Effectiveness of Combination of Dentin and Enamel Layers on the Masking Ability of Porcelain.

PubMed

Boscato, Noéli; Hauschild, Fernando Gabriel; Kaizer, Marina da Rosa; De Moraes, Rafael Ratto

2015-01-01

This study evaluated the masking ability of different porcelain thicknesses and combination of enamel and/or dentin porcelain layers over simulated background dental substrates with higher (A2) and lower (C4) color values. Combination of the enamel (E) and dentin (D) monolayer porcelain disks with different thicknesses (0.5 mm, 0.8 mm, and 1 mm) resulted in the following bilayer groups (n=10): D1E1, D1E0.8; D1E0.5; D0.8E0.8; D0.8E0.5, and D0.5E0.5. CIELAB color coordinates were measured with a spectrophotometer. The translucency parameter of mono and bilayer specimens and the masking ability estimated by color variation (ΔE*ab) of bilayer specimens over simulated dental substrates were evaluated. Linear regression analysis was used to investigate the relationships translucency parameter × ΔE*, translucency parameter × porcelain thickness, and ΔE* × porcelain thickness. Data were analyzed statistically (α= 0.05). Thinner porcelain disks were associated with higher translucency. Porcelain monolayers were considerably more translucent than bilayers (enamel + dentin). Dentin porcelain was less translucent than enamel porcelain with same thickness. ΔE* was always lower when measured over A2 background. Higher ΔE* was observed for the C4 background, indicating poorer masking ability. Increased ΔE* was significantly associated with increased translucency for both backgrounds. Decreased translucency and ΔE* were associated with increased total porcelain thickness or increased dentin thickness for both backgrounds. In conclusion, increased porcelain thickness (particularly increased dentin layer) and increased porcelain opacity resulted in better masking ability of the dental backgrounds.

Experimental Investigation of White Layer formation in Hard Turning

NASA Astrophysics Data System (ADS)

Umbrello, D.; Rotella, G.; Crea, F.

2011-05-01

Hard turning with super hard cutting tools, like PCBN or Ceramics inserts, represents an interesting advance in the manufacturing industry, regarding the finishing of hardened steels. This innovative machining technique is considered an attractive alternative to traditional finish grinding operations because of the high flexibility, the ability to achieve higher metal removal rates, the possibility to operate without the use of coolants, and the capability to achieve comparable workpiece quality. However, the surface integrity effects of hard machining need to be taken into account due to their influence on the life of machined components. In particular, the formation of a usually undesirable white layer at the surface needs further investigation. Three different mechanisms have been proposed as main responsible of the white layer genesis: (i) microstructural phase transformation due to a rapid heating and quenching, (ii) severe plastic deformation resulting in a homogenous structure and/or a very fine grain size microstructure; (iii) surface reaction with the environment. In this research, an experimental campaign was carried out and several experimental techniques were used in order to analyzed the machined surface and to understand which of the above mentioned theories is the main cause of the white layer formation when AISI 52100 hardened steel is machined by PCBN inserts. In particular, the topography characterization has obtained by means of optical and scanning electron microscope (SEM) while microstructural phase composition and chemical characterization have been respectively detected using X-ray Diffraction (XRD) and Energy-dispersive X-ray spectroscopy (EDS) techniques. The results prove that the white layer is the result of microstructural alteration, i.e. the generation of a martensitic structure.

Overlay improvement by exposure map based mask registration optimization

NASA Astrophysics Data System (ADS)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density

A procedure and program to calculate shuttle mask advantage

NASA Astrophysics Data System (ADS)

Balasinski, A.; Cetin, J.; Kahng, A.; Xu, X.

2006-10-01

A well-known recipe for reducing mask cost component in product development is to place non-redundant elements of layout databases related to multiple products on one reticle plate [1,2]. Such reticles are known as multi-product, multi-layer, or, in general, multi-IP masks. The composition of the mask set should minimize not only the layout placement cost, but also the cost of the manufacturing process, design flow setup, and product design and introduction to market. An important factor is the quality check which should be expeditious and enable thorough visual verification to avoid costly modifications once the data is transferred to the mask shop. In this work, in order to enable the layer placement and quality check procedure, we proposed an algorithm where mask layers are first lined up according to the price and field tone [3]. Then, depending on the product die size, expected fab throughput, and scribeline requirements, the subsequent product layers are placed on the masks with different grades. The actual reduction of this concept to practice allowed us to understand the tradeoffs between the automation of layer placement and setup related constraints. For example, the limited options of the numbers of layer per plate dictated by the die size and other design feedback, made us consider layer pairing based not only on the final price of the mask set, but also on the cost of mask design and fab-friendliness. We showed that it may be advantageous to introduce manual layer pairing to ensure that, e.g., all interconnect layers would be placed on the same plate, allowing for easy and simultaneous design fixes. Another enhancement was to allow some flexibility in mixing and matching of the layers such that non-critical ones requiring low mask grade would be placed in a less restrictive way, to reduce the count of orphan layers. In summary, we created a program to automatically propose and visualize shuttle mask architecture for design verification, with

Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Ohnishi, Takayuki; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi; Bai, Shufeng; Wang, Jen-Shiang; Howell, Rafael; Chen, George; Li, Jiangwei; Tao, Jun; Wiley, Jim; Kurosawa, Terunobu; Saito, Yasuko; Takigawa, Tadahiro

2010-09-01

In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayn, I.; Mouradian, S.; Li, L.

2014-11-24

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

EUVL Mask Blank Repair

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barty, A; Mirkarimi, P; Stearns, D G

2002-05-22

EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect they present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variationsmore » in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper they present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.« less

Polyurethane Masks Large Areas in Electroplating

NASA Technical Reports Server (NTRS)

Beasley, J. L.

1985-01-01

Polyurethane foam provides effective mask in electroplating of copper or nickel. Thin layer of Turco maskant painted on area to be masked: Layer ensures polyurethane foam removed easily after served its purpose. Component A, isocyanate, and component B, polyol, mixed together and brushed or sprayed on mask area. Mixture reacts, yielding polyurethane foam. Foam prevents deposition of nickel or copper on covered area. New method saves time, increases productivity and uses less material than older procedures.

Lithography-based automation in the design of program defect masks

NASA Astrophysics Data System (ADS)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Preparation of orally disintegrating tablets with taste-masking function: masking effect in granules prepared with correctives using the dry granulation method and evaluation of tablets prepared using the taste-masked granules.

PubMed

Kawano, Yayoi; Ito, Akihiko; Sasatsu, Masanaho; Machida, Yoshiharu

2010-01-01

We investigated several methods of taste masking in the preparation of orally disintegrating tablets (ODTs), using furosemide (FU) as a model drug. Four types of FU preparations were prepared: granules with maltitol (MA), granules with yogurt powder (YO), a physical mixture of FU and MA, and a physical mixture of FU and YO. All taste-masking granules were prepared using the dry granulation method. The taste of each type of preparation was evaluated. All four preparations markedly improved the taste of the FU tablets, but the mixing ratios of the correctives did not affect the masking effect. No difference in masking effect was found between MA and YO in the physical mixtures, but the masking effect in the granules with YO was superior to that of the granules with MA. Taste-masked FU tablets were prepared using the direct compression method; crystalline cellulose (Avicel PH-302) and mannitol were added as excipients at the mixing ratio of 1/1. All four types of tablets displayed sufficient hardness, but MA-containing tablets were harder than YO-containing tablets. The hardness of the tablets prepared from YO granules increased as the YO content increased. The most rapidly disintegrating tablets were those of YO granules prepared at a mixing ratio of FU/YO=1/1, which disintegrated within 20 s, followed by the tablets of MA granules prepared at a mixing ratio of FU/MA=1/1. The disintegration times of the tablets made from physical mixtures, in contrast, were longer than 200 s. Disintegration time lengthened as the mixing ratio of YO or MA increased. The hardness and disintegration time of these tablets could be controlled by varying the compression pressure. We found that YO is more useful than MA in masking unpleasant tastes and confirmed that orally disintegrating tablets with taste-masking function can be prepared using granules of YO prepared using the dry granulation method as a new corrective.

Ultrafast laser direct hard-mask writing for high efficiency c-Si texture designs

NASA Astrophysics Data System (ADS)

Kumar, Kitty; Lee, Kenneth K. C.; Nogami, Jun; Herman, Peter R.; Kherani, Nazir P.

2013-03-01

This study reports a high-resolution hard-mask laser writing technique to facilitate the selective etching of crystalline silicon (c-Si) into an inverted-pyramidal texture with feature size and periodicity on the order of the wavelength which, thus, provides for both anti-reflection and effective light-trapping of infrared and visible light. The process also enables engineered positional placement of the inverted-pyramid thereby providing another parameter for optimal design of an optically efficient pattern. The proposed technique, a non-cleanroom process, is scalable for large area micro-fabrication of high-efficiency thin c-Si photovoltaics. Optical wave simulations suggest the fabricated textured surface with 1.3 μm inverted-pyramids and a single anti-reflective coating increases the relative energy conversion efficiency by 11% compared to the PERL-cell texture with 9 μm inverted pyramids on a 400 μm thick wafer. This efficiency gain is anticipated to improve further for thinner wafers due to enhanced diffractive light trapping effects.

Preparation of multi-layer film consisting of hydrogen-free DLC and nitrogen-containing DLC for conductive hard coating

NASA Astrophysics Data System (ADS)

Iijima, Yushi; Harigai, Toru; Isono, Ryo; Degai, Satoshi; Tanimoto, Tsuyoshi; Suda, Yoshiyuki; Takikawa, Hirofumi; Yasui, Haruyuki; Kaneko, Satoru; Kunitsugu, Shinsuke; Kamiya, Masao; Taki, Makoto

2018-01-01

Conductive hard-coating films have potential application as protective films for contact pins used in the electrical inspection process for integrated circuit chips. In this study, multi-layer diamond-like carbon (DLC) films were prepared as conductive hard-coating films. The multi-layer DLC films consisting of DLC and nitrogen-containing DLC (N-DLC) film were prepared using a T-shape filtered arc deposition method. Periodic DLC/N-DLC four-layer and eight-layer films had the same film thickness by changing the thickness of each layer. In the ball-on-disk test, the N-DLC mono-layer film showed the highest wear resistance; however, in the spherical polishing method, the eight-layer film showed the highest polishing resistance. The wear and polishing resistance and the aggressiveness against an opponent material of the multi-layer DLC films improved by reducing the thickness of a layer. In multi-layer films, the soft N-DLC layer between hard DLC layers is believed to function as a cushion. Thus, the tribological properties of the DLC films were improved by a multi-layered structure. The electrical resistivity of multi-layer DLC films was approximately half that of the DLC mono-layer film. Therefore, the periodic DLC/N-DLC eight-layer film is a good conductive hard-coating film.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

Performance of an Achromatic Focal Plane Mask for Exoplanet Imaging Coronagraphy

NASA Technical Reports Server (NTRS)

Newman, Kevin; Belikov, Ruslan; Pluzhnik, Eugene; Balasubramanian, Kunjithapatham; Wilson, Dan

2014-01-01

Coronagraph technology combined with wavefront control is close to achieving the contrast and inner working angle requirements in the lab necessary to observe the faint signal of an Earth-like exoplanet in monochromatic light. An important remaining technological challenge is to achieve high contrast in broadband light. Coronagraph bandwidth is largely limited by chromaticity of the focal plane mask, which is responsible for blocking the stellar PSF. The size of a stellar PSF scales linearly with wavelength; ideally, the size of the focal plane mask would also scale with wavelength. A conventional hard-edge focal plane mask has a fixed size, normally sized for the longest wavelength in the observational band to avoid starlight leakage. The conventional mask is oversized for shorter wavelengths and blocks useful discovery space. Recently we presented a solution to the size chromaticity challenge with a focal plane mask designed to scale its effective size with wavelength. In this paper, we analyze performance of the achromatic size-scaling focal plane mask within a Phase Induced Amplitude Apodization (PIAA) coronagraph. We present results from wavefront control around the achromatic focal plane mask, and demonstrate the size-scaling effect of the mask with wavelength. The edge of the dark zone, and therefore the inner working angle of the coronagraph, scale with wavelength. The achromatic mask enables operation in a wider band of wavelengths compared with a conventional hard-edge occulter.

Filter penetration and breathing resistance evaluation of respirators and dust masks.

PubMed

Ramirez, Joel; O'Shaughnessy, Patrick

2017-02-01

The primary objective of this study was to compare the filter performance of a representative selection of uncertified dust masks relative to the filter performance of a set of NIOSH-approved N95 filtering face-piece respirators (FFRs). Five different models of commercially available dust masks were selected for this study. Filter penetration of new dust masks was evaluated against a sodium chloride aerosol. Breathing resistance (BR) of new dust masks and FFRs was then measured for 120 min while challenging the dust masks and FFRs with Arizona road dust (ARD) at 25°C and 30% relative humidity. Results demonstrated that a wide range of maximum filter penetration was observed among the dust masks tested in this study (3-75% at the most penetrating particle size (p < 0.001). The breathing resistances of the unused FFRs and dust masks did not vary greatly (8-13 mm H 2 O) but were significantly different (p < 0.001). After dust loading there was a significant difference between the BR caused by the ARD dust layer on each FFR and dust mask. Microscopic analysis of the external layer of each dust mask and FFR suggests that different collection media in the external layer influences the development of the dust layer and therefore affects the increase in BR differently between the tested models. Two of the dust masks had penetration values < 5% and quality factors (0.26 and 0.33) comparable to those obtained for the two FFRs (0.23 and 0.31). However, the remaining three dust masks, those with penetration > 15%, had quality factors ranging between 0.04-0.15 primarily because their initial BR remained relatively high. These results indicate that some dust masks analysed during this research did not have an expected very low BR to compensate for their high penetration.

A Method for Measuring the Hardness of the Surface Layer on Hot Forging Dies Using a Nanoindenter

NASA Astrophysics Data System (ADS)

Mencin, P.; van Tyne, C. J.; Levy, B. S.

2009-11-01

The properties and characteristics of the surface layer of forging dies are critical for understanding and controlling wear. However, the surface layer is very thin, and appropriate property measurements are difficult to obtain. The objective of the present study is to determine if nanoindenter testing provides a reliable method, which could be used to measure the surface hardness in forging die steels. To test the reliability of nanoindenter testing, nanoindenter values for two quenched and tempered steels (FX and H13) are compared to microhardness and macrohardness values. These steels were heat treated for various times to produce specimens with different values of hardness. The heat-treated specimens were tested using three different instruments—a Rockwell hardness tester for macrohardness, a Vickers hardness tester for microhardness, and a nanoindenter tester for fine scale evaluation of hardness. The results of this study indicate that nanoindenter values obtained using a Nanoindenter XP Machine with a Berkovich indenter reliably correlate with Rockwell C macrohardness values, and with Vickers HV microhardness values. Consequently, nanoindenter testing can provide reliable results for analyzing the surface layer of hot forging dies.

Mask fabrication process

DOEpatents

Cardinale, Gregory F.

2000-01-01

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Defect tolerant transmission lithography mask

DOEpatents

Vernon, Stephen P.

2000-01-01

A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

Hardness and surface roughness of enamel and base layers of resin denture teeth after long-term repeated chemical disinfection.

PubMed

Neppelenbroek, Karin Hermana; Kurokawa, Luciana Ayumi; Procópio, Andréa Lemos Falcão; Pegoraro, Thiago Amadei; Hotta, Juliana; Mello Lima, Jozely Francisca; Urban, Vanessa Migliorini

2015-01-01

To evaluate the effect of successive cycles of disinfection in different denture cleansers on the surface roughness and the Vickers hardness of two layers of acrylic resin (base-BL and enamel-EL) of two commercial cross-linked artificial teeth. The occlusal surfaces of 60 acrylic resin denture posterior teeth (Trilux-TLX and SR Orthosit PE-SRO) embedded in autopolymerizing acrylic resin were ground fat with 1200-grit silicon carbide paper. Specimens were stored in distilled water at 37°C and then submitted to the microhardness (VHN) and roughness (μm) tests. Specimens were stored in distilled water at 37°C for 90 days and submitted to 720 disinfection cycles in sodium hypochlorite at 0.5%, 30% vinegar solution or distilled water (control). Afterward, micro-hardness and roughness tests were again performed. Data were analyzed using two-way ANOVA and Tukey's test (α=0.05). Hypochlorite immersion decreased the hardness of BL and EL of SRO teeth, with an average reduction of 10.11% (p<0.008). TLX teeth demonstrated a hardness reduction of 28.96% of both layers for all solutions including water (p<0.0000). The roughness of both teeth was not affected by denture cleansers (p>0.37). Hypochlorite promoted deleterious effects on the hardness of both layers of the artificial teeth tested. Immersion in vinegar and water also resulted in reduction of hardness of TLX teeth. The surface hardness of the different layers of cross-linked artificial teeth can be altered by daily disinfection in denture cleansers commonly indicated for removable dentures.

Large Coded Aperture Mask for Spaceflight Hard X-ray Images

NASA Technical Reports Server (NTRS)

Vigneau, Danielle N.; Robinson, David W.

2002-01-01

The 2.6 square meter coded aperture mask is a vital part of the Burst Alert Telescope on the Swift mission. A random, but known pattern of more than 50,000 lead tiles, each 5 mm square, was bonded to a large honeycomb panel which projects a shadow on the detector array during a gamma ray burst. A two-year development process was necessary to explore ideas, apply techniques, and finalize procedures to meet the strict requirements for the coded aperture mask. Challenges included finding a honeycomb substrate with minimal gamma ray attenuation, selecting an adhesive with adequate bond strength to hold the tiles in place but soft enough to allow the tiles to expand and contract without distorting the panel under large temperature gradients, and eliminating excess adhesive from all untiled areas. The largest challenge was to find an efficient way to bond the > 50,000 lead tiles to the panel with positional tolerances measured in microns. In order to generate the desired bondline, adhesive was applied and allowed to cure to each tile. The pre-cured tiles were located in a tool to maintain positional accuracy, wet adhesive was applied to the panel, and it was lowered to the tile surface with synchronized actuators. Using this procedure, the entire tile pattern was transferred to the large honeycomb panel in a single bond. The pressure for the bond was achieved by enclosing the entire system in a vacuum bag. Thermal vacuum and acoustic tests validated this approach. This paper discusses the methods, materials, and techniques used to fabricate this very large and unique coded aperture mask for the Swift mission.

Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Kim, Jinsu; Lowe, Jeff; Dattilo, Davide; Koh, Soowan; Choi, Jun Yeol; Dietze, Uwe; Shoki, Tsutomu; Kim, Byung Gook; Jeon, Chan-Uk

2015-10-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. SPM (Sulfuric acid peroxide mixture) which has been extensively used for acid cleaning of photomask and wafer has serious drawback for EUV mask cleaning. It shows severe film loss of tantalum-based absorber layers and limited removal efficiency of EUV-generated carbon contaminants on EUV mask surface. Here, we introduce such novel cleaning chemicals developed for EUV mask as almost film loss free for various layers of the mask and superior carbon removal performance. Combinatorial chemical screening methods allowed us to screen several hundred combinations of various chemistries and additives under several different process conditions of temperature and time, eventually leading to development of the best chemistry selections for EUV mask cleaning. Recently, there have been many activities for the development of EUV pellicle, driven by ASML and core EUV scanner customer companies. It is still important to obtain film-loss free cleaning chemicals because cleaning cycle of EUV mask should be much faster than that of optic mask mainly due to EUV pellicle lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality changes and film losses during 50 cleaning cycles using new chemicals as well as particle and carbon contaminant removal characteristics. We have observed that the performance of new chemicals developed is superior to current SPM or relevant cleaning chemicals for EUV mask cleaning and EUV mask lifetime elongation.

Applications of CPL mask technology for sub-65nm gate imaging

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Conley, Will; Wu, Wei; Peters, Richie; Parker, Colita; Cobb, Jonathan; Kasprowicz, Bryan S.; van den Broeke, Doug; Park, J. C.; Karur-Shanmugam, Ramkumar

2005-05-01

The requirements for critical dimension control on gate layer for high performance products are increasingly demanding. Phase shift techniques provide aerial image enhancement, which can translate into improved process window performance and greater critical dimension (CD) control if properly applied. Unfortunately, the application of hard shifter technology to production requires significant effort in layout and optical proximity correction (OPC) application. Chromeless Phase Lithography (CPL) has several advantages over complementary phase mask (c:PSM) such as use of a single mask, and lack of phase placement 'coloring' conflicts and phase imbalance issues. CPL does have implementation issues that must be resolved before it can be used in full-scale production. CPL mask designs can be approached by separating features into three zones based on several parameters, including size relative to the lithographic resolution of the stepper lens, wavelength, and illumination conditions defined. Features are placed into buckets for different treatment zones. Zone 1 features are constructed with 100% transmission phase shifted structures and Zone 3 features are chrome (binary) structures. Features that fall into Zone 2, which are too wide to be defined using the 100% transmission of pure CPL (i.e. have negative mask error factor, MEEF) are the most troublesome and can be approached in several ways. The authors have investigated the application of zebra structures of various sizes to product type layouts. Previous work to investigate CPL using test structures set the groundwork for the more difficult task of applying CPL rules to actual random logic design layouts, which include many zone transitions. Mask making limitations have been identified that play a role in the zebra sizing that can be applied to Zone 2 features. The elimination of Zone 2 regions was also investigated in an effort to simplify the application of CPL and improve manufacturability of reticle through

Dynamic mask for producing uniform or graded-thickness thin films

DOEpatents

Folta, James A [Livermore, CA

2006-06-13

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

Influence of water layer thickness on hard tissue ablation with pulsed CO2 laser

NASA Astrophysics Data System (ADS)

Zhang, Xianzeng; Zhan, Zhenlin; Liu, Haishan; Zhao, Haibin; Xie, Shusen; Ye, Qing

2012-03-01

The theory of hard tissue ablation reported for IR lasers is based on a process of thermomechanical interaction, which is explained by the absorption of the radiation in the water component of the tissue. The microexplosion of the water is the cause of tissue fragments being blasted from hard tissue. The aim of this study is to evaluate the influence of the interdependence of water layer thickness and incident radiant exposure on ablation performance. A total of 282 specimens of bovine shank bone were irradiated with a pulse CO2 laser. Irradiation was carried out in groups: without a water layer and with a static water layer of thickness ranging from 0.2 to 1.2 mm. Each group was subdivided into five subgroups for different radiant exposures ranging from 18 to 84 J/cm2, respectively. The incision geometry, surface morphology, and microstructure of the cut walls as well as thermal injury were examined as a function of the water layer thickness at different radiant exposures. Our results demonstrate that the additional water layer is actually a mediator of laser-tissue interaction. There exists a critical thickness of water layer for a given radiant exposure, at which the additional water layer plays multiple roles, not only acting as a cleaner to produce a clean cut but also as a coolant to prevent bone heating and reduce thermal injury, but also helping to improve the regularity of the cut shape, smooth the cut surface, and enhance ablation rate and efficiency. The results suggest that desired ablation results depend on optimal selection of both water layer thickness and radiant exposure.

Nanostructural Evolution of Hard Turning Layers in Carburized Steel

NASA Astrophysics Data System (ADS)

Bedekar, Vikram

The mechanisms of failure for components subjected to contact fatigue are sensitive to the structure and properties of the material surface. Although, the bulk material properties are determined by the steel making, forming and the heat treatment; the near surface material properties are altered during final material removal processes such as hard turning or grinding. Therefore, the ability to optimize, modulate and predict the near surface properties during final metal removal operations would be extremely useful in the enhancement of service life of a component. Hard machining is known to induce severely deformed layers causing dramatic microstructural transformations. These transformations occur via grain refinement or thermal phenomena depending upon cutting conditions. The aim of this work is to engineer the near surface nanoscale structure and properties during hard turning by altering strain, strain rate, temperature and incoming microstructure. The near surface material transformations due to hard turning were studied on carburized SAE 8620 bearing steel. Variations in parent material microstructures were introduced by altering the retained austenite content. The strain, strain rate and temperature achieved during final metal cutting were altered by varying insert geometry, insert wear and cutting speed. The subsurface evolution was quantified by a series of advanced characterization techniques such as transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD), X-ray stress evaluation and nanoindentation which were coupled with numerical modeling. Results showed that the grain size of the nanocrystalline near surface microstructure can be effectively controlled by altering the insert geometry, insert wear, cutting speed and the incoming microstructure. It was also evident that the near surface retained austenite decreased at lower cutting speed indicating transformation due to plastic deformation, while it increased at higher cutting

What's in a mask? Information masking with forward and backward visual masks.

PubMed

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

NASA Astrophysics Data System (ADS)

Chen, Yulu; Wood, Obert; Rankin, Jed; Gullikson, Eric; Meyer-Ilse, Julia; Sun, Lei; Qi, Zhengqing John; Goodwin, Francis; Kye, Jongwook

2017-03-01

Unlike optical masks which are transmissive optical elements, use of extreme ultraviolet (EUV) radiation requires a reflective mask structure - a multi-layer coating consisting of alternating layers of high-Z (wave impedance) and low-Z materials that provide enhanced reflectivity over a narrow wavelength band peaked at the Bragg wavelength.1 Absorber side wall angle, corner rounding,2 surface roughness,3 and defects4 affect mask performance, but even seemingly simple parameters like bulk reflectivity on mirror and absorber surfaces can have a profound influence on imaging. For instance, using inaccurate reflectivity values at small and large incident angles would diminish the benefits of source mask co-optimization (SMO) and result in larger than expected pattern shifts. The goal of our work is to calculate the variation in mask reflectivity due to various sources of inaccuracies using Monte Carlo simulations. Such calculation is necessary as small changes in the thickness and optical properties of the high-Z and low-Z materials can cause substantial variations in reflectivity. This is further complicated by undesirable intermixing between the two materials used to create the reflector.5 One of the key contributors to mask reflectivity fluctuation is identified to be the intermixing layer thickness. We also investigate the impacts on OPC when the wrong mask information is provided, and evaluate the deterioration of overlapping process window. For a hypothetical N7 via layer, the lack of accurate mask information costs 25% of the depth of focus at 5% exposure latitude. Our work would allow the determination of major contributors to mask reflectivity variation, drive experimental efforts of measuring such contributors, provide strategies to optimize mask reflectivity, and quantize the OPC errors due to imperfect mask modeling.

Electrochemical Micromachining with Fiber Laser Masking for 304 Stainless Steel

NASA Astrophysics Data System (ADS)

Li, Xiaohai; Wang, Shuming; Wang, Dong; Tong, Han

2017-10-01

In order to fabricate micro structure, the combined machining of electrochemical micro machining (EMM) and laser masking for 304 stainless steel was studied. A device of composite machining of EMM with laser masking was developed, and the experiments of EMM with laser masking were carried out. First, by marking pattern with fiber laser on the surface of 304 stainless steel, the special masking layer can be formed. Through X ray photoelectron spectroscopy (XPS), the corrosion resistance of laser masking layer was analyzed. It is proved by XPS that the iron oxide and chromium oxide on the surface of stainless steel generates due to air oxidation when laser scanning heats. Second, the localization and precision of EMM are improved, since the marking patterns forming on the surface of stainless steel by laser masking play a protective role in the process of subsequent EMM when the appropriate parameters of EMM are selected. At last, the shape and the roughness of the machined samples were measured by SEM and optical profilometer and analyzed. The results show that the rapid fabrication of micro structures on the 304 stainless steel surface can be achieved by EMM with fiber laser masking, which has a good prospect in the field of micro machining.

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

A mask manufacturer's perspective on maskless lithography

NASA Astrophysics Data System (ADS)

Buck, Peter; Biechler, Charles; Kalk, Franklin

2005-11-01

Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a

Retention of pediatric bag-mask ventilation efficacy skill by inexperienced medical student resuscitators using standard bag-mask ventilation masks, pocket masks, and blob masks.

PubMed

Kitagawa, Kory H; Nakamura, Nina M; Yamamoto, Loren

2006-03-01

To measure the ventilation efficacy with three single-sized mask types on infant and child manikin models. Medical students were recruited as study subjects inasmuch as they are inexperienced resuscitators. They were taught proper bag-mask ventilation (BMV) according to the American Heart Association guidelines on an infant and a child manikin. Subjects completed a BMV attempt successfully using the adult standard mask (to simulate the uncertainty of mask selection), pocket mask, and blob mask. Each attempt consisted of 5 ventilations assessed by chest rise of the manikin. Study subjects were asked which mask was easiest to use. Four to six weeks later, subjects repeated the procedure with no instructions (to simulate an emergency BMV encounter without immediate pre-encounter teaching). Forty-six volunteer subjects were studied. During the first attempt, subjects preferred the standard and blob masks over the pocket mask. For the second attempt, the blob mask was preferred over the standard mask, and few liked the pocket mask. Using the standard, blob, and pocket masks on the child manikin, 39, 42, and 20 subjects, respectively, were able to achieve adequate ventilation. Using the standard, blob, and pocket masks on the infant manikin, 45, 45, and 11 subjects, respectively, were able to achieve adequate ventilation. Both the standard and blob masks are more effective than the pocket mask at achieving adequate ventilation on infant and child manikins in this group of inexperienced medical student resuscitators, who most often preferred the blob mask.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Effect of facial material softness and applied force on face mask dead volume, face mask seal, and inhaled corticosteroid delivery through an idealized infant replica.

PubMed

Carrigy, Nicholas B; O'Reilly, Connor; Schmitt, James; Noga, Michelle; Finlay, Warren H

2014-08-01

During the aerosol delivery device design and optimization process, in vitro lung dose (LD) measurements are often performed using soft face models, which may provide a more clinically relevant representation of face mask dead volume (MDV) and face mask seal (FMS) than hard face models. However, a comparison of MDV, FMS, and LD for hard and soft face models is lacking. Metal, silicone, and polyurethane represented hard, soft, and very soft facial materials, respectively. MDV was measured using a water displacement technique. FMS was measured using a valved holding chamber (VHC) flow rate technique. The LD of beclomethasone dipropionate (BDP) delivered via a 100-μg Qvar® pressurized metered dose inhaler with AeroChamber Plus® Flow-Vu® VHC and Small Mask, defined as that which passes through the nasal airways of the idealized infant geometry, was measured using a bias tidal flow system with a filter. MDV, FMS, and LD were measured at 1.5 lb and 3.5 lb of applied force. A mathematical model was used to predict LD based on experimental measurements of MDV and FMS. Experimental BDP LD measurements for ABS, silicone, and polyurethane at 1.5 lb were 0.9 (0.6) μg, 2.4 (1.9) μg, and 19.3 (0.9) μg, respectively. At 3.5 lb, the respective LD was 10.0 (1.5) μg, 13.8 (1.4) μg, and 14.2 (0.9) μg. Parametric analysis with the mathematical model showed that differences in FMS between face models had a greater impact on LD than differences in MDV. The use of soft face models resulted in higher LD than hard face models, with a greater difference at 1.5 lb than at 3.5 lb. A lack of a FMS led to decreased dose consistency; therefore, a sealant should be used when measuring LD with a hard ABS or soft silicone face model at 1.5 lb of applied force or less.

V-Y two-layer repair for oronasal fistula of hard palate.

PubMed

Abdel-Aziz, Mosaad

2010-09-01

Oronasal fistula represents a functional problem after cleft palate repair; its closure is technically difficult with a high recurrence rate after primary treatment. The aim of this study was to evaluate the efficacy of closure of oronasal fistula using 2 layers of oral mucoperiosteum in a V-Y manner. Fourteen patients were subjected for repair of their oronasal fistulas using 2 layers; the first is the oral mucoperiosteum that is elevated and inverted to close the nasal side as a hinge flap, and the second is also the oral mucoperiosteum that is elevated and sutured in a V-Y manner to close the oral side. In all cases, the fistula was completely closed at first attempt, no cases developed operative or postoperative complications. Recurrence with not recorded in any case after a follow-up period of at least 12 months. Closure of oronasal fistula of the hard palate that may develop after cleft palate repair using a two-layer closure in V-Y manner is an easy and ideal method with a high success rate. Copyright 2010 Elsevier Ireland Ltd. All rights reserved.

Plasma-deposited fluoropolymer film mask for local porous silicon formation

PubMed Central

2012-01-01

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates. PMID:22734507

Application of advanced structure to multi-tone mask for FPD process

NASA Astrophysics Data System (ADS)

Song, Jin-Han; Jeong, Jin-Woong; Kim, Kyu-Sik; Jeong, Woo-Gun; Yun, Sang-Pil; Lee, Dong-Heok; Choi, Sang-Soo

2017-07-01

In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.

[Preparation and evaluation of taste masked orally disintegrating tablets with granules made by the wet granulation method].

PubMed

Kawano, Yayoi; Ito, Akihiko; Sasatsu, Masanaho; Machida, Yoshiharu; Onishi, Hiraku

2010-12-01

Using furosemide (FU) as a model drug, we examined the wet granulation method as a way to improve the taste masking and physical characteristics of orally disintegrating tablets (ODTs). In the wet granulation method, yogurt powder (YO) was used as a corrective and maltitol (MA) was used as a binding agent. The taste masked FU tablets were prepared using the direct compression method. Microcrystalline cellulose (Avicel® PH-302) and mannitol were added as excipients at a mixing ratio of 1/1 by weight. Based on the results of sensory test on taste, the prepared granules markedly improved the taste of FU, and a sufficient masking effect was obtained at the YO/FU ratio of 1 or more. Furthermore, it was found that the masking effect achieved by YO granules made with the wet granulation method was similar to or better than that produced by the granules made with dry granulation method. All types of tablets displayed sufficient hardness (over 3.5×10(-2) kN), and rapidly disintegrating tablets were obtained with YO granules produced at a mixing ratio of FU/YO=1/1, which disintegrated within 20 s. Disintegration time lengthened as the mixing ratio of YO to FU increased. In the mixing ratio of FU/YO=1/1, the hardness of tablets with granules made by the wet granulation method exceeded that of tablets with granules made by the dry granulation method, with minimal differences in disintegration time. The hardness and disintegration time of the tablets with granules made by the wet granulation method could be controlled by varying the compression force. In conclusion, YO was found to be a useful additive for masking unpleasant tastes. FU ODTs with improved taste, rapid disintegration and greater hardness could be prepared with YO-containing granules made by the wet granulation method using MA as a binding agent.

Development of binary image masks for TPF-C and ground-based AO coronagraphs

NASA Astrophysics Data System (ADS)

Ge, Jian; Crepp, Justin; Vanden Heuvel, Andrew; Miller, Shane; McDavitt, Dan; Kravchenko, Ivan; Kuchner, Marc

2006-06-01

simulations are provided in the last section. In particular, we find that: (i) apodized masks provide deeper contrast than hard-edge masks when the image quality exceeds 80% Strehl ratio (SR), (ii) above 90% SR, 4th-order band-limited masks provide higher off-axis throughput than Gaussian masks when generating comparable contrast levels, and (iii) below ~90% SR, hard-edge masks may be better suited for high contrast imaging, since they are less susceptible to tip/tilt alignment errors.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Thermal Management in Nanofiber-Based Face Mask.

PubMed

Yang, Ankun; Cai, Lili; Zhang, Rufan; Wang, Jiangyan; Hsu, Po-Chun; Wang, Hongxia; Zhou, Guangmin; Xu, Jinwei; Cui, Yi

2017-06-14

Face masks are widely used to filter airborne pollutants, especially when particulate matter (PM) pollution has become a serious concern to public health. Here, the concept of thermal management is introduced into face masks for the first time to enhance the thermal comfort of the user. A system of nanofiber on nanoporous polyethylene (fiber/nanoPE) is developed where the nanofibers with strong PM adhesion ensure high PM capture efficiency (99.6% for PM 2.5 ) with low pressure drop and the nanoPE substrate with high-infrared (IR) transparency (92.1%, weighted based on human body radiation) results in effective radiative cooling. We further demonstrate that by coating nanoPE with a layer of Ag, the fiber/Ag/nanoPE mask shows a high IR reflectance (87.0%) and can be used for warming purposes. These multifunctional face mask designs can be explored for both outdoor and indoor applications to protect people from PM pollutants and simultaneously achieve personal thermal comfort.

Identification of Bitterness-Masking Compounds from Cheese

PubMed Central

2012-01-01

Bitterness-masking compounds were identified in a natural white mold cheese. The oily fraction of the cheese was extracted and further fractionated by using silica gel column chromatography. The four fractions obtained were characterized by thin-layer chromatography and nuclear magnetic resonance spectroscopy. The fatty acid-containing fraction was found to have the highest bitterness-masking activity against quinine hydrochloride. Bitterness-masking activity was quantitated using a method based on subjective equivalents. At 0.5 mM, the fatty acid mixture, which had a composition similar to that of cheese, suppressed the bitterness of 0.008% quinine hydrochloride to be equivalent to that of 0.0049–0.0060% and 0.5 mM oleic acid to that of 0.0032–0.0038% solution. The binding potential between oleic acid and the bitter compounds was estimated by isothermal titration calorimetry. These results suggest that oleic acid masked bitterness by forming a complex with the bitter compounds. PMID:22502602

A large format membrane-based x-ray mask for microfluidic chip fabrication

NASA Astrophysics Data System (ADS)

Wang, Lin; Zhang, Min; Desta, Yohannes; Melzak, J.; Wu, C. H.; Peng, Zhengchun

2006-02-01

X-ray lithography is a very good option for the fabrication of micro-devices especially when high aspect ratio patterns are required. Membrane-based x-ray masks are commonly used for high-resolution x-ray lithography. A thin layer of silicon nitride (Si3N4) or silicon carbide (SiC) film (1-2 µm) is normally used as the membrane material for x-ray mask fabrication (Wells G M, Reilly M, Nachman R, Cerrina F, El-Khakani M A and Chaker M 1993 Mater. Res. Soc. Conf. Proc. 306 81-9 Shoki T, Nagasawa H, Kosuga H, Yamaguchi Y, Annaka N, Amemiya I and Nagarekawa O 1993 SPIE Proc. 1924 450-6). The freestanding membrane window of an x-ray mask, which defines the exposing area of the x-ray mask, can be obtained by etching a pre-defined area on a silicon wafer from the backside (Wang L, Desta Y, Fettig R K, Goettert J, Hein H, Jakobs P and Chulz J 2004 J. Micromech. Microeng. 14 722-6). Usually, the window size of an x-ray mask is around 20 × 20 mm because of the low tensile stress of the membrane (10-100 MPa), and the larger window dimension of an x-ray mask may cause the deformation of membranes and lower the mask quality. However, x-ray masks with larger windows are preferred for micro-device fabrication in order to increase the productivity. We analyzed the factors which influence the flatness of large format x-ray masks and fabricated x-ray masks with a window size of 55 × 55 mm and 46 × 65 mm on 1 µm thick membranes by increasing the tensile stress of the membranes (>300 MPa) and optimizing the stress of the absorber layer. The large format x-ray mask was successfully applied for the fabrication of microfluidic chips.

