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Sample records for hall effect characterization

  1. Characterization of Hall effect thruster propellant distributors with flame visualization

    NASA Astrophysics Data System (ADS)

    Langendorf, S.; Walker, M. L. R.

    2013-01-01

    A novel method for the characterization and qualification of Hall effect thruster propellant distributors is presented. A quantitative measurement of the azimuthal number density uniformity, a metric which impacts propellant utilization, is obtained from photographs of a premixed flame anchored on the exit plane of the propellant distributor. The technique is demonstrated for three propellant distributors using a propane-air mixture at reservoir pressure of 40 psi (gauge) (377 kPa) exhausting to atmosphere, with volumetric flow rates ranging from 15-145 cfh (7.2-68 l/min) with equivalence ratios from 1.2 to 2.1. The visualization is compared with in-vacuum pressure measurements 1 mm downstream of the distributor exit plane (chamber pressure held below 2.7 × 10-5 Torr-Xe at all flow rates). Both methods indicate a non-uniformity in line with the propellant inlet, supporting the validity of the technique of flow visualization with flame luminosity for propellant distributor characterization. The technique is applied to a propellant distributor with a manufacturing defect in a known location and is able to identify the defect and characterize its impact. The technique is also applied to a distributor with numerous small orifices at the exit plane and is able to resolve the resulting non-uniformity. Luminosity data are collected with a spatial resolution of 48.2-76.1 μm (pixel width). The azimuthal uniformity is characterized in the form of standard deviation of azimuthal luminosities, normalized by the mean azimuthal luminosity. The distributors investigated achieve standard deviations of 0.346 ± 0.0212, 0.108 ± 0.0178, and 0.708 ± 0.0230 mean-normalized luminosity units respectively, where a value of 0 corresponds to perfect uniformity and a value of 1 represents a standard deviation equivalent to the mean.

  2. Spin Hall effect devices.

    PubMed

    Jungwirth, Tomas; Wunderlich, Jörg; Olejník, Kamil

    2012-05-01

    The spin Hall effect is a relativistic spin-orbit coupling phenomenon that can be used to electrically generate or detect spin currents in non-magnetic systems. Here we review the experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of the spin Hall devices have had in the demonstration of spintronic functionalities and physical phenomena. We have attempted to organize the experiments in a chronological order, while simultaneously dividing the Review into sections on semiconductor or metal spin Hall devices, and on optical or electrical spin Hall experiments. The spin Hall device studies are placed in a broader context of the field of spin injection, manipulation, and detection in non-magnetic conductors.

  3. Quantum spin Hall effect.

    PubMed

    Bernevig, B Andrei; Zhang, Shou-Cheng

    2006-03-17

    The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. The existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2(e/4pi). The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.

  4. Quantum Spin Hall Effect

    SciTech Connect

    Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. Existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2 e/4{pi}. The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.

  5. Optical Hall effect-model description: tutorial.

    PubMed

    Schubert, Mathias; Kühne, Philipp; Darakchieva, Vanya; Hofmann, Tino

    2016-08-01

    The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to the incident electric field, and analogous to the static electrical Hall effect. The electrical Hall effect and certain cases of the optical Hall effect observations can be explained by extensions of the classic Drude model for the transport of electrons in metals. The optical Hall effect is most useful for characterization of electrical properties in semiconductors. Among many advantages, while the optical Hall effect dispenses with the need of electrical contacts, electrical material properties such as effective mass and mobility parameters, including their anisotropy as well as carrier type and density, can be determined from the optical Hall effect. Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry at an oblique angle of incidence. In this paper, we review and discuss physical model equations, which can be used to calculate the optical Hall effect in single- and multiple-layered structures of semiconductor materials. We define the optical Hall effect dielectric function tensor, demonstrate diagonalization approaches, and show requirements for the optical Hall effect tensor from energy conservation. We discuss both continuum and quantum approaches, and we provide a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4×4 matrix algebra to calculate data accessible by experiment. In a follow-up paper, we will discuss strategies and approaches for experimental data acquisition and analysis.

  6. Optical Hall effect-model description: tutorial.

    PubMed

    Schubert, Mathias; Kühne, Philipp; Darakchieva, Vanya; Hofmann, Tino

    2016-08-01

    The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to the incident electric field, and analogous to the static electrical Hall effect. The electrical Hall effect and certain cases of the optical Hall effect observations can be explained by extensions of the classic Drude model for the transport of electrons in metals. The optical Hall effect is most useful for characterization of electrical properties in semiconductors. Among many advantages, while the optical Hall effect dispenses with the need of electrical contacts, electrical material properties such as effective mass and mobility parameters, including their anisotropy as well as carrier type and density, can be determined from the optical Hall effect. Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry at an oblique angle of incidence. In this paper, we review and discuss physical model equations, which can be used to calculate the optical Hall effect in single- and multiple-layered structures of semiconductor materials. We define the optical Hall effect dielectric function tensor, demonstrate diagonalization approaches, and show requirements for the optical Hall effect tensor from energy conservation. We discuss both continuum and quantum approaches, and we provide a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4×4 matrix algebra to calculate data accessible by experiment. In a follow-up paper, we will discuss strategies and approaches for experimental data acquisition and analysis. PMID:27505654

  7. Nonlocal Anomalous Hall Effect.

    PubMed

    Zhang, Steven S-L; Vignale, Giovanni

    2016-04-01

    The anomalous Hall (AH) effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator [yttrium iron garnet (YIG)], even when precautions are taken to ensure that there is no induced magnetization in the metal. We propose a theory of this effect based on the combined action of spin-dependent scattering from the magnetic interface and the spin-Hall effect in the bulk of the metal. At variance with previous theories, we predict the effect to be of first order in the spin-orbit coupling, just as the conventional anomalous Hall effect-the only difference being the spatial separation of the spin-orbit interaction and the magnetization. For this reason we name this effect the nonlocal anomalous Hall effect and predict that its sign will be determined by the sign of the spin-Hall angle in the metal. The AH conductivity that we calculate from our theory is in order of magnitude agreement with the measured values in Pt/YIG structures.

  8. Nonlocal Anomalous Hall Effect

    NASA Astrophysics Data System (ADS)

    Zhang, Steven S.-L.; Vignale, Giovanni

    2016-04-01

    The anomalous Hall (AH) effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator [yttrium iron garnet (YIG)], even when precautions are taken to ensure that there is no induced magnetization in the metal. We propose a theory of this effect based on the combined action of spin-dependent scattering from the magnetic interface and the spin-Hall effect in the bulk of the metal. At variance with previous theories, we predict the effect to be of first order in the spin-orbit coupling, just as the conventional anomalous Hall effect—the only difference being the spatial separation of the spin-orbit interaction and the magnetization. For this reason we name this effect the nonlocal anomalous Hall effect and predict that its sign will be determined by the sign of the spin-Hall angle in the metal. The AH conductivity that we calculate from our theory is in order of magnitude agreement with the measured values in Pt /YIG structures.

  9. Hall Effect in a Plasma.

    ERIC Educational Resources Information Center

    Kunkel, W. B.

    1981-01-01

    Describes an apparatus and procedure for conducting an undergraduate laboratory experiment to quantitatively study the Hall effect in a plasma. Includes background information on the Hall effect and rationale for conducting the experiment. (JN)

  10. Nonlocal anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Zhang, Shulei; Vignale, Giovanni

    Anomalous Hall effect (AHE) is a distinctive transport property of ferromagnetic metals arising from spin orbit coupling (SOC) in concert with spontaneous spin polarization. Nonetheless, recent experiments have shown that the effect also appears in a nonmagnetic metal in contact with a magnetic insulator. The main puzzle lies in the apparent absence of spin polarized electrons in the non-magnetic metal. Here, we theoretically demonstrate that the scattering of electrons from a rough metal-insulator interface is generally spin-dependent, which results in mutual conversion between spin and charge currents flowing in the plane of the layer. It is the current-carrying spin polarized electrons and the spin Hall effect in the bulk of the metal layer that conspire to generate the AH current. This novel AHE differs from the conventional one only in the spatial separation of the SOC and the magnetization, so we name it as nonlocal AHE. In contrast to other previously proposed mechanisms (e.g., spin Hall AHE and magnetic proximity effect (MPE)), the nonlocal AHE appears on the first order of spin Hall angle and does not rely on the induced moments in the metal layer, which make it experimentally detectable by contrasting the AH current directions of two layered structures such as Pt/Cu/YIG and β -Ta/Cu/YIG (with a thin inserted Cu layer to eliminate the MPE). We predict that the directions of the AH currents in these two trilayers would be opposite since the spin Hall angles of Pt and β -Ta are of opposite signs. Work supported by NSF Grants DMR-1406568.

  11. Spin Hall effects

    NASA Astrophysics Data System (ADS)

    Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

    2015-10-01

    Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

  12. Performance and Thermal Characterization of the NASA-300MS 20 kW Hall Effect Thruster

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Shastry, Rohit; Soulas, George; Smith, Timothy; Mikellides, Ioannis; Hofer, Richard

    2013-01-01

    NASA's Space Technology Mission Directorate is sponsoring the development of a high fidelity 15 kW-class long-life high performance Hall thruster for candidate NASA technology demonstration missions. An essential element of the development process is demonstration that incorporation of magnetic shielding on a 20 kW-class Hall thruster will yield significant improvements in the throughput capability of the thruster without any significant reduction in thruster performance. As such, NASA Glenn Research Center and the Jet Propulsion Laboratory collaborated on modifying the NASA-300M 20 kW Hall thruster to improve its propellant throughput capability. JPL and NASA Glenn researchers performed plasma numerical simulations with JPL's Hall2De and a commercially available magnetic modeling code that indicated significant enhancement in the throughput capability of the NASA-300M can be attained by modifying the thruster's magnetic circuit. This led to modifying the NASA-300M magnetic topology to a magnetically shielded topology. This paper presents performance evaluation results of the two NASA-300M magnetically shielded thruster configurations, designated 300MS and 300MS-2. The 300MS and 300MS-2 were operated at power levels between 2.5 and 20 kW at discharge voltages between 200 and 700 V. Discharge channel deposition from back-sputtered facility wall flux, and plasma potential and electron temperature measurements made on the inner and outer discharge channel surfaces confirmed that magnetic shielding was achieved. Peak total thrust efficiency of 64% and total specific impulse of 3,050 sec were demonstrated with the 300MS-2 at 20 kW. Thermal characterization results indicate that the boron nitride discharge chamber walls temperatures are approximately 100 C lower for the 300MS when compared to the NASA- 300M at the same thruster operating discharge power.

  13. A CMOS Hall-Effect Sensor for the Characterization and Detection of Magnetic Nanoparticles for Biomedical Applications.

    PubMed

    Liu, Paul; Skucha, Karl; Megens, Mischa; Boser, Bernhard

    2011-10-01

    A CMOS Hall-effect sensor chip designed for the characterization and detection of magnetic nanoparticles (MNPs) achieves over three orders of magnitude better temporal resolution than prior solutions based on superconducting quantum interference devices and fluxgate sensors. The sensor relies on wires embedded in the chip to generate a local magnetizing field that is switched OFF rapidly to observe the relaxation field of the MNPs. The CMOS sensor chip, with integrated high-speed readout electronics, occupies 6.25 mm(2). It can be easily integrated with microfluidics and is suitable for lab-on-a-chip and point-of-care applications. PMID:25308989

  14. A CMOS Hall-Effect Sensor for the Characterization and Detection of Magnetic Nanoparticles for Biomedical Applications.

    PubMed

    Liu, Paul; Skucha, Karl; Megens, Mischa; Boser, Bernhard

    2011-10-01

    A CMOS Hall-effect sensor chip designed for the characterization and detection of magnetic nanoparticles (MNPs) achieves over three orders of magnitude better temporal resolution than prior solutions based on superconducting quantum interference devices and fluxgate sensors. The sensor relies on wires embedded in the chip to generate a local magnetizing field that is switched OFF rapidly to observe the relaxation field of the MNPs. The CMOS sensor chip, with integrated high-speed readout electronics, occupies 6.25 mm(2). It can be easily integrated with microfluidics and is suitable for lab-on-a-chip and point-of-care applications.

  15. A CMOS Hall-Effect Sensor for the Characterization and Detection of Magnetic Nanoparticles for Biomedical Applications

    PubMed Central

    Liu, Paul; Skucha, Karl; Megens, Mischa; Boser, Bernhard

    2014-01-01

    A CMOS Hall-effect sensor chip designed for the characterization and detection of magnetic nanoparticles (MNPs) achieves over three orders of magnitude better temporal resolution than prior solutions based on superconducting quantum interference devices and fluxgate sensors. The sensor relies on wires embedded in the chip to generate a local magnetizing field that is switched OFF rapidly to observe the relaxation field of the MNPs. The CMOS sensor chip, with integrated high-speed readout electronics, occupies 6.25 mm2. It can be easily integrated with microfluidics and is suitable for lab-on-a-chip and point-of-care applications. PMID:25308989

  16. Design and Characterization of a Three-Axis Hall Effect-Based Soft Skin Sensor.

    PubMed

    Tomo, Tito Pradhono; Somlor, Sophon; Schmitz, Alexander; Jamone, Lorenzo; Huang, Weijie; Kristanto, Harris; Sugano, Shigeki

    2016-04-07

    This paper presents an easy means to produce a 3-axis Hall effect-based skin sensor for robotic applications. It uses an off-the-shelf chip and is physically small and provides digital output. Furthermore, the sensor has a soft exterior for safe interactions with the environment; in particular it uses soft silicone with about an 8 mm thickness. Tests were performed to evaluate the drift due to temperature changes, and a compensation using the integral temperature sensor was implemented. Furthermore, the hysteresis and the crosstalk between the 3-axis measurements were evaluated. The sensor is able to detect minimal forces of about 1 gf. The sensor was calibrated and results with total forces up to 1450 gf in the normal and tangential directions of the sensor are presented. The test revealed that the sensor is able to measure the different components of the force vector.

  17. Design and Characterization of a Three-Axis Hall Effect-Based Soft Skin Sensor.

    PubMed

    Tomo, Tito Pradhono; Somlor, Sophon; Schmitz, Alexander; Jamone, Lorenzo; Huang, Weijie; Kristanto, Harris; Sugano, Shigeki

    2016-01-01

    This paper presents an easy means to produce a 3-axis Hall effect-based skin sensor for robotic applications. It uses an off-the-shelf chip and is physically small and provides digital output. Furthermore, the sensor has a soft exterior for safe interactions with the environment; in particular it uses soft silicone with about an 8 mm thickness. Tests were performed to evaluate the drift due to temperature changes, and a compensation using the integral temperature sensor was implemented. Furthermore, the hysteresis and the crosstalk between the 3-axis measurements were evaluated. The sensor is able to detect minimal forces of about 1 gf. The sensor was calibrated and results with total forces up to 1450 gf in the normal and tangential directions of the sensor are presented. The test revealed that the sensor is able to measure the different components of the force vector. PMID:27070604

  18. The Hall Effect

    NASA Technical Reports Server (NTRS)

    1985-01-01

    The experimental procedure consists of the measurement of the Hall coefficient, resistivity, and Hall mobility as a function of temperature of a sample of gallium arsenides before and after irradiation with low and high energy protons. Work has begun on the development of the theory and subsequently experiments will be designed and performed.

  19. Characterization of Residual Stresses in Ferrous Components by Magnetic Anisotropy Measurements Using a Hall Effect Sensor Array Probe

    NASA Astrophysics Data System (ADS)

    Lo, C. C. H.

    2011-06-01

    A new surface sensor probe comprising an angular array of Hall effect sensors has been developed for characterization of residual stresses in ferrous materials by means of stress-induced magnetic anisotropy measurements. The sensor probe applies a radially spreading ac magnetic field to a test sample, and detects stray fields in different directions simultaneously to determine the principal stress axes. In situ measurements were conducted on a annealed steel plate under four-point bending stresses to evaluate the probe performance. The ratio of stray field signals measured along and perpendicular to the stress axis varies linearly with the surface stress, indicating the possibility of characterizing residual stresses in ferrous components using the sensor array probe.

  20. Anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Nagaosa, Naoto; Sinova, Jairo; Onoda, Shigeki; MacDonald, A. H.; Ong, N. P.

    2010-04-01

    The anomalous Hall effect (AHE) occurs in solids with broken time-reversal symmetry, typically in a ferromagnetic phase, as a consequence of spin-orbit coupling. Experimental and theoretical studies of the AHE are reviewed, focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical works, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of the Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors have established systematic trends. These two developments, in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of the Berry-phase curvatures and it is therefore an intrinsic quantum-mechanical property of a perfect crystal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. The full modern semiclassical treatment of the AHE is reviewed which incorporates an anomalous contribution to wave-packet group velocity due to momentum-space Berry curvatures and correctly combines the roles of intrinsic and extrinsic (skew-scattering and side-jump) scattering-related mechanisms. In addition, more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms are reviewed, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Building on results from recent experiment and theory, a

  1. Hall Effect Gyrators and Circulators

    NASA Astrophysics Data System (ADS)

    Viola, Giovanni; DiVincenzo, David P.

    2014-04-01

    The electronic circulator and its close relative the gyrator are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative nonreciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an Ohmically contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90°. In this limit, we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the ac wavelength. An experiment is proposed to achieve GHz-band gyration in millimeter (and smaller) scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realizing a Hall gyrator is also analyzed.

  2. Multilayer thin film Hall effect device

    NASA Technical Reports Server (NTRS)

    Peters, Palmer N. (Inventor); Sisk, R. Charles (Inventor)

    1994-01-01

    A Hall effect device and a method of obtaining a magnetic field map of a magnetic body with the Hall effect device are presented. The device comprises: (1) a substrate, (2) a first layer having a first Hall coefficient deposited over the substrate, and (3) a second layer having a second Hall coefficient deposited over the first layer, the first and second layers cooperating to create, in the Hall effect device, a third Hall coefficient different from the first and second Hall coefficients. Creation of the third Hall coefficient by cooperation of the first and second layers allows use of materials for the first and second layers that were previously unavailable for Hall effect devices due to their relatively weak Hall coefficient.

  3. Design and Characterization of a Three-Axis Hall Effect-Based Soft Skin Sensor

    PubMed Central

    Tomo, Tito Pradhono; Somlor, Sophon; Schmitz, Alexander; Jamone, Lorenzo; Huang, Weijie; Kristanto, Harris; Sugano, Shigeki

    2016-01-01

    This paper presents an easy means to produce a 3-axis Hall effect–based skin sensor for robotic applications. It uses an off-the-shelf chip and is physically small and provides digital output. Furthermore, the sensor has a soft exterior for safe interactions with the environment; in particular it uses soft silicone with about an 8 mm thickness. Tests were performed to evaluate the drift due to temperature changes, and a compensation using the integral temperature sensor was implemented. Furthermore, the hysteresis and the crosstalk between the 3-axis measurements were evaluated. The sensor is able to detect minimal forces of about 1 gf. The sensor was calibrated and results with total forces up to 1450 gf in the normal and tangential directions of the sensor are presented. The test revealed that the sensor is able to measure the different components of the force vector. PMID:27070604

  4. Planar Hall effect bridge magnetic field sensors

    SciTech Connect

    Henriksen, A. D.; Dalslet, B. T.; Skieller, D. H.; Lee, K. H.; Okkels, F.; Hansen, M. F.

    2010-07-05

    Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can be significantly enhanced by a geometric factor. For the samples in the present study, we demonstrate an enhancement of the sensor output by a factor of about 100 compared to cross-shaped sensors. The presented construction opens a new design and application area of the planar Hall effect, which we term planar Hall effect bridge sensors.

  5. Planar Hall effect bridge magnetic field sensors

    NASA Astrophysics Data System (ADS)

    Henriksen, A. D.; Dalslet, B. T.; Skieller, D. H.; Lee, K. H.; Okkels, F.; Hansen, M. F.

    2010-07-01

    Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can be significantly enhanced by a geometric factor. For the samples in the present study, we demonstrate an enhancement of the sensor output by a factor of about 100 compared to cross-shaped sensors. The presented construction opens a new design and application area of the planar Hall effect, which we term planar Hall effect bridge sensors.

  6. The Other Hall Effect: College Board Physics

    ERIC Educational Resources Information Center

    Sheppard, Keith; Gunning, Amanda M.

    2013-01-01

    Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

  7. Hyperbolic supersymmetric quantum Hall effect

    SciTech Connect

    Hasebe, Kazuki

    2008-12-15

    Developing a noncompact version of the supersymmetric Hopf map, we formulate the quantum Hall effect on a superhyperboloid. Based on OSp(1|2) group theoretical methods, we first analyze the one-particle Landau problem, and successively explore the many-body problem where the Laughlin wave function, hard-core pseudopotential Hamiltonian, and topological excitations are derived. It is also shown that the fuzzy superhyperboloid emerges at the lowest Landau level.

  8. The Other Hall Effect: College Board Physics

    NASA Astrophysics Data System (ADS)

    Sheppard, Keith; Gunning, Amanda M.

    2013-09-01

    Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance Requirements was contentious and his involvement in launching College Board Physics, what we call the "other Hall effect," has largely been overlooked. This article details Hall's role in the development of College Board Physics.

  9. Performance and Facility Background Pressure Characterization Tests of NASAs 12.5-kW Hall Effect Rocket with Magnetic Shielding Thruster

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Shastry, Rohit; Thomas, Robert; Yim, John; Herman, Daniel; Williams, George; Myers, James; Hofer, Richard; Mikellides, Ioannis; Sekerak, Michael; Polk, James

    2015-01-01

    NASA's Space Technology Mission Directorate (STMD) Solar Electric Propulsion Technology Demonstration Mission (SEP/TDM) project is funding the development of a 12.5-kW Hall thruster system to support future NASA missions. The thruster designated Hall Effect Rocket with Magnetic Shielding (HERMeS) is a 12.5-kW Hall thruster with magnetic shielding incorporating a centrally mounted cathode. HERMeS was designed and modeled by a NASA GRC and JPL team and was fabricated and tested in vacuum facility 5 (VF5) at NASA GRC. Tests at NASA GRC were performed with the Technology Development Unit 1 (TDU1) thruster. TDU1's magnetic shielding topology was confirmed by measurement of anode potential and low electron temperature along the discharge chamber walls. Thermal characterization tests indicated that during full power thruster operation at peak magnetic field strength, the various thruster component temperatures were below prescribed maximum allowable limits. Performance characterization tests demonstrated the thruster's wide throttling range and found that the thruster can achieve a peak thruster efficiency of 63% at 12.5 kW 500 V and can attain a specific impulse of 3,000 s at 12.5 kW and a discharge voltage of 800 V. Facility background pressure variation tests revealed that the performance, operational characteristics, and magnetic shielding effectiveness of the TDU1 design were mostly insensitive to increases in background pressure.

  10. Combinatorial measurements of Hall effect and resistivity in oxide films.

    PubMed

    Clayhold, J A; Kerns, B M; Schroer, M D; Rench, D W; Logvenov, G; Bollinger, A T; Bozovic, I

    2008-03-01

    A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect. PMID:18377026

  11. Is The Intrinsic Spin Hall Effect Measurable?

    NASA Astrophysics Data System (ADS)

    Yang, Zhaoyang

    2005-03-01

    Despite of the large intrinsic spin Hall conductivity in a spin- orbit coupled material predicted theoretically, we show that the intrinsic spin Hall effect in any diffusive sample is not measurable via conventional transport methods, thus the research on the intrinsic spin Hall effect is limited at the pure theoretical content. After generally defining the intrinsic and extrinsic transport coefficients, we show that the intrinsic magnetization Hall current, which is the sum of the intrinsic spin and intrinsic orbit-angular-momentum Hall currents, is identically zero. More importantly, we demonstrate that the equation of motion for the spin density does not depend on the intrinsic spin Hall current, therefore the transverse spin accumulation is solely determined by the extrinsic spin Hall current. The zero intrinsic magnetization Hall current and the independence of the spin accumulation on the intrinsic spin Hall effect lead us to conclude that the intrinsic spin Hall effect can not be assessed by conventional spin transport experiments based on the measurement of the magnetization current and the spin accumulation at the edge of the sample.

  12. Hall-effect arc protector

    DOEpatents

    Rankin, R.A.; Kotter, D.K.

    1997-05-13

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored. 2 figs.

  13. Hall-effect arc protector

    DOEpatents

    Rankin, Richard A.; Kotter, Dale K.

    1997-01-01

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored.

  14. Characterization of photo-induced anomalous Hall effect in the two-dimensional MoS2

    NASA Astrophysics Data System (ADS)

    Peng, Yingzi; Chen, Ji; Song, Yang; Li, Yuan

    2016-03-01

    We report the observation of a small but finite valley Hall effect (VHE) signal in two-dimensional MoS2 channels which is grown on SiO2/Si substrates under the circularly polarized light. And the angular dependence of VHE in two-dimensional MoS2 is studied. The VHE signal is a periodic function (period π) but with a phase shift, which confirms the presence of strong coupling between spin and valley. Furthermore, using a weak measurement under the condition of the optical circular dichroism, we find resembling beating phenomena, which suggests that a static electric field can induce oscillations. It is interesting that the interval time of the peak starts from an certain value, which is related to carrier densities. We suppose that this certain value is explained by a quasi-two-dimensional electron gas model, which is based on the Hall conductance quantized value of e2/h. To our knowledge, it is the first experiment that realizes such quantized values.

  15. Anomalous Hall effect in localization regime

    NASA Astrophysics Data System (ADS)

    Wu, Lin; Zhu, Kai; Yue, Di; Tian, Yuan; Jin, Xiaofeng

    2016-06-01

    The anomalous Hall effect in the ultrathin film regime is investigated in Fe(001)(1-3 nm) films epitaxial on MgO(001). The logarithmic localization correction to longitudinal resistivity and anomalous Hall resistivity are observed at low temperature. We identify that the coefficient of skew scattering has a reduction from metallic to localized regime, while the contribution of side jump has inconspicuous change except for a small drop below 10 K. Furthermore, we discover that the intrinsic anomalous Hall conductivity decreases with the reduction of thickness below 2 nm. Our results provide unambiguous experimental evidence to clarify the problem of localization correction to the anomalous Hall effect.

  16. Anomalous Hall effect in ferromagnetic semiconductors.

    PubMed

    Jungwirth, T; Niu, Qian; MacDonald, A H

    2002-05-20

    We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.

  17. The quantum Hall effect helicity

    SciTech Connect

    Shrivastava, Keshav N.

    2015-04-16

    The quantum Hall effect in semiconductor heterostructures is explained by two signs in the angular momentum j=l±s and g=(2j+1)/(2l+1) along with the Landau factor (n+1/2). These modifications in the existing theories explain all of the fractional charges. The helicity which is the sign of the product of the linear momentum with the spin p.s plays an important role for the understanding of the data at high magnetic fields. In particular it is found that particles with positive sign in the spin move in one direction and those with negative sign move in another direction which explains the up and down stream motion of the particles.

  18. Metal-Film Hall-Effect Devices

    NASA Technical Reports Server (NTRS)

    Peters, Palmer N.

    1994-01-01

    Large positive and negative Hall coefficients achievable. Family of Hall-effect devices made from multilayer metal films instead of semiconductor materials. Metal films easier to fabricate; formed by deposition on variety of substrates, and leads readily attached to them. Fabricated with larger areas, potentially more reliable, and less affected by impurities. Also used to measure magnetic fields. Devices especially useful at low temperatures.

  19. Quantum Hall effect in quantum electrodynamics

    SciTech Connect

    Penin, Alexander A.

    2009-03-15

    We consider the quantum Hall effect in quantum electrodynamics and find a deviation from the quantum-mechanical prediction for the Hall conductivity due to radiative antiscreening of electric charge in an external magnetic field. A weak dependence of the universal von Klitzing constant on the magnetic field strength, which can possibly be observed in a dedicated experiment, is predicted.

  20. The quantum Hall effects: Philosophical approach

    NASA Astrophysics Data System (ADS)

    Lederer, P.

    2015-05-01

    The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

  1. Quantum Hall effect in momentum space

    NASA Astrophysics Data System (ADS)

    Ozawa, Tomoki; Price, Hannah M.; Carusotto, Iacopo

    2016-05-01

    We theoretically discuss a momentum-space analog of the quantum Hall effect, which could be observed in topologically nontrivial lattice models subject to an external harmonic trapping potential. In our proposal, the Niu-Thouless-Wu formulation of the quantum Hall effect on a torus is realized in the toroidally shaped Brillouin zone. In this analogy, the position of the trap center in real space controls the magnetic fluxes that are inserted through the holes of the torus in momentum space. We illustrate the momentum-space quantum Hall effect with the noninteracting trapped Harper-Hofstadter model, for which we numerically demonstrate how this effect manifests itself in experimental observables. Extension to the interacting trapped Harper-Hofstadter model is also briefly considered. We finally discuss possible experimental platforms where our proposal for the momentum-space quantum Hall effect could be realized.

  2. Quantum anomalous Hall effect with higher plateaus.

    PubMed

    Wang, Jing; Lian, Biao; Zhang, Haijun; Xu, Yong; Zhang, Shou-Cheng

    2013-09-27

    The quantum anomalous Hall (QAH) effect in magnetic topological insulators is driven by the combination of spontaneous magnetic moments and spin-orbit coupling. Its recent experimental discovery raises the question if higher plateaus can also be realized. Here, we present a general theory for a QAH effect with higher Chern numbers and show by first-principles calculations that a thin film magnetic topological insulator of Cr-doped Bi2(Se,Te)3 is a candidate for the C=2 QAH insulator. Remarkably, whereas a higher magnetic field leads to lower Hall conductance plateaus in the integer quantum Hall effect, a higher magnetic moment leads to higher Hall conductance plateaus in the QAH effect.

  3. Hall effect degradation of rail gun performance

    NASA Astrophysics Data System (ADS)

    Witalis, E. A.; Gunnarsson, Patrik

    1993-01-01

    The paper discusses the Hall effect and shows it to be significant in the low-density and high-field trailing part of a plasma armature. Without the Hall effect a simple armature model is derived. It exhibits properties expected from classical MHD theory and shows that the purely relativistic electric charge buildup on the rails is a fundamental gun property, leading to V(breech) = 1.5 V(muzzle). The mathematics involved in accounting for Hall effect phenomena is described. These are of two types: the Hall-skewing of the armature current and the superimposed plasma flow rotation. For decreasing gun current the two effects efficiently combine to eject armature plasma rearwards, thus creating conditions for arc separation and parasitic arcs.

  4. Quantum hall effect at low magnetic fields

    PubMed

    Huckestein

    2000-04-01

    The temperature and scale dependence of resistivities in the standard scaling theory of the integer quantum Hall effect is discussed. It is shown that recent experiments, claiming to observe a discrepancy with the global phase diagram of the quantum Hall effect, are in fact in agreement with the standard theory. The apparent low-field transition observed in the experiments is identified as a crossover due to weak localization and a strong reduction of the conductivity when Landau quantization becomes dominant.

  5. Piezo Voltage Controlled Planar Hall Effect Devices

    NASA Astrophysics Data System (ADS)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  6. Piezo Voltage Controlled Planar Hall Effect Devices.

    PubMed

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  7. The phonon Hall effect: theory and application.

    PubMed

    Zhang, Lifa; Ren, Jie; Wang, Jian-Sheng; Li, Baowen

    2011-08-01

    We present a systematic theory of the phonon Hall effect in a ballistic crystal lattice system, and apply it on the kagome lattice which is ubiquitous in various real materials. By proposing a proper second quantization for the non-Hermitian in the polarization-vector space, we obtain a new heat current density operator with two separate contributions: the normal velocity responsible for the longitudinal phonon transport, and the anomalous velocity manifesting itself as the Hall effect of transverse phonon transport. As exemplified in kagome lattices, our theory predicts that the direction of Hall conductivity at low magnetic field can be reversed by tuning the temperatures, which we hope can be verified by experiments in the future. Three phonon-Hall-conductivity singularities induced by phonon-band-topology change are discovered as well, which correspond to the degeneracies at three different symmetric center points, Γ, K, X, in the wavevector space of the kagome lattice.

  8. Observation of a superfluid Hall effect.

    PubMed

    LeBlanc, Lindsay J; Jiménez-García, Karina; Williams, Ross A; Beeler, Matthew C; Perry, Abigail R; Phillips, William D; Spielman, Ian B

    2012-07-01

    Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)--internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect's sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose-Einstein condensate's transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system's global irrotationality influences this superfluid Hall signal.

  9. Observation of a superfluid Hall effect

    PubMed Central

    Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

    2012-01-01

    Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

  10. Boundary Effective Action for Quantum Hall States

    NASA Astrophysics Data System (ADS)

    Gromov, Andrey; Jensen, Kristan; Abanov, Alexander G.

    2016-03-01

    We consider quantum Hall states on a space with boundary, focusing on the aspects of the edge physics which are completely determined by the symmetries of the problem. There are four distinct terms of Chern-Simons type that appear in the low-energy effective action of the state. Two of these protect gapless edge modes. They describe Hall conductance and, with some provisions, thermal Hall conductance. The remaining two, including the Wen-Zee term, which contributes to the Hall viscosity, do not protect gapless edge modes but are instead related to the local boundary response fixed by symmetries. We highlight some basic features of this response. It follows that the coefficient of the Wen-Zee term can change across an interface without closing a gap or breaking a symmetry.

  11. Boundary Effective Action for Quantum Hall States.

    PubMed

    Gromov, Andrey; Jensen, Kristan; Abanov, Alexander G

    2016-03-25

    We consider quantum Hall states on a space with boundary, focusing on the aspects of the edge physics which are completely determined by the symmetries of the problem. There are four distinct terms of Chern-Simons type that appear in the low-energy effective action of the state. Two of these protect gapless edge modes. They describe Hall conductance and, with some provisions, thermal Hall conductance. The remaining two, including the Wen-Zee term, which contributes to the Hall viscosity, do not protect gapless edge modes but are instead related to the local boundary response fixed by symmetries. We highlight some basic features of this response. It follows that the coefficient of the Wen-Zee term can change across an interface without closing a gap or breaking a symmetry. PMID:27058090

  12. Boundary Effective Action for Quantum Hall States.

    PubMed

    Gromov, Andrey; Jensen, Kristan; Abanov, Alexander G

    2016-03-25

    We consider quantum Hall states on a space with boundary, focusing on the aspects of the edge physics which are completely determined by the symmetries of the problem. There are four distinct terms of Chern-Simons type that appear in the low-energy effective action of the state. Two of these protect gapless edge modes. They describe Hall conductance and, with some provisions, thermal Hall conductance. The remaining two, including the Wen-Zee term, which contributes to the Hall viscosity, do not protect gapless edge modes but are instead related to the local boundary response fixed by symmetries. We highlight some basic features of this response. It follows that the coefficient of the Wen-Zee term can change across an interface without closing a gap or breaking a symmetry.

  13. Hierarchical nature of the quantum Hall effects.

    PubMed

    Bonderson, Parsa

    2012-02-10

    I demonstrate that the wave function for a ν=n+ν[over ˜] quantum Hall state with Landau levels 0,1,…,n-1 filled and a filling fraction ν[over ˜] quantum Hall state with 0<ν[over ˜]≤1 in the nth Landau level can be obtained hierarchically from the ν=n state by introducing quasielectrons which are then projected into the (conjugate of the) ν[over ˜] state. In particular, the ν[over ˜]=1 case produces the filled Landau level wave functions hierarchically, thus establishing the hierarchical nature of the integer quantum Hall states. It follows that the composite fermion description of fractional quantum Hall states fits within the hierarchy theory of the fractional quantum Hall effect. I also demonstrate this directly by generating the composite fermion ground-state wave functions via application of the hierarchy construction to fractional quantum Hall states, starting from the ν=1/m Laughlin states.

  14. Extrinsic spin Hall effect in graphene

    NASA Astrophysics Data System (ADS)

    Rappoport, Tatiana

    The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

  15. Extrinsic spin Hall effect from first principles.

    PubMed

    Gradhand, Martin; Fedorov, Dmitry V; Zahn, Peter; Mertig, Ingrid

    2010-05-01

    We present an ab initio description of the spin Hall effect in metals. Our approach is based on density functional theory in the framework of a fully relativistic Korringa-Kohn-Rostoker method and the solution of a linearized Boltzmann equation including the scattering-in term (vertex corrections). The skew scattering mechanism at substitutional impurities is considered. Spin-orbit coupling in the host as well as at the impurity atom and the influence of spin-flip processes are fully taken into account. A sign change of the spin Hall effect in Cu and Au hosts is obtained as a function of the impurity atom, and even light elements like Li can cause a strong effect. It is shown that the gigantic spin Hall effect in Au can be caused by skew scattering at C and N impurities which are typical contaminations in a vacuum chamber.

  16. Extrinsic Spin Hall Effect from First Principles

    NASA Astrophysics Data System (ADS)

    Gradhand, Martin; Fedorov, Dmitry V.; Zahn, Peter; Mertig, Ingrid

    2010-05-01

    We present an ab initio description of the spin Hall effect in metals. Our approach is based on density functional theory in the framework of a fully relativistic Korringa-Kohn-Rostoker method and the solution of a linearized Boltzmann equation including the scattering-in term (vertex corrections). The skew scattering mechanism at substitutional impurities is considered. Spin-orbit coupling in the host as well as at the impurity atom and the influence of spin-flip processes are fully taken into account. A sign change of the spin Hall effect in Cu and Au hosts is obtained as a function of the impurity atom, and even light elements like Li can cause a strong effect. It is shown that the gigantic spin Hall effect in Au can be caused by skew scattering at C and N impurities which are typical contaminations in a vacuum chamber.

  17. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  18. Spin Hall effects in mesoscopic Pt films with high resistivity

    NASA Astrophysics Data System (ADS)

    Qin, Chuan; Luo, Yongming; Zhou, Chao; Cai, Yunjiao; Jia, Mengwen; Chen, Shuhan; Wu, Yizheng; Ji, Yi

    2016-10-01

    The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 µΩ · cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: {λ\\text{pt}}   ⩽  0.8 nm. The average product of {λ\\text{pt}} and the Pt spin Hall angle {α\\text{H}} is substantial: {α\\text{H}}{λ\\text{pt}}   =  (0.142  ±  0.040) nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.

  19. Observation of intrinsic inverse spin Hall effect.

    PubMed

    Werake, Lalani K; Ruzicka, Brian A; Zhao, Hui

    2011-03-11

    We report observation of intrinsic inverse spin Hall effect in undoped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect. PMID:21469830

  20. Giant Hall effect in nonmagnetic granular metal films.

    PubMed

    Zhang, X X; Wan, C; Liu, H; Li, Z Q; Sheng, P; Lin, J J

    2001-06-11

    Nearly 3 orders of magnitude enhancement in the Hall coefficient is observed in Cu(x)-(SiO(2))(1--x) granular films. This large enhancement of the Hall coefficient not only is significantly larger than the prediction of the classical percolation theory, but also occurs at a metal concentration identified to be the quantum percolation threshold. Measurements of the electron dephasing length and magnetoresistance, plus the TEM characterization of microstructures, yield a physical picture consistent with the mechanism of the local quantum interference effect.

  1. Spin Hall effect in doped semiconductor structures.

    PubMed

    Tse, Wang-Kong; Das Sarma, S

    2006-02-10

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  2. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  3. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, S.

    2006-02-01

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

  4. Theory of the phonon Hall effect in paramagnetic dielectrics.

    PubMed

    Sheng, L; Sheng, D N; Ting, C S

    2006-04-21

    Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect, including the sign, magnitude, and linear magnetic field dependence of the thermal Hall conductivity.

  5. Piezo Voltage Controlled Planar Hall Effect Devices

    PubMed Central

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

  6. Piezo Voltage Controlled Planar Hall Effect Devices.

    PubMed

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

  7. Unconventional integer quantum Hall effect in graphene.

    PubMed

    Gusynin, V P; Sharapov, S G

    2005-09-30

    Monolayer graphite films, or graphene, have quasiparticle excitations that can be described by (2+1)-dimensional Dirac theory. We demonstrate that this produces an unconventional form of the quantized Hall conductivity sigma(xy) = -(2e2/h)(2n+1) with n = 0, 1, ..., which notably distinguishes graphene from other materials where the integer quantum Hall effect was observed. This unconventional quantization is caused by the quantum anomaly of the n=0 Landau level and was discovered in recent experiments on ultrathin graphite films.

  8. Inverse spin Hall effect by spin injection

    NASA Astrophysics Data System (ADS)

    Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

    2007-09-01

    Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

  9. The Integer and Fractional Quantum Hall Effects.

    NASA Astrophysics Data System (ADS)

    Usher, Alan

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports investigations of the electrical conductivity of two-dimensional electron systems in high magnetic fields. Studies of the activated longitudinal conductivity associated with the integer quantum Hall effect reveal a large enhancement of the electronic g-factor, caused by the electron-electron interaction. A similar enhancement is observed in the Landau level separation. The magnetic field dependences of both effects are influenced by sample disorder. The activation data are analysed using three models for the shape of the extended state regions of disorder -broadened Landau levels. Only a small fraction of the electrons are found to occupy extended states. Values of the minimum metallic conductivity of electrons in broadened Landau levels are sample- and electron concentration-dependent. The fractional quantum Hall effect is a property of electrons in an incompressible quantum fluid state. The highest quality samples with low electron concentrations exhibit the effect in the manner predicted by simple theories involving spinless electrons. However, the influence of spin becomes apparent at higher electron concentrations, and in tilted field experiments. The effects of disorder are evident in measurements of the quasiparticle energy gap associated with the fractional quantum Hall effect. The experimental gap energies reported in this thesis are considerably smaller than those of theoretical studies, and they tend to zero at a non-zero magnetic field threshold. Simple theories predict that the fractional quantum Hall effect occurs only at odd denominator fractional occupancies. This thesis reports the first observations of the even denominator fractional quantum Hall effect. Persistent photoconductivity is a useful tool for increasing the concentration of two-dimensional electrons in GaAs-AlGaAs heterojunctions. A new photodeexcitation effect is reported, and possible

  10. A Small Modular Laboratory Hall Effect Thruster

    NASA Astrophysics Data System (ADS)

    Lee, Ty Davis

    Electric propulsion technologies promise to revolutionize access to space, opening the door for mission concepts unfeasible by traditional propulsion methods alone. The Hall effect thruster is a relatively high thrust, moderate specific impulse electric propulsion device that belongs to the class of electrostatic thrusters. Hall effect thrusters benefit from an extensive flight history, and offer significant performance and cost advantages when compared to other forms of electric propulsion. Ongoing research on these devices includes the investigation of mechanisms that tend to decrease overall thruster efficiency, as well as the development of new techniques to extend operational lifetimes. This thesis is primarily concerned with the design and construction of a Small Modular Laboratory Hall Effect Thruster (SMLHET), and its operation on argon propellant gas. Particular attention was addressed at low-cost, modular design principles, that would facilitate simple replacement and modification of key thruster parts such as the magnetic circuit and discharge channel. This capability is intended to facilitate future studies of device physics such as anomalous electron transport and magnetic shielding of the channel walls, that have an impact on thruster performance and life. Preliminary results demonstrate SMLHET running on argon in a manner characteristic of Hall effect thrusters, additionally a power balance method was utilized to estimate thruster performance. It is expected that future thruster studies utilizing heavier though more expensive gases like xenon or krypton, will observe increased efficiency and stability.

