bias, compared with weak temperature dependence on reversing the polarity. At low temperature the I- V characteristics have the features of a backward diode. The observed strong temperature dependence is because of thermionic emission of carriers across the interface. The weak temperature dependence is because of dominant field-emission tunnelling of carriers across the interface. Large magnetic field sensitivity of the reverse current has also been observed. The observed magnetic field sensitivity for the reverse current shows the involvement of electronic spin in transport across the interface, from the Heusler alloy to the silicon. An MR of ˜35% in the presence of a magnetic field was estimated from the I- V data. The study has shown that spin-dependent tunnel transport from the CFA alloy to silicon across the interface results in the observed value of MR, which seems to be because of spin scattering.

  4. Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias.

    PubMed

    Nayak, Ajaya K; Nicklas, Michael; Chadov, Stanislav; Khuntia, Panchanana; Shekhar, Chandra; Kalache, Adel; Baenitz, Michael; Skourski, Yurii; Guduru, Veerendra K; Puri, Alessandro; Zeitler, Uli; Coey, J M D; Felser, Claudia

    2015-07-01

    Rational material design can accelerate the discovery of materials with improved functionalities. This approach can be implemented in Heusler compounds with tunable magnetic sublattices to demonstrate unprecedented magnetic properties. Here, we have designed a family of Heusler alloys with a compensated ferrimagnetic state. In the vicinity of the compensation composition in Mn-Pt-Ga, a giant exchange bias (EB) of more than 3 T and a large coercivity are established. The large exchange anisotropy originates from the exchange interaction between the compensated host and ferrimagnetic clusters that arise from intrinsic anti-site disorder. Our design approach is also demonstrated on a second material with a magnetic transition above room temperature, Mn-Fe-Ga, exemplifying the universality of the concept and the feasibility of room-temperature applications. These findings may lead to the development of magneto-electronic devices and rare-earth-free exchange-biased hard magnets, where the second quadrant magnetization can be stabilized by the exchange bias.

  5. Effect of Ti Substitution on Thermoelectric Properties of W-Doped Heusler Fe2VAl Alloy

    NASA Astrophysics Data System (ADS)

    Mikami, M.; Ozaki, K.; Takazawa, H.; Yamamoto, A.; Terazawa, Y.; Takeuchi, T.

    2013-07-01

    Effects of element substitutions on thermoelectric properties of Heusler Fe2VAl alloys were evaluated. By W substitution at the V site, the thermal conductivity is reduced effectively because of the enhancement of phonon scattering resulting from the introduction of W atoms, which have much greater atomic mass and volume than the constituent elements of Fe2VAl alloy. W substitution is also effective to obtain a large negative Seebeck coefficient and high electrical conductivity through an electron injection effect. To change the conduction type from n-type to p-type, additional Ti substitution at the V site, which reduces the valence electron density, was examined. A positive Seebeck coefficient as high as that of conventional p-type Fe2VAl alloy was obtained using a sufficient amount of Ti substitution. Electrical resistivity was reduced by the hole doping effect of the Ti substitution while maintaining low thermal conductivity. Compared with the conventional solo-Ti-substituted p-type Fe2VAl alloy, the ZT value was improved, reaching 0.13 at 450 K.

  6. Reducing the nucleation barrier in magnetocaloric Heusler alloys by nanoindentation

    NASA Astrophysics Data System (ADS)

    Niemann, R.; Hahn, S.; Diestel, A.; Backen, A.; Schultz, L.; Nielsch, K.; Wagner, M. F.-X.; Fähler, S.

    2016-06-01

    Magnetocaloric materials are promising as solid state refrigerants for more efficient and environmentally friendly cooling devices. The highest effects have been observed in materials that exhibit a first-order phase transition. These transformations proceed by nucleation and growth which lead to a hysteresis. Such irreversible processes are undesired since they heat up the material and reduce the efficiency of any cooling application. In this article, we demonstrate an approach to decrease the hysteresis by locally changing the nucleation barrier. We created artificial nucleation sites and analyzed the nucleation and growth processes in their proximity. We use Ni-Mn-Ga, a shape memory alloy that exhibits a martensitic transformation. Epitaxial films serve as a model system, but their high surface-to-volume ratio also allows for a fast heat transfer which is beneficial for a magnetocaloric regenerator geometry. Nanoindentation is used to create a well-defined defect. We quantify the austenite phase fraction in its proximity as a function of temperature which allows us to determine the influence of the defect on the transformation.

  7. A unified approach to describe the thermal and magnetic hysteresis in Heusler alloys

    NASA Astrophysics Data System (ADS)

    Blázquez, J. S.; Franco, V.; Conde, A.; Gottschall, T.; Skokov, K. P.; Gutfleisch, O.

    2016-09-01

    Different excitations, like temperature, magnetic field, or pressure, can drive a martensitic transition in Heusler alloys. Coupled phenomena in these materials lead to interesting magnetocaloric and barocaloric effects ascribed to this transition. In this work, we demonstrate that isothermal transformations induced by a magnetic field and isofield transformations induced by the temperature can be described using the same framework. By defining an effective temperature that relates field and temperature through the properties of the system (magnetic moment and entropy of the transition), both kinds of loops can be transformed into the other kind, therefore providing a more effective way of characterizing hysteretic samples. The validity of this effective temperature approach to describe the transition holds for martensite to austenite transformations as well as reversal ones, and thus, the hysteresis phenomena can be described using this single general excitation.

  8. Magnetic properties and atomic ordering of BCC Heusler alloy Fe2MnGa ribbons

    NASA Astrophysics Data System (ADS)

    Xin, Yuepeng; Ma, Yuexing; Luo, Hongzhi; Meng, Fanbin; Liu, Heyan

    2016-05-01

    The electronic structure, atomic disorder and magnetic properties of the Heusler alloy Fe2MnGa have been investigated experimentally and theoretically. BCC Fe2MnGa ribbon samples were prepared. Experimentally, a saturation magnetic moment (3.68 μB at 5 K) much larger than the theoretical value (2.04 μB) has been reported. First-principles calculations indicate that the difference is related to the Fe-Mn disorder between A, B sites, as can also be deduced from the XRD pattern. L21 type Fe2MnGa is a ferrimagnet with antiparallel Fe and Mn spin moments. However, when Fe-Mn disorder occurs, part of Mn moments will be parallel to Fe moments, and the Fe moments also clearly increase simultaneously. All this results in a total moment of 3.74 μB, close to the experimental value.

  9. Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomoki; Kubota, Takahide; Sugiyama, Tomoko; Huminiuc, Teodor; Hirohata, Atsufumi; Takanashi, Koki

    2016-06-01

    Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.

  10. On the rich magnetic phase diagram of (Ni, Co)-Mn-Sn Heusler alloys

    NASA Astrophysics Data System (ADS)

    Grünebohm, A.; Herper, H. C.; Entel, P.

    2016-10-01

    We put a spotlight on the exceptional magnetic properties of the metamagnetic Heusler alloy (Ni, Co)-Mn-Sn by means of first principles simulations. In the energy landscape we find a multitude of local minima, which belong to different ferrimagnetic states and are close in total magnetization and energy. All these magnetic states correspond to the local high spin state of the Mn atoms with different spin alignments and are related to the magnetic properties of Mn. Compared to pure Mn, the magneto-volume coupling is reduced by Ni, Co and Sn atoms in the lattice and no local low-spin Mn states appear. For the cubic phase we find a ferromagnetic ground state whereas the global energy minimum is a tetragonal state with a complicated spin structure and vanishing magnetization which so far has been overlooked in simulations.

  11. Electron spin resonance probed competing states in NiMnInSi Heusler alloy

    NASA Astrophysics Data System (ADS)

    Chen, Y. S.; Lin, J. G.; Titov, I. S.; Granovsky, A. B.

    2016-06-01

    Shape memory Heusler alloy Ni50Mn35In12Si3 is investigated with electron spin resonance (ESR) technique in a temperature range of 200-300 K. ESR is a dynamic probe allowing us to separate the responses from various magnetic phases, thus to study the complex phase transitions. The sample shows three transition temperatures: TcA (271 K), TM (247 K) and TcM (212 K), where TcA is the Curie temperature of austenitic phase, TM and TcM are the temperatures of magnetostructural martensitic transition and the Curie temperature of martensitic phase, respectively. Furthermore, ESR data reveals the coexistence of two magnetic modes in whole temperature range of 200-300 K. Particularly in martensitic phase, two magnetic modes are attributed to two different kinds of lattice deformation, the slip and twinning deformations.

  12. Static and dynamic magnetic properties of epitaxial Co2FeAl Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Ortiz, G.; Gabor, M. S.; Petrisor, T., Jr.; Boust, F.; Issac, F.; Tiusan, C.; Hehn, M.; Bobo, J. F.

    2011-04-01

    Structural and magnetic properties of epitaxial Co2FeAl Heusler alloy thin films were investigated. Films were deposited on single crystal MgO (001XS) substrates at room temperature, followed by an annealing process at 600 °C. MgO and Cr buffer layers were introduced in order to enhance crystalline quality, and improve magnetic properties. Structural analyses indicate that samples have grown in the B2 ordered epitaxial structure. VSM measures show that the MgO buffered sample displays a magnetization saturation of 1010 ± 30 emu/cm3, and Cr buffered sample displays a magnetization saturation of 1032 ± 40 emu/cm3. Damping factor was studied by strip-line ferromagnetic resonance measures. We observed a maximum value for the MgO buffered sample of about 8.5 × 10-3, and a minimum value of 3.8 × 10-3 for the Cr buffered one.

  13. Nature of electron correlation and hybridization in NixCu1-xMnSb Heusler alloys

    NASA Astrophysics Data System (ADS)

    Sarkar, I.; Yusuf, S. M.; Halder, M.; Gloskovskii, A.; Drube, W.

    2016-08-01

    The electronic structure of Heusler alloys having mixed magnetic phases, comprising of vicinal anti-ferromagnetic and ferromagnetic orders, is of great significance. We present the results of an electronic structure study on NixCu1-xMnSb Heusler alloys, using Mn-2p core-level photoemission spectroscopy. Room temperature data in the paramagnetic phase reveal a non-monotonic variation of both electron correlation strength and conduction-band hybridization such that the former enhances while the latter weakens for compositions showing a mixed phase relative to compositions at the phase boundaries to the ordered phases. The results suggest a possible electronic driving force for settling mixed-magnetic phases.

  14. The structural, electronic, magnetic and mechanical properties of quaternary Heusler alloys ZrTiCrZ (Z  =  Al, Ga, In, Si, Ge, Sn): a first-principles study

    NASA Astrophysics Data System (ADS)

    Yan, Peng-Li; Zhang, Jian-Min; Zhou, Bo; Xu, Ke-Wei

    2016-06-01

    The structural, electronic, magnetic and mechanical properties of the quaternary Heusler alloys ZrTiCrZ (Z  =  Al, Ga, In, Si, Ge, Sn) have been investigated firstly by using the first-principles calculations. The preferred configurations of the ZrTiCrZ alloys are all Y-type (I). At their equilibrium lattice constants, the ZrTiCrZ alloys are half-metallic (HM) ferrimagnets for Z  =  Al, Ga and In, while spin-gapless semiconductor (SGS) antiferromagnets (AFM) for Z  =  Si, Ge and Sn. The total magnetic moments {μt} of the ZrTiCrZ alloys are  -1 {μ\\text{B}}/\\text{f}\\text{.u}\\text{.} for Z  =  Al, Ga and In, while 0 {μ\\text{B}}/\\text{f}\\text{.u}\\text{.} for Z  =  Si, Ge and Sn, both linearly scaled with the total number of valence electrons {{Z}\\text{t}} by Slater-Pauling rule {μ\\text{t}}={{Z}\\text{t}}-18 . The elastic constants {{C}11} , {{C}12} and {{C}44} of the single crystal and the related elastic moduli G , B , E , \\upsilon and A of the polycrystalline aggregates are also calculated and used to study the mechanical stability of these alloys. Although the Curie temperatures {{T}\\text{C}} of the ZrTiCrZ alloys are overestimated by using the mean field approximation (MFA), they can be better estimated by including the exchange interactions. Finally, the HM stabilities as well as the total and atomic magnetic moments of the ZrTiCrZ alloys (Z  =  Al, Ga, In) under either hydrostatic strain or tetragonal strain are also discussed.

  15. The structural, electronic, magnetic and mechanical properties of quaternary Heusler alloys ZrTiCrZ (Z  =  Al, Ga, In, Si, Ge, Sn): a first-principles study

    NASA Astrophysics Data System (ADS)

    Yan, Peng-Li; Zhang, Jian-Min; Zhou, Bo; Xu, Ke-Wei

    2016-06-01

    The structural, electronic, magnetic and mechanical properties of the quaternary Heusler alloys ZrTiCrZ (Z  =  Al, Ga, In, Si, Ge, Sn) have been investigated firstly by using the first-principles calculations. The preferred configurations of the ZrTiCrZ alloys are all Y-type (I). At their equilibrium lattice constants, the ZrTiCrZ alloys are half-metallic (HM) ferrimagnets for Z  =  Al, Ga and In, while spin-gapless semiconductor (SGS) antiferromagnets (AFM) for Z  =  Si, Ge and Sn. The total magnetic moments {μt} of the ZrTiCrZ alloys are  ‑1 {μ\\text{B}}/\\text{f}\\text{.u}\\text{.} for Z  =  Al, Ga and In, while 0 {μ\\text{B}}/\\text{f}\\text{.u}\\text{.} for Z  =  Si, Ge and Sn, both linearly scaled with the total number of valence electrons {{Z}\\text{t}} by Slater–Pauling rule {μ\\text{t}}={{Z}\\text{t}}-18 . The elastic constants {{C}11} , {{C}12} and {{C}44} of the single crystal and the related elastic moduli G , B , E , \\upsilon and A of the polycrystalline aggregates are also calculated and used to study the mechanical stability of these alloys. Although the Curie temperatures {{T}\\text{C}} of the ZrTiCrZ alloys are overestimated by using the mean field approximation (MFA), they can be better estimated by including the exchange interactions. Finally, the HM stabilities as well as the total and atomic magnetic moments of the ZrTiCrZ alloys (Z  =  Al, Ga, In) under either hydrostatic strain or tetragonal strain are also discussed.

  16. A combinatorial study of inverse Heusler alloys by first-principles computational methods.

    PubMed

    Gillessen, Michael; Dronskowski, Richard

    2010-02-01

    In continuation of our recent combinatorial work on 810 X(2)YZ full Heusler alloys, a computational study of the same class of materials but with the inverse (XY)XZ crystal structure has been performed on the basis of first-principles (GGA) total-energy calculations using pseudopotentials and plane waves. The predicted enthalpies of formation evidence 27 phases to be thermochemically stable against the elements and the regular X(2)YZ type. A chemical-bonding study yields an inherent tendency for structural distortion in a majority of these alloys, and we predict the existence of the new tetragonal phase Fe(2)CuGa (P4(2)/ncm; a = 5.072 A, c = 7.634 A; c/a approximately 1.51) with a saturation moment of mu = 4.69 micro(B) per formula unit. Thirteen more likewise new, isotypical phases are predicted to show essentially the same behavior. Six phases turn out to be the most stable in the inverse tetragonal arrangement. The course of the magnetic properties as a function of the valence-electron concentration is analyzed using a Slater-Pauling approach.

  17. Structural ordering tendencies in the new ferromagnetic Ni-Co-Fe-Ga-Zn Heusler alloys

    NASA Astrophysics Data System (ADS)

    Dannenberg, Antje; Siewert, Mario; Gruner, Markus E.; Wuttig, Manfred; Entel, Peter

    In search for new ferromagnetic shape memory alloys (FSMA) we have calculated structural energy differences, magnetic exchange interaction constants and mixing energies of quaternary (X1X2)YZ Heusler alloys with X1,X2,Y =Ni,Co,Fe and Z=Ga, Zn using density functional theory. The comparison of the energy profiles of (NiCo)FeZ, (FeNi)CoZ, and (FeCo)NiZ with Z=Ga and Zn as a function of the tetragonal distortion c / a reveals that the energetically preferred ordering type is (NiCo)FeGa and (NiCo)FeZn which shows that Fe prefers to occupy the same cubic sublattice as Ga or Zn what implies that Fe favors Co and Ni as nearest neighbors, respectively. The Curie temperatures of (NiCo)FeGa and (NiCo)FeZn are high of the order of 600 K. (NiCo)FeGa, which has the same valence electron concentration (e/a=7.5) as Ni2MnGa and also possesses a high martensitic transformation temperature (>500 K), is of interest for future magnetic shape memory devices.

  18. On the Challenges of Reducing Contact Resistances in Thermoelectric Generators Based on Half-Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Ngan, Pham Hoang; Van Nong, Ngo; Hung, Le Thanh; Balke, Benjamin; Han, Li; Hedegaard, Ellen Marie Jensen; Linderoth, Søren; Pryds, Nini

    2016-01-01

    A method using fast hot pressing to join half-Heusler (HH) thermoelectric materials directly to an electrical current collector (Ag electrode) without using a third filler material is introduced. The compositions of the HH alloys used are Hf0.5Zr0.5CoSn0.2Sb0.8 and Ti0.6Hf0.4NiSn for p- and n-type, respectively. Using this method, the quality of the HH-electrode contacts is improved due to their low electrical contact resistance and less reaction-diffusion layer. The microstructure and chemical composition of the joints were examined using a scanning electron microscope equipped with energy-dispersive x-ray analysis. The electrical characteristics of the interfaces at the contacts were studied based on electrical contact resistance and Seebeck scanning microprobe measurements. In this paper, we show that joining the HH to a Ag electrode directly using fast hot pressing resulted in lower contact resistance and better performance compared with the method of using active brazing filler alloy.

  19. A combinatorial study of inverse Heusler alloys by first-principles computational methods.

    PubMed

    Gillessen, Michael; Dronskowski, Richard

    2010-02-01

    In continuation of our recent combinatorial work on 810 X(2)YZ full Heusler alloys, a computational study of the same class of materials but with the inverse (XY)XZ crystal structure has been performed on the basis of first-principles (GGA) total-energy calculations using pseudopotentials and plane waves. The predicted enthalpies of formation evidence 27 phases to be thermochemically stable against the elements and the regular X(2)YZ type. A chemical-bonding study yields an inherent tendency for structural distortion in a majority of these alloys, and we predict the existence of the new tetragonal phase Fe(2)CuGa (P4(2)/ncm; a = 5.072 A, c = 7.634 A; c/a approximately 1.51) with a saturation moment of mu = 4.69 micro(B) per formula unit. Thirteen more likewise new, isotypical phases are predicted to show essentially the same behavior. Six phases turn out to be the most stable in the inverse tetragonal arrangement. The course of the magnetic properties as a function of the valence-electron concentration is analyzed using a Slater-Pauling approach. PMID:19554554

  20. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    SciTech Connect

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  1. Synthesis and characterization of Co2FeAl Heusler alloy nanoparticles

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Srivastava, P. C.

    2013-10-01

    Heusler alloy Co2FeAl (CFA) nanoparticles have been synthesized by reducing a mixture of the precursors: CoCl2·6H2O, Fe(NO3)3·9H2O and AlCl3·6H2O under H2 atmosphere. XRD, SEM and TEM techniques have been used for the characterization of the prepared material. XRD and SAED data from TEM show the formation of mixed phases of L21, B2 and A2 type crystal structure of the alloy. The estimated particle size from XRD data and TEM micrograph has been found in the range of 10 nm to 50 nm. The saturation magnetization has been found of 115 emu/g from M-H characteristics which is close to its bulk value of saturation magnetization. Chemical composition of the elements has also been estimated from EDAX, which shows a ratio of Co:Fe:Al as 2.12:1.06:0.81.

  2. Production of copper and Heusler alloy Cu 2MnAl mosaic single crystals for neutron monochromators

    NASA Astrophysics Data System (ADS)

    Courtois, P.; Hamelin, B.; Andersen, K. H.

    2004-08-01

    The growth of high-quality, large single crystals of copper allows the production of very efficient double focusing copper monochromators at ILL. The main difficulty of adapting the crystal mosaic to the instrument requirements has been overcome through the development of specific techniques such as the "onion peel" method and plastic deformations at high temperature. Several instruments have been equipped with new copper monochromators allowing a significant gain in the neutron flux onto the sample. ILL also produces Heusler single crystals with a controlled mosaic for polarized neutrons. Recently, an order of magnitude increase in polarized neutron flux has been reached on the triple axis spectrometer IN20 using a new Heusler monochromator. In addition, the Neutron Optics Laboratory carries out developments in the field of new materials for neutron monochromators. Mixed gradient crystals have been successfully grown with a variation in the d spacing Δ d/ d≈10 -2. Studies on new polarizing crystal alloys are also in progress and NiMnSb Heusler alloy having partially enriched Ni with 60Ni may be interesting for polarized neutron applications.

  3. Structural and magnetization behavior of highly spin polarized Co{sub 2}CrAl full Heusler alloy

    SciTech Connect

    Saha, S. N. Panda, J. Nath, T. K.

    2014-04-24

    The half metallic ferromagnet Co{sub 2}CrAl full Huesler alloy was successfully prepared by arc melting process. The electrical and magnetic properties of Co{sub 2}CrAl alloy have been studied in the temperature range of 5 – 300 K. The ferromagnetic Curie temperature T{sub c} of the same alloy has been observed at 329.8 K. The alloy shows semiconducting like electronic transport behavior throughout the studied temperature range. The origin of the semiconducting behavior of Co{sub 2}CrAl alloy can be best explained by the localization of conduction electrons and the presence of an energy gap in the electronic spectrum near the Fermi level E{sub F}.

  4. The strain induced band gap modulation from narrow gap semiconductor to half-metal on Ti{sub 2}CrGe: A first principles study

    SciTech Connect

    Li, Jia; Zhang, Zhidong; Lu, Zunming; Xie, Hongxian; Fang, Wei; Li, Shaomin; Liang, Chunyong; Yin, Fuxing

    2015-11-15

    The Heusler alloy Ti{sub 2}CrGe is a stable L2{sub 1} phase with antiferromagnetic ordering. With band-gap energy (∼ 0.18 eV) obtained from a first-principles calculation, it belongs to the group of narrow band gap semiconductor. The band-gap energy decreases with increasing lattice compression and disappears until a strain of −5%; moreover, gap contraction only occurs in the spin-down states, leading to half-metallic character at the −5% strain. The Ti{sub 1}, Ti{sub 2}, and Cr moments all exhibit linear changes in behavior within strains of −5%– +5%. Nevertheless, the total zero moment is robust for these strains. The imaginary part of the dielectric function for both up and down spin states shows a clear onset energy, indicating a corresponding electronic gap for the two spin channels.

  5. Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2016-06-01

    Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm2) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm2) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm2) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

  6. Electronic structure of Co-Ni-Ga Heusler alloys studied by resonant photoemission

    SciTech Connect

    Baral, Madhusmita Banik, Soma Ganguli, Tapas Chakrabarti, Aparna Deb, S. K.; Thamizhavel, A.; Wadikar, Avinash; Phase, D. M.

    2014-04-24

    The electronic structures of Co{sub 2.01}Ni{sub 1.05}Ga{sub 0.94} and Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78} Heusler alloys have been investigated by resonant photoemission spectroscopy across the 3p-3d transition of Co and Ni. For the Ni excess composition Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78}, the valence band peak shows a shift of 0.25 eV as compared to the near stoichiometric composition Co{sub 2.01}N1{sub 1.05}Ga{sub 0.94}. Also an enhancement is observed in the Ni related satellite features in the valence band for the Ni excess composition. Due to hybridization of Co and Ni 3d states in these systems, the Co and Ni 3p-3d resonance energies are found to be higher as compared to Co and Ni metals. Theoretical first principle calculation is performed to understand the features in the valence band and the shape of the resonance profile.

  7. Influence of the transition width on the magnetocaloric effect across the magnetostructural transition of Heusler alloys.

    PubMed

    Cugini, F; Porcari, G; Fabbrici, S; Albertini, F; Solzi, M

    2016-08-13

    We report a complete structural and magneto-thermodynamic characterization of four samples of the Heusler alloy Ni-Co-Mn-Ga-In, characterized by similar compositions, critical temperatures and high inverse magnetocaloric effect across their metamagnetic transformation, but different transition widths. The object of this study is precisely the sharpness of the martensitic transformation, which plays a key role in the effective use of materials and which has its origin in both intrinsic and extrinsic effects. The influence of the transition width on the magnetocaloric properties has been evaluated by exploiting a phenomenological model of the transformation built through geometrical considerations on the entropy versus temperature curves. A clear result is that a large temperature span of the transformation is unfavourable to the magnetocaloric performance of a material, reducing both isothermal entropy change and adiabatic temperature change obtainable in a given magnetic field and increasing the value of the maximum field needed to fully induce the transformation. The model, which is based on standard magnetometric and conventional calorimetric measurements, turns out to be a convenient tool for the determination of the optimum values of transformation temperature span in a trade-off between sheer performance and amplitude of the operating range of a material.This article is part of the themed issue 'Taking the temperature of phase transitions in cool materials'. PMID:27402934

  8. Magnetism and magnetocaloric effects in Ni50Mn35-xCoxIn15 Heusler alloys

    NASA Astrophysics Data System (ADS)

    Pathak, Arjun K.; Dubenko, Igor; Pueblo, Christopher; Stadler, Shane; Ali, Naushad

    2010-05-01

    The effects of the partial substitution of Mn by Co on the magnetic, magnetoelastic, and magnetocaloric properties of Ni50Mn35In15 Heusler alloys were studied using x-ray diffraction, temperature and field dependences of the magnetization [M(T,H)], and strain gauge techniques. It was observed that the presence of ≈3% Co atoms in Mn sites strongly affected the magnetic and magnetoelastic behaviors of Ni50Mn35In15. At H=5 T, a maximum magnetoelastic strain of ≈0.6% was observed for Ni50Mn35In15. It was found that Co substituted into the Mn position does not affect the ΔSM in the vicinity of the second order transitions (SOTs), however ΔSM near the first order transitions (FOTs) it slightly decreases. The net refrigeration capacities in the vicinity of both the FOT and SOT were found to significantly increase by introducing Co into Mn sites. The net refrigeration capacity in the vicinity of the FOT and SOT was found to be 167 J/kg (T=277-293 K) and 229 J/kg (T=305-354 K), respectively, at a magnetizing field of 5 T. These values of the magnetocaloric parameters are comparable to that of the largest values reported for metallic magnets near room temperature.

  9. Influence of the transition width on the magnetocaloric effect across the magnetostructural transition of Heusler alloys.

    PubMed

    Cugini, F; Porcari, G; Fabbrici, S; Albertini, F; Solzi, M

    2016-08-13

    We report a complete structural and magneto-thermodynamic characterization of four samples of the Heusler alloy Ni-Co-Mn-Ga-In, characterized by similar compositions, critical temperatures and high inverse magnetocaloric effect across their metamagnetic transformation, but different transition widths. The object of this study is precisely the sharpness of the martensitic transformation, which plays a key role in the effective use of materials and which has its origin in both intrinsic and extrinsic effects. The influence of the transition width on the magnetocaloric properties has been evaluated by exploiting a phenomenological model of the transformation built through geometrical considerations on the entropy versus temperature curves. A clear result is that a large temperature span of the transformation is unfavourable to the magnetocaloric performance of a material, reducing both isothermal entropy change and adiabatic temperature change obtainable in a given magnetic field and increasing the value of the maximum field needed to fully induce the transformation. The model, which is based on standard magnetometric and conventional calorimetric measurements, turns out to be a convenient tool for the determination of the optimum values of transformation temperature span in a trade-off between sheer performance and amplitude of the operating range of a material.This article is part of the themed issue 'Taking the temperature of phase transitions in cool materials'.

  10. Perpendicular magnetic anisotropy in Fe2Cr1 - xCoxSi Heusler alloy

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Qiu, Jin-Jun; Lu, Hui; Ji, Rong; Han, Gu-Chang; Teo, Kie-Leong

    2014-12-01

    Perpendicular magnetic anisotropy (PMA) was achieved in annealed Fe2Cr1 - xCoxSi (FCCS) Heusler alloys with different Co compositions x. The Co composition is varied to tune the Fermi level in order to achieve both higher spin polarization and better thermal stability. The PMA is thermally stable up to 400 oC for FCCS with x = 0, 0.3, 0.5 and 350 oC for FCCS with x = 0.7, 0.9, 1. The thickness of FCCS films with PMA ranges from 0.6 to 1.2 nm. The annealing temperature and FCCS thickness are found to greatly affect the PMA. The magnetic anisotropy energy density KU is 2.8  ×  106 erg cm-3 for 0.8 nm Fe2CrSi, and decreases as the Co composition x increases, suggesting that the PMA induced at the FCCS/MgO interface is dominated by the contribution of Fe atoms. There is a trade-off between high spin polarization and strong PMA by adjusting the Co composition.

  11. Band-structure-dependent demagnetization in the Heusler alloy Co₂Mn(1-x)FexSi.

    PubMed

    Steil, Daniel; Alebrand, Sabine; Roth, Tobias; Krauss, Michael; Kubota, Takahide; Oogane, Mikihiko; Ando, Yasuo; Schneider, Hans Christian; Aeschlimann, Martin; Cinchetti, Mirko

    2010-11-19

    We investigate the ultrafast demagnetization for two Heusler alloys (Co₂Mn(1-x)FexSi) with a different lineup of the minority band gap and the Fermi level. Even though electronic spin-flip transitions are partially blocked by the band gap in one compound, the respective magnetization dynamics, as measured by the time-resolved Kerr effect, are remarkably similar. Based on a dynamical model that includes momentum and spin-dependent carrier scattering, we show that the magnetization dynamics are dominated by hole spin-flip processes, which are not influenced by the gap.

  12. Electronic and magnetic properties of a full-Heusler alloy Co2CrGe: a first-principles study

    NASA Astrophysics Data System (ADS)

    Rai, D. P.; Shankar, A.; Sandeep; Ghimire, M. P.; Thapa, R. K.

    2013-01-01

    The structural, electronic, and magnetic properties of Co2CrGe, a Heusler alloy, have been evaluated by first-principles density functional theory and compared with the known experimental and theoretical results. Generalized gradient approximation is used for structural study, whereas local spin density approximation is used for electronic calculation. First-principles structure optimizations were done through total energy calculations at 0 K using the full-potential linearized augmented plane wave method as implemented in the WIEN2K code.

  13. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-01

    The structural and magnetic properties of a series of Co2FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co2FeAl films with an ordered L21 structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L21 structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  14. Modelling current-induced magnetization switching in Heusler alloy Co2FeAl-based spin-valve nanopillar

    NASA Astrophysics Data System (ADS)

    Huang, H. B.; Ma, X. Q.; Liu, Z. H.; Zhao, C. P.; Chen, L. Q.

    2014-04-01

    We investigated the current-induced magnetization switching in a Heusler alloy Co2FeAl-based spin-valve nanopillar by using micromagnetic simulations. We demonstrated that the elimination of the intermediate state is originally resulted from the decease of effective magnetic anisotropy constant. The magnetization switching can be achieved at a small current density of 1.0 × 104 A/cm2 by increasing the demagnetization factors of x and y axes. Based on our simulation, we found magnetic anisotropy and demagnetization energies have different contributions to the magnetization switching.

  15. Suppression of the ferromagnetic order in the Heusler alloy Ni50Mn35In15 by hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Salazar Mejía, C.; Mydeen, K.; Naumov, P.; Medvedev, S. A.; Wang, C.; Hanfland, M.; Nayak, A. K.; Schwarz, U.; Felser, C.; Nicklas, M.

    2016-06-01

    We report on the effect of hydrostatic pressure on the magnetic and structural properties of the shape-memory Heusler alloy Ni50Mn35In15. Magnetization and x-ray diffraction experiments were performed at hydrostatic pressures up to 5 GPa using diamond anvil cells. Pressure stabilizes the martensitic phase, shifting the martensitic transition to higher temperatures, and suppresses the ferromagnetic austenitic phase. Above 3 GPa, where the martensitic-transition temperature approaches the Curie temperature in the austenite, the magnetization shows no longer indications of ferromagnetic ordering. We further find an extended temperature region with a mixture of martensite and austenite phases, which directly relates to the magnetic properties.

  16. Half-Metallic Zinc-Blende Compounds

    NASA Astrophysics Data System (ADS)

    Dederichs, Peter H.; Galanakis, Iosif; Mavropoulos, Phivos

    2003-03-01

    Motivated by recent realisation of ferromagnetic zinc-blende CrAs and CrSb compounds by molecular beam epitaxy [1], we present systematic first-principles calculations for ordered zinc-blende compounds of the transition metal elements V, Cr, Mn with the sp elements N, P, As, Sb and S, Se, Te. These compounds exhibit a half-metallic behaviour over a wide range of lattice constants. We discuss the origin and trends of the half-metallic behaviour and the strong similarities to analogous dilute magnetic semiconductors. Based on calculations of the equilibrium lattice constants, we discuss the possibility to grow these half-metallic systems on suitable semiconductor substrates. [1] H. Akinaga, T. Manago, and M. Shirai, Jpn. J. Appl. Phys. 39, L1118 (2000).

  17. Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Huang, Ting; Cheng, Xiao-min; Guan, Xia-wei; Miao, Xiang-shui

    2016-02-01

    The electronic properties of the typical Heusler compound Co2FeAl with chalcogenide element doping were investigated by means of first principles calculations within the local spin-density approximation (LSDA) + Hubbard U parameter (U). The calculations indicate that, only when 25% of the number of Al atoms is substituted by the chalcogenide element, the chalcogenide element-doped Co2FeAl shows the half metallic properties. The Fermi energy ( E F) of the 25% chalcogenide element-doped Co2FeAl is located in the middle of the gap of the minority states instead of around the top of the valence band as in Co2FeAl. Moreover, the band gap of 25% Te-doped Co2FeAl (0.80 eV) is wider than that of Co2FeAl (0.74 eV). These improved electronic structures will make 25% chalcogenide element-doped Co2FeAl more stable against temperature variation. Therefore, the expected excellent stability of the 25% chalcogenide element-doped Co2FeAl make it more suitable for spintronic applications than Co2FeAl.

  18. Electrical properties of ferromagnetic Ni{sub 2}MnGa and Co{sub 2}CrGa Heusler alloys

    SciTech Connect

    Kourov, N. I. Marchenkov, V. V.; Pushin, V. G.; Belozerova, K. A.

    2013-07-15

    The electrical properties of ferromagnetic Ni{sub 2}MnGa and Co{sub 2}CrGa Heusler alloys are measured in the temperature range 4-900 K. The effect of the energy gap near the Fermi level in the electronic spectrum on the behavior of electrical resistivity and absolute differential thermopower is discussed.

  19. Effect of Off-Stoichiometry on the Thermoelectric Properties of Heusler-Type Fe2VAl Sintered Alloys

    NASA Astrophysics Data System (ADS)

    Mikami, M.; Inukai, M.; Miyazaki, H.; Nishino, Y.

    2016-03-01

    Heusler-type Fe2V1- x Al1+ x sintered alloys with micrometer-sized grains were fabricated by the powder metallurgical process using mechanical alloying and pulse-current sintering. Both positive (˜90 μV/K) and negative (˜-140 μV/K) Seebeck coefficients were obtained for the composition ranges of x > 0 and x < 0, respectively, resulting from a Fermi level shift caused by the change in the valence electron concentration. The electrical resistivity was reduced by the carrier doping effect, especially at lower temperatures, resulting in an increased thermoelectric power factor of 2.8 mW/m-K2 for the p-type alloy with x = 0.06 and 5.0 mW/m-K2 for the n-type alloy with x = -0.06. In addition, the lattice thermal conductivity decreased with | x| because of phonon scattering at crystal lattice defects induced by the off-stoichiometry. Consequently, the thermoelectric figure of merit, ZT, was enhanced and reached 0.07 for p-type alloys with 0.06 < x < 0.15 and 0.18 for n-type alloys with -0.15 < x < -0.10 around 500 K. The ZT value was especially enhanced at higher temperatures by the off-stoichiometric composition control, which could extend the range of heat source temperatures for thermoelectric power generation applications using this alloy.

  20. Consecutive magnetic and magnetocaloric transitions in herringbone nanostructured Heusler Mn50Ni41Sn9 alloy.

    PubMed

    Prasanna, A A; Ram, S; Fecht, H J

    2013-08-01

    A herringbone nanostructured Mn-rich Heusler Mn50Ni50-Sndelta (8 - 9) alloy exhibits tailored magnetocaloric properties in the martensite and ferro <-> paramagnetic transitions concur in a narrow temperature window. In a Sn --> Ni substitution 8 - 9, the martensite (M) <-- austenite (A) transition up-lifts adequately well above the room temperature - 310.5 K in the DSC thermogram and magnetization scanned with temperature. A noninterrupted heating following a cooling in DSC at a given rate gives a smaller enthalpy change deltaH(M <-- A) - deltaH(M --> A approximately equal to 282 mJ/g (deltaC(P)(M <-- A) - deltaC(P)(M --> A) approximately equal to 0.025 mJ/g-K in the heat capacity), i.e., the M <-> A transition process lacks a complete reversibility. Warming a zero-field cooled sample retains lower magnetization (sigma) at low fields B, e.g., by 58% over the field cooled value at 5 mT, wherein merely low field magnetic susceptibility imparts the magnetization process. A reversible thermal hysteresis thus the transition traces in cooling and heating. The field diminishes difference in two sigma-values progressively, e.g., only - 12% lasts at 5 T. The two curves bifurcate below 160 K (B-5 mT) and the gap grows exponentially over lower temperatures before sigma(M <-- A) gets steady near 60 K in a superparamagnetic (SPM) behavior. The SPM feature (follows the Langevin model) below a paramagnetic regime begins (> or = 250 K) before a ferromagnetic A-state lines-up the successive transitions. Temperature and frequency dependence ac and dc susceptibilities describe the surface spins dynamics.

  1. Consecutive magnetic and magnetocaloric transitions in herringbone nanostructured Heusler Mn50Ni41Sn9 alloy.

    PubMed

    Prasanna, A A; Ram, S; Fecht, H J

    2013-08-01

    A herringbone nanostructured Mn-rich Heusler Mn50Ni50-Sndelta (8 - 9) alloy exhibits tailored magnetocaloric properties in the martensite and ferro <-> paramagnetic transitions concur in a narrow temperature window. In a Sn --> Ni substitution 8 - 9, the martensite (M) <-- austenite (A) transition up-lifts adequately well above the room temperature - 310.5 K in the DSC thermogram and magnetization scanned with temperature. A noninterrupted heating following a cooling in DSC at a given rate gives a smaller enthalpy change deltaH(M <-- A) - deltaH(M --> A approximately equal to 282 mJ/g (deltaC(P)(M <-- A) - deltaC(P)(M --> A) approximately equal to 0.025 mJ/g-K in the heat capacity), i.e., the M <-> A transition process lacks a complete reversibility. Warming a zero-field cooled sample retains lower magnetization (sigma) at low fields B, e.g., by 58% over the field cooled value at 5 mT, wherein merely low field magnetic susceptibility imparts the magnetization process. A reversible thermal hysteresis thus the transition traces in cooling and heating. The field diminishes difference in two sigma-values progressively, e.g., only - 12% lasts at 5 T. The two curves bifurcate below 160 K (B-5 mT) and the gap grows exponentially over lower temperatures before sigma(M <-- A) gets steady near 60 K in a superparamagnetic (SPM) behavior. The SPM feature (follows the Langevin model) below a paramagnetic regime begins (> or = 250 K) before a ferromagnetic A-state lines-up the successive transitions. Temperature and frequency dependence ac and dc susceptibilities describe the surface spins dynamics. PMID:23882763

  2. Enhanced thermoelectric performance by the combination of alloying and doping in TiCoSb-based half-Heusler compounds

    NASA Astrophysics Data System (ADS)

    Qiu, Pengfei; Huang, Xiangyang; Chen, Xihong; Chen, Lidong

    2009-11-01

    TiCoSb-based half-Heusler compounds have been prepared and their thermoelectric properties are studied. By isoelectronic alloying on the Ti site with Zr, although both the thermal conductivity and electrical conductivity are suppressed, the Seebeck coefficient is improved remarkably with a highest value of -420 μV/K for Ti0.5Zr0.5CoSb at 600 K, which provides a larger space to optimize the thermoelectric performance. To further improve the performance of the TiCoSb-based isoelectronic alloy, doping Ni on the Co site was explored. It is found that small amount of Ni doping results in a great increase in the electrical conductivity, still with a relative large Seebeck coefficient. Ti0.6Hf0.4Co0.87Ni0.13Sb sample exhibits a peak power factor of 23.4μW/cmK2, which is the highest value for n-type TiCoSb-based half-Heusler compounds reported so far. As a result, a maximum dimensionless figure of merit of 0.70 has been achieved at 900 K for Ti0.6Hf0.4Co0.87Ni0.13Sb.

  3. Rotatable magnetic anisotropy in Si/SiO2/(Co2Fe)(x)Ge(1-x) Heusler alloy films.

    PubMed

    Ryabchenko, S M; Kalita, V M; Kulik, M M; Lozenko, A F; Nevdacha, V V; Pogorily, A N; Kravets, A F; Podyalovskiy, D Y; Vovk, A Ya; Borges, R P; Godinho, M; Korenivski, V

    2013-10-16

    Polycrystalline (Co2Fe)(x)Ge(1-x) Heusler alloy films are fabricated by sputtering on amorphous substrates and shown to possess three types of magnetic anisotropy. The nearly stoichiometric composition of x = 50 m.f.% shows a rectangular hysteresis loop and isotropic coercive and ferromagnetic resonance fields when the film is field-magnetized along any in-plane direction, thus predominantly possessing rotatable in-plane magnetic anisotropy. Higher-x compositions show evidence of two- and fourfold in-plane anisotropy superposed on the rotatable one. A qualitative model of the observed anisotropic magnetic properties is proposed. The model explains the rotatable anisotropy by taking into account dry friction for the in-plane rotation of the magnetization direction in a fine-grained polycrystalline film with the magnetic grain size smaller than the correlation length of the inter-grain exchange interaction. The observed two- and fourfold magnetic anisotropy contributions are attributed to partial texturing of the fine-grained films, even though the films are grown on amorphous SiO2 substrates. These results should be valuable for understanding and controlling the magnetic behaviour of highly spin-polarized Heusler alloy films used in various magnetic nanodevices.

  4. Magnetostructural martensitic transformations with large volume changes and magneto-strains in all-d-metal Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wei, Z. Y.; Liu, E. K.; Li, Y.; Han, X. L.; Du, Z. W.; Luo, H. Z.; Liu, G. D.; Xi, X. K.; Zhang, H. W.; Wang, W. H.; Wu, G. H.

    2016-08-01

    The all-d-metal Mn2-based Heusler ferromagnetic shape memory alloys Mn50Ni40-xCoxTi10 (x = 8 and 9.5) are realized. With a generic comparison between d-metal Ti and main-group elements in lowering the transformation temperature, the magnetostructural martensitic transformations are established by further introducing Co to produce local ferromagnetic Mn-Co-Mn configurations. A 5-fold modulation and (3, -2) stacking of [00 10] of martensite are determined by X-ray diffraction and HRTEM analysis. Based on the transformation, a large magneto-strain of 6900 ppm and a large volume change of -2.54% are observed in polycrystalline samples, which makes the all-d-metal magnetic martensitic alloys of interest for magnetic/pressure multi-field driven applications.

  5. First principle study of structural, electronic and magnetic properties of half-Heusler IrCrZ (Z=Ge, As, sn and sb) compounds

    NASA Astrophysics Data System (ADS)

    Allaf Behbahani, Marzieh; Moradi, Mahmood; Rostami, Mohammad; Davatolhagh, Saeed

    2016-05-01

    First-principle calculations based on the density functional theory for new half-Heusler IrCrZ (Z=Ge, As, Sn and Sb) alloys are performed. It is found that the half-Heusler IrCrGe and IrCrSn compounds have an antiferromagnetic ground state while the ferromagnetic state is more stable than the antiferromagnetic and non-magnetic states for both IrCrAs and IrCrSb compounds. IrCrAs and IrCrSb exhibit half-metallic property with integer magnetic moments of 2.00 μB per formula unit and half-metallic gaps of 0.28 and 0.27 eV at their equilibrium volume, respectively. In addition, the density of states (DOSs) and band structures of IrCrAs and IrCrSb compounds are studied and the origin of their half-metallic gaps are discussed in detail. The estimation of Curie temperatures of IrCrAs and IrCrSb compounds is performed within the mean field approximation (MFA). The Curie temperatures of IrCrAs and IrCrSb are estimated to be 1083 and 1470 K, respectively. The stability of the half-metallicity in IrCrAs and IrCrSb compounds with the variation of lattice constant are also investigated.

