Sample records for hall effect devices

  1. Piezo Voltage Controlled Planar Hall Effect Devices

    PubMed Central

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

  2. Piezo Voltage Controlled Planar Hall Effect Devices.

    PubMed

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  3. Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design.

    PubMed

    Hultin, Olof; Otnes, Gaute; Samuelson, Lars; Storm, Kristian

    2017-02-08

    Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires.

  4. Pseudo-Hall Effect in Graphite on Paper Based Four Terminal Devices for Stress Sensing Applications

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Sarwar, Tuba; Dinh, Toan; Foisal, A. R. M.; Phan, Hoang-Phuong; Viet Dao, Dzung

    2017-04-01

    A cost effective and easy to fabricate stress sensor based on pseudo-Hall effect in Graphite on Paper (GOP) has been presented in this article. The four terminal devices were developed by pencil drawing with hand on to the paper substrate. The stress was applied to the paper containing four terminal devices with the input current applied at two terminals and the offset voltage observed at other two terminals called pseudo-Hall effect. The GOP stress sensor showed significant response to the applied stress which was smooth and linear. These results showed that the pseudo-Hall effect in GOP based four terminal devices can be used for cost effective, flexible and easy to make stress, strain or force sensors.

  5. Hall devices improve electric motor efficiency

    NASA Technical Reports Server (NTRS)

    Haeussermann, W.

    1979-01-01

    Efficiency of electric motors and generators is reduced by radial magnetic forces created by symmetric fields within device. Forces are sensed and counteracted by Hall devices on excitation or control windings. Hall generators directly measure and provide compensating control of anu asymmetry, eliminating additional measurements needed for calibration feedback control loop.

  6. Mini array of quantum Hall devices based on epitaxial graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed thatmore » the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.« less

  7. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

    NASA Astrophysics Data System (ADS)

    Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.; Schopfer, F.

    2015-11-01

    The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10-9 over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10-11, supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.

  8. Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

    PubMed Central

    Jeffery, A.; Elmquist, R. E.; Cage, M. E.

    1995-01-01

    Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance. PMID:29151768

  9. Autonomous Method and System for Minimizing the Magnitude of Plasma Discharge Current Oscillations in a Hall Effect Plasma Device

    NASA Technical Reports Server (NTRS)

    Hruby, Vladimir (Inventor); Demmons, Nathaniel (Inventor); Ehrbar, Eric (Inventor); Pote, Bruce (Inventor); Rosenblad, Nathan (Inventor)

    2014-01-01

    An autonomous method for minimizing the magnitude of plasma discharge current oscillations in a Hall effect plasma device includes iteratively measuring plasma discharge current oscillations of the plasma device and iteratively adjusting the magnet current delivered to the plasma device in response to measured plasma discharge current oscillations to reduce the magnitude of the plasma discharge current oscillations.

  10. A Small Modular Laboratory Hall Effect Thruster

    NASA Astrophysics Data System (ADS)

    Lee, Ty Davis

    Electric propulsion technologies promise to revolutionize access to space, opening the door for mission concepts unfeasible by traditional propulsion methods alone. The Hall effect thruster is a relatively high thrust, moderate specific impulse electric propulsion device that belongs to the class of electrostatic thrusters. Hall effect thrusters benefit from an extensive flight history, and offer significant performance and cost advantages when compared to other forms of electric propulsion. Ongoing research on these devices includes the investigation of mechanisms that tend to decrease overall thruster efficiency, as well as the development of new techniques to extend operational lifetimes. This thesis is primarily concerned with the design and construction of a Small Modular Laboratory Hall Effect Thruster (SMLHET), and its operation on argon propellant gas. Particular attention was addressed at low-cost, modular design principles, that would facilitate simple replacement and modification of key thruster parts such as the magnetic circuit and discharge channel. This capability is intended to facilitate future studies of device physics such as anomalous electron transport and magnetic shielding of the channel walls, that have an impact on thruster performance and life. Preliminary results demonstrate SMLHET running on argon in a manner characteristic of Hall effect thrusters, additionally a power balance method was utilized to estimate thruster performance. It is expected that future thruster studies utilizing heavier though more expensive gases like xenon or krypton, will observe increased efficiency and stability.

  11. A Planar Hall Thruster for Investigating Electron Mobility in ExB Devices (Preprint)

    DTIC Science & Technology

    2007-08-24

    Hall thruster that emits and collects the Hall current across a planar discharge channel is described. The planar Hall thruster (PHT) is being investigated for use as a test bed to study electron mobility in ExB devices. The planar geometry attempts to de-couple the complex electron motion found in annular thrusters by using simplified geometry. During this initial test, the PHT was operated at discharge voltages between 50-150 V to verify operability and stability of the device. Hall current was emitted by hollow cathode electron sources and

  12. Extrinsic spin Hall effect in graphene

    NASA Astrophysics Data System (ADS)

    Rappoport, Tatiana

    The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

  13. Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

    NASA Astrophysics Data System (ADS)

    Yin, Gen; Zang, Jiadong; Lake, Roger

    2014-03-01

    Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

  14. Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

    PubMed Central

    Maryenko, D.; Mishchenko, A. S.; Bahramy, M. S.; Ernst, A.; Falson, J.; Kozuka, Y.; Tsukazaki, A.; Nagaosa, N.; Kawasaki, M.

    2017-01-01

    Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system. PMID:28300133

  15. Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

    PubMed

    Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

    2016-01-13

    We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

  16. Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

    NASA Astrophysics Data System (ADS)

    Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

    2017-12-01

    Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

  17. Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Dao, Dzung Viet; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Phan, Hoang-Phuong; Hold, Leonie; Dimitrijev, Sima

    2017-04-01

    This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (-29 ± 1.3) × 10-11 Pa-1, P12 = (11.06 ± 0.5)× 10-11 Pa-1, and P44 = (-3.4 ± 0.7) × 10-11 Pa-1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.

  18. Valley Hall effect and Nernst effect in strain engineered graphene

    NASA Astrophysics Data System (ADS)

    Niu, Zhi Ping; Yao, Jian-ming

    2018-04-01

    We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

  19. Spin Hall effects

    NASA Astrophysics Data System (ADS)

    Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

    2015-10-01

    Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

  20. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

    NASA Astrophysics Data System (ADS)

    Schopfer, F.; Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.

    Large-area and high-quality graphene devices synthesized by CVD on SiC are used to develop reliable electrical resistance standards, based on the quantum Hall effect (QHE), with state-of-the-art accuracy of 1x10-9 and under an extended range of experimental conditions of magnetic field (down to 3.5 T), temperature (up to 10 K) or current (up to 0.5 mA). These conditions are much relaxed as compared to what is required by GaAs/AlGaAs standards and will enable to broaden the use of the primary quantum electrical standards to the benefit of Science and Industry for electrical measurements. Furthermore, by comparison of these graphene devices with GaAs/AlGaAs standards, we demonstrate the universality of the QHE within an ultimate uncertainty of 8.2x10-11. This suggests the exact relation of the quantized Hall resistance with the Planck constant and the electron charge, which is crucial for the new SI to be based on fixing such fundamental constants. These results show that graphene realizes its promises and demonstrates its superiority over other materials for a demanding application. Nature Nanotech. 10, 965-971, 2015, Nature Commun. 6, 6806, 2015

  1. Nonreciprocal quantum Hall devices with driven edge magnetoplasmons in two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Bosco, S.; DiVincenzo, D. P.

    2017-05-01

    We develop a theory that describes the response of nonreciprocal devices employing two-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model can incorporate several cases that were often treated on different grounds in literature. In particular, we analyze plasmonic excitations supported by a smooth and sharp confining potential in a two-dimensional electron gas, and in monolayer graphene, and we point out the similarities and differences in these materials. We also account for a general time-dependent external drive applied to the system. Finally, we describe the behavior of a nonreciprocal quantum Hall device: the response contains additional resonant features, which were not foreseen from previous models.

  2. Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

    NASA Astrophysics Data System (ADS)

    Chang, Cui-Zu; Li, Mingda

    2016-03-01

    The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

  3. Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

    NASA Astrophysics Data System (ADS)

    Tong, Wen-Yi; Duan, Chun-Gang

    2017-08-01

    In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

  4. Micro-Hall devices for magnetic, electric and photo-detection

    NASA Astrophysics Data System (ADS)

    Gilbertson, A.; Sadeghi, H.; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

    Multifunctional mesoscopic sensors capable of detecting local magnetic (B) , electric (E) , and optical fields can greatly facilitate image capture in nano-arrays that address a multitude of disciplines. The use of micro-Hall devices as B-field sensors and, more recently as E-field sensors is well established. Here we report the real-space voltage response of InSb/AlInSb micro-Hall devices to not only local E-, and B-fields but also to photo-excitation using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local E-fields. Our experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. At room temperature, samples exhibit a magnetic sensitivity of >500 nT/ √Hz, an optical noise equivalent power of >20 pW/ √Hz (λ = 635 nm) comparable to commercial photoconductive detectors, and charge sensitivity of >0.04 e/ √Hz comparable to that of single electron transistors. Work done while on sabbatical from Washington University. Co-founder of PixelEXX, a start-up whose focus is imaging nano-arrays.

  5. Spin-Hall effect in the scattering of structured light from plasmonic nanowire.

    PubMed

    Sharma, Deepak K; Kumar, Vijay; Vasista, Adarsh B; Chaubey, Shailendra K; Kumar, G V Pavan

    2018-06-01

    Spin-orbit interactions are subwavelength phenomena that can potentially lead to numerous device-related applications in nanophotonics. Here, we report the spin-Hall effect in the forward scattering of Hermite-Gaussian (HG) and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the spin-Hall effect for a HG beam compared to a Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition, the nodal line of the HG beam acts as the marker for the spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the spin flow component of the Poynting vector associated with the circular polarization is responsible for the spin-Hall effect and its enhancement.

  6. Spin-Hall effect in the scattering of structured light from plasmonic nanowire

    NASA Astrophysics Data System (ADS)

    Sharma, Deepak K.; Kumar, Vijay; Vasista, Adarsh B.; Chaubey, Shailendra K.; Kumar, G. V. Pavan

    2018-06-01

    Spin-orbit interactions are subwavelength phenomena which can potentially lead to numerous device related applications in nanophotonics. Here, we report Spin-Hall effect in the forward scattering of Hermite-Gaussian and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the Spin-Hall effect for Hermite-Gaussian beam as compared to Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition to it, nodal line of HG beam acts as the marker for the Spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the Spin flow component of Poynting vector associated with the circular polarization is responsible for the Spin-Hall effect and its enhancement.

  7. Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

    NASA Astrophysics Data System (ADS)

    Ndiaye, Papa Birame; Akosa, Collins; Manchon, Aurelien; Spintronics Theory Group Team

    We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic approximation still holds for large skyrmions as well as for few atomic size-nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that topological Hall effect is highly sensitive to momentum scattering. This work was supported by the King Abdullah University of Science and Technology (KAUST) through the Award No OSR-CRG URF/1/1693-01 from the Office of Sponsored Research (OSR).

  8. Faster Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

    1993-01-01

    Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

  9. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gilbertson, A. M.; Cohen, L. F.; Sadeghi, Hatef

    2015-12-07

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors;more » and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.« less

  10. Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

    PubMed

    Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

    2016-04-01

    It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

  11. Tunneling Anomalous and Spin Hall Effects.

    PubMed

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  12. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  13. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  14. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  15. Observation of a superfluid Hall effect

    PubMed Central

    Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

    2012-01-01

    Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

  16. Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes.

    PubMed

    Lee, Sangyeop; Bac, Seul-Ki; Choi, Seonghoon; Lee, Hakjoon; Yoo, Taehee; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, M; Furdyna, Jacek K

    2017-04-25

    We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

  17. Magnet/Hall-Effect Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

  18. Reduced Spin Hall Effects from Magnetic Proximity.

    DOE PAGES

    Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

    2015-03-26

    We investigate temperature-dependent spin pumping and inverse spin Hall effects in thin Pt and Pd in contact with Permalloy. Our experiments show a decrease of the spin Hall effect with decreasing temperature, which is attributed to a temperature-dependent proximity effect. The spin Hall angle decreases from 0.086 at room temperature to 0.042 at 10 K for Pt and is nearly negligible at 10 K for Pd. By first-principle calculations, we show that the spin Hall conductivity indeed reduces by increasing the proximity-induced spin magnetic moments for both Pt and Pd. This work highlights the important role of proximity-induced magnetic orderingmore » to spin Hall phenomena in Pt and Pd.« less

  19. Redundant speed control for brushless Hall effect motor

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1973-01-01

    A speed control system for a brushless Hall effect device equipped direct current (D.C.) motor is described. Separate windings of the motor are powered by separate speed responsive power sources. A change in speed, upward or downward, because of the failure of a component of one of the power sources results in a corrective signal being generated in the other power source to supply an appropriate power level and polarity to one winding to cause the motor to be corrected in speed.

  20. 1000 Hours of Testing Completed on 10-kW Hall Thruster

    NASA Technical Reports Server (NTRS)

    Mason, Lee S.

    2001-01-01

    Between the months of April and August 2000, a 10-kW Hall effect thruster, designated T- 220, was subjected to a 1000-hr life test evaluation. Hall effect thrusters are propulsion devices that electrostatically accelerate xenon ions to produce thrust. Hall effect propulsion has been in development for many years, and low-power devices (1.35 kW) have been used in space for satellite orbit maintenance. The T-220, shown in the photo, produces sufficient thrust to enable efficient orbital transfers, saving hundreds of kilograms in propellant over conventional chemical propulsion systems. This test is the longest operation ever achieved on a high-power Hall thruster (greater than 4.5 kW) and is a key milestone leading to the use of this technology for future NASA, commercial, and military missions.

  1. Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

    2015-02-14

    We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

  2. Spin Hall Effects in Metallic Antiferromagnets

    DOE PAGES

    Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

    2014-11-04

    In this paper, we investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of these materials to be short, on the order of 1 nm. The estimated spin Hall angles of the four materials follow the relationship PtMn > IrMn > PdMn > FeMn, highlighting the correlation between the spin-orbit coupling of nonmagnetic species and the magnitude of the spinmore » Hall effect in their antiferromagnetic alloys. These experiments are compared with first-principles calculations. Finally, engineering the properties of the antiferromagnets as well as their interfaces can pave the way for manipulation of the spin dependent transport properties in antiferromagnet-based spintronics.« less

  3. Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

    NASA Astrophysics Data System (ADS)

    Podzorov, Vitaly

    Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

  4. The quantum Hall effects: Philosophical approach

    NASA Astrophysics Data System (ADS)

    Lederer, P.

    2015-05-01

    The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

  5. Magnetic bilayer-skyrmions without skyrmion Hall effect

    NASA Astrophysics Data System (ADS)

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-01-01

    Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

  6. Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect

    NASA Astrophysics Data System (ADS)

    Mihajlović, G.; Mosendz, O.; Wan, L.; Smith, N.; Choi, Y.; Wang, Y.; Katine, J. A.

    2016-11-01

    We introduce a differential planar Hall effect method that enables the experimental study of spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device geometry. Using this method, we study the Pt thickness dependence of switching currents and show that they decrease monotonically down to the minimum experimental thickness of ˜5 nm, while the critical current and power densities are very weakly thickness dependent, exhibiting the minimum values of Jc0 = 1.1 × 108 A/cm2 and ρJc0 2=0.6 ×1012 W/cm 3 at this minimum thickness. Our results suggest that a significant reduction of the critical parameters could be achieved by optimizing the free layer magnetics, which makes this technology a viable candidate for fast, high endurance and low-error rate applications such as cache memories.

  7. Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R.; Qu, F.

    2013-12-28

    We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of themore » exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.« less

  8. Star Formation and the Hall Effect

    NASA Astrophysics Data System (ADS)

    Braiding, Catherine

    2011-10-01

    Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. This thesis describes a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, presenting similarity solutions that demonstrate that the Hall effect has a profound influence on the dynamics of collapse. ... Hall diffusion also determines the strength of the magnetic diffusion and centrifugal shocks that bound the pseudo and rotationally-supported discs, and can introduce subshocks that further slow accretion onto the protostar. In cores that are not initially rotating Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field would be worth exploring in future numerical simulations of star formation.

  9. Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

    DOE PAGES

    Rosen, Ilan T.; Fox, Eli J.; Kou, Xufeng; ...

    2017-12-01

    The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Crmore » $$_y$$Bi$$_x$$Sb$$_{1-x-y}$$)$$_2$$Te$$_3$$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $$\

  10. Tunnelling anomalous and planar Hall effects (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor

    2016-10-01

    We theoretically show how the interplay between spin-orbit coupling (SOC) and magnetism can result in a finite tunneling Hall conductance, transverse to the applied bias. For two-dimensional tunnel junctions with a ferromagnetic lead and magnetization perpendicular to the current flow, the detected anomalous Hall voltage can be used to extract information not only about the spin polarization but also about the strength of the interfacial SOC. In contrast, a tunneling current across a ferromagnetic barrier on the surface of a three-dimensional topological insulator (TI) can induce a planar Hall response even when the magnetization is oriented along the current flow[1]. The tunneling nature of the states contributing to the planar Hall conductance can be switched from the ordinary to the Klein regimes by the electrostatic control of the barrier strength. This allows for an enhancement of the transverse response and a giant Hall angle, with the tunneling planar Hall conductance exceeding the longitudinal component. Despite the simplicity of a single ferromagnetic region, the TI/ferromagnet system exhibits a variety of functionalities. In addition to a spin-valve operation for magnetic sensing and storing information, positive, negative, and negative differential conductances can be tuned by properly adjusting the barrier potential and/or varying the magnetization direction. Such different resistive behaviors in the same system are attractive for potential applications in reconfigurable spintronic devices. [1] B. Scharf, A. Matos-Abiague, J. E. Han, E. M. Hankiewicz, and I. Zutic, arXiv:1601.01009 (2016).

  11. Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Laczkowski, P.; Rojas-Sánchez, J.-C.; INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble

    2014-04-07

    We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

  12. The Hall effect in star formation

    NASA Astrophysics Data System (ADS)

    Braiding, C. R.; Wardle, M.

    2012-05-01

    Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well studied. We present a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, and similarity solutions that demonstrate the profound influence of the Hall effect on the dynamics of collapse. The solutions show that the size and sign of the Hall parameter can change the size of the protostellar disc by up to an order of magnitude and the protostellar accretion rate by 50 per cent when the ratio of the Hall to ambipolar diffusivities is varied between -0.5 ≤ηH/ηA≤ 0.2. These changes depend upon the orientation of the magnetic field with respect to the axis of rotation and create a preferred handedness to the solutions that could be observed in protostellar cores using next-generation instruments such as ALMA. Hall diffusion also determines the strength and position of the shocks that bound the pseudo and rotationally supported discs, and can introduce subshocks that further slow accretion on to the protostar. In cores that are not initially rotating (not examined here), Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field merits further exploration in numerical simulations of star formation.

  13. The Other Hall Effect: College Board Physics

    ERIC Educational Resources Information Center

    Sheppard, Keith; Gunning, Amanda M.

    2013-01-01

    Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

  14. Thermally driven anomalous Hall effect transitions in FeRh

    NASA Astrophysics Data System (ADS)

    Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

    2018-04-01

    Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

  15. Hall effect of copper nitride thin films

    NASA Astrophysics Data System (ADS)

    Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

    2005-08-01

    The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

  16. Spatially resolved Hall effect measurement in a single semiconductor nanowire.

    PubMed

    Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

    2012-11-01

    Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

  17. Nulling Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

    1993-01-01

    Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

  18. Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

    NASA Astrophysics Data System (ADS)

    Baily, Scott Alan

    The physical origin of the anomalous (proportional to magnetization) Hall effect is not very well understood. While many theories account for a Hall effect proportional to the magnetization of a material, these theories often predict effects significantly smaller than those found in ferromagnetic materials. An even more significant deficiency of the conventional theories is that they predict an anomalous Hall resistivity that is proportional to a power of the resistivity, and in the absence of a metal insulator transition cannot account for the anomalous Hall effect that peaks near TC. Recent models based on a geometric, or Berry, phase have had a great deal of success describing the anomalous Hall effect in double-exchange systems (e.g., lanthanum manganite and chromium dioxide). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the anomalous Hall effect may therefore resemble that of CrO2 and other metallic double-exchange ferromagnets. Lanthanum cobaltite is similar to manganite in many ways, but a strong double-exchange interaction is not present. Calcium-doped lanthanum cobaltite films were found to have the largest anomalous Hall effect of any ferromagnetic metal. The primary purpose of this study is to gain insight into the origin of the anomalous Hall effect with the hope that these theories can be extended to account for the effect in other materials. The Hall resistivity, magnetoresistance, and magnetization of a Gadolinium single crystal were measured in fields up to 30 T. Cobaltite films were grown via laser ablation and characterized by a variety of techniques. Hall resistivity, magnetoresistance, magnetization, and magnetothermopower of L 1-xCaxCoO3 samples with 0.15 < x < 0.4 were measured in fields up to 7 T. The Gd results suggest that Berry's phase contributes partially to the Hall effect near TC. Berry's phase theories hold promise for explaining the large anomalous Hall effect in

  19. Batch-fabricated high-performance graphene Hall elements

    PubMed Central

    Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

    2013-01-01

    Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

  20. Direct observation of the skyrmion Hall effect

    DOE PAGES

    Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang; ...

    2016-09-19

    The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

  1. Direct observation of the skyrmion Hall effect

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang

    The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

  2. Spontaneous Hall effect in a chiral p-wave superconductor

    NASA Astrophysics Data System (ADS)

    Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

    2001-08-01

    In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

  3. Destruction of the Fractional Quantum Hall Effect by Disorder

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1985-07-01

    It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

  4. Optimum Design Rules for CMOS Hall Sensors

    PubMed Central

    Crescentini, Marco; Biondi, Michele; Romani, Aldo; Tartagni, Marco; Sangiorgi, Enrico

    2017-01-01

    This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. PMID:28375191

  5. Optimum Design Rules for CMOS Hall Sensors.

    PubMed

    Crescentini, Marco; Biondi, Michele; Romani, Aldo; Tartagni, Marco; Sangiorgi, Enrico

    2017-04-04

    This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes.

  6. Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

    NASA Astrophysics Data System (ADS)

    Keswani, Neeti; Nakajima, Yoshikata; Chauhan, Neha; Kumar, Sakthi; Ohno, H.; Das, Pintu

    2018-05-01

    In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

  7. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    PubMed

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-05-17

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  8. Hall effect in a moving liquid

    NASA Astrophysics Data System (ADS)

    Di Lieto, Alberto; Giuliano, Alessia; Maccarrone, Francesco; Paffuti, Giampiero

    2012-01-01

    A simple experiment, suitable for performing in an undergraduate physics laboratory, illustrates electromagnetic induction through the water entering into a cylindrical rubber tube by detecting the voltage developed across the tube in the direction transverse both to the flow velocity and to the magnetic field. The apparatus is a very simple example of an electromagnetic flowmeter, a device which is commonly used both in industrial and physiological techniques. The phenomenology observed is similar to that of the Hall effect in the absence of an electric current in the direction of motion of the carriers. The experimental results show a dependence on the intensity of the magnetic field and on the carrier velocity, in good agreement with the theory. Discussion of the system, based on classical electromagnetism, indicates that the effect depends only on the flow rate, and is independent both of the velocity profile and of the electrical conductivity of the medium.

  9. Hall Effect Spintronics

    DTIC Science & Technology

    2014-01-01

    ferromagnetic films with perpendicular anisotropy were examined, and finally, the magnetoresistance and Hall effect in Manganese- doped Germanium was...interest in ferromagnetic semiconductors. Germanium doped with Mn is particularly interesting Distribution A: Approved for public release...unavoidable, and doped films are strongly inhomogeneous with GexMny, metallic precipitates coexisting with Mn-rich regions and Mn dilute matrix

  10. Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

  11. Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice.

    PubMed

    Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

    2018-06-13

    Using first-principles calculations, we predict an intrinsic quantum anomalous Hall (QAH) state in a monolayer anilato-based metal-organic framework M2(C6O4X2)3 (M = Mn and Tc, X = F, Cl, Br and I). The spin-orbit coupling of M d orbitals opens a nontrivial band gap up to 18 meV at the Dirac point. The electron counting rule is used to explain the intrinsic nature of the QAH state. The calculated nonzero Chern number, gapless edge states and quantized Hall conductance all confirm the nontrivial topological properties in the anilato-based lattice. Our findings provide an organic materials platform for the realization of the QAH effect without the need for magnetic and charge doping, which are highly desirable for the development of low-energy-consumption spintronic devices.

  12. Numerical analysis of Hall effect on the performance of magnetohydrodynamic heat shield system based on nonequilibrium Hall parameter model

    NASA Astrophysics Data System (ADS)

    Li, Kai; Liu, Jun; Liu, Weiqiang

    2017-01-01

    Magnetohydrodynamic (MHD) heat shield system, a novel thermal protection technique in the hypersonic field, has been paid much attention in recent years. In the real flight condition, not only the Lorentz force but also the Hall electric field is induced by the interaction between ionized air post shock and magnetic field. In order to analyze the action mechanisms of the Hall effect, numerical methods of coupling thermochemical nonequilibrium flow field with externally applied magnetic field as well as the induced electric field are constructed and validated. Based on the nonequilibrium model of Hall parameter, numerical simulations of the MHD heat shield system is conducted under two different magnetic induction strengths (B0=0.2 T, 0.5 T) on a reentry capsule forebody. Results show that, the Hall effect is the same under the two magnetic induction strengths when the wall is assumed to be conductive. For this case, with the Hall effect taken into account, the Lorentz force counter stream diminishes a lot and the circumferential component dominates, resulting that the heat flux and shock-off distance approach the case without MHD control. However, for the insulating wall, the Hall effect acts in different ways under these two magnetic induction strengths. For this case, with the Hall effect taken into account, the performance of MHD heat shield system approaches the case neglecting the Hall effect when B0 equals 0.2 T. Such performance becomes worse when B0 equals 0.5 T and the aerothermal environment on the capsule shoulder is even worse than the case without MHD control.

  13. Formulation of the relativistic quantum Hall effect and parity anomaly

    NASA Astrophysics Data System (ADS)

    Yonaga, Kouki; Hasebe, Kazuki; Shibata, Naokazu

    2016-06-01

    We present a relativistic formulation of the quantum Hall effect on Haldane sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term. We clarify particular features of the relativistic quantum Hall states with the use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to the relativistic quantum Hall states are investigated in detail. The mass term acts as an interpolating parameter between the relativistic and nonrelativistic quantum Hall effects. It is pointed out that the mass term unevenly affects the many-body physics of the positive and negative Landau levels as a manifestation of the "parity anomaly." In particular, we explicitly demonstrate the instability of the Laughlin state of the positive first relativistic Landau level with the reduction of the charge gap.

  14. Hall effect spintronics for gas detection

    NASA Astrophysics Data System (ADS)

    Gerber, A.; Kopnov, G.; Karpovski, M.

    2017-10-01

    We present the concept of magnetic gas detection by the extraordinary Hall effect. The technique is compatible with the existing conductometric gas detection technologies and allows the simultaneous measurement of two independent parameters: resistivity and magnetization affected by the target gas. Feasibility of the approach is demonstrated by detecting low concentration hydrogen using thin CoPd films as the sensor material. The Hall effect sensitivity of the optimized samples exceeds 240% per 104 ppm at hydrogen concentrations below 0.5% in the hydrogen/nitrogen atmosphere, which is more than two orders of magnitude higher than the sensitivity of the conductance detection.

  15. Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

    NASA Astrophysics Data System (ADS)

    Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

    2018-03-01

    We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

  16. A non-invasive Hall current distribution measurement system for Hall Effect thrusters

    NASA Astrophysics Data System (ADS)

    Mullins, Carl Raymond

    A direct, accurate method to measure thrust produced by a Hall Effect thruster on orbit does not currently exist. The ability to calculate produced thrust will enable timely and precise maneuvering of spacecraft---a capability particularly important to satellite formation flying. The means to determine thrust directly is achievable by remotely measuring the magnetic field of the thruster and solving the inverse magnetostatic problem for the Hall current density distribution. For this thesis, the magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned outside the channel of a 1.5 kW Colorado State University Hall thruster equipped with a center-mounted electride cathode. In this location, the static magnetic field is approximately 30 Gauss, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is greater than tens of milligauss, which is within the sensitivity range of the TMR sensors. Due to the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field along with a non-negativity constraint and a zero boundary condition provides current density distributions. Our system measures the sensor outputs at 2 MHz allowing the determination of the Hall current density distribution as a function of time. These data are shown in contour plots in sequential frames. The measured ratios between the average Hall current and the discharge current ranged from 0.1 to 10 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 2.0 kW exhibited a breathing mode of 37 kHz, which was in agreement with temporal measurements of the discharge current.

  17. Giant spin Hall effect in graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A.; Neto, Antonio H. Castro; Özyilmaz, Barbaros

    2014-09-01

    Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

  18. Nonlinearity in the effect of an inhomogeneous Hall angle

    NASA Astrophysics Data System (ADS)

    Koon, Daniel W.

    2007-03-01

    The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

  19. Graphene/Si CMOS hybrid hall integrated circuits.

    PubMed

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-07

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  20. Tutorial: Physics and modeling of Hall thrusters

    NASA Astrophysics Data System (ADS)

    Boeuf, Jean-Pierre

    2017-01-01

    Hall thrusters are very efficient and competitive electric propulsion devices for satellites and are currently in use in a number of telecommunications and government spacecraft. Their power spans from 100 W to 20 kW, with thrust between a few mN and 1 N and specific impulse values between 1000 and 3000 s. The basic idea of Hall thrusters consists in generating a large local electric field in a plasma by using a transverse magnetic field to reduce the electron conductivity. This electric field can extract positive ions from the plasma and accelerate them to high velocity without extracting grids, providing the thrust. These principles are simple in appearance but the physics of Hall thrusters is very intricate and non-linear because of the complex electron transport across the magnetic field and its coupling with the electric field and the neutral atom density. This paper describes the basic physics of Hall thrusters and gives a (non-exhaustive) summary of the research efforts that have been devoted to the modelling and understanding of these devices in the last 20 years. Although the predictive capabilities of the models are still not sufficient for a full computer aided design of Hall thrusters, significant progress has been made in the qualitative and quantitative understanding of these devices.

  1. Useful Pedagogical Applications of the Classical Hall Effect

    ERIC Educational Resources Information Center

    Houari, Ahmed

    2007-01-01

    One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

  2. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, S.

    2006-02-01

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

  3. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  4. Design and Testing of a Hall Effect Thruster with Additively Manufactured Components

    NASA Astrophysics Data System (ADS)

    Hopping, Ethan

    The UAH-78AM is a low-power Hall effect thruster developed at the University of Alabama in Huntsville to study the application of low-cost additive manufacturing in the design and fabrication of Hall thrusters. The goal of this project is to assess the feasibility of using unconventional materials to produce a low-cost functioning Hall effect thruster and consider how additive manufacturing can expand the design space and provide other benefits. The thruster features channel walls and a propellant distributor that were manufactured using 3D printing with a variety of materials including ABS, ULTEM, and glazed ceramic. A version of the thruster was tested at NASA Glenn Research Center to obtain performance metrics and to validate the ability of the thruster to produce thrust and sustain a discharge. The design of the thruster and the transient performance measurements are presented here. Measured thrust ranged from 17.2 mN to 30.4 mN over a discharge power of 280 W to 520 W with an anode Isp range of 870 s to 1450 s. Temperature limitations of materials used for the channel walls and propellant distributor limit the ability to run the thruster at thermal steady-state. While the current thruster design is not yet ready for continuous operation, revisions to the device that could enable longer duration tests are discussed.

  5. Tuning the stability and the skyrmion Hall effect in magnetic skyrmions by adjusting their exchange strengths with magnetic disks

    NASA Astrophysics Data System (ADS)

    Sun, L.; Wu, H. Z.; Miao, B. F.; Wu, D.; Ding, H. F.

    2018-06-01

    Magnetic skyrmion is a promising candidate for the future information technology due to its small size, topological protection and the ultralow current density needed to displace it. The applications, however, are currently limited by its narrow phase diagram and the skyrmion Hall effect which prevents the skyrmion motion at high speed. In this work, we study the Dzyaloshinskii-Moriya interaction induced magnetic skyrmion that exchange coupled with magnetic nano-disks utilizing the micromagnetic simulation. We find that the stability and the skyrmion Hall effect of the created skyrmion can be tuned effectively with the coupling strength, thus opens the space to optimize the performance of the skyrmion based devices.

  6. Hall-effect Thruster Channel Surface Properties Investigation (PREPRINT)

    DTIC Science & Technology

    2011-03-03

    Article 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Hall-effect Thruster Channel Surface Properties Investigation 5b...13. SUPPLEMENTARY NOTES For publication in the AIAA Journal of Propulsion and Power. 14. ABSTRACT Surface properties of Hall-effect thruster...incorporated into thruster simulations, and these models must account for evolution of channel surface properties due to thruster operation. Results from

  7. Hole mobilities and the effective Hall factor in p-type GaAs

    NASA Astrophysics Data System (ADS)

    Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

    1997-06-01

    We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

  8. Probing the thermal Hall effect using miniature capacitive strontium titanate thermometry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tinsman, Colin; Li, Gang; Asaba, Tomoya

    2016-06-27

    The thermal Hall effect is the thermal analog of the electrical Hall effect. Rarely observed in normal metals, thermal Hall signals have been argued to be a key property for a number of strongly correlated materials, such as high temperature superconductors, correlated topological insulators, and quantum magnets. The observation of the thermal Hall effect requires precise measurement of temperature in intense magnetic fields. Particularly at low temperature, resistive thermometers have a strong dependence on field, which makes them unsuitable for this purpose. We have created capacitive thermometers which instead measure the dielectric constant of strontium titanate (SrTiO{sub 3}). SrTiO{sub 3}more » approaches a ferroelectric transition, causing its dielectric constant to increase by a few orders of magnitude at low temperature. As a result, these thermometers are very sensitive at low temperature while having very little dependence on the applied magnetic field, making them ideal for thermal Hall measurements. We demonstrate this method by making measurements of the thermal Hall effect in Bismuth in magnetic fields of up to 10 T.« less

  9. Framing anomaly in the effective theory of the fractional quantum Hall effect.

    PubMed

    Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

    2015-01-09

    We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

  10. Nonlinear dynamics induced anomalous Hall effect in topological insulators

    PubMed Central

    Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

    2016-01-01

    We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

  11. Nonlinear dynamics induced anomalous Hall effect in topological insulators.

    PubMed

    Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

    2016-01-28

    We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

  12. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    PubMed Central

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

  13. ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

    DTIC Science & Technology

    2017-06-30

    17394 4 / 13 HALL EFFECT THRUSTERS Hall Effect Thrusters (HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid...HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ...Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ Electron ExB Drift Unmagnetized Ions Results in Hall Current

  14. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

    2015-05-11

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

  15. 76 FR 6476 - Town Hall Discussion With the Director of the Center for Devices and Radiological Health and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-04

    ... engage in a dialogue about issues of importance to FDA's Center for Devices and Radiological Health (CDRH...: I. Background In 2010, CDRH held three Town Hall meetings in Minneapolis, MN; Boston, MA; and Los... member of the public was invited to provide comments to or ask questions of CDRH participants. Due to the...

  16. 76 FR 41804 - Town Hall Discussion With the Director of the Center for Devices and Radiological Health and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-15

    ... dialogue about issues of importance to FDA's Center for Devices and Radiological Health (CDRH) and to... call 650- 589-3400 and request the group rate for the ``FDA/CDRH Town Hall Meeting'' block of rooms... between 9 a.m. and 4 p.m., Monday through Friday. SUPPLEMENTARY INFORMATION: I. Background In 2010, CDRH...

  17. High-Temperature Hall-Effect Apparatus

    NASA Technical Reports Server (NTRS)

    Wood, C.; Lockwood, R. A.; Chemielewski, A. B.; Parker, J. B.; Zoltan, A.

    1985-01-01

    Compact furnace minimizes thermal gradients and electrical noise. Semiautomatic Hall-effect apparatus takes measurements on refractory semiconductors at temperatures as high as 1,100 degrees C. Intended especially for use with samples of high conductivity and low chargecarrier mobility that exhibit low signal-to-noise ratios, apparatus carefully constructed to avoid spurious electromagnetic and thermoelectric effects that further degrade measurements.

  18. 3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

    NASA Astrophysics Data System (ADS)

    Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

    2017-09-01

    The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

  19. Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy

    NASA Astrophysics Data System (ADS)

    Hasebe, Kazuki

    2017-07-01

    We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.

  20. Giant photonic Hall effect in magnetophotonic crystals.

    PubMed

    Merzlikin, A M; Vinogradov, A P; Inoue, M; Granovsky, A B

    2005-10-01

    We have considered a simple, square, two-dimensional (2D) PC built of a magneto-optic matrix with square holes. It is shown that using such a magnetophotonic crystal it is possible to deflect a light beam at very large angles by applying a nonzero external magnetic field. The effect is called the giant photonic Hall effect (GPHE) or the magnetic superprism effect. The GPHE is based on magneto-optical properties, as is the photonic Hall effect [B. A. van Tiggelen and G. L. J. A. Rikken, in, edited by V. M. Shalaev (Springer-Verlag, Berlin, 2002), p. 275]; however GPHE is not caused by asymmetrical light scattering but rather by the influence of an external magnetic field on the photonic band structure.

  1. Inverse spin Hall effect by spin injection

    NASA Astrophysics Data System (ADS)

    Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

    2007-09-01

    Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

  2. High temperature hall effect measurement system design, measurement and analysis

    NASA Astrophysics Data System (ADS)

    Berkun, Isil

    A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non

  3. Quantum Hall effect in graphene with interface-induced spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

    2018-02-01

    We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

  4. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    NASA Astrophysics Data System (ADS)

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  5. The Hall Effect in Hydrided Rare Earth Films

    NASA Astrophysics Data System (ADS)

    Koon, D. W.; Azofeifa, D. E.; Clark, N.

