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Sample records for heavily fluorine doped

  1. Charge neutrality in heavily doped emitters

    SciTech Connect

    del Alamo, J.A.

    1981-09-01

    The applicability of the quasineutrality approximation to modern emitters of solar cells is analytically reviewed. It is shown that this approximation is fulfilled in more than 80% of the depth of a typical solar-cell emitter, being particularly excellent in the heavily doped regions beneath the surface where most of the heavy doping effects arise. Our conclusions are in conflict with Redfield's recent affirmations.

  2. Heavily doped polysilicon-contact solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  3. Heavily Doped PBSE with High Thermoelectric Performance

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Wang, Heng (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT (is) greater than 1.3 was observed when n(sub H) approximately 1.0 X 10(exp 20) cm(exp -3). The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.

  4. Heavily doped polysilicon-contact solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  5. Superconductivity in heavily boron-doped silicon carbide

    PubMed Central

    Kriener, Markus; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru

    2008-01-01

    The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility. PMID:27878022

  6. Fluorine compounds for doping conductive oxide thin films

    DOEpatents

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  7. Transit time and charge storage measurements in heavily doped emitters

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Park, J. S.; Hwang, B. Y.

    1986-01-01

    A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

  8. Transit time and charge storage measurements in heavily doped emitters

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Park, J. S.; Hwang, B. Y.

    1986-01-01

    A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

  9. Oxygen precipitation behavior in heavily arsenic doped silicon crystals

    NASA Astrophysics Data System (ADS)

    Haringer, Stephan; Gambaro, Daniela; Porrini, Maria

    2017-01-01

    Silicon crystals containing different levels of arsenic concentration and oxygen content were grown, and samples were taken at various positions along the crystal, to study the influence of three main factors, i.e. the initial oxygen content, the dopant concentration and the thermal history, on the nucleation of oxygen precipitates during crystal growth and cooling in the puller. The crystal thermal history was reconstructed by means of computer modeling, simulating the temperature distribution in the crystal at several growth stages. The oxygen precipitation was characterized after a thermal cycle of 4 h at 800 °C for nuclei stabilization +16 h at 1000 °C for nuclei growth. Oxygen precipitates were counted under microscope on the cleaved sample surface after preferential etching. Lightly doped silicon samples were also included, as reference. Our results show that even in heavily arsenic doped silicon the oxygen precipitation is a strong function of the initial oxygen concentration, similar to what has been observed for lightly doped silicon. In addition, a precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7×1019 cm-3 compared to lightly doped samples with the same initial oxygen content and crystal thermal history. Finally, a long permanence time of the crystal in the temperature range between 450 °C and 750 °C enhances the oxygen precipitation, showing that this is an effective temperature range for oxygen precipitation nucleation in heavily arsenic doped silicon.

  10. Improved thermoelectric properties in heavily doped FeGa3

    NASA Astrophysics Data System (ADS)

    Ponnambalam, V.; Morelli, Donald T.

    2015-12-01

    FeGa3, a hybridization gap semiconductor, has been substituted with an n-type dopant Ge to form a series of compositions FeGa3-xGex. Electrical and thermal transport properties of these compositions have been studied. Change in carrier density (n) is evident from the Hall measurements. The carrier density (n) can be as high as ˜1021 cm-3 in these compositions. In order to study the role of heavy doping on the thermoelectric properties of FeGa3, an alloy series Fe1-yCoyGa3-xGex has also been synthesized with higher concentrations of Ge (x = 0.1-0.35) and Co (y = 0.1-0.5). From resistivity and Seebeck coefficient measurements, it appears that heavy doping is accomplished by the simultaneous substitutions of Ge and Co. The systematic change in both resistivity (ρ) and Seebeck coefficient (α) is possibly due to change in the carrier density (n). The power factor (PF) α2/ρ improves steadily with increasing carrier density and the best PF ˜1.1 mW/m K2 is observed for the heavily doped compositions at 875 K. In the alloy series Fe1-yCoyGa3-xGex, thermal conductivity is also reduced substantially due to point defect scattering. Due to higher power factors, the figure of merit ZT improves to 0.25 at 875 K for the heavily doped compositions.

  11. Boron transient enhanced diffusion in heavily phosphorus doped silicon

    SciTech Connect

    Huang, M.B.; Myler, U.; Simpson, T.W.; Simpson, P.J.; Mitchell, I.V.

    1997-11-01

    A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

  12. Amplifying properties of heavily erbium-doped active fibres

    SciTech Connect

    Plotskii, A Yu; Kurkov, Andrei S; Yashkov, M Yu; Bubnov, M M; Likhachev, M E; Sysolyatin, A A; Dianov, Evgenii M; Gur'yanov, A N

    2005-06-30

    The relative concentration of erbium ions undergoing nonradiative relaxation from the metastable to the ground level is measured in aluminosilicate glass fibres doped with erbium ions at concentration between 3x10{sup 18} and 10{sup 20} cm{sup -3}. The dependence of the fraction of such ions on the Er{sup 3+} concentration is determined for fibres containing different amounts of aluminium oxide in a core. It is shown that the fraction of erbium ions not involved in amplification substantially decreases with increasing the Al{sub 2}O{sub 3} concentration. It is found that clustering leads to a considerable decrease in the gain in heavily Er{sup 3+}-doped active fibres. The dependence of the quantum efficiency of a fibre amplifier on the erbium ion concentration is obtained based on the measurements performed. This dependence can be used for optimising the parameters of erbium-doped fibre amplifiers. (fibres. integrated-optic waveguides)

  13. Measurement of surface recombination velocity on heavily doped indium phosphide

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Ghalla-Goradia, Manju; Faur, Mircea; Faur, Maria; Bailey, Sheila

    1990-01-01

    Surface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec.

  14. Measurement of surface recombination velocity on heavily doped indium phosphide

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Ghalla-Goradia, Manju; Faur, Mircea; Faur, Maria; Bailey, Sheila

    1990-01-01

    Surface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec.

  15. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  16. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  17. Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swirhun, S. E.; Swanson, R. M.

    1986-01-01

    Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

  18. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  19. Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

    NASA Astrophysics Data System (ADS)

    Lambert, Y.; Gao, Y.; Pi, X. D.; Grandidier, B.; Stiévenard, D.

    2017-09-01

    We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of 15% is found for the incorporated P impurities in the NCs.

  20. Measurement of minority carrier transport parameters in heavily doped n-type silicon

    NASA Technical Reports Server (NTRS)

    Delalamo, J.; Swanson, R. M.

    1985-01-01

    Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region.

  1. Thermophotovoltaic energy conversion system having a heavily doped n-type region

    DOEpatents

    DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

    2000-01-01

    A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

  2. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    SciTech Connect

    Torigoe, Kazuhisa Fujise, Jun; Ono, Toshiaki; Nakamura, Kozo

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  3. Determination of surface recombination velocity in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Watanabe, M.; Gatos, H. C.; Actor, G.

    1976-01-01

    A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

  4. Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection

    NASA Astrophysics Data System (ADS)

    Ašmontas, S.; Gradauskas, J.; Kozič, A.; Shtrikmann, H.; Sužiedėlis, A.

    2005-01-01

    Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n+ junctions was observed experimentally in Ka frequency range, which coincides well with theoretical predictions.

  5. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    NASA Astrophysics Data System (ADS)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  6. Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effects

    NASA Astrophysics Data System (ADS)

    Serre, J.; Ghazali, A.; Hugon, P. Leroux

    1981-02-01

    Using a self-consistent multiple-scattering method, we estimate the relative importance of both effects of scattering and of impurity-concentration fluctuations on band states in heavily doped semiconductors and thus we account for band tailing. We apply this formalism to the estimate of the interband absorption spectrum in a typical case, in satisfactory agreement with experiment.

  7. Comparison of the thermal degradation of heavily Nb-doped and normal PZT thin films.

    PubMed

    Yang, Jeong-Suong; Kang, Yunsung; Kang, Inyoung; Lim, Seungmo; Shin, Seung-Joo; Lee, Jungwon; Hur, Kangheon

    2017-01-04

    The degradation of Niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, 2-step PZT and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary (MPB) were in-situ deposited under optimum condition by RF-magnetron sputtering. All 2 μm thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiOx bottom electrode on Si wafer, and Nb doped PZT thin film was on Ir/TiW electrode with help of orientation control. Sputtered PZT films formed on MEMS gyroscope, and the degradation rates were compared at different temperatures. Nb-doped PZT showed the best resistance to the thermal degradation, followed by 2-step PZT. To clarify the effect of oxygen vacancies for the degradation of the film at high temperature, photo-luminescence (PL) measurement was conducted. It confirmed that oxygen vacancy rate was the lowest in heavily Nb-doped PZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed Nb-doped PZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of micro-electromechanical system (MEMS) packaging.

  8. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  9. Temperature-independent spin relaxation in heavily doped n -type germanium

    NASA Astrophysics Data System (ADS)

    Fujita, Y.; Yamada, M.; Yamada, S.; Kanashima, T.; Sawano, K.; Hamaya, K.

    2016-12-01

    We experimentally study the spin relaxation mechanism in heavily doped n -type germanium (Ge) layers by electrically detecting pure spin current transport. The spin diffusion length (λGe) in heavily doped n -type Ge layers at 125 K is less than 0.7 μ m , much shorter than that expected in the recent study by Dushenko et al. We find that the spin relaxation time τs is independent of temperature in the range of 8 to 125 K, which can be interpreted by the recent theory by Song et al. This study clarifies that the spin-relaxation mechanism at low temperatures in degenerate Ge is dominated by extrinsic scattering with impurities.

  10. Magnetic properties of fluorinated Pb-doped Hg-1223 high Tc superconductors

    SciTech Connect

    Hamdan, N.M.; Sastry, P.V.P.S.S.; Schwartz, J.

    2001-09-23

    Fluorination of Pb-doped HgBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub y} (Hg-1223) system was investigated. Structural and magnetic measurements reveal that fluorine addition promotes the phase formation, optimize the charge carrier concentration, and enhance flux pinning. We report an increase in both the transition temperature and the critical current density through controlled fluorine incorporation. Even a possible change in the pinning mechanism in this technologically important system is suggested.

  11. Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters

    SciTech Connect

    Wu, A.; Schrimpf, R.D.; Pease, R.L.; Fleetwood, D.M.; Kosier, S.L.

    1997-06-01

    Ionizing radiation may cause failures in ICs due to gain degradation of individual devices. The base current of irradiated bipolar devices increases with total dose, while the collector current remains relatively constant. This results in a decrease in the current gain. Lateral PNP (LPNP) transistors typically exhibit more degradation than vertical PNP devices at the same total dose, and have been blamed as the cause of early IC failures at low dose rates. It is important to understand the differences in total-dose response between devices with heavily- and lightly-doped emitters in order to compare different technologies and evaluate the applicability of proposed low-dose-rate hardness-assurance methods. This paper addresses these differences by comparing two different LPNP devices from the same process: one with a heavily-doped emitter and one with a lightly-doped emitter. Experimental results demonstrate that the lightly-doped devices are more sensitive to ionizing radiation and simulations illustrate that increased recombination on the emitter side of the junction is responsible for the higher sensitivity.

  12. Dual Effect in Fluorine-Doped Hematite Nanocrystals for Efficient Water Oxidation.

    PubMed

    Xie, Junfeng; Liu, Weiwei; Xin, Jianping; Lei, Fengcai; Gao, Li; Qu, Haichao; Zhang, Xiaodong; Xie, Yi

    2017-08-12

    Herein, excellent light absorption and oxygen-evolving activity were simultaneously achieved by doping fluorine anions into hematite nanocrystals. Upon anion doping, the band structure of hematite can be effectively regulated, leading to the generation of defect levels between the band gap and remarkably increased visible light absorption. The activity for electrocatalytic oxygen evolution reaction (OER) of the hematite nanocrystals is enhanced after fluorine doping, where the doped hematite assists as an effective catalyst for photoelectrochemical water splitting. The optimization strategy proposed herein may shed light on the future design of photocatalysts for energy-related applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  14. Preparation, characterization and electrical properties of fluorine-doped tin dioxide nanocrystals.

    PubMed

    Wu, Shanshan; Yuan, Shuai; Shi, Liyi; Zhao, Yin; Fang, Jianhui

    2010-06-01

    Fluorine-doped tin dioxide (FTO) nanocrystals were prepared with a sol-gel process followed by a hydrothermal treatment using SnCl(4) and NH(4)F as SnO(2) and fluorine dopant, respectively. The nanostructure and composition were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), zeta potential analysis, electrochemical measurement technology and X-ray photoelectron spectroscopy (XPS) respectively. The diameter of the fluorine doped SnO(2) nanocrystal in rutile-type structure is about 10nm. Compared to the pure SnO(2) nanocrystals, the fluorine doped SnO(2) nanocrystals can be dispersed homogeneously in H(2)O, forming transparent sol with high stability. The powder of fluorine doped SnO(2) nanocrystals could be obtained by removing the solvent, and the electrical resistivity properties were measured by a four-point probe measurement. The results show that sheet resistances (Rs) of fluorine doped SnO(2) decrease with the increasing NH(4)F/Sn molar ratio in the range from 0 to 2. However, further increase of NH(4)F/Sn molar ratio from 2 to 5 leads to higher sheet resistance. The F/Sn molar ratio of fluorine doped SnO(2) measured by XPS is about 0.18 when NH(4)F/Sn molar ratio is equal to 2, and the sheet resistance of fluorine doped SnO(2) powder is 110Ω/□.

  15. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    NASA Astrophysics Data System (ADS)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  16. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films.

    PubMed

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B J; Kim, Changyoung; Seo, S S A; Lee, Suyoun

    2016-10-05

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

  17. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

    2016-10-01

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

  18. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

    PubMed Central

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

    2016-01-01

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices. PMID:27703222

  19. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    SciTech Connect

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  20. Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs

    NASA Astrophysics Data System (ADS)

    Paquette, Bernard; Ilahi, Bouraoui; Aimez, Vincent; Arès, Richard

    2013-11-01

    The surface morphology and incorporation behavior of heavily Te-doped GaAs were studied for various growth parameters by chemical beam epitaxy (CBE). The Te precursor, DIPTe (diisopropyl telluride), acts as a volatile dopant in the growth temperature range of 475-595 °C. Electrical activation of Te is increased for lower growth temperatures. The Te surfactant effect was shown to lead to three-dimensional growth, which greatly affected the resulting surface morphology. We have shown that growth parameters can be tuned to reduce the Te surfactant effect through kinetic limitation, thus obtaining improved surface morphologies.

  1. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon

    NASA Astrophysics Data System (ADS)

    Torigoe, Kazuhisa; Ono, Toshiaki

    2017-06-01

    The enhanced diffusion of boron has been investigated by analyzing out-diffusion profiles in the vicinity of the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate with a resistivity of 8.2 mΩ cm and an oxide precipitate (O.P.) density of 108-1010 cm-3. It is found that the boron diffusion during annealing at 850-1000 °C is enhanced with the increase of the oxide precipitate density. On the basis of a model for boron diffusion mediated by silicon self-interstitials, we reveal that the enhanced diffusion is attributed to self-interstitials supersaturated as a result of the emission from oxide precipitates and the absorption by punched-out dislocations. In addition, the temperature dependence of the fraction of the self-interstitial emission obtained analyzing the diffusion enhancement well explains the morphology changes of oxide precipitates reported in literature.

  2. Electronic properties of single-crystal diamonds heavily doped with boron

    SciTech Connect

    Buga, S. G.; Blank, V. D.; Terent'ev, S. A.; Kuznetsov, M. S.; Nosukhin, S. A.; Kulbachinskii, V. A. Krechetov, A. V.; Kytin, V. G.; Kytin, G. A.

    2007-04-15

    Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.

  3. Infrared absorption and visible transparency in heavily doped p-type BaSnO3

    NASA Astrophysics Data System (ADS)

    Li, Yuwei; Sun, Jifeng; Singh, David J.

    2017-01-01

    The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.

  4. Valence band structures of heavily doped strained GexSi1 - x layers

    NASA Astrophysics Data System (ADS)

    Fu, Y.; Jain, S. C.; Willander, M.; Loferski, J. J.

    1993-07-01

    Valence-band structure and density-of-state (DOS) effective mass are calculated for heavily p-type-doped Si and strained GexSi1-x layers grown on (100) Si. At low doping values calculations have been made by earlier authors and the results agree with the published values of DOS mass by these authors. The Fermi energy EF measured from the valence-band edge has been calculated using our values of DOS effective mass. At 1020 cm-3 doping level the value is 77.3 meV compared with 80 meV determined from luminescence experiments. The value of EF obtained by using the normally accepted value of 0.57 for the hole effective mass in Si is more than the experimental value by a factor about 2, i.e., the calculations reduce the discrepancy from 100% to less than 4%. The effective barrier height of (p+-Ge0.42Si0.58)/(p-Si) internal photoemission photo detector has also been calculated using our calculated value of the DOS hole mass. The calculated value is in reasonable agreement with the experimental value. The values of the band parameters and of deformation potentials are known only for small values of k and energies. These values have been used at large doping concentrations where k and energy are also large. The agreement of the theory with experiment suggests that the values of the parameters are valid approximately at higher energies also.

  5. Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.

    PubMed

    Alphazan, Thibault; Díaz Álvarez, Adrian; Martin, François; Grampeix, Helen; Enyedi, Virginie; Martinez, Eugénie; Rochat, Névine; Veillerot, Marc; Dewitte, Marc; Nys, Jean-Philippe; Berthe, Maxime; Stiévenard, Didier; Thieuleux, Chloé; Grandidier, Bruno

    2017-06-14

    Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10(20) cm(-3). Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

  6. A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.

    1991-01-01

    A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

  7. The impact of donors on recombination mechanisms in heavily doped Ge/Si layers

    NASA Astrophysics Data System (ADS)

    Barget, Michael R.; Virgilio, Michele; Capellini, Giovanni; Yamamoto, Yuji; Schroeder, Thomas

    2017-06-01

    Heavy n-type doping has been proposed as a route to achieve positive optical gain in germanium layers since it is supposed to enhance the Γc carrier density. Nevertheless, the impact of donor impurities on the excess carrier lifetime in heavy doped epitaxial Ge/Si layers has not yet been addressed in the literature. To elucidate this point, we investigate the optical properties of heavily doped Ge layers selectively grown on silicon by means of photoluminescence (PL) experiments and theoretical modelling. A self-consistent multi-valley effective mass numerical model for simulation of PL spectra has been implemented, taking into account the influence of dopants on the non-radiative recombination dynamics. Upon comparing measurements and modelling, we find a linear increase in the defect-related Shockley-Read-Hall (SRH) recombination rate as a function of the donor density. The non-radiative lifetime decreases from ˜30 ns in intrinsic Ge/Si samples to ˜0.1 ns for a doping density in the 1019 cm-3 range. As a consequence, we find that SRH is the dominant non-radiative recombination process up to a donor density of ˜5 × 1019 cm-3. Despite this reduced lifetime, we observe an overall positive impact of doping on the radiative recombination rate for donor densities up to an "optimal" value of ˜3 × 1019 cm-3, with a ×7 intensity enhancement compared to the intrinsic case. A further increase in the donor concentration brings about a worsening of the optical emission.

  8. Synthesis of fluorine-doped α-Fe2O3 nanorods toward enhanced lithium storage capability

    NASA Astrophysics Data System (ADS)

    Wang, Chundong; Zhang, Yi; Li, Yi; Liu, Jiabin; Wu, Qi-Hui; Jiang, Jianjun; Li, Yang Yang; Lu, Jian

    2017-02-01

    Nanostructured fluorine-doped α-Fe2O3 nanorods were synthesized based on a one-step low temperature hydrothermal method. The XPS results verified that fluorine has been successfully incorporated into the hematite lattice. The delivered lithium capacity was effectively improved owing to the fluorine doping comparing with the pristine α-Fe2O3. The increase in electrochemical capacity of fluorine-doped α-Fe2O3 was then studied from the pointviews of nanostructure, electronic properties, and magnetic characteristics.

  9. Mechanism of insulator-to-metal transition in heavily Nb doped anatase TiO2

    NASA Astrophysics Data System (ADS)

    Tao, Junguang; Pan, H.; Wong, Lai Mun; Wong, Ten It; Chai, J. W.; Pan, Jisheng; Wang, S. J.

    2014-03-01

    Heavily Nb-doped anatase TiO2 (TNO) thin films were prepared by pulsed dc magnetron sputtering using an Nb-doped TiO2 target. The as-grown films exhibit high resistivity whose resistance decreases by ˜2 × 104-fold upon vacuum annealing. The ˜40% Nb-doped anatase TiO2 film shows a low resistivity of 5.7 × 10-4 Ω cm and a high electron concentration of 3.07 × 1021 cm-3. Combined in situ x-ray photoelectron spectroscopy (XPS) measurement and density-functional theory (DFT) calculations show that oxygen interstitial (Oint) and Nb interstitial (Nbint) defect clusters introduce localized shallow p-type accepter states that trap the electrons and reduce the conductivity. These defect clusters can be eliminated by vacuum annealing which is companied by outward diffusion of Nb. As a result, the trapped electrons backfill the Ti sites which are delocalized to promote conductivity.

  10. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    SciTech Connect

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  11. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    DOE PAGES

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; ...

    2015-01-20

    REBa2Cu3Ox superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (Jc) above 20 MA/cm2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher thanmore » the Jc typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m3 have also been attained at 20 K. A composition map of lift factor in Jc (ratio of Jc at 30 K, 3 T to the Jc at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 × 1011 cm–2 as well as 2–3nm sized particles rich in Cu and Zr have been found in the high Jc films.« less

  12. Synthesis, characterization and photocatalytic activity of fluorine doped TiO2 nanoflakes synthesized using solid state reaction method.

    PubMed

    Umadevi, M; Parimaladevi, R; Sangari, M

    2014-01-01

    Fluorine doped TiO2 were synthesized by solid state reaction method. Optical and structural properties of fluorine doped TiO2 were investigated by X-ray diffraction, Fourier transform infrared spectroscopy, UV-vis diffusion reflectance spectroscopy and scanning electron microscopic techniques. The prepared fluorine doped TiO2 was smaller in size with respect to pure TiO2 and it is tetragonal in crystalline structure. Nanoflakes like structure of pure and fluorine doped TiO2 was confirmed from SEM image. Fluorine doped TiO2 shows smaller band gap, high strain and dislocation density when compared to pure TiO2. It also has higher photocatalytic activity with respect to pure TiO2.

  13. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    NASA Astrophysics Data System (ADS)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  14. Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs

    NASA Astrophysics Data System (ADS)

    Dutta, Pradipta; Syamal, Binit; Koley, Kalyan; Dutta, Arka; Sarkar, C. K.

    2017-08-01

    The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrier lowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model also incorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily / lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCAD simulations, with a relative error of around 3-7%.

  15. Absence of superconductivity in fluorine-doped neptunium pnictide NpFeAsO

    NASA Astrophysics Data System (ADS)

    Walters, A. C.; Walker, H. C.; Springell, R.; Krisch, M.; Bosak, A.; Hill, A. H.; Zvorişte-Walters, C. E.; Colineau, E.; Griveau, J.-C.; Bouëxière, D.; Eloirdi, R.; Caciuffo, R.; Klimczuk, T.

    2015-08-01

    X-ray diffraction, specific heat, magnetic susceptibility and inelastic x-ray scattering measurements on the transurarium oxypnictides NpFeAsO and NpFeAsO0.85F0.15 are presented. No superconductivity down to 2 K was observed upon fluorine doping, contrary to the structurally analogous rare-earth pnictides. No modification of the phonon density of states was observed upon doping with fluorine. We discuss our results in light of the latest experimental and theoretical studies on the role of phonons in the superconducting pnictide compounds.

  16. Absence of superconductivity in fluorine-doped neptunium pnictide NpFeAsO.

    PubMed

    Walters, A C; Walker, H C; Springell, R; Krisch, M; Bosak, A; Hill, A H; Zvorişte-Walters, C E; Colineau, E; Griveau, J-C; Bouëxière, D; Eloirdi, R; Caciuffo, R; Klimczuk, T

    2015-08-19

    X-ray diffraction, specific heat, magnetic susceptibility and inelastic x-ray scattering measurements on the transurarium oxypnictides NpFeAsO and NpFeAsO0.85F0.15 are presented. No superconductivity down to 2 K was observed upon fluorine doping, contrary to the structurally analogous rare-earth pnictides. No modification of the phonon density of states was observed upon doping with fluorine. We discuss our results in light of the latest experimental and theoretical studies on the role of phonons in the superconducting pnictide compounds.

  17. Tunable electronic properties of monolayer silicane via fluorine doping: a first-principles study

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Duan, Xiangmei

    2017-07-01

    The electronic structures of fluorine-doped monolayer silicane (F-silicane) are investigated using the density functional theory. We find that the concentration of fluorine has an effect on the electronic properties such as surface work function and energy band structure. The band gap of F-silicane decreases monotonously as the covering percentage of F increases. With favorable formation energy, moderate band gap and appropriate work function, 50% F doped silicane is expected to be a potential candidate for water splitting reaction.

  18. Metal-Mott insulator transition of SrMnO3 by fluorine doping

    NASA Astrophysics Data System (ADS)

    Ramwala, Mohini; Singh, Deobrat; Gupta, Sanjeev K.; Sonvane, Yogesh

    2017-05-01

    We have studied the electronic band structure based metallic properties of a pure cubic SrMnO3 and fluorine doped cubic SrMnO3 peroskite crystal structure which has mott-insulating properties. We also found the stable cubic structure using Generalised Gradient Approximation (GGA) in Perder-Burke-Ernzerhof (PBE) through First-principles calculation. The bond structure of pure SrMnO3 signifies its metallic behavior and that of fluorine doped SrMnO3 show mottness. These materials are of great importance in microelectronics and telecommunication.

  19. Tunable light filtering by a Bragg mirror/heavily doped semiconducting nanocrystal composite.

    PubMed

    Kriegel, Ilka; Scotognella, Francesco

    2015-01-01

    Tunable light filters are critical components for many optical applications in which light in-coupling, out-coupling or rejection is crucial, such as lasing, sensing, photovoltaics and information and communication technology. For this purpose, Bragg mirrors (band-pass filters with high reflectivity) represent good candidates. However, their optical characteristics are determined during the fabrication stage. Heavily doped semiconductor nanocrystals (NCs), on the other hand, deliver a high degree of optical tunability through the active modulation of their carrier density, ultimately influencing their plasmonic absorption properties. Here, we propose the design of an actively tunable light filter composed of a Bragg mirror and a layer of plasmonic semiconductor NCs. We demonstrate that the filtering properties of the coupled device can be tuned to cover a wide range of frequencies from the visible to the near infrared (vis-NIR) spectral region when employing varying carrier densities. As the tunable component, we implemented a dispersion of copper selenide (Cu2-xSe) NCs and a film of indium tin oxide (ITO) NCs, which are known to show optical tunablility with chemical or electrochemical treatments. We utilized the Mie theory to describe the carrier-dependent plasmonic properties of the Cu2-x Se NC dispersion and the effective medium theory to describe the optical characteristics of the ITO film. The transmission properties of the Bragg mirror have been modelled with the transfer matrix method. We foresee ease of experimental realization of the coupled device, where filtering modulation is achieved upon chemical and electrochemical post-fabrication treatment of the heavily doped semiconductor NC component, eventually resulting in tunable transmission properties of the coupled device.

  20. Tunable light filtering by a Bragg mirror/heavily doped semiconducting nanocrystal composite

    PubMed Central

    Kriegel, Ilka

    2015-01-01

    Summary Tunable light filters are critical components for many optical applications in which light in-coupling, out-coupling or rejection is crucial, such as lasing, sensing, photovoltaics and information and communication technology. For this purpose, Bragg mirrors (band-pass filters with high reflectivity) represent good candidates. However, their optical characteristics are determined during the fabrication stage. Heavily doped semiconductor nanocrystals (NCs), on the other hand, deliver a high degree of optical tunability through the active modulation of their carrier density, ultimately influencing their plasmonic absorption properties. Here, we propose the design of an actively tunable light filter composed of a Bragg mirror and a layer of plasmonic semiconductor NCs. We demonstrate that the filtering properties of the coupled device can be tuned to cover a wide range of frequencies from the visible to the near infrared (vis–NIR) spectral region when employing varying carrier densities. As the tunable component, we implemented a dispersion of copper selenide (Cu2−xSe) NCs and a film of indium tin oxide (ITO) NCs, which are known to show optical tunablility with chemical or electrochemical treatments. We utilized the Mie theory to describe the carrier-dependent plasmonic properties of the Cu2−x Se NC dispersion and the effective medium theory to describe the optical characteristics of the ITO film. The transmission properties of the Bragg mirror have been modelled with the transfer matrix method. We foresee ease of experimental realization of the coupled device, where filtering modulation is achieved upon chemical and electrochemical post-fabrication treatment of the heavily doped semiconductor NC component, eventually resulting in tunable transmission properties of the coupled device. PMID:25671163

  1. Ytterbium-doped all glass leakage channel fibers with highly fluorine-doped silica pump cladding.

    PubMed

    Dong, Liang; McKay, Hugh A; Fu, Libin; Ohta, Michiharu; Marcinkevicius, Andrius; Suzuki, Shigeru; Fermann, Martin E

    2009-05-25

    All glass leakage channel fibers have been demonstrated to be a potential practical solution for power scaling in fiber lasers beyond the nonlinear limits in conventional large mode area fibers. The all glass nature with absence of any air holes is especially useful for allowing the fibers to be used and fabricated much like conventional fibers. Previously, double clad active all glass leakage channel fibers used low index polymer as a pump guide with the drawbacks of being less reliable at high pump powers and not being able to change fiber outer diameter independent of pump guide dimension. In this work, we demonstrate, for the first time, ytterbium-doped double clad all glass leakage channel fibers with highly fluorine-doped silica as pump cladding. The new all glass leakage channel fibers have no polymer in the pump path and have independent control of fiber outer diameters and pump cladding dimension, and, therefore, enable designs with smaller pump guide for high pump absorption and, at the same time, with large fiber diameters to minimize micro and macro bending effects, a much desired features for large core fibers where intermodal coupling can be an issue due to a much increased mode density. An ytterbium-doped double clad PM fiber with core diameter of 80 microm is also reported, which can be coiled in 76 cm diameter coils.

  2. Raman spectra of lithium niobate crystals heavily doped with zinc and magnesium

    NASA Astrophysics Data System (ADS)

    Sidorov, N. V.; Palatnikov, M. N.

    2016-12-01

    We have examined the Raman spectra of heavily doped lithium niobate single crystals (at close-to-threshold concentrations of doping cations): LiNbO3:Zn (4.5 mol % ZnO), LiNbO3:Mg (5.01 mol %):Fe (0.005 mol %), LiNbO3:Mg (5.1 mol %), and LiNbO3:Mg (5.3 mol % MgO). Low-intensity lines with frequencies at 209, 230, 298, 694, and 880 cm-1 have been revealed for the first time. Analysis of the data from the literature on lattice dynamics calculations from first principles (ab initio) does not make it possible to unambiguously state that these lines correspond to fundamental vibrations of the A2 symmetry species, which are forbidden for the C3 V 6 ( R3c) space group. At the same time, ab initio calculations unambiguously indicate that the experimentally observed low-intensity "superfluous" lines with the frequencies at 104 and 119 cm-1 cannot correspond to vibrations of the A2 symmetry species. It is most likely that they correspond to two-particle states of acoustic phonons with a total wave vector equal to zero.

  3. Electrical resistivity, Debye temperature, and connectivity in heavily doped bulk MgB2 superconductors

    NASA Astrophysics Data System (ADS)

    Susner, M. A.; Bhatia, M.; Sumption, M. D.; Collings, E. W.

    2009-05-01

    The measured transport critical current densities, Jc, of MgB2 superconductors fall short of their intrinsic Jcs on account of the grain boundary blockage, sausaging, and porosity seen in most powder-processed wire samples. Hence, it becomes important to understand and to be able to measure the degree of what can be referred to as "connectivity" in order to be able to assess the highest attainable Jc in a given class of samples. In this paper connectivity is determined with the aid of normal state resistivity in an extension of the model originally proposed by Rowell. The normal-state resistivity temperature dependence is fitted to a standard Bloch-Grüneisen (B-G) equation in the range 50-300 K. Such an approach leads not only to a connectivity parameter but also to other useful data: the actual intragrain residual resistivity (indirectly related to the upper critical field) and a resistively determined Debye temperature, θR. The latter quantity, coupled to the transition temperature, Tc, provides a measure (by way of the McMillan formula) of the electron-phonon coupling constant, usually designated λ. The B-G-based connectivity model was applied to our own experimental data on binary and heavily doped MgB2 samples as well as published resistivity data. To complete the study, low temperature specific heat measurements, performed on binary and doped bulk samples provided calorimetrically determined Debye temperatures, θD, for comparison to the resistively determined values and excellent agreement was found. Calorimetric measurements also probed the homogeneity of the doped samples in terms of the roundness of the electronic specific heat jump near Tc.

  4. Selective rapid thermal chemical vapor deposition of titanium silicide on heavily doped silicon

    NASA Astrophysics Data System (ADS)

    Fang, Hua

    The continued scaling of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) increases the need for advanced contact formation technologies that can be used on ultra-shallow source and drain junctions. Titanium silicide (TiSi2) formed by the Self-Aligned Silicide (SALICIDE) technology is widely used in MOSFET fabrication for this purpose. As device feature sizes shrink down to 0.1 mum, however, the SALICIDE technology becomes increasingly incompatible with ultra-shallow junctions because of silicon substrate consumption. For TiSi2, achieving the low resistivity C54 phase on narrow polycrystalline silicon lines (<0.2 mum) is also quite challenging. This work focused on selective rapid thermal chemical vapor deposition (RTCVD) of TiSi2 on heavily-doped single-crystal substrates and polycrystalline films. As the gaseous precursors, SiH4 and TiCl 4 were used. The main objective of this work was to understand the impact of dopants on TiSi2 nucleation and substrate consumption in order to achieve C54-TiSi2 deposition with negligible consumption on heavily doped p- and n-type Si. In this work, TiSi2 deposition was found to be quite sensitive to both dopant type and amount. While boron doping did not interfere with TiSi2 deposition, arsenic introduced a barrier to nucleation and increased substrate consumption. These effects were linked to surface passivation before and during deposition. Arsenic was found to diffuse into the TiSi2 layer maintaining a high surface concentration during deposition. Phosphorus also showed effects similar to arsenic but these effects were much less severe and could be suppressed by raising the process temperature. To suppress the undesirable effects, different pre-deposition surface treatments were considered. The rationale behind these treatments was to remove the arsenic passivated surface layer without giving arsenic atoms the chance to replenish the surface sites. The surface treatments considered were in-situ Cl2 etching and in

  5. Effect of fluorine doped TiO2 on the property of perovskite solar cell

    NASA Astrophysics Data System (ADS)

    Zhang, X. Q.; Wu, Y. P.; Huang, Y.; Zhou, Z. H.; Shen, S.

    2017-03-01

    Anatase TiO2 nanoparticles with different amounts of fluorine doping were synthesized by a hydrothermal method using hydrogen titanate nanotubes as a precursor and applied as mesoporous layer for preparing perovskite solar cell. The morphology and structures were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD), meanwhile, the properties and performances were tested by photoluminescence spectrum (PL) and current density and voltage (J-V) curve. It was found that doping fluorine into TiO2 made the photoelectric conversion efficiency (PCE) of perovskite solar cell (PSC) to be improved. The best PCE of PSC based on a F-doped TiO2 was 13.06% and increased by 51% compared to an un-doped TiO2. The study provided a direction for the exploration of high performance electron transport layer of perovskite solar cell.

  6. A Frequency-Independent Vibrational Energy Harvester using Symmetrically Charged Comb-Drive Electrodes with Heavily Doped Ion Electrets

    NASA Astrophysics Data System (ADS)

    Mitsuya, H.; Ashizawa, H.; Ishibashi, K.; Homma, H.; Ataka, M.; Hashiguchi, G.; Fujita, H.; Toshiyoshi, H.

    2016-11-01

    An energy harvester has been developed to efficiently earn energy from both cyclic and impulse vibrations by using a symmetric pair of comb-electrodes that are heavily doped with potassium-ions to form electrets. By equalizing the electromechanical forces on the opposing comb-drives, energy conversion efficiency is enhanced for both impulses and broad-frequency harmonic vibrations.

  7. Slow magnetic fluctuations and superconductivity in fluorine-doped NdFeAsO

    NASA Astrophysics Data System (ADS)

    Lamura, G.; Shiroka, T.; Bonfà, P.; Sanna, S.; De Renzi, R.; Putti, M.; Zhigadlo, N. D.; Katrych, S.; Khasanov, R.; Karpinski, J.

    2015-01-01

    Among the widely studied superconducting iron-pnictide compounds belonging to the Ln1111 family (with Ln a lanthanide), a systematic investigation of the crossover region between the superconducting and the antiferromagnetic phase for the Ln = Nd case has been missing. We fill this gap by focusing on the intermediate doping regime of NdFeAsO1 -xFx by means of dc-magnetometry and muon-spin spectroscopy (μ SR ) measurements. The long-range order we detect at low fluorine doping is replaced by short-range magnetic interactions at x =0.08 , where also superconductivity appears. In this case, longitudinal-field μ SR experiments show clear evidence of slow magnetic fluctuations that disappear at low temperatures. This fluctuating component is ascribed to the glassy-like character of the magnetically ordered phase of NdFeAsO at intermediate fluorine doping.

  8. Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation

    SciTech Connect

    Melentev, G. A. Shalygin, V. A.; Vorobjev, L. E.; Panevin, V. Yu.; Firsov, D. A.; Riuttanen, L.; Suihkonen, S.; Korotyeyev, V. V.; Lyaschuk, Yu. M.; Kochelap, V. A.; Poroshin, V. N.

    2016-03-07

    We present the results of experimental and theoretical studies of the surface plasmon polariton excitations in heavily doped GaN epitaxial layers. Reflection and emission of radiation in the frequency range of 2–20 THz including the Reststrahlen band were investigated for samples with grating etched on the sample surface, as well as for samples with flat surface. The reflectivity spectrum for p-polarized radiation measured for the sample with the surface-relief grating demonstrates a set of resonances associated with excitations of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. The characteristic features of the reflectivity spectrum, namely, frequencies, amplitudes, and widths of the resonance dips, are well described theoretically by a modified technique of rigorous coupled-wave analysis of Maxwell equations. The emissivity spectra of the samples were measured under epilayer temperature modulation by pulsed electric field. The emissivity spectrum of the sample with surface-relief grating shows emission peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. Theoretical analysis based on the blackbody-like radiation theory well describes the main peculiarities of the observed THz emission.

  9. Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation

    NASA Astrophysics Data System (ADS)

    Melentev, G. A.; Shalygin, V. A.; Vorobjev, L. E.; Panevin, V. Yu.; Firsov, D. A.; Riuttanen, L.; Suihkonen, S.; Korotyeyev, V. V.; Lyaschuk, Yu. M.; Kochelap, V. A.; Poroshin, V. N.

    2016-03-01

    We present the results of experimental and theoretical studies of the surface plasmon polariton excitations in heavily doped GaN epitaxial layers. Reflection and emission of radiation in the frequency range of 2-20 THz including the Reststrahlen band were investigated for samples with grating etched on the sample surface, as well as for samples with flat surface. The reflectivity spectrum for p-polarized radiation measured for the sample with the surface-relief grating demonstrates a set of resonances associated with excitations of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. The characteristic features of the reflectivity spectrum, namely, frequencies, amplitudes, and widths of the resonance dips, are well described theoretically by a modified technique of rigorous coupled-wave analysis of Maxwell equations. The emissivity spectra of the samples were measured under epilayer temperature modulation by pulsed electric field. The emissivity spectrum of the sample with surface-relief grating shows emission peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. Theoretical analysis based on the blackbody-like radiation theory well describes the main peculiarities of the observed THz emission.

  10. Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates

    NASA Astrophysics Data System (ADS)

    Baron, C.; Deneuville, A.; Wade, M.; Jomard, F.; Chevallier, J.

    2006-02-01

    Heavily boron doped 1.8 to 2.4 μm thick homoepitaxial diamond films with 1.5 × 1021 cm-3 [B] 1.75 × 1021 cm-3 have been deposited directly on their (100) Ib substrates at 830 °C. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 μm, therefore the bulk of the films as well as their interfaces with their substrates. The bulk of these films exhibit a band with shoulders ascribed to BETO (5.036 eV), FETO (5.094 eV) and BENP (5.184 eV) excitons whose energies are downward shifted by about 180 meV in comparison with monocrystalline diamond with low [B] < 5 × 1018 cm-3. This large shift allows the appearance of narrow peaks around 5.216, 5.271 and 5.357 eV ascribed to BETO, FETO and BENP from interfacial layers with low [B]. From their BETO to FETO ratio, their concentration of boron on isolated substitutional sites is significantly lower than their total low [B] content measured by SIMS. A tentative model is proposed to explain the characteristics of these 40 to 160 quasihomogeneous interfacial layers.

  11. Fluorine doping effects on the magnetic and electric properties of BiFeO3

    NASA Astrophysics Data System (ADS)

    Hu, Y. C.; Jiang, Z. Z.; Gao, K. G.; Cheng, G. F.; Ge, J. J.; Lv, X. M.; Wu, X. S.

    2012-05-01

    Electron-doping introduced fluorine (F) replacement of the oxygen in BiFeO3 (BFO) can be compensated by the valence change of iron from Fe3+ to Fe2+. We successfully incorporate F in BFO by sol-gel method. F-doping is found to significantly enhance the ferromagnetism up to nearly two order for x = 0.25 compared with x = 0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the magnetization and electric polarization in multiferroic oxides.

  12. Investigation of fluorine adsorption on nitrogen doped MgAl2O4 surface by first-principles

    NASA Astrophysics Data System (ADS)

    Lv, Xiaojun; Xu, Zhenming; Li, Jie; Chen, Jiangan; Liu, Qingsheng

    2016-07-01

    The nature of fluorine adsorption on pure and N doped MgAl2O4 surface has been investigated by first-principles calculations based on the density functional theory. Calculated results indicate that MgAl2O4 surface is fluorine-loving, not hydrophilic. Nitrogen doped MgAl2O4 (100) surface shows the highest fluorine adsorption performance and fluorine atom preferentially adsorbs on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: Nitrogen doped MgAl2O4 (100) > Al2O3 (0001) > MgAl2O4 (100) > MgO (100). In-depth PDOS analysis suggested that 2p orbitals of F atom strongly hybridized with 3s- and 3p-orbitals of Al atom contribute to its high adsorption intensity. According to the analysis of Hirshfeld charge, the excellent fluorine adsorption performance of nitrogen doped MgAl2O4 attributes to the electron compensation effect of nitrogen atom and strong electrostatic interactions. All these evidences demonstrate a fact nitrogen doped MgAl2O4 is a promising candidate for fluorine removal.

  13. Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

    NASA Astrophysics Data System (ADS)

    Sedghi, N.; Li, H.; Brunell, I. F.; Dawson, K.; Guo, Y.; Potter, R. J.; Gibbon, J. T.; Dhanak, V. R.; Zhang, W. D.; Zhang, J. F.; Hall, S.; Robertson, J.; Chalker, P. R.

    2017-08-01

    The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods.

  14. Energy-gap reduction in heavily doped silicon: Causes and consequences

    NASA Astrophysics Data System (ADS)

    Pantelides, Sokrates T.; Selloni, Annabella; Car, Roberto

    1985-02-01

    The authors review briefly the existing theoretical treatments of the various effects that contribute to the reduction of the energy gap in heavily doped Si, namely electron-electron and electron-impurity interactions and the effect of disorder in the impurity distribution. They then turn to the longstanding question why energy-gap reductions extracted from three different types of experiments have persistently produced values with substantial discrepancies, making it impossible to compare with theoretical values. First, they demonstrate that a meaningful comparison between theory and experiment can indeed be made if theoretical calculations are carried out for actual quantities that experiments measure, e.g. luminescence spectra, as recently done by Selloni and Pantelides. Then, they demonstrate that, independent of any theoretical calculations, the optical absorption spectra are fully consistent with the luminescence spectra and that the discrepancies in the energy-gap reductions extracted from the two sets of spectra are caused entirely by the curve-fitting procedures used in analyzing optical-absorption data. Finally, they show explicitly that, as already believed by many authors, energy-gap reductions extracted from electrical measurements on transistors do not correspond to true gap reductions. They identify two corrections that must be added to the values extracted from the electrical data in order to arrive at the true gap reductions and show that the resulting values are in good overall agreement with luminescence and absorption data. They, therefore, demonstrate that the observed reduction in emitter injection efficiency in bipolar transistors is not strictly due to a gap reduction, as generally believed, but to three very different effects.

  15. Investigation on the magnetic and electrical properties of fluorine-doped magnetites

    NASA Astrophysics Data System (ADS)

    Gao, Lei; Li, Ran; Chen, Qianwang

    2012-08-01

    A fluorine-doped magnetite was synthesized using ferroferric oxide (Fe3O4) powder and ammonium fluoride (NH4F) as starting materials by a hydrothermal method and by subsequently annealing in vacuum atmosphere at 1450 °C. The content of fluorine dopants was measured by x-ray electron spectroscopy. When an oxygen atom was replaced by a fluorine atom, it would introduce one excess electron to reduce an Fe3+ ion to an Fe2+ ion in a tetrahedral A site for charge compensation, leading to a large variation in magnetic and electrical properties. The appearance of Fe2+ ions in the tetrahedral A sites caused a decrease in the spin magnetic moment, resulting in an increase in the Landé g-factor between 110 and 200 K, and the magnetic susceptibility in the range 10-350 K. At the same time, the electrons of the Fe2+ ions in A sites may escape and turn into new carriers in the presence of an electrical bias field, resulting in a reduction in the resistance of the fluorine-doped magnetite from 30 to 292 K.

  16. Signature of multigap nodeless superconductivity in fluorine-doped NdFeAsO

    NASA Astrophysics Data System (ADS)

    Adamski, A.; Krellner, C.; Abdel-Hafiez, M.

    2017-09-01

    We investigate the temperature dependence of the lower critical field Hc 1(T ) , the field at which vortices penetrate into the sample, of a high-quality fluorine-doped NdFeAsO single crystal under static magnetic fields H parallel to the c axis. The temperature dependence of the first vortex penetration field has been experimentally obtained and pronounced changes of the Hc 1(T ) curvature are observed, which are attributed to the multiband superconductivity. Using a two-band model with s -wave-like gaps, the temperature dependence of the lower critical field Hc 1(T ) can be well described. These observations clearly show that the superconducting energy gap in fluorine-doped NdFeAsO is nodeless. The values of the penetration depth at T =0 K have been determined and confirm that the pnictide superconductors obey an Uemura-style relationship between Tc and λa b(0) -2 .

  17. Pairing mechanism of heavily electron doped FeSe systems: dynamical tuning of the pairing cutoff energy

    NASA Astrophysics Data System (ADS)

    Bang, Yunkyu

    2016-11-01

    We studied the pairing mechanism of the heavily electron doped FeSe (HEDIS) systems, which commonly have one incipient hole band—a band top below the Fermi level by a finite energy distance ε b —at Γ point and ordinary electron bands at M points in Brillouin zone (BZ). We found that the system allows two degenerate superconducting solutions with the exactly same T c in clean limit: the incipient {s}{he}+/- -gap ({{{Δ }}}h-\

  18. Superconductivity in fluorine and yttrium co-doped SmFeAsO

    NASA Astrophysics Data System (ADS)

    Lai, K. T.; Kwong, F. L.; Ng, Dickon H. L.

    2012-05-01

    Polycrystalline fluorine and yttrium co-doped SmFeAsO samples are synthesized by solid state sintering and their physical properties are studied. The lattice parameters of the Sm1-yYyFeAsO0.8F0.2 samples decrease with the increasing y due to the smaller Y ions and the stiffness of the Y-O bond. The maximum critical temperature Tc of the samples is at y = 0.05. This may be due to the fact that the strong interaction between Sm and Fe of the Fe-As bond is being re-disturbed by the doped Y ions.

  19. Study of fluorine losses and spectroscopic properties of Er 3+ doped oxyfluoride silicate glasses and glass ceramics

    NASA Astrophysics Data System (ADS)

    Lin, Lejing; Ren, Guozhong; Chen, Minpeng; Liu, Yang; Yang, Qibin

    2009-08-01

    The fluorine losses during synthesis of Er 3+ doped transparent glasses in the SiO 2-PbO-PbF 2 system were investigated. The final fluorine contents of the glasses were detected by using a fluorine ion selective electrode. The results show that high fluorine losses are occured in the normal preparation processes. With the increase of initial PbF 2 contents or melting time resulted in the increase of the fluorine losses. The thermal and spectroscopic properties of the glasses and the corresponding glass ceramics were investigated through the analysis of the differential scanning calorimetry (DSC), absorption and upconversion luminescence spectra. The effects of fluorine contents show a decrease of the glass transition temperatures (Tg) of the glasses and an enhancement of upconversion intensity of the corresponding glass ceramics.

  20. Electrical Properties of Heavily Doped and Partially Compensated Calcium Germanium Substituted Yttrium Iron Garnet Films.