Mechanically and electrically robust metal-mask design for organic CMOS circuits

NASA Astrophysics Data System (ADS)

Shintani, Michihiro; Qin, Zhaoxing; Kuribara, Kazunori; Ogasahara, Yasuhiro; Hiromoto, Masayuki; Sato, Takashi

2018-04-01

The design of metal masks for fabricating organic CMOS circuits requires the consideration of not only the electrical property of the circuits, but also the mechanical strength of the masks. In this paper, we propose a new design flow for metal masks that realizes coanalysis of the mechanical and electrical properties and enables design exploration considering the trade-off between the two properties. As a case study, we apply a “stitching technique” to the mask design of a ring oscillator and explore the best design. With this technique, mask patterns are divided into separate parts using multiple mask layers to improve the mechanical strength at the cost of high resistance of the vias. By a numerical experiment, the design trade-off of the stitching technique is quantitatively analyzed, and it is demonstrated that the proposed flow is useful for the exploration of the designs of metal masks.

Object Substitution Masking: When Does Mask Preview Work?

ERIC Educational Resources Information Center

Lim, Stephen Wee Hun; Chua, Fook K.

2008-01-01

When a target is enclosed by a 4-dot mask that persists after the target disappears, target identification is worse than it is when the mask terminates with the target. This masking effect is attributed to object substitution masking (OSM). Previewing the mask, however, attenuates OSM. This study investigated specific conditions under which mask…

Biochar impact on improving root growth and water retention capacity in Norfolk hard setting subsoil layer

USDA-ARS?s Scientific Manuscript database

The Norfolk soil series is a well-drained soil used commonly for agricultural production in the Eastern Carolinas. Certain profile features such as a hard setting subsoil layer with high bulk density, low water holding capacity and meager soil fertility characteristics makes this soil less producti...

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Thermal Management in Nanofiber-Based Face Mask

DOE PAGES

Yang, Ankun; Cai, Lili; Zhang, Rufan; ...

2017-05-15

Face masks are widely used to filter airborne pollutants, especially when particulate matter (PM) pollution has become a serious concern to public health. Here in this paper, the concept of thermal management is introduced into face masks for the first time to enhance the thermal comfort of the user. A system of nanofiber on nanoporous polyethylene (fiber/nanoPE) is developed where the nanofibers with strong PM adhesion ensure high PM capture efficiency (99.6% for PM 2.5) with low pressure drop and the nanoPE substrate with high-infrared (IR) transparency (92.1%, weighted based on human body radiation) results in effective radiative cooling. Wemore » further demonstrate that by coating nanoPE with a layer of Ag, the fiber/Ag/nanoPE mask shows a high IR reflectance (87.0%) and can be used for warming purposes. These multifunctional face mask designs can be explored for both outdoor and indoor applications to protect people from PM pollutants and simultaneously achieve personal thermal comfort.« less

Thermal Management in Nanofiber-Based Face Mask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ankun; Cai, Lili; Zhang, Rufan

Face masks are widely used to filter airborne pollutants, especially when particulate matter (PM) pollution has become a serious concern to public health. Here in this paper, the concept of thermal management is introduced into face masks for the first time to enhance the thermal comfort of the user. A system of nanofiber on nanoporous polyethylene (fiber/nanoPE) is developed where the nanofibers with strong PM adhesion ensure high PM capture efficiency (99.6% for PM 2.5) with low pressure drop and the nanoPE substrate with high-infrared (IR) transparency (92.1%, weighted based on human body radiation) results in effective radiative cooling. Wemore » further demonstrate that by coating nanoPE with a layer of Ag, the fiber/Ag/nanoPE mask shows a high IR reflectance (87.0%) and can be used for warming purposes. These multifunctional face mask designs can be explored for both outdoor and indoor applications to protect people from PM pollutants and simultaneously achieve personal thermal comfort.« less

The influence of hard-baking temperature applied for SU8 sensor layer on the sensitivity of capacitive chemical sensor

NASA Astrophysics Data System (ADS)

Klanjšek Gunde, Marta; Hauptman, Nina; Maček, Marijan; Kunaver, Matjaž

2009-06-01

SU8, the near-UV photosensitive epoxy-based polymer was used as a sensor layer in the capacitive chemical sensor, ready for integration with a generic double-metal CMOS technology. It was observed that the response of the sensor slowly increases with the temperature applied in hard-baking process as long as it remains below 300°C. At this temperature the response of the sensor abruptly increases and becomes almost threefold. It was shown that fully crosslinked structure of the sensor layer becomes opened and disordered when the sensor is hard-baked at temperatures between 300°C and 320°C, that is, still well below the degradation temperature of the polymer. These changes in chemical structure were analyzed by Fourier-transform infrared spectroscopy. The temperature-dependent changes of the sensor layer structure enable one to prepare a combination of capacitive chemical sensors with good discrimination between some volatile organic compounds.

An optimized OPC and MDP flow for reducing mask write time and mask cost

NASA Astrophysics Data System (ADS)

Yang, Ellyn; Li, Cheng He; Park, Se Jin; Zhu, Yu; Guo, Eric

2010-09-01

In the process of optical proximity correction, layout edge or fragment is migrating to proper position in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE can be also taken into account as a part of cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room for high mask error enhancement factor (MEEF), lack of process window, catastrophic pattern failure such as pinch/bridge and improper fragmentation. As technology node becomes finer, there happens conflict between OPC accuracy and stability. Especially for metal layers, OPC has focused on the stability by loss of accurate OPC results. On this purpose, several techniques have been introduced, which are target smoothing, process window aware OPC, model-based retargeting and adaptive OPC. By utilizing those techniques, OPC enables more stabilized patterning, instead of realizing design target exactly on wafer. Inevitably, post-OPC layouts become more complicated because those techniques invoke additional edge, or fragments prior to correction or during OPC iteration. As a result, jogs of post OPC layer can be dramatically increased, which results in huge number of shot count after data fracturing. In other words, there is trade-off relationship between data complexity and various methods for OPC stability. In this paper, those relationships have been investigated with respect to several technology nodes. The mask shot count reduction is achieved by reducing the number of jogs with which EPE difference are within pre-specified value. The effect of jog smoothing on OPC output - in view of OPC performance and mask data preparation - was studied quantitatively for respective technology nodes.

Development of a low-cost x-ray mask for high-aspect-ratio MEM smart structures

NASA Astrophysics Data System (ADS)

Ajmera, Pratul K.; Stadler, Stefan; Abdollahi, Neda

1998-07-01

A cost-effective process with short fabrication time for making x-ray masks for research and development purposes is described here for fabricating high-aspect ratio microelectromechanical structures using synchrotron based x- ray lithography. Microscope cover glass slides as membrane material is described. Slides with an initial thickness of 175 micrometers are etched to a thickness in the range of 10 - 25 micrometers using a diluted HF and buffered hydrofluoric acid solutions. The thinned slides are glued on supportive mask frames and sputtered with a chromium/silver sandwich layer which acts as a plating base layer for the deposition of the gold absorber. The judicial choice of glue and mask frame material are significant parameters in a successful fabrication process. Gold absorber structures are electroplated on the membrane. Calculations are done for contrast and dose ratio obtained in the photoresist after synchrotron radiation as a function of the mask design parameters. Exposure experiments are performed to prove the applicability of the fabricated x-ray mask.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Quantification of the specific yield in a two-layer hard-rock aquifer model

NASA Astrophysics Data System (ADS)

Durand, Véronique; Léonardi, Véronique; de Marsily, Ghislain; Lachassagne, Patrick

2017-08-01

Hard rock aquifers (HRA) have long been considered to be two-layer systems, with a mostly capacitive layer just below the surface, the saprolite layer, and a mainly transmissive layer underneath, the fractured layer. Although this hydrogeological conceptual model is widely accepted today within the scientific community, it is difficult to quantify the respective storage properties of each layer with an equivalent porous medium model. Based on an HRA field site, this paper attempts to quantify in a distinct manner the respective values of the specific yield (Sy) in the saprolite and the fractured layer, with the help of a deterministic hydrogeological model. The study site is the Plancoët migmatitic aquifer located in north-western Brittany, France, with piezometric data from 36 observation wells surveyed every two weeks for eight years. Whereas most of the piezometers (26) are located where the water table lies within the saprolite, thus representing the specific yield of the unconfined layer (Sy1), 10 of them are representative of the unconfined fractured layer (Sy2), due to their position where the saprolite is eroded or unsaturated. The two-layer model, based on field observations of the layer geometry, runs with the MODFLOW code. 81 values of the Sy1/Sy2 parameter sets were tested manually, as an inverse calibration was not able to calibrate these parameters. In order to calibrate the storage properties, a new quality-of-fit criterion called ;AdVar; was also developed, equal to the mean squared deviation of the seasonal piezometric amplitude variation. Contrary to the variance, AdVar is able to select the best values for the specific yield in each layer. It is demonstrated that the saprolite layer is about 2.5 times more capacitive than the fractured layer, with Sy1 = 10% (7% < Sy1 < 15%) against Sy2 = 2% (1% < Sy2 < 3%), in this particular example.

Vector scattering analysis of TPF coronagraph pupil masks

NASA Astrophysics Data System (ADS)

Ceperley, Daniel P.; Neureuther, Andrew R.; Lieber, Michael D.; Kasdin, N. Jeremy; Shih, Ta-Ming

2004-10-01

Rigorous finite-difference time-domain electromagnetic simulation is used to simulate the scattering from proto-typical pupil mask cross-section geometries and to quantify the differences from the normally assumed ideal on-off behavior. Shaped pupil plane masks are a promising technology for the TPF coronagraph mission. However the stringent requirements placed on the optics require that the detailed behavior of the edge-effects of these masks be examined carefully. End-to-end optical system simulation is essential and an important aspect is the polarization and cross-section dependent edge-effects which are the subject of this paper. Pupil plane masks are similar in many respects to photomasks used in the integrated circuit industry. Simulation capabilities such as the FDTD simulator, TEMPEST, developed for analyzing polarization and intensity imbalance effects in nonplanar phase-shifting photomasks, offer a leg-up in analyzing coronagraph masks. However, the accuracy in magnitude and phase required for modeling a chronograph system is extremely demanding and previously inconsequential errors may be of the same order of magnitude as the physical phenomena under study. In this paper, effects of thick masks, finite conductivity metals, and various cross-section geometries on the transmission of pupil-plane masks are illustrated. Undercutting the edge shape of Cr masks improves the effective opening width to within λ/5 of the actual opening but TE and TM polarizations require opposite compensations. The deviation from ideal is examined at the reference plane of the mask opening. Numerical errors in TEMPEST, such as numerical dispersion, perfectly matched layer reflections, and source haze are also discussed along with techniques for mitigating their impacts.

Influence of mask type and mask position on the effectiveness of bag-mask ventilation in a neonatal manikin.

PubMed

Deindl, Philipp; O'Reilly, Megan; Zoller, Katharina; Berger, Angelika; Pollak, Arnold; Schwindt, Jens; Schmölzer, Georg M

2014-01-01

Anatomical face mask with an air cushion rim might be placed accidentally in a false orientation on the newborn's face or filled with various amounts of air during neonatal resuscitation. Both false orientation as well as variable filling may reduce a tight seal and therefore hamper effective positive pressure ventilation (PPV). We aimed to measure the influence of mask type and mask position on the effectiveness of PPV. Twenty neonatal staff members delivered PPV to a modified, leak-free manikin. Resuscitation parameters were recorded using a self-inflatable bag PPV with an Intersurgical anatomical air cushion rim face mask (IS) and a size 0/1 Laerdal round face mask. Three different positions of the IS were tested: correct position, 90° and 180° rotation in reference to the midline of the face. IS masks in each correct position on the face but with different inflation of the air cushion (empty, 10, 20 and 30 mL). Mask leak was similar with mask rotation to either 90° or 180° but significantly increased from 27 (13-73) % with an adequate filled IS mask compared to 52 (16-83) % with an emptied air cushion rim. Anatomical-shaped face mask had similar mask leaks compared to round face mask. A wrongly positioned anatomical-shaped mask does not influence mask leak. Mask leak significantly increased once the air cushion rim was empty, which may cause failure in mask PPV.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current

Clay Mask Workshop

ERIC Educational Resources Information Center

Gamble, David L.

2012-01-01

Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

venice: Mask utility

NASA Astrophysics Data System (ADS)

Coupon, Jean

2018-02-01

venice reads a mask file (DS9 or fits type) and a catalogue of objects (ascii or fits type) to create a pixelized mask, find objects inside/outside a mask, or generate a random catalogue of objects inside/outside a mask. The program reads the mask file and checks if a point, giving its coordinates, is inside or outside the mask, i.e. inside or outside at least one polygon of the mask.

Structural colour printing from a reusable generic nanosubstrate masked for the target image

NASA Astrophysics Data System (ADS)

Rezaei, M.; Jiang, H.; Kaminska, B.

2016-02-01

Structural colour printing has advantages over traditional pigment-based colour printing. However, the high fabrication cost has hindered its applications in printing large-area images because each image requires patterning structural pixels in nanoscale resolution. In this work, we present a novel strategy to print structural colour images from a pixelated substrate which is called a nanosubstrate. The nanosubstrate is fabricated only once using nanofabrication tools and can be reused for printing a large quantity of structural colour images. It contains closely packed arrays of nanostructures from which red, green, blue and infrared structural pixels can be imprinted. To print a target colour image, the nanosubstrate is first covered with a mask layer to block all the structural pixels. The mask layer is subsequently patterned according to the target colour image to make apertures of controllable sizes on top of the wanted primary colour pixels. The masked nanosubstrate is then used as a stamp to imprint the colour image onto a separate substrate surface using nanoimprint lithography. Different visual colours are achieved by properly mixing the red, green and blue primary colours into appropriate ratios controlled by the aperture sizes on the patterned mask layer. Such a strategy significantly reduces the cost and complexity of printing a structural colour image from lengthy nanoscale patterning into high throughput micro-patterning and makes it possible to apply structural colour printing in personalized security features and data storage. In this paper, nanocone array grating pixels were used as the structural pixels and the nanosubstrate contains structures to imprint the nanocone arrays. Laser lithography was implemented to pattern the mask layer with submicron resolution. The optical properties of the nanocone array gratings are studied in detail. Multiple printed structural colour images with embedded covert information are demonstrated.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Cycle time reduction by Html report in mask checking flow

NASA Astrophysics Data System (ADS)

Chen, Jian-Cheng; Lu, Min-Ying; Fang, Xiang; Shen, Ming-Feng; Ma, Shou-Yuan; Yang, Chuen-Huei; Tsai, Joe; Lee, Rachel; Deng, Erwin; Lin, Ling-Chieh; Liao, Hung-Yueh; Tsai, Jenny; Bowhill, Amanda; Vu, Hien; Russell, Gordon

2017-07-01

The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity of each component of the reticle. Different design patterns on the mask will be mapped to different layers. Therefore, users may be able to review the whole reticle and check the interactions between different designs before the final mask pattern file is available. However, many types of MDCC check results, such as errors from overlapping patterns usually have very large and complex-shaped highlighted areas covering the boundary of the design. Users have to load the result OASIS file and overlap it to the original database that was assembled in MDCC process on a layout viewer, then search for the details of the check results. We introduce a quick result-reviewing method based on an html format report generated by Calibre® RVE. In the report generation process, we analyze and extract the essential part of result OASIS file to a result database (RDB) file by standard verification rule format (SVRF) commands. Calibre® RVE automatically loads the assembled reticle pattern and generates screen shots of these check results. All the processes are automatically triggered just after the MDCC process finishes. Users just have to open the html report to get the information they need: for example, check summary, captured images of results and their coordinates.

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Rates of initial acceptance of PAP masks and outcomes of mask switching.

PubMed

Bachour, Adel; Vitikainen, Pirjo; Maasilta, Paula

2016-05-01

Recently, we noticed a considerable development in alleviating problems related to positive airway pressure (PAP) masks. In this study, we report on the initial PAP mask acceptance rates and the effects of mask switching on mask-related symptoms. We prospectively collected all cases of mask switching in our sleep unit for a period of 14 months. At the time of the study, we used ResMed™ CPAP devices and masks. Mask switching was defined as replacing a mask used for at least 1 day with another type of mask. Changing to a different size but keeping the same type of mask did not count as mask switching. Switching outcomes were considered failed if the initial problem persisted or reappeared during the year that followed switching. Our patient pool was 2768. We recorded 343 cases of mask switching among 267 patients. Of the 566 patients who began new PAP therapy, 108 (39 women) had switched masks, yielding an initial mask acceptance rate of 81 %. The reason for switching was poor-fit/uncomfortable mask in 39 %, leak-related in 30 %, outdated model in 25 %, and nasal stuffiness in 6 % of cases; mask switching resolved these problems in 61 %. Mask switching occurred significantly (p = 0.037) more often in women and in new PAP users. The odds ratio for abandoning PAP therapy within 1 year after mask switching was 7.2 times higher (interval 4.7-11.1) than not switching masks. The initial PAP mask acceptance rate was high. Patients who switched their masks are at greater risk for abandoning PAP therapy.

Reflective Occultation Mask for Evaluation of Occulter Designs for Planet Finding

NASA Technical Reports Server (NTRS)

Hagopian, John; Lyon, Richard; Shiri, Shahram; Roman, Patrick

2011-01-01

Advanced formation flying occulter designs utilize a large occulter mask flying in formation with an imaging telescope to block and null starlight to allow imaging of faint planets in exosolar systems. A paper describes the utilization of subscale reflective occultation masks to evaluate formation flying occulter designs. The use of a reflective mask allows mounting of the occulter by conventional means and simplifies the test configuration. The innovation alters the test set-up to allow mounting of the mask using standard techniques to eliminate the problems associated with a standard configuration. The modified configuration uses a reflective set-up whereby the star simulator reflects off of a reflective occulting mask and into an evaluation telescope. Since the mask is sized to capture all rays required for the imaging test, it can be mounted directly to a supporting fixture without interfering with the beam. Functionally, the reflective occultation mask reflects light from the star simulator instead of transmitting it, with a highly absorptive carbon nanotube layer simulating the occulter blocking mask. A subscale telescope images the star source and companion dim source that represents a planet. The primary advantage of this is that the occulter can be mounted conventionally instead of using diffractive wires or magnetic levitation.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

Efficacies of designer biochars in improving biomass and nutrient uptake of winter wheat grown in a hard setting subsoil layer.

PubMed

Sigua, G C; Novak, J M; Watts, D W; Johnson, M G; Spokas, K

2016-01-01

In the Coastal Plains region of the United States, the hard setting subsoil layer of Norfolk soils results in low water holding capacity and nutrient retention, which often limits root development. In this region, the Norfolk soils are under intensive crop production that further depletes nutrients and reduces organic carbon (C). Incorporation of pyrolyzed organic residues or "biochars" can provide an alternative recalcitrant C source. However, biochar quality and effect can be inconsistent and different biochars react differently in soils. We hypothesized that addition of different designer biochars will have variable effects on biomass and nutrient uptake of winter wheat. The objective of this study was to investigate the effects of designer biochars on biomass productivity and nutrient uptake of winter wheat (Triticum aestivum L.) in a Norfolk's hard setting subsoil layer. Biochars were added to Norfolk's hard setting subsoil layer at the rate of 40 Mg ha(-1). The different sources of biochars were: plant-based (pine chips, PC); animal-based (poultry litter, PL); 50:50 blend (50% PC:50% PL); 80:20 blend (80% PC:20% PL); and hardwood (HW). Aboveground and belowground biomass and nutrient uptake of winter wheat varied significantly (p⩽0.0001) with the different designer biochar applications. The greatest increase in the belowground biomass of winter wheat over the control was from 80:20 blend of PC:PL (81%) followed by HW (76%), PC (59%) and 50:50 blend of PC:PL (9%). However, application of PL resulted in significant reduction of belowground biomass by about 82% when compared to the control plants. The average uptake of P, K, Ca, Mg, Na, Al, Fe, Cu and Zn in both the aboveground and belowground biomass of winter wheat varied remarkably with biochar treatments. Overall, our results showed promising significance for the treatment of a Norfolk's hard setting subsoil layer since designer biochars did improve both aboveground/belowground biomass and nutrient uptake

Bond-orientational analysis of hard-disk and hard-sphere structures.

PubMed

Senthil Kumar, V; Kumaran, V

2006-05-28

We report the bond-orientational analysis results for the thermodynamic, random, and homogeneously sheared inelastic structures of hard-disks and hard-spheres. The thermodynamic structures show a sharp rise in the order across the freezing transition. The random structures show the absence of crystallization. The homogeneously sheared structures get ordered at a packing fraction higher than the thermodynamic freezing packing fraction, due to the suppression of crystal nucleation. On shear ordering, strings of close-packed hard-disks in two dimensions and close-packed layers of hard-spheres in three dimensions, oriented along the velocity direction, slide past each other. Such a flow creates a considerable amount of fourfold order in two dimensions and body-centered-tetragonal (bct) structure in three dimensions. These transitions are the flow analogs of the martensitic transformations occurring in metals due to the stresses induced by a rapid quench. In hard-disk structures, using the bond-orientational analysis we show the presence of fourfold order. In sheared inelastic hard-sphere structures, even though the global bond-orientational analysis shows that the system is highly ordered, a third-order rotational invariant analysis shows that only about 40% of the spheres have face-centered-cubic (fcc) order, even in the dense and near-elastic limits, clearly indicating the coexistence of multiple crystalline orders. When layers of close-packed spheres slide past each other, in addition to the bct structure, the hexagonal-close-packed (hcp) structure is formed due to the random stacking faults. Using the Honeycutt-Andersen pair analysis and an analysis based on the 14-faceted polyhedra having six quadrilateral and eight hexagonal faces, we show the presence of bct and hcp signatures in shear ordered inelastic hard-spheres. Thus, our analysis shows that the dense sheared inelastic hard-spheres have a mixture of fcc, bct, and hcp structures.

Vitreous carbon mask substrate for X-ray lithography

DOEpatents

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Optimized distributed computing environment for mask data preparation

NASA Astrophysics Data System (ADS)

Ahn, Byoung-Sup; Bang, Ju-Mi; Ji, Min-Kyu; Kang, Sun; Jang, Sung-Hoon; Choi, Yo-Han; Ki, Won-Tai; Choi, Seong-Woon; Han, Woo-Sung

2005-11-01

As the critical dimension (CD) becomes smaller, various resolution enhancement techniques (RET) are widely adopted. In developing sub-100nm devices, the complexity of optical proximity correction (OPC) is severely increased and applied OPC layers are expanded to non-critical layers. The transformation of designed pattern data by OPC operation causes complexity, which cause runtime overheads to following steps such as mask data preparation (MDP), and collapse of existing design hierarchy. Therefore, many mask shops exploit the distributed computing method in order to reduce the runtime of mask data preparation rather than exploit the design hierarchy. Distributed computing uses a cluster of computers that are connected to local network system. However, there are two things to limit the benefit of the distributing computing method in MDP. First, every sequential MDP job, which uses maximum number of available CPUs, is not efficient compared to parallel MDP job execution due to the input data characteristics. Second, the runtime enhancement over input cost is not sufficient enough since the scalability of fracturing tools is limited. In this paper, we will discuss optimum load balancing environment that is useful in increasing the uptime of distributed computing system by assigning appropriate number of CPUs for each input design data. We will also describe the distributed processing (DP) parameter optimization to obtain maximum throughput in MDP job processing.

Comparison of face masks in the bag-mask ventilation of a manikin.

PubMed

Redfern, D; Rassam, S; Stacey, M R; Mecklenburgh, J S

2006-02-01

We conducted a study investigating the effectiveness of four face mask designs in the bag-mask ventilation of a special manikin adapted to simulate a difficult airway. Forty-eight anaesthetists volunteered to bag-mask ventilate the manikin for 3 min with four different face masks. The primary outcome of the study was to calculate mean percentage leak from the face masks over 3 min. Anaesthetists were also asked to rate the face masks using a visual analogue score. The single-use scented intersurgical face mask had the lowest mean leak (20%). This was significantly lower than the mean leak from the single-use, cushioned 7,000 series Air Safety Ltd. face mask (24%) and the reusable silicone Laerdal face mask (27%) but not significantly lower than the mean leak from the reusable anatomical intersurgical face mask (23%). There was a large variation in both performance and satisfaction between anaesthetists with each design. This highlights the importance of having a variety of face masks available for emergency use.

[Laryngeal mask].

PubMed

Villaverde Rozados, María José; Mos Reguera, M Esther; González Argibay, M Concepción; Sixto Gato, Sandra; Radío, Beatriz Alfonso; Fernández Díaz, María José

2003-11-01

A laryngeal mask is a very useful instrument to use both in easy as well as difficult handling situations related to the air tract. This mask is placed in the pharynx and it permits a patient to breathe in different modes, either spontaneously or mechanically. Different models are available; some even facilitate the tracheal intubation through the mask. The authors highlight that this type of mask does not protect nor isolate the air tract. As advantages, the authors point out its easy installation; thus, it is an alternative when an air tract presents difficulties; therefore, it is necessary that all personnel who have to deal with the air tract be aware of this mask and know how to handle it.

Advances in maskless and mask-based optical lithography on plastic flexible substrates

NASA Astrophysics Data System (ADS)

Barbu, Ionut; Ivan, Marius G.; Giesen, Peter; Van de Moosdijk, Michel; Meinders, Erwin R.

2009-12-01

Organic flexible electronics is an emerging technology with huge potential growth in the future which is likely to open up a complete new series of potential applications such as flexible OLED-based displays, urban commercial signage, and flexible electronic paper. The transistor is the fundamental building block of all these applications. A key challenge in patterning transistors on flexible plastic substrates stems from the in-plane nonlinear deformations as a consequence of foil expansion/shrinkage, moisture uptake, baking etc. during various processing steps. Optical maskless lithography is one of the potential candidates for compensating for these foil distortions by in-situ adjustment prior to exposure of the new layer image with respect to the already patterned layers. Maskless lithography also brings the added value of reducing the cost-of-ownership related to traditional mask-based tools by eliminating the need for expensive masks. For the purpose of this paper, single-layer maskless exposures at 355 nm were performed on gold-coated poly(ethylenenaphthalate) (PEN) flexible substrates temporarily attached to rigid carriers to ensure dimensional stability during processing. Two positive photoresists were employed for this study and the results on plastic foils were benchmarked against maskless as well as mask-based (ASML PAS 5500/100D stepper) exposures on silicon wafers.

Nasal mask ventilation is better than face mask ventilation in edentulous patients.

PubMed

Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

2016-01-01

Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients.

Masking technique for coating thickness control on large and strongly curved aspherical optics.

PubMed

Sassolas, B; Flaminio, R; Franc, J; Michel, C; Montorio, J-L; Morgado, N; Pinard, L

2009-07-01

We discuss a method to control the coating thickness deposited onto large and strongly curved optics by ion beam sputtering. The technique uses an original design of the mask used to screen part of the sputtered materials. A first multielement mask is calculated from the measured two-dimensional coating thickness distribution. Then, by means of an iterative process, the final mask is designed. By using such a technique, it has been possible to deposit layers of tantalum pentoxide having a high thickness gradient onto a curved substrate 500 mm in diameter. Residual errors in the coating thickness profile are below 0.7%.

Nasal mask ventilation is better than face mask ventilation in edentulous patients

PubMed Central

Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

2016-01-01

Background and Aims: Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Material and Methods: Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. Results: A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Conclusion: Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients. PMID:27625477

"The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

ERIC Educational Resources Information Center

Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

2015-01-01

Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

Mask automation: need a revolution in mask makers and equipment industry

NASA Astrophysics Data System (ADS)

Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

2013-09-01

As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

A cluster randomised trial of cloth masks compared with medical masks in healthcare workers.

PubMed

MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

2015-04-22

The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go

A cluster randomised trial of cloth masks compared with medical masks in healthcare workers

PubMed Central

MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

2015-01-01

Objective The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. Setting 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. Participants 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Intervention Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Main outcome measure Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. Results The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. Conclusions This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Trial registration number Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. PMID

Hardness and microstructure analysis of damaged gear caused by adhesive wear

NASA Astrophysics Data System (ADS)

Mahendra, Rizky Budi; Nugroho, Sri; Ismail, Rifky

2018-03-01

This study was a result from research on repairing project of damaged elevator gear box. The objective of this research is to analyze the failure part on elevator gearbox at flourmill factory. The equipment was damaged after one year installed and running on factory. Severe wear was occurred on high speed helical gear. These helical gear was one of main part of elevator gearbox in flour mill manufacture. Visually, plastic deformation didn't occurred and not visible on the failure helical gear shaft. Some test would be performed to check the chemical composition, microstructure and hardness of failure helical gear. The material of failure helical gear shaft was a medium carbon steel alloy. The microstructure was showed a martensitic phase formed on the surface to the center area of gear shaft. Otherwise, the depth of hardness layer slight formed on surface and lack depth of hardness layer was a main trigger of severe wear. It was not enough to resist wear due to friction caused by rolling and sliding on surface between high speed gear and low speed gear. Enhancement of hardness layer on surface and depth of hardness layer will make the component has more long life time. Furthermore, to perform next research is needed to analyze the reliability of enhanced hardness on layer and depth of hardness layer on helical gear shaft.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

EUV mask manufacturing readiness in the merchant mask industry

NASA Astrophysics Data System (ADS)

Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

2017-10-01

As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for

Release of MEMS devices with hard-baked polyimide sacrificial layer

NASA Astrophysics Data System (ADS)

Boroumand Azad, Javaneh; Rezadad, Imen; Nath, Janardan; Smith, Evan; Peale, Robert E.

2013-03-01

Removal of polyimides used as sacrificial layer in fabricating MEMS devices can be challenging after hardbaking, which may easily result by the end of multiple-step processing. We consider the specific commercial co-developable polyimide ProLift 100 (Brewer Science). Excessive heat hardens this material, so that during wet release in TMAH based solvents, intact sheets break free from the substrate, move around in the solution, and break delicate structures. On the other hand, dry reactive-ion etching of hard-baked ProLift is so slow, that MEMS structures are damaged from undesirably-prolonged physical bombardment by plasma ions. We found that blanket exposure to ultraviolet light allows rapid dry etch of the ProLift surrounding the desired structures without damaging them. Subsequent removal of ProLift from under the devices can then be safely performed using wet or dry etch. We demonstrate the approach on PECVD-grown silicon-oxide cantilevers of 100 micron × 100 micron area supported 2 microns above the substrate by ~100-micron-long 8-micron-wide oxide arms.

Group electronegativity for prediction of materials hardness.

PubMed

Li, Keyan; Yang, Peng; Niu, Lingxiao; Xue, Dongfeng

2012-06-28

We have developed a method to predict the hardness of materials containing ultrastrong anionic polyhedra, dense atomic clusters, and layers stacked through van der Waals bonds on the basis of group electronegativity. By considering these polyhedra, clusters, and layers as groups that behave as rigid unities like superatoms bonding to other atoms or groups, the hardness values of materials such as oxysalts, T-carbon, and graphite were quantitatively calculated, and the results are consistent with the available experiments. We found that the hardness of materials containing these artificial groups is determined by the bonds between the groups and other atoms or groups, rather than by the weakest bonds. This work sheds light on the nature of materials hardness and the design of novel inorganic crystal materials.

Lithographic process window optimization for mask aligner proximity lithography

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Erdmann, Andreas; Ünal, Nezih; Hofmann, Ulrich; Hennemeyer, Marc; Zoberbier, Ralph; Nguyen, David; Brugger, Juergen

2014-03-01

We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation and 3D resist development. The methodology was tested for the practical example of lines and spaces, 5 micron half-pitch, printed in a 1 micron thick layer of AZ® 1512HS1 positive photoresist on a silicon wafer. A SUSS MicroTec MA8 mask aligner, equipped with MO Exposure Optics® was used in simulation and experiment. MO Exposure Optics® is the latest generation of illumination systems for mask aligners. MO Exposure Optics® provides telecentric illumination and excellent light uniformity over the full mask field. MO Exposure Optics® allows the lithography engineer to freely shape the angular spectrum of the illumination light (customized illumination), which is a mandatory requirement for process window optimization. Three different illumination settings have been tested for 0 to 100 micron proximity gap. The results obtained prove, that the introduced process window methodology is a major step forward to obtain more robust processes in mask aligner lithography. The most remarkable outcome of the presented study is that a smaller exposure gap does not automatically lead to better print results in proximity lithography - what the "good instinct" of a lithographer would expect. With more than 5'000 mask aligners installed in research and industry worldwide, the proposed process window methodology might have significant impact on yield improvement and cost saving in industry.

Competing for Consciousness: Prolonged Mask Exposure Reduces Object Substitution Masking

ERIC Educational Resources Information Center

Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

2011-01-01

In object substitution masking (OSM) a sparse, temporally trailing 4-dot mask impairs target identification, even though it has different contours from, and does not spatially overlap with the target. Here, we demonstrate a previously unknown characteristic of OSM: Observers show reduced masking at prolonged (e.g., 640 ms) relative to intermediate…

Improved mask-based CD uniformity for gridded-design-rule lithography

NASA Astrophysics Data System (ADS)

Faivishevsky, Lev; Khristo, Sergey; Sagiv, Amir; Mangan, Shmoolik

2009-03-01

The difficulties encountered during lithography of state-of-the-art 2D patterns are formidable, and originate from the fact that deep sub-wavelength features are being printed. This results in a practical limit of k1 >=0.4 as well as a multitude of complex restrictive design rules, in order to mitigate or minimize lithographic hot spots. An alternative approach, that is gradually attracting the lithographic community's attention, restricts the design of critical layers to straight, dense lines (a 1D grid), that can be relatively easily printed using current lithographic technology. This is then followed by subsequent, less critical trimming stages to obtain circuit functionality. Thus, the 1D gridded approach allows hotspot-free, proximity-effect free lithography of ultra low- k1 features. These advantages must be supported by a stable CD control mechanism. One of the overriding parameters impacting CDU performance is photo mask quality. Previous publications have demonstrated that IntenCDTM - a novel, mask-based CDU mapping technology running on Applied Materials' Aera2TM aerial imaging mask inspection tool - is ideally fit for detecting mask-based CDU issues in 1D (L&S) patterned masks for memory production. Owing to the aerial nature of image formation, IntenCD directly probes the CD as it is printed on the wafer. In this paper we suggest that IntenCD is naturally fit for detecting mask-based CDU issues in 1D GDR masks. We then study a novel method of recovering and quantifying the physical source of printed CDU, using a novel implementation of the IntenCD technology. We demonstrate that additional, simple measurements, which can be readily performed on board the Aera2TM platform with minimal throughput penalty, may complement IntenCD and allow a robust estimation of the specific nature and strength of mask error source, such as pattern width variation or phase variation, which leads to CDU issues on the printed wafer. We finally discuss the roles played by

Effect of process parameters on hardness, temperature profile and solidification of different layers processed by direct metal laser sintering (DMLS)

NASA Astrophysics Data System (ADS)

Ahmed, Sazzad Hossain; Mian, Ahsan; Srinivasan, Raghavan

2016-07-01

In DMLS process objects are fabricated layer by layer from powdered material by melting induced by a controlled laser beam. Metallic powder melts and solidifies to form a single layer. Solidification map during layer formation is an important route to characterize micro-structure and grain morphology of sintered layer. Generally, solidification leads to columnar, equiaxed or mixture of these two types grain morphology depending on solidification rate and thermal gradient. Eutectic or dendritic structure can be formed in fully equiaxed zone. This dendritic growth has a large effect on material properties. Smaller dendrites generally increase ductility of the layer. Thus, materials can be designed by creating desired grain morphology in certain regions using DMLS process. To accomplish this, hardness, temperature distribution, thermal gradient and solidification cooling rate in processed layers will be studied under change of process variables by using finite element analysis, with specific application to Ti-6Al-4V.

How a (sub)Cellular Coincidence Detection Mechanism Featuring Layer-5 Pyramidal Cells May Help Produce Various Visual Phenomena.

PubMed

Bachmann, Talis

2015-01-01

Perceptual phenomena such as spatio-temporal illusions and masking are typically explained by psychological (cognitive) processing theories or large-scale neural theories involving inter-areal connectivity and neural circuits comprising of hundreds or more interconnected single cells. Subcellular mechanisms are hardly used for such purpose. Here, a mechanistic theoretical view is presented on how a subcellular brain mechanism of integration of presynaptic signals that arrive at different compartments of layer-5 pyramidal neurons could explain a couple of spatiotemporal visual-phenomenal effects unfolding along very brief time intervals within the range of the sub-second temporal scale.

Software-based data path for raster-scanned multi-beam mask lithography

NASA Astrophysics Data System (ADS)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales

Method for the manufacture of phase shifting masks for EUV lithography

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

2006-04-04

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Tailoring the structural and magnetic properties of masked CoPt thin films using ion implantation

NASA Astrophysics Data System (ADS)

Kumar, Durgesh; Gupta, Surbhi; Jin, Tianli; Nongjai, R.; Asokan, K.; Piramanayagam, S. N.