  11. Fractional Quantization of the Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-02-27

    The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.

  12. Multivariable scaling for the anomalous Hall effect.

    PubMed

    Hou, Dazhi; Su, Gang; Tian, Yuan; Jin, Xiaofeng; Yang, Shengyuan A; Niu, Qian

    2015-05-29

    We derive a general scaling relation for the anomalous Hall effect in ferromagnetic metals involving multiple competing scattering mechanisms, described by a quadratic hypersurface in the space spanned by the partial resistivities. We also present experimental findings, which show strong deviation from previously found scaling forms when different scattering mechanisms compete in strength but can be nicely explained by our theory.

  13. Improved Hall-Effect Sensors For Magnetic Memories

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.; Chen, Y. C.; Bhattacharya, Pallab K.

    1993-01-01

    High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.

  14. High temperature Hall measurement setup for thin film characterization

    NASA Astrophysics Data System (ADS)

    Adnane, L.; Gokirmak, A.; Silva, H.

    2016-07-01

    Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ˜500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant "up," zero, and "down" magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.

  15. High temperature Hall measurement setup for thin film characterization.

    PubMed

    Adnane, L; Gokirmak, A; Silva, H

    2016-07-01

    Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ∼500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant "up," zero, and "down" magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement. PMID:27475605

  16. Spin Hall effect on a noncommutative space

    SciTech Connect

    Ma Kai; Dulat, Sayipjamal

    2011-07-15

    We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V{sub 1}(r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, {sigma}={rho}{theta} ({rho} is the electron concentration, {theta} is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

  17. Improved Readout For Micromagnet/Hall-Effect Memories

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1993-01-01

    Two improved readout circuits for micromagnet/Hall-effect random-access memories designed to eliminate current shunts introducing errors into outputs of older readout circuits. Incorporate additional switching transistors to isolate Hall sensors as needed.

  18. Destruction of the Fractional Quantum Hall Effect by Disorder

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1985-07-01

    It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

  19. Effects of Various Residence Hall Administrative Structures on Students

    ERIC Educational Resources Information Center

    Gifford, Brian M.

    1974-01-01

    This study was designed to determine the effect of three types of residence hall administrative structures on students' perceptions of their environment, residence hall dropout rate, students' grade point averages, noise level, and residence hall damage at the University of Missouri - Columbia campus. (Author)

  20. Developments in the quantum Hall effect.

    PubMed

    von Klitzing, Klaus

    2005-09-15

    The most important applications of the quantum Hall effect (QHE) are in the field of metrology. The observed quantization of the resistance is primarily used for the reproduction of the SI unit ohm, but is also important for high precision measurements of both the fine structure constant and the Planck constant. Some current QHE research areas include the analysis of new electron-electron correlation phenomena and the development of a more complete microscopic picture of this quantum effect. Recently, scanning force microscopy (SFM) of the potential distribution in QHE devices has been used to enhance the microscopic understanding of current flow in quantum Hall systems. This confirms the importance of the theoretically predicted stripes of compressible and incompressible electronic states close to the boundary of the QHE devices.

  1. Multipole expansion in the quantum hall effect

    NASA Astrophysics Data System (ADS)

    Cappelli, Andrea; Randellini, Enrico

    2016-03-01

    The effective action for low-energy excitations of Laughlin's states is obtained by systematic expansion in inverse powers of the magnetic field. It is based on the W- infinity symmetry of quantum incompressible fluids and the associated higher-spin fields. Besides reproducing the Wen and Wen-Zee actions and the Hall viscosity, this approach further indicates that the low-energy excitations are extended objects with dipolar and multipolar moments.

  2. Extrinsic spin Hall effect induced by iridium impurities in copper.

    PubMed

    Niimi, Y; Morota, M; Wei, D H; Deranlot, C; Basletic, M; Hamzic, A; Fert, A; Otani, Y

    2011-03-25

    We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, (2.1±0.6)% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

  3. Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

    NASA Astrophysics Data System (ADS)

    Niimi, Y.; Morota, M.; Wei, D. H.; Deranlot, C.; Basletic, M.; Hamzic, A.; Fert, A.; Otani, Y.

    2011-03-01

    We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, (2.1±0.6)% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

  4. Generic superweak chaos induced by Hall effect.

    PubMed

    Ben-Harush, Moti; Dana, Itzhack

    2016-05-01

    We introduce and study the "kicked Hall system" (KHS), i.e., charged particles periodically kicked in the presence of uniform magnetic (B) and electric (E) fields that are perpendicular to each other and to the kicking direction. We show that for resonant values of B and E and in the weak-chaos regime of sufficiently small nonintegrability parameter κ (the kicking strength), there exists a generic family of periodic kicking potentials for which the Hall effect from B and E significantly suppresses the weak chaos, replacing it by "superweak" chaos (SWC). This means that the system behaves as if the kicking strength were κ^{2} rather than κ. For E=0, SWC is known to be a classical fingerprint of quantum antiresonance, but it occurs under much less generic conditions, in particular only for very special kicking potentials. Manifestations of SWC are a decrease in the instability of periodic orbits and a narrowing of the chaotic layers, relative to the ordinary weak-chaos case. Also, for global SWC, taking place on an infinite "stochastic web" in phase space, the chaotic diffusion on the web is much slower than the weak-chaos one. Thus, the Hall effect can be relatively stabilizing for small κ. In some special cases, the effect is shown to cause ballistic motion for almost all parameter values. The generic global SWC on stochastic webs in the KHS appears to be the two-dimensional closest analog to the Arnol'd web in higher dimensional systems. PMID:27300880

  5. Generic superweak chaos induced by Hall effect

    NASA Astrophysics Data System (ADS)

    Ben-Harush, Moti; Dana, Itzhack

    2016-05-01

    We introduce and study the "kicked Hall system" (KHS), i.e., charged particles periodically kicked in the presence of uniform magnetic (B ) and electric (E ) fields that are perpendicular to each other and to the kicking direction. We show that for resonant values of B and E and in the weak-chaos regime of sufficiently small nonintegrability parameter κ (the kicking strength), there exists a generic family of periodic kicking potentials for which the Hall effect from B and E significantly suppresses the weak chaos, replacing it by "superweak" chaos (SWC). This means that the system behaves as if the kicking strength were κ2 rather than κ . For E =0 , SWC is known to be a classical fingerprint of quantum antiresonance, but it occurs under much less generic conditions, in particular only for very special kicking potentials. Manifestations of SWC are a decrease in the instability of periodic orbits and a narrowing of the chaotic layers, relative to the ordinary weak-chaos case. Also, for global SWC, taking place on an infinite "stochastic web" in phase space, the chaotic diffusion on the web is much slower than the weak-chaos one. Thus, the Hall effect can be relatively stabilizing for small κ . In some special cases, the effect is shown to cause ballistic motion for almost all parameter values. The generic global SWC on stochastic webs in the KHS appears to be the two-dimensional closest analog to the Arnol'd web in higher dimensional systems.

  6. Anomalous Hall effect in Weyl superconductors

    NASA Astrophysics Data System (ADS)

    Bednik, G.; Zyuzin, A. A.; Burkov, A. A.

    2016-08-01

    We present a theory of the anomalous Hall effect in a topological Weyl superconductor with broken time reversal symmetry. Specifically, we consider a ferromagnetic Weyl metal with two Weyl nodes of opposite chirality near the Fermi energy. In the presence of inversion symmetry, such a metal experiences a weak-coupling Bardeen-Cooper-Schrieffer instability, with pairing of parity-related eigenstates. Due to the nonzero topological charge, carried by the Weyl nodes, such a superconductor is necessarily topologically nontrivial, with Majorana surface states coexisting with the Fermi arcs of the normal Weyl metal. We demonstrate that, surprisingly, the anomalous Hall conductivity of such a superconducting Weyl metal coincides with that of a nonsuperconducting one, under certain conditions, in spite of the nonconservation of charge in a superconductor. We relate this to the existence of an extra (nearly) conserved quantity in a Weyl metal, the chiral charge.

  7. Integer quantum Hall effect and correlated disorder

    SciTech Connect

    Greshnov, A. A. Zegrya, G. G.

    2007-11-15

    The effect of the form of the random potential of impurities and defects on the longitudinal {sigma}{sub xx} and Hall {sigma}{sub xy} components of conductivity in the mode of the integer quantum Hall effect is theoretically investigated. It is shown that the width of the Hall conductivity plateau as well as the peak values of the longitudinal conductivity heavily depend on the ratio {lambda}/a{sub H} between the random potential correlation length and the magnetic length. For the first time, it is established that in the case of the short-wavelength potential {lambda} << a{sub H}, the peak values of {sigma}{sub xx}{sup (N)} are directly proportional to the Landau level number N {>=} 1, {sigma}{sub xx} = 0.5Ne{sup 2}/h, whereas the peak values of {sigma}{sub xx}{sup (N)} are independent of the Landau level number in the case of the long-wavelength potential {lambda} >> a{sub H}, and their magnitude is much lower than 0.5e{sup 2}/h. The obtained results are in good agreement with the available experimental data.

  8. Mode Transitions in Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Sekerak, Michael J.; Longmier, Benjamin W.; Gallimore, Alec D.; Brown, Daniel L.; Hofer, Richard R.; Polk, James E.

    2013-01-01

    Mode transitions have been commonly observed in Hall Effect Thruster (HET) operation where a small change in a thruster operating parameter such as discharge voltage, magnetic field or mass flow rate causes the thruster discharge current mean value and oscillation amplitude to increase significantly. Mode transitions in a 6-kW-class HET called the H6 are induced by varying the magnetic field intensity while holding all other operating parameters constant and measurements are acquired with ion saturation probes and ultra-fast imaging. Global and local oscillation modes are identified. In the global mode, the entire discharge channel oscillates in unison and azimuthal perturbations (spokes) are either absent or negligible. Downstream azimuthally spaced probes show no signal delay between each other and are very well correlated to the discharge current signal. In the local mode, signals from the azimuthally spaced probes exhibit a clear delay indicating the passage of "spokes" and are not well correlated to the discharge current. These spokes are localized oscillations propagating in the ExB direction that are typically 10-20% of the mean value. In contrast, the oscillations in the global mode can be 100% of the mean value. The transition between global and local modes occurs at higher relative magnetic field strengths for higher mass flow rates or higher discharge voltages. The thrust is constant through mode transition but the thrust-to-power decreased by 25% due to increasing discharge current. The plume shows significant differences between modes with the global mode significantly brighter in the channel and the near-field plasma plume as well as exhibiting a luminous spike on thruster centerline. Mode transitions provide valuable insight to thruster operation and suggest improved methods for thruster performance characterization.

  9. Hall Effect Measured Using a Waveguide Tee

    NASA Astrophysics Data System (ADS)

    Coppock, Joyce; Anderson, James; Johnson, William

    2013-03-01

    We describe a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample, unlike the Van der Pauw method.[1] Our method consists of placing the semiconductor wafer into a slot cut in an X-band waveguide tee and placing the tee in the center of an electromagnet. The next step is to inject power into two arms of the tee and to balance the output so that no power comes out of the third arm of the tee at zero magnetic field. Application of a nonzero magnetic field gives a Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. We use a network analyzer to measure the ratio of the Hall signal to the input power. This method yields the semiconductor mobility in the wafer, which we can compare for calibration purposes with mobility data from our Van der Pauw measurements. This talk presents data for silicon and germanium samples doped with boron or phosphorus. Preliminary measurements on doped III-V semiconductor samples will also be presented.

  10. A Magnetic Balance with Hall Effect Sensors

    NASA Astrophysics Data System (ADS)

    Sawada, Hideo; Kunimasu, Tetsuya; Suda, Shinichi; Mizoguti, Yasushi; Okada, Takumi

    Magnetic force acting on a model fixed at the center of the JAXA 60cm MSBS was measured with an industry manufactured balance system when MSBS control coil currents were varied. At the same time, magnetic field intensity was also measured with 11 Hall sensors, which were arranged around the MSBS test section. From relations between coil currents and its corresponding controlled magnetic forces, regressive curves were given and maximum deviation from the curves was evaluated. From relations between Hall sensor outputs and the magnetic forces, regressive curves and deviation were also obtained. Obtained results show Hall sensor outputs are much better indexes of balance than the coil currents. The maximum deviations were reduced to a half or one-third times as much as those evaluated using the control coil currents. However, when couples acting on the model are controlled, they are not effective to reduce hysteresis phenomenon in the relation. The deviation can be reduced by decreasing the range of calibration. Then, the error of the balance of the MSBS was reduced to about 1% of the calibration range.

  11. Quantized anomalous Hall effect in two-dimensional ferromagnets: quantum Hall effect in metals.

    PubMed

    Onoda, Masaru; Nagaosa, Naoto

    2003-05-23

    We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of the AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of sigma(xy) induced by the localization except for the few extended states carrying Chern numbers. Extensive numerical study on a model reveals that Pruisken's two-parameter scaling theory holds even when the system has no gap with the overlapping multibands and without the uniform magnetic field. Therefore, the condition for the quantized AHE is given only by the Hall conductivity sigma(xy) without the quantum correction, i.e., /sigma(xy)/>e(2)/(2h).

  12. Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments

    NASA Astrophysics Data System (ADS)

    Kim, Sang-Il; Kim, Dong-Jun; Seo, Min-Su; Park, Byong-Guk; Park, Seung-Young

    2015-05-01

    The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE011 resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage VISHE for the stacking order of the bilayer can separate the pure VISHE and the anomalous Hall effect (AHE) voltage VAHE utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θISH, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θISH values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable VISHE value in bilayer systems are large θISH and low resistivity.

  13. Nonequilibrium spin polarization induced charge Hall effect

    NASA Astrophysics Data System (ADS)

    Hou, Dazhi; Qiu, Z.; Iguchi, R.; Sato, K.; Uchida, K.; Bauer, G. W.; Saitoh, Eiji

    2015-03-01

    The nonequilibrium spin polarization lies at the heart of information processing in spin-based devices. The generation and manipulation of the spin polarization have been realized by various approaches, however, the spin polarization is usually considered to have negligible effect on the electric transport property, especially for systems of high electron concentration like metals (ɛF ~ eV). Here we show that the nonequilibrium spin polarization can cause a novel Hall voltage in a conventional metallic alloy at room temperature, which is due to a new mechanism and closely related to the spin Nernst effect.

  14. Excitons in the Fractional Quantum Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-09-01

    Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.

  15. Anomalous Hall effect in disordered multiband metals.

    PubMed

    Kovalev, Alexey A; Sinova, Jairo; Tserkovnyak, Yaroslav

    2010-07-16

    We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the AHE is expressed solely in terms of the material's electronic band structure. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the 2D Rashba and 3D ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.

  16. A Hall effect angle detector for solid-state NMR

    NASA Astrophysics Data System (ADS)

    Mamone, Salvatore; Dorsch, André; Johannessen, Ole G.; Naik, Manoj V.; Madhu, P. K.; Levitt, Malcolm H.

    2008-01-01

    We describe a new method for independent monitoring of the angle between the spinning axis and the magnetic field in solid-state NMR. A Hall effect magnetic flux sensor is fixed to the spinning housing, so that a change in the stator orientation leads to a change in the angle between the Hall plane and the static magnetic field. This leads to a change in the Hall voltage generated by the sensor when an electric current is passed through it. The Hall voltage may be measured externally by a precision voltmeter, allowing the spinning angle to be measured non-mechanically and independent of the NMR experiment. If the Hall sensor is mounted so that the magnetic field is approximately parallel to the Hall plane, the Hall voltage becomes highly sensitive to the stator orientation. The current angular accuracy is around 10 millidegrees. The precautions needed to achieve higher angular accuracy are described.

  17. A Hall effect angle detector for solid-state NMR.

    PubMed

    Mamone, Salvatore; Dorsch, André; Johannessen, Ole G; Naik, Manoj V; Madhu, P K; Levitt, Malcolm H

    2008-01-01

    We describe a new method for independent monitoring of the angle between the spinning axis and the magnetic field in solid-state NMR. A Hall effect magnetic flux sensor is fixed to the spinning housing, so that a change in the stator orientation leads to a change in the angle between the Hall plane and the static magnetic field. This leads to a change in the Hall voltage generated by the sensor when an electric current is passed through it. The Hall voltage may be measured externally by a precision voltmeter, allowing the spinning angle to be measured non-mechanically and independent of the NMR experiment. If the Hall sensor is mounted so that the magnetic field is approximately parallel to the Hall plane, the Hall voltage becomes highly sensitive to the stator orientation. The current angular accuracy is around 10 millidegrees. The precautions needed to achieve higher angular accuracy are described.

  18. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    PubMed

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-01-01

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions. PMID:27185665

  19. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators

    NASA Astrophysics Data System (ADS)

    Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser

    2016-05-01

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  20. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators

    PubMed Central

    Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser

    2016-01-01

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions. PMID:27185665

  1. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    PubMed

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-05-17

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  2. Faster Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

    1993-01-01

    Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

  3. Anomalous Hall effect in Weyl metals.

    PubMed

    Burkov, A A

    2014-10-31

    We present a theory of the anomalous Hall effect (AHE) in a doped Weyl semimetal, or Weyl metal, including both intrinsic and extrinsic (impurity scattering) contributions. We demonstrate that a Weyl metal is distinguished from an ordinary ferromagnetic metal by the absence of the extrinsic and the Fermi surface part of the intrinsic contributions to the AHE, as long as the Fermi energy is sufficiently close to the Weyl nodes. The AHE in a Weyl metal is thus shown to be a purely intrinsic, universal property, fully determined by the location of the Weyl nodes in the first Brillouin zone.

  4. Anomalous Hall Effect in a Kagome Ferromagnet

    NASA Astrophysics Data System (ADS)

    Ye, Linda; Wicker, Christina; Suzuki, Takehito; Checkelsky, Joseph; Joseph Checkelsky Team

    The ferromagnetic kagome lattice is theoretically known to possess topological band structures. We have synthesized large single crystals of a kagome ferromagnet Fe3Sn2 which orders ferromagnetically well above room temperature. We have studied the electrical and magnetic properties of these crystals over a broad temperature and magnetic field range. Both the scaling relation of anomalous Hall effect and anisotropic magnetic susceptibility show that the ferromagnetism of Fe3Sn2 is unconventional. We discuss these results in the context of magnetism in kagome systems and relevance to the predicted topological properties in this class of compounds. This research is supported by DMR-1231319.

  5. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  6. Inertial-Hall effect: the influence of rotation on the Hall conductivity

    NASA Astrophysics Data System (ADS)

    Brandão, Julio E.; Moraes, F.; Cunha, M. M.; Lima, Jonas R. F.; Filgueiras, C.

    Inertial effects play an important role in classical mechanics but have been largely overlooked in quantum mechanics. Nevertheless, the analogy between inertial forces on mass particles and electromagnetic forces on charged particles is not new. In this paper, we consider a rotating non-interacting planar two-dimensional electron gas with a perpendicular uniform magnetic field and investigate the effects of the rotation in the Hall conductivity. The rotation introduces a shift and a split in the Landau levels. As a consequence of the break of the degeneracy, the counting of the states fully occupied below the Fermi energy increases, tuning the Hall quantization steps. The rotation also changes the quantum Hall plateau widths. Additionally, we find the Hall quantization steps as a function of rotation at a fixed value of the magnetic field.

  7. Anomalous spin Hall effects in Dresselhaus (110) quantum wells

    NASA Astrophysics Data System (ADS)

    Liu, Ming-Hao; Chang, Ching-Ray

    2010-10-01

    Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation, even though there is no spin-orbit force due to Dresselhaus (110) coupling. A surprising feature of this spin Hall induction is that the spin accumulation sign does not change upon bias reversal. Contribution to the spin Hall accumulation from the spin Hall induction and the spin deviation due to intrinsic spin-orbit force as well as extrinsic spin scattering can be straightforwardly distinguished simply by reversing the bias. For the in-plane component, inclusion of a weak Rashba coupling leads to a new type of Sy intrinsic spin Hall effect solely due to spin-orbit-force-driven spin separation.

  8. Role of electrical field in quantum Hall effect of graphene

    NASA Astrophysics Data System (ADS)

    Luo, Ji

    2013-01-01

    The ballistic motion of carriers of graphene in an orthogonal electromagnetic field is investigated to explain quantum Hall effect of graphene under experimental conditions. With the electrical field, all electronic eigen-states have the same expectation value of the velocity operator, or classically, all carriers move in cycloid-like curves with the same average velocity. This velocity is the origin of the Hall conductance and its magnitude is just appropriate so that the quantized Hall conductance is exactly independent of the external field. Electrical field changes each Landau level into a bundle of energies. Hall conductance plateaus occur in small fields as bundle gaps exist and are destroyed in intermediate fields as bundles overlap. As the electrical field tends to the critical point, all bundles have the same width, and bundle gaps increase to infinity rapidly. As a result, saturation of the Hall conductance may be observed. Electrical field thus demonstrates nonlinear effects on the Hall conductance.

  9. Topological honeycomb magnon Hall effect: A calculation of thermal Hall conductivity of magnetic spin excitations

    NASA Astrophysics Data System (ADS)

    Owerre, S. A.

    2016-07-01

    Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κxy changes sign as a function of magnetic field or temperature on the kagome lattice, and κxy changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κxy has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T2 law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.

  10. Linear magnetization dependence of the intrinsic anomalous Hall effect.

    PubMed

    Zeng, Changgan; Yao, Yugui; Niu, Qian; Weitering, Hanno H

    2006-01-27

    The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about approximately 240 K (0.8TC).

  11. Hall Effect Measured Using a Waveguide Tee

    NASA Astrophysics Data System (ADS)

    Coppock, Joyce; Anderson, James; Johnson, William

    2014-03-01

    We describe a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band waveguide tee, which lies in the center of an electromagnet, injecting power into the two opposing arms of the tee, and measuring the output at the third arm. Application of a magnetic field gives a Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. This method yields the semiconductor mobility, which we can compare for calibration purposes with mobility data from direct-current (Van der Pauw1) measurements. We are in the process of modeling the system using a finite-difference time-domain (FDTD) simulation to better understand the behavior of the electric fields inside the sample. Resistivity data is obtained by measuring the microwave reflection coefficient of the sample. This talk presents data for silicon and germanium samples doped with boron or phosphorus. Measured mobilities ranged from 270-3000 cm2/V.s . 1L. J. van der Pauw, PhilipsResearchReports 13, 1 (1958)

  12. Gauge Physics of Spin Hall Effect

    PubMed Central

    Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-01-01

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of −, and Rashba heavy hole instead of −. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity. PMID:26689260

  13. Gauge Physics of Spin Hall Effect.

    PubMed

    Tan, Seng Ghee; Jalil, Mansoor B A; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-12-22

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be [formula in text] instead of [formula in text], and Rashba heavy hole [formula in text] instead of [formula in text]. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity.

  14. Gauge Physics of Spin Hall Effect

    NASA Astrophysics Data System (ADS)

    Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-12-01

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of -, and Rashba heavy hole instead of -. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity.

  15. Hall effect in a moving liquid

    NASA Astrophysics Data System (ADS)

    Di Lieto, Alberto; Giuliano, Alessia; Maccarrone, Francesco; Paffuti, Giampiero

    2012-01-01

    A simple experiment, suitable for performing in an undergraduate physics laboratory, illustrates electromagnetic induction through the water entering into a cylindrical rubber tube by detecting the voltage developed across the tube in the direction transverse both to the flow velocity and to the magnetic field. The apparatus is a very simple example of an electromagnetic flowmeter, a device which is commonly used both in industrial and physiological techniques. The phenomenology observed is similar to that of the Hall effect in the absence of an electric current in the direction of motion of the carriers. The experimental results show a dependence on the intensity of the magnetic field and on the carrier velocity, in good agreement with the theory. Discussion of the system, based on classical electromagnetism, indicates that the effect depends only on the flow rate, and is independent both of the velocity profile and of the electrical conductivity of the medium.

  16. Useful Pedagogical Applications of the Classical Hall Effect

    ERIC Educational Resources Information Center

    Houari, Ahmed

    2007-01-01

    One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

  17. Hall-Effect Thruster Utilizing Bismuth as Propellant

    NASA Technical Reports Server (NTRS)

    Szabo, James; Gasdaska, Charles; Hruby, Vlad; Robin, Mike

    2008-01-01

    A laboratory-model Hall-effect spacecraft thruster was developed that utilizes bismuth as the propellant. Xenon was used in most prior Hall-effect thrusters. Bismuth is an attractive alternative because it has a larger atomic mass, a larger electron-impact-ionization cross-section, and is cheaper and more plentiful.

  18. Anomalous resistance overshoot in the integer quantum Hall effect

    PubMed Central

    Kendirlik, E. M.; Sirt, S.; Kalkan, S. B.; Dietsche, W.; Wegscheider, W.; Ludwig, S.; Siddiki, A.

    2013-01-01

    In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels. PMID:24190162

  19. Anomalous resistance overshoot in the integer quantum Hall effect.

    PubMed

    Kendirlik, E M; Sirt, S; Kalkan, S B; Dietsche, W; Wegscheider, W; Ludwig, S; Siddiki, A

    2013-01-01

    In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.

  20. Mesoscopic spin Hall effect in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Zarbo, Liviu

    The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

  1. Photonic spin Hall effect at metasurfaces.

    PubMed

    Yin, Xiaobo; Ye, Ziliang; Rho, Junsuk; Wang, Yuan; Zhang, Xiang

    2013-03-22

    The spin Hall effect (SHE) of light is very weak because of the extremely small photon momentum and spin-orbit interaction. Here, we report a strong photonic SHE resulting in a measured large splitting of polarized light at metasurfaces. The rapidly varying phase discontinuities along a metasurface, breaking the axial symmetry of the system, enable the direct observation of large transverse motion of circularly polarized light, even at normal incidence. The strong spin-orbit interaction deviates the polarized light from the trajectory prescribed by the ordinary Fermat principle. Such a strong and broadband photonic SHE may provide a route for exploiting the spin and orbit angular momentum of light for information processing and communication.

  2. Magnetic circuit for hall effect plasma accelerator

    NASA Technical Reports Server (NTRS)

    Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Jankovsky, Robert S. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor)

    2009-01-01

    A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.

  3. Cathode Effects in Cylindrical Hall Thrusters

    SciTech Connect

    Granstedt, E.M.; Raitses, Y.; Fisch, N. J.

    2008-09-12

    Stable operation of a cylindrical Hall thruster (CHT) has been achieved using a hot wire cathode, which functions as a controllable electron emission source. It is shown that as the electron emission from the cathode increases with wire heating, the discharge current increases, the plasma plume angle reduces, and the ion energy distribution function shifts toward higher energies. The observed effect of cathode electron emission on thruster parameters extends and clarifies performance improvements previously obtained for the overrun discharge current regime of the same type of thruster, but using a hollow cathode-neutralizer. Once thruster discharge current saturates with wire heating, further filament heating does not affect other discharge parameters. The saturated values of thruster discharge parameters can be further enhanced by optimal placement of the cathode wire with respect to the magnetic field.

  4. Quantized topological Hall effect in skyrmion crystal

    NASA Astrophysics Data System (ADS)

    Hamamoto, Keita; Ezawa, Motohiko; Nagaosa, Naoto

    2015-09-01

    We theoretically study the quantized topological Hall effect (QTHE) in skyrmion crystal (SkX) without external magnetic field. The emergent magnetic field in SkX could be gigantic, as much as 4000 T , when its lattice constant is 1 nm . The band structure is not flat but has a finite gap in the low electron-density regime. We also study the conditions to realize the QTHE for the skyrmion size, carrier density, disorder strength, and temperature. Comparing the SkX and the system under the corresponding uniform magnetic field, the former is more fragile against the temperature compared with the latter since the gap is reduced by a factor of 1/5, while they are almost equally robust against the disorder. Therefore, it is expected that the QTHE of the SkX system is realized even with strong disorder at room temperature when the electron density is of the order of 1 per skyrmion.

  5. Anomalous Hall effect in YIG|Pt bilayers

    SciTech Connect

    Meyer, Sibylle Schlitz, Richard; Geprägs, Stephan; Opel, Matthias; Huebl, Hans; Goennenwein, Sebastian T. B.; Gross, Rudolf

    2015-03-30

    We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet|platinum (YIG|Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall effect like voltage in Pt, which is sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing conductance G{sub i} plays a crucial role in YIG|Pt bilayers. In particular, our data suggest a sign change in G{sub i} between 10 K and 300 K. Additionally, we report a higher order Hall effect contribution, which appears in thin Pt films on YIG at low temperatures.

  6. Optical Emission Characterization of High-Power Hall Thruster Wear

    NASA Technical Reports Server (NTRS)

    WIlliams, George J.; Kamhawi, Hani

    2013-01-01

    Optical emission spectroscopy is employed to correlate BN insulator erosion with high-power operation of the NASA 300M Hall-effect thruster. Actinometry leveraging excited xenon states is used to normalize the emission spectra of ground state boron as a function of thruster operating condition. Trends in the strength of the boron signal are correlated with thruster power, discharge voltage, discharge current and magnetic field strength. The boron signals are shown to trend with discharge current and show weak dependence on discharge voltage. The trends are consistent with data previously collected on the NASA 300M and NASA 457M thrusters but are different from conventional wisdom.

  7. Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments

    SciTech Connect

    Kim, Sang-Il; Seo, Min-Su; Park, Seung-Young; Kim, Dong-Jun; Park, Byong-Guk

    2015-05-07

    The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE{sub 011} resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage V{sub ISHE} for the stacking order of the bilayer can separate the pure V{sub ISHE} and the anomalous Hall effect (AHE) voltage V{sub AHE} utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θ{sub ISH}, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θ{sub ISH} values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable V{sub ISHE} value in bilayer systems are large θ{sub ISH} and low resistivity.

  8. Topological insulators in silicene: Quantum hall, quantum spin hall and quantum anomalous hall effects

    SciTech Connect

    Ezawa, Motohiko

    2013-12-04

    Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice, which shares almost every remarkable property with graphene. The low energy dynamics is described by Dirac electrons, but they are massive due to relatively large spin-orbit interactions. I will explain the following properties of silicene: 1) The band structure is controllable by applying an electric field. 2) Silicene undergoes a phase transition from a topological insulator to a band insulator by applying external electric field. 3) The topological phase transition can be detected experimentally by way of diamagnetism. 4) There is a novel valley-spin selection rules revealed by way of photon absorption. 5) Silicene yields a remarkably many phases such as quantum anomalous Hall phase and valley polarized metal when the exchange field is additionally introduced. 6) A silicon nanotubes can be used to convey spin currents under an electric field.

  9. High temperature hall effect measurement system design, measurement and analysis

    NASA Astrophysics Data System (ADS)

    Berkun, Isil

    A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non

  10. Energy magnetization and the thermal Hall effect.

    PubMed

    Qin, Tao; Niu, Qian; Shi, Junren

    2011-12-01

    We obtain a set of general formulas for determining magnetizations, including the usual electromagnetic magnetization as well as the gravitomagnetic energy magnetization. The magnetization corrections to the thermal transport coefficients are explicitly demonstrated. Our theory provides a systematic approach for properly evaluating the thermal transport coefficients of magnetic systems, eliminating the unphysical divergence from the direct application of the Kubo formula. For a noninteracting anomalous Hall system, the corrected thermal Hall conductivity obeys the Wiedemann-Franz law.

  11. Integer quantum Hall effect for bosons.

    PubMed

    Senthil, T; Levin, Michael

    2013-01-25

    A simple physical realization of an integer quantum Hall state of interacting two dimensional bosons is provided. This is an example of a symmetry-protected topological (SPT) phase which is a generalization of the concept of topological insulators to systems of interacting bosons or fermions. Universal physical properties of the boson integer quantum Hall state are described and shown to correspond with those expected from general classifications of SPT phases.

  12. Unconventional quantum Hall effect in Floquet topological insulators.

    PubMed

    Tahir, M; Vasilopoulos, P; Schwingenschlögl, U

    2016-09-28

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text].

  13. Unconventional quantum Hall effect in Floquet topological insulators.

    PubMed

    Tahir, M; Vasilopoulos, P; Schwingenschlögl, U

    2016-09-28

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text]. PMID:27460419

  14. Unconventional quantum Hall effect in Floquet topological insulators

    NASA Astrophysics Data System (ADS)

    Tahir, M.; Vasilopoulos, P.; Schwingenschlögl, U.

    2016-09-01

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light’s polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity {σyx}=0 at zero Fermi energy, to a Hall insulator state with {σyx}={{e}2}/2h . These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (+/- 1/2,+/- 3/2,+/- 5/2,...){{e}2}/h .

  15. Fractional quantum Hall effect in a tilted magnetic field

    NASA Astrophysics Data System (ADS)

    Papić, Z.

    2013-06-01

    We discuss the orbital effect of a tilted magnetic field on the quantum Hall effect in parabolic quantum wells. Many-body states realized at the fractional (1)/(3) and (1)/(2) filling of the second electronic subband are studied using finite-size exact diagonalization. In both cases, we obtain the phase diagram consisting of a fractional quantum Hall fluid phase that persists for moderate tilts, and eventually undergoes a direct transition to the stripe phase. It is shown that tilting of the field probes the geometrical degree of freedom of fractional quantum Hall fluids, and can be partly related to the effect of band-mass anisotropy.

  16. Properties of the photonic Hall effect in cold atomic clouds.

    PubMed

    Grémaud, Benoît; Delande, Dominique; Sigwarth, Olivier; Miniatura, Christian

    2009-05-29

    On the basis of exact numerical simulations and analytical calculations, we describe qualitatively and quantitatively the interference processes at the origin of the photonic Hall effect for resonant Rayleigh (point-dipole) scatterers in a magnetic field. For resonant incoming light, the induced giant magneto-optical effects result, even for magnetic field strength as low as a few mT, in relative Hall currents in the percent range. This suggests that the observation of the photonic Hall effect in cold atomic vapors is within experimental reach.

  17. Topological Hall effect and Berry phase in magnetic nanostructures.

    PubMed

    Bruno, P; Dugaev, V K; Taillefumier, M

    2004-08-27

    We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect does not require any spin-orbit coupling and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows one to observe unambiguously the topological Hall effect and to distinguish it from other mechanisms. PMID:15447127

  18. Magnet/Hall-Effect Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

  19. Giant Room Temperature Interface Spin Hall and Inverse Spin Hall Effects

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Wesselink, R. J. H.; Liu, Yi; Yuan, Zhe; Xia, Ke; Kelly, Paul J.

    2016-05-01

    The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt |Py (Py =Ni80Fe20 ) bilayer using a first-principles scattering approach, we find a SHA that increases monotonically with temperature and is proportional to the resistivity for bulk Pt. By decomposing the room temperature SHE and inverse SHE currents into bulk and interface terms, we discover a giant interface SHA that dominates the total inverse SHE current with potentially major consequences for applications.

  20. Gauge Physics of Spin Hall Effect.

    PubMed

    Tan, Seng Ghee; Jalil, Mansoor B A; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-01-01

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be [formula in text] instead of [formula in text], and Rashba heavy hole [formula in text] instead of [formula in text]. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity. PMID:26689260

  1. Quantum Spin Hall Effect in Ultrasonic Metamaterials

    NASA Astrophysics Data System (ADS)

    Mousavi, S. Hossein; Khanikaev, Alexander B.; Wang, Zheng

    2015-03-01

    The discovery of topological order without breaking time-reversal symmetry, such as that in Quantum Spin Hall (QSH) effect and Topological Insulators, is one of the most groundbreaking advancements of recent years in condensed matters physics. The approach to topological order without breaking time-reversal symmetry is particularly important in elastics because no natural elastic materials show linear nonreciprocal response. Here we illustrate the first elastic-wave system emulating QSH effect and demonstrate existence of topologically protected elastic edge states. The system represents an elastic metamaterial-based phononic crystal. In this crystal, we achieved degenerate linear dispersion for two sets of modes, classified by one of the system's symmetries. Then, by relaxing and removing that symmetry by deliberately engineering a gauge field emulating a strong spin-orbit coupling of QSH, we observe opening a complete topological bandgap. Finally, the hallmark of the topological order, namely the presence of one-way chiral edge waves insensitive to nonmagnetic defects and disorders, is demonstrated in such elastic metacrystals. We illustrate the unique property of these elastic edge waves to flow around sharp corners without back-reflection or localization.

  2. Hall effect measurements on InAs nanowires

    SciTech Connect

    Bloemers, Ch.; Grap, T.; Lepsa, M. I.; Moers, J.; Gruetzmacher, D.; Lueth, H.; Trellenkamp, St.; Schaepers, Th.

    2012-10-08

    We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

  3. Hall-Effect Current Sensors For Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Rippel, Wally E.

    1989-01-01

    Built-in devices measure direct or alternating currents. Hall-effect sensors placed near constriction in conductor strip. Differential configuration reduces effects of stray magnetic fields, nonlinearities, and changes in temperature. Preliminary design studies and experiments with macroscopic commercial Hall-effect sensors conducted to assess feasibility, limitations, and need for further research and development of this concept. Potential applications include programmable power supplies and protective circuitry.

  4. Observing the Quantum Spin Hall Effect with Ultracold Atoms

    NASA Astrophysics Data System (ADS)

    Vaishnav, J. Y.; Stanescu, Tudor D.; Clark, Charles W.; Galitski, Victor

    2009-03-01

    The quantum spin Hall (QSH) state is a topologically nontrivial state of matter proposed to exist in certain 2-D systems with spin-orbit coupling. While the electronic states of a QSH insulator are gapped in the bulk, a QSH insulator is characterized by gapless edge states of different spins which counterpropagate at a given edge; the spin is correlated with the direction of propagation. Recent proposals ootnotetextT. D. Stanescu, C. Zhang, V. Galitski, Physical Review Letters 99, 110403 (2007), J. Y. Vaishnav, Charles W. Clark, Physical Review Letters 100, 153002 (2008). suggest that synthetic spin-orbit couplings can be created for cold atoms moving in spatially varying light fields. Here, we identify an optical lattice setup which generates an effective QSH effect for cold, multilevel atoms. We also discuss methods for experimental detection of the atomic QSH effect.

  5. Hall Effect and Magneto Optical MFL Sensing

    NASA Astrophysics Data System (ADS)

    Jallouli, Wissem

    The need for a reliable sensing tool has stimulated countless researchers to develop techniques trying to extract maximum information. In the field of nondestructive testing (NDT), various sensors have been established to fulfill that function. Examples include the ultrasonic, eddy current, and magnetic flux leakage (MFL) based techniques. Because they are extremely reliable, MFL based techniques represent one of the best inspection technologies. These technologies have numerous applications in diverse domains, including petroleum pipeline and tank inspections, airplane inspections, and production quality control. In this work, we will present two technologies based on MFL technique. The first is the Hall Effect sensor. This device has been extensively developed during the last century, especially after the use of integrated circuit technology. Its reliable results even under extreme conditions made it an extremely useful tool. The second technology is Magneto Optical Imaging. This technique rose very recently, and scientists hold high expectations about its performance once proper techniques are developed. The study of these two sensing devices gives a better understanding of the MFL technique by allowing us to investigate the potential of each technology, experience each in studied conditions to derive its characteristics, and discuss its performance.

  6. The Theory of the Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Shrivastava, Keshav N.

    2008-05-01

    Laughlin's theory of fractional charges is worked out in detail for small charges from 1/3 till 1/101. There is a small deviation between computed values and those obtained from the closed form expression. The ground state energy crosses that of the charge-density waves. We develop a theory of fractional charges by using the quantum mechanics of angular momentum. We find that fractional charges can be expressed in terms of spin and the values of charges 0, 1, 1/3, 2/3, 2/5, 3/5, …, are produced. The angular momenta eigen values when subjected to flux quantization, yield plateaus of energies which are independent of the magnetic field. In this way we are able to predict that charges of ±2e, ±6e, ±10e, ±14e, …, are produced. The higher order term in the flux quantization also produces quasiparticles of charges of ±4e. These calculated values of the charges are the same as those found in the experimental data of quantum Hall effect in graphene, which is a mono-atomic layer of carbon. Since the charge of the quasiparticles appears in the resistivity and there is a strong need of the electron spin to predict these charges, spin-charge coupling occurs in a natural way.

  7. Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

    SciTech Connect

    Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo

    2015-02-14

    We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

  8. Emergence of integer quantum Hall effect from chaos

    NASA Astrophysics Data System (ADS)

    Tian, Chushun; Chen, Yu; Wang, Jiao

    2016-02-01

    We present an analytic microscopic theory showing that in a large class of spin-1/2 quasiperiodic quantum kicked rotors, a dynamical analog of the integer quantum Hall effect (IQHE) emerges from an intrinsic chaotic structure. Specifically, the inverse of the Planck's quantum (he) and the rotor's energy growth rate mimic the "filling fraction" and the "longitudinal conductivity" in conventional IQHE, respectively, and a hidden quantum number is found to mimic the "quantized Hall conductivity." We show that for an infinite discrete set of critical values of he, the long-time energy growth rate is universal and of order of unity ("metallic" phase), but otherwise vanishes ("insulating" phase). Moreover, the rotor insulating phases are topological, each of which is characterized by a hidden quantum number. This number exhibits universal behavior for small he, i.e., it jumps by unity whenever he decreases, passing through each critical value. This intriguing phenomenon is not triggered by the likes of Landau band filling, well known to be the mechanism for conventional IQHE, and far beyond the canonical Thouless-Kohmoto-Nightingale-Nijs paradigm for quantum Hall transitions. Instead, this dynamical phenomenon is of strong chaos origin; it does not occur when the dynamics is (partially) regular. More precisely, we find that a topological object, similar to the topological theta angle in quantum chromodynamics, emerges from strongly chaotic motion at microscopic scales, and its renormalization gives the hidden quantum number. Our analytic results are confirmed by numerical simulations. Our findings indicate that rich topological quantum phenomena can emerge from chaos and might point to a new direction of study in the interdisciplinary area straddling chaotic dynamics and condensed matter physics. This work is a substantial extension of a short paper published earlier by two of us [Y. Chen and C. Tian, Phys. Rev. Lett. 113, 216802 (2014), 10.1103/PhysRevLett.113.216802].

  9. Enigmatic 12/5 fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Pakrouski, Kiryl; Troyer, Matthias; Wu, Yang-Le; Das Sarma, Sankar; Peterson, Michael R.

    2016-08-01

    We numerically study the fractional quantum Hall effect at filling factors ν =12 /5 and 13/5 (the particle-hole conjugate of 12/5) in high-quality two-dimensional GaAs heterostructures via exact diagonalization including finite well width and Landau-level mixing. We find that Landau-level mixing suppresses the ν =13 /5 fractional quantum Hall effect relative to ν =12 /5 . By contrast, we find both ν =2 /5 and (its particle-hole conjugate) ν =3 /5 fractional quantum Hall effects in the lowest Landau level to be robust under Landau-level mixing and finite well-width corrections. Our results provide a possible explanation for the experimental absence of the 13/5 fractional quantum Hall state as caused by Landau-level mixing effects.