    We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

  6. Mixed-state Hall effect of high-T(c) superconductors

    NASA Astrophysics Data System (ADS)

    Kang, Byeongwon

    In this dissertation, we presented the study on the mixed-state Hall effect of high-Tc superconductors (HTSs). In order to understand the mechanisms of the puzzling phenomena in the mixed-state Hall effect of HTSs, the Hall sign anomaly and scaling behavior, Hall measurements are conducted in several HTS thin films. We investigate the mechanism of the sign reversal of the Hall resistivity in Tl-2201 films when the electronic band structure is varied through the underdoped, optimally doped, and overdoped regions. It is found that the Hall sign reversals are an intrinsic property of HTSs and determined by electronic band structure. Although pinning is not found to be the mechanism behind sign reversals, pinning can suppress the appearance of the Hall sign reversal. Therefore, it is concluded that two (or more) sign reversals are a generic behavior of HTSs. From a systematic study of the vortex phase diagram, we discover several new features of the vortex liquid. In the presence of pinning, the vortex-liquid phase can be divided into two regions, a glassy liquid (GL) where vortices remain correlated as manifested in non-Ohmic resistivity, and a regular liquid (RL) where resistivity becomes Ohmic as vortices become uncorrelated. The field dependence of the Hall angle is found to be linear in the RL and nonlinear in the GL. Generally the decoupling line (Hk- T), which is defined as a boundary between the GL and the RL, is lower than the depinning line (Hd-T). As pinning increases the Hk-T may approach the Hd-T, thus vortices are decoupled and depinned nearly simultaneously. For a weak pinning system, on the other hand, the Hk-T and the Hd-T are well separated so that single vortices remain pinned in the region Hk ≤ H ≥ Hd. The behavior of s xy is also investigated in the GL and the RL. In the GL s xy is observed to strongly depend on pinning due to the inter-vortex correlation whereas in the RL s xy is independent of pinning since the pinning effect is scaled out.

  7. Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

    NASA Astrophysics Data System (ADS)

    Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri; Abanin, Dmitry A.; Levitov, Leonid S.; Kim, Philip

    2007-10-01

    We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

  8. Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

    NASA Astrophysics Data System (ADS)

    Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

    2016-10-01

    Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

  9. Nonlinear excitation of long-wavelength modes in Hall plasmas

    NASA Astrophysics Data System (ADS)

    Lakhin, V. P.; Ilgisonis, V. I.; Smolyakov, A. I.; Sorokina, E. A.

    2016-10-01

    Hall plasmas with magnetized electrons and unmagnetized ions exhibit a wide range of small scale fluctuations in the lower-hybrid frequency range as well as low-frequency large scale modes. Modulational instability of lower-hybrid frequency modes is investigated in this work for typical conditions in Hall plasma devices such as magnetrons and Hall thrusters. In these conditions, the dispersion of the waves in the lower-hybrid frequency range propagating perpendicular to the external magnetic field is due to the gradients of the magnetic field and the plasma density. It is shown that such lower-hybrid modes are unstable with respect to the secondary instability of the large scale quasimode perturbations. It is suggested that the large scale slow coherent modes observed in a number of Hall plasma devices may be explained as a result of such secondary instabilities.

  10. Anisotropic anomalous Hall effect in triangular itinerant ferromagnet Fe3GeTe2

    NASA Astrophysics Data System (ADS)

    Wang, Yihao; Xian, Cong; Wang, Jian; Liu, Bingjie; Ling, Langsheng; Zhang, Lei; Cao, Liang; Qu, Zhe; Xiong, Yimin

    2017-10-01

    Magnetic frustrated materials are of great interest for their novel spin-dependent transport properties. We report an anisotropic anomalous Hall effect in the triangular itinerant ferromagnet Fe3GeTe2 . When the current flows along the a b plane, Fe3GeTe2 exhibits the conventional anomalous Hall effect below the Curie temperature Tc, which can be depicted by Karplus-Luttinger theory. On the other hand, the topological Hall effect shows up below Tc with current along the c axis. The enhancement of Hall resistivity can be attributed to the chiral effect during the spin-flop process.

  11. Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state

    DOE PAGES

    Wang, Jing; Lian, Biao; Qi, Xiao-Liang; ...

    2015-08-10

    The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e²/2h$. Here in this paper, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setupmore » to eliminate nontopological contributions from the side surface.« less

  12. A holographic model for the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Lippert, Matthew; Meyer, René; Taliotis, Anastasios

    2015-01-01

    Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

  13. Hall effect at a tunable metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Teizer, W.; Hellman, F.; Dynes, R. C.

    2003-03-01

    Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient R0 is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. R0 diverges at the metal-insulator transition, and displays critical behavior with exponent -1 [R0˜(H-HC)-1]. This dependence is interpreted as a linear decrease in the density of mobile carriers n˜R-10˜H-HC, indicative of the dominant influence of interaction effects.

  14. Topological Phase Transitions in the Photonic Spin Hall Effect

    DOE PAGES

    Kort-Kamp, Wilton Junior de Melo

    2017-10-04

    The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valleymore » properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.« less

  15. Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Feng, Yang; Feng, Xiao; Ou, Yunbo

    We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

  16. Hall effect sensors embedded within two-pole toothless stator assembly

    NASA Technical Reports Server (NTRS)

    Denk, Joseph (Inventor); Grant, Richard J. (Inventor)

    1994-01-01

    A two-pole toothless PM machine employs Hall effect sensors to indicate the position of the machine's rotor relative to power windings in the machine's stator. The Hall effect sensors are located in the main magnetic air gap underneath the power windings. The main magnetic air gap is defined by an outer magnetic surface of the rotor and an inner surface of the stator's flux collector ring.

  17. Observation of the fractional quantum Hall effect in graphene.

    PubMed

    Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

    2009-11-12

    When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

  18. On-chip microwave circulators using quantum Hall plasmonics

    NASA Astrophysics Data System (ADS)

    Mahoney, Alice; Colless, James; Pauka, Sebastian; Hornibrook, John; Doherty, Andrew; Reilly, David; Peeters, Lucas; Fox, Eli; Goldhaber-Gordon, David; Kou, Xuefeng; Pan, Lei; Wang, Kang; Watson, John; Gardner, Geoffrey; Manfra, Michael

    Circulators are directional circuit elements integral to technologies including radar systems, microwave communication transceivers and the readout of quantum information devices. Their non-reciprocity commonly arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that breaks time-reversal symmetry. We present a completely passive on-chip microwave circulator with size 1/1000th the wavelength by exploiting the chiral, `slow-light' response of a GaAs/AlGaAs 2-dimensional electron gas in the quantum Hall regime. Further, by implementing this circulator design on a thin film of a magnetic topological insulator (Cr0.12(Bi0.26Sb0.62)2Te3), we show that similar non-reciprocity can be achieved at zero magnetic field. This additional mode of operation serves as a non-invasive probe of edge states in the quantum anomalous Hall effect, while also extending the possibility for integration with superconducting devices.

  19. Anomalous Hall Effect in a Feromagnetic Rare-Earth Cobalite

    NASA Technical Reports Server (NTRS)

    Samoilov, A. V.; Yeh, N. C.; Vasquez, R. P.

    1996-01-01

    Rare-Earth manganites and cobalites with the perovskite structure have been a subject of great recent interest because their electrical resistance changes significantly when a magnetic field is applied...we have studied the Hall effect in thin film La(sub 0.5)Ca(sub 0.5)CoO(sub 3) material and have obtained convincing evidence fo the so called anomalous Hall effect, typical for magnetic metals...Our results suggest that near the ferromagnetic ordering temperature, the dominant electron scattering mechanism is the spin fluctuation.

  20. Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

    PubMed

    Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2016-06-07

    Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

  1. Hall effect on a Merging Formation Process of a Field-Reversed Configuration

    NASA Astrophysics Data System (ADS)

    Kaminou, Yasuhiro; Guo, Xuehan; Inomoto, Michiaki; Ono, Yasushi; Horiuchi, Ritoku

    2015-11-01

    Counter-helicity spheromak merging is one of the formation methods of a Field-Reversed Configuration (FRC). In counter-helicity spheromak merging, two spheromaks with opposing toroidal fields merge together, through magnetic reconnection events and relax into a FRC, which has no or little toroidal field. This process contains magnetic reconnection and a relaxation phenomena, and the Hall effect has some essential effects on these process because the X-point in the magnetic reconnection or the O-point of the FRC has no or little magnetic field. However, the Hall effect as both global and local effect on counter-helicity spheromak merging has not been elucidated. In this poster, we conducted 2D/3D Hall-MHD simulations and experiments of counter-helicity spheromak merging. We find that the Hall effect enhances the reconnection rate, and reduces the generation of toroidal sheared-flow. The suppression of the ``slingshot effect'' affects the relaxation process. We will discuss details in the poster.

  2. Fractional Quantization of the Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-02-27

    The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.

  3. Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities

    NASA Astrophysics Data System (ADS)

    Laczkowski, P.; Fu, Y.; Yang, H.; Rojas-Sánchez, J.-C.; Noel, P.; Pham, V. T.; Zahnd, G.; Deranlot, C.; Collin, S.; Bouard, C.; Warin, P.; Maurel, V.; Chshiev, M.; Marty, A.; Attané, J.-P.; Fert, A.; Jaffrès, H.; Vila, L.; George, J.-M.

    2017-10-01

    We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as +0.5 (i.e., 50 % ) for about 10% of Ta. In contrast, the SHA in AuW does not exceed +0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than 85 μ Ω cm ), are promising for spintronic devices exploiting the SHE.

  4. Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

    NASA Astrophysics Data System (ADS)

    Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

    2016-09-01

    Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

  5. Generic superweak chaos induced by Hall effect

    NASA Astrophysics Data System (ADS)

    Ben-Harush, Moti; Dana, Itzhack

    2016-05-01

    We introduce and study the "kicked Hall system" (KHS), i.e., charged particles periodically kicked in the presence of uniform magnetic (B ) and electric (E ) fields that are perpendicular to each other and to the kicking direction. We show that for resonant values of B and E and in the weak-chaos regime of sufficiently small nonintegrability parameter κ (the kicking strength), there exists a generic family of periodic kicking potentials for which the Hall effect from B and E significantly suppresses the weak chaos, replacing it by "superweak" chaos (SWC). This means that the system behaves as if the kicking strength were κ2 rather than κ . For E =0 , SWC is known to be a classical fingerprint of quantum antiresonance, but it occurs under much less generic conditions, in particular only for very special kicking potentials. Manifestations of SWC are a decrease in the instability of periodic orbits and a narrowing of the chaotic layers, relative to the ordinary weak-chaos case. Also, for global SWC, taking place on an infinite "stochastic web" in phase space, the chaotic diffusion on the web is much slower than the weak-chaos one. Thus, the Hall effect can be relatively stabilizing for small κ . In some special cases, the effect is shown to cause ballistic motion for almost all parameter values. The generic global SWC on stochastic webs in the KHS appears to be the two-dimensional closest analog to the Arnol'd web in higher dimensional systems.

  6. Evidence for phonon skew scattering in the spin Hall effect of platinum

    NASA Astrophysics Data System (ADS)

    Karnad, G. V.; Gorini, C.; Lee, K.; Schulz, T.; Lo Conte, R.; Wells, A. W. J.; Han, D.-S.; Shahbazi, K.; Kim, J.-S.; Moore, T. A.; Swagten, H. J. M.; Eckern, U.; Raimondi, R.; Kläui, M.

    2018-03-01

    We measure and analyze the effective spin Hall angle of platinum in the low-residual resistivity regime by second-harmonic measurements of the spin-orbit torques for a multilayer of Pt |Co | AlOx . An angular-dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly nonmonotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperatures.

  7. Wireless power transfer exploring spin rectification and inverse spin Hall effects

    NASA Astrophysics Data System (ADS)

    Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

    2018-04-01

    Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

  8. Power Reduction of the Air-Breathing Hall-Effect Thruster

    NASA Astrophysics Data System (ADS)

    Kim, Sungrae

    Electric propulsion system is spotlighted as the next generation space propulsion system due to its benefits; one of them is specific impulse. While there are a lot of types in electric propulsion system, Hall-Effect Thruster, one of electric propulsion system, has higher thrust-to-power ratio and requires fewer power supplies for operation in comparison to other electric propulsion systems, which means it is optimal for long space voyage. The usual propellant for Hall-Effect Thruster is Xenon and it is used to be stored in the tank, which may increase the weight of the thruster. Therefore, one theory that uses the ambient air as a propellant has been proposed and it is introduced as Air-Breathing Hall-Effect Thruster. Referring to the analysis on Air-Breathing Hall-Effect Thruster, the goal of this paper is to reduce the power of the thruster so that it can be applied to real mission such as satellite orbit adjustment. To reduce the power of the thruster, two assumptions are considered. First one is changing the altitude for the operation, while another one is assuming the alpha value that is electron density to ambient air density. With assumptions above, the analysis was done and the results are represented. The power could be decreased to 10s˜1000s with the assumptions. However, some parameters that do not satisfy the expectation, which would be the question for future work, and it will be introduced at the end of the thesis.

  9. Roles of nonlocal conductivity on spin Hall angle measurement

    NASA Astrophysics Data System (ADS)

    Chen, Kai; Zhang, Shufeng

    2017-10-01

    Spin Hall angle characterizes the rate of spin-charge current conversion and it has become one of the most important material parameters for spintronics physics and device application. A long-standing controversy is that the spin Hall angles for a given material measured by spin pumping and by spin Hall torque experiments are inconsistent and they could differ by as much as an order of magnitude. By using the linear response spin transport theory, we explicitly formulate the relation between the spin Hall angle and measured variables in different experiments. We find that the nonlocal conductivity inherited in the layered structure plays a key role to resolve conflicting values of the spin Hall angle. We provide a generalized scheme for extracting spin transport coefficients from experimental data.

  10. Field-controllable Spin-Hall Effect of Light in Optical Crystals: A Conoscopic Mueller Matrix Analysis.

    PubMed

    Samlan, C T; Viswanathan, Nirmal K

    2018-01-31

    Electric-field applied perpendicular to the direction of propagation of paraxial beam through an optical crystal dynamically modifies the spin-orbit interaction (SOI), leading to the demonstration of controllable spin-Hall effect of light (SHEL). The electro- and piezo-optic effects of the crystal modifies the radially symmetric spatial variation in the fast-axis orientation of the crystal, resulting in a complex pattern with different topologies due to the symmetry-breaking effect of the applied field. This introduces spatially-varying Pancharatnam-Berry type geometric phase on to the paraxial beam of light, leading to the observation of SHEL in addition to the spin-to-vortex conversion. A wave-vector resolved conoscopic Mueller matrix measurement and analysis provides a first glimpse of the SHEL in the biaxial crystal, identified via the appearance of weak circular birefringence. The emergence of field-controllable fast-axis orientation of the crystal and the resulting SHEL provides a new degree of freedom for affecting and controlling the spin and orbital angular momentum of photons to unravel the rich underlying physics of optical crystals and aid in the development of active photonic spin-Hall devices.

  11. Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gladii, O.; Henry, Y.; Bailleul, M.

    2016-05-16

    We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 10{sup 11} A/m{sup 2} in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

  12. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    NASA Technical Reports Server (NTRS)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  13. Development of scanning graphene Hall probes for magnetic microscopy

    NASA Astrophysics Data System (ADS)

    Schaefer, Brian T.; Wang, Lei; McEuen, Paul L.; Nowack, Katja C.

    We discuss our progress on developing scanning Hall probes fabricated from hexagonal boron nitride (hBN)-encapsulated graphene, with the goal to image magnetic fields with submicron resolution. In contrast to scanning superconducting quantum interference device (SQUID) microscopy, this technique is compatible with a large applied magnetic field and not limited to cryogenic temperatures. The field sensitivity of a Hall probe depends inversely on carrier density, while the primary source of noise in the measurement is Johnson noise originating from the device resistance. hBN-encapsulated graphene demonstrates high carrier mobility at low carrier densities, therefore making it an ideal material for sensitive Hall probes. Furthermore, engineering the dielectric environment of graphene by encapsulating in hBN reduces low-frequency charge noise and disorder from the substrate. We outline our plans for adapting these devices for scanning, including characterization of the point spread function with a scanned current loop and fabrication of a deep-etched structure that enables positioning the sensitive area within 100 nanometers of the sample surface.

  14. Non-invasive Hall current distribution measurement in a Hall effect thruster

    NASA Astrophysics Data System (ADS)

    Mullins, Carl R.; Farnell, Casey C.; Farnell, Cody C.; Martinez, Rafael A.; Liu, David; Branam, Richard D.; Williams, John D.

    2017-01-01

    A means is presented to determine the Hall current density distribution in a closed drift thruster by remotely measuring the magnetic field and solving the inverse problem for the current density. The magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned just outside the thruster channel on a 1.5 kW Hall thruster equipped with a center-mounted hollow cathode. In the sensor array location, the static magnetic field is approximately 30 G, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is approximately tens of milligauss, which is within the sensitivity range of the TMR sensors. Because of the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field does provide the current density distributions. These distributions are shown as a function of time in contour plots. The measured ratios between the average Hall current and the average discharge current ranged from 6.1 to 7.3 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 1.5 kW exhibited a breathing mode frequency of 24 kHz, which was in agreement with temporal measurements of the discharge current.

  15. Non-invasive Hall current distribution measurement in a Hall effect thruster.

    PubMed

    Mullins, Carl R; Farnell, Casey C; Farnell, Cody C; Martinez, Rafael A; Liu, David; Branam, Richard D; Williams, John D

    2017-01-01

    A means is presented to determine the Hall current density distribution in a closed drift thruster by remotely measuring the magnetic field and solving the inverse problem for the current density. The magnetic field was measured by employing an array of eight tunneling magnetoresistive (TMR) sensors capable of milligauss sensitivity when placed in a high background field. The array was positioned just outside the thruster channel on a 1.5 kW Hall thruster equipped with a center-mounted hollow cathode. In the sensor array location, the static magnetic field is approximately 30 G, which is within the linear operating range of the TMR sensors. Furthermore, the induced field at this distance is approximately tens of milligauss, which is within the sensitivity range of the TMR sensors. Because of the nature of the inverse problem, the induced-field measurements do not provide the Hall current density by a simple inversion; however, a Tikhonov regularization of the induced field does provide the current density distributions. These distributions are shown as a function of time in contour plots. The measured ratios between the average Hall current and the average discharge current ranged from 6.1 to 7.3 over a range of operating conditions from 1.3 kW to 2.2 kW. The temporal inverse solution at 1.5 kW exhibited a breathing mode frequency of 24 kHz, which was in agreement with temporal measurements of the discharge current.

  16. Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

    NASA Astrophysics Data System (ADS)

    Fuseya, Yuki

    2015-03-01

    Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

  17. The Anomalous Hall Effect and Non-Equilibrium Transport

    NASA Astrophysics Data System (ADS)

    Ye, Fei

    1995-01-01

    This thesis contains three relatively independent research areas. In the first part of this thesis, the anomalous Hall effect of amorphous, high-resistance, Fe films (2 -10 monolayers thick) is investigated as a function of temperature. We find a logarithmic temperature dependence of the anomalous Hall resistance similar to the Coulomb anomaly of the resistance but twice its magnitude. The measurements are in excellent agreement with a theoretical calculation and provide us with an independent confirmation of the influence of the enhanced Coulomb interaction in disordered electron systems on transport properties. In the second part of the thesis, the nonequilibrium transport properties of metallic microstructures are studied. An electron beam lithography technique is used in making small structures. The electron temperature and phonon temperature are calculated. It is confirmed that the electron temperatures obtained from both thermometers (weak localization and the Coulomb anomaly) are consistent. It is also found that the phonon temperature in the film is considerably higher than the substrate temperature in the experiments. In addition, the dimensionality of the phonon system in the film is discussed, as well as the phonon escape time. In the third part, the magnetic behavior of V on Au films is studied. Weak localization and the anomalous Hall effect are used to investigate the magnetic properties of sub-mono, mono-, and multilayers of Vanadium on the surface of an Au film. Dilute V atoms possess a strong magnetic moment. For a monolayer the magnetic scattering is reduced by a factor of about 40. This suggests a strongly reduced moment of V compared with the dilute V coverage. From the anomalous Hall effect, it is concluded that the magnetic structure is anti-ferromagnetic; the moment per V atom in multilayers progressively diminishes but is still finite for 16 atomic layers of V. In Appendix A, the nonequilibrium distribution of the phonon system in a metal

  18. Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

    NASA Astrophysics Data System (ADS)

    Ferreira, Aires; Milletari, Mirco

    Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

  19. Quasiparticle Aggregation in the Fractional Quantum Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-10-10

    Quasiparticles in the Fractional Quantum Hall Effect behave qualitatively like electrons confined to the lowest landau level, and can do everything electrons can do, including condense into second generation Fractional Quantum Hall ground states. I review in this paper the reasoning leading to variational wavefunctions for ground state and quasiparticles in the 1/3 effect. I then show how two-quasiparticle eigenstates are uniquely determined from symmetry, and how this leads in a natural way to variational wavefunctions for composite states which have the correct densities (2/5, 2/7, ...). I show in the process that the boson, anyon and fermion representations for the quasiparticles used by Haldane, Halperin, and me are all equivalent. I demonstrate a simple way to derive Halperin`s multiple-valued quasiparticle wavefunction from the correct single-valued electron wavefunction. (auth)

  20. Hall effect on magnetohydrodynamic instabilities at an elliptic magnetic stagnation line

    NASA Astrophysics Data System (ADS)

    Spies, Günther O.; Faghihi, Mustafa

    1987-06-01

    To answer the question whether the Hall effect removes the unphysical feature of ideal magnetohydrodynamics of predicting small wavelength kink instabilities at any elliptic magnetic stagnation line, a normal mode analysis is performed of the motion of an incompressible Hall fluid about cylindrical Z-pinch equilibria with circular cross sections. The eigenvalue loci in the complex frequency plane are derived for the equilibrium with constant current density. Every particular mode becomes stable as the Hall parameter exceeds a critical value. This value, however, depends on the mode such that it increases to infinity as the ideal growth rate decreases to zero, implying that there always remains an infinite number of slowly growing instabilities. Correspondingly, the stability criterion for equilibria with arbitrary current distributions is independent of the Hall parameter.

  1. Effect of quantum tunneling on spin Hall magnetoresistance

    NASA Astrophysics Data System (ADS)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-01

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  2. Spin-Hall Switching of In-plane Exchange Biased Heterostructures

    NASA Astrophysics Data System (ADS)

    Mann, Maxwell; Beach, Geoffrey

    The spin Hall effect (SHE) in heavy-metal/ferromagnet bilayers generates a pure transverse spin current from in-plane charge current, allowing for efficient switching of spintronic devices with perpendicular magnetic anisotropy. Here, we demonstrate that an AFM deposited adjacent to the FM establishes a large in-plane exchange bias field, allowing operation at zero HIP. We sputtered Pt(3nm)/Co(0.9nm)/Ni80Co20O(tAF) stacks at room-temperature in an in-plane magnetic field of 3 kOe. The current-induced effective field was estimated in Hall cross devices by measuring the variation of the out-of-plane switching field as a function of JIP and HIP. The spin torque efficiency, dHSL/dJIP, is measured versus HIP for a sample with tAF =30 nm, and for a control in which NiCoO is replaced by TaOx. In the latter, dHSL/dJIP varied linearly with HIP. In the former, dHSL/dJIP varied nonlinearly with HIP and exhibited an offset indicating nonzero spin torque efficiency with zero HIP. The magnitude of HEB was 600 Oe in-plane.

  3. Hall-effect arc protector

    DOEpatents

    Rankin, R.A.; Kotter, D.K.

    1997-05-13

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored. 2 figs.

  4. Hall-effect arc protector

    DOEpatents

    Rankin, Richard A.; Kotter, Dale K.

    1997-01-01

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored.

  5. ADHM and the 4d quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Barns-Graham, Alec; Dorey, Nick; Lohitsiri, Nakarin; Tong, David; Turner, Carl

    2018-04-01

    Yang-Mills instantons are solitonic particles in d = 4 + 1 dimensional gauge theories. We construct and analyse the quantum Hall states that arise when these particles are restricted to the lowest Landau level. We describe the ground state wavefunctions for both Abelian and non-Abelian quantum Hall states. Although our model is purely bosonic, we show that the excitations of this 4d quantum Hall state are governed by the Nekrasov partition function of a certain five dimensional supersymmetric gauge theory with Chern-Simons term. The partition function can also be interpreted as a variant of the Hilbert series of the instanton moduli space, counting holomorphic sections rather than holomorphic functions. It is known that the Hilbert series of the instanton moduli space can be rewritten using mirror symmetry of 3d gauge theories in terms of Coulomb branch variables. We generalise this approach to include the effect of a five dimensional Chern-Simons term. We demonstrate that the resulting Coulomb branch formula coincides with the corresponding Higgs branch Molien integral which, in turn, reproduces the standard formula for the Nekrasov partition function.

  6. Magnetic mirror effect in a cylindrical Hall thruster

    NASA Astrophysics Data System (ADS)

    Jiang, Yiwei; Tang, Haibin; Ren, Junxue; Li, Min; Cao, Jinbin

    2018-01-01

    For cylindrical Hall thrusters, the magnetic field geometry is totally different from that in conventional Hall thrusters. In this study, we investigate the magnetic mirror effect in a fully cylindrical Hall thruster by changing the number of iron rings (0-5), which surround the discharge channel wall. The plasma properties inside the discharge channel and plume area are simulated with a self-developed PIC-MCC code. The numerical results show significant influence of magnetic geometry on the electron confinement. With the number of rings increasing above three, the near-wall electron density gap is reduced, indicating the suppression of neutral gas leakage. The electron temperature inside the discharge channel reaches its peak (38.4 eV) when the magnetic mirror is strongest. It is also found that the thruster performance has strong relations with the magnetic mirror as the propellant utilisation efficiency reaches the maximum (1.18) at the biggest magnetic mirror ratio. Also, the optimal magnetic mirror improves the multi-charged ion dynamics, including the ion production and propellant utilisation efficiency.

  7. Inverse spin Hall effect in a closed loop circuit

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Omori, Y.; Auvray, F.; Wakamura, T.

    We present measurements of inverse spin Hall effects (ISHEs), in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

  8. Reversible electrical-field control of magnetization and anomalous Hall effect in Co/PMN-PT hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, J.; Huang, Q. K.; Lu, S. Y.; Tian, Y. F.; Chen, Y. X.; Bai, L. H.; Dai, Y.; Yan, S. S.

    2018-04-01

    Room-temperature reversible electrical-field control of the magnetization and the anomalous Hall effect was reported in hybrid multiferroic heterojunctions based on Co/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT). We demonstrate herein that electrical-field-induced strain and oxygen-ion migration in ZnO/Co/PMN-PT junctions exert opposing effects on the magnetic properties of the Co sublayer, and the competition between these effects determines the final magnitude of magnetization. This proof-of-concept investigation opens an alternative way to optimize and enhance the electrical-field effect on magnetism through the combination of multiple electrical manipulation mechanisms in hybrid multiferroic devices.

  9. Macroscopic Quantum Phase-Locking Model for the Quantum Hall = Effect

    NASA Astrophysics Data System (ADS)

    Wang, Te-Chun; Gou, Yih-Shun

    1997-08-01

    A macroscopic model of nonlinear dissipative phase-locking between a Josephson-like frequency and a macroscopic electron wave frequency is proposed to explain the Quantum Hall Effect. It is well known that a r.f-biased Josephson junction displays a collective phase-locking behavior which can be described by a non-autonomous second order equation or an equivalent 2+1-dimensional dynamical system. Making a direct analogy between the QHE and the Josephson system, this report proposes a computer-solving nonlinear dynamical model for the quantization of the Hall resistance. In this model, the Hall voltage is assumed to be proportional to a Josephson-like frequency and the Hall current is assumed related to a coherent electron wave frequency. The Hall resistance is shown to be quantized in units of the fine structure constant as the ratio of these two frequencies are locked into a rational winding number. To explain the sample-width dependence of the critical current, the 2DEG under large applied current is further assumed to develop a Josephson-like junction array in which all Josephson-like frequencies are synchronized. Other remarkable features of the QHE such as the resistance fluctuation and the even-denominator states are also discussed within this picture.

  10. Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

    2017-02-01

    Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

  11. Effects of Ionospheric Hall Polarization on Magnetospheric Configurations and Dynamics in Global MHD Simulation

    NASA Astrophysics Data System (ADS)

    Nakamizo, A.; Yoshikawa, A.; Tanaka, T.

    2017-12-01

    We investigate how the M-I coupling and boundary conditions affects the results of global simulations of the magnetosphere. More specifically, we examine the effects of ionospheric Hall polarization on magnetospheric convection and dynamics by using an MHD code developed by Tanaka et al. [2010]. This study is motivated by the recently proposed idea that the ionospheric convection is modified by the ionospheric polarization [Yoshikawa et al., 2013]. We perform simulations for the following pairs of Hall conductance and IMF-By; Hall conductance set by αH = 2, 3.5, 5, and uniform distribution (1.0 [S] everywhere), where RH is the ratio of Hall to Pedersen conductance, and IMF-By of positive, negative, and zero. The results are summarized as follows. (a) Large-scale structure: In the cases of uniform Hall conductance, the magnetosphere is completely symmetric under the zero IMF-By. In the cases of non-uniform Hall conductance, the magnetosphere shows asymmetries globally even under the zero IMF-By. Asymmetries become severe for larger αH. The results indicate that ionospheric Hall polarization is one of the important factors to determine the global structure. (b) Formation of NENL: The location becomes closer to the earth and timing becomes earlier for larger RH. The difference is considered to be related to the combined effects of field lines twisting due to ionospheric Hall polarization and M-I energy/current closures. (c) Near-earth convection: In the cases of non-uniform Hall conductance, an inflection structure is formed around premidnight sector on equatorial plane inside 10 RE. Considering that the region 2 FAC is not sufficiently generated in MHD models, the structure corresponds to a convection reversal often shown in the RCM. Previous studies regard the structure as the Harang Reversal in the magnetosphere. In the cases of uniform Hall conductance, by contrast, such structure is not formed, indicating that the Harang Reversal may not be formed without the

  12. Developments in Scanning Hall Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Chouinard, Taras; Chu, Ricky; David, Nigel; Broun, David

    2009-05-01

    Low temperature scanning Hall probe microscopy is a sensitive means of imaging magnetic structures with high spatial resolution and magnetic flux sensitivity approaching that of a Superconducting Quantum Interference Device. We have developed a scanning Hall probe microscope with novel features, including highly reliable coarse positioning, in situ optimization of sensor-sample alignment and capacitive transducers for linear, long range positioning measurement. This has been motivated by the need to reposition accurately above fabricated nanostructures such as small superconducting rings. Details of the design and performance will be presented as well as recent progress towards time-resolved measurements with sub nanosecond resolution.

  13. Can Hall effect trigger Kelvin-Helmholtz instability in sub-Alfvénic flows?

    NASA Astrophysics Data System (ADS)

    Pandey, B. P.

    2018-05-01

    In the Hall magnetohydrodynamics, the onset condition of the Kelvin-Helmholtz instability is solely determined by the Hall effect and is independent of the nature of shear flows. In addition, the physical mechanism behind the super- and sub-Alfvénic flows becoming unstable is quite different: the high-frequency right circularly polarized whistler becomes unstable in the super-Alfvénic flows whereas low-frequency, left circularly polarized ion-cyclotron wave becomes unstable in the presence of sub-Alfvénic shear flows. The growth rate of the Kelvin-Helmholtz instability in the super-Alfvénic case is higher than the corresponding ideal magnetohydrodynamic rate. In the sub-Alfvénic case, the Hall effect opens up a new, hitherto inaccessible (to the magnetohydrodynamics) channel through which the partially or fully ionized fluid can become Kelvin-Helmholtz unstable. The instability growth rate in this case is smaller than the super-Alfvénic case owing to the smaller free shear energy content of the flow. When the Hall term is somewhat smaller than the advection term in the induction equation, the Hall effect is also responsible for the appearance of a new overstable mode whose growth rate is smaller than the purely growing Kelvin-Helmholtz mode. On the other hand, when the Hall diffusion dominates the advection term, the growth rate of the instability depends only on the Alfvén -Mach number and is independent of the Hall diffusion coefficient. Further, the growth rate in this case linearly increases with the Alfvén frequency with smaller slope for sub-Alfvénic flows.

  14. MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

    NASA Astrophysics Data System (ADS)

    Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

    2018-06-01

    We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

  15. Anomalous Nernst and Hall effects in magnetized platinum and palladium

    NASA Astrophysics Data System (ADS)

    Guo, G. Y.; Niu, Q.; Nagaosa, N.

    2014-06-01

    We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band-structure calculations. We find that both the anomalous Hall (σxyA) and Nernst (αxyA) conductivities can be related to the spin Hall conductivity (σxyS) and band exchange splitting (Δex) by relations σxyA=ΔexeℏσxyS(EF)' and αxyA=-π23kB2TΔexℏσxys(μ )'', respectively. In particular, these relations would predict that the σxyA in the magnetized Pt (Pd) would be positive (negative) since the σxyS(EF)' is positive (negative). Furthermore, both σxyA and αxyA are approximately proportional to the induced spin magnetic moment (ms) because the Δex is a linear function of ms. Using the reported ms in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.

  16. Hall effect in quantum critical charge-cluster glass

    PubMed Central

    Wu, Jie; Bollinger, Anthony T.; Sun, Yujie; Božović, Ivan

    2016-01-01

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ∼ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps, Δx ∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state. PMID:27044081

  17. Hall effect in quantum critical charge-cluster glass.

    PubMed

    Wu, Jie; Bollinger, Anthony T; Sun, Yujie; Božović, Ivan

    2016-04-19

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4(LSCO) samples doped near the quantum critical point atx∼ 0.06. Dramatic fluctuations in the Hall resistance appear belowTCG∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,Δx∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.

  18. Termination of the spin-resolved integer quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Wong, L. W.; Jiang, H. W.; Palm, E.; Schaff, W. J.

    1997-03-01

    We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlxGa1-xAs heterostructure. We have found that, for a given Nth Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δνN=\\|νN↑-νN↓\\| changes rapidly from one to zero near a critical density nc. Scaling analysis shows that δνN collapses onto a single curve independent of N when plotted against the parameter (n-nc)/nc for five Landau levels. The effect of increasing the Zeeman energy is also examined by tilting the direction of magnetic field relative to the plane of the two-dimensional electron gas. Our experiment suggests the termination of the spin-resolved quantum Hall effect is a phase transition.

  19. Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

    NASA Astrophysics Data System (ADS)

    Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne

    2018-05-01

    Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ˜3.9 × 1014 cm-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

  20. Electrical manipulation of edge states in graphene and the effect on quantum Hall transport

    NASA Astrophysics Data System (ADS)

    Ostahie, B.; NiÅ£ǎ, M.; Aldea, A.

    2015-04-01

    We investigate the properties of Dirac electrons in a finite graphene sample under a perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the edge-type wave functions evidence the presence of shortcut edge states that appear under the influence of the electric field. The states are characterized by a specific spatial distribution, which follows only partially the perimeter, and exhibit ridges that connect opposite sides of the graphene plaquette. Two kinds of such states have been found in different regions of the spectrum, and their particular spatial localization is shown along with the diamagnetic moments that reveal their chirality. By simulating a four-lead Hall device, we investigate the transport properties and observe unconventional plateaus of the integer quantum Hall effect that are associated with the presence of the shortcut edge states. We show the contributions of the novel states to the conductance matrix that determine the new transport properties. The shortcut edge states resulting from the splitting of the n =0 Landau level represent a special case, giving rise to nontrivial transverse and longitudinal resistance.

  1. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

    NASA Astrophysics Data System (ADS)

    Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

    2015-04-01

    Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10-9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

  2. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

    PubMed Central

    Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

    2015-01-01

    Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

  3. A review of the quantum Hall effects in MgZnO/ZnO heterostructures

    NASA Astrophysics Data System (ADS)

    Falson, Joseph; Kawasaki, Masashi

    2018-05-01

    This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

  4. Direct comparison of fractional and integer quantized Hall resistance

    NASA Astrophysics Data System (ADS)

    Ahlers, Franz J.; Götz, Martin; Pierz, Klaus

    2017-08-01

    We present precision measurements of the fractional quantized Hall effect, where the quantized resistance {{R}≤ft[ 1/3 \\right]} in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance {{R}[2]} , represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1-(5.3  ±  6.3) 10-8 (95% confidence level) was obtained for the ratio ({{R}≤ft[ 1/3 \\right]}/6{{R}[2]} ). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e 2) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the upcoming revision of the SI.

  5. Fractional quantum Hall effect at Landau level filling ν = 4/11

    DOE PAGES

    Pan, W.; Baldwin, K. W.; West, K. W.; ...

    2015-01-09

    In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy, within 1% of the expected value of h/(4/11)e 2, were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν =more » 3/8 and 5/13.« less

  6. Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

    NASA Astrophysics Data System (ADS)

    Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

    The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

  7. Hall effect in the coma of 67P/Churyumov-Gerasimenko

    NASA Astrophysics Data System (ADS)

    Huang, Z.; Tóth, G.; Gombosi, T. I.; Jia, X.; Combi, M. R.; Hansen, K. C.; Fougere, N.; Shou, Y.; Tenishev, V.; Altwegg, K.; Rubin, M.

    2018-04-01

    Magnetohydrodynamics simulations have been carried out in studying the solar wind and cometary plasma interactions for decades. Various plasma boundaries have been simulated and compared well with observations for comet 1P/Halley. The Rosetta mission, which studies comet 67P/Churyumov-Gerasimenko, challenges our understanding of the solar wind and comet interactions. The Rosetta Plasma Consortium observed regions of very weak magnetic field outside the predicted diamagnetic cavity. In this paper, we simulate the inner coma with the Hall magnetohydrodynamics equations and show that the Hall effect is important in the inner coma environment. The magnetic field topology becomes complex and magnetic reconnection occurs on the dayside when the Hall effect is taken into account. The magnetic reconnection on the dayside can generate weak magnetic field regions outside the global diamagnetic cavity, which may explain the Rosetta Plasma Consortium observations. We conclude that the substantial change in the inner coma environment is due to the fact that the ion inertial length (or gyro radius) is not much smaller than the size of the diamagnetic cavity.

  8. Anomalous Hall effect in ZrTe5

    NASA Astrophysics Data System (ADS)

    Liang, Tian; Lin, Jingjing; Gibson, Quinn; Kushwaha, Satya; Liu, Minhao; Wang, Wudi; Xiong, Hongyu; Sobota, Jonathan A.; Hashimoto, Makoto; Kirchmann, Patrick S.; Shen, Zhi-Xun; Cava, R. J.; Ong, N. P.