2018-05-01

The effects of ion implantations through a mask on the structural and magnetic properties of Co80Pt20 films were investigated. The mask was patterned using the self-assembly of diblock copolymers. For implantation, high (40 keV for 14N+ and 100 keV for 40Ar+) and low (7.5 keV for 14N+ and 4.5 keV for 40Ar+) energy 14N+ and 40Ar+ ions were used to modify the structural and magnetic properties of these films. X-ray diffraction and TRIM simulations were performed for understanding the structural changes due to ion implantations. These results revealed the intermixing of Co atoms in lower layers and lattice expansion in Co80Pt20 magnetic and Ru layers. A lateral straggling of Co caused an increase in the exchange coupling in the masked region. Depletion of Co atoms in Co80Pt20 layer caused a decrease in the anisotropy constant, which were further confirmed by the alternating gradient force magnetometer and magnetic force microscopy results. The magnetic force microscopy images showed an increase in domain width and domain wall width confirming the above-mentioned effects.

2013 mask industry survey

NASA Astrophysics Data System (ADS)

Malloy, Matt

2013-09-01

A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

Design and development of next-generation bottom anti-reflective coatings for 45nm process with hyper NA lithography

NASA Astrophysics Data System (ADS)

Nakajima, Makoto; Sakaguchi, Takahiro; Hashimoto, Keisuke; Sakamoto, Rikimaru; Kishioka, Takahiro; Takei, Satoshi; Enomoto, Tomoyuki; Nakajima, Yasuyuki

2006-03-01

Integrated circuit manufacturers are consistently seeking to minimize device feature dimensions in order to reduce chip size and increase integration level. Feature sizes on chips are achieved sub 65nm with the advanced 193nm microlithography process. R&D activities of 45nm process have been started so far, and 193nm lithography is used for this technology. The key parameters for this lithography process are NA of exposure tool, resolution capability of resist, and reflectivity control with bottom anti-reflective coating (BARC). In the point of etching process, single-layer resist process can't be applied because resist thickness is too thin for getting suitable aspect ratio. Therefore, it is necessary to design novel BARC system and develop hard mask materials having high etching selectivity. This system and these materials can be used for 45nm generation lithography. Nissan Chemical Industries, Ltd. and Brewer Science, Inc. have been designed and developed the advanced BARCs for the above propose. In order to satisfy our target, we have developed novel BARC and hard mask materials. We investigated the multi-layer resist process stacked 4 layers (resist / thin BARC / silicon-contained BARC (Si-ARC) / spin on carbon hard mask (SOC)) (4 layers process). 4 layers process showed the excellent lithographic performance and pattern transfer performance. In this paper, we will discuss the detail of our approach and materials for 4 layers process.

Masking Period Patterns & Forward Masking for Speech-Shaped Noise: Age-related effects

PubMed Central

Grose, John H.; Menezes, Denise C.; Porter, Heather L.; Griz, Silvana

2015-01-01

Objective The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to non-simultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Design Participants included younger (n = 11), middle-aged (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions, and assessed how well the temporal window fits accounted for these data. Results The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. Conclusions This study demonstrated an age-related increase in susceptibility to non-simultaneous masking, supporting the hypothesis that exacerbated non-simultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data suggesting an association between susceptibility to forward masking and speech understanding in modulated noise. PMID:26230495

Hard X-ray (greater than 10 keV) telescope for space astronomy from the Moon

NASA Astrophysics Data System (ADS)

Frontera, F.; de Chiara, P.; Pasqualini, G.

1994-06-01

The use of the Moon as site for deep observations of astrophysical sources in hard X-rays (greater than 10 keV) is very exciting, in spite of several technological problems to be solved. A strong limitation to the sensitivity of hard X-ray experiments is imposed by the use of direct-viewing (with or without masks) detectors. We propose a lunar hard X-ray observatory, (LHEXO), that makes use of a hard X-ray concentrator which is based on the use of confocal paraboloidal mirrors made of mosaic crystals of graphite (002). In this paper we describe telescope concept and its expected performances.

High resolution imaging and lithography with hard x rays using parabolic compound refractive lenses

NASA Astrophysics Data System (ADS)

Schroer, C. G.; Benner, B.; Günzler, T. F.; Kuhlmann, M.; Zimprich, C.; Lengeler, B.; Rau, C.; Weitkamp, T.; Snigirev, A.; Snigireva, I.; Appenzeller, J.

2002-03-01

Parabolic compound refractive lenses are high quality optical components for hard x rays. They are particularly suited for full field imaging, with applications in microscopy and x-ray lithography. Taking advantage of the large penetration depth of hard x rays, the interior of opaque samples can be imaged with submicrometer resolution. To obtain the three-dimensional structure of a sample, microscopy is combined with tomographic techniques. In a first hard x-ray lithography experiment, parabolic compound refractive lenses have been used to project the reduced image of a lithography mask onto a resist. Future developments are discussed.

Performance of repaired defects and attPSM in EUV multilayer masks

NASA Astrophysics Data System (ADS)

Deng, Yunfei; La Fontaine, Bruno; Neureuther, Andrew R.

2002-12-01

The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using rigorous electromagnetic simulation with TEMPEST. Typical topographies produced by treatment techniques in the literature such as removal of top layers and compaction produced by electron-beam heating are considered. Isolated defects on/near the surface repaired by material removal are shown to result in an image intensity within 5% of the clear field value. Deeply buried defects within the multilayer treated by electron-beam heating can be repaired to 3% of the clear field but over repair can result in some degradation. Compaction from a 6.938 nm period to a 6.312 nm period shows a 540° phase-shift and an intensity reduced to about 6% suggesting such a treatment may be used to create attenuated phase-shifting masks for EUV. The quality of the aerial image for such a mask is studied as a function of the lateral transition distance between treated and untreated regions.

Evaluation of a ''CMOS'' Imager for Shadow Mask Hard X-ray Telescope

NASA Technical Reports Server (NTRS)

Desai, Upendra D.; Orwig, Larry E.; Oergerle, William R. (Technical Monitor)

2002-01-01

We have developed a hard x-ray coder that provides high angular resolution imaging capability using a coarse position sensitive image plane detector. The coder consists of two Fresnel zone plates. (FZP) Two such 'FZP's generate Moire fringe patterns whose frequency and orientation define the arrival direction of a beam with respect to telescope axis. The image plane detector needs to resolve the Moire fringe pattern. Pixilated detectors can be used as an image plane detector. The recently available 'CMOS' imager could provide a very low power large area image plane detector for hard x-rays. We have looked into a unit made by Rad-Icon Imaging Corp. The Shadow-Box 1024 x-ray camera is a high resolution 1024xl024 pixel detector of 50x50 mm area. It is a very low power, stand alone camera. We present some preliminary results of our investigation of evaluation of such camera.

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

What Is Being Masked in Object Substitution Masking?

ERIC Educational Resources Information Center

Gellatly, Angus; Pilling, Michael; Cole, Geoff; Skarratt, Paul

2006-01-01

Object substitution masking (OSM) is said to occur when a perceptual object is hypothesized that is mismatched by subsequent sensory evidence, leading to a new hypothesized object being substituted for the first. For example, when a brief target is accompanied by a longer lasting display of nonoverlapping mask elements, reporting of target…

Masking Period Patterns and Forward Masking for Speech-Shaped Noise: Age-Related Effects.

PubMed

Grose, John H; Menezes, Denise C; Porter, Heather L; Griz, Silvana

2016-01-01

The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to nonsimultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Participants included younger (n = 11), middle-age (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions and assessed how well the temporal window fits accounted for these data. The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. This study demonstrated an age-related increase in susceptibility to nonsimultaneous masking, supporting the hypothesis that exacerbated nonsimultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data, suggesting an association between susceptibility to forward masking and speech understanding in modulated noise.

2012 Mask Industry Survey

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.

2012-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

3D printed facial laser scans for the production of localised radiotherapy treatment masks - A case study.

PubMed

Briggs, Matthew; Clements, Helen; Wynne, Neil; Rennie, Allan; Kellett, Darren

This study investigates the use of 3D printing for patients that require localised radiotherapy treatment to the face. The current process involves producing a lead mask in order to protect the healthy tissue from the effects of the radiotherapy. The mask is produced by applying a thermoplastic sheet to the patient's face and allowing to set hard. This can then be used as a mould to create a plaster impression of the patient's face. A sheet of lead is then hammered on to the plaster to create a bespoke fitted face mask. This process can be distressing for patients and can be problematic when the patient is required to remain motionless for a prolonged time while the thermoplastic sets. In this study, a 1:1 scale 3D print of a patient's face was generated using a laser scanner. The lead was hammered directly on to the surface of the 3D print in order to create a bespoke fitted treatment mask. This eliminated the thermoplastic moulding stage and significantly reduced the time needed for the patient to be in clinic. The higher definition impression of the the face resulted in a more accurate, better fitting treatment mask.

Robust source and mask optimization compensating for mask topography effects in computational lithography.

PubMed

Li, Jia; Lam, Edmund Y

2014-04-21

Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.

Designing to win in sub-90nm mask production

NASA Astrophysics Data System (ADS)

Zhang, Yuan

2005-11-01

An informal survey conducted with key customers by Photronics indicates that the time gap between technology nodes has accelerated in recent years. Previously the cycle was three years. However, between 130nm and 90nm there was less than a 2 year gap, and between 90nm and 65nm a 1.5 year gap exists. As a result, the technical challenges have increased substantially. In addition, mask costs are rising exponentially due to high capital equipment cost, a shrinking customer base, long write times and increased applications of 193nm EAPSM or AAPSM. Collaboration among EDA companies, mask houses and wafer manufacturers is now more important than ever. This paper will explore avenues for reducing mask costs, mainly in the areas of: write-time reduction through design for manufacturing (DFM), and yield improvement through specification relaxation. Our study conducted through layout vertex modeling suggests that a simple design shape such as a square versus a circle or an angled structure helps reduce shot count and write time. Shot count reduction through mask layout optimization, and advancement in new generation E-beam writers can reduce write time up to 65%. An advanced laser writer can produce those less critical E-beam layers in less than half the time of an e-beam writer. Additionally, the emerging imprint lithography brings new life and new challenges to the photomask industry with applications in many fields outside of the semiconductor industry. As immersion lithography is introduced for 45nm device production, polarization and MEEF effects due to the mask will become severe. Larger magnification not only provides benefits on CD control and MEEF, but also extends the life time of current 90nm/65nm tool sets where 45nm mask sets can be produced at a lower cost.

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

Modulation cues influence binaural masking-level difference in masking-pattern experiments.

PubMed

Nitschmann, Marc; Verhey, Jesko L

2012-03-01

Binaural masking patterns show a steep decrease in the binaural masking-level difference (BMLD) when masker and signal have no frequency component in common. Experimental threshold data are presented together with model simulations for a diotic masker centered at 250 or 500 Hz and a bandwidth of 10 or 100 Hz masking a sinusoid interaurally in phase (S(0)) or in antiphase (S(π)). Simulations with a binaural model, including a modulation filterbank for the monaural analysis, indicate that a large portion of the decrease in the BMLD in remote-masking conditions may be due to an additional modulation cue available for monaural detection. © 2012 Acoustical Society of America

Mask industry assessment: 2008

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2008-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment: 2009

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques

NASA Technical Reports Server (NTRS)

Policastro, Steven G. (Inventor); Woo, Dae-Shik (Inventor)

1983-01-01

A self-aligned method of implanting the edges of NMOS/SOS transistors is described. The method entails covering the silicon islands with a thick oxide layer, applying a protective photoresist layer over the thick oxide layer, and exposing the photoresist layer from the underside of the sapphire substrate thereby using the island as an exposure mask. Only the photoresist on the islands' edges will be exposed. The exposed photoresist is then removed and the thick oxide is removed from the islands edges which are then implanted.

Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

NASA Astrophysics Data System (ADS)

Yan, Pei-Yang; Zhang, Guojing; Gullikson, Eric M.; Goldberg, Ken A.; Benk, Markus P.

2015-03-01

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

Set Size and Mask Duration Do Not Interact in Object-Substitution Masking

ERIC Educational Resources Information Center

Argyropoulos, Ioannis; Gellatly, Angus; Pilling, Michael; Carter, Wakefield

2013-01-01

Object-substitution masking (OSM) occurs when a mask, such as four dots that surround a brief target item, onsets simultaneously with the target and offsets a short time after the target, rather than simultaneously with it. OSM is a reduction in accuracy of reporting the target with the temporally trailing mask, compared with the simultaneously…

Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

DOE PAGES

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun; ...

2017-12-01

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer

NASA Astrophysics Data System (ADS)

Lyons, Adam; Rio, David; Lee, Sook; Wallow, Thomas; Delorme, Maxence; Fumar-Pici, Anita; Kocsis, Michael; de Schepper, Peter; Greer, Michael; Stowers, Jason K.; Gillijns, Werner; De Simone, Danilo; Bekaert, Joost

2017-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.

EUVL mask dual pods to be used for mask shipping and handling in exposure tools

NASA Astrophysics Data System (ADS)

Gomei, Yoshio; Ota, Kazuya; Lystad, John; Halbmair, Dave; He, Long

2007-03-01

The concept of Extreme Ultra-Violet Lithography (EUVL) mask dual pods is proposed for use in both mask shipping and handling in exposure tools. The inner pod was specially designed to protect masks from particle contamination during shipping from mask houses to wafer factories. It can be installed in a load-lock chamber of exposure tools and evacuated while holding the mask inside. The inner pod upper cover is removed just before the mask is installed to a mask stage. Prototypes were manufactured and tested for shipping and for vacuum cycling. We counted particle adders through these actions with a detectable level of 54 nm and up. The adder count was close to zero, or we can say that the obtained result is within the noise level of our present evaluation environment. This indicates that the present concept is highly feasible for EUVL mask shipping and handling in exposure tools.

Mask strategy at International SEMATECH

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.

2002-08-01

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

Comparison of Ventilation With One-Handed Mask Seal With an Intraoral Mask Versus Conventional Cuffed Face Mask in a Cadaver Model: A Randomized Crossover Trial.

PubMed

Amack, Andrew J; Barber, Gary A; Ng, Patrick C; Smith, Thomas B; April, Michael D

2017-01-01

We compare received minute volume with an intraoral mask versus conventional cuffed face mask among medics obtaining a 1-handed mask seal on a cadaver model. This study comprised a randomized crossover trial of adult US Army combat medic volunteers participating in a cadaver laboratory as part of their training. We randomized participants to obtain a 1-handed mask seal during ventilation of a fresh unembalmed cadaver, first using either an intraoral airway device or conventional cuffed face mask. Participants obtained a 1-handed mask seal while a ventilator delivered 10 standardized 750-mL breaths during 1 minute. After a 5-minute rest period, they repeated the study with the alternative mask. The primary outcome measure was received minute volume as measured by a respirometer. Of 27 recruited participants, all completed the study. Median received minute volume was higher with the intraoral mask compared with conventional cuffed mask by 1.7 L (95% confidence interval 1.0 to 1.9 L; P<.001). The intraoral mask resulted in greater received minute volume received compared with conventional cuffed face mask during ventilation with a 1-handed mask seal in a cadaver model. The intraoral mask may prove a useful airway adjunct for ventilation. Copyright © 2016 American College of Emergency Physicians. Published by Elsevier Inc. All rights reserved.

Characteristics and issues of an EUVL mask applying phase-shifting thinner absorber for device fabrication

NASA Astrophysics Data System (ADS)

Seo, Hwan-Seok; Lee, Dong-Gun; Ahn, Byung-Sup; Han, Hakseung; Huh, Sungmin; Kang, In-Yong; Kim, Hoon; Kim, Dongwan; Kim, Seong-Sue; Cho, Han-Ku

2009-03-01

Phase-shifting EUVL masks applying thinner absorber are investigated to design optimum mask structure with less shadowing problems. Simulations using S-Litho show that H-V bias in Si capping structure is higher than that of Ru capping since the high n (= 0.999) of Si increases sensible absorber height. Phase differences obtained from the patterned masks using the EUV CSM are well-matched with the calculated values using the practical refractive index of absorber materials. Although the mask with 62.4-nm-thick absorber, among the in-house masks, shows the closest phase ΔΦ(= 176°) to the out-of-phase condition, higher NILS and contrast as well as lower H-V bias are obtained with 52.4-nm-thick absorber (ΔΦ = 151°) which has higher R/R0 ratio. MET results also show that lithography performances including MEEF, PW, and resist threshold (dose), are improved with thinner absorber structure. However, low OD in EUVL mask, especially in thinner absorber structure, results in light leakage from the neighboring exposure shots, and thus an appropriate light-shielding layer should be introduced.

Masks in Pedagogical Practice

ERIC Educational Resources Information Center

Roy, David

2016-01-01

In Drama Education mask work is undertaken and presented as both a methodology and knowledge base. There are numerous workshops and journal articles available for teachers that offer knowledge or implementation of mask work. However, empirical examination of the context or potential implementation of masks as a pedagogical tool remains…

Keeping African Masks Real

ERIC Educational Resources Information Center

Waddington, Susan

2012-01-01

Art is a good place to learn about our multicultural planet, and African masks are prized throughout the world as powerfully expressive artistic images. Unfortunately, multicultural education, especially for young children, can perpetuate stereotypes. Masks taken out of context lose their meaning and the term "African masks" suggests that there is…

Masks in Imaging Flow Cytometry

PubMed Central

Dominical, Venina; Samsel, Leigh; McCoy, J. Philip

2016-01-01

Data analysis in imaging flow cytometry incorporates elements of flow cytometry together with other aspects of morphological analysis of images. A crucial early step in this analysis is the creation of a mask to distinguish the portion of the image upon which further examination of specified features can be performed. Default masks are provided by the manufacturer of the imaging flow cytometer but additional custom masks can be created by the individual user for specific applications. Flawed or inaccurate masks can have a substantial negative impact on the overall analysis of a sample, thus great care must be taken to ensure the accuracy of masks. Here we discuss various types of masks and cite examples of their use. Furthermore we provide our insight for how to approach selecting and assessing the optimal mask for a specific analysis. PMID:27461256

Effects of non-simultaneous masking on the binaural masking level difference

PubMed Central

Buss, Emily; Hall III, Joseph W.

2011-01-01

The present study sought to clarify the role of non-simultaneous masking in the binaural masking level difference for maskers that fluctuate in level. In the first experiment the signal was a brief 500-Hz tone, and the masker was a bandpass noise (100–2000 Hz), with the initial and final 200-ms bursts presented at 40-dB spectrum level and the inter-burst gap presented at 20-dB spectrum level. Temporal windows were fitted to thresholds measured for a range of gap durations and signal positions within the gap. In the second experiment, individual differences in out of phase (NoSπ) thresholds were compared for a brief signal in a gapped bandpass masker, a brief signal in a steady bandpass masker, and a long signal in a narrowband (50-Hz-wide) noise masker. The third experiment measured brief tone detection thresholds in forward, simultaneous, and backward masking conditions for a 50- and for a 1900-Hz-wide noise masker centered on the 500-Hz signal frequency. Results are consistent with comparable temporal resolution in the in phase (NoSo) and NoSπ conditions and no effect of temporal resolution on individual observers’ ability to utilize binaural cues in narrowband noise. The large masking release observed for a narrowband noise masker may be due to binaural masking release from non-simultaneous, informational masking. PMID:21361448

Influence of design variables on radiation hardness of silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

1985-01-01

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Masks: The Artist in Me

ERIC Educational Resources Information Center

Skophammer, Karen

2009-01-01

Whether masks are made from cardboard, papier-mache, metal, wood, leather, fabric, clay or any combination of these materials, they bring out the artist in people. Young children like to wear masks when they play to pretend they were another person or animal. Masks let them fantasize and be creative. The author's students made masks representing…

Forward masking of frequency modulationa

PubMed Central

Byrne, Andrew J.; Wojtczak, Magdalena; Viemeister, Neal F.

2012-01-01

Forward masking of sinusoidal frequency modulation (FM) was measured with three types of maskers: FM, amplitude modulation (AM), and a masker created by combining the magnitude spectrum of an FM tone with random component phases. For the signal FM rates used (5, 20, and 40 Hz), an FM masker raised detection thresholds in terms of frequency deviation by a factor of about 5 relative to without a masker. The AM masker produced a much smaller effect, suggesting that FM-to-AM conversion did not contribute substantially to the FM forward masking. The modulation depth of an FM masker had a nonmonotonic effect, with maximal masking observed at an intermediate value within the range of possible depths, while the random-phase FM masker produced less masking, arguing against a spectrally-based explanation for FM forward masking. Broad FM-rate selectivity for forward masking was observed for both 4-kHz and 500-Hz carriers. Thresholds measured as a function of the masker-signal delay showed slow recovery from FM forward masking, with residual masking for delays up to 500 ms. The FM forward-masking effect resembles that observed for AM [Wojtczak and Viemeister (2005). J. Acoust. Soc. Am. 188, 3198–3210] and may reflect modulation-rate selective neural adaptation to FM. PMID:23145618

Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Osaka, Naoyuki

2009-01-01

A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

Demixing, surface nematization, and competing adsorption in binary mixtures of hard rods and hard spheres under confinement

NASA Astrophysics Data System (ADS)

Wu, Liang; Malijevský, Alexandr; Avendaño, Carlos; Müller, Erich A.; Jackson, George

2018-04-01

A molecular simulation study of binary mixtures of hard spherocylinders (HSCs) and hard spheres (HSs) confined between two structureless hard walls is presented. The principal aim of the work is to understand the effect of the presence of hard spheres on the entropically driven surface nematization of hard rod-like particles at surfaces. The mixtures are studied using a constant normal-pressure Monte Carlo algorithm. The surface adsorption at different compositions is examined in detail. At moderate hard-sphere concentrations, preferential adsorption of the spheres at the wall is found. However, at moderate to high pressure (density), we observe a crossover in the adsorption behavior with nematic layers of the rods forming at the walls leading to local demixing of the system. The presence of the spherical particles is seen to destabilize the surface nematization of the rods, and the degree of demixing increases on increasing the hard-sphere concentration.

Demixing, surface nematization, and competing adsorption in binary mixtures of hard rods and hard spheres under confinement.

PubMed

Wu, Liang; Malijevský, Alexandr; Avendaño, Carlos; Müller, Erich A; Jackson, George

2018-04-28

A molecular simulation study of binary mixtures of hard spherocylinders (HSCs) and hard spheres (HSs) confined between two structureless hard walls is presented. The principal aim of the work is to understand the effect of the presence of hard spheres on the entropically driven surface nematization of hard rod-like particles at surfaces. The mixtures are studied using a constant normal-pressure Monte Carlo algorithm. The surface adsorption at different compositions is examined in detail. At moderate hard-sphere concentrations, preferential adsorption of the spheres at the wall is found. However, at moderate to high pressure (density), we observe a crossover in the adsorption behavior with nematic layers of the rods forming at the walls leading to local demixing of the system. The presence of the spherical particles is seen to destabilize the surface nematization of the rods, and the degree of demixing increases on increasing the hard-sphere concentration.

On the origins of hardness of Cu–TiN nanolayered composites

DOE PAGES

Pathak, S.; Li, N.; Maeder, X.; ...

2015-07-18

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Supreme Laryngeal Mask Airway versus Face Mask during Neonatal Resuscitation: A Randomized Controlled Trial.

PubMed

Trevisanuto, Daniele; Cavallin, Francesco; Nguyen, Loi Ngoc; Nguyen, Tien Viet; Tran, Linh Dieu; Tran, Chien Dinh; Doglioni, Nicoletta; Micaglio, Massimo; Moccia, Luciano

2015-08-01

To assess the effectiveness of supreme laryngeal mask airway (SLMA) over face mask ventilation for preventing need for endotracheal intubation at birth. We report a prospective, randomized, parallel 1:1, unblinded, controlled trial. After a short-term educational intervention on SLMA use, infants ≥34-week gestation and/or expected birth weight ≥1500 g requiring positive pressure ventilation (PPV) at birth were randomized to resuscitation by SLMA or face mask. The primary outcome was the success rate of the resuscitation devices (SLMA or face mask) defined as the achievement of an effective PPV preventing the need for endotracheal intubation. We enrolled 142 patients (71 in SLMA and 71 in face mask group, respectively). Successful resuscitation rate was significantly higher with the SLMA compared with face mask ventilation (91.5% vs 78.9%; P = .03). Apgar score at 5 minutes was significantly higher in SLMA than in face mask group (P = .02). Neonatal intensive care unit admission rate was significantly lower in SLMA than in face mask group (P = .02). No complications related to the procedure occurred. In newborns with gestational age ≥34 weeks and/or expected birth weight ≥1500 g needing PPV at birth, the SLMA is more effective than face mask to prevent endotracheal intubation. The SLMA is effective in clinical practice after a short-term educational intervention. Registered with ClinicalTrials.gov: NCT01963936. Copyright © 2015 Elsevier Inc. All rights reserved.

Challenges and requirements of mask data processing for multi-beam mask writer

NASA Astrophysics Data System (ADS)

Choi, Jin; Lee, Dong Hyun; Park, Sinjeung; Lee, SookHyun; Tamamushi, Shuichi; Shin, In Kyun; Jeon, Chan Uk

2015-07-01

To overcome the resolution and throughput of current mask writer for advanced lithography technologies, the platform of e-beam writer have been evolved by the developments of hardware and software in writer. Especially, aggressive optical proximity correction (OPC) for unprecedented extension of optical lithography and the needs of low sensitivity resist for high resolution result in the limit of variable shaped beam writer which is widely used for mass production. The multi-beam mask writer is attractive candidate for photomask writing of sub-10nm device because of its high speed and the large degree of freedom which enable high dose and dose modulation for each pixel. However, the higher dose and almost unlimited appetite for dose modulation challenge the mask data processing (MDP) in aspects of extreme data volume and correction method. Here, we discuss the requirements of mask data processing for multi-beam mask writer and presents new challenges of the data format, data flow, and correction method for user and supplier MDP tool.

Effect of mask dead space and occlusion of mask holes on delivery of nebulized albuterol.

PubMed

Berlinski, Ariel

2014-08-01

Infants and children with respiratory conditions are often prescribed bronchodilators. Face masks are used to facilitate the administration of nebulized therapy in patients unable to use a mouthpiece. Masks incorporate holes into their design, and their occlusion during aerosol delivery has been a common practice. Masks are available in different sizes and different dead volumes. The aim of this study was to compare the effect of different degrees of occlusion of the mask holes and different mask dead space on the amount of nebulized albuterol available at the mouth opening in a model of a spontaneously breathing child. A breathing simulator mimicking infant (tidal volume [VT] = 50 mL, breathing frequency = 30 breaths/min, inspiratory-expiratory ratio [I:E] = 1:3), child (VT = 155 mL, breathing frequency = 25 breaths/min, I:E = 1:2), and adult (VT = 500 mL, breathing frequency = 15 breaths/min, I:E = 1:2) breathing patterns was connected to a collection filter hidden behind a face plate. A pediatric size mask and an adult size mask connected to a continuous output jet nebulizer were sealed to the face plate. Three nebulizers were loaded with albuterol sulfate (2.5 mg/3 mL) and operated with 6 L/min compressed air for 5 min. Experiments were repeated with different degrees of occlusion (0%, 50%, and 90%). Albuterol was extracted from the filter and measured with a spectrophotometer at 276 nm. Occlusion of the holes in the large mask did not increase the amount of albuterol in any of the breathing patterns. The amount of albuterol captured at the mouth opening did not change when the small mask was switched to the large mask, except with the breathing pattern of a child, and when the holes in the mask were 50% occluded (P = .02). Neither decreasing the dead space of the mask nor occluding the mask holes increased the amount of nebulized albuterol captured at the mouth opening.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Gestalt grouping and common onset masking.

PubMed

Kahan, Todd A; Mathis, Katherine M

2002-11-01

A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

Thermodynamic properties of a hard/soft-magnetic bilayer model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taaev, T. A., E-mail: taaev89@mail.ru; Khizriev, K. Sh.; Murtazaev, A. K.

2016-05-15

A model for describing the thermodynamic properties of a hard/soft-magnetic bilayer is proposed and thoroughly studied using the Monte Carlo method. Temperature dependences of the heat capacity, total magnetization, magnetizations of the hard- and soft-magnetic layers, total magnetic susceptibility, and susceptibilities of the hard- and soft-magnetic layers have been calculated by this method in the framework of the proposed model. The obtained temperature dependences of the heat capacity and magnetic susceptibility display double maxima that result from the two phase transitions that take place in the system. The influence of system dimensions on the thermodynamic properties of the model hasmore » been considered.« less

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

Lightweight Face Mask

NASA Technical Reports Server (NTRS)

Cason, W. E. I.; Baucom, R. M.; Evans, R. C.

1982-01-01

Lightweight face mask originally developed to protect epileptic patients during seizures could have many other medical and nonmedical applications such as muscular distrophy patients, football linesmen and riot-control police. Masks are extremely lightweight, the lightest of the configurations weighing only 136 grams.

Mechanics of an Asymmetric Hard-Soft Lamellar Nanomaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Weichao; Fredrickson, Glenn H.; Kramer, Edward J.

2016-03-24

Nanolayered lamellae are common structures in nanoscience and nanotechnology, but most are nearly symmetric in layer thickness. Here, we report on the structure and mechanics of highly asymmetric and thermodynamically stable soft–hard lamellar structures self-assembled from optimally designed PS 1-(PI-b-PS 2) 3 miktoarm star block copolymers. The remarkable mechanical properties of these strong and ductile PS (polystyrene)-based nanomaterials can be tuned over a broad range by varying the hard layer thickness while maintaining the soft layer thickness constant at 13 nm. Upon deformation, thin PS lamellae (<100 nm) exhibited kinks and predamaged/damaged grains, as well as cavitation in the softmore » layers. In contrast, deformation of thick lamellae (>100 nm) manifests cavitation in both soft and hard nanolayers. In situ tensile-SAXS experiments revealed the evolution of cavities during deformation and confirmed that the damage in such systems reflects both plastic deformation by shear and residual cavities. The aspects of the mechanics should point to universal deformation behavior in broader classes of asymmetric hard–soft lamellar materials, whose properties are just being revealed for versatile applications.« less

Gray scale x-ray mask

DOEpatents

Morales, Alfredo M [Livermore, CA; Gonzales, Marcela [Seattle, WA

2006-03-07

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Magnetic Yoking and Tunable Interactions in FePt-Based Hard/Soft Bilayers

PubMed Central

Gilbert, Dustin A.; Liao, Jung-Wei; Kirby, Brian J.; Winklhofer, Michael; Lai, Chih-Huang; Liu, Kai

2016-01-01

Magnetic interactions in magnetic nanostructures are critical to nanomagnetic and spintronic explorations. Here we demonstrate an extremely sensitive magnetic yoking effect and tunable interactions in FePt based hard/soft bilayers mediated by the soft layer. Below the exchange length, a thin soft layer strongly exchange couples to the perpendicular moments of the hard layer; above the exchange length, just a few nanometers thicker, the soft layer moments turn in-plane and act to yoke the dipolar fields from the adjacent hard layer perpendicular domains. The evolution from exchange to dipolar-dominated interactions is experimentally captured by first-order reversal curves, the ΔM method, and polarized neutron reflectometry, and confirmed by micromagnetic simulations. These findings demonstrate an effective yoking approach to design and control magnetic interactions in wide varieties of magnetic nanostructures and devices. PMID:27604428

New mask technology challenges

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.

2001-09-01

Mask technology development has accelerated dramatically in recent years from the glacial pace of the last three decades to the rapid and sometimes simultaneous introductions of new wavelengths and mask-based resolution enhancement techniques. The nature of the semiconductor business has also become one driven by time-to-market as an overwhelming factor in capturing market share and profit. These are among the factors that have created enormous stress on the mask industry to produce masks with enhanced capabilities, such as phase-shifting attenuators, sub-resolution assist bars, and optical proximity correction (OPC) features, while maintaining or reducing cost and cycle time. The mask can no longer be considered a commodity item that is purchased form the lowest-cost supplier. Instead, it must now be promoted as an integral part of the technical and business case for a total lithographic solution. Improving partnership between designer, mask-maker, and wafer lithographer will be the harbinger of success in finding a profitable balance of capability, cost, and cycle time. Likewise for equipment infrastructure development, stronger partnership on the international level is necessary to control development cost and mitigate schedule and technical risks.

Mask Industry Assessment: 2011

NASA Astrophysics Data System (ADS)

Chan, Y. David

2011-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the tenth in the current series of annual reports. With ongoing industry support, the report has been used as one of the baselines to gain perspective on the technical and business status of the mask and microelectronics industries. It continues to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was essentially the same as the 2005 through 2010 surveys. Questions are grouped into following categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

Mask Industry Assessment: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David Y.

2010-09-01

A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

Out-Phased Array Linearized Signaling (OPALS): A Practical Approach to Physical Layer Encryption

DTIC Science & Technology

2015-10-26

Out-Phased Array Linearized Signaling ( OPALS ): A Practical Approach to Physical Layer Encryption Eric Tollefson, Bruce R. Jordan Jr., and Joseph D... OPALS ) which provides a practical approach to physical-layer encryption through spatial masking. Our approach modifies just the transmitter to employ...of the channel. With Out-Phased Array Linearized Signaling ( OPALS ), we propose a new masking technique that has some advantages of each of the

Mask quality assessment

NASA Astrophysics Data System (ADS)

Regis, Larry; Paulson, Neil; Reynolds, James A.

1994-02-01

Product quality and timely delivery are two of the most important parameters, determining the success of a mask manufacturing facility. Because of the sensitivity of this data, however, very little is known about industry performance in these areas. Using Arthur Andersen & Co. to protect contributor identity, the authors have conducted a blind quality survey of mask shops which represents over 75% of the total merchant and captive mask volume in the US. Quantities such as return rate, plate survival yield, performance to schedule and reason for return were requested from 1988 through Q2 1993. Data is analyzed and conclusions are presented.

Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

NASA Astrophysics Data System (ADS)

Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

2011-11-01

Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle

Preliminary results for mask metrology using spatial heterodyne interferometry

NASA Astrophysics Data System (ADS)

Bingham, Philip R.; Tobin, Kenneth; Bennett, Marylyn H.; Marmillion, Pat

2003-12-01

Spatial heterodyne interferometry (SHI) is an imaging technique that captures both the phase and amplitude of a complex wavefront in a single high-speed image. This technology was developed at the Oak Ridge National Laboratory (ORNL) and is currently being implemented for semiconductor wafer inspection by nLine Corporation. As with any system that measures phase, metrology and inspection of surface structures is possible by capturing a wavefront reflected from the surface. The interpretation of surface structure heights for metrology applications can become very difficult with the many layers of various materials used on semiconductor wafers, so inspection (defect detection) has been the primary focus for semiconductor wafers. However, masks used for photolithography typically only contain a couple well-defined materials opening the doors to high-speed mask metrology in 3 dimensions in addition to inspection. Phase shift masks often contain structures etched out of the transparent substrate material for phase shifting. While these structures are difficult to inspect using only intensity, the phase and amplitude images captured with SHI can produce very good resolution of these structures. The phase images also provide depth information that is crucial for these phase shift regions. Preliminary testing has been performed to determine the feasibility of SHI for high-speed non-contact mask metrology using a prototype SHI system with 532 nm wavelength illumination named the Visible Alpha Tool (VAT). These results show that prototype SHI system is capable of performing critical dimension measurements on 400nm lines with a repeatability of 1.4nm and line height measurements with a repeatability of 0.26nm. Additionally initial imaging of an alternating aperture phase shift mask has shown the ability of SHI to discriminate between typical phase shift heights.

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

NASA Astrophysics Data System (ADS)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper

Inexpensive Masks for Film Deposition

NASA Technical Reports Server (NTRS)

Conley, W. R.

1986-01-01

Sputtered sprayed lines less than 2 millimeters wide made by superimposing masks with partially overlapping openings. Slits first cut in masks by stamping or other economical process. Masks superimposed so slits define new openings narrower than original slits.

Mask industry assessment trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-01-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

Masking Strategies for Image Manifolds.

PubMed

Dadkhahi, Hamid; Duarte, Marco F

2016-07-07

We consider the problem of selecting an optimal mask for an image manifold, i.e., choosing a subset of the pixels of the image that preserves the manifold's geometric structure present in the original data. Such masking implements a form of compressive sensing through emerging imaging sensor platforms for which the power expense grows with the number of pixels acquired. Our goal is for the manifold learned from masked images to resemble its full image counterpart as closely as possible. More precisely, we show that one can indeed accurately learn an image manifold without having to consider a large majority of the image pixels. In doing so, we consider two masking methods that preserve the local and global geometric structure of the manifold, respectively. In each case, the process of finding the optimal masking pattern can be cast as a binary integer program, which is computationally expensive but can be approximated by a fast greedy algorithm. Numerical experiments show that the relevant manifold structure is preserved through the datadependent masking process, even for modest mask sizes.

Optimising sulfuric acid hard coat anodising for an Al-Mg-Si wrought aluminium alloy

NASA Astrophysics Data System (ADS)

Bartolo, N.; Sinagra, E.; Mallia, B.

2014-06-01

This research evaluates the effects of sulfuric acid hard coat anodising parameters, such as acid concentration, electrolyte temperature, current density and time, on the hardness and thickness of the resultant anodised layers. A small scale anodising facility was designed and set up to enable experimental investigation of the anodising parameters. An experimental design using the Taguchi method to optimise the parameters within an established operating window was performed. Qualitative and quantitative methods of characterisation of the resultant anodised layers were carried out. The anodised layer's thickness, and morphology were determined using a light optical microscope (LOM) and field emission gun scanning electron microscope (FEG-SEM). Hardness measurements were carried out using a nano hardness tester. Correlations between the various anodising parameters and their effect on the hardness and thickness of the anodised layers were established. Careful evaluation of these effects enabled optimum parameters to be determined using the Taguchi method, which were verified experimentally. Anodised layers having hardness varying between 2.4-5.2 GPa and a thickness of between 20-80 μm were produced. The Taguchi method was shown to be applicable to anodising. This finding could facilitate on-going and future research and development of anodising, which is attracting remarkable academic and industrial interest.