  10. Fractional quantum Hall effect in the absence of Landau levels.

    PubMed

    Sheng, D N; Gu, Zheng-Cheng; Sun, Kai; Sheng, L

    2011-01-01

    It is well known that the topological phenomena with fractional excitations, the fractional quantum Hall effect, will emerge when electrons move in Landau levels. Here we show the theoretical discovery of the fractional quantum Hall effect in the absence of Landau levels in an interacting fermion model. The non-interacting part of our Hamiltonian is the recently proposed topologically non-trivial flat-band model on a checkerboard lattice. In the presence of nearest-neighbouring repulsion, we find that at 1/3 filling, the Fermi-liquid state is unstable towards the fractional quantum Hall effect. At 1/5 filling, however, a next-nearest-neighbouring repulsion is needed for the occurrence of the 1/5 fractional quantum Hall effect when nearest-neighbouring repulsion is not too strong. We demonstrate the characteristic features of these novel states and determine the corresponding phase diagram.

  11. Spin Hall and Spin Nernst effect from first principles

    NASA Astrophysics Data System (ADS)

    Mertig, Ingrid

    2013-03-01

    Spintronics without magnetic materials is an interesting alternative to the existing spintronics applications. The spin Hall effect creates spin currents in nonmagnetic materials and avoids the problem of spin injection. Future applications of the spin Hall effect require two properties of the materials, a large spin Hall angle and a long spin diffusion length. Ab intio calculations based on density functional theory are a powerful tool to design the desired materials and to get insight into the underlying microscopic processes. We investigated the spin Hall effect in dilute alloys, in particular the intrinsic effect based on the Berry curvature as well as side-jump and the skew-scattering contributions. The results demonstrate that a large extrinsic spin Hall effect is determined by the differences between host and impurity concerning the spin-orbit interaction. It can be caused by light p scatterers as C and N in Au. A comparable large effect is observed for heavy p scatterers as Bi in Cu. An alternative way is to deposit impurities in the adatom position. Furthermore, we predict a spin current perpendicular to a temperature gradient. The phenomenon is called spin Nernst effect. The predicted spin currents can be comparably large as in the case of the spin Hall effect.

  12. Nulling Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

    1993-01-01

    Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

  13. Is the quantum Hall effect influenced by the gravitational field?

    PubMed

    Hehl, Friedrich W; Obukhov, Yuri N; Rosenow, Bernd

    2004-08-27

    Most of the experiments on the quantum Hall effect (QHE) were made at approximately the same height above sea level. A future international comparison will determine whether the gravitational field g(x) influences the QHE. In the realm of (1+2)-dimensional phenomenological macroscopic electrodynamics, the Ohm-Hall law is metric independent ("topological"). This suggests that it does not couple to g(x). We corroborate this result by a microscopic calculation of the Hall conductance in the presence of a post-Newtonian gravitational field. PMID:15447125

  14. Spin Hall Effects Due to Phonon Skew Scattering

    NASA Astrophysics Data System (ADS)

    Gorini, Cosimo; Eckern, Ulrich; Raimondi, Roberto

    2015-08-01

    A diversity of spin Hall effects in metallic systems is known to rely on Mott skew scattering. In this work its high-temperature counterpart, phonon skew scattering, which is expected to be of foremost experimental relevance, is investigated. In particular, the phonon skew scattering spin Hall conductivity is found to be practically T independent for temperatures above the Debye temperature TD. As a consequence, in Rashba-like systems a high-T linear behavior of the spin Hall angle demonstrates the dominance of extrinsic spin-orbit scattering only if the intrinsic spin splitting is smaller than the temperature.

  15. Hall-Petch effect: Another manifestation of size effect

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Dunstan, David; Bushby, Andy

    In the 1950s, Hall and Petch first established a quantitative relationship, expressed by the famous Hall-Petch equation: σd =σ0 +kHP/√{ d} There is a very large body of experimental data in the literature reinforcing this dependence in a very wide range of metals. Recently, we presented some of the classic data sets which have been considered to confirm the Hall-Petch equation and showed they are equally well consistent with the equation ɛel (d) =ɛ0 +kln/(d) d Eq. 2 is based on critical thickness theory. Fitting to Eq.1 with the exponent 0.5 replaced by the free fitting parameter x, the confidence interval for the exponent is 0.5 Hall-Petch dependence of the strength on grain size, if it obeys Eq.2, is another manifestation of the size effect.

  16. Theory of the thermal Hall effect in quantum magnets.

    PubMed

    Katsura, Hosho; Nagaosa, Naoto; Lee, Patrick A

    2010-02-12

    We present a theory of the thermal Hall effect in insulating quantum magnets, where the heat current is totally carried by charge-neutral objects such as magnons and spinons. Two distinct types of thermal Hall responses are identified. For ordered magnets, the intrinsic thermal Hall effect for magnons arises when certain conditions are satisfied for the lattice geometry and the underlying magnetic order. The other type is allowed in a spin liquid which is a novel quantum state since there is no order even at zero temperature. For this case, the deconfined spinons contribute to the thermal Hall response due to Lorentz force. These results offer a clear experimental method to prove the existence of the deconfined spinons via a thermal transport phenomenon.

  17. Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect

    SciTech Connect

    Zeng, C.; Yao, Y.; Niu, Q.; Weitering, Harm H

    2006-01-01

    The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn{sub 5}Ge{sub 3}. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about -240 K (0.8T{sub c}).

  18. Detection of a History Dependent Topological Hall Effect Due to Skyrmion Formation in FeGe Thin Films

    NASA Astrophysics Data System (ADS)

    Gallagher, James; Page, Michael; Bhallamudi, Vidya; Brangham, Jack; Meng, Keng Yuan; Esser, Bryan; Wang, Hailong; McComb, Dave; Hammel, Chris; Yang, Fengyuan

    B20 phase crystal structures, such as FeGe and MnSi, have been of interest because they enable magnetic skyrmion phases, which can potentially lead to low energy cost spintronic device applications. We report the synthesis of pure phase FeGe epitaxial thin films grown on Si (111) substrates by ultra-high vacuum off-axis magnetron sputtering. The FeGe films were characterized by x-ray diffraction, scanning transmission electron microscopy (STEM) and Hall effect measurements. The topological Hall effect (THE) signals were extracted by subtracting out the anomalous Hall effect and ordinary Hall effect, demonstrating the existence of the skyrmion phase in FeGe films between 5 and 275 K. Topological hall effect was observed at zero field at all temperatures below the Curie temperature, showing the possibility of metastable skymion particles at zero field and high temperatures. We will also discuss the study of dynamics of the ferromagnetic phases using ferromagnetic resonance.

  19. Azimuthal Spoke Propagation in Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Sekerak, Michael J.; Longmier, Benjamin W.; Gallimore, Alec D.; Brown, Daniel L.; Hofer, Richard R.; Polk, James E.

    2013-01-01

    Spokes are azimuthally propagating perturbations in the plasma discharge of Hall Effect Thrusters (HETs) that travel in the E x B direction and have been observed in many different systems. The propagation of azimuthal spokes are investigated in a 6 kW HET known as the H6 using ultra-fast imaging and azimuthally spaced probes. A spoke surface is a 2-D plot of azimuthal light intensity evolution over time calculated from 87,500 frames/s videos. The spoke velocity has been determined using three methods with similar results: manual fitting of diagonal lines on the spoke surface, linear cross-correlation between azimuthal locations and an approximated dispersion relation. The spoke velocity for three discharge voltages (300, 400 and 450 V) and three anode mass flow rates (14.7, 19.5 and 25.2 mg/s) yielded spoke velocities between 1500 and 2200 m/s across a range of normalized magnetic field settings. The spoke velocity was inversely dependent on magnetic field strength for low B-field settings and asymptoted at B-field higher values. The velocities and frequencies are compared to standard drifts and plasma waves such as E x B drift, electrostatic ion cyclotron, magnetosonic and various drift waves. The empirically approximated dispersion relation yielded a characteristic velocity that matched the ion acoustic speed for 5 eV electrons that exist in the near-anode and near-field plume regions of the discharge channel based on internal measurements. Thruster performance has been linked to operating mode where thrust-to-power is maximized when azimuthal spokes are present so investigating the underlying mechanism of spokes will benefit thruster operation.

  20. Quantum Hall effect in bilayer system with array of antidots

    NASA Astrophysics Data System (ADS)

    Pagnossin, I. R.; Gusev, G. M.; Sotomayor, N. M.; Seabra, A. C.; Quivy, A. A.; Lamas, T. E.; Portal, J. C.

    2007-04-01

    We have studied the Quantum Hall effect in a bilayer system modulated by gate-controlled antidot lattice potential. The Hall resistance shows plateaus which are quantized to anomalous multiplies of h/e2. We suggest that this complex behavior is due to the nature of the edge-states in double quantum well (DQW) structures coupled to an array of antidots: these plateaus may be originated from the coexistence of normal and counter-rotating edge-states in different layers.

  1. Planar Hall effect sensor for magnetic micro- and nanobead detection

    NASA Astrophysics Data System (ADS)

    Ejsing, L.; Hansen, M. F.; Menon, A. K.; Ferreira, H. A.; Graham, D. L.; Freitas, P. P.

    2004-06-01

    Magnetic bead sensors based on the planar Hall effect in thin films of exchange-biased permalloy have been fabricated and characterized. Typical sensitivities are 3 μV/Oe mA. The sensor response to an applied magnetic field has been measured without and with coatings of commercially available 2 μm and 250 nm magnetic beads used for bioapplications (Micromer-M and Nanomag-D, Micromod, Germany). Detection of both types of beads and single bead detection of 2 μm beads is demonstrated, i.e., the technique is feasible for magnetic biosensors. Single 2 μm beads yield 300 nV signals at 10 mA and 15 Oe applied field.

  2. X Marks the Spot: Scanning for Magnetic Scientific Treasure Using Hall-Effect Sensors

    NASA Astrophysics Data System (ADS)

    Chu, Ricky; David, Nigel; Chouinard, Taras; Schneider, Adam; Broun, David

    2009-05-01

    Scanning Hall probe microscopy is a quantitative magnetic imaging technique that provides high spatial resolution combined with high flux sensitivity, occupying a unique niche in magnetic microscopy [S.J. Bending, Adv. Phys. 48, 449 (1999)]. Hall sensors are useful in studying materials with microscopic or nanoscale magnetic structures, like high temperature superconductors and magnetic thin films. Development of conventional semiconductor Hall sensors has stalled due to problems with charge depletion and thermal noise. Sandhu recently produced bismuth Hall probes in an effort to avoid these effects [A. Sandhu et al. Jpn. J. Appl. Phys. 40, L524 (2001)]. The bismuth probes lack a good model to optimize their performance. I will propose a refinement of the current model with an increased emphasis on material parameters that can be more intuitively manipulated. I will show that the fundamental limit of the Hall probe flux sensitivity is comparable to that of a SQUID, the most sensitive known magnetic sensor. I will also propose a definition for spatial resolution to standardize characterization procedures for Hall sensors.

  3. Tunable spin Hall effect by Stern-Gerlach diffraction

    NASA Astrophysics Data System (ADS)

    Lu, Jun-Qiang; Zhang, X.-G.; Pantelides, Sokrates T.

    2006-12-01

    We propose an effect based on simultaneous real- and reciprocal-space magnetic inhomogeneities, combining features of the Stern-Gerlach and both the intrinsic and extrinsic spin Hall effects. The known difficulties of directly observing the spin Hall effect are circumvented as spin currents generated from the effect are well-defined, dissipative, and detectable. Simulations of a specific system are used to illustrate wide tunability, allowing formation of a periodic “spin lattice” distinct from the “charge lattice,” selective polarization flipping, or spin current detection. Similar effects can be produced by photons and neutrons.

  4. Semiconductor spintronics: Tuning the spin Hall effect in Si

    NASA Astrophysics Data System (ADS)

    Tetlow, Holly; Gradhand, Martin

    2013-02-01

    A large spin Hall effect is calculated in doped silicon. The effect is determined using first principle calculations for the extrinsic spin Hall effect due to skew scattering at substitutional impurities. It is shown that the applied method accounts accurately for experimental results on B-doped Si. Here, the effect is weak but can be tuned significantly with heavy impurities. In the case of Si(Pt) and Si(Bi) a spin Hall angle is calculated comparable to those found in metals. Furthermore, the calculated spin relaxation times give physical insight to the different effect of electron and hole doping in Si. Experimentally, spin relaxation times for the electron-doped regime were found three orders of magnitude larger than for the hole-doped systems. Our calculations reproduce this finding which can be understood in terms of the electronic band structure of bulk Si.

  5. The microscopic nature of localization in the quantum Hall effect.

    PubMed

    Ilani, S; Martin, J; Teitelbaum, E; Smet, J H; Mahalu, D; Umansky, V; Yacoby, A

    2004-01-22

    The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties owing to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder.

  6. Optical detection of spin Hall effect in metals

    SciTech Connect

    Erve, O. M. J. van ‘t Hanbicki, A. T.; McCreary, K. M.; Li, C. H.; Jonker, B. T.

    2014-04-28

    Optical techniques have been widely used to probe the spin Hall effect in semiconductors. In metals, however, only electrical methods such as nonlocal spin valve transport, ferromagnetic resonance, or spin torque transfer experiments have been successful. These methods require complex processing techniques and measuring setups. We show here that the spin Hall effect can be observed in non-magnetic metals such as Pt and β-W, using a standard bench top magneto-optical Kerr system with very little sample preparation. Applying a square wave current and using Fourier analysis significantly improve our detection level. One can readily determine the angular dependence of the induced polarization on the bias current direction (very difficult to do with voltage detection), the orientation of the spin Hall induced polarization, and the sign of the spin Hall angle. This optical approach is free from the complications of various resistive effects, which can compromise voltage measurements. This opens up the study of spin Hall effect in metals to a variety of spin dynamic and spatial imaging experiments.

  7. Topological superconductivity, topological confinement, and the vortex quantum Hall effect

    SciTech Connect

    Diamantini, M. Cristina; Trugenberger, Carlo A.

    2011-09-01

    Topological matter is characterized by the presence of a topological BF term in its long-distance effective action. Topological defects due to the compactness of the U(1) gauge fields induce quantum phase transitions between topological insulators, topological superconductors, and topological confinement. In conventional superconductivity, because of spontaneous symmetry breaking, the photon acquires a mass due to the Anderson-Higgs mechanism. In this paper we derive the corresponding effective actions for the electromagnetic field in topological superconductors and topological confinement phases. In topological superconductors magnetic flux is confined and the photon acquires a topological mass through the BF mechanism: no symmetry breaking is involved, the ground state has topological order, and the transition is induced by quantum fluctuations. In topological confinement, instead, electric charge is linearly confined and the photon becomes a massive antisymmetric tensor via the Stueckelberg mechanism. Oblique confinement phases arise when the string condensate carries both magnetic and electric flux (dyonic strings). Such phases are characterized by a vortex quantum Hall effect potentially relevant for the dissipationless transport of information stored on vortices.

  8. Proximity-Induced Anomalous Hall Effect in Graphene

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyong; Tang, Chi; Sachs, Raymond; Barlas, Yafis; Shi, Jing

    2014-03-01

    Pre-patterned graphene devices are transferred from SiO2/Si to atomically flat magnetic insulator thin films, yttrium iron garnet (YIG) deposited by a laser molecular beam epitaxial system on gadolinium gallium garnet (GGG) substrate. Room temperature Raman spectroscopy reveals both single-layer graphene and YIG characteristic peaks. In addition to the ordinary Hall effect, there is a clear non-linear Hall component correlated with the magnetization of the YIG films, which we attribute to the anomalous Hall effect (AHE). The magnitude of AHE in graphene/YIG devices decreases as temperature increases. With device-to-device variations, in some devices, AHE persists to room temperature, indicating a strong proximity-induced exchange interaction. By sweeping top gate voltages, one can tune the carrier density across the Dirac point. We also find that the carrier mobility is not significantly different in graphene/YIG. As the graphene is tuned from the electron- to hole-type, the ordinary Hall changes the sign as expected, but the sign of the AHE contribution remains the same. It suggests that AHE does not simply originate from the carrier density change which is responsible for the ordinary Hall effect, but is related to the spin-orbit interaction in the system. This work was supported in part by DOE and NSF.

  9. Composed planar Hall effect sensors with dual-mode operation

    NASA Astrophysics Data System (ADS)

    Mor, Vladislav; Roy, Debangsu; Schultz, Moty; Klein, Lior

    2016-02-01

    We present a composed planar Hall effect sensor with two modes of operation: (a) an ON mode where the composed sensor responds to magnetic field excitations similarly to the response of a regular planar Hall effect sensor, and (b) an OFF mode where the response is negligible. The composed planar Hall effect sensor switches from the OFF mode to the ON mode when it is exposed to a magnetic field which exceeds a certain threshold determined by the sensor design. The features of this sensor make it useful as a switch triggered by magnetic field and as a sensing device with memory, as its mode of operation indicates exposure to a magnetic field larger than a certain threshold without the need to be activated during the exposure itself.

  10. Electrical Measurement of the Direct Spin Hall Effect in Fe/GaAs Heterostructures

    NASA Astrophysics Data System (ADS)

    Garlid, E. S.; Hu, Q.; Chan, M. K.; Palmstrøm, C. J.; Crowell, P. A.

    2010-03-01

    A handful of recent experiments, all of which have used optical techniques, have investigated the spin Hall effect in semiconductors. We report on an all-electrical measurement showing evidence of the spin Hall effect in epitaxial (100) Fe/GaAs heterostructures with a channel doping (Si) of n =5x10^16 cm-3 and highly doped Schottky tunnel barriers (n^+=5x10^18 cm-3). Multiple devices were fabricated on a single chip with the distance of the ferromagnetic (FM) electrodes from the channel edge varying between 2 and 10 μm. Devices were first characterized by performing non-local spin valve and Hanle measurements. Hall measurements were then performed with an unpolarized current flowing down the GaAs channel parallel to the magnetic easy axis of the FM electrodes. A magnetic field was applied along the FM hard axis to induce precession of the out-of-plane spins at the channel edges into the FM easy axis. We investigate the bias and temperature dependence of the resulting Hanle signal, and find that it is consistent with an extrinsic spin Hall effect. The data suggests that ionized impurity scattering is the dominant contribution to the spin Hall conductivity in these samples. Supported by ONR and NSF.

  11. Anomalous Hall Effect in a Feromagnetic Rare-Earth Cobalite

    NASA Technical Reports Server (NTRS)

    Samoilov, A. V.; Yeh, N. C.; Vasquez, R. P.

    1996-01-01

    Rare-Earth manganites and cobalites with the perovskite structure have been a subject of great recent interest because their electrical resistance changes significantly when a magnetic field is applied...we have studied the Hall effect in thin film La(sub 0.5)Ca(sub 0.5)CoO(sub 3) material and have obtained convincing evidence fo the so called anomalous Hall effect, typical for magnetic metals...Our results suggest that near the ferromagnetic ordering temperature, the dominant electron scattering mechanism is the spin fluctuation.

  12. Spin-Drag Hall Effect in a Rotating Bose Mixture

    SciTech Connect

    Driel, H. J. van; Duine, R. A.; Stoof, H. T. C.

    2010-10-08

    We show that in a rotating two-component Bose mixture, the spin drag between the two different spin species shows a Hall effect. This spin-drag Hall effect can be observed experimentally by studying the out-of-phase dipole mode of the mixture. We determine the damping of this mode due to spin drag as a function of temperature. We find that due to Bose stimulation there is a strong enhancement of the damping for temperatures close to the critical temperature for Bose-Einstein condensation.

  13. Spin accumulation in the extrinsic spin Hall effect

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Fabian, J.; Žutić, I.; Das Sarma, S.

    2005-12-01

    The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.

  14. Observation of the Spin Hall Effect in Semiconductors

    NASA Astrophysics Data System (ADS)

    Kato, Y. K.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D.

    2004-12-01

    Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

  15. Observation of the spin Hall effect in semiconductors.

    PubMed

    Kato, Y K; Myers, R C; Gossard, A C; Awschalom, D D

    2004-12-10

    Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

  16. Microwave Hall effect measurements on biological and organic semiconductors

    NASA Astrophysics Data System (ADS)

    Al-Zoubi, A. Y.; Hasan, O. M.

    2005-01-01

    Microwave Hall effect measurements have been performed by improved 10 GHz bimodal cavity resonators with hybrid end walls used to avoid the background signal that obscures the measurements on low mobility materials. Hall mobility results on copper phthalocyanines CuPc and other organic semiconductors, in the range of 8 cm2/V s to 60 cm2/V s, provide evidence of acoustic phonon scattering as the dominant conduction mechanism. Presently, the microwave Hall effect seems to represent the only means available for quantitative measurements on biological substances like DNA and proteins, which yield mobility values lower than 10 cm2/V s, and are therefore consistent with conduction mechanism involving hopping of charge carriers between localized energy sites.

  17. Thermal Hall Effect of Spin Excitations in a Kagome Magnet.

    PubMed

    Hirschberger, Max; Chisnell, Robin; Lee, Young S; Ong, N P

    2015-09-01

    At low temperatures, the thermal conductivity of spin excitations in a magnetic insulator can exceed that of phonons. However, because they are charge neutral, the spin waves are not expected to display a thermal Hall effect. However, in the kagome lattice, theory predicts that the Berry curvature leads to a thermal Hall conductivity κ(xy). Here we report observation of a large κ(xy) in the kagome magnet Cu(1-3, bdc) which orders magnetically at 1.8 K. The observed κ(xy) undergoes a remarkable sign reversal with changes in temperature or magnetic field, associated with sign alternation of the Chern flux between magnon bands. The close correlation between κ(xy) and κ(xx) firmly precludes a phonon origin for the thermal Hall effect. PMID:26382691

  18. Thermal Hall Effect of Spin Excitations in a Kagome Magnet.

    PubMed

    Hirschberger, Max; Chisnell, Robin; Lee, Young S; Ong, N P

    2015-09-01

    At low temperatures, the thermal conductivity of spin excitations in a magnetic insulator can exceed that of phonons. However, because they are charge neutral, the spin waves are not expected to display a thermal Hall effect. However, in the kagome lattice, theory predicts that the Berry curvature leads to a thermal Hall conductivity κ(xy). Here we report observation of a large κ(xy) in the kagome magnet Cu(1-3, bdc) which orders magnetically at 1.8 K. The observed κ(xy) undergoes a remarkable sign reversal with changes in temperature or magnetic field, associated with sign alternation of the Chern flux between magnon bands. The close correlation between κ(xy) and κ(xx) firmly precludes a phonon origin for the thermal Hall effect.

  19. Extrinsic Spin Hall Effect Due to Transition-Metal Impurities

    NASA Astrophysics Data System (ADS)

    Tanaka, T.; Kontani, H.

    2012-11-01

    We investigate the extrinsic spin Hall effect in the electron gas model due to transition-metal impurities based on the single-impurity Anderson model with orbital degrees of freedom. Both the skew scattering and side jump mechanisms are analyzed in a unified way, and the significant role of orbital degrees of freedom are clarified. The obtained spin Hall conductivities are in proportion to the spin-orbit polarization at the Fermi level < {l} . {s} >_{μ} as is the case with the intrinsic spin Hall effect: skew scattering term {SH}^{ss} ∝ < {l} . {s} >_{μ} δ_1 σ_{xx}, and side jump term σ_{SH}^{sj} ∝ < {l} . {s} >_{μ}, where δ_1 is the phase shift for p (l = 1) partial wave. Furthermore, the present study indicates the existence of a nontrivial close relationship between the intrinsic term σ_{SH}^{int} and the extrinsic side jump term σ_{SH}^{sj}.

  20. Band Collapse and the Quantum Hall Effect in Graphene

    SciTech Connect

    Bernevig, B.Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng; Chen, Han-Dong; Wu, Congjun; /Santa Barbara, KITP

    2010-03-16

    The recent Quantum Hall experiments in graphene have confirmed the theoretically well-understood picture of the quantum Hall (QH) conductance in fermion systems with continuum Dirac spectrum. In this paper we take into account the lattice, and perform an exact diagonalization of the Landau problem on the hexagonal lattice. At very large magnetic fields the Dirac argument fails completely and the Hall conductance, given by the number of edge states present in the gaps of the spectrum, is dominated by lattice effects. As the field is lowered, the experimentally observed situation is recovered through a phenomenon which we call band collapse. As a corollary, for low magnetic field, graphene will exhibit two qualitatively different QHE's: at low filling, the QHE will be dominated by the 'relativistic' Dirac spectrum and the Hall conductance will be odd-integer; above a certain filling, the QHE will be dominated by a non-relativistic spectrum, and the Hall conductance will span all integers, even and odd.

  1. OPTICS. Quantum spin Hall effect of light.

    PubMed

    Bliokh, Konstantin Y; Smirnova, Daria; Nori, Franco

    2015-06-26

    Maxwell's equations, formulated 150 years ago, ultimately describe properties of light, from classical electromagnetism to quantum and relativistic aspects. The latter ones result in remarkable geometric and topological phenomena related to the spin-1 massless nature of photons. By analyzing fundamental spin properties of Maxwell waves, we show that free-space light exhibits an intrinsic quantum spin Hall effect—surface modes with strong spin-momentum locking. These modes are evanescent waves that form, for example, surface plasmon-polaritons at vacuum-metal interfaces. Our findings illuminate the unusual transverse spin in evanescent waves and explain recent experiments that have demonstrated the transverse spin-direction locking in the excitation of surface optical modes. This deepens our understanding of Maxwell's theory, reveals analogies with topological insulators for electrons, and offers applications for robust spin-directional optical interfaces. PMID:26113717

  2. OPTICS. Quantum spin Hall effect of light.

    PubMed

    Bliokh, Konstantin Y; Smirnova, Daria; Nori, Franco

    2015-06-26

    Maxwell's equations, formulated 150 years ago, ultimately describe properties of light, from classical electromagnetism to quantum and relativistic aspects. The latter ones result in remarkable geometric and topological phenomena related to the spin-1 massless nature of photons. By analyzing fundamental spin properties of Maxwell waves, we show that free-space light exhibits an intrinsic quantum spin Hall effect—surface modes with strong spin-momentum locking. These modes are evanescent waves that form, for example, surface plasmon-polaritons at vacuum-metal interfaces. Our findings illuminate the unusual transverse spin in evanescent waves and explain recent experiments that have demonstrated the transverse spin-direction locking in the excitation of surface optical modes. This deepens our understanding of Maxwell's theory, reveals analogies with topological insulators for electrons, and offers applications for robust spin-directional optical interfaces.

  3. Quantum spin Hall effect of light

    NASA Astrophysics Data System (ADS)

    Bliokh, Konstantin Y.; Smirnova, Daria; Nori, Franco

    2015-06-01

    Maxwell’s equations, formulated 150 years ago, ultimately describe properties of light, from classical electromagnetism to quantum and relativistic aspects. The latter ones result in remarkable geometric and topological phenomena related to the spin-1 massless nature of photons. By analyzing fundamental spin properties of Maxwell waves, we show that free-space light exhibits an intrinsic quantum spin Hall effect—surface modes with strong spin-momentum locking. These modes are evanescent waves that form, for example, surface plasmon-polaritons at vacuum-metal interfaces. Our findings illuminate the unusual transverse spin in evanescent waves and explain recent experiments that have demonstrated the transverse spin-direction locking in the excitation of surface optical modes. This deepens our understanding of Maxwell’s theory, reveals analogies with topological insulators for electrons, and offers applications for robust spin-directional optical interfaces.

  4. Depletion effect of oxide semiconductor analyzed by Hall effects.

    PubMed

    Oh, Teresa

    2014-12-01

    This letter discusses the tunneling behavior of amorphous indium-gallium-zinc-oxide (a-IGZO) analyzed through the observation of its Hall effects. The properties of the a-IGZO changed from those of a majority carrier to those of a minority carrier after the annealing process as a result of the electron-hole recombination due to the thermal activation energy and the formation of a depletion layer with a high-potential Schottky barrier. Therefore, the diffusion current of these minority charge carriers caused ambipolar transfer characteristics, a tunneling behavior, in the metal-oxide semiconductor (MOS) transistor. PMID:25971008

  5. Interaction-Driven Spontaneous Quantum Hall Effect on a Kagome Lattice.

    PubMed

    Zhu, W; Gong, Shou-Shu; Zeng, Tian-Sheng; Fu, Liang; Sheng, D N

    2016-08-26

    Topological states of matter have been widely studied as being driven by an external magnetic field, intrinsic spin-orbital coupling, or magnetic doping. Here, we unveil an interaction-driven spontaneous quantum Hall effect (a Chern insulator) emerging in an extended fermion-Hubbard model on a kagome lattice, based on a state-of-the-art density-matrix renormalization group on cylinder geometry and an exact diagonalization in torus geometry. We first demonstrate that the proposed model exhibits an incompressible liquid phase with doublet degenerate ground states as time-reversal partners. The explicit spontaneous time-reversal symmetry breaking is determined by emergent uniform circulating loop currents between nearest neighbors. Importantly, the fingerprint topological nature of the ground state is characterized by quantized Hall conductance. Thus, we identify the liquid phase as a quantum Hall phase, which provides a "proof-of-principle" demonstration of the interaction-driven topological phase in a topologically trivial noninteracting band. PMID:27610866

  6. Interaction-Driven Spontaneous Quantum Hall Effect on a Kagome Lattice

    NASA Astrophysics Data System (ADS)

    Zhu, W.; Gong, Shou-Shu; Zeng, Tian-Sheng; Fu, Liang; Sheng, D. N.

    2016-08-01

    Topological states of matter have been widely studied as being driven by an external magnetic field, intrinsic spin-orbital coupling, or magnetic doping. Here, we unveil an interaction-driven spontaneous quantum Hall effect (a Chern insulator) emerging in an extended fermion-Hubbard model on a kagome lattice, based on a state-of-the-art density-matrix renormalization group on cylinder geometry and an exact diagonalization in torus geometry. We first demonstrate that the proposed model exhibits an incompressible liquid phase with doublet degenerate ground states as time-reversal partners. The explicit spontaneous time-reversal symmetry breaking is determined by emergent uniform circulating loop currents between nearest neighbors. Importantly, the fingerprint topological nature of the ground state is characterized by quantized Hall conductance. Thus, we identify the liquid phase as a quantum Hall phase, which provides a "proof-of-principle" demonstration of the interaction-driven topological phase in a topologically trivial noninteracting band.

  7. Study of the effects of guide field on Hall reconnection

    SciTech Connect

    Tharp, T. D.; Yamada, M.; Ji, H.; Lawrence, E.; Dorfman, S.; Myers, C.; Yoo, J.; Huang, Y.-M.; Bhattacharjee, A.

    2013-05-15

    The results from guide field studies on the Magnetic Reconnection Experiment (MRX) are compared with results from Hall magnetohydrodynamic (HMHD) reconnection simulation with guide field. The quadrupole field, a signature of two-fluid reconnection at zero guide field, is modified by the presence of a finite guide field in a manner consistent with HMHD simulation. The modified Hall current profile contains reduced electron flows in the reconnection plane, which quantitatively explains the observed reduction of the reconnection rate. The present results are consistent with the hypothesis that the local reconnection dynamics is dominated by Hall effects in the collisionless regime of the MRX plasmas. While very good agreement is seen between experiment and simulations, we note that an important global feature of the experiments, a compression of the guide field by the reconnecting plasma, is not represented in the simulations.

  8. Extrinsic Spin Hall effect of AuW alloys

    NASA Astrophysics Data System (ADS)

    Laczkowski, Piotr; Rojas-Sánchez, Juan Carlos; Savero-Torres, Williams; Reyren, Nicolas; Deranlot, Cyril; George, Jean-Marie; Jaffres, Henri; Beigné, Cyril; Notin, Lucien; Collin, Sophie; Marty, Alain; Attané, Jean-Philippe; Vila, Laurent; Petroff, Frederic; Fert, Albert; UMPhy CNRS-Thales Palaiseau Team; CEA-SP2M-INAC Grenoble Team

    The spin Hall effect (SHE) allows a reciprocal conversion between charge and spin currents using spin orbit interactions. Large Spin Hall angle have been reported in transition metals (Pt, W, Beta-Ta) and in alloys made of heavy metals. We will report on SHA in AuW alloys exhibiting a non-monotonic relation with W content. In this regime, it suggests a skew-scattering to side-jump dominant contribution to the spin Hall resistivity, thus allowing precise tuning of SHA vs. W content. We will present experiments by using Lateral Spin Valves with refined spin-absorption model adapted to strong spin-orbit interactions. By using complementary FMR/Spin-Pumping techniques, we demonstrate very large SHA of the order of 15 % at rather high W concentration in rather good agreement with the previous method

  9. Sign change of the flux flow Hall effect in HTSC

    SciTech Connect

    Feigel`man, M.V.; Geshkenbein, V.B.; Larkin, A.I.; Vinokur, V.M.

    1996-11-01

    A novel mechanism for the sign change of the Hall effect in the flux flow region is proposed. The difference {delta}{ital n} between the electron density at the center of the vortex core and that far outside the vortex causes the additional contribution to the Hall conductivity {delta}{sigma}{sub xy} = -{delta}{ital nec}/{ital B}. This contribution can be larger than the conventional one in the dirty case {Delta}{ital T}{tau} {lt} 1. If the electron density inside the core exceeds the electron density far outside, a double sign change may occur as a function of temperature.

  10. Quantum anomalous Hall effect in topological insulator memory

    SciTech Connect

    Jalil, Mansoor B. A.; Tan, S. G.; Siu, Z. B.

    2015-05-07

    We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

  11. Anomalous Hall Effect in a 2D Rashba Ferromagnet

    NASA Astrophysics Data System (ADS)

    Ado, I. A.; Dmitriev, I. A.; Ostrovsky, P. M.; Titov, M.

    2016-07-01

    Skew scattering on rare impurity configurations is shown to dominate the anomalous Hall effect in a 2D Rashba ferromagnet. The mechanism originates in scattering on rare impurity pairs separated by distances of the order of the Fermi wavelength. The corresponding theoretical description goes beyond the conventional noncrossing approximation. The mechanism provides the only contribution to the anomalous Hall conductivity in the most relevant metallic regime and strongly modifies previously obtained results for lower energies in the leading order with respect to impurity strength.

  12. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  13. Inverse spin Hall effect in a closed loop circuit

    SciTech Connect

    Omori, Y.; Auvray, F.; Wakamura, T.; Niimi, Y.; Fert, A.

    2014-06-16

    We present measurements of inverse spin Hall effects (ISHEs), in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

  14. Homogenization of the Three-dimensional Hall Effect and Change of Sign of the Hall Coefficient

    NASA Astrophysics Data System (ADS)

    Briane, Marc; Milton, Graeme W.

    2009-09-01

    The notion of a Hall matrix associated with a possibly anisotropic conducting material in the presence of a small magnetic field is introduced. Then, for any material having a microstructure we prove a general homogenization result satisfied by the Hall matrix in the framework of the H-convergence of Murat-Tartar. Extending a result of Bergman, we show that the Hall matrix can be computed from the corrector associated with the homogenization problem when no magnetic field is present. Finally, we give an example of a microstructure for which the Hall matrix is positive isotropic almost everywhere, while the homogenized Hall matrix is negative isotropic.

  15. Collective Spin-Hall Effect for Electron-Hole Gratings

    NASA Astrophysics Data System (ADS)

    Vignale, Giovanni; Shen, Ka

    2014-03-01

    We study the coupled spin-density transport in a periodically modulated electron gas in a GaAs quantum well. We show that an electric field parallel to the wavefronts of an electron-hole grating generates, via the electronic spin Hall effect, a spin grating of the same wave vector. We refer to this phenomenon as ``collective spin Hall effect''. In our calculation, we include not only the intrinsic but also the extrinsic spin Hall mechanisms. In the extrinsic mechanism we include both skew scattering and side jump. A detailed study of the coupled-spin charge dynamics for quantum wells grown in different directions reveals rich features in the time evolution of the induced spin density. For example, in the symmetric (110) quantum well the amplitude of the induced spin density is controlled solely by skew scattering and can be as large as 1% of that of the initial density modulation.Similarly, the collective spin Hall effect in (001) QWs with identical Rashba and Dresselhaus SOC strengths is also entirely controlled by skew scattering. In this case, the skew scattering generates a spiral spin density wave when the wave vector of the initial grating matches the wave vector of the spin-orbit coupling. Ref: Ka Shen and G. Vignale, PRL 111, 136602 (2013). NSF Grant No. DMR-1104788.

  16. Nonlinear dynamics induced anomalous Hall effect in topological insulators

    PubMed Central

    Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

    2016-01-01

    We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

  17. The integer quantum hall effect revisited

    SciTech Connect

    Michalakis, Spyridon; Hastings, Matthew

    2009-01-01

    For T - L x L a finite subset of Z{sup 2}, let H{sub o} denote a Hamiltonian on T with periodic boundary conditions and finite range, finite strength intetactions and a unique ground state with a nonvanishing spectral gap. For S {element_of} T, let q{sub s} denote the charge at site s and assume that the total charge Q = {Sigma}{sub s {element_of} T} q{sub s} is conserved. Using the local charge operators q{sub s}, we introduce a boundary magnetic flux in the horizontal and vertical direction and allow the ground state to evolve quasiadiabatically around a square of size one magnetic flux, in flux space. At the end of the evolution we obtain a trivial Berry phase, which we compare, via a method reminiscent of Stokes Theorem. to the Berry phase obtained from an evolution around an exponentially small loop near the origin. As a result, we show, without any averaging assumption, that the Hall conductance is quantized in integer multiples of e{sup 2}/h up to exponentially small corrections of order e{sup -L/{zeta}}, where {zeta}, is a correlation length that depends only on the gap and the range and strength of the interactions.

  18. 4.5-kW Hall Effect Thruster Evaluated

    NASA Technical Reports Server (NTRS)

    Mason, Lee S.

    2000-01-01

    As part of an Interagency Agreement with the Air Force Research Lab (AFRL), a space simulation test of a Russian SPT 140 Hall Effect Thruster was completed in September 1999 at Vacuum Facility 6 at the NASA Glenn Research Center at Lewis Field. The thruster was subjected to a three-part test sequence that included thrust and performance characterization, electromagnetic interference, and plume contamination. SPT 140 is a 4.5-kW thruster developed under a joint agreement between AFRL, Atlantic Research Corp, and Space Systems/Loral, and was manufactured by the Fakal Experimental Design Bureau of Russia. All objectives were satisfied, and the thruster performed exceptionally well during the 120-hr test program, which comprised 33 engine firings. The Glenn testing provided a critical contribution to the thruster development effort, and the large volume and high pumping speed of this vacuum facility was key to the test s success. The low background pressure (1 10 6 torr) provided a more accurate representation of space vacuum than is possible in most vacuum chambers. The facility had been upgraded recently with new cryogenic pumps and sputter shielding to support the active electric propulsion program at Glenn. The Glenn test team was responsible for all test support equipment, including the thrust stand, power supplies, data acquisition, electromagnetic interference measurement equipment, and the contamination measurement system.

  19. Anomalous Hall effect in Cr doped FeSi

    NASA Astrophysics Data System (ADS)

    Yadam, Sankararao; Lakhani, Archana; Singh, Durgesh; Prasad, Rudra; Ganesan, V.

    2016-05-01

    Investigations of economically affordable bulk materials for the spin based electronics are in huge demand. In this direction, electrical and Hall transport properties of the polycrystalline Cr doped Kondo insulator FeSi, i.e Fe0.975Cr0.025Si is reported. Well agreement between temperature dependence of the Hall and linear resistivity are observed. The observed minimum at ~19K in the resistivity is attributed to the ferromagnetic transition temperature (TC). Anomalous Hall resistivity is seen in the itinerant ferromagnet, Fe0.975Cr0.025Si well below the TC. The obtained Hall resistivity is comparable with that of the spintronic material Fe0.9Co0.1Si. The present study proves that the electrical transport properties of bulk materials made by low cost elements such as Fe, Cr and Si exhibits large magnetic field effects and are useful for the spintronics applications, unlike spintronics material (Ga, Mn)As that demand higher costs.

  20. Vortices in superconducting films: Statistics and fractional quantum Hall effect

    SciTech Connect

    Dziarmaga, J.

    1996-03-01

    We present a derivation of the Berry phase picked up during exchange of parallel vortices. This derivation is based on the Bogolubov{endash}de Gennes formalism. The origin of the Magnus force is also critically reanalyzed. The Magnus force can be interpreted as an interaction with the effective magnetic field. The effective magnetic field may be even of the order 10{sup 6}{ital T}/A. We discuss a possibility of the fractional quantum Hall effect (FQHE) in vortex systems. As the real magnetic field is varied to drive changes in vortex density, the vortex density will prefer to stay at some quantized values. The mere existence of the FQHE does not depend on vortex quantum statistics, although the pattern of the plateaux does. We also discuss how the density of anyonic vortices can lower the effective strengh of the Magnus force, what might be observable in measurements of Hall resistivity. {copyright} {ital 1996 The American Physical Society.}

  1. Strong spin Hall effect in the antiferromagnet PtMn

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

    2016-06-01

    Effectively manipulating magnetism in ferromagnet (FM) thin-film nanostructures with an in-plane current has become feasible since the determination of a "giant" spin Hall effect (SHE) in certain heavy metal/FM systems. Recently, both theoretical and experimental reports indicate that metallic antiferromagnet materials can have both a large anomalous Hall effect and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the "spin memory loss" we obtain, in the best instance, a spin-torque efficiency ξDLPtMn≡TintθSHPtMn≃0.24 , where Tint is the effective interface spin transparency. This is more than twice the previously reported spin-torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long, λsPtMn≈2.3 nm .

  2. A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy.

    PubMed

    Yamaguchi, Akinobu; Saito, Hiromasa; Shimizu, Masayoshi; Miyajima, Hideki; Matsumoto, Satoru; Nakamura, Yoshiharu; Hirohata, Atsufumi

    2008-08-01

    We demonstrate successful operation of a scanning Hall probe microscope with a few micron-size resolution by using a silicon metal-oxide semiconductor field-effect transistor (Si-MOSFET) Hall bar, which is designed to improve not only the mechanical strength but also the temperature stability. The Si-MOSFET micro-Hall probe is cheaper than the current micro-Hall probes and is found to be as sensitive as a micro-Hall probe with GaAs/AlGaAs heterostructure or an epitaxial InSb two-dimensional electron gas. This was used to magnetically image the surface of a Sm(2)Co(17) permanent magnet during the magnetization reversal process as a function of an external magnetic field below 1.5 T. This revealed firm evidence of the presence of the inverse magnetic seed as theoretically predicted earlier. Magnetically pinned centers, with a typical size 80 mum, are observed to persist even under a high magnetic field, clearly indicating the robustness of the Si Hall probe against the field application as well as the repetition of the measurement. PMID:19044353

  3. A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy.

    PubMed

    Yamaguchi, Akinobu; Saito, Hiromasa; Shimizu, Masayoshi; Miyajima, Hideki; Matsumoto, Satoru; Nakamura, Yoshiharu; Hirohata, Atsufumi

    2008-08-01

    We demonstrate successful operation of a scanning Hall probe microscope with a few micron-size resolution by using a silicon metal-oxide semiconductor field-effect transistor (Si-MOSFET) Hall bar, which is designed to improve not only the mechanical strength but also the temperature stability. The Si-MOSFET micro-Hall probe is cheaper than the current micro-Hall probes and is found to be as sensitive as a micro-Hall probe with GaAs/AlGaAs heterostructure or an epitaxial InSb two-dimensional electron gas. This was used to magnetically image the surface of a Sm(2)Co(17) permanent magnet during the magnetization reversal process as a function of an external magnetic field below 1.5 T. This revealed firm evidence of the presence of the inverse magnetic seed as theoretically predicted earlier. Magnetically pinned centers, with a typical size 80 mum, are observed to persist even under a high magnetic field, clearly indicating the robustness of the Si Hall probe against the field application as well as the repetition of the measurement.

