Linear and Nonlinear Optical Properties of Spherical Quantum Dots: Effects of Hydrogenic Impurity and Conduction Band Non-Parabolicity

NASA Astrophysics Data System (ADS)

Rezaei, G.; Vaseghi, B.; Doostimotlagh, N. A.

2012-03-01

Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/AlxGa1-x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.

Disorder-induced half-integer quantized conductance plateau in quantum anomalous Hall insulator-superconductor structures

NASA Astrophysics Data System (ADS)

Huang, Yingyi; Setiawan, F.; Sau, Jay D.

2018-03-01

A weak superconducting proximity effect in the vicinity of the topological transition of a quantum anomalous Hall system has been proposed as a venue to realize a topological superconductor (TSC) with chiral Majorana edge modes (CMEMs). A recent experiment [Science 357, 294 (2017), 10.1126/science.aag2792] claimed to have observed such CMEMs in the form of a half-integer quantized conductance plateau in the two-terminal transport measurement of a quantum anomalous Hall-superconductor junction. Although the presence of a superconducting proximity effect generically splits the quantum Hall transition into two phase transitions with a gapped TSC in between, in this Rapid Communication we propose that a nearly flat conductance plateau, similar to that expected from CMEMs, can also arise from the percolation of quantum Hall edges well before the onset of the TSC or at temperatures much above the TSC gap. Our Rapid Communication, therefore, suggests that, in order to confirm the TSC, it is necessary to supplement the observation of the half-quantized conductance plateau with a hard superconducting gap (which is unlikely for a disordered system) from the conductance measurements or the heat transport measurement of the transport gap. Alternatively, the half-quantized thermal conductance would also serve as a smoking-gun signature of the TSC.

The mathematics of a quantum Hamiltonian computing half adder Boolean logic gate.

PubMed

Dridi, G; Julien, R; Hliwa, M; Joachim, C

2015-08-28

The mathematics behind the quantum Hamiltonian computing (QHC) approach of designing Boolean logic gates with a quantum system are given. Using the quantum eigenvalue repulsion effect, the QHC AND, NAND, OR, NOR, XOR, and NXOR Hamiltonian Boolean matrices are constructed. This is applied to the construction of a QHC half adder Hamiltonian matrix requiring only six quantum states to fullfil a half Boolean logical truth table. The QHC design rules open a nano-architectronic way of constructing Boolean logic gates inside a single molecule or atom by atom at the surface of a passivated semi-conductor.

Transport properties of silicon complementary-metal-oxide semiconductor quantum well field-effect transistors

NASA Astrophysics Data System (ADS)

Naquin, Clint Alan

Introducing explicit quantum transport into silicon (Si) transistors in a manner compatible with industrial fabrication has proven challenging, yet has the potential to transform the performance horizons of large scale integrated Si devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors fabricated using industrial silicon complementary MOS processing. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. A folding amplifier frequency multiplier circuit using a single QW NMOS transistor to generate a folded current-voltage transfer function via a NDTC was demonstrated. Time domain data shows frequency doubling in the kHz range at room temperature, and Fourier analysis confirms that the output is dominated by the second harmonic of the input. De-embedding the circuit response characteristics from parasitic cable and contact impedances suggests that in the absence of parasitics the doubling bandwidth could be as high as 10 GHz in a monolithic integrated circuit, limited by the transresistance magnitude of the QW NMOS. This is the first example of a QW device fabricated by mainstream Si CMOS technology being used in a circuit application and establishes the feasibility

Effect of confinement potential on exciton diamagnetism in the perspective of constituent carriers in a Quantum Well

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2018-03-01

Diamagnetic susceptibility of excitons is investigated in the perspective of the electron and hole separation along the lateral (ρ) and normal direction (z) of a GaAs/AlxGa1-xAs quantum well. Using a variational technique, the spatial extensions of these carriers has been observed. The coulomb interaction of the carriers is investigated by subjecting the carriers to three confinement potentials, Square (SQW), Parabolic (PQW) and Triangular Quantum Wells (TQW). The stability of the exciton has been estimated by observing the diamagnetic susceptibility. The hole is very sensitive to confinement potential and has tremendous variations in spatial extension. Among the three confinements, TQW offers more localization and high stability to excitons. The anisotropy of band parameters and the dielectric constants of the well and barrier materials are taken into consideration.

Control of propagation of spatially localized polariton wave packets in a Bragg mirror with embedded quantum wells

NASA Astrophysics Data System (ADS)

Sedova, I. E.; Chestnov, I. Yu.; Arakelian, S. M.; Kavokin, A. V.; Sedov, E. S.

2018-01-01

We considered the nonlinear dynamics of Bragg polaritons in a specially designed stratified semiconductor structure with embedded quantum wells, which possesses a convex dispersion. The model for the ensemble of single periodically arranged quantum wells coupled with the Bragg photon fields has been developed. In particular, the generalized Gross-Pitaevskii equation with the non-parabolic dispersion has been obtained for the Bragg polariton wave function. We revealed a number of dynamical regimes for polariton wave packets resulting from competition of the convex dispersion and the repulsive nonlinearity effects. Among the regimes are spreading, breathing and soliton propagation. When the control parameters including the exciton-photon detuning, the matter-field coupling and the nonlinearity are manipulated, the dynamical regimes switch between themselves.

Inelastic light and electron scattering in parabolic quantum dots in magnetic field: Implications of generalized Kohn's theorem

NASA Astrophysics Data System (ADS)

Kushwaha, Manvir S.

2016-03-01

We investigate a one-component, quasi-zero-dimensional, quantum plasma exposed to a parabolic potential and an applied magnetic field in the symmetric gauge. If the size of such a system as can be realized in the semiconducting quantum dots is on the order of the de Broglie wavelength, the electronic and optical properties become highly tunable. Then the quantum size effects challenge the observation of many-particle phenomena such as the magneto-optical absorption, Raman intensity, and electron energy loss spectrum. An exact analytical solution of the problem leads us to infer that these many-particle phenomena are, in fact, dictated by the generalized Kohn's theorem in the long-wavelength limit. Maneuvering the confinement and/or the magnetic field furnishes the resonance energy capable of being explored with the FIR, Raman, or electron energy loss spectroscopy. This implies that either of these probes should be competent in observing the localized magnetoplasmons in the system. A deeper insight into the physics of quantum dots is paving the way for their implementation in diverse fields such as quantum computing and medical imaging.

Parabolic transformation cloaks for unbounded and bounded cloaking of matter waves

NASA Astrophysics Data System (ADS)

Chang, Yu-Hsuan; Lin, De-Hone

2014-01-01

Parabolic quantum cloaks with unbounded and bounded invisible regions are presented with the method of transformation design. The mass parameters of particles for perfect cloaking are shown to be constant along the parabolic coordinate axes of the cloaking shells. The invisibility performance of the cloaks is inspected from the viewpoints of waves and probability currents. The latter shows the controllable characteristic of a probability current by a quantum cloak. It also provides us with a simpler and more efficient way of exhibiting the performance of a quantum cloak without the solutions of the transformed wave equation. Through quantitative analysis of streamline structures in the cloaking shell, one defines the efficiency of the presented quantum cloak in the situation of oblique incidence. The cloaking models presented here give us more choices for testing and applying quantum cloaking.

Design of a high-efficiency train headlamp with low power consumption using dual half-parabolic aluminized reflectors.

PubMed

Liang, Wei-Lun; Su, Guo-Dung J

2018-02-20

We propose a train headlamp system using dual half-circular parabolic aluminized reflectors. Each half-circular reflector contains five high-efficiency and small-package light-emitting diode (LED) chips, and the halves are 180° rotationally symmetric. For traffic safety, the headlamp satisfies the Code of Federal Regulations. To predict the pattern of illumination, an analytical derivation is developed for the optical path of a ray that is perpendicular to and emitted from the center of an LED chip. This ray represents the main ray emitted from the LED chip and is located at the maximum illuminance of the spot projected by the LED source onto a screen. We then analyze the design systematically to determine the locations of the LED chips in the reflector that minimize electricity consumption while satisfying reliability constraints associated with traffic safety. Compared to a typical train headlamp system with an incandescent or halogen lamp needing several hundred watts, the proposed system only uses 20.18 W to achieve the luminous intensity requirements.

Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Y. F.; Cao, X. A., E-mail: xacao@mail.wvu.edu

2014-11-17

CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasinglymore » dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.« less

Integrated parabolic nanolenses on MicroLED color pixels

NASA Astrophysics Data System (ADS)

Demory, Brandon; Chung, Kunook; Katcher, Adam; Sui, Jingyang; Deng, Hui; Ku, Pei-Cheng

2018-04-01

A parabolic nanolens array coupled to the emission of a nanopillar micro-light emitting diode (LED) color pixel is shown to reduce the far field divergence. For a blue wavelength LED, the total emission is 95% collimated within a 0.5 numerical aperture zone, a 3.5x improvement over the same LED without a lens structure. This corresponds to a half-width at half-maximum (HWHM) line width reduction of 2.85 times. Using a resist reflow and etchback procedure, the nanolens array dimensions and parabolic shape are formed. Experimental measurement of the far field emission shows a HWHM linewidth reduction by a factor of 2x, reducing the divergence over the original LED.

Integrated parabolic nanolenses on MicroLED color pixels.

PubMed

Demory, Brandon; Chung, Kunook; Katcher, Adam; Sui, Jingyang; Deng, Hui; Ku, Pei-Cheng

2018-04-20

A parabolic nanolens array coupled to the emission of a nanopillar micro-light emitting diode (LED) color pixel is shown to reduce the far field divergence. For a blue wavelength LED, the total emission is 95% collimated within a 0.5 numerical aperture zone, a 3.5x improvement over the same LED without a lens structure. This corresponds to a half-width at half-maximum (HWHM) line width reduction of 2.85 times. Using a resist reflow and etchback procedure, the nanolens array dimensions and parabolic shape are formed. Experimental measurement of the far field emission shows a HWHM linewidth reduction by a factor of 2x, reducing the divergence over the original LED.

Influence of polarization and self-polarization charges on impurity binding energy in spherical quantum dot with parabolic confinement

NASA Astrophysics Data System (ADS)

Sarkar, Supratik; Sarkar, Samrat; Bose, Chayanika

2018-07-01

We present a general formulation of the ground state binding energy of a shallow hydrogenic impurity in spherical quantum dot with parabolic confinement, considering the effects of polarization and self energy. The variational approach within the effective mass approximation is employed here. The binding energy of an on-center impurity is computed for a GaAs/AlxGa1-xAs quantum dot as a function of the dot size with the dot barrier as parameter. The influence of polarization and self energy are also treated separately. Results indicate that the binding energy increases due to the presence of polarization charge, while decreases due to the self energy of the carrier. An overall enhancement in impurity binding energy, especially for small dots is noted.

Three examples of quantum dynamics on the half-line with smooth bouncing

NASA Astrophysics Data System (ADS)

Almeida, C. R.; Bergeron, H.; Gazeau, J.-P.; Scardua, A. C.

2018-05-01

This article is an introductory presentation of the quantization of the half-plane based on affine coherent states (ACS). The half-plane carries a natural affine symmetry, i.e. it is a homogeneous space for the 1d-affine group, and it is viewed as the phase space for the dynamics of a positive physical quantity evolving with time. Its affine symmetry is preserved due to the covariance of this type of quantization. We promote the interest of such a procedure for transforming a classical model into a quantum one, since the singularity at the origin is systematically removed, and the arbitrariness of boundary conditions for the Schrödinger operator can be easily overcome. We explain some important mathematical aspects of the method. Three elementary examples of applications are presented, the quantum breathing of a massive sphere, the quantum smooth bouncing of a charged sphere, and a smooth bouncing of "dust" sphere as a simple model of quantum Newtonian cosmology.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

The path integral on the Poincaré upper half plane and for Liouville quantum mechanics

NASA Astrophysics Data System (ADS)

Grosche, C.; Steiner, F.

1987-08-01

We present a rigorous path integral treatment of free motion on the Poincaré upper half plane. The Poincaré upper half plane, as a riemannian manifold, has recently become important in string theory and in the theory of quantum chaos. The calculation is done by a time-transformation and the use of the canonical method for determining quantum corrections to the classical lagrangian. Furthermore, we shall show that the same method also works for Liouville quantum mechanics. In both cases, the energy spectrum and the normalized wavefunctions are determined.

Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing

NASA Technical Reports Server (NTRS)

Sengupta, D.; Chang, Y. C.; Stillman, G.

1998-01-01

We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ultra-thin p-type InGaAs/InP quantum well infrared photodetector (QWIP) after growth via quantum well intermixing.

Linear and nonlinear magneto-optical absorption in a triangular quantum well

NASA Astrophysics Data System (ADS)

Tung, Luong V.; Vinh, Pham T.; Dinh, Le; Phuc, Huynh V.

2018-05-01

In this work, we study the linear and nonlinear magneto-optical absorption spectrum in a triangular quantum well (TrQW) created by the applied electric field via investigating the phonon-assisted cyclotron resonance (PACR) effect. The results are calculated for a specific Ga0.7Al0.3As/GaAs quantum well. The magneto-optical absorption coefficient (MOAC) and the full width at half maximum (FWHM) are found to be significantly dependent on the magnetic field, the electric field and the temperature. Our results showed that the MOAC and FWHM increase with the magnetic, electric fields and temperature. The obtained results also suggest a useful way to control the magneto-optical properties of TrQW by changing these parameters.

Quantum Tunneling of Magnetization in Ultrasmall Half-Metallic V3O4 Quantum Dots: Displaying Quantum Superparamagnetic State

PubMed Central

Xiao, Chong; Zhang, Jiajia; Xu, Jie; Tong, Wei; Cao, Boxiao; Li, Kun; Pan, Bicai; Su, Haibin; Xie, Yi

2012-01-01

Quantum tunneling of magnetization (QTMs), stemming from their importance for understanding materials with unconventional properties, has continued to attract widespread theoretical and experimental attention. However, the observation of QTMs in the most promising candidates of molecular magnets and few iron-based compounds is limited to very low temperature. Herein, we first highlight a simple system, ultrasmall half-metallic V3O4 quantum dots, as a promising candidate for the investigation of QTMs at high temperature. The quantum superparamagnetic state (QSP) as a high temperature signature of QTMs is observed at 16 K, which is beyond absolute zero temperature and much higher than that of conventional iron-based compounds due to the stronger spin-orbital coupling of V3+ ions bringing high anisotropy energy. It is undoubtedly that this ultrasmall quantum dots, V3O4, offers not only a promising candidate for theoretical understanding of QTMs but also a very exciting possibility for computers using mesoscopic magnets. PMID:23091695

The effects of the electric and intense laser field on the binding energies of donor impurity states (1s and 2p±) and optical absorption between the related states in an asymmetric parabolic quantum well

NASA Astrophysics Data System (ADS)

Kasapoglu, E.; Sakiroglu, S.; Sökmen, I.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.

2016-10-01

We have calculated the effects of electric and intense laser fields on the binding energies of the ground and some excited states of conduction electrons coupled to shallow donor impurities as well as the total optical absorption coefficient for transitions between 1s and 2p± electron-impurity states in a asymmetric parabolic GaAs/Ga1-x AlxAs quantum well. The binding energies were obtained using the effective-mass approximation within a variational scheme. Total absorption coefficient (linear and nonlinear absorption coefficient) for the transitions between any two impurity states were calculated from first- and third-order dielectric susceptibilities derived within a perturbation expansion for the density matrix formalism. Our results show that the effects of the electric field, intense laser field, and the impurity location on the binding energy of 1s-impurity state are more pronounced compared with other impurity states. If the well center is changed to be Lc<0 (Lc>0), the effective well width decreases (increases), and thus we can obtain the red or blue shift in the resonant peak position of the absorption coefficient by changing the intensities of the electric and non-resonant intense laser field as well as dimensions of the well and impurity positions.

Density of Electronic States in Impurity-Doped Quantum Well Wires

NASA Astrophysics Data System (ADS)

Sierra-Ortega, J.; Mikhailov, I. D.

2003-03-01

We analyze the electronic states in a cylindrical quantum well-wire (QWW) with randomly distributed neutral, D^0 and negatively charged D^- donors. In order to calculate the ground state energies of the off-center donors D^0 and D^- as a function of the distance from the axis of the QWW, we use the recently developed fractal dimension method [1]. There the problems are reduced to those similar for a hydrogen-like atom and a negative-hydrogen-like ion respectively, in an isotropic effective space with variable fractional dimension. The numerical trigonometric sweep method [2] and the three-parameter Hylleraas-type trial function are used to solve these problems. Novel curves for the density of impurity states in cylindrical QWWs with square-well, parabolic and soft-edge barrier potentials are present. Additionally we analyze the effect of the repulsive core on the density of the impurity states. [1] I.D. Mikhailov, F. J. Betancur, R. Escorcia and J. Sierra-Ortega, Phys. Stat. Sol., 234(b), 590 (2002) [2] F. J. Betancur, I. D. Mikhailov and L. E. Oliveira, J. Appl. Phys. D, 31, 3391(1998)

Investigation of germanium quantum-well light sources.

PubMed

Fei, Edward T; Chen, Xiaochi; Zang, Kai; Huo, Yijie; Shambat, Gary; Miller, Gerald; Liu, Xi; Dutt, Raj; Kamins, Theodore I; Vuckovic, Jelena; Harris, James S

2015-08-24

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

Quantum-Well Thermophotovoltaic Cells

NASA Technical Reports Server (NTRS)

Freudlich, Alex; Ignatiev, Alex

2009-01-01

Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

Laughlin states on the Poincaré half-plane and their quantum group symmetry

NASA Astrophysics Data System (ADS)

Alimohammadi, M.; Mohseni Sadjadi, H.

1996-09-01

We find the Laughlin states of the electrons on the Poincaré half-plane in different representations. In each case we show that a quantum group 0305-4470/29/17/025/img5 symmetry exists such that the Laughlin states are a representation of it. We calculate the corresponding filling factor by using the plasma analogy of the fractional quantum Hall effect.

Time-Resolved Photoluminescence Spectroscopy Of The Carrier Dynamics In GaAs/AlxGa1-xAs Quantum Wells

NASA Astrophysics Data System (ADS)

Polland, Hans J.; Kuhl, Jurgen; Gobel, Ernst O.

1988-08-01

Picosecond photoluminescence experiments at low temperature (6K) have been employed to study the trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells for different shapes of the AlxGai_xAs confinement layers. We have obtained the following results by analyzing the spectral and temporal distribution of the photoluminescence after picosecond pulse excitation: Trapping efficiency is ==, 40% for a standard ungraded cladding layer (A10.3G1.7As with constant band gap and 5nm thick wells) but increases to ,-, 60% and 100% for samp es with a spatially parabolic or linear band gap profile of the confinement layers, respectively. Trapping times are appreciably shorter than the luminescence risetime which is between 60ps to 100ps. Thus carrier trapping does not impose severe limitations on the modulation speed of single quantum well devices up to frequencies in the order of 10GHz. Similar results are obtained for a well with a width of 1.2nm. Inhomogeneities in the carrier trapping mechanism due to well width fluctuations are not observed in our samples. In the second part we describe the photoluminescence properties of GaAs/A1,Gai_x As quantum wells (x=0.3) under the influence of electric fields perpendicular to the layers. We observe a drastic red shift and a concomitant strong increase of the electron-hole recombination lifetime for well widths > lOnm due to the quantum-confined Stark effect. At high fields (50-100kV/cm) field ionization due to tunneling leads to a decrease of both the photoluminescence yield and decay time, in accordance with a simple WKB theory

Influences of temperature and impurity on excited state of bound polaron in the parabolic quantum dots

NASA Astrophysics Data System (ADS)

Xiao, Jing-Lin

2014-06-01

On the condition of strong electron-LO phonon coupling in parabolic quantum dot (QD), the first excited state energy, the excitation energy and the transition frequency between the first excited and the ground states of the bound polaron are calculated by using the linear combination operator and the unitary transformation methods. The variation of the above quantities with the temperature, the Coulombic impurity potential and the QD confinement strength are studied in detail. We find that (1) These physical quantities will increase with increasing temperature. (2) They are increasing functions of the confinement strength due to the existence of the Coulombic impurity potential between the electron and the hydrogen-like impurity. (3) We obtain three ways of tuning them via controlling the temperature, the Coulombic impurity potential and the confinement strength.

Effects of strong interactions in a half-metallic magnet: A determinant quantum Monte Carlo study

DOE PAGES

Jiang, M.; Pickett, W. E.; Scalettar, R. T.

2013-04-03

Understanding the effects of electron-electron interactions in half-metallic magnets (HMs), which have band structures with one gapped spin channel and one metallic channel, poses fundamental theoretical issues as well as having importance for their potential applications. Here we use determinant quantum Monte Carlo to study the impacts of an on-site Hubbard interaction U, finite temperature, and an external (Zeeman) magnetic field on a bilayer tight-binding model which is a half-metal in the absence of interactions, by calculating the spectral density, conductivity, spin polarization of carriers, and local magnetic properties. We quantify the effect of U on the degree of thermalmore » depolarization, and follow relative band shifts and monitor when significant gap states appear, each of which can degrade the HM character. For this model, Zeeman coupling induces, at fixed particle number, two successive transitions: compensated half-metal with spin-down band gap → metallic ferromagnet → saturated ferromagnetic insulator. However, over much of the more relevant parameter regime, the half-metallic properties are rather robust to U.« less

Dielectric response properties of parabolically-confined nanostructures in a quantizing magnetic field

NASA Astrophysics Data System (ADS)

Sabeeh, Kashif

This thesis presents theoretical studies of dielectric response properties of parabolically-confined nanostructures in a magnetic field. We have determined the retarded Schrodinger Green's function for an electron in such a parabolically confined system in the presence of a time dependent electric field and an ambient magnetic field. Following an operator equation of motion approach developed by Schwinger, we calculate the result in closed form in terms of elementary functions in direct-time representation. From the retarded Schrodinger Green's function we construct the closed-form thermodynamic Green's function for a parabolically confined quantum-dot in a magnetic field to determine its plasmon spectrum. Due to confinement and Landau quantization this system is fully quantized, with an infinite number of collective modes. The RPA integral equation for the inverse dielectric function is solved using Fredholm theory in the nondegenerate and quantum limit to determine the frequencies with which the plasmons participate in response to excitation by an external potential. We exhibit results for the variation of plasmon frequency as a function of magnetic field strength and of confinement frequency. A calculation of the van der Waals interaction energy between two harmonically confined quantum dots is discussed in terms of the dipole-dipole correlation function. The results are presented as a function of confinement strength and distance between the dots. We also rederive a result of Fertig & Halperin [32] for the tunneling-scattering of an electron through a saddle potential which is also known as a quantum point contact (QPC), in the presence of a magnetic field. Using the retarded Green's function we confirm the result for the transmission coefficient and analyze it.

Luminescence of quantum-well exciton polaritons from microstructured AlxGa1-xAs-GaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

1988-06-01

Periodic multiple-quantum-well wires have been prepared by etching five-layer quantum-well structures through a holographically prepared mask. The periodicity was 380 nm, the lateral confinement 180 nm, and the quantum-well width 13, nm. The luminescence from these microstructured systems in the frequency regime of the one-electron-one-heavy-hole transition was strongly polarized with the electric field perpendicular to the periodic structure. This effect was caused by the resonantly enhanced emission of quantum-well-exciton (QWE) polaritons. Excitation of QWE polaritons was also observed in reflection measurements on the microstructured samples.

Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

PubMed Central

Chen, Sung-Ping; Huang, Zhi-Quan; Crisostomo, Christian P.; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

2016-01-01

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. Our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect. PMID:27507248

Effect of conduction band non-parabolicity on the optical gain of quantum cascade lasers based on the effective two-band finite difference method

NASA Astrophysics Data System (ADS)

Cho, Gookbin; Kim, Jungho

2017-09-01

We theoretically investigate the effect of conduction band non-parabolicity (NPB) on the optical gain spectrum of quantum cascade lasers (QCLs) using the effective two-band finite difference method. Based on the effective two-band model to consider the NPB effect in the multiple quantum wells (QWs), the wave functions and confined energies of electron states are calculated in two different active-region structures, which correspond to three-QW single-phonon and four-QW double-phonon resonance designs. In addition, intersubband optical dipole moments and polar-optical-phonon scattering times are calculated and compared without and with the conduction band NPB effect. Finally, the calculation results of optical gain spectra are compared in the two QCL structures having the same peak gain wavelength of 8.55 μm. The gain peaks are greatly shifted to longer wavelengths and the overall gain magnitudes are slightly reduced when the NPB effect is considered. Compared with the three-QW active-region design, the redshift of the peak gain is more prominent in the four-QW active-region design, which makes use of higher electronic states for the lasing transition.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

PubMed

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

DOE PAGES

Chen, Sung-Ping; Huang, Zhi-Quan; Crisostomo, Christian P.; ...

2016-08-10

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAHmore » effect.« less

Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

NASA Astrophysics Data System (ADS)

Tiutiunnyk, A.; Mora-Ramos, M. E.; Morales, A. L.; Duque, C. M.; Restrepo, R. L.; Ungan, F.; Martínez-Orozco, J. C.; Kasapoglu, E.; Duque, C. A.

2017-02-01

In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm-1. The system proposed here is an alternative choice for the development of AlxGa1-xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.

Polarization effects on quantum levels in InN/GaN quantum wells.

PubMed

Lin, Wei; Li, Shuping; Kang, Junyong

2009-12-02

Polarization effects on quantum states in InN/GaN quantum wells have been investigated by means of ab initio calculation and spectroscopic ellipsometry. Through the position-dependent partial densities of states, our results show that the polarization modified by the strain with different well thickness leads to an asymmetry band bending of the quantum well. The quantum levels are identified via the band structures and their square wave function distributions are analyzed by the partial charge densities. Further theoretical and experimental comparison of the imaginary part of the dielectric function show that the overall transition probability increases under larger polarization fields, which can be attributable to the fact that the excited quantum states of 2h have a greater overlap with 1e states and enhance other hole quantum states in the well by a hybridization. These results would provide a new approach to improve the transition probability and light emission by enhancing the polarization fields in a proper way.

Effect of broad recombination zone in multiple quantum well structures on lifetime and efficiency of blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Seok Jae; Lee, Song Eun; Lee, Dong Hyung; Koo, Ja Ryong; Lee, Ho Won; Yoon, Seung Soo; Park, Jaehoon; Kim, Young Kwan

2014-10-01

Blue phosphorescent organic light-emitting diodes with multiple quantum well (MQW) structures (from one to four quantum wells) within an emitting layer (EML) are fabricated with charge control layers (CCLs) to control carrier movement. The distributed recombination zone and balanced charge carrier injection within EML are achieved through the MQW structure with CCLs. Remarkably, the half-decay lifetime of a blue device with three quantum wells, measured at an initial luminance of 500 cd/m2, is 3.5 times longer than that using a conventional structure. Additionally, the device’s efficiency improved. These results are explained with the effects of triplet exciton confinement and triplet-triplet annihilation within each EML.

Quantum-well exciton polariton emission from multi-quantum-well wire structures

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

Quantum cascade light emitting diodes based on type-2 quantum wells

NASA Technical Reports Server (NTRS)

Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

1997-01-01

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Quantum superalgebra slq( {2}/{1}) on the Poincaré half-plane

NASA Astrophysics Data System (ADS)

Jellal, A.

2001-02-01

We find that the symmetry algebra for the motion of a spin- {1}/{2} electron moving in the Poincaré upper half-plane ( H) under the action of a constant magnetic field (orthogonal to H) is the quantum superalgebra slq( {2}/{1}). From this, and using representation theory, we are able to determine the degree of degeneracy of the lowest Landau level when q is a root of unity.

Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

PubMed

Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

2017-07-01

We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

Dot-in-Well Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

2008-01-01

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

Quantum confinement and magnetic field effects on the electron Landé g factor in GaAs-(Ga,Al)As double quantum wells

NASA Astrophysics Data System (ADS)

Perea, J. Darío; Mejía-Salazar, J. R.; Porras-Montenegro, N.

2011-12-01

Nowadays the spin-related phenomena have attracted great attention for the possible spintronic and optoelectronic applications. The manipulation of the Landé g factor by means of the control of the electron confinement, applied magnetic field and hydrostatic pressure offers the possibility of having a wide range of ways to control single qubit operation and to have pure spin states to guarantee that no losses occur when the electron spins transport information. In this work we have performed a theoretical study of the quantum confinement (geometrical and barrier potential confinements) and growth direction applied magnetic field effects on the conduction-electron effective Landé g factor in GaAs-(Ga,Al)As double quantum wells. Our calculations of the Landé g factor are performed by using the Ogg-McCombe effective Hamiltonian, which includes non-parabolicity and anisotropy effects for the conduction-band electrons. Our theoretical results are given as function of the central barrier widths for different values of the applied magnetic fields. We have found that in this type of heterostructure the geometrical confinement commands the behavior of the electron effective Landé g factor as compared to the effect of the applied magnetic field. Present theoretical reports are in very good agreement with previous experimental and theoretical results.

Exploration of near the origin and the asymptotic behaviors of the Kohn-Sham kinetic energy density for two-dimensional quantum dot systems with parabolic confinement

NASA Astrophysics Data System (ADS)

Jana, Subrata; Samal, Prasanjit

2018-01-01

The behaviors of the positive definite Kohn-Sham kinetic energy density near the origin and at the asymptotic region play a major role in designing meta-generalized gradient approximations (meta-GGAs) for exchange in low-dimensional quantum systems. It is shown that near the origin of the parabolic quantum dot, the Kohn-Sham kinetic energy differs from its von Weizsäcker counterpart due to the p orbital contributions, whereas in the asymptotic region, the difference between the above two kinetic energy densities goes as ˜ρ/(r ) r2 . All these behaviors have been explored using the two-dimensional isotropic quantum harmonic oscillator as a test case. Several meta-GGA ingredients are then studied by making use of the above findings. Also, the asymptotic conditions for the exchange energy density and the potential at the meta-GGA level are proposed using the corresponding behaviors of the two kinetic energy densities.

