Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

NASA Astrophysics Data System (ADS)

Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

2016-05-01

We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

High free carrier concentration in p-GaN grown on AlN substrates

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2017-07-01

A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Giant Hall Photoconductivity in Narrow-Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Song, Justin C. W.; Kats, Mikhail A.

2016-12-01

Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a helicity-dependent photoresponse in the Hall regime, where photoconductivity is dominated by its Hall component. We find that the induced Hall conductivity per incident irradiance is enhanced by up to six orders of magnitude when moving from the visible regime (with corresponding band gaps) to the far infrared. These results suggest that narrow-gap GDMs are an ideal test-bed for the unique physics that arise in the presence of Berry curvature, and open a new avenue for infrared and terahertz optoelectronics.

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

PubMed

Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

2012-11-14

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

High temperature hall effect measurement system design, measurement and analysis

NASA Astrophysics Data System (ADS)

Berkun, Isil

A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Grinenko, Vadim; Kurth, Fritz; Ichinose, Ataru; Tsukada, Ichiro; Ahrens, Eike; Pukenas, Aurimas; Chekhonin, Paul; Skrotzki, Werner; Teresiak, Angelika; Hühne, Ruben; Aswartham, Saicharan; Wurmehl, Sabine; Mönch, Ingolf; Erbe, Manuela; Hänisch, Jens; Holzapfel, Bernhard; Drechsler, Stefan-Ludwig; Efremov, Dmitri V.

2016-06-01

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1-xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01

We report the low temperature (T  <  70 °C) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T  <  70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1 s-1 at a carrier density of 2.3  ×  1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

PubMed

Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

2012-11-01

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

Carrier density control of magnetism and Berry phases in doped EuTiO3

NASA Astrophysics Data System (ADS)

Ahadi, Kaveh; Gui, Zhigang; Porter, Zach; Lynn, Jeffrey W.; Xu, Zhijun; Wilson, Stephen D.; Janotti, Anderson; Stemmer, Susanne

2018-05-01

In materials with broken time-reversal symmetry, the Berry curvature acts as a reciprocal space magnetic field on the conduction electrons and is a significant contribution to the magnetotransport properties, including the intrinsic anomalous Hall effect. Here, we report neutron diffraction, transport, and magnetization measurements of thin films of doped EuTiO3, an itinerant magnetic material, as a function of carrier density and magnetic field. These films are itinerant antiferromagnets at all doping concentrations. At low carrier densities, the magnetoresistance indicates a metamagnetic transition, which is absent at high carrier densities (>6 × 1020 cm-3). Strikingly, the crossover coincides with a sign change in the spontaneous Hall effects, indicating a sign change in the Berry curvature. We discuss the results in the context of the band structure topology and its coupling to the magnetic texture.

Influence of Mn concentration on magnetic topological insulator Mn xBi 2−xTe 3 thin-film Hall-effect sensor

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2015-06-11

Hall-effect (HE) sensors based on high-quality Mn-doped Bi 2Te 3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi 2Te 3. The sensors with low Mn concentrations, Mn xBi 2-xTe 3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almostmore » eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

Particulate matter and polycyclic aromatic hydrocarbons in a selected athletic hall: ambient concentrations, origin and effects on human health

NASA Astrophysics Data System (ADS)

Kuskowska, Karolina; Rogula-Kozłowska, Wioletta; Rogula-Kopiec, Patrycja

2018-01-01

The paper presents the results of research on the concentration of 16 polycyclic aromatic hydrocarbons (PAHs) associated with total suspended particles (TSP) and their respirable fraction (PM4) in one of the Warsaw sports halls. Samples of dust were collected for 15 days simultaneously inside and outside (atmospheric air) of the sports hall. The obtained data allowed calculating diagnostic ratios indicating the origin of the PAHs and selected indicators of cumulative exposure to the PAH mixture. Both PM and PAH in the surveyed area were derived from the combustion of solid fuels; this involved pollution both in the atmospheric air and in the air inside the sports hall. It has been shown that the exposure of sports hall users to PAHs is significantly higher than the exposure resulting from concentrations recorded in the atmospheric air.

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Development of scanning graphene Hall probes for magnetic microscopy

NASA Astrophysics Data System (ADS)

Schaefer, Brian T.; Wang, Lei; McEuen, Paul L.; Nowack, Katja C.

We discuss our progress on developing scanning Hall probes fabricated from hexagonal boron nitride (hBN)-encapsulated graphene, with the goal to image magnetic fields with submicron resolution. In contrast to scanning superconducting quantum interference device (SQUID) microscopy, this technique is compatible with a large applied magnetic field and not limited to cryogenic temperatures. The field sensitivity of a Hall probe depends inversely on carrier density, while the primary source of noise in the measurement is Johnson noise originating from the device resistance. hBN-encapsulated graphene demonstrates high carrier mobility at low carrier densities, therefore making it an ideal material for sensitive Hall probes. Furthermore, engineering the dielectric environment of graphene by encapsulating in hBN reduces low-frequency charge noise and disorder from the substrate. We outline our plans for adapting these devices for scanning, including characterization of the point spread function with a scanned current loop and fabrication of a deep-etched structure that enables positioning the sensitive area within 100 nanometers of the sample surface.

Effects of carrier concentrations on the charge transport properties in monolayer silicene

NASA Astrophysics Data System (ADS)

Abidin, B. I.; Yeoh, K. H.; Ong, D. S.; Yong, T. K.

2017-10-01

Using analytical band Monte Carlo approach, we have carried out a systematic study on the effects of carrier concentrations on the steady-state and transient electron transports that occur within a monolayer silicene. In particular, we have observed the following: First at steady-state, the electron mobility reduces with higher carrier concentrations. Secondly, in the transient regime we found that the drift velocity overshoot can be controlled by varying the carrier concentrations. We uncover that at carrier concentration of 1  ×  1013 cm-2, the drift velocity overshoot can reach up to 3.8  ×  107 cm s-1 which is close to the steady-state drift velocity saturation of graphene. Thirdly, the distance of the velocity over shoot can be further extended with higher carrier concentrations. Our findings could be useful and can be used as benchmark for future development of nanoscale silicene based devices.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from

Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study

NASA Astrophysics Data System (ADS)

Pan, Y.; Wu, D.; Angevaare, J. R.; Luigjes, H.; Frantzeskakis, E.; de Jong, N.; van Heumen, E.; Bay, T. V.; Zwartsenberg, B.; Huang, Y. K.; Snelder, M.; Brinkman, A.; Golden, M. S.; de Visser, A.

2014-12-01

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi1.46Sb0.54Te1.7Se1.3. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with α ≃ -1 as expected for transport dominated by topological surface states.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borgwardt, M., E-mail: mario.borgwardt@helmholtz-berlin.de; Sippel, P.; Eichberger, R.

Excitation correlation photoluminescence (ECPL) measurements are often analyzed in the approximation of a cross correlation of charge carrier populations generated by the two delayed pulses. In semiconductors, this approach is valid for a linear non-radiative recombination path, but not for a non-linear recombination rate as in the general Shockley-Read-Hall recombination scenario. Here, the evolution of the ECPL signal was studied for deep trap recombination following Shockley-Read-Hall statistics. Analytic solutions can be obtained for a fast minority trapping regime and steady state recombination. For the steady state case, our results show that the quadratic radiative term plays only a minor role,more » and that the shape of the measured signal is mostly determined by the non-linearity of the recombination itself. We find that measurements with unbalanced intense pump and probe pulses can directly provide information about the dominant non-radiative recombination mechanism. The signal traces follow the charge carrier concentrations, despite the complex origins of the signal, thus showing that ECPL can be applied to study charge carrier dynamics in semiconductors without requiring elaborate calculations. The model is compared with measurements on a reference sample with alternating layers of InGaAs/InAlAs that were additionally cross-checked with time resolved optical pump terahertz probe measurements and found to be in excellent agreement.« less

Determination of carrier concentration and compensation microprofiles in GaAs

NASA Technical Reports Server (NTRS)

Jastrzebski, L.; Lagowski, J.; Walukiewicz, W.; Gatos, H. C.

1980-01-01

Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

Batch-fabricated high-performance graphene Hall elements

PubMed Central

Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

2013-01-01

Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

Observation of a superfluid Hall effect

PubMed Central

Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

2012-01-01

Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

Novel approach for calculating the charge carrier mobility and Hall factor for semiconductor materials

NASA Astrophysics Data System (ADS)

Colibaba, G. V.

2018-06-01

The additive Matthiessen's rule is the simplest and most widely used rule for the rapid experimental characterization and modeling of the charge carrier mobility. However, the error when using this rule can be higher than 40% and the contribution of the assumed additional scattering channels due to the difference between the experimental data and results calculated based on this rule can be misestimated by several times. In this study, a universal semi-additive equation is proposed for the total mobility and Hall factor, which is applicable to any quantity of scattering mechanisms, where it considers the energy dependence of the relaxation time and the error is 10-20 times lower compared with Matthiessen's rule. Calculations with accuracy of 99% are demonstrated for materials with polar-optical phonon, acoustic phonon via the piezoelectric potential, ionized, and neutral impurity scattering. The proposed method is extended to the deformation potential, dislocation, localized defect, alloy potential, and dipole scattering, for nondegenerate and partially degenerate materials.

Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

NASA Astrophysics Data System (ADS)

Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne

2018-05-01

Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ˜3.9 × 1014 cm-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

Macroscopic kinematics of the Hall electric field under influence of carrier magnetic moments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Masamichi, E-mail: sakai@fms.saitama-u.ac.jp

2016-06-15

The relativistic effect on electromagnetic forces yields two types of forces which depend on the velocity of the relevant particles: (i) the usual Lorentz force exerted on a moving charged particle and (ii) the apparent Lorentz force exerted on a moving magnetic moment. In sharp contrast with type (i), the type (ii) force originates due to the transverse field induced by the Hall effect (HE). This study incorporates both forces into a Drude-type equation with a fully spin-polarized condition to investigate the effects of self-consistency of the source and the resultant fields on the HE. We also examine the self-consistencymore » of the carrier kinematics and electromagnetic dynamics by simultaneously considering the Drude type equation and Maxwell equations at low frequencies. Thus, our approach can predict both the dc and ac characteristics of the HE, demonstrating that the dc current condition solely yields the ordinary HE, while the ac current condition yields generation of both fundamental and second harmonic modes of the HE field. When the magnetostatic field is absent, the simultaneous presence of dc and ac longitudinal currents generates the ac HE that has both fundamental frequency and second harmonic.« less

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

PubMed Central

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-01-01

Abstract The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm−2 and 7 × 1014 cm−2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm−2 and 2 × 1013 cm−2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10–13 cm2 V−1 s−1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500–700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm−3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500–700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration. PMID:28567175

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

NASA Astrophysics Data System (ADS)

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-12-01

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.

Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires

NASA Astrophysics Data System (ADS)

Sonner, M.; Treu, J.; Saller, K.; Riedl, H.; Finley, J. J.; Koblmüller, G.

2018-02-01

We report the effects of intentional n-type doping on the photoluminescence (PL) properties of InAs nanowires (NWs). Employing silicon (Si) as a dopant in molecular beam epitaxy grown NWs, the n-type carrier concentration is tuned between 1 × 1017 cm-3 and 3 × 1018 cm-3 as evaluated from Fermi-tail fits of the high-energy spectral region. With the increasing carrier concentration, the PL spectra exhibit a distinct blueshift (up to ˜50 meV), ˜2-3-fold peak broadening, and a redshift of the low-energy tail, indicating both the Burstein-Moss shift and bandgap narrowing. The low-temperature bandgap energy (EG) decreases from ˜0.44 eV (n ˜ 1017 cm-3) to ˜0.41 eV (n ˜ 1018 cm-3), following a ΔEG ˜ n1/3 dependence. Simultaneously, the PL emission is quenched nearly 10-fold, while the pump-power dependent analysis of the integrated PL intensity evidences a typical 2/3-power-law scaling, indicative of non-radiative Auger recombination at high carrier concentrations. Carrier localization and activation at stacking defects are further observed in undoped InAs NWs by temperature-dependent measurements but are absent in Si-doped InAs NWs due to the increased Fermi energy.

Classical Hall Effect without Magnetic Field

NASA Astrophysics Data System (ADS)

Schade, Nicholas; Tao, Chiao-Yu; Schuster, David; Nagel, Sidney

We show that the sign and density of charge carriers in a material can be obtained without the presence of a magnetic field. This effect, analogous to the classical Hall effect, is due solely to the geometry of the current-carrying wire. When current flows, surface charges along the wire create small electric fields that direct the current to follow the path of the conductor. In a curved wire, the charge carriers must experience a centripetal force, which arises from an electric field perpendicular to the drift velocity. This electric field produces a potential difference between the sides of the wire that depends on the sign and density of the charge carriers. We experimentally investigate circuits made from superconductors or graphene to find evidence for this effect.

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

2018-02-01

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

Surface Depletion Correction to Carrier Profiles by Hall Measurements.

DTIC Science & Technology

1985-12-01

deviations much larger than those predicted by the LSS theory. There are several advantages of the differential Hall method over the C-V method. For...3Y 2 ) bo A’ 64 b -- (2j8 3 2 -6) 2 A where A = 10$ - 12)Y2 -18. Equation (3) may now be integrated to obtain an analitic V.-’.4 function, in terms of

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Alberi, Kirstin; Scarpulla, Michael A.

2018-05-01

Unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation enthalpy of a charged defect depends linearly on the Fermi level, doping limits can be especially pronounced in wide bandgap semiconductors where the Fermi level can vary substantially. Introduction of non-equilibrium carrier concentrations during growth or processing alters the chemical potentials of band carriers and allows populations of charged defects to be modified in ways impossible at thermal equilibrium. We demonstrate that in the presence of excess carriers, the rates of carrier capture and emission involving a defect charge transition level determine the admixture of electron and hole quasi-Fermi levels involved in the formation enthalpy of non-zero charge defect states. To understand the range of possible responses, we investigate the behavior of a single donor-like defect as functions of extrinsic doping and charge transition level energy. We find that that excess carriers will increase the formation enthalpy of compensating defects for most values of the charge transition level in the bandgap. Thus, it may be possible to use non-equilibrium carrier concentrations to overcome limitations on doping imposed by native defects. Cases also exist in which the concentration of defects with the same charge polarity as the majority dopant is either left unchanged or actually increases. This surprising effect arises when emission rates are suppressed relative to the capture rates and is most pronounced in wide bandgap semiconductors. We provide guidelines for carrying out experimental tests of this model.

Effects of Excess Carriers on Charged Defect Concentrations in Wide Bandgap Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alberi, Kirstin M; Scarpulla, Michael A.

Unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation enthalpy of a charged defect depends linearly on the Fermi level, doping limits can be especially pronounced in wide bandgap semiconductors where the Fermi level can vary substantially. Introduction of non-equilibrium carrier concentrations during growth or processing alters the chemical potentials of band carriers and allows populations of charged defects to be modified in ways impossible at thermal equilibrium. We demonstrate that in the presence of excess carriers, the rates of carrier capture and emission involving a defect charge transitionmore » level determine the admixture of electron and hole quasi-Fermi levels involved in the formation enthalpy of non-zero charge defect states. To understand the range of possible responses, we investigate the behavior of a single donor-like defect as functions of extrinsic doping and charge transition level energy. We find that that excess carriers will increase the formation enthalpy of compensating defects for most values of the charge transition level in the bandgap. Thus, it may be possible to use non-equilibrium carrier concentrations to overcome limitations on doping imposed by native defects. Cases also exist in which the concentration of defects with the same charge polarity as the majority dopant is either left unchanged or actually increases. This surprising effect arises when emission rates are suppressed relative to the capture rates and is most pronounced in wide bandgap semiconductors. We provide guidelines for carrying out experimental tests of this model.« less

Angular Magnetoresistance and Hall Measurements in New Dirac Material, ZrSiS

NASA Astrophysics Data System (ADS)

Ali, Mazhar; Schoop, Leslie; Lotsch, Bettina; Parkin, Stuart

Dirac and Weyl materials have shot to the forefront of condensed matter research in the last few years. Recently, the square-net material, ZrSiS, was theorized and experimentally shown (via ARPES) to host several highly dispersive Dirac cones, including the first Dirac cone demanded by non-symmorphic symmetry in a Si square net. Here we report the magnetoresistance and Hall Effect measurements in this compound. ZrSiS samples with RRR = 40 were found to have MR values up to 6000% at 2 K, be predominantly p-type with a carrier concentration of ~8 x 1019 cm-3 and mobility ~8500 cm2/Vs. Angular magnetoresistance measurements reveal a peculiar behavior with multiple local maxima, depending on field strength, indicating of a sensitive and sensitive Fermi surface. SdH oscillations analysis confirms Hall and angular magnetoresistance measurements. These results, in the context of the theoretical and ARPES results, will be discussed.

Hall effect at a tunable metal-insulator transition

NASA Astrophysics Data System (ADS)

Teizer, W.; Hellman, F.; Dynes, R. C.

2003-03-01

Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient R0 is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. R0 diverges at the metal-insulator transition, and displays critical behavior with exponent -1 [R0˜(H-HC)-1]. This dependence is interpreted as a linear decrease in the density of mobile carriers n˜R-10˜H-HC, indicative of the dominant influence of interaction effects.

Complex Terahertz and Direct Current Inverse Spin Hall Effect in YIG/Cu1-xIrx Bilayers Across a Wide Concentration Range.

PubMed

Cramer, Joel; Seifert, Tom; Kronenberg, Alexander; Fuhrmann, Felix; Jakob, Gerhard; Jourdan, Martin; Kampfrath, Tobias; Kläui, Mathias

2018-02-14

We measure the inverse spin Hall effect of Cu 1-x Ir x thin films on yttrium iron garnet over a wide range of Ir concentrations (0.05 ⩽ x ⩽ 0.7). Spin currents are triggered through the spin Seebeck effect, either by a continuous (dc) temperature gradient or by ultrafast optical heating of the metal layer. The spin Hall current is detected by electrical contacts or measurement of the emitted terahertz radiation. With both approaches, we reveal the same Ir concentration dependence that follows a novel complex, nonmonotonous behavior as compared to previous studies. For small Ir concentrations a signal minimum is observed, whereas a pronounced maximum appears near the equiatomic composition. We identify this behavior as originating from the interplay of different spin Hall mechanisms as well as a concentration-dependent variation of the integrated spin current density in Cu 1-x Ir x . The coinciding results obtained for dc and ultrafast stimuli provide further support that the spin Seebeck effect extends to terahertz frequencies, thus enabling a transfer of established spintronic measurement schemes into the terahertz regime. Our findings also show that the studied material allows for efficient spin-to-charge conversion even on ultrafast time scales.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Nondestructive hall coefficient measurements using ACPD techniques

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2018-04-01

Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Quantum energy teleportation in a quantum Hall system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusa, Go; Izumida, Wataru; Hotta, Masahiro

2011-09-15

We propose an experimental method for a quantum protocol termed quantum energy teleportation (QET), which allows energy transportation to a remote location without physical carriers. Using a quantum Hall system as a realistic model, we discuss the physical significance of QET and estimate the order of energy gain using reasonable experimental parameters.

Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity

NASA Astrophysics Data System (ADS)

Jha, Rajveer; Higashinaka, Ryuji; Matsuda, Tatsuma D.; Ribeiro, Raquel A.; Aoki, Yuji

2018-05-01

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5 × 106 % in 9 T at 2 K, being in the highest class in the literature, attest to their high quality. Based on a simple two-carrier model, the densities (ne and nh) and mobilities (μe and μh) for electron and hole carriers have been uniquely determined combining both Hall- and electrical-resistivity data. The difference between ne and nh is 1% at 2 K, indicating that the system is in an compensated condition. The negative Hall resistivity growing rapidly below 20 K is due to a rapidly increasing μh/μe approaching one. Below 3 K in a low field region, we found the Hall resistivity becomes positive, reflecting that μh/μe finally exceeds one in this region. These anomalous behaviors of the carrier densities and mobilities might be associated with the existence of a Lifshitz transition and/or the spin texture on the Fermi surface.

Topological Phase Transitions in the Photonic Spin Hall Effect

DOE PAGES

Kort-Kamp, Wilton Junior de Melo

2017-10-04

The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valleymore » properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.« less

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Concentration dependent carriers dynamics in CsPbBr3 perovskite nanocrystals film with transient grating

NASA Astrophysics Data System (ADS)

Wang, Yinghui; Wang, Yanting; Dev Verma, Sachin; Tan, Mingrui; Liu, Qinghui; Yuan, Qilin; Sui, Ning; Kang, Zhihui; Zhou, Qiang; Zhang, Han-Zhuang

2017-05-01

The concentration dependence of the carrier dynamics is a key parameter to describe the photo-physical properties of semiconductor films. Here, we investigate the carrier dynamics in the CsPbBr3 perovskite nanocrystal film by employing the transient grating (TG) technique with continuous bias light. The concentration of initial carriers is determined by the average number of photons per nanocrystals induced by pump light (⟨N⟩). The multi-body interaction would appear and accelerate the TG dynamics with ⟨N⟩. When ⟨N⟩ is more than 3.0, the TG dynamics slightly changes, which implies that the Auger recombination would be the highest order multi-body interaction in carrier recombination dynamics. The concentration of non-equilibrium carriers in the film is controlled by the average number of photons per nanocrystals excited by continuous bias light (⟨nne⟩). Increasing ⟨nne⟩ would improve the trapping-detrapping process by filling the trapping state, which would accelerate the carrier diffusion and add the complexity of the mono-molecular recombination mechanism. The results should be useful to further understand the mechanism of carrier dynamics in the CsPbBr3 perovskite nanocrystal film and of great importance for the operation of the corresponding optoelectronic devices.

Carrier Concentration Control of GaSb/GaInAsSb System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazzari, J.-L.; Anda, F. de; Nieto, J.

2007-02-22

The residual carrier concentration of GaSb and GaSb-lattice matched Ga1-xInxAsySb1-y alloys (x = 0.12-0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p {approx} 2-3x1016 cm-3 were obtained for undoped GaSb grown by MBE at 480 deg. C, by LPE from Ga-rich melt at low temperature (400 deg. C), and by LPE from Sb-rich melts at {approx}600 deg. C. The native acceptor defect responsible of the high p-type residual doping in GaSb is reduced when the indium concentrationmore » is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n-type doping in the (0.05-30)x1017 cm-3 range. A maximum of free carrier concentration was 1.5x1018 cm-3 for LPE layers, 2x1018 cm-3 for MBE layers grown at 1.0 {mu}m/h, 3.5x1018 cm-3 for MBE layers grown at 0.2 {mu}m/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of ternary GaSb1-xTex solid solution.« less

Intrinsic Carrier Concentration and Electron Effective Mass in Hg(1-x) Zn(x) Te

NASA Technical Reports Server (NTRS)

Sha, Yi-Gao; Su, Ching-Hua; Lehoczky, S. L.

1997-01-01

In this work, the intrinsic carrier concentration and electron effective mass in Hg(l-x)Zn(x)Te were numerically calculated. We adopt the procedures similar to those used by Su et. al. for calculating intrinsic carrier concentrations in Hg(1-x)Cd(x)Te which solve the exact dispersion relation in Kane model for the calculation of the conduction band electron concentrations and the corresponding electron effective masses. No approximation beyond those inherent in the k centered dot p model was used here.

Superfluid density and carrier concentration across a superconducting dome: The case of strontium titanate

NASA Astrophysics Data System (ADS)

Collignon, Clément; Fauqué, Benoît; Cavanna, Antonella; Gennser, Ulf; Mailly, Dominique; Behnia, Kamran

2017-12-01

We present a study of the lower critical field, Hc 1, of SrTi1 -xNbxO3 as a function of carrier concentration with the aim of quantifying the superfluid density. At low carrier concentration (i.e., the underdoped side), superfluid density and the carrier concentration in the normal state are equal within experimental margin. A significant deviation between the two numbers starts at optimal doping and gradually increases with doping. The inverse of the penetration depth and the critical temperature follow parallel evolutions as in the case of cuprate superconductors. In the overdoped regime, the zero-temperature superfluid density becomes much lower than the normal-state carrier density before vanishing all together. We show that the density mismatch and the clean-to-dirty crossover are concomitant. Our results imply that the discrepancy between normal and superconducting densities is expected whenever the superconducting gap becomes small enough to put the system in the dirty limit. A quantitative test of the dirty BCS theory is not straightforward, due to the multiplicity of the bands in superconducting strontium titanate.

Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

NASA Astrophysics Data System (ADS)

Singh, Baljinder; Singh, Janpreet; Kaur, Jagdish; Moudgil, R. K.; Tripathi, S. K.

2016-06-01

Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

Band gap modulation in magnetically doped low-defect thin films of (Bi1-xSbx)2 Te3 with minimized bulk carrier concentration

NASA Astrophysics Data System (ADS)

Maximenko, Yulia; Scipioni, Kane; Wang, Zhenyu; Katmis, Ferhat; Steiner, Charles; Weis, Adam; van Harlingen, Dale; Madhavan, Vidya

Topological insulators Bi2Te3 and Sb2Te3 are promising materials for electronics, but both are naturally prone to vacancies and anti-site defects that move the Fermi energy onto the bulk bands. Fabricating (Bi1-xSbx)2 Te3 (BST) with the tuned x minimizes point defects and unmasks topological surface states by reducing bulk carriers. BST thin films have shown topological surface states and quantum anomalous Hall effect. However, different studies reported variable Sb:Bi ratios used to grow an undoped BST film. Here, we develop a reliable way to grow defect-free subnanometer-flat BST thin films having the Fermi energy tuned to the Dirac point. High-resolution scanning tunneling microscopy (STM) and Landau level spectroscopy prove the importance of crystallinity and surface roughness-not only Sb:Bi ratio-for the final bulk carrier concentration. The BST thin films were doped with Cr and studied with STM with atomic resolution. Counterintuitively, Cr density is anticorrelated with the local band gap due to Cr's antiferromagnetic order. We analyze the correlations and report the relevant band gap values. Predictably, high external magnetic field compromises antiferromagnetic order, and the local band gap increases. US DOE DE-SC0014335; Moore Found. GBMF4860; F. Seitz MRL.

Charge carrier concentration dependence of encounter-limited bimolecular recombination in phase-separated organic semiconductor blends

NASA Astrophysics Data System (ADS)

Heiber, Michael C.; Nguyen, Thuc-Quyen; Deibel, Carsten

2016-05-01

Understanding how the complex intermolecular configurations and nanostructure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a particularly major impact on organic photovoltaic applications. In this study, kinetic Monte Carlo (KMC) simulations are used to numerically quantify the complex bimolecular charge carrier recombination behavior in idealized phase-separated blends. Recent KMC simulations have identified how the encounter-limited bimolecular recombination rate in these blends deviates from the often used Langevin model and have been used to construct the new power mean mobility model. Here, we make a challenging but crucial expansion to this work by determining the charge carrier concentration dependence of the encounter-limited bimolecular recombination coefficient. In doing so, we find that an accurate treatment of the long-range electrostatic interactions between charge carriers is critical, and we further argue that many previous KMC simulation studies have used a Coulomb cutoff radius that is too small, which causes a significant overestimation of the recombination rate. To shed more light on this issue, we determine the minimum cutoff radius required to reach an accuracy of less than ±10 % as a function of the domain size and the charge carrier concentration and then use this knowledge to accurately quantify the charge carrier concentration dependence of the recombination rate. Using these rigorous methods, we finally show that the parameters of the power mean mobility model are determined by a newly identified dimensionless ratio of the domain size to the average charge carrier separation distance.

Influence of Thermal Annealing on Free Carrier Concentration in (GaN) 1–x(ZnO) x Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Huafeng; Sklute, Elizabeth C.; Lehuta, Keith A.

It has been previously demonstrated that the efficiency of (GaN) 1–x(ZnO) x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN) 1–x(ZnO) x. The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sensitivity to the free carrier response at the lowest energies and EPR measurements which directly probe the number of unpaired electrons. For the thermalmore » annealing of investigated compositions, it is found that temperatures of 250 °C and below do not measurably change the free carrier concentration, a gradual reduction of the free carrier concentration occurs over a time period of many hours at 350 °C, and the complete elimination of free carriers happens within an hour at 550 °C. These changes are driven by an oxidative process which is effectively suppressed under actively reducing atmospheres (H 2, NH 3) but which can still occur under nominally inert gases (N 2, Ar). Surprisingly, it is found that the N 2 gas released during thermal oxidation of (GaN) 1–x(ZnO) x samples remains trapped within the solid matrix and is not expelled until temperatures of about 900 °C, a result directly confirmed through neutron pair-distribution fuction (PDF) measurements which show a new peak at the 1.1 Å bond length of molecular nitrogen after annealing. Preliminary comparative photoelectrochemical (PEC) measurements of the influence of free carrier concentration on photoactivity for water oxidation were carried out for a sample with x = 0.64. Samples annealed to eliminate free carriers exhibited no photoactivity for water oxidation, while a complex dependence on carrier concentration was observed for samples with intermediate free carrier concentrations

Influence of Thermal Annealing on Free Carrier Concentration in (GaN) 1–x(ZnO) x Semiconductors

DOE PAGES

Huang, Huafeng; Sklute, Elizabeth C.; Lehuta, Keith A.; ...

2017-09-13

It has been previously demonstrated that the efficiency of (GaN) 1–x(ZnO) x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN) 1–x(ZnO) x. The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sensitivity to the free carrier response at the lowest energies and EPR measurements which directly probe the number of unpaired electrons. For the thermalmore » annealing of investigated compositions, it is found that temperatures of 250 °C and below do not measurably change the free carrier concentration, a gradual reduction of the free carrier concentration occurs over a time period of many hours at 350 °C, and the complete elimination of free carriers happens within an hour at 550 °C. These changes are driven by an oxidative process which is effectively suppressed under actively reducing atmospheres (H 2, NH 3) but which can still occur under nominally inert gases (N 2, Ar). Surprisingly, it is found that the N 2 gas released during thermal oxidation of (GaN) 1–x(ZnO) x samples remains trapped within the solid matrix and is not expelled until temperatures of about 900 °C, a result directly confirmed through neutron pair-distribution fuction (PDF) measurements which show a new peak at the 1.1 Å bond length of molecular nitrogen after annealing. Preliminary comparative photoelectrochemical (PEC) measurements of the influence of free carrier concentration on photoactivity for water oxidation were carried out for a sample with x = 0.64. Samples annealed to eliminate free carriers exhibited no photoactivity for water oxidation, while a complex dependence on carrier concentration was observed for samples with intermediate free carrier concentrations

Hall effect spintronics for gas detection

NASA Astrophysics Data System (ADS)

Gerber, A.; Kopnov, G.; Karpovski, M.

2017-10-01

We present the concept of magnetic gas detection by the extraordinary Hall effect. The technique is compatible with the existing conductometric gas detection technologies and allows the simultaneous measurement of two independent parameters: resistivity and magnetization affected by the target gas. Feasibility of the approach is demonstrated by detecting low concentration hydrogen using thin CoPd films as the sensor material. The Hall effect sensitivity of the optimized samples exceeds 240% per 104 ppm at hydrogen concentrations below 0.5% in the hydrogen/nitrogen atmosphere, which is more than two orders of magnitude higher than the sensitivity of the conductance detection.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Hall Plateaus at magic angles in ultraquantum Bismuth

NASA Astrophysics Data System (ADS)

Benoît, Fauqué.

2009-03-01

The behaviour of a three-dimensional electron gas in the presence of a magnetic field strong enough to put all carriers in the first Landau level (i.e. beyond the quantum limit) is a longstanding question of theoretical condensed matter physics [1]. This issue has been recently explored by two high-field experiments on elemental semi-metal Bismuth. In a first study of transport coefficients (which are dominated by hole-like carriers), the Nernst coefficient presented three unexpected maxima that are concomitant with quasi-plateaux in the Hall coefficient [2]. In a second series of experiments, torque magnetometry (which mainly probes the three Dirac valley electron pockets) detected a field-induced phase transition [3]. The full understanding of the electron and hole behaviours above the quantum limit of pure Bi is therefore still under debate. In this talk, we will present our measurement of the Hall resistivity and torque magnetometry with magnetic field up to 31 T and rotating in the trigonal-bisectrix plane [4]. The Hall response is dominated by the hole pockets according to its sign as well as the period and the angular dependence of its quantum oscillations. In the vicinity of the quantum limit, it presents additional anomalies which are the fingerprints of the electron pockets. We found that for particular orientations of the magnetic field (namely ``magic angles''), the Hall response becomes field-independent within the experimental resolution around 20T. This drastic dependence of the plateaux on the field orientation provides strong constraints for theoretical scenarios. [4pt] [1] Bertrand I. Halperin, Japanese Journal of Applied Physics, 26, Supplement 26-3 (1987).[0pt] [2] Kamran Behnia, Luis Balicas, Yakov Kopelevich, Science, 317, 1729 (2008).[0pt] [3] Lu Li, J. G. Checkelsky, Y. S. Hor, C. Uher, A. F. Hebard, R. J. Cava, and N. P. Ong , Science, 321, 5888 (2008).[0pt] [4] Benoît Fauqu'e, Luis Balicas, Ilya Sheikin, Jean Paul Issi and Kamran Behnia

Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

NASA Astrophysics Data System (ADS)

Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

2016-09-01

Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

NASA Astrophysics Data System (ADS)

Baily, Scott Alan

La1-xCaxCoO3 near T C, but the material presents many additional complexities, including a unique low temperature magnetoresistance. At low temperature, the Hall effect may be best explained by spin-polarized carriers scattering off of orbital disorder in spin-ordered clusters.

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

2015-05-11

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

Hole mobilities and the effective Hall factor in p-type GaAs

NASA Astrophysics Data System (ADS)

Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

1997-06-01

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan; Lowder, Jonathan; Moseley, Michael; Alan Doolittle, W.