  4. Development and Characterization of High-Efficiency, High-Specific Impulse Xenon Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Hofer, Richard R.; Jacobson, David (Technical Monitor)

    2004-01-01

    This dissertation presents research aimed at extending the efficient operation of 1600 s specific impulse Hall thruster technology to the 2000 to 3000 s range. Motivated by previous industry efforts and mission studies, the aim of this research was to develop and characterize xenon Hall thrusters capable of both high-specific impulse and high-efficiency operation. During the development phase, the laboratory-model NASA 173M Hall thrusters were designed and their performance and plasma characteristics were evaluated. Experiments with the NASA-173M version 1 (v1) validated the plasma lens magnetic field design. Experiments with the NASA 173M version 2 (v2) showed there was a minimum current density and optimum magnetic field topography at which efficiency monotonically increased with voltage. Comparison of the thrusters showed that efficiency can be optimized for specific impulse by varying the plasma lens. During the characterization phase, additional plasma properties of the NASA 173Mv2 were measured and a performance model was derived. Results from the model and experimental data showed how efficient operation at high-specific impulse was enabled through regulation of the electron current with the magnetic field. The electron Hall parameter was approximately constant with voltage, which confirmed efficient operation can be realized only over a limited range of Hall parameters.

  5. Quantum Hall effect and semiconductor-to-semimetal transition in biased black phosphorus

    NASA Astrophysics Data System (ADS)

    Yuan, Shengjun; van Veen, Edo; Katsnelson, Mikhail I.; Roldán, Rafael

    2016-06-01

    We study the quantum Hall effect of two-dimensional electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor-to-semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore but follow the ɛn∝√{n B } characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a σx y∝2 n quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime) and a σx y∝4 (n +1 /2 ) quantization in the semimetallic phase, characteristic of Dirac systems with nontrivial topology.

  6. Quasiparticle Aggregation in the Fractional Quantum Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-10-10

    Quasiparticles in the Fractional Quantum Hall Effect behave qualitatively like electrons confined to the lowest landau level, and can do everything electrons can do, including condense into second generation Fractional Quantum Hall ground states. I review in this paper the reasoning leading to variational wavefunctions for ground state and quasiparticles in the 1/3 effect. I then show how two-quasiparticle eigenstates are uniquely determined from symmetry, and how this leads in a natural way to variational wavefunctions for composite states which have the correct densities (2/5, 2/7, ...). I show in the process that the boson, anyon and fermion representations for the quasiparticles used by Haldane, Halperin, and me are all equivalent. I demonstrate a simple way to derive Halperin`s multiple-valued quasiparticle wavefunction from the correct single-valued electron wavefunction. (auth)

  7. Charge fractionalization in the integer quantum Hall effect.

    PubMed

    Inoue, Hiroyuki; Grivnin, Anna; Ofek, Nissim; Neder, Izhar; Heiblum, Moty; Umansky, Vladimir; Mahalu, Diana

    2014-04-25

    We report an observation, via sensitive shot noise measurements, of charge fractionalization of chiral edge electrons in the integer quantum Hall effect regime. Such fractionalization results solely from interchannel Coulomb interaction, leading electrons to decompose to excitations carrying fractional charges. The experiment was performed by guiding a partitioned current carrying edge channel in proximity to another unbiased edge channel, leading to shot noise in the unbiased edge channel without net current, which exhibited an unconventional dependence on the partitioning. The determination of the fractional excitations, as well as the relative velocities of the two original (prior to the interaction) channels, relied on a recent theory pertaining to this measurement. Our result exemplifies the correlated nature of multiple chiral edge channels in the integer quantum Hall effect regime.

  8. Hall effect in quantum critical charge-cluster glass

    NASA Astrophysics Data System (ADS)

    Wu, Jie; Bollinger, Anthony T.; Sun, Yujie

    2016-04-01

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ˜ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ˜ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps, Δx ˜ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.

  9. Hall effect in quantum critical charge-cluster glass.

    PubMed

    Wu, Jie; Bollinger, Anthony T; Sun, Yujie; Božović, Ivan

    2016-04-19

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4(LSCO) samples doped near the quantum critical point atx∼ 0.06. Dramatic fluctuations in the Hall resistance appear belowTCG∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,Δx∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state. PMID:27044081

  10. Precise quantization of anomalous Hall effect near zero magnetic field

    SciTech Connect

    Bestwick, A. J.; Fox, E. J.; Kou, Xufeng; Pan, Lei; Wang, Kang L.; Goldhaber-Gordon, D.

    2015-05-04

    In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.

  11. Hall effect in quantum critical charge-cluster glass

    PubMed Central

    Wu, Jie; Bollinger, Anthony T.; Sun, Yujie; Božović, Ivan

    2016-01-01

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ∼ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps, Δx ∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state. PMID:27044081

  12. Hall effect in quantum critical charge-cluster glass.

    PubMed

    Wu, Jie; Bollinger, Anthony T; Sun, Yujie; Božović, Ivan

    2016-04-19

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4(LSCO) samples doped near the quantum critical point atx∼ 0.06. Dramatic fluctuations in the Hall resistance appear belowTCG∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,Δx∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.

  13. Critical current destabilizing perpendicular magnetization by the spin Hall effect

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomohiro; Mitani, Seiji; Hayashi, Masamitsu

    2015-07-01

    The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect are included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the critical current scales with the damping constant as α0 (i.e., damping independent), α , and α1 /2 depending on the sign of the fieldlike torque and other parameters such as the external field. Numerical and analytical results show that the critical current can be significantly reduced when the fieldlike torque possesses the appropriate sign, i.e., when the effective field associated with the fieldlike torque is pointing opposite to the spin direction of the incoming electrons. These results provide a pathway to reducing the current needed to switch magnetization using the spin Hall effect.

  14. Finite-temperature effective boundary theory of the quantized thermal Hall effect

    NASA Astrophysics Data System (ADS)

    Nakai, Ryota; Ryu, Shinsei; Nomura, Kentaro

    2016-02-01

    A finite-temperature effective free energy of the boundary of a quantized thermal Hall system is derived microscopically from the bulk two-dimensional Dirac fermion coupled with a gravitational field. In two spatial dimensions, the thermal Hall conductivity of fully gapped insulators and superconductors is quantized and given by the bulk Chern number, in analogy to the quantized electric Hall conductivity in quantum Hall systems. From the perspective of effective action functionals, two distinct types of the field theory have been proposed to describe the quantized thermal Hall effect. One of these, known as the gravitational Chern-Simons action, is a kind of topological field theory, and the other is a phenomenological theory relevant to the Strěda formula. In order to solve this problem, we derive microscopically an effective theory that accounts for the quantized thermal Hall effect. In this paper, the two-dimensional Dirac fermion under a static background gravitational field is considered in equilibrium at a finite temperature, from which an effective boundary free energy functional of the gravitational field is derived. This boundary theory is shown to explain the quantized thermal Hall conductivity and thermal Hall current in the bulk by assuming the Lorentz symmetry. The bulk effective theory is consistently determined via the boundary effective theory.

  15. Simulation of the many-body dynamical quantum Hall effect in an optical lattice

    NASA Astrophysics Data System (ADS)

    Zhang, Dan-Wei; Yang, Xu-Chen

    2016-05-01

    We propose an experimental scheme to simulate the many-body dynamical quantum Hall effect with ultra-cold bosonic atoms in a one-dimensional optical lattice. We first show that the required model Hamiltonian of a spin-1/2 Heisenberg chain with an effective magnetic field and tunable parameters can be realized in this system. For dynamical response to ramping the external fields, the quantized plateaus emerge in the Berry curvature of the interacting atomic spin chain as a function of the effective spin-exchange interaction. The quantization of this response in the parameter space with the interaction-induced topological transition characterizes the many-body dynamical quantum Hall effect. Furthermore, we demonstrate that this phenomenon can be observed in practical cold atom experiments with numerical simulations.

  16. Another Nulling Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Thibodeau, Phillip E.; Sullender, Craig C.

    1993-01-01

    Lightweight, low-power circuit provides noncontact measurement of alternating or direct current of many ampheres in main conductor. Advantages of circuit over other nulling Hall-effect current-measuring circuits is stability and accuracy increased by putting both analog-to-digital and digital-to-analog converters in nulling feedback loop. Converters and rest of circuit designed for operation at sampling rate of 100 kHz, but rate changed to alter time or frequency response of circuit.

  17. A toy model for quantum spin Hall effect

    NASA Astrophysics Data System (ADS)

    Owerre, S. A.; Nsofini, J.

    2015-09-01

    In this communication, we investigate a toy model of three-dimensional topological insulator surface, coupled homogeneously to a fictitious pseudospin-1/2 particle. We show that this toy model captures the interesting features of topological insulator surface states, which include topological quantum phase transition and quantum spin Hall effect. We further incorporate an out-of-plane magnetic field and obtain the Landau levels.

  18. Diagnostic Setup for Characterization of Near-Anode Processes in Hall Thrusters

    SciTech Connect

    L. Dorf; Y. Raitses; N.J. Fisch

    2003-09-08

    A diagnostic setup for characterization of near-anode processes in Hall-current plasma thrusters consisting of biased and emissive electrostatic probes, high-precision positioning system and low-noise electronic circuitry was developed and tested. Experimental results show that radial probe insertion does not cause perturbations to the discharge and therefore can be used for accurate near-anode measurements.

  19. Diagnostic Setup for Characterization of Near-Anode Processes in Hall Thrusters

    SciTech Connect

    L. Dorf; Y. Raitses; N. J. Fisch

    2003-05-29

    A diagnostic setup for characterization of the near-anode processes in Hall thrusters was designed and assembled. Experimental results with a single floating probe show that radial probe insertion does not cause perturbations to the discharge and therefore can be used for near-anode measurements.

  20. Enhanced Spin Hall Effect by Single Antidot Potential

    NASA Astrophysics Data System (ADS)

    Eto, Mikio; Yokoyama, Tomohiro

    2009-03-01

    We theoretically investigate an extrinsic spin Hall effect in semiconductor heterostructures due to the scattering by an artificial potential created by a single antidot, STM tip, etc. The strength of the potential is electrically tunable. First, we formulate the spin Hall effect in terms of phase shifts in the partial wave expansion for two-dimensional electron gas. For scattered electrons in θ direction, we obtain a spin polarization P(θ) perpendicular to the two-dimensional plane [P(-θ)=-P (θ)]. The spin polarization P(θ) is significantly enhanced by an attractive potential when the resonant condition of a partial wave is satisfied by tuning the potential strength. Second, we study the spin Hall effect in a three-terminal device with an antidot at the junction. The conductance and spin polarization are evaluated numerically.ootnotetextM. Yamamoto and B. Kramer, J. Appl. Phys. 103, 123703 (2008), for repulsive potential. We obtain a spin polarization of more than 50% due to the resonant scattering when the attractive potential is properly tuned.

  1. Investigation of the Anomalous Hall Effect in Three Unusual Ferromagnets

    NASA Astrophysics Data System (ADS)

    Sales, Brian

    2007-03-01

    The Hall resistivity (ρxy), resistivity (ρxx), and magnetization of three metallic ferromagnets are investigated as a function of magnetic field and temperature [1]. The three ferromagnets, EuFe4Sb12 (Tc 84 K), Yb14MnSb11 (Tc 53 K), and Eu8Ga16Ge30 (Tc 36 K) are Zintl compounds with carrier concentrations between 1 x 10^21cm-3 and 3.5 x 10^21 cm-3. The relative decrease in ρxx below Tc [ρxx(Tc)/ρxx(2 K)] is 28, 6.5, and 1.3 for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively. The low carrier concentrations coupled with low magnetic anisotropies allow a relatively clean separation between the anomalous (&'circ;xy), and normal contributions to the measured Hall resistivity. For each compound the anomalous contribution in the zero field limit is fit to aρxx+σxyρxx^2 for temperatures T Hall conductivity, σxy, is -220 ± 5 (φ-1 cm-1), -14.7 ± 1 (φ-1 cm-1), and 28 ± 3 (φ-1 cm-1) for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively and is independent of temperature for T < Tc if the change in spontaneous magnetization (order parameter) with temperature is taken into account. These data appear to be consistent with recent theories of the anomalous Hall effect that suggest that even for stochiometric ferromagnetic crystals, such as those studied in this work, the intrinsic Hall conductivity is finite at T = 0, and is a ground state property that can be calculated from the electronic structure. New measurements on single crystals of the tetragonal compound Yb14MnSb11, however, indicate that the intrinsic Hall conductivity can change sign, depending on the direction of the current and magnetic field with respect to the crystallographic axes. These new results will also be discussed within the context of recent theories. Research was done in collaboration with Rongying Jin, David Mandrus and Peter Khalifah. [1] B. C. Sales et al. Phys. Rev. B 73 (2006) 224435.

  2. Fractionally charged skyrmions in fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-11-01

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.

  3. Effects of Enhanced Eathode Electron Emission on Hall Thruster Operation

    SciTech Connect

    Y. Raitses, A. Smirnov and N. J. Fisch

    2009-04-24

    Interesting discharge phenomena are observed that have to do with the interaction between the magnetized Hall thruster plasma and the neutralizing cathode. The steadystate parameters of a highly ionized thruster discharge are strongly influenced by the electron supply from the cathode. The enhancement of the cathode electron emission above its self-sustained level affects the discharge current and leads to a dramatic reduction of the plasma divergence and a suppression of large amplitude, low frequency discharge current oscillations usually related to an ionization instability. These effects correlate strongly with the reduction of the voltage drop in the region with the fringing magnetic field between the thruster channel and the cathode. The measured changes of the plasma properties suggest that the electron emission affects the electron cross-field transport in the thruster discharge. These trends are generalized for Hall thrusters of various configurations.

  4. Fractionally charged skyrmions in fractional quantum Hall effect.

    PubMed

    Balram, Ajit C; Wurstbauer, U; Wójs, A; Pinczuk, A; Jain, J K

    2015-01-01

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region. PMID:26608906

  5. Fractionally charged skyrmions in fractional quantum Hall effect

    PubMed Central

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-01-01

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region. PMID:26608906

  6. Scaling of the anomalous Hall effect in lower conductivity regimes

    NASA Astrophysics Data System (ADS)

    Karel, J.; Bordel, C.; Bouma, D. S.; de Lorimier-Farmer, A.; Lee, H. J.; Hellman, F.

    2016-06-01

    The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial Fe x Si1-x (0.43 < x < 0.71) magnetic thin films by varying the longitudinal conductivity (σxx) using two different approaches: modifying the carrier mean free path (l) with chemical or structural disorder while holding the carrier concentration (nh) constant or varying n h and keeping l constant. The anomalous Hall conductivity (σxy) , when suitably normalized by magnetization and n h , is shown to be independent of σxx for all samples. This observation suggests a primary dependence on an intrinsic mechanism, unsurprising for the epitaxial high conductivity films where the Berry phase curvature mechanism is expected, but remarkable for the amorphous samples. That the amorphous samples show this scaling indicates a local atomic level description of a Berry phase, resulting in an intrinsic AHE in a system that lacks lattice periodicity.

  7. Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

    PubMed

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

    2016-01-01

    The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

  8. Fractionally charged skyrmions in fractional quantum Hall effect.

    PubMed

    Balram, Ajit C; Wurstbauer, U; Wójs, A; Pinczuk, A; Jain, J K

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.

  9. Fractionally charged skyrmions in fractional quantum Hall effect

    SciTech Connect

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.

  10. Interaction driven quantum Hall effect in artificially stacked graphene bilayers

    PubMed Central

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

    2016-01-01

    The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

  11. Non-collinear antiferromagnets and the anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Kübler, J.; Felser, C.

    2014-12-01

    The anomalous Hall effect is investigated theoretically by employing density functional calculations for the non-collinear antiferromagnetic order of the hexagonal compounds Mn3Ge and Mn3Sn using various planar triangular magnetic configurations as well as unexpected non-planar configurations. The former give rise to anomalous Hall conductivities (AHC) that are found to be extremely anisotropic. For the planar cases the AHC is connected with Weyl points in the energy-band structure. If this case were observable in Mn3Ge, a large AHC of about σzx≈ 900 (Ω \\text{cm})-1 should be expected. However, in Mn3Ge it is the non-planar configuration that is energetically favored, in which case it gives rise to an AHC of σxy≈ 100 (Ω \\text{cm})-1 . The non-planar configuration allows a quantitative evaluation of the topological Hall effect that is seen to determine this value of σxy to a large extent. For Mn3Sn it is the planar configurations that are predicted to be observable. In this case the AHC can be as large as σyz≈250 (Ω \\text{cm})-1 .

  12. Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors.

    PubMed

    Lee, B; Chen, Y; Fu, D; Yi, H T; Czelen, K; Najafov, H; Podzorov, V

    2013-12-01

    Fundamental studies of intrinsic charge transport properties of organic semiconductors are often hindered by charge traps associated with static disorder present even in optimized single-crystal devices. Here, we report a method of surface functionalization using an inert non-conjugated polymer, perfluoropolyether (PFPE), deposited at the surface of organic molecular crystals, which results in accumulation of mobile holes and a 'trap healing' effect at the crystal/PFPE interface. As a consequence, a remarkable ultralow-noise, trp-free conduction regime characterized by intrinsic mobility and transport anisotropy emerges in organic single crystals, and Hall effect measurements with an unprecedented signal-to-noise ratio are demonstrated. This general method to convert trap-dominated organic semiconductors to intrinsic systems may enable the determination of intrinsic transport parameters with high accuracy and make Hall effect measurements in molecular crystals ubiquitous. PMID:24162882

  13. Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors.

    PubMed

    Lee, B; Chen, Y; Fu, D; Yi, H T; Czelen, K; Najafov, H; Podzorov, V

    2013-12-01

    Fundamental studies of intrinsic charge transport properties of organic semiconductors are often hindered by charge traps associated with static disorder present even in optimized single-crystal devices. Here, we report a method of surface functionalization using an inert non-conjugated polymer, perfluoropolyether (PFPE), deposited at the surface of organic molecular crystals, which results in accumulation of mobile holes and a 'trap healing' effect at the crystal/PFPE interface. As a consequence, a remarkable ultralow-noise, trp-free conduction regime characterized by intrinsic mobility and transport anisotropy emerges in organic single crystals, and Hall effect measurements with an unprecedented signal-to-noise ratio are demonstrated. This general method to convert trap-dominated organic semiconductors to intrinsic systems may enable the determination of intrinsic transport parameters with high accuracy and make Hall effect measurements in molecular crystals ubiquitous.

  14. Covariant effective action for a Galilean invariant quantum Hall system

    NASA Astrophysics Data System (ADS)

    Geracie, Michael; Prabhu, Kartik; Roberts, Matthew M.

    2016-09-01

    We construct effective field theories for gapped quantum Hall systems coupled to background geometries with local Galilean invariance i.e. Bargmann spacetimes. Along with an electromagnetic field, these backgrounds include the effects of curved Galilean spacetimes, including torsion and a gravitational field, allowing us to study charge, energy, stress and mass currents within a unified framework. A shift symmetry specific to single constituent theories constraints the effective action to couple to an effective background gauge field and spin connection that is solved for by a self-consistent equation, providing a manifestly covariant extension of Hoyos and Son's improvement terms to arbitrary order in m.

  15. Hall effect in a strong magnetic field: Direct comparisons of compressible magnetohydrodynamics and the reduced Hall magnetohydrodynamic equations

    SciTech Connect

    Martin, L. N.; Dmitruk, P.; Gomez, D. O.

    2010-11-15

    In this work we numerically test a model of Hall magnetohydrodynamics in the presence of a strong mean magnetic field: the reduced Hall magnetohydrodynamic model (RHMHD) derived by [Gomez et al., Phys. Plasmas 15, 102303 (2008)] with the addition of weak compressible effects. The main advantage of this model lies in the reduction of computational cost. Nevertheless, up until now the degree of agreement with the original Hall MHD system and the range of validity in a regime of turbulence were not established. In this work direct numerical simulations of three-dimensional Hall MHD turbulence in the presence of a strong mean magnetic field are compared with simulations of the weak compressible RHMHD model. The results show that the degree of agreement is very high (when the different assumptions of RHMHD, such as spectral anisotropy, are satisfied). Nevertheless, when the initial conditions are isotropic but the mean magnetic field is maintained strong, the results differ at the beginning but asymptotically reach a good agreement at relatively short times. We also found evidence that the compressibility still plays a role in the dynamics of these systems, and the weak compressible RHMHD model is able to capture these effects. In conclusion the weak compressible RHMHD model is a valid approximation of the Hall MHD turbulence in the relevant physical context.

  16. Effects of wall electrodes on Hall effect thruster plasma

    SciTech Connect

    Langendorf, S. Walker, M.; Xu, K.

    2015-02-15

    This paper investigates the physical mechanisms that cause beneficial and detrimental performance effect observed to date in Hall effect thrusters with wall electrodes. It is determined that the wall electrode sheath can reduce ion losses to the wall if positioned near the anode (outside the dense region of the plasma) such that an ion-repelling sheath is able to form. The ability of the wall electrode to form an ion-repelling sheath is inversely proportional to the current drawn—if the wall electrode becomes the dominant sink for the thruster discharge current, increases in wall electrode bias result in increased local plasma potential rather than an ion-repelling sheath. A single-fluid electron flow model gives results that mimic the observed potential structures and the current-sharing fractions between the anode and wall electrodes, showing that potential gradients in the presheath and bulk plasma come at the expense of current draw to the wall electrodes. Secondary electron emission from the wall electrodes (or lack thereof) is inferred to have a larger effect if the electrodes are positioned near the exit plane than if positioned near the anode, due to the difference in energy deposition from the plasma.

  17. The microwave Hall effect measured using a waveguide tee

    NASA Astrophysics Data System (ADS)

    Coppock, J. E.; Anderson, J. R.; Johnson, W. B.

    2016-03-01

    This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8-12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm2/(V s).

  18. The Microwave Hall Effect Measured Using a Waveguide Tee

    NASA Astrophysics Data System (ADS)

    Johnson, William; Coppock, Joyce; Anderson, J. Robert

    We describe a simple microwave apparatus to measure the Hall effect in semiconductor wafers. This technique does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing a semiconductor wafer into a slot in an X-band (8 - 12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field is applied perpendicular to the wafer and produces a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d. c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. We determine a calibration constant as a function of the ratio of thickness to skin depth for two and three inch silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm2 / (Vsec)

  19. Application of the quantum Hall effect to resistance metrology

    NASA Astrophysics Data System (ADS)

    Poirier, Wilfrid; Schopfer, Félicien; Guignard, Jérémie; Thévenot, Olivier; Gournay, Pierre

    2011-05-01

    The quantum Hall effect (QHE) discovery has revolutionized metrology by providing with a representation of the unit of resistance, R, that can be reproduced within a relative uncertainty of one part in 10 9 and is theoretically only linked to Planck's constant h and the electron charge e. This breakthrough also results from the development of resistance comparison bridges using cryogenic current comparator (CCC). The QHE experimental know-how now allows the realization of perfectly quantized Quantum Hall Array Resistance Standards (QHARS) by combining a large number of single Hall bars. In the context of an evolution of the Système International (SI) of units by fixing some fundamental constants of physics, the determination of the von Klitzing constant R through the use of the so-called Thompson-Lampard calculable capacitor and the realization of refined universality tests of the QHE are of prime importance. Finally, the fascinating graphene material might be a new turning point in resistance metrology.

  20. Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

    NASA Technical Reports Server (NTRS)

    Huang, Wensheng; Kamhawi, Hani; Myers, James L.; Yim, John T.; Neff, Gregory

    2015-01-01

    The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

  1. Quantum anomalous Hall effect in stable dumbbell stanene

    NASA Astrophysics Data System (ADS)

    Zhang, Huisheng; Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Yang, Zhongqin

    2016-02-01

    Topological property of the dumbbell (DB) stanene, more stable than the stanene with a honeycomb lattice, is investigated by using ab initio methods. The magnetic DB stanene demonstrates an exotic quantum anomalous Hall (QAH) effect due to inversion of the Sn spin-up px,y and spin-down pz states. The QAH gap is found to be opened at Γ point rather than the usual K and K' points, beneficial to observe the effect in experiments. When a 3% tensile strain is applied, a large nontrivial gap (˜50 meV) is achieved. Our results provide another lighthouse for realizing QAH effects in two-dimensional systems.

  2. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

    SciTech Connect

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-01-01

    Topological insulators (TIs) are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of TIs, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional TIs. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically non-trivial energy gap of about 0.15~eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in $e_g$ systems are also discussed.

  3. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

    PubMed

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-01-01

    Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

  4. Chirality-Dependent Hall Effect in Weyl Semimetals.

    PubMed

    Yang, Shengyuan A; Pan, Hui; Zhang, Fan

    2015-10-01

    We generalize a semiclassical theory and use the argument of angular momentum conservation to examine the ballistic transport in lightly doped Weyl semimetals, taking into account various phase-space Berry curvatures. We predict universal transverse shifts of the wave-packet center in transmission and reflection, perpendicular to the direction in which the Fermi energy or velocities change adiabatically. The anomalous shifts are opposite for electrons with different chirality, and they can be made imbalanced by breaking inversion symmetry. We discuss how to utilize local gates, strain effects, and circularly polarized lights to generate and probe such a chirality-dependent Hall effect.

  5. Enhanced Spin Hall Effect in Semiconductor Heterostructures with Artificial Potential

    NASA Astrophysics Data System (ADS)

    Eto, Mikio; Yokoyama, Tomohiro

    2009-07-01

    We theoretically investigate the extrinsic spin Hall effect (SHE) in semiconductor heterostructures, caused by scattering at an artificial potential created by an antidot, STM tip, etc. The potential is electrically tunable. First, we formulate the SHE in terms of phase shifts in the partial wave expansion for a two-dimensional electron gas. The effect is significantly enhanced by resonant scattering when the attractive potential is properly tuned. Second, we examine a three-terminal device including an antidot, which possibly produces a spin current with a polarization of more than 50%.

  6. Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

    SciTech Connect

    Bernevig, B.Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

  7. Ab initio theory of the scattering-independent anomalous Hall effect.

    PubMed

    Weischenberg, Jürgen; Freimuth, Frank; Sinova, Jairo; Blügel, Stefan; Mokrousov, Yuriy

    2011-09-01

    We report on first-principles calculations of the side-jump contribution to the anomalous Hall conductivity (AHC) directly from the electronic structure of a perfect crystal. We implemented our approach for a short-range scattering disorder model within the density functional theory and computed the full scattering-independent AHC in elemental bcc Fe, hcp Co, fcc Ni, and L1(0) FePd and FePt alloys. The full AHC thus calculated agrees systematically with experiment to a degree unattainable so far, correctly capturing the previously missing elements of side-jump contributions, hence paving the way to a truly predictive theory of the anomalous Hall effect and turning it from a characterization tool to a probing tool of multiband complex electronic band structures.

  8. Low Temperature Hall Effect Investigation of Conducting Polymer-Carbon Nanotubes Composite Network

    PubMed Central

    Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; Abdi, Mahnaz M.; Din, Fasih Ud

    2012-01-01

    Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density. PMID:23203102

  9. Anomalous Hall effect in the prospective spintronic material Eu1-x Gd x O integrated with Si

    NASA Astrophysics Data System (ADS)

    Parfenov, Oleg E.; Averyanov, Dmitry V.; Tokmachev, Andrey M.; Taldenkov, Alexander N.; Storchak, Vyacheslav G.

    2016-06-01

    Remarkable properties of EuO make it a versatile spintronic material. Despite numerous experimental and theoretical studies of EuO, little is known about the anomalous Hall effect in this ferromagnet. So far, the effect has not been observed in bulk EuO, though has been detected in EuO films with uncontrolled distribution of defects. In the present work doping is taken under control: epitaxial films of Gd-doped EuO are synthesized integrated with Si using molecular beam epitaxy and characterized with x-ray diffraction and magnetization measurements. Nanoscale transport studies reveal the anomalous Hall effect in the ferromagnetic region for samples with different Gd concentration. The saturated anomalous Hall effect conductivity value of 5.0 S·cm-1 in Gd-doped EuO is more than an order of magnitude larger than those reported so far for Eu chalcogenides doped with anion vacancies.

  10. Quantum anomalous Hall effect in magnetic topological insulators

    DOE PAGES

    Wang, Jing; Lian, Biao; Zhang, Shou -Cheng

    2015-08-25

    The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We presentmore » the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.« less

  11. Quantum anomalous Hall effect in magnetic topological insulators

    SciTech Connect

    Wang, Jing; Lian, Biao; Zhang, Shou -Cheng

    2015-08-25

    The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We present the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.

  12. Vortex equations governing the fractional quantum Hall effect

    SciTech Connect

    Medina, Luciano

    2015-09-15

    An existence theory is established for a coupled non-linear elliptic system, known as “vortex equations,” describing the fractional quantum Hall effect in 2-dimensional double-layered electron systems. Via variational methods, we prove the existence and uniqueness of multiple vortices over a doubly periodic domain and the full plane. In the doubly periodic situation, explicit sufficient and necessary conditions are obtained that relate the size of the domain and the vortex numbers. For the full plane case, existence is established for all finite-energy solutions and exponential decay estimates are proved. Quantization phenomena of the magnetic flux are found in both cases.

  13. Intrinsic versus extrinsic anomalous Hall effect in ferromagnets.

    PubMed

    Onoda, Shigeki; Sugimoto, Naoyuki; Nagaosa, Naoto

    2006-09-22

    A unified theory of the anomalous Hall effect (AHE) is presented for multiband ferromagnetic metals with dilute impurities. In the clean limit, the AHE is mostly due to extrinsic skew scattering. When the Fermi level is located around anticrossing of band dispersions split by spin-orbit interaction, the intrinsic AHE to be calculated ab initio is resonantly enhanced by its nonperturbative nature, revealing the extrinsic-to-intrinsic crossover which occurs when the relaxation rate is comparable to the spin-orbit coupling.

  14. Redundant speed control for brushless Hall effect motor

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1973-01-01

    A speed control system for a brushless Hall effect device equipped direct current (D.C.) motor is described. Separate windings of the motor are powered by separate speed responsive power sources. A change in speed, upward or downward, because of the failure of a component of one of the power sources results in a corrective signal being generated in the other power source to supply an appropriate power level and polarity to one winding to cause the motor to be corrected in speed.

  15. Quantum spin Hall effect in nanostructures based on cadmium fluoride

    SciTech Connect

    Bagraev, N. T.; Guimbitskaya, O. N.; Klyachkin, L. E.; Koudryavtsev, A. A.; Malyarenko, A. M.; Romanov, V. V.; Ryskin, A. I.; Shcheulin, A. S.

    2010-10-15

    Tunneling current-voltage (I-V) characteristics and temperature dependences of static magnetic susceptibility and specific heat of the CdB{sub x}F{sub 2-x}/p-CdF{sub 2}-QW/CdB{sub x}F{sub 2-x} planar sandwich structures formed on the surface of an n-CdF{sub 2} crystal have been studied in order to identify superconducting properties of the CdB{sub x}F{sub 2-x} {delta} barriers confining the p-type CdF{sub 2} ultranarrow quantum well. Comparative analysis of current-voltage (I-V) characteristics and conductance-voltage dependences (measured at the temperatures, respectively, below and above the critical temperature of superconducting transition) indicates that there is an interrelation between quantization of supercurrent and dimensional quantization of holes in the p-CdF{sub 2} ultranarrow quantum well. It is noteworthy that detection of the Josephson peak of current in each hole subband is accompanied by the appearance of the spectrum of the multiple Andreev reflection (MAR). A high degree of spin polarization of holes in the edge channels along the perimeter of the p-CdF{sub 2} ultranarrow quantum well appears as a result of MAR and makes it possible to identify the quantum spin Hall effect I-V characteristics; this effect becomes pronounced in the case of detection of nonzero conductance at the zero voltage applied to the vertical gate in the Hall geometry of the experiment. Within the energy range of superconducting gap, the I-V characteristics of the spin transistor and quantum spin Hall effect are controlled by the MAR spectrum appearing as the voltage applied to the vertical gate is varied. Beyond the range of the superconducting gap, the observed I-V characteristic of the quantum spin Hall effect is represented by a quantum conductance staircase with a height of the steps equal to e{sub 2}/h; this height is interrelated with the Aharonov-Casher oscillations of longitudinal and depends on the voltage applied to the vertical gate.

  16. Characterization of Compounds Formed and added on surface of outdoor Seville city hall

    NASA Astrophysics Data System (ADS)

    Robador, Maria Dolores; Alcalde, Manuel; Arroyo, Fatima; Albardonedo, Antonio; Perez-Rodriguez, Jose Luis

    2013-04-01

    The building of the City Hall of Seville constitutes one of the samples more important of the architecture plateresque in Andalusia. For centuries the stone façade has suffered different stages of restoration. These treatments joined the effects of the environmental pollution are responsible for formation and deposition of different chemical compounds on the surface of the monuments. This study will supply information of the environmental effects on the rock, and the treatments that have been performed in previous interventions. The petrographic study showed the presence of a carbonate rock of thin grain constituted essentially by bioclastos and fine sand. The study by scanning electron microscopy showed a compact and continuous cover that suggested a polymer layer. The infrared spectroscopy study confirmed presence of acrylic resin. This resin covered sometimes a black crust constituted by alkanes characterized by mass spectrometry. In addition was found nodules constitutes by C, Ca, Fe, Si and Ca. These compounds appeared with gypsum and were attributed to environment contamination produced by combustion. Materials were observed that cover volumetric lagoons for losses of pieces or were used to fix fragments of stones that were free or displaced. The study by X-ray diffraction and infrared spectroscopy confirmed the presence of gypsum. Mortars constituted by calcite (60%) and inert material (40%; mainly quartz, feldspar and mica) were also characterized. In flute of the stone was found a black crust under which appeared a yellowish layer. The portable X-ray fluorescence and X-ray diffraction confirmed the presence of gypsum produced by environmental contamination. Gypsum was also found in the interior of the stone confirming that this mineral has emigrated due the high porosity of the stone. In some zones of the façade was detected some possible wall paintings. Cross-sections were prepared and studied by optical and scanning electron microscopes. A layer of

  17. Krypton charge exchange cross sections for Hall effect thruster models

    SciTech Connect

    Hause, Michael L.; Prince, Benjamin D.; Bemish, Raymond J.

    2013-04-28

    Following discharge from a Hall effect thruster, charge exchange occurs between ions and un-ionized propellant atoms. The low-energy cations produced can disturb operation of onboard instrumentation or the thruster itself. Charge-exchange cross sections for both singly and doubly charged propellant atoms are required to model these interactions. While xenon is the most common propellant currently used in Hall effect thrusters, other propellants are being considered, in particular, krypton. We present here guided-ion beam measurements and comparisons to semiclassical calculations for Kr{sup +} + Kr and Kr{sup 2+} + Kr cross sections. The measurements of symmetric Kr{sup +} + Kr charge exchange are in good agreement with both the calculations including spin-orbit effects and previous measurements. For the symmetric Kr{sup 2+} + Kr reaction, we present cross section measurements for center-of-mass energies between 1 eV and 300 eV, which spans energies not previously examined experimentally. These cross section measurements compare well with a simple one-electron transfer model. Finally, cross sections for the asymmetric Kr{sup 2+} + Kr {yields} Kr{sup +} + Kr{sup +} reaction show an onset near 12 eV, reaching cross sections near constant value of 1.6 A{sup 2} with an exception near 70-80 eV.

  18. Anomalous Hall effect in Fe/Au multilayers

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Li, P.; Wen, Y.; Zhao, C.; Zhang, J. W.; Manchon, A.; Mi, W. B.; Peng, Y.; Zhang, X. X.

    2016-07-01

    To understand the interfacial scattering effect on the anomalous Hall effect (AHE), we prepared multilayers of (Fe(36/n)nm/A u(12 /n )nm ) n using an e-beam evaporator. This structure design allowed us to investigate the effect of interfacial scattering on the AHE, while keeping the samples' thickness and composition unchanged. We measured the (magneto)transport properties of the samples in a wide temperature range (10-310 K) with magnetic fields up to 50 kOe. We found that the scaling between the anomalous Hall resistivity (ρAHE) and longitudinal resistivity (ρx x) can be roughly described by ρAHE˜ρxx γ with γ =2.65 ±0.10 and 1.90 ± 0.04 for samples from n =1 to n =4 and samples from n =4 to n =12 , respectively. Our quantitative analysis results showed that the interfacial scattering suppresses the contribution of the intrinsic mechanism and gives rise to a side-jump contribution.

  19. Spin Hall effects for cold atoms in a light induced gauge potential

    SciTech Connect

    Zhu, Shi-Liang; Fu, Hao; Wu, C.-J.; Zhang, S.-C.; Duan, L.-M. /Michigan U., MCTP

    2010-03-16

    We propose an experimental scheme to observe spin Hall effects with cold atoms in a light induced gauge potential. Under an appropriate configuration, the cold atoms moving in a spatially varying laser field experience an effective spin-dependent gauge potential. Through numerical simulation, we demonstrate that such a gauge field leads to observable spin Hall currents under realistic conditions. We also discuss the quantum spin Hall state in an optical lattice.

  20. Extrinsic spin Hall effect induced by resonant skew scattering in graphene.

    PubMed

    Ferreira, Aires; Rappoport, Tatiana G; Cazalilla, Miguel A; Castro Neto, A H

    2014-02-14

    We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.

  1. Extrinsic Spin Hall Effect Induced by Resonant Skew Scattering in Graphene

    NASA Astrophysics Data System (ADS)

    Ferreira, Aires; Rappoport, Tatiana G.; Cazalilla, Miguel A.; Castro Neto, A. H.

    2014-02-01

    We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.

  2. Hall effect in quantum critical charge-cluster glass

    DOE PAGES

    Bozovic, Ivan; Wu, Jie; Bollinger, Anthony T.; Sun, Yujie

    2016-04-04

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ≈ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ≈ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,more » Δx ≈ 0.00008. Furthermore, we observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.« less

  3. Anomalous Hall effect in NiPt thin films

    NASA Astrophysics Data System (ADS)

    Golod, T.; Rydh, A.; Krasnov, V. M.

    2011-08-01

    We have studied the Hall effect in sputtered NixPt1-x thin films with different Ni concentrations. Temperature, magnetic field, and angular dependencies are analyzed and the phase diagram of NiPt thin films is obtained. It is found that films with sub-critical Ni concentration exhibit cluster-glass behavior at low temperatures with a perpendicular magnetic anisotropy below the freezing temperature. Films with super-critical Ni concentration are ferromagnetic with parallel anisotropy. At the critical concentration the state of the film is strongly frustrated. Such films demonstrate canted magnetization with the easy axis rotating as a function of temperature. The magnetism appears via consecutive paramagnetic-cluster glass-ferromagnetic transitions, rather than a single second-order phase transition. But most remarkably, the extraordinary Hall effect changes sign at the critical concentration. We suggest that this is associated with a reconstruction of the electronic structure of the alloy at the normal metal-ferromagnet quantum phase transition.

  4. Spin current swapping and spin hall effect in disordered metals

    NASA Astrophysics Data System (ADS)

    Saidaoui, Hamed; Pauyac, Christian; Manchon, Aurelien

    2015-03-01

    The conversion of charge currents into spin currents via the spin Hall effect has attracted intense experimental and theoretical efforts lately, providing an efficient means to generate electric signals and manipulate the magnetization of single layers. More recently, it was proposed that spin-dependent scattering induced by spin-orbit coupled impurities also produces a so-called spin swapping, i.e. an exchange between the spin angular momentum and linear momentum of itinerant electrons. In this work, we investigate the nature of spin swapping and its interplay with extrinsic spin Hall effect and spin relaxation in finite size normal metals. We use two complementary methods based on non-equilibrium Green's function technique. The first method consists in rigorously deriving the drift-diffusion equation of the spin accumulation in the presence of spin-orbit coupled impurities from quantum kinetics using Wigner expansion. The second method is the real-space tight binding modeling of a finite system in the presence of spin-orbit coupled disorder.

  5. Extrinsic spin Hall effects measured with lateral spin valve structures

    NASA Astrophysics Data System (ADS)

    Niimi, Y.; Suzuki, H.; Kawanishi, Y.; Omori, Y.; Valet, T.; Fert, A.; Otani, Y.

    2014-02-01

    The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb, but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.

  6. Anyons and the quantum Hall effect-A pedagogical review

    SciTech Connect

    Stern, Ady

    2008-01-15

    The dichotomy between fermions and bosons is at the root of many physical phenomena, from metallic conduction of electricity to super-fluidity, and from the periodic table to coherent propagation of light. The dichotomy originates from the symmetry of the quantum mechanical wave function to the interchange of two identical particles. In systems that are confined to two spatial dimensions particles that are neither fermions nor bosons, coined 'anyons', may exist. The fractional quantum Hall effect offers an experimental system where this possibility is realized. In this paper we present the concept of anyons, we explain why the observation of the fractional quantum Hall effect almost forces the notion of anyons upon us, and we review several possible ways for a direct observation of the physics of anyons. Furthermore, we devote a large part of the paper to non-abelian anyons, motivating their existence from the point of view of trial wave functions, giving a simple exposition of their relation to conformal field theories, and reviewing several proposals for their direct observation.

  7. Quantum Anomalous Hall Effects and Topological Phase Transitions in Silicene

    NASA Astrophysics Data System (ADS)

    Ezawa, Motohiko

    2013-03-01

    Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice, which is experimentally manufactured this year. The low energy theory is described by Dirac electrons, but they are massive due to a relatively large spin-orbit interaction. I will explain the following properties of silicene: 1) The band structure is controllable by applying an electric field. Silicene undergoes a phase transition from a topological insulator to a band insulator by applying external electric field. 2) The topological phase transition can be detected experimentally by way of diamagnetism. 3) There is a novel circular dichroism and spinvalley selection rules by way of photon absorption. 4) Silicene shows a quantum anomalous Hall effects when ferromagnet is attached onto silicone. 5) Silicene shows a photo-induced quantum Hall effects when we apply strong laser onto silicene. 6) Single Dirac cone state emerges when we apply photo-irradiation and electric field, where the gap is open at the K point and closed at the K' point.