    2018-05-01

    Research in topological matter has expanded to include the Dirac and Weyl semimetals1-10, which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated in the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. This suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.

  9. Quantum anomalous Hall effect in magnetic topological insulators

    DOE PAGES

    Wang, Jing; Lian, Biao; Zhang, Shou -Cheng

    2015-08-25

    The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We presentmore » the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.« less

  10. Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

    NASA Astrophysics Data System (ADS)

    Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

    2018-04-01

    The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

  11. Hall effect in quantum critical charge-cluster glass

    DOE PAGES

    Bozovic, Ivan; Wu, Jie; Bollinger, Anthony T.; ...

    2016-04-04

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La 2-xSr xCuO 4 (LSCO) samples doped near the quantum critical point at x ≈ 0.06. Dramatic fluctuations in the Hall resistance appear below T CG ≈ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is variedmore » in extremely fine steps, Δx ≈ 0.00008. Furthermore, we observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.« less

  12. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    NASA Astrophysics Data System (ADS)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  13. Metallic Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

    2016-01-01

    A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional non-magnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

  14. Metallic Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

    2018-01-01

    A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional nonmagnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

  15. Carbon Back Sputter Modeling for Hall Thruster Testing

    NASA Technical Reports Server (NTRS)

    Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John Tamin

    2016-01-01

    Lifetime requirements for electric propulsion devices, including Hall Effect thrusters, are continually increasing, driven in part by NASA's inclusion of this technology in it's exploration architecture. NASA will demonstrate high-power electric propulsion system on the Solar Electric Propulsion Technology Demonstration Mission (SEP TDM). The Asteroid Redirect Robotic mission is one candidate SEP TDM, which is projected to require tens of thousands of thruster life. As thruster life is increased, for example through the use of improved magnetic field designs, the relative influence of facility effects increases. One such effect is the sputtering and redeposition, or back sputter, of facility materials by the high energy thruster plumes. In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) project, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Center's Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 1 micron/kh in a fully carbon-lined chamber. A more detailed numerical Monte Carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values on the order of 1.5 - 2 micron/kh at 600 V and 12.5 kW.

  16. Robert B. Laughlin and the Fractional Quantum Hall Effect

    Science.gov Websites

    dropdown arrow Site Map A-Z Index Menu Synopsis Robert B. Laughlin and the Fractional Quantum Hall Effect Tsui discovered the effect. In 1983, Laughlin, then at the Lawrence Livermore National Laboratory , provided the theoretical explanation of the effect in terms of fractionally charged particles. It was a

  17. Spin Hall effect originated from fractal surface

    NASA Astrophysics Data System (ADS)

    Hajzadeh, I.; Mohseni, S. M.; Movahed, S. M. S.; Jafari, G. R.

    2018-05-01

    The spin Hall effect (SHE) has shown promising impact in the field of spintronics and magnonics from fundamental and practical points of view. This effect originates from several mechanisms of spin scatterers based on spin–orbit coupling (SOC) and also can be manipulated through the surface roughness. Here, the effect of correlated surface roughness on the SHE in metallic thin films with small SOC is investigated theoretically. Toward this, the self-affine fractal surface in the framework of the Born approximation is exploited. The surface roughness is described by the k-correlation model and is characterized by the roughness exponent H , the in-plane correlation length ξ and the rms roughness amplitude δ. It is found that the spin Hall angle in metallic thin film increases by two orders of magnitude when H decreases from H  =  1 to H  =  0. In addition, the source of SHE for surface roughness with Gaussian profile distribution function is found to be mainly the side jump scattering while that with a non-Gaussian profile suggests both of the side jump and skew scatterings are present. Our achievements address how details of the surface roughness profile can adjust the SHE in non-heavy metals.

  18. Quantum Nonlinear Hall Effect Induced by Berry Curvature Dipole in Time-Reversal Invariant Materials.

    PubMed

    Sodemann, Inti; Fu, Liang

    2015-11-20

    It is well known that a nonvanishing Hall conductivity requires broken time-reversal symmetry. However, in this work, we demonstrate that Hall-like currents can occur in second-order response to external electric fields in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the driving frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. The nonlinear Hall coefficient is a rank-two pseudotensor, whose form is determined by point group symmetry. We discus optimal conditions to observe this effect and propose candidate two- and three-dimensional materials, including topological crystalline insulators, transition metal dichalcogenides, and Weyl semimetals.

  19. Measurement of Blood Pressure Using an Arterial Pulsimeter Equipped with a Hall Device

    PubMed Central

    Lee, Sang-Suk; Nam, Dong-Hyun; Hong, You-Sik; Lee, Woo-Beom; Son, Il-Ho; Kim, Keun-Ho; Choi, Jong-Gu

    2011-01-01

    To measure precise blood pressure (BP) and pulse rate without using a cuff, we have developed an arterial pulsimeter consisting of a small, portable apparatus incorporating a Hall device. Regression analysis of the pulse wave measured during testing of the arterial pulsimeter was conducted using two equations of the BP algorithm. The estimated values of BP obtained by the cuffless arterial pulsimeter over 5 s were compared with values obtained using electronic or liquid mercury BP meters. The standard deviation between the estimated values and the measured values for systolic and diastolic BP were 8.3 and 4.9, respectively, which are close to the range of values of the BP International Standard. Detailed analysis of the pulse wave measured by the cuffless radial artery pulsimeter by detecting changes in the magnetic field can be used to develop a new diagnostic algorithm for BP, which can be applied to new medical apparatus such as the radial artery pulsimeter. PMID:22319381

  20. Confinement effect of cylindrical-separatrix-type magnetic field on the plume of magnetic focusing type Hall thruster

    NASA Astrophysics Data System (ADS)

    Yu, Daren; Meng, Tianhang; Ning, Zhongxi; Liu, Hui

    2017-04-01

    A magnetic focusing type Hall thruster was designed with a cylindrical magnetic seperatrix. During the process of a hollow cathode crossing the separatrix, the variance of plume parameter distribution was monitored. Results show that the ion flux on the large spatial angle is significantly lower when the hollow cathode is located in the inner magnetic field. This convergence effect is preserved even in a distant area. A mechanism was proposed for plume divergence from the perspective of cathode-to-plume potential difference, through which the confinement effect of cylindrical-separatrix-type magnetic field on thruster plume was confirmed and proposed as a means of plume protection for plasma propulsion devices.

  1. Fabry-Perot Interferometry in the Integer and Fractional Quantum Hall Regimes

    NASA Astrophysics Data System (ADS)

    McClure, Douglas; Chang, Willy; Kou, Angela; Marcus, Charles; Pfeiffer, Loren; West, Ken

    2011-03-01

    We present measurements of electronic Fabry-Perot interferometers in the integer and fractional quantum Hall regimes. Two classes of resistance oscillations may be seen as a function of magnetic field and gate voltage, as we have previously reported. In small interferometers in the integer regime, oscillations of the type associated with Coulomb interaction are ubiquitous, while those consistent with single-particle Aharonov-Bohm interference are seen to co-exist in some configurations. The amplitude scaling of both types with temperature and device size is consistent with a theoretical model. Oscillations are further observed in the fractional quantum Hall regime. Here the dependence of the period on the filling factors in the constrictions and bulk of the interferometer can shed light on the effective charge of the interfering quasiparticles, but care is needed to distinguish these oscillations from those associated with integer quantum Hall states. We acknowledge funding from Microsoft Project Q and IBM.

  2. Spontaneous magnetization and anomalous Hall effect in an emergent Dice lattice

    PubMed Central

    Dutta, Omjyoti; Przysiężna, Anna; Zakrzewski, Jakub

    2015-01-01

    Ultracold atoms in optical lattices serve as a tool to model different physical phenomena appearing originally in condensed matter. To study magnetic phenomena one needs to engineer synthetic fields as atoms are neutral. Appropriately shaped optical potentials force atoms to mimic charged particles moving in a given field. We present the realization of artificial gauge fields for the observation of anomalous Hall effect. Two species of attractively interacting ultracold fermions are considered to be trapped in a shaken two dimensional triangular lattice. A combination of interaction induced tunneling and shaking can result in an emergent Dice lattice. In such a lattice the staggered synthetic magnetic flux appears and it can be controlled with external parameters. The obtained synthetic fields are non-Abelian. Depending on the tuning of the staggered flux we can obtain either anomalous Hall effect or its quantized version. Our results are reminiscent of Anomalous Hall conductivity in spin-orbit coupled ferromagnets. PMID:26057635

  3. Precision Electron Beam Polarimetry in Hall C at Jefferson Lab

    NASA Astrophysics Data System (ADS)

    Gaskell, David

    2013-10-01

    The electron beam polarization in experimental Hall C at Jefferson Lab is measured using two devices. The Hall-C/Basel Møller polarimeter measures the beam polarization via electron-electron scattering and utilizes a novel target system in which a pure iron foil is driven to magnetic saturation (out of plane) using a superconducting solenoid. A Compton polarimeter measures the polarization via electron-photon scattering, where the photons are provided by a high-power, CW laser coupled to a low gain Fabry-Perot cavity. In this case, both the Compton-scattered electrons and backscattered photons provide measurements of the beam polarization. Results from both polarimeters, acquired during the Q-Weak experiment in Hall C, will be presented. In particular, the results of a test in which the Møller and Compton polarimeters made interleaving measurements at identical beam currents will be shown. In addition, plans for operation of both devices after completion of the Jefferson Lab 12 GeV Upgrade will also be discussed.

  4. Anomalous Hall effect in ZrTe 5

    DOE PAGES

    Liang, Tian; Lin, Jingjing; Gibson, Quinn; ...

    2018-03-19

    Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

  5. Anomalous Hall effect in ZrTe 5

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liang, Tian; Lin, Jingjing; Gibson, Quinn

    Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

  6. Admittance measurements in the quantum Hall effect regime

    NASA Astrophysics Data System (ADS)

    Hernández, C.; Consejo, C.; Chaubet, C.

    2014-11-01

    In this work we present an admittance study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. We have studied several Hall bars in different contacts configurations in the frequency range 100 Hz-1 MHz. Our interpretation is based on the Landauer-Büttiker theory and takes into account both the capacitance and the topology of the coaxial cables which are connected to the sample holder. We show that we always observe losses through the capacitive impedance of the coaxial cables, except in the two contacts configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the 2DEG and show its dependence with the filling factor ν.

  7. Anomalous Hall effect in epitaxial permalloy thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Y. Q.; Sun, N. Y.; Shan, R.

    2013-10-28

    Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jump contributions) of the anomalous Hall conductivity (AHC) is found to be much smaller than those of Fe and Ni films. Band theoretical calculations of the intrinsic AHC as a function of the number of valence electrons (band filling) indicate that the AHC of the permalloy is in the vicinity of sign change, thus resulting in the smallness of the intrinsic AHC. The contribution of the phonon scattering is found to be comparablemore » to that of the impurity scattering. This work suggests that the permalloy films are ideal systems to understand the AHE mechanisms induced by impurity scattering.« less

  8. Automated High-Temperature Hall-Effect Apparatus

    NASA Technical Reports Server (NTRS)

    Parker, James B.; Zoltan, Leslie D.

    1992-01-01

    Automated apparatus takes Hall-effect measurements of specimens of thermoelectric materials at temperatures from ambient to 1,200 K using computer control to obtain better resolution of data and more data points about three times as fast as before. Four-probe electrical-resistance measurements taken in 12 electrical and 2 magnetic orientations to characterize specimens at each temperature. Computer acquires data, and controls apparatus via three feedback loops: one for temperature, one for magnetic field, and one for electrical-potential data.

  9. Mode transition of a Hall thruster discharge plasma

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hara, Kentaro, E-mail: kenhara@umich.edu; Sekerak, Michael J., E-mail: msekerak@umich.edu; Boyd, Iain D.

    2014-05-28

    A Hall thruster is a cross-field plasma device used for spacecraft propulsion. An important unresolved issue in the development of Hall thrusters concerns the effect of discharge oscillations in the range of 10–30 kHz on their performance. The use of a high speed Langmuir probe system and ultra-fast imaging of the discharge plasma of a Hall thruster suggests that the discharge oscillation mode, often called the breathing mode, is strongly correlated to an axial global ionization mode. Stabilization of the global oscillation mode is achieved as the magnetic field is increased and azimuthally rotating spokes are observed. A hybrid-direct kinetic simulationmore » that takes into account the transport of electronically excited atoms is used to model the discharge plasma of a Hall thruster. The predicted mode transition agrees with experiments in terms of the mean discharge current, the amplitude of discharge current oscillation, and the breathing mode frequency. It is observed that the stabilization of the global oscillation mode is associated with reduced electron transport that suppresses the ionization process inside the channel. As the Joule heating balances the other loss terms including the effects of wall loss and inelastic collisions, the ionization oscillation is damped, and the discharge oscillation stabilizes. A wide range of the stable operation is supported by the formation of a space charge saturated sheath that stabilizes the electron axial drift and balances the Joule heating as the magnetic field increases. Finally, it is indicated from the numerical results that there is a strong correlation between the emitted light intensity and the discharge current.« less

  10. Interaction-induced interference in the integer quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Sivan, I.; Bhattacharyya, R.; Choi, H. K.; Heiblum, M.; Feldman, D. E.; Mahalu, D.; Umansky, V.

    2018-03-01

    In recent interference experiments with an electronic Fabry-Pérot interferometer (FPI), implemented in the integer quantum Hall effect regime, a flux periodicity of h /2 e was observed at bulk fillings νB>2.5 . The halved periodicity was accompanied by an interfering charge e*=2 e , determined by shot-noise measurements. Here, we present measurements demonstrating that, counterintuitively, the coherence and the interference periodicity of the interfering chiral edge channel are solely determined by the coherence and the enclosed flux of the adjacent edge channel. Our results elucidate the important role of the latter and suggest that a neutral chiral edge mode plays a crucial role in the pairing phenomenon. Our findings reveal that the observed pairing of electrons is not a curious isolated phenomenon, but one of many manifestations of unexpected edge physics in the quantum Hall effect regime.

  11. Introduction of Shear-Based Transport Mechanisms in Radial-Axial Hybrid Hall Thruster Simulations

    NASA Astrophysics Data System (ADS)

    Scharfe, Michelle; Gascon, Nicolas; Scharfe, David; Cappelli, Mark; Fernandez, Eduardo

    2007-11-01

    Electron diffusion across magnetic field lines in Hall effect thrusters is experimentally observed to be higher than predicted by classical diffusion theory. Motivated by theoretical work for fusion applications and experimental measurements of Hall thrusters, numerical models for the electron transport are implemented in radial-axial hybrid simulations in order to compute the electron mobility using simulated plasma properties and fitting parameters. These models relate the cross-field transport to the imposed magnetic field distribution through shear suppression of turbulence-enhanced transport. While azimuthal waves likely enhance cross field mobility, axial shear in the electron fluid may reduce transport due to a reduction in turbulence amplitudes and modification of phase shifts between fluctuating properties. The sensitivity of the simulation results to the fitting parameters is evaluated and an examination is made of the transportability of these parameters to several Hall thruster devices.

  12. Effects of an Internally-Mounted Cathode on Hall Thruster Plume Properties

    NASA Technical Reports Server (NTRS)

    Hofer, Richard R.; Johnson, Lee K.; Goebel, Dan M.; Fitzgerald, Dennis J.

    2006-01-01

    The effects of cathode position on the plume properties of an 8 kW BHT-8000 Busek Hall thruster are discussed. Experiments were conducted at the Jet Propulsion Laboratory (JPL) in a vacuum chamber suitable for the development and qualification of high-power Hall thrusters. Multi-mode Hall thruster operation was demonstrated at operating conditions ranging from 200-500 V discharge voltage, 10-40 A discharge current, and 2-8 kW discharge power. Reductions in plume divergence and increased near-field plume symmetries were found to result from the use of an internally-mounted cathode instead of the traditional externally-mounted configuration. High-current hollow cathodes developed at JPL utilizing lanthanum hexaboride (LaB6) emitters were also demonstrated. Discharge currents up to 100 A were achieved with the cathode operating alone and up to 40 A during operation with the Hall thruster. LaB6 cathodes were investigated because of their potential to reduce overall system cost and risk due to less stringent xenon purity and handling requirements.

  13. Semiclassical theory of Hall viscosity

    NASA Astrophysics Data System (ADS)

    Biswas, Rudro

    2014-03-01

    Hall viscosity is an intriguing stress response in quantum Hall systems and is predicted to be observable via the conductivity in an inhomogeneous electric field. This has been studied extensively using a range of techniques, such as adiabatic transport, effective field theories, and Kubo formulae. All of these are, however, agnostic as to the distinction between strongly correlated quantum Hall states and non-interacting ones, where the effect arises due to the fundamental non-commuting nature of velocities and orbit positions in a magnetic field. In this talk I shall develop the semiclassical theory of quantized cyclotron orbits drifting in an applied inhomogeneous electric field and use it to provide a clear physical picture of how single particle properties in a magnetic field contribute to the Hall viscosity-dependence of the conductivity.

  14. Analytical theory and possible detection of the ac quantum spin Hall effect

    DOE PAGES

    Deng, W. Y.; Ren, Y. J.; Lin, Z. X.; ...

    2017-07-11

    Here, we develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

  15. Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang; Zhang, Junwei; Zhao, Yuelei; Wen, Yan; Li, Peng; Zhang, Senfu; He, Xin; Zhang, Junli; Zhang, Xixiang

    2018-05-01

    The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12/n/Fe36/n) n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρxx) increases by 6.4 times and the anomalous Hall resistivity (ρAHE) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.

  16. Mesoscopic spin Hall effect in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Zarbo, Liviu

    The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

  17. Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Peng; Wu, Di; Jiang, Zhengsheng

    2014-02-14

    Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperaturemore » of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.« less

  18. Observation of the quantum Hall effect in δ-doped SrTiO3

    PubMed Central

    Matsubara, Y.; Takahashi, K. S.; Bahramy, M. S.; Kozuka, Y.; Maryenko, D.; Falson, J.; Tsukazaki, A.; Tokura, Y.; Kawasaki, M.

    2016-01-01

    The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems. PMID:27228903

  19. Large anomalous Hall effect in a non-collinear antiferromagnet Mn3Sn at room temperature

    NASA Astrophysics Data System (ADS)

    Higo, Tomoya; Kiyohara, Naoki; Nakatsuji, Satoru

    Recent development in theoretical and experimental studies have provided a framework for understanding the anomalous Hall effect using Berry-phase concepts, and this perspective has led to predictions that, under certain conditions, a large anomalous Hall effect may appear in spin liquids and antiferromagnets. In this talk, we will present experimental results showing that the antiferromagnet Mn3Sn, which has a non-collinear 120-degree spin order, exhibits a large anomalous Hall effect. The magnitude of the Hall conductivity is ~ 20 Ω-1 cm-1 at room temperature and > 100 Ω-1 cm-1 at low temperatures. We found that a main component of the Hall signal, which is nearly independent of a magnetic field and magnetization, can change the sign with the reversal of a small applied field, corresponding to the rotation of the staggered moments of the non-collinear antiferromagnetic spin order which carries a very small net moment of a few of mμB. Supported by PRESTO, JST, and Grants-in-Aid for Program for Advancing Strategic International Networks to Accelerate the Circulation of Talented Researchers (No. R2604) and Scientific Research on Innovative Areas (15H05882 and 15H05883) from JSPS.

  20. Scaling relation of the anomalous Hall effect in (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Glunk, M.; Daeubler, J.; Schoch, W.; Sauer, R.; Limmer, W.

    2009-09-01

    We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σxy(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from σxy(AH)=20Ω-1cm-1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σxy(AH)∝σxx1.6 for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

  1. Hall effect biosensors with ultraclean graphene film for improved sensitivity of label-free DNA detection.

    PubMed

    Loan, Phan Thi Kim; Wu, Dongqin; Ye, Chen; Li, Xiaoqing; Tra, Vu Thanh; Wei, Qiuping; Fu, Li; Yu, Aimin; Li, Lain-Jong; Lin, Cheng-Te

    2018-01-15

    The quality of graphene strongly affects the performance of graphene-based biosensors which are highly demanded for the sensitive and selective detection of biomolecules, such as DNA. This work reported a novel transfer process for preparing a residue-free graphene film using a thin gold supporting layer. A Hall effect device made of this gold-transferred graphene was demonstrated to significantly enhance the sensitivity (≈ 5 times) for hybridization detection, with a linear detection range of 1pM to 100nM for DNA target. Our findings provide an efficient method to boost the sensitivity of graphene-based biosensors for DNA recognition. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. The microwave Hall effect measured using a waveguide tee

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Coppock, J. E.; Anderson, J. R.; Johnson, W. B.

    2016-03-14

    This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phasemore » when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm{sup 2}/(V s).« less

  3. Classical Hall Effect without Magnetic Field

    NASA Astrophysics Data System (ADS)

    Schade, Nicholas; Tao, Chiao-Yu; Schuster, David; Nagel, Sidney

    We show that the sign and density of charge carriers in a material can be obtained without the presence of a magnetic field. This effect, analogous to the classical Hall effect, is due solely to the geometry of the current-carrying wire. When current flows, surface charges along the wire create small electric fields that direct the current to follow the path of the conductor. In a curved wire, the charge carriers must experience a centripetal force, which arises from an electric field perpendicular to the drift velocity. This electric field produces a potential difference between the sides of the wire that depends on the sign and density of the charge carriers. We experimentally investigate circuits made from superconductors or graphene to find evidence for this effect.

  4. Another Nulling Hall-Effect Current-Measuring Circuit

    NASA Technical Reports Server (NTRS)

    Thibodeau, Phillip E.; Sullender, Craig C.

    1993-01-01

    Lightweight, low-power circuit provides noncontact measurement of alternating or direct current of many ampheres in main conductor. Advantages of circuit over other nulling Hall-effect current-measuring circuits is stability and accuracy increased by putting both analog-to-digital and digital-to-analog converters in nulling feedback loop. Converters and rest of circuit designed for operation at sampling rate of 100 kHz, but rate changed to alter time or frequency response of circuit.

  5. Topological Hall Effect from Strong to Weak Coupling

    NASA Astrophysics Data System (ADS)

    Nakazawa, Kazuki; Bibes, Manuel; Kohno, Hiroshi

    2018-03-01

    The topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In this letter, we present a unified treatment in terms of spin gauge field by considering not only the adiabatic (Berry phase) component of the gauge field but also the nonadiabatic component. While only the adiabatic contribution is important in the strong-coupling regime, it is completely canceled by a part of the nonadiabatic contribution in the weak-coupling regime, where the THE is governed by the remaining nonadiabatic terms. We found a new weak-coupling region that cannot be accessed by a simple perturbation theory, where the Hall conductivity is proportional to M, with 2M being the exchange splitting of the electron spectrum.

  6. Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect

    DOE PAGES

    Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

    2015-11-06

    We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y 3Fe 5O 12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc currentmore » through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range in-plane to nearly perpendicular. In conclusion, we find that for magnetic fields that are mostly out-of-plane, an imaginary component of the spin mixing conductance is required to model our data.« less

  7. Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

    DOE PAGES

    Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

    2016-03-07

    In this paper, we investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. Finally, we also suggest that metallic antiferromagnets may be good candidates for the investigationmore » of various unidirectional effects related to novel spin-orbitronics phenomena.« less

  8. Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

    NASA Astrophysics Data System (ADS)

    Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

    Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

  9. Nondestructive hall coefficient measurements using ACPD techniques

    NASA Astrophysics Data System (ADS)

    Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

    2018-04-01

    Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a

  10. Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

    NASA Astrophysics Data System (ADS)

    Tang, Chi; Cheng, Bin; Aldosary, Mohammed; Wang, Zhiyong; Jiang, Zilong; Watanabe, K.; Taniguchi, T.; Bockrath, Marc; Shi, Jing

    2018-02-01

    Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches ¼ of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems.

  11. Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers

    NASA Astrophysics Data System (ADS)

    Meng, K. K.; Zhao, X. P.; Liu, P. F.; Liu, Q.; Wu, Y.; Li, Z. P.; Chen, J. K.; Miao, J.; Xu, X. G.; Zhao, J. H.; Jiang, Y.

    2018-02-01

    We have investigated the topological Hall effect (THE) in MnGa/Pt and MnGa/Ta bilayers induced by the inter- facial Dzyaloshinskii-Moriya interaction (DMI). By varying the growth parameters, we can modulate the domain wall energy, and the largest THE signals are found when the domain wall energy is the smallest. The large topological portion of the Hall signal from the total Hall signal has been extracted in the whole temperature range from 5 to 300 K. These results open up the exploration of the DMI induced magnetic behavior based on the bulk perpendicular magnetic anisotropy materials for fundamental physics and magnetic storage technologies.

  12. Hall effects on peristaltic flow of couple stress fluid in a vertical asymmetric channel

    NASA Astrophysics Data System (ADS)

    Maninaga Kumar, P.; Kavitha, A.; Saravana, R.

    2017-11-01

    The influence of Hall effect on peristaltic transport of a couple stress fluid in a vertical asymmetric channel is examined. The problem is solved under the assumptions of low Reynolds number and long wavelength. The velocity, temperature and concentration are obtained by using analytical solutions. Effect of Hall parameter, couple stress fluid parameter, Froude number, Hartmann number and the phase difference on the pumping characteristics, temperature and concentration are discussed graphically.

  13. Resonant spin Hall effect in two dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Shen, Shun-Qing

    2005-03-01

    Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

  14. Topological phase transitions and quantum Hall effect in the graphene family

    NASA Astrophysics Data System (ADS)

    Ledwith, P.; Kort-Kamp, W. J. M.; Dalvit, D. A. R.

    2018-04-01

    Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.

  15. Reversed Hall effect and plasma conductivity in the presence of charged impurities

    NASA Astrophysics Data System (ADS)

    Yaroshenko, V. V.; Lühr, H.

    2018-01-01

    The Hall conductivity of magnetized plasma can be strongly suppressed by the contribution of negatively charged particulates (referred further as "dust"). Once the charge density accumulated by the dust exceeds a certain threshold, the Hall component becomes negative, providing a reversal in the Hall current. Such an effect is unique for dust-loaded plasmas, and it can hardly be achieved in electronegative plasmas. Further growth of the dust density leads to an increase in both the absolute value of the Hall and Pedersen conductivities, while the field-aligned component is decreased. These modifications enhance the role of transverse electric currents and reduce the anisotropy of a magnetized plasma when loaded with charged impurities. The findings provide an important basis for studying the generation of electric currents and transport phenomena in magnetized plasma systems containing small charged particulates. They can be relevant for a wide range of applications from naturally occurring space plasmas in planetary magnetospheres and astrophysical objects to laboratory dusty plasmas (Magnetized Dusty Plasma Experiment) and to technological and fusion plasmas.

  16. Effects of Hall current and electrical resistivity on the stability of gravitating anisotropic quantum plasma

    NASA Astrophysics Data System (ADS)

    Bhakta, S.; Prajapati, R. P.

    2018-02-01

    The effects of Hall current and finite electrical resistivity are studied on the stability of uniformly rotating and self-gravitating anisotropic quantum plasma. The generalized Ohm's law modified by Hall current and electrical resistivity is used along with the quantum magnetohydrodynamic fluid equations. The general dispersion relation is derived using normal mode analysis and discussed in the parallel and perpendicular propagations. In the parallel propagation, the Jeans instability criterion, expression of critical Jeans wavenumber, and Jeans length are found to be independent of non-ideal effects and uniform rotation but in perpendicular propagation only rotation affects the Jeans instability criterion. The unstable gravitating mode modified by Bohm potential and the stable Alfven mode modified by non-ideal effects are obtained separately. The criterion of firehose instability remains unaffected due to the presence of non-ideal effects. In the perpendicular propagation, finite electrical resistivity and quantum pressure anisotropy modify the dispersion relation, whereas no effect of Hall current was observed in the dispersion characteristics. The Hall current, finite electrical resistivity, rotation, and quantum corrections stabilize the growth rate. The stability of the dynamical system is analyzed using the Routh-Hurwitz criterion.

  17. Quantum Hall effect in epitaxial graphene with permanent magnets.

    PubMed

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  18. Excitons in the Fractional Quantum Hall Effect

    DOE R&D Accomplishments Database

    Laughlin, R. B.

    1984-09-01

    Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.

  19. Skew scattering dominated anomalous Hall effect in Co x (MgO)100-x granular thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang; Wen, Yan; Zhao, Yuelei; Li, Peng; He, Xin; Zhang, Junli; He, Yao; Peng, Yong; Yu, Ronghai; Zhang, Xixiang

    2017-10-01

    We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100 nm-thick thin films of Co x (MgO)100-x with a Co volume fraction of 34  ⩽  x  ⩽  100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity ({{ρ }xx} ) and anomalous Hall resistivity ({{ρ }AHE} ) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of {{ρ }xx} and {{ρ }AHE} respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient ({{R}s} ) and of {{ρ }xx} to log({{R}s})˜ γ log({{ρ }xx}) , we found that our results perfectly fell on a straight line with a slope of γ = 0.97  ±  0.02. This fitting value of γ in {{R}s}\\propto ρ xxγ ~ clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both {{ρ }xx} and {{ρ }AHE} significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, γ   =  0.99  ±  0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scattering of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.

  20. Fractionally charged skyrmions in fractional quantum Hall effect

    DOE PAGES

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; ...

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeemanmore » energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.« less

  1. Anomalous Hall effect scaling in ferromagnetic thin films

    NASA Astrophysics Data System (ADS)

    Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

    2017-10-01

    We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

  2. Fractionally charged skyrmions in fractional quantum Hall effect

    PubMed Central

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-01-01

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region. PMID:26608906

  3. Characteristics and transport effects of the electron drift instability in Hall-effect thrusters

    NASA Astrophysics Data System (ADS)

    Lafleur, T.; Baalrud, S. D.; Chabert, P.

    2017-02-01

    The large electron {E}× {B} drift (relative to the ions) in the azimuthal direction of Hall-effect thrusters is well known to excite a strong instability. In a recent paper (Lafleur et al 2016 Phys. Plasmas 23 053503) we demonstrated that this instability leads to an enhanced electron-ion friction force that increases the electron cross-field mobility to levels similar to those seen experimentally. Here we extend this work by considering in detail the onset criteria for the formation of this instability (both in xenon, and other propellants of interest), and identify a number of important characteristics that it displays within Hall-effect thrusters (HETs): including the appearance of an additional non-dimensionalized scaling parameter (the instability growth-to-convection ratio), which controls the instability evolution and amplitude. We also investigate the effect that the instability has on electron and ion heating in HETs, and show that it leads to an ion rotation in the azimuthal direction that is in agreement with that seen experimentally.

  4. Quasiparticle-mediated spin Hall effect in a superconductor.

    PubMed

    Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

    2015-07-01

    In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

  5. Unconventional topological Hall effect in skyrmion crystals caused by the topology of the lattice

    NASA Astrophysics Data System (ADS)

    Göbel, Börge; Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

    2017-03-01

    The hallmark of a skyrmion crystal (SkX) is the topological Hall effect (THE). In this article we predict and explain an unconventional behavior of the topological Hall conductivity in SkXs. In simple terms, the spin texture of the skyrmions causes an inhomogeneous emergent magnetic field whose associated Lorentz force acts on the electrons. By making the emergent field homogeneous, the THE is mapped onto the quantum Hall effect (QHE). Consequently, each electronic band of the SkX is assigned to a Landau level. This correspondence of THE and QHE allows us to explain the unconventional behavior of the THE of electrons in SkXs. For example, a skyrmion crystal on a triangular lattice exhibits a quantized topological Hall conductivity with steps of 2 .e2/h below and with steps of 1 .e2/h above the van Hove singularity. On top of this, the conductivity shows a prominent sign change at the van Hove singularity. These unconventional features are deeply connected to the topology of the structural lattice.

  6. Topological phase transitions and quantum Hall effect in the graphene family

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

    Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

  7. Topological phase transitions and quantum Hall effect in the graphene family

    DOE PAGES

    Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

    2018-04-15

    Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

  8. Anomalous Hall resistance in bilayer quantum Hall systems

    NASA Astrophysics Data System (ADS)

    Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

    2007-07-01

    We present a microscopic theory of the Hall current in the bilayer quantum Hall system on the basis of noncommutative geometry. By analyzing the Heisenberg equation of motion and the continuity equation of charge, we demonstrate the emergence of the phase current in a system where the interlayer phase coherence develops spontaneously. The phase current arranges itself to minimize the total energy of the system, as it induces certain anomalous behaviors in the Hall current in the counterflow geometry and also in the drag experiment. They explain the recent experimental data for anomalous Hall resistances due to Kellogg [Phys. Rev. Lett. 88, 126804 (2002); 93, 036801 (2004)] and Tutuc [Phys. Rev. Lett. 93, 036802 (2004)] at ν=1 .

  9. 5. View of Community Hall, first floor interior, entrance hall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. View of Community Hall, first floor interior, entrance hall on east side of building, facing southeast. Ticket booth center foreground, stairway to auditorium right foreground. - Community Hall, Rainier Avenue & View Drive, Port Gamble, Kitsap County, WA

  10. High Performance Power Module for Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

    2002-01-01

    Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

  11. Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

    NASA Astrophysics Data System (ADS)

    Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

    2018-01-01

    We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

  12. Integrated Stirling Convertor and Hall Thruster Test Conducted

    NASA Technical Reports Server (NTRS)

    Mason, Lee S.

    2002-01-01

    An important aspect of implementing Stirling Radioisotope Generators on future NASA missions is the integration of the generator and controller with potential spacecraft loads. Some recent studies have indicated that the combination of Stirling Radioisotope Generators and electric propulsion devices offer significant trip time and payload fraction benefits for deep space missions. A test was devised to begin to understand the interactions between Stirling generators and electric thrusters. An electrically heated RG- 350 (350-W output) Stirling convertor, designed and built by Stirling Technology Company of Kennewick, Washington, under a NASA Small Business Innovation Research agreement, was coupled to a 300-W SPT-50 Hall-effect thruster built for NASA by the Moscow Aviation Institute (RIAME). The RG-350 and the SPT-50 shown, were installed in adjacent vacuum chamber ports at NASA Glenn Research Center's Electric Propulsion Laboratory, Vacuum Facility 8. The Stirling electrical controller interfaced directly with the Hall thruster power-processing unit, both of which were located outside of the vacuum chamber. The power-processing unit accepted the 48 Vdc output from the Stirling controller and distributed the power to all the loads of the SPT-50, including the magnets, keeper, heater, and discharge. On February 28, 2001, the Glenn test team successfully operated the Hall-effect thruster with the Stirling convertor. This is the world's first known test of a dynamic power source with electric propulsion. The RG-350 successfully managed the transition from the purely resistive load bank within the Stirling controller to the highly capacitive power-processing unit load. At the time of the demonstration, the Stirling convertor was operating at a hot temperature of 530 C and a cold temperature of -6 C. The linear alternator was producing approximately 250 W at 109 Vac, while the power-processing unit was drawing 175 W at 48 Vdc. The majority of power was delivered to the

  13. Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

    NASA Astrophysics Data System (ADS)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

  14. Noise fluctuations and drive dependence of the skyrmion Hall effect in disordered systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reichhardt, Charles; Olson Reichhardt, Cynthia Jane

    Using a particle-based simulation model, we show that quenched disorder creates a drive-dependent skyrmion Hall effect as measured by the change in the ratiomore » $$R={V}_{\\perp }/{V}_{| | }$$ of the skyrmion velocity perpendicular (V ⊥) and parallel ($${V}_{| | }$$) to an external drive. R is zero at depinning and increases linearly with increasing drive, in agreement with recent experimental observations. At sufficiently high drives where the skyrmions enter a free flow regime, R saturates to the disorder-free limit. In addition, this behavior is robust for a wide range of disorder strengths and intrinsic Hall angle values, and occurs whenever plastic flow is present. For systems with small intrinsic Hall angles, we find that the Hall angle increases linearly with external drive, as also observed in experiment. In the weak pinning regime where the skyrmion lattice depins elastically, R is nonlinear and the net direction of the skyrmion lattice motion can rotate as a function of external drive. We show that the changes in the skyrmion Hall effect correlate with changes in the power spectrum of the skyrmion velocity noise fluctuations. The plastic flow regime is associated with $1/f$ noise, while in the regime in which R has saturated, the noise is white with a weak narrow band signal, and the noise power drops by several orders of magnitude. Finally, at low drives, the velocity noise in the perpendicular and parallel directions is of the same order of magnitude, while at intermediate drives the perpendicular noise fluctuations are much larger.« less

  15. Noise fluctuations and drive dependence of the skyrmion Hall effect in disordered systems

    DOE PAGES

    Reichhardt, Charles; Olson Reichhardt, Cynthia Jane

    2016-09-29

    Using a particle-based simulation model, we show that quenched disorder creates a drive-dependent skyrmion Hall effect as measured by the change in the ratiomore » $$R={V}_{\\perp }/{V}_{| | }$$ of the skyrmion velocity perpendicular (V ⊥) and parallel ($${V}_{| | }$$) to an external drive. R is zero at depinning and increases linearly with increasing drive, in agreement with recent experimental observations. At sufficiently high drives where the skyrmions enter a free flow regime, R saturates to the disorder-free limit. In addition, this behavior is robust for a wide range of disorder strengths and intrinsic Hall angle values, and occurs whenever plastic flow is present. For systems with small intrinsic Hall angles, we find that the Hall angle increases linearly with external drive, as also observed in experiment. In the weak pinning regime where the skyrmion lattice depins elastically, R is nonlinear and the net direction of the skyrmion lattice motion can rotate as a function of external drive. We show that the changes in the skyrmion Hall effect correlate with changes in the power spectrum of the skyrmion velocity noise fluctuations. The plastic flow regime is associated with $1/f$ noise, while in the regime in which R has saturated, the noise is white with a weak narrow band signal, and the noise power drops by several orders of magnitude. Finally, at low drives, the velocity noise in the perpendicular and parallel directions is of the same order of magnitude, while at intermediate drives the perpendicular noise fluctuations are much larger.« less

  16. Covariant Conservation Laws and the Spin Hall Effect in Dirac-Rashba Systems

    NASA Astrophysics Data System (ADS)

    Milletarı, Mirco; Offidani, Manuel; Ferreira, Aires; Raimondi, Roberto

    2017-12-01

    We present a theoretical analysis of two-dimensional Dirac-Rashba systems in the presence of disorder and external perturbations. We unveil a set of exact symmetry relations (Ward identities) that impose strong constraints on the spin dynamics of Dirac fermions subject to proximity-induced interactions. This allows us to demonstrate that an arbitrary dilute concentration of scalar impurities results in the total suppression of nonequilibrium spin Hall currents when only Rashba spin-orbit coupling is present. Remarkably, a finite spin Hall conductivity is restored when the minimal Dirac-Rashba model is supplemented with a spin-valley interaction. The Ward identities provide a systematic way to predict the emergence of the spin Hall effect in a wider class of Dirac-Rashba systems of experimental relevance and represent an important benchmark for testing the validity of numerical methodologies.

