Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

PubMed Central

Pal, Shovon; Nong, Hanond; Markmann, Sergej; Kukharchyk, Nadezhda; Valentin, Sascha R.; Scholz, Sven; Ludwig, Arne; Bock, Claudia; Kunze, Ulrich; Wieck, Andreas D.; Jukam, Nathan

2015-01-01

The interaction between intersubband resonances (ISRs) and metamaterial microcavities constitutes a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gate. The asymmetric potential in the HEMT structure enables ultrawide electrical tuning of ISR, which is an order of magnitude higher as compared to an equivalent square well. For a single heterojunction with a triangular confinement, we achieve an avoided splitting of 0.52 THz, which is a significant fraction of the bare intersubband resonance at 2 THz. PMID:26578287

DC Characteristics of InAs/AlSb HEMTs at Cryogenic Temperatures

DTIC Science & Technology

2009-05-01

Molecular Beam Epitaxy - MBE XIV, April 2007, Volumes 301- 302, Pages 1025-1029 Fig. 5: SEM image showing the 2x50μm InAs/AlSb HEMT . 325 ...started with a heterostructure grown by molecular beam epitaxy on a semi- insulating InP substrate. The heterostructure is shown in Fig. 1. Mesa isolation...DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures G. Moschetti, P-Å Nilsson, N. Wadefalk, M. Malmkvist, E. Lefebvre, J. Grahn

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

DTIC Science & Technology

2008-07-01

Laboratory are presented. 2. InAlSb/InAs HEMTs The HEMT material was grown by solid-source molecu- lar beam epitaxy (MBE) on a semi-insulating (100) GaAs...and S.Y. Lin, “Strained quantum well modulation-doped InGaSb/AlGaSb struc- tures grown by molecular beam epitaxy ,” J. Electron. Mater., vol.22, no.3...where he majored in solid state physics and researched growth by molecular - beam epitaxy (MBE) of certain compound semiconductor ma- terials. Since

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

2016-01-01

This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

DTIC Science & Technology

2012-01-01

this paper were grown by solid- source molecular beam epitaxy (MBE). Here, the use of a lower- case letter (p) for the narrow bandgap layer and upper...electron and hole mobilities. High electron mobil- ity transistors ( HEMTs ) fabricated from these materials have shown good operating characteristics [1,2...Furthermore, the first monolithic microwave integrated circuits (MMICs) fabricated using 6.1 Å based HEMTs have been demonstrated [3]. New mate- rials

Fabrication and characterization of heterojunction transistors

NASA Astrophysics Data System (ADS)

Lo, Chien-Fong

2011-12-01

Submircon emitter finger high-speed double heterojunction InAlAs/InGaAsSb/InGaAs bipolar transistors (DHBTs) and a variety of nitride high electron mobility transistors (HEMTs) including AlGaN/GaN, InAlN/GaN, and AlN/GaN were fabricated and characterized. DHBT structures were grown by solid source molecular beam epitaxy (SSMBE) on Fe-doped semiinsulating InP substrates and nitride HEMTs were grown with a metal organic chemical vapor deposition (MOCVD) system on sapphire or SiC substrates. AlN/GaN HEMTs were grown with a RF-VMBE on sapphire substrates. Ultra low base contact resistance of 3.7 x 10-7 ohm-cm2 after 1 min 250¢XC thermal treatment on noval InGaAsSb base of DHBTs was achieved and a long-term thermal stability of base metallization was studied. Regarding small scale DHBT fabrication, tri-layer system was introduced to improve the resolution for submicron emitter patterning and help to pile up a thicker emitter metal stack; guard-ring technique was applied around the emitter periphery in order to preserve the current gain at small emitter dimensions. Ultra low turn-on voltage and high current gain can be realized with InGaAsSb-base DHBTs as compared to the conventional InGaAs-base DHBTs. A peak current gain cutoff frequency (fT) of 268 GHz and power gain cutoff frequency (fmax) of 485 GHz were achieved. GaN-based HEMTs herein were fabricated with gate lengths from 400 nm to 1im, and were deposited Ti/Al/Ni/Au as their Ohmic contact metallization. Effects of the Ohmic contact annealing for lattice-matched InAlN/GaN HEMTs with and without a thin GaN cap layer were exhibited and their optimal annealing temperature were obtained. A maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm were demonstrated for InAlN/GaN HEMTs with the shortest gate length. A unity-gain cutoff frequency (fT) of 69 GHz and a maximum frequency of oscillation (fmax) of 80 GHz for InAlN/GaN HEMTs were extracted from measured scattering parameters. Passivation is one of the most important parts in device processing for preventing degradation from various environmental conditions and promising a better device performance. Simply, ozone treatment of AlN on AlN/GaN heterostructures produced effective aluminum oxide surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. Metal oxide semiconductor diode-like gate current-voltage characteristics and minimal drain current degradation during gate pulse measurements were observed. With an additional oxygen plasma treatment on the gate area prior to the gate metal deposition, enhancement-mode AlN/GaN HEMTs were realized. In addition, for AlGaN/GaN HEMTs in high electrical field applications, a high-dielectric-strength SiNx passivation over an optimum thickness was needed to suppress surface flashover during a high voltage or high power operation. An excellent isolation blocking voltage of 900 V with a leakage current at 1 muA/mm was obtained across a nitrogen-implanted isolation-gap of 10 mum between two Ohmic pads. The radiation hardness of HBTs and HEMTs is one of the critical factors that need to be established for military, space, and nuclear industry applications. The effects of proton radiation on the dc performance of InAlAs/InGaAsSb/InGaAs HBTs and AlN/GaN HEMTs were investigated. Both of these devices showed a remarkable resistance to high energy protoninduced degradation and appeared very promising for terrestrial or space-borne applications. The proton-irradiated devices with a dose of 2 x 1011 cm-2 (estimated to be equivalent to more than 40 years of exposure in low-earth orbit) showed only small changes in dc transfer characteristics, threshold voltage shift, and gate-lag with a high frequency pulse on the gate of the HEMTs and showed small changes in junction ideality factor, generation recombination leakage current, and output conductance for the HBTs. The effect the gate metallization on the nitride HEMT reliability was also examined. By replacing the conventional Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN HEMTs during off-state biasing stress was significantly improved from -55 V to over larger than -100 V. Besides the irradiation or high voltage stresses, the effects of ambient on the Pt-gated HEMT sensor for gas sensing application were also explored. For the hydrogen sensing, the sensitivity decreased proportional to the relative humidity but the presence of humidity dramatically improved the sensor recovery characteristics after exposure to the hydrogen ambient.

Quantitative investigation into the source of current slump in AlGaN/GaN HEMT on both Si (111) and sapphire: Self-heating and trapping

NASA Astrophysics Data System (ADS)

Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Das, Palash; Chakraborty, Apurba; Dinara, Syed M.; Kabi, Sanjib; Biswas, Dhurbes

2015-05-01

We have experimentally studied trapping and self-heating effect in terms of current slump in AlGaN/GaN HEMT grown and identically processed on Silicon (111) and Sapphire (0001) substrates. Different responses have been observed through DC characterization of different duty cycle (100%, 50%, 5% and 0.5%) of pulses at drain end. Effect of self-heating is more in case of HEMT on Sapphire due to its comparative poor thermal conductivity whereas trapped charges have strong contribution in current drop of HEMT on Si (111) due to larger lattice as well as thermal expansion coefficient mismatched epitaxy between GaN and Si (111). These results have been compared among substrates that lead us to find out optimal source of current slump quantitatively between traps and self-heating.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

Polar semiconductor heterojunction structure energy band diagram considerations

NASA Astrophysics Data System (ADS)

Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong

2016-03-01

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Evidence from EELS of oxygen in the nucleation layer of a MBE grown III-N HEMT[Electron Energy Loss Spectroscopy, Molecular Beam Epitaxy, High Electron Mobility Transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eustis, T.J.; Silcox, J.; Murphy, M.J.

The presence of oxygen throughout the nominally AlN nucleation layer of a RF assisted MBE grown III-N HEMT was revealed upon examination by Electron Energy Loss Spectroscopy (EELS) in a Scanning Transmission Electron Microscope (STEM). The nucleation layer generates the correct polarity (gallium face) required for producing a piezoelectric induced high mobility two dimensional electron gas at the AlGaN/GaN heterojunction. Only AlN or AlGaN nucleation layers have provided gallium face polarity in RF assisted MBE grown III-N's on sapphire. The sample was grown at Cornell University in a Varian GenII MBE using an EPI Uni-Bulb nitrogen plasma source. The nucleationmore » layer was examined in the Cornell University STEM using Annular Dark Field (ADF) imaging and Parallel Electron Energy Loss Spectroscopy (PEELS). Bright Field TEM reveals a relatively crystallographically sharp interface, while the PEELS reveal a chemically diffuse interface. PEELS of the nitrogen and oxygen K-edges at approximately 5-Angstrom steps across the GaN/AlN/sapphire interfaces reveals the presence of oxygen in the AlN nucleation layer. The gradient suggests that the oxygen has diffused into the nucleation region from the sapphire substrate forming this oxygen containing AlN layer. Based on energy loss near edge structure (ELNES), oxygen is in octahedral interstitial sites in the AlN and Al is both tetrahedrally and octahedrally coordinated in the oxygen rich region of the AlN.« less

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} as potential gate dielectrics for GaN/Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Partida-Manzanera, T., E-mail: sgtparti@liv.ac.uk; Institute of Materials Research and Engineering, A*STAR; Roberts, J. W.

2016-01-14

This paper describes a method to optimally combine wide band gap Al{sub 2}O{sub 3} with high dielectric constant (high-κ) Ta{sub 2}O{sub 5} for gate dielectric applications. (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta{sub 2}O{sub 5} molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al{sub 2}O{sub 3} to 4.6 eV for pure Ta{sub 2}O{sub 5}. The dielectric constant calculated from capacitance-voltage measurementsmore » also increases linearly from 7.8 for Al{sub 2}O{sub 3} up to 25.6 for Ta{sub 2}O{sub 5}. The effect of post-deposition annealing in N{sub 2} at 600 °C on the interfacial properties of undoped Al{sub 2}O{sub 3} and Ta-doped (Ta{sub 2}O{sub 5}){sub 0.12}(Al{sub 2}O{sub 3}){sub 0.88} films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al{sub 2}O{sub 3}/GaN-HEMT and (Ta{sub 2}O{sub 5}){sub 0.16}(Al{sub 2}O{sub 3}){sub 0.84}/GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al{sub 2}O{sub 3} can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.« less

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

PubMed

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

PubMed Central

Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

2016-01-01

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates. PMID:27869222

InAs-based Hterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Polarization engineered enhancement mode GaN HEMT: Design and investigation

NASA Astrophysics Data System (ADS)

Verma, Sumit; Loan, Sajad A.; Alharbi, Abdullah G.

2018-07-01

In this paper, we propose and perform the experimentally calibrated simulation of a novel structure of a GaN/AlGaN high electron mobility transistor (HEMT). The novelty of the structure is the realization of enhancement mode operation by employing polarization engineering approach. In the proposed polarization engineered HEMT (PE-HEMT) a buried Aluminum Nitride (AlN) box is employed in the GaN layer just below the gate. The AlN box creates a two-dimensional hole gas (2DHG) at the GaN/AlN interface, which creates a conduction band barrier in the path of the already existing two-dimensional electron gas (2DEG) at GaN/AlGaN. Therefore, there is no direct path between the source and drain regions at zero gate voltage due to the barrier created by AIN and the device is initially OFF, an enhancement mode operation. A two dimensional (2D) calibrated simulation study of proposed PE-HEMT shows that the device has a threshold voltage (Vth) of 2.3 V. The PE-HEMT also reduces the electron spillover and thus improves the breakdown voltage by 108% as compared to conventional HEMT. The thermal analysis of the GaN PE-HEMT shows that a hot zone occurs on the drain side gate edge. It has been observed that the drain current in the PE-HEMT structure can be improved by 157% by using AlN heat sink.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

DTIC Science & Technology

2016-10-01

Challenges .............................................. 6 2.4. Gamma Ray Irradiation of AlInN/GaN & AlGaN/GaN HEMT Structures...8 2.4.1. Characterization of Irradiated AlInN/GaN and AlGaN/GaN HEMT Heterostructures .................... 8 2.4.2. APT of Baseline Un... Irradiated Lattice Matched AlInN/GaN HEMT Heterostructures ................... 9 2.4.3. APT of Gamma- Irradiated Lattice Matched AlInN/GaN HEMT

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

DTIC Science & Technology

2010-01-01

Heterostructure epitaxial material growth was performed by RF plasma-assisted molecular - beam epitaxy (MBE) on a 2-in. semi- insulating 4H SiC wafer. From... beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs . J Cryst Growth 2003;251:481–6. [25] Storm DF, Katzer DS, Binari SC, Glaser ER...Shanabrook BV, Roussos JA. Reduction of buffer layer conduction near plasma-assisted molecular - beam epitaxy grown GaN/AlN interfaces by beryllium

Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

NASA Astrophysics Data System (ADS)

García, S.; Íñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Pérez, S.

2016-06-01

In this paper, we present results from the simulations of a submicrometer AlGaN/GaN high-electron-mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo simulator. We study the temperature distribution and the influence of heating on the transfer characteristics and the transconductance when the device is grown on different substrates (sapphire, silicon, silicon carbide and diamond). The effect of the inclusion of a thermal boundary resistance (TBR) is also investigated. It is found that, as expected, HEMTs fabricated on substrates with high thermal conductivities (diamond) exhibit lower temperatures, but the difference between hot-spot and average temperatures is higher. In addition, devices fabricated on substrates with higher thermal conductivities are more sensitive to the value of the TBR because the temperature discontinuity is greater in the TBR layer.

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

PubMed

Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

2017-12-01

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications

DTIC Science & Technology

2009-05-01

shown in Fig. 1 was grown by molecular - beam epitaxy (MBE) on 3-inch semi-insulating GaAs substrates. AlGaSb was used as a buffer. AlSb was used as... beam epitaxy for low-power applications,” J. Vac. Sci. Technol. B. 24, pp. 2581-2585, 2006. [12] Y. C. Chou, L. J. Lee, J. M. Yang, M. D. Lange, P...passivation AlGaSb buffer Figure 1: Cross section of an AlSb/InAs HEMT device on a 3-inch GaAs substrate. The interface region between the

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.

2016-09-15

The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase.more » In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.« less

Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

NASA Astrophysics Data System (ADS)

Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

2018-06-01

Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

RF Properties of Epitaxial Lift-Off HEMT Devices

NASA Technical Reports Server (NTRS)

Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.

2015-08-24

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{supmore » +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.« less

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

NASA Astrophysics Data System (ADS)

Gkanatsiou, A.; Lioutas, Ch. B.; Frangis, N.; Polychroniadis, E. K.; Prystawko, P.; Leszczynski, M.

2017-03-01

AlGaN/GaN buffer heterostructures were grown on "on axis" and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved after full AlN layer growth. Step-graded AlGaN layers were introduced, in order to prevent the stress relaxation and to work as a dislocation filter. Thus, a crack-free smooth surface of the final GaN epitaxial layer is achieved in both cases, making the buffer structure ideal for the forthcoming growth of the heterostructure (used for HEMT device applications). Finally, the growth of the AlGaN/GaN heterostructure on top presents characteristic and periodic undulations (V-pits) on the surface, due to strain relaxation reasons. The AlN interlayer grown in between the heterostructure demonstrates an almost homogeneous thickness, probably reinforcing the 2DEG electrical characteristics.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures

NASA Astrophysics Data System (ADS)

Protasov, D. Yu.; Gulyaev, D. V.; Bakarov, A. K.; Toropov, A. I.; Erofeev, E. V.; Zhuravlev, K. S.

2018-03-01

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor-acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8-0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2-1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Emerging GaN-based HEMTs for mechanical sensing within harsh environments

NASA Astrophysics Data System (ADS)

Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

2014-06-01

Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Pei, Yi; Palacios, Tomás; Shen, Likun; Chakraborty, Arpan; McCarthy, Lee S.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

2007-12-01

Nonalloyed Ohmic contacts on Ga-face n+-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16Ωmm and specific contact resistivity of 5.5×10-7Ωcm2 were achieved without contact annealing on the inverted HEMT structure.

Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shao, Lei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab; Pipe, Kevin P.

2011-12-01

Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under certain bias conditions through dynamic screening of the HEMTs vertical field by modulation of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In addition to characterizing SAW emission during both gate-source and drain-source modulation, we demonstrate SAW detection by HEMTs. Integrated HEMT-IDT structures could enable real-time evaluation of epitaxial degradation as well as high-speed, amplified detection of SAWs.

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

2017-01-01

The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/V<1). The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1) and metal rich growth regime (III/V≥1), respectively. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs

NASA Astrophysics Data System (ADS)

Greiling, Paul

1997-05-01

Microwave and millimeterwave devices grown by MBE have significantly advanced the state of the art for RF device performance with respect to noise figure, power output, power added efficiency and extended the clock frequency of digital circuits into the millimeterwave regime. Ober the last 10-15 years, military systems have greatly benefited from the superior performance of MBE grown devices. In order to have a similar impact on the commercial marketplace, MBE growers will have to focus their efforts on a different set of performance criteria; i.e. cost, uniformity and reproducibility. This paper discusses outstanding performance achieved by MBE grown devices and outlines the criteria for commercial applications.

Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Bonsall, Jeremy; Lingley, Zachary; Brodie, Miles; Mason, Maribeth

2017-02-01

High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are finding an increasing number of commercial and military applications that require high voltage, high power, and high efficiency operation. In recent years, leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability, but long-term reliability in the space environment still remains a major concern due to a large number of defects and traps present both in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. Furthermore, degradation mechanisms in GaN HEMTs are still not well understood. Thus, reliability and radiation effects of GaN HEMTs should be studied before solid state power amplifiers (SSPAs) based on GaN HEMT technology are successfully deployed in space satellite systems. For the present study, we investigated electrical characteristics of high-power GaN HEMTs irradiated with protons and heavy ions under various irradiation and biasing conditions.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

NASA Astrophysics Data System (ADS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

2017-02-01

This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Gateless AlGaN/GaN HEMT response to block co-polymers

NASA Astrophysics Data System (ADS)

Kang, B. S.; Louche, G.; Duran, R. S.; Gnanou, Y.; Pearton, S. J.; Ren, F.

2004-05-01

Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

NASA Astrophysics Data System (ADS)

Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

2017-07-01

We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field. Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767).

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2007-12-01

ZnO nanorod-gated AlGaN /GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN /GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

2016-12-01

This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

Electrical properties of AlGaN/GaN HEMTs in stretchable geometries

NASA Astrophysics Data System (ADS)

Tompkins, R. P.; Mahaboob, I.; Shahedipour-Sandvik, F.; Lazarus, N.

2017-10-01

Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics. One common method for fabricating a highly brittle semiconductor device able to survive tens of percent strain is to incorporate stress relief structures ('waves'). Although the mechanical advantages of this approach are well known, the effects on the electrical behavior of a device such as a transistor compared to a more traditional geometry have not been studied. Here, AlGaN/GaN high electron mobility transistors (HEMTs) grown on rigid sapphire substrates were fabricated in a common wavy geometry, a sinusoid, with dimensions similar to those used in stretchable electronics. The study analyzes control parameters available to the designer including gate location along the sinusoid, angle the source-drain contacts make with the gate, as well as variation of the gate length at the peak of the sinusoid. Common electrical parameters such as saturation current density, threshold voltage, and transconductance were compared between the sinusoidal and conventional straight geometries and results found to fall to within experimental uncertainty, suggesting shifting to a stretchable geometry is possible without appreciably degrading semiconductor device performance.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

NASA Astrophysics Data System (ADS)

Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

2016-08-01

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.

2016-08-08

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology

NASA Astrophysics Data System (ADS)

Zhang, Kai; Kong, Cen; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng

2017-02-01

The paper reports high-performance enhancement-mode MOS high-electron mobility transistors (MOS-HEMTs) based on a quaternary InAlGaN barrier. Self-aligned gate technology is used for gate recessing, dielectric deposition, and gate electrode formation. An improved digital recessing process is developed, and an Al2O3 gate dielectric grown with O2 plasma is used. Compared to results with AlGaN barrier, the fabricated E-mode MOS-HEMT with InAlGaN barrier delivers a record output current density of 1.7 A/mm with a threshold voltage (V TH) of 1.5 V, and a small on-resistance (R on) of 2.0 Ω·mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

NASA Astrophysics Data System (ADS)

Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

2017-11-01

Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

NASA Astrophysics Data System (ADS)

Mehandru, R.; Luo, B.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2003-04-01

We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, IDS, reaches a value of over 0.8 A/mm and is ˜40% higher on Sc2O3/AlGaN/GaN transistors relative to conventional HEMTs fabricated on the same wafer. The metal-oxide-semiconductor HEMTs (MOS-HEMTs) threshold voltage is in good agreement with the theoretical value, indicating that Sc2O3 retains a low surface state density on the AlGaN/GaN structures and effectively eliminates the collapse in drain current seen in unpassivated devices. The MOS-HEMTs can be modulated to +6 V of gate voltage. In particular, Sc2O3 is a very promising candidate as a gate dielectric and surface passivant because it is more stable on GaN than is MgO.

Freely Suspended Two-Dimensional Electron Gases.

NASA Astrophysics Data System (ADS)

Blick, Robert; Monzon, Franklin; Roukes, Michael; Wegscheider, Werner; Stern, Frank

1998-03-01

We present a new technique that has allowed us to build the first freely suspended two-dimensional electron gas devices from AlGaAs/GaAs/AlAs heterostructures. This technique is based upon specially MBE grown structures that include a sacrificial layer. In order to design the MBE layer sequence, the conduction band lineup for these samples was modelled numerically. The overall focus of this work is to provide a new approach for studies of the quantum mechanical properties of nanomachined structures. Our current experiments are directed toward use of these techniques for research on very high frequency nanomechanical resonators. The high mobility 2DEG system provides a unique approach to realizing wideband, extremely sensitive displacement detection, using the piezoelectric properties of GaAs to modulate a suspended nanometer-scale HEMT. This approach offers promise for sensitive displacement detectors with sub-nanometer resolution and bandwidths into the microwave range.

Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

NASA Astrophysics Data System (ADS)

Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

2018-04-01

We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R. M.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R. C.; Gillespie, J.; Dellmer, R.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2002-12-01

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc 2O 3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ⩾90% their initial drain-source current. The Sc 2O 3-passivated devices retained ˜80% recovery of the current under the same conditions.

Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements

NASA Astrophysics Data System (ADS)

Volcheck, V. S.; Stempitsky, V. R.

2017-11-01

Self-heating has an adverse effect on characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs). Various solutions to the problem have been proposed, however, a temperature rise due to dissipated electrical power still hinders the production of high power and high speed GaN devices. In this paper, thermal management of GaN HEMT via few-layer graphene (FLG) heat spreading elements is investigated. It is shown that integration of the FLG elements on top of the device structure considerably reduces the maximum temperature and improves the DC and small signal AC performance.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

PubMed Central

Anderson, Travis; Ren, Fan; Pearton, Stephen; Kang, Byoung Sam; Wang, Hung-Ta; Chang, Chih-Yang; Lin, Jenshan

2009-01-01

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application. PMID:22408548

Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications

NASA Astrophysics Data System (ADS)

Packeer, F.; Mohamad Isa, M.; Mat Jubadi, W.; Ian, K. W.; Missous, M.

2013-07-01

This study focuses on the area of the epitaxial design, fabrication and characterization of a 1 µm gate-length InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs-InAlAs material systems. The advanced epitaxial layer design incorporates a highly strained aluminum-rich Schottky contact barrier, an indium-rich channel and a double delta-doped structure, which significantly improves upon the conventional low-noise pHEMT which suffers from high gate current leakage and low breakdown voltage. The outstanding achievements of the new design approach are 99% less gate current leakage and a 73% increase in breakdown voltage, compared with the conventional design. Furthermore, no degradation in RF performance is observed in terms of the cut-off frequency in this new highly tensile strained design. The remarkable performance of this advanced pHEMT design facilitates the implementation of outstanding low-noise devices.

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

NASA Astrophysics Data System (ADS)

Cheng, Zhi-Qun; Hu, Sha; Liu, Jun; Zhang, Qi-Jun

2011-03-01

In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shervin, Shahab; Asadirad, Mojtaba; Materials Science and Engineering Program, University of Houston, Houston, Texas 77204

This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strainmore » in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.« less

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

NASA Astrophysics Data System (ADS)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

Effects of structural modification on reliability of nanoscale nitride HEMTs

NASA Astrophysics Data System (ADS)

Gaddipati, Vamsi Mohan

AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect formations will be modeled by integrating molecular dynamics, and the influence of atomistic processes on charge and phonon transport and current degradation will be simulated using a coupled drift-diffusionthermodynamic framework.

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

PubMed Central

Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P.; Pearton, Stephen J.

2010-01-01

Background Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. Methods HEMT structures, consisting of a 3-μm-thick undoped GaN buffer, 30-Å-thick Al0.3Ga0.7N spacer, and 220-Å-thick silicon-doped Al0.3Ga0.7N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc2O3), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. Results The Sc2O3-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of ∼0.1 pH. A chloride ion detection limit of 10-8 M was achievedt with a HEMT sensor immobilized with the AgCl thin film. The drain–source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 μM. Conclusion There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensingt different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the glucose concentration for diabetic applications. PMID:20167182

Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

PubMed

Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

2010-01-01

Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the glucose concentration for diabetic applications. 2010 Diabetes Technology Society.

Dimension scaling effects on the yield sensitivity of HEMT digital circuits

NASA Technical Reports Server (NTRS)

Sarker, Jogendra C.; Purviance, John E.

1992-01-01

In our previous works, using a graphical tool, yield factor histograms, we studied the yield sensitivity of High Electron Mobility Transistors (HEMT) and HEMT circuit performance with the variation of process parameters. This work studies the scaling effects of process parameters on yield sensitivity of HEMT digital circuits. The results from two HEMT circuits are presented.

Reduced mobility and PPC in In(.20)Ga(.80)As / Al(.23)Ga(.77)As HEMT structure

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, Rafael A.; Haugland, Edward J.; Alterovitz, Samuel A.

1992-01-01

Transport properties of a pseudomorphic In(.20)Ga(.80)As/Al(.23)Ga(.77)As High Electron Mobility Transistor (HEMT) structure were measured by Hall and SdH techniques. Two samples of identical structures but with different doping levels were compared. Low temperature mobility measurements as a function of concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23 percent), large persistent photoconductivity (PPC) was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.

ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

NASA Astrophysics Data System (ADS)

Sun, Bing; Chang, Hudong; Wang, Shengkai; Niu, Jiebin; Liu, Honggang

2017-12-01

In0.52Al0.48As/In0.7Ga0.3As metamorphic high-electron-mobility transistors (mHEMTs) on GaAs substrates have been demonstrated. The devices feature an epitaxial structure with Si-doped InP/In0.52Al0.48As Schottky layers, together with an atomic layer deposition (ALD) Al2O3 passivation process. In comparison to the GaAs mHEMTs with plasma enhanced chemical vapor deposition (PECVD) SiN passivation, the devices with ALD Al2O3 passivation exhibit more than one order of magnitude lower gate leakage current (Jg) and much lower contact resistance (RC) and specific contact resistivity (ρC). 100-nm gate length (Lg) In0.52Al0.48As/In0.7Ga0.3As mHEMTs with Si-doped InP/In0.52Al0.48As Schottky layers and ALD Al2O3 passivation exhibit excellent DC and RF characteristics, such as a maximum oscillation frequency (fmax) of 388.2 GHz.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Jia-dong; Cheng, Jun-jie; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Zhang, Jin-cheng; Zhang, Zhi-qiang; Wu, Dong-min

2014-07-01

In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening.

Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs (POSTPRINT)

DTIC Science & Technology

2014-10-01

identifying and understanding the failure mechanisms that limit the safe operating area of GaN HEMTs. 15. SUBJECT TERMS aluminum gallium nitride... gallium nitride, HEMTs, semiconductor device reliability, transistors 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER...area of GaN HEMTs. Index Terms— Aluminum gallium nitride, gallium nitride, HEMTs, semiconductor device reliability, transistors. I. INTRODUCTION A

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Bin; Ma, Xiao-Hua, E-mail: xhma@xidian.edu.cn, E-mail: yhao@xidian.edu.cn; Chen, Wei-Wei

The parameters of open-gate structures treated with different etching time were monitored during the gate recess process, and their impacts on the threshold voltage (V{sub th}) of final fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based on open-gate structures were discussed in this paper. It is found that V{sub th} can exceed 0 V when channel resistance in the recessed region (R{sub on-open}) increases over ∼275 Ω mm, maximum current (I{sub Dmax}) decreases below ∼29 mA/mm, or recessed barrier thickness (t{sub RB}) is below ∼7.5 nm. In addition, t{sub RB} obtained by atomic force microscopy measurements and C-V measurements are also compared. Finally,more » theoretical common criteria based on the experimental results of this work for t{sub RB} and R{sub on-open} were established to evaluate the V{sub th} of a regular normally-off AlGaN/GaN HEMTs. The results indicate that these parameters of open-gate structure can be utilized to achieve normally-off HEMTs with controllable V{sub th}.« less

Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Cumulative dose 60Co gamma irradiation effects on AlGaN/GaN Schottky diodes and its area dependence

NASA Astrophysics Data System (ADS)

Sharma, Chandan; Laishram, Robert; Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

2018-04-01

Cumulative dose gamma radiation effects on current-voltage characteristics of GaN Schottky diodes have been investigated. The different area diodes have been fabricated on AlGaN/GaN high electron mobility transistor (HEMT) epi-layer structure grown over SiC substrate and irradiated with a dose up to the order of 104 Gray (Gy). Post irradiation characterization shows a shift in the turn-on voltage and improvement in reverse leakage current. Other calculated parameters include Schottky barrier height, ideality factor and reverse saturation current. Schottky barrier height has been decreased whereas reverse saturation current shows an increase in the value post irradiation with improvement in the ideality factor. Transfer length measurement (TLM) characterization shows an improvement in the contact resistance. Finally, diodes with larger area have more variation in the calculated parameters due to the induced local heating effect.

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

NASA Astrophysics Data System (ADS)

Latry, O.; Divay, A.; Fadil, D.; Dherbécourt, P.

2017-01-01

Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters. The Lambert function is used to give an explicit expression of the current in the Schottky junction. This function is applied with defined conduction phenomena, whereas other work presented arbitrary (or undefined) conduction mechanisms in such parameters’ extractions. Based upon AlGaN/GaN HEMT structures, extractions of parameters are undergone in order to provide physical characteristics. This work highlights a new expression of current with defined conduction phenomena in order to quantify the physical properties of Schottky contacts in AlGaN/GaN HEMT transistors. Project supported by the French Department of Defense (DGA).

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laurent, Matthew A.; Gupta, Geetak; Wienecke, Steven

Al{sub x}In{sub y}Ga{sub (1-x-y)}N materials show promise for use in GaN-based heterojunction devices. The growth of these materials has developed to the point where they are beginning to see implementation in high electron mobility transistors (HEMTs) and light emitting diodes. However, the electrical properties of these materials are still poorly understood, especially as related to the net polarization charge at the AlInGaN/GaN interface (Q{sub π}(net)). All theoretical calculations of Q{sub π}(net) share the same weakness: dependence upon polarization bowing parameters, which describe the deviation in Q{sub π}(net) from Vegard's law. In this study, direct analysis of Q{sub π}(net) for Al{submore » 0.54}In{sub 0.12}Ga{sub 0.34}N/GaN HEMTs is reported as extracted from C-V, I-V, and Hall measurements performed on samples grown by metalorganic chemical vapor deposition. An average value for Q{sub π}(net) is calculated to be 2.015 × 10{sup −6} C/cm{sup 2}, with just 6.5% variation between measurement techniques.« less

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

NASA Astrophysics Data System (ADS)

Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

2018-04-01

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

2016-03-01

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

PubMed Central

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

DTIC Science & Technology

2011-12-01

grown on GaAs by molecular beam epitaxy and the defect-free active device layers. Fig. 1(c) shows the quantitative mobility spec- trum analysis (QMSA...dielectric deposition. A Pd/Au gate metal was defined using e- beam lithography and 0741-3106/$26.00 © 2011 IEEE Report Documentation Page Form...2010, pp. 6.3.1–6.3.4. [2] N. Kharche, G. Klimeck, D. Kim, J. A. del Alamo, and M. Luisier, “Performance analysis of ultra-scaled InAs HEMTs ,” in IEDM

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Zhu, Hui; Meng, Xiao; Zheng, Xiang; Yang, Ying; Feng, Shiwei; Zhang, Yamin; Guo, Chunsheng

2018-07-01

We studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs. By thinning their sapphire substrate from 460 μm to 80 μm, we varied the residual stress in these HEMTs. The thinned sample showed decreased drain-source current and occurrence of kink effect. Furthermore, shown by current transient measurements and time constant analysis, the detrapping behaviors of trap states shifted toward a larger time constant, and the detrapping behavior under the gate and in the gate-drain access region showed increased amplitude. By using pulsed current-voltage measurements, the thinned sample showed a positive shift of the threshold voltage, a decrease in peak transconductance, and an aggravation in current collapse, as compared with the thick one. The degradation of electrical behavior were associated with the structural degradation, as confirmed by the increase of pit density on the thinned sample surface.

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaNHEMTs

NASA Astrophysics Data System (ADS)

Cheng, Zhi-Qun; Cai, Yong; Liu, Jie; Zhou, Yu-Gang; Lau Kei, May; Chen, Kevin J.

2007-11-01

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm × 100 μm device showed very high-dynamic range with decent gain and noise figure.

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

NASA Astrophysics Data System (ADS)

Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.

2007-12-01

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm-14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.

The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defectsmore » that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.« less

Scaling Projections for Sb-based p-channel FETs

DTIC Science & Technology

2010-01-01

the products of long-standing programs on antimonide growth by molecular beam epitaxy at the QinetiQ Corp. (for InSb) and at the Naval Research...electron mobilities in the channels of III–V HEMTs at room temperature are much higher than in Si or Ge, e.g., in InAs they are in the range of 20–30,000 cm2... HEMT structures. IEEE Trans Electron Dev 1985;32:11. [25] Awano Y, Kosugi M, Kosemura K, Mimura T, Abe M. Short-channel effects in subquarter

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

NASA Astrophysics Data System (ADS)

Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

2016-04-01

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

NASA Astrophysics Data System (ADS)

Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu; Buchwald, Walter R.

2011-05-01

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Failure Mechanisms for III-Nitride HEMT Devices

DTIC Science & Technology

2013-11-19

rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates, J. Cryst. Growth 380, 14-17 (2013). ii) Conference presentations (Invited...1 eFinal Report – AOARD Grant FA-2386-11-1-4107 Failure Mechanisms for III-nitride HEMT devices 19 November 2013 Principal Investigators: Martha...aspects of III-nitride HEMT materials and devices. Energy-filtered imaging of unstressed and stressed Ni/Au-gated AlGaN/GaN HEMTs indicated that

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

NASA Astrophysics Data System (ADS)

Haris, Norshakila; Kyabaggu, Peter B. K.; Alim, Mohammad A.; Rezazadeh, Ali A.

2017-05-01

In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint’s Own Model—Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

Low Resistance, Unannealed ohmic Contacts to n-Type InAs0.66Sb0.34

DTIC Science & Technology

2007-11-08

by solid-source molecular beam epitaxy (MBE). Structures consisted of a semi-insulating GaAs substrate, a 1.0 mm undoped AlSb buffer, and 1.0 mm n...6.1 Å-based HEMTs have been demonstrated recently [1, 2]. New materials such as InxGa1-xSb, InAsySb1-y, and InxAl1-xAsySb1-y, with lattice constants...speed operation [3]. Initial work on HEMTs and InAs heterojunction bipolar transistors (HBTs) has been promising [1, 4–7], but the fabrication of 6.2 Å

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

NASA Astrophysics Data System (ADS)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2016-03-15

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for themore » 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.« less

Three-Stage InP Submillimeter-Wave MMIC Amplifier

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

2008-01-01

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

80-GHz MMIC HEMT Voltage-Controlled Oscillator

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi

2003-01-01

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Metal oxide, Group V-VI chalcogenides and GaN/AlGaN photodetectors

NASA Astrophysics Data System (ADS)

Hasan, Md. Rezaul

In this work, a simple, low-cost and catalyst free one-step solution processing of onedimensional Sb2S3 nanostructures on polyimide substrates was done. This structure demonstrated its potential application as a photoconductor in the UV and visible regime. Using-field emission scanning electron microscopy (SEM), grazing incidence X-Ray diffraction, Raman spectra and transmission electron microscopy measurements, it was shown that the Sb 2S3 films have high crystallinity, uniform morphology and nearstoichiometric composition. Further, using tauc plot, it was found that the films have a direct bandgap of 1.67 eV. MSM photodetectors, fabricated using these films showed a clear photo response in both UV as well as visible wavelength. These devices showed UV on/off ratio as high as 160 under the light intensity of 30 mW/cm2 and a small rise time and fall time of 44 ms 28 ms respectively. The effect of geometry of metal pad and bonding wire orientation of a multi-channel FET on the coupling of THz radiation was studied. The spatial variation images were taken by raster scan with the resolution of 0.07 mm steps in both x and y directions. An effective gate bias, where the effect of noise is minimum and photoresponse is maximum, was used for imaging. By applying VGS =-2.8V and VDS =380mV, the images were taken for all different combinations of activated bonding wires and metal pads. It was observed that, effect of bonding wire orientation is negligible for the large source pad as the radiation is coupled basically between drain and gate pad. Effect of drain bonding wire on coupling depends on the maximum width or diameter of metal pad and the incoming wavelength. In this work, Position of activated Drain pad and orientation of respective bonding wire defined the image tilting angle. Voltage drop across the shorting metal between drain pads, also played a role in increasing the asymmetry by selectively exciting a certain portion of FET Channels more than the other portion. Position of gate pad defined the center point of the image without tilting the image as the geometry of the gate pads were parallel to each other. And there was no effect of gate pad bonding wire orientation because of the larger width of gate pads. For the GaN/AlGaNHEMT, the effect of Al mole fraction in AlGaN layer and the effect of gate oxide on the DC and low frequency noise characterization was studied. MOSHEMT with SiO2 improved the Id(on)/I d(off) ratio up to more than 8 orders, while it is only 10 times in conventional HEMT. It was shown that the gate leakage and isolation leakage suppression efficiency improved dramatically with the oxide. Subthreshold swing (SS) of MOS-HEMTs with different Al mole fraction (from 20% to 35%) vary slightly from 72 mV/decade to 79 mV/decade, but the conventional GaN/AlGaN HEMT showed SS of 2.4V/decade. Low frequency noise study revealed the difference in transport mechanism between HEMT and MOS-HEMTs. By using Carrier Number Fluctuation (CNF) model on the measured data, it was found that the noise is predominantly coming from the surface states. While generation-recombination is very prominent in conventional HEMT, it is very weak and insignificant in both MOS-HEMTs at much higher frequencies. This study reveals that very high number of surface states assisting the tunneling in schottky/AlGaN barrier is responsible for unusually high leakage and higher noise level in conventional HEMT. Leakage level is improved from mA/mm range for HEMT to pA/mm range for MOS-HEMTs. Leakage suppression improvement and minimization of noise level can be mainly attributed to high quality SiO2. Hooge's constant was in the order of 5-6x10-3 in MOS-HEMTs, which is 5x10 -2 for conventional HEMT indicating much lower noise level in the MOS-HEMTs. (Abstract shortened by ProQuest.).

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Electrical and structural characteristics of metamorphic In{sub 0.38}Al{sub 0.62}As/In{sub 0.37}Ga{sub 0.63}As/In{sub 0.38}Al{sub 0.62}As HEMT nanoheterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B., E-mail: s_s_e_r_p@mail.ru; Klimov, E. A.; Klochkov, A. N.

The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In{sub 0.38}Al{sub 0.62}As/In{sub 0.37}Ga{sub 0.63}As/In{sub 0.38}Al{sub 0.62}As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In{sub x}Al{sub 1-x}As is formed with a linear or stepwise (by {Delta}{sub x} = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensionalmore » electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size.« less

PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Gritsenko, I. A.; Sheshin, G. A.

2015-04-01

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10-100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

NASA Technical Reports Server (NTRS)

Bautista, J. J.; Laskar, J.; Szydlik, P.

1995-01-01

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC

NASA Astrophysics Data System (ADS)

Campos-Roca, Yolanda; Amado-Rey, Belén; Wagner, Sandrine; Leuther, Arnulf; Bangert, Axel; Gómez-Alcalá, Rafael; Tessmann, Axel

2017-05-01

The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements on test structures, this approach has been used to model the most critical passive structures involved in the layout of a state-of-the-art 200-GHz power amplifier based on metamorphic high electron mobility transistors (mHEMTs). This millimeter-wave monolithic integrated circuit (MMIC) has demonstrated a measured output power of 8.7 dBm for an input power of 0 dBm at 200 GHz. The measured output power density and power-added efficiency (PAE) are 46.3 mW/mm and 4.5 %, respectively. The peak measured small-signal gain is 12.7 dB (obtained at 196 GHz). A good agreement has been obtained between measurements and simulation results.

A low insertion loss GaAs pHEMT switch utilizing dual n +-doping AlAs etching stop layers design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Lin, Da-Wei; Yang, Chih-Wei; Fu, Jeffrey S.; Chiu, Hsien-Chin

2010-03-01

A low insertion loss single-pole-single-throw (SPST) pseudomorphic high electron mobility transistor (pHEMT) switch utilizing the n +-type doping in AlAs etching stop layer was fabricated and investigated. This novel design reduces device sheet resistance resulting in an improvement of dc and rf power performance. In addition, the gate recess selectivity for GaAs/AlAs interface was not sacrificed after highly n +-type doping in AlAs etching stop layer. The pHEMT with n +-AlAs etching stop layer, also named Modified pHEMT (M-pHEMT), demonstrated a lower sheet resistance ( Rsh) of 65.9 Ω/γ, a higher maximum drain-to-source current ( Idmax) of 317.8 mA/mm and a higher peak transconductance ( gm) of 259.3 mS/mm which are superior to standard pHEMT performance with values of 71.9 Ω/γ, 290.3 mA/mm and 252.1 mS/mm, respectively. Due to a significant sheet resistance improvement from this novel epitaxial design, an SPST pHEMT switch was realized to manifest its industrial application potential. The results achieved an on-state insertion loss of 1.42 dB, an off-state isolation of 13.02 dB at 0.9 GHz, which were superior to traditional pHEMT switch under same condition of operation with values of 1.68 dB and 11.42 dB, respectively. It is proved that dual n +-doping AlAs etching stop layers scheme is beneficial for low loss microwave switches applications.

Emission of Coherent Radiation from Ultra-High Mobility Carriers in Nano-structured Materials

DTIC Science & Technology

2011-03-31

semiconductor in such HEMTs.  Assuming m*= 0.4 m0, the critical velocity for round trip gain at  300 K is  cm/ s 10 x 1.1/v 7*c mTk B .  Recent  high ‐ power  HEMTs... High Mobility 5a. CONTRACT NUMBER W911NF-08-C-0126 Carriers in Nano-structured Materials 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR( S ) 5d...tunable, CW,  high ‐ power  characteristics of backward oscilla‐ tors and free electron  lasers with the compactness, portability,  low cost, and  high

Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-01

Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) by John E Penn...for Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide by John E Penn...µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.

2017-11-01

We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

PubMed Central

Lu, Jonathan Y.; Grafendorfer, Thomas; Zhang, Tao; Vasanawala, Shreyas; Robb, Fraser; Pauly, John M.; Scott, Greig C.

2017-01-01

Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered. PMID:27362895

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

NASA Technical Reports Server (NTRS)

Bautista, J. J.

1993-01-01

The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

Oxygen and carbon dioxide sensing

NASA Technical Reports Server (NTRS)

Ren, Fan (Inventor); Pearton, Stephen John (Inventor)

2012-01-01

A high electron mobility transistor (HEMT) capable of performing as a CO.sub.2 or O.sub.2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D.

2007-11-01

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA/mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3-5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ˜3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2/Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge's constant measured by low frequency noise spectral density characterization is 3.7×10-5 for the same device.

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes ofmore » both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.« less

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE PAGES

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan; ...

2017-08-16

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

DTIC Science & Technology

2015-03-01

Photoluminescence Form InxAl1-xN Films Deposited by Plasma-Assisted Molecular Beam Epitaxy ,” Submitted to Applied Physics Letters, July 2014. 8 LIST OF...TECHNICAL REPORT RDMR-WD-14-55 LOW TEMPERATURE PHOTOLUMINESCENCE (PL) FROM HIGH ELECTRON MOBILITY TRANSISTORS ( HEMTS ...Mobility Transistors ( HEMTs ) 5. FUNDING NUMBERS 6. AUTHOR(S) Adam T. Roberts and Henry O. Everitt 7. PERFORMING ORGANIZATION NAME(S

Distortion Properties of GaN Switches at High-Temperatures

NASA Astrophysics Data System (ADS)

Kameche, Mohamed

2006-08-01

The origins of HEMT distortion in passive control applications as SPST switch are presented in this paper. Also, this paper describes the change of the AlGaN/GaN HEMT switch distortion properties (second-and third distortion intercept points) over a wide range of temperature. The results indicate that the change in second-and third-order distortion intercept points is smaller (about 2dBm) over a wide range of temperature from -50 to +300°C. A comparison of the GaN-based HEMT switch with InP-and GaAs-HEMT switches shows that the GaN technology generates lower distortion than its InP and GaAs technologies counterpart.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yu; Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015; Zhang, Xiaohui

2014-11-24

We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic devicemore » as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.« less

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

A cooled 1- to 2-GHz balanced HEMT amplifier

NASA Technical Reports Server (NTRS)

Ortiz, Gerardo G.; Padin, Steven

1991-01-01

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

GaN-on-Silicon - Present capabilities and future directions

NASA Astrophysics Data System (ADS)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

NASA Technical Reports Server (NTRS)

Wilkinson, David T.; Page, Lyman

1995-01-01

The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

NASA Astrophysics Data System (ADS)

Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

2017-06-01

In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

Kinase detection with gallium nitride based high electron mobility transistors

PubMed Central

Makowski, Matthew S.; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

2013-01-01

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing. PMID:23918992

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devicesmore » is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.« less

Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

PubMed

Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar

2014-08-01

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

An improved large signal model of InP HEMTs

NASA Astrophysics Data System (ADS)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

NASA Astrophysics Data System (ADS)

Cordier, Y.; Azize, M.; Baron, N.; Chenot, S.; Tottereau, O.; Massies, J.

2007-11-01

In this work, we show that, by carefully designing the subsurface Fe doping profile in SI-GaN templates grown by MOVPE and by optimizing the MBE regrowth conditions, a highly resistive GaN buffer can be achieved on these epi-ready GaN-on-sapphire templates without any addition of acceptors during the regrowth. As a result, high-quality high electron mobility transistors can be fabricated. Furthermore, we report on the excellent properties of two-dimensional electron gas and device performances with electron mobility greater than 2000 cm 2/V s at room temperature and off-state buffer leakage currents as low as 5 μA/mm at 100 V.

Design and simulation of a novel 1400 V-4000 V enhancement mode buried gate GaN HEMT for power applications

NASA Astrophysics Data System (ADS)

Faramehr, Soroush; Kalna, Karol; Igić, Petar

2014-11-01

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V-4000 V for a source-to-drain spacing (LSD) of 6 μm-32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance RS for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm2 and 3.5 mΩ · cm2, respectively. Further improvement up to BV = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of RS = 35.5 mΩ · cm2. The leakage current in the proposed devices stays in the range of ˜5 × 10-9 mA mm-1.

Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guan, He; Lv, Hongliang; Guo, Hui, E-mail: hguan@stu.xidian.edu.cn

2015-11-21

Impact ionization affects the radio-frequency (RF) behavior of high-electron-mobility transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this necessitates complex parameter extraction procedures for HEMT modeling. In this paper, an enhanced small-signal equivalent circuit model is developed to investigate the impact ionization, and an improved method is presented in detail for direct extraction of intrinsic parameters using two-step measurements in low-frequency and high-frequency regimes. The practicability of the enhanced model and the proposed direct parameter extraction method are verified by comparing the simulated S-parameters with published experimental data from an InAs/AlSb HEMT operating over a wide frequency range. The resultsmore » demonstrate that the enhanced model with optimal intrinsic parameter values that were obtained by the direct extraction approach can effectively characterize the effects of impact ionization on the RF performance of HEMTs.« less

Microwave characteristics of interdigitated photoconductors on a HEMT structure. M.S. Thesis. Final Contractor Report

NASA Technical Reports Server (NTRS)

Hill, Scott M.; Claspy, Paul C.

1988-01-01

Interdigitated photoconductive detectors of various geometries were fabricated on AlGaAs/GaAs heterostructure material. The processes used in the fabrication of these devices are described, and the results of a study of their optical and electrical characteristics are presented.

Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

NASA Astrophysics Data System (ADS)

Zhan, Xiang-Mi; Hao, Mei-Lan; Wang, Quan; Li, Wei; Xiao, Hong-Ling; Feng, Chun; Jiang, Li-Juan; Wang, Cui-Mei; Wang, Xiao-Liang; Wang, Zhan-Guo

2017-03-01

Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ( {V}{DS}=0.5 V) shows a clear decrease of 69 μA upon the introduction of 1 μmolL {}-1 (μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge. Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301, the National Natural Sciences Foundation of China under Grant No 61334002, and the National Science and Technology Major Project.

Fabrication and characterization of zinc oxide and gallium nitride based sensors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta

Pt-coated ZnO nanorods show a decrease of 8% resistance upon exposure to 500 ppm hydrogen in room temperature. This is a factor of two larger than that obtained with Pd; approximately 95% of the initial ZnO conductance was recovered within 20 s by exposing the nanorods to O2. This rapid and easy recoverability makes the ZnO nanorods suitable for ppm-level sensing at room temperature with low power consumption. Pt-gated AlGaN/GaN based high electron mobility transistors (HEMTs) showed that Schottky diode operation provides large relative sensitivity over a narrow range around turn-on voltage; the differential designed Schottky diodes with AlGaN/GaN hetero-structure was shown to provide robust detection of 1% H 2 in air at 25°C, which remove false alarms from ambient temperature variations; moreover, the use of TiB2-based Ohmic contacts on Pt-Schottky contacted AlGaN/GaN based hydrogen sensing diodes was shown to provide more stable operation. Thioglycolic acid functionalized Au-gated AlGaN/GaN based HEMTs were used to detect mercury (II) ions. A fast detection (>5 seconds) was achieved. This is the shortest response ever reported. The sensors were able to detect mercury (II) ion concentration as low as 10-7 M. The sensors showed an excellent sensing selectivity of more than 100 of detecting mercury ions over sodium, magnesium, and lead ions, but not copper. AlGaN/GaN based HEMTs were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The HEMT gate region was coated with KIM-1 antibodies and the HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline (PBS) solution. The limit of detection (LOD) was 1ng/ml using a 20 mum x50 mum gate sensing area. This approach shows a potential for both preclinical and clinical disease diagnosis with accurate, rapid, noninvasive, and high throughput capabilities. The rest of this dissertation includes ZnO band edge electroluminescence from N+-implanted ZnO bulk, and the investigation of cryogenic gold Schottky contact on GaAs for enhancing device thermal stability.

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

NASA Astrophysics Data System (ADS)

Mun, Jae Kyoung; Ji, Hong Gu; Ahn, Hyokyun; Kim, Haecheon; Park, Chong-Ook

2005-08-01

In this paper, we propose a channel structure for a promising switch pHEMT with excellent isolation characteristics based on the distribution of electric field intensity beneath the Schottky contact in the transistor. Using the proposed device channel structure, SPST and SPDT switches were designed and fabricated, applicable to 2.4 GHz and 5.8 GHz WLAN systems. We discuss the relationship between dc characteristics and switch parameters in this paper in detail. The developed SPST switch exhibits a low insertion loss of 0.26 dB and a high isolation of 34.3 dB with a control voltage of 0 V/-3 V at 5.8 GHz. The SPDT also shows a good performance of 0.85 dB insertion loss and 31.5 dB isolation under the same conditions. The measured power-handling capability at 2.4 GHz reveals that the SPDT has an output power of 27 dBm at the 1 dB compression point and a third-order intercept point of more than 46 dBm.

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

NASA Astrophysics Data System (ADS)

Ji, Panfeng; Yang, Xuelin; Feng, Yuxia; Cheng, Jianpeng; Zhang, Jie; Hu, Anqi; Song, Chunyan; Wu, Shan; Shen, Jianfei; Tang, Jun; Tao, Chun; Pan, Yaobo; Wang, Xinqiang; Shen, Bo

2017-04-01

By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm-2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.

Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

NASA Astrophysics Data System (ADS)

Saravana Kumar, R.; Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.

2018-03-01

The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As subchannel DG-HEMT with optimised device structure of 2 nm In0.48Al0.52As barrier layer show a peak gm of 3.09 mS/µm, VT of 0.29 V, ION/IOFF ratio of 2.24 × 105, subthreshold slope 73 mV/decade and drain induced barrier lowering 68 mV/V with fT and fmax of 776 and 905 GHz at Vds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.

Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

NASA Astrophysics Data System (ADS)

Rabbaa, S.; Stiens, J.

2012-11-01

Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

HEMT Amplifiers and Equipment for their On-Wafer Testing

NASA Technical Reports Server (NTRS)

Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard

2008-01-01

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

NASA Astrophysics Data System (ADS)

Jarndal, Anwar; Ghannouchi, Fadhel M.

2016-09-01

In this paper, an improved modeling approach has been developed and validated for GaN high electron mobility transistors (HEMTs). The proposed analytical model accurately simulates the drain current and its inherent trapping and thermal effects. Genetic-algorithm-based procedure is developed to automatically find the fitting parameters of the model. The developed modeling technique is implemented on a packaged GaN-on-Si HEMT and validated by DC and small-/large-signal RF measurements. The model is also employed for designing and realizing a switch-mode inverse class-F power amplifier. The amplifier simulations showed a very good agreement with RF large-signal measurements.

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

A compact model of the reverse gate-leakage current in GaN-based HEMTs

NASA Astrophysics Data System (ADS)

Ma, Xiaoyu; Huang, Junkai; Fang, Jielin; Deng, Wanling

2016-12-01

The gate-leakage behavior in GaN-based high electron mobility transistors (HEMTs) is studied as a function of applied bias and temperature. A model to calculate this current is given, which shows that trap-assisted tunneling, trap-assisted Frenkel-Poole (FP) emission, and direct Fowler-Nordheim (FN) tunneling have their main contributions at different electric field regions. In addition, the proposed model clearly illustrates the effect of traps and their assistance to the gate leakage. We have demonstrated the validity of the model by comparisons between model simulation results and measured experimental data of HEMTs, and a good agreement is obtained.

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Armstrong, Andrew M.; Klein, Brianna; Allerman, Andrew A.; Douglas, Erica A.; Baca, Albert G.; Crawford, Mary H.; Pickrell, Greg W.; Sanchez, Carlos A.

2018-03-01

Visible- and solar-blind detection was demonstrated using Al0.45Ga0.55N/Al0.30Ga0.70N and Al0.85Ga0.25N/Al0.70Ga0.30N high electron mobility transistors (HEMTs), respectively. Peak responsivities (S) of 3.9 × 106 A/W in the saturation mode and 6.2 × 104 A/W in the pinch-off mode were observed for the visible-blind Al0.45Ga0.55N/Al0.30Ga0.70N HEMT, and a peak S of 4.9 × 104 A/W was observed for the solar-blind Al0.85Ga0.15N/Al0.70Ga0.30N HEMT in the saturation mode. Spectrally resolved photocurrent investigation indicated that sub-bandgap absorption by defect states was the primary origin of the HEMTs' photoresponse. Defect-mediated responsivity caused slow photocurrent rise and fall times, but electrical pulsing was used to improve the bandwidth at the cost of optical gain. Operating HEMTs in this dynamic mode achieved a 25 Hz bandwidth with S = 2.9 × 105 A/W in accumulation and S = 2.0 × 104 A/W in pinch-off for visible-blind detection and S = 5.1 × 103 A/W for solar-blind detection.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

RLE (Research Laboratory of Electronics) Progress Report Number 129.

DTIC Science & Technology

1987-01-01

8217," ’,/’.’t MICROCOP ,"Y RESOLUTION TEST C-’HA"-/’%’.’."."% "-’- -" "."o -- - -" " OI FILE COPYAJ MASSACHUSETTS INSTITUTE OF EHOGYD The RESEARCH LABORATORY of...Intercalation Compound Structures and Transitions .................................. 59 10.0 Semiconductor Surface Studies...understanding of the HEMT, which is the basic block in building surface superlattices on III-V compound materials, our device structure has been simu

Engineering the Ideal Array (BRIEFING CHARTS)

DTIC Science & Technology

2007-03-05

48 V, f = 10 GHz GaN HEMT Transistor i t Dramatically higher: • Output power • Efficiency • Bandwidth GaN HEMT Power Amplifier lifi ...functions – RF amplifiers – 4-bit phase shifters – Amplitude controllers – Summing network – Power control – Latches for phase state – Address

Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

NASA Astrophysics Data System (ADS)

Yu, Haijiang

This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation into AlGaN/GaN high electron mobility transistor processing has been first demonstrated. An ultra-high temperature (1500°C) rapid thermal annealing technique was developed for the activation of Si dopants implanted in the source and drain. In comparison to control devices processed by conventional fabrication, the implanted device with nonalloyed ohmic contact showed comparable device performance with a contact resistance of 0.4 Omm Imax 730 mA/mm ft/f max; 26/62 GHz and power 3.4 W/mm on sapphire. These early results demonstrate the feasibility of implantation incorporation into GaN based device processing as well as the potential to increase yield, reproducibility and reliability in AlGaN/GaN HEMTs.

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

MMIC HEMT Power Amplifier for 140 to 170 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro

2003-01-01

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

An evaluation of HEMT potential for millimeter-wave signal sources using interpolation and harmonic balance techniques

NASA Technical Reports Server (NTRS)

Kwon, Youngwoo; Pavlidis, Dimitris; Tutt, Marcel N.

1991-01-01

A large-signal analysis method based on an harmonic balance technique and a 2-D cubic spline interpolation function has been developed and applied to the prediction of InP-based HEMT oscillator performance for frequencies extending up to the submillimeter-wave range. The large-signal analysis method uses a limited number of DC and small-signal S-parameter data and allows the accurate characterization of HEMT large-signal behavior. The method has been validated experimentally using load-pull measurement. Oscillation frequency, power performance, and load requirements are discussed, with an operation capability of 300 GHz predicted using state-of-the-art devices (fmax is approximately equal to 450 GHz).

100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications.

PubMed

Gardès, Cyrille; Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier; Roelens, Yannick

2014-01-01

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

Compact, Single-Stage MMIC InP HEMT Amplifier

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard

2008-01-01

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

NASA Technical Reports Server (NTRS)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Turutanov, O. G.; Shnyrkov, V. I.

2016-07-01

A technically simple and physically clear method is suggested for direct measurement of the brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the "back action" problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in heterostructures.

Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi

2013-12-04

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

PubMed Central

Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier

2014-01-01

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f T/f max of 100/125 GHz together with minimum noise figure NFmin = 0.5 dB and associated gain G ass = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. PMID:24707193

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

NASA Astrophysics Data System (ADS)

Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

NASA Technical Reports Server (NTRS)

Rosenbaum, Steven E.; Kormanyos, Brian K.; Jelloian, Linda M.; Matloubian, Mehran; Brown, April S.; Larson, Lawrence E.; Nguyen, Loi D.; Thompson, Mark A.; Katehi, Linda P. B.; Rebeiz, Gabriel M.

1995-01-01

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

Ionization Readout Electronics for SuperCDMS SNOLAB Employing a HEMT Front-End

NASA Astrophysics Data System (ADS)

Partridge, R.

2014-09-01

The SuperCDMS SNOLAB experiment seeks to deploy 200 kg of cryogenic Ge detectors employing phonon and ionization readout to identify dark matter interactions. One of the design challenges for the experiment is to provide amplification of the high impedance ionization signal while minimizing power dissipation and noise. This paper describes the design and expected performance of the ionization readout being developed for an engineering model of the SuperCDMS SNOLAB Ge Tower System. The readout features the use of a low-noise HEMT front end transistor operating at 4 K to achieve a power dissipation of 100 W per channel, local grounding to minimize noise injection, and biasing circuitry that allows precise control of the HEMT operating point.

Multi-physics analysis of hybrid graphene/semiconductor plasmonic terahertz sources (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nafari, Mona; Aizin, Gregory R.; Jornet, Josep M.

2017-05-01

Wireless data rates have doubled every eighteen months for the last three decades. Following this trend, Terabit-per-second links will become a reality within the next five years. In this context, Terahertz (THz) band (0.1-10 THz) communication is envisioned as a key technology of the next decade. Despite major progress towards developing THz sources, compact signal generators above 1 THz able to efficiently work at room temperature are still missing. Recently, the use of hybrid graphene/semiconductor high-electron-mobility transistors (HEMT) has been proposed as a way to generate Surface Plasmon Polariton (SPP) waves at THz frequencies. Compact size, room-temperature operation and tunability of the graphene layer, in addition to possibility for large scale integration, motivate the exploration of this approach. In this paper, a simulation model of hybrid graphene/semiconductor HEMT-based THz sources is developed. More specifically, first, the necessary conditions for the so-called Dyakonov-Shur instability to arise within the HEMT channel are derived, and the impact of imperfect boundary conditions is analyzed. Second, the required conditions for coupling between a confined plasma wave in the HEMT channel and a SPP wave in graphene are derived, by starting from the coupling analysis between two 2DEG. Multi-physics simulation are conducted by integrating the hydrodynamic equations for the description of the HEMT device with Maxwell's equations for SPP modeling. Extensive results are provided to analyze the impact of different design elements on the THz signal source. This work will guide the experimental fabrication and characterization of the devices.

Channel Temperature Estimates for Microwave AlGaN/GaN Power HEMTS on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

A simple technique to estimate the channel temperature of a generic AlGaN/GaN HEMTs on SiC or Sapphire, while incorporating temperature dependence of the thermal conductivity is presented. The procedure is validated b y comparing it's predictions with the experimentally measured temperatures in devices presented in three recently published articles.

Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.

2016-10-15

The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without themore » insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.« less

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1987-08-01

This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the Computer Aided Design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

A new assessment method of pHEMT models by comparing relative errors of drain current and its derivatives up to the third order

NASA Astrophysics Data System (ADS)

Dobeš, Josef; Grábner, Martin; Puričer, Pavel; Vejražka, František; Míchal, Jan; Popp, Jakub

2017-05-01

Nowadays, there exist relatively precise pHEMT models available for computer-aided design, and they are frequently compared to each other. However, such comparisons are mostly based on absolute errors of drain-current equations and their derivatives. In the paper, a novel method is suggested based on relative root-mean-square errors of both drain current and its derivatives up to the third order. Moreover, the relative errors are subsequently relativized to the best model in each category to further clarify obtained accuracies of both drain current and its derivatives. Furthermore, one our older and two newly suggested models are also included in comparison with the traditionally precise Ahmed, TOM-2 and Materka ones. The assessment is performed using measured characteristics of a pHEMT operating up to 110 GHz. Finally, a usability of the proposed models including the higher-order derivatives is illustrated using s-parameters analysis and measurement at more operating points as well as computation and measurement of IP3 points of a low-noise amplifier of a multi-constellation satellite navigation receiver with ATF-54143 pHEMT.

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.

2015-02-02

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaNmore » HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.« less

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

NASA Astrophysics Data System (ADS)

Yang, Liu; Chang-Chun, Chai; Yin-Tang, Yang; Jing, Sun; Zhi-Peng, Li

2016-04-01

In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

2014-04-01

Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2015-08-15

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for themore » (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.« less

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Bryerton, Eric; Pukala, David; Peralta, Alejandro; Hu, Ming; Schmitz, Adele

2005-01-01

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

DC and small-signal physical models for the AlGaAs/GaAs high electron mobility transistor

NASA Technical Reports Server (NTRS)

Sarker, J. C.; Purviance, J. E.

1991-01-01

Analytical and numerical models are developed for the microwave small-signal performance, such as transconductance, gate-to-source capacitance, current gain cut-off frequency and the optimum cut-off frequency of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT), in both normal and compressed transconductance regions. The validated I-V characteristics and the small-signal performances of four HeMT's are presented.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

NASA Astrophysics Data System (ADS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-06-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr0.52Ti0.48)-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (gm-Vg) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

NASA Astrophysics Data System (ADS)

Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.

2016-02-01

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2004-01-01

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; La Roche, J. R.; Ren, F.; Pearton, S. J.

2004-03-01

Measurement of the electrical characteristics of 250 devices on the same 2 in. diameter wafer shows that Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors (HEMTs) have lower average specific contact resistance after annealing at 850 °C for 30 s (4.6×10-5 Ω cm2) compared to more standard Ti/Al/Ni/Au contacts (2×10-4 Ω cm2). HEMTs with these Ir-based contacts also show average interdevice isolation currents approximately a factor of 2 lower, higher peak transconductance (134 mS/mm compared to 121 mS/mm), and higher device breakdown voltage (31 V compared to 23 V) than the devices with Ni-based contacts. This Ir-based contact metallurgy looks promising for applications requiring extended thermal stability of the HEMTs.

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-01-01

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

Degradation Mechanisms for GaN and GaAs High Speed Transistors

PubMed Central

Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

2012-01-01

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

Deep Space Network, Cryogenic HEMT LNAs

NASA Technical Reports Server (NTRS)

Bautista, J. Javier

2006-01-01

Exploration of the Solar System with automated spacecraft that are more than ten astronomical units (1 AU = 149,597,870.691 km) from earth requires very large antennae employing extremely sensitive receivers. A key figure of merit in the specification of the spacecraft-to-earth telecommunications link is the ratio of the antenna gain to operatio nal noise temperature (G/Top) of the system. The Deep Space Network (DSN) receivers are cryogenic, low-noise amplifiers (LNAs) which addres s the need to maintain Top as low as technology permits. Historicall y, the extra-ordinarily sensitive receive systems operated by the DSN have required ctyogenically cooled, ruby masers, operating at a physi cal temperature near the boiling point of helium, as the LNA. Althoug h masers continue to be used today, they are hand crafted at JPL and expensive to manufacture and maintain. Recent advances in the developm ent of indium phosphide (InP) based high electron mobility transistor s (HEMTs) combined with cryogenic cooling near the boiling point of h ydrogen have made this alternate technology comparable with and a fraction of the cost of maser technology. InP HEMT LNA modules are demons trating noise temperatures less than ten times the quantum noise limi t (10hf/k) from 1 to 100 GHz. To date, the lowest noise LNA modules developed for the DSN have demonstrated noise temperatures of 3.5 K and 8.5 K at 8.5 K at 32 GHz, respectively. Front-end receiver packages employing these modules have demonstrated operating system noise temperatures of 17 K at 8.4 GHz (on a 70m antenna at zenith) and 39 K at 3 2 GHz (on a 34m antenna at zenith). The development and demonstration of cryogenic, InP HEMT based front-end amplifiers for the DSN requir es accurate component and module characterization, and modeling from 1 to 100 GHz at physical temperatures down to 12 K. The characterizati on and modeling begins with the HEMT chip, proceeds to the multi-stag e HEMT LNA module, and culminates with the complete front-end cryogenic receiver package for the antenna. This presentation will provide a n overview of this development process. Examples will be shown for de vices, LNA modules, front-end receiver packages, antennae employing these packages and the improvements to the down-link capacity.

A new expression of Ns versus Ef to an accurate control charge model for AlGaAs/GaAs

NASA Astrophysics Data System (ADS)

Bouneb, I.; Kerrour, F.

2016-03-01

Semi-conductor components become the privileged support of information and communication, particularly appreciation to the development of the internet. Today, MOS transistors on silicon dominate largely the semi-conductors market, however the diminution of transistors grid length is not enough to enhance the performances and respect Moore law. Particularly, for broadband telecommunications systems, where faster components are required. For this reason, alternative structures proposed like hetero structures IV-IV or III-V [1] have been.The most effective components in this area (High Electron Mobility Transistor: HEMT) on IIIV substrate. This work investigates an approach for contributing to the development of a numerical model based on physical and numerical modelling of the potential at heterostructure in AlGaAs/GaAs interface. We have developed calculation using projective methods allowed the Hamiltonian integration using Green functions in Schrodinger equation, for a rigorous resolution “self coherent” with Poisson equation. A simple analytical approach for charge-control in quantum well region of an AlGaAs/GaAs HEMT structure was presented. A charge-control equation, accounting for a variable average distance of the 2-DEG from the interface was introduced. Our approach which have aim to obtain ns-Vg characteristics is mainly based on: A new linear expression of Fermi-level variation with two-dimensional electron gas density in high electron mobility and also is mainly based on the notion of effective doping and a new expression of AEc

Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

NASA Astrophysics Data System (ADS)

Volkova, Anna; Ivantsov, Vladimir; Leung, Larry

2011-01-01

The employment of more than 10 μm thick AlN epilayers on SiC substrates for AlGaN/GaN high-electron-mobility transistors (HEMTs) substantially raises their performance in high-power energy-efficient amplifiers for 4G wireless mobile stations. In this paper, structural properties and surface morphology of thick AlN epilayers deposited by hydride vapor phase epitaxy (HVPE) on off-axis conductive 6H-SiC substrates are reported. The epilayers were examined in detail by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), Nomarski differential interference contrast (DIC), scanning electron microscopy (SEM), and selective wet chemical etching. At optimal substrate preparation and growth conditions, a full width at half-maximum (FWHM) of the XRD rocking curve (RC) for the symmetric (00.2) reflex was very close to that of the substrate (less than 40 arcsec) suggesting low screw dislocation density in the epilayer (˜10 6 cm -2) and small in-plane tilt misorientation. Reciprocal space mapping around asymmetric reflexes and measured lattice parameters indicated a fully relaxed state of the epilayers. The unit-cell-high stepped areas of the epilayers with 0.5 nm root mean square (RMS) roughness over 1×1 μm 2 scan were alternated with step-bunching instabilities up to 350 nm in height. Low warp of the substrates makes them suitable for precise epitaxy of HEMT structures.

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

NASA Technical Reports Server (NTRS)

Young, Paul G.; Romanofsky, Robert R.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.

Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

2017-12-01

This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al 0.3Ga 0.7N/GaN HEMTs

DOE PAGES

Khachatrian, Ani; Roche, Nicolas J. -H.; Buchner, Stephen P.; ...

2016-12-19

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al 0.3Ga 0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTsmore » are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.« less

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

NASA Technical Reports Server (NTRS)

Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd;

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

NASA Technical Reports Server (NTRS)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers

NASA Technical Reports Server (NTRS)

Zmuidzinas, J.

2004-01-01

This is the final technical report for NASA grant NAG5-9493. entitled "Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers". The goal of this project was to develop and demonstrate a new generation of superconducting tunnel junction (SIS) receivers with extremely wide instantaneous (intermediate-frequency, or IF) bandwidths. of order 12 GHz. along with the wideband low-noise microwave HEMT (high electron mobility transistor) amplifiers which follow the SIS mixer. These wideband SIS/HEMT receivers would allow rapid submillimeter wavelength spectral line surveys to be carried out, for instance with the NASA airborne observatory SOFIA. and could potentially be useful for future submillimeter space missions such as SAFIR. In addition, there are potential NASA earth science applications. such as the monitoring of the distribution of chemical species in the stratosphere and troposphere using the limb-sounding technique. The overall goals of this project have been achieved: a broadband 200-300 SIS receiver was designed and constructed, and was demonstrated in the field through a test run at the Caltech Submillimeter Observatory on Mauna Kea. HI. The technical details are described in the appendices. which are primarily conference publications. but Appendix A also includes an unpublished summary of the latest results. The work on the SIS mixer design are described in the conference publications (appendices B and C). The "Supermix" software package that was developed at Caltech and used for the SIS design is also described in two conference papers, but has been substantially revised, debugged. and extended as part of the work completed for this grant. The Supermix package is made available to the community at no charge. The electromagnetic design of a radial waveguide probe similar to the one used in this work is described in a journal publication. Details of the novel fabrication procedure used for producing the SIS devices at JPL are also given in an upcoming journal article. Finally, details on the wideband HEMT amplifier design and noise characterization techniques are described in two publications.

Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

DTIC Science & Technology

2017-10-01

showing double the power of a single 1.2-mm HEMT with 55% PAE at a comparable gain compression level. 3. Summary and Conclusion A preliminary design of...combined, 2.4-mm HEMT power amplifier should achieve comparable performance based on a preliminary design using ideal, lossless matching elements. For...ARL-TR-8180 ● OCT 2017 US Army Research Laboratory Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs by

A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

DTIC Science & Technology

2015-07-01

presented, for the first time, artificial bee colony algorithm is applied to the global-optimization based parameter extraction and a novel intrinsic...conservation of the gate charge is well satisfied which further validates this novel extraction method. Index Terms —InGaAs/GaN pHEMTs, artificial bee ...increase the uniqueness of the extraction. Artificial bee colony (ABC) algorithm is adopted as the optimizer due to its excellent ability to escape

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.; Gang, Guan-Wan; He, J. Q.; Ichitsubo, I.

1988-05-01

This final technical report presents results on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. New results include analytical and computer aided device models of GaAs MESFETs and HEMTs or MODFETs, new synthesis techniques for monolithic feedback and distributed amplifiers and a new nonlinear CAD program for MIMIC called CADNON. This program incorporates the new MESFET and HEMT model and has been successfully applied to the design of monolithic millimeter-wave mixers.

Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Oda, Yasuhiko; Onomitsu, Koji; Kometani, Reo; Warisawa, Shin-ichi; Ishihara, Sunao; Yamaguchi, Hiroshi

2011-06-01

We developed a highly sensitive displacement detection scheme for a GaAs-based electromechanical resonator using an integrated high electron mobility transistor (HEMT). Piezoelectric voltage generated by the vibration of the resonator is applied to the gate of the HEMT, resulting in the on-chip amplification of the signal voltage. This detection scheme achieves a displacement sensitivity of ˜9 pm·Hz-1/2, which is one of the highest among on-chip purely electrical displacement detection schemes at room temperature.

Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.

Pyroelectric A1GaN/GaN HEMTs for ion-, gas- and Polar-Liquid Sensors

DTIC Science & Technology

2004-08-17

including the manipulation of pico- and nanofluid volumes on chemical or structural modified surfaces and defining suitable interfaces to the macroworld. A... nanofluidic dispensers based on piezo actuators, the micro periphery and the electronics for measuring biochemical assay systems (in vivo and in vitro...interface without the need of a modulation doped barrier. The carrier concentration and electron mobility within the 2DEG can be very high and build

Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

NASA Astrophysics Data System (ADS)

Hoshino, Tomoki; Mori, Nobuya

2018-04-01

InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Tao; Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016; Xu, Ruimin

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectricmore » constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity showsmore » that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.« less

Improved modeling on the RF behavior of InAs/AlSb HEMTs

NASA Astrophysics Data System (ADS)

Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen

2015-12-01

The leakage current and the impact ionization effect causes a drawback for the performance of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this paper, the conventional HEMT small-signal model was enhanced to characterize the RF behavior for InAs/AlSb HEMTs. The additional gate leakage current induced by the impact ionization was modeled by adding two resistances RGh1 and RGh2 shunting the Cgs-Ri and Cgd-Rj branches, respectively, and the ionized-drain current was characterized by an additional resistance Rmi parallel with the output resistance Rds, meanwhile the influence of the impact ionization on the transconductance was modeled by an additional current source gmi controlled by Vgs. The additional inductance, evaluated as a function of f(ω, R), was introduced to characterize the frequency dependency of impact ionization by using the impact ionization effective rate 1/τi and a new frequency response rate factor n, which guaranteed the enhanced model reliable for a wide frequency range. As a result, the enhanced model achieved good agreement with the measurements of the S-parameters and Y-parameters for a wide frequency range, moreover, the simulated results of the stability factor K, the cutoff frequency fT, the maximum frequency of oscillation fmax, and the unilateral Mason's gain U were estimated to approach the experimental results with a high degree.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

DOEpatents

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

NASA Astrophysics Data System (ADS)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

2018-04-01

In this paper, the detailed device characteristics were investigated both before and after the Si3N4 passivation grown by plasma-enhanced chemical vapor deposition (PECVD). Better transport properties have been observed for the passivated devices compared with the same ones before passivation. The strain variation and the influence of the scattering mechanisms were analyzed and studied. The calculated results show that the non-uniform distribution of the additional polarization charges at the AlGaN/AlN/GaN interfaces has been weakened by the deposition of the Si3N4 layer. The numerical rise of the two-dimensional electron gas (2DEG) electron mobility and the decrease of the measured R on- A values were in a good consistency, and the weakening of the polarization Coulomb field (PCF) scattering after the passivation process is considered to be the main cause of these phenomena.

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70more » μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.« less

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature.

Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

DTIC Science & Technology

2014-06-19

the AlGaN is unintentionally doped . Figure 2.3. AlGaN/GaN band diagram showing polarization charges. The band diagram in Figure 2.3 shows...intentionally doped as are MESFETS, and the channel gets its electrons from the unintentional doping . There is less Coulomb scattering in the...temperature measurements are often used to provide spatial PL maps of doping and trap densities. Laser excitation (quasi-monochromatic) is

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Simons, R. N.; Wojtczuk, S.

1987-01-01

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

NASA Technical Reports Server (NTRS)

Deal, W. R.; Din, S.; Padilla, J.; Radisic, V.; Mei, G.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Gaier, T.;

Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin temperature range.

PubMed

Korolev, A M; Shnyrkov, V I; Shulga, V M

2011-01-01

We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

PubMed

Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to demonstrate its viability, this technique is applicable to any solid-state material with a suitable Raman response and will likely enable new measurement capabilities in a wide variety of scientific and engineering applications.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to demonstrate its viability, this technique is applicable to any solid-state material with a suitable Raman response and will likely enable new measurement capabilities in a wide variety of scientific and engineering applications.

Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2017-02-01

In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

Sensitivity Enhancement of an Inductively Coupled Local Detector Using a HEMT-based Current Amplifier

PubMed Central

Qian, Chunqi; Duan, Qi; Dodd, Steve; Koretsky, Alan; Murphy-Boesch, Joe

2015-01-01

Purpose To improve the signal transmission efficiency and sensitivity of a local detection coil that is weakly inductively coupled to a larger receive coil. Methods The resonant detection coil is connected in parallel with the gate of a HEMT transistor without impedance matching. When the drain of the transistor is capacitively shunted to ground, current amplification occurs in the resonator by feedback that transforms a capacitive impedance on the transistor’s source to a negative resistance on its gate. Results High resolution images were obtained from a mouse brain using a small, 11 mm diameter surface coil that was inductively coupled to a commercial, phased array chest coil. Although the power consumption of the amplifier was only 88 µW, 14 dB gain was obtained with excellent noise performance. Conclusion An integrated current amplifier based on a High Electron Mobility Transistor (HEMT) can enhance the sensitivity of inductively coupled local detectors when weakly coupled. This amplifier enables efficient signal transmission between customized user coils and commercial clinical coils, without the need for a specialized signal interface. PMID:26192998

Update on Waveguide-Embedded Differential MMIC Amplifiers

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schleht, Erich

2010-01-01

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT

NASA Astrophysics Data System (ADS)

Hamaizia, Z.; Sengouga, N.; Yagoub, M. C. E.; Missous, M.

2012-02-01

This paper discusses the design of a wideband low noise amplifier (LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications. The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz. A common-drain in cascade with a common source inductive degeneration, broadband LNA topology is proposed for wideband applications. The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss (S11 < -10 dB, S22 < -11 dB). This LNA exhibits an input 1-dB compression point of -18 dBm, a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.

RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designs

NASA Astrophysics Data System (ADS)

Chiu, Hsien-Chin; Fu, Jeffrey S.; Chen, Chung-Wen

2009-02-01

AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (pHEMT) single-pole-single-throw (SPST) switches with various upper/lower δ-doped ratio designs were fabricated and investigated for the first time. Both off-state capacitance and the specific on-resistance ( Ron) of pHEMT are dominated factors and showed characteristics of sensitive to upper/lower δ-doped ratio for RF switch applications. By adopting the series-shunt architecture, upper/lower ratio of 3:1 switch achieved the lowest insertion loss compared to 4:1 design owing to the device shunt to ground (M2) of 4:1 design exhibited a worse fundamental signal isolation especially at high power level. As to the isolation under same architecture, however, due to the lowest Ron can be obtained, the 4:1 design provided better isolation performance. In addition, the M2 also dominated the second and third harmonics suppression and meanwhile, the lowest Ron of 4:1 design was found to be beneficial to the reduction of the harmonics power transmitted to the output terminal.

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

NASA Tech Briefs, February 2003

NASA Technical Reports Server (NTRS)

2003-01-01

opics covered include: Integrated Electrode Arrays for Neuro-Prosthetic Implants; Eroding Potentiometers; Common/Dependent-Pressure-Vessel Nickel-Hydrogen Batteries; 120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna; 80-GHz MMIC HEMT Voltage-Controlled Oscillator; High-Energy-Density Capacitors; Microscale Thermal-Transpiration Gas Pump; Instrument for Measuring Temperature of Water; Improved Measurement of Coherence in Presence of Instrument Noise; Compact Instruments Measure Helium-Leak Rates; Irreversible Entropy Production in Two-Phase Mixing Layers; Subsonic and Supersonic Effects in Bose-Einstein Condensate; Nanolaminate Mirrors With "Piston" Figure-Control Actuators; Mixed Conducting Electrodes for Better AMTEC Cells; Process for Encapsulating Protein Crystals; Lightweight, Self-Deployable Wheels; Grease-Resistant O Rings for Joints in Solid Rocket Motors; LabVIEW Serial Driver Software for an Electronic Load; Software Computes Tape-Casting Parameters; Software for Tracking Costs of Mars Projects; Software for Replicating Data Between X.500 and LDAP Directories; The Technical Work Plan Tracking Tool; Improved Multiple-DOF SAW Piezoelectric Motors; Propulsion Flight-Test Fixture; Mechanical Amplifier for a Piezoelectric Transducer; Swell Sleeves for Testing Explosive Devices; Linear Back-Drive Differentials; Miniature Inchworm Actuators Fabricated by Use of LIGA; Using ERF Devices to Control Deployments of Space Structures; High-Temperature Switched-Reluctance Electric Motor; System for Centering a Turbofan in a Nacelle During Tests; Fabricating Composite-Material Structures Containing SMA Ribbons; Optimal Feedback Control of Thermal Networks; Artifacts for Calibration of Submicron Width Measurements; Navigating a Mobile Robot Across Terrain Using Fuzzy Logic; Designing Facilities for Collaborative Operations; and Quantitating Iron in Serum Ferritin by Use of ICP-MS.

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Analysis of e-beam impact on the resist stack in e-beam lithography process

NASA Astrophysics Data System (ADS)

Indykeiwicz, K.; Paszkiewicz, B.

2013-07-01

Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.

2015-11-15

A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the inmore » situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.« less

Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization

NASA Astrophysics Data System (ADS)

Ian, Ka Wa; Zawawiand, Mohamad Adzhar Md; Missous, Mohamed

2014-03-01

This work described the fabrication and performances of strained channel In0.52Al0.47As/In0.7Ga0.3As/InP pHEMTs with thermally evaporated Pd/Ti/Au gate metallization. The electrical characteristics of these Pd-gate devices are studied to investigate the effects of changing the Pd metal thickness, annealing temperature and annealing time. Following annealing at 200 °C for 35 min, a 10 nm Pd-gate device displays a VTH of -0.25 V, which is significantly smaller compared to those with Ti/Au gate schemes showing VTH = -0.75 V. A 1 um gate length device exhibits an improved Gm of 580 mS mm-1 (from 500 mS mm-1), a high IDSmax of 400 mA mm-1 (from 330 mA mm-1) and good fT and fmax of 24.5 and 49 GHz commensurate with the 1 µm gate length. All these enhancements are attributed to the controllable gate sinking of Pd. The device shows no significant degradation even after annealing at 230 °C for more than 5 h, which implies that the reliability of these Pd-gate structures is excellent.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

NASA Astrophysics Data System (ADS)

Efthymiou, L.; Longobardi, G.; Camuso, G.; Chien, T.; Chen, M.; Udrea, F.

2017-03-01

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

4 Kelvin Cryogenic Characterization of Commercial pHEMT Transistors at 9 kHz to 8.5 GHz Range

NASA Astrophysics Data System (ADS)

Ibarra-Medel, E.; Velázquez, M.; Ventura, S.; Ferrusca, D.; Gómez-Rivera, V.

2016-07-01

Nowadays, the technology innovations in large format array detectors at low temperature for millimetric observational astronomy demand the development of electronics capable to keep their functionality at cryogenic temperatures. In kinetic inductance detectors, the first stage of electronics readout requires high-bandwidth low-noise amplifiers (LNAs). These devices are commonly fabricated in monolithic microwave integrated circuit (MMIC) processes which commercially achieve a noise temperature level of 5 K. An alternative approach to the MMIC are the hybrid microwave circuit which mixes RF lumped elements and discrete electronic components. This paper describes the characterization of six commercial pHEMT transistors tested at cryogenic temperatures. DC properties such as I-V curves and transconductance (g_m) were measured for each transistor; these measurements allow us to calculate the best bias point versus gain, with the lowest noise figure and power consumption within the range of 9 kHz to 8.5 GHz at the operating temperature of 4 K. Experimental results suggest that the characterized pHEMTs have a noise figure that allow them to be used in hybrid LNAs arranges with a comparable MMIC performance.

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

NASA Astrophysics Data System (ADS)

Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates

NASA Astrophysics Data System (ADS)

Chou, Yeong-Chang; Leung, Denise; Lai, Richard; Grundbacher, Ron; Scarpulla, John; Barsky, Mike; Nishimoto, Matt; Eng, David; Liu, Po-Hsin; Oki, Aaron; Streit, Dwight

2002-02-01

The high-reliability performance of K-band microwave monolithic integrated circuit (MMIC) amplifiers fabricated with 0.1 μm gate length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were lifetested at two-temperatures (T1=230°C, and T2=250°C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTTF) >1× 106 h at a 125°C of junction temperature. MTTF was determined by 2-temperature constant current stress using |Δ S21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 μm InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Schmitz, Adele

2009-01-01

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

NASA Astrophysics Data System (ADS)

Baykan, Mehmet Onur

Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width dependent strain response of tri-gate p-type FinFETs are experimentally extracted using a 4-point bending jig. It is found that the low-field piezoresistance coefficient of p-type FinFETs can be modeled by using a weighted conductance average of the top and sidewall bulk piezoresistance coefficients. Next, the strain enhancement of p-type ballistic silicon nanowire MOSFETs is studied using sp3d 5s* basis nearest-neighbor tight-binding simulations coupled with a semiclassical top-of-the-barrier transport model. Size and orientation dependent strain enhancement of ballistic hole transport is explained by the strain-induced modification of the 1D nanowire valence band density-of-states. Further insights are provided for future p-type high-performance silicon nanowire logic devices. A physics based investigation is conducted to understand the strain effects on surface roughness limited electron mobility in silicon inversion layers. Based on the evidence from electrical and material characterization, a strain-induced surface morphology change is hypothesized. To model the observed electrical characteristics, we have employed a self-consistent MOSFET mobility simulator coupled with an ad hoc strain-induced roughness modification. The strain induced surface morphology change is found to be consistent among electrical and materials characterization, as well as transport simulations. In order to bridge the gap between the drift-diffusion based models for long-channel devices and the quasi-ballistic models for nanoscale channels, a unified carrier transport model is developed using an updated one-flux theory. Including the high-field and carrier confinement effects, a surface-potential based analytical transmission expression is obtained for the entire MOSFET operation range. With the new channel transmission equation and average carrier drift velocity, a new expression for channel ballisticity is defined. Impact of mechanical strain on carrier transport for both nMOSFETs and pMOSFETs in both linear and saturation regimes is explained using the new channel transmission definitions. To understand the impact of mechanical strain on AlGaN/GaN HEMT trap generation, we have devised an experimental method to obtain the photon flux-normalized relative areal trap density distribution using photoionization spectroscopy technique. The details of the trap extraction method and the experimental setup are given. Using this setup, the trap characteristics are extracted for both ungated transmission line module (TLM) and gated HEMT devices from both Si and SiC substrates. The changes in the device trap characteristics are emphasized before and after electrical stressing. It is found through the step-voltage stressing of the AlGaN/GaN HEMT gate stack that the device degradation is due to the near bandgap trap generation, which are shown to be related to the structural defects in GaN.

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

NASA Astrophysics Data System (ADS)

Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

1998-05-01

InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khurgin, Jacob B., E-mail: jakek@jhu.edu; Bajaj, Sanyam; Rajan, Siddharth

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, themore » saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.« less

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatrian, Ani; Roche, Nicolas J. -H.; Buchner, Stephen P.

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al 0.3Ga 0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTsmore » are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.« less

Sensitivity Enhancement of an Inductively Coupled Local Detector Using a HEMT-Based Current Amplifier.

PubMed

Qian, Chunqi; Duan, Qi; Dodd, Steve; Koretsky, Alan; Murphy-Boesch, Joe

2016-06-01

To improve the signal transmission efficiency and sensitivity of a local detection coil that is weakly inductively coupled to a larger receive coil. The resonant detection coil is connected in parallel with the gate of a high electron mobility transistor (HEMT) transistor without impedance matching. When the drain of the transistor is capacitively shunted to ground, current amplification occurs in the resonator by feedback that transforms a capacitive impedance on the transistor's source to a negative resistance on its gate. High resolution images were obtained from a mouse brain using a small, 11 mm diameter surface coil that was inductively coupled to a commercial, phased array chest coil. Although the power consumption of the amplifier was only 88 μW, 14 dB gain was obtained with excellent noise performance. An integrated current amplifier based on a HEMT can enhance the sensitivity of inductively coupled local detectors when weakly coupled. This amplifier enables efficient signal transmission between customized user coils and commercial clinical coils, without the need for a specialized signal interface. Magn Reson Med 75:2573-2578, 2016. Published 2015. This article is a U.S. Government work and is in the public domain in the USA. Published 2015 This article is a U.S. Government work and is in the public domain in the USA.

Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

NASA Astrophysics Data System (ADS)

Liu, Hui; Zhang, Zongjing; Luo, Weijun

2018-06-01

The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR <- 3.5 V), both of the two samples show good agreement with the surface leakage mechanism. The leakage current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

Extended behavioural modelling of FET and lattice-mismatched HEMT devices

NASA Astrophysics Data System (ADS)

Khawam, Yahya; Albasha, Lutfi

2017-07-01

This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

NASA Astrophysics Data System (ADS)

Meneghesso, G.; Meneghini, M.; Rossetto, I.; Canato, E.; Bartholomeus, J.; De Santi, C.; Trivellin, N.; Zanoni, E.

2017-02-01

GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase. For this reason, studying the stability and reliability of these devices under high stress conditions is of high importance. This paper reports on our most recent results on the field- and time-dependent degradation of GaN-HEMTs with p-GaN gate submitted to stress with positive gate bias. Based on combined step-stress experiments, constant voltage stress and electroluminescence testing we demonstrated that: (i) when submitted to high/positive gate stress, the transistors may show a negative threshold voltage shift, that is ascribed to the injection of holes from the gate metal towards the p-GaN/AlGaN interface; (ii) in a step-stress experiment, the analyzed commercial devices fail at gate voltages higher than 9-10 V, due to the extremely high electric field over the p-GaN/AlGaN stack; (iii) constant voltage stress tests indicate that the failure is also time-dependent and Weibull distributed. The several processes that can explain the time-dependent failure are discussed in the following.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

670-GHz Down- and Up-Converting HEMT-Based Mixers

NASA Technical Reports Server (NTRS)

Schlecht, Enrich T.; Chattopadhyay, Goutam; Lin, Robert H.; Sin, Seth; Deal, William; Rodriquez, Bryan; Bayuk, Brian; Leong, Kevin; Mei, Gerry

2012-01-01

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Chang; Liao, XueYang; Li, RuGuan

2015-09-28

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore » on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.« less

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Reck, Theodore and; Schlecht, Erich; Lin, Robert; Deal, William

2012-01-01

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Nature of size effects in compact models of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torkhov, N. A., E-mail: trkf@mail.ru; Scientific-Research Institute of Semiconductor Devices, Tomsk 634050; Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050

Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of themore » equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.« less

Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors

NASA Astrophysics Data System (ADS)

Melby, Jacob H.

AlGaN/GaN high electron mobility transistors (HEMT) and AlGaN/GaN diodes have promise for use as hydrogen and hydrocarbon sensors for a variety of industrial, military, and commercial applications. These semiconductor-based sensors have a number of advantages over other sensor technologies, such as the ability to operate at high temperatures, in corrosive environments, or under ionizing radiation. The high sensitivity of these devices to hydrogen-containing gases is associated with polarization differences within the AlGaN/GaN heterostructure that give rise to the formation of a two-dimensional electron gas (2DEG); exposure of the device to hydrogen changes the density of the 2DEG, which can be detected in a HEMT or diode structure. Although sensitivity to a range of gases has been reported, the factors that influence the behavior of the sensors are not well studied. The overarching goals of the research that follows were to determine how gas exposure conditions affect sensor behavior, to characterize and model the relationship between the electrical response of the sensors and the external gaseous environment, and to investigate the effects of using different metal catalysts on sensor behavior. The heterostructures used in this work were grown via metalorganic vapor phase epitaxy (MOVPE). Schottky diode and transistor devices employing platinum-group (Pd, Pt, Rh, Ir, Ru, and Os) catalysts were fabricated to allow electrical sensitivity in the presence of hydrogen and hydrogen containing gases. The generation of atomic hydrogen on the catalyst surface results in the rapid formation of hydrogen dipoles at the metal-semiconductor interface, which produces a measurable electronic response. The electrical response of Pt-gated HEMT-based sensors were measured in a flowing gaseous stream consisting of hydrogen in a pure nitrogen diluent at ambient and elevated temperatures. The transistors exhibited excellent transfer characteristics for temperatures ranging from 25°C to 125°C. The absolute current change was measured as a function of hydrogen concentration and compared with simulated curves based on the Langmuir isotherm and four other modified isotherms at a sensor temperature of 125°C. The sensor response was found to monotonically increase for a wide range of hydrogen concentrations (500 ppb to 5 vol%). It was found that the Langmuir isotherm, which treats all hydrogen binding sites as equivalent, was inadequate to describe the sensor response. A simple two-state model involving two distinct hydrogen binding states that have previously been observed in surface studies was found to adequately describe the response of these sensors from 500 ppb to 5 vol% hydrogen in nitrogen. Other modified Langmuir models were also analyzed and compared with the two-state model. While the models based on modified isotherms all yielded good fits to the data, the simpler two-state model (based upon a weakly bound and strongly bound hydrogen atom) and the Sips model (with distribution of states skewed towards higher binding energies) more closely match results from surface studies of dissociative desorption of hydrogen on Pt. Either of these models should therefore serve as a reasonable foundation for understanding and modeling the response of AlGaN/GaN-based hydrogen sensors with Pt catalysts. The electrical response of a Pt-gated HEMT-based sensor was also measured in a flowing gaseous stream consisting of hydrogen in air at elevated temperatures. The sensor response was found to monotonically increase for a narrow range of hydrogen pressures (1000 ppm to 4 vol%). Oxygen is found to decrease sensor response magnitude and increase the sensor response time. A modified Langmuir isotherm was found to adequately describe the influence of oxygen on a Pt-gated HEMT-based sensor under a narrow range of conditions. Additional sensor measurements were conducted on AlGaN/GaN diode sensors employing a variety of platinum-group catalysts. The influence of oxygen on the sensor response was found to be highly dependent upon the chemistry of hydrogen-oxygen interaction on the catalyst interface. A sensor diode array was fabricated using a ternary Pdx CuyAu1-x-y composition spread alloy catalyst and tested in a flowing gaseous stream consisting of pure hydrogen in nitrogen at room temperature. The resulting diode sensitivity was mapped as a function of composition and revealed intriguing hot spots of hydrogen sensitivity. Numerous technological challenges prevented further exploration of the ternary alloy spread; however, the preliminary results of this structure suggest that a reduction in hydrogen binding energy on the surface can result in a substantial increase in hydrogen dipoles at the metal semiconductor interface. Sensitivity to methane and ethylene was demonstrated using AlGaN/GaN-based sensors. Detection of methane and ethylene require elevated temperatures to break the C-H bond and produce atomic hydrogen. The sensor response is significantly more complicated than hydrogen and not always well-behaved with respect to temperature and time. XPS measurements conducted at CMU indicate a buildup of carbon on the platinum surface upon hydrocarbon exposure, trending toward a saturated carbon content. Lastly, operation of a diode sensor was examined in-situ under high hydrostatic pressure (2000psi) in both pure water and helium. Numerous stability issues were addressed in the course of these experiments. The steady-state influence of hydrostatic pressures on the diode sensor was found to be negligible in the absence of hydrogen. Hydrogen sensitivity was demonstrated in pure water with a hydrogen overpressure for devices employing an epoxy membrane. The same diode device failed to detect a large methane overpressure in water at room temperature and water at 80°C.

A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

NASA Technical Reports Server (NTRS)

Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

2014-01-01

This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

Molecular Dynamic Simulation of Space and Earth-Grown Crystal Structures of Thermostable T1 Lipase Geobacillus zalihae Revealed a Better Structure.

PubMed

Ishak, Siti Nor Hasmah; Aris, Sayangku Nor Ariati Mohamad; Halim, Khairul Bariyyah Abd; Ali, Mohd Shukuri Mohamad; Leow, Thean Chor; Kamarudin, Nor Hafizah Ahmad; Masomian, Malihe; Rahman, Raja Noor Zaliha Raja Abd

2017-09-25

Less sedimentation and convection in a microgravity environment has become a well-suited condition for growing high quality protein crystals. Thermostable T1 lipase derived from bacterium Geobacillus zalihae has been crystallized using the counter diffusion method under space and earth conditions. Preliminary study using YASARA molecular modeling structure program for both structures showed differences in number of hydrogen bond, ionic interaction, and conformation. The space-grown crystal structure contains more hydrogen bonds as compared with the earth-grown crystal structure. A molecular dynamics simulation study was used to provide insight on the fluctuations and conformational changes of both T1 lipase structures. The analysis of root mean square deviation (RMSD), radius of gyration, and root mean square fluctuation (RMSF) showed that space-grown structure is more stable than the earth-grown structure. Space-structure also showed more hydrogen bonds and ion interactions compared to the earth-grown structure. Further analysis also revealed that the space-grown structure has long-lived interactions, hence it is considered as the more stable structure. This study provides the conformational dynamics of T1 lipase crystal structure grown in space and earth condition.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

NASA Astrophysics Data System (ADS)

Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

2016-09-01

In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

Electronic Biosensors Based on III-Nitride Semiconductors.

PubMed

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1989-05-01

The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.

Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

NASA Astrophysics Data System (ADS)

Sharma, Chandan; Laishram, Robert; Amit, Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

2017-08-01

This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

PubMed

Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

2018-01-01

Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

Wide-bandwidth high-resolution search for extraterrestrial intelligence

NASA Technical Reports Server (NTRS)

Horowitz, Paul

1992-01-01

Research accomplished in the following areas is discussed: the antenna configuration; HEMT low-noise amplifiers; the downconverter; the Fast Fourier Transform Array; the backend array; and the backend and workstation.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Physical mechanisms affecting hot carrier-induced degradation in gallium nitride HEMTs

NASA Astrophysics Data System (ADS)

Mukherjee, Shubhajit

Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to excellent high-power as well as high-frequency performance. Even though the performance figures are outstanding, GaN-based HEMTs are not as mature as some competing technologies, which means that establishing the reliability of the technology is important to enable use in critical applications. The objective of this research is to understand the physical mechanisms affecting the reliability of GaN HEMTs at moderate drain biases (typically VDS < 30 V in the devices considered here). The degradation in device performance is believed to be due to the formation or modification of charged defects near the interface by hydrogen depassivation processes (due to electron-activated hydrogen removal) from energetic carriers. A rate-equation describing the defect generation process is formulated based on this assumption. A combination of ensemble Monte-Carlo (EMC) simulation statistics, ab-initio density functional theory (DFT) calculations, and accelerated stress experiments is used to relate the candidate defects to the overall degradation behavior (VT and gm). The focus of this work is on the 'semi-ON' mode of transistor operation in which the degradation is usually observed to be at its highest. This semi-ON state is reasonably close to the biasing region of class-AB high power amplifiers, which are popular because of the combination of high efficiency and low distortion that is associated with this configuration. The carrier-energy distributions are obtained using an EMC simulator that was developed specifically for III-V HFETs. The rate equation is used to model the degradation at different operating conditions as well as longer stress times from the result of one short duration stress test, by utilizing the carrier-energy distribution obtained from EMC simulations for one baseline condition. This work also attempts to identify the spatial location of these defects, and how this impacts the V T shift and gm degradation of the devices.

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

NASA Astrophysics Data System (ADS)

Patrick, Erin; Law, Mark E.; Liu, Lu; Cuervo, Camilo Velez; Xi, Yuyin; Ren, Fan; Pearton, Stephen J.

2013-12-01

A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully explain the increased reliability observed experimentally. In short, the addition of negatively-charged traps in the GaN buffer layer does not significantly change the electric field at the gate edges at radiation fluence levels seen in this study. We propose that negative trapped charge at the nitride/AlGaN interface actually produces the virtual-gate effect that results in decreasing the magnitude of the electric field at the gate edges and thus the increase in critical voltage. Simulation results including nitride interface charge show significant changes in electric field profiles while the I-V device characteristics do not change.

Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

0.15 {mu}m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield v-band power MMICs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, R.; Biedenbender, M.; Lee, J.

1995-12-31

The authors present a unique high yield, high performance 0.15 {mu}m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW`s GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output powermore » specification.« less

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies

NASA Astrophysics Data System (ADS)

Karisan, Yasir; Caglayan, Cosan; Sertel, Kubilay

2018-02-01

We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90-750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.

Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

2016-12-01

Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

Power-Amplifier Module for 145 to 165 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Peralta, Alejandro

2007-01-01

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mokerov, V. G., E-mail: vgmokerov@yandex.ru; Kuznetsov, A. L.; Fedorov, Yu. V.

2009-04-15

The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f{sub t}, the maximum oscillation frequency f{sub max}, and the power gain MSG/MAG and Mason's coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f{sub t} and f{submore » max} attain their maximum values of f{sub t} = 48 GHz and f{sub max} = 100 GHz at L{sub g} = 170 nm and W{sub g} = 100 {mu}m. The optimum values of W{sub g} and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al{sub 0.27}Ga{sub 0.73}N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz)« less

Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

2018-03-01

The effective mobility and reliability characteristics of In0.7Ga0.3As quantum-well (QW) MOSFETs with various high-κ gate stacks and HEMTs with a Schottky gate under bias temperature instability (BTI) stress were investigated. The effective mobilities (μeff) of HEMTs, single-layer Al2O3, bilayer Al2O3 (0.6 nm)/HfO2 (2.0 nm), and Al2O3 (0.6 nm)/HfO2 (3.0 nm) were ˜9000, ˜6158, ˜4789, and ˜4447 cm2 V-1 s-1 at N inv = 1.5 × 1012/cm2, respectively. The maximum effective mobility of In0.7Ga0.3As channel MOSFETs was compared with that of In0.7Ga0.3As/In0.48Al0.52As HEMTs, which are interface and border trap-free FETs. The results showed that the effective channel mobility was sensitive to traps in high-κ dielectrics related to interface trap density and border traps in the oxide. The ΔV T degradation of the bilayer Al2O3/HfO2 under BTI stress was greater than that of a single Al2O3 layer because the HfO2 layer had a high density of oxygen vacancies which were related to border traps.

W-band InP based HEMT MMIC low noise amplifiers

NASA Technical Reports Server (NTRS)

Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

2002-01-01

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

77 FR 3386 - Export and Reexport License Requirements for Certain Microwave and Millimeter Wave Electronic...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-24

... electronic components. The two components are packaged high electron mobility transistors and packaged..., 2012, FR Doc. 2012- 135). The two components are packaged high electron mobility transistors (HEMT) and...

Wide-bandwidth high-resolution search for extraterrestrial intelligence

NASA Technical Reports Server (NTRS)

Horowitz, Paul

1993-01-01

Research accomplished during the third 6-month period is summarized. Research covered the following: dual-horn antenna performance; high electron mobility transistors (HEMT) low-noise amplifiers; downconverters; fast Fourier transform (FFT) array; and backend 'feature recognizer' array.

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

NASA Astrophysics Data System (ADS)

Tiwat, Pongthavornkamol; Lei, Pang; Xinhua, Wang; Sen, Huang; Guoguo, Liu; Tingting, Yuan; Xinyu, Liu

2015-07-01

An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented. Project supported by the National Natural Science Foundation of China (No. 61204086).

X-band inverse class-F GaN internally-matched power amplifier

NASA Astrophysics Data System (ADS)

Zhao, Bo-Chao; Lu, Yang; Han, Wen-Zhe; Zheng, Jia-Xin; Zhang, Heng-Shuang; Ma, Pei-jun; Ma, Xiao-Hua; Hao, Yue

2016-09-01

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

NASA Astrophysics Data System (ADS)

Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

2017-11-01

In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

NASA Technical Reports Server (NTRS)

Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

1991-01-01

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

NASA Astrophysics Data System (ADS)

de la Broïse, Xavier; Lugiez, Francis; Bounab, Ayoub; Le Coguie, Alain

2015-07-01

High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/√Hz at 1 kHz.

High-Sensitivity GaN Microchemical Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

2009-01-01

Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

2003-03-01

Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm-2). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc2O3 layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc2O3-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria.