  6. Pressure dependence of half metallic behavior of Co{sub 2}VZ (Z=Si, Ge)-An ab initio Study

    SciTech Connect

    Seema, K. Kumar, Ranjan

    2014-04-24

    The structural, electronic and magnetic properties of Co-based Heusler compounds Co{sub 2}VZ (Z=Si, Ge) under pressure are studied using first-principles density functional theory. The total magnetic moment decreases on compression. Under application of external pressure, the valence band and conduction band are shifted downward which leads to modification of electronic structure. True half metallic to nearly half metallic transition is observed at 30 GPa, 50 GPa for Co{sub 2}VSi and Co{sub 2}VGe respectively. Around 100 GPa, Co{sub 2}VGe shows complete metallic behavior. The half metal to metal transition is accompanied by quenching of magnetic moment.

  7. Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

    SciTech Connect

    Zou, Minmin; Li, Jing-Feng; Kita, Takuji

    2013-02-15

    Fine-grained Ti-doped FeVSb half-Heusler alloys were synthesized by combining mechanical alloying and spark plasma sintering and their thermoelectric properties were investigated with an emphasis on the influences of Ti doping and phase purity. It was found that substituting V with Ti can change the electrical transport behavior from n-type to p-type due to one less valence electron of Ti than V, and the sample with nominal composition FeV{sub 0.8}Ti{sub 0.4}Sb exhibits the largest Seebeck coefficient and the maximum power factor. By optimizing the sintering temperature and applying annealing treatment, the power factor is significantly improved and the thermal conductivity is reduced simultaneously, resulting in a ZT value of 0.43 at 500 Degree-Sign C, which is relatively high as for p-type half-Heusler alloys containing earth-abundant elements. - Graphical abstract: Fine-grained Ti-doped FeVSb alloys were prepared by the MA-SPS method. The maximum ZT value reaches 0.43 at 500 Degree-Sign C, which is relatively high for p-type half-Heusler alloys. Highlights: Black-Right-Pointing-Pointer Ti-doped FeVSb half-Heusler alloys were synthesized by combining MA and SPS. Black-Right-Pointing-Pointer Substituting V with Ti changes the electrical behavior from n-type to p-type. Black-Right-Pointing-Pointer Thermoelectric properties are improved by optimizing sintering temperature. Black-Right-Pointing-Pointer Thermoelectric properties are further improved by applying annealing treatment. Black-Right-Pointing-Pointer A high ZT value of 0.43 is obtained at 500 Degree-Sign C for p-type Ti-doped FeVSb alloys.

  8. Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

    NASA Astrophysics Data System (ADS)

    Bharat Kumary, Tangudu; Ghosh, Bahniman; Awadhiya, Bhaskar; Verma, Ankit Kumar

    2016-01-01

    We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

  9. Martensitic transition, magnetic, magnetocaloric and exchange bias properties of Fe-substituted Mn-Ni-Sn Heusler alloys

    NASA Astrophysics Data System (ADS)

    Sharma, Jyoti; Suresh, K. G.

    2016-12-01

    In this report, effect of Fe substitution on martensitic transition, magnetic, magnetocaloric and exchange bias (EB) properties of Mn50Ni40-xFexSn10 (x=0, 0.5, 1, 1.5, 2 and 3) Heusler alloys series has been investigated systematically. Fe substitution has been found to affect the ferromagnetic/antiferromagnetic interactions significantly in both the martensite and austenite phases. Martensitic transition temperature decreases with increasing Fe content, which is attributed to the decrease in number of average valence electrons per atom (e/a ratio) of these alloys. Large magnetic entropy change (ΔSM) and refrigerant capacity (RC) have been observed in these alloys, as a maximum ΔSM of ~12.6 J/kg. K is observed for composition x=0.5. Present alloys have also been found to show large exchange bias properties, as maximum exchange bias fields (HEB) of 890 Oe and 810 Oe are observed for x=0 and 0.5, respectively at 5 K. Composition and temperature dependencies of EB are associated with the change in exchange anisotropy at interfaces of competing magnetic phases. Study of minor loop and training effect also corroborates with the presence of EB in these alloys.

  10. Galvanomagnetic properties of Fe{sub 2}YZ (Y = Ti, V, Cr, Mn, Fe, Ni; Z = Al, Si) heusler alloys

    SciTech Connect

    Kourov, N. I. Marchenkov, V. V.; Belozerova, K. A.; Weber, H. W.

    2015-11-15

    The Hall effect and the magnetoresistance of Fe{sub 2}YZ Heusler alloys, where Y = Ti, V, Cr, Mn, Fe, and Ni, are the 3d transition metals and Z = Al and Si are the s, p elements of the third period of the periodic table, are studied at T = 4.2 K in magnetic fields H ≤ 100 kOe. It is shown that, in the high-field limit (H > 10 kOe), the value and the sign of the normal (R{sub 0}) and anomalous (R{sub s}) Hall coefficients change anomalously during transition from paramagnetic (Y = Ti, V) to ferromagnetic (Y = Cr, Mn, Fe, Ni) alloys. These coefficients have different signs for all alloys. Constant R{sub s} in the ferromagnetic alloys is positive, proportional to the residual resistivity ratio (R{sub s} ∝ ρ{sub 0}{sup 3.1}), and inversely proportional to spontaneous magnetization. The magnetoresistance of the alloys is a few percent and has a negative sign. A positive addition to transverse magnetoresistance is only detected in high magnetic fields, H > 10 kOe.

  11. Galvanomagnetic properties of Fe2YZ (Y = Ti, V, Cr, Mn, Fe, Ni; Z = Al, Si) heusler alloys

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Marchenkov, V. V.; Belozerova, K. A.; Weber, H. W.

    2015-11-01

    The Hall effect and the magnetoresistance of Fe2YZ Heusler alloys, where Y = Ti, V, Cr, Mn, Fe, and Ni, are the 3 d transition metals and Z = Al and Si are the s, p elements of the third period of the periodic table, are studied at T = 4.2 K in magnetic fields H ≤ 100 kOe. It is shown that, in the high-field limit ( H > 10 kOe), the value and the sign of the normal ( R 0) and anomalous ( R s ) Hall coefficients change anomalously during transition from paramagnetic (Y = Ti, V) to ferromagnetic (Y = Cr, Mn, Fe, Ni) alloys. These coefficients have different signs for all alloys. Constant R s in the ferromagnetic alloys is positive, proportional to the residual resistivity ratio ( R s ∝ ρ 0 3.1 ), and inversely proportional to spontaneous magnetization. The magnetoresistance of the alloys is a few percent and has a negative sign. A positive addition to transverse magnetoresistance is only detected in high magnetic fields, H > 10 kOe.

  12. Half-metal CPP GMR sensor for magnetic recording

    NASA Astrophysics Data System (ADS)

    Diao, Z.; Chapline, M.; Zheng, Y.; Kaiser, C.; Ghosh Roy, A.; Chien, C. J.; Shang, C.; Ding, Y.; Yang, C.; Mauri, D.; Leng, Q.; Pakala, M.; Oogane, M.; Ando, Y.

    2014-04-01

    Current-perpendicular-to-plane (CPP) giant magnetoresistance in magnetic CoFeMnSi Heusler alloy based spin valves and its potential application for high areal density recording are investigated, given that film stack design and crystalline structure matching during film growth are considered. Modeling of electron transport in spin valves predicts the CPP GMR of up to 130% and 25% in pseudo and antiferromagnet pinned spin valves at large bulk diffusive scattering asymmetry in Heusler alloy layers. Experimentally, the testing structures of pseudo spin valves, which have the L21 ordered Huesler alloy layers grown on single crystal MgO substrates, were built and demonstrate the CPP GMR of 55% or larger with ΔRA≥27.5 mΩ μm2. CPP GMR reader sensors were fabricated based on antiferromagnet pinned spin valves using the same Huesler alloy materials albeit on AlTiC wafers, with narrow track widths of down to 35 nm. The CPP GMR obtained is up to 13% (18%, ΔRA=9.0 mΩ μm2 after correction of current distribution in device). Reader test results show that the low frequency track averaged output amplitude is 3.14 mV with the electrical SNR=28 dB. These read heads have the transition width of readback waveform T50 of ~22 nm and the magnetic read track width of 35.6 nm. The obtained on-track bit error rate is close to 10-3 decade at a linear density of 1800 KFCI, potentially realizing a magnetic recording with an areal density of up to 800 Gb/in2.

  13. EDITORIAL: Cluster issue on Heusler compounds and devices Cluster issue on Heusler compounds and devices

    NASA Astrophysics Data System (ADS)

    Felser, Claudia; Hillebrands, Burkard

    2009-04-01

    This is the third cluster issue of Journal Physics D: Applied Physics devoted to half-metallic Heusler compounds and devices utilizing this class of materials. Heusler compounds are named after Fritz Heusler, the owner of a German copper mine, the Isabellenhütte, who discovered this class of materials in 1903 [1]. He synthesized mixtures of Cu2Mn alloys with various main group metals Z = Al, Si, Sn, Sb, which became ferromagnetic despite all constituents being non-magnetic. The recent success story of Heusler compounds began in 1983 with the discovery of the half-metallic electronic structure in NiMnSb [2] and Co2MnZ [3], making these and similar materials, in particular PtMnSb, also useful for magneto-optical data storage media applications due to their high Kerr rotation. The real breakthrough, however, came in 2000 with the observation of a large magnetoresistance effect in Co2Cr0.6Fe0.4Al [4]. The Co2YZ (Y = Ti, Cr, Mn, Fe) compounds are a special class of materials, which follow the Slater-Pauling rule [5], and most of them are half-metallic bulk materials. The electronic structure of Heusler compounds is well understood [6] and Curie temperatures up to 1100 K have been observed [7]. In their contribution to this cluster issue, Thoene et al predict that still higher Curie temperatures can be achieved. A breakthrough from the viewpoint of materials design is the synthesis of nanoparticles of Heusler compounds as reported in the contribution by Basit et al. Nano-sized half- metallic ferromagnets will open new directions for spintronic applications. The challenge, however, is still to produce spintronic devices with well defined interfaces to take advantage of the half-metallicity of the electrodes. Several groups have succeeded in producing excellent tunnel junctions with high magnetoresistance effects at low temperatures and decent values at room temperature [8-11]. Spin-dependent tunnelling characteristics of fully epitaxial magnetic tunnel junctions with a

  14. Growth temperature dependent structural and magnetic properties of epitaxial Co{sub 2}FeAl Heusler alloy films

    SciTech Connect

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-21

    The structural and magnetic properties of a series of Co{sub 2}FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co{sub 2}FeAl films with an ordered L{sub 21} structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L{sub 21} structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  15. Effect of compositional and antisite disorder on the electronic and magnetic properties of Ni-Mn-In Heusler alloy.

    PubMed

    Borgohain, Parijat; Sahariah, Munima B

    2015-05-01

    A systematic study has been done on the electronic and magnetic properties of metamagnetic Ni-Mn-In Heusler alloy with compositional and structural (anti-site) disorder at high temperature austenite phase. The electronic structure calculation shows an increasing Mn-Ni hybridization which occurs due to the decrease in Mn-Ni bond length as the system approaches martensite phase. The results obtained from magnetic moment calculations follow a similar trend to the previous experimental and theoretical results. The magnetic coupling parameters, Jij, obtained from the ab initio calculation explains the presence of competing ferromagnetic (FM) and antiferromagnetic (AFM) interactions in the system and the dominating AFM interactions nearer to the martensite phase.

  16. Pulsed high-magnetic-field experiments: New insights into the magnetocaloric effect in Ni-Mn-In Heusler alloys

    SciTech Connect

    Salazar Mejía, C. Nayak, A. K.; Felser, C.; Nicklas, M.; Ghorbani Zavareh, M.; Wosnitza, J.; Skourski, Y.

    2015-05-07

    The present pulsed high-magnetic-field study on Ni{sub 50}Mn{sub 35}In{sub 15} gives an extra insight into the thermodynamics of the martensitic transformation in Heusler shape-memory alloys. The transformation-entropy change, ΔS, was estimated from field-dependent magnetization experiments in pulsed high magnetic fields and by heat-capacity measurements in static fields. We found a decrease of ΔS with decreasing temperature. This behavior can be understood by considering the different signs of the lattice and magnetic contributions to the total entropy. Our results further imply that the magnetocaloric effect will decrease with decreasing temperature and, furthermore, the martensitic transition is not induced anymore by changing the temperature in high magnetic fields.

  17. Magnetic and Magnetocaloric Properties in Non-Stoichiometric Gallium Deficient Ni2MnGa1-x Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Madden, Alexander; Corrigan, Mollie; Barton, Linda

    Magnetic data show that off-stoichiometric gallium deficient Heusler alloys of the form Ni2MnGa1-x have structural martensite transition temperatures that increase strongly with x, while their ferromagnetic Curie temperatures remain nearly unchanged. The martensite transition approaches room temperature for x = 0 . 13 . Samples were prepared by rf induction heating. The influence of quenching and post annealing on magnetic properties, as well as structural grain sizes and magnetic domain structure, were investigated. Since the first order structural phase transition can be adjusted to any convenient temperature, these materials offer intriguing possibilities as magnetic refrigerants. Magnetocaloric properties were investigated by direct measurement of ΔT with the application of field ΔH .

  18. Structural and magnetic properties of ion beam sputtered Co2FeAl full Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet; Svedlindh, Peter

    2016-05-01

    Co2FeAl full Heusler alloy thin films grown at different temperatures on Si(100) substrates using ion beam sputtering system have been investigated. X-ray diffraction (XRD) patterns revealed the A2 disordered phase in these films. The deduced lattice parameter slightly increases with increase in the growth temperature. The saturation magnetization it is found to increase with increase in growth temperature. The magnetic anisotropy has been studied using angle dependent magneto-optical Kerr effect. In the room temperature deposited film, the combination of cubic and uniaxial anisotropy have been observed with weak in-plane uniaxial anisotropy which increases with growth temperature. The uniaxial anisotropy is attributed to the anisotropic interfacial bonding in these Co2FeAl /Si(100) heterostructures.

  19. Pulsed high-magnetic-field experiments: New insights into the magnetocaloric effect in Ni-Mn-In Heusler alloys

    NASA Astrophysics Data System (ADS)

    Salazar Mejía, C.; Ghorbani Zavareh, M.; Nayak, A. K.; Skourski, Y.; Wosnitza, J.; Felser, C.; Nicklas, M.

    2015-05-01

    The present pulsed high-magnetic-field study on Ni50Mn35In15 gives an extra insight into the thermodynamics of the martensitic transformation in Heusler shape-memory alloys. The transformation-entropy change, ΔS, was estimated from field-dependent magnetization experiments in pulsed high magnetic fields and by heat-capacity measurements in static fields. We found a decrease of ΔS with decreasing temperature. This behavior can be understood by considering the different signs of the lattice and magnetic contributions to the total entropy. Our results further imply that the magnetocaloric effect will decrease with decreasing temperature and, furthermore, the martensitic transition is not induced anymore by changing the temperature in high magnetic fields.

  20. Magnetic Tunnel Junctions with Perpendicular Anisotropy Using a Co2FeAl Full-Heusler Alloy

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Hayashi, Masamitsu; Mitani, Seiji; Inomata, Koichiro

    2012-06-01

    We fabricated perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with an ultrathin Co2FeAl (CFA) full-Heusler alloy electrode having large interface magnetic anisotropy of CFA/MgO. An out-of-plane tunnel magnetoresistance (TMR) ratio of 53% at room temperature was observed in CFA/MgO/Co20Fe60B20 p-MTJs. By inserting a 0.1-nm-thick Fe (Co50Fe50) layer between the MgO and Co20Fe60B20 layers, The TMR ratio was significantly enhanced to 91% (82%) due to the improved interface. The bias voltage dependence of differential conductance did not clearly show coherent tunneling characteristics for ultrathin CFA-MTJs, suggesting that a higher TMR ratio may be achieved by improving the B2 ordering of CFA and/or interface structure.

  1. B2+L2{sub 1} ordering in Co{sub 2}MnAl Heusler alloy

    SciTech Connect

    Vinesh, A.; Sudheesh, V. D.; Lakshmi, N.; Venugopalan, K.

    2014-04-24

    Magnetic and structural properties of B2 ordered Co{sub 2}MnAl Heusler alloy have been studied by X-ray diffraction and DC magnetization techniques. X-ray diffractogram shows the structure is of B2 type with preferential site disorder between Mn and Al atoms and presence of a small L2{sub 1} phase. DC magnetization studies at low temperature establish that the antiferromagnetic nature arises mainly due to the antiparallel coupling of spin moments of 3d electrons of Co with Mn atoms. Curie temperature (T{sub c}) is 733 K which is close to T{sub c} of the L2{sub 1} phase.

  2. Anomalous transport properties of N i2M n1 -xC rxGa Heusler alloys at the martensite-austenite phase transition

    NASA Astrophysics Data System (ADS)

    Khan, Mahmud; Brock, Jeffrey; Sugerman, Ian

    2016-02-01

    The martensite-austenite phase transition in a series of N i2M n1 -xC rxGa Heusler alloys has been investigated by x-ray diffraction, dc magnetization, and electrical resistivity measurements. With increasing Cr concentration, the martensitic phase transformation shifts to higher temperature while the ferromagnetic transition shifts to lower temperature. For x <0.5 , the martensitic transformation occurs in a ferromagnetic state, while for x >0.5 , the transition occurs in a paramagnetic state. The Cr doping results in a reconstruction of the electronic structure, particularly, near the Fermi level, which is indicated in the resistivity data where a systematic jumplike anomaly is observed in the vicinity of the martensite-austenite phase transformation. With increasing Cr concentration, the magnitude of the jump in resistivity changes dramatically from less than 1 % to nearly 18 % The results are discussed considering the fundamental interactions in Heusler alloys.

  3. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interfaces

    NASA Astrophysics Data System (ADS)

    Takamura, Yota; Suzuki, Takahiro; Fujino, Yorinobu; Nakagawa, Shigeki

    2014-05-01

    A 100-nm-thick L21-ordered full-Heusler Co2FeSi (CFS) alloy film was fabricated using the facing targets sputtering (FTS) method at a substrate temperature TS of 300 °C. The degrees of L21- and B2-order for the film were 37% and 96%, respectively. In addition, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by the magnetic anisotropy of MgO-interfaces were also successfully fabricated using the FTS method. The CFS/MgO stacked layers exhibited PMA when the CFS layer had a thickness of 0.6 nm ≤ dCFS ≤ 1.0 nm. The PMA in these structures resulted from the CFS/MgO interfacial perpendicular magnetic anisotropy.

  4. High-field magnetization of heusler alloys Fe2 XY ( X = Ti, V, Cr, Mn, Fe, Co, Ni; Y = Al, Si)

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Marchenkov, V. V.; Korolev, A. V.; Belozerova, K. A.; Weber, H. W.

    2015-10-01

    The magnetization curves of ferromagnetic Heusler alloys Fe2 XY (where X = Ti, V, Cr, Mn, Fe, Co, Ni are transition 3 d elements and Y = Al, Si are the s and p elements of the third period of the Periodic Table) have been measured at T = 4.2 K in the field range H ≤ 70 kOe. It has been shown that the high-field ( H ≥ 20 kOe) magnetization is described within the Stoner model.

  5. First-Principles Study on the Structural, Electronic, Magnetic and Thermodynamic Properties of Full Heusler Alloys Co2VZ (Z = Al, Ga)

    NASA Astrophysics Data System (ADS)

    Bentouaf, Ali; Hassan, Fouad H.; Reshak, Ali H.; Aïssa, Brahim

    2016-08-01

    We report on the investigation of the structural and physical properties of the Co2VZ (Z = Al, Ga) Heusler alloys, with L21 structure, through first-principles calculations involving the full potential linearized augmented plane-wave method within density functional theory. These physical properties mainly revolve around the electronic, magnetic and thermodynamic properties. By using the Perdew-Burke-Ernzerhof generalized gradient approximation, the calculated lattice constants and spin magnetic moments were found to be in good agreement with the experimental data. Furthermore, the thermal effects using the quasi-harmonic Debye model have been investigated in depth while taking into account the lattice vibrations, the temperature and the pressure effects on the structural parameters. The heat capacities, the thermal expansion coefficient and the Debye temperatures have also been determined from the non-equilibrium Gibbs functions. An application of the atom in molecule theory is presented and discussed in order to analyze the bonding nature of the Heusler alloys. The focus is on the mixing of the metallic and covalent behavior of Co2VZ (Z = Al, Ga) Heusler alloys.

  6. Half-metallic superconducting triplet spin valve

    NASA Astrophysics Data System (ADS)

    Halterman, Klaus; Alidoust, Mohammad

    2016-08-01

    We theoretically study a finite-size S F1N F2 spin valve, where a normal metal (N ) insert separates a thin standard ferromagnet (F1) and a thick half-metallic ferromagnet (F2). For sufficiently thin superconductor (S ) widths close to the coherence length ξ0, we find that changes to the relative magnetization orientations in the ferromagnets can result in substantial variations in the transition temperature Tc, consistent with experimental results [Singh et al., Phys. Rev. X 5, 021019 (2015), 10.1103/PhysRevX.5.021019]. Our results demonstrate that, in good agreement with the experiment, the variations are largest in the case where F2 is in a half-metallic phase and thus supports only one spin direction. To pinpoint the origins of this strong spin-valve effect, both the equal-spin f1 and opposite-spin f0 triplet correlations are calculated using a self-consistent microscopic technique. We find that when the magnetization in F1 is tilted slightly out of plane, the f1 component can be the dominant triplet component in the superconductor. The coupling between the two ferromagnets is discussed in terms of the underlying spin currents present in the system. We go further and show that the zero-energy peaks of the local density of states probed on the S side of the valve can be another signature of the presence of superconducting triplet correlations. Our findings reveal that for sufficiently thin S layers, the zero-energy peak at the S side can be larger than its counterpart in the F2 side.

  7. Efficient spin injector scheme based on Heusler materials.

    PubMed

    Chadov, Stanislav; Graf, Tanja; Chadova, Kristina; Dai, Xuefang; Casper, Frederick; Fecher, Gerhard H; Felser, Claudia

    2011-07-22

    We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.

  8. Over 50% reduction in the formation energy of Co-based Heusler alloy films by two-dimensional crystallisation

    SciTech Connect

    Sagar, James; Fleet, Luke R.; Walsh, Michael; Whear, Oliver; Huminiuc, Teodor; Lari, Leonardo; Boyes, Edward D.; Vick, Andrew; Hirohata, Atsufumi

    2014-07-21

    Crystalline formation of high magnetic-moment thin films through low-temperature annealing processes compatible with current semiconductor technologies is crucial for the development of next generation devices, which can utilise the spin degree of freedom. Utilising in-situ aberration corrected electron microscopy, we report a 235 °C crystallisation process for a Co-based ternary Heusler-alloy film whose initial nucleation is initiated by as few as 27 unit cells. The crystallisation occurs preferentially in the 〈111〉 crystalline directions via a two-dimensional (2D) layer-by-layer growth mode; resulting in grains with [110] surface normal and [111] plane facets. This growth process was found to reduce the crystallisation energy by more than 50% when compared to bulk samples whilst still leading to the growth of highly ordered grains expected to give a high degree of spin-polarisation. Our findings suggest that the 2D layer-by-layer growth minimises the crystallisation energy allowing for the possible implementation of highly spin-polarised alloy films into current chip and memory technologies.

  9. First-principles study of martensitic transformation and magnetic properties of carbon doped Ni-Mn-Sn Heusler alloys

    NASA Astrophysics Data System (ADS)

    Xiao, Haibo; Yang, Changping; Wang, Ruilong; Xu, Linfang; Liu, Guozhen; Marchenkov, V. V.

    2016-10-01

    The magnetic properties, structural stabilities and martensitic transformation of carbon doped Ni-Mn-Sn Heusler alloys are investigated by means of ab initio calculations in framework of the density functional theory. The results of calculations have shown that the martensitic transformation can be realized in all series of carbon doped Ni2Mn1.5Sn0.5 - xCx alloys with tetragonal ratio of 1.34, 1.40,1.42 and 1.44, respectively for x = 0.125 , 0.25 , 0.375 and 0.5. The DOS peak at the Fermi level almost disappearing in the tetragonal phase near the Fermi level is the evidence of triggering martensitic transformation which is due to the structural Jahn-Teller effect. We have also found that the difference between the austenitic and martensitic phases increases with increasing carbon content, which implies an enhancement of the martensitic phase transition temperature (TM). Besides, the electron density difference shows the enhancement of bonding between Mn and carbon atoms with the distortion taken place.

  10. Ab initio calculations and synthesis of the off-stoichiometric half-Heusler phase Ni{sub 1-x}Mn{sub 1+x}Sb

    SciTech Connect

    Ekholm, M.; Larsson, P.; Alling, B.; Helmersson, U.; Abrikosov, I. A.

    2010-11-15

    We perform a combined theoretical and experimental study of the phase stability and magnetism of the off-stoichiometric Ni{sub 1-x}Mn{sub 1+x}Sb in the half-Heusler crystal phase. Our work is motivated by the need for strategies to engineer the magnetism of potentially half-metallic materials, such as NiMnSb, for improved performance at elevated temperatures. By means of ab initio calculations we investigate Ni{sub 1-x}Mn{sub 1+x}Sb over the whole composition range 0{<=}x{<=}1 of Ni replacing Mn and show that at relevant temperatures, the half-Heusler phase should be thermodynamically stable up to at least x=0.20 with respect to the competing C38 structure of Mn{sub 2}Sb. Furthermore we find that half-Heusler Ni{sub 1-x}Mn{sub 1+x}Sb retains half-metallic band structure over the whole concentration range and that the magnetic moments of substitutional Mn{sub Ni} atoms display magnetic exchange interactions an order of magnitude larger than the Ni-Mn interaction in NiMnSb. We also demonstrate experimentally that the alloys indeed can be created by synthesizing off-stoichiometric Ni{sub 1-x}Mn{sub 1+x}Sb films on MgO substrates by means of magnetron sputtering.

  11. Thermodynamic stability, magnetism and half metallicity of Mn2CoAl/GaAs(0 0 1) interface

    NASA Astrophysics Data System (ADS)

    Feng, Yu; Zhou, Ting; Chen, Xiaorui; Yuan, Hongkuan; Chen, Hong

    2015-07-01

    Interface properties of the heterojunction which is composed of the inverse Heusler alloy Mn2 CoAl and semiconductor GaAs are investigated by employing the first-principles density functional simulations. Two kinds of interface structures, namely the top-type and bridge-type structure by connecting termination of nine Mn2 CoAl layers to the top of the As-terminated GaAs layer and bridge site between interface As atoms are respectively built. Our calculations reveal that, as for the structure with the same interface atoms, different atoms sitting directly on top of the interface As atom will lead to different interface magnetism and electronic structures. The calculated phase diagram reveals that the top-type structure including natural MnCo or MnAl termination is stable only when the interface Mn or interface Al atom directly locates on top of the As atom. Besides, bridge-type and top-type structures containing a pure Mn interface are always thermodynamically accessible regardless of values of the chemical potential of Mn and Co. The atom-resolved spin magnetic moments of most interface magnetic atoms are enhanced due to the rehybridization caused by symmetry breaking at the interface. Further analyses on electronic structures indicate that, owing to the interface effect, the interface half metallicity of all structures are completely destroyed. However, the top-type structure with MnAl termination where the interface Al atom directly sits on top of the As atom preserves the highest interface spin polarization of 80%, indicating that it has more advantages in spintronics application than other atomic terminations.

  12. Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T., Jr.; Tiusan, C.; Hehn, M.; Petrisor, T.

    2011-10-01

    This paper shows the correlation between chemical order, lattice strains, and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization is performed using vector-field magnetometery combined with a numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and two uniaxial. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonic increase. The uniaxial anisotropy that is parallel to the hard biaxial axes (related to chemical homogeneity) decreases, while the anisotropy that is supposed to have a magnetostatic origin remains constant.

  13. Simultaneous large enhancements in thermopower and electrical conductivity of bulk nanostructured half-Heusler alloys.

    PubMed

    Makongo, Julien P A; Misra, Dinesh K; Zhou, Xiaoyuan; Pant, Aditya; Shabetai, Michael R; Su, Xianli; Uher, Ctirad; Stokes, Kevin L; Poudeu, Pierre F P

    2011-11-23

    Large reductions in the thermal conductivity of thermoelectrics using nanostructures have been widely demonstrated. Some enhancements in the thermopower through nanostructuring have also been reported. However, these improvements are generally offset by large drops in the electrical conductivity due to a drastic reduction in the mobility. Here, we show that large enhancements in the thermopower and electrical conductivity of half-Heusler (HH) phases can be achieved simultaneously at high temperatures through coherent insertion of nanometer scale full-Heusler (FH) inclusions within the matrix. The enhancements in the thermopower of the HH/FH nanocomposites arise from drastic reductions in the "effective" carrier concentration around 300 K. Surprisingly, the mobility increases drastically, which compensates for the decrease in the carrier concentration and minimizes the drop in the electrical conductivity. Interestingly, the carrier concentration in HH/FH nanocomposites increases rapidly with temperature, matching that of the HH matrix at high temperatures, whereas the temperature dependence of the mobility significantly deviates from the typical T(-α) law and slowly decreases (linearly) with rising temperature. This remarkable interplay between the temperature dependence of the carrier concentration and mobility in the nanocomposites results in large increases in the power factor at 775 K. In addition, the embedded FH nanostructures also induce moderate reductions in the thermal conductivity leading to drastic increases in the ZT of HH(1 - x)/FH(x) nanocomposites at 775 K. By combining transmission electron microscopy and charge transport data, we propose a possible charge carrier scattering mechanism at the HH/FH interfaces leading to the observed anomalous electronic transport in the synthesized HH(1 - x)/FH(x) nanocomposites.

  14. Direct observation of the electronic structure in thermoelectric half-Heusler alloys Zr1-xMxNiSn (M = Y and Nb)

    NASA Astrophysics Data System (ADS)

    Hattori, Kengo; Miyazaki, Hidetoshi; Yoshida, Kento; Inukai, Manabu; Nishino, Yoichi

    2015-05-01

    This study investigates the electronic and local crystal structures of the hole-doped Zr1-xYxNiSn and electron-doped Zr1-xNbxNiSn alloys using synchrotron radiation photoemission spectroscopy (SR-PES) and synchrotron radiation X-ray powder diffraction (SR-XRD) measurements, thereby clarifying the mechanisms underlying the thermoelectric performance of the p- and n-type alloys. SR-XRD analysis reveals an interstitial Ni disorder in the half-Heusler structure and the substitution of the dopant Y and Nb atoms at the Zr site. SR-PES result shows that the variation in the electronic structure of the alloys due to doping can be explained on the basis of the rigid band model. The asymmetric pseudo-gap near the Fermi level, which is rather unexpected from the band structure calculation because of the presence of the interstitial Ni disorder, could possibly be the reason underlying poor thermoelectric performance of p-type half-Heusler ZrNiSn alloys when compared with the n-type counterparts.

  15. Large tunnel magnetoresistance at room temperature with a Co{sub 2}FeAl full-Heusler alloy electrode

    SciTech Connect

    Okamura, S.; Miyazaki, A.; Sugimoto, S.; Tezuka, N.; Inomata, K.

    2005-06-06

    Magnetic tunnel junctions (MTJs) with a Co{sub 2}FeAl Heusler alloy electrode are fabricated by the deposition of the film using an ultrahigh vacuum sputtering system followed by photolithography and Ar ion etching. A tunnel magnetoresistance (TMR) of 47% at room temperature (RT) are obtained in a stack of Co{sub 2}FeAl/Al-O{sub x}/Co{sub 75}Fe{sub 25} magnetic tunnel junction (MTJ) fabricated on a thermally oxidized Si substrate despite the A2 type atomic site disorder for Co{sub 2}FeAl. There is no increase of TMR in MTJs with the B2 type Co{sub 2}FeAl, which is prepared by the deposition on a heated substrate. X-ray photoelectron spectroscopy (XPS) depth profiles in Co{sub 2}FeAl single layer films reveal that Al atoms in Co{sub 2}FeAl are oxidized preferentially at the surfaces. On the other hand, at the interfaces in Co{sub 2}FeAl/Al-O{sub x}/Co{sub 75}Fe{sub 25} MTJs, the ferromagnetic layers are hardly oxidized during plasma oxidation for a formation of Al oxide barriers.

  16. Relation between martensitic transformation temperature range and lattice distortion ratio of NiMnGaCoCu Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wei, Jun; Xie, Ren; Chen, Le-Yi; Tang, Yan-Mei; Xu, Lian-Qiang; Tang, Shao-Long; Du, You-Wei

    2014-04-01

    In order to study the relation between martensitic transformation temperature range ΔT (where ΔT is the difference between martensitic transformation start and finish temperature) and lattice distortion ratio (c/a) of martensitic transformation, a series of Ni46Mn28-xGa22Co4Cux (x = 2-5) Heusler alloys is prepared by arc melting method. The vibration sample magnetometer (VSM) experiment results show that ΔT increases when x > 4 and decreases when x < 4 with x increasing, and the minimal ΔT (about 1 K) is found at x = 4. Ambient X-ray diffraction (XRD) results show that ΔT is proportional to c/a for non-modulated Ni46Mn28-xGa22Co4Cux (x = 2-5) martensites. The relation between ΔT and c/a is in agreement with the analysis result obtained from crystal lattice mismatch model. About 1000-ppm strain is found for the sample at x = 4 when heating temperature increases from 323 K to 324 K. These properties, which allow a modulation of ΔT and temperature-induced strain during martensitic transformation, suggest Ni46Mn24Ga22Co4Cu4 can be a promising actuator and sensor.

  17. Electric field tunability of microwave soft magnetic properties of Co2FeAl Heusler alloy film

    NASA Astrophysics Data System (ADS)

    Li, Shandong; Xu, Jie; Xue, Qian; Du, Honglei; Li, Qiang; Chen, Caiyun; Yang, Ru; Xie, Shiming; Liu, Ming; Nan, Tianxiang; Sun, Nian X.; Shao, Weiquan

    2015-05-01

    Co2FeAl Heusler alloy film with 100 nm in thickness was sputtered on (011)-cut lead zinc niobate-lead titanate (PZN-PT) single crystal slabs. It was revealed that this multiferroic laminate shows very large electric field (E-field) tunability of microwave soft magnetic properties. With the increase of electric field from 0 to 8 kV/cm on PZN-PT, the anisotropy field, HK, of the Co2FeAl film along [100] direction of PZN-PT is dramatically enhanced from 65 to 570 Oe due to the strong magnetoelectric (ME) coupling between ferromagnetic Co2FeAl film and ferroelectric substrate. At the same time, the damping constant α of Co2FeAl film dramatically decreases from 0.20 to 0.029. As a result, a significantly shift of self-biased ferromagnetic resonance frequency, fFMR, from 1.86 to 6.68 GHz with increment of 3.6 times was obtained. These features demonstrate that Co2FeAl/PZN-PT multiferroic laminate is promising in fabrication of E-field tunable microwave components.

  18. Phase transitions, magnetotransport and magnetocaloric effects in a new family of quaternary Ni-Mn-In-Z Heusler alloys.

    PubMed

    Kazakov, Alexander; Prudnikov, Valerii; Granovsky, Alexander; Perov, Nikolai; Dubenko, Igor; Pathak, Arjun Kumar; Samanta, Tapas; Stadler, Shane; Ali, Naushad; Zhukov, Arcady; Ilyin, Maxim; Gonzalez, Julian

    2012-09-01

    The magnetic, magnetotransport, and magnetocaloric properties near compound phase transitions in Ni50Mn35In14Z (Z = In, Ge, Al), and Ni48Co2Mn35In15 Heusler alloys have been studied using VSM and SQUID magnetometers (at magnetic fields (H) up to 5 T), four-probe method (at H = 0.005-1.5 T), and an adiabatic magnetocalorimeter (for H changes up to deltaH = 1.8 T), respectively. The martensitic transformation (MT) is accompanied by large magnetoresistance (up to 70%), a significant change in resistivity (up to 200%), and a sign reversal of the ordinary Hall effect coefficient, all related to a strong change in the electronic spectrum at the MT. The field dependences of the Hall resistance are complex in the vicinity of the MT, indicating a change in the relative concentrations of the austenite and martensite phases at strong fields. Negative and positive changes in adiabatic temperatures of about -2 K and +2 K have been observed in the vicinity of MT and Curie temperatures, respectively, for deltaH = 1.8 T.

  19. Modelling current-induced magnetization switching in Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar

    SciTech Connect

    Huang, H. B.; Ma, X. Q.; Liu, Z. H.; Zhao, C. P.; Chen, L. Q.

    2014-04-07

    We investigated the current-induced magnetization switching in a Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar by using micromagnetic simulations. We demonstrated that the elimination of the intermediate state is originally resulted from the decease of effective magnetic anisotropy constant. The magnetization switching can be achieved at a small current density of 1.0 × 10{sup 4} A/cm{sup 2} by increasing the demagnetization factors of x and y axes. Based on our simulation, we found magnetic anisotropy and demagnetization energies have different contributions to the magnetization switching.

  20. Two successive magneto-structural transformations and their relation to enhanced magnetocaloric effect for Ni55.8Mn18.1Ga26.1 Heusler alloy.

    PubMed

    Li, Zhe; Xu, Kun; Zhang, Yuanlei; Tao, Chang; Zheng, Dong; Jing, Chao

    2015-01-01

    In the present work, two successive magneto-structural transformations (MSTs) consisting of martensitic and intermartensitic transitions have been observed in polycrystalline Ni55.8Mn18.1Ga26.1 Heusler alloy. Benefiting from the additional latent heat contributed from intermediate phase, this alloy exhibits a large transition entropy change ΔStr with the value of ~27 J/kg K. Moreover, the magnetocaloric effect (MCE) has been also evaluated in terms of Maxwell relation. For a magnetic field change of 30 kOe, it was found that the calculated value of refrigeration capacity in Ni55.8Mn18.1Ga26.1 attains to ~72 J/kg around room temperature, which significantly surpasses those obtained for many Ni-Mn based Heusler alloys in the same condition. Such an enhanced MCE can be ascribed to the fact that the isothermal entropy change ΔST is spread over a relatively wide temperature interval owing to existence of two successive MSTs for studied sample.

  1. Two successive magneto-structural transformations and their relation to enhanced magnetocaloric effect for Ni55.8Mn18.1Ga26.1 Heusler alloy

    PubMed Central

    Li, Zhe; Xu, Kun; Zhang, Yuanlei; Tao, Chang; Zheng, Dong; Jing, Chao

    2015-01-01

    In the present work, two successive magneto-structural transformations (MSTs) consisting of martensitic and intermartensitic transitions have been observed in polycrystalline Ni55.8Mn18.1Ga26.1 Heusler alloy. Benefiting from the additional latent heat contributed from intermediate phase, this alloy exhibits a large transition entropy change ΔStr with the value of ~27 J/kg K. Moreover, the magnetocaloric effect (MCE) has been also evaluated in terms of Maxwell relation. For a magnetic field change of 30 kOe, it was found that the calculated value of refrigeration capacity in Ni55.8Mn18.1Ga26.1 attains to ~72 J/kg around room temperature, which significantly surpasses those obtained for many Ni-Mn based Heusler alloys in the same condition. Such an enhanced MCE can be ascribed to the fact that the isothermal entropy change ΔST is spread over a relatively wide temperature interval owing to existence of two successive MSTs for studied sample. PMID:26450663

  2. Design of Fatigue Resistant Heusler-strengthened PdTi-based Shape Memory Alloys for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Frankel, Dana J.

    The development of non-surgical transcatheter aortic valve implantation (TAVI) techniques, which utilize collapsible artificial heart valves with shape memory alloy (SMA)-based frames, pushes performance requirements for biomedical SMAs beyond those for well-established vascular stent applications. Fatigue life for these devices must extend into the ultra-high cycle fatigue (UHCF) regime (>600M cycles) with zero probability of failure predicted at applied strain levels. High rates of Ni-hypersensitivity raise biocompatibility concerns, driving the development of low-Ni and Ni-free SMAs. This work focuses on the development of biocompatible, precipitation-strengthened, fatigue-resistant PdTi-based SMAs for biomedical applications. Functional and structural fatigue are both manifestations of cyclic instability resulting in accumulation of slip and eventual structural damage. While functional fatigue is easily experimentally evaluated, structural fatigue is more difficult to measure without the proper equipment. Therefore, in this work a theoretical approach using a model well validated in steels is utilized to investigate structural fatigue behavior in NiTi in the UHCF regime, while low cycle functional fatigue is evaluated in order to monitor the core phenomena of the cyclic instability. Results from fatigue simulations modeling crack nucleation at non-metallic inclusions in commercial NiTi underscore the importance of increasing yield strength for UHCF performance. Controlled precipitation of nanoscale, low-misfit, L21 Heusler aluminides can provide effective strengthening. Phase relations, precipitation kinetics, transformation temperature, transformation strain, cyclic stability, and mechanical properties are characterized in both Ni-free (Pd,Fe)(Ti,Al) and low-Ni high-strength "hybrid" (Pd,Ni)(Ti,Zr,Al) systems. Atom probe tomography is employed to measure phase compositions and particle sizes used to calibrate LSW models for coarsening kinetics and Gibbs

  3. Optical properties of heusler alloys Co2FeSi, Co2FeAl, Co2CrAl, and Co2CrGa

    NASA Astrophysics Data System (ADS)

    Shreder, E. I.; Svyazhin, A. D.; Belozerova, K. A.

    2013-11-01

    The results of an investigation of optical properties and the calculations of the electronic structure of Co2FeSi, Co2FeAl, Co2CrAl, and Co2CrGa Heusler alloys are presented. The main focus of our attention is the study of the spectral dependence of the real part (ɛ1) and imaginary part (ɛ2) of the dielectric constant in the range of wavelengths λ = 0.3-13 μm using the ellipsometric method. An anomalous behavior of the optical conductivity σ(ω) has been found in the infrared range in the Co2CrAl and Co2CrGa alloys, which differs substantially from that in the Co2FeSi and Co2FeAl alloys. The results obtained are discussed based on the calculations of the electronic structure.

  4. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    SciTech Connect

    Feng, Wuwei Wang, Weihua; Zhao, Chenglong; Van Quang, Nguyen; Cho, Sunglae; Dung, Dang Duc

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  5. Ferromagnetic Schottky junctions using half-metallic Co{sub 2}MnSi/diamond heterostructures

    SciTech Connect

    Ueda, K.; Soumiya, T.; Nishiwaki, M.; Asano, H.

    2013-07-29

    We demonstrate half-metallic Heusler Co{sub 2}MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co{sub 2}MnSi/diamond interfaces. The Co{sub 2}MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co{sub 2}MnSi films. Schottky junctions formed using the Co{sub 2}MnSi/diamond heterostructures at 400 °C showed clear rectification properties with a rectification ratio of ∼10{sup 3}. The Schottky barrier heights of the Co{sub 2}MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co{sub 2}MnSi is a promising spin source for spin injection into diamond.

  6. High field magnetic behavior in Boron doped Fe2VAl Heusler alloys

    NASA Astrophysics Data System (ADS)

    Venkatesh, Ch.; Vasundhara, M.; Srinivas, V.; Rao, V. V.

    2016-11-01

    We have investigated the magnetic behavior of Fe2VAl1-xBx (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the Tc, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (MS) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble MS at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method.

  7. Magnetic and structural anisotropies in laser ablated epitaxial thin films of full-Heusler alloy Co2MnSi on SrTiO3

    NASA Astrophysics Data System (ADS)

    Pandey, Himanshu; Rout, P. K.; Budhani, R. C.

    2013-03-01

    We present the thickness dependent magnetic properties of laser ablated epitaxial Co2MnSi (CMS)Heusler alloy thin films grown on (001) oriented SrTiO3 substrate. In order to study the intrinsic magnetic anisotropy, a highly ordered single crystal thin film of Heusler alloys is necessary. This provides a unique opportunity to determine the behavior of magnetization reversal, and affect important properties such as the coercive field and remanence. The two important sources of the magnetic anisotropy are the magnetic dipolar interaction and the spin-orbit interaction. The strain in films due to the lattice mismatch with the substrate affects the shape anisotropy while spin-orbit coupling changes magneto-crystalline anisotropy. We have observed an in-plane biaxial compressive strain in the films which relaxes with increasing film thickness. Although the hysteresis loops show an in-plane easy axis for all films, the single-domain phase diagram reveals a gradual transition from in-plane to out-of-plane transition of magnetization as the film thickness is decreased. The magnetization starts to cant as film thickness start to decrease and we found a canting angle of ~ 31.8° with respect to the film plane for our thinnest 5 nm CMS films. We acknowledge support from DIT, DST, CSIR and IIT Kanpur.