  17. Valley-chiral quantum Hall state in graphene superlattice structure

    NASA Astrophysics Data System (ADS)

    Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

    2016-05-01

    We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

  18. Spin-hall-active platinum thin films grown via atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Schlitz, Richard; Amusan, Akinwumi Abimbola; Lammel, Michaela; Schlicht, Stefanie; Tynell, Tommi; Bachmann, Julien; Woltersdorf, Georg; Nielsch, Kornelius; Goennenwein, Sebastian T. B.; Thomas, Andy

    2018-06-01

    We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. To estimate the spin transport parameters, we compare the magnitude of the magnetoresistance in samples with different Pt thicknesses. We check the spin Hall angle and the spin diffusion length of the ALD Pt layers against the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5 nm agrees well with that of platinum thin films reported in the literature, whereas the spin Hall magnetoresistance Δ ρ / ρ = 2.2 × 10 - 5 is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future.

  19. Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

    PubMed

    Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

    2017-04-13

    Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

  20. What do you measure when you measure the Hall effect?

    NASA Astrophysics Data System (ADS)

    Koon, D. W.; Knickerbocker, C. J.

    1993-02-01

    A formalism for calculating the sensitivity of Hall measurements to local inhomogeneities of the sample material or the magnetic field is developed. This Hall weighting function g(x,y) is calculated for various placements of current and voltage probes on square and circular laminar samples. Unlike the resistivity weighting function, it is nonnegative throughout the entire sample, provided all probes lie at the edge of the sample. Singularities arise in the Hall weighting function near the current and voltage probes except in the case where these probes are located at the corners of a square. Implications of the results for cross, clover, and bridge samples, and the implications of our results for metal-insulator transition and quantum Hall studies are discussed.

  1. Modeling a Hall Thruster from Anode to Plume Far Field

    DTIC Science & Technology

    2005-01-01

    Hall thruster simulation capability that begins with propellant injection at the thruster anode, and ends in the plume far field. The development of a comprehensive simulation capability is critical for a number of reasons. The main motivation stems from the need to directly couple simulation of the plasma discharge processes inside the thruster and the transport of the plasma to the plume far field. The simulation strategy will employ two existing codes, one for the Hall thruster device and one for the plume. The coupling will take place in the plume

  2. Hydrodynamic Model for Density Gradients Instability in Hall Plasmas Thrusters

    NASA Astrophysics Data System (ADS)

    Singh, Sukhmander

    2017-10-01

    There is an increasing interest for a correct understanding of purely growing electromagnetic and electrostatic instabilities driven by a plasma gradient in a Hall thruster devices. In Hall thrusters, which are typically operated with xenon, the thrust is provided by the acceleration of ions in the plasma generated in a discharge chamber. The goal of this paper is to study the instabilities due to gradients of plasma density and conditions for the growth rate and real part of the frequency for Hall thruster plasmas. Inhomogeneous plasmas prone a wide class of eigen modes induced by inhomogeneities of plasma density and called drift waves and instabilities. The growth rate of the instability has a dependences on the magnetic field, plasma density, ion temperature and wave numbers and initial drift velocities of the plasma species.

  3. Safety halls--an evaluation.

    PubMed

    Nyberg, Anders; Gregersen, Nils Petter; Nolén, Sixten; Engström, Inger

    2005-01-01

    In most countries, drivers licensing systems usually include teaching some aspects of using safety equipment (e.g., airbags and seat belts). However, there is now evidence worldwide that such education is inadequate, as indicated by, for example, the overrepresentation of young drivers who do not use seat belts. A randomized controlled study was conducted in Sweden to evaluate the effects of visiting a facility known as a "safety hall" in combination with the mandatory skid training. The results were assessed to determine the effects of the knowledge and attitudes of learner drivers in the following subjects: airbags, securing loads, seat belts, sitting posture, speed, and tires. An experimental group and a control group comprising 658 and 668 learners, respectively, answered identical questionnaires on three different occasions (pretest, posttest 1, and posttest 2). The results show that, for most of the topics considered, knowledge and attitudes in both groups were better at posttest 2 than at the pretest, and in general, the best knowledge and attitudes were found in the experimental group. The combined safety/skid training seems to have had the greatest effect on seat belts and loads. The findings also indicate that the safety halls can be further improved to achieve an even better effect. The use of safety halls has improved the knowledge and attitudes of learner drivers concerning several important areas related to traffic safety. Since knowledge and attitudes are important predictors of behavior, implementing safety halls can be expected to lead to improvements, especially regarding the use of safety belts and securing loads.

  4. Performance of a Cylindrical Hall-Effect Thruster Using Permanent Magnets

    NASA Technical Reports Server (NTRS)

    Polzin, Kurt A.; Raitses, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    While annular Hall thrusters can operate at high efficiency at kW power levels, it is difficult to construct one that operates over a broad envelope from 1 kW down to 100 W while maintaining an efficiency of 45-55%. Scaling to low power while holding the main dimensionless parameters constant requires a decrease in the thruster channel size and an increase in the magnetic field strength. Increasing the magnetic field becomes technically challenging since the field can saturate the miniaturized inner components of the magnetic circuit and scaling down the magnetic circuit leaves very little room for magnetic pole pieces and heat shields. In addition, the central magnetic pole piece defining the interior wall of the annular channel can experience excessive heat loads in a miniaturized Hall thruster, with the temperature eventually exceeding the Curie temperature of the material and in extreme circumstances leading to accelerated erosion of the channel wall. An alternative approach is to employ a cylindrical Hall thruster (CHT) geometry. Laboratory model CHTs have operated at power levels ranging from 50 W up to 1 kW. These thrusters exhibit performance characteristics that are comparable to conventional, annular Hall thrusters of similar size. Compared to the annular Hall thruster, the CHTs insulator surface area to discharge chamber volume ratio is lower. Consequently, there is the potential for reduced wall losses in the channel of a CHT, and any reduction in wall losses should translate into lower channel heating rates and reduced erosion, making the CHT geometry promising for low-power applications. This potential for high performance in the low-power regime has served as the impetus for research and development efforts aimed at understanding and improving CHT performance. Recently, a 2.6 cm channel diameter permanent magnet CHT (shown in Fig. 1) was tested. This thruster has the promise of reduced power consumption over previous CHT iterations that employed

  5. Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

    NASA Astrophysics Data System (ADS)

    Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

    2018-05-01

    We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

  6. Spin injection and detection via the anomalous spin Hall effect of a ferromagnetic metal

    NASA Astrophysics Data System (ADS)

    Das, K. S.; Schoemaker, W. Y.; van Wees, B. J.; Vera-Marun, I. J.

    2017-12-01

    We report a spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator (yttrium iron garnet) in a nonlocal geometry. Our experiments reveal that permalloy has a comparable spin injection and detection efficiency to that of platinum, owing to the ASHE. We also demonstrate the tunability of the ASHE via the orientation of the permalloy magnetization, thus creating possibilities for spintronic applications.

  7. Temperature Dependent Resistivity and Hall Effect in Proton Irradiated CdS Thin Films

    NASA Astrophysics Data System (ADS)

    Guster, B.; Ghenescu, V.; Ion, L.; Radu, A.; Porumb, O.; Antohe, S.

    2011-10-01

    Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.

  8. Large thermal Hall effect in a frustrated pyrochlore magnet

    NASA Astrophysics Data System (ADS)

    Hirschberger, Max; Krizan, Jason; Cava, Robert J.; Ong, N. Phuan

    2015-03-01

    In frustrated magnetism, the nature of the ground state and its elementary excitations are a matter of considerable debate. We present a detailed study of the full thermal conductivity tensor κij, including the Righi-Leduc (or thermal Hall) effect, in single crystals of the frustrated quantum spin-ice pyrochlore Tb2Ti2O7. The off-diagonal response κxy / T is large in this insulating material, despite the absence of itinerant electrons experiencing the Lorentz force. Our experiments over the temperature range of 0 . 8 - 200 K and in fields up to 14 T reveal a remarkable phenomenology: A sizeable field-linear Hall effect κxy / T is observed below 100 K, and its slope with respect to magnetic field increases strongly as we cool the sample. We observe significant curvature in the field dependence of κxy / T below 15 K. At the lowest temperatures, both κxx / T and the initial slope limB-->0 [κxy / TB ] are constant in temperature, behavior reminiscent of fermionic heat conduction in dirty metals. Experimental methods and verification of the intrinsic nature of the effect will be discussed. R.J.C. and N.P.O. are supported by a MURI Grant (ARO W911NF-12-1-0461) and by the US National Science Foundation (Grant Number DMR 0819860).

  9. Photonic topological boundary pumping as a probe of 4D quantum Hall physics

    NASA Astrophysics Data System (ADS)

    Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P.; Kraus, Yaacov E.; Rechtsman, Mikael C.

    2018-01-01

    When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

  10. Photonic topological boundary pumping as a probe of 4D quantum Hall physics.

    PubMed

    Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P; Kraus, Yaacov E; Rechtsman, Mikael C

    2018-01-03

    When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

  11. Interaction driven quantum Hall effect in artificially stacked graphene bilayers

    PubMed Central

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

    2016-01-01

    The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

  12. Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

    PubMed

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

    2016-04-21

    The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers.

  13. A Generic Theory of the Integer Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Shen, Yu

    The integer quantum Hall effect (IQHE) is usually modeled by a Galilean or rotationally invariant Hamiltonian. These are not generic symmetries for electrons moving in a crystal background and can potentially confuse non-topological quantities with topological ones and identify otherwise distinct geometrical properties. In this thesis we present a generic theory for the IQHE. First we show that a generic guiding-center coherent state, defined by a natural metric in each Landau level, has the form of an antiholomorphic function times a Gaussian factor. Then by numerically solving the eigenproblem for a quartic Hamiltonian and finding the roots of the antiholomorphic part we are able to define a topological spin sn = n + 1/2 where n is the number of central roots that are enclosed by the semiclassical orbit. We derive a generic formula for the Hall viscosity in the absence of rotational symmetry and show that the previous interpretation of the scalar Hall viscosity as the "intrinsic orbital angular momentum" breaks down since the concept of angular momentum requires the presence of rotational symmetry. We also calculate generic electromagnetic responses and differentiate between universal terms that are diagonal with respect to Landau level index and non-universal terms that depend on inter-Landau-level mixing. We conclude that the generic theory offers a fundamental definition for the topological spin and reveals finer structure in the geometrical properties of the IQHE.

  14. Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

    NASA Astrophysics Data System (ADS)

    Rehman, Majeed Ur; Qiao, Zhenhua

    2018-02-01

    Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.

  15. Anomalous Hall effect assisted by interfacial chemical reaction in perpendicular Co/Pt multilayers

    NASA Astrophysics Data System (ADS)

    Liu, Qian; Jiang, Shaolong; Teng, Jiao

    2018-05-01

    To uncover the underlying mechanism of Mg effect on the improved anomalous Hall effect (AHE) of perpendicular [Pt/Co]3/Mg/HfO2 multilayers, the X-ray photoelectron spectroscopy analysis has been carried out. It is found that Mg interlayer at the Co/HfO2 interface could prevent the Co oxidation to some extent via interfacial chemical reaction. As a result, A large anomalous Hall resistivity (ρAH) is obtained in perpendicular [Pt/Co]3/Mg/HfO2 multilayers, with a maximum ρAH of 3.02 μΩ cm, which is 59% larger than that in Co/Pt multilayers without Mg insertion. This effective modification of the AHE based on interfacial chemical reaction provides a promising pathway for spintronic applications.

  16. Intrinsic superspin Hall current

    NASA Astrophysics Data System (ADS)

    Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

    2017-09-01

    We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

  17. Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

    NASA Astrophysics Data System (ADS)

    Roy, Kuntal

    2017-11-01

    There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

  18. Faraday Probe Analysis, Part 2: Evaluation of Facility Effects on Ion Migration in a Hall Thruster Plume (Preprint)

    DTIC Science & Technology

    2010-02-24

    A nested Faraday probe was designed and fabricated to assess facility effects in a systematic study of ion migration in a Hall thruster plume...Current density distributions were studied at 8, 12, 16, and 20 thruster diameters downstream of the Hall thruster exit plane with four probe configurations...measurements are a significant improvement for comparisons with numerical simulations and investigations of Hall thruster performance.

  19. Disorder effects in the quantum Hall effect of graphene p-n junctions

    NASA Astrophysics Data System (ADS)

    Li, Jian; Shen, Shun-Qing

    2008-11-01

    The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

  20. Spectral Analysis of Non-ideal MRI Modes: The Effect of Hall Diffusion

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mohandas, Gopakumar; Pessah, Martin E., E-mail: gopakumar@nbi.ku.dk, E-mail: mpessah@nbi.ku.dk

    The effect of magnetic field diffusion on the stability of accretion disks is a problem that has attracted considerable interest of late. In particular, the Hall effect has the potential to bring about remarkable changes in the dynamical behavior of disks that are without parallel. In this paper, we conduct a systematic examination of the linear eigenmodes in a weakly magnetized differentially rotating gas with a special focus on Hall diffusion. We first develop a geometrical representation of the eigenmodes and provide a detailed quantitative description of the polarization properties of the oscillatory modes under the combined influence of themore » Coriolis and Hall effects. We also analyze the effects of magnetic diffusion on the structure of the unstable modes and derive analytical expressions for the kinetic and magnetic stresses and energy densities associated with the non-ideal magnetorotational instability (MRI). Our analysis explicitly demonstrates that, if the dissipative effects are relatively weak, the kinetic stresses and energies make up the dominant contribution to the total stress and energy density when the equilibrium angular momentum and magnetic field vectors are anti-parallel. This is in sharp contrast to what is observed in the case of the ideal or dissipative MRI. We conduct shearing box simulations and find very good agreement with the results derived from linear theory. Because the modes under consideration are also exact solutions of the nonlinear equations, the unconventional nature of the kinetic and magnetic stresses may have significant implications for the nonlinear evolution in some regions of protoplanetary disks.« less

  1. Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Siracusano, G., E-mail: giuliosiracusano@gmail.com; Puliafito, V.; Giordano, A.

    2015-05-07

    This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the samemore » for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.« less

  2. Hall effect in Ce/sub 1-x/Y/sub x/Pd/sub 3/ mixed-valence alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fert, A.; Pureur, P.; Hamzic, A.

    Mixed-valence and Kondo lattice systems exhibit large anomalous Hall coefficients with a striking change of sign at low temperature in several systems (CePd/sub 3/, CeCu/sub 6/,..., etc.). We have studied the Hall effect of Ce/sub 1-x/Y/sub x/Pd/sub 3/, in which the substitution of small amounts of Y for Ce prevents the development of coherence at low temperature. We find that the Hall coefficient does not change its sign at low temperature and can be well understood in the one-impurity model of Ramakrishnan, Coleman, and Anderson. We infer that the change of sign observed in CePd/sub 3/ is an effect ofmore » coherence.« less

  3. Gauge Physics of Spin Hall Effect

    PubMed Central

    Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-01-01

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of −, and Rashba heavy hole instead of −. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity. PMID:26689260

  4. A programmable quantum current standard from the Josephson and the quantum Hall effects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Poirier, W., E-mail: wilfrid.poirier@lne.fr; Lafont, F.; Djordjevic, S.

    We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter, and a simplified closure of the quantum metrological triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

  5. Concert hall acoustics

    NASA Astrophysics Data System (ADS)

    Schroeder, Manfred

    2004-05-01

    I will review some work at Bell Laboratories on artificial reverberation and concert hall acoustics including Philharmonic Hall (Lincoln Center for the Performing Arts, New York). I will also touch on sound diffusion by number-theoretic surfaces and the measurement of reverberation time using the music as played in the hall as a ``test'' signal.

  6. Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

    NASA Astrophysics Data System (ADS)

    Hammond, Joseph Wilson

    2000-10-01

    Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from

  7. Pseudospectral Model for Hybrid PIC Hall-effect Thruster Simulation

    DTIC Science & Technology

    2015-07-01

    and Fernandez6 (hybrid- PIC ). This work follows the example of Lam and Fernandez but substitutes a spectral description in the azimuthal direction to...Paper 3. DATES COVERED (From - To) July 2015-July 2015 4. TITLE AND SUBTITLE Pseudospectral model for hybrid PIC Hall-effect thruster simulationect...of a pseudospectral azimuthal-axial hybrid- PIC HET code which is designed to explicitly resolve and filter azimuthal fluctuations in the

  8. Effect of azimuthal diversion rail on an ATON-type Hall thruster

    NASA Astrophysics Data System (ADS)

    Xu, Zhang; Liqiu, Wei; Liang, Han; Yongjie, Ding; Daren, Yu

    2017-03-01

    A newly designed azimuthal diversion rail (ADR) is studied and used to enhance the ionization process in an ATON-type Hall thruster. The diversion rail efficiently reduces the neutral flow axial velocity, and hence, increases the resistance time of atoms in the discharge channel of the Hall thruster. Thrust performances, in terms of thrust, anode efficiency and ion beam divergence, are found to be improved because of the application of the diversion rail, especially at low mass flow rate conditions. Experiment results reveal that the ADR increases the mass utilization under insufficient mass flow rate operating conditions. The design of the ADR broadens the efficient operating range of Hall thrusters and has significant contribution to multi-mode Hall thruster development.

  9. Anomalous Hall effect in semiconductor quantum wells in proximity to chiral p -wave superconductors

    NASA Astrophysics Data System (ADS)

    Yang, F.; Yu, T.; Wu, M. W.

    2018-05-01

    By using the gauge-invariant optical Bloch equation, we perform a microscopic kinetic investigation on the anomalous Hall effect in chiral p -wave superconducting states. Specifically, the intrinsic anomalous Hall conductivity in the absence of the magnetic field is zero as a consequence of Galilean invariance in our description. As for the extrinsic channel, a finite anomalous Hall current is obtained from the impurity scattering with the optically excited normal quasiparticle current even at zero temperature. From our kinetic description, it can be clearly seen that the excited normal quasiparticle current is due to an induced center-of-mass momentum of Cooper pairs through the acceleration driven by ac electric field. For the induced anomalous Hall current, we show that the conventional skew-scattering channel in the linear response makes the dominant contribution in the strong impurity interaction. In this case, our kinetic description as a supplementary viewpoint mostly confirms the results of Kubo formalism in the literature. Nevertheless, in the weak impurity interaction, this skew-scattering channel becomes marginal and we reveal that an induction channel from the Born contribution dominates the anomalous Hall current. This channel, which has long been overlooked in the literature, is due to the particle-hole asymmetry by nonlinear optical excitation. Finally, we study the case in the chiral p -wave superconducting state with a transverse conical magnetization, which breaks the Galilean invariance. In this situation, the intrinsic anomalous Hall conductivity is no longer zero. Comparison of this intrinsic channel with the extrinsic one from impurity scattering is addressed.

  10. Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Yuanjun; Yao, Yingxue; Chen, Lei; Huang, Haoliang; Zhang, Benjian; Lin, Hui; Luo, Zhenlin; Gao, Chen; Lu, Y. L.; Li, Xiaoguang; Xiao, Gang; Feng, Ce; Zhao, Y. G.

    2018-01-01

    Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.

  11. Instabilities and transport in Hall plasmas with ExB drift

    NASA Astrophysics Data System (ADS)

    Smolyakov, Andrei

    2016-10-01

    Low temperature plasma with moderate magnetic field, where the ions are not or just weakly magnetized, i.e. the ion Larmor radius being larger or comparable to the characteristic length scale of interest (e.g. the size ofthe system), have distinctly different properties from strongly magnetized plasmas such as that for fusion applications. Such parameters regimes are generally defined here as Hall plasmas. The natural scale separation between the ion and electron Larmor radii in Hall plasma, further exploited by the application of the external electric field, offers unique applications in various plasma devices for material processing and electric propulsion. Plasmas in such devices are in strongly non-equilibrium state making it prone to a number of instabilities. This talk presents physics description of the dominant unstable modes in ExB Hall plasmas resulting in highly turbulent state with nonlinear coherent structures and anomalous electron current. Since ions are un-magnetized, fundamental instabilities operating in low temperature Hall plasmas are very different from much studied gradients (density, temperature and magnetic field) driven drift-wave turbulence in strongly magnetized plasmas for fusion applications. As a result the nonlinear saturation mechanisms, role of the ExB shear flows are also markedly different in such plasmas. We review the basic instabilities in these plasmas which are related to the ion-sound, low-hybrid and anti-drift modes, discuss nonlinear saturation and anomalous transport mechanisms. The advanced nonlinear fluid model for such plasmas and results of nonlinear simulations of turbulence and anomalous transport performed within a modified BOUT++ framework will be presented. Research supported by NSERC Canada and US AFOSR FA9550-15-1-0226.

  12. Fractional quantum Hall effect in strained graphene: Stability of Laughlin states in disordered pseudomagnetic fields

    NASA Astrophysics Data System (ADS)

    Bagrov, Andrey A.; Principi, Alessandro; Katsnelson, Mikhail I.

    2017-03-01

    We address the question of the stability of the fractional quantum Hall effect in the presence of pseudomagnetic disorder generated by mechanical deformations of a graphene sheet. Neglecting the potential disorder and taking into account only strain-induced random pseudomagnetic fields, it is possible to write down a Laughlin-like trial ground-state wave function explicitly. Exploiting the Laughlin plasma analogy, we demonstrate that in the case of fluctuating pseudomagnetic fluxes of a relatively small amplitude, the fractional quantum Hall effect is always stable upon the deformations. By contrast, in the case of bubble-induced pseudomagnetic fields in graphene on a substrate (a small number of large fluxes) the disorder can be strong enough to cause a glass transition in the corresponding classical Coulomb plasma, resulting in the destruction of the fractional quantum Hall regime and in a quantum phase transition to a nonergodic state of the lowest Landau level.

  13. Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

    NASA Astrophysics Data System (ADS)

    Shang, T.; Zhan, Q. F.; Ma, L.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Li, H. H.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

    2015-12-01

    We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3Fe5O12 (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

  14. Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain.

    PubMed

    Islam, S K Firoz

    2018-07-11

    The polymorph of 8-Pmmn borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite directions, which manifests itself via the valley dependent Landau levels in presence of an in-plane electric field (Hall field). The valley dependent Landau levels cause valley polarized magnetotransport properties in presence of the Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using linear response theory in low temperature regime. An analytical approximate form of the longitudinal conductivity is also obtained. It is observed that the tilting of the Dirac cones amplifies the frequency of the longitudinal conductivity oscillation (Shubnikov-de Haas). On the other hand, the Hall conductivity exhibits graphene-like plateaus except the appearance of valley dependent steps which are purely attributed to the Hall field induced lifting of the valley degeneracy in the Landau levels. Finally we look into the different cases when the Hall field is applied to the strained borophene and find that valley dependency is fully dominated by strain rather than Hall field. Another noticeable point is that if the real magnetic field is replaced by the strain induced pseudo magnetic field then the electric field looses its ability to cause valley polarized transport.

  15. Quantum Hall effect breakdown in two-dimensional hole gases

    NASA Astrophysics Data System (ADS)

    Eaves, L.; Stoddart, S. T.; Wirtz, R.; Neumann, A. C.; Gallagher, B. L.; Main, P. C.; Henini, M.

    2000-02-01

    The breakdown of dissipationless current flow in the quantum Hall effect is studied for a two-dimensional hole gas at filling factors i=1 and 2. At high currents, the magnetoresistance curves at breakdown exhibit a series of steps accompanied by hysteresis and intermittent noise. These are compared with similar data for electron systems and are discussed in terms of a hydrodynamic model involving inter-Landau level scattering at the sample edge.

  16. g8: Physics with Linearly-Polarized Photons in Hall B of JLab

    NASA Astrophysics Data System (ADS)

    Cole, Philip L.

    2001-11-01

    The set of experiments forming the g8 run in Hall B took place this past summer (6/4/01-8/13/01) in Hall B of Jefferson Lab. These experiments make use of a beam of linearly-polarized photons produced through coherent bremsstrahlung and represent the first time such a probe has been employed at Jefferson Lab. Several new and upgraded Hall-B beamline devices were commissioned prior to the production running of g8. The scientific purpose of g8 is to improve the understanding of the underlying symmetry of the quark degrees of freedom in the nucleon, the nature of the parity exchange between the incident photon and the target nucleon, and the mechanism of associated strangeness production in electromagnetic reactions. With the high-quality beam of the tagged and collimated linearly-polarized photons and the nearly complete angular coverage of the Hall-B spectrometer, we will extract the differential cross sections and polarization observables for the photoproduction of vector mesons and kaons at photon energies ranging between 1.9 and 2.1 GeV. We collected over 1.2 trillion triggers. After data cuts, we expect to have 500 times the world's data set on rhos and omegas produced via a beam of linearly-polarized photons. A report on the results of the commissioning of the beamline devices and the progress of the analysis of the g8 run will be presented.

  17. A free-trailing vane flow direction indicator employing a linear output Hall effect transducer

    NASA Technical Reports Server (NTRS)

    Zell, Peter T.; Mcmahon, Robert D.

    1988-01-01

    The Hall effect vane (HEV) was developed to measure flow angularity in the NASA 40-by-80-foot and 80-by-120-foot wind tunnels. This indicator is capable of sensing flow direction at air speeds from 5 to 300 knots and over a + or - 40 deg angle range with a resolution of 0.1 deg. A free-trailing vane configuration employing a linear output Hall effect transducer as a shaft angle resolver was used. The current configuration of the HEV is designed primarily for wind tunnel calibration testing; however, other potential applications include atmospheric, flight or ground research testing. The HEV met initial design requirements.

  18. Memory and Spin Injection Devices Involving Half Metals

    DOE PAGES

    Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

    2011-01-01

    We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

  19. Group Γ (2) and the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Georgelin, Yvon; Wallet, Jean-Christophe

    1997-02-01

    We analyze the action of the inhomogeneous modular group Γ (2) on the three cusps of its principal fundamental domain in the Poincaré half plane. From this, we obtain an exhaustive classification of the fractional quantum Hall numbers. This classification, in which the integer and the fractional states appear on an equal level, is somehow similar to the one given by Jain. We also present some resulting remarks concerning direct phase transitions between the different quantum Hall states.

  20. Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

    PubMed

    Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

    2012-11-14

    Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

  1. Magnon Hall effect without Dzyaloshinskii-Moriya interaction.

    PubMed

    Owerre, S A

    2017-01-25

    Topological magnon bands and magnon Hall effect in insulating collinear ferromagnets are induced by the Dzyaloshinskii-Moriya interaction (DMI) even at zero magnetic field. In the geometrically frustrated star lattice, a coplanar/noncollinear [Formula: see text] magnetic ordering may be present due to spin frustration. This magnetic structure, however, does not exhibit topological magnon effects even with DMI in contrast to collinear ferromagnets. We show that a magnetic field applied perpendicular to the star plane induces a non-coplanar spin configuration with nonzero spin scalar chirality, which provides topological effects without the need of DMI. The non-coplanar spin texture originates from the topology of the spin configurations and does not need the presence of DMI or magnetic ordering, which suggests that this phenomenon may be present in the chiral spin liquid phases of frustrated magnetic systems. We propose that these anomalous topological magnon effects can be accessible in polymeric iron (III) acetate-a star-lattice antiferromagnet with both spin frustration and long-range magnetic ordering.

  2. Effects of macroscopic inhomogeneities on resistive and Hall measurements on crosses, cloverleafs, and bars

    NASA Astrophysics Data System (ADS)

    Koon, D. W.; Knickerbocker, C. J.

    1996-12-01

    The effect of macroscopic inhomogeneities on resistivity and Hall angle measurements is studied by calculating weighting functions (the relative effect of perturbations in a local transport property on the measured global average for the object) for cross, cloverleaf, and bar-shaped geometries. The ``sweet spot,'' the region in the center of the object that the measurement effectively samples, is smaller for crosses and cloverleafs than for the circles and squares already studied, and smaller for the cloverleaf than for the corresponding cross. Resistivity measurements for crosses and cloverleafs suffer from singularities and negative weighting, which can be eliminated by averaging two independent resistance measurements, as done in the van der Pauw technique. Resistivity and Hall measurements made on sufficiently narrow bars are shown to effectively sample only the region directly between the voltage probes.

  3. Electron-Fluxon Approach to the Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Fujita, Shigeji; Morabito, David; Godoy, Salvador

    2001-04-01

    Experimental data by Willett et al.(R. Willett et al.), Phys. Rev. Lett. 59, 1776 (1987). show that the Hall resistivity ρ_xy at the extreme low temperatures has plateaus at fractional occupation ratios (2D electron density / fluxon density) ν with odd denominators, where the longitudinal resistivity ρ_xx (nearly) vanishes. The plateau heights are quantized in units of h/e^2. Each plateau is material- and shape-independent and indicates the stability of the superconducting state. The same data show that ρ_xy is linear in B at ν=1/2, where ρ_xx has a small dip, indicating a Fermi-liquid-like state with a different kind of stability. We develop a microscopic theory of the quantum Hall effect in analogy with the theory of the high temperature superconductivity, regarding the fluxon as a quantum particle with half spin and zero mass. Each Landau level, E=(N+1/2)hbar ω_0, ω_0=eB/m, has a great degeneracy. Exchange of a longitudinal phonon can generate an attractive transition between the degenerate states. The same exchange can also pair-create electron-fluxon composites, bosonic and fermionic depending on the number of fluxons. The model accounts for the energy gap at each plateau, ensuring the stability of the superconducting state.

  4. Hall effect analysis in irradiated silicon samples with different resistivities

    NASA Astrophysics Data System (ADS)

    Borchi, E.; Bruzzi, M.; Dezillie, B.; Lazanu, S.; Li, Z.; Pirollo, S.

    1999-08-01

    The changes induced by neutron irradiation in n- and p-type silicon samples with starting resistivities from 10 /spl Omega/-cm up to 30 k/spl Omega/-cm, grown using different techniques, as float-zone (FZ), Czochralski (CZ) and epitaxial, have been analyzed by Van der Pauw and Hall effect measurements. Increasing the fluence, each set of samples evolves toward a quasi-intrinsic p-type material. This behavior has been explained in the frame of a two-level model, that considers the introduction during irradiation of mainly two defects. A deep acceptor and a deep donor, probably related to the divacancy and to the C/sub i/O/sub i/ complex, are placed in the upper and lower half of the forbidden gap, respectively. This simple model explains quantitatively the data on resistivity and Hall coefficient of each set of samples up to the fluence of /spl ap/10/sup 14/ n/cm/sup 2/.

  5. Integer, fractional, and anomalous quantum Hall effects explained with Eyring's rate process theory and free volume concept.

    PubMed

    Hao, Tian

    2017-02-22

    The Hall effects, especially the integer, fractional and anomalous quantum Hall effects, have been addressed using Eyring's rate process theory and free volume concept. The basic assumptions are that the conduction process is a common rate controlled "reaction" process that can be described with Eyring's absolute rate process theory; the mobility of electrons should be dependent on the free volume available for conduction electrons. The obtained Hall conductivity is clearly quantized as with prefactors related to both the magnetic flux quantum number and the magnetic quantum number via the azimuthal quantum number, with and without an externally applied magnetic field. This article focuses on two dimensional (2D) systems, but the approaches developed in this article can be extended to 3D systems.

  6. Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Junxue; Yu, Guoqiang; Tang, Chi; Liu, Yizhou; Shi, Zhong; Liu, Yawen; Navabi, Aryan; Aldosary, Mohammed; Shao, Qiming; Wang, Kang L.; Lake, Roger; Shi, Jing

    2017-06-01

    Electrical currents in a magnetic-insulator/heavy-metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy-metal side and spin-orbit torques (SOTs) on the magnetic-insulator side. Within the framework of a pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the fieldlike torque (FLT) to the dampinglike torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or T m3F e5O12/Pt heterostructures with different T m3F e5O12 thicknesses, where T m3F e5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between the measured effective fields of FLT and DLT is at least two times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin-torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic-insulator/heavy-metal heterostructures.

  7. Hall thruster with grooved walls

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li Hong; Ning Zhongxi; Yu Daren

    2013-02-28

    Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less

  8. Hall effects on hydromagnetic free convection flow along a porous flat plate with mass transfer

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Rashid, R. I. M. A.

    1987-01-01

    Effect of Hall current on the unsteady free convection flow of a viscous incompressible and electrically conducting fluid, in presence of foreign gases (such as H2, CO2, H2O, NH3), along an infinite vertical porous flat plate subjected to a transpiration velocity inversely proportional to the square-root of time is investigated in the presence of a uniform transverse magnetic field. The results are discussed with the effects of the parameters Gc (the Grashof number for mass transfer), m (the Hall parameter) and Sc (the Schmidt number) for Pr = 0.71, which represents air.

  9. Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Wang, Ke; Harzheim, Achim; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip

    In the quantum Hall (QH) regime, ballistic conducting paths along the physical edges of a sample appear, leading to quantized Hall conductance and vanishing longitudinal magnetoconductance. These QH edge states are often described as ballistic compressible strips separated by insulating incompressible strips, the spatial profiles of which can be crucial in understanding the stability and emergence of interaction driven QH states. In this work, we present tunneling transport between two QH edge states in bilayer graphene. Employing locally gated device structure, we guide and control the separation between the QH edge states in bilayer graphene. Using resonant Landau level tunneling as a spectroscopy tool, we measure the energy gap in bilayer graphene as a function of displacement field and probe the emergence and evolution of incompressible strips.

  10. The spin-Hall effect and spin-orbit torques in epitaxial Co2FeAl/platinum bilayers

    NASA Astrophysics Data System (ADS)

    Peterson, T. A.; Liu, C.; McFadden, T.; Palmstrøm, C. J.; Crowell, P. A.

    We have performed magnetoresistance measurements on epitaxially grown Co2FeAl/platinum (CFA/Pt) ultrathin ferromagnet/heavy metal bilayers to study the spin-Hall effect in Pt and the accompanying spin-orbit torque (SOT) exerted on the magnetic CFA layer. Specifically, we measure the spin-Hall magnetoresistance in the Pt layer by changing the orientation of the CFA magnetization with respect to the spin current orientation created in the Pt, and we determine the SOT efficiency using a second-harmonic detection technique. Because the latter of the two measurements is proportional to the spin-Hall ratio θSHE while the former is proportional to θSHE2, we are able to extract the bare Pt spin-Hall ratio with no assumptions about the CFA/Pt interface spin mixing conductance. Furthermore, by varying the Pt thickness we show that the results are consistent with resistivity-independent spin-Hall conductivity. Finally, the two measurements in combination allow us to infer a spin-mixing conductance at the CFA/Pt interface of 2 +/- 1 ×1015Ω-1m-2 . The combination of spin-Hall magnetoresistance and SOT measurements allows for a determination of the spin-mixing conductance using only low-frequency transport techniques. This work was supported by STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  11. CMOS-compatible spintronic devices: a review

    NASA Astrophysics Data System (ADS)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  12. Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

    PubMed

    Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

    2011-12-20

    Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

  13. Establishment of a Hall Thruster Cluster

    DTIC Science & Technology

    2004-02-01

    DURIP funds were used to develop a Hall thruster cluster test facility centered around the University of Michigan Large Vacuum Test Facility and a 2x2 cluster of BUSEK 600 W BHT-600 Hall thrusters. This capability will facilitate our three-year program to address the issue of high-power CDT operation and to provide insight on how chamber effects influence CDT engine/cluster characteristics.

  14. Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

    NASA Astrophysics Data System (ADS)

    Shang, T.; Yang, H. L.; Zhan, Q. F.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

    2016-10-01

    We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

  15. Magnetic modulation of inverse spin Hall effect in lateral spin-valves

    NASA Astrophysics Data System (ADS)

    Andrianov, T.; Vedyaev, A.; Dieny, B.

    2018-05-01

    We analytically investigated the spin-dependent transport properties in a lateral spin-valve device comprising pinned ferromagnetic electrodes allowing the injection of a spin current in a spin conducting channel where spin orbit scattering takes place. This produces an inverse spin Hall (ISHE) voltage across the thickness of the spin conducting channel. It is shown that by adding an extra soft ferromagnetic electrode with rotatable magnetization along the spin conducting channel, the ISHE generated voltage can be magnetically modulated by changing the magnetization orientation of this additional electrode. The dependence of the ISHE voltage on the direction of magnetization of the ferromagnetic electrode with rotatable magnetization was calculated in various configurations. Our results suggest that such structures could be considered as magnetic field sensors in situations where the total thickness of the sensor is constrained such as in hard disk drive readers.

  16. Manual modification and plasma exposure of boron nitride ceramic to study Hall effect thruster plasma channel material erosion

    NASA Astrophysics Data System (ADS)

    Satonik, Alexander J.

    Worn Hall effect thrusters (HET) show a variety of unique microstructures and elemental compositions in the boron nitride thruster channel walls. Worn thruster channels are typically created by running test thrusters in vacuum chambers for hundreds of hours. Studies were undertaken to manually modify samples of boron nitride without the use of a hall effect thruster. Samples were manually abraded with an abrasive blaster and sandpaper, in addition to a vacuum heater. Some of these samples were further exposed to a xenon plasma in a magnetron sputter device. Sandpaper and abrasive blaster tests were used to modify surface roughness values of the samples from 10,000 A to 150,000 A, matching worn thruster values. Vacuum heat treatments were performed on samples. These treatments showed the ability to modify chemical compositions of boron nitride samples, but not in a manner matching changes seen in worn thruster channels. Plasma erosion rate was shown to depend on the grade of the BN ceramic and the preparation of the surface prior to plasma exposure. Abraded samples were shown to erode 43% more than their pristine counterparts. Unique surface features and elemental compositions on the worn thruster channel samples were overwritten by new surface features on the ceramic grains. The microscope images of the ceramic surface show that the magnetron plasma source rounded the edges of the ceramic grains to closely match the worn HET surface. This effect was not as pronounced in studies of ion beam bombardment of the surface and appears to be a result of the quasi-neutral plasma environment.