    NASA Astrophysics Data System (ADS)

    Yuan, Sui Hua

    The electrical properties of heavily doped partially compensated calcium germanium substituted yttrium iron garnet (CaGe:YIG) thin film have been investigated for the first time using the following techniques: (1) I-V characteristic measurements, (2) D.C. conductivity measurements, (3) A newly developed double box car transient current spectroscopy, (4) Thermally stimulated current measurements, (5) Thermopower measurements, and (6) Optical absorption spectroscopy. Some unusual effects observed in these materials are as follows: (1) The activation energy of conductivity has two values, one on the order of 0.40 eV at temperatures above 200 K and the other on the order of 0.01 eV at temperatures below 100 K, (2) In the temperature range above 200 K, the conductivity and its activation energy are dependent on the applied voltage across the sample, (3) The time constants of the transient current through the sample are dependent on the temperature, (4) There is a S-shape I -V characteristic of the samples in low electric fields (~10^2 V/cm), (5) There is a metastable high conductivity state (HCS) in the samples at low temperatures. The conductivities in the HCS are about 5 orders of magnitude higher than those in the NS of the samples at the same temperatures. Potential fluctuations (PF) having dimensions on the order of 200 A, due to the random distribution of impurities, are assumed to give rise to an amorphous-like electronic band structure. In this model, the density of state tails and mobility edges are assumed. When the concentration of acceptors is in excess to that of donors the Fermi level is located in the tail of the valence band above the valence mobility edge. At high temperatures the conduction is due to holes in the valence band having the higher activation energy. At lower temperatures the conduction is due to holes hopping between sites at the Fermi level. The compensated acceptor levels within kT of the Fermi level act as the hole trap levels and

  1. Temperature dependences of optical path length in fluorine-doped silica glass and bismuthate glass

    NASA Astrophysics Data System (ADS)

    Koike, Akio; Sugimoto, Naoki

    2006-02-01

    Temperature dependences of optical path length (dS/dT; calculated using the equation, dS/dT = dn/dT + na, where a is coefficient of thermal expansion, n is refractive index and dn/dT is temperature coefficient of refractive index) in various oxide glasses were investigated. The dS/dT is generally difficult to adjust by change of glass composition because dn/dT and a are interrelated. However, low dS/dT materials are desired for optical applications such as athermal devices, and high dS/dT materials can be used for thermo-optic devices. Pure silica glass is well-known as a typical low dS/dT material but still not sufficient. Fluorine-doped silica glass showed a lower dS/dT than that of pure silica glass. By fluorine-doping in silica glass, refractive index and dn/dT decreased but a near room temperature stayed at the same level. As a result, the dS/dT decreased with increasing fluorine concentration. On the other hand, bismuthate glass showed the highest dS/dT in this study. Most glasses having high a such as tellurite glass showed negative dn/dT. However, bismuthate glasses showed positive dn/dT in spite of high a. As a result, bismuthate glasses showed quite high dS/dT. These results indicate that dS/dT of the glass can be controllable and that fluorine doped silica glass and bismuthate glass are appropriate candidate materials for optical applications.

  2. Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals

    SciTech Connect

    Romaka, V. A.; Fruchart, D.; Hlil, E. K.; Gladyshevskii, R. E.; Gignoux, D.; Romaka, V. V.; Kuzhel, B. S.; Krayjvskii, R. V.

    2010-03-15

    The crystal structure, density of electron states, electron transport, and magnetic characteristics of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals (R) have been studied in the ranges of temperatures 1.5-400 K, concentrations of rare-earth metal 9.5 x 10{sup 19}-9.5 x 10{sup 21} cm{sup -3}, and magnetic fields H {<=} 15 T. The regions of existence of Zr{sub 1-x}R{sub x}NiSn solid solutions are determined, criteria for solubility of atoms of rare-earth metals in ZrNiSn and for the insulator-metal transition are formulated, and the nature of 'a priori doping' of ZrNiSn is determined as a result of redistribution of Zr and Ni atoms at the crystallographic sites of Zr. Correlation between the concentration of the R impurity, the amplitude of modulation of the bands of continuous energies, and the degree of occupation of potential wells of small-scale fluctuations with charge carriers is established. The results are discussed in the context of the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

  3. Preparation of silica coatings heavily doped with spiropyran using perhydropolysilazane as the silica source and their photochromic properties.

    PubMed

    Yamano, Akihiro; Kozuka, Hiromitsu

    2009-04-30

    Silica coatings doped with spiropyran (SP) were prepared using xylene solutions of perhydropolysilazane (PHPS) as the silica source, where the SP-doped PHPS coatings were prepared by spin-coating and the PHPS-to-silica conversion was achieved by exposing the coatings to the vapor from aqueous ammonia at room temperature. The films could be heavily doped with SP at SP/(SP + PHPS) mass ratio as high as 0.2. The as-deposited SP-doped PHPS films were transparent and light-yellow, which turned to red as the PHPS-to-silica conversion proceeded, where the absorbance at 500 nm increased. When the films were stored in air in the dark for 73 h after the exposure treatment, the absorbance at 500 nm further increased, where the film turned from red to dark red. The SP-doped silica coatings thus obtained showed reversible photochromic reaction, where the absorbance at 500 nm decreased and increased when the films were irradiated with visible and ultraviolet light, respectively. The pencil hardness of the films was higher than 9H at a load of 1 kg, while significant amount of SP was leached out when the films were soaked in xylene.

  4. Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

    SciTech Connect

    Taniguchi, Chisato; Ichimura, Aiko; Ohtani, Noboru; Katsuno, Masakazu; Fujimoto, Tatsuo; Sato, Shinya; Tsuge, Hiroshi; Yano, Takayuki

    2016-04-14

    The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded in accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.

  5. Tunable doping and band gap of graphene on functionalized hexagonal boron nitride with hydrogen and fluorine.

    PubMed

    Tang, Shaobin; Yu, Jianping; Liu, Liangxian

    2013-04-14

    First-principles calculations have been used to investigate the structural and electronic properties of graphene supported on functionalized hexagonal boron nitride (h-BN) with hydrogen and fluorine atoms. Our results show that the hydrogenation and fluorination of the h-BN substrate modify the electronic properties of graphene. Interactions of graphene with fully hydrogenated or fully fluorinated h-BN and half-hydrogenated and half-fluorinated h-BN with H at N sites and F at the B sites can lead to n- or p-type doping of graphene. The different doping effect may be attributed to the significant charge transfer from graphene to the substrate. Interestingly, when graphene is supported on the functionalized h-BN with H at B sites and F at N sites (G/HBNF), a finite band gap of 79 meV in graphene is opened due to the equivalence breaking of two sublattices of graphene, and can be effectively modulated by changing the interlayer spacing, increasing the number of functionalized BN layers, and applying an external electric field. More importantly, the modification of the band gap in G/HBNF with a functionalized BN bilayer by the electric field is more pronounced than that of the single-layer h-BN, which is increased to 408 meV with 0.8 V Å(-1). Thus, graphene on chemically modified h-BN with a tunable and sizeable band gap may provide a novel way for fabricating high-performance graphene-based nanodevices.

  6. Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

    SciTech Connect

    Wang, Hao; Han, Weihua Ma, Liuhong; Li, Xiaoming; Hong, Wenting; Yang, Fuhua

    2014-03-31

    We demonstrate current-voltage spectroscopy of dopant-induced quantum dots in heavily n-doped junctionless nanowire transistors (JNTs) at low temperatures. The similar multiple-split current peak features for both single-channel and multiple-channel JNTs are found at the initial stage of conduction below the temperature of 75 K. The temperature stability of the pinch-off voltage, affected by activated electrons from defects and donor ionization, has been effectively improved by the 20 nm-width nanowires. The transition temperature for single electron tunneling to thermal activated transport is dependent on the ionization energy of dopants.

  7. Long period gratings written in fluorine-doped fibers by electric arc discharge technique

    NASA Astrophysics Data System (ADS)

    Ranjan, Rajeev; Esposito, Flavio; Iadicicco, Agostino; Stǎncǎlie, Andrei; Sporea, Dan; Campopiano, Stefania

    2016-05-01

    In this work, we present long period gratings (LPGs) in two different Fluorine-doped fibers realized by electric arc discharge (EAD) technique. Firstly, we optimized the EAD fabrication procedure for standard Ge-doped fibers where we are able to fabricate relatively short LPGs with deep attenuation bands (up to 32 dB) and trivial power losses. Successively, for the first time to the best of our knowledge, we produced LPGs in F-doped fibers with maximum attenuation band depths in range 25-30 dB and trivial power losses. We also investigated the sensitivity of LPGs fabricated in such F-doped fibers, with surrounding refractive index (SRI) and temperature changes, and compared the results with those of LPGs fabricated in standard fiber. We found that SRI response of LPGs in F-doped fibers is significantly higher than in standard fiber and it strongly depends on the type of F-doped fiber considered, whereas they exhibit a slightly lower sensitivity to temperature compared to LPGs in standard fiber.

  8. Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature ( <200° C)

    NASA Astrophysics Data System (ADS)

    Oshima, Takayuki; Abe, Katsuya; Yamada, Akira; Konagai, Makoto

    1995-11-01

    Heavily B-doped epitaxial Si films were grown by photochemical vapor deposition (photo-CVD) using a gas mixture of SiH4, H2, SiH2Cl2 and B2H6 in the substrate temperature range of 160-210° C. The electrical and optical properties of the obtained films were evaluated. The most striking result was that B atoms in the as-grown films were almost 100% neutralized even though the hole concentration was increased to 1.3×1020 cm-3 by annealing. It was found that the hole concentration increased as a stretched-exponential function of the annealing time, and an infrared absorption band at 2210 cm-1, which is regarded as a B-related band, appeared as the B-doping quantity was increased. The neutralization of B is considered to be related to H atoms in the films.

  9. Porous titania with heavily self-doped Ti3+ for specific sensing of CO at room temperature.

    PubMed

    Su, Juan; Zou, Xiao-Xin; Zou, Yong-Cun; Li, Guo-Dong; Wang, Pei-Pei; Chen, Jie-Sheng

    2013-05-20

    Semiconductor-based sensors have played an important role in efficient detection of combustible, flammable, and toxic gases, but they usually need to operate at elevated temperatures (200 °C or higher). Although reducing the operation temperature down to room temperature is of practical significance, it is still a huge challenge to fabricate room temperature sensors with a low cost. Here we show a novel "self-doping" strategy to overcome simultaneously both difficulties of "high resistance" and "low reaction rate", which have always been encountered for room-temperature operation of semiconductor-based sensors. In particular, a porous crystalline titania with heavily self-doped Ti(3+) species has been prepared by using a porous amorphous TiO2 and urea as the starting materials. The resulting Ti(3+) self-doped TiO2 material serves as an efficient room-temperature gas-sensing material for specific CO detection with fast response/recovery. The self-dopant (Ti(3+)) in the titania material has proved to decrease the resistance of TiO2 significantly on the one hand and to increase the chemisorbed oxygen species substantially, thus enhancing the surface reaction activity on the other. Such a self-doping concept is anticipated to give a fresh impetus to rational design of room-temperature sensing devices with low costs.

  10. Poor fluorinated graphene sheets carboxymethylcellulose polymer composite mode locker for erbium doped fiber laser

    SciTech Connect

    Mou, Chengbo E-mail: a.rozhin@aston.ac.uk; Turitsyn, Sergei; Rozhin, Aleksey E-mail: a.rozhin@aston.ac.uk; Arif, Raz; Lobach, Anatoly S.; Spitsina, Nataliya G.; Khudyakov, Dmitry V.; Kazakov, Valery A.

    2015-02-09

    We report poor fluorinated graphene sheets produced by thermal exfoliation embedding in carboxymethylcellulose polymer composite (GCMC) as an efficient mode locker for erbium doped fiber laser. Two GCMC mode lockers with different concentration have been fabricated. The GCMC based mode locked fiber laser shows stable soliton output pulse shaping with repetition rate of 28.5 MHz and output power of 5.5 mW was achieved with the high concentration GCMC, while a slightly higher output power of 6.9 mW was obtained using the low concentration GCMC mode locker.

  11. Poor fluorinated graphene sheets carboxymethylcellulose polymer composite mode locker for erbium doped fiber laser

    NASA Astrophysics Data System (ADS)

    Mou, Chengbo; Arif, Raz; Lobach, Anatoly S.; Khudyakov, Dmitry V.; Spitsina, Nataliya G.; Kazakov, Valery A.; Turitsyn, Sergei; Rozhin, Aleksey

    2015-02-01

    We report poor fluorinated graphene sheets produced by thermal exfoliation embedding in carboxymethylcellulose polymer composite (GCMC) as an efficient mode locker for erbium doped fiber laser. Two GCMC mode lockers with different concentration have been fabricated. The GCMC based mode locked fiber laser shows stable soliton output pulse shaping with repetition rate of 28.5 MHz and output power of 5.5 mW was achieved with the high concentration GCMC, while a slightly higher output power of 6.9 mW was obtained using the low concentration GCMC mode locker.

  12. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    PubMed

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  13. Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Horyn, A. M.

    2014-12-15

    The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ≈ 9.5 × 10{sup 19}−5.7 × 10{sup 20} cm{sup −3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ∼1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1−x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

  14. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Kaczorowski, D.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Kovbasyuk, T. M.

    2015-03-15

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.

  15. Investigation of fluorine-doped tin oxide based optically transparent E-shaped patch antenna for terahertz communications

    SciTech Connect

    Anand, S. E-mail: darak.mayur@gmail.com Darak, Mayur Sudesh E-mail: darak.mayur@gmail.com Kumar, D. Sriram E-mail: darak.mayur@gmail.com

    2014-10-15

    In this paper, a fluorine-doped tin oxide based optically transparent E-shaped patch antenna is designed and its radiation performance is analyzed in the 705 – 804 GHz band. As optically transparent antennas can be mounted on optical display, they facilitate the reduction of overall system size. The proposed antenna design is simulated using electromagnetic solver - Ansys HFSS and its characteristics such as impedance bandwidth, directivity, radiation efficiency and gain are observed. Results show that the fluorine-doped tin oxide based optically transparent patch antenna overcomes the conventional patch antenna limitations and thus the same can be used for solar cell antenna used in satellite systems.

  16. Fluorine-doped antiperovskite electrolyte for all-solid-state Lithium-ion batteries

    SciTech Connect

    Li, Yutao; Zhou, Weidong; Xin, Sen; Li, Shuai; Zhu, Jinlong; Lu, Xujie; Cui, Zhiming; Jia, Quanxi; Zhou, Jianshi; Zhao, Yusheng; Goodenough, John B.

    2016-06-30

    A fluorine-doped antiperovskite Li-ion conducto Li2(OH)X (X=Cl, Br) is shown to be a promising candidat for a solid electrolyte in an all-solid-state Li-ion rechargeabl battery. Substitution of F¯ for OH¯ transforms orthorhombi Li2OHCl to a room-temperature cubic phase, which show electrochemical stability to 9 V versus Li+/Li and two orders o magnitude higher Li-ion conductivity than that of orthorhombi Li2OHCl. As a result, an all-solid-state Li/LiFePO4 with F-dope Li2OHCl as the solid electrolyte showed good cyclability an a high coulombic efficiency over 40 charge/discharge cycles

  17. Fluorine-doped antiperovskite electrolyte for all-solid-state Lithium-ion batteries

    DOE PAGES

    Li, Yutao; Zhou, Weidong; Xin, Sen; ...

    2016-06-30

    A fluorine-doped antiperovskite Li-ion conducto Li2(OH)X (X=Cl, Br) is shown to be a promising candidat for a solid electrolyte in an all-solid-state Li-ion rechargeabl battery. Substitution of F¯ for OH¯ transforms orthorhombi Li2OHCl to a room-temperature cubic phase, which show electrochemical stability to 9 V versus Li+/Li and two orders o magnitude higher Li-ion conductivity than that of orthorhombi Li2OHCl. As a result, an all-solid-state Li/LiFePO4 with F-dope Li2OHCl as the solid electrolyte showed good cyclability an a high coulombic efficiency over 40 charge/discharge cycles

  18. Fluorine-Doped Antiperovskite Electrolyte for All-Solid-State Lithium-Ion Batteries.

    PubMed

    Li, Yutao; Zhou, Weidong; Xin, Sen; Li, Shuai; Zhu, Jinlong; Lü, Xujie; Cui, Zhiming; Jia, Quanxi; Zhou, Jianshi; Zhao, Yusheng; Goodenough, John B

    2016-08-16

    A fluorine-doped antiperovskite Li-ion conductor Li2 (OH)X (X=Cl, Br) is shown to be a promising candidate for a solid electrolyte in an all-solid-state Li-ion rechargeable battery. Substitution of F(-) for OH(-) transforms orthorhombic Li2 OHCl to a room-temperature cubic phase, which shows electrochemical stability to 9 V versus Li(+) /Li and two orders of magnitude higher Li-ion conductivity than that of orthorhombic Li2 OHCl. An all-solid-state Li/LiFePO4 with F-doped Li2 OHCl as the solid electrolyte showed good cyclability and a high coulombic efficiency over 40 charge/discharge cycles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Fluorination of Boron-Doped Diamond Film Electrodes for Minimization of Perchlorate Formation.

    PubMed

    Gayen, Pralay; Chaplin, Brian P

    2017-08-23

    This research investigated the effects of surface fluorination on both rates of organic compound oxidation (phenol and terephthalic acid (TA)) and ClO4(-) formation at boron-doped diamond (BDD) film anodes at 22 °C. Different fluorination methods (i.e., electrochemical oxidation with perfluorooctanoic acid (PFOA), radio frequency plasma, and silanization) were used to incorporate fluorinated moieties on the BDD surface, which was confirmed by X-ray photoelectron spectroscopy (XPS). The silanization method was found to be the most effective fluorination method using a 1H,1H,2H,2H-perfluorodecyltrichlorosilane precursor to form a self-assembled monolayer (SAM) on the oxygenated BDD surface. The ClO4(-) formation decreased from rates of 0.45 ± 0.03 mmol m(-2) min(-1) during 1 mM NaClO3 oxidation and 0.28 ± 0.01 mmol m(-2) min(-1) during 10 mM NaCl oxidation on the BDD electrode to below detectable levels (<0.12 μmoles m(-2) min(-1)) for the BDD electrode functionalized by a 1H,1H,2H,2H-perfluorodecyltrichlorosilane SAM. These decreases in rates corresponded to 99.94 and 99.85% decreases in selectivity for ClO4(-) formation during the electrolysis of 10 mM NaCl and 1 mM NaClO3 electrolytes, respectively. By contrast, the oxidation rates of phenol were reduced by only 16.3% in the NaCl electrolyte and 61% in a nonreactive 0.1 M KH2PO4 electrolyte. Cyclic voltammetry with Fe(CN)6(3-/4-) and Fe(3+/2+) redox couples indicated that the long fluorinated chains created a blocking layer on the BDD surface that inhibited charge transfer via steric hindrance and hydrophobic effects. The surface coverages and thicknesses of the fluorinated films controlled the charge transfer rates, which was confirmed by estimates of film thicknesses using XPS and density functional theory simulations. The aliphatic silanized electrode also showed very high stability during OH(•) production. Perchlorate formation rates were below the detection limit (<0.12 μmoles m(-2) min(-1)) for up to

  20. Effect of fluorine doping on highly transparent conductive spray deposited nanocrystalline tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Moholkar, A. V.; Pawar, S. M.; Rajpure, K. Y.; Bhosale, C. H.; Kim, J. H.

    2009-09-01

    The undoped and fluorine doped thin films are synthesized by using cost-effective spray pyrolysis technique. The dependence of optical, structural and electrical properties of SnO 2 films, on the concentration of fluorine is reported. Optical absorption, X-ray diffraction, scanning electron microscope (SEM) and Hall effect studies have been performed on SnO 2:F (FTO) films coated on glass substrates. The film thickness varies from 800 to 1572 nm. X-ray diffraction pattern reveals the presence of cassiterite structure with (2 0 0) preferential orientation for FTO films. The crystallite size varies from 35 to 66 nm. SEM and AFM study reveals the surface of FTO to be made of nanocrystalline particles. The electrical study reveals that the films are degenerate and exhibit n-type electrical conductivity. The 20 wt% F doped film has a minimum resistivity of 3.8 × 10 -4 Ω cm, carrier density of 24.9 × 10 20 cm -3 and mobility of 6.59 cm 2 V -1 s -1. The sprayed FTO film having minimum resistance of 3.42 Ω/cm 2, highest figure of merit of 6.18 × 10 -2 Ω -1 at 550 nm and 96% IR reflectivity suggest, these films are useful as conducting layers in electrochromic and photovoltaic devices and also as the passive counter electrode.

  1. Fluorine doping into diamond-like carbon coatings inhibits protein adsorption and platelet activation.

    PubMed

    Hasebe, Terumitsu; Yohena, Satoshi; Kamijo, Aki; Okazaki, Yuko; Hotta, Atsushi; Takahashi, Koki; Suzuki, Tetsuya

    2007-12-15

    The first major event when a medical device comes in contact with blood is the adsorption of plasma proteins. Protein adsorption on the material surface leads to the activation of the blood coagulation cascade and the inflammatory process, which impair the lifetime of the material. Various efforts have been made to minimize protein adsorption and platelet adhesion. Recently, diamond-like carbon (DLC) has received much attention because of their antithrombogenicity. We recently reported that coating silicon substrates with fluorine-doped diamond-like carbon (F-DLC) drastically suppresses platelet adhesion and activation. Here, we evaluated the protein adsorption on the material surfaces and clarified the relationship between protein adsorption and platelet behaviors, using polycarbonate and DLC- or F-DLC-coated polycarbonate. The adsorption of albumin and fibrinogen were assessed using a colorimetric protein assay, and platelet adhesion and activation were examined using a differential interference contrast microscope. A higher ratio of albumin to fibrinogen adsorption was observed on F-DLC than on DLC and polycarbonate films, indicating that the F-DLC film should prevent thrombus formation. Platelet adhesion and activation on the F-DLC films were more strongly suppressed as the amount of fluorine doping was increased. These results show that the F-DLC coating may be useful for blood-contacting devices. (c) 2007 Wiley Periodicals, Inc. J Biomed Mater Res, 2007.

  2. Surface functionalization of fluorine-doped tin oxide samples through electrochemical grafting.

    PubMed

    Lamberti, F; Agnoli, S; Brigo, L; Granozzi, G; Giomo, M; Elvassore, N

    2013-12-26

    Transparent conductive oxides are emerging materials in several fields, such as photovoltaics, photoelectrochemistry, and optical biosensing. Their high chemical inertia, which ensured long-term stability on one side, makes challenging the surface modification of transparent conductive oxides; long-term robust modification, high yields, and selective surface modifications are essential prerequisite for any further developments. In this work, we aim at inducing chemical functionality on fluorine-doped tin oxide surfaces (one of the most inexpensive transparent conductive oxide) by means of electrochemical grafting of aryl diazonium cations. The grafted layers are fully characterized by photoemission spectroscopy, cyclic voltammetry, and atomic force microscopy showing linear correlation between surface coverage and degree of modification. The electrochemical barrier effect of modified surfaces was studied at different pH to characterize the chemical nature of the coating. We showed immuno recognition of biotin complex built onto grafted fluorine-doped tin oxides, which opens the perspective of integrating FTO samples with biological-based devices.

  3. Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

    2016-07-01

    Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

  4. X-ray absorption fine structure study of heavily P doped (111) and (001) diamond

    NASA Astrophysics Data System (ADS)

    Shikata, Shinichi; Yamaguchi, Koji; Fujiwara, Akihiko; Tamenori, Yusuke; Yahiro, Jumpei; Kunisu, Masahiro; Yamada, Takatoshi

    2017-02-01

    X-ray absorption fine structure (XANES) measurements were carried out for P doped (111) and (001) diamond films, and the results were compared with those from simulations. For the (111) spectrum, the main strong peak observed at 2147.0 eV and three broad peaks centered at 2150 eV, 2157 eV, and 2165 eV were observed. The assignment with the estimation by the simulation of the XANES peaks showed the interstitial sites additional to the substitutional site. The Extended X-ray Absorption Fine Structure (EXAFS) result of the P doped (111) diamond showed that the first and second neighboring peaks are observed at 1.21 A and 2.0 A, respectively. The assignment with the estimation by the simulation of the EXAFS peaks also showed the interstitial sites additional to the substitutional site. Overall, P in diamonds presumably has dopant sites in both the substitutional and interstitial sites.

  5. Negative photoconductance in heavily doped Si nanowire field-effect transistors.

    PubMed

    Baek, Eunhye; Rim, Taiuk; Schuett, Julian; Baraban, Larysa; Cuniberti, Gianaurelio

    2017-09-29

    We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photo-generated hot electrons trapping by dopants ions and interfacial states. Remarkably, as a comparison of back- and top-gate modulation, we derive the mechanisms of the transition between the negative and the positive conventional photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.

  6. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis

    NASA Astrophysics Data System (ADS)

    Rahul, T. K.; Sandhyarani, N.

    2015-10-01

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  7. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis.

    PubMed

    Rahul, T K; Sandhyarani, N

    2015-11-21

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  8. Electronic transport in heavily doped Ag/n-Si composite films

    NASA Astrophysics Data System (ADS)

    Bates, Clayton W.; Zhang, Chichang

    2013-10-01

    Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111) substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77-500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si matrix by the Ag

  9. Doping effects of fluorinated organic dyes on the open-circuit voltage of bulk-heterojunction photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Watanabe, Tomoki; Yamashita, Kenichi

    2015-08-01

    We have investigated photovoltaic properties of bulk-heterojunction (BHJ) organic absorption layer doped with fluorinated Coumarin dyes. By dilute doping of a fluorinated Coumarin dye, Coumarin 307, into poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) BHJ absorption layer, the open-circuit voltage of photovoltaic device increased by ∼90 mV without the significant degradation in the short-circuit current density. On the other hand, the doping of non-fluorinated Coumarin dye such as Coumarin 2 did not induce such the enhancement effect in the open-circuit voltage. In ultraviolet photoelectron spectroscopies, the doping of Coumarin 307 was found to have no impact on P3HT, but the density of state of PCBM was significantly modified by the doping. The change in the density of state was confirmed also in ultraviolet absorption measurement. Possible explanations for the enhancement in the open-circuit voltage are discussed from the experimental results, and a shift of the vacuum level by the doping can be considered as a direct origin.

  10. Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Beji, Nasreddine; Ajili, Mejda; Turki, Najoua Kamoun

    2016-07-01

    Fluorine-doped indium oxide thin films (In2O3:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In2O3 thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In2O3:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250-2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10-4 Ω cm to 6.58 × 10-4 Ω cm.

  11. Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

    NASA Technical Reports Server (NTRS)

    Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

    2001-01-01

    Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

  12. Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Werner, P.; Vdovin, V. I.; Denisov, D. V.; Sobolev, N. A.; Gösele, U.

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x1019, small complexes consisting of tiny Er precipitates and four petals of ErSi2 platelets have been found additionally. The layer with [Er]= 8×1018 cm-3 was defect free. The formation of silicides from a supersaturated solid solution and Er precipitates is accompanied by the emission of vacancies V resulting in the formation of pores, V-V and V-Er complexes.

  13. Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors

    SciTech Connect

    Ma, Liuhong; Han, Weihua Wang, Hao; Hong, Wenting; Lyu, Qifeng; Yang, Xiang; Yang, Fuhua

    2015-01-21

    We investigated single electron tunneling through a phosphorus donor-induced quantum dot array in heavily n-doped junctionless nanowire transistor. Seven subpeaks splitting in current oscillations are clearly observed due to the coupling of quantum dot array under the bias voltage below 1.0 mV at the temperature of 6 K. The conduction system can be well described by a two-band Hubbard model. The activation energy of phosphorus donors is tuned by the gate voltage to be 7.0 meV for the lower Hubbard band and 4.4 meV for the upper Hubbard band due to the localization effects below threshold voltage. The evolution of electron behaviors in the quantum dots is identified by adjusting the gate voltage from quantum-dot regime to one-dimensional regime.

  14. Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

    SciTech Connect

    Pietnoczka, A.; Bacewicz, R.; Slupinski, T.; Antonowicz, J.; Wei, Su-Huai

    2012-04-01

    The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional Te{sub As} model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium.

  15. Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

    NASA Technical Reports Server (NTRS)

    Luke, K. L.; Cheng, L.-J.

    1986-01-01

    Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

  16. The H+ related defects involved in domain reversal for both near-stoichiometric and heavily Mg-doped lithium niobate crystals

    NASA Astrophysics Data System (ADS)

    Yan, W.; Kong, Y.; Shi, L.; Yao, J.; Chen, S.; Sun, L.; Zhao, D.; Xu, J.; Zhang, G.

    2005-02-01

    Domain reversal was performed on both near-stoichiometric and heavily Mg-doped lithium niobate crystals. H+ related defect structures in these two types of crystals were studied through the infrared absorption spectra. It is found that the intensity of some decomposed peaks of absorption band change apparently during domain reversal for near-stoichiometric lithium niobate crystals but not for heavily Mg-doped lithium niobate crystals. According to these experimental results, distinct models about H+ related defect structure in LiNbO3 lattice were supposed for them. Nb4+Li and Mg3-Nb were considered as the centers of H+ related defect complex for near-stoichiometric and heavily Mg-doped lithium niobate crystals respectively. Different behavior of them was used to explain the difference of infrared absorption spectra during domain reversal between two types of crystals.

  17. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures.

    PubMed

    Lysov, A; Offer, M; Gutsche, C; Regolin, I; Topaloglu, S; Geller, M; Prost, W; Tegude, F-J

    2011-02-25

    We present GaAs electroluminescent nanowire structures fabricated by metal organic vapor phase epitaxy. Electroluminescent structures were realized in both axial pn-junctions in single GaAs nanowires and free-standing nanowire arrays with a pn-junction formed between nanowires and substrate, respectively. The electroluminescence emission peak from single nanowire pn-junctions at 10 K was registered at an energy of around 1.32 eV and shifted to 1.4 eV with an increasing current. The line is attributed to the recombination in the compensated region present in the nanowire due to the memory effect of the vapor-liquid-solid growth mechanism. Arrayed nanowire electroluminescent structures with a pn-junction formed between nanowires and substrate demonstrated at 5 K a strong electroluminescence peak at 1.488 eV and two shoulder peaks at 1.455 and 1.519 eV. The main emission line was attributed to the recombination in the p-doped GaAs. The other two lines correspond to the tunneling-assisted photon emission and band-edge recombination in the abrupt junction, respectively. Electroluminescence spectra are compared with the micro-photoluminescence spectra taken along the single p-, n- and single nanowire pn-junctions to find the origin of the electroluminescence peaks, the distribution of doping species and the sharpness of the junctions.

  18. Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

    NASA Astrophysics Data System (ADS)

    Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

    2016-12-01

    An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

  19. Effect of Sb composition on the conduction type and photoluminescence of heavily Sn-doped GaAs1-xSbx

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Jinbo, Y.; Uchitomi, N.

    2006-09-01

    Heavily Sn-doped GaAs1-xSbx epitaxial films were grown on SI-GaAs (001) substrates by solid source molecular beam epitaxy. A 5 nm-thick AlSb buffer layer was employed to relax the lattice mismatch between the epilayer and the substrate. X-ray diffraction (XRD), Hall effect measurements and photoluminescence measurements were performed to characterize the epitaxial films. The heavily Sn-doped GaAs1-xSbx / AlSb films with x 0.24 indicated n-type conduction while the epitaxial films with x 0.43 indicated p-type conduction.

  20. Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes

    NASA Astrophysics Data System (ADS)

    Varpula, Aapo; Timofeev, Andrey V.; Shchepetov, Andrey; Grigoras, Kestutis; Hassel, Juha; Ahopelto, Jouni; Ylilammi, Markku; Prunnila, Mika

    2017-06-01

    We present thermal detectors based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into a heater area supported by narrow n- and p-doped beams, which also operate as a thermocouple. The electro-thermal characterization of the devices reveals a noise equivalent power of 13 pW/Hz1/2 and a thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The performance enables fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.

  1. Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems

    NASA Astrophysics Data System (ADS)

    Kuznicki, Z. T.; Basta, M.

    2010-05-01

    Investigation of some light-matter interactions in Multi-Interface Novel Devices (MIND) containing a nanoscale Si-layered system have led to a method for predicting free-carrier density dependent nonlinear optical properties as a function of doping, light excitation intensity and carrier injection. The approach is based on the well-known t-matrix approximation. A simplified a few-layer optical model has been constructed that will reproduce the main features/parameters of real systems. The degree of model and simulation self-consistency is discussed using basic physical functions and published experimental data. Near perfect agreement between the simulated model and the corresponding experimental results has been obtained. In this way, the simulation allowed us to determine the main origins/components of the strong optical nonlinearity characteristic of one of the most specific MIND behaviours.

  2. Optical absorption by free holes in heavily doped GaAs

    NASA Technical Reports Server (NTRS)

    Huberman, M. L.; Ksendzov, A.; Larsson, A.; Terhune, R.; Maserjian, J.

    1991-01-01

    Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

  3. Optical absorption by free holes in heavily doped GaAs

    NASA Astrophysics Data System (ADS)

    Huberman, M. L.; Ksendzov, A.; Larsson, A.; Terhune, R.; Maserjian, J.

    1991-07-01

    Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

  4. Ytterbium fibre laser with a heavily Yb{sup 3+}-doped glass fibre core

    SciTech Connect

    Bufetov, Igor' A; Semenov, S L; Kosolapov, A F; Mel'kumov, Mikhail A; Dudin, V V; Dianov, Evgenii M; Galagan, B I; Denker, B I; Osiko, Vyacheslav V; Sverchkov, S E

    2006-03-31

    The use of optical fibres with a high concentration of active ions in the fibre core allows the reduction of the active fibre length and the increase in the threshold powers of various nonlinear effects in the fibre, thereby increasing the maximum output power of fibre lasers. For this purpose, we manufactured a highly concentrated ytterbium-doped ({approx}1.0x10{sup 21}cm{sup -3}) phosphate glass for the active fibre core and a pure glass of a similar composition for the fibre cladding. A single-mode fibre is fabricated from these glasses and generation is obtained in an ytterbium laser based on this fibre with the slope efficiency of no less than 60% at a wavelength of 975 nm. (letters)

  5. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

    DOE PAGES

    Shi, Hongliang; Ming, Wenmei; Parker, David S.; ...

    2017-05-11

    The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S2σ/τ (with respect to an average unknownmore » scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.« less

  6. Physicochemical characterization of point defects in fluorine doped tin oxide films

    SciTech Connect

    El Akkad, Fikry; Joseph, Sudeep

    2012-07-15

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (F{sub O}) in presence of high concentration of oxygen vacancies (V{sub O}) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the V{sub O} concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the F{sub O} concentration and a decrease in both n and V{sub O} concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO{sub 2} matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine F{sub O} and tin vacancy V{sub Sn} defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a V{sub Sn} through the migration of Sn{sub Sn} host atom to the fluoride phase is approximately 0.45 eV.

  7. Physicochemical characterization of point defects in fluorine doped tin oxide films

    NASA Astrophysics Data System (ADS)

    Akkad, Fikry El; Joseph, Sudeep

    2012-07-01

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (FO) in presence of high concentration of oxygen vacancies (VO) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the VO concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the FO concentration and a decrease in both n and VO concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO2 matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine FO and tin vacancy VSn defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a VSn through the migration of SnSn host atom to the fluoride phase is approximately 0.45 eV.

  8. Thermodynamic and kinetic studies of laser thermal processing of heavily boron-doped amorphous silicon using molecular dynamics

    NASA Astrophysics Data System (ADS)

    Wang, Liguo; Clancy, Paulette; Thompson, Michael O.; Murthy, Cheruvu S.

    2002-09-01

    Laser thermal processing (LTP) has been proposed as a means to avoid unwanted transient enhanced diffusion and deactivation of dopants, especially boron and arsenic, during the formation of ultrashallow junctions. Although experimental studies have been carried out to determine the efficacy of LTP for pure Si and lightly B-doped junctions, the effects of high concentrations of dopants (above 2% B) on the thermodynamic and kinetic properties of the regrown film are unknown. In this study, a classical interatomic potential model [Stillinger-Weber (SW)] is used with a nonequilibrium molecular dynamics computer simulation technique to study the laser thermal processing of heavily B-doped Si in the range 2-10 at. % B. We observe only a small effect of boron concentration on the congruent melting temperature of the B:Si alloy, and thus the narrowing of the "process window" for LTP is predicted to be small. No significant tendency for boron to segregate was observed at either the regrowth front or the buried c-Si interface during fast regrowth. The B-doped region regrew as defect-free crystal with full activation of the boron atoms at low boron concentrations (2%), in good agreement with experiments. As the concentration of boron increased, the number of intrinsic Si defects and boron interstitials in the regrown materials increased, with a minor amount of boron atoms in clusters (<2%). An instability limit for crystal regrowth was observed at around 8%-10% boron atoms during fast regrowth; systems with 10% B showed partial amorphization during regrowth. Comparison with tight-binding quantum mechanical calculations showed that the SW model gives similar diffusivities in the liquid and tendency to cluster, but the lifetimes of the SW clusters are considerably too long (>150 ps, compared to 5 ps in tight binding). The importance of adequate system size is discussed.

  9. Spectral and luminescent properties of forsterite single crystals heavily doped with chromium: I. Absorption spectra

    SciTech Connect

    Lebedev, V F; Gaister, A V; Zharikov, Evgeny V; Tenyakov, S Yu; Levchenko, A E; Dianov, Evgenii M

    2003-03-31

    The polarisation absorption spectra of forsterite single crystals grown from a melt containing from 0.015 to 0.97 wt% of chromium are studied. Most of the crystals were grown by the Czochralski method under standard oxidation conditions (1.4-2.4 vol % of oxygen). Some crystals were grown in the atmosphere with a higher content of oxygen ({approx}12 vol %) or in the neutral atmosphere (100% of Ar). Crystals grown from a melt containing more than 0.6 wt % of chromium exhibited the saturation of absorption of Cr{sup 4+} ions. The maximum absorption coefficient of Cr{sup 4+} ions at 1064 nm was {approx}3.2 cm{sup -1}. The relative content of Cr{sup 3+} ions also increased (approximately by 70% in the range studied) with increasing the doping level. The relative content of Cr{sup 3+} ions in a crystal grown in the atmosphere with a high content of oxygen ({approx}12 vol %) was approximately lower by a factor of 1.5 than that in a crystal grown in the standard oxidation atmosphere. (active media)

  10. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    PubMed

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  11. Hydrothermal synthesis and characterization of fluorine & manganese co-doped PZT based cuboidal shaped powder

    NASA Astrophysics Data System (ADS)

    Nawaz, H.; Shuaib, M.; Saleem, M.; Rauf, A.; Aleem, A.

    2016-08-01

    Cuboidal shaped PZT powder particles based composition Pb0.89(Ba, Sr)0.11(Zr0.52Ti0.48)O3 co- doped with 1 mol% manganese and 2 mol% fluorine was prepared through hydrothermal route. 200-250nm size cuboidal particles were observed under FE-SEM. XRD technique revealed that the perovskite type ceramic structure has a dominant rhombohedral phase. The resultant powder particles were then spray dried, uniaxially pressed and sintered at different temperatures to achieve maximum theoretical density. 98% density was obtained in the pellets at a sintering temperature of 1190°C with an average grain size of 1-3um. The electrical properties of sintered samples were also measured before and after poling to evaluate the effect of dopants on piezoelectric properties.

  12. Er-doped mode-locked fiber laser with WS2/fluorine mica (FM) saturable absorber

    NASA Astrophysics Data System (ADS)

    Li, Lu; Wang, Yonggang; Wang, Xi; Yang, Guowen; Jiang, Shouzhen; Li, Zhen; Man, Baoyuan; Wang, Yishan

    2017-05-01

    The report presents conventional soliton operation in an anomalous-dispersion fiber laser with a novel WS2 saturable absorber (SA) based on fluorine mica (FM) substrate. Compared to organic host material such as polymer composite, FM has higher softening temperature, heat dissipation and laser damage threshold. In this work, the modulation depth (MD) and non-saturable loss (NL) of WS2/FM SA are measured to be 3.1% and 15%, respectively. By employing the SA, a stable conventional soliton mode-locked fiber laser is achieved. The repetition rate is 8.2 MHz and the pulse duration is 830 fs. The fiber laser works in mode locking operation for at least ten days and no damage of the SA is observed. The results indicate that WS2/FM material is an ideal SA for Er-doped fiber (EDF) lasers.

  13. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    PubMed Central

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-01-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm−3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g−1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems. PMID:26415838

  14. Spectral and luminescent properties of forsterite single crystals heavily doped with chromium: II. Luminescence

    SciTech Connect

    Lebedev, V F; Tenyakov, S Yu; Dianov, Evgenii M; Gaister, A V; Zharikov, Evgeny V

    2003-03-31

    The polarised luminescence spectra of forsterite single crystals grown from a melt containing from 0.015 to 0.97 wt% of chromium are studied. Most of the crystals were grown by the Czochralski method under standard oxidation conditions (1.4-2.4 vol% of oxygen). Some crystals were grown in the atmosphere with a higher content of oxygen ({approx}12 vol%) or in the neutral atmosphere (100% of Ar). The luminescence of Cr{sup 4+} ions excited to the {sup 3}T{sub 2} level at 980 nm and to the {sup 3}T{sub 1} level at 632.8 nm exhibited no quenching over the entire range of crystal doping. In crystals absorbing above 70% of laser energy, the self-absorption of luminescence of Cr{sup 4+} ions was observed. The reabsorption of luminescence of Cr{sup 3+}(2) ions located in sites of the forsterite crystal with the mirror symmetry occurs stronger because of a greater overlap of the luminescence band of Cr{sup 3+}(2) ions with the absorption bands of Cr{sup 4+} ions. The luminescence of Cr{sup 4+} ions is found to be polarised predominantly along the b axis for any polarisation of exciting radiation. The broadband luminescence of Cr{sup 3+}(2) ions is polarised predominantly along the c axis for all the crystals studied, irrespective of the polarisation of exciting radiation and the oxygen concentration in the crystal-growth atmosphere. The luminescence of Cr{sup 3+}(2) ions polarised along the c, b, and a axes has maxima at {approx}900, 860, and 850 nm, respectively. (active media)

  15. Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    NASA Astrophysics Data System (ADS)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-07-01

    Correction for `Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

  16. Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films.

    PubMed

    Cordova, Isvar A; Peng, Qing; Ferrall, Isa L; Rieth, Adam J; Hoertz, Paul G; Glass, Jeffrey T

    2015-07-28

    Correction for 'Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

  17. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    NASA Astrophysics Data System (ADS)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  18. Fluorine-doped Fe(2)O(3) as high energy density electroactive material for hybrid supercapacitor applications.

    PubMed

    Karthikeyan, Kaliyappan; Amaresh, Samuthirapandian; Lee, Sol Nip; Aravindan, Vanchiappan; Lee, Yun Sung

    2014-03-01

    Nanostructured α-Fe2 O3 with and without fluorine substitution were successfully obtained by a green route, that is, microwave irradiation. The hematite phase materials were evaluated as a high-performance electrode material in a hybrid supercapacitor configuration along with activated carbon (AC). The presence of fluorine was confirmed through X-ray photoelectron spectroscopy and transmission electron microscopy. Fluorine-doped Fe2 O3 (F-Fe2 O3 ) exhibits an enhanced pseudocapacitive performance compared to that of the bare hematite phase. The F-Fe2 O3 /AC cell delivered a specific capacitance of 71 F g(-1) at a current density of 2.25 A g(-1) and retained approximately 90 % of its initial capacitance after 15 000 cycles. Furthermore, the F-Fe2 O3 /AC cell showed a very high energy density of about 28 W h kg(-1) compared to bare hematite phase (∼9 W h kg(-1) ). These data clearly reveal that the electrochemical performance of Fe2 O3 can be improved by fluorine doping, thereby dramatically improving the energy density of the system. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. [Study on the absorption spectrum properties of flexible black silicon doped with sulfur and fluorine based on first-principles].

    PubMed

    Wei, Wei; Zhu, Yong; Lin, Cheng; Tian, Li; Xu, Zu-Wen; Nong, Jin-Peng

    2014-04-01

    It is quite urgent to need a flexible photodetector in the ultraviolet-visible-near infrared region for building a miniaturization broadband spectrometer. In the present paper, one kind of flexible black silicon doped with sulfur and fluorine was proposed and the optical absorption spectrum was investigated in broadband region. Firstly, the electronic structure, band structure and the optical absorption properties of the flexible black silicon doped with sulfur and fluoride were calculated using the first-principles pseudo potential calculations based on density-functional theory. Then, the absorption spectrum model of the flexible black silicon was built based on both the first-principles and finite domain time difference method. The results show that the cut-off wavelength has a red shift as the band gap of doped material becomes narrower. The higher the doping concentration is, the higher the optical absorption coefficient is obtained. The absorption coefficient of flexible black silicon doped with 50% sulfur is 8.3 times higher than that of 1.5% sulfur doping sample at the wavelength of 1 500 nm while the ratio turns to be 3 times when doped with 50% and 1.5% fluoride. The black silicon with small-size surface microstructure has the highest absorptance in the near-infrared region at the same doping concentration of 50%. Finally, a sample of flexible black silicon was fabricated by the femtosecond laser auto scanning system. The test results indicate that the absorptance of the sample is higher than 95% both in the ultraviolet and visible region and is fluctuated from 70% to 80% in the near-infrared region. It shows that as a novel light-absorbing material in broadband region the flexible black silicon doped with Sulfur and Fluorine has an potential application in exploring miniaturization broadband spectroscopy.

  20. Doping Evolution of the Superconducting Gap Structure in Heavily Hole-Doped Ba1-xKxFe2As2: a Heat Transport Study

    NASA Astrophysics Data System (ADS)

    Hong, Xiao-Chen; Wang, Ai-Feng; Zhang, Zhen; Pan, Jian; He, Lan-Po; Luo, Xi-Gang; Chen, Xian-Hui; Li, Shi-Yan

    2015-12-01

    We performed systematic thermal conductivity measurements on heavily hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals with 0.747 $\\leq x \\leq$ 0.974. At $x$ = 0.747, the $\\kappa_0/T$ is negligible, indicating nodeless superconducting gap. A small residual linear term $\\kappa_0/T$ ($\\approx$ 0.035 mW/K$^2$ cm) appears at $x$ = 0.826, and it increases slowly up to $x$ = 0.974, followed by a drastic increase of more than 20 times to the pure KFe$_2$As$_2$ ($x$ = 1.0). This doping dependence of $\\kappa_0/T$ clearly shows that the nodal gap appears near $x = 0.8$, likely associated with the change of Fermi surface topology. The small values of $\\kappa_0/T$ from $x$ = 0.826 to 0.974 support a "$\\curlyvee$"-shaped nodal $s$-wave gap recently revealed by angle-resolved photoemission spectroscopy experiments at $x$ = 0.9. Furthermore, the drastic increase of $\\kappa_0/T$ from $x$ = 0.974 to 1.0 is inconsistent with a symmetry-imposed $d$-wave gap in KFe$_2$As$_2$, and the possible nodal gap structure in KFe$_2$As$_2$ is discussed.

  1. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    SciTech Connect

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-24

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10{sup −3} Ω-cm, carrier concentration 1.79×10{sup 20} cm{sup 3} and the mobility 7 cm{sup 2}/Vs.

  2. Electron scattering mechanisms in fluorine-doped SnO{sub 2} thin films

    SciTech Connect

    Rey, G. Consonni, V.; Bellet, D.; Ternon, C.; Mescot, X.

    2013-11-14

    Polycrystalline fluorine-doped SnO{sub 2} (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 · 10{sup −4} Ω cm (square sheet resistance of 8 Ω/◻) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained.

  3. Substrate temperature effect on the photophysical and microstructural properties of fluorine-doped tin oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Abideen, Ibiyemi; Gbadebo, Yusuf; Abass, Faremi

    2017-07-01

    Transparent conducting oxide of fluorine-doped tin oxide (FTO) thin films was deposited from chemical solutions of tin chloride and ammonium fluoride using streaming process for electroless and electrochemical deposition (SPEED) at substrate temperature 450, 500, and 530 °C respectively. The effect of substrate temperatures on the microstructural properties such as crystallite size, dislocation density, micro strain, volume of the unit cell, volume of the nanoparticles, number of the unit cell, bond length and the lattice constants were examined using XRD technique. Only reflections from (110) and (200) planes of tetragonal SnO2 crystal structure were obvious. The peaks are relatively weak indicating that the deposited materials constitute grains in the nano dimension. Hall measurements, which were done using van der Pauw technique, showed that the FTO films are n-type semiconductors. The most favorable electrical values were achieved for the film grown at 530 °C with low resistivity of 7.64 × 10-4Ω·cm and Hall mobility of -9.92 cm2/(V·s).

  4. Optoelectrochemical biorecognition by optically transparent highly conductive graphene-modified fluorine-doped tin oxide substrates.

    PubMed

    Lamberti, F; Brigo, L; Favaro, M; Luni, C; Zoso, A; Cattelan, M; Agnoli, S; Brusatin, G; Granozzi, G; Giomo, M; Elvassore, N

    2014-12-24

    Both optical and electrochemical graphene-based sensors have gone through rapid development, reaching high sensitivity at low cost and with fast response time. However, the complex validating biochemical operations, needed for their consistent use, currently limits their effective application. We propose an integration strategy for optoelectrochemical detection that overcomes previous limitations of these sensors used separately. We develop an optoelectrochemical sensor for aptamer-mediated protein detection based on few-layer graphene immobilization on selectively modified fluorine-doped tin oxide (FTO) substrates. Our results show that the electrochemical properties of graphene-modified FTO samples are suitable for complex biological detection due to the stability and inertness of the engineered electrodic interface. In addition, few-layer immobilization of graphene sheets through electrostatic linkage with an electrochemically grafted FTO surface allows obtaining an optically accessible and highly conductive platform. As a proof of concept, we used insulin as the target molecule to reveal in solution. Because of its transparency and low sampling volume (a few microliters), our sensing unit can be easily integrated in lab-on-a-chip cell culture systems for effectively monitoring subnanomolar concentrations of proteins relevant for biomedical applications.

  5. Nitrogen, Phosphorus, and Fluorine Tri-doped Graphene as a Multifunctional Catalyst for Self-Powered Electrochemical Water Splitting.