2012-08-01

Highly p-type GaN films with hole concentrations exceeding 6 × 1019 cm-3 grown by metal-modulated epitaxy are electrically characterized. Temperature-dependent Hall effect measurements at cryogenic temperatures reveal minimal carrier freeze-out in highly doped samples, while less heavily doped samples exhibited high resistivity and donor-compensated conductivity as is traditionally observed. Effective activation energies as low as 43 meV were extracted, and a maximum Mg activation efficiency of 52% was found. In addition, the effective activation energy was found to be negatively correlated to the hole concentration. These results indicate the onset of the Mott-Insulator transition leading to impurity band conduction.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun

2016-05-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm2 V-1 s-1 at 300 K and 72 cm2 V-1 s-1 at 200 K were observed in lightly doped p-GaN.

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S 1–xSe x) 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frick, Jessica J.; Kushwaha, Satya K.; Cava, Robert J.

We report the carrier transport properties of CuIn(S 1-xSe x) 2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10 3 to 10 –1 Ohm cm) for 1% Mg-doped CuIn(S 1–xSe x) 2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10 15 to 10 18 cm –3more » and mobilities of approximately 1–10 cm 2 V –1 s –1. These results provide insights into the fundamental carrier transport properties of CuIn(S 1–xSe x) 2 and will be of value in optimizing these materials further for photoelectrochemistry applications.« less

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S 1–xSe x) 2

DOE PAGES

Frick, Jessica J.; Kushwaha, Satya K.; Cava, Robert J.; ...

2017-07-27

We report the carrier transport properties of CuIn(S 1-xSe x) 2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10 3 to 10 –1 Ohm cm) for 1% Mg-doped CuIn(S 1–xSe x) 2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10 15 to 10 18 cm –3more » and mobilities of approximately 1–10 cm 2 V –1 s –1. These results provide insights into the fundamental carrier transport properties of CuIn(S 1–xSe x) 2 and will be of value in optimizing these materials further for photoelectrochemistry applications.« less

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Mitani, Takeshi; Nakashima, Shin-ichi; Kojima, Kazutoshi; Kato, Tomohisa; Okumura, Hajime

2012-08-01

For n-type 4H-SiC crystals with carrier concentrations between 2 × 1017 and 2.5 × 1020 cm-3, Fano interference of the folded transverse acoustic (FTA) doublet modes was observed. The Fano line-shape parameters were shown to vary with carrier concentration. It is proposed that the peak shifts in the FTA modes resulting from interference with an electronic continuum state can be used to measure carrier concentration for n-type 4H-SiC up to 1020 cm-3. In addition, the relative intensity of the FTA doublet modes varies markedly with carrier concentrations above 5 × 1018 cm-3. This suggests that mode coupling occurs between the FTA doublet components. The variation in the intensity ratio is attributed to the intensity transfer between the FTA doublet components. This mode coupling arises from a phonon-phonon interaction via electronic continuum state-phonon interactions.

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinitymore » arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.« less

Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

NASA Astrophysics Data System (ADS)

Upadhyaya, Pramey; Tserkovnyak, Yaroslav

2016-07-01

We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levin, E. M.

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE PAGES

Levin, E. M.

2016-06-27

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Heterozygous carriers of classical homocystinuria tend to have higher fasting serum homocysteine concentrations than non-carriers in the presence of folate deficiency.

PubMed

Lu, Yung-Hsiu; Cheng, Li-Mei; Huang, Yu-Hsiu; Lo, Ming-Yu; Wu, Tina Jui-Ting; Lin, Hsiang-Yu; Hsu, Ting-Rong; Niu, Dau-Ming

2015-12-01

Many studies have reported that serum total homocysteine (tHcy) levels in cystathionine-beta-synthase (CBS) carriers are usually normal and only elevated after a methionine load. However, the amount of methionine required for a loading test is non-physiological and is never reached with regular feeding. Therefore, CBS carriers do not seem to be at an increased risk of cardiovascular diseases. However, the risk of cardiovascular diseases of CBS carriers with folate deficiency has not been studied. We recently found an extraordinarily high carrier rate (1/7.78) of a novel CBS mutation (p.D47E, c.T141A) in an Austronesian Taiwanese Tao tribe who live in a geographic area with folate deficiency. We evaluated if the CBS carriers tend to have higher fasting serum tHcy concentrations than non-carriers in presence of folate deficiency. The serum tHcy and folate levels before and after folate replacement were measured in 48 adult Tao carriers, 40 age-matched Tao non-carriers and 40 age-matched Han Taiwanese controls. The serum tHcy level of the Tao CBS carriers (17.9 ± 3.8 μmol/l) was significantly higher than in Tao non-carriers (15.7 ± 3.5 μmol/l; p < 0.008) and Taiwanese controls (11.8 ± 2.9 μmol/l; p < 0.001). Furthermore, a high prevalence of folate deficiency in the Tao compared with the Taiwanese controls (4.9 ± 1.8 ng/ml vs. 10.6 ± 5.5 ng/ml; p < 0.001) was also noted. Of note, the difference in tHcy levels between the carriers and non-carriers was eliminated by folate supplementation. (carriers:13.65 ± 2.13 μmol/l; non-carriers:12.39 ± 3.25 μmol/l, p = 0.321). CBS carriers tend to have a higher tHcy level in the presence of folate deficiency than non-carriers. Although many reports have indicated that CBS carriers are not associated with cardiovascular disease, the risk for CBS carriers with folate deficiency has not been well studied. Owing to a significantly elevated level of fasting tHcy without methionine loading, it is important to evaluate the

Hall effect in a moving liquid

NASA Astrophysics Data System (ADS)

Di Lieto, Alberto; Giuliano, Alessia; Maccarrone, Francesco; Paffuti, Giampiero

2012-01-01

A simple experiment, suitable for performing in an undergraduate physics laboratory, illustrates electromagnetic induction through the water entering into a cylindrical rubber tube by detecting the voltage developed across the tube in the direction transverse both to the flow velocity and to the magnetic field. The apparatus is a very simple example of an electromagnetic flowmeter, a device which is commonly used both in industrial and physiological techniques. The phenomenology observed is similar to that of the Hall effect in the absence of an electric current in the direction of motion of the carriers. The experimental results show a dependence on the intensity of the magnetic field and on the carrier velocity, in good agreement with the theory. Discussion of the system, based on classical electromagnetism, indicates that the effect depends only on the flow rate, and is independent both of the velocity profile and of the electrical conductivity of the medium.

Electron spin resonance observation of charge carrier concentration in organic field-effect transistors during device operation

NASA Astrophysics Data System (ADS)

Tanaka, Hisaaki; Hirate, Masataka; Watanabe, Shun-ichiro; Kaneko, Kazuaki; Marumoto, Kazuhiro; Takenobu, Taishi; Iwasa, Yoshihiro; Kuroda, Shin-ichi

2013-01-01

Charge carrier concentration in operating organic field-effect transistors (OFETs) reflects the electric potential within the channel, acting as a key quantity to clarify the operation mechanism of the device. Here, we demonstrate a direct determination of charge carrier concentration in the operating devices of pentacene and poly(3-hexylthiophene) (P3HT) by field-induced electron spin resonance (FI-ESR) spectroscopy. This method sensitively detects polarons induced by applying gate voltage, giving a clear FI-ESR signal around g=2.003 in both devices. Upon applying drain-source voltage, carrier concentration decreases monotonically in the FET linear region, reaching about 70% of the initial value at the pinch-off point, and stayed constant in the saturation region. The observed results are reproduced well from the theoretical potential profile based on the gradual channel model. In particular, the carrier concentration at the pinch-off point is calculated to be β/(β+1) of the initial value, where β is the power exponent in the gate voltage (Vgs) dependence of the mobility (μ), expressed as μ∝Vgsβ-2, providing detailed information of charge transport. The present devices show β=2.6 for the pentacene and β=2.3 for the P3HT cases, consistent with those determined by transfer characteristics. The gate voltage dependence of the mobility, originating from the charge trapping at the device interface, is confirmed microscopically by the motional narrowing of the FI-ESR spectra.

Interaction driven quantum Hall effect in artificially stacked graphene bilayers

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-01-01

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-04-21

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers.

Carrier concentration tuning in thermoelectric thiospinel Cu2CoTi3S8 by oxidative extraction of copper

NASA Astrophysics Data System (ADS)

Hashikuni, Katsuaki; Suekuni, Koichiro; Watanabe, Kosuke; Bouyrie, Yohan; Ohta, Michihiro; Ohtaki, Michitaka; Takabatake, Toshiro

2018-03-01

We report a method for carrier concentration tuning in the thermoelectric thiospinel Cu2CoTi3S8, which exhibits an n-type metallic character and a high power factor. An oxidative Cu extraction treatment produced Cu defects, resulting in Cu2-xCoTi3S8 up to x = 0.62. The electron carrier concentration was effectively reduced by this treatment, leading to the decrease in power factor, whereas the electronic contribution to the thermal conductivity was suppressed. As a result, the dimensionless figure of merit ZT remained unchanged as 0.2 at 670 K in the whole range of x ≤ 0.62. The oxidative Cu extraction described in this paper offers an opportunity to tune the electron carrier concentration for Cu-containing thermoelectric materials.

Temperature-driven band inversion in Pb 0.77 Sn 0.23 Se : Optical and Hall effect studies

DOE PAGES

Anand, Naween; Buvaev, Sanal; Hebard, A. F.; ...

2014-12-23

Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmore » spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.« less

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Anomalous Hall resistance in bilayer quantum Hall systems

NASA Astrophysics Data System (ADS)

Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

2007-07-01

We present a microscopic theory of the Hall current in the bilayer quantum Hall system on the basis of noncommutative geometry. By analyzing the Heisenberg equation of motion and the continuity equation of charge, we demonstrate the emergence of the phase current in a system where the interlayer phase coherence develops spontaneously. The phase current arranges itself to minimize the total energy of the system, as it induces certain anomalous behaviors in the Hall current in the counterflow geometry and also in the drag experiment. They explain the recent experimental data for anomalous Hall resistances due to Kellogg [Phys. Rev. Lett. 88, 126804 (2002); 93, 036801 (2004)] and Tutuc [Phys. Rev. Lett. 93, 036802 (2004)] at ν=1 .

5. View of Community Hall, first floor interior, entrance hall ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. View of Community Hall, first floor interior, entrance hall on east side of building, facing southeast. Ticket booth center foreground, stairway to auditorium right foreground. - Community Hall, Rainier Avenue & View Drive, Port Gamble, Kitsap County, WA

Influence of deep level intrinsic defects on the carrier transport in p-type Hg1- xCdxTe

NASA Astrophysics Data System (ADS)

Hoerstel, W.; Klimakow, A.; Kramer, R.

1990-04-01

The magnetic field dependence of the Hall effect in p-type Hg1- xCdxTe is analysed for determining the carrier densities and their mobilities in the mixed conduction range T = 70-250 K. A consistent description of the temperature dependence of the concentrations and mobilities of electrons and holes succeeds by taking into account energy-dependent momentum scattering times in the transport coefficients. Using this formalism, an energy level near 0.7 Eg above the valence band edge caused by intrinsic defects which were influenced by thermal treament is determined and discussed.

Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

PubMed Central

Maragliano, C.; Lilliu, S.; Dahlem, M. S.; Chiesa, M.; Souier, T.; Stefancich, M.

2014-01-01

In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution. A simple electronic energy model is used for correlating the contact potential difference with the doping concentration in the material. Limitations of this technique are discussed in details and some experimental solutions are proposed. Two-dimensional doping concentration images acquired on radio frequency-sputtered intrinsic zinc oxide thin films with different thickness and deposited under different conditions are reported. We show that results inferred with this technique are in accordance with carrier concentration expected for zinc oxide thin films deposited under different conditions and obtained from resistivity and mobility measurements. PMID:24569599

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

NASA Astrophysics Data System (ADS)

Tawara, T.; Matsunaga, S.; Fujimoto, T.; Ryo, M.; Miyazato, M.; Miyazawa, T.; Takenaka, K.; Miyajima, M.; Otsuki, A.; Yonezawa, Y.; Kato, T.; Okumura, H.; Kimoto, T.; Tsuchida, H.

2018-01-01

We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small (below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6-2.5 × 1016 cm-3 for diodes with a p-type epitaxial anode with various Al concentrations.

Observation of the quantum Hall effect in δ-doped SrTiO3

PubMed Central

Matsubara, Y.; Takahashi, K. S.; Bahramy, M. S.; Kozuka, Y.; Maryenko, D.; Falson, J.; Tsukazaki, A.; Tokura, Y.; Kawasaki, M.

2016-01-01

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems. PMID:27228903

Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency

PubMed Central

Yan, Yuli; Zhang, Guangbiao; Wang, Chao; Peng, Chengxiao; Zhang, Peihong; Wang, Yuanxu; Ren, Wei

2016-01-01

The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the calculated Seebeck coefficient with experimental values, we find that the low dopant solubility in this material is not conductive to achieve the optimum carrier concentration, leading a smaller experimental value of the maximum ZT. Interestingly, the calculated dopant formation energies suggest that optimum carrier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurations. Therefore, it might be possible to achieve a maximum ZT value of 1.45 at 1000 K with suitable dopants. These results provide a valuable theoretical guidance for the synthesis of high-performance bulk thermoelectric materials through dopants optimization. PMID:27406178

A novel diagnosis method for a Hall plates-based rotary encoder with a magnetic concentrator.

PubMed

Meng, Bumin; Wang, Yaonan; Sun, Wei; Yuan, Xiaofang

2014-07-31

In the last few years, rotary encoders based on two-dimensional complementary metal oxide semiconductors (CMOS) Hall plates with a magnetic concentrator have been developed to measure contactless absolute angle. There are various error factors influencing the measuring accuracy, which are difficult to locate after the assembly of encoder. In this paper, a model-based rapid diagnosis method is presented. Based on an analysis of the error mechanism, an error model is built to compare minimum residual angle error and to quantify the error factors. Additionally, a modified particle swarm optimization (PSO) algorithm is used to reduce the calculated amount. The simulation and experimental results show that this diagnosis method is feasible to quantify the causes of the error and to reduce iteration significantly.

Hall effects on unsteady MHD flow of second grade fluid through porous medium with ramped wall temperature and ramped surface concentration

NASA Astrophysics Data System (ADS)

VeeraKrishna, M.; Chamkha, Ali J.

2018-05-01

The heat generation/absorption and thermo-diffusion on an unsteady free convective MHD flow of radiating and chemically reactive second grade fluid near an infinite vertical plate through a porous medium and taking the Hall current into account have been studied. Assume that the bounding plate has a ramped temperature with a ramped surface concentration and isothermal temperature with a ramped surface concentration. The analytical solutions for the governing equations are obtained by making use of the Laplace transforms technique. The velocity, temperature, and concentration profiles are discussed through graphs. We also found that velocity, temperature, and concentration profiles in the case of ramped temperature with ramped surface concentrations are less than those of isothermal temperature with ramped surface concentrations. Also, the expressions of the skin friction, Nusselt number, and Sherwood number are obtained and represented computationally through a tabular form.

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

DOE PAGES

Lu, T. M.; Tracy, L. A.; Laroche, D.; ...

2017-06-01

We typically achieve Quantum Hall ferromagnetic transitions by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We also show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10 10 cm -2, this ratio grows greater than 1, resulting inmore » a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. For such gate-controlled spin-polarizations in the quantum Hall regime the door opens in order to realize Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.« less

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, T. M.; Tracy, L. A.; Laroche, D.

We typically achieve Quantum Hall ferromagnetic transitions by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We also show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10 10 cm -2, this ratio grows greater than 1, resulting inmore » a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. For such gate-controlled spin-polarizations in the quantum Hall regime the door opens in order to realize Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.« less

The influence of nitrogen implantation on the electrical properties of amorphous IGZO

NASA Astrophysics Data System (ADS)

Zhan, S. L.; Zhao, M.; Zhuang, D. M.; Fu, E. G.; Cao, M. J.; Guo, L.; Ouyang, L. Q.

2017-09-01

In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016 cm-3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93 cm2/V s with the subsequent decrease to 6.49 cm2/V s, which reflects the reduction of the average potential barrier height (φ0) to be 22.0 meV with subsequent increase to 74.8 meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.

Carrier Localization in Confined Vanadate Superlattices

NASA Astrophysics Data System (ADS)

Eaton, Craig; Zhang, Lei; Engel-Herbert, Roman

2015-03-01

Perovskite oxide heterostructures have attracted attention due to the wealth of phenomena emerging at the interface, as well as the presence of strong electron correlations with potential applications as active electronic material for logic application utilizing the metal-to-insulator transition. Successful monolithic integration of perovskite oxides with Si makes them an ideal material choice. Here we present the growth of cubic SrTiO3/SrVO3/SrTiO3 heterostructures on (La0.3Sr0.7) (Al0.65Ta0.35) O3 substrates and orthorhombically distorted CaTiO3/CaVO3/CaTiO3 heterostructures on (LaSrAlTa4) O3 substrates by hybrid molecular beam epitaxy, where alkaline earth metals were supplied using conventional effusion cells and the transition metals from the metal-organic precursor titanium-isopropoxide and vanadium oxi-tri-isopropoxide. Here, the interfaces are non-polar and carrier confinement in the correlated vanadate metals (d1 configuration, 1 electron per unit cell) is achieved using insulating titanates as barrier material. Growth challenges associated with optimizing conditions for cation and oxygen stoichiometry are discussed. Confined structures down to 2 ML have been studied to demonstrate the potential for tuning incipient 2D Mott transition from 3D correlated metal. Room temperature hall measurements revealed carrier concentration in SrVO3 films are 2 × 1022 cm-3 in thick films and decreases to 8 × 1020 cm-3 at 3 ML confinement, revealing the onset of strong carrier localization. Direct comparison between SrVO3 and CaVO3 structures are presented to elucidate the role of dimensional confinement and structural distortion.

Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.

2016-01-14

In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electronmore » currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.« less

Carrier dynamics and surface vibration-assisted Auger recombination in porous silicon

NASA Astrophysics Data System (ADS)

Zakar, Ammar; Wu, Rihan; Chekulaev, Dimitri; Zerova, Vera; He, Wei; Canham, Leigh; Kaplan, Andrey

2018-04-01

Excitation and recombination dynamics of the photoexcited charge carriers in porous silicon membranes were studied using a femtosecond pump-probe technique. Near-infrared pulses (800 nm, 60 fs) were used for the pump while, for the probe, we employed different wavelengths in the range between 3.4 and 5 μ m covering the medium wavelength infrared range. The data acquired in these experiments consist of simultaneous measurements of the transmittance and reflectance as a function of the delay time between the pump and probe for different pump fluences and probe wavelengths. To evaluate the results, we developed an optical model based on the two-dimensional Maxwell-Garnett formula, incorporating the free-carrier Drude contribution and nonuniformity of the excitation by the Wentzel-Kramers-Brillouin model. This model allowed the retrieval of information about the carrier density as a function of the pump fluence, time, and wavelength. The carrier density data were analyzed to reveal that the recombination dynamics is governed by Shockley-Read-Hall and Auger processes, whereas the diffusion has an insignificant contribution. We show that, in porous silicon samples, the Auger recombination process is greatly enhanced at the wavelength corresponding to the infrared-active vibrational modes of the molecular impurities on the surface of the pores. This observation of surface-vibration-assisted Auger recombination is not only for porous silicon in particular, but for low-dimension and bulk semiconductors in general. We estimate the time constants of Shockley-Read-Hall and Auger processes, and demonstrate their wavelength dependence for the excited carrier density in the range of 1018-10191 /cm3 . We demonstrate that both processes are enhanced by up to three orders of magnitude with respect to the bulk counterpart. In addition, we provide a plethora of the physical parameters evaluated from the experimental data, such as the dielectric function and its dependence on the

Concert hall acoustics

NASA Astrophysics Data System (ADS)

Schroeder, Manfred

2004-05-01

I will review some work at Bell Laboratories on artificial reverberation and concert hall acoustics including Philharmonic Hall (Lincoln Center for the Performing Arts, New York). I will also touch on sound diffusion by number-theoretic surfaces and the measurement of reverberation time using the music as played in the hall as a ``test'' signal.

Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods

PubMed Central

Watanabe, Kentaro; Nagata, Takahiro; Oh, Seungjun; Wakayama, Yutaka; Sekiguchi, Takashi; Volk, János; Nakamura, Yoshiaki

2016-01-01

Future one-dimensional electronics require single-crystalline semiconductor free-standing nanorods grown with uniform electrical properties. However, this is currently unrealistic as each crystallographic plane of a nanorod grows at unique incorporation rates of environmental dopants, which forms axial and lateral growth sectors with different carrier concentrations. Here we propose a series of techniques that micro-sample a free-standing nanorod of interest, fabricate its arbitrary cross-sections by controlling focused ion beam incidence orientation, and visualize its internal carrier concentration map. ZnO nanorods are grown by selective area homoepitaxy in precursor aqueous solution, each of which has a (0001):+c top-plane and six {1–100}:m side-planes. Near-band-edge cathodoluminescence nanospectroscopy evaluates carrier concentration map within a nanorod at high spatial resolution (60 nm) and high sensitivity. It also visualizes +c and m growth sectors at arbitrary nanorod cross-section and history of local transient growth events within each growth sector. Our technique paves the way for well-defined bottom-up nanoelectronics. PMID:26881966

CONCENTRATION AND DECONTAMINATION OF SOLUTIONS CONTAINING PLUTONIUM VALUES BY BISMUTH PHOSPHATE CARRIER PRECIPITATION METHODS

DOEpatents

Seaborg, G.T.; Thompson, S.G.

1960-08-23

A process is given for isolating plutonium present in the tetravalent state in an aqueous solution together with fission products. First, the plutonium and fission products are coprecipitated on a bismuth phosphate carrier. The precipitate obtained is dissolved, and the plutonium in the solution is oxidized to the hexavalent state (with ceric nitrate, potassium dichromate, Pb/ sub 3/O/sub 4/, sodium bismuthate and/or potassium dichromate). Thereafter a carrier for fission products is added (bismuth phosphate, lanthanum fluoride, ceric phosphate, bismuth oxalate, thorium iodate, or thorium oxalate), and the fission-product precipitation can be repeated with one other of these carriers. After removal of the fission-product-containing precipitate or precipitates. the plutonium in the supernatant is reduced to the tetravalent state (with sulfur dioxide, hydrogen peroxide. or sodium nitrate), and a carrier for tetravalent plutonium is added (lanthanum fluoride, lanthanum hydroxide, lanthanum phosphate, ceric phosphate, thorium iodate, thorium oxalate, bismuth oxalate, or niobium pentoxide). The plutonium-containing precipitate is then dissolved in a relatively small volume of liquid so as to obtain a concentrated solution. Prior to dissolution, the bismuth phosphate precipitates first formed can be metathesized with a mixture of sodium hydroxide and potassium carbonate and plutonium-containing lanthanum fluorides with alkali-metal hydroxide. In the solutions formed from a plutonium-containing lanthanum fluoride carrier the plutonium can be selectively precipitated with a peroxide after the pH was adjusted preferably to a value of between 1 and 2. Various combinations of second, third, and fourth carriers are discussed.

Topological Defects in Double Exchange Materials and Anomalous Hall Resistance.

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Brey, L.

2000-03-01

Recently it has been proposed that the anomalous Hall effect observed in Double Exchange materials is due to Berry phase effects caused by carrier hopping in a nontrivial spins background (J.Ye et al.) Phys.Rev.Lett. 83, 3737 1999.In order to study this possibility we have performed Monte Carlo simulations of the Double Exchange model and we have computed, as a function of the temperature, the number of topological defects in the system and the internal gauge magnetic field associated with these defects. In the simplest Double Exchange model the gauge magnetic field is random, and its average value is zero. The inclusion in the problem of spin-orbit coupling privileges the opposite direction of the magnetization and an anomalous Hall resistance (AHR) effect arises. We have computed the AHR, and we have obtained its temperature dependence. In agreement with previous experiments we obtain that AHR increases exponentially at low temperature and presents a maximum at a temperature slightly higher than the critical temperature.

CONCENTRATION OF Pu USING OXALATE TYPE CARRIER

DOEpatents

Ritter, D.M.; Black, R.P.S.

1960-04-19

A method is given for dissolving and reprecipitating an oxalate carrier precipitate in a carrier precipitation process for separating and recovering plutonium from an aqueous solution. Uranous oxalate, together with plutonium being carried thereby, is dissolved in an aqueous alkaline solution. Suitable alkaline reagents are the carbonates and oxulates of the alkali metals and ammonium. An oxidizing agent selected from hydroxylamine and hydrogen peroxide is then added to the alkaline solution, thereby oxidizing uranium to the hexavalent state. The resulting solution is then acidified and a source of uranous ions provided in the acidified solution, thereby forming a second plutoniumcarrying uranous oxalate precipitate.

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru; Fadeev, M. A.; Morozov, S. V.

2016-12-15

The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measuredmore » carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.« less

Hall effects on peristaltic flow of couple stress fluid in a vertical asymmetric channel

NASA Astrophysics Data System (ADS)

Maninaga Kumar, P.; Kavitha, A.; Saravana, R.

2017-11-01

The influence of Hall effect on peristaltic transport of a couple stress fluid in a vertical asymmetric channel is examined. The problem is solved under the assumptions of low Reynolds number and long wavelength. The velocity, temperature and concentration are obtained by using analytical solutions. Effect of Hall parameter, couple stress fluid parameter, Froude number, Hartmann number and the phase difference on the pumping characteristics, temperature and concentration are discussed graphically.

Hall effect within the colossal magnetoresistive semimetallic state of MoTe2

NASA Astrophysics Data System (ADS)

Zhou, Qiong; Rhodes, D.; Zhang, Q. R.; Tang, S.; Schönemann, R.; Balicas, L.

2016-09-01

Here, we report a systematic study on the Hall effect of the semimetallic state of bulk MoTe2, which was recently claimed to be a candidate for a novel type of Weyl semimetallic state. The temperature (T ) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and nonsaturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below T ˜40 K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase transition around this temperature.

Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

1976-09-01

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

Large magnetoresistance and Hall effect in paramagnetic black phosphorus synthesized from red phosphorus

NASA Astrophysics Data System (ADS)

Jiang, X. H.; Xiong, F.; Zhang, X. W.; Hua, Z. H.; Wang, Z. H.; Yang, S. G.

2018-05-01

Black phosphorus (BP) is an important material, which can be used in the fabrication of phosphorene. In this manuscript, a systematic study was described on the high-pressure synthesis of BP from red phosphorus. For physical characterization, the bulk BP was synthesized under the high pressure of 1.6 GPa and high temperature of 700 °C for 2 h. X-ray diffraction and Raman studies illustrated the formation of high-quality pure phase pleomorphic BP. A nonlinear Hall effect was observed in the BP sample. Magnetoresistance (MR) in the bulk BP reached 90% at 40 K, and positive-to-negative crossover in MR was measured. A paramagnetic feature was found in the prepared bulk BP, and the MR results were attributed to the combination of the effect of classical resistor network and magnetic polaron. The conduction tensors were analyzed by a two-band model to determine the carrier concentration and mobility at several temperatures.

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

DOE PAGES

Serafini, John; Akbas, Yunus; Crandall, Lucas; ...

2016-03-02

Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping;more » while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.« less

Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

DTIC Science & Technology

1993-05-30

shown in Figures 9a and 9b. The carrier concentration was computed from the measured values of the Hall coefficient, RH , using the equation n (5) eRH...The electron concentrations in Figure 1 were calculated from the expression 1 (1) eRjj where RH is the Hall constant. Equation (1) assumes electron...expressions: 2 2RH fcP + ,’dP• (2) RH = (ncp + nd/pd) 2 e 1 p 1 (3) ncelc + ndel.d where nc and nd are the concentrations of conducting carriers in the

Tuning the thermoelectric properties of A-site deficient SrTiO3 ceramics by vacancies and carrier concentration.

PubMed

Srivastava, Deepanshu; Norman, Colin; Azough, Feridoon; Schäfer, Marion C; Guilmeau, Emmanuel; Kepaptsoglou, Demie; Ramasse, Quentin M; Nicotra, Giuseppe; Freer, Robert

2016-09-29

Ceramics based on Sr 0.8 La 0.067 Ti 0.8 Nb 0.2 O 3-δ have been prepared by the mixed oxide route. The La 1/3 NbO 3 component generates ∼13.4% A-site vacancies; this was fixed for all samples. Powders were sintered under air and reducing conditions at 1450 to 1700 K; products were of high density (>90% theoretical). Processing under reducing conditions led to the formation of a Ti 1-x Nb x O 2-y second phase, core-shell structures and oxygen deficiency. X-ray diffraction (XRD) confirmed a simple cubic structure with space group Pm3[combining macron]m. Transmission electron microscopy revealed a high density of dislocations while analytical scanning transmission electron microscopy at atomic resolution demonstrated a uniform distribution of La, Nb and vacancies in the lattice. X-ray photoemission spectroscopy and thermogravimetry showed the oxygen deficiency (δ value) to be ∼0.08 in reduced samples with enhanced carrier concentrations ∼2 × 10 21 cm -3 . Both carrier concentration and carrier mobility increased with sintering time, giving a maximum figure of merit (ZT) of 0.25. Selective additional doping by La or Nb, with no additional A site vacancies, led to the creation of additional carriers and reduced electrical resistivity. Together these led to enhanced ZT values of 0.345 at 1000 K. The contributions from oxygen vacancies and charge carriers have been investigated independently.

Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

NASA Astrophysics Data System (ADS)

Ndiaye, Papa Birame; Akosa, Collins; Manchon, Aurelien; Spintronics Theory Group Team

We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic approximation still holds for large skyrmions as well as for few atomic size-nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that topological Hall effect is highly sensitive to momentum scattering. This work was supported by the King Abdullah University of Science and Technology (KAUST) through the Award No OSR-CRG URF/1/1693-01 from the Office of Sponsored Research (OSR).

The influence of selective chemical doping on clean, low-carrier density SiC epitaxial graphene

NASA Astrophysics Data System (ADS)

Chuang, Chiashain; Yang, Yanfei; Huang, Lung-I.; Liang, Chi-Te; Elmquist, Randolph E.; National Institute of of Standards; Technology Collaboration; National Taiwan University, Department of Physics Collaboration

2015-03-01

The charge-transfer effect of ambient air on magneto-transport in polymer-free SiC graphene was investigated. Interestingly, adsorption of atmospheric gas molecules on clean epitaxial graphene can reduce the carrier density to near charge neutrality, allowing observation of highly precise v = 2 quantum Hall plateaus. The atmospheric adsorbates were reproducibly removed and pure gases (N2, O2, CO2, H2O) were used to form new individual adsorbates on SiC graphene. Our experimental results (τt/τq ~ 2) support the theoretical predictions for the ratio of transport relaxation time τt to quantum lifetime τq in clean graphene. The analysis of Shubnikov-de Haas oscillations at intermediate doping levels indicates that the carrier scattering is reduced by water and oxygen so as to increase both the classical and quantum mobility. This study points to the key dopant gases in ambient air and also paves the way towards extremely precise quantized Hall resistance standards in epitaxial graphene systems with carrier density tuned by exposure to highly pure gases and vacuum annealing treatment. National Institute of Standard and Technology.

Facility Focus: Residence Halls.

ERIC Educational Resources Information Center

College Planning & Management, 2002

2002-01-01

Describes residence halls seeking to meet needs beyond traditional mass housing for the 18- to 22-year-old students: Whittemore Hall at the Tuck School of Business at Dartmouth College (for older students); Small Group Housing at Washington University (grouping students with common interests); and the renovation of the residence hall at Boston's…

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Scott D. Altman, second from left, is inducted into the Astronaut Hall of Fame (AHOF) during a ceremony inside the Space Shuttle Atlantis attraction at NASA's Kennedy Space Center Visitor Complex in Florida. At far left, Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation (ASF), inducts Altman into the Hall of Fame Class of 2018. At right is Hall of Famer John Grunsfeld, who spoke on Altman's behalf during the ceremony. At far right is Thomas D. Jones, Ph.D., who also was inducted into the AHOF Class of 2018. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Thomas D. Jones, Ph.D., in the center, is inducted into the Astronaut Hall of Fame (AHOF) during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. At left, Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation (ASF), inducts Jones into the Hall of Fame Class of 2018. At right is Hall of Famer Storey Musgrave, who spoke on Jones behalf during the ceremony. Also inducted was retired astronaut Scott D. Altman. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

NASA's 2004 Hall Thruster Program

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

2004-01-01

An overview of NASA's Hall thruster research and development tasks conducted during fiscal year 2004 is presented. These tasks focus on: raising the technology readiness level of high power Hall thrusters, developing a moderate-power/ moderate specific impulse Hall thruster, demonstrating high-power/high specific impulse Hall thruster operation, and addressing the fundamental technical challenges of emerging Hall thruster concepts. Programmatic background information, technical accomplishments and out year plans for each program element performed under the sponsorship of the In-Space Transportation Program, Project Prometheus, and the Energetics Project are provided.

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boieriu, P.; Grein, C.H.; Velicu, S.

2006-02-06

We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions.

Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet Ti2MnAl

NASA Astrophysics Data System (ADS)

Shi, Wujun; Muechler, Lukas; Manna, Kaustuv; Zhang, Yang; Koepernik, Klaus; Car, Roberto; van den Brink, Jeroen; Felser, Claudia; Sun, Yan

2018-02-01

We predict a magnetic Weyl semimetal in the inverse Heusler Ti2MnAl , a compensated ferrimagnet with a vanishing net magnetic moment and a Curie temperature of over 650 K. Despite the vanishing net magnetic moment, we calculate a large intrinsic anomalous Hall effect (AHE) of about 300 S/cm. It derives from the Berry curvature distribution of the Weyl points, which are only 14 meV away from the Fermi level and isolated from trivial bands. Different from antiferromagnets Mn3X (X =Ge , Sn, Ga, Ir, Rh, and Pt), where the AHE originates from the noncollinear magnetic structure, the AHE in Ti2MnAl stems directly from the Weyl points and is topologically protected. The large anomalous Hall conductivity (AHC) together with a low charge carrier concentration should give rise to a large anomalous Hall angle. In contrast to the Co-based ferromagnetic Heusler compounds, the Weyl nodes in Ti2MnAl do not derive from nodal lines due to the lack of mirror symmetries in the inverse Heusler structure. Since the magnetic structure breaks spin-rotation symmetry, the Weyl nodes are stable without SOC. Moreover, because of the large separation between Weyl points of opposite topological charge, the Fermi arcs extent up to 75 % of the reciprocal lattice vectors in length. This makes Ti2MnAl an excellent candidate for the comprehensive study of magnetic Weyl semimetals. It is the first example of a material with Weyl points, large anomalous Hall effect, and angle despite a vanishing net magnetic moment.