  8. A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes

    NASA Astrophysics Data System (ADS)

    Fujita, Yuichi; Yamada, Michihiro; Nagatomi, Yuta; Yamamoto, Keisuke; Yamada, Shinya; Sawano, Kentarou; Kanashima, Takeshi; Nakashima, Hiroshi; Hamaya, Kohei

    2016-06-01

    A possible low-temperature fabrication process of a gate-stack for Ge-based spin metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. First, since we use epitaxial ferromagnetic Heusler alloys on top of the phosphorous doped Ge epilayer as spin injector and detector, we need a dry etching process to form Heusler-alloy/n+-Ge Schottky-tunnel contacts. Next, to remove the Ge epilayers damaged by the dry etching process, the fabricated structures are dipped in a 0.03% diluted H2O2 solution. Finally, Al/SiO2/GeO2/Ge gate-stack structures are fabricated at 300 °C as a top gate-stack structure. As a result, the currents in the Ge-MOSFET fabricated here can be modulated by applying gate voltages even by using the low-temperature formed gate-stack structures. This low-temperature fabrication process can be utilized for operating Ge spin MOSFETs with a top gate electrode.

  9. Structural and magnetic properties of epitaxial Heusler alloy Fe{sub 2}Cr{sub 0.5}Co{sub 0.5}Si

    SciTech Connect

    Wang, Yu-Pu; Han, Gu-Chang; Qiu, Jinjun; Yap, Qi-Jia; Lu, Hui; Teo, Kie-Leong

    2014-05-07

    This paper reports the study of structural and magnetic properties of Heusler alloy Fe{sub 2}Cr{sub 0.5}Co{sub 0.5}Si (FCCS) thin film and its tunnel magnetoresistance (TMR) effect. The smooth quaternary Heusler alloy FCCS film with surface roughness of rms value of 0.25 nm measured by atomic force microscopy and partial L2{sub 1} phase was obtained by magnetron sputtering at room temperature followed by in-situ annealing at 400 °C. The saturation magnetization and coercivity of FCCS are 410 emu/cm{sup 3} and 20 Oe, respectively. The magnetic tunnel junctions (MTJs) using FCCS as free layer were studied in detail as a function of post-annealing temperature. A TMR ratio of 15.6% has been achieved with 300 °C post-annealing. This is about twice the highest TMR ratio obtained in MTJs using Fe{sub 2}CrSi. The enhancement of TMR ratio can be attributed to the successful tuning of the Fermi level of Fe{sub 2}CrSi close to the center of the minority band gap by Co-doping.

  10. Current-perpendicular-to-plane giant magnetoresistance using Co{sub 2}Fe(Ga{sub 1-x}Ge{sub x}) Heusler alloy

    SciTech Connect

    Goripati, H. S.; Furubayashi, T.; Takahashi, Y. K.; Hono, K.

    2013-01-28

    We investigated the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) of pseudo spin valves (PSVs) using ferromagnetic (FM) Heusler alloy Co{sub 2}Fe(Ga{sub 1-x}Ge{sub x}) (x = 0, 0.5, and 1) layers and an Ag spacer layer. The FM layer with x = 0.5 gave rise to the highest MR output, {Delta}RA = 8.7 m{Omega}{center_dot}{mu}m{sup 2}, at room temperature with 10 nm thick Heusler alloy layers. The MR output increased with increasing annealing temperature, T{sub a}, with a maximum at T{sub a} = 500 Degree-Sign C. Transmission electron microscopy showed no visible changes in the layered structure; however, energy dispersive x-ray analysis indicated a considerable diffusion of Ga and Ge into the other layers by annealing at T{sub a} = 550 Degree-Sign C. The {Delta}RA dependence on the thickness of the FM layers indicated that both high bulk and interface spin asymmetries contribute to the high MR output.

  11. Effect of an interface Mg insertion layer on the reliability of a magnetic tunnel junction based on a Co2FeAl full-Heusler alloy

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Min; Kil, Gyu Hyun; Lee, Gae Hun; Choi, Chul Min; Song, Yun-Heub; Sukegawa, Hiroaki; Mitani, Seiji

    2014-04-01

    The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.

  12. A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes

    NASA Astrophysics Data System (ADS)

    Fujita, Yuichi; Yamada, Michihiro; Nagatomi, Yuta; Yamamoto, Keisuke; Yamada, Shinya; Sawano, Kentarou; Kanashima, Takeshi; Nakashima, Hiroshi; Hamaya, Kohei

    2016-06-01

    A possible low-temperature fabrication process of a gate-stack for Ge-based spin metal–oxide–semiconductor field-effect transistor (MOSFET) is investigated. First, since we use epitaxial ferromagnetic Heusler alloys on top of the phosphorous doped Ge epilayer as spin injector and detector, we need a dry etching process to form Heusler-alloy/n+-Ge Schottky-tunnel contacts. Next, to remove the Ge epilayers damaged by the dry etching process, the fabricated structures are dipped in a 0.03% diluted H2O2 solution. Finally, Al/SiO2/GeO2/Ge gate-stack structures are fabricated at 300 °C as a top gate-stack structure. As a result, the currents in the Ge-MOSFET fabricated here can be modulated by applying gate voltages even by using the low-temperature formed gate-stack structures. This low-temperature fabrication process can be utilized for operating Ge spin MOSFETs with a top gate electrode.

  13. Study of effect of copper-substitution at Ga site in some Ga-based Heusler alloys from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Roy, Tufan; Chakrabarti, Aparna

    2015-06-01

    In this work we have predicted the mechanical and magnetic properties of cubic austenite phase of the Cu substituted alloys of Ni2MnGa and Mn2NiGa at the Ga site i.e. Ni2MnCu and Mn2NiCu, respectively, as well as of Pt2MnCu and Pd2MnCu. We have observed that the conventional Heusler structure is lower in energy compared to the inverse Heusler structure for the Ni2MnGa, Pt2MnGa and Pd2MnGa and the Cu-substituted materials, whereas Mn2NiGa and its Cu-substituted alloy at Ga site assume the inverse structure. From the calculated elastic constants, we find that Pt2MnCu is expected to be the most ductile material among all the substituted materials studied here. We have calculated and compared the Curie temperatures derived from the Heisenberg exchange coupling parameters.

  14. Half-heusler alloys with enhanced figure of merit and methods of making

    SciTech Connect

    Ren, Zhifeng; Yan, Xiao; Joshi, Giri; Chen, Shuo; Chen, Gang; Poudel, Bed; Caylor, James Christopher

    2015-06-02

    Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

  15. Magnetic, thermal, and electrical properties of an Ni45.37Mn40.91In13.72 Heusler alloy

    NASA Astrophysics Data System (ADS)

    Batdalov, A. B.; Aliev, A. M.; Khanov, L. N.; Buchel'nikov, V. D.; Sokolovskii, V. V.; Koledov, V. V.; Shavrov, V. G.; Mashirov, A. V.; Dil'mieva, E. T.

    2016-05-01

    The magnetization, the electrical resistivity, the specific heat, the thermal conductivity, and the thermal diffusion of a polycrystalline Heusler alloy Ni45.37Mn40.91In13.72 sample are studied. Anomalies, which are related to the coexistence of martensite and austenite phases and the change in their ratio induced by a magnetic field and temperature, are revealed and interpreted. The behavior of the properties of the alloy near Curie temperature T C also demonstrates signs of a structural transition, which suggests that the detected transition is a first-order magnetostructural phase transition. The nontrivial behavior of specific heat detected near the martensite transformation temperatures is partly related to a change in the electron density of states near the Fermi level. The peculiar peak of phonon thermal conductivity near the martensitic transformation is interpreted as a consequence of the appearance of additional soft phonon modes, which contribute to the specific heat and the thermal conductivity.

  16. Hysteresis and magnetocaloric effect at the magnetostructural phase transition of Ni-Mn-Ga and Ni-Mn-Co-Sn Heusler alloys

    NASA Astrophysics Data System (ADS)

    Basso, Vittorio; Sasso, Carlo P.; Skokov, Konstantin P.; Gutfleisch, Oliver; Khovaylo, Vladimir V.

    2012-01-01

    Hysteresis features of the direct and inverse magnetocaloric effect associated with first-order magnetostructural phase transitions in Ni-Mn-X (X = Ga, Sn) Heusler alloys have been disclosed by differential calorimetry measurements performed either under a constant magnetic field, H, or by varying H in isothermal conditions. We have shown that the magnetocaloric effect in these alloys crucially depends on the employed measuring protocol. Experimentally observed peculiarities of the magnetocaloric effect have been explained in the framework of a model that accounts for different contributions to the Gibbs energy of austenitic gA and martensitic gM phases. Obtained experimental results have been summarized by plotting a phase fraction of the austenite xA versus the driving force gM-gA. The developed approach allows one to predict reversible and irreversible features of the direct as well as inverse magnetocaloric effect in a variety of materials with first-order magnetic phase transitions.

  17. Long-range antiferromagnetic interactions in Ni-Co-Mn-Ga metamagnetic Heusler alloys: A two-step ordering studied by neutron diffraction

    NASA Astrophysics Data System (ADS)

    Orlandi, F.; Fabbrici, S.; Albertini, F.; Manuel, P.; Khalyavin, D. D.; Righi, L.

    2016-10-01

    We report on the experimental observation of a long-range antiferromagnetic structure in the metamagnetic Ni-Co-Mn-Ga Heusler alloys. The accurate magnetic symmetry analysis based on experimental neutron diffraction data, exploiting the Shubnikov theory, allows the determination of the correct magnetic space group of the system. A two-step process, featuring the ordering of the Ni and Mn sublattices at different temperatures, leads to the antiferromagnetic structure in martensite. A perfect, constrained by the symmetry, antiferromagnetic ordering of the Ni sublattice in the "paramagnetic gap" is observed, followed by the ordering of the Mn sublattice at lower temperatures. The observation of such antiferromagnetic structure clarifies the current debate on the presence of antiferromagnetic interactions in the (Ni,Co)-Mn-X (X =Ga , Sn, Sb, and In) ferromagnetic shape memory alloys and yields new insights in understanding the magnetostructural properties of this relevant class of materials.

  18. Substitution effect on magnetic and electrical properties of half-Heusler alloy Ni{sub 1−x}Co{sub x}Mn{sub 1−y}Fe{sub y}Sb

    SciTech Connect

    Kushwaha, Varun Sharma, Himanshu Dixit, Dinesh Tomy, C. V.; Tulapurkar, Ashwin

    2014-04-24

    We have studied the effects of Co and Fe doping on the magnetic and electrical properties of half-Heusler compound NiMnSb. The alloys were prepared by arc-melting method in the presence of Argon gas. The powder X-ray diffraction of the each alloy was performed in air at room temperature. The magnetic and electrical properties were performed in the temperature range 2–400 K and in magnetic field up to 1 T.

  19. Monolayer MXenes: promising half-metals and spin gapless semiconductors

    NASA Astrophysics Data System (ADS)

    Gao, Guoying; Ding, Guangqian; Li, Jie; Yao, Kailun; Wu, Menghao; Qian, Meichun

    2016-04-01

    Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate using first-principles calculations that monolayers Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00μB per formula unit, respectively, while monolayer V2C is a metal with unstable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from a nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a suitable biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

  20. Electronic structure and magnetic properties of disordered Co{sub 2}FeAl Heusler alloy

    SciTech Connect

    Jain, Vishal Jain, Vivek Sudheesh, V. D. Lakshmi, N. Venugopalan, K.

    2014-04-24

    The effects of disorder on the magnetic properties of Co{sub 2}FeAl alloy are reported. X-ray diffraction exhibit A2-type disordered structure. Room temperature Mössbauer studies show the presence of two sextets with hyperfine field values of 31T and 30T along with a nonmagnetic singlet. The electronic structure of ordered and disordered Co{sub 2}FeAl alloys, investigated by means of the KKR Green's-function method shows that the magnetic moment of the ordered structure is 5.08μ{sub B} and is 5.10μ{sub B} when disordered. However, a much higher magnetic moment of 5.74μ{sub B} is observed experimentally.

  1. Electronic structure and magnetic properties of disordered Co2FeAl Heusler alloy

    NASA Astrophysics Data System (ADS)

    Jain, Vishal; Jain, Vivek; Sudheesh, V. D.; Lakshmi, N.; Venugopalan, K.

    2014-04-01

    The effects of disorder on the magnetic properties of Co2FeAl alloy are reported. X-ray diffraction exhibit A2-type disordered structure. Room temperature Mössbauer studies show the presence of two sextets with hyperfine field values of 31T and 30T along with a nonmagnetic singlet. The electronic structure of ordered and disordered Co2FeAl alloys, investigated by means of the KKR Green's-function method shows that the magnetic moment of the ordered structure is 5.08μB and is 5.10μB when disordered. However, a much higher magnetic moment of 5.74μB is observed experimentally.

  2. Surface spin polarization of the nonstoichiometric Heusler alloy Co2MnSi

    NASA Astrophysics Data System (ADS)

    Wüstenberg, Jan-Peter; Fetzer, Roman; Aeschlimann, Martin; Cinchetti, Mirko; Minár, Jan; Braun, Jürgen; Ebert, Hubert; Ishikawa, Takayuki; Uemura, Tetsuya; Yamamoto, Masafumi

    2012-02-01

    Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of nonstoichiometric Co2MnαSi thin films (with α=0.69 and α=1.19) with bulk L21 order. We find that for Mn-poor alloys the spin polarization at the Fermi energy (EF) is negative due to the presence of CoMn antisite and minority surface state contributions. In Mn-rich alloys, the suppression of CoMn antisites leads to a positive spin polarization at EF, and the influence of minority surface states on the photoelectron spin polarization is reduced.

  3. Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions

    SciTech Connect

    Rata, A. D.; Braak, H.; Buergler, D. E.; Schneider, C. M.

    2007-05-01

    Growth and magnetic characterization of thin films of Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}MnSi full-Heusler compounds are investigated. Thin films were deposited by magnetron sputtering at room temperature directly onto oxidized Si wafers. These Heusler films are magnetically very soft and ferromagnetic with Curie temperatures well above room temperature. Polycrystalline Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al Heusler films combined with MgO barriers and CoFe counter electrodes are structured to magnetic tunnel junctions and yield almost 50% magnetoresistance at room temperature. The magnetoresistance shows a strong bias dependence with the maximum occurring at a voltage drop well above 1 V. This special feature is accompanied by only a moderate temperature dependence of the tunnel magnetoresistance.

  4. High energy ball milling study of Fe{sub 2}MnSn Heusler alloy

    SciTech Connect

    Jain, Vivek Kumar Lakshmi, N.; Jain, Vishal; Sijo, A. K.; Venugopalan, K.

    2015-06-24

    The structural and magnetic properties of as-melted and high energy ball milled alloy samples have been studied by X-ray diffraction, DC magnetization and electronic structure calculations by means of density functional theory. The observed properties are compared to that of the bulk sample. There is a very good enhancement of saturation magnetization and coercivity in the nano-sized samples as compared to bulk which is explained in terms of structural disordering and size effect.

  5. High energy ball milling study of Fe2MnSn Heusler alloy

    NASA Astrophysics Data System (ADS)

    Jain, Vivek Kumar; Lakshmi, N.; Jain, Vishal; Sijo A., K.; Venugopalan, K.

    2015-06-01

    The structural and magnetic properties of as-melted and high energy ball milled alloy samples have been studied by X-ray diffraction, DC magnetization and electronic structure calculations by means of density functional theory. The observed properties are compared to that of the bulk sample. There is a very good enhancement of saturation magnetization and coercivity in the nano-sized samples as compared to bulk which is explained in terms of structural disordering and size effect.

  6. Phase transition processes and magnetocaloric effects in the Heusler alloys NiMnGa with concurrence of magnetic and structural phase transition

    NASA Astrophysics Data System (ADS)

    Long, Y.; Zhang, Z. Y.; Wen, D.; Wu, G. H.; Ye, R. C.; Chang, Y. Q.; Wan, F. R.

    2005-08-01

    The Ni2MnGa-based Heusler alloys with high magnetocaloric effect have attracted considerable attention as a promising magnetic refrigerant. The phase-transition processes and magnetic entropy changes in the NiMnGa alloys with the concurrence of magnetic and structural phase transitions were studied. The ac magnetic susceptibility results showed the magnetic transition occurred during the reverse martensitic phase transition in the Ni55.5Mn20Ga24.5 alloy and the direct transition from the ferromagnetic matrensitic phase to the paramagnetic austenitic phase occurred in the Ni54.9Mn20.5Ga24.6 alloy. When the magnetic field had changed to 2 T, a comparable large magnetic entropy change was observed in both the Ni55.5Mn20Ga24.5 and Ni54.9Mn20.5Ga24.6 alloys, which is speculated as the result of the discontinuous change of magnetization near the phase transition.

  7. Half-metallicity in 2D organometallic honeycomb frameworks

    NASA Astrophysics Data System (ADS)

    Sun, Hao; Li, Bin; Zhao, Jin

    2016-10-01

    Half-metallic materials with a high Curie temperature (T C) have many potential applications in spintronics. Magnetic metal free two-dimensional (2D) half-metallic materials with a honeycomb structure contain graphene-like Dirac bands with π orbitals and show excellent aspects in transport properties. In this article, by investigating a series of 2D organometallic frameworks with a honeycomb structure using first principles calculations, we study the origin of forming half-metallicity in this kind of 2D organometallic framework. Our analysis shows that charge transfer and covalent bonding are two crucial factors in the formation of half-metallicity in organometallic frameworks. (i) Sufficient charge transfer from metal atoms to the molecules is essential to form the magnetic centers. (ii) These magnetic centers need to be connected through covalent bonding, which guarantee the strong ferromagnetic (FM) coupling. As examples, the organometallic frameworks composed by (1,3,5)-benzenetricarbonitrile (TCB) molecules with noble metals (Au, Ag, Cu) show half-metallic properties with T C as high as 325 K. In these organometallic frameworks, the strong electronegative cyano-groups (CN groups) drive the charge transfer from metal atoms to the TCB molecules, forming the local magnetic centers. These magnetic centers experience strong FM coupling through the d-p covalent bonding. We propose that most of the 2D organometallic frameworks composed by molecule—CN—noble metal honeycomb structures contain similar half metallicity. This is verified by replacing TCB molecules with other organic molecules. Although the TCB-noble metal organometallic framework has not yet been synthesized, we believe the development of synthesizing techniques and facility will enable the realization of them. Our study provides new insight into the 2D half-metallic material design for the potential applications in nanotechnology.

  8. Half-metallicity in 2D organometallic honeycomb frameworks.

    PubMed

    Sun, Hao; Li, Bin; Zhao, Jin

    2016-10-26

    Half-metallic materials with a high Curie temperature (T C) have many potential applications in spintronics. Magnetic metal free two-dimensional (2D) half-metallic materials with a honeycomb structure contain graphene-like Dirac bands with π orbitals and show excellent aspects in transport properties. In this article, by investigating a series of 2D organometallic frameworks with a honeycomb structure using first principles calculations, we study the origin of forming half-metallicity in this kind of 2D organometallic framework. Our analysis shows that charge transfer and covalent bonding are two crucial factors in the formation of half-metallicity in organometallic frameworks. (i) Sufficient charge transfer from metal atoms to the molecules is essential to form the magnetic centers. (ii) These magnetic centers need to be connected through covalent bonding, which guarantee the strong ferromagnetic (FM) coupling. As examples, the organometallic frameworks composed by (1,3,5)-benzenetricarbonitrile (TCB) molecules with noble metals (Au, Ag, Cu) show half-metallic properties with T C as high as 325 K. In these organometallic frameworks, the strong electronegative cyano-groups (CN groups) drive the charge transfer from metal atoms to the TCB molecules, forming the local magnetic centers. These magnetic centers experience strong FM coupling through the d-p covalent bonding. We propose that most of the 2D organometallic frameworks composed by molecule-CN-noble metal honeycomb structures contain similar half metallicity. This is verified by replacing TCB molecules with other organic molecules. Although the TCB-noble metal organometallic framework has not yet been synthesized, we believe the development of synthesizing techniques and facility will enable the realization of them. Our study provides new insight into the 2D half-metallic material design for the potential applications in nanotechnology.

  9. Half-metallicity in 2D organometallic honeycomb frameworks.

    PubMed

    Sun, Hao; Li, Bin; Zhao, Jin

    2016-10-26

    Half-metallic materials with a high Curie temperature (T C) have many potential applications in spintronics. Magnetic metal free two-dimensional (2D) half-metallic materials with a honeycomb structure contain graphene-like Dirac bands with π orbitals and show excellent aspects in transport properties. In this article, by investigating a series of 2D organometallic frameworks with a honeycomb structure using first principles calculations, we study the origin of forming half-metallicity in this kind of 2D organometallic framework. Our analysis shows that charge transfer and covalent bonding are two crucial factors in the formation of half-metallicity in organometallic frameworks. (i) Sufficient charge transfer from metal atoms to the molecules is essential to form the magnetic centers. (ii) These magnetic centers need to be connected through covalent bonding, which guarantee the strong ferromagnetic (FM) coupling. As examples, the organometallic frameworks composed by (1,3,5)-benzenetricarbonitrile (TCB) molecules with noble metals (Au, Ag, Cu) show half-metallic properties with T C as high as 325 K. In these organometallic frameworks, the strong electronegative cyano-groups (CN groups) drive the charge transfer from metal atoms to the TCB molecules, forming the local magnetic centers. These magnetic centers experience strong FM coupling through the d-p covalent bonding. We propose that most of the 2D organometallic frameworks composed by molecule-CN-noble metal honeycomb structures contain similar half metallicity. This is verified by replacing TCB molecules with other organic molecules. Although the TCB-noble metal organometallic framework has not yet been synthesized, we believe the development of synthesizing techniques and facility will enable the realization of them. Our study provides new insight into the 2D half-metallic material design for the potential applications in nanotechnology. PMID:27541575

  10. A less expensive NiMnGa based Heusler alloy for magnetic refrigeration

    NASA Astrophysics Data System (ADS)

    Mejía, C. Salazar; Gomes, A. M.; de Oliveira, L. A. S.

    2012-04-01

    We present a study of the substitution of Mn by Cu on the compound Ni2 Mn1-x Cux Ga0.9 Al0.1, showing that the substitution of a small amount of Al on the Ga site does not affect the magnetic and magnetocaloric potential compared to Ni2(Mn,Cu)Ga alloy. The samples were prepared with 10% substitution of Al and with Cu concentrations of x = 0.0, 0.2, and 0.3. Magnetization measurements as a function of temperature performed from 10 to 400 K, with an applied field of 0.02 T showed a ferromagnetic state, with critical temperature Tc = 295 and 300 K for the samples with Cu, x = 0.2 and 0.3, respectively. For the sample without Cu, a complex behavior is observed at Tc = 370 K, with martensitic transition at 220 K and a premartensitic at 250 K. Analysis of x-rays diffractograms at room temperature show a L 21 structure for x = 0.0, while for x = 0.2 a mixture of L 21 and martensitic is present, and the sample with x = 0.3 it is in a fully martensitic phase. Heat capacity measurements were performed in order to calculate magnetocaloric effect in the samples. The results indicate that in Ni(Mn,Cu)Ga alloys, a partial substitution of Ga by Al still produce a high refrigerant capacity while reducing the costs of fabrication.

  11. Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi

    SciTech Connect

    He, L.; Chu, Y.; Collins, B. A. and Tsui, F.

    2011-03-18

    Epitaxial growth and structural properties of Co{sub x}Mn{sub y}Si{sub z} thin films on Ge (111) substrates, including the Heusler alloy Co{sub 2}MnSi (111), have been studied using combinatorial molecular beam epitaxy (MBE) techniques. In situ reflection high energy electron diffraction and ex situ x-ray diffraction experiments show that high quality coherent MBE growth with fcc (111) stacking can be achieved over a relatively large composition space that includes Co{sub 2}MnSi. The highest structural and chemical ordering is observed near the composition of Co{sub 0.63}Mn{sub 0.14}Si{sub 0.23} rather than that at the Heusler stoichiometry of Co{sub 2}MnSi. The in-plane crystallographic axis of the fcc film exhibits a 60{sup o} rotation with respect to that of the Ge substrate. The rotation appears to be originated at the film-substrate interface, as a result of the symmetry and stacking of the Ge (111) surface reconstruction.

  12. Efficient and Robust Thermoelectric Power Generation Device Using Hot-Pressed Metal Contacts on Nanostructured Half-Heusler Alloys

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; Poudel, Bed

    2016-06-01

    We report an efficient thermoelectric device with power density of 8.9 W/cm2 and efficiency of 8.9% at 678°C temperature difference using hot-pressed titanium metal contact layers on nanostructured half-Heusler materials. The high power density and efficiency are due to the efficient nanostructured materials and very low contact resistance of ~1 μΩ cm2 between the titanium layer and half-Heusler material. Moreover, the bonding strength between the titanium and half-Heusler is more than 50 MPa, significantly higher compared with conventional contact metallization methods. The low contact resistance and high bonding strength are due to thin-layer diffusion of titanium (<100 μm) into the half-Heusler at high temperature (>600°C). The low contact resistance and high bonding strength result in a stable and efficient power generation device with great potential for use in recovery of waste heat, e.g., in automotive and industrial applications.

  13. Half-metallic zinc-blende pnictides in real environments

    NASA Astrophysics Data System (ADS)

    Shi, Li-Jie; Liu, Bang-Gui

    2005-02-01

    The structural stability of half-metallic zinc-blende pnictides and the robustness of their half-metallic ferromagnetism in the presence of tetragonal and orthorhombic crystalline deformations are studied using a full-potential linear augmented plane wave method within the density-functional theory. The total energies of zinc-blende MnAs, CrAs, and CrSb are proved to increase with deformation increase, in contrast to those of other zinc-blende half-metallic pnictides, and therefore these three are stable against the deformations but the others are not. This is consistent with the experimental fact that only these three have been fabricated. On the other hand, the half-metallic ferromagnetism of the latter two is proved to be robust enough to survive large crystal deformations. This implies that half-metallic ferromagnetism may be achieved experimentally even in substantially deformed zinc-blende ultrathin films or layers of CrAs and CrSb in real environments.

  14. Half-metallic antiferromagnet as a prospective material for spintronics.

    PubMed

    Hu, X

    2012-01-10

    Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half-metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin direction, are ideal for spintronic applications. Half-metallic antiferromagnets as a subclass of half-metals are characterized further by totally compensated spin moments in a unit cell, and have the advantage of being able to generate fully spin-polarized current while exhibiting zero macroscopic magnetization. Considerable efforts have been devoted to the search for this novel material, from which we may get useful insights for prospective material exploration.

  15. Multilayers of zinc-blende half-metals with semiconductors

    NASA Astrophysics Data System (ADS)

    Mavropoulos, Ph; Galanakis, I.; Dederichs, P. H.

    2004-06-01

    We report on first-principles calculations for multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalized structures, as well as the case of an intermixed interface. We find that, as a rule, half-metallicity can be conserved throughout the heterostructures, provided that the character of the local coordination and bonding is not disturbed. We describe a mechanism operative at the interfaces with semiconductors that can also give a non-integer spin moment per interface transition atom, and derive a simple rule for evaluating it.

  16. Chemical disorder determines the deviation of the Slater-Pauling rule for Fe2MnSi-based Heusler alloys: evidences from neutron diffraction and density functional theory.

    PubMed

    Tedesco, J C G; Pedro, S S; Caraballo Vivas, R J; Cruz, C; Andrade, V M; Dos Santos, A M; Carvalho, A M G; Costa, M; Venezuela, P; Rocco, D L; Reis, M S

    2016-11-30

    Fe2MnSi fails to follow the Slater-Pauling rule. This phenomenon is thought to originate from either: (i) an antiferromagnetic arrangement of Mn ions at low temperature and/or (ii) chemical disorder. An important insight on this issue could be achieved by considering Fe2MnSi1-x Ga x compounds, thoroughly studied here by means of magnetization, neutron diffraction and density functional calculations (DFT). Our results indicate that chemical disorder (and not the antiferromagnetic arrangement) is responsible for the deviation of the Slater-Pauling rule on Fe2MnSi-based Heusler alloys. Furthermore, evidences suggest that Ga substitution into Si site favors the Fe/Mn disorder, further enhancing the observed deviation. PMID:27633814

  17. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films.

    PubMed

    Tao, X D; Wang, H L; Miao, B F; Sun, L; You, B; Wu, D; Zhang, W; Oepen, H P; Zhao, J H; Ding, H F

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis.

  18. Observation of giant exchange bias in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy

    SciTech Connect

    Sharma, Jyoti; Suresh, K. G.

    2015-02-16

    We report a giant exchange bias (EB) field of 3520 Oe in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy. The low temperature magnetic state of the martensite phase has been studied by DC magnetization and AC susceptibility measurements. Frequency dependence of spin freezing temperature (T{sub f}) on critical slowing down relation and observation of memory effect in zero field cooling mode confirms the super spin glass (SSG) phase at low temperatures. Large EB is attributed to the strong exchange coupling between the SSG clusters formed by small regions of ferromagnetic order embedded in an antiferromagnetic (AFM) matrix. The temperature and cooling field dependence of EB have been studied and related to the change in unidirectional anisotropy at SSG/AFM interface. The training effect also corroborates with the presence of frozen (SSG) moments at the interface and their role in EB.

  19. Giant spontaneous exchange bias triggered by crossover of superspin glass in Sb-doped Ni50Mn38Ga12 Heusler alloys.

    PubMed

    Tian, Fanghua; Cao, Kaiyan; Zhang, Yin; Zeng, Yuyang; Zhang, Rui; Chang, Tieyan; Zhou, Chao; Xu, Minwei; Song, Xiaoping; Yang, Sen

    2016-01-01

    A spontaneous exchange bias (SEB) discovered by Wang et al. [Phys. Rev. Lett. 106 (2011) 077203.] after zero-field cooling (ZFC) has attracted recent attention due to its interesting physics. In this letter, we report a giant SEB tuned by Sb-doping in Ni50Mn38Ga12-xSbx Heusler alloys. Such an SEB was switched on below the blocking temperature of approximately 50 K. The maximum exchange bias HE can arrive at 2930 Oe in a Ni50Mn38Ga10Sb2 sample after ZFC to 2 K. Further studies showed that this SEB was attributable to interaction of superspin glass (SSG) and antiferromagnetic matix, which was triggered by the crossover of SSG from canonical spin glass to a cluster spin glass. Our results not only explain the underlying physics of SEB, but also provide a way to tune and control the SEB performance.

  20. Correlation between reentrant spin glass behavior and the magnetic order-disorder transition of the martensite phase in Ni-Co-Mn-Sb Heusler alloys.

    PubMed

    Nayak, Ajaya K; Suresh, K G; Nigam, A K

    2011-10-19

    We have performed ac susceptibility and dc magnetization measurements in Ni(50-x)Co(x)Mn(38)Sb(12) Heusler alloys. From the ac susceptibility measurements, the existence of reentrant spin glass (RSG) state is observed for x=0-5. It is found that the signature of RSG behavior diminishes with increase in x. This behavior is in contrast to the fact that the exchange bias field increases with x, which reveals that the origins of RSG and exchange bias are different in the present system. It is found that the system enters a frustrated ferromagnetic state just below the Curie temperature of the martensite phase (T(M)(C)) and then the RSG state at low temperature. The strength of the RSG state is critically dependent on the sharpness of the magnetic transition at (T(M)(C)). This proposition is further supported by the thermo-remanent magnetization and low field thermomagnetic measurements.

  1. Chemical disorder determines the deviation of the Slater-Pauling rule for Fe2MnSi-based Heusler alloys: evidences from neutron diffraction and density functional theory.

    PubMed

    Tedesco, J C G; Pedro, S S; Caraballo Vivas, R J; Cruz, C; Andrade, V M; Dos Santos, A M; Carvalho, A M G; Costa, M; Venezuela, P; Rocco, D L; Reis, M S

    2016-11-30

    Fe2MnSi fails to follow the Slater-Pauling rule. This phenomenon is thought to originate from either: (i) an antiferromagnetic arrangement of Mn ions at low temperature and/or (ii) chemical disorder. An important insight on this issue could be achieved by considering Fe2MnSi1-x Ga x compounds, thoroughly studied here by means of magnetization, neutron diffraction and density functional calculations (DFT). Our results indicate that chemical disorder (and not the antiferromagnetic arrangement) is responsible for the deviation of the Slater-Pauling rule on Fe2MnSi-based Heusler alloys. Furthermore, evidences suggest that Ga substitution into Si site favors the Fe/Mn disorder, further enhancing the observed deviation.

  2. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

    NASA Astrophysics Data System (ADS)

    Kasai, S.; Takahashi, Y. K.; Cheng, P.-H.; Ikhtiar, Ohkubo, T.; Kondou, K.; Otani, Y.; Mitani, S.; Hono, K.

    2016-07-01

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  3. Optimization of exchange bias in Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler alloy layers

    SciTech Connect

    Hirohata, Atsufumi; Izumida, Keisuke; Ishizawa, Satoshi; Nakayama, Tadachika; Sagar, James

    2014-05-07

    We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250 °C) and a large exchange bias H{sub ex} (>500 Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300 °C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ∼80% of the predicted saturation magnetisation. We have also induced an exchange bias of ∼240 Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.

  4. Giant spontaneous exchange bias triggered by crossover of superspin glass in Sb-doped Ni50Mn38Ga12 Heusler alloys.

    PubMed

    Tian, Fanghua; Cao, Kaiyan; Zhang, Yin; Zeng, Yuyang; Zhang, Rui; Chang, Tieyan; Zhou, Chao; Xu, Minwei; Song, Xiaoping; Yang, Sen

    2016-01-01

    A spontaneous exchange bias (SEB) discovered by Wang et al. [Phys. Rev. Lett. 106 (2011) 077203.] after zero-field cooling (ZFC) has attracted recent attention due to its interesting physics. In this letter, we report a giant SEB tuned by Sb-doping in Ni50Mn38Ga12-xSbx Heusler alloys. Such an SEB was switched on below the blocking temperature of approximately 50 K. The maximum exchange bias HE can arrive at 2930 Oe in a Ni50Mn38Ga10Sb2 sample after ZFC to 2 K. Further studies showed that this SEB was attributable to interaction of superspin glass (SSG) and antiferromagnetic matix, which was triggered by the crossover of SSG from canonical spin glass to a cluster spin glass. Our results not only explain the underlying physics of SEB, but also provide a way to tune and control the SEB performance. PMID:27478090

  5. Giant spontaneous exchange bias triggered by crossover of superspin glass in Sb-doped Ni50Mn38Ga12 Heusler alloys

    PubMed Central

    Tian, Fanghua; Cao, Kaiyan; Zhang, Yin; Zeng, Yuyang; Zhang, Rui; Chang, Tieyan; Zhou, Chao; Xu, Minwei; Song, Xiaoping; Yang, Sen

    2016-01-01

    A spontaneous exchange bias (SEB) discovered by Wang et al. [Phys. Rev. Lett. 106 (2011) 077203.] after zero-field cooling (ZFC) has attracted recent attention due to its interesting physics. In this letter, we report a giant SEB tuned by Sb-doping in Ni50Mn38Ga12-xSbx Heusler alloys. Such an SEB was switched on below the blocking temperature of approximately 50 K. The maximum exchange bias HE can arrive at 2930 Oe in a Ni50Mn38Ga10Sb2 sample after ZFC to 2 K. Further studies showed that this SEB was attributable to interaction of superspin glass (SSG) and antiferromagnetic matix, which was triggered by the crossover of SSG from canonical spin glass to a cluster spin glass. Our results not only explain the underlying physics of SEB, but also provide a way to tune and control the SEB performance. PMID:27478090

  6. Thermal stability and atomic ordering of epitaxial Heusler alloy Co{sub 2}FeSi films grown on GaAs(001)

    SciTech Connect

    Hashimoto, M.; Herfort, J.; Schoenherr, H.-P.; Ploog, K.H.

    2005-11-15

    The thermal stability and the atomic ordering of single-crystal Heusler alloy Co{sub 2}FeSi layers grown by molecular beam epitaxy on GaAs(001) have been studied. We found that the Co{sub 2}FeSi layers have a long-range atomic order and crystallize in a partly disordered L2{sub 1} structure in the low growth temperature (T{sub G}) regime. The long-range atomic order of the layers is further improved with increasing T{sub G} up to 350 deg. C. However, the increase of T{sub G} induces an interfacial reaction between the Co{sub 2}FeSi layer and the GaAs substrate. The analysis of the in-plane magnetic anisotropy reveals that the interface perfection is improved up to T{sub G}=200 deg. C and deteriorated due to an interfacial reaction above 200 deg. C.

  7. Lattice-matched magnetic tunnel junctions using a Heusler alloy Co2FeAl and a cation-disorder spinel Mg-Al-O barrier

    NASA Astrophysics Data System (ADS)

    Scheike, Thomas; Sukegawa, Hiroaki; Furubayashi, Takao; Wen, Zhenchao; Inomata, Koichiro; Ohkubo, Tadakatsu; Hono, Kazuhiro; Mitani, Seiji

    2014-12-01

    Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-Co2FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5 K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.

  8. Magnetization Dynamics Through Magnetoimpedance Effect in Isotropic Co2FeAl/Au/Co2FeAl Full-Heusler Alloy Trilayer Films

    NASA Astrophysics Data System (ADS)

    Assolin Corrêa, Marcio; Montardo Escobar, Vivian; Trigueiro-Neto, Osvaldo; Bohn, Felipe; Daiane Sossmeier, Kelly; Gomes Bezerra, Claudionor; Chesman, Carlos; Pearson, John; Hoffmann, Axel

    2013-09-01

    We investigate the magnetization dynamics in low damping parameter α systems by measuring the magnetoimpedance effect over a wide range of frequencies, from 0.1 to 3.0 GHz, in Co2FeAl/Au/Co2FeAl full-Heusler alloy trilayer films grown by magnetron sputtering on glass and MgO substrates. We show that the film produced on the glass substrate presents high magnetoimpedance performance, while that grown on the MgO substrate has low magnetoimpedance performance. Since both films are polycrystalline and have isotropic in-plane magnetic properties, we interpret the magnetoimpedance results in terms of the low damping parameter α and strain effects in the films. Thus, we verified that our films present good magnetoimpedance performance and showed that high performance can be achieved even in films with isotropic in-plane magnetic properties, since they present low damping parameter α.

  9. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films

    PubMed Central

    Tao, X. D.; Wang, H. L.; Miao, B. F.; Sun, L.; You, B.; Wu, D.; Zhang, W.; Oepen, H. P.; Zhao, J. H.; Ding, H. F.

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis. PMID:26733075

  10. Large anisotropic Fe orbital moments in perpendicularly magnetized Co2FeAl Heusler alloy thin films revealed by angular-dependent x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Okabayashi, Jun; Sukegawa, Hiroaki; Wen, Zhenchao; Inomata, Koichiro; Mitani, Seiji

    2013-09-01

    Perpendicular magnetic anisotropy (PMA) in Heusler alloy Co2FeAl thin films sharing an interface with a MgO layer is investigated by angular-dependent x-ray magnetic circular dichroism. Orbital and spin magnetic moments are deduced separately for Fe and Co 3d electrons. In addition, the PMA energies are estimated using the orbital magnetic moments parallel and perpendicular to the film surfaces. We found that PMA in Co2FeAl is determined mainly by the contribution of Fe atoms with large orbital magnetic moments, which are enhanced at the interface between Co2FeAl and MgO. Furthermore, element specific magnetization curves of Fe and Co are found to be similar, suggesting the existence of ferromagnetic coupling between Fe and Co PMA directions.

  11. Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, F. S.; Xiang, J. Y.; Hao, C. X.; Zhang, F.; Lv, Y. F.; Wang, W. H.; Hu, W. T.; Liu, Z. Y.

    2013-12-01

    The ultrathin films of Co2FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films.

  12. Chemical disorder determines the deviation of the Slater-Pauling rule for Fe2MnSi-based Heusler alloys: evidences from neutron diffraction and density functional theory

    NASA Astrophysics Data System (ADS)

    Tedesco, J. C. G.; Pedro, S. S.; Caraballo Vivas, R. J.; Cruz, C.; Andrade, V. M.; dos Santos, A. M.; Carvalho, A. M. G.; Costa, M.; Venezuela, P.; Rocco, D. L.; Reis, M. S.

    2016-11-01

    Fe2MnSi fails to follow the Slater-Pauling rule. This phenomenon is thought to originate from either: (i) an antiferromagnetic arrangement of Mn ions at low temperature and/or (ii) chemical disorder. An important insight on this issue could be achieved by considering Fe2MnSi1-x Ga x compounds, thoroughly studied here by means of magnetization, neutron diffraction and density functional calculations (DFT). Our results indicate that chemical disorder (and not the antiferromagnetic arrangement) is responsible for the deviation of the Slater-Pauling rule on Fe2MnSi-based Heusler alloys. Furthermore, evidences suggest that Ga substitution into Si site favors the Fe/Mn disorder, further enhancing the observed deviation.

  13. Giant spontaneous exchange bias triggered by crossover of superspin glass in Sb-doped Ni50Mn38Ga12 Heusler alloys

    NASA Astrophysics Data System (ADS)

    Tian, Fanghua; Cao, Kaiyan; Zhang, Yin; Zeng, Yuyang; Zhang, Rui; Chang, Tieyan; Zhou, Chao; Xu, Minwei; Song, Xiaoping; Yang, Sen

    2016-08-01

    A spontaneous exchange bias (SEB) discovered by Wang et al. [Phys. Rev. Lett. 106 (2011) 077203.] after zero-field cooling (ZFC) has attracted recent attention due to its interesting physics. In this letter, we report a giant SEB tuned by Sb-doping in Ni50Mn38Ga12-xSbx Heusler alloys. Such an SEB was switched on below the blocking temperature of approximately 50 K. The maximum exchange bias HE can arrive at 2930 Oe in a Ni50Mn38Ga10Sb2 sample after ZFC to 2 K. Further studies showed that this SEB was attributable to interaction of superspin glass (SSG) and antiferromagnetic matix, which was triggered by the crossover of SSG from canonical spin glass to a cluster spin glass. Our results not only explain the underlying physics of SEB, but also provide a way to tune and control the SEB performance.

  14. Tunable damping, saturation magnetization, and exchange stiffness of half-Heusler NiMnSb thin films

    NASA Astrophysics Data System (ADS)

    Dürrenfeld, P.; Gerhard, F.; Chico, J.; Dumas, R. K.; Ranjbar, M.; Bergman, A.; Bergqvist, L.; Delin, A.; Gould, C.; Molenkamp, L. W.; Åkerman, J.

    2015-12-01

    The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations from first principles to investigate how the composition of the epitaxially grown NiMnSb influences the magnetodynamic properties of saturation magnetization MS, Gilbert damping α , and exchange stiffness A . MS and A are shown to have a maximum for stoichiometric composition, while the Gilbert damping is minimum. We find excellent quantitative agreement between theory and experiment for MS and α . The calculated A shows the same trend as the experimental data but has a larger magnitude. In addition to the unique in-plane anisotropy of the material, these tunabilities of the magnetodynamic properties can be taken advantage of when employing NiMnSb films in magnonic devices.

  15. Electronic and magnetic properties of the Co2-based Heusler compounds under pressure: first-principles and Monte Carlo studies

    NASA Astrophysics Data System (ADS)

    Zagrebin, M. A.; Sokolovskiy, V. V.; Buchelnikov, V. D.

    2016-09-01

    Structural, magnetic and electronic properties of stoichiometric Co2 YZ Heusler alloys (Y  =  Cr, Fe, Mn and Z  =  Al, Si, Ge) have been studied by means of ab initio calculations and Monte Carlo simulations. The investigations were performed in dependence on different levels of approximations in DFT (FP and ASA modes, as well as GGA and GGA  +  U schemes) and external pressure. It is shown that in the case of the GGA scheme the half-metallic behavior is clearly observed for compounds containing Cr and Mn transition metals, while Co2FeZ alloys demonstrate the pseudo half-metallic behavior. It is demonstrated that an applied pressure and an account of Coulomb repulsion (U) lead to the stabilization of the half-metallic nature for Co2 YZ alloys. The strongest ferromagnetic inter-sublattice (Co–Y) interactions together with intra-sublattice (Co–Co and Y–Y) interactions explain the high values of the Curie temperature obtained by Monte Carlo simulations using the Heisenberg model. It is observed that a decrease in valence electrons of Y atoms (i.e. Fe substitution by Mn and Cr) leads to the weakening of the exchange interactions and to the reduction of the Curie temperature. Besides, in the case of the FP mode Curie temperatures were found in a good agreement with available experimental and theoretical data, where the latter were obtained by applying the empirical relation between the Curie temperature and the total magnetic moment.

  16. Electronic and magnetic properties of the Co2-based Heusler compounds under pressure: first-principles and Monte Carlo studies

    NASA Astrophysics Data System (ADS)

    Zagrebin, M. A.; Sokolovskiy, V. V.; Buchelnikov, V. D.