  17. Towards Reduced Wall Effect Hall Plasma Accelerators

    DTIC Science & Technology

    2007-07-01

    Unpublished Conference Presentations E. Fernandez, N. Borelli , M. Cappelli, N. Gascon, "Investigation of Fluctuation-Induced Electron Transport in Hall...International Electric Propulsion Conference, Princeton University, October 31 November 4, 2005. 38. E. Fernandez, N. Borelli , M. Cappelli, N. Gascon

  18. Nonequilibrium Hall Response After a Topological Quench

    NASA Astrophysics Data System (ADS)

    Unal, F. Nur; Mueller, Erich; Oktel, M. O.

    2017-04-01

    We theoretically study the Hall response of a lattice system following a quench where the topology of a filled band is suddenly changed. In the limit where the physics is dominated by a single Dirac cone, we find that the change in the Hall conductivity is two-thirds of the quantum of conductivity. We explore this universal behavior in the Haldane model, and discuss cold-atom experiments for its observation. Beyond linear response, the Hall effect crosses over from fractional to integer values. We investigate finite-size effects, and the role of the harmonic confinement. Furthermore, we explore the magnetic field quenches in ladders formed in synthetic dimensions. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

  19. Coriolis effect in optics: unified geometric phase and spin-Hall effect.

    PubMed

    Bliokh, Konstantin Y; Gorodetski, Yuri; Kleiner, Vladimir; Hasman, Erez

    2008-07-18

    We examine the spin-orbit coupling effects that appear when a wave carrying intrinsic angular momentum interacts with a medium. The Berry phase is shown to be a manifestation of the Coriolis effect in a noninertial reference frame attached to the wave. In the most general case, when both the direction of propagation and the state of the wave are varied, the phase is given by a simple expression that unifies the spin redirection Berry phase and the Pancharatnam-Berry phase. The theory is supported by the experiment demonstrating the spin-orbit coupling of electromagnetic waves via a surface plasmon nanostructure. The measurements verify the unified geometric phase, demonstrated by the observed polarization-dependent shift (spin-Hall effect) of the waves.

  20. Numerical Study of Current Driven Instabilities and Anomalous Electron Transport in Hall-effect Thrusters

    NASA Astrophysics Data System (ADS)

    Tran, Jonathan

    Plasma turbulence and the resulting anomalous electron transport due to azimuthal current driven instabilities in Hall-effect thrusters is a promising candidate for developing predictive models for the observed anomalous transport. A theory for anomalous electron transport and current driven instabilities has been recently studied by [Lafluer et al., 2016a]. Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster modeling. Using a reduced dimension particle in cell simulation implemented in the Thermophysics Universal Research Framework developed by the Air Force Research Lab, we show collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field and the plasma density. These high-frequency and short wavelength fluctuations can lead to an effective cross-field mobility many orders of magnitude larger than what is expected from classical electron-neutral momentum collisions in the low neutral density regime. We further adapt the previous study by [Lampe et al., 1971] and [Stringer, 1964] for related current driven instabilities to electric propulsion relevant mass ratios and conditions. Finally, we conduct a preliminary study of resolving this instability with a modified hybrid simulation with the hope of integration with established hybrid Hall-effect thruster simulations.

  1. Magnetic field evolution in white dwarfs: The hall effect and complexity of the field

    NASA Technical Reports Server (NTRS)

    Muslimov, A. G.; Van Horn, H. M.; Wood, M. A.

    1995-01-01

    We calculate the evolution of the magnetic fields in white dwarfs, taking into account the Hall effect. Because this effect depends nonlinearly upon the magnetic field strength B, the time dependences of the various multipole field components are coupled. The evolution of the field is thus significantly more complicated than has been indicated by previous investigations. Our calculations employ recent white dwarf evolutionary sequences computed for stars with masses 0.4, 0.6, 0.8, and 1.0 solar mass. We show that in the presence of a strong (up to approximately 10(exp 9) G) internal toroidal magnetic field; the evolution of even the lowest order poloidal modes can be substantially changed by the Hall effect. As an example, we compute the evolution of an initially weak quadrupole component, which we take arbitrarily to be approximately 0.1%-1% of the strength of a dominant dipole field. We find that coupling provided by the Hall effect can produce growth of the ratio of the quadrupole to the dipole component of the surface value of the magnetic field strength by more than a factor of 10 over the 10(exp 9) to 10(exp 10) year cooling lifetime of the white dwarf. Some consequences of these results for the process of magnetic-field evolution in white dwarfs are briefly discussed.

  2. Real-space and reciprocal-space Berry phases in the Hall effect of Mn(1-x)Fe(x)Si.

    PubMed

    Franz, C; Freimuth, F; Bauer, A; Ritz, R; Schnarr, C; Duvinage, C; Adams, T; Blügel, S; Rosch, A; Mokrousov, Y; Pfleiderer, C

    2014-05-09

    We report an experimental and computational study of the Hall effect in Mn(1-x)Fe(x)Si, as complemented by measurements in Mn(1-x)Co(x)Si, when helimagnetic order is suppressed under substitutional doping. For small x the anomalous Hall effect (AHE) and the topological Hall effect (THE) change sign. Under larger doping the AHE remains small and consistent with the magnetization, while the THE grows by over a factor of 10. Both the sign and the magnitude of the AHE and the THE are in excellent agreement with calculations based on density functional theory. Our study provides the long-sought material-specific microscopic justification that, while the AHE is due to the reciprocal-space Berry curvature, the THE originates in real-space Berry phases.

  3. Results and comparison of Hall and DW duct experiments

    NASA Technical Reports Server (NTRS)

    Smith, J. M.; Morgan, J. L.

    1982-01-01

    Experimental data from recent tests of a 45 deg diagonal wall duct are presented and compared with the results of a similar Hall duct. It is shown that while the peak power density of the two devices is approximately equal that the diagonal wall duct produces greater total power output due to its ability to better utilize the available magnetic field.

  4. Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

    2017-07-01

    We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

  5. Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

    DTIC Science & Technology

    2015-11-19

    Shriram Ramanathan HARVARD COLLEGE PRESIDENT & FELLOWS OF Final Report 11/19/2015 DISTRIBUTION A: Distribution approved for public release. AF Office... Harvard University 29 Oxford St, Pierce Hall, Cambridge, MA 02138 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING/MONITORING AGENCY NAME(S...characterization of correlated oxide field effect switching devices for  high speed electronics  PI: Shriram Ramanathan,  Harvard  University  AFOSR Grant FA9550‐12‐1

  6. Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

    PubMed

    Mani, Arjun; Benjamin, Colin

    2016-04-13

    On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

  7. Satellite propulsion spectral signature detection and analysis through Hall effect thruster plume and atmospheric modeling

    NASA Astrophysics Data System (ADS)

    Wheeler, Pamela; Cobb, Richard; Hartsfield, Carl; Prince, Benjamin

    2016-09-01

    Space Situational Awareness (SSA) is of utmost importance in today's congested and contested space environment. Satellites must perform orbital corrections for station keeping, devices like high efficiency electric propulsion systems such as a Hall effect thrusters (HETs) to accomplish this are on the rise. The health of this system is extremely important to ensure the satellite can maintain proper position and perform its intended mission. Electron temperature is a commonly used diagnostic to determine the efficiency of a hall thruster. Recent papers have coordinated near infrared (NIR) spectral measurements of emission lines in xenon and krypton to electron temperature measurements. Ground based observations of these spectral lines could allow the health of the thruster to be determined while the satellite is in operation. Another issue worth considering is the availability of SSA assets for ground-based observations. The current SSA architecture is limited and task saturated. If smaller telescopes, like those at universities, could successfully detect these signatures they could augment data collection for the SSA network. To facilitate this, precise atmospheric modeling must be used to pull out the signature. Within the atmosphere, the NIR has a higher transmission ratio and typical HET propellants are approximately 3x the intensity in the NIR versus the visible spectrum making it ideal for ground based observations. The proposed research will focus on developing a model to determine xenon and krypton signatures through the atmosphere and estimate the efficacy through ground-based observations. The model will take power modes, orbit geometries, and satellite altitudes into consideration and be correlated with lab and field observations.

  8. Coriolis effect and spin Hall effect of light in an inhomogeneous chiral medium.

    PubMed

    Zhang, Yongliang; Shi, Lina; Xie, Changqing

    2016-07-01

    We theoretically investigate the spin Hall effect of spinning light in an inhomogeneous chiral medium. The Hamiltonian equations of the photon are analytically obtained within eikonal approximation in the noninertial orthogonal frame. Besides the usual spin curvature coupling, the chiral parameter enters the Hamiltonian as a spin-torsion-like interaction. We reveal that both terms have parallel geometric origins as the Coriolis terms of Maxwell's equations in nontrivial frames.

  9. Diagnostics Systems for Permanent Hall Thrusters Development

    NASA Astrophysics Data System (ADS)

    Ferreira, Jose Leonardo; Soares Ferreira, Ivan; Santos, Jean; Miranda, Rodrigo; Possa, M. Gabriela

    This work describes the development of Permanent Magnet Hall Effect Plasma Thruster (PHALL) and its diagnostic systems at The Plasma Physics Laboratory of University of Brasilia. The project consists on the construction and characterization of plasma propulsion engines based on the Hall Effect. Electric thrusters have been employed in over 220 successful space missions. Two types stand out: the Hall-Effect Thruster (HET) and the Gridded Ion Engine (GIE). The first, which we deal with in this project, has the advantage of greater simplicity of operation, a smaller weight for the propulsion subsystem and a longer shelf life. It can operate in two configurations: magnetic layer and anode layer, the difference between the two lying in the positioning of the anode inside the plasma channel. A Hall-Effect Thruster-HET is a type of plasma thruster in which the propellant gas is ionized and accelerated by a magneto hydrodynamic effect combined with electrostatic ion acceleration. So the essential operating principle of the HET is that it uses a J x B force and an electrostatic potential to accelerate ions up to high speeds. In a HET, the attractive negative charge is provided by electrons at the open end of the Thruster instead of a grid, as in the case of the electrostatic ion thrusters. A strong radial magnetic field is used to hold the electrons in place, with the combination of the magnetic field and the electrostatic potential force generating a fast circulating electron current, the Hall current, around the axis of the Thruster, mainly composed by drifting electrons in an ion plasma background. Only a slow axial drift towards the anode occurs. The main attractive features of the Hall-Effect Thruster are its simple design and operating principles. Most of the Hall-Effect Thrusters use electromagnet coils to produce the main magnetic field responsible for plasma generation and acceleration. In this paper we present a different new concept, a Permanent Magnet Hall-Effect

  10. Low operational current spin Hall nano-oscillators based on NiFe/W bilayers

    NASA Astrophysics Data System (ADS)

    Mazraati, Hamid; Chung, Sunjae; Houshang, Afshin; Dvornik, Mykola; Piazza, Luca; Qejvanaj, Fatjon; Jiang, Sheng; Le, Tuan Q.; Weissenrieder, Jonas; Åkerman, Johan

    2016-12-01

    We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/β-W bilayers. Thanks to the very high spin Hall angle of β-W, we achieve more than a 60% reduction in the auto-oscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our results provide a promising path for the realization of low-current SHNO microwave devices with highly efficient spin-orbit torque from β-W.

  11. Facility Focus: Residence Halls.

    ERIC Educational Resources Information Center

    College Planning & Management, 2002

    2002-01-01

    Describes residence halls seeking to meet needs beyond traditional mass housing for the 18- to 22-year-old students: Whittemore Hall at the Tuck School of Business at Dartmouth College (for older students); Small Group Housing at Washington University (grouping students with common interests); and the renovation of the residence hall at Boston's…

  12. Development and control of a magnetorheological haptic device for robot assisted surgery.

    PubMed

    Shokrollahi, Elnaz; Goldenberg, Andrew A; Drake, James M; Eastwood, Kyle W; Kang, Matthew

    2017-07-01

    A prototype magnetorheological (MR) fluid-based actuator has been designed for tele-robotic surgical applications. This device is capable of generating forces up to 47 N, with input currents ranging from 0 to 1.5 A. We begin by outlining the physical design of the device, and then discuss a novel nonlinear model of the device's behavior. The model was developed using the Hammerstein-Wiener (H-W) nonlinear black-box technique and is intended to accurately capture the hysteresis behavior of the MR-fluid. Several experiments were conducted on the device to collect estimation and validation datasets to construct the model and assess its performance. Different estimating functions were used to construct the model, and their effectiveness is assessed based on goodness-of-fit and final-prediction-error measurements. A sigmoid network was found to have a goodness-of-fit of 95%. The model estimate was then used to tune a PID controller. Two control schemes were proposed to eliminate the hysteresis behavior present in the MR fluid device. One method uses a traditional force feedback control loop and the other is based on measuring the magnetic field using a Hall-effect sensor embedded within the device. The Hall-effect sensor scheme was found to be superior in terms of cost, simplicity and real-time control performance compared to the force control strategy.

  13. Design and Implementation of a Hall Effect Sensor Array Applied to Recycling Hard Drive Magnets

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kisner, Roger; Lenarduzzi, Roberto; Killough, Stephen M

    Rare earths are an important resource for many electronic components and technologies. Examples abound including Neodymium magnets used in mobile devices and computer hard drives (HDDs), and a variety of renewable energy technologies (e.g., wind turbines). Approximately 21,000 metric tons of Neodymium is processed annually with less than 1% being recycled. An economic system to assist in the recycling of magnet material from post-consumer goods, such as Neodymium Iron Boron magnets commonly found in hard drives is presented. A central component of this recycling measurement system uses an array of 128 Hall Effect sensors arranged in two columns to detectmore » the magnetic flux lines orthogonal to the HDD. Results of using the system to scan planar shaped objects such as hard drives to identify and spatially locate rare-earth magnets for removal and recycling from HDDs are presented. Applications of the sensor array in other identification and localization of magnetic components and assemblies will be presented.« less

  14. Current-driven dynamics of skyrmions stabilized in MnSi nanowires revealed by topological Hall effect

    PubMed Central

    Liang, Dong; DeGrave, John P.; Stolt, Matthew J.; Tokura, Yoshinori; Jin, Song

    2015-01-01

    Skyrmions hold promise for next-generation magnetic storage as their nanoscale dimensions may enable high information storage density and their low threshold for current-driven motion may enable ultra-low energy consumption. Skyrmion-hosting nanowires not only serve as a natural platform for magnetic racetrack memory devices but also stabilize skyrmions. Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. THE is observed in an extended magnetic field-temperature window (15–30 K), suggesting stabilization of skyrmions in nanowires compared with the bulk. Furthermore, we show in nanowires that under the high current density of 108–109 A m−2, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field in the extended skyrmion phase region. These results open up the exploration of skyrmions in nanowires for fundamental physics and magnetic storage technologies. PMID:26400204

  15. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Scott D. Altman, second from left, is inducted into the Astronaut Hall of Fame (AHOF) during a ceremony inside the Space Shuttle Atlantis attraction at NASA's Kennedy Space Center Visitor Complex in Florida. At far left, Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation (ASF), inducts Altman into the Hall of Fame Class of 2018. At right is Hall of Famer John Grunsfeld, who spoke on Altman's behalf during the ceremony. At far right is Thomas D. Jones, Ph.D., who also was inducted into the AHOF Class of 2018. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  16. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Thomas D. Jones, Ph.D., in the center, is inducted into the Astronaut Hall of Fame (AHOF) during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. At left, Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation (ASF), inducts Jones into the Hall of Fame Class of 2018. At right is Hall of Famer Storey Musgrave, who spoke on Jones behalf during the ceremony. Also inducted was retired astronaut Scott D. Altman. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  17. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    NASA Astrophysics Data System (ADS)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  18. NASA's 2004 Hall Thruster Program

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

    2004-01-01

    An overview of NASA's Hall thruster research and development tasks conducted during fiscal year 2004 is presented. These tasks focus on: raising the technology readiness level of high power Hall thrusters, developing a moderate-power/ moderate specific impulse Hall thruster, demonstrating high-power/high specific impulse Hall thruster operation, and addressing the fundamental technical challenges of emerging Hall thruster concepts. Programmatic background information, technical accomplishments and out year plans for each program element performed under the sponsorship of the In-Space Transportation Program, Project Prometheus, and the Energetics Project are provided.

  19. Two-component quantum Hall effects in topological flat bands

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zeng, Tian-Sheng; Zhu, Wei; Sheng, D. N.

    2017-03-27

    Here in this paper, we study quantum Hall states for two-component particles (hardcore bosons and fermions) loading in topological lattice models. By tuning the interplay of interspecies and intraspecies interactions, we demonstrate that two-component fractional quantum Hall states emerge at certain fractional filling factors ν = 1/2 for fermions (ν = 2/3 for bosons) in the lowest Chern band, classified by features from ground states including the unique Chern number matrix (inverse of the K matrix), the fractional charge and spin pumpings, and two parallel propagating edge modes. Moreover, we also apply our strategy to two-component fermions at integer fillingmore » factor ν = 2 , where a possible topological Neel antiferromagnetic phase is under intense debate very recently. For the typical π -flux checkerboard lattice, by tuning the onsite Hubbard repulsion, we establish a first-order phase transition directly from a two-component fermionic ν = 2 quantum Hall state at weak interaction to a topologically trivial antiferromagnetic insulator at strong interaction, and therefore exclude the possibility of an intermediate topological phase for our system.« less

  20. Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films

    NASA Astrophysics Data System (ADS)

    Garcia, W. J. S.; Seeger, R. L.; da Silva, R. B.; Harres, A.

    2017-11-01

    Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually non-magnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions.The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field.

  1. Hall effect and fine structures in magnetic reconnection with high plasma {beta}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jin, S.P.; Yang, H.A.; Wang, X.G.

    2005-04-15

    Magnetic reconnection with various plasma {beta} (the ratio of plasma pressure to the magnetic pressure) is studied numerically using a 2.5 dimensional Hall magnetohydrodynamics (MHD) code developed from a multistep implicit scheme. The initial state of the Hall MHD simulation is an equilibrium Harris sheet with L{sub c}=0.5d{sub i} (where L{sub c} is the half-width of the equilibrium current layer and d{sub i} is the ion inertial length) and a zero guide field (i.e., B{sub y0}=0 at t=0). Driven by a constant boundary inflow a quasisteady fast reconnection occurs in the plasma with a low uniform resistivity. The out-of-plane magneticmore » field component B{sub y} is then spontaneously generated and its quadrupolar structure is shown around the X point. It is demonstrated by the comparing studies that the reconnection dynamics is controlled by the Hall effect and the effect of scalar electron pressure gradient is negligible in the generalized Ohm's law. It is also found that the openness of the magnetic separatrix angle and associated quadrupolar B{sub y} structure is enlarged as {beta} increases. When {beta}>2.0 fine structures of B{sub y} contours with reversed sign emerge. The numerical results indicate that the variations in electron velocity V{sub e} are greater than those in ion velocity V{sub i} and the decoupling of electron and ion occurs in larger scale lengths than d{sub i} as {beta} increases. Clearly, the reserve current, which is associated with the relative motion between electrons and ions, generates the fine structures of B{sub y} contours in the outflow region. Then the corresponding profile of B{sub y} component exhibits a static whistler wave signature. Enhanced wave activities observed during a Cluster crossing of the high-{beta} exterior cusp region [Y. Khotyaintsev, A. Vaivads, Y. Ogawa, B. Popielawska, M. Andre, S. Buchert, P. Decreau, B. Lavraud, and H. Reme, Ann. Geophys. 22, 2403 (2004)] might be related to the Hall effects of magnetic

  2. Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB 4

    DOE PAGES

    Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; ...

    2016-05-11

    We study TmB 4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. In conclusion, we propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

  3. Quantum hall ferromagnets

    NASA Astrophysics Data System (ADS)

    Kumar, Akshay

    We study several quantum phases that are related to the quantum Hall effect. Our initial focus is on a pair of quantum Hall ferromagnets where the quantum Hall ordering occurs simultaneously with a spontaneous breaking of an internal symmetry associated with a semiconductor valley index. In our first example ---AlAs heterostructures--- we study domain wall structure, role of random-field disorder and dipole moment physics. Then in the second example ---Si(111)--- we show that symmetry breaking near several integer filling fractions involves a combination of selection by thermal fluctuations known as "order by disorder" and a selection by the energetics of Skyrme lattices induced by moving away from the commensurate fillings, a mechanism we term "order by doping". We also study ground state of such systems near filling factor one in the absence of valley Zeeman energy. We show that even though the lowest energy charged excitations are charge one skyrmions, the lowest energy skyrmion lattice has charge > 1 per unit cell. We then broaden our discussion to include lattice systems having multiple Chern number bands. We find analogs of quantum Hall ferromagnets in the menagerie of fractional Chern insulator phases. Unlike in the AlAs system, here the domain walls come naturally with gapped electronic excitations. We close with a result involving only topology: we show that ABC stacked multilayer graphene placed on boron nitride substrate has flat bands with non-zero local Berry curvature but zero Chern number. This allows access to an interaction dominated system with a non-trivial quantum distance metric but without the extra complication of a non-zero Chern number.

  4. Covariant effective action for a Galilean invariant quantum Hall system

    NASA Astrophysics Data System (ADS)

    Geracie, Michael; Prabhu, Kartik; Roberts, Matthew M.

    2016-09-01

    We construct effective field theories for gapped quantum Hall systems coupled to background geometries with local Galilean invariance i.e. Bargmann spacetimes. Along with an electromagnetic field, these backgrounds include the effects of curved Galilean spacetimes, including torsion and a gravitational field, allowing us to study charge, energy, stress and mass currents within a unified framework. A shift symmetry specific to single constituent theories constraints the effective action to couple to an effective background gauge field and spin connection that is solved for by a self-consistent equation, providing a manifestly covariant extension of Hoyos and Son's improvement terms to arbitrary order in m.

  5. Covariant effective action for a Galilean invariant quantum Hall system

    DOE PAGES

    Geracie, Michael; Prabhu, Kartik; Roberts, Matthew M.

    2016-09-16

    Here, we construct effective field theories for gapped quantum Hall systems coupled to background geometries with local Galilean invariance i.e. Bargmann spacetimes. Along with an electromagnetic field, these backgrounds include the effects of curved Galilean spacetimes, including torsion and a gravitational field, allowing us to study charge, energy, stress and mass currents within a unified framework. A shift symmetry specific to single constituent theories constraints the effective action to couple to an effective background gauge field and spin connection that is solved for by a self-consistent equation, providing a manifestly covariant extension of Hoyos and Son’s improvement terms to arbitrarymore » order in m.« less

  6. Geometrical optics of beams with vortices: Berry phase and orbital angular momentum Hall effect.

    PubMed

    Bliokh, Konstantin Yu

    2006-07-28

    We consider propagation of a paraxial beam carrying the spin angular momentum (polarization) and intrinsic orbital angular momentum (IOAM) in a smoothly inhomogeneous isotropic medium. It is shown that the presence of IOAM can dramatically enhance and rearrange the topological phenomena that previously were considered solely in connection to the polarization of transverse waves. In particular, the appearance of a new type of Berry phase that describes the parallel transport of the beam structure along a curved ray is predicted. We derive the ray equations demonstrating the splitting of beams with different values of IOAM. This is the orbital angular momentum Hall effect, which resembles the Magnus effect for optical vortices. Unlike the spin Hall effect of photons, it can be much larger in magnitude and is inherent to waves of any nature. Experimental means to detect the phenomena are discussed.

  7. Magnon Hall effect on the Lieb lattice.

    PubMed

    Cao, Xiaodong; Chen, Kai; He, Dahai

    2015-04-29

    Ferromagnetic insulators without inversion symmetry may show magnon Hall effect (MHE) in the presence of a temperature gradient due to the existence of Dzyaloshinskii-Moriya interaction (DMI). In this theoretical study, we investigate MHE on a lattice with inversion symmetry, namely the Lieb lattice, where the DMI is introduced by adding an external electric field. We show the nontrivial topology of this model by examining the existence of edge states and computing the topological phase diagram characterized by the Chern numbers of different bands. Together with the topological phase diagram, we can further determine the sign and magnitude of the transverse thermal conductivity. The impact of the flat band possessed by this model on the thermal conductivity is discussed by computing the Berry curvature analytically.

  8. Theoretical study of spin Hall effect in conjugated Organic semiconductors

    NASA Astrophysics Data System (ADS)

    Mahani, M. R.; Delin, A.

    The spin Hall effect (SHE), a direct conversion between electronic and spin currents, is a rapidly growing branch of spintronics. The study of SHE in conjugated polymers has gained momentum recently due to the weak spin-orbit couplings and hyperfine interactions in these materials. Our calculations of SHE based on the recent work, are the result of the misalignment of pi-orbitals in triads consisting of three molecules. In disordered organics, where the electronic conduction is through hopping of the electrons among randomly oriented molecules, instead of identifying a hopping triad to represent the entire system, we numerically solve the master equations for electrical and spin hall conductivities by summing the contributions from all triads in a sufficiently large system. The interference between the direct and indirect hoppings in these triads leads to SHE proportional to the orientation vector of molecule at the first order of spin-orbit coupling. Hence, our results show, the degree of molecular alignment as well as the strength of the spin-orbit coupling can be used to control the SHE in organics.

  9. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  10. Magnesium Hall Thruster

    NASA Technical Reports Server (NTRS)

    Szabo, James J.

    2015-01-01

    This Phase II project is developing a magnesium (Mg) Hall effect thruster system that would open the door for in situ resource utilization (ISRU)-based solar system exploration. Magnesium is light and easy to ionize. For a Mars- Earth transfer, the propellant mass savings with respect to a xenon Hall effect thruster (HET) system are enormous. Magnesium also can be combusted in a rocket with carbon dioxide (CO2) or water (H2O), enabling a multimode propulsion system with propellant sharing and ISRU. In the near term, CO2 and H2O would be collected in situ on Mars or the moon. In the far term, Mg itself would be collected from Martian and lunar regolith. In Phase I, an integrated, medium-power (1- to 3-kW) Mg HET system was developed and tested. Controlled, steady operation at constant voltage and power was demonstrated. Preliminary measurements indicate a specific impulse (Isp) greater than 4,000 s was achieved at a discharge potential of 400 V. The feasibility of delivering fluidized Mg powder to a medium- or high-power thruster also was demonstrated. Phase II of the project evaluated the performance of an integrated, highpower Mg Hall thruster system in a relevant space environment. Researchers improved the medium power thruster system and characterized it in detail. Researchers also designed and built a high-power (8- to 20-kW) Mg HET. A fluidized powder feed system supporting the high-power thruster was built and delivered to Busek Company, Inc.

  11. Spin Hall and Nernst effects of Weyl magnons

    NASA Astrophysics Data System (ADS)

    Zyuzin, Vladimir A.; Kovalev, Alexey A.

    2018-05-01

    In this paper, we present a simple model of a three-dimensional insulating magnetic structure which represents a magnonic analog of the layered electronic system described by A. A. Burkov and L. Balents [Phys. Rev. Lett. 107, 127205 (2011), 10.1103/PhysRevLett.107.127205]. In particular, our model realizes Weyl magnons as well as surface states with a Dirac spectrum. In this model, the Dzyaloshinskii-Moriya interaction is responsible for the separation of opposite Weyl points in momentum space. We calculate the intrinsic (due to the Berry curvature) transport properties of Weyl and so-called anomalous Hall effect magnons. The results are compared with fermionic analogs.

  12. First Observation of a Hall Effect in a Dusty Plasma: A Charged Granular Flow with Relevance to Planetary Rings

    NASA Astrophysics Data System (ADS)

    Eiskowitz, Skylar; Ballew, Nolan; Rojas, Rubén; Lathrop, Daniel

    2017-11-01

    The particles in Saturn's rings exhibit complex dynamic behavior. They experience solar radiation pressure, electromagnetic forces, and granular collisions. To investigate the possibility of the Hall Effect in the dusty plasma that comprise Saturn's rings, we have built an experiment that demonstrates the Hall Effect in granular matter. We focus on the Hall Effect because the rings' grains become collisionally charged and experience Saturn's dipolar magnetic field and Lorentz forces as they orbit. The experimental setup includes a closed ring-like track where granular matter is forced to circulate driven by compressed air. The structure sits between two electromagnets so that a portion of the track experiences up to a 0.2 T magnetic field. We vary the strength of the field and the speed of the particles. We report the voltage differences between two conducting plates on opposite sides of the track. If Saturn's rings do experience the Hall Effect, the inside and outside of the rings will develop a charge separation that can lead to a radial electric field and various phenomena including orbital effects due to the additional electric forces. Observational evidence from Cassini suggests that Saturn's rings exhibit lighting, supporting the notion that they are electrically charged. TREND REU program sponsored by the National Science Foundation.

  13. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping, E-mail: jpwang@umn.edu, E-mail: moli@umn.edu

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  14. On-Chip Microwave Quantum Hall Circulator

    NASA Astrophysics Data System (ADS)

    Mahoney, A. C.; Colless, J. I.; Pauka, S. J.; Hornibrook, J. M.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.; Doherty, A. C.; Reilly, D. J.

    2017-01-01

    Circulators are nonreciprocal circuit elements that are integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their nonreciprocity arises from the interference of microwaves over the centimeter scale of the signal wavelength, in the presence of bulky magnetic media that breaks time-reversal symmetry. Here, we realize a completely passive on-chip microwave circulator with size 1 /1000 th the wavelength by exploiting the chiral, "slow-light" response of a two-dimensional electron gas in the quantum Hall regime. For an integrated GaAs device with 330 μ m diameter and about 1-GHz center frequency, a nonreciprocity of 25 dB is observed over a 50-MHz bandwidth. Furthermore, the nonreciprocity can be dynamically tuned by varying the voltage at the port, an aspect that may enable reconfigurable passive routing of microwave signals on chip.

  15. Copenhagen's single system premise prevents a unified view of integer and fractional quantum hall effect

    NASA Astrophysics Data System (ADS)

    Post, Evert Jan

    1999-05-01

    This essay presents conclusive evidence of the impermissibility of Copenhagen's single system interpretation of the Schroedinger process. The latter needs to be viewed as a tool exclusively describing phase and orientation randomized ensembles and is not be used for isolated single systems. Asymptotic closeness of single system and ensemble behavior and the rare nature of true single system manifestations have prevented a definitive identification of this Copenhagen deficiency over the past three quarter century. Quantum uncertainty so becomes a basic trade mark of phase and orientation disordered ensembles. The ensuing void of usable single system tools opens a new inquiry for tools without statistical connotations. Three, in part already known, period integrals here identified as flux, charge and action counters emerge as diffeo-4 invariant tools fully compatible with the demands of the general theory of relativity. The discovery of the quantum Hall effect has been instrumental in forcing a distinction between ensemble disorder as in the normal Hall effect versus ensemble order in the plateau states. Since the order of the latter permits a view of the plateau states as a macro- or meso-scopic single system, the period integral description applies, yielding a straightforward unified description of integer and fractional quantum Hall effects.

  16. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

    NASA Astrophysics Data System (ADS)

    Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

    2010-04-01

    We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

  17. Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

    2014-11-15

    Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

  18. Iodine Plasma Species Measurements in a Hall Effect Thruster Plume

    DTIC Science & Technology

    2013-04-01

    direction f = species fraction 0g = gravitational constant at Earth’s surface, 9.81 m/s 2 I = current, subscripts b for beam, c for cathode, d for...Hall effect thruster uses crossed electric and magnetic fields to generate and accelerate ions. The gas in the discharge is partially ionized, although...early 1960s.10 Ions are weakly magnetized and most are accelerated directly out of the channel, forming the ion beam. The bulk of the cathode

  19. Performance Characterization of the Air Force Transformational Satellite 12 kW Hall Thruster

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Haag, Thomas W.; Smith, Timothy; Herman, Daniel; Huang, Wensheng; Shastry, Rohit; Peterson, Peter; Mathers, Alex

    2013-01-01

    The STMD GCD ISP project is tasked with developing, maturing, and testing enabling human exploration propulsion requirements and potential designs for advanced high-energy, in-space propulsion systems to support deep-space human exploration and reduce travel time between Earth's orbit and future destinations for human activity. High-power Hall propulsion systems have been identified as enabling technologies and have been the focus of the activities at NASA Glenn-In-house effort to evaluate performance and interrogate operation of NASA designed and manufactured Hall thrusters. Evaluate existing high TRL EP devices that may be suitable for implementation in SEP TDM.

  20. Enhanced thermoelectric response in the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

    2018-02-01

    We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

  1. The shear-Hall instability in newborn neutron stars

    NASA Astrophysics Data System (ADS)

    Kondić, T.; Rüdiger, G.; Hollerbach, R.

    2011-11-01

    Aims: In the first few minutes of a newborn neutron star's life the Hall effect and differential rotation may both be important. We demonstrate that these two ingredients are sufficient for generating a "shear-Hall instability" and for studying its excitation conditions, growth rates, and characteristic magnetic field patterns. Methods: We numerically solve the induction equation in a spherical shell, with a kinematically prescribed differential rotation profile Ω(s), where s is the cylindrical radius. The Hall term is linearized about an imposed uniform axial field. The linear stability of individual azimuthal modes, both axisymmetric and non-axisymmetric, is then investigated. Results: For the shear-Hall instability to occur, the axial field must be parallel to the rotation axis if Ω(s) decreases outward, whereas if Ω(s) increases outward it must be anti-parallel. The instability draws its energy from the differential rotation, and occurs on the short rotational timescale rather than on the much longer Hall timescale. It operates most efficiently if the Hall time is comparable to the diffusion time. Depending on the precise field strengths B0, either axisymmetric or non-axisymmetric modes may be the most unstable. Conclusions: Even if the differential rotation in newborn neutron stars is quenched within minutes, the shear-Hall instability may nevertheless amplify any seed magnetic fields by many orders of magnitude.

  2. Chiral pair of Fermi arcs, anomaly cancellation, and spin or valley Hall effects in Weyl metals with broken inversion symmetry

    NASA Astrophysics Data System (ADS)

    Jang, Iksu; Kim, Ki-Seok

    2018-04-01

    Anomaly cancellation has been shown to occur in broken time-reversal symmetry Weyl metals, which explains the existence of a Fermi arc. We extend this result in the case of broken inversion symmetry Weyl metals. Constructing a minimal model that takes a double pair of Weyl points, we demonstrate the anomaly cancellation explicitly. This demonstration explains why a chiral pair of Fermi arcs appear in broken inversion symmetry Weyl metals. In particular, we find that this pair of Fermi arcs gives rise to either "quantized" spin Hall or valley Hall effects, which corresponds to the "quantized" version of the charge Hall effect in broken time-reversal symmetry Weyl metals.

  3. Hall-Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors

    NASA Astrophysics Data System (ADS)

    Chang, Jui-Fen; Sakanoue, Tomo; Olivier, Yoann; Uemura, Takafumi; Dufourg-Madec, Marie-Beatrice; Yeates, Stephen G.; Cornil, Jérôme; Takeya, Jun; Troisi, Alessandro; Sirringhaus, Henning

    2011-08-01

    Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

  4. Large anomalous Hall effect in Pt interfaced with perpendicular anisotropy ferrimagnetic insulator

    NASA Astrophysics Data System (ADS)

    Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Garay, Javier; Shi, Jing; Shines Team

    We demonstrate the strain induced perpendicular magnetic anisotropy (PMA) in a ferrimagnetic insulator (FMI), Tm3Fe5O12 (TIG) and the first observation of large anomalous Hall effect (AHE) in TIG/Pt bilayers. Atomically flat TIG films were deposited by a laser molecular beam epitaxy system on (111)-orientated substituted gadolinium gallium garnet substrates. The strength of PMA could be effectively tuned by controlling the oxygen pressure during deposition. Sharp squared anomalous Hall hysteresis loops were observed in bilayers of TIG/Pt over a range of thicknesses of Pt, with the maximum AHE conductivity reaching 1 S/cm at room temperature. The AHE vanishes when a 5 nm Cu layer was inserted between Pt and TIG, strongly indicating the proximity-induced ferromagnetism in Pt. The large AHE in the bilayer structures demonstrates a potential use of PMA-FMI related heterostructures in spintronics. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

  5. 6D fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Heckman, Jonathan J.; Tizzano, Luigi

    2018-05-01

    We present a 6D generalization of the fractional quantum Hall effect involving membranes coupled to a three-form potential in the presence of a large background four-form flux. The low energy physics is governed by a bulk 7D topological field theory of abelian three-form potentials with a single derivative Chern-Simons-like action coupled to a 6D anti-chiral theory of Euclidean effective strings. We derive the fractional conductivity, and explain how continued fractions which figure prominently in the classification of 6D superconformal field theories correspond to a hierarchy of excited states. Using methods from conformal field theory we also compute the analog of the Laughlin wavefunction. Compactification of the 7D theory provides a uniform perspective on various lower-dimensional gapped systems coupled to boundary degrees of freedom. We also show that a supersymmetric version of the 7D theory embeds in M-theory, and can be decoupled from gravity. Encouraged by this, we present a conjecture in which IIB string theory is an edge mode of a 10 + 2-dimensional bulk topological theory, thus placing all twelve dimensions of F-theory on a physical footing.

  6. Topological approach to quantum Hall effects and its important applications: higher Landau levels, graphene and its bilayer

    NASA Astrophysics Data System (ADS)

    Jacak, Janusz; Łydżba, Patrycja; Jacak, Lucjan

    2017-05-01

    In this paper the topological approach to quantum Hall effects is carefully described. Commensurability conditions together with proposed generators of a system braid group are employed to establish the fractional quantum Hall effect hierarchies of conventional semiconductors, monolayer and bilayer graphene structures. Obtained filling factors are compared with experimental data and a very good agreement is achieved. Preliminary constructions of ground-state wave functions in the lowest Landau level are put forward. Furthermore, this work explains why pyramids of fillings from higher bands are not counterparts of the well-known composite-fermion hierarchy - it provides with the cause for an intriguing robustness of ν = 7/3 , 8/3 and 5/2 states (also in graphene). The argumentation why paired states can be developed in two-subband systems (wide quantum wells) only when the Fermi energy lies in the first Landau level is specified. Finally, the paper also clarifies how an additional surface in bilayer systems contributes to an observation of the fractional quantum Hall effect near half-filling, ν = 1/2 .