More Realistic Face Model Surface Improves Relevance of Pediatric In-Vitro Aerosol Studies.

PubMed

Amirav, Israel; Halamish, Asaf; Gorenberg, Miguel; Omar, Hamza; Newhouse, Michael T

2015-01-01

Various hard face models are commonly used to evaluate the efficiency of aerosol face masks. Softer more realistic "face" surface materials, like skin, deform upon mask application and should provide more relevant in-vitro tests. Studies that simultaneously take into consideration many of the factors characteristic of the in vivo face are lacking. These include airways, various application forces, comparison of various devices, comparison with a hard-surface model and use of a more representative model face based on large numbers of actual faces. To compare mask to "face" seal and aerosol delivery of two pediatric masks using a soft vs. a hard, appropriately representative, pediatric face model under various applied forces. Two identical face models and upper airways replicas were constructed, the only difference being the suppleness and compressibility of the surface layer of the "face." Integrity of the seal and aerosol delivery of two different masks [AeroChamber (AC) and SootherMask (SM)] were compared using a breath simulator, filter collection and realistic applied forces. The soft "face" significantly increased the delivery efficiency and the sealing characteristics of both masks. Aerosol delivery with the soft "face" was significantly greater for the SM compared to the AC (p< 0.01). No statistically significant difference between the two masks was observed with the hard "face." The material and pliability of the model "face" surface has a significant influence on both the seal and delivery efficiency of face masks. This finding should be taken into account during in-vitro aerosol studies.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been

Flexible fabrication of multi-scale integrated 3D periodic nanostructures with phase mask

NASA Astrophysics Data System (ADS)

Yuan, Liang Leon

Top-down fabrication of artificial nanostructures, especially three-dimensional (3D) periodic nanostructures, that forms uniform and defect-free structures over large area with the advantages of high throughput and rapid processing and in a manner that can further monolithically integrate into multi-scale and multi-functional devices is long-desired but remains a considerable challenge. This thesis study advances diffractive optical element (DOE) based 3D laser holographic nanofabrication of 3D periodic nanostructures and develops new kinds of DOEs for advanced diffracted-beam control during the fabrication. Phase masks, as one particular kind of DOE, are a promising direction for simple and rapid fabrication of 3D periodic nanostructures by means of Fresnel diffraction interference lithography. When incident with a coherent beam of light, a suitable phase mask (e.g. with 2D nano-grating) can create multiple diffraction orders that are inherently phase-locked and overlap to form a 3D light interference pattern in the proximity of the DOE. This light pattern is typically recorded in photosensitive materials including photoresist to develop into 3D photonic crystal nanostructure templates. Two kinds of advanced phase masks were developed that enable delicate phase control of multiple diffraction beams. The first exploits femtosecond laser direct writing inside fused silica to assemble multiple (up to nine) orthogonally crossed (2D) grating layers, spaced on Talbot planes to overcome the inherent weak diffraction efficiency otherwise found in low-contrast volume gratings. A systematic offsetting of orthogonal grating layers to establish phase offsets over 0 to pi/2 range provided precise means for controlling the 3D photonic crystal structure symmetry between body centered tetragonal (BCT) and woodpile-like tetragonal (wTTR). The second phase mask consisted of two-layered nanogratings with small sub-wavelength grating periods and phase offset control. That was

Stretchable multilayer self-aligned interconnects fabricated using excimer laser photoablation and in situ masking

NASA Astrophysics Data System (ADS)

Lin, Kevin L.; Jain, Kanti

2009-02-01

Stretchable interconnects are essential to large-area flexible circuits and large-area sensor array systems, and they play an important role towards the realization of the realm of systems which include wearable electronics, sensor arrays for structural health monitoring, and sensor skins for tactile feedback. These interconnects must be reliable and robust for viability, and must be flexible, stretchable, and conformable to non-planar surfaces. This research describes the design, modeling, fabrication, and testing of stretchable interconnects on polymer substrates using metal patterns both as functional interconnect layers and as in-situ masks for excimer laser photoablation. Excimer laser photoablation is often used for patterning of polymers and thin-film metals. The fluences for photoablation of polymers are generally much lower than the threshold fluence for removal or damage of high-thermallyconductive metals; thus, metal thin films can be used as in-situ masks for polymers if the proper fluence is used. Selfaligned single-layer and multi-layer interconnects of various designs (rectilinear and 'meandering') have been fabricated, and certain 'meandering' interconnect designs can be stretched up to 50% uniaxially while maintaining good electrical conductivity and structural integrity. These results are compared with Finite Element Analysis (FEA) models and are observed to be in good accordance with them. This fabrication approach eliminates masks and microfabrication processing steps as compared to traditional fabrication approaches; furthermore, this technology is scalable for large-area sensor arrays and electronic circuits, adaptable for a variety of materials and interconnects designs, and compatible with MEMS-based capacitive sensor technology.

Optical effects of shadow masks on short circuit current of organic photovoltaic devices.

PubMed

Lin, Chi-Feng; Lin, Bing-Hong; Liu, Shun-Wei; Hsu, Wei-Feng; Zhang, Mi; Chiu, Tien-Lung; Wei, Mau-Kuo; Lee, Jiun-Haw

2012-03-21

In this paper, we have employed different shadow masks attached on top of organic photovoltaic (OPV) devices to study the optical effects of the former on the short circuit current (J(SC)). To rule out possible lateral electrical conduction and simplify the optical effects inside the device, a small-molecular heterojunction OPV device with a clear donor/acceptor interface was employed with a hole extraction layer exhibiting high resistance intentionally. Careful calibration with a shadow mask was employed. By attaching two layers of opaque masks in combination with a suitable holder design to shield the light from the edges and backside, the value of J(SC) approached that of the dark current, even under 1-sun radiation. With different illumination areas, we found that the photons illuminating the non-active region of the device contributed to 40% of the J(SC) by optical effect within the width of about 1 mm around the active region. When illuminating the non-active area with 12 mm to the active area, a 5.6 times improvement in the J(SC) was observed when the incident angle was 75°. With the introduction of a microstructured film onto the OPV device and an increase in the reflection from the non-active region, a 15% enhancement of the J(SC) compared to the control device was achieved.

Mask_explorer: A tool for exploring brain masks in fMRI group analysis.

PubMed

Gajdoš, Martin; Mikl, Michal; Mareček, Radek

2016-10-01

Functional magnetic resonance imaging (fMRI) studies of the human brain are appearing in increasing numbers, providing interesting information about this complex system. Unique information about healthy and diseased brains is inferred using many types of experiments and analyses. In order to obtain reliable information, it is necessary to conduct consistent experiments with large samples of subjects and to involve statistical methods to confirm or reject any tested hypotheses. Group analysis is performed for all voxels within a group mask, i.e. a common space where all of the involved subjects contribute information. To our knowledge, a user-friendly interface with the ability to visualize subject-specific details in a common analysis space did not yet exist. The purpose of our work is to develop and present such interface. Several pitfalls have to be avoided while preparing fMRI data for group analysis. One such pitfall is spurious non-detection, caused by inferring conclusions in the volume of a group mask that has been corrupted due to a preprocessing failure. We describe a MATLAB toolbox, called the mask_explorer, designed for prevention of this pitfall. The mask_explorer uses a graphical user interface, enables a user-friendly exploration of subject masks and is freely available. It is able to compute subject masks from raw data and create lists of subjects with potentially problematic data. It runs under MATLAB with the widely used SPM toolbox. Moreover, we present several practical examples where the mask_explorer is usefully applied. The mask_explorer is designed to quickly control the quality of the group fMRI analysis volume and to identify specific failures related to preprocessing steps and acquisition. It helps researchers detect subjects with potentially problematic data and consequently enables inspection of the data. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Mask pattern generator employing EPL technology

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

2003-08-01

Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

Visual Masking During Pursuit Eye Movements

ERIC Educational Resources Information Center

White, Charles W.

1976-01-01

Visual masking occurs when one stimulus interferes with the perception of another stimulus. Investigates which matters more for visual masking--that the target and masking stimuli are flashed on the same part of the retina, or, that the target and mask appear in the same place. (Author/RK)

Normalizing CO2 in chronic hyperventilation by means of a novel breathing mask: a pilot study.

PubMed

Johansen, Troels; Jack, Sandy; Dahl, Ronald

2013-10-01

Chronic idiopathic hyperventilation (CIH) is a form of dysfunctional breathing that has proven hard to treat effectively. To perform a preliminary test of the hypothesis that by periodically inducing normocapnia over several weeks, it would be possible to raise the normal resting level of CO2 and achieve a reduction of symptoms. Six CIH patients were treated 2 h a day for 4 weeks with a novel breathing mask. The mask was used to induce normocapnia in these chronically hypocapnic patients. Capillary blood gases and acid/base parameters [capillary CO2 tension (PcapCO2 ), pH, and standard base excess (SBE)] were measured at baseline and once each week at least 3 h after mask use, as well as spirometric values, breath-holding tolerance and hyperventilation symptoms as per the Nijmegen Questionnaire (NQ). The mask treatment resulted in a significant increase of resting PcapCO2 (+0.45 kPa, P = 0.028), a moderate increase in SBE (+1.4 mEq/L, P = 0.035) and a small reduction in daily symptoms (-3.8 NQ units, P = 0.046). The effect was most pronounced in the first 2 weeks of treatment. By inducing normocapnia with the breathing mask 2 h a day for 4 weeks, the normal resting CO2 and acid/base levels in chronically hyperventilating patients were partially corrected, and symptoms were reduced. © 2013 John Wiley & Sons Ltd.

Oronasal Masks Require a Higher Pressure than Nasal and Nasal Pillow Masks for the Treatment of Obstructive Sleep Apnea

PubMed Central

Deshpande, Sheetal; Joosten, Simon; Turton, Anthony; Edwards, Bradley A.; Landry, Shane; Mansfield, Darren R.; Hamilton, Garun S.

2016-01-01

Study Objectives: Oronasal masks are frequently used for continuous positive airway pressure (CPAP) treatment in patients with obstructive sleep apnea (OSA). The aim of this study was to (1) determine if CPAP requirements are higher for oronasal masks compared to nasal mask interfaces and (2) assess whether polysomnography and patient characteristics differed among mask preference groups. Methods: Retrospective analysis of all CPAP implementation polysomnograms between July 2013 and June 2014. Prescribed CPAP level, polysomnography results and patient data were compared according to mask type (n = 358). Results: Oronasal masks were used in 46%, nasal masks in 35% and nasal pillow masks in 19%. There was no difference according to mask type for baseline apnea-hypopnea index (AHI), body mass index (BMI), waist or neck circumference. CPAP level was higher for oronasal masks, 12 (10–15.5) cm H2O compared to nasal pillow masks, 11 (8–12.5) cm H2O and nasal masks, 10 (8–12) cm H2O, p < 0.0001 (Median [interquartile range]). Oronasal mask type, AHI, age, and BMI were independent predictors of a higher CPAP pressure (p < 0.0005, adjusted R2 = 0.26.). For patients with CPAP ≥ 15 cm H2O, there was an odds ratio of 4.5 (95% CI 2.5–8.0) for having an oronasal compared to a nasal or nasal pillow mask. Residual median AHI was higher for oronasal masks (11.3 events/h) than for nasal masks (6.4 events/h) and nasal pillows (6.7 events/h), p < 0.001. Conclusions: Compared to nasal mask types, oronasal masks are associated with higher CPAP pressures (particularly pressures ≥ 15 cm H2O) and a higher residual AHI. Further evaluation with a randomized control trial is required to definitively establish the effect of mask type on pressure requirements. Commentary: A commentary on this article appears in this issue on page 1209. Citation: Deshpande S, Joosten S, Turton A, Edwards BA, Landry S, Mansfield DR, Hamilton GS. Oronasal masks require a higher pressure than nasal and

a New Mask for Automatic Building Detection from High Density Point Cloud Data and Multispectral Imagery

NASA Astrophysics Data System (ADS)

Awrangjeb, M.; Siddiqui, F. U.

2017-11-01

In complex urban and residential areas, there are buildings which are not only connected with and/or close to one another but also partially occluded by their surrounding vegetation. Moreover, there may be buildings whose roofs are made of transparent materials. In transparent buildings, there are point returns from both the ground (or materials inside the buildings) and the rooftop. These issues confuse the previously proposed building masks which are generated from either ground points or non-ground points. The normalised digital surface model (nDSM) is generated from the non-ground points and usually it is hard to find individual buildings and trees using the nDSM. In contrast, the primary building mask is produced using the ground points, thereby it misses the transparent rooftops. This paper proposes a new building mask based on the non-ground points. The dominant directions of non-ground lines extracted from the multispectral imagery are estimated. A dummy grid with the target mask resolution is rotated at each dominant direction to obtain the corresponding height values from the non-ground points. Three sub-masks are then generated from the height grid by estimating the gradient function. Two of these sub-masks capture planar surfaces whose height remain constant in along and across the dominant direction, respectively. The third sub-mask contains only the flat surfaces where the height (ideally) remains constant in all directions. All the sub-masks generated in all estimated dominant directions are combined to produce the candidate building mask. Although the application of the gradient function helps in removal of most of the vegetation, the final building mask is obtained through removal of planar vegetation, if any, and tiny isolated false candidates. Experimental results on three Australian data sets show that the proposed method can successfully remove vegetation, thereby separate buildings from occluding vegetation and detect buildings with

Oronasal Masks Require a Higher Pressure than Nasal and Nasal Pillow Masks for the Treatment of Obstructive Sleep Apnea.

PubMed

Deshpande, Sheetal; Joosten, Simon; Turton, Anthony; Edwards, Bradley A; Landry, Shane; Mansfield, Darren R; Hamilton, Garun S

2016-09-15

Oronasal masks are frequently used for continuous positive airway pressure (CPAP) treatment in patients with obstructive sleep apnea (OSA). The aim of this study was to (1) determine if CPAP requirements are higher for oronasal masks compared to nasal mask interfaces and (2) assess whether polysomnography and patient characteristics differed among mask preference groups. Retrospective analysis of all CPAP implementation polysomnograms between July 2013 and June 2014. Prescribed CPAP level, polysomnography results and patient data were compared according to mask type (n = 358). Oronasal masks were used in 46%, nasal masks in 35% and nasal pillow masks in 19%. There was no difference according to mask type for baseline apnea-hypopnea index (AHI), body mass index (BMI), waist or neck circumference. CPAP level was higher for oronasal masks, 12 (10-15.5) cm H2O compared to nasal pillow masks, 11 (8-12.5) cm H2O and nasal masks, 10 (8-12) cm H2O, p < 0.0001 (Median [interquartile range]). Oronasal mask type, AHI, age, and BMI were independent predictors of a higher CPAP pressure (p < 0.0005, adjusted R(2) = 0.26.). For patients with CPAP ≥ 15 cm H2O, there was an odds ratio of 4.5 (95% CI 2.5-8.0) for having an oronasal compared to a nasal or nasal pillow mask. Residual median AHI was higher for oronasal masks (11.3 events/h) than for nasal masks (6.4 events/h) and nasal pillows (6.7 events/h), p < 0.001. Compared to nasal mask types, oronasal masks are associated with higher CPAP pressures (particularly pressures ≥ 15 cm H2O) and a higher residual AHI. Further evaluation with a randomized control trial is required to definitively establish the effect of mask type on pressure requirements. A commentary on this article appears in this issue on page 1209. © 2016 American Academy of Sleep Medicine.

Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

DOE PAGES

Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; ...

2015-05-15

Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

Neuroimaging somatosensory perception and masking.

PubMed

Meador, Kimford J; Revill, Kathleen Pirog; Epstein, Charles M; Sathian, K; Loring, David W; Rorden, Chris

2017-01-08

The specific cortical and subcortical regions involved in conscious perception and masking are uncertain. This study sought to identify brain areas involved in conscious perception of somatosensory stimuli during a masking task using functional magnetic resonance (fMRI) to contrast perceived vs. non-perceived targets. Electrical trains were delivered to the right index finger for targets and to the left index finger for masks. Target intensities were adjusted to compensate for threshold drift. Sham target trials were given in ~10% of the trials, and target stimuli without masks were delivered in one of the five runs (68 trials/run). When healthy dextral adult volunteers (n=15) perceived right hand targets, greater left- than right-cerebral activations were seen with similar patterns across the parietal cortex, thalamus, insula, claustrum, and midbrain. When targets were not perceived, left/right cerebral activations were similar overall. Directly comparing perceived vs. non-perceived stimuli with similar intensities in the masking task revealed predominate activations contralateral to masks. In contrast, activations were greater contralateral to perceived targets if no masks were given or if masks were given but target stimulus intensities were greater for perceived than non-perceived targets. The novel aspects of this study include: 1) imaging of cortical and subcortical activations in healthy humans related to somatosensory perception during a masking task, 2) activations in the human thalamus and midbrain related to perception of stimuli compared to matched non-perceived stimuli, and 3) similar left/right cerebral activation patterns across cortical, thalamic and midbrain structures suggesting interactions across all three levels during conscious perception in humans. Copyright © 2016 Elsevier Ltd. All rights reserved.

Direct Mask Overlay Inspection

NASA Astrophysics Data System (ADS)

Hsia, Liang-Choo; Su, Lo-Soun

1983-11-01

In this paper, we present a mask inspection methodology and procedure that involves direct X-Y measurements. A group of dice is selected for overlay measurement; four measurement targets were laid out in the kerf of each die. The measured coordinates are then fit-ted to either a "historical" grid, which reflects the individual tool bias, or to an ideal grid squares fashion. Measurements are done using a Nikon X-Y laser interferometric measurement system, which provides a reference grid. The stability of the measurement system is essential. We then apply appropriate statistics to the residual after the fit to determine the overlay performance. Statistical methods play an important role in the product disposition. The acceptance criterion is, however, a compromise between the cost for mask making and the final device yield. In order to satisfy the demand on mask houses for quality of masks and high volume, mixing lithographic tools in mask making has become more popular, in particular, mixing optical and E-beam tools. In this paper, we also discuss the inspection procedure for mixing different lithographic tools.

Coded mask telescopes for X-ray astronomy

NASA Astrophysics Data System (ADS)

Skinner, G. K.; Ponman, T. J.

1987-04-01

The principle of the coded mask techniques are discussed together with the methods of image reconstruction. The coded mask telescopes built at the University of Birmingham, including the SL 1501 coded mask X-ray telescope flown on the Skylark rocket and the Coded Mask Imaging Spectrometer (COMIS) projected for the Soviet space station Mir, are described. A diagram of a coded mask telescope and some designs for coded masks are included.

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control

NASA Astrophysics Data System (ADS)

Kojima, Yosuke; Shirasaki, Masanori; Chiba, Kazuaki; Tanaka, Tsuyoshi; Inazuki, Yukio; Yoshikawa, Hiroki; Okazaki, Satoshi; Iwase, Kazuya; Ishikawa, Kiichi; Ozawa, Ken

2007-05-01

For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF), and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection film and shielding film composed of MoSi are deposited under the Cr film. The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all items. The mask CD performance shows significant improvement. The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0 CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM for 45 nm node and beyond.

Central masking with bilateral cochlear implants

PubMed Central

Lin, Payton; Lu, Thomas; Zeng, Fan-Gang

2013-01-01

Across bilateral cochlear implants, contralateral threshold shift has been investigated as a function of electrode difference between the masking and probe electrodes. For contralateral electric masking, maximum threshold elevations occurred when the position of the masker and probe electrode was approximately place-matched across ears. The amount of masking diminished with increasing masker-probe electrode separation. Place-dependent masking occurred in both sequentially implanted ears, and was not affected by the masker intensity or the time delay from the masker onset. When compared to previous contralateral masking results in normal hearing, the similarities between place-dependent central masking patterns suggest comparable mechanisms of overlapping excitation in the central auditory nervous system. PMID:23363113

How do different brands of size 1 laryngeal mask airway compare with face mask ventilation in a dedicated laryngeal mask airway teaching manikin?

PubMed

Tracy, Mark Brian; Priyadarshi, Archana; Goel, Dimple; Lowe, Krista; Huvanandana, Jacqueline; Hinder, Murray

2018-05-01

International neonatal resuscitation guidelines recommend the use of laryngeal mask airway (LMA) with newborn infants (≥34 weeks' gestation or >2 kg weight) when bag-mask ventilation (BMV) or tracheal intubation is unsuccessful. Previous publications do not allow broad LMA device comparison. To compare delivered ventilation of seven brands of size 1 LMA devices with two brands of face mask using self-inflating bag (SIB). 40 experienced neonatal staff provided inflation cycles using SIB with positive end expiratory pressure (PEEP) (5 cmH 2 O) to a specialised newborn/infant training manikin randomised for each LMA and face mask. All subjects received prior education in LMA insertion and BMV. 12 415 recorded inflations for LMAs and face masks were analysed. Leak detected was lowest with i-gel brand, with a mean of 5.7% compared with face mask (triangular 42.7, round 35.7) and other LMAs (45.5-65.4) (p<0.001). Peak inspiratory pressure was higher with i-gel, with a mean of 28.9 cmH 2 O compared with face mask (triangular 22.8, round 25.8) and other LMAs (14.3-22.0) (p<0.001). PEEP was higher with i-gel, with a mean of 5.1 cmH 2 O compared with face mask (triangular 3.0, round 3.6) and other LMAs (0.6-2.6) (p<0.001). In contrast to other LMAs examined, i-gel had no insertion failures and all users found i-gel easy to use. This study has shown dramatic performance differences in delivered ventilation, mask leak and ease of use among seven different brands of LMA tested in a manikin model. This coupled with no partial or complete insertion failures and ease of use suggests i-gel LMA may have an expanded role with newborn resuscitation as a primary resuscitation device. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2018. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Mask ventilation with two different face masks in the delivery room for preterm infants: a randomized controlled trial.

PubMed

Cheung, D; Mian, Q; Cheung, P-Y; O'Reilly, M; Aziz, K; van Os, S; Pichler, G; Schmölzer, G M

2015-07-01

If an infant fails to initiate spontaneous breathing after birth, international guidelines recommend a positive pressure ventilation (PPV). However, PPV by face mask is frequently inadequate because of leak between the face and mask. Despite a variety of available face masks, none have been prospectively compared in a randomized fashion. We aimed to evaluate and compare leak between two commercially available round face masks (Fisher & Paykel (F&P) and Laerdal) in preterm infants <33 weeks gestational age in the delivery room. Infants born at the Royal Alexandra Hospital from April to September 2013 at <33 weeks gestational age who received mask PPV in the delivery room routinely had a flow sensor placed between the mask and T-piece resuscitator. Infants were randomly assigned to receive PPV with either a F&P or Laerdal face mask. All resuscitators were trained in the use of both face masks. We compared mask leak, airway pressures, tidal volume and ventilation rate between the two groups. Fifty-six preterm infants (n=28 in each group) were enrolled; mean±s.d. gestational age 28±3 weeks; birth weight 1210±448 g; and 30 (52%) were male. Apgar scores at 1 and 5 min were 5±3 and 7±2, respectively. Infants randomized to the F&P face mask and Laerdal face mask had similar mask leak (30 (25-38) versus 35 (24-46)%, median (interquartile range), respectively, P=0.40) and tidal volume (7.1 (4.9-8.9) versus 6.6 (5.2-8.9) ml kg(-1), P=0.69) during PPV. There were no significant differences in ventilation rate, inflation time or airway pressures between groups. The use of either face mask during PPV in the delivery room yields similar mask leak in preterm infants <33 weeks gestational age.

History and future of mask making

NASA Astrophysics Data System (ADS)

Levy, Ken L.

1996-12-01

The history of the mask industry has three main periods, which I call the Classical Period, the Dark Ages, and the Renaissance, by analogy with those periods in the history of Western Europe. During the Classical Period, people developed 1X masks and the technology to make them. In the Dark Ages, people exploited the equipment developed during the Classical Period to make 5X reduction reticle, ending the nobility of mask making. In today's Renaissance of mask making, a proliferation of mask types is requiring a rebirth of innovation and creativity. The Renaissance resembles the Classical Period: masks are once again strategic, and technological capability is once again the driver. Meanwhile, the mask industry is carrying forward the productivity and efficiency gains it achieved during the Dark Ages. We must create a new business and economic model to support these changes in the characteristics of the marketplace.

A Roman bronze statuette with gilded silver mask from Sardinia: an EDXRF study

NASA Astrophysics Data System (ADS)

Cesareo, Roberto; Brunetti, Antonio; D'Oriano, Rubens; Canu, Alba; Demontis, Gonaria Mattia; Celauro, Angela

2013-12-01

A Roman bronze statuette from the 2nd Century BC was recovered from a nuragic sanctuary close to Florinas, in the north of Sardinia. The facial portion of the statuette is covered by a silver mask, partially gilded and attached to the bronze by tin-lead welding. The silver mask was carefully analyzed by portable energy-dispersive X-ray fluorescence (EDXRF), a non-destructive and non-invasive method. The aim of the analysis was to reconstruct the layered structure of the silver gilt mask, and to determine homogeneity and thickness of the gold, silver and lead-tin sheets. This is possible by using the internal ratio of the X-ray lines, i.e. starting from the surface, Au (L α/L β), Ag (K α/K β), Au-L α/Ag-K α and Pb (L α/L β).The results were compared with those obtained with simulated X-ray spectra, obtained both experimentally and by using the Monte Carlo simulation technique.

Atomic layer deposition as pore diameter adjustment tool for nanoporous aluminum oxide injection molding masks.

PubMed

Miikkulainen, Ville; Rasilainen, Tiina; Puukilainen, Esa; Suvanto, Mika; Pakkanen, Tapani A

2008-05-06

The wetting properties of polypropylene (PP) surfaces were modified by adjusting the dimensions of the surface nanostructure. The nanostructures were generated by injection molding with nanoporous anodized aluminum oxide (AAO) as the mold insert. Atomic layer deposition (ALD) of molybdenum nitride film was used to control the pore diameters of the AAO inserts. The original 50-nm pore diameter of AAO was adjusted by depositing films of thickness 5, 10, and 15 nm on AAO. Bis(tert-butylimido)-bis(dimethylamido)molybdenum and ammonia were used as precursors in deposition. The resulting pore diameters in the nitride-coated AAO inserts were 40, 30, and 20 nm, respectively. Injection molding of PP was conducted with the coated inserts, as well as with the non-coated insert. Besides the pore diameter, the injection mold temperature was varied with temperatures of 50, 70, and 90 degrees C tested. Water contact angles of PP casts were measured and compared with theoretical contact angles calculated from Wenzel and Cassie-Baxter theories. The highest contact angle, 140 degrees , was observed for PP molded with the AAO mold insert with 30-nm pore diameter. The Cassie-Baxter theory showed better fit than the Wenzel theory to the experimental values. With the optimal AAO mask, the nanofeatures in the molded PP pieces were 100 nm high. In explanation of this finding, it is suggested that some sticking and stretching of the nanofeatures occurs during the molding. Increase in the mold temperature increased the contact angle.

Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)

NASA Astrophysics Data System (ADS)

Harashima, Noriyuki; Isozaki, Tatsuya; Kawanishi, Arata; Kanai, Shuichiro; Kageyama, Kagehiro; Iso, Hiroyuki; Chishima, Tatsuya

2017-07-01

Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.

The automatic back-check mechanism of mask tooling database and automatic transmission of mask tooling data

NASA Astrophysics Data System (ADS)

Xu, Zhe; Peng, M. G.; Tu, Lin Hsin; Lee, Cedric; Lin, J. K.; Jan, Jian Feng; Yin, Alb; Wang, Pei

2006-10-01

Nowadays, most foundries have paid more and more attention in order to reduce the CD width. Although the lithography technologies have developed drastically, mask data accuracy is still a big challenge than before. Besides, mask (reticle) price also goes up drastically such that data accuracy needs more special treatments.We've developed a system called eFDMS to guarantee the mask data accuracy. EFDMS is developed to do the automatic back-check of mask tooling database and the data transmission of mask tooling. We integrate our own EFDMS systems to engage with the standard mask tooling system K2 so that the upriver and the downriver processes of the mask tooling main body K2 can perform smoothly and correctly with anticipation. The competition in IC marketplace is changing from high-tech process to lower-price gradually. How to control the reduction of the products' cost more plays a significant role in foundries. Before the violent competition's drawing nearer, we should prepare the cost task ahead of time.

Oral mask ventilation is more effective than face mask ventilation after nasal surgery.

PubMed

Yazicioğlu, Dilek; Baran, Ilkay; Uzumcugil, Filiz; Ozturk, Ibrahim; Utebey, Gulten; Sayın, M Murat

2016-06-01

To evaluate and compare the face mask (FM) and oral mask (OM) ventilation techniques during anesthesia emergence regarding tidal volume, leak volume, and difficult mask ventilation (DMV) incidence. Prospective, randomized, crossover study. Operating room, training and research hospital. American Society of Anesthesiologists physical status I and II adult patients scheduled for nasal surgery. Patients in group FM-OM received FM ventilation first, followed by OM ventilation, and patients in group OM-FM received OM ventilation first, followed by FM ventilation, with spontaneous ventilation after deep extubation. The FM ventilation was applied with the 1-handed EC-clamp technique. The OM was placed only over the mouth, and the 1-handed EC-clamp technique was used again. A child's size FM was used for the OM ventilation technique, the mask was rotated, and the inferior part of the mask was placed toward the nose. The leak volume (MVleak), mean airway pressure (Pmean), and expired tidal volume (TVe) were assessed with each mask technique for 3 consecutive breaths. A mask ventilation grade ≥3 was considered DMV. DMV occurred more frequently during FM ventilation (75% with FM vs 8% with OM). In the FM-first sequence, the mean TVe was 249±61mL with the FM and 455±35mL with the OM (P=.0001), whereas in the OM-first sequence, it was 276±81mL with the FM and 409±37mL with the OM (P=.0001). Regardless of the order used, the OM technique significantly decreased the MVleak and increased the TVe when compared to the FM technique. During anesthesia emergence after nasal surgery the OM may offer an effective ventilation method as it decreases the incidence of DMV and the gas leak around the mask and provides higher tidal volume delivery compared with FM ventilation. Copyright © 2016 Elsevier Inc. All rights reserved.

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

NASA Astrophysics Data System (ADS)

Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

2014-10-01

A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

Mask industry assessment trend analysis

NASA Astrophysics Data System (ADS)

Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

2008-04-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into eight categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were added to the survey only in 2005; therefore, meaningful trend analysis is not available.

Micropellets coated with Kollicoat® Smartseal 30D for taste masking in liquid oral dosage forms.

PubMed

Dashevskiy, Andriy; Mohylyuk, Valentyn; Ahmed, Abid Riaz; Kolter, Karl; Guth, Felicitas; Bodmeier, Roland

2017-09-01

The objective of this study was to develop delivery systems for taste masking based on multiparticulates coated with Kollicoat ® Smartseal 30D formulated as liquid oral suspensions. Coating of particles containing bitter drugs with Kollicoat ® Smartseal reduced drug leaching into aqueous medium, especially when increasing pH, therefore can be used for the formulation of liquid dosage forms. Application of an intermediate layer of ion exchange resins between drug layer and coating can further decrease drug leaching into aqueous vehicle that is beneficial in terms of taste masking. Using optimized compositions of liquid vehicles such as addition of sugar alcohols and ion exchange resin, reconstitutable or ready-to-use liquid dosage forms with micropellets can be developed with bitter taste protection after redispersion lasting longer than 3 weeks, which exceeds the usual period of application.

Immunocytochemistry suggests that the prevalence of a sub-type of beta-proteins determines the hardness in the epidermis of the hard-shelled turtle.

PubMed

Alibardi, Lorenzo

2014-01-01

The corneous layer of the epidermis in hard-shelled turtles largely derives from the accumulation of beta-proteins as indicated by microscopic, in situ hybridization, and immunocytochemical and Western blotting analysis. The expression of mRNAs of one of the most common type of beta-proteins shows higher expression in upper spinosus and pre-corneous keratinocytes of growing scutes. Two beta-proteins of 14-16 kDa, indicated as Tu2 and Tu17 and representing two subtypes of beta-proteins co-accumulate in the thick corneous layer of the epidermis in hard-shelled turtle. The two beta-proteins apparently mix in differentiating and mature corneocytes although Tu2 appears more prevalent than Tu17. The specific role of the different subtypes in the formation of the hard corneous material of the carapace and plastron is not clear. It is hypothesized that the relative amount of beta-proteins belonging to the two subclasses in relation to the alpha-keratin meshwork present in keratinocytes contributes to the formation of a variably resistant and inflexible corneous layer. Tu17 may have a more globular structure than Tu2 and is likely present in denser areas of the corneous layer containing also alpha-keratin. The increase of cysteine-glycine-rich beta-proteins in the matrix located among alpha-keratin filaments may allow the formation of a hard corneous material, probably through increase of cross-bridge formation and hydrophobicity. © 2013 Wiley Periodicals, Inc.

Computing Challenges in Coded Mask Imaging

NASA Technical Reports Server (NTRS)

Skinner, Gerald

2009-01-01

This slide presaentation reviews the complications and challenges in developing computer systems for Coded Mask Imaging telescopes. The coded mask technique is used when there is no other way to create the telescope, (i.e., when there are wide fields of view, high energies for focusing or low energies for the Compton/Tracker Techniques and very good angular resolution.) The coded mask telescope is described, and the mask is reviewed. The coded Masks for the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL) instruments are shown, and a chart showing the types of position sensitive detectors used for the coded mask telescopes is also reviewed. Slides describe the mechanism of recovering an image from the masked pattern. The correlation with the mask pattern is described. The Matrix approach is reviewed, and other approaches to image reconstruction are described. Included in the presentation is a review of the Energetic X-ray Imaging Survey Telescope (EXIST) / High Energy Telescope (HET), with information about the mission, the operation of the telescope, comparison of the EXIST/HET with the SWIFT/BAT and details of the design of the EXIST/HET.

Summation versus suppression in metacontrast masking: On the potential pitfalls of using metacontrast masking to assess perceptual-motor dissociation.

PubMed

Cardoso-Leite, Pedro; Waszak, Florian

2014-07-01

A briefly flashed target stimulus can become "invisible" when immediately followed by a mask-a phenomenon known as backward masking, which constitutes a major tool in the cognitive sciences. One form of backward masking is termed metacontrast masking. It is generally assumed that in metacontrast masking, the mask suppresses activity on which the conscious perception of the target relies. This assumption biases conclusions when masking is used as a tool-for example, to study the independence between perceptual detection and motor reaction. This is because other models can account for reduced perceptual performance without requiring suppression mechanisms. In this study, we used signal detection theory to test the suppression model against an alternative view of metacontrast masking, referred to as the summation model. This model claims that target- and mask-related activations fuse and that the difficulty in detecting the target results from the difficulty to discriminate this fused response from the response produced by the mask alone. Our data support this alternative view. This study is not a thorough investigation of metacontrast masking. Instead, we wanted to point out that when a different model is used to account for the reduced perceptual performance in metacontrast masking, there is no need to postulate a dissociation between perceptual and motor responses to account for the data. Metacontrast masking, as implemented in the Fehrer-Raab situation, therefore is not a valid method to assess perceptual-motor dissociations.

Probing buried layers by photoelectron spectromicroscopy with hard x-ray excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiemann, C.; Patt, M.; Cramm, S.

We report about a proof-of-principle experiment which explores the perspectives of performing hard x-ray photoemission spectromicroscopy with high lateral resolution. Our results obtained with an energy-filtered photoemission microscope at the PETRA III storage ring facility using hard x-ray excitation up to 6.5 keV photon energy demonstrate that it is possible to obtain selected-area x-ray photoemission spectra from regions less than 500 nm in diameter.

Orion Emergency Mask Approach

NASA Technical Reports Server (NTRS)

Tuan, George C.; Graf, John C.

2008-01-01

Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction temperature and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

Orion Emergency Mask Approach

NASA Technical Reports Server (NTRS)

Tuan, George C.; Graf, John C.

2009-01-01

Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction time, breakthroughs, and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

More Realistic Face Model Surface Improves Relevance of Pediatric In-Vitro Aerosol Studies

PubMed Central

Amirav, Israel; Halamish, Asaf; Gorenberg, Miguel; Omar, Hamza; Newhouse, Michael T.

2015-01-01

Background Various hard face models are commonly used to evaluate the efficiency of aerosol face masks. Softer more realistic “face” surface materials, like skin, deform upon mask application and should provide more relevant in-vitro tests. Studies that simultaneously take into consideration many of the factors characteristic of the in vivo face are lacking. These include airways, various application forces, comparison of various devices, comparison with a hard-surface model and use of a more representative model face based on large numbers of actual faces. Aim To compare mask to “face” seal and aerosol delivery of two pediatric masks using a soft vs. a hard, appropriately representative, pediatric face model under various applied forces. Methods Two identical face models and upper airways replicas were constructed, the only difference being the suppleness and compressibility of the surface layer of the “face.” Integrity of the seal and aerosol delivery of two different masks [AeroChamber (AC) and SootherMask (SM)] were compared using a breath simulator, filter collection and realistic applied forces. Results The soft “face” significantly increased the delivery efficiency and the sealing characteristics of both masks. Aerosol delivery with the soft “face” was significantly greater for the SM compared to the AC (p< 0.01). No statistically significant difference between the two masks was observed with the hard “face.” Conclusions The material and pliability of the model “face” surface has a significant influence on both the seal and delivery efficiency of face masks. This finding should be taken into account during in-vitro aerosol studies. PMID:26090661

Migration from full-head mask to "open-face" mask for immobilization of patients with head and neck cancer.