  8. Strong Spin Hall effect in PtMn

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Shi, Shengjie; Ralph, Daniel; Buhrman, Robert

    Recent reports indicate that certain metallic antiferromagnets (AFM) can exhibit a significant spin Hall effect. Here we report a large damping-like spin torque efficiency (ξDL) in PtMn/ferromagnet(FM) bilayer structures, determined from both FM-thickness-dependent spin-torque ferromagnetic resonance (ST-FMR), and harmonic response (HR) measurements of layers with perpendicular magnetic anisotropy (PMA). We find that ξDL can vary from <0.1 to >0.15, depending on the thickness of PtMn, the stacking order of the samples, and the choice of the FM material. The field-like spin torque efficiency (ξFL) is also quite variable, 0<|ξFL|<0.5. The large broadening of the ST-FMR linewidth suggests extra spin attenuation at the AFM/FM interface that is possibly due to intermixing. The PtMn/FeCoB/MgO structures that exhibit PMA have a comparatively low switching current density and an unusual asymmetric switching phase diagram. These results indicate that AFM PtMn has significant potential both for advancing the understanding the physics of the spin Hall effect in Pt alloys, and for enabling new spintronics functionality.

  9. Anomalous Hall effect in granular ferromagnetic metals and effects of weak localization.

    SciTech Connect

    Meier, H.; Kharitonov, M. Yu.; Efetov, K. B.; Materials Science Division; Ruhr-Univ. Bochum

    2009-01-01

    We theoretically investigate the anomalous Hall effect in a system of dense-packed ferromagnetic grains in the metallic regime. Using the formalism recently developed for the conventional Hall effect in granular metals, we calculate the residual anomalous Hall conductivity {sigma}{sub xy} and resistivity {rho}{sub xy} and weak localization corrections to them for both skew-scattering and side-jump mechanisms. We find that the scaling relation between {rho}{sub xy} and the longitudinal resistivity {rho}{sub xx} of the array does not hold, regardless of whether it is satisfied for the specific resistivities of the grain material or not. The weak localization corrections, however, are found to be in agreement with those for homogeneous metals. We discuss recent experimental data on the anomalous Hall effect in polycrystalline iron films in view of the obtained results.

  10. Large extrinsic spin Hall effect in Au-Cu alloys by extensive atomic disorder scattering

    NASA Astrophysics Data System (ADS)

    Zou, L. K.; Wang, S. H.; Zhang, Y.; Sun, J. R.; Cai, J. W.; Kang, S. S.

    2016-01-01

    Spin Hall angle, which denotes the conversion efficiency between spin and charge current, is a key parameter in the pure spin current phenomenon. The search for materials with large spin Hall angle is indeed important for scientific interest and potential application in spintronics. Here the large enhanced spin Hall effect (SHE) of Au-Cu alloy is reported by investigating the spin Seebeck effect, spin Hall anomalous Hall effect, and spin Hall magnetoresistance of the Y3F e5O12 (YIG)/A uxC u1 -x hybrid structure over the full composition. At the near equiatomic Au-Cu composition with maximum atomic disorder scattering, the spin Hall angle of the Au-Cu alloy increases by two to three times together with a moderate spin diffusion length in comparison with Au. The longitudinal spin Seebeck voltage and the spin Hall magnetoresistance ratio also increase by two to three times. More importantly, no evidence of anomalous Hall effect is observed in all YIG/Au-Cu samples, in contrast to the cases of other giant SHE materials Pt(Pd), Ta, and W. This behavior makes Au-Cu free from any suspicion of the magnetic proximity effect involved in the hybrid structure, and thus the Au-Cu alloy can be an ideal material for pure spin current study.

  11. Hall and ion slip effects on peristaltic flow of Jeffrey nanofluid with Joule heating

    NASA Astrophysics Data System (ADS)

    Hayat, T.; Shafique, Maryam; Tanveer, A.; Alsaedi, A.

    2016-06-01

    This paper addresses mixed convective peristaltic flow of Jeffrey nanofluid in a channel with complaint walls. The present investigation includes the viscous dissipation, thermal radiation and Joule heating. Hall and ion slip effects are also taken into account. Related problems through long wavelength and low Reynolds number are examined for stream function, temperature and concentration. Impacts of thermal radiation, Hartman number, Brownian motion parameter, thermophoresis, Joule heating, Hall and ion slip parameters are investigated in detail. It is observed that velocity increases and temperature decreases with Hall and ion slip parameters. Further the thermal radiation on temperature has qualitatively similar role to that of Hall and ion slip effects.

  12. Observation of room-temperature skyrmion Hall effect

    NASA Astrophysics Data System (ADS)

    Jiang, W.; Zhang, X.; Upadhyaya, P.; Zhang, W.; Yu, G.; Jungfleisch, M.; Fradin, F.; Pearson, J.; Tserkovnyak, Y.; Wang, K.; Heinonen, O.; Zhou, Y.; Te Velthuis, Suzanne; Hoffmann, A.

    The realization of room-temperature magnetic skyrmions is key to enabling the implementation of skyrmion-based spintronics. In this work, we present the efficient conversion of chiral stripe domains into Néel skyrmions through a geometrical constriction patterned in a Ta/CoFeB/TaOx trilayer film at room temperature. This is enabled by an interfacial Dzyaloshinskii-Moriya interaction, and laterally divergent current-induced spin-orbit torques. We further show the generation of magnetic skyrmions solely by the divergent spin-orbit torques through a nonmagnetic point contact. By increasing the current density, we observe the skyrmion Hall effect - that is the accumulation of skyrmions at one side of the device. The related Hall angle for skyrmion motion is also revealed under an ac driving current. Financial support for the work at Argonne came from Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division, work at UCLA was supported by TANMS.

  13. Fractionally charged skyrmions in fractional quantum Hall effect

    DOE PAGES

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeemanmore » energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.« less

  14. Electronic simulation of a multiterminal quantum Hall effect device

    NASA Astrophysics Data System (ADS)

    Sosso, A.; Capra, P. P.

    1999-04-01

    A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricketts and Kemeny electrical model of multiterminal quantum Hall effect (QHE) devices. By means of the new equivalent circuit, commercial software for electronic circuit analysis can be used to study a QHE measurement system. Moreover, it can be easily implemented, and we were able to build a circuit that simulates the electrical behavior of a QHE device. Particular care was taken in the design to reduce the effect of parasitic capacitances, which act as loads connected to the device terminals. Bootstrap buffers have been adopted to significantly reduce the capacitance of input stage. The small residual loading effect can be calculated and eliminated, allowing simulation of a QHE device with good accuracy.

  15. Quantum Hall effect in a system with an electron reservoir

    NASA Astrophysics Data System (ADS)

    Dorozhkin, S. I.

    2016-04-01

    Precise measurements of the magnetic-field and gate-voltage dependences of the capacitance of a field-effect transistor with an electron system in a wide GaAs quantum well have been carried out. It has been found that the capacitance minima caused by the gaps in the Landau spectrum of the electron system become anomalously wide when two size-quantization subbands are occupied. The effect is explained by retention of the chemical potential in the gap between the Landau levels of one of the subbands owing to redistribution of electrons between the subbands under a change in the magnetic field. The calculation taking into account this redistribution has been performed in a model of the electron system formed by two two-dimensional electron layers. The calculation results describe both the wide capacitance features and the observed disappearance of certain quantum Hall effect states.

  16. Anomalous Hall effect in magnetic disordered alloys: Effects of spin orbital coupling

    SciTech Connect

    Ma, L.; Gao, W. B.; Zhou, S. M.; Shi, Z.; He, P.; Miao, J.; Jiang, Y.

    2013-12-28

    For disordered ternary Fe{sub 0.5}(Pd{sub 1−x}Pt{sub x}){sub 0.5} alloy films, the anomalous Hall effect obeys the conventional scaling law ρ{sub AH}=aρ{sub xx}+bρ{sub xx}{sup 2} with the longitudinal resistivity ρ{sub xx} and anomalous Hall resistivity ρ{sub AH}. Contributed by the intrinsic term and the extrinsic side-jump one, the scattering-independent anomalous Hall conductivity b increases with increasing Pt/Pd concentration. In contrast, the skew scattering parameter a is mainly influenced by the residual resistivity. The present results will facilitate the theoretical studies of the anomalous Hall effect in magnetic disordered alloys.

  17. Supersymmetric Quantum-Hall Effect on a Fuzzy Supersphere

    SciTech Connect

    Hasebe, Kazuki

    2005-05-27

    Supersymmetric quantum-Hall liquids are constructed on a supersphere in a supermonopole background. We derive a supersymmetric generalization of the Laughlin wave function, which is a ground state of a hard-core OSp(1 vertical bar 2) invariant Hamiltonian. We also present excited topological objects, which are fractionally charged deficits made by super Hall currents. Several relations between quantum-Hall systems and their supersymmetric extensions are discussed.

  18. Perturbation analysis of ionization oscillations in Hall effect thrusters

    NASA Astrophysics Data System (ADS)

    Hara, Kentaro; Sekerak, Michael J.; Boyd, Iain D.; Gallimore, Alec D.

    2014-12-01

    A perturbation analysis of ionization oscillations, which cause low frequency oscillations of the discharge plasma, in Hall effect thrusters is presented including the electron energy equation in addition to heavy-species transport. Excitation and stabilization of such oscillations, often called the breathing mode, are discussed in terms of the growth rate obtained from the linear perturbation equations of the discharge plasma. The instability induced from the ionization occurs only when the perturbation in the electron energy is included while the neutral atom flow contributes to the damping of the oscillation. Effects of the electron energy loss mechanisms such as wall heat loss, inelastic collisions, and convective heat flux are discussed. It is shown that the ionization oscillations can be damped when the electron transport is reduced and the electron temperature increases so that the energy loss to the wall stabilizes the ionization instability.

  19. The quantum anomalous Hall effect in kagomé lattices

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi-Yong

    2011-09-01

    The quantum anomalous Hall (QAH) effect in kagomé lattices is investigated in the presence of both Rashba spin-orbit coupling and an exchange field. In addition to the gap at the Dirac points as found in graphene, a new topological energy gap is opened at the Γ point. With the Fermi energy lying in the first gap, the Chern number 𝒞 = 2 as in graphene, whereas with it lying in the second one, 𝒞 = 1. The distribution of Berry curvature is obtained to reveal the nontrivial topological properties in momentum space. For stripes with ‘armchair’ and ‘zigzag’ edges, the topological characteristics of gapless edge states on the genus g = 2 Riemann surface are studied. The obtained nonzero winding numbers also demonstrate the QAH effect.

  20. Quantum Anomalous Hall Effect in Graphene-based Heterostructure.

    PubMed

    Zhang, Jiayong; Zhao, Bao; Yao, Yugui; Yang, Zhongqin

    2015-01-01

    Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.

  1. Photonic hall effect in ferrofluids: theory and experiments

    PubMed

    Lacoste; Donatini; Neveu; Serughetti; Van Tiggelen BA

    2000-09-01

    An experimental and theoretical study on the photonic Hall effect (PHE) in liquid and gelled samples of ferrofluids is presented. The ferrofluids are aqueous colloidal suspensions of Fe2CoO4 particles, which can be considered as anisotropic and absorbing Rayleigh scatterers. The PHE is found to be produced by the orientation of the magnetic moments of the particles, as is also the case for the Faraday effect. The dependence of the PHE with respect to the concentration of the scatterers, the magnetic field, and the polarization of the incident light is measured in liquid and in gelled samples, and is compared to a simple model based on the use of a scattering matrix and the single scattering approximation.

  2. Spin Hall effect of light in photon tunneling

    SciTech Connect

    Luo Hailu; Wen Shuangchun; Shu Weixing; Fan Dianyuan

    2010-10-15

    We resolve the breakdown of angular momentum conservation on two-dimensional photon tunneling by considering the spin Hall effect (SHE) of light. This effect manifests itself as polarization-dependent transverse shifts of the field centroid when a classic wave packet tunnels through a prism-air-prism barrier. For the left or the right circularly polarized component, the transverse shift can be modulated by altering the refractive index gradient associated with the two prisms. We find that the SHE in conventional beam refraction can be evidently enhanced via photon tunneling mechanism. The transverse spatial shift is governed by the total angular momentum conservation law, while the transverse angular shift is governed by the total linear momentum conservation law. These findings open the possibility for developing new nanophotonic devices and can be extrapolated to other physical systems.

  3. Perturbation analysis of ionization oscillations in Hall effect thrusters

    SciTech Connect

    Hara, Kentaro Sekerak, Michael J.; Boyd, Iain D.; Gallimore, Alec D.

    2014-12-15

    A perturbation analysis of ionization oscillations, which cause low frequency oscillations of the discharge plasma, in Hall effect thrusters is presented including the electron energy equation in addition to heavy-species transport. Excitation and stabilization of such oscillations, often called the breathing mode, are discussed in terms of the growth rate obtained from the linear perturbation equations of the discharge plasma. The instability induced from the ionization occurs only when the perturbation in the electron energy is included while the neutral atom flow contributes to the damping of the oscillation. Effects of the electron energy loss mechanisms such as wall heat loss, inelastic collisions, and convective heat flux are discussed. It is shown that the ionization oscillations can be damped when the electron transport is reduced and the electron temperature increases so that the energy loss to the wall stabilizes the ionization instability.

  4. Experimental Verification of the Hall Effect during Magnetic Reconnection in a Laboratory Plasma

    SciTech Connect

    Yang Ren; Masaaki Yamada; Stefan Gerhardt; Hantao Ji; Russell Kulsrud; Aleksey Kuritsyn

    2005-06-16

    In this letter we report a clear and unambiguous observation of the out-of-plane quadrupole magnetic field suggested by numerical simulations in the reconnecting current sheet in the Magnetic Reconnection Experiment (MRX). Measurements show that the Hall effect is large in collisionless regime and becomes small as the collisionality increases, indicating that the Hall effect plays an important role in collisionless reconnection.

  5. Giant gap quantum spin Hall effect and valley-polarized quantum anomalous Hall effect in cyanided bismuth bilayers

    NASA Astrophysics Data System (ADS)

    Ji, Wei-xiao; Zhang, Chang-wen; Ding, Meng; Zhang, Bao-min; Li, Ping; Li, Feng; Ren, Miao-juan; Wang, Pei-ji; Zhang, Run-wu; Hu, Shu-jun; Yan, Shi-shen

    2016-08-01

    Bismuth (Bi) has attracted a great deal of attention for its strongest spin–orbit coupling (SOC) strength among main group elements. Although quantum anomalous Hall (QAH) state is predicted in half-hydrogenated Bi honeycomb monolayers Bi2H, the experimental results are still missing. Halogen atoms (X = F, Cl and Br) were also frequently used as modifications, but Bi2X films show a frustrating metallic character that masks the QAH effects. Here, first-principle calculations are performed to predict the full-cyanided bismuthene (Bi2(CN)2) as 2D topological insulator supporting quantum spin Hall state with a record large gap up to 1.10 eV, and more importantly, half-cyanogen saturated bismuthene (Bi2(CN)) as a Chern insulator supporting a valley-polarized QAH state, with a Curie temperature to be 164 K, as well as a large gap reaching 0.348 eV which could be further tuned by bi-axial strain and SOC strength. Our findings provide an appropriate and flexible material family candidate for spintronic and valleytronic devices.

  6. Giant gap quantum spin Hall effect and valley-polarized quantum anomalous Hall effect in cyanided bismuth bilayers

    NASA Astrophysics Data System (ADS)

    Ji, Wei-xiao; Zhang, Chang-wen; Ding, Meng; Zhang, Bao-min; Li, Ping; Li, Feng; Ren, Miao-juan; Wang, Pei-ji; Zhang, Run-wu; Hu, Shu-jun; Yan, Shi-shen

    2016-08-01

    Bismuth (Bi) has attracted a great deal of attention for its strongest spin-orbit coupling (SOC) strength among main group elements. Although quantum anomalous Hall (QAH) state is predicted in half-hydrogenated Bi honeycomb monolayers Bi2H, the experimental results are still missing. Halogen atoms (X = F, Cl and Br) were also frequently used as modifications, but Bi2X films show a frustrating metallic character that masks the QAH effects. Here, first-principle calculations are performed to predict the full-cyanided bismuthene (Bi2(CN)2) as 2D topological insulator supporting quantum spin Hall state with a record large gap up to 1.10 eV, and more importantly, half-cyanogen saturated bismuthene (Bi2(CN)) as a Chern insulator supporting a valley-polarized QAH state, with a Curie temperature to be 164 K, as well as a large gap reaching 0.348 eV which could be further tuned by bi-axial strain and SOC strength. Our findings provide an appropriate and flexible material family candidate for spintronic and valleytronic devices.

  7. Theory of Spin Hall Effect in GaAs

    NASA Astrophysics Data System (ADS)

    Engel, Hans-Andreas

    2006-03-01

    In the spin Hall effect, an electric current in a system with spin-orbit coupling induces a transverse spin current which leads to non-equilibrium spin accumulation near sample boundaries. Generating and manipulating non-equilibrium spin magnetization by electric fields is one of the most desirable goals of semiconductor spintronics, because electric fields have potentialities for accessing individual spins at nanometer scales. In this talk, I review the different spin-orbit coupling mechanisms in direct gap semiconductors and the implications of these mechanisms for the spin Hall effect. In particular, we recently developed a theory that accounts for spin-orbit coupling at charged impurities. This coupling leads to extrinsic spin currents that contain skew scattering and side jump contribution [1]. Applying our theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [2]. Also, such contributions are important for p-doped GaAs. Furthermore, we analyzed the effect of intrinsic spin-orbit coupling in the presence of anisotropic impurity scattering, and found that, somewhat surprisingly, an electrical field can lead to a bulk magnetization component perpendicular to both the spin-orbit field and an external magnetic field. These works have been done in collaboration with B.I. Halperin, E.I. Rashba, and A.A. Burkov. [1] H.-A. Engel, B.I. Halperin, and E.I. Rashba, Phys. Rev.Lett. 95, 166605 (2005). [2] Y.K. Kato, R.C. Myers, A.C. Gossard, and D.D. Awschalom, Science 306, 1910 (2004).

  8. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    PubMed Central

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  9. Microbeads detection using spin-valve planar Hall effect sensors.

    PubMed

    Volmer, M; Avram, M

    2012-09-01

    In this paper we present a micromagnetic approach to describe the detection of magnetic nanobeads using planar Hall effect sensors. The magnetic beads polarized by a dc magnetic field generate a field, which can affect the magnetization state of spin-valve sensor, leading in principle, to a detectable signal. For magnetic nanobeads we assumed a superparamagnetic behaviour. Three detection geometries are discussed and some specific behaviours were highlighted by micromagnetic simulations. We found that when the polarising field is applied parallel with the sensor surface a very weak signal can be obtained. This is because at working fields, for which the magnetic nanobeads are magnetised, the sensor saturates. We identified other setups that can overcome this shortcoming and deliver a net signal.

  10. Quantifying of magnetically separated particles using Hall-effect sensing

    NASA Astrophysics Data System (ADS)

    Mehasni, R.; Latreche, M. E.; Feliachi, M.

    2007-08-01

    In this paper, we present a modeling of a captured ferromagnetic particles quantifying method based on the detection and evaluation of the magnetic field variation caused by the particle static buildup. The detecting element is a Hall-effect sensor (probe) associated to the particle capture element which is an electromagnet with iron core. From a known value of the magnetic field measured at the particle static buildup locality, we predict the particle global concentration in the treated material sample (powder or liquid). This prediction is achieved by solving the inverse problem for the captured particles magnetic field variation. Such a resolution is based on an iterative resolution of the forward problem until obtaining the global particle concentration related to the measured value of the field variation. Because an exact value can not be obtained we retain the value that minimizes an error function. To minimize such a function we have used the Tabu searching method.

  11. Determination of Avogadro's number via the Hall effect

    NASA Astrophysics Data System (ADS)

    Houari, Ahmed

    2007-03-01

    Many researchers and lecturers have reported that the concept of the mole and Avogadro's number are frequently misunderstood by first-year science students. For this reason, it is highly recommended to introduce this fundamental number to high school and freshman science students as clearly as possible. Therefore, it is pedagogically very useful to diversify the methods of determination of Avogadro's number which are based on basic physics phenomena accessible to those classes of students. Along these lines, I will describe here an unusual method based on the classical Hall effect for determining Avogadro's number. The present method is not relevant for its accuracy but mainly for its simplicity and its 'cleanness' compared to the usual electrochemical method used at this instruction level. In addition, this method provides an extra useful test for the validity of the free electron model.

  12. Domain wall assisted GMR head with spin-Hall effect

    NASA Astrophysics Data System (ADS)

    Arun, R.; Sabareesan, P.; Daniel, M.

    2016-05-01

    We theoretically study the dynamics of a field induced domain wall in the Py/Pt bi-layer structure in the presence of spin-Hall effect (SHE) by solving the Landau-Lifshitz-Gilbert (LLG) equation along with the adiabatic, nonadiabatic and SHE spin-transfer torques (STTs). It is observed that a weak magnetic field moves the domain wall with high velocity in the presence of SHE and the direction of the velocity is changed by changing the direction of the weak field. The numerical results show that the magnetization of the ferromagnetic layer can be reversed quickly through domain wall motion by changing the direction of a weak external field in the presence of SHE while the direction of current is fixed. The SHE reduces the magnetization reversal time of 1000 nm length strip by 14.7 ns. This study is extended to model a domain wall based GMR (Giant Magnetoresistance) read head with SHE.

  13. Matrix method analysis of quantum Hall effect device connections

    NASA Astrophysics Data System (ADS)

    Ortolano, M.; Callegaro, L.

    2012-02-01

    The modelling of electrical connections of single, or several, multiterminal quantum Hall effect (QHE) devices is relevant for electrical metrology: it is known, in fact, that certain particular connections allow (i) the realization of multiples or fractions of the quantized resistance, or (ii) the rejection of stray impedances, so that the configuration maintains the status of quantum standard. Ricketts-Kemeny and Delahaye equivalent circuits are known to be accurate models of the QHE: however, the numerical or analytical solution of electrical networks including these equivalent circuits can be difficult. In this paper, we introduce a method of analysis based on the representation of a QHE device by means of the indefinite admittance matrix: external connections are then represented with another matrix, easily written by inspection. Some examples, including the solution of double- and triple-series connections, are shown.

  14. Magnetic bilayer-skyrmions without skyrmion Hall effect.

    PubMed

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-01-01

    Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed. PMID:26782905

  15. Magnetic bilayer-skyrmions without skyrmion Hall effect

    NASA Astrophysics Data System (ADS)

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-01-01

    Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

  16. Spin Hall effect of light measured by interferometry.

    PubMed

    Prajapati, Chandravati; Ranganathan, D; Joseph, Joby

    2013-07-15

    We demonstrate a experimental method to measure the spin Hall effect of light (SHEL), which is based on the interference between two orthogonal circularly polarized beams with the help of a polarizer. Our method can measure the SHEL across the entire exit pupil, not only at the centroid as is the case with earlier methods, and hence one can scan the transverse section of the beam. We measured the SHEL of an aluminium mirror and a glass plate using a He-Ne laser at wavelength 633 nm, for incidence angles varying from 22° to 70°. The experimental results are in good agreement with theory. We also measured the shift across the transverse section of a Gaussian beam using same method.

  17. Robustness of topological Hall effect of nontrivial spin textures

    NASA Astrophysics Data System (ADS)

    Jalil, Mansoor B. A.; Tan, Seng Ghee

    2014-05-01

    We analyze the topological Hall conductivity (THC) of topologically nontrivial spin textures like magnetic vortices and skyrmions and investigate its possible application in the readback for magnetic memory based on those spin textures. Under adiabatic conditions, such spin textures would theoretically yield quantized THC values, which are related to topological invariants such as the winding number and polarity, and as such are insensitive to fluctuations and smooth deformations. However, in a practical setting, the finite size of spin texture elements and the influence of edges may cause them to deviate from their ideal configurations. We calculate the degree of robustness of the THC output in practical magnetic memories in the presence of edge and finite size effects.

  18. Hall Current Effects in Mean-Field Dynamo Theory

    NASA Astrophysics Data System (ADS)

    Lingam, Manasvi; Bhattacharjee, Amitava

    2016-09-01

    The role of the Hall term on large-scale dynamo action is investigated by means of the first-order smoothing approximation. It is shown that the standard α coefficient is altered, and is zero when a specific double Beltrami state is attained, in contrast to the Alfvénic state for magnetohydrodynamical dynamos. The β coefficient is no longer positive definite, and thereby enables dynamo action even if α-quenching were to operate. The similarities and differences with the (magnetic) shear-current effect are pointed out, and a mechanism that may be potentially responsible for β \\lt 0 is advanced. The results are compared against previous studies, and their astrophysical relevance is also highlighted.

  19. Quantum spin Hall effect induced by electric field in silicene

    NASA Astrophysics Data System (ADS)

    An, Xing-Tao; Zhang, Yan-Yang; Liu, Jian-Jun; Li, Shu-Shen

    2013-01-01

    We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

  20. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure.

    PubMed

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  1. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  2. Crossed Andreev effects in two-dimensional quantum Hall systems

    NASA Astrophysics Data System (ADS)

    Hou, Zhe; Xing, Yanxia; Guo, Ai-Min; Sun, Qing-Feng

    2016-08-01

    We study the crossed Andreev effects in two-dimensional conductor/superconductor hybrid systems under a perpendicular magnetic field. Both a graphene/superconductor hybrid system and an electron gas/superconductor one are considered. It is shown that an exclusive crossed Andreev reflection, with other Andreev reflections being completely suppressed, is obtained in a high magnetic field because of the chiral edge states in the quantum Hall regime. Importantly, the exclusive crossed Andreev reflection not only holds for a wide range of system parameters, e.g., the size of system, the width of central superconductor, and the quality of coupling between the graphene and the superconductor, but also is very robust against disorder. When the applied bias is within the superconductor gap, a robust Cooper-pair splitting process with high-efficiency can be realized in this system.

  3. Magnetic bilayer-skyrmions without skyrmion Hall effect

    PubMed Central

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-01-01

    Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed. PMID:26782905

  4. Hořava-Lifshitz gravity and effective theory of the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Wu, Chaolun; Wu, Shao-Feng

    2015-01-01

    We show that Hořava-Lifshitz gravity theory can be employed as a covariant framework to build an effective field theory for the fractional quantum Hall effect that respects all the spacetime symmetries such as non-relativistic diffeomorphism invariance and anisotropic Weyl invariance as well as the gauge symmetry. The key to this formalism is a set of correspondence relations that maps all the field degrees of freedom in the Hořava-Lifshitz gravity theory to external background (source) fields among others in the effective action of the quantum Hall effect, according to their symmetry transformation properties. We originally derive the map as a holographic dictionary, but its form is independent of the existence of holographic duality. This paves the way for the application of Hořava-Lifshitz holography on fractional quantum Hall effect. Using the simplest holographic Chern-Simons model, we compute the low energy effective action at leading orders and show that it captures universal electromagnetic and geometric properties of quantum Hall states, including the Wen-Zee shift, Hall viscosity, angular momentum density and their relations. We identify the shift function in Hořava-Lifshitz gravity theory as minus of guiding center velocity and conjugate to guiding center momentum. This enables us to distinguish guiding center angular momentum density from the internal one, which is the sum of Landau orbit spin and intrinsic (topological) spin of the composite particles. Our effective action shows that Hall viscosity is minus half of the internal angular momentum density and proportional to Wen-Zee shift, and Hall bulk viscosity is half of the guiding center angular momentum density.

  5. Hall Effect Thruster Plume Contamination and Erosion Study

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.

    2000-01-01

    The objective of the Hall effect thruster plume contamination and erosion study was to evaluate the impact of a xenon ion plume on various samples placed in the vicinity of a Hall effect thruster for a continuous 100 hour exposure. NASA Glenn Research Center was responsible for the pre- and post-test evaluation of three sample types placed around the thruster: solar cell cover glass, RTV silicone, and Kapton(R). Mass and profilometer), were used to identify the degree of deposition and/or erosion on the solar cell cover glass, RTV silicone, and Kapton@ samples. Transmittance, reflectance, solar absorptance, and room temperature emittance were used to identify the degree of performance degradation of the solar cell cover glass samples alone. Auger spectroscopy was used to identify the chemical constituents found on the surface of the exposed solar cell cover glass samples. Chemical analysis indicated some boron nitride contamination on the samples, from boron nitride insulators used in the body of the thruster. However, erosion outweighted contamination. All samples exhibited some degree of erosion. with the most erosion occurring near the centerline of the plume and the least occurring at the +/- 90 deg positions. For the solar cell cover glass samples, erosion progressed through the antireflective coating and into the microsheet glass itself. Erosion occurred in the solar cell cover glass, RTV silicone and Kapton(R) at different rates. All optical properties changed with the degree of erosion, with solar absorptance and room temperature emittance increasing with erosion. The transmittance of some samples decreased while the reflectance of some samples increased and others decreased. All results are consistent with an energetic plume of xenon ions serving as a source for erosion.

  6. Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime

    NASA Astrophysics Data System (ADS)

    Sagasta, Edurne; Omori, Yasutomo; Isasa, Miren; Gradhand, Martin; Hueso, Luis E.; Niimi, Yasuhiro; Otani, YoshiChika; Casanova, Fèlix

    2016-08-01

    We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Hall conductivity (σSHint=1600 ±150 Ω-1c m-1) for Pt in the full range studied which is in good agreement with theory. We have obtained the crossover between the moderately dirty and the superclean scaling regimes of the spin Hall effect by tuning the conductivity. This is equivalent to that obtained for the anomalous Hall effect. Our results explain the spread of the spin Hall angle values in the literature and find a route to maximize this important parameter.

  7. Domain-wall depinning dominated by the Spin Hall effect

    NASA Astrophysics Data System (ADS)

    Swagten, Henk

    2013-03-01

    Current induced domain wall motion (CIDWM) in perpendicular materials is believed to be very efficient. We will show that the Spin Hall effect (SHE) provides a radically new mechanism for CIDWM in these systems. Using focused-ion-beam irradiation we are able to stabilize and pin two DWs in a Pt/Co/Pt nanowire. By depinning the DWs under the application of a perpendicular field as well as an injected charge current and in-plane magnetic field, we are able to disentangle the contributions to DW motion originating from (1) conventional spin transfer torques that act on magnetization gradients and (2) from the hitherto unexplored SHE torques. The fact the perpendicular depinning field H as a function of charge current J for the two DWs has equal slope dH/dJ, as well as a sign change of the slope when we change the polarity of the DWs, directly proves the dominance of the SHE contribution. To further proof that the SHE is governing the depinning process, we have tuned the internal spin structure of the DW from Bloch to Néel, by varying the in-plane field parallel to the current, and find that the influence of current on the depinning is highest when the DW has the Néel structure. This behavior is verified by macrospin simulations, which can quantitatively explain our data. As a final compelling evidence, we have varied the thickness of the bottom and top Pt, showing that we are able to tune the spin Hall currents originating from the nonmagnetic Pt layers. The work is part of the research programme of the Foundation for Fundamental Research on Matter (FOM), which is part of the Netherlands Organisation for Scientific Research (NWO).

  8. Anomalous hall effect in the (in,mn)sb dilute magnetic semiconductor.

    PubMed

    Mihály, G; Csontos, M; Bordács, S; Kézsmárki, I; Wojtowicz, T; Liu, X; Jankó, B; Furdyna, J K

    2008-03-14

    High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

  9. Effective Field Theory of Fractional Quantized Hall Nematics

    SciTech Connect

    Mulligan, Michael; Nayak, Chetan; Kachru, Shamit; /Stanford U., Phys. Dept. /SLAC

    2012-06-06

    We present a Landau-Ginzburg theory for a fractional quantized Hall nematic state and the transition to it from an isotropic fractional quantum Hall state. This justifies Lifshitz-Chern-Simons theory - which is shown to be its dual - on a more microscopic basis and enables us to compute a ground state wave function in the symmetry-broken phase. In such a state of matter, the Hall resistance remains quantized while the longitudinal DC resistivity due to thermally-excited quasiparticles is anisotropic. We interpret recent experiments at Landau level filling factor {nu} = 7/3 in terms of our theory.

  10. All electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects.

    SciTech Connect

    Zhang, Wei; Jungfleisch, Matthias B.; Freimuth, Frank; Jiang, Wanjun; Sklenar, Joseph; Pearson, John E.; Ketterson, John B.; Mokrousov, Yuri; Hoffmann, Axel

    2015-10-06

    We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We find a growth-orientation dependence of the spin torques by studying epitaxial samples, which may be correlated to the anisotropy of the spin Hall effect. The observed anisotropy is consistent with first-principles calculations on the intrinsic spin Hall effect. Our work suggests large tunable spin-orbit effects in magnetically-ordered materials.

  11. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  12. Near-Surface Plasma Characterization of the 12.5-kW NASA TDU1 Hall Thruster

    NASA Technical Reports Server (NTRS)

    Shastry, Rohit; Huang, Wensheng; Kamhawi, Hani

    2015-01-01

    To advance the state-of-the-art in Hall thruster technology, NASA is developing a 12.5-kW, high-specific-impulse, high-throughput thruster for the Solar Electric Propulsion Technology Demonstration Mission. In order to meet the demanding lifetime requirements of potential missions such as the Asteroid Redirect Robotic Mission, magnetic shielding was incorporated into the thruster design. Two units of the resulting thruster, called the Hall Effect Rocket with Magnetic Shielding (HERMeS), were fabricated and are presently being characterized. The first of these units, designated the Technology Development Unit 1 (TDU1), has undergone extensive performance and thermal characterization at NASA Glenn Research Center. A preliminary lifetime assessment was conducted by characterizing the degree of magnetic shielding within the thruster. This characterization was accomplished by placing eight flush-mounted Langmuir probes within each discharge channel wall and measuring the local plasma potential and electron temperature at various axial locations. Measured properties indicate a high degree of magnetic shielding across the throttle table, with plasma potential variations along each channel wall being less than or equal to 5 eV and electron temperatures being maintained at less than or equal to 5 eV, even at 800 V discharge voltage near the thruster exit plane. These properties indicate that ion impact energies within the HERMeS will not exceed 26 eV, which is below the expected sputtering threshold energy for boron nitride. Parametric studies that varied the facility backpressure and magnetic field strength at 300 V, 9.4 kW, illustrate that the plasma potential and electron temperature are insensitive to these parameters, with shielding being maintained at facility pressures 3X higher and magnetic field strengths 2.5X higher than nominal conditions. Overall, the preliminary lifetime assessment indicates a high degree of shielding within the HERMeS TDU1, effectively

  13. Framing Anomaly in the Effective Theory of the Fractional Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G.; Fradkin, Eduardo

    2015-01-01

    We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

  14. Framing anomaly in the effective theory of the fractional quantum Hall effect.

    PubMed

    Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

    2015-01-01

    We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

  15. Electrical characterization of all-optical helicity-dependent switching in ferromagnetic Hall crosses

    NASA Astrophysics Data System (ADS)

    El Hadri, M. S.; Pirro, P.; Lambert, C.-H.; Bergeard, N.; Petit-Watelot, S.; Hehn, M.; Malinowski, G.; Montaigne, F.; Quessab, Y.; Medapalli, R.; Fullerton, E. E.; Mangin, S.

    2016-02-01

    We present an experimental study of all-optical helicity-dependent switching (AO-HDS) of ferromagnetic Pt/Co/Pt heterostructures with perpendicular magnetic anisotropy. The sample is patterned into a Hall cross and the AO-HDS is measured via the anomalous Hall effect. This all-electrical probing of the magnetization during AO-HDS enables a statistical quantification of the switching ratio for different laser parameters, such as the threshold power to achieve AO-HDS and the exposure time needed to reach complete switching at a given laser power. We find that the AO-HDS is a cumulative process, a certain number of optical pulses is needed to obtain a full and reproducible helicity-dependent switching. The deterministic switching of the ferromagnetic Pt/Co/Pt Hall cross provides a full "opto-spintronic device," where the remanent magnetization can be all-optically and reproducibly written and erased without the need of an external magnetic field.

  16. High efficiency Hall effect micro-biosensor platform for detection of magnetically labeled biomolecules.

    PubMed

    Sandhu, Adarsh; Kumagai, Yoshimichi; Lapicki, Adam; Sakamoto, Satoshi; Abe, Masanori; Handa, Hiroshi

    2007-04-15

    Detection of magnetically labeled biomolecules using micro-Hall biosensors is a promising method for monitoring biomolecular recognition processes. The measurement efficiency of standard systems is limited by the time taken for magnetic beads to reach the sensing area of the Hall devices. Here, micro-current lines were integrated with Hall effect structures to manipulate the position of magnetic beads via field gradients generated by localized currents flowing in the current lines. Beads were accumulated onto the sensor surface within seconds of passing currents through the current lines. Real-time detection of magnetic beads using current lines integrated with Hall biosensors was achieved. These results are promising in establishing Hall biosensor platforms as efficient and inexpensive means of monitoring biomolecular reactions for medical applications.

  17. Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature.

    PubMed

    Nakatsuji, Satoru; Kiyohara, Naoki; Higo, Tomoya

    2015-11-12

    In ferromagnetic conductors, an electric current may induce a transverse voltage drop in zero applied magnetic field: this anomalous Hall effect is observed to be proportional to magnetization, and thus is not usually seen in antiferromagnets in zero field. Recent developments in theory and experiment have provided a framework for understanding the anomalous Hall effect using Berry-phase concepts, and this perspective has led to predictions that, under certain conditions, a large anomalous Hall effect may appear in spin liquids and antiferromagnets without net spin magnetization. Although such a spontaneous Hall effect has now been observed in a spin liquid state, a zero-field anomalous Hall effect has hitherto not been reported for antiferromagnets. Here we report empirical evidence for a large anomalous Hall effect in an antiferromagnet that has vanishingly small magnetization. In particular, we find that Mn3Sn, an antiferromagnet that has a non-collinear 120-degree spin order, exhibits a large anomalous Hall conductivity of around 20 per ohm per centimetre at room temperature and more than 100 per ohm per centimetre at low temperatures, reaching the same order of magnitude as in ferromagnetic metals. Notably, the chiral antiferromagnetic state has a very weak and soft ferromagnetic moment of about 0.002 Bohr magnetons per Mn atom (refs 10, 12), allowing us to switch the sign of the Hall effect with a small magnetic field of around a few hundred oersted. This soft response of the large anomalous Hall effect could be useful for various applications including spintronics--for example, to develop a memory device that produces almost no perturbing stray fields.

  18. Hall effects on the steady structure of the rotational layer at the dayside magnetopause

    SciTech Connect

    Westerberg, Lars G.; Aakerstedt, Hans O.

    2007-10-15

    The influence of the Hall term in the generalized Ohm's law on the large-scale plasma flow during conditions of ongoing magnetic reconnection at the dayside magnetopause (MP) is investigated. Of special interest is the plasma flow behavior during the transition of the MP transition layer as the Hall effect grows in proportion to the viscous-resistive effects. The governing equations are solved approximately by an ordinary perturbation expansion in orders of large Reynolds and Lundqvist numbers. It is shown that the flow pattern is strongly dependent on the magnitude of the Hall parameter; as it approaches zero, the viscous-resistive solution is obtained, while for an ordering of the same magnitude as the resistivity/viscosity, the Hall effect begins to affect the flow structure severely. For an increasing value on the Hall parameter, oscillations are brought into the system, an effect that is enhanced with the magnitude of the Hall parameter. Furthermore, it is shown that as the Hall effect begins to dominate, the transition layer thickens.

  19. Signal asymmetries in the anomalous Hall effect of bilayer magnetic nanostructures

    NASA Astrophysics Data System (ADS)

    Griffiths, R. A.; Nutter, P. W.; Neumann, A.; Thönnißen, C.; Wilhelm, E.-S.; Thomson, T.

    2016-09-01

    We propose an interpretation for the signal asymmetry observed in anomalous Hall effect (AHE) transport measurements of magnetic nanostructures patterned from bilayer magnetic thin films. Experimental data and simulations demonstrate that the signal asymmetry observed in hysteresis loops arises due to a combination of the anomalous Hall effect together with a contribution from longitudinal giant magnetoresistance (GMR). The effect shows a high-sensitivity to nanoscale misalignments in Hall cross geometry. Consequently, the complex nature of the origin of electrical signals should be taken into account when undertaking any transport measurements on magnetic bilayer nanostructures, such as GMR or spintronic devices.

  20. Dependence of spin-pumping spin Hall effect measurements on layer thicknesses and stacking order

    NASA Astrophysics Data System (ADS)

    Vlaminck, V.; Pearson, J. E.; Bader, S. D.; Hoffmann, A.

    2013-08-01

    Voltages generated from inverse spin Hall and anisotropic magnetoresistance effects via spin pumping in ferromagnetic (F)/nonmagnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the nonmagnetic layer thickness enables the determination of the spin diffusion length in Pd of 5.5 ± 0.5 nm. We also observe a systematic change of the voltage line shape when reversing the stacking order of the F/N bilayer, which is qualitatively consistent with expectations from spin Hall effects. However, even after independent calibration of the precession angle, systematic quantitative discrepancies in analyzing the data with spin Hall effects remain.

  1. Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3

    NASA Astrophysics Data System (ADS)

    Sürgers, Christoph; Kittler, Wolfram; Wolf, Thomas; Löhneysen, Hilbert v.

    2016-05-01

    Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements on polycrstalline thin films and a single crystal are reported. In all samples, an additional contribution to the anomalous Hall effect attributed to the noncollinear arrangment of magnetic moments is observed. Furthermore, an additional magnetic phase between the noncollinear and collinear regimes above a metamagnetic transition is resolved in the single crystal by the anomalous Hall effect.

  2. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

    SciTech Connect

    Yang, Wen; Chang, Kai; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

  3. Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film

    NASA Astrophysics Data System (ADS)

    Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2016-05-01

    Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large

  4. Framing Anomaly in the Effective Theory of Fractional Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Gromov, Andrey; Abanov, Alexander; Cho, Gil Young; You, Yizhi; Fradkin, Eduardo

    2015-03-01

    While the classical Chern-Simons theory is topological, it's quantum version is not as it depends on the metric of the base manifold through the path integral measure. This phenomenon is known as the framing anomaly. It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions of fractional quantum Hall systems (FQH). In the lowest order in gradients the effective action includes Chern-Simons, Wen-Zee and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and generates a ``finite size correction'' to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses of non-Abelian FQH states.

  5. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

    NASA Astrophysics Data System (ADS)

    Chang, CuiZu; Liu, MinHao; Zhang, ZuoCheng; Wang, YaYu; He, Ke; Xue, QiKun

    2016-03-01

    High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2- x Cr x Te3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2- x Cr x Te3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

  6. Observation of topological Hall effect in Mn2RhSn films

    NASA Astrophysics Data System (ADS)

    Rana, K. G.; Meshcheriakova, O.; Kübler, J.; Ernst, B.; Karel, J.; Hillebrand, R.; Pippel, E.; Werner, P.; Nayak, A. K.; Felser, C.; Parkin, S. S. P.