    2016-09-01

    Structural, magnetic and electronic properties of stoichiometric Co2 YZ Heusler alloys (Y  =  Cr, Fe, Mn and Z  =  Al, Si, Ge) have been studied by means of ab initio calculations and Monte Carlo simulations. The investigations were performed in dependence on different levels of approximations in DFT (FP and ASA modes, as well as GGA and GGA  +  U schemes) and external pressure. It is shown that in the case of the GGA scheme the half-metallic behavior is clearly observed for compounds containing Cr and Mn transition metals, while Co2FeZ alloys demonstrate the pseudo half-metallic behavior. It is demonstrated that an applied pressure and an account of Coulomb repulsion (U) lead to the stabilization of the half-metallic nature for Co2 YZ alloys. The strongest ferromagnetic inter-sublattice (Co-Y) interactions together with intra-sublattice (Co-Co and Y-Y) interactions explain the high values of the Curie temperature obtained by Monte Carlo simulations using the Heisenberg model. It is observed that a decrease in valence electrons of Y atoms (i.e. Fe substitution by Mn and Cr) leads to the weakening of the exchange interactions and to the reduction of the Curie temperature. Besides, in the case of the FP mode Curie temperatures were found in a good agreement with available experimental and theoretical data, where the latter were obtained by applying the empirical relation between the Curie temperature and the total magnetic moment.

  17. Basics and prospective of magnetic Heusler compounds

    NASA Astrophysics Data System (ADS)

    Felser, Claudia; Wollmann, Lukas; Chadov, Stanislav; Fecher, Gerhard H.; Parkin, Stuart S. P.

    2015-04-01

    Heusler compounds are a remarkable class of materials with more than 1000 members and a wide range of extraordinary multi-functionalities including halfmetallic high-temperature ferri- and ferromagnets, multi-ferroics, shape memory alloys, and tunable topological insulators with a high potential for spintronics, energy technologies, and magneto-caloric applications. The tunability of this class of materials is exceptional and nearly every functionality can be designed. Co2-Heusler compounds show high spin polarization in tunnel junction devices and spin-resolved photoemission. Manganese-rich Heusler compounds attract much interest in the context of spin transfer torque, spin Hall effect, and rare earth free hard magnets. Most Mn2-Heusler compounds crystallize in the inverse structure and are characterized by antiparallel coupling of magnetic moments on Mn atoms; the ferrimagnetic order and the lack of inversion symmetry lead to the emergence of new properties that are absent in ferromagnetic centrosymmetric Heusler structures, such as non-collinear magnetism, topological Hall effect, and skyrmions. Tetragonal Heusler compounds with large magneto crystalline anisotropy can be easily designed by positioning the Fermi energy at the van Hove singularity in one of the spin channels. Here, we give a comprehensive overview and a prospective on the magnetic properties of Heusler materials.

  18. Basics and prospective of magnetic Heusler compounds

    SciTech Connect

    Felser, Claudia Wollmann, Lukas; Chadov, Stanislav; Fecher, Gerhard H.; Parkin, Stuart S. P.

    2015-04-01

    Heusler compounds are a remarkable class of materials with more than 1000 members and a wide range of extraordinary multi-functionalities including halfmetallic high-temperature ferri- and ferromagnets, multi-ferroics, shape memory alloys, and tunable topological insulators with a high potential for spintronics, energy technologies, and magneto-caloric applications. The tunability of this class of materials is exceptional and nearly every functionality can be designed. Co{sub 2}-Heusler compounds show high spin polarization in tunnel junction devices and spin-resolved photoemission. Manganese-rich Heusler compounds attract much interest in the context of spin transfer torque, spin Hall effect, and rare earth free hard magnets. Most Mn{sub 2}-Heusler compounds crystallize in the inverse structure and are characterized by antiparallel coupling of magnetic moments on Mn atoms; the ferrimagnetic order and the lack of inversion symmetry lead to the emergence of new properties that are absent in ferromagnetic centrosymmetric Heusler structures, such as non-collinear magnetism, topological Hall effect, and skyrmions. Tetragonal Heusler compounds with large magneto crystalline anisotropy can be easily designed by positioning the Fermi energy at the van Hove singularity in one of the spin channels. Here, we give a comprehensive overview and a prospective on the magnetic properties of Heusler materials.

  19. Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

    SciTech Connect

    Furubayashi, T. Takahashi, Y. K.; Sasaki, T. T.; Hono, K.

    2015-10-28

    Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu{sub 52.4}Zn{sub 47.6} for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm{sup 2} for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hard disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/CuZn interfaces.

  20. Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

    NASA Astrophysics Data System (ADS)

    Furubayashi, T.; Takahashi, Y. K.; Sasaki, T. T.; Hono, K.

    2015-10-01

    Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co2Fe(Ga0.5Ge0.5) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu52.4Zn47.6 for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ.μm2 for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hard disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co2Fe(Ga0.5Ge0.5)/CuZn interfaces.

  1. Temperature-dependence of current-perpendicular-to-the-plane giant magnetoresistance spin-valves using Co2(Mn1-xFex)Ge Heusler alloys

    NASA Astrophysics Data System (ADS)

    Page, M. R.; Nakatani, T. M.; Stewart, D. A.; York, B. R.; Read, J. C.; Choi, Y.-S.; Childress, J. R.

    2016-04-01

    The properties of Co2(Mn1-xFex)Ge (CMFG) (x = 0-0.4) Heusler alloy magnetic layers within polycrystalline current-perpendicular-to-the plane giant magnetoresistance (CPP-GMR) spin-valves are investigated. CMFG films annealed at 220-320 °C exhibit partly ordered B2 structure with an order parameter SB2 = 0.3-0.4, and a lower SB2 was found for a higher Fe content. Nevertheless, CPP-GMR spin-valve devices exhibit a relatively high magnetoresistance ratio of ˜13% and a magnetoresistance-area product (ΔRA) of ˜6 mΩ μm2 at room temperature, which is almost independent of the Fe content in the CMFG films. By contrast, at low temperatures, ΔRA clearly increases with higher Fe content, despite the lower B2 ordering for increasing the Fe content. Indeed, first-principles calculations reveal that the CMFG alloy with a partially disordered B2 structure has a greater density of d-state at the Fermi level in the minority band compared to the Fe-free (Co2MnGe) alloy. This could explain the larger ΔRA measured on CMFG at low temperatures by assuming that s-d scattering mainly determines the spin asymmetry of resistivity as described in Mott's theory.

  2. Interface magnetism of Co{sub 2}FeGe Heusler alloy layers and magnetoresistance of Co{sub 2}FeGe/MgO/Fe magnetic tunnel junctions

    SciTech Connect

    Tanaka, M. A. Maezaki, D.; Ishii, T.; Okubo, A.; Mibu, K.; Hiramatsu, R.; Ono, T.

    2014-10-28

    The interface magnetism between Co{sub 2}FeGe Heusler alloy layers and MgO layers was investigated using {sup 57}Fe Mössbauer spectroscopy. Interface-sensitive samples, where the {sup 57}Fe isotope was used only for the interfacial atomic layer of the Co{sub 2}FeGe layer on the MgO layer, were prepared using atomically controlled alternate deposition. The {sup 57}Fe Mössbauer spectra of the interface-sensitive samples at room temperature were found similar to those of the bulk-sensitive Co{sub 2}FeGe films in which the {sup 57}Fe isotope was distributed throughout the films. On the other hand, the tunnel magnetoresistance effect of magnetic tunnel junctions with Co{sub 2}FeGe layers as the ferromagnetic electrodes showed strong reduction at room temperature. These results indicate that the strong temperature dependence of the tunneling magnetoresistance of magnetic tunnel junctions using Heusler alloy electrodes cannot be attributed simply to the reduction of the magnetization at the interfaces between the Heusler alloy and insulator layers.

  3. GMAG Dissertation Award Talk: Zero-moment Half-Metallic Ferrimagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Jamer, Michelle E.

    2015-03-01

    Low- and zero-moment half-metallic ferrimagnetic semiconductors have been proposed for advanced applications, such as nonvolatile RAM memory and quantum computing. These inverse-Heusler materials could be used to generate spin-polarized electron or hole currents without the associated harmful fringing magnetic fields. Such materials are expected to exhibit low to zero magnetic moment at room temperature, which makes them well-positioned for future spin-based devices. However, these compounds have been shown to suffer from disorder. This work focuses on the synthesis of these compounds and the investigation of their structural, magnetic, and transport properties. Cr2CoGa and Mn3Al thin films were synthesized by molecular beam epitaxy, and V3Al and Cr2CoAl were synthesized via arc-melting. Rietveld analysis was used to determine the degree of ordering in the sublattices as a function of annealing. The atomic moments were measured by X-ray magnetic circular and linear dichroism confirmed antiferromagnetic alignment of sublattices and the desired near-zero moment in several compounds. In collaboration with George E. Sterbinsky, Photon Sciences Directorate, Brookhaven National Laboratory; Dario Arena Photon Sciences Directorate, Brookhaven National Laboratory; Laura H. Lewis, Chemical Engineering, Northeastern University; and Don Heiman, Physics, Northeastern University. NSF-ECCS-1402738, NSF-DMR-0907007.

  4. Preparation of Co{sub 2}FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co{sub 2}FeSn magnetic tunnel junctions

    SciTech Connect

    Tanaka, M. A.; Ishikawa, Y.; Wada, Y.; Hori, S.; Murata, A.; Horii, S.; Yamanishi, Y.; Mibu, K.; Kondou, K.; Ono, T.; Kasai, S.

    2012-03-01

    To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co{sub 2}FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Moessbauer spectra clarify that Co{sub 2}FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250 deg. C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300 deg. C or greater. Fe/MgO/Co{sub 2}FeSn MTJs were prepared with the Co{sub 2}FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co{sub 2}FeSn layer grown at a substrate temperature of 250 deg. C showed tunnel magnetoresistance ratios of 72.2% and 43.5% at 2 K and 300 K, respectively.

  5. Neutron diffraction study of the martensitic transformation and chemical order in Heusler alloy Ni1.91Mn1.29Ga0.8

    DOE PAGESBeta

    Ari-Gur, Pnina; Garlea, Vasile O.; Cao, Huibo; Ge, Y.; Aaltio, I.; Hannula, S. P.; Koledov, V.

    2015-11-05

    In this study, Heusler alloys of Ni-Mn-Ga compositions demonstrate ferromagnetic shape memory effect in the martensitic state. The transformation temperature and the chemical order depend strongly on the composition. In the current work, the structure and chemical order of the martensitic phase of Ni1.91Mn1.29Ga0.8 were studied using neutron diffraction; the diffraction pattern was refined using the FullProf software. It was determined that the structural transition occurs around 330 K. At room temperature, 300 K, which is below the martensite transformation temperature, all the Bragg reflections can be described by a monoclinic lattice with a symmetry of space group P 1more » 2/m 1 and lattice constants of a = 4.23047(7) [Å], b = 5.58333(6) [Å], c = 21.0179(2) [Å], beta = 90.328(1). The chemical order is of critical importance in these alloys, and it was previously studied at 363 K. Analysis of the neutron diffraction in the monoclinic phase shows that the chemical order is maintained during the martensitic transformation.« less

  6. Large spontaneous exchange bias and giant magnetoresistance in Ni50Mn37-xFexIn13(x=2-4) Heusler alloys

    NASA Astrophysics Data System (ADS)

    Jing, Chao; Liu, Yang; Zheng, Dong; Wang, Xiaolong; Sun, Junkun; Zhang, Yuanlei; Liu, Changqin; Deng, Dongmei; Feng, Zhenjie; Xu, Kun; Li, Zhe

    2016-09-01

    In the present work, we have obtained a large zero-field cooled exchange-bias (spontaneous exchange bias, SEB) in Ni50Mn35Fe2In13 Heusler alloy. The experimental results indicate that the sample with x=2 exhibits super-spin glass (SSG), super-paramagnetic (SPM), super-ferromagnetic (SFM) and antiferromagnetic (AFM) behaviors in the martensite state at low temperature. Contributing to the complex magnetic interactions, a large SEB effect with the value of 1567 Oe was obtained at 5 K. At the same time, a non-monotonic behavior of spontaneous exchange bias field (spontaneous HEB) was observed with the variation of temperature, which is resulted from the competition between the volume fraction of SFM clusters and the exchange coupling of the SFM-AFM interface. In addition, during martensitic transformation (MT), extraordinary electrical transport properties of Ni50Mn37-xFexIn13 (x=2-4) alloys have been observed under various external magnetic field. The maximal value of the giant magnetoresistance (GMR) reaches about 57% at 135 K under the external magnetic field change of 50 kOe. The effect of field induced reverse martensitic transformation (FIRMT) on the GMR has been also discussed.

  7. The effect of Pd on martensitic transformation and magnetic properties for Ni50Mn38-xPdxSn12Heusler alloys

    NASA Astrophysics Data System (ADS)

    Jing, C.; Zheng, D.; Li, Z.; Yu, L. J.; Zhang, Y. L.; Liu, Y.; Sun, J. K.; Liu, C. Q.; Deng, D. M.; Yang, W. T.

    2016-05-01

    In the past decade, Mn rich Ni-Mn based alloys have attained considerable attention due to their abundant physics and potential application as multifunctional materials. In this paper, polycrystalline Ni50Mn38-xPdxSn12 (x = 0, 2, 4, 6) Heusler alloys have been prepared, and the martensitic phase transformation (MPT) together with the shape memory effect and the magnetocaloric effect has been investigated. The experimental result indicates that the MPT evidently shifts to a lower temperature with increase of Pd substitution for Mn atoms, which can be attributed to the weakness of the hybridization between the Ni atom and excess Mn on the Sn site rather than the electron concentration. The physics properties study focused on the sample of Ni50Mn34Pd4Sn12 shows a good two-way shape memory behavior, and the maximum value of strain Δ L/L reaches about 0.13% during the MPT. The small of both entropy change Δ ST and magnetostrain can be ascribed to the inconspicuous influence of magnetic field induced MPT.

  8. Intrinsic half-metallicity in fractal carbon nitride honeycomb lattices.

    PubMed

    Wang, Aizhu; Zhao, Mingwen

    2015-09-14

    Fractals are natural phenomena that exhibit a repeating pattern "exactly the same at every scale or nearly the same at different scales". Defect-free molecular fractals were assembled successfully in a recent work [Shang et al., Nature Chem., 2015, 7, 389-393]. Here, we adopted the feature of a repeating pattern in searching two-dimensional (2D) materials with intrinsic half-metallicity and high stability that are desirable for spintronics applications. Using first-principles calculations, we demonstrate that the electronic properties of fractal frameworks of carbon nitrides have stable ferromagnetism accompanied by half-metallicity, which are highly dependent on the fractal structure. The ferromagnetism increases gradually with the increase of fractal order. The Curie temperature of these metal-free systems estimated from Monte Carlo simulations is considerably higher than room temperature. The stable ferromagnetism, intrinsic half-metallicity, and fractal characteristics of spin distribution in the carbon nitride frameworks open an avenue for the design of metal-free magnetic materials with exotic properties.

  9. Structure, magnetic properties and electrical resistivity of Co2FeSi1-xGax Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Ramudu, M.; Raja, M. Manivel; Chelvane, J. Arout; Kamat, S. V.

    2016-11-01

    The influence of Ga on the structural, magnetic and half-metallic properties of Co2FeSi1-xGax (0≤x≤1) thin films grown on Si (100) substrates using ultra high vacuum magnetron sputtering has been systematically investigated. The linear increase in cubic lattice parameter from 5.63 Å to 5.73 Å and the Curie temperature (TC) from 854 K to 941 K with x varying from 0 to 1 indicate the progressive substitution of Ga for Si. The coercivity (Hc) was found to decrease from 26 Oe (x=0) to 3 Oe (x=1) at room temperature and is attributed to the decrease in magnetic anisotropy. The magnetic hysteresis loops measured from 300-873 K revealed that the film where Ga completely replaces Si exhibit better stability in both saturation magnetization (Ms) and Hc with temperature. The increase in coercivity at higher temperatures is attributed to the film to substrate interaction. The measured Ms at 100 K decreases from 5.01 μB/f.u. (x=0) to 4.49 μB/f.u. (x=1) and follows the trend of Slater-Pauling rule. The indirect evidence of half-metallic nature is examined from the temperature dependent electrical resistivity measurements.

  10. Thermoelectric properties of the Heusler-type Fe{sub 2}VTa{sub x}Al{sub 1−x} alloys

    SciTech Connect

    Renard, Krystel Mori, Arinori; Yamada, Yuichiro; Tanaka, Suguru; Nishino, Yoichi; Miyazaki, Hidetoshi

    2014-01-21

    This study focuses on the thermoelectric properties of the Heusler-type Fe{sub 2}VTa{sub x}Al{sub 1−x} alloys (0≤x≤0.12). By means of Rietveld analyses on synchrotron X-ray diffraction patterns, it is shown that the Ta atoms enter sites occupied by V atoms in the stoichiometric Fe{sub 2}VAl alloy, while the ejected V atoms are transferred to the vacant Al sites. This Ta substitution leads to an improvement of the n-type thermoelectric properties owing to two mechanisms. On the one hand, the atoms position in the structure leads to an off-stoichiometric effect such as already observed in V-rich Fe{sub 2}V{sub 1+y}Al{sub 1−y} compounds: the Seebeck coefficient is increased towards negative absolute values and the electrical resistivity is decreased, with a large shift of their peak temperature towards higher temperature. The maximum power factor is 6.5 × 10{sup −3} W/mK{sup 2} for x = 0.05 at 340 K. On the other hand, the heavy element Ta substitution combined with this off-stoichiometric effect leads to a large decrease of the thermal conductivity, owing to an increase of the scattering events. Consequently, the dimensionless figure of merit is seen to reach higher values than for the Fe{sub 2}V{sub 1+y}Al{sub 1−y} alloys, i.e., 0.21–0.22 around 400–500 K for x = 0.05 and 500 K for x = 0.08.

  11. Spin Tunneling in Ferromagnetic and Half-metallic Junctions.

    NASA Astrophysics Data System (ADS)

    Bratkovsky, Alexander

    1998-03-01

    Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface states, and inelastic contribution to a tunnel magnetoresistance (TMR). Direct tunneling in iron group systems leads to about a 30% change in resistance, which is close to observed values. It is shown that the larger observed values of the tunnel TMR might be a result of tunneling involving surface polarized states. We find that a tunneling via resonant defect states in the barrier radically decreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunnel diode structure would give the TMR of about 8%. (A.M. Bratkovsky, Phys. Rev. B 56), 2344 (1997). With regards to the inelastic tunneling it is interesting to note an opposite role of magnons and phonons: one-magnon emission generally results in a spin mixing and, consequently, reduces the TMR, whereas phonons tend to enhance the TMR. Inclusion of phonons allows to reasonably fit an unusual bias dependence of the TMR. The model applies qualitatively to half-metallics with 100% spin polarization, where one-magnon processes are suppressed and the change in resistance in the absence of spin-mixing on impurities may be arbitrarily large. Even in the case of imperfect magnetic configurations the resistance change can be a few 1000 percent.^1 Examples of the half-metallic systems which could operate at room temperature are CrO_2/TiO2 and CrO_2/RuO_2, and an account of their peculiar band structures is presented. Implications and relation to a CMR materials which are close to the half-metallic behavior are discussed.

  12. Memory and Spin Injection Devices Involving Half Metals

    DOE PAGESBeta

    Shaughnessy, M.; Snow, Ryan; Damewood, L.; Fong, C. Y.

    2011-01-01

    We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

  13. Magnetic properties of Ni40+xMn39-xSn21 (x = 0, 2, 4, 6 and 8 at.%) Heusler alloys

    SciTech Connect

    Lázpita, P.; Barandiarán, J. M.; Chernenko, V. A.; Valle García, B.; Díaz Tajada, E.; Lograsso, T.; Schlagel, D. L.

    2014-05-01

    The low electron concentration region (e/a < 7.75) of the magnetic phase diagram of the off-stoichiometric Ni–Mn–Sn Heusler alloys was investigated in detail by DSC and magnetization measurements of the Ni40+xMn39-xSn21(x = 0, 2, 4, 6 and 8 at.%) alloys. The alloys show a stable austenitic phase without any martensitic transformation down to 5 K even after heat treatment. The Curie temperature exhibits a broad maximum over a large composition range. The evolution of the magnetic moment with the electron concentration fits the data of previous studies and confirms the peak-like dependence in the extended range of e/a values predicted by ab initio calculations. Finally, the explored part of the moment versus e/a curve can be explained in terms of a localized magnetic moment model and full atomic order in the alloys.

  14. Impact of excess iron on the calculated electronic and magnetic properties of Co{sub 3–x}Fe{sub x}Si Heusler-compound

    SciTech Connect

    Debbichi, M.; Hamad, B.

    2014-09-14

    Ab initio density functional calculations are performed on the Co{sub 3–x}Fe{sub x}Si alloys with variable iron composition (1≤x≤3). The evolution of the structural, electronic, and magnetic properties is investigated within different levels of approximations. These alloys crystallize in cubic Heusler structures, which evolve from the regular L2₁ structure for Co₂FeSi to the inverse X structure for x≥2. Using on-site Coulomb interactions of U{sub eff}(Co)=3.07 eV and U{sub eff}(Fe)=3.4 eV is found to describe consistently the experimental properties for x≤2. A good agreement between calculated and experimental magnetic moments is found for the cubic inverse Heusler phases without the addition of Hubbard-model. The spin polarization is found to range from 1 for Fe concentrations of x≤2, indicating the half-metallic character, to –0.29 at x=3.

  15. Direct observation of the electronic structure in thermoelectric half-Heusler alloys Zr{sub 1−x}M{sub x}NiSn (M = Y and Nb)

    SciTech Connect

    Hattori, Kengo; Miyazaki, Hidetoshi Yoshida, Kento; Inukai, Manabu; Nishino, Yoichi

    2015-05-28

    This study investigates the electronic and local crystal structures of the hole-doped Zr{sub 1−x}Y{sub x}NiSn and electron-doped Zr{sub 1−x}Nb{sub x}NiSn alloys using synchrotron radiation photoemission spectroscopy (SR-PES) and synchrotron radiation X-ray powder diffraction (SR-XRD) measurements, thereby clarifying the mechanisms underlying the thermoelectric performance of the p- and n-type alloys. SR-XRD analysis reveals an interstitial Ni disorder in the half-Heusler structure and the substitution of the dopant Y and Nb atoms at the Zr site. SR-PES result shows that the variation in the electronic structure of the alloys due to doping can be explained on the basis of the rigid band model. The asymmetric pseudo-gap near the Fermi level, which is rather unexpected from the band structure calculation because of the presence of the interstitial Ni disorder, could possibly be the reason underlying poor thermoelectric performance of p-type half-Heusler ZrNiSn alloys when compared with the n-type counterparts.

  16. Pressure-magnetic field induced phase transformation in Ni{sub 46}Mn{sub 41}In{sub 13} Heusler alloy

    SciTech Connect

    Rama Rao, N. V. Manivel Raja, M.; Pandian, S.; Esakki Muthu, S.; Arumugam, S.

    2014-12-14

    The effect of hydrostatic pressure and magnetic field on the magnetic properties and phase transformation in Ni{sub 46}Mn{sub 41}In{sub 13} Heusler alloy was investigated. Pressure (P)-magnetic field (H)-temperature (T) phase diagram has been constructed from experimental results. In the P–T contour of the phase diagram, the slope of the austenite-martensite phase boundary line appears positive (dT/dP > 0), while it appears negative (dT/dH < 0) in the H–T contour. The results revealed that pressure and magnetic field have opposite effect on phase stabilization. The combined effect of pressure and magnetic field on martensitic transition has led to two important findings: (i) pressure dependent shift of austenite start temperature (A{sub s}) is higher when larger field is applied, and (ii) field dependent shift of A{sub s} is lowered when a higher pressure is applied. The pressure and magnetic field dependent shift observed in the martensitic transformation has been explained on the basis of thermodynamic calculations. Curie temperature of the phases was found to increase with pressure at a rate of 0.6 K/kbar.

  17. Disorder-induced localization and itinerant magnetism in the Half-Heusler alloys and dilution studies of the beta-titanium tin and barium boride compounds

    NASA Astrophysics Data System (ADS)

    Drymiotis, Fivos

    We present experimental results of magnetization, resistance and specific heat, on single crystals of several Half Heusler alloys. In particular we focus on the 18 valence electrons TiCoSb and TiNiSn and their evolution from their non magnetic ground state to the metallic TiFeSb, VCoSb and TiCoSn. Contrary to previous experimental results we find the ground state of TiCoSb to be metallic but driven to semiconducting through disorder induced localization. In all samples studied we find that the semiconductor to metal transition occurs concurrently with a lattice parameter change. Ferromagnetic ordering appears to occur only if the Stoner criterion is satisfied and long range ordering occurs even in the presence of localizes states. The transport behavior of all samples depends on the dimensional ratio WB corresponding to the ratio of the extent of localization to the bandwidth. Experimental results are also presented on the beta-Ti 6Sn5 compound which according to magnetization and specific heat measurements is very close to ferromagnetic instability. Ferromagnetic ordering occurs after minute amounts of doping with certain elements (La, Ce, Pr, Sm, Co) on the Ti site. Large values of the critical temperatures are observed which do not scale with the dopant dilution concentration. Experimental evidence is also presented on the existence of a ferromagnetic ground state for BaB6 and La doped BaB6.

  18. Molecular-beam epitaxy of Co2MnSi Heusler alloy thin films epitaxially grown on Si(0 0 1)

    NASA Astrophysics Data System (ADS)

    Stephan, R.; Dulot, F.; Mehdaoui, A.; Berling, D.; Wetzel, P.

    We report on the investigation of structural and magnetic properties of the ternary Heusler alloy Co2MnSi grown on Si(0 0 1) by molecular-beam epitaxy. Low-energy electron diffraction (LEED), inelastic medium-energy electron diffraction (IMEED) and X-ray photoelectron diffraction (XPD) measurements clearly show the growth of crystalline Co2MnSi. The best crystallographic and magnetic quality of the Co2MnSi films have been achieved after codeposition of the three Co, Mn and Si elements on the Si(0 0 1) substrate held at 587 K. Quantitative determinations of magnetic anisotropies were performed using transverse bias initial inverse susceptibility and torque measurements (TBIIST). Co2MnSi reveals to have an in-plane fourfold magnetocrystalline anisotropy with easy axis along <0 1 0> directions for evaporation fluxes perpendicular to the substrate surface. On the other hand, grazing-incidence fluxes invariably generate a dominant uniaxial in-plane magnetic anisotropy contribution with easy axis perpendicular to the incidence plane.

  19. Predicting Pathways for Synthesis of Ferromagnetic τ Phase in Binary Heusler Alloy Al-55 pct Mn Through Understanding of the Kinetics of ɛ-τ Transformation

    NASA Astrophysics Data System (ADS)

    Palanisamy, Dhanalakshmi; Singh, Shailesh; Srivastava, Chandan; Madras, Giridhar; Chattopadhyay, Kamanio

    2016-09-01

    This paper outlines the detailed procedure for the synthesis of pure ferromagnetic τ phase in binary Heusler Al-55 pct Mn alloy in bulk form through casting route without any addition of stabilizers. To obtain the processing domain for the formation of the τ phase from high-temperature ɛ phase, isothermal transformation experiments were carried out. The structure and microstructure were characterized by X-ray diffraction and electron microscopy studies. The τ phase start times were obtained through magnetic measurements. In order to tune the casting conditions for the formation of this phase, thermal modeling was carried out to predict the heat extraction rates for copper molds of different diameters (2 to 12 mm) containing hot solids during casting process. This enabled us to estimate the diameter of the mold to be used for obtaining τ phase directly during casting. It was concluded through experimental verification that 10-mm-diameter casting in copper mold is suitable to obtain complete τ phase. A saturation magnetization of 116 emu/g at 10 K was measured for such samples. The Curie point for the τ phase was found to be 668 K (395 °C). Additionally, the cast rod exhibits a compressive strength of 1170 MPa which is higher than those of both ferrites and AlNiCo magnets.

  20. Assisted tunneling in ferromagnetic junctions and half-metallic oxides

    NASA Astrophysics Data System (ADS)

    Bratkovsky, A. M.

    1998-05-01

    Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a 30% change in resistance, which is close but lower than experimentally observed values. The larger observed values of the TMR might be a result of tunneling involving surface polarized states. It is found that tunneling via resonant defect states in the barrier radically decreases the TMR by order of magnitude. One-magnon emission is shown to reduce the TMR, whereas phonons increase the effect. The inclusion of both magnons and phonons reasonably explains an unusual bias dependence of the TMR. The model presented here is applied qualitatively to half metallics with 100% spin polarization, where one-magnon processes are suppressed and the change in resistance in the absence of spin mixing on impurities may be arbitrarily large. Even in the case of imperfect magnetic configurations, the resistance change can be a few 1000%. Examples of half-metallic systems are CrO2/TiO2 and CrO2/RuO2.

  1. Half-metallicity in aluminum-doped zigzag silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Dong, Yao-Jun; Wang, Xue-Feng; Vasilopoulos, P.; Zhai, Ming-Xing; Wu, Xue-Mei

    2014-03-01

    The spin-dependent electronic structures of aluminum-(Al) doped zigzag silicene nanoribbons (ZSiNRs) are investigated by first-principles calculations. When ZSiNRs are substitutionally doped by a single Al atom on different sites in every three primitive cells, they become half-metallic in some cases, a property that can be used in spintronic devices. More interestingly, spin-down electrons can be transported at the Fermi energy when the Al atom is placed on the sub-edge site. In contrast, spin-up electrons can be transported at the Fermi energy when the ZSiNRs are doped on sites near their centre. The magnetic moment on the edge is considerably suppressed if the Al atom is doped on edge or near-edge sites. Similar results are obtained for a phosphorus-(P) and boron-(B) doped ZSiNR. When two or more Si atoms are replaced by Al atoms, in general the half-metallic behaviour is replaced by a metallic, spin gapless semiconducting or semiconducting one. When a line of six Si atoms, along the ribbon's width, are replaced by Al atoms, the spin resolution of the band structure is suppressed and the system becomes nonmagnetic.

  2. Half-Metallic Properties of MnC

    NASA Astrophysics Data System (ADS)

    Fong, C. Y.; Yang, L. H.; Pask, J. E.; Pickett, W. E.

    2003-03-01

    MnC in the zincblende structure is predicted to be half-metallic in the range of lattice constants 4.13-4.28 Ang., based on ab initio density functional calculations using the generalized gradient approximation to exchange and correlation. The equilibrium lattice constant is predicted to be 4.35 Ang.. The magnetic moment is 1.0 Bohr magneton. In contrast to the well known half-metallic compound, CrAs, it is the minority spin states which is metallic while the majority spin states are semiconducting with a gap of 1.30eV. This basic difference with respect to CrAs can be understood in terms of greatly differing p-d hybridization and exchange splitting. We discuss the density of states of MnC and suggest cubic Si(x)C(1-x) with x<0.5 as a possible substrate, to form a spintronic material well-suited to operation under high pressure.

  3. Thermoelectric performance of nanostructured p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnxhalf-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Makongo, Julien P.A.; Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F.P.

    2013-06-01

    Several compositions of the p-type half-Heusler alloys Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx (0≤x≤0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Z₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 μW/K² m at 775 K) and the lowest lattice thermal conductivity (~2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb₀.₉₉Sn₀.₀₁ bulk matrix. - Graphical abstract: CoSb nanoinclusions embedded into a p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx half-Heusler matrix simultaneously boost the thermopower and carrier mobility leading to a drastic enhancement of the power factor of the resulting bulk nanostructured materials. Highlights: • The phase composition of half-Heusler (HH) alloy is very sensitive

  4. Can binary sp half-metallic ferromagnets maintain half-metallicity when they form superlattices? A first-principles approach

    NASA Astrophysics Data System (ADS)

    Dong, Shengjie; Song, Xiao-Sheng; Zhao, Hui

    2014-03-01

    With the help of recent advanced progress in thin film deposition techniques such as molecular beam epitaxy and the ability to exactly control the growth of semiconductor materials, motivated by recent experimental facts of synthesizing much thicker superlattices than pure CrAs such as CrAs/GaAs on GaAs substrates [44], encouraged by many similarities between binary 3d and sp half-metallic ferromagnets, we introduce the superlattice engineering for achieving the possible sp HM materials with ordered structure. Based on first-principles density functional calculations, taking (/( (M=Sr or Ba; X=N, P, or As; Y=Al, Ga, or In) superlattices with zinc-blende structure in the (001) direction as example, we investigate the structural, electronic, and magnetic properties of superlattices embodying sp HM materials as well as answer the question posed in the title. We hope that, these half-metallic ferromagnetic superlattices, at least some of them, could be useful in spintronics.

  5. Acceleration of ordering transformation of a new Fe{sub 2}(Mn,Cr)Si Heusler-alloy film by very high frequency plasma irradiation process during radio frequency sputter deposition

    SciTech Connect

    Yoshimura, S.; Kobayashi, H.; Egawa, G.; Saito, H.; Ishida, S.

    2011-04-01

    A new Heusler alloy, Fe{sub 2}(Mn,Cr)Si, that is likely to have high spin polarization (P) and high damping constant ({alpha}) was proposed to obtain high magneto-resistance ratio and low spin torque noise in a magnetic read head with a current-perpendicular-to-plane (CPP) giant magneto-resistance (GMR) multilayer. A very high frequency (VHF) plasma irradiation process during radio frequency (RF) sputter deposition was investigated to form the highly ordered structure of the Heusler alloy film with low thermal treatment temperature. The main results are as follows: (1) P and magnetic moment of Fe{sub 2}(Mn{sub 0.5}Cr{sub 0.5})Si with an L2{sub 1} structure were estimated at 0.99 and 2.49 {mu}{sub B}/f.u., respectively, and {alpha} was also estimated to be larger compared with the case of Co{sub 2}MnSi, according to density of states (DOS) calculations. (2) The ordering (at least B2 structure) temperature of Fe{sub 2}(Mn{sub 0.6}Cr{sub 0.4})Si film decreased from 500 to 300 deg. C by using the VHF plasma irradiation process with optimized condition. (3) The surface roughness of Fe{sub 2}(Mn{sub 0.6}Cr{sub 0.4})Si film also reduced from 1.7 to 0.5 nm by using the VHF plasma irradiation process. It is found that the Fe{sub 2}(Mn,Cr)Si Heusler alloy and the VHF plasma irradiation process with optimized condition seems to be applicable for fabrication of high-performance magnetic read head with CPP-GMR device.

  6. Determination of the magnetic ground state in the martensite phase of Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys by nonlinear AC susceptibility.

    PubMed

    Umetsu, R Y; Fujita, A; Ito, W; Kanomata, T; Kainuma, R

    2011-08-17

    DC and AC magnetic measurements were carried out to clarify the difference in the magnetic ground state depending on the kinds of Z element used in the martensite phase in Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys. Magnetic field cooling effects were observed in the DC thermomagnetization curves in the low temperature regions, and a frequency dependence on AC susceptibility was also observed in both real and imaginary parts of the susceptibility. Negative divergence was clearly observed in nonlinear AC susceptibility only for the Ni(50)Mn(40)Sb(10) alloy, suggesting that the magnetic feature of its ground state is the spin-glass state. The magnetic ground state of the martensite phase in these alloys would relate to the magnetic configuration of the Mn atoms in the ferromagnetic austenite phase.

  7. Half-metallic ferromagnetism and electronic structures in zinc blende YC: The first-principles calculations

    NASA Astrophysics Data System (ADS)

    Wu, Qiao; Wang, Zhonglong; Fan, Shuaiwei; Yao, Kailun

    2014-11-01

    Applying the first-principles with the generalized gradient approximation and the modified Becke and Johnson potential plus the generalized gradient approximation potential as exchange correlation potential, the electronic structures, half-metallicity and the cohesive energy for hypothetical zinc blende YC compound are calculated. Obtained results show that the zinc blende YC is typical half-metallic with a large half-metallic gap of 0.67(2) eV and magnetic moment of 1.00 μB per molecule. Magnetic moments mainly come from the p orbital of C atom, where p-d hybridization mechanism plays a dominating role in the formation of half-metallicity. The relatively stable ferromagnetic ground state, large half-metallic gap, the robust half-metallicity with respect to the lattice constant compression, and negative cohesive energy indicate zinc blende YC would be a promising half metallic ferromagnet.

  8. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    PubMed

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  9. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    PubMed

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-30

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  10. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  11. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    PubMed Central

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  12. The First Principles Calculation of Structural, Electronic and Magnetic Properties of MnXY (x = Ru, rh and Y = Ga, Ge, Sb) Alloys

    NASA Astrophysics Data System (ADS)

    Moniri, S. M.; Nourbakhsh, Z.; Mostajabodaavati, M.

    The structural, electronic and magnetic properties of MnXY (X = Ru, Rh and Y = Ga, Ge, Sb) Heusler alloys are studied using density functional theory by the WIEN2k package. These materials are ferromagnetic. Also they have some interesting half-metallic properties. The electron density of states, total and local magnetic moment of these alloys are calculated. We have calculated the effective Coulomb interaction Ueff using the ab initio method. We have compared the magnetic moments of these alloys in GGA and LDA+U with the Slater-Pauling rule. Furthermore the effect of hydrostatic pressure on the magnetic moment of these alloys is studied. The calculated results are fitted with a second order polynomial.

  13. Atomic disorder and the magnetic, electrical, and optical properties of a Co{sub 2}CrAl Heusler alloy

    SciTech Connect

    Svyazhin, A. D. Shreder, E. I.; Voronin, V. I.; Berger, I. F.; Danilov, S. E.

    2013-03-15

    Two Co{sub 2}CrAl alloy samples subjected to different heat treatment regimes are studied. An exact distribution of atoms over the sublattices in the samples is determined by X-ray diffraction and neutron diffraction methods. These data are used to perform ab initio density of states calculations and to calculate the magnetic moments of the samples in a coherent potential approximation. The calculated magnetic moments are compared to the experimental values. The effect of atomic ordering on the electronic structure near the Fermi level is analyzed using optical methods. The possible causes of the detected temperature dependence of the electrical resistivity, unusual for metallic alloys, are discussed.

  14. Co1.5 Fe1.5 Ge and Co2 MnSi Half-Metal Magnetic behavior tested by spin-resolved photoemission and ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Andrieu, Stéphane

    2015-03-01

    In a magnetic spin-valve or tunnel junction, a crucial parameter to get both large magnetoresistance (MR) and a good Spin Transfer Torque (STT) efficiency is the spin-polarization of the magnetic electrodes. So-called ``Half-Metallic'' Magnetic (HMM) materials are of interest for such devices due to the existence of a spin-gap at the Fermi level for minority spins. Recently, MR enhancements have been observed by different groups on Co2-xFe1 +xGe and Co2MnSi Heusler materials, suggesting HMM behavior. A second consequence of that minority spin gap is that very low magnetic damping is expected. Combining both properties in a device is a challenge for decreasing the critical current necessary to switch the magnetization using STT. Up to now, many Heusler alloys are claimed to get this HMM property, but direct demonstration using spin-resolved photoemission is often missing. Here we focus on 2 systems, (i) Co1.5Fe1.5Ge for which a significant increase of the GMR was observed in spin valves, and (ii) Co2MnSi for which very large TMR values were observed in MgO-based MTJs. The Co1.5Fe1.5Ge and Co2MnSi(001) films (noted CFG and CMS) were prepared by Molecular Beam Epitaxy coupled to the Spin-Resolved PhotoEmission (SR-PES) set-up on CASSIOPEE beamline at SOLEIL synchrotron. The L21 chemical ordering was confirmed in CFG films by using anomalous diffraction on SIXS beamline at SOLEIL. However, SR-PES experiments did not show any HMM behavior on our CFG films. Similar PES experiments performed on CMS showed that the minority spin density of states (DOS) drops down to zero at -0.4eV below EF, leading to a 100% spin polarization. However, we also observed an increase of the minority spin DOS at EF, not predicted by ab initio calculations on the bulk structure. The spin-gap is thus decreased due to the surface symmetry breaking. We will show however that this spin-gap can be enlarged when finishing the surface by 1 Mn atomic plane, or when covering with the MgO barrier

  15. Ab initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets

    NASA Astrophysics Data System (ADS)

    Şaşıoğlu, Ersoy; Galanakis, Iosif; Friedrich, Christoph; Blügel, Stefan

    2013-10-01

    Correlation effects play an important role in the electronic structure of half-metallic (HM) magnets. In particular, they give rise to nonquasiparticle states above (or below) the Fermi energy at finite temperatures that reduce the spin polarization and, as a consequence, the efficiency of spintronics devices. Employing the constrained random-phase approximation (cRPA) within the full-potential linearized augmented-plane-wave (FLAPW) method using maximally localized Wannier functions, we calculate the strength of the effective on-site Coulomb interaction (Hubbard U and Hund exchange J) between localized electrons in different classes of HM magnets considering: (i) sp-electron ferromagnets in rock-salt structure, (ii) zinc-blende 3d binary ferromagnets, as well as (iii) ferromagnetic and ferrimagnetic semi- and full-Heusler compounds. For HM sp-electron ferromagnets, the calculated Hubbard U parameters are between 2.7 and 3.9 eV, while for transition-metal-based HM compounds, they lie between 1.7 and 3.8 eV, being smallest for MnAs (Mn-3d orbitals) and largest for Cr2CoGa (Co-3d orbitals). For the HM full-Heusler compounds, the Hubbard U parameters are comparable to the ones in elementary 3d transition metals, while for semi-Heusler compounds, they are slightly smaller. We show that the increase of the Hubbard U with structural complexity, i.e., from MnAs to Cr2CoGa, stems from the screening of the p electrons of the nonmagnetic sp atoms. The p-electron screening turns out to be more efficient for MnAs than for Cr2CoGa. The calculated Hubbard U parameters for CrAs, NiMnSb, and Co2MnSi are about two times smaller than previous estimates based on the constrained local-density approximation (cLDA) method. Furthermore, the width of the correlated d or p bands of the studied compounds is usually smaller than the calculated Hubbard U parameters. Thus these HM magnets should be classified as weakly correlated materials.

  16. Determination of the normal and anomalous hall effect coefficients in ferromagnetic Ni{sub 50}Mn{sub 35}In{sub 15-x}Si{sub x} Heusler alloys at the martensitic transformation

    SciTech Connect

    Granovskii, A. B. Prudnikov, V. N.; Kazakov, A. P.; Zhukov, A. P.; Dubenko, I. S.

    2012-11-15

    The magnetization, the electrical resistivity, the magnetoresistance, and the Hall resistivity of Ni{sub 50}Mn{sub 35}In{sub 15-x}Si{sub x} (x = 1.0, 3.0, 4.0) Heusler alloys are studied at T = 80-320 K. The martensitic transformation in these alloys occurs at T = 220-280 K from the high-temperature ferromagnetic austenite phase into the low-temperature martensite phase having a substantially lower magnetization. A method is proposed to determine the normal and anomalous Hall effect coefficients in the presence of magnetoresistance and a possible magnetization dependence of these coefficients. The resistivity of the alloys increases jumpwise during the martensitic transformation, reaches 150-200 {mu}{Omega} cm, and is almost temperature-independent. The normal Hall effect coefficient is negative, is higher than that of nickel by an order of magnitude at T = 80 K, decreases monotonically with increasing temperature, approaches zero in austenite, and does not undergo sharp changes in the vicinity of the martensitic transformation. At x = 3, a normal Hall effect nonlinear in magnetization is detected in the immediate vicinity of the martensitic transformation. The temperature dependences of the anomalous Hall effect coefficient in both martensite and austenite and, especially, in the vicinity of the martensitic transformation cannot be described in terms of the skew scattering, the side jump, and the Karplus-Lutinger mechanisms from the anomalous Hall effect theory. The possible causes of this behavior of the magnetotransport properties in Heusler alloys are discussed.

  17. Development of spin-gapless semiconductivity and half metallicity in Ti2MnAl by substitutions for Al

    NASA Astrophysics Data System (ADS)

    Lukashev, Pavel; Gilbert, Simeon; Staten, Bradley; Hurley, Noah; Fuglsby, Ryan; Kharel, Parashu; Huh, Yung; Valloppilly, Shah; Zhang, Wenyong; Yang, K.; Sellmyer, David J.

    In recent years, ever increasing interest in spin-based electronics has resulted in the search for a new class of materials that can provide a high degree of spin polarized electron transport. An ideal candidate would act like insulator for one spin channel and a conductor or semiconductor for the opposite spin channel (e.g., half metal (HM), spin-gapless semiconductor (SGS)). Here, we present the combined computational, theoretical, and experimental study of Ti2MnAl, a Heusler compound with potential application in the field of spintronics. We show that in the ground state this material is metallic, however it becomes a SGS when 50% of Al is substituted with In (e.g., Ti2MnAl0.5In0.5) , and a HM when 50% of Al is substituted with Sn (e.g., Ti2MnAl0.5Sn0.5) . Detailed study of the structural, electronic, and magnetic properties of these materials is presented. Financial support: DOE/BES (DE-FG02-04ER46152); NSF NNCI: 1542182; NRI; Academic and Scholarly Excellence Funds, Office of Academic Affairs, SDSU; UNI Faculty Summer Fellowship; Program for Outstanding Innovative Talents in Hohai University.