PubMed

Li, Guang; Lovelock, D Michael; Mechalakos, James; Rao, Shyam; Della-Biancia, Cesar; Amols, Howard; Lee, Nancy

2013-09-06

To provide an alternative device for immobilization of the head while easing claustrophobia and improving comfort, an "open-face" thermoplastic mask was evaluated using video-based optical surface imaging (OSI) and kilovoltage (kV) X-ray radiography. A three-point thermoplastic head mask with a precut opening and reinforced strips was developed. After molding, it provided sufficient visible facial area as the region of interest for OSI. Using real-time OSI, the head motion of ten volunteers in the new mask was evaluated during mask locking and 15minutes lying on the treatment couch. Using a nose mark with reference to room lasers, forced head movement in open-face and full-head masks (with a nose hole) was compared. Five patients with claustrophobia were immobilized with open-face masks, set up using OSI and kV, and treated in 121 fractions, in which 61 fractions were monitored during treatment using real-time OSI. With the open-face mask, head motion was found to be 1.0 ± 0.6 mm and 0.4° ± 0.2° in volunteers during the experiment, and 0.8 ± 0.3 mm and 0.4° ± 0.2° in patients during treatment. These agree with patient motion calculated from pre-/post-treatment OSI and kV data using different anatomical landmarks. In volunteers, the head shift induced by mask-locking was 2.3 ± 1.7 mm and 1.8° ± 0.6°, and the range of forced movements in the open-face and full-head masks were found to be similar. Most (80%) of the volunteers preferred the open-face mask to the full-head mask, while claustrophobic patients could only tolerate the open-face mask. The open-face mask is characterized for its immobilization capability and can immobilize patients sufficiently (< 2 mm) during radiotherapy. It provides a clinical solution to the immobilization of patients with head and neck (HN) cancer undergoing radiotherapy, and is particularly beneficial for claustrophobic patients. This new open-face mask is readily adopted in radiotherapy clinic as a superior alternative

Mechanism of Na-Ion Storage in Hard Carbon Anodes Revealed by Heteroatom Doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Zhifei; Bommier, Clement; Chong, Zhi Sen

Hard carbon is the candidate anode material for the commercialization of Na-ion batteries the batteries that by virtue of being constructed from inexpensive and abundant components open the door for massive scale up of battery-based storage of electrical energy. Holding back the development of these batteries is that a complete understanding of the mechanism of Na-ion storage in hard carbon has remained elusive. Although as an amorphous carbon, hard carbon possesses a subtle and complex structure composed of domains of layered rumpled sheets that have local order resembling graphene within each layer but complete disorder along the c-axis between layers.more » Here, we present two key discoveries: first that characteristics of hard carbon s structure can be modified systematically by heteroatom doping, and second, that these changes greatly affect Na-ion storage properties, which reveal the mechanisms for Na storage in hard carbon. Specifically, P, S and B doping was used to engineer the density of local defects in graphenic layers, and to modify the spacing between the layers. While opening the interlayer spacing through P or S doping extends the low-voltage capacity plateau, and increasing the defect concentration with P or B doping high first sodiation capacity is achieved. Furthermore, we observe that the highly defective B-doped hard carbon suffers a tremendous irreversible capacity in the first desodiation cycle. Our combined first principles calculations and experimental studies revealed a new trapping mechanism, showing that the high binding energies between B-doping induced defects and Na-ions are responsible for the irreversible capacity. The understanding generated in this work provides a totally new set of guiding principles for materials engineers working to optimize hard carbon for Na-ion battery applications.« less

Mechanism of Na-Ion Storage in Hard Carbon Anodes Revealed by Heteroatom Doping

DOE PAGES

Li, Zhifei; Bommier, Clement; Chong, Zhi Sen; ...

2017-05-23

Hard carbon is the candidate anode material for the commercialization of Na-ion batteries the batteries that by virtue of being constructed from inexpensive and abundant components open the door for massive scale up of battery-based storage of electrical energy. Holding back the development of these batteries is that a complete understanding of the mechanism of Na-ion storage in hard carbon has remained elusive. Although as an amorphous carbon, hard carbon possesses a subtle and complex structure composed of domains of layered rumpled sheets that have local order resembling graphene within each layer but complete disorder along the c-axis between layers.more » Here, we present two key discoveries: first that characteristics of hard carbon s structure can be modified systematically by heteroatom doping, and second, that these changes greatly affect Na-ion storage properties, which reveal the mechanisms for Na storage in hard carbon. Specifically, P, S and B doping was used to engineer the density of local defects in graphenic layers, and to modify the spacing between the layers. While opening the interlayer spacing through P or S doping extends the low-voltage capacity plateau, and increasing the defect concentration with P or B doping high first sodiation capacity is achieved. Furthermore, we observe that the highly defective B-doped hard carbon suffers a tremendous irreversible capacity in the first desodiation cycle. Our combined first principles calculations and experimental studies revealed a new trapping mechanism, showing that the high binding energies between B-doping induced defects and Na-ions are responsible for the irreversible capacity. The understanding generated in this work provides a totally new set of guiding principles for materials engineers working to optimize hard carbon for Na-ion battery applications.« less

RIE-based Pattern Transfer Using Nanoparticle Arrays as Etch Masks

NASA Astrophysics Data System (ADS)

Hogg, Chip; Majetich, Sara A.; Bain, James A.

2009-03-01

Nanomasking is used to transfer the pattern of a self-assembled array of nanoparticles into an underlying thin film, for potential use as bit-patterned media. We have used this process to investigate the limits of pattern transfer, as a function of gap size in the pattern. Reactive Ion Etching (RIE) is our chosen process, since the gaseous reaction products and high chemical selectivity are ideal features for etching very small gaps. Interstitial surfactant is removed with an O2 plasma, allowing the etchants to penetrate between the particles. Their pattern is transferred into an intermediate SiO2 mask using a CH4-based RIE. This patterned SiO2 layer is finally used as a mask for the MeOH-based RIE which patterns the magnetic film. We present cross-sectional TEM characterization of the etch profiles, as well as magnetic characterization of the film before and after patterning.

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be

Metacontrast masking is processed before grapheme-color synesthesia.

PubMed

Bacon, Michael Patrick; Bridgeman, Bruce; Ramachandran, Vilayanur S

2013-01-01

We investigated the physiological mechanism of grapheme-color synesthesia using metacontrast masking. A metacontrast target is rendered invisible by a mask that is delayed by about 60 ms; the target and mask do not overlap in space or time. Little masking occurs, however, if the target and mask are simultaneous. This effect must be cortical, because it can be obtained dichoptically. To compare the data for synesthetes and controls, we developed a metacontrast design in which nonsynesthete controls showed weaker dichromatic masking (i.e., the target and mask were in different colors) than monochromatic masking. We accomplished this with an equiluminant target, mask, and background for each observer. If synesthetic color affected metacontrast, synesthetes should show monochromatic masking more similar to the weak dichromatic masking among controls, because synesthetes could add their synesthetic color to the monochromatic condition. The target-mask pairs used for each synesthete were graphemes that elicited strong synesthetic colors. We found stronger monochromatic than dichromatic U-shaped metacontrast for both synesthetes and controls, with optimal masking at an asynchrony of 66 ms. The difference in performance between the monochromatic and dichromatic conditions in the synesthetes indicates that synesthesia occurs at a later processing stage than does metacontrast masking.

Temporal masking of multidimensional tactual stimuli

NASA Astrophysics Data System (ADS)

Tan, Hong Z.; Reed, Charlotte M.; Delhorne, Lorraine A.; Durlach, Nathaniel I.; Wan, Natasha

2003-12-01

Experiments were performed to examine the temporal masking properties of multidimensional tactual stimulation patterns delivered to the left index finger. The stimuli consisted of fixed-frequency sinusoidal motions in the kinesthetic (2 or 4 Hz), midfrequency (30 Hz), and cutaneous (300 Hz) frequency ranges. Seven stimuli composed of one, two, or three spectral components were constructed at each of two signal durations (125 or 250 ms). Subjects identified target signals under three different masking paradigms: forward masking, backward masking, and sandwiched masking (in which the target is presented between two maskers). Target identification was studied as a function of interstimulus interval (ISI) in the range 0 to 640 ms. For both signal durations, percent-correct scores increased with ISI for each of the three masking paradigms. Scores with forward and backward masking were similar and significantly higher than scores obtained with sandwiched masking. Analyses of error trials revealed that subjects showed a tendency to respond, more often than chance, with the masker, the composite of the masker and target, or the combination of the target and a component of the masker. The current results are compared to those obtained in previous studies of tactual recognition masking with brief cutaneous spatial patterns. The results are also discussed in terms of estimates of information transfer (IT) and IT rate, are compared to previous studies with multidimensional tactual signals, and are related to research on the development of tactual aids for the deaf.

Mask industry assessment trend analysis: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2010-05-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

An interactive tool for gamut masking

NASA Astrophysics Data System (ADS)

Song, Ying; Lau, Cheryl; Süsstrunk, Sabine

2014-02-01

Artists often want to change the colors of an image to achieve a particular aesthetic goal. For example, they might limit colors to a warm or cool color scheme to create an image with a certain mood or feeling. Gamut masking is a technique that artists use to limit the set of colors they can paint with. They draw a mask over a color wheel and only use the hues within the mask. However, creating the color palette from the mask and applying the colors to the image requires skill. We propose an interactive tool for gamut masking that allows amateur artists to create an image with a desired mood or feeling. Our system extracts a 3D color gamut from the 2D user-drawn mask and maps the image to this gamut. The user can draw a different gamut mask or locally refine the image colors. Our voxel grid gamut representation allows us to represent gamuts of any shape, and our cluster-based image representation allows the user to change colors locally.

Spin-on metal oxide materials with high etch selectivity and wet strippability

NASA Astrophysics Data System (ADS)

Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

2016-03-01

Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

[Recognition of visual objects under forward masking. Effects of cathegorial similarity of test and masking stimuli].

PubMed

Gerasimenko, N Iu; Slavutskaia, A V; Kalinin, S A; Kulikov, M A; Mikhaĭlova, E S

2013-01-01

In 38 healthy subjects accuracy and response time were examined during recognition of two categories of images--animals andnonliving objects--under forward masking. We revealed new data that masking effects depended of categorical similarity of target and masking stimuli. The recognition accuracy was the lowest and the response time was the most slow, when the target and masking stimuli belongs to the same category, that was combined with high dispersion of response times. The revealed effects were more clear in the task of animal recognition in comparison with the recognition of nonliving objects. We supposed that the revealed effects connected with interference between cortical representations of the target and masking stimuli and discussed our results in context of cortical interference and negative priming.

Effectiveness of surgical masks against influenza bioaerosols.

PubMed

Makison Booth, C; Clayton, M; Crook, B; Gawn, J M

2013-05-01

Most surgical masks are not certified for use as respiratory protective devices (RPDs). In the event of an influenza pandemic, logistical and practical implications such as storage and fit testing will restrict the use of RPDs to certain high-risk procedures that are likely to generate large amounts of infectious bioaerosols. Studies have shown that in such circumstances increased numbers of surgical masks are worn, but the protection afforded to the wearer by a surgical mask against infectious aerosols is not well understood. To develop and apply a method for assessing the protection afforded by surgical masks against a bioaerosol challenge. A dummy test head attached to a breathing simulator was used to test the performance of surgical masks against a viral challenge. Several designs of surgical masks commonly used in the UK healthcare sector were evaluated by measuring levels of inert particles and live aerosolised influenza virus in the air, from in front of and behind each mask. Live influenza virus was measurable from the air behind all surgical masks tested. The data indicate that a surgical mask will reduce exposure to aerosolised infectious influenza virus; reductions ranged from 1.1- to 55-fold (average 6-fold), depending on the design of the mask. We describe a workable method to evaluate the protective efficacy of surgical masks and RPDs against a relevant aerosolised biological challenge. The results demonstrated limitations of surgical masks in this context, although they are to some extent protective. Crown Copyright © 2013. Published by Elsevier Ltd. All rights reserved.

Flavored Anesthetic Masks for Inhalational Induction in Children.

PubMed

Gupta, Aakriti; Mathew, Preethy Joseph; Bhardwaj, Neerja

2017-10-01

To evaluate the clinical efficacy of masking the odor of inhalational agents using fruit flavors on the anxiety behavior and compliance of children for inhalational induction. A prospective randomized double blind, placebo controlled study was conducted on 60 unpremedicated children in the age group of 4-12 y. Thirty children received anesthetic masks smeared with a flavor of child's choice while the other 30 children were induced using masks without flavor. Anxiety was assessed using modified Yale Pre-operative Anxiety Scale (mYPAS) in the pre-op room and during inhalational induction. Mask acceptance was graded by Induction Compliance Checklist (ICC). The cost-effectiveness of flavored anesthetic masks was compared to that of commercially available pre-scented masks. The baseline anxiety in the two groups was comparable. The number of children demonstrating high levels of anxiety at anesthetic induction was similar in flavored and non-flavored mask groups (p 0.45). The compliance to mask induction was also equally good (p 0.99). The authors found significant difference in the cost of flavored mask (INR 56.45 per mask) as compared to commercially available pre-scented masks (INR 660 per mask). The authors observed a placebo effect that reduced the pre-op anxiety in the control group which probably made the quality of induction equivalent with flavored and non-flavored masks. Therefore, using a flavored anesthetic mask is cost-effective than using a commercially available pre-scented mask.

Brightness masking is modulated by disparity structure.

PubMed

Pelekanos, Vassilis; Ban, Hiroshi; Welchman, Andrew E

2015-05-01

The luminance contrast at the borders of a surface strongly influences surface's apparent brightness, as demonstrated by a number of classic visual illusions. Such phenomena are compatible with a propagation mechanism believed to spread contrast information from borders to the interior. This process is disrupted by masking, where the perceived brightness of a target is reduced by the brief presentation of a mask (Paradiso & Nakayama, 1991), but the exact visual stage that this happens remains unclear. In the present study, we examined whether brightness masking occurs at a monocular-, or a binocular-level of the visual hierarchy. We used backward masking, whereby a briefly presented target stimulus is disrupted by a mask coming soon afterwards, to show that brightness masking is affected by binocular stages of the visual processing. We manipulated the 3-D configurations (slant direction) of the target and mask and measured the differential disruption that masking causes on brightness estimation. We found that the masking effect was weaker when stimuli had a different slant. We suggest that brightness masking is partly mediated by mid-level neuronal mechanisms, at a stage where binocular disparity edge structure has been extracted. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Oronasal masks require higher levels of positive airway pressure than nasal masks to treat obstructive sleep apnea.

PubMed

Bettinzoli, Michela; Taranto-Montemurro, Luigi; Messineo, Ludovico; Corda, Luciano; Redolfi, Stefania; Ferliga, Mauro; Tantucci, Claudio

2014-12-01

The purpose of this study was to compare the therapeutic pressure determined by an automated CPAP device (AutoCPAP) during the titration period, between nasal and oronasal mask and the residual apnea-hypopnea index (AHI) on a subsequent poligraphy performed with the established therapeutic CPAP. As a retrospective study, 109 subjects with moderate and severe obstructive sleep apnea-hypopnea (apnea-hypopnea index≥15 events/h) were studied. CPAP titration was performed using an auto-titrating device. There was significant difference in the mean pressure delivered with autoCPAP between the group of patients using the nasal mask (mean 10.0 cmH2O±2.0 SD) and the group which used the oronasal mask (mean 11.2 cmH2O±2.1) (p<0.05). Residual apneas were lower when using a nasal mask: average AHI of 2.6±2.5 compared to 4.5±4.0 using an oronasal mask (p<0.05). On multivariate analysis, the only independent predictor of the level of therapeutic pressure of CPAP was the type of mask used (r=0.245, p 0.008). Therapeutic CPAP level for OSAH is higher when administered via oronasal mask, leaving more residual events. These findings suggest that nasal mask should be the first choice for OSAH treatment.

Suitability of E-tongue Sensors to Assess Taste-Masking of Pediatric Liquids by Different Beverages Considering Their Physico-chemical Properties.

PubMed

Immohr, Laura Isabell; Hedfeld, Claas; Lang, Artur; Pein-Hackelbusch, Miriam

2017-02-01

Manipulation of liquid oral drugs by mixing them into foodstuff is a common procedure for taste-masking of OTC pharmaceuticals when administered to children. However, the taste-masking capability of such application media is not systematically evaluated, and recommendations for suitable media are hardly published. In this study, a sensor array of commercially available and self-developed electronic tongue sensors was employed to assess the taste-masking efficiency of eight different beverages (tap water, apple juice, carrot juice, fennel tea, fruit tea, milk, cocoa, and Alete meal to drink) on the OTC pharmaceuticals Ambroxol-ratiopharm®, Cetirizin AL, and Laxoberal® by multivariate data analysis. The Euclidean distances between each pure application medium and its corresponding drug mixture were used as an indicator for the taste-masking efficiency and correlated to the physico-chemical properties of the beverages. Thus, the pH value, the viscosity, as well as the fat and sugar content of the beverages were included, whereas only the viscosity appeared to be insignificant in all cases. The sugar content as well as the fat content and pH value emerged to be a significant variable in taste-masking efficiency for some of the tested drug products. It was shown that the applied electronic tongue sensors were capable to demonstrate the impact of the physico-chemical properties of the application media on their taste-masking capacity regardless of their non-selectivity towards these characteristics.

Shadows alter facial expressions of Noh masks.

PubMed

Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

2013-01-01

A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers' recognition of the emotional expressions. In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa's smile. They also agree with the aesthetic principle of Japanese traditional art "yugen (profound grace and subtlety)", which highly appreciates subtle emotional expressions in the darkness.

Compliant layer chucking surface

DOEpatents

Blaedel, Kenneth L [Dublin, CA; Spence, Paul A [Pleasanton, CA; Thompson, Samuel L [Pleasanton, CA

2004-12-28

A method and apparatus are described wherein a thin layer of complaint material is deposited on the surface of a chuck to mitigate the deformation that an entrapped particle might cause in the part, such as a mask or a wafer, that is clamped to the chuck. The harder particle will embed into the softer layer as the clamping pressure is applied. The material composing the thin layer could be a metal or a polymer for vacuum or electrostatic chucks. It may be deposited in various patterns to affect an interrupted surface, such as that of a "pin" chuck, thereby reducing the probability of entrapping a particle.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No

A novel approach to mask defect inspection

NASA Astrophysics Data System (ADS)

Sagiv, Amir; Shirman, Yuri; Mangan, Shmoolik

2008-10-01

Memory chips, now constituting a major part of semiconductor market, posit a special challenge for inspection, as they are generally produced with the smallest half-pitch available with today's technology. This is true, in particular, to photomasks of advanced memory devices, which are at the forefront of the "low-k1" regime. In this paper we present a novel photomask inspection approach, that is particularly suitable for low-k1 layers of advanced memory chips, owing to their typical dense and periodic structure. The method we present can produce a very strong signal for small mask defects, by suppression of the modulation of the pattern's image. Unlike dark-field detection, however, here a single diffraction order associated with the pattern generates a constant "gray" background image, that is used for signal enhancement. We define the theoretical basis for the new detection technique, and show, both analytically and numerically, that it can easily achieve a detection line past the printability spec, and that in cases it is at least as sensitive as high-resolution based detection. We also demonstrate this claim experimentally on a customer mask, using the platform of Applied Material's newly released Aera2TM mask inspection tool. The high sensitivity demonstrates the important and often overlooked concept that resolution is not synonymous with sensitivity. The novel detection method is advantageous in several other aspects, such as the very simple implementation, the high throughput, and the relatively simple pre- and post-processing algorithms required for signal extraction. These features, and in particular the very high sensitivity, make this novel detection method an attractive inspection option for advanced memory devices.

Are Masking-Based Models of Risk Useful?

PubMed

Gisiner, Robert C

2016-01-01

As our understanding of directly observable effects from anthropogenic sound exposure has improved, concern about "unobservable" effects such as stress and masking have received greater attention. Equal energy models of masking such as power spectrum models have the appeal of simplicity, but do they offer biologically realistic assessments of the risk of masking? Data relevant to masking such as critical ratios, critical bandwidths, temporal resolution, and directional resolution along with what is known about general mammalian antimasking mechanisms all argue for a much more complicated view of masking when making decisions about the risk of masking inherent in a given anthropogenic sound exposure scenario.

The Sensitivity of Coded Mask Telescopes

NASA Technical Reports Server (NTRS)

Skinner, Gerald K.

2008-01-01

Simple formulae are often used to estimate the sensitivity of coded mask X-ray or gamma-ray telescopes, but t,hese are strictly only applicable if a number of basic assumptions are met. Complications arise, for example, if a grid structure is used to support the mask elements, if the detector spatial resolution is not good enough to completely resolve all the detail in the shadow of the mask or if any of a number of other simplifying conditions are not fulfilled. We derive more general expressions for the Poisson-noise-limited sensitivity of astronomical telescopes using the coded mask technique, noting explicitly in what circumstances they are applicable. The emphasis is on using nomenclature and techniques that result in simple and revealing results. Where no convenient expression is available a procedure is given which allows the calculation of the sensitivity. We consider certain aspects of the optimisation of the design of a coded mask telescope and show that when the detector spatial resolution and the mask to detector separation are fixed, the best source location accuracy is obtained when the mask elements are equal in size to the detector pixels.

Classification and printability of EUV mask defects from SEM images

NASA Astrophysics Data System (ADS)

Cho, Wonil; Price, Daniel; Morgan, Paul A.; Rost, Daniel; Satake, Masaki; Tolani, Vikram L.

2017-10-01

Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overcome before bringing EUV Lithography into high volume manufacturing (HVM). One of the greatest obstacles is manufacturing defect-free masks. For pattern defect inspections in the mask-shop, cutting-edge 193nm optical inspection tools have been used so far due to lacking any e-beam mask inspection (EBMI) or EUV actinic pattern inspection (API) tools. The main issue with current 193nm inspection tools is the limited resolution for mask dimensions targeted for EUV patterning. The theoretical resolution limit for 193nm mask inspection tools is about 60nm HP on masks, which means that main feature sizes on EUV masks will be well beyond the practical resolution of 193nm inspection tools. Nevertheless, 193nm inspection tools with various illumination conditions that maximize defect sensitivity and/or main-pattern modulation are being explored for initial EUV defect detection. Due to the generally low signal-to-noise in the 193nm inspection imaging at EUV patterning dimensions, these inspections often result in hundreds and thousands of defects which then need to be accurately reviewed and dispositioned. Manually reviewing each defect is difficult due to poor resolution. In addition, the lack of a reliable aerial dispositioning system makes it very challenging to disposition for printability. In this paper, we present the use of SEM images of EUV masks for higher resolution review and disposition of defects. In this approach, most of the defects detected by the 193nm inspection tools are first imaged on a mask SEM tool. These images together with the corresponding post-OPC design clips are provided to KLA-Tencor's Reticle Decision Center (RDC) platform which provides ADC (Automated Defect Classification) and S2A (SEM

Comparison of the OxyMask and Venturi mask in the delivery of supplemental oxygen: Pilot study in oxygen-dependent patients

PubMed Central

Beecroft, Jaime M; Hanly, Patrick J

2006-01-01

BACKGROUND: The OxyMask (Southmedic Inc, Canada) is a new face mask for oxygen delivery that uses a small ‘diffuser’ to concentrate and direct oxygen toward the mouth and nose. The authors hypothesized that this unique design would enable the OxyMask to deliver oxygen more efficiently than a Venturi mask (Hudson RCI, USA) in patients with chronic hypoxemia. METHODS: Oxygen-dependent patients with chronic, stable respiratory disease were recruited to compare the OxyMask and Venturi mask in a randomized, single-blind, cross-over design. Baseline blood oxygen saturation (SaO2) was established breathing room air, followed in a random order by supplemental oxygen through the OxyMask or Venturi mask. Oxygen delivery was titrated to maintain SaO2 4% to 5% and 8% to 9% above baseline for two separate 30 min periods of stable breathing. Oxygen flow rate, partial pressure of inspired and expired oxygen (PO2) and carbon dioxide (PCO2), minute ventilation, heart rate, nasal and oral breathing, SaO2 and transcutaneous PCO2 were collected continuously. The study was repeated following alterations to the OxyMask design, which improved clearance of carbon dioxide. RESULTS: Thirteen patients, aged 28 to 79 years, were studied initially using the original OxyMask. Oxygen flow rate was lower, inspired PO2 was higher and expired PO2 was lower while using the OxyMask. Minute ventilation and inspired and expired PCO2 were significantly higher while using the OxyMask, whereas transcutaneous PCO2, heart rate and the ratio of nasal to oral breathing did not change significantly throughout the study. Following modification of the OxyMask, 13 additional patients, aged 18 to 79 years, were studied using the same protocol. The modified OxyMask provided a higher inspired PO2 at a lower flow rate, without evidence of carbon dioxide retention. CONCLUSIONS: Oxygen is delivered safely and more efficiently by the OxyMask than by the Venturi mask in stable oxygen-dependent patients. PMID:16896425

Polarization masks: concept and initial assessment

NASA Astrophysics Data System (ADS)

Lam, Michael; Neureuther, Andrew R.

2002-07-01

Polarization from photomasks can be used as a new lever to improve lithographic performance in both binary and phase-shifting masks (PSMs). While PSMs manipulate the phase of light to control the temporal addition of electric field vectors, polarization masks manipulate the vector direction of electric field vectors to control the spatial addition of electric field components. This paper explores the theoretical possibilities of polarization masks, showing that it is possible to use bar structures within openings on the mask itself to polarize incident radiation. Rigorous electromagnetic scattering simulations using TEMPEST and imaging with SPLAT are used to give an initial assessment on the functionality of polarization masks, discussing the polarization quality and throughputs achieved with the masks. Openings between 1/8 and 1/3 of a wavelength provide both a low polarization ratio and good transmission. A final overall throughput of 33% - 40% is achievable, corresponding to a dose hit of 2.5x - 3x.

Shadows Alter Facial Expressions of Noh Masks

PubMed Central

Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

2013-01-01

Background A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers’ recognition of the emotional expressions. Methodology/Principal Findings In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Conclusions/Significance Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa’s smile. They also agree with the aesthetic principle of Japanese traditional art “yugen (profound grace and subtlety)”, which highly appreciates subtle emotional expressions in the darkness. PMID:23940748

Enhancing the Hardness of Sintered SS 17-4PH Using Nitriding Process for Bracket Orthodontic Application

NASA Astrophysics Data System (ADS)

Suharno, B.; Supriadi, S.; Ayuningtyas, S. T.; Widjaya, T.; Baek, E. R.

2018-01-01

Brackets orthodontic create teeth movement by applying force from wire to bracket then transferred to teeth. However, emergence of friction between brackets and wires reduces load for teeth movement towards desired area. In order to overcome these problem, surface treatment like nitriding chosen as a process which could escalate efficiency of transferred force by improving material hardness since hard materials have low friction levels. This work investigated nitriding treatment to form nitride layer which affecting hardness of sintered SS 17-4PH. The nitride layers produced after nitriding process at various temperature i.e. 470°C, 500°C, 530°C with 8hr holding time under 50% NH3 atmosphere. Optical metallography was conducted to compare microstructure of base and surface metal while the increasing of surface hardness then observed using vickers microhardness tester. Hardened surface layer was obtained after gaseous nitriding process because of nitride layer that contains Fe4N, CrN and Fe-αN formed. Hardness layers can achieved value 1051 HV associated with varies thickness from 53 to 119 μm. The presence of a precipitation process occurring in conjunction with nitriding process can lead to a decrease in hardness due to nitrogen content diminishing in solid solution phase. This problem causes weakening of nitrogen expansion in martensite lattice.

21 CFR 868.5570 - Nonrebreathing mask.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask. (a) Identification. A nonrebreathing mask is a device fitting over a patient's face to administer oxygen. It utilizes...

37 CFR 211.3 - Mask work fees.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b) Section...

37 CFR 211.3 - Mask work fees.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b) Section...

Orientation tuning of contrast masking caused by motion streaks.

PubMed

Apthorp, Deborah; Cass, John; Alais, David

2010-08-01

We investigated whether the oriented trails of blur left by fast-moving dots (i.e., "motion streaks") effectively mask grating targets. Using a classic overlay masking paradigm, we varied mask contrast and target orientation to reveal underlying tuning. Fast-moving Gaussian blob arrays elevated thresholds for detection of static gratings, both monoptically and dichoptically. Monoptic masking at high mask (i.e., streak) contrasts is tuned for orientation and exhibits a similar bandwidth to masking functions obtained with grating stimuli (∼30 degrees). Dichoptic masking fails to show reliable orientation-tuned masking, but dichoptic masks at very low contrast produce a narrowly tuned facilitation (∼17 degrees). For iso-oriented streak masks and grating targets, we also explored masking as a function of mask contrast. Interestingly, dichoptic masking shows a classic "dipper"-like TVC function, whereas monoptic masking shows no dip and a steeper "handle". There is a very strong unoriented component to the masking, which we attribute to transiently biased temporal frequency masking. Fourier analysis of "motion streak" images shows interesting differences between dichoptic and monoptic functions and the information in the stimulus. Our data add weight to the growing body of evidence that the oriented blur of motion streaks contributes to the processing of fast motion signals.

The Meaning behind the Mask. [Lesson Plan].

ERIC Educational Resources Information Center

National Endowment for the Humanities (NFAH), Washington, DC.

In this lesson plan, students explore the cultural significance of masks. After exploring the world of African masks and storytelling, they create masks that tell stories of their own. In these six lessons, students first recall contexts in which masks are worn in the United States, and then discuss their use in stories. Students then investigate…

Metacontrast masking and attention do not interact.

PubMed

Agaoglu, Sevda; Breitmeyer, Bruno; Ogmen, Haluk

2016-07-01

Visual masking and attention have been known to control the transfer of information from sensory memory to visual short-term memory. A natural question is whether these processes operate independently or interact. Recent evidence suggests that studies that reported interactions between masking and attention suffered from ceiling and/or floor effects. The objective of the present study was to investigate whether metacontrast masking and attention interact by using an experimental design in which saturation effects are avoided. We asked observers to report the orientation of a target bar randomly selected from a display containing either two or six bars. The mask was a ring that surrounded the target bar. Attentional load was controlled by set-size and masking strength by the stimulus onset asynchrony between the target bar and the mask ring. We investigated interactions between masking and attention by analyzing two different aspects of performance: (i) the mean absolute response errors and (ii) the distribution of signed response errors. Our results show that attention affects observers' performance without interacting with masking. Statistical modeling of response errors suggests that attention and metacontrast masking exert their effects by independently modulating the probability of "guessing" behavior. Implications of our findings for models of attention are discussed.

21 CFR 868.5590 - Scavenging mask.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food... DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification. A scavenging mask is a device positioned over a patient's nose to deliver anesthetic or analgesic gases to the...

21 CFR 868.5600 - Venturi mask.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is a...

Inadequate face mask ventilation--clinical applications.

PubMed

Goranović, Tatjana; Milić, Morena; Holjevac, Jadranka Katancić; Maldini, Branka; Sakić, Katarina

2010-09-01

Face mask ventilation is a life saving technique. This article will review aetiology and patophysiological consequences of inadequate mask ventilation. The main focus will be on circulatory changes during induction of anesthesia, before and in a short period after intubation that could be attributed to inadequate mask ventilation in humans.

Fabrication of coronagraph masks and laboratory scale star-shade masks: characteristics, defects, and performance

NASA Astrophysics Data System (ADS)

Balasubramanian, Kunjithapatham; Riggs, A. J. Eldorado; Cady, Eric; White, Victor; Yee, Karl; Wilson, Daniel; Echternach, Pierre; Muller, Richard; Mejia Prada, Camilo; Seo, Byoung-Joon; Shi, Fang; Ryan, Daniel; Fregoso, Santos; Metzman, Jacob; Wilson, Robert Casey

2017-09-01

NASA WFIRST mission has planned to include a coronagraph instrument to find and characterize exoplanets. Masks are needed to suppress the host star light to better than 10-8 - 10-9 level contrast over a broad bandwidth to enable the coronagraph mission objectives. Such masks for high contrast coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, etc. We present the technologies employed at JPL to produce these pupil plane and image plane coronagraph masks, and lab-scale external occulter masks, highlighting accomplishments from the high contrast imaging testbed (HCIT) at JPL and from the high contrast imaging lab (HCIL) at Princeton University. Inherent systematic and random errors in fabrication and their impact on coronagraph performance are discussed with model predictions and measurements.

Nanolubrication: patterned lubricating films using ultraviolet (UV) irradiation on hard disks.

PubMed

Zhang, J; Hsu, S M; Liew, Y F

2007-01-01

Nanolubrication is emerging to be the key technical barrier in many devices. One of the key attributes for successful device lubrication is self-sustainability using only several molecular layers. For single molecular species lubrication, one desires bonding strength and molecular mobility to repair the contact by diffusing back to the contact. One way to achieve this is the use of mask to shield the surface with a patterned surface texture, put a monolayer on the surface and induce bonding. Then re-deposit mobile molecules on the surface to bring the thickness back to the desired thickness. This paper describes the use of long wavelength UV irradiation (320-390 nm) to induce bonding of a perfluoropolyether (PFPE) on CN(x) disks for magnetic hard disk application. This allows the use of irradiation to control the degree of bonding on CN(x) coatings. The effect of induced bonding based on this wavelength was studied by comparing 100% mobile PFPE, 100% bonded PFPE, and a mixture of mobile and bonded PFPE in a series of laboratory tests. Using a lateral force microscope, a diamond-tipped atomic force microscope, and a ball-on-inclined plane apparatus, the friction and wear characteristics of these three cases were obtained. Results suggested that the mixed PFPE has the highest shear rupture strength.

Fast mask writers: technology options and considerations

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

2011-04-01

The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

NASA Technical Reports Server (NTRS)

Jones, Stephen H.; Lau, Kei May; Pouch, John J.

1988-01-01

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

21 CFR 868.5580 - Oxygen mask.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b) Classification...

21 CFR 868.5580 - Oxygen mask.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b) Classification...

21 CFR 868.5580 - Oxygen mask.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b) Classification...

21 CFR 868.5580 - Oxygen mask.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b) Classification...

21 CFR 868.5580 - Oxygen mask.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b) Classification...

Enhancement in Informational Masking

ERIC Educational Resources Information Center

Cao, Xiang; Richards, Virginia M.

2012-01-01

Purpose: The ability to detect a tone added to a random masker improves when a preview of the masker is provided. In 2 experiments, the authors explored the role that perceptual organization plays in this release from masking. Method: Detection thresholds were measured in informational masking studies. The maskers were drawn at random prior to…

Simulation-based MDP verification for leading-edge masks

NASA Astrophysics Data System (ADS)

Su, Bo; Syrel, Oleg; Pomerantsev, Michael; Hagiwara, Kazuyuki; Pearman, Ryan; Pang, Leo; Fujimara, Aki

2017-07-01

For IC design starts below the 20nm technology node, the assist features on photomasks shrink well below 60nm and the printed patterns of those features on masks written by VSB eBeam writers start to show a large deviation from the mask designs. Traditional geometry-based fracturing starts to show large errors for those small features. As a result, other mask data preparation (MDP) methods have become available and adopted, such as rule-based Mask Process Correction (MPC), model-based MPC and eventually model-based MDP. The new MDP methods may place shot edges slightly differently from target to compensate for mask process effects, so that the final patterns on a mask are much closer to the design (which can be viewed as the ideal mask), especially for those assist features. Such an alteration generally produces better masks that are closer to the intended mask design. Traditional XOR-based MDP verification cannot detect problems caused by eBeam effects. Much like model-based OPC verification which became a necessity for OPC a decade ago, we see the same trend in MDP today. Simulation-based MDP verification solution requires a GPU-accelerated computational geometry engine with simulation capabilities. To have a meaningful simulation-based mask check, a good mask process model is needed. The TrueModel® system is a field tested physical mask model developed by D2S. The GPU-accelerated D2S Computational Design Platform (CDP) is used to run simulation-based mask check, as well as model-based MDP. In addition to simulation-based checks such as mask EPE or dose margin, geometry-based rules are also available to detect quality issues such as slivers or CD splits. Dose margin related hotspots can also be detected by setting a correct detection threshold. In this paper, we will demonstrate GPU-acceleration for geometry processing, and give examples of mask check results and performance data. GPU-acceleration is necessary to make simulation-based mask MDP verification

The impact of reverberant self-masking and overlap-masking effects on speech intelligibility by cochlear implant listeners (L).

PubMed

Kokkinakis, Kostas; Loizou, Philipos C

2011-09-01

The purpose of this study is to determine the relative impact of reverberant self-masking and overlap-masking effects on speech intelligibility by cochlear implant listeners. Sentences were presented in two conditions wherein reverberant consonant segments were replaced with clean consonants, and in another condition wherein reverberant vowel segments were replaced with clean vowels. The underlying assumption is that self-masking effects would dominate in the first condition, whereas overlap-masking effects would dominate in the second condition. Results indicated that the degradation of speech intelligibility in reverberant conditions is caused primarily by self-masking effects that give rise to flattened formant transitions. © 2011 Acoustical Society of America

Modeling and Simulating Multiple Failure Masking enabled by Local Recovery for Stencil-based Applications at Extreme Scales

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gamell, Marc; Teranishi, Keita; Mayo, Jackson

By obtaining multi-process hard failure resilience at the application level is a key challenge that must be overcome before the promise of exascale can be fully realized. Some previous work has shown that online global recovery can dramatically reduce the overhead of failures when compared to the more traditional approach of terminating the job and restarting it from the last stored checkpoint. If online recovery is performed in a local manner further scalability is enabled, not only due to the intrinsic lower costs of recovering locally, but also due to derived effects when using some application types. In this papermore » we model one such effect, namely multiple failure masking, that manifests when running Stencil parallel computations on an environment when failures are recovered locally. First, the delay propagation shape of one or multiple failures recovered locally is modeled to enable several analyses of the probability of different levels of failure masking under certain Stencil application behaviors. These results indicate that failure masking is an extremely desirable effect at scale which manifestation is more evident and beneficial as the machine size or the failure rate increase.« less

Modeling and Simulating Multiple Failure Masking enabled by Local Recovery for Stencil-based Applications at Extreme Scales

DOE PAGES

Gamell, Marc; Teranishi, Keita; Mayo, Jackson; ...