    2016-08-01

    Recently non-collinear magnetic structures have attracted renewed attention due to the novel Hall effects that they display. In earlier work evidence for a non-collinear magnetic structure has been reported for the ferromagnetic Heusler compound Mn2RhSn. Using sputtering techniques we have prepared high quality epitaxial thin films of Mn2RhSn by high temperature growth on MgO (001) substrates. The films are tetragonally distorted with an easy magnetization axis along the c-axis. Moreover, we find evidence for an anomalous Hall effect whose magnitude increases strongly below the Curie temperature that is near room temperature. Consistent with theoretical calculations of the anomalous Hall conductivity that we have carried out by deriving the Berry curvature from the electronic structure of perfectly ordered Mn2RhSn, the sign of the anomalous Hall conductivity is negative, although the measured value is considerably smaller than the calculated value. We attribute this difference to small deviations in stoichiometry and chemical ordering. We also find evidence for a topological Hall resistivity of about 50 nΩ cm, which is ∼5% of the anomalous Hall effect, for temperatures below 100 K. The topological Hall effect signifies the presence of a chiral magnetic structure that evolves from the non-collinear magnetic structure that Mn2RhSn is known to exhibit.

  7. Comparative study on the performance of five different Hall effect devices.

    PubMed

    Paun, Maria-Alexandra; Sallese, Jean-Michel; Kayal, Maher

    2013-02-05

    Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.

  8. Comparative Study on the Performance of Five Different Hall Effect Devices

    PubMed Central

    Paun, Maria-Alexandra; Sallese, Jean-Michel; Kayal, Maher

    2013-01-01

    Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. PMID:23385419

  9. Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

    NASA Astrophysics Data System (ADS)

    Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

    2016-09-01

    Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

  10. Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Zhao, Xin; Montgomery, Kyle H.; Woodall, Jerry M.

    2014-11-01

    We report results from Hall effect studies on Al x Ga1- x As ( x = 0.23-0.24) with bandgap energies of 1.76 ± 0.01 eV grown by liquid-phase epitaxy (LPE). Room-temperature Hall measurements on unintentionally doped AlGaAs revealed p-type background doping for concentrations in the range 3.7-5.2 × 1016 cm-3. Sn, Te, Ge, and Zn-doped AlGaAs were also characterized to study the relationship between doping concentrations and the atomic fractions of the dopants in the melt. Temperature-dependent Hall measurements were performed to determine the activation energies of the four dopants. Deep donor levels (DX centers) were dominant for Sn-doped Al0.24Ga0.76As, but not for Te-doped Al0.24Ga0.76As. Comparison of the temperature-dependent Hall effect results for unintentionally and intentionally doped Al0.24Ga0.76As indicated that the impurity contributing to the p-type background doping had the same activation energy as Mg. We thus suggest a Te-doped emitter and an undoped or Ge-doped base to maximize the efficiency of Al x Ga1- x As ( x ˜ 0.23) solar cells grown by LPE.

  11. Does the Hall Effect Solve the Flux Pileup Saturation Problem?

    NASA Technical Reports Server (NTRS)

    Dorelli, John C.

    2010-01-01

    It is well known that magnetic flux pileup can significantly speed up the rate of magnetic reconnection in high Lundquist number resistive MHD,allowing reconnection to proceed at a rate which is insensitive to the plasma resistivity over a wide range of Lundquist number. Hence, pileup is a possible solution to the Sweet-Parker time scale problem. Unfortunately, pileup tends to saturate above a critical value of the Lundquist number, S_c, where the value ofS_c depends on initial and boundary conditions, with Sweet-Parker scaling returning above S_c. It has been argued (see Dorelli and Bim [2003] and Dorelli [2003]) that the Hall effect can allow flux pileup to saturate (when the scale of the current sheet approaches ion inertial scale, di) before the reconnection rate begins to stall. However, the resulting saturated reconnection rate, while insensitive to the plasma resistivity, was found to depend strongly on the di. In this presentation, we revisit the problem of magnetic island coalescence (which is a well known example of flux pileup reconnection), addressing the dependence of the maximum coalescence rate on the ratio of di in the "large island" limit in which the following inequality is always satisfied: l_eta di lambda, where I_eta is the resistive diffusion length and lambda is the island wavelength.

  12. Investigation of magnetic proximity effect in Ta/YIG bilayer Hall bar structure

    SciTech Connect

    Yang, Yumeng; Wu, Baolei; Wu, Yihong; Yao, Kui; Shannigrahi, Santiranjan; Zong, Baoyu

    2014-05-07

    In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance (MR) and Hall measurements for in-plane and out-of-plane applied magnetic field sweeps were carried out at room temperature. The size of the MR ratio observed (∼10{sup −5}) and its magnetization direction dependence are similar to that reported in Pt/yttrium iron garnet, both of which can be explained by the spin Hall magnetoresistance theory. Additionally, a flip of magnetoresistance polarity is observed at 4 K in the temperature dependent measurements, which can be explained by the magnetic proximity effect induced anisotropic magnetoresistance at low temperature. Our findings suggest that both magnetic proximity effect and spin Hall magnetoresistance have contribution to the recently observed unconventional magnetoresistance effect.

  13. Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

    NASA Technical Reports Server (NTRS)

    Huang, Wensheng; Kamhawi, Hani; Meyers, James L.; Yim, John T.; Neff, Gregory

    2015-01-01

    The Thermal Characterization Test of NASAs 12.5-kW Hall thruster is being completed. This thruster is being developed to support of a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of this test, an infrared-based, non-contact thermal imaging system was developed to measure Hall thruster surfaces that are exposed to high voltage or harsh environment. To increase the accuracy of the measurement, a calibration array was implemented, and a pilot test was performed to determine key design parameters for the calibration array. The raw data is analyzed in conjunction with a simplified thermal model of the channel to account for reflection. The reduced data will be used to refine the thruster thermal model, which is critical to the verification of the thruster thermal specifications. The present paper will give an overview of the decision process that led to identification of the need for a non-contact temperature diagnostic, the development of said diagnostic, the measurement results, and the simplified thermal model of the channel.

  14. High Performance Power Module for Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

    2002-01-01

    Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

  15. Spin-Hall effect and spin-Coulomb drag in doped semiconductors.

    PubMed

    Hankiewicz, E M; Vignale, G

    2009-06-24

    In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

  16. TOPICAL REVIEW: Spin-Hall effect and spin-Coulomb drag in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Hankiewicz, E. M.; Vignale, G.

    2009-06-01

    In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

  17. Hall effect sensors embedded within two-pole toothless stator assembly

    NASA Technical Reports Server (NTRS)

    Denk, Joseph (Inventor); Grant, Richard J. (Inventor)

    1994-01-01

    A two-pole toothless PM machine employs Hall effect sensors to indicate the position of the machine's rotor relative to power windings in the machine's stator. The Hall effect sensors are located in the main magnetic air gap underneath the power windings. The main magnetic air gap is defined by an outer magnetic surface of the rotor and an inner surface of the stator's flux collector ring.

  18. Giant spin-Hall effect induced by the Zeeman interaction in graphene.

    PubMed

    Abanin, D A; Gorbachev, R V; Novoselov, K S; Geim, A K; Levitov, L S

    2011-08-26

    We propose a new approach to generate and detect spin currents in graphene, based on a large spin-Hall response arising near the neutrality point in the presence of an external magnetic field. Spin currents result from the imbalance of the Hall resistivity for the spin-up and spin-down carriers induced by the Zeeman interaction, and do not involve a spin-orbit interaction. Large values of the spin-Hall response achievable in moderate magnetic fields produced by on-chip sources, and up to room temperature, make the effect viable for spintronics applications.

  19. Quantum thermal Hall effect of Majorana fermions on the surface of superconducting topological insulators

    NASA Astrophysics Data System (ADS)

    Shimizu, Yosuke; Yamakage, Ai; Nomura, Kentaro

    2015-05-01

    We study the quantum anomalous thermal Hall effect in a topological superconductor, which possesses an integer bulk topological number and supports Majorana excitations on the surface. To realize the quantum thermal Hall effect, a finite gap at the surface is induced by applying an external magnetic field or by the proximity effects with magnetic materials or s -wave superconductors with complex pair potentials. Basing on the lattice model Hamiltonian for superconducting states in Cu-doped Bi2Se3 , we compute the thermal Hall conductivity as a function of various parameters such as the chemical potential, the pair potential, and the spin-orbit coupling-induced band gap. It is argued that the bulk topological invariant corresponds to the quantization rule of the thermal Hall conductivity induced by complex s -wave pair potentials.

  20. Extrinsic Spin Hall Effect Induced by Resonant Skew Scattering in Graphene

    NASA Astrophysics Data System (ADS)

    Ferreira, Aires; Rappoport, Tatiana G.; Cazalilla, Miguel A.; Castro Neto, A. H.

    2015-03-01

    We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging. The author acknowledges support from the National Research Foundation-Competitive Research Programme through Grant No. R-144-000-295-281.

  1. Theory of spin Hall effect: extension of the Drude model.

    PubMed

    Chudnovsky, Eugene M

    2007-11-16

    An extension of the Drude model is proposed that accounts for the spin and spin-orbit interaction of charge carriers. Spin currents appear due to the combined action of the external electric field, crystal field, and scattering of charge carriers. The expression for the spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, the spin Hall conductivity sigma s and charge conductivity sigma c are related through sigma s=[2pi variant /(3mc2)]sigma2c with m being the bare electron mass. The theoretically computed value is in agreement with experiment.

  2. Unconventional Hall effect in pnictides from interband interactions.

    PubMed

    Fanfarillo, L; Cappelluti, E; Castellani, C; Benfatto, L

    2012-08-31

    We calculate the Hall transport in a multiband system with a dominant interband interaction between carriers having electron and hole character. We show that this situation gives rise to an unconventional scenario, beyond the Boltzmann theory, where the quasiparticle currents dressed by vertex corrections acquire the character of the majority carriers. This leads to a larger (positive or negative) Hall coefficient than what may be expected on the basis of the carrier balance, with a marked temperature dependence. Our results explain the puzzling measurements in pnictides and provide a more general framework for transport properties in multiband materials.

  3. Partition noise and statistics in the fractional quantum hall effect.

    PubMed

    Safi, I; Devillard, P; Martin, T

    2001-05-14

    A microscopic theory of current partition in fractional quantum Hall liquids, described by chiral Luttinger liquids, is developed to compute the noise correlations, using the Keldysh technique. In this Hanbury-Brown and Twiss geometry, at Laughlin filling factors nu = 1/3, the real time noise correlator exhibits oscillations which persist over larger time scales than that of an uncorrelated Hall fluid. The zero frequency noise correlations are negative at filling factor 1/3 as for bare electrons (antibunching), but are strongly reduced in amplitude. These correlations become positive (bunching) for nu < or = 1/5, suggesting a tendency towards bosonic behavior.

  4. Half integer features in the quantum Hall Effect: experiment and theory

    NASA Astrophysics Data System (ADS)

    Kramer, Tobias; Heller, E. J.; Parrott, R. E.; Liang, C.-T.; Huang, C. F.; Chen, K. Y.; Lin, L.-H.; Wu, J.-Y.; Lin, S.-D.

    2009-03-01

    We discuss experimental data and a new model of the integer quantum Hall effect (IQHE), which explains an intriguing substructure within Landau levels observed at higher currents. The experiments show inflection points in the Hall resistivity around filling factors 5/2 and 7/2. The experiments require to revisit the foundations of the IQHE and to establish an injection model which incorporates the correct boundary conditions imposed by a real Hall device and the Lorentz force. We have to follow the electrons to their source: one corner of the Hall bar and its steep electric field gradients, rather than focusing on the middle of the Hall device. We find the entire Hall resistivity curve is calculable as a function of magnetic field, temperature, and current. In contrast to previous theories of the IQHE, disorder plays no fundamental role in our theory. Contrary to the standard picture of Landau levels in disorder system, we predict and observe gaps right in the middle of certain Landau levels. The Hall plateaus and half integer inflections are shown to result from the LDOS appropriate to the magnetic field and the strong electric field at the injection corner.

  5. Metallization and Hall-effect of Mg{sub 2}Ge under high pressure

    SciTech Connect

    Li, Yuqiang; Gao, Yang; Han, Yonghao Liu, Cailong; Peng, Gang; Ke, Feng; Gao, Chunxiao; Wang, Qinglin; Ma, Yanzhang

    2015-10-05

    The electrical transport properties of Mg{sub 2}Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg{sub 2}Ge was definitely found around 7.4 GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg{sub 2}Ge was hole, indicating the “bad metal” nature of Mg{sub 2}Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni{sub 2}In-type phases it was governed by the Hall mobility.

  6. Theory of the three-dimensional quantum Hall effect in graphite.

    PubMed

    Bernevig, B Andrei; Hughes, Taylor L; Raghu, Srinivas; Arovas, Daniel P

    2007-10-01

    We predict the existence of a three-dimensional quantum Hall effect plateau in a graphite crystal subject to a magnetic field. The plateau has a Hall conductivity quantized at 4e2/variant Planck's over 2pi 1/c0 with c0 the c-axis lattice constant. We analyze the three-dimensional Hofstadter problem of a realistic tight-binding Hamiltonian for graphite, find the gaps in the spectrum, and estimate the critical value of the magnetic field above which the Hall plateau appears. When the Fermi level is in the bulk Landau gap, Hall transport occurs through the appearance of chiral surface states. We estimate the magnetic field necessary for the appearance of the effect to be 15.4 T for electron carriers and 7.0 T for holes.

  7. Understanding the physics of a possible non-Abelian fractional quantum hall effect state.

    SciTech Connect

    Pan, Wei; Crawford, Matthew; Tallakulam, Madhu; Ross, Anthony Joseph, III

    2010-10-01

    We wish to present in this report experimental results from a one-year Senior Council Tier-1 LDRD project that focused on understanding the physics of a possible non-Abelian fractional quantum Hall effect state. We first give a general introduction to the quantum Hall effect, and then present the experimental results on the edge-state transport in a special fractional quantum Hall effect state at Landau level filling {nu} = 5/2 - a possible non-Abelian quantum Hall state. This state has been at the center of current basic research due to its potential applications in fault-resistant topological quantum computation. We will also describe the semiconductor 'Hall-bar' devices we used in this project. Electron physics in low dimensional systems has been one of the most exciting fields in condensed matter physics for many years. This is especially true of quantum Hall effect (QHE) physics, which has seen its intellectual wealth applied in and has influenced many seemingly unrelated fields, such as the black hole physics, where a fractional QHE-like phase has been identified. Two Nobel prizes have been awarded for discoveries of quantum Hall effects: in 1985 to von Klitzing for the discovery of integer QHE, and in 1998 to Tsui, Stormer, and Laughlin for the discovery of fractional QHE. Today, QH physics remains one of the most vibrant research fields, and many unexpected novel quantum states continue to be discovered and to surprise us, such as utilizing an exotic, non-Abelian FQHE state at {nu} = 5/2 for fault resistant topological computation. Below we give a briefly introduction of the quantum Hall physics.

  8. Magnetic vector sensors based on the Hall effect

    NASA Astrophysics Data System (ADS)

    Roumenin, Ch. S.

    Integrated two- and three-dimensional vector versions of the parallel-field Hall microsensor proposed by Roumenin (1987) are presented. The characteristics of Roumenin's microsensor, which is activated by the external magnetic field parallel to the IC plane, are reviewed. The configurations of the magnetic two- and three-dimensional vector microsensors are illustrated and the operation of the microsensors is discussed.

  9. Hall effect and magnetoresistivity in the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Haugland, E. J.; Alterovitz, S. A.

    1978-01-01

    The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

  10. The Quantum Spin Hall Effect: Theory and Experiment

    NASA Astrophysics Data System (ADS)

    König, Markus; Buhmann, Hartmut; Molenkamp, Laurens W.; Hughes, Taylor; Liu, Chao-Xing; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2008-03-01

    The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in the bulk, but have topologically protected edge states due to the time reversal symmetry. In two dimensions the helical edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. Here we review a recent theory which predicts that the QSH state can be realized in HgTe/CdTe semiconductor quantum wells (QWs). By varying the thickness of the QW, the band structure changes from a normal to an “inverted” type at a critical thickness dc. We present an analytical solution of the helical edge states and explicitly demonstrate their topological stability. We also review the recent experimental observation of the QSH state in HgTe/(Hg,Cd)Te QWs. We review both the fabrication of the sample and the experimental setup. For thin QWs with well width dQW<6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker QWs (dQW>6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, dc=6.3 nm, is also independently determined from the occurrence of a magnetic field induced insulator to metal transition.

  11. The Quantum Spin Hall Effect: Theory and Experiment

    SciTech Connect

    Konig, Markus; Buhmann, Hartmut; Molenkamp, Laurens W.; Hughes, Taylor L.; Liu, Chao-Xing; Qi, Xiao-Liang; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in the bulk, but have topologically protected edge states due to the time reversal symmetry. In two dimensions the helical edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. Here we review a recent theory which predicts that the QSH state can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the band structure changes from a normal to an 'inverted' type at a critical thickness d{sub c}. We present an analytical solution of the helical edge states and explicitly demonstrate their topological stability. We also review the recent experimental observation of the QSH state in HgTe/(Hg,Cd)Te quantum wells. We review both the fabrication of the sample and the experimental setup. For thin quantum wells with well width d{sub QW} < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d{sub QW} > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e{sup 2}/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d{sub c} = 6.3 nm, is also independently determined from the occurrence of a magnetic field induced insulator to metal transition.

  12. Probing the thermal Hall effect using miniature capacitive strontium titanate thermometry

    NASA Astrophysics Data System (ADS)

    Tinsman, Colin; Li, Gang; Su, Caroline; Asaba, Tomoya; Lawson, Benjamin; Yu, Fan; Li, Lu

    2016-06-01

    The thermal Hall effect is the thermal analog of the electrical Hall effect. Rarely observed in normal metals, thermal Hall signals have been argued to be a key property for a number of strongly correlated materials, such as high temperature superconductors, correlated topological insulators, and quantum magnets. The observation of the thermal Hall effect requires precise measurement of temperature in intense magnetic fields. Particularly at low temperature, resistive thermometers have a strong dependence on field, which makes them unsuitable for this purpose. We have created capacitive thermometers which instead measure the dielectric constant of strontium titanate (SrTiO3). SrTiO3 approaches a ferroelectric transition, causing its dielectric constant to increase by a few orders of magnitude at low temperature. As a result, these thermometers are very sensitive at low temperature while having very little dependence on the applied magnetic field, making them ideal for thermal Hall measurements. We demonstrate this method by making measurements of the thermal Hall effect in Bismuth in magnetic fields of up to 10 T.

  13. Higgs mechanism, phase transitions, and anomalous Hall effect in three-dimensional topological superconductors

    NASA Astrophysics Data System (ADS)

    Nogueira, Flavio S.; Sudbø, Asle; Eremin, Ilya

    2015-12-01

    We demonstrate that the Higgs mechanism in three-dimensional topological superconductors exhibits unique features with experimentally observable consequences. The Higgs model we discuss has two superconducting components and an axionlike magnetoelectric term with the phase difference of the superconducting order parameters playing the role of the axion field. Due to this additional term, quantum electromagnetic and phase fluctuations lead to a robust topologically nontrivial state that holds also in the presence of interactions. In this sense, we show that the renormalization flow of the topologically nontrivial phase cannot be continuously deformed into a topologically nontrivial one. One consequence of our analysis of quantum critical fluctuations is the possibility of having a first-order phase transition in the bulk and a second-order phase transition on the surface. We also explore another consequence of the axionic Higgs electrodynamics, namely, the anomalous Hall effect. In the low-frequency London regime an anomalous Hall effect is induced in the presence of an applied electric field parallel to the surface. This anomalous Hall current is induced by a Lorentz-like force arising from the axion term, and it involves the relative superfluid velocity of the superconducting components. The anomalous Hall current has a negative sign, a situation reminiscent of but quite distinct in physical origin from the anomalous Hall effect observed in high-Tc superconductors. In contrast to the latter, the anomalous Hall effect in topological superconductors is nondissipative and occurs in the absence of vortices.

  14. Low-field anomaly of the hall effect in disordered two-dimensional systems

    SciTech Connect

    Germanenko, A. V.; Minkov, G. M.; Rut, O. E.; Soldatov, I. V.; Sherstobitov, A. A.

    2010-11-15

    This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/In{sub x}Ga{sub 1-x}As/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.

  15. Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

    SciTech Connect

    Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S.; Neverov, V. N. Novokshonov, S. G.; Kharus, G. I.; Shelushinina, N. G.; Yakunin, M. V.

    2013-07-15

    The longitudinal {rho}{sub xx}(B) and Hall {rho}{sub xy}(B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.

  16. Fully band-resolved scattering rate in MgB2 revealed by the nonlinear hall effect and magnetoresistance measurements.

    PubMed

    Yang, Huan; Liu, Yi; Zhuang, Chenggang; Shi, Junren; Yao, Yugui; Massidda, Sandro; Monni, Marco; Jia, Ying; Xi, Xiaoxing; Li, Qi; Liu, Zi-Kui; Feng, Qingrong; Wen, Hai-Hu

    2008-08-01

    We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.

  17. Effect of Background Pressure on the Plasma Oscillation Characteristics of the HiVHAc Hall Thruster

    NASA Technical Reports Server (NTRS)

    Huang, Wensheng; Kamhawi, Hani; Lobbia, Robert B.; Brown, Daniel L.

    2014-01-01

    During a component compatibility test of the NASA HiVHAc Hall thruster, a number of plasma diagnostics were implemented to study the effect of varying facility background pressure on thruster operation. These diagnostics characterized the thruster performance, the plume, and the plasma oscillations in the thruster. Thruster performance and plume characteristics as functions of background pressure were previously published. This paper focuses on changes in the plasma oscillation characteristics with changing background pressure. The diagnostics used to study plasma oscillations include a high-speed camera and a set of high-speed Langmuir probes. The results show a rise in the oscillation frequency of the "breathing" mode with rising background pressure, which is hypothesized to be due to a shortening acceleration/ionization zone. An attempt is made to apply a simplified ingestion model to the data. The combined results are used to estimate the maximum acceptable background pressure for performance and wear testing.

  18. Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

    NASA Astrophysics Data System (ADS)

    Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri; Abanin, Dmitry A.; Levitov, Leonid S.; Kim, Philip

    2007-10-01

    We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

  19. Anomalous Hall effect sensors based on magnetic element doped topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Ni, Yan; Zhang, Zhen; Nlebedim, Ikenna; Jiles, David

    Anomalous Hall effect (AHE) is recently discovered in magnetic element doped topological insulators (TIs), which promises low power consumption highly efficient spintronics and electronics. This discovery broaden the family of Hall effect (HE) sensors. In this work, both HE and AHE sensor based on Mn and Cr doped Bi2Te3 TI thin films will be systematically studied. The influence of Mn concentration on sensitivity of MnxBi2-xTe3 HE sensors will be discussed. The Hall sensitivity increase 8 times caused by quantum AHE will be reported. AHE senor based on Cr-doped Bi2Te3 TI thin films will also be studied and compared with Mn doped Bi2Te3 AHE sensor. The influence of thickness on sensitivity of CrxBi2-xTe3 AHE sensors will be discussed. Ultrahigh Hall sensitivity is obtained in Cr doped Bi2Te3. The largest Hall sensitivity can reach 2620 Ω/T in sensor which is almost twice higher than that of the normal semiconductor HE sensor. Our work indicates that magnetic element doped topological insulator with AHE are good candidates for ultra-sensitive Hall effect sensors.

  20. Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

    PubMed

    Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2016-06-01

    Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material. PMID:27181160

  1. Intrinsic spin Hall effect in the presence of extrinsic spin-orbit scattering

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Sarma, S. Das

    2006-12-01

    Intrinsic and extrinsic spin Hall effects are considered together on an equal theoretical footing for the Rashba spin-orbit coupling in two-dimensional (2D) electron and hole systems, using the diagrammatic method for calculating the spin Hall conductivity. Our analytic theory for the 2D holes shows the expected lowest-order additive result for the spin Hall conductivity. But, the 2D electrons manifest a very surprising result, exhibiting a non-analyticity in the Rashba coupling strength α where the strictly extrinsic spin Hall conductivity (for α=0 ) cannot be recovered from the α→0 limit of the combined theory. The theoretical results are discussed in the context of existing experimental results.

  2. Coulomb corrections to the extrinsic spin-Hall effect of a two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Hankiewicz, E. M.; Vignale, G.

    2006-03-01

    We develop the microscopic theory of the extrinsic spin-Hall conductivity of a two-dimensional electron gas, including skew-scattering, side-jump, and Coulomb interaction effects. We find that while the spin-Hall conductivity connected with the side jump is independent of the strength of electron-electron interactions, the skew-scattering term is reduced by the spin-Coulomb drag, so the total spin current and the total spin-Hall conductivity are reduced for typical experimental mobilities. Further, we predict that in paramagnetic systems the spin-Coulomb drag reduces the spin accumulations in two different ways: (i) directly through the reduction of the skew-scattering contribution, and (ii) indirectly through the reduction of the spin diffusion length. Explicit expressions for the various contributions to the spin-Hall conductivity are obtained using an exactly solvable model of the skew scattering.

  3. What is intrinsic and what is extrinsic in the spin Hall effect?

    NASA Astrophysics Data System (ADS)

    Hankiewicz, Ewelina; Vignale, Giovanni; Flatté, Michael

    2006-03-01

    Two different forms of the spin Hall effect, intrinsic and extrinsic, have been recently proposed and observed in experiments. The intrinsic effect is caused by spin-orbit coupling in the band structure of the semiconductor and survives in the limit of zero disorder, whereas the extrinsic effect is caused by spin-orbit coupling between Bloch electrons and impurities. We treat both effects on equal footing within the framework of the exact Kubo linear response formalism. We show that the ``side-jump" term, which is usually considered part of the extrinsic spin Hall effect, is really intrinsic, because it is independent of disorder. Furthermore, it is the only non-zero intrinsic contribution to the spin-Hall effect for the linear Rashba (or Dresselhaus) spin-orbit coupling model. On the other hand, the skew scattering term is the only extrinsic contribution to the spin-Hall effect within this model. The proof based on gauge invariance holds at all orders in disorder and electron-electron interactions and to first order in spin-orbit coupling, but does not apply to more complex spin-orbit coupled bands (e.g the Luttinger model). We also study many-body effects and predict that the spin Coulomb drag will reduce the spin Hall conductivity.

  4. Anomalous Hall effect on the surface of topological Kondo insulators

    NASA Astrophysics Data System (ADS)

    König, E. J.; Ostrovsky, P. M.; Dzero, M.; Levchenko, A.

    2016-07-01

    We calculate the anomalous Hall conductivity σx y of the surface states in cubic topological Kondo insulators. We consider a generic model for the surface states with three Dirac cones on the (001) surface. The Fermi velocity, the Fermi momentum, and the Zeeman energy in different Dirac pockets may be unequal. The microscopic impurity potential mediates mixed intra- and interband extrinsic scattering processes. Our calculation of σx y is based on the Kubo-Streda diagrammatic approach. It includes diffractive skew scattering contributions originating from the rare two-impurity complexes. Remarkably, these contributions yield anomalous Hall conductivity that is independent of impurity concentration, and thus is of the same order as other known extrinsic side jump and skew scattering terms. We discuss various special cases of our results and the experimental relevance of our study in the context of the recent hysteretic magnetotransport data in SmB6 samples.

  5. Anomalous Hall effect studies on Tb-Fe thin films

    NASA Astrophysics Data System (ADS)

    Rajasekhar, P.; Deepak Kumar, K.; Markandeyulu, G.

    2016-08-01

    Tbx Fe100-x (with x=11, 25, 31 and 44) thin films were prepared with the substrates kept at a temperature of 300 °C and the Hall resistivities and electrical resistivities were investigated in the temperature range 25-300 K. The sign of Hall resistivity is found to change from positive for x=31 to negative for x=44 film at temperatures 25 K and 300 K, reflecting the compensation of Tb and Fe magnetic moments between these two compositions. Perpendicular magnetic anisotropy was observed in the films of x=25 and 31 at 25 K as well as at 300 K. The Hall resistivity is seen to increase for the films of x=11 and 31 with increasing temperature, while it decreases for the films of x=25 and 44 with increasing temperature. The temperature coefficients of electrical resistivities of these films are seen to be positive. The presence of perpendicular magnetic anisotropy (refers to magnetic anisotropy, in this paper) in the temperature range 25-300 K in Tb25Fe75 and Tb31Fe69 and their metallic nature are indicators that the Tb-Fe films deposited at higher temperatures are more suitable for magneto optic data storage applications than their amorphous counterparts, due to the stability of the former.

  6. Elementary scaling laws for the design of low and high power hall effect thrusters

    NASA Astrophysics Data System (ADS)

    Dannenmayer, K.; Mazouffre, S.

    2011-10-01

    An advanced set of scaling laws for Hall effect thrusters running with Xenon as propellant is established on the basis of the existence of an optimum atom number density that warrants a high efficiency thruster operation. A set of general relationships between macroscopic quantities, like thrust and input power, dimensions, including the channel length, the channel width and the channel mean diameter, and magnetic field strength are inferred from the main physical processes at work in a Hall thruster discharge. The "atom density constraint" of which the nature is here critically interpreted allows simplifying those relationships as it leads to a linear dependency between the channel length and mean diameter. Scaling laws which represent an essential tool for sizing up and down Hall thrusters are eventually obtained after proportionnality coefficients are determined. This last step is realized by means of a vast database that presently encompasses 33 single-stage Hall thrusters. In order to illustrate the usefulness of this new set of scaling laws, two practical applications are given and discussed. The scaling laws are first employed to calculate the dimensions and the operating parameters for a 20-kilowatt Hall thruster capable of producing 1 N of thrust. Such an electrical engine would permit orbit transfer of large communication satellites. Finally, the geometry of a Hall thruster is determined for tolerating 100 kW, an interesting power level for interplanetary trips.

  7. When Chiral Photons Meet Chiral Fermions: Photoinduced Anomalous Hall Effects in Weyl Semimetals.

    PubMed

    Chan, Ching-Kit; Lee, Patrick A; Burch, Kenneth S; Han, Jung Hoon; Ran, Ying

    2016-01-15

    The Weyl semimetal is characterized by three-dimensional linear band touching points called Weyl nodes. These nodes come in pairs with opposite chiralities. We show that the coupling of circularly polarized photons with these chiral electrons generates a Hall conductivity without any applied magnetic field in the plane orthogonal to the light propagation. This phenomenon comes about because with all three Pauli matrices exhausted to form the three-dimensional linear dispersion, the Weyl nodes cannot be gapped. Rather, the net influence of chiral photons is to shift the positions of the Weyl nodes. Interestingly, the momentum shift is tightly correlated with the chirality of the node to produce a net anomalous Hall signal. Application of our proposal to the recently discovered TaAs family of Weyl semimetals leads to an order-of-magnitude estimate of the photoinduced Hall conductivity which is within the experimentally accessible range. PMID:26824561

  8. When Chiral Photons Meet Chiral Fermions: Photoinduced Anomalous Hall Effects in Weyl Semimetals

    NASA Astrophysics Data System (ADS)

    Chan, Ching-Kit; Lee, Patrick A.; Burch, Kenneth S.; Han, Jung Hoon; Ran, Ying

    2016-01-01

    The Weyl semimetal is characterized by three-dimensional linear band touching points called Weyl nodes. These nodes come in pairs with opposite chiralities. We show that the coupling of circularly polarized photons with these chiral electrons generates a Hall conductivity without any applied magnetic field in the plane orthogonal to the light propagation. This phenomenon comes about because with all three Pauli matrices exhausted to form the three-dimensional linear dispersion, the Weyl nodes cannot be gapped. Rather, the net influence of chiral photons is to shift the positions of the Weyl nodes. Interestingly, the momentum shift is tightly correlated with the chirality of the node to produce a net anomalous Hall signal. Application of our proposal to the recently discovered TaAs family of Weyl semimetals leads to an order-of-magnitude estimate of the photoinduced Hall conductivity which is within the experimentally accessible range.

  9. Extraordinary Hall effect in Kondo-type systems: Contributions from anomalous velocity

    NASA Astrophysics Data System (ADS)

    Levy, P. M.

    1988-10-01

    Kondo systems exhibit a relatively large extraordinary Hall effect which is due to asymmetric resonant scattering of conduction electrons. Theories based on the skew scattering mechanism account for data at high temperatures T>TK (the Kondo temperature) but are unable to explain the very-low-temperature variation of the Hall constant observed in heavy-fermion compounds. Aside from the ordinary Hall effect, caused by the Lorentz force and skew scattering (which makes the scattering probability antisymmetric with respect to interchange of scattering vectors), there exists an additional contribution to the Hall effect known as the anomalous-velocity contribution. This contribution is due to a change in the expression for the current operator in the presence of spin-orbit forces. We derive an expression for the anomalous velocity in terms of the T matrices describing conduction-electron scattering; it is not limited to weak spin-orbit scattering as were previous results. We use the Anderson model of local moments in metals to write this scattering in terms of the mixing interaction between local and conduction electrons, and the local state's Green's function. The transverse Hall current due to anomalous velocity is determined and evaluated in two limits. At high temperature, we use the weak-coupling form of the local state's Green's function; at T=0 K a phase-shift analysis is used, and we rely on the Friedel-Langreth sum rule to give us the phase shift at the Fermi surface. At high temperatures we find that the contribution from anomalous velocity to the Hall constant is quite small compared to that from skew scattering. On the contrary, at low temperatures the anomalous velocity makes the dominant contribution to the Hall constant in Kondo systems.

  10. Kinetic theory of spin-polarized systems in electric and magnetic fields with spin-orbit coupling. I. Kinetic equation and anomalous Hall and spin-Hall effects

    NASA Astrophysics Data System (ADS)

    Morawetz, K.

    2015-12-01

    The coupled kinetic equation for density and spin Wigner functions is derived including spin-orbit coupling, electric and magnetic fields, and self-consistent Hartree mean fields suited for SU(2) transport. The interactions are assumed to be with scalar and magnetic impurities as well as scalar and spin-flip potentials among the particles. The spin-orbit interaction is used in a form suitable for solid state physics with Rashba or Dresselhaus coupling, graphene, extrinsic spin-orbit coupling, and effective nuclear matter coupling. The deficiencies of the two-fluid model are worked out consisting of the appearance of an effective in-medium spin precession. The stationary solution of all these systems shows a band splitting controlled by an effective medium-dependent Zeeman field. The self-consistent precession direction is discussed and a cancellation of linear spin-orbit coupling at zero temperature is reported. The precession of spin around this effective direction caused by spin-orbit coupling leads to anomalous charge and spin currents in an electric field. Anomalous Hall conductivity is shown to consist of the known results obtained from the Kubo formula or Berry phases and a symmetric part interpreted as an inverse Hall effect. Analogously the spin-Hall and inverse spin-Hall effects of spin currents are discussed which are present even without magnetic fields showing a spin accumulation triggered by currents. The analytical dynamical expressions for zero temperature are derived and discussed in dependence on the magnetic field and effective magnetizations. The anomalous Hall and spin-Hall effect changes sign at higher than a critical frequency dependent on the relaxation time.

  11. Effective-field-theory model for the fractional quantum Hall effect

    NASA Technical Reports Server (NTRS)

    Zhang, S. C.; Hansson, T. H.; Kivelson, S.

    1989-01-01

    Starting directly from the microscopic Hamiltonian, a field-theory model is derived for the fractional quantum Hall effect. By considering an approximate coarse-grained version of the same model, a Landau-Ginzburg theory similar to that of Girvin (1986) is constructed. The partition function of the model exhibits cusps as a function of density. It is shown that the collective density fluctuations are massive.

  12. Coriolis effect and spin Hall effect of light in an inhomogeneous chiral medium.

    PubMed

    Zhang, Yongliang; Shi, Lina; Xie, Changqing

    2016-07-01

    We theoretically investigate the spin Hall effect of spinning light in an inhomogeneous chiral medium. The Hamiltonian equations of the photon are analytically obtained within eikonal approximation in the noninertial orthogonal frame. Besides the usual spin curvature coupling, the chiral parameter enters the Hamiltonian as a spin-torsion-like interaction. We reveal that both terms have parallel geometric origins as the Coriolis terms of Maxwell's equations in nontrivial frames.

  13. Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

    NASA Astrophysics Data System (ADS)

    Gladii, O.; Collet, M.; Garcia-Hernandez, K.; Cheng, C.; Xavier, S.; Bortolotti, P.; Cros, V.; Henry, Y.; Kim, J.-V.; Anane, A.; Bailleul, M.

    2016-05-01

    We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 1011 A/m2 in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

  14. A novel NO2 gas sensor based on Hall effect operating at room temperature

    NASA Astrophysics Data System (ADS)

    Lin, J. Y.; Xie, W. M.; He, X. L.; Wang, H. C.

    2016-09-01

    Tungsten trioxide nanoparticles were obtained by a simple thermal oxidation approach. The structural and morphological properties of these nanoparticles are investigated using XRD, SEM and TEM. A WO3 thick film was deposited on the four Au electrodes to be a WO3 Hall effect sensor. The sensor was tested between magnetic field in a plastic test chamber. Room-temperature nitrogen dioxide sensing characteristics of Hall effect sensor were studied for various concentration levels of nitrogen dioxide at dry air and humidity conditions. A typical room-temperature response of 3.27 was achieved at 40 ppm of NO2 with a response and recovery times of 36 and 45 s, respectively. NO2 gas sensing mechanism of Hall effect sensor was also studied. The room-temperature operation, with the low deposition cost of the sensor, suggests suitability for developing a low-power cost-effective nitrogen dioxide sensor.

  15. Quantum anomalous Hall effect and tunable topological states in 3d transition metals doped silicene.

    PubMed

    Zhang, Xiao-Long; Liu, Lan-Feng; Liu, Wu-Ming

    2013-01-01

    Silicene is an intriguing 2D topological material which is closely analogous to graphene but with stronger spin orbit coupling effect and natural compatibility with current silicon-based electronics industry. Here we demonstrate that silicene decorated with certain 3d transition metals (Vanadium) can sustain a stable quantum anomalous Hall effect using both analytical model and first-principles Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our findings provide new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states which are highly desirable for future nanoelectronics and spintronics application. PMID:24105063

  16. Fractional Quantum Hall Effects in a Two-Dimensional Atomic Gas

    NASA Astrophysics Data System (ADS)

    Zhao, Jianshi; Jacome, Louis; Gemelke, Nathan

    2014-03-01

    Fractional Hall effects in two-dimensional electron gases have dramatically altered the way we look at ordering in quantum many body systems. Despite heroic advances since their discovery, many predictions regarding unique behavior have yet to be observed. We describe new efforts to produce similar effects in cold atomic Bose gases. Previous experiments have observed strong correlation in large ensembles of rapidly rotating few body samples consistent with a description using bosonic analogues of fractional hall states. We describe extensions of these experiments to observe individual systems in a quantum gas micropscope, introduce strong interactions through Feshbach resonance, and extend effects to larger numbers of atoms. The use of impurity atoms to probe fractional hall droplets will also be discussed, as will the extension of these effects to higher spin samples by using multiple internal states of Rubidium-87.

  17. Studies of gas adsorption on ZnO using ESR, FTIR spectroscopy, and MHE (Microwave Hall Effect) measurements

    SciTech Connect

    Byungki Na; Vannice, M.A. ); Walters, A.B. )

    1993-04-01

    This paper describes the application of a new technique - Microwave Hall Effect (MHE) measurements - to measure electron mobilities and to determine the effect of adsorption on electron densities of powders. Conduction electron densities calculated from microwave measurements of both mobilities and conductivities, as well as ESR spectroscopy and chemisorption measurements, have been applied to characterize high-surface-area ZnO (up to 30 m[sup 2]/g) samples before and after exposure to O[sub 2], CO[sub 2], CO, and H[sub 2]. Evacuation at 673 K removed lattice oxygen to produce paramagnetic lattice vacancies, (V[sub 0][sup +])[sup [minus

  18. Enhanced inverse spin-Hall voltage in (001) oriented Fe4N/Pt polycrystalline films without contribution of planar-Hall effect

    NASA Astrophysics Data System (ADS)

    Isogami, Shinji; Tsunoda, Masakiyo

    2016-04-01

    In this study, the output DC electric voltage (V out) generated by a Pt-capped Fe4N bilayer film (Fe4N/Pt) under ferromagnetic resonance conditions at room temperature was assessed. The contributions from the inverse spin-Hall effect (ISHE), the planar-Hall effect (PHE) and the anomalous-Hall effect (AHE) were separated from the output voltage by analysis of V out values determined at varying external field polar angles. The results showed that the polarity of the ISHE (V ISHE) component of V out was opposite to that of the PHE (V PHE). As a result, the magnitude of the intrinsic V ISHE was beyond V out by as much as the magnitude of V PHE. The X-ray diffraction structural analysis revealed the polycrystal of the Fe4N/Pt with (001) orientation, which might be one of the possible mechanisms for enhanced intrinsic V ISHE.

  19. Effects of Landau level mixing on the fractional quantum Hall effect in monolayer graphene.

    PubMed

    Peterson, Michael R; Nayak, Chetan

    2014-08-22

    We report results of exact diagonalization studies of the spin- and valley-polarized fractional quantum Hall effect in the N = 0 and N = 1 Landau levels in graphene. We use an effective model that incorporates Landau level mixing to lowest order in the parameter κ = ((e(2)/εℓ)/(ħv(F)/ℓ)) = (e(2)/εv(F)ħ), which is magnetic field independent and can only be varied through the choice of substrate. We find Landau level mixing effects are negligible in the N = 0 Landau level for κ ≲ 2. In fact, the lowest Landau level projected Coulomb Hamiltonian is a better approximation to the real Hamiltonian for graphene than it is for semiconductor based quantum wells. Consequently, the principal fractional quantum Hall states are expected in the N = 0 Landau level over this range of κ. In the N = 1 Landau level, fractional quantum Hall states are expected for a smaller range of κ and Landau level mixing strongly breaks particle-hole symmetry, producing qualitatively different results compared to the N = 0 Landau level. At half filling of the N = 1 Landau level, we predict the anti-Pfaffian state will occur for κ ∼ 0.25-0.75.

  20. Modeling of graphene Hall effect sensors for microbead detection

    NASA Astrophysics Data System (ADS)

    Manzin, A.; Simonetto, E.; Amato, G.; Panchal, V.; Kazakova, O.

    2015-05-01

    This paper deals with the modeling of sensitivity of epitaxial graphene Hall bars, from sub-micrometer to micrometer size, to the stray field generated by a magnetic microbead. To demonstrate experiment feasibility, the model is first validated by comparison to measurement results, considering an ac-dc detection scheme. Then, a comprehensive numerical analysis is performed to investigate signal detriment caused by sensor material heterogeneities, saturation of bead magnetization at high fields, increment of bead distance from sensor surface, and device width increase.

  1. Hall current effects in the Lewis magnetohydrodynamic generator

    NASA Technical Reports Server (NTRS)

    Nichols, L. D.; Sovie, R. J.

    1972-01-01

    Data obtained in a magnetohydrodynamic generator are compared with theoretical values calculated by using the Dzung theory. The generator was operated with cesium-seeded argon as the working fluid. The gas temperature varied from 1800 to 2100 K, the gas pressure from 19 to 22 N/sq cm, the Mach number from 0.3 to 0.5, and the magnetic field strength from 0.2 to 1.6 T. The analysis indicates that there is incomplete seed vaporization and that Hall current shorting paths (through the working fluid to ground at both the entrance and exit of the channel) limit generator performance.

