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Sample records for hf-based high-k gate

  1. Hf-based high-k materials for Si nanocrystal floating gate memories

    PubMed Central

    2011-01-01

    Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices. PMID:21711676

  2. Hf-based high-k materials for Si nanocrystal floating gate memories.

    PubMed

    Khomenkova, Larysa; Sahu, Bhabani S; Slaoui, Abdelilah; Gourbilleau, Fabrice

    2011-02-24

    Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.

  3. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates

    NASA Astrophysics Data System (ADS)

    He, Gang; Chen, Xiaoshuang; Sun, Zhaoqi

    2013-03-01

    Recently, III-V materials have been extensively studied as potential candidates for post-Si complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle to implement III-V compound semiconductors for CMOS applications is the lack of high quality and thermodynamically stable insulators with low interface trap densities. Due to their excellent thermal stability and relatively high dielectric constants, Hf-based high-k gate dielectrics have been recently highlighted as the most promising high-k dielectrics for III-V-based devices. This paper provides an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. To address the impact of these hafnium based materials, their interfaces with GaAs as well as a variety of semiconductors are discussed. After that, the integration issues are highlighted, including the development of high-k deposition without Fermi level pinning, surface passivation and interface state, and integration of novel device structure with Si technology. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.

  4. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    NASA Astrophysics Data System (ADS)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  5. Process-induced positive charges in Hf-based gate stacks

    NASA Astrophysics Data System (ADS)

    Zhao, C. Z.; Zhang, J. F.; Chang, M. H.; Peaker, A. R.; Hall, S.; Groeseneken, G.; Pantisano, L.; De Gendt, S.; Heyns, M.

    2008-01-01

    Hf-based gate stacks will replace SiON as a gate dielectric even though our understanding of them is incomplete. For an unoptimized SiO2 layer, an exposure to H2 at a temperature over 450 °C can lead to positive charging. In this work, we will show that a thermal exposure of Hf-based gate stacks to H2 can also induce a large amount of positive charge (˜1013 cm-2). There is little information available on this process-induced positive charge (PIPC) and the objective of this work is to fill this knowledge gap. The work is divided into two parts: an investigation of the features and properties of PIPC, followed by an exploration of its dependence on process conditions. It will be shown that PIPC does not originate from the generation of interface states, is stable both thermally and electrically, and has a large sample-to-sample variation. It consists of two components: fixed and mobile. Regarding its dependence on process conditions, PIPC occurs in both HfO2 and Hf-silicate stacks, in devices with either TaN or poly-Si gates, and in both p metal-oxide-semiconductor field-effect transistors (pMOSFETs) and nMOSFETs. PIPC is generally enhanced by nitridation, although it can also be observed in some Hf-based gate stacks without nitridation.

  6. Reliability study of Zr and Al incorporated Hf based high-k dielectric deposited by advanced processing

    NASA Astrophysics Data System (ADS)

    Bhuyian, Md Nasir Uddin

    Hafnium-based high-kappa dielectric materials have been successfully used in the industry as a key replacement for SiO2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher kappa values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In addition, next generation devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-kappa film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al incorporated HfO 2 based high-kappa dielectrics is conducted to investigate improvement in electrical characteristics and reliability. To meet scaling requirements of the gate dielectric to sub 0.7 nm, Zr is added to HfO2 to form Hf1-xZrxO2 with x=0, 0.31 and 0.8 where the dielectric film is deposited by using various intermediate processing conditions, like (i) DADA: intermediate thermal annealing in a cyclical deposition process; (ii) DSDS: similar cyclical process with exposure to SPA Ar plasma; and (iii) As-Dep: the dielectric deposited without any intermediate step. MOSCAPs are formed with TiN metal gate and the reliability of these devices is investigated by subjecting them to a constant voltage stress in the gate injection mode. Stress induced flat-band voltage shift (DeltaVFB), stress induced leakage current (SILC) and stress induced interface state degradation are observed. DSDS samples demonstrate the superior characteristics whereas the worst degradation is observed for DADA samples. Time dependent dielectric breakdown (TDDB) shows that DSDS Hf1-xZrxO2 (x=0.8) has the superior characteristics with reduced oxygen vacancy, which is affiliated to

  7. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    NASA Astrophysics Data System (ADS)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  8. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    NASA Astrophysics Data System (ADS)

    H, Afifah Maheran A.; S, Menon P.; Ahmad, I.; Shaari, S.; Elgomati, H. A.; Salehuddin, F.

    2013-04-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO2), while the metal gate is Tungsten Silicide (WSix). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (Vth). The objective of this experiment is to minimize the variance of Vth where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  9. High performance trench MOS barrier Schottky diode with high-k gate oxide

    NASA Astrophysics Data System (ADS)

    Zhai, Dong-Yuan; Zhu, Jun; Zhao, Yi; Cai, Yin-Fei; Shi, Yi; Zheng, You-Liao

    2015-07-01

    A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

  10. In-line high-K/metal gate monitoring using picosecond ultrasonics

    NASA Astrophysics Data System (ADS)

    Hsu, C. W.; Huang, R. P.; Chen, J.; Tan, J.; Huang, H. F.; Lin, Welch; Hsieh, Y. L.; Tsao, W. C.; Chen, C. H.; Lin, Y. M.; Lin, C. H.; Hsu, H. K.; Liu, K.; Huang, C. C.; Wu, J. Y.; Dai, J.; Mukundhan, P.

    2013-04-01

    High-K/metal gate technology, introduced by Intel, to replace the conventional oxide gate dielectric and polysilicon gate has truly revolutionized transistor technology more than any other change over the last 40 years. First introduced at the 45nm node, this complex process has now been adopted for advanced nodes. The capability of picosecond ultrasonic measurements (PULSETM) for in-line monitoring of High-K/metal gate structures was evaluated and the benefits of this technology for measuring various structures including SRAM, pad array, and line array key with excellent correlation to cross sectional TEM was demonstrated. We have shown that, only a direct measurement of SRAM structures can represent true variations of the metal gate height due to CMP process and is strongly affected by the design and layout of pattern, including pattern density, dummy design, and spacing. The small spot, non-contact, non-destructive nature of this technology allows for in-line measurements directly on these structures with excellent repeatability at a very high throughput.

  11. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  12. Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Chen; Cheng, Po-Hsien; Lee, Min-Hung; Lin, Hsin-Chih; Chen, Miin-Jang

    2016-07-01

    The characteristics of cascaded high-K gate stacks with reverse dielectric sequence, TiO2/ZrO2/Al2O3 and Al2O3/ZrO2/ TiO2, on the Si substrate were investigated. The reverse sequence with different gradient bandgap structure gives rise to distinct conduction pathways, resulting in significant divergence of the leakage current density (J g) and the capacitance equivalent thickness (CET). The trapping sites in the high-permittivity TiO2 layer dominate the leakage current paths and strongly impact the conductance and the capacitance of the cascaded high-K gate stacks. Thus, a low CET of 1.05 nm and a low J g of ˜5  ×  10-4 A cm-2 were achieved due to effective suppression of the leakage current through the traps of TiO2 in the cascaded TiO2/ZrO2/Al2O3 gate stack. In addition, the TiO2 layer gets crystallized in the cascaded TiO2/ZrO2/Al2O3 structure to achieve a higher capacitance because of the intermixing between TiO2 and ZrO2 due to the different reactivity of the precursors for Ti and Zr. This study demonstrates a way to effectively incorporate the high permittivity and low-bandgap materials, such as TiO2, into high-K gate stacks, to further improve device scaling.

  13. Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Ohara, Kosuke; Yamashita, Ichiro; Yaegashi, Toshitake; Moniwa, Masahiro; Yoshimaru, Masaki; Uraoka, Yukiharu

    2009-09-01

    The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.

  14. Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

    NASA Astrophysics Data System (ADS)

    Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

    2016-09-01

    This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

  15. High-k perovskite gate oxide BaHfO3

    NASA Astrophysics Data System (ADS)

    Kim, Young Mo; Park, Chulkwon; Ha, Taewoo; Kim, Useong; Kim, Namwook; Shin, Juyeon; Kim, Youjung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2017-01-01

    We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V-1 s-1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec-1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  16. MBE and ALD grown High k Dielectrics Gate Stacks on GaN

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Lee, K. Y.; Lee, W. C.; Lin, T. D.; Lee, Y. J.; Huang, M. L.; Hong, M.; Kwo, J.; Wang, Y. H.

    2007-03-01

    III-nitride compound semiconductors are attractive for high-temperature and high-power MOSFET applications due to their intrinsic properties of wide band gap, high breakdown field, and high saturation velocity under high fields. In this work GaN-based high k MOS diodes were fabricated using MBE-grown Ga2O3(Gd2O3), MBE-grown HfO2 and ALD-grown HfO2 as the gate dielectrics with dielectric constants of 14.7, 17.4 and 16.5, respectively. All MOS diodes exhibited low leakage (<10-6 A/cm^2 at Vfb+1) and well behaved capacitance-voltage curves with a low interfacial density of states of ˜10^11 cm-2eV-1. Energy-band diagrams of the MOS structures have been determined by extracting valance-band offset (δEV) from HR-XPS and with the bandgaps of the oxides. For example, the ALD-grown HfO2-GaN at the interfaces gave approximately δEC and δEV of 1.2 eV and 1.1 eV, respectively.

  17. Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics

    NASA Astrophysics Data System (ADS)

    Grazia Monteduro, Anna; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Tasco, Vittorianna; Chaitanya Lekshmi, Indira; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D. D.; Maruccio, Giuseppe

    2016-10-01

    Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10-10 S cm-1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties.

  18. Analytical modeling of the direct tunneling current through high-k gate stacks for long-channel cylindrical surrounding-gate MOSFETs

    NASA Astrophysics Data System (ADS)

    Lina, Shi; Yiqi, Zhuang; Cong, Li; Dechang, Li

    2014-03-01

    An analytical direct tunneling gate current model for cylindrical surrounding gate (CSG) MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate's oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current. Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.

  19. Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Ajayan, J.

    2016-09-01

    This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications. Due to gate engineering in junctionless MOSFET, graded potential is obtained and results in higher electron velocity of about 31% for HfO2 than SiO2 in the channel region, which in turn improves the carrier transport efficiency. The simulation is done using sentaurus TCAD, ON current, OFF current, ION/IOFF ratio, DIBL, gain, transconductance and transconductance generation factor parameters are analysed. When using HfO2, DIBL shows a reduction of 61.5% over SiO2. The transconductance and transconductance generation factor shows an improvement of 44% and 35% respectively. The gain and output resistance also shows considerable improvement with high-k dielectrics. Using this device, inverter circuit is implemented with different high-k dielectric material and delay have been decreased by 4% with HfO2 when compared to SiO2. In addition, a significant reduction in power dissipation of the inverter circuit is obtained with high-k dielectric Dual Metal Surround Gate Junctionless Transistor than SiO2 based device. From the analysis, it is found that HfO2 will be a better alternative for the future nanoscale device.

  20. Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2016-02-01

    A physics-based analytical model for Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with high-k dielectric is presented with Evanescent Mode Analysis (EMA). The electrostatic potential is obtained using the Superposition method. An exact expression for threshold voltage and subthreshold slope is also obtained. The proposed model also includes the effect of Barrier height lowering at metal semiconductor interface along with the effect of high-k (HfO2) gate stack. Diffusion current and tunneling currents are combined to evaluate the total subthreshold current. The analytical results so obtained are compared with simulated data and they are in good agreement. The proposed model of SB-CGAA device with high-k dielectric is very useful for the design and optimization for high current and improved performance.

  1. Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Yoshida, S.; Lin, D.; Vais, A.; Alian, A.; Franco, J.; El Kazzi, S.; Mols, Y.; Miyanami, Y.; Nakazawa, M.; Collaert, N.; Watanabe, H.; Thean, A.

    2016-10-01

    We systematically studied the effects of metal electrodes on high-k/InGaAs gate stacks and observed that the remote reactions—both oxidation and reduction—at the interface between the high-k dielectrics and InGaAs were thermodynamically initiated by the metal electrodes. Metal electrodes with negative Gibbs free energies (e.g., Pd) resulted in the oxidation of the InGaAs surface during the forming-gas annealing. In contrast, with TiN electrodes, which have a positive Gibbs free energy, the native III-V oxides underwent the reduction between the high-k dielectrics and InGaAs. We demonstrated that the reduction of native III-V oxides by metal electrodes improved the interface quality of the high-k/InGaAs gate stacks and produced an interface trap density (Dit) at the mid-gap with a value as low as 5.2 × 1011 cm-2 eV-1 with a scaled capacitance-equivalent thickness.

  2. A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Q. M.

    2013-01-01

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.

  3. A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

    NASA Astrophysics Data System (ADS)

    Hsiao, Woan Yun; Mei, Chin Yu; Chao Shen, Wen; Der Chih, Yue; King, Ya-Chin; Lin, Chrong Jung

    2014-01-01

    This work presents a high density high-k metal gate (HKMG) one-time programmable (OTP) cell. Without additional processes and steps, this OTP cell is fully compatible to 28 nm HKMG CMOS process. The OTP cell adopts high-k dielectric breakdown as programming mechanism to obtain more than 105 times of on/off read window. Moreover, it features low power and fast program speed by 4.5 V program voltage in 100 µs. In addition to the ultrasmall cell area of 0.0425 µm2, the superior performance of disturb immunities and data retention further support the new logic OTP cell to be a very promising solution in advanced logic non-volatile memory (NVM) applications.

  4. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    NASA Astrophysics Data System (ADS)

    ShuXiang, Zhang; Hong, Yang; Bo, Tang; Zhaoyun, Tang; Yefeng, Xu; Jing, Xu; Jiang, Yan

    2014-10-01

    ALD HfO2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D&A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D&A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme.

  5. Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology

    NASA Astrophysics Data System (ADS)

    Dentoni Litta, Eugenio; Hellström, Per-Erik; Henkel, Christoph; Östling, Mikael

    2014-08-01

    This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500-900 °C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The results are compared to those obtained from equivalent devices integrating lanthanum silicate interfacial layers. The thulium silicate IL is formed through a gate-last CMOS-compatible process flow, providing IL EOT of 0.1-0.3 nm at low formation temperature and interface state density at flatband condition below 2 × 1011 cm-2 eV-1. The effects of a possible integration in a gate-first process flow with a maximum thermal budget of 1000 °C are also evaluated, achieving an IL EOT of 0.2-0.5 nm, an interface state density at flatband condition ∼1 × 1011 cm-2 eV-1 and a reduction in gate leakage current density of one order of magnitude compared to the same stack without IL.

  6. High K Oxide Insulated Gate Group III Nitride-Based FETs

    DTIC Science & Technology

    2014-03-21

    AND ADDRESS(ES) Kansas State University 2 Fairchild Hall Manhattan , KS 66506-1103 3. DATES COVERED (From - To) 04/05/2009-03/20/2014 5a. CONTRACT...NUMBER 5b. GRANT NUMBER N00014-09-1-1160 5c. PROGRAM ELEMENT NUMBER 5d. PROJECT NUMBER 09PRE09471-00 5e. TASK NUMBER 5f. WORK UNIT NUMBER 9...results indicate the promising potential of incorporation gate dielectric in future GaN devices. This project supported two students who completed

  7. Band Offsets of a Ruthenium Gate on Ultrathin High-k Oxide Films on Silicon

    SciTech Connect

    Rangan, S.; Bersch, W; Bartynski, R; Garfunkel, E; Vescovo, E

    2009-01-01

    Valence-band and conduction-band edges of ultrathin oxides and their shifts upon sequential metallization with ruthenium have been measured using synchrotron-radiation-excited x-ray, ultraviolet, and inverse photoemissions. From these techniques, the offsets between the valence-band and conduction-band edges of the oxides, and the ruthenium metal gate Fermi edge have been directly measured. In addition the core levels of the oxides and the ruthenium have been characterized. Upon deposition, Ru remains metallic and no chemical alteration of the underlying oxide gates, or interfacial SiO{sub 2} in the case of the high-? thin films, can be detected. However a clear shift of the band edges is measured for all samples due to the creation of an interface dipole at the ruthenium-oxide interface. Using the energy gap, the electron affinity of the oxides, and the ruthenium work function that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

  8. Band offsets of high K gate oxides on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Robertson, J.; Falabretti, B.

    2006-07-01

    III-V semiconductors have high mobility and will be used in field effect transistors with the appropriate gate dielectric. The dielectrics must have band offsets over 1eV to inhibit leakage. The band offsets of various gate dielectrics including HfO2, Al2O3, Gd2O3, Si3N4, and SiO2 on III-V semiconductors such as GaAs, InAs, GaSb, and GaN have been calculated using the method of charge neutrality levels. Generally, the conduction band offsets are found to be over 1eV, so they should inhibit leakage for these dielectrics. On the other hand, SrTiO3 has minimal conduction band offset. The valence band offsets are also reasonably large, except for Si nitride on GaN and Sc2O3 on GaN which are 0.6-0.8eV. There is reasonable agreement with experiment where it exists, although the GaAs :SrTiO3 case is even worse in experiment.

  9. Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

    NASA Astrophysics Data System (ADS)

    Xu, Miao; Zhu, Huilong; Zhang, Yanbo; Xu, Qiuxia; Zhang, Yongkui; Qin, Changliang; Zhang, Qingzhu; Yin, Huaxiang; Xu, Hao; Chen, Shuai; Luo, Jun; Li, Chunlong; Zhao, Chao; Ye, Tianchun

    2017-03-01

    In this work, we propose two threshold voltage (VTH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function (WF) layer in N-/P-FinFETs, respectively. These two methods have been investigated by TCAD simulations and MOS-capacitor experiments respectively, and then integrated into FinFET fabrication successfully. Experimental results show that the halo & PTSP doping profile can reduce VTH roll off and total variation. With P+/BF2+ doped WF layer, the VTH-sat shift -0.43 V/+1.26 V for N-FinFETs and -0.75 V/+0.11 V for P-FinFETs, respectively, with gate length of 500 nm. The proposed two methods are simple and effective for FinFET VTH tuning, and have potential for future application of massive production.

  10. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    NASA Astrophysics Data System (ADS)

    Yuan, C. L.; Chan, M. Y.; Lee, P. S.; Darmawan, P.; Setiawan, Y.

    2007-04-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al2O3 nanocrystals embedded in amorphous Lu2O3 high k dielectric using pulsed laser ablation. The mean size and density of the Al2O3 nanocrystals are estimated to be about 5 nm and 7x1011 cm-2, respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical.

  11. Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

    NASA Astrophysics Data System (ADS)

    Pavunny, S. P.; Misra, P.; Thomas, R.; Kumar, A.; Schubert, J.; Scott, J. F.; Katiyar, R. S.

    2013-05-01

    Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ˜5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm-2 eV-1) and fixed (cm-2) charge densities of ˜1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling.

  12. Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

    PubMed Central

    Henkel, C.; Abermann, S.; Bethge, O.; Pozzovivo, G.; Klang, P.; Stöger-Pollach, M.; Bertagnolli, E.

    2011-01-01

    Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. PMID:21461054

  13. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.

    PubMed

    Schulte-Braucks, C; von den Driesch, N; Glass, S; Tiedemann, A T; Breuer, U; Besmehn, A; Hartmann, J-M; Ikonic, Z; Zhao, Q T; Mantl, S; Buca, D

    2016-05-25

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.

  14. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    SciTech Connect

    Miranda, Andre

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  15. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  16. Simulation of quantum dot floating gate MOSFET memory performance using various high-k material as tunnel oxide

    NASA Astrophysics Data System (ADS)

    Aji, Adha Sukma; Darma, Yudi

    2012-06-01

    In this paper, performance of quantum dot floating gate MOSFET memory is simulated by replacing the SiO2 tunnel oxide with high-Κ material. There are three high-k material simulated in this paper, HfO2, ZrO2, and Y2O3. As we know that high-Κ material is used nowadays to reduce leakage current, so this paper demonstrates the application of high-Κ material to reduce leakage current in non-volatile memory quantum dot based floating gate MOSFET. Simulation results of this paper show the leakage current can be suppressed by using high-Κ material as tunnel oxide up to 10 times. Furthermore, this paper also shows that the memory performance can be properly sustained. The writing and erasing time are depend on tunneling current probability which calculated using transfer matrix method. The writing time and erasing time for HfO2 and ZrO2 are 150 nanosecond and 15 nanosecond.

  17. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    PubMed

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

  18. Temperature Coefficient of Threshold Voltage in High-k Metal Gate Transistors with Various TiN and Capping Layer Thicknesses

    NASA Astrophysics Data System (ADS)

    Nishida, Yukio; Eikyu, Katsumi; Shimizu, Akihiro; Yamashita, Tomohiro; Oda, Hidekazu; Inoue, Yasuo; Shibahara, Kentaro

    2010-04-01

    The temperature coefficient of Vth (=dVth/dT), which is commonly utilized for circuit design, was systematically obtained against various TiN and capping layer thicknesses in high-k/metal gate field-effect transistors (FETs). It is known that the magnitude of |dVth/dT| for such FETs is larger than that of polycrystalline silicon (poly-Si) gate FETs. The origins of the dVth/dT difference among high-k/metal gate FETs were attributed to differences in the temperature coefficient of flat band voltage (=dVFB/dT) and the equivalent gate oxide thickness (EOT). Thicker TiN layers reduced dVFB/dT, which enlarged the magnitude of |dVth/dT|. The EOT increased as the TiN metal layer or Al2O3 capping layer increased in thickness. The large EOT led to an increase in |dVth/dT|, since dVth/dT is a function of the inverse of gate capacitance. In contrast, La2O3 capping hardly affected dVth/dT. This is because La2O3 capping did not affect EOT differently from Al2O3 capping. The relationship between dVth/dT and EOT implies that EOT scaling relieves the issue of large |dVth/dT| for high-k/metal gate FETs.

  19. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses

    NASA Astrophysics Data System (ADS)

    Nishida, Yukio; Yokoyama, Shin

    2016-04-01

    The change in temperature coefficient of the threshold voltage (=dVth/dT) for poly-Si/TiN/high-k gate insulator metal-oxide-semiconductor field-effect transistors (MOSFETs) was systematically investigated with respect to various TiN thicknesses for both n- and p-channel MOSFETs. With increasing TiN thickness, dVth/dT shifts towards negative values for both n- and p-MOSFETs. A mechanism that changes dVth/dT, depending on TiN thickness is proposed. The main origins are the work function of TiN (ΦTiN) and its temperature coefficient (dΦTiN/dT). These are revealed to change when decreasing the thickness of the TiN layer, because the crystallinity of the TiN layer is degraded for thinner films, which was confirmed by ultraviolet photoelectron spectroscopy (UPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

  20. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  1. Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111)

    NASA Astrophysics Data System (ADS)

    Sim, Hyunjun; Samantaray, Chandan B.; Lee, Taeho; Yeom, Hanwoong; Hwang, Hyunsang

    2004-12-01

    In this study, the electrical and structural characteristics of Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer grown on Si(111) were investigated. Compared with control Gd2O3 gate dielectrics deposited on HF-last treated Si (111), the Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer exhibited excellent electrical characteristics such as low leakage current density and low interface state density. These characteristics are due to a high-quality interfacial layer formation on Si. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy were employed to analyze the structures of the gate dielectrics and interfacial layer. High-k gate dielectrics with an epitaxial Si3N4 interfacial layer have considerable potential for future use in sub-0.1 μm metal oxide semiconductor field-effect transistors (MOSFETs).

  2. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    NASA Astrophysics Data System (ADS)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  3. Multi-technique Approach for the Evaluation of the Crystalline Phase of Ultrathin High-k Gate Oxide Films

    NASA Astrophysics Data System (ADS)

    Bersch, E.; LaRose, J. D.; Wells, I.; Consiglio, S.; Clark, R. D.; Leusink, G. J.; Matyi, R. J.; Diebold, A. C.

    2011-11-01

    In order to continue scaling metal oxide semiconductor field effect transistors (MOSFETs) with HfO2 gate oxides, efforts are being made to further improve the deposited high-k film properties. Recently, a process whereby an HfO2 film is deposited through a series of depositions and anneals (so-called DADA process) has been shown to result in films that give rise to MOS capacitors (MOSCAPs) which are electrically scaled compared to MOSCAPs with HfO2 films that only received post deposition anneals (PDA) or no anneals. We have measured as-deposited, DADA and PDA HfO2 films using four measurement techniques, all of which are non-destructive and capable of being used for in-line processing, to evaluate their crystallinity and crystalline phases. Grazing incidence in-plane X-ray diffraction was used to determine the crystalline phases of the HfO2 films. We observed the crystalline phases of these films to be process dependent. Additionally, X-ray and UV photoelectron spectroscopy were used to show the presence of crystallinity in the films. As a fourth technique, spectroscopic ellipsometry was used to determine if the crystalline phases were monoclinic. The combination of techniques was useful in that XPS and UPS were able to confirm the amorphous nature of a 30 cycle DADA film, as measured by GIIXRD, and GIIXRD was able to help us interpret the SE data as being an indication of the monoclinic phase of HfO2.

  4. Enhanced analog performance of doping-less dual material and gate stacked architecture of junctionless transistor with high-k spacer

    NASA Astrophysics Data System (ADS)

    Amin, S. Intekhab; Sarin, R. K.

    2016-04-01

    The potential effectiveness of high-k spacer for the enhanced analog performance of doping-less dual material double-gate (DL-DMDG) junctionless transistor (JLT) is proposed. The impact of gate stacked (GS = SiO2 + high-k) architecture on DL-DMDG is also demonstrated. The charge plasma technique is used to form n + source/drain in an intrinsic silicon film by proper selection of source/drain electrode work function. The analog parameters are analyzed for DL-DMDG JLT with high-k spacer (DL-DMDG-HK) and gate stacked architecture of DL-DMDG-HK (DL-GSDMDG-HK). The results are compared with DL-DMDG JLT and its gate stacked architecture (DL-GSDMDG) JLT. The DL-DMDG-HK JLT shows improved electrostatic integrity with enhanced on-state current, transconductance (g m), early voltage (V EA) and intrinsic gain (A V ) as compared to DL-DMDG and DL-GSDMDG-JLTs. Moreover, DL-GSDMDG-HK further enhances these figures of merits (FOMs).

  5. High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

    NASA Astrophysics Data System (ADS)

    Liu, L. N.; Choi, H. W.; Xu, J. P.; Lai, P. T.

    2017-03-01

    A GaAs metal-oxide-semiconductor (MOS) capacitor using NbAlON as a gate dielectric with different Nb contents is fabricated. Experimental results show that the k value and crystallization temperature of the AlON dielectric can be improved by Nb incorporation, together with reduction in negative oxide charges. However, the interface quality and gate leakage become poorer as the Nb content increases, as confirmed by TEM and X-ray photoelectron spectroscopy results. Therefore, through comprehensively considering the advantages and disadvantages, the sample with a Nb/(Al+Nb) atomic ratio of 62.5% exhibits the best characteristics: high k value (23.3), low interface-state density (2.7 × 1012 cm-2/eV), small hysteresis (55 mV), small frequency dispersion, and low gate leakage current (2.66 × 10-5A/cm2 at Vfb + 1 V). By comparing with reported GaAs MOS devices with different high-k gate dielectrics, it can be suggested that NbAlON is a promising gate dielectric material to achieve excellent electrical performance for GaAs MOS devices.

  6. Extremely scaled high-k/In₀.₅₃Ga₀.₄₇As gate stacks with low leakage and low interface trap densities

    SciTech Connect

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO₂ and ZrO₂ gate stacks with extremely high accumulation capacitance densities of more than 5 μF/cm₂ at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm⁻²eV⁻¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO₂ and small quantities of In₂O₃, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  7. Study of Hf-Ti-O Thin Film as High- k Gate Dielectric and Application for ETSOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqiang; Zhao, Hongbin; Xiong, Yuhua; Wei, Feng; Du, Jun; Tang, Zhaoyun; Tang, Bo; Yan, Jiang

    2016-08-01

    This work focused on the metal-oxide-semiconductor (MOS) capacitor and extremely thin silicon-on-insulator (ETSOI) p-type MOS field-effect transistor ( pMOSFET) with laminated hafnium and titanium oxide (Hf-Ti-O) thin films as gate dielectric. The electrical behavior of the MOS capacitor shows that the capacitor with Hf-Ti-O gate dielectric has high performance with low equivalent oxide thickness (EOT, ~0.77 nm), small hysteresis (Δ V fb, ~4 mV), and gate current density of 0.33 A/cm2 at V g = V fb - 1 V. The dominant conduction mechanism of the Hf-Ti-O thin film (25°C to 125°C) was Schottky emission at lower gate voltage (-0.8 V to -0.2 V) and Fowler-Nordheim (F-N) tunneling at higher gate voltage (<-0.8 V). An ETSOI pMOSFET with 25 nm gate length ( L g) also exhibited good electrical properties with switch ratio of 3.2 × 104, appropriate threshold voltage of -0.16 V, maximum transconductance ( G max) of 2.63 mS, drain-induced barrier lowering of 53 mV/V, and subthreshold swing of 65 mV/dec.

  8. Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET

    NASA Astrophysics Data System (ADS)

    Gupta, Neha; Chaujar, Rishu

    2016-09-01

    This work optimizes the gate engineering scheme (both gate stack and gate metal workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire MOSFET at 300 K for improved analog and intermodulation performance. This has been done by evaluating and analyzing the metrics such as Switching Ratio, Subthreshold Swing (SS), Device Efficiency, channel and output resistance, VIP3, IIP3, 1-dB Compression Point, IMD3, HD2 and HD3. Simulation results exhibit that HfO2 as a gate stack exhibit high linearity at a comparatively low gate bias of 0.56 V with higher IIP3 (6.21 dBm) and low IMD3 (9.6 dBm). Further, the characteristics/performance is modulated by adjusting the workfunction difference of metal gate. This study demonstrates that SiNW MOSFET modeled with HfO2 as a gate stack over SiO2 interfacial layer, and gate metal workfunction difference (ΔW) of 4.4 eV can be considered as a promising potential for low power switching component in ICs and Linear RF amplifiers.

  9. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  10. W versus Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Åke; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    In this work we provide a comprehensive evaluation of a novel, low-resistance Co-Al alloy vs W to fill aggressively scaled gates with high aspect-ratios [gate height (Hgate) ˜50-60 nm, gate length (Lgate) ≥20-25 nm]. We demonstrate that, with careful liner/barrier materials selection and tuning, well-behaved devices are obtained, showing: tight gate resistance (Rgate) distributions down to Lgate˜20 nm, low threshold voltage (VT) values, comparable DC and bias temperature instability (BTI) behavior, and improved RF response. The impact of fill-metals intrinsic stress, including the presence of occasional voids in narrow W-gates, on devices fabrication and performance is also explored.

  11. Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

  12. Electric field-induced transport modulation in VO{sub 2} FETs with high-k oxide/organic parylene-C hybrid gate dielectric

    SciTech Connect

    Wei, Tingting; Kanki, Teruo E-mail: h-tanaka@sanken.osaka-u.ac.jp; Chikanari, Masashi; Tanaka, Hidekazu E-mail: h-tanaka@sanken.osaka-u.ac.jp; Fujiwara, Kohei

    2016-02-01

    We report on the observation of reversible and immediate resistance switching by high-k oxide Ta{sub 2}O{sub 5}/organic parylene-C hybrid dielectric-gated VO{sub 2} thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO{sub 2} through the electrostatic field-induced transport modulation.

  13. Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Aik Chew, Soon; Higuchi, Yuichi; Ragnarsson, Lars-Åke; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, Michael S.; Lu, Xinliang; Ganguli, Seshadri; Lei, Yu; Tang, Wei; Fu, Xinyu; Gandikota, Srinivas; Noori, Atif; Brand, Adam; Yoshida, Naomi; Thean, Aaron; Horiguchi, Naoto

    2013-04-01

    This work reports on aggressively scaled replacement metal gate, high-k last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-threshold voltage (VT) distributions for scaled NMOS devices are obtained by controlled TiN/TiAl-alloying, either by using RF-physical vapor deposition (RF-PVD) or atomic layer deposition (ALD) for TiN growth. The first technique allows optimization of the TiAl/TiN thicknesses at the bottom of gate trenches while maximizing the space to be filled with a low-resistance metal; using ALD minimizes the occurrence of preferential paths, at gate sidewalls, for Al diffusion into the high-k dielectric, reducing gate leakage (JG). For multi-gate fin field-effect transistors (FinFETs) which require smaller EWF shifts from mid-gap for low-VT: 1) conformal, lower-JG ALD-TiN/TaSiAl; and 2) Al-rich ALD-TiN by controlled Al diffusion from the fill-metal are demonstrated to be promising candidates. Comparable bias temperature instability (BTI), improved noise behavior, and slightly reduced equivalent oxide thickness (EOT) are measured on Al-rich EWF-metal stacks.

  14. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    NASA Astrophysics Data System (ADS)

    Wang, Yan-Rong; Yang, Hong; Xu, Hao; Wang, Xiao-Lei; Luo, Wei-Chun; Qi, Lu-Wei; Zhang, Shu-Xiang; Wang, Wen-Wu; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2015-11-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D&A) cycles, the D&A time, and the total annealing time. The results show that the increases of the number of D&A cycles (from 1 to 2) and D&A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D&A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D&A times and numbers of D&A cycles induce different breakdown mechanisms. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

  15. HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La2O3 FILMS GROWN ON Si AT LOW PRESSURE

    NASA Astrophysics Data System (ADS)

    Bahari, Ali; Khorshidi, Zahra

    2014-09-01

    In the present study, Ta/La2O3 films (La2O3 doped with Ta2O5) as a gate dielectric were prepared using a sol-gel method at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La2O3 films were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of films were performed using capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap, Eopt, is determined from the absorbance spectra. The obtained results show that Ta/La2O3 film as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant (≈ 25), low leakage current and wide bandgap (≈ 4.7 eV).

  16. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.

    PubMed

    Zhou, Changjian; Wang, Xinsheng; Raju, Salahuddin; Lin, Ziyuan; Villaroman, Daniel; Huang, Baoling; Chan, Helen Lai-Wa; Chan, Mansun; Chai, Yang

    2015-05-21

    MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec(-1), the high ON/OFF ratio of ∼10(8) and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm(2) V(-1) s(-1) suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications.

  17. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    NASA Astrophysics Data System (ADS)

    Sengupta, Amretashis; Sarkar, Chandan Kumar; Requejo, Felix G.

    2011-10-01

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO2-SiO2 stack (stack-1) and the other with La2O3-SiO2 stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  18. Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High-K Material as Tunnel Oxide

    NASA Astrophysics Data System (ADS)

    Aji, Adha Sukma; Nugraha, Mohamad Insan; Yudhistira; Rahayu, Fitria; Darma, Yudi

    2011-12-01

    Leakage current in nano-scale MOSFET has been calculated using variety of tunnel oxides. Firstly, this paper evaluates the leakage current in MOSFET devices when using SiO2 as tunnel oxide. When the thickness of tunnel oxide decreases into 1,4 nm, the leakage current will raise and cause power dissipation about 40 percent. Leakage current can be reduced by using high-K materials as tunnel oxides. Thicker high-K materials as tunnel oxides are easier to fabricate than SiO2 tunnel oxides with the thickness down to 1,4 nm. In term of Equivalent Oxide Thickness (EOT), using high-K materials for tunnel oxides could give the better performance as 1,4nm SiO2 which is also more simple in the fabrication. Here, we also evaluates the leakage current as the function of temperature, channel length, and oxide thickness. Computational result shows that using HfO2 to replace SiO2 as tunnel oxides can make leakage current decrease up to seven times. For practically use, HfO2 were suiTable as tunnel oxide in memory devices, particularly in quantum dot (QD) floating gate memory. In this case we use heterostructure QD consisting Si/Ge/Si as electronic storage node. The results demonstrated that the memory operation using HfO2 as tunnel oxide has a better performance rather than SiO2.

  19. Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology

    NASA Astrophysics Data System (ADS)

    Leitsmann, Roman; Lazarevic, Florian; Drescher, Maximilian; Erben, Elke

    2017-06-01

    We have carried out a combined experimental and theoretical study on the influence of lanthanum, nitrogen, and fluorine treatments on the electric properties of high-k metal gate (HKMG) devices. In particular, we have developed a theoretical gate stack model which is able to predict qualitatively and quantitatively the influence of nitrogen, fluorine, and lanthanum treatments on the characteristic electric properties of Si-SiON-HfO2 gate stacks. The combination of this theoretical model with experimental investigations of several differently treated HKMG devices allows the estimation of the amount of incorporated impurity atoms in different material layers. Furthermore, we propose an atomistic mechanism for the incorporation of lanthanum and fluorine impurity atoms and we can explain the results of recent leakage current measurements by a passivation of oxygen vacancies within the HfO2 layer.

  20. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.

    PubMed

    Yeom, Donghyuk; Keem, Kihyun; Kang, Jeongmin; Jeong, Dong-Young; Yoon, Changjoon; Kim, Dongseung; Kim, Sangsig

    2008-07-02

    Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I(on)/I(off) ratios were as high as ∼10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

  1. Electric Field-induced Resistance Switching in VO2 Channels using Hybrid Gate Dielectric of High- k Ta2O5/Organic material Parylene-C

    NASA Astrophysics Data System (ADS)

    Wei, Tingting; Kanki, Teruo; Fujiwara, Kohei; Chikanari, Masashi; Tanaka, Hidekazu

    Electrostatic approach utilizing field-effect transistor (FET) with correlated electron materials provides an avenue to realize the novel devices (Mott-transistor) and to clarify condensed matter physics. In this study, we have prepared Mott-transistors using vanadium dioxide (VO2) channels and employed hybrid gate dielectric consisted of high- k material Ta2O5 and organic polymer parylene-C to trigger carrier transport modulation in VO2. Obvious resistance modulations were observed in insulating regime through time-dependent resistance measurement at varied square-shaped gate bias (VG) . Contrasting to the hysteretic response in electric double layer transistor (EDLT), an abrupt resistance switching in less than of 2-second-interval enables us to attribute such immediate modulation to pure electrostatic effect. Moreover, the maximum of resistance change was identified to appear around phase transition temperature (TMI) , which confirmed the disordered heterogeneous regime at TMI. Taking advantage of systematic modulation using VO2-based devices, we demonstrated the pronounced shifts of TMI by gate bias. Another fascinating behavior on asymmetric drop in TMI by hole-electron carrier doping was observed.

  2. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges.

    PubMed

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-04-23

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO(2) gate insulator. When a HfO(2) layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 microm is 11% of the quantum conductance 4e(2)/h. The contact resistance for electron current is estimated to be 14 kOmega. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO(2) and SiO(2) layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  3. Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

    NASA Astrophysics Data System (ADS)

    Desbiens, E.; Dolbec, R.; El Khakani, M. A.

    2002-05-01

    We have successfully developed two reactive pulsed laser deposition (PLD) processes for the growth of high-k SiO2 and SiOxNy thin films. At a KrF laser intensity of 3×108 W/cm2, both SiO2 and SiOxNy films have been deposited by ablating a silicon target in a reactive gas atmosphere (O2 and O2/N2 mixture, respectively) on both Si (100) and Pt-coated Si substrates. Two key issues are presented here, namely (i) the effect of the deposition temperature (Td in the 20-450 °C range) and (ii) the effect of the N incorporation (in the 0.3-20 at. % concentration range) on the microstructure and electrical properties of PLD SiO2 and SiOxNy thin films, respectively. For the PLD-SiO2 films, 300 °C has been identified as the optimal deposition temperature that yields stoichiometric ([O]/[Si]~1.9), hydrogen-free films with a low local disorder, a highly dense microstructure and a dielectric constant (k) higher than that quoted for thermally grown SiO2. On the other hand, the PLD SiOxNy films containing 20 at. % of N have exhibited a dielectric constant as high as ~7. A rather good agreement is obtained between the k values deduced from the Poole-Frenkel emission (PFE) model and those obtained from direct impedance measurements, confirming thereby that the PFE remains the predominant conduction mechanism in the PLD SiOxNy films.

  4. Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal-Oxide-Semiconductor Technology

    NASA Astrophysics Data System (ADS)

    Han, Jin-Ping; Shimizu, Takashi; Pan, Li-Hong; Voelker, Moritz; Bernicot, Christophe; Arnaud, Franck; Mocuta, Anda; Stahrenberg, Knut; Azuma, Atsushi; Eller, Manfred; Yang, Guoyong; Jaeger, Daniel; Zhuang, Haoren; Miyashita, Katsura; Stein, Kenneth; Nair, Deleep; Hoo Park, Jae; Kohler, Sabrina; Hamaguchi, Masafumi; Li, Weipeng; Kim, Kisang; Chanemougame, Daniel; Kim, Nam Sung; Uchimura, Sadaharu; Tsutsui, Gen; Wiedholz, Christian; Miyake, Shinich; van Meer, Hans; Liang, Jewel; Ostermayr, Martin; Lian, Jenny; Celik, Muhsin; Donaton, Ricardo; Barla, Kathy; Na, MyungHee; Goto, Yoshiro; Sherony, Melanie; Johnson, Frank S.; Wachnik, Richard; Sudijono, John; Kaste, Ed; Sampson, Ron; Ku, Ja-Hum; Steegen, An; Neumueller, Walter

    2011-04-01

    High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “freely” with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance Gm, conductance Gds, Gm/Id, mismatching (MM) behavior, flicker noise (1/f noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., Ion-Ioff, Ioff-Vtsat, DIBL, Cjswg) and reliability (HCI) have also shown the comparability of HPA devices over control.

  5. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  6. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    PubMed Central

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V−1s−1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  7. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.

    PubMed

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-05-25

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm(2)V(-1)s(-1) coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering.

  8. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-05-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V-1s-1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering.

  9. Effects of gate stack structural and process defectivity on high-k dielectric dependence of NBTI reliability in 32 nm technology node PMOSFETs.

    PubMed

    Hussin, H; Soin, N; Bukhori, M F; Hatta, S Wan Muhamad; Wahab, Y Abdul

    2014-01-01

    We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E' center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2) and hafnium oxide (HfO2) layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  10. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    PubMed Central

    Hussin, H.; Soin, N.; Bukhori, M. F.; Wan Muhamad Hatta, S.; Abdul Wahab, Y.