    PubMed

    Zhang, Jintao; Dai, Liming

    2016-10-10

    Electrocatalysts are required for clean energy technologies (for example, water-splitting and metal-air batteries). The development of a multifunctional electrocatalyst composed of nitrogen, phosphorus, and fluorine tri-doped graphene is reported, which was obtained by thermal activation of a mixture of polyaniline-coated graphene oxide and ammonium hexafluorophosphate (AHF). It was found that thermal decomposition of AHF provides nitrogen, phosphorus, and fluorine sources for tri-doping with N, P, and F, and simultaneously facilitates template-free formation of porous structures as a result of thermal gas evolution. The resultant N, P, and F tri-doped graphene exhibited excellent electrocatalytic activities for the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER). The trifunctional metal-free catalyst was further used as an OER-HER bifunctional catalyst for oxygen and hydrogen gas production in an electrochemical water-splitting unit, which was powered by an integrated Zn-air battery based on an air electrode made from the same electrocatalyst for ORR. The integrated unit, fabricated from the newly developed N, P, and F tri-doped graphene multifunctional metal-free catalyst, can operate in ambient air with a high gas production rate of 0.496 and 0.254 μL s(-1) for hydrogen and oxygen gas, respectively, showing great potential for practical applications.

  6. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

    2015-11-01

    We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

  7. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  8. N-type Self-Doping of Fluorinate Conjugated Polyelectrolytes for Polymer Solar Cells: Modulation of Dipole, Morphology, and Conductivity.

    PubMed

    Liu, Huimin; Huang, Liqiang; Cheng, Xiaofang; Hu, Aifeng; Xu, Haitao; Chen, Lie; Chen, Yiwang

    2017-01-11

    For the conjugated polyelectrolytes (CPEs) interlayers, many studies focus on the modulation of interfacial dipoles in the polymer solar cells (PSCs) by altering the side polar groups but usually ignore the functions of conjugated backbone engineering (CBE) through the delicate design to improve their functions. Herein, novel alcohol-soluble CPEs by incorporation of fluorinate benzene onto the backbone, namely PFf1B and PFf4B, have been synthesized to modulate the interfacial dipoles and charge mobility. A favorable bidipole composed of ion-induced dipole and F hydrogen bond-induced dipole was discovered to be responsible for the tunable work function of indium tin oxide (ITO) electrode. Moreover, a desirable nanowires morphology of the upper active layer has also been obtained with the help of the self-assembly of fluorinated CPEs. More intriguingly, an unusual n-type doping favored by fluorine-induced electron transfer (FIET) was observed in these CPEs, leading to the improvement in the electron mobility. As a consequence, these fluorinated CPEs were demonstrated with a general application in the PSCs based on various active layers. Note that PFf4B with the highest loading of F atoms can work efficiently in a thickness of up to 31.8 nm, which broke the thickness limitation of most reported CPEs interlayer.

  9. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

    PubMed Central

    Koh, Weon-kyu; Koposov, Alexey Y.; Stewart, John T.; Pal, Bhola N.; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2013-01-01

    Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter- and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states. PMID:23774224

  10. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

    DOE PAGES

    Koh, Weon-kyu; Koposov, Alexey Y.; Stewart, John T.; ...

    2013-06-18

    Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. In this paper, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmedmore » by inter- and intra-band optical absorption, as well as by carrier dynamics. In conclusion, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.« less

  11. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

    SciTech Connect

    Koh, Weon-kyu; Koposov, Alexey Y.; Stewart, John T.; Pal, Bhola N.; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2013-06-18

    Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. In this paper, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter- and intra-band optical absorption, as well as by carrier dynamics. In conclusion, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.

  12. Temperature behavior of sound velocity of fluorine-doped vitreous silica thin films studied by picosecond ultrasonics

    NASA Astrophysics Data System (ADS)

    Nagakubo, A.; Ogi, H.; Ishida, H.; Hirao, M.; Yokoyama, T.; Nishihara, T.

    2015-07-01

    Vitreous silica (v-SiO2) shows anomalous temperature dependence of velocity, including positive temperature coefficient of velocity (TCV) and velocity minimum around 70 K. The former characteristic allows its application in acoustic-resonator devices as a temperature compensating material. In this paper, we study the temperature dependence of velocity of fluorine-doped v-SiO2 (v-SiO2-xFx) thin films using picosecond ultrasonic spectroscopy. To correct the temperature increase caused by irradiation with light pulses, we calculated the steady temperature increase in the measuring volume with a finite volume method, considering the temperature dependence of thermal conductivity, and find that temperature in the measurement region remains high even when the back surface is cryogenically cooled. Using the corrected temperature, we determine TCV of v-SiO2-xFx thin films for 0 < x < 0.264 , which increases as x increases and is smaller than reported bulk values by a factor of 0.5 - 0.7 . The velocity minimum is absent for the film with x = 0, but it is clearly observed at 70 K for the film with the highest fluorine concentration of x = 0.264. These temperature behaviors are attributed to the change in the Si-O-Si bond angle caused by the fluorine doping.

  13. Solid-state chemical synthesis of rod-like fluorine-doped β-Bi2O3 and their enhanced photocatalytic property under visible light

    NASA Astrophysics Data System (ADS)

    Liang, Zhiting; Cao, Yali; Li, Yizhao; Xie, Jing; Guo, Nana; Jia, Dianzeng

    2016-12-01

    The pure β-Bi2O3 and fluorine-doped β-Bi2O3 rod-like microstructures were successfully prepared by a facile solid-state chemical reaction process. The composition, structure and morphology of the samples were determined by XRD, EDS, SEM, TEM, HRTEM, XPS and PL. Photocatalytic activities of all samples were investigated via the degradation of methyl orange (MO) under the irradiation of visible light. The fluorine-doped β-Bi2O3 rods exhibited higher photocatalytic activities than the pure β-Bi2O3 rod-like structures and commercial sample. The 82% MO can be degraded by the fluorine-doped β-Bi2O3 rods after irradiation for 2 h under visible light, which is 2-3 times higher than that of counterparts. The enhanced properties of the fluorine-doped samples attribute to their higher separation efficiency of electron-hole pairs and strong oxidation potential of valance band holes. The results show that the as-prepared rod-like fluorine-doped β-Bi2O3 materials are potential candidates for photocatalysts irradiated by visible light.

  14. Enhanced violet photoemission of nanocrystalline fluorine doped zinc oxide (FZO) thin films

    NASA Astrophysics Data System (ADS)

    Anusha, Muthukumar; Arivuoli, D.; Manikandan, E.; Jayachandran, M.

    2015-09-01

    Highly stable fluorine doped nanocrystalline zinc oxide thin films were prepared on corning glass substrates by aerosol assisted chemical vapor deposition (AACVD) at variable deposition temperature of 360 °C, 380 °C and 420 °C. Especially, the optimum deposition temperature was investigated for high intense violet emission. The film crystallinity improved with the increasing deposition temperature and highly textured film was obtained at 420 °C. The films exhibited surface morphology variation from spherical to platelets due to deposition temperature effect, analyzed by field emission scanning electron microscope (FE-SEM). Higher growth rate observed at 420 °C which leads larger grains and lowest resistivity of ∼5.77 Ω cm among the deposited films which may be due to reduction in zinc vacancies and grain boundary area. Zinc vacancies are acts as electron killer centres. UV-visible spectra indicated higher transmittance (83-90%) in the visible region. Red shift of optical absorption edges associated with the increase in particle size consistent well with the XRD results. Reduced E2(high) intensity was observed in Raman spectra, for the film deposited at 380 °C which indicates decreased oxygen incorporation confirmed by PL spectra. Especially, enhanced violet emission observed at 3.06 eV for the films deposited at 380 °C due to electronic transition from the defect level of zinc vacancies to the conduction band, probably attributed to enhanced incorporation of 'F' into 'O' sites associated with increased Zn vacancies and also decreased oxygen incorporation consistent with the electrical and Raman analyses.

  15. Enhancing the photocatalytic activity of nanocrystalline TiO{sub 2} by co-doping with fluorine and yttrium

    SciTech Connect

    Zhang, Huarong; Miao, Guashuai; Ma, Xingping; Wang, Bei; Zheng, Haiwu

    2014-07-01

    Highlights: • (F, Y)-codoped TiO{sub 2} nanoparticles were prepared by a simple sol–gel method. • The highest photocatalytic activity (15 times of that over the pure TiO{sub 2}) was exhibited in the codoped TiO{sub 2} with 0.05% Y doping level. • The Y doping induced oxygen vancancies played a duel role on the photocatalyic activity of the codoped TiO{sub 2}. • The photocatalytic reactive oxygen species are critical to the photocatalytic degradation processes. - Abstract: Fluorine and yttrium codoped TiO{sub 2} nanoparticles were prepared using a simple sol–gel method. The products were characterized with various spectroscopic and analytical techniques to determine their structural, morphological, optical absorption and photocatalytic properties. The results reveal that neither F nor Y doping causes obvious absorption edge shift in TiO{sub 2}. Photoluminescence (PL) emission spectra present that the PL signal is enhanced, suggesting a decrease of photo-generated charge carrier separation efficiency, after the F or Y doping. The synergistic action by the F and Y doping leads to the highest photocatalytic activity for the degradation of methylene blue solution in the 0.05% (F, Y)-codoped sample (15 times of that over the pure TiO{sub 2}). With the increase of Y doping level, the photocatalytic performance in the codoped samples increases firstly and then decreases. The photocatalytic activity variations after the F and Y doping were interpreted by the formation of photocatalytic reactive oxygen species induced by the dopings.

  16. Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure

    NASA Astrophysics Data System (ADS)

    Yasuda, Arata; Takahashi, Yatsuhiro; Suto, Ken; Nishizawa, Jun-ichi

    2017-07-01

    We propose the use of heavily impurity-doped Pb1-xSnxTe/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV-VI compounds for mid- to far-infrared optical device applications. A flat surface morphology and the distribution of a constant Sn concentration for 0.05 ≤ x ≤ 0.33 were observed in the epitaxial layers using electron-probe microanalysis. The segregation coefficient of Sn in Pb1-xSnxTe grown via TDM-CVP LPE (Tg = 640 °C) was xSSn?xLSn = 0.28. The appearance of the Fermi level pinning and persistent photoconductivity effects in In-doped PbSnTe were also proposed; we estimated that the activation energies of these processes were 2.8 and 39.7 meV, respectively, based on the In-doped Pb1-xSnxTe carrier profile as a function of ambient temperature. In Hall mobility measurements, Sn was assumed to be a main scattering center in the Pb1-xSnxTe epitaxial crystals. The impurity effect was also observed in Pb1-xSnxTe epitaxial growth, similar to the effects observed for Tl-doped PbTe bulk crystals. We concluded that the heavily doped Pb1-xSnxTe crystals grown via TDM-CVP LPE can be used to fabricate high-performance mid- to far-infrared optical devices.

  17. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Imura, Masataka; Tsuda, Shunsuke; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2017-03-01

    To evaluate the polarity, energy band diagram, and oxygen (O) distribution of a heavily Mg-doped InN (InN:Mg+) epilayer with a Mg concentration of 1.0 ± 0.5 × 1020 cm-3, the core-level and valence band (VB) photoelectron spectra are investigated by angle-resolved soft and hard X-ray photoelectron spectroscopies. The InN:Mg+ epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. In this doping level, the polarity inversion from In-polar to N-polar occurs with the increase in the Mg flow rate under the same growth conditions, and the VB spectrum clearly indicates the direction of polarity of InN:Mg+, which is N-polar. The energy band diagram is considered to exhibit a two-step downward bending structure due to the coexistence of the n+ surface electron accumulation layer and heavily Mg-doped p+ layer formed in the bulk. The O concentration rapidly increases until ˜4 nm with respect to the surface, which is deduced to be one of the reasons of the formation of the anomalous two-step energy band profile.

  18. Effect of hydrostatic pressure and alloy composition on sulfur- and selenium-related impurity states in heavily doped n-type GaxIn1-xSb

    NASA Astrophysics Data System (ADS)

    Zitouni, K.; Kadri, A.; Aulombard, R. L.

    1986-08-01

    The properties of sulfur- and selenium-related impurity states have been studied as a function of pressure and composition in heavily doped GaxIn1-xSb. Hall-coefficient and electrical-resistivity measurements were made under hydrostatic pressures of up to 25 kbar, in the alloy composition range 0.30<~x<~0.78 and in the temperature range 77 K<~T<~300 K. In both S-doped and Se-doped samples, the results show the existence of an impurity level forming a localized resonance in the Γ1c band continuum. At x=0.78 and P=0 kbar, the resonance lay ~130+/-10 meV and ~180+/-10 meV above the Γ1c band edge in S-doped and Se-doped samples, respectively. As x decreased, the resonance remained almost fixed with respect to the top of the valence band. As the pressure increased, the impurity level was driven into the fundamental gap, independently of nearby band edges, thus demonstrating ``deep-level behavior.'' Furthermore, the pressure-induced occupation of this impurity level led to time-dependent effects at T<~110 K. The activated thermal electron emission over a potential barrier gave clear evidence for a large lattice relaxation around the impurity centers. These results show the dominant effect of the local non-Coulombic component of the impurity potential, suggesting the complex nature of the impurity centers.

  19. Effects of annealing on the microstructures and photoactivity of fluorinated N-doped TiO2.

    PubMed

    Liu, Shengwei; Yu, Jiaguo; Wang, Wenguang

    2010-10-14

    We investigated the effects of annealing in air on fluorinated N-doped TiO(2) (F/N-TiO(2)) photocatalysts prepared by hydrothermal process. The textural properties (specific surface areas) and surface properties (surface defect density, surface [triple bond]Ti-F density) were significantly modified upon annealing. In contrast, due to the shielding effect of surface fluorination, the phase transformation from anatase to rutile as well as removal of N-dopants during annealing was greatly inhibited. The evolution of the chemical nature of doped nitrogen species upon annealing in air was investigated and correlated with the generation and annihilation of oxygen deficiency. The defect density dominated the visible-light absorption and production of active ˙OH. The textural properties and the surface characteristics were crucial for UV-light photocatalytic performance, while the visible-light photocatalytic activity was mainly associated with the defect density. The 300 °C-annealed F/N-TiO(2) sample showed considerable photocatalytic activity under both UV and visible-light irradiation.

  20. Mid-infrared Fano resonance in heavily doped silicon and metallic nanostructures due to coupling of Wood-Rayleigh anomaly and surface plasmons

    NASA Astrophysics Data System (ADS)

    Nguyen-Huu, N.; Cada, M.; Ma, Y.; Che, F.; Pistora, J.; Yasumoto, K.; Ma, Y.; Lin, J.; Maeda, H.

    2017-05-01

    This study reports the design and analysis of a plasmonic sensor based on a heavily doped silicon and metallic grating structure working in the mid-infrared region. The numerical results show that the reflection spectrum of the phosphorous-doped Si grating structure with a dopant concentration of 1  ×  2020 has a sharp asymmetric Fano resonance dip, which is strongly dependent on the refractive index change in the surroundings. It yields a sensitivity of 8000 nm/RIU (refractive index unit) and 950 nm/RIU working in the air and water media, respectively, very high values compared with that of existing devices. Moreover, the Fano resonance caused by coupling of the Wood-Rayleigh anomaly and surface plasmon resonances is demonstrated by calculating the magnetic field and Poynting vector patterns. Further, a feasible and easy fabrication process of the sensor featuring high performance is represented.

  1. Textured fluorine-doped tin dioxide films formed by chemical vapour deposition.

    PubMed

    Bhachu, Davinder S; Waugh, Mathew R; Zeissler, Katharina; Branford, Will R; Parkin, Ivan P

    2011-10-04

    The use of an aerosol delivery system enabled fluorine-doped tin dioxide films to be formed from monobutyltin trichloride methanolic solutions at 350-550 °C with enhanced functional properties compared with commercial standards. It was noted that small aerosol droplets (0.3 μm) gave films with better figures of merit than larger aerosol droplets (45 μm) or use of a similar precursor set using atmospheric pressure chemical vapour deposition (CVD) conditions. Control over the surface texturing and physical properties of the thin films were investigated by variation in the deposition temperature and dopant concentration. Optimum deposition conditions for low-emissivity coatings were found to be at a substrate temperature of about 450 °C with a dopant concentration of 1.6 atm% (30 mol% F:Sn in solution), which resulted in films with a low visible light haze value (1.74%), a high charge-carrier mobility (25 cm(2) V s(-1)) and a high charge-carrier density (5.7×10(20) cm(-3)) resulting in a high transmittance across the visible (≈80%), a high reflectance in the IR (80% at 2500 nm) and plasma-edge onset at 1400 nm. Optimum deposition conditions for coatings with applications as top electrodes in thin film photovoltaics were found to be a substrate temperature of about 500 °C with a dopant concentration of 2.2 atm% (30 mol% F:Sn in solution), which resulted in films with a low sheet resistance (3 Ω sq(-1)), high charge-carrier density (6.4×10(20) cm(-3)), a plasma edge onset of 1440 nm and the films also showed pyramidal surface texturing on the micrometer scale which corresponded to a high visible light haze value (8%) for light scattering and trapping within thin film photovoltaic devices. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Influence of doping fluorine on the structural, surface morphological and optical properties of CdO films

    NASA Astrophysics Data System (ADS)

    Aydogu, S.; Coban, M. B.; Cabuk, G.

    2017-06-01

    CdO and CdO:F films were prepared by ultrasonic spray pyrolysis method on glass substrates at temperature of 250 ± 5 °C. The structural and optical properties of pure and fluorine doped CdO films were characterized by XRD measurements and UV-VIS spectra, respectively. X-ray diffraction patterns show that the films have the polycrystalline structure with preferred orientation along (111) plane. Scherrer Method and Williamson Hall Method were used for calculating of the crystalline grains and strains of films. It is observed that the films at 8% F doped has better crystallinity level, and F doping decreases the defects in CdO films and improves crystallite quality. By UV-VIS spectra, it is revealed that the film with 8% F doped has a high transmittance about 65% in the visible region together with a direct band gap of 2.70 eV. Thicknesses, refractive indices and extinction coefficient values are determined by spectroscopic ellipsometry technique using Cauchy-Urbach model.

  3. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  4. Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

    PubMed Central

    Seo, Jin-Suk; Jeon, Jun-Hyuck; Hwang, Young Hwan; Park, Hyungjin; Ryu, Minki; Park, Sang-Hee Ko; Bae, Byeong-Soo

    2013-01-01

    Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm2/V·s and stable characteristics under the various gate bias and temperature stresses. PMID:23803977

  5. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  6. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  7. Improved visible light photocatalytic activity of fluorine and nitrogen co-doped TiO2 with tunable nanoparticle size

    NASA Astrophysics Data System (ADS)

    Cheng, Junyang; Chen, Jin; Lin, Wei; Liu, Yandong; Kong, Yan

    2015-03-01

    Fluorine and nitrogen co-doped TiO2 (F-N-TiO2) photocatalysts with enhanced photocatalytic activities were facilely synthesized by a simple one-step hydrothermal method using Ti(SO4)2 as an economical precursor, and hydrofluoric acid and ammonia as F and N source, respectively. The structure, morphology, and optical properties of produced nanoparticles were characterized by X-ray diffraction (XRD), N2 adsorption, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectra (FT-IR) methods. The synergistic effects of F and N doping were systematically examined by changing the molar ratio of F/N. Compared with the un-doped F or N mono-doped TiO2, the co-doped samples exhibited significantly improved photocatalytic performance due to their synergistic effects under visible light. It was shown that F dopant promoted the crystal growth and crystallinity of samples, while N dopant hindered it to some extent, which resulted in the tunable particle size of obtained F-N-TiO2 materials. The effects of F and N dopants on the enhanced photocatalytic activity of modified TiO2 materials were also discussed. The degradation rate of methylene blue (MB) was achieved at 97.31% after 5 h reaction under visible light over the optimized sample of FN3.5T. The materials also showed excellent stability according to the recycling tests of the photodegradation of MB.

  8. Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium

    NASA Astrophysics Data System (ADS)

    Keskenler, E. F.; Turgut, G.; Doğan, S.

    2012-07-01

    Undoped ZnO film and ZnO films, which are co-doped with F and In (FIZO) at different concentrations, were synthesized by sol-gel technique and the effects of co-doping of F and In on structural and optical properties of ZnO thin films were investigated. The concentration ratio of [F]/[Zn] was altered from 0.25 to 1.75 with 0.50 step at.% mole and [In]/[Zn] was altered from 0.25 to 1.00 with 0.25 step at.% mole. X-ray diffraction analysis indicates that the films have polycrystalline nature and the (0 0 2) preferred orientation is the stronger peak. No extra phases involving zinc, fluorine and indium compounds were observed even at high F and In content. The grain size of undoped ZnO and FIZO thin films varied between 15 and 20 nm with a small fluctuation. From the SEM images, although the undoped ZnO had a smooth and particle-shaped surface, FIZO films had nanofiber-networks shapes over the surface with average size of 500 nm. The surface morphologies and crystallite sizes for the F and In doped films were slightly different from than those of undoped film. From the optical study, a slight shrinkage of band gap was backwardly observed from 3.36 to 3.25 eV with the increasing of F and In content.

  9. Structural, mechanical and hydrophobic properties of fluorine-doped diamond-like carbon films synthesized by plasma immersion ion implantation and deposition (PIII?D)

    NASA Astrophysics Data System (ADS)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Sun, H.; Wang, J.

    2004-05-01

    Fluorine-doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by plasma immersion ion implantation and deposition (PIII-D). Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method. With the increase of the CF 4 flux, fluorine content was gradually increased to the film. Raman spectra indicates that these films have a diamond-like structure. The addition of fluorine to diamond-like carbon films had a critical influence on the film properties. The film surface becomes more smoother due to the etching behavior of F +. Hardness was significantly reduced, while the scratch resistance results show that these films have a fairly good adhesion to the substrate. Evident improvements of the hydrophobicity have been made to these films, with contact angles of double-stilled water approaching that of polytetrafluoroethylene (PTFE). Our study suggests that broad application regions of the fluorine-doped amorphous carbon films with diamond-like structure, synthesized by PIII-D, can be extended by combining the non-wetting properties and mechanical properties which are far superior to those of PTFE.

  10. Evolution of the band structure of superconducting NaFeAs from optimally doped to heavily overdoped Co substitution using angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Cui, S. T.; Zhu, S. Y.; Wang, A. F.; Kong, S.; Ju, S. L.; Luo, X. G.; Chen, X. H.; Zhang, G. B.; Sun, Z.

    2012-10-01

    Using angle-resolved photoemission spectroscopy, we studied the evolution of electronic structure of NaFe1-xCoxAs from an optimally doped superconducting compound (x=0.028) to a heavily overdoped nonsuperconducting one (x=0.109). As in “122”-type iron pnictides, our data suggest that the Co dopant in NaFe1-xCoxAs supplies extra charge carriers and shifts the Fermi level accordingly. The overall band renormalization remains basically the same throughout the doping range we studied, suggesting that the local magnetic and electronic correlations are not affected by carrier doping. In the x=0.109 compound, the holelike bands around the zone center Γ move to deeper binding energies and an electron pocket appears instead, resulting in a Fermi surface topology similar to that of AxFe2-ySe2 (A=K, Cs, Rb, Tl). Our data suggest that a balance between itinerant properties of mobile carriers and local interactions plays an important role for the superconductivity in these materials.

  11. Luminescent properties of fluorine phosphate glasses doped with PbSe and PbS quantum dots

    NASA Astrophysics Data System (ADS)

    Kolobkova, Elena; Lipatova, Zhanna; Abdrshin, Albert; Nikonorov, Nikolay

    2017-03-01

    Optical properties of the PbS/PbSe molecular clusters (MCs) and PbS/PbSe quantum dots (QDs) in fluorine phosphate glasses were studied. Luminescence of MCs (excited by UV radiation) was obtained in visible spectral region and it's absolute quantum yield was up to 10%. It was found, that PbS QDs with sizes 3 nm, 3.5 nm and 4.9 nm demonstrate strong luminescence at 970, 1300 and 1500 nm with Stokes shift 80 -50 meV. PbSe QDs with sizes 2.5, 2.6, 3.0, 3,7 and 5.1 nm have strong luminescence at 1050, 1100, 1300, 1500 and 1650 nm with Stokes shift 355-60 meV. Glasses doped with PbS(Se) QDs provide potential as robust materials for broadband optic amplifiers.

  12. Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Antony, Albin; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Douayar, A.; Cherkaoui El Moursli, F.; Sanjeev, Ganesh; Manjunatha, K. B.; Poornesh, P.

    2017-10-01

    Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.

  13. Chlorinated fluorine doped tin oxide electrodes with high work function for highly efficient planar perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Deng, Li; Xie, Jiale; Wang, Baohua; Chen, Tao; Li, Chang Ming

    2017-06-01

    Perovskite solar cells (PSCs) demonstrate excellent high efficiencies over 20% and potential for a highly scalable manufacturing process. The work function of a transparent electrode (e.g., fluorine doped tin oxide, FTO) plays a critical role in the extraction and collection of electrons in PSCs. In this work, a chlorinated FTO (Cl-FTO) electrode with a high work function is used to fabricate a planar PSC at a low temperature of 100 °C with an optimal efficiency of 13.39% for a great improvement of 49% than plain FTO based cells. The change in the work function of FTO and Cl-FTO can reach up to 0.6 eV. The enhancement scientific insight is further explored, indicating that the increased work function of Cl-FTO provides well-matched energy levels between FTO and the CH3NH3PbI3 active material, facilitating the electron extraction and collection.

  14. Gamma-ray radiation response at 1550 nm of fluorine-doped radiation hard single-mode optical fiber.

    PubMed

    Kim, Youngwoong; Ju, Seongmin; Jeong, Seongmook; Lee, Seung Ho; Han, Won-Taek

    2016-02-22

    We have investigated gamma-ray radiation response at 1550 nm of fluorine-doped radiation hard single-mode optical fiber. Radiation-induced attenuation (RIA) of the optical fiber was measured under intermittent gamma-ray irradiations with dose rate of ~10 kGy/h. No radiation hardening effect on the RIA by the gamma-ray pre-dose was found when the exposed fiber was bleached for long periods of time (27~47 days) at room-temperature. Photo-bleaching scheme upon 980 nm LD pumping has proven to be an effective deterrent to the RIA, particularly by suppressing the incipient RIA due to room-temperature unstable self-trapped hole defects (STHs). Large temperature dependence of the RIA of the optical fiber together with the photo-bleaching effect are worthy of note for reinforcing its radiation hard characteristics.

  15. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    NASA Astrophysics Data System (ADS)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  16. Photosensitivity of heavily GeO{sub 2}-doped fibres in the near UV range between 300 and 350 nm

    SciTech Connect

    Dianov, Evgenii M; Rybaltovsky, A A; Semenov, S L; Gur'yanov, A N; Khopin, V F

    2006-02-28

    The photosensitivity of a fibre doped with GeO{sub 2} with a molar concentration of 97% is studied in the near-UV region. It is found that the refractive index induced in this fibre exposed to low-intensity (150 W cm{sup 2}) radiation at wavelengths of 305.5 and 333.6 nm achieves a high value ({approx}1.5x10{sup 3}). It is shown that the photosensitivity increases with decreasing the irradiation wavelength. (optical fibres and waveguides)

  17. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    SciTech Connect

    Pereira, L. M. C.; Wahl, U.; Correia, J. G.; Decoster, S.; Vantomme, A.; Silva, M. R. da; Araujo, J. P.

    2011-05-16

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of {beta}{sup -} emission channeling from the decay of {sup 56}Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400 deg. C, with an activation energy for diffusion of 1.7-2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga{sub 1-x}Mn{sub x}As.

  18. Extreme anisotropy and anomalous transport properties of heavily electron doped Lix(NH3)yFe2Se2 single crystals

    NASA Astrophysics Data System (ADS)

    Sun, Shanshan; Wang, Shaohua; Yu, Rong; Lei, Hechang

    2017-08-01

    We report the growth of heavily electron doped Li-NH3 intercalated FeSe single crystals that are free of material complexities and allow access to the intrinsic superconducting properties. Lix(NH3)yFe2Se2 single crystals show extremely large electronic anisotropy in both normal and superconducting states. They also exhibit anomalous transport properties in the normal state, which are believed to possibly be related to the anisotropy of relaxation time and/or temperature-dependent electron carrier concentration. Taking into account the great chemical flexibility of intercalants in the system, our findings provide a platform to understanding the origin of superconductivity in FeSe-related superconductors.

  19. On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process

    SciTech Connect

    Hu, Q. C.; Ding, K. Zhang, J. Y.; Yan, F. P.; Pan, D. M.; Huang, F.; Chiou, J. W.

    2014-01-13

    We have investigated the variations of optical property and electronic structure in heavily Al-doped ZnO (AZO) films during the growth process, which were formed by first creating Zn vacancies in O{sub 2}-rich atmosphere and second filling the vacancies with Zn atoms in Zn-vapor atmosphere. After the first step, the high-resistance AZO films have the same optical bandgap with nominally undoped ZnO, indicating that negligible variations in the fundamental bandgap happened to the AZO films although Al atom was incorporated into the ZnO lattice. After the second step, once free electrons were brought into the lattice by Zn-filling, the optical transition energy blueshifts due to the band-filling effect. X-ray absorption fine structure measurements suggest that Zn-filling process decreased the unoccupied states of the conduction band, but not raised the conduction band minimum.

  20. The Effect of Fluorine Doping on the Characteristic Behaviour of CdTe

    NASA Astrophysics Data System (ADS)

    Ojo, A. A.; Dharmadasa, I. M.

    2016-11-01

    Fluorine which is an n-type dopant of cadmium telluride thin films was included during growth from a cadmium nitrate [Cd(NO3)2·4H2O] bath using an electrodeposition technique. The fluorine concentration in the Cd(NO3)2·4H2O baths were varied between 0.5 ppm and 50 ppm in order to determine its effect on the optical, structural, morphological and electrical properties of the as-deposited and the post-growth-treated layers. These characterisations were carried out using x-ray diffraction, ultraviolet-visible spectrophotometry, scanning electron microscopy, energy dispersive x-rays spectroscopy, photoelectrochemical cell measurement, direct current conductivity measurement and fully fabricated device characterisation. The results are systematically reported in this paper.

  1. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    SciTech Connect

    Yan, Di Cuevas, Andres

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  2. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    PubMed Central

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S. -K.; Kim, C.; Kim, Y. K.

    2016-01-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3. PMID:27050161

  3. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal.

    PubMed

    Seo, J J; Kim, B Y; Kim, B S; Jeong, J K; Ok, J M; Kim, Jun Sung; Denlinger, J D; Mo, S-K; Kim, C; Kim, Y K

    2016-04-06

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3.

  4. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    SciTech Connect

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S. -K.; Kim, C.; Kim, Y. K.

    2016-04-06

    A superconducting transition temperature (T c ) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO 3 . The discovery ignited efforts to identify the mechanism for the markedly enhanced T c from its bulk value of 8 K. There are two main views about the origin of the T c enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO 3 . Without interfacial effects, the surface layer state has a moderate T c of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum T c , which in turn reveals the need for interfacial effects to achieve the highest T c in one monolayer FeSe on SrTiO 3 .

  5. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    DOE PAGES

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; ...

    2016-04-06

    A superconducting transition temperature (T c ) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO 3 . The discovery ignited efforts to identify the mechanism for the markedly enhanced T c from its bulk value of 8 K. There are two main views about the origin of the T c enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO 3 .more » Without interfacial effects, the surface layer state has a moderate T c of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum T c , which in turn reveals the need for interfacial effects to achieve the highest T c in one monolayer FeSe on SrTiO 3 .« less

  6. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  7. Influence of excess SrO on the thermoelectric properties of heavily doped SrTiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Wang, Yifeng; Wan, Chunlei; Zhang, Xiaoyan; Shen, Liming; Koumoto, Kunihito; Gupta, Arunava; Bao, Ningzhong

    2013-05-01

    The effects of excess SrO on the thermoelectric properties of n-type SrTiO3 have been investigated through a comparative study of different polycrystalline ceramic samples. These include Gd-doped SrTiO3 with varying SrO, nominally in the form of Ruddlesden-Popper phase of SrO(SrTiO3)n with n = 5, 10, and 20, and previously reported analogues with n = 1, 2, and ∞ (i.e., stoichiometric SrTiO3). As compared with stoichiometric SrTiO3, with increasing SrO excess (i.e., decreasing n value), the electrical conductivity is found to decrease more substantially than the thermal conductivity, while the Seebeck coefficient remains almost unaffected with n in the range of 5-20.

  8. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

    SciTech Connect

    Ager, J.W. III; Walukiewicz, W.; McCluskey, M. ); Plano, M.A.; Landstrass, M.I. )

    1995-01-30

    A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 10[sup 21] cm[sup [minus]3]. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states.

  9. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  10. Optical and photocatalytic properties of heavily F(-)-doped SnO2 nanocrystals by a novel single-source precursor approach.

    PubMed

    Kumar, Vinod; Govind, A; Nagarajan, R

    2011-06-20

    Heavily F-doped SnO(2) nanocrystals were successfully prepared by a novel synthetic approach involving low-temperature oxidation of a Sn(2+)-containing fluoride complex KSnF(3) as the single-source precursor with H(2)O(2). The F-doped SnO(2) powder was characterized by powder X-ray diffraction, TG-MS, BET surface area, diffuse reflectance spectroscopy, XPS, PL, FTIR spectroscopy, Raman spectroscopy, EPR spectroscopy, SEM, and TEM. Broadening of the diffracted peaks, signifying the low crystallite size of the products, was quite evident in the powder X-ray diffraction pattern of SnO(2) obtained from KSnF(3). It was indexed in a tetragonal unit cell with lattice constants a = 4.7106 (1) Å and c = 3.1970 (1) Å. Agglomeration of particles, with an average diameter of 5-7 nm, was observed in the TEM images whose spotwise EDX analysis indicated the presence of fluoride ions. In the core level high-resolution F 1s spectrum, the peak observed at 685.08 eV was fitted by the Gaussian profile yielding the fluoride ion concentration to be 21.23% in the SnO(2) lattice. Such a high fluoride ion concentration is reported for the first time in powders. SnO(2):F nanocrystals showed greater thermal stability up to 300 °C when heated in a thermobalance under flowing helium, after which generation of small quantities of HF was observed in the TG coupled mass spectrometry analysis. The band gap value, estimated from the Kubelka-Munk function, showed a large shift from 3.52 to 3.87 eV on fluoride ion doping, as observed in the diffuse reflectance spectrum. Such a large shift was corroborated to the overdoped situation due to the Moss-Burstein effect with an increase in the carrier concentration. In the photoluminescence (PL) spectrum, SnO(2):F nanocrystals exhibited a broad green emission arising from the singly ionized oxygen vacancies created due to higher dopant concentration. The evidence for singly ionized vacancies was arrived from the presence of a signal with a g value of 1

  11. Characterization of Heavily Doped ALUMINUM(X)GALLIUM(1 -X)ARSENIDE:TELLURIUM Grown on Semi-Insulating Gallium-Arsenide

    NASA Astrophysics Data System (ADS)

    Malloy, Kevin John

    The ability to dope a semiconductor into near metallic conduction widens its usefulness as a material and thereby permits the construction of new devices. Aluminum Gallium Arsenide is no exception. Heavily doped n-type Aluminum Gallium Arsenide has important device applications in tandem junction solar cells and in high electron mobility transistors. Aluminum Gallium Arsenide heavily doped with Tellurium was grown on semi-insulating Gallium Arsenide using liquid phase epitaxy. It was found that the addition of 0.4 atomic percent Tellurium to the melt reduced the Aluminum content of solid Aluminum Gallium Arsenide by up to 20 percent. A model was offered for this behavior involving a differential in the degree of association between Aluminum-Tellurium and Gallium-Tellurium in the liquid phase epitaxial melt. The electrical properties of n-type Aluminum Gallium Arsenide grown on semi-insulating Gallium Arsenide were modeled as a two sheet conductor. The two conductors consisted of the epitaxial n-type Aluminum Gallium Arsenide layer and the induced two dimensional electron gas present at the n-type Aluminum Gallium Arsenide-Gallium Arsenide heterojunction. This model showed the two dimensional electron gas as responsible for the constant low temperature carrier concentration observed experimentally. It also successfully explained the observation of a slope equal to the donor ionization potential instead of the donor ionization potential divided by two in the plot of the log of the carrier concentration versus reciprocal temperature. Because of the chemically independent nature of the deep donor ionization potential in Aluminum Gallium Arsenide, a minima interaction model was introduced to describe the donor level. The major matrix elements were determined to be V(,LX) = 4mV (+OR-) 1mV and V(,LL) = 40mV (+OR-) 10mV. These minima interaction matrix elements were an order of magnitude larger than suggested by theory, thus indicating the possible non-coulombic nature of

  12. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    SciTech Connect

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-20

    REBa2Cu3Ox superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (Jc) above 20 MA/cm2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the Jc typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m3 have also been attained at 20 K. A composition map of lift factor in Jc (ratio of Jc at 30 K, 3 T to the Jc at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 × 1011 cm–2 as well as 2–3nm sized particles rich in Cu and Zr have been found in the high Jc films.

  13. Orbital and Pauli limiting effects in heavily doped Ba0.05K0.95Fe2As2

    NASA Astrophysics Data System (ADS)

    Zhang, S.; Singh, Y. P.; Huang, X. Y.; Chen, X. J.; Dzero, M.; Almasan, C. C.

    We investigated the thermodynamic properties of the Fe-based lightly-disordered superconductor Ba0.05K0.95Fe2As2 in external magnetic field H applied along the FeAs layers (H||ab planes). The superconducting (SC) transition temperature for this doping level is Tc = 6.6 K. Our analysis of the specific heat C(T,H) measured for T

  14. Nitrogen and fluorine dual-doped mesoporous graphene: a high-performance metal-free ORR electrocatalyst with a super-low HO2(-) yield.

    PubMed

    Jiang, Shu; Sun, Yujing; Dai, Haichao; Hu, Jingting; Ni, Pengjuan; Wang, Yilin; Li, Zhen; Li, Zhuang

    2015-06-28

    In this study, we successfully, for the first time, prepared nitrogen and fluorine dual-doped mesoporous graphene (NF-MG) via the thermal treatment of graphene oxide/polyaniline composites (GO/PANI) and NH4F. Benefiting from the synergistic effect of N and F co-doping into the G framework, the oxygen reduction reaction performance of the optimal catalyst (NF-MG3) is comparable with the-state-of-the-art Pt/C catalyst in an alkaline medium, which makes it an ideal candidate as an efficient metal-free ORR electrocatalyst in fuel cells.

  15. Impact of carbon-fluorine doped titanium dioxide in the performance of an electrochemical sensing of dopamine and rosebengal sensitized solar cells

    NASA Astrophysics Data System (ADS)

    C, Abinaya; Dinesh, Bose; Sangari, M.; Ramar, A.; Umadevi, M.; Mayandi, J.

    2015-01-01

    The role of Fluorine and Carbon as dopants in the TiO2 based electrochemical sensor and DSSC were presented in this work. A series of Carbon nano-cones and disc doped TiO2 (TC), Fluorine doped TiO2 (FT) and C & F co-doped TiO2 (CFT) powdered samples were prepared via solid state synthesis. The CFT film showed excellent electrochemical sensitivity to the oxidation of dopamine in aqueous solution and could be employed as a dopamine sensor. The proposed sensor exhibited good linear response in the range of 10-820 μM with a detection limit of 3.6 μM under optimum conditions. The photovoltaic performances of Rose Bengal sensitized solar cells were assessed through I-V measurements. The CFT based DSSC shows a short-circuit current density and a power conversion efficiency (η) of 0.908 mA/cm2 and 0.163% respectively, which is 35% and 38% greater than the performance of other PT based cells. The characterization studies such as UV-Visible spectroscopy, Photoluminescence, TEM and EPR spectroscopy were utilized for further investigation, which helps us to understand how fluorine and carbon play a part in dopamine sensing and solar energy conversion.

  16. A facile one-step electrochemical strategy of doping iron, nitrogen, and fluorine into titania nanotube arrays with enhanced visible light photoactivity.

    PubMed

    Hua, Zulin; Dai, Zhangyan; Bai, Xue; Ye, Zhengfang; Gu, Haixin; Huang, Xin

    2015-08-15

    Highly ordered iron, nitrogen, and fluorine tri-doped TiO2 (Fe, (N, F)-TiO2) nanotube arrays were successfully synthesized by a facile one-step electrochemical method in an NH4F electrolyte containing Fe ions. The morphology, structure, composition, and photoelectrochemical property of the as-prepared nanotube arrays were characterized by various methods. The photoactivities of the samples were evaluated by the degradation of phenol in an aqueous solution under visible light. Tri-doped TiO2 showed higher photoactivities than undoped TiO2 under visible light. The optimum Fe(3+) doping amount at 0.005M exhibited the highest photoactivity and exceeded that of undoped TiO2 by a factor of 20 times under visible light. The formation of N 2p level near the valence band (VB) contributed to visible light absorption. Doping fluorine and appropriate Fe(3+) ions reduced the photogenerated electrons-holes recombination rate and enhanced visible light photoactivity. The X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) results indicated the presence of synergistic effects in Fe, N, and F tri-doped TiO2, which enhanced visible light photoactivity. The Fe, (N, F)-TiO2 photocatalyst exhibited high stability.

  17. Fluorine-doped carbon nanotubes as an efficient metal-free catalyst for destruction of organic pollutants in catalytic ozonation.

    PubMed

    Wang, Jing; Chen, Shuo; Quan, Xie; Yu, Hongtao

    2017-09-27

    Metal-free carbon materials have been presented to be potential alternatives to metal-based catalysts for heterogeneous catalytic ozonation, yet the catalytic performance still needs to be enhanced. Doping carbon with non-metallic heteroatoms (e.g., N, B, and F) could alter the electronic structure and electrochemical properties of original carbon materials, has been considered to be an effective method for improving the catalytic activity of carbon materials. Herein, fluorine-doped carbon nanotubes (F-CNTs) were synthesized via a facile method and characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The as-synthesized F-CNTs exhibited notably enhanced catalytic activity towards catalytic ozonation for the degradation of organic pollutants. The oxalic acid removal efficiency of optimized F-CNTs was approximately two times as much as that of pristine CNTs, and even exceeded those of four conventional metal-based catalysts (ZnO, Al2O3, Fe2O3, and MnO2). The XPS and Raman studies confirmed that the covalent CF bonds were formed at the sp(3) C sites instead of sp(2) C sites on CNTs, not only resulting in high positive charge density of C atoms adjacent to F atoms, but remaining the delocalized π-system with intact carbon structure of F-CNTs, which then favored the conversion of ozone molecules (O3) into reactive oxygen species (ROS) and contributed to the high oxalic acid removal efficiency. Furthermore, electron spin resonance (ESR) studies revealed that superoxide radicals (O2(-)) and singlet oxygen ((1)O2) might be the dominant ROS that responsible for the degradation of oxalic acid in these catalytic systems. Copyright © 2017 Elsevier Ltd. All rights reserved.

  18. Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

    SciTech Connect

    Einollahzadeh-Samadi, Motahareh; Dariani, Reza S.

    2015-03-15

    In this work, a detailed study of the influence of the thickness on the morphological and optical properties of titanium (Ti) thin films deposited onto rough fluorine-doped tin oxide glass by d.c. magnetron sputtering is carried out. The films were characterized by several methods for composition, crystallinity, morphology, and optical properties. Regardless of the deposition time, all the studied Ti films of 400, 1500, 2000, and 2500 nm in thickness were single crystalline in the α-Ti phase and also very similar to each other with respect to composition. Using the atomic force microscopy (AFM) technique, the authors analyzed the roughness evolution of the Ti films characteristics as a function of the film thickness. By applying the dynamic scaling theory to the AFM images, a steady growth roughness exponent α = 0.72 ± 0.02 and a dynamic growth roughness exponent β = 0.22 ± 0.02 were determined. The value of α and β are consistent with nonlinear growth model incorporating random deposition with surface diffusion. Finally, measuring the reflection spectra of the samples by a spectrophotometer in the spectral range of 300–1100 nm allowed us to investigate the optical properties. The authors observed the increments of the reflection of Ti films with thickness, which by employing the effective medium approximation theory showed an increase in thickness followed by an increase in the volume fraction of metal.

  19. The effect of laser patterning parameters on fluorine-doped tin oxide films deposited on glass substrates

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau

    2011-08-01

    The purpose of this study is to pattern the fluorine-doped tin oxide thin film deposited on the soda-lime glass substrates for touch screen applications by ultraviolet laser. The patterned film structures provide the electrical isolation and prevent the electrical contact from each region for various touch screens. The surface morphology, edge quality, three-dimensional topography, and profile of isolated lines and electrode structures after laser patterning were measured by a confocal laser scanning microscope. Moreover, a four-point probe instrument was used to measure the sheet resistance before and after laser patterning on film surfaces and also to discuss the electrical property at different laser spot overlaps. After laser patterning, a high overlapping area of laser spot was used to pattern the electrode layer on film surfaces that could obtain an excellent machined quality of edge profile. All sheet resistance values of film surfaces near the isolated line edge were larger than the original ones. Moreover, the sheet resistance values increased with increasing laser spot overlapping area.

  20. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect

    Untila, G. G. Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A.

    2013-03-15

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  1. Optical, Electrical, and UV Photoresponse Properties of Fluorine-Doped ZnO Thin Films Grown on Flexible Mica Substrates

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Leem, Jae-Young

    2015-12-01

    Fluorine-doped ZnO (FZO) thin films have several potential applications, for instance, in low-cost optoelectronic devices; understanding how their optical, electrical, and photoresponse properties depend on and can be controlled via the synthesis conditions is essential for application of these systems. In this study, FZO thin films with different annealing temperatures were grown on muscovite mica substrates via sol-gel spin-coating. In photoluminescence measurements, a strong peak in the ultraviolet (UV) region and a broad peak in the visible region were observed for all films, being strongly dependent on the annealing temperature. The transmittance of the annealed films was slightly higher than that of as-grown film, and the absorption edges in the transmittance spectra red-shifted with increasing annealing temperature. The optical bandgap and Urbach energy of the films were calculated from the absorption coefficient values, using the Tauc and Urbach relations, respectively. Finally, the electrical (i.e., resistivity and carrier concentration) and photoresponse properties of the films were investigated to assess their applicability for use in FZO-based UV detectors.

  2. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    PubMed

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  3. Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain

    NASA Astrophysics Data System (ADS)

    Lin, Zer-Ming; Lin, Horng-Chih; Huang, Tiao-Yuan

    2012-06-01

    In this study, we explore the operation of operation a novel asymmetric Schottky-barrier transistor (ASSBT) through using technology computer aided design (TCAD). The new ASSBT features a silicided Schottky-barrier (SB) source, with the channel and drain made of heavily n-doped silicon. By eliminating the SB drain junction contained in conventional symmetrical-type SB metal-oxide-semiconductor field-effect transistors (MOSFETs), a larger on-state current is achievable. Moreover, combined with the adoption of fully depleted thin-film channel, the off-state leakage current can be efficiently suppressed as well. In addition, we also comprehensively analyze the transport mechanisms dominating in different operational regions of this new ASSBT. A pseudo-subthreshold region that shows worse subthreshold swing (SS) than the subthreshold region is identified. A decrease in channel and/or gate oxide thicknesses can contribute to the improvement of the SS of this region. A modified form of scaling length (λ) is also introduced to describe the impacts of structural parameters and gate configurations on the SS characteristics of this new ASSBT.

  4. Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

    SciTech Connect

    Min, Won Ja; Park, Kyungsu; Yu, Kyu-Sang; Joo, Sungjung; Kim, Yong-Sung; Moon, Dae Won

    2015-10-07

    Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si}) complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.

  5. Nitrogen and fluorine dual-doped mesoporous graphene: a high-performance metal-free ORR electrocatalyst with a super-low HO2- yield

    NASA Astrophysics Data System (ADS)

    Jiang, Shu; Sun, Yujing; Dai, Haichao; Hu, Jingting; Ni, Pengjuan; Wang, Yilin; Li, Zhen; Li, Zhuang

    2015-06-01

    In this study, we successfully, for the first time, prepared nitrogen and fluorine dual-doped mesoporous graphene (NF-MG) via the thermal treatment of graphene oxide/polyaniline composites (GO/PANI) and NH4F. Benefiting from the synergistic effect of N and F co-doping into the G framework, the oxygen reduction reaction performance of the optimal catalyst (NF-MG3) is comparable with the-state-of-the-art Pt/C catalyst in an alkaline medium, which makes it an ideal candidate as an efficient metal-free ORR electrocatalyst in fuel cells.In this study, we successfully, for the first time, prepared nitrogen and fluorine dual-doped mesoporous graphene (NF-MG) via the thermal treatment of graphene oxide/polyaniline composites (GO/PANI) and NH4F. Benefiting from the synergistic effect of N and F co-doping into the G framework, the oxygen reduction reaction performance of the optimal catalyst (NF-MG3) is comparable with the-state-of-the-art Pt/C catalyst in an alkaline medium, which makes it an ideal candidate as an efficient metal-free ORR electrocatalyst in fuel cells. Electronic supplementary information (ESI) available: Experimental details (Scheme S1), optimization and morphology of NF-MGs catalysts (Fig. S1-S2), Fig. S3-S9, and Tables S1-S2. See DOI: 10.1039/c5nr01793a

  6. Corrosion behavior and biocompatibility of strontium and fluorine co-doped electrodeposited hydroxyapatite coatings

    NASA Astrophysics Data System (ADS)

    Huang, Yong; Ding, Qiongqiong; Pang, Xiaofeng; Han, Shuguang; Yan, Yajing

    2013-10-01

    To improve the corrosion resistance and biocompatibility of biomedical titanium, strontium (Sr) and fluorine (F) were simultaneously incorporated in hydroxyapatite (HAp) to form SrFHAp coating on titanium (Ti) via electrodeposition. The microstructure, phase composition, corrosion resistance, and cytocompatibility of the films were studied. Results revealed that by incorporating F- and Sr2+ ions in HAp, the density of the coating markedly increased, i.e., a lower porosity than common HAp coating. The SrFHAp layer was dense and uniform, with nano-needle-like crystals of apatite, which aligned vertically to the substrate. The SrFHAp crystals were calcium-deficient apatite, and Sr2+ ions and F- ions were homogeneously distributed in the coating. The SrFHAp coating showed lower dissolution rate than HA coating. Potentiodynamic polarization test manifested that the SrFHAp-coated titanium exhibited superior corrosion resistance than HAp single-coated sample. In addition, osteoblasts cellular tests revealed that the SrFHAp coating was more effective to improve the in vitro biocompatibility of Ti compared with HAp coating.