Characterization of Cross-Linked Porous Gelatin Carriers and Their Interaction with Corneal Endothelium: Biopolymer Concentration Effect

PubMed Central

Lai, Jui-Yang; Ma, David Hui-Kang; Lai, Meng-Heng; Li, Ya-Ting; Chang, Ren-Jie; Chen, Li-Mei

2013-01-01

Cell sheet-mediated tissue regeneration is a promising approach for corneal reconstruction. However, the fragility of bioengineered corneal endothelial cell (CEC) monolayers allows us to take advantage of cross-linked porous gelatin hydrogels as cell sheet carriers for intraocular delivery. The aim of this study was to further investigate the effects of biopolymer concentrations (5–15 wt%) on the characteristic and safety of hydrogel discs fabricated by a simple stirring process combined with freeze-drying method. Results of scanning electron microscopy, porosity measurements, and ninhydrin assays showed that, with increasing solid content, the pore size, porosity, and cross-linking index of carbodiimide treated samples significantly decreased from 508±30 to 292±42 µm, 59.8±1.1 to 33.2±1.9%, and 56.2±1.6 to 34.3±1.8%, respectively. The variation in biopolymer concentrations and degrees of cross-linking greatly affects the Young’s modulus and swelling ratio of the gelatin carriers. Differential scanning calorimetry measurements and glucose permeation studies indicated that for the samples with a highest solid content, the highest pore wall thickness and the lowest fraction of mobile water may inhibit solute transport. When the biopolymer concentration is in the range of 5–10 wt%, the hydrogels have high freezable water content (0.89–0.93) and concentration of permeated glucose (591.3–615.5 µg/ml). These features are beneficial to the in vitro cultivation of CECs without limiting proliferation and changing expression of ion channel and pump genes such as ATP1A1, VDAC2, and AQP1. In vivo studies by analyzing the rabbit CEC morphology and count also demonstrate that the implanted gelatin discs with the highest solid content may cause unfavorable tissue-material interactions. It is concluded that the characteristics of cross-linked porous gelatin hydrogel carriers and their triggered biological responses are in relation to biopolymer concentration

Extreme Soft Limit Observation of Quantum Hall Effect in a 3-d Semiconductor

NASA Astrophysics Data System (ADS)

Bleiweiss, Michael; Yin, Ming; Amirzadeh, Jafar; Preston, Harry; Datta, Timir

2004-03-01

We report on the evidence for quantum hall effect at 38K and in magnetic fields (B) as low as 1k-Orsted. Our specimens were semiconducting, carbon replica opal (CRO) structures. CRO are three dimensional bulk systems where the carbon is grown by CVD into the porous regions in artificial silica opals. The carbon forms layers on top of the silica spheres as eggshells. The shells are of uneven thickness and are perforated at the contacts points of the opal spheres and form a closed packed, three dimensional crystal structure. Plateaus in inverse R_xy that are conjugated with well-defined Subnikov-deHass modulations in R_xx were observed. The quantum steps that are particularly prominent were the states with fill factors v = p/q (p,q are integers) were the well know fractions, 1/3, 1/2, 3/5, 1 and 5/2. QHE steps indicate that the carriers are localized in two-dimensional regions, which may be due to the extremely large surface to volume ratio associated with replica opal structure. From the B-1 vs v straight line, the effective surface carrier density, ns = 2.2 x 10^14 m-2. To the best of our knowledge, the current work is the first to report fractional quantum hall plateaus in a bulk system.

Drug composition matters: the influence of carrier concentration on the radiochemical purity, hydroxyapatite affinity and in-vivo bone accumulation of the therapeutic radiopharmaceutical 188Rhenium-HEDP.

PubMed

Lange, R; de Klerk, J M H; Bloemendal, H J; Ramakers, R M; Beekman, F J; van der Westerlaken, M M L; Hendrikse, N H; Ter Heine, R

2015-05-01

(188)Rhenium-HEDP is an effective bone-targeting therapeutic radiopharmaceutical, for treatment of osteoblastic bone metastases. It is known that the presence of carrier (non-radioactive rhenium as ammonium perrhenate) in the reaction mixture during labeling is a prerequisite for adequate bone affinity, but little is known about the optimal carrier concentration. We investigated the influence of carrier concentration in the formulation on the radiochemical purity, in-vitro hydroxyapatite affinity and the in-vivo bone accumulation of (188)Rhenium-HEDP in mice. The carrier concentration influenced hydroxyapatite binding in-vitro as well as bone accumulation in-vivo. Variation in hydroxyapatite binding with various carrier concentrations seemed to be mainly driven by variation in radiochemical purity. The in-vivo bone accumulation appeared to be more complex: satisfactory radiochemical purity and hydroxyapatite affinity did not necessarily predict acceptable bio-distribution of (188)Rhenium-HEDP. For development of new bisphosphonate-based radiopharmaceuticals for clinical use, human administration should not be performed without previous animal bio-distribution experiments. Furthermore, our clinical formulation of (188)Rhenium-HEDP, containing 10 μmol carrier, showed excellent bone accumulation that was comparable to other bisphosphonate-based radiopharmaceuticals, with no apparent uptake in other organs. Radiochemical purity and in-vitro hydroxyapatite binding are not necessarily predictive of bone accumulation of (188)Rhenium-HEDP in-vivo. The formulation for (188)Rhenium-HEDP as developed by us for clinical use exhibits excellent bone uptake and variation in carrier concentration during preparation of this radiopharmaceutical should be avoided. Copyright © 2015 Elsevier Inc. All rights reserved.

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

NASA Astrophysics Data System (ADS)

Glunk, M.; Daeubler, J.; Schoch, W.; Sauer, R.; Limmer, W.

2009-09-01

We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σxy(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from σxy(AH)=20Ω-1cm-1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σxy(AH)∝σxx1.6 for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

Influence of carrier concentration on the performance of CIAS solar cell

NASA Astrophysics Data System (ADS)

Patel, Kinjal; Ray, Jaymin

2018-05-01

Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A.

2016-06-15

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, ismore » obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.« less

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Pavlidis, Dimitris; Shi, Junxia

2018-02-01

The illumination of a single-layer transition metal dichalcogenide with an elliptically polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the valley edges, K and K' . This rate with a linear dependence on the beam ellipticity and inverse of the optical gap manifests as an asymmetric Fermi distribution between the valleys or a non-equilibrium population which under an external field and a Berry curvature induced anomalous velocity, results in an externally tunable finite valley Hall current. Surface imperfections that influence the excitation rates are included through the self-consistent Born approximation. Further, we describe applications centered around circular dichroism, quantum computing, and spin torque via optically excited spin currents within the framework of the suggested formalism. A closing summary points to the possibility of extending the calculations to composite charged particles like trions. The role of the substrate in renormalizing the fundamental band gap and moderating the valley Hall current is also discussed.

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-03-01

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida, two space explorers, Scott D. Altman, second from left, and Thomas D. Jones, Ph.D., far right, are inducted into the U.S. Astronaut Hall of Fame Class of 2018. At far left is Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation, who inducted Altman and Jones into the AHOF. Second from right is Hall of Famer John Grunsfeld, who spoke on behalf of Altman during the ceremony. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Intrinsic quantum anomalous Hall effect in the kagome lattice Cs 2LiMn 3F 12

DOE PAGES

Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

2015-10-27

In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs 2Mn 3F 12 kagome lattice and on the (001) surface of a Cs 2LiMn 3F 12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding modelmore » based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.« less

NASA's Hall Thruster Program 2002

NASA Technical Reports Server (NTRS)

Jankovsky, Robert S.; Jacobson, David T.; Pinero, Luis R.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

2002-01-01

The NASA Hall thruster program currently supports a number of tasks related to high power thruster development for a number of customers including the Energetics Program (formerly called the Space-based Program), the Space Solar Power Program, and the In-space Propulsion Program. In program year 2002, two tasks were central to the NASA Hall thruster program: 1) the development of a laboratory Hall thruster capable of providing high thrust at high power-, and 2) investigations into operation of Hall thrusters at high specific impulse. In addition to these two primary thruster development activities, there are a number of other on-going activities supported by the NASA Hall thruster program. These additional activities are related to issues such as high-power power processor architecture, thruster lifetime, and spacecraft integration.

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

2002-02-01

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

Not your grandfather's concert hall

NASA Astrophysics Data System (ADS)

Cooper, Russell; Malenka, Richard; Griffith, Charles; Friedlander, Steven

2004-05-01

The opening of Judy and Arthur Zankel Hall on 12 September 2003, restores Andrew Carnegie's original 1891 concept of having three outstanding auditoriums of different sizes under one roof, and creates a 21st-century venue for music performance and education. With concerts ranging from early music to avant-garde multimedia productions, from jazz to world music, and from solo recitals to chamber music, Zankel Hall expands the breadth and depth of Carnegie Hall's offerings. It allows for the integration of programming across three halls with minifestivals tailored both to the size and strengths of each hall and to the artists and music to be performed. The new flexible space also provides Carnegie Hall with an education center equipped with advanced communications technology. This paper discusses the unique program planned for this facility and how the architects, theatre consultants, and acousticians developed a design that fulfilled the client's expectations and coordinated the construction of the facility under the floor of the main Isaac Stern Auditorium without having to cancel a single performance.

Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

NASA Astrophysics Data System (ADS)

Keswani, Neeti; Nakajima, Yoshikata; Chauhan, Neha; Kumar, Sakthi; Ohno, H.; Das, Pintu

2018-05-01

In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

Magnetic bilayer-skyrmions without skyrmion Hall effect

NASA Astrophysics Data System (ADS)

Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

2016-01-01

Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

NASA's Hall Thruster Program

NASA Technical Reports Server (NTRS)

Jankovsky, Robert S.; Jacobson, David T.; Rawlin, Vincent K.; Mason, Lee S.; Mantenieks, Maris A.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

2001-01-01

NASA's Hall thruster program has base research and focused development efforts in support of the Advanced Space Transportation Program, Space-Based Program, and various other programs. The objective of the base research is to gain an improved understanding of the physical processes and engineering constraints of Hall thrusters to enable development of advanced Hall thruster designs. Specific technical questions that are current priorities of the base effort are: (1) How does thruster life vary with operating point? (2) How can thruster lifetime and wear rate be most efficiently evaluated? (3) What are the practical limitations for discharge voltage as it pertains to high specific impulse operation (high discharge voltage) and high thrust operation (low discharge voltage)? (4) What are the practical limits for extending Hall thrusters to very high input powers? and (5) What can be done during thruster design to reduce cost and integration concerns? The objective of the focused development effort is to develop a 50 kW-class Hall propulsion system, with a milestone of a 50 kW engineering model thruster/system by the end of program year 2006. Specific program wear 2001 efforts, along with the corporate and academic participation, are described.

Spin Hall effects

NASA Astrophysics Data System (ADS)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Tunneling Anomalous and Spin Hall Effects.

PubMed

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

2015-02-14

We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

Development Status of the Helicon Hall Thruster

DTIC Science & Technology

2009-09-15

Hall thruster , the Helicon Hall Thruster , is presented. The Helicon Hall Thruster combines the efficient ionization mechanism of a helicon source with the favorable plasma acceleration properties of a Hall thruster . Conventional Hall thrusters rely on direct current electron bombardment to ionize the flow in order to generate thrust. Electron bombardment typically results in an ionization cost that can be on the order of ten times the ionization potential, leading to reduced efficiency, particularly at low

Effective g-factors of carriers in inverted InAs/GaSb bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Xiaoyang; Collaborative Innovation Center of Quantum Matter, Beijing 100871; Sullivan, Gerard

2016-01-04

We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor ofmore » less than 3.« less

A non-invasive Hall current distribution measurement system for Hall Effect thrusters

NASA Astrophysics Data System (ADS)

Mullins, Carl Raymond

A direct, accurate method to measure thrust produced by a Hall Effect thruster on orbit does not currently exist. The ability to calculate produced thrust will enable timely and precise maneuvering of spacecraft---a capability particularly important to satellite formation flying. The means to determine thrust directly is achievable by remotely measuring the magnetic field of the thruster and solving the inverse magnetostatic problem for the Hall current density distribution. For this thesis, the magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned outside the channel of a 1.5 kW Colorado State University Hall thruster equipped with a center-mounted electride cathode. In this location, the static magnetic field is approximately 30 Gauss, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is greater than tens of milligauss, which is within the sensitivity range of the TMR sensors. Due to the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field along with a non-negativity constraint and a zero boundary condition provides current density distributions. Our system measures the sensor outputs at 2 MHz allowing the determination of the Hall current density distribution as a function of time. These data are shown in contour plots in sequential frames. The measured ratios between the average Hall current and the discharge current ranged from 0.1 to 10 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 2.0 kW exhibited a breathing mode of 37 kHz, which was in agreement with temporal measurements of the discharge current.

Hall viscosity of hierarchical quantum Hall states

NASA Astrophysics Data System (ADS)

Fremling, M.; Hansson, T. H.; Suorsa, J.

2014-03-01

Using methods based on conformal field theory, we construct model wave functions on a torus with arbitrary flat metric for all chiral states in the abelian quantum Hall hierarchy. These functions have no variational parameters, and they transform under the modular group in the same way as the multicomponent generalizations of the Laughlin wave functions. Assuming the absence of Berry phases upon adiabatic variations of the modular parameter τ, we calculate the quantum Hall viscosity and find it to be in agreement with the formula, given by Read, which relates the viscosity to the average orbital spin of the electrons. For the filling factor ν =2/5 Jain state, which is at the second level in the hierarchy, we compare our model wave function with the numerically obtained ground state of the Coulomb interaction Hamiltonian in the lowest Landau level, and find very good agreement in a large region of the complex τ plane. For the same example, we also numerically compute the Hall viscosity and find good agreement with the analytical result for both the model wave function and the numerically obtained Coulomb wave function. We argue that this supports the notion of a generalized plasma analogy that would ensure that wave functions obtained using the conformal field theory methods do not acquire Berry phases upon adiabatic evolution.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Kelvin Manning, associate director of NASA's Kennedy Space Center in Florida, welcomes guests to the 2018 U.S. Astronaut Hall of Fame (AHOF) Induction inside the Space Shuttle Atlantis attraction at the Kennedy Space Center Visitor Complex (KSCVC). Two veteran space explorers were inducted into the Hall of Fame Class of 2018. They are Scott D. Altman and Thomas D. Jones, Ph.D. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Former astronauts and space explorers Scott D. Altman, at left, and Thomas D. Jones, Ph.D., are inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They unveiled their plaques, which will be placed in Hall of Fame at the visitor complex. At far right is Master of Ceremonies, John Zarella, former CNN space correspondent. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Former astronauts and space explorers Scott D. Altman, at left, and Thomas D. Jones, Ph.D., are inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They unveiled their plaques, which will be placed in the Hall of Fame at the visitor complex. At far right is Master of Ceremonies, John Zarella, former CNN space correspondent. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Characterization of naproxen-loaded solid SMEDDSs prepared by spray drying: the effect of the polysaccharide carrier and naproxen concentration.

PubMed

Čerpnjak, Katja; Zvonar, Alenka; Vrečer, Franc; Gašperlin, Mirjana

2015-05-15

The purpose of this study was to prepare solid SMEDDS (sSMEDDS) particles produced by spray-drying using maltodextrin (MD), hypromellose (HPMC), and a combination of the two as a solid carrier. Naproxen (NPX) as the model drug was dissolved (at 6% concentration) or partially suspended (at 18% concentration) in a liquid SMEDDS composed of Miglyol(®) 812, Peceol™, Gelucire(®) 44/14, and Solutol(®) HS 15. Among the sSMEDDSs tested, the MD-based sSMEDDSs (with a granular, smooth-surfaced, microspherical appearance) preserved the self-microemulsifying properties of liquid SMEDDSs and exhibited dissolution profiles similar to those of liquid SMEDDSs, irrespective of the concentration of NPX. In contrast, HPMC-based sSMEDDSs (irregular-shaped microparticles) exhibited slightly prolonged release times due to the polymeric nature of the carrier. Differential scanning calorimetry (DSC), X-ray powder diffraction (XRPD), and Raman mapping analysis confirmed molecularly dissolved NPX (at 6% of drug loading), whereas at 18% NPX loading drug is partially molecularly dissolved and partially in the crystalline state. Copyright © 2015. Published by Elsevier B.V.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Covariant Conservation Laws and the Spin Hall Effect in Dirac-Rashba Systems

NASA Astrophysics Data System (ADS)

Milletarı, Mirco; Offidani, Manuel; Ferreira, Aires; Raimondi, Roberto

2017-12-01

We present a theoretical analysis of two-dimensional Dirac-Rashba systems in the presence of disorder and external perturbations. We unveil a set of exact symmetry relations (Ward identities) that impose strong constraints on the spin dynamics of Dirac fermions subject to proximity-induced interactions. This allows us to demonstrate that an arbitrary dilute concentration of scalar impurities results in the total suppression of nonequilibrium spin Hall currents when only Rashba spin-orbit coupling is present. Remarkably, a finite spin Hall conductivity is restored when the minimal Dirac-Rashba model is supplemented with a spin-valley interaction. The Ward identities provide a systematic way to predict the emergence of the spin Hall effect in a wider class of Dirac-Rashba systems of experimental relevance and represent an important benchmark for testing the validity of numerical methodologies.

A tale of two sites: On defining the carrier concentration in garnet-based ionic conductors for advanced Li batteries

DOE PAGES

Thompson, Travis; Sharafi, Asma; Johannes, Michelle D.; ...

2015-03-21

Solid electrolytes based on the garnet crystal structure have recently been identified as a promising material to enable advance Li battery cell chemistries because of the unprecedented combination of high ionic conductivity and electrochemical stability against metallic Li. To better understand the mechanisms that give rise to high conductivity, the goal of this work is to correlate Li site occupancy with Li-ion transport. Toward this goal, the Li site occupancy is studied in cubic garnet as a function of Li concentration over the compositions range: Li 7-xLa 3Zr 2-xTa xO 12 (x = 0.5, 0.75, and 1.5). The distribution ofmore » Li between the two interstitial sites (24d and 96h) is determined using neutron and synchrotron diffraction. The bulk conductivity is measured on >97% relative density polycrystalline specimens to correlate Li-ion transport as a function of Li site occupancy. It is determined that the conductivity changes nonlinearly with the occupancy of the octahedral (96h) Li site. It is shown that the effective carrier concentration is dependent on the Li site occupancy and suggests that this is a consequence of significant carrier-carrier coulombic interactions. Moreover, the observation of maximum conductivity near Li = 6.5 mol is explained.« less

Semiclassical theory of Hall viscosity

NASA Astrophysics Data System (ADS)

Biswas, Rudro

2014-03-01

Hall viscosity is an intriguing stress response in quantum Hall systems and is predicted to be observable via the conductivity in an inhomogeneous electric field. This has been studied extensively using a range of techniques, such as adiabatic transport, effective field theories, and Kubo formulae. All of these are, however, agnostic as to the distinction between strongly correlated quantum Hall states and non-interacting ones, where the effect arises due to the fundamental non-commuting nature of velocities and orbit positions in a magnetic field. In this talk I shall develop the semiclassical theory of quantized cyclotron orbits drifting in an applied inhomogeneous electric field and use it to provide a clear physical picture of how single particle properties in a magnetic field contribute to the Hall viscosity-dependence of the conductivity.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Magneto-transport Properties Using Top-Gated Hall Bars of Epitaxial Heterostructures on Single-Crystal SiGe Nanomembranes

NASA Astrophysics Data System (ADS)

Jacobson, R. B.; Li, Yize; Foote, Ryan; Cui, Xiaorui; Savage, Donald; Sookchoo, Pornsatit; Eriksson, Mark; Lagally, Max

2014-03-01

A high-quality 2-dimensional electron gas (2DEG) is crucial for quantum electronics and spintronics. Grown heterostructures on SiGe nanomembranes (NMs) show promise to create these 2DEG structures because they have reduced strain inhomogeneities and mosaic tilt. We investigate charge transport properties of these SiGe NMs/heterostructures over a range of temperatures and compare them with results from heterostructures grown on compositionally graded SiGe substrates. Measurements are done by creating Hall bars with top gates on the samples. From the magneto-transport data, low-carrier-density mobility values are calculated. Initial results on the grown heterostructures give a typical curve for mobility versus carrier density, but extraction of the zero-carrier-density mobility is dependent on the curve-fitting technique. Sponsored by United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.

Tuning charge transport in pentacene thin-film transistors using the strain-induced electron-phonon coupling modification

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Chang, Hsing-Cheng; Liu, Day-Shan

2015-03-01

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron-phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron-phonon coupling modification that results from the contribution of long-lifetime electron trapping.

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

NASA Astrophysics Data System (ADS)

Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

2018-01-01

The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Jefferson Lab Experimental Hall C

NASA Astrophysics Data System (ADS)

Carlini, Roger D.

1996-10-01

Jefferson Lab's Hall C went into initial operation in November 1995. The hall has a short orbit spectrometer (SOS) for short-lived particles such as pions and kaons and a high-momentum spectrometer (HMS) usually used for electrons. The SOS can also be used for protons. The HMS can range to 7 GeV/c. Both the SOS and HMS have typical resolutions of (10-3). Experiments for this hall range from measuring the neutron electric form factor, to color transparency, to creating strange nuclei. This paper will present the optical capabilities of the spectrometers, the parameters of the detection systems, and the overall beam line characteristics of the hall as determined from the results from the recent physics experiments along with the upcoming experimental schedule. Additional information is available at URL http://www.cebaf.gov/hallc.html.

High Power Hall Thrusters

NASA Technical Reports Server (NTRS)

Jankovsky, Robert; Tverdokhlebov, Sergery; Manzella, David

1999-01-01

The development of Hall thrusters with powers ranging from tens of kilowatts to in excess of one hundred kilowatts is considered based on renewed interest in high power. high thrust electric propulsion applications. An approach to develop such thrusters based on previous experience is discussed. It is shown that the previous experimental data taken with thrusters of 10 kW input power and less can be used. Potential mass savings due to the design of high power Hall thrusters are discussed. Both xenon and alternate thruster propellant are considered, as are technological issues that will challenge the design of high power Hall thrusters. Finally, the implications of such a development effort with regard to ground testing and spacecraft intecrati'on issues are discussed.

On channel interactions in nested Hall thrusters

NASA Astrophysics Data System (ADS)

Cusson, S. E.; Georgin, M. P.; Dragnea, H. C.; Dale, E. T.; Dhaliwal, V.; Boyd, I. D.; Gallimore, A. D.

2018-04-01

Nested Hall thrusters use multiple, concentric discharge channels to increase thrust density. They have shown enhanced performance in multi-channel operation relative to the superposition of individual channels. The X2, a two-channel nested Hall thruster, was used to investigate the mechanism behind this improved performance. It is shown that the local pressure near the thruster exit plane is an order of magnitude higher in two-channel operation. This is due to the increased neutral flow inherent to the multi-channel operation. Due to the proximity of the discharge channels in nested Hall thrusters, these local pressure effects are shown to be responsible for the enhanced production of thrust during multi-channel operation via two mechanisms. The first mechanism is the reduction of the divergence angle due to an upstream shift of the acceleration region. The displacement of the acceleration region was detected using laser induced fluorescence measurements of the ion velocity profile. Analysis of the change in beam divergence indicates that, at an operating condition of 150 V and 30 A, this effect increases the thrust by 8.7 ± 1.2 mN. The second mechanism is neutral ingestion from the adjacent channel resulting in a 2.0 + 0/-0.2 mN increase in thrust. Combined, these mechanisms are shown to explain, within uncertainty, the 17 ± 6.2 mN improvement in thrust during dual channel operation of the X2.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

The Hall effect in star formation

NASA Astrophysics Data System (ADS)

Braiding, C. R.; Wardle, M.

2012-05-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well studied. We present a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, and similarity solutions that demonstrate the profound influence of the Hall effect on the dynamics of collapse. The solutions show that the size and sign of the Hall parameter can change the size of the protostellar disc by up to an order of magnitude and the protostellar accretion rate by 50 per cent when the ratio of the Hall to ambipolar diffusivities is varied between -0.5 ≤ηH/ηA≤ 0.2. These changes depend upon the orientation of the magnetic field with respect to the axis of rotation and create a preferred handedness to the solutions that could be observed in protostellar cores using next-generation instruments such as ALMA. Hall diffusion also determines the strength and position of the shocks that bound the pseudo and rotationally supported discs, and can introduce subshocks that further slow accretion on to the protostar. In cores that are not initially rotating (not examined here), Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field merits further exploration in numerical simulations of star formation.

Mesoscopic Free Path of Nonthermalized Photogenerated Carriers in a Ferroelectric Insulator.

PubMed

Gu, Zongquan; Imbrenda, Dominic; Bennett-Jackson, Andrew L; Falmbigl, Matthias; Podpirka, Adrian; Parker, Thomas C; Shreiber, Daniel; Ivill, Mathew P; Fridkin, Vladimir M; Spanier, Jonathan E

2017-03-03

We show how finite-size scaling of a bulk photovoltaic effect-generated electric field in epitaxial ferroelectric insulating BaTiO_{3}(001) films and a photo-Hall response involving the bulk photovoltaic current reveal a large room-temperature mean free path of photogenerated nonthermalized electrons. Experimental determination of mesoscopic ballistic optically generated carrier transport opens a new paradigm for hot electron-based solar energy conversion, and for facile control of ballistic transport distinct from existing low-dimensional semiconductor interfaces, surfaces, layers, or other structures.

Non-invasive Hall current distribution measurement in a Hall effect thruster

NASA Astrophysics Data System (ADS)

Mullins, Carl R.; Farnell, Casey C.; Farnell, Cody C.; Martinez, Rafael A.; Liu, David; Branam, Richard D.; Williams, John D.

2017-01-01

A means is presented to determine the Hall current density distribution in a closed drift thruster by remotely measuring the magnetic field and solving the inverse problem for the current density. The magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned just outside the thruster channel on a 1.5 kW Hall thruster equipped with a center-mounted hollow cathode. In the sensor array location, the static magnetic field is approximately 30 G, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is approximately tens of milligauss, which is within the sensitivity range of the TMR sensors. Because of the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field does provide the current density distributions. These distributions are shown as a function of time in contour plots. The measured ratios between the average Hall current and the average discharge current ranged from 6.1 to 7.3 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 1.5 kW exhibited a breathing mode frequency of 24 kHz, which was in agreement with temporal measurements of the discharge current.

Non-invasive Hall current distribution measurement in a Hall effect thruster.

PubMed

Mullins, Carl R; Farnell, Casey C; Farnell, Cody C; Martinez, Rafael A; Liu, David; Branam, Richard D; Williams, John D

2017-01-01

A means is presented to determine the Hall current density distribution in a closed drift thruster by remotely measuring the magnetic field and solving the inverse problem for the current density. The magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned just outside the thruster channel on a 1.5 kW Hall thruster equipped with a center-mounted hollow cathode. In the sensor array location, the static magnetic field is approximately 30 G, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is approximately tens of milligauss, which is within the sensitivity range of the TMR sensors. Because of the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field does provide the current density distributions. These distributions are shown as a function of time in contour plots. The measured ratios between the average Hall current and the average discharge current ranged from 6.1 to 7.3 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 1.5 kW exhibited a breathing mode frequency of 24 kHz, which was in agreement with temporal measurements of the discharge current.

Star Formation and the Hall Effect

NASA Astrophysics Data System (ADS)

Braiding, Catherine

2011-10-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. This thesis describes a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, presenting similarity solutions that demonstrate that the Hall effect has a profound influence on the dynamics of collapse. ... Hall diffusion also determines the strength of the magnetic diffusion and centrifugal shocks that bound the pseudo and rotationally-supported discs, and can introduce subshocks that further slow accretion onto the protostar. In cores that are not initially rotating Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field would be worth exploring in future numerical simulations of star formation.

Reduced Spin Hall Effects from Magnetic Proximity.

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2015-03-26

We investigate temperature-dependent spin pumping and inverse spin Hall effects in thin Pt and Pd in contact with Permalloy. Our experiments show a decrease of the spin Hall effect with decreasing temperature, which is attributed to a temperature-dependent proximity effect. The spin Hall angle decreases from 0.086 at room temperature to 0.042 at 10 K for Pt and is nearly negligible at 10 K for Pd. By first-principle calculations, we show that the spin Hall conductivity indeed reduces by increasing the proximity-induced spin magnetic moments for both Pt and Pd. This work highlights the important role of proximity-induced magnetic orderingmore » to spin Hall phenomena in Pt and Pd.« less

Residence Hall Seating That Works.

ERIC Educational Resources Information Center

Wiens, Janet

2003-01-01

Describes the seating chosen for residence halls at the Massachusetts Institute of Technology and the University of New England. The seating required depends on ergonomics, aesthetics, durability, cost, and code requirements. In addition, residence halls must have a range of seating types to accommodate various uses. (SLD)

75 FR 22770 - Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-30

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13652-000-Montana] Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment April 22, 2010. In accordance with the National Environmental Policy Act of 1969, as amended, and the Federal Energy Regulatory...

Determining the most effective concentration of cypermethrin and the appropriate carrier particle size for fire ant (Hymenoptera: Formicidae) bait.

PubMed

Kafle, Lekhnath; Shih, Cheng-Jen

2012-03-01

The purpose of this study was to determine the most effective particle size of DDGS (distiller's dried grains with solubles) as fire ant bait carrier, as well as the most effective concentration of cypermethrin as a toxicant against the red imported fire ant (RIFA) Solenopsis invicta Buren under laboratory conditions. The DDGS particle size did not affect the fire ant's preference for the bait, but it did affect the mass of DDGS being carried back to the nest. The size of the DDGS particles and the mass of DDGS being carried back to the nest were positively correlated. The most efficient particle size of DDGS was 0.8-2 mm. The concentration of cypermethrin has a specific range for killing fire ants in an efficient manner. Neither a very low nor a very high concentration of cypermethrin was able to kill fire ants efficiently. The most effective concentration of cypermethrin was 0.13% in DDGS when mixed with 15% shrimp shell powders and 11% soybean oil. Based on its ability to kill fire ants when mixed with cypermethrin, as well as the advantage of having a larger area coverage when sprayed in the field, DDGS as the carrier and cypermethrin as the toxicant can be considered to be an efficient way to prepare fire ant bait for controlling fire ants in infested areas. Copyright © 2012 Society of Chemical Industry.

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

DOE PAGES

Calvo, M. R.; de Juan, F.; Ilan, R.; ...

2017-11-29

Here, we study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero inmore » the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.« less

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calvo, M. R.; de Juan, F.; Ilan, R.

Here, we study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero inmore » the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.« less

Laurance David Hall.

PubMed

Coxon, Bruce

2011-01-01

An account is given of the life, scientific contributions, and passing of Laurance David Hall (1938-2009), including his early history and education at the University of Bristol, UK, and the synthesis and NMR spectroscopy of carbohydrates and other natural products during ∼20 years of research and teaching at the University of British Columbia in Vancouver, Canada. Lists of graduate students, post-doctoral fellows, and sabbatical visitors are provided for this period. Following a generous endowment by Dr. Herchel Smith, Professor Hall built a new Department of Medicinal Chemistry at Cambridge University, UK, and greatly expanded his researches into the technology and applications of magnetic resonance imaging (MRI) and zero quantum NMR. MRI technology was applied both to medical problems such as the characterization of cartilage degeneration in knee joints, the measurement of ventricular function, lipid localization in animal models of atherosclerosis, paramagnetic metal complexes of polysaccharides as contrast agents, and studies of many other anatomical features, but also to several aspects of materials analysis, including food analyses, process control, and the elucidation of such physical phenomena as the flow of liquids through porous media, defects in concrete, and the visualization of fungal damage to wood. Professor Hall's many publications, patents, lectures, and honors and awards are described, and also his successful effort to keep the Asilomar facility in Pacific Grove, California as the alternating venue for the annual Experimental NMR Conference. Two memorial services for Professor Hall are remembered. Copyright © 2011 Elsevier Inc. All rights reserved.

The first vineyard concert hall in North America

NASA Astrophysics Data System (ADS)

Jaffe, Christopher; Rivera, Carlos

2002-11-01

The first vineyard or surround concert hall designed and built in the Western Hemisphere is the Sala Nezahualcoyotl in Mexico City. The Hall was completed in 1976 and is part of the Cultural Center at the Universidad Nacional Autonoma de Mexico. The hall was named after a Toltec poet, architect, and musician who lived in the 15th century and was the Renaissance man of his day. In order to provide the familiar traditional sound of the rectangular (shoebox) European Hall, the acoustic designers set the criteria for reverberation times through the frequency spectrum and the Initial Time Delay Gap at every seat in the house to match the measurements taken at the Grosser Musik vereinssaal in Vienna and Boston Symphony Hall. In this paper we discuss the techniques used to create the traditional sound in a vineyard hall and the reaction of musicians and audiences to the completed facility. The Sala was the model for Suntory Hall in Japan which in turn spawned a number of vineyard halls in Japan. Most recently, the vineyard style seems to be appealing to more and more symphonic organizations in Europe and North America.

Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices

NASA Astrophysics Data System (ADS)

Brown, A. E.; Baril, N.; Zuo, D.; Almeida, L. A.; Arias, J.; Bandara, S.