  18. Tunable damping in the Heusler compound Co2 -xIrxMnSi

    NASA Astrophysics Data System (ADS)

    Köhler, Albrecht; Wollmann, Lukas; Ebke, Daniel; Chadov, Stanislav; Kaiser, Christian; Diao, Zhitao; Zheng, Yuankai; Leng, Qunwen; Felser, Claudia

    2016-03-01

    Here we report on the realization of tuning the intrinsic damping in the half-metallic Heusler compound Co2MnSi by substituting Co by Ir. The work includes theoretical calculations and experimental measurements on bulk and thin films samples. Control of damping is to remove unwanted magnetization motion and suppress signal echoes through uncontrolled precession of the magnetization for future implementation of this material into, e.g., current perpendicular plane-giant-magnetoresistance sensors. Density functional calculations revealed stable magnetization and increasing damping parameter with Iridium concentration, whereas the half metallicity could be retained. The calculations are consistent with experimental results from bulk and thin film samples of this report and elucidate the linear dependence of the Gilbert damping parameter on the substituent concentration. This report again demonstrates the inherent tunability of Heusler compounds, which constitutes a pivotal feature of this material class.

  19. Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in half-Heusler and Heusler limits.

    PubMed

    Do, Dat T; Mahanti, S D; Pulikkoti, Jiji J

    2014-07-01

    Half-Heusler and Heusler compounds have been of great interest for several decades for thermoelectric, magnetic, half-metallic and many other interesting properties. Among these systems, Zr-Ni-Sn compounds are interesting thermoelectrics which can go from semiconducting half-Heusler (HH) limit, ZrNiSn, to metallic Heusler (FH) limit, ZrNi2Sn. Recently Makongo et al (2011 J. Am. Chem. Soc. 133 18843) found that dramatic improvement in the thermoelectric power factor of HH can be achieved by putting excess Ni into the system. This was attributed to an energy filtering mechanism due to the presence of FH nanostructures in the HH matrix. Using density functional theory we have investigated clustering and nanostructure formation in ZrNi1+xSn (0 ⩽ x ⩽ 1) systems near the HH (x = 0) and FH (x = 1) ends and have found that excess Ni atoms in HH tend to stay close to each other and form nanoclusters. On the other hand, there is competing interaction between Ni-vacancies occupying different sites in FH which prevents them from forming vacancy nanoclusters. Effects of nano-inclusions on the electronic structure near HH and FH ends are discussed.

  20. Quaternary Heusler compounds Co(2-x)Rh(x)MnZ (Z = Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties.

    PubMed

    Alijani, Vajiheh; Winterlik, Juergen; Fecher, Gerhard H; Naghavi, S Shahab; Chadov, Stanislav; Gruhn, Thomas; Felser, Claudia

    2012-02-01

    Within the huge family of Heusler compounds only a few quaternary derivatives are known that crystallize in the F43m space group. In this work, the yet unreported compounds CoRhMnZ (Z = Ga, Sn, Sb) and the alloy Co(0.5)Rh(1.5)MnSb were investigated in detail by experimental techniques and theoretical methods. The ab initio calculations predict the CoRhMnZ compounds to be half-metallic ferromagnets or to be close to the half-metallic ferromagnetic state. Calculations of the elastic constants show that the cubic structure is stable in compounds containing Mn. Both calculations and experiment reveal that Mn cannot be exchanged by Fe (CoRhFeGa). The low temperature magnetization of the compounds is in the range of 3.4-5.5 μ(B) depending on the composition. The best agreement between experiment and calculation has been achieved for CoRhMnSn (5 μ(B)). The other compounds are also cubic but tend to anti-site disorder. Compared to Co(2)MnSn it is interesting to note that the magnetic properties and half-metallicity are preserved when replacing one of the 'magnetic' Co atoms by a 'non-magnetic' Rh atom. This allows us to increase the spin-orbit interaction at one of the lattice sites while keeping the properties as a precondition for applications and physical effects relying on a large spin-orbit interaction. The Curie temperatures were determined from measurements in induction fields of up to 1 T by applying molecular field fits respecting the applied field. The highest Curie temperature was found for CoRhMnSn (620 K) that makes it, together with the other well defined properties, attractive for above room temperature spintronic applications.

  1. Coupled magnetostructural transition in Ni-Mn-V-Ga Heusler alloys and its effect on the magnetocaloric and transport properties

    NASA Astrophysics Data System (ADS)

    Devarajan, U.; Kannan, M.; Thiyagarajan, R.; Manivel Raja, M.; Rama Rao, N. V.; Singh, Sanjay; Venkateshwarlu, D.; Ganesan, V.; Ohashi, M.; Arumugam, S.

    2016-02-01

    In the present work, the magnetocaloric and transport properties of Ni2.2Mn0.72-x V x Ga1.08 (x  =  0.0, 0.04, 0.08, 0.12) magnetic shape memory alloys are investigated. The alloys show a coupled magnetostructural transition from paramagnetic austenite to ferromagnetic martensite in a composition range of 0  ⩽  x  ⩽  0.08. For higher V substitution (x  =  0.12), the martensite transition is lower than the conventional ferromagnetic transition. Large magnetic entropy change values of about 12.4, 16.2 and 19 J kg-1 K-1 and corresponding refrigeration capacities of 60.6, 82.5, and 103 J kg-1 were observed for x  =  0, 0.04 and 0.08 alloys, respectively. The above two parameters linearly increase with increasing magnetic field. The indirect adiabatic temperature change calculated from the heat capacity measurement is found to be at its maximum for x  =  0.12 at H  =  8 T. The magnetoresistance is observed to increase from 0% (x  =  0.12) to 28% (x  =  0) at the maximum field of 8 T. The Sommerfeld coefficients are almost the same for the parent and a V-doped sample, which reveals a low free electron density, and the Debye coefficients decrease with an increase in V doping, confirming the phenomenon of electron-phonon scattering. The critical exponents at second order magnetic transition for x  = 0.12 are calculated as β  =  0.482, γ  =  1.056, δ  =  3.021, which agrees closely with mean field theory.

  2. Thermoelectric performance of nanostructured p-type Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx half-Heusler alloys

    NASA Astrophysics Data System (ADS)

    Maji, Pramathesh; Makongo, Julien P. A.; Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F. P.

    2013-06-01

    Several compositions of the p-type half-Heusler alloys Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx (0≤x≤0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 μW/K2 m at 775 K) and the lowest lattice thermal conductivity (˜2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr0.5Hf0.5Co0.4Rh0.6Sb0.99Sn0.01 bulk matrix.

  3. Large anisotropy of spin polarization in Heusler alloy Ni2MnGa induced by martensitic transformation

    NASA Astrophysics Data System (ADS)

    Zhu, Z. Y.; Zhang, H. W.; Xu, S. F.; Chen, J. L.; Cao, Z. X.; Wu, G. H.

    2008-05-01

    Spin polarization both in the cubic austenitic and tetragonal martensitic phases of the Ni2MnGa alloy has been investigated using first-principles calculations combined with classical Bloch-Boltzmann transport theory. It is shown that the degree of spin polarization, while decreasing from 42% in the ⟨001⟩ directions of the austenitic phase to 30% in the [100] direction of the martensitic phase, rises to 75% in the [001] direction of the martensitic phase, resulting from a preferential reconstruction of the spin-down Fermi surfaces upon martensitic transformation. With this finding, various recent intriguing electrical measurements upon Ni2MnGa across the martensitic transformation can find an explanation. This also opens a way of searching for giant magnetoresistance materials.

  4. Electronic and magnetic properties of zinc blende half-metal superlattices

    NASA Astrophysics Data System (ADS)

    Fong, C. Y.; Qian, M. C.; Pask, J. E.; Yang, L. H.; Dag, S.

    2004-01-01

    Zinc blende half-metallic compounds such as CrAs, with large magnetic moments and high Curie temperatures, are promising materials for spintronic applications. We explore layered materials, consisting of alternating layers of zinc blende half-metals, by first principles calculations, and find that superlattices of (CrAs)1(MnAs)1 and (CrAs)2(MnAs)2 are half-metallic with magnetic moments of 7.0μB and 14.0μB per unit cell, respectively. We discuss the nature of the bonding and half-metallicity in these materials and, based on the understanding acquired, develop a simple expression for the magnetic moment in such materials. We explore the range of lattice constants over which half-metallicity is manifested, and suggest corresponding substrates for growth in thin film form.

  5. Magnetic properties of full-Heusler alloy Co{sub 2}Fe{sub 1-x}Mn{sub x}Al films grown by molecular-beam epitaxy

    SciTech Connect

    Meng, K. K.; Wang, S. L.; Xu, P. F.; Chen, L.; Zhao, J. H.; Yan, W. S.

    2010-12-06

    We have investigated magnetic properties of single-crystalline full-Heusler alloy Co{sub 2}Fe{sub 1-x}Mn{sub x}Al films (0

  6. Micromagnetic simulation of spin-transfer switching in a full-Heusler Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} alloy spin-valve nanopillar

    SciTech Connect

    Huang, H. B.; Ma, X. Q.; Liu, Z. H.; Meng, F. Y.; Xiao, Z. H.; Wu, P. P.; Shi, S. Q.; Chen, L. Q.

    2011-08-01

    We investigated the spin-transfer switching in a full-Heusler Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} alloy spin-valve nanopillar through micromagnetic simulation. A two-step switching hysteresis loop due to the fourfold in-plane magnetocrystalline anisotropy of Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layers was obtained. The simulation explains the experimental result of the resistance versus current hysteresis loop and yields good agreement with the measured critical current. Furthermore, the magnetization trajectory and magnetization distribution were shown and analyzed to elucidate the different characters of two-step switching.

  7. 〈001〉 textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy

    SciTech Connect

    Du, Ye; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Furubayashi, T.; Hono, K.

    2013-11-11

    The orientation dependence of current-perpendicular-to-plane giant-magnetoresistance (CPP-GMR) was investigated by fabricating 〈001〉 textured polycrystalline pseudo spin valves (PSVs) with Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layers and a Ag spacer. The PSV with 10 nm CFGG annealed at 400 °C exhibited the resistance-change area product (ΔRA) of 5.8 mΩ (MR ratio of 16%), the largest value reported for polycrystalline CPP-(P)SVs. The 〈001〉 textured CFGG PSV outperforms the 〈011〉 textured CFGG PSV possibly due to the reduced lattice mismatch or improved band matching at the CFGG/Ag interface.

  8. High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields

    SciTech Connect

    Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A.; Gotardo, R. A. M.; Viana, D. S. F.; Garcia, D.; Eiras, J. A.

    2014-09-21

    Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

  9. Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd

    NASA Astrophysics Data System (ADS)

    Bae, Taejin; Ko, Jungho; Lee, Sangho; Cha, Jongin; Hong, Jongill

    2016-01-01

    Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0 nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

  10. Defects in CrAs and related compounds as a route to half-metallic ferrimagnetism

    NASA Astrophysics Data System (ADS)

    Galanakis, I.; Özdoǧan, K.; Şaşıoǧlu, E.; Aktaş, B.

    2006-10-01

    Half-metallic ferrimagnetism is crucial for spintronic applications with respect to ferromagnets due to the lower stray fields created by these materials. Studying the effect of defects in CrAs and related transition-metal chalcogenides and pnictides crystallizing in the zinc-blende structure, we reveal that excess of the transition-metal atoms leads to half-metallic ferrimagnetism. The surplus of these atoms are antiferromagnetically coupled to the transition-metal atoms at the perfect lattice sites. The needed condition to achieve half-metallic ferrimagnetism is to prevent the migration of the sp atoms to other sites and atomic swaps.

  11. Spin-polarized ballistic transport in a thin superlattice of zinc blende half-metallic compounds

    NASA Astrophysics Data System (ADS)

    Qian, M. C.; Fong, C. Y.; Pickett, W. E.; Pask, J. E.; Yang, L. H.; Dag, S.

    2005-01-01

    We examine theoretically ballistic conduction in thin layers of zinc blende half metals, considering as an example a superlattice consisting of monolayers of GaAs and MnAs, a bilayer of CrAs, and a bilayer of GaAs. By artificially separating bilayers, we show that surface states thwart half metallicity. However, capping the metal-As bilayers restores half metallicity, and ballistic conduction of electrons within ˜0.3eV of the Fermi level will give nearly 100% spin-polarized transmission in the direction of the superlattice. Recent developments suggest atomic layer epitaxy can be used to produce such thin layers for spintronic applications.

  12. Theoretical investigations of electronic structure and magnetism in Zr2CoSn full-Heusler compound

    NASA Astrophysics Data System (ADS)

    Birsan, A.; Kuncser, V.

    2015-08-01

    The half-metallic properties of a new and promising full-Heusler compound, Zr2CoSn, are investigated by means of ab initio calculations within the Density Functional Theory framework. It was shown that the ferromagnetic ordered Hg2CuTi-type crystal structure is energetically the most favorable for this compound. The total magnetic moment is 3 μB/f.u. and follows a typical Slater-Pauling dependence. The half metallicity disappears if the unit cell volume is contracted by more than 5%.

  13. Improved half-metallic gap of zincblende half-metal superlattices with the Tran-Blaha modified Becke-Johnson density functional

    NASA Astrophysics Data System (ADS)

    Guo, San-Dong

    2016-08-01

    Binary transition-metal pnictides and chalcogenides half-metallic ferromagnetic materials with zincblende structure, being compatible with current semiconductor technology, can be used to make high-performance spintronic devices. Here, we investigate electronic structures and magnetic properties of composite structure ((CrX)2 /(YX)2 (X=As, Sb; Se, Te and Y=Ga; Zn) superlattices) of zincblende half-metallic ferromagnetism and semiconductor by using Tran and Blaha's modified Becke and Johnson (mBJ) exchange potential. Calculated results show that they all are half-metallic ferromagnets with both generalized gradient approximation (GGA) and mBJ, and the total magnetic moment per formula unit follows a Slater-Pauling-like "rule of 8". The key half-metallic gaps by using mBJ are enhanced with respect to GGA results, which is because mBJ makes the occupied minority-spin p-bands move toward lower energy, but toward higher energy for empty minority-spin Cr-d bands. When the spin-orbit coupling (SOC) is included, the spin polarization deviates from 100%, and a most reduced polarization of 98.3% for (CrSb)2 /(GaSb)2, which indicates that SOC has small effects, of the order of 1%, in the considered four kinds of superlattice.

  14. Strain modulating half-metallicity of semifluorinated GaN nanosheets

    NASA Astrophysics Data System (ADS)

    Xiao, Meixia; Ao, Zhimin; Xu, Tianhan; He, Cheng; Song, Haiyang; Wang, Lei

    2016-06-01

    Strain-dependent half-metallicity of two-bilayer GaN nanosheets (NSs) with fluorinated Ga atoms is studied using density-functional theory. Our results demonstrate that the band gaps in spin-up states and half-metallic gaps vary with biaxial strain and uniaxial compressive strain along the zigzag direction, while the metallic behaviors in spin-down states remain regardless of strain. However, biaxial strain has a better effect on the half-metallicity. Semifluorinated GaN NSs may undergo a structural phase transition from wurtzite to graphite-like phase at high biaxial tension. Therefore, biaxial strain tuning half-metallicity efficiently could provide a viable route to GaN-based spintronic nanodevices.

  15. Stability of ferromagnetism in the half-metallic pnictides and similar compounds: a first-principles study

    NASA Astrophysics Data System (ADS)

    Sasioglu, E.; Galanakis, I.; Sandratskii, L. M.; Bruno, P.

    2005-06-01

    Based on first-principles electron structure calculations and employing the frozen-magnon approximation, we study the exchange interactions in a series of transition-metal binary alloys crystallizing in the zinc-blende structure and calculate the Curie temperature within both the mean-field approximation and random-phase approximation. We study two Cr compounds, CrAs and CrSe, and four Mn compounds, MnSi, MnGe, MnAs and MnC. MnC, MnSi and MnGe are isovalent to CrAs and MnAs is isoelectronic to CrSe. Ferromagnetism is particular stable for CrAs, MnSi and MnGe: all three compounds show Curie temperatures around 1000 K. On the other hand, CrSe and MnAs show a tendency to antiferromagnetism when compressing the lattice. In MnC the half-metallic gap is located in the majority-spin channel, in contrast to the other five compounds. The large half-metallic gaps, very high Curie temperatures, the stability of the ferromagnetism with respect to the variation of the lattice parameter and a coherent growth on semiconductors make MnSi and CrAs the most promising candidates for use in spintronics devices.

  16. Realization of multifunctional shape-memory ferromagnets in all-d-metal Heusler phases

    SciTech Connect

    Wei, Z. Y.; Liu, E. K. Chen, J. H.; Xi, X. K.; Zhang, H. W.; Wang, W. H.; Wu, G. H.; Li, Y.; Liu, G. D.; Luo, H. Z.

    2015-07-13

    Heusler ferromagnetic shape-memory alloys (FSMAs) normally consist of transition-group d-metals and main-group p-elements. Here, we report the realization of FSMAs in Heusler phases that completely consist of d metals. By introducing the d-metal Ti into NiMn alloys, cubic B2-type Heusler phase is obtained and the martensitic transformation temperature is decreased efficiently. Strong ferromagnetism is established by further doping Co atoms into the B2-type antiferromagnetic Ni-Mn-Ti austenite. Based on the magnetic-field-induced martensitic transformations, collective multifunctional properties are observed in Ni(Co)-Mn-Ti alloys. The d metals not only facilitate the formation of B2-type Heusler phases but also establish strong ferromagnetic coupling and offer the possibility to tune the martensitic transformation.

  17. New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

    NASA Astrophysics Data System (ADS)

    Fong, C. Y.; Qian, M. C.

    2004-12-01

    The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC.

  18. Conditions for spin-gapless semiconducting behavior in Mn{sub 2}CoAl inverse Heusler compound

    SciTech Connect

    Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.; Blügel, S.

    2014-03-07

    Employing ab initio electronic structure calculations, we investigate the conditions for spin-gapless semiconducting (SGS) behavior in the inverse Mn{sub 2}CoAl Heusler compound. We show that tetragonalization of the lattice, which can occur during films growth, keeps the SGS character of the perfect cubic compound. On the contrary, atomic swaps even between sites with different local symmetry destroy the SGS character giving rise to a half-metallic state. Furthermore, the occurrence of Co-surplus leads also to half-metallicity. Thus, we propose that in order to achieve SGS behavior during the growth of Mn{sub 2}CoAl (and similar SGS Heusler compounds) thin films, one should minimize the occurrence of defects, while small deformations of the lattice, due to the lattice mismatch with the substrate, do not play a crucial role.

  19. Exchange interactions, spin waves, and Curie temperature in zincblende half-metallic sp-electron ferromagnets: the case of CaZ (Z = N, P, As, Sb).

    PubMed

    Laref, A; Saşioglu, E; Galanakis, I

    2011-07-27

    Using first-principle calculations in conjunction with the frozen-magnon technique we have calculated the exchange interactions and spin-wave dispersions in the series of the zincblende half-metallic II-V (CaZ, Z = N, P, As, Sb) ferromagnets. The calculated exchange constants are used to estimate the Curie temperature within the random phase approximation. The large Stoner gap in these alloys gives rise to well-defined undamped spin waves throughout the Brillouin zone. Moreover we show that the spin-wave stiffness constants for the considered systems are among the largest available for local moment ferromagnets. The predicted Curie temperature of half-metallic CaN is noticeably higher than the room temperature with respect to the other compounds, and thus we propose CaN as a promising candidate for future applications in spintronic devices.

  20. Neutron diffraction study of the martensitic transformation and chemical order in Heusler alloy Ni1.91Mn1.29Ga0.8

    SciTech Connect

    Ari-Gur, Pnina; Garlea, Vasile O.; Cao, Huibo; Ge, Y.; Aaltio, I.; Hannula, S. P.; Koledov, V.

    2015-11-05

    In this study, Heusler alloys of Ni-Mn-Ga compositions demonstrate ferromagnetic shape memory effect in the martensitic state. The transformation temperature and the chemical order depend strongly on the composition. In the current work, the structure and chemical order of the martensitic phase of Ni1.91Mn1.29Ga0.8 were studied using neutron diffraction; the diffraction pattern was refined using the FullProf software. It was determined that the structural transition occurs around 330 K. At room temperature, 300 K, which is below the martensite transformation temperature, all the Bragg reflections can be described by a monoclinic lattice with a symmetry of space group P 1 2/m 1 and lattice constants of a = 4.23047(7) [Å], b = 5.58333(6) [Å], c = 21.0179(2) [Å], beta = 90.328(1). The chemical order is of critical importance in these alloys, and it was previously studied at 363 K. Analysis of the neutron diffraction in the monoclinic phase shows that the chemical order is maintained during the martensitic transformation.

  1. Comparing magnetostructural transitions in Ni50Mn18.75Cu6.25Ga25 and Ni49.80Mn34.66In15.54 Heusler alloys

    NASA Astrophysics Data System (ADS)

    Dubenko, Igor; Granovsky, Alexander; Lahderanta, Erkki; Kashirin, Maxim; Makagonov, Vladimir; Aryal, Anil; Quetz, Abdiel; Pandey, Sudip; Rodionov, Igor; Samanta, Tapas; Stadler, Shane; Mazumdar, Dipanjan; Ali, Naushad

    2016-03-01

    The crystal structure, magnetic and transport properties, including resistivity and thermopower, of Ni50Mn18.75Cu6.25Ga25 and Ni49.80Mn34.66In15.54 Heusler alloys were studied in the (10-400) K temperature interval. We show that their physical properties are remarkably different, thereby pointing to different origin of their magnetostructural transition (MST). A Seebeck coefficient (S) was found to pass minimum of about -20 μV/K in respect of temperature for both compounds. It was shown that MST observed for both compounds results in jump-like changes in S for Ga-based compound and jump in resistivity of about 20 and 200 μΩ cm for Ga and In -based compounds, respectively. The combined analyzes of the present results with that from literature show that the density of states at the Fermi level does not change strongly at the MST in the case of Ni-Mn-In alloys as compared to that of Ni-Mn-Ga.

  2. Magnetic and chemical order-disorder transformations in Co2Fe(Ga1-xSix) and Co2Fe(Al1-ySiy) Heusler alloys

    NASA Astrophysics Data System (ADS)

    Umetsu, Rie Y.; Okubo, Akinari; Kainuma, Ryosuke

    2012-04-01

    The concentration dependence of the order-disorder phase transformation temperature from the L21 to the B2 phase (TtL21/B2) and magnetic properties of Co2Fe(Ga1-xSix) and Co2Fe(Al1-ySiy) Heusler alloys were investigated. In the phase diagrams, a crossover of the Curie temperature (TC) and TtL21/B2 was confirmed at around y = 0.45 in Co2Fe(Al1-ySiy), whereas the TC and TtL21/B2 monotonically changed with x in Co2Fe (Ga1-xSix). The slopes of the linear concentration dependence of TtL21/B2 for Co2Fe(Al1-ySiy) drastically changed at about y = 0.45, suggesting that the chemical interchange energy between Fe and Al in Co2FeAl alloy is affected by the magnetic ordering.

  3. Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

    SciTech Connect

    Alhuwaymel, Tariq F.; Carpenter, Robert; Yu, Chris Nga Tung; Kuerbanjiang, Balati; Lazarov, Vlado K.; Abdullah, Ranjdar M.; El-Gomati, Mohamed; Hirohata, Atsufumi

    2015-05-07

    In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

  4. Half metallicity and magnetic properties of CrO2 doped with Ti, Sn or Ru

    NASA Astrophysics Data System (ADS)

    Yuan, C.; Lu, Z.; Liu, S.; Gan, Z.; Guo, F.; Xiong, R.; Mei, X.; Liu, H.; Shi, J.

    2016-11-01

    It is possible to stabilize CrO2 internally by doping with element such as Ti, Sn or Ru which has stable rutile structured oxide. However, the half metallicity and magnetic properties of CrO2 may also change when doped with different elements. In this study, by using first principle method, the electronic structure and magnetic properties of CrO2 doped with different amounts and different types (Ti, Sn or Ru) of dopants were studied. It was found that when doped with Ti or Sn, the half metallicity of CrO2 will keep intact even at very high dopant concentration, while for Ru-doped CrO2, the half metallicity will only be maintained at low Ru concentration. Besides, the half metallicity of Ru-doped CrO2 also depends on the relative positions of Ru atoms - the half metallicity may be destroyed even at low Ru concentration if two Ru ions are very close to each other. The magnetic properties of doped CrO2 also show dependence on dopant concentration and dopant type. The magnetocrystalline anisotropy (MAC) of Ru-doped is found to be very sensitive to both Ru concentration and relative positions of Ru atoms. Large MAC may be induced by Ru doping.

  5. Spin-state transition induced half metallicity in a cobaltate from first principles

    NASA Astrophysics Data System (ADS)

    Ou, Xuedong; Fan, Fengren; Li, Zhengwei; Wang, Hongbo; Wu, Hua

    2016-02-01

    Half metal is a promising spintronic material. Here, we explore, using first principles calculations, a spin-state transition induced half metallicity in a layered cobaltate via a physical or chemical pressure. Our exemplary first principles study shows that the layered cobaltate Sr2CoO3F would undergo a transition, under a pressure of 5.4 GPa, from a high-spin antiferromagnetic insulator to an intermediate-spin ferromagnetic half-metal. The former phase is associated with a superexchange in a Mott insulator, and the latter one is due to a broad band formation and a kinetic energy gain of the partially occupied eg orbital. Note that the above transition could also be induced by a chemical pressure via doping in (Sr1-xCax)2CoO3F (x > 0.3). This work suggests that a cobaltate would be of a particular interest if stabilized into an intermediate-spin state.

  6. Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides.

    PubMed

    Nakamura, Kohji; Kato, Yoshinori; Akiyama, Toru; Ito, Tomonori; Freeman, A J

    2006-02-01

    To investigate half-metallic exchange bias interfaces, magnetic structures at ferromagnetic (FM)/antiferromagnetic (AFM) interfaces in the zinc blende transition-metal chalcogenides, and with compensated and uncompensated AFM interfaces, were determined by the full-potential linearized augmented plane-wave method. With the uncompensated AFM interface, an antiparallel alignment of the Cr and Mn moments induces an excellent half-metallicity. More striking still, in the compensated AFM interface the Cr moments in the FM layer lie perpendicular to the Mn moments in the AFM layer but the Mn moments strongly cant to induce a net moment so as to retain the half-metallicity. These findings may offer a key ingredient for exchange biased spintronic devices with 100% spin polarization, having a unidirectional anisotropy to control and manipulate spins at the nanoscale.

  7. GW study of the local field effect in half metallic CrAs

    NASA Astrophysics Data System (ADS)

    Damewood, Liam; Fong, Ching

    2010-03-01

    We determined the semiconducting gap of zinc blende (ZB) CrAs within the GW approximation (GWA). This is the first GW calculation of a half-metal. Previous calculations using density functional theory within the generalized gradient approximation (GGA) determined a gap of 1.8 eV, but the GGA is known to give too small of a value for this quantity in semiconductors. Additionally, we studied the role of the local field effect in CrAs. Due to the simultaneous metallic and insulating properties of half metals, the screening in CrAs is weaker compared to insulating screening. Preliminary results suggest that half metallic screening increases the semiconducting gap as much as 0.54 eV from the fully insulating value of 1.92 eV.

  8. Large Magnetization and Reversible Magnetocaloric Effect at the Second-Order Magnetic Transition in Heusler Materials.

    PubMed

    Singh, Sanjay; Caron, Luana; D'Souza, Sunil Wilfred; Fichtner, Tina; Porcari, Giacomo; Fabbrici, Simone; Shekhar, Chandra; Chadov, Stanislav; Solzi, Massimo; Felser, Claudia

    2016-05-01

    In contrast to rare-earth-based materials, cheaper and more environmentally friendly candidates for cooling applications are found within the family of Ni-Mn Heusler alloys. Initial interest in these materials is focused on the first-order magnetostructural transitions. However, large hysteresis makes a magnetocaloric cycle irreversible. Alternatively, here it is shown how the Heusler family can be used to optimize reversible second-order magnetic phase transitions for magnetocaloric applications. PMID:26928954

  9. Large Magnetization and Reversible Magnetocaloric Effect at the Second-Order Magnetic Transition in Heusler Materials.

    PubMed

    Singh, Sanjay; Caron, Luana; D'Souza, Sunil Wilfred; Fichtner, Tina; Porcari, Giacomo; Fabbrici, Simone; Shekhar, Chandra; Chadov, Stanislav; Solzi, Massimo; Felser, Claudia

    2016-05-01

    In contrast to rare-earth-based materials, cheaper and more environmentally friendly candidates for cooling applications are found within the family of Ni-Mn Heusler alloys. Initial interest in these materials is focused on the first-order magnetostructural transitions. However, large hysteresis makes a magnetocaloric cycle irreversible. Alternatively, here it is shown how the Heusler family can be used to optimize reversible second-order magnetic phase transitions for magnetocaloric applications.

  10. Observation of strong ferromagnetism in the half-Heusler compound CoTiSb system

    NASA Astrophysics Data System (ADS)

    Sedeek, K.; Hantour, H.; Makram, N.; Said, Sh. A.

    2016-06-01

    Strong ferromagnetism has been detected in the semiconducting half-Heusler CoTiSb compound. The synthesis process was carried out by direct fusion of highly pure Co, Ti, and Sb in an evacuated quartz tube. The structural, micro structural and magnetic properties were investigated. The crystal structure was refined from X-ray powder diffraction data by the Rietveld method. Applying the search match program, three nano-crystalline phases of CoTiSb, Ti3Sb and CoTi2 (50%, 33.3% and 16.7% respectively) were identified for the prepared system. The term "phase" is used to address the co-existence of different stable chemical composition for the same half-Heusler alloy. The scanning electron microscope SEM and the high resolution transmission electron microscope HR-TEM were applied to characterize the morphology, size, shape, crystallinity and lattice spacing. A mixture of ordered and disordered arrangement was detected. Well defined nano-crystalline structure with an average interatomic distance equals 0.333 nm and sharp diffraction spots were measured. Contrary to this, the HR-TEM and electron diffraction image shows distorted structured planes and smeared halo surrounded by weak rings. Thermo-magnetic measurements (M-T) have been measured between 640 °K and 920 °K. Clear magnetic phase transition is detected above 900 °K (Tc), in addition to a second possible phase transition (TFF) around 740 °K. The latter is clarified by plotting ΔM/ΔT vs. T. To determine the type of the detected phase transitions, the field dependence of magnetization was measured at 300 °K and 740 °K. Arrot plots (M2-H/M) confirm the ferromagnetic character at both temperatures. It may be reasonable to assume the TFF transition as an additional ferromagnetic contribution stemming from some sort of exchange interactions. A tentative magnetic phase diagram is given. Overall, the present results suggest that the prepared multiphases CoTiSb system does not obey the 18 valence electron/unit cell

  11. Half-metallic properties in rocksalt and zinc-blende M N ( M=Na, K): A first-principles study

    NASA Astrophysics Data System (ADS)

    Yan, E.

    2012-03-01

    Pseudopotentials and plane-wave basis set method is used to investigate the electronic structure and magnetic properties for state-of-the-art zinc-blende and rocksalt M N ( M=K, Na) alloys. We find that these compounds exhibit half-metallic characters with an integer magnetic moment of 2.00μB. The half-metallic properties result from a fully spin-polarization of s and p states. The origin of energy gap mainly comes from the hybridization both s and p states. Total energies calculations indicate the rocksalt phase is lower in energy than the zinc-blende one. The difference of total energy are about 0.035 Ry per formula unit for KN and NaN, respectively. For these compounds, Slater-Pauling curve Mt=(Zt-4) (in μB unit) is obeyed between valence electrons and total magnetic moment. Meanwhile, we also find the preservation of half metallic characters when the lattice parameter is moderate compressed.

  12. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si /SiO2 Substrates

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Inomata, Koichiro; Mitani, Seiji

    2014-08-01

    We study polycrystalline B2-type Co2FeAl (CFA) full-Heusler-alloy-based magnetic tunnel junctions (MTJs) fabricated on a Si /SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface are achieved by using a MgO buffer layer. A tunnel magnetoresistance ratio up to 175% is obtained for a MTJ with a CFA /MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer-torque-induced magnetization switching is achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. By using a thermal activation model, the intrinsic critical current density (Jc0) is determined to be 8.2×106 A /cm2, which is lower than 2.9×107 A /cm2, the value for epitaxial CFA MTJs [Appl. Phys. Lett. 100, 182403 (2012), 10.1063/1.4710521]. We find that the Gilbert damping constant (α) evaluated by using ferromagnetic resonance measurements for the polycrystalline CFA film is approximately 0.015 and is almost independent of the CFA thickness (2-18 nm). The low Jc0 for the polycrystalline MTJ is mainly attributed to the low α of the CFA layer compared with the value in the epitaxial one (approximately 0.04).

  13. Crystal orientation dependence of current-perpendicular-to-plane giant magnetoresistance of pseudo spin-valves with epitaxial Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy layers

    SciTech Connect

    Chen, Jiamin; Hono, K.; Li, Songtian; Furubayashi, T. Takahashi, Y. K.

    2014-06-21

    The magnetoresistive (MR) properties of Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy-based current-perpendicular-to-plane giant magnetoresistance pseudo-spin-valves (PSVs) are investigated. The PSV films are epitaxially grown on a sapphire (112{sup ¯}0) substrate with an Ag or Cu spacer layer, and their magnetoresistive properties are compared with those of PSV grown on MgO(001) substrates. For substrates with an Ag spacer, the PSV with the (001)[110]{sub CFGG}//(001)[010]{sub Ag} interface grown on MgO(001) exhibits a higher MR output compared with the (110)[001]{sub CFGG}//(111)[11{sup ¯}0]{sub Ag} interface grown on sapphire (112{sup ¯}0). In contrast, a higher MR output is obtained using a Cu spacer with the (110)[001]{sub CFGG}//(111)[11{sup ¯}0]{sub Cu} interface. These results demonstrate that the MR outputs depend upon the crystal orientation at the interface, and that interfaces with a small misfit tend to exhibit a larger MR output. This indicates the influence of crystal orientation as well as lattice mismatch upon the interfacial spin scattering asymmetry.

  14. Large enhancement of bulk spin polarization by suppressing CoMn anti-sites in Co2Mn(Ge0.75Ga0.25) Heusler alloy thin film

    NASA Astrophysics Data System (ADS)

    Li, S.; Takahashi, Y. K.; Sakuraba, Y.; Tsuji, N.; Tajiri, H.; Miura, Y.; Chen, J.; Furubayashi, T.; Hono, K.

    2016-03-01

    We have investigated the structure and magneto-transport properties of Co2Mn(Ge0.75Ga0.25) (CMGG) Heusler alloy thin films with near-stoichiometric and Mn-rich compositions in order to understand the effect of Co-Mn anti-sites on bulk spin polarization. Anomalous x-ray diffraction measurements using synchrotron radiated x-rays confirmed that CoMn anti-sites easily form in the near-stoichiometric CMGG compound at annealing temperature higher than 400 °C, while it can be suppressed in Mn-rich CMGG films. Accordingly, large enhancement in negative anisotropic magnetoresistance of CMGG films and giant magnetoresistance (GMR) in current-perpendicular-to-plane (CPP) pseudo spin valves were observed in the Mn-rich composition. A large resistance-area product change (ΔRA) of 12.8 mΩ μm2 was demonstrated in the CPP-GMR pseudo spin valves using the Mn-rich CMGG layers after annealing at 600 °C. It is almost twice of the maximum output observed in the CPP-GMR pseudo spin valves using the near-stoichiometric CMGG. These indicate that the spin polarization of CMGG is enhanced in the Mn-rich composition through suppressing the formation of CoMn-antisites in CMGG films, being consistent with first-principle calculation results.

  15. Evidencing the existence of intrinsic half-metallicity and ferromagnetism in zigzag gallium sulfide nanoribbons

    NASA Astrophysics Data System (ADS)

    Zhou, Yungang; Li, Sean; Zhou, Weilie; Zu, Xiaotao; Gao, Fei

    2014-07-01

    The achievement of half-metallicity with ferromagnetic (FM) coupling has become a key technology for the development of one-dimensional (1D) nanoribbons for spintronic applications. Unfortunately, in previous studies, such a half-metallicity always occurs upon certain external constraints. Here we, for the first time, demonstrate, via density functional theory (DFT), that the recent experimentally realized gallium sulfide nanoribbons (GaSNRs) can display an intrinsic half-metallic character with FM coupling, raised from Ga-4s, Ga-4p and S-3p states at the Ga-dominated edge. Furthermore, the novel half-metallic behavior with FM coupling here is rather robust, especially for GaSNRs with large width and thickness, and can be sustained to the room temperature. Thus, our results accidentally disclose a new 1D spin nanomaterial, which allows us to go beyond the current scope limited to the graphene, boron nitride (BN), zinc oxide (ZnO) and molybdenum sulfide (MoS2) nanoribbons, toward more realistic spintronic applications.

  16. Electric field modulated half-metallicity of semichlorinated GaN nanosheets

    NASA Astrophysics Data System (ADS)

    Xiao, M. X.; Song, H. Y.; Ao, Z. M.; Xu, T. H.; Wang, L. L.

    2016-11-01

    Through density-functional theory calculations, we investigated the half-metallic properties of semichlorinated gallium nitride (Cl-GaN) nanosheets (NSs) under an electric field F. The results show that the electric field can modulate Cl-GaN NSs efficiently from ferromagnetic metals to half-metals. More interestingly, under a broad range of electric field intensity (-0.10~-1.30 V/Å), Cl-GaN NSs have the excellently half-metallic properties with the band gaps (3.71-0.96 eV) and maximal half-metallic gaps with 0.30 eV in spin-up states and metallic behaviors in spin-down states. Moreover, the total magnetic moment decreases (increases) depending on the negative (positive) F, mainly induced by the unpaired N atoms. Our studies demonstrate that the electronic and magnetic properties of GaN NSs can be delicately tuned by the combined surface modification and electric field, indicating the potential of GaN NSs for developing high-performance spintronic nanodevices.

  17. Evidencing the existence of intrinsic half-metallicity and ferromagnetism in zigzag gallium sulfide nanoribbons

    PubMed Central

    Zhou, Yungang; Li, Sean; Zhou, Weilie; Zu, Xiaotao; Gao, Fei

    2014-01-01

    The achievement of half-metallicity with ferromagnetic (FM) coupling has become a key technology for the development of one-dimensional (1D) nanoribbons for spintronic applications. Unfortunately, in previous studies, such a half-metallicity always occurs upon certain external constraints. Here we, for the first time, demonstrate, via density functional theory (DFT), that the recent experimentally realized gallium sulfide nanoribbons (GaSNRs) can display an intrinsic half-metallic character with FM coupling, raised from Ga-4s, Ga-4p and S-3p states at the Ga-dominated edge. Furthermore, the novel half-metallic behavior with FM coupling here is rather robust, especially for GaSNRs with large width and thickness, and can be sustained to the room temperature. Thus, our results accidentally disclose a new 1D spin nanomaterial, which allows us to go beyond the current scope limited to the graphene, boron nitride (BN), zinc oxide (ZnO) and molybdenum sulfide (MoS2) nanoribbons, toward more realistic spintronic applications. PMID:25047122

  18. Evidencing the existence of intrinsic half-metallicity and ferromagnetism in zigzag gallium sulfide nanoribbons.

    PubMed

    Zhou, Yungang; Li, Sean; Zhou, Weilie; Zu, Xiaotao; Gao, Fei

    2014-01-01

    The achievement of half-metallicity with ferromagnetic (FM) coupling has become a key technology for the development of one-dimensional (1D) nanoribbons for spintronic applications. Unfortunately, in previous studies, such a half-metallicity always occurs upon certain external constraints. Here we, for the first time, demonstrate, via density functional theory (DFT), that the recent experimentally realized gallium sulfide nanoribbons (GaSNRs) can display an intrinsic half-metallic character with FM coupling, raised from Ga-4s, Ga-4p and S-3p states at the Ga-dominated edge. Furthermore, the novel half-metallic behavior with FM coupling here is rather robust, especially for GaSNRs with large width and thickness, and can be sustained to the room temperature. Thus, our results accidentally disclose a new 1D spin nanomaterial, which allows us to go beyond the current scope limited to the graphene, boron nitride (BN), zinc oxide (ZnO) and molybdenum sulfide (MoS2) nanoribbons, toward more realistic spintronic applications. PMID:25047122

  19. Half-metallic ferromagnetism in transition metal pnictides and chalcogenides with wurtzite structure

    NASA Astrophysics Data System (ADS)

    Xie, Wen-Hui; Liu, Bang-Gui; Pettifor, D. G.

    2003-10-01

    Using an accurate full-potential density-functional method we explore systematically all the 3d transition metal pnictides and chalcogenides with wurtzite structure in order to find half-metallic ferromagnets which can be fabricated as thin films with thickness large enough for real spintronic applications. Nine of the wurtzite phases, MnSb, CrAs, CrSb, VAs, VSb, CrSe, CrTe, VSe, and VTe, are found to be robust half-metallic ferromagnets. They have very large half-metallic gaps (0.23 0.97 eV) and quite large bulk moduli (42 71 GPa). Most of them are quite low (down to 0.31 eV per formula unit) in total energy with respect to the corresponding ground-state phases, and therefore at least some of them would be grown epitaxially on appropriate substrates in the form of films thick enough. Since being compatible with the III-V and II-VI semiconductors, these half-metallic ferromagnetic phases, when realized experimentally, would be useful in spintronic and other applications.

  20. Six low-strain zinc-blende half metals: An ab initio investigation

    NASA Astrophysics Data System (ADS)

    Pask, J. E.; Yang, L. H.; Fong, C. Y.; Pickett, W. E.; Dag, S.

    2003-06-01

    A class of spintronic materials, the zinc-blende (ZB) half metals, has recently been synthesized in thin-film form. We apply all-electron and pseudopotential ab initio methods to investigate the electronic and structural properties of ZB Mn and Cr pnictides and carbides, and find six compounds to be half metallic at or near their respective equilibrium lattice constants, making them excellent candidates for growth at low strain. Based on these findings, we further propose substrates on which the growth may be accomplished with minimum strain. Our findings are supported by the recent successful synthesis of ZB CrAs on GaAs and ZB CrSb on GaSb, where our predicted equilibrium lattice constants are within 0.5% of the lattice constants of the substrates on which the growth was accomplished. We confirm previous theoretical results for ZB MnAs, but find ZB MnSb to be half metallic at its equilibrium lattice constant, whereas previous work has found it to be only nearly so. We report here two low-strain half metallic ZB compounds, CrP and MnC, and suggest appropriate substrates for each. Unlike the other five compounds, we predict ZB MnC to become/remain half metallic with compression rather than expansion, and to exhibit metallicity in the minority- rather than majority-spin channel. These fundamentally different properties of MnC can be connected to substantially greater p-d hybridization and d-d overlap, and correspondingly larger bonding-antibonding splitting and smaller exchange splitting. We examine the relative stability of each of the six ZB compounds against NiAs and MnP structures, and find stabilities for the compounds not yet grown comparable to those already grown.

  1. Multilayer heterostructures of magnetic Heusler and binary compounds from first principles

    NASA Astrophysics Data System (ADS)

    Garoufalis, Christos; Galanakis, Iosif

    2016-03-01

    Employing first-principles state-of-the-art electronic structure calculations, we study a series of multilayer heterostructures composed of ferro/ferrimagnetic half-metallic Heusler compounds and binary compounds presenting perpendicular magnetic anisotropy. We relax these heterostructures and study both their electronic and magnetic properties. In most studied cases the Heusler spacer keeps a large value of spin-polarization at the Fermi level even for ultrathin films which attends the maximum value of 100% in the case of the Mn2VSi/MnSi multilayer. Our results pave the way both experimentally and theoretically towards the growth of such multilayer heterostructures and their incorporation in spintronic/magnetoelectronic devices.

  2. An abinitio study of the half-metallic properties of Co2TGe (T=Sc, Ti, V, Cr, Mn, Fe): LSDA+U method

    NASA Astrophysics Data System (ADS)

    Rai, D. P.; Thapa, R. K.