  7. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    SciTech Connect

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-03-15

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C.

  8. Synthesis and characterization of one-dimensional nanostructured fluorine-doped tin dioxide thin films

    NASA Astrophysics Data System (ADS)

    Murakami, Kenji; Bandara, Ajith; Okuya, Masayuki; Shimomura, Masaru; Rajapakse, R. M. G.

    2016-09-01

    This paper describes preparation and characterization of the optically-transparent and electrically conducting thin films of fluoride-doped tin dioxide (FTO) one-dimensional nanostructures and features of the purpose-built, novel and advanced version of spray pyrolysis technique, known as Rotational, Pulsed and Atomized Spray Pyrolysis. This technique allows perfect and simple control of morphology of the nanostructures of FTO layer by adjusting the spray conditions. Effect of the different additives on crystal morphology and texture of the 1-dimensional (1-D) nanostructured FTO thin films is studied. Vertically aligned and well separated nanotubes are easily fabricated using propanone and ethanol as additives. We suggest that propanone additive plays a role to form vertically aligned nanotubes with (101) preferential orientation while (110) face is the predominant plane of well separated nanotubes with ethanol additive. The conductivity of the 1-D nanostructured thin films are also enhanced using the commercial FTO glasses as a substrate.

  9. Visible light-driven photocatalytic degradation of the organic pollutant methylene blue with hybrid palladium-fluorine-doped titanium oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Lázaro-Navas, Sonia; Prashar, Sanjiv; Fajardo, Mariano; Gómez-Ruiz, Santiago

    2015-02-01

    The synthesis of mesoporous aggregates of titanium oxide nanoparticles (F0) is described using a very cheap and simple synthetic protocol. This consists of the reaction of titanium tetraisopropoxide and a solution of HNO3 in water (pH 2.0) and subsequent filtration. In addition, fluorine-doped titanium oxides (F1, F2, F5 and F10) were synthesized using the same method, adding increasing amounts of NaF to the reaction mixture (avoiding the use of expensive reagents such as NH4F or trifluoroacetic acid). The resulting materials were calcined at different temperatures (500, 600 and 650 °C) giving particles sized between 10 and 20 nm. Furthermore, a hybrid F-doped TiO2 with supported palladium nanoparticles of ca. 20 nm (F5-500-Pd1) was synthesized by grafting an organometallic palladium(II) salt namely [Pd(cod)Cl2] (cod = 1,5-cyclooctadiene). Photocatalytic studies of the degradation of methylene blue (MB) were carried out under UV light using all the synthesized material (non-doped an F-doped TiO2), observing that the increase in the quantity of fluorine has a positive effect on the photocatalytic activity. F5-500 is apparently the material which has the most convenient structural properties (in terms of surface area and anatase/rutile ratio) and thus a higher photocatalytic activity. The hybrid material F-doped TiO2-Pd nanoparticles (F5-500-Pd1) has a lower band gap value than F5-500, and thus photocatalytic degradation of MB under LED visible light was achieved using F5-500-Pd1 as photocatalyst.

  10. Full solution-processed synthesis of all metal oxide-based tree-like heterostructures on fluorine-doped tin oxide for water splitting.

    PubMed

    Yin, Zongyou; Wang, Zheng; Du, Yaping; Qi, Xiaoying; Huang, Yizhong; Xue, Can; Zhang, Hua

    2012-10-09

    Well-ordered tree-like functional heterostructures, composed of the environmentally friendly oxides ZnO, TiO(2) , and CuO, on a fluorine-doped tin oxide substrate are realized by a practical, cost-effective, solution-processable strategy. The heterostructures are demonstrated to be an efficient light-harvesting medium in a photo-electrochemical cell to split water for hydrogen-gas generation, and the developed strategy provides a highly promising, cheap, green way to fabricate multifunctional hierarchically branched structures for many potential applications.

  11. Water Oxidation and Oxygen Monitoring by Cobalt-Modified Fluorine-Doped Tin Oxide Electrodes

    SciTech Connect

    Kent, CA; Concepcion, JJ; Dares, CJ; Torelli, DA; Rieth, AJ; Miller, AS; Hoertz, PG; Meyer, TJ

    2013-06-12

    Electrocatalytic water oxidation occurs at fluoride-doped tin oxide (FTO) electrodes that have been surface-modified by addition of Co(II). On the basis of X-ray photoelectron spectroscopy and transmission electron microscopy measurements, the active surface site appears to be a single site or small-molecule assembly bound as Co(II), with no evidence for cobalt oxide film or cluster formation. On the basis of cyclic voltammetry measurements, surface-bound Co(II) undergoes a pH-dependent 1e(-)/1H(+) oxidation to Co(III), which is followed by pH-dependent catalytic water oxidation. O-2 reduction at FTO occurs at -0.33 V vs NHE, allowing for in situ detection of oxygen as it is formed by water oxidation on the surface. Controlled-potential electrolysis at 1.61 V vs NHE at pH 7.2 resulted in sustained water oxidation catalysis at a current density of 0.16 mA/cm(2) with 29 000 turnovers per site over an electrolysis period of 2 h. The turnover frequency for oxygen production per Co site was 4 s(-1) at an overpotential of 800 mV at pH 7.2. Initial experiments with Co(II) on a mesoporous, high-surface-area nanoFTO electrode increased the current density by a factor of similar to 5

  12. Low temperature red luminescence of a fluorinated Mn-doped zinc selenite.

    PubMed

    Orive, Joseba; Balda, Rolindes; Fernández, Joaquín; Lezama, Luis; Arriortua, María I

    2013-09-14

    M2(SeO3)F2 (M = Zn (1), Mn (2)) stoichiometric phases together with the Zn2-xMnx(SeO3)F2 compound doped at various concentrations (x = 0.002-0.2) were synthesized by employing mild hydrothermal conditions. These compounds have been characterized by scanning electron microscopy (SEM), Rietveld refinement of the X-ray powder diffraction patterns, ICP-Q-MS, thermogravimetric and thermodiffractometric analyses, and IR, UV/vis and electron paramagnetic resonance (EPR) spectroscopies. Compounds 1 and 2 crystallize in the orthorhombic Pnma space group with lattice parameters: a = 7.27903(4), b = 10.05232(6) and c = 5.26954(3) Å for the zinc species and a = 7.50848(9), b = 10.3501(12) and c = 5.47697(6) Å for the manganese phase, with Z = 4. The crystal structures of these compounds are isotypic and are built up from a 3D framework constructed by (010) sheets of [MO3F3] octahedra linked up by [SeO3] building units. Luminescence measurements of Mn2(SeO3)F2 were performed at different temperatures between 10 and 150 K. At 10 K, the emission spectrum consists of a broad band peaked at around 660 nm related to the (4)T1g→(6)A1g transition in octahedrically coordinated Mn(2+). Moreover, the influence of temperatures up to 295 K and the Mn concentration on the luminescent properties of the Zn2-xMnx(SeO3)F2 system were systematically studied. Magnetic measurements of 2 show antiferromagnetic coupling as the major interactions exhibiting a spin canting at low temperature.

  13. Electrical conduction behavior of organic light-emitting diodes using fluorinated self-assembled monolayer with molybdenum oxide-doped hole transporting layer.

    PubMed

    Park, Sang-Geon; Mori, Tatsuo

    2015-06-01

    The electrical conductivity behavior of a fluorinated self-assembled monolayer (FSAM) of a molybdenum oxide (MoOx)-doped α-naphthyl diamine derivative (α-NPD) in organic light-emitting diodes (OLEDs) was investigated. The current density of the MoOx-doped α-NPD/FSAM device was proportional to its voltage owing to smooth carrier injection through the FSAM and the high carrier density of its bulk. The temperature-dependent characteristics of this device were investigated. The current density-voltage characteristics at different temperatures were almost the same owing to its very low activation energy. The activation energy of the device was estimated to be 1.056 × 10(-2) [eV] and was very low due to the inelastic electron tunneling of FSAM molecules.

  14. Preparation of fluorine-doped, carbon-encapsulated hollow Fe3O4 spheres as an efficient anode material for Li-ion batteries.

    PubMed

    Geng, Hongbo; Zhou, Qun; Pan, Yue; Gu, Hongwei; Zheng, Junwei

    2014-04-07

    Herein we report the design and synthesis of fluorine-doped, carbon-encapsulated hollow Fe3O4 spheres (h-Fe3O4@C/F) through mild heating of polyvinylidene fluoride (PVDF)-coated hollow Fe3O4 spheres. The spheres exhibit enhanced cyclic and rate performances. The as-prepared h-Fe3O4@C/F shows significantly improved electrochemical performance, with high reversible capacities of over 930 mA h g(-1) at a rate of 0.1 C after 70 cycles, 800 mA h g(-1) at a rate of 0.5 C after 120 cycles and 620 mA h g(-1) at a rate of 1 C after 200 cycles. This improved lithium storage performance is mainly ascribed to the encapsulation of the spheres with fluorine-doped carbon, which not only improves the reaction kinetics and stability of the solid electrolyte interface film but also prevents aggregation and drastic volume change of the Fe3O4 particles. These spheres thus represent a promising anode material in lithium-ion battery applications.

  15. Fluorine-doped nanocrystalline SnO{sub 2} powders prepared via a single molecular precursor method as anode materials for Li-ion batteries

    SciTech Connect

    Ha, Hyung-Wook; Kim, Keon . E-mail: kkim@korea.ac.kr; Borniol, Mervyn de; Toupance, Thierry . E-mail: t.toupance@lcoo.u-bordeaux1.fr

    2006-03-15

    Fluorine-doped nanocrystalline tin dioxide materials (F:SnO{sub 2}) have been successfully prepared by the sol-gel process from a single molecular precursor followed by a thermal treatment at 450-650 deg. C. The resulting materials were characterized by FTIR spectroscopy, powder X-ray diffraction, nitrogen adsorption porosimetry (BET) and transmission electron microscopy (TEM). The mean particle size increased from 5 to 20 nm and the specific surface area decreased from 123 to 37 m{sup 2}/g as the temperature of heat treatment was risen from 450 to 650 deg. C. Fluorine-doped nanocrystalline SnO{sub 2} exhibited capacity of 560, 502, and 702 mA h/g with 48%, 50%, and 40% capacity retention after 25 cycles between 1.2 V and 50 mV at the rate of 25 mA/g, respectively. In comparison, commercial SnO{sub 2} showed an initial capacity of 388 mA h/g, with only 23% capacity retention after 25 cycles.

  16. Effect of solvent volume on the physical properties of undoped and fluorine doped tin oxide films deposited using a low-cost spray technique

    NASA Astrophysics Data System (ADS)

    Muruganantham, G.; Ravichandran, K.; Saravanakumar, K.; Ravichandran, A. T.; Sakthivel, B.

    2011-12-01

    Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance ( Rsh) of undoped SnO 2 film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in Rsh for higher values of solvent volume. Interestingly, it was observed that while the Rsh increases sharply with the increase in solvent volume for undoped SnO 2 films, it decreases gradually in the case of fluorine doped SnO 2 films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices.

  17. Origin of in Situ Domain Formation of Heavily Nb-Doped Pb(Zr,Ti)O3 Thin Films Sputtered on Ir/TiW/SiO2/Si Substrates for Mobile Sensor Applications.

    PubMed

    Han, Chan Su; Park, Kyu Sik; Choi, Hong Je; Cho, Yong Soo

    2017-06-07

    High-quality piezoelectric thin films have recently been in demand for mobile sensor applications. An investigation was conducted to understand the improvements in the piezoelectric and imprint characteristics of heavily Nb-doped lead zirconate titanate thin films with an extensive range of Nb content (up to 14 mol %) beyond the typical solid solubility limit of Nb. The positive effects produced by the unusual doping of Nb were realized by utilizing an in situ sputtering process that did not require a subsequent annealing and poling procedure. An enhanced piezoelectric coefficient, -e31, of -12.87 C/m(2) and a stronger shift in the coercive field, Ec,shift, of ∼20 kV/cm, which are ideally useful for mobile sensor applications, were obtained for the 12 mol % Nb-doped films deposited on nonconventional buffer electrodes of Ir/TiW. The reduced oxygen vacancy concentration and preferred domain orientation with a stronger piezoresponse induced by the Nb donor doping contributed to the enhancement of the piezoelectric properties. Potential defect dipoles aligned by a residual stress gradient along columnar structures seemed to induce an internal electric field in the Nb-doped films, leading to the preferred domain orientation, as well as the strong imprint behavior due to a clamping of domain walls.

  18. Photoelectrochemical characteristics of TiO2 nanorod arrays grown on fluorine doped tin oxide substrates by the facile seeding layer assisted hydrothermal method

    NASA Astrophysics Data System (ADS)

    Sui, Mei-rong; Han, Cui-ping; Gu, Xiu-quan; Wang, Yong; Tang, Lu; Tang, Hui

    2016-05-01

    TiO2 nanorod arrays (NRAs) were prepared on fluorine doped tin oxide (FTO) substrates by a facile two-step hydrothermal method. The nanorods were selectively grown on the FTO regions which were covered with TiO2 seeding layer. It took 5 h to obtain the compact arrays with the nanorod length of ~2 μm and diameter of ~50 nm. The photoelectrochemical (PEC) properties of TiO2 NRAs are also investigated. It is demonstrated that the TiO2 NRAs indicate the good photoelectric conversion ability with an efficiency of 0.22% at a full-wavelength irradiation. A photocurrent density of 0.21 mA/cm2 is observed at 0.7 V versus the saturated calomel electrode (SCE). More evidences suggest that the charge transferring resistance is lowered at an irradiation, while the flat-band potential ( V fb) is shifted towards the positive side.

  19. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    SciTech Connect

    Fukano, Tatsuo; Motohiro, Tomoyoshi; Ida, Takashi; Hashizume, Hiroo

    2005-04-15

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7 nm in average size show an ionization potential of 5.01 eV, as compared with {approx}4.76 and {approx}4.64 eV in ITO and FTO films, respectively, which decreases as the FTO particle size increases. The ionization potentials are practically invariant against oxidation and reduction treatments, promising a wide application of the films to transparent conducting oxide electrodes in organic electroluminescent devices and light-emitting devices of high efficiencies.

  20. Nitrogen plasma treatment of fluorine-doped tin oxide for enhancement of photo-carrier collection in amorphous Si solar cells

    NASA Astrophysics Data System (ADS)

    Baik, Seung Jae; Lim, Koeng Su

    2011-04-01

    Nitrogen plasma treatment was performed on fluorine-doped tin oxide (SnO2:F) front electrodes, and its impact on the performance of pin type amorphous Si (a-Si) solar cells was investigated. Nitrogen plasma treatment reverses the surface band bending of SnO2:F from accumulation to depletion, thus in turn reversing the band bending of the p type amorphous silicon carbide (p-a-SiC) window layer. The reversal of band bending leads to the collection of carriers generated in p-a-SiC, and quantum efficiency in the short wavelength regime is thereby enhanced. On the other hand, surface depletion of SnO2:F causes a reduction of the diode built-in voltage and increased series resistance, which could degrade the open circuit voltage (Voc) and fill factor (FF), the degradation of which is strongly affected by the deposition time of p-a-SiC.

  1. High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    1991-01-01

    Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

  2. Fabrication of Co3O4 mesoporous thin films by using cobalt/chitosan precursor on fluorine-doped tin oxide glass

    NASA Astrophysics Data System (ADS)

    Yang, Hui-Chia; Tsai, Jung-Che

    2017-06-01

    For the development of high-performance and low-cost electrode materials, many alternative materials have been fabricated by various groups. Among these materials, Co3O4 has been demonstrated to be a promising candidate for pseudocapacitors because of its low potential environmental pollution, low cost, and extremely high theoretical specific capacitance. Chitosan, a linear polysaccharide produced by the deacetylation of chitin, is a nontoxic, tissue-compatible polymeric biomaterial. It is usually used to eliminate or filter the heavy metals in wastewater. That is, chitosan can act as a deliverer of metal ions and a nanostructure constructer of metals (or metal oxides). In this study, a facile approach is developed to synthesize mesoporous cobalt oxide thin films on fluorine-doped tin oxide (FTO)-coated glass with environmentally friendly chitosan, which chelates cobalt ions.

  3. Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

    PubMed Central

    Liu, Lishu; Mei, Zengxia; Hou, Yaonan; Liang, Huili; Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Kuznetsov, Andrej; Du, Xiaolong

    2015-01-01

    N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 1019 F/cm3.The dramatically increased carrier concentration (2.85 × 1017 cm−3 vs ~1014 cm−3) and decreased resistivity (129 Ω · cm vs ~106 Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 109 cm Hz1/2/W to 3.58 × 1010 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices. PMID:26489958

  4. Heavily nickel-doped zinc oxide nanostructures prepared by hydrothermal oxidation of electro-deposited alloy films and their photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Rehman, Naeem-ur-; Mehmood, Mazhar; Ali, Farhat; Rasheed, Muhammad Asim; Younas, Muhammad; Ling, Francis C. C.; Ali, Syed Mansoor

    2014-11-01

    Wurtzite ZnO nanostructures doped with up to 17 at% Ni have been formed by hydrothermal oxidation of electrodeposited Zn-Ni alloy films. The wire diameter decreases with Ni content, up to about 20-50 nm for the Zn0.83Ni0.17O nanowires formed in NaCl solution. A strong ultra-violet emission is seen in the photoluminescence spectra obtained at 10 K and room temperature. A substantial visible emission exhibited by un-doped ZnO nanostructures formed in pure water becomes negligible by nickel doping and almost completely vanishes for the samples prepared in chloride solution, due to higher crystalline quality.

  5. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  6. Facile green synthesis of silver doped fluor-hydroxyapatite/β-cyclodextrin nanocomposite in the dual acting fluorine-containing ionic liquid medium for bone substitute applications

    NASA Astrophysics Data System (ADS)

    Jegatheeswaran, S.; Selvam, S.; Sri Ramkumar, V.; Sundrarajan, M.

    2016-05-01

    A novel green route has approached for the synthesis of silver doped fluor-hydroxyapatite/β-cyclodextrin composite by the assistance of fluorine-based ionic liquid. The selected [BMIM]BF4 ionic liquid for this work plays a dual role as fluoride source and templating agent. It helps to improve the crystalline structures and the shape of the composites. The crystallinity, surface morphology, topographical studies of the synthesized composite were validated. The XRD results of the composite show typical Ag reflection peaks at 38.1°, 44.2° and 63.4°. The ionic liquid assisted composite displayed the hexagonal shaped HA particles, which are surrounded by spherical nano-Ag particles and these particles are uniformly dispersed in the β-cyclodextrin matrix in both horizontal and cross sections from surface morphology observations. The Ionic liquid assisted silver doped fluor-hydroxyapatite/β-cyclodextrin composite exhibited very good antibacterial activities against Escherichia coli, Salmonella typhi, Klebsiella pneumonia and Serratia liquefaciens pathogens. The antibacterial proficiencies were established using Confocal Laser Scanning Microscopic developed biofilms images and bacterial growth curve analysis. The cytotoxicity results of the ionic liquid assisted composite analyzed by cell proliferation in vitro studies using human osteosarcoma cell line (MG-63) and this study has shown excellent biocompatibility.

  7. Fluorine-doped SnO2 nanoparticles anchored on reduced graphene oxide as a high-performance lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Cui, Dongming; Zheng, Zhong; Peng, Xue; Li, Teng; Sun, Tingting; Yuan, Liangjie

    2017-09-01

    The composite of fluorine-doped SnO2 anchored on reduced graphene oxide (F-SnO2/rGO) has been synthesized through a hydrothermal method. F-SnO2 particles with average size of 8 nm were uniformly anchored on the surfaces of rGO sheets and the resulting composite had a high loading of F-SnO2 (ca. 90%). Benefiting from the remarkably improved electrical conductivity and Li-ion diffusion in the electrode by F doping and rGO incorporation, the composite material exhibited high reversible capacity, excellent long-term cycling stability and superior rate capability. The electrode delivered a large reversible capacity of 1037 mAh g-1 after 150 cycles at 100 mA g-1 and high rate capacities of 860 and 770 mAh g-1 at 1 and 2 A g-1, respectively. Moreover, the electrode could maintain a high reversible capacities of 733 mAh g-1 even after 250 cycles at 500 mA g-1. The outstanding electrochemical performance of the as-synthesized composite make it a promising anode material for high-energy lithium ion batteries.

  8. Film growth of BaZrO3-doped YBa2Cu3O7-δ by using fluorine-free metal-organic deposition

    NASA Astrophysics Data System (ADS)

    Lu, F.; Kametani, F.; Hellstrom, E. E.

    2012-01-01

    In this study, BaZrO3 (BZO)-doped YBCO films were fabricated on SrTiO3(100) single-crystal substrates by a fluorine-free metal-organic deposition (MOD) process. We added extra Ba and Zr organic salts, which formed well-dispersed ˜10-25 nm sized BaZrO3 nanoparticles in the YBCO films. The in-field critical current density (Jc) and the peak pinning force (Fp) were greatly enhanced in the BZO-doped sample at 77 K relative to pure YBCO films. The optimal BZO content that gave the highest peak pinning force of ˜10 GN m-3 in a ˜180 nm thick film was found to be x = 0.10 for YBCO + xBZO films, where x is moles of BZO per 1 mol of YBCO. The angular dependence of in-field Jc measurements shows the BZO nanoparticles increased Jc over the entire angular range and also reduced the angular anisotropy measured at 4 T at 77 K.

  9. Fluorinated Polyols.

    DTIC Science & Technology

    The patent describes the formation of a fluorinated polyol from the polymerization reaction of a diglycidyl ether with a fluorinated dihydroxy...as a coating on a surface, or as an adhesive between laminates, or as a molding material within a mold. The product is useful in applications...requiring the hydrophobic properties of fluorine in combination with the adhesive and molding properties of epoxy resins.

  10. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

    NASA Astrophysics Data System (ADS)

    Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

  11. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  12. An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

    PubMed

    Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

    2017-05-05

    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

  13. An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor

    PubMed Central

    Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

    2017-01-01

    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively. PMID:28475166

  14. High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

    PubMed

    Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

    2015-08-15

    We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

  15. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    PubMed Central

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  16. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    PubMed

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  17. Growth and barium zirconium oxide doping study on superconducting M-barium copper oxide (M = yttrium, samarium) films using a fluorine-free metal organic decomposition process

    NASA Astrophysics Data System (ADS)

    Lu, Feng

    We present a fluorine-free metal organic deposition (F-free MOD) process - which is possibly a rapid and economic alternative to commercial trifluoroacetates metal organic deposition (TFA-MOD) and metal organic chemical vapor deposition (MOCVD) processes - for the fabrication of high quality epitaxial high temperature superconducting YBa2Cu3O7-x (YBCO) films on both Rolling-Assisted Biaxially Textured Substrates (RABiTS) and single crystal substrates. We first studied the growth of YBCO and SmBCO films, and their resulting microstructure and superconducting properties. We produced epitaxial c-axis YBCO films with high critical current density (Jc) in excess of 106 A/cm2 at 77K in self field at the thickness of ˜1 mum. Because industrial applications demand high quality YBCO films with very high Jc, we investigated introducing BaZrO3 (BZO) nano-pinning sites in HTS thin films by our F-free MOD technique to improve Jc and the global pinning force (Fp). BZO-doped YBCO films were fabricated by adding extra Ba and Zr in the precursor solutions, according to the molar formula 1 YBCO + x BZO. We found the BZO content affects the growth of YBCO films and determined the optimum BZO content which leads to the most effective pinning enhancement and the least YBCO degradation. We achieved the maximum pinning force of ˜ 10 GN/m3 for x = 0.10 BZO-doped, 200 nm thick YBCO film on SrTiO3 single crystal substrates by modifying the pyrolysis from a one-step to a two-plateau decomposition during the F-free MOD process. For growing optimum BZO-doped YBCO films on RABiTS substrates, the F-free MOD process was also optimized by adjusting the maximum growth temperature and growth time to achieve stronger pinning forces. Through-process quenching studies indicate that BZO form 10--25 nm nanoparticles at the early stage of the process and are stable during the following YBCO growth, demonstrating that chemically doping YBCO films with BZO using the F-free MOD process is a very effective

  18. Phosphorus and Fluorine Co-doping Induced Enhancement of Oxygen Evolution Reaction in Bimetallic Nitride Nanorods Arrays: Ionic Liquid-Driven and Mechanism Clarification.

    PubMed

    Bai, Xue; Wang, Qin; He, Feng; Wu, Zhi-Jian; Xu, Guangran; Huang, Keke; Ning, Yunkun; Zhang, Jun

    2017-09-14

    Electrocatalytic splitting of water is becoming increasingly crucial for renewable energy and device technologies. As one of the most important half-reactions for water splitting reaction, oxygen evolution reaction (OER) is a kinetically sluggish process that will greatly affect the energy conversion efficiency. Therefore, exploring a highly efficient, and durable catalyst to boost the OER is of great urgency. In this work, we develop a facile strategy for synthesis of well-defined phosphorus, fluorine co-doped Ni1.5Co1.5N hybrids nanorods (HNs) by using ionic liquids (1-butyl-3-methylimidazolium hexafluorophosphate, ILs). In comparison to the IrO2 catalyst, the as-obtained PF/Ni1.5Co1.5N HNs manifests a low overpotential of 280 mV at 10 mA cm-2, Tafel slope of 66.1 mV dec-1, and excellent durability in 1.0 M KOH solution. Furthermore, the iR-corrected electrochemical results indicate it could achieve a current density of 100 mA cm-2 at an overpotential of 350 mV. The combination of cobalt and nickel elements, 1D mesoporous nanostructure, heteroatoms incorporation, and ionic liquids assisted nitridation, which result in faster charge transfer capability and more active surface sites, can facilitate the release of oxygen bubbles from the catalyst surface. Our findings confirm that surface heteroatoms doping in bimetallic nitrides could serve as a new class of OER catalyst with excellent catalytic activity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

    SciTech Connect

    Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

    2016-03-15

    In order to improve the reliability of TFT, an Al{sub 2}O{sub 3} insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al{sub 2}O{sub 3} layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V {sub o}{sup 2+} toward the interface between the gate insulator and the semiconductor. The inserted Al{sub 2}O{sub 3} triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm{sup 2}/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

  20. High performance dye-sensitized solar cells using graphene modified fluorine-doped tin oxide glass by Langmuir–Blodgett technique

    SciTech Connect

    Roh, Ki-Min; Jo, Eun-Hee; Chang, Hankwon; Han, Tae Hee; Jang, Hee Dong

    2015-04-15

    Since the introduction of dye-sensitized solar cells (DSSCs) with low fabrication cost and high power conversion efficiency, extensive studies have been carried out to improve the charge transfer rate and performance of DSSCs. In this paper, we present DSSCs that use surface modified fluorine-doped tin oxide (FTO) substrates with reduced graphene oxide (r-GO) sheets prepared using the Langmuir–Blodgett (LB) technique to decrease the charge recombination at the TiO{sub 2}/FTO interface. R-GO sheets were excellently attached on FTO surface without physical deformations such as wrinkles; effects of the surface coverage of r-GO on the DSSC performance were also investigated. By using graphene modified FTO substrates, the resistance at the interface of TiO{sub 2}/FTO was reduced and the power conversion efficiency was increased to 8.44%. - Graphical abstract: DSSCs with graphene modified FTO glass were fabricated with the Langmuir Blodgett technique. GO sheets were transferred to FTO at various surface pressures in order to change the surface density of graphene and the highest power conversion efficiency of the DSSC was 8.44%. - Highlights: • By LB technique, r-GO sheets were coated on FTO without physical deformation. • DSSCs were fabricated with, r-GO modified FTO substrates. • With surface modification by r-GO, the interface resistance of DSSC decreased. • Maximum PCE of the DSSC was increased up to 8.44%.

  1. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO3) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO2) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)3](PF6)2, [Co(pby)3](PF6)3, LiClO4, and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO3 as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff = 56%) compared to ZnO working electrode (ff = 40%) under the same condition.

  2. Electrochemical serotonin monitoring of poly(ethylenedioxythiophene):poly(sodium 4-styrenesulfonate)-modified fluorine-doped tin oxide by predeposition of self-assembled 4-pyridylporphyrin.

    PubMed

    Song, Min-Jung; Kim, Sangsig; Ki Min, Nam; Jin, Joon-Hyung

    2014-02-15

    A 5,10,15,20-tetrakis(4-pyridyl)-21H,23H-porphyrin (TPyP)-modified self-assembled functional layer was prepared on a fluorine-doped tin oxide (FTO) substrate. We employed a bifunctional molecule, 3-iodopropionate (3IP), to covalently bind TPyP to the FTO substrate. The 3IP-monolayered FTO and the TPyP-3IP-bilayered FTO electrodes were characterized by cyclic voltammetry, electrochemical impedance spectroscopy, and Fourier transform-infrared spectroscopy. Compared to conventional electropolymerized poly(ethylenedioxythiophene):poly(sodium 4-styrenesulfonate) (PEDOT:PSS) film on bare FTO, the PEDOT:PSS film on the TPyP-3IP-bilayered FTO showed better sensitivity and selectivity in monitoring serotonin in the presence of high concentrations of interfering agents such as ascorbic acid, urea, D-(+)-glucose, epinephrine, and L-3,4-dihydroxyphenylalanine. Both PEDOT:PSS films on the bare FTO and the TPyP-3IP-bilayered FTO showed electrocatalytic effects in serotonin detection, and only the TPyP-3IP-based PEDOT:PSS film acted as a pH resistant buffer layer in the selective detection of serotonin.

  3. Reductive Electropolymerization of a Vinyl-containing Poly-pyridyl Complex on Glassy Carbon and Fluorine-doped Tin Oxide Electrodes

    PubMed Central

    Harrison, Daniel P.; Carpenter, Logan S.; Hyde, Jacob T.

    2015-01-01

    Controllable electrode surface modification is important in a number of fields, especially those with solar fuels applications. Electropolymerization is one surface modification technique that electrodeposits a polymeric film at the surface of an electrode by utilizing an applied potential to initiate the polymerization of substrates in the Helmholtz layer. This useful technique was first established by a Murray-Meyer collaboration at the University of North Carolina at Chapel Hill in the early 1980s and utilized to study numerous physical phenomena of films containing inorganic complexes as the monomeric substrate. Here, we highlight a procedure for coating electrodes with an inorganic complex by performing reductive electropolymerization of the vinyl-containing poly-pyridyl complex onto glassy carbon and fluorine doped tin oxide coated electrodes. Recommendations on electrochemical cell configurations and troubleshooting procedures are included. Although not explicitly described here, oxidative electropolymerization of pyrrole-containing compounds follows similar procedures to vinyl-based reductive electropolymerization but are far less sensitive to oxygen and water. PMID:25741745

  4. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell.

    PubMed

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO(3)) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO(2)) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)(3)](PF(6))(2), [Co(pby)(3)](PF(6))(3), LiClO(4), and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO(3) as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff=56%) compared to ZnO working electrode (ff=40%) under the same condition.

  5. Fluorine-Doped Tin Oxide Nanocrystal/Reduced Graphene Oxide Composites as Lithium Ion Battery Anode Material with High Capacity and Cycling Stability.

    PubMed

    Xu, Haiping; Shi, Liyi; Wang, Zhuyi; Liu, Jia; Zhu, Jiefang; Zhao, Yin; Zhang, Meihong; Yuan, Shuai

    2015-12-16

    Tin oxide (SnO2) is a kind of anode material with high theoretical capacity. However, the volume expansion and fast capability fading during cycling have prevented its practical application in lithium ion batteries. Herein, we report that the nanocomposite of fluorine-doped tin oxide (FTO) and reduced graphene oxide (RGO) is an ideal anode material with high capacity, high rate capability, and high stability. The FTO conductive nanocrystals were successfully anchored on RGO nanosheets from an FTO nanocrystals colloid and RGO suspension by hydrothermal treatment. As the anode material, the FTO/RGO composite showed high structural stability during the lithiation and delithiation processes. The conductive FTO nanocrystals favor the formation of stable and thin solid electrolyte interface films. Significantly, the FTO/RGO composite retains a discharge capacity as high as 1439 mAhg(-1) after 200 cycles at a current density of 100 mAg(-1). Moreover, its rate capacity displays 1148 mAhg(-1) at a current density of 1000 mAg(-1).

  6. Annealing effect of fluorine-doped SnO2/WO3 core-shell inverse opal nanoarchitecture for photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Cho, Seo Yoon; Kang, Soon Hyung; Yun, Gun; Balamurugan, Maheswari; Ahn, Kwang-Soon

    2017-01-01

    Fluorine-doped SnO2 inverse opal (FTO IO) was developed on a polystyrene bead template with a size of 350 nm (± 20 nm) by using the sol-gel-assisted spin-coating method. The resulting FTO IO film exhibited a pore diameter of 270 nm (± 5 nm), and a WO3 layer was electrodeposited with a constant charge of 400 mC/cm2, followed by a high-temperature annealing process (400, 475, and 550 °C) to increase the crystallinity of the IO films. The annealing temperature affected the morphology and the overall resistance of the thin film, thus significantly affecting the photoelectrochemical performance. In particular, the FTO/WO3 IO film annealed at 475 °C exhibited a photocurrent density of 2.9 mA/cm2 at 1.23 V versus normal hydrogen electrode, showing more than a three times higher photocurrent density in comparison with the other samples (550 °C), which is attributed to the large surface area and low resistance for the charge transport. Therefore, the annealing temperature significantly affects the morphological and the photoelectrochemical features of the FTO/WO3 IO films.

  7. Fluorinated nanocarbons using fluorinating agent: Strategies of fluorination and applications

    NASA Astrophysics Data System (ADS)

    Zhang, W.; Dubois, M.; Guérin, K.; Bonnet, P.; Kharbache, H.; Masin, F.; Thomas, P.; Mansot, J.-L.; Hamwi, A.

    2010-05-01

    The fluorination method strongly influences the physical properties of the resulting fluorinated carbon materials. Two fluorination ways, direct fluorination under pure fluorine gas and controlled fluorination by the decomposition of TbF4, have been used for the fluorination of particular nanocarbons: carbon nanofibers and a mixture of carbon nanodiscs and nanocones. Then, fluorocarbon matrix structures have been determined owing to solid state 19F NMR for MAS conditions at a spinning speed of 30 kHz. It reveals that the fluorination mechanism depends on the fluorination conditions but not on the starting nanocarbons morphology, i.e. tubular or planar. Finally, the electrochemical properties of carbon nanofibers fluorinated by the two ways are detailed. Controlled fluorination allows an increase of the power densities of fluorinated carbon nanofibers used as electrode in primary lithium batteries.

  8. Combined influence of fluorine doping and vacuum annealing on the electrical properties of ZnO:Ta films

    NASA Astrophysics Data System (ADS)

    Subha, K.; Ravichandran, K.; Sriram, S.

    2017-07-01

    In this study, our main focus is to investigate the effects of F doping and post deposition annealing (air and vacuum) on the optical and electrical characteristics of tantalum doped zinc oxide films (ZnO:Ta). A cost-effective, automated jet nebulizer spray pyrolysis technique is adopted to deposit the ZnO:Ta:F films. The doping level of Ta is kept constant (1 at.%) and that of F is varied from 5 to 20 at.% in steps of 5 at.%. The electrical resistivity of the as-deposited films decreases for 10 at.% of F concentration. The resistance increases thereafter. The same trend is also observed in annealed films. The reasons for these variations are addressed based on the effective F incorporation into the ZnO lattice and annealing atmosphere with the help of XRD, FESEM, AFM and PL studies. The incorporation of the dopants was confirmed from XPS and EDX analyses and the DFT studies show that the incorporation of the dopants does not affect the stability of the ZnO lattice. Vacuum-annealed films show better electrical properties over the as-deposited and air-annealed counterparts, though their transparency is affected marginally. A minimum resistivity of 0.81 × 10-3 Ω cm and an enhanced quality factor of 2.265 × 10-4 (Ω/sq)-1 are achieved for the vacuum-annealed films having Ta + F doping levels as 1 + 10 at.%. These results make this sample a desirable candidate for transparent electrode applications.

  9. Enhanced superconductivity of SmFeAsO co-doped by Scandium and Fluorine to increase chemical inner pressure

    NASA Astrophysics Data System (ADS)

    Chen, Haijie; Zheng, Ming; Fang, Aihua; Yang, Jianhua; Huang, Fuqiang; Xie, Xiaoming; Jiang, Mianheng

    2012-10-01

    Sm1-x/3Scx/3FeAsO1-xFx (x=0.09-0.27) were synthesized by the mechanical alloying and subsequent low temperature rapid sintering (2 h at 950 °C). The superconducting transition temperature (Tc) increased with the doping level of x. The optimal doping achieved a Tc up to 53.5 K in Sm0.93Sc0.07FeAsO0.79F0.21. The higher Tc value was attributed to the increased chemical inner pressure from local lattice distortion induced by smaller-size dopants, which was further confirmed by Sm1-xScxFeAsO0.88F0.12 (x=0.04, 0.08, 0.12). Accordingly, larger lattice distortion can enhance the superconductivity below the doping limit. Similar phenomenon was also observed in the La1-xYxFeAsO0.8F0.2 (x=0.4, 0.5, 0.6).

  10. Preparation of high-quality palladium nanocubes heavily deposited on nitrogen-doped graphene nanocomposites and their application for enhanced electrochemical sensing.

    PubMed

    Shen, Yu; Rao, Dejiang; Bai, Wushuang; Sheng, Qinglin; Zheng, Jianbin

    2017-04-01

    A nanocomposite of high-quality palladium nanocubes (PdNCs) decorated nitrogen-doped graphene (NGE/PdNC) was successfully prepared by using bromide ion as a capping agent and polyvinyl pyrrolidone as a stabilizer. The morphology and composition of NGE/PdNC nanocomposites were characterized by field emission-scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray powder diffraction (XRD) and Raman spectra. To explore the application of NGE/PdNC nanocomposites in electrochemistry, the electrocatalytic response to nitrite at a NGE/PdNC-based electrode was investigated. Thus, a highly sensitive and selective electrochemical sensor for the detection of nitrite was constructed based on a glassy carbon electrode modified with the NGE/PdNC nanocomposites. The electrochemical behavior of this nanocomposites was studied by electrochemical impedance spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical investigations proved that the NGE/PdNC nanocomposites exhibited good electrocatalytic performance for the oxidation of nitrite, including a wide linear range from 5.0×10(-7) to 1.51×10(-3)molL(-1), a high sensitivity of 342.4μAmM(-1)cm(-2) and a low detection limit of 0.11μmolL(-1) at the signal-to-noise ratio of 3 (S/N=3). This non-enzymatic sensor also showed a good reproducibility and stability. The obtained NGE/PdNC nanocomposites may be a potential composite for applying in the field of other electrochemical sensing, catalysis and optics.

  11. Fabrication and enhanced visible light photocatalytic activity of fluorine doped TiO2 by loaded with Ag.

    PubMed

    Lin, Xiaoxia; Rong, Fei; Ji, Xiang; Fu, Degang; Yuan, Chunwei

    2011-11-01

    F-doped TiO2 loaded with Ag (Ag/F-TiO2) was prepared by sol-gel process combined with photoreduction method. The physical and chemical properties of the prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM), UV-Vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). XPS analysis indicated Ag species existed as Ag0 in the structure of Ag/F-TiO2 samples. UV-Vis diffuse reflectance spectra showed that the light absorption of Ag/F-TiO2 in the visible region had a significant enhancement compared with the F-doped TiO2 (F-TiO2). PL analysis indicated that the electron-hole recombination rate had been effectively inhibited when Ag loaded on the surface of F-TiO2. The photocatalytic activities of the samples were evaluated for the degradation of X-3B (Reactive Brilliant Red dye, C.I. reactive red 2) under visible light (lambda > 420 nm) irradiation. Compared with F-TiO2, the sample of 0.50 Ag/F-TiO2 showed the highest photocatalytic activity. The interaction between F species and metallic Ag was responsible for improving the visible light photocatalytic activity.

  12. Mercury Heavily Cratered Surface

    NASA Image and Video Library

    1999-10-07

    As NASA Mariner 10 approached Mercury at nearly seven miles per second on March 29, 1974, its TV camera took this picture from an altitude of 35,000 kilometers 21,700 miles The picture shows a heavily-cratered surface with many low hills

  13. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    NASA Astrophysics Data System (ADS)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-04-01

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm-2 at 0 V vs. Ag/AgCl under 100 mW cm-2 AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light.TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent

  14. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films.

    PubMed

    Cordova, Isvar A; Peng, Qing; Ferrall, Isa L; Rieth, Adam J; Hoertz, Paul G; Glass, Jeffrey T

    2015-05-14

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm(-2) at 0 V vs. Ag/AgCl under 100 mW cm(-2) AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light.

  15. Deposition of nanostructured fluorine-doped hydroxyapatite-polycaprolactone duplex coating to enhance the mechanical properties and corrosion resistance of Mg alloy for biomedical applications.

    PubMed

    Bakhsheshi-Rad, H R; Hamzah, E; Kasiri-Asgarani, M; Jabbarzare, S; Iqbal, N; Abdul Kadir, M R

    2016-03-01

    The present study addressed the synthesis of a bi-layered nanostructured fluorine-doped hydroxyapatite (nFHA)/polycaprolactone (PCL) coating on Mg-2Zn-3Ce alloy via a combination of electrodeposition (ED) and dip-coating methods. The nFHA/PCL composite coating is composed of a thick (70-80 μm) and porous layer of PCL that uniformly covered the thin nFHA film (8-10 μm) with nanoneedle-like microstructure and crystallite size of around 70-90 nm. Electrochemical measurements showed that the nFHA/PCL composite coating presented a high corrosion resistance (R(p)=2.9×10(3) kΩ cm(2)) and provided sufficient protection for a Mg substrate against galvanic corrosion. The mechanical integrity of the nFHA/PCL composite coatings immersed in SBF for 10 days showed higher compressive strength (34% higher) compared with the uncoated samples, indicating that composite coatings can delay the loss of compressive strength of the Mg alloy. The nFHA/PCL coating indicted better bonding strength (6.9 MPa) compared to PCL coating (2.2 MPa). Immersion tests showed that nFHA/PCL composite-coated alloy experienced much milder corrosion attack and more nucleation sites for apatite compared with the PCL coated and uncoated samples. The bi-layered nFHA/PCL coating can be a good alternative method for the control of corrosion degradation of biodegradable Mg alloy for implant applications.

  16. Study on dynamic properties of the photoexcited charge carriers at anatase TiO2 nanowires/fluorine doped tin oxide interface.

    PubMed

    Qiu, Qingqing; Xu, Lingling; Wang, Dejun; Lin, Yanhong; Xie, Tengfeng

    2017-09-01

    The photoexcited electrons transfer dynamics at the TiO2 film/fluorine doped tin oxide (FTO) interface of anatase TiO2 nanowire arrays (NWAs) and QD-sensitized TiO2 NWAs films have been studied by using surface photovoltage (SPV) and transient photovoltage (TPV) techniques. Various SPV and TPV responses were obtained when the laser beam was incident from the front side illumination and back side illumination. Based on the work function values of anatase TiO2 NWAs and FTO, the results indicate that diffusion is the major way for the separation and transfer of the photoexcited charge in the both anatase TiO2 NWAs and QD-sensitized TiO2 NWAs films under front side illumination. And the photoexcited charge were separated by drift under the built-in electric field at the TiO2 film/FTO interface for anatase TiO2 NWAs and QD-sensitized TiO2 NWAs films under back side illumination. In addition, under back side illumination the built-in electric field and band structure of CdS/CdSe QDs and anatase TiO2 NWAs lead to the separation and transfer of the photoexcited charge for CdS/CdSe QDs sensitized TiO2 NWAs/FTO film. As the intensity of illumination increases, the effect of built-in electric field on the separation and transfer of the photoexcited charge in the QD-sensitized TiO2 NWAs film decreases. Copyright © 2017 Elsevier Inc. All rights reserved.

  17. Photoinactivation of Escherichia coli by sulfur-doped and nitrogen-fluorine-codoped TiO2 nanoparticles under solar simulated light and visible light irradiation.

    PubMed

    Pathakoti, Kavitha; Morrow, Shavonda; Han, Changseok; Pelaez, Miguel; He, Xiaojia; Dionysiou, Dionysios D; Hwang, Huey-Min

    2013-09-03

    Titanium dioxide (TiO2) is one of the most widely used photocatalysts for the degradation of organic contaminants in water and air. Visible light (VL) activated sulfur-doped TiO2 (S-TiO2) and nitrogen-fluorine-codoped TiO2 (N-F-TiO2) were synthesized by sol-gel methods and characterized. Their photoinactivation performance was tested against Escherichia coli under solar simulated light (SSL) and VL irradiation with comparison to commercially available TiO2. Undoped Degussa-Evonik P-25 (P-25) and Sigma-TiO2 showed the highest photocatalytic activity toward E. coli inactivation under SSL irradiation, while S-TiO2 showed a moderate toxicity. After VL irradiation, Sigma-TiO2 showed higher photoinactivation, whereas S-TiO2 and P-25 showed moderate toxicity. Oxidative stress to E. coli occurred via formation of hydroxyl radicals leading to lipid peroxidation as the primary mechanism of bacterial inactivation. Various other biological models, including human keratinocytes (HaCaT), zebrafish liver cells (ZFL), and zebrafish embryos were also used to study the toxicity of TiO2 NPs. In conclusion, N-F-TiO2 did not show any toxicity based on the assay results from all the biological models used in this study, whereas S-TiO2 was toxic to zebrafish embryos under all the test conditions. These findings also demonstrate that the tested TiO2 nanoparticles do not show any adverse effects in HaCaT and ZFL cells.

  18. Biodegradation of fluorinated alkyl substances.

    PubMed

    Frömel, Tobias; Knepper, Thomas P

    2010-01-01

    The incorporation of fluorine into organic molecules entails both positive and adverse effects. Although fluorine imparts positive and unique properties such as water-and oil-repellency and chemical stability, adverse effects often pervade members of this compound class. A striking property of long perfluoroalkyl chains is their very pronounced environmental persistence. The present review is the first one designed to summarize recent accomplishments in the field of biodegradation of fluorine-containing surfactants, their metabolites, and structural analogs. The pronounced scientific and public interest in these chemicals has given impetus to undertake numerous degradation studies to assess the sources and origins of different fluorinated analog chemical known to exist in the environment. It was shown that biodegradation plays an important role in understanding how fluorinated substances reach the environment and, once they do, what their fate is. Today, PFOS and PFOA are ubiquitously detected as environmental contaminants. Their prominence as contaminants is mainly due to their extreme persistence, which is linked to their perfluoroalkyl chain length. It appears that desulfonation of a highly fluorinated surfactants can be achieved if an α-situated H atom, in relation to the sulfonate group, is present, at least under sulfur-limiting conditions. Molecules that are less heavily fluorinated can show very complex metabolic behavior, as is the case for fluorotelomer alcohols. These compounds are degraded via different but simultaneous pathways, which produce different stable metabolites, one of which is the respective perfluoroalkanoate (8:2-FTOH is transformed to PFOA). Preliminary screening tests indicate that fluorinated functional groups, such as the trifluoromethoxy group and the p-(trifluoromethyl)phenoxy group, may be useful implementations in novel, environmentally benign fluorosurfactants. More specifically, trifluoromethoxy groups constitute a substitute

  19. Spin Transport and Relaxation up to 250 K in Heavily Doped n -Type Ge Detected Using Co2 FeAl0.5 Si0.5 Electrodes

    NASA Astrophysics Data System (ADS)

    Fujita, Y.; Yamada, M.; Tsukahara, M.; Oka, T.; Yamada, S.; Kanashima, T.; Sawano, K.; Hamaya, K.

    2017-07-01

    To achieve spin transport in heavily doped n -type Ge (n+ -type Ge) in the high-temperature range (T ≥130 K ), we examine the growth of highly spin-polarized Co2 FeAl0.5 Si0.5 (CFAS) films on Ge(111). Using lateral spin valves with the CFAS /Ge Schottky-tunnel contacts, we can observe giant enhancement in the nonlocal spin signals at low temperatures and get a spin signal of approximately 1 m Ω at room temperature. Since nonlocal Hanle-effect curves can be seen up to about 250 K, we experimentally clarify that the spin-relaxation mechanism in n+-type Ge in 8 K ≤T ≤250 K is attributed to impurity- and phonon-induced spin-flip scatterings. This study experimentally shows the availability of the CFAS spin injector and detector for getting important factors of the spin relaxation up to near room temperature, even in Ge.

  20. Fluorine Doping Strengthens the Lithium-Storage Properties of the Mn-Based Metal-Organic Framework.

    PubMed

    He, Shuhua; Zhou, Xiaozhong; Li, Zhangpeng; Wang, Jinqing; Ma, Limin; Yang, Shengrong

    2017-08-16

    The electrochemical properties of the metal-organic framework (MOF)-based composite as electrode material can be significantly improved by means of partial destruction of the full coordination of linkers to metal ions and replacing with other small ions, which make metal centers become more accostable and consequently more effective for the lithiation/delithiation process. In this paper, F(-) was chosen to replace some of the benzenedicarboxylate (BDC) linkers because of its better interaction with the Li(+) than the oxide ion. What's more, the formed M-F bond promotes the Li(+) to transfer at the active material interface and protects the surface from HF attacking. The as-synthesized F-doped Mn-MOF electrode maintains a reversible capacity of 927 mA h g(-1) with capacity retention of 78.5% after 100 cycles at 100 mA g(-1) and also exhibits a high discharge capacity of 716 mA h g(-1) at 300 mA g(-1) and 620 mA h g(-1) at 500 mA g(-1) after 500 cycles. Even at 1000 mA g(-1), the electrode still maintains a high reversible capacity of 494 mA h g(-1) after 500 cycles as well as a Coulombic efficiency of nearly 100%, which is drastically increased compared with pure Mn-MOF material as expected.