Exploration of near the origin and the asymptotic behaviors of the Kohn-Sham kinetic energy density for two-dimensional quantum dot systems with parabolic confinement.

PubMed

Jana, Subrata; Samal, Prasanjit

2018-01-14

The behaviors of the positive definite Kohn-Sham kinetic energy density near the origin and at the asymptotic region play a major role in designing meta-generalized gradient approximations (meta-GGAs) for exchange in low-dimensional quantum systems. It is shown that near the origin of the parabolic quantum dot, the Kohn-Sham kinetic energy differs from its von Weizsäcker counterpart due to the p orbital contributions, whereas in the asymptotic region, the difference between the above two kinetic energy densities goes as ∼ρ(r)r 2 . All these behaviors have been explored using the two-dimensional isotropic quantum harmonic oscillator as a test case. Several meta-GGA ingredients are then studied by making use of the above findings. Also, the asymptotic conditions for the exchange energy density and the potential at the meta-GGA level are proposed using the corresponding behaviors of the two kinetic energy densities.

Efficient broad color luminescence from InGaN/GaN single quantum-well nanocolumn crystals on Si (111) substrate

NASA Astrophysics Data System (ADS)

Zhang, Wei; Zhang, Xuehua; Wang, Yongjin; Hu, Fangren

2017-10-01

Nanocolumn InGaN/GaN single quantum well crystals were deposited on Si (111) substrate with nitrified Ga dots as buffer layer. Transmission electron microscopy image shows the crystals' diameter of 100-130 nm and length of about 900 nm. Nanoscale spatial phase separation of cubic and hexagonal GaN was observed by selective area electron diffraction on the quantum well layer. Raman spectrum of the quantum well crystals proved that the crystals were fully relaxed. Room temperature photoluminescence from 450 to 750 nm and full width at half maximum of about 420 meV indicate broad color luminescence covering blue, green, yellow and red emission, which is helpful for the fabrication of tunable optoelectronic devices and colorful light emitting diodes.

Dynamics of vortices in polariton quantum fluids : From full vortices, to half vortices and vortex pairs

NASA Astrophysics Data System (ADS)

Deveaud-Plédran, Benoit

2012-02-01

Polariton quantum fluids may be created both spontaneously through a standard phase transition towards a Bose Einstein condensate, or may be resonantly driven with a well-defined speed. Thanks to the photonic component of polaritons, the properties of the quantum fluid may be accessed rather directly with in particular the possibility of detained interferometric studies. Here, I will detail the dynamics of vortices, obtained with a picosecond time resolution, in different configurations, with in particular their phase dynamics. I will show in particular the dynamics the dynamics of spontaneous creation of a vortex, the dissociation of a full vortex into two half vortices as well as the dynamics of the dissociation of a dark soliton line into a street of pairs of vortices. Work done at EPFL by a dream team of Postdocs PhD students and collaborators: K. Lagoudakis, G. Nardin, T. Paraiso, G. Grosso, F. Manni, Y L'eger, M. Portella Oberli, F. Morier-Genoud and the help of our friend theorists V, Savona, M. Vouters and T. Liew.

Exact solution of finite parabolic potential disc-like quantum dot with and without electric field R. Djelti, S. Bentata and Z. Aziz: Trimer barrier hight effect oh the nature of the electronic state of the superlatice GaAs/AlxGa1-xAs Bibhas K. Dutta and Prasanta K. Mahapatra: Study of velocity-dependent collision effects on Lamb dip and crossover resonances in three-level system

NASA Astrophysics Data System (ADS)

Hassanien, H. H.; Abdelmoly, S. S.; Elmeshad, N.

The exact series solutions of finite parabolic potential disc-like quantum dot are given in the absence and presence of uniform applied electric field. We define some normalized parameters. From the complex eigenenergy E=E0 - i G/2, due to the electric field, we calculate the resonance width G of a bounded state. The ground and the first excited state of the electron and the hole are obtained with and without the electric field. The corresponding envelope functions are presented as a function of the disc dimensionality, radius R and half-width L.

Photovoltaic driven multiple quantum well optical modulator

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

NASA Astrophysics Data System (ADS)

Łepkowski, S. P.; Bardyszewski, W.

2017-02-01

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure.

PubMed

Łepkowski, S P; Bardyszewski, W

2017-02-08

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Tunable quantum well infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Characterization and Analysis of a Multicolor Quantum Well Infrared Photodetector

DTIC Science & Technology

2006-06-01

and characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector...quantum well infrared detectors makes them suitable for use in the field. 15. NUMBER OF PAGES 67 14. SUBJECT TERMS Quantum Well, QWIP , Three...characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector

Strained quantum well photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Experimental and raytrace results for throat-to-throat compound parabolic concentrators

NASA Technical Reports Server (NTRS)

Leviton, D. B.; Leitch, J. W.

1986-01-01

Compound parabolic concentrators are nonimaging cone-shaped optics with useful angular transmission characteristics. Two cones used throat-to-throat accept radiant flux within one well-defined acceptance angle and redistribute it into another. If the entrance cone is fed with Lambertian flux, the exit cone produces a beam whose half-angle is the exit cone's acceptance angle and whose cross section shows uniform irradiance from near the exit mouth to infinity. (The pair is a beam angle transformer). The design of one pair of cones is discussed, also an experiment to map the irradiance of the emergent beam, and a raytracing program which models the cones fed by Lambertian flux. Experimental results compare favorably with raytrace results.

Quantum state transfer in double-quantum-well devices

NASA Technical Reports Server (NTRS)

Jakumeit, Jurgen; Tutt, Marcel; Pavlidis, Dimitris

1994-01-01

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Identifying the principal coefficient of parabolic equations with non-divergent form

NASA Astrophysics Data System (ADS)

Jiang, L. S.; Bian, B. J.

2005-01-01

We deal with an inverse problem of determining a coefficient a(x, t) of principal part for second order parabolic equations with non-divergent form when the solution is known. Such a problem has important applications in a large fields of applied science. We propose a well-posed approximate algorithm to identify the coefficient. The existence, uniqueness and stability of such solutions a(x, t) are proved. A necessary condition which is a couple system of a parabolic equation and a parabolic variational inequality is deduced. Our numerical simulations show that the coefficient is recovered very well.

Study of electron-related intersubband optical properties in three coupled quantum wells wires with triangular transversal section

NASA Astrophysics Data System (ADS)

Tiutiunnyk, A.; Tulupenko, V.; Akimov, V.; Demediuk, R.; Morales, A. L.; Mora-Ramos, M. E.; Radu, A.; Duque, C. A.

2015-11-01

This work concerns theoretical study of confined electrons in a low-dimensional structure consisting of three coupled triangular GaAs/AlxGa1-xAs quantum wires. Calculations have been made in the effective mass and parabolic band approximations. In the calculations a diagonalization method to find the eigenfunctions and eigenvalues of the Hamiltonian was used. A comparative analysis of linear and nonlinear optical absorption coefficients and the relative change in the refractive index was made, which is tied to the intersubband electron transitions.

Piezo-Phototronic Effect in a Quantum Well Structure.

PubMed

Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

2016-05-24

With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

[The photoluminescence characteristics of organic multilayer quantum wells].

PubMed

Zhao, De-Wei; Song, Shu-Fang; Zhao, Su-Ling; Xu, Zheng; Wang, Yong-Sheng; Xu, Xu-Rong

2007-04-01

By the use of multi-source high-vaccum organic beam deposition system, the authors prepared organic multilayer quantum well structures, which consist of alternate organic small molecule materials PBD and Alq3. Based on 4-period organic quantum wells, different samples with different thickness barriers and wells were prepared. The authors measured the lowest unoccupied molecular orbit (LUMO) and the highest occupied molecular orbit (HOMO) by electrochemistry cyclic voltammetry and optical absorption. From the energy diagrams, it seems like type-I quantum well structures of the inorganic semiconductor, in which PBD is used as a barrier layer and Alq3 as a well layer and emitter. From small angle X-ray diffraction measurements, the results indicate that these structures have high interface quality and uniformity. The photoluminescence characteristics of organic multilayer quantum wells were investigated. The PL peak has a blue-shift with the decrease of the well layer thickness. Meanwhile as the barrier thickness decreases the PL peaks of PBD disappear gradually. And the energy may be effectively transferred from PBD to Alq3, inducing an enhancement of the luminescence of Alq3.

Parabolic features and the erosion rate on Venus

NASA Technical Reports Server (NTRS)

Strom, Robert G.

1993-01-01

The impact cratering record on Venus consists of 919 craters covering 98 percent of the surface. These craters are remarkably well preserved, and most show pristine structures including fresh ejecta blankets. Only 35 craters (3.8 percent) have had their ejecta blankets embayed by lava and most of these occur in the Atla-Beta Regio region; an area thought to be recently active. parabolic features are associated with 66 of the 919 craters. These craters range in size from 6 to 105 km diameter. The parabolic features are thought to be the result of the deposition of fine-grained ejecta by winds in the dense venusian atmosphere. The deposits cover about 9 percent of the surface and none appear to be embayed by younger volcanic materials. However, there appears to be a paucity of these deposits in the Atla-Beta Regio region, and this may be due to the more recent volcanism in this area of Venus. Since parabolic features are probably fine-grain, wind-deposited ejecta, then all impact craters on Venus probably had these deposits at some time in the past. The older deposits have probably been either eroded or buried by eolian processes. Therefore, the present population of these features is probably associated with the most recent impact craters on the planet. Furthermore, the size/frequency distribution of craters with parabolic features is virtually identical to that of the total crater population. This suggests that there has been little loss of small parabolic features compared to large ones, otherwise there should be a significant and systematic paucity of craters with parabolic features with decreasing size compared to the total crater population. Whatever is erasing the parabolic features apparently does so uniformly regardless of the areal extent of the deposit. The lifetime of parabolic features and the eolian erosion rate on Venus can be estimated from the average age of the surface and the present population of parabolic features.

Exciton absorption of entangled photons in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

2013-03-01

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

The relative isoperimetric inequality on a conformally parabolic manifold with boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kesel'man, Vladimir M

2011-07-31

For an arbitrary noncompact n-dimensional Riemannian manifold with a boundary of conformally parabolic type it is proved that there exists a conformal change of metric such that a relative isoperimetric inequality of the same form as in the closed n-dimensional Euclidean half-space holds on the manifold with the new metric. This isoperimetric inequality is asymptotically sharp. Bibliography: 6 titles.

Magneto-transport study of quantum phases in wide GaAs quantum wells

NASA Astrophysics Data System (ADS)

Liu, Yang

In this thesis we study several quantum phases in very high quality two-dimensional electron systems (2DESs) confined to GaAs single wide quantum wells (QWs). In these systems typically two electric subbands are occupied. By controlling the electron density as well as the QW symmetry, we can fine tune the cyclotron and subband separation energies, so that Landau levels (LLs) belonging to different subbands cross at the Fermi energy EF. The additional subband degree of freedom enables us to study different quantum phases. Magneto-transport measurements at fixed electron density n and various QW symmetries reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall (FQH) states at LL filling factors nu = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. These q/3 states are stable and strong as long as EF lies in a ground-state (N = 0) LL, regardless of whether that level belongs to the symmetric or the anti-symmetric subband. We also observe subtle and distinct evolutions near filling factors nu = 5/2 and 7/2, as we change the density n, or the symmetry of the charge distribution. The even-denominator FQH states are observed at nu = 5/2, 7/2, 9/2 and 11/2 when EF lies in the N= 1 LLs of the symmetric subband (the S1 levels). As we increase n, the nu = 5/2 FQH state suddenly disappears and turns into a compressible state once EF moves to the spin-up, N = 0, anti-symmetric LL (the A0 ↑ level). The sharpness of this disappearance suggests a first-order transition from a FQH to a compressible state. Moreover, thanks to the renormalization of the susbband energy separation in a well with asymmetric change distribution, two LLs can get pinned to each other when they are crossing at E F. We observe a remarkable consequence of such pinning: There is a developing FQH state when the LL filling factor of the symmetric subband nuS equals 5/2 while the antisymmetric subband has filling 1 < nuA <2. Next, we study the evolution of the nu=5/2 and 7/2 FQH

Crystal Phase Quantum Well Emission with Digital Control.

PubMed

Assali, S; Lähnemann, J; Vu, T T T; Jöns, K D; Gagliano, L; Verheijen, M A; Akopian, N; Bakkers, E P A M; Haverkort, J E M

2017-10-11

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Achieving uniform efficient illumination with multiple asymmetric compound parabolic luminaires

NASA Astrophysics Data System (ADS)

Gordon, Jeffrey M.; Kashin, Peter

1994-01-01

Luminaire designs based on multiple asymmetric nonimaging compound parabolic reflectors are proposed for 2-D illumination applications that require highly uniform far-field illuminance, while ensuring maximal lighting efficiency and sharp angular cutoffs. The new designs derive from recent advances in nonimaging secondary concentrators for line-focus solar collectors. The light source is not treated as a single entity, but rather is divided into two or more separate adjoining sources. An asymmetric compound parabolic luminaire is then designed around each half-source. Attaining sharp cutoffs requires relatively large reflectors. However, severe truncation of the reflectors renders these devices as compact as many conventional luminaires, at the penalty of a small fraction of the radiation being emitted outside the nominal cutoff. The configurations that maximize the uniformity of far-field illuminance offer significant improvements in flux homogeneity relative to alternative designs to date.

Achieving uniform efficient illumination with multiple asymmetric compound parabolic luminaires

NASA Astrophysics Data System (ADS)

Gordon, Jeffrey M.; Kashin, Peter

1993-11-01

Luminaire designs based on multiple asymmetric nonimaging compound parabolic reflectors are proposed for 2-D illumination applications that require highly uniform far-field illuminance, while insuring maximal lighting efficiency and sharp angular cutoffs. The new designs derive from recent advances in nonimaging secondary concentrators for line-focus solar collectors. The light source is not treated as a single entity, but rather is divided into two or more separate adjoining sources. An asymmetric Compound Parabolic Luminaire is then designed around each half-source. Attaining sharp cutoffs requires relatively large reflectors. However, severe truncation of the reflectors renders these devices as compact as many conventional luminaires, at the penalty of a small fraction of the radiation being emitted outside the nominal cutoff. The configurations that maximize the uniformity of far-field illumination offer significant improvements in flux homogeneity relative to alternative designs to date.

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

2016-10-01

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Semiconductor quantum wells: old technology or new device functionalities

NASA Astrophysics Data System (ADS)

Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.

2009-08-01

The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Effect of interface roughness on Auger recombination in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson

2017-03-01

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

Photoluminescence from narrow InAs-AlSb quantum wells

NASA Technical Reports Server (NTRS)

Brar, Berinder; Kroemer, Herbert; Ibbetson, James; English, John H.

1993-01-01

We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

Stability of the parabolic Poincaré bundle

NASA Astrophysics Data System (ADS)

Basu, Suratno; Biswas, Indranil; Dan, Krishanu

Given a compact Riemann surface X and a moduli space Mα(Λ) of parabolic stable bundles on it of fixed determinant of complete parabolic flags, we prove that the Poincaré parabolic bundle on X × Mα(Λ) is parabolic stable with respect to a natural polarization on X × Mα(Λ).

Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double δ-doped GaAs quantum wells

NASA Astrophysics Data System (ADS)

Martínez-Orozco, J. C.; Rojas-Briseño, J. G.; Rodríguez-Magdaleno, K. A.; Rodríguez-Vargas, I.; Mora-Ramos, M. E.; Restrepo, R. L.; Ungan, F.; Kasapoglu, E.; Duque, C. A.

2017-11-01

In this paper we are reporting the computation for the Nonlinear Optical Rectification (NOR) and the Second and Third Harmonic Generation (SHG and THG) related with electronic states of asymmetric double Si-δ-doped quantum well in a GaAs matrix when this is subjected to an in-plane (x-oriented) constant magnetic field effect. The work is performed in the effective mass and parabolic band approximations in order to compute the electronic structure for the system by a diagonalization procedure. The expressions for the nonlinear optical susceptibilities, χ0(2), χ2ω(2), and χ3ω(3), are those arising from the compact matrix density formulation and stand for the NOR, SHG, and THG, respectively. This asymmetric double δ-doped quantum well potential profile actually exhibits nonzero NOR, SHG, and THG responses which can be easily controlled by the in-plane (x-direction) externally applied magnetic field. In particular we find that for the chosen configuration the harmonic generation is in the far-infrared/THz region, thus and becoming suitable building blocks for photodetectors in this range of the electromagnetic spectra.

Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

NASA Astrophysics Data System (ADS)

Gu, Y.; Zhang, Y. G.; Chen, X. Y.; Ma, Y. J.; Ji, W. Y.; Xi, S. P.; Du, B.; Shi, Y. H.; Li, A. Z.

2017-11-01

The effects of well shapes and waveguide materials on InP-based InAs quantum well lasers have been investigated. The laser structures were grown on metamorphic In0.65Al0.35As buffers. A novel trapezoidal quantum well composed of InyGa1-yAs grading and InAs layer was used to improve the quality of quantum well. Quaternary In0.65Al0.2Ga0.15As waveguide was applied instead of ternary In0.65Ga0.35As to enhance the carrier injection. The material qualities have been characterized by X-ray diffraction, transmission electron microscopy and photoluminescence measurements, while the device properties of the lasers with various structures were investigated at different temperatures. Results show that the laser performances have been improved by the use of trapezoidal quantum wells and InAlGaAs waveguides.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1-xAs quantum well structures.

PubMed

Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M; Ergun, Yuksel

2012-11-12

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1-xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form.Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

Correlations and sum rules in a half-space for a quantum two-dimensional one-component plasma

NASA Astrophysics Data System (ADS)

Jancovici, B.; Šamaj, L.

2007-05-01

This paper is the continuation of a previous one (Šamaj and Jancovici, 2007 J. Stat. Mech. P02002); for a nearly classical quantum fluid in a half-space bounded by a plain plane hard wall (no image forces), we had generalized the Wigner Kirkwood expansion of the equilibrium statistical quantities in powers of Planck's constant \\hbar . As a model system for a more detailed study, we consider the quantum two-dimensional one-component plasma: a system of charged particles of one species, interacting through the logarithmic Coulomb potential in two dimensions, in a uniformly charged background of opposite sign, such that the total charge vanishes. The corresponding classical system is exactly solvable in a variety of geometries, including the present one of a half-plane, when βe2 = 2, where β is the inverse temperature and e is the charge of a particle: all the classical n-body densities are known. In the present paper, we have calculated the expansions of the quantum density profile and truncated two-body density up to order \\hbar ^2 (instead of only to order \\hbar as in the previous paper). These expansions involve the classical n-body densities up to n = 4; thus we obtain exact expressions for these quantum expansions in this special case. For the quantum one-component plasma, two sum rules involving the truncated two-body density (and, for one of them, the density profile) have been derived, a long time ago, by using heuristic macroscopic arguments: one sum rule concerns the asymptotic form along the wall of the truncated two-body density; the other one concerns the dipole moment of the structure factor. In the two-dimensional case at βe2 = 2, we now have explicit expressions up to order \\hbar^2 for these two quantum densities; thus we can microscopically check the sum rules at this order. The checks are positive, reinforcing the idea that the sum rules are correct.

Non-Parabolic Hydrodynamic Formulations for the Simulation of Inhomogeneous Semiconductor Devices

NASA Technical Reports Server (NTRS)

Smith, A. W.; Brennan, K. F.

1996-01-01

Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models cannot fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations or the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship ((hk)(exp 2)/2m = W(1 + alphaW). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(exp y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships; parabolic, Kane dispersion and power law dispersion.

Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices

NASA Technical Reports Server (NTRS)

Smith, Arlynn W.; Brennan, Kevin F.

1995-01-01

Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models can not fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations of the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship (hk)(exp 2)/2m = W(1 + alpha(W)). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(sup y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships: parabolic, Kane dispersion, and power low dispersion.

Ion Trap Quantum Computing

DTIC Science & Technology

2011-12-01

quantum computer architecture schemes, but there are several problems that will be discussed later. 15 IV. ION TRAPS Wolfgang Paul was the first...famous physics experiment [62]. Wolfgang Paul demonstrated a similar apparatus during his Nobel Prize speech [63]. This device is hyperbolic-parabolic...Although it does not apply to linear traps, it is useful to understand the interaction between the Coulomb force and the repulsive quantum-mechanical Pauli

Quantum-well states in thin Ag films grown on the Ga/Si(111)-√{3 }×√{3 } surface

NASA Astrophysics Data System (ADS)

Starfelt, S.; Zhang, H. M.; Johansson, L. S. O.

2018-05-01

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-√{3 }×√{3 } surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag s p valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umklapp mediated QWSs around the M ¯ points of the Si(111) 1 ×1 surface Brillouin zone. The study confirms that the Ga/Si(111)-√{3 }×√{3 } surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

Stimulated emission in quantum well laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.

1989-07-03

We observe that stimulated emission from inhomogeneously pumped quantum well laser diodes is shifted down in energy compared with the subband transition energy. Measured spontaneous emission spectra show that this stimulated emission is due to band-to-band transitions shifted by renormalization at high injected carrier densities, and we suggest that this same mechanism explains reported observations of stimulated emission from inhomogeneously photopumped structures which previously have been interpreted as evidence for longitudinal optic (LO) phonon participation. We show that LO phonon participation cannot account for the photon energy of stimulated emission from conventional homogeneously pumped quantum well laser diodes.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Quantum Well Infrared Photodetectors (QWIP)

NASA Technical Reports Server (NTRS)

Levine, B. F.

1990-01-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Quantum Well Infrared Photodetectors (QWIP)

NASA Astrophysics Data System (ADS)

Levine, B. F.

1990-07-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Quantum gravitational collapse as a Dirac particle on the half line

NASA Astrophysics Data System (ADS)

Hassan, Syed Moeez; Husain, Viqar; Ziprick, Jonathan

2018-05-01

We show that the quantum dynamics of a thin spherical shell in general relativity is equivalent to the Coulomb-Dirac equation on the half line. The Hamiltonian has a one-parameter family of self-adjoint extensions with a discrete energy spectrum |E |m , where m is the rest mass of the shell and E is the Arnowitt-Deser-Misner mass. For sufficiently large m , the ground state energy level is negative. This suggests that classical positivity of energy does not survive quantization. The scattering states provide a realization of singularity avoidance. We speculate on the consequences of these results for black hole radiation.

Dual-band quantum well infrared photodetector with metallic structure

NASA Astrophysics Data System (ADS)

Wu, Yang; Liu, Hongmei; Li, Pingzhou

2018-02-01

The quantum efficiency of the dual bands quantum well infrared photodetectors(QWIP) has been widely concerned in recent years. A novel structure for the dual-band quantum well infrared detectors which is based on GaAs/AlGaAs designed in this paper is aimed to improve the absorption efficiency. The structure replaces the conventional grating with a metallic grating based on surface plasmon polaritons(SPPS), and we further insert a metal structure in the periodic quantum well layer. The simulation result shows that the use of the different shapes of the metal holes can remarkably improve the optical coupling efficiency due to the surface plasmon effect. By optimizing parameters of the structure, it can work in the dual infrared bands of 3-5um and 8-12um. Moreover, the absorption rate increased by 20% compared with traditional structure of Dual-band QWIP.

Uniqueness of complete maximal hypersurfaces in spatially parabolic generalized Robertson-Walker spacetimes

NASA Astrophysics Data System (ADS)

Romero, Alfonso; Rubio, Rafael M.; Salamanca, Juan J.

2013-06-01

A new technique for the study of noncompact complete spacelike hypersurfaces in generalized Robertson-Walker (GRW) spacetimes whose fiber is a parabolic Riemannian manifold is introduced. This class of spacetimes allows us to model open universes which extend to spacelike closed GRW spacetimes from the viewpoint of the geometric analysis of the fiber, and which, unlike those spacetimes, could be compatible with the holographic principle. First, under reasonable assumptions on the restriction of the warping function to the spacelike hypersurface and on the hyperbolic angle between the unit normal vector field and a certain timelike vector field, a complete spacelike hypersurface in a spatially parabolic GRW spacetime is shown to be parabolic, and the existence of a simply connected parabolic spacelike hypersurface in a GRW spacetime also leads to the parabolicity of its fiber. Then, all the complete maximal hypersurfaces in spatially parabolic GRW spacetimes are determined in several cases, extending, in particular, to this family of open cosmological models several well-known uniqueness results for the case of spatially closed GRW spacetimes. Moreover, new Calabi-Bernstein problems are solved.

The quantum Zeno effect in double well tunnelling

NASA Astrophysics Data System (ADS)

Lerner, L.

2018-05-01

Measurement lies at the heart of quantum theory, and introductory textbooks in quantum mechanics cover the measurement problem in topics such as the Schrödinger’s cat thought experiment, the EPR problem, and the quantum Zeno effect (QZE). In this article we present a new treatment of the QZE suitable for undergraduate students, for the case of a particle tunnelling between two wells while being observed in one of the wells. The analysis shows that as the observation rate increases, the tunnelling rate tends towards zero, in accordance with Zeno’s maxim ‘a watched pot never boils’. The method relies on decoherence theory, which replaces aspects of quantum collapse by the Schrödinger evolution of an open system, and its recently simplified treatment for undergraduates. Our presentation uses concepts familiar to undergraduate students, so that calculations involving many-body theory and the formal properties of the density matrix are avoided.

Quantum superposition at the half-metre scale.

PubMed

Kovachy, T; Asenbaum, P; Overstreet, C; Donnelly, C A; Dickerson, S M; Sugarbaker, A; Hogan, J M; Kasevich, M A

2015-12-24

The quantum superposition principle allows massive particles to be delocalized over distant positions. Though quantum mechanics has proved adept at describing the microscopic world, quantum superposition runs counter to intuitive conceptions of reality and locality when extended to the macroscopic scale, as exemplified by the thought experiment of Schrödinger's cat. Matter-wave interferometers, which split and recombine wave packets in order to observe interference, provide a way to probe the superposition principle on macroscopic scales and explore the transition to classical physics. In such experiments, large wave-packet separation is impeded by the need for long interaction times and large momentum beam splitters, which cause susceptibility to dephasing and decoherence. Here we use light-pulse atom interferometry to realize quantum interference with wave packets separated by up to 54 centimetres on a timescale of 1 second. These results push quantum superposition into a new macroscopic regime, demonstrating that quantum superposition remains possible at the distances and timescales of everyday life. The sub-nanokelvin temperatures of the atoms and a compensation of transverse optical forces enable a large separation while maintaining an interference contrast of 28 per cent. In addition to testing the superposition principle in a new regime, large quantum superposition states are vital to exploring gravity with atom interferometers in greater detail. We anticipate that these states could be used to increase sensitivity in tests of the equivalence principle, measure the gravitational Aharonov-Bohm effect, and eventually detect gravitational waves and phase shifts associated with general relativity.

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, S.; Citrin, D.; Saini, Subhash (Technical Monitor)

1998-01-01

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints

Capture and Emission of Charge Carriers by Quantum Well

NASA Astrophysics Data System (ADS)

Davydov, V. N.; Karankevich, O. A.

2018-06-01

The interaction of electrons from the conduction band of the barrier layer of a LED heterostructure with the quantum well size-quantization level described by the capture time and emission time of charge carriers is considered. Relaxation of an excess energy upon capture and emission of charge carriers occurs as a result of their collisions with phonons of the quantum well substance and the "barrier layer-quantum well" interface. Analytical expressions are obtained for the interaction times, taking into account the depth of the sizequantization level, involved in the interaction with electrons, and the width of the well. Numerical estimates show that in real conditions, the capture time is shorter than the emission time, and this difference increases with increasing depth of the level. At shallow depths, the capture and emission times are comparable.

Vortex and half-vortex dynamics in a nonlinear spinor quantum fluid

PubMed Central

Dominici, Lorenzo; Dagvadorj, Galbadrakh; Fellows, Jonathan M.; Ballarini, Dario; De Giorgi, Milena; Marchetti, Francesca M.; Piccirillo, Bruno; Marrucci, Lorenzo; Bramati, Alberto; Gigli, Giuseppe; Szymańska, Marzena H.; Sanvitto, Daniele

2015-01-01

Vortices are archetypal objects that recur in the universe across the scale of complexity, from subatomic particles to galaxies and black holes. Their appearance is connected with spontaneous symmetry breaking and phase transitions. In Bose-Einstein condensates and superfluids, vortices are both point-like and quantized quasiparticles. We use a two-dimensional (2D) fluid of polaritons, bosonic particles constituted by hybrid photonic and electronic oscillations, to study quantum vortex dynamics. Polaritons benefit from easiness of wave function phase detection, a spinor nature sustaining half-integer vorticity, strong nonlinearity, and tuning of the background disorder. We can directly generate by resonant pulsed excitations a polariton condensate carrying either a full or half-integer vortex as initial condition and follow their coherent evolution using ultrafast imaging on the picosecond scale. The observations highlight a rich phenomenology, such as the spiraling of the half-vortex and the joint path of the twin charges of a full vortex, until the moment of their splitting. Furthermore, we observe the ordered branching into newly generated secondary couples, associated with the breaking of radial and azimuthal symmetries. This allows us to devise the interplay of nonlinearity and sample disorder in shaping the fluid and driving the vortex dynamics. In addition, our observations suggest that phase singularities may be seen as fundamental particles whose quantized events span from pair creation and recombination to 2D+t topological vortex strings. PMID:26665174

Vortex and half-vortex dynamics in a nonlinear spinor quantum fluid.