    2014-01-01

    We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2) and hafnium oxide (HfO2) layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated. PMID:25221784

  11. Physical Characterization of Novel Metal Electrodes for Hf-based Transistors

    SciTech Connect

    Lysaght, P.S.; Wen, H.-C.; Choi, K.; Senzaki, Y.; Majhi, P.; Alshareef, H.; Harris, R.; Luan, H.; Lian, G.; Campin, M.; Clark, M.; Foran, B.; Lee, B.-H.

    2005-09-09

    Metal electrode materials are being extensively evaluated as potential replacements for polysilicon in order to eliminate gate depletion, reduce gate resistance, overcome equivalent oxide thickness (EOT) scaling limitations and Fermi level pinning effects associated with the reaction between Hf-based dielectric films and the polysilicon electrode. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) using X-ray spectra and electron energy loss spectra (EELS) were used to produce elemental profiles of dielectric and metal electrode constituents with particular emphasis on interfacial interactions. High spatial resolution chemical scan profiles of silicon, oxygen, nitrogen, and hafnium from the dielectric components in conjunction with various transition metals including hafnium, tantalum, molybdenum and ruthenium have been acquired to characterize the extent of material intermixing and crystallization as a function of deposition parameters and anneal temperature. The influence of the atomic percent Si in ternary compounds consisting of transition metal nitrides is presented within the context of Rutherford backscattering (RBS) composition data. Finally, factors influencing metal workfunction are presented based on physical and electrical characterization of high-k capacitors and transistors.

  12. Characterization of ALD Beryllium Oxide as a Potential High- k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

    NASA Astrophysics Data System (ADS)

    Johnson, Derek W.; Yum, Jung Hwan; Hudnall, Todd W.; Mushinski, Ryan M.; Bielawski, Christopher W.; Roberts, John C.; Wang, Wei-E.; Banerjee, Sanjay K.; Harris, H. Rusty

    2014-01-01

    The chemical and electrical characteristics of atomic layer deposited (ALD) beryllium oxide (BeO) on GaN were studied via x-ray photoelectron spectroscopy, current-voltage, and capacitance-voltage measurements and compared with those of ALD Al2O3 and HfO2 on GaN. Radiofrequency (RF) and power electronics based on AlGaN/GaN high-electron-mobility transistors are maturing rapidly, but leakage current reduction and interface defect ( D it) minimization remain heavily researched. BeO has received recent attention as a high- k gate dielectric due to its large band gap (10.6 eV) and thermal stability on InGaAs and Si, but little is known about its performance on GaN. Unintentionally doped GaN was cleaned in dilute aqueous HCl immediately prior to BeO deposition (using diethylberyllium and H2O precursors). Formation of an interfacial layer was observed in as-deposited samples, similar to the layer formed during ALD HfO2 deposition on GaN. Postdeposition anneal (PDA) at 700°C and 900°C had little effect on the observed BeO binding state, confirming the strength of the bond, but led to increased Ga oxide formation, indicating the presence of unincorporated oxygen in the dielectric. Despite the interfacial layer, gate leakage current of 1.1 × 10-7 A/cm2 was realized, confirming the potential of ALD BeO for use in low-leakage AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors.

  13. Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs

    SciTech Connect

    Cao, Yan-Qiang; Li, Xin; Zhu, Lin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-15

    The thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs were investigated. Compared to HfO{sub 2}/Al{sub 2}O{sub 3} gate dielectric, significant improvements in interfacial quality as well as electrical characteristics after postdeposition annealing are confirmed by constructing HfO{sub 2}/AlN dielectric stacks. The chemical states were carefully explored by the x-ray photoelectron spectroscopy, which indicates the AlN layers effectively prevent from the formation of defective native oxides at elevated temperatures. In addition, it is found that NH{sub 3} plasma during AlN plasma-enhanced atomic layer deposition also has the self-cleaning effect as Al(CH{sub 3}){sub 3} in removing native oxides. The passivating AlN layers suppress the formation of interfacial oxide and trap charge, leading to the decrease of capacitance equivalent thickness after annealing. Moreover, HfO{sub 2}/AlN/GaAs sample has a much lower leakage current density of 2.23 × 10{sup −4} A/cm{sup 2} than HfO{sub 2}/Al{sub 2}O{sub 3}/GaAs sample of 2.58 × 10{sup −2} A/cm{sup 2}. For the HfO{sub 2}/AlN/GaAs sample annealed at 500 °C, it has a lowest interface trap density value of 2.11 × 10{sup 11} eV{sup −1} cm{sup −2}. These results indicate that adopting HfO{sub 2}/AlN dielectric stacks may be a promising approach for the realization of high quality GaAs-based transistor devices.

  14. Impact of nitrogen concentration on the performance of LaAlO3(1-y/2)Ny films for high-k gate dielectric applications

    NASA Astrophysics Data System (ADS)

    Shi, G. H.; Lu, X. B.; Kong, X. K.; Liu, Z. G.

    2005-02-01

    A series of LaAlO3(1-y/2)Ny (LAON) films with different nitrogen concentrations have been prepared by pulsed laser deposition on Pt-coated silicon substrates and directly on hydrogen terminated Si (100) substrates using LaAlO3(1-y/2)Ny ceramic targets with y = 0, 0.2, 0.4, 0.8 and 1, respectively. All the films as deposited at a substrate temperature of 600°C and in 20 Pa nitrogen ambient have amorphous structures. Their crystallization temperatures are not less than 845°C. For ease of comparison, all the films are deposited under the same deposition conditions and all the films deposited on hydrogen terminated silicon (100) substrates have the same physical thickness of 9 nm. The dielectric constant of the materials as well as the equivalent oxide thickness (EOT) and the leakage current density of the Pt/LAON/Si structures as functions of nitrogen concentration of the films were studied systematically and determined. It is found that with a dielectric constant of 33, an EOT of 2 nm and a leakage current density of 11.5 mA cm-2 at 1 V, the LAON films with y = 0.4 exhibited optimal properties for high-k gate dielectric applications. The reasons for the excellent performance of the films with this nitrogen concentration were discussed.

  15. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    SciTech Connect

    Kanashima, T. Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K.; Nohira, H.

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  16. Dual Metal/High-k Gate-Last Complementary Metal-Oxide-Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness

    NASA Astrophysics Data System (ADS)

    Kikuchi, Yoshiaki; Wakabayashi, Hitoshi; Tsukamoto, Masanori; Nagashima, Naoki

    2011-08-01

    For the first time, dual metal/high-k gate-last complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs) with low-dielectric-constant-material offset spacers and several gate oxide thicknesses were fabricated to improve CMOSFETs characteristics. Improvements of 23 aF/µm in parasitic capacitances were confirmed with a low-dielectric-constant material, and drive current improvements were also achieved with a thin gate oxide. The drive currents at 100 nA/µm off leakages in n-type metal-oxide-semiconductor (NMOS) were improved from 830 to 950 µA/µm and that in p-type metal-oxide-semiconductor (PMOS) were from 405 to 450 µA/µm with a reduction in gate oxide thickness. The thin gate oxide in PMOS was thinner than that in NMOS and the gate leakage was increased. However the gate leakage did not affect the off leakage below a gate length of about 44 nm. On the basis of this result, in these gate-last CMOSFETs, it is concluded that the transistors have potential for further reduction of the equivalent oxide thickness without an increase in off leakages at short gate lengths for high off leakage CMOSFETs. For low off leakage CMOSFETs, the optimization of wet process condition is needed to prevent the reduction of the 2 nm HfO2 thickness in PMOS during a wet process.

  17. Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Hong, Peizhen; Liu, Jinbiao; Yin, Huaxiang; Yin, Haizhou; Ma, Xiaolong; Cui, Hushan; Lu, Yihong; Meng, Lingkuan; Xiang, Jinjuan; Zhong, Huicai; Zhu, Huilong; Xu, Qiuxia; Li, Junfeng; Yan, Jian; Zhao, Chao; Radamson, Henry H.

    2016-09-01

    In this paper, the technology of recessed embedded SiGe (e-SiGe) source/drain (S/D) module is optimized for the performance enhancement in 22 nm all-last high-k/metal-gate (HK/MG) pMOSFETs. Different Si recess-etch techniques were applied in S/D regions to increase the strain in the channel and subsequently, improve the performance of transistors. A new recess-etch method consists of a two-step etch method is proposed. This process is an initial anisotropic etch for the formation of shallow trench followed by a final isotropic etch. By introducing the definition of the upper edge distance (D) between the recessed S/D region and the channel region, the process advantage of the new approach is clearly presented. It decreases the value of D than those by conventional one-step isotropic or anisotropic etch of Si. Therefore, the series resistance is reduced and the channel strain is increased, which confirmed by the simulation results. The physical reason of D reducing is analyzed in brief. Applying this recess design, the implant conditions for S/D extension (SDE) are also optimized by using a two-step implantation of BF2 in SiGe layers. The overlap space between doping junction and channel region has great effect on the device's performance. The designed implantation profile decreases the overlap space while keeps a shallow junction depth for a controllable short channel effect. The channel resistance as well as the transfer ID-VG curves varying with different process conditions are demonstrated. It shows the drive current of the device with the optimized SDE implant condition and Si recess-etch process is obviously improved. The change trend of on-off current distributions extracted from a series of devices confirmed the conclusions. This study provides a useful guideline for developing high performance strained PMOS SiGe technology.

  18. Low-Frequency Noise of Strained and Non-Strained n-Channel Tri-Gate FinFETs With Different Gate Dielectrics

    NASA Astrophysics Data System (ADS)

    Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, E.; Claeys, C.

    2009-04-01

    The influence of different front gate Hf-based high-k dielectrics (HfSiON/SiO2 and HfO2/SiO2) on the shape of the low-frequency noise spectra for n-channel tri-gate FinFETs processed in standard silicon-on-insulator (SOI) substrates, and global Strained Si Directly On Insulator (sSOI) wafers with/without Selective Epitaxial Grown (SEG) source and drain regions is studied. For different process splits the concentration distributions of slow traps over the thickness of the gate dielectric are estimated and it is shown that these distributions depend on the dielectric type.

  19. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    SciTech Connect

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-04-25

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  20. The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-k Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications

    NASA Astrophysics Data System (ADS)

    Lee, Bongmook; Novak, Steven R.; Biswas, Nivedita; Misra, Veena

    2012-01-01

    It was found that the structural properties with gadolinium (Gd) and europium (Eu) incorporation into nickel (Ni) fully silicided (FUSI) gate electrodes are markedly different and resulted in different degrees of effective work function modulation. It was found that Ni-Gd alloys tend to form stable compounds during silicidation and produced a Si-rich layer with amorphous/nanocystalline structure near the FUSI gate electrode/high-k dielectric interface. This compositional and structural change is the main mechanism responsible for effective work function modulation with Gd incorporation. However, in the case of Europium, Eu atoms tend to segregate outside the Ni-FUSI layer during silicidation and resulted in a uniform NixSiy layer with Eu pile-up layer at the FUSI gate electrode/high-k dielectric interface. This pile-up is believed to be the main cause of effective work function modulation with Eu incorporation. It was also found that the incorporation of Gd and Eu metals into Ni-FUSI gate can remotely scavenge the interfacial oxide layer resulting in lower equivalent oxide thickness (EOT) of the device.

  1. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti

    NASA Astrophysics Data System (ADS)

    Huoxi, Xu; Jingping, Xu

    2016-06-01

    LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1 × 1011 eV-1 cm-2), gate leakage property (3.6 × 10-3 A/cm2 at V g = 1 V + V fb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials. Project supported by the National Natural Science Foundation of China (No. 61274112), the Natural Science Foundation of Hubei Province (No. 2011CDB165), and the Scientific Research Program of Huanggang Normal University (No. 2012028803).

  2. Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal-gate metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tsai, Jung-Ruey; Juan, Pi-Chun; Lin, Cheng-Li; Lin, Guo-Cheng

    2017-01-01

    Metal-gate TiN/ZrN/ZrHfO/p-Si metal-insulator-semiconductor (MIS) structures have been fabricated in this work. The physical and electrical properties were characterized. The crystallization of high-k ZrHfO thin-film is induced by high power impulse magnetron sputtering (HIPIMS) during the deposition of ZrN capping layer. The binding energies and depth profiles were investigated by X-ray photoelectron spectroscopy (XPS). It is found that Zr and Hf out-diffusion from high-k dielectric in samples with HIPIMS is lesser than those in samples with the conventional DC magnetron sputtering (DCMS). The dielectric constant which strongly relates to the tetragonal phase becomes higher and the flatband voltage shift shows smaller by using the HIPIMS method than by the conventional DCMS. The cation and anion vacancies have been investigated by the defect reaction model.

  3. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high- k LaTiON gate dielectric

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Chan, C. L.; Lai, P. T.

    2010-06-01

    Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La2O3 ratio, a suitable Ti/La2O3 ratio of 14.7% results in a high relative permittivity of 24.6, low interface-state density of 3.1×1011 eV-1 cm-2, and relatively low gate-leakage current density of 2.0×10-3 A cm-2 at a gate voltage of 1 V.

  4. Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

    SciTech Connect

    Kao, Tsung-Hsien; Chang, Shoou-Jinn Fang, Yean-Kuen; Huang, Po-Chin; Wu, Chung-Yi; Wu, San-Lein

    2014-08-11

    In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.

  5. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

    NASA Astrophysics Data System (ADS)

    Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

    2017-07-01

    In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

  6. The role of ZrN capping layer deposited on ultra-thin high-k Zr-doped yttrium oxide for metal-gate metal–insulator–semiconductor applications

    SciTech Connect

    Juan, Pi-Chun; Mong, Fan-Chen; Huang, Jen-Hung

    2013-08-28

    Metal-gate MIS structures with and without ZrN capping layer on high-k Y{sub 2}O{sub 3}:Zr/Y{sub 2}O{sub 3} stack were fabricated. The binding energies and depth profiles were investigated by x-ray photoelectron spectroscopy (XPS). The x-ray diffraction (XRD) patterns were compared. It is found that Ti out-diffusion into Zr-based high-k dielectric becomes lesser with the insertion of ZrN capping layer. The electrical properties of current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured in the postannealing temperature range of 550–850 °C. According to the defect reaction model, Zr cation vacancies are associated with the concentration of Ti ion by a transition from +3 to +2 states. The amount of Zr cation vacancies is quantified and equal to a half of Ti substitution amount at Zr site. The reduction in cation vacancies at high temperatures can well explain the decrease in ΔV{sub FB} for samples with ZrN layer. In contrast, an excess of Ti outdiffusion will produce the interstitial defects in high-k films without ZrN capping.

  7. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Chen; Lee, Min-Hung; Kuo, Chin-Lung; Lin, Hsin-Chih; Chen, Miin-Jang

    2016-11-01

    Amorphous and crystalline ZrO2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (Jg) of ∼7 × 10-4 A/cm2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiOxNy in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar Jg of ∼1.4 × 10-5 A/cm2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO2 is an effective approach to scale the CET and Jg, as well as to improve the reliability.

  8. Memory and negative-resistance effects in a strained metal-gate high-k n-type field-effect-transistor from 375 K down to 77 K

    NASA Astrophysics Data System (ADS)

    Gutiérrez-D, E. A.; Vega-G, V. H.; García-R, P. J.; Huerta-G, O. V.

    2016-12-01

    We introduce an experimental alternative way of looking into the charging and discharging mechanism inside a high-k stacked oxide of a metal-gate strained n-type Field-Effect-Transistor (nFET). This alternative way reproduces a memory and negative resistance effect by biasing the nFET device in a non-conventional way. This is achieved by forward-biasing the drain-bulk junction and by setting the gate electrode in a high-impedance mode. The produced negative resistance effect (NRE) has a controllable peak-to-valley current ratio (PVCR) that goes from about 3.0 up to a value of 5.5 at room temperature. The PVCR increases up to 8.35 at T = 225 K and reduces to 2.84 at T = 375 K in a linear trend. The memory effect is observed when the drain-bulk junction voltage is swept from low to high values and back from high to low values. From low to high forward drain-bulk bias the NRE shows up and vanishes when coming back from high to low forward drain-bulk bias. The NRE and memory effects are attributed to a coupled-gate oxide charging/discharging mechanism with an induced bipolar transistor action in the channel of the FET.

  9. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

    NASA Astrophysics Data System (ADS)

    Chatterjee, Sulagna; Chattopadhyay, Sanatan

    2016-10-01

    An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

  10. Characterization of hafnium based high-k thin films for solid state transistor gate application deposited by CVD and PECVD using hafnium(IV) tert-butoxide

    NASA Astrophysics Data System (ADS)

    Bhandari, Harish Babu

    Silicon dioxide, the standard gate oxide in MOS transistors for the last three decades, has reached its scaling limit due to an unacceptably high tunneling current at thicknesses < 1.0 nm. Hafnium oxide (HfO 2) and hafnium silicate (HfSixOy), based on their high dielectric constants and thermodynamic stability on Si, are the two most promising materials to replace SiO2 as a gate oxide. Metalorganic chemical vapor deposition (MOCVD) of HfO2 and HfSixO y, and their characterization, has been studied to better understand their physical and chemical properties to suit their application as a high-kappa replacement to SiO2. Hafnium oxide and HfSixOy thin films were deposited in a custom built PECVD reactor on Si (100) using hafnium (IV) tert-butoxide (HTB), oxygen and silane at substrate temperatures of 30°, 150°, 250° and 410°C. The thermally and plasma deposited HfSixOy films showed a composition of (HfO2)0.84(SiO 2)0.16 and (HfO2)0.11(SiO2) 0.88, respectively. Plasma silicates demonstrated higher silicon (˜24 at.%) incorporation due to better dissociation of SiH4 and HTB. HfO2 and HfSixOy films were also deposited with different oxygen precursors (O2, N2O, H2O, O2 plasma, or N2O plasma). Thermally deposited HfSi xOy films using O2 and N2O showed precursor desorption at higher temperatures resulting in lower deposition rates, whereas the H2O deposited film showed a decrease in deposition rate with temperature, suggesting a different mechanism. In situ ATR-FTIR was conducted on adsorbed and liquid HTB to study the reaction pathway of the HTB molecule during CVD reaction. By comparing experimental ATR-FTIR spectra with theoretical frequencies calculated using density functional theory, it was concluded that the HTB molecule undergoes chemisorptive adsorption at 100°C and bridges to Si via a bidentate attachment. Angle-resolved XPS measurements were performed for HfO2/Si (100) samples placed in wet and dry environments to study the effect of H 2O on interface

  11. Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

    NASA Astrophysics Data System (ADS)

    Kim, Young-Hee

    Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is

  12. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  13. Surface and Interface Chemistry for Gate Stacks on Silicon

    NASA Astrophysics Data System (ADS)

    Frank, M. M.; Chabal, Y. J.

    This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

  14. Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Lai, P. T.

    2010-07-01

    The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO2/LaON or HfO2/La2O3 stacked gate dielectric (LaON or La2O3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeOx interlayer and improving the dielectric/Ge interface quality.

  15. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Yu, Ai-Fang; Qi, Qiong; Jiang, Peng; Jiang, Chao

    2009-07-01

    Carrier mobility enhancement from 0.09 to 0.59 cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  16. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

    NASA Astrophysics Data System (ADS)

    Ohta, A.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2013-03-01

    Effect of incorporating a third element into HfO2 on the electronic structures has been studied by high resolution x-ray photoelectron spectroscopy (XPS). Hf-IIIa (La, Y, Gd, and Dy) oxide and Hf-Ti oxide films were deposited on a Pt layer by metal organic chemical vapor deposition (MOCVD) and co-sputtering and followed by post-deposition annealing in O2 ambience at 500°C. The energy bandgap (Eg) of these Hf-based oxide films was determined by analyzing the energy loss spectra of O 1s photoelectrons in consideration of the overlap with Hf 4s core-line signals. From analyses of the valence band signals and the cut-off energy for photoelectrons, the valence band offset between the Hf based-oxide, and the Pt electrode and the work function value of the Pt layer were evaluated. By combining the oxide bandgap values, the valence band line-ups, and the Pt work function value, the energy band profile of the Hf-based oxide/Pt has been determined.

  17. Dielectric relaxation of high-k oxides

    PubMed Central

    2013-01-01

    Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary. PMID:24180696

  18. Charge Trapping Flash Memory With High-k Dielectrics

    NASA Astrophysics Data System (ADS)

    Eun, Dong Seog

    2011-12-01

    High capacity and affordable price of flash memory make portable electronic devices popular, which in turn stimulates the further scaling down effort of the flash memory cells. Indeed the flash memory cells have been scaling down aggressively and face several crucial challenges. As a result, the technology trend is shifting from the floating-gate cell to the charge-trap cell in order to overcome fatal interference problems between cells. There are critical problems in the charge-trap memory cell which will become main-stream in the near future. The first potential problem is related to the memory retention which is degraded by the charge leakage through thin tunnel dielectrics. The second is the reduction of charge-storage capacity in the scaled down SiN trapping layer. The third is the low operation-efficiency resulting from the methods used to solve the first two problems. Using high-k tunnel dielectrics can solve the first problem. The second problem can be overcome by adopting a high-k trapping dielectric. The dielectric constant of the blocking layer must be higher than those of the tunnel dielectric and the trapping dielectric in order to maintain operation efficiency. This dissertation study is focused on adopting high-k dielectrics in all three of the aforementioned layers for figure generations of flash memory technology. For the high-k tunnel dielectric, the MAD Si3N4 and the MAD Al2O3 are used to fabricate the MANNS structure and the MANAS structure. The MANNS structure has the advantage of reducing the erase voltage due to its low barrier height for holes. In addition, the retention characteristic of the MANAS structure is not sensitive to temperature. The reason is that the carrier transport in MAD Al2O3 is dominated by F-N tunneling, which is nearly independent of temperature. Adopting TiOx as the trapping dielectric forms the MATAS structure. Although the charge capacity of TiOx is not very high, the operating voltage can be reduced to less than 10V

  19. Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2014-02-28

    Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

  20. Volatiles in High-K Lunar Basalts

    NASA Technical Reports Server (NTRS)

    Barnes, Jessica J.; McCubbin, Francis M.; Messenger, Scott R.; Nguyen, Ann; Boyce, Jeremy

    2017-01-01

    Chlorine is an unusual isotopic system, being essentially unfractionated ((delta)Cl-37 approximately 0 per mille ) between bulk terrestrial samples and chondritic meteorites and yet showing large variations in lunar (approximately -4 to +81 per mille), martian, and vestan (HED) samples. Among lunar samples, the volatile-bearing mineral apatite (Ca5(PO4)3[F,Cl,OH]) has been studied for volatiles in K-, REE-, and P (KREEP), very high potassium (VHK), low-Ti and high-Ti basalts, as well as samples from the lunar highlands. These studies revealed a positive correlation between in-situ (delta)Cl-37 measurements and bulk incompatible trace elements (ITEs) and ratios. Such trends were interpreted to originate from Cl isotopic fractionation during the degassing of metal chlorides during or shortly after the differentiation of the Moon via a magma ocean. In this study, we investigate the volatile inventories of a group of samples for which new-era volatile data have yet to be reported - the high-K (greater than 2000 ppm bulk K2O), high-Ti, trace element-rich mare basalts. We used isotope imaging on the Cameca NanoSIMS 50L at JSC to obtain the Cl isotopic composition [((Cl-37/(35)Clsample/C-37l/(35)Clstandard)-1)×1000, to get a value in per thousand (per mille)] which ranges from approximately -2.7 +/- 2 per mille to +16.1 +/- 2 per mille (2sigma), as well as volatile abundances (F & Cl) of apatite in samples 10017, 10024 & 10049. Simply following prior models, as lunar rocks with high bulk-rock abundances of ITEs we might expect the high-K, high-Ti basalts to contain apatite characterized by heavily fractionated (delta)Cl-37 values, i.e., Cl obtained from mixing between unfractionated mantle Cl (approximately 0 per mille) and the urKREEP reservoir (possibly fractionated to greater than +25 per mille.). However, the data obtained for the studied samples do not conform to either the early degassing or mixing models. Existing petrogentic models for the origin of the high-K

  1. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  2. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  3. Multilayer filter design with high K materials

    NASA Astrophysics Data System (ADS)

    Curtis, Nathaniel, II

    A novel approach to filter design is presented. A high-K multilayer coupled line filter is designed for optimal performance within a dielectric resonator of rectangular cross section. The multilayer filter is shown to have a performance comparable to its planar counterpart as well as the Lange coupler while maintaining the design advantages that come with the multilayer approach to filter design such as increased flexibility in managing parameter constraints. The performance of the rectangular cross sectioned resonator in terms of modal response and resonant frequency has been evaluated through mathematical derivation and simulation. The reader will find the step by step process to designing the resonant structure as well as a MATLAB script that will graphically display the effect changing various parameters may have on resonator size to assist in the design analysis. The resonator has been designed to provide a finite package in terms of space and performance so that it may house the multilayer filter on a printed circuit board for ease of system implementation. The proposed design with analysis will prove useful for all multilayer coupled line filter types that may take advantage of the uniform environment provided by the finite packaging of the dielectric resonator. As with any microwave system, considerable effort must be put forth to maintain signal integrity throughout the delivery process from the signal input to reception at the output. As a result a large amount of effort and research has gone into answering the question of how to efficiently feed both a dielectric resonator filter of rectangular cross section as well as a coupled line filter that would be embedded within the resonators confines. Several methods for feeding have been explored and reported on. Of the feeding methods reported on the most feasible design includes a unique microstrip delivery to the embedded multilayer filter as pictured here.* *Please refer to dissertation for diagram.

  4. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  5. Hard magnetic property enhancement of Co7Hf-based ribbons by boron doping

    NASA Astrophysics Data System (ADS)

    Chang, H. W.; Liao, M. C.; Shih, C. W.; Chang, W. C.; Yang, C. C.; Hsiao, C. H.; Ouyang, H.

    2014-11-01

    Hard magnetic property enhancement of melt spun Co88Hf12 ribbons by boron doping is demonstrated. B-doping could not only remarkably enhance the magnetic properties from energy product ((BH)max) of 2.6 MGOe and intrinsic coercivity (iHc) of 1.5 kOe for B-free Co88Hf12 ribbons to (BH)max = 7.7 MGOe and iHc = 3.1 kOe for Co85Hf12B3 ribbons but also improve the Curie temperature (TC) of 7:1 phase. The (BH)max value achieved in Co85Hf12B3 ribbons is the highest in Co-Hf alloy ribbons ever reported, which is about 15% higher than that of Co11Hf2B ribbons spun at 16 m/s [M. A. McGuire, O. Rios, N. J. Ghimire, and M. Koehler, Appl. Phys. Lett. 101, 202401 (2012)]. The structural analysis confirms that B enters the orthorhombic Co7Hf (7:1) crystal structure as interstitial atoms, forming Co7HfBx, in the as-spun state. Yet B may diffuse out from the 7:1 phase after post-annealing, leading to the reduction of Curie temperature and the magnetic properties. The uniformly refined microstructure with B-doping results in high remanence (Br) and improves the squareness of demagnetization curve. The formation of interstitial-atom-modified Co7HfBx phase and the microstructure refinement are the main reasons to give rise to the enhancement of hard magnetic properties in the B-containing Co7Hf-based ribbons.

  6. Ternary rare-earth metal oxide high-k layers on silicon oxide

    SciTech Connect

    Zhao, C.; Witters, T.; Brijs, B.; Bender, H.; Richard, O.; Caymax, M.; Heeg, T.; Schubert, J.; Afanas'ev, V.V.; Stesmans, A.; Schlom, D.G.

    2005-03-28

    Ternary oxides, GdScO{sub 3}, DyScO{sub 3}, and LaScO{sub 3}, deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied as alternative high-k gate dielectrics on (100) Si. Their physical characterization was done using Rutherford backscattering, spectroscopic ellipsometry, x-ray diffraction, and transmission electron microscopy on blanket layers deposited on (100) Si, and electrical characterization on capacitors. It is found that DyScO{sub 3} and GdScO{sub 3} preserve their amorphous phases up to 1000 deg. C. Other encouraging properties for high k applications were demonstrated, including k-value {approx}22, almost no hysteresis or frequency dispersion in C-V curves, and leakage current reduction comparable to that of HfO{sub 2} of the same equivalent oxide thickness.

  7. Ternary rare-earth metal oxide high-k layers on silicon oxide

    NASA Astrophysics Data System (ADS)

    Zhao, C.; Witters, T.; Brijs, B.; Bender, H.; Richard, O.; Caymax, M.; Heeg, T.; Schubert, J.; Afanas'ev, V. V.; Stesmans, A.; Schlom, D. G.

    2005-03-01

    Ternary oxides, GdScO3, DyScO3, and LaScO3, deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied as alternative high-k gate dielectrics on (100) Si. Their physical characterization was done using Rutherford backscattering, spectroscopic ellipsometry, x-ray diffraction, and transmission electron microscopy on blanket layers deposited on (100) Si, and electrical characterization on capacitors. It is found that DyScO3 and GdScO3 preserve their amorphous phases up to 1000°C. Other encouraging properties for high k applications were demonstrated, including k-value ˜22, almost no hysteresis or frequency dispersion in C -V curves, and leakage current reduction comparable to that of HfO2 of the same equivalent oxide thickness.

  8. Driving force of oxygen-ion migration across high-k/SiO2 interface

    NASA Astrophysics Data System (ADS)

    Kunugi, Ryota; Nakagawa, Nobuhiro; Watanabe, Takanobu

    2017-03-01

    We clarified the mechanism of oxygen (O‑)-ion migration at a high-k/SiO2 interface, which is a possible origin of the flat-band voltage shift in metal/high-k gate stacks. The oxygen density difference accommodation model was reproduced by a molecular dynamics simulation of an Al2O3/SiO2 structure, in which O‑ ions migrate from the higher oxygen density side to the lower one. We determined that the driving force of the O‑-ion migration is the short-range repulsion between ionic cores. The repulsive force is greater in materials with a higher oxygen density, pushing O‑ ions to the lower oxygen density side.

  9. Hard magnetic property enhancement of Co{sub 7}Hf-based ribbons by boron doping

    SciTech Connect

    Chang, H. W.; Liao, M. C.; Shih, C. W.; Chang, W. C.; Yang, C. C.; Hsiao, C. H.; Ouyang, H.

    2014-11-10

    Hard magnetic property enhancement of melt spun Co{sub 88}Hf{sub 12} ribbons by boron doping is demonstrated. B-doping could not only remarkably enhance the magnetic properties from energy product ((BH){sub max}) of 2.6 MGOe and intrinsic coercivity ({sub i}H{sub c}) of 1.5 kOe for B-free Co{sub 88}Hf{sub 12} ribbons to (BH){sub max} = 7.7 MGOe and {sub i}H{sub c} = 3.1 kOe for Co{sub 85}Hf{sub 12}B{sub 3} ribbons but also improve the Curie temperature (T{sub C}) of 7:1 phase. The (BH){sub max} value achieved in Co{sub 85}Hf{sub 12}B{sub 3} ribbons is the highest in Co-Hf alloy ribbons ever reported, which is about 15% higher than that of Co{sub 11}Hf{sub 2}B ribbons spun at 16 m/s [M. A. McGuire, O. Rios, N. J. Ghimire, and M. Koehler, Appl. Phys. Lett. 101, 202401 (2012)]. The structural analysis confirms that B enters the orthorhombic Co{sub 7}Hf (7:1) crystal structure as interstitial atoms, forming Co{sub 7}HfB{sub x}, in the as-spun state. Yet B may diffuse out from the 7:1 phase after post-annealing, leading to the reduction of Curie temperature and the magnetic properties. The uniformly refined microstructure with B-doping results in high remanence (B{sub r}) and improves the squareness of demagnetization curve. The formation of interstitial-atom-modified Co{sub 7}HfB{sub x} phase and the microstructure refinement are the main reasons to give rise to the enhancement of hard magnetic properties in the B-containing Co{sub 7}Hf-based ribbons.

  10. High-k shallow traps observed by charge pumping with varying discharging times

    SciTech Connect

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  11. Ab-initio simulations on initial growth steps of high-K oxides on silicon

    NASA Astrophysics Data System (ADS)

    Bloechl, Peter E.

    2003-03-01

    One of the most acute challenges of semiconductor industry is the introduction of new so-called high-K gate oxides. Conventional SiO2 based gate oxides need to be replaced in order to avoid quantum mechanical leakage currents through ultrathin oxide layers. State of the art electronic structure calculations and ab-initio molecular dynamics simulations of the deposition of metals onto silicon and the formation of oxides have been performed. Atomic structure, chemical binding and electronic structure have been analyzed for a wide range of different adsorption structures of Zr, Hf, and Sr on silicon. Silicide formation and the step-wise formation of the oxides have been investigated. Particular emphasis will be given to the formation of the interface between SrTiO3 and silicon (001).

  12. Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

    NASA Astrophysics Data System (ADS)

    Veksler, D.; Nagaiah, P.; Chidambaram, T.; Cammarere, R.; Tokranov, V.; Yakimov, M.; Chen, Y.-T.; Huang, J.; Goel, N.; Oh, J.; Bersuker, G.; Hobbs, C.; Kirsch, P. D.; Oktyabrsky, S.

    2012-09-01

    In this work, we propose a method to quantify the density of interfacial states at the oxide/semiconductor interface using only Hall concentration and low frequency capacitance-voltage data. We discuss the advantages of the proposed method over commonly used admittance techniques in characterizing highly disordered interfaces between the high-k dielectric and high mobility substrates. This gated Hall method is employed to characterize high-k/IIIV interface quality in metal-oxide semiconductor high electron mobility transistor structures with high mobility InGaAs channels.

  13. Surface preparation for ALD of High-k dielectrics on indium gallium arsenide

    NASA Astrophysics Data System (ADS)

    Melitz, Wilhelm

    The key for a successful gate-first process is when subsequent processing steps cannot degrade the semiconductor, the dielectric, or the oxide-semiconductor interfaces. For silicon, the only commercial ALD high-k fabrication process, which avoids processing induced damage, is a replacement gate process (a type of gate-last process). While preparing silicon for gate-last processing is straightforward, the key to a gate-last process for III-V semiconductors is the order and cleanliness of the III-V channel prior to dielectric deposition. Aggressive oxide thickness reduction (equivalent oxide thickness, or EOT, scaling) is needed to fabricate small gate length devices with small subthreshold swings. Furthermore, aggressive EOT scaling requires a very high uniform ALD nucleation density, with no pinholes due to surface contaminants. The key barrier to solving a very practical problem is a surface chemistry challenge: develop a chemical process which removes nearly all air induced defects and contaminants and leaves the III-V surface flat and electrically active for high nucleation density ALD gate oxide deposition, which unpins the Fermi level. The following study uses scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to observe the removal of the oxide layer and restoration of the clean InGaAs surface reconstruction with atomic hydrogen cleaning, allowing for a gate-last or replacement-gate process. Along with surface cleaning STM and STS was used to characterize the initial passivation of InGaAs surfaces via ALD of trimethyl aluminum (TMA). The substrate temperature and initial surface reconstruction was critical to forming an unpinned passivation layer with a high nucleation density. A method was developed to use Kelvin probe force microscopy (KPFM) as a tool for insightful feedback on the electrostatics of scaled MOSFET devices. KPFM is a unique technique for providing two-dimensional potential profiles inside a working device. A

  14. 20. DETAIL VIEW OF SUBMERSIBLE GATE, SHOWING GATE ARMS, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    20. DETAIL VIEW OF SUBMERSIBLE GATE, SHOWING GATE ARMS, GATE PIERS, TRUNNION PIN AND GATE GAUGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  15. 21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ARM, TRUNNION PIN, PIER AND GATE GAUGE, LOOKING EAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  16. 17. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSE IN BACKGROUND, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  17. 17. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, GATE ARMS, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS, GATE CHAINS AND SWITCHES, AND BRIDGE GIRDERS, LOOKING SOUTHWEST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 5, Minneiska, Winona County, MN

  18. 18. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, GATE ARMS, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS, GATE CHAINS AND SWITCHES, AND BRIDGE GIRDERS, LOOKING NORTHWEST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 5, Minneiska, Winona County, MN

  19. Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides

    PubMed Central

    2011-01-01

    The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. PMID:21711749

  20. 16. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE, GATE ARM, TRUNNION PIN AND PIER, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  1. 18. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATES, GATE ARMS, PIERS AND DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  2. Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: a Raman study.

    PubMed

    Liyanage, Luckshitha Suriyasena; Cott, Daire J; Delabie, Annelies; Van Elshocht, Sven; Bao, Zhenan; Wong, H-S Philip

    2013-06-21

    Single-wall carbon nanotubes (SWCNTs) have great potential to become the channel material for future high-speed transistor technology. However, to realize a carbon nanotube field effect transistor (CNTFET) with excellent gate control, the high-k dielectrics between the CNT and the metal gate must have superb electrical properties and extremely high uniformity. Thus it is essential to understand the interactions between high-k materials and the SWCNTs to effectively control the transistor characteristics. In this study, we investigate the effects of atomic layer deposited (ALD) high-k dielectrics (Al2O3 and HfO2) on SWCNTs using Raman spectroscopy. We subjected the SWCNTs to various ALD cycles and studied the nucleation and growth of ALD dielectrics at defect sites using scanning electron microscopy and transmission electron microscopy images. We analyzed these samples using Raman spectroscopy and x-ray photoelectron spectroscopy. The Raman peak shifts of the G-peak and the 2D (G') peaks suggest doping and stress induced effects on the CNTs by the surrounding high-k oxide environment. Trends in the G-peak FWHM and G/D-peak ratios were identified and compared between Al2O3 and HfO2. We confirmed the ALD-deposited HfO2 is polycrystalline using x-ray diffraction and analyzed dielectric-CNT bonding states using XPS measurements. This study provides insights on the effects of ALD high-k materials on SWCNTs for future high-speed transistor applications.

  3. Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: a Raman study

    NASA Astrophysics Data System (ADS)

    Suriyasena Liyanage, Luckshitha; Cott, Daire J.; Delabie, Annelies; Van Elshocht, Sven; Bao, Zhenan; Wong, H.-S. Philip

    2013-06-01

    Single-wall carbon nanotubes (SWCNTs) have great potential to become the channel material for future high-speed transistor technology. However, to realize a carbon nanotube field effect transistor (CNTFET) with excellent gate control, the high-k dielectrics between the CNT and the metal gate must have superb electrical properties and extremely high uniformity. Thus it is essential to understand the interactions between high-k materials and the SWCNTs to effectively control the transistor characteristics. In this study, we investigate the effects of atomic layer deposited (ALD) high-k dielectrics (Al2O3 and HfO2) on SWCNTs using Raman spectroscopy. We subjected the SWCNTs to various ALD cycles and studied the nucleation and growth of ALD dielectrics at defect sites using scanning electron microscopy and transmission electron microscopy images. We analyzed these samples using Raman spectroscopy and x-ray photoelectron spectroscopy. The Raman peak shifts of the G-peak and the 2D (G‧) peaks suggest doping and stress induced effects on the CNTs by the surrounding high-k oxide environment. Trends in the G-peak FWHM and G/D-peak ratios were identified and compared between Al2O3 and HfO2. We confirmed the ALD-deposited HfO2 is polycrystalline using x-ray diffraction and analyzed dielectric-CNT bonding states using XPS measurements. This study provides insights on the effects of ALD high-k materials on SWCNTs for future high-speed transistor applications.

  4. Emerging Applications for High K Materials in VLSI Technology

    PubMed Central

    Clark, Robert D.

    2014-01-01

    The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing. PMID:28788599

  5. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  6. Thermally stable yttrium-scandium oxide high-k dielectrics deposited by a solution process

    NASA Astrophysics Data System (ADS)

    Hu, Wenbing; Frost, Bradley; Peterson, Rebecca L.

    2016-03-01

    We investigated the thermal stability of electrical properties in ternary alloy (Y x Sc1-x )2O3 high-k oxides as a function of yttrium fraction, x. The yttrium-scandium oxide dielectric films are deposited using a facile ink-based process. The oxides have a stoichiometry-dependent relative dielectric constant of 26.0 to 7.7 at 100 kHz, low leakage current density of 10-8 A·cm-2, high breakdown field of 4 MVṡcm-1, and interface trap density of 1012 cm-2·eV-1 with silicon. Compared with binary oxides, ternary alloys exhibit less frequency dispersion of the dielectric constant and a higher crystallization temperature. After crystallization is induced through a 900 °C anneal, ternary (Y0.6Sc0.4)2O3 films maintain their low leakage current and high breakdown field. In contrast, the electrical performance of the binary oxides significantly degrades following the same treatment. The solution-processed ternary oxide dielectrics demonstrated here may be used as high-k gate insulators in complementary metal-oxide semiconductor (CMOS) technologies, in novel electronic material systems and devices, and in printed, flexible thin film electronics, and as passivation layers for high power devices. These oxides may also be used as insulators in fabrication process flows that require a high thermal budget.

  7. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

    PubMed Central

    Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

    2011-01-01

    Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

  8. High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing.

    PubMed

    Reddy, Bobby; Dorvel, Brian R; Go, Jonghyun; Nair, Pradeep R; Elibol, Oguz H; Credo, Grace M; Daniels, Jonathan S; Chow, Edmond K C; Su, Xing; Varma, Madoo; Alam, Muhammad A; Bashir, Rashid

    2011-04-01

    Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al(2)O(3) gate dielectrics and we compare these devices with FETs with SiO(2) gate dielectrics. The use of a high-k dielectric such as Al(2)O(3) allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al(2)O(3) gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO(2) gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems.

  9. Oxygen vacancy defect engineering using atomic layer deposited HfAlO{sub x} in multi-layered gate stack

    SciTech Connect

    Bhuyian, M. N. Misra, D.; Sengupta, R.; Vurikiti, P.