  1. Method for fluorinating coal

    DOEpatents

    Huston, John L.; Scott, Robert G.; Studier, Martin H.

    1978-01-01

    Coal is fluorinated by contact with fluorine gas at low pressure. After pial fluorination, when the reaction rate has slowed, the pressure is slowly increased until fluorination is complete, forming a solid fluorinated coal of approximate composition CF.sub.1.55 H.sub.0.15. The fluorinated coal and a solid distillate resulting from vacuum pyrolysis of the fluorinated coal are useful as an internal standard for mass spectrometric unit mass assignments from about 100 to over 1500.

  2. Quantification of low levels of fluorine content in thin films

    NASA Astrophysics Data System (ADS)

    Ferrer, F. J.; Gil-Rostra, J.; Terriza, A.; Rey, G.; Jiménez, C.; García-López, J.; Yubero, F.

    2012-03-01

    Fluorine quantification in thin film samples containing different amounts of fluorine atoms was accomplished by combining proton-Rutherford Backscattering Spectrometry (p-RBS) and proton induced gamma-ray emission (PIGE) using proton beams of 1550 and 2330 keV for p-RBS and PIGE measurements, respectively. The capabilities of the proposed quantification method are illustrated with examples of the analysis of a series of samples of fluorine-doped tin oxides, fluorinated silica, and fluorinated diamond-like carbon films. It is shown that this procedure allows the quantification of F contents as low as 1 at.% in thin films with thicknesses in the 100-400 nm range.

  3. Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates

    NASA Astrophysics Data System (ADS)

    Mori, Reona; Maida, Osamu; Ito, Toshimichi

    2015-04-01

    We have investigated properties of heavily-B-doped diamond (HBD) films homoepitaxially grown with boron-to-carbon (B/C) mole ratios ranging from 1000 to 5000 ppm in the source gas mainly by using X-Ray diffraction (XRD), cathodoluminescence (CL), and Hall effect measurements. Each HBD layer was deposited on a vicinal (001) substrate of high-pressure/high-temperature synthesized Ib-type diamond with 5° misorientation angle by means of high-power-density microwave-plasma chemical-vapor-deposition method with a source gas composed of 4% CH4 in H2 and H2-diluted B(CH3)3. XRD data indicated that the lattice constant of the B-doped layer slightly decreased for the B/C ratios≤3000 ppm while slightly increasing for that of 5000 ppm, suggesting that for the latter HBD sample a part of the incorporated B atoms behaved differently from the remaining other B atoms. By contrast the Hall data indicated that all the HBD samples had a degenerate feature only at temperatures well below room temperature (RT), above which a semiconducting feature was evident, and that the density of the degenerate holes steeply increased from 1.3×1019 to 1.2×1021 cm-3 with increases in the incorporated B density, [B], from 1.2×1020 to 5.9×1020 cm-3. This drastic change in the hole density strongly suggested the presence of a [B]-dependent impurity band. Their evident near-band-edge CL spectra taken at RT and 85 K demonstrated that radiative transition features in the HBD layers considerably varied for the B/C ratios studied. The CL peaks were consistently assigned by assuming both the presence of an impurity band and a slight bandgap shrinkage. These observed features are discussed in relation to the energy separation between the low-mobility impurity band assumed and the valence band in the high-quality HBD layer which are not merged in energy.

  4. Highly fluorinated polymers

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Work in the following areas is discussed: fluorinated poly(ether-ketone)s containing phosphorus; polyacrylates containing highly polar fluorinated pendant groups; and polyalkylene- and arylene-difluoroterephthalates.

  5. The effect of exceptionally high fluorine doping on the anisotropy of single crystalline SmFeAsO1-xFx

    NASA Astrophysics Data System (ADS)

    Fujioka, Masaya; Denholme, Saleem J.; Tanaka, Masashi; Takeya, Hiroyuki; Yamaguchi, Takahide; Takano, Yoshihiko

    2014-09-01

    We prepared single crystalline SmFeAsO1-xFx with an exceptionally high fluorine concentration by using a CsCl flux method. Comparing to conventional flux methods, this method can introduce about double the amount of fluorine into the oxygen site. The obtained single crystal shows the highest superconducting transition temperature (Tc = 57.5 K) in single crystalline iron pnictides. In addition, the residual resistivity ratio is almost three times as large as that of previously reported single crystals. This suggests that our single crystals are suitable for investigation of the intrinsic superconducting properties, since they have few defects and impurities. Using both the Werthamer-Helfand-Hohenberg model and the effective mass model, we demonstrated that a higher fluorine concentration suppresses the anisotropic superconductivity of SmFeAsO1-xFx.

  6. FLUORINATION PROCESS

    DOEpatents

    McMillan, T.S.

    1957-10-29

    A process for the fluorination of uranium metal is described. It is known that uranium will react with liquid chlorine trifluoride but the reaction proceeds at a slow rate. However, a mixture of a halogen trifluoride together with hydrogen fluoride reacts with uranium at a significantly faster rate than does a halogen trifluoride alone. Bromine trifluoride is suitable for use in the process, but chlorine trifluoride is preferred. Particularly suitable is a mixture of ClF/sub 3/ and HF having a mole ratio (moles

  7. Fluorine disposal

    NASA Technical Reports Server (NTRS)

    Rakow, A.

    1983-01-01

    A preliminary design of an F2 dispoal system for HELSTF is presented along with recommendations on operational policy and identification of potential operational problems. The analysis is based on sizing a system to handle two different modes of the HELSTF Fluorine Flow System (one operational and one catastrophic). This information should serve both as a guide to a final detailed design for HELSTF as well as a reference for subsequent monitoring and/or modification of the system which consists of a charcoal reactor followed by a dry soda lime scrubber.

  8. Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F{sub 6} and HATNA-F{sub 12} as transparent electron transport material

    SciTech Connect

    Selzer, Franz Falkenberg, Christiane Leo, Karl Riede, Moritz; Hamburger, Manuel Baumgarten, Martin Müllen, Klaus

    2014-02-07

    We study new electron transport materials (ETM) to replace the reference material C{sub 60} in p-i-n type organic solar cells. A comprehensive material characterization is performed on two fluorinated hexaazatrinaphthylene derivatives, HATNA-F{sub 6} and HATNA-F{sub 12}, to identify the most promising material for the application in devices. We find that both HATNA derivatives are equally able to substitute C{sub 60} as ETM as they exhibit large optical energy gaps, low surface roughness, and sufficiently high electron mobilities. Furthermore, large electron conductivities of 3.5×10{sup −5} S/cm and 2.0×10{sup −4} S/cm are achieved by n-doping with 4 wt. % W{sub 2}(hpp){sub 4}. HOMO levels of (7.72 ± 0.05) eV and (7.73 ± 0.05) eV are measured by ultraviolet photoelectron spectroscopy and subsequently used for estimating LUMO values of (4.2 ± 0.8) eV and (4.3 ± 0.8) eV. Both fluorinated HATNA derivatives are successfully applied in p-i-n type solar cells. Compared to identical reference devices comprising the standard material C{sub 60}, the power conversion efficiency (PCE) can be increased from 2.1 % to 2.4 % by using the new fluorinated HATNA derivatives.

  9. Doping directed at the oxygen sites in Y1Ba2Cu3O(7-delta) - The effect of sulfur, fluorine, and chlorine

    NASA Technical Reports Server (NTRS)

    Bansal, N. P.; Boyne, D.; Farrell, D. E.

    1988-01-01

    The effect of three dopants directed at the oxygen sites in Y1Ba2Cu3O(7-delta) have been investigated: sulfur, fluorine, and chlorine. Single-phase material has been obtained up to a (nominal) replacement of about 1 percent of the oxygen. Although the lattice parameters are unchanged, all dopants raise Tc (very slightly), sharpen the resistive transition, reduce the normal state resistivity, and very substantially increase the (magnetically determined) fraction of the material that is superconducting. All of these results differ qualitatively from those obtained with dopants directed at other locations in the 123 structure, and it is suggested that small additions of sulfur, fluorine, or chlorine may help to stabilize the ideal 123 stoichiometry.

  10. Doping directed at the oxygen sites in Y1Ba2Cu3O(7-delta) - The effect of sulfur, fluorine, and chlorine

    NASA Technical Reports Server (NTRS)

    Bansal, N. P.; Boyne, D.; Farrell, D. E.

    1988-01-01

    The effect of three dopants directed at the oxygen sites in Y1Ba2Cu3O(7-delta) have been investigated: sulfur, fluorine, and chlorine. Single-phase material has been obtained up to a (nominal) replacement of about 1 percent of the oxygen. Although the lattice parameters are unchanged, all dopants raise Tc (very slightly), sharpen the resistive transition, reduce the normal state resistivity, and very substantially increase the (magnetically determined) fraction of the material that is superconducting. All of these results differ qualitatively from those obtained with dopants directed at other locations in the 123 structure, and it is suggested that small additions of sulfur, fluorine, or chlorine may help to stabilize the ideal 123 stoichiometry.

  11. Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

    SciTech Connect

    Jeon, Bup Ju; Hudaya, Chairul; Lee, Joong Kee

    2016-05-15

    The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, including a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.

  12. Synergistic effect of 3D electrode architecture and fluorine doping of Li1.2Ni0.15Mn0.55Co0.1O2 for high energy density lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Krishna Kumar, S.; Ghosh, Sourav; Ghosal, Partha; Martha, Surendra K.

    2017-07-01

    Li1.2Ni0.15Mn0.55Co0.1O2 (LMR NMC) is synthesized by solution combustion method followed by LiF coating onto LMR NMC by solid state synthesis. The electrochemical performance of the pristine LMR NMC and corresponding F-doped samples as cathodes for Lithium ion Batteries (LIBs) are investigated by galvanostatic charge-discharge cycling and impedance spectroscopy. The fluorine doped cathodes deliver high capacity of ∼300 mAh g-1 at C/10 rate (10-20% greater than the pristine LMR NMC cathodes), have high discharge voltage plateau (>0.25 V) and low charge voltage plateau (0.2-0.4 V) compared to pristine LMR NMC cathodes. Beside, irreversible capacity, voltage fade, capacity loss are significantly reduced in-relation to the pristine LMR NMC electrodes. LiF coating onto LMR NMC, partially replaces Msbnd O bonds of the material by Msbnd F bonds, thus increasing the interfacial and structural stability. Besides, the manuscript describes possible replacement of aluminium current collector with 3D carbon fiber current collector which delivers high capacity of >200 mAh g-1 at 1C rate, good capacity retentions for over 200 cycles. The study opens a possibility for LMR NMC cathode material which has almost double the capacity of currently used cathodes, can be a possible substitute cathode for LIBs used in electric vehicles.

  13. Nephelometric determination of fluorine

    USGS Publications Warehouse

    Stevens, R.E.

    1936-01-01

    Fluorine in minerals may be determined with the nephelometer to about 1 per cent of the fluorine. The determination is made on an aliquot of the sodium chloride solution of the fluorine, obtained by the Berzelius method of extraction. The fluorine is precipitated as colloidal calcium fluoride in alcoholic solution, gelatin serving as a protective colloid. Arsenates, sulfates, and phosphates, which interfere with the determination, must be removed.

  14. Fluorine in medicinal chemistry.

    PubMed

    Swallow, Steven

    2015-01-01

    Since its first use in the steroid field in the late 1950s, the use of fluorine in medicinal chemistry has become commonplace, with the small electronegative fluorine atom being a key part of the medicinal chemist's repertoire of substitutions used to modulate all aspects of molecular properties including potency, physical chemistry and pharmacokinetics. This review will highlight the special nature of fluorine, drawing from a survey of marketed fluorinated pharmaceuticals and the medicinal chemistry literature, to illustrate key concepts exploited by medicinal chemists in their attempts to optimize drug molecules. Some of the potential pitfalls in the use of fluorine will also be highlighted.

  15. Lunar mining of oxygen using fluorine

    NASA Astrophysics Data System (ADS)

    Burt, Donald M.

    1992-09-01

    An important aspect of lunar mining will be the extraction of volatiles, particularly oxygen, from lunar rocks. Thermodynamic data show that oxygen could readily be recovered by fluorination of abundant lunar anorthite, CaAl2Si2O8. Fluorine is the most reactive element, and the only reagent able to extract 100 percent of the oxygen from any mineral, yet it can safely be stored or reacted in nickel or iron containers. The general fluorination reaction, mineral + 2F2 = mixed fluorides = O2, has been used for more than 30 years at a laboratory scale by stable-isotope geochemists. For anorthite, metallic Al and Si may be recovered from the mixed fluorides by Na-reduction, and CaO via exchange with Na2O; the resulting NaF may be recycled into F2 and Na by electrolysis, using lanthanide-doped CaF2 as the inert anode.

  16. Lunar mining of oxygen using fluorine

    NASA Technical Reports Server (NTRS)

    Burt, Donald M.

    1992-01-01

    An important aspect of lunar mining will be the extraction of volatiles, particularly oxygen, from lunar rocks. Thermodynamic data show that oxygen could readily be recovered by fluorination of abundant lunar anorthite, CaAl2Si2O8. Fluorine is the most reactive element, and the only reagent able to extract 100 percent of the oxygen from any mineral, yet it can safely be stored or reacted in nickel or iron containers. The general fluorination reaction, mineral + 2F2 = mixed fluorides = O2, has been used for more than 30 years at a laboratory scale by stable-isotope geochemists. For anorthite, metallic Al and Si may be recovered from the mixed fluorides by Na-reduction, and CaO via exchange with Na2O; the resulting NaF may be recycled into F2 and Na by electrolysis, using lanthanide-doped CaF2 as the inert anode.

  17. Optimization of a fluorine-free metal-organic deposition to fabricate BaZrO3-doped YBa2Cu3O7-δ film on RABiTS substrates

    NASA Astrophysics Data System (ADS)

    Lu, F.; Kametani, F.; Hellstrom, E. E.

    2013-04-01

    In this study, we used a systematic route to optimize the fluorine-free MOD process to achieve a high critical current density (Jc) in BaZrO3 (BZO)-doped YBCO films on RABiTS substrates. The BZO content is given by 1 YBCO+x BZO films, where x is moles of BZO per 1 mole of YBCO. We found x = 0.10 to be the optimal BZO content and ˜795-805 °C to be the optimal growth temperature window with 60-90 min processing time. TEM studies show the BZO nanoparticles are ˜20 nm in size and spaced ˜50-100 nm apart. The in-field Jc and the peak pinning force (Fp) of the film grown at the optimal conditions were greatly increased at 77 K relative to pure YBCO films, achieving ˜6.7 GN m-3 at 77 K, H ‖ c in a ˜800 nm thick x = 0.10 film. The angular dependence of in-field Jc measurements also shows greatly reduced angular anisotropy at 1 and 4 T at 77 K due to isotropic pinning by BZO nanoparticles.

  18. Fluorination process using catalyst

    DOEpatents

    Hochel, Robert C.; Saturday, Kathy A.

    1985-01-01

    A process for converting an actinide compound selected from the group consisting of uranium oxides, plutonium oxides, uranium tetrafluorides, plutonium tetrafluorides and mixtures of said oxides and tetrafluorides, to the corresponding volatile actinide hexafluoride by fluorination with a stoichiometric excess of fluorine gas. The improvement involves conducting the fluorination of the plutonium compounds in the presence of a fluoride catalyst selected from the group consisting of CoF.sub.3, AgF.sub.2 and NiF.sub.2, whereby the fluorination is significantly enhanced. The improvement also involves conducting the fluorination of one of the uranium compounds in the presence of a fluoride catalyst selected from the group consisting of CoF.sub.3 and AgF.sub.2, whereby the fluorination is significantly enhanced.

  19. Fluorination process using catalysts

    DOEpatents

    Hochel, R.C.; Saturday, K.A.

    1983-08-25

    A process is given for converting an actinide compound selected from the group consisting of uranium oxides, plutonium oxides, uranium tetrafluorides, plutonium tetrafluorides and mixtures of said oxides and tetrafluorides, to the corresponding volatile actinide hexafluoride by fluorination with a stoichiometric excess of fluorine gas. The improvement involves conducting the fluorination of the plutonium compounds in the presence of a fluoride catalyst selected from the group consisting of CoF/sub 3/, AgF/sub 2/ and NiF/sub 2/, whereby the fluorination is significantly enhanced. The improvement also involves conducting the fluorination of one of the uranium compounds in the presence of a fluoride catalyst selected from the group consisting of CoF/sub 3/ and AgF/sub 2/, whereby the fluorination is significantly enhanced.

  20. Fluorine separation and generation device

    SciTech Connect

    The Regents of the University of California

    2008-12-23

    A process and apparatus for the electrolytic separation of fluorine from a mixture of gases is disclosed. Also described is the process and apparatus for the generation of fluorine from fluorine/fluoride containing solids, liquids or gases.

  1. Fluorine separation and generation device

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.; Stefan, Constantin I.

    2006-08-15

    A process and apparatus for the electrolytic separation of fluorine from a mixture of gases is disclosed. Also described is the process and apparatus for the generation of fluorine from fluorine/fluoride containing solids, liquids or gases.

  2. Fluorine separation and generation device

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.; Stefan, Constantin I.

    2010-03-02

    A process and apparatus for the electrolytic separation of fluorine from a mixture of gases is disclosed. Also described is the process and apparatus for the generation of fluorine from fluorine/fluoride containing solids, liquids or gases.

  3. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction.

    PubMed

    Peera, S Gouse; Arunchander, A; Sahu, A K

    2016-08-14

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ∼110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity

  4. Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus

    SciTech Connect

    Sobolev, N. A. Emel'yanov, A. M.; Zabrodskii, V. V.; Zabrodskaya, N. V.; Sukhanov, V. L.; Shek, E. I.

    2007-05-15

    Light-emitting diodes (LEDs) have been fabricated in which optically active centers are formed by implantation of erbium ions into silicon and subsequent high-temperature annealing in an oxidizing atmosphere and the p-n junction and the ohmic contact are formed by chemical vapor deposition of polycrystalline silicon layers doped with boron and phosphorus, respectively. The luminescent properties of the LEDs have been studied. Use of polycrystalline layers makes it possible to eliminate the losses in the bulk of the light-emitting Si:Er layer. These losses are inevitable if the conventional ion implantation and diffusion methods are employed. At 80 K, the variation of electroluminescence spectra in the spectral range of the dislocation-related luminescence with the drive current is well described if the spectrum is decomposed into three Gaussian components whose peak positions and widths are current-independent and amplitudes linearly increase with the current. At 300 K, a single peak is observed in the spectral range of the dislocation-related luminescence at {approx}1.6 {mu}m.

  5. Fluorinated elastomeric materials

    DOEpatents

    Lagow, Richard J.; Dumitru, Earl T.

    1990-02-13

    This invention relates to a method of making perfluorinated elastomeric materials, and to materials made by such methods. In the full synthetic scheme, a partially fluorinated polymeric compound, with moieties to prevent crystallization, is created. It is then crosslinked to a desired degree, then perfluorinated. Various intermediate materials, such as partially fluorinated crosslinked polymers, have useful properties, and are or may become commercially available. One embodiment of this invention therefore relates to perfluorination of a selected partially fluorinated, crosslinked material, which is one step of the full synthetic scheme.

  6. Fluorinated elastomeric materials

    DOEpatents

    Lagow, Richard J.; Dumitru, Earl T.

    1986-11-04

    This invention relates to a method of making perfluorinated elastomeric materials, and to materials made by such methods. In the full synthetic scheme, a partially fluorinated polymeric compound, with moieties to prevent crystallization, is created. It is then crosslinked to a desired degree, then perfluorinated. Various intermediate materials, such as partially fluorinated crosslinked polymers, have useful properties, and are or may become commercially available. One embodiment of this invention therefore relates to perfluorination of a selected partially fluorinated, crosslinked material, which is one step of the full synthetic scheme.

  7. Structural phase stability in fluorinated calcium hydride

    NASA Astrophysics Data System (ADS)

    Varunaa, R.; Ravindran, P.

    2017-05-01

    In order to improve the hydrogen storage properties of calcium hydride (CaH2), we have tuned its thermodynamical properties through fluorination. Using ab-initio total energy calculations based on density functional theory, the structural stability, electronic structure and chemical bonding of CaH2-xFx systems are investigated. The phase transition of fluorinated systems from orthorhombic to cubic structure has been observed at 18% fluorine doped CaH2. The phase stability analysis shows that CaH2-xFx systems are highly stable and the stability is directly correlating with their ionicity. Density of states (DOS) plot reveals that CaH2-xFx systems are insulators. Partial DOS and charge density analyses conclude that these systems are governed by ionic bonding. Our results show that H closer to F can be removed more easily than that far away from F and this is due to disproportionation induced in the bonding interaction by fluorination.

  8. Tuning the morphologies of fluorine-doped tin oxides in the three-dimensional architecture of graphene for high-performance lithium-ion batteries.

    PubMed

    Phulpoto, Shahnawaz; Sun, Jinhua; Qi, Siqi; Xiao, Linhong; Yan, Shouke; Geng, Jianxin

    2017-09-27

    The morphology of electrode materials plays an important role in determining the performance of lithium-ion batteries (LIBs). However, studies on determining the most favorable morphology for high-performance LIBs have rarely been reported. In this study, a series of F-doped SnO x (F-SnO2 and F-SnO) materials with various morphologies was synthesized using ethylenediamine as a structure-directing agent in a facile hydrothermal process. During the hydrothermal process, the F-SnO x was embedded in situ into the three-dimensional (3D) architecture of reduced graphene oxide (RGO) to form F-SnO x @RGO composites. The morphologies and nanostructures of F-SnO x , i.e., F-SnO2 nanocrystals, F-SnO nanosheets, and F-SnO2 aggregated particles, were fully characterized using electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Electrochemical characterization indicated that the F-SnO2 nanocrystals uniformly distributed in the 3D RGO architecture exhibited higher specific capacity, better rate performance, and longer cycling stability than the F-SnO x with other morphologies. These excellent electrochemical performances were attributed to the uniform distribution of the F-SnO2 nanocrystals, which significantly alleviated the volume changes of the electrode material and shortened the Li ion diffusion path during lithiation/delithiation processes. The F-SnO2@RGO composite composed of uniformly distributed F-SnO2 nanocrystals also exhibited excellent rate performance, as the specific capacities were measured to be 1158 and 648 mA h g(-1) at current densities of 0.1 and 5 A g(-1), respectively.

  9. Tuning the morphologies of fluorine-doped tin oxides in the three-dimensional architecture of graphene for high-performance lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Phulpoto, Shahnawaz; Sun, Jinhua; Qi, Siqi; Xiao, Linhong; Yan, Shouke; Geng, Jianxin

    2017-09-01

    The morphology of electrode materials plays an important role in determining the performance of lithium-ion batteries (LIBs). However, studies on determining the most favorable morphology for high-performance LIBs have rarely been reported. In this study, a series of F-doped SnO x (F–SnO2 and F–SnO) materials with various morphologies was synthesized using ethylenediamine as a structure-directing agent in a facile hydrothermal process. During the hydrothermal process, the F–SnO x was embedded in situ into the three-dimensional (3D) architecture of reduced graphene oxide (RGO) to form F–SnO x @RGO composites. The morphologies and nanostructures of F–SnO x , i.e., F–SnO2 nanocrystals, F–SnO nanosheets, and F–SnO2 aggregated particles, were fully characterized using electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Electrochemical characterization indicated that the F–SnO2 nanocrystals uniformly distributed in the 3D RGO architecture exhibited higher specific capacity, better rate performance, and longer cycling stability than the F–SnO x with other morphologies. These excellent electrochemical performances were attributed to the uniform distribution of the F–SnO2 nanocrystals, which significantly alleviated the volume changes of the electrode material and shortened the Li ion diffusion path during lithiation/delithiation processes. The F–SnO2@RGO composite composed of uniformly distributed F–SnO2 nanocrystals also exhibited excellent rate performance, as the specific capacities were measured to be 1158 and 648 mA h g‑1 at current densities of 0.1 and 5 A g‑1, respectively.

  10. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Peera, S. Gouse; Arunchander, A.; Sahu, A. K.

    2016-07-01

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ~110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity and

  11. Highly fluorinated polymers

    NASA Technical Reports Server (NTRS)

    Trischler, F. D.; Hollander, J. (Inventor)

    1971-01-01

    A description is given of hydroxy containing polyethers which are prepared by the base polymerization of 2-hydro-perhaloisopropyl alcohols having the formula CF3 CH(OH)CH2X, where X is fluorine, chlorine, bromine or iodine.

  12. A flourish of fluorine

    NASA Astrophysics Data System (ADS)

    Roesky, Herbert W.

    2010-03-01

    Herbert Roesky relates how the small, highly electronegative fluorine atom unveiled the chemical reactivity of noble gases and found many practical applications. but it can also render organic compounds highly toxic or pollutants.

  13. NIGMS Fluorine Detection

    NASA Technical Reports Server (NTRS)

    Chen, Philip T.; Benna, Mehdi

    2015-01-01

    Please note that these charts were not presented at the CCMPP July 2015 Workshop; however, we would like to include these charts in the Workshop Proceedings.These charts present an overview of the NGIMS fluorine evaluation conducted for the MAVEN mission. The charts show that fluorine may be generated by the following mechanisms:-Reaction with water-Elevated temperature-Radiation, atomic oxygen, ultraviolet, spacecraft charging, and vacuum-Space environmental synergy

  14. Highly fluorinated polyurethanes

    NASA Technical Reports Server (NTRS)

    Stump, E. C., Jr.; Rochow, S. E. (Inventor)

    1972-01-01

    New polyurethanes containing a high degree of fluorine atoms are reported. The presence of the fluorine atoms in the polyurethane resins provides material having good thermal stability and chemical resistance. These polyurethanes are derived from a new hydroxy-terminated perfluoro polyether. The hydroxy terminated material is reacted with a diisocyanate to produce the polyurethanes. The polyurethanes can be used to form seals, coatings, potting material, hoses and the like.

  15. Catalysis for Fluorination and Trifluoromethylation

    PubMed Central

    Furuya, Takeru; Kamlet, Adam S.; Ritter, Tobias

    2011-01-01

    Preface Recent advances in catalysis have made the incorporation of fluorine into complex organic molecules easier than ever before, but selective, general, and practical fluorination reactions remain sought after. Fluorination of molecules often imparts desirable properties such as metabolic and thermal stability, and fluorinated molecules are therefore frequently used as pharmaceuticals or materials. Even with the latest advances in chemistry, carbon–fluorine bond formation in complex molecules is still a significant challenge. Within the last few years, new reactions to make organofluorides have emerged and exemplify how to overcome some of the intricate challenges associated with fluorination. PMID:21614074

  16. Improving Photoconductance of Fluorinated Donors with Fluorinated Acceptors

    SciTech Connect

    Garner, Logan E.; Larson, Bryon; Oosterhout, Stefan; Owczarczyk, Zbyslaw; Olson, Dana C.; Kopidakis, Nikos; Boltalina, Olga V.; Strauss, Steven H.; Braunecker, Wade A.

    2016-11-21

    This work investigates the influence of fluorination of both donor and acceptor materials on the generation of free charge carriers in small molecule donor/fullerene acceptor BHJ OPV active layers. A fluorinated and non-fluorinated small molecule analogue were synthesized and their optoelectronic properties characterized. The intrinsic photoconductance of blends of these small molecule donors was investigated using time-resolved microwave conductivity. Blends of the two donor molecules with a traditional non-fluorinated fullerene (PC70BM) as well as a fluorinated fullerene (C60(CF3)2-1) were investigated using 5% and 50% fullerene loading. We demonstrate for the first time that photoconductance in a 50:50 donor:acceptor BHJ blend using a fluorinated fullerene can actually be improved relative to a traditional non-fluorinated fullerene by fluorinating the donor molecule as well.

  17. DETERMINATION OF FLUORINE IN HIGH FLUORINE CONTENT ORGANIC MATERIALS.

    DTIC Science & Technology

    FLUORINE COMPOUNDS, *CHEMICAL ANALYSIS), ABSORPTION, OXYGEN, LANTHANUM COMPOUNDS, VOLUMETRIC ANALYSIS, ACETIC ACID , FLUORIDES, ELECTROCHEMISTRY, MAGNESIUM, ETHYLENEDINITRILO TETRAACETATES, ELECTRODES

  18. The hollow-cathode helium-fluorine laser

    NASA Technical Reports Server (NTRS)

    Crane, J. K.; Verdeyen, J. T.

    1980-01-01

    It is possible to obtain uniform stable long-pulse excitation (in excess of 100 microsec) in gas mixtures involving highly electronegative constituents (SF6, CCl4, NF3, and I2). Such a system was used to investigate the atomic fluorine laser. In the hollow cathode, lasing on fluorine transitions in the doublet system lasted for up to 80 microsec with no signs of the self-termination as reported previously in positive-column devices. The excitation process of the laser appears to depend heavily upon the fluorine donor utilized. For instance, a single-step process is involved when NF3 is used whereas a two-step process is evident for SF6. The details are discussed.

  19. Fluorine in psychedelic phenethylamines.

    PubMed

    Trachsel, Daniel

    2012-01-01

    The so-called psychedelic phenethylamines represent a class of drugs with a large range of psychoactive properties in humans, ranging from naturally occurring mescaline to amphetamine analogues and homologues. The interest in many of these compounds, occasionally referred to as designer-drugs, is widely dispersed across popular culture and political and scientific communities. In recent decades, fluorine has become a powerful and important tool in medicinal chemistry. In addition, fluorine-containing compounds and medicines can be found in numerous commercially successful pharmaceuticals that have gained a market share of some 5-15%. One might anticipate this trend to increase in the future. As far as fluorinated phenethylamines are concerned, much less is known about their chemistry and pharmacology. This paper provides an overview regarding the biological properties of over 60 fluorinated phenethylamines and discusses both historical and recent chemistry-related developments. It was shown that the introduction of fluorine into the phenethylamine nucleus can impact greatly on psychoactivity of these compounds, ranging from marked loss to enhancement and prolongation of effects. For example, in contrast to the psychoactive escaline (70), it was observed that its fluoroescaline (76) counterpart was almost devoid of psychoactive effects. Difluoroescaline (77), on the other hand, retained, and trifluoroescaline (78) showed increased human potency of escaline (70). Difluoromescaline (72) and trifluoromescaline (73) increasingly surpassed human potency and duration of mescaline (22) effects. Copyright © 2012 John Wiley & Sons, Ltd.

  20. Volcanogenic fluorine in rainwater around active degassing volcanoes: Mt. Etna and Stromboli Island, Italy.

    PubMed

    Bellomo, S; D'Alessandro, W; Longo, M

    2003-01-01

    Many studies have assessed the strong influence of volcanic activity on the surrounding environment. This is particularly true for strong gas emitters such as Mt. Etna and Stromboli volcanoes. Among volcanic gases, fluorine compounds are potentially very harmful. Fluorine cycling through rainwater in the above volcanic areas was studied analysing more than 400 monthly bulk samples. Data indicate that only approximately 1% of fluorine emission through the plume is deposited on the two volcanic areas by meteoric precipitations. Although measured bulk rainwater fluorine fluxes are comparable to and sometimes higher than in heavily polluted areas, their influence on the surrounding vegetation is limited. Only annual crops, in fact, show some damage that could be an effect of fluorine deposition, indicating that long-living endemic plant species or varieties have developed some kind of resistance. Copyright 2002 Elsevier Science B.V.

  1. DRY FLUORINE SEPARATION METHOD

    DOEpatents

    Seaborg, G.T.; Gofman, J.W.; Stoughton, R.W.

    1959-05-19

    Preparation and separation of U/sup 233/ by irradiation of ThF/sub 4/ is described. During the neutron irradiation to produce Pa/sup 233/ a fluorinating agent such as HF, F/sub 2/, or HF + F/sub 2/ is passed through the ThF/sub 4/ powder to produce PaF/sub 5/. The PaF/sub 5/, being more volatile, is removed as a gas and allowed to decay radioactively to U/sup 233/ fluoride. A batch procedure in which ThO/sub 2/ or Th metal is irradiated and fluorinated is suggested. Some Pa and U fluoride volatilizes away. Then the remainder is fluorinated with F/sub 2/ to produce very volatile UF/sub 6/ which is recovered. (T.R.H.)

  2. Fluorinated silica microchannel surfaces

    DOEpatents

    Kirby, Brian J.; Shepodd, Timothy Jon

    2005-03-15

    A method for surface modification of microchannels and capillaries. The method produces a chemically inert surface having a lowered surface free energy and improved frictional properties by attaching a fluorinated alkane group to the surface. The coating is produced by hydrolysis of a silane agent that is functionalized with either alkoxy or chloro ligands and an uncharged C.sub.3 -C.sub.10 fluorinated alkane chain. It has been found that the extent of surface coverage can be controlled by controlling the contact time from a minimum of about 2 minutes to a maximum of 120 minutes for complete surface coverage.

  3. Fluorine (soluble fluoride)

    Integrated Risk Information System (IRIS)

    Fluorine ( soluble fluoride ) ; CASRN 7782 - 41 - 4 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for No

  4. Fluorination methods in drug discovery.

    PubMed

    Yerien, Damian E; Bonesi, Sergio; Postigo, Al

    2016-09-28

    Fluorination reactions of medicinal and biologically-active compounds will be discussed. Late stage fluorination strategies of medicinal targets have recently attracted considerable attention on account of the influence that a fluorine atom can impart to targets of medicinal importance, such as modulation of lipophilicity, electronegativity, basicity and bioavailability, the latter as a consequence of membrane permeability. Therefore, the recourse to late-stage fluorine substitution on compounds with already known and relevant biological activity can provide the pharmaceutical industry with new leads with improved medicinal properties. The fluorination strategies will take into account different fluorinating reagents, either of nucleophilic or electrophilic, and of radical nature. Diverse families of organic compounds such as (hetero)aromatic rings, and aliphatic substrates (sp(3), sp(2), and sp carbon atoms) will be studied in late-stage fluorination reaction strategies.

  5. Plasma fluorination of vertically aligned carbon nanotubes: functionalization and thermal stability

    PubMed Central

    Struzzi, Claudia; Scardamaglia, Mattia; Hemberg, Axel; Petaccia, Luca; Colomer, Jean-François; Snyders, Rony

    2015-01-01

    Summary Grafting of fluorine species on carbon nanostructures has attracted interest due to the effective modification of physical and chemical properties of the starting materials. Various techniques have been employed to achieve a controlled fluorination yield; however, the effect of contaminants is rarely discussed, although they are often present. In the present work, the fluorination of vertically aligned multiwalled carbon nanotubes was performed using plasma treatment in a magnetron sputtering chamber with fluorine diluted in an argon atmosphere with an Ar/F2 ratio of 95:5. The effect of heavily diluted fluorine in the precursor gas mixture is investigated by evaluating the modifications in the nanotube structure and the electronic properties upon plasma treatment. The existence of oxygen-based grafted species is associated with background oxygen species present in the plasma chamber in addition to fluorine. The thermal stability and desorption process of the fluorine species grafted on the carbon nanotubes during the fluorine plasma treatment were evaluated by combining different spectroscopic techniques. PMID:26734518

  6. Plasma fluorination of vertically aligned carbon nanotubes: functionalization and thermal stability.

    PubMed

    Struzzi, Claudia; Scardamaglia, Mattia; Hemberg, Axel; Petaccia, Luca; Colomer, Jean-François; Snyders, Rony; Bittencourt, Carla

    2015-01-01

    Grafting of fluorine species on carbon nanostructures has attracted interest due to the effective modification of physical and chemical properties of the starting materials. Various techniques have been employed to achieve a controlled fluorination yield; however, the effect of contaminants is rarely discussed, although they are often present. In the present work, the fluorination of vertically aligned multiwalled carbon nanotubes was performed using plasma treatment in a magnetron sputtering chamber with fluorine diluted in an argon atmosphere with an Ar/F2 ratio of 95:5. The effect of heavily diluted fluorine in the precursor gas mixture is investigated by evaluating the modifications in the nanotube structure and the electronic properties upon plasma treatment. The existence of oxygen-based grafted species is associated with background oxygen species present in the plasma chamber in addition to fluorine. The thermal stability and desorption process of the fluorine species grafted on the carbon nanotubes during the fluorine plasma treatment were evaluated by combining different spectroscopic techniques.

  7. Enhanced optical limiting effect in fluorine-functionalized graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhang, Fang; Wang, Zhengping; Wang, Duanliang; Wang, Shenglai; Xu, Xinguang

    2017-09-01

    Nonlinear optical absorption of fluorine-functionalized graphene oxide (F-GO) solution was researched by the open-aperture Z-scan method using 1064 and 532 nm lasers as the excitation sources. The F-GO dispersion exhibited strong optical limiting property and the fitted results demonstrated that the optical limiting behavior was the result of a two-photon absorption process. For F-GO nanosheets, the two-photon absorption coefficients at 1064 nm excitation are 20% larger than the values at 532 nm excitation and four times larger than that of pure GO nanosheets. It indicates that the doping of fluorine can effectively improve the nonlinear optical property of GO especially in infrared waveband, and fluorine-functionalized graphene oxide is an excellent nonlinear absorption material in infrared waveband.

  8. Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, M. J.; Yuan, L.; Cheng, C. C.; Beling, C. D.; Chen, K. J.

    2009-02-01

    Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1×1015 cm-2. Implantation-induced VGa tend to aggregate and form vacancy clusters after postimplantation annealing in N2 ambient at 600 °C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN.

  9. Heavily Cratered Terrain at South Pole

    NASA Image and Video Library

    2000-08-05

    NASA Mariner 10 photo reveals a heavily cratered terrain on Mercury with a prominent scrap extending several hundred kilometers across the upper left. A crater, nested in a larger crater, is at top center.

  10. Intercrater Plains and Heavily Cratered Terrain

    NASA Image and Video Library

    2000-08-05

    This image, from NASA Mariner 10 spacecraft which launched in 1974, shows intercrater plains and heavily cratered terrain typical of much of Mercury outside the area affected by the formation of the Caloris basin.

  11. Fluorine-containing polyformals

    NASA Technical Reports Server (NTRS)

    Trischler, F. D. (Inventor)

    1968-01-01

    A fluorine-containing polymeric polyformals is described which has the repeating unit O CH2 O CH2 (CF2) sub n CH2 wherein n is an integer of from about 3 to about 6 prepared by reacting trioxane with a diol having the formula HO CH2 (CF2) sub n CH2 OH. These polymeric polyformals are useful directly for impervious coatings on metals and the like.

  12. Novel Fluorine Oxidizers

    DTIC Science & Technology

    1994-02-01

    These findings demonstrate that in agreement with our results from ab initio calculations and contrary to the VSEPR concept of repelling points on a...plane deformation force constants being much larger than the out-of-plane ones. It is shown that the VSEPR model of repelling points on a sphere cannot...fluorine bridges; (vii) that the pentagonal bipyramidal structures of these fluorides and oxofluorides cannot be explained by the VSEPR rules ot repelling

  13. The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

    NASA Technical Reports Server (NTRS)

    Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

    1991-01-01

    The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

  14. Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence

    SciTech Connect

    Vaccaro, L.; Cannas, M.; Alessi, A.; Boscaino, R.; Girard, S.; Boukenter, A.; Ouerdane, Y.; Morana, A.

    2013-05-21

    The distribution of Non-Bridging Oxygen Hole Centers (NBOHCs) in fluorine doped optical fibers was investigated by confocal microluminescence spectroscopy, monitoring their characteristic 1.9 eV luminescence band. The results show that these defects are generated by the fiber drawing and their concentration further increases after {gamma} irradiation. The NBOHC concentration profile along the fiber provides evidence for an exponential decay with the fluorine content. This finding agrees with the role of fluorine in the fiber resistance and is discussed, from the microscopic point of view, by looking at the conversion mechanisms from strained bonds acting as precursors.

  15. The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

    NASA Technical Reports Server (NTRS)

    Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

    1991-01-01

    The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

  16. Sonochemical fabrication of fluorinated mesoporous titanium dioxide microspheres

    SciTech Connect

    Yu Changlin; Yu, Jimmy C.; Chan Mui

    2009-05-15

    A sonochemical-hydrothermal method for preparing fluorinated mesoporous TiO{sub 2} microspheres was developed. Formation of mesoporous TiO{sub 2} and doping of fluorine was achieved by sonication and then hydrothermal treatment of a solution containing titanium isopropoxide, template, and sodium fluoride. The as-synthesized TiO{sub 2} microspheres were characterized by X-ray diffraction (XRD), Fourier translation infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) spectroscopy, photoluminescence spectroscopy (PL), and BET surface areas. The P123 template was removed completely during the hydrothermal and washing steps, which was different from the conventional calcination treatment. The as- synthesized TiO{sub 2} microspheres had good crystallinity and high stability. Results from the photocatalytic degradation of methylene blue (MB) showed that fluorination could remarkably improve the photocatalytic activity of titanium dioxide. - Graphical abstract: A novel method for preparing fluorinated mesoporous TiO{sub 2} microspheres was developed by a combined ultrasonic and hydrothermal treatment. The fluorinated TiO{sub 2} microspheres show high crystallinity, stability and enhanced photocatalytic activity.

  17. Incubational domain characterization in lightly doped ceria

    SciTech Connect

    Li Zhipeng; Mori, Toshiyuki; John Auchterlonie, Graeme; Zou Jin; Drennan, John

    2012-08-15

    Microstructures of both Gd- and Y-doped ceria with different doping level (i.e., 10 at% and 25 at%) have been comprehensively characterized by means of high resolution transmission electron microscopy and selected area electron diffraction. Coherent nano-sized domains can be widely observed in heavily doped ceria. Nevertheless, it was found that a large amount of dislocations actually exist in lightly doped ceria instead of heavily doped ones. Furthermore, incubational domains can be detected in lightly doped ceria, with dislocations located at the interfaces. The interactions between such linear dislocations and dopant defects have been simulated accordingly. As a consequence, the formation mechanism of incubational domains is rationalized in terms of the interaction between intrinsic dislocations of doped ceria and dopant defects. This study offers the insights into the initial state and related mechanism of the formation of nano-sized domains, which have been widely observed in heavily rare-earth-doped ceria in recent years. - Graphical abstract: Interactions between dislocations and dopants lead to incubational domain formation in lightly doped ceria. Highlights: Black-Right-Pointing-Pointer Microstructures were characterized in both heavily and light Gd-/Y-doped ceria. Black-Right-Pointing-Pointer Dislocations are existed in lightly doped ceria rather than heavily doped one. Black-Right-Pointing-Pointer Interactions between dislocations and dopant defects were simulated. Black-Right-Pointing-Pointer Formation of dislocation associated incubational domain is rationalized.

  18. Dynamic polarization of ZF in a fluorinated alcohol

    SciTech Connect

    Hill, D.; Kasprzyk, T.; Jarmer, J.J.; Penttilae, S.; Krumpolc, M.; Hoffmann, G.W.; Purcell, M.

    1988-01-01

    We have studied microwave dynamic cooling of ZF and H nuclei in mixtures of 1,1,1,3,3,3-hexafluoro-2-propanol and water, doped with Cr(V) complex. Equal spin temperatures of the two nuclei are produced, and the highest spin polarizations (/approximately/80%) are found in mixtures near the eutectic ratio. The high fluorine content and polarization make this a suitable material for polarized nuclear scattering experiments. 11 refs., 3 figs., 1 tab.

  19. Cathodic deposition of amorphous alloys of silicon, carbon, and fluorine

    SciTech Connect

    Lee, C.H.; Kroger, F.A.

    1982-05-01

    Amorphous silicon containing fluorine and carbon, pure and doped with boron or phosphorus, was deposited cathodically from solutions of K/sub 2/SiF/sub 6/ in acetone with HF. The conditions for optimum deposition were determined, and the deposits were characterized by electron microprobe x-ray emission, electrical conductivity, and infrared absorption. Doping with phosphorus causes a change from p- to n-type semiconductor behavior, with a maximum of resistivity >10/sup 13/ /OMEGA/ cm at the compensation point. 48 refs.

  20. Improved heterogeneous electron transfer kinetics of fluorinated graphene derivatives

    NASA Astrophysics Data System (ADS)

    Boopathi, Sidhureddy; Narayanan, Tharangattu N.; Senthil Kumar, Shanmugam

    2014-08-01

    Though graphitic carbons are commercially available for various electrochemical processes, their performance is limited in terms of various electrochemical activities. Recent experiments on layered carbon materials, such as graphene, demonstrated an augmented performance of these systems in all electrochemical activities due to their unique electronic properties, enhanced surface area, structure and chemical stabilities. Moreover, flexibility in controlling electronic, as well as electrochemical activities by heteroatom doping brings further leverage in their practical use. Here, we study the electron transfer kinetics of fluorinated graphene derivatives, known as fluorinated graphene oxide (FGO) and its reduced form, RFGO. Enhanced electron transfer kinetics (heterogeneous electron transfer (HET)) is observed from these fluorinated systems in comparison to their undoped systems such as graphene oxide (GO) and reduced GO. A detailed study has been conducted using standard redox probes and biomolecules revealing the enhanced electro-catalytic activities of FGO and RFGO, and electron transfer rates are simulated theoretically. This study reveals that fluorine not only induces defects in graphitic lattice leading to an enhanced HET process but also can modify the electronic structure of graphene surface.Though graphitic carbons are commercially available for various electrochemical processes, their performance is limited in terms of various electrochemical activities. Recent experiments on layered carbon materials, such as graphene, demonstrated an augmented performance of these systems in all electrochemical activities due to their unique electronic properties, enhanced surface area, structure and chemical stabilities. Moreover, flexibility in controlling electronic, as well as electrochemical activities by heteroatom doping brings further leverage in their practical use. Here, we study the electron transfer kinetics of fluorinated graphene derivatives, known as

  1. Material compatibility with gaseous fluorine

    NASA Technical Reports Server (NTRS)

    Price, Harold G , Jr; Douglass, Howard W

    1957-01-01

    Static tests on the compatibility of fluorine with non-metals at atmospheric temperature eliminated many materials from further consideration for use in fluorine systems. Several materials were found compatible at atmospheric pressures. Only Teflon and ruby (aluminum oxide) were compatible at 1500 pounds per square inch gage.

  2. Process for preparing fluorine-18

    DOEpatents

    Winchell, Harry S.; Wells, Dale K.; Lamb, James F.; Beaudry, Samuel B.

    1976-09-21

    An improved process for preparation of fluorine-18 by a neon (deuteron, alpha particle) fluorine-18 nuclear reaction in a non-reactive enclosed reaction zone wherein a ultrapure product is recovered by heating the reaction zone to a high temperature and removing the product with an inert gas.

  3. Special tool kit aids heavily garmented workers

    NASA Technical Reports Server (NTRS)

    Holmes, A. E.

    1966-01-01

    Triangular aluminum tool kit, filled with polyurethane is constructed to receive various tools and hold them in a snug but quick-release fit as an aid to heavily gloved workers. The kit is designed to allow mounting within easily accessable reach and to provide protection of the tools during storage.

  4. Fluorinated Nanocarbons Cytotoxicity.

    PubMed

    Teo, Wei Zhe; Chua, Chun Kiang; Sofer, Zdenek; Pumera, Martin

    2015-09-07

    As the research in nanotechnology progresses, there will eventually be an influx in the number of commercial products containing different types of nanomaterials. This phenomenon might damage our health and environment if the nanomaterials used are found to be toxic and they are released into the waters when the products degrade. In this study, we investigated the cytotoxicity of fluorinated nanocarbons (CXFs), a group of nanomaterials which can find applications in solid lubricants and lithium primary batteries. Our cell viability findings indicated that the toxicological effects induced by the CXF are dependent on the dose, size, shape, and fluorine content of the CXF. In addition, we verified that CXFs have insignificant interactions with the cell viability assays-methylthiazolyldiphenyl-tetrazolium bromide (MTT) and water-soluble tetrazolium salt (WST-8), thus suggesting that the cytotoxicity data obtained are unlikely to be affected by CXF-induced artifacts and the results will be reliable. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. 21 CFR 177.1615 - Polyethylene, fluorinated.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Polyethylene, fluorinated. 177.1615 Section 177... Contact Surfaces § 177.1615 Polyethylene, fluorinated. Fluorinated polyethylene, identified in paragraph... prescribed conditions: (a) Fluorinated polyethylene food-contact articles are produced by modifying...

  6. Detection of transient fluorine atoms

    NASA Astrophysics Data System (ADS)

    Loge, Gary W.; Nereson, Norris; Fry, Herbert A.

    1987-09-01

    A KrF laser with a fluence of 50 mJ/cm2 was used to photolyze either uranium hexafluoride or molecular fluorine, yielding a transient number density of fluorine atoms. The rise and decay of the atomic fluorine density was observed by transient absorption of a 25-μm Pb-salt diode laser. To prevent the diode laser wavelength from drifting out of resonance with the atomic fluorine line, part of the beam was split off and sent through a microwave discharge fluorine atom cell. This allowed a wavelength modulation-feedback technique to be used to lock the diode laser wavelength onto the atomic line. The remaining diode laser beam was made collinear with the excimer laser beam using a LiF window with a 45° angle of incidence to reflect the infrared beam while transmitting most of the uv beam. Using this setup along with a transient digitizer to average between 100 and 200 transient absorption profiles, fluorine atom number densities on the order of 1014 cm-3 in a 1.7 m pathlength were detected. The signal observed were about a factor of two less than expected from known photolysis and atomic fluorine absorption cross-sections.