PubMed

Dominici, Lorenzo; Dagvadorj, Galbadrakh; Fellows, Jonathan M; Ballarini, Dario; De Giorgi, Milena; Marchetti, Francesca M; Piccirillo, Bruno; Marrucci, Lorenzo; Bramati, Alberto; Gigli, Giuseppe; Szymańska, Marzena H; Sanvitto, Daniele

2015-12-01

Vortices are archetypal objects that recur in the universe across the scale of complexity, from subatomic particles to galaxies and black holes. Their appearance is connected with spontaneous symmetry breaking and phase transitions. In Bose-Einstein condensates and superfluids, vortices are both point-like and quantized quasiparticles. We use a two-dimensional (2D) fluid of polaritons, bosonic particles constituted by hybrid photonic and electronic oscillations, to study quantum vortex dynamics. Polaritons benefit from easiness of wave function phase detection, a spinor nature sustaining half-integer vorticity, strong nonlinearity, and tuning of the background disorder. We can directly generate by resonant pulsed excitations a polariton condensate carrying either a full or half-integer vortex as initial condition and follow their coherent evolution using ultrafast imaging on the picosecond scale. The observations highlight a rich phenomenology, such as the spiraling of the half-vortex and the joint path of the twin charges of a full vortex, until the moment of their splitting. Furthermore, we observe the ordered branching into newly generated secondary couples, associated with the breaking of radial and azimuthal symmetries. This allows us to devise the interplay of nonlinearity and sample disorder in shaping the fluid and driving the vortex dynamics. In addition, our observations suggest that phase singularities may be seen as fundamental particles whose quantized events span from pair creation and recombination to 2D+t topological vortex strings.

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

NASA Technical Reports Server (NTRS)

Levine, B. F.; Zussman, A.; Gunapala, S. D.; Asom, M. T.; Kuo, J. M.; Hobson, W. S.

1992-01-01

We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasi-continuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path; net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.

Second and third harmonic generation associated to infrared transitions in a Morse quantum well under applied electric and magnetic fields

NASA Astrophysics Data System (ADS)

Restrepo, R. L.; Kasapoglu, E.; Sakiroglu, S.; Ungan, F.; Morales, A. L.; Duque, C. A.

2017-09-01

The effects of electric and magnetic fields on the second and third harmonic generation coefficients in a Morse potential quantum well are theoretically studied. The energy levels and corresponding wave functions are obtained by solving the Schrödinger equation for the electron in the parabolic band scheme and effective mass approximations and the envelope function approach. The results show that both the electric and the magnetic fields have significant influence on the magnitudes and resonant peak energy positions of the second and third harmonic generation responses. In general, the Morse potential profile becomes wider and shallower as γ -parameter increases and so the energies of the bound states will be functions of this parameter. Therefore, we can conclude that the effects of the electric and magnetic fields can be used to tune and control the optical properties of interest in the range of the infrared electromagnetic spectrum.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1−xAs quantum well structures

PubMed Central

2012-01-01

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1−xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes’ third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature. PMID:23146126

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1- x As quantum well structures

NASA Astrophysics Data System (ADS)

Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M.; Ergun, Yuksel

2012-11-01

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga1- x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Coupling between graphene and intersubband collective excitations in quantum wells

NASA Astrophysics Data System (ADS)

Gonzalez de la Cruz, G.

2017-08-01

Recently, strong light-matter coupling between the electromagnetic modes in plasmonic metasurfaces with quantum-engineering electronic intersubband transitions in quantum wells has been demonstrated experimentally (Benz et al., [14], Lee et al., [15]). These novel materials combining different two-dimensional electronic systems offer new opportunities for tunable optical devices and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, our aim is to study the plasmon spectra of a hybrid structure consisting of conventional two-dimensional electron gas (2DEG) in a semiconductor quantum well and a graphene sheet with an interlayer separation of a. This electronic bilayer structure is immersed in a nonhomgeneous dielectric background of the system. We use a simple model in which the graphene surface plasmons and both; the intrasubband and intersubband collective electron excitations in the quantum well are coupled via screened Coulomb interaction. Here we calculate the dispersion of these relativistic/nonrelativistic new plasmon modes taking into account the thickness of the quantum well providing analytical expressions in the long-wavelength limit.

Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Chari, Rama

2014-08-18

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitationmore » fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.« less

Spatially indirect excitons in coupled quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Chih-Wei Eddy

2004-03-01

Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunitiesmore » for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer) 2 were

Photo-induced intersubband absorption in {Si}/{SiGe} quantum wells

NASA Astrophysics Data System (ADS)

Boucaud, P.; Gao, L.; Visocekas, F.; Moussa, Z.; Lourtioz, J.-M.; Julien, F. H.; Sagnes, I.; Campidelli, Y.; Badoz, P.-A.; Vagos, P.

1995-12-01

We have investigated photo-induced intersubband absorption in the valence band of {Si}/{SiGe} quantum wells. Carriers are optically generated in the quantum wells using an argon ion laser. The resulting infrared absorption is probed with a step-scan Fourier transform infrared spectrometer. The photo-induced infrared absorption in SiGe quantum wells is dominated by two contributions: the free carrier absorption, which is similar to bulk absorption in a uniformly doped SiGe layer, and the valence subband absorption in the quantum wells. Both p- and s-polarized intersubband absorptions are measured. We have observed that the photo-induced intersubband absorption in doped samples is shifted to lower energy as compared to direct intersubband absorption. This absorption process is attributed to carriers away from the Brillouin zone center. We show that the photo-induced technique is appropriate to study valence band mixing effects and their influence on intersubband absorption.

Investigation of temperature-dependent photoluminescence in multi-quantum wells.

PubMed

Fang, Yutao; Wang, Lu; Sun, Qingling; Lu, Taiping; Deng, Zhen; Ma, Ziguang; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Chen, Hong

2015-07-31

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.

A real-time spectrum acquisition system design based on quantum dots-quantum well detector

NASA Astrophysics Data System (ADS)

Zhang, S. H.; Guo, F. M.

2016-01-01

In this paper, we studied the structure characteristics of quantum dots-quantum well photodetector with response wavelength range from 400 nm to 1000 nm. It has the characteristics of high sensitivity, low dark current and the high conductance gain. According to the properties of the quantum dots-quantum well photodetectors, we designed a new type of capacitive transimpedence amplifier (CTIA) readout circuit structure with the advantages of adjustable gain, wide bandwidth and high driving ability. We have implemented the chip packaging between CTIA-CDS structure readout circuit and quantum dots detector and tested the readout response characteristics. According to the timing signals requirements of our readout circuit, we designed a real-time spectral data acquisition system based on FPGA and ARM. Parallel processing mode of programmable devices makes the system has high sensitivity and high transmission rate. In addition, we realized blind pixel compensation and smoothing filter algorithm processing to the real time spectrum data by using C++. Through the fluorescence spectrum measurement of carbon quantum dots and the signal acquisition system and computer software system to realize the collection of the spectrum signal processing and analysis, we verified the excellent characteristics of detector. It meets the design requirements of quantum dot spectrum acquisition system with the characteristics of short integration time, real-time and portability.

Two-Color Photodetector Using an Asymmetric Quantum Well Structure

DTIC Science & Technology

2002-06-01

Infrared Photodetectors ( QWIPs ). QWIPs have an advantage over other infrared detectors such as Mercury Cadmium Telluride (MCT) because they have...an asymmetric quantum well structure in which all energy transitions are possible. The QWIP structure in this thesis was designed to detect a laser...systems. 15. NUMBER OF PAGES 89 14. SUBJECT TERMS Quantum well, QWIP , Two-color detection, Infrared imager, Laser Spot Tracker, Transfer

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

PubMed

Walther, T; Krysa, A B

2017-12-01

Quantum cascade lasers can be efficient infrared radiation sources and consist of several hundreds of very thin layers arranged in stacks that are repeated periodically. Both the thicknesses of the individual layers as well as the period lengths need to be monitored to high precision. Different transmission electron microscopy methods have been combined to analyse AlGaAs/GaAs quantum cascade laser structures in cross-section. We found a small parabolic variation of the growth rate during deposition, affecting the stack periodicity and a reduced aluminium content of the AlGaAs barriers, whereas their widths as well as those of the GaAs quantum wells agreed with the nominal values within one atomic layer. Growth on an offcut substrate led to facets and steps at the interfaces. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Spectroscopy of Single Free Standing Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, M D; Hollars, C W; Huser, T

2006-03-14

We investigated the interaction of quantum confined exciton states GaAs quantum wells with native surface states. Single molecule photoluminescence (PL) spectroscopy, developed by T. Huser at LLNL was used to probe the unique bare quantum wells in the free standing quantum well structure. The latter was developed by the M. D. Williams at Clark Atlanta University. The goals of the project during this budget cycle were to procure samples containing GaAs free standing QWs, identify suitable regions for PL analysis at Lawrence Livermore, analyze the structures at room temperature and at liquid nitrogen temperatures. The specific regions of interest onmore » the sample structures were identified by scanning electron microscopy at Clark Atlanta prior to transport to LLNL. Previous attempts at other facilities using NSOM, cathodoluminescence, and conventional PL showed little luminescence activity at room temperature from the 200 {angstrom} thick wells. This suggested either excess recombination due to surface states in the quantum well region or insufficient absorption length for photoluminescence. The literature suggested that the effect of the defects could be eliminated by reducing the sample temperature below their associated activation energies. In our previous subcontract work with LLNL, a significant amount of effort was expended to modify the apparatus to allow low temperature measurements. The modifications were not successful and we concluded that in order to do the measurements at low temperature we would need to purchase a commercial optical cryostat to get reliable results. Ms. Rochelle Bryant worked during the summer as an intern at LLNL on the project under the supervision of C. Hollars and in collaboration with T. Huser and found that PL emission could be obtained at room temperature. This was a surprising result as the literature and our experience shows that there is no PL emission from GaAs at room temperature. We speculate that this is due to the

Critical spaces for quasilinear parabolic evolution equations and applications

NASA Astrophysics Data System (ADS)

Prüss, Jan; Simonett, Gieri; Wilke, Mathias

2018-02-01

We present a comprehensive theory of critical spaces for the broad class of quasilinear parabolic evolution equations. The approach is based on maximal Lp-regularity in time-weighted function spaces. It is shown that our notion of critical spaces coincides with the concept of scaling invariant spaces in case that the underlying partial differential equation enjoys a scaling invariance. Applications to the vorticity equations for the Navier-Stokes problem, convection-diffusion equations, the Nernst-Planck-Poisson equations in electro-chemistry, chemotaxis equations, the MHD equations, and some other well-known parabolic equations are given.

Enhanced Hole Mobility and Density in GaSb Quantum Wells

DTIC Science & Technology

2013-01-01

Keywords: Molecular beam epitaxy Quantum wells Semiconducting III–V materials Field-effect transistors GaSb a b s t r a c t Modulation-doped quantum wells...QWs) of GaSb clad by AlAsSb were grown by molecular beam epitaxy on InP substrates. By virtue of quantum confinement and compressive strain of the...heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using a Riber Compact 21T MBE system. A cross

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

Intense laser field effects on a Woods-Saxon potential quantum well

NASA Astrophysics Data System (ADS)

Restrepo, R. L.; Morales, A. L.; Akimov, V.; Tulupenko, V.; Kasapoglu, E.; Ungan, F.; Duque, C. A.

2015-11-01

This paper presents the results of the theoretical study of the effects of non-resonant intense laser field and electric and magnetic fields on the optical properties in an quantum well (QW) make with Woods-Saxon potential profile. The electric field and intense laser field are applied along the growth direction of the Woods-Saxon quantum well and the magnetic field is oriented perpendicularly. To calculate the energy and the wave functions of the electron in the Woods-Saxon quantum well, the effective mass approximation and the method of envelope wave function are used. The confinement in the Woods-Saxon quantum well is changed drastically by the application of intense laser field or either the effect of electric and magnetic fields. The optical properties are calculated using the compact density matrix.

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

PubMed Central

Chen, Jianyi; Li, Dongdong

2018-01-01

The advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Density functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width. PMID:29740600

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Wu; Zhang, Yu -Yang; Chen, Jianyi

Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Densitymore » functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.« less

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

DOE PAGES

Zhou, Wu; Zhang, Yu -Yang; Chen, Jianyi; ...

2018-03-23

Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Densitymore » functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.« less

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

GaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

Hidden edge Dirac point and robust quantum edge transport in InAs/GaSb quantum wells

NASA Astrophysics Data System (ADS)

Li, Chang-An; Zhang, Song-Bo; Shen, Shun-Qing

2018-01-01

The robustness of quantum edge transport in InAs/GaSb quantum wells in the presence of magnetic fields raises an issue on the fate of topological phases of matter under time-reversal symmetry breaking. A peculiar band structure evolution in InAs/GaSb quantum wells is revealed: the electron subbands cross the heavy hole subbands but anticross the light hole subbands. The topologically protected band crossing point (Dirac point) of the helical edge states is pulled to be close to and even buried in the bulk valence bands when the system is in a deeply inverted regime, which is attributed to the existence of the light hole subbands. A sizable Zeeman energy gap verified by the effective g factors of edge states opens at the Dirac point by an in-plane or perpendicular magnetic field; however, it can also be hidden in the bulk valance bands. This provides a plausible explanation for the recent observation on the robustness of quantum edge transport in InAs/GaSb quantum wells subjected to strong magnetic fields.

Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

Composite isogrid structures for parabolic surfaces

NASA Technical Reports Server (NTRS)

Silverman, Edward M. (Inventor); Boyd, Jr., William E. (Inventor); Rhodes, Marvin D. (Inventor); Dyer, Jack E. (Inventor)

2000-01-01

The invention relates to high stiffness parabolic structures utilizing integral reinforced grids. The parabolic structures implement the use of isogrid structures which incorporate unique and efficient orthotropic patterns for efficient stiffness and structural stability.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum

Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D. (Inventor); Bandara, Sumith V. (Inventor); Liu, John K. (Inventor)

2006-01-01

Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling.

PubMed

Wang, Z H; Zheng, Q; Wang, Xiaoguang; Li, Yong

2016-03-02

We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.

The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling

NASA Astrophysics Data System (ADS)

Wang, Z. H.; Zheng, Q.; Wang, Xiaoguang; Li, Yong

2016-03-01

We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.

Quantum Well and Quantum Dot Modeling for Advanced Infrared Detectors and Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Ting, David; Gunapala, S. D.; Bandara, S. V.; Hill, C. J.

2006-01-01

This viewgraph presentation reviews the modeling of Quantum Well Infrared Detectors (QWIP) and Quantum Dot Infrared Detectors (QDIP) in the development of Focal Plane Arrays (FPA). The QWIP Detector being developed is a dual band detector. It is capable of running on two bands Long-Wave Infrared (LWIR) and Medium Wavelength Infrared (MWIR). The same large-format dual-band FPA technology can be applied to Quantum Dot Infrared Photodetector (QDIP) with no modification, once QDIP exceeds QWIP in single device performance. Details of the devices are reviewed.

[Optical and electrical properties of NPB/Alq3 organic quantum well].

PubMed

Huang, Jin-Zhao; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Wang, Yong

2007-04-01

In the present paper, the organic quantum-well device similar to the type-II quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB (N, N'-di-[(1-naphthalenyl)-N, N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine) and Alq3 (Tris-(8-quinolinolato) aluminum) act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Forster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

NASA Astrophysics Data System (ADS)

Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla

2018-02-01

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Absalan, H; SalmanOgli, A; Rostami, R

The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event ormore » a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)« less

Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

ERIC Educational Resources Information Center

Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

2009-01-01

In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

Quantum-well-base heterojunction bipolar light-emitting transistor

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Chan, R.

2004-03-01

This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In1-xGaxAs (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ("traps") are imbedded in the 300 Å GaAs base layer, thus improving (as a "collector" and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated.

Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure

NASA Astrophysics Data System (ADS)

Peng, Ruizhi; Chunfuzhang; Han, Genquan; Hao, Yue

2017-06-01

This paper presents modeling and simulation of a multiple quantum well structure formed with Ge0.95Sn0.05 quantum wells separated by Ge0.51Si0.35Sn0.14 barriers for the applications. These alloy compositions are chosen to satisfy two conditions simultaneously: type-I band alignment between Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 and a lattice match between wells and barriers. This lattice match ensures that the strain-free structure can be grown upon a relaxed Ge0.51Si0.35Sn0.14 buffer on a silicon substrate - a CMOS compatible process. A electro-absorption modulator with the Ge0.95Sn0.05/Ge0.51Si0.35Sn0.14 multiple quantum well structure based on quantum-confined Stark effect(QCSE) is demonstrated in theory. The energy band diagrams of the GeSiSn/GeSn multi-quantum-well structure at 0 and 0.5V bias are calculated, respectively. And the corresponding absorption coefficients as a function of cut-off energy for this multiple quantum well structure at 0 and 0.5Vbias are also obtained, respectively. The reduction of cut-off energy is observed with the applying of the external electric field, indicating a strong QCSE in the structure.

Gallium arsenide quantum well-based far infrared array radiometric imager

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Jhabvala, Murzy D.

1991-01-01

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling

PubMed Central

Wang, Z. H.; Zheng, Q.; Wang, Xiaoguang; Li, Yong

2016-01-01

We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given. PMID:26931762

Spectrum Tunable Quantum Dot-In-A-Well Infrared Detector Arrays for Thermal Imaging

DTIC Science & Technology

2008-09-01

Spectrum tunable quantum dot-in-a- well infrared detector arrays for thermal imaging Jonathan R. Andrews1, Sergio R. Restaino1, Scott W. Teare2...Materials at the University of New Mexico has been investigating quantum dot and quantum well detectors for thermal infrared imaging applications...SEP 2008 2. REPORT TYPE 3. DATES COVERED 00-00-2008 to 00-00-2008 4. TITLE AND SUBTITLE Spectrum tunable quantum dot-in-a- well infrared

On the coupling of hyperbolic and parabolic systems: Analytical and numerical approach

NASA Technical Reports Server (NTRS)

Gastaldi, Fabio; Quarteroni, Alfio

1988-01-01

The coupling of hyperbolic and parabolic systems is discussed in a domain Omega divided into two distinct subdomains omega(+) and omega(-). The main concern is to find the proper interface conditions to be fulfilled at the surface separating the two domains. Next, they are used in the numerical approximation of the problem. The justification of the interface conditions is based on a singular perturbation analysis, i.e., the hyperbolic system is rendered parabolic by adding a small artifical viscosity. As this goes to zero, the coupled parabolic-parabolic problem degenerates into the original one, yielding some conditions at the interface. These are taken as interface conditions for the hyperbolic-parabolic problem. Actually, two alternative sets of interface conditions are discussed according to whether the regularization procedure is variational or nonvariational. It is shown how these conditions can be used in the frame of a numerical approximation to the given problem. Furthermore, a method of resolution is discussed which alternates the resolution of the hyperbolic problem within omega(-) and of the parabolic one within omega(+). The spectral collocation method is proposed, as an example of space discretization (different methods could be used as well); both explicit and implicit time-advancing schemes are considered. The present study is a preliminary step toward the analysis of the coupling between Euler and Navier-Stokes equations for compressible flows.

Quantum beats in conductance oscillations in graphene-based asymmetric double velocity wells and electrostatic wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lei; Department of Medical Physics, Basic Medical College, Hebei Medical University, Shijiazhuang, Hebei 050017; Li, Yu-Xian

2014-01-14

The transport properties in graphene-based asymmetric double velocity well (Fermi velocity inside the well less than that outside the well) and electrostatic well structures are investigated using the transfer matrix method. The results show that quantum beats occur in the oscillations of the conductance for asymmetric double velocity wells. The beating effect can also be found in asymmetric double electrostatic wells, but only if the widths of the two wells are different. The beat frequency for the asymmetric double well is exactly equal to the frequency difference between the oscillation rates in two isolated single wells with the same structuresmore » as the individual wells in the double well structure. A qualitative interpretation is proposed based on the fact that the resonant levels depend upon the sizes of the quantum wells. The beating behavior can provide a new way to identify the symmetry of double well structures.« less

Phononic properties of superlattices and multi quantum well heterostructures (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wagner, Markus R.; Reparaz, Juan Sebastian; Callsen, Gordon; Nippert, Felix; Kure, Thomas; Hoffmann, Axel; Hugues, Maxime; Teysseire, Monique; Damilano, Benjamin; Chauveau, Jean-Michel

2017-03-01

We address the electronic, phononic, and thermal properties of oxide based superlattices and multi quantum well heterostructures. In the first part, we review the present understanding of phonon coupling and phonon propagation in superlattices and elucidate current research aspects of phonon coherence in these structure. Subsequently, we focus on the experimental study of MBE grown ZnO/ZnMgO multi quantum well heterostructures with varying Mg content, barrier thickness, quantum well thickness, and number of periods. In particular, we discuss how the controlled variation of these parameters affect the phonon dispersion relation and phonon propagation and their impact on the thermal properties.

Separability and dynamical symmetry of Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, P.-M., E-mail: zhpm@impcas.ac.cn; Zou, L.-P., E-mail: zoulp@impcas.ac.cn; Horvathy, P.A., E-mail: horvathy@lmpt.univ-tours.fr

2014-02-15

The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived frommore » that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.« less

AlGaAs-GaAs quantum-well lasers for direct solar photopumping

NASA Technical Reports Server (NTRS)

Unnikrishnan, Sreenath; Anderson, Neal G.

1991-01-01

The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

Recent Developments in Quantum-Well Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, S. D.; Bandara, K. M. S. V.

1995-01-01

Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.

Femtosecond parabolic pulse shaping in normally dispersive optical fibers.

PubMed

Sukhoivanov, Igor A; Iakushev, Sergii O; Shulika, Oleksiy V; Díez, Antonio; Andrés, Miguel

2013-07-29

Formation of parabolic pulses at femtosecond time scale by means of passive nonlinear reshaping in normally dispersive optical fibers is analyzed. Two approaches are examined and compared: the parabolic waveform formation in transient propagation regime and parabolic waveform formation in the steady-state propagation regime. It is found that both approaches could produce parabolic pulses as short as few hundred femtoseconds applying commercially available fibers, specially designed all-normal dispersion photonic crystal fiber and modern femtosecond lasers for pumping. The ranges of parameters providing parabolic pulse formation at the femtosecond time scale are found depending on the initial pulse duration, chirp and energy. Applicability of different fibers for femtosecond pulse shaping is analyzed. Recommendation for shortest parabolic pulse formation is made based on the analysis presented.

Explicit Nonlinear Finite Element Geometric Analysis of Parabolic Leaf Springs under Various Loads

PubMed Central

Kong, Y. S.; Omar, M. Z.; Chua, L. B.; Abdullah, S.

2013-01-01

This study describes the effects of bounce, brake, and roll behavior of a bus toward its leaf spring suspension systems. Parabolic leaf springs are designed based on vertical deflection and stress; however, loads are practically derived from various modes especially under harsh road drives or emergency braking. Parabolic leaf springs must sustain these loads without failing to ensure bus and passenger safety. In this study, the explicit nonlinear dynamic finite element (FE) method is implemented because of the complexity of experimental testing A series of load cases; namely, vertical push, wind-up, and suspension roll are introduced for the simulations. The vertical stiffness of the parabolic leaf springs is related to the vehicle load-carrying capability, whereas the wind-up stiffness is associated with vehicle braking. The roll stiffness of the parabolic leaf springs is correlated with the vehicle roll stability. To obtain a better bus performance, two new parabolic leaf spring designs are proposed and simulated. The stress level during the loadings is observed and compared with its design limit. Results indicate that the newly designed high vertical stiffness parabolic spring provides the bus a greater roll stability and a lower stress value compared with the original design. Bus safety and stability is promoted, as well as the load carrying capability. PMID:24298209

Explicit nonlinear finite element geometric analysis of parabolic leaf springs under various loads.

PubMed

Kong, Y S; Omar, M Z; Chua, L B; Abdullah, S

2013-01-01

This study describes the effects of bounce, brake, and roll behavior of a bus toward its leaf spring suspension systems. Parabolic leaf springs are designed based on vertical deflection and stress; however, loads are practically derived from various modes especially under harsh road drives or emergency braking. Parabolic leaf springs must sustain these loads without failing to ensure bus and passenger safety. In this study, the explicit nonlinear dynamic finite element (FE) method is implemented because of the complexity of experimental testing A series of load cases; namely, vertical push, wind-up, and suspension roll are introduced for the simulations. The vertical stiffness of the parabolic leaf springs is related to the vehicle load-carrying capability, whereas the wind-up stiffness is associated with vehicle braking. The roll stiffness of the parabolic leaf springs is correlated with the vehicle roll stability. To obtain a better bus performance, two new parabolic leaf spring designs are proposed and simulated. The stress level during the loadings is observed and compared with its design limit. Results indicate that the newly designed high vertical stiffness parabolic spring provides the bus a greater roll stability and a lower stress value compared with the original design. Bus safety and stability is promoted, as well as the load carrying capability.

Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells

PubMed

Kuznetsov; Mendez; Zuo; Snider; Croke

2000-07-10

We have observed shot noise in the hopping conduction of two-dimensional carriers confined in a p-type SiGe quantum well at a temperature of 4 K. Moreover, shot noise is suppressed relative to its "classical" value 2eI by an amount that depends on the length of the sample and the carrier density. We have found a suppression factor to the classical value of about one-half for a 2 &mgr;m long sample, and of one-fifth for a 5 &mgr;m sample. In each case, the factor decreased slightly as the density increased toward the insulator-metal transition. We explain these results in terms of the characteristic length ( approximately 1 &mgr;m in our case) of the inherent inhomogeneity of hopping transport, obtained from percolation theory.

Novel High Power Type-I Quantum Well Cascade Diode Lasers

DTIC Science & Technology

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Parabolic discounting of monetary rewards by physical effort.

PubMed

Hartmann, Matthias N; Hager, Oliver M; Tobler, Philippe N; Kaiser, Stefan

2013-11-01

When humans and other animals make decisions in their natural environments prospective rewards have to be weighed against costs. It is well established that increasing costs lead to devaluation or discounting of reward. While our knowledge about discount functions for time and probability costs is quite advanced, little is known about how physical effort discounts reward. In the present study we compared three different models in a binary choice task in which human participants had to squeeze a handgrip to earn monetary rewards: a linear, a hyperbolic, and a parabolic model. On the group as well as the individual level, the concave parabolic model explained most variance of the choice data, thus contrasting with the typical hyperbolic discounting of reward value by delay. Research on effort discounting is not only important to basic science but also holds the potential to quantify aberrant motivational states in neuropsychiatric disorders. Copyright © 2013 Elsevier B.V. All rights reserved.

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

2014-06-01

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Nematic fluctuations balancing the zoo of phases in half-filled quantum Hall systems

NASA Astrophysics Data System (ADS)

Mesaros, Andrej; Lawler, Michael J.; Kim, Eun-Ah

2017-03-01

Half-filled Landau levels form a zoo of strongly correlated phases. These include non-Fermi-liquids (NFLs), fractional quantum Hall (FQH) states, nematic phases, and FQH nematic phases. This diversity begs the following question: what keeps the balance between the seemingly unrelated phases? The answer is elusive because the Halperin-Lee-Read description that offers a natural departure point is inherently strongly coupled. However, the observed nematic phases suggest that nematic fluctuations play an important role. To study this possibility, we apply a recently formulated controlled double-expansion approach in large-N composite fermion flavors and small ɛ nonanalytic bosonic action to the case with both gauge and nematic boson fluctuations. In the vicinity of a nematic quantum critical line, we find that depending on the amount of screening of the gauge- and nematic-mediated interactions controlled by ɛ 's, the renormalization-group flow points to all four mentioned correlated phases. When pairing preempts the nematic phase, NFL behavior is possible at temperatures above the pairing transition. We conclude by discussing measurements at low tilt angles, which could reveal the stabilization of the FQH phase by nematic fluctuations.

Generalized description of few-electron quantum dots at zero and nonzero magnetic fields

NASA Astrophysics Data System (ADS)

Ciftja, Orion

2007-01-01

We introduce a generalized ground state variational wavefunction for parabolically confined two-dimensional quantum dots that equally applies to both cases of weak (or zero) and strong magnetic field. The wavefunction has a Laughlin-like form in the limit of infinite magnetic field, but transforms into a Jastrow-Slater wavefunction at zero magnetic field. At intermediate magnetic fields (where a fraction of electrons is spin-reversed) it resembles Halperin's spin-reversed wavefunction for the fractional quantum Hall effect. The properties of this variational wavefunction are illustrated for the case of two-dimensional quantum dot helium (a system of two interacting electrons in a parabolic confinement potential) where we find the description to be an excellent representation of the true ground state for the whole range of magnetic fields.

Electronic quantum confinement in cylindrical potential well

NASA Astrophysics Data System (ADS)

Baltenkov, Arkadiy S.; Msezane, Alfred Z.

2016-04-01

The effects of quantum confinement on the momentum distribution of electrons confined within a cylindrical potential well have been analyzed. The motivation is to understand specific features of the momentum distribution of electrons when the electron behavior is completely controlled by the parameters of a non-isotropic potential cavity. It is shown that studying the solutions of the wave equation for an electron confined in a cylindrical potential well offers the possibility to analyze the confinement behavior of an electron executing one- or two-dimensional motion in the three-dimensional space within the framework of the same mathematical model. Some low-lying electronic states with different symmetries have been considered and the corresponding wave functions have been calculated; the behavior of their nodes and their peak positions with respect to the parameters of the cylindrical well has been analyzed. Additionally, the momentum distributions of electrons in these states have been calculated. The limiting cases of the ratio of the cylinder length H and its radius R0 have been considered; when the cylinder length H significantly exceeds its radius R0 and when the cylinder radius is much greater than its length. The cylindrical quantum confinement effects on the momentum distribution of electrons in these potential wells have been analyzed. The possible application of the results obtained here for the description of the general features in the behavior of electrons in nanowires with metallic type of conductivity (or nanotubes) and ultrathin epitaxial films (or graphene sheets) are discussed. Possible experiments are suggested where the quantum confinement can be manifested. Contribution to the Topical Issue "Atomic Cluster Collisions (7th International Symposium)", edited by Gerardo Delgado Barrio, Andrey Solov'Yov, Pablo Villarreal, Rita Prosmiti.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

Silicon Germanium Quantum Well Thermoelectrics

NASA Astrophysics Data System (ADS)

Davidson, Anthony Lee, III

Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a

Picosecond Acoustics in Single Quantum Wells of Cubic GaN /(Al ,Ga )N

NASA Astrophysics Data System (ADS)

Czerniuk, T.; Ehrlich, T.; Wecker, T.; As, D. J.; Yakovlev, D. R.; Akimov, A. V.; Bayer, M.