2017-09-01

The influence of dopant concentration on both in-plane mobility and minority carrier lifetime in long-wave infrared InAs/InAsSb superlattices (SLs) was investigated. Unintentially doped ( n-type) and various concentrations of Be-doped ( p-type) SLs were characterized using variable-field Hall and photoconductive decay techniques. Minority carrier lifetimes in p-type InAs/InAsSb SLs are observed to decrease with increasing carrier concentration, with the longest lifetime at 77 K determined to be 437 ns, corresponding to a measured carrier concentration of p 0 = 4.1 × 1015 cm-3. Variable-field Hall technique enabled the extraction of in-plane hole, electron, and surface electron transport properties as a function of temperature. In-plane hole mobility is not observed to change with doping level and increases with reducing temperature, reaching a maximum at the lowest temperature measured of 30 K. An activation energy of the Be-dopant is determined to be 3.5 meV from Arrhenius analysis of hole concentration. Minority carrier electrons populations are suppressed at the highest Be-doping levels, but mobility and concentration values are resolved in lower-doped samples. An average surface electron conductivity of 3.54 × 10-4 S at 30 K is determined from the analysis of p-type samples. Effects of passivation treatments on surface conductivity will be presented.

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laczkowski, P.; Rojas-Sánchez, J.-C.; INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble

2014-04-07

We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

Turbulence Measurements in a Tropical Zoo Hall

NASA Astrophysics Data System (ADS)

Eugster, Werner; Denzler, Basil; Bogdal, Christian

2017-04-01

The Masoala rainforest hall of the Zurich Zoo, Switzerland, covers a ground surface area of 10,856 m2 and reaches 30 m in height. With its transparent ETFE foiled roof it provides a tropical climate for a large diversity of plants and animals. In combination with an effort to estimate dry deposition of elemental mercury, we made an attempt to measure turbulent transfer velocity with an ultrasonic anemometer inside the hall. Not surprising, the largest turbulence elements were on the order of the hall dimension. Although the dimensions of the hall seem to be small (200,000 m3) for eddy covariance flux measurements and the air circulation inside the hall was extremely weak, the spectra of wind velocity components and virtual (sonic) temperature obeyed the general statistical description expected under unconstrained outdoor measurement conditions. We will present results from a two-week measurement campaign in the Masoala rainforest hall and make a suggestion for the deposition velocity to be used to estimate dry deposition of atmospheric components to the tropical vegetation surface.

The Other Hall Effect: College Board Physics

ERIC Educational Resources Information Center

Sheppard, Keith; Gunning, Amanda M.

2013-01-01

Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

Chapin Hall Center for Children.

ERIC Educational Resources Information Center

Chicago Univ., IL. Chapin Hall Center for Children.

This document consists of two separate publications: (1) "The Power of Knowing", a brief 12-page description of the Chapin Hall Center for Children, and (2) "Projects and Publications", a 67-page list of the center's projects and publications as of Autumn 1997. "The Power of Knowing" describes the Chapin Hall Center…

Hall Thruster Technology for NASA Science Missions

NASA Technical Reports Server (NTRS)

Manzella, David; Oh, David; Aadland, Randall

2005-01-01

The performance of a prototype Hall thruster designed for Discovery-class NASA science mission applications was evaluated at input powers ranging from 0.2 to 2.9 kilowatts. These data were used to construct a throttle profile for a projected Hall thruster system based on this prototype thruster. The suitability of such a Hall thruster system to perform robotic exploration missions was evaluated through the analysis of a near Earth asteroid sample return mission. This analysis demonstrated that a propulsion system based on the prototype Hall thruster offers mission benefits compared to a propulsion system based on an existing ion thruster.

Effects of environmental conditions on the ultrafast carrier dynamics in graphene revealed by terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Hafez, H. A.; Chai, X.; Sekine, Y.; Takamura, M.; Oguri, K.; Al-Naib, I.; Dignam, M. M.; Hibino, H.; Ozaki, T.

2017-04-01

A thorough understanding of the stability of graphene under ambient environmental conditions is essential for future graphene-based applications. In this paper, we study the effects of ambient temperature on the properties of monolayer graphene using terahertz time-domain spectroscopy as well as time-resolved terahertz spectroscopy enabled by an optical-pump/terahertz-probe technique. The observations show that graphene is extremely sensitive to the ambient environmental conditions and behaves differently depending on the sample preparation technique and the initial Fermi level. The analysis of the spectroscopic data is supported by van der Pauw and Hall effect measurements of the carrier mobility and carrier density at temperatures comparable to those tested in our THz spectroscopic experiments.

Numerical analysis of Hall effect on the performance of magnetohydrodynamic heat shield system based on nonequilibrium Hall parameter model

NASA Astrophysics Data System (ADS)

Li, Kai; Liu, Jun; Liu, Weiqiang

2017-01-01

Magnetohydrodynamic (MHD) heat shield system, a novel thermal protection technique in the hypersonic field, has been paid much attention in recent years. In the real flight condition, not only the Lorentz force but also the Hall electric field is induced by the interaction between ionized air post shock and magnetic field. In order to analyze the action mechanisms of the Hall effect, numerical methods of coupling thermochemical nonequilibrium flow field with externally applied magnetic field as well as the induced electric field are constructed and validated. Based on the nonequilibrium model of Hall parameter, numerical simulations of the MHD heat shield system is conducted under two different magnetic induction strengths (B0=0.2 T, 0.5 T) on a reentry capsule forebody. Results show that, the Hall effect is the same under the two magnetic induction strengths when the wall is assumed to be conductive. For this case, with the Hall effect taken into account, the Lorentz force counter stream diminishes a lot and the circumferential component dominates, resulting that the heat flux and shock-off distance approach the case without MHD control. However, for the insulating wall, the Hall effect acts in different ways under these two magnetic induction strengths. For this case, with the Hall effect taken into account, the performance of MHD heat shield system approaches the case neglecting the Hall effect when B0 equals 0.2 T. Such performance becomes worse when B0 equals 0.5 T and the aerothermal environment on the capsule shoulder is even worse than the case without MHD control.

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

PubMed

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

NASA Astrophysics Data System (ADS)

Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei

2018-02-01

We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance-voltage (C-V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C-V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered.

A Gift for Reading Hall No. 1

ERIC Educational Resources Information Center

MacWilliams, Bryon

2009-01-01

In this article, the author describes Reading Hall No. 1 of the Russian State Library. He was placed in the first reading hall in the mid-1990s, when the Russian government still honored Soviet traditions of granting certain privileges to certain foreigners. In the first hall, the rules are different. He can request as many books as he wants. He…

High- T c Superconductivity in FeSe at High Pressure: Dominant Hole Carriers and Enhanced Spin Fluctuations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, J. P.; Ye, G. Z.; Shahi, P.

The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (T c). However, high-T c superconductivity without hole carriers has been suggested in FeSe single-layer films and intercalated iron-selenides, raising a fundamental question whether iron pnictides and chalcogenides have different pairing mechanisms. Here, we study the properties of electronic structure in another high-T c phase induced by pressure in bulk FeSe from magneto-transport measurements and first-principles calculations. With increasing pressure, the low-T c superconducting phase transforms into high-T c phase, where we find the normal-state Hall resistivity changes sign from negative to positive, demonstratingmore » dominant hole carriers in striking contrast to other FeSe-derived high-T c systems. Moreover, the Hall coefficient is remarkably enlarged and the magnetoresistance exhibits anomalous scaling behaviours, evidencing strongly enhanced interband spin fluctuations in the high-T c phase. These results in FeSe highlight similarities with high-T c phases of iron pnictides, constituting a step toward a unified understanding of iron-based superconductivity.« less

High- T c Superconductivity in FeSe at High Pressure: Dominant Hole Carriers and Enhanced Spin Fluctuations

DOE PAGES

Sun, J. P.; Ye, G. Z.; Shahi, P.; ...

2017-04-07

The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (T c). However, high-T c superconductivity without hole carriers has been suggested in FeSe single-layer films and intercalated iron-selenides, raising a fundamental question whether iron pnictides and chalcogenides have different pairing mechanisms. Here, we study the properties of electronic structure in another high-T c phase induced by pressure in bulk FeSe from magneto-transport measurements and first-principles calculations. With increasing pressure, the low-T c superconducting phase transforms into high-T c phase, where we find the normal-state Hall resistivity changes sign from negative to positive, demonstratingmore » dominant hole carriers in striking contrast to other FeSe-derived high-T c systems. Moreover, the Hall coefficient is remarkably enlarged and the magnetoresistance exhibits anomalous scaling behaviours, evidencing strongly enhanced interband spin fluctuations in the high-T c phase. These results in FeSe highlight similarities with high-T c phases of iron pnictides, constituting a step toward a unified understanding of iron-based superconductivity.« less

Quantum hall ferromagnets

NASA Astrophysics Data System (ADS)

Kumar, Akshay

We study several quantum phases that are related to the quantum Hall effect. Our initial focus is on a pair of quantum Hall ferromagnets where the quantum Hall ordering occurs simultaneously with a spontaneous breaking of an internal symmetry associated with a semiconductor valley index. In our first example ---AlAs heterostructures--- we study domain wall structure, role of random-field disorder and dipole moment physics. Then in the second example ---Si(111)--- we show that symmetry breaking near several integer filling fractions involves a combination of selection by thermal fluctuations known as "order by disorder" and a selection by the energetics of Skyrme lattices induced by moving away from the commensurate fillings, a mechanism we term "order by doping". We also study ground state of such systems near filling factor one in the absence of valley Zeeman energy. We show that even though the lowest energy charged excitations are charge one skyrmions, the lowest energy skyrmion lattice has charge > 1 per unit cell. We then broaden our discussion to include lattice systems having multiple Chern number bands. We find analogs of quantum Hall ferromagnets in the menagerie of fractional Chern insulator phases. Unlike in the AlAs system, here the domain walls come naturally with gapped electronic excitations. We close with a result involving only topology: we show that ABC stacked multilayer graphene placed on boron nitride substrate has flat bands with non-zero local Berry curvature but zero Chern number. This allows access to an interaction dominated system with a non-trivial quantum distance metric but without the extra complication of a non-zero Chern number.

Overview of Hall D Complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chudakov, Eugene A.

Hall D is a new experimental hall at Jefferson Lab, designed for experiments with a photon beam. The primary motivation for Hall D is the GlueX experiment [1,2], dedicated to meson spectroscopy. The Hall D complex consists of: An electron beam line used to extract the 5.5-pass electrons from the accelerator into the Tagger Hall. The designed beam energy is E e = 12 GeV;The Tagger Hall, where the electron beam passes through a thin radiator (~0.01% R.L.) and is deflected into the beam dump. The electrons that lost >30% of their energy in the radiator are detected with scintillatormore » hodoscopes providing a ~0.1% energy resolution for the tagged photons. Aligned diamond radiators allow to produce linearly polarized photons via the Coherent Bremsstrahlung. The beam dump is limited to 60 kW (5 µA at 12 GeV); The Collimator Cave contains a collimator for the photon beam and dipole magnets downstream in order to remove charged particles. The 3.4 mm diameter collimator, located about 75 m downstream of the radiator, selects the central cone of the photon beam increasing its average linear polarization, up to ~40%in the coherent peak at 9 GeV; Hall D contains several elements of the photon beam line, and themain spectrometer. A Pair Spectrometer consists of a thin converter, a dipole magnet, and a two-arm detector used to measure the energy spectrum of the photon beam. The main spectrometer is based on a 2-T superconducting solenoid, 4 m long and 1.85 m bore diameter. The liquid hydrogen target is located in the front part the solenoid. The charged tracks are detected with a set of drift chambers; photons are detected with two electromagnetic calorimeters. There are also scintillator hodoscopes for triggering and time-of-flight measurements. The spectrometer is nearly hermetic in an angular range of 1° < θ < 120 •. The momentum resolution is σ p /p ~ 1 ₋ ₋3% depending on the polar angle θ. The energy resolution of the electromagnetic calorimeters is about 7

Thermoelectric properties of sintered type-II clathrates (K, Ba)24(Ga, Sn)136 with various carrier concentrations

NASA Astrophysics Data System (ADS)

Kishimoto, Kengo; Koda, Shota; Akai, Koji; Koyanagi, Tsuyoshi

2015-09-01

We reported the thermoelectric properties of the sintered type-II clathrate K8Ba16Ga40Sn96 in a previous paper [S. Koda et al., J. Appl. Phys. 116, 023710 (2014)]. The clathrate had a high dimensionless figure of merit ZT, namely, 0.93. In this study, we optimized the carrier concentration n by modifying the chemical compositions of (K, Ba)24(Ga, Sn)136 samples, and heat treated the sintered samples. The carrier mobilities μ were improved because of the reduction in potential barrier scattering at grain boundaries. The room-temperature (RT) n values varied from 7.7 × 1017 to 3.7 × 1019 cm-3; the maximum RT μ value was 170 cm2V-1s-1. Consequently, we obtained a high ZT value of 1.19 at 630 K for n = 2.5 × 1019 cm-3. This material therefore has good thermoelectric properties.

Astronaut Hall of Fame

NASA Image and Video Library

2018-04-21

Former astronauts and space explorers, Thomas D. Jones, Ph.D., and Scott D. Altman, front row, center, left and right, respectively, were inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They are standing with previous Hall of Famers, including, Curt Brown, back row, far left, chairman of the board, Astronaut Scholarship Foundation. Brown performed the induction ceremony. Also in the group is former astronaut and NASA administrator Charlie Bolden, in the center, behind Jones and Altman. In the back row, second from left is John Grunsfeld, who spoke on behalf of Altman during the ceremony. Directly behind Altman is Storey Musgrave, who spoke on behalf of Jones during the ceremony. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

Dr. Hall and the work cure.

PubMed

Reed, Kathlyn L

2005-01-01

Herbert James Hall, MD (1870-1923), was a pioneer in the systematic and organized study of occupation as therapy for persons with nervous and mental disorders that he called the "work cure." He began his work in 1904 during the early years of the Arts and Crafts Movement in the United States. His primary interest was the disorder neurasthenia, a condition with many symptoms including chronic fatigue, stress, and inability to work or perform everyday tasks. The prevailing treatment of the day was absolute bed rest known as the "rest cure." Hall believed that neurasthenia was not caused by overwork but by faulty living habits that could be corrected through an ordered life schedule and selected occupations. He identified several principles of therapy that are still used today including graded activity and energy conservation. Dr. Adolph Meyer credits Hall for organizing the ideas on the therapeutic use of occupation (Meyer, 1922). Hall also provided the name American Occupational Therapy Association for the professional organization and served as the fourth president. For his many contributions to the profession Hall deserves to be recognized as a major contributor to the development and organization of occupational therapy.

Stratification of welding fumes and grinding particles in a large factory hall equipped with displacement ventilation.

PubMed

Niemelä, R; Koskela, H; Engström, K

2001-08-01

The purpose of the study was to investigate the performance of displacement ventilation in a large factory hall where large components of stainless steel for paper, pulp and chemical industries were manufactured. The performance of displacement ventilation was evaluated in terms of concentration distributions of welding fumes and grinding particles, flow field of the supply air and temperature distributions. Large differences in vertical stratification patterns between hexavalent chromium (Cr(VI)) and other particulate contaminants were observed. The concentration of Cr(VI) was notably lower in the zone of occupancy than in the upper part of the factory hall, whereas the concentrations of total airborne particles and trivalent chromium (Cr(III)) were higher in the occupied zone than in the upper zone. The stratification of Cr(VI) had the same tendency as the air temperature stratification caused by the displacement flow field.

Magnet/Hall-Effect Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

2017 Astronaut Hall of Fame Induction Ceremony

NASA Image and Video Library

2017-05-19

In the Space Shuttle Atlantis facility at the Kennedy Space Center Visitor Complex in Florida, Astronaut Scholarship Foundation Chairman Dan Brandenstein, left, also a Hall of Fame astronaut, presents inductee Michael Foale with his hall of fame medal. Former NASA Administrator Charlie Bolden, right, a Hall of Fame member, presented Foale for induction. During this year's ceremonies, space shuttle astronaut Ellen Ochoa also was enshrined.

2017 Astronaut Hall of Fame Induction Ceremony

NASA Image and Video Library

2017-05-19

In the Space Shuttle Atlantis facility at the Kennedy Space Center Visitor Complex in Florida, Astronaut Scholarship Foundation Chairman Dan Brandenstein, left, also a Hall of Fame astronaut, presents inductee Ellen Ochoa with her hall of fame medal. Former Johnson Space Center Director Mike Coats, right, a Hall of Fame member, presented Ochoa for induction. During this year's ceremonies, space shuttle astronaut Michael Foale also was enshrined.

Sensitivity of resistive and Hall measurements to local inhomogeneities

NASA Astrophysics Data System (ADS)

Koon, Daniel W.; Wang, Fei; Hjorth Petersen, Dirch; Hansen, Ole

2013-10-01

We derive exact, analytic expressions for the sensitivity of resistive and Hall measurements to local inhomogeneities in a specimen's material properties in the combined linear limit of a weak perturbation over an infinitesimal area in a small magnetic field. We apply these expressions both to four-point probe measurements on an infinite plane and to symmetric, circular van der Pauw discs, obtaining functions consistent with published results. These new expressions speed up calculation of the sensitivity for a specimen of arbitrary shape to little more than the solution of two Laplace equation boundary-value problems of the order of N3 calculations, rather than N2 problems of total order N5, and in a few cases produces an analytic expression for the sensitivity. These functions provide an intuitive, visual explanation of how, for example, measurements can predict the wrong carrier type in n-type ZnO.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Remote Diagnostic Measurements of Hall Thruster Plumes

DTIC Science & Technology

2009-08-14

This paper describes measurements of Hall thruster plumes that characterize ion energy distributions and charge state fractions using remotely...charge state. Next, energy and charge state measurements are described from testing of a 200 W Hall thruster at AFIT. Measurements showed variation in...position. Finally, ExB probe charge state measurements are presented from a 6-kW laboratory Hall thruster operated at low discharge voltage levels at AFRL

Charge carrier mobility in a two-phase disordered organic system in the low-carrier concentration regime

NASA Astrophysics Data System (ADS)

Woellner, Cristiano F.; Li, Zi; Freire, José A.; Lu, Gang; Nguyen, Thuc-Quyen

2013-09-01

In this paper we use a three-dimensional Pauli master equation to investigate the charge carrier mobility of a two-phase system which can mimic donor-acceptor and amorphous-crystalline bulk heterojunctions. By taking the energetic disorder of each phase, their energy offset, and domain morphology into consideration, we show that the carrier mobility can have a completely different behavior when compared to a one-phase system. When the energy offset is equal to zero, the mobility is controlled by the more disordered phase. When the energy offset is nonzero, we show that the mobility electric field dependence switches from negative to positive at a threshold field proportional to the energy offset. Additionally, the influence of morphology, through the domain size and volume ratio parameters, on the transport is investigated and an approximate analytical expression for the zero field mobility is provided.

Hall thruster with grooved walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Hong; Ning Zhongxi; Yu Daren

2013-02-28

Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less

Spin Hall Effects in Metallic Antiferromagnets

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2014-11-04

In this paper, we investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of these materials to be short, on the order of 1 nm. The estimated spin Hall angles of the four materials follow the relationship PtMn > IrMn > PdMn > FeMn, highlighting the correlation between the spin-orbit coupling of nonmagnetic species and the magnitude of the spinmore » Hall effect in their antiferromagnetic alloys. These experiments are compared with first-principles calculations. Finally, engineering the properties of the antiferromagnets as well as their interfaces can pave the way for manipulation of the spin dependent transport properties in antiferromagnet-based spintronics.« less

Valley-chiral quantum Hall state in graphene superlattice structure

NASA Astrophysics Data System (ADS)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Carrier tests to assess the effective sporicidal concentration of a liquid chemical disinfectant for a sanitization program.

PubMed

Ceccanti, Stefano; Giampieri, Simona; Burgalassi, Susi

2011-01-01

The aim of the present investigation was to evaluate the microbial efficacy against highly resistant bacterial spores on different substrates using the lowest effective concentration of a market liquid sporicide based on peracetic acid. The validation was carried out following modified European regulatory agencies procedures or test methods and USP guidelines, employing carriers of materials usually treated with the sporicidal solution and present in grade A cleanrooms and spores of four different microorganisms: Bacillus subtilis and Clostridium sporogenes, both from the ATCC collection, and Bacillus cereus and Bacillus sphaericus as environmental isolates. A statistical evaluation of data was made to estimate the variance for different study conditions. The experiments highlighted that 70% suitable dilution of the ready-to-use peracetic acid solution was effective in both clean and dirty conditions, showing at least 2 log spore reduction after treatment. To obtain effective sporicidal action on the surfaces in cleanrooms it is sufficient to use a sporicidal solution with a ready-to-use concentration of 70% while ensuring a contact time of 10 min. In any case, the reduction of sporicide concentration ensures a high degree of disinfection and provides a consumption savings. Wide-spectrum disinfectants are used in the pharmaceutical industry for the decontamination of work surfaces and equipment, but these products have some degree of toxicity for operators. This work arises from the needs of pharmaceutical companies to find the lowest effective concentration of sanitizers in order to reduce toxicity to personnel. The sanitizer used in the study was a market liquid sporicide based on peracetic acid. When we started our work no similar studies were reported in the literature, so we took European regulatory agencies and USP guidelines as a starting point, employing carriers of hard, non-porous materials usually treated with the sporicidal solution and present in

Nonlinearity in the effect of an inhomogeneous Hall angle

NASA Astrophysics Data System (ADS)

Koon, Daniel W.

2007-03-01

The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

Reversible structure manipulation by tuning carrier concentration in metastable Cu2S

PubMed Central

Tao, Jing; Chen, Jingyi; Li, Jun; Mathurin, Leanne; Zheng, Jin-Cheng; Li, Yan; Lu, Deyu; Cao, Yue; Wu, Lijun; Cava, Robert Joseph; Zhu, Yimei

2017-01-01

The optimal functionalities of materials often appear at phase transitions involving simultaneous changes in the electronic structure and the symmetry of the underlying lattice. It is experimentally challenging to disentangle which of the two effects––electronic or structural––is the driving force for the phase transition and to use the mechanism to control material properties. Here we report the concurrent pumping and probing of Cu2S nanoplates using an electron beam to directly manipulate the transition between two phases with distinctly different crystal symmetries and charge-carrier concentrations, and show that the transition is the result of charge generation for one phase and charge depletion for the other. We demonstrate that this manipulation is fully reversible and nonthermal in nature. Our observations reveal a phase-transition pathway in materials, where electron-induced changes in the electronic structure can lead to a macroscopic reconstruction of the crystal structure. PMID:28855335

Evolution of High-Temperature Superconductivity from a Low-T_{c} Phase Tuned by Carrier Concentration in FeSe Thin Flakes.

PubMed

Lei, B; Cui, J H; Xiang, Z J; Shang, C; Wang, N Z; Ye, G J; Luo, X G; Wu, T; Sun, Z; Chen, X H

2016-02-19

We report the evolution of superconductivity in an FeSe thin flake with systematically regulated carrier concentrations by the liquid-gating technique. With electron doping tuned by the gate voltage, high-temperature superconductivity with an onset at 48 K can be achieved in an FeSe thin flake with T_{c} less than 10 K. This is the first time such high temperature superconductivity in FeSe is achieved without either an epitaxial interface or external pressure, and it definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with T_{c}^{onset} as high as 48 K in bulk FeSe. Intriguingly, our data also indicate that the superconductivity is suddenly changed from a low-T_{c} phase to a high-T_{c} phase with a Lifshitz transition at a certain carrier concentration. These results help to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on the further pursuit of a higher T_{c} in these materials.

Air temperature gradient in large industrial hall

NASA Astrophysics Data System (ADS)

Karpuk, Michał; Pełech, Aleksander; Przydróżny, Edward; Walaszczyk, Juliusz; Szczęśniak, Sylwia

2017-11-01

In the rooms with dominant sensible heat load, volume airflow depends on many factors incl. pre-established temperature difference between exhaust and supply airflow. As the temperature difference is getting higher, airflow volume drops down, consequently, the cost of AHU is reduced. In high industrial halls with air exhaust grids located under the ceiling additional temperature gradient above working zone should be taken into consideration. In this regard, experimental research of the vertical air temperature gradient in high industrial halls were carried out for the case of mixing ventilation system The paper presents the results of air temperature distribution measurements in high technological hall (mechanically ventilated) under significant sensible heat load conditions. The supply airflow was delivered to the hall with the help of the swirl diffusers while exhaust grids were located under the hall ceiling. Basing on the air temperature distribution measurements performed on the seven pre-established levels, air temperature gradient in the area between 2.0 and 7.0 m above the floor was calculated and analysed.

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Preliminary Study of Arcjet Neutralization of Hall Thruster Clusters (Postprint)

DTIC Science & Technology

2007-01-18

Clustered Hall thrusters have emerged as a favored choice for extending Hall thruster options to very high powers (50 kW - 150 kW). This paper...examines the possible use of an arcjet to neutralize clustered Hall thrusters, as the hybrid arcjet- Hall thruster concept can fill a performance niche...and helium, and then demonstrate the first successful operation of a low power Hall thruster -arcjet neutralizer package. In the surrogate anode studies

Hall Thruster

NASA Image and Video Library

2017-03-06

NASA Glenn engineer Dr. Peter Peterson prepares a high-power Hall thruster for ground testing in a vacuum chamber that simulates the environment in space. This high-powered solar electric propulsion thruster has been identified as a critical part of NASA’s future deep space exploration plans.

The quantum Hall effects: Philosophical approach

NASA Astrophysics Data System (ADS)

Lederer, P.

2015-05-01

The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

Hall devices improve electric motor efficiency

NASA Technical Reports Server (NTRS)

Haeussermann, W.

1979-01-01

Efficiency of electric motors and generators is reduced by radial magnetic forces created by symmetric fields within device. Forces are sensed and counteracted by Hall devices on excitation or control windings. Hall generators directly measure and provide compensating control of anu asymmetry, eliminating additional measurements needed for calibration feedback control loop.

Coping Behaviors of Residence Hall Directors

ERIC Educational Resources Information Center

Wilkes, Ben

2017-01-01

This mixed-methods study examined tertiary-level residence-hall directors' reported coping behaviors for three systems of stress: environmental, personal, and work. It surveyed a convenience sample of 128 respondents using the Brief COPE scale (Carver, 1997). Reported length of service, genders, and hall populations were matched with 28 types of…

Thermally driven anomalous Hall effect transitions in FeRh

NASA Astrophysics Data System (ADS)

Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

2018-04-01

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Comparisons and Evaluation of Hall Thruster Models

DTIC Science & Technology

2002-03-20

COVERED (FROM - TO) 20-04-2001 to 20-04-2002 4. TITLE AND SUBTITLE comparisons and Evaluation of Hall Thruster Models Unclassified 5a. CONTRACT NUMBER...TITLE AND SUBTITLE Comparisons and Evaluation of Hall Thruster Models 5c. PROGRAM ELEMENT NUMBER 5d. PROJECT NUMBER 5d. TASK NUMBER 6. AUTHOR(S...evaluation of Hall thruster models G. J. M. Hagelaar, J. Bareilles, L. Garrigues, and J.-P. Boeuf CPAT, Bâtiment 3R2, Université Paul Sabatier 118 Route

Extrinsic spin Hall effect in graphene

NASA Astrophysics Data System (ADS)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

The shear-Hall instability in newborn neutron stars

NASA Astrophysics Data System (ADS)

Kondić, T.; Rüdiger, G.; Hollerbach, R.

2011-11-01

Aims: In the first few minutes of a newborn neutron star's life the Hall effect and differential rotation may both be important. We demonstrate that these two ingredients are sufficient for generating a "shear-Hall instability" and for studying its excitation conditions, growth rates, and characteristic magnetic field patterns. Methods: We numerically solve the induction equation in a spherical shell, with a kinematically prescribed differential rotation profile Ω(s), where s is the cylindrical radius. The Hall term is linearized about an imposed uniform axial field. The linear stability of individual azimuthal modes, both axisymmetric and non-axisymmetric, is then investigated. Results: For the shear-Hall instability to occur, the axial field must be parallel to the rotation axis if Ω(s) decreases outward, whereas if Ω(s) increases outward it must be anti-parallel. The instability draws its energy from the differential rotation, and occurs on the short rotational timescale rather than on the much longer Hall timescale. It operates most efficiently if the Hall time is comparable to the diffusion time. Depending on the precise field strengths B0, either axisymmetric or non-axisymmetric modes may be the most unstable. Conclusions: Even if the differential rotation in newborn neutron stars is quenched within minutes, the shear-Hall instability may nevertheless amplify any seed magnetic fields by many orders of magnitude.

Thermoelectric properties of hot pressed p-type SiGe alloys

NASA Technical Reports Server (NTRS)

Bajgar, Clara; Masters, Richard; Scoville, Nancy; Vandersande, Jan

1991-01-01

This paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.

Safety halls--an evaluation.

PubMed

Nyberg, Anders; Gregersen, Nils Petter; Nolén, Sixten; Engström, Inger

2005-01-01

In most countries, drivers licensing systems usually include teaching some aspects of using safety equipment (e.g., airbags and seat belts). However, there is now evidence worldwide that such education is inadequate, as indicated by, for example, the overrepresentation of young drivers who do not use seat belts. A randomized controlled study was conducted in Sweden to evaluate the effects of visiting a facility known as a "safety hall" in combination with the mandatory skid training. The results were assessed to determine the effects of the knowledge and attitudes of learner drivers in the following subjects: airbags, securing loads, seat belts, sitting posture, speed, and tires. An experimental group and a control group comprising 658 and 668 learners, respectively, answered identical questionnaires on three different occasions (pretest, posttest 1, and posttest 2). The results show that, for most of the topics considered, knowledge and attitudes in both groups were better at posttest 2 than at the pretest, and in general, the best knowledge and attitudes were found in the experimental group. The combined safety/skid training seems to have had the greatest effect on seat belts and loads. The findings also indicate that the safety halls can be further improved to achieve an even better effect. The use of safety halls has improved the knowledge and attitudes of learner drivers concerning several important areas related to traffic safety. Since knowledge and attitudes are important predictors of behavior, implementing safety halls can be expected to lead to improvements, especially regarding the use of safety belts and securing loads.

HBsAg carrier status and the association between gestational diabetes with increased serum ferritin concentration in Chinese women.

PubMed

Lao, Terence T; Tse, Ka-Yu; Chan, Louis Y; Tam, Kar-Fai; Ho, Lai-Fong

2003-11-01

To determine whether the high prevalence of hepatitis B surface antigen (HBsAg) carriage in our population can explain the previous observation of an association between increased maternal serum ferritin concentration and gestational diabetes in Hong Kong Chinese women. A retrospective study was performed on 767 nonanemic women with singleton pregnancy who had iron status assessed at 28-30 weeks. The result of the routine antenatal HBsAg screening was retrieved from patient records. The HBsAg-positive and -negative groups were compared for maternal characteristics, prevalence of gestational diabetes in the third trimester, prevalence of high serum ferritin and iron concentrations, and transferrin saturation, which is defined as a value in the highest quartile established by the measurements obtained from the HBsAg-negative group. The incidences of oral glucose tolerance test and gestational diabetes were significantly increased in the HBsAg-positive group. The HBsAg-positive women with gestational diabetes had significantly increased prevalence of high serum ferritin compared with the HBsAg-negative women, irrespective of the latter's gestational diabetes status. Multiple logistic regression analysis confirmed the independent association between HBsAg carrier status with gestational diabetes (relative risk 3.51, 95% CI 1.83-6.73) but excluded high ferritin as an independent factor. Our results indicate that maternal HBsAg carriage could explain in part the association between increased serum ferritin concentration with gestational diabetes in Hong Kong Chinese women, and that HBsAg carrier status is an independent risk factor for gestational diabetes.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

NASA Astrophysics Data System (ADS)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Hall viscosity and electromagnetic response of electrons in graphene

NASA Astrophysics Data System (ADS)

Sherafati, Mohammad; Principi, Alessandro; Vignale, Giovanni

The Hall viscosity is a dissipationless component of the viscosity tensor of an electron liquid with broken time- reversal symmetry, such as a two-dimensional electron gas (2DEG) in the quantum Hall state. Similar to the Hall conductivity, the Hall viscosity is an anomalous transport coefficient; however, while the former is connected with the current response, the latter stems from the stress response to a geometric deformation. For a Galilean-invariant system such as 2DEG, the current density is indeed the generator of the geometric deformation: therefore a connection between the Hall connectivity and viscosity is expected and by now well established. In the case of graphene, a non-Galilean-invariant system, the existence of such a connection is far from obvious, as the current operator is essentially different from the momentum operator. In this talk, I will first present our results of the geometric Hall viscosity of electrons in single-layer graphene. Then, from the expansion of the nonlocal Hall conductivity for small wave vectors, I demonstrate that, in spite of the lack of Galilean invariance, an effective mass can be defined such that the relationship between the Hall conductivity and the viscosity retains the form it has in Galilean-invariant systems, not only for a large number of occupied Landau levels, but also, with very high accuracy, for the undoped system.

Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove

2017-04-01

Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al0.3Ga0.7As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest Be dopant density of 2.9 × 1019 cm-3, whereas for Te doped samples the doping efficiency was in general low and the carrier concentration saturated for Te-dopant densities above 8.0 × 1018 cm-3. The low doping efficiency in Te-doped Al0.9Ga0.1As0.06Sb0.94 layer was studied by deep-level transient spectroscopy, revealing existence of deep trap levels and related DX-centers which explains the low doping efficiency.

Simmons Hall, Massachusetts.

ERIC Educational Resources Information Center

Amelar, Sarah

2003-01-01

Describes the design of Simmons Hall, an undergraduate dormitory at the Massachusetts Institute of Technology, including the educational context and design goals. Includes information on the architects, as well as floor plans and photographs. (EV)

Remnant Geometric Hall Response in a Quantum Quench.