  7. All-electrical detection of spin dynamics in magnetic antidot lattices by the inverse spin Hall effect

    DOE PAGES

    Jungfleisch, Matthias B.; Zhang, Wei; Ding, Junjia; ...

    2016-02-03

    The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become a significant aspect of the development of novel magnetic storage technologies. Numerous ferromagnetic resonance measurements, optical characterization by Kerr microscopy and Brillouin light scattering spectroscopy and x-ray studies were carried out to detect the dynamics in patterned magnetic antidot lattices. Here, we investigate Oersted-field driven spin dynamics in rectangular Ni80Fe20/Pt antidot lattices with different lattice parameters by electrical means. When the system is driven to resonance, a dc voltage across the length of the sample is detected that changes its sign upon field reversal, whichmore » is in agreement with a rectification mechanism based on the inverse spin Hall effect. Furthermore, we show that the voltage output scales linearly with the applied microwave drive in the investigated range of powers. Lastly, our findings have direct implications on the development of engineered magnonics applications and devices.« less

  8. Hall Effect Thruster Plume Contamination and Erosion Study

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.

    2000-01-01

    The objective of the Hall effect thruster plume contamination and erosion study was to evaluate the impact of a xenon ion plume on various samples placed in the vicinity of a Hall effect thruster for a continuous 100 hour exposure. NASA Glenn Research Center was responsible for the pre- and post-test evaluation of three sample types placed around the thruster: solar cell cover glass, RTV silicone, and Kapton(R). Mass and profilometer), were used to identify the degree of deposition and/or erosion on the solar cell cover glass, RTV silicone, and Kapton@ samples. Transmittance, reflectance, solar absorptance, and room temperature emittance were used to identify the degree of performance degradation of the solar cell cover glass samples alone. Auger spectroscopy was used to identify the chemical constituents found on the surface of the exposed solar cell cover glass samples. Chemical analysis indicated some boron nitride contamination on the samples, from boron nitride insulators used in the body of the thruster. However, erosion outweighted contamination. All samples exhibited some degree of erosion. with the most erosion occurring near the centerline of the plume and the least occurring at the +/- 90 deg positions. For the solar cell cover glass samples, erosion progressed through the antireflective coating and into the microsheet glass itself. Erosion occurred in the solar cell cover glass, RTV silicone and Kapton(R) at different rates. All optical properties changed with the degree of erosion, with solar absorptance and room temperature emittance increasing with erosion. The transmittance of some samples decreased while the reflectance of some samples increased and others decreased. All results are consistent with an energetic plume of xenon ions serving as a source for erosion.

  9. Hall viscosity and electromagnetic response of electrons in graphene

    NASA Astrophysics Data System (ADS)

    Sherafati, Mohammad; Principi, Alessandro; Vignale, Giovanni

    The Hall viscosity is a dissipationless component of the viscosity tensor of an electron liquid with broken time- reversal symmetry, such as a two-dimensional electron gas (2DEG) in the quantum Hall state. Similar to the Hall conductivity, the Hall viscosity is an anomalous transport coefficient; however, while the former is connected with the current response, the latter stems from the stress response to a geometric deformation. For a Galilean-invariant system such as 2DEG, the current density is indeed the generator of the geometric deformation: therefore a connection between the Hall connectivity and viscosity is expected and by now well established. In the case of graphene, a non-Galilean-invariant system, the existence of such a connection is far from obvious, as the current operator is essentially different from the momentum operator. In this talk, I will first present our results of the geometric Hall viscosity of electrons in single-layer graphene. Then, from the expansion of the nonlocal Hall conductivity for small wave vectors, I demonstrate that, in spite of the lack of Galilean invariance, an effective mass can be defined such that the relationship between the Hall conductivity and the viscosity retains the form it has in Galilean-invariant systems, not only for a large number of occupied Landau levels, but also, with very high accuracy, for the undoped system.

  10. Ensemble Density Functional Approach to the Quantum Hall Effect

    NASA Astrophysics Data System (ADS)

    Heinonen, O.

    1997-03-01

    The fractional quantum Hall effect (FQHE) occurs in a two-dimensional electron gas of density n when a strong magnetic field perpendicular to the plane of the electron gas takes on certain strengths B(n). At these magnetic field strengths the system is incompressible, i.e., there is a finite cost in energy for creating charge density fluctuations in the bulk. Even so the boundary of the electron gas supports gapless modes of density waves. The bulk energy gap arises because of the strong electron-electron interactions. There are very good models for infinite homogeneous systems and for the gapless excitations of the boundary of the electron gas. But in order to explain experiments on quantum Hall systems, including Hall bars and quantum dots, new approaches are needed which can accurately describe inhomogeneous systems, including Landau level mixing and the spin degree of freedom. One possibility is an ensemble density functional theory approach that we have developed.(O. Heinonen, M.I. Lubin, and M.D. Johnson, Phys. Rev. Lett. 75), 4110 (1995)(O. Heinonen, M.I. Lubin, and M.D. Johnson, Int. J. Quant. Chem, December 1996) We have applied this to study edge reconstructions of spin-polarized quantum dots. The results for a six-electron test case are in excellent agreement with numerical diagonalizations. For larger systems, compressible and incompressible strips appear as the magnetic field is increased from the region in which a dot forms a compact so-called maximum density droplet. We have recently included spin degree of freedom to study the stability of a maximum density droplet, and charge-spin textures in inhomogeneous systems. As an example, when the Zeeman coupling is decreased, we find that the maximum density droplet develops a spin-structured edge instability. This implies that the spin degree of freedom may play a significant role in the study of edge modes at low or moderate magnetic fields.

  11. Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator

    NASA Astrophysics Data System (ADS)

    Yasuda, K.; Tsukazaki, A.; Yoshimi, R.; Kondou, K.; Takahashi, K. S.; Otani, Y.; Kawasaki, M.; Tokura, Y.

    2017-09-01

    The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Crx (Bi1 -ySby )2 -xTe3 /(Bi1 -ySby )2Te3 , where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 ×1010 A m-2 , showing its potential as a spintronic material.

  12. Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator.

    PubMed

    Yasuda, K; Tsukazaki, A; Yoshimi, R; Kondou, K; Takahashi, K S; Otani, Y; Kawasaki, M; Tokura, Y

    2017-09-29

    The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Cr_{x}(Bi_{1-y}Sb_{y})_{2-x}Te_{3}/(Bi_{1-y}Sb_{y})_{2}Te_{3}, where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5×10^{10}  A m^{-2}, showing its potential as a spintronic material.

  13. Anomalous Nernst and thermal Hall effects in tilted Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Ferreiros, Yago; Zyuzin, A. A.; Bardarson, Jens H.

    2017-09-01

    We study the anomalous Nernst and thermal Hall effects in a linearized low-energy model of a tilted Weyl semimetal, with two Weyl nodes separated in momentum space. For inversion symmetric tilt, we give analytic expressions in two opposite limits: For a small tilt, corresponding to a type-I Weyl semimetal, the Nernst conductivity is finite and independent of the Fermi level; for a large tilt, corresponding to a type-II Weyl semimetal, it acquires a contribution depending logarithmically on the Fermi energy. This result is in a sharp contrast to the nontilted case, where the Nernst response is known to be zero in the linear model. The thermal Hall conductivity similarly acquires Fermi surface contributions, which add to the Fermi level-independent, zero-tilt result, and is suppressed as one over the tilt parameter at half filling in the type-II phase. In the case of inversion-breaking tilt, with the tilting vector of equal modulus in the two Weyl cones, all Fermi surface contributions to both anomalous responses cancel out, resulting in zero Nernst conductivity. We discuss two possible experimental setups, representing open and closed thermoelectric circuits.

  14. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida, two space explorers, Scott D. Altman, second from left, and Thomas D. Jones, Ph.D., far right, are inducted into the U.S. Astronaut Hall of Fame Class of 2018. At far left is Hall of Famer Curt Brown, board chairman, Astronaut Scholarship Foundation, who inducted Altman and Jones into the AHOF. Second from right is Hall of Famer John Grunsfeld, who spoke on behalf of Altman during the ceremony. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  15. Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals

    NASA Astrophysics Data System (ADS)

    Sung, N. H.; Ronning, F.; Thompson, J. D.; Bauer, E. D.

    2018-03-01

    Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω-1 cm-1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

  16. Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1 -yCoyGe films

    NASA Astrophysics Data System (ADS)

    Spencer, Charles S.; Gayles, Jacob; Porter, Nicholas A.; Sugimoto, Satoshi; Aslam, Zabeada; Kinane, Christian J.; Charlton, Timothy R.; Freimuth, Frank; Chadov, Stanislav; Langridge, Sean; Sinova, Jairo; Felser, Claudia; Blügel, Stefan; Mokrousov, Yuriy; Marrows, Christopher H.

    2018-06-01

    Epitaxial films of the B20-structure compound Fe1 -yCoyGe were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulklike values of one Bohr magneton per Fe atom for FeGe to zero for nonmagnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content y and diverges at y ˜0.45 . This indicates a zero crossing of the DMI, which we reproduced in calculations using first-principles methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content y . The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around y ˜0.5 . Our first-principles calculations show a peak in the topological Hall constant at this value of y , related to the strong spin polarization predicted for intermediate values of y . Our calculations predict half-metallicity for y =0.6 , consistent with the experimentally observed linear magnetoresistance at this composition, and potentially related to the other unusual transport properties for intermediate value of y . While it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for y ˜0.5 are much larger than expected when the very small emergent fields associated with the divergence in the DMI are taken into account.

  17. NASA's Hall Thruster Program 2002

    NASA Technical Reports Server (NTRS)

    Jankovsky, Robert S.; Jacobson, David T.; Pinero, Luis R.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

    2002-01-01

    The NASA Hall thruster program currently supports a number of tasks related to high power thruster development for a number of customers including the Energetics Program (formerly called the Space-based Program), the Space Solar Power Program, and the In-space Propulsion Program. In program year 2002, two tasks were central to the NASA Hall thruster program: 1) the development of a laboratory Hall thruster capable of providing high thrust at high power-, and 2) investigations into operation of Hall thrusters at high specific impulse. In addition to these two primary thruster development activities, there are a number of other on-going activities supported by the NASA Hall thruster program. These additional activities are related to issues such as high-power power processor architecture, thruster lifetime, and spacecraft integration.

  18. Magnetic circuit for hall effect plasma accelerator

    NASA Technical Reports Server (NTRS)

    Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor); Jankovsky, Robert S. (Inventor)

    2009-01-01

    A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.

  19. Advanced Hall Electric Propulsion for Future In-space Transportation

    NASA Technical Reports Server (NTRS)

    Oleson, Steven R.; Sankovic, John M.

    2001-01-01

    The Hall thruster is an electric propulsion device used for multiple in-space applications including orbit raising, on-orbit maneuvers, and de-orbit functions. These in-space propulsion functions are currently performed by toxic hydrazine monopropellant or hydrazine derivative/nitrogen tetroxide bi-propellant thrusters. The Hall thruster operates nominally in the 1500 sec specific impulse regime. It provides greater thrust to power than conventional gridded ion engines, thus reducing trip times and operational life when compared to that technology in Earth orbit applications. The technology in the far term, by adding a second acceleration stage, has shown promise of providing over 4000s Isp, the regime of the gridded ion engine and necessary for deep space applications. The Hall thruster system consists of three parts, the thruster, the power processor, and the propellant system. The technology is operational and commercially available at the 1.5 kW power level and 5 kW application is underway. NASA is looking toward 10 kW and eventually 50 kW-class engines for ambitious space transportation applications. The former allows launch vehicle step-down for GEO missions and demanding planetary missions such as Europa Lander, while the latter allows quick all-electric propulsion LEO to GEO transfers and non-nuclear transportation human Mars missions.

  20. Not your grandfather's concert hall

    NASA Astrophysics Data System (ADS)

    Cooper, Russell; Malenka, Richard; Griffith, Charles; Friedlander, Steven

    2004-05-01

    The opening of Judy and Arthur Zankel Hall on 12 September 2003, restores Andrew Carnegie's original 1891 concept of having three outstanding auditoriums of different sizes under one roof, and creates a 21st-century venue for music performance and education. With concerts ranging from early music to avant-garde multimedia productions, from jazz to world music, and from solo recitals to chamber music, Zankel Hall expands the breadth and depth of Carnegie Hall's offerings. It allows for the integration of programming across three halls with minifestivals tailored both to the size and strengths of each hall and to the artists and music to be performed. The new flexible space also provides Carnegie Hall with an education center equipped with advanced communications technology. This paper discusses the unique program planned for this facility and how the architects, theatre consultants, and acousticians developed a design that fulfilled the client's expectations and coordinated the construction of the facility under the floor of the main Isaac Stern Auditorium without having to cancel a single performance.

  1. Performance of a Permanent-Magnet Cylindrical Hall-Effect Thruster

    NASA Technical Reports Server (NTRS)

    Polzin, K. A.; Sooby, E. S.; Kimberlin, A. C.; Raites, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic topologies. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying higher thrust efficiency. Thruster performance measurements on this configuration were obtained over a power range of 70-350 W and with the cathode orifice located at three different axial positions relative to the thruster exit plane. The thrust levels over this power range were 1.25-6.5 mN, with anode efficiencies and specific impulses spanning 4-21% and 400-1950 s, respectively. The anode efficiency of the permanent-magnet thruster compares favorable with the efficiency of the electromagnet thruster when the power consumed by the electromagnets is taken into account.

  2. The Hall-induced stability of gravitating fluids

    NASA Astrophysics Data System (ADS)

    Karmakar, P. K.; Goutam, H. P.

    2018-05-01

    We analyze the stability behavior of low-density partially ionized self-gravitating magnetized unbounded dusty plasma fluid in the presence of the Hall diffusion effects (HDEs) in the non-ideal magnetohydrodynamic (MHD) equilibrium framework. The effects of inhomogeneous self-gravity are methodically included in the basic model tapestry. Application of the Fourier plane-wave perturbative treatment decouples the structuration representative parameters into a linear generalized dispersion relation (sextic) in a judicious mean-fluid approximation. The dispersion analysis shows that the normal mode, termed as the gravito-magneto-acoustic (GMA) mode, is drastically modified due to the HDEs. This mode is highly dispersive, and driven unstable by the Hall current resulting from the symmetry-breaking of electrons and ions relative to the magnetic field. The mode feature, which is derived from a modified induction with the positive Hall, is against the ideal MHD. It is further demonstrated that the HDEs play stabilizing roles by supporting the cloud against gravitational collapse. Provided that the HDEs are concurrently switched off, the collapse occurs on the global spatial scale due to enhanced inward accretion of the gravitating dust constituents. It is seen explicitly that the enhanced dust-charge leads to stabilizing effects. Besides, the Hall-induced fluctuations, as propagatory wave modes, exhibit both normal and anomalous dispersions. The reliability checkup of the entailed results as diverse corollaries and special cases are illustratively discussed in the panoptic light of the earlier paradigmatic predictions available in the literature.

  3. Effect of segmented electrode length on the performances of Hall thruster

    NASA Astrophysics Data System (ADS)

    Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

    2016-09-01

    The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

  4. Magnetometry of micro-magnets with electrostatically defined Hall bars

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent

    2015-11-30

    Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large currentmore » density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.« less

  5. High-performance LED luminaire for sports hall

    NASA Astrophysics Data System (ADS)

    Lee, Xuan-Hao; Yang, Jin-Tsung; Chien, Wei-Ting; Chang, Jung-Hsuan; Lo, Yi-Chien; Lin, Che-Chu; Sun, Ching-Cherng

    2015-09-01

    In this paper, we present a luminaire design with anti-glare and energy-saving effects for sports hall. Compared with traditional lamps using in a badminton court, the average illuminance on the ground of the proposed LED luminaire is enhanced about 300%. Besides, the uniformity is obviously enhanced and improved. The switch-on speed of lighting in sports hall is greatly reduced from 5-10 minutes to 1 second. The simulation analysis and the corresponding experiment results are demonstrated.

  6. NASA's Hall Thruster Program

    NASA Technical Reports Server (NTRS)

    Jankovsky, Robert S.; Jacobson, David T.; Rawlin, Vincent K.; Mason, Lee S.; Mantenieks, Maris A.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

    2001-01-01

    NASA's Hall thruster program has base research and focused development efforts in support of the Advanced Space Transportation Program, Space-Based Program, and various other programs. The objective of the base research is to gain an improved understanding of the physical processes and engineering constraints of Hall thrusters to enable development of advanced Hall thruster designs. Specific technical questions that are current priorities of the base effort are: (1) How does thruster life vary with operating point? (2) How can thruster lifetime and wear rate be most efficiently evaluated? (3) What are the practical limitations for discharge voltage as it pertains to high specific impulse operation (high discharge voltage) and high thrust operation (low discharge voltage)? (4) What are the practical limits for extending Hall thrusters to very high input powers? and (5) What can be done during thruster design to reduce cost and integration concerns? The objective of the focused development effort is to develop a 50 kW-class Hall propulsion system, with a milestone of a 50 kW engineering model thruster/system by the end of program year 2006. Specific program wear 2001 efforts, along with the corporate and academic participation, are described.

  7. Influence of Mn concentration on magnetic topological insulator Mn xBi 2−xTe 3 thin-film Hall-effect sensor

    DOE PAGES

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi 2Te 3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi 2Te 3. The sensors with low Mn concentrations, Mn xBi 2-xTe 3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almostmore » eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

  8. Cross-field diffusion in Hall thrusters and other plasma thrusters

    NASA Astrophysics Data System (ADS)

    Boeuf, J. P.

    2012-10-01

    Understanding and quantifying electron transport perpendicular to the magnetic field is a challenge in many low temperature plasma applications. Hall effect thrusters (HETs) provide an excellent example of cross-field transport. The HET is a very successful concept that can be considered both as a gridless ion source and an electromagnetic thruster. In HETs, the electric field E accelerating the ions is a consequence of the Lorentz force due to an external magnetic field B acting on the ExB Hall electron current. An essential aspect of HETs is that the ExB drift is closed, i.e. is in the azimuthal direction of a cylindrical channel. In the first part of this presentation we will discuss the physics of cross-field electron transport in HETs, and the current understanding (or non-understanding) of the possible role of turbulence and wall collisions on cross-field diffusion. We will also briefly comment on alternative designs of ion sources based on the same principles as the conventional HET (Anode Layer Thruster, Diverging Cusp Field Thrusters, End-Hall ion sources). In a second part of the presentation we show that the Lorentz force acting on diamagnetic currents (associated with the ∇PexB term in the electron momentum equation) can also provide thrust. This is the case for example in helicon thrusters where the plasma expands in a magnetic nozzle. We will report and discuss recent work on helicon thrusters and other devices where the diamagnetic current is dominant (with some examples where the ∇PexB current is not closed and is directed toward a wall!).

  9. NASA HERMeS Hall Thruster Electrical Configuration Characterization

    NASA Technical Reports Server (NTRS)

    Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

    2015-01-01

    The NASA Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in-space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This paper describes the electrical configuration testing of the HERMeS TDU-1 Hall thruster in NASA Glenn Research Center's Vacuum Facility 5. The three electrical configurations examined were 1) thruster body tied to facility ground, 2) thruster floating, and 3) thruster body electrically tied to cathode common. The HERMeS TDU-1 Hall thruster was also configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

  10. High Throughput 600 Watt Hall Effect Thruster for Space Exploration

    NASA Technical Reports Server (NTRS)

    Szabo, James; Pote, Bruce; Tedrake, Rachel; Paintal, Surjeet; Byrne, Lawrence; Hruby, Vlad; Kamhawi, Hani; Smith, Tim

    2016-01-01

    A nominal 600-Watt Hall Effect Thruster was developed to propel unmanned space vehicles. Both xenon and iodine compatible versions were demonstrated. With xenon, peak measured thruster efficiency is 46-48% at 600-W, with specific impulse from 1400 s to 1700 s. Evolution of the thruster channel due to ion erosion was predicted through numerical models and calibrated with experimental measurements. Estimated xenon throughput is greater than 100 kg. The thruster is well sized for satellite station keeping and orbit maneuvering, either by itself or within a cluster.

  11. Calibration of a Hall effect displacement measurement system for complex motion analysis using a neural network.

    PubMed

    Northey, G W; Oliver, M L; Rittenhouse, D M

    2006-01-01

    Biomechanics studies often require the analysis of position and orientation. Although a variety of transducer and camera systems can be utilized, a common inexpensive alternative is the Hall effect sensor. Hall effect sensors have been used extensively for one-dimensional position analysis but their non-linear behavior and cross-talk effects make them difficult to calibrate for effective and accurate two- and three-dimensional position and orientation analysis. The aim of this study was to develop and calibrate a displacement measurement system for a hydraulic-actuation joystick used for repetitive motion analysis of heavy equipment operators. The system utilizes an array of four Hall effect sensors that are all active during any joystick movement. This built-in redundancy allows the calibration to utilize fully connected feed forward neural networks in conjunction with a Microscribe 3D digitizer. A fully connected feed forward neural network with one hidden layer containing five neurons was developed. Results indicate that the ability of the neural network to accurately predict the x, y and z coordinates of the joystick handle was good with r(2) values of 0.98 and higher. The calibration technique was found to be equally as accurate when used on data collected 5 days after the initial calibration, indicating the system is robust and stable enough to not require calibration every time the joystick is used. This calibration system allowed an infinite number of joystick orientations and positions to be found within the range of joystick motion.

  12. Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

    DOE PAGES

    Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David; ...

    2018-03-29

    Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

  13. Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David

    Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

  14. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

    PubMed Central

    Chen, Sung-Ping; Huang, Zhi-Quan; Crisostomo, Christian P.; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2016-01-01

    Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. Our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect. PMID:27507248

  15. High-Efficiency Helical Coil Electromagnetic Launcher and High Power Hall-Effect Switch

    DTIC Science & Technology

    2008-02-29

    also given that demonstrate significant launcher performance benefits by super-cooling the armature (i.e., using liquid nitrogen ). 14. ABSTRACT... liquid nitrogen temperatures). A computer model for a magnetically-controlled Hall-effect switch is developed. The model is constructed in the PSpice...of super-cooling is demonstrated with liquid nitrogen cooling and indicates super-cooled EML operation is desirable if cryo-cooling is practical for

  16. Perceived Effectiveness of Hall Director Leadership Style on the Satisfaction of Resident Assistants in Mississippi

    ERIC Educational Resources Information Center

    Morris, Rheo Joelyn Avorice

    2009-01-01

    The purpose of this study was to ascertain which leadership style correlates most with RA satisfaction in residence halls at three public universities in Mississippi. When satisfied, RAs will be more efficient in their roles and this will transfer to students residing in the halls. As a result more students in the residence halls will become more…

  17. Photonic spin Hall effect enabled refractive index sensor using weak measurements.

    PubMed

    Zhou, Xinxing; Sheng, Lijuan; Ling, Xiaohui

    2018-01-19

    In this work, we theoretically propose an optical biosensor (consists of a BK7 glass, a metal film, and a graphene sheet) based on photonic spin Hall effect (SHE). We establish a quantitative relationship between the spin-dependent shift in photonic SHE and the refractive index of sensing medium. It is found that, by considering the surface plasmon resonance effect, the refractive index variations owing to the adsorption of biomolecules in sensing medium can effectively change the spin-dependent displacements. Remarkably, using the weak measurement method, this tiny spin-dependent shifts can be detected with a desirable accuracy so that the corresponding biomolecules concentration can be determined.

  18. Composite Fermions: Motivation, Successes, and Application to Fractional Quantum Hall Effect in Graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jain, Jainendra

    2011-07-15

    The fractional quantum Hall effect (FQHE) is one of the most amazing collective states discovered in modern times. A remarkably detailed and accurate understanding of its nonperturbative physics has been achieved in terms of a new class of exotic particles called composite fermions. I will begin with a brief review of the composite fermion theory and its outstanding successes. The rest of the talk will be concerned with fractional quantum Hall effect in graphene, observed recently. I will present results of theoretical studies that demonstrate that composite fermions are formed in graphene as well, but the spin and valley degeneraciesmore » and the linear dispersion of electrons produce interesting new physics relative to that in the usual two-dimensional GaAs systems. Composite fermion theory allows detailed predictions about FQHE in graphene in regimes when either or both of the spin and valley degeneracies are broken. I will discuss the relevance of our theory to recent experiments. This work on FQHE in graphene has been performed in collaboration with Csaba Toke.« less

  19. Deformed Calogero-Sutherland model and fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Atai, Farrokh; Langmann, Edwin

    2017-01-01

    The deformed Calogero-Sutherland (CS) model is a quantum integrable system with arbitrary numbers of two types of particles and reducing to the standard CS model in special cases. We show that a known collective field description of the CS model, which is based on conformal field theory (CFT), is actually a collective field description of the deformed CS model. This provides a natural application of the deformed CS model in Wen's effective field theory of the fractional quantum Hall effect (FQHE), with the two kinds of particles corresponding to electrons and quasi-hole excitations. In particular, we use known mathematical results about super-Jack polynomials to obtain simple explicit formulas for the orthonormal CFT basis proposed by van Elburg and Schoutens in the context of the FQHE.

  20. Effects of wall electrodes on Hall effect thruster plasma

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Langendorf, S., E-mail: samuel.langendorf@gatech.edu; Walker, M., E-mail: mitchell.walker@ae.gatech.edu; High-Power Electric Propulsion Laboratory, 625 Lambert St NW, Atlanta, Georgia 30318

    2015-02-15

    This paper investigates the physical mechanisms that cause beneficial and detrimental performance effect observed to date in Hall effect thrusters with wall electrodes. It is determined that the wall electrode sheath can reduce ion losses to the wall if positioned near the anode (outside the dense region of the plasma) such that an ion-repelling sheath is able to form. The ability of the wall electrode to form an ion-repelling sheath is inversely proportional to the current drawn—if the wall electrode becomes the dominant sink for the thruster discharge current, increases in wall electrode bias result in increased local plasma potentialmore » rather than an ion-repelling sheath. A single-fluid electron flow model gives results that mimic the observed potential structures and the current-sharing fractions between the anode and wall electrodes, showing that potential gradients in the presheath and bulk plasma come at the expense of current draw to the wall electrodes. Secondary electron emission from the wall electrodes (or lack thereof) is inferred to have a larger effect if the electrodes are positioned near the exit plane than if positioned near the anode, due to the difference in energy deposition from the plasma.« less

  1. 14 GHz longitudinally detected electron spin resonance using microHall sensors

    NASA Astrophysics Data System (ADS)

    Bouterfas, M.; Mouaziz, S.; Popovic, R. S.

    2017-09-01

    In this work we developed a home-made LOngitudinally Detected Electron Spin Resonance (LODESR) spectrometer based on a microsize Hall sensor. A coplanar waveguide (CPW)-resonator is used to induce microwave-excitation on the sample at 14 GHz. We used InSb cross-shaped Hall devices with active areas of (10 μm × 10 μm) and (5 μm × 5 μm) . Signal intensities of the longitudinal magnetization component of DPPH and YIG samples of volumes about (10 μm) 3 and (5 μm) 3 , are measured under amplitude and frequency modulated microwave magnetic field generated by the CPW-resonator. At room temperature, 109spins /G √Hz sensitivity is achieved for 0.2mT linewidth, a result which is still better than most of inductive detected LODESR sensitivities.

  2. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

    DOE PAGES

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

    2016-07-01

    Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

  3. Impact of the Hall effect on high-energy-density plasma jets.

    PubMed

    Gourdain, P-A; Seyler, C E

    2013-01-04

    Using a 1-MA, 100 ns-rise-time pulsed power generator, radial foil configurations can produce strongly collimated plasma jets. The resulting jets have electron densities on the order of 10(20) cm(-3), temperatures above 50 eV and plasma velocities on the order of 100 km/s, giving Reynolds numbers of the order of 10(3), magnetic Reynolds and Péclet numbers on the order of 1. While Hall physics does not dominate jet dynamics due to the large particle density and flow inside, it strongly impacts flows in the jet periphery where plasma density is low. As a result, Hall physics affects indirectly the geometrical shape of the jet and its density profile. The comparison between experiments and numerical simulations demonstrates that the Hall term enhances the jet density when the plasma current flows away from the jet compared to the case where the plasma current flows towards it.

  4. Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

    PubMed

    Neal, Adam T; Mou, Shin; Lopez, Roberto; Li, Jian V; Thomson, Darren B; Chabak, Kelson D; Jessen, Gregg H

    2017-10-16

    Understanding the origin of unintentional doping in Ga 2 O 3 is key to increasing breakdown voltages of Ga 2 O 3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga 2 O 3 . Previously unobserved unintentional donors in commercially available [Formula: see text] Ga 2 O 3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 10 16  cm -3 range, elimination of this donor from the drift layer of Ga 2 O 3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (R onsp ) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases R onsp and decreases breakdown voltage as compared to Ga 2 O 3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between R onsp and breakdown voltage.

  5. Spin Seebeck devices using local on-chip heating

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Stephen M.; Fradin, Frank Y.; Hoffman, Jason

    2015-05-07

    A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe3O4 (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique, it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. By using themore » spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.« less

  6. Spin Seebeck devices using local on-chip heating

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Stephen M., E-mail: swu@anl.gov; Fradin, Frank Y.; Hoffman, Jason

    2015-05-07

    A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe{sub 3}O{sub 4} (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique, it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. Bymore » using the spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.« less

  7. Low-Cost, High-Performance Hall Thruster Support System

    NASA Technical Reports Server (NTRS)

    Hesterman, Bryce

    2015-01-01

    Colorado Power Electronics (CPE) has built an innovative modular PPU for Hall thrusters, including discharge, magnet, heater and keeper supplies, and an interface module. This high-performance PPU offers resonant circuit topologies, magnetics design, modularity, and a stable and sustained operation during severe Hall effect thruster current oscillations. Laboratory testing has demonstrated discharge module efficiency of 96 percent, which is considerably higher than current state of the art.

  8. Development Status of the Helicon Hall Thruster

    DTIC Science & Technology

    2009-09-15

    Hall thruster , the Helicon Hall Thruster , is presented. The Helicon Hall Thruster combines the efficient ionization mechanism of a helicon source with the favorable plasma acceleration properties of a Hall thruster . Conventional Hall thrusters rely on direct current electron bombardment to ionize the flow in order to generate thrust. Electron bombardment typically results in an ionization cost that can be on the order of ten times the ionization potential, leading to reduced efficiency, particularly at low

  9. Laser characterization of the unsteady 2-D ion flow field in a Hall thruster with breathing mode oscillations

    NASA Astrophysics Data System (ADS)

    Lucca Fabris, Andrea; Young, Christopher; MacDonald-Tenenbaum, Natalia; Hargus, William, Jr.; Cappelli, Mark

    2016-10-01

    Hall thrusters are a mature form of electric propulsion for spacecraft. One commonly observed low frequency (10-50 kHz) discharge current oscillation in these E × B devices is the breathing mode, linked to a propagating ionization front traversing the channel. The complex time histories of ion production and acceleration in the discharge channel and near-field plume lead to interesting dynamics and interactions in the central plasma jet and downstream plume regions. A time-resolved laser-induced fluorescence (LIF) diagnostic non-intrusively measures 2-D ion velocity and relative ion density throughout the plume of a commercial BHT-600 Hall thruster manufactured by Busek Co. Low velocity classes of ions observed in addition to the main accelerated population are linked to propellant ionization outside of the device. Effects of breathing mode dynamics are shown to persist far downstream where modulations in ion velocity and LIF intensity are correlated with discharge current oscillations. This work is sponsored by the U.S. Air Force Office of Scientific Research with Dr. M. Birkan as program manager. C.Y. acknowledges support from the DOE NSSA Stewardship Science Graduate Fellowship under contract DE-FC52-08NA28752.

  10. Hall viscosity of hierarchical quantum Hall states

    NASA Astrophysics Data System (ADS)

    Fremling, M.; Hansson, T. H.; Suorsa, J.

    2014-03-01

    Using methods based on conformal field theory, we construct model wave functions on a torus with arbitrary flat metric for all chiral states in the abelian quantum Hall hierarchy. These functions have no variational parameters, and they transform under the modular group in the same way as the multicomponent generalizations of the Laughlin wave functions. Assuming the absence of Berry phases upon adiabatic variations of the modular parameter τ, we calculate the quantum Hall viscosity and find it to be in agreement with the formula, given by Read, which relates the viscosity to the average orbital spin of the electrons. For the filling factor ν =2/5 Jain state, which is at the second level in the hierarchy, we compare our model wave function with the numerically obtained ground state of the Coulomb interaction Hamiltonian in the lowest Landau level, and find very good agreement in a large region of the complex τ plane. For the same example, we also numerically compute the Hall viscosity and find good agreement with the analytical result for both the model wave function and the numerically obtained Coulomb wave function. We argue that this supports the notion of a generalized plasma analogy that would ensure that wave functions obtained using the conformal field theory methods do not acquire Berry phases upon adiabatic evolution.

  11. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Kelvin Manning, associate director of NASA's Kennedy Space Center in Florida, welcomes guests to the 2018 U.S. Astronaut Hall of Fame (AHOF) Induction inside the Space Shuttle Atlantis attraction at the Kennedy Space Center Visitor Complex (KSCVC). Two veteran space explorers were inducted into the Hall of Fame Class of 2018. They are Scott D. Altman and Thomas D. Jones, Ph.D. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  12. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Former astronauts and space explorers Scott D. Altman, at left, and Thomas D. Jones, Ph.D., are inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They unveiled their plaques, which will be placed in Hall of Fame at the visitor complex. At far right is Master of Ceremonies, John Zarella, former CNN space correspondent. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  13. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Former astronauts and space explorers Scott D. Altman, at left, and Thomas D. Jones, Ph.D., are inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They unveiled their plaques, which will be placed in the Hall of Fame at the visitor complex. At far right is Master of Ceremonies, John Zarella, former CNN space correspondent. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  14. Far-Field Plume Measurements of a Nested-Channel Hall-Effect Thruster (PREPRINT)

    DTIC Science & Technology

    2010-12-13

    nude Faraday probe, retarding potential analyzer, and ExB probe. Data from these probes were used to calculate utilization efficiencies from existing...USA Far-field plume measurements were performed on the X2 nested-channel Hall-effect thruster using an ar- ray of diagnostics, including a nude Faraday...mode to nested-channel mode by utilizing a traditional array of far-field diagnostics, which include a nude Faraday probe, retarding potential analyzer

  15. Tunable anomalous hall effect induced by interfacial catalyst in perpendicular multilayers

    NASA Astrophysics Data System (ADS)

    Zhang, J. Y.; Peng, W. L.; Sun, Q. Y.; Liu, Y. W.; Dong, B. W.; Zheng, X. Q.; Yu, G. H.; Wang, C.; Zhao, Y. C.; Wang, S. G.

    2018-04-01

    The interfacial structures, playing a critical role on the transport properties and the perpendicular magnetic anisotropy in thin films and multilayers, can be modified by inserting an ultrathin functional layer at the various interfaces. The anomalous Hall effect (AHE) in the multilayers with core structure of Ta/CoFeB/X/MgO/Ta (X: Hf or Pt) is tuned by interfacial catalytic engineering. The saturation anomalous Hall resistance (RAH) is increased by 16.5% with 0.1 nm Hf insertion compared with the reference sample without insertion. However, the RAH value is decreased by 9.0% with 0.1 nm Pt insertion. The interfacial states were characterized by the X-ray photoelectron spectroscopy (XPS). The XPS results indicate that a strong bonding between Hf and O for Hf insertion, but no bonding between Pt and O for Pt insertion. The bonding between metal and oxygen leads to various oxygen migration behavior at the interfaces. Therefore, the opposite behavior about the RAH originates from the different oxygen behavior due to various interfacial insertion. This work provides a new approach to manipulate spin transport property for the potential applications.

  16. Quenching of the Quantum Hall Effect in Graphene with Scrolled Edges

    NASA Astrophysics Data System (ADS)

    Cresti, Alessandro; Fogler, Michael M.; Guinea, Francisco; Castro Neto, A. H.; Roche, Stephan

    2012-04-01

    Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arclength of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.

  17. Comment on "Effects of Magnetic Field Gradient on Ion Beam Current in Cylindrical Hall Ion Source

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Raitses, Y.; Smirnov A.; Fisch, N.J.

    It is argued that the key difference of the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al. J. Appl. Phys., 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of Tang et al.

  18. Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

    NASA Astrophysics Data System (ADS)

    Yan, J.; Luo, X.; Chen, F. C.; Pei, Q. L.; Lin, G. T.; Han, Y. Y.; Hu, L.; Tong, P.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

    2017-07-01

    Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity ρxx and Hall resistivity ρxy), and thermal transport properties [including heat capacity Cp(T) and thermoelectric power S(T)] have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior at the Néel temperature of TN = 42 K and with the activated energy of Eg = 3.9 meV; (ii) it exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T = 2 K, and the AHE conductivity σH is about 1 Ω-1 cm-1 at T = 40 K; (iii) the scaling behavior between the anomalous Hall resistivity ρxy A and the longitudinal resistivity ρxx is linear, and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kinds of 2D AFM semiconductors.

  19. A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

    NASA Astrophysics Data System (ADS)

    Kaneko, Kentaro; Fujita, Shizuo; Hitora, Toshimi

    2018-02-01

    Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V-1 s-1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.

  20. Intrinsic quantum anomalous Hall effect in the kagome lattice Cs 2LiMn 3F 12

    DOE PAGES

    Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

    2015-10-27

    In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs 2Mn 3F 12 kagome lattice and on the (001) surface of a Cs 2LiMn 3F 12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding modelmore » based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.« less

  1. Vector-mean-field theory of the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Rejaei, B.; Beenakker, C. W. J.

    1992-12-01

    A mean-field theory of the fractional quantum Hall effect is formulated based on the adiabatic principle of Greiter and Wilczek. The theory is tested on known bulk properties (excitation gap, fractional charge, and statistics), and then applied to a confined region in a two-dimensional electron gas (quantum dot). For a small number N of electrons in the dot, the exact ground-state energy has cusps at the same angular momentum values as the mean-field theory. For large N, Wen's algebraic decay of the probability for resonant tunneling through the dot is reproduced, albeit with a different exponent.