  2. The spin Hall effect in single-crystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Tian, Dai; Chen, Caigan; Wang, Hua; Jin, Xiaofeng

    2016-10-01

    The spin Hall effect has been investigated in 10-nm-thick epitaxial Au (001) single crystal films via H-pattern devices, whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously. Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grant Nos. 11374057, 11434003, and 11421404).

  3. Giant Anomalous Hall Effect in the Chiral Antiferromagnet Mn3Ge

    NASA Astrophysics Data System (ADS)

    Kiyohara, Naoki; Tomita, Takahiro; Nakatsuji, Satoru

    2016-06-01

    The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for ferromagnets, but it has never been observed in antiferromagnets until the recent discovery in Mn3Sn . Here we report another example of the AHE in a related antiferromagnet, namely, in the hexagonal chiral antiferromagnet Mn3Ge . Our single-crystal study reveals that Mn3Ge exhibits a giant anomalous Hall conductivity |σx z|˜60 Ω-1 cm-1 at room temperature and approximately 380 Ω-1 cm-1 at 5 K in zero field, reaching nearly half of the value expected for the quantum Hall effect per atomic layer with Chern number of unity. Our detailed analyses on the anisotropic Hall conductivity indicate that in comparison with the in-plane-field components |σx z| and |σz y|, which are very large and nearly comparable in size, we find |σy x| obtained in the field along the c axis to be much smaller. The anomalous Hall effect shows a sign reversal with the rotation of a small magnetic field less than 0.1 T. The soft response of the AHE to magnetic field should be useful for applications, for example, to develop switching and memory devices based on antiferromagnets.

  4. Role of the spin connection in quantum Hall effect: A perspective from geometric quantization

    NASA Astrophysics Data System (ADS)

    Karabali, Dimitra; Nair, V. P.

    2016-09-01

    The topological terms of the bulk effective action for the integer quantum Hall effect, capturing the dynamics of gauge and gravitational fluctuations, reveal a curiosity, namely, the Abelian potential for the magnetic field appears in a particular combination with the Abelian spin connection. This seems to hold for the quantum Hall effect on complex projective spaces of arbitrary dimensions. An interpretation of this in terms of the algebra of symplectic transformations is given. This can also be viewed in terms of the metaplectic correction in geometric quantization.

  5. Reciprocal spin Hall effects in conductors with strong spin-orbit coupling: a review

    NASA Astrophysics Data System (ADS)

    Niimi, Yasuhiro; Otani, YoshiChika

    2015-12-01

    Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck effect. These effects can oscillate magnetization or detect a thermally generated spin splitting in the chemical potential. Importantly this conversion process occurs via the spin-orbit interaction, and requires neither magnetic materials nor external magnetic fields. However, the spin Hall angle, i.e. the conversion yield between the charge and spin currents, depends severely on the experimental methods. Here we discuss the spin Hall angle and the spin diffusion length for a variety of materials including pure metals such as Pt and Ta, alloys and oxides determined by the spin absorption method in a lateral spin valve structure.

  6. Split-quaternionic Hopf map, quantum Hall effect, and twistor theory

    SciTech Connect

    Hasebe, Kazuki

    2010-02-15

    Introducing a noncompact version of the Hopf map, we demonstrate remarkable close relations between quantum Hall effect and twistor theory. We first construct quantum Hall effect on a hyperboloid based on the noncompact 2nd Hopf map of split-quaternions. We analyze a hyperbolic one-particle mechanics, and explore many-body problem, where a many-body ground state wave function and membrane-like excitations are derived explicitly. In the lowest Landau level, the symmetry is enhanced from SO(3,2) to the SU(2,2) conformal symmetry. We point out that the quantum Hall effect naturally realizes the philosophy of twistor theory. In particular, emergence mechanism of fuzzy space-time is discussed somehow in detail.

  7. Topological Hubbard model and its high-temperature quantum Hall effect.

    PubMed

    Neupert, Titus; Santos, Luiz; Ryu, Shinsei; Chamon, Claudio; Mudry, Christopher

    2012-01-27

    The quintessential two-dimensional lattice model that describes the competition between the kinetic energy of electrons and their short-range repulsive interactions is the repulsive Hubbard model. We study a time-reversal symmetric variant of the repulsive Hubbard model defined on a planar lattice: Whereas the interaction is unchanged, any fully occupied band supports a quantized spin Hall effect. We show that at 1/2 filling of this band, the ground state develops spontaneously and simultaneously Ising ferromagnetic long-range order and a quantized charge Hall effect when the interaction is sufficiently strong. We ponder on the possible practical applications, beyond metrology, that the quantized charge Hall effect might have if it could be realized at high temperatures and without external magnetic fields in strongly correlated materials.

  8. Quantum Hall effect in semiconductor systems with quantum dots and antidots

    SciTech Connect

    Beltukov, Ya. M.; Greshnov, A. A.

    2015-04-15

    The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T ∼ 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.

  9. The effect of electron inertia in Hall-driven magnetic field penetration in electron-magnetohydrodynamics

    NASA Astrophysics Data System (ADS)

    Richardson, A. S.; Angus, J. R.; Swanekamp, S. B.; Rittersdorf, I. M.; Ottinger, P. F.; Schumer, J. W.

    2016-05-01

    Magnetic field penetration in electron-magnetohydrodynamics (EMHD) can be driven by density gradients through the Hall term [Kingsep et al., Sov. J. Plasma Phys. 10, 495 (1984)]. Particle-in-cell simulations have shown that a magnetic front can go unstable and break into vortices in the Hall-driven EMHD regime. In order to understand these results, a new fluid model had been derived from the Ly/Ln≪1 limit of EMHD, where Ly is the length scale along the front and Ln is the density gradient length scale. This model is periodic in the direction along the magnetic front, which allows the dynamics of the front to be studied independently of electrode boundary effects that could otherwise dominate the dynamics. Numerical solutions of this fluid model are presented that show for the first time the relation between Hall-driven EMHD, electron inertia, the Kelvin-Helmholtz (KH) instability, and the formation of magnetic vortices. These solutions show that a propagating magnetic front is unstable to the same KH mode predicted for a uniform plasma. This instability causes the electron flow to break up into vortices that are then driven into the plasma with a speed that is proportional to the Hall speed. This demonstrates that, in two-dimensional geometry with sufficiently low collisionality [collision rate ν ≲ vHall/(4 δe) ], Hall-driven magnetic penetration occurs not as a uniform shock front but rather as vortex-dominated penetration. Once the vortices form, the penetration speed is found to be nearly a factor of two larger than the redicted speed ( vHall/2 ) obtained from Burgers' equation in the one-dimensional limit.

  10. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Dissipationless spin-Hall current contribution in the extrinsic spin-Hall effect

    NASA Astrophysics Data System (ADS)

    Yan, Yu-Zhen; Li, Hui-Wu; Hu, Liang-Bin

    2009-07-01

    This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect, which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor (or metal). By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate, it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings (or may even be larger than the latter one). The theoretical results obtained are in good agreement with recent relevant experimental results.

  11. Noise fluctuations and drive dependence of the skyrmion Hall effect in disordered systems

    NASA Astrophysics Data System (ADS)

    Reichhardt, C.; Olson Reichhardt, C. J.

    2016-09-01

    Using a particle-based simulation model, we show that quenched disorder creates a drive-dependent skyrmion Hall effect as measured by the change in the ratio R={V}\\perp /{V}| | of the skyrmion velocity perpendicular (V ⊥) and parallel ({V}| | ) to an external drive. R is zero at depinning and increases linearly with increasing drive, in agreement with recent experimental observations. At sufficiently high drives where the skyrmions enter a free flow regime, R saturates to the disorder-free limit. This behavior is robust for a wide range of disorder strengths and intrinsic Hall angle values, and occurs whenever plastic flow is present. For systems with small intrinsic Hall angles, we find that the Hall angle increases linearly with external drive, as also observed in experiment. In the weak pinning regime where the skyrmion lattice depins elastically, R is nonlinear and the net direction of the skyrmion lattice motion can rotate as a function of external drive. We show that the changes in the skyrmion Hall effect correlate with changes in the power spectrum of the skyrmion velocity noise fluctuations. The plastic flow regime is associated with 1/f noise, while in the regime in which R has saturated, the noise is white with a weak narrow band signal, and the noise power drops by several orders of magnitude. At low drives, the velocity noise in the perpendicular and parallel directions is of the same order of magnitude, while at intermediate drives the perpendicular noise fluctuations are much larger.

  12. Valley Hall effect in disordered monolayer MoS2 from first principles

    NASA Astrophysics Data System (ADS)

    Olsen, Thomas; Souza, Ivo

    2015-09-01

    Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal symmetry is present, equal and opposite amounts of k -space Berry curvature accumulate in each of the two valleys. This is conveniently quantified by the integral of the Berry curvature over a single valley—the valley Hall conductivity. We generalize this definition to include contributions from disorder described with the supercell approach, by mapping ("unfolding") the Berry curvature from the folded Brillouin zone of the disordered supercell onto the normal Brillouin zone of the pristine crystal, and then averaging over several realizations of disorder. We use this scheme to study from first principles the effect of sulfur vacancies on the valley Hall conductivity of monolayer MoS2. In dirty samples the intrinsic valley Hall conductivity receives gating-dependent corrections that are only weakly dependent on the impurity concentration, consistent with side-jump scattering and the unfolded Berry curvature can be interpreted as a k -space resolved side jump. At low impurity concentrations skew scattering dominates, leading to a divergent valley Hall conductivity in the clean limit. The implications for the recently observed photoinduced anomalous Hall effect are discussed.

  13. Quantum diagrammatic theory of the extrinsic spin Hall effect in graphene

    NASA Astrophysics Data System (ADS)

    Milletarı, Mirco; Ferreira, Aires

    2016-10-01

    We present a rigorous microscopic theory of the extrinsic spin Hall effect in disordered graphene based on a nonperturbative quantum diagrammatic treatment incorporating skew scattering and anomalous (impurity-concentration-independent) quantum corrections on equal footing. The leading skew-scattering contribution to the spin Hall conductivity is shown to quantitatively agree with Boltzmann transport theory over a wide range of parameters. Our self-consistent approach, where all topologically equivalent noncrossing diagrams are resummed, unveils that the skewness generated by spin-orbit-active impurities deeply influences the anomalous component of the spin Hall conductivity, even in the weak-scattering regime. This seemingly counterintuitive result is explained by the rich sublattice structure of scattering potentials in graphene, for which traditional Gaussian disorder approximations fail to capture the intricate correlations between skew scattering and side jumps generated through diffusion. Finally, we assess the role of quantum interference corrections by evaluating an important subclass of crossing diagrams recently considered in the context of the anomalous Hall effect, the X and Ψ diagrams [A. Ado et al., Europhys. Lett. 111, 37004 (2015), 10.1209/0295-5075/111/37004]. We show that Ψ diagrams, encoding quantum coherent skew scattering, display a strong Fermi energy dependence, dominating the anomalous spin Hall component away from the Dirac point. Our findings have direct implications for nonlocal transport experiments in spin-orbit-coupled graphene systems.

  14. Can fractional quantum Hall effect be due to the formation of coherent wave structures in a 2D electron gas?

    NASA Astrophysics Data System (ADS)

    Mirza, Babur M.

    2016-05-01

    A microscopic theory of integer and fractional quantum Hall effects is presented here. In quantum density wave representation of charged particles, it is shown that, in a two-dimensional electron gas coherent structures form under the low temperature and high density conditions. With a sufficiently high applied magnetic field, the combined N particle quantum density wave exhibits collective periodic oscillations. As a result the corresponding quantum Hall voltage function shows a step-wise change in multiples of the ratio h/e2. At lower temperatures further subdivisions emerge in the Hall resistance, exhibiting the fractional quantum Hall effect.

  15. Experimental comparison of ring and diamond shaped planar Hall effect bridge magnetic field sensors

    NASA Astrophysics Data System (ADS)

    Henriksen, Anders Dahl; Rizzi, Giovanni; Hansen, Mikkel Fougt

    2015-09-01

    Planar Hall effect magnetic field sensors with ring and diamond shaped geometries are experimentally compared with respect to their magnetic field sensitivity and total signal variation. Theoretically, diamond shaped sensors are predicted to be 41% more sensitive than corresponding ring shaped sensors for negligible shape anisotropy. To experimentally validate this, we have fabricated both sensor geometries in the exchange-biased stack Ni80Fe20(tFM)/Cu(tCu)/Mn80Ir20(10 nm) with tFM=10 , 20, and 30 nm and tCu=0 , 0.3, and 0.6 nm. Sensors from each stack were characterized by external magnetic field sweeps, which were analyzed in terms of a single domain model. The total signal variation of the diamond sensors was generally found to be about 40% higher than that for the ring sensors in agreement with theoretical predictions. However, for the low-field sensitivity, the corresponding improvement varied from 0% to 35% where the largest improvement was observed for sensor stacks with comparatively strong exchange bias. This is explained by the ring sensors being less affected by shape anisotropy than the diamond sensors. To study the effect of shape anisotropy, we also characterized sensors that were surrounded by the magnetic stack with a small gap of 3 μm. These sensors were found to be less affected by shape anisotropy and thus showed higher low-field sensitivities.

  16. Extrinsic spin Hall effect from anisotropic Rashba spin-orbit coupling in graphene

    NASA Astrophysics Data System (ADS)

    Yang, H.-Y.; Huang, Chunli; Ochoa, H.; Cazalilla, M. A.

    2016-02-01

    We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.

  17. A free-trailing vane flow direction indicator employing a linear output Hall effect transducer

    NASA Technical Reports Server (NTRS)

    Zell, Peter T.; Mcmahon, Robert D.

    1988-01-01

    The Hall effect vane (HEV) was developed to measure flow angularity in the NASA 40-by-80-foot and 80-by-120-foot wind tunnels. This indicator is capable of sensing flow direction at air speeds from 5 to 300 knots and over a + or - 40 deg angle range with a resolution of 0.1 deg. A free-trailing vane configuration employing a linear output Hall effect transducer as a shaft angle resolver was used. The current configuration of the HEV is designed primarily for wind tunnel calibration testing; however, other potential applications include atmospheric, flight or ground research testing. The HEV met initial design requirements.

  18. Berry phases and the intrinsic thermal Hall effect in high-temperature cuprate superconductors.

    PubMed

    Cvetkovic, Vladimir; Vafek, Oskar

    2015-01-01

    Bogolyubov quasiparticles move in a practically uniform magnetic field in the vortex state of high-temperature cuprate superconductors. When set in motion by an externally applied heat current, the quasiparticles' trajectories may bend, causing a temperature gradient perpendicular to the heat current and the applied magnetic field, resulting in the thermal Hall effect. Here we relate this effect to the Berry curvature of quasiparticle magnetic sub-bands, and calculate the dependence of the intrinsic thermal Hall conductivity on superconductor's temperature, magnetic field and the amplitude of the d-wave pairing. The intrinsic contribution to thermal Hall conductivity displays a rapid onset with increasing temperature, which compares favourably with existing experiments at high magnetic field on the highest purity samples. Because such temperature onset is related to the pairing amplitude, our finding may help to settle a much-debated question of the bulk value of the pairing strength in cuprate superconductors in magnetic field. PMID:25758469

  19. Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect.

    SciTech Connect

    Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; Chang, Houchen; Pearson, John E.; Wu, Mingzhong; Ketterson, John B.; Hoffmann, Axel

    2015-11-06

    We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y3Fe5O12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range in-plane to nearly perpendicular. We find that for magnetic fields that are mostly out-of-plane, an imaginary component of the spin mixing conductance is required to model our data.

  20. Spontaneous magnetization and anomalous Hall effect in an emergent Dice lattice

    PubMed Central

    Dutta, Omjyoti; Przysiężna, Anna; Zakrzewski, Jakub

    2015-01-01

    Ultracold atoms in optical lattices serve as a tool to model different physical phenomena appearing originally in condensed matter. To study magnetic phenomena one needs to engineer synthetic fields as atoms are neutral. Appropriately shaped optical potentials force atoms to mimic charged particles moving in a given field. We present the realization of artificial gauge fields for the observation of anomalous Hall effect. Two species of attractively interacting ultracold fermions are considered to be trapped in a shaken two dimensional triangular lattice. A combination of interaction induced tunneling and shaking can result in an emergent Dice lattice. In such a lattice the staggered synthetic magnetic flux appears and it can be controlled with external parameters. The obtained synthetic fields are non-Abelian. Depending on the tuning of the staggered flux we can obtain either anomalous Hall effect or its quantized version. Our results are reminiscent of Anomalous Hall conductivity in spin-orbit coupled ferromagnets. PMID:26057635

  1. Experimental Observation of the Inverse Spin Hall Effect at Room Temperature

    SciTech Connect

    Liu, Baoli; Shi, Junren; Wang, Wenxin; Zhao, Hongming; Li, Dafang; Zhang, Shoucheng; Xue, Qikun; Chen, Dongmin; /Beijing, Inst. Phys.

    2010-03-16

    We observe the inverse spin Hall effect in a two-dimensional electron gas confined in Al-GaAs/InGaAs quantum wells. Specifically, they find that an inhomogeneous spin density induced by the optical injection gives rise to an electric current transverse to both the spin polarization and its gradient. The spin Hall conductivity can be inferred from such a measurement through the Einstein relation and the onsager relation, and is found to have the order of magnitude of 0.5(e{sup 2}/h). The observation is made at the room temperature and in samples with macroscopic sizes, suggesting that the inverse spin Hall effects is a robust macroscopic transport phenomenon.

  2. Effects of magnetic field and Hall current to the blood velocity and LDL transfer

    NASA Astrophysics Data System (ADS)

    Abdullah, I.; Naser, N.; Talib, A. H.; Mahali, S.

    2015-09-01

    The magnetic field and Hall current effects have been considered on blood velocity and concentration of low-density lipoprotein (LDL). It is important to observe those effects to the flowing blood in a stenosed artery. The analysis from the obtained results may be useful to some clinical procedures, such as MRI, where the radiologists may have more information in the investigations before cardiac operations could be done. In this study, the uniform magnetic field and Hall current are applied to the Newtonian blood flow through an artery having a cosine-shaped stenosis. The governing equations are coupled with mass transfer and solved employing a finite difference Marker and Cell (MAC) method with an appropriate initial and boundary conditions. The graphical results of velocity profiles and LDL concentration are presented in this paper and the results show that the velocity increases and concentration decreases as Hall parameter increased.

  3. Quantum Hall effect in black phosphorus two-dimensional electron system

    NASA Astrophysics Data System (ADS)

    Li, Likai; Yang, Fangyuan; Ye, Guo Jun; Zhang, Zuocheng; Zhu, Zengwei; Lou, Wenkai; Zhou, Xiaoying; Li, Liang; Watanabe, Kenji; Taniguchi, Takashi; Chang, Kai; Wang, Yayu; Chen, Xian Hui; Zhang, Yuanbo

    2016-07-01

    The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm2 V-1 s-1. The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

  4. Metallic phase of the quantum Hall effect in four-dimensional space

    NASA Astrophysics Data System (ADS)

    Edge, Jonathan; Tworzydlo, Jakub; Beenakker, Carlo

    2013-03-01

    We study the phase diagram of the quantum Hall effect in four-dimensional (4D) space. Unlike in 2D, in 4D there exists a metallic as well as an insulating phase, depending on the disorder strength. The critical exponent ν ~ 1 . 2 of the diverging localization length at the quantum Hall insulator-to-metal transition differs from the semiclassical value ν = 1 of 4D Anderson transitions in the presence of time-reversal symmetry. Our numerical analysis is based on a mapping of the 4D Hamiltonian onto a 1D dynamical system, providing a route towards the experimental realization of the 4D quantum Hall effect. NanoCTM, FOM/NWO, ERC

  5. Quantum Hall effect in black phosphorus two-dimensional electron system.

    PubMed

    Li, Likai; Yang, Fangyuan; Ye, Guo Jun; Zhang, Zuocheng; Zhu, Zengwei; Lou, Wenkai; Zhou, Xiaoying; Li, Liang; Watanabe, Kenji; Taniguchi, Takashi; Chang, Kai; Wang, Yayu; Chen, Xian Hui; Zhang, Yuanbo

    2016-07-01

    The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

  6. Topological Insulators in Magnetic Fields: Quantum Hall Effect and Edge Channels with a Nonquantized θ Term

    NASA Astrophysics Data System (ADS)

    Sitte, M.; Rosch, A.; Altman, E.; Fritz, L.

    2012-03-01

    We investigate how a magnetic field induces one-dimensional edge channels when the two-dimensional surface states of three-dimensional topological insulators become gapped. The Hall effect, measured by contacting those channels, remains quantized even in situations where the θ term in the bulk and the associated surface Hall conductivities, σxyS, are not quantized due to the breaking of time-reversal symmetry. The quantization arises as the θ term changes by ±2πn along a loop around n edge channels. Model calculations show how an interplay of orbital and Zeeman effects leads to quantum Hall transitions, where channels get redistributed along the edges of the crystal. The network of edges opens new possibilities to investigate the coupling of edge channels.

  7. Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect

    NASA Astrophysics Data System (ADS)

    Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; Chang, Houchen; Pearson, John E.; Wu, Mingzhong; Ketterson, John B.; Hoffmann, Axel

    2015-11-01

    We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y3Fe5O12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range from in plane to nearly perpendicular. When compared with theory, we find that the real and imaginary parts of the spin mixing conductance have out-of-plane angular dependences.

  8. Spontaneous magnetization and anomalous Hall effect in an emergent Dice lattice

    NASA Astrophysics Data System (ADS)

    Dutta, Omjyoti; Przysiężna, Anna; Zakrzewski, Jakub

    2015-06-01

    Ultracold atoms in optical lattices serve as a tool to model different physical phenomena appearing originally in condensed matter. To study magnetic phenomena one needs to engineer synthetic fields as atoms are neutral. Appropriately shaped optical potentials force atoms to mimic charged particles moving in a given field. We present the realization of artificial gauge fields for the observation of anomalous Hall effect. Two species of attractively interacting ultracold fermions are considered to be trapped in a shaken two dimensional triangular lattice. A combination of interaction induced tunneling and shaking can result in an emergent Dice lattice. In such a lattice the staggered synthetic magnetic flux appears and it can be controlled with external parameters. The obtained synthetic fields are non-Abelian. Depending on the tuning of the staggered flux we can obtain either anomalous Hall effect or its quantized version. Our results are reminiscent of Anomalous Hall conductivity in spin-orbit coupled ferromagnets.

  9. Hall viscosity

    NASA Astrophysics Data System (ADS)

    Read, Nicholas

    2015-03-01

    theoretical calculations of other properties, and can be used as a diagnostic tool to distinguish phases. The talk will review these results, describing different microscopic approaches to calculating Hall viscosity, robustness, and the relation with effective field theories. Research supported by NSF DMR.

  10. Hall effect study of electron irradiated Si(Li)

    NASA Technical Reports Server (NTRS)

    Stannard, J.

    1971-01-01

    Measurement of the Hall coefficient as a function of temperature between 15 and 300 K allows the separate determination of donor and acceptor concentrations in silicon samples which were irradiated at 240 K by 1-MeV electrons and then thermally annealed at 300 K. In both lithium- and phosphorus-doped silicon irradiation increased the acceptor concentration and decreased the donor concentration due to the formation of vacancy donor pairs. Annealing did not change either concentration in phosphorus-doped silicon and caused both concentrations to decrease in silicon doped with moderate amounts of lithium. In addition to this, in both lithium- and phosphorus-doped silicon the concentration and energy level of the A center were measured at each point in the sample's history. This experiment was limited to float-zoned silicon doped with less than 6 x 10 to the 14th power donors per cu cm.

  11. High performance electronic device for the measurement of the inverse spin Hall effect

    NASA Astrophysics Data System (ADS)

    Gómez, Javier E.; Guillén, Matías; Butera, Alejandro; Albaugh, Neil P.

    2016-02-01

    We have developed a high performance analog electronic device that can be used for the measurement of the inverse spin Hall effect (ISHE) as a function of the applied magnetic field. The electronic circuit is based on the synchronous detection technique with a careful selection of the active components in order to optimize the response in this application. The electronic accessory was adapted for the simultaneous measurement of the ISHE signal and the microwave absorption in an electron spin resonance spectrometer and tested with a bilayer sample of 5 nm of permalloy (Ni80Fe20) and 5 nm of tantalum. The response of the electronic device was characterized as a function of the microwave power, the amplitude and frequency of the modulation signal, and the relative phase between signal and reference. This last characterization reveals a simple method to put in phase the signal with the reference. The maximum signal to noise ratio was achieved for a modulation frequency between 6 and 12 kHz, for the largest possible values of field modulation amplitude and microwave power.

  12. Emergent Chiral Spin Liquid: Fractional Quantum Hall Effect in a Kagome Heisenberg Model

    PubMed Central

    Gong, Shou-Shu; Zhu, Wei; Sheng, D. N.

    2014-01-01

    The fractional quantum Hall effect (FQHE) realized in two-dimensional electron systems under a magnetic field is one of the most remarkable discoveries in condensed matter physics. Interestingly, it has been proposed that FQHE can also emerge in time-reversal invariant spin systems, known as the chiral spin liquid (CSL) characterized by the topological order and the emerging of the fractionalized quasiparticles. A CSL can naturally lead to the exotic superconductivity originating from the condense of anyonic quasiparticles. Although CSL was highly sought after for more than twenty years, it had never been found in a spin isotropic Heisenberg model or related materials. By developing a density-matrix renormalization group based method for adiabatically inserting flux, we discover a FQHE in a isotropic kagome Heisenberg model. We identify this FQHE state as the long-sought CSL with a uniform chiral order spontaneously breaking time reversal symmetry, which is uniquely characterized by the half-integer quantized topological Chern number protected by a robust excitation gap. The CSL is found to be at the neighbor of the previously identified Z2 spin liquid, which may lead to an exotic quantum phase transition between two gapped topological spin liquids. PMID:25204626

  13. High performance electronic device for the measurement of the inverse spin Hall effect.

    PubMed

    Gómez, Javier E; Guillén, Matías; Butera, Alejandro; Albaugh, Neil P

    2016-02-01

    We have developed a high performance analog electronic device that can be used for the measurement of the inverse spin Hall effect (ISHE) as a function of the applied magnetic field. The electronic circuit is based on the synchronous detection technique with a careful selection of the active components in order to optimize the response in this application. The electronic accessory was adapted for the simultaneous measurement of the ISHE signal and the microwave absorption in an electron spin resonance spectrometer and tested with a bilayer sample of 5 nm of permalloy (Ni80Fe20) and 5 nm of tantalum. The response of the electronic device was characterized as a function of the microwave power, the amplitude and frequency of the modulation signal, and the relative phase between signal and reference. This last characterization reveals a simple method to put in phase the signal with the reference. The maximum signal to noise ratio was achieved for a modulation frequency between 6 and 12 kHz, for the largest possible values of field modulation amplitude and microwave power. PMID:26931877

  14. Quantum spin Hall effect in α -Sn /CdTe(001 ) quantum-well structures

    NASA Astrophysics Data System (ADS)

    Küfner, Sebastian; Matthes, Lars; Bechstedt, Friedhelm

    2016-01-01

    The electronic and topological properties of heterovalent and heterocrystalline α -Sn/CdTe(001) quantum wells (QWs) are studied in dependence on the thickness of α -Sn by means of ab initio calculations. We calculate the topological Z2 invariants of the respective bulk crystals, which identify α -Sn as strong three-dimensional (3D) topological insulators (TIs), whereas CdTe is a trivial insulator. We predict the existence of two-dimensional (2D) topological interface states between both materials and show that a topological phase transition from a trivial insulating phase into the quantum spin Hall (QSH) phase in the QW structures occurs at much higher thicknesses than in the HgTe case. The QSH effect is characterized by the localization, dispersion, and spin polarization of the topological interface states. We address the distinction of the 3D and 2D TI characters of the studied QW structures, which is inevitable for an understanding of the underlying quantum state of matter. The 3D TI nature is characterized by two-dimensional topological interface states, while the 2D phase exhibits one-dimensional edge states. The two different state characteristics are often intermixed in the discussion of the topology of 2D QW structures, especially, the comparison of ab initio calculations and experimental transport studies.

  15. Valley Hall effect in silicene and hydrogenated silicene ruled by grain boundaries: An ab initio investigation

    NASA Astrophysics Data System (ADS)

    Miwa, R. H.; Kagimura, R.; Lima, Matheus P.; Fazzio, A.

    2015-05-01

    We have performed an ab initio theoretical study of the energetic stability and the electronic properties of pristine and hydrogen-adsorbed grain boundaries (GBs) in silicene. We find that GBs in silicene present lower formation energy when compared with their counterparts in graphene. Removing the inversion symmetry, by applying an external electric field perpendicular to the silicene sheet, we verify the formation of valley-indexed metallic states lying along the GBs, characterizing the quantum valley Hall effect (QVHE). Here, we find the maintenance of the QVHE upon the presence of disordered and asymmetric geometries along the GBs. Those metallic states are suppressed upon the adsorption of H adatoms along the GBs. The H adatoms promote an unbalance on the electronic occupation of the unsaturated π electrons beside the hydrogenated GB rows, giving rise to (i) a net magnetic moment on the Si atoms along the edge sites of the hydrogenated GBs and (ii) an electronic band structure characterized by spin-polarized valley states protected against backscattering processes.

  16. Topological Domain Wall and Valley Hall Effect in Charge Ordered Phase of Molecular Dirac Fermion System α-(BEDT-TTF)2I3

    NASA Astrophysics Data System (ADS)

    Matsuno, Genki; Omori, Yukiko; Eguchi, Takaaki; Kobayashi, Akito

    2016-09-01

    The topological domain wall and valley Hall effect are theoretically investigated in the molecular conductor α-(BEDT-TTF)2I3. By using the mean-field theory in an extended Hubbard model, it is demonstrated under a cylinder boundary condition that a domain wall emerges in the charge ordered phase, and exhibits a topological nature near the phase transition to the massless Dirac Fermion phase. The topological nature is well characterized by the Berry curvature, which has opposite signs in two charge ordered phases divided by the domain wall, and gives rise to the valley Hall conductivity with opposite signs, enabling these phases to be distinguished. It is also found that the valley Hall conductivity in the tilted Dirac cones exhibits a characteristic double-peak structure as a function of chemical potential using the semi classical formalism.

  17. Devil's Staircase Phase Diagram of the Fractional Quantum Hall Effect in the Thin-Torus Limit

    NASA Astrophysics Data System (ADS)

    Rotondo, Pietro; Molinari, Luca Guido; Ratti, Piergiorgio; Gherardi, Marco

    2016-06-01

    After more than three decades, the fractional quantum Hall effect still poses challenges to contemporary physics. Recent experiments point toward a fractal scenario for the Hall resistivity as a function of the magnetic field. Here, we consider the so-called thin-torus limit of the Hamiltonian describing interacting electrons in a strong magnetic field, restricted to the lowest Landau level, and we show that it can be mapped onto a one-dimensional lattice gas with repulsive interactions, with the magnetic field playing the role of the chemical potential. The statistical mechanics of such models leads us to interpret the sequence of Hall plateaux as a fractal phase diagram whose landscape shows a qualitative agreement with experiments.

  18. Devil's Staircase Phase Diagram of the Fractional Quantum Hall Effect in the Thin-Torus Limit.

    PubMed

    Rotondo, Pietro; Molinari, Luca Guido; Ratti, Piergiorgio; Gherardi, Marco

    2016-06-24

    After more than three decades, the fractional quantum Hall effect still poses challenges to contemporary physics. Recent experiments point toward a fractal scenario for the Hall resistivity as a function of the magnetic field. Here, we consider the so-called thin-torus limit of the Hamiltonian describing interacting electrons in a strong magnetic field, restricted to the lowest Landau level, and we show that it can be mapped onto a one-dimensional lattice gas with repulsive interactions, with the magnetic field playing the role of the chemical potential. The statistical mechanics of such models leads us to interpret the sequence of Hall plateaux as a fractal phase diagram whose landscape shows a qualitative agreement with experiments. PMID:27391740

  19. Hall Effects on Mhd Flow Past an Accelerated Plate with Heat Transfer

    NASA Astrophysics Data System (ADS)

    Sundarnath, J. K.; Muthucumarswamy, R.

    2015-02-01

    Hall current and rotation on an MHD flow past an accelerated horizontal plate relative to a rotating fluid, in the presence of heat transfer has been analyzed. The effects of the Hall parameter, Hartmann number, rotation parameter (non-dimensional angular velocity), Grashof's number and Prandtl number on axial and transverse velocity profiles are presented graphically. It is found that with the increase in the Hartmann number, the axial and transverse velocity components increase in a direction opposite to that of obtained by increasing the Hall parameter and rotation parameter. Also, when Ω=M2m /(1 + m2 ) , it is observed that the transverse velocity component vanishes and axial velocity attains a maximum value.

  20. Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime.

    PubMed

    Burkov, A A; Balents, Leon

    2003-08-01

    We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.

  1. Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

    NASA Astrophysics Data System (ADS)

    Diniz, G. S.; Guassi, M. R.; Qu, F.

    2013-12-01

    We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.

  2. Fractional quantum Hall effect at Landau level filling ν = 4/11

    SciTech Connect

    Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-01-09

    In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.

  3. Fractional quantum Hall effect at Landau level filling ν = 4/11

    DOE PAGES

    Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-01-09

    In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.

  4. Effective field theory and projective construction for Zk parafermion fractional quantum Hall states

    NASA Astrophysics Data System (ADS)

    Barkeshli, Maissam; Wen, Xiao-Gang

    2010-04-01

    The projective construction is a powerful approach to deriving the bulk and edge field theories of non-Abelian fractional quantum Hall (FQH) states and yields an understanding of non-Abelian FQH states in terms of the simpler integer quantum Hall states. Here we show how to apply the projective construction to the Zk parafermion (Laughlin/Moore-Read/Read-Rezayi) FQH states, which occur at filling fraction ν=k/(kM+2) . This allows us to derive the bulk low-energy effective field theory for these topological phases, which is found to be a Chern-Simons theory at level 1 with a U(M)×Sp(2k) gauge field. This approach also helps us understand the non-Abelian quasiholes in terms of holes of the integer quantum Hall states.

  5. 3d Transition Metal Adsorption Induced the valley-polarized Anomalous Hall Effect in Germanene

    PubMed Central

    Zhou, P.; Sun, L. Z.

    2016-01-01

    Based on DFT + U and Berry curvature calculations, we study the electronic structures and topological properties of 3d transition metal (TM) atom (from Ti to Co) adsorbed germanene (TM-germanene). We find that valley-polarized anomalous Hall effect (VAHE) can be realized in germanene by adsorbing Cr, Mn, or Co atoms on its surface. A finite valley Hall voltage can be easily detected in their nanoribbon, which is important for valleytronics devices. Moreover, different valley-polarized current and even reversible valley Hall voltage can be archived by shifting the Fermi energy of the systems. Such versatile features of the systems show potential in next generation electronics devices. PMID:27312176

  6. Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect.

    PubMed

    Choi, Won Young; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Koo, Hyun Cheol; Johnson, Mark

    2015-08-01

    The spin-orbit interaction in two-dimensional electron systems provides an exceptionally rich area of research. Coherent spin precession in a Rashba effective magnetic field in the channel of a spin field-effect transistor and the spin Hall effect are the two most compelling topics in this area. Here, we combine these effects to provide a direct demonstration of the ballistic intrinsic spin Hall effect and to demonstrate a technique for an all-electric measurement of the Datta-Das conductance oscillation, that is, the oscillation in the source-drain conductance due to spin precession. Our hybrid device has a ferromagnet electrode as a spin injector and a spin Hall detector. Results from multiple devices with different channel lengths map out two full wavelengths of the Datta-Das oscillation. We also use the original Datta-Das technique with a single device of fixed length and measure the channel conductance as the gate voltage is varied. Our experiments show that the ballistic spin Hall effect can be used for efficient injection or detection of spin polarized electrons, thereby enabling the development of an integrated spin transistor. PMID:26005997

  7. Hall effect on a Merging Formation Process of a Field-Reversed Configuration

    NASA Astrophysics Data System (ADS)

    Kaminou, Yasuhiro; Guo, Xuehan; Inomoto, Michiaki; Ono, Yasushi; Horiuchi, Ritoku

    2015-11-01

    Counter-helicity spheromak merging is one of the formation methods of a Field-Reversed Configuration (FRC). In counter-helicity spheromak merging, two spheromaks with opposing toroidal fields merge together, through magnetic reconnection events and relax into a FRC, which has no or little toroidal field. This process contains magnetic reconnection and a relaxation phenomena, and the Hall effect has some essential effects on these process because the X-point in the magnetic reconnection or the O-point of the FRC has no or little magnetic field. However, the Hall effect as both global and local effect on counter-helicity spheromak merging has not been elucidated. In this poster, we conducted 2D/3D Hall-MHD simulations and experiments of counter-helicity spheromak merging. We find that the Hall effect enhances the reconnection rate, and reduces the generation of toroidal sheared-flow. The suppression of the ``slingshot effect'' affects the relaxation process. We will discuss details in the poster.

  8. Spin-orbit coupling and quantum spin Hall effect for neutral atoms without spin flips.

    PubMed

    Kennedy, Colin J; Siviloglou, Georgios A; Miyake, Hirokazu; Burton, William Cody; Ketterle, Wolfgang

    2013-11-27

    We propose a scheme which realizes spin-orbit coupling and the quantum spin Hall effect for neutral atoms in optical lattices without relying on near resonant laser light to couple different spin states. The spin-orbit coupling is created by modifying the motion of atoms in a spin-dependent way by laser recoil. The spin selectivity is provided by Zeeman shifts created with a magnetic field gradient. Alternatively, a quantum spin Hall Hamiltonian can be created by all-optical means using a period-tripling, spin-dependent superlattice. PMID:24329453

  9. Spin-torque switching of a nano-magnet using giant spin hall effect

    SciTech Connect

    Penumatcha, Ashish V. Das, Suprem R.; Chen, Zhihong; Appenzeller, Joerg

    2015-10-15

    The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

  10. Large-Chern-number quantum anomalous Hall effect in thin-film topological crystalline insulators.

    PubMed

    Fang, Chen; Gilbert, Matthew J; Bernevig, B Andrei

    2014-01-31

    We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields. PMID:24580476

  11. Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4

    DOE PAGES

    Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; Canfield, Paul C.; Shastry, B. Sriram; Sengupta, Pinaki; Panagopoulos, Christos

    2016-05-11

    We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. In conclusion, we propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

  12. Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4

    NASA Astrophysics Data System (ADS)

    Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; Canfield, Paul C.; Shastry, B. Sriram; Sengupta, Pinaki; Panagopoulos, Christos

    2016-05-01

    We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. We propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

  13. Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4

    NASA Astrophysics Data System (ADS)

    Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; Canfield, Paul C.; Shastry, B. Sriram; Sengupta, Pinaki; Panagopoulos, Christos

    We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low-temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. We suggest that both hysteretic MR and AHE arise from the formation of complex non-coplanar structures at magnetic domain walls. Current address: Department of Applied Physics and Applied Mathematics, Columbia University.

  14. Spin Hall effect-controlled magnetization dynamics in NiMnSb

    SciTech Connect

    Dürrenfeld, P. Ranjbar, M.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Åkerman, J.

    2015-05-07

    We investigate the influence of a spin current generated from a platinum layer on the ferromagnetic resonance (FMR) properties of an adjacent ferromagnetic layer composed of the halfmetallic half-Heusler material NiMnSb. Spin Hall nano-oscillator devices are fabricated, and the technique of spin torque FMR is used to locally study the magnetic properties as in-plane anisotropies and resonance fields. A change in the FMR linewidth, in accordance with the additional spin torque produced by the spin Hall effect, is present for an applied dc current. For sufficiently large currents, this should yield auto-oscillations, which however are not achievable in the present device geometry.

  15. Hall effect and conduction anisotropy in the organic conductor (TMTSF)2PF6

    PubMed

    Mihaly; Kezsmarki; Zamborszky; Forro

    2000-03-20

    Both the Hall effect and the ab(')-plane conduction anisotropy are directly addressing the unconventional normal phase properties of the Bechgaard salt (TMTSF)2PF6. We found that the dramatic reduction of the carrier density deduced from recent optical data is not reflected in an enhanced Hall resistance. The pressure and temperature dependence of the b(')-direction resistivity reveal isotropic relaxation time and do not require explanations beyond the Fermi liquid theory. Our results allow a coherent-diffusive transition in the interchain carrier propagation, however the possible crossover to Luttinger liquid behavior is placed at an energy scale above room temperature.

  16. Effects of ionization distribution on plasma beam focusing characteristics in Hall thrusters

    SciTech Connect

    Ning Zhongxi; Liu Hui; Yu Daren; Zhou Zhongxiang

    2011-11-28

    The relationship between ionization distribution and divergence of plasma beam in a Hall thruster is investigated using spectrum and probe methods. Experimental results indicate that the shift of ionization region towards the exit of channel causes the reduction of accelerating field and the enhancement of electron thermal pressure effect, which result in further deviation of equipotential lines to magnetic field lines and further increase in divergence of plasma beam. It is, therefore, suggested that to put the ionization region deep inside the channel and separate it from the acceleration region at the design, and development stage is helpful to improve the plasma beam focusing characteristics of a Hall thruster.

  17. Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

    SciTech Connect

    Laczkowski, P.; Rojas-Sánchez, J.-C.

    2014-04-07

    We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

  18. Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

    NASA Astrophysics Data System (ADS)

    Laczkowski, P.; Rojas-Sánchez, J.-C.; Savero-Torres, W.; Jaffrès, H.; Reyren, N.; Deranlot, C.; Notin, L.; Beigné, C.; Marty, A.; Attané, J.-P.; Vila, L.; George, J.-M.; Fert, A.

    2014-04-01

    We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

  19. A programmable quantum current standard from the Josephson and the quantum Hall effects

    SciTech Connect

    Poirier, W. Lafont, F.; Djordjevic, S.; Schopfer, F.; Devoille, L.

    2014-01-28

    We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter, and a simplified closure of the quantum metrological triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

  20. Disorder effects in the quantum Hall effect of graphene p-n junctions

    NASA Astrophysics Data System (ADS)

    Li, Jian; Shen, Shun-Qing

    2008-11-01

    The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

  1. Crossover behavior of the anomalous Hall effect and anomalous nernst effect in itinerant ferromagnets.

    PubMed

    Miyasato, T; Abe, N; Fujii, T; Asamitsu, A; Onoda, S; Onose, Y; Nagaosa, N; Tokura, Y

    2007-08-24

    The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are experimentally investigated in a variety of ferromagnetic metals including pure transition metals, oxides, and chalcogenides, whose resistivities range over 5 orders of magnitude. For these ferromagnets, the transverse conductivity sigma{xy} versus the longitudinal conductivity sigma{xx} shows a crossover behavior with three distinct regimes in accordance qualitatively with a recent unified theory of the intrinsic and extrinsic AHE. We also found that the transverse Peltier coefficient alpha{xy} for the ANE obeys the Mott rule. These results offer a coherent and semiquantitative understanding of the AHE and ANE to an issue of controversy for many decades.