  7. Reversible Changes in Resistance of Perovskite Nickelate NdNiO3 Thin Films Induced by Fluorine Substitution.

    PubMed

    Onozuka, Tomoya; Chikamatsu, Akira; Katayama, Tsukasa; Hirose, Yasushi; Harayama, Isao; Sekiba, Daiichiro; Ikenaga, Eiji; Minohara, Makoto; Kumigashira, Hiroshi; Hasegawa, Tetsuya

    2017-03-08

    Perovskite nickel oxides are of fundamental as well as technological interest because they show large resistance modulation associated with phase transition as a function of the temperature and chemical composition. Here, the effects of fluorine doping in a perovskite nickelate NdNiO3 epitaxial thin films are investigated through a low-temperature reaction with polyvinylidene fluoride as the fluorine source. The fluorine content in the fluorinated NdNiO3-xFx films is controlled with precision by varying the reaction time. The fully fluorinated film (x ≈ 1) is highly insulating and has a bandgap of 2.1 eV, in contrast to NdNiO3, which exhibits metallic transport properties. Hard X-ray photoelectron and soft X-ray absorption spectroscopies reveal the suppression of the density of states at the Fermi level as well as the reduction of nickel ions (valence state changes from 3+ to 2+) after fluorination, suggesting that the strong Coulombic repulsion in the Ni 3d orbitals associated with the fluorine substitution drives the metal-to-insulator transition. In addition, the resistivity of the fluorinated films recovers to the original value for NdNiO3 after annealing in an oxygen atmosphere. By applying the reversible fluorination process to transition-metal oxides, the search for resistance-switching materials could be accelerated.

  8. Thermal NF3 fluorination/oxidation of cobalt, yttrium, zirconium, and selected lanthanide oxides

    SciTech Connect

    Scheele, Randall D.; McNamara, Bruce K.; Casella, Andrew M.; Kozelisky, Anne E.; Neiner, Doinita

    2013-02-01

    This paper presents results of our continuing investigation on the use of nitrogen trifluoride as a fluorination or fluorination/oxidation agent for separating valuable constituents from used nuclear fuels by exploiting the different volatilities of the constituent fission product and actinide fluorides. This article focuses on fission products that do not have volatile fluorides or oxyfluorides at expected operations temperatures. Our thermodynamic calculations show that nitrogen trifluoride has the potential to completely fluorinate fission product oxides to their fluorides. Simultaneous thermogravimetric and differential thermal analyses show that the oxides of cobalt, zirconium, and the lanthanides are fluorinated but do not form volatile fluorides when treated with nitrogen trifluoride at temperatures up to 550°C. Our studies of gadolinium-doped commercial nuclear fuel indicate that nitrogen trifluoride can extract uranium from the non-volatile gadolinium.

  9. Assessment of DFT functionals with fluorine-fluorine coupling constants

    NASA Astrophysics Data System (ADS)

    García de la Vega, J. M.; San Fabián, J.

    2015-07-01

    Density functional theory (DFT) calculations of nuclear magnetic resonance (NMR) spin-spin coupling constants (SSCCs) provide an important contribution for understanding experimentally observed values. It is known that calculated SSCCs using DFT methods correlate well with those experimentally measured. Unlike most of SSCCs, in fluorine compounds, fluorine-fluorine SSCC JFF shows that the Fermi contact (FC) term is not dominant, particularly for JFF in polyfluorinated organic molecules. In order to devise a DFT approach that would correctly reproduce the variation of SSCCs within a series of fluorine compounds, we test several DFT-based approaches, using different exchange and correlation functionals. Isotropic contributions to NMR fluorine-fluorine coupling constants (FC, spin-dipolar, SD, paramagnetic spin-orbit, PSO, and diamagnetic spin-orbit, DSO) have been calculated. Results show that DFT methods give appropriate values for nJFF (n = 4 to 7), while for geminal and vicinal JFF present large deviations from experimental values. For the latter SSCCs (2JFF and 3JFF), the four contributions (FC, SD, PSO and DSO) are analysed as a function of the local and nonlocal exchange in 1,1- and 1,2-difluoroethylene. Although FC term is not dominant for these SSCCs, the variation of this contribution with exchange is remarkable. On the other hand, SD and PSO contributions can be suitably computed without and with exact exchange, respectively. This article is dedicated to the memory of Prof. N. C. Handy, whose contributions to the development of Theoretical Chemistry have been widely recognized.

  10. Compare of the electronic structures of F- and Ir-doped SmFeAsO

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Cheng, C. H.; Chen, Y. L.; Cui, Y. J.; You, W. G.; Zhang, H.; Zhao, Y.

    2010-11-01

    The electronic structures of Fe-based superconductor SmFeAsO1-xFx and SmFe1-yIryAsO are compared through X-ray photoemission spectroscopy in this study. With fluorine or iridium doping, the electronic structure and chemical environment of the SmFeAsO system were changed. The fluorine was doped at an oxygen site which introduced electrons to a reservoir Sm-O layer. The iridium was doped at an Fe site which introduced electrons to a conduction Fe-As layer directly. In a parent material SmFeAsO, the magnetic ordering corresponding to Fe3d in the low-spin state is suppressed by both fluorine and iridium doping through suppressing the magnetism of 3d itinerant electrons. Compared to fluorine doping, iridium doping affected superconductivity more significantly due to an iridium-induced disorder in FeAs layers.

  11. Modulating NHC catalysis with fluorine.

    PubMed

    Rey, Yannick P; Gilmour, Ryan

    2013-01-01

    Fluorination often confers a range of advantages in modulating the conformation and reactivity of small molecule organocatalysts. By strategically introducing fluorine substituents, as part of a β-fluoroamine motif, in a triazolium pre-catalyst, it was possible to modulate the behaviour of the corresponding N-heterocyclic carbene (NHC) with minimal steric alterations to the catalyst core. In this study, the effect of hydrogen to fluorine substitution was evaluated as part of a molecular editing study. X-ray crystallographic analyses of a number of derivatives are presented and the conformations are discussed. Upon deprotonation, the fluorinated triazolium salts generate catalytically active N-heterocyclic carbenes, which can then participate in the enantioselective Steglich rearrangement of oxazolyl carbonates to C-carboxyazlactones (e.r. up to 87.0:13.0).

  12. FLUORINATION OF OXIDIC NUCLEAR FUEL

    DOEpatents

    Mecham, W.J.; Gabor, J.D.

    1963-07-23

    A process of volatilizing fissionable material away from fission products, present together in neutron-bombarded uranium oxide, by reaction with an oxygen-fluorine mixture at 350 to 500 deg C is described. (AEC)

  13. The characterization of fluorinated graphite

    SciTech Connect

    Hagaman, E.W.; Gakh, A.A.; Annis, B.K.

    1995-12-31

    The characterization of solid fossil fuels by chemical and spectroscopic methods requires extensive modelling in less complex systems for chemical proof of principle and technique development. In previous work coal was fluorinated with dilute, elemental fluorine under conditions that were expected to lead to materials that contain only fluoromethine moieties. The solid state, cross polarization/magic angle spinning (CP/MAS) {sup 13}C NMR spectra of the fluorinated coal are complex, indicating more chemical modification than originally anticipated. Our goal in the coal derivatization was to sequentially increase the severity of the fluorination and observe by {sup 19}F and {sup 13}C NMR the type and concentration of fluorine functional groups created in the coal milieu. This requires the ability to discriminate between C, CF, CF{sub 2}, and CF, moieties in the coal matrix. The task can be accomplished by implementing the spectral editing technique of Wu and Zilm which distinguishes different kinds of carbon resonances, especially CH and CH{sub 2} resonances. These experiments utilize cross polarization (CP) and polarization inversion (PI) to effect the discrimination. Our version of this experiment is a triple resonance experiment that incorporates {sup 19}F-{sup 13}C CP, PI, and simultaneous {sup 1}H and {sup 19}F dipolar decoupling. In order to evaluate the elemental fluorine chemistry in a matrix simpler than coal, fluorinated graphite was prepared. X-ray photoelectron spectroscopy (XPS) was used to characterize the surface species, i.e., count CF, CF{sub 2} and CF{sub 3} species. These well-characterized samples are the models we will use to test the NIVIR editing experiments. The XPS and atomic force microscopy (AFM) data on the first fluorinated graphites we have prepared are reported in this paper.

  14. Chronology of heavily cratered terrains on Mercury

    NASA Astrophysics Data System (ADS)

    Marchi, S.; Chapman, C. R.

    2012-12-01

    Imaging of Mercury by Mariner 10 revealed a planet with more extensive plains units than on the Moon. Even in heavily cratered terrain, there is a lack of craters <40 km in diameter, relative to the size-frequency distribution on the Moon, a result attributed to resurfacing by the formation of widespread "intercrater plains". MESSENGER imaging has revealed that the more recent smooth plains are generally the result of widespread volcanism (rather than fluidized impact basin ejecta) and that at least localized volcanism may have persisted until comparatively recent times, despite the crustal contraction evidenced by the numerous lobate scarps. The older intercrater plains may also be volcanic. Here we address the ages of the oldest, most heavily cratered regions on Mercury that may predate most of the visible intercrater plains. We scale to Mercury the lunar crater chronology recently developed by Morbidelli et al., [1] in order to interpret new crater counts on these terrains. We find that these craters are probably not saturated but may have been in equilibrium with a rapid resurfacing process, presumably volcanism that formed the earliest recognized intercrater plains. The crater retention age for this terrain, which contains the oldest large craters on Mercury, is surprisingly young, perhaps hundreds of millions of years younger than the heavily cratered pre-Nectarian terrains on the Moon [2]. These results are important for understanding the early geological and geophysical evolution of Mercury. References: [1] Morbidelli A., Marchi S., Bottke W.F., and Kring D.A. 2012. A sawtooth timeline for the first billion years of the lunar bombardment. Earth and Planetary Science Letters, in press. [2] Marchi S., Bottke W.F., Kring D.A., and Morbidelli A. 2012. The onset of the lunar cataclysm as recorded in its ancient crater populations. Earth and Planetary Science Letters 325, 27-38.

  15. Heavy doping considerations and measurements in high-efficiency cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F.

    1985-01-01

    Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.

  16. PRODUCTION OF FLUORINE-CONTAINING HYDROCARBON

    DOEpatents

    Sarsfield, N.F.

    1949-08-01

    This patent relates to improvements in the production of fluorine- containing hydrocarbon derivatives. The process for increasing the degree of fluorination of a fluorochlorohydrocarbon comprises subjecting a highly fluorinated fluorochlorohydrocarbon to the action of a dehydrochlorinating agent, and treating the resulting unsaturated body with fluorine, cobalt trifluoride, or silver difluoride. A number of reagents are known as dehydrochlorinaling agents, including, for example, the caustic alkalies, either in an anhydrous condition or dissolved in water or a lower aliphatic alcohol.

  17. FLUORINE IN COLORADO OIL SHALE.

    USGS Publications Warehouse

    Dyni, John R.; ,

    1985-01-01

    Oil shale from the lower part of the Eocene Green River Formation in the Piceance Creek Basin, Colorado, averages 0. 13 weight percent fluorine, which is about twice that found in common shales, but is the same as the average amount found in some oil shales from other parts of the world. Some fluorine may reside in fluorapatite; however, limited data suggest that cryolite may be quantitatively more important. To gain a better understanding of the detailed distribution of fluorine in the deeper nahcolite-bearing oil shales, cores were selected for study from two exploratory holes drilled in the northern part of the Piceance Creek Basin where the oil shales reach their maximum thickness and grade.

  18. Thermal properties of fluorinated graphene

    NASA Astrophysics Data System (ADS)

    Singh, Sandeep Kumar; Srinivasan, S. Goverapet; Neek-Amal, M.; Costamagna, S.; van Duin, Adri C. T.; Peeters, F. M.

    2013-03-01

    Large-scale atomistic simulations using the reactive force field approach are implemented to investigate the thermomechanical properties of fluorinated graphene (FG). A set of parameters for the reactive force field potential optimized to reproduce key quantum mechanical properties of relevant carbon-fluorine cluster systems are presented. Molecular dynamics simulations are used to investigate the thermal rippling behavior of FG and its mechanical properties and compare them with graphene, graphane and a sheet of boron nitride. The mean square value of the height fluctuations

    and the height-height correlation function H(q) for different system sizes and temperatures show that FG is an unrippled system in contrast to the thermal rippling behavior of graphene. The effective Young's modulus of a flake of fluorinated graphene is obtained to be 273 N/m and 250 N/m for a flake of FG under uniaxial strain along armchair and zigzag directions, respectively.

  19. Method of preparing pure fluorine gas

    DOEpatents

    Asprey, Larned B.

    1976-01-01

    A simple, inexpensive system for purifying and storing pure fluorine is described. The method utilizes alkali metal-nickel fluorides to absorb tank fluorine by forming nickel complex salts and leaving the gaseous impurities which are pumped away. The complex nickel fluoride is then heated to evolve back pure gaseous fluorine.

  20. 21 CFR 177.1615 - Polyethylene, fluorinated.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Polyethylene, fluorinated. 177.1615 Section 177... Components of Single and Repeated Use Food Contact Surfaces § 177.1615 Polyethylene, fluorinated. Fluorinated polyethylene, identified in paragraph (a) of this section, may be safely used as food-contact articles...

  1. 21 CFR 177.1615 - Polyethylene, fluorinated.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Polyethylene, fluorinated. 177.1615 Section 177... Components of Single and Repeated Use Food Contact Surfaces § 177.1615 Polyethylene, fluorinated. Fluorinated polyethylene, identified in paragraph (a) of this section, may be safely used as food-contact articles...

  2. 21 CFR 177.1615 - Polyethylene, fluorinated.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Polyethylene, fluorinated. 177.1615 Section 177... Components of Single and Repeated Use Food Contact Surfaces § 177.1615 Polyethylene, fluorinated. Fluorinated polyethylene, identified in paragraph (a) of this section, may be safely used as food-contact articles...

  3. Fluorinated polyimides for optical waveguides

    SciTech Connect

    Sasaki, S.

    1996-10-01

    Polymeric optical materials are expected to be used for optical communication components, such as optical waveguides in multichip interconnections, mainly because of their good processability. However, conventional polymeric optical materials, such as poly(methyl methacrylate) and polycarbonate, have poor thermal stability, and conventional thermally stable polyimides do not have the transparency and controllable refractive indices needed in optical materials. A new optical polymer needs to be developed that has both thermal stability and good optical properties. Therefore we have been investigating fluorinated polyimides for optical communication components. This paper reports on properties of our fluorinated polyimides and fabrication of optical waveguides using these polyimides.

  4. Properties of Fluorinated Graphene Films

    DTIC Science & Technology

    2010-04-01

    Gonze, X.; Michenaud, J. P. Phys. Rev. B 1993, 47 (24), 16162. (12) Zajac, A.; Pelikán, P.; Minár, J.; Noga, J.; Straka, M.; Banacký, P.; Biskupic , S...Report (SAR) 18. NUMBER OF PAGES 5 19a. NAME OF RESPONSIBLE PERSON a. REPORT unclassified b . ABSTRACT unclassified c. THIS PAGE unclassified...FIGURE 1. Optical changes of graphene upon fluorination. Optical micrograph (A) before and ( B ) after single-side fluorination on SiO2 (SiO2 thickness

  5. C-H fluorination: U can fluorinate unactivated bonds

    NASA Astrophysics Data System (ADS)

    Neumann, Constanze N.; Ritter, Tobias

    2016-09-01

    Introducing C-F bonds into organic molecules is a challenging task, particularly through C-H activation methods. Now, a uranium-based photocatalyst turns traditional selectivity rules on their heads and fluorinates unfunctionalized alkane Csp3-H bonds, even in the presence of C-H bonds that are typically more reactive.

  6. Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

    2013-01-01

    The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

  7. Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

    PubMed

    Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

    2013-01-24

    The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

  8. Fluorine, fluorite, and fluorspar in central Colorado

    USGS Publications Warehouse

    Wallace, Alan R.

    2010-01-01

    Fluorine (F) is a widespread element that was deposited in a variety of rocks, minerals, and geologic environments in central Colorado. It occurs as a trace element, as a major component of the mineral fluorite (CaFs), and as a major economic source of fluorine in fluorspar deposits, which are massive concentrations of fluorite. This study has compiled available geochemical analyses of rocks, both unmineralized and mineralized, to determine the distribution of fluorine in specific age-lithologic categories, ranging from 1.8-giga-annum (Ga) metamorphic rocks to modern soils, throughout central Colorado. It also draws upon field studies of fluorine-rich mineral deposits, including fluorspar deposits, to decipher the nearly two-billion-year-long geologic history of fluorine in the study area, with implications for mineral-resource evaluations and exploration. The resulting compilation provides an important inventory of the naturally occurring levels and sources of fluorine that ultimately weather, erode, and become part of surface waters that are used for domestic water supplies in densely populated areas along the Colorado Front Range. Most commonly, fluorine is a trace element in virtually all rocks in the region. In the 3,798 unmineralized rocks that were analyzed for fluorine in the study area, the average fluorine content was 1,550 parts per million (ppm). The median was 640 ppm, nearly identical to the average crustal abundance of 650 ppm, and some high-fluorine rocks in the Pikes Peak area skewed the average to a value much greater than the median. Most unmineralized age-lithologic rock suites, including Proterozoic metamorphic rocks, 1.7- and 1.4-Ga granitic batholiths, Cambrian igneous rocks, Phanerozoic sedimentary rocks, and Laramide and Tertiary igneous rocks, had median fluorine values of 400 to 740 ppm fluorine. In all suites, however, a small number of analyzed samples contained more than 1 percent (10,000 ppm) fluorine. The 1.1-Ga plutonic rocks

  9. Storing Fluorine In Graphitelike Carbon Fibers

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh

    1995-01-01

    Fluorine stored in graphite or graphitelike carbon fibers for later release and/or use in chemical reactions. Storage in carbon fibers eliminates difficulty and risk of using high-pressure tanks and pipes to hold corrosive gas. Storage in carbon fibers makes fluorine more readily accessible than does storage as constituent of metal fluoride. Carbon fibers heated to release stored fluorine, which draws away to vessel where reacts with material to be fluorinated, possibly at temperature other than release temperature. Alternatively, material to be fluorinated mixed or otherwise placed in contact with fibers and entire mass heated to or beyond release temperature.

  10. Storing Fluorine In Graphitelike Carbon Fibers

    NASA Technical Reports Server (NTRS)

    Hung, Ching-Cheh

    1995-01-01

    Fluorine stored in graphite or graphitelike carbon fibers for later release and/or use in chemical reactions. Storage in carbon fibers eliminates difficulty and risk of using high-pressure tanks and pipes to hold corrosive gas. Storage in carbon fibers makes fluorine more readily accessible than does storage as constituent of metal fluoride. Carbon fibers heated to release stored fluorine, which draws away to vessel where reacts with material to be fluorinated, possibly at temperature other than release temperature. Alternatively, material to be fluorinated mixed or otherwise placed in contact with fibers and entire mass heated to or beyond release temperature.

  11. Fluorinated Polyhedral Oligosilsesquioxane Surfaces and Superhydrophobicity

    NASA Astrophysics Data System (ADS)

    Iacono, Scott T.; Peloquin, Andrew J.; Smith, Dennis W.; Mabry, Joseph M.

    Fluorinated compounds are a logical choice for hydrophobic applications owing to their generally low surface energy. Polyhedral molecules may also improve hydrophobicity by increasing material surface roughness. There have been many recent attempts to synthesize and characterize various types of fluorinated polyhedra. These reports include the fluorination or fluoroalkylation of C60 [1,2]. Unfortunately, C60F48 (fluorinated buckminsterfullerene) cannot be used as a hydrophobic material, since it is metastable and is hydrolyzed by water [3]. However, the perfluorocarborane species, perfluoro-deca-β-methyl-para-carborane, shows remarkable hydrolytic and oxidative stability [4]. Fluorinated carbon nanotubes and nanofibers have also been produced [5]. Many of these fluorinated polyhedral compounds may be useful in hydrophobic applications, but they are generally hazardous to prepare, require air and moisture sensitive manipulations, and have limited economies of scale. For these reasons, alternative fluorinated polyhedra, such as Polyhedral Oligomeric SilSesquioxanes (POS) are highly desired (Figure 6.1).

  12. The Abundance of Interstellar Fluorine

    NASA Technical Reports Server (NTRS)

    Lauroesch, James T.

    2005-01-01

    The primary objective of this program was to obtain FUSE observations of the interstellar absorption lines of F I at 951 and 954 Angstroms to derive the abundance of fluorine toward the star HD 164816. The nucleosynthetic source(s) of fluorine are still a matter of debate - the present day abundance of fluorine can potentially constrain models for pulsationally driven dredge-up in asymptotic giant branch stars. An accurate measure for the depletion behavior of fluorine will determine whether it may be detectable in QSO absorption line systems - an unambiguous detection of fluorine at suitably high redshifts would provide the best evidence to date for the neutrino process in massive stars. Furthermore, due to its extreme reactivity, measurement of the gas-phase interstellar fluorine abundance is important for models of grain chemistry. Despite the importance of measuring the interstellar fluorine abundance, at the time of our proposal only one previous detection has been made due to the low relative abundance of fluorine, the lack of lines outside the far-UV, and the blending of the available F I transitions with lines of Hz. The star HD 164816 is associated with the Lagoon nebula (M8), and at a distance of approximately 1.5 kpc probes both distant and local gas. Beginning April 8th, 2004 FUSE FP-Split observations of the star HD 164816 were obtained for this program. This data became available in the FUSE data archive May 21, 2004, and these observations were then downloaded and we began our analysis. Our analysis procedure has involved (1) fitting stellar models to the FUSE spectra, (2) using the multiple lines of Hz and N I at other wavelengths in the FUSE bandpass to derive column densities for the lines of H2 and N I which are blended with the F I features at 951 and 954 angstroms (3) the measurement of the column densities of F I and the species O I and C1 I which are important species for the dis-entangling of dust and nucleosynthetic effects. As discussed in

  13. Direct search for a ferromagnetic phase in a heavily overdoped nonsuperconducting copper oxide.

    PubMed

    Sonier, J E; Kaiser, C V; Pacradouni, V; Sabok-Sayr, S A; Cochrane, C; MacLaughlin, D E; Komiya, S; Hussey, N E

    2010-10-05

    The doping of charge carriers into the CuO(2) planes of copper oxide Mott insulators causes a gradual destruction of antiferromagnetism and the emergence of high-temperature superconductivity. Optimal superconductivity is achieved at a doping concentration p beyond which further increases in doping cause a weakening and eventual disappearance of superconductivity. A potential explanation for this demise is that ferromagnetic fluctuations compete with superconductivity in the overdoped regime. In this case, a ferromagnetic phase at very low temperatures is predicted to exist beyond the doping concentration at which superconductivity disappears. Here we report on a direct examination of this scenario in overdoped La(2-x)Sr(x)CuO(4) using the technique of muon spin relaxation. We detect the onset of static magnetic moments of electronic origin at low temperature in the heavily overdoped nonsuperconducting region. However, the magnetism does not exist in a commensurate long-range ordered state. Instead it appears as a dilute concentration of static magnetic moments. This finding places severe restrictions on the form of ferromagnetism that may exist in the overdoped regime. Although an extrinsic impurity cannot be absolutely ruled out as the source of the magnetism that does occur, the results presented here lend support to electronic band calculations that predict the occurrence of weak localized ferromagnetism at high doping.

  14. Physical Mechanism Behind Enhanced Photoelectrochemical and Photocatalytic Properties of Superhydrophilic Assemblies of 3D-TiO2 Microspheres with Arrays of Oriented, Single-Crystalline TiO2 Nanowires as Building Blocks Deposited on Fluorine-Doped Tin Oxide.

    PubMed

    Sadhu, Subha; Gupta, Preeti; Poddar, Pankaj

    2017-03-29

    In comparison to the one-dimensional (1D) semiconductor nanostructures, the hierarchical, three-dimensional (3D) microstructures, composed of the arrays of 1D nanostructures as building blocks, show quite unique physicochemical properties due to efficient photon capture and enhanced surface to volume ratio, which aid in advancing the performance of various optoelectronic devices. In this contribution, we report the fabrication of surfactant-free, radially assembled, 3D titania (rutile-phase) microsphere arrays (3D-TMSAs) composed of bundles of single-crystalline titania nanowires (NWs) directly on fluorine-doped conducting oxide (FTO) substrates with tunable architecture. The effects of growth parameters on the morphology of the 3D-TMSAs have been studied thoroughly. The 3D-TMSAs grown on the FTO-substrate showed superior photon-harvesting owing to the increase in light-scattering. The photocatalytic and photon to electron conversion efficiency of dye-sensitized solar cells (DSSC), where the optimized 3D-TMSAs were used as an anode, showed around 44% increase in the photoconversion efficiency compared to that of Degussa P-25 as a result of the synergistic effect of higher surface area and enhanced photon scattering probability. The TMSA film showed superhydrophilicity without any prior UV irradiation. In addition, the presence of bundles of almost parallel NWs led to the formation of arrays of microcapacitors, which showed stable dielectric performance. The fabrication of single-crystalline, oriented, self-assembled TMSAs with bundles of titania nanowires as their building blocks deposited on transparent conducting oxide (TCO) substrates has vast potential in the area of photoelectrochemical research.

  15. Fluorinated benzalkylsilane molecular rectifiers

    NASA Astrophysics Data System (ADS)

    Lamport, Zachary A.; Broadnax, Angela D.; Harrison, David; Barth, Katrina J.; Mendenhall, Lee; Hamilton, Clayton T.; Guthold, Martin; Thonhauser, Timo; Welker, Mark E.; Jurchescu, Oana D.

    2016-11-01

    We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF3, 3,5-CF3, 3-F-4-CF3, 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length.

  16. Fluorinated benzalkylsilane molecular rectifiers

    PubMed Central

    Lamport, Zachary A.; Broadnax, Angela D.; Harrison, David; Barth, Katrina J.; Mendenhall, Lee; Hamilton, Clayton T.; Guthold, Martin; Thonhauser, Timo; Welker, Mark E.; Jurchescu, Oana D.

    2016-01-01

    We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF3, 3,5-CF3, 3-F-4-CF3, 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length. PMID:27897250

  17. Quantum mechanical study of atomic hydrogen interaction with a fluorinated boron-substituted coronene radical.

    PubMed

    Zhang, Hong; Smith, Sean C; Nanbu, Shinkoh; Nakamura, Hiroki

    2009-04-08

    In this work we study the transmission of atomic hydrogen across a fluorinated boron-substituted coronene radical (C(19)H(12)BF(6)) as a model for partially fluorinated and boron-doped nanotubes or fullerenes. Complete active space self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) methods are employed to calculate the potential energy surfaces for both ground and excited electronic states, and one-dimensional R-matrix propagation is utilized to investigate the transmission/reflection dynamics of atomic hydrogen, through the central six-member ring of the fluorinated boron-substituted coronene radical. The quantum scattering includes resonance effects as well as non-adiabatic transitions between the ground and excited electronic states. Within the sudden approximation, both centre and off-centre approach trajectories have been investigated. Implications for atomic hydrogen encapsulation by carbon nanotube and fullerene are discussed.

  18. Vicinal fluorine-fluorine coupling constants: Fourier analysis

    NASA Astrophysics Data System (ADS)

    San Fabián, J.; Westra Hoekzema, A. J. A.

    2004-10-01

    Stereochemical dependences of vicinal fluorine-fluorine nuclear magnetic resonance coupling constants (3JFF) have been studied with the multiconfigurational self-consistent field in the restricted active space approach, with the second-order polarization propagator approximation (SOPPA), and with density functional theory. The SOPPA results show the best overall agreement with experimental couplings. The relationship with the dihedral angle between the coupled fluorines has been studied by Fourier analysis, the result is very different from that of proton-proton couplings. The Fourier coefficients do not resemble those of a typical Karplus equation. The four nonrelativistic contributions to the coupling constants of 1,2-difluoroethane configurations have been studied separately showing that up to six Fourier coefficients are required to reproduce the calculated values satisfactorily. Comparison with Fourier coefficients for matching hydrogen fluoride dimer configurations suggests that the higher order Fourier coefficients (Cn⩾3) originate mainly from through-space Fermi contact interaction. The through-space interaction is the main reason 3JFF do not follow the Karplus equation.

  19. The standardisation of fluorine-18.

    PubMed

    van der Gaast, H A

    1995-12-01

    The Australian Nuclear Science and Technology Organisation (ANSTO) maintains and disseminates the Australian standards of activity measurement. The standards include all nuclear medicine gamma-emitters and pure positron emitters. Calibration factors for the ANSTO 4 pi ionisation chamber for pure positron emitters have been traditionally determined from primary standardisations of cobalt-60 and sodium-22. Activity estimates of pure beta emitters have been previously determined by using 4 pi beta-gamma coincidence (efficiency tracer) counting. This method was adapted to test activity estimates of short-lived pure positron emitters made using the 4 pi ionisation chamber. Detailed are methods whereby the activity of fluorine-18 can be measured. The first method is an efficiency tracing method developed in this work. The method directly tests 4 pi ionisation chamber fluorine-18 activity estimates. The gamma-gamma method was carried out to confirm this.

  20. Metalloid Aluminum Clusters with Fluorine

    DTIC Science & Technology

    2016-12-01

    high energy density compared to explosives, but typically release this energy slowly via diffusion-limited combustion. There is recent interest in using...examine the cluster binding energy and electronic structure. Partial fluorine substitution in a prototypical aluminum-cyclopentadienyl cluster results...molecular dynamics, binding energy , siesta code, density of states, projected density of states 15. NUMBER OF PAGES 69 16. PRICE CODE 17. SECURITY

  1. Low Temperature Fluorination of Aerosol Suspensions of Hydrocarbons Utilizing Elemental Fluorine.

    DTIC Science & Technology

    1982-09-01

    photochemical finishing to yield product consisting of 40% F-isopentane, 15% each F- isobutane and 2-methyl-3,3-difluorobutane, 8% 2-fluoro-2-methyl-3,3...excellent yields of F- isobutane . If the fluorine concentration is reduced or the photochemical stage not activated the result is less fluorinated... isobutanes . Apparently one of the first reactions to occur is the fluorination of the amine grouping and its loss as NF2 /NF3. Aerosol fluorination of

  2. Extreme Modulation Properties of Aromatic Fluorine

    SciTech Connect

    Burnett, Michael N; Gakh, Andrei A

    2011-01-01

    Thorough examination of the current literature as well as publicly available databases allowed us to qualify aromatic fluorine as a unique modulator of biological properties of organic compounds. In some rare cases, introduction of fluorine increased biological activity 100,000 times and even higher. We have also identified several examples where aromatic fluorine substantially reduced biological activity. Selected individual cases of extreme modulation are presented and discussed in the paper.

  3. Copolymers of fluorinated polydienes and sulfonated polystyrene

    DOEpatents

    Mays, Jimmy W.; Gido, Samuel P.; Huang, Tianzi; Hong, Kunlun

    2009-11-17

    Copolymers of fluorinated polydienes and sulfonated polystyrene and their use in fuel cell membranes, batteries, breathable chemical-biological protective materials, and templates for sol-gel polymerization.

  4. Silver-catalyzed late-stage fluorination.

    PubMed

    Tang, Pingping; Furuya, Takeru; Ritter, Tobias

    2010-09-01

    Carbon-fluorine bond formation by transition metal catalysis is difficult, and only a few methods for the synthesis of aryl fluorides have been developed. All reported transition-metal-catalyzed fluorination reactions for the synthesis of functionalized arenes are based on palladium. Here we present silver catalysis for carbon-fluorine bond formation. Our report is the first example of the use of the transition metal silver to form carbon-heteroatom bonds by cross-coupling catalysis. The functional group tolerance and substrate scope presented here have not been demonstrated for any other fluorination reaction to date.

  5. ChemCam observations of Fluorine in Murray and Stimson units, Gale crater, Mars

    NASA Astrophysics Data System (ADS)

    Dehouck, E.; Forni, O.; Meslin, P. Y.; Mangold, N.; l'Haridon, J.; Nachon, M.; Cousin, A.; Newsom, H. E.; Clegg, S. M.; Gasnault, O.; Maurice, S.; Wiens, R. C.; Sautter, V.; Lasue, J.

    2016-12-01

    More than 250 fluorine detections have been identified in the Murray and Stimson units (Starting at Sol 760). Up to the Garden City outcrop which is heavily cross-cut by diagenetic veins (Sol 940), fluorine was very frequent. At Garden City, fluorine contents are very high (up to 12 wt.% for the highest point on the Alvord Mountain target). After Garden City and up to the departure from Marias Pass there are very few detections. The rate of detection notably increases after Marias Pass. Different geological environments show F-bearing mineralogy. Before Garden City, F-bearing silicates (phyllosilicates, micas) were found in the lower Pahrump section (e.g., sol 760). Apatites were found in the upper Pahrump sandstones but in close relationship with calcium sulfates and are probably formed in a later stage. Apatites were also found at the contact between the Murray (lacustrine) and Stimson (overlying eolian) formations and they are mostly located in the thin layer above the contact at Marias Pass in the lower-most Stimson. These observations suggest some kind of hydrothermal fluid circulation. Fluorite is mainly found at the Garden City vein complex in dark-tone veins. The presence of this large amount of fluorite suggests acidic leaching or fluid circulation could have leached phosphates, minerals that are easily dissolved by acidic alteration. Mobility of fluorine in fluids due to dissolution of phosphates at low temperature may explain the observed veins, but it does not explain the unique observation of these fluorite veins at Garden City and not in the Pahrump Hills section below. The formations of these dark-toned veins seem to precede the formation of the Ca-sulfate veins. Finally, fluorine and Ca-bearing phases were observed together mainly after Marias Pass (sol >1000) in association with veins that also contain halite. This ubiquitous presence of fluorine bearing fluids may have a profound influence on the preservation of eventual pre-existing form of life.

  6. Xenon fluoride solutions effective as fluorinating agents

    NASA Technical Reports Server (NTRS)

    Hyman, H. H.; Quarterman, L. A.; Sheft, I.

    1967-01-01

    Solutions of xenon fluorides in anhydrous hydrogen fluoride have few disruptive effects and leave a residue consisting of gaseous xenon, which can be recovered and refluorinated. This mild agent can be used with materials which normally must be fluorinated with fluorine alone at high temperatures.

  7. Fluorine-Hydrazine Propulsion Technology update

    NASA Technical Reports Server (NTRS)

    Bond, D. L.; Appel, M. A.; Kruger, G. W.

    1980-01-01

    The current status of the fluorine hydrazine propulsion system development is discussed. Progress on the components, rocket engine, and system design is presented. A detailed look at a fluorine hydrazine system as a potential propulsion option for the Galileo Project (Jupiter orbiter) is delineated and the results of safety and technical reviews which were accomplished to verify the feasibility of this option are summarized.

  8. The role of fluorine in medicinal chemistry.

    PubMed

    Shah, Poonam; Westwell, Andrew D

    2007-10-01

    The small and highly electronegative fluorine atom can play a remarkable role in medicinal chemistry. Selective installation of fluorine into a therapeutic or diagnostic small molecule candidate can enhance a number of pharmacokinetic and physicochemical properties such as improved metabolic stability and enhanced membrane permeation. Increased binding affinity of fluorinated drug candidates to target protein has also been documented in a number of cases. A further emerging application of the fluorine atom is the use of 18F as a radiolabel tracer atom in the exquisitely sensitive technique of Positron Emission Tomography (PET) imaging. This short review aims to bring together these various aspects of the use of fluorine in medicinal chemistry applications, citing selected examples from across a variety of therapeutic and diagnostic settings. The increasingly routine incorporation of fluorine atom(s) into drug candidates suggests a bright future for fluorine in drug discovery and development. A major challenge moving forward will be how and where to install fluorine in a rational sense to best optimise molecular properties.

  9. Energetics of Defects on Graphene through Fluorination

    SciTech Connect

    Xiao, Jie; Meduri, Praveen; Chen, Honghao; Wang, Zhiguo; Gao, Fei; Hu, Jian Z.; Feng, Ju; Hu, Mary Y.; Dai, Sheng; Brown, Suree; Adcock, Jamie L.; Deng, Zhiqun; Liu, Jun; Graff, Gordon L.; Aksay, Ilhan A.; Zhang, Jiguang

    2014-04-01

    In the present study, we used FGS[5] as the substrate and implemented low temperature (<=150 oC) direct fluorination on graphene sheets. The fluorine content has been modulated to investigate the formation mechanism of different functional groups such as C-F, CF2, O-CF2 and (C=O)F during the fluorination process. The detailed structure and chemical bonds were simulated theoretically and quantified experimentally by using density function theory (DFT) calculations and NMR techniques, respectively. The adjustable power/energy ratio from fluorinated graphene as cathode for primary lithium batteries is also discussed. From a combination of NMR spectroscopy and theoretical calculation, we conclude that the topological defects without oxygen containing groups provide most of the reactive sites to react with F. FGS also contain a small number of COOH groups which contribute for the fluorination reaction. Hydroxyl or epoxy groups contribute to another fraction of the reaction products.

  10. Structure-property relationships in fluorinated polyimides

    SciTech Connect

    Auman, B.C.

    1995-12-01

    Over the past several years we have been exploring new fluorinated polyimides for electronics applications. In this paper we explore the effects of fluorine incorporation into polyimides by various methods. These include backbone modification via fluorinated linking groups and/or aromatic ring substitution, and incorporation of pendant fluoroalkyl side chains. Factors such as structural and positional isomerism of certain fluorinated groups on the properties of polyimide films are also considered. The properties investigated include dielectric constant, moisture absorption, thermal expansion coefficient, thermal stability, glass transition temperature, mechanical properties and solubility. The goal of this work has been to define the most fortuitous method of fluorine incorporation that will allow the optimum combination of properties for electronics.

  11. Energetics of defects on graphene through fluorination.

    PubMed

    Xiao, Jie; Meduri, Praveen; Chen, Honghao; Wang, Zhiguo; Gao, Fei; Hu, Jianzhi; Feng, Ju; Hu, Mary; Dai, Sheng; Brown, Suree; Adcock, Jamie L; Deng, Zhiqun; Liu, Jun; Graff, Gordon L; Aksay, Ilhan A; Zhang, Ji-Guang

    2014-05-01

    Functionalized graphene sheets (FGSs) comprise a unique member of the carbon family, demonstrating excellent electrical conductivity and mechanical strength. However, the detailed chemical composition of this material is still unclear. Herein, we take advantage of the fluorination process to semiquantitatively probe the defects and functional groups on graphene surface. Functionalized graphene sheets are used as substrate for low-temperature (<150 °C) direct fluorination. The fluorine content has been modified to investigate the formation mechanism of different functional groups such as C-F, CF2, O-CF2 and (C=O)F during fluorination. The detailed structure and chemical bonds are simulated by density functional theory (DFT) and quantified experimentally by nuclear magnetic resonance (NMR). The electrochemical properties of fluorinated graphene are also discussed extending the use of graphene from fundamental research to practical applications.

  12. Applications of Fluorine in Medicinal Chemistry.

    PubMed

    Gillis, Eric P; Eastman, Kyle J; Hill, Matthew D; Donnelly, David J; Meanwell, Nicholas A

    2015-11-12

    The role of fluorine in drug design and development is expanding rapidly as we learn more about the unique properties associated with this unusual element and how to deploy it with greater sophistication. The judicious introduction of fluorine into a molecule can productively influence conformation, pKa, intrinsic potency, membrane permeability, metabolic pathways, and pharmacokinetic properties. In addition, (18)F has been established as a useful positron emitting isotope for use with in vivo imaging technology that potentially has extensive application in drug discovery and development, often limited only by convenient synthetic accessibility to labeled compounds. The wide ranging applications of fluorine in drug design are providing a strong stimulus for the development of new synthetic methodologies that allow more facile access to a wide range of fluorinated compounds. In this review, we provide an update on the effects of the strategic incorporation of fluorine in drug molecules and applications in positron emission tomography.

  13. Experimental study of electrochemical fluorination of trichloroethylene

    NASA Technical Reports Server (NTRS)

    Polisena, C.; Liu, C. C.; Savinell, R. F.

    1982-01-01

    The electrochemical fluorination of trichloroethylene in anhydrous hydrogen fluoride at 0 C and at constant cell potential was investigated. A microprocessor-aided electrochemical fluorination reactor system that yields highly reproducible results was utilized. The following major two-carbon-chain products were observed: CHCl2-CCl2F, CHCl2-CClF2, CHClF-CCl2F, and CCl2F-CClF2. The first step in the reaction sequence was determined to be fluorine addition to the double bond, followed by replacement of first hydrogen and then chlorine by fluorine. Polymerization reactions yielded higher molecular weight or possible ring-type chlorofluorohydrocarbons. A comparison of the reaction products of electrochemical and chemical fluorinations of trichloroethylene is also discussed.

  14. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

  15. Oxygen sensitivity of photoluminescence intensity of Pt complex dispersed in fluorinated acrylate for pressure sensitive paint applications

    NASA Astrophysics Data System (ADS)

    Kwak, Jae Su; Choi, Yong Gyu

    2014-09-01

    Oxygen-sensitive photoluminescence intensity of a new combination of luminophore and matrix has been investigated for use in pressure sensitive paint applications. In consideration of oxygen permeability as well as optical transparency and structural stability, a fluorinated acrylate polymer is chosen as matrix in this study, where PtTFPP complex is dispersed and acts as luminophore responsible for the oxygen quenching. Processing conditions as to spin-coat films of the fluorinated acrylate doped with the PtTFPP are described. Pressure dependence of the photoluminescence emission of such spin-coat films is explained in connection with luminophore concentration, film thickness and types of substrate.

  16. Intercrater Plains and Heavily Cratered Terrain - First Encounter

    NASA Image and Video Library

    2000-01-18

    Intercrater plains and heavily cratered terrain typical of much of Mercury outside the area affected by the formation of the Caloris basin are shown in this image taken during the NASA Mariner 10 first encounter with Mercury in 1974.

  17. 4. EAST VIEW OF HEAVILY DETERIORATED SECTION OF SEA WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. EAST VIEW OF HEAVILY DETERIORATED SECTION OF SEA WALL LOOKING ACROSS ERODED EASTERN CORNER OF PEA PATCH ISLAND. BUILDING FOUNDATION REMAINS IN FOREGROUND. - Fort Delaware, Sea Wall, Pea Patch Island, Delaware City, New Castle County, DE

  18. Oxygen vacancies versus fluorine at CeO2(111): a case of mistaken identity?

    PubMed

    Kullgren, J; Wolf, M J; Castleton, C W M; Mitev, P; Briels, W J; Hermansson, K

    2014-04-18

    We propose a resolution to the puzzle presented by the surface defects observed with STM at the (111) surface facet of CeO 2 single crystals. In the seminal paper of Esch et al. [Science 309, 752 (2005)] they were identified with oxygen vacancies, but the observed behavior of these defects is inconsistent with the results of density functional theory (DFT) studies of oxygen vacancies in the literature. We resolve these inconsistencies via DFT calculations of the properties of both oxygen vacancies and fluorine impurities at CeO2(111), the latter having recently been shown to exist in high concentrations in single crystals from a widely used commercial source of such samples. We find that the simulated filled-state STM images of surface-layer oxygen vacancies and fluorine impurities are essentially identical, which would render problematic their experimental distinction by such images alone. However, we find that our theoretical results for the most stable location, mobility, and tendency to cluster, of fluorine impurities are consistent with experimental observations, in contrast to those for oxygen vacancies. Based on these results, we propose that the surface defects observed in STM experiments on CeO2 single crystals reported heretofore were not oxygen vacancies, but fluorine impurities. Since the similarity of the simulated STM images of the two defects is due primarily to the relative energies of the 2p states of oxygen and fluorine ions, this confusion might also occur for other oxides which have been either doped or contaminated with fluorine.

  19. Fluorinated Azobenzenes for Shape-Persistent Liquid Crystal Polymer Networks.

    PubMed

    Iamsaard, Supitchaya; Anger, Emmanuel; Aßhoff, Sarah Jane; Depauw, Alexis; Fletcher, Stephen P; Katsonis, Nathalie

    2016-08-16

    Liquid crystal polymer networks respond with an anisotropic deformation to a range of external stimuli. When doped with molecular photoswitches, these materials undergo complex shape modifications under illumination. As the deformations are reversed when irradiation stops, applications where the activated shape is required to have thermal stability have been precluded. Previous attempts to incorporate molecular switches into thermally stable photoisomers were unsuccessful at photogenerating macroscopic shapes that are retained over time. Herein, we show that to preserve photoactivated molecular deformation on the macroscopic scale, it is important not only to engineer the thermal stability of the photoswitch but also to adjust the cross-linking density in the polymer network and to optimize the molecular orientations in the material. Our strategy resulted in materials containing fluorinated azobenzenes that retain their photochemical shape for more than eight days, which constitutes the first demonstration of long-lived photomechanical deformation in liquid-crystal polymer networks.

  20. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    NASA Astrophysics Data System (ADS)

    Li, Fan; Sharma, Yogesh; Shah, Vishal; Jennings, Mike; Pérez-Tomás, Amador; Myronov, Maksym; Fisher, Craig; Leadley, David; Mawby, Phil

    2015-10-01

    A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 1020 cm-3 at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 1019 cm-3, donor level 15 meV) to ∼12% for 6 × 1020 cm-3. Free donors are found to saturate in 3C-SiC at ∼7 × 1019 cm-3. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO2 layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 1019 cm-3) sample with PIA 1375 °C 2 h without a SiO2 cap.

  1. Ohmic Contact Formation for N-Type Diamond by Selective Doping

    NASA Astrophysics Data System (ADS)

    Teraji, Tokuyuki; Katagiri, Masayuki; Koizumi, Satoshi; Ito, Toshimichi; Kanda, Hisao

    2003-08-01

    Ohmic contacts with low contact resistivity were formed on phosphorus-doped n-type {111} diamond thin films grown by microwave-plasma chemical-vapor deposition. Heavily-doped diamond layers were selectively grown on a diamond substrate by covering a part of substrate surface with a titanium/gold layer. Gold contacts deposited directory on a lightly phosphorus-doped diamond showed a rectification characteristic, while those formed on the selectively grown, heavily doped diamond layers showed an Ohmic characteristic. The Ohmic property of contacts formed with the heavily doped layers was found to be independent of the metals. It is therefore concluded that the tunneling current dominates carrier transport at the interface between the metal and the heavily doped n-type diamond.

  2. Synthetic biology approaches to fluorinated polyketides

    PubMed Central

    Thuronyi, Benjamin W.; Chang, Michelle C. Y.

    2016-01-01

    Conspectus The catalytic diversity of living systems offers a broad range of opportunities for developing new methods to produce small molecule targets such as fuels, materials, and pharmaceuticals. In addition to providing cost-effective and renewable methods for large-scale commercial processes, the exploration of the unusual chemical phenotypes found in living organisms can also enable the expansion of chemical space for discovery of novel function by combining orthogonal attributes from both synthetic and biological chemistry. In this context, we have focused on the development of new fluorine chemistry using synthetic biology approaches. While fluorine has become an important feature in compounds of synthetic origin, the scope of biological fluorine chemistry in living systems is limited, with fewer than 20 organofluorine natural products identified to date. In order to expand the diversity of biosynthetically accessible organofluorines, we have begun to develop methods for the site-selective introduction of fluorine into complex natural products by engineering biosynthetic machinery to incorporate fluorinated building blocks. To gain insight into how both enzyme active sites and metabolic pathways can be evolved to manage and select for fluorinated compounds, we have studied one of the only characterized natural hosts for organofluorine biosynthesis, the soil microbe Streptomyces cattleya. This information provides a template for designing engineered organofluorine enzymes, pathways, and hosts and has allowed us to initiate construction of enzymatic and cellular pathways for the production of fluorinated polyketides. PMID:25719427

  3. Synthetic biology approaches to fluorinated polyketides.

    PubMed

    Thuronyi, Benjamin W; Chang, Michelle C Y

    2015-03-17

    The catalytic diversity of living systems offers a broad range of opportunities for developing new methods to produce small molecule targets such as fuels, materials, and pharmaceuticals. In addition to providing cost-effective and renewable methods for large-scale commercial processes, the exploration of the unusual chemical phenotypes found in living organisms can also enable the expansion of chemical space for discovery of novel function by combining orthogonal attributes from both synthetic and biological chemistry. In this context, we have focused on the development of new fluorine chemistry using synthetic biology approaches. While fluorine has become an important feature in compounds of synthetic origin, the scope of biological fluorine chemistry in living systems is limited, with fewer than 20 organofluorine natural products identified to date. In order to expand the diversity of biosynthetically accessible organofluorines, we have begun to develop methods for the site-selective introduction of fluorine into complex natural products by engineering biosynthetic machinery to incorporate fluorinated building blocks. To gain insight into how both enzyme active sites and metabolic pathways can be evolved to manage and select for fluorinated compounds, we have studied one of the only characterized natural hosts for organofluorine biosynthesis, the soil microbe Streptomyces cattleya. This information provides a template for designing engineered organofluorine enzymes, pathways, and hosts and has allowed us to initiate construction of enzymatic and cellular pathways for the production of fluorinated polyketides.

  4. Passivation of fluorinated activated charcoal

    SciTech Connect

    Del Cul, G.D.; Trowbridge, L.D.; Simmons, D.W.; Williams, D.F.; Toth, L.M.