    2016-05-02

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlO{sub x} with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V{sup +}/V{sup 2+}, are the primary source of defects in these dielectrics. When Al is added in HfO{sub 2}, the V{sup +} type defects with a defect activation energy of E{sub a} ∼ 0.2 eV modify to V{sup 2+} type to E{sub a} ∼ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V{sup +} type defects are generated and E{sub a} reverts back to ∼0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO{sub 2} contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  10. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

    PubMed Central

    Liu, Jiangwei; Liao, Meiyong; Imura, Masataka; Tanaka, Akihiro; Iwai, Hideo; Koide, Yasuo

    2014-01-01

    Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10−5 A·cm−2 for the gate voltage ranging from −4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices. PMID:25242175

  11. Alternative materials for next-generation transistors: High-k/germanium-based MOSFET

    NASA Astrophysics Data System (ADS)

    Hsueh, Chein-Lan

    Electronic devices that make up 99% of the computer processor and memory market are based on silicon (semiconductor) and silicon dioxide (insulator) technology. Unfortunately the key transistor gate stack structure within the "traditional" technology has reached an intrinsic physical scaling limit; the ultrathin gate oxide, already at 1nm thickness, cannot be made thinner without resulting in an intolerably high leakage current and reduced drive current. This limitation can be avoided by replacing the thin gate dielectric with a thicker film of an alternative material with a permittivity higher than that of SiO2, an accomplishing that has been realized in production just as this thesis goes to press. To further increase device performance, replacing the Si semiconductor with germanium as an alternative channel material is an attractive option for its high mobility and narrow band gap. However, the lack of a stable insulating oxide with high quality electrical properties prevents the fabrication of competitive Ge-based metal oxide semiconductor field effect transistors (MOSFETs). This dissertation reports the study of potential future-generation transistors with high-k dielectrics (HfO2 and Al2O3) on Ge substrates. A brief review of current research and development is first given followed by an introduction of the thin film characterization techniques used in this work. Various cleaning treatments as well as surface passivation methods using wet chemistry have been investigated on Ge substrates. Next, thin high-k dielectric films of HfO2 and Al2O3 have been deposited on Ge using atomic layer deposition (ALD). ALD permits films to be grown with monolayer control and excellent film conformality. Physical, chemical and electrical characterization has been performed on the multilayer film structures. Optimization of the film growth has been developed and we have demonstrated high quality with Au/HfO2/Ge nMOS devices. Capacitance-voltage electrical measurements show that

  12. Nonadditivity in moments ofinertia of high-K multiquasiparticle bands

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen-Hua; Wu, Xi; Lei, Yi-An; Zeng, Jin-Yan

    2008-09-01

    The experimental high-K 2- and 3-quasiparticle bands of well deformed rare-earth nuclei are analyzed. It is found that there exists significant nonadditivity in moments of inertia (MOIs) for these bands. The microscopic mechanism of the rotational bands is investigated by the particle number conserving (PNC) method in the frame of cranked shell model with pairing, in which the blocking effects are taken care of exactly. The experimental rotational frequency dependence of these bands is well reproduced in PNC calculations. The nonadditivity in MOIs originates from the destructive interference between Pauli blocking effects. Supported by National Natural Science Foundation of China (10675006, 10675007, 10435010)

  13. High-K multi-quasiparticle states in 254No

    NASA Astrophysics Data System (ADS)

    Clark, R. M.; Gregorich, K. E.; Berryman, J. S.; Ali, M. N.; Allmond, J. M.; Beausang, C. W.; Cromaz, M.; Deleplanque, M. A.; Dragojević, I.; Dvorak, J.; Ellison, P. A.; Fallon, P.; Garcia, M. A.; Gates, J. M.; Gros, S.; Jeppesen, H. B.; Kaji, D.; Lee, I. Y.; Macchiavelli, A. O.; Morimoto, K.; Nitsche, H.; Paschalis, S.; Petri, M.; Stavsetra, L.; Stephens, F. S.; Watanabe, H.; Wiedeking, M.

    2010-06-01

    We report results from an experiment on the decay of the high-K isomers in 254No. We have been able to establish the decay from the known high-lying four-quasiparticle isomer, which we assign as a K=16 state at an excitation energy of Ex=2.928(3) MeV. The decay of this state passes through a rotational band based on a previously unobserved state at Ex=2.012(2) MeV, which we suggest is based on a two-quasineutron configuration with K=10. This state in turn decays to a rotational band based on the known K=8 isomer, which we infer must also have a two quasineutron configuration. We are able to assign many new gamma-rays associated with the decay of the K=8 isomer, including the identification of a highly K-forbidden ΔK=8 E1 transition to the ground-state band. These results provide valuable new information on the orbitals close to the Fermi surface, pairing correlations, deformation and rotational response, and K-conservation in nuclei of the deformed trans-fermium region.

  14. Modelling and extraction procedure for gate insulator and fringing gate capacitance components of an MIS structure

    NASA Astrophysics Data System (ADS)

    Tinoco, J. C.; Martinez-Lopez, A. G.; Lezama, G.; Mendoza-Barrera, C.; Cerdeira, A.; Estrada, M.

    2016-07-01

    CMOS technology has been guided by the continuous reduction of MOS transistors used to fabricate integrated circuits. Additionally, the use of high-k dielectrics as well as a metal gate electrode have promoted the development of nanometric MOS transistors. Under this scenario, the proper modelling of the gate capacitance, with the aim of adequately evaluating the dielectric film thickness, becomes challenging for nanometric metal-insulator-semiconductor (MIS) structures due to the presence of extrinsic fringing capacitance components which affect the total gate capacitance. In this contribution, a complete intrinsic-extrinsic model for gate capacitance under accumulation of an MIS structure, together with an extraction procedure in order to independently determine the different capacitance components, is presented. ATLAS finite element simulation has been used to validate the proposed methodology.

  15. Identical high- K three-quasiparticle rotational bands

    NASA Astrophysics Data System (ADS)

    Kaur, Harjeet; Singh, Pardeep

    2016-12-01

    A comprehensive study of high- K three-quasiparticle rotational bands in odd- A nuclei indicates the similarity in γ -ray energies and dynamic moment of inertia Im^{(2)} . The extent of the identicality between the rotational bands is evaluated by using the energy factor method. For nuclei pairs exhibiting identical bands, the average relative change in the dynamic moment of inertia Im^{(2)} is also determined. The identical behaviour shown by these bands is attributed to the interplay of nuclear structure parameters: deformation and the pairing correlations. Also, experimental trend of the I(hbar) vs. hbar ω (MeV) plot for these nuclei pairs is shown to be in agreement with Tilted-Axis Cranking (TAC) model calculations.

  16. Mechanical Design of the NSTX High-k Scattering Diagnostic

    SciTech Connect

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H,; Smith, D. R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-09-26

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and {lambda}=1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis ({rho} {approx} .1) or near the edge ({rho} {approx} .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics.

  17. High-k Dielectric Nanosheets for Two-Dimensional material Electronics

    NASA Astrophysics Data System (ADS)

    Hao, Yufeng; Cui, Xu; Yin, Jun; Lee, Gwan-Hyoung; Arefe, Ghidewon; Osada, Minoru; Sasaki, Takayoshi; Hone, James

    2015-03-01

    Two-dimensional (2D) materials, such as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides, have shown great potential in nano-electronics because of their unique and superior physical properties. Among them, hBN has been known as an alternative dielectric that is atomically flat and free of trapped charges, which drastically enhance the mobility of graphene or MoS2. However, low dielectric constant (k ~ 3.5) of hBN limits its use in transistors as gate lengths are scaled down to tens of nanometers. Here we demonstrate high performance graphene and MoS2 field effect transistors by using ultrathin Ca2NaNb4O13 nanosheet as a dielectric and mechanically stacking 2D materials. We developed a facile transfer strategy to build 2D materials devices based on the Ca2NaNb4O13 nanosheets. We measured and found that the oxide nanosheet has high dielectric strength, along with high dielectric constant at thickness of a few tens of nanometer. Therefore, multiple-stacked heterostructure of 2D materials shows high mobility at small operating voltage. This study shows possibility of high-k dielectric nanosheets for 2D electronics.

  18. The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

    SciTech Connect

    Tao, Junguang; Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J.

    2014-06-09

    Energy-band alignments for molybdenum disulphide (MoS{sub 2}) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at monolayer MoS{sub 2}/Al{sub 2}O{sub 3} (ZrO{sub 2}) interface was measured to be 3.31 eV (2.76 eV), while the conduction-band offset (CBO) was 3.56 eV (1.22 eV). For bulk MoS{sub 2}/Al{sub 2}O{sub 3} interface, both VBO and CBO increase by ∼0.3 eV, due to the upwards shift of Mo 4d{sub z{sup 2}} band. The symmetric change of VBO and CBO implies Fermi level pinning by interfacial states. Our finding ensures the practical application of both p-type and n-type MoS{sub 2} based complementary metal-oxide semiconductor and other transistor devices using Al{sub 2}O{sub 3} and ZrO{sub 2} as gate materials.

  19. High-k Scattering and FIReTIP Diagnostic Upgrades for NSTX-U

    NASA Astrophysics Data System (ADS)

    Barchfeld, Robert; Scott, Evan; Domier, Calvin; Muscatello, Christopher; Riemenschneider, Paul; Sohrabi, Mohammad; Luhmann, Neville; Ren, Yang; Kaita, Robert

    2015-11-01

    A major upgrade to the High-k Scattering system is underway on NSTX-U, which is being transformed from a primarily toroidal detection geometry (for kr measurements) to a poloidal detection geometry (for kθ measurements) in which a probe beam is launched from Bay G and collected on Bay L. Combined with an increase in probing frequency to 693 GHz, the poloidal wavenumber sensitivity has been extended from kθ = 7 cm-1 up to 40 cm-1. The system will be installed and commissioned in 2016 with an initial 4-channel receiver, with plans to eventually upgrade to an 8x2 configuration, which can probe the plasma from the core out to the edge of the pedestal region. The Far Infrared Tangential Interferometer/Polarimeter (FIReTIP) system is being upgraded with field programmable gate array (FPGA) electronics to support real time feedback density control, and will be installed on Bay G this fall. Design and implementation details regarding both diagnostics will be presented. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

  20. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  1. Gate-all-around technology: Taking advantage of ballistic transport?

    NASA Astrophysics Data System (ADS)

    Huguenin, J. L.; Bidal, G.; Denorme, S.; Fleury, D.; Loubet, N.; Pouydebasque, A.; Perreau, P.; Leverd, F.; Barnola, S.; Beneyton, R.; Orlando, B.; Gouraud, P.; Salvetat, T.; Clement, L.; Monfray, S.; Ghibaudo, G.; Boeuf, F.; Skotnicki, T.

    2010-09-01

    This work presents an experimental study in order to evaluate the quality of transport in the most advanced state-of-the-art gate-all-around devices in term of performances. Experiments have been done on silicon channel devices with metal/high-k gate all-round stack at aggressive dimensions ( L × W × TSi = 25nm × 20 nm × 10nm). We deeply investigated the mobility and the limiting velocity in order to evaluate the possible occurrence of ballisticity. Interest of the gate-all-around in terms of effective current and parasitic capacitance has then been studied in the scope of elementary circuit perspectives.

  2. Status of the High-k Scattering System on NSTX

    NASA Astrophysics Data System (ADS)

    Smith, D. R.; Mazzucato, E.; Munsat, T.; Park, H.; Johnson, D.; Lin, L.; Domier, C. W.; Johnson, M.; Luhmann, J. R.

    2004-11-01

    A high-k scattering system is currently being installed on NSTX to directly observe density fluctuations on the scale of the electron gyro-radius as well as ion gyro-radius. A high power microwave source providing ˜200 mW at 280 GHz (λ=1.07 mm) is used as the probe beam source. The probe beam is launched in the ordinary mode at 5^rc to the midplane with the 5 cm beam waist positioned in the scattering region. A five-channel heterodyne receiver system detects scattered signals from fluctuations with radial wavenumbers |k_r|≈ 0-20 cm-1. The collection optics and detection system will be cross checked with a TPX acoustic cell which provides scattered signals with relatively calibrated fluctuation amplitudes at known wavenumbers. Diffraction, refraction, and polarization rotation effects of the probe and scattered beams as well as scattering volume constriction due to magnetic field shear and curvature are addressed. This work was supported by the U.S. Department of Energy under contract numbers DE-AC02-76CH03073, DE-FG03-95ER54295, and DE-FG03-99ER54531.

  3. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall...

  4. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  5. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  6. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall...

  7. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month....

  8. Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

    NASA Astrophysics Data System (ADS)

    Madan, Jaya; Gupta, R. S.; Chaujar, Rishu

    2015-09-01

    In this work, an analytical drain current model for gate dielectric engineered (hetero dielectric)-dual material gate-gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been developed. Parabolic approximation has been used to solve the two-dimensional (2D) Poisson equation with appropriate boundary conditions and continuity equations to evaluate analytical expressions for surface potential, electric field, tunneling barrier width and drain current. Further, the analog performance of the device is studied for three high-k dielectrics (Si3N4, HfO2, and ZrO2), and it has been investigated that the problem of lower ION, can be overcome by using the hetero-gate architecture. Moreover, the impact of scaling the gate oxide thickness and bias variations has also been studied. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10-4 A. The effectiveness of the proposed model is validated by comparing it with ATLAS device simulations.

  9. Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

    NASA Astrophysics Data System (ADS)

    Zhou, Shuang; Su, Yaorong; Xiao, Yubin; Zhao, Ni; Xu, Jianbin; Wong, Chingping

    2014-07-01

    In this study, a solution-processed bilayer high-k dielectric (Al2O y /TiO x , abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm2 V-1 s-1 and electron mobility of 3232 cm2 V-1 s-1 were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.

  10. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    NASA Astrophysics Data System (ADS)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  11. Solution-processed polymer-sorted semiconducting carbon nanotube network transistors with low-k /high-k bilayer polymer dielectrics

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hoon; Kim, Dong-Yu; Noh, Yong-Young

    2017-09-01

    Solution-processed semiconducting carbon nanotube transistors with a high mobility and an ON/OFF ratio are the most promising for use in flexible electronics. In this paper, we report low-k/high-k bilayer polymer dielectrics for solution-processed semiconducting single-walled carbon nanotube (s-SWNT) field-effect transistors (s-SWNT-FETs) with efficient charge transport and operation at low voltage. Thin low-k polystyrene (10 nm) is used for the first contact insulator with a channel in order to passivate the dipolar disorder induced by high-k insulators. The second gate insulator for low voltage operation is cyanoethyl pullulan (CEP), which is an environmentally friendly high-k insulator based on cellulose. Moreover, poly[(vinylidenefluoride-co-trifluoroethylene) is chosen as a single layer dielectric for comparison. A reasonably low operational voltage (<10 V) and high operational stability are achieved by the s-SWNT-FETs with polystyrene/CEP bilayer gate dielectrics. In addition, this indicates that the interface between the s-SWNTs and the low-k insulator is of critical importance for efficient charge transport.

  12. 21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, GATE PIER, TRUNNION PIN AND GATE GAUGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  13. 6. DETAIL VIEW OF ENTRANCE GATES, SHOWING IRON GATE, STONE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. DETAIL VIEW OF ENTRANCE GATES, SHOWING IRON GATE, STONE WORK, AND GATE STOP FROM SOUTHEAST OF NORTHWEST ELEMENTS. - William Enston Home, Entrance Gate, 900 King Street, Charleston, Charleston County, SC

  14. Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

    NASA Astrophysics Data System (ADS)

    Zhou, Jian-Ping; Chai, Chun-Lin; Yang, Shao-Yan; Liu, Zhi-Kai; Song, Shu-Lin; Li, Yan-Li; Chen, Nuo-Fu

    2004-09-01

    Gadolinium oxide thin films have been prepared on silicon (1 0 0) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation (4 bar 0 2) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (2 0 2), and finally, the cubic structure appeared at the substrate temperature of 700 °C, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented.

  15. Gaussian beam incident on the one-dimensional diffraction gratings with the high-K metal gate stack structures.

    PubMed

    Kuo, Hung-Fei; Frederick

    2014-04-01

    Optical scatterometry has attracted extensive interest in extracting the geometric shape information of nanolithography patterns because of the trend of shrinking device size and complicated stack structure. RCWA is the numerical algorithm implemented in the current scatterometry tool to calculate the diffraction efficiency. However, the known weakness for the RCWA method is the analysis of metallic gratings illuminated by the TM wave. This research applies the FDTD method using the Gaussian beam excitation source to analyze the diffraction efficiency of HKMG gratings for the use in the optical scatterometry and verifies the numerical diffraction efficiency discrepancy between the Gaussian beam and plane wave excitation methods. The numerical study is carried out with the line/space nanolithography patterns on the HKMG process stacks at 45 nm node technology. The nanolithography patterns are modeled as 1-D surface relief gratings. The 0th order diffraction efficiency is analyzed as a function of CDs, SWAs, incident angles and pitches of the gratings. The study presents the impact of the polarizations of the incident waves on the diffraction efficiency. In addition, this research investigates the phase of the 0th diffraction order as a function of the SWAs and illustrates the corresponding SWA parameter effect on the phase distribution. This research suggests the minimum beam radius to converge the numerical diffraction efficiency using Gaussian beam excitation to it using the plan wave.

  16. Parallelizable adiabatic gate teleportation

    NASA Astrophysics Data System (ADS)

    Nakago, Kosuke; Hajdušek, Michal; Nakayama, Shojun; Murao, Mio

    2015-12-01

    To investigate how a temporally ordered gate sequence can be parallelized in adiabatic implementations of quantum computation, we modify adiabatic gate teleportation, a model of quantum computation proposed by Bacon and Flammia [Phys. Rev. Lett. 103, 120504 (2009), 10.1103/PhysRevLett.103.120504], to a form deterministically simulating parallelized gate teleportation, which is achievable only by postselection. We introduce a twisted Heisenberg-type interaction Hamiltonian, a Heisenberg-type spin interaction where the coordinates of the second qubit are twisted according to a unitary gate. We develop parallelizable adiabatic gate teleportation (PAGT) where a sequence of unitary gates is performed in a single step of the adiabatic process. In PAGT, numeric calculations suggest the necessary time for the adiabatic evolution implementing a sequence of L unitary gates increases at most as O (L5) . However, we show that it has the interesting property that it can map the temporal order of gates to the spatial order of interactions specified by the final Hamiltonian. Using this property, we present a controlled-PAGT scheme to manipulate the order of gates by a control qubit. In the controlled-PAGT scheme, two differently ordered sequential unitary gates F G and G F are coherently performed depending on the state of a control qubit by simultaneously applying the twisted Heisenberg-type interaction Hamiltonians implementing unitary gates F and G . We investigate why the twisted Heisenberg-type interaction Hamiltonian allows PAGT. We show that the twisted Heisenberg-type interaction Hamiltonian has an ability to perform a transposed unitary gate by just modifying the space ordering of the final Hamiltonian implementing a unitary gate in adiabatic gate teleportation. The dynamics generated by the time-reversed Hamiltonian represented by the transposed unitary gate enables deterministic simulation of a postselected event of parallelized gate teleportation in adiabatic

  17. Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.

    2013-01-01

    This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (Ig)-gate voltage (Vg) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k ɛhigh-k = Q + Esio2ɛsio2.

  18. Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.

    2012-07-01

    This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k ɛhigh-k = Q + Esio2ɛsio2.

  19. Quantum gate decomposition algorithms.

    SciTech Connect

    Slepoy, Alexander

    2006-07-01

    Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

  20. Gated strip proportional detector

    DOEpatents

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  1. Gated strip proportional detector

    DOEpatents

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  2. Four-Quasiparticle High-K States in Neutron-Deficient Lead and Polonium Nuclei

    NASA Astrophysics Data System (ADS)

    Shi, Yue; Xu, Furong

    2012-06-01

    Configuration-constrained potential energy surface calculations have been performed to investigate four-quasiparticle high-K configurations in neutron-deficient lead and polonium isotopes. A good agreement between the calculations and the experimental data has been found for the excitation energy of the observed Kπ = 19- state in 188Pb. Several lowly excited high-K states are predicted, and the large oblate deformation and low energy indicate high-K isomerism in these nuclei.

  3. Hetero-gate-Dielectric Symmetric U-shaped gate tunnel FET

    NASA Astrophysics Data System (ADS)

    Tajally, Mohammad Bagher; Karami, Mohammad Azim

    2017-10-01

    Heterogeneous gate dielectric is used in a nanoscale symmetric U-shaped gate tunnel FET (SUTFET), which resulted in ION, IOFF, subthreshold swing (SS), and Iambipolar enhancement. ION of 1.5 × 10-5 A/μm, IOFF of 6 × 10-12 A/μm, average subthreshold swing of (SS) 19.83 mV/decade from 0 V < VGS < VThreshold, and Iambipolar of 5 × 10-9 A/μm are obtained by using high-k dielectric close to the source and low-k dielectric in the vicinity of drain. The gate dielectric engineering shows characteristic enhancement in compare to SUTFET with single gate dielectric material. The strong coupling between the gate and transistor channel near the source results in reduced potential barrier width in tunnel junction, which leads to higher ION and lower subthreshold swing. Moreover, the presence of low-k dielectric near the drain reduces ambipolar current by increasing potential barrier height. This improved SUTFET characteristics makes it suitable for the usage in digital circuits due to reduced ambipolar response.

  4. Range gated imaging experiments using gated intensifiers

    SciTech Connect

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  5. Tantalum oxide thin films for high-k dielectric applications: Crystallization, anisotropy and three dimensional imaging

    NASA Astrophysics Data System (ADS)

    Min, Kyunghoon

    2004-12-01

    High dielectric constant (high-k) materials have been drawing much attention for applications such as gate oxides for transistors and dynamic random access memory (DRAM) capacitors. Tantalum pentoxide (Ta2O5) is a possible replacement because of its relatively high dielectric constant and process compatibility. The microstructure of Ta2O5 thin films, deposited on Si substrates by atomic layer deposition, was investigated primarily using transmission electron microscopy (TEM). The kinetics of the crystallization and evolution of a complicated subgrain structure were studied by in-situ TEM heating experiments carried out at nominal temperatures of 790°C, 820°C and 850°C. It was found that the crystallization behavior could be modeled by a standard kinetic approach, using the Avrami equation, and differences from conventional bulk behavior are discussed. The growth and overall crystallization activation energies extracted from the in-situ TEM results were 4.2 eV and 6.3 eV, respectively. The tantalum oxide films used in this study were found to have two predominant crystallographic orientations. In order to evaluate the possible anisotropic properties of the two types of grains, micro-capacitors were fabricated on each type using a combination of a focused ion beam machine (FIB) and the TEM. Plan-view TEM samples were prepared to identify and locate grain orientations followed by electron beam assisted chemical vapor deposition of a Pt top electrode using the local deposition capability of the FIB. Electrical measurement of the micro-capacitors was carried out using a micromanipulator inside the FIB. The dielectric properties of the two types of grains were directly compared from the measurements. A further application of FIB combined with TEM allows novel specimen preparation for electron tomography. Accordingly, we can address the three dimensional imaging of Ta2O5 thin films deposited on hemi-spherical grain silicon (HSG) structures. The post-shaped sample

  6. Optical Logic Gates

    NASA Technical Reports Server (NTRS)

    Du Fresne, E. R.; Dowler, W. L.

    1985-01-01

    Logic gates for light signals constructed from combinations of prisms, polarizing plates, and quarterwave plates. Optical logic gate performs elementary logic operation on light signals received along two optical fibers. Whether gate performs OR function or exclusive-OR function depends on orientation of analyzer. Nonbinary truth tables also obtained by rotating polarizer or analyzer to other positions or inserting other quarter-wave plates.

  7. Configurations and decay hindrances of high-K states in 180Hf

    NASA Astrophysics Data System (ADS)

    Tandel, S. K.; Chowdhury, P.; Kondev, F. G.; Janssens, R. V. F.; Khoo, T. L.; Carpenter, M. P.; Lauritsen, T.; Lister, C. J.; Seweryniak, D.; Zhu, S.; Deacon, A.; Freeman, S. J.; Hammond, N. J.; Jones, G. D.; Moore, E. F.; Smith, J. F.

    2016-12-01

    Multi-quasiparticle high-K states, several of which are isomeric, were observed in 180Hf with the Gammasphere array. Lifetimes in the ns-μ s range were determined using centroid-shift and decay measurements within a μ s coincidence time window. The configurations of high-K states involve two and four quasiparticles, with states up to Kπ=(18-) established. High-K excitations are found to be progressively more favored with increasing excitation energy. The K quantum number is quite robust up to the highest spins observed, as evidenced by the large values of the reduced hindrance for isomeric decays. Rotational bands built on three high-K states are identified, and the measured branching ratios in these sequences enable the assignment of underlying configurations. Multi-quasiparticle calculations using the Lipkin-Nogami approach for pairing, with blocking included, reproduce the observed high-K energies quite well.

  8. 15. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATES AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATES AND GATE ARMS, PIERS AND DAM BRIDGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  9. 4. DETAIL VIEW OF TAINTER GATE PIER AND TAINTER GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. DETAIL VIEW OF TAINTER GATE PIER AND TAINTER GATE NO. 7 AND NON-SUBMERSIBLE TAINTER GATES, LOOKING WEST (UPSTREAM) - Upper Mississippi River 9-Foot Channel Project, Lock & Dam 26R, Alton, Madison County, IL

  10. 19. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    19. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING GATE ARM, PIER, TRUNNION PIN AND GATE GAUGE, LOOKING NORTH - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  11. 20. DETAIL VIEW OF TAINTER GATE, SHOWING GATE ARMS, PIERS, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    20. DETAIL VIEW OF TAINTER GATE, SHOWING GATE ARMS, PIERS, TRUNNION PINS, AND GATE GAUGE, LOOKING SOUTHWEST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 5, Minneiska, Winona County, MN

  12. 16. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, PIERS, BRIDGE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. DETAIL VIEW OF TAINTER GATE, SHOWING GATES, PIERS, BRIDGE GIRDERS AND ROLLER GATE BULKHEADS STORED ON PIER ABUTMENTS, LOOKING WEST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 5, Minneiska, Winona County, MN

  13. 12. DETAIL VIEW OF ROLLER GATE, SHOWING GATE FLANGE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. DETAIL VIEW OF ROLLER GATE, SHOWING GATE FLANGE AND TUBE, ROLLER TRACK, CHAIN AND GATE HEATER, LOOKING EAST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 5, Minneiska, Winona County, MN

  14. 10. DETAIL VIEW OF ROLLER GATE, SHOWING GATE FLANGE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. DETAIL VIEW OF ROLLER GATE, SHOWING GATE FLANGE AND TUBE, ROLLER TRACK AND GATE HEATER, LOOKING SOUTHWEST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  15. Sliding-gate valve

    DOEpatents

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  16. Adiabatically implementing quantum gates

    SciTech Connect

    Sun, Jie; Lu, Songfeng Liu, Fang

    2014-06-14

    We show that, through the approach of quantum adiabatic evolution, all of the usual quantum gates can be implemented efficiently, yielding running time of order O(1). This may be considered as a useful alternative to the standard quantum computing approach, which involves quantum gates transforming quantum states during the computing process.

  17. CCD gate definition process

    NASA Astrophysics Data System (ADS)

    Bluzer

    1986-02-01

    The present invention utilizes a double masking step in a CCD gate definition process to eliminate the re-entrant oxide by using a thin film layer other than photoresist to define the polysilicon gates used by defining the thin film layer with a double masking process before any of the polysilicon gate layer is etched. It is one object of the present invention, therefore, to provide an improved process for CCD gate definition. It is another object of the invention to provide an improved CCD gate definition process wherein a profiled oxide layer is produced over a polysilicon layer without re-entrant oxide regions. It is another object of the invention to provide an improved CCD gate definition process wherein a thin film layer is utilized to define the polysilicon gate layers. It is another object of the invention to provide an improved CCD gate definition process wherein the thin film layer is defined by a double masking process before any polysilicon layer is etched.

  18. Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

    NASA Astrophysics Data System (ADS)

    Xie, Qi; Deng, Shaoren; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Jiang, Yu-Long; Deduytsche, Davy; Detavernier, Christophe

    2012-07-01

    Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (offering a mobility gain of approximately ×2 for electrons and ×4 for holes when compared to conventional Si channels). However, many issues still need to be addressed before Ge can be implemented in high-performance field-effect-transistor (FET) devices. One of the key issues is to provide a high-quality interfacial layer, which does not lead to substantial drive current degradation in both low equivalent oxide thickness and short channel regime. In recent years, a wide range of materials and processes have been investigated to obtain proper interfacial properties, including different methods for Ge surface passivation, various high-k dielectrics and metal gate materials and deposition methods, and different post-deposition annealing treatments. It is observed that each process step can significantly affect the overall metal-oxide-semiconductor (MOS)-FET device performance. In this review, we describe and compare combinations of the most commonly used Ge surface passivation methods (e.g. epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics. In particular, plasma-based processes for surface passivation in combination with plasma-enhanced atomic layer deposition for high-k depositions are shown to result in high-quality MOS structures. To further improve properties, the gate stack can be annealed after deposition. The effects of annealing temperature and ambient on the electrical properties of the MOS structure are also discussed.

  19. Optical NAND gate

    DOEpatents

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  20. Configurations and decay hindrances of high- K states in Hf180

    DOE PAGES

    Tandel, S. K.; Chowdhury, P.; Kondev, F. G.; ...

    2016-12-02

    Multi-quasiparticle high-K states, several of which are isomeric, were observed in Hf-180 with the Gammasphere array. We determined the lifetimes in the ns-μs range using centroid-shift and decay measurements within a mu s coincidence time window. The configurations of high-K states involve two and four quasiparticles, with states up to Kπ = (18-) established. High-K excitations are found to be progressively more favored with increasing excitation energy. The K quantum number is quite robust up to the highest spins observed, as evidenced by the large values of the reduced hindrance for isomeric decays. Furthermore, rotational bands built on three high-Kmore » states are identified, and the measured branching ratios in these sequences enable the assignment of underlying configurations. Multi-quasiparticle calculations using the Lipkin-Nogami approach for pairing, with blocking included, reproduce the observed high-K energies quite well.« less

  1. Detection of high k turbulence using two dimensional phase contrast imaging on LHD

    SciTech Connect

    Michael, C. A.; Tanaka, K.; Akiyama, T.; Kawahata, K.; Vyacheslavov, L. N.; Sanin, A.; Kharchev, N. K.; Okajima, S.

    2008-10-15

    High k turbulence, up to 30 cm{sup -1}, can be measured using the two dimensional CO2 laser phase contrast imaging system on LHD. Recent hardware improvements and experimental results are presented. Precise control over the lens positions in the detection system is necessary because of the short depth of focus for high k modes. Remote controllable motors to move optical elements were installed, which, combined with measurements of the response to ultrasound injection, allowed experimental verification and shot-to-shot adjustment of the object plane. Strong high k signals are observed within the first 100-200 ms after the initial electron cyclotron heating (ECH) breakdown, in agreement with gyrotron scattering. During later times in the discharge, the entire k spectrum shifts to lower values (although the total amplitude does not change significantly), and the weaker high k signals are obscured by leakage of low k components at low frequency, and detector noise, at high frequency.

  2. Observation of Work Functions, Metallicity, Band Bending, Interfacial Dipoles by EUPS for Characterizing High-k/Metal Interfaces

    SciTech Connect

    Tomie, Toshihisa; Ishitsuka, Tomoaki; Ootsuka, Teruhisa; Ota, Hiroyuki

    2011-11-10

    EUPS (EUV excited photoelectron spectroscopy) is a novel photoelectron spectroscopy technique, in which a sample is excited with 4.86 nm (255 eV), 3-ns pulse EUV light emitted from a laser-produced plasma and the resulting electron spectrum is analyzed with a time-of-flight (TOF) analyzer. EUPS gives information of the topmost atoms because the escape depth of photo-electrons excited by 4.86 nm light is only 0.5 nm. EUPS can evaluate band-bending because the peak density of the excitation light on the sample is extremely high, so that bent electronic bands in semiconductors can be flattened. Secondary electron spectra, from which the vacuum level of the material surface can be determined, are obtained very quickly owing to the use of a TOF analyzer, The metal gate related issues are one of the most challenging topics facing CMOS technology. This paper demonstrates EUPS as a powerful method for characterizing high-k/metal interfaces by showing data from direct observations of interfacial dipoles.

  3. Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer

    NASA Astrophysics Data System (ADS)

    Mroczyński, R.; Wachnicki, Ł.; Gierałtowska, S.

    2016-12-01

    In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≍ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≍ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

  4. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    SciTech Connect

    Liu, Ao; Liu, Guoxia E-mail: fukaishan@yahoo.com; Zhu, Huihui; Shan, Fukai E-mail: fukaishan@yahoo.com; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo

    2016-06-06

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiO{sub x}) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiO{sub x} TFTs, together with the characteristics of NiO{sub x} thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric, the electrical performance of NiO{sub x} TFT was improved significantly compared with those based on SiO{sub 2} dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm{sup 2}/V s, which is mainly beneficial from the high areal capacitance of the Al{sub 2}O{sub 3} dielectric and high-quality NiO{sub x}/Al{sub 2}O{sub 3} interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  5. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    NASA Astrophysics Data System (ADS)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  6. 18. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATE AND GATE ARMS, GATE PIER AND DAM BRIDGE, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  7. 17. DETAIL VIEW OF NONSUBMERSIBLE TAINTER GATE, SHOWING GATE AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF NON-SUBMERSIBLE TAINTER GATE, SHOWING GATE AND GATE ARM, GATE PIER AND DAM BRIDGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  8. Optical NOR gate

    DOEpatents

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  9. Optical XOR gate

    SciTech Connect

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  10. Contactless analysis of electric dipoles at high-k/SiO{sub 2} interfaces by surface-charge-switched electron spectroscopy

    SciTech Connect

    Toyoda, S.; Fukuda, K.; Morita, M.; Nakata, A.; Uchimoto, Y.; Itoh, E.; Sugaya, H.; Matsubara, E.

    2016-05-23

    The continuous development of silicon devices has been supported by fundamental understanding of the two interfaces that predict the device properties: high-dielectric oxide (high-k)/SiO{sub 2} and SiO{sub 2}/Si. In the absence of metal electrode fabrication, it is challenging to use spectroscopic approaches to deduce the electric dipoles in these interfaces for the prediction of electrical characteristics such as the leakage current and threshold voltage. Here, we propose a method to analyze the permanent dipole at the high-k/SiO{sub 2} interface by surface-charge-switched electron spectroscopy (SuCSES). An electron flood gun was used to switch the electrical polarity at the insulating surface to extract the interface-dipole contribution from the macroscopic dielectric polarization in the high-k/SiO{sub 2}/Si stack structure. TaO{sub 3}{sup −} nanosheet (TaNS) crystallites, which are a family of high-k tantalate materials deposited on the SiO{sub 2}/Si substrates, were annealed to prepare a nanoscale model interface. The properties of this interface were examined as a function of annealing temperature across the crystalline-to-amorphous transition. Macroscopic dielectric polarization of the TaNS/SiO{sub 2}/Si gate stack was found to exhibit a gradual decay that depended upon the quantum tunneling processes of induced carriers at the SiO{sub 2}/Si interface. Additionally, the dipole at the high-k/thin-SiO{sub 2} interface abruptly changed by ∼0.4 eV before and after annealing at 400 °C, which may be the result of a decrease in conduction-band offsets at the high-k/Si interface. Thus, SuCSES can aid in determining the inherent valence-band offsets in dielectric interfaces by using X-ray photoelectron spectroscopy with high accuracy and precision. Furthermore, SuCSES can determine whether dielectric polarization, including the interfacial dipole, affects the experimental value of the band offsets.

  11. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  12. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  13. The human respiratory gate

    NASA Technical Reports Server (NTRS)

    Eckberg, Dwain L.

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

  14. Advanced insulated gate bipolar transistor gate drive

    DOEpatents

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  15. CFTR Gating I

    PubMed Central

    Bompadre, Silvia G.; Ai, Tomohiko; Cho, Jeong Han; Wang, Xiaohui; Sohma, Yoshiro; Li, Min; Hwang, Tzyh-Chang

    2005-01-01

    The CFTR chloride channel is activated by phosphorylation of serine residues in the regulatory (R) domain and then gated by ATP binding and hydrolysis at the nucleotide binding domains (NBDs). Studies of the ATP-dependent gating process in excised inside-out patches are very often hampered by channel rundown partly caused by membrane-associated phosphatases. Since the severed ΔR-CFTR, whose R domain is completely removed, can bypass the phosphorylation-dependent regulation, this mutant channel might be a useful tool to explore the gating mechanisms of CFTR. To this end, we investigated the regulation and gating of the ΔR-CFTR expressed in Chinese hamster ovary cells. In the cell-attached mode, basal ΔR-CFTR currents were always obtained in the absence of cAMP agonists. Application of cAMP agonists or PMA, a PKC activator, failed to affect the activity, indicating that the activity of ΔR-CFTR channels is indeed phosphorylation independent. Consistent with this conclusion, in excised inside-out patches, application of the catalytic subunit of PKA did not affect ATP-induced currents. Similarities of ATP-dependent gating between wild type and ΔR-CFTR make this phosphorylation-independent mutant a useful system to explore more extensively the gating mechanisms of CFTR. Using the ΔR-CFTR construct, we studied the inhibitory effect of ADP on CFTR gating. The Ki for ADP increases as the [ATP] is increased, suggesting a competitive mechanism of inhibition. Single channel kinetic analysis reveals a new closed state in the presence of ADP, consistent with a kinetic mechanism by which ADP binds at the same site as ATP for channel opening. Moreover, we found that the open time of the channel is shortened by as much as 54% in the presence of ADP. This unexpected result suggests another ADP binding site that modulates channel closing. PMID:15767295

  16. Searching for high-K isomers in the proton-rich A ˜ 80 mass region

    NASA Astrophysics Data System (ADS)

    Bai, Zhi-Jun; Jiao, Chang-Feng; Gao, Yuan; Xu, Fu-Rong

    2016-09-01

    Configuration-constrained potential-energy-surface calculations have been performed to investigate the K isomerism in the proton-rich A ˜ 80 mass region. An abundance of high-K states are predicted. These high-K states arise from two and four-quasi-particle excitations, with Kπ = 8+ and Kπ = 16+, respectively. Their excitation energies are comparatively low, making them good candidates for long-lived isomers. Since most nuclei under study are prolate spheroids in their ground states, the oblate shapes of the predicted high-K states may indicate a combination of K isomerism and shape isomerism. Supported by National Key Basic Research Program of China (2013CB834402) and National Natural Science Foundation of China (11235001, 11320101004 and 11575007)

  17. Synchronous pulsing plasma utilization in dummy poly gate removal process

    NASA Astrophysics Data System (ADS)

    Huang, Ruixuan; Meng, Xiao-Ying; Han, Qiu-Hua; Zhang, Hai-Yang

    2015-03-01

    When CMOS technology reaches 28/20nm node and beyond, several new schemes are implemented such as High K metal gate (HKMG) which can enhance the device performance and has better control of device current leakage. Dummy poly gate removal (DPGR) process is introduced for HKMG, and works as a key process to control the work function of metal gate and threshold voltage (Vt) shift. In dry etch technology, conventional continuous wave (CW) plasma process has been widely used, however, it may not be capable for some challenging process in 28nm node and beyond. In DPGR process for HKMG scheme, CW scheme may result in plasma damage of gate oxide/capping layer for its inherent high electron temperature (Te) and ion energy while synchronous pulsing scheme is capable to simultaneously pulse both source and bias power, which could achieve lower Te, independent control of ion and radical flux, well control the loading of polymer deposition on dense/ isolate features. It's the first attempt to utilize synchronous pulsing plasma in DPGR process. Experiment results indicate that synchronous pulsing could provide less silicon recess under thin gate oxide which is induced by the plasma oxidation. Furthermore, the loading of HK capping layer loss between long channel and short channel can be well controlled which plays a key role on transistor performance, such as leakage and threshold voltage shift. Additionally, it has been found that synchronous pulsing could distinctly improve ILD loss when compared with CW, which is helpful to broaden the whole process window.

  18. Hetero-epitaxial growth of the cubic single crystalline HfO 2 film as high k materials by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Zhang, Xinqiang; Tu, Hailing; Wang, Xiaona; Xiong, Yuhua; Yang, Mengmeng; Wang, Lei; Du, Jun

    2010-10-01

    We report a hetero-epitaxial growth of cubic single crystalline HfO 2 film on Si substrates as high k materials by pulse laser ablation (PLA) at 820 °C. To eliminate the interfacial defects, the HfO 2 film has then been annealed at 900 °C for 5 min in N 2. Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO 2 film on Si substrates corresponding to (∥( and [∥[. An interface layer has been revealed by high-resolution transmission electron microscope (HRTEM). Through capacitance-voltage ( C- V) and current-voltage ( I- V), it has been obtained that the leakage current of the HfO 2 gate insulator with dielectric constant of 26 is 5×10 -6 A/cm 2 at -1 V.

  19. A nanomechanical Fredkin gate.

    PubMed

    Wenzler, Josef-Stefan; Dunn, Tyler; Toffoli, Tommaso; Mohanty, Pritiraj

    2014-01-08

    Irreversible logic operations inevitably discard information, setting fundamental limitations on the flexibility and the efficiency of modern computation. To circumvent the limit imposed by the von Neumann-Landauer (VNL) principle, an important objective is the development of reversible logic gates, as proposed by Fredkin, Toffoli, Wilczek, Feynman, and others. Here, we present a novel nanomechanical logic architecture for implementing a Fredkin gate, a universal logic gate from which any reversible computation can be built. In addition to verifying the truth table, we demonstrate operation of the device as an AND, OR, NOT, and FANOUT gate. Excluding losses due to resonator dissipation and transduction, which will require significant improvement in order to minimize the overall energy cost, our device requires an energy of order 10(4) kT per logic operation, similar in magnitude to state-of-the-art transistor-based technologies. Ultimately, reversible nanomechanical logic gates could play a crucial role in developing highly efficient reversible computers, with implications for efficient error correction and quantum computing.

  20. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Gu, J. J.; Wu, Y. Q.; Ye, P. D.