PubMed

Wilson, Justin H; Song, Justin C W; Refael, Gil

2016-12-02

Out-of-equilibrium systems can host phenomena that transcend the usual restrictions of equilibrium systems. Here, we unveil how out-of-equilibrium states, prepared via a quantum quench in a two-band system, can exhibit a nonzero Hall-type current-a remnant Hall response-even when the instantaneous Hamiltonian is time reversal symmetric (in contrast to equilibrium Hall currents). Interestingly, the remnant Hall response arises from the coherent dynamics of the wave function that retain a remnant of its quantum geometry postquench, and can be traced to processes beyond linear response. Quenches in two-band Dirac systems are natural venues for realizing remnant Hall currents, which exist when either mirror or time-reversal symmetry are broken (before or after the quench). Its long time persistence, sensitivity to symmetry breaking, and decoherence-type relaxation processes allow it to be used as a sensitive diagnostic of the complex out-of-equilibrium dynamics readily controlled and probed in cold-atomic optical lattice experiments.

A Behavioral Weight Control Program for Residence Hall Students.

ERIC Educational Resources Information Center

Domke, Jane A.; And Others

1981-01-01

Compared a weight control treatment specifically tailored to the needs of residence hall students with a standardized behavioral procedure. Although posttreatment results indicated a very slight and nonsignificant advantage for the residence hall condition, this was not true at follow-up. Suggests the residence hall procedure may be overly…

Roles of nonlocal conductivity on spin Hall angle measurement

NASA Astrophysics Data System (ADS)

Chen, Kai; Zhang, Shufeng

2017-10-01

Spin Hall angle characterizes the rate of spin-charge current conversion and it has become one of the most important material parameters for spintronics physics and device application. A long-standing controversy is that the spin Hall angles for a given material measured by spin pumping and by spin Hall torque experiments are inconsistent and they could differ by as much as an order of magnitude. By using the linear response spin transport theory, we explicitly formulate the relation between the spin Hall angle and measured variables in different experiments. We find that the nonlocal conductivity inherited in the layered structure plays a key role to resolve conflicting values of the spin Hall angle. We provide a generalized scheme for extracting spin transport coefficients from experimental data.

Spin torque efficiency of Ta, W, and Pt in metallic bilayers evaluated by harmonic Hall and spin Hall magnetoresistance measurements

NASA Astrophysics Data System (ADS)

Lau, Yong-Chang; Hayashi, Masamitsu

2017-08-01

We investigate the efficiency of current-induced torque, i.e., the spin torque efficiency, in in-plane magnetized heavy metal/CoFeB/MgO heterostructures (heavy metals = Pt, W, and Ta) using the harmonic Hall technique and the spin Hall magnetoresistance. We find that the amplitude of the external magnetic field has a strong influence on the spin torque efficiency evaluation by the harmonic Hall measurements. This can be corrected by measuring the corresponding Hall resistance susceptibility. The sign and magnitude of the resulting Slonczewski-like spin torque efficiencies are in agreement with previous reports and the measurements utilizing the spin Hall magnetoresistance, except for the Pt underlayer films. The origin of the discrepancy for the Pt underlayer films is unclear. The field like torque efficiencies, upon subtracting the Oersted field contribution, are quite low or negligible. This is in significant contrast to what has been found for the field like torque in heterostructures with perpendicular magnetization. These results suggest that a more advanced model is required in order to describe accurately spin transport and momentum transfer at metallic interfaces.

Thermoelectric Properties of SnS with Na-Doping.

PubMed

Zhou, Binqiang; Li, Shuai; Li, Wen; Li, Juan; Zhang, Xinyue; Lin, Siqi; Chen, Zhiwei; Pei, Yanzhong

2017-10-04

Tin sulfide (SnS), a low-cost compound from the IV-VI semiconductors, has attracted particular attention due to its great potential for large-scale thermoelectric applications. However, pristine SnS shows a low carrier concentration, which leads to a low thermoelectric performance. In this work, sodium is utilized to substitute Sn to increase the hole concentration and consequently improve the thermoelectric power factor. The resultant Hall carrier concentration up to ∼10 19 cm -3 is the highest concentration reported so far for this compound. This further leads to the highest thermoelectric figure of merit, zT of 0.65, reported so far in polycrystalline SnS. The temperature-dependent Hall mobility shows a transition of carrier-scattering source from a grain boundary potential below 400 K to acoustic phonons at higher temperatures. The electronic transport properties can be well understood by a single parabolic band (SPB) model, enabling a quantitative guidance for maximizing the thermoelectric power factor. Using the experimental lattice thermal conductivity, a maximal zT of 0.8 at 850 K is expected when the carrier concentration is further increased to ∼1 × 10 20 cm -3 , according to the SPB model. This work not only demonstrates SnS as a promising low-cost thermoelectric material but also details the material parameters that fundamentally determine the thermoelectric properties.

Intrinsic superspin Hall current

NASA Astrophysics Data System (ADS)

Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

2017-09-01

We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

HEDSA Town Hall Meeting

NASA Astrophysics Data System (ADS)

Afeyan, Bedros

2017-10-01

HEDSA will hold its Town Hall meeting on Wednesday October 25 at 12:30pm in the Wisconsin Center. The new steering committee members and HEDSA leadership will be announced. A report will be given on 2017 HEDSA activities. Program Managers from Federal Funding Agencies such as OFES, NNSA, AFOSR and NSF will provide updates on the state of sponsored research in HED plasmas, and to engage the community in an open dialogue. The HEDSA Town Hall is a ``bring your own lunch'' meeting. Current members of HEDSA and all graduate students are strongly encouraged to attend. To join HEDSA please visit HEDSA.org

Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

NASA Astrophysics Data System (ADS)

Yin, Gen; Zang, Jiadong; Lake, Roger

2014-03-01

Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

Training Top 10 Hall of Fame

ERIC Educational Resources Information Center

Training, 2012

2012-01-01

Microsoft Corporation and SCC Soft Computer are the newest inductees into the Training Top 10 Hall of Fame, joining the ranks of the 11 companies named to the hall since its inception in 2008 (Wyeth Pharmaceuticals subsequently was acquired by Pfizer Inc. in 2009). These 11 companies held Top 10 spots in the Training Top 50, Top 100, and now Top…

5. ROOFTOPS, ISHERWOOD HALL (BUILDING NO. 104), GRIFFIN (BUILDING NO. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. ROOFTOPS, ISHERWOOD HALL (BUILDING NO. 104), GRIFFIN (BUILDING NO. 110), MELVILLE HALL (BUILDING NO. 116) LOOKING WEST FROM CLOCK TOWER OF MAHAN HALL - U.S. Naval Academy, Annapolis, Anne Arundel County, MD

Performance of an 8 kW Hall Thruster

DTIC Science & Technology

2000-01-12

For the purpose of either orbit raising and/or repositioning the Hall thruster must be capable of delivering sufficient thrust to minimize transfer...time. This coupled with the increasing on-board electric power capacity of military and commercial satellites, requires a high power Hall thruster that...development of a novel, high power Hall thruster , capable of efficient operation over a broad range of Isp and thrust. We call such a thruster the bi

Spontaneous Hall effect in a chiral p-wave superconductor

NASA Astrophysics Data System (ADS)

Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

2001-08-01

In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

Tutorial: Physics and modeling of Hall thrusters

NASA Astrophysics Data System (ADS)

Boeuf, Jean-Pierre

2017-01-01

Hall thrusters are very efficient and competitive electric propulsion devices for satellites and are currently in use in a number of telecommunications and government spacecraft. Their power spans from 100 W to 20 kW, with thrust between a few mN and 1 N and specific impulse values between 1000 and 3000 s. The basic idea of Hall thrusters consists in generating a large local electric field in a plasma by using a transverse magnetic field to reduce the electron conductivity. This electric field can extract positive ions from the plasma and accelerate them to high velocity without extracting grids, providing the thrust. These principles are simple in appearance but the physics of Hall thrusters is very intricate and non-linear because of the complex electron transport across the magnetic field and its coupling with the electric field and the neutral atom density. This paper describes the basic physics of Hall thrusters and gives a (non-exhaustive) summary of the research efforts that have been devoted to the modelling and understanding of these devices in the last 20 years. Although the predictive capabilities of the models are still not sufficient for a full computer aided design of Hall thrusters, significant progress has been made in the qualitative and quantitative understanding of these devices.

Measured Early Lateral Energy Fractions in Concert Halls and Opera Houses

NASA Astrophysics Data System (ADS)

BARRON, M.

2000-04-01

In the 30 years since early lateral reflections were first suggested as important for concert halls, spatial impression and source broadening have become almost universally accepted as essential characteristics of halls with good acoustics. Two objective measures of source broadening have been proposed. Measured values of the best defined of these measures, the early lateral energy fraction (LF), are considered here. Results from two independent measurement surveys are discussed. Comparisons of LF values by hall show a significant link between hall mean LF and hall width. There is however considerable overlap between measured LF values in different halls so the relevance of describing halls by their mean early lateral energy fraction values is questionable. The behaviour of LF values within auditoria is discussed for different concert hall plan forms and within opera houses. A measure of source broadening including sound level is proposed and results considered in the context of auditorium design.

Destruction of the Fractional Quantum Hall Effect by Disorder

DOE R&D Accomplishments Database

Laughlin, R. B.

1985-07-01

It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

NASA Astrophysics Data System (ADS)

Levin, E. M.; Howard, A.; Straszheim, W. E.

2015-03-01

XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(₃- δ/₂).

PubMed

Onoda, Masashige; Tsukahara, Shuichi

2011-02-02

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(3 - δ/2) with 0.0046 ≤ δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10( - 3) W m( - 1) K( - 2) with the carrier concentration of 2 × 10(20) cm( - 3) at around the Fermi energy comparable to the Debye temperature.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2

NASA Astrophysics Data System (ADS)

Onoda, Masashige; Tsukahara, Shuichi

2011-02-01

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2 with 0.0046 <= δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10 - 3 W m - 1 K - 2 with the carrier concentration of 2 × 1020 cm - 3 at around the Fermi energy comparable to the Debye temperature.

Skyrmion formation and optical spin-Hall effect in an expanding coherent cloud of indirect excitons.

PubMed

Vishnevsky, D V; Flayac, H; Nalitov, A V; Solnyshkov, D D; Gippius, N A; Malpuech, G

2013-06-14

We provide a theoretical description of the polarization pattern and phase singularities experimentally evidenced recently in a condensate of indirect excitons [H. High et al., Nature 483, 584 (2012)]. We show that the averaging of the electron and hole orbital motion leads to a comparable spin-orbit interaction for both types of carriers. We demonstrate that the interplay between a radial coherent flux of bright indirect excitons and the Dresselhaus spin-orbit interaction results in the formation of spin domains and of topological defects similar to Skyrmions. We reproduce qualitatively all the features of the experimental data and obtain a polarization pattern as in the optical spin-Hall effect despite the different symmetry of the spin-orbit interactions.

27. FIRST FLOOR CENTRAL HALL, EAST WALL, DETAIL OF ENTABLATURE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

27. FIRST FLOOR CENTRAL HALL, EAST WALL, DETAIL OF ENTABLATURE SHOWING EGG AND DART OVOLO AND GUTTAE OF THE THIRD MUTULE FROM THE SOUTHEAST CORNER - Independence Hall Complex, Independence Hall, 500 Chestnut Street, Philadelphia, Philadelphia County, PA

A Magnetic Tracking System based on Highly Sensitive Integrated Hall Sensors

NASA Astrophysics Data System (ADS)

Schlageter, Vincent; Drljaca, Predrag; Popovic, Radivoje S.; KuČERA, Pavel

A tracking system with five degrees of freedom based on a 2D-array of 16 Hall sensors and a permanent magnet is presented in this paper. The sensitivity of the Hall sensors is increased by integrated micro- and external macro-flux-concentrators. Detection distance larger than 20cm (during one hour without calibration) is achieved using a magnet of 0.2cm3. This corresponds to a resolution of the sensors of 0.05µTrms. The position and orientation of the marker is displayed in real time at least 20 times per second. The sensing system is small enough to be hand-held and can be used in a normal environment. This presented tracking system has been successfully applied to follow a small swallowed magnet through the entire human digestive tube. This approach is extremely promising as a new non-invasive diagnostic technique in gastro-enterology.

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

PubMed

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Establishment of a Hall Thruster Cluster

DTIC Science & Technology

2004-02-01

DURIP funds were used to develop a Hall thruster cluster test facility centered around the University of Michigan Large Vacuum Test Facility and a 2x2 cluster of BUSEK 600 W BHT-600 Hall thrusters. This capability will facilitate our three-year program to address the issue of high-power CDT operation and to provide insight on how chamber effects influence CDT engine/cluster characteristics.

Direct observation of the skyrmion Hall effect

DOE PAGES

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang; ...

2016-09-19

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Plasmon Geometric Phase and Plasmon Hall Shift

NASA Astrophysics Data System (ADS)

Shi, Li-kun; Song, Justin C. W.

2018-04-01

The collective plasmonic modes of a metal comprise a simple pattern of oscillating charge density that yields enhanced light-matter interaction. Here we unveil that beneath this familiar facade plasmons possess a hidden internal structure that fundamentally alters its dynamics. In particular, we find that metals with nonzero Hall conductivity host plasmons with an intricate current density configuration that sharply departs from that of ordinary zero Hall conductivity metals. This nontrivial internal structure dramatically enriches the dynamics of plasmon propagation, enabling plasmon wave packets to acquire geometric phases as they scatter. At boundaries, these phases accumulate allowing plasmon waves that reflect off to experience a nonreciprocal parallel shift. This plasmon Hall shift, tunable by Hall conductivity as well as plasmon wavelength, displaces the incident and reflected plasmon trajectories and can be readily probed by near-field photonics techniques. Anomalous plasmon geometric phases dramatically enrich the nanophotonics toolbox, and yield radical new means for directing plasmonic beams.

Direct observation of the skyrmion Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Reactive carriers of immobilized compounds.

PubMed

Coupek, J; Labský, J; Kálal, J; Turková, J; Valentová, O

1977-04-12

Sphericanl macroporous reactive carriers capable of forming covalent bonds with amino acids and proteins were prepared by the suspension copolymerization of 2-hydroxyethyl methacrylate, ethylene dimethacrylate and p-nitrophenyl esters of methacrylic acid and methacryloyl derivatives of glycine, beta-alanine and epsilon-aminocaproic acid. The effect of the spacer length, pH and the type of the buffer used, concentration of reactive groups in the copolymer, concentration of the ligand and the participation of the hydrolytic and aminolytic reaction of p-nitrophenyl functional groups in the attachment of glycine, D,L-phenylalanine and serumalbumin was studied. Macroporous copolymers containing reactive functional groups can be used as active enzyme carriers, if their activity is not blocked by the presence of p-nitrophenol split off in the attachment reaction.

L'effet Hall Quantique

NASA Astrophysics Data System (ADS)

Samson, Thomas

Nous proposons une methode permettant d'obtenir une expression pour la conductivite de Hall de structures electroniques bidimensionnelles et nous examinons celle -ci a la limite d'une temperature nulle dans le but de verifier l'effet Hall quantique. Nous allons nous interesser essentiellement a l'effet Hall quantique entier et aux effets fractionnaires inferieurs a un. Le systeme considere est forme d'un gaz d'electrons en interaction faible avec les impuretes de l'echantillon. Le modele du gaz d'electrons consiste en un gaz bidimensionnel d'electrons sans spin expose perpendiculairement a un champ magnetique uniforme. Ce dernier est decrit par le potentiel vecteur vec{rm A} defini dans la jauge de Dingle ou jauge symetrique. Conformement au formalisme de la seconde quantification, l'hamiltonien de ce gaz est represente dans la base des etats a un-corps de Dingle |n,m> et exprime ainsi en terme des operateurs de creation et d'annihilation correspondants a_sp{ rm n m}{dag} et a _{rm n m}. Nous supposons de plus que les electrons du niveau fondamental de Dingle interagissent entre eux via le potentiel coulombien. La methode utilisee fait appel a une equation mai tresse a N-corps, de nature quantique et statistique, et verifiant le second principe de la thermodynamique. A partir de celle-ci, nous obtenons un systeme d'equations differentielles appele hierarchie d'equations quantique dont la resolution nous permet de determiner une equation a un-corps, dite de Boltzmann quantique, et dictant l'evolution de la moyenne statistique de l'operateur non-diagonal a _sp{rm n m}{dag } a_{rm n}, _{rm m}, sous l'action du champ electrique applique vec{rm E}(t). C'est sa solution Tr(p(t) a _sp{rm n m}{dag} a_{rm n},_ {rm m}), qui definit la relation de convolution entre la densite courant de Hall vec{rm J}_{rm H }(t) et le champ electrique vec {rm E}(t) dont la transformee de Laplace-Fourier du noyau nous fournit l'expression de la conductivite de Hall desiree. Pour une valeur de

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

NASA Astrophysics Data System (ADS)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Piezo Voltage Controlled Planar Hall Effect Devices

PubMed Central

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-01-01

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

Piezo Voltage Controlled Planar Hall Effect Devices.

PubMed

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Acoustic Requirements for a Multi-Purpose Hall.

ERIC Educational Resources Information Center

Schulte, W. Allen

2002-01-01

This case study examines the proposed design of a new lecture/recital hall in Centennial Hall at Lynchburg College that will be used for lectures, public events, a film studies course, and musical recitals. It explores the audio-visual challenges presented by the differing acoustical requirements for the building. (EV)

Change of carrier density at the pseudogap critical point of a cuprate superconductor.

PubMed

Badoux, S; Tabis, W; Laliberté, F; Grissonnanche, G; Vignolle, B; Vignolles, D; Béard, J; Bonn, D A; Hardy, W N; Liang, R; Doiron-Leyraud, N; Taillefer, Louis; Proust, Cyril

2016-03-10

The pseudogap is a partial gap in the electronic density of states that opens in the normal (non-superconducting) state of cuprate superconductors and whose origin is a long-standing puzzle. Its connection to the Mott insulator phase at low doping (hole concentration, p) remains ambiguous and its relation to the charge order that reconstructs the Fermi surface at intermediate doping is still unclear. Here we use measurements of the Hall coefficient in magnetic fields up to 88 tesla to show that Fermi-surface reconstruction by charge order in the cuprate YBa2Cu3Oy ends sharply at a critical doping p = 0.16 that is distinctly lower than the pseudogap critical point p* = 0.19 (ref. 11). This shows that the pseudogap and charge order are separate phenomena. We find that the change in carrier density n from n = 1 + p in the conventional metal at high doping (ref. 12) to n = p at low doping (ref. 13) starts at the pseudogap critical point. This shows that the pseudogap and the antiferromagnetic Mott insulator are linked.

Experimental test of 200 W Hall thruster with titanium wall

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Sun, Hezhi; Peng, Wuji; Xu, Yu; Wei, Liqiu; Li, Hong; Li, Peng; Su, Hongbo; Yu, Daren

2017-05-01

We designed a 200 W Hall thruster based on the technology of pushing down a magnetic field with two permanent magnetic rings. Boron nitride (BN) is an important insulating wall material for Hall thrusters. The discharge characteristics of the designed Hall thruster were studied by replacing BN with titanium (Ti). Experimental results show that the designed Hall thruster can discharge stably for a long time under a Ti channel. Experiments were performed to determine whether the channel and cathode are electrically connected. When the channel wall and cathode are insulated, the divergence angle of the plume increases, but the performance of the Hall thruster is improved in terms of thrust, specific impulse, anode efficiency, and thrust-to-power ratio. Ti exhibits a powerful antisputtering capability, a low emanation rate of gas, and a large structural strength, making it a potential candidate wall material in the design of low-power Hall thrusters.

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banik, Ananya; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in

SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1–6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases themore » excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600–900 K for Sn{sub 1−x}Ag{sub x}Te{sub 1−x}I{sub x} samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Graphical abstract: Significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands resulted in a maximum thermoelectric figure of merit, zT, of ~1.05 at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Highlights: • AgI alloying in SnTe increases the principle band gap. • Hole concentration reduction and valence band convergence enhances thermopower of SnTe-AgI. • A maximum zT of ~1.05 was achieved at 860 K in p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}.« less

Magnetometry of micro-magnets with electrostatically defined Hall bars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent

2015-11-30

Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large currentmore » density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.« less

Magnesium Hall Thruster

NASA Technical Reports Server (NTRS)

Szabo, James J.

2015-01-01

This Phase II project is developing a magnesium (Mg) Hall effect thruster system that would open the door for in situ resource utilization (ISRU)-based solar system exploration. Magnesium is light and easy to ionize. For a Mars- Earth transfer, the propellant mass savings with respect to a xenon Hall effect thruster (HET) system are enormous. Magnesium also can be combusted in a rocket with carbon dioxide (CO2) or water (H2O), enabling a multimode propulsion system with propellant sharing and ISRU. In the near term, CO2 and H2O would be collected in situ on Mars or the moon. In the far term, Mg itself would be collected from Martian and lunar regolith. In Phase I, an integrated, medium-power (1- to 3-kW) Mg HET system was developed and tested. Controlled, steady operation at constant voltage and power was demonstrated. Preliminary measurements indicate a specific impulse (Isp) greater than 4,000 s was achieved at a discharge potential of 400 V. The feasibility of delivering fluidized Mg powder to a medium- or high-power thruster also was demonstrated. Phase II of the project evaluated the performance of an integrated, highpower Mg Hall thruster system in a relevant space environment. Researchers improved the medium power thruster system and characterized it in detail. Researchers also designed and built a high-power (8- to 20-kW) Mg HET. A fluidized powder feed system supporting the high-power thruster was built and delivered to Busek Company, Inc.

Overcoming Film Quality Issues for Conjugated Polymers Doped with F4TCNQ by Solution Sequential Processing: Hall Effect, Structural, and Optical Measurements.

PubMed

Scholes, D Tyler; Hawks, Steven A; Yee, Patrick Y; Wu, Hao; Lindemuth, Jeffrey R; Tolbert, Sarah H; Schwartz, Benjamin J

2015-12-03

We demonstrate that solution-sequential processing (SqP) can yield heavily doped pristine-quality films when used to infiltrate the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into pure poly(3-hexylthiophene) (P3HT) polymer layers. Profilometry measurements show that the SqP method produces doped films with essentially the same surface roughness as pristine films, and 2-D grazing-incidence wide-angle X-ray scattering (GIWAXS) confirms that SqP preserves both the size and orientation of the pristine polymer's crystallites. Unlike traditional blend-cast F4TCNQ/P3HT doped films, our sequentially processed layers have tunable and reproducible conductivities reaching as high as 5.5 S/cm even when measured over macroscopic (>1 cm) distances. The high conductivity and superb film quality allow for meaningful Hall effect measurements, which reveal p-type conduction and carrier concentrations tunable from 10(16) to 10(20) cm(-3) and hole mobilities ranging from ∼0.003 to 0.02 cm(2) V(-1) s(-1) at room temperature over the doping levels examined.

20th Annual Residence Hall Construction Report

ERIC Educational Resources Information Center

Agron, Joe

2009-01-01

Even in difficult economic times, colleges and universities continue to invest in residence hall construction projects as a way to attract new students and keep existing ones on campus. According to data from "American School & University"'s 20th annual Residence Hall Construction Report, the median new project completed in 2008 was…

Residence Hall Fires.

ERIC Educational Resources Information Center

Wright, Dorothy

1999-01-01

Discusses how one college's experience with a tragic fire in one of its residence halls prompted a reevaluation of its fire-prevention-and-response strategies. Staff training, sprinkler installation, new alarm systems, and exit hardware to help make building exiting more efficient are discussed. (GR)

Tunnelling anomalous and planar Hall effects (Conference Presentation)

NASA Astrophysics Data System (ADS)

Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor

2016-10-01

We theoretically show how the interplay between spin-orbit coupling (SOC) and magnetism can result in a finite tunneling Hall conductance, transverse to the applied bias. For two-dimensional tunnel junctions with a ferromagnetic lead and magnetization perpendicular to the current flow, the detected anomalous Hall voltage can be used to extract information not only about the spin polarization but also about the strength of the interfacial SOC. In contrast, a tunneling current across a ferromagnetic barrier on the surface of a three-dimensional topological insulator (TI) can induce a planar Hall response even when the magnetization is oriented along the current flow[1]. The tunneling nature of the states contributing to the planar Hall conductance can be switched from the ordinary to the Klein regimes by the electrostatic control of the barrier strength. This allows for an enhancement of the transverse response and a giant Hall angle, with the tunneling planar Hall conductance exceeding the longitudinal component. Despite the simplicity of a single ferromagnetic region, the TI/ferromagnet system exhibits a variety of functionalities. In addition to a spin-valve operation for magnetic sensing and storing information, positive, negative, and negative differential conductances can be tuned by properly adjusting the barrier potential and/or varying the magnetization direction. Such different resistive behaviors in the same system are attractive for potential applications in reconfigurable spintronic devices. [1] B. Scharf, A. Matos-Abiague, J. E. Han, E. M. Hankiewicz, and I. Zutic, arXiv:1601.01009 (2016).

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2015-01-01

The NASA Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in-space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This paper describes the electrical configuration testing of the HERMeS TDU-1 Hall thruster in NASA Glenn Research Center's Vacuum Facility 5. The three electrical configurations examined were 1) thruster body tied to facility ground, 2) thruster floating, and 3) thruster body electrically tied to cathode common. The HERMeS TDU-1 Hall thruster was also configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Perception of music dynamics in concert hall acoustics.

PubMed

Pätynen, Jukka; Lokki, Tapio

2016-11-01

Dynamics is one of the principal means of expressivity in Western classical music. Still, preceding research on room acoustics has mostly neglected the contribution of music dynamics to the acoustic perception. This study investigates how the different concert hall acoustics influence the perception of varying music dynamics. An anechoic orchestra signal, containing a step in music dynamics, was rendered in the measured acoustics of six concert halls at three seats in each. Spatial sound was reproduced through a loudspeaker array. By paired comparison, naive subjects selected the stimuli that they considered to change more during the music. Furthermore, the subjects described their foremost perceptual criteria for each selection. The most distinct perceptual factors differentiating the rendering of music dynamics between halls include the dynamic range, and varying width of sound and reverberance. The results confirm the hypothesis that the concert halls render the performed music dynamics differently, and with various perceptual aspects. The analysis against objective room acoustic parameters suggests that the perceived dynamic contrasts are pronounced by acoustics that provide stronger sound and more binaural incoherence by a lateral sound field. Concert halls that enhance the dynamics have been found earlier to elicit high subjective preference.

Carrier-mediated transport of riboflavin in the rat colon.

PubMed

Yuasa, H; Hirobe, M; Tomei, S; Watanabe, J

2000-03-01

Carriers involved in riboflavin transport have generally been presumed to be localized in the upper small intestine. However, using a closed loop technique, we found that in the rat colon the absorption of riboflavin could be significantly reduced by raising the concentration from 0.1 to 200 microM and by adding lumiflavin, an analogue of riboflavin. These results suggest that saturable transport by the carrier that is specific for riboflavin and analogues may also be involved in riboflavin absorption in the colon. At the lower concentration of 0.1 microM, carrier-mediated transport was suggested to prevail, compared with passive transport, both in the colon and the small intestine. Furthermore, carrier-mediated transport in the colon was comparable with that in the small intestine. This study is the first to suggest carrier-mediated riboflavin transport in the colon. Although the riboflavin transport system in the colon needs to be subjected to more detailed investigation of its transport functions and role in riboflavin absorption after oral administration, it would be of interest to explore potential use of this carrier as a system for drug delivery.

Effect of surfactant concentration and solidification temperature on the characteristics and stability of nanostructured lipid carrier (NLC) prepared from rambutan (Nephelium lappaceum L.) kernel fat.

PubMed

Witayaudom, Pimchanok; Klinkesorn, Utai

2017-11-01

Nanostructured lipid carrier (NLC) was fabricated from rambutan (Nephelium lappaceum L.) kernel fat stabilized with Tween 80 in this present work. The influence of the Tween 80 concentration (0.025, 0.05, 0.1, 0.2, 0.5 and 1.0wt%) and solidification temperature (5 and 25°C) on the characteristics and stability of the NLC were investigated. The results showed that an increase in the Tween 80 concentration caused decreased zeta-potential (ζ-potential) and particle size (Z-average) with no significant effect on the polydispersity index (PDI). Lipid particles in the NLC at all Tween 80 concentrations had a tendency to grow and the PDI tended to increase due to Ostwald ripening upon storage over 28days. At least 0.2wt% Tween 80 concentrations could be used to stabilize 1wt% rambutan NLC. The solidification temperature affected the microstructure, melting behavior and stability of rambutan NLC. Pre-solidification at 5°C could create stable NLC with monodispersed-spherical lipid particles. Consequently, these stable NLC particles produced from rambutan kernel fat may serve as useful carriers for the delivery of bioactive lipophilic nutraceuticals. Copyright © 2017 Elsevier Inc. All rights reserved.

A variational theory of Hall effect of Anderson lattice model: Application to colossal magnetoresistance manganites (Re1-x Ax MnO3)

NASA Astrophysics Data System (ADS)

Panwar, Sunil; Kumar, Vijay; Singh, Ishwar

2017-10-01

qualitative behavior as the zero-field electrical resistivity. Moreover Hall Constant (RH) shows positive values indicating that the carriers in these manganites are holes.

Localization in a quantum spin Hall system.

PubMed

Onoda, Masaru; Avishai, Yshai; Nagaosa, Naoto

2007-02-16

The localization problem of electronic states in a two-dimensional quantum spin Hall system (that is, a symplectic ensemble with topological term) is studied by the transfer matrix method. The phase diagram in the plane of energy and disorder strength is exposed, and demonstrates "levitation" and "pair annihilation" of the domains of extended states analogous to that of the integer quantum Hall system. The critical exponent nu for the divergence of the localization length is estimated as nu congruent with 1.6, which is distinct from both exponents pertaining to the conventional symplectic and the unitary quantum Hall systems. Our analysis strongly suggests a different universality class related to the topology of the pertinent system.

Polymer coating and stress test for carrier density stabilization in epitaxial graphene

NASA Astrophysics Data System (ADS)

Rigosi, Albert; Liu, Chieh-I.; Yang, Yanfei; Obrzut, Jan; Lee, Hsin Yen; Bittle, Emily; Elmquist, Randolph

Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of a quantum Hall resistance (QHR) standard. A clean fabrication process was used to produce EG-QHR devices with a n-type doping level of order 1011 cm-2, which delivers the metrological accuracy at the ν = 2 plateau in a moderate magnetic field (<9 T). However, the ν = 2 plateau deviates from h/2e2 quickly as the carrier density shifts close to the Dirac point (<1010 cm-2) , and this observation occurs over time as EG is exposed to air, allowing for complexation with p-type molecular dopants. Here we report experimental results on the use of parylene C as an encapsulation layer, whereby EG can maintain its carrier density level under ambient laboratory conditions for a few months. Furthermore, we varied the parylene C thicknesses and the controllable temperatures (up to 85° C) and humidities (up to 85%). We monitored the electronic properties of our EG samples by low temperature magnetotransport measurements in a 9 T superconducting magnet cryostat, and room temperature surface conductance in a resonant microwave cavity. We will compare parylene C, Cytop, and PMMA and show that polymer encapsulation may offer a solution to the problem of carrier density instability from atmospheric doping.

Plume Characteristics of the BHT-HD-600 Hall Thruster (Preprint)

DTIC Science & Technology

2006-07-01

Hall thruster on spacecraft, a number of plume properties have been measured. These include current density using a Faraday probe, ion energy distribution using a retarding potential analyzer, and ion species fractions using an E x B probe. The BHT-HD-600 Hall thruster is a nominally 600 W xenon Hall thruster developed by Busek Co. Inc. for the U.S. Air Force Research Laboratory. Plume characterization of Hall thrusters is required to fully understand the impacts of thruster operation on spacecraft. Much of these plume data are

Facilty Focus: Residence Halls.

ERIC Educational Resources Information Center

Hunnewell, James F., Jr.

2002-01-01

Describes the Western Ridge Residence at Colorado College and Beard Hall at Wheaton College. The buildings feature multiple levels that take advantage of views and also help create a "homey" feeling. (EV)

A holographic model for the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

A New Definition in Atlanta: Q&A with Beverly Hall

ERIC Educational Resources Information Center

Crow, Tracy

2010-01-01

Beverly Hall has been superintendent of Atlanta Public Schools since 1999. Before coming to Atlanta, Hall was state district superintendent of Newark Public Schools, deputy chancellor for instruction of New York City Public Schools, superintendent of Community School District 27 in New York City, and a principal in Brooklyn. Hall chairs Harvard…

Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

DOE PAGES

Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; ...

2016-01-01

Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga 0.75In 0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvementsmore » in the minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.« less

Quantum Hall Ferroelectrics and Nematics in Multivalley Systems

NASA Astrophysics Data System (ADS)

Sodemann, Inti; Zhu, Zheng; Fu, Liang

2017-10-01

We study broken symmetry states at integer Landau-level fillings in multivalley quantum Hall systems whose low-energy dispersions are anisotropic. When the Fermi surface of individual pockets lacks twofold rotational symmetry, like in bismuth (111) [Feldman et al. , Observation of a Nematic Quantum Hall Liquid on the Surface of Bismuth, Science 354, 316 (2016), 10.1126/science.aag1715] and in Sn1 -xPbxSe (001) [Dziawa et al., Topological Crystalline Insulator States in Pb1 -xSnxSe , Nat. Mater. 11, 1023 (2012), 10.1038/nmat3449] surfaces, interactions tend to drive the formation of quantum Hall ferroelectric states. We demonstrate that the dipole moment in these states has an intimate relation to the Fermi surface geometry of the parent metal. In quantum Hall nematic states, like those arising in AlAs quantum wells, we demonstrate the existence of unusually robust Skyrmion quasiparticles.