    1997-10-01

    The Molten Salt Reactor Experiment (MSRE), at the Oak Ridge National Laboratory has been shut down since 1969 when the fuel salt was drained from the core into two Hastelloy N tanks at the reactor site. In 1995, a multiyear project was launched to remediate the potentially hazardous conditions generated by the movement of fissile material and reactive gases from the storage tanks into the piping system and an auxiliary charcoal bed (ACB). The top 12 in. of the ACB is known by gamma scan and thermal analysis to contain about 2.6 kg U-233. According to the laboratory tests, a few feet of fluorinated charcoal are believed to extend beyond the uranium front. The remainder of the ACB should consist of unreacted charcoal. Fluorinated charcoal, when subjected to rapid heating, can decompose generating gaseous products. Under confined conditions, the sudden exothermic decomposition can produce high temperatures and pressures of near-explosive characteristics. Since it will be necessary to drill and tap the ACB to allow installation of piping and instrumentation for remediation and recovery activities, it is necessary to chemically convert the reactive fluorinated charcoal into a more stable material. Ammonia can be administered to the ACB as a volatile denaturing agent that results in the conversion of the C{sub x}F to carbon and ammonium fluoride, NH{sub 4}F. The charcoal laden with NH{sub 4}F can then be heated without risking any sudden decomposition. The only consequence of heating the treated material will be the volatilization of NH{sub 4}F as a mixture of NH{sub 3} and HF, which would primarily recombine as NH{sub 4}F on surfaces below 200 C. The planned scheme for the ACB denaturing is to flow diluted ammonia gas in steps of increasing NH{sub 3} concentration, 2% to 50%, followed by the injection of pure ammonia. This report summarizes the planned passivation treatment scheme to stabilize the ACB and remove the potential hazards. It also includes basic information

  5. Hydration dynamics at fluorinated protein surfaces.

    PubMed

    Kwon, Oh-Hoon; Yoo, Tae Hyeon; Othon, Christina M; Van Deventer, James A; Tirrell, David A; Zewail, Ahmed H

    2010-10-05

    Water-protein interactions dictate many processes crucial to protein function including folding, dynamics, interactions with other biomolecules, and enzymatic catalysis. Here we examine the effect of surface fluorination on water-protein interactions. Modification of designed coiled-coil proteins by incorporation of 5,5,5-trifluoroleucine or (4S)-2-amino-4-methylhexanoic acid enables systematic examination of the effects of side-chain volume and fluorination on solvation dynamics. Using ultrafast fluorescence spectroscopy, we find that fluorinated side chains exert electrostatic drag on neighboring water molecules, slowing water motion at the protein surface.

  6. Hydration dynamics at fluorinated protein surfaces

    PubMed Central

    Kwon, Oh-Hoon; Yoo, Tae Hyeon; Othon, Christina M.; Van Deventer, James A.; Tirrell, David A.; Zewail, Ahmed H.

    2010-01-01

    Water-protein interactions dictate many processes crucial to protein function including folding, dynamics, interactions with other biomolecules, and enzymatic catalysis. Here we examine the effect of surface fluorination on water-protein interactions. Modification of designed coiled-coil proteins by incorporation of 5,5,5-trifluoroleucine or (4S)-2-amino-4-methylhexanoic acid enables systematic examination of the effects of side-chain volume and fluorination on solvation dynamics. Using ultrafast fluorescence spectroscopy, we find that fluorinated side chains exert electrostatic drag on neighboring water molecules, slowing water motion at the protein surface. PMID:20855583

  7. Stereospecific Electrophilic Fluorination of Alkylcarbastannatrane Reagents.

    PubMed

    Ma, Xinghua; Diane, Mohamed; Ralph, Glenn; Chen, Christine; Biscoe, Mark R

    2017-10-02

    We report the use of isolable primary and secondary alkylcarbastannatrane nucleophiles in site-specific fluorination reactions. These reactions occur without the need for transition metal catalysis or in situ activation of the nucleophile. In the absence of the carbastannatrane backbone, alkyltin nucleophiles exhibit no activity towards fluorination. When enantioenriched alkylcarbastannatranes are employed, fluorination occurs predominately via a stereoinvertive mechanism to generate highly enantioenriched alkyl fluoride compounds. These conditions can also be extended to stereospecific chlorination, bromination, and iodination reactions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Liquid crystals based on fluorinated carbohydrates.

    PubMed

    Miethchen, R; Hein, M

    2000-07-10

    Fluorine introduced in the hydrophilic or the hydrophobic region of amphiphiles influences the thermomesomorphy of amphiphilic and monophilic fluorosugars in a very specific manner. This paper is the first review about chiral mesogens based on fluorinated carbohydrates. It covers the literature published so far. Analytical objectives are given to: (i) Effects of fluorine atoms on the H-bonding network of the hydrophilic region of sugar amphiphiles; (ii) Effects of perfluoroalkyl chains compared to alkyl chains; (iii) Polymorphism, e.g., also formation of smectic S(C)* phases.

  9. Super-hydrophobic fluorine containing aerogels

    DOEpatents

    Coronado, Paul R.; Poco, John F.; Hrubesh, Lawrence W.

    2007-05-01

    An aerogel material with surfaces containing fluorine atoms which exhibits exceptional hydrophobicity, or the ability to repel liquid water. Hydrophobic aerogels are efficient absorbers of solvents from water. Solvents miscible with water are separated from it because the solvents are more volatile than water and they enter the porous aerogel as a vapor across the liquid water/solid interface. Solvents that are immisicble with water are separated from it by selectively wetting the aerogel. The hydrophobic property is achieved by formulating the aerogel using fluorine containing molecules either directly by addition in the sol-gel process, or by treating a standard dried aerogel using the vapor of fluorine containing molecules.

  10. RECOVERY OF Pu VALUES BY FLUORINATION AND FRACTIONATION

    DOEpatents

    Brown, H.S.; Webster, D.S.

    1959-01-20

    A method is presented for the concentration and recovery of plutonium by fluorination and fractionation. A metallic mass containing uranium and plutonium is heated to 250 C and contacted with a stream of elemental fluorine. After fluorination of the metallic mass, the rcaction products are withdrawn and subjected to a distillation treatment to separate the fluorination products of uranium and to obtain a residue containing the fluorination products of plutonium.

  11. Fluorination utilizing thermodynamically unstable fluorides and fluoride salts thereof

    DOEpatents

    Bartlett, Neil; Whalen, J. Marc; Chacon, Lisa

    2000-12-12

    A method for fluorinating a carbon compound or cationic carbon compound utilizes a fluorination agent selected from thermodynamically unstable nickel fluorides and salts thereof in liquid anhydrous hydrogen fluoride. The desired carbon compound or cationic organic compound to undergo fluorination is selected and reacted with the fluorination agent by contacting the selected organic or cationic organic compound and the chosen fluorination agent in a reaction vessel for a desired reaction time period at room temperature or less.

  12. Molecular beam epitaxy growth of SmFeAs(O,F) films with Tc = 55 K using the new fluorine source FeF3

    NASA Astrophysics Data System (ADS)

    Sakoda, Masahito; Ishii, Akihiro; Takinaka, Kenji; Naito, Michio

    2017-07-01

    REFeAs(O,F) (RE: rare-earth element) has the highest-Tc (˜58 K) among the iron-based superconductors, but a thin-film growth of REFeAs(O,F) is difficult. This is because it is not only a complex compound consisting of five elements but also requires doping of highly reactive fluorine to achieve superconductivity. We have reported in our previous article that fluorine can be supplied to a film by subliming solid-state fluorides such as FeF2 or SmF3. In this article, we report on the growth of SmFeAs(O,F) using FeF3 as an alternative fluorine source. FeF3 is solid at ambient temperatures and decomposes at temperatures as low as 100-200 °C, and releases fluorine-containing gas during the thermal decomposition. With this alternative fluorine source, we have grown SmFeAs(O,F) films with Tc as high as 55 K. This achievement demonstrates that FeF3 has potential as a fluorine source that can be employed ubiquitously for a thin-film growth of any fluorine containing compounds. One problem specific to FeF3 is that the compound is highly hydroscopic and contains a substantial amount of water even in its anhydrous form. In this article, we describe how to overcome this specific problem.

  13. Functionalization of graphene quantum dots by fluorine: Preparation, properties, application, and their mechanisms

    NASA Astrophysics Data System (ADS)

    Zuo, Wenbin; Tang, Libin; Xiang, Jinzhong; Ji, Rongbin; Luo, Lin; Rogée, Lukas; Ping Lau, Shu

    2017-05-01

    Graphene quantum dots (GQDs) possess unique photoelectronic properties ascribed to quantum confinement and edge effects, which have evoked important development and wide application in the optoelectronic field. Doping GQDs with heteroatoms can further modulate the energy band structure and thus produce unexpected properties. Herein, we obtained fluorine-doped GQDs (F-GQDs) by adopting an effective preparation technique, which includes the treatment of the as-prepared reaction precursor, fluorinated carbon fibers, with ultrasonic liquid phase exfoliation. The proposed method is simple, handy, and low-cost, opening up an alternate approach to prepare F-GQDs. Through multiple characterization techniques, the effective incorporation of fluorine in GQDs was confirmed, and the as-prepared F-GQDs exhibit excellent photoelectrical properties and good ultraviolet absorption performances. Accordingly, we have fabricated a vertical photovoltaic UV detector based on F-GQDs. The unoptimized device has an exceptionally large ratio of photocurrent to dark current of magnitude ˜105, and its detectivity (D*) could stabilize at around 1012 Jones at room temperature under λ = 365 nm light irradiation and reverse bias voltage.

  14. The Electrochemical Fluorination of Organosilicon Compounds

    NASA Technical Reports Server (NTRS)

    Seaver, Robert E.

    1961-01-01

    The electrochemical fluorination of tetramethylsilane, hexamethyl-disiloxane, diethyldichlorosilane, amyltrichlorosilane, and phenyltri-chlorosilane was conducted in an Inconel cell equipped with nickel electrodes. A potential of approximately 5.0 volts and a current of approximately 1.0 ampere were used for the electrolysis reaction. In all cases the fluorinations resulted in considerable scission of the carbon-silicon bonds yielding hydrogen and the various fluorinated decomposition products; no fluoroorganosilicon compounds were identified. The main decomposition products were silicon tetrafluoride, the corresponding fluorinated carbon compounds, and the various organofluorosilanes. It is suggested that this is due to the nucleophilic attack of the fluoride ion (or complex fluoride ion) on the carbon-silicon bond.

  15. Opening a bandgap in graphene by fluorination

    NASA Astrophysics Data System (ADS)

    Wang, Bei; Cooley, B. J.; Cheng, S.-H.; Zou, K.; Hao, Q. Z.; Okino, F.; Sofo, J.; Samarth, N.; Zhu, J.

    2010-03-01

    The zero bandgap of graphene underpins many of its unique electronic properties. A band gap is desirable, however, for many electronic and optical applications. Chemical modifications of the graphene sheet can drastically change its conductivity. Following this strategy, both oxygenation and hydrogenation of graphene have been demonstrated. In this study, we present a reversible method of modifying the band structure of graphene through fluorination. Reacting graphite with fluorine gas at high temperature results in nearly 100% fluorinated graphite fluoride, where each carbon atom is covalently bonded to a fluorine atom. Remarkably, the layered structure and hexagonal in-plane crystalline order are preserved in graphite fluoride. We obtain few-layer graphene fluoride through stamping method and report the optical and transport properties of this extremely insulating 2D compound, which is expected to be a wide band gap semiconductor.

  16. A New Approach to Highly Fluorinated Lubricants.

    DTIC Science & Technology

    1987-10-30

    DSIM gmi C1L) KPT OF CNEHISTRY UR MS ET .. 30 OCT 37 RFOSR-TR-S?-1762 IULSES FIDS3424SS4F/O 11/ . EEiI EEEEEEm.’...omo S13,6 U L6 &0-2. 11111s~ MA IL...treated these with fluorine, diluted with nitrogen, and cooled to -800C. However, we found it difficult to control the fluorination of these materials

  17. Reactivity of simulated lunar material with fluorine

    NASA Technical Reports Server (NTRS)

    Odonnell, P. M.

    1972-01-01

    Simulated lunar surface material was caused to react with fluorine to determine the feasibility of producing oxygen by this method. The maximum total fluorine pressure used was 53.3 kilonewtons per square meter (400 torr) at temperatures up to 523 K (250 C). Postreaction analysis of both the gas and solid phases indicated that the reaction is feasible but that the efficiency is only about 4 percent of that predicted by theory.

  18. Fluorinated graphene suspension for inkjet printed technologies.

    PubMed

    Nebogatikova, N A; Antonova, I V; Kurkina, I I; Soots, R A; Vdovin, V I; Timofeev, V B; Smagulova, S A; Prinz, V Ya

    2016-05-20

    The possibility to control the size of the flakes of graphene suspension in the course of their fluorination in an aqueous hydrofluoric acid solution was demonstrated. The effect of the suspension composition, the fluorination time, temperature and thermal stress on the fragmentation process was investigated. The corrugation of suspension flakes, which occurs at fluorination due to a difference in the constants of graphene and fluorographene lattices, leads to the appearance of nonuniform mechanical stresses. The fact that the flake size after fragmentation is determined by the size of corrugation allows the assumption that the driving force of fragmentation is this mechanical stress. This assumption is confirmed by the break of the corrugated layers from flakes under thermal stress. Moreover, fluorination treatment at elevated temperatures (∼70 °C) significantly accelerates the fragmentation process. Suspensions of fluorinated graphene with nanometer size flakes are of interest for the development of 2D ink-jet printing technologies and production of thermally and chemically stable dielectric films for nanoelectronics. The printed fluorinated graphene films on silicon and flexible substrates have been demonstrated and the charges in metal-insulator-semiconductor structures have been estimated as the ultra low values of (0.5-2) × 10(10) cm(-2).

  19. Fluorinated graphene suspension for inkjet printed technologies

    NASA Astrophysics Data System (ADS)

    Nebogatikova, N. A.; Antonova, I. V.; Kurkina, I. I.; Soots, R. A.; Vdovin, V. I.; Timofeev, V. B.; Smagulova, S. A.; Prinz, V. Ya

    2016-05-01

    The possibility to control the size of the flakes of graphene suspension in the course of their fluorination in an aqueous hydrofluoric acid solution was demonstrated. The effect of the suspension composition, the fluorination time, temperature and thermal stress on the fragmentation process was investigated. The corrugation of suspension flakes, which occurs at fluorination due to a difference in the constants of graphene and fluorographene lattices, leads to the appearance of nonuniform mechanical stresses. The fact that the flake size after fragmentation is determined by the size of corrugation allows the assumption that the driving force of fragmentation is this mechanical stress. This assumption is confirmed by the break of the corrugated layers from flakes under thermal stress. Moreover, fluorination treatment at elevated temperatures (˜70 °C) significantly accelerates the fragmentation process. Suspensions of fluorinated graphene with nanometer size flakes are of interest for the development of 2D ink-jet printing technologies and production of thermally and chemically stable dielectric films for nanoelectronics. The printed fluorinated graphene films on silicon and flexible substrates have been demonstrated and the charges in metal-insulator-semiconductor structures have been estimated as the ultra low values of (0.5-2) × 1010 cm-2.

  20. 40 CFR 415.400 - Applicability; description of the fluorine production subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... fluorine production subcategory. 415.400 Section 415.400 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Fluorine Production Subcategory § 415.400 Applicability; description of the fluorine production... fluorine by the liquid hydrofluoric acid electrolysis process....

  1. 40 CFR 415.400 - Applicability; description of the fluorine production subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... fluorine production subcategory. 415.400 Section 415.400 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Fluorine Production Subcategory § 415.400 Applicability; description of the fluorine production... fluorine by the liquid hydrofluoric acid electrolysis process....

  2. 40 CFR 415.400 - Applicability; description of the fluorine production subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... fluorine production subcategory. 415.400 Section 415.400 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Fluorine Production Subcategory § 415.400 Applicability; description of the fluorine production... fluorine by the liquid hydrofluoric acid electrolysis process....

  3. 40 CFR 415.400 - Applicability; description of the fluorine production subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... fluorine production subcategory. 415.400 Section 415.400 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Fluorine Production Subcategory § 415.400 Applicability; description of the fluorine production... fluorine by the liquid hydrofluoric acid electrolysis process....

  4. 40 CFR 415.400 - Applicability; description of the fluorine production subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... fluorine production subcategory. 415.400 Section 415.400 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Fluorine Production Subcategory § 415.400 Applicability; description of the fluorine production... fluorine by the liquid hydrofluoric acid electrolysis process....

  5. 18. A VIEW EAST, SHOWING THE HEAVILY WOODED BANKS OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. A VIEW EAST, SHOWING THE HEAVILY WOODED BANKS OF THE ST. JOSEPH RIVER. THIS IS TYPICAL OF THE RIVERSIDE ENVIRONMENT OF THE BRIDGE. - County Line Bridge, Spanning St. Joseph River at State Route 219, 0.6 mile south of U.S. Route 20, Osceola, St. Joseph County, IN

  6. Transition metal catalysis and nucleophilic fluorination.

    PubMed

    Hollingworth, Charlotte; Gouverneur, Véronique

    2012-03-21

    Transition metal catalyzed transformations using fluorinating reagents have been developed extensively for the preparation of synthetically valuable fluorinated targets. This is a topic of critical importance to facilitate laboratory and industrial chemical synthesis of fluorine containing pharmaceuticals and agrochemicals. Translation to (18)F-radiochemistry is also emerging as a vibrant research field because functional imaging based on Positron Emission Tomography (PET) is increasingly used for both diagnosis and pharmaceutical development. This review summarizes how fluoride sources have been used for the catalytic nucleophilic fluorination of various substrates inclusive of aryl triflates, alkynes, allylic halides, allylic esters, allylic trichloroacetimidates, benzylic halides, tertiary alkyl halides and epoxides. Until recently, progress in this field of research has been slow in part because of the challenges associated with the dual reactivity profile of fluoride (nucleophile or base). Despite these difficulties, some remarkable breakthroughs have emerged. This includes the demonstration that Pd(0)/Pd(II)-catalyzed nucleophilic fluorination to access fluoroarenes from aryl triflates is feasible, and the first examples of Tsuji-Trost allylic alkylation with fluoride using either allyl chlorides or allyl precursors bearing O-leaving groups. More recently, allylic fluorides were also made accessible under iridium catalysis. Another reaction, which has been greatly improved based on careful mechanistic work, is the catalytic asymmetric hydrofluorination of meso epoxides. Notably, each individual transition metal catalyzed nucleophilic fluorination reported to date employs a different F-reagent, an observation indicating that this area of research will benefit from a larger pool of nucleophilic fluoride sources. In this context, a striking recent development is the successful design, synthesis and applications of a fluoride-derived electrophilic late stage

  7. Effect of boron doping on first-order Raman scattering in superconducting boron doped diamond films

    NASA Astrophysics Data System (ADS)

    Kumar, Dinesh; Chandran, Maneesh; Ramachandra Rao, M. S.

    2017-05-01

    Aggregation of impurity levels into an impurity band in heavily boron doped diamond results in a background continuum and discrete zone centre phonon interference during the inelastic light scattering process. In order to understand the Raman scattering effect in granular BDD films, systematically heavily doped samples in the semiconducting and superconducting regimes have been studied using the excitation wavelengths in the UV and visible regions. A comprehensive analysis of the Fano resonance effect as a function of the impurity concentrations and the excitation frequencies is presented. Various Raman modes available in BDD including signals from the grain boundaries are discussed.

  8. 2-DE using hemi-fluorinated surfactants.

    PubMed

    Starita-Geribaldi, Mireille; Thebault, Pascal; Taffin de Givenchy, Elisabeth; Guittard, Frederic; Geribaldi, Serge

    2007-07-01

    The synthesis of hemi-fluorinated zwitterionic surfactants was realized and assessed for 2-DE, a powerful separation method for proteomic analysis. These new fluorinated amidosulfobetaine (FASB-p,m) were compared to their hydrocarbon counterparts amidosulfobetaine (ASB-n) characterized by a hydrophilic polar head, a hydrophobic and lipophilic tail, and an amido group as connector. The tail of these FASB surfactants was in part fluorinated resulting in the modulation of its lipophilicity (or oleophobicity). Their effect on the red blood cell (RBC) membrane showed a specific solubilization depending on the length of the hydrophobic part. A large number of polypeptide spots appeared in the 2-DE patterns by using FASB-p,m. The oleophobic character of these surfactants was confirmed by the fact that Band 3, a highly hydrophobic transmembrane protein, was not solubilized by these fluorinated structures. The corresponding pellet was very rich in Band 3 and could then be solubilized by using a strong detergent such as amidosulfobetaine with an alkyl tail containing 14 carbon atoms (ASB-14). Thus, these hemi-fluorinated surfactants appeared as powerful tools when used at the first step of a two-step solubilization strategy using a hydrocarbon homologous surfactant in the second step.

  9. Fluorinating hexagonal boron nitride into diamond-like nanofilms with tunable band gap and ferromagnetism.

    PubMed

    Zhang, Zhuhua; Zeng, Xiao Cheng; Guo, Wanlin

    2011-09-21

    Cubic boron nitride (c-BN) possesses a number of extreme properties rivaling or surpassing those of diamond. Especially, owing to the high chemical stability, c-BN is desired for fabricating electronic devices that can stand up to harsh environments. However, realization of c-BN-based functional devices is still a challenging task due largely to the subtlety in the preparation of high-quality c-BN films with uniform thickness and controllable properties. Here, we present a simple synthetic strategy by surface fluorination of few-layered hexagonal boron nitride (h-BN) sheets to produce thermodynamically favorable F-terminated c-BN nanofilms with an embedded N-N bond layer and strong inbuilt electric polarization. Due to these specific features, the fluorinated c-BN nanofilms have controllable band gap by thickness or inbuilt and applied electric fields. Especially, the produced nanofilms can be tuned into substantial ferromagnetism through electron doping within a reasonable level. The electron-doping-induced deformation ratio of the c-BN nanofilms is found to be 1 order of magnitude higher than those of carbon nanotubes and graphene. At sufficient high doping levels, the nanofilm can be cleaved peculiarly along the N-N bond layer into diamond-like BN films. As the proposed synthesis strategy of the fluorinated c-BN nanofilms is well within the reach of current technologies, our results represent an extremely cost-effective approach for producing high-quality c-BN nanofilms with tunable electronic, magnetic, and electromechanical properties for versatile applications.

  10. Experiments shed new light on nickel-fluorine reactions

    NASA Technical Reports Server (NTRS)

    Fischer, J.; Gunther, W.; Jarry, R. L.

    1967-01-01

    Isotopic tracer experiments and scale-impingement experiments show fluorine to be the migrating species through the nickel fluoride scale formed during the fluorination of nickel. This is in contrast to nickel oxide scales, where nickel is the migrating species.

  11. Electrokinetic remediation of fluorine-contaminated soil: conditioning of anolyte.

    PubMed

    Kim, Do-Hyung; Jeon, Chil-Sung; Baek, Kitae; Ko, Sung-Hwan; Yang, Jung-Seok

    2009-01-15

    The feasibility of anolyte conditioning on electrokinetic remediation of fluorine-contaminated soil was investigated with a field soil. The initial concentration of fluorine, pH and water content in the soil were 414mg/kg, 8.91 and 15%, respectively. Because the extraction of fluorine generally increased with the soil pH, the pH of the anode compartment was controlled by circulating strong alkaline solution to enhance the extraction of fluorine during electrokinetic remediation. The removal of fluorine increased with the concentration of the alkaline solution and applied current density and fluorine removed up to 75.6% within 14 days. Additionally, anolyte conditioning sharply increased the electro-osmotic flow, which enhanced the removal of fluorine in this study. In many respects, anolyte conditioning in electrokinetic remediation of fluorine-contaminated soil will be a promising technology.

  12. Short and efficient synthesis of fluorinated δ-lactams.

    PubMed

    Cogswell, Thomas J; Donald, Craig S; Long, De-Liang; Marquez, Rodolfo

    2015-01-21

    The diastereoselective synthesis of fluorinated δ-lactams has been achieved through an efficient five step process. The route can tolerate a range of functionalities, and provides a quick route for the generation of new fluorinated medicinal building blocks.

  13. Radiosyntheses using Fluorine-18: the Art and Science of Late Stage Fluorination

    PubMed Central

    Cole, Erin L.; Stewart, Megan N.; Littich, Ryan; Hoareau, Raphael; Scott, Peter J. H.

    2014-01-01

    Positron (β+) emission tomography (PE) is a powerful, noninvasive tool for the in vivo, three-dimensional imaging of physiological structures and biochemical pathways. The continued growth of PET imaging relies on a corresponding increase in access to radiopharmaceuticals (biologically active molecules labeled with short-lived radionuclides such as fluorine-18). This unique need to incorporate the short-lived fluorine-18 atom (t1/2 = 109.77 min) as late in the synthetic pathway as possible has made development of methodologies that enable rapid and efficient late stage fluorination an area of research within its own right. In this review we describe strategies for radiolabeling with fluorine-18, including classical fluorine-18 radiochemistry and emerging techniques for late stage fluorination reactions, as well as labeling technologies such as microfluidics and solid-phase radiochemistry. The utility of fluorine-18 labeled radiopharmaceuticals is showcased through recent applications of PET imaging in the healthcare, personalized medicine and drug discovery settings. PMID:24484425

  14. The rare fluorinated natural products and biotechnological prospects for fluorine enzymology.

    PubMed

    Chan, K K Jason; O'Hagan, David

    2012-01-01

    Nature has hardly evolved a biochemistry of fluorine although there is a low-level occurrence of fluoroacetate found in selected tropical and subtropical plants. This compound, which is generally produced in low concentrations, has been identified in the plants due to its high toxicity, although to date the biosynthesis of fluoroacetate in plants remains unknown. After that, fluorinated entities in nature are extremely rare, and despite increasingly sophisticated screening and analytical methods applied to natural product extraction, it has been 25 years since the last bona fide fluorinated natural product was identified from an organism. This was the reported isolation of the antibiotic 4-fluorothreonine and the toxin fluoroacetate in 1986 from Streptomyces cattleya. This bacterium has proven amenable to biochemical investigation, the fluorination enzyme (fluorinase) has been isolated and characterized, and the biosynthetic pathway to these bacterial metabolites has been elucidated. Also the fluorinase gene has been cloned into a host bacterium (Salinispora tropica), and this has enabled the de novo production of a bioactive fluorinated metabolite from fluoride ion, by genetic engineering. Biotechnological manipulation of the fluorinase offers the prospects for the assembly of novel fluorinated metabolites by fermentation technology. This is particularly attractive, given the backdrop that about 15-20% of pharmaceuticals licensed each year (new chemical entities) contain a fluorine atom.

  15. Fluorine in pharmaceuticals: looking beyond intuition.

    PubMed

    Müller, Klaus; Faeh, Christoph; Diederich, François

    2007-09-28

    Fluorine substituents have become a widespread and important drug component, their introduction facilitated by the development of safe and selective fluorinating agents. Organofluorine affects nearly all physical and adsorption, distribution, metabolism, and excretion properties of a lead compound. Its inductive effects are relatively well understood, enhancing bioavailability, for example, by reducing the basicity of neighboring amines. In contrast, exploration of the specific influence of carbon-fluorine single bonds on docking interactions, whether through direct contact with the protein or through stereoelectronic effects on molecular conformation of the drug, has only recently begun. Here, we review experimental progress in this vein and add complementary analysis based on comprehensive searches in the Cambridge Structural Database and the Protein Data Bank.

  16. Method for fluorination of uranium oxide

    DOEpatents

    Petit, George S.

    1987-01-01

    Highly pure uranium hexafluoride is made from uranium oxide and fluorine. The uranium oxide, which includes UO.sub.3, UO.sub.2, U.sub.3 O.sub.8 and mixtures thereof, is introduced together with a small amount of a fluorine-reactive substance, selected from alkali chlorides, silicon dioxide, silicic acid, ferric oxide, and bromine, into a constant volume reaction zone. Sufficient fluorine is charged into the zone at a temperature below approximately 0.degree. C. to provide an initial pressure of at least approximately 600 lbs/sq. in. at the ambient atmospheric temperature. The temperature is then allowed to rise in the reaction zone until reaction occurs.

  17. A reactive flow model for heavily aluminized cyclotrimethylene-trinitramine

    SciTech Connect

    Kim, Bohoon; Lee, Kyung-Cheol; Yoh, Jack J.; Park, Jungsu

    2014-07-14

    An accurate and reliable prediction of reactive flow is a challenging task when characterizing an energetic material subjected to an external shock impact as the detonation transition time is on the order of a micro second. The present study aims at investigating the size effect behavior of a heavily aluminized cyclotrimethylene-trinitramine (RDX) which contains 35% of aluminum by using a detonation rate model that includes ignition and growth mechanisms for shock initiation and subsequent detonation. A series of unconfined rate stick tests and two-dimensional hydrodynamic simulations are conducted to construct the size effect curve which represents the relationship between detonation velocity and inverse radius of the charge. A pressure chamber test is conducted to further validate the reactive flow model for predicting the response of a heavily aluminized high explosive subjected to an external impact.

  18. Variations in structure and electrochemistry of iron- and titanium-doped lithium nickel manganese oxyfluoride spinels

    NASA Astrophysics Data System (ADS)

    Höweling, Andres; Stenzel, David; Gesswein, Holger; Kaus, Maximilian; Indris, Sylvio; Bergfeldt, Thomas; Binder, Joachim R.

    2016-05-01

    Doping of cathode materials can considerably improve electrochemical performance and stability. Here, the high-voltage LiNi0.5Mn1.5O4 spinel is used as a candidate material. It is high-voltage cycling at a potential of approximately 4.7 V and the ability to host 2 eq. Li, thus leading to a theoretical capacity of 294 mAh g-1, that makes this material interesting. In order to improve stability and electronic conductivity, the spinel is doped with titanium and iron. Cycling in a voltage range of 2.0-5.0 V leads to a cooperative Jahn-Teller distortion accompanied by a phase transformation from cubic to tetragonal symmetry. This causes a severe capacity fade. To improve capacity retention, the as-prepared spinel is post-doped with fluorine. Influence of different fluorine amounts in LiNi0.5Mn1.4Fe0.1Ti0.027O4-xFx (x = 0-0.3) on the capacity and stability is analyzed. The initial capacities decrease with increasing fluorine content but the low voltage capacity is stabilized. Best electrochemical results are obtained with a fluorine content of x = 0.15. Furthermore, an additional redox couple is found. The intensity of this depends on the fluorine content. It is assumed that manganese, either in the tetrahedral sites or in octahedral sites, bound to fluorine lead to a higher voltage.

  19. Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Shibib, M. A.; Lindholm, F. A.; Therez, F.

    1979-01-01

    The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.

  20. Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Shibib, M. A.; Lindholm, F. A.; Therez, F.

    1979-01-01

    The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.

  1. An Efficient and Accurate Method of Estimating Substrate Noise Coupling in Heavily Doped Substrates

    DTIC Science & Technology

    2005-08-24

    αij values obtained from the original contact sizes. The αij calculated using the model is the same for both the cases. The error from this model is...substrate resistances in large circuits,” in Proc. European Design and Test Conference, March 1996, pp. 560-565. [5] E. Charbon , R. Gharpurey, P. Miliozzi...and E. Charbon , “Substrate coupling: modeling, simulation and design perspectives,” in Proc. of Quality Electronic Design, March 2004, pp. 283-290. [8

  2. Phosphorus and carrier density of heavily n-type doped germanium

    SciTech Connect

    Takinai, K.; Wada, K.

    2016-05-14

    The threshold current density of n-type, tensile-strained Ge lasers strongly depends on the electron density. Although optical net gain analyses indicate that the optimum electron density should be on the order of 1 × 10{sup 20} cm{sup −3} to get the lowest threshold, it is not a simple task to increase the electron density beyond the mid range of 10{sup 19} cm{sup −3}. The present paper analyzes the phenomenon where electron density is not proportional to phosphorus donor density, i.e., “saturation” phenomenon, by applying the so-called amphoteric defect model. The analyses indicate that the saturation phenomenon can be well explained by the charge compensation between the phosphorus donors (P{sup +}) and doubly negative charged Ge vacancies (V{sup 2−}).

  3. Spectroscopic properties of heavily Ho3+-doped barium yttrium fluoride crystals

    NASA Astrophysics Data System (ADS)

    Ji, En-Cai; Liu, Qiang; Nie, Ming-Ming; Luo, Hui; Hu, Yu-Xi; Guan, Zhou-Guo; Gong, Ma-Li

    2015-09-01

    The 30 at.% Ho: BaY2F8 crystals were grown by the Czochralski method, and their spectroscopic properties are analyzed systematically by standard Judd-Ofelt theory. The Judd-Ofelt intensity parameters are estimated to be Ω2 = 6.74 × 10-20 cm2, Ω4 = 1.20 × 10-20 cm2, and Ω6 = 0.66 × 10-20 cm2, and the fluorescence branching ratios and radiative lifetimes for a series of excited state manifolds are also determined. The emission cross sections with our measured infrared luminescence spectra, especially important for 4.1 μm, are calculated to be about 4.37 × 10-21 cm2. The crystal quality is preliminarily tested through a mid-infrared laser emission experiment. Project supported by the National Natural Science Foundation of China (Grant No. 61275146), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120002110066), and the Special Program of the Co-construction with Beijing Municipal Government of China (Grant No. 20121000302).

  4. Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films

    SciTech Connect

    Gergel, V. A. Verhovtseva, A. V.

    2010-10-15

    A new quantum model of electron accumulation at positively charged boundaries of semiconductor films has been developed. It is based on the well-known concepts of quantum confinement of transverse electron motion in a uniform electric field, the role of which is played by the effective field of attraction to positive surface donor centers. Electrons with a surface density equal to the donor concentration occupy the corresponding quasi-discrete states according to the Fermi statistics. At reasonable concentrations all the electrons of the accumulation layer are mainly concentrated at the first quantum-confinement level. Ultra-high built-in fields on the order of the atomic level (10{sup 8} V/cm) correspond to the onset of filling the third level. The potential profile, which describes the interaction of the accumulation-layer electrons with other charged particles (including holes) is calculated by double integration of the Poisson equation with the electron density in the form of squares of the corresponding segments of the Airy function. Its boundary value-the surface potential-describes the effect of the electron-accumulation layer on the external electric circuit. The obtained dependence of the surface potential on the resulting boundary electric field (including that induced by the built-in charge) is easily transformed into the corresponding capacitance-voltage characteristics.

  5. Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Bauhuis, G. J.; Hageman, P. R.; Larsen, P. K.

    1998-07-01

    In order to obtain metalorganic chemical vapor deposition (MOCVD) grown (Al xGa 1- x) 0.5In 0.5P ( x=0.4 and 0.7) with as high as possible hole concentrations two different approaches were investigated. First, as a reference, AlGaInP was grown with the traditional precursor combination trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminium (TMAl) and di-ethylzinc (DEZn) as a dopant. This was compared with layers grown with dimethylamine-alane (DMEAAl) as aluminium precursor and tri-ethylgallium (TEGa) instead of TMGa. The electrical activity of zinc in layers grown with DMEAAl and TEGa is found to be much higher than in layers grown with TMAl and TMGa. Oxygen was identified as the main cause of Zn-acceptor compensation. The other dopant, magnesium, was used with the conventional group III precursors (TMGa, TMIn and TMAl). With both dopants, hole concentrations above 10 18 cm -3 for x=0.4 and close to 10 18 cm -3 for x=0.7 were obtained at growth temperatures of 640 and 720°C.

  6. Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Broder, J. D.; Mazaris, G. A., Jr.; Hsu, L.

    1978-01-01

    Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

  7. Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Hsu, L. C.

    1977-01-01

    Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

  8. Efficient fluorinating agent through topochemical fluorination of Co-Fe layered double hydroxides.

    PubMed

    Louvain, Nicolas; Peyroux, Jérémy; Dubois, Marc; Simond, Wikenson; Leroux, Fabrice

    2014-01-21

    Mixed-metal inorganic fluoride, Co0.60Fe0.40F3, solid solutions are obtained through topochemical reactions of Co2FeCl(OH)6·2H2O LDH with molecular fluorine, F2, at temperatures as low as 100 °C. This solid solution possesses interesting F(•)-releasing ability, and its efficiency as a solid-state fluorinating agent is demonstrated on a commercial polyethylene film. (19)F solid state NMR and contact angle measurements underline the efficient fluorination of this polymer.

  9. Does fluorine participate in halogen bonding?

    PubMed

    Eskandari, Kiamars; Lesani, Mina

    2015-03-16

    When R is sufficiently electron withdrawing, the fluorine in the R-F molecules could interact with electron donors (e.g., ammonia) and form a noncovalent bond (F⋅⋅⋅N). Although these interactions are usually categorized as halogen bonding, our studies show that there are fundamental differences between these interactions and halogen bonds. Although the anisotropic distribution of electronic charge around a halogen is responsible for halogen bond formations, the electronic charge around the fluorine in these molecules is spherical. According to source function analysis, F is the sink of electron density at the F⋅⋅⋅N BCP, whereas other halogens are the source. In contrast to halogen bonds, the F⋅⋅⋅N interactions cannot be regarded as lump-hole interactions; there is no hole in the valence shell charge concentration (VSCC) of fluorine. Although the quadruple moment of Cl and Br is mainly responsible for the existence of σ-holes, it is negligibly small in the fluorine. Here, the atomic dipole moment of F plays a stabilizing role in the formation of F⋅⋅⋅N bonds. Interacting quantum atoms (IQA) analysis indicates that the interaction between halogen and nitrogen in the halogen bonds is attractive, whereas it is repulsive in the F⋅⋅⋅N interactions. Virial-based atomic energies show that the fluorine, in contrast to Cl and Br, stabilize upon complex formation. According to these differences, it seems that the F⋅⋅⋅N interactions should be referred to as "fluorine bond" instead of halogen bond.

  10. Experience with fluorine and its safe use as a propellant

    NASA Technical Reports Server (NTRS)

    Bond, D. L.; Guenther, M. E.; Stimpson, L. D.; Toth, L. R.; Young, D. L.

    1979-01-01

    The industrial and the propulsion experience with fluorine and its derivatives is surveyed. The hazardous qualities of fluorine and safe handling procedures for the substance are emphasized. Procedures which fulfill the safety requirements during ground operations for handling fluorinated propulsion systems are discussed. Procedures to be implemented for use onboard the Space Transportation System are included.

  11. 40 CFR 721.484 - Fluorinated acrylic copolymer (generic name).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Fluorinated acrylic copolymer (generic... Specific Chemical Substances § 721.484 Fluorinated acrylic copolymer (generic name). (a) Chemical substance... fluorinated acrylic copolymer (PMN P-95-1208) is subject to reporting under this section for the...

  12. 40 CFR 721.484 - Fluorinated acrylic copolymer (generic name).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Fluorinated acrylic copolymer (generic... Specific Chemical Substances § 721.484 Fluorinated acrylic copolymer (generic name). (a) Chemical substance... fluorinated acrylic copolymer (PMN P-95-1208) is subject to reporting under this section for the...

  13. Fluorine photochemistry in the stratosphere. [effect on ozone

    NASA Technical Reports Server (NTRS)

    Stolarski, R. S.; Rundel, R. D.

    1975-01-01

    The photochemistry of fluorine in the stratosphere is surveyed in order to estimate the effect on ozone of fluorine atoms released by the breakdown of chlorofluoromethanes. The catalytic efficiency for ozone destruction by fluorine is found to be less than .0001 that of chlorine in the altitude range from 25 to 50 km.

  14. New Experimental Challenges in Elemental Fluorine Chemistry; an Emerging Technology

    DTIC Science & Technology

    1987-10-31

    20332-6448 61102F 2303 B2 11. TITLE (Include Security Classification) NEW EXPERIMENTAL CHALLENGES IN ELEMENTAL FLUORINE CHEMISTRY; AN EMERGING TECHNOLOGY 12...TITLE: New Experimental Challenges in Elemental Fluorine Chemistry; An Emerging Technology PRINCIPAL INVESTIGATOR: Professor Richard J. Lagow...EXPERIMENTAL CHALLENGES IN ELEMENTAL FLUORINE CHEMISTRY; AN EMERGING TECHNOLOGY Grant Number AFOSR-87-0016 Presented by Professor Richard J. Lagow

  15. Oxygen extraction from lunar soil by fluorination

    NASA Technical Reports Server (NTRS)

    Seboldt, W.; Lingner, S.; Hoernes, S.; Grimmeisen, W.

    1991-01-01

    Mining and processing of lunar material could possibly lead to more cost-efficient scenarios for permanent presence of man in space and on the Moon. Production of oxygen for use as propellant seems especially important. Different candidate processes for oxygen-extraction from lunar soil were proposed, of which the reduction of ilmenite by hydrogen was studied most. This process, however, needs the concentration of ilmenite from lunar regolith to a large extent and releases oxygen only with low efficiency. Another possibility - the fluorination method - which works with lunar bulk material as feedstock is discussed. Liberation of oxygen from silicate or oxide materials by fluorination methods has been applied in geoscience since the early sixties. The fact that even at moderate temperatures 98 to 100 percent yields can be attained, suggests that fluorination of lunar regolith could be an effective way of propellant production. Lunar soil contains about 50 percent oxygen by weight which is gained nearly completely through this process as O2 gas. The second-most element Si is liberated as gaseous SiF4. It could be used for production of Si-metal and fluorine-recycling. All other main elements of lunar soil will be converted into solid fluorides which also can be used for metal-production and fluorine-recycling. Preliminary results of small scale experiments with different materials are discussed, giving information on specific oxygen-yields and amounts of by-products as functions of temperature. These experiments were performed with an already existing fluorine extraction and collection device at the University of Bonn, normally used for determination of oxygen-isotopic abundances. Optimum conditions, especially concerning energy consumption, are investigated. Extrapolation of the experimental results to large industrial-type plants on the Moon is tried and seems to be promising at first sight. The recycling of the fluorine is, however, crucial for the process. It

  16. Lunar mining of oxygen using fluorine

    NASA Technical Reports Server (NTRS)

    Burt, Donald M.; Tyburczy, James A.; Roberts, Jeffery J.; Balasubramanian, Rajan

    1992-01-01

    Experiments during the first year of the project were directed towards generating elemental fluorine via the electrolysis of anhydrous molten fluorides. Na2SiF6 was dissolved in either molten NaBF4 or a eutectic (minimum-melting) mixture of KF-LiF-NaF and electrolyzed between 450 and 600 C to Si metal at the cathode and F2 gas at the anode. Ar gas was continuously passed through the system and F2 was trapped in a KBr furnace. Various anode and cathode materials were investigated. Despite many experimental difficulties, the capability of the process to produce elemental fluorine was demonstrated.

  17. Antibacterial Fluorinated Silica Colloid Superhydrophobic Surfaces

    PubMed Central

    Privett, Benjamin J.; Youn, Jonghae; Hong, Sung A; Lee, Jiyeon; Han, Junhee

    2011-01-01

    A superhydrophobic xerogel coating synthesized from a mixture of nanostructured fluorinated silica colloids, fluoroalkoxysilane, and a backbone silane is reported. The resulting fluorinated surface was characterized using contact angle goniometry, SEM, and AFM. Quantitative bacterial adhesion studies performed using a parallel plate flow cell demonstrated that the adhesion of Staphylococcus aureus and Pseudomonas aeruginosa were reduced by 2.08 ± 0.25 and 1.76 ± 0.12 log over controls, respectively. This simple superhydrophobic coating synthesis may be applied to any surface regardless of geometry and does not require harsh synthesis or processing conditions, making it an ideal candidate as a biopassivation strategy. PMID:21718023

  18. Oxygen extraction from lunar soil by fluorination

    NASA Technical Reports Server (NTRS)

    Seboldt, W.; Lingner, S.; Hoernes, S.; Grimmeisen, W.

    1991-01-01

    Mining and processing of lunar material could possibly lead to more cost-efficient scenarios for permanent presence of man in space and on the Moon. Production of oxygen for use as propellant seems especially important. Different candidate processes for oxygen-extraction from lunar soil were proposed, of which the reduction of ilmenite by hydrogen was studied most. This process, however, needs the concentration of ilmenite from lunar regolith to a large extent and releases oxygen only with low efficiency. Another possibility - the fluorination method - which works with lunar bulk material as feedstock is discussed. Liberation of oxygen from silicate or oxide materials by fluorination methods has been applied in geoscience since the early sixties. The fact that even at moderate temperatures 98 to 100 percent yields can be attained, suggests that fluorination of lunar regolith could be an effective way of propellant production. Lunar soil contains about 50 percent oxygen by weight which is gained nearly completely through this process as O2 gas. The second-most element Si is liberated as gaseous SiF4. It could be used for production of Si-metal and fluorine-recycling. All other main elements of lunar soil will be converted into solid fluorides which also can be used for metal-production and fluorine-recycling. Preliminary results of small scale experiments with different materials are discussed, giving information on specific oxygen-yields and amounts of by-products as functions of temperature. These experiments were performed with an already existing fluorine extraction and collection device at the University of Bonn, normally used for determination of oxygen-isotopic abundances. Optimum conditions, especially concerning energy consumption, are investigated. Extrapolation of the experimental results to large industrial-type plants on the Moon is tried and seems to be promising at first sight. The recycling of the fluorine is, however, crucial for the process. It

  19. Photoredox Activation of SF6 for Fluorination.

    PubMed

    McTeague, T Andrew; Jamison, Timothy F

    2016-11-21

    We report the first practical use of SF6 as a fluorinating reagent in organic synthesis. Photoredox catalysis enables the in situ conversion of SF6 , an inert gas, into an active fluorinating species by using visible light. Under these conditions, deoxyfluorination of allylic alcohols is effected with high chemoselectivity and is tolerant of a wide range of functional groups. Application of the methodology in a continuous-flow setup achieves comparable yields to those obtained with a batch setup, while providing drastically increased material throughput of valuable allylic fluoride products.

  20. Crystal structure analysis and first principle investigation of F doping in LiFePO4

    NASA Astrophysics Data System (ADS)

    Milović, Miloš; Jugović, Dragana; Cvjetićanin, Nikola; Uskoković, Dragan; Milošević, Aleksandar S.; Popović, Zoran S.; Vukajlović, Filip R.

    2013-11-01

    This work presents the synthesis of F-doped LiFePO4/C composite by the specific modification of the recently suggested synthesis procedure based on an aqueous precipitation of precursor material in molten stearic acid, followed by a high temperature treatment. Besides the lattice parameters and the primitive cell volume reductions, compared to the undoped sample synthesized under the same conditions, the Rietveld refinement also shows that fluorine ions preferably occupy specific oxygen sites. Particularly, the best refinement is accomplished when fluorine ions occupy O(2) sites exclusively. By means of up-to-date electronic structure and total energy calculations this experimental finding is theoretically confirmed. Such fluorine doping also produces closing of the gap in the electronic structure and consequently better conductivity properties of the doped compound. In addition, the morphological and electrochemical performances of the synthesized powder are fully characterized.

  1. Effect of the fluorination technique on the surface-fluorination patterning of double-walled carbon nanotubes

    PubMed Central

    Fedoseeva, Yuliya V; Flahaut, Emmanuel; Rio, Jérémy; Ewels, Christopher P; Koroteev, Victor O; Van Lier, Gregory; Vyalikh, Denis V; Okotrub, Alexander V

    2017-01-01

    Double-walled carbon nanotubes (DWCNTs) are fluorinated using (1) fluorine F2 at 200 °C, (2) gaseous BrF3 at room temperature, and (3) CF4 radio-frequency plasma functionalization. These have been comparatively studied using transmission electron microscopy and infrared, Raman, X-ray photoelectron, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. A formation of covalent C–F bonds and a considerable reduction in the intensity of radial breathing modes from the outer shells of DWCNTs are observed for all samples. Differences in the electronic state of fluorine and the C–F vibrations for three kinds of the fluorinated DWCNTs are attributed to distinct local surroundings of the attached fluorine atoms. Possible fluorine patterns realized through a certain fluorination technique are revealed from comparison of experimental NEXAFS F K-edge spectra with quantum-chemical calculations of various models. It is proposed that fluorination with F2 and BrF3 produces small fully fluorinated areas and short fluorinated chains, respectively, while the treatment with CF4 plasma results in various attached species, including single or paired fluorine atoms and –CF3 groups. The results demonstrate a possibility of different patterning of carbon surfaces through choosing the fluorination method. PMID:28875106

  2. Decarboxylative Fluorination Strategies for Accessing Medicinally-relevant Products

    PubMed Central

    Qiao, Yupu; Zhu, Lingui; Ambler, Brett R.

    2014-01-01

    Fluorinated organic compounds have a long history in medicinal chemistry, and synthetic methods to access target fluorinated compounds are undergoing a revolution. One powerful strategy for the installation of fluorine-containing functional groups includes decarboxylative reactions. Benefits of decarboxylative approaches potentially include: 1) readily available substrates or reagents 2) mild reaction conditions; 3) simplified purification. This focus review highlights the applications of decarboxylation strategies for fluorination reactions to access compounds with biomedical potential. The manuscript highlights on two general strategies, fluorination by decarboxylative reagents and by decarboxylation of substrates. Where relevant, examples of medicinally useful compounds that can be accessed using these strategies are highlighted. PMID:24484421

  3. Electronic structures and transport properties of fluorinated boron nitride nanoribbons.

    PubMed

    Zeng, Jing; Chen, Ke-Qiu; Sun, Chang Q

    2012-06-14

    By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.

  4. Electrochemical fluorination of trichloroethylene and N, N-dimethyltrifluoroacetamide

    NASA Technical Reports Server (NTRS)

    Hsu, L.-C.

    1979-01-01

    The paper presents the results of experiments concerning the fluorination of trichloroethylene and N, N-dimethyltrifluoroacetamide carried out on a laboratory scale in an advanced 'Simons' type electrochemical apparatus which could be operated automatically from ambient to 50 psi pressure. It is shown that a variety of fluorine-substituted products are formed, depending upon electrolysis conditions and concentrations of reactant relative to the NaF, KF, HF electrolyte. A new reaction mechanism of electrochemical fluorination of trichloroethylene is proposed. Finally, the solvency-to-fluorine content relationship of fluorinated N, N-dimethyltrifluoroacetamide is described.