    2011-03-01

    Recently, encouraging progress has been made on surface-channel inversion-mode In-rich InGaAs NMOSFETs with superior drive current, high transconductance and minuscule gate leakage, using atomic layer deposited (ALD) high-k dielectrics. Although gate-last process is favorable for high-k/III-V integration, high-speed logic devices require a self-aligned gate-first process for reducing the parasitic resistance and overlap capacitance. On the other hand, a gate-first process usually requires higher thermal budget and may degrade the III-V device performance. In this paper, we systematically investigate the thermal budget of gate-last and gate-first process for deep-submicron InGaAs MOSFETs. We conclude that the thermal instability of (NH4)2S as the pretreatment before ALD gate dielectric formation leads to the potential failure of enhancement-mode operation and deteriorates interface quality in the gate-first process. We thus report on the detailed study of scaling metrics of deep-submicron self-aligned InGaAs MOSFET without sulfur passivation, featuring optimized threshold voltage and negligible off-state degradation.

  1. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  2. 2. CANNON GATES. DETAIL OF NORTHWEST GATE STONE WALL TO ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. CANNON GATES. DETAIL OF NORTHWEST GATE STONE WALL TO LEFT IS A REMNANT OF THE ORIGINAL FACILITY BOUNDARY FENCE. IT IS CONSTRUCTED IN BLUE PUDDING STONE. - Picatinny Arsenal, State Route 15 near I-80, Dover, Morris County, NJ

  3. 7. DETAIL VIEW OF DAM, SHOWING ROLLER GATES, GATE PIERS, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. DETAIL VIEW OF DAM, SHOWING ROLLER GATES, GATE PIERS, HEADHOUSES AND DAM BRIDGE, LOOKING NORTHWEST, UPSTREAM - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 9, Lynxville, Crawford County, WI

  4. Amplifying genetic logic gates.

    PubMed

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  5. Cardiac gated ventilation

    SciTech Connect

    Hanson, C.W. III; Hoffman, E.A.

    1995-12-31

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

  6. Silicon nanowires with high-k hafnium oxide dielectrics for sensitive detection of small nucleic acid oligomers.

    PubMed

    Dorvel, Brian R; Reddy, Bobby; Go, Jonghyun; Duarte Guevara, Carlos; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-07-24

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO(2)), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFETs has been small oligonucleotides, more specifically, microRNA (miRNA). MicroRNAs are small RNA oligonucleotides which bind to mRNAs, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO(2) dielectric-based silicon nanowires for biosensing applications. Here we demonstrate sensing of single-stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100 fM detection levels of the miR-10b DNA analogue, with a theoretical limit of detection of 1 fM. Moreover, the noncomplementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform.

  7. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers

    PubMed Central

    Dorvel, Brian R.; Reddy, Bobby; Go, Jonghyun; Guevara, Carlos Duarte; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-01-01

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in Point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFET’s has been small oligonucleotides, more specifically microRNA (miRNA). MicroRNA’s are small RNA oligonucleotides which bind to messenger RNA’s, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO2 dielectric based silicon nanowires for biosensing applications. Here we demonstrate sensing of single stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100fM detection levels of miR-10b DNA analogue, with a theoretical limit of detection of 1fM. Moreover, the non-complementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform. PMID:22695179

  8. Adiabatically tapered hyperbolic metamaterials for dispersion control of high-k waves.

    PubMed

    West, Paul R; Kinsey, Nathaniel; Ferrera, Marcello; Kildishev, Alexander V; Shalaev, Vladimir M; Boltasseva, Alexandra

    2015-01-14

    Hyperbolic metamaterials (HMMs) have shown great promise in the optical and quantum communities due to their extremely large, broadband photonic density of states. This feature is a direct consequence of supporting photonic modes with unbounded k-vectors. While these materials support such high-k waves, they are intrinsically confined inside the HMM and cannot propagate into the far-field, rendering them impractical for many applications. Here, we demonstrate how the magnitude of k-vectors can be engineered as the propagating radiation passes through media of differing dispersion relations (including type II HMMs and dielectrics) in the in-plane direction. The total outcoupling efficiency of waves in the in-plane direction is shown to be on average 2 orders of magnitude better than standard out-of-plane outcoupling methods. In addition, the outcoupling can be further enhanced using a proposed tapered HMM waveguide that is fabricated using a shadowed glancing angle deposition technique; thereby proving the feasibility of the proposed device. Applications for this technique include converting high-k waves to low-k waves that can be out-coupled into free-space and creating extremely high-k waves that are quickly quenched. Most importantly, this method of in-plane outcoupling acts as a bridge through which waves can cross between the regimes of low-k waves in classical dielectric materials and the high-k waves in HMMs with strongly reduced reflective losses.

  9. Adiabatic gate teleportation.

    PubMed

    Bacon, Dave; Flammia, Steven T

    2009-09-18

    The difficulty in producing precisely timed and controlled quantum gates is a significant source of error in many physical implementations of quantum computers. Here we introduce a simple universal primitive, adiabatic gate teleportation, which is robust to timing errors and many control errors and maintains a constant energy gap throughout the computation above a degenerate ground state space. This construction allows for geometric robustness based upon the control of two independent qubit interactions. Further, our piecewise adiabatic evolution easily relates to the quantum circuit model, enabling the use of standard methods from fault-tolerance theory for establishing thresholds.

  10. Outlet side of gate, showing the Radial Gate, hoist mechanism ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Outlet side of gate, showing the Radial Gate, hoist mechanism and concrete walkway across the canal. The concrete baffle separating the afterbay and the cipoletti weir is in the foreground - Wellton-Mohawk Irrigation System, Radial Gate Check with Drop, Wellton Canal 9.9, West of Avenue 34 East & north of County Ninth Street, Wellton, Yuma County, AZ

  11. Exterior, looking northwest towards Main Gate, Gate House on left, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Exterior, looking northwest towards Main Gate, Gate House on left, Technical Equipment Building (Building 5760) in background to right - Beale Air Force Base, Perimeter Acquisition Vehicle Entry Phased-Array Warning System, Gate House, End of Spencer Paul Road, north of Warren Shingle Road (14th Street), Marysville, Yuba County, CA

  12. Exterior, looking southeast from within compound towards Main Gate, Gate ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Exterior, looking southeast from within compound towards Main Gate, Gate House center left - Beale Air Force Base, Perimeter Acquisition Vehicle Entry Phased-Array Warning System, Gate House, End of Spencer Paul Road, north of Warren Shingle Road (14th Street), Marysville, Yuba County, CA

  13. Hydraulic Tomography: Continuity and Discontinuity of High-K and Low-K Zones.

    PubMed

    Hochstetler, David L; Barrash, Warren; Leven, Carsten; Cardiff, Michael; Chidichimo, Francesco; Kitanidis, Peter K

    2016-03-01

    Hydraulic tomography is an emerging field and modeling method that provides a continuous hydraulic conductivity (K) distribution for an investigated region. Characterization approaches that rely on interpolation between one-dimensional (1D) profiles have limited ability to accurately identify high-K channels, juxtapositions of lenses with high K contrast, and breaches in layers or channels between such profiles. However, locating these features is especially important for groundwater flow and transport modeling, and for design and operation of in situ remediation in complex hydrogeologic environments. We use transient hydraulic tomography to estimate 3D K in a volume of 15-m diameter by 20-m saturated thickness in a highly heterogeneous unconfined alluvial (clay to sand-and-gravel) aquifer with a K range of approximately seven orders of magnitude at an active industrial site in Assemini, Sardinia, Italy. A modified Levenberg-Marquardt algorithm was used for geostatistical inversion to deal with the nonlinear nature of the highly heterogeneous system. The imaging results are validated with pumping tests not used in the tomographic inversion. These tests were conducted from three of five clusters of continuous multichannel tubing (CMTs) installed for observation in the tomographic testing. Locations of high-K continuity and discontinuity, juxtaposition of very high-K and very low-K lenses, and low-K "plugs" are evident in regions of the investigated volume where they likely would not have been identified with interpolation from 1D profiles at the positions of the pumping well and five CMT clusters. Quality assessment methods identified a suspect high-K feature between the tested volume and a lateral boundary of the model.

  14. Modulation of NCC activity by low and high K(+) intake: insights into the signaling pathways involved.

    PubMed

    Castañeda-Bueno, María; Cervantes-Perez, Luz Graciela; Rojas-Vega, Lorena; Arroyo-Garza, Isidora; Vázquez, Norma; Moreno, Erika; Gamba, Gerardo

    2014-06-15

    Modulation of Na(+)-Cl(-) cotransporter (NCC) activity is essential to adjust K(+) excretion in the face of changes in dietary K(+) intake. We used previously characterized genetic mouse models to assess the role of Ste20-related proline-alanine-rich kinase (SPAK) and with-no-lysine kinase (WNK)4 in the modulation of NCC by K(+) diets. SPAK knockin and WNK4 knockout mice were placed on normal-, low-, or high-K(+)-citrate diets for 4 days. The low-K(+) diet decreased and high-K(+) diet increased plasma aldosterone levels, but both diets were associated with increased phosphorylation of NCC (phospho-NCC, Thr(44)/Thr(48)/Thr(53)) and phosphorylation of SPAK/oxidative stress responsive kinase 1 (phospho-SPAK/OSR1, Ser(383)/Ser(325)). The effect of the low-K(+) diet on SPAK phosphorylation persisted in WNK4 knockout and SPAK knockin mice, whereas the effects of ANG II on NCC and SPAK were lost in both mouse colonies. This suggests that for NCC activation by ANG II, integrity of the WNK4/SPAK pathway is required, whereas for the low-K(+) diet, SPAK phosphorylation occurred despite the absence of WNK4, suggesting the involvement of another WNK (WNK1 or WNK3). Additionally, because NCC activation also occurred in SPAK knockin mice, it is possible that loss of SPAK was compensated by OSR1. The positive effect of the high-K(+) diet was observed when the accompanying anion was citrate, whereas the high-KCl diet reduced NCC phosphorylation. However, the effect of the high-K(+)-citrate diet was aldosterone dependent, and neither metabolic alkalosis induced by bicarbonate, nor citrate administration in the absence of K(+) increased NCC phosphorylation, suggesting that it was not due to citrate-induced metabolic alkalosis. Thus, the accompanying anion might modulate the NCC response to the high-K(+) diet. Copyright © 2014 the American Physiological Society.

  15. Modulation of NCC activity by low and high K+ intake: insights into the signaling pathways involved

    PubMed Central

    Castañeda-Bueno, María; Cervantes-Perez, Luz Graciela; Rojas-Vega, Lorena; Arroyo-Garza, Isidora; Vázquez, Norma; Moreno, Erika

    2014-01-01

    Modulation of Na+-Cl− cotransporter (NCC) activity is essential to adjust K+ excretion in the face of changes in dietary K+ intake. We used previously characterized genetic mouse models to assess the role of Ste20-related proline-alanine-rich kinase (SPAK) and with-no-lysine kinase (WNK)4 in the modulation of NCC by K+ diets. SPAK knockin and WNK4 knockout mice were placed on normal-, low-, or high-K+-citrate diets for 4 days. The low-K+ diet decreased and high-K+ diet increased plasma aldosterone levels, but both diets were associated with increased phosphorylation of NCC (phospho-NCC, Thr44/Thr48/Thr53) and phosphorylation of SPAK/oxidative stress responsive kinase 1 (phospho-SPAK/OSR1, Ser383/Ser325). The effect of the low-K+ diet on SPAK phosphorylation persisted in WNK4 knockout and SPAK knockin mice, whereas the effects of ANG II on NCC and SPAK were lost in both mouse colonies. This suggests that for NCC activation by ANG II, integrity of the WNK4/SPAK pathway is required, whereas for the low-K+ diet, SPAK phosphorylation occurred despite the absence of WNK4, suggesting the involvement of another WNK (WNK1 or WNK3). Additionally, because NCC activation also occurred in SPAK knockin mice, it is possible that loss of SPAK was compensated by OSR1. The positive effect of the high-K+ diet was observed when the accompanying anion was citrate, whereas the high-KCl diet reduced NCC phosphorylation. However, the effect of the high-K+-citrate diet was aldosterone dependent, and neither metabolic alkalosis induced by bicarbonate, nor citrate administration in the absence of K+ increased NCC phosphorylation, suggesting that it was not due to citrate-induced metabolic alkalosis. Thus, the accompanying anion might modulate the NCC response to the high-K+ diet. PMID:24761002

  16. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric

    NASA Astrophysics Data System (ADS)

    Gopi Krishna, Saramekala; Sarvesh, Dubey; Pramod, Kumar Tiwari

    2015-10-01

    In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson’s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model’s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material. The author, Pramod Kumar Tiwari, was supported by the Science and Engineering Research Board (SERB), Department of Science and Technology, Ministry of Human Resource and Development, Government of India under Young Scientist Research (Grant No. SB/FTP/ETA-415/2012).

  17. The four-gate transistor

    NASA Technical Reports Server (NTRS)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  18. Stanford, Duke, Rice,... and Gates?

    ERIC Educational Resources Information Center

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  19. The four-gate transistor

    NASA Technical Reports Server (NTRS)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  20. Stanford, Duke, Rice,... and Gates?

    ERIC Educational Resources Information Center

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  1. Impact of gate leakage considerations in tunnel field effect transistor design

    NASA Astrophysics Data System (ADS)

    Chaturvedi, Poornendu; Jagadesh Kumar, M.

    2014-07-01

    In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating voltage of 0.5 V. Using calibrated two-dimensional simulations it is shown that even for such a low operating voltage, the gate leakage substantially degrades several subthreshold parameters of the TFET such as the off-state current, minimum subthreshold swing and average subthreshold swing. While the drain-offset as well as the short-gate are effective methods for reducing the gate leakage, we show that if the gate tunneling leakage is not considered, even for these two methods, the overall TFET off-state current will be significantly underestimated. Our results demonstrate the need to carefully account for the gate leakage in the design of TFETs just as it is done for the conventional nanoscale MOSFETs.

  2. Influence of Design and Process Parameters of 32-nm Advanced-Process High- k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

    NASA Astrophysics Data System (ADS)

    Alimin, A. F. Muhammad; Radzi, A. A. Mohd; Sazali, N. A. F.; Hatta, S. F. Wan Muhamad; Soin, N.; Hussin, H.

    2017-10-01

    Negative-bias temperature instability (NBTI) has become a prominent factor limiting scaling of complementary metal-oxide-semiconductor technology. This work presents a comprehensive simulation study on the effects of critical design parameters of 32-nm advanced-process high- k p-channel metal-oxide-semiconductor field-effect transistors on NBTI. The NBTI mechanism and defects were explored for various geometric and process design parameters over a wide range of values. The NBTI simulation method applied in this work follows the on-the-fly method to capture the mechanisms of fast and slow traps. This work illustrates the dependence of the threshold voltage ( V th) degradation on the stress oxide field and stress temperature as well as investigation of the Arrhenius plot for the devices. The temperature insensitivity during short stress time of 1 ms indicates absence of generated defects and presence of preexisting defects. It is also observed that significant defects are generated in the gate stack subsequent to NBTI. The slope obtained from the V th degradation analysis at 1 ks and 375°C shows that changing the SiO2 interfacial layer thickness affects the V th degradation by 96.16% more than changing the HfO2 thickness and by 80.67% more than changing the metal gate thickness. It is also found that the NBTI effect depends on process design considerations, specifically the boron concentration in the highly doped drain, the metal gate work function, and the halo doping concentration; it was observed that higher boron dose and high metal work function may lead to higher V th degradation. However, the halo doping concentration in the advanced 32-nm structure has an insignificant effect on NBTI.

  3. Nanoparticle Based Logic Gates

    NASA Astrophysics Data System (ADS)

    Berven, Christopher; Wybourne, Martin; Longstreth, Lydia

    2003-05-01

    Ligand stabilized gold nanoparticles have novel properties that can be exploited for their use as possible building blocks for room-temperature single electron devices. With a core of 70 gold atoms or less (diameter <= 1.4 nm), the self-capacitance of these particles is a fraction of an atto-Farad. This small capacitance translates into an electrostatic charging energy well in excess of the thermal energy at room temperature. Single electron behavior has been demonstrated in one- and two-dimensional arrays of nanoparticles. In traditional single electron devices, the self-capacitance is negligible, whereas the self-capacitance in nanoparticle based devices can be the dominant capacitance. This means that the effect of charging a nanoparticle chain is highly localized which is in contrast to traditional single electron devices where the induced potential due to an excess electron on an island is felt by many neighboring islands. As a result, the current-voltage characteristics and plots of stable electron occupancy in the arrays have different behavior to that found in traditional devices. We show that this new regime of tunneling behavior can be exploited to create a novel family of single-electron logic gate devices. Using numerical simulation we have found that when a one-dimensional array of nanoparticles is gated in an electron-pump arrangement and properly biased, the behavior is that of an AND gate. The addition of an inverter circuit results in NAND gate behavior, the inverter providing the power necessary for the cascading of multiple NAND gates and the generation of arbitrary logic circuits.

  4. High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

    NASA Astrophysics Data System (ADS)

    Pyo, Ju-Young; Cho, Won-Ju

    2017-03-01

    In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (∼17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (∼87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH‑1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

  5. Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

    SciTech Connect

    Coh, Sinisa; Heeg, Tassilo; Haeni, Jeffery; Biegalski, Michael D; Letteri, James; Bernhagen, M; Reiche, Paul; O'brien, Kevin; Uecker, Rinhold; Trolier-McKinstry, Susan; Schlom, Darrell; Vanderbilt, David

    2010-01-01

    We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO3, SrZrO3, LaHoO3, and LaYO3 are among the most promising candidates for high-K dielectrics among the compounds we considered.

  6. Silicon interfacial passivation layer chemistry for high-k/InP interfaces.

    PubMed

    Dong, Hong; Cabrera, Wilfredo; Qin, Xiaoye; Brennan, Barry; Zhernokletov, Dmitry; Hinkle, Christopher L; Kim, Jiyoung; Chabal, Yves J; Wallace, Robert M

    2014-05-28

    The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.

  7. High-K isomers in transactinide nuclei close to N = 162

    SciTech Connect

    Prassa, V. Nikšić, T.; Vretenar, D.; Lu, Bing-Nan; Ackermann, D.

    2015-10-15

    Transactinide nuclei around neutron number N = 162 display axially deformed equilibrium shapes, as shown in our previous analysis [1] of constrained mean-field energy surfaces and collective excitation spectra. In the present study we are particularly interested in the occurrence of high-K isomers in the axially deformed isotopes of Rf (Z = 104), Sg (Z = 106), Hs (Z = 108), and Ds (Z = 110), with neutron number N = 160 − 166 and the effect of the N=162 closure on the structure and distribution of two-quasiparticle (2qp) states. The evolution of high-K isomers is analysed in a self-consistent axially-symmetric relativistic Hartree-Bogoliubov calculation using the blocking approximation with time-reversal symmetry breaking.

  8. Universal Superreplication of Unitary Gates

    NASA Astrophysics Data System (ADS)

    Chiribella, G.; Yang, Y.; Huang, C.

    2015-03-01

    Quantum states obey an asymptotic no-cloning theorem, stating that no deterministic machine can reliably replicate generic sequences of identically prepared pure states. In stark contrast, we show that generic sequences of unitary gates can be replicated deterministically at nearly quadratic rates, with an error vanishing on most inputs except for an exponentially small fraction. The result is not in contradiction with the no-cloning theorem, since the impossibility of deterministically transforming pure states into unitary gates prevents the application of the gate replication protocol to states. In addition to gate replication, we show that N parallel uses of a completely unknown unitary gate can be compressed into a single gate acting on O (log2N ) qubits, leading to an exponential reduction of the amount of quantum communication needed to implement the gate remotely.

  9. An InAs/high-k/low-k structure: Electron transport and interface analysis

    NASA Astrophysics Data System (ADS)

    Ui, Toshimasa; Mori, Ryousuke; Le, Son Phuong; Oshima, Yoshifumi; Suzuki, Toshi-kazu

    2017-05-01

    We fabricated and investigated an InAs/high-k/low-k structure in comparison with an InAs/low-k structure, where the former and the latter are respectively obtained by bonding of InAs/Al2O3/AlN and InAs on low-k flexible substrates (FS). The InAs/high-k/low-k (InAs/Al2O3/AlN/FS) exhibits electron mobilities immune to interface fluctuation scattering, whereas this scattering is serious for the InAs/low-k (InAs/FS). Moreover, we find that electron sheet concentrations in the InAs/high-k/low-k are significantly higher than those in the InAs/low-k. From InAs/Al2O3 interface analysis by energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higher electron concentrations can be attributed to natural modulation doping from Al2O3 to InAs.

  10. Ion polarization behavior in alumina under pulsed gate bias stress

    SciTech Connect

    Liu, Yu; Diallo, Abdou Karim; Katz, Howard E.

    2015-03-16

    Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔV{sub th} from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

  11. Ion polarization behavior in alumina under pulsed gate bias stress

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Diallo, Abdou Karim; Katz, Howard E.

    2015-03-01

    Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K+), sodium (Na+), and lithium (Li+), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔVth) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔVth over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔVth from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

  12. Noise Gating Solar Images

    NASA Astrophysics Data System (ADS)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  13. Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics

    NASA Astrophysics Data System (ADS)

    Carter, Andrew Daniel

    III-V-based MOSFETs have the potential to exceed the performance of silicon-based MOSFETs due to the semiconductor's small electron effective mass. Modern silicon-based MOSFETs with 22 nm gate lengths utilize high-k gate insulators and non-planar device geometries to optimize device performance. III-V HEMT technology has achieved similar gate lengths, but large source-drain access resistances and the lack of high-quality gate insulators prevent further device performance scaling. Sub-22 nm gate length III-V MOSFETs require metal-semiconductor contact resistivity to be less than 1 ohm-micron squared, gate insulators with less than 1 nm effective oxide thickness, and semiconductor-insulator interface trap densities less than 2E12 per square centimeter per electron volt. This dissertation presents InGaAs-based III-V MOSFET process flows and device results to assess their use in VLSI circuits. Previous III-V MOSFET results focused on long (>100 nm) gate lengths and ion implantation for source-drain region formation. Scaling III-V MOSFETs to shorter gate lengths requires source-drain regions that have low sheet resistance, high mobile charge densities, and low metal-semiconductor contact resistance. MBE- and MOCVD-based raised epitaxial source-drain regrowth meet these requirements. MBE InAs source-drain regrowth samples have shown 0.5 to 2 ohm-micron squared metal semiconductor contact resistivities. MOCVD InGaAs source-drain regrowth samples have shown < 100 ohm-micron single-sided access resistance to InGaAs MOSFETs. Gate insulators on III-V materials require large conduction band offsets to the channel, high dielectric permittivities, and low semiconductor-insulator interface trap densities. An in-situ hydrogen plasma / trimethylaluminum treatment has been developed to lower the gate semiconductor-insulator interface trap density. This treatment, done immediately before gate insulator deposition, has been shown to lower MOS capacitor interface trap densities by more

  14. A quantum Fredkin gate

    PubMed Central

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-01-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

  15. A quantum Fredkin gate.

    PubMed

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  16. Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

    NASA Astrophysics Data System (ADS)

    Carrion, Enrique A.; Serov, Andrey Y.; Islam, Sharnali; Behnam, Ashkan; Malik, Akshay; Xiong, Feng; Bianchi, Massimiliano; Sordan, Roman; Pop, Eric

    2014-05-01

    We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trapping mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two higher than those obtained from simple DC characterization. We also observe drain-bias-induced charge trapping effects at lateral fields greater than 0.1 V/um. In addition, using modeling and capacitance-voltage measurements we extract charge trap densities up to 10^12 1/cm^2 in the top gate dielectric (here Al2O3). Our study illustrates important time- and field-dependent imperfections of top-gated GFETs with high-k dielectrics, which must be carefully considered for future developments of this technology

  17. 100-nm gate lithography for double-gate transistors

    NASA Astrophysics Data System (ADS)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  18. Impact of gate geometry on ionic liquid gated ionotronic systems

    NASA Astrophysics Data System (ADS)

    Wong, A. T.; Noh, J. H.; Pudasaini, P. R.; Wolf, B.; Balke, N.; Herklotz, A.; Sharma, Y.; Haglund, A. V.; Dai, S.; Mandrus, D.; Rack, P. D.; Ward, T. Z.

    2017-04-01

    Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard "side gate" 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

  19. Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2017-05-01

    Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low- k). To supplement low- k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high- k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high- k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3. [Figure not available: see fulltext.

  20. Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2017-01-01

    Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low-k). To supplement low-k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high-k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high-k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3.

  1. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

    SciTech Connect

    Wang, C. H. Hsu, W. C.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Passlack, M.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Diaz, C. H.; Ramvall, P.; Lind, E.; Wernersson, L.-E.; Droopad, R.

    2014-04-15

    Two high-k dielectric materials (Al{sub 2}O{sub 3} and HfO{sub 2}) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D{sub it}). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al{sub 2}O{sub 3} and HfO{sub 2}) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO{sub 2} and Al{sub 2}O{sub 3} MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D{sub it}) profiles show D{sub it} minima of 6.1 × 10{sup 12}/6.5 × 10{sup 12} and 6.6 × 10{sup 12}/7.3 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3} and HfO{sub 2}, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D{sub it}) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.

  2. Multibit gates for quantum computing.

    PubMed

    Wang, X; Sørensen, A; Mølmer, K

    2001-04-23

    We present a general technique to implement products of many qubit operators communicating via a joint harmonic oscillator degree of freedom in a quantum computer. By conditional displacements and rotations we can implement Hamiltonians which are trigonometric functions of qubit operators. With such operators we can effectively implement higher order gates such as Toffoli gates and C(n)-NOT gates, and we show that the entire Grover search algorithm can be implemented in a direct way.

  3. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Anderson, Travis J.; Wheeler, Virginia D.; Shahin, David I.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Christou, Aris; Kub, Francis J.; Eddy, Charles R., Jr.

    2016-07-01

    Advanced applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) in high-power RF and power switching are driving the need for insulated gate technology. We present a metal-oxide-semiconductor (MOS) gate structure using atomic-layer-deposited ZrO2 as a high-k, high-breakdown gate dielectric for reduced gate leakage and a recessed barrier structure for enhancement mode operation. Compared to a Schottky metal-gate HEMT, the recessed MOS-HEMT structure demonstrated a reduction in the gate leakage current by 4 orders of magnitude and a threshold voltage shift of +6 V to a record +3.99 V, enabled by a combination of a recessed barrier structure and negative oxide charge.

  4. Floating gate circuits in MOSIS

    NASA Astrophysics Data System (ADS)

    Mann, James R.

    1990-11-01

    The MOSIS foundry offers a two-poly CMOS process that can be used as a floating gate technology, albeit not with the same performance as commercial EEPROM foundries. This report characterizes the structures and programming techniques necessary to build floating gate structures and associated high-voltage addressing circuitry on the low-noise analog process available through MOSIS. Techniques that are used include Fowler-Nordheim tunneling, channel hot-electron injection, and avalanche injection. The dielectric materials between the floating gate and both the control gate and substrate are characterized. Unconventional lightly doped drain FET devices and additional circuit techniques for handling the high-voltage programming signals are presented.

  5. Compact gate valve

    DOEpatents

    Bobo, Gerald E.

    1977-01-01

    This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

  6. ONE SHAKE GATE FORMER

    DOEpatents

    Kalibjian, R.; Perez-Mendez, V.

    1957-08-20

    An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

  7. Energy band alignment of high-k oxide heterostructures at MoS2/Al2O3 and MoS2/ZrO2 interfaces

    NASA Astrophysics Data System (ADS)

    Pradhan, Sangram K.; Xiao, Bo; Pradhan, Aswini K.

    2016-09-01

    Substrate-induced electron energy band alignments of ultrathin molybdenum disulfide (MoS2) films are investigated using photoemission spectroscopy. Thin layer MoS2/Al2O3 and MoS2/ZrO2 interfaces show valence band offset (VBO) values of 3.21 eV and 2.77 eV, respectively. The corresponding conduction-band offset (CBO) values are 3.63 eV and 1.27 eV. Similarly, the calculated VBO and CBO values for an ultrathin layer of MoS2/SiO2 are estimated to be 4.25 and 2.91 eV, respectively. However, a very thick layer of MoS2 on Al2O3 and ZrO2 layers increases the CBO and VBO values by 0.31 eV and 0.2 eV, respectively, due to the shifting of the Mo 4dz2 band toward the Fermi level. The atomic force microscopy images show that the films are atomically smooth and favor the formation of a high-quality interface between the substrate and the film. The investigated luminescence spectra reveal that the MoS2 films show very strong interactions with different high-k surfaces, whereas the Raman spectrum is only weakly influenced by the different dielectric substrates. This interesting finding encourages the application of high-k oxide insulators as gate materials in MoS2-based complementary metal-oxide semiconductors and other electronic devices.

  8. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

    PubMed Central

    Tao, J.; Zhao, C.Z.; Zhao, C.; Taechakumput, P.; Werner, M.; Taylor, S.; Chalker, P. R.

    2012-01-01

    In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed. PMID:28817021

  9. Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Maity, N. P.; Thakur, R. R.; Maity, Reshmi; Thapa, R. K.; Baishya, S.

    2016-10-01

    In this paper, the interface charge densities (Dit) are studied and analyzed for ultra thin dielectric metal oxide semiconductor (MOS) devices using different high-k dielectric materials such as Al2O3, ZrO2 and HfO2. The Dit have been calculated by a new approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with high-k. For the same oxide thickness, SiO2 has the lowest Dit and found to be the order of 1011cm-2eV-1. Linear increase in Dit has been observed as the dielectric constant of the oxide increases. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1×1017cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  10. Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wu, Hung-Chin; Hung, Chih-Chien; Chiu, Yu-Cheng; Tung, Shih-Huang; Chen, Wen-Chang

    2016-09-01

    High Performance organic field-effect transistor (OFET) memory devices were successfully prepared using new dielectric materials, poly(N-(hydroxymethyl)acrylamide-co-5 -(9-(5-(diethylamino)pentyl)-2-(4-vinylphenyl)-9H-fluorene (P(NMA-co-F6NSt)), which contained chemical cross-linkable segment (NMA) and hole trapping building block (F6NSt). The high k characteristics of P(NMA-co-F6NSt)) led to a low voltage operation, a small power consumption, and a good digital information storage capacity. Such P(NMA-co-F6NSt) dielectrics in OFET memories with variant NMA/F6NSt molar ratios (100/0 (P1), 95/5 (P2), 80/20 (P3), and 67/33 (P4)) showed excellent insulating properties and good charge storage performance under a low operating voltage below ±5V, due to the tightly network structures after crosslinking and well-dispersed trapping cites (i.e. fluorene moieties). P3-based memory device, in particular, exhibited largest memory window of 4.13 V among the studied polymers, and possessed stable data retention stability over 104 s with a high on/off current ratio (i.e. 104) and good endurance characteristics of more than 200 write-read-write-erase (WRER) cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel synthesized high-k copolymers.

  11. Influence of the octupole mode on nuclear high-K isomeric properties

    NASA Astrophysics Data System (ADS)

    Minkov, Nikolay; Walker, Phil

    2014-05-01

    The influence of quadrupole-octupole deformations on the energy and magnetic properties of high-K isomeric states in even-even actinide (U, Pu, Cm, Fm, No), rare-earth (Nd, Sm and Gd), and superheavy (^{270}\\text{Ds}) nuclei is examined within a deformed shell model with pairing interaction. The neutron two-quasiparticle (2qp) isomeric energies and magnetic dipole moments are calculated over a wide range in the plane of quadrupole and octupole deformations. In most cases the magnetic moments exhibit a pronounced sensitivity to the octupole deformation. At the same time, the calculations outline three different groups of nuclei: with pronounced, shallow, and missing minima in the 2qp energy surfaces with respect to the octupole deformation. The result indicates regions of nuclei with octupole softness as well as with possible octupole deformation in the high-K isomeric states. These findings show the need for further theoretical analysis as well as of detailed experimental measurements of magnetic moments in heavy deformed nuclei.

  12. Elemental maps in human allantochorial placental vessels cells: 1. High K + and acetylcholine effects

    NASA Astrophysics Data System (ADS)

    Michelet-Habchi, C.; Barberet, Ph.; Dutta, R. K.; Guiet-Bara, A.; Bara, M.; Moretto, Ph.

    2003-09-01

    Regulation of vascular tone in the fetal extracorporeal circulation most likely depends on circulating hormones, local paracrine mechanisms and changes in membrane potential of vascular smooth muscle cells (VSMCs) and of vascular endothelial cells (VECs). The membrane potential is a function of the physiological activities of ionic channels (particularly, K + and Ca 2+ channels in these cells). These channels regulate the ionic distribution into these cells. Micro-particle induced X-ray emission (PIXE) analysis was applied to determine the ionic composition of VSMC and of VEC in the placental human allantochorial vessels in a physiological survival medium (Hanks' solution) modified by the addition of acetylcholine (ACh: which opens the calcium-sensitive K + channels, K Ca) and of high concentration of K + (which blocks the voltage-sensitive K + channels, K df). In VSMC (media layer), the addition of ACh induced no modification of the Na, K, Cl, P, S, Mg and Ca concentrations and high K + medium increased significantly the Cl and K concentrations, the other ion concentrations remaining constant. In endothelium (VEC), ACh addition implicated a significant increase of Na and K concentration, and high K + medium, a significant increase in Cl and K concentration. These results indicated the importance of K df, K Ca and K ATP channels in the regulation of K + intracellular distribution in VSMC and VEC and the possible intervention of a Na-K-2Cl cotransport and corroborated the previous electrophysiological data.

  13. 16. Little Hell Gate Bridge with Big Hell Gate Bridge ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. Little Hell Gate Bridge with Big Hell Gate Bridge in background. Wards Island, New York Co., NY. Sec. 4207, MP 8.02. - Northeast Railroad Corridor, Amtrak Route between New Jersey/New York & New York/Connecticut State Lines, New York County, NY

  14. TRP channel gating physiology.

    PubMed

    Nieto-Posadas, Andrés; Jara-Oseguera, Andrés; Rosenbaum, Tamara

    2011-01-01

    Transient Receptor Potential (TRP) cation channels participate in several processes of vital importance in cell and organism physiology, and have been demonstrated to participate in the detection of sensory stimuli. The thermo TRP's reviewed: TRPV1 (vanilloid 1), TRPM8 (melastatin 8) and TRPA1 (ankyrin-like 1) are known to integrate different chemical and physical stimuli such as changes in temperature and sensing different irritant or pungent compounds. However, despite the physiological importance of these channels the mechanisms by which they detect incoming stimuli, how the sensing domains are coupled to channel gating and how these processes are connected to specific structural regions in the channel are not fully understood, but valuable information is available. Many sites involved in agonist detection have been characterized and gating models that describe many features of the channel's behavior have been put forward. In this review we will survey some of the key findings concerning the structural and molecular mechanisms of TRPV1, TRPA1 and TRPM8 activation.

  15. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  16. Nitride passivation of the interface between high-k dielectrics and SiGe

    NASA Astrophysics Data System (ADS)

    Sardashti, Kasra; Hu, Kai-Ting; Tang, Kechao; Madisetti, Shailesh; McIntyre, Paul; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Kachian, Jessica; Dong, Lin; Fruhberger, Bernd; Kummel, Andrew C.

    2016-01-01

    In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  17. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    NASA Astrophysics Data System (ADS)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm-2 eV-1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement.

  18. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    PubMed Central

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

  19. Penn State DOE GATE Program

    SciTech Connect

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  20. Gates Learns to Think Big

    ERIC Educational Resources Information Center

    Robelen, Erik W.

    2006-01-01

    This article discusses how the philanthropy of Microsoft Corp software magnate co-chairs, Bill Gates and his wife Melinda, are reshaping the American high school nowadays. Gates and his wife have put the issue on the national agenda like never before, with a commitment of more than 1.3 billion US dollars this decade toward the foundation's agenda…

  1. Gates Learns to Think Big

    ERIC Educational Resources Information Center

    Robelen, Erik W.

    2006-01-01

    This article discusses how the philanthropy of Microsoft Corp software magnate co-chairs, Bill Gates and his wife Melinda, are reshaping the American high school nowadays. Gates and his wife have put the issue on the national agenda like never before, with a commitment of more than 1.3 billion US dollars this decade toward the foundation's agenda…

  2. On plant roots logical gates.

    PubMed

    Adamatzky, Andrew; Sirakoulis, Georgios Ch; Martínez, Genaro J; Baluška, Frantisek; Mancuso, Stefano

    Theoretical constructs of logical gates implemented with plant roots are morphological computing asynchronous devices. Values of Boolean variables are represented by plant roots. A presence of a plant root at a given site symbolises the logical True, an absence the logical False. Logical functions are calculated via interaction between roots. Two types of two-inputs-two-outputs gates are proposed: a gate 〈x, y〉→〈xy, x+y〉 where root apexes are guided by gravity and a gate 〈x,y〉→〈x¯y,x〉 where root apexes are guided by humidity. We propose a design of binary half-adder based on the gates. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Protected gates for superconducting qubits

    NASA Astrophysics Data System (ADS)

    Brooks, Peter; Kitaev, Alexei; Preskill, John

    2013-05-01

    We analyze the accuracy of quantum phase gates acting on “0-π qubits” in superconducting circuits, where the gates are protected against thermal and Hamiltonian noise by continuous-variable quantum error-correcting codes. The gates are executed by turning on and off a tunable Josephson coupling between an LC oscillator and a qubit or pair of qubits; assuming perfect qubits, we show that the gate errors are exponentially small when the oscillator's impedance L/C is large compared to ℏ/4e2≈1kΩ. The protected gates are not computationally universal by themselves, but a scheme for universal fault-tolerant quantum computation can be constructed by combining them with unprotected noisy operations. We validate our analytic arguments with numerical simulations.

  4. Dielectric tensors of high-k Pbnm perovskites from first principles

    NASA Astrophysics Data System (ADS)

    Coh, Sinisa; Vanderbilt, David

    2009-03-01

    Among the materials under consideration for future high-k dielectrics in MOSFET and other microelectronic devices are several perovskites having space group Pbnm. Among these are LaLuO3, SrBO3 (B = Zr, Hf), AScO3 (A = La, Pr, Nd, Sm, Gd, Tb, Dy), and LaB1/2Zr1/2O3 (B = Ca, Mg) (with lower symmetry), which are all compatible with growth on silicon and can have higher dielectric constants than HfO2. Using first-principles DFT methods with ultrasoft pseudopotentials and GGA energy functionals, we compute the dielectric tensors, structural properties, and phonon spectra of these materials. We analyze the dependence of these properties on chemical composition, and compare with experiments where possible. We also focus on correlation between dielectric tensor anisotropy and octahedra rotation angles.

  5. Graphene liquid crystal retarded percolation for new high-k materials

    NASA Astrophysics Data System (ADS)

    Yuan, Jinkai; Luna, Alan; Neri, Wilfrid; Zakri, Cécile; Schilling, Tanja; Colin, Annie; Poulin, Philippe

    2015-11-01

    Graphene flakes with giant shape anisotropy are extensively used to establish connectedness electrical percolation in various heterogeneous systems. However, the percolation behaviour of graphene flakes has been recently predicted to be far more complicated than generally anticipated on the basis of excluded volume arguments. Here we confirm experimentally that graphene flakes self-assemble into nematic liquid crystals below the onset of percolation. The competition of percolation and liquid crystal transition provides a new route towards high-k materials. Indeed, near-percolated liquid-crystalline graphene-based composites display unprecedented dielectric properties with a dielectric constant improved by 260-fold increase as compared with the polymer matrix, while maintaining the loss tangent as low as 0.4. This performance is shown to depend on the structure of monodomains of graphene liquid-crystalline phases. Insights into how the liquid crystal phase transition interferes with percolation transition and thus alters the dielectric constant are discussed.

  6. A charge transport study in diamond, surface passivated by high-k dielectric oxides

    SciTech Connect

    Kovi, Kiran Kumar Majdi, Saman; Gabrysch, Markus; Isberg, Jan

    2014-11-17

    The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

  7. Maintaining K+ balance on the low-Na+, high-K+ diet

    PubMed Central

    Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

    2016-01-01

    A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

  8. Maintaining K(+) balance on the low-Na(+), high-K(+) diet.

    PubMed

    Cornelius, Ryan J; Wang, Bangchen; Wang-France, Jun; Sansom, Steven C

    2016-04-01

    A low-Na(+), high-K(+) diet (LNaHK) is considered a healthier alternative to the "Western" high-Na(+) diet. Because the mechanism for K(+) secretion involves Na(+) reabsorptive exchange for secreted K(+) in the distal nephron, it is not understood how K(+) is eliminated with such low Na(+) intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K(+) balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K(+) channels, renal outer medullary K(+) and large-conductance K(+) channels, located in principal and intercalated cells. Here, we review these recent advances.