2017-01-01

A picosecond acoustic pulse is used to study the photoelastic interaction in single zinc-blende GaN /AlxGa1 -x N quantum wells. We use an optical time-resolved pump-probe setup and demonstrate that tuning the photon energy to the quantum well's lowest electron-hole transition makes the experiment sensitive to the quantum well only. Because of the small width, its temporal and spatial resolution allows us to track the few-picosecond-long transit of the acoustic pulse. We further deploy a model to analyze the unknown photoelastic coupling strength of the quantum well for different photon energies and find good agreement with the experiments.

Solar parabolic dish technology evaluation report

NASA Technical Reports Server (NTRS)

Lucas, J. W.

1984-01-01

The activities of the JPL Solar Thermal Power Systems Parabolic Dish Project for FY 1983 are summarized. Included are discussions on designs of module development including concentrator, receiver, and power conversion subsystems together with a separate discussion of field tests, Small Community Experiment system development, and tests at the Parabolic Dish Test Site.

Parabolic trough solar collector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eaton, J.H.

1985-01-15

A parabolic trough solar collector using reflective flexible materials is disclosed. A parabolic cylinder mirror is formed by stretching a flexible reflecting material between two parabolic end formers. The formers are held in place by a spreader bar. The resulting mirror is made to track the sun, focusing the sun's rays on a receiver tube. The ends of the reflective material are attached by glue or other suitable means to attachment straps. The flexible mirror is then attached to the formers. The attachment straps are mounted in brackets and tensioned by tightening associated nuts on the ends of the attachmentmore » straps. This serves both to stretch the flexible material orthogonal to the receiver tube and to hold the flexible material on the formers. The flexible mirror is stretched in the direction of the receiver tube by adjusting tensioning nuts. If materials with matching coefficients of expansion for temperature and humidity have been chosen, for example, aluminum foil for the flexible mirror and aluminum for the spreader bar, the mirror will stay in adjustment through temperature and humidity excursions. With dissimilar materials, e.g., aluminized mylar or other polymeric material and steel, spacers can be replaced with springs to maintain proper adjustment. The spreader bar cross section is chosen to be in the optic shadow of the receiver tube when tracking and not to intercept rays of the sun that would otherwise reach the receiver tube. This invention can also be used to make non-parabolic mirrors for other apparatus and applications.« less

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

NASA Technical Reports Server (NTRS)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Evaluation and optimization of the optical performance of low-concentrating dielectric compound parabolic concentrator using ray-tracing methods.

PubMed

Sarmah, Nabin; Richards, Bryce S; Mallick, Tapas K

2011-07-01

We present a detailed design concept and optical performance evaluation of stationary dielectric asymmetric compound parabolic concentrators (DiACPCs) using ray-tracing methods. Three DiACPC designs, DiACPC-55, DiACPC-66, and DiACPC-77, of acceptance half-angles (0° and 55°), (0° and 66°), and (0° and 77°), respectively, are designed in order to optimize the concentrator for building façade photovoltaic applications in northern latitudes (>55 °N). The dielectric concentrator profiles have been realized via truncation of the complete compound parabolic concentrator profiles to achieve a geometric concentration ratio of 2.82. Ray-tracing simulation results show that all rays entering the designed concentrators within the acceptance half-angle range can be collected without escaping from the parabolic sides and aperture. The maximum optical efficiency of the designed concentrators is found to be 83%, which tends to decrease with the increase in incidence angle. The intensity is found to be distributed at the receiver (solar cell) area in an inhomogeneous pattern for a wide range of incident angles of direct solar irradiance with high-intensity peaks at certain points of the receiver. However, peaks become more intense for the irradiation incident close to the extreme acceptance angles, shifting the peaks to the edge of the receiver. Energy flux distribution at the receiver for diffuse radiation is found to be homogeneous within ±12% with an average intensity of 520 W/m².

Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iida, Daisuke; Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby; Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya

2015-09-15

We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

Terahertz Quantum Cascade Structures Using Step Wells And Longitudinal Optical-Phonon Scattering

DTIC Science & Technology

2009-06-01

emit many photons, which allows for differential quantum efficiencies greater than unity and hence higher power output. QCLs have been successfully...maintained. The step in the well allows for high injection efficiency due to the spatial separation of the wavefunctions. A step quantum well, in which at...III.D.34), the photon density is determined to be ( )thiphotonphoton IILeAn − Γ = ητ (III.D.35) where the internal quantum efficiency

Quantum mechanics on the h-deformed quantum plane

NASA Astrophysics Data System (ADS)

Cho, Sunggoo

1999-03-01

We find the covariant deformed Heisenberg algebra and the Laplace-Beltrami operator on the extended h-deformed quantum plane and solve the Schrödinger equations explicitly for some physical systems on the quantum plane. In the commutative limit the behaviour of a quantum particle on the quantum plane becomes that of the quantum particle on the Poincaré half-plane, a surface of constant negative Gaussian curvature. We show that the bound state energy spectra for particles under specific potentials depend explicitly on the deformation parameter h. Moreover, it is shown that bound states can survive on the quantum plane in a limiting case where bound states on the Poincaré half-plane disappear.

The Drag Coefficient of Parabolic Bodies of Revolution Operating at Zero Cavitation Number and Zero Angle of Yaw

NASA Technical Reports Server (NTRS)

Johnson, Virgil E., Jr.; Rasnick, Thomas A.

1961-01-01

The form-drag coefficient of parabolic bodies of revolution with fineness ratios greater than 1 operating at zero angle of yaw and zero cavitation number is determined both theoretically and experimentally. Agreement between theory and experiment is very good, The theoretical form-drag coefficient of paraboloids is about half the form-drag coefficient of cones of comparable fineness ratio.

Ultrashort electromagnetic pulse control of intersubband quantum well transitions

PubMed Central

2012-01-01

We study the creation of high-efficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. We numerically solve the effective nonlinear Bloch equations for a specific double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse areas. The dependence of the efficiency of population transfer on the electron sheet density and the carrier envelope phase of the pulse is also explored. For electromagnetic pulses with a duration of several cycles, we find that the change in the electron sheet density leads to a very different response of the population in the two subbands to pulse area. However, for pulses with a duration equal to or shorter than 3 cycles, we show that efficient population transfer between the two subbands is possible, independent of the value of electron sheet density, if the pulse area is Π. PMID:22916956

Ultrashort electromagnetic pulse control of intersubband quantum well transitions.

PubMed

Paspalakis, Emmanuel; Boviatsis, John

2012-08-23

: We study the creation of high-efficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. We numerically solve the effective nonlinear Bloch equations for a specific double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse areas. The dependence of the efficiency of population transfer on the electron sheet density and the carrier envelope phase of the pulse is also explored. For electromagnetic pulses with a duration of several cycles, we find that the change in the electron sheet density leads to a very different response of the population in the two subbands to pulse area. However, for pulses with a duration equal to or shorter than 3 cycles, we show that efficient population transfer between the two subbands is possible, independent of the value of electron sheet density, if the pulse area is Π.

Diamagnetic susceptibility of a hydrogenic donor in a group IV-VI quantum dot-quantum well heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanamoorthy, S. N.; Peter, A. John, E-mail: a.john.peter@gmail.com

2016-05-23

Electronic properties of a hydrogenic donor impurity in a CdSe/Pb{sub 0.8}Cd{sub 0.2}Se/CdSe quantum dot quantum well system are investigated for various radii of core with shell materials. Confined energies are obtained taking into account the geometrical size of the system and thereby the donor binding energies are found. The diamagnetic susceptibility is estimated for a confined shallow donor in the well system. The results show that the diamagnetic susceptibility strongly depends on core and shell radii and it is more sensitive to variations of the geometrical size of the well material.

Nonlinear electron transport mobility in asymmetric wide quantum well structure

NASA Astrophysics Data System (ADS)

Nayak, Rasmita K.; Das, Sudhakar; Panda, Ajit K.; Sahu, Trinath

2018-05-01

The nonlinearity of multisubband electron mobility µ in a GaAs/AlxGa1-xAs wide quantum well structure is studied by varying the well width w and doping concentration Nd b (Nd t ) lying in the bottom (top) barrier. The electrons diffuse into the well and accumulate near the interfaces forming two sheets of coupled two dimensional electron gases equivalent to a double quantum well structure. We show that interchange of doping concentrations N db and N dt lead to the enhancement of µ as a function of w as long as N dt > N db , even though the surface electron density remains unaltered. Further, keeping Nd b unchanged, variation of Nd t leads to nonlinearity in µ near the resonance of subband states at Nd t = Nd b at which the subband energy levels exhibit anticrossing. The variation of µ becomes prominent by increasing the well width and resonant doping concentration. The nonlinearity in µ is mostly because of the change in the interface roughness scattering potential through intersubband effects due to the substantial changes in the distributions of the subband wave functions around resonance. Our results of nonmonotonic variation of µ can be utilized for low temperature coupled quantum well devices.

Two-dimensional electron gas in monolayer InN quantum wells

DOE PAGES

Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

2014-11-24

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Photovoltaic applications of Compound Parabolic Concentrator (CPC)

NASA Technical Reports Server (NTRS)

Winston, R.

1975-01-01

The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.

Analysis of the Quality of Parabolic Flight

NASA Technical Reports Server (NTRS)

Lambot, Thomas; Ord, Stephan F.

2016-01-01

Parabolic flights allow researchers to conduct several 20 second micro-gravity experiments in the course of a single day. However, the measurement can have large variations over the course of a single parabola, requiring the knowledge of the actual flight environment as a function of time. The NASA Flight Opportunities program (FO) reviewed the acceleration data of over 400 parabolic flights and investigated the quality of micro-gravity for scientific purposes. It was discovered that a parabolic flight can be segmented into multiple parts of different quality and duration, a fact to be aware of when planning an experiment.

Nonlinear Structural Analysis Methodology and Dynamics Scaling of Inflatable Parabolic Reflector Antenna Concepts

NASA Technical Reports Server (NTRS)

Sreekantamurthy, Tham; Gaspar, James L.; Mann, Troy; Behun, Vaughn; Pearson, James C., Jr.; Scarborough, Stephen

2007-01-01

Ultra-light weight and ultra-thin membrane inflatable antenna concepts are fast evolving to become the state-of-the-art antenna concepts for deep-space applications. NASA Langley Research Center has been involved in the structural dynamics research on antenna structures. One of the goals of the research is to develop structural analysis methodology for prediction of the static and dynamic response characteristics of the inflatable antenna concepts. This research is focused on the computational studies to use nonlinear large deformation finite element analysis to characterize the ultra-thin membrane responses of the antennas. Recently, structural analyses have been performed on a few parabolic reflector antennas of varying size and shape, which are referred in the paper as 0.3 meters subscale, 2 meters half-scale, and 4 meters full-scale antenna. The various aspects studied included nonlinear analysis methodology and solution techniques, ways to speed convergence in iterative methods, the sensitivities of responses with respect to structural loads, such as inflation pressure, gravity, and pretension loads in the ground and in-space conditions, and the ultra-thin membrane wrinkling characteristics. Several such intrinsic aspects studied have provided valuable insight into evaluation of structural characteristics of such antennas. While analyzing these structural characteristics, a quick study was also made to assess the applicability of dynamics scaling of the half-scale antenna. This paper presents the details of the nonlinear structural analysis results, and discusses the insight gained from the studies on the various intrinsic aspects of the analysis methodology. The predicted reflector surface characteristics of the three inflatable ultra-thin membrane parabolic reflector antenna concepts are presented as easily observable displacement fringe patterns with associated maximum values, and normal mode shapes and associated frequencies. Wrinkling patterns are

Optical analysis of cylindrical-parabolic concentrators: validity limits for models of solar disk intensity.

PubMed

Nicolás, R O

1987-09-15

Different optical analysis of cylindrical-parabolic concentrators were made by utilizing four models of intensity distribution of the solar disk, i.e., square, uniform, real, and Gaussian. In this paper, the validity conditions using such distributions are determined by calculating each model of the intensity distribution on the receiver plane of perfect and nonperfect cylindrical-parabolic concentrators. We call nonperfect concentrators those in which the normal to each differential element of the specular surface departs from its correct position by an angle sigma(epsilon), the possible values of which follow a Gaussian distribution of mean value epsilon and standard deviation sigma(epsilon). In particular, the results obtained with the models considered for a concentrator with an aperture half-angle of 45 degrees are shown and compared. An important conclusion is that for sigma(epsilon) greater, similar 4 mrad, in some cases for sigma(epsilon) greater, similar 2 mrad, the results obtained are practically independent of the model used.

Singlemode 1.1 μm InGaAs quantum well microstructured photonic crystal VCSEL

NASA Astrophysics Data System (ADS)

Stevens, Renaud; Gilet, Philippe; Larrue, Alexandre; Grenouillet, Laurent; Olivier, Nicolas; Grosse, Philippe; Gilbert, Karen; Teysseyre, Raphael; Chelnokov, Alexei

2008-02-01

In this article, we present our results on long wavelength (1.1 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode roomtemperature continuous-wave lasing operation was demonstrated for devices designed and processed with a number of different two-dimensional etched patterns. The conventional epitaxial structure was grown by Molecular Beam Epitaxy (MBE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. At room temperature and in continuous wave operation, micro-structured 50 µm diameter mesa VCSELs with 10 μm oxidation aperture exhibited more than 1 mW optical power, 2 to 5 mA threshold currents and more than 30 dB side mode suppression ratio at a wavelength of 1090 nm. These structures show slight power reduction but similar electrical performances than unstructured devices. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at extended wavelength range.

Intraband light absorption by holes in InGaAsP/InP quantum wells

NASA Astrophysics Data System (ADS)

Pavlov, N. V.; Zegrya, G. G.

2018-03-01

A microscopic analysis of the mechanism of intraband radiation absorption by holes with their transition to a spin-split band for quantum wells based on InGaAsP/InP solid solutions is performed within the framework of the four-band Kane model. The calculation is made for two polarizations of the incident radiation: along the crystal growth axis and in the plane of the quantum well. It is shown that this process can be the main mechanism of internal radiation losses for quantum well lasers. It is also shown that the dependence of the absorption coefficient on the width of the quantum well has a maximum at a well width from 40 to 60 A.

Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

DOEpatents

Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

2007-07-17

An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

NASA Technical Reports Server (NTRS)

Ting, David Z. -Y.; Chang, Yia-Chung; Bandara, Sumith V.; Gunapala, Sarath D.

2007-01-01

The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.

EPR and Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

NASA Astrophysics Data System (ADS)

König, Jürgen; MacDonald, Allan H.

2003-08-01

Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [

Modeling, Simulation, and Analysis of Quantum Transport.

DTIC Science & Technology

1991-03-15

mode operation is important to prevent standby power dissipation in circuits. The relevant struc- ture consists of a quantum well one half of which...is intentionally doped while the other half is left undoped. In the absence of any external electric field, electrons mostly reside in the doped half ...electron wavefunction to the undoped half in which the mobility is much higher because of the absence of in-situ impurity scatterir". Consequently the

The very good property for parabolic vector bundles over curves

NASA Astrophysics Data System (ADS)

Soibelman, Alexander

2018-06-01

The purpose of this note is to extend Beilinson and Drinfeld's "very good" property to moduli stacks of parabolic vector bundles on curves of genuses g = 0 and g = 1. Beilinson and Drinfeld show that for g > 1 a trivial parabolic structure is sufficient for the moduli stacks to be "very good." We give a sufficient condition on the parabolic structure for this property to hold in the case of nontrivial parabolic structure.

Comparison of Non-Parabolic Hydrodynamic Simulations for Semiconductor Devices

NASA Technical Reports Server (NTRS)

Smith, A. W.; Brennan, K. F.

1996-01-01

Parabolic drift-diffusion simulators are common engineering level design tools for semiconductor devices. Hydrodynamic simulators, based on the parabolic band approximation, are becoming more prevalent as device dimensions shrink and energy transport effects begin to dominate device characteristic. However, band structure effects present in state-of-the-art devices necessitate relaxing the parabolic band approximation. This paper presents simulations of ballistic diodes, a benchmark device, of Si and GaAs using two different non-parabolic hydrodynamic formulations. The first formulation uses the Kane dispersion relationship in the derivation of the conservation equations. The second model uses a power law dispersion relation {(hk)(exp 2)/2m = xW(exp Y)}. Current-voltage relations show that for the ballistic diodes considered. the non-parabolic formulations predict less current than the parabolic case. Explanations of this will be provided by examination of velocity and energy profiles. At low bias, the simulations based on the Kane formulation predict greater current flow than the power law formulation. As the bias is increased this trend changes and the power law predicts greater current than the Kane formulation. It will be shown that the non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation are limited due to the binomial approximation which was utilized in the derivation.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Optical Properties of III-V Semiconductor Nanostructures and Quantum Wells

DTIC Science & Technology

2006-12-31

measurements were made using a BOMEM Fourier-transform infrared spectrometer in conjunction with a continuous flow cryostat. A low- noise current...infrared photodetector ( QWIP ). Quantum well infrared photodetectors are designed from wide bandgap (III-V) semiconductor materials in such a way where...quantum confinement is created. Unlike HgCdTe which utilizes electronic transitions across the fundamental bandgap, QWIPs relies on transitions between

Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Teruhisa, E-mail: tkotani@iis.u-tokyo.ac.jp; Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505; Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567

2015-09-14

Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.

The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation

ERIC Educational Resources Information Center

Jelic, V.; Marsiglio, F.

2012-01-01

The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

NASA Technical Reports Server (NTRS)

Kost, Alan; Zou, Yao; Dapkus, P. D.; Garmire, Elsa; Lee, H. C.

1989-01-01

A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.

GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

DTIC Science & Technology

2003-12-03

of Leeds as follows: The contractor will design, fabricate, and analyze Quantum Well Infrared Photodetectors (QWIP) that detect in the 2-6 micron...SUBJECT TERMS EOARD, Sensor Technology, infrared technology, Gallium Nitride, Quantum Well Devices 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...resulting from these collaborations are the first quantum well infrared photodetectors based in the GaN material system to be reported. 1 1. In accordance

Cardiovascular autonomic adaptation in lunar and martian gravity during parabolic flight.

PubMed

Widjaja, Devy; Vandeput, Steven; Van Huffel, Sabine; Aubert, André E

2015-06-01

Weightlessness has a well-known effect on the autonomic control of the cardiovascular system. With future missions to Mars in mind, it is important to know what the effect of partial gravity is on the human body. We aim to study the autonomic response of the cardiovascular system to partial gravity levels, as present on the Moon and on Mars, during parabolic flight. ECG and blood pressure were continuously recorded during parabolic flight. A temporal analysis of blood pressure and heart rate to changing gravity was conducted to study the dynamic response. In addition, cardiovascular autonomic control was quantified by means of heart rate (HR) and blood pressure (BP) variability measures. Zero and lunar gravity presented a biphasic cardiovascular response, while a triphasic response was noted during martian gravity. Heart rate and blood pressure are positively correlated with gravity, while the general variability of HR and BP, as well as vagal indices showed negative correlations with increasing gravity. However, the increase in vagal modulation during weightlessness is not in proportion when compared to the increase during partial gravity. Correlations were found between the gravity level and modulations in the autonomic nervous system during parabolic flight. Nevertheless, with future Mars missions in mind, more studies are needed to use these findings to develop appropriate countermeasures.

Energy spectrum and transport in narrow HgTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Germanenko, A. V., E-mail: Alexander.Germanenko@urfu.ru; Minkov, G. M.; Rut, O. E.

The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.

Normal incidence infrared modulator based on single quantum well intersubband transitions

NASA Astrophysics Data System (ADS)

Vandermeiren, W.; Stiens, J.; Shkerdin, G.; De Tandt, C.; Vounckx, R.

2014-01-01

An infrared modulator of which the working principle is based on evanescent wave generation and intersubband transitions in a single AlGaAs/GaAs quantum well is presented here. CO2 laser light at normal incidence is coupled to an evanescent wave by means of a sub-wavelength diffraction grating. Modulation of the zeroth order reflective mode is achieved by applying an electric field across the quantum well. The model for deriving the complex refractive index of the quantum well region is presented and used for numerical diffraction efficiency simulations as a function of the groove height and period. Two specimens with different groove heights were fabricated. Experiments are conducted at a wavelength of 10.6 µm. At this wavelength a relatively strong absolute modulation depth of about 20% could be observed. The experimental results are in good agreement with our model and diffraction efficiency calculations.

Slow Light Using Electromagnetically Induced Transparency from Spin Coherence in [110] Strained Quantum Wells

NASA Astrophysics Data System (ADS)

Chang, Shu-Wei; Chang-Hasnain, Connie J.; Wang, Hailin

2005-03-01

The electromagnetically induced transparency from spin coherence has been proposed in [001] quantum wells recently. [1] The spin coherence is a potential candidate to demonstrate semiconductor-based slow light at room temperature. However, the spin coherence time is not long enough to demonstrate a significant slowdown factor in [001] quantum wells. Further, the required transition of light-hole excitons lies in the absorption of heavy-hole continuum states. The extra dephasing and absorption from these continuum states are drawbacks for slow light. Here, we propose to use [110] strained quantum wells instead of [001] quantum wells. The long spin relaxation time in [110] quantum wells at room temperature, and thus more robust spin coherence, [2] as well as the strain-induced separation [3, 4] of the light-hole exciton transition from the heavy-hole continuum absorption can help to slow down light in quantum wells. [1] T. Li, H. Wang, N. H. Kwong, and R. Binder, Opt. Express 11, 3298 (2003). [2] Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Phys. Rev. Lett. 83, 4196 (1999). [3] C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992). [4] C. Jagannath, E. S. Koteles, J. Lee, Y. J. Chen, B. S. Elman, and J. Y. Chi, Phys. Rev. B 34, 7027 (1986).

Electron-electron interaction in Multiple Quantum Wells

NASA Astrophysics Data System (ADS)

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

2012-07-01

The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallacher, K.; Millar, R. W.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk

2016-02-29

Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

Two-electrons quantum dot in plasmas under the external fields

NASA Astrophysics Data System (ADS)

Bahar, M. K.; Soylu, A.

2018-02-01

In this study, for the first time, the combined effects of the external electric field, magnetic field, and confinement frequency on energies of two-electron parabolic quantum dots in Debye and quantum plasmas modeled by more general exponential cosine screened Coulomb (MGECSC) potential are investigated by numerically solving the Schrödinger equation using the asymptotic iteration method. The MGECSC potential includes four different potential forms when considering different sets of the parameters in potential. Since the plasma is an important experimental argument for quantum dots, the influence of plasmas modeled by the MGECSC potential on quantum dots is probed. The confinement frequency of quantum dots and the external fields created significant quantum restrictions on quantum dot. In this study, as well as discussion of the functionalities of the quantum restrictions for experimental applications, the parameters are also compared with each other in terms of influence and behaviour. In this manner, the motivation points of this study are summarized as follows: Which parameter can be alternative to which parameter, in terms of experimental applications? Which parameters exhibit similar behaviour? What is the role of plasmas on the corresponding behaviours? In the light of these research studies, it can be said that obtained results and performed discussions would be important in experimental and theoretical research related to plasma physics and/or quantum dots.

Solar Parabolic Dish Annual Technology Evaluation Report

NASA Technical Reports Server (NTRS)

1983-01-01

The activities of the JPL Solar Thermal Power Systems Parabolic Dish Project for FY 1982 are summarized. Included are discussions on designs of module development including their concentrator, receiver, and power conversion subsystems. Analyses and test results, along with progress on field tests, Small Community Experiment System development, and tests at the Parabolic Dish Test Site are also included.

UPC BarcelonaTech Platform. Innovative aerobatic parabolic flights for life sciences experiments.

NASA Astrophysics Data System (ADS)

Perez-Poch, Antoni; Gonzalez, Daniel

We present an innovative method of performing parabolic flights with aerobatic single-engine planes. A parabolic platform has been established in Sabadell Airport (Barcelona, Spain) to provide an infraestructure ready to allow Life Sciences reduced gravity experiments to be conducted in parabolic flights. Test flights have demonstrated that up to 8 seconds of reduced gravity can be achieved by using a two-seat CAP10B aircraft, with a gravity range between 0.1 and 0.01g in the three axis. A parabolic flight campaign may be implemented with a significant reduction in budget compared to conventional parabolic flight campaigns, and with a very short time-to-access to the platform. Operational skills and proficiency of the pilot controling the aircraft during the maneuvre, sensitivity to wind gusts, and aircraft balance are the key issues that make a parabola successful. Efforts are focused on improving the total “zero-g” time and the quality of reduced gravity achieved, as well as providing more space for experiments. We report results of test flights that have been conducted in order to optimize the quality and total microgravity time. A computer sofware has been developed and implemented to help the pilot optimize his or her performance. Finally, we summarize the life science experiments that have been conducted in this platform. Specific focus is given to the very successful 'Barcelona ZeroG Challenge', this year in its third edition. This educational contest gives undergraduate and graduate students worldwide the opportunity to design their research within our platform and test it on flight, thus becoming real researchers. We conclude that aerobatic parabolic flights have proven to be a safe, unexpensive and reliable way to conduct life sciences reduced gravity experiments.

Concentrating Solar Power Projects - Chabei 64MW Molten Salt Parabolic

Science.gov Websites

project Status Date: September 29, 2016 Project Overview Project Name: Chabei 64MW Molten Salt Parabolic Technology: Parabolic trough Turbine Capacity: Net: 64.0 MW Gross: 64.0 MW Status: Under development Do you have more information, corrections, or comments? Background Technology: Parabolic trough Status: Under

Resonant Tunneling in Photonic Double Quantum Well Heterostructures.

PubMed

Cox, Joel D; Singh, Mahi R

2010-01-30

Here, we study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Intersubband Transitions in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Li, J.; Koloklov, K.; Ning, C. Z.; Larraber, D. C.; Khodaparast, G. A.; Kono, J.; Ueda, K.; Nakajima, Y.; Sasa, S.; Inoue, M.

2003-01-01

We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells.

PubMed

Endicott, J; Patanè, A; Ibáñez, J; Eaves, L; Bissiri, M; Hopkinson, M; Airey, R; Hill, G

2003-09-19

We use magnetotunneling spectroscopy to explore the admixing of the extended GaAs conduction band states with the localized N-impurity states in dilute GaAs(1-y)N(y) quantum wells. In our resonant tunneling diodes, electrons can tunnel into the N-induced E- and E+ subbands in a GaAs(1-y)N(y) quantum well layer, leading to resonant peaks in the current-voltage characteristics. By varying the magnetic field applied perpendicular to the current direction, we can tune an electron to tunnel into a given k state of the well; since the applied voltage tunes the energy, we can map out the form of the energy-momentum dispersion curves of E- and E+. The data reveal that for a small N content (approximately 0.1%) the E- and E+ subbands are highly nonparabolic and that the heavy effective mass E+ states have a significant Gamma-conduction band character even at k=0.

Bound magnetic polaron in a semimagnetic double quantum well

NASA Astrophysics Data System (ADS)

Kalpana, P.; Jayakumar, K.

2017-09-01

The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).

Quantum size and magnesium composition effects on the optical absorption in the MgxZn(1-x)O/ZnO quantum well

NASA Astrophysics Data System (ADS)

Dakhlaoui, Hassen ben Bechir; Mouna, Nefzi

2018-02-01

In this work, we investigated the effects of polarizations and structural parameters on the optical absorption coefficient (OAC) and the intersubband transition between the three lowest energy levels E1,E2 , and E3 in the MgxZn(1-x)O/ZnO single quantum well. The energy of the electron in each level and its respective wavefunction are calculated by the numerical solution of Schrödinger and Poisson equations self-consistently using an effective mass approximation. Our findings exhibit that the intersubband transitions, ΔE12 and ΔE13 , can be altered and controlled by varying the quantum well width and the magnesium composition, x. Moreover, our results suggest that the optical absorption coefficients, α12 and α13 , can be modulated principally by adjusting the quantum well width, especially the optical absorption coefficient (α12), which presents a red shift by raising the quantum well thickness. Contrary to α12 , the optical absorption coefficient, α13 , can present either a red or a blue shift by increasing the quantum well width. The process responsible for this behavior, which can be suitable for optoelectronic device applications, is discussed here in detail.

Ferroelectric tunnel junctions with multi-quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn; Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells

NASA Astrophysics Data System (ADS)

Karalic, Matija; Mueller, Susanne; Mittag, Christopher; Pakrouski, Kiryl; Wu, QuanSheng; Soluyanov, Alexey A.; Troyer, Matthias; Tschirky, Thomas; Wegscheider, Werner; Ensslin, Klaus; Ihn, Thomas

2016-12-01

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the noninverted semiconducting regime. The activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by a strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

Intraband Raman laser gain in a boron nitride coupled quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moorthy, N. Narayana; Peter, A. John, E-mail: a.john.peter@gmail.com

2016-05-23

On-centre impurity related electronic and optical properties are studied in a Boron nitride coupled quantum well. Confined energies for the intraband transition are investigated by studying differential cross section of electron Raman scattering taking into consideration of spatial confinement in a B{sub 0.3}Ga{sub 0.7}N/BN coupled quantum well. Raman gain as a function of incident optical pump intensity is computed for constant well width. The enhancement of Raman gain is observed with the application of pump power. The results can be applied for the potential applications for fabricating some optical devices such as optical switches, infrared photo-detectors and electro-optical modulator.

Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

NASA Astrophysics Data System (ADS)

Hong, Songcheol

A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

Quantum deformations of conformal algebras with mass-like deformation parameters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frydryszak, Andrzej; Lukierski, Jerzy; Mozrzymas, Marek

1998-12-15

We recall the mathematical apparatus necessary for the quantum deformation of Lie algebras, namely the notions of coboundary Lie algebras, classical r-matrices, classical Yang-Baxter equations (CYBE), Froebenius algebras and parabolic subalgebras. Then we construct the quantum deformation of D=1, D=2 and D=3 conformal algebras, showing that this quantization introduce fundamental mass parameters. Finally we consider with more details the quantization of D=4 conformal algebra. We build three classes of sl(4,C) classical r-matrices, satisfying CYBE and depending respectively on 8, 10 and 12 generators of parabolic subalgebras. We show that only the 8-dimensional r-matrices allow to impose the D=4 conformal o(4,2){approx_equal}su(2,2)more » reality conditions. Weyl reflections and Dynkin diagram automorphisms for o(4,2) define the class of admissible bases for given classical r-matrices.« less

Reverberation Modelling Using a Parabolic Equation Method

DTIC Science & Technology

2012-10-01

the limits of their applicability. Results: Transmission loss estimates produced by the PECan parabolic equation acoustic model were used in...environments is possible when used in concert with a parabolic equation passive acoustic model . Future plans: The authors of this report recommend further...technique using other types of acoustic models should be undertaken. Furthermore, as the current method when applied as-is results in estimates that reflect

A gold hybrid structure as optical coupler for quantum well infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Jiayi; Li, Qian; Jing, Youliang

2014-08-28

A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light.more » The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.« less

Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

DOE PAGES

Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; ...

2015-05-26

The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy,more » and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.« less

Cost/performance of solar reflective surfaces for parabolic dish concentrators

NASA Technical Reports Server (NTRS)

Bouquet, F.

1980-01-01

Materials for highly reflective surfaces for use in parabolic dish solar concentrators are discussed. Some important factors concerning performance of the mirrors are summarized, and typical costs are treated briefly. Capital investment cost/performance ratios for various materials are computed specifically for the double curvature parabolic concentrators using a mathematical model. The results are given in terms of initial investment cost for reflective surfaces per thermal kilowatt delivered to the receiver cavity for various operating temperatures from 400 to 1400 C. Although second surface glass mirrors are emphasized, first surface, chemically brightened and anodized aluminum surfaces as well as second surface, metallized polymeric films are treated. Conventional glass mirrors have the lowest cost/performance ratios, followed closely by aluminum reflectors. Ranges in the data due to uncertainties in cost and mirror reflectance factors are given.

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

Optical properties of the Tietz-Hua quantum well under the applied external fields

NASA Astrophysics Data System (ADS)

Kasapoglu, E.; Sakiroglu, S.; Ungan, F.; Yesilgul, U.; Duque, C. A.; Sökmen, I.

2017-12-01

In this study, the effects of the electric and magnetic fields as well as structure parameter- γ on the total absorption coefficient, including linear and third order nonlinear absorption coefficients for the optical transitions between any two subband in the Tietz-Hua quantum well have been investigated. The optical transitions were investigated by using the density matrix formalism and the perturbation expansion method. The Tietz-Hua quantum well becomes narrower (wider) when the γ - structure parameter increases (decreases) and so the energies of the bound states will be functions of this parameter. Therefore, we can provide the red or blue shift in the peak position of the absorption coefficient by changing the strength of the electric and magnetic fields as well as the structure parameters and these results can be used to adjust and control the optical properties of the Tietz-Hua quantum well.

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2015-06-01

Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al0.3Ga0.7As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

An X-band parabolic antenna based on gradient metasurface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Wang; Yang, Helin, E-mail: emyang@mail.ccnu.edu.cn; Tian, Ying

We present a novel parabolic antenna by employing reflection gradient metasurface which is composed of a series of circle patches on a grounded dielectric substrate. Similar to the traditional parabolic antenna, the proposed antenna take the metasurface as a “parabolic reflector” and a patch antenna was placed at the focal point of the metasurface as a feed source, then the quasi-spherical wave emitted by the source is reflected and transformed to plane wave with high efficiency. Due to the focus effect of reflection, the beam width of the antenna has been decreased from 85.9° to 13° and the gain hasmore » been increased from 6.5 dB to 20.8 dB. Simulation and measurement results of both near and far-field plots demonstrate good focusing properties of the proposed parabolic antenna.« less

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires.

PubMed

Erhard, N; Zenger, S; Morkötter, S; Rudolph, D; Weiss, M; Krenner, H J; Karl, H; Abstreiter, G; Finley, J J; Koblmüller, G; Holleitner, A W

2015-10-14

We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs core-shell nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photothermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.

Innovative design of parabolic reflector light guiding structure

NASA Astrophysics Data System (ADS)

Whang, Allen J.; Tso, Chun-Hsien; Chen, Yi-Yung

2008-02-01

Due to the idea of everlasting green architecture, it is of increasing importance to guild natural light into indoors. The advantages are multifold - to have better color rendering index, excellent energy savings from environments viewpoints and make humans more healthy, etc. Our search is to design an innovative structure, to convert outdoor sun light impinges on larger surfaces, into near linear light beam sources, later convert this light beam into near point sources which enters the indoor spaces then can be used as lighting sources indoors. We are not involved with the opto-electrical transformation, to the guild light into to the building, to perform the illumination, as well as the imaging function. Because non-imaging optics, well known for apply to the solar concentrators, that can use non-imaging structures to fulfill our needs, which can also be used as energy collectors in solar energy devices. Here, we have designed a pair of large and small parabolic reflector, which can be used to collect daylight and change area from large to small. Then we make a light-guide system that is been designed by us use of this parabolic reflector to guide the collection light, can pick up the performance for large surface source change to near linear source and a larger collection area.

Orthostatic Intolerance and Motion Sickness After Parabolic Flight

NASA Technical Reports Server (NTRS)

Schlegel, Todd T.; Brown, Troy E.; Wood, Scott J.; Benavides, Edgar W.; Bondar, Roberta L.; Stein, Flo; Moradshahi, Peyman; Harm, Deborah L.; Low, Phillip A.

1999-01-01

Orthostatic intolerance is common in astronauts after prolonged space flight. However, the "push-pull effect" in military aviators suggests that brief exposures to transitions between hypo- and hypergravity are sufficient to induce untoward autonomic cardiovascular physiology in susceptible individuals. We therefore investigated orthostatic tolerance and autonomic cardiovascular function in 16 healthy test subjects before and after a seated 2-hr parabolic flight. At the same time, we also investigated relationships between parabolic flight-induced vomiting and changes in orthostatic and autonomic cardiovascular function. After parabolic flight, 8 of 16 subjects could not tolerate a 30-min upright tilt test, compared to 2 of 16 before flight. Whereas new intolerance in non-Vomiters resembled the clinical postural tachycardia syndrome (POTS), new intolerance in Vomiters was characterized by comparatively isolated upright hypocapnia and cerebral vasoconstriction. As a group, Vomiters also had evidence for increased postflight fluctuations in efferent vagal-cardiac nerve traffic occurring independently of any superimposed change in respiration. Results suggest that syndromes of orthostatic intolerance resembling those occurring after space flight can occur after a brief (i.e., 2-hr) parabolic flight.

Temperature-Induced Topological Phase Transition in HgTe Quantum Wells

NASA Astrophysics Data System (ADS)

Kadykov, A. M.; Krishtopenko, S. S.; Jouault, B.; Desrat, W.; Knap, W.; Ruffenach, S.; Consejo, C.; Torres, J.; Morozov, S. V.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.

2018-02-01

We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures, and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electronlike and holelike subbands. Their crossing at a critical magnetic field Bc is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of Bc, we directly extract the critical temperature Tc at which the bulk band gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.

Half-Lives of Proton Emitters With a Deformed Density-Dependent Model

NASA Astrophysics Data System (ADS)

Qian, Yi-Bin; Ren, Zhong-Zhou; Ni, Dong-Dong; Sheng, Zong-Qiang

2010-11-01

Half-lives of proton radioactivity are investigated with a deformed density-dependent model. The single folding potential which is dependent on deformation and orientation is employed to calculate the proton decay width through the deformed potential barrier. In addition, the spectroscopic factor is taken into account in the calculation, which is obtained in the relativistic mean field theory with NL3. The calculated results of semi-spherical nuclei are found to be in good agreement with the experimental data, and the results of well-deformed nuclei are also satisfactory. Moreover, a formula for the spherical proton emission half-life based on the Gamow quantum tunneling theory is presented.

Strict parabolicity of the multifractal spectrum at the Anderson transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suslov, I. M., E-mail: suslov@kapitza.ras.ru

Using the well-known “algebra of multifractality,” we derive the functional equation for anomalous dimensions Δ{sub q}, whose solution Δ = χq(q–1) corresponds to strict parabolicity of the multifractal spectrum. This result demonstrates clearly that a correspondence of the nonlinear σ-models with the initial disordered systems is not exact.

Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

NASA Astrophysics Data System (ADS)

Wen, Pengyan; Liu, Jianping; Zhang, Shuming; Zhang, Liqun; Ikeda, Masao; Li, Deyao; Tian, Aiqin; Zhang, Feng; Cheng, Yang; Zhou, Wei; Yang, Hui

2017-11-01

The temperature, power, and voltage dependent photoluminescence spectra are studied in InGaN/GaN double quantum well blue laser diodes. Emissions from the two quantum wells can be distinguished at low temperature at low excitation power density due to the different built-in electric field in the two quantum wells. This finding is utilized to study the degradation of InGaN/GaN blue laser diodes. Two peaks are observed for the non-aged laser diode (LD), while one peak for the aged LD which performed 3200 h until no laser output is detected. The disappearance of the high energy peak in the photoluminescence spectra indicates a heavier degradation of the quantum well on the p-side, which agrees with our previous observation that both the linewidth and the potential fluctuation of InGaN quantum wells (QWs) reduced for the aged LDs.

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ju, Gunwu; Na, Byung Hoon

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Quantum and semiclassical physics behind ultrafast optical nonlinearity in the midinfrared: the role of ionization dynamics within the field half cycle.

PubMed

Serebryannikov, E E; Zheltikov, A M

2014-07-25

Ultrafast ionization dynamics within the field half cycle is shown to be the key physical factor that controls the properties of optical nonlinearity as a function of the carrier wavelength and intensity of a driving laser field. The Schrödinger-equation analysis of a generic hydrogen quantum system reveals universal tendencies in the wavelength dependence of optical nonlinearity, shedding light on unusual properties of optical nonlinearities in the midinfrared. For high-intensity low-frequency fields, free-state electrons are shown to dominate over bound electrons in the overall nonlinear response of a quantum system. In this regime, semiclassical models are shown to offer useful insights into the physics behind optical nonlinearity.

A comparative Thermal Analysis of conventional parabolic receiver tube and Cavity model tube in a Solar Parabolic Concentrator

NASA Astrophysics Data System (ADS)

Arumugam, S.; Ramakrishna, P.; Sangavi, S.

2018-02-01

Improvements in heating technology with solar energy is gaining focus, especially solar parabolic collectors. Solar heating in conventional parabolic collectors is done with the help of radiation concentration on receiver tubes. Conventional receiver tubes are open to atmosphere and loose heat by ambient air currents. In order to reduce the convection losses and also to improve the aperture area, we designed a tube with cavity. This study is a comparative performance behaviour of conventional tube and cavity model tube. The performance formulae were derived for the cavity model based on conventional model. Reduction in overall heat loss coefficient was observed for cavity model, though collector heat removal factor and collector efficiency were nearly same for both models. Improvement in efficiency was also observed in the cavity model’s performance. The approach towards the design of a cavity model tube as the receiver tube in solar parabolic collectors gave improved results and proved as a good consideration.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Reversed oxygen sensing using colloidal quantum wells towards highly emissive photoresponsive varnishes

PubMed Central

Lorenzon, Monica; Christodoulou, Sotirios; Vaccaro, Gianfranco; Pedrini, Jacopo; Meinardi, Francesco; Moreels, Iwan; Brovelli, Sergio

2015-01-01

Colloidal quantum wells combine the advantages of size-tunable electronic properties with vast reactive surfaces that could allow one to realize highly emissive luminescent-sensing varnishes capable of detecting chemical agents through their reversible emission response, with great potential impact on life sciences, environmental monitoring, defence and aerospace engineering. Here we combine spectroelectrochemical measurements and spectroscopic studies in a controlled atmosphere to demonstrate the ‘reversed oxygen-sensing’ capability of CdSe colloidal quantum wells, that is, the exposure to oxygen reversibly increases their luminescence efficiency. Spectroelectrochemical experiments allow us to directly relate the sensing response to the occupancy of surface states. Magneto-optical measurements demonstrate that, under vacuum, heterostructured CdSe/CdS colloidal quantum wells stabilize in their negative trion state. The high starting emission efficiency provides a possible means to enhance the oxygen sensitivity by partially de-passivating the particle surfaces, thereby enhancing the density of unsaturated sites with a minimal cost in term of luminescence losses. PMID:25910499

Environmental Controls and Eco-geomorphic Interactions of the Barchan-to-parabolic Dune Stabilisation and the Parabolic-to-barchan Dune Reactivation

NASA Astrophysics Data System (ADS)

Yan, Na; Baas, Andreas

2015-04-01

Parabolic dunes are one of a few common aeolian landforms which are highly controlled by eco-geomorphic interactions. Parabolic dunes, on the one hand, can be developed from highly mobile dune landforms, barchans for instance, in an ameliorated vegetation condition; or on the other hand, they can be reactivated and transformed back into mobile dunes due to vegetation deterioration. The fundamental mechanisms and eco-geomorphic interactions controlling both dune transformations remain poorly understood. To bridge the gap between complex processes involved in dune transformations on a relatively long temporal scale and real world monitoring records on a very limited temporal scale, this research has extended the DECAL model to incorporate 'dynamic' growth functions and the different 'growth' of perennial shrubs between growing and non-growing seasons, informed by field measurements and remote sensing analysis, to explore environmental controls and eco-geomorphic interactions of both types of dune transformation. A non-dimensional 'dune stabilising index' is proposed to capture the interactions between environmental controls (i.e. the capabilities of vegetation to withstand wind erosion and sand burial, the sandy substratum thickness, the height of the initial dune, and the sand transport potential), and establish the linkage between these controls and the geometry of a stabilising dune. An example demonstrates how to use the power-law relationship between the dune stabilising index and the normalised migration distance to assist in extrapolating the historical trajectories of transforming dunes. The modelling results also show that a slight increase in vegetation cover of an initial parabolic dune can significantly increase the reactivation threshold of climatic impact (both drought stress and wind strength) required to reactivate a stabilising parabolic dune into a barchan. Four eco-geomorphic interaction zones that govern a barchan-to-parabolic dune transformation

Finite-time blow-up for quasilinear degenerate Keller-Segel systems of parabolic-parabolic type

NASA Astrophysics Data System (ADS)

Hashira, Takahiro; Ishida, Sachiko; Yokota, Tomomi

2018-05-01

This paper deals with the quasilinear degenerate Keller-Segel systems of parabolic-parabolic type in a ball of RN (N ≥ 2). In the case of non-degenerate diffusion, Cieślak-Stinner [3,4] proved that if q > m + 2/N, where m denotes the intensity of diffusion and q denotes the nonlinearity, then there exist initial data such that the corresponding solution blows up in finite time. As to the case of degenerate diffusion, it is known that a solution blows up if q > m + 2/N (see Ishida-Yokota [13]); however, whether the blow-up time is finite or infinite has been unknown. This paper gives an answer to the unsolved problem. Indeed, the finite-time blow-up of energy solutions is established when q > m + 2/N.

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-08-01

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect tomore » the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.« less

Quantum confinement of a hydrogenic donor in a double quantum well: Through diamagnetic susceptibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vignesh, G.; Nithiananthi, P., E-mail: nithyauniq@gmail.com

2015-06-24

Diamagnetic susceptibility of a randomly distributed donor in a GaAs/Al{sub 0.3}Ga{sub 0.7}As Double Quantum Well has been calculated in its ground state as a function of barrier and well width. It is shown that the modification in the barrier and well dimension significantly influences the dimensional character of the donor through modulating the subband distribution and in turn the localization of the donor. The effect of barrier and well thickness on the interparticle distance has also been observed. Interestingly it opens up the possibility of tuning the susceptibility and monitoring the tunnel coupling among the wells.

Theory of electron g-tensor in bulk and quantum-well semiconductors

NASA Astrophysics Data System (ADS)

Lau, Wayne H.; Flatte', Michael E.

2004-03-01

We present quantitative calculations for the electron g-tensors in bulk and quantum-well semiconductors based on a generalized P.p envelope function theory solved in a fourteen-band restricted basis set. The dependences of g-tensor on structure, magnetic field, carrier density, temperature, and spin polarization have been explored and will be described. It is found that at temperatures of a few Kelvin and fields of a few Tesla, the g-tensors for bulk semiconductors develop quasi-steplike dependences on carrier density or magnetic field due to magnetic quantization, and this effect is even more pronounced in quantum-well semiconductors due to the additional electric quantization along the growth direction. The influence of quantum confinement on the electron g-tensors in QWs is studied by examining the dependence of electron g-tensors on well width. Excellent agreement between these calculated electron g-tensors and measurements [1-2] is found for GaAs/AlGaAs QWs. This work was supported by DARPA/ARO. [1] A. Malinowski and R. T. Harley, Phys. Rev. B 62, 2051 (2000);[2] Le Jeune et al., Semicond. Sci. Technol. 12, 380 (1997).

Commercialization of parabolic dish systems

NASA Technical Reports Server (NTRS)

Washom, B.

1982-01-01

The impact of recent federal tax and regulatory legislation on the commercialization of parabolic solar reflector technology is assessed. Specific areas in need of technical or economic improvement are noted.

Commercialization of parabolic dish systems

NASA Astrophysics Data System (ADS)

Washom, B.

1982-07-01

The impact of recent federal tax and regulatory legislation on the commercialization of parabolic solar reflector technology is assessed. Specific areas in need of technical or economic improvement are noted.

The operation principle of the well in quantum dot stack infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jheng-Han; Wu, Zong-Ming; Liao, Yu-Min

2013-12-28

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas atmore » temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.« less

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

PubMed

Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

2016-12-01

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

Interfacial properties at the organic-metal interface probed using quantum well states

NASA Astrophysics Data System (ADS)

Lin, Meng-Kai; Nakayama, Yasuo; Wang, Chin-Yung; Hsu, Jer-Chia; Pan, Chih-Hao; Machida, Shin-ichi; Pi, Tun-Wen; Ishii, Hisao; Tang, S.-J.

2012-10-01

Using angle-resolved photoemission spectroscopy, we investigated the interfacial properties between the long-chain normal-alkane molecule n-CH3(CH2)42CH3 [tetratetracontane (TTC)] and uniform Ag films using the Ag quantum well states. The entire quantum well state energy band dispersions were observed to shift toward the Fermi level with increasing adsorption coverage of TTC up to 1 monolayer (ML). However, the energy shifts upon deposition of 1 ML of TTC are approximately inversely dependent on the Ag film thickness, indicating a quantum-size effect. In the framework of the pushback and image-force models, we applied the Bohr-Sommerfeld quantization rule with the modified Coulomb image potential for the phase shift at the TTC/Ag interface to extract the dielectric constant for 1 ML of TTC.

Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

NASA Astrophysics Data System (ADS)

Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

2018-01-01

We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl; Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw; Kaminska, Agata

We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gapmore » pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.« less

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

DOE PAGES

Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

2015-10-07

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n α, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantummore » wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Ashish; Barth, Michael; Madan, Himanshu

2014-08-04

Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSbmore » for future technology node.« less

Magneto-exciton transitions in laterally coupled quantum dots

NASA Astrophysics Data System (ADS)

Barticevic, Zdenka; Pacheco, Monica; Duque, Carlos A.; Oliveira, Luiz E.

2008-03-01

We present a study of the electronic and optical properties of laterally coupled quantum dots. The excitonic spectra of this system under the effects of an external magnetic field applied perpendicular to the plane of the dots is obtained, with the potential of every individual dot taken as the superposition of a quantum well potential along the axial direction with a lateral parabolic confinement potential, and the coupled two- dot system then modeled by a superposition of the potentials of each dot, with their minima at different positions and truncated at the intersection plane. The wave functions and eigenvalues are obtained in the effective-mass approximation by using an extended variational approach in which the magneto- exciton states are simultaneously obtained [1]. The allowed magneto-exciton transitions are investigated by using circularly polarized radiation in the plane perpendicular to the magnetic field. We present results on the excitonic absorption coefficient as a function of the photon energy for different geometric quantum-dot confinement and magnetic-field values. Reference: [1] Z. Barticevic, M. Pacheco, C. A. Duque and L. E. Oliveira, Phys. Rev. B 68, 073312 (2003).

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Larsson, Anders; Lee, Luke P.

1991-01-01

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15}more » layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.« less

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

2015-02-15

A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

Altered Gravity Simulated by Parabolic Flight and Water Immersion Leads to Decreased Trunk Motion

PubMed Central

Tian, Yu; Li, Fan; Zhang, Shaoyao; Zhang, Lin; Guo, Yaoyu; Liu, Weibo; Wang, Chunhui; Chen, Shanguang; Guo, Jinhu

2015-01-01

Gravity is one of the important environmental factors that influence the physiologies and behaviors of animals and humans, and changes in gravity elicit a variety of physiological and behavioral alterations that include impaired movement coordination, vertigo, spatial disorientation, and perceptual illusions. To elucidate the effects of gravity on human physiology and behavior, we examined changes in wrist and trunk activities and heart rate during parabolic flight and the activity of wrist and trunk in water immersion experiments. Data from 195 person-time parabolas performed by eight subjects revealed that the trunk motion counts decreased by approximately half during ascending legs (hypergravity), relative to the data acquired before the parabolic flights. In contrast, the wrist activity remained unchanged. The results from the water immersion experiments demonstrated that in the underwater condition, both the wrist and trunk activities were significantly decreased but the latter decreased to a much lower level. Together, these data suggest that gravitational alterations can result in differential influences on the motions of the wrist and the trunk. These findings might be important for understanding the degeneration of skeleton and muscular system and performance of astronauts in microgravity. PMID:26208253

Galilean symmetry in a noncommutative gravitational quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Anirban

2010-06-15

A thorough analysis of Galilean symmetries for the gravitational well problem on a noncommutative plane is presented. A complete closure of the one-parameter centrally extended Galilean algebra is realized for the model. This implies that the field theoretic model constructed to describe noncommutative gravitational quantum well in [A. Saha, Eur. Phys. J. C 51, 199 (2007).] is indeed independent of the coordinate choice. Hence the energy spectrum predicted by the model can be associated with the experimental results to establish the upper bound on a time-space noncommutative parameter. Interestingly, noncommutativity is shown to increase the gravitational pull on the neutronmore » trapped in the gravitational well.« less

Synergies between optical and physical variables in intercepting parabolic targets

PubMed Central

Gómez, José; López-Moliner, Joan

2013-01-01

Interception requires precise estimation of time-to-contact (TTC) information. A long-standing view posits that all relevant information for extracting TTC is available in the angular variables, which result from the projection of distal objects onto the retina. The different timing models rooted in this tradition have consequently relied on combining visual angle and its rate of expansion in different ways with tau being the most well-known solution for TTC. The generalization of these models to timing parabolic trajectories is not straightforward. For example, these different combinations rely on isotropic expansion and usually assume first-order information only, neglecting acceleration. As a consequence no optical formulations have been put forward so far to specify TTC of parabolic targets with enough accuracy. It is only recently that context-dependent physical variables have been shown to play an important role in TTC estimation. Known physical size and gravity can adequately explain observed data of linear and free-falling trajectories, respectively. Yet, a full timing model for specifying parabolic TTC has remained elusive. We here derive two formulations that specify TTC for parabolic ball trajectories. The first specification extends previous models in which known size is combined with thresholding visual angle or its rate of expansion to the case of fly balls. To efficiently use this model, observers need to recover the 3D radial velocity component of the trajectory which conveys the isotropic expansion. The second one uses knowledge of size and gravity combined with ball visual angle and elevation angle. Taking into account the noise due to sensory measurements, we simulate the expected performance of these models in terms of accuracy and precision. While the model that combines expansion information and size knowledge is more efficient during the late trajectory, the second one is shown to be efficient along all the flight. PMID:23720614

Parabolic flight induces changes in gene expression patterns in Arabidopsis thaliana.

PubMed

Paul, Anna-Lisa; Manak, Michael S; Mayfield, John D; Reyes, Matthew F; Gurley, William B; Ferl, Robert J

2011-10-01

Our primary objective was to evaluate gene expression changes in Arabidopsis thaliana in response to parabolic flight as part of a comprehensive approach to the molecular biology of spaceflight-related adaptations. In addition, we wished to establish parabolic flight as a tractable operations platform for molecular biology studies. In a succession of experiments on NASA's KC-135 and C-9 parabolic aircraft, Arabidopsis plants were presented with replicated exposure to parabolic flight. Transcriptome profiling revealed that parabolic flight caused changes in gene expression patterns that stood the statistical tests of replication on three different flight days. The earliest response, after 20 parabolas, was characterized by a prominence of genes associated with signal transduction. After 40 parabolas, this prominence was largely replaced by genes associated with biotic and abiotic stimuli and stress. Among these responses, three metabolic processes stand out in particular: the induction of auxin metabolism and signaling, the differential expression of genes associated with calcium-mediated signaling, and the repression of genes associated with disease resistance and cell wall biochemistry. Many, but not all, of these responses are known to be involved in gravity sensing in plants. Changes in auxin-related gene expression were also recorded by reporter genes tuned to auxin signal pathways. These data demonstrate that the parabolic flight environment is appropriate for molecular biology research involving the transition to microgravity, in that with replication, proper controls, and analyses, gene expression changes can be observed in the time frames of typical parabolic flight experiments.

Intrinsic Dirac half-metal and quantum anomalous Hall phase in a hexagonal metal-oxide lattice

NASA Astrophysics Data System (ADS)

Zhang, Shou-juan; Zhang, Chang-wen; Zhang, Shu-feng; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen

2017-11-01

The quantum anomalous Hall (QAH) effect has attracted extensive attention due to time-reversal symmetry broken by a staggered magnetic flux emerging from ferromagnetic ordering and spin-orbit coupling. However, the experimental observations of the QAH effect are still challenging due to its small nontrivial bulk gap. Here, based on density functional theory and Berry curvature calculations, we propose the realization of intrinsic QAH effect in two-dimensional hexagonal metal-oxide lattice, N b2O3 , which is characterized by the nonzero Chern number (C =1 ) and chiral edge states. Spin-polarized calculations indicate that it exhibits a Dirac half-metal feature with temperature as large as TC=392 K using spin-wave theory. When the spin-orbit coupling is switched on, N b2O3 becomes a QAH insulator. Notably, the nontrivial topology is robust against biaxial strain with its band gap reaching up to Eg=75 meV , which is far beyond room temperature. A tight-binding model is further constructed to understand the origin of nontrivially electronic properties. Our findings on the Dirac half-metal and room-temperature QAH effect in the N b2O3 lattice can serve as an ideal platform for developing future topotronics devices.

Controllable parabolic-cylinder optical rogue wave.

PubMed

Zhong, Wei-Ping; Chen, Lang; Belić, Milivoj; Petrović, Nikola

2014-10-01

We demonstrate controllable parabolic-cylinder optical rogue waves in certain inhomogeneous media. An analytical rogue wave solution of the generalized nonlinear Schrödinger equation with spatially modulated coefficients and an external potential in the form of modulated quadratic potential is obtained by the similarity transformation. Numerical simulations are performed for comparison with the analytical solutions and to confirm the stability of the rogue wave solution obtained. These optical rogue waves are built by the products of parabolic-cylinder functions and the basic rogue wave solution of the standard nonlinear Schrödinger equation. Such rogue waves may appear in different forms, as the hump and paw profiles.

Growth and properties of Hg-based quantum well structures and superlattices

NASA Technical Reports Server (NTRS)

Schetzina, J. F.

1990-01-01

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

NASA Astrophysics Data System (ADS)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Mid- and Long-IR Broadband Quantum Well Photodetector

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2012-01-01

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

6.2-GHz modulated terahertz light detection using fast terahertz quantum well photodetectors.

PubMed

Li, Hua; Wan, Wen-Jian; Tan, Zhi-Yong; Fu, Zhang-Long; Wang, Hai-Xia; Zhou, Tao; Li, Zi-Ping; Wang, Chang; Guo, Xu-Guang; Cao, Jun-Cheng

2017-06-14

The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation are thermal detectors, i.e., pyroelectric sensors and bolometers. This class of terahertz detectors is normally characterized by low modulation frequency (dozens or hundreds of Hz). Here we demonstrate the first fast semiconductor-based terahertz quantum well photodetectors by carefully designing the device structure and microwave transmission line for high frequency signal extraction. Modulation response bandwidth of gigahertz level is obtained. As an example, the 6.2-GHz modulated terahertz light emitted from a Fabry-Pérot terahertz quantum cascade laser is successfully detected using the fast terahertz quantum well photodetector. In addition to the fast terahertz detection, the technique presented in this work can also be used for optically characterizing the frequency stability of terahertz quantum cascade lasers, heterodyne detections and photomixing applications.

Proceedings of the Fifth Parabolic Dish Solar Thermal Power Program

NASA Technical Reports Server (NTRS)

Lucas, J. W. (Editor)

1984-01-01

The proceedings of the Fifth Parabolic Dish Solar Thermal Power Program Annual Review are presented. The results of activities within the Parabolic Dish Technology and Module/Systems Development element of the Department of Energy's Solar Thermal Energy Systems Program were emphasized. Among the topics discussed were: overall Project and Program aspects, Stirling and Brayton module development, concentrator and engine/receiver development along with associated hardware and test results; distributed systems operating experience; international parabolic dish development activities; and non-DOE-sponsored domestic dish activities. Solar electric generation was also addressed.