  2. Robustness of topological Hall effect of nontrivial spin textures

    NASA Astrophysics Data System (ADS)

    Jalil, Mansoor B. A.; Tan, Seng Ghee

    2014-05-01

    We analyze the topological Hall conductivity (THC) of topologically nontrivial spin textures like magnetic vortices and skyrmions and investigate its possible application in the readback for magnetic memory based on those spin textures. Under adiabatic conditions, such spin textures would theoretically yield quantized THC values, which are related to topological invariants such as the winding number and polarity, and as such are insensitive to fluctuations and smooth deformations. However, in a practical setting, the finite size of spin texture elements and the influence of edges may cause them to deviate from their ideal configurations. We calculate the degree of robustness of the THC output in practical magnetic memories in the presence of edge and finite size effects.

  3. Influence of Hall Effect on Magnetic Control of Stagnation Point Heat Transfer

    NASA Astrophysics Data System (ADS)

    Poggie, Jonathan; Gaitonde, Datta

    2001-11-01

    Electromagnetic control is an appealing possibility for mitigating the thermal loads that occur in hypersonic flight. There was extensive research on this technique in the past (up to about 1970), but enthusiasm waned because of problems of system cost and weight. Renewed interest has arisen recently due to developments in the technology of super-conducting magnets and the understanding of the physics of weakly-ionized, non-equilibrium plasmas. A problem of particular interest is the reduction of stagnation point heating during atmospheric entry by magnetic deceleration of the flow in the shock layer. For the case of hypersonic flow over a sphere, a reduction in heat flux has been observed with the application of a dipole magnetic field (Poggie and Gaitonde, AIAA Paper 2001-0196). The Hall effect has a detrimental influence on this control scheme, tending to rotate the current vector out of the circumferential direction and to reduce the impact of the applied magnetic field on the fluid. In the present work we re-examine this problem by using modern computational methods to simulate flow past a hemispherical-nosed vehicle in which a axially-oriented magnetic dipole has been placed. The deleterious effects of the Hall current are characterized, and are observed to diminish when the surface of the vehicle is conducting.

  4. Hall Thruster Thermal Modeling and Test Data Correlation

    NASA Technical Reports Server (NTRS)

    Myers, James; Kamhawi, Hani; Yim, John; Clayman, Lauren

    2016-01-01

    The life of Hall Effect thrusters are primarily limited by plasma erosion and thermal related failures. NASA Glenn Research Center (GRC) in cooperation with the Jet Propulsion Laboratory (JPL) have recently completed development of a Hall thruster with specific emphasis to mitigate these limitations. Extending the operational life of Hall thursters makes them more suitable for some of NASA's longer duration interplanetary missions. This paper documents the thermal model development, refinement and correlation of results with thruster test data. Correlation was achieved by minimizing uncertainties in model input and recognizing the relevant parameters for effective model tuning. Throughout the thruster design phase the model was used to evaluate design options and systematically reduce component temperatures. Hall thrusters are inherently complex assemblies of high temperature components relying on internal conduction and external radiation for heat dispersion and rejection. System solutions are necessary in most cases to fully assess the benefits and/or consequences of any potential design change. Thermal model correlation is critical since thruster operational parameters can push some components/materials beyond their temperature limits. This thruster incorporates a state-of-the-art magnetic shielding system to reduce plasma erosion and to a lesser extend power/heat deposition. Additionally a comprehensive thermal design strategy was employed to reduce temperatures of critical thruster components (primarily the magnet coils and the discharge channel). Long term wear testing is currently underway to assess the effectiveness of these systems and consequently thruster longevity.

  5. Discharge Oscillations in a Permanent Magnet Cylindrical Hall-Effect Thruster

    NASA Technical Reports Server (NTRS)

    Polzin, K. A.; Sooby, E. S.; Raitses, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    Measurements of the discharge current in a cylindrical Hall thruster are presented to quantify plasma oscillations and instabilities without introducing an intrusive probe into the plasma. The time-varying component of the discharge current is measured using a current monitor that possesses a wide frequency bandwidth and the signal is Fourier transformed to yield the frequency spectra present, allowing for the identification of plasma oscillations. The data show that the discharge current oscillations become generally greater in amplitude and complexity as the voltage is increased, and are reduced in severity with increasing flow rate. The breathing mode ionization instability is identified, with frequency as a function of discharge voltage not increasing with discharge voltage as has been observed in some traditional Hall thruster geometries, but instead following a scaling similar to a large-amplitude, nonlinear oscillation mode recently predicted in for annular Hall thrusters. A transition from lower amplitude oscillations to large relative fluctuations in the oscillating discharge current is observed at low flow rates and is suppressed as the mass flow rate is increased. A second set of peaks in the frequency spectra are observed at the highest propellant flow rate tested. Possible mechanisms that might give rise to these peaks include ionization instabilities and interactions between various oscillatory modes.

  6. Resistive and Hall weighting functions in three dimensions

    NASA Astrophysics Data System (ADS)

    Koon, D. W.; Knickerbocker, C. J.

    1998-10-01

    The authors extend their study of the effect of macroscopic impurities on resistive and Hall measurements to include objects of finite thickness. The effect of such impurities is calculated for a series of rectangular parallelepipeds with two current and two voltage contacts on the corners of one square face. The weighting functions display singularities near these contacts, but these are shown to vanish in the two-dimensional limit, in agreement with previous results. Finally, it is shown that while Hall measurements principally sample the plane of the electrodes, resistivity measurements sample more of the interior of an object of finite thickness.

  7. Computed versus measured ion velocity distribution functions in a Hall effect thruster

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Garrigues, L.; CNRS, LAPLACE, F-31062 Toulouse; Mazouffre, S.

    2012-06-01

    We compare time-averaged and time-varying measured and computed ion velocity distribution functions in a Hall effect thruster for typical operating conditions. The ion properties are measured by means of laser induced fluorescence spectroscopy. Simulations of the plasma properties are performed with a two-dimensional hybrid model. In the electron fluid description of the hybrid model, the anomalous transport responsible for the electron diffusion across the magnetic field barrier is deduced from the experimental profile of the time-averaged electric field. The use of a steady state anomalous mobility profile allows the hybrid model to capture some properties like the time-averaged ion meanmore » velocity. Yet, the model fails at reproducing the time evolution of the ion velocity. This fact reveals a complex underlying physics that necessitates to account for the electron dynamics over a short time-scale. This study also shows the necessity for electron temperature measurements. Moreover, the strength of the self-magnetic field due to the rotating Hall current is found negligible.« less

  8. Superconducting quantum spin-Hall systems with giant orbital g-factors

    NASA Astrophysics Data System (ADS)

    Hankiewicz, Ewelina; Reinthaler, Rolf; Tkachov, Grigory

    Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. Here, we describe a novel superconducting quantum spin-Hall effect (quantum spin Hall system in the proximity to the s-wave superconductor and in the orbital in-plane magnetic field), which is protected against elastic backscattering by combined time-reversal and particle-hole symmetry. This effect is characterized by spin-polarized edge states, which can be manipulated in weak magnetic fields due to a giant effective orbital g-factor, allowing the generation of spin currents. The phenomenon provides a novel solution to the outstanding challenge of detecting the spin-polarization of the edge states. Here we propose the detection of the edge polarization in the three-terminal junction using unusual transport properties of superconducting quantum Hall-effect: a non-monotonic excess current and a zero-bias conductance splitting. We thank for the financial support the German Science Foundation (DFG), Grants No HA 5893/4-1 within SPP 1666, HA5893/5-2 within FOR1162 and TK60/1-1 (G.T.), as well the ENB graduate school ``Topological insulators''.

  9. Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers

    NASA Astrophysics Data System (ADS)

    Sekhar Das, Sudhansu; Senthil Kumar, M.

    2017-03-01

    SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (1 1 0) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R\\text{hs}\\text{A} ) was observed upon reducing the t Fe from 300 to 50 Å. The maximum value of R\\text{hs}\\text{A}   =  2.3 Ω observed for t Fe  =  50 Å sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R\\text{hs}\\text{A} was observed in sandwiched Fe (50 Å) film. Scaling law suggests that the R s follows the longitudinal resistivity (ρ) as, {{R}\\text{s}}\\propto {ρ1.9} , suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.

  10. Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

    2018-03-01

    Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

  11. Hall viscosity of a chiral two-orbital superconductor at finite temperatures

    NASA Astrophysics Data System (ADS)

    Yazdani-Hamid, Meghdad; Shahzamanian, Mohammad Ali

    2018-06-01

    The Hall viscosity known as the anti-symmetric part of the viscosity fourth-rank tensor. Such dissipationless response which appears for systems with broken time reversal symmetry. We calculate this non-dissipative quantity for a chiral two-orbital superconductor placed in a viscoelastic magnetic field using the linear response theory and apply our calculations to the putative multiband chiral superconductor Sr2RuO4. The chirality origin of a multiband superconductor arises from the interorbital coupling of the superconducting state. This feature leads to the robustness of the Hall viscosity against temperature and impurity effects. We study the temperature effect on the Hall viscosity at the one-loop approximation.

  12. Spin Hall driven domain wall motion in magnetic bilayers coupled by a magnetic oxide interlayer

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Furuta, Masaki; Zhu, Jian-Gang Jimmy

    2018-05-01

    mCell, previously proposed by our group, is a four-terminal magnetoresistive device with isolated write- and read-paths for all-spin logic and memory applications. A mCell requires an electric-insulating magnetic layer to couple the spin Hall driven write-path to the magnetic free layer of the read-path. Both paths are magnetic layers with perpendicular anisotropy and their perpendicularly oriented magnetization needs to be maintained with this insertion layer. We have developed a magnetic oxide (FeOx) insertion layer to serve for these purposes. We show that the FeOx insertion layer provides sufficient magnetic coupling between adjacent perpendicular magnetic layers. Resistance measurement shows that this magnetic oxide layer can act as an electric-insulating layer. In addition, spin Hall driven domain wall motion in magnetic bi-layers coupled by the FeOx insertion layer is significantly enhanced compared to that in magnetic single layer; it also requires low voltage threshold that poses possibility for power-efficient device applications.

  13. Spin Hall magnetoresistance in CoFe 2O 4/Pt films

    DOE PAGES

    Wu, Hao; Qintong, Zhang; Caihua, Wan; ...

    2015-05-13

    Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe 2O 4/Pt samples. Cross section transmission electron microscope results prove that the CoFe 2O 4 film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. Lastly, these results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe 2O 4 as a new typemore » of magnetic insulator.« less

  14. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

    DOE PAGES

    Chen, Sung-Ping; Huang, Zhi-Quan; Crisostomo, Christian P.; ...

    2016-08-10

    Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAHmore » effect.« less

  15. Concert halls with strong lateral reflections enhance musical dynamics.

    PubMed

    Pätynen, Jukka; Tervo, Sakari; Robinson, Philip W; Lokki, Tapio

    2014-03-25

    One of the most thrilling cultural experiences is to hear live symphony-orchestra music build up from a whispering passage to a monumental fortissimo. The impact of such a crescendo has been thought to depend only on the musicians' skill, but here we show that interactions between the concert-hall acoustics and listeners' hearing also play a major role in musical dynamics. These interactions contribute to the shoebox-type concert hall's established success, but little prior research has been devoted to dynamic expression in this three-part transmission chain as a complete system. More forceful orchestral playing disproportionately excites high frequency harmonics more than those near the note's fundamental. This effect results in not only more sound energy, but also a different tone color. The concert hall transmits this sound, and the room geometry defines from which directions acoustic reflections arrive at the listener. Binaural directional hearing emphasizes high frequencies more when sound arrives from the sides of the head rather than from the median plane. Simultaneously, these same frequencies are emphasized by higher orchestral-playing dynamics. When the room geometry provides reflections from these directions, the perceived dynamic range is enhanced. Current room-acoustic evaluation methods assume linear behavior and thus neglect this effect. The hypothesis presented here is that the auditory excitation by reflections is emphasized with an orchestra forte most in concert halls with strong lateral reflections. The enhanced dynamic range provides an explanation for the success of rectangularly shaped concert-hall geometry.

  16. Universal DC Hall conductivity of Jain's state ν = N/2N +/- 1

    NASA Astrophysics Data System (ADS)

    Nguyen, Dung; Son, Dam

    We present the Fermi-liquid theory of the fractional quantum Hall effect to describe Jain's states with filling fraction ν =N/2 N +/- 1 , that are near half filling. We derive the DC Hall conductivity σH (t) in closed form within the validity of our model. The results show that, without long range interaction, DC Hall conductivity has the universal form which doesn't depend on the detail of short range Landau's parameters Fn. When long range interaction is included, DC Hall conductivity depends on both long range interaction and Landau's parameters. We also analyze the relation between DC Hall conductivity and static structure factor. This work was supported by the Chicago MRSEC, which is funded by NSF through Grant DMR-1420709.

  17. Hall effect in high- Tc Y 1Ba 2Cu 3O 7-δ superconductor

    NASA Astrophysics Data System (ADS)

    Vezzoli, G. C.; Burke, T.; Moon, B. M.; Lalevic, B.; Safari, A.; Sundar, H. G. K.; Bonometti, R.; Alexander, C.; Rau, C.; Waters, K.

    1989-04-01

    We have performed point-by-point and continuous Hall effect experiments as a function of temperature in polycrystalline Y 1Ba 2Cu 3O 7-δ. We have shown that the positive Hall constant shows an abrupt increase upon decreasing temperature at a value just above Tc. This temperature corresponds to where the resistance versus temperature data deviates from linearity. At very high fields of 6.8 and 15 T we observe a subsequent decrease in RH. We interpret these data as supportive of a contribution toward the superconductivity mechanism arising from internal excitions or change transfer excitations such that the bound exciton concentration increases near Tc at the expense of positive carries which are reflected in both bound and free holes.

  18. Diagnostics of Plasma Propulsion Devices

    NASA Astrophysics Data System (ADS)

    Cappelli, Mark A.

    1998-11-01

    Plasma rockets are rapidly emerging as critical technologies in future space flight. These devices take on various forms, ranging from electro-thermal to electromagnetic accelerators, generally categorized by the method in which electrical energy is converted to thrust. As is the case in many plasma devices, non-intrusive optical (emission, or laser-based) diagnostics is an essential element in the characterization of these plasma sources, as access to the discharges in these plasma engines is often limited. Furthermore, laser-based diagnostics offer additional benefits, including improved spatial resolution, and can provide state-specific measurements of species densities, velocities and energy distributions. In recent years, we have developed and applied a variety of emission and laser-based diagnostics strategies to the characterization of arcjet plasma and closed-drift xenon Hall plasma accelerators. Both of these types of plasma propulsion devices are of immediate interest to the space propulsion community, and are under varying stages of development. Arcjet thrusters have unique properties, with strong plasma density, temperature and velocity gradients, which enhance the coupling between the gasdynamic and plasma physics. Closed-drift Hall plasma thrusters are low density electrostatic devices that are inherently turbulent, and exhibit varying degrees of anomalous cross-field electron transport. Our most extensive, collective effort has been to apply laser-induced fluorescence, Doppler-free laser absorption, and Raman scattering to the characterization of hydrogen and helium arcjet flows. Detailed measurements of velocity, temperatures, and electron densities are compared to the results of magneto-hydrodynamic flowfield simulations. The results show that while the simulations capture many aspects of the flow, there are still some unresolved discrepancies. The database established for Hall thrusters is less extensive, as the laser absorption spectroscopy of

  19. Quantum Anomalous Hall Effect in Low-buckled Honeycomb Lattice with In-plane Magnetization

    NASA Astrophysics Data System (ADS)

    Ren, Yafei; Pan, Hui; Yang, Fei; Li, Xin; Qiao, Zhenhua; Zhenhua Qiao's Group Team; Hui Pan's Group Team

    With out-of-plane magnetization, the quantum anomalous Hall effect has been extensively studied in quantum wells and two-dimensional atomic crystal layers. Here, we investigate the possibility of realizing quantum anomalous Hall effect (QAHE) in honeycomb lattices with in-plane magnetization. We show that the QAHE can only occur in low-buckled honeycomb lattice where both intrinsic and intrinsic Rashba spin-orbit coupling appear spontaneously. The extrinsic Rashba spin-orbit coupling is detrimental to this phase. In contrast to the out-of-plane magnetization induced QAHE, the QAHE from in-plane magnetization is achieved in the vicinity of the time reversal symmetric momenta at M points rather than Dirac points. In monolayer case, the QAHE can be characterized by Chern number  = +/- 1 whereas additional phases with Chern number  = +/- 2 appear in chiral stacked bilayer system. The Chern number strongly depends on the orientation of the magnetization. The bilayer system also provides additional tunability via out-of-plane electric field, which can reduce the critical magnetization strength required to induce QAHE. It can also lead to topological phase transitions from  = +/- 2 to +/- 1 and finally to 0 Equal contribution from Yafei Ren and Hui Pan.

  20. Hall Effect–Mediated Magnetic Flux Transport in Protoplanetary Disks

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bai, Xue-Ning; Stone, James M.

    2017-02-10

    The global evolution of protoplanetary disks (PPDs) has recently been shown to be largely controlled by the amount of poloidal magnetic flux threading the disk. The amount of magnetic flux must also coevolve with the disk, as a result of magnetic flux transport, a process that is poorly understood. In weakly ionized gas as in PPDs, magnetic flux is largely frozen in the electron fluid, except when resistivity is large. When the disk is largely laminar, we show that the relative drift between the electrons and ions (the Hall drift), and the ions and neutral fluids (ambipolar drift) can playmore » a dominant role on the transport of magnetic flux. Using two-dimensional simulations that incorporate the Hall effect and ambipolar diffusion (AD) with prescribed diffusivities, we show that when large-scale poloidal field is aligned with disk rotation, the Hall effect rapidly drags magnetic flux inward at the midplane region, while it slowly pushes flux outward above/below the midplane. This leads to a highly radially elongated field configuration as a global manifestation of the Hall-shear instability. This field configuration further promotes rapid outward flux transport by AD at the midplane, leading to instability saturation. In quasi-steady state, magnetic flux is transported outward at approximately the same rate at all heights, and the rate is comparable to the Hall-free case. For anti-aligned field polarity, the Hall effect consistently transports magnetic flux outward, leading to a largely vertical field configuration in the midplane region. The field lines in the upper layer first bend radially inward and then outward to launch a disk wind. Overall, the net rate of outward flux transport is about twice as fast as that of the aligned case. In addition, the rate of flux transport increases with increasing disk magnetization. The absolute rate of transport is sensitive to disk microphysics, which remains to be explored in future studies.« less

  1. 50 KW Class Krypton Hall Thruster Performance

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.; Manzella, David H.

    2003-01-01

    The performance of a 50-kilowatt-class Hall thruster designed for operation on xenon propellant was measured using kryton propellant. The thruster was operated at discharge power levels ranging from 6.4 to 72.5 kilowatts. The device produced thrust ranging from 0.3 to 2.5 newtons. The thruster was operated at discharge voltages between 250 and 1000 volts. At the highest anode mass flow rate and discharge voltage and assuming a 100 percent singly charged condition, the discharge specific impulse approached the theoretical value. Discharge specific impulse of 4500 seconds was demonstrated at a discharge voltage of 1000 volts. The peak discharge efficiency was 64 percent at 650 volts.

  2. Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

    NASA Astrophysics Data System (ADS)

    Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

    2018-05-01

    The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

  3. The Effects of Insulator Wall Material on Hall Thruster Discharges: A Numerical Study

    DTIC Science & Technology

    2001-01-03

    An investigation was undertaken to determine how the choice of insulator wall material inside a Hall thruster discharge channel might affect thruster operation. In order to study this, an evolved hybrid particle-in-cell (PIC) numerical Hall thruster model, HPHall, was used. HPHall solves a set of quasi-one-dimensional fluid equations for electrons and tracks heavy particles using a PIC method.

  4. Numerical study of influence of hydrogen backflow on krypton Hall effect thruster plasma focusing

    NASA Astrophysics Data System (ADS)

    Yan, Shilin; Ding, Yongjie; Wei, Liqiu; Hu, Yanlin; Li, Jie; Ning, Zhongxi; Yu, Daren

    2017-03-01

    The influence of backflow hydrogen on plasma plume focusing of a krypton Hall effect thruster is studied via a numerical simulation method. Theoretical analysis indicates that hydrogen participates in the plasma discharge process, changes the potential and ionization distribution in the thruster discharge cavity, and finally affects the plume focusing within a vacuum vessel.

  5. Particle-in-cell numerical simulations of a cylindrical Hall thruster with permanent magnets

    NASA Astrophysics Data System (ADS)

    Miranda, Rodrigo A.; Martins, Alexandre A.; Ferreira, José L.

    2017-10-01

    The cylindrical Hall thruster (CHT) is a propulsion device that offers high propellant utilization and performance at smaller dimensions and lower power levels than traditional Hall thrusters. In this paper we present first results of a numerical model of a CHT. This model solves particle and field dynamics self-consistently using a particle-in-cell approach. We describe a number of techniques applied to reduce the execution time of the numerical simulations. The specific impulse and thrust computed from our simulations are in agreement with laboratory experiments. This simplified model will allow for a detailed analysis of different thruster operational parameters and obtain an optimal configuration to be implemented at the Plasma Physics Laboratory at the University of Brasília.

  6. Performance of a Cylindrical Hall-Effect Thruster with Magnetic Field Generated by Permanent Magnets

    NASA Technical Reports Server (NTRS)

    Polzin, Kurt A.; Raitses, Yevgeny; Fisch, Nathaniel J.

    2008-01-01

    While Hall thrusters can operate at high efficiency at kW power levels, it is difficult to construct one that operates over a broad envelope down to 100W while maintaining an efficiency of 45- 55%. Scaling to low power while holding the main dimensionless parameters constant requires a decrease in the thruster channel size and an increase in the magnetic field strength. Increasing the magnetic field becomes technically challenging since the field can saturate the miniaturized inner components of the magnetic circuit and scaling down the magnetic circuit leaves very little room for magnetic pole pieces and heat shields. An alternative approach is to employ a cylindrical Hall thruster (CHT) geometry. Laboratory model CHTs have operated at power levels ranging from the order of 50 Watts up to 1 kW. These thrusters exhibit performance characteristics which are comparable to conventional, annular Hall thrusters of similar size. Compared to the annular Hall thruster, the CHT has a lower insulator surface area to discharge chamber volume ratio. Consequently, there is the potential for reduced wall losses in the channel of a CHT, and any reduction in wall losses should translate into lower channel heating rates and reduced erosion. This makes the CHT geometry promising for low-power applications. Recently, a CHT that uses permanent magnets to produce the magnetic field topology was tested. This thruster has the promise of reduced power consumption over previous CHT iterations that employed electromagnets. Data are presented for two purposes: to expose the effect different controllable parameters have on the discharge and to summarize performance measurements (thrust, Isp, efficiency) obtained using a thrust stand. These data are used to gain insight into the thruster's operation and to allow for quantitative comparisons between the permanent magnet CHT and the electromagnet CHT.

  7. Hollow Cathode Assembly Development for the HERMeS Hall Thruster

    NASA Technical Reports Server (NTRS)

    Sarver-Verhey, Timothy R.; Kamhawi, Hani; Goebel, Dan M.; Polk, James E.; Peterson, Peter Y.; Robinson, Dale A.

    2016-01-01

    To support the operation of the HERMeS 12.5 kW Hall Thruster for NASA's Asteroid Redirect Robotic Mission, hollow cathodes using emitters based on barium oxide impregnate and lanthanum hexaboride are being evaluated through wear-testing, performance characterization, plasma modeling, and assessment of system implementation concerns. This paper will present the development approach used to assess the cathode emitter options. A 2,000-hour wear-test of development model barium-oxide-based (BaO) hollow cathode is being performed as part of the development plan. The cathode was operated with an anode that simulates the HERMeS hall thruster operating environment. Cathode discharge performance has been stable with the device accumulating 740 hours at the time of this report. Cathode operation (i.e. discharge voltage and orifice temperature) was repeatable during period variation of discharge current and flow rate. The details of the cathode assembly operation during the wear-test will be presented.

  8. Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

    NASA Astrophysics Data System (ADS)

    Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

    The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

  9. Diffusion in plasma: The Hall effect, compositional waves, and chemical spots

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Urpin, V., E-mail: Vadim.urpin@uv.es

    2017-03-15

    Diffusion caused by a combined influence of the electric current and Hall effect is considered, and it is argued that such diffusion can form inhomogeneities of a chemical composition in plasma. The considered mechanism can be responsible for the formation of element spots in laboratory and astrophysical plasmas. This current-driven diffusion can be accompanied by propagation of a particular type of waves in which the impurity number density oscillates alone. These compositional waves exist if the magnetic pressure in plasma is much greater than the gas pressure.

  10. Jefferson Lab Experimental Hall C

    NASA Astrophysics Data System (ADS)

    Carlini, Roger D.

    1996-10-01

    Jefferson Lab's Hall C went into initial operation in November 1995. The hall has a short orbit spectrometer (SOS) for short-lived particles such as pions and kaons and a high-momentum spectrometer (HMS) usually used for electrons. The SOS can also be used for protons. The HMS can range to 7 GeV/c. Both the SOS and HMS have typical resolutions of (10-3). Experiments for this hall range from measuring the neutron electric form factor, to color transparency, to creating strange nuclei. This paper will present the optical capabilities of the spectrometers, the parameters of the detection systems, and the overall beam line characteristics of the hall as determined from the results from the recent physics experiments along with the upcoming experimental schedule. Additional information is available at URL http://www.cebaf.gov/hallc.html.

  11. New pathways towards efficient metallic spin Hall spintronics

    DOE PAGES

    Jungfleisch, Matthias Benjamin; Zhang, Wei; Jiang, Wanjun; ...

    2015-11-16

    Spin Hall effects (SHEs) interconvert spin- and charge currents due to spin- orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here, we review recent experimental efforts exploring efficient spin Hall detector materials as well as new approaches to drive collective magnetization dynamics and to manipulate spin textures by SHEs. As a result, these studies are also expected to impact practical spintronics applications beyond their significance in fundamental research.

  12. High Power Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Jankovsky, Robert; Tverdokhlebov, Sergery; Manzella, David

    1999-01-01

    The development of Hall thrusters with powers ranging from tens of kilowatts to in excess of one hundred kilowatts is considered based on renewed interest in high power. high thrust electric propulsion applications. An approach to develop such thrusters based on previous experience is discussed. It is shown that the previous experimental data taken with thrusters of 10 kW input power and less can be used. Potential mass savings due to the design of high power Hall thrusters are discussed. Both xenon and alternate thruster propellant are considered, as are technological issues that will challenge the design of high power Hall thrusters. Finally, the implications of such a development effort with regard to ground testing and spacecraft intecrati'on issues are discussed.

  13. Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

    PubMed Central

    Jacak, Janusz; Jacak, Lucjan

    2016-01-01

    The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bilayer graphene is explained. Experimentally observed hierarchy of FQHE in the first and second Landau levels in monolayer graphene and in the zeroth Landau level in bilayer graphene is beyond the conventional composite fermion interpretation but fits to the presented nonlocal topology commensurability condition. PMID:27877866

  14. Robust integer and fractional helical modes in the quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Ronen, Yuval; Cohen, Yonatan; Banitt, Daniel; Heiblum, Moty; Umansky, Vladimir

    2018-04-01

    Electronic systems harboring one-dimensional helical modes, where spin and momentum are locked, have lately become an important field of their own. When coupled to a conventional superconductor, such systems are expected to manifest topological superconductivity; a unique phase hosting exotic Majorana zero modes. Even more interesting are fractional helical modes, yet to be observed, which open the route for realizing generalized parafermions. Possessing non-Abelian exchange statistics, these quasiparticles may serve as building blocks in topological quantum computing. Here, we present a new approach to form protected one-dimensional helical edge modes in the quantum Hall regime. The novel platform is based on a carefully designed double-quantum-well structure in a GaAs-based system hosting two electronic sub-bands; each tuned to the quantum Hall effect regime. By electrostatic gating of different areas of the structure, counter-propagating integer, as well as fractional, edge modes with opposite spins are formed. We demonstrate that, due to spin protection, these helical modes remain ballistic over large distances. In addition to the formation of helical modes, this platform can serve as a rich playground for artificial induction of compounded fractional edge modes, and for construction of edge-mode-based interferometers.

  15. Surface and 3D Quantum Hall Effects from Engineering of Exceptional Points in Nodal-Line Semimetals

    NASA Astrophysics Data System (ADS)

    Molina, Rafael A.; González, José

    2018-04-01

    We show that, under a strong magnetic field, a 3D nodal-line semimetal is driven into a topological insulating phase in which the electronic transport takes place at the surface of the material. When the magnetic field is perpendicular to the nodal ring, the surface states of the semimetal are transmuted into Landau states which correspond to exceptional points, i.e., branch points in the spectrum of a non-Hermitian Hamiltonian which arise upon the extension to complex values of the momentum. The complex structure of the spectrum then allows us to express the number of zero-energy flat bands in terms of a new topological invariant counting the number of exceptional points. When the magnetic field is parallel to the nodal ring, we find that the bulk states are built from the pairing of surfacelike evanescent waves, giving rise to a 3D quantum Hall effect with a flat level of Landau states residing in parallel 2D slices of the 3D material. The Hall conductance is quantized in either case in units of e2/h , leading in the 3D Hall effect to a number of channels growing linearly with the section of the surface and opening the possibility to observe a macroscopic chiral current at the surface of the material.

  16. Redistributing Chern numbers and quantum Hall transitions in multi-band lattices

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Zhai, Z. Y.; Jiang, C.

    2018-07-01

    We numerically study the integer quantum Hall effect (IQHE) on m-band lattices. With continuous modulating the next-nearest-neighbor hopping integral t' , it is found that the full band is divided into 2 m - 1 regions. There are m - 1 critical regions with pseudogaps induced by the merging between the two adjacent subbands, where both Chern numbers of the correlating Landau subbands and the corresponding Hall plateau are not well-defined. The other m regions with different well-defined Chern numbers are separated by the above m - 1 critical regions. Due to the redistributing Chern numbers of system induced by the merging of subbands, the Hall conductance exhibits a peculiar phase transition, which is characterized by the direct change of Hall plateau state.

  17. Exploring 4D quantum Hall physics with a 2D topological charge pump

    NASA Astrophysics Data System (ADS)

    Lohse, Michael; Schweizer, Christian; Price, Hannah M.; Zilberberg, Oded; Bloch, Immanuel

    2018-01-01

    The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant—the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

  18. Exploring 4D quantum Hall physics with a 2D topological charge pump.

    PubMed

    Lohse, Michael; Schweizer, Christian; Price, Hannah M; Zilberberg, Oded; Bloch, Immanuel

    2018-01-03

    The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant-the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

  19. Nonlocal electrical detection of spin accumulation generated by anomalous Hall effect in mesoscopic N i81F e19 films

    NASA Astrophysics Data System (ADS)

    Qin, Chuan; Chen, Shuhan; Cai, Yunjiao; Kandaz, Fatih; Ji, Yi

    2017-10-01

    Spin accumulation generated by the anomalous Hall effect (AHE) in mesoscopic ferromagnetic N i81F e19 (permalloy, Py) films is detected electrically by a nonlocal method. The reciprocal phenomenon, the inverse spin Hall effect (ISHE), can also be generated and detected all electrically in the same structure. For accurate quantitative analysis, a series of nonlocal AHE/ISHE structures and supplementary structures are fabricated on each sample substrate to account for statistical variations and to accurately determine all essential physical parameters in situ. By exploring Py thicknesses of 4, 8, and 12 nm, the Py spin diffusion length λPy is found to be much shorter than the film thicknesses. The product of λPy and the Py spin Hall angle αSH is determined to be independent of thickness and resistivity: αSHλPy=(0.066 ±0.009 ) nm at 5 K and (0.041 ±0.010 )nm at 295 K. These values are comparable to those obtained from mesoscopic Pt films.

  20. NASA HERMeS Hall Thruster Electrical Configuration Characterization

    NASA Technical Reports Server (NTRS)

    Peterson, Peter; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

    2016-01-01

    NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This presentation will cover the electrical configuration testing of the TDU-1 HERMeS Hall thruster in NASA Glenn Research Centers Vacuum Facility 5. The three electrical configurations examined are the thruster body tied to facility ground, thruster floating, and finally the thruster body electrically tied to cathode common. The TDU-1 HERMeS was configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

  1. Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

    2017-11-01

    Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

  2. Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

    NASA Astrophysics Data System (ADS)

    Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

    2017-11-01

    The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

  3. Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet.

    PubMed

    Hennel, Szymon; Braem, Beat A; Baer, Stephan; Tiemann, Lars; Sohi, Pirouz; Wehrli, Dominik; Hofmann, Andrea; Reichl, Christian; Wegscheider, Werner; Rössler, Clemens; Ihn, Thomas; Ensslin, Klaus; Rudner, Mark S; Rosenow, Bernd

    2016-04-01

    In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

  4. L'effet Hall Quantique

    NASA Astrophysics Data System (ADS)

    Samson, Thomas

    facteur d'occupation (nombre d'electrons/degenerescence des etats de Dingle) superieure a un, c'est-a-dire en absence d'interaction electron-electron, il nous sera facile d'evaluer cette conductivite a la limite d'une temperature nulle et de demontrer qu'elle tend vers l'une des valeurs quantiques qe^2/h conformement a l'effet Hall quantique entier. Cependant, pour une valeur du facteur d'occupation inferieure a un, c'est-a-dire en presence d'interaction electron-electron, nous ne pourrons evaluer cette limite et obtenir les resultats escomptes a cause de l'impossibilite de determiner l'un des termes impliques. Neanmoins, ce dernier etant de nature statistique, il pourra etre aisement mis en fonction du propagateur du gaz d'electrons dont on doit maintenant determiner une expression en regime effet Hall quantique fractionnaire. Apres avoir demontre l'impuissance de la theorie des perturbations, basee sur le theoreme de Wick et la technique des diagrammes de Feynman, a accomplir cette tache correctement, nous proposons une seconde methode. Celle -ci fait appel au formalisme de l'integrale fonctionnelle et a l'utilisation d'une transformation de Hubbard-Stratonovich generalisee permettant de substituer a l'interaction a deux-corps une interaction effective a un-corps. L'expression finale obtenue bien que non completement resolue, devrait pouvoir etre estimee par une bonne approximation analytique ou au pire numeriquement.

  5. Optical determination of Shockley-Read-Hall and interface recombination currents in hybrid perovskites

    PubMed Central

    Sarritzu, Valerio; Sestu, Nicola; Marongiu, Daniela; Chang, Xueqing; Masi, Sofia; Rizzo, Aurora; Colella, Silvia; Quochi, Francesco; Saba, Michele; Mura, Andrea; Bongiovanni, Giovanni

    2017-01-01

    Metal-halide perovskite solar cells rival the best inorganic solar cells in power conversion efficiency, providing the outlook for efficient, cheap devices. In order for the technology to mature and approach the ideal Shockley-Queissier efficiency, experimental tools are needed to diagnose what processes limit performances, beyond simply measuring electrical characteristics often affected by parasitic effects and difficult to interpret. Here we study the microscopic origin of recombination currents causing photoconversion losses with an all-optical technique, measuring the electron-hole free energy as a function of the exciting light intensity. Our method allows assessing the ideality factor and breaks down the electron-hole recombination current into bulk defect and interface contributions, providing an estimate of the limit photoconversion efficiency, without any real charge current flowing through the device. We identify Shockley-Read-Hall recombination as the main decay process in insulated perovskite layers and quantify the additional performance degradation due to interface recombination in heterojunctions. PMID:28317883

  6. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  7. Hall Thruster Plume Measurements On-Board the Russian Express Satellites

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jankovsky, Robert; Elliott, Frederick; Mikellides, Ioannis; Jongeward, Gary; Allen, Doug

    2001-01-01

    The operation of North-South and East-West station-keeping Hall thruster propulsion systems on-board two Russian Express-A geosynchronous communication satellites were investigated through a collaborative effort with the manufacturer of the spacecraft. Over 435 firings of 16 different thrusters with a cumulative run time of over 550 hr were reported with no thruster failures. Momentum transfer due to plume impingement was evaluated based on reductions in the effective thrust of the SPT-100 thrusters and induced disturbance torques determined based on attitude control system data and range data. Hall thruster plasma plume effects on the transmission of C-band and Ku-band communication signals were shown to be negligible. On-orbit ion current density measurements were made and subsequently compared to predictions and ground test data. Ion energy, total pressure, and electric field strength measurements were also measured on-orbit. The effect of Hall thruster operation on solar array performance over several months was investigated. A subset of these data is presented.

  8. Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

    PubMed Central

    Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

    2015-01-01

    Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

  9. Residence Hall Seating That Works.

    ERIC Educational Resources Information Center

    Wiens, Janet

    2003-01-01

    Describes the seating chosen for residence halls at the Massachusetts Institute of Technology and the University of New England. The seating required depends on ergonomics, aesthetics, durability, cost, and code requirements. In addition, residence halls must have a range of seating types to accommodate various uses. (SLD)

  10. Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

    2018-04-01

    We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

  11. 75 FR 22770 - Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-30

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13652-000-Montana] Gary E. Hall and Rita Hall; Notice of Availability of Environmental Assessment April 22, 2010. In accordance with the National Environmental Policy Act of 1969, as amended, and the Federal Energy Regulatory...

  12. Single electron dynamics in a Hall thruster electromagnetic field profile

    NASA Astrophysics Data System (ADS)

    Marini, Samuel; Pakter, Renato

    2017-05-01

    In this work, the single electron dynamics in a simplified three dimensional Hall thruster model is studied. Using Hamiltonian formalism and the concept of limiting curves, one is able to determine confinement conditions for the electron in the acceleration channel. It is shown that as a given parameter of the electromagnetic field is changed, the particle trajectory may transit from regular to chaotic without affecting the confinement, which allows one to make a detailed analysis of the role played by the chaos. The ionization volume is also computed, which measures the probability of an electron to ionize background gas atoms. It is found that there is a great correlation between chaos and increased effective ionization volume. This indicates that a complex dynamical behavior may improve the device efficiency by augmenting the ionization capability of each electron, requiring an overall lower electron current.