  9. Graphene liquid crystal retarded percolation for new high-k materials

    PubMed Central

    Yuan, Jinkai; Luna, Alan; Neri, Wilfrid; Zakri, Cécile; Schilling, Tanja; Colin, Annie; Poulin, Philippe

    2015-01-01

    Graphene flakes with giant shape anisotropy are extensively used to establish connectedness electrical percolation in various heterogeneous systems. However, the percolation behaviour of graphene flakes has been recently predicted to be far more complicated than generally anticipated on the basis of excluded volume arguments. Here we confirm experimentally that graphene flakes self-assemble into nematic liquid crystals below the onset of percolation. The competition of percolation and liquid crystal transition provides a new route towards high-k materials. Indeed, near-percolated liquid-crystalline graphene-based composites display unprecedented dielectric properties with a dielectric constant improved by 260-fold increase as compared with the polymer matrix, while maintaining the loss tangent as low as 0.4. This performance is shown to depend on the structure of monodomains of graphene liquid-crystalline phases. Insights into how the liquid crystal phase transition interferes with percolation transition and thus alters the dielectric constant are discussed. PMID:26567720

  10. Hybrid gate dielectric materials for unconventional electronic circuitry.

    PubMed

    Ha, Young-Geun; Everaerts, Ken; Hersam, Mark C; Marks, Tobin J

    2014-04-15

    Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry. However, it does not satisfy many of the performance requirements for the aforementioned semiconductors due to its relatively low dielectric constant and intransigent processability. High-k inorganics such as hafnium dioxide (HfO2) or zirconium dioxide (ZrO2) offer some increases in performance, but scientists have great difficulty depositing these materials as smooth films at temperatures compatible with flexible plastic substrates. While various organic polymers are accessible via chemical synthesis and readily form films from solution, they typically exhibit low capacitances, and the corresponding transistors operate at unacceptably high voltages. More recently, researchers have combined the favorable properties of high-k metal oxides and π-electron organics to form processable, structurally well-defined, and robust self-assembled multilayer nanodielectrics, which enable high-performance transistors with a wide variety of unconventional semiconductors. In this Account, we review recent advances in organic-inorganic hybrid gate dielectrics, fabricated by multilayer self-assembly, and their remarkable synergy with unconventional semiconductors. We first discuss the principals and functional

  11. Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

    NASA Astrophysics Data System (ADS)

    Choi, Woo Young; Lee, Hyun Kook

    2016-06-01

    The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

  12. Impact of post metal annealing on gate work function engineering for advanced MOS applications

    NASA Astrophysics Data System (ADS)

    Kumar, S. Sachin; Prasad, Amitesh; Sinha, Amrita; Raut, Pratikhya; Das, Palash; Mahato, S. S.; Mallik, S.

    2016-05-01

    Ultra thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (Vfb) and hysteresis (ΔVfb) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impact of PMA on interface state density (Dit), border trap density (Nbt) and oxide trap density (Qf/q) of high-k gate stack were also examined for all the devices. The Nbt and frequency dispersion significantly reduces to ~2.77x1010 cm-2 and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x1012 eV-1cm-2 after PMA (350°C) in N2, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x1012 eV-1cm-2) after PMA.

  13. Impact of gate geometry on ionic liquid gated ionotronic systems

    DOE PAGES

    Wong, Anthony T.; Noh, Joo Hyon; Pudasaini, Pushpa Raj; ...

    2017-01-23

    Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard “side gate” 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. Finally, these findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

  14. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

    NASA Astrophysics Data System (ADS)

    Jin, Zhang; Yuling, Liu; Chenqi, Yan; Yangang, He; Baohong, Gao

    2016-04-01

    The replacement metal gate (RMG) defectivity performance control is very challenging in high-k metal gate (HKMG) chemical mechanical polishing (CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP. Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the Natural Science Foundation for the Youth of Hebei Province (Nos. F2012202094, F2015202267), and the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology (No. 2013010).

  15. Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

    NASA Astrophysics Data System (ADS)

    Lucovsky, G.; Hong, J. G.; Fulton, C. C.; Zou, Y.; Nemanich, R. J.; Ade, H.; Scholm, D. G.; Freeouf, J. L.

    2004-08-01

    This paper uses X-ray absorption spectroscopy to the study of electronic structure of the transition metal oxides TiO2, ZrO2 and HfO2, Zr and Hf silicate alloys, and the complex oxides, GdScO3, DyScO3 and HfTiO4. Qualitative and quantitative differences are identified between dipole allowed intra-atomic transitions from core p-states to empty d*- and s*-states, and inter-atomic transitions from transition metal and oxide 1s states to O 2p* that are mixed with transition metal d*- and s*-states for transition metal oxides and silicate alloys. The complex oxide studies have focused on the O K1 edge spectra. Differences between the spectral peak energies of the lowest d*-features in the respective O K1 spectra are demonstrated to scale with optical band gap differences for TiO2, ZrO2 and HfO2, as well as the complex oxides providing important information relevant to applications of TM oxides as high-k gate dielectrics in advanced Si devices. This is demonstrated through scaling relationships between (i) conduction band offset energies between Si and the respective dielectrics, and the optical band gaps, and (ii) the optical band gaps, the conduction band offset energies, and the electron tunneling masses as functions of the atomic d-state energies of the transition metal atoms.

  16. Degradation of High-k/Interface Layer Structures by H Atoms and Interface Engineering with O Atom Manipulation

    NASA Astrophysics Data System (ADS)

    Kato, K.; Hirano, I.; Matsushita, D.; Nakasaki, Y.; Mitani, Y.

    2011-12-01

    With regard to the growing numbers of H atoms in high-k/SiO2/Si systems, it is revealed through first principles calculations that degradation of high-k/interface layer structures has been found to occur from the interface layers by H atoms, even if the interface defects are terminated with H atoms by forming gas annealing. O termination is proposed to prevent this degradation. The effects of H and O atoms are verified by experimental analyses.

  17. Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET

    NASA Astrophysics Data System (ADS)

    Goel, Kirti; Saxena, Manoj; Gupta, Mridula; Gupta, R. S.

    2007-04-01

    A new device architecture triple material gate oxide stack (TRIMGAS) epitaxial channel (Epi) MOSFET for reduced short channel effects (SCEs) at short gate lengths is proposed. The structure has a gate electrode consisting of three different materials, an oxide stack having high-K material on top of an SiO2 layer and an epitaxial channel profile. A two-dimensional analytical threshold voltage and drain current model has been presented. An analysis of subthreshold slope and I-V characteristics has been done for the first time including all regions of operation. The model proposed is capable of modelling various other MOSFET structures: (a) dual material gate stack (DUMGAS), (b) single material gate stack (SIMGAS), (c) straddle-gate/EJ/side-gate MOSFET oxide stack, (d) dual/hetero material gate (DMG/HMG), (e) single material gate (SMG) and (f) triple material gate (TMG), all with and without an epitaxial channel profile. A 2D device simulator, ATLAS, is used over a wide range of parameters and bias conditions to validate the analytical results.

  18. Nitride passivation of the interface between high-k dielectrics and SiGe

    SciTech Connect

    Sardashti, Kasra; Hu, Kai-Ting; Tang, Kechao; McIntyre, Paul; Madisetti, Shailesh; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Kachian, Jessica; Dong, Lin; Fruhberger, Bernd; Kummel, Andrew C.

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  19. Commentary on WHO GATE Initiative.

    PubMed

    Cooper, Rory A

    2017-01-01

    Assistive technology is essential to people with spinal cord injuries (SCI) for living and participating in their communities. However, many people with SCI do not have access to adequate assistive technology and qualified services. The World Health Organization (WHO) is addressing this need through the Global Cooperation on Assistive Technology (GATE). The GATE initiative is focused on improving access to high-quality affordable AT world-wide. GATE working to meet the AT sector needs in response to the call by WHO to increase access to essential, high-quality, safe, effective and affordable medical devices, which is one of the six WHO leadership priorities.

  20. Superconducting gates with fluxon logics

    NASA Astrophysics Data System (ADS)

    Nacak, H.; Kusmartsev, F. V.

    2010-10-01

    We have developed several logic gates (OR, XOR, AND and NAND) made of superconducting Josephson junctions. The gates based of the flux cloning phenomenon and high speed of fluxons moving in Josephson junctions of different shapes. In a contrast with previous design the gates operates extremely fast since fluxons are moving with the speed close to the speed of light. We have demonstrated their operations and indicated several ways to made a more complicated logic elements which have at the same time a compact form.

  1. Robust Soldier Crab Ball Gate

    NASA Astrophysics Data System (ADS)

    Gunji, Yukio-Pegio; Nishiyama, Yuta; Adamatzky, Andrew

    2011-09-01

    Based on the field observation of soldier crabs, we previously proposed a model for a swarm of soldier crabs. Here, we describe the interaction of coherent swarms in the simulation model, which is implemented in a logical gate. Because a swarm is generated by inherent perturbation, a swarm can be generated and maintained under highly perturbed conditions. Thus, the model reveals a robust logical gate rather than stable one. In addition, we show that the logical gate of swarms is also implemented by real soldier crabs (Mictyris guinotae).

  2. The Meaning of High K2O Volcanism In the U.S. Cordillera

    NASA Astrophysics Data System (ADS)

    Putirka, K. D.; Busby, C.

    2010-12-01

    K2O contents provide a highly effective discriminant between volcanic rocks erupted in the Cascades and Basin-and Range-provinces, with Cascades volcanics having lower K2O contents at a given SiO2. To differentiate these suites, we use a K-index, where K-index = K2Oobserved - 0.12[SiO2] + 5.1 (oxides in wt. %). In the Sierra Nevada, regional K2O contents are not controlled by wall-rock assimilation. In addition, none are candidates for K-metasomatism, and none are likely to be derived by partial melting of a K-metasomatized source. As to the latter issue, even volcanic rocks with the highest K2O in the Sierra Nevada have K2O/Na2O <5, and most such ratios are <3. In contrast, K-metasomatized rocks have K2O/Na2O >5, and as high as 30-40 (Brooks and Snee (1996). Also, Sierra-wide K2O variations are not connected to indices of subduction-related mantle enrichments (such as La/Nb, Ba/Nb or Sr/P2O5), and so K2O is unconnected to regional variations in source composition. K2O contents are instead controlled by the degree of partial melting (F) in the mantle source and fractional crystallization. Putirka and Busby (2007) show that maximum K2O in the Sierra increases with increasing crust thickness, and this relationship also holds across the U.S. the Cordillera (at 39oN latitude). This relationship implies that low F magmas more easily transit thick, low-density upper crust (Putirka and Busby, 2007), which is a consequence of the fact that low F melts are enriched not just in K2O, but also in H2O, which greatly lowers magma density (Ochs and Lange, 1999). This model can explain the contrast in Cascade and Basin-and-Range K2O contents: the modern Cascades are built on the thinner crust of accreted terranes, while typical Basin-and-Range volcanics are erupted on older, and thicker, cratonized crust. Mean crust density, however, cannot be the only explanation of high K2O. In the central Sierra Nevada, the Colorado River Extensional Corridor, and at the Lunar Crater

  3. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Balmukund Rahi, Shiromani; Ghosh, Bahniman; Asthana, Pranav

    2014-11-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10-6 A/μm, the off current remains as low as 9.1 × 10-14 A/μm. So ION/IOFF ratio of ≃ 108 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO2 gate material.

  4. Reversible logic gates on Physarum Polycephalum

    SciTech Connect

    Schumann, Andrew

    2015-03-10

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum.

  5. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less...

  6. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm...

  7. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less...

  8. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm...

  9. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  10. High-k Scattering Receiver Mixer Performance for NSTX-U

    NASA Astrophysics Data System (ADS)

    Barchfeld, Robert; Riemenschneider, Paul; Domier, Calvin; Luhmann, Neville; Ren, Yang; Kaita, Robert

    2016-10-01

    The High-k Scattering system detects primarily electron-scale turbulence k θ spectra for studying electron thermal transport in NSTX-U. A 100 mW, 693 GHz probe beam passes through plasma, and scattered power is detected by a 4-pixel quasi optical, mixer array. Remotely controlled receiving optics allows the scattering volume to be located from core to edge with a k θ span of 7 to 40 cm-1. The receiver array features 4 RF diagonal input horns, where the electric field polarization is aligned along the diagonal of a square cross section horn, at 30 mm channel spacing. The local oscillator is provided by a 14.4 GHz source followed by a x48 multiplier chain, giving an intermediate frequency of 1 GHz. The receiver optics receive 4 discreet scattering angles simultaneously, and then focus the signals as 4 parallel signals to their respective horns. A combination of a steerable probe beam, and translating receiver, allows for upward or downward scattering which together can provide information about 2D turbulence wavenumber spectrum. IF signals are digitized and stored for later computer analysis. The performance of the receiver mixers is discussed, along with optical design features to enhance the tuning and performance of the mixers. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

  11. Tb2O3 thin films: An alternative candidate for high-k dielectric applications

    NASA Astrophysics Data System (ADS)

    Gray, Nathan W.; Prestgard, Megan C.; Tiwari, Ashutosh

    2014-12-01

    We are reporting the growth and structural, optical, and dielectric properties of Tb2O3, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb2O3 thin-films on four different substrates: Si(100), SrTiO3(100), LaAlO3(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10-1 Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10-6 Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb2O3 is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb2O3 films, respectively.

  12. Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

    NASA Astrophysics Data System (ADS)

    Pavunny, S. P.; Thomas, R.; Kumar, A.; Murari, N. M.; Katiyar, R. S.

    2012-05-01

    The temperature and frequency dependent dielectric properties and leakage conduction mechanism in LaGdO3 (LGO) ceramics have been studied, and this material has been identified as a potential high-k candidate for the future complementary metal-oxide-semiconductor (CMOS) and dynamic random access memory (DRAM) technology nodes. The dielectric constant and the loss tangent at 100 kHz were ˜21.5 and ˜0.003, respectively, at ambient conditions without any significant temperature and voltage dependence. The ac conductivity shows the typical features of universal dynamic response (UDR) and obey the double power law σac=σdc+Aωn1+Bωn2 with three types of temperature dependent conduction processes involved; (i) a dc plateau (< 3 kHz) due to long range translational hopping, (ii) a mid frequency region due to the short range hopping (3-100 kHz), and (iii) a high frequency region due to localized or reorientational hopping (100-1000 kHz). The temperature dependent dc conductivity follows the Arrhenius relation with activation energies of 0.05 eV in the 200-400 K range and 0.92 eV in the 400-600 K range. The leakage current behavior reveals bulk limited Poole-Frenkel (PF) conduction mechanism and the estimated optical dielectric constant (ɛ∞) is 3.6.

  13. The Gates, 1979-2005

    ERIC Educational Resources Information Center

    School Arts: The Art Education Magazine for Teachers, 2005

    2005-01-01

    One art critic called it pure Despite the mixed reviews of Christo and Jeanne-Claude's temporary art installation in New York's Central Park, the public reaction to The Gates was largely positive.The Gates consisted of 7,500 orange PVC frames straddling the park's walkways that varied in widths from 5 1/2 feet to 18 feet. Eight-foot-long ripstop…

  14. The Gates, 1979-2005

    ERIC Educational Resources Information Center

    School Arts: The Art Education Magazine for Teachers, 2005

    2005-01-01

    One art critic called it pure Despite the mixed reviews of Christo and Jeanne-Claude's temporary art installation in New York's Central Park, the public reaction to The Gates was largely positive.The Gates consisted of 7,500 orange PVC frames straddling the park's walkways that varied in widths from 5 1/2 feet to 18 feet. Eight-foot-long ripstop…

  15. Quantum gates with topological phases

    SciTech Connect

    Ionicioiu, Radu

    2003-09-01

    We investigate two models for performing topological quantum gates with the Aharonov-Bohm (AB) and Aharonov-Casher (AC) effects. Topological one- and two-qubit Abelian phases can be enacted with the AB effect using charge qubits, whereas the AC effect can be used to perform all single-qubit gates (Abelian and non-Abelian) for spin qubits. Possible experimental setups suitable for a solid-state implementation are briefly discussed.

  16. A molecular logic gate

    PubMed Central

    Kompa, K. L.; Levine, R. D.

    2001-01-01

    We propose a scheme for molecule-based information processing by combining well-studied spectroscopic techniques and recent results from chemical dynamics. Specifically it is discussed how optical transitions in single molecules can be used to rapidly perform classical (Boolean) logical operations. In the proposed way, a restricted number of states in a single molecule can act as a logical gate equivalent to at least two switches. It is argued that the four-level scheme can also be used to produce gain, because it allows an inversion, and not only a switching ability. The proposed scheme is quantum mechanical in that it takes advantage of the discrete nature of the energy levels but, we here discuss the temporal evolution, with the use of the populations only. On a longer time range we suggest that the same scheme could be extended to perform quantum logic, and a tentative suggestion, based on an available experiment, is discussed. We believe that the pumping can provide a partial proof of principle, although this and similar experiments were not interpreted thus far in our terms. PMID:11209046

  17. Logical gates in actin monomer.

    PubMed

    Adamatzky, Andrew

    2017-09-18

    We evaluate information processing capacity of a single actin molecule by calculating distributions of logical gates implemented by the molecule via propagating patterns of excitation. We represent a filamentous actin molecule as an excitable automaton network (F-actin automaton). where every atom updates its state depending on states of atoms its connected to with chemical bonds (hard neighbours) and atoms being in physical proximity to the atom (soft neighbours). A resting atom excites if a sum of its excited hard neighbours and a weighted sum of its soft neighbours belong to some specified interval. We demonstrate that F-actin automata implement OR, AND, XOR and AND-NOT gates via interacting patterns of excitation. Gate AND is the most common gate and gate XOR is the rarest. Using the architectures of gates discovered we implement one bit half-adder and controlled-not circuits in the F-actin automata. Speed and space values of the F-actin molecular computers are discussed.

  18. Latest design of gate valves

    SciTech Connect

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  19. Phloridzin inhibits high K+-induced contraction via the inhibition of sodium: glucose cotransporter 1 in rat ileum

    PubMed Central

    KANDA, Hidenori; KANEDA, Takeharu; KAWAGUCHI, Akira; SASAKI, Noriyasu; TAJIMA, Tsuyoshi; URAKAWA, Norimoto; SHIMIZU, Kazumasa; SUZUKI, Hiroetsu

    2017-01-01

    Recent studies have shown that phloridzin, an inhibitor of sodium–glucose cotransporter (SGLT), strongly decreases high K+-induced contraction in phasic muscle, such as tenia coli, but slightly affects tonic muscle, such as trachea . In this study, we examined the inhibitory mechanism of phloridzin on high K+-induced muscle contraction in rat ileum, a phasic muscle. Phloridzin inhibited the high K+-induced contraction in the ileum and the aorta, and the relaxing effect of phloridzin at 1 mM in the ileum was approximately five-fold more potent than that in the aorta. The expression of SGLT1 mRNA in the ileum was higher than that of the aorta. Phloridzin significantly inhibited NADH/NAD ratio and phosphocreatine (PCr) content in the ileum; however, application of pyruvate recovered the inhibition of contraction and PCr content, but had no effect on ratio of NADH/NAD. High K+ increased 2-(N (7-nitrobenz-2-oxa-1,3-diazol-4-yl) amino)-2-deoxyglucose (2-NBDG) uptake in ileal smooth muscle cells, and phloridzin inhibited the increase in a concentration-dependent manner. These results suggest that phloridzin inhibits high K+-induced contraction because of the inhibition of energy metabolism via the inhibition of SGLT1. PMID:28190822

  20. Goosenest Volcano, southern Oregon: High K[sub 2]O, BA and Sr basaltic andesite extrusives

    SciTech Connect

    Mertzman, S.A. . Dept. of Geosciences)

    1992-01-01

    Goosenest Volcano, a cinder cone with coeval lava flows, is located nearly 5 miles WNW of the south entrance into Crater Lake National Park. A summit crater unmodified by glacial erosion but with a blanket of Mazama pumice, suggests the age of latest activity to be between 20,000 and 6850 B.P. The pyroclastics and lavas from Goosenest are augite olivine basaltic andesites, with a strong tendency for these minerals to form 2--5 mm in diameter glomeroporphyritic clumps [+-] plagioclase. Three samples from the cone (2 bombs and 1 spatter agglutinate) and five from lava flows were analyzed for major and trace elements through XRF and ICP techniques. These extrusive are calc-alkaline medium to high K[sub 2]O basaltic andesites; in particular, SiO[sub 2] ranges from 53 to 54 wt. %, K[sub 2]O from 1.39 to 1.94, MgO from 6.3 to 7.3, Ba from 774 to 1,069 ppm and Sr from 1,463 to 1,951 ppm. With increasing K[sub 2]O: P[sub 2]O[sub 5], Ba, Be, Ce, La, Sr, and Zr increase in concentration while Ni, Cr, and Co decrease. All major elements are virtually constant or scatter randomly; Y,V,Sc, and Yb follow the same pattern. The lower Al[sub 2]O[sub 3] content (16 to 17 wt.%) precludes the addition of a large plagioclase component as an explanation of the high Sr content. Batch partial melting of a mineralogically homogeneous source that has been fluxed by variable amounts of an LILE-rich fluid phase whose ultimate origin is tied to the subduction process, is a likely scheme which explains the unusual chemical composition of the Gossenest extrusive rocks.

  1. Low Na, High K Diet and the Role of Aldosterone in BK-Mediated K Excretion

    PubMed Central

    Cornelius, Ryan J.; Wen, Donghai; Li, Huaqing; Yuan, Yang; Wang-France, Jun; Warner, Paige C.; Sansom, Steven C.

    2015-01-01

    A low Na, high K diet (LNaHK) is associated with a low rate of cardiovascular (CV) disease in many societies. Part of the benefit of LNaHK relies on its diuretic effects; however, the role of aldosterone (aldo) in the diuresis is not understood. LNaHK mice exhibit an increase in renal K secretion that is dependent on the large, Ca-activated K channel, (BK-α with accessory BK-β4; BK-α/β4). We hypothesized that aldo causes an osmotic diuresis by increasing BK-α/β4-mediated K secretion in LNaHK mice. We found that the plasma aldo concentration (P[aldo]) was elevated by 10-fold in LNaHK mice compared with control diet (Con) mice. We subjected LNaHK mice to either sham surgery (sham), adrenalectomy (ADX) with low aldo replacement (ADX-LA), or ADX with high aldo replacement (ADX-HA). Compared to sham, the urinary flow, K excretion rate, transtubular K gradient (TTKG), and BK-α and BK-β4 expressions, were decreased in ADX-LA, but not different in ADX-HA. BK-β4 knockout (β4KO) and WT mice exhibited similar K clearance and TTKG in the ADX-LA groups; however, in sham and ADX-HA, the K clearance and TTKG of β4KO were less than WT. In response to amiloride treatment, the osmolar clearance was increased in WT Con, decreased in WT LNaHK, and unchanged in β4KO LNaHK. These data show that the high P[aldo] of LNaHK mice is necessary to generate a high rate of BK-α/β4-mediated K secretion, which creates an osmotic diuresis that may contribute to a reduction in CV disease. PMID:25607984

  2. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    NASA Astrophysics Data System (ADS)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  3. Water-enhanced interdiffusion of major elements between natural shoshonite and high-K rhyolite melts

    NASA Astrophysics Data System (ADS)

    González-García, Diego; Behrens, Harald; Petrelli, Maurizio; Vetere, Francesco; Morgavi, Daniele; Zhang, Chao; Perugini, Diego

    2017-09-01

    The interdiffusion of six major elements (Si, Ti, Fe, Mg, Ca, K) between natural shoshonite and a high-K calc-alkaline rhyolite (Vulcano island, Aeolian archipelago, Italy) has been experimentally measured by the diffusion couple technique at 1200{\\deg}C, pressures from 50 to 500 MPa and water contents from 0.3 (nominally dry) to 2 wt%. The experiments were carried out in an internally heated pressure vessel, and major element profiles were later acquired by electron probe microanalysis. The concentration-distance profiles are evaluated using a concentration-dependent diffusivity approach. Effective binary diffusion coefficients for four intermediate silica contents are obtained by the Sauer-Freise modified Boltzmann-Matano method. At the experimental temperature and pressures, the diffusivity of all studied elements notably increases with dissolved H2O content. Particularly, diffusion is up to 1.4 orders of magnitude faster in a melt containing 2 wt.% H2O than in nominally dry melts. This effect is slightly enhanced in the more mafic compositions. Uphill diffusion was observed for Al, while all other elements can be described by the concept of effective binary interdiffusion. Ti is the slowest diffusing element through all experimental conditions and compositions, followed by Si. Fe, Mg, Ca and K diffuse at similar rates but always more rapidly than Si and Ti. This trend suggests a strong coupling between melt components. Since effects of composition (including water content) are dominant, a pressure effect on diffusion cannot be clearly resolved in the experimental pressure range.

  4. Solid-State Electrolyte-Gated Graphene in Optical Modulators.

    PubMed

    Rodriguez, Francisco J; Aznakayeva, Diana E; Marshall, Owen P; Kravets, Vasyl G; Grigorenko, Alexander N

    2017-05-01

    The gate-tunable wide-band absorption of graphene makes it suitable for light modulation from terahertz to visible light. The realization of graphene-based modulators, however, faces challenges connected with graphene's low absorption and the high electric fields necessary to change graphene's optical conductivity. Here, a solid-state supercapacitor effect with the high-k dielectric hafnium oxide is demonstrated that allows modulation from the near-infrared to shorter wavelengths close to the visible spectrum with remarkably low voltages (≈3 V). The electroabsorption modulators are based on a Fabry-Perot-resonator geometry that allows modulation depths over 30% for free-space beams. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Quantum gate-set tomography

    NASA Astrophysics Data System (ADS)

    Blume-Kohout, Robin

    2014-03-01

    Quantum information technology is built on (1) physical qubits and (2) precise, accurate quantum logic gates that transform their states. Developing quantum logic gates requires good characterization - both in the development phase, where we need to identify a device's flaws so as to fix them, and in the production phase, where we need to make sure that the device works within specs and predict residual error rates and types. This task falls to quantum state and process tomography. But until recently, protocols for tomography relied on a pre-existing and perfectly calibrated reference frame comprising the measurements (and, for process tomography, input states) used to characterize the device. In practice, these measurements are neither independent nor perfectly known - they are usually implemented via exactly the same gates that we are trying to characterize! In the past year, several partial solutions to this self-consistency problem have been proposed. I will present a framework (gate set tomography, or GST) that addresses and resolves this problem, by self-consistently characterizing an entire set of quantum logic gates on a black-box quantum device. In particular, it contains an explicit closed-form protocol for linear-inversion gate set tomography (LGST), which is immune to both calibration error and technical pathologies like local maxima of the likelihood (which plagued earlier methods). GST also demonstrates significant (multiple orders of magnitude) improvements in efficiency over standard tomography by using data derived from long sequences of gates (much like randomized benchmarking). GST has now been applied to qubit devices in multiple technologies. I will present and discuss results of GST experiments in technologies including a single trapped-ion qubit and a silicon quantum dot qubit. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U

  6. Threshold Voltage Engineering by Lanthanide Doping of the MOS Gate Stack

    SciTech Connect

    Fet, A.; Haeublein, V.; Ryssel, H.

    2008-11-03

    With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielectrics, respectively, in the MIS gate stack for the 45 nm technology node, higher than expected device threshold voltages have been observed due to the effect of Fermi-level pinning. While the debate as to the exact cause of Fermi-level pinning is ongoing, several attempts (capping layers, new gate metal compositions) have been made to curb this effect. In this paper, the tuning of metal gate work function by ion implantation is investigated as a tool for controlling the threshold voltage. Lanthanide incorporation is used to achieve a flat-band voltage shift of more than-1 V for n-MOS capacitors. It is shown that by adjusting dose and energy, the flat-band voltage shift can be tuned to a desired value, without substantial damage to the insulating quality of the gate. This translates to an effective shift in the threshold voltage.

  7. Single event gate rupture in thin gate oxides

    SciTech Connect

    Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.

    1997-06-01

    As integrated circuit densities increase with each new technology generation, both the lateral and vertical dimensions shrink. Operating voltages, however, have not scaled as aggressively as feature size, with a resultant increase in the electric fields within advanced geometry devices. Oxide electric fields are in fact increasing to greater than 5 MV/cm as feature size approaches 0.1 {micro}m. This trend raises the concern that single event gate rupture (SEGR) may limit the scaling of advanced integrated circuits (ICs) for space applications. The dependence of single event gate rupture (SEGR) critical field on oxide thickness is examined for thin gate oxides. Critical field for SEGR increases with decreasing oxide thickness, consistent with an increasing intrinsic breakdown field.

  8. Prospectively gated cardiac computed tomography.

    PubMed

    Moore, S C; Judy, P F; Garnic, J D; Kambic, G X; Bonk, F; Cochran, G; Margosian, P; McCroskey, W; Foote, F

    1983-01-01

    A fourth-generation scanner has been modified to perform prospectively gated cardiac computed tomography (CT). A computer program monitors the electrocardiogram (ECG) and predicts when to initiate the next scan in a gated series in order to acquire all projection data for a desired phase of the heart cycle. The system has been tested with dogs and has produced cross-sectional images of all phases of the cardiac cycle. Eight to ten scans per series were sufficient to obtain reproducible images of each transverse section in the end-diastolic and end-systolic phases. The radiation dose to the skin was approximately 1.4 cGy per scan. The prospectively gated system is more than twice as efficient as a retrospectively gated system in obtaining complete angular projection data for a 10% heart cycle window. A temporal smoothing technique to suppress reconstruction artifacts due to sorting inconsistent projection data was developed and evaluated. Image noise was reduced by averaging together any overlapping projection data. Prospectively gated cardiac CT has also been used to demonstrate that the error in attenuation measured with a single nongated CT scan through the heart can be as large as 50-60 CT numbers outside the heart in the lung field.

  9. Evolution of high-K arc magma, Egmont volcano, Taranaki, New Zealand: evidence from mineral chemistry

    NASA Astrophysics Data System (ADS)

    Stewart, R. B.; Price, R. C.; Smith, I. E. M.

    1996-12-01

    Magmas from Egmont volcano contain xenocrysts and glomerocrysts entrained from melt zones at or near the base of the crust. Lava whole- rock geochemistry therefore reflects mixing between these crystals and melt and no longer represents melt compositions. As an alternative to using whole-rock analyses, mineral chemistry is used to determine processes occurring during early stages of magma evolution. Primitive magmas at Egmont volcano were hydrous high-magnesian basalts with original ƒ O 2 2.5-3 log units above FMQ. By the time of eruption this had fallen to 0.8-1.0 log units above FMQ. Early fractionation of olivine (Fo 87) and chromite (Cr# 0.7-0.8 and Fe 3+ # 0.24-0.31), and later olivine + clinopyroxene + titanomagnetite drove the evolution of the magma to a high-alumina basalt composition. At the base of the crust these evolved magmas entered the amphibole stability field and reaction between both anhydrous mafic cumulates and wall rocks crystallised amphibole, buffering the melt composition to basaltic andesite. Tapping of these melts to higher levels took them out of the amphibole stability field, resulting in decompressive melting of amphibole phenocrysts and incongruent melting of amphibole in lower to mid-crustal wall rocks in contact with the melt. K 2O-rich liquids from incongruent melting were a major source of potassium in the Egmont high-K andesites. Some plagioclase fractionation occurred in higher-level magma chambers but melt segregation was also an important process. H 2O-saturated melts fractionated amphibole as the amphibole stability field was again intersected and these melts evolved along a calc-alkaline trend to dacite. In contrast drier melts did not fractionate amphibole and evolved only to andesites. As most of the K 2O present is in the groundmass of the lavas, that is, in the liquid phase, the melts formed by the highest degree of melt extraction are the most potassic and these are the melts which tend to evolve to dacite.

  10. Quantum gates by periodic driving

    PubMed Central

    Shi, Z. C.; Wang, W.; Yi, X. X.

    2016-01-01

    Topological quantum computation has been extensively studied in the past decades due to its robustness against decoherence. One way to realize the topological quantum computation is by adiabatic evolutions—it requires relatively long time to complete a gate, so the speed of quantum computation slows down. In this work, we present a method to realize single qubit quantum gates by periodic driving. Compared to adiabatic evolution, the single qubit gates can be realized at a fixed time much shorter than that by adiabatic evolution. The driving fields can be sinusoidal or square-well field. With the sinusoidal driving field, we derive an expression for the total operation time in the high-frequency limit, and an exact analytical expression for the evolution operator without any approximations is given for the square well driving. This study suggests that the period driving could provide us with a new direction in regulations of the operation time in topological quantum computation. PMID:26911900

  11. Ionic thermoelectric gating organic transistors

    NASA Astrophysics Data System (ADS)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (~100 μV K-1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (~10,000 μV K-1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins.

  12. Electrostatic Gating of Ultrathin Films

    NASA Astrophysics Data System (ADS)

    Goldman, A. M.

    2014-07-01

    Electrostatic gating of ultrathin films can be used to modify electronic and magnetic properties of materials by effecting controlled alterations of carrier concentration while, in principle, not changing the level of disorder. As such, electrostatic gating can facilitate the development of novel devices and can serve as a means of exploring the fundamental properties of materials in a manner far simpler than is possible with the conventional approach of chemical doping. The entire phase diagram of a compound can be traversed by changing the gate voltage. In this review, we survey results involving conventional field effect devices as well as more recent progress, which has involved structures that rely on electrochemical configurations such as electric double-layer transistors. We emphasize progress involving thin films of oxide materials such as high-temperature superconductors, magnetic oxides, and oxides that undergo metal-insulator transitions.

  13. Ionic thermoelectric gating organic transistors

    PubMed Central

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

  14. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    PubMed Central

    Ando, Takashi

    2012-01-01

    Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of high-κ gate dielectrics via higher-κ (>20) materials and interfacial layer (IL) scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm), but with effective workfunction (EWF) values suitable only for n-type field-effect-transistor (FET). Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL) is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime (<0.5 nm) will be the key technology to satisfy both performance and reliability requirements for future CMOS devices. PMID:28817058

  15. Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si0.7Ge0.3 Tri-Gate pMOSFETs

    NASA Astrophysics Data System (ADS)

    Laviéville, R.; Le Royer, C.; Barraud, S.; Ghibaudo, G.

    2017-05-01

    We performed low temperature characterization of hole mobility in SiGe Trigate nanowires (NW) with gate length scaled down to 10nm. Trigate NWs with high-k/metal gate stack were fabricated on SOI wafers using solely optical lithography to design the wires with width down to 15nm. Drain current measurements are conducted within a cryogenic probe station enabling study on a 80K-350K temperature range. From these measurements we extracted the temperature dependence of the low field mobility μ0 for a wide range of gate lengths and NW widths using the Y-function method in order to cancel the influence of the mobility attenuation factor due to series resistances. The impact of the temperature over the mobility can be used to identify the dominant scattering mechanism in the channel. Overall, we observed that hole transport is predominantly limited by the extra scattering due to neutral defects in all devices with a gate length under 40 nm. Source/Drain implantations trace the origins of these defects. Consequently, these particular process steps should gain special care in the design of further node generation as they critically hinder charge mobility at that scale.

  16. Localizing a gate in CFTR

    PubMed Central

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-01-01

    Experimental and computational studies have painted a picture of the chloride permeation pathway in cystic fibrosis transmembrane conductance regulator (CFTR) as a short narrow tunnel flanked by wider inner and outer vestibules. Although these studies also identified a number of transmembrane segments (TMs) as pore-lining, the exact location of CFTR’s gate(s) remains unknown. Here, using a channel-permeant probe, [Au(CN)2]−, we provide evidence that CFTR bears a gate that coincides with the predicted narrow section of the pore defined as residues 338–341 in TM6. Specifically, cysteines introduced cytoplasmic to the narrow region (i.e., positions 344 in TM6 and 1148 in TM12) can be modified by intracellular [Au(CN)2]− in both open and closed states, corroborating the conclusion that the internal vestibule does not harbor a gate. However, cysteines engineered to positions external to the presumed narrow region (e.g., 334, 335, and 337 in TM6) are all nonreactive toward cytoplasmic [Au(CN)2]− in the absence of ATP, whereas they can be better accessed by extracellular [Au(CN)2]− when the open probability is markedly reduced by introducing a second mutation, G1349D. As [Au(CN)2]− and chloride ions share the same permeation pathway, these results imply a gate is situated between amino acid residues 337 and 344 along TM6, encompassing the very segment that may also serve as the selectivity filter for CFTR. The unique position of a gate in the middle of the ion translocation pathway diverges from those seen in ATP-binding cassette (ABC) transporters and thus distinguishes CFTR from other members of the ABC transporter family. PMID:25675504

  17. Localizing a gate in CFTR.

    PubMed

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-02-24

    Experimental and computational studies have painted a picture of the chloride permeation pathway in cystic fibrosis transmembrane conductance regulator (CFTR) as a short narrow tunnel flanked by wider inner and outer vestibules. Although these studies also identified a number of transmembrane segments (TMs) as pore-lining, the exact location of CFTR's gate(s) remains unknown. Here, using a channel-permeant probe, [Au(CN)2](-), we provide evidence that CFTR bears a gate that coincides with the predicted narrow section of the pore defined as residues 338-341 in TM6. Specifically, cysteines introduced cytoplasmic to the narrow region (i.e., positions 344 in TM6 and 1148 in TM12) can be modified by intracellular [Au(CN)2](-) in both open and closed states, corroborating the conclusion that the internal vestibule does not harbor a gate. However, cysteines engineered to positions external to the presumed narrow region (e.g., 334, 335, and 337 in TM6) are all nonreactive toward cytoplasmic [Au(CN)2](-) in the absence of ATP, whereas they can be better accessed by extracellular [Au(CN)2](-) when the open probability is markedly reduced by introducing a second mutation, G1349D. As [Au(CN)2](-) and chloride ions share the same permeation pathway, these results imply a gate is situated between amino acid residues 337 and 344 along TM6, encompassing the very segment that may also serve as the selectivity filter for CFTR. The unique position of a gate in the middle of the ion translocation pathway diverges from those seen in ATP-binding cassette (ABC) transporters and thus distinguishes CFTR from other members of the ABC transporter family.

  18. High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

    NASA Astrophysics Data System (ADS)

    Shankar, Bhawani; Gupta, Sanjeev K.; Taube, William R.; Akhtar, J.

    2016-12-01

    This paper develops a deep insight into the behaviour of high-k dielectric-based field plate on Ni/4H-SiC Schottky diode. It tries to explain the mechanism by which high-k materials outperform silicon dioxide, when used under the field plate. Phenomena like modulation of field enhancement factor, reshaping of equipotential contours and expansion of depletion region while maintaining fixed depletion ratio (length/width = 2.3) helps to understand the electrical behaviour of high-k dielectric-based field plate. High-k materials relaxed the equipotential contours under the field plate edge which resulted in electric field reduction up to 88% and significant drop from 6.6 to 2.2 in field enhancement factor at device edges. The study considers the field plate of different dielectrics (SiO2, Si3N4, Al203, HfO2) and in each case, analytically explores the optimisation of field plate parameters (overlap length and dielectric thickness, dielectric constant). All the investigations have been done using numerical simulations on calibrated setup.

  19. Reading Gate Positions with a Smartphone

    NASA Astrophysics Data System (ADS)

    van Overloop, Peter-Jules; Hut, Rolf

    2015-04-01

    Worldwide many flow gates are built in water networks in order to direct water to appropriate locations. Most of these gates are adjusted manually by field operators of water management organizations and it is often centrally not known what the new position of the gate is. This makes centralized management of the entire water network difficult. One of the reasons why the measurement of the gate position is usually not executed, is that for certain gates it is not easy to do such a reading. Tilting weirs or radial gates are examples where operators need special equipment (measuring rod and long level) to determine the position and it could even be a risky procedure. Another issue is that once the measurement is done, the value is jotted down in a notebook and later, at the office, entered in a computer system. So the entire monitoring procedure is not real-time and prone to human errors. A new way of monitoring gate positions is introduced. It consists of a level that is attached to the gate and an app with which a picture can be taken from the level. Using dedicated pattern recognition algorithms, the gate position can be read by using the angle of the level versus reference points on the gate, the radius of that gate and the absolute level of the joint around which the gate turn. The method uses gps-localization of the smartphone to store the gate position in the right location in the central database.

  20. HELLS GATE ROADLESS AREA, ARIZONA.

    USGS Publications Warehouse

    Conway, Clay M.; McColly, Robert A.

    1984-01-01

    Although no mineral-resource potential was identified in the Hells Gate Roadless Area during mineral surveys, the area is largely underlain by a regionally extensive Proterozoic granite-rhyolite complex which is tin-bearing. The geologic setting precludes the occurrence of fossil fuel resources and no other energy resources were identified. The potential for tin and associated metals in the Hells Gate Roadless Area and the region cannot be fully evaluated at this point. The granophyre and the upper part of the granite pluton along the northwestern margin of the area should be explored.

  1. Gating mechanisms of voltage-gated proton channels.

    PubMed

    Okamura, Yasushi; Fujiwara, Yuichiro; Sakata, Souhei

    2015-01-01

    Hv1 is a voltage-gated proton-selective channel that plays critical parts in host defense, sperm motility, and cancer progression. Hv1 contains a conserved voltage-sensor domain (VSD) that is shared by a large family of voltage-gated ion channels, but it lacks a pore domain. Voltage sensitivity and proton conductivity are conferred by a unitary VSD that consists of four transmembrane helices. The architecture of Hv1 differs from that of cation channels that form a pore in the center among multiple subunits (as in most cation channels) or homologous repeats (as in voltage-gated sodium and calcium channels). Hv1 forms a dimer in which a cytoplasmic coiled coil underpins the two protomers and forms a single, long helix that is contiguous with S4, the transmembrane voltage-sensing segment. The closed-state structure of Hv1 was recently solved using X-ray crystallography. In this article, we discuss the gating mechanism of Hv1 and focus on cooperativity within dimers and their sensitivity to metal ions.

  2. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    PubMed

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  3. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

    PubMed Central

    Khan, Z. N.; Ahmed, S.; Ali, M.

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  4. Radial gate evaluation: Olympus Dam, Colorado

    SciTech Connect

    1997-06-01

    The report presents a structural analysis of the radial gates of Olympus Dam in eastern Colorado. Five 20-foot wide by 17-foot high radial gates are used to control flow through the spillway at Olympus Dam. The spillway gates were designed in 1947. The gate arm assemblies consist of two separate wide flange beams, with a single brace between the arms. The arms pivot about a 4.0-inch diameter pin and bronze graphite-insert bushing. The pin is cantilevered from the pier anchor girder. The radial gates are supported by a pin bearing on a pier anchor birder bolted to the end of the concrete pier. The gates are operated by two-part wire rope 15,000-pound capacity hoise. Stoplog slots upstream of the radial gates are provided in the concrete piers. Selected drawings of the gates and hoists are located in appendix A.

  5. Chirality dependence of nanoscale ferromagnetic NOT gates

    NASA Astrophysics Data System (ADS)

    Lewis, E. R.; Petit, D.; O'Brien, L.; Zeng, H. T.; Read, D. E.; Cowburn, R. P.