Concentration and mobility of charge carriers in thin polymers at high temperature determined by electrode polarization modeling

NASA Astrophysics Data System (ADS)

Diaham, Sombel; Locatelli, Marie-Laure

2012-07-01

Charge carrier concentration (n0) and effective mobility (μeff) are reported in two polymer films (<10 μm) and in a very high temperature range (from 200 to 400 °C). This was possible thanks to an electrode polarization modeling of broadband dielectric spectroscopy data. It is shown that the glass transition temperature (Tg) occurrence has a strong influence on the temperature dependence of n0 and μeff. We carry out that n0 presents two distinct Arrhenius-like behaviors below and above Tg, while μeff exhibits a Vogel-Fulcher-Tamman behavior only above Tg whatever the polymer under study. For polyimide films, n0 varies from 1 × 1014 to 4 × 1016 cm-3 and μeff from 1 × 10-8 to 2 × 10-6 cm2 V-1 s-1 between 200 °C to 400 °C. Poly(amide-imide) films show n0 values between 6 × 1016 and 4 × 1018 cm-3 from 270 °C to 400 °C, while μeff varies between 1 × 10-10 and 2 × 10-7 cm2 V-1 s-1. Considering the activation energies of these physical parameters in the temperature range of investigation, n0 and μeff values appear as coherent with those reported in the literature at lower temperature (<80 °C). Surface charge carrier concentrations (nS) are reported and discussed for potential passivation (i.e., surface electrical insulation) applications. Polyimide films appear as good candidates due to nS values less than 1011 cm-2 up to 300 °C.

Nonequilibrium Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, F. Nur; Mueller, Erich; Oktel, M. O.

2017-04-01

We theoretically study the Hall response of a lattice system following a quench where the topology of a filled band is suddenly changed. In the limit where the physics is dominated by a single Dirac cone, we find that the change in the Hall conductivity is two-thirds of the quantum of conductivity. We explore this universal behavior in the Haldane model, and discuss cold-atom experiments for its observation. Beyond linear response, the Hall effect crosses over from fractional to integer values. We investigate finite-size effects, and the role of the harmonic confinement. Furthermore, we explore the magnetic field quenches in ladders formed in synthetic dimensions. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

End-hall thrusters

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.; Day, M. L.; Haag, T. W.

1990-01-01

The end-Hall thruster can provide electric propulsion with fixed masses, specific impulses, and power-to-thrust ratios intermediate of an arcjet and a gridded (electrostatic) ion thruster. With these characteristics, this thruster is a candidate for missions of intermediate difficulty, such as the north-south stationkeeping of geostationary satellites.

Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560 013; Bhat, Thirumaleshwara N.

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics ofmore » a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.« less

Diagnostics Systems for Permanent Hall Thrusters Development

NASA Astrophysics Data System (ADS)

Ferreira, Jose Leonardo; Soares Ferreira, Ivan; Santos, Jean; Miranda, Rodrigo; Possa, M. Gabriela

This work describes the development of Permanent Magnet Hall Effect Plasma Thruster (PHALL) and its diagnostic systems at The Plasma Physics Laboratory of University of Brasilia. The project consists on the construction and characterization of plasma propulsion engines based on the Hall Effect. Electric thrusters have been employed in over 220 successful space missions. Two types stand out: the Hall-Effect Thruster (HET) and the Gridded Ion Engine (GIE). The first, which we deal with in this project, has the advantage of greater simplicity of operation, a smaller weight for the propulsion subsystem and a longer shelf life. It can operate in two configurations: magnetic layer and anode layer, the difference between the two lying in the positioning of the anode inside the plasma channel. A Hall-Effect Thruster-HET is a type of plasma thruster in which the propellant gas is ionized and accelerated by a magneto hydrodynamic effect combined with electrostatic ion acceleration. So the essential operating principle of the HET is that it uses a J x B force and an electrostatic potential to accelerate ions up to high speeds. In a HET, the attractive negative charge is provided by electrons at the open end of the Thruster instead of a grid, as in the case of the electrostatic ion thrusters. A strong radial magnetic field is used to hold the electrons in place, with the combination of the magnetic field and the electrostatic potential force generating a fast circulating electron current, the Hall current, around the axis of the Thruster, mainly composed by drifting electrons in an ion plasma background. Only a slow axial drift towards the anode occurs. The main attractive features of the Hall-Effect Thruster are its simple design and operating principles. Most of the Hall-Effect Thrusters use electromagnet coils to produce the main magnetic field responsible for plasma generation and acceleration. In this paper we present a different new concept, a Permanent Magnet Hall

Formulation of the relativistic quantum Hall effect and parity anomaly

NASA Astrophysics Data System (ADS)

Yonaga, Kouki; Hasebe, Kazuki; Shibata, Naokazu

2016-06-01

We present a relativistic formulation of the quantum Hall effect on Haldane sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term. We clarify particular features of the relativistic quantum Hall states with the use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to the relativistic quantum Hall states are investigated in detail. The mass term acts as an interpolating parameter between the relativistic and nonrelativistic quantum Hall effects. It is pointed out that the mass term unevenly affects the many-body physics of the positive and negative Landau levels as a manifestation of the "parity anomaly." In particular, we explicitly demonstrate the instability of the Laughlin state of the positive first relativistic Landau level with the reduction of the charge gap.

Suppression of compensating native defect formation during semiconductor processing via excess carriers

NASA Astrophysics Data System (ADS)

Alberi, K.; Scarpulla, M. A.

2016-06-01

In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are often responsible. Suppressing the concentrations of compensating defects during processing close to thermal equilibrium is difficult because formation enthalpies are lowered as the Fermi level moves towards the majority band edge. Excess carriers, introduced for example by photogeneration, modify the formation enthalpy of semiconductor defects and thus can be harnessed during crystal growth or annealing to suppress defect populations. Herein we develop a rigorous and general model for defect formation in the presence of steady-state excess carrier concentrations by combining the standard quasi-chemical formalism with a detailed-balance description that is applicable for any defect state in the bandgap. Considering the quasi-Fermi levels as chemical potentials, we demonstrate that increasing the minority carrier concentration increases the formation enthalpy for typical compensating centers, thus suppressing their formation. This effect is illustrated for the specific example of GaSb. While our treatment is generalized for excess carrier injection or generation in semiconductors by any means, we provide a set of guidelines for applying the concept in photoassisted physical vapor deposition.

4. MESS HALL, FRONT DETAIL OVER DOOR, LOOKING EAST. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. MESS HALL, FRONT DETAIL OVER DOOR, LOOKING EAST. - NIKE Missile Base C-84, Mess Hall, North of Launch Area Entrance Drive, east of Officers' Quarters & Administration Building, Barrington, Cook County, IL

3. MESS HALL, REAR SIDE, LOOKING NORTH. NIKE Missile ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. MESS HALL, REAR SIDE, LOOKING NORTH. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

2. MESS HALL, RIGHT SIDE, LOOKING EAST. NIKE Missile ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. MESS HALL, RIGHT SIDE, LOOKING EAST. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

DTIC Science & Technology

2017-06-30

17394 4 / 13 HALL EFFECT THRUSTERS Hall Effect Thrusters (HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid...HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ...Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ Electron ExB Drift Unmagnetized Ions Results in Hall Current

Carrier removal and defect behavior in p-type InP

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun

2014-12-28

We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that themore » trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.« less

The effect of Mg-doping and Cu nonstoichiometry on the photoelectrochemical response of CuFeO 2

DOE PAGES

Wuttig, Anna; Krizan, Jason W.; Gu, Jing; ...

2016-11-14

Here, we report the tuning of CuFeO 2 photoelectrodes by Mg doping and Cu deficiency to demonstrate the effects of carrier concentration on the photoresponse. Carrier type and concentration were quantitatively assessed using the Hall effect on pure, Mg-incorporated, and Cu-deficient pellets (CuFe 1–xMg xO 2 and Cu 1–yFeO 2, x = 0, 0.0005, 0.005, 0.02, and y = 0.005, 0.02) over the range of thermodynamic stability achievable using solid-state synthesis. The same samples were used in a photoelectrochemical cell to measure their photoresponse. We find that the material with the lowest p-type carrier concentration and the highest carrier mobilitymore » shows the largest photoresponse. Furthermore, we show that increasing the p-type carrier concentration and thus the conductivity to high levels is limited by the delafossite defect chemistry, which changes the majority carrier type from p-type to n-type near the Mg solubility limit (x = 0.05) and at high Cu defect concentrations.« less

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

PubMed

Mani, Arjun; Benjamin, Colin

2016-04-13

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

NASA Astrophysics Data System (ADS)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Hall effect in high- Tc Y 1Ba 2Cu 3O 7-δ superconductor

NASA Astrophysics Data System (ADS)

Vezzoli, G. C.; Burke, T.; Moon, B. M.; Lalevic, B.; Safari, A.; Sundar, H. G. K.; Bonometti, R.; Alexander, C.; Rau, C.; Waters, K.

1989-04-01

We have performed point-by-point and continuous Hall effect experiments as a function of temperature in polycrystalline Y 1Ba 2Cu 3O 7-δ. We have shown that the positive Hall constant shows an abrupt increase upon decreasing temperature at a value just above Tc. This temperature corresponds to where the resistance versus temperature data deviates from linearity. At very high fields of 6.8 and 15 T we observe a subsequent decrease in RH. We interpret these data as supportive of a contribution toward the superconductivity mechanism arising from internal excitions or change transfer excitations such that the bound exciton concentration increases near Tc at the expense of positive carries which are reflected in both bound and free holes.

5. MESS HALL, RIGHT AND REAR SIDES, LOOKING NORTHEAST. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. MESS HALL, RIGHT AND REAR SIDES, LOOKING NORTHEAST. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

6. PHOTOCOPY, PLAN AND SCHEDULE DRAWING OF MESS HALL. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. PHOTOCOPY, PLAN AND SCHEDULE DRAWING OF MESS HALL. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

7. PHOTOCOPY, ELEVATION AND SECTION DRAWING OF MESS HALL. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

7. PHOTOCOPY, ELEVATION AND SECTION DRAWING OF MESS HALL. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

4. MESS HALL, FRONT AND LEFT SIDES, LOOKING SOUTHWEST. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. MESS HALL, FRONT AND LEFT SIDES, LOOKING SOUTHWEST. - NIKE Missile Base SL-40, Mess Hall, East central portion of base, southeast of Barracks No. 2, northwest of Administration Building, Hecker, Monroe County, IL

Limitations of high dose carrier based formulations.

PubMed

Yeung, Stewart; Traini, Daniela; Tweedie, Alan; Lewis, David; Church, Tanya; Young, Paul M

2018-06-10

This study was performed to investigate how increasing the active pharmaceutical ingredient (API) content within a formulation affects the dispersion of particles and the aerosol performance efficiency of a carrier based dry powder inhalable (DPI) formulation, using a custom dry powder inhaler (DPI) development rig. Five formulations with varying concentrations of API beclomethasone dipropionate (BDP) between 1% and 30% (w/w) were formulated as a multi-component carrier system containing coarse lactose and fine lactose with magnesium stearate. The morphology of the formulation and each component were investigated using scanning electron micrographs while the particle size was measured by laser diffraction. The aerosol performance, in terms of aerodynamic diameter, was assessed using the British pharmacopeia Apparatus E cascade impactor (Next generation impactor). Chemical analysis of the API was observed by high performance liquid chromatography (HPLC). Increasing the concentration of BDP in the blend resulted in increasing numbers and size of individual agglomerates and densely packed BDP multi-layers on the surface of the lactose carrier. BDP present within the multi-layer did not disperse as individual primary particles but as dense agglomerates, which led to a decrease in aerosol performance and increased percentage of BDP deposition within the Apparatus E induction port and pre-separator. As the BDP concentration in the blends increases, aerosol performance of the formulation decreases, in an inversely proportional manner. Concurrently, the percentage of API deposition in the induction port and pre-separator could also be linked to the amount of micronized particles (BDP and Micronized composite carrier) present in the formulation. The effect of such dose increase on the behaviour of aerosol dispersion was investigated to gain greater insight in the development and optimisation of higher dosed carrier-based formulations. Copyright © 2018 Elsevier B.V. All

Determination of intrinsic spin Hall angle in Pt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng

2014-10-13

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

Performance of a Low-Power Cylindrical Hall Thruster

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Markusic, Thomas E.; Stanojev, Boris J.; Dehoyos, Amado; Raitses, Yevgeny; Smirnov, Artem; Fisch, Nathaniel J.

2007-01-01

Recent mission studies have shown that a Hall thruster which operates at relatively constant thrust efficiency (45-55%) over a broad power range (300W - 3kW) is enabling for deep space science missions when compared with slate-of-the-art ion thrusters. While conventional (annular) Hall thrusters can operate at high thrust efficiency at kW power levels, it is difficult to construct one that operates over a broad power envelope down to 0 (100 W) while maintaining relatively high efficiency. In this note we report the measured performance (I(sub sp), thrust and efficiency) of a cylindrical Hall thruster operating at 0 (100 W) input power.

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Liu, W.; Butté, R.; Dussaigne, A.; Grandjean, N.; Deveaud, B.; Jacopin, G.

2016-11-01

We study the carrier-density-dependent recombination dynamics in m -plane InGaN/GaN multiple quantum wells in the presence of n -type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bimolecular recombination coefficients. Contrary to the standard electron-hole picture, our results confirm the strong influence of excitons even at room temperature. Indeed, at 300 K, excitons represent up to 63 ± 6% of the photoexcited carriers. In addition, following the Shockley-Read-Hall model, we extract the electron and hole capture rates by deep levels and demonstrate that the increase in the effective lifetime with injected carrier density is due to asymmetric capture rates in presence of an n -type background doping. Thanks to the proper determination of the density-dependent recombination coefficients up to high injection densities, our method provides a way to evaluate the importance of Auger recombination.

Cylindrical geometry hall thruster

DOEpatents

Raitses, Yevgeny; Fisch, Nathaniel J.

2002-01-01

An apparatus and method for thrusting plasma, utilizing a Hall thruster with a cylindrical geometry, wherein ions are accelerated in substantially the axial direction. The apparatus is suitable for operation at low power. It employs small size thruster components, including a ceramic channel, with the center pole piece of the conventional annular design thruster eliminated or greatly reduced. Efficient operation is accomplished through magnetic fields with a substantial radial component. The propellant gas is ionized at an optimal location in the thruster. A further improvement is accomplished by segmented electrodes, which produce localized voltage drops within the thruster at optimally prescribed locations. The apparatus differs from a conventional Hall thruster, which has an annular geometry, not well suited to scaling to small size, because the small size for an annular design has a great deal of surface area relative to the volume.

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

PubMed Central

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-01-01

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

PubMed

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-10-27

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

Estimation of Phonon and Carrier Thermal Conductivities for Bulk Thermoelectric Materials Using Transport Properties

NASA Astrophysics Data System (ADS)

Otsuka, Mioko; Homma, Ryoei; Hasegawa, Yasuhiro

2017-05-01

The phonon and carrier thermal conductivities of thermoelectric materials were calculated using the Wiedemann-Franz law, Boltzmann equation, and a method we propose in this study called the Debye specific heat method. We prepared polycrystalline n-type doped bismuth telluride (BiTe) and bismuth antimony (BiSb) bulk alloy samples and measured six parameters (Seebeck coefficient, resistivity, thermal conductivity, thermal diffusivity, magneto-resistivity, and Hall coefficient). The carrier density and mobility were estimated for calculating the carrier thermal conductivity by using the Boltzmann equation. In the Debye specific heat method, the phonon thermal diffusivity, and thermal conductivity were calculated from the temperature dependence of the effective specific heat by using not only the measured thermal conductivity and Debye model, but also the measured thermal diffusivity. The carrier thermal conductivity was also evaluated from the phonon thermal conductivity by using the specific heat. The ratio of carrier thermal conductivity to thermal conductivity was evaluated for the BiTe and BiSb samples, and the values obtained using the Debye specific heat method at 300 K were 52% for BiTe and <5.5% for BiSb. These values are either considerably larger or smaller than those obtained using other methods. The Dulong-Petit law was applied to validate the Debye specific heat method at 300 K, which is significantly greater than the Debye temperature of the BiTe and BiSb samples, and it was confirmed that the phonon specific heat at 300 K has been accurately reproduced using our proposed method.

Proton Knock-Out in Hall A

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kees de Jager

Proton knock-out is studied in a broad program in Hall A at Jefferson Lab. The first experiment performed in Hall A studied the {sup 16}O(e,e'p) reaction. Since then proton knock-out experiments have studied a variety of aspects of that reaction, from single-nucleon properties to its mechanism, such as final-state interactions and two-body currents, in nuclei from {sup 2}H to {sup 16}O. In this review the results of this program will be summarized and an outlook given of future accomplishments.

Astronaut Hall of Fame Induction Ceremony

NASA Image and Video Library

2017-05-19

In a ceremony set beneath Space Shuttle Atlantis, veteran astronauts C. Michael Foale and Ellen Ochoa are inducted into the U.S. Astronaut Hall of Fame. Foale and Ochoa make up the 16th group of space shuttle astronauts to be inducted into the Hall of Fame, and their addition to the group brings the total number of inductees to 95. More than 20 legendary astronauts were on hand to welcome the inductees, including: Robert Cabana, Dan Brandenstein, Al Worden, Charlie Duke, Charles Bolden, Michael Coats, Robert Crippen, Rhea Seddon, and Fred Gregory.

Outcomes of a Technology-Based Social Norms Intervention to Deter Alcohol Use in Freshman Residence Halls

ERIC Educational Resources Information Center

Thombs, Dennis L.; Olds, R. Scott; Osborn, Cynthia J.; Casseday, Sarah; Glavin, Kevin; Berkowitz, Alan D.

2007-01-01

Objective: The authors tested a prototype intervention designed to deter alcohol use in residence halls. Participants: Approximately 384 freshmen participated in the study over a 2-year period. Methods: The authors devised a feedback method that assessed residents' blood alcohol concentration (BAC) at night and allowed the readings to be retrieved…

Hall Sweet Home

ERIC Educational Resources Information Center

Oguntoyinbo, Lekan

2011-01-01

Many urban and commuter universities have their sights set on students who are unlikely to connect with the college and likely to fail unless the right strategies are put in place to help them graduate. In efforts to improve retention rates, commuter colleges are looking to an unusual suspect: residence halls. The author discusses how these…

Hall Effect Spintronics

DTIC Science & Technology

2014-01-01

ferromagnetic films with perpendicular anisotropy were examined, and finally, the magnetoresistance and Hall effect in Manganese- doped Germanium was...interest in ferromagnetic semiconductors. Germanium doped with Mn is particularly interesting Distribution A: Approved for public release...unavoidable, and doped films are strongly inhomogeneous with GexMny, metallic precipitates coexisting with Mn-rich regions and Mn dilute matrix

G. Stanley Hall, Child Study, and the American Public.

PubMed

Young, Jacy L

2016-01-01

In the final decades of the 19th century psychologist Granville Stanley Hall was among the most prominent pedagogical experts in the nation. The author explores Hall's carefully crafted persona as an educational expert, and his engagements with the American public, from 1880 to 1900, arguably the height of his influence. Drawing from accounts of Hall's lecture circuit in the popular press, a map of his talks across the nation is constructed to assess the geographic scope of his influence. These talks to educators on the psychology underlying childhood and pedagogy, and his views and research on child life more generally, were regularly discussed in newspapers and popular periodicals. The venues in which Hall's ideas were disseminated, discussed, and in some cases, dismissed are described. His efforts to mobilize popular support for, and assistance with, his research endeavors in child study are also discussed. Such efforts were controversial both within the burgeoning field of psychology and among the public. Through his various involvements in pedagogy, and concerted efforts to engage with the American public, Hall helped establish psychology's relevance to parenting and educational practices.

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

PubMed Central

Maryenko, D.; Mishchenko, A. S.; Bahramy, M. S.; Ernst, A.; Falson, J.; Kozuka, Y.; Tsukazaki, A.; Nagaosa, N.; Kawasaki, M.

2017-01-01

Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system. PMID:28300133

Generalized plasma skimming model for cells and drug carriers in the microvasculature.

PubMed

Lee, Tae-Rin; Yoo, Sung Sic; Yang, Jiho

2017-04-01

In microvascular transport, where both blood and drug carriers are involved, plasma skimming has a key role on changing hematocrit level and drug carrier concentration in capillary beds after continuous vessel bifurcation in the microvasculature. While there have been numerous studies on modeling the plasma skimming of blood, previous works lacked in consideration of its interaction with drug carriers. In this paper, a generalized plasma skimming model is suggested to predict the redistributions of both the cells and drug carriers at each bifurcation. In order to examine its applicability, this new model was applied on a single bifurcation system to predict the redistribution of red blood cells and drug carriers. Furthermore, this model was tested at microvascular network level under different plasma skimming conditions for predicting the concentration of drug carriers. Based on these results, the applicability of this generalized plasma skimming model is fully discussed and future works along with the model's limitations are summarized.

Nonlinear excitation of long-wavelength modes in Hall plasmas

NASA Astrophysics Data System (ADS)

Lakhin, V. P.; Ilgisonis, V. I.; Smolyakov, A. I.; Sorokina, E. A.

2016-10-01

Hall plasmas with magnetized electrons and unmagnetized ions exhibit a wide range of small scale fluctuations in the lower-hybrid frequency range as well as low-frequency large scale modes. Modulational instability of lower-hybrid frequency modes is investigated in this work for typical conditions in Hall plasma devices such as magnetrons and Hall thrusters. In these conditions, the dispersion of the waves in the lower-hybrid frequency range propagating perpendicular to the external magnetic field is due to the gradients of the magnetic field and the plasma density. It is shown that such lower-hybrid modes are unstable with respect to the secondary instability of the large scale quasimode perturbations. It is suggested that the large scale slow coherent modes observed in a number of Hall plasma devices may be explained as a result of such secondary instabilities.

Performance Characteristics of a 5 kW Laboratory Hall Thruster

DTIC Science & Technology

1996-07-01

Characteristics of a 5 kW Laboratory Hall Thruster James M. Haas’, Frank S. Gulczinski III%, and Alec D. Gallimoret Plasmadynamics and Electric Propulsion...the information learned from the study of this thruster applicable to the understanding of its commercial counterparts. INTRODUCTION Hall thrusters are...few in number at this time; and those that do exist are intended primarily Current generation Hall thruster research has for flight qualification

Performance Potential of Plasma Thrusters: Arcjet and Hall Thruster Modeling

DTIC Science & Technology

1993-09-17

FUNDING NUMBERS Performance Potential of Plasma Thrusters: \\ Arcjet and Hall Thruster Modeling FQ 8671-9300908 S ,,G-AFOSR-91-0256 6. AUTHOR(S) Manuel...models for the internal physics and the performance of hydrogen arcjets and Hall thrusters , respectively. These are thought to represent the state of...work. 93-24268 14. SUBJECT TERMS IS. NUMBER OF PAGES Electric Propulsion, Arcjets, Hall Thrusters 15 16. PRICE COOE 17. SECURITY CLASSIFICATION I18

Spin Hall Effect in Doped Semiconductor Structures

NASA Astrophysics Data System (ADS)

Tse, Wang-Kong; Das Sarma, S.

2006-02-01

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

Spin Hall Effect in Doped Semiconductor Structures

NASA Astrophysics Data System (ADS)

Tse, Wang-Kong; Das Sarma, Sankar

2006-03-01

We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

Effects of high optical injection levels in polycrystalline Si wafers on carrier transport

NASA Astrophysics Data System (ADS)

Steele, Doneisha; Semichaevsky, Andrey

High levels of carrier injection in polycrystalline Si may arise, for example, in solar cells under concentrated sunlight. Mechanisms for non-radiative carrier recombination include trap-mediated SRH and higher-order processes, e.g., Auger recombination. In this paper we present our experimental results for intensity-dependent carrier lifetimes and conduction currents in polycrystalline Si wafers illuminated with pulses of up to 50 Sun intensity. We also use a computational model for carrier transport that includes both SRH and Auger recombination mechanisms, in order to explain our experiments. The model allows quantifying recombination rate dependence on carrier concentration. Our goal is to relate the recombination rates to Si microstructure and defect densities that are revealed by IR PL images. We acknowledge the NSF support through Grant 1505377.

Unsteady Heat and Mass Transfer of Chemically Reacting Micropolar Fluid in a Porous Channel with Hall and Ion Slip Currents

PubMed Central

2014-01-01

This paper presents an incompressible two-dimensional heat and mass transfer of an electrically conducting micropolar fluid flow in a porous medium between two parallel plates with chemical reaction, Hall and ion slip effects. Let there be periodic injection or suction at the lower and upper plates and the nonuniform temperature and concentration at the plates are varying periodically with time. The flow field equations are reduced to nonlinear ordinary differential equations using similarity transformations and then solved numerically by quasilinearization technique. The profiles of velocity components, microrotation, temperature distribution and concentration are studied for different values of fluid and geometric parameters such as Hartmann number, Hall and ion slip parameters, inverse Darcy parameter, Prandtl number, Schmidt number, and chemical reaction rate and shown in the form of graphs. PMID:27419211

Suppression of compensating native defect formation during semiconductor processing via excess carriers

DOE PAGES

Alberi, Kirstin; Scarpulla, M. A.

2016-06-21

In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are often responsible. Suppressing the concentrations of compensating defects during processing close to thermal equilibrium is difficult because formation enthalpies are lowered as the Fermi level moves towards the majority band edge. Excess carriers, introduced for example by photogeneration, modify the formation enthalpy of semiconductor defects and thus can be harnessed during crystal growth or annealing to suppress defect populations. Herein we develop a rigorous and general model for defect formation in the presence of steady-statemore » excess carrier concentrations by combining the standard quasi-chemical formalism with a detailed-balance description that is applicable for any defect state in the bandgap. Considering the quasi-Fermi levels as chemical potentials, we demonstrate that increasing the minority carrier concentration increases the formation enthalpy for typical compensating centers, thus suppressing their formation. Furthermore, this effect is illustrated for the specific example of GaSb. While our treatment is generalized for excess carrier injection or generation in semiconductors by any means, we provide a set of guidelines for applying the concept in photoassisted physical vapor deposition.« less

Radio Science Measurements with Suppressed Carrier

NASA Technical Reports Server (NTRS)

Asmar, Sami; Divsalar, Dariush; Oudrhiri, Kamal

2013-01-01

Radio Science started when it became apparent with early Solar missions that occultations by planetary atmospheres would affect the quality of radio communications. Since then the atmospheric properties and other aspects of planetary science, solar science, and fundamental physics were studied by scientists. Radio Science data was always extracted from a received pure residual carrier (without data modulation). For some missions, it is very desirable to obtain Radio Science data from a suppressed carrier modulation. In this paper we propose a method to extract Radio Science data when a coded suppressed carrier modulation is used in deep space communications. Type of modulation can be BPSK, QPSK, OQPSK, MPSK or even GMSK. However we concentrate mostly on BPSK modulation. The proposed method for suppressed carrier simply tries to wipe out data that acts as an interference for Radio Science measurements. In order to measure the estimation errors in amplitude and phase of the Radio Science data we use Cramer-Rao bound (CRB). The CRB for the suppressed carrier modulation with non-ideal data wiping is then compared with residual carrier modulation under the same noise condition. The method of derivation of CRB for non-ideal data wiping is an innovative method that presented here. Some numerical results are provided for coded system.

Anomalous Hall Resistance in Bilayer Electron Systems

NASA Astrophysics Data System (ADS)

Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

2007-04-01

Interlayer phase coherence has revealed various novel features in bilayer quantum Hall (QH) systems. It is shown to make the QH resistance vanish instead of developing a Hall plateau in a bilayer counterflow geometry. It also induces another anomalous QH resistance discovered in a drag experiment. These theoretical results explain recent experimental data due to Kellogg et al. [PRL 93 (2004) 036801;PRL 88 (2002) 126804] and Tutuc et al.[PRL 93 (2004) 036802].

Interior detail of dispatch boards in main hall, facing west ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior detail of dispatch boards in main hall, facing west - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

An evaluation of krypton propellant in Hall thrusters

NASA Astrophysics Data System (ADS)

Linnell, Jesse Allen

Due to its high specific impulse and low price, krypton has long sparked interest as an alternate Hall thruster propellant. Unfortunately at the moment, krypton's relatively poor performance precludes it as a legitimate option. This thesis presents a detailed investigation into krypton operation in Hall thrusters. These findings suggest that the performance gap can be decreased to 4% and krypton can finally become a realistic propellant option. Although krypton has demonstrated superior specific impulse, the xenon-krypton absolute efficiency gap ranges between 2 and 15%. A phenomenological performance model indicates that the main contributors to the efficiency gap are propellant utilization and beam divergence. Propellant utilization and beam divergence have relative efficiency deficits of 5 and 8%, respectively. A detailed characterization of internal phenomena is conducted to better understand the xenon-krypton efficiency gap. Krypton's large beam divergence is found to be related to a defocusing equipotential structure and a weaker magnetic field topology. Ionization processes are shown to be linked to the Hall current, the magnetic mirror topology, and the perpendicular gradient of the magnetic field. Several thruster design and operational suggestions are made to optimize krypton efficiency. Krypton performance is optimized for discharge voltages above 500 V and flow rates corresponding to an a greater than 0.015 mg/(mm-s), where alpha is a function of flow rate and discharge channel dimensions (alpha = m˙alphab/Ach). Performance can be further improved by increasing channel length or decreasing channel width for a given flow rate. Also, several magnetic field design suggestions are made to enhance ionization and beam focusing. Several findings are presented that improve the understanding of general Hall thruster physics. Excellent agreement is shown between equipotential lines and magnetic field lines. The trim coil is shown to enhance beam focusing

View of north front and west sides of hall, facing ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of north front and west sides of hall, facing south - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

PubMed Central

Zhang, Tian; Lin, Jia-He; Yu, Yan-Mei; Chen, Xiang-Rong; Liu, Wu-Ming

2015-01-01

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices. PMID:26370771

Mixed-state Hall effect of high-T(c) superconductors

NASA Astrophysics Data System (ADS)

Kang, Byeongwon

In this dissertation, we presented the study on the mixed-state Hall effect of high-Tc superconductors (HTSs). In order to understand the mechanisms of the puzzling phenomena in the mixed-state Hall effect of HTSs, the Hall sign anomaly and scaling behavior, Hall measurements are conducted in several HTS thin films. We investigate the mechanism of the sign reversal of the Hall resistivity in Tl-2201 films when the electronic band structure is varied through the underdoped, optimally doped, and overdoped regions. It is found that the Hall sign reversals are an intrinsic property of HTSs and determined by electronic band structure. Although pinning is not found to be the mechanism behind sign reversals, pinning can suppress the appearance of the Hall sign reversal. Therefore, it is concluded that two (or more) sign reversals are a generic behavior of HTSs. From a systematic study of the vortex phase diagram, we discover several new features of the vortex liquid. In the presence of pinning, the vortex-liquid phase can be divided into two regions, a glassy liquid (GL) where vortices remain correlated as manifested in non-Ohmic resistivity, and a regular liquid (RL) where resistivity becomes Ohmic as vortices become uncorrelated. The field dependence of the Hall angle is found to be linear in the RL and nonlinear in the GL. Generally the decoupling line (Hk- T), which is defined as a boundary between the GL and the RL, is lower than the depinning line (Hd-T). As pinning increases the Hk-T may approach the Hd-T, thus vortices are decoupled and depinned nearly simultaneously. For a weak pinning system, on the other hand, the Hk-T and the Hd-T are well separated so that single vortices remain pinned in the region Hk ≤ H ≥ Hd. The behavior of s xy is also investigated in the GL and the RL. In the GL s xy is observed to strongly depend on pinning due to the inter-vortex correlation whereas in the RL s xy is independent of pinning since the pinning effect is scaled out.

Probing the thermal Hall effect using miniature capacitive strontium titanate thermometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tinsman, Colin; Li, Gang; Asaba, Tomoya

2016-06-27

The thermal Hall effect is the thermal analog of the electrical Hall effect. Rarely observed in normal metals, thermal Hall signals have been argued to be a key property for a number of strongly correlated materials, such as high temperature superconductors, correlated topological insulators, and quantum magnets. The observation of the thermal Hall effect requires precise measurement of temperature in intense magnetic fields. Particularly at low temperature, resistive thermometers have a strong dependence on field, which makes them unsuitable for this purpose. We have created capacitive thermometers which instead measure the dielectric constant of strontium titanate (SrTiO{sub 3}). SrTiO{sub 3}more » approaches a ferroelectric transition, causing its dielectric constant to increase by a few orders of magnitude at low temperature. As a result, these thermometers are very sensitive at low temperature while having very little dependence on the applied magnetic field, making them ideal for thermal Hall measurements. We demonstrate this method by making measurements of the thermal Hall effect in Bismuth in magnetic fields of up to 10 T.« less

Accelerating 3D Hall MHD Magnetosphere Simulations with Graphics Processing Units

NASA Astrophysics Data System (ADS)

Bard, C.; Dorelli, J.

2017-12-01

The resolution required to simulate planetary magnetospheres with Hall magnetohydrodynamics result in program sizes approaching several hundred million grid cells. These would take years to run on a single computational core and require hundreds or thousands of computational cores to complete in a reasonable time. However, this requires access to the largest supercomputers. Graphics processing units (GPUs) provide a viable alternative: one GPU can do the work of roughly 100 cores, bringing Hall MHD simulations of Ganymede within reach of modest GPU clusters ( 8 GPUs). We report our progress in developing a GPU-accelerated, three-dimensional Hall magnetohydrodynamic code and present Hall MHD simulation results for both Ganymede (run on 8 GPUs) and Mercury (56 GPUs). We benchmark our Ganymede simulation with previous results for the Galileo G8 flyby, namely that adding the Hall term to ideal MHD simulations changes the global convection pattern within the magnetosphere. Additionally, we present new results for the G1 flyby as well as initial results from Hall MHD simulations of Mercury and compare them with the corresponding ideal MHD runs.