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Growth and Characterization of Wide Bandgap Semiconductor Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ghose, Susmita

Wide bandgap semiconductors are receiving extensive attention due to their exceptional physical and chemical properties making them useful for high efficiency and high power electronic devices. Comparing other conventional wide bandgap materials, monoclinic beta-Ga2O3 also represents an outstanding semiconductor oxide for next generation of UV optoelectronics and high temperature sensors due to its wide band gap ( 4.9eV). This new semiconductor material has higher breakdown voltage (8MV/cm) and n-type conductivity which make it more suitable for potential application as high power electronics. The properties and potential applications of these wide bandgap materials have not yet fully explored. In this study, the growth and characterization of single crystal beta-Ga2O3 thin films grown on c-plane sapphire (Al2O3) substrate using two different techniques; molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) techniques has been investigated. The influence of the growth parameters of MBE and PLD on crystalline quality and surface has been explored. Two methods have been used to grow Ga2O3 using MBE; one method is to use elemental Ga and the second is the use of a polycrystalline Ga2O3 compound source with and without an oxygen source. Using the elemental Ga source, growth rate of beta-Ga2O3 thin films was limited due to the formation and desorption of Ga2O molecules. In order to mitigate this problem, a compound Ga2O3 source has been introduced and used for the growth of crystalline beta-Ga2O 3 thin films without the need for additional oxygen since this source produces Ga-O molecules and additional oxygen. Two different alloys (InGa) 2O3 and (AlGa)2O3 has been grown on c-plane sapphire substrate by pulsed laser deposition technique to tune the bandgap of the oxide thin films from 3.5-8.6 eV suitable for applications such as wavelength-tunable optical devices, solid-state lighting and high electron mobility transistors (HEMTs). The crystallinity, chemical bonding, surface morphology and optical properties have been systematically evaluated by a number of in-situ and ex-situ techniques. The crystalline Ga2O 3 films showed pure phase of (2¯01) plane orientation and in-plane XRD phi-scan exhibited the six-fold rotational symmetry for beta-Ga 2O3 when grown on sapphire substrate. The alloys exhibit different phases has been stabilized depending on the compositions. Finally, a metal-semiconductor-metal (MSM) structure deep-ultraviolet (DUV) photodetector has been fabricated on beta-Ga2O3 film grown with an optimized growth condition has been demonstrated. This photodetector exhibited high resistance as well as small dark current with expected photoresponse for 254 nm UV light irradiation suggesting beta-Ga2O3 thin films as a potential candidate for deep-UV photodetectors. While the grown Ga2O3 shows high resistivity, the electrical properties of (In0.6Ga0.4)2O3 and (In 0.8Ga0.2)2O3 alloys show low resistivity with a high carrier concentration and increasing mobility with In content.

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

PubMed Central

Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi

2017-01-01

Abstract Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (σ), and low thermal conductivity (κ). State‐of‐the‐art nanostructuring techniques that significantly reduce κ have realized high‐performance thermoelectric materials with a figure of merit (ZT = S 2∙σ∙T∙κ−1) between 1.5 and 2. Although the power factor (PF = S 2∙σ) must also be enhanced to further improve ZT, the maximum PF remains near 1.5–4 mW m−1 K−2 due to the well‐known trade‐off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS‐HEMT simultaneously modulates S and σ of the high‐mobility electron gas from −490 µV K−1 and ≈10−1 S cm−1 to −90 µV K−1 and ≈104 S cm−1, while maintaining a high carrier mobility (≈1500 cm2 V−1 s−1). The maximized PF of the high‐mobility electron gas is ≈9 mW m−1 K−2, which is a two‐ to sixfold increase compared to state‐of‐the‐art practical thermoelectric materials. PMID:29375980

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

NASA Astrophysics Data System (ADS)

Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

2009-03-01

In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results obtained using the proposed analytical scheme has been compared with simulated and experimental results, to prove the validity of our model.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

PubMed

Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

2018-04-24

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

Cryogenic, X-band and Ka-band InP HEMT based LNAs for the Deep Space Network

NASA Technical Reports Server (NTRS)

Bautista, J. J.; Bowen, J. G.; Fernandez, J. E.; Fujiwara, B.; Loreman, J.; Petty, S.; Prater, J. L.

2000-01-01

This paper presents an overview of this development process with emphasis on comparison between modeled and measured, LNA modules, front-end receiver packages employing these modules, and antennae employing these packages.

Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

2017-06-01

Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications

NASA Astrophysics Data System (ADS)

Feng, Ting

Today, GaAs based field effect transistors (FETs) have been used in a broad range of high-speed electronic military and commercial applications. However, their reliability still needs to be improved. Particularly the hydrogen induced degradation is a large remaining issue in the reliability of GaAs FETs, because hydrogen can easily be incorporated into devices during the crystal growth and virtually every device processing step. The main objective of this research work is to develop a new gate metallization system in order to reduce the hydrogen induced degradation from the gate region for GaAs based MESFETs and HEMTs. Cu/Ti gate metallization has been introduced into the GaAs MESFETs and HEMTs in our work in order to solve the hydrogen problem. The purpose of the use of copper is to tie up the hydrogen atoms and prevent hydrogen penetration into the device active region as well as to keep a low gate resistance for low noise applications. In this work, the fabrication technology of GaAs MESFETs and AlGaAs/GaAs HEMTs with Cu/Ti metallized gates have been successfully developed and the fabricated Cu/Ti FETs have shown comparable DC performance with similar Au-based GaAs FETs. The Cu/Ti FETs were subjected to temperature accelerated testing at NOT under 5% hydrogen forming gas and the experimental results show the hydrogen induced degradation has been reduced for the Cu/Ti FETs compared to commonly used AuPtTi based GaAs FETs. A long-term reliability testing for Cu/Ti FETs has also been carried out at 200°C and up to 1000hours and testing results show Cu/Ti FETs performed with adequate reliability. The failure modes were found to consist of a decrease in drain saturation current and pinch-off voltage and an increase in source ohmic contact resistance. Material characterization tools including Rutherford backscattering spectroscopy and a back etching technique were used in Cu/Ti GaAs FETs, and pronounced gate metal copper in-diffusion and intermixing compounds at the interface between the gate and GaAs channel layer were found. A quantifying gate sinking degradation model was developed in order to extend device physics models to reliability testing results of Cu/Ti GaAs FETs. The gate sinking degradation model includes the gate metal and hydrogen in-diffusion effect, decrease of effective channel due to the formation of interfacial compounds, decrease of electron mobility due to the increase of in-diffused impurities, and donor compensation from in-diffused metal impurity acceptors or hydrogen passivation. A variational charge control model was applied to simulate and understand the degradation mechanisms of Cu/Ti HEMTs, including hydrogen induced degradation due to the neutralization of donors. The degradation model established in this study is also applicable to other Au or Al metallized GaAs FETs for understanding the failure mechanisms induced by gate sinking and hydrogen neutralization of donors and con-elating the device physics model with reliability testing results.

Frequency-domain cascading microwave superconducting quantum interference device multiplexers; beyond limitations originating from room-temperature electronics

NASA Astrophysics Data System (ADS)

Kohjiro, Satoshi; Hirayama, Fuminori

2018-07-01

A novel approach, frequency-domain cascading microwave multiplexers (MW-Mux), has been proposed and its basic operation has been demonstrated to increase the number of pixels multiplexed in a readout line U of MW-Mux for superconducting detector arrays. This method is an alternative to the challenging development of wideband, large power, and spurious-free room-temperature (300 K) electronics. The readout system for U pixels consists of four main parts: (1) multiplexer chips connected in series those contain U superconducting resonators in total. (2) A cryogenic high-electron-mobility transistor amplifier (HEMT). (3) A 300 K microwave frequency comb generator based on N(≡U/M) parallel units of digital-to-analog converters (DAC). (4) N parallel units of 300 K analog-to-digital converters (ADC). Here, M is the number of tones each DAC produces and each ADC handles. The output signal of U detectors multiplexed at the cryogenic stage is transmitted through a cable to the room temperature and divided into N processors where each handles M pixels. Due to the reduction factor of 1/N, U is not anymore dominated by the 300 K electronics but can be increased up to the potential value determined by either the bandwidth or the spurious-free power of the HEMT. Based on experimental results on the prototype system with N = 2 and M = 3, neither excess inter-pixel crosstalk nor excess noise has been observed in comparison with conventional MW-Mux. This indicates that the frequency-domain cascading MW-Mux provides the full (100%) usage of the HEMT band by assigning N 300 K bands on the frequency axis without inter-band gaps.

Integrating mindfulness training in school health education to promote healthy behaviors in adolescents: Feasibility and preliminary effects on exercise and dietary habits.

PubMed

Salmoirago-Blotcher, Elena; Druker, Susan; Frisard, Christine; Dunsiger, Shira I; Crawford, Sybil; Meleo-Meyer, Florence; Bock, Beth; Pbert, Lori

2018-03-01

Whether mindfulness training (MT) could improve healthy behaviors is unknown. This study sought to determine feasibility and acceptability of integrating MT into school-based health education (primary outcomes) and to explore its possible effects on healthy behaviors (exploratory outcomes). Two high schools in Massachusetts (2014-2015) were randomized to health education plus MT (HE-MT) (one session/week for 8 weeks) or to health education plus attention control (HE-AC). Dietary habits (24-h dietary recalls) and moderate-to-vigorous physical activity (MVPA/7-day recalls) were assessed at baseline, end of treatment (EOT), and 6 months thereafter. Quantile regression and linear mixed models were used, respectively, to estimate effects on MVPA and dietary outcomes adjusting for confounders. We recruited 53 9th graders (30 HEM, 23 HEAC; average age 14.5, 60% white, 59% female). Retention was 100% (EOT) and 96% (6 months); attendance was 96% (both conditions), with moderate-to-high satisfaction ratings. Among students with higher MVPA at baseline, MVPA was higher in HE-MT vs. HE-AC at both EOT (median difference = 81 min/week, p  = 0.005) and at 6 months ( p  = 0.004). Among males, median MVPA was higher (median difference = 99 min/week) in HE-MT vs. HEAC at both EOT ( p  = 0.056) and at 6 months ( p  = 0.04). No differences were noted in dietary habits. In sum, integrating school-based MT into health education was feasible and acceptable and had promising effects on MVPA among male and more active adolescents. These findings suggest that MT may improve healthy behaviors in adolescents and deserve to be reproduced in larger, rigorous studies.

Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka P.; Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Lau, Judy M.; Sieth, Matthew M.; VanWinkle, Daniel; Tantawi, Sami

2011-01-01

HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Algan/Gan Hemt By Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

NASA Astrophysics Data System (ADS)

Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

2017-07-01

In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-06-01

In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Wang, Chun-Chi

2018-04-01

To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

Careers in STEM Begin with Elementary Student Interest in Mathematics

ERIC Educational Resources Information Center

Brimmer, Linda Ertrachter

2017-01-01

I investigated why math capable students are not entering science, technology, engineering, and math (STEM) careers. To research the problem, I explored how highly effective elementary math teachers (HEMT) create student interest in mathematics using the self- efficacy (SE) theory and information and communication technology (ICT). The purpose of…

The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

NASA Astrophysics Data System (ADS)

Yurjev, G. S.; Fainer, N. I.; Maximovskiy, E. A.; Kosinova, M. L.; Sheromov, M. A.; Rumyantsev, Yu. M.

1998-02-01

The structure of semiconductor and dielectric thin (100-300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station "Anomalous scattering" of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu 2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si 3N 4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-06-01

To study the substrate dependence of light emission characteristics of transverse-magnetic (TM)-polarized light emitted from BAlGaN/AlN quantum wells (QWs) grown on GaN and AlN substrates were investigated theoretically. It is found that the topmost valence subband for QW structures grown on AlN substrate, is heavy hole state (HH1) while that for QW structures grown on GaN substrate is crystal-field split off light hole state (CL1), irrespective of the boron content. Since TM-polarized light emission is associated with the light hole state, the TM-polarized emission peak of BAlGaN/AlN QW structures grown on GaN substrate is expected to be much larger than that of the QW structure grown on AlN substrate. Also, both QW structures show that the spontaneous emission peak of BAlGaN/AlN QW structures would be improved with the inclusion of the boron. However, it rapidly begins to decrease when the boron content exceeds a critical value.

Electrical and Thermal Analysis of Gallium Nitride HEMTs

DTIC Science & Technology

2009-06-01

devices are currently constructed with various substrates such as silicon-carbide (SiC) or sapphire. The current market availability and scientific...current with Vgs = +2V is around 0.2A while the knee of the curve begins around Vds = 4V . Figure 12 describes the device of Gm versus dsV . The

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;

Electronics Devices and Materials

DTIC Science & Technology

2008-03-17

Molecular -bea epitaxy MCNPX ............... Software code Misse6 ................. Satellite expected to carry ORMatE-I Misse7...patterning using electron beam lithography), spaces (class 1000 clean benches), and skills (appropriate mix of skilled technicians and professionals...34 Process samples for various projects such as Antimode Base High Electron Mobility Transistors ( HEMT ) and Double Heterojuction Bipolar Transistors

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

NASA Astrophysics Data System (ADS)

Wang, A.; Tadjer, M. J.; Calle, F.

2013-05-01

We investigated the impact of diamond heat spreading layers on the performance of AlGaN/GaN high-electron-mobility-transistors (HEMTs). A finite element method was used to simulate the thermal and electrical characteristics of the devices under dc and pulsed operation conditions. The results show that the device performance can be improved significantly by optimized heat spreading, an effect strongly dependent on the lateral thermal conductivity of the initial several micrometers of diamond deposition. Of crucial importance is the proximity of the diamond layer to the heat source, which makes this method advantageous over other thermal management procedures, especially for the device in pulsed operation. In this case, the self-heating effect can be suppressed, and it is not affected by either the substrate or its thermal boundary resistance at the GaN/substrate at wider pulses. The device with a 5 µm diamond layer can present 10.5% improvement of drain current, and the self-heating effect can be neglected for a 100 ns pulse width at 1 V gate and 20 V drain voltage.

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.; Mueller, Wolfgang

2008-01-01

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Demonstration of an RF front-end based on GaN HEMT technology

NASA Astrophysics Data System (ADS)

Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

2017-05-01

The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

THz instrumentation for the Herschel Space Observatory's heterodyne instrument for far infrared

NASA Astrophysics Data System (ADS)

Pearson, John C.; Mehdi, Imran; Ward, John S.; Maiwald, Frank W.; Ferber, Robert R.; LeDuc, Henry G.; Schlecht, Erich T.; Gill, John J.; Hatch, William A.; Kawamura, Jonathan H.; Stern, Jeffrey A.; Gaier, Todd C.; Samoska, Lorene A.; Weinreb, Sander; Bumble, Bruce; Pukala, David M.; Javadi, Hamid H.; Finamore, Bradley P.; Lin, Robert H.; Dengler, Robert J.; Velebir, James R.; Luong, Edward M.; Tsang, Raymond; Peralta, Alejandro; Wells, Mary; Chun, William; Zmuidzinas, Jonas; Karpov, Alexandre; Phillips, Thomas; Miller, David; Maestrini, Alain E.; Erickson, Neal; Swift, Gerald; Liao, K. T.; Paquette, Michael

2004-10-01

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480- 1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-band Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

A 94 GHz RF Electronics Subsystem for the CloudSat Cloud Profiling Radar

NASA Technical Reports Server (NTRS)

LaBelle, Remi C.; Girard, Ralph; Arbery, Graham

2003-01-01

The CloudSat spacecraft, scheduled for launch in 2004, will carry the 94 GHz Cloud Profiling Radar (CPR) instrument. The design, assembly and test of the flight Radio Frequency Electronics Subsystem (RFES) for this instrument has been completed and is presented here. The RFES consists of an Upconverter (which includes an Exciter and two Drive Amplifiers (DA's)), a Receiver, and a Transmitter Calibrator assembly. Some key performance parameters of the RFES are as follows: dual 100 mW pulse-modulated drive outputs at 94 GHz, overall Receiver noise figure < 5.0 dB, a highly stable W-band noise source to provide knowledge accuracy of Receiver gain of < 0.4 dB over the 2 year mission life, and a W-band peak power detector to monitor the transmitter output power to within 0.5 dB over life. Some recent monolithic microwave integrated circuit (MMIC) designs were utilized which implement the DA's in 0.1 micron GaAs high electron-mobility transistor (HEMT) technology and the Receiver low-noise amplifier (LNA) in 0.1 micron InP HEMT technology.

Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

2016-04-01

In strained high-electron-mobility transistors (HEMTs) with InAs as the channel, excess electrons and holes are generated in the drain region by impact ionization. In the source region, electrons are injected to recombine with accumulated holes by the Auger process. This causes the shift of the gate potential, V GS,shift, for HEMTs. For a system where electrons and holes coexist, we established a theory taking into account the nonparabolicity of the conduction band in the InAs channel. This theory enables us to rigorously determine not only the energy states and the concentration profiles for both carriers but also the V GS,shift due to an accumulation of holes. We have derived the Auger recombination theory which takes into account the Fermi-Dirac statistics and is applicable to an arbitrary shape of potential energy. The Auger recombination lifetime τA for InAs-PHEMTs was estimated as a function of the sheet hole concentration, p s, and τA was on the order of psec for p s exceeding 1012 cm-2.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

NASA Technical Reports Server (NTRS)

Pearson, J. C.; Mehdi, I.; Ward, J. S.; Maiwald, F.; Ferber, R. R.; Leduc, H. G.; Schlecht, E. T.; Gill, J. J.; Hatch, W. A.; Kawamura, J. H.;

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

NASA Astrophysics Data System (ADS)

Xian, Ji; Xiaodong, Zhang; Weihua, Kang; Zhili, Zhang; Jiahui, Zhou; Wenjun, Xu; Qi, Li; Gongli, Xiao; Zhijun, Yin; Yong, Cai; Baoshun, Zhang; Haiou, Li

2016-02-01

An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3 As/In0.6Ga0.4 As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/(V·s) and a sheet density of 3.5 × 1012 cm-2 at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 ω·mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 246 and 301 GHz, respectively. Project supported by the Key Laboratory of Nano-Devices and Applications, Nano-Fabrication Facility of SINANO, Chinese Academy of Sciences, the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Project (No. 9140C140101140C14069), and the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449, YJCXS201529).

Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations

NASA Astrophysics Data System (ADS)

Soligo, Riccardo

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.

Environmental stresses of field growth allow cinnamyl alcohol dehydrogenase-deficient Nicotiana attenuata plants to compensate for their structural deficiencies.

PubMed

Kaur, Harleen; Shaker, Kamel; Heinzel, Nicolas; Ralph, John; Gális, Ivan; Baldwin, Ian T

2012-08-01

The organized lignocellulosic assemblies of cell walls provide the structural integrity required for the large statures of terrestrial plants. Silencing two CINNAMYL ALCOHOL DEHYDROGENASE (CAD) genes in Nicotiana attenuata produced plants (ir-CAD) with thin, red-pigmented stems, low CAD and sinapyl alcohol dehydrogenase activity, low lignin contents, and rubbery, structurally unstable stems when grown in the glasshouse (GH). However, when planted into their native desert habitat, ir-CAD plants produced robust stems that survived wind storms as well as the wild-type plants. Despite efficient silencing of NaCAD transcripts and enzymatic activity, field-grown ir-CAD plants had delayed and restricted spread of red stem pigmentation, a color change reflecting blocked lignification by CAD silencing, and attained wild-type-comparable total lignin contents. The rubbery GH phenotype was largely restored when field-grown ir-CAD plants were protected from wind, herbivore attack, and ultraviolet B exposure and grown in restricted rooting volumes; conversely, it was lost when ir-CAD plants were experimentally exposed to wind, ultraviolet B, and grown in large pots in growth chambers. Transcript and liquid chromatography-electrospray ionization-time-of-flight analysis revealed that these environmental stresses enhanced the accumulation of various phenylpropanoids in stems of field-grown plants; gas chromatography-mass spectrometry and nuclear magnetic resonance analysis revealed that the lignin of field-grown ir-CAD plants had GH-grown comparable levels of sinapaldehyde and syringaldehyde cross-linked into their lignins. Additionally, field-grown ir-CAD plants had short, thick stems with normal xylem element traits, which collectively enabled field-grown ir-CAD plants to compensate for the structural deficiencies associated with CAD silencing. Environmental stresses play an essential role in regulating lignin biosynthesis in lignin-deficient plants.

Environmental Stresses of Field Growth Allow Cinnamyl Alcohol Dehydrogenase-Deficient Nicotiana attenuata Plants to Compensate for their Structural Deficiencies1[C][W][OA

PubMed Central

Kaur, Harleen; Shaker, Kamel; Heinzel, Nicolas; Ralph, John; Gális, Ivan; Baldwin, Ian T.

2012-01-01

The organized lignocellulosic assemblies of cell walls provide the structural integrity required for the large statures of terrestrial plants. Silencing two CINNAMYL ALCOHOL DEHYDROGENASE (CAD) genes in Nicotiana attenuata produced plants (ir-CAD) with thin, red-pigmented stems, low CAD and sinapyl alcohol dehydrogenase activity, low lignin contents, and rubbery, structurally unstable stems when grown in the glasshouse (GH). However, when planted into their native desert habitat, ir-CAD plants produced robust stems that survived wind storms as well as the wild-type plants. Despite efficient silencing of NaCAD transcripts and enzymatic activity, field-grown ir-CAD plants had delayed and restricted spread of red stem pigmentation, a color change reflecting blocked lignification by CAD silencing, and attained wild-type-comparable total lignin contents. The rubbery GH phenotype was largely restored when field-grown ir-CAD plants were protected from wind, herbivore attack, and ultraviolet B exposure and grown in restricted rooting volumes; conversely, it was lost when ir-CAD plants were experimentally exposed to wind, ultraviolet B, and grown in large pots in growth chambers. Transcript and liquid chromatography-electrospray ionization-time-of-flight analysis revealed that these environmental stresses enhanced the accumulation of various phenylpropanoids in stems of field-grown plants; gas chromatography-mass spectrometry and nuclear magnetic resonance analysis revealed that the lignin of field-grown ir-CAD plants had GH-grown comparable levels of sinapaldehyde and syringaldehyde cross-linked into their lignins. Additionally, field-grown ir-CAD plants had short, thick stems with normal xylem element traits, which collectively enabled field-grown ir-CAD plants to compensate for the structural deficiencies associated with CAD silencing. Environmental stresses play an essential role in regulating lignin biosynthesis in lignin-deficient plants. PMID:22645069

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

PubMed

Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2018-04-30

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint)

DTIC Science & Technology

2014-02-01

Applied Drain Voltage Ids Drain-to-Source current MPa Megapascals σxx x-Component of Stress INTRODUCTION Gallium nitride (GaN) based high electron...the thermodynamic model to obtain the current densities within a semiconductor device. In doing so, it is possible to determine the electric

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

NASA Astrophysics Data System (ADS)

Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

2017-02-01

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Structural, mechanical, electrical and optical properties of a new lithium boro phthalate NLO crystal synthesized by a slow evaporation method

NASA Astrophysics Data System (ADS)

Mohanraj, K.; Balasubramanian, D.; Jhansi, N.

2017-11-01

A new non-linear optical (NLO) single crystal of lithium boro phthalate (LiBP) was grown by slow solvent evaporation technique. The powder sample was subjected to powder X-ray diffraction (PXRD) to find its crystalline nature and the crystal structure of the grown crystal was determined using single crystal X-ray (SXRD) diffraction analysis. The Fourier Transform Infrared (FTIR) spectrum was recorded for grown crystal to identify the various functional groups present in the compound. The mechanical property of the LiBP single crystal was studied using Vickers microhardness tester. The dielectric constant and dielectric loss measurements were carried out for the grown crystal at various temperatures. The grown crystal was subjected to UV-Visible Spectral Studies to analyze the linear optical behavior of the grown crystal. The Kurtz-Perry Powder technique was employed to measure the Second Harmonic Generation efficiency of the grown crystal.

Method of photocatalytic nanotagging

DOEpatents

Shelnutt, John A [Tijeras, NM; Medforth, Craig J [Winters, CA; Song, Yujiang [Albuquerque, NM

2010-04-27

A nanotagged chemical structure comprising a chemical structure with an associated photocatalyst and a tagging nanoparticle (a nanotag) grown in proximity to the photocatalyst, and a method for making the nanotagged chemical structure. The nanoparticle is grown in proximity to the photocatalyst by using a photocatalytic reduction reaction.

Multiscale Modelling of Electronic and Thermal Transport : Thermoelectrics, Turbostratic 2D Materials and Diamond/c-BN HEMT

NASA Astrophysics Data System (ADS)

Narendra, Namita

Multiscale modelling has become necessary with the advent of low dimensional devices as well as use of heterostructures which necessitates atomistic treatment of the interfaces. Multiscale methodology is able to capture the quantum mechanical atomistic details while enabling the simulation of micro-scale structures at the same time. In this thesis, multiscale modelling has been applied to study transport in thermoelectrics, turbostratic 2D MoS2/WS 2 heterostructure and diamond/c-BN high mobility electron transistor (HEMT). The possibility of enhanced thermoelectric properties through nanostructuring is investigated theoretically in a p-type Bi2Te3/Sb 2Te3 heterostructure. A multi-scale modeling approach is adopted to account for the atomistic characteristics of the interface as well as the carrier/phonon transport properties in the larger scales. The calculations clearly illustrate the desired impact of carrier energy filtering at the potential barrier by locally boosting the power factor over a sizable distance in the well region. Further, the phonon transport analysis illustrates a considerable reduction in the thermal conductivity at the heterointerface. Both effects are expected to provide an effective means to engineer higher zT in this material system. Next, power factor enhancement through resonant doping is explored in Bi2Te3 based on a detailed first-principles study. Of the dopant atoms investigated, it is found that the formation of resonant states may be achieved with In, Po and Na, leading potentially to significant increase in the thermoelectric efficiency at room temperature. While doping with Po forms twin resonant state peaks in the valence and conduction bands, the incorporation of Na or In results in the resonant states close to the valence band edge. Further analysis reveals the origin of these resonant states. Transport calculations are also carried out to estimate the anticipated level of enhancement. Next, in-plane and cross-plane transport in turbostratic MoS2/WS 2 heterostructure is investigated. Since it is a major challenge in controlling the stacking orientation while growing these heterostructures, the electronic transport properties can experience a sizeable impact via misorientation. Small rotation angles lead to large unit cells with thousands of atoms necessiating an analytical tight binding approach. Tight binding model is developed for MoS2/WS2 heterostructure by fitting to DFT data which is extended to the turbostratic case. Cross-plane electronic transport is then analyzed by NEGF and Landauer formalism. It is found that in-plane transport remains largely unaffected, while inter-layer electrical resistance increases upto 10% for holes and 30% for electrons. Finally, diamond/c-BN HEMT is proposed. Diamond is a promising material for high-power electronic applications in both the dc and rf domains. However, the predicted advantages are yet to be realized due to a number of technical challenges. In particular, n-type devices have not been feasible due to the large ionization energies and low thermodynamic solubility limits of n-dopants. Motivated by the recent advances in nonequilibrium processing, we propose and theoretically examine a diamond/c-BN HEMT that can circumvent the critical limitations. A first-principles calculation suggests the desired type-I alignment at the heterojunction of these two nearly lattice matched semiconductors. The investigation also illustrates that a large sheet carrier density in excess of 5 x 1012 cm-2 can be induced in the undoped diamond channel by the gate bias. A subsequent analysis of a simple prototype design indicates that the proposed device can achieve large current drive (˜ 10 A/cm), low Ron (˜ 0.05 mO · cm2), and high f T (˜ 300 GHz) simultaneously.