2017-04-24

By obtaining multi-process hard failure resilience at the application level is a key challenge that must be overcome before the promise of exascale can be fully realized. Some previous work has shown that online global recovery can dramatically reduce the overhead of failures when compared to the more traditional approach of terminating the job and restarting it from the last stored checkpoint. If online recovery is performed in a local manner further scalability is enabled, not only due to the intrinsic lower costs of recovering locally, but also due to derived effects when using some application types. In this papermore » we model one such effect, namely multiple failure masking, that manifests when running Stencil parallel computations on an environment when failures are recovered locally. First, the delay propagation shape of one or multiple failures recovered locally is modeled to enable several analyses of the probability of different levels of failure masking under certain Stencil application behaviors. These results indicate that failure masking is an extremely desirable effect at scale which manifestation is more evident and beneficial as the machine size or the failure rate increase.« less

Studying Hardness Meter Spring Strength to Understand Hardness Distribution on Body Surfaces.

PubMed

Arima, Yoshitaka

2017-10-01

For developing a hardness multipoint measurement system for understanding hardness distribution on biological body surfaces, we investigated the spring strength of the contact portion main axis of a biological tissue hardness meter (product name: PEK). We measured the hardness of three-layered sheets of six types of gel sheets (90 mm × 60 mm × 6 mm) constituting the acupuncture practice pads, with PEK measurements of 1.96 N, 2.94 N, 3.92 N, 4.90 N, 5.88 N, 6.86 N, 7.84 N, 8.82 N, and 9.81 N of the main axis spring strength. We obtained measurements 10 times for the gel sheets and simultaneously measured the load using a digital scale. We measured the hardness distribution of induration embedded and breast cancer palpation models, with a main axis with 1.96 N, 4.90 N, and 9.81 N spring strengths, to create a two-dimensional Contour Fill Chart. Using 4.90 N spring strength, we could obtain measurement loads of ≤3.0 N, and the mean hardness was 5.14 mm. This was close to the median of the total measurement range 0.0-10.0 mm, making the measurement range the largest for this spring strength. We could image the induration of the induration-embedded model regardless of the spring strength. Overall, 4.90 N spring strength was best suited for imaging cancer in the breast cancer palpation model. Copyright © 2017. Published by Elsevier B.V.

Reinforced Masks for Ion Plating of Solar Cells

NASA Technical Reports Server (NTRS)

Conley, W. R.; Swick, E. G.; Volkers, J. C.

1987-01-01

Proposed mask for ion plating of surface electrodes on silicon solar cells reinforced to hold shape better during handling. Fabrication process for improved mask similar to conventional mask. Additional cuts and bends made in wide diametral strip to form bridges between pairs of mask fingers facing each other across this strip. Bridges high enough not to act as masks so entire strip area plated.

Mask industry assessment trend analysis: 2012

NASA Astrophysics Data System (ADS)

Chan, Y. David

2012-02-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year's assessment was the tenth in the current series of annual reports. This year's survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

Evaluation of a new pediatric positive airway pressure mask.

PubMed

Kushida, Clete A; Halbower, Ann C; Kryger, Meir H; Pelayo, Rafael; Assalone, Valerie; Cardell, Chia-Yu; Huston, Stephanie; Willes, Leslee; Wimms, Alison J; Mendoza, June

2014-09-15

The choice and variety of pediatric masks for continuous positive airway pressure (CPAP) is limited in the US. Therefore, clinicians often prescribe modified adult masks. Until recently a mask for children aged < 7 years was not available. This study evaluated apnea-hypopnea index (AHI) equivalence and acceptability of a new pediatric CPAP mask for children aged 2-7 years (Pixi; ResMed Ltd, Sydney, Australia). Patients aged 2-7 years were enrolled and underwent in-lab baseline polysomnography (PSG) using their previous mask, then used their previous mask and the VPAP III ST-A flow generator for ≥ 10 nights at home. Thereafter, patients switched to the Pixi mask for ≥ 2 nights before returning for a PSG during PAP therapy via the Pixi mask. Patients then used the Pixi mask at home for ≥ 21 nights. Patients and their parents/guardians returned to the clinic for follow-up and provided feedback on the Pixi mask versus their previous mask. AHI with the Pixi mask was 1.1 ± 1.5/h vs 2.6 ± 5.4/h with the previous mask (p = 0.3538). Parents rated the Pixi mask positively for: restfulness of the child's sleep, trouble in getting the child to sleep, and trouble in having the child stay asleep. The Pixi mask was also rated highly for leaving fewer or no marks on the upper lip and under the child's ears, and being easy to remove. The Pixi mask is suitable for children aged 2-7 years and provides an alternative to other masks available for PAP therapy in this age group. © 2014 American Academy of Sleep Medicine.

Rapid iconic erasure without masking.

PubMed

Tijus, Charles Albert; Reeves, Adam

2004-01-01

We report on the erasure of the iconic memory of an array of 12 black letters flashed on a continuously- present white field. Erasure is accomplished by replacing the 16 ms letter array (frame 1) with a blank white frame for 16 ms (frame 2). The letter array returns in frame 3, with from one to six letters missing. Report of the missing letters is accurate without the blank white frame but is impoverished with it, as if interposing the blank erases the icon. Erasure occurs without any obvious luminance masking, 'mud splashes', pattern masking (backward, forward, or metacontrast), lateral masking, or masking by object substitution. Erasure is greatly decreased if the blank is presented one frame earlier or later. We speculate that erasure is due to a rapid reset of the icon produced by an informational mis-match.

Migration from full‐head mask to “open‐face” mask for immobilization of patients with head and neck cancer

PubMed Central

Lovelock, D. Michael; Mechalakos, James; Rao, Shyam; Della‐Biancia, Cesar; Amols, Howard; Lee, Nancy

2013-01-01

To provide an alternative device for immobilization of the head while easing claustrophobia and improving comfort, an “open‐face” thermoplastic mask was evaluated using video‐based optical surface imaging (OSI) and kilovoltage (kV) X‐ray radiography. A three‐point thermoplastic head mask with a precut opening and reinforced strips was developed. After molding, it provided sufficient visible facial area as the region of interest for OSI. Using real‐time OSI, the head motion of ten volunteers in the new mask was evaluated during mask locking and 15 minutes lying on the treatment couch. Using a nose mark with reference to room lasers, forced head movement in open‐face and full‐head masks (with a nose hole) was compared. Five patients with claustrophobia were immobilized with open‐face masks, set up using OSI and kV, and treated in 121 fractions, in which 61 fractions were monitored during treatment using real‐time OSI. With the open‐face mask, head motion was found to be 1.0 ± 0.6 mm and 0.4° ± 0.2° in volunteers during the experiment, and 0.8 ± 0.3 mm and 0.4° ± 0.2° in patients during treatment. These agree with patient motion calculated from pre‐/post‐treatment OSI and kV data using different anatomical landmarks. In volunteers, the head shift induced by mask‐locking was 2.3 ± 1.7 mm and 1.8° ± 0.6°, and the range of forced movements in the open‐face and full‐head masks were found to be similar. Most (80%) of the volunteers preferred the open‐face mask to the full‐head mask, while claustrophobic patients could only tolerate the open‐face mask. The open‐face mask is characterized for its immobilization capability and can immobilize patients sufficiently (< 2 mm) during radiotherapy. It provides a clinical solution to the immobilization of patients with head and neck (HN) cancer undergoing radiotherapy, and is particularly beneficial for claustrophobic patients. This new open�

The 105-Month Swift-BAT All-Sky Hard X-Ray Survey

NASA Technical Reports Server (NTRS)

Oh, Kyuseok; Koss, Michael; Markwardt, Craig B.; Schawinski, Kevin; Baumgartner, Wayne H.; Barthelmy, Scott D.; Cenko, S. Bradley; Gehrels, Neil; Mushotzky, Richard; Petulante, Abigail;

The 105-Month Swift-BAT All-sky Hard X-Ray Survey

NASA Astrophysics Data System (ADS)

Oh, Kyuseok; Koss, Michael; Markwardt, Craig B.; Schawinski, Kevin; Baumgartner, Wayne H.; Barthelmy, Scott D.; Cenko, S. Bradley; Gehrels, Neil; Mushotzky, Richard; Petulante, Abigail; Ricci, Claudio; Lien, Amy; Trakhtenbrot, Benny

2018-03-01

We present a catalog of hard X-ray sources detected in the first 105 months of observations with the Burst Alert Telescope (BAT) coded-mask imager on board the Swift observatory. The 105-month Swift-BAT survey is a uniform hard X-ray all-sky survey with a sensitivity of 8.40× {10}-12 {erg} {{{s}}}-1 {cm}}-2 over 90% of the sky and 7.24× {10}-12 {erg} {{{s}}}-1 {cm}}-2 over 50% of the sky in the 14–195 keV band. The Swift-BAT 105-month catalog provides 1632 (422 new detections) hard X-ray sources in the 14–195 keV band above the 4.8σ significance level. Adding to the previously known hard X-ray sources, 34% (144/422) of the new detections are identified as Seyfert active galactic nuclei (AGNs) in nearby galaxies (z< 0.2). The majority of the remaining identified sources are X-ray binaries (7%, 31) and blazars/BL Lac objects (10%, 43). As part of this new edition of the Swift-BAT catalog, we release eight-channel spectra and monthly sampled light curves for each object in the online journal and at the Swift-BAT 105-month website.

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

NASA Astrophysics Data System (ADS)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Self-masking: Listening during vocalization. Normal hearing.

PubMed

Borg, Erik; Bergkvist, Christina; Gustafsson, Dan

2009-06-01

What underlying mechanisms are involved in the ability to talk and listen simultaneously and what role does self-masking play under conditions of hearing impairment? The purpose of the present series of studies is to describe a technique for assessment of masked thresholds during vocalization, to describe normative data for males and females, and to focus on hearing impairment. The masking effect of vocalized [a:] on narrow-band noise pulses (250-8000 Hz) was studied using the maximum vocalization method. An amplitude-modulated series of sound pulses, which sounded like a steam engine, was masked until the criterion of halving the perceived pulse rate was reached. For masking of continuous reading, a just-follow-conversation criterion was applied. Intra-session test-retest reproducibility and inter-session variability were calculated. The results showed that female voices were more efficient in masking high frequency noise bursts than male voices and more efficient in masking both a male and a female test reading. The male had to vocalize 4 dBA louder than the female to produce the same masking effect on the test reading. It is concluded that the method is relatively simple to apply and has small intra-session and fair inter-session variability. Interesting gender differences were observed.

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

NASA Astrophysics Data System (ADS)

Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

2008-03-01

Boundary Layer representation of the EMF behavior of a mask blank to intensity measurements of the mask diffraction patterns by an Aerial Image Measurement System (AIMS) with polarized illumination. We also discuss how this model can become a powerful tool for the assessment of the impact to the lithographic process of a mask blank.

Does technology acceleration equate to mask cost acceleration?

NASA Astrophysics Data System (ADS)

Trybula, Walter J.; Grenon, Brian J.

2003-06-01

The technology acceleration of the ITRS Roadmap has many implications on both the semiconductor sup-plier community and the manufacturers. INTERNATIONAL SEMATECH has revaluated the projected cost of advanced technology masks. Building on the methodology developed in 1996 for mask costs, this work provided a critical review of mask yields and factors relating to the manufacture of photolithography masks. The impact of the yields provided insight into the learning curve for leading edge mask manufac-turing. The projected mask set cost was surprising, and the ability to provide first and second year cost estimates provided additional information on technology introduction. From this information, the impact of technology acceleration can be added to the projected yields to evaluate the impact on mask costs.

Masks For Deposition Of Aspherical Optical Surfaces

NASA Technical Reports Server (NTRS)

Rogers, John R.; Martin, John D.

1992-01-01

Masks of improved design developed for use in fabrication of aspherical, rotationally symmetrical surfaces of mirrors, lenses, and lens molds by evaporative deposition onto rotating substrates. In deposition chamber, source and mask aligned with axis of rotation of substrate. Mask shadows source of rotating substrate. Azimuthal opening (as function of radius) in mask proportional to desired thickness (as function of radius) to which material deposited on substrate. Combination of improved masks and modern coating chambers provides optical surfaces comparable or superior to those produced by conventional polishing, computer-controlled polishing, replication from polished molds, and diamond turning, at less cost in material, labor, and capital expense.

Removable pellicle for lithographic mask protection and handling

DOEpatents

Klebanoff, Leonard E.; Rader, Daniel J.; Hector, Scott D.; Nguyen, Khanh B.; Stulen, Richard H.

2002-01-01

A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.

Masked response priming in expert typists.

PubMed

Heinemann, Alexander; Kiesel, Andrea; Pohl, Carsten; Kunde, Wilfried

2010-03-01

In masked priming tasks responses are usually faster when prime and target require identical rather than different responses. Previous research has extensively manipulated the nature and number of response-affording stimuli. However, little is known about the constraints of masked priming regarding the nature and number of response alternatives. The present study explored the limits of masked priming in a six-choice reaction time task, where responses from different fingers of both hands were required. We studied participants that were either experts for the type of response (skilled typists) or novices. Masked primes facilitated responding to targets that required the same response, responses with a different finger of the same hand, and with a homologous finger of the other hand. These effects were modulated by expertise. The results show that masked primes facilitate responding especially for experts in the S-R mapping and with increasing similarity of primed and required response.

Reticle writer for next-generation SEMI mask standard: mask handling and exposure

NASA Astrophysics Data System (ADS)

Ehrlich, Christian

1998-12-01

The world semiconductor industry is currently preparing itself for the next evolutionary step in the ongoing development of the integrated circuit, characterized by the 0.18 to 0.15 micrometer technology. The already complex engineering task for the mask tool makers is furthermore complicated by the introduction of the new SEMI reticle standard with a 230 mm by 230 mm large and 9 mm thick quartz glass blank that will have a weight of more than one kilogram. The production of these advanced masks is already identified as a key enabling technology which will stretch the capabilities of the manufacturing process, and its equipment, to the limit. The mask making e-beam system Leica ZBA320, capable of exposing a 230 mm reticle and featuring the variable shaped beam approach with a 20 kV accelerating voltage has been introduced recently. Now the first results of e-beam exposures with this new type of mask writer are presented. Enhancements form the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. This system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 180 nanometer design rules, and beyond, with high accuracy and productivity.

Comodulation masking release in an off-frequency masking paradigm.

PubMed

Grzeschik, Ramona; Lübken, Björn; Verhey, Jesko L

2015-08-01

Detection threshold of a sinusoidal signal masked by a broadband masker is lower when on- and off-frequency masker components have a correlated envelope, compared to a condition in which these masker components have different envelopes. This effect is commonly referred to as comodulation masking release (CMR). The present study investigated if there is a CMR in the absence of a masker component at the signal frequency, i.e., in an off-frequency masking paradigm. Thresholds were measured for a 500-Hz signal in the presence of a broadband masker with a spectral notch at the signal frequency. Thresholds were significantly lower for a (co-)modulated than for an unmodulated masker for all notch widths up to 400 Hz. An additional experiment showed that the particularly large CMR for the no-notch condition was due to the way the modulated masker was generated. No CMR was measured when the notched-noise masker was replaced by a pair of narrowband noises. The addition of more remote masker bands resulted in a CMR of about 3-4 dB. The notched-noise data were predicted on the basis of a modulation-filterbank model. The predictions of the narrowband noise conditions indicated that all mechanisms underlying CMR might still not be fully understood.

Jig Aligns Shadow Mask On CCD

NASA Technical Reports Server (NTRS)

Matus, Carlos V.

1989-01-01

Alignment viewed through microscope. Alignment jig positions shadow mask on charge-coupled device (CCD) so metal film deposited on it precisely. Allows CCD package to be inserted and removed without disturbing alignment of mask. Holds CCD packages securely and isolates it electrostatically while providing electrical contact to each of its pins. When alignment jig assembled with CCD, used to move mask under micrometer control.

Masked Hypertension is Associated With Cognitive Decline in Geriatric Age-Geriatric MASked Hypertension and Cognition (G-MASH-cog) Study.

PubMed

Esme, Mert; Yavuz, Burcu Balam; Yavuz, Bunyamin; Asil, Serkan; Tuna Dogrul, Rana; Sumer, Fatih; Kilic, Mustafa Kemal; Kizilarslanoglu, Muhammet Cemal; Varan, Hacer Dogan; Sagir, Aykut; Balci, Cafer; Halil, Meltem; Cankurtaran, Mustafa

2018-01-16

Masked hypertension is described as high ambulatory blood pressure measurements (ABPM) where office blood pressure measurements are normal. Effect of hypertension on cognitive functions is well known. However, the effect of masked hypertension on cognitive functions is unclear. The aim of this study is to examine the relationship between masked hypertension and cognitive functions. One hundred-two normotensive patients admitted to the Geriatric Medicine outpatient clinic were included. Exclusion criteria were hypertension, dementia, major depression, and usage of antihypertensive medication. All patients underwent ABPM procedures and average daytime blood pressure, mean blood pressure at night and the 24-hour average blood pressure measurements were recorded. Comprehensive geriatric assessment tests and neuropsychological tests were administered. The diagnosis of masked hypertension was based on the definitions in the 2013 guideline of the European Society of Cardiology. Forty-four patients (43%) were diagnosed with masked hypertension. Patients with masked hypertension had significantly lower scores on Mini-Mental State Examination (MMSE) test, Quick Mild Cognitive Impairment Test (QMCI), and Categorical Fluency Test than the normotensive patients (p = .011; p = .046; and p = .004; respectively). Montreal Cognitive Assessment Scale test score was lower in masked hypertension, although this was not statistically significant. This study may indicate that geriatric patients with masked hypertension, compared to normotensive patients have decreased cognitive functions. Masked hypertension should be kept in mind while assessing older adults. When masked hypertension is detected, cognitive assessment is essential to diagnose possible cognitive dysfunction at early stage. © The Author 2017. Published by Oxford University Press on behalf of The Gerontological Society of America. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Assessment of molecular contamination in mask pod

NASA Astrophysics Data System (ADS)

Foray, Jean Marie; Dejaune, Patrice; Sergent, Pierre; Gough, Stuart; Cheung, D.; Davenet, Magali; Favre, Arnaud; Rude, C.; Trautmann, T.; Tissier, Michel; Fontaine, H.; Veillerot, M.; Avary, K.; Hollein, I.; Lerit, R.

2008-04-01

Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essential to measure, to understand and then try to reduce AMC in mask environment. Mask material flow was studied in a global approach by a pool of European partners, especially within the frame of European MEDEA+ project, so called "MUSCLE". This paper deals with results and assessment of mask pod environment in term of molecular contamination in a first step, then in a second step preliminary studies to reduce mask pod influence and contamination due to material out gassing. Approach and techniques: A specific assessment of environmental / molecular contamination along the supply chain was performed by all partners. After previous work presented at EMLC 07, further studies were performed on real time contamination measurement pod at different sites locations (including Mask manufacturing site, blank manufacturing sites, IC fab). Studies were linked to the main critical issues: cleaning, storage, handling, materials and processes. Contamination measurement campaigns were carried out along the mask supply chain using specific Adixen analyzer in order to monitor in real time organic contaminants (ppb level) in mask pods. Key results would be presented: VOC, AMC and humidity level on different kinds of mask carriers, impact of basic cleaning on pod outgassing measurement (VOC, NH3), and process influence on pod contamination... In a second step, preliminary specific pod conditioning studies for better pod environment were performed based on Adixen vacuum process. Process influence had been experimentally measured in term of molecular outgassing from mask pods. Different AMC experimental characterization methods had been carried out leading to results on a wide range of organic and inorganic

Evaluation of a New Pediatric Positive Airway Pressure Mask

PubMed Central

Kushida, Clete A.; Halbower, Ann C.; Kryger, Meir H.; Pelayo, Rafael; Assalone, Valerie; Cardell, Chia-Yu; Huston, Stephanie; Willes, Leslee; Wimms, Alison J.; Mendoza, June

2014-01-01

Study Objectives: The choice and variety of pediatric masks for continuous positive airway pressure (CPAP) is limited in the US. Therefore, clinicians often prescribe modified adult masks. Until recently a mask for children aged < 7 years was not available. This study evaluated apnea-hypopnea index (AHI) equivalence and acceptability of a new pediatric CPAP mask for children aged 2-7 years (Pixi; ResMed Ltd, Sydney, Australia). Methods: Patients aged 2-7 years were enrolled and underwent in-lab baseline polysomnography (PSG) using their previous mask, then used their previous mask and the VPAP III ST-A flow generator for ≥ 10 nights at home. Thereafter, patients switched to the Pixi mask for ≥ 2 nights before returning for a PSG during PAP therapy via the Pixi mask. Patients then used the Pixi mask at home for ≥ 21 nights. Patients and their parents/guardians returned to the clinic for follow-up and provided feedback on the Pixi mask versus their previous mask. Results: AHI with the Pixi mask was 1.1 ± 1.5/h vs 2.6 ± 5.4/h with the previous mask (p = 0.3538). Parents rated the Pixi mask positively for: restfulness of the child's sleep, trouble in getting the child to sleep, and trouble in having the child stay asleep. The Pixi mask was also rated highly for leaving fewer or no marks on the upper lip and under the child's ears, and being easy to remove. Conclusions: The Pixi mask is suitable for children aged 2-7 years and provides an alternative to other masks available for PAP therapy in this age group. Citation: Kushida CA, Halbower AC, Kryger MH, Pelayo R, Assalone V, Cardell CY, Huston S, Willes L, Wimms AJ, Mendoza J. Evaluation of a new pediatric positive airway pressure mask. J Clin Sleep Med 2014;10(9):979-984. PMID:25142768

Steady Shear Viscosities of Two Hard Sphere Colloidal Dispersions

NASA Astrophysics Data System (ADS)

Cheng, Zhengdong; Chaikin, Paul M.; Phan, See-Eng; Russel, William B.; Zhu, Jixiang

1996-03-01

Though hard spheres have the simplest inter-particle potential, the many body hydrodynamic interactions are complex and the rheological properties of dispersions are not fully understood in the concentrated regime. We studied two model systems: colloidal poly-(Methyl Methacrylate) spheres with a grafted layer of poly-(12-hydroxy stearic acid) (PMMA/PHSA) and spherical Silica particles (PST-5, Nissan Chemical Industries, Ltd, Tokyo, Japan). Steady shear viscosities were measured by a Zimm viscometer. The high shear relative viscosity of the dispersions compares well with other hard sphere systems, but the low shear relative viscosity of PMMA/PHSA dispersions is η / η 0 = 50 at φ = 0.5 , higher than η / η 0 = 22 for other hard sphere systems, consistent with recently published data (Phys. Rev. Lett. 75(1995)958). Bare Silica spheres are used to clarify the effect of the grafted layer. With the silica spheres, volume fraction can be determined independent of intrinsic viscosity measurements; also, higher concentrated dispersions can be made.

SU-8 negative photoresist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Bogdanov, Alexei L.

2000-06-01

The requirements for better control, linearity, and uniformity of critical dimension (CD) on photomasks in fabrication of 180 and 150 nm generation devices result in increasing demand for thinner, more etching durable, and more sensitive e-beam resists. Novolac based resists with chemical amplification have been a choice for their sensitivity and stability during etching. However, difficult CD control due to the acid catalyzer diffusion and quite narrow post exposure bake (PEB) process window are some of the major drawbacks of these resists. SU-8 is recently introduced to the market negative photoresist. High sensitivity, fairly good adhesion properties, and relatively simple processing of SU-8 make it a good substitution for novolac based chemically amplified negative e-beam resists in optical mask manufacturing. The replacement of traditional chemically amplified resists by SU- 8 can increase the process latitude and reduce resist costs. Among the obvious drawbacks of SU-8 are the use of solvent- based developer and demand of oxygen plasma for resist removal. In this paper the use of SU-8 for optical mask manufacturing is reported. All steps of resist film preparation, exposure and development are paid a share of attention. Possibilities to use reactive ion etching (RIE) with oxygen in order to increase resist mask contrast are discussed. Special exposure strategy (pattern outlining) was employed to further improve the edge definition. The resist PEB temperature and time were studied to estimate their weight in overall CD control performance. Specially designed test patterns with 0.25 micrometer design rule could be firmly transferred into a chromium layer both by wet etching and ion milling. Influence of exposure dose variation on the pattern CD change was studied.

The magic of 4X mask reduction

NASA Astrophysics Data System (ADS)

Lercel, Michael

2006-06-01

Although changing the mask reduction factor from 4X to a larger value offers several technical advantages, previous attempts to enact this change have not identified enough clear technical advantages to overcome the impact to productivity. Improvements in mask manufacturing, mask polarization effects, and optics cost have not been thought to be sufficient reason to accept a reduced throughput and field size. This paper summarizes the latest workshop and discussion revisiting the mask reduction factor for 32nm half-pitch lithography with hyper-numerical aperture (NA) optical or extreme ultraviolet lithography (EUVL). The workshop consensus was strongly in favor of maintaining the current magnification ratio and field size as long as mask costs can be contained.

Viscoelastic responses of a hard transition zone - Effects on postglacial uplifts and rotational signatures

NASA Technical Reports Server (NTRS)

Spada, Giorgio; Sabadini, Roberto; Yuen, David A.

1991-01-01

A five-layer viscoelastic spherical model is used to calculate the transient displacements of postglacial rebound, the induced polar motions, and the temporal variations of the geopotential up to degree 8 of the zonal coefficients. Two models - one with two viscoelastic layers separated at 670 km, and the other with three layers in which a hard garnet layer lies between the upper and lower mantle - are compared. Forward modeling shows that it may be possible to discern the presence of a hard garnet layer with a viscosity of at least ten times greater than the upper mantle, on the basis of uplift data near the center of the former Laurentide ice-sheet and from polar wander and j2 data. Temporal variations of higher gravity harmonics, such as j6 and j8, can potentially place even tighter constraints on the rheological properties of the hard transition zone. A lower mantle viscosity between 2 and 4 x 10 to the 22nd Pa is generally preferred in models with a garnet layer which may be as large as 50 times more viscous than the upper mantle.

Ipsilateral masking between acoustic and electric stimulations.

PubMed

Lin, Payton; Turner, Christopher W; Gantz, Bruce J; Djalilian, Hamid R; Zeng, Fan-Gang

2011-08-01

Residual acoustic hearing can be preserved in the same ear following cochlear implantation with minimally traumatic surgical techniques and short-electrode arrays. The combined electric-acoustic stimulation significantly improves cochlear implant performance, particularly speech recognition in noise. The present study measures simultaneous masking by electric pulses on acoustic pure tones, or vice versa, to investigate electric-acoustic interactions and their underlying psychophysical mechanisms. Six subjects, with acoustic hearing preserved at low frequencies in their implanted ear, participated in the study. One subject had a fully inserted 24 mm Nucleus Freedom array and five subjects had Iowa/Nucleus hybrid implants that were only 10 mm in length. Electric masking data of the long-electrode subject showed that stimulation from the most apical electrodes produced threshold elevations over 10 dB for 500, 625, and 750 Hz probe tones, but no elevation for 125 and 250 Hz tones. On the contrary, electric stimulation did not produce any electric masking in the short-electrode subjects. In the acoustic masking experiment, 125-750 Hz pure tones were used to acoustically mask electric stimulation. The acoustic masking results showed that, independent of pure tone frequency, both long- and short-electrode subjects showed threshold elevations at apical and basal electrodes. The present results can be interpreted in terms of underlying physiological mechanisms related to either place-dependent peripheral masking or place-independent central masking.

Masking reduces orientation selectivity in rat visual cortex

PubMed Central

Alwis, Dasuni S.; Richards, Katrina L.

2016-01-01

In visual masking the perception of a target stimulus is impaired by a preceding (forward) or succeeding (backward) mask stimulus. The illusion is of interest because it allows uncoupling of the physical stimulus, its neuronal representation, and its perception. To understand the neuronal correlates of masking, we examined how masks affected the neuronal responses to oriented target stimuli in the primary visual cortex (V1) of anesthetized rats (n = 37). Target stimuli were circular gratings with 12 orientations; mask stimuli were plaids created as a binarized sum of all possible target orientations. Spatially, masks were presented either overlapping or surrounding the target. Temporally, targets and masks were presented for 33 ms, but the stimulus onset asynchrony (SOA) of their relative appearance was varied. For the first time, we examine how spatially overlapping and center-surround masking affect orientation discriminability (rather than visibility) in V1. Regardless of the spatial or temporal arrangement of stimuli, the greatest reductions in firing rate and orientation selectivity occurred for the shortest SOAs. Interestingly, analyses conducted separately for transient and sustained target response components showed that changes in orientation selectivity do not always coincide with changes in firing rate. Given the near-instantaneous reductions observed in orientation selectivity even when target and mask do not spatially overlap, we suggest that monotonic visual masking is explained by a combination of neural integration and lateral inhibition. PMID:27535373

Evaluation of a native vegetation masking technique

NASA Technical Reports Server (NTRS)

Kinsler, M. C.

1984-01-01

A crop masking technique based on Ashburn's vegetative index (AVI) was used to evaluate native vegetation as an indicator of crop moisture condition. A mask of the range areas (native vegetation) was generated for each of thirteen Great Plains LANDSAT MSS sample segments. These masks were compared to the digitized ground truth and accuracies were computed. An analysis of the types of errors indicates a consistency in errors among the segments. The mask represents a simple quick-look technique for evaluating vegetative cover.

Inverse lithography using sparse mask representations

NASA Astrophysics Data System (ADS)

Ionescu, Radu C.; Hurley, Paul; Apostol, Stefan

2015-03-01

We present a novel optimisation algorithm for inverse lithography, based on optimization of the mask derivative, a domain inherently sparse, and for rectilinear polygons, invertible. The method is first developed assuming a point light source, and then extended to general incoherent sources. What results is a fast algorithm, producing manufacturable masks (the search space is constrained to rectilinear polygons), and flexible (specific constraints such as minimal line widths can be imposed). One inherent trick is to treat polygons as continuous entities, thus making aerial image calculation extremely fast and accurate. Requirements for mask manufacturability can be integrated in the optimization without too much added complexity. We also explain how to extend the scheme for phase-changing mask optimization.

Is masked priming modulated by memory load? A test of the automaticity of masked identity priming in lexical decision.

PubMed

Perea, Manuel; Marcet, Ana; Lozano, Mario; Gomez, Pablo

2018-05-29

One of the key assumptions of the masked priming lexical decision task (LDT) is that primes are processed without requiring attentional resources. Here, we tested this assumption by presenting a dual-task manipulation to increase memory load and measure the change in masked identity priming on the targets in the LDT. If masked priming does not require attentional resources, increased memory load should have no influence on the magnitude of the observed identity priming effects. We conducted two LDT experiments, using a within-subjects design, to investigate the effect of memory load (via a concurrent matching task Experiment 1 and a concurrent search task in Experiment 2) on masked identity priming. Results showed that the magnitude of masked identity priming on word targets was remarkably similar under high and low memory load. Thus, these experiments provide empirical evidence for the automaticity assumption of masked identity priming in the LDT.

Cost-effective masks for deep x-ray lithography

NASA Astrophysics Data System (ADS)

Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost

2003-04-01

The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.

Effect of Masked Regions on Weak-lensing Statistics

NASA Astrophysics Data System (ADS)

Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi

2013-09-01

Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation. We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple χ2 analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg2 survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting χ2/n dof = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard ΛCDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.

EFFECT OF MASKED REGIONS ON WEAK-LENSING STATISTICS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi, E-mail: masato.shirasaki@utap.phys.s.u-tokyo.ac.jp

2013-09-10

Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation.more » We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple {chi}{sup 2} analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg{sup 2} survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting {chi}{sup 2}/n{sub dof} = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard {Lambda}CDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.« less

Study of data I/O performance on distributed disk system in mask data preparation

NASA Astrophysics Data System (ADS)

Ohara, Shuichiro; Odaira, Hiroyuki; Chikanaga, Tomoyuki; Hamaji, Masakazu; Yoshioka, Yasuharu

2010-09-01

Data volume is getting larger every day in Mask Data Preparation (MDP). In the meantime, faster data handling is always required. MDP flow typically introduces Distributed Processing (DP) system to realize the demand because using hundreds of CPU is a reasonable solution. However, even if the number of CPU were increased, the throughput might be saturated because hard disk I/O and network speeds could be bottlenecks. So, MDP needs to invest a lot of money to not only hundreds of CPU but also storage and a network device which make the throughput faster. NCS would like to introduce new distributed processing system which is called "NDE". NDE could be a distributed disk system which makes the throughput faster without investing a lot of money because it is designed to use multiple conventional hard drives appropriately over network. NCS studies I/O performance with OASIS® data format on NDE which contributes to realize the high throughput in this paper.

Mask technology for EUV lithography

NASA Astrophysics Data System (ADS)

Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

1999-04-01

Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

Hard and flexible optical printed circuit board

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, Hyun Sik; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.

2007-02-01

We report on the design and fabrication of hard and flexible optical printed circuit boards (O-PCBs). The objective is to realize generic and application-specific O-PCBs, either in hard form or flexible form, that are compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly, for low-cost and high-volume universal applications. The O-PCBs consist of 2-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate micro/nano-scale photonic devices. The micro/nano-optical functional devices include lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices. For flexible boards, the optical waveguide arrays are fabricated on flexible poly-ethylen terephthalate (PET) substrates by UV embossing. Electrical layer carrying VCSEL and PD array is laminated with the optical layer carrying waveguide arrays. Both hard and flexible electrical lines are replaced with high speed optical interconnection between chips over four waveguide channels up to 10Gbps on each. We discuss uses of hard or flexible O-PCBs for telecommunication systems, computer systems, transportation systems, space/avionic systems, and bio-sensor systems.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer

Homophone Dominance Modulates the Phonemic-Masking Effect.

ERIC Educational Resources Information Center

Berent, Iris; Van Orden, Guy C.

2000-01-01

Finds (1) positive phonemic-masking effects occurred for dominant homophones; (2) null phonemic-masking effects occurred for subordinate homophones; and (3) subordinate homophones were much more likely to be falsely identified as their dominant mate. Suggests the source of these null phonemic-masking is itself a phonology effect. Concludes…

The total face mask is more comfortable than the oronasal mask in noninvasive ventilation but is not associated with improved outcome.

PubMed

Chacur, Fernando Hauaji; Vilella Felipe, Luis Marcelo; Fernandes, Cintia Gonçalves; Lazzarini, Luiz Claudio Oliveira

2011-01-01

Noninvasive positive-pressure ventilation (NPPV) is commonly used to improve ventilation and oxygenation and avoid endotracheal intubation and mechanical ventilation. Although clinically indicated, most patients fail to use NPPV due to mask intolerance. A total face mask was designed to increase compliance, but whether this translates into better outcome (improvement in clinical and blood gas parameters and less intubation) is unknown. We compared the evolution of the clinical parameters, blood gases, levels of ventilatory support and rate of endotracheal intubation using the total face mask or the traditional oronasal mask during NPPV. A total of 60 patients were randomized to use either mask during NPPV. The clinical and laboratory parameters, as well as the level of ventilatory support were recorded at different intervals in both groups for up to 6 h. In addition, the tolerance for each mask and the need for endotracheal intubation were compared. Patients tolerated the total face mask significantly better (p = 0.0010) and used NPPV for a longer time (p = 0.0017) when compared with the oronasal mask. Just 1 patient switched to the total face mask because of intolerance. Although better tolerated, the rate of endotracheal intubation was similar in both groups (p = 0.4376), as was the clinical and laboratory evolution. The total face mask was more comfortable, allowing the patients to tolerate NPPV longer; however, these accomplishments did not translate into a better outcome. Due to its comfort, the total face mask should be available, at least as an option, in units where NPPVs are routinely applied. Copyright © 2011 S. Karger AG, Basel.

21 CFR 868.5560 - Gas mask head strap.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Gas mask head strap. 868.5560 Section 868.5560...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5560 Gas mask head strap. (a) Identification. A gas mask head strap is a device used to hold an anesthetic gas mask in position on a patient's...

How color, regularity, and good Gestalt determine backward masking.

PubMed

Sayim, Bilge; Manassi, Mauro; Herzog, Michael

2014-06-18

The strength of visual backward masking depends on the stimulus onset asynchrony (SOA) between target and mask. Recently, it was shown that the conjoint spatial layout of target and mask is as crucial as SOA. Particularly, masking strength depends on whether target and mask group with each other. The same is true in crowding where the global spatial layout of the flankers and target-flanker grouping determine crowding strength. Here, we presented a vernier target followed by different flanker configurations at varying SOAs. Similar to crowding, masking of a red vernier target was strongly reduced for arrays of 10 green compared with 10 red flanking lines. Unlike crowding, single green lines flanking the red vernier showed strong masking. Irregularly arranged flanking lines yielded stronger masking than did regularly arranged lines, again similar to crowding. While cuboid flankers reduced crowding compared with single lines, this was not the case in masking. We propose that, first, masking is reduced when the flankers are part of a larger spatial structure. Second, spatial factors counteract color differences between the target and the flankers. Third, complex Gestalts, such as cuboids, seem to need longer processing times to show ungrouping effects as observed in crowding. Strong parallels between masking and crowding suggest similar underlying mechanism; however, temporal factors in masking additionally modulate performance, acting as an additional grouping cue. © 2014 ARVO.

Combining Simultaneous with Temporal Masking

ERIC Educational Resources Information Center

Hermens, Frouke; Herzog, Michael H.; Francis, Gregory

2009-01-01

Simultaneous and temporal masking are two frequently used techniques in psychology and vision science. Although there are many studies and theories related to each masking technique, there are no systematic investigations of their mutual relationship, even though both techniques are often applied together. Here, the authors show that temporal…

Masking ability of bi- and tri- laminate all-ceramic veneers on tooth-colored ceramic discs.