Magnetic field deformation due to electron drift in a Hall thruster

NASA Astrophysics Data System (ADS)

Liang, Han; Yongjie, Ding; Xu, Zhang; Liqiu, Wei; Daren, Yu

2017-01-01

The strength and shape of the magnetic field are the core factors in the design of the Hall thruster. However, Hall current can affect the distribution of static magnetic field. In this paper, the Particle-In-Cell (PIC) method is used to obtain the distribution of Hall current in the discharge channel. The Hall current is separated into a direct and an alternating part to calculate the induced magnetic field using Finite Element Method Magnetics (FEMM). The results show that the direct Hall current decreases the magnetic field strength in the acceleration region and also changes the shape of the magnetic field. The maximum reduction in radial magnetic field strength in the exit plane is 10.8 G for an anode flow rate of 15 mg/s and the maximum angle change of the magnetic field line is close to 3° in the acceleration region. The alternating Hall current induces an oscillating magnetic field in the whole discharge channel. The actual magnetic deformation is shown to contain these two parts.

Timber Creek bunkhouse and mess hall, Rocky Mountain National Park. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Timber Creek bunkhouse and mess hall, Rocky Mountain National Park. Interior, kitchen and dining area, viewing north. - Timber Creek Bunkhouse & Mess Hall, Trail Ridge Road, Grand Lake, Grand County, CO

Developments in Scanning Hall Probe Microscopy

NASA Astrophysics Data System (ADS)

Chouinard, Taras; Chu, Ricky; David, Nigel; Broun, David

2009-05-01

Low temperature scanning Hall probe microscopy is a sensitive means of imaging magnetic structures with high spatial resolution and magnetic flux sensitivity approaching that of a Superconducting Quantum Interference Device. We have developed a scanning Hall probe microscope with novel features, including highly reliable coarse positioning, in situ optimization of sensor-sample alignment and capacitive transducers for linear, long range positioning measurement. This has been motivated by the need to reposition accurately above fabricated nanostructures such as small superconducting rings. Details of the design and performance will be presented as well as recent progress towards time-resolved measurements with sub nanosecond resolution.

High-performance LED luminaire for sports hall

NASA Astrophysics Data System (ADS)

Lee, Xuan-Hao; Yang, Jin-Tsung; Chien, Wei-Ting; Chang, Jung-Hsuan; Lo, Yi-Chien; Lin, Che-Chu; Sun, Ching-Cherng

2015-09-01

In this paper, we present a luminaire design with anti-glare and energy-saving effects for sports hall. Compared with traditional lamps using in a badminton court, the average illuminance on the ground of the proposed LED luminaire is enhanced about 300%. Besides, the uniformity is obviously enhanced and improved. The switch-on speed of lighting in sports hall is greatly reduced from 5-10 minutes to 1 second. The simulation analysis and the corresponding experiment results are demonstrated.

Kids in the Hall.

ERIC Educational Resources Information Center

Swanquist, Barry

2000-01-01

Discusses resident hall furniture design that meets student needs as well as the needs of administrators and parents. Furniture design issues examined include the higher expectations of students in their living environment, the need for greater flexibility in space utilization, and adaptability to technology. (GR)

What do you measure when you measure the Hall effect?

NASA Astrophysics Data System (ADS)

Koon, D. W.; Knickerbocker, C. J.

1993-02-01

A formalism for calculating the sensitivity of Hall measurements to local inhomogeneities of the sample material or the magnetic field is developed. This Hall weighting function g(x,y) is calculated for various placements of current and voltage probes on square and circular laminar samples. Unlike the resistivity weighting function, it is nonnegative throughout the entire sample, provided all probes lie at the edge of the sample. Singularities arise in the Hall weighting function near the current and voltage probes except in the case where these probes are located at the corners of a square. Implications of the results for cross, clover, and bridge samples, and the implications of our results for metal-insulator transition and quantum Hall studies are discussed.

Detail of main hall porch on east elevation; camera facing ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Detail of main hall porch on east elevation; camera facing west. - Mare Island Naval Shipyard, Wilderman Hall, Johnson Lane, north side adjacent to (south of) Hospital Complex, Vallejo, Solano County, CA

Interior detail of platform in main hall, with desk, flag, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior detail of platform in main hall, with desk, flag, and banners, facing south - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

Correlation of Hall and Shubnikov-de Haas Oscillations and Impurity States in Sn- and I- Doped Single Crystals p-Bi 2 Te 3

NASA Astrophysics Data System (ADS)

Tahar, M. Z.; Popov, D. I.; Nemov, S. A.

2018-03-01

Oscillations of the Hall coefficient and Shubnikov-de Haas (SdH) were observed in p-Bi2Te3 crystals doped with Sn (acceptor) and with I (donor) in magnetic fields up to 9 T parallel to the C3 trigonal axis at low temperatures (2 K < T < 20K), which is an evidence of the spatial homogeneity of carriers in complex solid solutions. This supports the existence of a narrow band of Sn states (partially filled) against the background of the valence band acting as a reservoir with high density of states partially filled with electrons. Previously, in these systems in which the Fermi level was in the light-hole valence band, both large Hall and SdH oscillations were observed, with ∼π phase shift between them, whereas when the Fermi level was in the heavy-hole valence band (larger acceptor content), no quantum oscillations were observed. It was concluded that the observed low amplitude quantum oscillations may be attributed to the shifting of the reservoir from the light-hole band to the heavy-hole, and the observed phase shift in the range 0 - π/2 between Hall and SdH oscillations may be attributed to filling factor of the reservoir with electrons, which varies with I content. Experimental results along with theoretical explanation of these correlations are presented.

Useful Pedagogical Applications of the Classical Hall Effect

ERIC Educational Resources Information Center

Houari, Ahmed

2007-01-01

One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

Nonequilibrium Fractional Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, Nur; Mueller, Erich; Oktel, M. O.

When a system is suddenly driven between two topologically different phases, aspects of the original topology survive the quench, but most physical observables (edge currents, Hall conductivity) appear to be non-universal. I will present the non-equilibrium Hall response of a Chern insulator following a quench where the mass term of a single Dirac cone changes sign. In the limit where the physics is dominated by a single Dirac cone, we theoretically find that the Hall conductivity universally changes by two-thirds of the quantum of conductivity. I will analyze this universal behavior by considering the Haldane model, and discuss experimental aspects for its observation in cold atoms. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

Rule-based fault diagnosis of hall sensors and fault-tolerant control of PMSM

NASA Astrophysics Data System (ADS)

Song, Ziyou; Li, Jianqiu; Ouyang, Minggao; Gu, Jing; Feng, Xuning; Lu, Dongbin

2013-07-01

Hall sensor is widely used for estimating rotor phase of permanent magnet synchronous motor(PMSM). And rotor position is an essential parameter of PMSM control algorithm, hence it is very dangerous if Hall senor faults occur. But there is scarcely any research focusing on fault diagnosis and fault-tolerant control of Hall sensor used in PMSM. From this standpoint, the Hall sensor faults which may occur during the PMSM operating are theoretically analyzed. According to the analysis results, the fault diagnosis algorithm of Hall sensor, which is based on three rules, is proposed to classify the fault phenomena accurately. The rotor phase estimation algorithms, based on one or two Hall sensor(s), are initialized to engender the fault-tolerant control algorithm. The fault diagnosis algorithm can detect 60 Hall fault phenomena in total as well as all detections can be fulfilled in 1/138 rotor rotation period. The fault-tolerant control algorithm can achieve a smooth torque production which means the same control effect as normal control mode (with three Hall sensors). Finally, the PMSM bench test verifies the accuracy and rapidity of fault diagnosis and fault-tolerant control strategies. The fault diagnosis algorithm can detect all Hall sensor faults promptly and fault-tolerant control algorithm allows the PMSM to face failure conditions of one or two Hall sensor(s). In addition, the transitions between health-control and fault-tolerant control conditions are smooth without any additional noise and harshness. Proposed algorithms can deal with the Hall sensor faults of PMSM in real applications, and can be provided to realize the fault diagnosis and fault-tolerant control of PMSM.

Interior of Mess Hall, showing original columns and quarry tile ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior of Mess Hall, showing original columns and quarry tile floor - U.S. Naval Base, Pearl Harbor, Barracks & Mess Hall, Hornet Avenue between Liscome Bay & Enterprise Streets, Pearl City, Honolulu County, HI

Contextual view of ILWU Hall, facing northwest with commercial port ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Contextual view of ILWU Hall, facing northwest with commercial port buildings visible in the background - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

Contextual view of ILWU Hall, facing southsouthwest, with ocean bank ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Contextual view of ILWU Hall, facing south-southwest, with ocean bank visible in the background - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

Nonlinear dynamics induced anomalous Hall effect in topological insulators

PubMed Central

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-01

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

Nonlinear dynamics induced anomalous Hall effect in topological insulators.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-28

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

DOE PAGES

Aytac, Y.; Olson, B. V.; Kim, J. K.; ...

2016-06-01

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aytac, Y.; Olson, B. V.; Kim, J. K.

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2016-01-01

NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This presentation will cover the electrical configuration testing of the TDU-1 HERMeS Hall thruster in NASA Glenn Research Centers Vacuum Facility 5. The three electrical configurations examined are the thruster body tied to facility ground, thruster floating, and finally the thruster body electrically tied to cathode common. The TDU-1 HERMeS was configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Inverse spin Hall effect by spin injection

NASA Astrophysics Data System (ADS)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Contextual view of ILWU Hall, facing east, with the city ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Contextual view of ILWU Hall, facing east, with the city of Port Hueneme visible in the background - International Longshoremen's & Warehousemen's Union Hall, Naval Civil Engineering Laboratory, Port Hueneme Road, Port Hueneme, Ventura County, CA

G. Stanley Hall and The Journal of Genetic Psychology: A Note.

PubMed

Hogan, John D

2016-01-01

The Journal of Genetic Psychology (originally called The Pedagogical Seminary) has a complicated history. Known primarily as a journal of development psychology, it was originally intended to be a journal of higher education. In addition, G. Stanley Hall created it, at least in part, to curry favor with Jonas Clark, the benefactor of Clark University. The journal had a cumbersome start, with irregular issues for most of its first decade. Hall was a hands-on editor, often contributing articles and reviews as well as the texts of many of his speeches. A substantial number of additional articles were written by Clark University faculty and fellows where Hall was president. After Hall.s death, the editor became Carl Murchison who eventually left Clark University with the journal and continued to publish it privately until his death. Through the years, the journal has been the source for many classic articles in developmental psychology.

Very-Near-Field Plume Model of a Hall Thruster

DTIC Science & Technology

2003-07-20

UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP014988 TITLE: Very-Near-Field Plume Model of a Hall Thruster DISTRIBUTION...numbers comprise the compilation report: ADP014936 thru ADP015049 UNCLASSIFIED am 46 Very-Near-Field Plume Model of a Hall Thruster F. Taccogna’, S. LongoŖ

High Life: 17th Annual Residence Hall Construction Report

ERIC Educational Resources Information Center

Agron, Joe

2006-01-01

Residence hall construction continues to be a priority for colleges and universities. With enrollments on the upswing, higher-education institutions are spending more and building larger facilities to entice students to live on campus. This article presents the findings of "American School & University's" 17th annual Residence Hall Construction…

Tunable-φ Josephson junction with a quantum anomalous Hall insulator

NASA Astrophysics Data System (ADS)

Sakurai, Keimei; Ikegaya, Satoshi; Asano, Yasuhiro

2017-12-01

We theoretically study the Josephson current in a superconductor/quantum anomalous Hall insulator/superconductor junction by using the lattice Green function technique. When an in-plane external Zeeman field is applied to the quantum anomalous Hall insulator, the Josephson current J flows without a phase difference across the junction θ . The phase shift φ appearing in the current-phase relationship J ∝sin(θ -φ ) is proportional to the amplitude of Zeeman fields and depends on the direction of Zeeman fields. A phenomenological analysis of the Andreev reflection processes explains the physical origin of φ . In a quantum anomalous Hall insulator, time-reversal symmetry and mirror-reflection symmetry are broken simultaneously. However, magnetic mirror-reflection symmetry is preserved. Such characteristic symmetry properties enable us to have a tunable φ junction with a quantum Hall insulator.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Hall-effect Thruster Channel Surface Properties Investigation (PREPRINT)

DTIC Science & Technology

2011-03-03

Article 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Hall-effect Thruster Channel Surface Properties Investigation 5b...13. SUPPLEMENTARY NOTES For publication in the AIAA Journal of Propulsion and Power. 14. ABSTRACT Surface properties of Hall-effect thruster...incorporated into thruster simulations, and these models must account for evolution of channel surface properties due to thruster operation. Results from

The Hall Effect in Hydrided Rare Earth Films

NASA Astrophysics Data System (ADS)

Koon, D. W.; Azofeifa, D. E.; Clark, N.

We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

71. FIRST FLOOR, ROOM 101, ENTRANCE HALL (SIDE WITH FIRE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

71. FIRST FLOOR, ROOM 101, ENTRANCE HALL (SIDE WITH FIRE DETECTOR), ARCHWAY TO STAIR HALL 100, LOOKING UP, DETAIL OF ARCHWAY SOFFIT. - Octagon House, 1799 (1741) New York Avenue, Northwest, Washington, District of Columbia, DC

Electron Transport in Hall Thrusters

NASA Astrophysics Data System (ADS)

McDonald, Michael Sean

Despite high technological maturity and a long flight heritage, computer models of Hall thrusters remain dependent on empirical inputs and a large part of thruster development to date has been heavily experimental in nature. This empirical approach will become increasingly unsustainable as new high-power thrusters tax existing ground test facilities and more exotic thruster designs stretch and strain the boundaries of existing design experience. The fundamental obstacle preventing predictive modeling of Hall thruster plasma properties and channel erosion is the lack of a first-principles description of electron transport across the strong magnetic fields between the cathode and anode. In spite of an abundance of proposed transport mechanisms, accurate assessments of the magnitude of electron current due to any one mechanism are scarce, and comparative studies of their relative influence on a single thruster platform simply do not exist. Lacking a clear idea of what mechanism(s) are primarily responsible for transport, it is understandably difficult for the electric propulsion scientist to focus his or her theoretical and computational tools on the right targets. This work presents a primarily experimental investigation of collisional and turbulent Hall thruster electron transport mechanisms. High-speed imaging of the thruster discharge channel at tens of thousands of frames per second reveals omnipresent rotating regions of elevated light emission, identified with a rotating spoke instability. This turbulent instability has been shown through construction of an azimuthally segmented anode to drive significant cross-field electron current in the discharge channel, and suggestive evidence points to its spatial extent into the thruster near-field plume as well. Electron trajectory simulations in experimentally measured thruster electromagnetic fields indicate that binary collisional transport mechanisms are not significant in the thruster plume, and experiments

Correlating optical infrared and electronic properties of low tellurium doped GaSb bulk crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roodenko, K., E-mail: kroodenko@intelliepi.com; Liao, P.-K.; Lan, D.

2016-04-07

Control over the Te doping concentration is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb crystals. Driven by the necessity to perform fast, robust, and non-destructive quality control of the Te doping homogeneity of the optically transparent large-diameter GaSb wafers, we correlated electronic and optical infrared properties of Te-doped GaSb crystals. The study was based on the experimental Hall and Fourier-Transform Infrared (FTIR) data collected from over 50 samples of the low-doped n-type material (carrier concentration of 6 × 10{sup 16} cm{sup −3} to 7 × 10{sup 17} cm{sup −3}) and the Te-doped p-type GaSb (4.6 ×more » 10{sup 15} cm{sup −3} to 1 × 10{sup 16} cm{sup −3}). For the n-type GaSb, the analysis of the FTIR data was performed using free carrier absorption model, while for the p-type material, the absorption was modeled using inter-valence band absorption mechanism. Using the correlation between the Hall and the IR data, FTIR maps across the wafers allow a fast and reliable way to estimate carrier concentration profile within the wafer.« less

Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector

NASA Astrophysics Data System (ADS)

Mao, Yifei; Zhang, Jijun; Lin, Liwen; Lai, Jianming; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun

2018-04-01

Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) of CdZnTe achieved 10-2 cm2 V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1 × 10-4 cm2 V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([VCd]2-) was found to be the main factor that assist IR light affecting the μτ of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [VCd]2- defect on the carrier transport property of CdZnTe detector under IR illumination.

Universal DC Hall conductivity of Jain's state ν = N/2N +/- 1

NASA Astrophysics Data System (ADS)

Nguyen, Dung; Son, Dam

We present the Fermi-liquid theory of the fractional quantum Hall effect to describe Jain's states with filling fraction ν =N/2 N +/- 1 , that are near half filling. We derive the DC Hall conductivity σH (t) in closed form within the validity of our model. The results show that, without long range interaction, DC Hall conductivity has the universal form which doesn't depend on the detail of short range Landau's parameters Fn. When long range interaction is included, DC Hall conductivity depends on both long range interaction and Landau's parameters. We also analyze the relation between DC Hall conductivity and static structure factor. This work was supported by the Chicago MRSEC, which is funded by NSF through Grant DMR-1420709.

Kelvin-Helmholtz versus Hall magnetoshear instability in astrophysical flows.

PubMed

Gómez, Daniel O; Bejarano, Cecilia; Mininni, Pablo D

2014-05-01

We study the stability of shear flows in a fully ionized plasma. Kelvin-Helmholtz is a well-known macroscopic and ideal shear-driven instability. In sufficiently low-density plasmas, also the microscopic Hall magnetoshear instability can take place. We performed three-dimensional simulations of the Hall-magnetohydrodynamic equations where these two instabilities are present, and carried out a comparative study. We find that when the shear flow is so intense that its vorticity surpasses the ion-cyclotron frequency of the plasma, the Hall magnetoshear instability is not only non-negligible, but it actually displays growth rates larger than those of the Kelvin-Helmholtz instability.

68. TURBINE HALL, LOOKING DOWN FROM THE CONTROL ROOM INTO ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

68. TURBINE HALL, LOOKING DOWN FROM THE CONTROL ROOM INTO TURBINE HALL AT UNITS 3, 5, AND 2) - Delaware County Electric Company, Chester Station, Delaware River at South end of Ward Street, Chester, Delaware County, PA

Residence Hall Discipline as a Function of Personality Type.

ERIC Educational Resources Information Center

Williams, W. C.; Nelson, Susan Innmon

1986-01-01

Administered personality measures to residence hall personnel (N=48) to test assertive, nonassertive, or hostile responses to describe residence hall disciplinary situations. Found that not all personnel were well suited to college student disciplining and that the personality tests could be used to identify individuals who may be best suited for…

Implementing Proactive Network Management Solutions in the Residence Halls

ERIC Educational Resources Information Center

Bedi, Param

2005-01-01

This paper discusses how to implement networking solutions in residence halls at Arcadia University in Philadelphia. Sections of the paper include: (1) About Arcadia University; (2) Residence Halls Network; (3) How Campus Manager Helped Arcadia University; (4) What Is Campus Manager; (5) How Campus Manager Works; (6) Campus Manager Remediation…

An End-to-End Model of a Hall Thruster

DTIC Science & Technology

2000-09-01

and deposition of sputtered material, simulation of the operator of a Hall Thruster in a vacuum tank and the extension to the near-plume of a...sophisticated Hall thruster transient hybrid PlC model which had been previously used only to describe the internal flow. The first two items have been

The ``cinquefoil" resistive/Hall measurement geometry

NASA Astrophysics Data System (ADS)

Koon, Daniel W.

2000-03-01

This talk begins by analyzing the charge transport weighting functions -- the sensitivity of resistive and Hall measurements to local macroscopic inhomogeneities -- of bridge-shaped transport specimens. As expected, such measurements sample only that region of the specimen between the central voltage electrodes, in the limit of narrow current channels connected by even narrower arms to the voltage electrodes. The bridge geometry has a few advantages over the van der Pauw cloverleaf geometry -- including ease in zeroing out the null-field Hall voltage -- but also some disadvantages. The talk concludes with an analysis of a hybrid geometry, the “cinquefoil” or five-leafed clover, which combines the best features of both.

High Performance Power Module for Hall Effect Thrusters

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

2002-01-01

Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madni, I.; Umana-Membreno, G. A.; Lei, W.

2015-11-02

The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{supmore » −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.« less

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Interior view, groundfloor dining hall extending across the rotunda extension ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior view, ground-floor dining hall extending across the rotunda extension from it's northern exterior wall to its southern exterior wall, from the north. - U. S. Naval Asylum, Biddle Hall, Gray's Ferry Avenue, Philadelphia, Philadelphia County, PA

Suitable reverberation times for halls for rock and pop music.

PubMed

Adelman-Larsen, Niels Werner; Thompson, Eric R; Gade, Anders C

2010-01-01

The existing body of literature regarding the acoustic design of concert halls has focused almost exclusively on classical music, although there are many more performances of popular music, including rock and pop. Objective measurements were made of the acoustics of 20 rock music venues in Denmark and a questionnaire was used in a subjective assessment of those venues with professional rock musicians and sound engineers as expert listeners. Correlations between the measurements show that clarity, including bass frequencies down to 63 Hz, is important for the general impression of the acoustics of the hall. The best-rated halls in the study have reverberation times that are approximately frequency independent from 0.6 to 1.2 s for hall volumes from 1000 to 6000 m(3). The worst rated halls in the study had significantly higher reverberation times in the 63 and 125 Hz bands. Since most audiences at rock concerts are standing, absorption coefficients were measured with a standing audience from 63 Hz to 4 kHz. These measurements showed that a standing audience absorbs about five times as much energy in mid-/high-frequency bands as in low-frequency bands.

Coupling intensity between discharge and magnetic circuit in Hall thrusters

NASA Astrophysics Data System (ADS)

Wei, Liqiu; Yang, Xinyong; Ding, Yongjie; Yu, Daren; Zhang, Chaohai

2017-03-01

Coupling oscillation is a newly discovered plasma oscillation mode that utilizes the coupling between the discharge circuit and magnetic circuit, whose oscillation frequency spectrum ranges from several kilohertz to megahertz. The coupling coefficient parameter represents the intensity of coupling between the discharge and magnetic circuits. According to previous studies, the coupling coefficient is related to the material and the cross-sectional area of the magnetic coils, and the magnetic circuit of the Hall thruster. However, in our recent study on coupling oscillations, it was found that the Hall current equivalent position and radius have important effects on the coupling intensity between the discharge and magnetic circuits. This causes a difference in the coupling coefficient for different operating conditions of Hall thrusters. Through non-intrusive methods for measuring the Hall current equivalent radius and the axial position, it is found that with an increase in the discharge voltage and magnetic field intensity, the Hall current equivalent radius increases and its axial position moves towards the exit plane. Thus, both the coupling coefficient and the coupling intensity between the discharge and magnetic circuits increase. Contribution to the Topical Issue "Physics of Ion Beam Sources", edited by Holger Kersten and Horst Neumann.

Measuring the Hall weighting function for square and cloverleaf geometries

NASA Astrophysics Data System (ADS)

Scherschligt, Julia K.; Koon, Daniel W.

2000-02-01

We have directly measured the Hall weighting function—the sensitivity of a four-wire Hall measurement to the position of macroscopic inhomogeneities in Hall angle—for both a square shaped and a cloverleaf specimen. Comparison with the measured resistivity weighting function for a square geometry [D. W. Koon and W. K. Chan, Rev. Sci. Instrum. 69, 12 (1998)] proves that the two measurements sample the same specimen differently. For Hall measurements on both a square and a cloverleaf, the function is nonnegative with its maximum in the center and its minimum of zero at the edges of the square. Converting a square into a cloverleaf is shown to dramatically focus the measurement process onto a much smaller portion of the specimen. While our results agree qualitatively with theory, details are washed out, owing to the finite size of the magnetic probe used.

Low-Cost, High-Performance Hall Thruster Support System

NASA Technical Reports Server (NTRS)

Hesterman, Bryce

2015-01-01

Colorado Power Electronics (CPE) has built an innovative modular PPU for Hall thrusters, including discharge, magnet, heater and keeper supplies, and an interface module. This high-performance PPU offers resonant circuit topologies, magnetics design, modularity, and a stable and sustained operation during severe Hall effect thruster current oscillations. Laboratory testing has demonstrated discharge module efficiency of 96 percent, which is considerably higher than current state of the art.

The Hall-induced stability of gravitating fluids

NASA Astrophysics Data System (ADS)

Karmakar, P. K.; Goutam, H. P.

2018-05-01

We analyze the stability behavior of low-density partially ionized self-gravitating magnetized unbounded dusty plasma fluid in the presence of the Hall diffusion effects (HDEs) in the non-ideal magnetohydrodynamic (MHD) equilibrium framework. The effects of inhomogeneous self-gravity are methodically included in the basic model tapestry. Application of the Fourier plane-wave perturbative treatment decouples the structuration representative parameters into a linear generalized dispersion relation (sextic) in a judicious mean-fluid approximation. The dispersion analysis shows that the normal mode, termed as the gravito-magneto-acoustic (GMA) mode, is drastically modified due to the HDEs. This mode is highly dispersive, and driven unstable by the Hall current resulting from the symmetry-breaking of electrons and ions relative to the magnetic field. The mode feature, which is derived from a modified induction with the positive Hall, is against the ideal MHD. It is further demonstrated that the HDEs play stabilizing roles by supporting the cloud against gravitational collapse. Provided that the HDEs are concurrently switched off, the collapse occurs on the global spatial scale due to enhanced inward accretion of the gravitating dust constituents. It is seen explicitly that the enhanced dust-charge leads to stabilizing effects. Besides, the Hall-induced fluctuations, as propagatory wave modes, exhibit both normal and anomalous dispersions. The reliability checkup of the entailed results as diverse corollaries and special cases are illustratively discussed in the panoptic light of the earlier paradigmatic predictions available in the literature.

A Small Modular Laboratory Hall Effect Thruster

NASA Astrophysics Data System (ADS)

Lee, Ty Davis

Electric propulsion technologies promise to revolutionize access to space, opening the door for mission concepts unfeasible by traditional propulsion methods alone. The Hall effect thruster is a relatively high thrust, moderate specific impulse electric propulsion device that belongs to the class of electrostatic thrusters. Hall effect thrusters benefit from an extensive flight history, and offer significant performance and cost advantages when compared to other forms of electric propulsion. Ongoing research on these devices includes the investigation of mechanisms that tend to decrease overall thruster efficiency, as well as the development of new techniques to extend operational lifetimes. This thesis is primarily concerned with the design and construction of a Small Modular Laboratory Hall Effect Thruster (SMLHET), and its operation on argon propellant gas. Particular attention was addressed at low-cost, modular design principles, that would facilitate simple replacement and modification of key thruster parts such as the magnetic circuit and discharge channel. This capability is intended to facilitate future studies of device physics such as anomalous electron transport and magnetic shielding of the channel walls, that have an impact on thruster performance and life. Preliminary results demonstrate SMLHET running on argon in a manner characteristic of Hall effect thrusters, additionally a power balance method was utilized to estimate thruster performance. It is expected that future thruster studies utilizing heavier though more expensive gases like xenon or krypton, will observe increased efficiency and stability.

Throttling Impacts on Hall Thruster Performance, Erosion, and Qualification for NASA Science Missions

NASA Technical Reports Server (NTRS)

Dankanich, John W.; DeHoyos, Amado

2007-01-01

With the SMART-1, Department of Defense, and commercial industry successes in Hall thruster technologies, NASA has started considering Hall thrusters for science missions. The recent Discovery proposals included a Hall thruster science mission and the In-Space Propulsion Project is investing in Hall thruster technologies. As the confidence in Hall thrusters improve, ambitious multi-thruster missions are being considered. Science missions often require large throttling ranges due to the 1/r(sup 2) power drop-off from the sun. Deep throttling of Hall thrusters will impact the overall system performance. Also, Hall thrusters can be throttled with both current and voltage, impacting erosion rates and performance. Last, electric propulsion thruster lifetime qualification has previously been conducted with long duration full power tests. Full power tests may not be appropriate for NASA science missions, and a combination of lifetime testing at various power levels with sufficient analysis is recommended. Analyses of various science missions and throttling schemes using the Aerojet BPT-4000 and NASA 103M HiVHAC thruster are presented.

Plasma oscillation effects on nested Hall thruster operation and stability

NASA Astrophysics Data System (ADS)

McDonald, M. S.; Sekerak, M. J.; Gallimore, A. D.; Hofer, R. R.

High-power Hall thrusters capable of throughput on the order of 100 kW are currently under development, driven by more demanding mission profiles and rapid growth in on-orbit solar power generation capability. At these power levels the nested Hall thruster (NHT), a new design that concentrically packs multiple thrusters into a single body with a shared magnetic circuit, offers performance and logistical advantages over conventional single-channel Hall thrusters. An important area for risk reduction in NHT development is quantifying inter-channel coupling between discharge channels. This work presents time- and frequency-domain discharge current and voltage measurements paired with high-speed video of the X2, a 10-kW class dual channel NHT. Two “ triads” of operating conditions at 150 V, 3.6 kW and 250 V, 8.6 kW were examined, including each channel in individual operation and both channels in joint operation. For both triads tested, dual-channel operation did not noticeably destabilize the discharge. Partial coupling of outer channel oscillations into the inner channel occurred at 150 V, though oscillation amplitudes did not change greatly. As a percentage of mean discharge current, RMS oscillations at 150 V increased from 8% to 13% on the inner channel and decreased from 10% to 8% on the outer channel from single- to dual-channel operation. At 250 V the RMS/mean level stayed steady at 13% on the inner channel and decreased from 7% to 6% on the outer channel. The only mean discharge parameter noticeably affected was the cathode floating potential, which decreased in magnitude below ground with increased absolute cathode flow rate in dual-channel mode. Rotating spokes were detected on high-speed video across all X2 operating cases with wavelength 12-18 cm, and spoke velocity generally increased from single- to dual-channel operation.

Intensity- and temperature- dependent carrier recombination in InAs/In(As 1-xSb x) type-II superlattices

DOE PAGES

Olson, Benjamin Varberg; Kadlec, Emil Andrew; Kim, Jin K.; ...

2015-04-17

Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs 0.66Sb 0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limitsmore » the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg 1-xCd xTe dark current, indicating that the T2SL can have a lower dark current with mitigation of the SRH defect states. Our results illustrate the potential for InAs/InAs 1-xSb x T2SLs as absorbers in infrared photodetectors.« less

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

12. BUILDING 324, INTERIOR, ENTRY HALL AND STAIRWAY, FROM SOUTH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

12. BUILDING 324, INTERIOR, ENTRY HALL AND STAIRWAY, FROM SOUTH ENTRY, LOOKING NORTH, WITH HALL LEADING TO GARAGE TO RIGHT OF STAIRWAY. - Oakland Naval Supply Center, Commanding Officers Residences, Between E & F Streets, West of Fourth Street, Oakland, Alameda County, CA

24. BEDROOM #1 INTERIOR SHOWING OPEN DOOR TO HALL WITH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

24. BEDROOM #1 INTERIOR SHOWING OPEN DOOR TO HALL WITH HALL LINEN CLOSETS VISIBLE IN BACKGROUND, AND PARTIALLY OPEN DOOR TO CLOSET. VIEW TO EAST. - Big Creek Hydroelectric System, Powerhouse 8, Operator Cottage, Big Creek, Big Creek, Fresno County, CA

Mary E. Hall: Dawn of the Professional School Librarian

ERIC Educational Resources Information Center

Alto, Teresa

2012-01-01

A century ago, a woman named Mary E. Hall convinced school leaders of the need for the professional school librarian--a librarian who cultivated a love of reading, academic achievement, and independent learning skills. After graduating from New York City's Pratt Institute Library School in 1895, Hall developed her vision for the high school…

Hall Thruster With an External Acceleration Zone

DTIC Science & Technology

2005-09-14

Hall Thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and cross-field (along the electron Hall current direction) velocities were measured. The results presented here, combined with those of previous work, highlight the high sensitivity of electron mobility inside and outside the channel, depending on the background gas density, type of wall

First Firing of a 100-kW Nested-Channel Hall Thruster

DTIC Science & Technology

2013-09-01

Technical Paper 3. DATES COVERED (From - To) September 2013- December 2013 4. TITLE AND SUBTITLE First Firing of a 100-kW Nested-Channel Hall Thruster 5a...STATEMENT A: Approved for public release; distribution unlimited. 1 First Firing of a 100-kW Nested-channel Hall Thruster IEPC-2013-394...converting electrical power to directed kinetic power I. Introduction ESTING the channels of Hall thrusters has proven to be a viable method to increase

Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

2012-10-01

The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

Judy Estes Hall (1940-2015).

PubMed

Sammons, Morgan T; Boucher, Andrew

2016-01-01

Presents an obituary for Judy Estes Hall, who passed away on November 24, 2015. Hall served as the Executive Officer of the National Register of Health Service Psychologists until her retirement in 2013. She is a recognized expert in the development of education and training standards for the profession of psychology, she also made significant contributions in the field of international psychology, where she was a renowned expert in cross-national credentialing and an advocate for commonality in licensing standards. She was the coauthor of one edited volume and author of more than 60 journal articles, book chapters, and professional publications. A passionate advocate for the advancement of women in psychology, a devoted mother and grandmother, a connoisseur of wine and international traveler extraordinaire, she touched the personal and professional lives of many. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Electron dynamics in Hall thruster

NASA Astrophysics Data System (ADS)

Marini, Samuel; Pakter, Renato

2015-11-01

Hall thrusters are plasma engines those use an electromagnetic fields combination to confine electrons, generate and accelerate ions. Widely used by aerospace industries those thrusters stand out for its simple geometry, high specific impulse and low demand for electric power. Propulsion generated by those systems is due to acceleration of ions produced in an acceleration channel. The ions are generated by collision of electrons with propellant gas atoms. In this context, we can realize how important is characterizing the electronic dynamics. Using Hamiltonian formalism, we derive the electron motion equation in a simplified electromagnetic fields configuration observed in hall thrusters. We found conditions those must be satisfied by electromagnetic fields to have electronic confinement in acceleration channel. We present configurations of electromagnetic fields those maximize propellant gas ionization and thus make propulsion more efficient. This work was supported by CNPq.

Minority-carrier lifetime in InP as a function of light bias

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Redistributing Chern numbers and quantum Hall transitions in multi-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.; Jiang, C.