    2011-03-01

    The behavior of a transverse domain wall (DW) interacting with a ferromagnetic NOT gate is studied with specific emphasis on the role of the DW chirality (sense of rotation of magnetization crossing the DW). We examine both the effect of the incoming DW chirality on the operation of the NOT gate and the effect of the gate on the DW chirality. We find that the chirality of the incoming DW does not affect the range of fields over which the NOT gate operates correctly. The effect of the NOT gate on the DW chirality depends on the chirality of the incoming DW: when the DW is incident on the NOT gate with the wide side of the DW on the inside of the V-shape formed by the gate, the chirality is conserved, but when the DW is incident on the gate with its wide side on the outside of the V-shape, the chirality may reverse.

  6. Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k Bi55b3O15 hybrid dielectric for phototransistor.

    PubMed

    Chang, Seongpil; Chung, Myung-Ho; Kwon, Jae-Hong; Shin, Sang-Il; Oh, Tae-Yeon; Dong, Ki-Young; Lee, Seung-Jun; Cho, Kyung-Hoon; Nahm, Sahn; Ju, Byeong-Kwon

    2012-04-01

    This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (- -5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/V x s, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V(G) = 0 V under 100 mW/cm2 AM 1.5 illumination.

  7. High k dielectrics on silicon: Effects of processing on nanostructure and properties

    NASA Astrophysics Data System (ADS)

    Das, Anirban

    High permittivity hafnia, HfO2, and hafnium silicate, HfSiO 4, are the most promising candidates to replace oxide (SiOx) or oxynitride (SiOxNy) based gate dielectrics in future generation CMOS devices. In this thesis, the effects of processing (deposition techniques, post deposition annealing, nitridation) on nanostructure evolution (crystallization, phase segregation, interlayer growth), changes in nanochemistry (impurity content, interfacial reaction, interdiffusion, oxygen diffusion, paramagnetic charge centers) and properties (EOT, oxide charges) of atomic layer deposited (ALD) Hf-O/Hf-Si-O films on Si, with different interlayers (IL), were studied. A variety of analytical techniques including XRD, RBS, XPS, SIMS, AFM, HRTEM, STEM-EELS and EPR were used. In general, PEALD Hf-O films deposited using metal-organic precursors showed a higher C and H and lower Cl content compared to thermal ALD films using halide based precursors. Also, as-deposited ALD films (Hf-O/IL/Si) showed the formation of Hf-O-Si bonds at the Hf-O/IL interface, with increasing tendency in the presence of a chemical oxide interlayer and upon oxygen annealing. Upon post deposition annealing (PDA) of ALD Hf-O films up to 1000°C, m-HfO2 was the stable crystalline phase. It was observed that the chemical oxide interlayer grew significantly during PDA in oxygen, the rate of which was a f (t, T) due to oxygen diffusion. Additionally, an annealed Hf-O stack (i.e., target Hf-O thickness of 4.0 nm/1.2 nm nitrided chemical oxide interlayer/Si) showed a chemically diffused HfSiOx region (2 nm) in between pure HfO2 (2 nm) and the interlayer (1.2 nm) as a result of interdiffusion and interfacial reactions. Therefore, a three-layer capacitor model was used to determine the respective contributions to the total EOT. Moreover, to correlate the presence of defects with density of interfacial states, as-deposited ALD Hf-O/chemical oxide IL/Si stacks were shown to be EPR active at 8K, due to Pb0, Pb1 type

  8. Gate-tunable electron interaction in high-κ dielectric films

    DOE PAGES

    Kondovych, Svitlana; Luk’yanchuk, Igor; Baturina, Tatyana I.; ...

    2017-02-20

    The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-k) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. Lastly, our findings open a unique laboratory for the in-depth study of topological phase transitions and a plethora of related phenomena, ranging from criticality ofmore » quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.« less

  9. Talking with Microsoft's Bill Gates.

    ERIC Educational Resources Information Center

    EDUCOM Review, 1994

    1994-01-01

    Presents the transcript of an interview with William Gates, chairman of Microsoft Corporation. Topics discussed include continued support from the information technology industry for higher education; experiences with recent college graduates in the industry; new technologies developing in the near future; alliances in the computer industry; and…

  10. Double-disc gate valve

    DOEpatents

    Wheatley, Seth J.

    1979-01-01

    This invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewtih, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separtion of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve.

  11. Developing ICALL Tools Using GATE

    ERIC Educational Resources Information Center

    Wood, Peter

    2008-01-01

    This article discusses the use of the General Architecture for Text Engineering (GATE) as a tool for the development of ICALL and NLP applications. It outlines a paradigm shift in software development, which is mainly influenced by projects such as the Free Software Foundation. It looks at standards that have been proposed to facilitate the…

  12. Bill Gates eyes healthcare market.

    PubMed

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  13. Developing ICALL Tools Using GATE

    ERIC Educational Resources Information Center

    Wood, Peter

    2008-01-01

    This article discusses the use of the General Architecture for Text Engineering (GATE) as a tool for the development of ICALL and NLP applications. It outlines a paradigm shift in software development, which is mainly influenced by projects such as the Free Software Foundation. It looks at standards that have been proposed to facilitate the…

  14. GATED PORES IN THE FERRITIN PROTEIN NANOCAGE

    PubMed Central

    Theil, Elizabeth C.; Liu, Xiaofeng S.; Tosha, Takehiko

    2008-01-01

    Synopsis and pictogram: Gated pores in the ferritin family of protein nanocages, illustrated in the pictogram, control transfer of ferrous iron into and out of the cages by regulating contact between hydrated ferric oxide mineral inside the protein cage, and reductants such as FMNH2 on the outside. The structural and functional homology between the gated ion channel proteins in inaccessible membranes and gated ferritin pores in the stable, water soluble nanoprotein, make studies of ferritin pores models for gated pores in many ion channel proteins. Properties of ferritin gated pores, which control rates of FMNH2 reduction of ferric iron in hydrated oxide minerals inside the protein nanocage, are discussed in terms of the conserved pore gate residues (arginine 72-apspartate 122 and leucine 110-leucine 134), of pore sensitivity to heat at temperatures 30 °C below that of the nanocage itself, and of pore sensitivity to physiological changes in urea (1–10 mM). Conditions which alter ferritin pore structure/function in solution, coupled with the high evolutionary conservation of the pore gates, suggest the presence of molecular regulators in vivo that recognize the pore gates and hold them either closed or open, depending on biological iron need. The apparent homology between ferrous ion transport through gated pores in the ferritin nanocage and ion transport through gated pores in ion channel proteins embedded in cell membranes, make studies of water soluble ferritin and the pore gating folding/unfolding a useful model for other gated pores. PMID:19262678

  15. Impact of Asymmetric Dual-k Spacer in the Underlap Regions of Sub 20 nm NMOSFET with Gate Stack

    NASA Astrophysics Data System (ADS)

    Chakraborty, Shramana; Dasgupta, Arpan; Das, Rahul; Kundu, Atanu; Sarkar, Chandan K.

    2016-10-01

    This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of dual-k spacers at the different underlap regions. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's) but at the cost of low on current (ION) and increased channel resistance. The high-k spacers are used to counter this problem. The ION is improved but at the cost of highly enhanced parasitic capacitances. This paper explores the possibility of using asymmetric dual-k spacer at the source underlap side so as to counter the shortcomings of high-k spacers in highly scaled devices on the basis of analog parameters: ION, gm, gm/ID, and intrinsic gain, gmRo and RF performance in terms of parasitic gate capacitance (Cgs, Cgd and Cgg),gate to source/drain resistances (Rgs and Rgd), transport delay (τm), the unity current gain cut-off frequency (fT) and the maximum frequency of oscillation (fmax). A single stage amplifier performance is also analyzed where it has been seen that the asymmetric dual-k spacer at the source underlap side gives better performance as compared to the other devices under comparison.

  16. Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors

    NASA Astrophysics Data System (ADS)

    Lombardo, S.; Wu, E. Y.; Stathis, J. H.

    2017-08-01

    We report the data and a model showing that the energy loss experienced by the carriers flowing through breakdown spots is the primary cause of progressive breakdown spot growth. The experiments are performed in gate dielectrics of metal-oxide-semiconductor (MOS) devices subjected to accelerated high electric field constant voltage stress under inversion conditions. The model is analytical and contains few free parameters of clear physical meaning. This is compared to a large set of data on breakdown transients at various oxide thicknesses, stress voltages, and temperatures, both in cases of n-channel and p-channel transistors and polycrystalline Si/oxynitride/Si and metal gate/high k dielectric/Si gate stacks. The basic idea is that the breakdown transient is due to the growth of one or more filaments in the dielectric promoted by electromigration driven by the energy lost by the electrons traveling through the breakdown spots. Both cases of polycrystalline Si/oxynitride/Si and metal gate/high-k dielectric/Si MOS structures are investigated. The best fit values of the model to the data, reported and discussed in the paper, consistently describe a large set of data. The case of simultaneous growth of multiple progressive breakdown spots in the same device is also discussed in detail.

  17. Quantum Circuit Synthesis using a New Quantum Logic Gate Library of NCV Quantum Gates

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Chen, Sai; Song, Xiaoyu; Perkowski, Marek; Chen, Hanwu; Zhu, Wei

    2017-04-01

    Since Controlled-Square-Root-of-NOT (CV, CV‡) gates are not permutative quantum gates, many existing methods cannot effectively synthesize optimal 3-qubit circuits directly using the NOT, CNOT, Controlled-Square-Root-of-NOT quantum gate library (NCV), and the key of effective methods is the mapping of NCV gates to four-valued quantum gates. Firstly, we use NCV gates to create the new quantum logic gate library, which can be directly used to get the solutions with smaller quantum costs efficiently. Further, we present a novel generic method which quickly and directly constructs this new optimal quantum logic gate library using CNOT and Controlled-Square-Root-of-NOT gates. Finally, we present several encouraging experiments using these new permutative gates, and give a careful analysis of the method, which introduces a new idea to quantum circuit synthesis.

  18. Quantum Circuit Synthesis using a New Quantum Logic Gate Library of NCV Quantum Gates

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Chen, Sai; Song, Xiaoyu; Perkowski, Marek; Chen, Hanwu; Zhu, Wei

    2016-12-01

    Since Controlled-Square-Root-of-NOT (CV, CV‡) gates are not permutative quantum gates, many existing methods cannot effectively synthesize optimal 3-qubit circuits directly using the NOT, CNOT, Controlled-Square-Root-of-NOT quantum gate library (NCV), and the key of effective methods is the mapping of NCV gates to four-valued quantum gates. Firstly, we use NCV gates to create the new quantum logic gate library, which can be directly used to get the solutions with smaller quantum costs efficiently. Further, we present a novel generic method which quickly and directly constructs this new optimal quantum logic gate library using CNOT and Controlled-Square-Root-of-NOT gates. Finally, we present several encouraging experiments using these new permutative gates, and give a careful analysis of the method, which introduces a new idea to quantum circuit synthesis.

  19. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    SciTech Connect

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K.

    2014-02-24

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  20. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  1. Optimization of side gate length and side gate voltage for sub-100-nm double-gate MOSFET

    NASA Astrophysics Data System (ADS)

    Kim, Jae-hong; Kim, Geun-ho; Ko, Suk-woong; Jung, Hak-kee

    2002-11-01

    In this paper, we have investigated double gate (DG) MOSFET structure, which has main gate (MG) and two side gates (SG). We know that optimum side gate voltage for each side gate length is about 2V in the main gate 50nm. Also, we know that optimum side gate length for each main gate length is 70nm above. DG MOSFET shows a small threshold voltage (Vth) roll-off. From the I-V characteristics, we obtained IDsat=510μA/μm at VMG=VDS=1.5V and VSG=3.0V for DG MOSFET with the main gate length of 50nm and the side gate length of 70nm. The subthreshold slope is 86mV/decade, transconductance is 111μA/V and DIBL (Drain Induced Barrier Lowering) is 51.3mV. Then, we have investigated the advantage of this structure for the application to multi-input NAND gate logic. Also, we have presented that TCAD simulator is suitable for device simulation.

  2. Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

    PubMed

    Nketia-Yawson, Benjamin; Kang, Seok-Ju; Tabi, Grace Dansoa; Perinot, Andrea; Caironi, Mario; Facchetti, Antonio; Noh, Yong-Young

    2017-04-01

    A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm(2) V(-1) s(-1) for common polymer and other semiconductor families at VG ≤ 2 V owing to high areal capacitance (>4 µF cm(-2) ) from combined polarization of CF interface dipoles and electrical-double-layer formation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Environmental noise reduction for holonomic quantum gates

    SciTech Connect

    Parodi, Daniele; Zanghi, Nino; Sassetti, Maura; Solinas, Paolo

    2007-07-15

    We study the performance of holonomic quantum gates, driven by lasers, under the effect of a dissipative environment modeled as a thermal bath of oscillators. We show how to enhance the performance of the gates by a suitable choice of the loop in the manifold of the controllable parameters of the laser. For a simplified, albeit realistic model, we find the surprising result that for a long time evolution the performance of the gate (properly estimated in terms of average fidelity) increases. On the basis of this result, we compare holonomic gates with the so-called stimulated raman adiabatic passage (STIRAP) gates.

  4. RGB-NIR active gated imaging

    NASA Astrophysics Data System (ADS)

    Spooren, Nick; Geelen, Bert; Tack, Klaas; Lambrechts, Andy; Jayapala, Murali; Ginat, Ran; David, Yaara; Levi, Eyal; Grauer, Yoav

    2016-10-01

    This paper presents multispectral active gated imaging in relation to the transportation and security fields. Active gated imaging is based on a fast gated camera and pulsed illuminator, synchronized in the time domain to provide range based images. We have developed a multispectral pattern deposited on a gated CMOS Image Sensor (CIS) with a pulsed Near Infrared VCSEL module. This paper will cover the component-level description of the multispectral gated CIS including the camera and illuminator units. Furthermore, the design considerations and characterization results of the spectral filters are presented together with a newly developed image processing method.

  5. Attosecond Temporal Gating with Elliptically Polarized Light

    SciTech Connect

    Dudovich, N.; Smirnova, O.; Ivanov, M. Yu.; Villeneuve, D. M.; Corkum, P. B.; Levesque, J.; Zeidler, D.; Comtois, D.

    2006-12-22

    Temporal gating allows high accuracy time-resolved measurements of a broad range of ultrafast processes. By manipulating the interaction between an atom and an intense laser field, we extend gating into the nonlinear medium in which attosecond optical and electron pulses are generated. Our gate is an amplitude gate induced by ellipticity of the fundamental pulse. The gate modulates the spectrum of the high harmonic emission and we use the measured modulation to characterize the sub-laser-cycle dynamics of the recollision electron wave packet.

  6. Fast Gate: Subnanosecond Gate Detectors for Laser Radiography

    SciTech Connect

    Trebes, J.; Feit, M.; Hatchett, S.; Key, M.; Phillips, T.; Sefcik, J.; Snavely, R.; Weber, M.

    2000-02-25

    X-ray radiography is used as a principal diagnostic in a wide range of hydrodynamic tests relevant to the weapons program and also for basic materials and equation-of-state science studies. The quality of the x-ray radiograph can be significantly degraded by the scattering of x-rays within the object and by components of the test system itself. Elimination of these scattered x-rays from the recorded images can either substantially improve the image contrast and signal-to-noise or allow smaller, lower-cost x-ray sources to be used. The scattered x-rays could be minimized through the use of a much shorter-duration x-ray pulse and a fast, gated detector. The short duration x-ray pulse and the fast gated detector allow detection of only those x-rays which pass through the object being radiographed. X-rays which are the result of scattering have longer path lengths and take longer to reach the target. Most of these can be eliminated if the detector if gated off before they arrive at the detector. Until recently there were no sources of high energy x-rays (1-10 MeV) with short duration (sub 100 picosecond) pulses. Now the Petawatt Laser Facility (ref 1) at Lawrence Livermore National Laboratory has been able to produce 0.1 rads at 1 meter of MeV energy x-rays in 1-0 picoseconds. Efforts are underway to significantly increase this x-ray output. The combination of the existing short-duration, Petawatt-produced x-ray pulses and an x-ray detector with sub-100-ps gate times could eliminate most of the scattered x-rays from the radiograph image and allow highly improved radiography particularly for larger, high density test objects.

  7. Effect of caffeine on response of rabbit isolated corpus cavernosum to high K+ solution, noradrenaline and transmural electrical stimulation.

    PubMed

    Adebiyi, Adebowale; Adaikan, P Ganesan

    2004-01-01

    1. Caffeine has wide-ranging activities on smooth muscles, including contractile and relaxant effects. The aim of the present study was to examine the activity of caffeine on rabbit corpus cavernosum (RCC). 2. The effects of caffeine (0.5-4.0 mmol/L) on the response of RCC to high K+ solution, noradrenaline (NA) and transmural electrical stimulation (EFS) were studied in a tissue bath system. 3. Caffeine did not contract the RCC. However, 0.5-4.0 mmol/L caffeine caused concentration-dependent relaxation of tension development in high-K+ (120 mmol/L) solution in contrast with the solvent control. At 4.0 mmol/L caffeine, high-K+ solution-induced tone of the RCC was reduced by 73.4 +/- 7.3%. Caffeine (0.5-4.0 mmol/L) also concentration-dependently relaxed NA (12.5 micro mol/L)-induced tonic contraction of the RCC. At 4.0 mmol/L caffeine, NA-induced tone of the RCC was reduced by 41.1 +/- 7.0%. Incubation of RCC in 2.0 mmol/L caffeine for 30 min prior to EFS (1-40 Hz) caused a marked rightward shift in the frequency-response curve. 4. The results of the present study suggest that caffeine exhibits relaxant activity on rabbit cavernosal smooth muscle and the mechanism of this activity possibly involves inhibition of Ca2+ signalling.

  8. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  9. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

    PubMed Central

    Lanza, Mario

    2014-01-01

    Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. PMID:28788561

  10. Unifying Gate Synthesis and Magic State Distillation

    NASA Astrophysics Data System (ADS)

    Campbell, Earl T.; Howard, Mark

    2017-02-01

    The leading paradigm for performing a computation on quantum memories can be encapsulated as distill-then-synthesize. Initially, one performs several rounds of distillation to create high-fidelity magic states that provide one good T gate, an essential quantum logic gate. Subsequently, gate synthesis intersperses many T gates with Clifford gates to realize a desired circuit. We introduce a unified framework that implements one round of distillation and multiquibit gate synthesis in a single step. Typically, our method uses the same number of T gates as conventional synthesis but with the added benefit of quadratic error suppression. Because of this, one less round of magic state distillation needs to be performed, leading to significant resource savings.

  11. Quantum computing gates via optimal control

    NASA Astrophysics Data System (ADS)

    Atia, Yosi; Elias, Yuval; Mor, Tal; Weinstein, Yossi

    2014-10-01

    We demonstrate the use of optimal control to design two entropy-manipulating quantum gates which are more complex than the corresponding, commonly used, gates, such as CNOT and Toffoli (CCNOT): A two-qubit gate called polarization exchange (PE) and a three-qubit gate called polarization compression (COMP) were designed using GRAPE, an optimal control algorithm. Both gates were designed for a three-spin system. Our design provided efficient and robust nuclear magnetic resonance (NMR) radio frequency (RF) pulses for 13C2-trichloroethylene (TCE), our chosen three-spin system. We then experimentally applied these two quantum gates onto TCE at the NMR lab. Such design of these gates and others could be relevant for near-future applications of quantum computing devices.

  12. Impact of post metal annealing on gate work function engineering for advanced MOS applications

    SciTech Connect

    Kumar, S. Sachin Prasad, Amitesh; Sinha, Amrita; Raut, Pratikhya; Das, Palash; Mahato, S. S.; Mallik, S.

    2016-05-06

    Ultra thin HfO{sub 2} high-k gate dielectric has been deposited directly on strained Si{sub 0.81}Ge{sub 0.19} by Atomic Layer Deposition (ALD) technique. The influence of different types of metal gate electrodes (Al, Au, Pt) on electrical characteristics of Metal-Oxide-Semiconductor capacitors has been studied. Our results show that the electrical characteristics of MOS device are highly dependent on the gate electrodes used. The dependency of electrical characteristics on post metal annealing was studied in detail. The measured flat band (V{sub fb}) and hysteresis (ΔV{sub fb}) from high frequency C-V characteristics were used to study the pre-existing traps in the dielectric. Impact of PMA on interface state density (D{sub it}), border trap density (N{sub bt}) and oxide trap density (Q{sub f/q}) of high-k gate stack were also examined for all the devices. The N{sub bt} and frequency dispersion significantly reduces to ~2.77x1010 cm{sup −2} and ~11.34 % respectively in case of Al electrode with a Dit value of ~4x10{sup 12} eV{sup −1}cm{sup −2} after PMA (350°C) in N{sub 2}, suggesting an improvement in device performance while Pt electrode shows a much less value of ΔVfb (~0.02 V) and Dit (~3.44x10{sup 12} eV{sup −1}cm{sup −2}) after PMA.

  13. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    NASA Astrophysics Data System (ADS)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  14. Microscale Digital Vacuum Electronic Gates

    NASA Technical Reports Server (NTRS)

    Manohara, Harish (Inventor); Mojarradi, Mohammed M. (Inventor)

    2014-01-01

    Systems and methods in accordance with embodiments of the invention implement microscale digital vacuum electronic gates. In one embodiment, a microscale digital vacuum electronic gate includes: a microscale field emitter that can emit electrons and that is a microscale cathode; and a microscale anode; where the microscale field emitter and the microscale anode are disposed within at least a partial vacuum; where the microscale field emitter and the microscale anode are separated by a gap; and where the potential difference between the microscale field emitter and the microscale anode is controllable such that the flow of electrons between the microscale field emitter and the microscale anode is thereby controllable; where when the microscale anode receives a flow of electrons, a first logic state is defined; and where when the microscale anode does not receive a flow of electrons, a second logic state is defined.

  15. Voltage-Gated Hydrophobic Nanopores

    SciTech Connect

    Lavrik, Nickolay V

    2011-01-01

    Hydrophobicity is a fundamental property that is responsible for numerous physical and biophysical aspects of molecular interactions in water. Peculiar behavior is expected for water in the vicinity of hydrophobic structures, such as nanopores. Indeed, hydrophobic nanopores can be found in two distinct states, dry and wet, even though the latter is thermodynamically unstable. Transitions between these two states are kinetically hindered in long pores but can be much faster in shorter pores. As it is demonstrated for the first time in this paper, these transitions can be induced by applying a voltage across a membrane with a single hydrophobic nanopore. Such voltage-induced gating in single nanopores can be realized in a reversible manner through electrowetting of inner walls of the nanopores. The resulting I-V curves of such artificial hydrophobic nanopores mimic biological voltage-gated channels.

  16. Cyclic networks of quantum gates

    NASA Astrophysics Data System (ADS)

    Cabauy, Peter

    In this thesis we first give an introduction to the basic aspects of quantum computation followed by an analysis of networks of quantum logic gates where the qubit lines are loops (cyclic). Thus far, investigations into cyclic networks of quantum logic gates have not been examined (as far as we know) by the quantum information community. In our investigations of cyclic quantum networks we have studied simple, one and two qubit systems. The analysis includes: classifying networks into groups, the dynamics of the qubits in a cyclic quantum network, and the perturbation effects of an external qubit acting on a cyclic quantum network. The analysis will be followed by a discussion on quantum algorithms and quantum information processing with cyclic quantum networks, a novel implementation of a cyclic network quantum memory and a discussion of quantum sensors via cyclic quantum networks.

  17. Improved Flux-Gate Magnetometer

    NASA Technical Reports Server (NTRS)

    Garner, H. Douglas

    1987-01-01

    Simplified circuit drives heading indicator and senses magnetic field of Earth. Simple flux-gate magnetometer supplies digital readout of magnetic heading of vehicle, developed to drive heading indicator, or supply heading information to autopilot or to other navigational instruments. Important feature is core driven into saturation in one direction only by alternating drive voltage, which swings from zero to one polarity and back. Made in part of commercially available integrated circuits.

  18. Gated high speed optical detector

    NASA Technical Reports Server (NTRS)

    Green, S. I.; Carson, L. M.; Neal, G. W.

    1973-01-01

    The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

  19. Voltage-gated Proton Channels

    PubMed Central

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  20. Modes of glutamate receptor gating

    PubMed Central

    Popescu, Gabriela K

    2012-01-01

    Abstract The time course of excitatory synaptic currents, the major means of fast communication between neurons of the central nervous system, is encoded in the dynamic behaviour of post-synaptic glutamate-activated channels. First-pass attempts to explain the glutamate-elicited currents with mathematical models produced reaction mechanisms that included only the most basic functionally defined states: resting vs. liganded, closed vs. open, responsive vs. desensitized. In contrast, single-molecule observations afforded by the patch-clamp technique revealed an unanticipated kinetic multiplicity of transitions: from microseconds-lasting flickers to minutes-long modes. How these kinetically defined events impact the shape of the synaptic response, how they relate to rearrangements in receptor structure, and whether and how they are physiologically controlled represent currently active research directions. Modal gating, which refers to the slowest, least frequently observed ion-channel transitions, has been demonstrated for representatives of all ion channel families. However, reaction schemes have been largely confined to the short- and medium-range time scales. For glutamate receptors as well, modal gating has only recently come under rigorous scrutiny. This article reviews the evidence for modal gating of glutamate receptors and the still developing hypotheses about the mechanism(s) by which modal shifts occur and the ways in which they may impact the time course of synaptic transmission. PMID:22106181

  1. Monolithic transistor gate energy recovery system

    NASA Technical Reports Server (NTRS)

    Rippel, Wally E. (Inventor)

    1989-01-01

    Energy is recovered from an insulated gate semiconductor switch, such as a MOSFET, that is otherwise lost in the gate capacitance by producing a notch in the gate control voltage for an interval B following an interval A after initial application of a gate control voltage pulse for turning the switch on, and a notch for an interval C following termination of the gate control voltage pulse followed by interval D during which the switch is turned on again, where each interval is a period .DELTA.T given by ##EQU1## L.sub.s is the inductance (discrete and/or parasitic) in series with the gate electrode of the insulated gate semiconductor switch, and C.sub.in is the capacitance of that switch between its gate and source electrodes. The interval .DELTA.T may be provided directly by timing in a pulse forming circuit for the gate control voltage applied, or adaptively by sensing the gate voltage v.sub.g and comparing it with fixed progressively higher voltages v.sub.1, v.sub.2 and v.sub.3, where v.sub.2 is intermediate v.sub.1 and v.sub.3 which correspond to the lower and upper levels of v.sub.g as the switch is turned off and on.

  2. Efficient Z gates for quantum computing

    NASA Astrophysics Data System (ADS)

    McKay, David C.; Wood, Christopher J.; Sheldon, Sarah; Chow, Jerry M.; Gambetta, Jay M.

    2017-08-01

    For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z gates, which, combined with two Xπ /2 gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse-shaping techniques such as derivative removal by adiabatic gate (DRAG). We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z gates to correct rotation errors realizes a 13.3 ns Xπ /2 gate characterized by low error [1.95 (3 ) ×10-4] and low leakage [3.1 (6 ) ×10-6] . Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders of magnitude smaller than pulse errors due to decoherence.

  3. Gating of two pore domain potassium channels

    PubMed Central

    Mathie, Alistair; Al-Moubarak, Ehab; Veale, Emma L

    2010-01-01

    Two-pore-domain potassium (K2P) channels are responsible for background leak currents which regulate the membrane potential and excitability of many cell types. Their activity is modulated by a variety of chemical and physical stimuli which act to increase or decrease the open probability of individual K2P channels. Crystallographic data and homology modelling suggest that all K+ channels possess a highly conserved structure for ion selectivity and gating mechanisms. Like other K+ channels, K2P channels are thought to have two primary conserved gating mechanisms: an inactivation (or C-type) gate at the selectivity filter close to the extracellular side of the channel and an activation gate at the intracellular entrance to the channel involving key, identified, hinge glycine residues. Zinc and hydrogen ions regulate Drosophila KCNK0 and mammalian TASK channels, respectively, by interacting with the inactivation gate of these channels. In contrast, the voltage dependence of TASK3 channels is mediated through its activation gate. For KCNK0 it has been shown that the gates display positive cooperativity. It is of much interest to determine whether other K2P regulatory compounds interact with either the activation gate or the inactivation gate to alter channel activity or, indeed, whether additional regulatory gating pathways exist. PMID:20566661

  4. Gating of two pore domain potassium channels.

    PubMed

    Mathie, Alistair; Al-Moubarak, Ehab; Veale, Emma L

    2010-09-01

    Two-pore-domain potassium (K2P) channels are responsible for background leak currents which regulate the membrane potential and excitability of many cell types. Their activity is modulated by a variety of chemical and physical stimuli which act to increase or decrease the open probability of individual K2P channels. Crystallographic data and homology modelling suggest that all K(+) channels possess a highly conserved structure for ion selectivity and gating mechanisms. Like other K(+) channels, K2P channels are thought to have two primary conserved gating mechanisms: an inactivation (or C-type) gate at the selectivity filter close to the extracellular side of the channel and an activation gate at the intracellular entrance to the channel involving key, identified, hinge glycine residues. Zinc and hydrogen ions regulate Drosophila KCNK0 and mammalian TASK channels, respectively, by interacting with the inactivation gate of these channels. In contrast, the voltage dependence of TASK3 channels is mediated through its activation gate. For KCNK0 it has been shown that the gates display positive cooperativity. It is of much interest to determine whether other K2P regulatory compounds interact with either the activation gate or the inactivation gate to alter channel activity or, indeed, whether additional regulatory gating pathways exist.

  5. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2016-09-01

    A band configuration of a high-k ZrO2/Al2O3 bilayer on hydrogenated diamond (H-diamond), a breakdown field (EB) of the ZrO2/Al2O3 bilayer, and an effect of gate-drain distance (dG-D) on electrical properties of ZrO2/Al2O3/H-diamond metal-insulator-semiconductor field-effect transistors (MISFETs) have been investigated. The Al2O3 and ZrO2 layers are successively deposited on H-diamond by atomic layer deposition (ALD) and sputtering-deposition (SD) techniques, respectively. The thin ALD-Al2O3 buffer layer with 4.0 nm thickness plays a role in protecting the H-diamond surface from being damaged by the plasma discharge during SD-ZrO2 deposition. The ZrO2/Al2O3 heterojunction has a type I band structure with valence and conduction band offsets of 0.6 ± 0.2 and 1.0 ± 0.2 eV, respectively. The valence band offset between ZrO2 and H-diamond is deduced to be 2.3 ± 0.2 eV. The EB of the ZrO2/Al2O3 bilayer is measured to be 5.2 MV cm-1, which is larger than that of the single ZrO2 layer due to the existence of the ALD-Al2O3 buffer layer. The dependence of dG-D on drain-source current maximum (IDS,max), on-resistance (RON), threshold voltage (VTH), and extrinsic transconductance maximum (gm,max) of the MISFETs has been investigated. With increasing dG-D from 4 to 18 μm, the absolute IDS,max decreases from 72.7 to 40.1 mA mm-1, and the RON increases linearly from 83.3 ± 5 to 158.7 ± 5 Ω mm. Variation of VTH values of around 1.0 V is observed, and the gm,max is in the range between 8.0 ± 0.1 and 13.1 ± 0.1 mS mm-1.

  6. Hafnium zirconate gate dielectric for advanced gate stack applications

    NASA Astrophysics Data System (ADS)

    Hegde, R. I.; Triyoso, D. H.; Samavedam, S. B.; White, B. E.

    2007-04-01

    We report on the development of a hafnium zirconate (HfZrO4) alloy gate dielectric for advanced gate stack applications. The HfZrO4 and hafnium dioxide (HfO2) films were formed by atomic layer deposition using metal halides and heavy water as precursors. The HfZrO4 material properties were examined and compared with those of HfO2 by a wide variety of analytical methods. The dielectric properties, device performance, and reliability of HfZrO4 were investigated by fabricating HfZrO4/tantalum carbide (TaxCy) metal-oxide-semiconductor field effect transistor. The HfZrO4 dielectric film has smaller band gap, smaller and more uniform grains, less charge traps, and more uniform film quality than HfO2. The HfZrO4 dielectric films exhibited good thermal stability with silicon. Compared to HfO2, the HfZrO4 gate dielectric showed lower capacitance equivalent thickness value, higher transconductance, less charge trapping, higher drive current, lower threshold voltage (Vt), reduced capacitance-voltage (C-V ) hysteresis, lower interface state density, superior wafer level thickness uniformity, and longer positive bias temperature instability lifetime. Incorporation of zirconium dioxide (ZrO2) into HfO2 enhances the dielectric constant (k ) of the resulting HfZrO4 which is associated with structural phase transformation from mainly monoclinic to tetragonal. The tetragonal phase increases the k value of HfZrO4 dielectric to a large value as predicted. The improved device characteristics are attributed to less oxygen vacancy in the fine grained microstructure of HfZrO4 films.

  7. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung; Liu, Han-Yin; Ho, Chiu-Sheng

    2013-07-01

    This paper reports Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al2O3/HfO2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al2O3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain-source current (IDS, max), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate-drain breakdown/turn-on voltages (BVGD/VON), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al2O3/(HfO2) dielectric layer of the same physical thickness.

  8. Reversible logic gate using adiabatic superconducting devices

    PubMed Central

    Takeuchi, N.; Yamanashi, Y.; Yoshikawa, N.

    2014-01-01

    Reversible computing has been studied since Rolf Landauer advanced the argument that has come to be known as Landauer's principle. This principle states that there is no minimum energy dissipation for logic operations in reversible computing, because it is not accompanied by reductions in information entropy. However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices. Another difficulty is that reversible logic gates must be both logically and physically reversible. Here we propose the first practical reversible logic gate using adiabatic superconducting devices and experimentally demonstrate the logical and physical reversibility of the gate. Additionally, we estimate the energy dissipation of the gate, and discuss the minimum energy dissipation required for reversible logic operations. It is expected that the results of this study will enable reversible computing to move from the theoretical stage into practical usage. PMID:25220698

  9. Reversible logic gate using adiabatic superconducting devices

    NASA Astrophysics Data System (ADS)

    Takeuchi, N.; Yamanashi, Y.; Yoshikawa, N.

    2014-09-01

    Reversible computing has been studied since Rolf Landauer advanced the argument that has come to be known as Landauer's principle. This principle states that there is no minimum energy dissipation for logic operations in reversible computing, because it is not accompanied by reductions in information entropy. However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices. Another difficulty is that reversible logic gates must be both logically and physically reversible. Here we propose the first practical reversible logic gate using adiabatic superconducting devices and experimentally demonstrate the logical and physical reversibility of the gate. Additionally, we estimate the energy dissipation of the gate, and discuss the minimum energy dissipation required for reversible logic operations. It is expected that the results of this study will enable reversible computing to move from the theoretical stage into practical usage.

  10. Reversible logic gate using adiabatic superconducting devices.

    PubMed

    Takeuchi, N; Yamanashi, Y; Yoshikawa, N

    2014-09-15

    Reversible computing has been studied since Rolf Landauer advanced the argument that has come to be known as Landauer's principle. This principle states that there is no minimum energy dissipation for logic operations in reversible computing, because it is not accompanied by reductions in information entropy. However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices. Another difficulty is that reversible logic gates must be both logically and physically reversible. Here we propose the first practical reversible logic gate using adiabatic superconducting devices and experimentally demonstrate the logical and physical reversibility of the gate. Additionally, we estimate the energy dissipation of the gate, and discuss the minimum energy dissipation required for reversible logic operations. It is expected that the results of this study will enable reversible computing to move from the theoretical stage into practical usage.

  11. A bistable electromagnetically actuated rotary gate microvalve

    NASA Astrophysics Data System (ADS)

    Luharuka, Rajesh; Hesketh, Peter J.

    2008-03-01

    Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor.

  12. Experimental superposition of orders of quantum gates

    PubMed Central

    Procopio, Lorenzo M.; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G.; Hamel, Deny R.; Rozema, Lee A.; Brukner, Časlav; Walther, Philip

    2015-01-01

    Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to ‘superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task—determining if two gates commute or anti-commute—with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer. PMID:26250107

  13. Experimental superposition of orders of quantum gates.

    PubMed

    Procopio, Lorenzo M; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G; Hamel, Deny R; Rozema, Lee A; Brukner, Časlav; Walther, Philip

    2015-08-07

    Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to 'superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task--determining if two gates commute or anti-commute--with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer.

  14. Contact gating at GHz frequency in graphene

    PubMed Central

    Wilmart, Q.; Inhofer, A.; Boukhicha, M.; Yang, W.; Rosticher, M.; Morfin, P.; Garroum, N.; Fève, G.; Berroir, J.-M.; Plaçais, B.

    2016-01-01

    The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates. PMID:26879709

  15. System and Method for Scan Range Gating

    NASA Technical Reports Server (NTRS)

    Zuk, David M. (Inventor); Lindemann, Scott (Inventor)

    2017-01-01

    A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

  16. Cognitive mechanisms associated with auditory sensory gating.

    PubMed

    Jones, L A; Hills, P J; Dick, K M; Jones, S P; Bright, P

    2016-02-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification.

  17. Contact gating at GHz frequency in graphene.

    PubMed

    Wilmart, Q; Inhofer, A; Boukhicha, M; Yang, W; Rosticher, M; Morfin, P; Garroum, N; Fève, G; Berroir, J-M; Plaçais, B

    2016-02-16

    The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.

  18. Cognitive mechanisms associated with auditory sensory gating

    PubMed Central

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  19. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    SciTech Connect

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  20. High Electron Mobility Ge n-Channel Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

    NASA Astrophysics Data System (ADS)

    Maeda, Tatsuro; Morita, Yukinori; Takagi, Shinichi

    2010-06-01

    We fabricate high-k/Ge n-channel metal-insulator-semiconductor field-effect transistors (MISFETs) by the gate-last process with the thermal solid source diffusion to achieve both of high quality source/drain (S/D) and gate stack. The n+/p junction formed by solid source diffusion technique of Sb dopant shows the excellent diode characteristics of ˜1.5×105 on/off ratio between +1 and -1 V and the quite low reverse current density of ˜4.1×10-4 A/cm2 at +1 V after the fabrication of high-k/Ge n-channel MISFETs that enable us to observe well-behaved transistor performances. The extracted electron mobility with the peak of 891 cm2/(V.s) is high enough to be superior to the Si universal electron mobility especially in low Eeff.

  1. Criteria for universality of quantum gates

    NASA Astrophysics Data System (ADS)

    Sawicki, Adam; Karnas, Katarzyna

    2017-06-01

    We consider the problem of deciding if a set of quantum one-qudit gates S ={U1,...,Un} is universal. We provide the compact-form criteria leading to a simple algorithm that allows deciding the universality of any given set of gates in a finite number of steps. Moreover, for a nonuniversal S our criteria indicate what types of gates can be added to S to turn it into a universal set.

  2. Floating gate transistors as biosensors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Frisbie, C. Daniel

    2016-11-01

    Electrolyte gated transistors (EGTs) are a sub-class of thin film transistors that are extremely promising for biological sensing applications. These devices employ a solid electrolyte as the gate insulator; the very large capacitance of the electrolyte results in low voltage operation and high transconductance or gain. This talk will describe the fabrication of floating gate EGTs and their use as ricin sensors. The critical performance metrics for EGTs compared with other types of TFTs will also be reviewed.

  3. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

  4. Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

    NASA Astrophysics Data System (ADS)

    Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

    2017-01-01

    Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

  5. Molecular beam epitaxy for advanced gate stack materials and processes

    NASA Astrophysics Data System (ADS)

    Locquet, Jean-Pierre

    2005-03-01

    The material requirements for future CMOS generations - as given by the ITRS roadmap - are very challenging. This includes a high K dielectric without a low K interfacial layer, a high mobility channel and the appropriate metal gate. With the help of two projects INVEST and ET4US, we are building up a molecular beam epitaxy (MBE) infrastructure to grow this material set on large area wafers that can be further processed into small scale devices. In the INVEST project, we have developed an MBE system for the growth of complex oxides on semiconductors. The system follows the overall design of a production tool and is equipped with an RF atomic oxygen source, effusion cells, e-beam evaporators and a differential pumping stage. The oxide growth process starts with desorbing the initial surface oxide on the Si wafers in ultra-high vacuum and high temperature to create a clean reconstructed 2x1 surface. Using the atomic oxygen it is possible to oxidize the surface in a well controlled manner at low temperature and to grow very thin and dense SiOx layers, followed by the growth of 2-6 nm amorphous high K dielectrics. The process parameters permit to tune the interface layer from a SiOx rich to a silicide rich interface with a significant impact on the capacitance and the leakage. Initial focus is on developing an optimized growth recipe for high quality amorphous HfO2 and LaHfO3.5 films. This recipe was subsequently used to make wafers for a transistor batch that gave us the first N short channel MBE MOSFET's (100 nm) using an etched gate process flow. Some highlights of the first batch for 3nm HfO2 MOSFET are a high mobility (> 270 cm^2/Vs) with a corresponding low leakage current of 2 mA/cm^2). While there were some process issues for LaHfO3.5, the 3 nm MOSFET showed very low leakage currents below 10-6 A/cm^2. Interestingly all the LaHFO3.5 MOSFETs showed very low threshold voltage instabilities. In collaboration with C. Marchiori, M. Sousa, A.Guiller, H. Siegwart, D

  6. Gate engineered performance of single molecular transistor

    NASA Astrophysics Data System (ADS)

    Ray, S. J.

    2016-05-01

    The operation, performance and electrostatics of multigated Single Molecular Transistor (SMT) devices are investigated using first-principles based density functional theory calculations for planar (pentacene) and non-planar (sucrose) molecules as islands. It has been found that the incorporation of larger numbers of gates allows enhanced electrostatic control in the SMT operation which has been quantified from the energy calculations and estimation of the gate capacitances. The effect of multiple gates is more dominant for a non-planar molecule than a planar molecule within an SMT which indicates the usefulness of such multi-gate architectures for future nanoelectronic devices.