  5. Electrochemical fluorination of trichloroethylene and N, N-dimethyltrifluoroacetamide

    NASA Technical Reports Server (NTRS)

    Hsu, L. C.

    1979-01-01

    Fluorination of trichloroethylene and N, N-dimethyltrifluoroacetamide was carried out on a laboratory scale in an advanced Simons type electrochemical apparatus which could be operated automatically from ambient to 50 psi pressure. A variety of fluorine-substituted products are formed, depending upon electrolysis conditions and concentrations of reactant relative to the NaF, KF, HF electrolyte. A new reaction mechanism of electrochemical fluorination of trichloroethylene is proposed. The solvency-to-fluorine content relationship of fluorinated N, N-dimethyltrifluoroacetamide is described.

  6. Bacterial and fungal biofilm formation on anodized titanium alloys with fluorine.

    PubMed

    Perez-Jorge, Concepcion; Arenas, Maria-Angeles; Conde, Ana; Hernández-Lopez, Juan-Manuel; de Damborenea, Juan-Jose; Fisher, Steve; Hunt, Alessandra M Agostinho; Esteban, Jaime; James, Garth

    2017-01-01

    Orthopaedic device-related infections are closely linked to biofilm formation on the surfaces of these devices. Several modified titanium (Ti-6Al-4V) surfaces doped with fluorine were studied in order to evaluate the influence of these modifications on biofilm formation by Gram-positive and Gram-negative bacteria as well as a yeast. The biofilm studies were performed according to the standard test method approved by ASTM (Designation: E2196-12) using the Rotating Disk Reactor. Four types of Ti-6Al-4V samples were tested; chemically polished (CP), two types of nanostructures containing fluorine, nanoporous (NP) and nanotubular (NT), and non-nanostructured fluorine containing samples (fluoride barrier layers, FBL). Different species of Gram-positive cocci, (Staphylococcus aureus and epidermidis), Gram-negative rods (Escherichia coli, Pseudomonas aeruginosa), and a yeast (Candida albicans) were studied. For one of the Gram-positive (S. epidermidis) and one of the Gram-negative (E. coli) species a statistically-significant decrease in biofilm accumulation for NP and NT samples was found when compared with the biofilm accumulation on CP samples. The results suggest an effect of the modified materials on the biofilm formation.

  7. Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement

    PubMed Central

    Lee, Hock Beng; Ginting, Riski Titian; Tan, Sin Tee; Tan, Chun Hui; Alshanableh, Abdelelah; Oleiwi, Hind Fadhil; Yap, Chi Chin; Jumali, Mohd Hafizuddin Hj.; Yahaya, Muhammad

    2016-01-01

    Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface –OH passivation, (ii) oxygen vacancies (Vo) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device. PMID:27587295

  8. Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement.

    PubMed

    Lee, Hock Beng; Ginting, Riski Titian; Tan, Sin Tee; Tan, Chun Hui; Alshanableh, Abdelelah; Oleiwi, Hind Fadhil; Yap, Chi Chin; Jumali, Mohd Hafizuddin Hj; Yahaya, Muhammad

    2016-09-02

    Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface -OH passivation, (ii) oxygen vacancies (Vo) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.

  9. Bacterial adherence on fluorinated carbon based coatings deposited on polyethylene surfaces

    NASA Astrophysics Data System (ADS)

    Terriza, A.; Del Prado, G.; Ortiz Pérez, A.; Martínez, M. J.; Puértolas, J. A.; Molina Manso, D.; González-Elipe, A. R.; Yubero, F.; Gómez Barrena, E.; Esteban, J.

    2010-11-01

    Development of intrinsically antibacterial surfaces is of key importance in the context of prostheses used in orthopaedic surgery. In this work we present a thorough study of several plasma based coatings that may be used with this functionality: diamond like carbon (DLC), fluorine doped DLC (F-DLC) and a high fluorine content carbon-fluor polymer (CFX). The study correlates the surface chemistry and hydrophobicity of the coating surfaces with their antibacterial performance. The coatings were deposited by RF-plasma assisted deposition at room temperature on ultra high molecular weight polyethylene (UHMWPE) samples. Fluorine content and relative amount of C-C and C-F bond types was monitored by X-ray photoelectron spectroscopy and hydrophobicity by water contact angle measurements. Adherence of Staphylococcus aureus and Staphylococcus epidermidis to non-coated and coated UHMWPE samples was evaluated. Comparisons of the adherence performance were evaluated using a paired t test (two materials) and a Kruskall Wallis test (all the materials). S. aureus was statistically significant (p< 0.001) less adherent to DLC and F -DLC surfaces than S. epidermidis. Both bacteria showed reduction of adherence on DLC/UHMWPE. For S. aureus, reduction of bacterial adherence on F-DLC/UHMWPE was statistically significant respect to all other materials.

  10. Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement

    NASA Astrophysics Data System (ADS)

    Lee, Hock Beng; Ginting, Riski Titian; Tan, Sin Tee; Tan, Chun Hui; Alshanableh, Abdelelah; Oleiwi, Hind Fadhil; Yap, Chi Chin; Jumali, Mohd Hafizuddin Hj.; Yahaya, Muhammad

    2016-09-01

    Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface –OH passivation, (ii) oxygen vacancies (Vo) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.

  11. Kinetics of the fluorination of zinc

    NASA Technical Reports Server (NTRS)

    Odonnell, P. M.

    1975-01-01

    The reaction between zinc metal and fluorine gas can be described by a parabolic rate law. This reaction is both temperature and pressure dependent. Simple kinetics are complicated by the considerable vaporization rate for zinc at temperatures above 300 C (573 K).

  12. The fluorine complexation degree in seawater

    NASA Astrophysics Data System (ADS)

    Savenko, A. V.; Savenko, V. S.

    2011-02-01

    Ionometric measurements of the complexation degree of fluorides in seawater of 5-35‰ salinity at 25°C were carried out using two procedures for the standardization of the measuring electrochemical circuits. It was shown that, if we determine the degree of the fluorine complexation in seawater using the measured values of the total coefficients of the activity, the fraction of free ions is much dependent on the value used of the activity coefficient of the free ions calculated by means of one of the versions of either the second or third approximation of the Debye-Huckel electrostatic theory of strong electrolyte solutions. With the more correct measurement of the fluorine complexation degree in seawater on the basis of the comparison of the EMF values in pure KCl-KF solutions and in mixtures of these solutions and seawater at equal ionic power and fluoride concentrations, a close correlation was revealed for the free ion fraction in three series of experiments at fluorine contents of 0.2, 0.3, and 0.4 mM (the concentration of the fluorine in seawater of 35‰ salinity amounts to 0.421 ± 0.014 mM.)

  13. Fluorinated diamond bonded in fluorocarbon resin

    DOEpatents

    Taylor, Gene W.

    1982-01-01

    By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

  14. Self-lubricating fluorine shaft seal material

    NASA Technical Reports Server (NTRS)

    Munk, W. R.

    1970-01-01

    Lubricating film is produced by a reaction of fluorine with a composite of aluminum oxide and nickel powder. The rate of nickel fluoride generation is proportional to the rate at which the fluoride is rubbed off the surface, allowing the seal to operate with the lowest possible heating.

  15. Light-induced molecular adsorption and reorientation at polyvinylcinnamate-fluorinated/liquid-crystal interface

    SciTech Connect

    Francescangeli, O.; Lucchetti, L.; Simoni, F.; Stanic, V.; Mazzulla, A.

    2005-01-01

    We have carried out a detailed experimental study, by means of x-ray reflectometry (XRR) and half-leaky guided mode (HLGM) optical characterization, of the light-induced molecular adsorption and reorientation at the polyvinylcinnamate-fluorinated (PVCN-F)/liquid-crystal (LC) interface of a LC cell doped with the azo-dye methyl red (MR). The XRR data allowed characterizing the microscopic structure of the adsorbed dye layer both before irradiation (dark adsorption) and after irradiation (light-induced adsorption). The HLGM optical characterization has made possible the experimental determination of the nematic director profile in the LC cell and evaluation of the effects of light-induced adsorption on the LC anchoring conditions. The experimental findings have confirmed the formation of a dark-adsorbed layer and are in agreement with the absorption model previously proposed to account for the complex phenomenology related to light-induced anchoring and reorientation in dye-doped liquid crystals.

  16. Dry-etch resistance of fluorine functionalized polymers

    NASA Astrophysics Data System (ADS)

    Koh, Meiten; Ishikawa, Takuji; Araki, Takayuki; Aoyama, Hirokazu; Yamashita, Tsuneo; Yamazaki, Tamio; Watanabe, Hiroyuki; Toriumi, Minoru; Itani, Toshiro

    2002-07-01

    The reactive ion etch (RIE) properties of fluorine funtionalized polymers in which fluorine atoms were incorporated in the main chain were examined. There was a tendency that the etching rates of these polymers were higher as lower the fluorine contents. The existing four models such as the Ohnishi model, the Kunz model, the Ohfuji model and the Kishimura model were applied to explain the correlation between the etching rates and the polymer compositions or structures, but the errors were too large to explain the relationship. A new model has developed to explain the effect of the fluorine incorporation to the dry etch resistance. The model assumed that there would be a correlation between the number of main chain fluorine atoms and the dry etch resistance, and the main chain fluorine incorporation would increase the dry etch resistance. The model could explain the dry etch resistance of the main chain fluorine incorporated polymers with adequate accuracy.

  17. Fluorine local environment: from screening to drug design.

    PubMed

    Vulpetti, Anna; Dalvit, Claudio

    2012-08-01

    Fluorine is widely used in the lead optimization phase of drug discovery projects. More recently, fluorine NMR-based spectroscopy has emerged as a versatile, reliable and efficient tool for performing binding and biochemical assays. Different libraries of fluorinated compounds, designed by maximizing the chemical space around the fluorine atom, are screened for identifying binding fragments and for detecting putative fluorophilic hot spots on the desired macromolecular target. A statistical analysis of the fluorine NMR chemical shift, which is a marker of the fluorine local environment, and of the X-ray structures of fluorinated molecules has resulted in the development of the 'rule of shielding'. This method could become a useful tool for lead optimization and for designing novel chemical scaffolds that recognize distinct protein structural motifs. Copyright © 2012 Elsevier Ltd. All rights reserved.

  18. Synthesis of Fluorinated Polymers and Evaluation of Wettability.

    PubMed

    Kimura, Tamami; Kasuya, Maria Carmelita; Hatanaka, Kenichi; Matsuoka, Koji

    2016-03-17

    Two kinds of fluorinated polymers were synthesized: an acrylate polymer having a fluorinated triethylene glycol as a pendant group (2a) and a fluoroalkyl acrylate polymer (2b). The contact angle of these fluorinated polymers against water, non-fluorinated alcohols and fluorinated alcohols were evaluated. As compared with the fluoroalkyl polymer (2b), fluoroethylene glycol polymer (2a) showed smaller contact angle against water and non-fluorinated alcohols. This supports the proposition that changing the alkyl chain into the ethylene glycol-type chain gave some interaction between etheric oxygen and water or non-fluorinated alcohols. In addition, fluoroalkyl acrylate polymer (2b) showed remarkably low values of critical surface tension.

  19. Heavily Obscured Star-Forming Regions in the LVL Galaxies

    NASA Astrophysics Data System (ADS)

    Dale, Daniel A.; Aller, K.; Staudaher, S.

    2009-01-01

    We use data from the Spitzer Local Volume Legacy to study the infrared and optical properties of star forming regions in galaxies on 300pc scales. Our main goal is to determine the fraction of heavily-obscured star-forming regions. Here we study 908 regions within 55 galaxies. The median attenuation in Hα is 0.69 mag, and only a small fraction is highly obscured (Aα> 2). There is very little variation in the median attenuation over scales of 200pc to 1000pc.

  20. Study of the low-pressure chemical-vapor-deposited tungsten-silicon interface: Interfacial fluorine

    SciTech Connect

    Carlisle, J.A.; Chopra, D.R.; Dillingham, T.R.; Gnade, B.; Smith, G.

    1989-03-15

    Single-crystal silicon <100> substrates uniformly doped at approx. >12 ..cap omega.. cm with boron were deposited with approx.800 A of low-pressure chemically vapor deposited W in a hot-quartz-walled (Anicon) system at a deposition temperature of 300 /sup 0/C. The samples studied include an as-deposited sample and two others which were post-deposition annealed at 600 /sup 0/C in Ar for 15 min each. X-ray photoelectron spectroscopy (XPS) coupled with an Ar/sup +/ ion sputter profiling technique was employed to investigate these structures as a function of depth. Particular emphasis was placed on the depth distribution, content, and chemical state of the fluorine present. Rutherford backscattering spectrometry and x-ray diffraction were used to corroborate the XPS data. Results show that, for the as-deposited and 600 /sup 0/C annealed sample, the maximum concentration of fluorine (0.6--0.8 at. %) is observed, not at the W/Si interface, but rather at the W (H/sub 2/ reduction)/W (Si displacement) interface. For the sample annealed at 850 /sup 0/C, WSi/sub 2/ is formed in the overlayer, and the peak in the F profile corresponds to the position of the WSi/sub 2//Si interface. The maximum concentration of fluorine is reduced by approximately 75% to 0.23 at. % in this sample. From the XPS spectra of the F 1s region, the chemical species of fluorine present in these samples have been identified as WF/sub 6/, WF/sub 5/, and WF/sub 4/.

  1. Doping dependence of electronic charge transfer on Si(1 0 0)

    NASA Astrophysics Data System (ADS)

    Vaquila, I.; Rabalais, J. W.; Wolfgang, J.; Nordlander, P.

    2001-08-01

    The ion fractions of 4 keV Ne + scattered from intrinsic and heavily n-doped and p-doped Si(1 0 0)-(2×1) surfaces have been measured using time-of-flight scattering and recoiling spectrometry. The ion fractions depend strongly on azimuthal angle, varying from 28-36% for n-doped and 36-44% for p-doped. The pronounced dependency on substrate doping is correlated with surface electronic structure and ion neutralization probability. The observed behavior can be explained by the difference in band bending on intrinsic and n- and p-doped semiconductor surfaces.

  2. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-01

    Epitaxial silicon nanowires (NWs) of short heights (˜280nm) on Si ⟨111⟩ substrate were grown and doped in situ with boron on a concentration range of 1015-1019cm-3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (1015cm-3) and medium doped (3×1016 and 1×1017cm-3) NWs were heavily depleted by the surface states while the high doped (1018 and 1019cm-3) ones showed volume conductivities expected for the corresponding intended doping levels.

  3. Fluorination of epitaxial oxides: Creating ferrite and nickelate oxyfluoride films

    NASA Astrophysics Data System (ADS)

    May, Steven; Moon, Eun; Xie, Yujun; Keavney, David; Goebel, Justin; Laird, Eric; Li, Christopher

    2013-03-01

    In ABO3 perovskites, the physical properties are directly coupled to the nominal valence state of the B-site cation. In epitaxial thin films, the dominant strategy to control B-site valence is through the selection of a di- or trivalent cation on the A-site. However, this approach is limited, particularly when electron doping on the B-site is desired. Here we report a simple method for realizing oxyfluoride films, where the substitution of F for O is expected to reduce the B-site valence, providing a new means to tune electronic, optical and magnetic properties in thin films. Fluorination is achieved by spin coating an oxygen deficient film with poly(vinylidene fluoride). The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO3-δFδ and LaNiO3-δFδ (δ ? 0.5) films, as confirmed by x-ray photoemission spectroscopy and x-ray absorption spectroscopy. This work is supported by the U. S. Army Research Office under grant number W911NF-12-1-0132. Work at the Advanced Photon Source is supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences under contract DE-AC02-06CH11357.

  4. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    SciTech Connect

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-09-08

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste.

  5. Differences between white and black youth who drink heavily.

    PubMed

    Ringwalt, C L; Palmer, J H

    1990-01-01

    This study compares the attitudes and beliefs of white and black adolescents who drink heavily. The study's sample comprises 1,533 youth who responded in 1987 to a survey of 10,259 7th to 12th grade students, and reported that they had gotten drunk at least six times within the previous year. The ratio of blacks to whites decreased with drinking severity. Controlling for age, sex, and living situation, a logistic regression revealed that blacks were significantly more likely than whites to believe that getting drunk would lead to health problems and that alcohol is addicting. Blacks were also more concerned than whites about their parents' disapproval of their drinking alcohol, while whites were more concerned than blacks about their friends' disapproval. The study suggests that programs targeted towards black youth who drink heavily should focus less on enhancing peer refusal skills and more on ensuring that black parents and other adults make explicit their negative attitudes towards alcohol use.

  6. Propriétés électriques des solutions solides à structure fluorine excédentaire en anions Na 0.5- xY 0.5+ xF 2+2 x

    NASA Astrophysics Data System (ADS)

    Pontonnier, L.; Aléonard, S.; Roux, M. T.; Hammou, A.

    1987-07-01

    A study by impedance spectroscopy has been made of the ac conductivity of the Na 0.5- xY 0.5+ xF 2+2 x solid solutions which have a fluorite defect structure stabilized by doping. Although connected with the fluorine motion, the conductivity is almost independent of the anion excess. This behavior is different from that of CaF 2 or from that of βPbF 2 doped with trivalent cations.

  7. Electrolytes including fluorinated solvents for use in electrochemical cells

    DOEpatents

    Tikhonov, Konstantin; Yip, Ka Ki; Lin, Tzu-Yuan

    2015-07-07

    Provided are electrochemical cells and electrolytes used to build such cells. The electrolytes include ion-supplying salts and fluorinated solvents capable of maintaining single phase solutions with the salts at between about -30.degree. C. to about 80.degree. C. The fluorinated solvents, such as fluorinated carbonates, fluorinated esters, and fluorinated esters, are less flammable than their non-fluorinated counterparts and increase safety characteristics of cells containing these solvents. The amount of fluorinated solvents in electrolytes may be between about 30% and 80% by weight not accounting weight of the salts. Fluorinated salts, such as fluoroalkyl-substituted LiPF.sub.6, fluoroalkyl-substituted LiBF.sub.4 salts, linear and cyclic imide salts as well as methide salts including fluorinated alkyl groups, may be used due to their solubility in the fluorinated solvents. In some embodiments, the electrolyte may also include a flame retardant, such as a phosphazene or, more specifically, a cyclic phosphazene and/or one or more ionic liquids.

  8. Biodegradability of fluorinated fire-fighting foams in water.

    PubMed

    Bourgeois, A; Bergendahl, J; Rangwala, A

    2015-07-01

    Fluorinated fire-fighting foams may be released into the environment during fire-fighting activities, raising concerns due to the potential environmental and health impacts for some fluorinated organics. The current study investigated (1) the biodegradability of three fluorinated fire-fighting foams, and (2) the applicability of current standard measures used to assess biodegradability of fluorinated fire-fighting foams. The biodegradability of three fluorinated fire-fighting foams was evaluated using a 28-day dissolved organic carbon (DOC) Die-Away Test. It was found that all three materials, diluted in water, achieved 77-96% biodegradability, meeting the criteria for "ready biodegradability". Defluorination of the fluorinated organics in the foam during biodegradation was measured using ion chromatography. It was found that the fluorine liberated was 1-2 orders of magnitude less than the estimated initial amount, indicating incomplete degradation of fluorinated organics, and incomplete CF bond breakage. Published biodegradability data may utilize biochemical oxygen demand (BOD), chemical oxygen demand (COD), and total organic carbon (TOC) metrics to quantify organics. COD and TOC of four fluorinated compounds were measured and compared to the calculated carbon content or theoretical oxygen demand. It was found that the standard dichromate-based COD test did not provide an accurate measure of fluorinated organic content. Thus published biodegradability data using COD for fluorinated organics quantification must be critically evaluated for validity. The TOC measurements correlated to an average of 91% of carbon content for the four fluorinated test substances, and TOC is recommended for use as an analytical parameter in fluorinated organics biodegradability tests. Copyright © 2015 Elsevier Ltd. All rights reserved.

  9. Fluorinated graphenes as advanced biosensors - effect of fluorine coverage on electron transfer properties and adsorption of biomolecules

    NASA Astrophysics Data System (ADS)

    Urbanová, Veronika; Karlický, František; Matěj, Adam; Šembera, Filip; Janoušek, Zbyněk; Perman, Jason A.; Ranc, Václav; Čépe, Klára; Michl, Josef; Otyepka, Michal; Zbořil, Radek

    2016-06-01

    Graphene derivatives are promising materials for the electrochemical sensing of diverse biomolecules and development of new biosensors owing to their improved electron transfer kinetics compared to pristine graphene. Here, we report complex electrochemical behavior and electrocatalytic performance of variously fluorinated graphene derivatives prepared by reaction of graphene with a nitrogen-fluorine mixture at 2 bars pressure. The fluorine content was simply controlled by varying the reaction time and temperature. The studies revealed that electron transfer kinetics and electrocatalytic activity of CFx strongly depend on the degree of fluorination. The versatility of fluorinated graphene as a biosensor platform was demonstrated by cyclic voltammetry for different biomolecules essential in physiological processes, i.e. NADH, ascorbic acid and dopamine. Importantly, the highest electrochemical performance, even higher than pristine graphene, was obtained for fluorinated graphene with the lowest fluorine content (CF0.084) due to its high conductivity and enhanced adsorption properties combining π-π stacking interaction with graphene regions with hydrogen-bonding interaction with fluorine atoms.Graphene derivatives are promising materials for the electrochemical sensing of diverse biomolecules and development of new biosensors owing to their improved electron transfer kinetics compared to pristine graphene. Here, we report complex electrochemical behavior and electrocatalytic performance of variously fluorinated graphene derivatives prepared by reaction of graphene with a nitrogen-fluorine mixture at 2 bars pressure. The fluorine content was simply controlled by varying the reaction time and temperature. The studies revealed that electron transfer kinetics and electrocatalytic activity of CFx strongly depend on the degree of fluorination. The versatility of fluorinated graphene as a biosensor platform was demonstrated by cyclic voltammetry for different biomolecules

  10. Catalytic control of enzymatic fluorine specificity

    PubMed Central

    Weeks, Amy M.; Chang, Michelle C. Y.

    2012-01-01

    The investigation of unique chemical phenotypes has led to the discovery of enzymes with interesting behaviors that allow us to explore unusual function. The organofluorine-producing microbe Streptomyces cattleya has evolved a fluoroacetyl-CoA thioesterase (FlK) that demonstrates a surprisingly high level of discrimination for a single fluorine substituent on its substrate compared with the cellularly abundant hydrogen analog, acetyl-CoA. In this report, we show that the high selectivity of FlK is achieved through catalysis rather than molecular recognition, where deprotonation at the Cα position to form a putative ketene intermediate only occurs on the fluorinated substrate, thereby accelerating the rate of hydrolysis 104-fold compared with the nonfluorinated congener. These studies provide insight into mechanisms of catalytic selectivity in a native system where the existence of two reaction pathways determines substrate rather than product selection. PMID:23150553

  11. Microbial removal of toxic metals from a heavily polluted soil

    NASA Astrophysics Data System (ADS)

    Nicolova, Marina; Spasova, Irena; Georgiev, Plamen; Groudev, Stoyan

    2015-04-01

    Samples of a leached cinnamonic forest soil heavily polluted with uranium and some toxic heavy metals (mainly copper, zinc and cadmium) were subjected to cleaning by means of bioleaching with acidophilic chemolithotrophic bacteria. The treatment was carried out in a green house in which several plots containing 150 kg of soil each were constructed. The effect of some essential environmental factors such as pH, humidity, temperature and contents of nutrients on the cleaning process was studied. It was found that under optimal conditions the content of pollutants were decreased below the relevant permissible levels within a period of 170 days. The soil cleaned in this way was characterized by a much higher production of biomass of different plants (alfalfa, clover, red fescue, vetch) than the untreated polluted soil.

  12. Tidal changes in a heavily modified coastal wetland

    NASA Astrophysics Data System (ADS)

    Ferrarin, Christian; Tomasin, Alberto; Bajo, Marco; Petrizzo, Antonio; Umgiesser, Georg

    2015-06-01

    Changes in tidal regime in the heavily modified Venice Lagoon, Italy, are investigated using long-term observations and numerical modelling. The amplitudes of the major tidal constituents exhibit a significant increase over the last century. Analysis of tide gauge data in the adjacent Adriatic Sea reveals that these changes could be only partially attributed to the rise of the mean sea level. Numerical experiments confirm that natural and anthropogenic morphological changes are responsible for the alteration of tidal regime inside the lagoon. Temporal and spatial changes in tidal asymmetry highlight the complex impacts of human interventions on tidal changes and long-term morphodynamics. Our results suggest that over time the lagoon became more and more an ebb-dominant system. Moreover, in Venice the tidal modulations are significantly impacting the frequency with which high water level thresholds are exceeded. Occurrence of flooding events is therefore influenced by sea level rise and secondarily by the increase in amplitude of principal tidal waves.

  13. Release behavior of tritium from graphite heavily irradiated by neutrons

    NASA Astrophysics Data System (ADS)

    Saeki, Masakatsu

    1981-07-01

    The release behavior of tritium formed in graphite has been investigated as a function of radiation damage by means of isochronal annealing of samples heavily irradiated by neutrons. The lithium impurities in graphite were estimated as the source of tritium formation. The main chemical form of released tritium was hydrogen accompanied by a small quantity of methane. No other hydrocarbons could be detected. Tritiated water was always measured, but the formation mechanism was experimentally confirmed as the secondary oxidation of released HT molecule. The release spectrum of tritium in isochronal annealing was shifted to a higher heating temperature with the increase of the neutron fluence received by the graphite crystal. A relationship was established between the amount of tritium released up to a certain temperature and the degree of graphitization of the sample.

  14. Fluorinated Polyhedral Oligomeric Silsesquioxanes (FluoroPOSS)

    DTIC Science & Technology

    2004-04-01

    Fluorodecyl(8T8), Contact Angle of Water on Fluorodecyl POSS Surface, Contact Angle of Mercury on Fluorodecyl POSS Surface, AFM Image of Spin-Cast...Fluorodecyl(8T8) Surface, Surface Energy of Fluorosiloxanes, Contact Angle and Chain Length, POSS Polymer Incorporation, Importance of R groups: Affect...compatibility with polymer matrix, PVDF/Fluoroocytl(8T8) POSS,PVDF/Fluoroocytl(nTn) POSS, Fluorinated Ethylene/Propylene, Poly(chlorotrifluoroethylene), Amorphous FEP, Water Contact Angle .

  15. Fluorination of 6-methyluracil and its nlcleosides.

    PubMed Central

    Cech, D; Herrmann, G; Holy, A

    1977-01-01

    6-Methyluracil and its perbenzoylated 1-(beta-D-ribofuranosyl) and 1-(2-deoxy-beta-D-ribofuranosyl) derivatives afford on treatment with elemental fluorine in acetic acid solutions, the corresponding derivatives of 5-fluoro-6-methyluracil and 5-fluoro-6-fluoromethyluracil. The free nucleosides have been obtained from the protected derivatives by methanolysis. The CH2F linkage in 5-fluoro-6-fluoromethyluracil derivatives is stable towards hydrolysis and nucleophilic agents. PMID:909805

  16. Spectrophotometric determination of fluorine in silicate rocks

    USGS Publications Warehouse

    Peck, L.C.; Smith, V.C.

    1964-01-01

    The rock powder is sintered with a sodium carbonate flux containing zinc oxide and magnesium carbonate, the sinter-cake leached with water and the resulting solution filtered. Fluorine is separated from the acidified filtrate by steam distillation and determined spectrophotometrically by means of a zirconium-SPADNS reagent. If a multiple-unit distillation apparatus is used, 12 determinations can be completed per man-day. ?? 1964.

  17. Muon-fluorine entanglement in fluoropolymers.

    PubMed

    Lancaster, T; Pratt, F L; Blundell, S J; McKenzie, I; Assender, H E

    2009-08-26

    We present the results of muon spin relaxation measurements on the fluoropolymers polytetrafluoroethylene (PTFE), poly(vinylidene fluoride) (PVDF) and poly(vinyl fluoride) (PVF). Entanglement between the muon spin and the spins of the fluorine nuclei in the polymers allows us to identify the different muon stopping states that occur in each of these materials and provides a method of probing the local environment of the muon and the dynamics of the polymer chains.

  18. Fluorine in coal and coal by-products

    SciTech Connect

    Robertson, J.D.; Wong, A.S.; Hower, J.C.

    1994-12-31

    Fluorine occurs in awe amounts in most coals. It is typically associated with minerals of the apatite group, principally fluorapatite and clays, and with fluorite, tourmaline, topaz, amphiboles and micas. The average fluorine content of US coal is, according to the tabulation of Swanson, 74 {mu}g/g. In the United States, the lowest average fluorine concentration of 30 {mu}g/g is found in coals from Eastern Kentucky and the highest average value of 160 {mu}g/g is found in coals from Wyoming and New Mexico. The concentration range of fluorine in European coals is similar to that found in the US while the average fluorine content of Australian coals ranges from 15 to 500 {mu}g/g. We have determined the fluorine content in coal and fly ash standards by proton-induced gamma ray emission analysis (PIGE).

  19. UV-laser-assisted liquid phase fluorination of PMMA

    NASA Astrophysics Data System (ADS)

    Wochnowski, C.; Di Ferdinando, M.; Giolli, C.; Vollertsen, F.; Bardi, U.

    2007-10-01

    Polymethylmethacrylate (PMMA) substrate was covered with liquid 1,2,3,5-tetrafluorobenzene by spin coating. Then the sample was irradiated by a KrF-excimer laser ( λ = 248 nm). Thus, fluorine is released from the fluorine-containing precursor diffusing into the polymeric substrate material where it is expected to substitute the hydrogen atoms of the polymeric molecule and form a water-repellent (hydrophobic) fluorinated polymer. After drying out the polymeric substrate, the sample surface was investigated by SEM, EDX, XPS and contact angle measurement method in order to determine the fluorine content and the wettability of the treated polymeric surface as well as the substitution sites inside the polymeric molecule. The measurements indicate some chemically bonded fluorine at the top of the sample layer. A UV-photochemical fluorination mechanism is proposed based on the XPS spectra evaluation.

  20. A Nuclear Reaction Analysis study of fluorine uptake in flint

    SciTech Connect

    Jin, Jian-Yue; Weathers, D. L.; Picton, F.; Hughes, B. F.; Duggan, J. L.; McDaniel, F. D.; Matteson, S.

    1999-06-10

    Nuclear Reaction Analysis (NRA) using the {sup 19}F(p,{alpha}{gamma}){sup 16}O resonance reaction is a powerful method of fluorine depth profiling. We have used this method to study the fluorine uptake phenomenon in mineral flint, which could potentially develop into a method of dating archeological flint artifacts. Flint samples cut with a rock saw were immersed in aqueous fluoride solutions for different times for the uptake study. The results suggest that fluorine uptake is not a simple phenomenon, but rather a combination of several simultaneous processes. Fluorine surface adsorption appears to play an important role in developing the fluorine profiles. The surface adsorption was affected by several parameters such as pH value and fluorine concentration in the solution, among others. The problem of surface charging for the insulator materials during ion bombardment is also reported.

  1. Simple Synthesis of Fluorinated Graphene: Thermal Exfoliation of Fluorographite.

    PubMed

    Jankovský, Ondřej; Mazánek, Vlastimil; Klímová, Kateřina; Sedmidubský, David; Kosina, Jiří; Pumera, Martin; Sofer, Zdeněk

    2016-12-05

    Fluorinated graphene can be prepared directly by thermal exfoliation of fluorographite. The exfoliation was performed in a dynamic nitrogen atmosphere at various temperatures and the exfoliation products were analysed in detail by GC-MS. The structure and properties of all prepared fluorinated graphenes with various contents of fluorine were characterized by a number of analytical techniques. The results show both the dependence of fluorine concentration on exfoliation temperature and the suitability of this method for the synthesis of graphene with controlled concentration of fluorine. The high-temperature exfoliated fluorographite exhibits a high heterogeneous electron transfer rate and excellent catalytic properties towards the oxygen reduction reaction. These synthetic procedures can open a simple way for the synthesis of fluorinated graphene-based devices with tailored properties.

  2. Synthesis of F-18 labeled resazurin by direct electrophilic fluorination.

    PubMed

    Kachur, Alexander V; Arroyo, Alejandro D; Popov, Anatoliy V; Saylor, Sarah J; Delikatny, E James

    2015-10-01

    We present the synthesis and characterization of F18-labeled fluorinated derivatives of resazurin, a probe for cell viability. The compounds were prepared by direct fluorination of resazurin with diluted [F18]-F2 gas under acidic conditions. The fluorination occurs into the ortho-positions to the hydroxyl group producing various mono-, di-, and trifluorinated derivatives. The properties of the fluorinated resazurins are similar to the parent compound with the addition of fluorine leading to decreased pKa values and a bathochromic shift of the absorption maxima. The fluorinated resazurin derivatives can be used as probes for observation of cell viability in various cells, tissues and organs using a combination of positron emission tomography and direct optical imaging of Cerenkov luminescence.

  3. Synthesis of F-18 labeled resazurin by direct electrophilic fluorination

    PubMed Central

    Kachur, Alexander V.; Arroyo, Alejandro D.; Popov, Anatoliy V.; Saylor, Sarah J.; Delikatny, E. James

    2015-01-01

    We present the synthesis and characterization of F18-labeled fluorinated derivatives of resazurin, a probe for cell viability. The compounds were prepared by direct fluorination of resazurin with diluted [F18]-F2 gas under acidic conditions. The fluorination occurs into the ortho-positions to the hydroxyl group producing various mono-, di-, and trifluorinated derivatives. The properties of the fluorinated resazurins are similar to the parent compound with the addition of fluorine leading to decreased pKa values and a bathochromic shift of the absorption maxima. The fluorinated resazurin derivatives can be used as probes for observation of cell viability in various cells, tissues and organs using a combination of positron emission tomography and direct optical imaging of Cerenkov luminescence. PMID:26504251

  4. Fluorine Abundances in the Milky Way Bulge

    NASA Astrophysics Data System (ADS)

    Cunha, Katia; Smith, Verne V.; Gibson, Brad K.

    2008-05-01

    Fluorine (19F) abundances are derived in a sample of six bulge red giants in Baade's window. These giants span a factor of 10 in metallicity, and this is the first study to define the behavior of 19F with metallicity in the bulge. The bulge results show an increase in F/O with increasing oxygen. This trend overlaps what is found in the disk at comparable metallicities, with the most oxygen-rich bulge target extending the disk trend. The increase in F/O in the disk arises from 19F synthesis in both asymptotic giant branch (AGB) stars and metal-rich Wolf-Rayet (WR) stars through stellar winds. The lack of an s-process enhancement in the most fluorine-rich bulge giant in this study suggests that WR stars represented a larger contribution than did AGB stars to 19F production in the bulge, when compared to the disk. If this result for fluorine is combined with the previously published overall decline in the O/Mg abundance ratios in metal-rich bulge stars, it suggests that WR winds played a role in shaping chemical evolution in the bulge. One star in this study exhibits a very low value of F/O while having a large O abundance; this chemical mixture can be understood if this star formed from gas that was enriched by metal-poor core-collapse supernovae, and it may indicate that chemical evolution in the bulge was inhomogeneous.

  5. All fluorine-free lithium battery electrolytes

    NASA Astrophysics Data System (ADS)

    Scheers, Johan; Lim, Du-Hyun; Kim, Jae-Kwang; Paillard, Elie; Henderson, Wesley A.; Johansson, Patrik; Ahn, Jou-Hyeon; Jacobsson, Per

    2014-04-01

    Fluorine-free lithium battery electrolytes have been prepared from lithium salts with nitrile based anions, LiB(CN)4 or LiDCTA, dissolved in PEGDME or PC. After soaked into electrospun PAN membranes the resulting electrolytes were tested for physical and electrochemical properties and compared with reference PAN electrolytes containing LiPF6 or LiTFSI. The fluorine-free electrolytes were successfully cycled in Li/LiFePO4 cells at room temperature with up to 98% Coulombic efficiency. Small and qualitatively different effects were observed with the addition of Al2O3 particles to the PAN membranes, which could be of importance for long-term performance. However, for fluorine-free electrolytes to be truly competitive, the relatively low anodic stability and elevated temperature performance must first of all be improved by a change of solvent - or addition of co-solvents. Further work in this direction is encouraged by the strong influence of the solvent (PC or PEGDME) on the properties of the LiDCTA electrolytes demonstrated in this work.

  6. Tuneable Rheological Properties of Fluorinated Pickering Emulsions

    NASA Astrophysics Data System (ADS)

    Chacon Orellana, Laura Andreina; Riechers, Birte; Caen, Ouriel; Baret, Jean-Christophe

    Pickering emulsions are an appealing approach to stabilize liquid-liquid dispersions without surfactants. Recently, amphiphilic silica nanoparticles have been proposed as an alternative to surfactants for droplet microfluidics applications, where aqueous drops are stabilized in fluorinated oils. This system, proved to be effective in preventing the leakage of resorufin, a model dye that was known to leak in surfactant-stabilized drops. The overall capabilities of droplet-based microfluidics technology is highly dependent on the dynamic properties of droplets, interfaces and emulsions. Therefore, fluorinated pickering emulsions dynamic properties need to be characterized, understood and controlled to be used as a substitute of already broadly studied emulsions for droplet microfluidics applications. In this study, fluorinated pickering emulsions have been found to behave as a Herschel Bulkley fluid, representing a challenge for common microfluidic operations as re-injection and sorting of droplets. We found that this behavior is controlled by the interaction between the interfacial properties of the particle-laden interface and the bulk properties of the two phases

  7. Doping induced structural changes in colloidal semiconductor nanowires.

    PubMed

    Kandel, Krishna Prasad; Pietsch, Ullrich; Li, Zhen; Oztürk, Ozgül Kurtulus

    2013-03-28

    Undoped and Mn(2+)-doped CdSe nanowires (NWs) grown by a solution-liquid-solid (SLS) method using Bi nanocatalysts have been studied by X-ray powder diffraction measurements. Except for heavily doped nanowires no measurable changes in nanowire lattice parameters were observed. The lattice parameter of heavily doped nanowires shrinks by about 0.5% compared with the undoped ones, which corresponds to a doping concentration of 1.6%. For the other samples no change in lattice parameter is measured referring to a doping level much below 1%. Real structural parameters of nanowires were found to vary as a function of doping level, such as the zinc blende to wurtzite ratio, the static Debye-Waller factor, axial strain, and the number of stacking faults. Compared with the undoped nanowires the overall perfection is slightly improved for low doping but deteriorates drastically for higher doping. Our results highlight the importance of controlling the dopant concentration during the preparation of doped nanostructures.

  8. Efficient Fluorinating Agent through Topochemical Fluorination of Co-Fe Layered Double Hydroxides

    SciTech Connect

    Louvain, Nicolas; Peyroux, Jérémy; Dubois, Marc; Simond, Wikenson; Leroux, Fabrice

    2014-02-13

    Mixed-metal inorganic fluoride, Co0.60Fe0.40F3, solid solutions are obtained through topochemical reactions of Co2FeCl(OH)6·2H2O LDH with molecular fluorine, F2, at temperatures as low as 100 °C. This solid solution possesses interesting F-releasing ability, and its efficiency as a solid-state fluorinating agent is demonstrated on a commercial polyethylene film. 19F solid state NMR and contact angle measurements underline the efficient fluorination of this polymer.

  9. New Experimental Challenges in Elemental Fluorine Chemistry; An Emerging Technology

    DTIC Science & Technology

    1991-10-01

    New Experimental Challenges in Elemental Fluorine Chemistry; An Ac- :-a r Emerging Technology T, 4 iepi SliC T ct PRINCIPAL INVESTIGATOR: Richard J...FLUORINE CHEMISTRY; AN EMERGING TECHNOLOGY Grant Number AFOSR-88-0084 December 1, 1987 - November 30, 1990 Presented by Professor Richard J. Lagow...1991 Final Report 1 Dec 87 to 30 Nov 90 AM S. PUMoiO NumaENs New Experimental Challenges in Elemental Fluorine 61102F 2303/B2 Chemistry; An Emerging

  10. Phenomena Simulation for Heavy Doping and Surface Recombination Velocity

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1985-01-01

    The theoretical models now available that characterize heavily doped (highly conducting) regions in silicon are survyed. Analytical and numerical approaches that determine the influence of such regions on the conversion efficiency of solar cells are examined. Although dilutely doped silicon is well characterized except for some disagreement about optical absorption coefficients, what exists now for heavily doped silicon and its interplay with adjoining regions is an incomplete theory in which not all contributers to transport, recombination, generation, and trapping are defined. Further, the parameters relating to these mechanisms and their values as determined by experiment are subject to various interpretations. The characterization of heavily doped silicon is treated not as a theory but rather as an imperfectly articulated and incompletely formalized body of experience. This view is intended to help point the way toward the attainment of a more complete of heavily doped silicon and thereby toward more informed designs of solar cells. Because computer programs constitute tools both for design and for estimating performance limits, the review includes some remarks pertinent to existing and developing programs.

  11. Fluorine-proton correlation from isolated trifluoromethyl groups using unresolved J-couplings.

    PubMed

    Howe, Peter W A

    2012-10-01

    Fluorine-containing compounds are rare in biological systems, so fluorine NMR spectroscopy can selectively detect and quantify fluorinated xenobiotics in crude biological extracts. The high sensitivity of fluorine NMR allows the detection of compounds containing isolated trifluoromethyl groups at nanogramme levels. However, it only provides limited structural information about trifluoromethyl-containing compounds owing to the difficulty of interpreting fluorine chemical shifts and the low sensitivity of HOESY experiments used to correlate fluorine nuclei with protons in the same compound. This paper demonstrates that long-range fluorine-proton J-couplings can be used to correlate isolated trifluoromethyl groups with nearby protons with significantly higher sensitivity than HOESY. Fluorine-observe fluorine-proton HMQC can even give correlations when the fluorine-proton J-couplings are less than the observed fluorine resonance linewidth, so it provides a useful alternative source of structural information about fluorinated xenobiotics.

  12. Comparison of topotactic fluorination methods for complex oxide films

    SciTech Connect

    Moon, E. J. Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J.; Barbash, D.

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  13. Enhanced Structural Organization in Covalent Organic Frameworks Through Fluorination.

    PubMed

    Alahakoon, Sampath B; McCandless, Gregory T; Karunathilake, Arosha A K; Thompson, Christina M; Smaldone, Ronald A

    2017-01-30

    Here, we report a structure-function study of imine covalent organic frameworks (COFs) comparing a series of novel fluorine-containing monomers to their non-fluorinated analogues. We found that the fluorine-containing monomers produced 2D-COFs with not only greatly improved surface areas (over 2000 m(2)  g(-1) compared to 760 m(2)  g(-1) for the non-fluorinated analogue), but also with improved crystallinity and larger, more defined pore diameters. We then studied the formation of these COFs under varying reaction times and temperatures to obtain a greater insight into their mechanism of formation.

  14. Analysis of fluorine addition to the vanguard first stage

    NASA Technical Reports Server (NTRS)

    Tomazic, William A; Schmidt, Harold W; Tischler, Adelbert O

    1957-01-01

    The effect of adding fluorine to the Vanguard first-stage oxidant was anlyzed. An increase in specific impulse of 5.74 percent may be obtained with 30 percent fluorine. This increase, coupled with increased mass ratio due to greater oxidant density, gave up to 24.6-percent increase in first-stage burnout energy with 30 percent fluorine added. However, a change in tank configuration is required to accommodate the higher oxidant-fuel ratio necessary for peak specific impulse with fluorine addition.

  15. Enantioselective Organocatalytic α-Fluorination of Cyclic Ketones

    PubMed Central

    Kwiatkowski, Piotr; Beeson, Teresa D.; Conrad, Jay C.

    2011-01-01

    The first highly enantioselective α-fluorination of ketones using organocatalysis has been accomplished. The long-standing problem of enantioselective ketone α-fluorination via enamine activation has been overcome via high-throughput evaluation of a new library of amine catalysts. The optimal system, a primary amine functionalized Cinchona alkaloid, allows the direct and asymmetric α-fluorination of a variety of carbo- and heterocyclic substrates. Furthermore, this protocol also provides diastereo-, regio- and chemoselective catalyst control in fluorinations involving complex carbonyl systems. PMID:21247133

  16. Flow microreactor synthesis in organo-fluorine chemistry

    PubMed Central

    Nagaki, Aiichiro

    2013-01-01

    Summary Organo-fluorine compounds are the substances of considerable interest in various industrial fields due to their unique physical and chemical properties. Despite increased demand in wide fields of science, synthesis of fluoro-organic compounds is still often faced with problems such as the difficulties in handling of fluorinating reagents and in controlling of chemical reactions. Recently, flow microreactor synthesis has emerged as a new methodology for producing chemical substances with high efficiency. This review outlines the successful examples of synthesis and reactions of fluorine-containing molecules by the use of flow microreactor systems to overcome long-standing problems in fluorine chemistry. PMID:24367443

  17. Two-Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications.

    PubMed

    Feng, Wei; Long, Peng; Feng, Yiyu; Li, Yu

    2016-07-01

    Fluorinated graphene, an up-rising member of the graphene family, combines a two-dimensional layer-structure, a wide bandgap, and high stability and attracts significant attention because of its unique nanostructure and carbon-fluorine bonds. Here, we give an extensive review of recent progress on synthetic methods and C-F bonding; additionally, we present the optical, electrical and electronic properties of fluorinated graphene and its electrochemical/biological applications. Fluorinated graphene exhibits various types of C-F bonds (covalent, semi-ionic, and ionic bonds), tunable F/C ratios, and different configurations controlled by synthetic methods including direct fluorination and exfoliation methods. The relationship between the types/amounts of C-F bonds and specific properties, such as opened bandgap, high thermal and chemical stability, dispersibility, semiconducting/insulating nature, magnetic, self-lubricating and mechanical properties and thermal conductivity, is discussed comprehensively. By optimizing the C-F bonding character and F/C ratios, fluorinated graphene can be utilized for energy conversion and storage devices, bioapplications, electrochemical sensors and amphiphobicity. Based on current progress, we propose potential problems of fluorinated graphene as well as the future challenge on the synthetic methods and C-F bonding character. This review will provide guidance for controlling C-F bonds, developing fluorine-related effects and promoting the application of fluorinated graphene.

  18. Photoreactivity of. cap alpha. -fluorinated phenyl alkyl ketones

    SciTech Connect

    Wagner, P.J.; Thomas, M.J.; Puchalski, A.E.

    1986-11-26

    The photoreactivities of the mono-, di-, and tri-..cap alpha..-fluorinated acetophenones have been compared to that of acetophenone itself. All four ketones have similar triplet excitation energies; the three fluorinated ketones have reduction potentials 0.5-0.7 eV lower than that of acetophenone. Triplet reactivity toward alkylbenzenes keeps increasing with fluorine substitution, since the rate-determining step becomes charge-transfer complexation as the ketone reduction potential decreases. The primary/tertiary C-H selectivity toward p-cymene increases with the number of fluorines. Triplet reactivity toward cyclopentane also is increased by fluorination but peaks at two fluorines, since the lowest triplet switches from n,..pi..* to ..pi..,..pi..* with two or three fluorines and ..pi..,..pi..* triplets are unreactive in simple hydrogen atom abstraction. In contrast, ..cap alpha..-fluorination of valerophenone does not significantly increase the rate of triplet ..gamma..-hydrogen abstraction. The inductive effect on reactivity apparently is offset by a conformational effect. The ..cap alpha..-fluorinated phenones give predominantly cyclobutanols instead of Norrish type II elimination. ..cap alpha..-Fluoroacetophenone forms predominantly acetophenone and HF when irradiated with 2-propanol, in what appears to be a short chain process involving electron transfer to ketone followed by fluoride ion loss. Finally, the radical coupling products in these reactions are formed in varying yields, depending on solvent and additives.

  19. Comparison of the tribological properties of fluorinated cokes and graphites

    NASA Technical Reports Server (NTRS)

    Fusaro, Robert L.

    1988-01-01

    The friction, wear, endurance life, and surface morphology of rubbed (burnished) fluorinated graphite and fluorinated coke materials were studied. Two different coke powders, a graphitic carbon powder, and a graphite powder were fluorinated and then tribologically investigated. In addition, one of the coke powders was reduced in size before fluorinating to evaluate the effect of a finer particle size on the tribological properties. For comparison, graphite and coke powders which were not fluorinated were also tribologically evaluated. Elemental analysis by emission spectroscopy was performed on each sample to determine the impurity content and X-ray diffraction analysis was performed to determine the crystallinity. Coke was found to have very little lubricating ability, but fluorinated coke did possess good lubricating properties. However, the fluorinated graphite and fluorinated graphitic carbon (which gave equivalent results) gave superior results to those obtained with the fluorinated cokes. No tribological benefit was found for using small versus a larger particle size of coke, at least when evaluated as a rubbed film.

  20. Comparison of the tribological properties of fluorinated cokes and graphites

    NASA Technical Reports Server (NTRS)

    Fusaro, Robert L.

    1987-01-01

    The friction, wear, endurance life, and surface morphology of rubbed (burnished) fluorinated graphite and fluorinated coke materials were studied. Two different coke powders, a graphitic carbon powder, and a graphite powder were fluorinated and then tribologically investigated. In addition, one of the coke powders was reduced in size before fluorinating to evaluate the effect of a finer particle size on the tribological properties. For comparison, graphite and coke powders which were not fluorinated were also tribologically evaluated. Elemental analysis by emission spectroscopy was performed on each sample to determine the impurity content and X-ray diffraction analysis was performed to determine the crystallinity. Coke was found to have very little lubricating ability, but fluorinated coke did possess good lubricating properties. However, the fluorinated graphite and fluorinated graphitic carbon (which gave equivalent results) gave superior results to those obtained with the fluorinated cokes. No tribological benefit was found for using small versus a larger particle size of coke, at least when evaluated as a rubbed film.