2018-07-01

We numerically study the integer quantum Hall effect (IQHE) on m-band lattices. With continuous modulating the next-nearest-neighbor hopping integral t' , it is found that the full band is divided into 2 m - 1 regions. There are m - 1 critical regions with pseudogaps induced by the merging between the two adjacent subbands, where both Chern numbers of the correlating Landau subbands and the corresponding Hall plateau are not well-defined. The other m regions with different well-defined Chern numbers are separated by the above m - 1 critical regions. Due to the redistributing Chern numbers of system induced by the merging of subbands, the Hall conductance exhibits a peculiar phase transition, which is characterized by the direct change of Hall plateau state.

Effect of azimuthal diversion rail on an ATON-type Hall thruster

NASA Astrophysics Data System (ADS)

Xu, Zhang; Liqiu, Wei; Liang, Han; Yongjie, Ding; Daren, Yu

2017-03-01

A newly designed azimuthal diversion rail (ADR) is studied and used to enhance the ionization process in an ATON-type Hall thruster. The diversion rail efficiently reduces the neutral flow axial velocity, and hence, increases the resistance time of atoms in the discharge channel of the Hall thruster. Thrust performances, in terms of thrust, anode efficiency and ion beam divergence, are found to be improved because of the application of the diversion rail, especially at low mass flow rate conditions. Experiment results reveal that the ADR increases the mass utilization under insufficient mass flow rate operating conditions. The design of the ADR broadens the efficient operating range of Hall thrusters and has significant contribution to multi-mode Hall thruster development.

Concert halls with strong lateral reflections enhance musical dynamics.

PubMed

Pätynen, Jukka; Tervo, Sakari; Robinson, Philip W; Lokki, Tapio

2014-03-25

One of the most thrilling cultural experiences is to hear live symphony-orchestra music build up from a whispering passage to a monumental fortissimo. The impact of such a crescendo has been thought to depend only on the musicians' skill, but here we show that interactions between the concert-hall acoustics and listeners' hearing also play a major role in musical dynamics. These interactions contribute to the shoebox-type concert hall's established success, but little prior research has been devoted to dynamic expression in this three-part transmission chain as a complete system. More forceful orchestral playing disproportionately excites high frequency harmonics more than those near the note's fundamental. This effect results in not only more sound energy, but also a different tone color. The concert hall transmits this sound, and the room geometry defines from which directions acoustic reflections arrive at the listener. Binaural directional hearing emphasizes high frequencies more when sound arrives from the sides of the head rather than from the median plane. Simultaneously, these same frequencies are emphasized by higher orchestral-playing dynamics. When the room geometry provides reflections from these directions, the perceived dynamic range is enhanced. Current room-acoustic evaluation methods assume linear behavior and thus neglect this effect. The hypothesis presented here is that the auditory excitation by reflections is emphasized with an orchestra forte most in concert halls with strong lateral reflections. The enhanced dynamic range provides an explanation for the success of rectangularly shaped concert-hall geometry.

Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain.

PubMed

Islam, S K Firoz

2018-07-11

The polymorph of 8-Pmmn borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite directions, which manifests itself via the valley dependent Landau levels in presence of an in-plane electric field (Hall field). The valley dependent Landau levels cause valley polarized magnetotransport properties in presence of the Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using linear response theory in low temperature regime. An analytical approximate form of the longitudinal conductivity is also obtained. It is observed that the tilting of the Dirac cones amplifies the frequency of the longitudinal conductivity oscillation (Shubnikov-de Haas). On the other hand, the Hall conductivity exhibits graphene-like plateaus except the appearance of valley dependent steps which are purely attributed to the Hall field induced lifting of the valley degeneracy in the Landau levels. Finally we look into the different cases when the Hall field is applied to the strained borophene and find that valley dependency is fully dominated by strain rather than Hall field. Another noticeable point is that if the real magnetic field is replaced by the strain induced pseudo magnetic field then the electric field looses its ability to cause valley polarized transport.

Modeling an anode layer Hall thruster and its plume

NASA Astrophysics Data System (ADS)

Choi, Yongjun

This thesis consists of two parts: a study of the D55 Hall thruster channel using a hydrodynamic model; and particle simulations of plasma plume flow from the D55 Hall thruster. The first part of this thesis investigates the xenon plasma properties within the D55 thruster channel using a hydrodynamic model. The discharge voltage (V) and current (I) characteristic of the D55 Hall thruster are studied. The hydrodynamic model fails to accurately predict the V-I characteristics. This analysis shows that the model needs to be improved. Also, the hydrodynamic model is used to simulate the plasma flow within the D55 Hall thruster. This analysis is performed to investigate the plasma properties of the channel exit. It is found that the hydrodynamic model is very sensitive to initial conditions, and fails to simulate the complete domain of the D55 Hall thruster. However, the model successfully calculates the channel domain of the D55 Hall thruster. The results show that, at the thruster exit, the plasma density has a maximum value while the ion velocity has a minimum at the channel center. Also, the results show that the flow angle varies almost linearly across the exit plane and increases from the center to the walls. Finally, the hydrodynamic model results are used to estimate the plasma properties at the thruster nozzle exit. The second part of the thesis presents two dimensional axisymmetric simulations of xenon plasma plume flow fields from the D55 anode layer Hall thruster. A hybrid particle-fluid method is used for the simulations. The magnetic field near the Hall thruster exit is included in the calculation. The plasma properties obtained from the hydrodynamic model are used to determine boundary conditions for the simulations. In these simulations, the Boltzmann model and a detailed fluid model are used to compute the electron properties, the direct simulation Monte Carlo method models the collisions of heavy particles, and the Particle-In-Cell method models the

Contextual view of the Hall of Transportation from Yerba Buena ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Contextual view of the Hall of Transportation from Yerba Buena Island, showing Palace of Fine and Decorative Arts (Building 3) at far right, camera facing northwest - Golden Gate International Exposition, Hall of Transportation, 440 California Avenue, Treasure Island, San Francisco, San Francisco County, CA

Plasma Properties in the Plume of a Hall Thruster Cluster

DTIC Science & Technology

2003-06-04

The Hall thruster cluster is an attractive propulsion approach for spacecraft requiring very high-power electric propulsion systems. This article...probes in the plume of a low-power, four-engine Hall thruster cluster. Simple analytical formulas are introduced that allow these quantities to be

Spin-hall-active platinum thin films grown via atomic layer deposition

NASA Astrophysics Data System (ADS)

Schlitz, Richard; Amusan, Akinwumi Abimbola; Lammel, Michaela; Schlicht, Stefanie; Tynell, Tommi; Bachmann, Julien; Woltersdorf, Georg; Nielsch, Kornelius; Goennenwein, Sebastian T. B.; Thomas, Andy

2018-06-01

We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. To estimate the spin transport parameters, we compare the magnitude of the magnetoresistance in samples with different Pt thicknesses. We check the spin Hall angle and the spin diffusion length of the ALD Pt layers against the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5 nm agrees well with that of platinum thin films reported in the literature, whereas the spin Hall magnetoresistance Δ ρ / ρ = 2.2 × 10 - 5 is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future.

Macroscopic Quantum Phase-Locking Model for the Quantum Hall = Effect

NASA Astrophysics Data System (ADS)

Wang, Te-Chun; Gou, Yih-Shun

1997-08-01

A macroscopic model of nonlinear dissipative phase-locking between a Josephson-like frequency and a macroscopic electron wave frequency is proposed to explain the Quantum Hall Effect. It is well known that a r.f-biased Josephson junction displays a collective phase-locking behavior which can be described by a non-autonomous second order equation or an equivalent 2+1-dimensional dynamical system. Making a direct analogy between the QHE and the Josephson system, this report proposes a computer-solving nonlinear dynamical model for the quantization of the Hall resistance. In this model, the Hall voltage is assumed to be proportional to a Josephson-like frequency and the Hall current is assumed related to a coherent electron wave frequency. The Hall resistance is shown to be quantized in units of the fine structure constant as the ratio of these two frequencies are locked into a rational winding number. To explain the sample-width dependence of the critical current, the 2DEG under large applied current is further assumed to develop a Josephson-like junction array in which all Josephson-like frequencies are synchronized. Other remarkable features of the QHE such as the resistance fluctuation and the even-denominator states are also discussed within this picture.

Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy

NASA Astrophysics Data System (ADS)

Hasebe, Kazuki

2017-07-01

We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.

Pair spectrometer hodoscope for Hall D at Jefferson Lab

DOE PAGES

Barbosa, Fernando J.; Hutton, Charles L.; Sitnikov, Alexandre; ...

2015-09-21

We present the design of the pair spectrometer hodoscope fabricated at Jefferson Lab and installed in the experimental Hall D. The hodoscope consists of thin scintillator tiles; the light from each tile is collected using wave-length shifting fibers and detected using a Hamamatsu silicon photomultiplier. Light collection was measured using relativistic electrons produced in the tagger area of the experimental Hall B.

Pair spectrometer hodoscope for Hall D at Jefferson Lab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbosa, Fernando J.; Hutton, Charles L.; Sitnikov, Alexandre

We present the design of the pair spectrometer hodoscope fabricated at Jefferson Lab and installed in the experimental Hall D. The hodoscope consists of thin scintillator tiles; the light from each tile is collected using wave-length shifting fibers and detected using a Hamamatsu silicon photomultiplier. Light collection was measured using relativistic electrons produced in the tagger area of the experimental Hall B.

Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernández, C.; Consejo, C.; Chaubet, C., E-mail: christophe.chaubet@univ-montp2.fr

2014-03-28

We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100 Hz, 1 MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Büttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In thismore » case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.« less

Modeling a Hall Thruster from Anode to Plume Far Field

DTIC Science & Technology

2008-12-31

Two dimensional ax symmetric simulations of xenon plasma plume flow fields from a D55 Anode layer Hall thruster is performed. A hybrid particle-fluid...method is used for the Simulations. The magnetic field surrounding the Hall thruster exit is included in the Calculation. The plasma properties

A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

PubMed

Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

2012-01-01

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

Observations of Hall Reconnection Physics Far Downstream of the X Line.

PubMed

Mistry, R; Eastwood, J P; Haggerty, C C; Shay, M A; Phan, T D; Hietala, H; Cassak, P A

2016-10-28

Observations made using the Wind spacecraft of Hall magnetic fields in solar wind reconnection exhausts are presented. These observations are consistent with the generation of Hall fields by a narrow ion inertial scale current layer near the separatrix, which is confirmed with an appropriately scaled particle-in-cell simulation that shows excellent agreement with observations. The Hall fields are observed thousands of ion inertial lengths downstream from the reconnection X line, indicating that narrow regions of kinetic dynamics can persist extremely far downstream.

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

NASA Astrophysics Data System (ADS)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

1000 Hours of Testing Completed on 10-kW Hall Thruster

NASA Technical Reports Server (NTRS)

Mason, Lee S.

2001-01-01

Between the months of April and August 2000, a 10-kW Hall effect thruster, designated T- 220, was subjected to a 1000-hr life test evaluation. Hall effect thrusters are propulsion devices that electrostatically accelerate xenon ions to produce thrust. Hall effect propulsion has been in development for many years, and low-power devices (1.35 kW) have been used in space for satellite orbit maintenance. The T-220, shown in the photo, produces sufficient thrust to enable efficient orbital transfers, saving hundreds of kilograms in propellant over conventional chemical propulsion systems. This test is the longest operation ever achieved on a high-power Hall thruster (greater than 4.5 kW) and is a key milestone leading to the use of this technology for future NASA, commercial, and military missions.

Hall effect on magnetohydrodynamic instabilities at an elliptic magnetic stagnation line

NASA Astrophysics Data System (ADS)

Spies, Günther O.; Faghihi, Mustafa

1987-06-01

To answer the question whether the Hall effect removes the unphysical feature of ideal magnetohydrodynamics of predicting small wavelength kink instabilities at any elliptic magnetic stagnation line, a normal mode analysis is performed of the motion of an incompressible Hall fluid about cylindrical Z-pinch equilibria with circular cross sections. The eigenvalue loci in the complex frequency plane are derived for the equilibrium with constant current density. Every particular mode becomes stable as the Hall parameter exceeds a critical value. This value, however, depends on the mode such that it increases to infinity as the ideal growth rate decreases to zero, implying that there always remains an infinite number of slowly growing instabilities. Correspondingly, the stability criterion for equilibria with arbitrary current distributions is independent of the Hall parameter.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities

NASA Astrophysics Data System (ADS)

Laczkowski, P.; Fu, Y.; Yang, H.; Rojas-Sánchez, J.-C.; Noel, P.; Pham, V. T.; Zahnd, G.; Deranlot, C.; Collin, S.; Bouard, C.; Warin, P.; Maurel, V.; Chshiev, M.; Marty, A.; Attané, J.-P.; Fert, A.; Jaffrès, H.; Vila, L.; George, J.-M.

2017-10-01

We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as +0.5 (i.e., 50 % ) for about 10% of Ta. In contrast, the SHA in AuW does not exceed +0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than 85 μ Ω cm ), are promising for spintronic devices exploiting the SHE.

Particle-in-cell simulations of Hall plasma thrusters

NASA Astrophysics Data System (ADS)

Miranda, Rodrigo; Ferreira, Jose Leonardo; Martins, Alexandre

2016-07-01

Hall plasma thrusters can be modelled using particle-in-cell (PIC) simulations. In these simulations, the plasma is described by a set of equations which represent a coupled system of charged particles and electromagnetic fields. The fields are computed using a spatial grid (i.e., a discretization in space), whereas the particles can move continuously in space. Briefly, the particle and fields dynamics are computed as follows. First, forces due to electric and magnetic fields are employed to calculate the velocities and positions of particles. Next, the velocities and positions of particles are used to compute the charge and current densities at discrete positions in space. Finally, these densities are used to solve the electromagnetic field equations in the grid, which are interpolated at the position of the particles to obtain the acting forces, and restart this cycle. We will present numerical simulations using software for PIC simulations to study turbulence, wave and instabilities that arise in Hall plasma thrusters. We have sucessfully reproduced a numerical simulation of a SPT-100 Hall thruster using a two-dimensional (2D) model. In addition, we are developing a 2D model of a cylindrical Hall thruster. The results of these simulations will contribute to improve the performance of plasma thrusters to be used in Cubesats satellites currenty in development at the Plasma Laboratory at University of Brasília.

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

DOE PAGES

Chen, Zhuoyu; Yuan, Hongtao; Xie, Yanwu; ...

2016-09-08

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3/SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-bandmore » model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3/SrTiO 3 interface.« less

Quantum Hall physics: Hierarchies and conformal field theory techniques

NASA Astrophysics Data System (ADS)

Hansson, T. H.; Hermanns, M.; Simon, S. H.; Viefers, S. F.

2017-04-01

The fractional quantum Hall effect, being one of the most studied phenomena in condensed matter physics during the past 30 years, has generated many ground-breaking new ideas and concepts. Very early on it was realized that the zoo of emerging states of matter would need to be understood in a systematic manner. The first attempts to do this, by Haldane and Halperin, set an agenda for further work which has continued to this day. Since that time the idea of hierarchies of quasiparticles condensing to form new states has been a pillar of our understanding of fractional quantum Hall physics. In the 30 years that have passed since then, a number of new directions of thought have advanced our understanding of fractional quantum Hall states and have extended it in new and unexpected ways. Among these directions is the extensive use of topological quantum field theories and conformal field theories, the application of the ideas of composite bosons and fermions, and the study of non-Abelian quantum Hall liquids. This article aims to present a comprehensive overview of this field, including the most recent developments.

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiaoyang

2014-12-10

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associatedmore » with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the

Scanning hall probe microscopy (SHPM) using quartz crystal AFM feedback.

PubMed

Dede, M; Urkmen, K; Girişen, O; Atabak, M; Oral, A; Farrer, I; Ritchie, D

2008-02-01

Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of approximately 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; therefore the insulating substrates have to be coated with a thin layer of gold. This constraint can be eliminated with the AFM feedback using sophisticated Hall probes that are integrated with AFM cantilevers. However it is very difficult to micro fabricate these sensors. In this work, we have eliminated the difficulty in the cantilever-Hall probe integration process, just by gluing a Hall Probe chip to a quartz crystal tuning fork force sensor. The Hall sensor chip is simply glued at the end of a 32.768 kHz or 100 kHz Quartz crystal, which is used as force sensor. An LT-SHPM system is used to scan the samples. The sensor assembly is dithered at the resonance frequency using a digital Phase Locked Loop circuit and frequency shifts are used for AFM tracking. SHPM electronics is modified to detect AFM topography and the frequency shift, along with the magnetic field image. Magnetic domains and topography of an Iron Garnet thin film crystal, NdFeB demagnetised magnet and hard disk samples are presented at room temperature. The performance is found to be comparable with the SHPM using STM feedback.

Familial Pallister-Hall in adulthood.

PubMed

Talsania, Mitali; Sharma, Rohan; Sughrue, Michael E; Scofield, R Hal; Lim, Jonea

2017-10-01

Pallister Hall syndrome is autosomal dominant disorder usually diagnosed in infants and children. Current diagnostic criteria include presence of hypothalamic hamartoma, post axial polydactyly and positive family history, but the disease has variable manifestations. Herein we report Pallister Hall syndrome diagnosed in a family where both patients were adults. A 59 year old man developed seizures 4 years prior to our evaluation of him, at which time imaging showed a hypothalamic hamartoma. The seizures were controlled medically. He did well until he had visual changes after a traumatic head injury. Repeat MRI showed slight expansion of the mass with formal visual field testing demonstrating bitemporal hemianopsia. There was no evidence of pituitary dysfunction except for large urine volume. He underwent surgery to debulk the hamartoma and the visual field defects improved. There was no hypopituitarism post-operatively, and the polydyspia resolved. His 29 year old daughter also had seizures and hypothalamic hamartoma. Both patients had had polydactyly with prior surgical correction in childhood. The daughter underwent genetic testing, which revealed a previously undescribed heterozygous single base pair deletion in exon 13 of the GLI3 gene causing a frameshift mutation. Further investigation into family history revealed multiple members in previous generations with polydactyly and/or seizures. Pallister-Hall syndrome is caused by an inherited autosomal dominant or de novo mutation in GLI3 gene. This rare syndrome has not had prevalence defined, however. Generally, diagnoses are made in the pediatric population. Our report adds to the few cases detected in adulthood.

A Planar Hall Thruster for Investigating Electron Mobility in ExB Devices (Preprint)

DTIC Science & Technology

2007-08-24

Hall thruster that emits and collects the Hall current across a planar discharge channel is described. The planar Hall thruster (PHT) is being investigated for use as a test bed to study electron mobility in ExB devices. The planar geometry attempts to de-couple the complex electron motion found in annular thrusters by using simplified geometry. During this initial test, the PHT was operated at discharge voltages between 50-150 V to verify operability and stability of the device. Hall current was emitted by hollow cathode electron sources and

New pathways towards efficient metallic spin Hall spintronics

DOE PAGES

Jungfleisch, Matthias Benjamin; Zhang, Wei; Jiang, Wanjun; ...

2015-11-16

Spin Hall effects (SHEs) interconvert spin- and charge currents due to spin- orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here, we review recent experimental efforts exploring efficient spin Hall detector materials as well as new approaches to drive collective magnetization dynamics and to manipulate spin textures by SHEs. As a result, these studies are also expected to impact practical spintronics applications beyond their significance in fundamental research.

Method for producing high carrier concentration p-Type transparent conducting oxides

DOEpatents

Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

2009-04-14

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Hall Effect–Mediated Magnetic Flux Transport in Protoplanetary Disks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Xue-Ning; Stone, James M.

2017-02-10

The global evolution of protoplanetary disks (PPDs) has recently been shown to be largely controlled by the amount of poloidal magnetic flux threading the disk. The amount of magnetic flux must also coevolve with the disk, as a result of magnetic flux transport, a process that is poorly understood. In weakly ionized gas as in PPDs, magnetic flux is largely frozen in the electron fluid, except when resistivity is large. When the disk is largely laminar, we show that the relative drift between the electrons and ions (the Hall drift), and the ions and neutral fluids (ambipolar drift) can playmore » a dominant role on the transport of magnetic flux. Using two-dimensional simulations that incorporate the Hall effect and ambipolar diffusion (AD) with prescribed diffusivities, we show that when large-scale poloidal field is aligned with disk rotation, the Hall effect rapidly drags magnetic flux inward at the midplane region, while it slowly pushes flux outward above/below the midplane. This leads to a highly radially elongated field configuration as a global manifestation of the Hall-shear instability. This field configuration further promotes rapid outward flux transport by AD at the midplane, leading to instability saturation. In quasi-steady state, magnetic flux is transported outward at approximately the same rate at all heights, and the rate is comparable to the Hall-free case. For anti-aligned field polarity, the Hall effect consistently transports magnetic flux outward, leading to a largely vertical field configuration in the midplane region. The field lines in the upper layer first bend radially inward and then outward to launch a disk wind. Overall, the net rate of outward flux transport is about twice as fast as that of the aligned case. In addition, the rate of flux transport increases with increasing disk magnetization. The absolute rate of transport is sensitive to disk microphysics, which remains to be explored in future studies.« less

Overview of NASA Iodine Hall Thruster Propulsion System Development

NASA Technical Reports Server (NTRS)

Smith, Timothy D.; Kamhawi, Hani; Hickman, Tyler; Haag, Thomas; Dankanich, John; Polzin, Kurt; Byrne, Lawrence; Szabo, James

2016-01-01

NASA is continuing to invest in advancing Hall thruster technologies for implementation in commercial and government missions. The most recent focus has been on increasing the power level for large-scale exploration applications. However, there has also been a similar push to examine applications of electric propulsion for small spacecraft in the range of 300 kg or less. There have been several recent iodine Hall propulsion system development activities performed by the team of the NASA Glenn Research Center, the NASA Marshall Space Flight Center, and Busek Co. Inc. In particular, the work focused on qualification of the Busek 200-W BHT-200-I and development of the 600-W BHT-600-I systems. This paper discusses the current status of iodine Hall propulsion system developments along with supporting technology development efforts.

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

NASA Astrophysics Data System (ADS)

Tong, Wen-Yi; Duan, Chun-Gang

2017-08-01

In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Li, Yong; Li, Shangsheng; Song, Mousheng; She, Yanchao; Wang, Qiang; Guan, Xuemao

2017-12-01

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.

The rotation of discs around neutron stars: dependence on the Hall diffusion

NASA Astrophysics Data System (ADS)

Faghei, Kazem; Salehi, Fatemeh

2018-01-01

In this paper, we study the dynamics of a geometrically thin, steady and axisymmetric accretion disc surrounding a rotating and magnetized star. The magnetic field lines of star penetrate inside the accretion disc and are twisted due to the differential rotation between the magnetized star and the disc. We apply the Hall diffusion effect in the accreting plasma, because of the Hall diffusion plays an important role in both fully ionized plasma and weakly ionized medium. In the current research, we show that the Hall diffusion is also an important mechanism in accreting plasma around neutron stars. For the typical system parameter values associated with the accreting X-ray binary pulsar, the angular velocity of the inner regions of disc departs outstandingly from Keplerian angular velocity, due to coupling between the magnetic field of neutron star and the rotating plasma of disc. We found that the Hall diffusion is very important in inner disc and increases the coupling between the magnetic field of neutron star and accreting plasma. On the other word, the rotational velocity of inner disc significantly decreases in the presence of the Hall diffusion. Moreover, the solutions imply that the fastness parameter decreases and the angular velocity transition zone becomes broad for the accreting plasma including the Hall diffusion.

G. Stanley Hall, Child Study, and the Teaching of Geography

ERIC Educational Resources Information Center

Koelsch, William A.

2002-01-01

G. Stanley Hall (1844-1924), founding president of Clark University, was a leader in the child study movement and a significant figure in psychology and education in the late nineteenth and early twentieth centuries. Hall had pronounced opinions on many educational subjects, including the teaching of geography. His criticisms and program for the…

Effects of Ionospheric Hall Polarization on Magnetospheric Configurations and Dynamics in Global MHD Simulation

NASA Astrophysics Data System (ADS)

Nakamizo, A.; Yoshikawa, A.; Tanaka, T.

2017-12-01

We investigate how the M-I coupling and boundary conditions affects the results of global simulations of the magnetosphere. More specifically, we examine the effects of ionospheric Hall polarization on magnetospheric convection and dynamics by using an MHD code developed by Tanaka et al. [2010]. This study is motivated by the recently proposed idea that the ionospheric convection is modified by the ionospheric polarization [Yoshikawa et al., 2013]. We perform simulations for the following pairs of Hall conductance and IMF-By; Hall conductance set by αH = 2, 3.5, 5, and uniform distribution (1.0 [S] everywhere), where RH is the ratio of Hall to Pedersen conductance, and IMF-By of positive, negative, and zero. The results are summarized as follows. (a) Large-scale structure: In the cases of uniform Hall conductance, the magnetosphere is completely symmetric under the zero IMF-By. In the cases of non-uniform Hall conductance, the magnetosphere shows asymmetries globally even under the zero IMF-By. Asymmetries become severe for larger αH. The results indicate that ionospheric Hall polarization is one of the important factors to determine the global structure. (b) Formation of NENL: The location becomes closer to the earth and timing becomes earlier for larger RH. The difference is considered to be related to the combined effects of field lines twisting due to ionospheric Hall polarization and M-I energy/current closures. (c) Near-earth convection: In the cases of non-uniform Hall conductance, an inflection structure is formed around premidnight sector on equatorial plane inside 10 RE. Considering that the region 2 FAC is not sufficiently generated in MHD models, the structure corresponds to a convection reversal often shown in the RCM. Previous studies regard the structure as the Harang Reversal in the magnetosphere. In the cases of uniform Hall conductance, by contrast, such structure is not formed, indicating that the Harang Reversal may not be formed without the

NASA Chief Technologist Hosts Town Hall

NASA Image and Video Library

2010-05-24

NASA's Chief Technologists, Bobby Braun, hosts a Town Hall meeting to discuss agency-wide technology policy and programs at NASA Headquarters on Tuesday, May 25, 2010, in Washington. Photo Credit: (NASA/Carla Cioffi)

Cabana inducted into Hall of Fame

NASA Image and Video Library

2008-05-03

Former astronaut Al Worden (left) presents Stennis Space Center Director Bob Cabana with a gold medallion signifying his induction into the U.S. Astronaut Hall of Fame at Kennedy Space Center in Florida.

Moiré assisted fractional quantum Hall state spectroscopy

DOE PAGES

Wu, Fengcheng; MacDonald, A. H.

2016-12-14

Intra-Landau level excitations in the fractional quantum Hall regime are not accessible via optical absorption measurements. Here we point out that optical probes are enabled by the periodic potentials produced by a moire pattern. Our observation is motivated by the recent observations of fractional quantum Hall incompressible states in moire-patterned graphene on a hexagonal boron nitride substrate, and is theoretically based on f-sum rule considerations supplemented by a perturbative analysis of the influence of the moire potential on many-body states.

Non-Intrusive, Time-Resolved Hall Thruster Near-Field Electron Temperature Measurements

DTIC Science & Technology

2011-08-01

With the growing interest in Hall thruster technology, comes the need to fully characterize the plasma dynamics that determine performance. Of...instabilities characteristic of Hall thruster behavior, time resolved techniques must be developed. This study presents a non-intrusive method of

AGU Position Statements Addressed at Fall Meeting Town Hall

NASA Astrophysics Data System (ADS)

Hankin, Erik

2013-01-01

The AGU Outreach Committee and Public Affairs staff held a town hall at the 2012 Fall Meeting to discuss AGU position statements. The town hall, "AGU Position Statements: Announcing New Submission and Review Methods," held on Monday, 3 December, provided background on AGU position statements, recent changes to the review and writing processes, updates on statements under revision, and ways for members to utilize and impact position statements.

ENCOURAGING ELECTRICITY SAVINGS IN A UNIVERSITY RESIDENTIAL HALL THROUGH A COMBINATION OF FEEDBACK, VISUAL PROMPTS, AND INCENTIVES

PubMed Central

Bekker, Marthinus J; Cumming, Tania D; Osborne, Nikola K.P; Bruining, Angela M; McClean, Julia I; Leland, Louis S

2010-01-01

This experiment investigated the combined use of visual prompts, daily feedback, and rewards to reduce electricity consumption in a university residential hall. After a 17-day baseline period, the experimental intervention was introduced in the intervention hall, and no change was made in the control hall. Energy usage decreased in the intervention hall, but energy usage did not change appreciably in the control hall. In the intervention hall, mean daytime and nighttime savings were 16.2% and 10.7%, respectively, compared to savings of 3.8% (day) and 6.5% (night) in the control hall. PMID:21119909

Anisotropic anomalous Hall effect in triangular itinerant ferromagnet Fe3GeTe2

NASA Astrophysics Data System (ADS)

Wang, Yihao; Xian, Cong; Wang, Jian; Liu, Bingjie; Ling, Langsheng; Zhang, Lei; Cao, Liang; Qu, Zhe; Xiong, Yimin

2017-10-01

Magnetic frustrated materials are of great interest for their novel spin-dependent transport properties. We report an anisotropic anomalous Hall effect in the triangular itinerant ferromagnet Fe3GeTe2 . When the current flows along the a b plane, Fe3GeTe2 exhibits the conventional anomalous Hall effect below the Curie temperature Tc, which can be depicted by Karplus-Luttinger theory. On the other hand, the topological Hall effect shows up below Tc with current along the c axis. The enhancement of Hall resistivity can be attributed to the chiral effect during the spin-flop process.

Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

NASA Technical Reports Server (NTRS)

Peng, C. K.; Sinha, S.; Morkoc, H.

1987-01-01

Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

Protecting Your Residence Hall Furniture Investment.

ERIC Educational Resources Information Center

Wiens, Janet

2003-01-01

Asserting that residence hall furniture takes abuse simply through use, discusses a three-part approach--student involvement and education, creating the right environment, and ongoing maintenance--that helps reduce normal wear and tear. (EV)

Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

NASA Astrophysics Data System (ADS)

Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

2016-10-01

Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

14 CFR 380.11 - Payment to direct air carrier(s).

Code of Federal Regulations, 2010 CFR

2010-01-01

... carrier(s). Except for air taxi operators and commuter air carriers (which are governed by 14 CFR 298.38) and Canadian charter air taxi operators (which are governed by 14 CFR 294.32), the direct air carrier...

14 CFR 380.11 - Payment to direct air carrier(s).

Code of Federal Regulations, 2011 CFR

2011-01-01

... carrier(s). Except for air taxi operators and commuter air carriers (which are governed by 14 CFR 298.38) and Canadian charter air taxi operators (which are governed by 14 CFR 294.32), the direct air carrier...

Structural and electrical properties of In-implanted Ge

DOE PAGES

Feng, R.; Kremer, F.; Sprouster, D. J.; ...

2015-10-22

Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated withmore » the substitutional In fraction.« less

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James; Kamhawi, Hani; Yim, John; Clayman, Lauren

2016-01-01

The life of Hall Effect thrusters are primarily limited by plasma erosion and thermal related failures. NASA Glenn Research Center (GRC) in cooperation with the Jet Propulsion Laboratory (JPL) have recently completed development of a Hall thruster with specific emphasis to mitigate these limitations. Extending the operational life of Hall thursters makes them more suitable for some of NASA's longer duration interplanetary missions. This paper documents the thermal model development, refinement and correlation of results with thruster test data. Correlation was achieved by minimizing uncertainties in model input and recognizing the relevant parameters for effective model tuning. Throughout the thruster design phase the model was used to evaluate design options and systematically reduce component temperatures. Hall thrusters are inherently complex assemblies of high temperature components relying on internal conduction and external radiation for heat dispersion and rejection. System solutions are necessary in most cases to fully assess the benefits and/or consequences of any potential design change. Thermal model correlation is critical since thruster operational parameters can push some components/materials beyond their temperature limits. This thruster incorporates a state-of-the-art magnetic shielding system to reduce plasma erosion and to a lesser extend power/heat deposition. Additionally a comprehensive thermal design strategy was employed to reduce temperatures of critical thruster components (primarily the magnet coils and the discharge channel). Long term wear testing is currently underway to assess the effectiveness of these systems and consequently thruster longevity.

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Outdoor concert hall sound design: idea and possible solutions

NASA Astrophysics Data System (ADS)

Kim, Yang-Hann; Lee, Jung-Min; Kim, Wanjung; Kim, Hwan; Choi, Jung-Woo; Wang, Semyung

Sound design of outdoor concert halls needs to satisfy two contradictory objectives: good sound reproduction within the hall, as well as the minimization of external sound radiation. Outdoor concert hall usually has open space, therefore good sound for the listeners can be bad sound for its neighborhood. It would be a good attempt to have a virtual sound wall that can reflect all sound, therefore making a relatively quiet zone in the outside. This attempt can be possible if we could produce invisible but very high impedance mismatch around the hall, for a selected frequency band. This can be possible if we can generate an acoustically bright zone inside and a dark (quite) zone outside. Earlier work [Choi, J.-W. and Kim, Y.-H. (2002). J. Acoust. Soc. Am. 111, 1695-1700], at least, assures it is possible for a selected region and frequencies. Simulations show that it is possible for a two-dimensional case. Experimental verification has been also tried. The discrepancies have been explained in terms of the number of loudspeakers, their spatial distributions, spacing with regard to wavelength. The dependency of its performances with respect to the size of bright and dark zone scaled by wavelength of interest has also been explained.

Role of chiral quantum Hall edge states in nuclear spin polarization.

PubMed

Yang, Kaifeng; Nagase, Katsumi; Hirayama, Yoshiro; Mishima, Tetsuya D; Santos, Michael B; Liu, Hongwu

2017-04-20

Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

NASA Chief Technologist Hosts Town Hall

NASA Image and Video Library

2010-05-24

Bobby Braun, NASA's Chief Technologist, answers questions during a Town Hall meeting to discuss agency-wide technology policy and programs at NASA Headquarters on Tuesday, May 25, 2010, in Washington. Photo Credit: (NASA/Carla Cioffi)