PubMed

Farhan, Daniel; Sukumar, Smitha; von Stein-Lausnitz, Axel; Aarabi, Ghazal; Alawneh, Ahmad; Reissmann, Daniel R

2014-01-01

A predictable esthetic outcome is imperative when placing ceramic veneers. Discolored teeth pose a major challenge as sufficient material thickness is required to achieve a good esthetic result. There is limited evidence in the literature that compares the masking ability of multi-laminate veneers. The aim of this in-vitro study was to compare the masking ability of bi-laminate (BL) and tri-laminate (TL) all-ceramic veneers cemented on tooth-colored ceramic discs. A total of 40 veneers (shade A1, 10-mm diameter, 0.8-mm thick) were manufactured-20 BL veneers (0.4-mm pressable ceramic coping veneered with 0.4-mm thick enamel layer) and 20 TL veneers (0.4-mm coping veneered with 0.2-mm thick opaque interlayer and 0.2-mm thick enamel layer). A bonding apparatus was utilized to adhesively cement all veneers on the ceramic discs (shade A1), simulating teeth of light and dark color. The resulting groups (N = 10 each) were the reference groups (shade A1 ceramic base) BL-1 and TL-1 veneers, and the test groups (shade A4 ceramic base) BL-4 and TL-4 veneers. The color of the cemented veneers was measured using a spectrophotometer. The data were converted to CIE L*a*b* coordinates, and ΔE* were calculated to allow for statistical analysis. The color differences between the samples with the A1 and A4 ceramic bases were significantly lower when covered with TL veneers (mean ΔE*: 3.2 units) than with BL veneers (mean ΔE*: 4.0 units: p < 0.001), indicating a better masking ability of the TL veneers. The 0.8-mm thick TL veneer was able to mask darker tooth-colored ceramic disc within clinically acceptable limits. Increased understanding of the masking ability of ceramics and of color science is necessary in these esthetically aware times. Providing tri-laminate veneers for darker colored teeth seems to result in more predictable esthetical results than when using bi-laminate veneers. Patients with discolored/darker teeth may benefit from a more predictable esthetic

Masked mycotoxins: A review

PubMed Central

Berthiller, Franz; Crews, Colin; Dall'Asta, Chiara; Saeger, Sarah De; Haesaert, Geert; Karlovsky, Petr; Oswald, Isabelle P; Seefelder, Walburga; Speijers, Gerrit; Stroka, Joerg

2013-01-01

The aim of this review is to give a comprehensive overview of the current knowledge on plant metabolites of mycotoxins, also called masked mycotoxins. Mycotoxins are secondary fungal metabolites, toxic to human and animals. Toxigenic fungi often grow on edible plants, thus contaminating food and feed. Plants, as living organisms, can alter the chemical structure of mycotoxins as part of their defence against xenobiotics. The extractable conjugated or non-extractable bound mycotoxins formed remain present in the plant tissue but are currently neither routinely screened for in food nor regulated by legislation, thus they may be considered masked. Fusarium mycotoxins (deoxynivalenol, zearalenone, fumonisins, nivalenol, fusarenon-X, T-2 toxin, HT-2 toxin, fusaric acid) are prone to metabolisation or binding by plants, but transformation of other mycotoxins by plants (ochratoxin A, patulin, destruxins) has also been described. Toxicological data are scarce, but several studies highlight the potential threat to consumer safety from these substances. In particular, the possible hydrolysis of masked mycotoxins back to their toxic parents during mammalian digestion raises concerns. Dedicated chapters of this article address plant metabolism as well as the occurrence of masked mycotoxins in food, analytical aspects for their determination, toxicology and their impact on stakeholders. PMID:23047235

21 CFR 868.5550 - Anesthetic gas mask.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

21 CFR 868.5550 - Anesthetic gas mask.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

21 CFR 868.5550 - Anesthetic gas mask.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

21 CFR 868.5550 - Anesthetic gas mask.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

21 CFR 868.5550 - Anesthetic gas mask.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

Informational masking and musical training

NASA Astrophysics Data System (ADS)

Oxenham, Andrew J.; Fligor, Brian J.; Mason, Christine R.; Kidd, Gerald

2003-09-01

The relationship between musical training and informational masking was studied for 24 young adult listeners with normal hearing. The listeners were divided into two groups based on musical training. In one group, the listeners had little or no musical training; the other group was comprised of highly trained, currently active musicians. The hypothesis was that musicians may be less susceptible to informational masking, which is thought to reflect central, rather than peripheral, limitations on the processing of sound. Masked thresholds were measured in two conditions, similar to those used by Kidd et al. [J. Acoust. Soc. Am. 95, 3475-3480 (1994)]. In both conditions the signal was comprised of a series of repeated tone bursts at 1 kHz. The masker was comprised of a series of multitone bursts, gated with the signal. In one condition the frequencies of the masker were selected randomly for each burst; in the other condition the masker frequencies were selected randomly for the first burst of each interval and then remained constant throughout the interval. The difference in thresholds between the two conditions was taken as a measure of informational masking. Frequency selectivity, using the notched-noise method, was also estimated in the two groups. The results showed no difference in frequency selectivity between the two groups, but showed a large and significant difference in the amount of informational masking between musically trained and untrained listeners. This informational masking task, which requires no knowledge specific to musical training (such as note or interval names) and is generally not susceptible to systematic short- or medium-term training effects, may provide a basis for further studies of analytic listening abilities in different populations.

Effects of immobilization mask material on surface dose

PubMed Central

Hadley, Scott W.; Kelly, Robin; Lam, Kwok

2005-01-01

This work investigates the increase in surface dose caused by thermoplastic masks used for patient positioning and immobilization. A thermoplastic mask is custom fit by stretching a heated mask over the patient at the time of treatment simulation. This mask is then used at treatment to increase the reproducibility of the patient position. The skin sparing effect of mega‐voltage X‐ray beams can be reduced when the patient's skin surface is under the mask material. The sheet of thermoplastic mask has holes to reduce this effect and is available from one manufacturer with two different sizes of holes, one larger than the other. This work investigates the increase in surface dose caused by the mask material and quantifies the difference between the two samples of masks available. The change in the dose buildup was measured using an Attix parallel plate chamber by measuring tissue maximum ratios (TMRs) using solid water. Measurements were made with and without the mask material on the surface of the solid water for 6‐MV and 15‐MV X‐ray beams. The effective thickness of equivalent water was estimated from the TMR curves, and the increase in surface dose was estimated. The buildup effect was measured to be equivalent to 2.2 mm to 0.6 mm for masks that have been stretched by different amounts. The surface dose was estimated to change from 16% and 12% for 6 MV and 15 MV, respectively, to 27% to 61% for 6 MV and 18% to 40% for 15 MV with the mask samples. PACS number: 87.53.Dq PMID:15770192

Emergency face-mask removal effectiveness: a comparison of traditional and nontraditional football helmet face-mask attachment systems.

PubMed

Swartz, Erik E; Belmore, Keith; Decoster, Laura C; Armstrong, Charles W

2010-01-01

Football helmet face-mask attachment design changes might affect the effectiveness of face-mask removal. To compare the efficiency of face-mask removal between newly designed and traditional football helmets. Controlled laboratory study. Applied biomechanics laboratory. Twenty-five certified athletic trainers. The independent variable was face-mask attachment system on 5 levels: (1) Revolution IQ with Quick Release (QR), (2) Revolution IQ with Quick Release hardware altered (QRAlt), (3) traditional (Trad), (4) traditional with hardware altered (TradAlt), and (5) ION 4D (ION). Participants removed face masks using a cordless screwdriver with a back-up cutting tool or only the cutting tool for the ION. Investigators altered face-mask hardware to unexpectedly challenge participants during removal for traditional and Revolution IQ helmets. Participants completed each condition twice in random order and were blinded to hardware alteration. Removal success, removal time, helmet motion, and rating of perceived exertion (RPE). Time and 3-dimensional helmet motion were recorded. If the face mask remained attached at 3 minutes, the trial was categorized as unsuccessful. Participants rated each trial for level of difficulty (RPE). We used repeated-measures analyses of variance (α  =  .05) with follow-up comparisons to test for differences. Removal success was 100% (48 of 48) for QR, Trad, and ION; 97.9% (47 of 48) for TradAlt; and 72.9% (35 of 48) for QRAlt. Differences in time for face-mask removal were detected (F(4,20)  =  48.87, P  =  .001), with times ranging from 33.96 ± 14.14 seconds for QR to 99.22 ± 20.53 seconds for QRAlt. Differences were found in range of motion during face-mask removal (F(4,20)  =  16.25, P  =  .001), with range of motion from 10.10° ± 3.07° for QR to 16.91° ± 5.36° for TradAlt. Differences also were detected in RPE during face-mask removal (F(4,20)  =  43.20, P  =  .001), with participants reporting average

Emergency Face-Mask Removal Effectiveness: A Comparison of Traditional and Nontraditional Football Helmet Face-Mask Attachment Systems

PubMed Central

Swartz, Erik E.; Belmore, Keith; Decoster, Laura C.; Armstrong, Charles W.

2010-01-01

Abstract Context: Football helmet face-mask attachment design changes might affect the effectiveness of face-mask removal. Objective: To compare the efficiency of face-mask removal between newly designed and traditional football helmets. Design: Controlled laboratory study. Setting: Applied biomechanics laboratory. Participants: Twenty-five certified athletic trainers. Intervention(s): The independent variable was face-mask attachment system on 5 levels: (1) Revolution IQ with Quick Release (QR), (2) Revolution IQ with Quick Release hardware altered (QRAlt), (3) traditional (Trad), (4) traditional with hardware altered (TradAlt), and (5) ION 4D (ION). Participants removed face masks using a cordless screwdriver with a back-up cutting tool or only the cutting tool for the ION. Investigators altered face-mask hardware to unexpectedly challenge participants during removal for traditional and Revolution IQ helmets. Participants completed each condition twice in random order and were blinded to hardware alteration. Main Outcome Measure(s): Removal success, removal time, helmet motion, and rating of perceived exertion (RPE). Time and 3-dimensional helmet motion were recorded. If the face mask remained attached at 3 minutes, the trial was categorized as unsuccessful. Participants rated each trial for level of difficulty (RPE). We used repeated-measures analyses of variance (α  =  .05) with follow-up comparisons to test for differences. Results: Removal success was 100% (48 of 48) for QR, Trad, and ION; 97.9% (47 of 48) for TradAlt; and 72.9% (35 of 48) for QRAlt. Differences in time for face-mask removal were detected (F4,20  =  48.87, P  =  .001), with times ranging from 33.96 ± 14.14 seconds for QR to 99.22 ± 20.53 seconds for QRAlt. Differences were found in range of motion during face-mask removal (F4,20  =  16.25, P  =  .001), with range of motion from 10.10° ± 3.07° for QR to 16.91° ± 5.36° for TradAlt. Differences also were detected

Mask etcher data strategy for 45nm and beyond

NASA Astrophysics Data System (ADS)

Lewington, Richard; Ibrahim, Ibrahim M.; Panayil, Sheeba; Kumar, Ajay; Yamartino, John

2006-05-01

Mask Etching for the 45nm technology node and beyond requires a system-level data and diagnostics strategy. This necessity stems from the need to control the performance of the mask etcher to increasingly stringent and diverse requirements of the mask production environment. Increasing mask costs and the capability to acquire and consolidate a wealth of data within the mask etch platform are primary motivators towards harnessing data mines for feedback into the mask etching optimization. There are offline and real-time possibilities and scenarios. Here, we discuss the data architecture, acquisition, and strategies of the Applied Materials Tetra II TM Mask Etch System.

Mask-induced aberration in EUV lithography

NASA Astrophysics Data System (ADS)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

2008-10-01

Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an

Coronagraphic mask design using Hermite functions.

PubMed

Cagigal, Manuel P; Canales, Vidal F; Valle, Pedro J; Oti, José E

2009-10-26

We introduce a stellar coronagraph that uses a coronagraphic mask described by a Hermite function or a combination of them. It allows the detection of exoplanets providing both deep starlight extinction and high angular resolution. This angular resolution depends on the order of the Hermite function used. An analysis of the coronagraph performance is carried out for different even order masks. Numerical simulations of the ideal case, with no phase errors and perfect telescope pointing, show that on-axis starlight is reduced to very low intensity levels corresponding to a gain of at least 25 magnitudes (10(-10) light intensity reduction). The coronagraphic throughput depends on the Hermite function or combination selected. The proposed mask series presents the same advantages of band limited masks along with the benefit of reducing the light diffracted by the mask border thanks to its particular shape. Nevertheless, for direct detection of Earth-like exoplanets it requires the use of adaptive optics facilities for compensating the perturbations introduced by the atmosphere and by the optical system.

Lithography-free glass surface modification by self-masking during dry etching

NASA Astrophysics Data System (ADS)

Hein, Eric; Fox, Dennis; Fouckhardt, Henning

2011-01-01

Glass surface morphologies with defined shapes and roughness are realized by a two-step lithography-free process: deposition of an ~10-nm-thin lithographically unstructured metallic layer onto the surface and reactive ion etching in an Ar/CF4 high-density plasma. Because of nucleation or coalescence, the metallic layer is laterally structured during its deposition. Its morphology exhibits islands with dimensions of several tens of nanometers. These metal spots cause a locally varying etch velocity of the glass substrate, which results in surface structuring. The glass surface gets increasingly rougher with further etching. The mechanism of self-masking results in the formation of surface structures with typical heights and lateral dimensions of several hundred nanometers. Several metals, such as Ag, Al, Au, Cu, In, and Ni, can be employed as the sacrificial layer in this technology. Choice of the process parameters allows for a multitude of different glass roughness morphologies with individual defined and dosed optical scattering.

Current status of x-ray mask manufacturing at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-07-01

The Microlithographic Mask Development Center (MMD) has been the focal point of X-ray mask development efforts in the United States since its inception in 1993. Funded by the Advanced Research Projects Agency (ARPA), and with technical support from the Proximity X-ray Lithography Association (AT&T, IBM, Loral Federal Systems, and Motorola) the MMD has recently made dramatic advances in mask fabrication. Numerous defect-free 64Mb and 256Mb DRAM masks have been made on both boron-doped silicon and silicon carbide substrates. Image-placement error of less than 35nm 3 sigma is achieved with high yield. Image-size (critical dimension) control of 25nm 3 sigma on 250nm nominal images is representative performance. This progress is being made in a manufacturing environment with significant volumes, multiple customers, multiple substrate configurations, and fast turnaround-time (TAT) requirements. The MMD state-of-the-art equipment infrastructure has made much of this progress possible. This year the MMD qualified the EL-4, an IBM-designed-and-built variable-shaped-spot e-beam system. The fundamental performance parameters of this system will be described. Operational techniques of multiple partial exposure writing and product specific emulation (PSE) have been implemented to improve image-placement accuracy with remarkable success. Image-size control was studied in detail with contributory components separated. Defect density was systematically reduced to yield defect-free masks while simultaneously tightening inspection criteria. Information about these and other recent engineering highlights will be reported. An outline of the primary engineering challenges and goals for 1996 and status of progress toward 100 nm design rule capability will also be given.

The performances of standard and ResMed masks during bag-valve-mask ventilation.

PubMed

Lee, Hyoung Youn; Jeung, Kyung Woon; Lee, Byung Kook; Lee, Seung Joon; Jung, Yong Hun; Lee, Geo Sung; Min, Yong Il; Heo, Tag

2013-01-01

A tight mask seal is frequently difficult to obtain and maintain during single-rescuer bag-valve-mask (BVM) ventilation. The ResMed mask (Bella Vista, NSW, Australia) is a continuous-positive-airway-pressure mask (CM) designed for noninvasive ventilation. In this study, we compared the ventilation performances of a standard mask (SM) and a ResMed CM using a simulation manikin in an out-of-hospital single-rescuer BVM ventilation scenario. Thirty emergency medical technicians (EMTs) performed two 2-minute attempts to ventilate a simulation manikin using BVM ventilation, alternatively, with the SM or the ResMed CM in a randomized order. Ventilation parameters including tidal volume and peak airway pressure were measured using computer analysis software connected to the simulation manikin. Successful volume delivery was defined as delivery of 440-540 mL of tidal volume in accord with present cardiopulmonary resuscitation guidelines. BVM ventilation using the ResMed CM produced higher mean (± standard deviation) tidal volumes (452 ± 50 mL vs. 394 ± 113 mL, p = 0.014) and had a higher proportion of successful volume deliveries (65.3% vs. 26.7%, p < 0.001) than that using the SM. Peak airway pressure was higher in BVM ventilation using the ResMed CM (p = 0.035). Stomach insufflation did not occur during either method. Twenty-nine of the participants (96.7%) preferred BVM ventilation using the ResMed CM. BVM ventilations using ResMed CM resulted in a significantly higher proportion of successful volume deliveries meeting the currently recommended range of tidal volume. Clinical studies are needed to determine the value of the ResMed CM for BVM ventilation.

Respiratory Source Control Using Surgical Masks With Nanofiber Media

PubMed Central

Skaria, Shaji D.; Smaldone, Gerald C.

2014-01-01

Background: Potentially infected individuals (‘source’) are sometimes encouraged to use face masks to reduce exposure of their infectious aerosols to others (‘receiver’). To improve compliance with Respiratory Source Control via face mask and therefore reduce receiver exposure, a mask should be comfortable and effective. We tested a novel face mask designed to improve breathability and filtration using nanofiber filtration. Methods: Using radiolabeled test aerosols and a calibrated exposure chamber simulating source to receiver interaction, facepiece function was measured with a life-like ventilated manikin model. Measurements included mask airflow resistance (pressure difference during breathing), filtration, (mask capture of exhaled radiolabeled test aerosols), and exposure (the transfer of ‘infectious’ aerosols from the ‘source’ to a ‘receiver’). Polydisperse aerosols were measured at the source with a mass median aerodynamic diameter of 0.95 µm. Approximately 90% of the particles were <2.0 µm. Tested facepieces included nanofiber prototype surgical masks, conventional surgical masks, and for comparison, an N95-class filtering facepiece respirator (commonly known as an ‘N95 respirator’). Airflow through and around conventional surgical face mask and nanofiber prototype face mask was visualized using Schlieren optical imaging. Results: Airflow resistance [ΔP, cmH2O] across sealed surgical masks (means: 0.1865 and 0.1791 cmH2O) approached that of the N95 (mean: 0.2664 cmH2O). The airflow resistance across the nanofiber face mask whether sealed or not sealed (0.0504 and 0.0311 cmH2O) was significantly reduced in comparison. In addition, ‘infected’ source airflow filtration and receiver exposure levels for nanofiber face masks placed on the source were comparable to that achieved with N95 placed on the source; 98.98% versus 82.68% and 0.0194 versus 0.0557, respectively. Compared to deflection within and around the conventional face

Respiratory source control using surgical masks with nanofiber media.

PubMed

Skaria, Shaji D; Smaldone, Gerald C

2014-07-01

Potentially infected individuals ('source') are sometimes encouraged to use face masks to reduce exposure of their infectious aerosols to others ('receiver'). To improve compliance with Respiratory Source Control via face mask and therefore reduce receiver exposure, a mask should be comfortable and effective. We tested a novel face mask designed to improve breathability and filtration using nanofiber filtration. Using radiolabeled test aerosols and a calibrated exposure chamber simulating source to receiver interaction, facepiece function was measured with a life-like ventilated manikin model. Measurements included mask airflow resistance (pressure difference during breathing), filtration, (mask capture of exhaled radiolabeled test aerosols), and exposure (the transfer of 'infectious' aerosols from the 'source' to a 'receiver'). Polydisperse aerosols were measured at the source with a mass median aerodynamic diameter of 0.95 µm. Approximately 90% of the particles were <2.0 µm. Tested facepieces included nanofiber prototype surgical masks, conventional surgical masks, and for comparison, an N95-class filtering facepiece respirator (commonly known as an 'N95 respirator'). Airflow through and around conventional surgical face mask and nanofiber prototype face mask was visualized using Schlieren optical imaging. Airflow resistance [ΔP, cmH2O] across sealed surgical masks (means: 0.1865 and 0.1791 cmH2O) approached that of the N95 (mean: 0.2664 cmH2O). The airflow resistance across the nanofiber face mask whether sealed or not sealed (0.0504 and 0.0311 cmH2O) was significantly reduced in comparison. In addition, 'infected' source airflow filtration and receiver exposure levels for nanofiber face masks placed on the source were comparable to that achieved with N95 placed on the source; 98.98% versus 82.68% and 0.0194 versus 0.0557, respectively. Compared to deflection within and around the conventional face masks, Schlieren optical imaging demonstrated enhanced

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

The Art of Japanese Masks and Kimonos

ERIC Educational Resources Information Center

Brooks, Nancy Johnston

2009-01-01

Japanese masks have been worn for a number of reasons. In the past they were often used in plays and celebrations. Today in Japan, social masks are essential in many party gatherings as a form of expressing one's personality. In this article, the author describes an art project wherein students created Japanese masks and kimonos.

Method for mask repair using defect compensation

DOEpatents

Sweeney, Donald W.; Ray-Chaudhuri, Avijit K.

2001-01-01

A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

Mask cost of ownership for advanced lithography

NASA Astrophysics Data System (ADS)

Muzio, Edward G.; Seidel, Philip K.

2000-07-01

As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

Mask aligner for ultrahigh vacuum with capacitive distance control

NASA Astrophysics Data System (ADS)

Bhaskar, Priyamvada; Mathioudakis, Simon; Olschewski, Tim; Muckel, Florian; Bindel, Jan Raphael; Pratzer, Marco; Liebmann, Marcus; Morgenstern, Markus

2018-04-01

We present a mask aligner driven by three piezomotors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed at a μm distance from the sample surface, while keeping it parallel to the surface, without touching the sample by the mask a priori. Samples and masks can be exchanged in-situ and the mask can additionally be displaced parallel to the surface. We demonstrate an edge sharpness of the deposited structures below 100 nm, which is likely limited by the diffusion of the deposited Au on Si(111).

Masked Repetition Priming Using Magnetoencephalography

ERIC Educational Resources Information Center

Monahan, Philip J.; Fiorentino, Robert; Poeppel, David

2008-01-01

Masked priming is used in psycholinguistic studies to assess questions about lexical access and representation. We present two masked priming experiments using MEG. If the MEG signal elicited by words reflects specific aspects of lexical retrieval, then one expects to identify specific neural correlates of retrieval that are sensitive to priming.…

Advanced EUV mask and imaging modeling

NASA Astrophysics Data System (ADS)

Evanschitzky, Peter; Erdmann, Andreas

2017-10-01

The exploration and optimization of image formation in partially coherent EUV projection systems with complex source shapes requires flexible, accurate, and efficient simulation models. This paper reviews advanced mask diffraction and imaging models for the highly accurate and fast simulation of EUV lithography systems, addressing important aspects of the current technical developments. The simulation of light diffraction from the mask employs an extended rigorous coupled wave analysis (RCWA) approach, which is optimized for EUV applications. In order to be able to deal with current EUV simulation requirements, several additional models are included in the extended RCWA approach: a field decomposition and a field stitching technique enable the simulation of larger complex structured mask areas. An EUV multilayer defect model including a database approach makes the fast and fully rigorous defect simulation and defect repair simulation possible. A hybrid mask simulation approach combining real and ideal mask parts allows the detailed investigation of the origin of different mask 3-D effects. The image computation is done with a fully vectorial Abbe-based approach. Arbitrary illumination and polarization schemes and adapted rigorous mask simulations guarantee a high accuracy. A fully vectorial sampling-free description of the pupil with Zernikes and Jones pupils and an optimized representation of the diffraction spectrum enable the computation of high-resolution images with high accuracy and short simulation times. A new pellicle model supports the simulation of arbitrary membrane stacks, pellicle distortions, and particles/defects on top of the pellicle. Finally, an extension for highly accurate anamorphic imaging simulations is included. The application of the models is demonstrated by typical use cases.

Adaptation to different noninvasive ventilation masks in critically ill patients*

PubMed Central

da Silva, Renata Matos; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

2013-01-01

OBJECTIVE: To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. METHODS: An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. RESULTS: We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. CONCLUSIONS: In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed. PMID:24068269

Adaptation to different noninvasive ventilation masks in critically ill patients.

PubMed

Silva, Renata Matos da; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

2013-01-01

To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed.

Attentional capture by masked colour singletons.

PubMed

Ansorge, Ulrich; Horstmann, Gernot; Worschech, Franziska

2010-09-15

We tested under which conditions a colour singleton of which an observer is unaware captures attention. To prevent visual awareness of the colour singleton, we used backward masking. We find that a masked colour singleton cue captures attention if it matches the observer's goal to search for target colours but not if it is task-irrelevant. This is also reflected in event-related potentials to the visible target: the masked goal-matching cue elicits an attentional potential (N2pc) in a target search task. By contrast, a non-matching but equally strong masked colour singleton cue failed to elicit a capture effect and an N2pc. Results are discussed with regard to currently pertaining conceptions of attentional capture by colour singletons. Copyright 2010 Elsevier Ltd. All rights reserved.

Microstructure analysis and wear behavior of titanium cermet femoral head with hard TiC layer.

PubMed

Luo, Yong; Ge, Shirong; Liu, Hongtao; Jin, Zhongmin

2009-12-11

Titanium cermet was successfully synthesized and formed a thin gradient titanium carbide coating on the surface of Ti6Al4V alloy by using a novel sequential carburization under high temperature, while the titanium cermet femoral head was produced. The titanium cermet phase and surface topography were characterized with X-ray diffraction (XRD) and backscattered electron imaging (BSE). And then the wear behavior of titanium cermet femoral head was investigated by using CUMT II artificial joint hip simulator. The surface characterization indicates that carbon effectively diffused into the titanium alloys and formed a hard TiC layer on the Ti6Al4V alloys surface with a micro-porous structure. The artificial hip joint experimental results show that titanium cermet femoral head could not only improve the wear resistance of artificial femoral head, but also decrease the wear of UHMWPE joint cup. In addition, the carburized titanium alloy femoral head could effectively control the UHMWPE debris distribution, and increase the size of UHMWPE debris. All of the results suggest that titanium cermet is a prospective femoral head material in artificial joint.

Objective measures of binaural masking level differences and comodulation masking release based on late auditory evoked potentials.

PubMed

Epp, Bastian; Yasin, Ifat; Verhey, Jesko L

2013-12-01

The audibility of important sounds is often hampered due to the presence of other masking sounds. The present study investigates if a correlate of the audibility of a tone masked by noise is found in late auditory evoked potentials measured from human listeners. The audibility of the target sound at a fixed physical intensity is varied by introducing auditory cues of (i) interaural target signal phase disparity and (ii) coherent masker level fluctuations in different frequency regions. In agreement with previous studies, psychoacoustical experiments showed that both stimulus manipulations result in a masking release (i: binaural masking level difference; ii: comodulation masking release) compared to a condition where those cues are not present. Late auditory evoked potentials (N1, P2) were recorded for the stimuli at a constant masker level, but different signal levels within the same set of listeners who participated in the psychoacoustical experiment. The data indicate differences in N1 and P2 between stimuli with and without interaural phase disparities. However, differences for stimuli with and without coherent masker modulation were only found for P2, i.e., only P2 is sensitive to the increase in audibility, irrespective of the cue that caused the masking release. The amplitude of P2 is consistent with the psychoacoustical finding of an addition of the masking releases when both cues are present. Even though it cannot be concluded where along the auditory pathway the audibility is represented, the P2 component of auditory evoked potentials is a candidate for an objective measure of audibility in the human auditory system. Copyright © 2013 Elsevier B.V. All rights reserved.

Neonatal mannequin comparison of the Upright self-inflating bag and snap-fit mask versus standard resuscitators and masks: leak, applied load and tidal volumes.

PubMed

Rafferty, Anthony Richard; Johnson, Lucy; Davis, Peter G; Dawson, Jennifer Anne; Thio, Marta; Owen, Louise S

2017-11-30

Neonatal mask ventilation is a difficult skill to acquire and maintain. Mask leak is common and can lead to ineffective ventilation. The aim of this study was to determine whether newly available neonatal self-inflating bags and masks could reduce mask leak without additional load being applied to the face. Forty operators delivered 1 min episodes of mask ventilation to a mannequin using the Laerdal Upright Resuscitator, a standard Laerdal infant resuscitator (Laerdal Medical) and a T-Piece Resuscitator (Neopuff), using both the Laerdal snap-fit face mask and the standard Laerdal size 0/1 face mask (equivalent sizes). Participants were asked to use pressure sufficient to achieve 'appropriate' chest rise. Leak, applied load, airway pressure and tidal volume were measured continuously. Participants were unaware that load was being recorded. There was no difference in mask leak between resuscitation devices. Leak was significantly lower when the snap-fit mask was used with all resuscitation devices, compared with the standard mask (14% vs 37% leak, P<0.01). The snap-fit mask was preferred by 83% of participants. The device-mask combinations had no significant effect on applied load. The Laerdal Upright Resuscitator resulted in similar leak to the other resuscitation devices studied, and did not exert additional load to the face and head. The snap-fit mask significantly reduced overall leak with all resuscitation devices and was the mask preferred by participants. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Hard X-ray Emission along the Z Track in GX 17 + 2

NASA Astrophysics Data System (ADS)

Ding, G. Q.; Huang, C. P.

2015-09-01

Using the data from the Proportional Counter Array (PCA) and the High-Energy X-ray Timing Experiment (HEXTE) on board Rossi X-Ray Timing Explorer for Z source GX 17 + 2, we investigate the evolution of its PCA spectra and HEXTE spectra along a `Z' track on its hardness-intensity diagram. A hard X-ray tail is detected in the HEXTE spectra. The detected hard X-ray tails are discontinuously scattered throughout the Z track. The found hard X-ray tail hardens from the horizontal branch, through the normal branch, to the flaring branch in principle and it contributes ˜(20-50)% of the total flux in 20-200 keV. Our joint fitting results of the PCA + HEXTE spectra in 3-200 keV show that the portion of Comptonization in the Bulk-Motion Comptonization (BMC) model accounts for the hard X-ray tail, which indicates that the BMC process could be responsible for the detected hard tail. The temperature of the seed photons for BMC is ˜2.7 keV, implying that these seed photons might be emitted from the surface of the neutron star (NS) or the boundary layer between the NS and the disk and, therefore, this process could take place around the NS or in the boundary layer.

Improved adhesion of ultra-hard carbon films on cobalt–chromium orthopaedic implant alloy

PubMed Central

Vaid, Rishi; Diggins, Patrick; Weimer, Jeffrey J.; Koopman, M.; Vohra, Yogesh K.

2010-01-01

While interfacial graphite formation and subsequent poor film adhesion is commonly reported for chemical vapor deposited hard carbon films on cobalt-based materials, we find the presence of O2 in the feedgas mixture to be useful in achieving adhesion on a CoCrMo alloy. Nucleation studies of surface structure before formation of fully coalesced hard carbon films reveal that O2 feedgas helps mask the catalytic effect of cobalt with carbon through early formation of chromium oxides and carbides. The chromium oxides, in particular, act as a diffusion barrier to cobalt, minimizing its migration to the surface where it would otherwise interact deleteriously with carbon to form graphite. When O2 is not used, graphitic soot forms and films delaminate readily upon cooling to room temperature. Continuous 1 μm-thick nanostructured carbon films grown with O2 remain adhered with measured hardness of 60 GPa and show stable, non-catastrophic circumferential micro-cracks near the edges of indent craters made using Rockwell indentation. PMID:21221739

Effect of Ibuprofen on masking endodontic diagnosis.

PubMed

Read, Jason K; McClanahan, Scott B; Khan, Asma A; Lunos, Scott; Bowles, Walter R

2014-08-01

An accurate diagnosis is of upmost importance before initiating endodontic treatment; yet, there are occasions when the practitioner cannot reproduce the patient's chief complaint because the patient has become asymptomatic. Ibuprofen taken beforehand may "mask" or eliminate the patient's symptoms. In fact, 64%-83% of patients with dental pain take analgesics before seeing a dentist. The purpose of this study was to examine the possible "masking" effect of ibuprofen on endodontic diagnostic tests. Forty-two patients with endodontic pain underwent testing (cold, percussion, palpation, and bite force measurement) and then received either placebo or 800 mg ibuprofen. Both patients and operators were blinded to the medication received. One hour later, diagnostic testing was repeated and compared with pretreatment testing. Ibuprofen affected testing values for vital teeth by masking palpation 40%, percussion 25%, and cold 25% on affected teeth with symptomatic irreversible pulpitis and symptomatic apical periodontitis. There was no observed masking effect in the placebo group on palpation, percussion, or cold values. When nonvital teeth were included, the masking effect of ibuprofen was decreased. However, little masking occurred with the bite force measurement differences. Analgesics taken before the dental appointment can affect endodontic diagnostic testing results. Bite force measurements can assist in identifying the offending tooth in cases in which analgesics "mask" the endodontic diagnosis. Copyright © 2014 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Bulk sensitive hard x-ray photoemission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, M., E-mail: m.patt@fz-juelich.de; Wiemann, C.; Weber, N.

Hard x-ray photoelectron spectroscopy (HAXPES) has now matured into a well-established technique as a bulk sensitive probe of the electronic structure due to the larger escape depth of the highly energetic electrons. In order to enable HAXPES studies with high lateral resolution, we have set up a dedicated energy-filtered hard x-ray photoemission electron microscope (HAXPEEM) working with electron kinetic energies up to 10 keV. It is based on the NanoESCA design and also preserves the performance of the instrument in the low and medium energy range. In this way, spectromicroscopy can be performed from threshold to hard x-ray photoemission. Themore » high potential of the HAXPEEM approach for the investigation of buried layers and structures has been shown already on a layered and structured SrTiO{sub 3} sample. Here, we present results of experiments with test structures to elaborate the imaging and spectroscopic performance of the instrument and show the capabilities of the method to image bulk properties. Additionally, we introduce a method to determine the effective attenuation length of photoelectrons in a direct photoemission experiment.« less

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer

Is tinnitus an early voice of masked hypertension? High masked hypertension rate in patients with tinnitus.

PubMed

Gun, Taylan; Özkan, Selçuk; Yavuz, Bunyamin

2018-04-23

Tinnitus is hearing a sound without any external acoustic stimulus. There are some clues of hypertension can cause tinnitus in different ways. The aim of the study was to evaluate the relationship between tinnitus and masked hypertension including echocardiographic parameters and severity of tinnitus. This study included 88 patients with tinnitus of at least 3 months duration and 85 age and gender-matched control subjects. Tinnitus severity index was used to classify the patients with tinnitus. After a complete medical history, all subjects underwent routine laboratory examination, office blood pressure measurement, hearing tests and ambulatory blood pressure monitoring. Masked hypertension is defined as normal office blood pressure measurement and high ambulatory blood pressure level. Baseline characteristics in patients and controls were similar. Prevalence of masked hypertension was significantly higher in patients with tinnitus than controls (18.2% vs 3.5%, p = 0.002). Office diastolic BP (76 ± 8.1 vs. 72.74 ± 8.68, p = 0.01), ambulatory 24-H diastolic BP (70.2 ± 9.6 vs. 66.9 ± 6.1, p = 0.07) and ambulatory daytime diastolic BP (73.7 ± 9.5 vs. 71.1 ± 6.2, p = 0.03) was significantly higher in patients with tinnitus than control group. Tinnitus severity index in patients without masked hypertension was 0 and tinnitus severity index in patients with masked hypertension were 2 (1-5). This study demonstrated that masked hypertension must be kept in mind if there is a complaint of tinnitus without any other obvious reason.

Face mask use by patients in primary care.

PubMed

Tischendorf, Jessica S; Temte, Jonathan L

2012-02-01

Face masks are recommended for patients with respiratory symptoms to reduce influenza transmission. Little knowledge exists regarding actual utilization and acceptance of face masks in primary care. Compare distribution of face masks to clinic and community trends in respiratory infection (RI) and influenza-like illness (ILI); estimate the annual need for face masks in primary care. Retrospective observational study of practice data from a 31-week period starting in October 2009. Family practice clinic in Madison, Wis. Patients with fever, cough, or other respiratory symptoms as evaluated by reception staff. Age, sex, and weekly counts of individuals receiving a face mask, as well as counts of RI and ILI patients based on ICD-9 coding from 27 statewide clinics. Face mask counts were 80% of RI counts for the clinic and reflected the demographics of the clinic population. Distribution was correlated to prevalence of RI (R = 0.783, P < 0.001) and ILI (R = 0.632, P < 0.001). Annually, 8% of clinic visits were for RI. The high percentage of face mask use among RI patients reflects the feasibility of this intervention to help control influenza transmission in a primary care setting. Using the present data, clinics can estimate the annual need for face masks.

The 2002 to 2010 mask survey trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David

2011-03-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

Monaural informational masking release in children and adults

NASA Astrophysics Data System (ADS)

Buss, Emily; Hall, Joseph W.; Grose, John H.

2004-05-01

Informational masking refers to an elevation in signal threshold due to stimulus uncertainty, rather than to energetic masking. This study assessed informational masking and utilization of cues to reduce that masking in children aged 5-9 and adults. We used a manipulation introduced by Kidd et al. [J. Acoust. Soc. Am. 95, 3475-3480 (1994)] in which the signal was a train of eight consecutive tone bursts, each at 1 kHz and 60 ms in duration. Maskers were comprised of a pair of synchronous tone-burst trains whose frequencies were selected from the range spanning 0.2-5 kHz, with a protected region 851-1175 Hz. In the reference condition, where informational masking is pronounced, these maskers were eight bursts and had a fixed frequency within each interval, with new frequencies chosen randomly prior to each interval. Two conditions of masking release were tested: random frequency selection for each masker burst and a masker leading fringe of two additional 60-ms bursts. Both children and adults showed a significant informational masking effect, with children showing a larger effect. Both groups also showed significant release from masking, though initial results suggest that this may have been reduced in the youngest children. [Work supported by NIH, RO1 DC00397.

Visual Masking in Schizophrenia: Overview and Theoretical Implications

PubMed Central

Green, Michael F.; Lee, Junghee; Wynn, Jonathan K.; Mathis, Kristopher I.