Structural, spectral and birefringence studies of semiorganic nonlinear optical single crystal: Calcium5-sulfosalicylate

NASA Astrophysics Data System (ADS)

Shalini, D.; Kalainathan, S.; Ambika, V. Revathi; Hema, N.; Jayalakshmi, D.

2017-11-01

Semi-organic nonlinear optical crystal Calcium5-Sulfosalicylate (CA5SS) was grown by slow evaporation solution growth technique. The cell parameters and molecular structure of the grown crystal were studied by single crystal x-ray diffraction analysis. The presence of various functional groups of the grown crystal was confirmed using Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman) analysis. UV-Visible spectrum shows that CA5SS crystals have high transmittance in the range of 330-900 nm. The refractive index, birefringence and transient photoluminescence properties of the grown crystal were analyzed. The frequency doubling of the grown crystal (CA5SS) were studied and compared with that of KDP.

On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Fung, KingMan; Pukala, David M.; Kangaslahti, Pekka P.; Lai, Richard; Ferreira, Linda

2012-01-01

JPL has measured and calibrated a WR2.2 waveguide wafer probe from GGB Industries in order to allow for measurement of circuits in the 325-500 GHz range. Circuits were measured, and one of the circuits exhibited 10 dB of gain at 475 GHz. The MMIC circuit was fabricated at Northrop Grumman Corp. (NGC) as part of a NASA Innovative Partnerships Program, using NGC s 35-nm-gatelength InP HEMT process technology. The chip utilizes three stages of HEMT amplifiers, each having two gate fingers of 10 m in width. The circuits use grounded coplanar waveguide topology on a 50- m-thick substrate with through substrate vias. Broadband matching is achieved with coplanar waveguide transmission lines, on-chip capacitors, and open stubs. When tested with wafer probing, the chip exhibited 10 dB of gain at 475 GHz, with over 9 dB of gain from 445-490 GHz. Low-noise amplifiers in the 400-500 GHz range are useful for astrophysics receivers and earth science remote sensing instruments. In particular, molecular lines in the 400-500 GHz range include the CO 4-3 line at 460 GHz, and the CI fine structure line at 492 GHz. Future astrophysics heterodyne instruments could make use of high-gain, low-noise amplifiers such as the one described here. In addition, earth science remote sensing instruments could also make use of low-noise receivers with MMIC amplifier front ends. Present receiver technology typically employs mixers for frequency down-conversion in the 400-500 GHz band. Commercially available mixers have typical conversion loss in the range of 7-10 dB with noise figure of 1,000 K. A low-noise amplifier placed in front of such a mixer would have 10 dB of gain and lower noise figure, particularly if cooled to low temperature. Future work will involve measuring the noise figure of this amplifier.

Radio Telescope Focal Container for the Russian VLBI Network of New Generation

NASA Technical Reports Server (NTRS)

Ipatov, Alexander; Mardyshkin, Vyacheslav; Cherepanov, Andrey; Chernov, Vitaly; Diky, Dmitry; Khvostov, Evgeny; Yevstigneyev, Alexander

2010-01-01

This article considers the development of the structure of receivers for Russian radio telescopes. The development of these radio telescopes is undertaken within the project for creating a Russian small-antenna-based radio interferometer of new generation. It is shown that for small antennas (10. 12 meter) the principal unit, which provides the best SNR, is the so-called focal container placed at primary focus. It includes the primary feed, HEMT LNA, and cryogenic cooling system down to 20. K. A new multi-band feed based on traveling wave resonators is used. It has small dimensions, low weight, and allows working with circular polarizations. Thus it can be placed into focal container and cooled with the LNA. A sketch of the focal container, with traveling-wave-resonator feed, and calculations of the expected parameters of the multi-band receiver are presented.

Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Park, K. W.; Dasika, V. D.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

2012-06-01

We have used conductive atomic force microscopy to investigate the influence of growth temperature on local current flow in GaAs pn junctions with embedded ErAs nanoparticles grown by molecular beam epitaxy. Three sets of samples, one with 1 ML ErAs deposited at different growth temperatures and two grown at 530 °C and 575 °C with varying ErAs depositions, were characterized. Statistical analysis of local current images suggests that the structures grown at 575 °C have about 3 times thicker ErAs nanoparticles than structures grown at 530 °C, resulting in degradation of conductivity due to reduced ErAs coverage. These findings explain previous studies of macroscopic tunnel junctions.

Structural defects in GaN revealed by Transmission Electron Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liliental-Weber, Zuzanna

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Structural defects in GaN revealed by Transmission Electron Microscopy

DOE PAGES

Liliental-Weber, Zuzanna

2014-09-08

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 324

DTIC Science & Technology

1994-05-01

phototransmittance (PT) to study PM-HEMTs with different electron densities and found that the first derivative of the ab- sorption coefficient with...circle before striking the sample. Samples are normally sealed into bags of FEP Teflon I and suspended in the beam between strings of PFA Teflon. Prompt

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pomeroy, J. W., E-mail: James.Pomeroy@Bristol.ac.uk; Kuball, M.

2015-10-14

Solid immersion lenses (SILs) are shown to greatly enhance optical spatial resolution when measuring AlGaN/GaN High Electron Mobility Transistors (HEMTs), taking advantage of the high refractive index of the SiC substrates commonly used for these devices. Solid immersion lenses can be applied to techniques such as electroluminescence emission microscopy and Raman thermography, aiding the development device physics models. Focused ion beam milling is used to fabricate solid immersion lenses in SiC substrates with a numerical aperture of 1.3. A lateral spatial resolution of 300 nm is demonstrated at an emission wavelength of 700 nm, and an axial spatial resolution of 1.7 ± 0.3 μm atmore » a laser wavelength of 532 nm is demonstrated; this is an improvement of 2.5× and 5×, respectively, when compared with a conventional 0.5 numerical aperture objective lens without a SIL. These results highlight the benefit of applying the solid immersion lenses technique to the optical characterization of GaN HEMTs. Further improvements may be gained through aberration compensation and increasing the SIL numerical aperture.« less

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity.

PubMed

Chen, Yi-Ting; Sarangadharan, Indu; Sukesan, Revathi; Hseih, Ching-Yen; Lee, Geng-Yen; Chyi, Jen-Inn; Wang, Yu-Lin

2018-05-29

Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (-36 mV/log [Pb 2+ ]) surpassing the limit of ideal sensitivity (-29.58 mV/log [Pb 2+ ]) in a typical Nernst equation for lead ion. The largely improved sensitivity has tremendously reduced the detection limit (10 -10  M) for several orders of magnitude of lead ion concentration compared to typical ion-selective electrode (ISE) (10 -7  M). The high sensitivity was obtained by creating a strong filed between the gate electrode and the HEMT channel. Systematical investigation was done by measuring different design of the sensor and gate bias, indicating ultra-high sensitivity and ultra-low detection limit obtained only in sufficiently strong field. Theoretical study in the sensitivity consistently agrees with the experimental finding and predicts the maximum and minimum sensitivity. The detection limit of our sensor is comparable to that of Inductively-Coupled-Plasma Mass Spectrum (ICP-MS), which also has detection limit near 10 -10  M.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

NASA Astrophysics Data System (ADS)

De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

PubMed

De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm 2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Characterization of re-grown floc size and structure: effect of mixing conditions during floc growth, breakage and re-growth process.

PubMed

Nan, Jun; Wang, Zhenbei; Yao, Meng; Yang, Yueming; Zhang, Xiaofei

2016-12-01

The impact of mixing speed in three stages-before breakage, during breakage, and after breakage-on re-grown floc properties was investigated by using a non-intrusive optical sampling and digital image analysis technique, respectively. And then, on the basis of different influence extent of mixing speed during each stage on size and structure of re-grown flocs, coagulation performance with varying mixing speed was analyzed. The results indicated that the broken flocs could not re-grow to the size before breakage in all cases. Furthermore, increasing mixing intensity contributed to the re-formation of smaller flocs with higher degree of compactness. For slow mixing before breakage, an increase in mixing speed had less influence on re-grown floc properties due to the same breakage strength during breakage, resulting in inconspicuous variation of coagulation efficiency. For rapid mixing during breakage, larger mixing speed markedly decreased the coagulation efficiency. This could be attributed that mixing speed during breakage generated greater influence on re-grown floc size. However, as slow mixing after breakage was elevated, the coagulation efficiency presented significant rise, indicating that slow mixing after breakage had more influence on re-grown floc structure upon re-structuring and re-arrangement mechanism.

Structural and magnetic properties of hexagonal Cr1-δTe films grown on CdTe(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kanazawa, Ken; Yamawaki, Kazuma; Sekita, Naoya; Nishio, Yôtarô; Kuroda, Shinji; Mitome, Masanori; Bando, Yoshio

2015-04-01

We investigated the structural and magnetic properties of Cr1-δTe thin films grown on CdTe(001) layers by molecular beam epitaxy (MBE) with systematic variations of the ratio between Cr and Te fluxes and the substrate temperature Ts during the growth. Cr1-δTe of the hexagonal structure (hex-Cr1-δTe) was always formed irrespective of the growth conditions, but the growth orientation was different depending on the Cr/Te flux ratio and Ts. Hex-Cr1-δTe was grown in the [0001] axis in the range of small Cr/Te ratios and high Ts while it was also grown in the direction normal to the (1-102) plane at larger Cr/Te ratios or lower Ts. Hex-Cr1-δTe films grown in the both orientations show ferromagnetism, but they exhibit a clear contrast in the field dependence of perpendicular magnetization at 2 K; a square hysteretic loop in the film grown in the [0001] axis versus a round-shape loop in the film grown in the direction normal to the (1-102) plane. Moreover, the films grown in the [0001] axis at the smallest Cr/Te ratio show variations of ferromagnetic properties with Curie temperature (Tc) and the coercivity (Hc) varying according to the value of Ts.

Crystal growth, structure analysis and characterisation of 2 - (1, 3 - dioxoisoindolin - 2 - yl) acetic acid single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sankari, R. Siva, E-mail: sivasankari.sh@act.edu.in; Perumal, Rajesh Narayana

2014-04-24

Single crystal of dielectric material 2 - (1, 3 - dioxoisoindolin - 2 - yl) acetic acid has been grown by slow evaporation solution growth method. The grown crystal was harvested in 25 days. The crystal structure was analyzed by Single crystal X - ray diffraction. UV-vis-NIR analysis was performed to examine the optical property of the grown crystal. The thermal property of the grown crystal was studied by thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The dielectric measurements were carried out and the dielectric constant was calculated and plotted at all frequencies.

Comparative effectiveness of a clinostat and a slow-turning lateral vessel at mimicking the ultrastructural effects of microgravity in plant cells

NASA Technical Reports Server (NTRS)

Moore, R.

1990-01-01

The object of this research was to determine how effectively the actions of a clinostat and a fluid-filled, slow-turning lateral vessel (STLV) mimic the ultrastructural effects of microgravity in plant cells. We accomplished this by qualitatively and quantitatively comparing the ultrastructures of cells grown on clinostats and in an STLV with those of cells grown at 1 g and in microgravity aboard the Space Shuttle Columbia. Columella cells of Brassica perviridis seedlings grown in microgravity and in an STLV have similar structures. Both contain significantly more lipid bodies, less starch, and fewer dictyosomes than columella cells of seedlings grown at 1 g. Cells of seedlings grown on clinostats have significantly different ultrastructures from those grown in microgravity or in an STLV, indicating that clinostats do not mimic microgravity at the ultrastructural level. The similar structures of columella cells of seedlings grown in an STLV and in microgravity suggest that an STLV effectively mimics microgravity at the ultrastructural level.

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

NASA Technical Reports Server (NTRS)

Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.

1998-01-01

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Synthesis, crystal growth, structural, thermal, optical and mechanical properties of solution grown 4-methylpyridinium 4-hydroxybenzoate single crystal.

PubMed

Sudhahar, S; Krishna Kumar, M; Sornamurthy, B M; Mohan Kumar, R

2014-01-24

Organic nonlinear optical material, 4-methylpyridinium 4-hydroxybenzoate (4MPHB) was synthesized and single crystal was grown by slow evaporation solution growth method. Single crystal and powder X-ray diffraction analyses confirm the structure and crystalline perfection of 4MPHB crystal. Infrared, Raman and NMR spectroscopy techniques were used to elucidate the functional groups present in the compound. TG-DTA analysis was carried out in nitrogen atmosphere to study the decomposition stages, endothermic and exothermic reactions. UV-visible and Photoluminescence spectra were recorded for the grown crystal to estimate the transmittance and band gap energy respectively. Linear refractive index, birefringence, and SHG efficiency of the grown crystal were studied. Laser induced surface damage threshold and mechanical properties of grown crystal were studied to assess the suitability of the grown crystals for device applications. Copyright © 2013 Elsevier B.V. All rights reserved.

MMIC DHBT Common-Base Amplifier for 172 GHz

NASA Technical Reports Server (NTRS)

Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

2006-01-01

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off

NASA Astrophysics Data System (ADS)

Eldose, N. M.; Zhu, J.; Mavridi, N.; Prior, Kevin; Moug, R. T.

2018-05-01

Here we present stacking of GaAs/ZnSe/ZnCdSe single-quantum well (QW) structures using epitaxial lift-off (ELO). Molecular beam epitaxy (MBE)-grown II-VI QW structure was lifted using our standard ELO technique. The QW structures were transferred onto glass plates and then subsequent layers stacked on top of each other to form a triple-QW structure. This was compared to an MBE-grown multiple-QW (MQW) structure of similar design. Low-temperature (77 K) photoluminescence (PL) spectroscopy was used to compare the two structures and showed no obvious degradation of the ELO stacked layer. It was observed that by stacking the single QW layer on itself we could increase the PL emission intensity beyond that of the grown MQW structure while maintaining narrow line width.

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature.

PubMed

Feng, Jiagui; Wagner, Sean R; Zhang, Pengpeng

2015-06-18

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the (√3 x √3) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown (√3 x √3) phase is identical to that of the (√3 x √3)R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

NASA Astrophysics Data System (ADS)

Sun, Shu-Xiang; Wei, Zhi-Chao; Xia, Peng-Hui; Wang, Wen-Bin; Duan, Zhi-Yong; Li, Yu-Xiao; Zhong, Ying-Hui; Ding, Peng; Jin, Zhi

2018-02-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004).

Quantum Key Distribution Using Polarized Single Photons

DTIC Science & Technology

2009-04-01

liquid helium the SSPD with a low - noise , cryogenic high-electron-mobility transistor (HEMT) with high-input impedance. This arrangement allowed us...Sobolewski, IEEE Trans. Appl. Supercon., accepted (2009). 19. " Measurements of amplitude distributions of dark counts and photon counts in NbN ...75, 174507 (2007). 6. "Fiber-Coupled NbN Superconducting Single-Photon Detectors for Quantum Correlation Measurements ," W. Slysz, M. Wegrzecki, J

Structural, optical and photoelectric properties of sprayed CdS thin films

NASA Astrophysics Data System (ADS)

Chandel, Tarun; Dwivedi, Shailendra Kumar; Zaman, M. Burhanuz; Rajaram, P.

2018-05-01

In this study, CdS thin films were grown via a facile spray pyrolysis technique. The crystalline phase, morphological, compositional and optical properties of the CdS thin films have been studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and UV-vis absorption spectroscopy, respectively. XRD patterns show that the grown CdS films crystallized in the hexagonal structure. Scanning electron microscopy (SEM) study shows that the surfaces of the films are smooth and are uniformly covered with nanoparticles. EDAX results reveal that the grown films have good stochiometry. UV-vis spectroscopy shows that the grown films have transparency above 80% over the entire visible region. The photo-electric response of the CdS films grown on glass substrates has been observed.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-02-01

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002).

Characterization of ultrafast devices using novel optical techniques

NASA Astrophysics Data System (ADS)

Ali, Md Ershad

Optical techniques have been extensively used to examine the high frequency performance of a number of devices including High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Phototransistors (HPTs) and Low Temperature GaAs (LT-GaAs) Photoconductive Switches. To characterize devices, frequency and time domain techniques, namely optical heterodyning and electro-optic sampling, having measurement bandwidths in excess of 200 GHz, were employed. Optical mixing in three-terminal devices has been extended for the first time to submillimeter wave frequencies. Using a new generation of 50-nm gate pseudomorphic InP-based HEMTs, optically mixed signals were detected to 552 GHz with a signal-to-noise ratio of approximately 5 dB. To the best of our knowledge, this is the highest frequency optical mixing obtained in three- terminal devices to date. A novel harmonic three-wave detection scheme was used for the detection of the optically generated signals. The technique involved downconversion of the signal in the device by the second harmonic of a gate-injected millimeter wave local oscillator. Measurements were also conducted up to 212 GHz using direct optical mixing and up to 382 GHz using a fundamental three-wave detection scheme. New interesting features in the bias dependence of the optically mixed signals have been reported. An exciting novel development from this work is the successful integration of near-field optics with optical heterodyning. The technique, called near-field optical heterodyning (NFOH), allows for extremely localized injection of high-frequency stimulus to any arbitrary point of an ultrafast device or circuit. Scanning the point of injection across the sample provides details of the high frequency operation of the device with high spatial resolution. For the implementation of the technique, fiber-optic probes with 100 nm apertures were fabricated. A feedback controlled positioning system was built for accurate placement and scanning of the fiber probe with nanometric precision. The applicability of the NFOH technique was first confirmed by measurements on heterojunction phototransistors at 100 GHz. Later NFOH scans were performed at 63 GHz on two other important devices, HEMTs and LT-GaAs Photoconductive Switches. Spatially resolved response characteristics of these devices revealed interesting details of their operation.

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yun-Hsiang; A*STAR Institute of Microelectronics, Singapore 117685; Liang, Yung C., E-mail: chii@nus.edu.sg

2016-06-06

In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (V{sub TH}) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (APT) prior to the fluorine plasma treatment (FPT) on Al{sub 2}O{sub 3} gate dielectrics. For the MIS-HEMT with FPT only, its V{sub TH} drops from 4.2 V at room temperature to 0.5 V at 200 °C. Alternatively, for the device with APT-then-FPT process, its V{sub TH} can retain at 2.5 V at 200 °C due to the increased amount of deep-level traps that do not emit electrons atmore » 200 °C. This thermally stable V{sub TH} makes this device suitable for high power applications. The depth profile of the F atoms in Al{sub 2}O{sub 3}, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al{sub 2}O{sub 3} surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrödinger equation of Al{sub 2}O{sub x}F{sub y} cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al{sub 2}O{sub 3} bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.« less

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

NASA Technical Reports Server (NTRS)

Henderson, R. H.; Sun, D.; Towe, E.

1995-01-01

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

Crystal growth, spectral, structural and optical studies of π-conjugated stilbazolium crystal: 4-bromobenzaldehyde-4'-N'-methylstilbazolium tosylate.

PubMed

Krishna Kumar, M; Sudhahar, S; Bhagavannarayana, G; Mohan Kumar, R

2014-05-05

Nonlinear optical (NLO) organic compound, 4-bromobenzaldehyde-4'-N'-methylstilbazolium tosylate was synthesized by reflux method. The formation of molecular complex was confirmed from (1)H NMR, FT-IR and FT-Raman spectral analyses. The single crystals were grown by slow evaporation solution growth method and the crystal structure and atomic packing of grown crystal was identified. The morphology and growth axis of grown crystal were determined. The crystal perfection was analyzed using high resolution X-ray diffraction study on (001) plane. Thermal stability, decomposition stages and melting point of the grown crystal were analyzed. The optical absorption coefficient (α) and energy band gap (E(g)) of the crystal were determined using UV-visible absorption studies. Second harmonic generation efficiency of the grown crystal was examined by Kurtz powder method with different particle size using 1064 nm laser. Laser induced damage threshold study was carried out for the grown crystal using Nd:YAG laser. Copyright © 2014 Elsevier B.V. All rights reserved.

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jiagui; Wagner, Sean R.; Zhang, Pengpeng

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the (√3 x √3) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelasticmore » inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown (√3 x √3) phase is identical to that of the (√3 x √3) R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. Lastly, these findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.« less

Synthesis, growth, structural, spectroscopic and optical studies of a semiorganic NLO crystal: zinc guanidinium phosphate.

PubMed

Suvitha, A; Murugakoothan, P

2012-02-01

The semi-organic nonlinear optical (NLO) crystal, zinc guanidinium phosphate (ZGuP) has been grown through synthesis between zinc sulphate, guanidine carbonate and orthophosphoric acid from its aqueous solution by slow solvent evaporation technique. Solubility of the synthesized material has been determined for various temperatures using water as solvent. The grown crystal has been characterized by powder X-ray diffraction to confirm the crystal structure. Investigation has been carried out to assign the vibrational frequencies of the grown crystals by Fourier transform infrared spectroscopy technique. (1)H and (13)C FT-NMR have been recorded to elucidate the molecular structure. The optical absorption study confirms the suitability of the crystal for device applications. The second harmonic generation (SHG) efficiency of ZGuP is found to be 1.825 times that of potassium dihydrogen phosphate (KDP). Thermal behavior of the grown crystals has been studied by thermogravimetric and differential thermal analysis. The mechanical properties of the grown crystals have been studied using Vickers microhardness tester. Copyright © 2011 Elsevier B.V. All rights reserved.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

NASA Astrophysics Data System (ADS)

Schulze, C. S.; Huang, X.; Prohl, C.; Füllert, V.; Rybank, S.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lee, M. L.; Lenz, A.

2016-04-01

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

Development of GaN-based microchemical sensor nodes

NASA Technical Reports Server (NTRS)

Prokopuk, Nicholas; Son, Kyung-Ah; George, Thomas; Moon, Jeong S.

2005-01-01

Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

Microwave response of an HEMT photoconductor

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.

1988-01-01

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

NASA Technical Reports Server (NTRS)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

The QUIET Instrument

NASA Technical Reports Server (NTRS)

Gaier, T.; Kangaslahti, P.; Lawrence, C. R.; Leitch, E. M.; Wollack, E. J.

2012-01-01

The Q/U Imaging ExperimenT (QUIET) is designed to measure polarization in the Cosmic Microwave Background, targeting the imprint of inflationary gravitational waves at large angular scales ( approx 1 deg.) . Between 2008 October and 2010 December, two independent receiver arrays were deployed sequentially on a 1.4 m side-fed Dragonian telescope. The polarimeters which form the focal planes use a highly compact design based on High Electron Mobility Transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. The 17-element Q-band polarimeter array, with a central frequency of 43.1 GHz, has the best sensitivity (69 micro Ks(exp 1/2)) and the lowest instrumental systematic errors ever achieved in this band, contributing to the tensor-to-scalar ratio at r < 0.1. The 84-element W-band polarimeter array has a sensitivity of 87 micro Ks(exp 1/2) at a central frequency of 94.5 GHz. It has the lowest systematic errors to date, contributing at r < 0.01 (QUIET Collaboration 2012) The two arrays together cover multipoles in the range l approximately equals 25-975 . These are the largest HEMT-ba.sed arrays deployed to date. This article describes the design, calibration, performance of, and sources of systematic error for the instrument,

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Zheng, Jia-Xin; Ma, Xiao-Hua; Lu, Yang; Zhao, Bo-Chao; Zhang, Hong-He; Zhang, Meng; Cao, Meng-Yi; Hao, Yue

2015-10-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f0 and 2f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002).

THz frequency receiver instrumentation for Herschel's heterodyne instrument for far infrared (HIFI)

NASA Astrophysics Data System (ADS)

Pearson, John C.; Mehdi, Imran; Schlecht, Erich; Maiwald, Frank; Maestrini, Alain; Gill, John J.; Martin, Suzanne C.; Pukala, Dave; Ward, J.; Kawamura, Jonathan; McGrath, William R.; Hatch, William; Harding, Dennis G.; LeDuc, Henry G.; Stern, Jeffry A.; Bumble, Bruce; Samoska, Lorene A.; Gaier, Todd C.; Ferber, Robert; Miller, David; Karpov, Alexandre; Zmuidzinas, Jonas; Phillips, Thomas G.; Erickson, Neal R.; Swift, Jerry; Chung, Yun; Lai, Richard; Wang, Huei

2003-03-01

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. Two fixed tuned local oscillator sub-bands are derived from a common synthesizer to provide the front-end frequency coverage for each channel. The local oscillator unti will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, and novel material systems in the SIS mixtures. The National Aeronautics and Space Administration's Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the highest frequency (1650-1910 GHz) HEB mixers, local oscillators for the three highest frequency receivers as well as W-band power amplifiers, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

2017-05-01

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s, filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales.

PubMed

Wang, Jin; Namburu, Raju; Dubey, Madan; Dongare, Avinash M

2018-06-21

The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS 2 ) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS 2 terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD-grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moiré patterns. The Moiré islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of ~ 2% and at compressive strains of ~2.5%. The vertical displacements of the atoms and the dimensions of the Moiré islands predicted using the MD simulation are in excellent agreement with that observed experimentally.

Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds

NASA Astrophysics Data System (ADS)

Kang, San; Chatterjee, Uddipta; Um, Dae-Young; Seo, In Seok; Lee, Cheul-Ro

2017-12-01

Like all the ternary alloys in III-nitride materials family, aluminum gallium nitride (AlGaN) has unique band gap tuning property which enables the alloy to be suitable for many opto-electronic applications. The direct band gap of AlGaN can be tuned from 3.4 to 6.2 eV by changing the composition. In this article, the growth of ternary n-AlGaN micro and nano structures on Si (1 1 1) substrate is demonstrated via 2-step growth method employing metal organic chemical vapor deposition. During the growth flow of Trimethygallium is varied to modulate the final Al/Ga ratio. After the growth, various morphological, crystalline and optical characterizations are carried out to probe in the properties of the grown structures. Recorded X-ray diffraction patterns reveal that the realized structures are wurtzite single crystalline n-AlGaN having a near homogeneous Al distribution and validated by energy dispersive X-ray spectroscopy. Low temperature cathodoluminescence spectra show band edge emission in deep UV region which enables the grown n-AlGaN structures to efficiently find opto-electronic applications in the aforementioned region. Finally, planar photoconductive devices are fabricated using the grown 1-D structures and photocurrent evolution is measured. Structure bearing highest Al content shows a manifold enhancement in photo activity compared to other grown samples. Absolute photoresponsivities of the grown samples are calculated to be 301.47, 116 and 38.13 mA/W which is in accord with the findings of low temperature cathodoluminescence investigation. Therefore, it can be concluded that the successful realization of n-AlGaN 1-D structures varying Al content facilitates the further developments of the field concerning nano- and opto-electronic devices.