  7. Realization of quantum gates by Lyapunov control

    NASA Astrophysics Data System (ADS)

    Hou, S. C.; Wang, L. C.; Yi, X. X.

    2014-02-01

    We propose a Lyapunov control design to achieve specific (or a family of) unitary time-evolution operators, i.e., quantum gates in the Schrödinger picture by tracking control. Two examples are presented. In the first, we illustrate how to realize the Hadamard gate in a single-qubit system, while in the second, the controlled-NOT (CNOT) gate is implemented in two-qubit systems with the Ising and Heisenberg interactions. Furthermore, we demonstrate that the control can drive the time-evolution operator into the local equivalence class of the CNOT gate and the operator keeps in this class forever with the existence of Ising coupling.

  8. Four Great Gates: Dilemmas, Directions and Distractions in Educational Research

    ERIC Educational Resources Information Center

    Delamont, Sara

    2005-01-01

    In James Elroy Flecker's poem "The Gates of Damascus", the poet imagines four exits from the safe comfortable city to the outside world. Each gate takes the traveller into a different set of temptations and dangers. The Aleppo Gate leads to trade and commerce, the Mecca Gate is for faith and pilgrimage, the Lebanon Gate is for exploration and the…

  9. Gating, enhanced gating, and beyond: information utilization strategies for motion management, applied to preclinical PET

    PubMed Central

    2013-01-01

    Background Respiratory gating and gate optimization strategies present solutions for overcoming image degradation caused by respiratory motion in PET and traditionally utilize hardware systems and/or employ complex processing algorithms. In this work, we aimed to advance recently emerging data-driven gating methods and introduce a new strategy for optimizing the four-dimensional data based on information contained in that data. These algorithms are combined to form an automated motion correction workflow. Methods Software-based gating methods were applied to a nonspecific population of 84 small-animal rat PET scans to create respiratory gated images. The gated PET images were then optimized using an algorithm we introduce as ‘gating+’ to reduce noise and optimize signal; the technique was also tested using simulations. Gating+ is based on a principle of only using gated information if and where it adds a net benefit, as evaluated in temporal frequency space. Motion-corrected images were assessed quantitatively and qualitatively. Results Of the small-animal PET scans, 71% exhibited quantifiable motion after software gating. The mean liver displacement was 3.25 mm for gated and 3.04 mm for gating+ images. The (relative) mean percent standard deviations measured in background ROIs were 1.53, 1.05, and 1.00 for the gated, gating+, and ungated values, respectively. Simulations confirmed that gating+ image voxels had a higher probability of being accurate relative to the corresponding ungated values under varying noise and motion scenarios. Additionally, we found motion mapping and phase decoupling models that readily extend from gating+ processing. Conclusions Raw PET data contain information about motion that is not currently utilized. In our work, we showed that through automated processing of standard (ungated) PET acquisitions, (motion-) information-rich images can be constructed with minimal risk of noise introduction. Such methods have the potential for

  10. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  11. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-21

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  12. Picosecond Optoelectronic AND-GATE

    DTIC Science & Technology

    1994-08-01

    SOTA. The bias, gate. and 13 ground probes make contact to their respective bond pads. Fig. 12 Temporal response of the SOTA. 14 Fig. 13 Sheet resistance for...post-annealed, lattice matched LT-GaAs, LT- 18 In0.35GaO. 65 As, LT-In0.53Ga0 .4 7As. The sheet resistance for polycrystalline LT-In0 .35Ga0...65As is also shown. The minimum acceptable values for sheet resistance for detector areas of 50x50 ptm 2 and 8x8 4tm 2 are shown and correspond to a dark

  13. Voltage-Gated Calcium Channels

    NASA Astrophysics Data System (ADS)

    Zamponi, Gerald Werner

    Voltage Gated Calcium Channels is the first comprehensive book in the calcium channel field, encompassing over thirty years of progress towards our understanding of calcium channel structure, function, regulation, physiology, pharmacology, and genetics. This book balances contributions from many of the leading authorities in the calcium channel field with fresh perspectives from risings stars in the area, taking into account the most recent literature and concepts. This is the only all-encompassing calcium channel book currently available, and is an essential resource for academic researchers at all levels in the areas neuroscience, biophysics, and cardiovascular sciences, as well as to researchers in the drug discovery area.

  14. TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs

    NASA Astrophysics Data System (ADS)

    Bera, M. K.; Mahata, C.; Chakraborty, A. K.; Nandi, S. K.; Tiwari, Jitendra N.; Hung, Jui-Yi; Maiti, C. K.

    2007-12-01

    In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. Titanium tetrakis iso- propoxide (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO2 films on p-Ge (1 0 0) at low temperature (<200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of ~65 Pa. The presence of an ultra-thin lossy GeO2 interfacial layer between the deposited high-k film and the substrate, results in frequency-dependent capacitance-voltage (C-V) characteristics in strong accumulation and a high interface state density (~1013 cm-2 eV-1). To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, thus forming TiO2/GeOxNy/Ge stacked-gate structure with improved interface/electrical properties. Different N sources, such as NO, NH3 and NO/NH3, have been used for nitrogen engineering. XPS and Raman spectroscopy analyses have been used for surface morphological study. Electrical properties, such as gate leakage current density, interface state density, charge trapping, flatband voltage shift, etc, have been studied in detail for TiO2/GeOxNy/Ge MIS capacitors using the current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and stress (both constant voltage and current) measurements. Although a significant improvement in electrical characteristics has been observed after nitridation in general, the formation of the interfacial GeOxNy layer, obtained from NO-plasma nitridation, is found to provide the maximum improvement among all the nitridation techniques used in this study. It is shown that the insertion of an ultra-thin oxynitride (GeOxNy) interfacial layer is advantageous for producing gate-quality TiO2 high-k dielectric stacks on Ge substrates.

  15. MIS and MFIS Devices: DyScO3 as a gate-oxide and buffer-layer

    NASA Astrophysics Data System (ADS)

    Melgarejo, R.; Karan, N. K.; Saavedra-Arias, J.; Pradhan, D. K.; Thomas, R.; Katiyar, R. S.

    2008-03-01

    Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure is of importance in nonvolatile memories, as insulating buffer layer that prevents interdiffusion between the ferroelectric (FE) and the Si substrate. However, insulating layer has some disadvantages viz. generation of depolarization field in FE film and increase of operation voltage. To overcome this, it is important to find a FE with low ɛr (compared to normal FE) and an insulating buffer layer with high ɛr (compared to ɛr = 3.9 of SiO2). High-k materials viz. LaAlO3, SiN, HfO2, HfAlO etc. have been studied as buffer layers in the MFIS structures and as gate-oxide in metal-insulator-silicon (MIS). Recently, a novel gate dielectric material, DyScO3 was considered and studies indicate that crystallization temperature significantly increased and the film on Si remained amorphous even at 1000 C annealing. Considering the requirements on crystallization temperature, ɛr, electrical stability for high-k buffer layers, DyScO3 seems to be very promising for future MFIS device applications. Therefore, the evaluations of MOCVD grown DyScO3 as gate-oxide for MIS and the buffer layers for Bi3.25La0.75Ti3O12 based MFIS structures are presented.

  16. Stimuli-responsive smart gating membranes.

    PubMed

    Liu, Zhuang; Wang, Wei; Xie, Rui; Ju, Xiao-Jie; Chu, Liang-Yin

    2016-02-07

    Membranes are playing paramount roles in the sustainable development of myriad fields such as energy, environmental and resource management, and human health. However, the unalterable pore size and surface properties of traditional porous membranes restrict their efficient applications. The performances of traditional membranes will be weakened upon unavoidable membrane fouling, and they cannot be applied to cases where self-regulated permeability and selectivity are required. Inspired by natural cell membranes with stimuli-responsive channels, artificial stimuli-responsive smart gating membranes are developed by chemically/physically incorporating stimuli-responsive materials as functional gates into traditional porous membranes, to provide advanced functions and enhanced performances for breaking the bottlenecks of traditional membrane technologies. Smart gating membranes, integrating the advantages of traditional porous membrane substrates and smart functional gates, can self-regulate their permeability and selectivity via the flexible adjustment of pore sizes and surface properties based on the "open/close" switch of the smart gates in response to environmental stimuli. This tutorial review summarizes the recent developments in stimuli-responsive smart gating membranes, including the design strategies and the fabrication strategies that are based on the introduction of the stimuli-responsive gates after or during membrane formation, and the positively and negatively responsive gating models of versatile stimuli-responsive smart gating membranes, as well as the advanced applications of smart gating membranes for regulating substance concentration in reactors, controlling the release rate of drugs, separating active molecules based on size or affinity, and the self-cleaning of membrane surfaces. With self-regulated membrane performances, smart gating membranes show great power for use in global sustainable development.

  17. Hydrophobic Gating in Ion Channels

    PubMed Central

    Aryal, Prafulla; Sansom, Mark S.P.; Tucker, Stephen J.

    2016-01-01

    Biological ion channels are nanoscale transmembrane pores. When water and ions are enclosed within the narrow confines of a sub-nanometer hydrophobic pore, they exhibit behavior not evident from macroscopic descriptions. At this nanoscopic level, the unfavorable interaction between the lining of a hydrophobic pore and water may lead to liquid-vapor oscillations. The resultant transient vapor state is ‘dewetted’ i.e. effectively devoid of water molecules within all, or part of the pore, thus leading to an energetic barrier to ion conduction. This process, termed ‘hydrophobic gating’, was first observed in molecular dynamics simulations of model nanopores, where the principles underlying hydrophobic gating (i.e. changes in diameter, polarity, or transmembrane voltage) have now been extensively validated. Computational, structural and functional studies now indicate that biological ion channels may also exploit hydrophobic gating to regulate ion flow within their pores. Here we review the evidence for this process, and propose that this unusual behavior of water represents an increasingly important element in understanding the relationship between ion channel structure and function. PMID:25106689

  18. 23. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. DETAIL VIEW OF SUBMERSIBLE TAINTER GATE, SHOWING TRUNNION PIN, GATE ARM AND GATE GAUGE, LOOKING SOUTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  19. 17. DETAIL VIEW OF TAINTER GATE, SHOWING SUBMERSIBLE (LEFT) AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF TAINTER GATE, SHOWING SUBMERSIBLE (LEFT) AND NONSUBMERSIBLE (RIGHT) GATES, PIERS AND DAM BRIDGE, WITH ROLLER GATE HEADHOUSE IN BACKGROUND, LOOKING NORTHEAST - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 10, Guttenberg, Clayton County, IA

  20. 2. DETAIL OF CONTROL GATE ADJACENT TO LIFT LOCK NO. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. DETAIL OF CONTROL GATE ADJACENT TO LIFT LOCK NO. 7; THIS CONTROL GATE IS A 1980s RECONSTRUCTION. - Illinois & Michigan Canal, Lift Lock No. 7 & Control Gate, East side of DuPage River, Channahon, Will County, IL

  1. 17. DETAIL VIEW OF ROLLER GATE (IN RAISED POSITION), SHOWING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. DETAIL VIEW OF ROLLER GATE (IN RAISED POSITION), SHOWING GATE FLANGES, GATE HEATER (LEFT FOREGROUND), ROLLER TRACK, CHAIN AND BRIDGE GIRDER, LOOKING EAST - Upper Mississippi River 9-Foot Channel Project, Lock & Dam No. 3, Red Wing, Goodhue County, MN

  2. Nanosecond gating properties of proximity focused microchannel plate image intensifiers

    NASA Astrophysics Data System (ADS)

    King, N. S. P.; King, N. S. P.; Yates, G. J.; Jaramillo, S. A.; Noel, B. W.; Detch, J. L., Jr.; Ogle, J. W.

    The optical gating properties of Multichannel plate image intensifiers were characterized. Emphasis was placed on parameters relevant to gating speed and correlations between the applied electrical and resultant optical gates.

  3. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    NASA Astrophysics Data System (ADS)

    Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

    2016-08-01

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  4. A gate drive circuit for gate-turn-off (GTO) devices in series stack.

    SciTech Connect

    Despe, O.

    1999-04-13

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements.

  5. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    SciTech Connect

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.; Xing, Huili Grace

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  6. Protected gates for topological quantum field theories

    NASA Astrophysics Data System (ADS)

    Beverland, Michael E.; Buerschaper, Oliver; Koenig, Robert; Pastawski, Fernando; Preskill, John; Sijher, Sumit

    2016-02-01

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  7. Channel gating pore: a new therapeutic target.

    PubMed

    Kornilov, Polina; Peretz, Asher; Attali, Bernard

    2013-09-01

    Each subunit of voltage-gated cation channels comprises a voltage-sensing domain and a pore region. In a paper recently published in Cell Research, Li et al. showed that the gating charge pathway of the voltage sensor of the KCNQ2 K+ channel can accommodate small opener molecules and offer a new target to treat hyperexcitability disorders.

  8. Quantum logic gates for superconducting resonator qudits

    SciTech Connect

    Strauch, Frederick W.

    2011-11-15

    We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

  9. Using Gates to Enhance Your Paddling Program.

    ERIC Educational Resources Information Center

    Kauffman, Robert B.; Mason, David W.

    1995-01-01

    Describes methods for constructing gates and slalom courses to teach paddling skills to young campers. Describes how the English Gate system, a standardized course, can be used both for instruction and to test camper's paddling skills. Recommends the use of a three-level award system (novice, intermediate, and expert) to recognize camper…

  10. Reconstruction of dynamic gated cardiac SPECT

    SciTech Connect

    Jin Mingwu; Yang Yongyi; King, Michael A.

    2006-11-15

    In this paper we propose an image reconstruction procedure which aims to unify gated single photon emission computed tomography (SPECT) and dynamic SPECT into a single method. We divide the cardiac cycle into a number of gate intervals as in gated SPECT, but treat the tracer distribution for each gate as a time-varying signal. By using both dynamic and motion-compensated temporal regularization, our reconstruction procedure will produce an image sequence that shows both cardiac motion and time-varying tracer distribution simultaneously. To demonstrate the proposed reconstruction method, we simulated gated cardiac perfusion imaging using the gated mathematical cardiac-torso (gMCAT) phantom with Tc99m-Teboroxime as the imaging agent. Our results show that the proposed method can produce more accurate reconstruction of gated dynamic images than independent reconstruction of individual gate frames with spatial smoothness alone. In particular, our results show that the former could improve the contrast to noise ratio of a simulated perfusion defect by as much as 100% when compared to the latter.

  11. Protected gates for topological quantum field theories

    SciTech Connect

    Beverland, Michael E.; Pastawski, Fernando; Preskill, John; Buerschaper, Oliver; Koenig, Robert; Sijher, Sumit

    2016-02-15

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  12. Retaining latch for a water pit gate

    DOEpatents

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  13. Retaining latch for a water pit gate

    SciTech Connect

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  14. Retaining latch for a water pit gate

    SciTech Connect

    Beale, A.R.

    1996-12-31

    The present invention relates to retaining devices which are used to latch two elements or parts together and, more particularly, to gate latches for use in locking a gate to a wall bracket in a water pit utilized to store or handle hazardous materials. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

  15. Retaining latch for a water pit gate

    SciTech Connect

    Beale, Arden R.

    1997-01-01

    A retaining latch for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

  16. Automatically closing swing gate closure assembly

    DOEpatents

    Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

    1988-01-01

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  17. Terahertz plasmon amplification in RTD-gated HEMTs with a grating-gate

    NASA Astrophysics Data System (ADS)

    Condori Quispe, Hugo O.; Encomendero, Jimy; Xing, Huili Grace; Sensale Rodriguez, Berardi

    2016-09-01

    We analyze amplification of terahertz plasmons in a grating-gate semiconductor hetero-structure. The device consists of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT), i.e. a HEMT structure with a double-barrier gate stack enabling resonant tunneling from gate to channel. In these devices, the key element enabling substantial power gain is the coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e. the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as in previous works, enabling amplification with associated power gain >> 30 dB at room temperature.

  18. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    PubMed

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  19. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  20. Logic gates based on ion transistors.

    PubMed

    Tybrandt, Klas; Forchheimer, Robert; Berggren, Magnus

    2012-05-29

    Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

  1. Glare suppression by coherence gated negation

    PubMed Central

    Zhou, Edward Haojiang; Shibukawa, Atsushi; Brake, Joshua; Ruan, Haowen; Yang, Changhuei

    2016-01-01

    Imaging of a weak target hidden behind a scattering medium can be significantly confounded by glare. We report a method, termed coherence gated negation (CGN), that uses destructive optical interference to suppress glare and allow improved imaging of a weak target. As a demonstration, we show that by permuting through a set range of amplitude and phase values for a reference beam interfering with the optical field from the glare and target reflection, we can suppress glare by an order of magnitude, even when the optical wavefront is highly disordered. This strategy significantly departs from conventional coherence gating methods in that CGN actively “gates out” the unwanted optical contributions while conventional methods “gate in” the target optical signal. We further show that the CGN method can outperform conventional coherence gating image quality in certain scenarios by more effectively rejecting unwanted optical contributions. PMID:28713849

  2. Distribution of anomalously high K2O volcanic rocks in Arizona: metasomatism at the Picacho Peak detachment fault.

    USGS Publications Warehouse

    Brooks, W.E.

    1986-01-01

    Metasomatized Tertiary lavas with anomalously high K2O and lower Na2O content are distributed within the NW-trending extensional terrain of SW Arizona. These rocks are common near core-complex-related detachment faults at Picacho Peak and the Harcuvar Mountains and in listric-faulted terrain at the Vulture Mountains. These rocks are also enriched in Zr but depleted in MgO. Fine-grained, euhedral orthoclase (adularia) is the dominant K-mineral; other secondary introduced minerals are quartz and calcite. Spatial association of metasomatism with the detachment faults suggests that detachment provided a conduit for hydrothermal fluids that altered the initial chemistry of the Tertiary volcanics and charged the upper plate rocks with mineralizing fluids that carried Zr and Ba, along with Au, Ag and Cu during detachment 17-18 m.y. ago.-L.C.H.

  3. Searching for high-k RE2O3 nanoparticles embedded in SiO2 glass matrix

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Lin, Y. H.; Kao, T. H.; Chou, C. C.; Yang, H. D.

    2012-03-01

    Significant experimental effort has been explored to search and characterize high-k materials with magnetodielectric effect (MDE) of series of rare earth (RE) oxide (RE2O3) nanoparticles (NPs) embedded in SiO2 glass matrix by a sol-gel route. Properly annealed sol-gel glass (in which RE = Sm, Gd, and Er) shows colossal response of dielectric constant along with diffuse phase transition and MDE around room temperature. The radial distribution functions, reconstructed from extended x-ray absorption fine structure, show the shortening of RE3 + -O depending on the RE2O3 NP size, which is consistent with oxygen vacancy induced dielectric anomaly. The magnetoresistive MDE is very much conditioned by magnetic property of RE2O3 NP grain, the degree of deformation of the lattice and constituent host.

  4. Connections between high-K and low-K states in the s-process nucleus {sup 176}Lu

    SciTech Connect

    Dracoulis, G. D.; Lane, G. J.; Byrne, A. P.; Kondev, F. G.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; Seweryniak, D.; Chowdhury, P.

    2010-01-15

    Gamma-ray branches that connect high-K states to low-K states in the s-process nucleus {sup 176}Lu were observed, thus providing a link between the 58 Gyr, 7{sup -} ground state and the 5.3 h, 1{sup -} isomeric state. High sensitivity and unambiguous placement were achieved through the study of the decay of the 58 {mu}s K{sup {pi}}=14{sup +} isomer using {gamma}-{gamma}-coincidence measurements. The large number of decay paths from the isomer provides a means of populating a broad selection of states from above, resulting, paradoxically, in higher sensitivity than in cases where low-spin input reactions are used. The out-of band decay widths important for excitation processes in stars are quantified.

  5. Characteristics of gated treatment using an optical surface imaging and gating system on an Elekta linac.

    PubMed

    Freislederer, Philipp; Reiner, Michael; Hoischen, Winfried; Quanz, Anton; Heinz, Christian; Walter, Franziska; Belka, Claus; Soehn, Matthias

    2015-03-19

    Knowing the technical characteristics of gated radiotherapy equipment is crucial for ensuring precise and accurate treatment when using techniques such as Deep-Inspiration Breath-Hold and gating under free breathing. With one of the first installations of the novel surface imaging system Catalyst™ (C-RAD AB, Sweden) in connection with an Elekta Synergy linear accelerator (Elekta AB, Sweden) via the Elekta Response Interface, characteristics like dose delivery accuracy and time delay were investigated prior to clinical implementation of gated treatments in our institution. In this study a moving phantom was used to simulate respiratory motion which was registered by the Catalyst™ system. The gating level was set manually. Within this gating window a trigger signal is automatically sent to the linac initiating treatment delivery. Dose measurements of gated linac treatment beams with different gating levels were recorded with a static 2D-Diode Array (MapCheck2, Sun Nuclear Co., USA) and compared to ungated reference measurements for different field sizes. In addition, the time delay of gated treatment beams was measured using radiographic film. The difference in dose delivery between gated and ungated treatment decreases with the size of the chosen gating level. For clinically relevant gating levels of about 30%, the differences in dose delivery accuracy remain below 1%. In comparison with other system configurations in literature, the beam-on time delay shows a large deviation of 851 ms ± 100 ms. When performing gated treatment, especially for free-breathing gating, factors as time delay and dose delivery have to be evaluated regularly in terms of a quality assurance process. Once these parameters are known they can be accounted and compensated for, e.g. by adjusting the pre-selected gating level or the internal target volume margins and by using prediction algorithms for breathing curves. The usage of prediction algorithms becomes inevitable with the high

  6. Net K(+) secretion in the thick ascending limb of mice on a low-Na, high-K diet.

    PubMed

    Wang, Bangchen; Wen, Donghai; Li, Huaqing; Wang-France, Jun; Sansom, Steven C

    2017-10-01

    Because of its cardio-protective effects, a low-Na, high-K diet (LNaHK) is often warranted in conjunction with diuretics to treat hypertensive patients. However, it is necessary to understand the renal handling of such diets in order to choose the best diuretic. Wild-type (WT) or Renal Outer Medullary K channel (ROMK) knockout mice (KO) were given a regular (CTRL), LNaHK, or high-K diet (HK) for 4-7 days. On LNaHK, mice treated with either IP furosemide for 12 hrs, or given furosemide in drinking water for 7 days, exhibited decreased K clearance. We used free-flow micropuncture to measure the [K(+)] in the early distal tubule (EDT [K(+)]) before and after furosemide treatment. Furosemide increased the EDT [K(+)] in WT on CTRL but decreased that in WT on LNaHK. Furosemide did not affect the EDT [K(+)] of KO on LNaHK or WT on HK. Furosemide-sensitive Na(+) excretion was significantly greater in mice on LNaHK than those on CTRL or HK. Patch clamp analysis of split-open TALs revealed that 70-pS ROMK exhibited a higher open probability (Po) but similar density in mice on LNaHK, compared with CTRL. No difference was found in the density or Po of the 30 pS K channels between the two groups. These results indicate mice on LNaHK exhibited furosemide-sensitive net K(+) secretion in the TAL that is dependent on increased NKCC2 activity and mediated by ROMK. We conclude that furosemide is a K-sparing diuretic by decreasing the TAL net K(+) secretion in subjects on LNaHK. Copyright © 2017 International Society of Nephrology. Published by Elsevier Inc. All rights reserved.

  7. KGS-HighK: A Fortran 90 program for simulation of hydraulic tests in highly permeable aquifers

    USGS Publications Warehouse

    Zhan, X.; Butler, J.J.

    2006-01-01

    Slug and pumping tests (hydraulic tests) are frequently used by hydrogeologists to obtain in-situ estimates of the transmissive and storage properties of a formation (Streltsova, 1988; Kruseman and de Ridder, 1990; Butler, 1998). In aquifers of high hydraulic conductivity, hydraulic tests are affected by mechanisms that are not considered in the analysis of tests in less permeable media (Bredehoeft et al., 1966). Inertia-induced oscillations in hydraulic head are the most common manifestation of such mechanisms. Over the last three decades, a number of analytical solutions that incorporate these mechanisms have been developed for the analysis of hydraulic tests in highly permeable aquifers (see Butler and Zhan (2004) for a review of this previous work). These solutions, however, are restricted to a subset of the conditions commonly encountered in the field. Recently, a more general solution has been developed that builds on this previous work to remove many of the limitations imposed by these earlier approaches (Butler and Zhan, 2004). The purpose of this note is to present a Fortran 90 program, KGS-HighK, for the evaluation of this new solution. This note begins with a brief overview of the conceptual model that motivated the development of the solution of Butler and Zhan (2004) for pumping- and slug-induced flow to/from a central well. The major steps in the derivation of that solution are described, but no details are given. Instead, a Mathematica notebook is provided for those interested in the derivation details. The key algorithms used in KGS-HighK are then described and the program structure is briefly outlined. A field example is provided to demonstrate program performance. The note concludes with a short summary section. ?? 2005 Elsevier Ltd. All rights reserved.

  8. Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-assembled Monolayers

    SciTech Connect

    Alaboson, Justice M. P.; Wang, Qing Hua; Emery, Jonathan D.; Lipson, Albert L.; Bedzyk, Michael J.; Elam, Jeffrey W.; Pellin, Michael J.; Hersam, Mark C.

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO₂ and Al₂O₃ on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al₂O₃ and 10 nm HfO₂ dielectric stack show high capacitance values of ~700 nF/cm² and low leakage currents of ~5 × 10{sup –9} A/cm² at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics.

  9. Gate-tunable electron interaction in high-κ dielectric films

    NASA Astrophysics Data System (ADS)

    Kondovych, Svitlana; Luk'Yanchuk, Igor; Baturina, Tatyana I.; Vinokur, Valerii M.

    2017-02-01

    The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.

  10. Gate-tunable electron interaction in high-κ dielectric films

    PubMed Central

    Kondovych, Svitlana; Luk’yanchuk, Igor; Baturina, Tatyana I.; Vinokur, Valerii M.

    2017-01-01

    The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices. PMID:28218245

  11. Gate Controlled Spin Precession Effect

    NASA Astrophysics Data System (ADS)

    Naser Zainuddin, Abu; Siddiqui, Lutfe; Hong, Seokmin; Datta, Supriyo

    2010-03-01

    A two-dimensional (2D) non-local lateral spin-transport model is developed based on the non-equilibrium Green's function (NEGF) formalism for ballistic carriers in mode space approach. The effect of gate controlled Rashba spin-orbit (RSO) interaction in modulating the non-local spin voltage has been explicitly taken into account. We found a quantitative agreement with the recent observation on non-local controlled spin-precession by Koo et. al [1]. The phase shift observed in the voltage according to the analytical equation used in [1] is found to be the consequence of both multichannel effect and the effect of injecting and detecting ferromagnetic contact length. In such structures we predict that a short length contact as well as an etched out channel can improve the non-local voltage significantly. [1] H. C. Koo et. al. Science, 325, 1515 (2009).

  12. Locking apparatus for gate valves

    DOEpatents

    Fabyan, J.; Williams, C.W.

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing further movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  13. Locking apparatus for gate valves

    DOEpatents

    Fabyan, Joseph; Williams, Carl W.

    1988-01-01

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  14. Voltage-gated sodium channels

    PubMed Central

    Abdelsayed, Mena; Sokolov, Stanislav

    2013-01-01

    Epilepsy is a brain disorder characterized by seizures and convulsions. The basis of epilepsy is an increase in neuronal excitability that, in some cases, may be caused by functional defects in neuronal voltage gated sodium channels, Nav1.1 and Nav1.2. The effects of antiepileptic drugs (AEDs) as effective therapies for epilepsy have been characterized by extensive research. Most of the classic AEDs targeting Nav share a common mechanism of action by stabilizing the channel’s fast-inactivated state. In contrast, novel AEDs, such as lacosamide, stabilize the slow-inactivated state in neuronal Nav1.1 and Nav1.7 isoforms. This paper reviews the different mechanisms by which this stabilization occurs to determine new methods for treatment. PMID:23531742

  15. Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

    NASA Astrophysics Data System (ADS)

    Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

    2017-07-01

    A high quality Al2O3 layer is developed to achieve high performance in top-gate MoS2 transistors. Compared with top-gate MoS2 field effect transistors on a SiO2 layer, the intrinsic mobility and subthreshold slope were greatly improved in high-k backside layer devices. A forming gas anneal is found to enhance device performance due to a reduction in the charge trap density of the backside dielectric. The major improvements in device performance are ascribed to the forming gas anneal and the high-k dielectric screening effect of the backside Al2O3 layer. Top-gate devices built upon these stacks exhibit a near-ideal subthreshold slope of ˜69 mV/dec and a high Y-Function extracted intrinsic carrier mobility (μo) of 145 cm2/V.s, indicating a positive influence on top-gate device performance even without any backside bias.

  16. Mechanosensitive gating of Kv channels.

    PubMed

    Morris, Catherine E; Prikryl, Emil A; Joós, Béla

    2015-01-01

    K-selective voltage-gated channels (Kv) are multi-conformation bilayer-embedded proteins whose mechanosensitive (MS) Popen(V) implies that at least one conformational transition requires the restructuring of the channel-bilayer interface. Unlike Morris and colleagues, who attributed MS-Kv responses to a cooperative V-dependent closed-closed expansion↔compaction transition near the open state, Mackinnon and colleagues invoke expansion during a V-independent closed↔open transition. With increasing membrane tension, they suggest, the closed↔open equilibrium constant, L, can increase >100-fold, thereby taking steady-state Popen from 0→1; "exquisite sensitivity to small…mechanical perturbations", they state, makes a Kv "as much a mechanosensitive…as…a voltage-dependent channel". Devised to explain successive gK(V) curves in excised patches where tension spontaneously increased until lysis, their L-based model falters in part because of an overlooked IK feature; with recovery from slow inactivation factored in, their g(V) datasets are fully explained by the earlier model (a MS V-dependent closed-closed transition, invariant L≥4). An L-based MS-Kv predicts neither known Kv time courses nor the distinctive MS responses of Kv-ILT. It predicts Kv densities (hence gating charge per V-sensor) several-fold different from established values. If opening depended on elevated tension (L-based model), standard gK(V) operation would be compromised by animal cells' membrane flaccidity. A MS V-dependent transition is, by contrast, unproblematic on all counts. Since these issues bear directly on recent findings that mechanically-modulated Kv channels subtly tune pain-related excitability in peripheral mechanoreceptor neurons we undertook excitability modeling (evoked action potentials). Kvs with MS V-dependent closed-closed transitions produce nuanced mechanically-modulated excitability whereas an L-based MS-Kv yields extreme, possibly excessive (physiologically

  17. On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

    NASA Astrophysics Data System (ADS)

    Vais, Abhitosh; Franco, Jacopo; Lin, Dennis; Putcha, Vamsi; Sioncke, Sonja; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin

    2017-04-01

    In this work, we study oxide defects in various III-V/high-k metal-oxide-semiconductor (MOS) stacks. We show that the choice of a given starting measurement voltage with respect to the MOS flat-band voltage affects the observed capacitance-voltage hysteresis. We discuss how this behavior can be used to study the distribution of oxide defect levels. With the help of comprehensive experimental data, we show that Al2O3 and HfO2 have different hysteresis characteristics related to different oxide defect distributions. In case of an Al2O3/HfO2 bilayer stack with Al2O3 on the channel side (interfacial layer, IL), as the IL thickness reduces from 3 nm to 0 nm, the hysteresis behavior switches from the typical Al2O3 behavior to the one corresponding to HfO2. We link the characteristic behavior of two dielectrics to the defect level distributions inside their respective band-gaps through a simple energy-driven charging model. Based on the experimental data and simulation results, we show that Al2O3, despite having a lower peak defect density as compared to HfO2, shows a very wide, almost continuous distribution of defect levels across and around the InGaAs channel energy band gap. These results explain the often reported poor reliability of III-V devices with Al2O3-based gate stacks.

  18. Oxygen migration in TiO{sub 2}-based higher-k gate stacks

    SciTech Connect

    Kim, Sang Bum; Brown, Stephen L.; Rossnagel, Stephen M.; Bruley, John; Copel, Matthew; Hopstaken, Marco J. P.; Narayanan, Vijay; Frank, Martin M.

    2010-03-15

    We report on the stability of high-permittivity (high-k) TiO{sub 2} films incorporated in metal-oxide-silicon capacitor structures with a TiN metal gate electrode, focusing on oxygen migration. Titanium oxide films are deposited by either Ti sputtering [physical vapor deposition (PVD)] followed by radical shower oxidation or by plasma-enhanced atomic layer deposition (PEALD) from titanium isopropoxide (Ti{l_brace}OCH(CH{sub 3}){sub 2{r_brace}4}) and O{sub 2} plasma. Both PVD and PEALD films result in near-stoichiometric TiO{sub 2} prior to high-temperature annealing. We find that dopant activation anneals of TiO{sub 2}-containing gate stacks at 1000 deg. C cause 5 A or more of additional SiO{sub 2} to be formed at the gate-dielectric/Si-channel interface. Furthermore, we demonstrate for the first time that oxygen released from TiO{sub 2} diffuses through the TiN gate electrode and oxidizes the poly-Si contact. The thickness of this upper SiO{sub 2} layer continues to increase with increasing TiO{sub 2} thickness, while the thickness of the regrown SiO{sub 2} at the gate-dielectric/Si interface saturates. The upper SiO{sub 2} layer degrades gate stack capacitance, and simultaneously the oxygen-deficient TiO{sub x} becomes a poor insulator. In an attempt to mitigate O loss from the TiO{sub 2}, top and bottom Al{sub 2}O{sub 3} layers are added to the TiO{sub 2} gate dielectric as oxygen barriers. However, they are found to be ineffective, due to Al{sub 2}O{sub 3}-TiO{sub 2} interdiffusion during activation annealing. Bottom HfO{sub 2}/Si{sub 3}N{sub 4} interlayers are found to serve as more effective oxygen barriers, reducing, though not preventing, oxygen downdiffusion.

  19. Range gating experiments through a scattering media

    SciTech Connect

    Payton, J.; Cverna, F.; Gallegos, R.; McDonald, T.; Numkena, D.; Obst, A.; Pena-Abeyta, C.; Yates, G.

    1998-12-31

    This paper discusses range-gated imaging experiments performed recently at Redstone Arsenal in Huntsville, Alabama. Range gating is an imaging technique that uses a pulsed laser and gated camera to image objects at specific ranges. The technique can be used for imaging through scattering media such as dense smoke or fog. Range gating uses the fact that light travels at 3 x 10{sup 8} m/s. Knowing the speed of light the authors can calculate the time it will take the laser light to travel a known distance, then gate open a Micro Channel Plate Image Intensifier (MCPII) at the time the reflected light returns from the target. In the Redstone experiment the gate width on the MCPII was set to equal the laser pulse width ({approximately} 8 ns) for the highest signal to noise ratio. The gate allows the light reflected form the target and a small portion of the light reflected from the smoke in the vicinity of the target to be imaged. They obtained good results in light and medium smoke but the laser they were used did not have sufficient intensity to penetrate the thickest smoke. They did not diverge the laser beam to cover the entire target in order to maintain a high flux that would achieve better penetration through the smoke. They were able to image an Armored Personnel Carrier (APC) through light and medium smoke but they were not able to image the APC through heavy smoke. The experiment and results are presented.

  20. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  1. Gated escaping of ligand out of protein

    NASA Astrophysics Data System (ADS)

    Sheu, Sheh-Yi; Yang, Dah-Yen

    2000-01-01

    We construct a new gating model and develop a new theory to study the escaping process of a ligand out of a spherical cavity with a puncture (or gate) on the surface. The gate undulation can be regulated by any time-dependent function and the motion of the ligand inside the spherical cavity is mapped into a two-dimensional entropy potential surface. Hence the driving force of our model is entropy only. For a static gate, the escaping process corresponds to climbing a two-dimensional entropy barrier. When the gate open angle is small, the escaping rate is proportional to the square of the opening angle. The prefactor of the escaping rate constant depends on the curvature of the entropy potential surface. For coherent gating, the survival time depends not only on the gate undulation frequency but also on how the initial state is defined. On the escaping from protein, our escaping rate shows it is qualitatively consistent with the experimental result of ligand recombination in myoglobin.

  2. Adaptive quantum gate-set tomography

    NASA Astrophysics Data System (ADS)

    Blume-Kohout, Robin

    2013-03-01

    Quantum information hardware needs to be characterized and calibrated. This is the job of quantum state and process tomography, but standard tomographic methods have an Achilles heel: to characterize an unknown process, they rely on a set of absolutely calibrated measurements. But many technologies (e.g., solid-state qubits) admit only a single native measurement basis, and other bases are measured using unitary control. So tomography becomes circular - tomographic protocols are using gates to calibrate themselves! Gate-set tomography confronts this problem head-on and resolves it by treating gates relationally. We abandon all assumptions about what a given gate operation does, and characterize entire universal gate sets from the ground up using only the observed statistics of an [unknown] 2-outcome measurement after various strings of [unknown] gate operations. The accuracy and reliability of the resulting estimate depends critically on which gate strings are used, and benefits greatly from adaptivity. Sandia National Labs is a multiprogram laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Dept. of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000

  3. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    SciTech Connect

    Ha, Tae-Jun

    2014-07-28

    This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  4. A quantum Fredkin gate (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-10-01

    One of the greatest challenges in modern science is the realisation of quantum computers which, as their scale increases, will allow enhanced performance of tasks across many areas of quantum information processing. Quantum logic gates play a vital role in realising these applications by carrying out the elementary operations on the qubits; a key aim is minimising the resources needed to build these gates into useful circuits. While the salient features of a quantum computer have been shown in proof-of-principle experiments, e.g., single- and two-qubit gates, difficulties in scaling quantum systems to encode and manipulate multiple qubits has hindered demonstrations of more complex operations. This is exemplified by the classical Fredkin (or controlled-SWAP) gate [1] for which, despite many theoretical proposals [2,3] relying on concatenating multiple two-qubit gates, a quantum analogue has yet to be realised. Here, by directly adding control to a two-qubit SWAP unitary [4], we use photonic qubit logic to report the first experimental demonstration of a quantum Fredkin gate [5]. Our scheme uses linear optics and improves on the overall probability of success by an order of magnitude over previous proposals [2,3]. This optical approach allows us to add control an arbitrary black-box unitary which is otherwise forbidden in the standard circuit model [6]. Additionally, the action of our gate exhibits quantum coherence allowing the generation of the highest fidelity three-photon GHZ states to date. The quantum Fredkin gate has many applications in quantum computing, quantum measurements [7] and cryptography [8,9]. Using our scheme, we apply the Fredkin gate to the task of direct measurements of the purity and state overlap of a quantum system [7] without recourse to quantum state tomography.

  5. GADL: A gate array description language

    NASA Astrophysics Data System (ADS)

    Lippens, P. E. R.; Slenter, A. G. J.

    1987-01-01

    A way to map digital networks onto gate array images is described. A language to describe gate array images, design rules for the wiring, and arbitrary specified macros from image dependent libraries is defined. A data base is generated by compiling the description of a gate array family in terms of the above items. Place and route software is automatically conditioned to implement arbitrary specifications of a digital system in terms of a netlist. The performance of the system is demonstrated for various practical situations.

  6. Hybrid benchmarking of arbitrary quantum gates

    NASA Astrophysics Data System (ADS)

    Chasseur, Tobias; Reich, Daniel M.; Koch, Christiane P.; Wilhelm, Frank K.

    2017-06-01

    We present a protocol for interleaved randomized benchmarking of arbitrary quantum gates using Monte Carlo sampling of quantum states. It is generally applicable, including non-Clifford gates while preserving key advantages of randomized benchmarking such as error amplification as well as independence from state preparation and measurement errors. This property is crucial for implementations in many contemporary systems. Although the protocol scales exponentially in the number of qubits, it is superior to direct Monte Carlo sampling of the average gate fidelity in both the total number of experiments by orders of magnitude and savings in classical preprocessing, that are exponential.

  7. The gating of the CFTR channel.

    PubMed

    Moran, Oscar

    2017-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR) is an anion channel expressed in the apical membrane of epithelia. Mutations in the CFTR gene are the cause of cystsic fibrosis. CFTR is the only ABC-protein that constitutes an ion channel pore forming subunit. CFTR gating is regulated in complex manner as phosphorylation is mandatory for channel activity and gating is directly regulated by binding of ATP to specific intracellular sites on the CFTR protein. This review covers our current understanding on the gating mechanism in CFTR and illustrates the relevance of alteration of these mechanisms in the onset of cystic fibrosis.

  8. Stay vane and wicket gate relationship study

    SciTech Connect

    None, None

    2005-01-19

    This report evaluates potential environmental and performance gains that can be achieved in a Kaplan turbine through non-structural modifications to stay vane and wicket gate assemblies. This summary is based primarily on data and conclusions drawn from models and studies of Lower Granite Dam. Based on this investigation, the study recommends (1) a proof of concept at Lower Granite Dam to establish predicted improvements for the existing turbine and to further refine the stay vane wicket gate designs for fish passage; and (2) consideration of the stay vane wicket gate systems in any future turbine rehabilitation studies.

  9. Diagonal gates in the Clifford hierarchy

    NASA Astrophysics Data System (ADS)

    Cui, Shawn X.; Gottesman, Daniel; Krishna, Anirudh

    2017-01-01

    The Clifford hierarchy is a set of gates that appears in the theory of fault-tolerant quantum computation, but its precise structure remains elusive. We give a complete characterization of the diagonal gates in the Clifford hierarchy for prime-dimensional qudits. They turn out to be pmth roots of unity raised to polynomial functions of the basis state to which they are applied, and we determine which level of the Clifford hierarchy a given gate sits in based on m and the degree of the polynomial.

  10. Gate-assisted turn-off thyristor

    NASA Technical Reports Server (NTRS)

    Lowry, L. R.; Page, D. J.; Schlegel, E. S.

    1978-01-01

    1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.

  11. Quantum gates and their coexisting geometric phases

    SciTech Connect

    Wu Lianao; Bishop, C. Allen; Byrd, Mark S.