    2013-06-01

    Using density functional theory (DFT) calculations, we investigated the electronic and magnetic properties of the Heusler compounds Co2TGe (T = Sc, Ti, V, Cr, Mn, Fe). Among the systems under investigation Co2CrGe and Co2MnGe have given 100% spin polarization at the Fermi energy ( E F ). Co2CrGe is the most stable half-metallic ferromagnets (HMFs) with an energy gap of 0.24 eV at the Fermi level ( E F ) in spin down channel. We have also found an increase in the total magnetic moments as T goes from Sc to Fe. The calculated magnetic moments for Co2CrGe and Co2MnGe are 3.999 µ B and 5.00 µ B respectively. Based on the local spin density approximation (LSDA) calculated results, we have predicted that the compounds Co2CrGe and Co2MnGe are HMFs. We have tried to study the HMFs in Co2ScGe, Co2TiGe, Co2VGe and Co2FeGe by using the local spin density approximation and Coulomb repulsion (U) (LSDA+U) when the simple generalized gradient approximation (GGA) or the LSDA fail.

  3. Half-metallic Dirac cone in zigzag graphene nanoribbons on graphene

    NASA Astrophysics Data System (ADS)

    Chen, M. X.; Weinert, M.

    2016-07-01

    The Dirac electrons of graphene, an intrinsic zero gap semiconductor, uniquely carry spin and pseudospin that give rise to many fascinating electronic and transport properties. While isolated zigzag graphene nanoribbons are antiferromagnetic semiconductors, we show by means of first-principles and tight-binding calculations that zigzag graphene nanoribbons supported on graphene are half metallic as a result of spin- and pseudospin-symmetry breaking. In particular, half-metallic Dirac cones are formed at K (K') near the Fermi level. The present results demonstrate that the unique combination of spin and pseudospin in zigzag graphene nanoribbons may be used to manipulate the electronic properties of graphene, and may have practical implications for potential graphene-based nanoelectronic applications.

  4. Graphene-based half-metal and spin-semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji

    2016-03-01

    In this letter we propose a strategy to make graphene become a half-metal or spin-semiconductor by combining the magnetic proximity effects and sublattice symmetry breaking in graphone/graphene and graphone/graphene/BN heterostructures. Exchange interactions lift the spin degeneracy and sublattice symmetry breaking opens a band gap in graphene. More interestingly, the gap opening depends on the spin direction and the competition between the sublattice asymmetry and exchange field determines the system is a half-metal or a spin-semiconductor. By first-principles calculations and a low-energy effective model analysis, we elucidate the underlying physical mechanism of spin-dependent gap opening and spin degeneracy splitting. This offers an alternative practical platform for graphene-based spintronics.

  5. Evidence for Half-Metallicity in n-type HgCr2Se4.

    PubMed

    Guan, Tong; Lin, Chaojing; Yang, Chongli; Shi, Youguo; Ren, Cong; Li, Yongqing; Weng, Hongming; Dai, Xi; Fang, Zhong; Yan, Shishen; Xiong, Peng

    2015-08-21

    High quality HgCr2Se4 single crystals have been investigated by magnetization, electron transport, and Andreev reflection spectroscopy. In the ferromagnetic ground state, the saturation magnetic moment of each unit cell corresponds to an integer number of electron spins (3  μB/Cr3+), and the Hall effect measurements suggest n-type charge carriers. Spin polarizations as high as 97% were obtained from fits of the differential conductance spectra of HgCr2Se4/Pb junctions with the modified Blonder-Tinkham-Klapwijk theory. The temperature and bias-voltage dependencies of the subgap conductance are consistent with recent theoretical calculations based on spin active scatterings at a superconductor-half-metal interface. Our results suggest that n-HgCr2Se4 is a half-metal, in agreement with theoretical calculations that also predict undoped HgCr2Se4 is a magnetic Weyl semimetal.

  6. Robust half-metallicity and topological aspects in two-dimensional Cu-TPyB

    PubMed Central

    Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    Half-metallicity due to the coexistence of metallic nature for one spin component and insulating nature for the other is a base of spintronics devices, but was only achieved in few materials. From first-principles calculations, we demonstrate that a recently-synthesized two-dimensional organometallic framework of 1,3,5-tris(pyridyl)benzene and Cu atoms (Cu-TPyB) has robust half-metallicity. High electron velocity in one spin channel at Dirac point and a relatively large band gap in the other make the material meeting the demand of filtering the current into a single spin component. Moreover, spin-orbit coupling induces topologically nontrivial band gaps in the vicinity of the Fermi level, which are implementable for achieving quantum anomalous Hall effect in a low temperature range (<8 K). PMID:26365292

  7. Spin-polarized ballistic transport in a thin superlattice of zincblende half metallic compounds

    NASA Astrophysics Data System (ADS)

    Fong, Ching-Yao; Qian, Meichun; Pickett, Warren

    2005-03-01

    We examine theoretically ballistic conduction in a sample made of thin layers of zincblende half metals. The sample is a superlattice consisting of monolayers of GaAs and MnAs, a bilayer of CrAs, and a bilayer of GaAs. The approach is based on density functional theory with the generalized gradient approximation. The superlattice is found to have a half metallic character, and ballistic conduction of electrons within ˜0.3 eV of the Fermi level will give nearly 100% spin-polarized conductance in the direction of the superlattice. Our calculated results suggest that a thin superlattice involving the MnAs and CrAs will be a good spintronic material and can be grown on GaAs substrate by molecular beam epitaxy.

  8. Surface half-metallicity of CrAs in the zinc-blende structure

    NASA Astrophysics Data System (ADS)

    Galanakis, I.

    2002-06-01

    The development of new techniques such as the molecular beam epitaxy have enabled the growth of thin films of materials presenting novel properties. Recently it was made possible to grow a CrAs thin-film in the zinc blende structure. In this contribution, the full-potential screened KKR method is used to study the electronic and magnetic properties of bulk CrAs in this phase as well as the Cr and As terminated (001) surfaces. Bulk CrAs is found to be a half-metallic ferromagnet for all three GaAs, AlAs and InAs experimental lattice constants with a total spin magnetic moment of 3μB. The Cr-terminated surface retains the half-metallic character of the bulk, while in the case of the As-termination the surface states destroy the gap in the minority-spin band.

  9. GW study of the half metallic band gap of zinc blende CrAs

    NASA Astrophysics Data System (ADS)

    Damewood, Liam; Fong, Ching Yao

    2009-11-01

    We determined the semiconducting gap of zinc blende (ZB) CrAs within the GW approximation (GWA). This is the first GW calculation of a half-metal. Previous calculations using density functional theory within the generalized gradient approximation (GGA) determined a gap of 1.8 eV, but the GGA is known to give too small of a value for this quantity in semiconductors. Additionally, since ZB CrAs is a half metal, one of its spin channels behaves like a metal and changes the quasiparticle screening compared to the insulating case. Due to the local field effect, we only included the γ-point term in the metallic channel calculation of the polarizability while keeping the full set of terms in the insulating channel GW calculation. Preliminary results suggest these terms from the polarizability produce little change in the value of the semiconducting gap when compared to the ``full'' GWA calculation.

  10. Emergence of half-metallic ferromagnetism in Ga1- x Cr x As

    NASA Astrophysics Data System (ADS)

    Rani, Anita; Kumar, Ranjan

    2016-08-01

    We have studied the structural, electronic and half-metallic ferromagnetic properties of Ga1- x Cr x As compounds at dopant concentrations x = 0.25, 0.125 and 0.0625. First principle calculations based on density functional theories as implemented in SIESTA code using LDA + U (local density approximation + U) as exchange correlation potential have been used to study the properties of these compounds. Here, U is the Hubbard's parameter. The calculated results predict that Cr-doped GaAs diluted magnetic semiconductors exhibit half-metallic properties at different concentrations, in which Cr atoms form deep levels in forbidden energy gap. The results also predict that with increase of fraction of Cr atoms, half-metallic energy band gap of Ga1- x Cr x As decreases. Total magnetic moment of these compounds is due to Cr states, and also p-d hybridization between Ga-p and Cr-d induces small magnetic moment on nonmagnetic atoms (Ga and As) for all concentrations.

  11. Half-metallicity in MnPSe₃ exfoliated nanosheet with carrier doping.

    PubMed

    Li, Xingxing; Wu, Xiaojun; Yang, Jinlong

    2014-08-01

    Searching two-dimensional (2D) half-metallic crystals that are feasible in experiment is essential to develop next-generation nanospintronic devices. Here, a 2D exfoliated MnPSe3 nanosheet with novel magnetism is first proposed based on first-principles calculations. In particular, the evaluated low cleavage energy and high in-plane stiffness indicate that the free-standing MnPSe3 nanosheet can be exfoliated from its bulk structure in experiment. The MnPSe3 nanosheet is an antiferromagnetic semiconductor at its ground state, whereas both electron and hole doping induce its transition from antiferromagnetic semiconductor to ferromagnetic half-metal. Moreover, the spin-polarization directions of 2D half-metallic MnPSe3 are opposite for electron and hole doping, which can be controlled by applying an external voltage gate. The Monte Carlo simulation based on the Ising model suggests the Curie temperature of the doped 2D MnPSe3 crystal is up to 206 K. These advantages render the 2D MnPSe3 crystal with great potentials for application in electric-field controlled spintronic devices.

  12. Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si

    SciTech Connect

    Qian, M C; Fong, C Y; Liu, K; Pickett, W E; Pask, J E; Yang, L H

    2006-05-30

    The authors propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a {delta}-doped layer of Mn in Si, using ab initio electronic-structure methods. They find that (1) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (2) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature (T{sub C}). Being Si based and possibly having a high T{sub C} as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  13. Search for half-metallic ferromagnetism in orthorhombic Ce(Fe/Cr)O3 perovskites

    NASA Astrophysics Data System (ADS)

    Abbad, A.; Benstaali, W.; Bentounes, H. A.; Bentata, S.; Benmalem, Y.

    2016-02-01

    The full-potential linearized augmented plane wave (FPLAPW) method based on the density functional theory within the GGA and GGA+U, is used to investigate the structural, magnetic and half-metallic properties of the Pnma orthorhombic Cerium orthoferrite (CeFeO3) and Cerium orthochromite (CeCrO3). The calculated densities of states presented in this study identify the metallic behavior CeFeO3 when we use the GGA scheme, whereas when we use the GGA+U, we see that its exhibits half-metallic character with an integer magnetic moment of 24 μB per formula unit at its equilibrium volume. CeCrO3 is half-metallic for both approaches and of n type conductivity for GGA but p type conductivity for GGA+U. It is found that the majority of the magnetic moments of both compounds originate from the cerium sites since the f states of Ce are spin polarized. From the band structure and the densities of states analysis, we find that CeCrO3 and CeFeO3 are strong candidates for spintronic applications.

  14. Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbons

    SciTech Connect

    Lopez-Benzanilla, Alejandro; Huang, Jingsong; Kent, Paul R; Sumpter, Bobby G

    2013-01-01

    Half-metallic nanoscale conductors, highly sought after for spintronic applications, are usually realized through metal elements, chemical doping, or external electric fields. By means of local and hybrid density functional theory calculations, we identify pristine zigzag silicon carbide nanoribbons (zSiC-NRs) with bare edges as a metal-free monolayered material that exhibits intrinsic half-metallic behavior without chemical doping or external electric field. Ab initio molecular dynamics simulations indicate that the half-metallicity is robust at room temperature. We also demonstrate that edge termination with O and S atoms transforms the zSiC-NRs into a full metal or a semiconducting material, respectively, due to the presence of O dimerization only on the Si edge and of S trimerization on both Si and C edges, the latter being driven by an unusual Peierls-like distortion along the functionalizing S atoms. The rich electronic properties displayed by zSiC-NRs may open new perspectives for spintronic applications using layered, metal-free, and light atom material.

  15. Strain-tunable half-metallicity in hybrid graphene-hBN monolayer superlattices

    NASA Astrophysics Data System (ADS)

    Meng, Fanchao; Zhang, Shiqi; Lee, In-Ho; Jun, Sukky; Ciobanu, Cristian V.

    2016-07-01

    As research in 2-D materials evolves toward combinations of different materials, interesting electronic and spintronic properties are revealed and may be exploited in future devices. A way to combine materials is the formation of spatially periodic domain boundaries in an atom-thick monolayer: as shown in recent reports, when these domains are made of graphene and hexagonal boron nitride, the resulting superlattice has half-metallic properties in which one spin component is (semi)metallic and the other is semiconductor. We explore here the range of spin-dependent electronic properties that such superlattices can develop for different type of domain boundaries, domain widths, and values of tensile strain applied to the monolayer. We show evidence of an interplay between strain and domain width in determining the electronic properties: while for armchair boundaries the bandgap is the same for both spin components, superlattices with zigzag boundaries exhibit rich spin-dependent behavior, including different bandgaps for each spin component, half-metallicity, and reversal of half-metallicity. These findings can lead to new ways of controlling the spintronic properties in hybrid-domain monolayers, which may be exploited in devices based on 2-D materials.

  16. Anti-ferromagnetic/ferromagnetic transition in half-metallic Co9Se8 nanoparticles

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Kumar, Pushpendra

    2015-09-01

    The size, shape and defects of the half-metallic Co9Se8 nanoparticles (NPs) play a crucial role in the magnetic transition at the local magnetic regime at low temperatures. A general, non-injection, one-pot reaction route without toxic reagents, such as TOPO/TOPSe, surfactant and/or chelating agent, were used to synthesize gram scale of well-dispersed, high-quality Co9Se8 NPs. The calculated mean crystallite size of the NPs was ∼10 nm, which is consistent with the transmission electron microscope data. This study reveals an unusual anti-ferromagnetic/ferromagnetic transition with some super-paramagnetic character in the low temperature region of Co9Se8 NPs. These investigations are expected not only to help the observed phenomenon, but also help in identifying new half-metallic magnetic NPs for spintronics devices. The outcome provides better understanding of the occurrence of superparamagnetism at low temperatures in the nano-regime, for half-metallic systems.

  17. Tunnel magnetoresistance effect in magnetic tunnel junctions using Fermi-level-tuned epitaxial Fe{sub 2}Cr{sub 1−x}Co{sub x}Si Heusler alloy

    SciTech Connect

    Wang, Yu-Pu; Han, Gu-Chang; Qiu, Jinjun; Yap, Qi-Jia; Lu, Hui; Teo, Kie-Leong

    2014-05-07

    This paper reports a systematic investigation on the structural and magnetic properties of Fe{sub 2}Cr{sub 1−x}Co{sub x}Si Heusler alloys with various compositions of x by co-sputtering Fe{sub 2}CrSi and Fe{sub 2}CoSi targets and their applications in magnetic tunnel junctions (MTJs). Fe{sub 2}Cr{sub 1−x}Co{sub x}Si films of high crystalline quality have been epitaxially grown on MgO substrate using Cr as a buffer layer. The L2{sub 1} phase can be obtained at x = 0.3 and 0.5, while B2 phase for the rest compositions. A tunnel magnetoresistance (TMR) ratio of 19.3% at room temperature is achieved for MTJs using Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si as the bottom electrode with 350 °C post-annealing. This suggests that the Fermi level in Fe{sub 2}Cr{sub 1−x}Co{sub x}Si has been successfully tuned close to the center of band gap of minority spin with x = 0.7 and therefore better thermal stability and higher spin polarization are achieved in Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si. The post-annealing effect for MTJs is also studied in details. The removal of the oxidized Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si at the interface with MgO barrier is found to be the key to improve the TMR ratio. When the thickness of the inserted Mg layer increases from 0.3 to 0.4 nm, the TMR ratio is greatly enhanced from 19.3% to 28%.

  18. Theoretical realization of half-metallicity in two-dimensional monolayered molybdenum dinitride by Mo vacancy tuning

    NASA Astrophysics Data System (ADS)

    Qian, Yan; Wu, Haiping; Kan, Erjun; Ma, Yanming; Lu, Ruifeng; Deng, Kaiming

    2016-08-01

    In experiment, defect-doping has been an efficient method to engineer the properties of materials. Motivated by the experimental synthesis of bulk MoN2 and theoretical exfoliation of two-dimensional monolayered counterpart, here we explore the possibility of realization of half-metallicity in T-type monolayered MoN2 by introducing vacancies on Mo sites via density-functional calculations. The results show that, once vacancies is introduced on Mo sites, T-type monolayered MoN2 would transfer from semiconductor to half-metal, and the half-metallicity is robust in the whole vacancy content range employed in this work. Besides, the half-metallicity is insensitive to N vacancies. Further study reveals that the half-metallicity is originated from the magnetic state on N sites. For the metastable H-type monolayered MoN2, it would also turn into half-metal, however, the vacancy rate should be beyond 25%. Such a relative large rate is due to the metallic property in vacancy-free H-type MoN2. Based on this work, we think that introducing vacancies on metal sites in nitrogen rich metal nitrides perhaps is a practicable way to search for half-metals.

  19. Effect of boron on the structural and magnetic properties of Co2FeSi1-xBx Heusler alloys

    NASA Astrophysics Data System (ADS)

    Ramudu, M.; Raja, M. Manivel; Kamat, S. V.

    2016-05-01

    The partial substitution of Si with B on the structural and magnetic properties of Co2FeSi1-xBx (x = 0-0.5) alloys was systematically investigated. X-ray and microstructural investigations show the presence of second phase at the grain boundaries which increases with increasing boron content. From thermal analysis studies, it was observed that L21-B2 ordering temperature remain constant whereas the melting point decreases with increase in boron addition and merges with ordering temperature at x = 0.5. The increase in TC for the alloys x ≥ 0.25 was attributed to the increase in second phase due to boron.

  20. Direct Evidence of Half Metallic Behavior in Iron Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Morton, Simon

    2000-03-01

    Many materials have been predicted to be half metallic magnets, but only one example was provided experimentally so far^1. Using the spin-resolving photoelectron spectrometer at the Spectromicroscopy Facility (Beamline 7) at the Advanced Light Source^2, we have found evidence for half-metallic behavior in thin films of Fe_3O4 (magnetite). Thin films of magnetite hold out the possibility of use in devices as pure spin sources. Because our spin resolving experiments are performed at higher photon energies, we were able to monitor the spin polarization of the near Fermi energy electrons without resorting to distructive surface cleaning techniques, using the samples "as is." Furthermore, we have demonstrated that harsh sample cleaning procedures such as ion etching causes the loss of the desired spin polarization, which may help explain the failure of other previous experiments to observe half metallic behavior. The ability to perform the experiments at higher energies is a direct result of the high brightness of the ALS and is probably a unique capability of 3rd Generation Synchrotron Radiation Sources. The experiments at the ALS were supported by growth and characterization studies at UCSD. Magnetite films were prepared by reactive sputtering. Epitaxial magnetite films were grown on MgO and sapphire substrates with precise control of gas flows and substrate temperature, Their structure was characterized by RHEED, LEED, and XRD. Further experiments are in progress. footnote 1. Park et al, Nature 392, 794 (1998); Phys. Rev. Lett. 81, 1953 (1998). footnote 2. J.G. Tobin et al, MRS Symp. Proc. 524, 185 (1998).

  1. Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

    NASA Astrophysics Data System (ADS)

    Choudhuri, Indrani; Kumar, Sourabh; Mahata, Arup; Rawat, Kuber Singh; Pathak, Biswarup

    2016-07-01

    High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices.High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices. Electronic supplementary information (ESI

  2. Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe

    NASA Astrophysics Data System (ADS)

    Cao, Ting; Li, Zhenglu; Louie, Steven G.

    2015-06-01

    We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0 μB per carrier in a range of 3 ×1013/cm2-1 ×1014/cm2 , with the system in a half-metal state before the moment starts to descend abruptly. The predicted itinerant magnetism originates from an exchange splitting of electronic states at the top of the valence band, where the density of states exhibits a sharp van Hove singularity in this quasi-two-dimensional system.

  3. Half metallic ferromagnetism in alkali metal nitrides MN (M = Rb, Cs): A first principles study

    SciTech Connect

    Murugan, A. Rajeswarapalanichamy, R. Santhosh, M. Sudhapriyanga, G.; Kanagaprabha, S.

    2014-04-24

    The structural, electronic and elastic properties of two alkali metal nitrides (MN: M= Rb, Cs) are investigated by the first principles calculations based on density functional theory using the Vienna ab-initio simulation package. At ambient pressure the two nitrides are stable in ferromagnetic state with CsCl structure. The calculated lattice parameters are in good agreement with the available results. The electronic structure reveals that these materials are half metallic in nature. A pressure-induced structural phase transition from CsCl to ZB phase is observed in RbN and CsN.

  4. Low-temperature heat capacity upon the transition from paramagnetic to ferromagnetic Heusler alloys Fe2 MeAl ( Me = Ti, V, Cr, Mn, Fe, Co, Ni)

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Marchenkov, V. V.; Korolev, A. V.; Lukoyanov, A. V.

    2016-07-01

    The heat capacity of band magnets Fe2 MeAl ( Me = Ti, V, Cr, Mn, Fe, Co, Ni) ordered in crystal structure L21 has been measured in the range 2 K ≤ T ≤ 50 K. The dependences of the Debye temperature ΘD, the Sommerfeld coefficient γ, and the temperature-independent contribution to heat capacity C 0 on the number of valence electrons z in the alloys have been determined.

  5. Precipitation of heusler phase (Ni2TiAl) from B2-TiNi in Ni-Ti-Al and Ni-Ti-Al-X (X=Hf, Zr) alloys

    NASA Astrophysics Data System (ADS)

    Jung, J.; Ghosh, G.; Isheim, D.; Olson, G. B.

    2003-06-01

    The precipitation of Heusler phase (L21: Ni2TiAl) from a supersaturated B2 (TiNi-based) matrix at 600°C and 800°C is studied using transmission electron microscopy (TEM), analytical electron microscopy (AEM), and three-dimensional atom-probe (3DAP) microscopy in Ni-Ti-Al and Ni-Ti-Al-X (X=Hf and Zr) alloys. The B2/L21 two-phase system, with ordered structures based on the bcc lattice, is chosen for its microstructural analogy to the classical γ/ γ' system with an fcc lattice. Knowledge of the temperature-dependent partitioning of alloying elements and their atomic volumes in the B2-TiNi and L21 phases is desired to support design of high-performance shape-memory alloys (SMAs) with controlled misfit strain and transformation temperatures. After aging at 600°C for up to 2000 hours, the L21 precipitates remain fully coherent at a particle diameter of ˜20 nm. The observed effects of a misfit strain of -1.9 pct on the microstructure of the B2/L21 system are similar to those theoretically predicted and experimentally observed for the γ/ γ' system. The similarities are demonstrated in terms of the precipitate shape, spatial distribution, and minimum distance of separation between L21 precipitates. However, all these effects disappear after aging the alloys at 800°C for 1000 hours, when the L21 precipitates become semicoherent at particle diameters above ˜400 nm. A simple analysis of the size evolution of L21 precipitates after an isochronal aging (1000 hours) experiment suggests that they follow coarsening kinetics at 600°C and growth kinetics at 800°C, consistent with the Langer-Schwartz theory of precipitation kinetics, which predicts that a high supersaturation suppresses the growth regime. Microanalysis using AEM and 3DAP microscopy define the TiNi-Ni2TiAl phase boundaries at 800°C and 600°C. At 800°C, Hf and Zr partition to the B2-TiNi, while at 600°C, they partition slightly to the L21 phase, reducing the lattice misfit to -1.7 and -0.011 pct

  6. Identification of Optimum Magnetic Behavior of NanoCrystalline CmFeAl Type Heusler Alloy Powders Using Response Surface Methodology

    NASA Astrophysics Data System (ADS)

    Srivastava, Y.; Srivastava, S.; Boriwal, L.

    2016-09-01

    Mechanical alloying is a novelistic solid state process that has received considerable attention due to many advantages over other conventional processes. In the present work, Co2FeAl healer alloy powder, prepared successfully from premix basic powders of Cobalt (Co), Iron (Fe) and Aluminum (Al) in stoichiometric of 60Co-26Fe-14Al (weight %) by novelistic mechano-chemical route. Magnetic properties of mechanically alloyed powders were characterized by vibrating sample magnetometer (VSM). 2 factor 5 level design matrix was applied to experiment process. Experimental results were used for response surface methodology. Interaction between the input process parameters and the response has been established with the help of regression analysis. Further analysis of variance technique was applied to check the adequacy of developed model and significance of process parameters. Test case study was performed with those parameters, which was not selected for main experimentation but range was same. Response surface methodology, the process parameters must be optimized to obtain improved magnetic properties. Further optimum process parameters were identified using numerical and graphical optimization techniques.

  7. Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity.

    PubMed

    Choudhuri, Indrani; Kumar, Sourabh; Mahata, Arup; Rawat, Kuber Singh; Pathak, Biswarup

    2016-08-01

    High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ∼450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices. PMID:27321785

  8. Doping enhanced ferromagnetism and induced half-metallicity in CrI3 monolayer

    NASA Astrophysics Data System (ADS)

    Wang, Hongbo; Fan, Fengren; Zhu, Shasha; Wu, Hua

    2016-05-01

    Two-dimensional materials are of current great interest for their promising applications to postsilicon microelectronics. Here we study, using first-principles calculations and a Monte Carlo simulation, the electronic structure and magnetism of CrI3 monolayer, whose bulk material is an interesting layered ferromagnetic (FM) semiconductor. Our results show that CrI3 monolayer remains FM with T\\text{C}∼ 75 \\text{K} , and the FM order is due to a superexchange in the near-90° Cr-I-Cr bonds. Moreover, we find that an itinerant magnetism could be introduced by carriers doping. Both electron doping and hole doping would render CrI3 monolayer half-metallic, and steadily enhance the FM stability. In particular, hole doping is three times as fast as electron doping in increasing T C, and a room temperature FM half-metallicity could be achieved in CrI3 monolayer via a half-hole doping. Therefore, CrI3 monolayer would be an appealing two-dimensional spintronic material.

  9. Transport, optical, and electronic properties of the half-metal CrO2

    NASA Astrophysics Data System (ADS)

    Mazin, I. I.; Singh, D. J.; Ambrosch-Draxl, Claudia

    1999-01-01

    The electronic structure of CrO2 is critically discussed in terms of the relation of existing experimental data and well converged local-spin-density approximation (LSDA) and generalized gradient approximation (GGA) calculations of the electronic structure and transport properties of this half metal magnet, with a particular emphasis on optical properties. We find only moderate manifestations of many-body effects. Renormalization of the density of states is not large and is in the typical range for transition metals. We find substantial deviations from Drude behavior in the far-infrared optical conductivity. These appear because of the unusually low energy of interband optical transitions. The calculated mass renormalization is found to be rather sensitive to the exchange-correlation functional used and varies from 10% (LSDA) to 90% (GGA), using the latest specific-heat data. We also find that dressing of the electrons by spin fluctuations, because of their high energy, renormalizes the interband optical transition at as high as 4 eV by about 20%. Although we find no clear indications of strong correlations of the Hubbard type, strong electron-magnon scattering related to the half metallic band structure is present and this leads to a nontrivial temperature dependence of the resistivity and some renormalization of the electron spectra.

  10. Half-metallic properties of single-walled polymeric manganese phthalocyanine nanotubes.

    PubMed

    Jiang, Hongbin; Bai, Meilin; Wei, Peng; Sun, Lili; Shen, Ziyong; Hou, Shimin

    2012-01-01

    We present a theoretical study of the electronic and magnetic properties of single-walled manganese phthalocyanine (MnPc) nanotubes which can be thought of as rolled-up ribbons of the two-dimensional (2D) polymeric MnPc sheet. Our density functional theory calculations show that all of the MnPc nanotubes investigated here are half-metals with 100% spin polarization around the Fermi level. Following the increase of the tube diameter, the number of spin-down energy bands of MnPc nanotubes is always increased while the spin-up band gap of MnPc nanotubes approaches that of the 2D MnPc sheet in an oscillatory manner. Because the half-metallic character of MnPc nanotubes is deeply rooted in the distribution of electrons in the energy bands dominated by the Mn 3d atomic orbitals, adsorption of CO molecules on the Mn ions leads to a redistribution of electrons in the Mn 3d orbitals and thus can tune precisely the spin state and electronic transport properties of MnPc nanotubes, demonstrating promising applications of MnPc nanotubes in future molecular spintronics and single-molecule sensors.

  11. Possible Si-BASED Half-Metallic Materials:. MnSi46 Clathrates

    NASA Astrophysics Data System (ADS)

    Zhao, Zhi-Wei; Wang, Jing; Zhao, Hui-Yan; Liu, Ying

    The structural and magnetic properties of MSi46 (M = Mn, Fe, Co and Ni) clathrates have been studied using density functional theory calculations within the generalized gradient approximation. When the structures involve a dopant at the center of a Si20 or Si24 cage, the results show that the neighboring atoms around the dopant are drawn in toward the center. Some of the silicon clathrates with a Mn or Co dopant at the center site of a Si20 cage, or a Mn, Fe or Ni dopant at the center site of a Si24 cage are found to be half-metallic materials with large magnetic moments, and others with a Fe or Ni dopant at the center site of a Si20 cage or a Co dopant at the center site of a Si24 cage display semi-metallic characters. In particular, MnSi46 with a half-metallic gap of 0.70 eV and a magnetic moment of 5.00 μB shows promise for applications in the field of spintronics.

  12. The half metallic state of transition metal pnictides in Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Miao, M. S.; Lambrecht, Walter R. L.

    2004-03-01

    We perform full potential linear muffin tin orbital (FP-LMTO) calculations for a series transition metal pnictides compounds, including CrAs, CrSb, MnAs, MnSb, VAs and VSb etc., in various four and six fold coordinated structures. The volume expansion can stabilize both the Zinc Blende (ZB) and the Wurtzite (WZ) structures. The energy differences between the ZB and WZ structure are very small and for several compound, such as CrSb, VAs, etc., the WZ structure is more stable than the ZB structure. As in ZB structure, the transition metal pnictides are also half metallic in the WZ structure. The density of states at the Fermi level for majority spin, the band gap for minority spin and the valence band maximum (VBM) for minority spin relative to the Fermi level are very close for two different structures, indicating that the half metallic properties are mainly determined by the local tetrahedron environments which is similar for ZB and WZ structures. While the volume increases, minority band gap increases and the relative Fermi level position to the VBM of minority spin decreases. This is different to the semiconductor band gap dependence on the volume and is caused by the exchange interaction between the majority and the minority spins that will increase with the expansion of the volume. The same effect also causes a slight increase of the DOS for majority spin at Fermi level.

  13. A review of the electronic and magnetic properties of tetrahedrally bonded half-metallic ferromagnets

    NASA Astrophysics Data System (ADS)

    Mavropoulos, Ph; Galanakis, I.

    2007-08-01

    The emergence of the field of spintronics has brought half-metallic ferromagnets to the centre of scientific research. A lot of interest was focused on newly created transition-metal pnictides (such as CrAs) and chalcogenides (such as CrTe) in the metastable zinc-blende lattice structure. These compounds were found to have the advantage of high Curie temperatures in addition to their structural similarity to semiconductors. Significant theoretical activity has been devoted to the study of the electronic and magnetic properties of these compounds in an effort to achieve a better control of their experimental behaviour in realistic applications. This paper is devoted to an overview of the studies of these compounds, with emphasis on theoretical results, covering their bulk properties (electronic structure, magnetism, stability of the zinc-blende phase, stability of ferromagnetism) as well as low-dimensional structures (surfaces, interfaces, nanodots and transition-metal delta-doped semiconductors) and phenomena that can possibly destroy the half-metallic property, like structural distortions or defects.

  14. Zinc-blende half-metallic ferromagnets are rarely stabilized by coherent epitaxy

    NASA Astrophysics Data System (ADS)

    Zhao, Yu-Jun; Zunger, Alex

    2005-04-01

    The need for spin-injectors having the same zinc-blende-type crystal structure as conventional semiconductor substrates has created significant interests in theoretical predictions of possible metastable “half-metallic” zinc-blende ferromagnets, which are normally more stable in other structure-types, e.g., NiAs. Such predictions were based in the past on differences Δbulk in the total energies of the respective bulk crystal forms (zinc blende and NiAs). We show here that the appropriate criterion is comparing difference Δepi(as) in epitaxial total energies. This reveals that even if Δbulk is small, still for MnAs, CrSb, CrAs, CrTe, Δepi(as)>0 for all substrate lattice constant as , so the zinc-blende phase is not stabilized. For CrS we find Δepi(as)<0 , but the system is antiferromagnetic, thus not half-metallic. Finally, zinc-blende CrSe is predicted to be epitaxially stable for as>6.2Å and is half metallic.

  15. Enhancing spin injection efficiency through half-metallic miniband conduction in a spin-filter superlattice.

    PubMed

    Yang, Yi-Hang; Li, Lin; Liu, Fen; Gao, Zhi-Wei; Miao, Guo-Xing

    2016-02-10

    We theoretically and numerically studied the band structure and spin transport of electrons subject to a superlattice structure where magnetic semiconductor layers lie between normal semiconductor layers to form periodic spin-filter tunnel barriers. In this alternately deposited superlattice structure, due to the induced periodicity of the envelope wavefunctions, there are additional allowed and forbidden energy regions established, i.e. forming minibands that are far narrower than the conventional conduction bands. The number and thickness of the stacked potential profiles can finely tune these minibands. The spin dependent potential barriers also induce spin splitting at the bottom of each miniband, which generates strongly spin-dependent miniband conduction. Most strikingly, the lowest lying miniband is 100% spin-polarized mimicking a half-metallic behavior on this conduction channel. The total transmission electron current carries thus near-perfectly polarized spin currents when the superlattice falls into suitable miniband conduction regime. This half-metallic miniband enhanced spin-filtering capability paves the way to generate highly polarized spin current without incurring exponentially increased device impedance, as usually happens when only a single spin-filter barrier is applied. PMID:26761786

  16. Raman studies of nearly half-metallic ferromagnetic CoS2.

    PubMed

    Lyapin, S G; Utyuzh, A N; Petrova, A E; Novikov, A P; Lograsso, T A; Stishov, S M

    2014-10-01

    We measured the Raman spectra of ferromagnetic, nearly half-metallic, CoS2 over a broad temperature range. All five Raman active modes Ag, Eg, Tg(1), Tg(2) and Tg(3) were observed. The magnetic ordering is indicated by a change of the temperature dependences of the frequency and the line width of Ag and Tg(2) modes at the Curie point. The temperature dependence of the frequencies and line widths of the Ag, Eg, Tg(1), Tg(2) modes in the paramagnetic phase can be described in the framework of the Klemens approach. Hardening of the Tg(2), Tg(1) and Ag modes on cooling can be unambiguously seen in the ferromagnetic phase. The line widths of Tg(2) and Ag modes behave in a natural way at low exciting laser powers (they decrease with decreasing temperature) in the ferromagnetic phase. At high exciting laser powers the corresponding line widths increase as temperature decreases below the Curie temperature. Then, as will be shown, the line width of the Ag mode reaches a maximum at about 80 K. Tentative explanations of some of the observed effects are given, taking into account the nearly half-metallic nature of CoS2.

  17. Evidencing the existence of exciting half-metallicity in two-dimensional TiCl3 and VCl3 sheets

    NASA Astrophysics Data System (ADS)

    Zhou, Yungang; Lu, Haifeng; Zu, Xiaotao; Gao, Fei

    2016-01-01

    Half-metallicity combined with wide half-metallic gap, unique ferromagnetic character and high Curie temperature has become a key driving force to develop next-generation spintronic devices. In previous studies, such half-metallicity always occurred under certain manipulation. Here, we, via examining a series of two-dimensional transition-metal trichlorides, evidenced that TiCl3 and VCl3 sheets could display exciting half-metallicity without involving any external modification. Calculated half-metallic band-gaps for TiCl3 and VCl3 sheets are about 0.60 and 1.10 eV, respectively. Magnetic coupled calculation shows that both sheets favor the ferromagnetic order with a substantial collective character. Estimated Curie temperatures can be up to 376 and 425 K for TiCl3 and VCl3 sheets, respectively. All of these results successfully disclose two new promising two-dimensional half-metallic materials toward the application of next-generation paper-like spintronic devices.

  18. Evidencing the existence of exciting half-metallicity in two-dimensional TiCl3 and VCl3 sheets

    PubMed Central

    Zhou, Yungang; Lu, Haifeng; Zu, Xiaotao; Gao, Fei

    2016-01-01

    Half-metallicity combined with wide half-metallic gap, unique ferromagnetic character and high Curie temperature has become a key driving force to develop next-generation spintronic devices. In previous studies, such half-metallicity always occurred under certain manipulation. Here, we, via examining a series of two-dimensional transition-metal trichlorides, evidenced that TiCl3 and VCl3 sheets could display exciting half-metallicity without involving any external modification. Calculated half-metallic band-gaps for TiCl3 and VCl3 sheets are about 0.60 and 1.10 eV, respectively. Magnetic coupled calculation shows that both sheets favor the ferromagnetic order with a substantial collective character. Estimated Curie temperatures can be up to 376 and 425 K for TiCl3 and VCl3 sheets, respectively. All of these results successfully disclose two new promising two-dimensional half-metallic materials toward the application of next-generation paper-like spintronic devices. PMID:26776358

  19. Current-perpendicular-to-plane giant magnetoresistive properties in Co2Mn(Ge0.75Ga0.25)/Cu2TiAl/Co2Mn(Ge0.75Ga0.25) all-Heusler alloy pseudo spin valve

    NASA Astrophysics Data System (ADS)

    Li, S.; Takahashi, Y. K.; Sakuraba, Y.; Chen, J.; Furubayashi, T.; Mryasov, O.; Faleev, S.; Hono, K.

    2016-03-01

    Nonmagnetic Cu2TiAl (CTA) Heusler compound is proposed as a new spacer material for all-Heusler alloy current-perpendicular-to-plane giant magnetoresistance devices based on first-principle calculations. The (001)-orientated Co2Mn(Ge0.75Ga0.25) (CMGG)/CTA/CMGG epitaxial pseudo spin valve (PSV) grown on MgO(100) single crystal substrate showed relatively large MR output, ΔR A ˜5.4 mΩ μm2, which is comparable to that of the CMGG/Ag/CMGG PSV prepared with the same condition. Considering the short spin diffusion length in CTA, this result indicates a better electronic band matching for the CTA/CMGG interface than the Ag/CMGG interface in agreement with the first-principle calculation results. (001)- and (011)-orientated CMGG/CTA/CMGG PSV show similar MR outputs, indicating that the CTA spacer suppresses the orientation dependence of MR output which is usually observed in Ag-spacer CPP-PSV.

  20. Large adiabatic temperature change in magnetoelastic transition in Ni50Mn35Cr2Sn13 Heusler alloy of granular nanostructure

    NASA Astrophysics Data System (ADS)

    Prakash, H. R.; Sharma, S. K.; Ram, S.; Chatterjee, S.

    2016-05-01

    The Ni-Mn-Sn alloys are a pioneering series of magnetocaloric materials of a huge heat-energy exchanger in the martensite transition. A small additive of nearly 2 at% Cr effectively tunes the valence electron density of 8.090 electrons per atom and a large change in the entropy ΔSM←A = 4.428 J/kg-K (ΔSM→A = 3.695 J/kg-K in the recycle) at the martensite ← austenite phase transition as it is useful for the magnetic refrigeration and other cooling devices. The Cr additive tempers the tetragonality with the aspect ratio c/a = 0.903 of the martensite phase and exhibits an adiabatic temperature change of 10 K. At room temperature, a hysteresis loop exhibits 48.91 emu/g saturation magnetization and 82.1Oe coercivity.

  1. An approach to reduce the antiferromagnetic coupling of antiphase boundaries in half-metallic magnetite films

    NASA Astrophysics Data System (ADS)

    Li, P.; Cui, W. Y.; Bai, H. L.

    2013-12-01

    Highly conductive (˜105 μΩ cm) Mn doped epitaxial Fe3O4 films were fabricated by reactive sputtering. The larger size of magnetic domains compared to grain size with the increasing Mn content indicates that the partial antiferromagnetic coupling across the antiphase boundaries has been weakened, which was further demonstrated by the smaller exchange bias, faster saturated magnetization, and decreasing exchange interaction JAF. The decrease of antiferromagnetic strength originates from the larger Mn-O bond length than that of Fe-O bond. The first-principle calculation shows that the half-metallic feature (100% spin polarization) of Fe3O4 was unchanged with the incorporation of Mn atoms.

  2. Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite.

    PubMed

    Sakai, Seiji; Majumdar, Sayani; Popov, Zakhar I; Avramov, Pavel V; Entani, Shiro; Hasegawa, Yuri; Yamada, Yoichi; Huhtinen, Hannu; Naramoto, Hiroshi; Sorokin, Pavel B; Yamauchi, Yasushi

    2016-08-23

    The role of proximity contact with magnetic oxides is of particular interest from the expectations of the induced spin polarization and weak interactions at the graphene/magnetic oxide interfaces, which would allow us to achieve efficient spin-polarized injection in graphene-based spintronic devices. A combined approach of topmost-surface-sensitive spectroscopy utilizing spin-polarized metastable He atoms and ab initio calculations provides us direct evidence for the magnetic proximity effect in the junctions of single-layer graphene and half-metallic manganite La0.7Sr0.3MnO3 (LSMO). It is successfully demonstrated that in the graphene/LSMO junctions a sizable spin polarization is induced at the Fermi level of graphene in parallel to the spin polarization direction of LSMO without giving rise to a significant modification in the π band structure. PMID:27438899

  3. Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

    SciTech Connect

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Kashyap, Manish K.

    2014-04-24

    A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

  4. Half-metallic magnetism and the search for better spin valves

    SciTech Connect

    Everschor-Sitte, Karin; Sitte, Matthias; MacDonald, Allan H.

    2014-08-28

    We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First, we show that a mechanism in which spin valve performance at finite temperatures is limited by uncorrelated thermal fluctuations of magnetization orientations on opposite sides of a tunnel junction is in good agreement with recent studies of the temperature-dependent magnetoresistance of high quality tunnel junctions with MgO barriers. Using this insight, we propose a simple formula which captures the advantages for spin-valve optimization of using materials with a high spin polarization of Fermi-level tunneling electrons, and of using materials with high ferromagnetic transition temperatures. We conclude that half-metallic ferromagnets can yield better spin-value performance than current elemental transition metal ferromagnet/MgO systems only if their ferromagnetic transition temperatures exceed ∼950 K.

  5. An approach to reduce the antiferromagnetic coupling of antiphase boundaries in half-metallic magnetite films

    SciTech Connect

    Li, P.; Cui, W. Y.; Bai, H. L.

    2013-12-07

    Highly conductive (∼10{sup 5} μΩ cm) Mn doped epitaxial Fe{sub 3}O{sub 4} films were fabricated by reactive sputtering. The larger size of magnetic domains compared to grain size with the increasing Mn content indicates that the partial antiferromagnetic coupling across the antiphase boundaries has been weakened, which was further demonstrated by the smaller exchange bias, faster saturated magnetization, and decreasing exchange interaction J{sub AF}. The decrease of antiferromagnetic strength originates from the larger Mn-O bond length than that of Fe-O bond. The first-principle calculation shows that the half-metallic feature (100% spin polarization) of Fe{sub 3}O{sub 4} was unchanged with the incorporation of Mn atoms.

  6. Half-metallic antiferromagnetism in double perovskite BiPbCrCuO{sub 6}

    SciTech Connect

    Weng, Ke-Chuan; Wang, Y. K.

    2015-05-07

    The electronic structure and magnetic properties of BiPbCrCuO{sub 6} double perovskite are investigated based on first-principles density functional calculations with generalized gradient approximation (GGA) and GGA incorporated with Coulomb correlation interaction U (GGA + U). The results suggest the half-metallic (HM) and antiferromagnetic (AFM) properties of BiPbCrCuO{sub 6} double perovskite. The HM-AFM property of the double perovskite is caused by the double-exchange mechanism between neighboring Cr{sup 5+}(t{sub 2g}{sup 1}↓) and Cu{sup 2+}(t{sub 2g}{sup 3}↑t{sub 2g}{sup 3}↓e{sub g}{sup 2}↑e{sub g}↓) via the intermediate O{sup 2−}(2s{sup 2}2p{sup 6}) ion.

  7. Magnetic property and possible half-metal behavior in Co-doped graphene

    SciTech Connect

    Li, Zhongyao Xie, Wenze; Liu, Xingen; Wu, Yong

    2015-02-28

    The magnetic property and band structures of Co-monolayer doped graphene were examined on the basis of density-functional theory. The magnetic moment of the system is closely related to the interfacial spacing. Magnetic-nonmagnetic transition would be produced by decreasing the layer distance. Although the magnetic moment can also be reduced by increasing the lattice constant, the ground states are magnetic states under tension. Besides, the increase of lattice constant greatly enlarges the direct and indirect gaps of spin-down bands near the Fermi level. With a little increase of the Fermi level or the electron density, half-metal behavior would be expectable in the Co-doped graphene under tension.