Theoretical study of charge and spin-resolved quantum transport in III-V semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Botha, Andre Erasmus

2003-07-01

This thesis is a theoretical investigation into the spin-resolved transport properties of III-V semiconductor quantum wells. Based on a modified 8 x 8 k · p matrix Hamiltonian, a theory is developed to study the recombination rate in type-II semi metallic quantum wells. The non-parabolicity of the energy band structure and its anisotropy is included via the interband matrix elements and the addition of an anisotropic crystal field potential (parameterized by delta). The effects of externally applied electric and magnetic fields are incorporated into the theory. The electric field is incorporated using a WKB-type approximation. In order to study the anisotropy, the magnetic field is incorporated so that it can be applied at an arbitrary angle theta, with respect to the crystallographic direction c[001]. The case of oblique tunneling (k|| ≠ 0), is also considered. Several interesting results, from calculations of the transmission coefficient, recombination rate, and electron-spin polarization, are presented and discussed for both n-type and p-type single and double quantum wells made from clean InAs and GaSb. For example, in the case of a 150 A wide GaSb/InAs/GaSb quantum well, with B = 4 T, and theta = pi/8, the two maxima in the electron-spin polarization, from the ground and first excited resonant states, are found to be approximately 75%, and 35%, respectively. As theta is varied, a maximum polarization is achieved for a given magnetic field, and this maximum depends on the value of the anisotropy parameter, delta. By using a more sophisticated 14 x 14 band k · p formalism, which explicitly takes into account the coupling between higher bands ( Gc15-Gu 15,Gc1-G u15 , and Gc1-Gc15 ), a theory is developed for the total zero-field spin-splitting and resulting electron-spin polarization in symmetric and asymmetric type-II quantum wells. This theory includes the non-parabolicity, non sphericity, and anisotropy of the energy band structure. The anisotropy in the

Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission

NASA Astrophysics Data System (ADS)

Makhov, I. S.; Panevin, V. Yu; Firsov, D. A.; Vorobjev, L. E.; Sofronov, A. N.; Vinnichenko, M. Ya; Maleev, N. A.; Vasil'ev, A. P.

2018-03-01

Terahertz and near-infrared photoluminescence under conditions of interband stimulated emission are studied in n-GaAs/AlGaAs quantum well laser structure. The observed terahertz emission is related to the optical transitions of nonequilibrium electrons from the first electron subband and excited donor states to donor ground states in quantum wells. The opportunity to increase the intensity of impurity-assisted terahertz emission due to interband stimulated emission with the participation of impurity centres is demonstrated.

Accelerating Airy beams with non-parabolic trajectories

NASA Astrophysics Data System (ADS)

Besieris, Ioannis M.; Shaarawi, Amr M.

2014-11-01

A class of Airy accelerating beams with non-parabolic trajectories are derived by means of a novel application of a conformal transformation originally due to Bateman. It is also shown that the salient features of these beams are very simply incorporated in a solution which is derived by applying a conventional conformal transformation together with a Galilean translation to the basic accelerating Airy beam solution of the two-dimensional paraxial equation. Motivation for the non-parabolic beam trajectories is provided and the effects of finite-energy requirements are discussed.

Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

NASA Astrophysics Data System (ADS)

Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.

2016-05-01

The donor impurity binding energy in CdTe / Cd1-xMnxTe QWW with square well confinement along x - direction and parabolic confinement along y - direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

The isentropic quantum drift-diffusion model in two or three space dimensions

NASA Astrophysics Data System (ADS)

Chen, Xiuqing

2009-05-01

We investigate the isentropic quantum drift-diffusion model, a fourth order parabolic system, in space dimensions d = 2, 3. First, we establish the global weak solutions with large initial value and periodic boundary conditions. Then we show the semiclassical limit by delicate interpolation estimates and compactness argument.

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

NASA Astrophysics Data System (ADS)

Albo, Asaf; Flores, Yuri V.; Hu, Qing; Reno, John L.

2017-09-01

The mechanisms that limit the temperature performance of diagonal GaAs/Al0.15GaAs0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure. We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Moreover, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.

PubMed

Baranowski, M; Kudrawiec, R; Latkowska, M; Syperek, M; Misiewicz, J; Sarmiento, T; Harris, J S

2013-02-13

In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Storage and retrieval of light pulse in coupled quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jibing, E-mail: liu0328@foxmail.com; Liu, Na; Shan, Chuanjia

In this paper, we propose an effective scheme to create a frequency entangled states based on bound-to-bound inter-subband transitions in an asymmetric three-coupled quantum well structure. A four-subband cascade configuration quantum well structure is illuminated with a pulsed probe field and two continuous wave control laser fields to generate a mixing field. By properly adjusting the frequency detunings and the intensity of coupling fields, the conversion efficiency can reach 100%. A maximum entangled state can be achieved by selecting a proper length of the sample. We also numerically investigate the propagation dynamics of the probe pulse and mixing pulse, themore » results show that two frequency components are able to exchange energy through a four-wave mixing process. Moreover, by considering special coupling fields, the storage and retrieval of the probe pulse is also numerically simulated.« less

Anti-Stokes Luminescence in High Quality Quantum Wells

NASA Astrophysics Data System (ADS)

Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.

1997-11-01

We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.

Mechatronic Prototype of Parabolic Solar Tracker.

PubMed

Morón, Carlos; Díaz, Jorge Pablo; Ferrández, Daniel; Ramos, Mari Paz

2016-06-15

In the last 30 years numerous attempts have been made to improve the efficiency of the parabolic collectors in the electric power production, although most of the studies have focused on the industrial production of thermoelectric power. This research focuses on the application of this concentrating solar thermal power in the unexplored field of building construction. To that end, a mechatronic prototype of a hybrid paraboloidal and cylindrical-parabolic tracker based on the Arduido technology has been designed. The prototype is able to measure meteorological data autonomously in order to quantify the energy potential of any location. In this way, it is possible to reliably model real commercial equipment behavior before its deployment in buildings and single family houses.

Colloidal Spherical Quantum Wells with Near-Unity Photoluminescence Quantum Yield and Suppressed Blinking.

PubMed

Jeong, Byeong Guk; Park, Young-Shin; Chang, Jun Hyuk; Cho, Ikjun; Kim, Jai Kyeong; Kim, Heesuk; Char, Kookheon; Cho, Jinhan; Klimov, Victor I; Park, Philip; Lee, Doh C; Bae, Wan Ki

2016-10-02

Thick inorganic shell endows colloidal nanocrystals (NCs) with enhanced photochemical stability and suppression of photoluminescence intermittency (also known as blinking). However, the progress of using thick-shell heterostructure NCs in applications has been limited, due to low photoluminescence quantum yield (PL QY  60%) at room temperature. Here, we demonstrate thick-shell NCs with CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) geometry that exhibit near-unity PL QY at room temperature and suppression of blinking. In SQW NCs, the lattice mismatch is diminished between the emissive CdSe layer and the surrounding CdS layers as a result of coherent strain, which suppresses the formation of misfit defects and consequently permits ~ 100% PL QY for SQW NCs with thick CdS shell (≥ 5 nm). High PL QY of thick-shell SQW NCs are preserved even in concentrated dispersion and in film under thermal stress, which makes them promising candidates for applications in solid-state lightings and luminescent solar concentrators.

Unconventional Electron Pairing and Topological Superconductivity in Proximitized HgTe Quantum Wells

NASA Astrophysics Data System (ADS)

Ren, Hechen; Hart, Sean; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Halperin, Bertrand; Yacoby, Amir

Coupling s-wave superconductors to systems with exotic Fermi surface spin textures has been recently proposed as a way to manipulate the nature of the paired state, in some cases even leading to a topological phase transition. Recently, we studied the behavior of Fraunhofer interference in HgTe quantum well-based Josephson junctions, in the presence of a magnetic field applied in the plane of the quantum well. Here we theoretically analyze our system and compare the predicted behavior to our experimental results. We find that the in-plane magnetic field tunes the momentum of Cooper pairs in the quantum well, directly reflecting the response of the spin-dependent Fermi surfaces. This momentum tuning depends crucially on the type of spin-orbit coupling in the system. In the high electron density regime, the induced superconductivity evolves with electron density in agreement with our model based on the Hamiltonian of Bernevig, Hughes and Zhang. This agreement provides a quantitative value for g/vF, where g is the effective g-factor and vF is the Fermi velocity. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter from singlet to triplet pairing, and in general allows investigation of electronic spin texture at the Fermi surface of materials. NSF DMR-1206016; STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319; NSF GRFP under Grant DGE1144152, Microsoft Corporation Project Q.

Simulation of parabolic reflectors for ultraviolet phototherapy

NASA Astrophysics Data System (ADS)

Grimes, David Robert

2016-08-01

Ultraviolet (UVR) phototherapy is widely used to treat an array of skin conditions, including psoriasis, eczema and vitiligo. For such interventions, a quantified dose is vital if the treatment is to be both biologically effective and to avoid the detrimental effects of over-dosing. As dose is absorbed at surface level, the orientation of patient site with respect to the UVR lamps modulates effective dose. Previous investigations have modelled this behaviour, and examined the impact of shaped anodized aluminium reflectors typically placed around lamps in phototherapy cabins. These mirrors are effective but tend to yield complex patterns of reflection around the cabin which can result in substantial dose inhomogeneity. There has been some speculation over whether using the reflective property of parabolic mirrors might improve dose delivery or homogeneity through the treatment cabin. In this work, the effects of parabolic mirrors are simulated and compared with standard shaped mirrors. Simulation results strongly suggest that parabolic reflectors reduce total irradiance relative to standard shaped reflectors, and have a negligible impact on dose homogeneity.

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

NASA Astrophysics Data System (ADS)

Finke, A.; Ruth, M.; Scholz, S.; Ludwig, A.; Wieck, A. D.; Reuter, D.; Pawlis, A.

2015-01-01

We demonstrate efficient room-temperature photoluminescence and spectral tuning of epitaxially grown ZnSe/CdSe quantum well structures almost over the whole visible spectrum (470-600 nm wavelength). The key element to achieve the observed high quantum efficiency and enormous tuning range was the implementation of a special strain engineering technique, which allows us to suppress substantial lattice relaxation of CdSe on ZnSe. Previous studies indicated that a CdSe coverage exceeding 3 ML on ZnSe results in the formation of extensive lattice defects and complete quenching of the photoluminescence at low and room temperature. In contrast, our approach of strain engineering enables the deposition of planar CdSe quantum wells with a thickness ranging from 1 to 6 ML with excellent optical properties. We attribute the observed experimental features to a controllable strain compensation effect that is present in an alternating system of tensile and compressively strained epitaxial layers and supported this model by calculations of the transition energies of the ZnSe/CdSe quantum wells.

Efficient light collection from crystal scintillators using a compound parabolic concentrator coupled to an avalanche photodiode

NASA Astrophysics Data System (ADS)

Jenke, P. A.; Briggs, M. S.; Bhat, P. N.; Reardon, P.; Connaughton, V.; Wilson-Hodge, C.

2013-09-01

In support of improved gamma-ray detectors for astrophysics and observations of Terrestrial Gamma-ray Flashes (TGFs), we have designed a new approach for the collection and detection of optical photons from scintillators such as Sodium Iodide and Lanthanum Bromide using a light concentrator coupled to an Avalanche photodiode (APD). The APD has many advantages over traditional photomultiplier tubes such as their low power consumption, their compact size, their durability, and their very high quantum efficiency. The difficulty in using these devices in gamma-ray astronomy has been coupling their relatively small active area to the large scintillators necessary for gamma-ray science. Our solution is to use an acrylic Compound Parabolic Concentrator (CPC) to match the large output area of the scintillation crystal to the smaller photodiode. These non-imaging light concentrators exceed the light concentration of focused optics and are light and inexpensive to produce. We present our results from the analysis and testing of such a system including gains in light collecting efficiency, energy resolution of nuclear decay lines, as well as our design for a new, fast TGF detector.

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE PAGES

Wang, Jing; Zhou, Quan; Lian, Biao; ...

2015-08-31

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Zhou, Quan; Lian, Biao

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Parabolic dish test site: History and operating experience

NASA Technical Reports Server (NTRS)

Selcuk, M. K. (Compiler)

1985-01-01

The parabolic dish test site (PDTS) was established for testing point-focusing solar concentrator systems operating at temperatures approaching 1650 C. Among tests run were evaluation and performance characterization of parabolic dish concentrators, receivers, power conversion units, and solar/fossil-fuel hybrid systems. The PDTS was fully operational until its closure in June, 1984. The evolution of the test program, a chronological listing of the experiments run, and data summaries for most of the tests conducted are presented.

A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector

DTIC Science & Technology

2002-01-01

Proc. Vol. 692 © 2002 Materials Research Society H4.2 A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector ...on photon-assisted tunneling (PAT) between the two electron layers in a double quantum well (DQW) heterostructure, will be explained. The detector is...the frequency and strength of that radiation. The THz detector discussed in this paper makes use of photon- assisted tunnelling (PAT) between multiple

Fabrication of parabolic cylindrical microlens array by shaped femtosecond laser

NASA Astrophysics Data System (ADS)

Luo, Zhi; Yin, Kai; Dong, Xinran; Duan, Ji'an

2018-04-01

A simple and efficient technique for fabricating parabolic cylindrical microlens arrays (CMLAs) on the surface of fused silica by shaped femtosecond (fs) laser direct-writing is demonstrated. By means of spatially shaping of a Gaussian fs laser beam to a Bessel distribution, an inversed cylindrical shape laser intensity profile is formed in a specific cross-sectional plane among the shaped optical field. Applying it to experiments, large area close-packed parabolic CMLAs with line-width of 37.5 μm and array size of about 5 × 5 mm are produced. The cross-sectional outline of obtained lenslets has a satisfied parabolic profile and the numerical aperture (NA) of lenslets is more than 0.35. Furthermore, the focusing performance of the fabricated CMLA is also tested in this work and it has been demonstrated that the focusing power of the CMLA with a parabolic profile is better than that with a semi-circular one.

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Aggregation-induced emission in lamellar solids of colloidal perovskite quantum wells

PubMed Central

Jagielski, Jakub; Kumar, Sudhir; Wang, Mingchao; Scullion, Declan; Lawrence, Robert; Li, Yen-Ting; Yakunin, Sergii; Tian, Tian; Kovalenko, Maksym V.; Chiu, Yu-Cheng; Santos, Elton J. G.; Lin, Shangchao; Shih, Chih-Jen

2017-01-01

The outstanding excitonic properties, including photoluminescence quantum yield (ηPL), of individual, quantum-confined semiconductor nanoparticles are often significantly quenched upon aggregation, representing the main obstacle toward scalable photonic devices. We report aggregation-induced emission phenomena in lamellar solids containing layer-controlled colloidal quantum wells (QWs) of hybrid organic-inorganic lead bromide perovskites, resulting in anomalously high solid-state ηPL of up to 94%. Upon forming the QW solids, we observe an inverse correlation between exciton lifetime and ηPL, distinct from that in typical quantum dot solid systems. Our multiscale theoretical analysis reveals that, in a lamellar solid, the collective motion of the surface organic cations is more restricted to orient along the [100] direction, thereby inducing a more direct bandgap that facilitates radiative recombination. Using the QW solids, we demonstrate ultrapure green emission by completely downconverting a blue gallium nitride light-emitting diode at room temperature, with a luminous efficacy higher than 90 lumen W−1 at 5000 cd m−2, which has never been reached in any nanomaterial assemblies by far. PMID:29282451

Strained layer InP/InGaAs quantum well laser

NASA Technical Reports Server (NTRS)

Forouhar, Siamak (Inventor); Larsson, Anders G. (Inventor); Ksendzov, Alexander (Inventor); Lang, Robert J. (Inventor)

1993-01-01

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Parabolic tapers for overmoded waveguides

DOEpatents

Doane, J.L.

1983-11-25

A waveguide taper with a parabolic profile, in which the distance along the taper axis varies as the square of the tapered dimension, provides less mode conversion than equal length linear tapers and is easier to fabricate than other non-linear tapers.

Orthostatic intolerance and motion sickness after parabolic flight

NASA Technical Reports Server (NTRS)

Schlegel, T. T.; Brown, T. E.; Wood, S. J.; Benavides, E. W.; Bondar, R. L.; Stein, F.; Moradshahi, P.; Harm, D. L.; Fritsch-Yelle, J. M.; Low, P. A.

2001-01-01

Because it is not clear that the induction of orthostatic intolerance in returning astronauts always requires prolonged exposure to microgravity, we investigated orthostatic tolerance and autonomic cardiovascular function in 16 healthy subjects before and after the brief micro- and hypergravity of parabolic flight. Concomitantly, we investigated the effect of parabolic flight-induced vomiting on orthostatic tolerance, R-wave-R-wave interval and arterial pressure power spectra, and carotid-cardiac baroreflex and Valsalva responses. After parabolic flight 1) 8 of 16 subjects could not tolerate 30 min of upright tilt (compared to 2 of 16 before flight); 2) 6 of 16 subjects vomited; 3) new intolerance to upright tilt was associated with exaggerated falls in total peripheral resistance, whereas vomiting was associated with increased R-wave-R-wave interval variability and carotid-cardiac baroreflex responsiveness; and 4) the proximate mode of new orthostatic failure differed in subjects who did and did not vomit, with vomiters experiencing comparatively isolated upright hypocapnia and cerebral vasoconstriction and nonvomiters experiencing signs and symptoms reminiscent of the clinical postural tachycardia syndrome. Results suggest, first, that syndromes of orthostatic intolerance resembling those developing after space flight can develop after a brief (i.e., 2-h) parabolic flight and, second, that recent vomiting can influence the results of tests of autonomic cardiovascular function commonly utilized in returning astronauts.

Lifetime broadening in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kucharska, A.I.; Robbins, D.J.

1990-03-01

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers show that spectral broadening should be included in any realistic model of laser performance. The authors describe a model of the lifetime broadening due to intraband Auger processes of the Landsberg type and develop it for the case of electron-electron scattering in a 2-D system. They apply the model to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and compare their results with those obtained using both a fixed intraband scattering time and one that varies as {ital n}{sup 1/2},more » where {ital n} is the volume injected carrier density.« less

Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peres, M. L.; Monteiro, H. S.; Castro, S. de

2014-03-07

The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy Δ{sub so}. The values of Δ{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

Mechatronic Prototype of Parabolic Solar Tracker

PubMed Central

Morón, Carlos; Díaz, Jorge Pablo; Ferrández, Daniel; Ramos, Mari Paz

2016-01-01

In the last 30 years numerous attempts have been made to improve the efficiency of the parabolic collectors in the electric power production, although most of the studies have focused on the industrial production of thermoelectric power. This research focuses on the application of this concentrating solar thermal power in the unexplored field of building construction. To that end, a mechatronic prototype of a hybrid paraboloidal and cylindrical-parabolic tracker based on the Arduido technology has been designed. The prototype is able to measure meteorological data autonomously in order to quantify the energy potential of any location. In this way, it is possible to reliably model real commercial equipment behavior before its deployment in buildings and single family houses. PMID:27314359

IR Spectrometer Using 90-degree Off-axis Parabolic Mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robert M. Malone, Richard, G. Hacking, Ian J. McKenna, and Daniel H. Dolan

2008-09-02

A gated spectrometer has been designed for real-time, pulsed infrared (IR) studies at the National Synchrotron Light ource at the Brookhaven National Laboratory. A pair of 90-degree, off-axis parabolic mirrors are used to relay the light from an entrance slit to an output IR recording camera. With an initial wavelength range of 1500–4500 nm required, gratings could not be used in the spectrometer because grating orders would overlap. A magnesium oxide prism, placed between these parabolic mirrors, serves as the dispersion element. The spectrometer is doubly telecentric. With proper choice of the air spacing between the prism and the secondmore » parabolic mirror, any spectral region of interest within the InSb camera array’s sensitivity region can be recorded. The wavelengths leaving the second parabolic mirror are collimated, thereby relaxing the camera positioning tolerance. To set up the instrument, two different wavelength (visible) lasers are introduced at the entrance slit and made collinear with the optical axis via flip mirrors. After dispersion by the prism, these two laser beams are directed to tick marks located on the outside housing of the gated IR camera. This provides first-order wavelength calibration for the instrument. Light that is reflected off the front prism face is coupled into a high-speed detector to verify steady radiance during the gated spectral imaging. Alignment features include tick marks on the prism and parabolic mirrors. This instrument was designed to complement singlepoint pyrometry, which provides continuous time histories of a small collection of spots from shock-heated targets.« less

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

NASA Astrophysics Data System (ADS)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

2015-01-19

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

Spin structure of electron subbands in (110)-grown quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nestoklon, M. O.; Tarasenko, S. A.; Jancu, J.-M.

We present the theory of fine structure of electron states in symmetric and asymmetric zinc-blende-type quantum wells with the (110) crystallographic orientation. By combining the symmetry analysis, sp{sup 3}d{sup 5}s* tight-binding method, and envelope-function approach we obtain quantitative description of in-plane wave vector, well width and applied electric field dependencies of the zero-magnetic-field spin splitting of electron subbands and extract spin-orbit-coupling parameters.

1.9 THz Quantum-cascade Lasers with One-well Injector

NASA Technical Reports Server (NTRS)

Kumar, Sushil; Williams, Benjamin S.; Hu, Qing; Reno, John L.

2006-01-01

We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (lambda approx. equal to 161 micrometers, planck's constant omega approx. equal to 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was approx. 140 A per square centimeters.

Concentrating Solar Power Projects - Delingha 50MW Thermal Oil Parabolic

Science.gov Websites

Trough project | Concentrating Solar Power | NREL Delingha 50MW Thermal Oil Parabolic Trough project Status Date: April 17, 2017 Project Overview Project Name: Delingha 50MW Thermal Oil Parabolic Contractor: IDOM : Thermal energy storage system engineering Plant Configuration Solar Field # of Loops: 190

Concentrating Solar Power Projects - Gulang 100MW Thermal Oil Parabolic

Science.gov Websites

Trough project | Concentrating Solar Power | NREL Gulang 100MW Thermal Oil Parabolic Trough project Status Date: September 29, 2016 Project Overview Project Name: Gulang 100MW Thermal Oil Parabolic ): Webmaster Solar Participants Developer(s): Changzhou Royal Tech Solar Thermal Equipment Co., Ltd. Owner(s

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

DOE PAGES

Albo, Asaf; Flores, Yuri V.; Hu, Qing; ...

2017-09-11

The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albo, Asaf; Flores, Yuri V.; Hu, Qing

The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

2018-03-01

High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

Simulation and optimization of deep violet InGaN double quantum well laser

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.

2012-03-01

The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.

III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

NASA Astrophysics Data System (ADS)

Chiu, YenTing

This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

Low Sidelobe Scanning Beams for Parabolic Reflectors,

DTIC Science & Technology

Parabolic antennas, *Sidelobes, *Electronic scanners, Parabolas, Far field, Antenna feeds , Reflectors, Low level, Amplitude, Distortion, Configurations, Secondary, Compensation, Feeding , Symposia, Taper

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

PubMed Central

Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

2017-01-01

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

Terahertz detection using double quantum well devices

NASA Astrophysics Data System (ADS)

Khodier, Majid; Christodoulou, Christos G.; Simmons, Jerry A.

2001-12-01

This paper discusses the principle of operation of an electrically tunable THz detector, working around 2.54 THz, integrated with a bowtie antenna. The detection is based on the idea of photon-assisted tunneling (PAT) in a double quantum well (DQW) device. The bowtie antenna is used to collect the THz radiation and feed it to the detector for processing. The Bowtie antenna geometry is integrated with the DQW device to achieve broadband characteristic, easy design, and compatibility with the detector fabrication process. The principle of operation of the detector is introduced first. Then, results of different bowtie antenna layouts are presented and discussed.

Boundary conditions and transmission reflection of electron spin in a quantum well

NASA Astrophysics Data System (ADS)

Dargys, A.

2012-04-01

Boundary conditions for a spinor at the interface of hetero- and homobarrier in the presence of spin-orbit interaction are briefly reviewed and generalized. Then they are applied to 2D electron in the presence of a discontinuity of physical parameters in a quantum well. It is shown that in general case under oblique electron incidence, the problem can be solved analytically and the Fresnel-type formulae for polarization can be obtained if, in addition, the Gröbner basis algorithm is addressed to solve the problem. It is observed that the transmitted and reflected spin polarization may strongly depend on values of spin-orbit constants on both sides of the homobarrier in the quantum well.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Couto, O. D. D., E-mail: odilon@ifi.unicamp.br; Almeida, P. T. de; Santos, G. E. dos

We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL)more » measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.« less

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

NASA Technical Reports Server (NTRS)

Nelson, Thomas R., Jr.; Loehr, John P.; Fork, Richard L.; Cole, Spencer; Jones, Darryl K.; Keys, Andrew

1999-01-01

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

2003-01-01

Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

Electrostatically confined quantum rings in bilayer graphene.

PubMed

Zarenia, M; Pereira, J M; Peeters, F M; Farias, G A

2009-12-01

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B(0)) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a B(0) --> -B(0) transformation and, for a fixed total angular momentum index m, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anticrossings, which arise due to the overlap of gate-confined and magnetically confined states.

Ka-Band Parabolic Deployable Antenna (KaPDA) Enabling High Speed Data Communication for CubeSats

NASA Technical Reports Server (NTRS)

Sauder, Jonathan F.; Chahat, Nacer; Hodges, Richard; Thomson, Mark W.; Rahmat-Samii, Yahya

2015-01-01

CubeSats are at a very exciting point as their mission capabilities and launch opportunities are increasing. But as instruments become more advanced and operational distances between CubeSats and earth increase communication data rate becomes a mission-limiting factor. Improving data rate has become critical enough for NASA to sponsor the Cube Quest Centennial Challenge when: one of the key metrics is transmitting as much data as possible from the moon and beyond Currently, many CubeSats communicate on UHF bands and those that have high data rate abilities use S-band or X-band patch antennas. The CubeSat Aneas, which was launched in September 2012, pushed the envelope with a half-meter S-band dish which could achieve 100x the data rate of patch antennas. A half-meter parabolic antenna operating at Ka-band would increase data rates by over 100x that of the AMOS antenM and 10,000 that of X-band patch antennas.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Parabolic replicator dynamics and the principle of minimum Tsallis information gain

PubMed Central

2013-01-01

Background Non-linear, parabolic (sub-exponential) and hyperbolic (super-exponential) models of prebiological evolution of molecular replicators have been proposed and extensively studied. The parabolic models appear to be the most realistic approximations of real-life replicator systems due primarily to product inhibition. Unlike the more traditional exponential models, the distribution of individual frequencies in an evolving parabolic population is not described by the Maximum Entropy (MaxEnt) Principle in its traditional form, whereby the distribution with the maximum Shannon entropy is chosen among all the distributions that are possible under the given constraints. We sought to identify a more general form of the MaxEnt principle that would be applicable to parabolic growth. Results We consider a model of a population that reproduces according to the parabolic growth law and show that the frequencies of individuals in the population minimize the Tsallis relative entropy (non-additive information gain) at each time moment. Next, we consider a model of a parabolically growing population that maintains a constant total size and provide an “implicit” solution for this system. We show that in this case, the frequencies of the individuals in the population also minimize the Tsallis information gain at each moment of the ‘internal time” of the population. Conclusions The results of this analysis show that the general MaxEnt principle is the underlying law for the evolution of a broad class of replicator systems including not only exponential but also parabolic and hyperbolic systems. The choice of the appropriate entropy (information) function depends on the growth dynamics of a particular class of systems. The Tsallis entropy is non-additive for independent subsystems, i.e. the information on the subsystems is insufficient to describe the system as a whole. In the context of prebiotic evolution, this “non-reductionist” nature of parabolic replicator

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-06-20

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

Quantum anomalous Hall phase and half-metallic phase in ferromagnetic (111) bilayers of 4 d and 5 d transition metal perovskites

NASA Astrophysics Data System (ADS)

Chandra, Hirak Kumar; Guo, Guang-Yu

2017-04-01

Extraordinary electronic phases can form in artificial oxide heterostructures, which will provide a fertile ground for new physics and also give rise to novel device functions. Based on a systematic first-principles density functional theory study of the magnetic and electronic properties of the (111) superlattices (ABO3) 2/(AB'O3)10 of 4 d and 5 d transition metal perovskite (B = Ru, Rh, Ag, Re, Os, Ir, Au; AB'O3=LaAlO3 , SrTiO3) , we demonstrate that due to quantum confinement, bilayers (LaBO3)2 (B = Ru, Re, Os) and (SrBO3)2 (B = Rh, Os, Ir) are ferromagnetic with ordering temperatures up to room temperature. In particular, bilayer (LaOsO3)2 is an exotic spin-polarized quantum anomalous Hall insulator, while the other ferromagnetic bilayers are metallic with large Hall conductances comparable to the conductance quantum. Furthermore, bilayers (LaRuO3)2 and (SrRhO3)2 are half metallic, while the bilayer (SrIrO3)2 exhibits a peculiar colossal magnetic anisotropy. Our findings thus show that 4 d and 5 d metal perovskite (111) bilayers are a class of quasi-two-dimensional materials for exploring exotic quantum phases and also for advanced applications such as low-power nanoelectronics and oxide spintronics.

Prolonging Microgravity on Parabolic Airplane Flights

NASA Technical Reports Server (NTRS)

Robinson, David W.

2003-01-01

Three techniques have been proposed to prolong the intervals of time available for microgravity experiments aboard airplanes flown along parabolic trajectories. Typically, a pilot strives to keep an airplane on such a trajectory during a nominal time interval as long as 25 seconds, and an experimental apparatus is released to float freely in the airplane cabin to take advantage of the microgravitational environment of the trajectory for as long as possible. It is usually not possible to maintain effective microgravity during the entire nominal time interval because random aerodynamic forces and fluctuations in pilot control inputs cause the airplane to deviate slightly from a perfect parabolic trajectory, such that the freely floating apparatus bumps into the ceiling, floor, or a wall of the airplane before the completion of the parabola.