    2011-08-15

    Geometric phases arise naturally in a variety of quantum systems with observable consequences. They also arise in quantum computations when dressed states are used in gating operations. Here we show how they arise in these gating operations and how one may take advantage of the dressed states producing them. Specifically, we show that for a given, but arbitrary Hamiltonian, and at an arbitrary time {tau}, there always exists a set of dressed states such that a given gate operation can be performed by the Hamiltonian up to a phase {phi}. The phase is a sum of a dynamical phase and a geometric phase. We illustrate the dressed phase for several systems.

  12. Comprehensive capacitance-voltage analysis including quantum effects for high-k interfaces on germanium and other alternative channel materials

    NASA Astrophysics Data System (ADS)

    Anwar, Sarkar R. M.

    High mobility alternative channel materials to silicon are critical to the continued scaling of metal oxide semiconductor (MOS) devices. However, before they can be incorporated into advanced devices, some major issues need to be solved. The high mobility materials suffer from lower allowable thermal budgets compared to Si (before desorption and defect formation becomes an issue) and the absence of a good quality native oxide has further increased the interest in the use of high-k dielectrics. However, the high interface state density and high electric fields at these semiconductor/high-k interfaces can significantly impact the capacitance-voltage (C-V) profile, and current C-V modeling software cannot account for these effects. This in turn affects the parameters extracted from the C-V data of the high mobility semiconductor/high-k interface, which are crucial to fully understand the interface properties and expedite process development. To address this issue, we developed a model which takes into account quantum corrections which can be applied to a number of these alternative channel materials including SixGe1-x, Ge, InGaAs, and GaAs. The C-V simulation using this QM correction model is orders of magnitude faster compared to a full band Schrodinger-Poisson solver. The simulated C-V is directly benchmarked to a self consistent Schrodinger-Poisson solution for each bulk semiconductor material, and from the benchmarking process the QM correction parameters are extracted. The full program, C-V Alternative Channel Extraction (CV ACE), incorporates a quantum mechanical correction model, along with the interface state density model, and can extract device parameters such as equivalent oxide thickness (EOT), doping density and flat band voltage (Vfb) as well as the interface state density profile using multiple measurements performed at different frequencies and temperatures, simultaneously. The program was used to analyze experimentally measured C-V profiles and the

  13. Cellular mechanisms involved in iso-osmotic high K+ solutions-induced contraction of the estrogen-primed rat myometrium.

    PubMed

    Trujillo, M M; Ausina, P; Savineau, J P; Marthan, R; Strippoli, G; Advenier, C; Pinto, F M; Candenas, M L

    2000-01-01

    The aim of the present study was to investigate the mechanisms involved in the contraction evoked by iso-osmotic high K+ solutions in the estrogen-primed rat uterus. In Ca2+-containing solution, iso-osmotic addition of KCl (30, 60 or 90 mM K+) induced a rapid, phasic contraction followed by a prolonged sustained plateau (tonic component) of smaller amplitude. The KCl (60 mM)-induced contraction was unaffected by tetrodotoxin (3 microM), omega-conotoxin MVIIC (1 microM), GF 109203X (1 microM) or calphostin C (3 microM) but was markedly reduced by tissue treatment with neomycin (1 mM), mepacrine (10 microM) or U-73122 (10 microM). Nifedipine (0.01-0.1 microM) was significantly more effective as an inhibitor of the tonic component than of the phasic component. After 60 min incubation in Ca2+-free solution containing 3 mM EGTA, iso-osmotic KCl did not cause any increase in tension but potentiated contractions evoked by oxytocin (1 microM), sodium orthovanadate (160 micrM) or okadaic acid (20 microM) in these experimental conditions. In freshly dispersed myometrial cells maintained in Ca2+-containing solution and loaded with indo 1, iso-osmotic KCl (60 mM) caused a biphasic increase in the intracellular Ca2+ concentration ([Ca2+]i). In cells superfused for 60 min in Ca2+-free solution containing EGTA (1 mM), KCl did not increase [Ca2+]i. In Ca2+-containing solution, KCl (60 mM) produced a 76.0 +/- 16.2% increase in total [3H]inositol phosphates above basal levels and increased the intracellular levels of free arachidonic acid. These results suggest that, in the estrogen-primed rat uterus, iso-osmotic high K+ solutions, in addition to their well known effect on Ca2+ influx, activate other cellular processes leading to an increase in the Ca2+ sensitivity of the contractile machinery by a mechanism independent of extracellular Ca2+.

  14. Inadequacy of high K+/nigericin for calibrating BCECF. II. Intracellular pH dependence of the correction.

    PubMed

    Boyarsky, G; Hanssen, C; Clyne, L A

    1996-10-01

    In the accompanying study [G. Boyarsky, C. Hanssen, and L.A. Clyne. Am. J. Physiol. 271 (Cell Physiol. 40): C1131-C1145, 1996], it was demonstrated that steady-state intracellular pH (pHi) determined using high K+/nigericin calibrations was systematically in error in vascular smooth muscle (VSM) cells by approximately 0.2 pH units. In this paper the possibility is explored that this correction (pHcor) to the nigericin-calibrated pHi (pHnig) might not be a constant but could vary as pHi varies. The range of pHi during exposures to "null solutions" designed to bracket pHi was extended to acidic and alkaline levels relative to the starting pHi in VSM cells. The pHcor necessary to correct pHnig was linearly dependent on pHnig, increasing from near zero at approximately 6.0 to approximately 0.2 at steady-state pHi, to approximately 0.3 at alkaline pHnig. It is shown how to retrieve previously acquired (tabulated) data using the linear relationship between pHcor and pHnig. Also examined were what corrections must be made to high K+/nigericin calibration curves to correct for this pHi-dependent pHcor. The following changes in the calibration parameters were found: the maximal fluorescence ratio increased from 16.75 to 17.28; the minimal fluorescence ratio decreased from 2.15 to 1.57; and the pK of 2',7'-bis (carboxy-ethyl)-5 (6)-carboxyfluorescein decreased from 7.13 to 6.93. Three potential explanations for these changes are discussed: external [K+] in the nigericin solutions could have been too low; internal [K+] changes during the calibration because of the finite buffering power of cells; and other acid-base transport/generation could have been contributing during the nigericin calibrations (i.e., nigericin does not overwhelm to insignificance other processes generating/consuming H+). The nonconstancy of pHcor is shown to have profound implications for measuring changes in pHi.

  15. The Pan-African high-K calc-alkaline peraluminous Elat granite from southern Israel: geology, geochemistry and petrogenesis

    NASA Astrophysics Data System (ADS)

    Eyal, M.; Litvinovsky, B. A.; Katzir, Y.; Zanvilevich, A. N.

    2004-10-01

    Calc-alkaline leucocratic granites that were emplaced at the late post-collision stage of the Pan-African orogeny are abundant in the northern half of the Arabian-Nubian Shield. Commonly, they are referred to as the Younger Granite II suite. In southern Israel such rocks are known as Elat granite. Studies of these rocks enable to recognize two types of granites: coarse-grained, massive Elat granite (EG), and fine- to medium-grained Shahmon gneissic granite (SGG). Both granite types are high-K and peraluminous ( ASI ranges from 1.03 to 1.16). They are similar in modal composition, mineral and whole-rock chemistry. Within the EG, a noticeable distinction in whole-rock chemistry and mineral composition is observed between rocks making up different plutons. In particular, the granite of Wadi Shelomo, as compared to the Rehavam pluton, is enriched in SiO 2, FeO∗, K 2O, Ba, Zr, Th, LREE and impoverished in MgO, Na 2O, Sr, and HREE. The Eu/Eu∗ values in the granite are low, up to 0.44. Mass-balance calculations suggest that chemical and mineralogical variations were caused by fractionation of ˜16 wt.% plagioclase from the parental Rehavam granite magma at temperature of 760-800 °C (muscovite-biotite geothermometer). The Rb-Sr isochrons yielded a date of 623 ± 24 Ma for the EG, although high value of age-error does not allow to constrain time of emplacement properly. The Rb-Sr date for SGG is 640 ± 9 Ma; however, it is likely that this date points to the time of metamorphism. A survey of the literature shows that peraluminous, high-K granites, similar to the EG, are abundant among the Younger Granite II plutons in the Sinai Peninsula and Eastern Desert, Egypt. They were emplaced at the end of the batholithic (late post-collision) stage. The most appropriate model for the generation of the peraluminous granitic magma is partial melting of metapelite and metagreywacke.

  16. Doppler backscattering for spherical tokamaks and measurement of high-k density fluctuation wavenumber spectrum in MAST

    NASA Astrophysics Data System (ADS)

    Hillesheim, J. C.; Crocker, N. A.; Peebles, W. A.; Meyer, H.; Meakins, A.; Field, A. R.; Dunai, D.; Carr, M.; Hawkes, N.; the MAST Team

    2015-07-01

    The high-k (7≲ {{k}\\bot}{ρi}≲ 11 ) wavenumber spectrum of density fluctuations has been measured for the first time in MAST (Lloyd et al 2003 Nucl. Fusion 43 1665). This was accomplished with the first implementation of Doppler backscattering (DBS) for core measurements in a spherical tokamak. DBS has become a well-established and versatile diagnostic technique for the measurement of intermediate- k ({{k}\\bot}{ρi}˜ 1 , and higher) density fluctuations and flows in magnetically confined fusion experiments. Previous implementations of DBS for core measurements have been in standard, large aspect ratio tokamaks. A novel implementation with two-dimensional (2D) steering was necessary to enable DBS measurements in MAST, where the large variation of the magnetic field pitch angle presents a challenge. We report on the scattering considerations and ray tracing calculations used to optimize the design and present data demonstrating measurement capabilities. Initial results confirm the applicability of the design and implementation approaches, showing the strong dependence of scattering alignment on the toroidal launch angle and demonstrating that DBS is sensitive to the local magnetic field pitch angle. We also present comparisons of DBS plasma velocity measurements with charge exchange recombination and beam emission spectroscopy measurements, which show reasonable agreement over most of the minor radius, but imply large poloidal flows approaching the magnetic axis in a discharge with an internal transport barrier. The 2D steering is shown to enable high-k measurements with DBS, at {{k}\\bot}>20 cm-1 ({{k}\\bot}{ρi}>10 ) for launch frequencies less than 75 GHz; this capability is used to measure the wavenumber spectrum of turbulence and we find \\mid n≤ft({{k}\\bot}\\right){{\\mid}2}\\propto k\\bot-4.7+/- 0.2 for {{k}\\bot}{ρi}≈ 7 -11, which is similar to the expectation for the turbulent kinetic cascade of \\mid n≤ft({{k}\\bot}\\right){{\\mid}2}\\propto

  17. Efficient Design of Exclusive-Or Gate using 5-Input Majority Gate in QCA

    NASA Astrophysics Data System (ADS)

    Jaiswal, Ramanand; Nath Sasamal, Trailokya

    2017-08-01

    Quantum dot cellular automata (QCA) is one of the emerging technology that has the capability of replacing the CMOS based technology at nano scale level. Majority gates and inverter are the principle elements in QCA to design any circuit. In this work, we propose a new 5-input majority gate. The new proposed gate reduces number of required cell, area and power consumption. The study of power dissipation is also explained using power estimator tool QCAPro. QCA designer 2.0.3 is used to validate the majority gate layout and their functionality. Furthermore, an XOR gate based on QCA are designed using proposed majority gate. Layout and simulation results show the improvement of proposed circuit over previous designed circuits.

  18. Gate assisted turn-off thyristor with cathode shunts and dynamic gate

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.; Page, D. J.

    1976-01-01

    A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

  19. Gate assisted turn-off thyristor with cathode shunts and dynamic gate

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.; Page, D. J.

    1976-01-01

    A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

  20. Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask

    NASA Astrophysics Data System (ADS)

    Yongliang, Li; Qiuxia, Xu

    2010-11-01

    The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon (a-Si) hardmask is presented. SC1 (NH4OH: H2O2: H2O), which can achieve reasonable etch rates for metal gates and very high selectivity to high-k dielectrics and hardmask materials, is chosen as the TaN etchant. Compared with the photoresist mask and the tetraethyl orthosilicate (TEOS) hardmask, the a-Si hardmask is a better choice to achieve selective removal of TaN on the HfSiON dielectric because it is impervious to the SC1 etchant and can be readily etched with NH4OH solution without attacking the TaN and the HfSiON film. In addition, the surface of the HfSiON dielectric is smooth after the wet etching of the TaN metal gate and a-Si hardmask removal, which could prevent device performance degradation. Therefore, the wet etching of TaN with the a-Si hardmask can be applied to dual metal gate integration for the selective removal of the first TaN metal gate deposition.

  1. Mechanosensitive Gating of Kv Channels

    PubMed Central

    Morris, Catherine E.; Prikryl, Emil A.; Joós, Béla

    2015-01-01

    K-selective voltage-gated channels (Kv) are multi-conformation bilayer-embedded proteins whose mechanosensitive (MS) Popen(V) implies that at least one conformational transition requires the restructuring of the channel-bilayer interface. Unlike Morris and colleagues, who attributed MS-Kv responses to a cooperative V-dependent closed-closed expansion↔compaction transition near the open state, Mackinnon and colleagues invoke expansion during a V-independent closed↔open transition. With increasing membrane tension, they suggest, the closed↔open equilibrium constant, L, can increase >100-fold, thereby taking steady-state Popen from 0→1; “exquisite sensitivity to small…mechanical perturbations”, they state, makes a Kv “as much a mechanosensitive…as…a voltage-dependent channel”. Devised to explain successive gK(V) curves in excised patches where tension spontaneously increased until lysis, their L-based model falters in part because of an overlooked IK feature; with recovery from slow inactivation factored in, their g(V) datasets are fully explained by the earlier model (a MS V-dependent closed-closed transition, invariant L≥4). An L-based MS-Kv predicts neither known Kv time courses nor the distinctive MS responses of Kv-ILT. It predicts Kv densities (hence gating charge per V-sensor) several-fold different from established values. If opening depended on elevated tension (L-based model), standard gK(V) operation would be compromised by animal cells’ membrane flaccidity. A MS V-dependent transition is, by contrast, unproblematic on all counts. Since these issues bear directly on recent findings that mechanically-modulated Kv channels subtly tune pain-related excitability in peripheral mechanoreceptor neurons we undertook excitability modeling (evoked action potentials). Kvs with MS V-dependent closed-closed transitions produce nuanced mechanically-modulated excitability whereas an L-based MS-Kv yields extreme, possibly excessive

  2. 7. DETAIL VIEW OF TAINTER GATE PIER AND NONSUBMERSIBLE TAINTER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. DETAIL VIEW OF TAINTER GATE PIER AND NON-SUBMERSIBLE TAINTER GATES DURING ERECTION, SHOWING LEFT GATE IN OPEN POSITION AND RIGHT GATE IN CLOSED POSITION, LOOKING NORTH (UPSTREAM). NOTE TEMPORARY SERVICE BRIDGE. - Upper Mississippi River 9-Foot Channel Project, Lock & Dam 26R, Alton, Madison County, IL

  3. Preliminary Investigation of High-K Materials -Tio2 Doped Ta2o5 Films by Remote Plasma Ald

    NASA Astrophysics Data System (ADS)

    Fang, Q.; Hodson, C.; Liu, M.; Fang, Z. W.; Potter, R.; Gunn, R.

    (TiO2)x(Ta2O5)1-x (x is up to 0.45) films deposited by a remote plasma atomic layer deposition (ALD) are reported in this work. The growth rates of the ALD films measured by ellipsometer are in a range of 0.8 - 1.06 Å/cycle at a deposition temperature of 300°C, depending on Ti/(Ti+Ta) ratio. In order to evaluate the high-k materials of Ti-doped Ta2O5 films, EDX and AES were used for determining the composition of the films. The thickness and optical properties of the films were measured by a spectral ellipsometer and CV-measurement was applied for testing the electrical property of the film. Furthermore, the effects of thermal annealing and in-situ O2-oxidation on thickness, refractive index and electrical property of (TiO2)x(Ta2O5)1-x films are also discussed.

  4. Geology and 40Ar/39Ar geochronology of the medium- to high-K Tanaga volcanic cluster, western Aleutians

    USGS Publications Warehouse

    Jicha, Brian R.; Coombs, Michelle L.; Calvert, Andrew T.; Singer, Brad S.

    2012-01-01

    We used geologic mapping and geochemical data augmented by 40Ar/39Ar dating to establish an eruptive chronology for the Tanaga volcanic cluster in the western Aleutian arc. The Tanaga volcanic cluster is unique in comparison to other central and western Aleutian volcanoes in that it consists of three closely spaced, active, volumetrically significant edifices (Sajaka, Tanaga, and Takawangha), the eruptive products of which have unusually high K2O contents. Thirty-five new 40Ar/39Ar ages obtained in two different laboratories constrain the duration of Pleistocene–Holocene subaerial volcanism to younger than 295 ka. The eruptive activity has been mostly continuous for the last 150 k.y., unlike most other well-characterized arc volcanoes, which tend to grow in discrete pulses. More than half of the analyzed Tanaga volcanic cluster lavas are basalts that have erupted throughout the lifetime of the cluster, although a considerable amount of basaltic andesite and basaltic trachyandesite has also been produced since 200 ka. Major- and trace-element variations suggest that magmas from Sajaka and Tanaga volcanoes are likely to have crystallized pyroxene and/or amphibole at greater depths than the older Takawangha magmas, which experienced a larger percentage of plagioclase-dominated fractionation at shallower depths. Magma output from Takawangha has declined over the last 86 k.y. At ca. 19 ka, the focus of magma flux shifted to the west beneath Tanaga and Sajaka volcanoes, where hotter, more mafic magma erupted.

  5. Polaron-electron assisted giant dielectric dispersion in SrZrO3 high-k dielectric

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Shukla, A. K.; Pulikkotil, J. J.; Kumar, Ashok

    2016-06-01

    The SrZrO3 is a well known high-k dielectric constant (˜22) and high optical bandgap (˜5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (Te) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O2- anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO6 octahedral angle in the temperature range of 650-750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  6. Assignment of the Perfluoropropionic Acid-Formic Acid Complex and the Difficulties of Including High K_a Transitions.

    NASA Astrophysics Data System (ADS)

    Obenchain, Daniel A.; Lin, Wei; Novick, Stewart E.; Cooke, S. A.

    2016-06-01

    We recently began an investigation into the perfluoropropionic acid\\cdotsformic acid complex using broadband microwave spectroscopy. This study aims to examine the possible double proton transfer between the two interacting carboxcyclic acid groups. The spectrum presented as a doubled set of lines, with spacing between transitions of < 1 MHz. Transitions appeared to be a-type, R branch transitions for an asymmetric top. Assignment of all K_a=1,0 transitions yields decent fits to a standard rotational Hamiltonian. Treatment of the doubling as either a two state system (presumably with a double proton transfer) or as two distinct, but nearly identical conformations of the complex produce fits of similar quality. Including higher K_a transitions for the a-type, R-branch lines greatly increases the error of these fits. A previous study involving the trifluoroacetic acid\\cdotsformic acid complex published observed similar high K_a transitions, but did not include them in the published fit. We hope to shed more light on this conundrum. Similarities to other double-well potential minimum systems will be discussed. Martinache, L.; Kresa, W.; Wegener, M.;, Vonmont, U.; and Bauder, A. Chem. Phys. 148 (1990) 129-140.

  7. Tb{sub 2}O{sub 3} thin films: An alternative candidate for high-k dielectric applications

    SciTech Connect

    Gray, Nathan W.; Prestgard, Megan C.; Tiwari, Ashutosh

    2014-12-01

    We are reporting the growth and structural, optical, and dielectric properties of Tb{sub 2}O{sub 3}, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb{sub 2}O{sub 3} thin-films on four different substrates: Si(100), SrTiO{sub 3}(100), LaAlO{sub 3}(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10{sup −1 }Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10{sup −6 }Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb{sub 2}O{sub 3} is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb{sub 2}O{sub 3} films, respectively.

  8. Swelling, NEM, and A23187 activate Cl(-)-dependent K+ transport in high-K+ sheep red cells

    SciTech Connect

    Fujise, H.; Lauf, P.K.

    1987-02-01

    In low K+ (LK) sheep red cells a significant fraction of the total ouabain-resistant (OR) K+ flux is inhibited when Cl- is replaced by other anions of the Hofmeister series except Br- (Cl(-)-dependent K+ flux). In contrast, high K+ (HK) sheep red cells in isosmotic media did not possess any significant OR Cl(-)-dependent K+ flux when Cl- was replaced by NO/sub 3/- or I-. However, exposure to hyposmotic solutions, treatment with the sulfhydryl (SH) group reagent N-ethylmaleimide (NEM) or with the bivalent metal ion (Me2+) ionophore A23187 in absence of external Me2+ caused a significant activation of Cl(-)-dependent K+ transport as measured with Rb+ as K+ congener. There was no Cl(-)-dependent Rb+ flux in A23187-treated cells when Mn2+, Mg2+, and Ca2+ were present at 1 mM concentrations, suggesting that cellular accumulation of these Me2+ is inhibitory. Similar to LK red cells, HK red cells failed to respond to A23187 when pretreated with NEM supporting the hypothesis proposed recently of a common mechanism of Cl(-)-dependent K+ transport activation. The magnitudes of the Cl(-)-dependent Rb+ fluxes in HK cells were much smaller than those elicited by identical treatments in LK red cells, and the effect of all interventions was not due to the presence of reticulocytes known to possess Cl(-)-dependent K+ transport.

  9. 105. DAM TAINTER GATE SUBMERGIBLE SECTION & ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    105. DAM - TAINTER GATE - SUBMERGIBLE - SECTION & ELEVATION (ML-8-48/8-FS) June 1935 - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  10. 103. DAM TAINTER GATE NONSUBMERGIBLE SECTION & ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    103. DAM - TAINTER GATE - NON-SUBMERGIBLE - SECTION & ELEVATION (ML-8-48/1-FS) June 1935 - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  11. 102. DAM TAINTER GATE SUBMERGIBLE DESIGN DATA ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    102. DAM - TAINTER GATE - SUBMERGIBLE - DESIGN DATA - CHANNEL RIBS (ML-8-48/C-FS) June 1935 - Upper Mississippi River 9-Foot Channel, Lock & Dam No. 8, On Mississippi River near Houston County, MN, Genoa, Vernon County, WI

  12. Synthesizing Biomolecule-based Boolean Logic Gates

    PubMed Central

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2012-01-01

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

  13. Mechanical gating of a mechanochemical reaction cascade

    PubMed Central

    Wang, Junpeng; Kouznetsova, Tatiana B.; Boulatov, Roman; Craig, Stephen L.

    2016-01-01

    Covalent polymer mechanochemistry offers promising opportunities for the control and engineering of reactivity. To date, covalent mechanochemistry has largely been limited to individual reactions, but it also presents potential for intricate reaction systems and feedback loops. Here we report a molecular architecture, in which a cyclobutane mechanophore functions as a gate to regulate the activation of a second mechanophore, dichlorocyclopropane, resulting in a mechanochemical cascade reaction. Single-molecule force spectroscopy, pulsed ultrasonication experiments and DFT-level calculations support gating and indicate that extra force of >0.5 nN needs to be applied to a polymer of gated gDCC than of free gDCC for the mechanochemical isomerization gDCC to proceed at equal rate. The gating concept provides a mechanism by which to regulate stress-responsive behaviours, such as load-strengthening and mechanochromism, in future materials designs. PMID:27848956

  14. Time-gated optical projection tomography.

    PubMed

    Bassi, Andrea; Brida, Daniele; D'Andrea, Cosimo; Valentini, Gianluca; Cubeddu, Rinaldo; De Silvestri, Sandro; Cerullo, Giulio

    2010-08-15

    We present an imaging technique that combines optical projection tomography with ballistic imaging using ultrafast time gating. The method provides high-resolution reconstruction of scattering samples and is suitable for three-dimensional (3D) imaging of biological models.

  15. Silicon-gate CMOS/SOS processing

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.

    1979-01-01

    Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discussed, as well as the following process variations: (1) the double epi process; and (2) ion implantation.

  16. Active gated imaging in driver assistance system

    NASA Astrophysics Data System (ADS)

    Grauer, Yoav

    2014-04-01

    In this paper, we shall present the active gated imaging system (AGIS) in relation to the automotive field. AGIS is based on a fast-gated camera and pulsed illuminator, synchronized in the time domain to record images of a certain range of interest. A dedicated gated CMOS imager sensor and near infra-red (NIR) pulsed laser illuminator, is presented in this paper to provide active gated technology. In recent years, we have developed these key components and learned the system parameters, which are most beneficial to nighttime (in all weather conditions) driving in terms of field of view, illumination profile, resolution, and processing power. We shall present our approach of a camera-based advanced driver assistance systems (ADAS) named BrightEye™, which makes use of the AGIS technology in the automotive field.

  17. Current profiles in gated graphene ribbons

    NASA Astrophysics Data System (ADS)

    Cresti, Alessandro; Grosso, Giuseppe; Pastori Parravicini, Giuseppe

    2008-03-01

    We simulate stationary current distribution in graphene ribbons in the presence of top gate potentials, by means of the nonequilibrium Keldysh-Green's function formalism within a tight-binding model. In the absence of magnetic fields and in the presence of a model potential barrier, we observe the Klein paradox, where electrons turn into holes in the gated region and again into electrons beyond it. We establish a connection between the band structure at the corner points of the Brillouin zone and Klein paradox, and give a pictorial description of conductive channels. In the presence of high magnetic fields, transport currents are chiral and flow along the edges of the ribbon. The intensity and sign of the potential barrier with respect to the Fermi energy influence the nature (electron/hole) of the carriers inside the gated region and determine the edge involved in the transport process. We demonstrate that manipulation of currents in the ribbon can be obtained by external gates.

  18. Digital gate pulse generator for cycloconverter control

    DOEpatents

    Klein, Frederick F.; Mutone, Gioacchino A.

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  19. Greening the Golden Gate National Recreation Area

    EPA Pesticide Factsheets

    The Golden Gate National Recreation Area was recognized a 2016 Federal Green Challenge Award for making significant strides to reduce its carbon footprint with the goal of becoming a carbon neutral park.

  20. Optically gated beating-heart imaging

    PubMed Central

    Taylor, Jonathan M.

    2014-01-01

    The constant motion of the beating heart presents an obstacle to clear optical imaging, especially 3D imaging, in small animals where direct optical imaging would otherwise be possible. Gating techniques exploit the periodic motion of the heart to computationally “freeze” this movement and overcome motion artifacts. Optically gated imaging represents a recent development of this, where image analysis is used to synchronize acquisition with the heartbeat in a completely non-invasive manner. This article will explain the concept of optical gating, discuss a range of different implementation strategies and their strengths and weaknesses. Finally we will illustrate the usefulness of the technique by discussing applications where optical gating has facilitated novel biological findings by allowing 3D in vivo imaging of cardiac myocytes in their natural environment of the beating heart. PMID:25566083

  1. Synthesizing biomolecule-based Boolean logic gates.

    PubMed

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2013-02-15

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

  2. Extending Double Optical Gating to the Midinfrared

    NASA Astrophysics Data System (ADS)

    Gorman, Timothy; Camper, Antoine; Agostini, Pierre; Dimauro, Louis

    2015-05-01

    In the past decade there has been great interest in creating broadband isolated attosecond pulses (IAPs). Primarily these IAPs have been generated using Ti:Sapphire 800nm short pulses, namely through spatiotemporal gating with the attosecond lighthouse technique, amplitude gating, polarization gating, and double optical gating (DOG). Here we present theoretical calculations and experimental investigations into extending DOG to using a 2 μm driving wavelength, the benefits of which include extended harmonic cutoff and longer input driving pulse durations. It is proposed that broadband IAPs with cutoffs extending up to 250 eV can be generated in Argon by using >30 fs pulses from the passively-CEP stabilized 2 μm idler out of an optical parametric amplifier combined with a collinear DOG experimental setup.

  3. Mechanical gating of a mechanochemical reaction cascade

    NASA Astrophysics Data System (ADS)

    Wang, Junpeng; Kouznetsova, Tatiana B.; Boulatov, Roman; Craig, Stephen L.

    2016-11-01

    Covalent polymer mechanochemistry offers promising opportunities for the control and engineering of reactivity. To date, covalent mechanochemistry has largely been limited to individual reactions, but it also presents potential for intricate reaction systems and feedback loops. Here we report a molecular architecture, in which a cyclobutane mechanophore functions as a gate to regulate the activation of a second mechanophore, dichlorocyclopropane, resulting in a mechanochemical cascade reaction. Single-molecule force spectroscopy, pulsed ultrasonication experiments and DFT-level calculations support gating and indicate that extra force of >0.5 nN needs to be applied to a polymer of gated gDCC than of free gDCC for the mechanochemical isomerization gDCC to proceed at equal rate. The gating concept provides a mechanism by which to regulate stress-responsive behaviours, such as load-strengthening and mechanochromism, in future materials designs.

  4. Funding announcements from federal government, Gates Foundation.

    PubMed

    Garmaise, David

    2007-05-01

    In two separate announcements, in December 2006 and February 2007, the federal government allocated new funding for HIV/AIDS. The latter announcement was accompanied by a pledge from the Gates Foundation.

  5. Integrated photonic quantum gates for polarization qubits

    PubMed Central

    Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto; Sansoni, Linda; Bongioanni, Irene; Sciarrino, Fabio; Vallone, Giuseppe; Mataloni, Paolo

    2011-01-01

    The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography. PMID:22127062

  6. Smart gating membranes with in situ self-assembled responsive nanogels as functional gates

    PubMed Central

    Luo, Feng; Xie, Rui; Liu, Zhuang; Ju, Xiao-Jie; Wang, Wei; Lin, Shuo; Chu, Liang-Yin

    2015-01-01

    Smart gating membranes, inspired by the gating function of ion channels across cell membranes, are artificial membranes composed of non-responsive porous membrane substrates and responsive gates in the membrane pores that are able to dramatically regulate the trans-membrane transport of substances in response to environmental stimuli. Easy fabrication, high flux, significant response and strong mechanical strength are critical for the versatility of such smart gating membranes. Here we show a novel and simple strategy for one-step fabrication of smart gating membranes with three-dimensionally interconnected networks of functional gates, by self-assembling responsive nanogels on membrane pore surfaces in situ during a vapor-induced phase separation process for membrane formation. The smart gating membranes with in situ self-assembled responsive nanogels as functional gates show large flux, significant response and excellent mechanical property simultaneously. Because of the easy fabrication method as well as the concurrent enhancement of flux, response and mechanical property, the proposed smart gating membranes will expand the scope of membrane applications, and provide ever better performances in their applications. PMID:26434387

  7. Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions

    NASA Astrophysics Data System (ADS)

    Silvestri, Marco; Gerardin, Simone; Paccagnella, Alessandro; Ghidini, Gabriella

    2009-08-01

    We investigated the combined effect of heavy-ion irradiation and large applied bias on the dielectric breakdown of ultra-thin gate oxides, analyzing the impact of border regions through dedicated test structures. We found that the irradiation bias polarity plays a fundamental role, with inversion being more detrimental than accumulation for the onset of gate rupture. Moreover, the average voltage to breakdown was, under certain conditions, lower in structures more closely resembling real MOSFETs, as compared to those commonly used for the evaluation of Single Event Gate Rupture. These findings raise some important hardness assurance issues concerning the integrity of gate oxides in radiation environments.

  8. The effect of pregabalin on sensorimotor gating in 'low' gating humans and mice.

    PubMed

    Acheson, Dean T; Stein, Murray B; Paulus, Martin P; Geyer, Mark A; Risbrough, Victoria B

    2012-09-01

    Pregabalin, an anticonvulsant and anxiolytic compound that binds to α2-δ auxiliary subunit Types 1 and 2 of voltage-gated calcium channels, has been shown to reduce excitatory neurotransmission partially through modulation of glutamatergic signaling. Prepulse inhibition (PPI) of startle is an operational measure of sensorimotor gating impacted by disruption of the glutamatergic system and is reduced in schizophrenia patients. Dysregulation of the glutamatergic system has also been implicated in the pathophysiology of schizophrenia. Here we tested the hypothesis that pregabalin may ameliorate PPI in a model of deficient gating in humans and mice. In study 1, 14 healthy human subjects participated in a within subjects, cross-over study with placebo, 50 mg or 200 mg pregabalin treatment prior to undergoing a PPI task. In study 2, 24 C57BL/6 mice underwent a similar procedure with vehicle, 30 and 100 mg/kg dose treatments. In both studies, subjects were assigned to a "Low" or "High" gating group using a median split procedure based on their PPI performance during placebo/vehicle. Drug effects were then examined across these groups. In humans, pregabalin treatment significantly increased PPI performance in the "low gating" group. In mice, pregabalin treatment significantly increased PPI in the low gating group but reduced PPI in the high gating group. Across species, pregabalin treatment improves PPI in subjects with low gating. These data support further exploration of pregabalin as a potential treatment for disorders characterized by sensorimotor gating deficits and glutamatergic hypersignaling, such as schizophrenia.

  9. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

    PubMed

    Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

    2017-03-06

    Large conductance Ca(2+)-activated K(+) channels (BK channels) gate open in response to both membrane voltage and intracellular Ca(2+) The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca(2+) sensor. How these voltage and Ca(2+) sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca(2+) activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca(2+) sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits.

  10. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  11. Dual-Gated Volumetric Modulated Arc Therapy.

    PubMed

    Fahimian, Benjamin; Wu, Junqing; Wu, Huanmei; Geneser, Sarah; Xing, Lei

    2014-09-25

    Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging radiation therapy modality for treatment of tumors affected by respiratory motion. However, gating significantly prolongs the treatment time, as delivery is only activated during a single respiratory phase. To enhance the efficiency of gated VMAT delivery, a novel dual-gated VMAT (DG-VMAT) technique, in which delivery is executed at both exhale and inhale phases in a given arc rotation, is developed and experimentally evaluated. Arc delivery at two phases is realized by sequentially interleaving control points consisting of MUs, MLC sequences, and angles of VMAT plans generated at the exhale and inhale phases. Dual-gated delivery is initiated when a respiration gating signal enters the exhale window; when the exhale delivery concludes, the beam turns off and the gantry rolls back to the starting position for the inhale window. The process is then repeated until both inhale and exhale arcs are fully delivered. DG-VMAT plan delivery accuracy was assessed using a pinpoint chamber and diode array phantom undergoing programmed motion. DG-VMAT delivery was experimentally implemented through custom XML scripting in Varian's TrueBeam™ STx Developer Mode. Relative to single gated delivery at exhale, the treatment time was improved by 95.5% for a sinusoidal breathing pattern. The pinpoint chamber dose measurement agreed with the calculated dose within 0.7%. For the DG-VMAT delivery, 97.5% of the diode array measurements passed the 3%/3 mm gamma criterion. The feasibility of DG-VMAT delivery scheme has been experimentally demonstrated for the first time. By leveraging the stability and natural pauses that occur at end-inspiration and end-exhalation, DG-VMAT provides a practical method for enhancing gated delivery efficiency by up to a factor of two.

  12. Multipulse interferometric frequency-resolved optical gating

    SciTech Connect

    Siders, C.W.; Siders, J.L.W.; Omenetto, F.G.; Taylor, A.J.

    1999-04-01

    The authors review multipulse interferometric frequency-resolved optical gating (MI-FROG) as a technique, uniquely suited for pump-probe coherent spectroscopy using amplified visible and near-infrared short-pulse systems and/or emissive targets, for time-resolving ultrafast phase shifts and intensity changes. Application of polarization-gate MI-FROG to the study of ultrafast ionization in gases is presented.

  13. Fast phase gates with trapped ions

    NASA Astrophysics Data System (ADS)

    Palmero, M.; Martínez-Garaot, S.; Leibfried, D.; Wineland, D. J.; Muga, J. G.

    2017-02-01

    We implement faster-than-adiabatic two-qubit phase gates using smooth state-dependent forces. The forces are designed to leave no final motional excitation, independently of the initial motional state in the harmonic small-oscillations limit. They are simple, explicit functions of time and the desired logical phase of the gate, and are based on quadratic invariants of motion and Lewis-Riesenfeld phases of the normal modes.

  14. Deterministic linear optical quantum Toffoli gate

    NASA Astrophysics Data System (ADS)

    Huang, He-Liang; Bao, Wan-Su; Li, Tan; Li, Feng-Guang; Fu, Xiang-Qun; Zhang, Shuo; Zhang, Hai-Long; Wang, Xiang

    2017-09-01

    Quantum Toffoli gate is a crucial part of many quantum information processing schemes. We design a deterministic linear optical quantum Toffoli gate using three degrees of freedom of a single photon. The proposed setup does not require any ancilla photons and is experimentally feasible with current technology. Moreover, we show that our setup can be directly used to demonstrate that hypergraph states violate local realism in an extreme manner.

  15. Hysteresis in voltage-gated channels.

    PubMed

    Villalba-Galea, Carlos A

    2016-09-30

    Ion channels constitute a superfamily of membrane proteins found in all living creatures. Their activity allows fast translocation of ions across the plasma membrane down the ion's transmembrane electrochemical gradient, resulting in a difference in electrical potential across the plasma membrane, known as the membrane potential. A group within this superfamily, namely voltage-gated channels, displays activity that is sensitive to the membrane potential. The activity of voltage-gated channels is controlled by the membrane potential, while the membrane potential is changed by these channels' activity. This interplay produces variations in the membrane potential that have evolved into electrical signals in many organisms. These signals are essential for numerous biological processes, including neuronal activity, insulin release, muscle contraction, fertilization and many others. In recent years, the activity of the voltage-gated channels has been observed not to follow a simple relationship with the membrane potential. Instead, it has been shown that the activity of voltage-gated channel displays hysteresis. In fact, a growing number of evidence have demonstrated that the voltage dependence of channel activity is dynamically modulated by activity itself. In spite of the great impact that this property can have on electrical signaling, hysteresis in voltage-gated channels is often overlooked. Addressing this issue, this review provides examples of voltage-gated ion channels displaying hysteretic behavior. Further, this review will discuss how Dynamic Voltage Dependence in voltage-gated channels can have a physiological role in electrical signaling. Furthermore, this review will elaborate on the current thoughts on the mechanism underlying hysteresis in voltage-gated channels.

  16. Quantum teleportation of optical quantum gates.

    PubMed

    Bartlett, Stephen D; Munro, William J

    2003-03-21

    We show that a universal set of gates for quantum computation with optics can be quantum teleported through the use of EPR entangled states, homodyne detection, and linear optics and squeezing operations conditioned on measurement outcomes. This scheme may be used for fault-tolerant quantum computation in any optical scheme (qubit or continuous-variable). The teleportation of nondeterministic nonlinear gates employed in linear optics quantum computation is discussed.

  17. Advanced logic gates for ultrafast network interchanges

    NASA Astrophysics Data System (ADS)

    Islam, Mohammed N.

    1995-08-01

    By overcoming speed bottlenecks from electronic switching as well as optical/electronic conversions, all-optical logic gates can permit further exploitation of the nearly 40 THz of bandwidth available from optical fibers. We focus on the use of optical solitons and all-optical logic gates to implement ultrafast ``interchanges'' or switching nodes on packet networks with speeds of 100 Gbit/s or greater. For example, all-optical logic gates have been demonstrated with speeds up to 200 Gbit/s, and they may be used to decide whether to add or drop a data packet. The overall goal of our effort is to demonstrate the key enabling technologies and their combination for header processing in 100 Gbit/s, time-division-multiplexed, packed switched networks. Soliton-based fiber logic gates are studied with the goal of combining attractive features of soliton-dragging logic gates, nonlinear loop mirrors, and erbium-doped fiber amplifiers to design logic gates with optimum switching energy, contrast ratio, and timing sensitivity. First, the experimental and numerical work studies low-latency soliton logic gates based on frequency shifts associated with cross-phase modulation. In preliminary experiments, switching in 15 m long low-birefringent fibers has been demonstrated with a contrast ratio of 2.73:1. Using dispersion-shifted fiber in the gate should lower the switching energy and improve the contrast ratio. Next, the low-birefringent fiber can be cross-spliced and wrapped into a nonlinear optical loop mirror to take advantage of mechanisms from both soliton dragging and loop mirrors. The resulting device can have low switching energy and a timing window that results from a combination of soliton dragging and the loop mirror mechanisms.

  18. Modulation of CFTR gating by permeant ions

    PubMed Central

    Yeh, Han-I; Yeh, Jiunn-Tyng

    2015-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR) is unique among ion channels in that after its phosphorylation by protein kinase A (PKA), its ATP-dependent gating violates microscopic reversibility caused by the intimate involvement of ATP hydrolysis in controlling channel closure. Recent studies suggest a gating model featuring an energetic coupling between opening and closing of the gate in CFTR’s transmembrane domains and association and dissociation of its two nucleotide-binding domains (NBDs). We found that permeant ions such as nitrate can increase the open probability (Po) of wild-type (WT) CFTR by increasing the opening rate and decreasing the closing rate. Nearly identical effects were seen with a construct in which activity does not require phosphorylation of the regulatory domain, indicating that nitrate primarily affects ATP-dependent gating steps rather than PKA-dependent phosphorylation. Surprisingly, the effects of nitrate on CFTR gating are remarkably similar to those of VX-770 (N-(2,4-Di-tert-butyl-5-hydroxyphenyl)-4-oxo-1,4-dihydroquinoline-3-carboxamide), a potent CFTR potentiator used in clinics. These include effects on single-channel kinetics of WT CFTR, deceleration of the nonhydrolytic closing rate, and potentiation of the Po of the disease-associated mutant G551D. In addition, both VX-770 and nitrate increased the activity of a CFTR construct lacking NBD2 (ΔNBD2), indicating that these gating effects are independent of NBD dimerization. Nonetheless, whereas VX-770 is equally effective when applied from either side of the membrane, nitrate potentiates gating mainly from the cytoplasmic side, implicating a common mechanism for gating modulation mediated through two separate sites of action. PMID:25512598

  19. Boolean gates on actin filaments

    NASA Astrophysics Data System (ADS)

    Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

    2016-01-01

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications.

  20. Range gated strip proximity sensor

    DOEpatents

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.