  8. Novel half-metal and spin gapless semiconductor properties in N-doped silicene nanoribbons

    NASA Astrophysics Data System (ADS)

    Zheng, Fu-bao; Zhang, Chang-wen; Wang, Pei-ji; Li, Sheng-shi

    2013-04-01

    We carry out a spin polarized first-principles study on the energetic and electronic properties of zigzag silicene nanoribbons (ZSiNRs) doped with N atoms, as well as N and Si vacancy (VSi) complexes. The formation energy analysis shows that the doped N atom and N-VSi complex prefer the edge sites in ZSiNRs. Due to breaking the degeneracy of the spin-polarization in ZSiNR, the substitution of N for Si atom exhibits a spin gapless semiconductor (SGS) property. When the N-VSi complex is introduced forming so called pyridine- and pyrrole-like structure in ZSiNR, they also exhibit half-metal or SGS behaviors with 100% spin-polarized currents in the Fermi level. These interesting properties may further stimulate potential applications of silicene-based nanostructures in nanoelectronics.

  9. Theoretical study on anti-site defects in half-metallic zinc-blende ferromagnets

    NASA Astrophysics Data System (ADS)

    Shirai, M.; Seike, M.; Sato, K.; Katayama-Yoshida, H.

    2004-05-01

    Effects of anti-site defects in a half-metallic ferromagnet, zinc-blende CrAs, on its electronic and magnetic properties are studied theoretically based on the first-principles band-structure calculations. The magnetic moment of the anti-site Cr atom is coupled anti-ferromagnetically with that of the Cr atom at the ordinary-site, while the ferromagnetic coupling between the Cr moments at the ordinary-sites is robust against the formation of the anti-site defects. The formation of the impurity-bands in the energy gap of the minority-spin states degrades the degree of the spin-polarization at the Fermi-level.

  10. The computational design of zinc-blende half-metals and their nanostructures

    NASA Astrophysics Data System (ADS)

    Shirai, Masafumi

    2004-12-01

    The influence of atomic disorder and heterointerfaces with III-V semiconductors on the electronic and magnetic properties of zinc-blende (ZB) CrAs is studied by ab initio calculations based on density-functional theory. Antisite Cr spins are coupled antiferromagnetically with the Cr spins at the ordinary sites, while the ferromagnetic coupling between the Cr spins at the ordinary sites is robust against defect formation. The degree of spin polarization is not reduced significantly by the impurity bands formed in the minority spin energy gap. In the ZB CrAs/GaAs junction, relatively high spin polarization is retained even at the interface in contrast to usual half-metal/semiconductor heterojunctions. Complete spin polarization is also preserved throughout ZB CrAs/GaAs multilayers and it is insensitive to the substitutional disorder between Cr and Ga sites.

  11. Possible half-metallic ferromagnetism in zinc blende CrSb and CrAs (invited)

    NASA Astrophysics Data System (ADS)

    Shirai, M.

    2003-05-01

    Theoretical study based on a first-principles band structure calculation is carried out for new room-temperature ferromagnets, zinc blende CrSb and CrAs. It is found from the total-energy calculation that the ferromagnetic state is energetically favorable for both materials. By using the value of the difference in total energy between ferromagnetic and the antiferromagnetic states, the Curie temperatures of these ferromagnets are estimated as 1600-1800 K within mean-field approximation of the Heisenberg model. The magnetic moment is evaluated to be 3 Bohr magnetons per formula unit for both materials, which agrees well with the saturation moments estimated experimentally. Furthermore, these ferromagnets are half metallic, and the spin polarization at the Fermi level is almost unaffected even if spin-orbit interaction is taken into account.

  12. Stable half-metallic monolayers of FeCl{sub 2}

    SciTech Connect

    Torun, E. Sahin, H.; Singh, S. K.; Peeters, F. M.

    2015-05-11

    The structural, electronic, and magnetic properties of single layers of Iron Dichloride (FeCl{sub 2}) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl{sub 2} is 0.17 eV/unit cell more favorable than its 1H phase. The structural stability is confirmed by phonon calculations. We found that 1T-FeCl{sub 2} possess three Raman-active (130, 179, and 237 cm{sup −1}) and one infrared-active (279 cm{sup −1}) phonon branches. The electronic band dispersion of the 1T-FeCl{sub 2} is calculated using both gradient approximation of Perdew-Burke-Ernzerhof and DFT-HSE06 functionals. Both functionals reveal that the 1T-FeCl{sub 2} has a half-metallic ground state with a Curie temperature of 17 K.

  13. Tunable magnetic flux sensor using a metallic Rashba ring with half-metal electrodes

    SciTech Connect

    Chen, J.; Jalil, M. B. A.; Tan, S. G.

    2011-04-01

    We propose a magnetic field sensor consisting of a square ring made of metal with a strong Rashba spin-orbital coupling (RSOC) and contacted to half-metal electrodes. Due to the Aharonov-Casher effect, the presence of the RSOC imparts a spin-dependent geometric phase to conduction electrons in the ring. The combination of the magnetic flux emanating from the magnetic sample placed below the ring, and the Aharonov-Casher effect due to RSOC results in spin interference, which modulates the spin transport in the ring nanostructure. By using the tight-binding nonequilibrium Green's function formalism to model the transport across the nanoring detector, we theoretically show that with proper optimization, the Rashba ring can function as a sensitive and tunable magnetic probe to detect magnetic flux.

  14. Half-metallic magnetism and the search for better spin valves

    NASA Astrophysics Data System (ADS)

    Everschor-Sitte, Karin; Sitte, Matthias; MacDonald, Allan

    2015-03-01

    We propose a simple formula for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. It captures a mechanism in which spin valve performance at finite temperatures is limited by uncorrelated thermal fluctuations of magnetization orientations on opposite sides of a tunnel junction. Furthermore, it directly reveals the advantages for spin-valve optimization by using materials with a high spin polarization of Fermi-level tunneling electrons, and by using materials with high ferromagnetic transition temperatures. We show that our theory is in good agreement with recent experimental studies of the temperature-dependent magnetoresistance of high-quality tunnel junctions with MgO barriers. We conclude that half-metallic ferromagnets can yield better spin-value performance than current elemental transition metal ferromagnet/MgO systems only if their ferromagnetic transition temperatures exceed ~ 950 K .

  15. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  16. Measurement protocol dependent magnetocaloric properties in a Si-doped Mn-rich Mn-Ni-Sn-Si off-stoichiometric Heusler alloy

    NASA Astrophysics Data System (ADS)

    Ghosh, Arup; Sen, Pintu; Mandal, Kalyan

    2016-05-01

    This work reports the magnetocaloric properties in a Si-doped, Mn-rich Mn46Ni39.5Sn10Si4.5 alloy in the aspects of different measurement protocols across its martensitic and reverse transition. A good agreeable value of the magnetic entropy changes (ΔSM ˜ 20 J/kg K due to a ΔH = 50 kOe) along with large refrigerant capacity (RC ˜ 110 J/kg) has been obtained from the high field M-T measurements, which can be a very handy tool for magnetocaloric study. We have analyzed the field dependent magnetization data during heating and cooling near the structural transition for different field changes and fitted them universally using a Lorentz function. The isothermal measurement by ramping the temperature discontinuously during cooling is found to be one of the most convenient and energy efficient ways to minimize the field induced losses, which helps to achieve a very high RC in similar materials exhibiting first order phase transition. A significant amount of zero field cooled exchange bias field (˜720 Oe at 5 K) and magnetoresistance (˜-25% due to a ΔH = 80 kOe) has also been achieved from this sample.

  17. Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

    SciTech Connect

    Chen, Jiamin; Hono, K.; Furubayashi, T.; Takahashi, Y. K.; Sasaki, T. T.

    2015-05-07

    We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

  18. Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer

    NASA Astrophysics Data System (ADS)

    Chen, Jiamin; Furubayashi, T.; Takahashi, Y. K.; Sasaki, T. T.; Hono, K.

    2015-05-01

    We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co2Fe(Ge0.5Ga0.5) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (11 2 ¯ 0 ) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

  19. Evidence for localized moment picture in Mn-based Heusler compounds.

    PubMed

    Karel, J; Bernardi, F; Wang, C; Stinshoff, R; Born, N-O; Ouardi, S; Burkhardt, U; Fecher, G H; Felser, C

    2015-12-21

    X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) were used to probe the electronic structure and magnetic moment of Mn in Heusler compounds with different crystallographic structure. The results were compared with theoretical calculations of the magnetic and electronic properties, and it was found that in full and half Heusler alloys, Mn is metallic on both sublattices. The magnetic moment is large and localized when octahedrally coordinated by the main group element, consistent with previous theoretical work, and reduced when the main group coordination is tetrahedral. The magnetic and electronic properties of Mn in full and half Heusler compounds are strongly dependent on the structure and sublattice, a fact that can be exploited to design new materials.

  20. Contradictory role of the magnetic contribution in inverse magnetocaloric Heusler materials

    NASA Astrophysics Data System (ADS)

    Gottschall, Tino; Skokov, Konstantin P.; Benke, Dimitri; Gruner, Markus E.; Gutfleisch, Oliver

    2016-05-01

    In this paper, we illustrate the dilemma of inverse magnetocaloric materials using the example of Heusler alloys. For such materials, the magnetic and lattice contribution to the total entropy change are competing with each other. For the two paradigmatic Heusler systems of Ni-Mn-In and Ni-Mn-In-Co, we provide a systematic comparison of experimental data under different magnetic fields and hydrostatic pressures with magnetic and the magnetocaloric properties obtained from the Heisenberg model. This allows us to separate the lattice and the magnetic contribution to the total entropy of the martensitic transition. Our analysis reveals that a large magnetization change is parasitic, but at the same time it is necessary to drive the magnetocaloric effect. This contradicting role of the magnetic contribution—the dilemma—is a general characteristic of inverse magnetocaloric Heusler materials.

  1. Thermoelectric Properties of ZrNiSn-Based Half-Heusler Compounds

    NASA Astrophysics Data System (ADS)

    Yang, Jihui

    2002-03-01

    An increasing awareness of energy efficiency and environmental concerns has rekindled prospects for automotive and other applications of thermoelectric materials. For instance, getting “free” electric power from waste heat or obtaining cooling power from a solid-state device is very appealing for the automotive industry. ZrNiSn-based half-Heusler compounds show promising transport properties that make these materials of interest for thermoelectric power generation. The talk will focus on the effect on transport properties of alloying and doping on the various sublattices. New high temperature data will be presented that indicate that appropriately modified half-Heusler compounds possess very high power factor and relatively low thermal conductivity, leading to a dimensionless thermoelectric figure of merit ZT of 0.7 at 800 K. This is the highest ZT value for any half-Heusler compound reported so far.

  2. Thermodynamic properties and phase equilibria of selected Heusler compounds

    NASA Astrophysics Data System (ADS)

    Yin, Ming

    Heusler compounds are ternary intermetallics with many promising properties such as spin polarization and magnetic shape memory effect. A better understanding of their thermodynamic properties facilitates future design and development. Therefore, standard enthalpies of formation and heat capacities from room temperature to 1500 K of selected Heusler compounds X2YZ (X = Co, Fe, Ni, Pd, Rh, Ru; Y = Co, Cu, Fe, Hf, Mn, Ni, Ti, V, Zr; Z = Al, Ga, In, Si, Ge, Sn) and half-Heusler compounds XYSn (X = Au, Co, Fe, Ir, Ni, Pd, Pt, Rh; Y = Hf, Mn, Ti, Zr) were measured using high temperature direct reaction calorimetry. The measured standard enthalpies of formation were compared with those predicted from ab initio calculations and the extended semi-empirical Miedema's model. Trends in standard enthalpy of formation with respect to the periodic classification of elements were discussed. The effect of a fourth element (Co, Cu, Fe, Pd; Ti, V; Al, Ga, In, Si, Ge) on the standard enthalpy of formation of Ni2MnSn was also investigated. Lattice parameters of the compounds with an L21 structure were determined using X-ray powder diffraction analysis. Differential scanning calorimetry was used to determine melting points and phase transformation temperatures. Phase relationships were investigated using scanning electron microscopy with an energy dispersive spectrometer. The isothermal section of the Fe-Sn-Ti ternary system at 873 K was established using equilibrated alloys. Three ternary compounds including the Heusler compound Fe2SnTi were observed. A new ternary compound Fe5Sn9Ti 6 was reported and the crystal structure of FeSnTi2 was determined for the first time.

  3. Effects of Rh on the thermoelectric performance of the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

    2010-05-15

    We show that Rh substitution at the Co site in Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} (0<=x<=1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr{sub 0.5}Hf{sub 0.5}RhSb{sub 0.99}Sn{sub 0.01}. The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler materials prepared by solid state reaction at 1173 K.

  4. First-principles study on half-metallic zinc-blende CrS and its (001) surface

    NASA Astrophysics Data System (ADS)

    Xu, Bin; Chen, Leiming

    2016-11-01

    Half-metallic magnets with complete (100%) spin polarization have attracted growing interest due to the potential in spintronic applications. In this paper, we use the first-principles calculations to explain the seeming contradiction between the recent experimental ferromagnetism (Demper et al., 2012 [22]) and the previous theoretical antiferromagnetic ground state for half-metallic zinc-blende CrS, and the experimental ferromagnetism of zinc-blende CrS arises from the substrate effect. We also show that both Cr- and S-terminated (001) surfaces of CrS preserve the bulk half-metallicity. The calculated surface energy indicates that the S-terminated (001) surface is more stable than the Cr-terminated (001) surface within the whole effective Cr chemical potentials, and thus the S-terminated (001) surface is more likely than the Cr-terminated (001) surface when the CrS thin films are grown on ZnSe substrate.

  5. Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon

    NASA Astrophysics Data System (ADS)

    Zhu, Shuze; Li, Teng

    2016-03-01

    The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks active control of the resulting electronic properties. Here we reveal that a boron nitride nanoribbon with a carbon-doped edge can be made a half-metal or a spin-gapless semiconductor in a programmable fashion. The mechanical strain serves as the on/off switches for functions of half-metal and spin-gapless semiconductor to occur. Our findings shed light on how the edge doping combined with strain engineering can affect electronic properties of two-dimensional materials.

  6. First-principle study of half-metallic ferromagnetism in rocksalt XO (X=Li, K, Rb, Cs)

    NASA Astrophysics Data System (ADS)

    Lei, Gang; Liu, Xiao-Xiong; Xie, Huan-Huan; Li, Lei; Gao, Qiang; Deng, Jian-Bo

    2016-01-01

    By using first-principles calculation, we have studied the structure, electronic and magnetic properties of XO (X=Li, K, Rb, Cs) at equilibrium lattice constant in the rocksalt structure. The calculations reveal that the ferromagnetic phase of these compounds is more stable than the nonferromagnetic phase ones and they can be synthetized. All the compounds show half-metallic behaviors at equilibrium lattice constant with an integer magnetic moment of 1μB per formula unit. The half-metallic band gap of these compounds is very large and all the compounds keep their half-metallic characteristic in a wide range of lattice constants. Therefore, we expect that they can be useful in spintronic applications.

  7. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    PubMed

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-01

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics. PMID:26535800

  8. Magnetic domain configurations and huge wall resistivity in half-metallic chromium dioxide nanostructures

    NASA Astrophysics Data System (ADS)

    Zou, Xiaojing

    -wall-resistance (DWR) is determined to be three orders of magnitude larger than that of conventional 3d ferromagnets, as a result of the material's half-metallicity. We have measured DWR and the spin-torque effect along different crystallographic axes and at varying temperatures. Finally, we present the results of a theoretical analysis of this system, based on its half-metallic character and on the intrinsic magnetic behavior of CrO2.

  9. Realizing half-metallicity in K2CoF4 exfoliated nanosheets via defect engineering.

    PubMed

    Bai, Yujie; Deng, Kaiming; Kan, Erjun

    2016-06-21

    Two-dimensional (2D) materials with intriguing electronic characteristics open up tremendous opportunities for application in future nanoelectronic devices, and have become one of the hot subjects of today's research. Here, we firstly predict the possibility of realizing a 2D exfoliated ionic bonding nanosheet, namely the K2CoF4 nanosheet, based on first-principles calculations. Through analysis of the cleavage energy, in-plane stiffness and stability, the free-standing K2CoF4 nanosheet can be exfoliated in experiments. It is shown that the K2CoF4 nanosheet with K vacancy can transform into a ferromagnetic half-metal under moderate tensile strain, whereas the pristine K2CoF4 nanosheet is an antiferromagnetic semiconductor. Monte Carlo simulations based on the Heisenberg model predict that the Curie temperature for the K vacancy K2CoF4 nanosheet under 2% tensile strain is higher than room temperature. Therefore, our results suggest that the K2CoF4 nanosheet may be a promising material for spintronic and nanoelectronic applications. PMID:27231135

  10. Realizing half-metallicity in K2CoF4 exfoliated nanosheets via defect engineering.

    PubMed

    Bai, Yujie; Deng, Kaiming; Kan, Erjun

    2016-06-21

    Two-dimensional (2D) materials with intriguing electronic characteristics open up tremendous opportunities for application in future nanoelectronic devices, and have become one of the hot subjects of today's research. Here, we firstly predict the possibility of realizing a 2D exfoliated ionic bonding nanosheet, namely the K2CoF4 nanosheet, based on first-principles calculations. Through analysis of the cleavage energy, in-plane stiffness and stability, the free-standing K2CoF4 nanosheet can be exfoliated in experiments. It is shown that the K2CoF4 nanosheet with K vacancy can transform into a ferromagnetic half-metal under moderate tensile strain, whereas the pristine K2CoF4 nanosheet is an antiferromagnetic semiconductor. Monte Carlo simulations based on the Heisenberg model predict that the Curie temperature for the K vacancy K2CoF4 nanosheet under 2% tensile strain is higher than room temperature. Therefore, our results suggest that the K2CoF4 nanosheet may be a promising material for spintronic and nanoelectronic applications.

  11. Half-metallicity and ferromagnetism in penta-AlN2 nanostructure

    PubMed Central

    Li, Jiao; Fan, Xinyu; Wei, Yanpei; Liu, Haiying; Li, Shujuan; Zhao, Peng; Chen, Gang

    2016-01-01

    We have performed a detailed first-principles study of the penta-AlN2 nanostructure in the Cairo pentagonal tiling geometry, which is dynamically stable due to the absence of imaginary mode in the calculated phonon spectrum. The formation energy and the fragment cohesive energy analyses, the molecular dynamics simulations, and the mechanical property studies also support the structural stability. It could withstand the temperature as high as 1400 K and sustain the strain up to 16.1% against structural collapse. The slightly buckled penta-AlN2 is found to be a ferromagnetic semiconductor. The strain of ~9% could drive the structural transition from the buckled to the planar. Interestingly, the strain of >7% would change the conducting properties to show half-metallic characters. Furthermore, it could be also used to continuously enhance the magnetic coupling strength, rendering penta-AlN2 as a robust ferromagnetic material. These studies shed light on the possibilities in synthesizing penta-AlN2 and present many unique properties, which are worth of further studying on both theory and experiment. PMID:27616459

  12. Symmetry-derived half-metallicity in atomic and molecular junctions.

    PubMed

    Smogunov, Alexander; Dappe, Yannick J

    2015-05-13

    Achieving highly spin-polarized electric currents in atomic-scale junctions is of great importance in the field of nanoelectronics and spintronics. Based on robust symmetry considerations, we propose a mechanism to block completely one of spin conduction channels for a broad class of atomic and molecular junctions bridging two ferromagnetic electrodes. This particular behavior is due to the wave function orthogonality between spin up s-like states in ferromagnetic electrode and available π channels in the junction. As a consequence, the system would ideally yield 100% spin-polarized current, with a junction acting thus as a "half-metallic" conductor. Using ab initio electron transport calculations, we demonstrate this principle on two examples: (i) a short carbon chain and (ii) a π-conjugated molecule (polythiophene) connected either to model semi-infinite Ni wires or to realistic Ni(111) electrodes. It is also predicted that such atomic-scale junctions should lead to very high (ideally, infinite) magneto-resistance ratios since the electric current gets fully blocked if two electrodes have antiparallel magnetic alignment. PMID:25871804

  13. Local Structural Analysis of Half-Metallic Ferromagnet CrO2

    NASA Astrophysics Data System (ADS)

    Kodama, Katsuaki; Ikeda, Kazutaka; Isobe, Masahiko; Takeda, Hikaru; Itoh, Masayuki; Ueda, Yutaka; Shamoto, Shin-ichi; Otomo, Toshiya

    2016-09-01

    We have performed powder neutron diffraction on the half-metallic ferromagnet CrO2 which has a rutile-type crystal structure with a tetragonal unit cell. Although the powder diffraction pattern can be fitted by the reported crystal structure including a single Cr site, the atomic pair distribution function (PDF) can be fitted by the structural model with an orthorhombic unit cell including two kinds of inequivalent Cr sites. The difference between the valences of the two inequivalent Cr sites, δ of Cr+4±δ, estimated from the local structural parameters is about 0.06. The shapes of the two CrO6 octahedra are slightly different, suggesting the short-range orbital ordering of the Cr 3d orbitals. The lattice distortion and the improvement of the fitting to the PDF obtained using the locally distorted structure model are apparent in the region below about 10 Å, suggesting that the domain size or correlation length of the locally distorted structure is about 10 Å, roughly corresponding to the size of two unit cells.

  14. Self-assembled monolayer-functionalized half-metallic manganite for molecular spintronics.

    PubMed

    Tatay, Sergio; Barraud, Clément; Galbiati, Marta; Seneor, Pierre; Mattana, Richard; Bouzehouane, Karim; Deranlot, Cyrile; Jacquet, Eric; Forment-Aliaga, Alicia; Jegou, Pascale; Fert, Albert; Petroff, Frédéric

    2012-10-23

    (La,Sr)MnO(3) manganite (LSMO) has emerged as the standard ferromagnetic electrode in organic spintronic devices due to its highly spin-polarized character and air stability. Whereas organic semiconductors and polymers have been mainly envisaged to propagate spin information, self-assembled monolayers (SAMs) have been overlooked and should be considered as promising materials for molecular engineering of spintronic devices. Surprisingly, up to now the first key step of SAM grafting protocols over LSMO surface thin films is still missing. We report the grafting of dodecyl (C12P) and octadecyl (C18P) phosphonic acids over the LSMO half-metallic oxide. Alkylphosphonic acids form ordered self-assembled monolayers, with the phosphonic group coordinated to the surface and alkyl chains tilted from the surface vertical by 43° (C12P) and 27° (C18P). We have electrically characterized these SAMs in nanodevices and found that they act as tunnel barriers, opening the door toward the integration of alkylphosphonic acid//LSMO SAMs into future molecular/organic spintronic devices such as spin OLEDs.

  15. Half-metallicity and ferromagnetism in penta-AlN2 nanostructure.

    PubMed

    Li, Jiao; Fan, Xinyu; Wei, Yanpei; Liu, Haiying; Li, Shujuan; Zhao, Peng; Chen, Gang

    2016-01-01

    We have performed a detailed first-principles study of the penta-AlN2 nanostructure in the Cairo pentagonal tiling geometry, which is dynamically stable due to the absence of imaginary mode in the calculated phonon spectrum. The formation energy and the fragment cohesive energy analyses, the molecular dynamics simulations, and the mechanical property studies also support the structural stability. It could withstand the temperature as high as 1400 K and sustain the strain up to 16.1% against structural collapse. The slightly buckled penta-AlN2 is found to be a ferromagnetic semiconductor. The strain of ~9% could drive the structural transition from the buckled to the planar. Interestingly, the strain of >7% would change the conducting properties to show half-metallic characters. Furthermore, it could be also used to continuously enhance the magnetic coupling strength, rendering penta-AlN2 as a robust ferromagnetic material. These studies shed light on the possibilities in synthesizing penta-AlN2 and present many unique properties, which are worth of further studying on both theory and experiment. PMID:27616459

  16. Half-metallicity and ferromagnetism in penta-AlN2 nanostructure

    NASA Astrophysics Data System (ADS)

    Li, Jiao; Fan, Xinyu; Wei, Yanpei; Liu, Haiying; Li, Shujuan; Zhao, Peng; Chen, Gang

    2016-09-01

    We have performed a detailed first-principles study of the penta-AlN2 nanostructure in the Cairo pentagonal tiling geometry, which is dynamically stable due to the absence of imaginary mode in the calculated phonon spectrum. The formation energy and the fragment cohesive energy analyses, the molecular dynamics simulations, and the mechanical property studies also support the structural stability. It could withstand the temperature as high as 1400 K and sustain the strain up to 16.1% against structural collapse. The slightly buckled penta-AlN2 is found to be a ferromagnetic semiconductor. The strain of ~9% could drive the structural transition from the buckled to the planar. Interestingly, the strain of >7% would change the conducting properties to show half-metallic characters. Furthermore, it could be also used to continuously enhance the magnetic coupling strength, rendering penta-AlN2 as a robust ferromagnetic material. These studies shed light on the possibilities in synthesizing penta-AlN2 and present many unique properties, which are worth of further studying on both theory and experiment.

  17. Half-Metallic p-Electron Ferromagnetism in Ca and Sr Pnictides

    NASA Astrophysics Data System (ADS)

    Geshi, Masaaki; Kusakabe, Koichi; Nagara, Hitose; Suzuki, Naoshi

    2007-07-01

    We investigated the magnetism in Ca and Sr pnictides by using the first-principles calculations. These compounds are half-metallic and ferromagnetic (FM) when they assume the zinc-blende structure at the equilibrium lattice constant. Ferromagnetism is induced by the spin polarization of the p-orbitals of the pnictogen atoms; Ca and Sr atoms have no magnetic moments, which is different from that of CrAs or CrSb with a zinc-blende structure. To confirm the mechanism of the ferromagnetism, we have calculated a hypothetical crystal — fcc-As with two additional electrons — and have shown that fcc-As has the same magnetic moment as CaAs with a zinc-blende structure. This means that the role of Ca or Sr atoms is to provide electrons with As atoms at the fcc site and to sustain the distances between the As atoms and crystal symmetry. The FM exchange interactions between the pnictogen atoms are considered to exist in these lattices, which is briefly discussed.

  18. Robust band gap and half-metallicity in graphene with triangular perforations

    NASA Astrophysics Data System (ADS)

    Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka

    2016-06-01

    Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.

  19. Magnetic properties and spin polarization of Ru doped half metallic CrO{sub 2}

    SciTech Connect

    West, Kevin G.; Dao, Nam N. H.; Lu, Jiwei; Osofsky, Michael; Mazin, I. I.; Wolf, Stuart A.

    2015-07-06

    Chromium dioxide (CrO{sub 2}) is a half metal that is of interest for spintronic devices. It has not been synthesized through traditional physical vapor deposition (PVD) techniques because of its thermodynamic instability in low oxygen pressures. Epitaxial thin films of Ru doped tetragonal rutile CrO{sub 2} were synthesized by a PVD technique. The as-deposited Ru{sub x}Cr{sub 1−x}O{sub 2} was ferrimagnetic with the saturation magnetization moment showing a strong dependence on the Ru concentration. Curie temperature as high as 241 K has been obtained for ∼23 at. % Ru. The Ru substitution increased the electrical conductivity by increasing the minority spin concentration. The spin polarization was found to be as high as 70% for 9 at. % Ru and decreased to ∼60% with Ru concentrations up to ∼44 at. %, which is determined by the Fermi velocities of the majority and minority spins. First principle calculations were performed to understand the effect of Ru content on the properties of CrO{sub 2}. The PVD processes of Ru doped CrO{sub 2} could lead to the practical applications of the high spin polarization of CrO{sub 2} in spintronic devices.

  20. Hyperfine Magnetic Field Measurements in the Heusler Alloys COBALT(2)-TITANIUM-Z, COBALT(2)-MAGNESIUM-Z (z = Silicon, Germanium, and Tin) and COBALT(2)-MAGNESIUM- Gallium Using the Moessbauer Effect (me) and the Time Differential Perturbed Angular Correlation (tdpac) Techniques

    NASA Astrophysics Data System (ADS)

    Lahamer, Amer Said

    1990-01-01

    Measurements of the hyperfine magnetic field in a series of Heusler alloys were performed. The probes were in (^{119}Sn) and cadmium (^{111}Cd). These measurements were performed at the University of Cincinnati in Cincinnati, Ohio. Two techniques were used. The first technique was the Mossbauer effect, which was used to measure the hyperfine magnetic field on ^{119 }Sn in Co_2TiZ (Z = Si, Ge, and Sn), and the second technique was the Time Differential Perturbed Angular Correlation which was used to measure the hyperfine magnetic field on ^ {111}Cd in the Co_2MnZ (Z = Si, Ge, Sn, and Ga). The probes are expected to go to the Z sites of the alloys. The hyperfine magnetic field measurements on ^{119}Sn in Co _2TiZ (Z = Si, Ge, and Sn) alloys were done at room, dry ice and liquid nitrogen temperatures by using the Mossbauer effect technique. The data were fitted by using a least squares fit from which three parameters were extracted. These parameters are the isomer shift, the quadrupole splitting and the hyperfine magnetic field. Temperature variation measurements of the hyperfine magnetic field were performed on ^{111 }Cd in Co_2MnZ (Z = Si, Ge, Sn, and Ga) alloys. The data were fitted again by using a least squares fit from which the Larmor frequency which is related to the hyperfine magnetic field was extracted. Also the Fourier Transforms were taken of the data, on the one hand to confirm the results of the least squares fit and on the other hand to look for more frequencies. Results of the Fourier Transforms show that some of the probe, ^{111}In, did go to the Co site in the Co_2MnZ (Z = Ga, Si, and Ge) alloys. The hmf on ^{111 }Cd in the Co site of these alloys is found to be 68 kOe which is consistent with the value found in the literature. Two theoretical models were examined for the trends of hyperfine magnetic field on ^{119 }Sn and ^{111}Cd in Co_2MnZ (Z = Si, Ge, Sn, and Ga) alloys. These are the Campbell and Blandin model and the Stearns' overlap model

  1. Half-metallicity modulation of hybrid BN-C nanotubes by external electric fields: A first-principles study

    SciTech Connect

    Liang, Yunye; Kawazoe, Yoshiyuki

    2014-06-21

    On the basis of density functional theory, we systematically investigate the electronic and magnetic properties of hybrid BN-C nanotubes, C{sub x}(BN){sub y} where x + y = 12, with and without an external electric field. The BN-C nanotubes are totally distinct from pristine boron-nitride and carbon nanotubes. The electronic properties of C{sub x}(BN){sub y} change significantly with composition: from the nonmagnetic semiconductors to the half-metals. The half-metallicity is attributed to the competition among the band gap, which is related to the width of C domain, the width of BN domain, and the intrinsic polarization field. Application of the external fields can enhance or counterbalance the polarization fields and change the band gaps. The half-metallicity can be modulated. In BN-rich tubes, such as C{sub 2}(BN){sub 10}, the energy gap can be engineered from 0.50 eV to 0.95 eV and in C{sub 3}(BN){sub 9}, the ground state is converted from the nonmagnetic state into the anti-ferro-magnetic one. In other tubes, the half-metallicity can be enhanced or destroyed by different external fields. The modulation indicates that hybrid BN-C nanotubes can work as the components of the spin-filter devices.

  2. Half-metallicity modulation of hybrid BN-C nanotubes by external electric fields: a first-principles study.

    PubMed

    Liang, Yunye; Kawazoe, Yoshiyuki

    2014-06-21

    On the basis of density functional theory, we systematically investigate the electronic and magnetic properties of hybrid BN-C nanotubes, Cx(BN)y where x + y = 12, with and without an external electric field. The BN-C nanotubes are totally distinct from pristine boron-nitride and carbon nanotubes. The electronic properties of Cx(BN)y change significantly with composition: from the nonmagnetic semiconductors to the half-metals. The half-metallicity is attributed to the competition among the band gap, which is related to the width of C domain, the width of BN domain, and the intrinsic polarization field. Application of the external fields can enhance or counterbalance the polarization fields and change the band gaps. The half-metallicity can be modulated. In BN-rich tubes, such as C2(BN)10, the energy gap can be engineered from 0.50 eV to 0.95 eV and in C3(BN)9, the ground state is converted from the nonmagnetic state into the anti-ferro-magnetic one. In other tubes, the half-metallicity can be enhanced or destroyed by different external fields. The modulation indicates that hybrid BN-C nanotubes can work as the components of the spin-filter devices.

  3. Half-metallic ferromagnetism in Fe-chain-embedded zigzag boron-nitride nanoribbons with line defect

    NASA Astrophysics Data System (ADS)

    Luo, Kai-Wu; Xu, Liang; Wang, Ling-Ling; Li, Quan; Huang, Wei-Qing; Huang, Gui-Fang; Li, Xiao-Fei

    2015-11-01

    Using first-principles calculations, we investigate the electronic structures and magnetic properties of Fe-chain-embedded zigzag boron nitride nanoribbons (ZBNNRs) with different dimers (B2, N2, C2) in pentagon-octagon-pentagon line defects. The calculations show that Fe atoms spontaneously embed into the center of octagonal rings and form an atomic chain along the line defects. The ferromagnetic states are their ground state. The hydrogen-passivated systems with B2 or N2 dimers are semiconductors with small band gaps, while the C2 dimer result in half-metallic behavior. The strong interaction between the Fe-3d orbitals and the C-2p orbitals turns the ZBNNRs into half-metal from semiconductor. The half-metallic ferromagnetism are also found in other transition-metals embedded ZBNNRs, depending on the types of metals and line defects. Our results provide a means to significantly reduce the band gap of ZBNNRs, and the half-metallic ferromagnetism can be applied to devise spintronics devices.

  4. Ohmic spin injection from a half-metal at finite temperatures: Is the conductivity mismatch problem relevant?

    NASA Astrophysics Data System (ADS)

    Glasbrenner, James; Wysocki, Aleksander; Belashchenko, Kirill

    2011-03-01

    Spin injection from a normal ferromagnet into a semiconductor requires a highly-resistive tunnel or Schottky barrier at the interface to overcome the conductivity mismatch problem. This barrier limits the current that can be achieved in a device. A half-metallic ferromagnet used as a spin injector obviously overcomes this problem at zero temperature, but the situation at finite temperatures is nontrivial. We argue that the two-current model is inapplicable to half-metals, and that Ohmic (barrierless) spin injection from a half-metal is possible even at finite temperatures. This conclusion is reached using an intuitive model which sums up multiple scatterings at the interface. To complement this model, we calculate the spin injection efficiency for a half-metallic electrode using a single-band tight-binding model with explicit statistical averaging over thermal spin fluctuations. The results are contrasted with the case of a normal ferromagnet. We also consider a practically interesting case of a CrAs electrode within the tight-binding LMTO method.

  5. Lattice thermal conductivity of nanograined half-Heusler solid solutions

    NASA Astrophysics Data System (ADS)

    Geng, Huiyuan; Meng, Xianfu; Zhang, Hao; Zhang, Jian

    2014-05-01

    We report a phenomenological model of atomic weight, lattice constant, temperature, and grain size to calculate the high-temperature lattice thermal conductivity of nanograined solid solutions. The theoretical treatment developed here is reasonably consistent with the experimental results of n-type MNiSn and p-type MCoSb alloys, where M is the combination of Hf, Zr, and Ti. For disordered half-Heusler alloys with moderated grain sizes, we predict that the reduction in lattice thermal conductivity due to grain boundary scattering is independent of the scattering parameter, which characterizes the phonon scattering cross section of point defects. In addition, the lattice thermal conductivity falls off with temperature as T-1/2 around the Debye temperature.

  6. Lattice thermal conductivity of nanograined half-Heusler solid solutions

    SciTech Connect

    Geng, Huiyuan Meng, Xianfu; Zhang, Hao; Zhang, Jian

    2014-05-19

    We report a phenomenological model of atomic weight, lattice constant, temperature, and grain size to calculate the high-temperature lattice thermal conductivity of nanograined solid solutions. The theoretical treatment developed here is reasonably consistent with the experimental results of n-type MNiSn and p-type MCoSb alloys, where M is the combination of Hf, Zr, and Ti. For disordered half-Heusler alloys with moderated grain sizes, we predict that the reduction in lattice thermal conductivity due to grain boundary scattering is independent of the scattering parameter, which characterizes the phonon scattering cross section of point defects. In addition, the lattice thermal conductivity falls off with temperature as T{sup –1∕2} around the Debye temperature.

  7. David Adler Award Talk: Half-Metals, Spin Torque, and Nanorings

    NASA Astrophysics Data System (ADS)

    Chien, C. L.

    2004-03-01

    New phenomena in magnetic nanostructures, some of which have led to important technological applications in magnetoelectronics, have been realized in rapid succession in recent years. Several examples will be described in this talk. While most ferromagnetic metals are partially spin-polarized, the half-metallic ferromagnets (HMF) with only one spin band at the Fermi energy have the highest possible spin polarization of 100%. Although HMFs were theoretically predicted in 1983, they were not experimentally identified until recently using the few techniques with which the spin polarization of a metal can be determined. A spin-polarized current with its substantial angular momentum can cause spin precession and even switching in a receiving ferromagnetic entity. Aspects of the spin torque effect, as observed in continuous multilayered films as well as single-layer ferromagnetic films with a point contact, will be described. Magnetic nanorings have been proposed theoretically to alleviate problems due to the singularity at the center of a small ferromagnetic disc in the vortex state. Previous attempts on nanorings using e-beam lithography have been limited by the small number of rings of relatively large diameters ( ˜1 μm). Recently, we have developed a new lithography-less method for making arrays of a large number (10^9) of sub-100 nm nanorings, either single-layer or multilayered, with very high areal density (45 rings/μm^2). Some of the results of arrays of Co nanorings will be described. *I am very fortunate to be working with talented students and post-docs (F. Y. Yang now at Ohio State University, Y. Ji now at Argonne National Lab., G. Strijkers now at Einhoven Institute of Technology, Q. Zhu, D. L. Fan, and T. Y. Chen), some of whose results are included here. I am also indebted to G. Xiao (Brown University), J. G. Zhu (Carnegie-Mellon University), M. D. Stiles (NIST), A. Gupta (IBM), and J. M. Byers (NRL) for the privileges of collaboration, and NSF for

  8. Thermal and electronic charge transport in bulk nanostructured Zr{sub 0.25}Hf{sub 0.75}NiSn composites with full-Heusler inclusions

    SciTech Connect

    Makongo, Julien P.A.; Misra, Dinesh K.; Salvador, James R.; Takas, Nathan J.; Wang, Guoyu; Shabetai, Michael R.; Pant, Aditya; Paudel, Pravin; Uher, Ctirad; Stokes, Kevin L.; Poudeu, Pierre F.P.

    2011-11-15

    Bulk Zr{sub 0.25}Hf{sub 075}NiSn half-Heusler (HH) nanocomposites containing various mole fractions of full-Heusler (FH) inclusions were prepared by solid state reaction of pre-synthesized HH alloy with elemental Ni at 1073 K. The microstructures of spark plasma sintered specimens of the HH/FH nanocomposites were investigated using transmission electron microscopy and their thermoelectric properties were measured from 300 K to 775 K. The formation of coherent FH inclusions into the HH matrix arises from solid-state Ni diffusion into vacant sites of the HH structure. HH(1-y)/FH(y) composites with mole fraction of FH inclusions below the percolation threshold, y{approx}0.2, show increased electrical conductivity, reduced Seebeck coefficient and increased total thermal conductivity arising from gradual increase in the carrier concentration for composites. A drastic reduction ({approx}55%) in {kappa}{sub l} was observed for the composite with y=0.6 and is attributed to enhanced phonon scattering due to mass fluctuations between FH and HH, and high density of HH/FH interfaces. - Graphical abstract: Large reduction in the lattice thermal conductivity of bulk nanostructured half-Heusler/full-Heusler (Zr{sub 0.25}Hf{sub 075}NiSn/ Zr{sub 0.25}Hf{sub 075}Ni{sub 2}Sn) composites, obtained by solid-state diffusion at 1073 K of elemental Ni into vacant sites of the half-Heusler structure, arising from the formation of regions of spinodally decomposed HH and FH phases with a spatial composition modulation of {approx}2 nm. Highlights: > Bulk composites from solid state transformation of half-Heusler matrix through Ni diffusion. > Formation of coherent phase boundaries between half-Heusler matrix and full-Heusler inclusion. > Alteration of thermal and electronic transports with increasing full-Heusler inclusion. > Enhanced phonon scattering at half-Heusler/ full-Heusler phase boundaries.

  9. Computer simulations of the Ni2MnGa alloys

    NASA Astrophysics Data System (ADS)

    Breczko, Teodor M.; Nelayev, Vladislav; Dovzhik, Krishna; Najbuk, Miroslaw

    2008-07-01

    This article reports an computer simulations of physical properties of Heusler NiMnGa alloy. Computer simulation are devoted to austenite phase. The chemical composition of researched specimens causes generation martesite and austenite phases.

  10. Half-metallic digital ferromagnetic heterostructure composed of a delta-doped layer of Mn in Si.

    PubMed

    Qian, M C; Fong, C Y; Liu, Kai; Pickett, W E; Pask, J E; Yang, L H

    2006-01-20

    We propose and investigate the properties of a digital ferromagnetic heterostructure consisting of a delta-doped layer of Mn in Si, using ab initio electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half-metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. The band lineup is found to be favorable for retaining the half-metal character to near the Curie temperature. This kind of heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  11. Magnetic properties and interfacial characteristics of all-epitaxial Heusler-compound stacking structures

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Honda, S.; Hirayama, J.; Kawano, M.; Santo, K.; Tanikawa, K.; Kanashima, T.; Itoh, H.; Hamaya, K.

    2016-09-01

    We study magnetic properties and interfacial characteristics of all-epitaxial D 03-Fe3Si /L 21 - Fe3 -xMnxSi /L 21-Co2FeSi Heusler-compound trilayers grown on Ge(111) by room-temperature molecular beam epitaxy. We find that the magnetization reversal processes can be intentionally designed by changing the chemical composition of the intermediate Fe3 -xMnxSi layers because of their tunable ferromagnetic-paramagnetic phase-transition temperature. From first-principles calculations, interfacial half metallicity in the Co2FeSi layer is nearly expected when the sequence of stacking layers along <111 > of the Fe2MnSi /Co2FeSi interface includes the atomic row of L 21 - or B 2 -ordered structures. We believe that Co2FeSi /Fe2MnSi /Co2FeSi trilayer systems stacked along <111 > will open a new avenue for high-performance current-perpendicular-to-plane giant magnetoresistive devices with Heusler compounds.

  12. Theory of the Dirac half metal and quantum anomalous Hall effect in Mn-intercalated epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Li, Yuanchang; West, Damien; Huang, Huaqing; Li, Jia; Zhang, S. B.; Duan, Wenhui

    2015-11-01

    The prospect of a Dirac half metal, a material which is characterized by a band structure with a gap in one spin channel but a Dirac cone in the other, is of both fundamental interest and a natural candidate for use in spin-polarized current applications. However, while the possibility of such a material has been reported based on model calculations [H. Ishizuka and Y. Motome, Phys. Rev. Lett. 109, 237207 (2012), 10.1103/PhysRevLett.109.237207], it remains unclear what material system might realize such an exotic state. Using first-principles calculations, we show that the experimentally accessible Mn-intercalated epitaxial graphene on SiC(0001) transits to a Dirac half metal when the coverage is >1 /3 monolayer. This transition results from an orbital-selective breaking of quasi-two-dimensional inversion symmetry, leading to symmetry breaking in a single spin channel which is robust against randomness in the distribution of Mn intercalates. Furthermore, the inclusion of spin-orbit interaction naturally drives the system into the quantum anomalous Hall (QAH) state. Our results thus not only demonstrate the practicality of realizing the Dirac half metal beyond a toy model, but also open up an avenue to the realization of the QAH effect.

  13. Disorder dependence of the magnetic moment of the half-metallic ferromagnet NiMnSb from first principles

    SciTech Connect

    Orgassa, D.; Fujiwara, H.; Schulthess, T. C.; Butler, W. H.

    2000-05-01

    Using half-metallic ferromagnets in spin-dependent devices, like spin valves and ferromagnetic tunnel junctions, is expected to increase the device performance. However, using the half-metallic ferromagnet NiMnSb in such devices led to much less than ideal results. One of the possible sources for this behavior is atomic disorder. First-principles calculations of the influence of atomic disorder on the electronic structure of NiMnSb underline the sensitivity of half-metallic properties in NiMnSb to atomic disorder. In this article, we report on the disorder dependence of the total magnetic moment calculated by applying the layer Korringa-Kohn-Rostoker method in conjunction with the coherent potential approximation. We consider the following types of disorder: (1) intermixing of Ni and Mn, (2) partial occupancy of a normally vacant lattice site by Ni and Mn, and (3) partial occupancy of this site by Mn and Sb. In all cases the composition is kept stoichiometric. All three types of disorder decrease the moment monotonically with increasing disorder levels. For the experimentally seen disorder of 5% Mn and 5% Sb on the normally vacant lattice site, the total moment is decreased by 4.1%. The results suggest that precise measurement of the saturation magnetization of NiMnSb thin films can give information on the disorder. (c) 2000 American Institute of Physics.