  13. Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

    PubMed Central

    Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

    2014-01-01

    Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

  14. Effect of matching between the magnetic field and channel length on the performance of low sputtering Hall thrusters

    NASA Astrophysics Data System (ADS)

    Ding, Yongjie; Boyang, Jia; Sun, Hezhi; Wei, Liqiu; Peng, Wuji; Li, Peng; Yu, Daren

    2018-02-01

    Discharge characteristics of a non-wall-loss Hall thruster were studied under different channel lengths using a design based on pushing a magnetic field through a double permanent magnet ring. The effect of different magnetic field intensities and channel lengths on ionization, efficiency, and plume divergence angle were studied. The experimental results show that propellant utilization is improved for optimal matching between the magnetic field and channel length. While matching the magnetic field and channel length, the ionization position of the neutral gas changes. The ion flow is effectively controlled, allowing the thrust force, specific impulse, and efficiency to be improved. Our study shows that the channel length is an important design parameter to consider for improving the performance of non-wall-loss Hall thrusters.

  15. Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation

    NASA Astrophysics Data System (ADS)

    Borders, William A.; Akima, Hisanao; Fukami, Shunsuke; Moriya, Satoshi; Kurihara, Shouta; Horio, Yoshihiko; Sato, Shigeo; Ohno, Hideo

    2017-01-01

    We demonstrate associative memory operations reminiscent of the brain using nonvolatile spintronics devices. Antiferromagnet-ferromagnet bilayer-based Hall devices, which show analogue-like spin-orbit torque switching under zero magnetic fields and behave as artificial synapses, are used. An artificial neural network is used to associate memorized patterns from their noisy versions. We develop a network consisting of a field-programmable gate array and 36 spin-orbit torque devices. An effect of learning on associative memory operations is successfully confirmed for several 3 × 3-block patterns. A discussion on the present approach for realizing spintronics-based artificial intelligence is given.

  16. The Enhancement of spin Hall torque efficiency and Reduction of Gilbert damping in spin Hall metal/normal metal/ferromagnetic trilayers

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh-Hai; Pai, Chi-Feng; Ralph, Daniel C.; Buhrman, Robert A.

    2015-03-01

    The spin Hall effect (SHE) in ferromagnet/heavy metal bilayer structures has been demonstrated to be a powerful means for producing pure spin currents and for exerting spin-orbit damping-like and field-like torques on the ferromagnetic layer. Large spin Hall (SH) angles have been reported for Pt, beta-Ta and beta-W films and have been utilized to achieve magnetic switching of in-plane and out-of-plane magnetized nanomagnets, spin torque auto-oscillators, and the control of high velocity domain wall motion. For many of the proposed applications of the SHE it is also important to achieve an effective Gilbert damping parameter that is as low as possible. In general the spin orbit torques and the effective damping are predicted to depend directly on the spin-mixing conductance of the SH metal/ferromagnet interface. This opens up the possibility of tuning these properties with the insertion of a very thin layer of another metal between the SH metal and the ferromagnet. Here we will report on experiments with such trilayer structures in which we have observed both a large enhancement of the spin Hall torque efficiency and a significant reduction in the effective Gilbert damping. Our results indicate that there is considerable opportunity to optimize the effectiveness and energy efficiency of the damping-like torque through engineering of such trilayer structures. Supported in part by NSF and Samsung Electronics Corporation.

  17. The Virtual Lecture Hall: Utilisation, Effectiveness and Student Perceptions

    ERIC Educational Resources Information Center

    Cramer, Kenneth M.; Collins, Kandice R.; Snider, Don; Fawcett, Graham

    2007-01-01

    We presently introduce the Virtual Lecture Hall (VLH), an instructional computer-based platform for delivering Microsoft PowerPoint slides threaded with audio clips for later review. There were 839 male and female university students enrolled in an introductory psychology class who had access to review class lectures via the VLH. This tool was…

  18. The Hall Technique for managing carious primary molars.

    PubMed

    Innes, Nicola; Evans, Dafydd; Hall, Norna

    2009-10-01

    The Hall Technique, a method of managing carious primary molars effectively with preformed metal crowns, without the use of local anaesthesia, caries removal or tooth preparation of any kind, is described.The technique is illustrated with a case report.The evidence underpinning the technique is discussed, along with indications and contra-indications for its use, and details of where clinicians can obtain further information on the technique if they are considering using it. Research evidence has indicated that the Hall Technique is effective in managing dental caries in primary molar teeth when used by General Dental Practitioners, and is preferred by them, their child patients and the children's parents to conventional restorative methods for these teeth.

  19. Measurements of Hk and Ms in thin magnetic films by the angular dependence of the planar Hall effect

    NASA Astrophysics Data System (ADS)

    Vatskicheva, M.; Vatskichev, L.

    1987-11-01

    It is shown that the angular dependences of the planar Hall effect measured with infinite magnetic field and with magnetic field H⩾ Hk have an intersection point and this fact is enough for measuring the anisotropy field Hk applying the method presented by Pastor, Ferreiro and Torres in J. Magn. Magn. Mat. 53 (1986) 349, 62 (1986) 101. The scaling of the Hall tension U proportional to M2s in mV/Am -1 gives a possibility for calculating the Ms-values of the films. These assumptions are verified for NiFe- and NiFeGe films with a uniaxial magnetic anisotropy.

  20. Laurance David Hall.

    PubMed

    Coxon, Bruce

    2011-01-01

    An account is given of the life, scientific contributions, and passing of Laurance David Hall (1938-2009), including his early history and education at the University of Bristol, UK, and the synthesis and NMR spectroscopy of carbohydrates and other natural products during ∼20 years of research and teaching at the University of British Columbia in Vancouver, Canada. Lists of graduate students, post-doctoral fellows, and sabbatical visitors are provided for this period. Following a generous endowment by Dr. Herchel Smith, Professor Hall built a new Department of Medicinal Chemistry at Cambridge University, UK, and greatly expanded his researches into the technology and applications of magnetic resonance imaging (MRI) and zero quantum NMR. MRI technology was applied both to medical problems such as the characterization of cartilage degeneration in knee joints, the measurement of ventricular function, lipid localization in animal models of atherosclerosis, paramagnetic metal complexes of polysaccharides as contrast agents, and studies of many other anatomical features, but also to several aspects of materials analysis, including food analyses, process control, and the elucidation of such physical phenomena as the flow of liquids through porous media, defects in concrete, and the visualization of fungal damage to wood. Professor Hall's many publications, patents, lectures, and honors and awards are described, and also his successful effort to keep the Asilomar facility in Pacific Grove, California as the alternating venue for the annual Experimental NMR Conference. Two memorial services for Professor Hall are remembered. Copyright © 2011 Elsevier Inc. All rights reserved.

  1. Coupling intensity between discharge and magnetic circuit in Hall thrusters

    NASA Astrophysics Data System (ADS)

    Wei, Liqiu; Yang, Xinyong; Ding, Yongjie; Yu, Daren; Zhang, Chaohai

    2017-03-01

    Coupling oscillation is a newly discovered plasma oscillation mode that utilizes the coupling between the discharge circuit and magnetic circuit, whose oscillation frequency spectrum ranges from several kilohertz to megahertz. The coupling coefficient parameter represents the intensity of coupling between the discharge and magnetic circuits. According to previous studies, the coupling coefficient is related to the material and the cross-sectional area of the magnetic coils, and the magnetic circuit of the Hall thruster. However, in our recent study on coupling oscillations, it was found that the Hall current equivalent position and radius have important effects on the coupling intensity between the discharge and magnetic circuits. This causes a difference in the coupling coefficient for different operating conditions of Hall thrusters. Through non-intrusive methods for measuring the Hall current equivalent radius and the axial position, it is found that with an increase in the discharge voltage and magnetic field intensity, the Hall current equivalent radius increases and its axial position moves towards the exit plane. Thus, both the coupling coefficient and the coupling intensity between the discharge and magnetic circuits increase. Contribution to the Topical Issue "Physics of Ion Beam Sources", edited by Holger Kersten and Horst Neumann.

  2. The first vineyard concert hall in North America

    NASA Astrophysics Data System (ADS)

    Jaffe, Christopher; Rivera, Carlos

    2002-11-01

    The first vineyard or surround concert hall designed and built in the Western Hemisphere is the Sala Nezahualcoyotl in Mexico City. The Hall was completed in 1976 and is part of the Cultural Center at the Universidad Nacional Autonoma de Mexico. The hall was named after a Toltec poet, architect, and musician who lived in the 15th century and was the Renaissance man of his day. In order to provide the familiar traditional sound of the rectangular (shoebox) European Hall, the acoustic designers set the criteria for reverberation times through the frequency spectrum and the Initial Time Delay Gap at every seat in the house to match the measurements taken at the Grosser Musik vereinssaal in Vienna and Boston Symphony Hall. In this paper we discuss the techniques used to create the traditional sound in a vineyard hall and the reaction of musicians and audiences to the completed facility. The Sala was the model for Suntory Hall in Japan which in turn spawned a number of vineyard halls in Japan. Most recently, the vineyard style seems to be appealing to more and more symphonic organizations in Europe and North America.

  3. A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

    PubMed

    Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

    2012-01-01

    Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

  4. The effect of hand hygiene on illness rate among students in university residence halls.

    PubMed

    White, Cindy; Kolble, Robin; Carlson, Rebecca; Lipson, Natasha; Dolan, Mike; Ali, Yusuf; Cline, Mojee

    2003-10-01

    Several studies have indicated a connection between hand sanitization and infection control in numerous settings such as extended care facilities, schools, and hospitals. The purpose of this study was to assess the effectiveness of both a hand-hygiene message campaign and the use of an alcohol gel hand sanitizer in decreasing the incidence of upper-respiratory illness among students living in university residence halls. This study involved a total of 430 students recruited from 4 residence halls during the fall semester at the University of Colorado at the Boulder campus. Dormitories were paired into control and product groups. In the product groups, alcohol gel hand-sanitizer dispensers were installed in every room, bathroom, and dining hall. The data were statistically analyzed for the differences between product and control groups in reported symptoms, illness rates, and absenteeism from classes. The overall increase in hand-hygiene behavior and reduction in symptoms, illness rates, and absenteeism between the product group and control group was statistically significant. Reductions in upper respiratory-illness symptoms ranged from 14.8% to 39.9%. Total improvement in illness rate was 20%. The product group had 43% less missed school/work days. Hand-hygiene practices were improved with increased frequency of handwashing through increasing awareness of the importance of hand hygiene, and the use of alcohol gel hand sanitizer in university dormitories. This resulted in fewer upper respiratory-illness symptoms, lower illness rates, and lower absenteeism.

  5. Turbulence Measurements in a Tropical Zoo Hall

    NASA Astrophysics Data System (ADS)

    Eugster, Werner; Denzler, Basil; Bogdal, Christian

    2017-04-01

    The Masoala rainforest hall of the Zurich Zoo, Switzerland, covers a ground surface area of 10,856 m2 and reaches 30 m in height. With its transparent ETFE foiled roof it provides a tropical climate for a large diversity of plants and animals. In combination with an effort to estimate dry deposition of elemental mercury, we made an attempt to measure turbulent transfer velocity with an ultrasonic anemometer inside the hall. Not surprising, the largest turbulence elements were on the order of the hall dimension. Although the dimensions of the hall seem to be small (200,000 m3) for eddy covariance flux measurements and the air circulation inside the hall was extremely weak, the spectra of wind velocity components and virtual (sonic) temperature obeyed the general statistical description expected under unconstrained outdoor measurement conditions. We will present results from a two-week measurement campaign in the Masoala rainforest hall and make a suggestion for the deposition velocity to be used to estimate dry deposition of atmospheric components to the tropical vegetation surface.

  6. Topological magnon bands and unconventional thermal Hall effect on the frustrated honeycomb and bilayer triangular lattice.

    PubMed

    Owerre, S A

    2017-09-27

    In the conventional ferromagnetic systems, topological magnon bands and thermal Hall effect are due to the Dzyaloshinskii-Moriya interaction (DMI). In principle, however, the DMI is either negligible or it is not allowed by symmetry in some quantum magnets. Therefore, we expect that topological magnon features will not be present in those systems. In addition, quantum magnets on the triangular-lattice are not expected to possess topological features as the DMI or spin-chirality cancels out due to equal and opposite contributions from adjacent triangles. Here, however, we predict that the isomorphic frustrated honeycomb-lattice and bilayer triangular-lattice antiferromagnetic system will exhibit topological magnon bands and topological thermal Hall effect in the absence of an intrinsic DMI. These unconventional topological magnon features are present as a result of magnetic-field-induced non-coplanar spin configurations with nonzero scalar spin chirality. The relevance of the results to realistic bilayer triangular antiferromagnetic materials are discussed.

  7. Chapin Hall Center for Children.

    ERIC Educational Resources Information Center

    Chicago Univ., IL. Chapin Hall Center for Children.

    This document consists of two separate publications: (1) "The Power of Knowing", a brief 12-page description of the Chapin Hall Center for Children, and (2) "Projects and Publications", a 67-page list of the center's projects and publications as of Autumn 1997. "The Power of Knowing" describes the Chapin Hall Center…

  8. Hall Thruster Technology for NASA Science Missions

    NASA Technical Reports Server (NTRS)

    Manzella, David; Oh, David; Aadland, Randall

    2005-01-01

    The performance of a prototype Hall thruster designed for Discovery-class NASA science mission applications was evaluated at input powers ranging from 0.2 to 2.9 kilowatts. These data were used to construct a throttle profile for a projected Hall thruster system based on this prototype thruster. The suitability of such a Hall thruster system to perform robotic exploration missions was evaluated through the analysis of a near Earth asteroid sample return mission. This analysis demonstrated that a propulsion system based on the prototype Hall thruster offers mission benefits compared to a propulsion system based on an existing ion thruster.

  9. Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect

    NASA Astrophysics Data System (ADS)

    Liang, Dong; Degrave, John; Stolt, Matthew; Tokura, Yoshinori; Jin, Song

    2015-03-01

    Skyrmions, novel topologically stable spin vortices, hold promise for next-generation high-density magnetic storage technologies due to their nanoscale domains and ultralow energy consumption. One-dimensional (1D) nanowires are ideal hosts for skyrmions since they not only serve as a natural platform for magnetic racetrack memory devices but also can potentially stabilize skyrmions. We use the topological Hall effect (THE) to study the phase stability and current-driven dynamics of the skyrmions in MnSi nanowires. The THE was observed in an extended magnetic field-temperature window (15 to 30 K), suggesting stabilization of skyrmion phase in nanowires compared with the bulk (27 to 29.5 K). Furthermore, we study skyrmion dynamics in this extended skyrmion phase region and found that under the high current-density of 108-109Am-2 enabled by nanowire geometry, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field. These results open up the exploration of nanowires as an attractive platform for investigating skyrmion physics in 1D systems and exploiting skyrmions in magnetic storage concepts. This work is supported by US National Science Foundation (ECCS-1231916) and JSPS Grant-in-Aid for Scientific Research No. 24224009.

  10. Rule-based fault diagnosis of hall sensors and fault-tolerant control of PMSM

    NASA Astrophysics Data System (ADS)

    Song, Ziyou; Li, Jianqiu; Ouyang, Minggao; Gu, Jing; Feng, Xuning; Lu, Dongbin

    2013-07-01

    Hall sensor is widely used for estimating rotor phase of permanent magnet synchronous motor(PMSM). And rotor position is an essential parameter of PMSM control algorithm, hence it is very dangerous if Hall senor faults occur. But there is scarcely any research focusing on fault diagnosis and fault-tolerant control of Hall sensor used in PMSM. From this standpoint, the Hall sensor faults which may occur during the PMSM operating are theoretically analyzed. According to the analysis results, the fault diagnosis algorithm of Hall sensor, which is based on three rules, is proposed to classify the fault phenomena accurately. The rotor phase estimation algorithms, based on one or two Hall sensor(s), are initialized to engender the fault-tolerant control algorithm. The fault diagnosis algorithm can detect 60 Hall fault phenomena in total as well as all detections can be fulfilled in 1/138 rotor rotation period. The fault-tolerant control algorithm can achieve a smooth torque production which means the same control effect as normal control mode (with three Hall sensors). Finally, the PMSM bench test verifies the accuracy and rapidity of fault diagnosis and fault-tolerant control strategies. The fault diagnosis algorithm can detect all Hall sensor faults promptly and fault-tolerant control algorithm allows the PMSM to face failure conditions of one or two Hall sensor(s). In addition, the transitions between health-control and fault-tolerant control conditions are smooth without any additional noise and harshness. Proposed algorithms can deal with the Hall sensor faults of PMSM in real applications, and can be provided to realize the fault diagnosis and fault-tolerant control of PMSM.

  11. Detection of Short-Waved Spin Waves in Individual Microscopic Spin-Wave Waveguides Using the Inverse Spin Hall Effect.

    PubMed

    Brächer, T; Fabre, M; Meyer, T; Fischer, T; Auffret, S; Boulle, O; Ebels, U; Pirro, P; Gaudin, G

    2017-12-13

    The miniaturization of complementary metal-oxide-semiconductor (CMOS) devices becomes increasingly difficult due to fundamental limitations and the increase of leakage currents. Large research efforts are devoted to find alternative concepts that allow for a larger data-density and lower power consumption than conventional semiconductor approaches. Spin waves have been identified as a potential technology that can complement and outperform CMOS in complex logic applications, profiting from the fact that these waves enable wave computing on the nanoscale. The practical application of spin waves, however, requires the demonstration of scalable, CMOS compatible spin-wave detection schemes in material systems compatible with standard spintronics as well as semiconductor circuitry. Here, we report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm by the inverse spin Hall effect in spin-wave waveguides made from ultrathin Ta/Co 8 Fe 72 B 20 /MgO. These findings open up the path for miniaturized scalable interconnects between spin waves and CMOS and the use of ultrathin films made from standard spintronic materials in magnonics.

  12. Self-induced inverse spin-Hall effect in an iron and a cobalt single-layer films themselves under the ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Kanagawa, Kazunari; Teki, Yoshio; Shikoh, Eiji

    2018-05-01

    The inverse spin-Hall effect (ISHE) is produced even in a "single-layer" ferromagnetic material film. Previously, the self-induced ISHE in a Ni80Fe20 film under the ferromagnetic resonance (FMR) was discovered. In this study, we observed an electromotive force (EMF) in an iron (Fe) and a cobalt (Co) single-layer films themselves under the FMR. As origins of the EMFs in the films themselves, the ISHE was main for Fe and dominant for Co, respectively 2 and 18 times larger than the anomalous Hall effect. Thus, we demonstrated the self-induced ISHE in an Fe and a Co single-layer films themselves under the FMR.

  13. Hall mobility in multicrystalline silicon

    NASA Astrophysics Data System (ADS)

    Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

    2011-08-01

    Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

  14. Mesoscopic Field-Effect-Induced Devices in Depleted Two-Dimensional Electron Systems

    NASA Astrophysics Data System (ADS)

    Bachsoliani, N.; Platonov, S.; Wieck, A. D.; Ludwig, S.

    2017-12-01

    Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs /(Al ,Ga )As heterostructure enable a large variety of applications ranging from fundamental research to high-speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by the selective depletion of a preexisting 2DES. We explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates, and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric-field effect, as it allows us to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. We present a first exploration of this method pursuing field effect, Hall effect, and Aharonov-Bohm measurements to study electrostatic, dynamic, and coherent properties.

  15. The influence of an MgO nanolayer on the planar Hall effect in NiFe films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Minghua, E-mail: mhli@ustb.edu.cn; Department of Electrical Engineering, University of California, Los Angeles, California 90095; Zhao, Zhiduo

    2015-03-28

    The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFemore » (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.« less

  16. Systems and methods for cylindrical hall thrusters with independently controllable ionization and acceleration stages

    DOEpatents

    Diamant, Kevin David; Raitses, Yevgeny; Fisch, Nathaniel Joseph

    2014-05-13

    Systems and methods may be provided for cylindrical Hall thrusters with independently controllable ionization and acceleration stages. The systems and methods may include a cylindrical channel having a center axial direction, a gas inlet for directing ionizable gas to an ionization section of the cylindrical channel, an ionization device that ionizes at least a portion of the ionizable gas within the ionization section to generate ionized gas, and an acceleration device distinct from the ionization device. The acceleration device may provide an axial electric field for an acceleration section of the cylindrical channel to accelerate the ionized gas through the acceleration section, where the axial electric field has an axial direction in relation to the center axial direction. The ionization section and the acceleration section of the cylindrical channel may be substantially non-overlapping.

  17. A Gift for Reading Hall No. 1

    ERIC Educational Resources Information Center

    MacWilliams, Bryon

    2009-01-01

    In this article, the author describes Reading Hall No. 1 of the Russian State Library. He was placed in the first reading hall in the mid-1990s, when the Russian government still honored Soviet traditions of granting certain privileges to certain foreigners. In the first hall, the rules are different. He can request as many books as he wants. He…

  18. Hollow Cathode Assembly Development for the HERMeS Hall Thruster

    NASA Technical Reports Server (NTRS)

    Sarver-Verhey, Timothy R.; Kamhawi, Hani; Goebel, Dan M.; Polk, James E.; Peterson, Peter Y.; Robinson, Dale A.

    2016-01-01

    To support the operation of the HERMeS 12.5 kW Hall Thruster for NASA's Asteroid Redirect Robotic Mission, hollow cathodes using emitters based on barium oxide impregnate and lanthanum hexaboride are being evaluated through wear-testing, performance characterization, plasma modeling, and review of integration requirements. This presentation will present the development approach used to assess the cathode emitter options. A 2,000-hour wear-test of development model Barium Oxide (BaO) hollow cathode is being performed as part of the development plan. Specifically this test is to identify potential impacts cathode emitter life during operation in the HERMeS thruster. The cathode was operated with a magnetic field-equipped anode that simulates the HERMeS hall thruster operating environment. Cathode discharge performance has been stable with the device accumulating 743 hours at the time of this report. Observed voltage changes are attributed to keeper surface condition changes during testing. Cathode behavior during characterization sweeps exhibited stable behavior, including cathode temperature. The details of the cathode assembly operation of the wear-test will be presented.

  19. Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer

    NASA Astrophysics Data System (ADS)

    Sanchez-Yamagishi, Javier D.; Luo, Jason Y.; Young, Andrea F.; Hunt, Benjamin M.; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C.; Jarillo-Herrero, Pablo

    2017-02-01

    Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

  20. Structure of edge-state inner products in the fractional quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Fern, R.; Bondesan, R.; Simon, S. H.

    2018-04-01

    We analyze the inner products of edge state wave functions in the fractional quantum Hall effect, specifically for the Laughlin and Moore-Read states. We use an effective description for these inner products given by a large-N expansion ansatz proposed in a recent work by J. Dubail, N. Read, and E. Rezayi [Phys. Rev. B 86, 245310 (2012), 10.1103/PhysRevB.86.245310]. As noted by these authors, the terms in this ansatz can be constrained using symmetry, a procedure we perform to high orders. We then check this conjecture by calculating the overlaps exactly for small system sizes and compare the numerics with our high-order expansion. We find the effective description to be very accurate.

  1. Overview of Hall D Complex

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chudakov, Eugene A.

    Hall D is a new experimental hall at Jefferson Lab, designed for experiments with a photon beam. The primary motivation for Hall D is the GlueX experiment [1,2], dedicated to meson spectroscopy. The Hall D complex consists of: An electron beam line used to extract the 5.5-pass electrons from the accelerator into the Tagger Hall. The designed beam energy is E e = 12 GeV;The Tagger Hall, where the electron beam passes through a thin radiator (~0.01% R.L.) and is deflected into the beam dump. The electrons that lost >30% of their energy in the radiator are detected with scintillatormore » hodoscopes providing a ~0.1% energy resolution for the tagged photons. Aligned diamond radiators allow to produce linearly polarized photons via the Coherent Bremsstrahlung. The beam dump is limited to 60 kW (5 µA at 12 GeV); The Collimator Cave contains a collimator for the photon beam and dipole magnets downstream in order to remove charged particles. The 3.4 mm diameter collimator, located about 75 m downstream of the radiator, selects the central cone of the photon beam increasing its average linear polarization, up to ~40%in the coherent peak at 9 GeV; Hall D contains several elements of the photon beam line, and themain spectrometer. A Pair Spectrometer consists of a thin converter, a dipole magnet, and a two-arm detector used to measure the energy spectrum of the photon beam. The main spectrometer is based on a 2-T superconducting solenoid, 4 m long and 1.85 m bore diameter. The liquid hydrogen target is located in the front part the solenoid. The charged tracks are detected with a set of drift chambers; photons are detected with two electromagnetic calorimeters. There are also scintillator hodoscopes for triggering and time-of-flight measurements. The spectrometer is nearly hermetic in an angular range of 1° < θ < 120 •. The momentum resolution is σ p /p ~ 1 ₋ ₋3% depending on the polar angle θ. The energy resolution of the electromagnetic calorimeters is about 7

  2. Astronaut Hall of Fame

    NASA Image and Video Library

    2018-04-21

    Former astronauts and space explorers, Thomas D. Jones, Ph.D., and Scott D. Altman, front row, center, left and right, respectively, were inducted into the U.S. Astronaut Hall of Fame Class of 2018 during a ceremony inside the Space Shuttle Atlantis attraction at NASA’s Kennedy Space Center Visitor Complex in Florida. They are standing with previous Hall of Famers, including, Curt Brown, back row, far left, chairman of the board, Astronaut Scholarship Foundation. Brown performed the induction ceremony. Also in the group is former astronaut and NASA administrator Charlie Bolden, in the center, behind Jones and Altman. In the back row, second from left is John Grunsfeld, who spoke on behalf of Altman during the ceremony. Directly behind Altman is Storey Musgrave, who spoke on behalf of Jones during the ceremony. Inductees into the Hall of Fame are selected by a committee of Hall of Fame astronauts, former NASA officials, flight directors, historians and journalists. The process is administered by the Astronaut Scholarship Foundation. To be eligible, an astronaut must have made his or her first flight at least 17 years before the induction. Candidates must be a U.S. citizen and a NASA-trained commander, pilot or mission specialist who has orbited the earth at least once. Including Altman and Jones, 97 astronauts have been inducted into the AHOF.

  3. Metal-to-insulator switching in quantum anomalous Hall states

    DOE PAGES

    Kou, Xufeng; Pan, Lei; Wang, Jing; ...

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12Bi 0.26Sb 0.62) 2Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phasemore » diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

  4. Dr. Hall and the work cure.

    PubMed

    Reed, Kathlyn L

    2005-01-01

    Herbert James Hall, MD (1870-1923), was a pioneer in the systematic and organized study of occupation as therapy for persons with nervous and mental disorders that he called the "work cure." He began his work in 1904 during the early years of the Arts and Crafts Movement in the United States. His primary interest was the disorder neurasthenia, a condition with many symptoms including chronic fatigue, stress, and inability to work or perform everyday tasks. The prevailing treatment of the day was absolute bed rest known as the "rest cure." Hall believed that neurasthenia was not caused by overwork but by faulty living habits that could be corrected through an ordered life schedule and selected occupations. He identified several principles of therapy that are still used today including graded activity and energy conservation. Dr. Adolph Meyer credits Hall for organizing the ideas on the therapeutic use of occupation (Meyer, 1922). Hall also provided the name American Occupational Therapy Association for the professional organization and served as the fourth president. For his many contributions to the profession Hall deserves to be recognized as a major contributor to the development and organization of occupational therapy.

  5. Hall effects on the Walén relation in rotational discontinuities and Alfvén waves

    NASA Astrophysics Data System (ADS)

    Wu, B. H.; Lee, L. C.

    2000-08-01

    For Alfvénic fluctuations in magnetohydrodynamics (MHD) the perturbed transverse velocity Vt and magnetic field Bt can be related by the Walén relation, Vt = ±Bt/(μ0ρ)1/2 ≡;±VAt, where ρ is the plasma density, VAt is the transverse Alfvén velocity, and the plus (minus) sign is for antiparallel (parallel) propagation. However, observations of Vt and Bt for Alfvén waves and rotational discontinuities in the solar wind and at the magnetopause showed an obvious deviation from the relation. In this paper, modifications of the Walén relation for linear and nonlinear Alfvén waves and rotational discontinuities (RDs) are examined in the Hall-MHD formulation. Let Vit (≈ Vt) be the transverse ion velocity and Vet be the transverse electron velocity. It is found that Vit = ±Bt(z)/(μ0ρ1)1/2 = ±(ρ(z)/ρ1)1/2 VAt(z) and Vet = ±(ρ1/μ0)1/2Bt(z)/ρ(z) = ±(ρ1/ρ(z))1/2 VAt(z)for RDs in Hall-MHD, where ρ1 is the upstream plasma density. The ion and electron Walén ratios are defined as Ai = Vit/VAt and Ae = Vet/VAt, respectively. It is found in Hall-MHD that ?, AiAe = 1 and Ai < 1 (Ai > 1) for Alfvén waves and RDs with right-hand (left-hand) polarization. The Hall dispersive effect may modify the ion Walén ratio by ΔAi≈±0.14 for the magnetopause RDs and by ΔAi≈±0.07 for the interplanetary RDs.

  6. Multi-region relaxed Hall magnetohydrodynamics with flow

    DOE PAGES

    Lingam, Manasvi; Abdelhamid, Hamdi M.; Hudson, Stuart R.

    2016-08-03

    The recent formulations of multi-region relaxed magnetohydrodynamics (MRxMHD) have generalized the famous Woltjer-Taylor states by incorporating a collection of “ideal barriers” that prevent global relaxation and flow. In this paper, we generalize MRxMHD with flow to include Hall effects, and thereby obtain the partially relaxed counterparts of the famous double Beltrami states as a special subset. The physical and mathematical consequences arising from the introduction of the Hall term are also presented. We demonstrate that our results (in the ideal MHD limit) constitute an important subset of ideal MHD equilibria, and we compare our approach against other variational principles proposedmore » for deriving the partially relaxed states.« less

  7. Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

    DOE PAGES

    Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; ...

    2018-04-09

    Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

  8. Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

    Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

  9. 2017 Astronaut Hall of Fame Induction Ceremony

    NASA Image and Video Library

    2017-05-19

    In the Space Shuttle Atlantis facility at the Kennedy Space Center Visitor Complex in Florida, Astronaut Scholarship Foundation Chairman Dan Brandenstein, left, also a Hall of Fame astronaut, presents inductee Michael Foale with his hall of fame medal. Former NASA Administrator Charlie Bolden, right, a Hall of Fame member, presented Foale for induction. During this year's ceremonies, space shuttle astronaut Ellen Ochoa also was enshrined.

  10. 2017 Astronaut Hall of Fame Induction Ceremony

    NASA Image and Video Library

    2017-05-19

    In the Space Shuttle Atlantis facility at the Kennedy Space Center Visitor Complex in Florida, Astronaut Scholarship Foundation Chairman Dan Brandenstein, left, also a Hall of Fame astronaut, presents inductee Ellen Ochoa with her hall of fame medal. Former Johnson Space Center Director Mike Coats, right, a Hall of Fame member, presented Ochoa for induction. During this year's ceremonies, space shuttle astronaut Michael Foale also was enshrined.

  11. Thermopower and the Fractional Quantized Hall Effect in the N=1 Landau Level

    NASA Astrophysics Data System (ADS)

    Chickering, W. E.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.

    2012-02-01

    Having recently eliminated an issue involving long thermal time constants [1], we are now able to resolve diffusion thermopower deep into the fractional quantized Hall effect (FQHE) regime. In this talk we report measurements of thermopower in the first excited (N=1) Landau level as a continuous function of magnetic field down to temperatures as low as 30mK. Above 50mK we can clearly resolve the ν = 5/2 as well as ν = 7/3, 8/3, and 14/5 FQHEs in both the electrical and thermoelectrical transport. Below 50mK a prominent feature of the electrical transport in the first excited Landau level is the Re-entrant Integer Quantized Hall Effect (RIQHE) which is associated with insulating collective phases [2]. In this temperature regime the thermopower exhibits a series of intriguing sign reversals that are as yet not fully understood. We will conclude with a brief discussion of the connection between thermopower and the entropy of the 2D electron system. This connection is invoked by a recent prediction [3] of the thermopower at ν = 5/2, which assumes the ground state is the non-Abelian Moore-Read paired composite fermion state.[4pt] [1] Chickering, Phys. Rev. B 81, 245319 (2010)[0pt] [2] Eisenstein, Phys. Rev. Lett. 88, 076801 (2002)[0pt] [3] Yang, Phys. Rev. B 79, 115317 (2009)

  12. Extreme Soft Limit Observation of Quantum Hall Effect in a 3-d Semiconductor

    NASA Astrophysics Data System (ADS)

    Bleiweiss, Michael; Yin, Ming; Amirzadeh, Jafar; Preston, Harry; Datta, Timir

    2004-03-01

    We report on the evidence for quantum hall effect at 38K and in magnetic fields (B) as low as 1k-Orsted. Our specimens were semiconducting, carbon replica opal (CRO) structures. CRO are three dimensional bulk systems where the carbon is grown by CVD into the porous regions in artificial silica opals. The carbon forms layers on top of the silica spheres as eggshells. The shells are of uneven thickness and are perforated at the contacts points of the opal spheres and form a closed packed, three dimensional crystal structure. Plateaus in inverse R_xy that are conjugated with well-defined Subnikov-deHass modulations in R_xx were observed. The quantum steps that are particularly prominent were the states with fill factors v = p/q (p,q are integers) were the well know fractions, 1/3, 1/2, 3/5, 1 and 5/2. QHE steps indicate that the carriers are localized in two-dimensional regions, which may be due to the extremely large surface to volume ratio associated with replica opal structure. From the B-1 vs v straight line, the effective surface carrier density, ns = 2.2 x 10^14 m-2. To the best of our knowledge, the current work is the first to report fractional quantum hall plateaus in a bulk system.

  13. Quantum Hall physics: Hierarchies and conformal field theory techniques

    NASA Astrophysics Data System (ADS)

    Hansson, T. H.; Hermanns, M.; Simon, S. H.; Viefers, S. F.

    2017-04-01

    The fractional quantum Hall effect, being one of the most studied phenomena in condensed matter physics during the past 30 years, has generated many ground-breaking new ideas and concepts. Very early on it was realized that the zoo of emerging states of matter would need to be understood in a systematic manner. The first attempts to do this, by Haldane and Halperin, set an agenda for further work which has continued to this day. Since that time the idea of hierarchies of quasiparticles condensing to form new states has been a pillar of our understanding of fractional quantum Hall physics. In the 30 years that have passed since then, a number of new directions of thought have advanced our understanding of fractional quantum Hall states and have extended it in new and unexpected ways. Among these directions is the extensive use of topological quantum field theories and conformal field theories, the application of the ideas of composite bosons and fermions, and the study of non-Abelian quantum Hall liquids. This article aims to present a comprehensive overview of this field, including the most recent developments.

  14. Role of chiral quantum Hall edge states in nuclear spin polarization.

    PubMed

    Yang, Kaifeng; Nagase, Katsumi; Hirayama, Yoshiro; Mishima, Tetsuya D; Santos, Michael B; Liu, Hongwu

    2017-04-20

    Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

  15. Remote Diagnostic Measurements of Hall Thruster Plumes

    DTIC Science & Technology

    2009-08-14

    This paper describes measurements of Hall thruster plumes that characterize ion energy distributions and charge state fractions using remotely...charge state. Next, energy and charge state measurements are described from testing of a 200 W Hall thruster at AFIT. Measurements showed variation in...position. Finally, ExB probe charge state measurements are presented from a 6-kW laboratory Hall thruster operated at low discharge voltage levels at AFRL

  16. Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator

    DOE PAGES

    Kou, Liangzhi; Tan, Xin; Ma, Yandong; ...

    2015-11-23

    In this study, topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations reveal a band inversion among the Bi-p orbits driven by the strong intrinsic spin–orbit coupling, producing a largemore » nontrivial band gap, which can be effectively tuned by moderate strains. The helical gapless edge states exhibit a linear dispersion with a high Fermi velocity comparable to that of graphene, and the QSH phase remains robust on a NaCl substrate. These remarkable properties place TB-Bi among the most promising 2D TIs for high-speed spintronic devices, and the present results provide insights into the intriguing QSH phenomenon in this new Bi structure and offer guidance for its implementation in potential applications.« less

  17. Electron Transport in Hall Thrusters

    NASA Astrophysics Data System (ADS)

    McDonald, Michael Sean

    altering the bias potential of thruster surfaces show minimal effects from electron collisions with thruster surfaces. Taken together these results motivate further investigation of the rotating spoke instability and development of an analytic description to permit its inclusion in next generation Hall thruster models.

  18. Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Pramey; Tserkovnyak, Yaroslav

    2016-07-01

    We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

  19. Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shi, Zhong; Jiang, Hang-Yu; Zhou, Shi-Ming, E-mail: shiming@tongji.edu.cn

    2016-01-15

    The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial Ni{sub x}Fe{sub 1−x} thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K{sub 1}. When nickel content x decreasing, both b and K{sub 1} vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate Ni{sub x}Fe{sub 1−x} has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K{sub 1}. This remarkable correlation betweenmore » b and K{sub 1} can be attributed to the effect of band filling near the Fermi surface.« less

  20. Detection of pure inverse spin-Hall effect induced by spin pumping at various excitation

    NASA Astrophysics Data System (ADS)

    Inoue, H. Y.; Harii, K.; Ando, K.; Sasage, K.; Saitoh, E.

    2007-10-01

    Electric-field generation due to the inverse spin-Hall effect (ISHE) driven by spin pumping was detected and separated experimentally from the extrinsic magnetogalvanic effects in a Ni81Fe19/Pt film. By applying a sample-cavity configuration in which the extrinsic effects are suppressed, the spin pumping using ferromagnetic resonance gives rise to a symmetric spectral shape in the electromotive force spectrum, indicating that the motive force is due entirely to ISHE. This method allows the quantitative analysis of the ISHE and the spin-pumping effect. The microwave-power dependence of the ISHE amplitude is consistent with the prediction of a direct current-spin-pumping scenario.