2011-01-01

Visual masking provides several key advantages for exploring the earliest stages of visual processing in schizophrenia: it allows for control over timing at the millisecond level, there are several well-supported theories of the underlying neurobiology of visual masking, and it is amenable to examination by electroencephalogram (EEG) and functional magnetic resonance imaging (fMRI). In this paper, we provide an overview of the visual masking impairment schizophrenia, including the relevant theoretical mechanisms for masking impairment. We will discuss its relationship to clinical symptoms, antipsychotic medications, diagnostic specificity, and presence in at-risk populations. As part of this overview, we will cover the neural correlates of visual masking based on recent findings from EEG and fMRI. Finally, we will suggest a possible mechanism that could explain the patterns of masking findings and other visual processing findings in schizophrenia. PMID:21606322

Influence of face mask design on bag-valve-mask ventilation performance: a randomized simulation study.

PubMed

Na, J U; Han, S K; Choi, P C; Cho, J H; Shin, D H

2013-10-01

Different face mask designs can influence bag-valve-mask (BVM) ventilation performance during resuscitation. We compared a single-use, air-cushioned face mask (AM) with a reusable silicone face mask (SM) for quality of BVM ventilation on a manikin simulating cardiac arrest. Thirty-two physicians were recruited, and a prospective, randomized, crossover observational study was conducted after an American Heart Association-accredited basic life support provider course and standardized practice time were completed. Participants performed 12 cycles of BVM ventilation with both the AM and SM on a SmartMan lung simulator. Mean tidal volume was significantly higher in ventilations performed using the AM vs. the SM (548 ± 159 ml vs. 439 ± 163 ml, P < 0.01). In addition, the proportion of low-volume ventilation was significantly lower with the AM than the SM [6/12 (2-11) vs. 9/12 (5-12), P = 0.03]. Bag-valve-AM ventilation volume was not affected by the physical characteristics of the rescuers, except for sex. In contrast, bag-valve-SM ventilation volume was affected by most of the characteristics tested, including sex, height, weight, hand width, hand length, and grip power. The AM seems to be a more efficient face mask than the SM at delivering sufficient ventilation volumes. The performance of the AM did not seem to be associated with the physical characteristics of the rescuers, whereas that of the SM was affected by these factors. The SM may not be an appropriate face mask for performing one-person BVM ventilation during resuscitation for rescuers who are smaller in stature, have a smaller hand size, or have weaker grip power. © 2013 The Acta Anaesthesiologica Scandinavica Foundation. Published by John Wiley & Sons Ltd.

Noninvasive CPAP with face mask: comparison among new air-entrainment masks and the Boussignac valve.

PubMed

Mistraletti, Giovanni; Giacomini, Matteo; Sabbatini, Giovanni; Pinciroli, Riccardo; Mantovani, Elena S; Umbrello, Michele; Palmisano, Debora; Formenti, Paolo; Destrebecq, Anne L L; Iapichino, Gaetano

2013-02-01

The performances of 2 noninvasive CPAP systems (high flow and low flow air-entrainment masks) were compared to the Boussignac valve in 3 different scenarios. Scenario 1: pneumatic lung simulator with a tachypnea pattern (tidal volume 800 mL at 40 breaths/min). Scenario 2: Ten healthy subjects studied during tidal breaths and tachypnea. Scenario 3: Twenty ICU subjects enrolled for a noninvasive CPAP session. Differences between set and effective CPAP level and F(IO(2)), as well as the lowest airway pressure and the pressure swing around the imposed CPAP level, were analyzed. The lowest airway pressure and swing were correlated to the pressure-time product (area of the airway pressure curve below the CPAP level) measured with the simulator. P(aO(2)) was a subject's further performance index. Lung simulator: Boussignac F(IO(2)) was 0.54, even if supplied with pure oxygen. The air-entrainment masks had higher swing than the Boussignac (P = .007). Pressure-time product correlated better with pressure swing (Spearman correlation coefficient [ρ] = 0.97) than with lowest airway pressure (ρ = 0.92). In healthy subjects, the high-flow air-entrainment mask showed lower difference between set and effective F(IO(2)) (P < .001), and lowest airway pressure (P < .001), compared to the Boussignac valve. In all measurements the Boussignac valve showed higher than imposed CPAP level (P < .001). In ICU subjects the high-flow mask had lower swing than the Boussignac valve (P = .03) with similar P(aO(2)) increase. High-flow air-entrainment mask showed the best performance in human subjects. During high flow demand, the Boussignac valve delivered lower than expected F(IO(2)) and showed higher dynamic hyper-pressurization than the air-entrainment masks. © 2013 Daedalus Enterprises.

Study on the Mechanical Properties of Bionic Coupling Layered B4C/5083Al Composite Materials

PubMed Central

Zhao, Qian; Liang, Yunhong; Liu, Qingping; Zhang, Zhihui; Yu, Zhenglei; Ren, Luquan

2018-01-01

Based on microstructure characteristics of Meretrix lusoria shell and Rapana venosa shell, bionic coupling layered B4C/5083Al composites with different layered structures and hard/soft combination models were fabricated via hot pressed sintering. The simplified bionic coupling models with hard and soft layers were similar to layered structure and hardness tendency of shells, guiding the bionic design and fabrication. B4C/5083Al composites with various B4C contents and pure 5083Al were treated as hard and soft layers, respectively. Hot pressed sintering maintained the designed bionic structure and enhanced high bonding strength between ceramics and matrix. Compared with B4C/5083Al composites, bionic layered composites exhibited high mechanical properties including flexural strength, fracture toughness, compressive strength and impact toughness. The hard layers absorbed applied loads in the form of intergranular fracture. Besides connection role, soft layers restrained slabbing phenomenon and reset extension direction of cracks among layers. The coupling functions of bionic composites proved the feasibility and practicability of bionic fabrication, providing a new method for improvement of ceramic/Al composite with properties of being lightweight and high mechanical strength. PMID:29701707

A New MRI Masking Technique Based on Multi-Atlas Brain Segmentation in Controls and Schizophrenia: A Rapid and Viable Alternative to Manual Masking.

PubMed

Del Re, Elisabetta C; Gao, Yi; Eckbo, Ryan; Petryshen, Tracey L; Blokland, Gabriëlla A M; Seidman, Larry J; Konishi, Jun; Goldstein, Jill M; McCarley, Robert W; Shenton, Martha E; Bouix, Sylvain

2016-01-01

Brain masking of MRI images separates brain from surrounding tissue and its accuracy is important for further imaging analyses. We implemented a new brain masking technique based on multi-atlas brain segmentation (MABS) and compared MABS to masks generated using FreeSurfer (FS; version 5.3), Brain Extraction Tool (BET), and Brainwash, using manually defined masks (MM) as the gold standard. We further determined the effect of different masking techniques on cortical and subcortical volumes generated by FreeSurfer. Images were acquired on a 3-Tesla MR Echospeed system General Electric scanner on five control and five schizophrenia subjects matched on age, sex, and IQ. Automated masks were generated from MABS, FS, BET, and Brainwash, and compared to MM using these metrics: a) volume difference from MM; b) Dice coefficients; and c) intraclass correlation coefficients. Mean volume difference between MM and MABS masks was significantly less than the difference between MM and FS or BET masks. Dice coefficient between MM and MABS was significantly higher than Dice coefficients between MM and FS, BET, or Brainwash. For subcortical and left cortical regions, MABS volumes were closer to MM volumes than were BET or FS volumes. For right cortical regions, MABS volumes were closer to MM volumes than were BET volumes. Brain masks generated using FreeSurfer, BET, and Brainwash are rapidly obtained, but are less accurate than manually defined masks. Masks generated using MABS, in contrast, resemble more closely the gold standard of manual masking, thereby offering a rapid and viable alternative. Copyright © 2015 by the American Society of Neuroimaging.

Exoplanet Coronagraph Shaped Pupil Masks and Laboratory Scale Star Shade Masks: Design, Fabrication and Characterization

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatha; White, Victor; Yee, Karl; Echternach, Pierre; Muller, Richard; Dickie, Matthew; Cady, Eric; Mejia Prada, Camilo; Ryan, Daniel; Poberezhskiy, Ilya;

Exoplanet coronagraph shaped pupil masks and laboratory scale star shade masks: design, fabrication and characterization

NASA Astrophysics Data System (ADS)

Balasubramanian, Kunjithapatham; White, Victor; Yee, Karl; Echternach, Pierre; Muller, Richard; Dickie, Matthew; Cady, Eric; Mejia Prada, Camilo; Ryan, Daniel; Poberezhskiy, Ilya; Zhou, Hanying; Kern, Brian; Riggs, A. J.; Zimmerman, Neil T.; Sirbu, Dan; Shaklan, Stuart; Kasdin, Jeremy

2015-09-01

Star light suppression technologies to find and characterize faint exoplanets include internal coronagraph instruments as well as external star shade occulters. Currently, the NASA WFIRST-AFTA mission study includes an internal coronagraph instrument to find and characterize exoplanets. Various types of masks could be employed to suppress the host star light to about 10-9 level contrast over a broad spectrum to enable the coronagraph mission objectives. Such masks for high contrast internal coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, achromaticity, etc. We present the approaches employed at JPL to produce pupil plane and image plane coronagraph masks by combining electron beam, deep reactive ion etching, and black silicon technologies with illustrative examples of each, highlighting milestone accomplishments from the High Contrast Imaging Testbed (HCIT) at JPL and from the High Contrast Imaging Lab (HCIL) at Princeton University. We also present briefly the technologies applied to fabricate laboratory scale star shade masks.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Indirect Coupling of Magnetic Layers via Domain Wall Fringing fields

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2001-03-01

Ferromagnetic films separated by thin metallic spacer layers are usually coupled through an indirect exchange interaction which oscillates in sign between ferro and antiferromagnetic coupling as a function of the spacer layer thickness^1. For both such metallic systems, and for multilayered systems in which the ferromagnetic films are separated by thin insulating layers, correlated roughness of the magnetic layers gives rise to a weak ferromagnetic coupling via dipole fields. Another type of dipolar coupling mechanism, which has largely been ignored, is that arising from domain wall fringing fields. These fields can be locally very large^2 and can result in the demagnetization of ferromagnetic films which are nominally highly coercive ("hard") in sandwiches comprised of "hard" and "soft" ferromagnetic layers. When the moment of the soft layer is reversed back and forth in small magnetic fields, much too small to affect the moment of the hard layer, substantial local fringing fields from domain walls created in the soft film gradually result in the demagnetization of the hard film. In some cases the moment of the hard layer decays in an oscillatory manner as it is successively partially demagnetized and remagnetized. This process has been observed on both macroscopic and microscopic length scales using SQUID magnetometry and high resolution photoemission electron microscopy, respectively^3. Magnetic interactions from domain wall fringing fields may be very important for magnetic devices, especially, magnetoresistance sensors and memory elements. [1] S.S.P. Parkin, N. More and K.P. Roche, Phys. Rev. Lett. 64, 2304 (1990); S.S.P. Parkin, Phys. Rev. Lett., 67, 3598 (1991). [2] L. Thomas, M. Samant and S.S.P. Parkin, Phys. Rev. Lett. 84, 1816 (2000). [3] L. Thomas, J Lüning, A. Scholl, F. Nolting, S. Anders, J. Stöhr and S.S.P. Parkin, Phys. Rev. Lett. 84, 3462 (2000).

Tuneable magnetic patterning of paramagnetic Fe{sub 60}Al{sub 40} (at. %) by consecutive ion irradiation through pre-lithographed shadow masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varea, A.; Surinach, S.; Baro, M. D.

2011-05-01

Arrays of ferromagnetic circular dots (with diameters ranging from 225 to 420 nm) have been prepared at the surface of atomically ordered paramagnetic Fe{sub 60}Al{sub 40} (at. %) sheets by means of ion irradiation through prelithographed poly(methyl methacrylate) (PMMA) masks. The cumulative effects of consecutive ion irradiation (using Ar{sup +} ions at 1.2 x 10{sup 14} ions/cm{sup 2} with 10, 13, 16, 19 and 22 keV incident energies) on the properties of the patterned dots have been investigated. A progressive increase in the overall magneto-optical Kerr signal is observed for increasingly larger irradiation energies, an effect which is ascribed tomore » accumulation of atomic disorder. Conversely, the coercivity, H{sub C}, shows a maximum after irradiating at 16-19 keV and it decreases for larger irradiation energies. Such a decrease in H{sub C} is ascribed to the formation of vortex states during magnetization reversal, in agreement with results obtained from micromagnetic simulations. At the same time, the PMMA layer, with an initial thickness of 90 nm, becomes progressively thinned during the successive irradiation processes. After irradiation at 22 keV, the remaining PMMA layer is too thin to stop the incoming ions and, consequently, ferromagnetism starts to be generated underneath the nominally masked areas. These experimental results are in agreement with calculations using the Monte-Carlo simulation Stopping Range of Ions in Matter software, which show that for exceedingly thin PMMA layers Ar{sup +} ions can reach the Fe{sub 60}Al{sub 40} layer despite the presence of the mask.« less

Phase-shifting point diffraction interferometer mask designs

DOEpatents

Goldberg, Kenneth Alan

2001-01-01

In a phase-shifting point diffraction interferometer, different image-plane mask designs can improve the operation of the interferometer. By keeping the test beam window of the mask small compared to the separation distance between the beams, the problem of energy from the reference beam leaking through the test beam window is reduced. By rotating the grating and mask 45.degree., only a single one-dimensional translation stage is required for phase-shifting. By keeping two reference pinholes in the same orientation about the test beam window, only a single grating orientation, and thus a single one-dimensional translation stage, is required. The use of a two-dimensional grating allows for a multiplicity of pinholes to be used about the pattern of diffracted orders of the grating at the mask. Orientation marks on the mask can be used to orient the device and indicate the position of the reference pinholes.

Simulation based mask defect repair verification and disposition

NASA Astrophysics Data System (ADS)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple

A closer look at four-dot masking of a foveated target

PubMed Central

Wilson, Hugh R.

2016-01-01

Four-dot masking with a common onset mask was recently demonstrated in a fully attended and foveated target (Filmer, Mattingley & Dux, 2015). Here, we replicate and extend this finding by directly comparing a four-dot mask with an annulus mask while probing masking as a function of mask duration, and target-mask separation. Our results suggest that while an annulus mask operates via spatially local contour interactions, a four-dot mask operates through spatially global mechanisms. We also measure how the visual system’s representation of an oriented bar is impacted by a four-dot mask, and find that masking here does not degrade the precision of perceived targets, but instead appears to be driven exclusively by rendering the target completely invisible. PMID:27280073

Functional neuroanatomy of visual masking deficits in schizophrenia.

PubMed

Green, Michael F; Lee, Junghee; Cohen, Mark S; Engel, Steven A; Korb, Alexander S; Nuechterlein, Keith H; Wynn, Jonathan K; Glahn, David C

2009-12-01

Visual masking procedures assess the earliest stages of visual processing. Patients with schizophrenia reliably show deficits on visual masking, and these procedures have been used to explore vulnerability to schizophrenia, probe underlying neural circuits, and help explain functional outcome. To identify and compare regional brain activity associated with one form of visual masking (ie, backward masking) in schizophrenic patients and healthy controls. Subjects received functional magnetic resonance imaging scans. While in the scanner, subjects performed a backward masking task and were given 3 functional localizer activation scans to identify early visual processing regions of interest (ROIs). University of California, Los Angeles, and the Department of Veterans Affairs Greater Los Angeles Healthcare System. Nineteen patients with schizophrenia and 19 healthy control subjects. Main Outcome Measure The magnitude of the functional magnetic resonance imaging signal during backward masking. Two ROIs (lateral occipital complex [LO] and the human motion selective cortex [hMT+]) showed sensitivity to the effects of masking, meaning that signal in these areas increased as the target became more visible. Patients had lower activation than controls in LO across all levels of visibility but did not differ in other visual processing ROIs. Using whole-brain analyses, we also identified areas outside the ROIs that were sensitive to masking effects (including bilateral inferior parietal lobe and thalamus), but groups did not differ in signal magnitude in these areas. The study results support a key role in LO for visual masking, consistent with previous studies in healthy controls. The current results indicate that patients fail to activate LO to the same extent as controls during visual processing regardless of stimulus visibility, suggesting a neural basis for the visual masking deficit, and possibly other visual integration deficits, in schizophrenia.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

46 CFR 197.322 - Surface-supplied helmets and masks.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Surface-supplied helmets and masks. 197.322 Section 197... helmets and masks. (a) Each surface-supplied helmet or mask must have— (1) A nonreturn valve at the attachment point between helmet or mask and umbilical that closes readily and positively; (2) An exhaust...

Extension of optical lithography by mask-litho integration with computational lithography

NASA Astrophysics Data System (ADS)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Individual differences in metacontrast masking regarding sensitivity and response bias.

PubMed

Albrecht, Thorsten; Mattler, Uwe

2012-09-01

In metacontrast masking target visibility is modulated by the time until a masking stimulus appears. The effect of this temporal delay differs across participants in such a way that individual human observers' performance shows distinguishable types of masking functions which remain largely unchanged for months. Here we examined whether individual differences in masking functions depend on different response criteria in addition to differences in discrimination sensitivity. To this end we reanalyzed previously published data and conducted a new experiment for further data analyses. Our analyses demonstrate that a distinction of masking functions based on the type of masking stimulus is superior to a distinction based on the target-mask congruency. Individually different masking functions are based on individual differences in discrimination sensitivities and in response criteria. Results suggest that individual differences in metacontrast masking result from individually different criterion contents. Copyright © 2012 Elsevier Inc. All rights reserved.

Development of EUV mask handling technology at MIRAI-Selete

NASA Astrophysics Data System (ADS)

Ota, Kazuya; Amemiya, Mitsuaki; Taguchi, Takao; Kamono, Takashi; Kubo, Hiroyoshi; Takikawa, Tadahiko; Usui, Yoichi; Suga, Osamu

2007-03-01

We, MIRAI-Selete, started a new EUV mask program in April, 2006. Development of EUV mask handling technology is one of the key areas of the program. We plan to develop mask handling technology and to evaluate EUV mask carriers using Lasertec M3350, a particle inspection tool with the defect sensitivity less than 50nm PSL, and Mask Protection Engineering Tool (named "MPE Tool"). M3350 is a newly developed tool based on a conventional M1350 for EUV blanks inspection. Since our M3350 has a blank flipping mechanism in it, we can inspect the front and the back surface of the blank automatically. We plan to use the M3350 for evaluating particle adders during mask shipping, storage and handling. MPE Tool is a special tool exclusively developed for demonstration of pellicleless mask handling. It can handle a mask within a protective enclosure, which Canon and Nikon have been jointly proposing1, and also, can be modified to handle other type of carrier as the need arises.

An investigation into the efficiency of disposable face masks.

PubMed Central

Rogers, K B

1980-01-01

Disposable face masks used in hospitals have been assessed for the protection afforded the patient and the wearer by challenges of simulated natural conditions of stress. Operating theatre masks made of synthetic materials allow the wearer to breathe through the masks, and these have been shown to protect the patient well but the wearer slightly less. Cheaper paper masks are worn for ward duties, and of these only the Promask protected in area in front of the wearer: air does not pass through this mask, expired air is prevented from passing forward, and the wearer breathes unfiltered air. All the other paper masks tested allowed many bacteria-laden particles to pass through them. PMID:7440756

Face mask ventilation--the dos and don'ts.

PubMed

Wood, Fiona E; Morley, Colin J

2013-12-01

Face mask ventilation provides respiratory support to newly born or sick infants. It is a challenging technique and difficult to ensure that an appropriate tidal volume is delivered because large and variable leaks occur between the mask and face; airway obstruction may also occur. Technique is more important than the mask shape although the size must appropriately fit the face. The essence of the technique is to roll the mask on to the face from the chin while avoiding the eyes, with a finger and thumb apply a strong even downward pressure to the top of the mask, away from the stem and sloped sides or skirt of the mask, place the other fingers under the jaw and apply a similar upward pressure. Preterm infants require continuous end-expiratory pressure to facilitate lung aeration and maintain lung volume. This is best done with a T-piece device, not a self-inflating or flow-inflating bag. Copyright © 2013 Elsevier Ltd. All rights reserved.

Performance and stability of mask process correction for EBM-7000

NASA Astrophysics Data System (ADS)

Saito, Yasuko; Chen, George; Wang, Jen-Shiang; Bai, Shufeng; Howell, Rafael; Li, Jiangwei; Tao, Jun; VanDenBroeke, Doug; Wiley, Jim; Takigawa, Tadahiro; Ohnishi, Takayuki; Kamikubo, Takashi; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi

2010-05-01

In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-70001), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm2) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.

Designs and Materials for Better Coronagraph Occulting Masks

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham

2010-01-01

New designs, and materials appropriate for such designs, are under investigation in an effort to develop coronagraph occulting masks having broad-band spectral characteristics superior to those currently employed. These designs and materials are applicable to all coronagraphs, both ground-based and spaceborne. This effort also offers potential benefits for the development of other optical masks and filters that are required (1) for precisely tailored spatial transmission profiles, (2) to be characterized by optical-density neutrality and phase neutrality (that is, to be characterized by constant optical density and constant phase over broad wavelength ranges), and/or (3) not to exhibit optical- density-dependent phase shifts. The need for this effort arises for the following reasons: Coronagraph occulting masks are required to impose, on beams of light transmitted through them, extremely precise control of amplitude and phase according to carefully designed transmission profiles. In the original application that gave rise to this effort, the concern has been to develop broad-band occulting masks for NASA s Terrestrial Planet Finder coronagraph. Until now, experimental samples of these masks have been made from high-energy-beam-sensitive (HEBS) glass, which becomes locally dark where irradiated with a high-energy electron beam, the amount of darkening depending on the electron-beam energy and dose. Precise mask profiles have been written on HEBS glass blanks by use of electron beams, and the masks have performed satisfactorily in monochromatic light. However, the optical-density and phase profiles of the HEBS masks vary significantly with wavelength; consequently, the HEBS masks perform unsatisfactorily in broad-band light. The key properties of materials to be used in coronagraph occulting masks are their extinction coefficients, their indices of refraction, and the variations of these parameters with wavelength. The effort thus far has included theoretical

A respiratory mask for resting and exercising dogs.

PubMed

Stavert, D M; Reischl, P; O'Loughlin, B J

1982-02-01

A respiratory face mask has been developed for use with unsedated beagles trained to run on a treadmill. The latex rubber mask, shaped to fit the animal's muzzle, incorporates two modified, commercially available, pulmonary valves for separating inspiratory and expiratory flows. The mask has a dead space of 30 cm3 and a flow resistance below 1 cmH2O . 1(-1) . s. The flexible mask is used to measure breath-by-breath respiratory variables over extended periods of time during rest and exercise.

Communication masking in marine mammals: A review and research strategy.

PubMed

Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

2016-02-15

Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Psychometric functions for informational masking

NASA Astrophysics Data System (ADS)

Lutfi, Robert A.; Kistler, Doris J.; Callahan, Michael R.; Wightman, Frederic L.

2003-12-01

The term informational masking has traditionally been used to refer to elevations in signal threshold resulting from masker uncertainty. In the present study, the method of constant stimuli was used to obtain complete psychometric functions (PFs) from 44 normal-hearing listeners in conditions known to produce varying amounts of informational masking. The listener's task was to detect a pure-tone signal in the presence of a broadband noise masker (low masker uncertainty) and in the presence of multitone maskers with frequencies and amplitudes that varied at random from one presentation to the next (high masker uncertainty). Relative to the broadband noise condition, significant reductions were observed in both the slope and the upper asymptote of the PF for multitone maskers producing large amounts of informational masking. Slope was affected more for some listeners and conditions while asymptote was affected more for others; consequently, neither parameter alone was highly predictive of individual thresholds or the amount of informational masking. Mean slopes and asymptotes varied nonmonotonically with the number of masker components in a manner similar to mean thresholds, particularly when the estimated effect of energetic masking on thresholds was subtracted out. As in past studies, the threshold data were well described by a model in which trial-by-trial judgments are based on a weighted sum of levels in dB at the output of independent auditory filters. The psychometric data, however, complicated the model's interpretation in two ways: First, they suggested that, depending on the listener and condition, the weights can either reflect a fixed influence of masker components on each trial or the effect of occasionally mistaking a masker component for the signal from trial to trial. Second, they indicated that in either case the variance of the underlying decision variable as estimated from PF slope is not by itself great enough to account for the observed changes

Forward Masking of the Speech-Evoked Auditory Brainstem Response.

PubMed

Hodge, Sarah E; Menezes, Denise C; Brown, Kevin D; Grose, John H

2018-02-01

The hypothesis tested was that forward masking of the speech-evoked auditory brainstem response (sABR) increases peak latency as an inverse function of masker-signal interval (Δt), and that the overall persistence of forward masking is age dependent. Older listeners exhibit deficits in forward masking. If forward-masked sABRs provide an objective measure of the susceptibility of speech sounds to prior stimulation, then this provides a novel approach to examining the age dependence of temporal processing. A /da/ stimulus forward masked by speech-shaped noise (Δt = 4-64 ms) was used to measure sABRs in 10 younger and nine older participants. Forward masking of subsegments of the /da/ stimulus (Δt = 16 ms) and click trains (Δt = 0-64 ms) was also measured. Forward-masked sABRs from young participants showed an increase in latency with decreasing Δt for the initial peak. Latency shifts for later peaks were smaller and more uniform. None of the peak latencies returned to baseline by Δt = 64 ms. Forward-masked /da/ subsegments showed peak latency shifts that did not depend simply on peak position, while forward-masked click trains showed latency shifts that were dependent on click position. The sABRs from older adults were less robust but confirmed the viability of the approach. Forward masking of the sABR provides an objective measure of the susceptibility of the auditory system to prior stimulation. Failure of recovery functions to return to baseline suggests an interaction between forward masking by the prior masker and temporal effects within the stimulus itself.

Stochastic interactions of two Brownian hard spheres in the presence of depletants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karzar-Jeddi, Mehdi; Fan, Tai-Hsi, E-mail: thfan@engr.uconn.edu; Tuinier, Remco

2014-06-07

A quantitative analysis is presented for the stochastic interactions of a pair of Brownian hard spheres in non-adsorbing polymer solutions. The hard spheres are hypothetically trapped by optical tweezers and allowed for random motion near the trapped positions. The investigation focuses on the long-time correlated Brownian motion. The mobility tensor altered by the polymer depletion effect is computed by the boundary integral method, and the corresponding random displacement is determined by the fluctuation-dissipation theorem. From our computations it follows that the presence of depletion layers around the hard spheres has a significant effect on the hydrodynamic interactions and particle dynamicsmore » as compared to pure solvent and uniform polymer solution cases. The probability distribution functions of random walks of the two interacting hard spheres that are trapped clearly shift due to the polymer depletion effect. The results show that the reduction of the viscosity in the depletion layers around the spheres and the entropic force due to the overlapping of depletion zones have a significant influence on the correlated Brownian interactions.« less

Mitigation and control of the overcuring effect in mask projection micro-stereolithography

NASA Astrophysics Data System (ADS)

O'Neill, Paul F.; Kent, Nigel; Brabazon, Dermot

2017-10-01

Mask Projection micro-Stereolithography (MPμSL) is an additive manufacturing technique capable of producing solid parts with micron-scale resolution from a vat of photocurable liquid polymer resin. Although the physical mechanism remains the same, the process differs from traditional laser-galvanometer based stereolithography (SL) in its use of a dynamic mask UV projector, or digital light processor (DLP), which cures each location within each 3D layer at the same time. One area where MPµSL has garnered considerable attention is in the field of microfluidics and Lab-on-a-Chip, where complex multistep microfabrication techniques adopted from the semiconductor industry are still widely used, and where MPµSL offers the ability to fabricate completely encapsulated fluidic channels in a single step and at low cost [1-3]. However, a significant obstacle exists in the prevention of channel blockage due to overcuring of the polymer resin [4, 5]. Overcuring can be attributed to the so-called `back side effect' [2] which occurs during the build process as light from successive layers penetrates into the resin to a depth greater than the layer thickness. This effect is most prevalent in channels or features oriented horizontally (in a parallel plane to that of the build platform). Currently there are two main approaches in controlling the cure depth; 1. the chemical approach, which involves doping the resin material with a chemical light absorber [6-8]; and 2. by improving the system's hardware and optical elements to improve the homogeneity of the light dosage and control the cure depth [9]. Here we investigate a third approach through modification of the 3D CAD file prior to printing to mitigate for UV light leakage from successive build layers. Although used here in conjunction with the MPμSL technique, this approach can be applied to a range of SL techniques to improve printer resolution and enable production of internal features with higher dimensional accuracy.

Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kruse, J. E.; Doundoulakis, G.; Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well asmore » numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.« less

The attentional blink is not affected by backward masking of T2, T2-mask SOA, or level of T2 impoverishment.

PubMed

Jannati, Ali; Spalek, Thomas M; Lagroix, Hayley E P; Di Lollo, Vincent

2012-02-01

Identification of the second of two targets (T2) is impaired when presented shortly after the first (T1). This attentional blink (AB) is thought to arise from a delay in T2 processing during which T2 is vulnerable to masking. Conventional studies have measured T2 accuracy which is constrained by the 100% ceiling. We avoided this problem by using a dynamic threshold-tracking procedure that is inherently free from ceiling constraints. In two experiments we examined how AB magnitude is affected by three masking-related factors: (a) presence/absence of T2 mask, (b) T2-mask stimulus onset asynchrony (SOA), and (c) level of T2 impoverishment (signal-to-noise ratio [SNR]). In Experiment 1, overall accuracy decreased with T2-mask SOA. The magnitude of the AB, however, was invariant with SOA and with mask presence/absence. Experiment 2 further showed that the AB was invariant with T2 SNR. The relationship among mask presence/absence, SOA, and T2 SNR and the AB is encompassed in a qualitative model.

Manufacture of a conformal multilayer rf antenna substrate using excimer mask imaging technology and a 6-axis robot

NASA Astrophysics Data System (ADS)

Charrier, Michel; Everett, Daniel; Fieret, Jim; Karrer, Tobias; Rau, Sven; Valard, Jean-Luc

2001-06-01

A novel method is presented to produce a high precision pattern of copper tracks on both sides of a 4-layer conformal radar antenna made of PEI polymer and shaped as a truncated pseudo-parabolic cylinder. The antenna is an active emitter-receiver so that an accuracy of a fraction of the wavelength of the microwave radiation is required. After 2D layer design in Allegro, the resulting Gerber file-format circuits are wrapped around the antenna shape, resulting in a cutter-path file which provides the input for a postprocessor that outputs G-code for robot- and laser control. A rules file contains embedded information such as laser parameters and mask aperture related to the Allegro symbols. The robot consists of 6 axes that manipulate the antenna, and 2 axes for the mask plate. The antenna can be manipulated to an accuracy of +/- 20 micrometers over its full dimensions of 200x300x50 mm. The four layers are constructed by successive copper coating, resist coating, laser ablation, copper etching, resist removal, insulation polyimide film lamination and laser dielectric drilling for microvia holes and through-holes drilling. Applications are in space and aeronautical communication and radar detection systems, with possible extensions to automotive and mobile hand-sets, and land stations.

Fast synthesis of topographic mask effects based on rigorous solutions

NASA Astrophysics Data System (ADS)

Yan, Qiliang; Deng, Zhijie; Shiely, James

2007-10-01

Topographic mask effects can no longer be ignored at technology nodes of 45 nm, 32 nm and beyond. As feature sizes become comparable to the mask topographic dimensions and the exposure wavelength, the popular thin mask model breaks down, because the mask transmission no longer follows the layout. A reliable mask transmission function has to be derived from Maxwell equations. Unfortunately, rigorous solutions of Maxwell equations are only manageable for limited field sizes, but impractical for full-chip optical proximity corrections (OPC) due to the prohibitive runtime. Approximation algorithms are in demand to achieve a balance between acceptable computation time and tolerable errors. In this paper, a fast algorithm is proposed and demonstrated to model topographic mask effects for OPC applications. The ProGen Topographic Mask (POTOMAC) model synthesizes the mask transmission functions out of small-sized Maxwell solutions from a finite-difference-in-time-domain (FDTD) engine, an industry leading rigorous simulator of topographic mask effect from SOLID-E. The integral framework presents a seamless solution to the end user. Preliminary results indicate the overhead introduced by POTOMAC is contained within the same order of magnitude in comparison to the thin mask approach.

Aerial image metrology for OPC modeling and mask qualification

NASA Astrophysics Data System (ADS)

Chen, Ao; Foong, Yee Mei; Thaler, Thomas; Buttgereit, Ute; Chung, Angeline; Burbine, Andrew; Sturtevant, John; Clifford, Chris; Adam, Kostas; De Bisschop, Peter

2017-06-01

As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OPC, the mask pattern complexity increases. CD-SEM based mask qualification strategies as they are used today are starting to struggle to provide a precise forecast of the printing behavior of a mask on wafer. An aerial image CD measurement performed on ZEISS Wafer-Level CD system (WLCD) is a complementary approach to mask CD-SEMs to judge the lithographical performance of the mask and its critical production features. The advantage of the aerial image is that it includes all optical effects of the mask such as OPC, SRAF, 3D mask effects, once the image is taken under scanner equivalent illumination conditions. Additionally, it reduces the feature complexity and analyzes the printing relevant CD.

Masking the Feeling of Being Stupid.

ERIC Educational Resources Information Center

Smith, Sally L.

1988-01-01

Teaching experience at The Lab School of Washington has shown that learning-disabled children and adults cope with their lack of self-esteem and feelings of stupidity by developing masks to hide their hurt. These include masks of super-competence, helplessness, invisibility, clowning, injustice collecting, indifference, boredom, outrageousness,…

Strategy optimization for mask rule check in wafer fab

NASA Astrophysics Data System (ADS)

Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

2015-07-01

Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

X Ray Mask Of Gold-Carbon Mixture Absorber On BCN Compound Substrate Fabricated By Plasma Processes

NASA Astrophysics Data System (ADS)

Aiyer, Chandrasekhar R.; Itoh, Satoshi; Yamada, Hitomi; Morita, Shinzo; Hattori, Shuzo

1988-06-01

X-ray mask fabrication based on BCN compound membrane and gold containing polymeric carbon ( Au-C ) absorber by totally dry processes is proposed. The Au-C films were depo-sited by plasma polymerization of propylene or styrene monomers and co-evaporation of gold. These films have 2 to 5 times higher etching rate than that of pure gold for 09 RIE, depending on the Au content. The stress in the films could be reduced to 1.9 E 7 N/m2 by annealing. The BCN films were deposited on silicon wafers by rf (13.56 MHz) plasma CVD with diborane, methane and nitrogen as source gases at typical deposition rate of 30 nm/min. The optical (633nm) and X ray (Pd L~) transparencies were nearly 80% for film thickness of 6 um. Patterning of Au-C was achieved by using tungsten as intermediate layer and PMMA electron beam resist. CF4 RIE was used to etch the tungsten layer which in turn acted as mask for the gold carbide 02 RIE. The process parameters and the characteristics of the Au-C and BCN films are presented.

New method of contour-based mask-shape compiler

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

2007-10-01

We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

In collaboration with mask suppliers for change management enhancement

NASA Astrophysics Data System (ADS)

Deng, Erwin; Lee, Chun Der; Lee, Rachel

2013-06-01

For those wafer fabs that have no their own maskshops, the main target of mask quality department is to gain stable mask quality performance through effective supplier management, and therefore achieves competitive business results. After dealing with lots of mask data preparation (MDP) quality problems with suppliers, we have found that incomplete change management procedures are one of major sources that induce incorrect mask data for writing. This article will share our experience in how to enhance change management flows with mask suppliers together and will also show the utility after a series of flow improvement actions.

Developing a New Quantitative Account of Backward Masking

ERIC Educational Resources Information Center

Francis, Gregory

2003-01-01

A new general explanation for u-shaped backward masking is analyzed and found to predict shifts in the interstimulus interval (ISI) that produces strongest masking. This predicted shift is then compared to six sets of masking data. The resulting comparisons force the general explanation to make certain assumptions to account for the data. In this…

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Active membrane masks for improved overlay performance in proximity lithography

NASA Astrophysics Data System (ADS)

Huston, Dryver R.; Plumpton, James; Esser, Brian; Sullivan, Gerald A.

2004-07-01

Membrane masks are thin (2 micron x 35 mm x 35 mm) structures that carry the master exposure patterns in proximity (X-ray) lithography. With the continuous drive to the printing of ever-finer features in microelectronics, the reduction of mask-wafer overlay positioning errors by passive rigid body positioning and passive stress control in the mask becomes impractical due to nano and sub-micron scale elastic deformations in the membrane mask. This paper describes the design, mechanics and performance of a system for actively stretching a membrane mask in-plane to control overlay distortion. The method uses thermoelectric heating/cooling elements placed on the mask perimeter. The thermoelectric elements cause controlled thermoelastic deformations in the supporting wafer, which in turn corrects distortions in the membrane mask. Silicon carbide masks are the focus of this study, but the method is believed to be applicable to other mask materials, such as diamond. Experimental and numerical results will be presented, as well as a discussion of the design issues and related design decisions.

Masking interrupts figure-ground signals in V1.

PubMed

Lamme, Victor A F; Zipser, Karl; Spekreijse, Henk

2002-10-01

In a backward masking paradigm, a target stimulus is rapidly (<100 msec) followed by a second stimulus. This typically results in a dramatic decrease in the visibility of the target stimulus. It has been shown that masking reduces responses in V1. It is not known, however, which process in V1 is affected by the mask. In the past, we have shown that in V1, modulations of neural activity that are specifically related to figure-ground segregation can be recorded. Here, we recorded from awake macaque monkeys, engaged in a task where they had to detect figures from background in a pattern backward masking paradigm. We show that the V1 figure-ground signals are selectively and fully suppressed at target-mask intervals that psychophysically result in the target being invisible. Initial response transients, signalling the features that make up the scene, are not affected. As figure-ground modulations depend on feedback from extrastriate areas, these results suggest that masking selectively interrupts the recurrent interactions between V1 and higher visual areas.