Simultaneous effects of pressure and temperature on donor binding energy in Pöschl-Teller quantum well

NASA Astrophysics Data System (ADS)

Hakimyfard, Alireza; Barseghyan, M. G.; Duque, C. A.; Kirakosyan, A. A.

2009-12-01

In the frame of the variational method and the effective-mass approximation, the effects of hydrostatic pressure and temperature on the binding energy for donor impurities in the Pöschl-Teller quantum well are studied. The binding energy dependencies on the width of the quantum well, the hydrostatic pressure, the impurity position, the temperature, and the parameters of the confining potential are reported. The results show that the binding energy increases (decreases) with the increasing of the hydrostatic pressure (temperature). It is also found that, associated with the symmetry breaking in the Pöschl-Teller quantum well, and depending on the impurity position, the binding energy can increase or decrease.

Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers

NASA Astrophysics Data System (ADS)

Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Belenky, Gregory

2018-02-01

Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched 5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section ( 300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sun, Jason N.; Choi, Kwong-Kit; Olver, Kimberley A.; Fu, Richard X.

2017-05-01

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum

Use of a Parabolic Microphone to Detect Hidden Subjects in Search and Rescue.

PubMed

Bowditch, Nathaniel L; Searing, Stanley K; Thomas, Jeffrey A; Thompson, Peggy K; Tubis, Jacqueline N; Bowditch, Sylvia P

2018-03-01

This study compares a parabolic microphone to unaided hearing in detecting and comprehending hidden callers at ranges of 322 to 2510 m. Eight subjects were placed 322 to 2510 m away from a central listening point. The subjects were concealed, and their calling volume was calibrated. In random order, subjects were asked to call the name of a state for 5 minutes. Listeners with parabolic microphones and others with unaided hearing recorded the direction of the call (detection) and name of the state (comprehension). The parabolic microphone was superior to unaided hearing in both detecting subjects and comprehending their calls, with an effect size (Cohen's d) of 1.58 for detection and 1.55 for comprehension. For each of the 8 hidden subjects, there were 24 detection attempts with the parabolic microphone and 54 to 60 attempts by unaided listeners. At the longer distances (1529-2510 m), the parabolic microphone was better at detecting callers (83% vs 51%; P<0.00001 by χ 2 ) and comprehension (57% vs 12%; P<0.00001). At the shorter distances (322-1190 m), the parabolic microphone offered advantages in detection (100% vs 83%; P=0.000023) and comprehension (86% vs 51%; P<0.00001), although not as pronounced as at the longer distances. Use of a 66-cm (26-inch) parabolic microphone significantly improved detection and comprehension of hidden calling subjects at distances between 322 and 2510 m when compared with unaided hearing. This study supports the use of a parabolic microphone in search and rescue to locate responsive subjects in favorable weather and terrain. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org; Brown, E. R.

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

Ionization of deep quantum wells: Optical trampoline effect

NASA Astrophysics Data System (ADS)

Perlin, E. Yu.; Levitskiĭ, R. S.

2007-02-01

A new mechanism of transitions of an electronic system from the ground state to states with excitation energies exceeding many times the energy of a light photon initiating the transitions has been considered. This mechanism is based on the so-called optical “trampoline” effect: one of the interacting electrons receives energy from another electron and, simultaneously absorbing a photon ħω, overcomes the energy gap significantly exceeding ħω. Ionization of deep quantum wells by low-frequency light of moderate intensity due to the optical trampoline effect was calculated.

Asymmetric quantum well broadband thyristor laser

NASA Astrophysics Data System (ADS)

Liu, Zhen; Wang, Jiaqi; Yu, Hongyan; Zhou, Xuliang; Chen, Weixi; Li, Zhaosong; Wang, Wei; Ding, Ying; Pan, Jiaoqing

2017-11-01

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry-Perot (FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ-10 dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.

Magnetophonon resonance in double quantum wells

NASA Astrophysics Data System (ADS)

Ploch, D.; Sheregii, E. M.; Marchewka, M.; Wozny, M.; Tomaka, G.

2009-05-01

The experimental results obtained for the magnetotransport in pulsed magnetic fields in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells and different values of the electron density are reported. The magnetophonon resonance (MPR) was observed for both types of structures within the temperature range 77-125 K. Four kinds of LO phonons are taken into account to interpret the MPR oscillations in the DQW and a method of the Landau level calculation in the DQW is elaborated for this aim. The peculiarity of the MPR in the DQW is the large number of the Landau levels caused by SAS splitting of the electron states (splitting on the symmetric and anti-symmetric states) and the large number of the phonon assistance electron transitions between Landau levels. The significant role of the carrier statistics is shown too. The behavior of the electron states in the DQWs at comparably high temperatures has been studied using the MPR. It is shown that the Huang and Manasreh [Manasreh [Phys. Rev. B 54, 2044 (1996)] model involving screening of exchange interaction is confirmed.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

NASA Astrophysics Data System (ADS)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors

NASA Astrophysics Data System (ADS)

Wissmar, S. G. E.; Radamsson, H. H.; Yamamoto, Y.; Tillack, B.; Vieider, C.; Andersson, J. Y.

2008-03-01

We demonstrate a novel single-crystalline high-performance thermistor material based on SiGe quantum well heterostructures. The SiGe/Si quantum wells are grown epitaxially on standard Si [001] substrates. Holes are used as charge carriers utilizing the discontinuities in the valence band structure. By optimizing design parameters such as the barrier height (by variation of the germanium content) and the fermi level Ef (by variation of the quantum well width and doping level) of the material, the layer structure can be tailored. Then a very high temperature coefficient of resistivity (TCR) can be obtained which is superior to the previous reported conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio as well as well defined and uniform material properties. High-resolution X-ray diffraction was applied to characterize the thickness and Ge content of QWs. The results show sharp oscillations indicating an almost ideal super lattice with negligible relaxation and low defect density. The impact of growth temperature on the thermistor material properties was characterized by analyzing how the resulting strain primarily affects the performance of the TCR and 1/f noise. Results illustrate a value of 3.3 %/K for TCR with a low 1/f noise.

Studies of quantum dots in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Goldmann, Eyal

We present two studies of quantum dots in the quantum Hall regime. In the first study, presented in Chapter 3, we investigate the edge reconstruction phenomenon believed to occur when the quantum dot filling fraction is n≲1 . Our approach involves the examination of large dots (≤40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wavefunctions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction. In the second study, presented in Chapter 4, we investigate quantum dots in the fractional quantum Hall regime using a Hartree formulation of composite fermion theory. We find that under appropriate conditions, the chemical potential of the dots oscillates periodically with B due to the transfer of composite fermions between quasi-Landau bands. This effect is analogous the addition spectrum oscillations which occur in quantum dots in the integer quantum Hall regime. Period f0 oscillations are found in sharply confined dots with filling factors nu = 2/5 and nu = 2/3. Period 3 f0 oscillations are found in a parabolically confined nu = 2/5 dot. More generally, we argue that the oscillation period of dots with band pinning should vary continuously with B, whereas the period of dots without band pinning is f0 .

Probing the excited subband dispersion of holes confined to GaAs wide quantum wells

NASA Astrophysics Data System (ADS)

Jo, Insun; Liu, Yang; Deng, H.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.

Owing to the strong spin-orbit coupling and their large effective mass, the two-dimensional (2D) holes in modulation-doped GaAs quantum wells provide a fertile test bed to study the rich physics of low-dimensional systems. In a wide quantum well, even at moderate 2D densities, the holes start to occupy the excited subband, a subband whose dispersion is very unusual and has a non-monotonic dependence on the wave vector. Here, we study a 2D hole system confined to a 40-nm-thick (001) GaAs quantum well and demonstrate that, via the application of both front and back gates, the density can be tuned in a wide range, between ~1 and 2 ×1011 cm-2. Using Fourier analysis of the low-field Shubnikov-de Haas oscillations, we investigate the population of holes and the spin-orbit interaction induced spin-splitting in different subbands. We discuss the results in light of self-consistent quantum calculations of magneto-oscillations. Work support by the DOE BES (DE-FG02-00-ER45841), the NSF (Grants DMR-1305691 and MRSEC DMR-1420541), the Gordon and Betty Moore Foundation (Grant GBMF4420), and Keck Foundation for experiments, and the NSF Grant DMR-1310199 for calculations.

Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells

NASA Astrophysics Data System (ADS)

Marchewka, M.; Sheregii, E. M.; Tralle, I.; Ploch, D.; Tomaka, G.; Furdak, M.; Kolek, A.; Stadler, A.; Mleczko, K.; Zak, D.; Strupinski, W.; Jasik, A.; Jakiela, R.

2008-02-01

The experimental results obtained for magnetotransport in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells are reported. A beating effect occurring in the Shubnikov-de Haas (SdH) oscillations was observed for both types of structures at low temperatures in the parallel transport when the magnetic field was perpendicular to the layers. An approach for the calculation of the Landau level energies for DQW structures was developed and then applied to the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to account for the observed magnetotransport phenomena (SdH and integer quantum Hall effect), one should introduce two different quasi-Fermi levels characterizing two electron subsystems regarding the symmetry properties of their states, symmetric and anti-symmetric ones, which are not mixed by electron-electron interaction.

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

PubMed

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

Parabolic flight experience is related to increased release of stress hormones.

PubMed

Schneider, Stefan; Brümmer, Vera; Göbel, Simon; Carnahan, Heather; Dubrowski, Adam; Strüder, Heiko K

2007-06-01

Numerous studies have shown significant effects of weightlessness on adaptational processes of the CNS, cardiovascular and/or muscular system. Most of these studies have been carried out during parabolic flights, using the recurring 20 s of weightlessness at each parabola. Although some of these studies reported on potential influences not only of weightlessness but also of the stressful situation within a parabolic flight, especially provoked by the ongoing changes between 1.8, 1 and 0 G, so far there seems to be only marginal information about objective parameters of stress evoked by parabolic flights. By collecting blood samples from a permanent venous catheter several times during parabolic flights, we were able to show an increase of prolactin, cortisol and ACTH in the course of a 120 min flight. We conclude, therefore, that previous reported effects of weightlessness on adaptational processes may be affected not only by weightlessness but also by the exposure to other stressors experienced within the environment of a Zero-G airbus.

Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

DTIC Science & Technology

2008-01-01

Available online 18 October 2008 PACS: 72.80.Ey 73.61.Ey 81.05.Ea 85.30.Tv Keywords: A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III–V...were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1x. The composition of the...composition in order to control the strain in the GaSb quantum well. The heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi

Temperature independent quantum well FET with delta channel doping

NASA Technical Reports Server (NTRS)

Young, P. G.; Mena, R. A.; Alterovitz, S. A.; Schacham, S. E.; Haugland, E. J.

1992-01-01

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Super-resolution with a positive epsilon multi-quantum-well super-lens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bak, A. O.; Giannini, V.; Maier, S. A.

2013-12-23

We design an anisotropic and dichroic quantum metamaterial that is able to achieve super-resolution without the need for a negative permittivity. When exploring the parameters of the structure, we take into account the limits of semiconductor fabrication technology based on quantum well stacks. By heavily doping the structure with free electrons, we infer an anisotropic effective medium with a prolate ellipsoid dispersion curve which allows for near-diffractionless propagation of light (similar to an epsilon-near-zero hyperbolic lens). This, coupled with low absorption, allows us to resolve images at the sub-wavelength scale at distances 6 times greater than equivalent natural materials.

Molten salt parabolic trough system with synthetic oil preheating

NASA Astrophysics Data System (ADS)

Yuasa, Minoru; Hino, Koichi

2017-06-01

Molten salt parabolic trough system (MSPT), which can heat the heat transfer fluid (HTF) to 550 °C has a better performance than a synthetic oil parabolic trough system (SOPT), which can heat the HTF to 400 °C or less. The utilization of HTF at higher temperature in the parabolic trough system is able to realize the design of a smaller size of storage tank and higher heat to electricity conversion efficiency. However, with MSPT there is a great amount of heat loss at night so it is necessary to circulate the HTF at a high temperature of about 290 °C in order to prevent solidification. A new MSPT concept with SOPT preheating (MSSOPT) has been developed to reduce the heat loss at night. In this paper, the MSSOPT system, its performance by steady state analysis and annual performance analysis are introduced.

Electron-hole asymmetry, Dirac fermions, and quantum magnetoresistance in BaMnBi 2

DOE PAGES

Li, Lijun; Wang, Kefeng; Graf, D.; ...

2016-03-28

Here, we report two-dimensional quantum transport and Dirac fermions in BaMnBi 2 single crystals. BaMnBi 2 is a layered bad metal with highly anisotropic conductivity and magnetic order below 290 K. Magnetotransport properties, nonzero Berry phase, small cyclotron mass, and the first-principles band structure calculations indicate the presence of Dirac fermions in Bi square nets. Quantum oscillations in the Hall channel suggest the presence of both electron and hole pockets, whereas Dirac and parabolic states coexist at the Fermi level.

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

NASA Astrophysics Data System (ADS)

Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

2018-05-01

We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J.; Dawson, P.; Hammersley, S.

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar,more » and is a function, specifically, of carrier density.« less

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng

2011-07-14

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Reflective Properties of a Parabolic Mirror.

ERIC Educational Resources Information Center

Ramsey, Gordon P.

1991-01-01

An incident light ray parallel to the optical axis of a parabolic mirror will be reflected at the focal point and vice versa. Presents a mathematical proof that uses calculus, algebra, and geometry to prove this reflective property. (MDH)

Quasilinear parabolic variational inequalities with multi-valued lower-order terms

NASA Astrophysics Data System (ADS)

Carl, Siegfried; Le, Vy K.

2014-10-01

In this paper, we provide an analytical frame work for the following multi-valued parabolic variational inequality in a cylindrical domain : Find and an such that where is some closed and convex subset, A is a time-dependent quasilinear elliptic operator, and the multi-valued function is assumed to be upper semicontinuous only, so that Clarke's generalized gradient is included as a special case. Thus, parabolic variational-hemivariational inequalities are special cases of the problem considered here. The extension of parabolic variational-hemivariational inequalities to the general class of multi-valued problems considered in this paper is not only of disciplinary interest, but is motivated by the need in applications. The main goals are as follows. First, we provide an existence theory for the above-stated problem under coercivity assumptions. Second, in the noncoercive case, we establish an appropriate sub-supersolution method that allows us to get existence, comparison, and enclosure results. Third, the order structure of the solution set enclosed by sub-supersolutions is revealed. In particular, it is shown that the solution set within the sector of sub-supersolutions is a directed set. As an application, a multi-valued parabolic obstacle problem is treated.

Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.

PubMed

Shchurova, L Yu; Kulbachinskii, V A

2011-03-01

We investigate energy levels, thermodynamic, transport and magnetotransport properties of holes in GaAs structure with quantum well InGaAs delta-doped by C and Mn. We present self-consistent calculations for energy levels in the quantum well for different degrees of ionization of Mn impurity. The magnetoresistance of holes in the quantum well is calculated. We explain observed negative magnetoresistance by the reduction of spin-flip scattering on magnetic ions due to aligning of spins with magnetic field.

Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

NASA Technical Reports Server (NTRS)

Larsson, A.; Maserjian, J.

1991-01-01

Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

ERIC Educational Resources Information Center

Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

2012-01-01

In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

Nonimaging secondary concentrators for large rim angle parabolic troughs with tubular absorbers.

PubMed

Ries, H; Spirkl, W

1996-05-01

For parabolic trough solar collectors with tubular absorbers, we design new tailored secondary concentrators. The design is applicable for any rim angle of a parabolic reflector. With the secondary, the concentration can be increased by a factor of more than 2 with a compact secondary reflector consisting of a single piece, even for the important case of a rim angle of 90 deg. The parabolic reflector can be used without changes; the reduced absorber is still tubular but smaller than the original absorber and slightly displaced toward the primary.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

SEMICONDUCTOR PHYSICS: Properties of the two- and three-dimensional quantum dot qubit

NASA Astrophysics Data System (ADS)

Shihua, Chen

2010-05-01

On the condition of electric-longitudinal-optical (LO) phonon strong coupling in both two- and three-dimensional parabolic quantum dots (QDs), we obtain the eigenenergies of the ground state (GS) and the first excited state (ES), the eigenfunctions of the GS and the first ES by using a variational method of Pekar type. This system in QD may be employed as a quantum system-quantum bit (qubit). When the electron is in the superposition state of the GS and the first ES, we obtain the time evolution of the electron density. The relations of both the electron probability density and the period of oscillation with the electric-LO phonon coupling strength and confinement length are discussed.

Conversion of type of quantum well structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Conversion of Type of Quantum Well Structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Daehwan, E-mail: daehwan.jung@yale.edu; Larry Lee, Minjoo; Yu, Lan

We report room-temperature (RT) electroluminescence (EL) from InAs/InAs{sub x}P{sub 1−x} quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAs{sub x}P{sub 1−x} metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared lasermore » diodes on InAsP/InP.« less

Parabolic dish collectors - A solar option

NASA Astrophysics Data System (ADS)

Truscello, V. C.

1981-05-01

A description is given of several parabolic-dish high temperature solar thermal systems currently undergoing performance trials. A single parabolic dish has the potential for generating 20 to 30 kW of electricity with fluid temperatures from 300 to 1650 C. Each dish is a complete power-producing unit, and may function either independently or as part of a group of linked modules. The two dish designs under consideration are of 11 and 12 meter diameters, yielding receiver operating temperatures of 925 and 815 C, respectively. The receiver designs described include (1) an organic working fluid (toluene) Rankine cycle engine; (2) a Brayton open cycle unit incorporating a hybrid combustion chamber and nozzle and a shaft-coupled permanent magnet alternator; and (3) a modified Stirling cycle device originally designed for automotive use. Also considered are thermal buffer energy storage and thermochemical transport and storage.

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Łepkowski, Sławomir P.; Bardyszewski, Witold

2017-05-01

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells.

PubMed

Łepkowski, Sławomir P; Bardyszewski, Witold

2017-05-17

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

NASA Astrophysics Data System (ADS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-02-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Woodbridge, K.

1985-08-01

GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 A wide symmetrically disposed about the center of a 4000-A-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm/sup -2/. The threshold current increases with increasing N (2

Altered osteoblast structure and function in parabolic flight

NASA Astrophysics Data System (ADS)

Zhong-Quan, Dai; Ying-Hui, Li; Fen, Yang; Bai, Ding; Ying-Jun, Tan

Introduction Bone loss has a significant impact on astronauts during spaceflight being one of the main obstacles preventing interplanetary missions However the exact mechanism is not well understood In the present study we investigated the effects of acute gravitational changes generated by parabolic flight on the structure and function of osteoblasts ROS17 2 8 carried by airbus A300 Methods The alteration of microfilament cytoskeleton was observed by the Texas red conjugated Phalloidin and Alexa Fluor 488 conjugated DNase I immunofluorescence stain ALP activity and expression COL1A1 expression osteocalcin secrete which presenting the osteoblast function were detected by modified calcium and cobalt method RT-PCR and radioimmunity methods respectively Results The changed gravity induced the reorganization of microfilament cytoskeleton of osteoblast After 3 hours parabolic flight F-actin of osteoblast cytoskeleton became more thickness and directivity whereas G-actin reduced and relatively concentrated at the edge of nucleus observed by confocal fluorescence microscopy This phenomenon is identical with structure alternation observed in hypergravity but the osteoblast function decrease The excretion of osteocalcin the activity and mRNA expression of ALP decrease but the COL1A1 expression has no changes These results were similar to the changes in simulated or real microgravity Conclusion Above results suggest that short time gravity alternative change induce osteoblast structure and function

Modeling Pulse Transmission in the Monterey Bay Using Parabolic Equation Methods

DTIC Science & Technology

1991-12-01

Collins 9-13 was chosen for this purpose due its energy conservation scheme , and its ability to efficiently incorporate higher order terms in its...pressure field generated by the PE model into normal modes. Additionally, this process provides increased physical understanding of mode coupling and...separation of variables (i.e. normal modes or fast field), as well as pure numerical schemes such as the parabolic equation methods, can be used. However, as

Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

NASA Astrophysics Data System (ADS)

Wu, C. H.; Zory, P. S.; Emanuel, M. A.

1994-12-01

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

Excitonic condensation with different pairing symmetries in double quantum wells

NASA Astrophysics Data System (ADS)

Jamell, Christopher

2009-03-01

Double quantum wells with one containing electrons and the other containing holes as carriers are a promising candidate for condensation of dipolar excitons with lifetime much larger than lifetime of excitons in bulk semiconductors. When the inter-well distance is comparable to the interparticle distance within a single well, d <=rsaB, inter-well coherence is expected to lead to an excitonic condensation. We explore the ground state of a balanced system as a function of inter-well distance d and the carrier density n2D. We present Hartree-Fock mean-field results for the quasiparticle and order parameter dispersion with different pairing symmetries. We obtain the quasiparticle density of states in each case. These results lay the ground work for mean-field study of excitonic condensate states with spontaneously broken translational symmetry.

Chaotic motion of comets in near-parabolic orbit: Mapping aproaches

NASA Astrophysics Data System (ADS)

Liu, Jie; Sun, Yi-Sui

1994-09-01

There exist many comets with near-parabolic orbits in the solar system. Among various theories proposed to explain their origin, the Oort cloud hypothesis seems to be the most reasonable. The theory assumes that there is a cometary cloud at a distance 103 to 107 from the sun and that perturbing forces from planets or stars make orbits of some of these comets become the near-parabolic type. Concerning the evolution of these orbits under planetary perturbations, we can raise the question: Will they stay in the solar system forever or will they escape from it? This is an attractive dynamical problem. If we go ahead by directly solving the dynamical differential equations, we may encounter the difficulty of long-time computation. For the orbits of these comets are near-parabolic and their periods are too long to study on their long-term evolution. With mapping approaches the difficulty will be overcome. In another aspect, the study of this model has special meaning for chaotic dynamics. We know that in the neighborhood of any separatrix i.e. the trajectory with zero frequency of the uperturbed motion of a Hamiltonian system, some chaotic motions have to be expected. Actually, the simplest example of separatrix is the parabolic trajectory of the two-body problem which separates the bounded and unbounded motion. From this point of view, the dynamical study of near-parabolic motion is very important. Petrosky's elegant but more abstract deduction gives a Kepler mapping which describes the dynamics of the cometary motion. In this paper we derive a similar mapping directly and discuss its dynamical characters.

The dynamics of parabolic flight: flight characteristics and passenger percepts.

PubMed

Karmali, Faisal; Shelhamer, Mark

2008-09-01

Flying a parabolic trajectory in an aircraft is one of the few ways to create freefall on Earth, which is important for astronaut training and scientific research. Here we review the physics underlying parabolic flight, explain the resulting flight dynamics, and describe several counterintuitive findings, which we corroborate using experimental data. Typically, the aircraft flies parabolic arcs that produce approximately 25 seconds of freefall (0 g) followed by 40 seconds of enhanced force (1.8 g), repeated 30-60 times. Although passengers perceive gravity to be zero, in actuality acceleration, and not gravity, has changed, and thus we caution against the terms "microgravity" and "zero gravity. " Despite the aircraft trajectory including large (45°) pitch-up and pitch-down attitudes, the occupants experience a net force perpendicular to the floor of the aircraft. This is because the aircraft generates appropriate lift and thrust to produce the desired vertical and longitudinal accelerations, respectively, although we measured moderate (0.2 g) aft-ward accelerations during certain parts of these trajectories. Aircraft pitch rotation (average 3°/s) is barely detectable by the vestibular system, but could influence some physics experiments. Investigators should consider such details in the planning, analysis, and interpretation of parabolic-flight experiments.

The dynamics of parabolic flight: flight characteristics and passenger percepts

PubMed Central

Karmali, Faisal; Shelhamer, Mark

2008-01-01

Flying a parabolic trajectory in an aircraft is one of the few ways to create freefall on Earth, which is important for astronaut training and scientific research. Here we review the physics underlying parabolic flight, explain the resulting flight dynamics, and describe several counterintuitive findings, which we corroborate using experimental data. Typically, the aircraft flies parabolic arcs that produce approximately 25 seconds of freefall (0 g) followed by 40 seconds of enhanced force (1.8 g), repeated 30–60 times. Although passengers perceive gravity to be zero, in actuality acceleration, and not gravity, has changed, and thus we caution against the terms "microgravity" and "zero gravity. " Despite the aircraft trajectory including large (45°) pitch-up and pitch-down attitudes, the occupants experience a net force perpendicular to the floor of the aircraft. This is because the aircraft generates appropriate lift and thrust to produce the desired vertical and longitudinal accelerations, respectively, although we measured moderate (0.2 g) aft-ward accelerations during certain parts of these trajectories. Aircraft pitch rotation (average 3°/s) is barely detectable by the vestibular system, but could influence some physics experiments. Investigators should consider such details in the planning, analysis, and interpretation of parabolic-flight experiments. PMID:19727328

Quantum steganography and quantum error-correction

NASA Astrophysics Data System (ADS)

Shaw, Bilal A.

corrects an arbitrary error on the receiver's half of the ebit as well. We prove that this code is the smallest code with a CSS structure that uses only one ebit and corrects an arbitrary single-qubit error on the sender's side. We discuss the advantages and disadvantages for each of the two codes. In the second half of this thesis we explore the yet uncharted and relatively undiscovered area of quantum steganography. Steganography is the process of hiding secret information by embedding it in an "innocent" message. We present protocols for hiding quantum information in a codeword of a quantum error-correcting code passing through a channel. Using either a shared classical secret key or shared entanglement Alice disguises her information as errors in the channel. Bob can retrieve the hidden information, but an eavesdropper (Eve) with the power to monitor the channel, but without the secret key, cannot distinguish the message from channel noise. We analyze how difficult it is for Eve to detect the presence of secret messages, and estimate rates of steganographic communication and secret key consumption for certain protocols. We also provide an example of how Alice hides quantum information in the perfect code when the underlying channel between Bob and her is the depolarizing channel. Using this scheme Alice can hide up to four stego-qubits.

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naquin, Clint; Lee, Mark; Edwards, Hal

2014-11-24

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility ofmore » exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.« less

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Exciton binding energy in a pyramidal quantum dot

NASA Astrophysics Data System (ADS)

Anitha, A.; Arulmozhi, M.

2018-05-01

The effects of spatially dependent effective mass, non-parabolicity of the conduction band and dielectric screening function on exciton binding energy in a pyramid-shaped quantum dot of GaAs have been investigated by variational method as a function of base width of the pyramid. We have assumed that the pyramid has a square base with area a× a and height of the pyramid H=a/2. The trial wave function of the exciton has been chosen according to the even mirror boundary condition, i.e. the wave function of the exciton at the boundary could be non-zero. The results show that (i) the non-parabolicity of the conduction band affects the light hole (lh) and heavy hole (hh) excitons to be more bound than that with parabolicity of the conduction band, (ii) the dielectric screening function (DSF) affects the lh and hh excitons to be more bound than that without the DSF and (iii) the spatially dependent effective mass (SDEM) affects the lh and hh excitons to be less bound than that without the SDEM. The combined effects of DSF and SDEM on exciton binding energy have also been calculated. The results are compared with those available in the literature.

Hormonal responses of metoclopramide-treated subjects experiencing nausea or emesis during parabolic flight

NASA Technical Reports Server (NTRS)

Kohl, Randall L.

1987-01-01

The concentrations of adrenocorticotropic hormone (ACTH), vasopressin (AVP), epinephrine (EPI), and norepinephrine (NE) in 22 subjects administered 10 to 20 mg of metoclopramide prior to parabolic flight are measured. The effect of metoclopramide on motion sickness is examined. It is observed that metoclopramide is ineffective in the modulation of motion sickness due to stressful linear and angular acceleration and orbital flight, and it does not affect serum hormones prior to parabolic flight. It is detected that the serum level of AVP declines following emesis induced by parabolic flight and stressful angular acceleration; the serum levels of ACTH and EPI are elevated by parabolic flight and stressful angular acceleration; and serum NE is significantly elevated immediately following emesis. The possible roles of these hormones in the etiology of space motion sickness are discussed.

Terahertz imaging using photomixers based on quantum well photodetectors

NASA Astrophysics Data System (ADS)

Zhou, T.; Li, H.; Wan, W. J.; Fu, Z. L.; Cao, J. C.

2017-10-01

Due to the fast intersubband transitions, the terahertz (THz) quantum well photodetector (QWP) is supposed to work fast. Recently it has been demonstrated that the THz QWP can detect the THz light modulated at 6.2 GHz and therefore it can be used as a photomixer [H. Li et al., Sci. Rep. 7, 3452 (2017)]. In this work, the authors report a novel active THz imaging using THz QWP photomixers. The THz radiation source used for this imaging application is a multi-mode THz quantum cascade laser (QCL) operating in continuous wave mode. When the fast THz QWP is illuminated by the multi-mode THz radiation, the intermediate frequency signal that is resulted from the frequency beating between the neighbouring THz modes of the QCL can be extracted from the QWP mesa for imaging applications. Employing the technique, the frequency can be down-converted from the THz range to the microwave regime. And therefore, the signal can then be amplified, filtered, and detected using the mature microwave technology.

Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakri, A.; Robert, C.; Pedesseau, L.

We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

NASA Astrophysics Data System (ADS)

Agekyan, V. F.; Akai, I.; Vasil'Ev, N. N.; Karasawa, T.; Karczewski, G.; Serov, A. Yu.; Filosofov, N. G.

2007-06-01

The emission spectra of Zn1-x Mn x Te/Zn0.6Mg0.4Te and Cd1-x Mn x Te/Cd0.5Mg0.5Te quantum-well structures with different manganese concentrations and quantum-well widths are studied at excitation power densities ranging from 105 to 107 W cm-2. Under strong optical pumping, intracenter luminescence of Mn2+ ions degrades as a result of the interaction of excited managanese ions with high-density excitons. This process is accompanied by a strong broadening of the emission band of quantum-well excitons due to the exciton-exciton interaction and saturation of the exciton ground state. Under pumping at a power density of 105 W cm-2, stimulated emission of quantum-well excitons arises in CdTe/Cd0.5Mg0.5Te. The luminescence kinetics of the quantum-well and barrier excitons is investigated with a high temporal resolution. The effect of the quantum-well width and the managanese concentration on the kinetics and band shape of the Mn2+ intracenter luminescence characterized by the contribution of the manganese interface ions is determined.