Evaluation of the optical characteristics of c-axis oriented zinc oxide thin films grown by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Baisakh, K.; Behera, S.; Pati, S.

2018-03-01

In this work we have systematically studied the optical characteristics of synthesized wurzite zinc oxide thin films exhibiting (002) orientation. Using sol gel spin coating technique zinc oxide thin films are grown on pre cleaned fused quartz substrates. Structural properties of the films are studied using X-ray diffraction analysis. Micro structural analysis and thickness of the grown samples are analyzed using field emission scanning electron microscopy. With an aim to investigate the optical characteristics of the grown zinc oxide thin films the transmission and reflection spectra are evaluated in the ultraviolet-visible (UV-VIS) range. Using envelope method, the refractive index, extinction coefficient, absorption coefficient, band gap energy and the thickness of the synthesized films are estimated from the recorded UV-VIS spectra. An attempt has also been made to study the influence of crystallographic orientation on the optical characteristics of the grown films.

High resolution synchrotron X-radiation diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals

NASA Technical Reports Server (NTRS)

Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Fripp, Archibald; Simchik, Richard

1991-01-01

Irregularities in three crystals grown in space and in four terrestrial crystals grown under otherwise comparable conditions have been observed in high resolution diffraction imaging. The images provide important new clues to the nature and origins of irregularities in each crystal. For two of the materials, mercuric iodide and lead tin telluride, more than one phase (an array of non-diffracting inclusions) was observed in terrestrial samples; but the formation of these multiple phases appears to have been suppressed in directly comparable crystals grown in microgravity. The terrestrial seed crystal of triglycine sulfate displayed an unexpected layered structure, which propagated during directly comparable space growth. Terrestrial Bridgman regrowth of gallium arsenide revealed a mesoscopic structure substantially different from that of the original Czochralski material. A directly comparable crystal is to be grown shortly in space.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

NASA Astrophysics Data System (ADS)

Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro

1999-11-01

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

Optical and structural studies of films grown thermally on zirconium surfaces

NASA Astrophysics Data System (ADS)

Morgan, J. M.; McNatt, J. S.; Shepard, M. J.; Farkas, N.; Ramsier, R. D.

2002-06-01

Variable angle IR reflection spectroscopy and atomic force microscopy are used to determine the thickness and morphology of films grown thermally on Zr surfaces in air. The density and homogeneity of these films increases with temperature in the range studied (773-873 K) and growth at the highest temperature follows cubic rate law kinetics. We demonstrate a structure-property relationship for these thermally grown films and suggest the application of IR reflectivity as an inspection method during the growth of environmentally passive films on industrial Zr components.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Growth, structural, spectral, optical, and thermal studies on amino acid based new NLO single crystal: L-phenylalanine-4-nitrophenol.

PubMed

Prakash, M; Lydia Caroline, M; Geetha, D

2013-05-01

A new organic nonlinear optical single crystal, L-phenylalanine-4-nitrophenol (LPAPN) belonging to the amino acid group has been successfully grown by slow evaporation technique. The lattice parameters of the grown crystal have been determined by X-ray diffraction studies. FT-IR spectrum was recorded to identify the presence of functional group and molecular structure was confirmed by NMR spectrum. Thermal strength of the grown crystal has been studied using TG-DTA analyses. The grown crystals were found to be transparent in the entire visible region. The existence of second harmonic generation signals was observed using Nd:YAG laser with fundamental wavelength of 1064 nm. Copyright © 2013 Elsevier B.V. All rights reserved.

Growth, structural, optical, mechanical and quantum chemical analysis of unidirectional grown bis(guanidinium) 5-sulfosalicylate (BGSSA) single crystal

NASA Astrophysics Data System (ADS)

Sreedevi, R.; Saravana Kumar, G.; Amarsingh Bhabu, K.; Balu, T.; Murugakoothan, P.; Rajasekaran, T. R.

2018-02-01

Bis(guanidinium) 5-sulfosalicylate single crystal was grown by using Sankaranarayanan-Ramasamy (SR) method from the solution of methanol and water in equimolar ratio. Good quality crystal with 50 mm length and 10 mm in diameter was grown. The grown crystal was subjected to single crystal X-ray diffraction analysis to confirm the crystal structure and it was found to be orthorhombic. UV-Vis-NIR spectroscopic study revealed that the SR method grown crystal had good optical transparency with wide optical band gap of 4.4 eV. The presence of the functional groups and modes of vibrations were identified by FTIR spectroscopy recorded in the range 4000-400 cm-1. The mechanical strength of the grown crystal was confirmed using Vickers microhardness tester by applying load from 25 g to 100 g. Density functional theory (DFT) method with B3LYP/6-31-G (d,p) level basis set was employed and hence the optimized molecular geometry, first order hyperpolarizability, dipole moment, thermodynamic functions, molecular electrostatic potential and frontier molecular orbital analysis of the grown BGSSA sample was computed and analysed.

Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Bryan, R. P.; Jones, E. D.; Biefield, R. M.; Olbright, G. R.

The use of trimethylamine alane (TMAA1) as an alternative to trimethylaluminum (TMA1) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films as well as complex optoelectronic device structures has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20 - 110 mbar with growth temperatures in the range 650 C less than or equal to T(sub G) less than or equal to 750 C. Wafer thickness uniformity is strongly dependent on growth pressure, and is acceptable only for the highest linear flow velocities. The 12 K photoluminescence (PL) spectra of AlGaAs layers grown using TMAA1 and TEGa exhibit uniformly intense and narrow bound-exciton emission throughout the growth temperature range investigated. To assess the viability of this new source for the low-pressure OMVPE growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser (VCSEL) structures were grown using TMAA1 extensively. Room temperature lasing at 850 nm was reproducibly obtained from the VCSEL structures, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.

First-principles study of alloying effects on fluorine incorporation in Al x Ga1-x N alloys

NASA Astrophysics Data System (ADS)

Wang, Rong; Tan, Wei; Zhang, Jian; Chen, Feng-Xiang; Wei, Su-Huai

2018-02-01

Incorporation of fluorine (F) into the AlGaN layer is crucial to the fabrication of enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). However, the understanding of properties of F doping in AlGaN alloys is rather limited. Using first-principles calculations and the special quasirandom structure (SQS) approach, we investigate the alloying effects on the doping properties of F-incorporated Al x Ga1-x N alloys. We find that substitutional F on N sites (FN) and interstitial F (Fi) are dominant defects for F in Al x Ga1-x N alloys. For these two types of defects, both the global composition x and the local motif surrounding the dopant play important roles. On contrary, the incorporation of substitutional F on Ga sites (FGa) or Al sites (FAl) are affected only by the composition x. We also find that there exists a large asymmetric bowing for the effective formation energies of FN and Fi. These results are explained in terms of local structural distortion and electronic effects. The mechanism discussed in this paper can also be used in understanding doping in other semiconductor alloys.

Energy and momentum relaxation of electrons in bulk and 2D GaN

NASA Astrophysics Data System (ADS)

Zanato, D.; Balkan, N.; Hill, G.; Schaff, W. J.

2004-10-01

We present our experimental and theoretical studies regarding the energy and momentum relaxation of hot electrons in n-type bulk GaN and AlGaN/GaN HEMT structures. We determine the non-equilibrium temperatures and the energy relaxation rates in the steady state using the mobility mapping technique together with the power balance conditions as described by us elsewhere [N. Balkan, M.C. Arikan, S. Gokden, V. Tilak, B. Schaff, R.J. Shealy, J. Phys.: Condens. Matter 14 (2002) 3457]. We obtain the e-LO phonon scattering time of 8 fs and show that the power loss of electrons due to optical phonon emission agrees with the theoretical prediction. The drift velocity-field curves at high electric fields indicate that the drift velocity saturates at approximately 3×10 6 cm/s for the two-dimensional structure and 4×10 6 cm/s for the bulk material at 77 K. These values are much lower than those predicted by the existing theories. A critical analysis of the observations is given with a model taking into account of the non-drifting non-equilibrium phonon production.

Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

DTIC Science & Technology

2015-04-22

Materials, Heterostrucuture Semiconductor, Light Emitting Devices, Molecular Beam Epitaxy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy ...designed structures were grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with the low-temperature growth technique. (The Ge-buffer

Development of GaN-based micro chemical sensor nodes

NASA Technical Reports Server (NTRS)

Son, Kyung-ah; Prokopuk, Nicholas; George, Thomas; Moon, Jeong S.

2005-01-01

Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

Extended behavioural device modelling and circuit simulation with Qucs-S

NASA Astrophysics Data System (ADS)

Brinson, M. E.; Kuznetsov, V.

2018-03-01

Current trends in circuit simulation suggest a growing interest in open source software that allows access to more than one simulation engine while simultaneously supporting schematic drawing tools, behavioural Verilog-A and XSPICE component modelling, and output data post-processing. This article introduces a number of new features recently implemented in the 'Quite universal circuit simulator - SPICE variant' (Qucs-S), including structure and fundamental schematic capture algorithms, at the same time highlighting their use in behavioural semiconductor device modelling. Particular importance is placed on the interaction between Qucs-S schematics, equation-defined devices, SPICE B behavioural sources and hardware description language (HDL) scripts. The multi-simulator version of Qucs is a freely available tool that offers extended modelling and simulation features compared to those provided by legacy circuit simulators. The performance of a number of Qucs-S modelling extensions are demonstrated with a GaN HEMT compact device model and data obtained from tests using the Qucs-S/Ngspice/Xyce ©/SPICE OPUS multi-engine circuit simulator.

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

NASA Astrophysics Data System (ADS)

Green, D. S.; Gibb, S. R.; Hosse, B.; Vetury, R.; Grider, D. E.; Smart, J. A.

2004-12-01

High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible for leakage currents, trapping effects, and may adversely affect device reliability. We have studied the impact of AlN nucleation conditions on the density and character of threading dislocations on SiC substrates. Variation of the nucleation temperature, V/III ratio, and thickness are seen to have a dramatic effect on the balance between edge, screw and mixed character dislocation densities. Electrical and structural properties have been assessed by AFM and XRD on a material level and through DC and RF performance at the device level. The ratio between dislocation characteristics has been established primarily through comparison of symmetric and asymmetric XRD rocking curve widths. The effect of each dislocation type on leakage current, RF power and reliability at 2 GHz, the targeted band for cell phone infrastructure applications, is discussed.

Increased Alignment in Carbon Nanotube Growth

NASA Technical Reports Server (NTRS)

Delzeit, Lance D. (Inventor)

2007-01-01

Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a substrate surface. A single electrode, having an associated voltage source with a selected voltage, is connected to a substrate surface after the substrate is coated and before growth of the CNT structures, for a selected voltage application time interval. The CNT structures are then grown on a coated substrate surface with the desired orientation. Optionally, the electrode can be disconnected before the CNT structures are grown.

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Structural and optical properties of WTe2 single crystals synthesized by DVT technique

NASA Astrophysics Data System (ADS)

Dixit, Vijay; Vyas, Chirag; Pathak, V. M.; Soalanki, G. K.; Patel, K. D.

2018-05-01

Layered transition metal di-chalcogenide (LTMDCs) crystals have attracted much attention due to their potential in optoelectronic device applications recently due to realization of their monolayer based structures. In the present investigation we report growth of WTe2 single crystals by direct vapor transport (DVT) technique. These crystals are then characterized by energy dispersive analysis of x-rays (EDAX) to study stoichiometric composition after growth. The structural properties are studied by x-ray diffraction (XRD) and selected area electron diffraction (SAED) is used to confirm orthorhombic structure of grown WTe2 crystal. Surface morphological properties of the crystals are also studied by scanning electron microscope (SEM). The optical properties of the grown crystals are studied by UV-Visible spectroscopy which gives direct band gap of 1.44 eV for grown WTe2 single crystals.

Synthesis of zinc oxide nanostructures on graphene/glass substrate by electrochemical deposition: effects of current density and temperature.

PubMed

Hambali, Nur Ashikyn; Yahaya, Hafizal; Mahmood, Mohamad Rusop; Terasako, Tomoaki; Hashim, Abdul Manaf

2014-01-01

The electrochemical growth of zinc oxide (ZnO) nanostructures on graphene on glass using zinc nitrate hexahydrate was studied. The effects of current densities and temperatures on the morphological, structural, and optical properties of the ZnO structures were studied. Vertically aligned nanorods were obtained at a low temperature of 75°C, and the diameters increased with current density. Growth temperature seems to have a strong effect in generating well-defined hexagonal-shape nanorods with a smooth top edge surface. A film-like structure was observed for high current densities above -1.0 mA/cm(2) and temperatures above 80°C due to the coalescence between the neighboring nanorods with large diameter. The nanorods grown at a temperature of 75°C with a low current density of -0.1 mA/cm(2) exhibited the highest density of 1.45 × 10(9) cm(-2). X-ray diffraction measurements revealed that the grown ZnO crystallites were highly oriented along the c-axis. The intensity ratio of the ultraviolet (UV) region emission to the visible region emission, I UV/I VIS, showed a decrement with the current densities for all grown samples. The samples grown at the current density below -0.5 mA/cm(2) showed high I UV/I VIS values closer to or higher than 1.0, suggesting their fewer structural defects. For all the ZnO/graphene structures, the high transmittance up to 65% was obtained at the light wavelength of 550 nm. Structural and optical properties of the grown ZnO structures seem to be effectively controlled by the current density rather than the growth temperature. ZnO nanorod/graphene hybrid structure on glass is expected to be a promising structure for solar cell which is a conceivable candidate to address the global need for an inexpensive alternative energy source.

Structural and optical characterization of NiSe film grown by screen-printing method

NASA Astrophysics Data System (ADS)

Sharma, Kapil; Sharma, D. K.; Dwivedi, D. K.; Kumar, Vipin

2018-05-01

In present investigation NiSe films were grown by economical screen-printing method. Optimum conditions for growing good quality screen-printed films were found. The films were characterized for their structural and optical properties. The polycrystalline nature of films with hexagonal structure was confirmed through XRD analysis. Direct type of optical band gap of 1.75 eV for the NiSe film was confirmed by optical characterization.

Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

PubMed

Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

2014-06-01

Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, C. S.; Prohl, C.; Füllert, V.

2016-04-04

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration ofmore » III-V optoelectronic components into silicon-based technology.« less

Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Nafis; Bhargav, P. Balaji; Ramasamy, P.

2015-06-24

Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.

Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature.

PubMed

Rashiddy Wong, Freddawati; Ahmed Ali, Amgad; Yasui, Kanji; Hashim, Abdul Manaf

2015-12-01

We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the first time. The controlling parameters of current density and electrolyte molarity were found to greatly influence the properties of the grown structures. The thicknesses of the deposited structures increase with the current density since it increases the chemical reaction rates. The layers grown at low molarities of both solutions basically show grain-like layer with cracking structures and dominated by both Ga2O3 and GaON. Such cracking structures seem to diminish with the increases of molarities of one of the solutions. It is speculated that the increase of current density and ions in the solutions helps to promote the growth at the area with uneven thicknesses of graphene. When the molarity of Ga(NO3)3 is increased while keeping the molarity of NH4NO3 at the lowest value of 2.5 M, the grown structures are basically dominated by the Ga2O3 structure. On the other hand, when the molarity of NH4NO3 is increased while keeping the molarity of Ga(NO3)3 at the lowest value of 0.8 M, the GaON structure seems to dominate where their cubic and hexagonal arrangements are coexisting. It was found that when the molarities of Ga(NO3)3 are at the high level of 7.5 M, the grown structures tend to be dominated by Ga2O3 even though the molarity of NH4NO3 is made equal or higher than the molarity of Ga(NO3)3. When the grown structure is dominated by the Ga2O3 structure, the deposition process became slow or unstable, resulting to the formation of thin layer. When the molarity of Ga(NO3)3 is increased to 15 M, the nanocluster-like structures were formed instead of continuous thin film structure. This study seems to successfully provide the conditions in growing either GaON-dominated or Ga2O3-dominated structure by a simple and low-cost ECD. The next possible routes to convert the grown GaON-dominated structure to either single-crystalline GaN or Ga2O3 as well as Ga2O3-dominated structure to single-crystalline Ga2O3 structure have been discussed.

Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

NASA Astrophysics Data System (ADS)

Okasaka, Shouta; Kubo, Osamu; Tamba, Daiki; Ohashi, Tomohiro; Tabata, Hiroshi; Katayama, Mitsuhiro

2015-05-01

Geometry and surface structure of a BaSi2(100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi2(100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi2(100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi2(100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi2(100) film grown on Si(111) is terminated by Si tetrahedra.

Cell wall canals formed upon growth of Candida maltosa in the presence of hexadecane are associated with polyphosphates.

PubMed

Zvonarev, Anton N; Crowley, David E; Ryazanova, Lubov P; Lichko, Lydia P; Rusakova, Tatiana G; Kulakovskaya, Tatiana V; Dmitriev, Vladimir V

2017-05-01

Canals are supramolecular complexes observed in the cell wall of Candida maltosa grown in the presence of hexadecane as a sole carbon source. Such structures were not observed in glucose-grown cells. Microscopic observations of cells stained with diaminobenzidine revealed the presence of oxidative enzymes in the canals. 4΄,6΄-diamino-2-phenylindole staining revealed that a substantial part of cellular polyphosphate was present in the cell wall of cells grown on hexadecane in condition of phosphate limitation. The content and chain length of polyphosphates were higher in hexadecane-grown cells than in glucose grown ones. The treatment of cells with yeast polyphosphatase PPX1 resulted in the decrease of the canal size. These data clearly indicated that polyphosphates are constituents of canals; they might play an important role in the canal structure and functioning. © FEMS 2017. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Electrochemical deposition of silver crystals aboard Skylab 4

NASA Technical Reports Server (NTRS)

Grodzka, P. G.; Facemire, B. R.; Johnston, M. H.; Gates, D. W.

1976-01-01

Silver crystals were grown aboard Skylab 4 by an electro-chemical reaction and subsequently returned to earth for comparison with crystals grown at 1- and 5-g. Both the Skylab and earth-grown crystals show a variety of structures. Certain tendencies in structure dependency on gravity level, however, can be discerned. In addition, downward growing dendrite streamers; upward growing chunky crystal streamers; growth along an air/liquid interface; and ribbon, film, and fiber crystal habits were observed in experiments conducted on the ground with solutions of varying concentrations. It was also observed that the crystal structures of space and ground electro-deposited silver crystals were very similar to the structures of germanium selenide and germanium telluride crystals grown in space and on the ground by a vapor transport technique. Consideration of the data leads to the conclusions that: (1) the rate of electrochemical displacement of silver ions from a 5 percent aqueous solution by copper is predominantly diffussion controlled in space and kinetically controlled in 1- and higher-g because of augmentation of mass transport by convection; (2) downward and upward crystal streamers are the result of gravity-driven convection, the flow patterns of which can be delineated. Lateral growths along an air/liquid interface are the result of surface-tension-driven convection, the pattern of which also can be delineated; (3) electrolysis in space or low-g environments can produce either dendritic crystals with more perfect microcrystalline structures or massive, single crystals with fewer defects than those grown on ground or at higher g-levels. Ribbons or films of space-grown silicon crystals would find a ready market for electronic substrate and photocell applications. Space-grown dendritic, metal crystals present the possibility of unique catalysts. Large perfect crystals of various materials are desired for a number of electronic and optical applications; and (4) vapor transport growth of germanium selenide and germanium telluride is affected by convection mechanisms similar to the mechanisms hypothesized for the electrochemical deposition of silver crystals. Evidence and considerations leading to the preceding summaries and conclusions are presented. The implications of the findings and conclusions for technological applications are discussed, and recommendations for further experiments are presented.

SKYLAB (SL)-3 - EXPERIMENT HARDWARE

NASA Image and Video Library

1973-11-08

S74-19677 (April 1974) --- This crystal of Germanium Selenide (GeSe) was grown under weightless conditions in an electric furnace aboard the Skylab space station. Experiment M556, Vapor Growth of IV-VI Compounds, was conducted as a comparative test of GeSe crystals grown on Earth and those grown in a weightless environment. Skylab postflight results indicate that crystals grown in a zero-gravity situation demonstrate greater growth and better composite structure than those grown in ground-bases laboratories. The GeSe crystal shown here is 20 millimeters long, the largest crystal ever grown on Earth or in space. Principal Investigator for Experiment M556 is Dr. Harry Wiedemaier, Rensselaer Polytechnic Institute, Troy, New York. (See NASA photograph S74-19676 for an example of an Earth-grown Germanium Selenide crystal.) Photo credit: NASA

Effect of diurnal photosynthetic activity on the fine structure of amylopectin from normal and waxy barley starch.

PubMed

Goldstein, Avi; Annor, George; Blennow, Andreas; Bertoft, Eric

2017-09-01

The impact of diurnal photosynthetic activity on the fine structure of the amylopectin fraction of starch synthesized by normal barley (NBS) and waxy barley (WBS), the latter completely devoid of amylose biosynthesis, was determined following the cultivation under normal diurnal or constant light growing conditions. The amylopectin fine structures were analysed by characterizing its unit chain length profiles after enzymatic debranching as well as its φ,β-limit dextrins and its clusters and building blocks after their partial and complete hydrolysis with α-amylase from Bacillus amyloliquefaciens, respectively. Regardless of lighting conditions, no structural effects were found when comparing both the amylopectin side-chain distribution and the internal chain fragments of these amylopectins. However, the diurnally grown NBS and WBS both showed larger amylopectin clusters and these had lower branching density and longer average chain lengths than clusters derived from plants grown under constant light conditions. Amylopectin clusters from diurnally grown plants also consisted of a greater number of building blocks, and shorter inter-block chain lengths compared to clusters derived from plants grown under constant light. Our data demonstrate that the diurnal light regime influences the fine structure of the amylopectin component both in amylose and non-amylose starch granules. Copyright © 2017 Elsevier B.V. All rights reserved.

Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

NASA Astrophysics Data System (ADS)

Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

2016-12-01

Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

DTIC Science & Technology

2017-10-16

DARPA) or the U.S. Government. Report contains color. 14. ABSTRACT The objective of this project is to experimentally study the transient non ...the Metal Thin Film in TDTR ........................................ 14 4.3 Experimental Observation of the Frequency Filtering Effect...scale of the device layers and the high density of interfaces, non -diffusive heat conduction plays a critical role in thermal transport of GaN devices

Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25-micro m Qorvo Process

DTIC Science & Technology

2017-07-27

and sensor systems of interest to US Defense Department applications, particularly for next-generation radar systems. Broadband, efficient, high...A simple GaN high-electron-mobility-transistor (HEMT) TR single-pull double- throw (SPDT) switch consists of at least 2 series- and 2 shunt... simple TR switch that works well up to 6 GHz is shown in Figs. 4 (layout) and 5 (simulation). Complementary DC-bias voltages are applied at inputs A

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

NASA Astrophysics Data System (ADS)

Pevtsov, E. Ph; Bespalov, A. V.; Demenkova, T. A.; Luchnikov, P. A.

2017-04-01

The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

DOE PAGES

Klein, Brianna A.; Baca, Albert G.; Armstrong, Andrew M.; ...

2017-09-23

Here, we present a low resistance, straightforward planar ohmic contact for Al 0.45Ga 0.55N/Al 0.3Ga 0.7N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ c = 2.5 × 10 -5 Ω cm², sheet resistances of R SH = 3.9 kΩ/more » $$\\blacksquare$$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al 0.45Ga 0.55N/Al 0.3Ga 0.7N HEMTs.« less

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, Brianna A.; Baca, Albert G.; Armstrong, Andrew M.

Here, we present a low resistance, straightforward planar ohmic contact for Al 0.45Ga 0.55N/Al 0.3Ga 0.7N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ c = 2.5 × 10 -5 Ω cm², sheet resistances of R SH = 3.9 kΩ/more » $$\\blacksquare$$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al 0.45Ga 0.55N/Al 0.3Ga 0.7N HEMTs.« less

Magnetoelectric Effect in Gallium Arsenide-Nickel-Tin-Nickel Multilayer Structures

NASA Astrophysics Data System (ADS)

Filippov, D. A.; Tikhonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

2018-02-01

Experimental data have been presented for the magnetoelectric effect in nickel-tin-nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni-GaAs interface and, thus, makes it possible to grow good structures with a 70-μm-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.

Molecule diagram from space-grown crystals

NASA Technical Reports Server (NTRS)

2004-01-01

Researchers' at Hauptman-Woodward Medical Research Institute, in Buffalo, N.Y. have analyzed the molecular structures of insulin crystals grown during Space Shuttle experiments and are unlocking the mystery of how insulin works.

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

2013-06-01

By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

Structural and physical properties of InAlAs quantum dots grown on GaAs

NASA Astrophysics Data System (ADS)

Vasile, B. S.; Daly, A. Ben; Craciun, D.; Alexandrou, I.; Lazar, S.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Craciun, V.

2018-04-01

Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

Synthesis and structural study of 4-(2-chlorophenyl)-2-ethoxy-5,6,7,8,9,10-hexahydrocycloocta[B]pyridine-3-carbonitrile

NASA Astrophysics Data System (ADS)

Fathima, K. Saiadali; Vasumathi, M.; Anitha, K.

2016-05-01

The novel organic material C20H21ClN2O was synthesized by One-Pot synthesis method and the single crystals were grown by slow evaporation solution growth technique. The crystal structure was elucidated by subjecting the grown crystals to the single crystal x-ray diffraction analysis and was refined by full matrix least-squares method to R=0.039 for 2746 reflections. Crystal system of the grown crystal was found to be monoclinic with the space group P21/a and a=9.196(4) Å, b=13.449(4) Å, c=14.818(4) Å, β= 101.542(3)°, V=1795.6(11) Å3 and Z=4. In this crystal structure, cyclooctanone prefers to reside in a chair-boat conformation. The structure is stabilized by attractive molecular force such as CH/π interaction called hydrophobic interaction.

Si Nanoribbons on Ag(110) Studied by Grazing-Incidence X-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure.

PubMed

Prévot, Geoffroy; Hogan, Conor; Leoni, Thomas; Bernard, Romain; Moyen, Eric; Masson, Laurence

2016-12-30

We report a combined grazing incidence x-ray diffraction (GIXD), scanning tunneling microscopy (STM), and density-functional theory (DFT) study which clearly elucidates the atomic structure of the Si nanoribbons grown on the missing-row reconstructed Ag(110) surface. Our study allows us to discriminate between the theoretical models published in the literature, including the most stable atomic configurations and those based on a missing-row reconstructed Ag(110) surface. GIXD measurements unambiguously validate the pentamer model grown on the reconstructed surface, obtained from DFT. This pentamer atomistic model accurately matches the high-resolution STM images of the Si nanoribbons adsorbed on Ag(110). Our study closes the long-debated atomic structure of the Si nanoribbons grown on Ag(110) and definitively excludes a honeycomb structure similar to that of freestanding silicene.

Nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates

DOEpatents

Melechko, Anatoli V [Oak Ridge, TN; McKnight, Timothy E [Greenback, TN; Guillorn, Michael A [Ithaca, NY; Ilic, Bojan [Ithaca, NY; Merkulov, Vladimir I [Knoxville, TN; Doktycz, Mitchel J [Knoxville, TN; Lowndes, Douglas H [Knoxville, TN; Simpson, Michael L [Knoxville, TN

2011-08-23

Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. An apparatus, includes a substrate and a nanoreplicant structure coupled to a surface of the substrate.

Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Kukli, Kaupo; Ritala, Mikko; Aarik, Jaan; Uustare, Teet; Leskela, Markku

2002-08-01

ZrO2 films were grown by atomic layer deposition from ZrCl4 and H2O or a mixture of H2O and H2O2 on Si(100) substrates in the temperature range of 180-600 degC. The films were evaluated in the as-deposited state, in order to follow the effect of deposition temperature on the film quality. The rate of crystal growth increased and the content of residual impurities decreased with increasing temperature. The zirconium-to-oxygen atomic ratio, determined by ion-beam analysis, corresponded to the stoichiometric dioxide regardless of the growth temperature. The effective permittivity of ZrO2 in Al/ZrO2/Si capacitor structures increased from 13-15 in the films grown at 180 degC to 19 in the films grown at 300-600 degC, measured at 100 kHz. The permittivity was relatively high in the crystallized films, compared to the amorphous ones, but rather insensitive to the crystal structure. The permittivity was higher in the films grown using water. The leakage current density tended to be lower and the breakdown field higher in the films grown using hydrogen peroxide.

Synthesis, growth, structural, optical, luminescence, surface and HOMO LUMO analysis of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate organic single crystals grown by a slow evaporation technique

NASA Astrophysics Data System (ADS)

Karthigha, S.; Kalainathan, S.; Maheswara Rao, Kunda Uma; Hamada, Fumio; Yamada, Manabu; Kondo, Yoshihiko

2016-02-01

Single crystals of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate (4CLNS) were grown by a slow evaporation technique. The formation of molecule was confirmed from 1H NMR and FTIR analysis. The confirmation of crystal structure was done by single crystal XRD and atomic packing of grown crystal was identified. The grown single crystal crystallized in triclinic structure with centrosymmetric space group P-1. The crystalline nature of the synthesised material was recorded by powder XRD. The optical absorption properties of the grown crystals were analyzed by UV-vis spectral studies. The thermal behaviour of the title material has been studied by TG/DTA analysis which revealed the stability of the compound till its melting point 276.7 °C. The third order nonlinear optical property of 4CLNS was investigated in detail by Z scan technique and it confirms that the title crystal is suitable for photonic devices and NLO optical applications. Emissions at 519 nm in green region of the EM spectrum were found by photoluminescence studies. The charge transfer occurring within the molecule is explained by the calculated HOMO and LUMO energies.

Structural and optical characteristics of GaAs films grown on Si/Ge substrates

NASA Astrophysics Data System (ADS)

Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

2018-03-01

A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

NASA Astrophysics Data System (ADS)

Usikov, Alexander; Soukhoveev, Vitali; Kovalenkov, Oleg; Syrkin, Alexander; Shapovalov, Liza; Volkova, Anna; Ivantsov, Vladimir

2013-08-01

We report on accumulation of background Si and O impurities measured by secondary ion mass spectrometry (SIMS) at the sub-interfaces in undoped, Zn- and Mg-doped multi-layer GaN structures grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates with growth interruptions. The impurities accumulation is attributed to reaction of ammonia with the rector quartz ware during the growth interruptions. Because of this effect, HVPE-grown GaN layers had excessive Si and O concentration on the surface that may hamper forming of ohmic contacts especially in the case of p-type layers and may complicate homo-epitaxial growth of a device structure.

Effect of RF power density on micro- and macro-structural properties of PECVD grown hydrogenated nanocrystalline silicon thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gokdogan, Gozde Kahriman, E-mail: gozdekahriman@gmail.com; Anutgan, Tamila, E-mail: tamilaanutgan@karabuk.edu.tr

2016-03-25

This contribution provides the comparison between micro- and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P{sub RF}: 100−444 mW/cm{sup 2}). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (∼5 nm) and FE-SEM surface conglomerate size (∼40 nm) decreases with increasing P{sub RF}, crystalline volume fraction reaches maximum at 162 mW/cm{sup 2}, FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm{sup 2}. The dependence of previously determinedmore » ‘oxygen content–refractive index’ correlation on obtained macro-structure is investigated. Also, the effect of P{sub RF} is discussed in the light of plasma parameters during film deposition process and nc-Si:H film growth models.« less

Enhanced Structural and Luminescent Properties of Carbon-Assisted ZnO Nanorod Arrays on (100) Si Substrate

NASA Astrophysics Data System (ADS)

Yoon, Im Taek; Cho, Hak Dong; Lee, Sejoon; Roshchupkin, Dmitry V.

2018-02-01

We have fabricated as-grown ZnO nanorods (NRs) and carbon-assisted NR arrays on semi-insulating (100)-oriented Si substrates. We compared the structural and luminescent properties of them. High-resolution transmission microscopy, field emission scanning electron microscopy, x-ray diffraction and energy-dispersive x-ray revealed that the as-grown ZnO NRs and carbon-assisted ZnO NRs were single crystals with a hexagonal wurtzite structure, and grew with a c-axis orientation perpendicular to the Si substrate. These measurements show that the carbon-assisted ZnO NRs were better synthesized vertically on an Si substrate compared to the as-grown ZnO NRs. Photoluminescence measurements showed that luminescence intensity of the carbon-assisted ZnO NRs was enhanced compared to the as-grown ZnO NRs. The enhanced luminescence intensity of the carbon-assisted ZnO demonstrates the possible improvement in the performance of photovoltaic nanodevices based on ZnO-like materials. This method can be applied to the fabrication of well-aligned ZnO NRs used widely in optoelectronic devices.

Synthesis of cobalt doped BiFeO3 multiferroic thin films on p-Si substrate by sol-gel method

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Shrisha, B. V.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and cobalt doped BiFeO3 (BiFe1-xCoxO3) nanostructure thin films were grown on p-silicon substrates by sol-gel spin coating method with a sequence of coating and annealing process. The post-annealing of the grown films was carried out under high pure argon atmosphere. The grown nanostructure thin films were characterized using XRD, FESEM, and AFM for the structural, morphological and topological studies, respectively. The elemental compositions of the samples were studied by EDX spectra. The PL spectra of the grown sample shows a narrow emission peak around 559 nm which corresponds to the energy band gap of BFO thin films. The XRD peaks of the BiFeO3 nanostructure thin film reveals the rhombohedral structure and transformed from rhombohedral to orthorhombic or tetragonal structure in Co doped BiFeO3 thin films. The Co substitution in BiFeO3 helped to obtain higher dense nanostructure thin films with smaller grain size than the BiFeO3 thin films.

Crystal growth, structural, low temperature thermoluminescence and mechanical properties of cubic fluoroperovskite single crystal (LiBaF3)

NASA Astrophysics Data System (ADS)

Daniel, D. Joseph; Ramasamy, P.; Ramaseshan, R.; Kim, H. J.; Kim, Sunghwan; Bhagavannarayana, G.; Cheon, Jong-Kyu

2017-10-01

Polycrystalline compounds of LiBaF3 were synthesized using conventional solid state reaction route and the phase purity was confirmed using powder X-ray diffraction technique. Using vertical Bridgman technique single crystal was grown from melt. Rocking curve measurements have been carried out to study the structural perfection of the grown crystal. The single peak of diffraction curve clearly reveals that the grown crystal was free from the structural grain boundaries. The low temperature thermoluminescence of the X-ray irradiated sample has been analyzed and found four distinguishable peaks having maximum temperatures at 18, 115, 133 and 216 K. Activation energy (E) and frequency factor (s) for the individual peaks have been studied using Peak shape method and the computerized curve fitting method combining with the Tmax- TStop procedure. Nanoindentation technique was employed to study the mechanical behaviour of the crystal. The indentation modulus and Vickers hardness of the grown crystal have values of 135.15 GPa and 680.81 respectively, under the maximum indentation load of 10 mN.

Growth and properties of wide bandgap (MgSe)n(ZnxCd1-xSe)m short-period superlattices

NASA Astrophysics Data System (ADS)

Garcia, Thor A.; Tamargo, Maria C.

2017-12-01

We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)n(ZnxCd1-x Se)m short-period superlattices(SPSLs) for potential application in II-VI devices grown on InP substrates. SPSL structures up to 1 μm thick with effective bandgaps ranging from 2.6 eV to above 3.42 eV are grown and characterized, extending the typical range possible for the ZnxCdyMg1-x-ySe random alloy beyond 3.2 eV. Additionally, ZnxCd1-xSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1-x-ySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications.

Magnetic structure and phase stability of the van der Waals bonded ferromagnet Fe 3-xGeTe 2

DOE PAGES

May, Andrew F.; Calder, Stuart A.; Cantoni, Claudia; ...

2016-01-08

The magnetic structure and phase diagram of the layered ferromagnetic compound Fe 3GeTe 2 have been investigated by a combination of synthesis, x-ray and neutron diffraction, high-resolution microscopy, and magnetization measurements. Single crystals were synthesized by self-flux reactions, and single-crystal neutron diffraction finds ferromagnetic order with moments of 1.11(5)μ B/Fe aligned along the c axis at 4 K. These flux-grown crystals have a lower Curie temperature T c ≈ 150 K than crystals previously grown by vapor transport (T c = 220 K). The difference is a reduced Fe content in the flux-grown crystals, as illustrated by the behavior observedmore » in a series of polycrystalline samples. As Fe content decreases, so do the Curie temperature, magnetic anisotropy, and net magnetization. Furthermore, Hall-effect and thermoelectric measurements on flux-grown crystals suggest that multiple carrier types contribute to electrical transport in Fe 3–xGeTe 2 and structurally similar Ni 3–xGeTe 2.« less

180-GHz I-Q Second Harmonic Resistive Mixer MMIC

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka P.; Lai, Richard; Mei, Xiaobing

2010-01-01

An indium phosphide MMIC (monolithic microwave integrated circuit) mixer was developed, processed, and tested in the NGC 35-nm-gate-length HEMT (high electron mobility transistor) process. This innovation is very compact in size and operates with very low LO power. Because it is a resistive mixer, this innovation does not require DC power. This is an enabling technology for the miniature receiver modules for the GeoSTAR instrument, which is the only viable option for the NRC decadal study mission PATH.

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

DTIC Science & Technology

2017-03-01

Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265 Abstract: We report on a multi-octave (100 MHz ‒ 8 GHz), linear nonuniform distributed...amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate- length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform ...MHz ‒ 8 GHz) GaN MMIC nonuniform distributed amplifier (NDPA) with built-in linearization and a gm3 cancellation method in class A and class C

Wafer Scale Union.

DTIC Science & Technology

1992-05-31

configuration. 25 We have tested it electronically to 26 GHz and found that the microwave loss is under 10 dB over the entire range. Our initial phase...UNION EFFORT 32 IEEE MICROWAVE AND GUIDED WAVE LETTERS. VOL. I. NO. 2. FEBRUARY 1991 Wide-Band Millimeter Wave Characterization of Sub-0.2 Micrometer...transistors (HEMT’s) ar nra- (over the frequency range of 1-26 GHz) and a network analyzer H ingly replacing GaAs MESFET’s in microwave and rail- als(ove r

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Band-to-Band Tunneling Transistors: Scalability and Circuit Performance

DTIC Science & Technology

2013-05-01

to this point. The inability to create GaN ingots as cost effective substrates (or Silicon Carbide ingots coupled with GaN deposition) means that...was vastly different than standard Silicon CMOS (e.g. HEMTs and GaN channel devices were included, but not III-V-channel MOS or Germanium-channel MOS...the same wafer, wafer bonding has been used by Chung et al. to attach GaN to Silicon wafers, where a p-type Si device can be used [15]. Since

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

DTIC Science & Technology

2011-11-01

stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR

Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

DTIC Science & Technology

1998-08-01

10-20 V ) have been demonstrated, with power added efficiencies between 10% (around 1 W) and 50% (around 20 mW) at 60 GHz. For higher frequencies...IEDM98, pp. 695-698, S. Francisco, CA, December 6-9, 1998. G. Meneghesso, A. Neviani , R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C. Canali and...8217 / / ’ ’ / / " / s / collector-to-emitter voltage VCE ( V ) Figure 1.1: Collector current, Ic vs. the collector to emitter voltage VCE at

Structural, magnetic and electronic properties of pulsed-laser-deposition grown SrFeO3-δ thin films and SrFeO3-δ /La2/3Ca1/3MnO3 multilayers

NASA Astrophysics Data System (ADS)

Perret, E.; Sen, K.; Khmaladze, J.; Mallett, B. P. P.; Yazdi-Rizi, M.; Marsik, P.; Das, S.; Marozau, I.; Uribe-Laverde, M. A.; de Andrés Prada, R.; Strempfer, J.; Döbeli, M.; Biškup, N.; Varela, M.; Mathis, Y.-L.; Bernhard, C.

2017-12-01

We studied the structural, magnetic and electronic properties of SrFeO3-δ (SFO) thin films and SrFeO3-δ /La2/3 Ca1/3 MnO3 (LCMO) superlattices that have been grown with pulsed laser deposition (PLD) on La0.3 Sr0.7 Al0.65 Ta0.35 O3 (LSAT) substrates. X-ray reflectometry and scanning transmission electron microscopy (STEM) confirm the high structural quality of the films and flat and atomically sharp interfaces of the superlattices. The STEM data also reveal a difference in the interfacial layer stacking with a SrO layer at the LCMO/SFO and a LaO layer at the SFO/LCMO interfaces along the PLD growth direction. The x-ray diffraction (XRD) data suggest that the as grown SFO films and SFO/LCMO superlattices have an oxygen-deficient SrFeO3-δ structure with I4/ mmm space group symmetry (δ≤slant 0.2 ). Subsequent ozone annealed SFO films are consistent with an almost oxygen stoichiometric structure (δ ≈ 0 ). The electronic and magnetic properties of these SFO films are similar to the ones of corresponding single crystals. In particular, the as grown SrFeO3-δ films are insulating whereas the ozone annealed films are metallic. The magneto-resistance effects of the as grown SFO films have a similar magnitude as in the single crystals, but extend over a much wider temperature range. Last but not least, for the SFO/LCMO superlattices we observe a rather large exchange bias effect that varies as a function of the cooling field.

Growth and microtopographic study of CuInSe{sub 2} single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P.

2016-05-23

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

High nitrogen pressure solution growth of GaN

NASA Astrophysics Data System (ADS)

Bockowski, Michal

2014-10-01

Results of GaN growth from gallium solution under high nitrogen pressure are presented. Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. Depending on the seeds’ structural quality, the differences in the structural properties of pressure grown material are demonstrated and analyzed. The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. The properties of differently doped GaN crystals are discussed. An application of the pressure grown GaN crystals as substrates for electronic and optoelectronic devices is reported.

Crystal growth, thermal and optical studies of semiorganic nonlinear optical material: L-lysine hydrochloride dihydrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalaiselvi, D.; Mohan Kumar, R.; Jayavel, R.

2008-07-01

Single crystals of L-lysine hydrochloride dihydrate (LLHCD), a nonlinear optical material, have been grown by slow cooling technique from its aqueous solution. LLHCD was found to be highly soluble in water. The grown crystals have been subjected to single crystal X-ray diffraction to confirm the structure and to estimate the lattice parameters. The vibrational structure of the molecule is elucidated from FTIR spectra. Thermal analysis revealed the thermal stability of the grown crystals. The optical transmittance spectrum shows that the material possesses good optical transparency in the entire visible region with a UV cut-off wavelength at 228 nm. The mechanicalmore » properties of the grown crystal have been studied using Vicker's microhardness test. The laser damage threshold of 52.25 MW/cm{sup 2} has been measured by irradiating Q-switched Nd:YAG laser (1064 nm)« less

Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru; Khabibullin, R. A.; Yachmenev, A. E.

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

Zeolite Crystal Growth (ZCG) Flight on USML-2

NASA Technical Reports Server (NTRS)

Sacco, Albert, Jr.; Bac, Nurcan; Warzywoda, Juliusz; Guray, Ipek; Marceau, Michelle; Sacco, Teran L.; Whalen, Leah M.

1997-01-01

The extensive use of zeolites and their impact on the world's economy has resulted in many efforts to characterize their structure, and improve the knowledge base for nucleation and growth of these crystals. The zeolite crystal growth (ZCG) experiment on USML-2 aimed to enhance the understanding of nucleation and growth of zeolite crystals, while attempting to provide a means of controlling the defect concentration in microgravity. Zeolites A, X, Beta, and Silicalite were grown during the 16 day - USML-2 mission. The solutions where the nucleation event was controlled yielded larger and more uniform crystals of better morphology and purity than their terrestrial/control counterparts. The external surfaces of zeolite A, X, and Silicalite crystals grown in microgravity were smoother (lower surface roughness) than their terrestrial controls. Catalytic studies with zeolite Beta indicate that crystals grown in space exhibit a lower number of Lewis acid sites located in micropores. This suggests fewer structural defects for crystals grown in microgravity. Transmission electron micrographs (TEM) of zeolite Beta crystals also show that crystals grown in microgravity were free of line defects while terrestrial/controls had substantial defects.

Vertical growth of ZnO nanorods on ZnO seeded FTO substrate for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Marimuthu, T.; Anandhan, N.

2018-04-01

Zinc oxide (ZnO) nanorods (NRs) were electrochemically grown on fluorine doped tin oxide (FTO) and ZnO seeded FTO substrates. X-ray diffraction (XRD) patterns, Raman spectra and photoluminescence (PL) spectra reveal that the hexagonal wurtzite structured ZnO grown on a seeded FTO substrate has a high crystallinity, crystal quality and less atomic defects. Felid emission scanning electron microscope (FE-SEM) images display a high growth density of NRs grown on seeded FTO substrate compared to NRs grown on FTO substrate. The efficiency of the DSSCs based on NRs grown on FTO and seeded FTO substrates is 0.85 and 1.52 %, respectively. UV-Vis absorption spectra and electrochemical impedance spectra depict that the NRs grown on seeded FTO photoanode have higher dye absorption and charge recombination resistance than that of the NRs grown on FTO substrate.

Characterization technique for detection of atom-size crystalline defects and strains using two-dimensional fast-Fourier-transform sampling Moiré method

NASA Astrophysics Data System (ADS)

Kodera, Masako; Wang, Qinghua; Ri, Shien; Tsuda, Hiroshi; Yoshioka, Akira; Sugiyama, Toru; Hamamoto, Takeshi; Miyashita, Naoto

2018-04-01

Recently, we have developed a two-dimensional (2D) fast-Fourier-transform (FFT) sampling Moiré technique to visually and quantitatively determine the locations of minute defects in a transmission electron microscopy (TEM) image. We applied this technique for defect detection with GaN high electron mobility transistor (HEMT) devices, and successfully and clearly visualized atom-size defects in AlGaN/GaN crystalline structures. The defect density obtained in the AlGaN/GaN structures is ∼1013 counts/cm2. In addition, we have successfully confirmed that the distribution and number of defects closely depend on the process conditions. Thus, this technique is quite useful for a device development. Moreover, the strain fields in an AlGaN/GaN crystal were effectively calculated with nm-scale resolution using this method. We also demonstrated that this sampling Moiré technique is applicable to silicon devices, which have principal directions different from those of AlGaN/GaN crystals. As a result, we believe that the 2D FFT sampling Moiré method has great potential applications to the discovery of new as yet unknown phenomena occurring between the characteristics of a crystalline material and device performance.

Molecule diagram from earth-grown crystals

NASA Technical Reports Server (NTRS)

2004-01-01

Like many chemicals in the body, the three-dimensional structure of insulin is extremely complex. When grown on the ground, insulin crystals do not grow as large or as ordered as researchers desire--obscuring the blueprint of the insulin molecules.

Synthesis, crystal structure, thermal and nonlinear optical properties of new metal-organic single crystal: Tetrabromo (piperazinium) zincate (II) (TBPZ)

NASA Astrophysics Data System (ADS)

Boopathi, K.; Babu, S. Moorthy; Ramasamy, P.

2018-04-01

Tetrabromo (piperazinium) zincate, a new metal-organic crystal has been synthesized and its single crystal grown by slow evaporation method. The grown crystal has characterized by structural, spectral, thermal, linear and nonlinear optical properties. Single crystal X-ray diffractions study reveals that grown crystal belongs to orthorhombic crystal system with space group P212121. The presence of functional groups is identified by FT-IR spectral analysis. Thermal stability of the crystal was ascertained by TG-DTA measurement. The second order harmonic generation efficiency was measured using Kurtz and Perry technique and it was found to be 1.5 times that of KDP.

Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)

NASA Astrophysics Data System (ADS)

Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

The influence of elevated CO2 on non-structural carbohydrate distribution and fructan accumulation in wheat canopies

NASA Technical Reports Server (NTRS)

Smart, D. R.; Chatterton, N. J.; Bugbee, B.

1994-01-01

We grew 2.4 m2 wheat canopies in a large growth chamber under high photosynthetic photon flux (1000 micromoles m-2 s-1) and using two CO2 concentrations, 360 and 1200 micromoles mol-1. Photosynthetically active radiation (400-700 nm) was attenuated slightly faster through canopies grown in 360 micromoles mol-1 than through canopies grown in 1200 micromoles mol-1, even though high-CO2 canopies attained larger leaf area indices. Tissue fractions were sampled from each 5-cm layer of the canopies. Leaf tissue sampled from the tops of canopies grown in 1200 micromoles mol-1 accumulated significantly more total non-structural carbohydrate, starch, fructan, sucrose, and glucose (p < 0.05) than for canopies grown in 360 micromoles mol-1. Non-structural carbohydrate did not significantly increase in the lower canopy layers of the elevated CO2 treatment. Elevated CO2 induced fructan synthesis in all leaf tissue fractions, but fructan formation was greatest in the uppermost leaf area. A moderate temperature reduction of 10 degrees C over 5 d increased starch, fructan and glucose levels in canopies grown in 1200 micromoles mol-1, but concentrations of sucrose and fructose decreased slightly or remained unchanged. Those results may correspond with the use of fructosyl-residues and release of glucose when sucrose is consumed in fructan synthesis.

Synthesis and structural study of 4-(2-chlorophenyl)-2-ethoxy-5,6,7,8,9,10-hexahydrocycloocta[B] pyridine-3-carbonitrile

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fathima, K. Saiadali; Vasumathi, M.; Anitha, K., E-mail: singlecrystalxrd@gmail.com

2016-05-23

The novel organic material C{sub 20}H{sub 21}ClN{sub 2}O was synthesized by One-Pot synthesis method and the single crystals were grown by slow evaporation solution growth technique. The crystal structure was elucidated by subjecting the grown crystals to the single crystal x-ray diffraction analysis and was refined by full matrix least-squares method to R=0.039 for 2746 reflections. Crystal system of the grown crystal was found to be monoclinic with the space group P2{sub 1}/a and a=9.196(4) Å, b=13.449(4) Å, c=14.818(4) Å, β= 101.542(3)°, V=1795.6(11) Å{sup 3} and Z=4. In this crystal structure, cyclooctanone prefers to reside in a chair-boat conformation. Themore » structure is stabilized by attractive molecular force such as CH/π interaction called hydrophobic interaction.« less

Ga/1-x/Al/x/As LED structures grown on GaP substrates.

NASA Technical Reports Server (NTRS)

Woodall, J. M.; Potemski, R. M.; Blum, S. E.; Lynch, R.

1972-01-01

Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

A novel structure of gel grown strontium cyanurate crystal and its structural, optical, electrical characterization

NASA Astrophysics Data System (ADS)

Divya, R.; Nair, Lekshmi P.; Bijini, B. R.; Nair, C. M. K.; Gopakumar, N.; Babu, K. Rajendra

2017-12-01

Strontium cyanurate crystals with novel structure and unique optical property like mechanoluminescence have been grown by conventional gel method. Transparent crystals were obtained. The single crystal X-ray diffraction analysis reveals the exquisite structure of the grown crystal. The crystal is centrosymmetric and has a three dimensional polymeric structure. The powder X ray diffraction analysis confirms its crystalline nature. The functional groups present in the crystal were identified by Fourier transform infrared spectroscopy. Elemental analysis confirmed the composition of the complex. A study of thermal properties was done by thermo gravimetric analysis and differential thermal analysis. The optical properties like band gap, refractive index and extinction coefficient were evaluated from the UV visible spectral analysis. The etching study was done to reveal the dislocations in the crystal which in turn explains mechanoluminescence emission. The mechanoluminescence property exhibited by the crystal makes it suitable for stress sensing applications. Besides being a centrosymmetric crystal, it also exhibits NLO behavior. Dielectric properties were studied and theoretical calculations of Fermi energy, valence electron plasma energy, penn gap and polarisability have been done.

Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy

DOE PAGES

Park, Kwangwook; Kang, Seokjin; Ravindran, Sooraj; ...

2016-12-26

Double-hetero structure lateral composition modulated (LCM) GaInP and sandwiched LCM GaInP having the same active layer thickness were grown and their optical properties were compared. Sandwiched LCM GaInP showed robust optical properties due to periodic potential nature of the LCM structure, and the periodicity was undistorted even for thickness far beyond the critical layer thickness. A thick LCM GaInP structure with undistorted potential that could preserve the properties of native LCM structure was possible by stacking thin LCM GaInP structures interspaced with strain compensating GaInP layers. Furthermore, the sandwiched structure could be beneficial in realizing the LCM structure embedded highmore » efficiency solar cells.« less

Defects in High Speed Growth of EFG Silicon Ribbon

NASA Technical Reports Server (NTRS)

Rao, C. V. H. N.; Cretella, M. C.

1984-01-01

Silicon ribbons grown by the Edge-defined Film-fed Growth (EFG) technique exhibit a characteristic defect structure typified by twins, dislocations, grain boundaries and silicon carbide inclusions. As growth speed is increased from less than 2.5 cm per minute, the structural details change. The major difference between the ribbons grown at speeds below and above 2.5 cm per minute is in the generation of a cellular structure at the higher growth speeds, observable in the ribbon cross section. The presence of the cross sectional structure leads, in general, to a reduction in cell performance. Models to explain the formation of such a cross sectional structure are presented and discussed.