  2. Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

    SciTech Connect

    Zhang, Peng; Wu, Di; Jiang, Zhengsheng; Sang, Hai E-mail: haisang@nju.edu.cn; Lin, Weiwei E-mail: haisang@nju.edu.cn

    2014-02-14

    Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperature of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.

  3. A syringe injection rate detector employing a dual Hall-effect sensor configuration.

    PubMed

    Mukherjee, Biswarup; George, Boby; Sivaprakasam, Mohanasankar

    2013-01-01

    Injection of fluids in the body using needle syringes is a standard clinical practice. The rate of injection can have various pathological effects on the body such as the pain perceived or in case of anesthesia, the amount of akinesia attained. Hence, a training system with a modified syringe employing a simple measurement scheme where a trainee can observe and practice the rate of injection prior to administering on actual human subjects, can be of great value towards reduction of complications in real life situations. In this paper, we develop a system for measurement of syringe injection rate with two Hall-effect sensors. Ring magnets attached to the body of the syringe along with the dual Hall-effect sensor configuration help in determining the position of the piston with respect to the syringe body. The two Hall-sensors are arranged in a differential configuration such that a linear relationship is obtained between the volume of liquid in the syringe (in ml) and the Hall-effect sensor output voltages. A prototype developed validated the measurement scheme. The rate of injection was displayed in real-time with a LabVIEW based Virtual Instrument. The error was within acceptable limits illustrating its efficacy for practical training purposes.

  4. The Effect of Residence Hall Judicial Policies on Attitudes towards Rule Violating Behaviors.

    ERIC Educational Resources Information Center

    Triplet, Rodney G.; And Others

    Control over environmental events has been shown to reduce the behavioral and psychological impact of environmental stress. To assess the effect of residence hall judicial policies on attitudes toward rule violating behavior, 93 college freshmen (36 males, 56 females, 1 unreported), randomly assigned to one of four dormitories (social contract or…

  5. The Effect of Residence Hall Living at College on Attainment of the Baccalaureate Degree.

    ERIC Educational Resources Information Center

    Levin, Bernard H.; Clowes, Darrel A.

    1982-01-01

    Examines the relationship between living environment and educational progress in a longitudinal study of 686 college students. Findings confirmed demographic differences and higher graduation rate; but an independent effect of residence hall living on educational progress was not confirmed. Transfer influences were also evaluated. (Author/JAC)

  6. Power Reduction of the Air-Breathing Hall-Effect Thruster

    NASA Astrophysics Data System (ADS)

    Kim, Sungrae

    Electric propulsion system is spotlighted as the next generation space propulsion system due to its benefits; one of them is specific impulse. While there are a lot of types in electric propulsion system, Hall-Effect Thruster, one of electric propulsion system, has higher thrust-to-power ratio and requires fewer power supplies for operation in comparison to other electric propulsion systems, which means it is optimal for long space voyage. The usual propellant for Hall-Effect Thruster is Xenon and it is used to be stored in the tank, which may increase the weight of the thruster. Therefore, one theory that uses the ambient air as a propellant has been proposed and it is introduced as Air-Breathing Hall-Effect Thruster. Referring to the analysis on Air-Breathing Hall-Effect Thruster, the goal of this paper is to reduce the power of the thruster so that it can be applied to real mission such as satellite orbit adjustment. To reduce the power of the thruster, two assumptions are considered. First one is changing the altitude for the operation, while another one is assuming the alpha value that is electron density to ambient air density. With assumptions above, the analysis was done and the results are represented. The power could be decreased to 10s˜1000s with the assumptions. However, some parameters that do not satisfy the expectation, which would be the question for future work, and it will be introduced at the end of the thesis.

  7. Fractional quantum Hall effect on the two-sphere: A matrix model proposal

    SciTech Connect

    Morariu, Bogdan; Polychronakos, Alexios P.

    2005-12-15

    We present a Chern-Simons matrix model describing the fractional quantum Hall effect on the two sphere. We demonstrate the equivalence of our proposal to particular restrictions of the Calogero-Sutherland model, reproduce the quantum states and filling fraction and show the compatibility of our result with the Haldane spherical wave functions.

  8. Perceptions about Residence Hall Wingmates and Alcohol-Related Secondhand Effects among College Freshmen

    ERIC Educational Resources Information Center

    Boekeloo, Bradley O.; Bush, Elizabeth N.; Novik, Melinda G.

    2009-01-01

    Objective: The authors examined the secondhand effects among college freshmen of others' alcohol use and related student characteristics, and perceptions about residence hallmates. Participants: The authors surveyed 509 incoming freshmen residing in predominantly freshman residence halls. Methods: The authors administered a Web-based survey 2…

  9. A syringe injection rate detector employing a dual Hall-effect sensor configuration.

    PubMed

    Mukherjee, Biswarup; George, Boby; Sivaprakasam, Mohanasankar

    2013-01-01

    Injection of fluids in the body using needle syringes is a standard clinical practice. The rate of injection can have various pathological effects on the body such as the pain perceived or in case of anesthesia, the amount of akinesia attained. Hence, a training system with a modified syringe employing a simple measurement scheme where a trainee can observe and practice the rate of injection prior to administering on actual human subjects, can be of great value towards reduction of complications in real life situations. In this paper, we develop a system for measurement of syringe injection rate with two Hall-effect sensors. Ring magnets attached to the body of the syringe along with the dual Hall-effect sensor configuration help in determining the position of the piston with respect to the syringe body. The two Hall-sensors are arranged in a differential configuration such that a linear relationship is obtained between the volume of liquid in the syringe (in ml) and the Hall-effect sensor output voltages. A prototype developed validated the measurement scheme. The rate of injection was displayed in real-time with a LabVIEW based Virtual Instrument. The error was within acceptable limits illustrating its efficacy for practical training purposes. PMID:24110792

  10. Quantum Hall effect in an InAs /AlSb double quantum well

    NASA Astrophysics Data System (ADS)

    Yakunin, M. V.; Podgornykh, S. M.; Sadofyev, Yu. G.

    2009-01-01

    Double quantum wells (DQWs) were first implemented in the InAs /AlSb heterosystem, which is characterized by a large Landé g factor ∣g∣=15 of the InAs layers forming the well, much larger than the bulk g factor ∣g∣=0.4 of the GaAs in conventional GaAs /AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4eV), features with odd filling factors ν =3,5,7,… are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν =3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν =1 state. The observation of a similar effect for ν =3 in an InAs /AlSb DQW may be due to the large bulk g factor of InAs.

  11. Anomalous Hall effects in pseudo-single-crystal γ'-Fe4N thin films

    NASA Astrophysics Data System (ADS)

    Kabara, Kazuki; Tsunoda, Masakiyo; Kokado, Satoshi

    2016-05-01

    The anomalous Hall effects (AHE) were investigated at various temperatures for the pseudo-single-crystal Fe4N films, deposited on MgO substrates with changing the degree of order (S) of the nitrogen site. Both the anomalous Hall resistivity and the longitudinal resistivity simply decrease with lowering temperature for all the specimens. The AHE of the Fe4N films is presumed to arise from an intrinsic mechanism because of the relationship between the anomalous Hall resistivity and longitudinal resistivity. The anomalous Hall conductivity, σAH, exhibits a specific behavior at low temperature. In the case of the film with S = 0.93, the σAH drastically drops below 50 K, while it simply increases with lowering temperature in the range of 50-300 K. This low-temperature anomaly decays with decreasing S of the film and nearly vanishes in the films with low S. The threshold temperature and the dependence on S of the low-temperature anomaly of the σAH well correspond to those of the anisotropic magnetoresistance effects in the Fe4N films, reported in the literatures. From these results, it is suggested that the low-temperature anomaly of the σAH originates from the crystal field effect which reflects the structural transformation from a cubic to a tetragonal symmetry below 50 K and provides a modulation of the orbital angular momentum of the 3d orbitals at the Fermi level.

  12. Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

    NASA Astrophysics Data System (ADS)

    Chang, Cui-Zu; Li, Mingda

    2016-03-01

    The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

  13. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    SciTech Connect

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  14. The effects of stage configurations in a recital hall

    NASA Astrophysics Data System (ADS)

    Yang, Wonyoung; Hodgdon, Kathleen K.; Tichy, Jiry

    2003-04-01

    The room acoustical parameters, the reverberation time (RT), the early decay time (EDT), the bass ratio (BR), the clarity factor (C80), the initial time delay gap (ITDG), and the interaural cross-correlation coefficient (IACC) were measured for acoustical evaluation both in the audience seats and on the stage, using six different stage configurations in a 450-seat unoccupied hall. The stage configurations consisted of combinations of varying the position of the drapes with and without the reflector at the back of the stage. The listening test was conducted in a laboratory using high fidelity headphones to verify the subjective preference for the seats and the presence of the reflector. Analysis showed that the draped area of the stage was related to the RT, EDT, C80, BR, while the ITDG was strongly dependent on the presence of the reflector. There was not a strong impact observed in the IACC for the varying configurations. In general, the reflectors improved most of the acoustical parameters. The loudness of the musical sound was the primary parameter used to decide the subjective preference, which correlated with the C80 and the ITDG with the reflector.

  15. Geometry of the quantum Hall effect: An effective action for all dimensions

    NASA Astrophysics Data System (ADS)

    Karabali, Dimitra; Nair, V. P.

    2016-07-01

    We present a general formula for the topological part of the effective action for integer quantum Hall systems in higher dimensions, including fluctuations of the gauge field and metric around background fields of a specified topological class. The result is based on a procedure of integrating up from the Dolbeault index density which applies for the degeneracies of Landau levels, combined with some input from the standard descent procedure for anomalies. Features of the topological action in (2 +1 ), (4 +1 ), (6 +1 ) dimensions, including the contribution due to gravitational anomalies, are discussed in some detail.

  16. Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

    NASA Astrophysics Data System (ADS)

    Fuseya, Yuki

    2015-03-01

    Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

  17. Spin Hall effect in a spinor dipolar Bose-Einstein condensate

    NASA Astrophysics Data System (ADS)

    Oshima, T.; Kawaguchi, Y.

    2016-05-01

    We theoretically show that the spin Hall effect arises in a Bose-Einstein condensate (BEC) of neutral atoms interacting via the magnetic dipole-dipole interactions (MDDIs). Since the MDDI couples the total spin angular momentum and the relative orbital angular momentum of two colliding atoms, it works as a spin-orbit coupling. Thus, when we prepare a BEC in a magnetic sublevel m =0 , thermally and quantum-mechanically excited atoms in the m =1 and -1 states feel the Lorentz-like forces in the opposite directions. This is the origin for the emergence of the spin Hall effect. We define the mass-current and spin-current operators from the equations of continuity and calculate the spin Hall conductivity from the off-diagonal current-current correlation function within the Bogoliubov approximation. We find that the correction of the current operators due to the MDDI significantly contributes to the spin Hall conductivity. A possible experimental situation is also discussed.

  18. Hall effects and sub-grid-scale modeling in magnetohydrodynamic turbulence simulations

    NASA Astrophysics Data System (ADS)

    Miura, Hideaki; Araki, Keisuke; Hamba, Fujihiro

    2016-07-01

    Effects of the Hall term on short-wave components of magnetohydrodynamic turbulence and sub-grid-scale modeling of the effects are studied. Direct numerical simulations of homogeneous magnetohydrodynamic turbulence with and without the Hall term are carried out. The Hall term excites short-wave components in the magnetic field, demanding a high numerical resolution to resolve the scales smaller than the ion skin depth. A k 7 / 3-like scaling-law in the magnetic energy spectrum associated with the excitation of the short-wave components is clearly shown by the use of both an isotropic spectrum and a one-dimensional spectrum. It is also shown that the introduction of the Hall term can cause a structural transition in the vorticity field from tubes to sheets. In order to overcome a strong demand on high-resolution in space and time and to enable quicker computations, large eddy simulations with a Smagorinsky-type sub-grid-scale model are carried out. It is shown that our large eddy simulations successfully reproduce not only the energy spectrum but also tubular vortex structures, reducing the computational cost considerably.

  19. Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials

    NASA Astrophysics Data System (ADS)

    Yan, Binghai; Wu, Shu-Chun; Shan, Guangcun

    2015-03-01

    Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (~ 30 mK) hinders realistic applications. Based on honeycomb lattices comprised of Sn and Ge, which are found to be 2D topological insulators, we propose a quantum anomalous Hall platform with large energy gap of 0.34 and 0.06 eV, respectively. The ferromagnetic order forms in one sublattice of the honeycomb structure by controlling the surface functionalization rather than dilute magnetic doping, which is expected to be visualized by spin polarized STM in experiment. Strong coupling between the inherent quantum spin Hall state and ferromagnetism results in considerable exchange splitting and consequently an ferromagnetic insulator with large energy gap. The estimated mean-field Curie temperature is 243 and 509 K for Sn and Ge lattices, respectively. The large energy gap and high Curie temperature indicate the feasibility of the quantum anomalous Hall effect in the near-room-temperature and even room-temperature regions. We thank the helpful discussions with C. Felser, S. Kanugo, C.-X. Liu, Z. Wang, Y. Xu, K. Wu, and Y. Zhou.

  20. Performance Characterization of the Air Force Transformational Satellite 12 kW Hall Thruster

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Haag, Thomas W.; Smith, Timothy; Herman, Daniel; Huang, Wensheng; Shastry, Rohit; Peterson, Peter; Mathers, Alex

    2013-01-01

    The STMD GCD ISP project is tasked with developing, maturing, and testing enabling human exploration propulsion requirements and potential designs for advanced high-energy, in-space propulsion systems to support deep-space human exploration and reduce travel time between Earth's orbit and future destinations for human activity. High-power Hall propulsion systems have been identified as enabling technologies and have been the focus of the activities at NASA Glenn-In-house effort to evaluate performance and interrogate operation of NASA designed and manufactured Hall thrusters. Evaluate existing high TRL EP devices that may be suitable for implementation in SEP TDM.

  1. Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

    PubMed

    Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

    2016-04-01

    It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

  2. Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

    PubMed

    Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

    2016-04-01

    It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices. PMID:27152355

  3. Quantum Anomalous Hall effect in a Topological Insulator coupled to a Skyrmion Lattice

    NASA Astrophysics Data System (ADS)

    Bhowmick, Tonmoy; Barlas, Yafis; Yin, Gen; Lake, Roger

    A Skyrmion is a topologically protected spin texture characterized by a topological charge that has been experimentally observed in both bulk B20 compounds and thin films. In a quantum anomalous Hall phase, a material develops a topologically nontrivial electronic structure giving rise to quantized hall conductivity without any external magnetic field. We predict that a conventional bulk topological insulating material (e.g. Bi2 Se3, Bi2 Te3 Sb2 Te3) in proximity with a Skyrmion crystal, with a weak exchange coupling, will be driven into an anomalous Hall insulating phase characterized by a nonzero integer chern number in the gap. We have calculated band structure, identified the gaps, and calculated the chern number at those gaps. The calculations show that the non trivial topological properties of the Skyrmion spin texture can be imprinted on the Dirac electrons of the topological insulator. Electronic structure calculations were supported by the NSF (ECCS-1408168). Micromagnetic simulations were supported by SHINES Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award #DE-SC0012670.

  4. Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge

    PubMed Central

    Nayak, Ajaya K.; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C.; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)−1 at 2 K and ~50 (ohm·cm)−1 at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)−1, comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect–based data storage devices. PMID:27152355

  5. HYBRID AND HALL-MHD SIMULATIONS OF COLLISIONLESS RECONNECTION: EFFECTS OF PLASMA PRESSURE TENSOR

    SciTech Connect

    L. YIN; D. WINSKE; ET AL

    2001-05-01

    In this study we performed two-dimensional hybrid (particle ions, massless fluid electrons) and Hall-MHD simulations of collisionless reconnection in a thin current sheet. Both calculations include the full electron pressure tensor (instead of a localized resistivity) in the generalized Ohm's law to initiate reconnection, and in both an initial perturbation to the Harris equilibrium is applied. First, electron dynamics from the two calculations are compared, and we find overall agreement between the two calculations in both the reconnection rate and the global configuration. To address the issue of how kinetic treatment for the ions affects the reconnection dynamics, we compared the fluid-ion dynamics from the Hall-MHD calculation to the particle-ion dynamics obtained from the hybrid simulation. The comparison demonstrates that off-diagonal elements of the ion pressure tensor are important in correctly modeling the ion out-of-plane momentum transport from the X point. It is that these effects can be modeled efficiently using a particle Hall-MHD simulation method in which particle ions used in a predictor/corrector to implement the ion gyro-radius corrections. We also investigate the micro- macro-scale coupling in the magnetotail dynamics by using a new integrated approach in which particle Hall-MHD calculations are embedded inside a MHD simulation. Initial results of the simulation concerning current sheet thinning and reconnection dynamics are discussed.

  6. Measurement of the stray field emanating from magnetic force microscope tips by Hall effect microsensors

    NASA Astrophysics Data System (ADS)

    Thiaville, A.; Belliard, L.; Majer, D.; Zeldov, E.; Miltat, J.

    1997-10-01

    We describe the use of micronic Hall sensors as magnetic-field profilometers with submicron resolution. The procedure involves the deconvolution of Hall voltage maps produced by scanning the field source over the sensor, with a scanning probe microscope. The response function of an infinite Hall cross is calculated analytically in the two-dimensional case, using conformal mapping techniques. Various methods of deconvolution of the Hall voltage maps are presented and compared. The calculated response function is used for the deconvolutions, and different effective sensor sizes are tried. It is shown that the remaining main uncertainties come from the ignorance of the true response function of the sensor, ascribed to the charge depletion phenomenon that is known to occur at the sensor edges. The method is applied to thin-film magnetic force microscope tips for which a precise knowledge of the tips field at sample location proves crucial to image interpretation. Maximum fields in the range 10-100 Oe are found at a distance known to be about 100 nm from the tip contact surface, depending on the tip coating thickness and magnetization direction.

  7. Effects of an Internally-Mounted Cathode on Hall Thruster Plume Properties

    NASA Technical Reports Server (NTRS)

    Hofer, Richard R.; Johnson, Lee K.; Goebel, Dan M.; Fitzgerald, Dennis J.

    2006-01-01

    The effects of cathode position on the plume properties of an 8 kW BHT-8000 Busek Hall thruster are discussed. Experiments were conducted at the Jet Propulsion Laboratory (JPL) in a vacuum chamber suitable for the development and qualification of high-power Hall thrusters. Multi-mode Hall thruster operation was demonstrated at operating conditions ranging from 200-500 V discharge voltage, 10-40 A discharge current, and 2-8 kW discharge power. Reductions in plume divergence and increased near-field plume symmetries were found to result from the use of an internally-mounted cathode instead of the traditional externally-mounted configuration. High-current hollow cathodes developed at JPL utilizing lanthanum hexaboride (LaB6) emitters were also demonstrated. Discharge currents up to 100 A were achieved with the cathode operating alone and up to 40 A during operation with the Hall thruster. LaB6 cathodes were investigated because of their potential to reduce overall system cost and risk due to less stringent xenon purity and handling requirements.

  8. O the Generalized Hall Effect as a Modification of Ideal Magnetohydrodynamics

    NASA Astrophysics Data System (ADS)

    Goodman, Michael Lee

    The generalized Hall effect (GHE) in the generalized Hall model (GHM) is studied as a correction to ideal magnetohydrodynamics (MHD) in the context of how it affects the linear stability of cylindrically symmetric equilibria and how it changes helically symmetric equilibria. The GHM differs from what is usually called the Hall model by including the electron pressure in the electron momentum equation. This gives the GHM some aspects of a two fluid model whereas the Hall model is a one fluid model. In both cases of cyclindrical and helical symmetry the presence of the electron pressure gradient as part of the GHE gives rise to an electric field tangent to the boundary of the plasma. This introduces an additional boundary condition in the case of a perfectly conducting plasma boundary. In the case of helical symmetry the equilibrium equations are a generalization of the Grad-Schafranov equation to equilibria with flow and GHE. The classification of these partial differential equations is independent of the component of the ion fluid velocity parallel to the helical direction which may allow for transonic or supersonic flows which are governed by elliptic equations. In the case of cylindrical symmetry a class of Alfven wave solutions that do not exist in ideal MHD is obtained and the accumulation point, with respect to large radial wavenumber, of the slow magnetoacoustic wave is shown to be changed from a finite nonzero value in ideal MHD to infinity by the GHE.

  9. Interplay of flux guiding and Hall effect in Nb films with nanogrooves

    NASA Astrophysics Data System (ADS)

    Dobrovolskiy, O. V.; Hanefeld, M.; Zörb, M.; Huth, M.; Shklovskij, V. A.

    2016-06-01

    The interplay between vortex guiding and the Hall effect in superconducting Nb films with periodically arranged nanogrooves is studied via four-probe measurements in standard and Hall configurations and accompanying theoretical modeling. The nanogrooves are milled by focused ion beam and induce a symmetric pinning potential of the washboard type. The resistivity tensor of the films is determined in the limit of small current densities at temperatures close to the critical temperature for the fundamental matching configuration of the vortex lattice with respect to the pinning nanolandscape. The angle between the current direction with respect to the grooves is set at seven fixed values between 0° and 90°. A sign change is observed in the temperature dependence of the Hall resistivity {ρ }\\perp - of as-grown films in a narrow temperature range near T c . By contrast, for all nanopatterned films {ρ }\\perp - is non-zero in a broader temperature range below T c , allowing us to discriminate between two contributions in {ρ }\\perp -, namely one contribution originating from the guided vortex motion and the other one caused by the Hall anomaly just as in as-grown Nb films. All four measured resistivity components are successfully fitted to analytical expressions derived within the framework of a stochastic model of competing isotropic and anisotropic pinning. This provides evidence of the model validity for the description of the resistive response of superconductor thin films with washboard pinning nanolandscapes.

  10. Scrutinizing Hall Effect in Mn1 -xFex Si : Fermi Surface Evolution and Hidden Quantum Criticality

    NASA Astrophysics Data System (ADS)

    Glushkov, V. V.; Lobanova, I. I.; Ivanov, V. Yu.; Voronov, V. V.; Dyadkin, V. A.; Chubova, N. M.; Grigoriev, S. V.; Demishev, S. V.

    2015-12-01

    Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic phase of Mn1 -xFex Si reveals an ordinary Hall effect sign inversion associated with the hidden quantum critical (QC) point x*˜0.11 . The effective hole doping at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions, and QC phenomena in Mn1 -xFex Si . The change of electron and hole concentrations is considered as a "driving force" for tuning the QC regime in Mn1 -xFex Si via modifying the Ruderman-Kittel-Kasuya-Yosida exchange interaction within the Heisenberg model of magnetism.

  11. All-electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Jungfleisch, Matthias B.; Freimuth, Frank; Jiang, Wanjun; Sklenar, Joseph; Pearson, John E.; Ketterson, John B.; Mokrousov, Yuriy; Hoffmann, Axel

    2015-10-01

    We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We find a growth-orientation dependence of the spin torques by studying epitaxial samples, which may be correlated to the anisotropy of the spin Hall effect. The observed anisotropy is consistent with first-principles calculations on the intrinsic spin Hall effect. Our work demonstrates large tunable spin-orbit effects in magnetically ordered materials.

  12. The Hall-Petch effect as a manifestation of the general size effect

    NASA Astrophysics Data System (ADS)

    Li, Y.; Bushby, A. J.; Dunstan, D. J.

    2016-06-01

    The experimental evidence for the Hall-Petch dependence of strength on the inverse square-root of grain size is reviewed critically. Both the classic data and more recent results are considered. While the data are traditionally fitted to the inverse square-root dependence, they also fit well to many other functions, both power law and non-power law. There have been difficulties, recognized for half-a-century, in the inverse square-root expression. It is now explained as an artefact of faulty data analysis. A Bayesian meta-analysis shows that the data strongly support the simple inverse or lnd/d expressions. Since these expressions derive from underlying theory, they are also more readily explicable. It is concluded that the Hall-Petch effect is not to be explained by the variety of theories found in the literature, but is a manifestation of, or to be underlain by the general size effect observed throughout micromechanics, owing to the inverse relationship between the stress required and the space available for dislocation sources to operate.

  13. Influence of complex disorder on skew-scattering Hall effects in L 10 -ordered FePt alloy

    NASA Astrophysics Data System (ADS)

    Zimmermann, Bernd; Long, Nguyen H.; Mavropoulos, Phivos; Blügel, Stefan; Mokrousov, Yuriy

    2016-08-01

    We show by first-principles calculations that the skew-scattering anomalous Hall and spin Hall angles of L 10 -ordered FePt drastically depend on different types of disorder. A different sign of the anomalous Hall angle is obtained when slightly deviating from the stoichiometric ratio towards the Fe-rich side as compared to the Pt-rich side. For stoichiometric samples, short-range ordering of defects has a profound effect on the Hall angles and can change them by a factor of 2 as compared to the case of uncorrelated disorder. This might explain the vast range of anomalous Hall angles measured in experiments, which undergo different preparation procedures and thus might differ in their crystallographic quality.

  14. Bismuth nano-Hall Sensor for Scanning Hall Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Sonusen, Selda; Dede, Munir; Oral, Ahmet

    2013-03-01

    Scanning hall probe microscopy (SHPM) is a non invasive and quantitative magnetic imaging technique, which provides high spatial (50nm) and magnetic resolution to image magnetic and superconducting materials. SHPM can also work under high magnetic field and in a wide temperature (range 30mK -300K). Since Bismuth is a semimetal with a concentration five orders of magnitude lower than metals and negligible surface charge depletion effect, it is an alternative material for Hall probes for SHPM. In this work, we fabricated Bi Hall sensors with different sizes ranging from 10nm to 50nm- by electron beam lithography. The sensors are calibrated -under high magnetic fields -and the minimum detectable magnetic field was measured in a broad temperature range, 4-300K. In addition, 50nm Bi Hall sensors are -used for imaging magnetic domains in Iron Garnet thin film crystal. A detailed electrical characterization and performance of the 25nm and 50nm Hall Sensors will also be presented.

  15. Observation of inverse spin Hall effect in ferromagnetic FePt alloys using spin Seebeck effect

    SciTech Connect

    Seki, Takeshi Takanashi, Koki; Uchida, Ken-ichi; Kikkawa, Takashi; Qiu, Zhiyong; Saitoh, Eiji

    2015-08-31

    We experimentally observed the inverse spin Hall effect (ISHE) of ferromagnetic FePt alloys. Spin Seebeck effect due to the temperature gradient generated the spin current (J{sub s}) in the FePt|Y{sub 3}Fe{sub 5}O{sub 12} (YIG) structure, and J{sub s} was injected from YIG to FePt and converted to the charge current through ISHE of FePt. The significant difference in magnetization switching fields for FePt and YIG led to the clear separation of the voltage of ISHE from that of anomalous Nernst effect in FePt. We also investigated the effect of ordering of FePt crystal structure on the magnitude of ISHE voltage in FePt.

  16. A Novel Method of Zero Offset Reduction in Hall Effect Sensors with Applications to Magnetic Field Measurement

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Liu, Ji-Gou; Zhang, Quan

    2015-02-01

    The paper presents a novel method to reduce the zero offset in Hall-Effect based magnetic measurement with single power supply. This method consists of a coarse zero compensation and a fine zero adjustment afterwards. By using the proposed method the zero output offset of Hall Effect sensors under using single power supply can be controlled within 0.2%. This method can be applied to all Hall Effect sensors with analog output and other similar sensors, which are powered with a single voltage or current source.

  17. Reprint of : Effect of incoherent scattering on three-terminal quantum Hall thermoelectrics

    NASA Astrophysics Data System (ADS)

    Sánchez, Rafael; Sothmann, Björn; Jordan, Andrew N.

    2016-08-01

    A three-terminal conductor presents peculiar thermoelectric and thermal properties in the quantum Hall regime: it can behave as a symmetric rectifier and as an ideal thermal diode. These properties rely on the coherent propagation along chiral edge channels. We investigate the effect of breaking the coherent propagation by the introduction of a probe terminal. It is shown that chiral effects not only survive the presence of incoherence but they can even improve the thermoelectric performance in the totally incoherent regime.

  18. Gravitational instability of a rotating partially-ionized plasma carrying a uniform magnetic field with Hall effect

    NASA Technical Reports Server (NTRS)

    Kumar, Vinod; Kumar, Nagendra; Srivastava, Krishna M.; Mittal, R. C.

    1993-01-01

    The problem of gravitational instability of an infinite homogeneous self-gravitating medium carrying a uniform magnetic field in the presence of Hall effect has been investigated to include the effect due to rotation. The dispersion relation has been obtained. It has been found that the Jeans's criterion for the instability remains unaffected even when the effect due to rotation is considered in the presence of Hall effect carrying a uniform magnetic.

  19. Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

    SciTech Connect

    Zhang, Fengkui Kong, Lingyi; Li, Chenliang; Yang, Haiwei; Li, Wei

    2014-11-15

    Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current. The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.

  20. Geometrical Optics of Beams with Vortices: Berry Phase and Orbital Angular Momentum Hall Effect

    SciTech Connect

    Bliokh, Konstantin Yu.

    2006-07-28

    We consider propagation of a paraxial beam carrying the spin angular momentum (polarization) and intrinsic orbital angular momentum (IOAM) in a smoothly inhomogeneous isotropic medium. It is shown that the presence of IOAM can dramatically enhance and rearrange the topological phenomena that previously were considered solely in connection to the polarization of transverse waves. In particular, the appearance of a new type of Berry phase that describes the parallel transport of the beam structure along a curved ray is predicted. We derive the ray equations demonstrating the splitting of beams with different values of IOAM. This is the orbital angular momentum Hall effect, which resembles the Magnus effect for optical vortices. Unlike the spin Hall effect of photons, it can be much larger in magnitude and is inherent to waves of any nature. Experimental means to detect the phenomena are discussed.

  1. Quasiparticle-mediated spin Hall effect in a superconductor.

    PubMed

    Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

    2015-07-01

    In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

  2. Coriolis effect in optics: unified geometric phase and spin-Hall effect.

    PubMed

    Bliokh, Konstantin Y; Gorodetski, Yuri; Kleiner, Vladimir; Hasman, Erez

    2008-07-18

    We examine the spin-orbit coupling effects that appear when a wave carrying intrinsic angular momentum interacts with a medium. The Berry phase is shown to be a manifestation of the Coriolis effect in a noninertial reference frame attached to the wave. In the most general case, when both the direction of propagation and the state of the wave are varied, the phase is given by a simple expression that unifies the spin redirection Berry phase and the Pancharatnam-Berry phase. The theory is supported by the experiment demonstrating the spin-orbit coupling of electromagnetic waves via a surface plasmon nanostructure. The measurements verify the unified geometric phase, demonstrated by the observed polarization-dependent shift (spin-Hall effect) of the waves.

  3. Calibration of a Hall effect displacement measurement system for complex motion analysis using a neural network.

    PubMed

    Northey, G W; Oliver, M L; Rittenhouse, D M

    2006-01-01

    Biomechanics studies often require the analysis of position and orientation. Although a variety of transducer and camera systems can be utilized, a common inexpensive alternative is the Hall effect sensor. Hall effect sensors have been used extensively for one-dimensional position analysis but their non-linear behavior and cross-talk effects make them difficult to calibrate for effective and accurate two- and three-dimensional position and orientation analysis. The aim of this study was to develop and calibrate a displacement measurement system for a hydraulic-actuation joystick used for repetitive motion analysis of heavy equipment operators. The system utilizes an array of four Hall effect sensors that are all active during any joystick movement. This built-in redundancy allows the calibration to utilize fully connected feed forward neural networks in conjunction with a Microscribe 3D digitizer. A fully connected feed forward neural network with one hidden layer containing five neurons was developed. Results indicate that the ability of the neural network to accurately predict the x, y and z coordinates of the joystick handle was good with r(2) values of 0.98 and higher. The calibration technique was found to be equally as accurate when used on data collected 5 days after the initial calibration, indicating the system is robust and stable enough to not require calibration every time the joystick is used. This calibration system allowed an infinite number of joystick orientations and positions to be found within the range of joystick motion.

  4. Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy

    NASA Astrophysics Data System (ADS)

    Matsuzaka, S.; Ohno, Y.; Ohno, H.

    2009-12-01

    We studied electron density (n) dependence of the extrinsic spin Hall effect in n -doped GaAs with n raging from 1.8×1016 to 3.3×1017cm-3 . By scanning Kerr microscopy measurements, we observed spin accumulation near the channel edges in all the samples due to the extrinsic spin Hall effect. The spin Hall conductivity σSH is obtained for each sample by comparing the Kerr rotation induced by optically injected spins. σSH is found to increase with n , and it is shown that a theoretical model reported earlier agrees well with the experimental n dependence of σSH .

  5. Performance comparison of Hall Effect sensor and EMATs in measurement of specimen with various hole depths

    NASA Astrophysics Data System (ADS)

    Sriratana, Witsarut; Murayama, Riichi

    2014-06-01

    This study presents the experimental results completed to compare both performance of a special ultrasonic sensor and a Hall Effect sensor under the same measurement condition in order to assess the effectiveness, the proper installation, the convenience of use, and the costs of both methods. A special ultrasonic sensor is generally called Electromagnetic Acoustic Transducer (EMAT) which consists of magnet and sensor coil. It was tuned that ultrasonic wave with 1 MHz can be injected and detected. Sensor coils were separated to the transmitter and the receiver and placed at two surfaces of the specimen (top and bottom) to set the Lorentz force in parallel direction of the specimen surfaces [1]. This type of EMAT can generate the transverse wave (shear ware) for analyzing the wavelength from measurement. In application, the output voltage from Hall Effect sensor was then compared to the reference voltage in comparator circuit and then amplified the difference to gain 20 times and converted to frequency domain for better resolution at the specific set point of 8 kHz. From experiment, use of Hall Effect sensor exhibited high efficiency over that of EMAT method due to less complexity of the system, lower cost, as well as ease and convenience of installation. Moreover, application of EMAT method with the small size of specimen would lead the error and standard deviation by up to 4.51% and 0.279, respectively compared to that of Hall Effect sensor that can exhibit less error and standard deviation by about 0.24% and 0.013, respectively.

  6. Landau level quantization for massless Dirac fermions in the spherical geometry: Graphene fractional quantum Hall effect on the Haldane sphere

    NASA Astrophysics Data System (ADS)

    Arciniaga, Michael; Peterson, Michael R.

    2016-07-01

    We derive the single-particle eigenenergies and eigenfunctions for massless Dirac fermions confined to the surface of a sphere in the presence of a magnetic monopole, i.e., we solve the Landau level problem for electrons in graphene on the Haldane sphere. With the single-particle eigenfunctions and eigenenergies we calculate the Haldane pseudopotentials for the Coulomb interaction in the second Landau level and calculate the effective pseudopotentials characterizing an effective Landau level mixing Hamiltonian entirely in the spherical geometry to be used in theoretical studies of the fractional quantum Hall effect in graphene. Our treatment is analogous to the formalism in the planar geometry and reduces to the planar results in the thermodynamic limit.

  7. Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field.

    PubMed

    Bestwick, A J; Fox, E J; Kou, Xufeng; Pan, Lei; Wang, Kang L; Goldhaber-Gordon, D

    2015-05-01

    We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10 000 and a longitudinal resistivity under 1  Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration. PMID:26001016

  8. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Reese, Bradley

    2015-01-01

    Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

  9. Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

    SciTech Connect

    Ling, Xiaohui; Yi, Xunong; Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun; Luo, Hailu

    2014-10-13

    We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

  10. High pressure Moissanite-anvil cells for the low temperature Hall effect measurements of oxide superconductors

    NASA Astrophysics Data System (ADS)

    Yomo, Shusuke; Tozer, Stanley

    2013-03-01

    The Hall effect was successfully measured for a single crystal of high temperature superconductor in a Moissanite-anvil clamp cell up to 5 GPa, with proper arrangement of lead wires and a sample. Zylon gasket, good in electrical insulation, worked well up to 5 GPa. The 30-40 % increase of the clamped pressure was observed during cooling to below 60 K. The appreciable pressure effect of the a-b plane Hall coefficient was observed and negative for La2 - x Srx CuO4 with x = 0.090. The result is discussed with those for sintered samples and those studied with a different pressurizing method. Thanks are due to Visiting Scientist Program, NHMFL, and NNSA grant DE-FG52-03NA00066.

  11. Bilayer graphene under pressure: Electron-hole symmetry breaking, valley Hall effect, and Landau levels

    NASA Astrophysics Data System (ADS)

    Munoz, F.; Collado, H. P. Ojeda; Usaj, Gonzalo; Sofo, Jorge O.; Balseiro, C. A.

    2016-06-01

    The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four Dirac cones, one at K and three along the T symmetry lines. As pressure is increased, these cones separate in reciprocal space and in energy, breaking the electron-hole symmetry. Due to their energy separation, their opposite Berry curvature can be observed in valley Hall effect experiments and in the structure of the Landau levels. Based on the electronic structure obtained by density functional theory, we develop a low energy Hamiltonian that describes the effects of pressure on measurable quantities such as the Hall conductivity and the Landau levels of the system.

  12. Enhanced spin Hall effect by electron correlations in CuBi alloys

    SciTech Connect

    Gu, Bo Xu, Zhuo; Mori, Michiyasu; Maekawa, Sadamichi; Ziman, Timothy

    2015-05-07

    A recent experiment in CuBi alloys obtained a large spin Hall angle (SHA) of −0.24 (Niimi et al., Phys. Rev. Lett. 109, 156602 (2012)). We find that the SHA can be dramatically enhanced by Bi impurities close to the Cu surface. The mechanisms of this enhancement are two-fold. One is that the localized impurity state on surface has a decreased hybridization and combined with Coulomb correlation effect. The other comes from the low-dimensional state of conduction electrons on surface, which results in a further enhancement of skew scattering by impurities. Furthermore, we note that a discrepancy in sign of SHA between the experiment and previous theories is simply caused by different definitions of SHA. This re-establishes skew scattering as the essential mechanism underlying the spin Hall effect in CuBi alloys.

  13. Origin of the planar Hall effect in nanocrystalline Co60Fe20B20.

    PubMed

    Seemann, K M; Freimuth, F; Zhang, H; Blügel, S; Mokrousov, Y; Bürgler, D E; Schneider, C M

    2011-08-19

    An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co(60)Fe(20)B(20) thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co(60)Fe(20)B(20) obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at. % boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.

  14. Effect of electron temperature anisotropy on near-wall conductivity in Hall thrusters

    SciTech Connect

    Zhang, Fengkui E-mail: yudaren@hit.edu.cn; Kong, Lingyi; Zhang, Xueyi; Li, Wei; Yu, Daren E-mail: yudaren@hit.edu.cn

    2014-06-15

    The electron velocity distribution in Hall thrusters is anisotropic, which not only makes the sheath oscillate in time, but also causes the sheath to oscillate in space under the condition of low electron temperatures. The spatial oscillation sheath has a significant effect on near-wall transport current. In this Letter, the method of particle-in-cell (2D + 3 V) was adopted to simulate the effect of anisotropic electron temperatures on near-wall conductivity in a Hall thruster. Results show that the electron-wall collision frequency is within the same order in magnitude for both anisotropic and isotropic electron temperatures. The near-wall transport current produced by collisions between the electrons and the walls is much smaller than experimental measurements. However, under the condition of anisotropic electron temperatures, the non-collision transport current produced by slow electrons which reflected by the spatial oscillation sheath is much larger and closes to measurements.

  15. Magnon Hall effect in AB-stacked bilayer honeycomb quantum magnets

    NASA Astrophysics Data System (ADS)

    Owerre, S. A.

    2016-09-01

    Motivated by the fact that many bilayer quantum magnets occur in nature, we generalize the study of thermal Hall transports of spin excitations to bilayer magnetic systems. It is shown that bilayer magnetic systems can be coupled either ferromagnetically or antiferromagnetically. We study both scenarios on the honeycomb lattice and show that the system realizes topologically nontrivial magnon bands induced by alternating next-nearest-neighbor Dzyaloshinsky-Moriya interaction. As a result, the bilayer system realizes both magnon Hall effect and magnon spin Nernst effect. We show that antiferromagnetically coupled layers differ from ferromagnetically coupled layers by a sign change in the conductivities as the magnetic field is reversed. Furthermore, Chern number protected magnon edge states are observed and propagate in the same direction on the top and bottom layers in ferromagnetically coupled layers, whereas the magnon edge states propagate in opposite directions for antiferromagnetically coupled layers.

  16. Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

    SciTech Connect

    Shan, Wen-Yu; Lu, Hai-Zhou; Xiao, Di

    2013-01-01

    We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar andmagnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

  17. Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Shan, Wen-Yu; Lu, Hai-Zhou; Xiao, Di

    2013-09-01

    We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

  18. Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Shan, Wenyu; Lu, Haizhou; Xiao, Di

    2014-03-01

    We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime. the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (W.S.) and by AFOSR Grant No. FA9550-12-1-0479 (D.X.).

  19. Realizing Tao-Thouless-like state in fractional quantum spin Hall effect.

    PubMed

    Liu, Chen-Rong; Guo, Yao-Wu; Li, Zhuo-Jun; Li, Wei; Chen, Yan

    2016-01-01

    The quest for exotic quantum states of matter has become one of the most challenging tasks in modern condensed matter communications. Interplay between topology and strong electron-electron interactions leads to lots of fascinating effects since the discovery of the fractional quantum Hall effect. Here, we theoretically study the Rashba-type spin-orbit coupling effect on a fractional quantum spin Hall system by means of finite size exact diagonalization. Numerical evidences from the ground degeneracies, states evolutions, entanglement spectra, and static structure factor calculations demonstrate that non-trivial fractional topological Tao-Thouless-like quantum state can be realized in the fractional quantum spin Hall effect in a thin torus geometric structure by tuning the strength of spin-orbit coupling. Furthermore, the experimental realization of the Tao-Thouless-like state as well as its evolution in optical lattices are also proposed. The importance of this prediction provides significant insight into the realization of exotic topological quantum states in optical lattice, and also opens a route for exploring the exotic quantum states in condensed matters in future. PMID:27649678

  20. Modified weak measurements for the detection of the photonic spin Hall effect

    NASA Astrophysics Data System (ADS)

    Chen, Shizhen; Zhou, Xinxing; Mi, Chengquan; Luo, Hailu; Wen, Shuangchun

    2015-06-01

    Weak measurement is an important technique for the detection of the tiny spin-dependent splitting in photonic spin Hall effect. The weak measurement is only valid when the probe wave function remains almost undisturbed during the procedure of measurements. However, it does not always satisfy such condition in some practical situations, such as in the strong-coupling regime or when the preselected and postselected states are nearly orthogonal. In this paper, we develop a modified weak measurement for the detection of the photonic spin Hall effect when the probe wave function is distorted. We find that the measuring procedure with preselected and postselected ensembles is still effective. This scheme is important for us to detect the photonic spin Hall effect in the case where neither weak nor strong measurements can detect the spin-dependent splitting. The modified theory is valid not only in the weak-coupling regime but also in the strong-coupling regime, and especially in the intermediate regime. The theoretical models of conventional weak measurements and modified weak measurements are established and compared. We show that the experimental results coincide well with the predictions of the modified theory.