Strongly nonlinear parabolic variational inequalities.

PubMed

Browder, F E; Brézis, H

1980-02-01

An existence and uniqueness result is established for a general class of variational inequalities for parabolic partial differential equations of the form partial differentialu/ partial differentialt + A(u) + g(u) = f with g nondecreasing but satisfying no growth condition. The proof is based upon a type of compactness result for solutions of variational inequalities that should find a variety of other applications.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podpirka, Adrian A., E-mail: adrian.podpirka.ctr@nrl.navy.mil; Katz, Michael B.; Twigg, Mark E.

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in themore » quantum Hall regime.« less

Solutions to variational inequalities of parabolic type

NASA Astrophysics Data System (ADS)

Zhu, Yuanguo

2006-09-01

The existence of strong solutions to a kind of variational inequality of parabolic type is investigated by the theory of semigroups of linear operators. As an application, an abstract semi permeable media problem is studied.

Localization or tunneling in asymmetric double-well potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Dae-Yup, E-mail: dsong@sunchon.ac.kr

An asymmetric double-well potential is considered, assuming that the wells are parabolic around the minima. The WKB wave function of a given energy is constructed inside the barrier between the wells. By matching the WKB function to the exact wave functions of the parabolic wells on both sides of the barrier, for two almost degenerate states, we find a quantization condition for the energy levels which reproduces the known energy splitting formula between the two states. For the other low-lying non-degenerate states, we show that the eigenfunction should be primarily localized in one of the wells with negligible magnitude inmore » the other. Using Dekker’s method (Dekker, 1987), the present analysis generalizes earlier results for weakly biased double-well potentials to systems with arbitrary asymmetry.« less

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

PubMed

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

Graviresponses of Paramecium biaurelia during parabolic flights.

PubMed

Krause, Martin; Bräucker, Richard; Hemmersbach, Ruth

2006-12-01

The thresholds of graviorientation and gravikinesis in Paramecium biaurelia were investigated during the 5th DLR (German Aerospace Center) parabolic-flight campaign at Bordeaux in June 2003. Parabolic flights are a useful tool for the investigation of swimming behaviour in protists at different accelerations. At normal gravity (1 g) and hypergravity (1 g to 1.8 g), precision of orientation and locomotion rates depend linearly on the applied acceleration as seen in earlier centrifuge experiments. After transition from hypergravity to decreased gravity (minimal residual acceleration of <10(-2) g), graviorientation as well as gravikinesis show a full relaxation with different kinetics. The use of twelve independent cell samples per flight guarantees high data numbers and secures the statistical significance of the obtained data. The relatively slow change of acceleration between periods of microgravity and hypergravity (0.4 g/s) enabled us to determine the thresholds of graviorientation at 0.6 g and of gravikinesis at 0.4 g. The gravity-unrelated propulsion rate of the sample was found to be 874 microm/s, exceeding the locomotion rate of horizontally swimming cells (855 microm/s). The measured thresholds of graviresponses were compared with data obtained from earlier centrifuge experiments on the sounding rocket Maxus-2. Measured thresholds of gravireactions indicate that small energies, close to the thermal noise level, are sufficient for the gravitransduction process. Data from earlier hypergravity experiments demonstrate that mechanosensitive ion channels are functioning over a relative wide range of acceleration. From this, we may speculate that gravireceptor channels derive from mechanoreceptor channels.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

NASA Astrophysics Data System (ADS)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

Parabolic Dish Concentrator (PDC-2) Development

NASA Technical Reports Server (NTRS)

Rafinejad, D.

1984-01-01

The design of the Parabolic Dish Concentrator (PDC-2) is described. The following five subsystems of the concentrator are discussed: (1) reflective surface subsystem, (2) support structure subsystem, (3) foundation, (4) drive subsystem, and (5) electrical and control subsystem. The status of the PDC-2 development project is assessed.

Pressure induced increase of the exciton phonon interaction in ZnO/(ZnMg)O quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jarosz, D.; Suchocki, A.; Kozanecki, A.

2016-03-15

It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field. We performed high-pressure measurements on the single ZnO/(ZnMg)O quantum well. We observed a strong increase of the intensity of the phonon-replicas relative to the zero phonon line. In our opinion this effect is related to pressure induced increase of the strain in quantum structure. As a consequence, an increase of the piezoelectric component of the electric field is observed which leads to an increase of the intensity of the phonon-replicas.

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Maremyanin, K. V.

2017-01-15

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

Optical and structural characterization of InAs/GaAs quantum wells

NASA Technical Reports Server (NTRS)

Ksendzov, A.; George, T.; Grunthaner, F. J.; Liu, J. K.; Rich, D. H.; Terhune, R. W.; Wilson, B. A.; Pollak, F. H.; Huang, Y.-S.

1991-01-01

Three InAs/GaAs single quantum wells of two-, three-, and four-monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine absorption, photoluminescence (PL), photoreflectance, and cathodoluminescence are presented. Using the polarization modulated absorptance technique, we observed two absorption features in our samples at 77 K. On the basis of their polarization properties and comparison with an envelope function calculation, these structures are assigned to transitions between the confined heavy-hole and confined and unconfined electron levels. Photoreflectance spectra of the three-monolayer sample in 77-300 K range show only the fundamental quantum well transition. The temperature dependence of this transition is approximately linear with a slope of 2.2 x 10 exp -4 eV/K, which is significantly lower than in both constituent materials. Comparison to the absorption data reveals that the PL spectra are affected by the carrier diffusion and therefore do not provide direct measure of the exciton density of states. The HRTEM images indicate that, while the interfaces of the two-monolayer sample are smooth and the well thickness is uniform, the four-monolayer sample has uneven interfaces and contains domains of two, three, and four monolayers.

Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

NASA Astrophysics Data System (ADS)

Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

2007-01-01

We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Erol, Ayse; Arikan, M. Cetin; Ergun, Yuksel

2014-11-01

In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector.

A Novel Phase Sensitive Quantum Well Nanostructure Scheme for Controlling Optical Bistability

NASA Astrophysics Data System (ADS)

Raheli, Ali

2018-04-01

A novel four-level lambda-type quantum well (QW) nanostructure is proposed based on phase sensitive optical bistability (OB) and multistability (OM) with a closed-loop configuration. The influence of controlling parameters of the system on OB and OM is investigated. In particular, it is found that the OB behavior is strongly sensitive to the relative phase of applied fields. It is also shown that under certain parametric conditions, the OB can be switched to OM or vice versa. The controllability of OB/OM in such a QW nanostructure may bring some new possibilities for technological applications in solid-state quantum information science and optoelectronics.

Design and resolution analysis of parabolic mirror spectrometer

NASA Astrophysics Data System (ADS)

Wu, Su; Wang, Guodong; Xia, Guo; Sun, Yanchao; Hu, Mingyong

2017-10-01

In order to further eliminate aberration and improve resolution, the paper employs parabolic mirror as the collimating mirror and the focusing mirror to design "Z" configuration and "U" configuration optical structure of parabolic spectrometer with the F number 2.5 and the spectral range varying from 250 nm to 850 nm. We conduct experiments on ZEMAX to simulate and optimize the initial parameters of two structures with the root-mean-square (RMS) radius of spots along Y axis as the optimization goal. Through analyzing the spot diagram and the root-mean-square (RMS) of Y axis, we can see that the "U" configuration spectrometers can achieve much better spectral resolution than the "Z" configuration.

Efficient dispersion tailoring by designing alternately arranged dispersion compensating fibers and fiber amplifiers to create self-similar parabolic pulses

NASA Astrophysics Data System (ADS)

Ghosh, Dipankar; Basu, Mousumi

2010-11-01

The parabolic similariton pulse formation by alternate arrangements of passive and active dispersion compensating fibers (DCFs) is presented here. These combinations of passive and active DCFs with constant core radii and constant nonlinearities are suggested as equivalent profiles of a dispersion tailored fiber amplifier in normal dispersion regime. The dispersion tailored fibers, usually known as dispersion decreasing fibers (DDFs) in normal dispersion regime, are capable of producing linearly chirped parabolic self-similar pulses. The DDF is designed and optimized with proper choice of fiber parameters so that considerable variation of nonlinearity can be achieved, which in turn enhances the effective gain coefficient of the fiber. Inclusion of this nonlinear variation along the DDF amplifier length leads to obtain the simulated output pulses with very small misfit parameters with respect to perfect parabolic pulse at sufficiently reduced optimum length. At the same time to avoid the fabrication difficulties of the DDF, the alternately arranged passive and active DCFs are suggested as suitable alternatives of the DDF. The performances of the cascaded systems for generation of self-similar parabolic pulses are compared with that of the DDF amplifier as well as combined systems consisting of DCFs with equal gain. The results show that the proposed alternately arranged cascaded system with less pumping requirements, are efficient enough to produce similar parabolic pulses as compared to the previously designed DDF, even when considerable amount of splice loss at each joint is included.

On purpose simulation model for molten salt CSP parabolic trough

NASA Astrophysics Data System (ADS)

Caranese, Carlo; Matino, Francesca; Maccari, Augusto

2017-06-01

The utilization of computer codes and simulation software is one of the fundamental aspects for the development of any kind of technology and, in particular, in CSP sector for researchers, energy institutions, EPC and others stakeholders. In that extent, several models for the simulation of CSP plant have been developed with different main objectives (dynamic simulation, productivity analysis, techno economic optimization, etc.), each of which has shown its own validity and suitability. Some of those models have been designed to study several plant configurations taking into account different CSP plant technologies (Parabolic trough, Linear Fresnel, Solar Tower or Dish) and different settings for the heat transfer fluid, the thermal storage systems and for the overall plant operating logic. Due to a lack of direct experience of Molten Salt Parabolic Trough (MSPT) commercial plant operation, most of the simulation tools do not foresee a suitable management of the thermal energy storage logic and of the solar field freeze protection system, but follow standard schemes. ASSALT, Ase Software for SALT csp plants, has been developed to improve MSPT plant's simulations, by exploiting the most correct operational strategies in order to provide more accurate technical and economical results. In particular, ASSALT applies MSPT specific control logics for the electric energy production and delivery strategy as well as the operation modes of the Solar Field in off-normal sunshine condition. With this approach, the estimated plant efficiency is increased and the electricity consumptions required for the plant operation and management is drastically reduced. Here we present a first comparative study on a real case 55 MWe Molten Salt Parabolic Trough CSP plant placed in the Tibetan highlands, using ASSALT and SAM (System Advisor Model), which is a commercially available simulation tool.

IR Spectrometer Using 90-Degree Off-Axis Parabolic Mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robert M. Malone, Ian J. McKenna

2008-03-01

A gated spectrometer has been designed for real-time, pulsed infrared (IR) studies at the National Synchrotron Light Source at the Brookhaven National Laboratory. A pair of 90-degree, off-axis parabolic mirrors are used to relay the light from an entrance slit to an output recording camera. With an initial wavelength range of 1500–4500 nm required, gratings could not be used in the spectrometer because grating orders would overlap. A magnesium oxide prism, placed between these parabolic mirrors, serves as the dispersion element. The spectrometer is doubly telecentric. With proper choice of the air spacing between the prism and the second parabolicmore » mirror, any spectral region of interest within the InSb camera array’s sensitivity region can be recorded. The wavelengths leaving the second parabolic mirror are collimated, thereby relaxing the camera positioning tolerance. To set up the instrument, two different wavelength (visible) lasers are introduced at the entrance slit and made collinear with the optical axis via flip mirrors. After dispersion by the prism, these two laser beams are directed to tick marks located on the outside housing of the gated IR camera. This provides first-order wavelength calibration for the instrument. Light that is reflected off the front prism face is coupled into a high-speed detector to verify steady radiance during the gated spectral imaging. Alignment features include tick marks on the prism and parabolic mirrors. This instrument was designed to complement single-point pyrometry, which provides continuous time histories of a small collection of spots from shock-heated targets.« less

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

NASA Technical Reports Server (NTRS)

Wang, Yang

1994-01-01

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Strongly nonlinear parabolic variational inequalities

PubMed Central

Browder, Felix E.; Brézis, Haim

1980-01-01

An existence and uniqueness result is established for a general class of variational inequalities for parabolic partial differential equations of the form ∂u/∂t + A(u) + g(u) = f with g nondecreasing but satisfying no growth condition. The proof is based upon a type of compactness result for solutions of variational inequalities that should find a variety of other applications. PMID:16592776

Magnetization of InAs parabolic quantum dot: An exact diagonalization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aswathy, K. M., E-mail: aswathykm20@gmail.com; Sanjeev Kumar, D.

2016-04-13

The magnetization of two electron InAs quantum dot has been studied as a function of magnetic field. The electron-electron interaction has been taken into account by using exact diagonalization method numerically. The magnetization at zero external magnetic field is zero and increases in the negative direction. There is also a paramagnetic peak where the energy levels cross from singlet state to triplet state. Finally, the magnetization falls again to even negative values and saturates.

CO 2 water-alternating-gas injection for enhanced oil recovery: Optimal well controls and half-cycle lengths

DOE PAGES

Chen, Bailian; Reynolds, Albert C.

2018-03-11

We report that CO 2 water-alternating-gas (WAG) injection is an enhanced oil recovery method designed to improve sweep efficiency during CO 2 injection with the injected water to control the mobility of CO 2 and to stabilize the gas front. Optimization of CO 2 -WAG injection is widely regarded as a viable technique for controlling the CO 2 and oil miscible process. Poor recovery from CO 2 -WAG injection can be caused by inappropriately designed WAG parameters. In previous study (Chen and Reynolds, 2016), we proposed an algorithm to optimize the well controls which maximize the life-cycle net-present-value (NPV). However,more » the effect of injection half-cycle lengths for each injector on oil recovery or NPV has not been well investigated. In this paper, an optimization framework based on augmented Lagrangian method and the newly developed stochastic-simplex-approximate-gradient (StoSAG) algorithm is proposed to explore the possibility of simultaneous optimization of the WAG half-cycle lengths together with the well controls. Finally, the proposed framework is demonstrated with three reservoir examples.« less

CO 2 water-alternating-gas injection for enhanced oil recovery: Optimal well controls and half-cycle lengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bailian; Reynolds, Albert C.

We report that CO 2 water-alternating-gas (WAG) injection is an enhanced oil recovery method designed to improve sweep efficiency during CO 2 injection with the injected water to control the mobility of CO 2 and to stabilize the gas front. Optimization of CO 2 -WAG injection is widely regarded as a viable technique for controlling the CO 2 and oil miscible process. Poor recovery from CO 2 -WAG injection can be caused by inappropriately designed WAG parameters. In previous study (Chen and Reynolds, 2016), we proposed an algorithm to optimize the well controls which maximize the life-cycle net-present-value (NPV). However,more » the effect of injection half-cycle lengths for each injector on oil recovery or NPV has not been well investigated. In this paper, an optimization framework based on augmented Lagrangian method and the newly developed stochastic-simplex-approximate-gradient (StoSAG) algorithm is proposed to explore the possibility of simultaneous optimization of the WAG half-cycle lengths together with the well controls. Finally, the proposed framework is demonstrated with three reservoir examples.« less

Highlighting the Mechanism of the Quantum Speedup by Time-Symmetric and Relational Quantum Mechanics

NASA Astrophysics Data System (ADS)

Castagnoli, Giuseppe

2016-03-01

Bob hides a ball in one of four drawers. Alice is to locate it. Classically she has to open up to three drawers, quantally just one. The fundamental reason for this quantum speedup is not known. The usual representation of the quantum algorithm is limited to the process of solving the problem. We extend it to the process of setting the problem. The number of the drawer with the ball becomes a unitary transformation of the random outcome of the preparation measurement. This extended, time-symmetric, representation brings in relational quantum mechanics. It is with respect to Bob and any external observer and cannot be with respect to Alice. It would tell her the number of the drawer with the ball before she opens any drawer. To Alice, the projection of the quantum state due to the preparation measurement should be retarded at the end of her search; in the input state of the search, the drawer number is determined to Bob and undetermined to Alice. We show that, mathematically, one can ascribe any part of the selection of the random outcome of the preparation measurement to the final Alice's measurement. Ascribing half of it explains the speedup of the present algorithm. This leaves the input state to Bob unaltered and projects that to Alice on a state of lower entropy where she knows half of the number of the drawer with the ball in advance. The quantum algorithm turns out to be a sum over histories in each of which Alice knows in advance that the ball is in a pair of drawers and locates it by opening one of the two. In the sample of quantum algorithms examined, the part of the random outcome of the initial measurement selected by the final measurement is one half or slightly above it. Conversely, given an oracle problem, the assumption it is one half always corresponds to an existing quantum algorithm and gives the order of magnitude of the number of oracle queries required by the optimal one.

A quantum rings based on multiple quantum wells for 1.2-2.8 THz detection

NASA Astrophysics Data System (ADS)

Mobini, Alireza; Solaimani, M.

2018-07-01

In this paper optical properties of a new QR based on MQWs have been investigated for detection in the THz range. The QR composed of a periodic effective quantum sites that each one considered as QW in theta direction. Using Tight binding method, eigen value problem for a QR with circumstance of 100 nm number with different number of wells i.e. 2, 4, 6 and 8 are solved and the absorption spectrum have been calculated. The results show that absorption has maximum value in range of (1.2-2.88 THz) that can be used for THz detection. Finally, it is realized that by increasing the number of wells, the numbers of absorption line also increase.

Calculation of three dimensional viscous flows in annular cascades using parabolized Navier-Stokes equations

NASA Astrophysics Data System (ADS)

Lawerenz, M.

Numerical algorithms for describing the endwall boundary layers and secondary flows in high turning turbine cascades are described. Partially-parabolic methods which cover three-dimensional viscous flow effects are outlined. Introduction of tip-clearance models and modifications of no-slip conditions without the use of wall functions expand the range of application and improve accuracy. Simultaneous computation of the profile boundary layers by refinement of the mesh size in the circumferential direction makes it possible to describe the boundary layer interaction in the corners formed by the bladings and the endwalls. The partially-parabolic method means that the streamwise elliptic coupling is well represented by the given pressure field and that separation does not occur, but it is not possible to describe the separation of the endwall boundary layer near the leading edge and the horse-shoe vortex there properly.

Pressure Distribution on Inner Wall of Parabolic Nozzle in Laser Propulsion with Single Pulse

NASA Astrophysics Data System (ADS)

Cui, Cunyan; Hong, Yanji; Wen, Ming; Song, Junling; Fang, Juan

2011-11-01

A system based of dynamic pressure sensors was established to study the time resolved pressure distribution on the inner wall of a parabolic nozzle in laser propulsion. Dynamic calibration and static calibration of the test system were made and the results showed that frequency response was up to 412 kHz and linear error was less than 10%. Experimental model was a parabolic nozzle and three test points were preset along one generating line. This study showed that experimental results agreed well with those obtained by numerical calculation way in pressure evolution tendency. The peak value of the calculation was higher than that of the experiment at each tested orifice because of the limitation of the numerical models. The results of this study were very useful for analyzing the energy deposition in laser propulsion and modifying numerical models.

Parabolic northern-hemisphere river flow teleconnections to El Niño-Southern Oscillation and the Arctic Oscillation

NASA Astrophysics Data System (ADS)

Fleming, S. W.; Dahlke, H. E.

2014-10-01

It is almost universally assumed in statistical hydroclimatology that relationships between large-scale climate indices and local-scale hydrometeorological responses, though possibly nonlinear, are monotonic. However, recent work suggests that northern-hemisphere atmospheric teleconnections to El Niño-Southern Oscillation (ENSO) and the Arctic Oscillation can be parabolic. The effect has recently been explicitly confirmed in hydrologic responses, though associations are complicated by land surface characteristics and processes, and investigation of water resource implications has been limited to date. Here, we apply an Akaike Information Criterion-based polynomial selection approach to investigate annual flow volume teleconnections for 42 of the northern hemisphere’s largest ocean-reaching rivers. Though we find a rich diversity of responses, parabolic relationships are formally consistent with the data for almost half the rivers, and the optimal model for eight. These highly nonlinear water supply teleconnections could radically alter the standard conceptual model of how water resources respond to climatic variability. For example, the Sacramento river in drought-ridden California exhibits no significant monotonic ENSO teleconnection but a 0.92 probability of a quadratic relationship, reducing mean predictive error by up to 65% and suggesting greater opportunity for climate index-based water supply forecasts than previously appreciated.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

PubMed Central

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

NASA Technical Reports Server (NTRS)

Sood, Ashok K. (Inventor); Welser, Roger E. (Inventor)

2014-01-01

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Feasibility study of electron transfer quantum well infrared photodetectors for spectral tuning in the long-wave infrared band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jolley, Greg; Dehdashti Akhavan, Nima; Umana-Membreno, Gilberto

An electron transfer quantum well infrared photodetector (QWIP) consisting of repeating units of two coupled quantum wells (QWs) is capable of exhibiting a two color voltage dependent spectral response. However, significant electron transfer between the coupled QWs is required for spectral tuning, which may require the application of relatively high electric fields. Also, the band structure of coupled quantum wells is more complicated in comparison to a regular quantum well and, therefore, it is not always obvious if an electron transfer QWIP can be designed such that it meets specific performance characteristics. This paper presents a feasibility study of themore » electron transfer QWIP and its suitability for spectral tuning. Self consistent calculations have been performed of the bandstructure and the electric field that results from electron population within the quantum wells, from which the optical characteristics have been obtained. The band structure, spectral response, and the resonant final state energy locations have been compared with standard QWIPs. It is shown that spectral tuning in the long-wave infrared band can be achieved over a wide wavelength range of several microns while maintaining a relatively narrow spectral response FWHM. However, the total absorption strength is more limited in comparison to a standard QWIP, since the higher QW doping densities require much higher electric fields for electron transfer.« less

First Middle East Aircraft Parabolic Flights for ISU Participant Experiments

NASA Astrophysics Data System (ADS)

Pletser, Vladimir; Frischauf, Norbert; Cohen, Dan; Foster, Matthew; Spannagel, Ruven; Szeszko, Adam; Laufer, Rene

2017-06-01

Aircraft parabolic flights are widely used throughout the world to create microgravity environment for scientific and technology research, experiment rehearsal for space missions, and for astronaut training before space flights. As part of the Space Studies Program 2016 of the International Space University summer session at the Technion - Israel Institute of Technology, Haifa, Israel, a series of aircraft parabolic flights were organized with a glider in support of departmental activities on `Artificial and Micro-gravity' within the Space Sciences Department. Five flights were organized with manoeuvres including several parabolas with 5 to 6 s of weightlessness, bank turns with acceleration up to 2 g and disorientation inducing manoeuvres. Four demonstration experiments and two experiments proposed by SSP16 participants were performed during the flights by on board operators. This paper reports on the microgravity experiments conducted during these parabolic flights, the first conducted in the Middle East for science and pedagogical experiments.

Photoinduced half-integer quantized conductance plateaus in topological-insulator/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yap, Han Hoe; Zhou, Longwen; Lee, Ching Hua; Gong, Jiangbin

2018-04-01

The past few years have witnessed increased attention to the quest for Majorana-like excitations in the condensed matter community. As a promising candidate in this race, the one-dimensional chiral Majorana edge mode (CMEM) in topological insulator-superconductor heterostructures has gathered renewed interests after an experimental breakthrough [Q. L. He et al., Science 357, 294 (2017), 10.1126/science.aag2792]. In this work, we study computationally the quantum transport of topological insulator-superconductor hybrid devices subject to time-periodic modulation. We report half-integer quantized conductance plateaus at 1/2 e/2h and 3/2 e/2h upon applying the so-called sum rule in the theory of quantum transport in Floquet topological matter. In particular, in a photoinduced topological superconductor sandwiched between two Floquet Chern insulators, it is found that for each Floquet sideband, the CMEM admits equal probability for normal transmission and local Andreev reflection over a wide range of parameter regimes, yielding half-integer quantized plateaus that resist static and time-periodic disorder. While it is well-established that periodic driving fields can simultaneously create and manipulate multiple pairs of Majorana bound states, their detection scheme remains elusive, in part due to their being neutral excitations. Therefore the 3/2 e/2h plateau indicates the possibility to verify the generation of multiple pairs of photoinduced CMEMs via transport measurements. The robust and half-quantized conductance plateaus due to CMEMs are both fascinating and subtle because they only emerge after a summation over contributions from all Floquet sidebands. Our work may add insights into the transport properties of Floquet topological systems and stimulate further studies on the optical control of topological superconductivity.

Frictionless Contact of Multilayered Composite Half Planes Containing Layers With Complex Eigenvalues

NASA Technical Reports Server (NTRS)

Zhang, Wang; Binienda, Wieslaw K.; Pindera, Marek-Jerzy

1997-01-01

A previously developed local-global stiffness matrix methodology for the response of a composite half plane, arbitrarily layered with isotropic, orthotropic or monoclinic plies, to indentation by a rigid parabolic punch is further extended to accommodate the presence of layers with complex eigenvalues (e.g., honeycomb or piezoelectric layers). First, a generalized plane deformation solution for the displacement field in an orthotropic layer or half plane characterized by complex eigenvalues is obtained using Fourier transforms. A local stiffness matrix in the transform domain is subsequently constructed for this class of layers and half planes, which is then assembled into a global stiffness matrix for the entire multilayered half plane by enforcing continuity conditions along the interfaces. Application of the mixed boundary condition on the top surface of the half plane indented by a rigid punch results in an integral equation for the unknown pressure in the contact region. The integral possesses a divergent kernel which is decomposed into Cauchy-type and regular parts using the asymptotic properties of the local stiffness matrix and a relationship between Fourier and finite Hilbert transform of the contact pressure. The solution of the resulting singular integral equation is obtained using a collocation technique based on the properties of orthogonal polynomials developed by Erdogan and Gupta. Examples are presented that illustrate the important influence of low transverse properties of layers with complex eigenvalues, such as those exhibited by honeycomb, on the load versus contact length response and contact pressure distributions for half planes containing typical composite materials.

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

PubMed

Ji, Yun; Zhang, Zi-Hui; Tan, Swee Tiam; Ju, Zhen Gang; Kyaw, Zabu; Hasanov, Namig; Liu, Wei; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-01-15

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure.

Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

NASA Astrophysics Data System (ADS)

Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki

2018-03-01

Resonant-tunneling diodes (RTDs) with auxiliary quantum wells ( e.g., emitter prewell, subwell, and collector postwell) are studied using a Wigner transport equation (WTE) discretized by a thirdorder upwind differential scheme. A flat-band potential profile is used for the WTE simulation. Our calculations revealed functions of the auxiliary wells as follows: The prewell increases the current density ( J) and the peak voltage ( V p ) while decreasing the peak-to-valley current ratio (PVCR), and the postwell decreases J while increasing the PVCR. The subwell affects J and PVCR, but its main effect is to decrease V p . When multiple auxiliary wells are used, each auxiliary well contributes independently to the transport without producing side effects.

Iterative Methods for Solving Nonlinear Parabolic Problem in Pension Saving Management

NASA Astrophysics Data System (ADS)

Koleva, M. N.

2011-11-01

In this work we consider a nonlinear parabolic equation, obtained from Riccati like transformation of the Hamilton-Jacobi-Bellman equation, arising in pension saving management. We discuss two numerical iterative methods for solving the model problem—fully implicit Picard method and mixed Picard-Newton method, which preserves the parabolic characteristics of the differential problem. Numerical experiments for comparison the accuracy and effectiveness of the algorithms are discussed. Finally, observations are given.

Comparison of Fresnel lenses and parabolic mirrors as solar energy concentrators.

PubMed

Lorenzo, E; Luque, A

1982-05-15

This paper compares the gain that can be achieved with a one- or two-stage concentrator, when the first stage is a Fresnel lens or a parabolic mirror, as a function of the luminosity of the concentrator. The results show that the achievable gain using a parabolic mirror is greater than that obtained using a flat or roof lens but is lower than that obtained using a curved lens.

Communication at the quantum speed limit along a spin chain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Michael; Montangero, Simone; Giovannetti, Vittorio

2010-08-15

Spin chains have long been considered as candidates for quantum channels to facilitate quantum communication. We consider the transfer of a single excitation along a spin-1/2 chain governed by Heisenberg-type interactions. We build on the work of Balachandran and Gong [V. Balachandran and J. Gong, Phys. Rev. A 77, 012303 (2008)] and show that by applying optimal control to an external parabolic magnetic field, one can drastically increase the propagation rate by two orders of magnitude. In particular, we show that the theoretical maximum propagation rate can be reached, where the propagation of the excitation takes the form of amore » dispersed wave. We conclude that optimal control is not only a useful tool for experimental application, but also for theoretical inquiry into the physical limits and dynamics of many-body quantum systems.« less

Interaction between Rashba and Zeeman effects in a quantum well channel.

PubMed

Choi, Won Young; Kwon, Jae Hyun; Chang, Joonyeon; Han, Suk Hee; Koo, Hyun Cheol

2014-05-01

The applied field induced Zeeman effect interferes with Rashba effect in a quantum well system. The angle dependence of Shubnikov-de Haas oscillation shows that the in-plane term of the applied field changes the intrinsic Rashba induced spin splitting. The total effective spin-orbit interaction parameter is determined by the vector sum of the Rashba field and the applied field.

Observations of barrier recombination in GaAs-AlGaAs quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Tsui, E.S.; Fletcher, E.D.

1989-05-29

Using laser structures with a window in the contact stripe, we have observed recombination from the wells and barrier regions of GaAs-AlGaAs quantum well lasers. The magnitude of the ratio of emission intensities from the barrier and the well, and the dependence of this ratio upon injection current, are in good agreement with a calculation in which the carrier populations in well and barrier are in thermal equilibrium at the lattice temperature (300 K).