  14. Half-metallicity and ferromagnetism of TcX (X=C, Si and Ge) in zinc blende structure

    NASA Astrophysics Data System (ADS)

    Liu, Yong; Xing, Yue; Bose, S. K.; Zhao, Yong-Hong

    2013-02-01

    We report results of a first-principles density-functional study of three binary transition-metal compounds TcX (X=C, Si and Ge) in the hypothetical cubic zinc blende (ZB) structure. Our calculations are based on the full potential linear augmented plane wave (FP-LAPW) plus local orbitals method, together with generalized gradient approximation for the exchange-correlation potential. Half-metallic (HM) ferromagnetism is observed in these binary compounds for their optimized cell volumes. In the HM state, these compounds possess an integer magnetic moment (1.000μB) per formula unit, which is one of the important characteristics of half-metallic ferromagnets (HMFs). The ferromagnetic (FM) state is found to be stable for ZB TcC, TcSi and TcGe against the nonmagnetic (NM) and antiferromagnetic (AFM) states. Calculations show that half-metallicity can be maintained for a wide range of lattice constants in these binary compounds. Density functional calculations of exchange interactions and the Curie temperatures reveal similar trends for the three compounds with respect to the lattice parameter. These compounds are compatible with the traditional semiconductors, and could be useful in spin-electronics and other applications. The most important aspect of this work is to explore the possibility of not only magnetism, but HM ferromagnetism in compounds involving NM elements and 4d transition element Tc.

  15. Transparent half metallic g-C4N3 nanotubes: potential multifunctional applications for spintronics and optical devices.

    PubMed

    Hu, Tao; Hashmi, Arqum; Hong, Jisang

    2014-08-14

    Multifunctional material brings many interesting issues because of various potential device applications. Using first principles calculations, we predict that the graphitic carbon nitride (g-C4N3) nanotubes can display multifunctional properties for both spintronics and optical device applications. Very interestingly, armchair tubes (n, n) with n = 2, 3, 4, 5, 6 and (5, 0) zigzag tubes are found to be half metallic, while zigzag tubes (n, 0) with n = 4, 6 show an antiferromagnetic ground state with band gaps. However, larger zigzag tubes of (7, 0), (8, 0), and (10, 0) are turned out to be half metallic. Along with the half metallic behavior of the tubes, those tubes seem to be optically transparent in the visible range. Due to these magnetic and optical properties, we suggest that the g-C4N3 nanotubes (CNNTs) can be used for both ideal spintronics and transparent electrode materials. We also explored the stability of magnetic state and nanotube structure using ab initio molecular dynamics. The CNNTs were found to be thermally stable and the magnetic moment was robust against the structural deformation at 300 K. Overall, our theoretical prediction in one dimensional CNNTs may provide a new physics in spintronics and also in other device applications because of potential multifunctional properties.

  16. Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

    NASA Astrophysics Data System (ADS)

    Akinaga, Hiro; Mizuguchi, Masaki; Nagao, Kazutaka; Miura, Yoshio; Shirai, Masafumi

    Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of half-metallic ferromagnets, the zinc-blende transition-metal mono-pnictides, using ab-initio calculations based on the density-functional theory. The calculations show that the total-energy difference between the ferromagnetic and the antiferromagnetic states for the zinc-blende CrAs is the largest among all the studied compounds and the highly spin-polarized electronic band structure is almost unaffected from the spin-orbit interaction.We further study the properties of zinc-blende CrAs/GaAs multilayers theoretically and show that they keep a high spin polarization. Experimental realization of the previously nonexistent zinc-blende CrAs thin film has been achieved by molecular-beam epitaxy. The crystallographic analysis is presented together with the magnetic properties of the epitaxial film. The morphological structure and the magnetic properties change sensitively depending on the substrate temperature during the growth. The room-temperature saturation magnetization of the film grown under optimum conditions reaches about 3 μB per formula unit, which agrees with the theoretically predicted value and reflects the half-metallic behavior. The epitaxial growth of multilayers consisting of 2-4 monolayers of CrAs and 2-4 monolayers GaAs with atomically flat surfaces and interfacess is demonstrated.

  17. Ba0.4Rb0.6Mn2As2 : A prototype half-metallic ferromagnet

    NASA Astrophysics Data System (ADS)

    Pandey, Abhishek; Johnston, D. C.

    2015-11-01

    Half-metallic ferromagnetism (FM) in single-crystal Ba0.39 (1 )Rb0.61 (1 )Mn2As2 below its Curie temperature TC=103 (2 ) K is reported. The magnetization M versus applied magnetic field H isotherm data at 1.8 K show complete polarization of the itinerant doped-hole magnetic moments that are introduced by substituting Rb for Ba. The material exhibits extremely soft FM, with unobservably small remanent magnetization and coercive field. Surprisingly, and contrary to typical itinerant FMs, the M (H ) data follow the Arrott-plot paradigm that is based on a mean-field theory of local-moment FMs. The in-plane electrical resistivity data are fitted well by an activated-T2 expression for T ≤TC , whereas the data sharply deviate from this model for T >TC . Hence the activated-T2 resistivity model is an excellent diagnostic for determining the onset of half-metallic FM in this compound, which in turn demonstrates the presence of a strong correlation between the electronic transport and magnetic properties of the material. Together with previous data on 40% hole-doped Ba0.6K0.4Mn2As2 , these measurements establish 61%-doped Ba0.39Rb0.61Mn2As2 as a prototype for a class of half-metallic ferromagnets in which all the itinerant carriers in the material are ferromagnetic.

  18. Phase separation of full-Heusler nanostructures in half-Heusler thermoelectrics and vibrational properties from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Page, Alexander; Uher, Ctirad; Poudeu, Pierre Ferdinand; Van der Ven, Anton

    2015-11-01

    Previous studies have indicated that the figure of merit (ZT ) of half-Heusler (HH) alloys with composition M NiSn (M =Ti , Zr, or Hf) is greatly enhanced when the alloys contain a nano-scale full-Heusler (FH) MN i2Sn second phase. However, the formation mechanism of the FHnanostructures in the HH matrix and their vibrational properties are still not well understood. We report on first-principles studies of thermodynamic phase equilibria in the MNiSn-MN i2Sn pseudobinary system as well as HH and FH vibrational properties. Thermodynamic phase diagrams as functions of temperature and Ni concentration were developed using density functional theory (DFT) combined with a cluster expansion and Monte Carlo simulations. The phase diagrams show very low excess Ni solubility in HH alloys even at high temperatures, which indicates that any Ni excess will decompose into a two-phase mixture of HH and FH compounds. Vibrational properties of HH and FH alloys are compared. Imaginary vibrational modes in the calculated phonon dispersion diagram of TiN i2Sn indicate a dynamical instability with respect to cubic [001] transverse acoustic modulations. Displacing atoms along unstable vibrational modes in cubic TiN i2Sn reveals lower-energy structures with monoclinic symmetry. The energy of the monoclinic structures is found to depend strongly on the lattice parameter. The origin of the instability in cubic TiN i2Sn and its absence in cubic ZrN i2Sn and HfN i2Sn is attributed to the small size of the Ti 3 d shells compared to those of Zr and Hf atoms. Lattice constants and heat capacities calculated by DFT agree well with experiment.

  19. A new n-type half-Heusler thermoelectric material NbCoSb

    SciTech Connect

    Huang, Lihong; He, Ran; Chen, Shuo; Zhang, Hao; Dahal, Keshab; Zhou, Haiqing; Wang, Hui; Zhang, Qinyong; Ren, Zhifeng

    2015-10-15

    Highlights: • Half-Heusler alloy NbCoSb with 19 valence electron count was studied as TE material. • It is surprising that NbCoSb is n-type. • A maximum ZT of ∼0.4 is achieved at 700 °C without optimization. • It opens up a new route to develop new half-Heusler thermoelectric materials. • It is very interesting that a traditionally thought of VEC of 18 is not required. - Abstract: We surprisingly made a new n-type thermoelectric compound NbCoSb with half-Heusler (HH) structure having valence electron count of 19, different from the traditional 18, which opens up a new route to develop new half-Heusler thermoelectric materials not following the traditional valence electron count of 18. The samples are made by arc melting followed by ball milling and hot pressing. The effect of hot pressing temperature on the thermoelectric properties of NbCoSb samples has been studied. A maximum thermoelectric figure-of-merit (ZT) of ∼0.4 is achieved at 700 °C in NbCoSb sample that is hot pressed at 1000 °C. This work add a new member to HH compounds for thermoelectric applications, although the peak ZT of ∼0.4 is still lower than that of the traditional HHs. Moreover, it is very interesting to see that a traditionally thought of valence electron counts of 18 is not required.

  20. Zinc-blende compounds of transition elements with N, P, As, Sb, S, Se, and Te as half-metallic systems

    NASA Astrophysics Data System (ADS)

    Galanakis, Iosif; Mavropoulos, Phivos

    2003-03-01

    We report systematic first-principles calculations for ordered zinc-blende compounds of the transition metal elements V, Cr, and Mn with the sp elements N, P, As, Sb, S, Se, and Te, motivated by a recent fabrication of zinc-blende CrAs, CrSb, and MnAs. They show a ferromagnetic half-metallic behavior for a wide range of lattice constants. We discuss the origin and trends of half-metallicity, present the calculated equilibrium lattice constants, and examine the half-metallic behavior of their transition element terminated (001) surfaces.

  1. Half-metallic ferromagnetism of RbSe and CsTe compounds: A density functional theory study

    NASA Astrophysics Data System (ADS)

    Xie, Huan-Huan; Ma, Run-Yu; Gao, Qiang; Li, Lei; Deng, Jian-Bo

    2016-09-01

    We investigate the electronic structures and magnetic properties of RbSe and CsTe compounds in CsCl, RS and ZB structures by using density functional theory calculation. It is shown that these two compounds exhibit half-metallic ferromagnetism with an integer magnetic moment of 1.00 μB per formula unit in all the three structures. Total energy calculations indicate the CsCl phase is more stable than the other two phases. We investigate these two compounds with CsCl structure in detail. The ferromagnetism results mainly from the spin-polarization of p states of anion Se (Te) for the two compounds.

  2. Ferromagnetic state in ultrathin orthorhombic CrAs films: Thickness, lattice distortion, and half-metallic contributions

    NASA Astrophysics Data System (ADS)

    Araújo, Alexandre A.; Laks, Bernardo; de Camargo, P. C.

    2006-11-01

    Orthorhombic CrAs thin films were investigated using first-principles spin-polarized calculations in the full-potential linearized augmented plane-wave method. Our results consider two different geometry optimization processes and show that the ferromagnetic state is favored by b -axis expansion, being more stable than the antiferromagnetic state for film thickness below approximately 24Å . The calculated maximum magnetic moment per formula unit is near 3μB and decreases with increasing film thickness, in good agreement with the observed saturation magnetization. The electronic structure of very thin films with expanded b axis suggests a half-metallic behavior.

  3. Thermodynamics of the ferromagnetic phase transition in nearly half metallic CoS2 at high pressures

    SciTech Connect

    Elkin, F. S.; Zibrov, I. P.; Novikov, A. P.; Khasanov, S. S.; Sidorov, V. A.; Petrova, A. E.; Lograsso, Thomas A.; Thompson, J. D.; Stishov, S. M.

    2013-12-06

    The volume change and heat capacity at the ferromagnetic phase transition in COS2 were measured at high pressures using X-rays generated by the Argonne synchrotron light source and by ac-calorimetry, respectively. The transition entropy, calculated on the basis of these experimental data, drops along the transition line due to quantum degradation, as required by Nernst's law. The volume change increases strongly along the transition line, which is explained by specifics of the compressibility difference of coexisting phases that results from nearly half metallic nature of the ferromagnetic phase of COS2. (C) 2013 Elsevier Ltd. All rights reserved.

  4. Band structure and transport studies of half Heusler compound DyPdBi: An efficient thermoelectric material

    NASA Astrophysics Data System (ADS)

    Krishnaveni, S.; Sundareswari, M.; Deshmukh, P. C.; Valluri, S. R.; Roberts, Ken

    2016-05-01

    The discovery of Heusler alloys has revolutionized the research field of intermetallics due to the ease with which one can derive potential candidates for multifunctional applications. During recent years, many half Heusler alloys have been investigated for their thermoelectric properties. The f electron based rare earth ternary half Heusler compound DyPdBi has its f energy levels located close to the Fermi energy level. Other research efforts have emphasized that such materials have good thermoelectric capabilities. We have explored using first principles the electronic band structure of DyPdBi by use of different exchange correlation potentials in the density functional theoretical framework. Transport coefficients that arise in the study of thermoelectric properties of DyPdBi have been calculated and illustrate its potential as an efficient thermoelectric material. Both the theoretically estimated Seebeck coefficient and the power factor agree well with the available experimental results. Our calculations illustrate that it is essential to include spin-orbit coupling in these models of f electron half Heusler materials.

  5. Effects of biaxial strain on stability and half-metallicity of Cr and Mn pnictides and chalcogenides in the zinc-blende structure

    NASA Astrophysics Data System (ADS)

    Miao, M. S.; Lambrecht, Walter R. L.

    2005-08-01

    The effects of biaxial strain, imposed by epitaxial growth conditions, on the half-metallicity properties of Cr and Mn pnictides and chalcogenides were investigated using local spin-density-functional calculations. The minority band gaps were found to decrease significantly under the biaxial strain, whereas the spin-flip gaps changed only slightly. The calculations show that under epitaxial conditions for any choice of substrate, CrSe, MnAs, MnSe, and MnTe cannot be half metallic; CrAs and CrTe are barely half metallic as their SF gap is close to zero; and only CrSb and MnSb remain distinct half metals with spin-flip gaps of 0.9 and 0.3eV , respectively.

  6. Atomically Thin B doped g-C3N4 Nanosheets: High-Temperature Ferromagnetism and calculated Half-Metallicity

    PubMed Central

    Gao, Daqiang; Liu, Yonggang; Liu, Peitao; Si, Mingsu; Xue, Desheng

    2016-01-01

    Since the graphitic carbon nitride (g-C4N3), which can be seen as C-doped graphitic-C3N4 (g-C3N4), was reported to display ferromagnetic ground state and intrinsic half-metallicity (Du et al., PRL,108,197207,2012), it has attracted numerous research interest to tune the electronic structure and magnetic properties of g-C3N4 due to their potential applications in spintronic devices. In this paper, we reported the experimentally achieving of high temperature ferromagnetism in metal-free ultrathin g-C3N4 nanosheets by introducing of B atoms. Further, first-principles calculation results revealed that the current flow in such a system was fully spin-polarized and the magnetic moment was mainly attributed to the p orbital of N atoms in B doped g-C3N4 monolayer, giving the theoretic evidence of the ferromagnetism and half-metallicity. Our finding provided a new perspective for B doped g-C3N4 spintronic devices in future. PMID:27762348

  7. Half-metallic behaviour in doped TiO2 (rutile) with double impurities: ab initio calculation

    NASA Astrophysics Data System (ADS)

    Fakhim Lamrani, A.; Belaiche, M.; Benyoussef, A.; El Kenz, A.

    2013-12-01

    Dilute magnetic oxides are without doubt among the most interesting classes of magnetic materials. However, the nature of their electronic structure and magnetic exchange is far from understood. Here, we apply the ab initio augmented spherical wave (ASW) method, with corrected generalised gradient approximation to study the electronic structure and magnetic properties of doped TiO2 rutile with double impurities. The study reveals a half-metallic ferromagnetic behaviour for Ti1-2x Cr x Mo x O2, and the local magnetic moments of the impurities and their oxidation states agree with the charge transfer between Cr and Mo, which would lead to the ferromagnetic state through the double-exchange mechanism in transition metal oxides.

  8. Fabrication and characterization of nanostructured Fe3S4, an isostructural compound of half-metallic Fe3O4

    NASA Astrophysics Data System (ADS)

    Li, Peng; Xia, Chuan; Zhang, Qiang; Guo, Zaibing; Cui, Wenyao; Bai, Haili; Alshareef, Husam N.; Zhang, Xi-xiang

    2015-06-01

    High-purity, well-crystallized spinel Fe3S4 nanoplatelets were synthesized by the hydrothermal method, and the saturation magnetic moment of Fe3S4 was measured at 1.83 μB/f.u. The temperature-dependent resistivity of Fe3S4 was metallic-like for T < 180 K: room-temperature resistivity was measured at 7.711 × 103 μΩ cm. The anomalous Hall conductivity of Fe3S4 decreased with increasing longitudinal conductivity, in sharp contrast with the accepted theory of the anomalous Hall effect in a dirty-metal regime. Furthermore, negligible spin-dependent magnetoresistance was observed. Band structure calculations confirmed our experimental observations that Fe3S4 is a metal and not a half metal as expected.

  9. Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.

    PubMed

    Yamamoto, Masafumi; Ishikawa, Takayuki; Taira, Tomoyuki; Li, Gui-fang; Matsuda, Ken-ichi; Uemura, Tetsuya

    2010-04-28

    Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co(2)MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co(2)Mn(α)Si in Co(2)Mn(α)Si/MgO/Co(2)Mn(α)Si MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co(2)Mn(α)Si electrodes from Mn-deficient compositions (α < 1) up to a certain Mn-rich composition (α > 1), demonstrating high TMR ratios of 1135% at 4.2 K and 236% at RT for MTJs with Mn-rich Co(2)Mn(α)Si electrodes with α = 1.29. Identically fabricated Co(2)Mn(β)Ge(δ)/MgO/Co(2)Mn(β)Ge(δ) (δ = 0.38) MTJs showed similar dependence of the TMR ratio on Mn composition β, demonstrating relatively high TMR ratios of 650% at 4.2 K and 220% at RT for β = 1.40. The Mn composition dependence of the TMR ratio at both 4.2 K and RT observed commonly for both Co(2)MnSi/MgO/Co(2)MnSi and Co(2)MnGe/MgO/Co(2)MnGe MTJs can be attributed to suppressed minority-spin in-gap states around the Fermi level for Mn-rich Co(2)MnSi and Co(2)MnGe electrodes.

  10. Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure

    SciTech Connect

    Gao, G. Y. Yao, K. L.

    2014-11-03

    Recently, ferromagnetic zinc-blende Mn{sub 1−x}Cr{sub x}S thin films (above x = 0.5) were fabricated experimentally on ZnSe substrate, which confirmed the previous theoretical prediction of half-metallic ferromagnetism in zinc-blende CrS. Here, we theoretically reveal that both Cr- and S-terminated (001) surfaces of the CrS thin films retain the half-metallicity. The CrS/ZnSe(001) heterogeneous junction exhibits excellent spin filtering and spin diode effects, which are explained by the calculated band structure and transmission spectra. The perfect spin transport properties indicate the potential applications of half-metallic CrS in spintronic devices. All computational results are obtained by using the density functional theory combined with nonequilibrium Green's function.

  11. Electronic and magnetic properties of Sr2MoBO6 (B=W, RE, Os): Investigation of possible half metal

    NASA Astrophysics Data System (ADS)

    Zu, Ningning; Li, Rui; Li, Qinan; Wang, Jing

    2016-02-01

    The magnetic ordering temperatures of Sr2CrBO6 (B=W, Re, Os) are the top three in the class of double perovskites so far, whereas among them only Sr2CrWO6 is a half metal. In this study, by substituting Cr with Mo, Sr2MoBO6 is investigated by using the density functional theory. The calculated results indicate that all the three Mo-based compounds exhibit the half metallic nature, in particular Sr2MoOsO6 is a compensated half metal. On the other hand, Sr2MoBO6 is estimated to have at least a comparable magnetic ordering temperature with that of Sr2CrOsO6 (experimental value of 725 K). Therefore, we expect that Sr2MoBO6 (B=W, Re, Os) would be promising candidates as spintronic materials.

  12. Local field effects in half-metals: A GW study of zincblende CrAs, MnAs, and MnC

    NASA Astrophysics Data System (ADS)

    Damewood, L.; Fong, C. Y.

    2011-03-01

    We used the GW approximation to examine the improvements of the semiconducting gap in three predicted half-metals with the zincblende structure, CrAs, MnAs and MnC, compared to density-functional theory with the generalized gradient approximation. Recognizing the differences in the local field effect between transition metals and insulators, respectively, we modeled one spin channel in a half-metal as metallic having a d character and the oppositely oriented spin channel as insulating. To demonstrate the necessity of treating these three compounds as having a d character, we also applied the GW approximation to CrAs using the nearly free electron model in the conducting channel. We found that CrAs shows the least improvement, while Mn-based half-metals exhibit comparable improvements. Physical explanations for these results are presented.

  13. First-principles calculation of the effect of atomic disorder on the electronic structure of the half-metallic ferromagnet NiMnSb

    SciTech Connect

    Orgassa, D.; Fujiwara, H.; Schulthess, T.C.; Butler, W.H.

    1999-11-01

    The electronic structure of the half-metallic ferromagnet NiMnSb with three different types of atomic disorder is calculated using the layer Korringa-Kohn-Rostoker method in conjunction with the coherent potential approximation. Results indicate the presence of minority-spin states at the Fermi energy for degrees of disorder as low as a few percent. The resulting spin polarization below 100{percent} is discussed in the light of experimental difficulties confirming the half-metallic property of NiMnSb thin films directly. {copyright} {ital 1999} {ital The American Physical Society}

  14. Atomic origin of the spin-polarization of the Co2FeAl Heusler compound

    NASA Astrophysics Data System (ADS)

    Liang, Jaw-Yeu; Lam, Tu-Ngoc; Lin, Yan-Cheng; Chang, Shu-Jui; Lin, Hong-Ji; Tseng, Yuan-Chieh

    2016-02-01

    Using synchrotron x-ray techniques, we studied the Co2FeAl spin-polarization state that generates the half-metallicity of the compound during an A2 (low-spin)  →  B2 (high-spin) phase transition. Given the advantage of element specificity of x-ray techniques, we could fingerprint the structural and magnetic cross-reactions between Co and Fe within a complex Co2FeAl structure deposited on a MgO (0 0 1) substrate. X-ray diffraction and extended x-ray absorption fine structure investigations determined that the Co atoms preferably populate the (1/4,1/4,1/4) and (3/4,3/4,3/4) sites during the development of the B2 phase. X-ray magnetic spectroscopy showed that although the two magnetic elements were ferromagnetically coupled, they interacted in a competing manner via a charge-transfer effect, which enhanced Co spin polarization at the expense of Fe spin polarization during the phase transition. This means that the spin-polarization of Co2FeAl was electronically dominated by Fe in A2 whereas the charge transfer turned the dominance to Co upon B2 formation. Helicity-dependent x-ray absorption spectra also revealed that only the minority state of Co/Fe was involved in the charge-transfer effect whereas the majority state was independent of it. Despite an overall increase of Co2FeAl magnetization, the charge-transfer effect created an undesired trade-off during the Co-Fe exchange interactions, because of the presence of twice as many X sites (Co) as Y sites (Fe) in the Heusler X 2 YZ formula. This suggests that the spin-polarization of Co2FeAl is unfortunately regulated by compromising the enhanced X (Co) sites and the suppressed Y (Fe) sites, irrespective of the development of the previously known high-spin-polarization phase of B2. This finding provides a possible cause for the limited half-metallicity of Co2FeAl discovered recently. Electronic tuning between the X and Y sites is necessary to further increase the spin-polarization, and likely the half-metallicity

  15. Half-metallic ferromagnetism in Mn-doped zigzag AlN nanoribbon from first-principles

    NASA Astrophysics Data System (ADS)

    Aghili, S.; Beiranvand, R.; Elahi, S. M.; Abolhasani, M. R.

    2016-12-01

    Based on first-principles calculations, we investigate the effect of Mn impurity on the electronic and magnetic properties of H-terminated zigzag AlN nanoribbons (ZAlNNRs), using the band structure results obtained through the full potential linearized augmented plane wave method within the density functional theory. The calculated results show that the H-terminated ZAlNNR is semiconducting and non magnetic material with a direct band gap of about 2.78 eV. Density of state analyses shows that the top of the valence band is mainly contributed by N atoms, while just beside the conduction band the whole DOS is mainly contributed by Al atoms. The main result is a transition from non-magnetic semiconducting character to half-metallic features upon doping. The Mn-doped ZAlNNR shows complete (100%) spin polarization at the Fermi level and the charge transport is totally originated from Manganese spin up electrons in the nanoribbon. These results propose potential application for the development of AlN nanoribbon-based in magneto-electronic devices.

  16. Electronic specific heat enhancement in the half-metallic ferromagnet Cro2 explained by Fermi Liquid Theory

    NASA Astrophysics Data System (ADS)

    Chura, Raul; Bedell, Kevin

    2007-03-01

    Available data on the electronic specific heat of the half-metallic ferromagnet (HMF) CrO2, show that the obtained experimental values are systematically greater than the corresponding theoretical ones calculated through various band theory methods. This discrepancy is due to the presence of many-electron correlation effects (spin fluctuations, strong electron-magnon scattering) which are not taken into account in the band theory calculations. A renormalization of the band theory results is therefore needed to account for the observed enhancement in the value of the specific heat. A microscopic many-electron approach has been proposed and explains the referred enhancement in terms of non-quasiparticle effects. It has been argued that Fermi liquid theory is not sufficient to provide the appropriate renormalization able to explain the observed enhancement in the electronic specific heat of HMFs. Contrary to this statement, we have shown that the introduction of a spin-dependent density of states, in the framework of the Fermi liquid theory for spin polarized systems, gives place to a renormalization which, indeed, provides a reasonable account of the observed enhancement in the electronic specific heat of the HMF CrO2.

  17. Elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor LaxEu1 -xO

    NASA Astrophysics Data System (ADS)

    Monteiro, Pedro M. S.; Baker, Peter J.; Hine, Nicholas D. M.; Steinke, Nina-J.; Ionescu, Adrian; Cooper, Joshaniel F. K.; Barnes, Crispin H. W.; Kinane, Christian J.; Salman, Zaher; Wildes, Andrew R.; Prokscha, Thomas; Langridge, Sean

    2015-07-01

    Here we study the effect of La-doping in EuO thin films using superconducting quantum interference device magnetometry, muon spin rotation (μ SR ) , polarized neutron reflectivity (PNR), and density functional theory (DFT). The μ SR data shows that the La0.15Eu0.85O is homogeneously magnetically ordered up to its elevated TC. It is concluded that bound magnetic polaron behavior does not explain the increase in TC and an Ruderman-Kittel-Kasuya-Yosida-like (RKKY-like) interaction is consistent with the μ SR data. The estimation of the magnetic moment by DFT simulations concurs with the results obtained by PNR, showing a reduction of the magnetic moment per LaxEu1 -xO for increasing lanthanum doping. This reduction of the magnetic moment is explained by the reduction of the number of Eu-4 f electrons present in all the magnetic interactions in EuO films. Finally, we show that an upwards shift of the Fermi energy with La or Gd doping gives rise to half-metallicity for doping levels as high as 3.2%.

  18. Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L10-MnGa/Co2FeAl Heusler bilayers

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Mizukami, S.; Zhang, X. M.; Miyazaki, T.

    2014-12-01

    In this work, we report a tailorable exchange coupling (Jex) at the Mn62Ga38/Co2FeAl interface, where Mn62Ga38 and Co2FeAl alloys are tetragonal Heusler alloy with high perpendicular magnetic anisotropy and typical cubic Heusler alloy with soft magnetism, respectively. As the post annealing temperature (Ta) is lower than 375 °C, the Jex is ferromagnetic with strength controllable from 7.5 to 0.5 erg/cm2. Interestingly, as Ta increases higher than 400 °C, an antiferromagnetic Jex of -5.5 erg/cm2 is observed. The ferromagnetic/antiferromagnetic transition is further evidenced by the spin dependent transport property of the magnetic tunnel junctions with Mn62Ga38/Co2FeAl as electrode. Based on structure characterization, the variation of Jex during annealing is discussed.

  19. Ab-initio study of half-metallic ferromagnetism in Co/Ni substituted Li2X (X=S, Se, Te) compounds

    NASA Astrophysics Data System (ADS)

    Jaiganesh, G.; Jaya, S. Mathi

    2016-11-01

    Electronic structure and half-metallic ferromagnetism of Co/Ni substituted Li2X (X=S, Se, Te) have been studied using the ab-initio method. Appropriately constructed supercells along with the full structural optimization of these cells are used for studying the effect of one and two Co/Ni ions substitution on the magnetism and electronic properties of these compounds. Our results reveal that the Co/Ni ions can induce ferromagnetic ground state in these compounds. Both one and two Co/Ni ions substituted Li2X (X=S, Se, Te) exhibit half-metallic behavior (except for Co substituted Te systems), thereby exhibiting 100% spin polarization. We further observed that the electron correlation effects on these materials do not affect the half-metallic ferromagnetism of these compounds. Curie temperature (Tc) of these compounds is also estimated. The Co/Ni substituted Li2X (X=S, Se, Te) compounds are thus an interesting class of half-metallic materials that deserve further studies.

  20. Effect of interfacial defects on the electronic and magnetic properties of epitaxial CrAs/InAs and CrAs/CdSe half-metallic multilayers

    NASA Astrophysics Data System (ADS)

    Galanakis, I.; Lekkas, I.

    2010-09-01

    We present an extended study of single impurity atoms at the interface between the half-metallic ferromagnetic zinc-blende CrAs compound and the zinc-blende binary InAs and CdSe semiconductors in the form of very thin multilayers. Contrary to the case of impurities in the perfect bulk CrAs studied in Galanakis and Pouliasis [J. Magn. Magn. Mater. 321 (2009) 1084] defects at the interfaces do not alter in general the half-metallic character of the perfect systems. The only exception are Void impurities at Cr or In(Cd) sites which lead, due to the lower-dimensionality of the interfaces with respect to the bulk CrAs, to a shift of the p bands of the nearest neighboring As(Se) atom to higher energies and thus to the loss of the half-metallicity. But Void impurities are Schottky-type and should exhibit high formation energies and thus we expect the interfaces in the case of thin multilayers to exhibit a robust half-metallic character.

  1. Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl.

    PubMed

    Ouardi, Siham; Fecher, Gerhard H; Felser, Claudia; Kübler, Jürgen

    2013-03-01

    Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

  2. Ultralow Thermal Conductivity in Full Heusler Semiconductors.

    PubMed

    He, Jiangang; Amsler, Maximilian; Xia, Yi; Naghavi, S Shahab; Hegde, Vinay I; Hao, Shiqiang; Goedecker, Stefan; Ozoliņš, Vidvuds; Wolverton, Chris

    2016-07-22

    Semiconducting half and, to a lesser extent, full Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full Heusler compounds with ten valence electrons (X_{2}YZ, X=Ca, Sr, and Ba; Y=Au and Hg; Z=Sn, Pb, As, Sb, and Bi) through high-throughput ab initio screening. These new compounds exhibit ultralow lattice thermal conductivity κ_{L} close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials.

  3. Ultralow Thermal Conductivity in Full Heusler Semiconductors.

    PubMed

    He, Jiangang; Amsler, Maximilian; Xia, Yi; Naghavi, S Shahab; Hegde, Vinay I; Hao, Shiqiang; Goedecker, Stefan; Ozoliņš, Vidvuds; Wolverton, Chris

    2016-07-22

    Semiconducting half and, to a lesser extent, full Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full Heusler compounds with ten valence electrons (X_{2}YZ, X=Ca, Sr, and Ba; Y=Au and Hg; Z=Sn, Pb, As, Sb, and Bi) through high-throughput ab initio screening. These new compounds exhibit ultralow lattice thermal conductivity κ_{L} close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials. PMID:27494488

  4. Ultralow Thermal Conductivity in Full Heusler Semiconductors

    NASA Astrophysics Data System (ADS)

    He, Jiangang; Amsler, Maximilian; Xia, Yi; Naghavi, S. Shahab; Hegde, Vinay I.; Hao, Shiqiang; Goedecker, Stefan; OzoliĆš, Vidvuds; Wolverton, Chris

    2016-07-01

    Semiconducting half and, to a lesser extent, full Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full Heusler compounds with ten valence electrons (X2Y Z , X =Ca , Sr, and Ba; Y =Au and Hg; Z =Sn , Pb, As, Sb, and Bi) through high-throughput ab initio screening. These new compounds exhibit ultralow lattice thermal conductivity κL close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials.

  5. Half-Heusler semiconductors as piezoelectrics.

    PubMed

    Roy, Anindya; Bennett, Joseph W; Rabe, Karin M; Vanderbilt, David

    2012-07-20

    We use a first-principles rational-design approach to demonstrate the potential of semiconducting half-Heusler compounds as a previously unrecognized class of piezoelectric materials. We perform a high-throughput scan of a large number of compounds, testing for insulating character and calculating structural, dielectric, and piezoelectric properties. Our results provide guidance for the experimental realization and characterization of high-performance materials in this class that may be suitable for practical applications.

  6. Investigations on the electronic transport and piezoresistivity properties of Ni{sub 2−X}Mn{sub 1+X}Ga (X = 0 and 0.15) Heusler alloys under hydrostatic pressure

    SciTech Connect

    Devarajan, U.; Kalai Selvan, G.; Sivaprakash, P.; Arumugam, S.; Singh, Sanjay; Esakki Muthu, S.; Roy Barman, S.

    2014-12-22

    The resisitivity of Ni{sub 2−X}Mn{sub 1+X}Ga (X = 0 and 0.15) magnetic shape memory alloys has been investigated as a function of temperature (4–300 K) and hydrostatic pressure up to 30 kilobars. The resistivity is suppressed (X = 0) and enhanced (X = 0.15) with increasing pressure. A change in piezoresistivity with respect to pressure and temperature is observed. The negative and positive piezoresistivity increases with pressure for both the alloys. The residual resistivity and electron-electron scattering factor as a function of pressure reveal that for Ni{sub 2}MnGa the electron-electron scattering is predominant, while the X = 0.15 specimen is dominated by the electron-magnon scattering. The value of electron-electron scattering factor is positive for both the samples, and it is decreasing (negative trend) for Ni{sub 2}MnGa and increasing (positive trend) for X = 0.15 with pressure. The martensite transition temperature is found to be increased with the application of external pressure for both samples.

  7. Electronic structures and magnetisms of the Co2TiSb1-xSnx (x = 0, 0.25, 0.5) Heusler alloys: A theoretical study of the shape-memory behavior

    NASA Astrophysics Data System (ADS)

    Wang, Li-Ying; Dai, Xue-Fang; Wang, Xiao-Tian; Lin, Ting-Ting; Chen, Lei; Liu, Ran; Cui, Yu-Ting; Liu, Guo-Dong

    2015-12-01

    The total energy, electronic structures, and magnetisms of the AlCu2Mn-type Co2TiSb1-xSnx (x = 0, 0.25, 0.5) with the different lattice parameter ratios of c/a are studied by using the first-principles calculations. It is found that the phase transformation from the cubic to the tetragonal structure lowers the total energy, indicating that the martensitic phase is more stable and that a phase transition from austenite to martensite may happen at a lower temperature. Thus, a ferromagnetic shape memory effect can be expected to occur in these alloys. The AlCu2Mn-type Co2TiSb1-xSnx (x = 0, 0.25, 0.5) alloys are weak ferrimagnets in the austenitic phase and martensitic phase. Project supported by the Chongqing City Funds for Distinguished Young Scientists, China (Grant No. cstc2014jcyjjq50003), the Basic and Frontier Research Project of Chongqing City, China (Grant No. cstc2013jjB50001), the Project of Chongqing Normal University, China (Grant No. 13XLB030), and the Project of Scientific Research for High Level Talent in Colleges and Universities of Hebei Province, China (Grant No. GCC2014042).

  8. Alloy

    NASA Astrophysics Data System (ADS)

    Cabeza, Sandra; Garcés, Gerardo; Pérez, Pablo; Adeva, Paloma

    2014-07-01

    The Mg98.5Gd1Zn0.5 alloy produced by a powder metallurgy route was studied and compared with the same alloy produced by extrusion of ingots. Atomized powders were cold compacted and extruded at 623 K and 673 K (350 °C and 400 °C). The microstructure of extruded materials was characterized by α-Mg grains, and Mg3Gd and 14H-LPSO particles located at grain boundaries. Grain size decreased from 6.8 μm in the extruded ingot, down to 1.6 μm for powders extruded at 623 K (350 °C). Grain refinement resulted in an increase in mechanical properties at room and high temperatures. Moreover, at high temperatures the PM alloy showed superplasticity at high strain rates, with elongations to failure up to 700 pct.

  9. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  10. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    PubMed Central

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  11. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  12. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  13. Thermoelectric properties of semimetallic (Zr, Hf)CoSb half-Heusler phases

    NASA Astrophysics Data System (ADS)

    Xia, Y.; Bhattacharya, S.; Ponnambalam, V.; Pope, A. L.; Poon, S. J.; Tritt, T. M.

    2000-08-01

    Unlike semiconducting TiCoSb, ZrCoSb and HfCoSb half-Heusler phases are semimetallic below room temperature and exhibit small Seebeck coefficients of ˜-10 μV/K at 300 K. However, upon substituting (doping) the Co and Sb sites with Pt and Sn, respectively, much larger thermopowers (S) are obtained. For ZrCoSb, S reaches -110 and +130 μV/K while resistivity ρ decreases from ˜5×104 μΩ cm in the undoped phase to 1-2×103 μΩ cm in the substituted phases at 300 K. The lowest thermal conductivity obtained in the substituted alloys is ˜3.0 W/m K at 300 K, which is among the lowest reported for this class of structural phases. There are indications that the thermoelectric properties have not been optimized in these multinary alloys.

  14. A first principles study of half-metallic ferromagnetism in In1-xTixP (x = 0.06) diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Saini, G. S. S.; Kashyap, Manish K.

    2016-05-01

    A first principles approach has been used to calculate the electronic and magnetic properties of In1-xTixP (x = 0.06) diluted magnetic semiconductor (DMS) compound. The calculations have been carried out using the highly precise all electron full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potentials. The estimated results show that the Ti-doping generate robust half metallic ferromagnetism with the 100% spin polarization at Fermi level (EF) in InP. Due to this peculiar property, the resultant compound behaves as true half-metallic ferromagnet which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Ti-d states present at EF with almost negligible contribution from other atoms.

  15. Spin-polarized current effects in disordered La0.7Ba0.3MnO3 half-metal thin films

    NASA Astrophysics Data System (ADS)

    Barone, C.; Aruta, C.; Galdi, A.; Orgiani, P.; Quaranta, O.; Maritato, L.; Pagano, S.

    2010-06-01

    We have investigated by means of noise spectroscopy the transport properties of half-metal La0.7Ba0.3MnO3 (LBMO) thin films deposited on MgO substrates. A reduced metal-insulator transition temperature and a peculiar noise behaviour are observed in the films grown on MgO substrates, when compared with similar films grown on SrTiO3 substrates. In particular, a large increase in noise is observed below the metal-insulator transition temperature, associated with a current induced reduction in the excess noise level. This finding is explained in terms of the spin torque effect between regions with depressed Curie temperatures among the ferromagnetic metallic domains. The proposed theoretical model, taking into account the half-metal character of manganites, describes well the experimental data.

  16. Stability of Half-Metallic Ferromagnetism of Zinc-Blende Type CrAs and MnM (M=Si, Ge and Sn)

    NASA Astrophysics Data System (ADS)

    Sakuma, Akimasa

    2002-10-01

    By the first-principles calculations both for electronic structures and effective exchange constants, we investigate the stability of ferromagnetism of zinc-blende (ZB) type CrAs, and further examine a possibility of ferromagnetism of ZB type MnM (M=Si, Ge and Sn). ZB type CrAs, a half-metallic ferromagnet reported by Akinaga’s group [Jpn. J. Appl. Phys. 39 (2000) L1118], is found to have an effective exchange constant (J0=\\sumi\

  17. Electronic and magnetic properties of X2YZ and XYZ Heusler compounds: a comparative study of density functional theory with different exchange-correlation potentials

    NASA Astrophysics Data System (ADS)

    Rai, D. P.; Sandeep; Shankar, A.; Pradhan Sakhya, Anup; Sinha, T. P.; Khenata, R.; Ghimire, M. P.; Thapa, R. K.

    2016-07-01

    The electronic and magnetic properties of Heusler compounds X2YZ and XYZ (X = Co, Ni, Pt, Fe; Y = Mn, Cr, Vi; Z = Al, Sb, Ga) are investigated by using the density functional theory with generalized gradient approximation (GGA), GGA plus U (LSDA+U), and modified Becke-Johnson (mBJ) exchange potential. It is found that the half-metallic gaps are generally widened reasonably by LSDA+U and mBJ as compared to the conventional GGA. For the Co-based Heusler compounds the inclusion of U in GGA leads to a larger minority band gap while it is destroyed for Fe2VAl and NiMnSb. The magnetic properties of Co2VSi and Co2VSn are well defined within LSDA+U and mBJ with an exact integer value of magnetic moment. The band gaps of Fe2VAl and CoMnSb given by mBJ are in good agreement with the available experimental data of x-ray absorption spectroscopy. Except for the reasonably larger band gap, the mBJ band structure is almost same as that of GGA but is remarkably different from that of LSDA+U.

  18. Electronic and magnetic properties of X2YZ and XYZ Heusler compounds: a comparative study of density functional theory with different exchange-correlation potentials

    NASA Astrophysics Data System (ADS)

    Rai, D. P.; Sandeep; Shankar, A.; Pradhan Sakhya, Anup; Sinha, T. P.; Khenata, R.; Ghimire, M. P.; Thapa, R. K.

    2016-07-01

    The electronic and magnetic properties of Heusler compounds X2YZ and XYZ (X = Co, Ni, Pt, Fe; Y = Mn, Cr, Vi; Z = Al, Sb, Ga) are investigated by using the density functional theory with generalized gradient approximation (GGA), GGA plus U (LSDA+U), and modified Becke‑Johnson (mBJ) exchange potential. It is found that the half-metallic gaps are generally widened reasonably by LSDA+U and mBJ as compared to the conventional GGA. For the Co-based Heusler compounds the inclusion of U in GGA leads to a larger minority band gap while it is destroyed for Fe2VAl and NiMnSb. The magnetic properties of Co2VSi and Co2VSn are well defined within LSDA+U and mBJ with an exact integer value of magnetic moment. The band gaps of Fe2VAl and CoMnSb given by mBJ are in good agreement with the available experimental data of x-ray absorption spectroscopy. Except for the reasonably larger band gap, the mBJ band structure is almost same as that of GGA but is remarkably different from that of LSDA+U.

  19. Antiferromagnetic half metallicity in codoped chalcopyrite semiconductors Cu(Al 1 - 2 xAxBx)Se2 (A and B are 3d transition-metal atoms)

    NASA Astrophysics Data System (ADS)

    Shahjahan, M.; Oguchi, T.

    2016-06-01

    Electronic structures and magnetic properties of group I-III-VI2 chalcopyrite-type compounds Cu(Al 1 - 2 xAxBx)Se2 are calculated using the Korringa-Kohn-Rostoker Green's function method, where A (Ti, V, Cr, Mn) and B (Fe, Co, Ni) are 3d transition metal atoms, and x is atomic concentration. We found that codoping of Cr-Co and V-Ni pairs at Al site of host CuAlSe2 exhibit antiferromagnetic (AF) half metallicity with low Curie temperature (TC). The AF half metallic property is supported by nullified net magnetic moment and compensated density of states in the minority spin direction. On the other hand, codoping of Cr-Ni, Mn-Co, V-Co, and Ti-Co pairs at Al site of host CuAlSe2 manifest ferrimagnetic half metallicity with a small net magnetization and keeping antiparallel local spin moments. In Mn-Co case TC is close to room temperature. Besides, Cr-Fe, V-Fe, and Ti-Ni codoping cases lead to an instable magnetic ordering and therefore obtain a disordered local moment (spin-glass like) state.

  20. Study of the electronic structure and half-metallicity of CaMnO3/BaTiO3 superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Kai; Jiang, Wei; Chen, Jun-Nan; Huang, Jian-Qi

    2016-09-01

    In this paper, the electronic structure, magnetic properties and half-metallicity of the CaMnO3/BaTiO3 superlattice are investigated by employing the first-principle calculation based on density functional theory within the GGA or GGA + U exchange-correlation functional. The CaMnO3/BaTiO3 superlattice is constructed by the cubic CaMnO3 and the tetragonal ferroelectric BaTiO3 growing alternately along (0 0 1) direction. The cubic CaMnO3 presents a robust half-metallicity and a metastable ferromagnetic phase. Its magnetic moment is an integral number of 3.000 μB per unit cell. However, the CaMnO3/BaTiO3 superlattice has a stable ferromagnetic phase, for which the magnetic moment is 12.000 μB per unit cell. It also retains the robust half-metallicity which mainly results from the strong hybridization between Mn and O atoms. The results show that the constructed CaMnO3/BaTiO3 superlattice exhibits superior magnetoelectric properties. It may provide a theoretical reference for the design and preparation of new multiferroic materials.